National Library of Energy BETA

Sample records for vapor emits ultraviolet

  1. High extraction efficiency ultraviolet light-emitting diode

    DOE Patents [OSTI]

    Wierer, Jonathan; Montano, Ines; Allerman, Andrew A.

    2015-11-24

    Ultraviolet light-emitting diodes with tailored AlGaN quantum wells can achieve high extraction efficiency. For efficient bottom light extraction, parallel polarized light is preferred, because it propagates predominately perpendicular to the QW plane and into the typical and more efficient light escape cones. This is favored over perpendicular polarized light that propagates along the QW plane which requires multiple, lossy bounces before extraction. The thickness and carrier density of AlGaN QW layers have a strong influence on the valence subband structure, and the resulting optical polarization and light extraction of ultraviolet light-emitting diodes. At Al>0.3, thinner QW layers (<2.5 nm are preferred) result in light preferentially polarized parallel to the QW plane. Also, active regions consisting of six or more QWs, to reduce carrier density, and with thin barriers, to efficiently inject carriers in all the QWs, are preferred.

  2. Tunnel junction enhanced nanowire ultraviolet light emitting diodes

    SciTech Connect (OSTI)

    Sarwar, A. T. M. Golam; May, Brelon J.; Deitz, Julia I.; Grassman, Tyler J.; McComb, David W.; Myers, Roberto C.

    2015-09-07

    Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ∼6 V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The combination of both reduced bias voltage and increased hole injection increases the wall plug efficiency in these devices. More than 100 μW of UV emission at ∼310 nm is measured with external quantum efficiency in the range of 4–6 m%. The realization of tunnel junction within the nanowire LEDs opens a pathway towards the monolithic integration of cascaded multi-junction nanowire LEDs on silicon.

  3. Defect-Enabled Electrical Current Leakage in Ultraviolet Light-Emitting Diodes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; Wierer, Jonathan; Smith, Michael L.; Biedermann, Laura

    2015-04-13

    The AlGaN materials system offers a tunable, ultra-wide bandgap that is exceptionally useful for high-power electronics and deep ultraviolet optoelectronics. Moseley et al. (pp. 723–726) investigate a structural defect known as an open-core threading dislocation or ''nanopipe'' that is particularly detrimental to devices that employ these materials. Furthermore, an AlGaN thin film was synthesized using metal-organic chemical-vapor deposition. Electrical current leakage is detected at a discrete point using a conductive atomic-force microscope (CAFM). However, no physical feature or abnormality at this location was visible by an optical microscope. The AlGaN thin film was then etched in hot phosphoric acid, andmore » the same location that was previously analyzed was revisited with the CAFM. The point that previously exhibited electrical current leakage had been decorated with a 1.1 μm wide hexagonal pit, which identified the site of electrical current leakage as a nanopipe and allows these defects to be easily observed by optical microscopy. Moreover, with this nanopipe identification and quantification strategy, the authors were able to correlate decreasing ultraviolet light-emitting diode optical output power with increasing nanopipe density.« less

  4. Photon extraction from nitride ultraviolet light-emitting devices

    DOE Patents [OSTI]

    Schowalter, Leo J; Chen, Jianfeng; Grandusky, James R

    2015-02-24

    In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

  5. Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

    SciTech Connect (OSTI)

    Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep

    2013-01-28

    We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.

  6. Nanostructured High Performance Ultraviolet and Blue Light Emitting Diodes for Solid State Lighting

    SciTech Connect (OSTI)

    Arto V. Nurmikko; Jung Han

    2005-09-30

    We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications. Accomplishments in the second 12 month contract period include (i) new means of synthesizing AlGaN and InN quantum dots by droplet heteroepitaxy, (ii) synthesis of AlGaInN nanowires as building blocks for GaN-based microcavity devices, (iii) progress towards direct epitaxial alignment of the dense arrays of nanowires, (iv) observation and measurements of stimulated emission in dense InGaN nanopost arrays, (v) design and fabrication of InGaN photonic crystal emitters, and (vi) observation and measurements of enhanced fluorescence from coupled quantum dot and plasmonic nanostructures. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

  7. NANOSTRUCTURED HIGH PERFORMANCE ULTRAVIOLET AND BLUE LIGHT EMITTING DIODES FOR SOLID STATE LIGHTING

    SciTech Connect (OSTI)

    Arto V. Nurmikko; Jung Han

    2004-10-01

    We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications. Accomplishments in the first 12 month contract period include (1) new means of synthesizing zero- and one-dimensional GaN nanostructures, (2) establishment of the building blocks for making GaN-based microcavity devices, and (3) demonstration of top-down approach to nano-scale photonic devices for enhanced spontaneous emission and light extraction. These include a demonstration of eight-fold enhancement of the external emission efficiency in new InGaN QW photonic crystal structures. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

  8. Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED)

    SciTech Connect (OSTI)

    Kurose, N. Aoyagi, Y.; Shibano, K.; Araki, T.

    2014-02-15

    A vertical ultraviolet (UV) light-emitting diode (LED) that does not require substrate removal is developed. Spontaneous via holes are formed in n-AlN layer epitaxially grown on a high conductive n+Si substrate and the injected current flows directly from the p-electrode to high doped n{sup +} Si substrate through p-AlGaN, multi-quantum wells, n-AlGaN and spontaneous via holes in n-AlN. The spontaneous via holes were formed by controlling feeding-sequence of metal-organic gas sources and NH{sub 3} and growth temperature in MOCVD. The via holes make insulating n-AlN to be conductive. We measured the current-voltage, current-light intensity and emission characteristics of this device. It exhibited a built-in voltage of 3.8 V and emission was stated at 350 nm from quantum wells with successive emission centered at 400 nm. This UV LED can be produced, including formation of n and p electrodes, without any resist process.

  9. Growth of vertical-cavity surface emitting lasers by metalorganic vapor phase epitaxy

    SciTech Connect (OSTI)

    Hou, H.Q.; Hammons, B.E.; Crawford, M.H.; Lear, K.L.; Choquette, K.D.

    1996-10-01

    We present growth and characterization of visible and near-infrared vertical-cavity surface emitting lasers (VCSELs) grown by metalorganic vapor phase epitaxy. Discussions on the growth issue of VCSEL materials include growth rate and composition control using an {ital in}{ital situ} normal-incidence reflectometer, comprehensive p- and n-type doping study in AlGaAs by CCl{sub 4} and Si{sub 2}H{sub 6} over the entire composition range, and optimization of ultra-high material uniformity. We also demonstrate our recent achievements of all-AlGaAs VCSELs which include the first room-temperature continuous- wave demonstration of 700-nm red VCSELs and high-efficiency and low- threshold voltage 850-nm VCSELs.

  10. Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode

    SciTech Connect (OSTI)

    Kang, Jang-Won; Choi, Yong-Seok; Goo Kang, Chang; Hun Lee, Byoung [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Kim, Byeong-Hyeok [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407 (United States); Park, Seong-Ju, E-mail: sjpark@gist.ac.kr [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

    2014-02-03

    We report on ultraviolet emission from a multi-layer graphene (MLG)/MgZnO/ZnO light-emitting diodes (LED). The p-type MLG and MgZnO in the MLG/MgZnO/ZnO LED are used as transparent hole injection and electron blocking layers, respectively. The current-voltage characteristics of the MLG/MgZnO/ZnO LED show that current transport is dominated by tunneling processes in the MgZnO barrier layer under forward bias conditions. The holes injected from p-type MLG recombine efficiently with the electrons accumulated in ZnO, and the MLG/MgZnO/ZnO LED shows strong ultraviolet emission from the band edge of ZnO and weak red-orange emission from the deep levels of ZnO.

  11. New red phosphor for near-ultraviolet light-emitting diodes with high color-purity

    SciTech Connect (OSTI)

    Wang, Zhengliang; He, Pei; Wang, Rui; Zhao, Jishou; Gong, Menglian

    2010-02-15

    New red phosphors, Na{sub 5}Eu(MoO{sub 4}){sub 4} doped with boron oxide were prepared by the solid-state reaction. Their structure and photo-luminescent properties were investigated. With the introduction of boron oxide, the red emission intensity of the phosphors under 395 nm excitation is strengthened, with high color-purity (x = 0.673, y = 0.327). The single red light-emitting diode was obtained by combining InGaN chip with the red phosphor, bright red light can be observed by naked eyes from the red light-emitting diodes under a forward bias of 20 mA.

  12. High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

    SciTech Connect (OSTI)

    Wu, Y.; Li, X.; Xu, P.; Wang, Y.; Shen, X.; Liu, X.; Yang, Q.; Hasan, T.

    2015-02-02

    We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5?nm. The dominant emission, detectable at ultralow (<1??A) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25??A current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter?

  13. Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes

    SciTech Connect (OSTI)

    Reich, Christoph Guttmann, Martin; Wernicke, Tim; Mehnke, Frank; Kuhn, Christian; Feneberg, Martin; Goldhahn, Rüdiger; Rass, Jens; Kneissl, Michael; Lapeyrade, Mickael; Einfeldt, Sven; Knauer, Arne; Kueller, Viola; Weyers, Markus

    2015-10-05

    The optical polarization of emission from ultraviolet (UV) light emitting diodes (LEDs) based on (0001)-oriented Al{sub x}Ga{sub 1−x}N multiple quantum wells (MQWs) has been studied by simulations and electroluminescence measurements. With increasing aluminum mole fraction in the quantum well x, the in-plane intensity of transverse-electric (TE) polarized light decreases relative to that of the transverse-magnetic polarized light, attributed to a reordering of the valence bands in Al{sub x}Ga{sub 1−x}N. Using k ⋅ p theoretical model calculations, the AlGaN MQW active region design has been optimized, yielding increased TE polarization and thus higher extraction efficiency for bottom-emitting LEDs in the deep UV spectral range. Using (i) narrow quantum wells, (ii) barriers with high aluminum mole fractions, and (iii) compressive growth on patterned aluminum nitride sapphire templates, strongly TE-polarized emission was observed at wavelengths as short as 239 nm.

  14. Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Miller, Mary A.; Tangyunyong, Paiboon; Edward I. Cole, Jr.

    2016-01-12

    In this study, laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes(LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increasedmore » leakage is not present in devices without AVM signals. Transmission electron microscopyanalysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)].« less

  15. Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

    SciTech Connect (OSTI)

    Verma, Jai Islam, S. M.; Protasenko, Vladimir; Kumar Kandaswamy, Prem; Xing, Huili; Jena, Debdeep

    2014-01-13

    Efficient semiconductor optical emitters in the deep-ultraviolet spectral window are encountering some of the most deep rooted problems of semiconductor physics. In III-Nitride heterostructures, obtaining short-wavelength photon emission requires the use of wide bandgap high Al composition AlGaN active regions. High conductivity electron (n-) and hole (p-) injection layers of even higher bandgaps are necessary for electrical carrier injection. This approach requires the activation of very deep dopants in very wide bandgap semiconductors, which is a difficult task. In this work, an approach is proposed and experimentally demonstrated to counter the challenges. The active region of the heterostructure light emitting diode uses ultrasmall epitaxially grown GaN quantum dots. Remarkably, the optical emission energy from GaN is pushed from 365?nm (3.4?eV, the bulk bandgap) to below 240?nm (>5.2?eV) because of extreme quantum confinement in the dots. This is possible because of the peculiar bandstructure and band alignments in the GaN/AlN system. This active region design crucially enables two further innovations for efficient carrier injection: Tunnel injection of carriers and polarization-induced p-type doping. The combination of these three advances results in major boosts in electroluminescence in deep-ultraviolet light emitting diodes and lays the groundwork for electrically pumped short-wavelength lasers.

  16. Luminescent properties of Eu{sup 2+}-doped BaGdF{sub 5} glass ceramics a potential blue phosphor for ultra-violet light-emitting diode

    SciTech Connect (OSTI)

    Zhang, Weihuan; Zhang, Yuepin Ouyang, Shaoye; Zhang, Zhixiong; Wang, Qian; Xia, Haiping

    2015-01-14

    Eu{sup 2+} doped transparent oxyfluoride glass ceramics containing BaGdF{sub 5} nanocrystals were successfully fabricated by melt-quenching technique under a reductive atmosphere. The structure of the glass and glass ceramics were investigated by differential scanning calorimetry, X-ray diffraction (XRD), and transmission electron microscopy (TEM). The luminescent properties were investigated by transmission, excitation, and emission spectra. The decay time of the Gd{sup 3+} ions at 312?nm excited with 275?nm were also investigated. The results of XRD and TEM indicated the existence of BaGdF5 nanocrystals in the transparent glass ceramics. The excitation spectra of Eu{sup 2+} doped glass ceramics showed an excellent overlap with the main emission region of an ultraviolet light-emitting diode (UV-LED). Compared with the as-made glass, the emission of glass ceramics is much stronger by a factor of increasing energy transfer efficiency from Gd{sup 3+} to Eu{sup 2+} ions, the energy transfer efficiency from Gd{sup 3+} to Eu{sup 2+} ions was discussed. In addition, the chromaticity coordinates of glass and glass ceramics specimens were also discussed, which indicated that the Eu{sup 2+} doped BaGdF{sub 5} glass ceramics may be used as a potential blue-emitting phosphor for UV-LED.

  17. Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (2021) substrates

    SciTech Connect (OSTI)

    Sawicka, M.; Grzanka, S.; Skierbiszewski, C.; Turski, H.; Muziol, G.; Krysko, M.; Grzanka, E.; Sochacki, T.; Siekacz, M.; Kucharski, R.

    2013-03-18

    Multi-quantum well (MQW) structures and light emitting diodes (LEDs) were grown on semipolar (2021) and polar (0001) GaN substrates by plasma-assisted molecular beam epitaxy. The In incorporation efficiency was found to be significantly lower for the semipolar plane as compared to the polar one. The semipolar MQWs exhibit a smooth surface morphology, abrupt interfaces, and a high photoluminescence intensity. The electroluminescence of semipolar (2021) and polar (0001) LEDs fabricated in the same growth run peaks at 387 and 462 nm, respectively. Semipolar LEDs with additional (Al,Ga)N cladding layers exhibit a higher optical output power but simultaneously a higher turn-on voltage.

  18. Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes

    SciTech Connect (OSTI)

    Moseley, Michael Allerman, Andrew; Crawford, Mary; Wierer, Jonathan J.; Smith, Michael; Biedermann, Laura

    2014-08-07

    Electrical current transport through leakage paths in AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) and their effect on LED performance are investigated. Open-core threading dislocations, or nanopipes, are found to conduct current through nominally insulating Al{sub 0.7}Ga{sub 0.3}N layers and limit the performance of DUV-LEDs. A defect-sensitive phosphoric acid etch reveals these open-core threading dislocations in the form of large, micron-scale hexagonal etch pits visible with optical microscopy, while closed-core screw-, edge-, and mixed-type threading dislocations are represented by smaller and more numerous nanometer-scale pits visible by atomic-force microscopy. The electrical and optical performances of DUV-LEDs fabricated on similar Si-doped Al{sub 0.7}Ga{sub 0.3}N templates are found to have a strong correlation to the density of these nanopipes, despite their small fraction (<0.1% in this study) of the total density of threading dislocations.

  19. Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

    SciTech Connect (OSTI)

    Hosalli, A. M.; Van Den Broeck, D. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)

    2013-12-02

    We demonstrate a metalorganic chemical vapor deposition growth approach for inverting N-polar to Ga-polar GaN by using a thin inversion layer grown with high Mg flux. The introduction of this inversion layer allowed us to grow p-GaN films on N-polar GaN thin film. We have studied the dependence of hole concentration, surface morphology, and degree of polarity inversion for the inverted Ga-polar surface on the thickness of the inversion layer. We then use this approach to grow a light emitting diode structure which has the MQW active region grown on the advantageous N-polar surface and the p-layer grown on the inverted Ga-polar surface.

  20. KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

    SciTech Connect (OSTI)

    Guo, W; Kirste, R; Bryan, I; Bryan, Z; Hussey, L; Reddy, P; Tweedie, J; Collazo, R; Sitar, Z

    2015-02-23

    A controllable and smooth potassium hydroxide-based wet etching technique was developed for the AlGaN system. High selectivity between AlN and AlxGa1-xN (up to 12 x) was found to be critical in achieving effective substrate thinning or removal for AlGaN-based deep ultraviolet light emitting diodes, thus increasing light extraction efficiency. The mechanism of high selectivity of AlGaN as a function of Al composition can be explained as related to the formation and dissolution of oxide/hydroxide on top of N-polar surface. Cross-sectional transmission electron microscopic analysis served as ultimate proof that these hillocks were not related to underlying threading dislocations. (C) 2015 AIP Publishing LLC.

  1. Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes

    SciTech Connect (OSTI)

    Al tahtamouni, T. M.; Lin, J. Y.; Jiang, H. X.

    2014-04-15

    Mg-doped AlN/AlGaN superlattice (Mg-SL) and Mg-doped AlGaN epilayers have been investigated in the 284 nm deep ultraviolet (DUV) light emitting diodes (LEDs) as electron blocking layers. It was found that the use of Mg-SL improved the material quality of the p-GaN contact layer, as evidenced in the decreased density of surface pits and improved surface morphology and crystalline quality. The performance of the DUV LEDs fabricated using Mg-SL was significantly improved, as manifested by enhanced light intensity and output power, and reduced turn-on voltage. The improved performance is attributed to the enhanced blocking of electron overflow, and enhanced hole injection.

  2. Liquid-phase exfoliation of chemical vapor deposition-grown single layer graphene and its application in solution-processed transparent electrodes for flexible organic light-emitting devices

    SciTech Connect (OSTI)

    Wu, Chaoxing; Li, Fushan E-mail: gtl-fzu@hotmail.com; Wu, Wei; Chen, Wei; Guo, Tailiang E-mail: gtl-fzu@hotmail.com

    2014-12-15

    Efficient and low-cost methods for obtaining high performance flexible transparent electrodes based on chemical vapor deposition (CVD)-grown graphene are highly desirable. In this work, the graphene grown on copper foil was exfoliated into micron-size sheets through controllable ultrasonication. We developed a clean technique by blending the exfoliated single layer graphene sheets with conducting polymer to form graphene-based composite solution, which can be spin-coated on flexible substrate, forming flexible transparent conducting film with high conductivity (?8 ?/?), high transmittance (?81% at 550?nm), and excellent mechanical robustness. In addition, CVD-grown-graphene-based polymer light emitting diodes with excellent bendable performances were demonstrated.

  3. Electrical Current Leakage and Open-Core Threading Dislocations in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; Wierer, Jonathan; Smith, Michael L.; Biedermann, Laura

    2014-08-04

    Electrical current transport through leakage paths in AlGaN-based deep ultraviolet (DUV) lightemitting diodes (LEDs) and their effect on LED performance are investigated. Open-core threading dislocations, or nanopipes, are found to conduct current through nominally insulating Al0.7Ga0.3N layers and limit the performance of DUV-LEDs. A defect-sensitive phosphoric acid etch reveals these opencore threading dislocations in the form of large, micron-scale hexagonal etch pits visible with optical microscopy, while closed-core screw-, edge-, and mixed-type threading dislocations are represented by smaller and more numerous nanometer-scale pits visible by atomic-force microscopy. The electrical and optical performances of DUV-LEDs fabricated on similar Si-doped Al0.7Ga0.3N templatesmore » are found to have a strong correlation to the density of these nanopipes, despite their small fraction (<0.1% in this study) of the total density of threading dislocations.« less

  4. Photopumped red-emitting InP/In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition

    SciTech Connect (OSTI)

    Ryou, J. H.; Dupuis, R. D.; Walter, G.; Kellogg, D. A.; Holonyak, N.; Mathes, D. T.; Hull, R.; Reddy, C. V.; Narayanamurti, V.

    2001-06-25

    We report the 300 K operation of optically pumped red-emitting lasers fabricated from InP self-assembled quantum dots embedded in In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P layers on GaAs (100) substrates grown by metalorganic chemical vapor deposition. Quantum dots grown at 650{degree}C on In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P layers have a high density on the order of 10{sup 10} cm{sup {minus}2} and the dominant size of individual quantum dots ranges from {similar_to}5 to {similar_to}10 nm for 7.5 monolayer {open_quotes}equivalent growth.{close_quotes} These InP/In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P quantum dot heterostructures are characterized by atomic force microscopy, high-resolution transmission electron microscopy, and photoluminescence. Laser structures are prepared from wafers having two vertically stacked InP quantum dot active layers within a 100-nm-thick In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P waveguide and upper and lower 600 nm InAlP cladding layers. We observe lasing at {lambda}{similar_to}680 nm at room temperature in optically pumped samples. {copyright} 2001 American Institute of Physics.

  5. The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

    SciTech Connect (OSTI)

    Gaddy, BE; Bryan, Z; Bryan, I; Xie, JQ; Dalmau, R; Moody, B; Kumagai, Y; Nagashima, T; Kubota, Y; Kinoshita, T; Koukitu, A; Kirste, R; Sitar, Z; Collazo, R; Irving, DL

    2014-05-19

    Co-doping AlN crystals with Si is found to suppress the unwanted 4.7 eV (265 nm) deep ultraviolet absorption associated with isolated carbon acceptors common in materials grown by physical vapor transport. Density functional theory calculations with hybrid functionals demonstrate that silicon forms a stable nearest-neighbor defect complex with carbon. This complex is predicted to absorb at 5.5 eV and emit at or above 4.3 eV. Absorption and photoluminescence measurements of co-doped samples confirm the presence of the predicted C-N-Si-Al complex absorption and emission peaks and significant reduction of the 4.7 eV absorption. Other sources of deep ultraviolet absorption in AlN are also discussed. (C) 2014 AIP Publishing LLC.

  6. Atmospheric Emitted Radiance Interferometer

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Gero, Jonathan; Ermold, Brian; Gaustad, Krista; Koontz, Annette; Hackel, Denny; Garcia, Raymond

    2005-01-01

    The atmospheric emitted radiance interferometer (AERI) is a ground-based instrument that measures the downwelling infrared radiance from the Earth’s atmosphere. The observations have broad spectral content and sufficient spectral resolution to discriminate among gaseous emitters (e.g., carbon dioxide and water vapor) and suspended matter (e.g., aerosols, water droplets, and ice crystals). These upward-looking surface observations can be used to obtain vertical profiles of tropospheric temperature and water vapor, as well as measurements of trace gases (e.g., ozone, carbon monoxide, and methane) and downwelling infrared spectral signatures of clouds and aerosols. The AERI is a passive remote sounding instrument, employing a Fourier transform spectrometer operating in the spectral range 3.3–19.2 μm (520–3020 cm-1) at an unapodized resolution of 0.5 cm-1 (max optical path difference of 1 cm). The extended-range AERI (ER-AERI) deployed in dry climates, like in Alaska, have a spectral range of 3.3–25.0 μm (400–3020 cm-1) that allow measurements in the far-infrared region. Typically, the AERI averages views of the sky over a 16-second interval and operates continuously.

  7. Method for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Felter, T. E. (727 Clara St., Livermore, Alameda County, CA 94550); Kubiak, G. D. (475 Maple St., Livermore, Alameda County, CA 94550)

    2000-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  8. Method for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Felter, T. E.; Kubiak, Glenn D.

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  9. Photoresist composition for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Felter, T. E. (Alameda County, CA); Kubiak, G. D. (Alameda County, CA)

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

  10. Method for generating extreme ultraviolet with mather-type plasma accelerators for use in Extreme Ultraviolet Lithography

    DOE Patents [OSTI]

    Hassanein, Ahmed; Konkashbaev, Isak

    2006-10-03

    A device and method for generating extremely short-wave ultraviolet electromagnetic wave uses two intersecting plasma beams generated by two plasma accelerators. The intersection of the two plasma beams emits electromagnetic radiation and in particular radiation in the extreme ultraviolet wavelength. In the preferred orientation two axially aligned counter streaming plasmas collide to produce an intense source of electromagnetic radiation at the 13.5 nm wavelength. The Mather type plasma accelerators can utilize tin, or lithium covered electrodes. Tin, lithium or xenon can be used as the photon emitting gas source.

  11. light-emitting diode

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Cost The high-brightness, rapidly pulsed, multicolor light-emitting diode (LED) driver delivers lighting performance that exceeds that of conventional (laserarc-light) sources ...

  12. Optical monitor for water vapor concentration

    DOE Patents [OSTI]

    Kebabian, Paul

    1998-01-01

    A system for measuring and monitoring water vapor concentration in a sample uses as a light source an argon discharge lamp, which inherently emits light with a spectral line that is close to a water vapor absorption line. In a preferred embodiment, the argon line is split by a magnetic field parallel to the direction of light propagation from the lamp into sets of components of downshifted and upshifted frequencies of approximately 1575 Gauss. The downshifted components are centered on a water vapor absorption line and are thus readily absorbed by water vapor in the sample; the upshifted components are moved away from that absorption line and are minimally absorbed. A polarization modulator alternately selects the upshifted components or downshifted components and passes the selected components to the sample. After transmission through the sample, the transmitted intensity of a component of the argon line varies as a result of absorption by the water vapor. The system then determines the concentration of water vapor in the sample based on differences in the transmitted intensity between the two sets of components. In alternative embodiments alternate selection of sets of components is achieved by selectively reversing the polarity of the magnetic field or by selectively supplying the magnetic field to the emitting plasma.

  13. Optical monitor for water vapor concentration

    DOE Patents [OSTI]

    Kebabian, P.

    1998-06-02

    A system for measuring and monitoring water vapor concentration in a sample uses as a light source an argon discharge lamp, which inherently emits light with a spectral line that is close to a water vapor absorption line. In a preferred embodiment, the argon line is split by a magnetic field parallel to the direction of light propagation from the lamp into sets of components of downshifted and upshifted frequencies of approximately 1575 Gauss. The downshifted components are centered on a water vapor absorption line and are thus readily absorbed by water vapor in the sample; the upshifted components are moved away from that absorption line and are minimally absorbed. A polarization modulator alternately selects the upshifted components or downshifted components and passes the selected components to the sample. After transmission through the sample, the transmitted intensity of a component of the argon line varies as a result of absorption by the water vapor. The system then determines the concentration of water vapor in the sample based on differences in the transmitted intensity between the two sets of components. In alternative embodiments alternate selection of sets of components is achieved by selectively reversing the polarity of the magnetic field or by selectively supplying the magnetic field to the emitting plasma. 5 figs.

  14. Vapor Barriers or Vapor Diffusion Retarders | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Moisture Control Vapor Barriers or Vapor Diffusion Retarders Vapor Barriers or Vapor ... can be part of an overall moisture control strategy for your home. | Photo courtesy ...

  15. VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY COAL TARS...

    Office of Scientific and Technical Information (OSTI)

    Technical Report: VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY COAL TARS Citation Details In-Document Search Title: VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY ...

  16. Apparatus and method for photochemical vapor deposition

    DOE Patents [OSTI]

    Jackson, Scott C.; Rocheleau, Richard E.

    1987-03-31

    A photochemical vapor deposition apparatus includes a reactor housing having a window in one wall above a reaction chamber in the housing. A transparent curtain divides the reaction chamber into a reaction zone and a flush zone. At least one substrate is mounted in the reaction zone in light communication with the window so that ultraviolet radiation may penetrate through the window into the reaction zone. The window is kept clear by a gas flowing through the flush zone.

  17. Water Vapor Experiment Concludes

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3 Water Vapor Experiment Concludes The AIRS (atmospheric infrared sounder) Water Vapor Experiment - Ground (AWEX-G) intensive operations period (IOP) at the SGP central facility ...

  18. Ultraviolet absorption hygrometer

    DOE Patents [OSTI]

    Gersh, Michael E.; Bien, Fritz; Bernstein, Lawrence S.

    1986-01-01

    An ultraviolet absorption hygrometer is provided including a source of pulsed ultraviolet radiation for providing radiation in a first wavelength region where water absorbs significantly and in a second proximate wavelength region where water absorbs weakly. Ultraviolet radiation in the first and second regions which has been transmitted through a sample path of atmosphere is detected. The intensity of the radiation transmitted in each of the first and second regions is compared and from this comparison the amount of water in the sample path is determined.

  19. Ultraviolet absorption hygrometer

    DOE Patents [OSTI]

    Gersh, M.E.; Bien, F.; Bernstein, L.S.

    1986-12-09

    An ultraviolet absorption hygrometer is provided including a source of pulsed ultraviolet radiation for providing radiation in a first wavelength region where water absorbs significantly and in a second proximate wavelength region where water absorbs weakly. Ultraviolet radiation in the first and second regions which has been transmitted through a sample path of atmosphere is detected. The intensity of the radiation transmitted in each of the first and second regions is compared and from this comparison the amount of water in the sample path is determined. 5 figs.

  20. Calibrated vapor generator source

    DOE Patents [OSTI]

    Davies, John P.; Larson, Ronald A.; Goodrich, Lorenzo D.; Hall, Harold J.; Stoddard, Billy D.; Davis, Sean G.; Kaser, Timothy G.; Conrad, Frank J.

    1995-01-01

    A portable vapor generator is disclosed that can provide a controlled source of chemical vapors, such as, narcotic or explosive vapors. This source can be used to test and calibrate various types of vapor detection systems by providing a known amount of vapors to the system. The vapor generator is calibrated using a reference ion mobility spectrometer. A method of providing this vapor is described, as follows: explosive or narcotic is deposited on quartz wool, placed in a chamber that can be heated or cooled (depending on the vapor pressure of the material) to control the concentration of vapors in the reservoir. A controlled flow of air is pulsed over the quartz wool releasing a preset quantity of vapors at the outlet.

  1. Calibrated vapor generator source

    DOE Patents [OSTI]

    Davies, J.P.; Larson, R.A.; Goodrich, L.D.; Hall, H.J.; Stoddard, B.D.; Davis, S.G.; Kaser, T.G.; Conrad, F.J.

    1995-09-26

    A portable vapor generator is disclosed that can provide a controlled source of chemical vapors, such as, narcotic or explosive vapors. This source can be used to test and calibrate various types of vapor detection systems by providing a known amount of vapors to the system. The vapor generator is calibrated using a reference ion mobility spectrometer. A method of providing this vapor is described, as follows: explosive or narcotic is deposited on quartz wool, placed in a chamber that can be heated or cooled (depending on the vapor pressure of the material) to control the concentration of vapors in the reservoir. A controlled flow of air is pulsed over the quartz wool releasing a preset quantity of vapors at the outlet. 10 figs.

  2. Light emitting ceramic device

    DOE Patents [OSTI]

    Valentine, Paul; Edwards, Doreen D.; Walker, Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

    2010-05-18

    A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, is herein claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

  3. Chemical vapor deposition of fluorine-doped zinc oxide

    DOE Patents [OSTI]

    Gordon, Roy G.; Kramer, Keith; Liang, Haifan

    2000-06-06

    Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

  4. Vaporization, dispersion, and radiant fluxes from LPG spills. Final report

    SciTech Connect (OSTI)

    Not Available

    1981-12-01

    Both burning and non-burning spills of LPG (primarily propane) were studied. Vaporization rates for propane spills on soil, concrete, insulating concrete, asphalt, sod, wood, and polymer foams were measured. Thermal conductivity, heat transfer coefficients, and steady state vaporization rates were determined. Vapor concentrations were measured downwind of open propane pools 25, 100, 400, and 1600 ft/sup 2/ in area. A Gaussian dispersion model modified for area sources provided a good correlation of measured concentrations. Emitted and incident radiant fluxes from propane fires were measured. Simplified flame radiation models were adequate for predicting radiant fluxes; the maximum effective flux emitted at the flame surface was about 50,000 Btu/h-ft/sup 2/. A few tests in which propane was sprayed into the air showed that at moderately high spray rates all the propane flashed to vapor or atomized; no liquid collected on the ground.

  5. Resonantly enhanced method for generation of tunable, coherent vacuum-ultraviolet radiation

    DOE Patents [OSTI]

    Glownia, J.H.; Sander, R.K.

    1982-06-29

    Carbon Monoxide vapor is used to generate coherent, tunable vacuum ultraviolet radiation by third-harmonic generation using a single tunable dye laser. The presence of a nearby electronic level resonantly enhances the nonlinear susceptibility of this molecule allowing efficient generation of the vuv light at modest pump laser intensities, thereby reducing the importance of a six-photon multiple-photon ionization process which is also resonantly enhanced by the same electronic level but no higher order. By choosing the pump radiation wavelength to be of shorter wavelength than individual vibronic levels used to extend tunability stepwise from 154.4 to 124.6 nm, and the intensity to be low enough, multiple-photon ionization can be eliminated. Excitation spectra of the third-harmonic emission output exhibit shifts to shorter wavelength and broadening with increasing CO pressure due to phase matching effects. Increasing the carbon monoxide pressure, therefore, allows the substantial filling in of gaps arising from the stepwise tuning thereby providing almost continuous tunability over the quoted range of wavelength emitted.

  6. Resonantly enhanced method for generation of tunable, coherent vacuum ultraviolet radiation

    DOE Patents [OSTI]

    Glownia, James H.; Sander, Robert K.

    1985-01-01

    Carbon Monoxide vapor is used to generate coherent, tunable vacuum ultraviolet radiation by third-harmonic generation using a single tunable dye laser. The presence of a nearby electronic level resonantly enhances the nonlinear susceptibility of this molecule allowing efficient generation of the vuv light at modest pump laser intensities, thereby reducing the importance of a six-photon multiple-photon ionization process which is also resonantly enhanced by the same electronic level but to higher order. By choosing the pump radiation wavelength to be of shorter wavelength than individual vibronic levels used to extend tunability stepwise from 154.4 to 124.6 nm, and the intensity to be low enough, multiple-photon ionization can be eliminated. Excitation spectra of the third-harmonic emission output exhibit shifts to shorter wavelength and broadening with increasing CO pressure due to phase matching effects. Increasing the carbon monoxide pressure, therefore, allows the substantial filling in of gaps arising from the stepwise tuning thereby providing almost continuous tunability over the quoted range of wavelength emitted.

  7. ARM Water Vapor IOP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ARM Water Vapor IOP The SGP CART site will host the third ARM water vapor IOP on September 18-October 8, 2000. The CART site is home to a powerful array of instruments capable of ...

  8. G-Band Vapor Radiometer Precipitable Water Vapor (GVRPWV) Value...

    Office of Scientific and Technical Information (OSTI)

    G-Band Vapor Radiometer Precipitable Water Vapor (GVRPWV) Value-Added Product Citation Details In-Document Search Title: G-Band Vapor Radiometer Precipitable Water Vapor (GVRPWV) ...

  9. VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY COAL TARS...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY COAL TARS Citation Details In-Document Search Title: VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY COAL TARS You are ...

  10. Advanced Ultraviolet Spectroradiometer

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Lee Harrison of the State University of New York at Albany and is funded by the United States Department of Agriculture (USDA). The sun emits a vast amount of energy in the form of ...

  11. Controlling the vapor pressure of a mercury lamp

    DOE Patents [OSTI]

    Grossman, Mark W.; George, William A.

    1988-01-01

    The invention described herein discloses a method and apparatus for controlling the Hg vapor pressure within a lamp. This is done by establishing and controlling two temperature zones within the lamp. One zone is colder than the other zone. The first zone is called the cold spot. By controlling the temperature of the cold spot, the Hg vapor pressure within the lamp is controlled. Likewise, by controlling the Hg vapor pressure of the lamp, the intensity and linewidth of the radiation emitted from the lamp is controlled.

  12. Controlling the vapor pressure of a mercury lamp

    DOE Patents [OSTI]

    Grossman, M.W.; George, W.A.

    1988-05-24

    The invention described herein discloses a method and apparatus for controlling the Hg vapor pressure within a lamp. This is done by establishing and controlling two temperature zones within the lamp. One zone is colder than the other zone. The first zone is called the cold spot. By controlling the temperature of the cold spot, the Hg vapor pressure within the lamp is controlled. Likewise, by controlling the Hg vapor pressure of the lamp, the intensity and linewidth of the radiation emitted from the lamp is controlled. 2 figs.

  13. Inorganic volumetric light source excited by ultraviolet light

    DOE Patents [OSTI]

    Reed, Scott; Walko, Robert J.; Ashley, Carol S.; Brinker, C. Jeffrey

    1994-01-01

    The invention relates to a composition for the volumetric generation of radiation. The composition comprises a porous substrate loaded with a component capable of emitting radiation upon interaction with an exciting radiation. Preferably, the composition is an aerogel substrate loaded with a component, e.g., a phosphor, capable of interacting with exciting radiation of a first energy, e.g., ultraviolet light, to produce radiation of a second energy, e.g., visible light.

  14. Inorganic volumetric light source excited by ultraviolet light

    DOE Patents [OSTI]

    Reed, S.; Walko, R.J.; Ashley, C.S.; Brinker, C.J.

    1994-04-26

    The invention relates to a composition for the volumetric generation of radiation. The composition comprises a porous substrate loaded with a component capable of emitting radiation upon interaction with an exciting radiation. Preferably, the composition is an aerogel substrate loaded with a component, e.g., a phosphor, capable of interacting with exciting radiation of a first energy, e.g., ultraviolet light, to produce radiation of a second energy, e.g., visible light. 4 figures.

  15. Chemical vapor deposition of fluorinated polymers

    SciTech Connect (OSTI)

    Moore, J.A.; Lang, C.I.; Lu, T.M.; You, L.

    1993-12-31

    An overview of the authors` work directed toward the deposition of fluorinated polymers by condensation of thermally or photochemically generated intermediates directly from the vapor state will be presented. Previously known materials such as Teflon AF{reg_sign} and Parylene AF{sub 4} have been successfully deposited and are being evaluated for microelectronic application as on-chip dielectrics. A novel, one-step route to Parylene AF{sub 4} will be described which obviates the necessity of multistep organic synthesis to prepare precursors. A new, partially fluorinated parylene obtained from tetrafluoro-p-xylene will be described. It has also been observed that ultraviolet irradiation of the vapor of dimethyl tetrafluorobenzocyclobutene causes the deposition of an insoluble film which contains fluorine.

  16. Vapor Barriers or Vapor Diffusion Retarders | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Weatherize » Moisture Control » Vapor Barriers or Vapor Diffusion Retarders Vapor Barriers or Vapor Diffusion Retarders Vapor diffusion retarders installed in a crawlspace can be part of an overall moisture control strategy for your home. | Photo courtesy of Dennis Schroeder, NREL. Vapor diffusion retarders installed in a crawlspace can be part of an overall moisture control strategy for your home. | Photo courtesy of Dennis Schroeder, NREL. In most U.S. climates, vapor barriers, or -- more

  17. Vapor spill monitoring method

    DOE Patents [OSTI]

    Bianchini, Gregory M.; McRae, Thomas G.

    1985-01-01

    Method for continuous sampling of liquified natural gas effluent from a spill pipe, vaporizing the cold liquified natural gas, and feeding the vaporized gas into an infrared detector to measure the gas composition. The apparatus utilizes a probe having an inner channel for receiving samples of liquified natural gas and a surrounding water jacket through which warm water is flowed to flash vaporize the liquified natural gas.

  18. ARM - Water Vapor

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Water Vapor Outreach Home Room News Publications Traditional Knowledge Kiosks Barrow, ... FAQ Just for Fun Meet our Friends Cool Sites Teachers Teachers' Toolbox Lesson Plans Water ...

  19. Atmospheric Emitted Radiance Interferometer (AERI) Handbook

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Gero, Jonathan; Hackel, Denny; Garcia, Raymond

    2005-01-01

    The atmospheric emitted radiance interferometer (AERI) is a ground-based instrument that measures the downwelling infrared radiance from the Earth’s atmosphere. The observations have broad spectral content and sufficient spectral resolution to discriminate among gaseous emitters (e.g., carbon dioxide and water vapor) and suspended matter (e.g., aerosols, water droplets, and ice crystals). These upward-looking surface observations can be used to obtain vertical profiles of tropospheric temperature and water vapor, as well as measurements of trace gases (e.g., ozone, carbon monoxide, and methane) and downwelling infrared spectral signatures of clouds and aerosols.The AERI is a passive remote sounding instrument, employing a Fourier transform spectrometer operating in the spectral range 3.3–19.2 μm (520–3020 cm-1) at an unapodized resolution of 0.5 cm-1 (max optical path difference of 1 cm). The extended-range AERI (ER-AERI) deployed in dry climates, like in Alaska, have a spectral range of 3.3–25.0 μm (400–3020 cm-1) that allow measurements in the far-infrared region. Typically, the AERI averages views of the sky over a 16-second interval and operates continuously.

  20. Monitoring of vapor phase polycyclic aromatic hydrocarbons

    DOE Patents [OSTI]

    Vo-Dinh, Tuan; Hajaligol, Mohammad R.

    2004-06-01

    An apparatus for monitoring vapor phase polycyclic aromatic hydrocarbons in a high-temperature environment has an excitation source producing electromagnetic radiation, an optical path having an optical probe optically communicating the electromagnetic radiation received at a proximal end to a distal end, a spectrometer or polychromator, a detector, and a positioner coupled to the first optical path. The positioner can slidably move the distal end of the optical probe to maintain the distal end position with respect to an area of a material undergoing combustion. The emitted wavelength can be directed to a detector in a single optical probe 180.degree. backscattered configuration, in a dual optical probe 180.degree. backscattered configuration or in a dual optical probe 90.degree. side scattered configuration. The apparatus can be used to monitor an emitted wavelength of energy from a polycyclic aromatic hydrocarbon as it fluoresces in a high temperature environment.

  1. Vapor Pressures and Heats of Vaporization of Primary Coal Tars

    Office of Scientific and Technical Information (OSTI)

    ... Therefore, future research could be directed at measuring the vapor pressures for the ... The results from the current work show that measuring the vapor pressures of complicated ...

  2. Temperature, Water Vapor, and Clouds"

    Office of Scientific and Technical Information (OSTI)

    Radiometric Studies of Temperature, Water Vapor, and Clouds" Project ID: 0011106 ... measurements of column amounts of water vapor and cloud liquid has been well ...

  3. Atomic vapor laser isotope separation

    SciTech Connect (OSTI)

    Stern, R.C.; Paisner, J.A.

    1986-08-15

    The atomic vapor laser isotope separation (AVLIS) process for the enrichment of uranium is evaluated. (AIP)

  4. SciTech Connect: "light emitting diode"

    Office of Scientific and Technical Information (OSTI)

    light emitting diode" Find + Advanced Search Term Search Semantic Search Advanced Search All Fields: "light emitting diode" Semantic Semantic Term Title: Full Text:...

  5. Ultraviolet radiation induced discharge laser

    DOE Patents [OSTI]

    Gilson, Verle A.; Schriever, Richard L.; Shearer, James W.

    1978-01-01

    An ultraviolet radiation source associated with a suitable cathode-anode electrode structure, disposed in a gas-filled cavity of a high pressure pulsed laser, such as a transverse electric atmosphere (TEA) laser, to achieve free electron production in the gas by photoelectric interaction between ultraviolet radiation and the cathode prior to the gas-exciting cathode-to-anode electrical discharge, thereby providing volume ionization of the gas. The ultraviolet radiation is produced by a light source or by a spark discharge.

  6. Infrared emitting device and method

    DOE Patents [OSTI]

    Kurtz, Steven R.; Biefeld, Robert M.; Dawson, L. Ralph; Howard, Arnold J.; Baucom, Kevin C.

    1997-01-01

    An infrared emitting device and method. The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns.

  7. Extreme ultraviolet lithography machine

    DOE Patents [OSTI]

    Tichenor, Daniel A.; Kubiak, Glenn D.; Haney, Steven J.; Sweeney, Donald W.

    2000-01-01

    An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

  8. Electrolyte vapor condenser

    DOE Patents [OSTI]

    Sederquist, R.A.; Szydlowski, D.F.; Sawyer, R.D.

    1983-02-08

    A system is disclosed for removing electrolyte from a fuel cell gas stream. The gas stream containing electrolyte vapor is supercooled utilizing conventional heat exchangers and the thus supercooled gas stream is passed over high surface area passive condensers. The condensed electrolyte is then drained from the condenser and the remainder of the gas stream passed on. The system is particularly useful for electrolytes such as phosphoric acid and molten carbonate, but can be used for other electrolyte cells and simple vapor separation as well. 3 figs.

  9. Vapor concentration monitor

    DOE Patents [OSTI]

    Bayly, John G.; Booth, Ronald J.

    1977-01-01

    An apparatus for monitoring the concentration of a vapor, such as heavy water, having at least one narrow bandwidth in its absorption spectrum, in a sample gas such as air. The air is drawn into a chamber in which the vapor content is measured by means of its radiation absorption spectrum. High sensitivity is obtained by modulating the wavelength at a relatively high frequency without changing its optical path, while high stability against zero drift is obtained by the low frequency interchange of the sample gas to be monitored and of a reference sample. The variable HDO background due to natural humidity is automatically corrected.

  10. Blue light emitting thiogallate phosphor

    DOE Patents [OSTI]

    Dye, Robert C.; Smith, David C.; King, Christopher N.; Tuenge, Richard T.

    1998-01-01

    A crystalline blue emitting thiogallate phosphor of the formula RGa.sub.2 S.sub.4 :Ce.sub.x where R is selected from the group consisting of calcium, strontium, barium and zinc, and x is from about 1 to 10 atomic percent, the phosphor characterized as having a crystalline microstructure on the size order of from about 100 .ANG. to about 10,000 .ANG. is provided together with a process of preparing a crystalline blue emitting thiogallate phosphor by depositing on a substrate by CVD and resultant thin film electroluminescent devices including a layer of such deposited phosphor on an ordinary glass substrate.

  11. Solvent vapor collector

    DOE Patents [OSTI]

    Ellison, Kenneth; Whike, Alan S.

    1979-01-30

    A solvent vapor collector is mounted on the upstream inlet end of an oven having a gas-circulating means and intended for curing a coating applied to a strip sheet metal at a coating station. The strip sheet metal may be hot and solvent vapors are evaporated at the coating station and from the strip as it passes from the coating station to the oven. Upper and lower plenums within a housing of the collector are supplied with oven gases or air from the gas-circulating means and such gases or air are discharged within the collector obliquely in a downstream direction against the strip passing through that collector to establish downstream gas flows along the top and under surfaces of the strip so as, in turn, to induct solvent vapors into the collector at the coating station. A telescopic multi-piece shroud is usefully provided on the housing for movement between an extended position in which it overlies the coating station to collect solvent vapors released thereat and a retracted position permitting ready cleaning and adjustment of that coating station.

  12. Category:Mercury Vapor | Open Energy Information

    Open Energy Info (EERE)

    Mercury Vapor Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Geothermalpower.jpg Looking for the Mercury Vapor page? For detailed information on Mercury Vapor as...

  13. Infrared emitting device and method

    DOE Patents [OSTI]

    Kurtz, S.R.; Biefeld, R.M.; Dawson, L.R.; Howard, A.J.; Baucom, K.C.

    1997-04-29

    The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns. 8 figs.

  14. Broadband light-emitting diode

    DOE Patents [OSTI]

    Fritz, Ian J.; Klem, John F.; Hafich, Michael J.

    1998-01-01

    A broadband light-emitting diode. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3-2 .mu.m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-division-multiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft.

  15. Broadband light-emitting diode

    DOE Patents [OSTI]

    Fritz, I.J.; Klem, J.F.; Hafich, M.J.

    1998-07-14

    A broadband light-emitting diode is disclosed. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3--2 {micro}m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-divisionmultiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft. 10 figs.

  16. Organic vapor jet printing system

    DOE Patents [OSTI]

    Forrest, Stephen R

    2012-10-23

    An organic vapor jet printing system includes a pump for increasing the pressure of an organic flux.

  17. Organic vapor jet printing system

    DOE Patents [OSTI]

    Forrest, Stephen R.

    2016-05-03

    An organic vapor jet printing system includes a pump for increasing the pressure of an organic flux.

  18. Stratified vapor generator

    DOE Patents [OSTI]

    Bharathan, Desikan; Hassani, Vahab

    2008-05-20

    A stratified vapor generator (110) comprises a first heating section (H.sub.1) and a second heating section (H.sub.2). The first and second heating sections (H.sub.1, H.sub.2) are arranged so that the inlet of the second heating section (H.sub.2) is operatively associated with the outlet of the first heating section (H.sub.1). A moisture separator (126) having a vapor outlet (164) and a liquid outlet (144) is operatively associated with the outlet (124) of the second heating section (H.sub.2). A cooling section (C.sub.1) is operatively associated with the liquid outlet (144) of the moisture separator (126) and includes an outlet that is operatively associated with the inlet of the second heating section (H.sub.2).

  19. Filter vapor trap

    DOE Patents [OSTI]

    Guon, Jerold

    1976-04-13

    A sintered filter trap is adapted for insertion in a gas stream of sodium vapor to condense and deposit sodium thereon. The filter is heated and operated above the melting temperature of sodium, resulting in a more efficient means to remove sodium particulates from the effluent inert gas emanating from the surface of a liquid sodium pool. Preferably the filter leaves are precoated with a natrophobic coating such as tetracosane.

  20. The vapor pressures of explosives

    SciTech Connect (OSTI)

    Ewing, Robert G.; Waltman, Melanie J.; Atkinson, David A.; Grate, Jay W.; Hotchkiss, Peter

    2013-01-05

    The vapor pressures of many explosive compounds are extremely low and thus determining accurate values proves difficult. Many researchers, using a variety of methods, have measured and reported the vapor pressures of explosives compounds at single temperatures, or as a function of temperature using vapor pressure equations. There are large variations in reported vapor pressures for many of these compounds, and some errors exist within individual papers. This article provides a review of explosive vapor pressures and describes the methods used to determine them. We have compiled primary vapor pressure relationships traceable to the original citations and include the temperature ranges for which they have been determined. Corrected values are reported as needed and described in the text. In addition, after critically examining the available data, we calculate and tabulate vapor pressures at 25 C.

  1. Quantum Dot Light Emitting Diode

    SciTech Connect (OSTI)

    Keith Kahen

    2008-07-31

    The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m2, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

  2. Quantum Dot Light Emitting Diode

    SciTech Connect (OSTI)

    Kahen, Keith

    2008-07-31

    The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m{sup 2}, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

  3. Porous light-emitting compositions

    DOE Patents [OSTI]

    Burrell, Anthony K.; McCleskey, Thomas Mark; Jia, Quanxi; Bauer, Eve; Mueller, Alexander H.

    2012-04-17

    Light-emitting devices are prepared by coating a porous substrate using a polymer-assisted deposition process. Solutions of metal precursor and soluble polymers having binding properties for metal precursor were coated onto porous substrates. The coated substrates were heated at high temperatures under a suitable atmosphere. The result was a substrate with a conformal coating that did not substantially block the pores of the substrate.

  4. White light-emitting organic electroluminescent devices

    DOE Patents [OSTI]

    Shiang, Joseph John; Duggal, Anil Raj; Parthasarathy, Gautam

    2006-06-20

    A light-emitting device comprises a light-emitting member, which comprises two electrodes, at least two organic electroluminescent ("EL") materials disposed between the electrodes, a charge blocking material disposed between the electrodes, and at least one photoluminescent ("PL") material. The light-emitting member emits electromagnetic ("EM") radiation having a first spectrum in response to a voltage applied across the two electrodes. The PL material absorbs a portion of the EM radiation emitted by the light-emitting member and emits EM radiation having second spectrum different than the first spectrum. Each of the organic EL materials emits EM radiation having a wavelength range selected from the group consisting of blue and red wavelength ranges.

  5. Visible light emitting vertical cavity surface emitting lasers

    DOE Patents [OSTI]

    Bryan, Robert P. (Boulder, CO); Olbright, Gregory R. (Boulder, CO); Lott, James A. (Albuquerque, NM); Schneider, Jr., Richard P. (Albuquerque, NM)

    1995-01-01

    A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of .lambda./2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In.sub.z (Al.sub.y Ga.sub.1-y).sub.1-z P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m .lambda./2n.sub.eff where m is an integer and n.sub.eff is the effective index of refraction of the laser cavity, and the spacer layer and one of the mirrors being transmissive to radiation having a wavelength of .lambda./n, typically within the green to red portion of the visible spectrum.

  6. Visible light emitting vertical cavity surface emitting lasers

    DOE Patents [OSTI]

    Bryan, R.P.; Olbright, G.R.; Lott, J.A.; Schneider, R.P. Jr.

    1995-06-27

    A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of {lambda}/2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In{sub z}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}z}P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m {lambda}/2n{sub eff} where m is an integer and n{sub eff} is the effective index of refraction of the laser cavity, and the spacer layer and one of the mirrors being transmissive to radiation having a wavelength of {lambda}/n, typically within the green to red portion of the visible spectrum. 10 figs.

  7. Vapor spill pipe monitor

    DOE Patents [OSTI]

    Bianchini, G.M.; McRae, T.G.

    1983-06-23

    The invention is a method and apparatus for continually monitoring the composition of liquefied natural gas flowing from a spill pipe during a spill test by continually removing a sample of the LNG by means of a probe, gasifying the LNG in the probe, and sending the vaporized LNG to a remote ir gas detector for analysis. The probe comprises three spaced concentric tubes surrounded by a water jacket which communicates with a flow channel defined between the inner and middle, and middle and outer tubes. The inner tube is connected to a pump for providing suction, and the probe is positioned in the LNG flow below the spill pipe with the tip oriented partly downward so that LNG is continuously drawn into the inner tube through a small orifice. The probe is made of a high thermal conductivity metal. Hot water is flowed through the water jacket and through the flow channel between the three tubes to provide the necessary heat transfer to flash vaporize the LNG passing through the inner channel of the probe. The gasified LNG is transported through a connected hose or tubing extending from the probe to a remote ir sensor which measures the gas composition.

  8. Vaporization of zinc from scrap

    SciTech Connect (OSTI)

    Ozturk, B.; Fruehan, R.J.

    1996-12-31

    The rate of zinc vaporization from galvanized scrap was measured using a thermogravimetric apparatus along with chemical analysis. It is found that the rate of zinc vaporization is very fast in nitrogen and carbon monoxide atmospheres at temperatures higher than 950 C. At lower temperature rate decreases with decreasing temperature and is controlled by the gas phase mass transport. The simultaneous oxidation and vaporization of zinc occurs when the samples were heated in carbon dioxide and air. The current experimental results indicate that almost all of the zinc from scrap vaporizes during the heating process in a very short period of time after the temperature reaches above 850 C.

  9. Extreme ultraviolet spectra of highly ionized Ge, Kr and Mo emitted by imploding plasmas

    SciTech Connect (OSTI)

    Goldsmith, S.; Feldman, U.; Cohen, L.; Behring, W.E.

    1984-01-01

    Spectra of highly ionized Ge, Kr and Mo in the spectral region of 10 to 80A were excited in laser-produced plasmas. The plasma was obtained by focusing the energy of the 24 laser beams of the University of Rochester Omega system on 0.4 mm diameter microballoon targets. The laser pulse duration was in the range of 0.87 to 1.09 ns, with total energy in the range of 1.8 to 2.2 kJ. The observed spectral lines include n = 2-2 transitions in the oxygen and fluorine isoelectronic sequences and n = 3 to 4 transitions in the sodium, magnesium and aluminum isoelectronic sequences. The present observations are compared with previous experimental and theoretical studies.

  10. Synthesis and optical properties of cadmium selenide quantum dots for white light-emitting diode application

    SciTech Connect (OSTI)

    Xu, Xianmei; Wang, Yilin; Gule, Teri; Luo, Qiang [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Zhou, Liya, E-mail: zhouliyatf@163.com [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Gong, Fuzhong [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China)

    2013-03-15

    Highlights: ? Stable CdSe QDs were synthesized by the one-step and two-level process respectively. ? The fabricated white LEDs show good white balance. ? CdSe QDs present well green to yellow band luminescence. ? CdSe QDs displayed a broad excitation band. - Abstract: Yellow light-emitting cadmium selenide quantum dots were synthesized using one-step and two-step methods in an aqueous medium. The structural luminescent properties of these quantum dots were investigated. The obtained cadmium selenide quantum dots displayed a broad excitation band suitable for blue or near-ultraviolet light-emitting diode applications. White light-emitting diodes were fabricated by coating the cadmium selenide samples onto a 460 nm-emitting indium gallium nitrite chip. Both samples exhibited good white balance. Under a 20 mA working current, the white light-emitting diode fabricated via the one-step and two-step methods showed Commission Internationale de lclairage coordinates at (0.27, 0.23) and (0.27, 0.33), respectively, and a color rendering index equal to 41 and 37, respectively. The one-step approach was simpler, greener, and more effective than the two-step approach. The one-step approach can be enhanced by combining cadmium selenide quantum dots with proper phosphors.

  11. THERMALLY OPERATED VAPOR VALVE

    DOE Patents [OSTI]

    Dorward, J.G. Jr.

    1959-02-10

    A valve is presented for use in a calutron to supply and control the vapor to be ionized. The invention provides a means readily operable from the exterior of the vacuum tank of the apparatuss without mechanical transmission of forces for the quick and accurate control of the ionizing arc by a corresponding control of gas flow theretos thereby producing an effective way of carefully regulating the operation of the calutron. The invention consists essentially of a tube member extending into the charge bottle of a calutron devices having a poppet type valve closing the lower end of the tube. An electrical heating means is provided in the valve stem to thermally vary the length of the stem to regulate the valve opening to control the flow of material from the charge bottle.

  12. Tank vapor mitigation requirements for Hanford Tank Farms

    SciTech Connect (OSTI)

    Rakestraw, L.D.

    1994-11-15

    Westinghouse Hanford Company has contracted Los Alamos Technical Associates to listing of vapors and aerosols that are or may be emitted from the High Level Waste (HLW) tanks at Hanford. Mitigation requirements under Federal and State law, as well as DOE Orders, are included in the listing. The lists will be used to support permitting activities relative to tank farm ventilation system up-grades. This task is designated Task 108 under MJB-SWV-312057 and is an extension of efforts begun under Task 53 of Purchase Order MPB-SVV-03291 5 for Mechanical Engineering Support. The results of that task, which covered only thirty-nine tanks, are repeated here to provide a single source document for vapor mitigation requirements for all 177 HLW tanks.

  13. Sensitivity calibration of an imaging extreme ultraviolet spectrometer-detector system for determining the efficiency of broadband extreme ultraviolet sources

    SciTech Connect (OSTI)

    Fuchs, S.; Roedel, C.; Bierbach, J.; Paz, A. E.; Foerster, E.; Paulus, G. G.; Krebs, M.; Haedrich, S.; Limpert, J.; Kuschel, S.; Wuensche, M.; Hilbert, V.; Zastrau, U.

    2013-02-15

    We report on the absolute sensitivity calibration of an extreme ultraviolet (XUV) spectrometer system that is frequently employed to study emission from short-pulse laser experiments. The XUV spectrometer, consisting of a toroidal mirror and a transmission grating, was characterized at a synchrotron source in respect of the ratio of the detected to the incident photon flux at photon energies ranging from 15.5 eV to 99 eV. The absolute calibration allows the determination of the XUV photon number emitted by laser-based XUV sources, e.g., high-harmonic generation from plasma surfaces or in gaseous media. We have demonstrated high-harmonic generation in gases and plasma surfaces providing 2.3 {mu}W and {mu}J per harmonic using the respective generation mechanisms.

  14. Vaporization, dispersion, and radiant fluxes from LPG spills. Final technical report

    SciTech Connect (OSTI)

    Not Available

    1982-05-01

    Both burning and non-burning spills of LPG (primarily propane) were studied. Vaporization rates for propane spills on soil, concrete, insulating concrete, asphalt, sod, wood, and polymer foams were measured. Thermal conductivity, heat transfer coefficients, and steady state vaporization rates were determined. Vapor concentrations were measured downwind of open propane pools and a Gaussian dispersion model modified for area sources provided a good correlation of measured concentrations. Emitted and incident radiant fluxes from propane fires were measured. Simplified flame radiation models were adequate for predicting radiant fluxes. Tests in which propane was sprayed into the air showed that at moderately high spray rates all the propane flashed to vapor or atomized; no liquid collected on the ground.

  15. Photoluminescence performance of thulium doped Li{sub 4}SrCa(SiO{sub 4}){sub 2} under irradiation of ultraviolet and vacuum ultraviolet lights

    SciTech Connect (OSTI)

    Wang, Zhaofeng; Li, Yezhou; Liu, Xiong; Wei, Xingmin; Chen, Yueling; Zhou, Fei; Wang, Yuhua

    2014-11-15

    Highlights: A novel blue-emitting phosphor Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} was reported. Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} exhibited excellent thermal and irradiation stability. Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} was found to possess high color purity. - Abstract: In this work, we synthesized Tm{sup 3+} doped Li{sub 4}SrCa(SiO{sub 4}){sub 2} phosphors and investigated their photoluminescence properties under the excitation of ultraviolet and vacuum ultraviolet lights. The crystal structure analysis and variation of cell parameters confirm that Tm{sup 3+} ions have been successfully doped in the structure of Li{sub 4}SrCa(SiO{sub 4}){sub 2} host by occupying the sites of Ca{sup 2+} with the coordination number of 6. The luminescence results suggest that Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} is a good blue-emitting phosphor when excited by ultraviolet and vacuum ultraviolet irradiations. In addition, it is observed that there is nearly no degradation for Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} after undergoing thermal and irradiation treatments. Possible mechanisms for the luminescence processes are proposed on the basis of the discussion of excitation and emission spectra. In particular, the emission color of Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} by excitation of 147 and 172 nm irradiations is very close to the standard blue color, suggesting that it could be potentially applied in plasma display panels and mercury-free fluorescence lamps.

  16. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Investigating Extreme Ultraviolet Lithography Mask Defects Print Wednesday, 28 July 2010 00:00 Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using

  17. Atomic vapor laser isotope separation process

    DOE Patents [OSTI]

    Wyeth, Richard W.; Paisner, Jeffrey A.; Story, Thomas

    1990-01-01

    A laser spectroscopy system is utilized in an atomic vapor laser isotope separation process. The system determines spectral components of an atomic vapor utilizing a laser heterodyne technique.

  18. Microgap ultra-violet detector

    DOE Patents [OSTI]

    Wuest, Craig R.; Bionta, Richard M.

    1994-01-01

    A microgap ultra-violet detector of photons with wavelengths less than 400 run (4000 Angstroms) which comprises an anode and a cathode separated by a gas-filled gap and having an electric field placed across the gap. Either the anode or the cathode is semi-transparent to UV light. Upon a UV photon striking the cathode an electron is expelled and accelerated across the gap by the electric field causing interactions with other electrons to create an electron avalanche which contacts the anode. The electron avalanche is detected and converted to an output pulse.

  19. Microgap ultra-violet detector

    DOE Patents [OSTI]

    Wuest, C.R.; Bionta, R.M.

    1994-09-20

    A microgap ultra-violet detector of photons with wavelengths less than 400 run (4,000 Angstroms) which comprises an anode and a cathode separated by a gas-filled gap and having an electric field placed across the gap is disclosed. Either the anode or the cathode is semi-transparent to UV light. Upon a UV photon striking the cathode an electron is expelled and accelerated across the gap by the electric field causing interactions with other electrons to create an electron avalanche which contacts the anode. The electron avalanche is detected and converted to an output pulse. 2 figs.

  20. Green emitting phosphors and blends thereof

    DOE Patents [OSTI]

    Setlur, Anant Achyut; Siclovan, Oltea Puica; Nammalwar, Prasanth Kumar; Sathyanarayan, Ramesh Rao; Porob, Digamber G.; Chandran, Ramachandran Gopi; Heward, William Jordan; Radkov, Emil Vergilov; Briel, Linda Jane Valyou

    2010-12-28

    Phosphor compositions, blends thereof and light emitting devices including white light emitting LED based devices, and backlights, based on such phosphor compositions. The devices include a light source and a phosphor material as described. Also disclosed are phosphor blends including such a phosphor and devices made therefrom.

  1. Light emitting device having peripheral emissive region

    DOE Patents [OSTI]

    Forrest, Stephen R

    2013-05-28

    Light emitting devices are provided that include one or more OLEDs disposed only on a peripheral region of the substrate. An OLED may be disposed only on a peripheral region of a substantially transparent substrate and configured to emit light into the substrate. Another surface of the substrate may be roughened or include other features to outcouple light from the substrate. The edges of the substrate may be beveled and/or reflective. The area of the OLED(s) may be relatively small compared to the substrate surface area through which light is emitted from the device. One or more OLEDs also or alternatively may be disposed on an edge of the substrate about perpendicular to the surface of the substrate through which light is emitted, such that they emit light into the substrate. A mode expanding region may be included between each such OLED and the substrate.

  2. Portable vapor diffusion coefficient meter

    DOE Patents [OSTI]

    Ho, Clifford K.

    2007-06-12

    An apparatus for measuring the effective vapor diffusion coefficient of a test vapor diffusing through a sample of porous media contained within a test chamber. A chemical sensor measures the time-varying concentration of vapor that has diffused a known distance through the porous media. A data processor contained within the apparatus compares the measured sensor data with analytical predictions of the response curve based on the transient diffusion equation using Fick's Law, iterating on the choice of an effective vapor diffusion coefficient until the difference between the predicted and measured curves is minimized. Optionally, a purge fluid can forced through the porous media, permitting the apparatus to also measure a gas-phase permeability. The apparatus can be made lightweight, self-powered, and portable for use in the field.

  3. Vapor deposition of hardened niobium

    DOE Patents [OSTI]

    Blocher, Jr., John M.; Veigel, Neil D.; Landrigan, Richard B.

    1983-04-19

    A method of coating ceramic nuclear fuel particles containing a major amount of an actinide ceramic in which the particles are placed in a fluidized bed maintained at ca. 800.degree. to ca. 900.degree. C., and niobium pentachloride vapor and carbon tetrachloride vapor are led into the bed, whereby niobium metal is deposited on the particles and carbon is deposited interstitially within the niobium. Coating apparatus used in the method is also disclosed.

  4. Supersonic cluster jet source for debris-free extreme ultraviolet production

    SciTech Connect (OSTI)

    Kubiak, G.D.; Bernardez, L.J.

    1997-09-01

    The supersonic cluster jet has been developed and characterized for use as a target medium to produce a clean source of extreme ultraviolet radiation for extreme ultraviolet lithography and other applications. Spectroscopic characterization of the laser plasma emission produced from Xe, O{sub 2} and Kr cluster gas targets has been performed. Xe is the most efficient target gas, exhibiting a conversion efficiency at 13.5 nm of 0.8% into the relevant 2.5% spectral bandwidth. The other target gases are less efficient in the spectral region of interest and, in the case of oxygen, emit {approximately}5 times less off-band radiation. The angular distribution of the Xe plasma emission has also been characterized.

  5. Organic light emitting devices for illumination

    DOE Patents [OSTI]

    Hack, Michael; Lu, Min-Hao Michael; Weaver, Michael S.

    2012-01-24

    An organic light emitting device an a method of obtaining illumination from such a device is provided. The device has a plurality of regions, each region having an organic emissive layer adapted to emit a different spectrum of light. The regions in combination emit light suitable for illumination purposes. The area of each region may be selected such that the device is more efficient than an otherwise equivalent device having regions of equal size. The regions may have an aspect ratio of at least about four. All parts of any given region may be driven at the same current.

  6. Organic light emitting devices for illumination

    DOE Patents [OSTI]

    Hack, Michael; Lu, Min-Hao Michael; Weaver, Michael S.

    2010-02-16

    An organic light emitting device is provided. The device has a plurality of regions, each region having an organic emissive layer adapted to emit a different spectrum of light. The regions in combination emit light suitable for illumination purposes. The area of each region may be selected such that the device is more efficient that an otherwise equivalent device having regions of equal size. The regions may have an aspect ratio of at least about four. All parts of any given region may be driven at the same current.

  7. Stable blue phosphorescent organic light emitting devices

    DOE Patents [OSTI]

    Forrest, Stephen R.; Thompson, Mark; Giebink, Noel

    2014-08-26

    Novel combination of materials and device architectures for organic light emitting devices is provided. An organic light emitting device, is provided, having an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer includes a host and a phosphorescent emissive dopant having a peak emissive wavelength less than 500 nm, and a radiative phosphorescent lifetime less than 1 microsecond. Preferably, the phosphorescent emissive dopant includes a ligand having a carbazole group.

  8. Demonstration Assessment of Light-Emitting Diode (LED) Freezer...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Demonstration Assessment of Light-Emitting Diode (LED) Freezer Case Lighting Demonstration Assessment of Light-Emitting Diode (LED) Freezer Case Lighting This document is a report ...

  9. Vapor deposition of thin films

    SciTech Connect (OSTI)

    Smith, D.C.; Pattillo, S.G.; Laia, J.R. Jr.; Sattelberger, A.P.

    1990-10-05

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl){sub 3}, iridium(allyl){sub 3}, molybdenum(allyl){sub 4}, tungsten(allyl){sub 4}, rhenium (allyl){sub 4}, platinum(allyl){sub 2}, or palladium(allyl){sub 2} are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  10. Vapor deposition of thin films

    DOE Patents [OSTI]

    Smith, David C. (Los Alamos, NM); Pattillo, Stevan G. (Los Alamos, NM); Laia, Jr., Joseph R. (Los Alamos, NM); Sattelberger, Alfred P. (Los Alamos, NM)

    1992-01-01

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  11. Horizontal molecular orientation in solution-processed organic light-emitting diodes

    SciTech Connect (OSTI)

    Zhao, L.; Inoue, M.; Komino, T.; Kim, J.-H.; Ribierre, J. C. E-mail: adachi@cstf.kyushu-u.ac.jp [Center for Organic Photonics and Electronics Research , Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395; Japan Science and Technology Agency , ERATO, Adachi Molecular Exciton Engineering Project, c and others

    2015-02-09

    Horizontal orientation of the emission transition dipole moments achieved in glassy vapor-deposited organic thin films leads to an enhancement of the light out-coupling efficiency in organic light-emitting diodes (OLEDs). Here, our combined study of variable angle spectroscopic ellipsometry and angle dependent photoluminescence demonstrates that such a horizontal orientation can be achieved in glassy spin-coated organic films based on a composite blend of a heptafluorene derivative as a dopant and a 4,4′-bis(N-carbazolyl)-1,1′-biphenyl as a host. Solution-processed fluorescent OLEDs with horizontally oriented heptafluorene emitters were then fabricated and emitted deep blue electroluminescence with an external quantum efficiency as high as 5.3%.

  12. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  13. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  14. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  15. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  16. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  17. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  18. Ultraviolet Behavior of N = 8 supergravity

    SciTech Connect (OSTI)

    Dixon, Lance J.

    2010-06-07

    In these lectures the author describes the remarkable ultraviolet behavior of N = 8 supergravity, which through four loops is no worse than that of N = 4 super-Yang-Mills theory (a finite theory). I also explain the computational tools that allow multi-loop amplitudes to be evaluated in this theory - the KLT relations and the unitarity method - and sketch how ultraviolet divergences are extracted from the amplitudes.

  19. Vapor generation methods for explosives detection research

    SciTech Connect (OSTI)

    Grate, Jay W.; Ewing, Robert G.; Atkinson, David A.

    2012-12-01

    The generation of calibrated vapor samples of explosives compounds remains a challenge due to the low vapor pressures of the explosives, adsorption of explosives on container and tubing walls, and the requirement to manage (typically) multiple temperature zones as the vapor is generated, diluted, and delivered. Methods that have been described to generate vapors can be classified as continuous or pulsed flow vapor generators. Vapor sources for continuous flow generators are typically explosives compounds supported on a solid support, or compounds contained in a permeation or diffusion device. Sources are held at elevated isothermal temperatures. Similar sources can be used for pulsed vapor generators; however, pulsed systems may also use injection of solutions onto heated surfaces with generation of both solvent and explosives vapors, transient peaks from a gas chromatograph, or vapors generated by s programmed thermal desorption. This article reviews vapor generator approaches with emphasis on the method of generating the vapors and on practical aspects of vapor dilution and handling. In addition, a gas chromatographic system with two ovens that is configurable with up to four heating ropes is proposed that could serve as a single integrated platform for explosives vapor generation and device testing. Issues related to standards, calibration, and safety are also discussed.

  20. Vacuum vapor deposition gun assembly

    DOE Patents [OSTI]

    Zeren, Joseph D.

    1985-01-01

    A vapor deposition gun assembly includes a hollow body having a cylindrical outer surface and an end plate for holding an adjustable heat sink, a hot hollow cathode gun, two magnets for steering the plasma from the gun into a crucible on the heat sink, and a shutter for selectively covering and uncovering the crucible.

  1. An optical water vapor sensor for unmanned aerial vehicles (Technical...

    Office of Scientific and Technical Information (OSTI)

    An optical water vapor sensor for unmanned aerial vehicles Citation Details In-Document Search Title: An optical water vapor sensor for unmanned aerial vehicles The water vapor ...

  2. Side-emitting fiber optic position sensor

    DOE Patents [OSTI]

    Weiss, Jonathan D.

    2008-02-12

    A side-emitting fiber optic position sensor and method of determining an unknown position of an object by using the sensor. In one embodiment, a concentrated beam of light source illuminates the side of a side-emitting fiber optic at an unknown axial position along the fiber's length. Some of this side-illuminated light is in-scattered into the fiber and captured. As the captured light is guided down the fiber, its intensity decreases due to loss from side-emission away from the fiber and from bulk absorption within the fiber. By measuring the intensity of light emitted from one (or both) ends of the fiber with a photodetector(s), the axial position of the light source is determined by comparing the photodetector's signal to a calibrated response curve, look-up table, or by using a mathematical model. Alternatively, the side-emitting fiber is illuminated at one end, while a photodetector measures the intensity of light emitted from the side of the fiber, at an unknown position. As the photodetector moves further away from the illuminated end, the detector's signal strength decreases due to loss from side-emission and/or bulk absorption. As before, the detector's signal is correlated to a unique position along the fiber.

  3. Atomic vapor laser isotope separation process

    DOE Patents [OSTI]

    Wyeth, R.W.; Paisner, J.A.; Story, T.

    1990-08-21

    A laser spectroscopy system is utilized in an atomic vapor laser isotope separation process. The system determines spectral components of an atomic vapor utilizing a laser heterodyne technique. 23 figs.

  4. ARM - Field Campaign - Water Vapor IOP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : Water Vapor IOP ... Responses to Site Operations Questionnaires for Water Vapor IOP Instrument Name Instrument ...

  5. Vapor phase modifiers for oxidative coupling

    DOE Patents [OSTI]

    Warren, Barbara K.

    1991-01-01

    Volatilized metal compounds retard vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

  6. Vapor Retarder Classification - Building America Top Innovation |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Vapor Retarder Classification - Building America Top Innovation Vapor Retarder Classification - Building America Top Innovation Photo of a vapor retarder classification. Air-tight and well-insulated homes have little or no tolerance for drying if they get wet; moisture control is critical. This Top Innovation profile describes Building America research that established vapor retarder classifications and appropriate applications that has been instrumental in the market

  7. Visible light surface emitting semiconductor laser

    DOE Patents [OSTI]

    Olbright, Gregory R.; Jewell, Jack L.

    1993-01-01

    A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Specific embodiments of the invention for generating red, green, and blue radiation are described.

  8. Chemical vapor deposition of sialon

    DOE Patents [OSTI]

    Landingham, R.L.; Casey, A.W.

    A laminated composite and a method for forming the composite by chemical vapor deposition are described. The composite includes a layer of sialon and a material to which the layer is bonded. The method includes the steps of exposing a surface of the material to an ammonia containing atmosphere; heating the surface to at least about 1200/sup 0/C; and impinging a gas containing N/sub 2/, SiCl/sub 4/, and AlCl/sub 3/ on the surface.

  9. Means and method for vapor generation

    DOE Patents [OSTI]

    Carlson, Larry W.

    1984-01-01

    A liquid, in heat transfer contact with a surface heated to a temperature well above the vaporization temperature of the liquid, will undergo a multiphase (liquid-vapor) transformation from 0% vapor to 100% vapor. During this transition, the temperature driving force or heat flux and the coefficients of heat transfer across the fluid-solid interface, and the vapor percentage influence the type of heating of the fluid--starting as "feedwater" heating where no vapors are present, progressing to "nucleate" heating where vaporization begins and some vapors are present, and concluding with "film" heating where only vapors are present. Unstable heating between nucleate and film heating can occur, accompanied by possibly large and rapid temperature shifts in the structures. This invention provides for injecting into the region of potential unstable heating and proximate the heated surface superheated vapors in sufficient quantities operable to rapidly increase the vapor percentage of the multiphase mixture by perhaps 10-30% and thereby effectively shift the multiphase mixture beyond the unstable heating region and up to the stable film heating region.

  10. Means and method for vapor generation

    DOE Patents [OSTI]

    Carlson, L.W.

    A liquid, in heat transfer contact with a surface heated to a temperature well above the vaporization temperature of the liquid, will undergo a multiphase (liquid-vapor) transformation from 0% vapor to 100% vapor. During this transition, the temperature driving force or heat flux and the coefficients of heat transfer across the fluid-solid interface, and the vapor percentage influence the type of heating of the fluid - starting as feedwater heating where no vapors are present, progressing to nucleate heating where vaporization begins and some vapors are present, and concluding with film heating where only vapors are present. Unstable heating between nucleate and film heating can occur, accompanied by possibly large and rapid temperature shifts in the structures. This invention provides for injecting into the region of potential unstable heating and proximate the heated surface superheated vapors in sufficient quantities operable to rapidly increase the vapor percentage of the multiphase mixture by perhaps 10 to 30% and thereby effectively shift the multiphase mixture beyond the unstable heating region and up to the stable film heating region.

  11. Process for recovering organic vapors from air

    DOE Patents [OSTI]

    Baker, Richard W.

    1985-01-01

    A process for recovering and concentrating organic vapor from a feed stream of air having an organic vapor content of no more than 20,000 ppm by volume. A thin semipermeable membrane is provided which has a feed side and a permeate side, a selectivity for organic vapor over air of at least 50, as measured by the ratio of organic vapor permeability to nitrogen permeability, and a permeability of organic vapor of at least 3.times.10.sup.-7 cm.sup.3 (STP) cm/cm.sup.2 sec.cm Hg. The feed stream is passed across the feed side of the thin semipermeable membrane while providing a pressure on the permeate side which is lower than the feed side by creating a partial vacuum on the permeate side so that organic vapor passes preferentially through the membrane to form an organic vapor depleted air stream on the feed side and an organic vapor enriched stream on the permeate side. The organic vapor which has passed through the membrane is compressed and condensed to recover the vapor as a liquid.

  12. Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

    SciTech Connect (OSTI)

    Lijuan Zou

    2003-08-05

    Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm{sup 2}, the optimal radiance R could reach 0.38 mW/cm{sup 2}, and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be {approx} 10{sup -5} cm{sup 2}/Vs and {approx} 10{sup -4} cm{sup 2}/Vs, respectively. Overshoot effects in the transient El of blue light emitting devices were also observed and studied. This effect was attributed to the charge accumulation at the organic/organic and organic/cathode interfaces.

  13. Vacuum ultraviolet laser (Patent) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Vacuum ultraviolet laser Citation Details In-Document Search Title: Vacuum ultraviolet laser Transitions from the 2p.sup.4 (.sup.1 S.sub.0)3s .sup.2 S.sub.12 state of atomic ...

  14. Chemical vapor deposition of sialon

    DOE Patents [OSTI]

    Landingham, Richard L.; Casey, Alton W.

    1982-01-01

    A laminated composite and a method for forming the composite by chemical vapor deposition. The composite includes a layer of sialon and a material to which the layer is bonded. The method includes the steps of exposing a surface of the material to an ammonia containing atmosphere; heating the surface to at least about 1200.degree. C.; and impinging a gas containing in a flowing atmosphere of air N.sub.2, SiCl.sub.4, and AlCl.sub.3 on the surface.

  15. Wick for metal vapor laser

    DOE Patents [OSTI]

    Duncan, David B. (Livermore, CA)

    1992-01-01

    An improved wick for a metal vapor laser is made of a refractory metal cylinder, preferably molybdenum or tungsten for a copper laser, which provides the wicking surface. Alternately, the inside surface of the ceramic laser tube can be metalized to form the wicking surface. Capillary action is enhanced by using wire screen, porous foam metal, or grooved surfaces. Graphite or carbon, in the form of chunks, strips, fibers or particles, is placed on the inside surface of the wick to reduce water, reduce metal oxides and form metal carbides.

  16. Suppression of H_2 Cooling in the Ultraviolet Background (Journal...

    Office of Scientific and Technical Information (OSTI)

    Country of Publication: United States Language: English Subject: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ASTROPHYSICS; HYDROGEN; COOLING; ULTRAVIOLET RADIATION; ...

  17. Method of making organic light emitting devices

    DOE Patents [OSTI]

    Shiang, Joseph John; Janora, Kevin Henry; Parthasarathy, Gautam; Cella, James Anthony; Chichak, Kelly Scott

    2011-03-22

    The present invention provides a method for the preparation of organic light-emitting devices comprising a bilayer structure made by forming a first film layer comprising an electroactive material and an INP precursor material, and exposing the first film layer to a radiation source under an inert atmosphere to generate an interpenetrating network polymer composition comprising the electroactive material. At least one additional layer is disposed on the reacted first film layer to complete the bilayer structure. The bilayer structure is comprised within an organic light-emitting device comprising standard features such as electrodes and optionally one or more additional layers serving as a bipolar emission layer, a hole injection layer, an electron injection layer, an electron transport layer, a hole transport layer, exciton-hole transporting layer, exciton-electron transporting layer, a hole transporting emission layer, or an electron transporting emission layer.

  18. Control of flow through a vapor generator

    DOE Patents [OSTI]

    Radcliff, Thomas D.

    2005-11-08

    In a Rankine cycle system wherein a vapor generator receives heat from exhaust gases, provision is made to avoid overheating of the refrigerant during ORC system shut down while at the same time preventing condensation of those gases within the vapor generator when its temperature drops below a threshold temperature by diverting the flow of hot gases to ambient and to thereby draw ambient air through the vapor generator in the process. In one embodiment, a bistable ejector is adjustable between one position, in which the hot gases flow through the vapor generator, to another position wherein the gases are diverted away from the vapor generator. Another embodiment provides for a fixed valve ejector with a bias towards discharging to ambient, but with a fan on the downstream side of said vapor generator for overcoming this bias.

  19. Microwave-driven ultraviolet light sources

    DOE Patents [OSTI]

    Manos, Dennis M.; Diggs, Jessie; Ametepe, Joseph D.

    2002-01-29

    A microwave-driven ultraviolet (UV) light source is provided. The light source comprises an over-moded microwave cavity having at least one discharge bulb disposed within the microwave cavity. At least one magnetron probe is coupled directly to the microwave cavity.

  20. Non-Vapor Compression HVAC Technologies Report

    Broader source: Energy.gov [DOE]

    While vapor-compression technologies have served heating, ventilation, and air-conditioning (HVAC) needs very effectively, and have been the dominant HVAC technology for close to 100 years, the conventional refrigerants used in vapor-compression equipment contribute to global climate change when released to the atmosphere. The Building Technologies Office is evaluating low-global warming potential (GWP) alternatives to vapor-compression technologies.

  1. Coupling apparatus for a metal vapor laser

    DOE Patents [OSTI]

    Ball, D.G.; Miller, J.L.

    1993-02-23

    Coupling apparatus for a large bore metal vapor laser is disclosed. The coupling apparatus provides for coupling high voltage pulses (approximately 40 KV) to a metal vapor laser with a high repetition rate (approximately 5 KHz). The coupling apparatus utilizes existing thyratron circuits and provides suitable power input to a large bore metal vapor laser while maintaining satisfactory operating lifetimes for the existing thyratron circuits.

  2. Coupling apparatus for a metal vapor laser

    DOE Patents [OSTI]

    Ball, Don G.; Miller, John L.

    1993-01-01

    Coupling apparatus for a large bore metal vapor laser is disclosed. The coupling apparatus provides for coupling high voltage pulses (approximately 40 KV) to a metal vapor laser with a high repetition rate (approximately 5 KHz). The coupling apparatus utilizes existing thyratron circuits and provides suitable power input to a large bore metal vapor laser while maintaining satisfactory operating lifetimes for the existing thyratron circuits.

  3. Novel methods of copper vapor laser excitation

    SciTech Connect (OSTI)

    McColl, W.B.; Ching, H.; Bosch, R.; Brake, M.; Gilgenbach, R.

    1990-12-31

    Microwave and intense electron beam excitation of copper vapor are being investigated to be used in copper vapor lasers for isotope separation. Both methods use copper chloride vapor by heating copper chloride. Helium was used as the buffer gas at 2 to 100 torr. In the microwave system, intense copperlines at 510 nm and 578 nm were observed. Initial electron beam results indicate that light emission follows the beam current.

  4. ARM - Field Campaign - Water Vapor IOP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govCampaignsWater Vapor IOP ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : Water Vapor IOP 2000.09.18 - 2000.10.08 Lead Scientist : Henry Revercomb For data sets, see below. Abstract Scientific hypothesis: 1. Microwave radiometer (MWR) observations of the 22 GHz water vapor line can accurately constrain the total column amount of water vapor (assuming a calibration accuracy of 0.5 degC or better, which

  5. Vapor phase modifiers for oxidative coupling

    DOE Patents [OSTI]

    Warren, B.K.

    1991-12-17

    Volatilized metal compounds are described which are capable of retarding vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

  6. Oxycarbonitride phosphors and light emitting devices using the same

    DOE Patents [OSTI]

    Li, Yuanqiang; Romanelli, Michael D.; Tian, Yongchi

    2015-12-22

    A family of oxycarbonitride phosphor compositions is provided. Also provided are light emitting devices incorporating the oxycarbonitride phosphor compositions.

  7. G-Band Vapor Radiometer Precipitable Water Vapor (GVRPWV) Value-Added Product

    SciTech Connect (OSTI)

    Koontz, A; Cadeddu, M

    2012-12-05

    The G-Band Vapor Radiometer Precipitable Water Vapor (GVRPWV) value-added product (VAP) computes precipitable water vapor using neural network techniques from data measured by the GVR. The GVR reports time-series measurements of brightness temperatures for four channels located at 183.3 ± 1, 3, 7, and 14 GHz.

  8. Near real time vapor detection and enhancement using aerosol adsorption

    DOE Patents [OSTI]

    Novick, V.J.; Johnson, S.A.

    1999-08-03

    A vapor sample detection method is described where the vapor sample contains vapor and ambient air and surrounding natural background particles. The vapor sample detection method includes the steps of generating a supply of aerosol that have a particular effective median particle size, mixing the aerosol with the vapor sample forming aerosol and adsorbed vapor suspended in an air stream, impacting the suspended aerosol and adsorbed vapor upon a reflecting element, alternatively directing infrared light to the impacted aerosol and adsorbed vapor, detecting and analyzing the alternatively directed infrared light in essentially real time using a spectrometer and a microcomputer and identifying the vapor sample. 13 figs.

  9. Near real time vapor detection and enhancement using aerosol adsorption

    DOE Patents [OSTI]

    Novick, Vincent J.; Johnson, Stanley A.

    1999-01-01

    A vapor sample detection method where the vapor sample contains vapor and ambient air and surrounding natural background particles. The vapor sample detection method includes the steps of generating a supply of aerosol that have a particular effective median particle size, mixing the aerosol with the vapor sample forming aerosol and adsorbed vapor suspended in an air stream, impacting the suspended aerosol and adsorbed vapor upon a reflecting element, alternatively directing infrared light to the impacted aerosol and adsorbed vapor, detecting and analyzing the alternatively directed infrared light in essentially real time using a spectrometer and a microcomputer and identifying the vapor sample.

  10. Atomic vapor laser isotope separation

    SciTech Connect (OSTI)

    Stern, R.C.; Paisner, J.A.

    1985-11-08

    Atomic vapor laser isotope separation (AVLIS) is a general and powerful technique. A major present application to the enrichment of uranium for light-water power reactor fuel has been under development for over 10 years. In June 1985 the Department of Energy announced the selection of AVLIS as the technology to meet the nation's future need for the internationally competitive production of uranium separative work. The economic basis for this decision is considered, with an indicated of the constraints placed on the process figures of merit and the process laser system. We then trace an atom through a generic AVLIS separator and give examples of the physical steps encountered, the models used to describe the process physics, the fundamental parameters involved, and the role of diagnostic laser measurements.

  11. P-doping-free III-nitride high electron mobility light-emitting diodes and transistors

    SciTech Connect (OSTI)

    Li, Baikui; Tang, Xi; Chen, Kevin J.; Wang, Jiannong

    2014-07-21

    We report that a simple metal-AlGaN/GaN Schottky diode is capable of producing GaN band-edge ultraviolet emission at 3.4?eV at a small forward bias larger than ?2?V at room temperature. Based on the surface states distribution of AlGaN, a mature impact-ionization-induced Fermi-level de-pinning model is proposed to explain the underlying mechanism of the electroluminescence (EL) process. By experimenting with different Schottky metals, Ni/Au and Pt/Au, we demonstrated that this EL phenomenon is a universal property of metal-AlGaN/GaN Schottky diodes. Since this light-emitting Schottky diode shares the same active structure and fabrication processes as the AlGaN/GaN high electron mobility transistors, straight-forward and seamless integration of photonic and electronic functional devices has been demonstrated on doping-free III-nitride heterostructures. Using a semitransparent Schottky drain electrode, an AlGaN/GaN high electron mobility light-emitting transistor is demonstrated.

  12. Stacked vapor fed amtec modules

    DOE Patents [OSTI]

    Sievers, Robert K.

    1989-01-01

    The present invention pertains to a stacked AMTEC module. The invention includes a tubular member which has an interior. The member is comprised of a ion conductor that substantially conducts ions relative to electrons, preferably a beta"-alumina solid electrolyte, positioned about the interior. A porous electrode for conducting electrons and allowing sodium ions to pass therethrough, and wherein electrons and sodium ions recombine to form sodium is positioned about the beta"-alumina solid electrolyte. The electrode is operated at a temperature and a pressure that allows the recombined sodium to vaporize. Additionally, an outer current collector grid for distributing electrons throughout the porous electrode is positioned about and contacts the porous electrode. Also included in the invention is transporting means for transporting liquid sodium to the beta"-alumina solid electrolyte of the tubular member. A transition piece is positioned about the interior of the member and contacts the transporting means. The transition piece divides the member into a first cell and a second cell such that each first and second cell has a beta"-alumina solid electrolyte, a first and second porous electrode and a grid. The transition piece conducts electrons from the interior of the tubular member. There is supply means for supplying sodium to the transporting means. Preferably the supply means is a shell which surrounds the tubular member and is operated at a temperature such that the vaporized sodium condenses thereon. Returning means for returning the condensed sodium from the shell to the transporting means provides a continuous supply of liquid sodium to the transporting means. Also, there are first conducting means for conducting electric current from the transition piece which extends through the shell, and second conducting means for conducting electric current to the grid of the first cell which extends through the shell.

  13. High bandwidth vapor density diagnostic system

    DOE Patents [OSTI]

    Globig, Michael A.; Story, Thomas W.

    1992-01-01

    A high bandwidth vapor density diagnostic system for measuring the density of an atomic vapor during one or more photoionization events. The system translates the measurements from a low frequency region to a high frequency, relatively noise-free region in the spectrum to provide improved signal to noise ratio.

  14. Quantitative organic vapor-particle sampler

    DOE Patents [OSTI]

    Gundel, Lara; Daisey, Joan M.; Stevens, Robert K.

    1998-01-01

    A quantitative organic vapor-particle sampler for sampling semi-volatile organic gases and particulate components. A semi-volatile organic reversible gas sorbent macroreticular resin agglomerates of randomly packed microspheres with the continuous porous structure of particles ranging in size between 0.05-10 .mu.m for use in an integrated diffusion vapor-particle sampler.

  15. An application of oil vaporization evaluation methods

    SciTech Connect (OSTI)

    Fleckenstein, W.W. ); Bouck, L.S.; Hudgens, D. ); Querin, M. ); Williams, L. )

    1992-01-01

    This paper describes and quantifies the benefits of residual oil vaporization in an enhanced recovery gas injection project. Vaporized oil is recovered as natural gas liquid (NGL) when the injected gas is produced. In the reservoir application studied, 20% of the liquid hydrocarbons produced were being recovered as NGL. (VC)

  16. An application of oil vaporization evaluation methods

    SciTech Connect (OSTI)

    Fleckenstein, W.W.; Bouck, L.S.; Hudgens, D.; Querin, M.; Williams, L.

    1992-02-01

    This paper describes and quantifies the benefits of residual oil vaporization in an enhanced recovery gas injection project. Vaporized oil is recovered as natural gas liquid (NGL) when the injected gas is produced. In the reservoir application studied, 20% of the liquid hydrocarbons produced were being recovered as NGL. (VC)

  17. LNG fire and vapor control system technologies

    SciTech Connect (OSTI)

    Konzek, G.J.; Yasutake, K.M.; Franklin, A.L.

    1982-06-01

    This report provides a review of fire and vapor control practices used in the liquefied natural gas (LNG) industry. Specific objectives of this effort were to summarize the state-of-the-art of LNG fire and vapor control; define representative LNG facilities and their associated fire and vapor control systems; and develop an approach for a quantitative effectiveness evaluation of LNG fire and vapor control systems. In this report a brief summary of LNG physical properties is given. This is followed by a discussion of basic fire and vapor control design philosophy and detailed reviews of fire and vapor control practices. The operating characteristics and typical applications and application limitations of leak detectors, fire detectors, dikes, coatings, closed circuit television, communication systems, dry chemicals, water, high expansion foam, carbon dioxide and halogenated hydrocarbons are described. Summary descriptions of a representative LNG peakshaving facility and import terminal are included in this report together with typical fire and vapor control systems and their locations in these types of facilities. This state-of-the-art review identifies large differences in the application of fire and vapor control systems throughout the LNG industry.

  18. Tower Water-Vapor Mixing Ratio

    SciTech Connect (OSTI)

    Guastad, Krista; Riihimaki, Laura; none,

    2013-04-01

    The purpose of the Tower Water-Vapor Mixing Ratio (TWRMR) value-added product (VAP) is to calculate water-vapor mixing ratio at the 25-meter and 60-meter levels of the meteorological tower at the Southern Great Plains (SGP) Central Facility.

  19. Evaluating Global Aerosol Models and Aerosol and Water Vapor Properties Near Clouds

    SciTech Connect (OSTI)

    Richard A. Ferrare; David D. Turner

    2011-09-01

    Project goals: (1) Use the routine surface and airborne measurements at the ARM SGP site, and the routine surface measurements at the NSA site, to continue our evaluations of model aerosol simulations; (2) Determine the degree to which the Raman lidar measurements of water vapor and aerosol scattering and extinction can be used to remotely characterize the aerosol humidification factor; (3) Use the high temporal resolution CARL data to examine how aerosol properties vary near clouds; and (4) Use the high temporal resolution CARL and Atmospheric Emitted Radiance Interferometer (AERI) data to quantify entrainment in optically thin continental cumulus clouds.

  20. A micrometer-size movable light emitting area in a resonant tunneling light emitting diode

    SciTech Connect (OSTI)

    Pettinari, G., E-mail: giorgio.pettinari@cnr.it [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); National Research Council (CNR), Institute for Photonics and Nanotechnologies (IFN-CNR), Via Cineto Romano 42, 00156 Roma (Italy); Balakrishnan, N.; Makarovsky, O.; Campion, R. P.; Patan, A. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)] [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Polimeni, A.; Capizzi, M. [CNISM-Dipartimento di Fisica, Sapienza Universit di Roma, P.le A. Moro 2, 00185 Roma (Italy)] [CNISM-Dipartimento di Fisica, Sapienza Universit di Roma, P.le A. Moro 2, 00185 Roma (Italy)

    2013-12-09

    We report on the fabrication of a micrometer-size movable light emitting area in a GaAs/AlAs quantum well resonant tunneling p-i-n diode. The spatial position of the micrometer-size light emitting area shifts linearly with increasing applied bias, up to 30??m for a bias increment of 0.2?V. Also, the simultaneous resonant tunneling injection of both electrons and holes into the quantum well states is achieved at specific positions of the diode, thus resulting in a tenfold increase of the electroluminescence intensity.

  1. Tunable, superconducting, surface-emitting teraherz source

    DOE Patents [OSTI]

    Welp, Ulrich; Koshelev, Alexei E.; Gray, Kenneth E.; Kwok, Wai-Kwong; Vlasko-Vlasov, Vitalii

    2009-10-27

    A compact, solid-state THz source based on the driven Josephson vortex lattice in a highly anisotropic superconductor such as Bi.sub.2Sr.sub.2CaCu.sub.2O.sub.8 that allows cw emission at tunable frequency. A second order metallic Bragg grating is used to achieve impedance matching and to induce surface emission of THz-radiation from a Bi.sub.2Sr.sub.2CaCu.sub.2O.sub.8 sample. Steering of the emitted THz beam is accomplished by tuning the Josephson vortex spacing around the grating period using a superimposed magnetic control field.

  2. Tunable, superconducting, surface-emitting teraherz source

    DOE Patents [OSTI]

    Welp, Ulrich; Koshelev, Alexei E.; Gray, Kenneth E.; Kwok, Wai-Kwong; Vlasko-Vlasov, Vitalii

    2010-05-11

    A compact, solid-state THz source based on the driven Josephson vortex lattice in a highly anisotropic superconductor such as Bi.sub.2Sr.sub.2CaCu.sub.2O.sub.8 that allows cw emission at tunable frequency. A second order metallic Bragg grating is used to achieve impedance matching and to induce surface emission of THz-radiation from a Bi.sub.2Sr.sub.2CaCu.sub.2O.sub.8 sample. Steering of the emitted THz beam is accomplished by tuning the Josephson vortex spacing around the grating period using a superimposed magnetic control field.

  3. Long wavelength vertical cavity surface emitting laser

    DOE Patents [OSTI]

    Choquette, Kent D.; Klem, John F.

    2005-08-16

    Selectively oxidized vertical cavity lasers emitting near 1300 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave below, at and above room temperature. The lasers employ two n-type Al.sub.0.94 Ga.sub.0.06 As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the active region, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55.degree. C.

  4. Is N=8 Supergravity Ultraviolet Finite?

    SciTech Connect (OSTI)

    Bern, Zvi; Dixon, Lance J.; Roiban, Radu

    2006-11-15

    Conventional wisdom holds that no four-dimensional gravity field theory can be ultraviolet finite. This understanding is based mainly on power counting. Recent studies confirm that one-loop N = 8 supergravity amplitudes satisfy the so-called 'no-triangle hypothesis', which states that triangle and bubble integrals cancel from these amplitudes. A consequence of this hypothesis is that for any number of external legs, at one loop N = 8 supergravity and N = 4 super-Yang-Mills have identical superficial degrees of ultraviolet behavior in D dimensions. We describe how the unitarity method allows us to promote these one-loop cancellations to higher loops, suggesting that previous power counts were too conservative. We discuss higher-loop evidence suggesting that N = 8 supergravity has the same degree of divergence as N = 4 super-Yang-Mills theory and is ultraviolet finite in four dimensions. We comment on calculations needed to reinforce this proposal, which are feasible using the unitarity method.

  5. Ultraviolet stimulated electron source for use with low energy plasma instrument calibration

    SciTech Connect (OSTI)

    Henderson, Kevin; Harper, Ron; Funsten, Herb; MacDonald, Elizabeth [Space Science and Applications, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2012-07-15

    We have developed and demonstrated a versatile, compact electron source that can produce a mono-energetic electron beam up to 50 mm in diameter from 0.1 to 30 keV with an energy spread of <10 eV. By illuminating a metal cathode plate with a single near ultraviolet light emitting diode, a spatially uniform electron beam with 15% variation over 1 cm{sup 2} can be generated. A uniform electric field in front of the cathode surface accelerates the electrons into a beam with an angular divergence of <1 Degree-Sign at 1 keV. The beam intensity can be controlled from 10 to 10{sup 9} electrons cm{sup -2} s{sup -1}.

  6. Atmospheric emitted radiance interferometer (AERI): Status and the aerosol explanation for extra window region emissions

    SciTech Connect (OSTI)

    Revercomb, H.E.; Knuteson, R.O.; Best, F.A.; Dirkx, T.P.

    1996-04-01

    High spectral resolution observations of downwelling emission from 3 to 19 microns have been made by the Atmospheric Emitted Radiance Interferometer (AERI) Prototype at the Southern Great Plains (SGP) Cloud and Radiative Testbed (CART) site for over two years. The spectral data set from AERI provides a basis for improving clear sky radiative transfer; determining the radiative impact of clouds, including the derivation of cloud radiative properties; defining the influences of aerosols in the window regions; and retrieving boundary layer state properties, including temperature, water vapor, and other trace gases. The data stream of radiometrically and spectrally calibrated radiances is routinely provided by Pacific Northwest Laboratory (PNL) to those science teams requesting it, and further information on the instrument and data characteristics is available in the ARM Science Team proceedings for 1993 and 1994 and in several conference publications. This paper describes the AERI status, calibration, field experiment wit a new AERI-01 and schedule, window region emissions, and future AERI plans.

  7. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  8. Rotary Vapor Compression Cycle Technology: A Pathway to Ultra...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Rotary Vapor Compression Cycle Technology: A Pathway to Ultra-Efficient Air Conditioning, Heating and Refrigeration Rotary Vapor Compression Cycle Technology: A Pathway to...

  9. Mechanistic aspects of vapor phase lubrication of silicon. (Conference...

    Office of Scientific and Technical Information (OSTI)

    Mechanistic aspects of vapor phase lubrication of silicon. Citation Details In-Document Search Title: Mechanistic aspects of vapor phase lubrication of silicon. No abstract ...

  10. Monitoring of Precipitable Water Vapor and Cloud Liquid Path...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Monitoring of Precipitable Water Vapor and Cloud Liquid Path from Scanning Microwave ... used to measure atmospheric precipitable water vapor (PWV) and cloud liquid path (CLP). ...

  11. GPS Water Vapor Projects Within the ARM Southern Great Plains...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GPS Water Vapor Projects Within the ARM Southern Great Plains Region J. Braun, T. Van ... and characterize the four-dimensional distribution of water vapor within the atmosphere. ...

  12. Vertical Variability of Aerosols and Water Vapor Over the Southern...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vertical Variability of Aerosols and Water Vapor Over the Southern Great Plains R. A. ... Abstract We use Raman lidar profiles of water vapor mixing ratio, relative humidity, ...

  13. Raman Lidar Measurements of Aerosols and Water Vapor During the...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Raman Lidar Measurements of Aerosols and Water Vapor During the May 2003 Aerosol IOP R. A. ... Marina, California Abstract Raman lidar water vapor and aerosol extinction profiles ...

  14. Synthesis of platinum single-crystal nanoparticles in water vapor...

    Office of Scientific and Technical Information (OSTI)

    of platinum single-crystal nanoparticles in water vapor Citation Details In-Document Search Title: Synthesis of platinum single-crystal nanoparticles in water vapor Authors: ...

  15. After More Than 20 Years Operating, Hanford's Soil Vapor Extraction...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Wise, Juan Aguilar, Doug Rybarski, and Christina Agular. The soil vapor extraction trailer is shown near Hanfords Plutonium Finishing Plant. The soil vapor extraction...

  16. Process for vaporizing a liquid hydrocarbon fuel

    DOE Patents [OSTI]

    Szydlowski, Donald F. (East Hartford, CT); Kuzminskas, Vaidotas (Glastonbury, CT); Bittner, Joseph E. (East Hartford, CT)

    1981-01-01

    The object of the invention is to provide a process for vaporizing liquid hydrocarbon fuels efficiently and without the formation of carbon residue on the apparatus used. The process includes simultaneously passing the liquid fuel and an inert hot gas downwardly through a plurality of vertically spaed apart regions of high surface area packing material. The liquid thinly coats the packing surface, and the sensible heat of the hot gas vaporizes this coating of liquid. Unvaporized liquid passing through one region of packing is uniformly redistributed over the top surface of the next region until all fuel has been vaporized using only the sensible heat of the hot gas stream.

  17. Recovering hydrocarbons from hydrocarbon-containing vapors

    DOE Patents [OSTI]

    Mirza, Zia I.; Knell, Everett W.; Winter, Bruce L.

    1980-09-30

    Values are recovered from a hydrocarbon-containing vapor by contacting the vapor with quench liquid consisting essentially of hydrocarbons to form a condensate and a vapor residue, the condensate and quench fluid forming a combined liquid stream. The combined liquid stream is mixed with a viscosity-lowering liquid to form a mixed liquid having a viscosity lower than the viscosity of the combined liquid stream to permit easy handling of the combined liquid stream. The quench liquid is a cooled portion of the mixed liquid. Viscosity-lowering liquid is separated from a portion of the mixed liquid and cycled to form additional mixed liquid.

  18. Electron emitting filaments for electron discharge devices

    DOE Patents [OSTI]

    Leung, K.N.; Pincosy, P.A.; Ehlers, K.W.

    1983-06-10

    Electrons are copiously emitted by a device comprising a loop-shaped filament made of lanthanum hexaboride. The filament is directly heated by an electrical current produced along the filament by a power supply connected to the terminal legs of the filament. To produce a filament, a diamond saw or the like is used to cut a slice from a bar made of lanthanum hexaboride. The diamond saw is then used to cut the slice into the shape of a loop which may be generally rectangular, U-shaped, hairpin-shaped, zigzag-shaped, or generally circular. The filaments provide high electron emission at a relatively low operating temperature, such as 1600/sup 0/C. To achieve uniform heating, the filament is formed with a cross section which is tapered between the opposite ends of the filament to compensate for nonuniform current distribution along the filament due to the emission of electrons from the filament.

  19. Electron emitting filaments for electron discharge devices

    DOE Patents [OSTI]

    Leung, Ka-Ngo; Pincosy, Philip A.; Ehlers, Kenneth W.

    1988-01-01

    Electrons are copiously emitted by a device comprising a loop-shaped filament made of lanthanum hexaboride. The filament is directly heated by an electrical current produced along the filament by a power supply connected to the terminal legs of the filament. To produce a filament, a diamond saw or the like is used to cut a slice from a bar made of lanthanum hexaboride. The diamond saw is then used to cut the slice into the shape of a loop which may be generally rectangular, U-shaped, hairpin-shaped, zigzag-shaped, or generally circular. The filaments provide high electron emission at a relatively low operating temperature, such as 1600.degree. C. To achieve uniform heating, the filament is formed with a cross section which is tapered between the opposite ends of the filament to compensate for non-uniform current distribution along the filament due to the emission of electrons from the filament.

  20. Photonic crystal surface-emitting lasers

    DOE Patents [OSTI]

    Chua, Song Liang; Lu, Ling; Soljacic, Marin

    2015-06-23

    A photonic-crystal surface-emitting laser (PCSEL) includes a gain medium electromagnetically coupled to a photonic crystal whose energy band structure exhibits a Dirac cone of linear dispersion at the center of the photonic crystal's Brillouin zone. This Dirac cone's vertex is called a Dirac point; because it is at the Brillouin zone center, it is called an accidental Dirac point. Tuning the photonic crystal's band structure (e.g., by changing the photonic crystal's dimensions or refractive index) to exhibit an accidental Dirac point increases the photonic crystal's mode spacing by orders of magnitudes and reduces or eliminates the photonic crystal's distributed in-plane feedback. Thus, the photonic crystal can act as a resonator that supports single-mode output from the PCSEL over a larger area than is possible with conventional PCSELs, which have quadratic band edge dispersion. Because output power generally scales with output area, this increase in output area results in higher possible output powers.

  1. Energy Savings Estimates of Light Emitting Diodes | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Estimates of Light Emitting Diodes Energy Savings Estimates of Light Emitting Diodes This report is an analysis of niche markets and applications for light emitting diodes (LEDs), undertaken on behalf of the U.S. Department of Energy nichefinalreport_january2011.pdf (677.78 KB) More Documents & Publications LED ADOPTION REPORT Energy Savings Potential of Solid-State Lighting in General Illumination Applications - Report 2010 U.S. Lighting Market Characterization

  2. Probe for measurement of velocity and density of vapor in vapor plume

    DOE Patents [OSTI]

    Berzins, Leon V.; Bratton, Bradford A.; Fuhrman, Paul W.

    1997-01-01

    A probe which directs a light beam through a vapor plume in a first direction at a first angle ranging from greater than 0.degree. to less than 90.degree., reflecting the light beam back through the vapor plume at a 90.degree. angle, and then reflecting the light beam through the vapor plume a third time at a second angle equal to the first angle, using a series of mirrors to deflect the light beam while protecting the mirrors from the vapor plume with shields. The velocity, density, temperature and flow direction of the vapor plume may be determined by a comparison of the energy from a reference portion of the beam with the energy of the beam after it has passed through the vapor plume.

  3. Probe for measurement of velocity and density of vapor in vapor plume

    DOE Patents [OSTI]

    Berzins, L.V.; Bratton, B.A.; Fuhrman, P.W.

    1997-03-11

    A probe is disclosed which directs a light beam through a vapor plume in a first direction at a first angle ranging from greater than 0{degree} to less than 90{degree}, reflecting the light beam back through the vapor plume at a 90{degree} angle, and then reflecting the light beam through the vapor plume a third time at a second angle equal to the first angle, using a series of mirrors to deflect the light beam while protecting the mirrors from the vapor plume with shields. The velocity, density, temperature and flow direction of the vapor plume may be determined by a comparison of the energy from a reference portion of the beam with the energy of the beam after it has passed through the vapor plume. 10 figs.

  4. COMPREHENSIVE OBSERVATIONS OF THE ULTRAVIOLET SPECTRUM AND IMPROVED...

    Office of Scientific and Technical Information (OSTI)

    SPECTRUM AND IMPROVED ENERGY LEVELS FOR SINGLY IONIZED CHROMIUM (Cr II) Citation Details In-Document Search Title: COMPREHENSIVE OBSERVATIONS OF THE ULTRAVIOLET SPECTRUM AND ...

  5. Vacuum-ultraviolet photoreduction of graphene oxide: Electrical...

    Office of Scientific and Technical Information (OSTI)

    Vacuum-ultraviolet photoreduction of graphene oxide: Electrical conductivity of entirely reduced single sheets and reduced micro line patterns Citation Details In-Document Search...

  6. Vapor purification with self-cleaning filter

    DOE Patents [OSTI]

    Josephson, Gary B.; Heath, William O.; Aardahl, Christopher L.

    2003-12-09

    A vapor filtration device including a first electrode, a second electrode, and a filter between the first and second electrodes is disclosed. The filter is formed of dielectric material and the device is operated by applying a first electric potential between the electrodes to polarize the dielectric material such that upon passing a vapor stream through the filter, particles from the vapor stream are deposited onto the filter. After depositing the particles a second higher voltage is applied between the electrodes to form a nonthermal plasma around the filter to vaporize the collected particles thereby cleaning the filter. The filter can be a packed bed or serpentine filter mat, and an optional upstream corona wire can be utilized to charge airborne particles prior to their deposition on the filter.

  7. Perfluorocarbon vapor tagging of blasting cap detonators

    DOE Patents [OSTI]

    Dietz, Russell N.; Senum, Gunnar I.

    1981-01-01

    A plug for a blasting cap is made of an elastomer in which is dissolved a perfluorocarbon. The perfluorocarbon is released as a vapor into the ambient over a long period of time to serve as a detectable taggant.

  8. Chemical vapor infiltration using microwave energy

    DOE Patents [OSTI]

    Devlin, David J.; Currier, Robert P.; Laia, Jr., Joseph R.; Barbero, Robert S.

    1993-01-01

    A method for producing reinforced ceramic composite articles by means of chemical vapor infiltration and deposition in which an inverted temperature gradient is utilized. Microwave energy is the source of heat for the process.

  9. Perfluorocarbon vapor tagging of blasting cap detonators

    DOE Patents [OSTI]

    Dietz, R.N.; Senum, G.I.

    A plug for a blasting cap is made of an elastomer in which is dissolved a perfluorocarbon. The perfluorocarbon is released as a vapor into the ambient over a long period of time to serve as a detectable taggant.

  10. Test Procedures for Integrated Light-Emitting Diode Lamps; Final...

    Broader source: Energy.gov (indexed) [DOE]

    Test Procedures for Integrated Light-Emitting Diode Lamps - Final Rule (532.58 KB) More Documents & Publications ISSUANCE 2015-06-25: Energy Conservation Program: Test Procedures ...

  11. Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate

    Broader source: Energy.gov [DOE]

    This project is producing high-efficiency semipolar light-emitting diodes (LEDs) on low-defect bulk gallium nitride (GaN) substrates.

  12. Light emitting device comprising phosphorescent materials for white light generation

    DOE Patents [OSTI]

    Thompson, Mark E.; Dapkus, P. Daniel

    2014-07-22

    The present invention relates to phosphors for energy downconversion of high energy light to generate a broadband light spectrum, which emit light of different emission wavelengths.

  13. Energy Savings Estimates of Light Emitting Diodes in Niche Lighting...

    Broader source: Energy.gov (indexed) [DOE]

    Estimates of Light Emitting Diodes in Niche Lighting Applications Prepared for: Building Technologies Program Office of Energy Efficiency and Renewable Energy U.S. Department of ...

  14. Water vapor distribution in protoplanetary disks

    SciTech Connect (OSTI)

    Du, Fujun; Bergin, Edwin A.

    2014-09-01

    Water vapor has been detected in protoplanetary disks. In this work, we model the distribution of water vapor in protoplanetary disks with a thermo-chemical code. For a set of parameterized disk models, we calculate the distribution of dust temperature and radiation field of the disk with a Monte Carlo method, and then solve the gas temperature distribution and chemical composition. The radiative transfer includes detailed treatment of scattering by atomic hydrogen and absorption by water of Lyα photons, since the Lyα line dominates the UV spectrum of accreting young stars. In a fiducial model, we find that warm water vapor with temperature around 300 K is mainly distributed in a small and well-confined region in the inner disk. The inner boundary of the warm water region is where the shielding of UV field due to dust and water itself become significant. The outer boundary is where the dust temperature drops below the water condensation temperature. A more luminous central star leads to a more extended distribution of warm water vapor, while dust growth and settling tends to reduce the amount of warm water vapor. Based on typical assumptions regarding the elemental oxygen abundance and the water chemistry, the column density of warm water vapor can be as high as 10{sup 22} cm{sup –2}. A small amount of hot water vapor with temperature higher than ∼300 K exists in a more extended region in the upper atmosphere of the disk. Cold water vapor with temperature lower than 100 K is distributed over the entire disk, produced by photodesorption of the water ice.

  15. Quantitative IR Spectrum and Vibrational Assignments for Glycolaldehyde Vapor: Glycolaldehyde Measurements in Biomass Burning Plumes

    SciTech Connect (OSTI)

    Johnson, Timothy J.; Sams, Robert L.; Profeta, Luisa T.; Akagi, Sheryl; Burling, Ian R.; Yokelson, Robert J.; Williams, Stephen D.

    2013-04-15

    Glycolaldehyde (GA, 2-hydroxyethanal, C2H4O2) is a semi-volatile molecule of atmospheric importance, recently proposed as a precursor in the formation of aqueous-phase secondary organic aerosol (SOA). There are few methods to measure glycolaldehyde vapor, but infrared spectroscopy has been used successfully. Using vetted protocols we have completed the first assignment of all fundamental vibrational modes and derived quantitative IR absorption band strengths using both neat and pressure-broadened GA vapor. Even though GA is problematic due to its propensity to both dimerize and condense, our intensities agree well with the few previously published values. Using the reference ?10 band Q-branch at 860.51 cm-1, we have also determined GA mixing ratios in biomass burning plumes generated by field and laboratory burns of fuels from the southeastern and southwestern United States, including the first field measurements of glycolaldehyde in smoke. The GA emission factors were anti-correlated with modified combustion efficiency confirming release of GA from smoldering combustion. The GA emission factors (g of GA emitted per kg dry biomass burned on a dry mass basis) had a low dependence on fuel type consistent with the production mechanism being pyrolysis of cellulose. GA was emitted at 0.23 0.13% of CO from field fires and we calculate that it accounts for ~18% of the aqueous-phase SOA precursors that we were able to measure.

  16. INTENSITY ENHANCEMENT OF OVI ULTRAVIOLET EMISSION LINES IN SOLAR SPECTRA DUE TO OPACITY

    SciTech Connect (OSTI)

    Keenan, F. P.; Mathioudakis, M.; Doyle, J. G.; Madjarska, M. S.; Rose, S. J.; Bowler, L. A.; Britton, J.; McCrink, L.

    2014-04-01

    Opacity is a property of many plasmas. It is normally expected that if an emission line in a plasma becomes optically thick, then its intensity ratio to that of another transition that remains optically thin should decrease. However, radiative transfer calculations undertaken both by ourselves and others predict that under certain conditions the intensity ratio of an optically thick to an optically thin line can show an increase over the optically thin value, indicating an enhancement in the former. These conditions include the geometry of the emitting plasma and its orientation to the observer. A similar effect can take place between lines of differing optical depths. While previous observational studies have focused on stellar point sources, here we investigate the spatially resolved solar atmosphere using measurements of the I(1032 )/I(1038 ) intensity ratio of OVI in several regions obtained with the Solar Ultraviolet Measurements of Emitted Radiation instrument on board the Solar and Heliospheric Observatory satellite. We find several I(1032 )/I(1038 ) ratios observed on the disk to be significantly larger than the optically thin value of 2.0, providing the first detection (to our knowledge) of intensity enhancement in the ratio arising from opacity effects in the solar atmosphere. The agreement between observation and theory is excellent and confirms that the OVI emission originates from a slab-like geometry in the solar atmosphere, rather than from cylindrical structures.

  17. Optical coatings of variable refractive index and high laser-resistance from physical-vapor-deposited perfluorinated amorphous polymer

    DOE Patents [OSTI]

    Chow, Robert; Loomis, Gary E.; Thomas, Ian M.

    1999-01-01

    Variable index optical single-layers, optical multilayer, and laser-resistant coatings were made from a perfluorinated amorphous polymer material by physical vapor deposition. This was accomplished by physically vapor depositing a polymer material, such as bulk Teflon AF2400, for example, to form thin layers that have a very low refractive index (.about.1.10-1.31) and are highly transparent from the ultra-violet through the near infrared regime, and maintain the low refractive index of the bulk material. The refractive index can be varied by simply varying one process parameter, either the deposition rate or the substrate temperature. The thus forming coatings may be utilized in anti-reflectors and graded anti-reflection coatings, as well as in optical layers for laser-resistant coatings at optical wavelengths of less than about 2000 nm.

  18. Optical coatings of variable refractive index and high laser-resistance from physical-vapor-deposited perfluorinated amorphous polymer

    DOE Patents [OSTI]

    Chow, R.; Loomis, G.E.; Thomas, I.M.

    1999-03-16

    Variable index optical single-layers, optical multilayer, and laser-resistant coatings were made from a perfluorinated amorphous polymer material by physical vapor deposition. This was accomplished by physically vapor depositing a polymer material, such as bulk Teflon AF2400, for example, to form thin layers that have a very low refractive index (ca. 1.10--1.31) and are highly transparent from the ultra-violet through the near infrared regime, and maintain the low refractive index of the bulk material. The refractive index can be varied by simply varying one process parameter, either the deposition rate or the substrate temperature. The thus forming coatings may be utilized in anti-reflectors and graded anti-reflection coatings, as well as in optical layers for laser-resistant coatings at optical wavelengths of less than about 2000 nm. 2 figs.

  19. Effects of emitted electron temperature on the plasma sheath

    SciTech Connect (OSTI)

    Sheehan, J. P.; Kaganovich, I. D.; Wang, H.; Raitses, Y.; Sydorenko, D.; Hershkowitz, N.

    2014-06-15

    It has long been known that electron emission from a surface significantly affects the sheath surrounding that surface. Typical fluid theory of a planar sheath with emitted electrons assumes that the plasma electrons follow the Boltzmann relation and the emitted electrons are emitted with zero energy and predicts a potential drop of 1.03T{sub e}/e across the sheath in the floating condition. By considering the modified velocity distribution function caused by plasma electrons lost to the wall and the half-Maxwellian distribution of the emitted electrons, it is shown that ratio of plasma electron temperature to emitted electron temperature significantly affects the sheath potential when the plasma electron temperature is within an order of magnitude of the emitted electron temperature. When the plasma electron temperature equals the emitted electron temperature the emissive sheath potential goes to zero. One dimensional particle-in-cell simulations corroborate the predictions made by this theory. The effects of the addition of a monoenergetic electron beam to the Maxwellian plasma electrons were explored, showing that the emissive sheath potential is close to the beam energy only when the emitted electron flux is less than the beam flux.

  20. Light emitting elastomer compositions and method of use

    DOE Patents [OSTI]

    McElhanon, James R.; Zifer, Thomas; Whinnery, LeRoy L.

    2004-11-23

    There is provided a light emitting device comprising a plurality of triboluminescent particles dispersed throughout an elastomeric body and activated by deforming the body in order to transfer mechanical energy to some portion of the particles. The light emitted by these mechanically excited particles is collected and directed into a light conduit and transmitted to a detector/indicator means.

  1. INTERACTIVE: How Much Carbon Do Countries Emit? | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    INTERACTIVE: How Much Carbon Do Countries Emit? INTERACTIVE: How Much Carbon Do Countries Emit? This interactive map is not viewable in your browser. Please view it in a modern browser. If you are using IE9, you can also view the interactive here

  2. Efficient semiconductor light-emitting device and method

    DOE Patents [OSTI]

    Choquette, Kent D.; Lear, Kevin L.; Schneider, Jr., Richard P.

    1996-01-01

    A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

  3. Efficient semiconductor light-emitting device and method

    DOE Patents [OSTI]

    Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

    1996-02-20

    A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

  4. Ultraviolet laser beam monitor using radiation responsive crystals

    DOE Patents [OSTI]

    McCann, Michael P.; Chen, Chung H.

    1988-01-01

    An apparatus and method for monitoring an ultraviolet laser beam includes disposing in the path of an ultraviolet laser beam a substantially transparent crystal that will produce a color pattern in response to ultraviolet radiation. The crystal is exposed to the ultraviolet laser beam and a color pattern is produced within the crystal corresponding to the laser beam intensity distribution therein. The crystal is then exposed to visible light, and the color pattern is observed by means of the visible light to determine the characteristics of the laser beam that passed through crystal. In this manner, a perpendicular cross sectional intensity profile and a longitudinal intensity profile of the ultraviolet laser beam may be determined. The observation of the color pattern may be made with forward or back scattered light and may be made with the naked eye or with optical systems such as microscopes and television cameras.

  5. Condenser for ring-field deep-ultraviolet and extreme-ultraviolet lithography

    DOE Patents [OSTI]

    Chapman, Henry N.; Nugent, Keith A.

    2001-01-01

    A condenser for use with a ring-field deep ultraviolet or extreme ultraviolet lithography system. A condenser includes a ripple-plate mirror which is illuminated by a collimated beam at grazing incidence. The ripple plate comprises a plate mirror into which is formed a series of channels along an axis of the mirror to produce a series of concave surfaces in an undulating pattern. Light incident along the channels of the mirror is reflected onto a series of cones. The distribution of slopes on the ripple plate leads to a distribution of angles of reflection of the incident beam. This distribution has the form of an arc, with the extremes of the arc given by the greatest slope in the ripple plate. An imaging mirror focuses this distribution to a ring-field arc at the mask plane.

  6. Condenser for ring-field deep ultraviolet and extreme ultraviolet lithography

    DOE Patents [OSTI]

    Chapman, Henry N.; Nugent, Keith A.

    2002-01-01

    A condenser for use with a ring-field deep ultraviolet or extreme ultraviolet lithography system. A condenser includes a ripple-plate mirror which is illuminated by a collimated or converging beam at grazing incidence. The ripple plate comprises a flat or curved plate mirror into which is formed a series of channels along an axis of the mirror to produce a series of concave surfaces in an undulating pattern. Light incident along the channels of the mirror is reflected onto a series of cones. The distribution of slopes on the ripple plate leads to a distribution of angles of reflection of the incident beam. This distribution has the form of an arc, with the extremes of the arc given by the greatest slope in the ripple plate. An imaging mirror focuses this distribution to a ring-field arc at the mask plane.

  7. Vaporized alcohol fuel boosts engine efficiency

    SciTech Connect (OSTI)

    Hardenburg, H.O.; Bergmann, H.K.; Metsch, H.I.; Schaefer, A.J.

    1983-02-01

    An effort is being made at Daimler-Benz AG to utilize the special characteristics of vaporized methanol and ethanol in an alcohol-gas spark-ignited engine. Describes laboratory testing which demonstrates that waste heat recovery and very lean air/fuel mixtures improve the efficiency and economy of a spark-ignition engine running on alcohol vapors. Presents graph comparing performance and torque of the alcohol-gas and diesel engines. Finds that the fuel consumption of the methanol-fueled version approaches that of a diesel engine, with other advantages including low engine noise, good acceleration, and favorable exhaust emissions.

  8. Diode pumped alkali vapor fiber laser

    DOE Patents [OSTI]

    Payne, Stephen A.; Beach, Raymond J.; Dawson, Jay W.; Krupke, William F.

    2007-10-23

    A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid core fibers to be circumvented. Alkali vapor is introduced into the center hole of a photonic-band-gap fiber, which can then be pumped with light from a pump laser and operated as an oscillator with a seed beam, or can be configured as an amplifier.

  9. Diode pumped alkali vapor fiber laser

    DOE Patents [OSTI]

    Payne, Stephen A.; Beach, Raymond J.; Dawson, Jay W.; Krupke, William F.

    2006-07-26

    A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid core fibers to be circumvented. Alkali vapor is introduced into the center hole of a photonic-band-gap fiber, which can then be pumped with light from a pump laser and operated as an oscillator with a seed beam, or can be configured as an amplifier.

  10. Thermal electric vapor trap arrangement and method

    DOE Patents [OSTI]

    Alger, Terry (Tracy, CA)

    1988-01-01

    A technique for trapping vapor within a section of a tube is disclosed herein. This technique utilizes a conventional, readily providable thermal electric device having a hot side and a cold side and means for powering the device to accomplish this. The cold side of this device is positioned sufficiently close to a predetermined section of the tube and is made sufficiently cold so that any condensable vapor passing through the predetermined tube section is condensed and trapped, preferably within the predetermined tube section itself.

  11. Thermal electric vapor trap arrangement and method

    DOE Patents [OSTI]

    Alger, T.

    1988-03-15

    A technique for trapping vapor within a section of a tube is disclosed herein. This technique utilizes a conventional, readily providable thermal electric device having a hot side and a cold side and means for powering the device to accomplish this. The cold side of this device is positioned sufficiently close to a predetermined section of the tube and is made sufficiently cold so that any condensable vapor passing through the predetermined tube section is condensed and trapped, preferably within the predetermined tube section itself. 4 figs.

  12. Method and Apparatus for Concentrating Vapors for Analysis

    DOE Patents [OSTI]

    Grate, Jay W.; Baldwin, David L.; Anheier, Jr., Norman C.

    2008-10-07

    An apparatus and method are disclosed for pre-concentrating gaseous vapors for analysis. The invention finds application in conjunction with, e.g., analytical instruments where low detection limits for gaseous vapors are desirable. Vapors sorbed and concentrated within the bed of the apparatus can be thermally desorbed achieving at least partial separation of vapor mixtures. The apparatus is suitable, e.g., for preconcentration and sample injection, and provides greater resolution of peaks for vapors within vapor mixtures, yielding detection levels that are 10-10,000 times better than for direct sampling and analysis systems. Features are particularly useful for continuous unattended monitoring applications.

  13. Biological applications of ultraviolet free-electron lasers

    SciTech Connect (OSTI)

    Sutherland, J.C.

    1997-10-01

    This review examines the possibilities for biological research using the three ultraviolet free-electron lasers that are nearing operational status in the US. The projected operating characteristics of major interest in biological research of the free-electron lasers at Brookhaven National Laboratory, the Thomas Jefferson National Accelerator Facility, and Duke University are presented. Experimental applications in the areas of far- and vacuum ultraviolet photophysics and photochemistry, structural biology, environmental photobiology, and medical research are discussed and the prospects for advances in these areas, based upon the characteristics of the new ultraviolet free-electron lasers, are evaluated.

  14. Effect of heterostructure design on carrier injection and emission characteristics of 295?nm light emitting diodes

    SciTech Connect (OSTI)

    Mehnke, Frank Kuhn, Christian; Stellmach, Joachim; Rothe, Mark-Antonius; Reich, Christoph; Ledentsov, Nikolay; Pristovsek, Markus; Wernicke, Tim; Kolbe, Tim; Lobo-Ploch, Neysha; Rass, Jens; Kneissl, Michael

    2015-05-21

    The effects of the heterostructure design on the injection efficiency and external quantum efficiency of ultraviolet (UV)-B light emitting diodes (LEDs) have been investigated. It was found that the functionality of the Al{sub x}Ga{sub 1?x}N:Mg electron blocking layer is strongly influenced by its aluminum mole fraction x and its magnesium doping profile. By comparing LED electroluminescence, quantum well photoluminescence, and simulations of LED heterostructure, we were able to differentiate the contributions of injection efficiency and internal quantum efficiency to the external quantum efficiency of UV LEDs. For the optimized heterostructure using an Al{sub 0.7}Ga{sub 0.3}N:Mg electron blocking layer with a Mg to group III ratio of 4% in the gas phase the electron leakage currents are suppressed without blocking the injection of holes into the multiple quantum well active region. Flip chip mounted LED chips have been processed achieving a maximum output power of 3.5 mW at 290?mA and a peak external quantum efficiency of 0.54% at 30?mA.

  15. Vapor pressures of the polychlorinated naphthalenes

    SciTech Connect (OSTI)

    Lei, Y.D.; Shiu, W.Y.; Wania, F.

    1999-05-01

    The vapor pressures of the supercooled liquid P{sub L} for 17 polychlorinated naphthalene congeners were determined as a function of temperature with a gas chromatographic retention time technique. The method was calibrated with vapor pressure data for polychlorinated biphenyls (PCBs) which had been measured by other techniques. These data were employed to predict temperature-dependent vapor pressures for all polychlorinated naphthalenes (PCNs) from a regression with published retention time indices. Enthalpies of vaporization {Delta}{sub VAP}H and activity coefficients in 1-octanol were calculated for the PCNs and compared with those for polychlorinated biphenyls. Data analysis suggests that the dependence of P{sub L} and {Delta}{sub VAP}H on molecular size, as well as the partitioning behavior into 1-octanol of the PCNs, is very similar to that of coplanar PCBs, i.e., those congeners with no or only one chlorine substitution in the ortho positions. The affinity of these chemicals to 1-octanol increases with the degree of chlorination.

  16. Advancing Explosives Detection Capabilities: Vapor Detection

    SciTech Connect (OSTI)

    Atkinson, David

    2012-10-15

    A new, PNNL-developed method provides direct, real-time detection of trace amounts of explosives such as RDX, PETN and C-4. The method selectively ionizes a sample before passing the sample through a mass spectrometer to detect explosive vapors. The method could be used at airports to improve aviation security.

  17. Chemical vapor deposition of mullite coatings

    DOE Patents [OSTI]

    Sarin, Vinod (Lexington, MA); Mulpuri, Rao (Boston, MA)

    1998-01-01

    This invention is directed to the creation of crystalline mullite coatings having uniform microstructure by chemical vapor deposition (CVD). The process comprises the steps of establishing a flow of reactants which will yield mullite in a CVD reactor, and depositing a crystalline coating from the reactant flow. The process will yield crystalline coatings which are dense and of uniform thickness.

  18. Advancing Explosives Detection Capabilities: Vapor Detection

    ScienceCinema (OSTI)

    Atkinson, David

    2014-07-24

    A new, PNNL-developed method provides direct, real-time detection of trace amounts of explosives such as RDX, PETN and C-4. The method selectively ionizes a sample before passing the sample through a mass spectrometer to detect explosive vapors. The method could be used at airports to improve aviation security.

  19. Demonstration Assessment of Light Emitting Diode (LED) Street...

    Energy Savers [EERE]

    Demonstration Assessment of Light Emitting Diode (LED) Street Lighting Host Site: City of Oakland, California Final Report prepared in support of the U.S. DOE Solid-State Lighting ...

  20. Demonstration Assessment of Light-Emitting Diode (LED) Roadway Lighting

    SciTech Connect (OSTI)

    Kinzey, B. R.; Myer, M. A.

    2009-11-01

    A U.S. Department of Energy Solid-State Lighting Gateway Report on a Demonstration Assessment of Light-Emitting Diode (LED) Roadway Lighting in Lija Loop, Portland, Oregon.

  1. Nanoscale engineering boosts performance of quantum dot light emitting

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    diodes Quantum dot light emitting diodes Nanoscale engineering boosts performance of quantum dot light emitting diodes Quantum dots are nano-sized semiconductor particles whose emission color can be tuned by simply changing their dimensions. October 25, 2013 Postdoctoral researcher Young-Shin Park characterizing emission spectra of LEDs in the Los Alamos National Laboratory optical laboratory. Postdoctoral researcher Young-Shin Park characterizing emission spectra of LEDs in the Los Alamos

  2. Organic light emitting device structure for obtaining chromaticity stability

    DOE Patents [OSTI]

    Tung, Yeh-Jiun; Ngo, Tan

    2007-05-01

    The present invention relates to organic light emitting devices (OLEDs). The devices of the present invention are efficient white or multicolored phosphorescent OLEDs which have a high color stability over a wide range of luminances. The devices of the present invention comprise an emissive region having at least two emissive layers, with each emissive layer comprising a different host and emissive dopant, wherein at least one of the emissive dopants emits by phosphorescence.

  3. Organic light emitting device structures for obtaining chromaticity stability

    DOE Patents [OSTI]

    Tung, Yeh-Jiun; Lu, Michael; Kwong, Raymond C.

    2005-04-26

    The present invention relates to organic light emitting devices (OLEDs). The devices of the present invention are efficient white or multicolored phosphorescent OLEDs which have a high color stability over a wide range of luminances. The devices of the present invention comprise an emissive region having at least two emissive layers, with each emissive layer comprising a different host and emissive dopant, wherein at least one of the emissive dopants emits by phosphorescence.

  4. Demonstration Assessment of Light-Emitting Diode Parking Structure Lighting

    Office of Scientific and Technical Information (OSTI)

    at U.S. Department of Labor Headquarters (Technical Report) | SciTech Connect Demonstration Assessment of Light-Emitting Diode Parking Structure Lighting at U.S. Department of Labor Headquarters Citation Details In-Document Search Title: Demonstration Assessment of Light-Emitting Diode Parking Structure Lighting at U.S. Department of Labor Headquarters This report documents a solid-state lighting (SSL) technology demonstration at the parking structure of the U.S. Department of Labor (DOL)

  5. Vapor Pressure and Molecular Composition of Vapors of the RbF...

    Office of Scientific and Technical Information (OSTI)

    in the vapor phase of the respective systems. Farther work on the NaF-ZrFsub 4 system points to the existence of the gaseous complex NaZrsub 2Fsub 9 rather than NaZrFsub ...

  6. Laser Makes New Shade of Ultraviolet (COSMIC Log on MSNBC.com...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    cosmiclog.nbcnews.comnews201012285725603-laser-makes-new-shade-of-ultraviolet Submitted: Wednesday, December 29...

  7. IMPROVED MAGNUS' FORM OF SATURATION VAPOR PRESSURE Oleg A. Alduchov...

    Office of Scientific and Technical Information (OSTI)

    We will show that two of the new formulations of vapor pressure over water and ice are ... The most precise formulation of vapor pressure over a plane surface of water was given by ...

  8. ARM: Microwave Water Radiometer (MWR): water liq. and vapor along...

    Office of Scientific and Technical Information (OSTI)

    Microwave Water Radiometer (MWR): water liq. and vapor along line of sight (LOS) path Title: ARM: Microwave Water Radiometer (MWR): water liq. and vapor along line of sight (LOS) ...

  9. Moisture Durability of Vapor Permeable Insulating Sheathing (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-10-01

    In this project, Building America team Building Science Corporation researched some of the ramifications of using exterior, vapor permeable insulation on retrofit walls with vapor permeable cavity insulation. Retrofit strategies are a key factor in reducing exterior building stock consumption.

  10. 2014-05-16 Issuance: Test Procedures for Integrated Light-Emitting...

    Broader source: Energy.gov (indexed) [DOE]

    notice of proposed rulemaking regarding test procedures for integrated light-emitting ... to this document. 2014-05-16 Issuance: Test Procedures for Integrated Light-Emitting ...

  11. 2014-06-18 Issuance: Test Procedure for Integrated Light-Emitting...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    18 Issuance: Test Procedure for Integrated Light-Emitting Diode Lamps; Supplemental Notice of Proposed Rulemaking 2014-06-18 Issuance: Test Procedure for Integrated Light-Emitting ...

  12. Double Beta Decay in Xenon-136: Measuring the Neutrino-Emitting...

    Office of Scientific and Technical Information (OSTI)

    Title: Double Beta Decay in Xenon-136: Measuring the Neutrino-Emitting Mode and Searching for Majoron-Emitting Modes Authors: Herrin, Steven ; Stanford U., Phys. Dept. SLAC ...

  13. Ultraviolet Thomson scattering measurements of the electron feature...

    Office of Scientific and Technical Information (OSTI)

    Title: Ultraviolet Thomson scattering measurements of the electron feature with an energetic 263 nm probe Authors: Ross, J S ; Divol, L ; Sorce, C ; Froula, D H ; Glenzer, S H ...

  14. Color tuning of light-emitting-diodes by modulating the concentration of red-emitting silicon nanocrystal phosphors

    SciTech Connect (OSTI)

    Barillaro, G. Strambini, L. M.

    2014-03-03

    Luminescent forms of nanostructured silicon have received significant attention in the context of quantum-confined light-emitting devices thanks to size-tunable emission wavelength and high-intensity photoluminescence, as well as natural abundance, low cost, and non-toxicity. Here, we show that red-emitting silicon nanocrystal (SiN) phosphors, obtained by electrochemical erosion of silicon, allow for effectively tuning the color of commercial light-emitting-diodes (LEDs) from blue to violet, magenta, and red, by coating the LED with polydimethylsiloxane encapsulating different SiN concentrations. High reliability of the tuning process, with respect to SiN fabrication and concentration, and excellent stability of the tuning color, with respect to LED bias current, is demonstrated through simultaneous electrical/optical characterization of SiN-modified commercial LEDs, thus envisaging exciting perspectives for silicon nanocrystals in the field of light-emitting applications.

  15. Lamp for generating high power ultraviolet radiation

    DOE Patents [OSTI]

    Morgan, Gary L.; Potter, James M.

    2001-01-01

    The apparatus is a gas filled ultraviolet generating lamp for use as a liquid purifier. The lamp is powred by high voltage AC, but has no metallic electrodes within or in contact with the gas enclosure which is constructed as two concentric quartz cylinders sealed together at their ends with the gas fill between the cylinders. Cooling liquid is pumped through the volume inside the inner quartz cylinder where an electrically conductive pipe spaced from the inner cylinder is used to supply the cooling liquid and act as the high voltage electrode. The gas enclosure is enclosed within but spaced from a metal housing which is connected to operate as the ground electrode of the circuit and through which the treated fluid flows. Thus, the electrical circuit is from the central pipe, and through the cooling liquid, the gas enclosure, the treated liquid on the outside of the outer quartz cylinder, and to the housing. The high voltage electrode is electrically isolated from the source of cooling liquid by a length of insulated hose which also supplies the cooling liquid.

  16. Quantum-dot light-emitting diodes utilizing CdSe/ZnS nanocrystals embedded in TiO{sub 2} thin film

    SciTech Connect (OSTI)

    Kang, Seung-Hee; Kumar, Ch. Kiran; Kim, Eui-Tae; Lee, Zonghoon; Kim, Kyung-Hyun; Huh, Chul

    2008-11-10

    Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe/ZnS nanocrystals in TiO{sub 2} thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO{sub 2}/QDs/p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO{sub 2}/QDs/Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

  17. A solar type II radio burst from coronal mass ejection-coronal ray interaction: Simultaneous radio and extreme ultraviolet imaging

    SciTech Connect (OSTI)

    Chen, Yao; Du, Guohui; Feng, Shiwei; Kong, Xiangliang; Wang, Bing; Feng, Li; Guo, Fan; Li, Gang

    2014-05-20

    Simultaneous radio and extreme ultraviolet (EUV)/white-light imaging data are examined for a solar type II radio burst occurring on 2010 March 18 to deduce its source location. Using a bow-shock model, we reconstruct the three-dimensional EUV wave front (presumably the type-II-emitting shock) based on the imaging data of the two Solar TErrestrial RElations Observatory spacecraft. It is then combined with the Nanay radio imaging data to infer the three-dimensional position of the type II source. It is found that the type II source coincides with the interface between the coronal mass ejection (CME) EUV wave front and a nearby coronal ray structure, providing evidence that the type II emission is physically related to the CME-ray interaction. This result, consistent with those of previous studies, is based on simultaneous radio and EUV imaging data for the first time.

  18. Extended-range grazing-incidence spectrometer for high-resolution extreme ultraviolet measurements on an electron beam ion trap

    SciTech Connect (OSTI)

    Beiersdorfer, P.; Magee, E. W.; Brown, G. V.; Träbert, E.; Widmann, K.; Hell, N.

    2014-11-15

    A high-resolution grazing-incidence grating spectrometer has been implemented on the Livermore electron beam ion traps for performing very high-resolution measurements in the soft x-ray and extreme ultraviolet region spanning from below 10 Å to above 300 Å. The instrument operates without an entrance slit and focuses the light emitted by highly charged ions located in the roughly 50 μm wide electron beam onto a cryogenically cooled back-illuminated charge-coupled device detector. The measured line widths are below 0.025 Å above 100 Å, and the resolving power appears to be limited by the source size and Doppler broadening of the trapped ions. Comparisons with spectra obtained with existing grating spectrometers show an order of magnitude improvement in spectral resolution.

  19. Light-emitting device with organic electroluminescent material and photoluminescent materials

    DOE Patents [OSTI]

    McNulty, Thomas Francis; Duggal, Anil Raj; Turner, Larry Gene; Shiang, Joseph John

    2005-06-07

    A light-emitting device comprises a light-emitting member, which comprises two electrodes and an organic electroluminescent material disposed between the electrodes, and at least one organic photoluminescent ("PL") material. The light-emitting member emits light having a first spectrum in response to a voltage applied across the two electrodes. The organic PL material absorbs a portion of the light emitted by the light-emitting member and emits light having second spectrum different than the first spectrum. The light-emitting device can include an inorganic PL material that absorbs another portion of the light emitted from the light-emitting member and emits light having a third spectrum different than both the first and the second spectra.

  20. Capillary - Discharge Based Hand-Held Detector For Chemical Vapor Monitoring

    DOE Patents [OSTI]

    Duan, Yixiang

    2005-05-31

    A handheld/portable detector for chemical vapor monitoring includes a housing and a discharge chamber that is established therein. The plasma discharge has a relatively small volume, e.g., in the micro-liter range. A first electrode and a second electrode are disposed within the discharge chamber and a discharge gap is established therebetween. A sample gas tube is in fluid communication with the discharge chamber and provides a sample gas to the discharge chamber. Also, a plasma gas tube is in fluid communication with the discharge chamber and provides a plasma gas thereto. Accordingly, the plasma gas can be used to maintain microplasma discharge between the electrodes and the sample gas can be introduced into the microplasma discharge. A spectrometer optically connected to the handheld/portable detector is used to measure the radiation emitted by the sample gas when subjected to the microplasma discharge.

  1. Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3??m

    SciTech Connect (OSTI)

    Goldmann, Elias Jahnke, Frank; Paul, Matthias; Kettler, Jan; Jetter, Michael; Michler, Peter; Krause, Florian F.; Mller, Knut; Mehrtens, Thorsten; Rosenauer, Andreas

    2014-10-13

    A combined experimental and theoretical study of InGaAs/GaAs quantum dots (QDs) emitting at 1.3??m under the influence of a strain-reducing InGaAs quantum well is presented. We demonstrate a red shift of 2040?nm observed in photoluminescence spectra due to the quantum well. The InGaAs/GaAs QDs grown by metal organic vapor phase epitaxy show a bimodal height distribution (1?nm and 5?nm) and indium concentrations up to 90%. The emission properties are explained with combined tight-binding and configuration-interaction calculations of the emission wavelengths in conjunction with high-resolution scanning transmission electron microscopy investigations of QD geometry and indium concentrations in the QDs, which directly enter the calculations. QD geometries and concentration gradients representative for the ensemble are identified.

  2. Metal vapor laser including hot electrodes and integral wick

    DOE Patents [OSTI]

    Ault, E.R.; Alger, T.W.

    1995-03-07

    A metal vapor laser, specifically one utilizing copper vapor, is disclosed herein. This laser utilizes a plasma tube assembly including a thermally insulated plasma tube containing a specific metal, e.g., copper, and a buffer gas therein. The laser also utilizes means including hot electrodes located at opposite ends of the plasma tube for electrically exciting the metal vapor and heating its interior to a sufficiently high temperature to cause the metal contained therein to vaporize and for subjecting the vapor to an electrical discharge excitation in order to lase. The laser also utilizes external wicking arrangements, that is, wicking arrangements located outside the plasma tube. 5 figs.

  3. Metal vapor laser including hot electrodes and integral wick

    DOE Patents [OSTI]

    Ault, Earl R.; Alger, Terry W.

    1995-01-01

    A metal vapor laser, specifically one utilizing copper vapor, is disclosed herein. This laser utilizes a plasma tube assembly including a thermally insulated plasma tube containing a specific metal, e.g., copper, and a buffer gas therein. The laser also utilizes means including hot electrodes located at opposite ends of the plasma tube for electrically exciting the metal vapor and heating its interior to a sufficiently high temperature to cause the metal contained therein to vaporize and for subjecting the vapor to an electrical discharge excitation in order to lase. The laser also utilizes external wicking arrangements, that is, wicking arrangements located outside the plasma tube.

  4. Apparatus for isotopic alteration of mercury vapor

    DOE Patents [OSTI]

    Grossman, Mark W.; George, William A.; Marcucci, Rudolph V.

    1988-01-01

    An apparatus for enriching the isotopic Hg content of mercury is provided. The apparatus includes a reactor, a low pressure electric discharge lamp containing a fill including mercury and an inert gas. A filter is arranged concentrically around the lamp. In a preferred embodiment, constant mercury pressure is maintained in the filter by means of a water-cooled tube that depends from it, the tube having a drop of mercury disposed in it. The reactor is arranged around the filter, whereby radiation from said lamp passes through the filter and into said reactor. The lamp, the filter and the reactor are formed of a material which is transparent to ultraviolet light.

  5. Copper vapor laser modular packaging assembly

    DOE Patents [OSTI]

    Alger, T.W.; Ault, E.R.; Moses, E.I.

    1992-12-01

    A modularized packaging arrangement for one or more copper vapor lasers and associated equipment is disclosed herein. This arrangement includes a single housing which contains the laser or lasers and all their associated equipment except power, water and neon, and means for bringing power, water, and neon which are necessary to the operation of the lasers into the container for use by the laser or lasers and their associated equipment. 2 figs.

  6. Copper vapor laser modular packaging assembly

    DOE Patents [OSTI]

    Alger, Terry W.; Ault, Earl R.; Moses, Edward I.

    1992-01-01

    A modularized packaging arrangement for one or more copper vapor lasers and associated equipment is disclosed herein. This arrangement includes a single housing which contains the laser or lasers and all their associated equipment except power, water and neon, and means for bringing power, water, and neon which are necessary to the operation of the lasers into the container for use by the laser or lasers and their associated equipment.

  7. DuPont Chemical Vapor Technical Report

    SciTech Connect (OSTI)

    MOORE, T.L.

    2003-10-03

    DuPont Safety Resources was tasked with reviewing the current chemical vapor control practices and providing preventive recommendations on best commercial techniques to control worker exposures. The increased focus of the tank closure project to meet the 2024 Tri-Party Agreement (TPA) milestones has surfaced concerns among some CH2MHill employees and other interested parties. CH2MHill is committed to providing a safe working environment for employees and desires to safely manage the tank farm operations using appropriate control measures. To address worker concerns, CH2MHill has chartered a ''Chemical Vapors Project'' to integrate the activities of multiple CH2MHill project teams, and solicit the expertise of external resources, including an independent Industrial Hygiene expert panel, a communications consultant, and DuPont Safety Resources. Over a three-month time period, DuPont worked with CH2MHill ESH&Q, Industrial Hygiene, Engineering, and the independent expert panel to perform the assessment. The process included overview presentations, formal interviews, informal discussions, documentation review, and literature review. DuPont Safety Resources concluded that it is highly unlikely that workers in the tank farms are exposed to chemicals above established standards. Additionally, the conventional and radiological chemistry is understood, the inherent chemical hazards are known, and the risk associated with chemical vapor exposure is properly managed. The assessment highlighted management's commitment to addressing chemical vapor hazards and controlling the associated risks. Additionally, we found the Industrial Hygiene staff to be technically competent and well motivated. The tank characterization data resides in a comprehensive database containing the tank chemical compositions and relevant airborne concentrations.

  8. The diffuse galactic far-ultraviolet sky

    SciTech Connect (OSTI)

    Hamden, Erika T.; Schiminovich, David; Seibert, Mark

    2013-12-20

    We present an all-sky map of the diffuse Galactic far ultraviolet (1344-1786 Å) background using Galaxy Evolution Explorer data, covering 65% of the sky with 11.79 arcmin{sup 2} pixels. We investigate the dependence of the background on Galactic coordinates, finding that a standard cosecant model of intensity is not a valid fit. Furthermore, we compare our map to Galactic all-sky maps of 100 μm emission, N {sub H} {sub I} column, and Hα intensity. We measure a consistent low level far-UV (FUV) intensity at zero points for other Galactic quantities, indicating a 300 photons cm{sup –2} s{sup –1} sr{sup –1} Å{sup –1} non-scattered isotropic component to the diffuse FUV. There is also a linear relationship between FUV and 100 μm emission below 100 μm values of 8 MJy sr{sup –1}. We find a similar linear relationship between FUV and N {sub H} {sub I} below 10{sup 21} cm{sup –2}. The relationship between FUV and Hα intensity has no such constant cutoff. For all Galactic quantities, the slope of the linear portion of the relationship decreases with Galactic latitude. A modified cosecant model, taking into account dust scattering asymmetry and albedo, is able to accurately fit the diffuse FUV at latitudes above 20°. The best fit model indicates an albedo, a, of 0.62 ± 0.04 and a scattering asymmetry function, g, of 0.78 ± 0.05. Deviations from the model fit may indicate regions of excess FUV emission from fluorescence or shock fronts, while low latitude regions with depressed FUV emission are likely the result of self-shielding dusty clouds.

  9. Combined rankine and vapor compression cycles

    DOE Patents [OSTI]

    Radcliff, Thomas D.; Biederman, Bruce P.; Brasz, Joost J.

    2005-04-19

    An organic rankine cycle system is combined with a vapor compression cycle system with the turbine generator of the organic rankine cycle generating the power necessary to operate the motor of the refrigerant compressor. The vapor compression cycle is applied with its evaporator cooling the inlet air into a gas turbine, and the organic rankine cycle is applied to receive heat from a gas turbine exhaust to heat its boiler within one embodiment, a common condenser is used for the organic rankine cycle and the vapor compression cycle, with a common refrigerant, R-245a being circulated within both systems. In another embodiment, the turbine driven generator has a common shaft connected to the compressor to thereby eliminate the need for a separate motor to drive the compressor. In another embodiment, an organic rankine cycle system is applied to an internal combustion engine to cool the fluids thereof, and the turbo charged air is cooled first by the organic rankine cycle system and then by an air conditioner prior to passing into the intake of the engine.

  10. Simulation of mixed-host emitting layer based organic light emitting diodes

    SciTech Connect (OSTI)

    Riku, C.; Kee, Y. Y.; Ong, T. S.; Tou, T. Y.; Yap, S. S.

    2015-04-24

    ‘SimOLED’ simulator is used in this work to investigate the efficiency of the mixed-host organic light emitting devices (MH-OLEDs). Tris-(8-hydroxyquinoline) aluminum(3) (Alq{sub 3}) and N,N-diphenyl-N,N-Bis(3-methylphenyl)-1,1-diphenyl-4,4-diamine (TPD) are used as the electron transport layer (ETL) material and hole transport layer (HTL) material respectively, and the indium-doped tin oxide (ITO) and aluminum (Al) as anode and cathode. Three MH-OLEDs, A, B and C with the same structure of ITO / HTM (15 nm) / Mixed host (70 nm) / ETM (10 nm) /Al, are stimulated with ratios TPD:Alq{sub 3} of 3:5, 5:5, and 5:3 respectively. The Poole-Frenkel model for electron and hole mobilities is employed to compute the current density-applied voltage-luminance characteristics, distribution of the electric field, carrier concentrations and recombination rate.

  11. Dislocation-related trap levels in nitride-based light emitting diodes

    SciTech Connect (OSTI)

    Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna

    2014-05-26

    Deep level transient spectroscopy was performed on InGaN/GaN multiple quantum well light emitting diodes (LEDs) in order to determine the effect of the dislocation density on the deep intragap electronic levels. The LEDs were grown by metalorganic vapor phase epitaxy on GaN templates with a high dislocation density of 8 10{sup 9} cm{sup ?2} and a low dislocation density of 3 10{sup 8} cm{sup ?2}. Three trapping levels for electrons were revealed, named A, A1, and B, with energies E{sub A}???0.04?eV, E{sub A1}???0.13?eV, and E{sub B}???0.54?eV, respectively. The trapping level A has a much higher concentration in the LEDs grown on the template with a high density of dislocations. The logarithmic dependence of the peak amplitude on the bias pulse width for traps A and A1 identifies the defects responsible for these traps as associated with linearly arranged defects. We conclude that traps A and A1 are dislocation-related intragap energy levels.

  12. Coupling scales for modelling heavy metal vaporization from municipal solid waste incineration in a fluid bed by CFD

    SciTech Connect (OSTI)

    Soria, José; Gauthier, Daniel; Flamant, Gilles; Rodriguez, Rosa; Mazza, Germán

    2015-09-15

    Highlights: • A CFD two-scale model is formulated to simulate heavy metal vaporization from waste incineration in fluidized beds. • MSW particle is modelled with the macroscopic particle model. • Influence of bed dynamics on HM vaporization is included. • CFD predicted results agree well with experimental data reported in literature. • This approach may be helpful for fluidized bed reactor modelling purposes. - Abstract: Municipal Solid Waste Incineration (MSWI) in fluidized bed is a very interesting technology mainly due to high combustion efficiency, great flexibility for treating several types of waste fuels and reduction in pollutants emitted with the flue gas. However, there is a great concern with respect to the fate of heavy metals (HM) contained in MSW and their environmental impact. In this study, a coupled two-scale CFD model was developed for MSWI in a bubbling fluidized bed. It presents an original scheme that combines a single particle model and a global fluidized bed model in order to represent the HM vaporization during MSW combustion. Two of the most representative HM (Cd and Pb) with bed temperatures ranging between 923 and 1073 K have been considered. This new approach uses ANSYS FLUENT 14.0 as the modelling platform for the simulations along with a complete set of self-developed user-defined functions (UDFs). The simulation results are compared to the experimental data obtained previously by the research group in a lab-scale fluid bed incinerator. The comparison indicates that the proposed CFD model predicts well the evolution of the HM release for the bed temperatures analyzed. It shows that both bed temperature and bed dynamics have influence on the HM vaporization rate. It can be concluded that CFD is a rigorous tool that provides valuable information about HM vaporization and that the original two-scale simulation scheme adopted allows to better represent the actual particle behavior in a fluid bed incinerator.

  13. Light-emitting block copolymers composition, process and use

    DOE Patents [OSTI]

    Ferraris, John P.; Gutierrez, Jose J.

    2006-11-14

    Generally, and in one form, the present invention is a composition of light-emitting block copolymer. In another form, the present invention is a process producing a light-emitting block copolymers that intends polymerizing a first di(halo-methyl) aromatic monomer compound in the presence of an anionic initiator and a base to form a polymer and contacting a second di(halo-methyl) aromatic monomer compound with the polymer to form a homopolymer or block copolymer wherein the block copolymer is a diblock, triblock, or star polymer. In yet another form, the present invention is an electroluminescent device comprising a light-emitting block copolymer, wherein the electroluminescent device is to be used in the manufacturing of optical and electrical devices.

  14. Flip-chip light emitting diode with resonant optical microcavity

    DOE Patents [OSTI]

    Gee, James M.; Bogart, Katherine H.A.; Fischer, Arthur J.

    2005-11-29

    A flip-chip light emitting diode with enhanced efficiency. The device structure employs a microcavity structure in a flip-chip configuration. The microcavity enhances the light emission in vertical modes, which are readily extracted from the device. Most of the rest of the light is emitted into waveguided lateral modes. Flip-chip configuration is advantageous for light emitting diodes (LEDs) grown on dielectric substrates (e.g., gallium nitride LEDs grown on sapphire substrates) in general due to better thermal dissipation and lower series resistance. Flip-chip configuration is advantageous for microcavity LEDs in particular because (a) one of the reflectors is a high-reflectivity metal ohmic contact that is already part of the flip-chip configuration, and (b) current conduction is only required through a single distributed Bragg reflector. Some of the waveguided lateral modes can also be extracted with angled sidewalls used for the interdigitated contacts in the flip-chip configuration.

  15. Oxycarbonitride phosphors and light emitting devices using the same

    DOE Patents [OSTI]

    Li, Yuanqiang; Romanelli, Michael Dennis; Tian, Yongchi

    2014-07-08

    Disclosed herein is a novel family of oxycarbonitride phosphor compositions and light emitting devices incorporating the same. Within the sextant system of M--Al--Si--O--N--C--Ln and quintuplet system of M--Si--O--N--C--Ln (M=alkaline earth element, Ln=rare earth element), the phosphors are composed of either one single crystalline phase or two crystalline phases with high chemical and thermal stability. In certain embodiments, the disclosed phosphor of silicon oxycarbonitrides emits green light at wavelength between 530-550 nm. In further embodiments, the disclosed phosphor compositions emit blue-green to yellow light in a wavelength range of 450-650 nm under near-UV and blue light excitation.

  16. Oxycarbonitride phosphors and light emitting devices using the same

    DOE Patents [OSTI]

    Li, Yuanqiang; Romanelli, Michael Dennis; Tian, Yongchi

    2013-10-08

    Disclosed herein is a novel family of oxycarbidonitride phosphor compositions and light emitting devices incorporating the same. Within the sextant system of M--Al--Si--O--N--C--Ln and quintuplet system of M--Si--O--N--C--Ln (M=alkaline earth element, Ln=rare earth element), the phosphors are composed of either one single crystalline phase or two crystalline phases with high chemical and thermal stability. In certain embodiments, the disclosed phosphor of silicon oxycarbidonitrides emits green light at wavelength between 530-550 nm. In further embodiments, the disclosed phosphor compositions emit blue-green to yellow light in a wavelength range of 450-650 nm under near-UV and blue light excitation.

  17. Close-packed array of light emitting devices

    DOE Patents [OSTI]

    Ivanov, Ilia N.; Simpson, John T.

    2013-04-09

    A close-packed array of light emitting diodes includes a nonconductive substrate having a plurality of elongate channels extending therethrough from a first side to a second side, where each of the elongate channels in at least a portion of the substrate includes a conductive rod therein. The conductive rods have a density over the substrate of at least about 1,000 rods per square centimeter and include first conductive rods and second conductive rods. The close-packed array further includes a plurality of light emitting diodes on the first side of the substrate, where each light emitting diode is in physical contact with at least one first conductive rod and in electrical contact with at least one second conductive rod.

  18. Light emitting ceramic device and method for fabricating the same

    DOE Patents [OSTI]

    Valentine, Paul; Edwards, Doreen D.; Walker Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

    2004-11-30

    A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, and alternative methods of fabrication for the same are claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

  19. Optical pumping in a microfabricated Rb vapor cell using a microfabricated Rb discharge light source

    SciTech Connect (OSTI)

    Venkatraman, V.; Kang, S.; Affolderbach, C.; Mileti, G.; Shea, H.

    2014-02-03

    Miniature (vapor-cell based devices using optical pumping of alkali atoms, such as atomic clocks and magnetometers, today mostly employ vertical-cavity surface-emitting lasers as pump light sources. Here, we report on the demonstration of optical pumping in a microfabricated alkali vapor resonance cell using (1) a microfabricated Rb discharge lamp light source, as well as (2) a conventional glass-blown Rb discharge lamp. The microfabricated Rb lamp cell is a dielectric barrier discharge (DBD) light source, having the same inner cell volume of around 40 mm{sup 3} as that of the resonance cell, both filled with suitable buffer gases. A miniature (∼2 cm{sup 3} volume) test setup based on the M{sub z} magnetometer interrogation technique was used for observation of optical-radiofrequency double-resonance signals, proving the suitability of the microfabricated discharge lamp to introduce efficient optical pumping. The pumping ability of this light source was found to be comparable to or even better than that of a conventional glass-blown lamp. The reported results indicate that the micro-fabricated DBD discharge lamp has a high potential for the development of a new class of miniature atomic clocks, magnetometers, and quantum sensors.

  20. Control of the polarization of a vacuum-ultraviolet, high-gain, free-electron laser

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Allaria, Enrico; Diviacco, Bruno; Callegari, Carlo; Finetti, Paola; Mahieu, Benoît; Viefhaus, Jens; Zangrando, Marco; De Ninno, Giovanni; Lambert, Guillaume; Ferrari, Eugenio; et al

    2014-12-02

    The two single-pass, externally seeded free-electron lasers (FELs) of the FERMI user facility are designed around Apple-II-type undulators that can operate at arbitrary polarization in the vacuum ultraviolet-to-soft x-ray spectral range. Furthermore, within each FEL tuning range, any output wavelength and polarization can be set in less than a minute of routine operations. We report the first demonstration of the full output polarization capabilities of FERMI FEL-1 in a campaign of experiments where the wavelength and nominal polarization are set to a series of representative values, and the polarization of the emitted intense pulses is thoroughly characterized by three independentmore » instruments and methods, expressly developed for the task. The measured radiation polarization is consistently >90% and is not significantly spoiled by the transport optics; differing, relative transport losses for horizontal and vertical polarization become more prominent at longer wavelengths and lead to a non-negligible ellipticity for an originally circularly polarized state. The results from the different polarimeter setups validate each other, allow a cross-calibration of the instruments, and constitute a benchmark for user experiments.« less

  1. Control of the polarization of a vacuum-ultraviolet, high-gain, free-electron laser

    SciTech Connect (OSTI)

    Allaria, Enrico; Diviacco, Bruno; Callegari, Carlo; Finetti, Paola; Mahieu, Benoît; Viefhaus, Jens; Zangrando, Marco; De Ninno, Giovanni; Lambert, Guillaume; Ferrari, Eugenio; Buck, Jens; Ilchen, Markus; Vodungbo, Boris; Mahne, Nicola; Svetina, Cristian; Spezzani, Carlo; Di Mitri, Simone; Penco, Giuseppe; Trovó, Mauro; Fawley, William M.; Rebernik, Primoz R.; Gauthier, David; Grazioli, Cesare; Coreno, Marcello; Ressel, Barbara; Kivimäki, Antti; Mazza, Tommaso; Glaser, Leif; Scholz, Frank; Seltmann, Joern; Gessler, Patrick; Grünert, Jan; De Fanis, Alberto; Meyer, Michael; Knie, André; Moeller, Stefan P.; Raimondi, Lorenzo; Capotondi, Flavio; Pedersoli, Emanuele; Plekan, Oksana; Danailov, Miltcho B.; Demidovich, Alexander; Nikolov, Ivaylo; Abrami, Alessandro; Gautier, Julien; Lüning, Jan; Zeitoun, Philippe; Giannessi, Luca

    2014-12-02

    The two single-pass, externally seeded free-electron lasers (FELs) of the FERMI user facility are designed around Apple-II-type undulators that can operate at arbitrary polarization in the vacuum ultraviolet-to-soft x-ray spectral range. Furthermore, within each FEL tuning range, any output wavelength and polarization can be set in less than a minute of routine operations. We report the first demonstration of the full output polarization capabilities of FERMI FEL-1 in a campaign of experiments where the wavelength and nominal polarization are set to a series of representative values, and the polarization of the emitted intense pulses is thoroughly characterized by three independent instruments and methods, expressly developed for the task. The measured radiation polarization is consistently >90% and is not significantly spoiled by the transport optics; differing, relative transport losses for horizontal and vertical polarization become more prominent at longer wavelengths and lead to a non-negligible ellipticity for an originally circularly polarized state. The results from the different polarimeter setups validate each other, allow a cross-calibration of the instruments, and constitute a benchmark for user experiments.

  2. Vertical-cavity surface-emitting laser device

    DOE Patents [OSTI]

    Hadley, G. Ronald; Lear, Kevin L.; Awyoung, Adelbert; Choquette, Kent D.

    1999-01-01

    A vertical-cavity surface-emitting laser device. The vertical-cavity surface-emitting laser (VCSEL) device comprises one or more VCSELs with each VCSEL having a mode-control region thereabout, with the mode-control region forming an optical cavity with an effective cavity length different from the effective cavity length within each VCSEL. Embodiments of the present invention can be formed as single VCSELs and as one- or two-dimensional arrays of VCSELs, with either an index-guided mode of operation or an index anti-guided mode of operation being defined by a sign of the difference in the two effective cavity lengths.

  3. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  4. Vapor port and groundwater sampling well

    DOE Patents [OSTI]

    Hubbell, Joel M.; Wylie, Allan H.

    1996-01-01

    A method and apparatus has been developed for combining groundwater monitoring wells with unsaturated-zone vapor sampling ports. The apparatus allows concurrent monitoring of both the unsaturated and the saturated zone from the same well at contaminated areas. The innovative well design allows for concurrent sampling of groundwater and volatile organic compounds (VOCs) in the vadose (unsaturated) zone from a single well, saving considerable time and money. The sample tubes are banded to the outer well casing during installation of the well casing.

  5. Vapor port and groundwater sampling well

    DOE Patents [OSTI]

    Hubbell, J.M.; Wylie, A.H.

    1996-01-09

    A method and apparatus have been developed for combining groundwater monitoring wells with unsaturated-zone vapor sampling ports. The apparatus allows concurrent monitoring of both the unsaturated and the saturated zone from the same well at contaminated areas. The innovative well design allows for concurrent sampling of groundwater and volatile organic compounds (VOCs) in the vadose (unsaturated) zone from a single well, saving considerable time and money. The sample tubes are banded to the outer well casing during installation of the well casing. 10 figs.

  6. Copper vapor laser acoustic thermometry system

    DOE Patents [OSTI]

    Galkowski, Joseph J.

    1987-01-01

    A copper vapor laser (CVL) acoustic thermometry system is disclosed. The invention couples an acoustic pulse a predetermined distance into a laser tube by means of a transducer and an alumina rod such that an echo pulse is returned along the alumina rod to the point of entry. The time differential between the point of entry of the acoustic pulse into the laser tube and the exit of the echo pulse is related to the temperature at the predetermined distance within the laser tube. This information is processed and can provide an accurate indication of the average temperature within the laser tube.

  7. Vaporization and gasification of hydrocarbon feedstocks

    SciTech Connect (OSTI)

    Davies, H.S.; Garstang, J.H.; Timmins, C.

    1983-08-23

    Heavy hydrocarbon feedstocks, e.g. gas oils, are vaporized and subsequently gasified at high temperatures without pyrolytic degradation by first admixing the hydrocarbon with a hot gaseous reactant, e.g. product gas or steam, to bring the temperature of the mixture above that of the dew point of the hydrocarbon and thereafter raising the temperature of the mixture to above that at which pyrolysis of the hydrocarbon begins to be significant by admixture with further quantities of the reactant which are superheated thereby to bring the temperature of the resultant mixture to that required for effecting a catalytic gasification reaction.

  8. Chemical vapor deposition of epitaxial silicon

    DOE Patents [OSTI]

    Berkman, Samuel

    1984-01-01

    A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

  9. Search For Hadronic Axions Emitted From The Sun

    SciTech Connect (OSTI)

    Ljubicic, A.; Kekez, D.; Krecak, Z.

    2007-10-26

    We made a search for hadronic axions, which could be emitted from the Sun in the axiobremsstrahlung process and absorbed in the HPGe detector by axioelectric effect. An upper limit on hadronic axion mass of 100 eV is obtained at the 95% confidence level.

  10. A combined droplet train and ambient pressure photoemission spectrometer for the investigation of liquid/vapor interfaces

    SciTech Connect (OSTI)

    Starr, David E.; Wong, Ed K.; Worsnop, Douglas R.; Wilson, Kevin R.; Bluhm, Hendrik

    2008-05-01

    We describe a combined ambient pressure photoelectron spectroscopy/droplet train apparatus for investigating the nature and heterogeneous chemistry of liquid/vapor interfaces. In this instrument a liquid droplet train with typical droplet diameters from 50...150 {micro}m is produced by a vibrating orifice aerosol generator (VOAG). The droplets are irradiated by soft X-rays (100...1500 eV) in front of the entrance aperture of a differentially pumped electrostatic lens system that transfers the emitted electrons into a conventional hemispherical electron analyzer. The photoemission experiments are performed at background pressures of up to several Torr, which allows the study of environmentally important liquid/vapor interfaces, in particular aqueous solutions, under equilibrium conditions. The exposure time of the droplet surface to the background gases prior to the XPS measurement can be varied, which will allow future kinetic measurements of gas uptake on liquid surfaces. As an example, a measurement of the surface composition of a {chi} = 0.21 aqueous methanol solution is presented. The concentration of methanol at the vapor/liquid interface is enhanced by a factor of about 3 over the bulk value, while the expected bulk value is recovered at depths larger than about 1.5 nm.

  11. G-Band Vapor Radiometer Profiler (GVRP) Handbook

    SciTech Connect (OSTI)

    Caddeau, MP

    2010-06-23

    The G-Band Vapor Radiometer Profiler (GVRP) provides time-series measurements of brightness temperatures from 15 channels between 170 and 183.310 GHz. Atmospheric emission in this spectral region is primarily due to water vapor, with some influence from liquid water. Channels between 170.0 and 176.0 GHz are particularly sensitive to the presence of liquid water. The sensitivity to water vapor of the 183.31-GHz line is approximately 30 times higher than at the frequencies of the two-channel microwave radiometer (MWR) for a precipitable water vapor (PWV) amount of less than 2.5 mm. Measurements from the GVRP instrument are therefore especially useful during low-humidity conditions (PWV < 5 mm). In addition to integrated water vapor and liquid water, the GVRP can provide low-resolution vertical profiles of water vapor in very dry conditions.

  12. Method and apparatus for concentrating vapors for analysis

    DOE Patents [OSTI]

    Grate, Jay W.; Baldwin, David L.; Anheier, Jr., Norman C.

    2012-06-05

    A pre-concentration device and a method are disclosed for concentrating gaseous vapors for analysis. Vapors sorbed and concentrated within the bed of the pre-concentration device are thermally desorbed, achieving at least partial separation of the vapor mixtures. The pre-concentration device is suitable, e.g., for pre-concentration and sample injection, and provides greater resolution of peaks for vapors within vapor mixtures, yielding detection levels that are 10-10,000 times better than direct sampling and analysis systems. Features are particularly useful for continuous unattended monitoring applications. The invention finds application in conjunction with, e.g., analytical instruments where low detection limits for gaseous vapors are desirable.

  13. Filter for isotopic alteration of mercury vapor

    DOE Patents [OSTI]

    Grossman, Mark W.; George, William A.

    1989-01-01

    A filter for enriching the .sup.196 Hg content of mercury, including a reactor, a low pressure electric discharge lamp containing a fill of mercury and an inert gas. A filter is arranged concentrically around the lamp. The reactor is arranged around said filter, whereby radiation from said lamp passes through the filter and into said reactor. The lamp, the filter and the reactor are formed of quartz, and are transparent to ultraviolet light. The .sup.196 Hg concentration in the mercury fill is less than that which is present in naturally occurring mercury, that is less than about 0.146 atomic weight percent. Hydrogen is also included in the fill and serves as a quenching gas in the filter, the hydrogen also serving to prevent disposition of a dark coating on the interior of the filter.

  14. Filter for isotopic alteration of mercury vapor

    DOE Patents [OSTI]

    Grossman, M.W.; George, W.A.

    1989-06-13

    A filter is described for enriching the [sup 196]Hg content of mercury, including a reactor, a low pressure electric discharge lamp containing a fill of mercury and an inert gas. A filter is arranged concentrically around the lamp. The reactor is arranged around said filter, whereby radiation from said lamp passes through the filter and into said reactor. The lamp, the filter and the reactor are formed of quartz, and are transparent to ultraviolet light. The [sup 196]Hg concentration in the mercury fill is less than that which is present in naturally occurring mercury, that is, less than about 0.146 atomic weight percent. Hydrogen is also included in the fill and serves as a quenching gas in the filter, the hydrogen also serving to prevent disposition of a dark coating on the interior of the filter. 9 figs.

  15. Review of enhanced vapor diffusion in porous media

    SciTech Connect (OSTI)

    Webb, S.W.; Ho, C.K.

    1998-08-01

    Vapor diffusion in porous media in the presence of its own liquid has often been treated similar to gas diffusion. The gas diffusion rate in porous media is much lower than in free space due to the presence of the porous medium and any liquid present. However, enhanced vapor diffusion has also been postulated such that the diffusion rate may approach free-space values. Existing data and models for enhanced vapor diffusion, including those in TOUGH2, are reviewed in this paper.

  16. Method for controlling corrosion in thermal vapor injection gases

    DOE Patents [OSTI]

    Sperry, John S.; Krajicek, Richard W.

    1981-01-01

    An improvement in the method for producing high pressure thermal vapor streams from combustion gases for injection into subterranean oil producing formations to stimulate the production of viscous minerals is described. The improvement involves controlling corrosion in such thermal vapor gases by injecting water near the flame in the combustion zone and injecting ammonia into a vapor producing vessel to contact the combustion gases exiting the combustion chamber.

  17. Hot-Wire Chemical Vapor Deposition (HWCVD) technologies - Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Applications and Industries Solar cells Thin-film transistors Light emitting diodes Gas sensors Electrochromic windows Organic devices Micromechanical structures Patents and Patent ...

  18. Soft X-Ray and Vacuum Ultraviolet Based Spectroscopy of the Actinides...

    Office of Scientific and Technical Information (OSTI)

    Conference: Soft X-Ray and Vacuum Ultraviolet Based Spectroscopy of the Actinides Citation Details In-Document Search Title: Soft X-Ray and Vacuum Ultraviolet Based Spectroscopy of ...

  19. Soft X-Ray and Vacuum Ultraviolet Based Spectroscopy of the Actinides...

    Office of Scientific and Technical Information (OSTI)

    Conference: Soft X-Ray and Vacuum Ultraviolet Based Spectroscopy of the Actinides Citation Details In-Document Search Title: Soft X-Ray and Vacuum Ultraviolet Based Spectroscopy of...

  20. Direct-Current Resistivity Survey At Cove Fort Area - Vapor ...

    Open Energy Info (EERE)

    2002) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Direct-Current Resistivity Survey At Cove Fort Area - Vapor (Warpinski, Et Al., 2002)...

  1. The role of polymer formation during vapor phase lubrication...

    Office of Scientific and Technical Information (OSTI)

    The lubrication of silicon surfaces with alcohol vapors has recently been demonstrated. ... The parent alcohol molecule pentanol, has molecular weight of 88amu, suggesting that ...

  2. Ground Gravity Survey At Cove Fort Area - Vapor (Warpinski, Et...

    Open Energy Info (EERE)

    Ground Gravity Survey At Cove Fort Area - Vapor (Warpinski, Et Al., 2002) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Ground Gravity Survey...

  3. Glenwood Springs Vapor Caves Pool & Spa Low Temperature Geothermal...

    Open Energy Info (EERE)

    & Spa Low Temperature Geothermal Facility Jump to: navigation, search Name Glenwood Springs Vapor Caves Pool & Spa Low Temperature Geothermal Facility Facility Glenwood Springs...

  4. Mercury Vapor At Mccoy Geothermal Area (DOE GTP) | Open Energy...

    Open Energy Info (EERE)

    Mccoy Geothermal Area (DOE GTP) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Mccoy Geothermal Area (DOE GTP) Exploration...

  5. Numerical modeling of water injection into vapor-dominatedgeothermal...

    Office of Scientific and Technical Information (OSTI)

    Technical Report: Numerical modeling of water injection into vapor-dominatedgeothermal reservoirs Citation Details In-Document Search Title: Numerical modeling of water injection ...

  6. New Vapor-Particle Separator Improves Understanding of Aircraft...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    separate volatile particles from condensible vapors in aircraft engine emissions. ... of the combustion process of modern jet engines and the formation process of ...

  7. Overview of the ARM/FIRE Water Vapor Experiment (AFWEX)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Water Vapor Experiment (AFWEX) D. C. Tobin, H. E. Revercomb, and D. D. Turner University of Wisconsin-Madison Madison, Wisconsin Introduction An overview of the ARMFIRE Water ...

  8. Posters Toward an Operational Water Vapor Remote Sensing System...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3 Posters Toward an Operational Water Vapor Remote Sensing System Using the Global ... T. Van Hove and C. Rocken University Navstar Consortium Boulder, Colorado Background Water ...

  9. Mercury Vapor At Mokapu Penninsula Area (Thomas, 1986) | Open...

    Open Energy Info (EERE)

    Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Mokapu Penninsula Area (Thomas, 1986) Exploration Activity Details Location...

  10. Mercury Vapor At Lualualei Valley Area (Thomas, 1986) | Open...

    Open Energy Info (EERE)

    Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Lualualei Valley Area (Thomas, 1986) Exploration Activity Details Location...

  11. Mercury Vapor At Kawaihae Area (Thomas, 1986) | Open Energy Informatio...

    Open Energy Info (EERE)

    Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Kawaihae Area (Thomas, 1986) Exploration Activity Details Location Kawaihae...

  12. Mercury Vapor At Mauna Loa Northeast Rift Area (Thomas, 1986...

    Open Energy Info (EERE)

    Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Mauna Loa Northeast Rift Area (Thomas, 1986) Exploration Activity Details...

  13. Mercury Vapor At Socorro Mountain Area (Kooten, 1987) | Open...

    Open Energy Info (EERE)

    Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Socorro Mountain Area (Kooten, 1987) Exploration Activity Details Location...

  14. Mercury Vapor At Medicine Lake Area (Kooten, 1987) | Open Energy...

    Open Energy Info (EERE)

    Medicine Lake Area (Kooten, 1987) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Medicine Lake Area (Kooten, 1987) Exploration...

  15. Validation of TES Temperature and Water Vapor Retrievals with...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The primary objective of the TES (Tropospheric Emission Spectrometer) instrument on the Aura spacecraft is the retrieval of trace gases, especially water vapor and ozone. The TES...

  16. Ground Magnetics At Cove Fort Area - Vapor (Warpinski, Et Al...

    Open Energy Info (EERE)

    to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Ground Magnetics At Cove Fort Area - Vapor (Warpinski, Et Al., 2002) Exploration Activity Details...

  17. PROJECT PROFILE: Stable Perovskite Solar Cells via Chemical Vapor...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Stable Perovskite Solar Cells via Chemical Vapor Deposition PROJECT PROFILE: Stable ... would be suitable for a photovoltaic absorber in a single or multi-junction cell. ...

  18. Vapor and gas sampling of single-shell tank 241-S-103 using the in situ vapor sampling system

    SciTech Connect (OSTI)

    Lockrem, L.L.

    1997-08-05

    The Vapor Issue Resolution Program tasked the Vapor Team (VT) to collect representative headspace samples from Hanford Site single-shell tank (SST) 241-S-103. This document presents In Situ Vapor Sampling System (ISVS) data resulting from the June 12, 1996 sampling of SST 241-S-103. Analytical results will be presented in separate reports issued by the Pacific Northwest National Laboratory (PNNL) which supplied and analyzed the sample media.

  19. Vapor and gas sampling of the single-shell tank 241-S-101 using the in situ vapor sampling system

    SciTech Connect (OSTI)

    Lockrem, L.L.

    1997-08-05

    The Vapor Issue Resolution Program tasked the Vapor Team (VT) to collect representative headspace samples from Hanford Site single-shell tank (SST) 241-S-101. This document presents In Situ Vapor Sampling System (ISVS) data resulting from the June 6, 1996 sampling of SST 241-S-101. Analytical results will be presented in separate reports issued by the Pacific Northwest National Laboratory (PNNL) which supplied and analyzed the sample media.

  20. Key issues of ultraviolet radiation of OH at high altitudes

    SciTech Connect (OSTI)

    Zhang, Yuhuai; Wan, Tian; Jiang, Jianzheng; Fan, Jing

    2014-12-09

    Ultraviolet (UV) emissions radiated by hydroxyl (OH) is one of the fundamental elements in the prediction of radiation signature of high-altitude and high-speed vehicle. In this work, the OH A{sup 2}?{sup +}?X{sup 2}? ultraviolet emission band behind the bow shock is computed under the experimental condition of the second bow-shock ultraviolet flight (BSUV-2). Four related key issues are discussed, namely, the source of hydrogen element in the high-altitude atmosphere, the formation mechanism of OH species, efficient computational algorithm of trace species in rarefied flows, and accurate calculation of OH emission spectra. Firstly, by analyzing the typical atmospheric model, the vertical distributions of the number densities of different species containing hydrogen element are given. According to the different dominating species containing hydrogen element, the atmosphere is divided into three zones, and the formation mechanism of OH species is analyzed in the different zones. The direct simulation Monte Carlo (DSMC) method and the Navier-Stokes equations are employed to compute the number densities of the different OH electronically and vibrationally excited states. Different to the previous work, the trace species separation (TSS) algorithm is applied twice in order to accurately calculate the densities of OH species and its excited states. Using a non-equilibrium radiation model, the OH ultraviolet emission spectra and intensity at different altitudes are computed, and good agreement is obtained with the flight measured data.

  1. Vapor and gas sampling of Single-Shell Tank 241-A-101 using the Vapor Sampling System

    SciTech Connect (OSTI)

    Caprio, G.S.

    1995-11-01

    This document presents sampling data resulting from the June 8, 1995, sampling of SST 241-A-101 using the Vapor Sampling System.

  2. Biophysical controls on carbon and water vapor fluxes across a grassland climatic gradient in the United States

    SciTech Connect (OSTI)

    Wagle, Pradeep; Xiao, Xiangming; Scott, Russell L.; Kolb, Thomas E.; Cook, David R.; Brunsell, Nathaniel; Baldocchi, Dennis D.; Basara, Jeffrey; Matamala, Roser; Zhou, Yuting; Bajgain, Rajen

    2015-12-01

    Understanding of the underlying causes of spatial variation in exchange of carbon and water vapor fluxes between grasslands and the atmosphere is crucial for accurate estimates of regional and global carbon and water budgets, and for predicting the impact of climate change on biosphere–atmosphere feedbacks of grasslands. We used ground-based eddy flux and meteorological data, and the Moderate Resolution Imaging Spectroradiometer (MODIS) enhanced vegetation index (EVI) from 12 grasslands across the United States to examine the spatial variability in carbon and water vapor fluxes and to evaluate the biophysical controls on the spatial patterns of fluxes. Precipitation was strongly associated with spatial and temporal variability in carbon and water vapor fluxes and vegetation productivity. Grasslands with annual average precipitation <600 mm generally had neutral annual carbon balance or emitted small amount of carbon to the atmosphere. Despite strong coupling between gross primary production (GPP)and evapotranspiration (ET) across study sites, GPP showed larger spatial variation than ET, and EVI had a greater effect on GPP than on ET. Consequently, large spatial variation in ecosystem water use efficiency (EWUE = annual GPP/ET; varying from 0.67 ± 0.55 to 2.52 ± 0.52 g C mm⁻¹ET) was observed. Greater reduction in GPP than ET at high air temperature and vapor pressure deficit caused a reduction in EWUE in dry years, indicating a response which is opposite than what has been reported for forests. Our results show that spatial and temporal variations in ecosystem carbon uptake, ET, and water use efficiency of grasslands were strongly associated with canopy greenness and coverage, as indicated by EVI.

  3. Phosphorescent organic light emitting diodes with high efficiency and brightness

    DOE Patents [OSTI]

    Forrest, Stephen R; Zhang, Yifan

    2015-11-12

    An organic light emitting device including a) an anode; b) a cathode; and c) an emissive layer disposed between the anode and the cathode, the emissive layer comprising an organic host compound and a phosphorescent compound exhibiting a Stokes Shift overlap greater than 0.3 eV. The organic light emitting device may further include a hole transport layer disposed between the emissive layer and the anode; and an electron transport layer disposed between the emissive layer and the cathode. In some embodiments, the phosphorescent compound exhibits a phosphorescent lifetime of less than 10 .mu.s. In some embodiments, the concentration of the phosphorescent compound ranges from 0.5 wt. % to 10 wt. %.

  4. Vertical-cavity surface-emitting laser device

    DOE Patents [OSTI]

    Hadley, G.R.; Lear, K.L.; Awyoung, A.; Choquette, K.D.

    1999-05-11

    A vertical-cavity surface-emitting laser device is disclosed. The vertical-cavity surface-emitting laser (VCSEL) device comprises one or more VCSELs with each VCSEL having a mode-control region thereabout, with the mode-control region forming an optical cavity with an effective cavity length different from the effective cavity length within each VCSEL. Embodiments of the present invention can be formed as single VCSELs and as one- or two-dimensional arrays of VCSELs, with either an index-guided mode of operation or an index anti-guided mode of operation being defined by a sign of the difference in the two effective cavity lengths. 10 figs.

  5. Concave-hemisphere-patterned organic top-light emitting device

    DOE Patents [OSTI]

    Forrest, Stephen R; Slootsky, Michael; Lunt, Richard

    2014-01-21

    A first device is provided. The first device includes an organic light emitting device, which further comprises a first electrode, a second electrode, and an organic emissive layer disposed between the first and second electrode. Preferably, the second electrode is more transparent than the first electrode. The organic emissive layer has a first portion shaped to form an indentation in the direction of the first electrode, and a second portion shaped to form a protrusion in the direction of the second electrode. The first device may include a plurality of organic light emitting devices. The indentation may have a shape that is formed from a partial sphere, a partial cylinder, a pyramid, or a pyramid with a mesa, among others. The protrusions may be formed between adjoining indentations or between an indentation and a surface parallel to the substrate.

  6. Concave-hemisphere-patterned organic top-light emitting device

    DOE Patents [OSTI]

    Forrest, Stephen R.; Slootsky, Michael; Lunt, Richard

    2015-06-09

    A first device is provided. The first device includes an organic light emitting device, which further comprises a first electrode, a second electrode, and an organic emissive layer disposed between the first and second electrode. Preferably, the second electrode is more transparent than the first electrode. The organic emissive layer has a first portion shaped to form an indentation in the direction of the first electrode, and a second portion shaped to form a protrusion in the direction of the second electrode. The first device may include a plurality of organic light emitting devices. The indentation may have a shape that is formed from a partial sphere, a partial cylinder, a pyramid, or a pyramid with a mesa, among others. The protrusions may be formed between adjoining indentations or between an indentation and a surface parallel to the substrate.

  7. Organic light-emitting diodes from homoleptic square planar complexes

    DOE Patents [OSTI]

    Omary, Mohammad A

    2013-11-12

    Homoleptic square planar complexes [M(N.LAMBDA.N).sub.2], wherein two identical N.LAMBDA.N bidentate anionic ligands are coordinated to the M(II) metal center, including bidentate square planar complexes of triazolates, possess optical and electrical properties that make them useful for a wide variety of optical and electrical devices and applications. In particular, the complexes are useful for obtaining white or monochromatic organic light-emitting diodes ("OLEDs"). Improved white organic light emitting diode ("WOLED") designs have improved efficacy and/or color stability at high brightness in single- or two-emitter white or monochrome OLEDs that utilize homoleptic square planar complexes, including bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II) ("Pt(ptp).sub.2").

  8. Chemical vapor deposition of group IIIB metals

    DOE Patents [OSTI]

    Erbil, Ahmet

    1989-01-01

    Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula (I) ##STR1## where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula I is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula I and a heat decomposable tellurium compound under nonoxidizing conditions.

  9. Vapor pressure osmometry studies on buckminsterfullerene

    SciTech Connect (OSTI)

    Honeychuck, R.V.; Cruger, T.W.; Milliken, J.

    1993-12-31

    Vapor pressure osmometry has been employed in studies of solutions of buckminsterfullerene (C{sub 60}. Two aromatic solvents were selected in order to obtain solutions which would be as concentrated as possible. The number-average molecular weights M{sub n} of C{sub 60} determined by analysis of the data are 930 {+-} 5 g mol{sup {minus}1} in chlorobenzene and 700 {+-} 10 g mol{sup {minus}1} in toluene), so the M{sub n} obtained in chlorobenzene is unexpected. Both determinations were performed with the same batch of C{sub 60}, which was processed to yield material of very high purity. The amount of interstitial N{sub 2} was determined using an appropriate method. The role if interstitial molecules, solvents in the crystal lattice, solvent-fullerene complexes, C{sub 70}, and C{sub 60} dimers in these measurements will be discussed.

  10. Kinetics of wet sodium vapor complex plasma

    SciTech Connect (OSTI)

    Mishra, S. K., E-mail: nishfeb@rediffmail.com [Institute for Plasma Research (IPR), Gandhinagar 382428 (India); Sodha, M. S. [Centre of Energy Studies, Indian Institute of Technology Delhi (IITD), New Delhi 110016 (India)] [Centre of Energy Studies, Indian Institute of Technology Delhi (IITD), New Delhi 110016 (India)

    2014-04-15

    In this paper, we have investigated the kinetics of wet (partially condensed) Sodium vapor, which comprises of electrons, ions, neutral atoms, and Sodium droplets (i) in thermal equilibrium and (ii) when irradiated by light. The formulation includes the balance of charge over the droplets, number balance of the plasma constituents, and energy balance of the electrons. In order to evaluate the droplet charge, a phenomenon for de-charging of the droplets, viz., evaporation of positive Sodium ions from the surface has been considered in addition to electron emission and electron/ion accretion. The analysis has been utilized to evaluate the steady state parameters of such complex plasmas (i) in thermal equilibrium and (ii) when irradiated; the results have been graphically illustrated. As a significant outcome irradiated, Sodium droplets are seen to acquire large positive potential, with consequent enhancement in the electron density.

  11. Chemical vapor deposition of group IIIB metals

    DOE Patents [OSTI]

    Erbil, A.

    1989-11-21

    Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula given in the patent where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula 1 is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula 1 and a heat decomposable tellurium compound under nonoxidizing conditions.

  12. Brazing titanium-vapor-coated zirconia

    SciTech Connect (OSTI)

    Santella, M.L. ); Pak, J.J. )

    1993-04-01

    Partially stabilized zirconia was vacuum furnace brazed to itself, to nodular cast iron, and to commercially pure titanium with a Ag-30Cu-10Sn wt% filler metal. Wetting was obtained by coating the ZrO[sub 2] surfaces with Ti prior to brazing by RF sputtering or electron beam evaporation. Braze joints made with Ti-sputter-coated ZrO[sub 2] contained high levels of porosity, but those made with Ti coatings deposited by evaporation, referred to as Ti-vapor-coated, contained little or no porosity. Brazing caused the ZrO[sub 2] within about 1 mm (0.04 in.) of the joint surfaces to turn black in color, and thermodynamic analysis indicated that the discoloration was likely due to oxygen diffusion out of the ZrO[sub 2] into the Ti vapor coating during brazing. Braze joint strength was determined by flexure testing in the four-point bend arrangement, and on a more limited basis, by shear testing. The latter method was used mainly as a screening test for ZrO[sub 2]-Fe and ZrO[sub 2]-Ti joints. Flexure testing of ZrO[sub 2]-ZrO[sub 2] and ZrO[sub 2]-Fe braze joints was done at 25, 200, 400, and 575 C (77, 392, 752 and 1,067 F) in air. For flexure testing, average strengths of joint specimens decreased with increasing test temperature. The lower average strengths of ZrO[sub 2]-Fe specimens compared to those from ZrO[sub 2]-ZrO[sub 2] joints was attributed to higher residual stresses in the ceramic-to-metal joints.

  13. Adoption of Light-Emitting Diodes in Common Lighting Applications

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Adoption of Light-Emitting Diodes in Common Lighting Applications Prepared for the U.S. Department of Energy Solid-State Lighting Program July 2015 Prepared by Navigant This page intentionally left blank i | P a g e Disclaimer This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government, nor any agency thereof, nor any of their employees, nor any of their contractors, subcontractors, or their employees, makes any

  14. Wide Area Thermal Processing of Light Emitting Materials

    SciTech Connect (OSTI)

    Duty, Chad E; Joshi, Pooran C; Jellison Jr, Gerald Earle; Angelini, Joseph Attilio; Sabau, Adrian S

    2011-10-01

    Laboratory laser materials synthesis of wide bandgap materials has been successfully used to create white light emitting materials (LEMs). This technology development has progressed to the exploration on design and construction of apparatus for wide area doping and phase transformation of wide bandgap material substrates. The objective of this proposal is to develop concepts for wide area doping and phase transformation based on AppliCote Associates, LLC laser technology and ORNL high density pulsed plasma arc technology.

  15. Organic light emitting device having multiple separate emissive layers

    DOE Patents [OSTI]

    Forrest, Stephen R. (Ann Arbor, MI)

    2012-03-27

    An organic light emitting device having multiple separate emissive layers is provided. Each emissive layer may define an exciton formation region, allowing exciton formation to occur across the entire emissive region. By aligning the energy levels of each emissive layer with the adjacent emissive layers, exciton formation in each layer may be improved. Devices incorporating multiple emissive layers with multiple exciton formation regions may exhibit improved performance, including internal quantum efficiencies of up to 100%.

  16. Laterally injected light-emitting diode and laser diode

    DOE Patents [OSTI]

    Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

    2015-06-16

    A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

  17. Electrically injected visible vertical cavity surface emitting laser diodes

    DOE Patents [OSTI]

    Schneider, R.P.; Lott, J.A.

    1994-09-27

    Visible laser light output from an electrically injected vertical cavity surface emitting laser (VSCEL) diode is enabled by the addition of phase-matching spacer layers on either side of the active region to form the optical cavity. The spacer layers comprise InAlP which act as charge carrier confinement means. Distributed Bragg reflector layers are formed on either side of the optical cavity to act as mirrors. 5 figs.

  18. Electrically injected visible vertical cavity surface emitting laser diodes

    DOE Patents [OSTI]

    Schneider, Richard P.; Lott, James A.

    1994-01-01

    Visible laser light output from an electrically injected vertical cavity surface emitting laser (VSCEL) diode is enabled by the addition of phase-matching spacer layers on either side of the active region to form the optical cavity. The spacer layers comprise InAlP which act as charge carrier confinement means. Distributed Bragg reflector layers are formed on either side of the optical cavity to act as mirrors.

  19. Method and apparatus for conducting variable thickness vapor deposition

    DOE Patents [OSTI]

    Nesslage, G.V.

    1984-08-03

    A method of vapor depositing metal on a substrate in variable thickness comprises conducting the deposition continuously without interruption to avoid formation of grain boundaries. To achieve reduced deposition in specific regions a thin wire or ribbon blocking body is placed between source and substrate to partially block vapors from depositing in the region immediately below.

  20. Building America Top Innovations 2012: Vapor Retarder Classification

    SciTech Connect (OSTI)

    none,

    2013-01-01

    This Building America Top Innovations profile describes research in vapor retarders. Since 2006 the IRC has permitted Class III vapor retarders like latex paint (see list above) in all climate zones under certain conditions thanks to research by Building America teams.

  1. Operating a radio-frequency plasma source on water vapor

    SciTech Connect (OSTI)

    Nguyen, Sonca V. T.; Gallimore, Alec D.; Foster, John E.

    2009-08-15

    A magnetically enhanced radio-frequency (rf) plasma source operating on water vapor has an extensive list of potential applications. In this work, the use of a rf plasma source to dissociate water vapor for hydrogen production is investigated. This paper describes a rf plasma source operated on water vapor and characterizes its plasma properties using a Langmuir probe, a residual gas analyzer, and a spectrometer. The plasma source operated first on argon and then on water vapor at operating pressures just over 300 mtorr. Argon and water vapor plasma number densities differ significantly. In the electropositive argon plasma, quasineutrality requires n{sub i}{approx_equal}n{sub e}, where n{sub i} is the positive ion density. But in the electronegative water plasma, quasineutrality requires n{sub i+}=n{sub i-}+n{sub e}. The positive ion density and electron density of the water vapor plasma are approximately one and two orders of magnitude lower, respectively, than those of argon plasma. These results suggest that attachment and dissociative attachment are present in electronegative water vapor plasma. The electron temperature for this water vapor plasma source is between 1.5 and 4 eV. Without an applied axial magnetic field, hydrogen production increases linearly with rf power. With an axial magnetic field, hydrogen production jumps to a maximum value at 500 W and then saturates with rf power. The presence of the applied axial magnetic field is therefore shown to enhance hydrogen production.

  2. Hybrid Vapor Compression Adsorption System: Thermal Storage Using Hybrid Vapor Compression Adsorption System

    SciTech Connect (OSTI)

    2012-01-04

    HEATS Project: UTRC is developing a new climate-control system for EVs that uses a hybrid vapor compression adsorption system with thermal energy storage. The targeted, closed system will use energy during the battery-charging step to recharge the thermal storage, and it will use minimal power to provide cooling or heating to the cabin during a drive cycle. The team will use a unique approach of absorbing a refrigerant on a metal salt, which will create a lightweight, high-energy-density refrigerant. This unique working pair can operate indefinitely as a traditional vapor compression heat pump using electrical energy, if desired. The project will deliver a hot-and-cold battery that provides comfort to the passengers using minimal power, substantially extending the driving range of EVs.

  3. Gas Separation Using Organic-Vapor-Resistent Membranes In Conjunctin With Organic-Vapor-Selective Membranes

    DOE Patents [OSTI]

    Baker, Richard W.; Pinnau, Ingo; He, Zhenjie; Da Costa, Andre R.; Daniels, Ramin; Amo, Karl D.; Wijmans, Johannes G.

    2003-06-03

    A process for treating a gas mixture containing at least an organic compound gas or vapor and a second gas, such as natural gas, refinery off-gas or air. The process uses two sequential membrane separation steps, one using membrane selective for the organic compound over the second gas, the other selective for the second gas over the organic vapor. The second-gas-selective membranes use a selective layer made from a polymer having repeating units of a fluorinated polymer, and demonstrate good resistance to plasticization by the organic components in the gas mixture under treatment, and good recovery after exposure to liquid aromatic hydrocarbons. The membrane steps can be combined in either order.

  4. Observable form of pulses emitted from relativistic collapsing objects

    SciTech Connect (OSTI)

    Frolov, Valeri P.; Lee, Hyun Kyu

    2005-02-15

    In this work, we discuss observable characteristics of the radiation emitted from a surface of a collapsing object. We study a simplified model in which a radiation of massless particles has a sharp in time profile, and it happens at the surface at the same moment of comoving time. Since the radiating surface has finite size the observed radiation will occur during some finite time. Its redshift and bending angle are affected by the strong gravitational field. We obtain a simple expression for the observed flux of the radiation as a function of time. To find an explicit expression for the flux we develop an analytical approximation for the bending angle and time delay for null rays emitted by a collapsing surface. In the case of the bending angle this approximation is an improved version of the earlier proposed Beloborodov-Leahy-approximation. For rays emitted at R>2R{sub g} the accuracy of the proposed improved approximations for the bending angle and time delay is of order (or less) than 2%-3%. By using this approximation we obtain an approximate analytical expression for the observed flux and study its properties.

  5. Observable Form of Pulses Emitted From Relativistic Collapsing Objects

    SciTech Connect (OSTI)

    Frolov, V.

    2005-01-28

    In this work, we discuss observable characteristics of the radiation emitted from a surface of a collapsing object. We study a simplified model in which a radiation of massless particles has a sharp in time profile and it happens at the surface at the same moment of comoving time. Since the radiating surface has finite size the observed radiation will occur during some finite time. Its redshift and bending angle are affected by the strong gravitational field. We obtain a simple expression for the observed flux of the radiation as a function of time. To find an explicit expression for the flux we develop an analytical approximation for the bending angle and time delay for null rays emitted by a collapsing surface. In the case of the bending angle this approximation is an improved version of the earlier proposed Beloborodov-Leahy-approximation. For rays emitted at R > 2R{sub g} the accuracy of the proposed improved approximations for the bending angle and time delay is of order (or less) than 2-3%. By using this approximation we obtain an approximate analytical expression for the observed flux and study its properties.

  6. Double Beta Decay in Xenon-136: Measuring the Neutrino-Emitting...

    Office of Scientific and Technical Information (OSTI)

    Double Beta Decay in Xenon-136: Measuring the Neutrino-Emitting Mode and Searching for Majoron-Emitting Modes Citation Details In-Document Search Title: Double Beta Decay in...

  7. High-Efficiency and Stable White Organic Light-Emitting Diode...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Efficiency and Stable White Organic Light-Emitting Diode Using a Single Emitter High-Efficiency and Stable White Organic Light-Emitting Diode Using a Single Emitter Lead Performer: ...

  8. Materials and architectures for efficient harvesting of singlet and triplet excitons for white light emitting OLEDs

    DOE Patents [OSTI]

    Thompson, Mark E; Forrest, Stephen

    2015-02-03

    The present invention relates to organic light emitting devices (OLEDs), and more specifically to OLEDS that emit light using a combination of fluorescent emitters and phosphorescent emitters for the efficient utilization of all of the electrically generated excitons.

  9. Development of bottom-emitting 1300 nm vertical-cavity surface...

    Office of Scientific and Technical Information (OSTI)

    Title: Development of bottom-emitting 1300 nm vertical-cavity surface-emitting lasers. No abstract prepared. Authors: Fish, M. A. 1 ; Serkland, Darwin Keith ; Guilfoyle, Peter S. ...

  10. Thin planar package for cooling an array of edge-emitting laser...

    Office of Scientific and Technical Information (OSTI)

    Thin planar package for cooling an array of edge-emitting laser diodes Title: Thin planar package for cooling an array of edge-emitting laser diodes A laser diode array is ...

  11. Analysis of organic vapors with laser induced breakdown spectroscopy

    SciTech Connect (OSTI)

    Nozari, Hadi; Tavassoli, Seyed Hassan; Rezaei, Fatemeh

    2015-09-15

    In this paper, laser induced breakdown spectroscopy (LIBS) is utilized in the study of acetone, ethanol, methanol, cyclohexane, and nonane vapors. Carbon, hydrogen, oxygen, and nitrogen atomic emission spectra have been recorded following laser-induced breakdown of the organic vapors that are mixed with air inside a quartz chamber at atmospheric pressure. The plasma is generated with focused, Q-switched Nd:YAG radiation at the wavelength of 1064 nm. The effects of ignition and vapor pressure are discussed in view of the appearance of the emission spectra. The recorded spectra are proportional to the vapor pressure in air. The hydrogen and oxygen contributions diminish gradually with consecutive laser-plasma events without gas flow. The results show that LIBS can be used to characterize organic vapor.

  12. Highly efficient inverted top emitting organic light emitting diodes using a transparent top electrode with color stability on viewing angle

    SciTech Connect (OSTI)

    Kim, Jung-Bum; Lee, Jeong-Hwan; Moon, Chang-Ki; Kim, Jang-Joo, E-mail: jjkim@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of)

    2014-02-17

    We report a highly efficient phosphorescent green inverted top emitting organic light emitting diode with excellent color stability by using the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile/indium zinc oxide top electrode and bis(2-phenylpyridine)iridium(III) acetylacetonate as the emitter in an exciplex forming co-host system. The device shows a high external quantum efficiency of 23.4% at 1000?cd/m{sup 2} corresponding to a current efficiency of 110?cd/A, low efficiency roll-off with 21% at 10?000?cd/m{sup 2} and low turn on voltage of 2.4?V. Especially, the device showed very small color change with the variation of ?x?=?0.02, ?y?=?0.02 in the CIE 1931 coordinates as the viewing angle changes from 0 to 60. The performance of the device is superior to that of the metal/metal cavity structured device.

  13. Tower Water-Vapor Mixing Ratio (Technical Report) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Tower Water-Vapor Mixing Ratio Citation Details In-Document Search Title: Tower Water-Vapor Mixing Ratio The purpose of the Tower Water-Vapor Mixing Ratio (TWRMR) value-added ...

  14. High performance flexible top-emitting warm-white organic light-emitting devices and chromaticity shift mechanism

    SciTech Connect (OSTI)

    Shi, Hongying; Deng, Lingling; Chen, Shufen E-mail: wei-huang@njupt.edu.cn; Xu, Ying; Zhao, Xiaofei; Cheng, Fan; Huang, Wei E-mail: wei-huang@njupt.edu.cn; Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Technology, Nanjing 211816

    2014-04-15

    Flexible warm-white top-emitting organic light-emitting devices (TEOLEDs) are fabricated onto PET substrates with a simple semi-transparent cathode Sm/Ag and two-color phosphors respectively doped into a single host material TCTA. By adjusting the relative position of the orange-red EML sandwiched between the blue emitting layers, the optimized device exhibits the highest power/current efficiency of 8.07 lm/W and near 13 cd/A, with a correlated color temperature (CCT) of 4105 K and a color rendering index (CRI) of 70. In addition, a moderate chromaticity variation of (-0.025, +0.008) around warm white illumination coordinates (0.45, 0.44) is obtained over a large luminance range of 1000 to 10000 cd/m{sup 2}. The emission mechanism is discussed via delta-doping method and single-carrier device, which is summarized that the carrier trapping, the exciton quenching, the mobility change and the recombination zone alteration are negative to color stability while the energy transfer process and the blue/red/blue sandwiched structure are contributed to the color stability in our flexible white TEOLEDs.

  15. New localized/delocalized emitting state of Eu2+ in orange-emitting hexagonal EuAl2O4

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liu, Feng; Meltzer, Richard S.; Li, Xufan; Budai, John D.; Chen, Yu -Sheng; Pan, Zhengwei

    2014-11-18

    Eu2+-activated phosphors are being widely used in illuminations and displays. Some of these phosphors feature an extremely broad and red-shifted Eu2+ emission band; however, convincing explanation of this phenomenon is lacking. Here we report a new localized/delocalized emitting state of Eu2+ ions in a new hexagonal EuAl2O4 phosphor whose Eu2+ luminescence exhibits a very large bandwidth and an extremely large Stokes shift. At 77 K, two luminescent sites responsible for 550 nm and 645 nm broadband emissions are recognized, while at room temperature only the 645 nm emission band emits. The 645 nm emission exhibits a typical radiative lifetime ofmore » 1.27 μs and an unusually large Stokes shift of 0.92 eV. We identify the 645 nm emission as originating from a new type of emitting state whose composition is predominantly that of localized 4f65d character but which also contains a complementary component with delocalized conduction-band-like character. This investigation gives new insights into a unique type of Eu2+ luminescence in solids whose emission exhibits both a very large bandwidth and an extremely large Stokes shift.« less

  16. Superhydrophobic anti-ultraviolet films by doctor blade coating

    SciTech Connect (OSTI)

    Cai, Chang-Yun; Yang, Hongta; Lin, Kun-Yi Andrew

    2014-11-17

    This article reports a scalable technology for fabricating polymer films with excellent water-repelling and anti-ultraviolet properties. A roll-to-roll compatible doctor blade coating technology is utilized to prepare silica colloidal crystal-polymer composites. The silica microspheres can then be selectively removed to create flexible self-standing macroporous polymer films with crystalline arrays of pores. The void sizes are controlled by tuning the duration of a reactive ion etching process prior to the removal of the templating silica microspheres. After surface modification, superhydrophobic surface can be achieved. This study further demonstrates that the as-prepared transparent porous films with 200?nm of pores exhibit diffraction of ultraviolet lights originated from the Bragg's diffractive of light from the three-dimensional highly ordered air cavities.

  17. Enhanced Attenuation Technologies: Passive Soil Vapor Extraction

    SciTech Connect (OSTI)

    Vangelas, K.; Looney, B.; Kamath, R.; Adamson, D.; Newell, C.

    2010-03-15

    Passive soil vapor extraction (PSVE) is an enhanced attenuation (EA) approach that removes volatile contaminants from soil. The extraction is driven by natural pressure gradients between the subsurface and atmosphere (Barometric Pumping), or by renewable sources of energy such as wind or solar power (Assisted PSVE). The technology is applicable for remediating sites with low levels of contamination and for transitioning sites from active source technologies such as active soil vapor extraction (ASVE) to natural attenuation. PSVE systems are simple to design and operate and are more cost effective than active systems in many scenarios. Thus, PSVE is often appropriate as an interim-remedial or polishing strategy. Over the past decade, PSVE has been demonstrated in the U.S. and in Europe. These demonstrations provide practical information to assist in selecting, designing and implementing the technology. These demonstrations indicate that the technology can be effective in achieving remedial objectives in a timely fashion. The keys to success include: (1) Application at sites where the residual source quantities, and associated fluxes to groundwater, are relatively low; (2) Selection of the appropriate passive energy source - barometric pumping in cases with a deep vadose zone and barrier (e.g., clay) layers that separate the subsurface from the atmosphere and renewable energy assisted PSVE in other settings and where higher flow rates are required. (3) Provision of sufficient access to the contaminated vadose zones through the spacing and number of extraction wells. This PSVE technology report provides a summary of the relevant technical background, real-world case study performance, key design and cost considerations, and a scenario-based cost evaluation. The key design and cost considerations are organized into a flowchart that dovetails with the Enhanced Attenuation: Chlorinated Organics Guidance of the Interstate Technology and Regulatory Council (ITRC). The PSVE

  18. Magnetic fluorescent lamp having reduced ultraviolet self-absorption

    DOE Patents [OSTI]

    Berman, Samuel M.; Richardson, Robert W.

    1985-01-01

    The radiant emission of a mercury-argon discharge in a fluorescent lamp assembly (10) is enhanced by providing means (30) for establishing a magnetic field with lines of force along the path of electron flow through the bulb (12) of the lamp assembly, to provide Zeeman splitting of the ultraviolet spectral line. Optimum results are obtained when the magnetic field strength causes a Zeeman splitting of approximately 1.7 times the thermal line width.

  19. Durable Corrosion and Ultraviolet-Resistant Silver Mirror

    DOE Patents [OSTI]

    Jorgensen, G. J.; Gee, R.

    2006-01-24

    A corrosion and ultra violet-resistant silver mirror for use in solar reflectors; the silver layer having a film-forming protective polymer bonded thereto, and a protective shield overlay comprising a transparent multipolymer film that incorporates a UV absorber. The corrosion and ultraviolet resistant silver mirror retains spectral hemispherical reflectance and high optical clarity throughout the UV and visible spectrum when used in solar reflectors.

  20. Amplitudes and Ultraviolet Behavior of N = 8 Supergravity

    SciTech Connect (OSTI)

    Bern, Zvi; Carrasco, John Joseph; Dixon, Lance J.; Johansson, Henrik; Roiban, Radu; /Penn State U.

    2011-05-20

    In this contribution we describe computational tools that permit the evaluation of multi-loop scattering amplitudes in N = 8 supergravity, in terms of amplitudes in N = 4 super-Yang-Mills theory. We also discuss the remarkable ultraviolet behavior of N = 8 supergravity, which follows from these amplitudes, and is as good as that of N = 4 super-Yang-Mills theory through at least four loops.

  1. A Comparison of Water Vapor Quantities from Model Short-Range...

    Office of Scientific and Technical Information (OSTI)

    Comparison of Water Vapor Quantities from Model Short-Range Forecasts and ARM Observations Citation Details In-Document Search Title: A Comparison of Water Vapor Quantities from ...

  2. Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods

    DOE Patents [OSTI]

    LeToquin, Ronan P; Tong, Tao; Glass, Robert C

    2014-12-30

    Light emitting devices include a light emitting diode ("LED") and a recipient luminophoric medium that is configured to down-convert at least some of the light emitted by the LED. In some embodiments, the recipient luminophoric medium includes a first broad-spectrum luminescent material and a narrow-spectrum luminescent material. The broad-spectrum luminescent material may down-convert radiation emitted by the LED to radiation having a peak wavelength in the red color range. The narrow-spectrum luminescent material may also down-convert radiation emitted by the LED into the cyan, green or red color range.

  3. Light collection optics for measuring flux and spectrum from light-emitting devices

    DOE Patents [OSTI]

    McCord, Mark A.; DiRegolo, Joseph A.; Gluszczak, Michael R.

    2016-05-24

    Systems and methods for accurately measuring the luminous flux and color (spectra) from light-emitting devices are disclosed. An integrating sphere may be utilized to directly receive a first portion of light emitted by a light-emitting device through an opening defined on the integrating sphere. A light collector may be utilized to collect a second portion of light emitted by the light-emitting device and direct the second portion of light into the integrating sphere through the opening defined on the integrating sphere. A spectrometer may be utilized to measure at least one property of the first portion and the second portion of light received by the integrating sphere.

  4. Monitoring PVD metal vapors using laser absorption spectroscopy

    SciTech Connect (OSTI)

    Braun, D.G.; Anklam, T.M.; Berzins, L.V.; Hagans, K.G.

    1994-04-01

    Laser absorption spectroscopy (LAS) has been used by the Atomic Vapor Laser Isotope Separation (AVLIS) program for over 10 years to monitor the co-vaporization of uranium and iron in its separators. During that time, LAS has proven to be an accurate and reliable method to monitor both the density and composition of the vapor. It has distinct advantages over other rate monitors, in that it is completely non-obtrusive to the vaporization process and its accuracy is unaffected by the duration of the run. Additionally, the LAS diagnostic has been incorporated into a very successful process control system. LAS requires only a line of sight through the vacuum chamber, as all hardware is external to the vessel. The laser is swept in frequency through an absorption line of interest. In the process a baseline is established, and the line integrated density is determined from the absorption profile. The measurement requires no hardware calibration. Through a proper choice of the atomic transition, a wide range of elements and densities have been monitored (e.g. nickel, iron, cerium and gadolinium). A great deal of information about the vapor plume can be obtained from the measured absorption profiles. By monitoring different species at the same location, the composition of the vapor is measured in real time. By measuring the same density at different locations, the spatial profile of the vapor plume is determined. The shape of the absorption profile is used to obtain the flow speed of the vapor. Finally, all of the above information is used evaluate the total vaporization rate.

  5. THE ULTRAVIOLET BRIGHTEST TYPE Ia SUPERNOVA 2011de

    SciTech Connect (OSTI)

    Brown, Peter J., E-mail: pbrown@physics.tamu.edu [George P. and Cynthia Woods Mitchell Institute for Fundamental Physics and Astronomy, Texas A and M University, Department of Physics and Astronomy, 4242 TAMU, College Station, TX 77843 (United States)

    2014-11-20

    We present and discuss the ultraviolet (UV)/optical photometric light curves and absolute magnitudes of the TypeIa supernova (SN Ia) 2011de from the Swift Ultraviolet/Optical Telescope. We find it to be the UV brightest SN Ia yet observedmore than a factor of 10 brighter than normal SNe Ia in the mid-ultraviolet. We find that the UV/optical brightness and broad light curve evolution can be modeled with additional flux from the shock of the ejecta hitting a relatively large red giant companion separated by 6 10{sup 13} cm. However, the post-maximum behavior of other UV-bright SNe Ia can also be modeled in a similar manner, including objects with UV spectroscopy or pre-maximum photometry which is inconsistent with this model. This suggests that similar UV luminosities can be intrinsic or caused by other forms of shock interaction. The high velocities reported for SN 2011de make it distinct from the UV-bright ''super-Chandrasekhar'' SNe Ia and the NUV-blue group of normal SNe Ia. SN 2011de is an extreme example of the UV variations in SNe Ia.

  6. The Atomic Vapor Laser Isotope Separation Program

    SciTech Connect (OSTI)

    Not Available

    1992-11-09

    This report provides the finding and recommendations on the audit of the Atomic Vapor Laser Isotope Separation (AVLIS) program. The status of the program was assessed to determine whether the Department was achieving objectives stated in its January 1990 Plan for the Demonstration, Transition and Deployment of AVLIS Technology. Through Fiscal Year 1991, the Department had spent about $1.1 billion to develop AVLIS technology. The January 1990 plan provided for AVLIS to be far enough along by September to enable the Department to make a determination of the technical and economic feasibility of deployment. However, the milestones needed to support that determination were not met. An estimated $550 million would be needed to complete AVLIS engineering development and related testing prior to deployment. The earliest possible deployment date has slipped to beyond the year 2000. It is recommended that the Department reassess the requirement for AVLIS in light of program delays and changes that have taken place in the enrichment market since January 1990. Following the reassessment, a decision should be made to either fully support and promote the actions needed to complete AVLIS development or discontinue support for the program entirely. Management`s position is that the Department will successfully complete the AVLIS technology demonstration and that the program should continue until it can be transferred to a Government corporation. Although the auditors recognize that AVLIS may be transferred, there are enough technical and financial uncertainties that a thorough assessment is warranted.

  7. Optimization of Xenon Difluoride Vapor Delivery

    SciTech Connect (OSTI)

    Sweeney, Joseph; Marganski, Paul; Kaim, Robert; Wodjenski, Mike; Gregg, John; Yedave, Sharad; Sergi, Steve; Bishop, Steve; Eldridge, David; Zou Peng [ATMI, Inc., Danbury, Connecticut 06810 (United States)

    2008-11-03

    Xenon difluoride (XeF{sub 2}) has been shown to provide many process benefits when used as a daily maintenance recipe for ion implant. Regularly flowing XeF{sub 2} into the ion source cleans the deposits generated by ion source operation. As a result, significant increases in productivity have been demonstrated. However, XeF{sub 2} is a toxic oxidizer that must be handled appropriately. Furthermore, it is a low vapor pressure solid under standard conditions ({approx}4.5 torr at 25 deg. C). These aspects present unique challenges for designing a package for delivering the chemistry to an ion implanter. To address these challenges, ATMI designed a high-performance, re-usable cylinder for dispensing XeF{sub 2} in an efficient and reliable manner. Data are presented showing specific attributes of the cylinder, such as the importance of internal heat transfer media and the cylinder valve size. The impact of mass flow controller (MFC) selection and ion source tube design on the flow rate of XeF{sub 2} are also discussed. Finally, cylinder release rate data are provided.

  8. Catalytic Reactor For Oxidizing Mercury Vapor

    DOE Patents [OSTI]

    Helfritch, Dennis J.

    1998-07-28

    A catalytic reactor (10) for oxidizing elemental mercury contained in flue gas is provided. The catalyst reactor (10) comprises within a flue gas conduit a perforated corona discharge plate (30a, b) having a plurality of through openings (33) and a plurality of projecting corona discharge electrodes (31); a perforated electrode plate (40a, b, c) having a plurality of through openings (43) axially aligned with the through openings (33) of the perforated corona discharge plate (30a, b) displaced from and opposing the tips of the corona discharge electrodes (31); and a catalyst member (60a, b, c, d) overlaying that face of the perforated electrode plate (40a, b, c) opposing the tips of the corona discharge electrodes (31). A uniformly distributed corona discharge plasma (1000) is intermittently generated between the plurality of corona discharge electrode tips (31) and the catalyst member (60a, b, c, d) when a stream of flue gas is passed through the conduit. During those periods when corona discharge (1000) is not being generated, the catalyst molecules of the catalyst member (60a, b, c, d) adsorb mercury vapor contained in the passing flue gas. During those periods when corona discharge (1000) is being generated, ions and active radicals contained in the generated corona discharge plasma (1000) desorb the mercury from the catalyst molecules of the catalyst member (60a, b, c, d), oxidizing the mercury in virtually simultaneous manner. The desorption process regenerates and activates the catalyst member molecules.

  9. Numerical simulation of water injection into vapor-dominated reservoirs

    SciTech Connect (OSTI)

    Pruess, K.

    1995-01-01

    Water injection into vapor-dominated reservoirs is a means of condensate disposal, as well as a reservoir management tool for enhancing energy recovery and reservoir life. We review different approaches to modeling the complex fluid and heat flow processes during injection into vapor-dominated systems. Vapor pressure lowering, grid orientation effects, and physical dispersion of injection plumes from reservoir heterogeneity are important considerations for a realistic modeling of injection effects. An example of detailed three-dimensional modeling of injection experiments at The Geysers is given.

  10. In-well vapor stripping drilling and characterization work plan

    SciTech Connect (OSTI)

    Koegler, K.J.

    1994-03-13

    This work plan provides the information necessary for drilling, sampling, and hydrologic testing of wells to be completed in support of a demonstration of the in-well vapor stripping system. The in-well vapor stripping system is a remediation technology designed to preferentially extract volatile organic compounds (VOCs) from contaminated groundwater by converting them to a vapor phase. Air-lift pumping is used to lift and aerate groundwater within the well. The volatiles escaping the aerated water are drawn off by a slight vacuum and treated at the surface while the water is allowed to infiltrate the vadose zone back to the watertable.

  11. Solid-state radiation-emitting compositions and devices

    DOE Patents [OSTI]

    Ashley, Carol S.; Brinker, C. Jeffrey; Reed, Scott; Walko, Robert J.

    1992-01-01

    The invention relates to a composition for the volumetric generation of radiation, wherein a first substance functions as a source of exciting radiation, and a second substance interacts with the exciting radiation to provide a second radiation. The compositions comprise a porous substrate which is loaded with: a source of exciting radiation, a component capable of emitting radiation upon interaction with the exciting radiation, or both. Preferably, the composition is an aerogel substrate loaded with both a source of exciting radiation, such as tritium, and a component capable of interacting with the exciting radiation, e.g., a phosphor, to produce radiation of a second energy.

  12. Solid-state radiation-emitting compositions and devices

    DOE Patents [OSTI]

    Ashley, C.S.; Brinker, C.J.; Reed, S.; Walko, R.J.

    1992-08-11

    The invention relates to a composition for the volumetric generation of radiation, wherein a first substance functions as a source of exciting radiation, and a second substance interacts with the exciting radiation to provide a second radiation. The compositions comprise a porous substrate which is loaded with: a source of exciting radiation, a component capable of emitting radiation upon interaction with the exciting radiation, or both. Preferably, the composition is an aerogel substrate loaded with both a source of exciting radiation, such as tritium, and a component capable of interacting with the exciting radiation, e.g., a phosphor, to produce radiation of a second energy. 4 figs.

  13. High efficiency III-nitride light-emitting diodes

    DOE Patents [OSTI]

    Crawford, Mary; Koleske, Daniel; Cho, Jaehee; Zhu, Di; Noemaun, Ahmed; Schubert, Martin F; Schubert, E. Fred

    2013-05-28

    Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

  14. Direct analysis of air filter samples for alpha emitting isotopes

    SciTech Connect (OSTI)

    Mohagheghi, A.H.; Ghanbari, F.; Ebara, S.B.; Enghauser, M.E. [Sandia National Labs., Albuquerque, NM (United States); Bakhtiar, S.N. [Westinghouse WIPP, Carlsbad, NM (United States)

    1997-04-01

    The traditional method for determination of alpha emitting isotopes on air filters has been to process the samples by radiochemical methods. However, this method is too slow for cases of incidents involving radioactive materials where the determination of personnel received dose is urgent. A method is developed to directly analyze the air filters taken from personal and area air monitors. The site knowledge is used in combination with alpha spectral information to identify isotopes. A mathematical function is developed to estimate the activity for each isotope. The strengths and weaknesses of the method are discussed.

  15. Poly (p-phenyleneneacetylene) light-emitting diodes

    DOE Patents [OSTI]

    Shinar, Joseph; Swanson, Leland S.; Lu, Feng; Ding, Yiwei; Barton, Thomas J.; Vardeny, Zeev V.

    1994-10-04

    Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes.

  16. Poly (p-phenyleneacetylene) light-emitting diodes

    DOE Patents [OSTI]

    Shinar, J.; Swanson, L.S.; Lu, F.; Ding, Y.; Barton, T.J.; Vardeny, Z.V.

    1994-10-04

    Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes. 8 figs.

  17. Fabrication of poly(p-phenyleneacetylene) light-emitting diodes

    DOE Patents [OSTI]

    Shinar, Joseph; Swanson, Leland S.; Lu, Feng; Ding, Yiwei

    1994-08-02

    Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as A1 or A1/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes.

  18. Fabrication of poly(p-phenyleneacetylene) light-emitting diodes

    DOE Patents [OSTI]

    Shinar, J.; Swanson, L.S.; Lu, F.; Ding, Y.

    1994-08-02

    Acetylene-containing poly(p-phenyleneacetylene) (PPA)-based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes. 8 figs.

  19. Organimetallic Fluorescent Complex Polymers For Light Emitting Applications

    DOE Patents [OSTI]

    Shi, Song Q.; So, Franky

    1997-10-28

    A fluorescent complex polymer with fluorescent organometallic complexes connected by organic chain spacers is utilized in the fabrication of light emitting devices on a substantially transparent planar substrate by depositing a first conductive layer having p-type conductivity on the planar surface of the substrate, depositing a layer of a hole transporting and electron blocking material on the first conductive layer, depositing a layer of the fluorescent complex polymer on the layer of hole transporting and electron blocking material as an electron transporting emissive layer and depositing a second conductive layer having n-type conductivity on the layer of fluorescent complex polymer.

  20. Anisotropy of radiation emitted from planar wire arrays

    SciTech Connect (OSTI)

    Kantsyrev, V. L.; Esaulov, A. A.; Safronova, A. S.; Williamson, K. M.; Osborne, G. C.; Shrestha, I. K.; Weller, M. E.; Shlyaptseva, V. V.; Chuvatin, A. S.; Rudakov, L. I.; Velikovich, A.

    2013-07-15

    The planar wire array (PWA) is a promising load for new multi-source inertial confinement fusion (ICF) hohlraums [B. Jones et al., Phys. Rev. Lett. 104, 125001 (2010)]. The hohlraum radiation symmetry is an important issue for ICF. It was found that extreme ultraviolet and sub-keV photon emission from PWAs may have considerable anisotropy in the load azimuthal plane. This experimental result is obtained on the UNR 1–1.7 MA Zebra generator. The time-dependent anisotropy effect is detected. This feature is studied in 2D numerical simulations and can be explained by initial anisotropy of implosion of those non-cylindrical loads radiating essentially as surface sources in sub-keV quanta and also by radiation absorption in cold magnetized plasma tails forming in the direction of magnetic compression.

  1. Direct synthesis of large area graphene on insulating substrate by gallium vapor-assisted chemical vapor deposition

    SciTech Connect (OSTI)

    Murakami, Katsuhisa Hiyama, Takaki; Kuwajima, Tomoya; Fujita, Jun-ichi; Tanaka, Shunsuke; Hirukawa, Ayaka; Kano, Emi; Takeguchi, Masaki

    2015-03-02

    A single layer of graphene with dimensions of 20?mm??20?mm was grown directly on an insulating substrate by chemical vapor deposition using Ga vapor catalysts. The graphene layer showed highly homogeneous crystal quality over a large area on the insulating substrate. The crystal quality of the graphene was measured by Raman spectroscopy and was found to improve with increasing Ga vapor density on the reaction area. High-resolution transmission electron microscopy observations showed that the synthesized graphene had a perfect atomic-scale crystal structure within its grains, which ranged in size from 50?nm to 200?nm.

  2. Final Scientific/Technical Report. A closed path methane and water vapor gas analyzer

    SciTech Connect (OSTI)

    Xu, Liukang; McDermitt, Dayle; Anderson, Tyler; Riensche, Brad; Komissarov, Anatoly; Howe, Julie

    2012-02-01

    Robust, economical, low-power and reliable closed-path methane (CH4), carbon dioxide (CO2), and water vapor (H2O) analyzers suitable for long-term measurements are not readily available commercially. Such analyzers are essential for quantifying the amount of CH4 and CO2 released from various ecosystems (wetlands, rice paddies, forests, etc.) and other surface contexts (e.g. landfills, animal husbandry lots, etc.), and for understanding the dynamics of the atmospheric CH4 and CO2 budget and their impact on climate change and global warming. The purpose of this project is to develop a closed-path methane, carbon dioxide gas and water vapor analyzer capable of long-term measurements in remote areas for global climate change and environmental research. The analyzer will be capable of being deployed over a wide range of ecosystems to understand methane and carbon dioxide exchange between the atmosphere and the surface. Measurements of methane and carbon dioxide exchange need to be made all year-round with limited maintenance requirements. During this Phase II effort, we successfully completed the design of the electronics, optical bench, trace gas detection method and mechanical infrastructure. We are using the technologies of two vertical cavity surface emitting lasers, a multiple-pass Herriott optical cell, wavelength modulation spectroscopy and direct absorption to measure methane, carbon dioxide, and water vapor. We also have designed the instrument application software, Field Programmable Gate Array (FPGA), along with partial completion of the embedded software. The optical bench has been tested in a lab setting with very good results. Major sources of optical noise have been identified and through design, the optical noise floor is approaching -60dB. Both laser modules can be temperature controlled to help maximize the stability of the analyzer. Additionally, a piezo electric transducer has been

  3. Characterization of urania vaporization with transpiration coupled thermogravimetry

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    McMurray, J. W.

    2015-12-05

    Determining equilibrium vapor pressures of materials is made easier by transpiration measurements. However, the traditional technique involves condensing the volatiles entrained in a carrier gas outside of the hot measurement zone. One potential problem is deposition en route to a cooled collector. Thermogravimetric analysis (TGA) can be used to measure in situ mass loss due to vaporization and therefore obviate the need to analyze the entire gas train due to premature plating of vapor species. Therefore, a transpiration coupled TGA technique was used to determine equilibrium pressures of UO3 gas over fluorite structure UO2+x and U3O8 at T = (1573more » and 1773) K. Moreover, we compared to calculations from models and databases in the open literature. Our study gives clarity to the thermochemical data for UO3 gas and validates the mass loss transpiration method using thermogravimetry for determining equilibrium vapor pressures of non-stoichiometric oxides.« less

  4. Characterization of urania vaporization with transpiration coupled thermogravimetry

    SciTech Connect (OSTI)

    McMurray, J. W.

    2015-12-05

    Determining equilibrium vapor pressures of materials is made easier by transpiration measurements. However, the traditional technique involves condensing the volatiles entrained in a carrier gas outside of the hot measurement zone. One potential problem is deposition en route to a cooled collector. Thermogravimetric analysis (TGA) can be used to measure in situ mass loss due to vaporization and therefore obviate the need to analyze the entire gas train due to premature plating of vapor species. Therefore, a transpiration coupled TGA technique was used to determine equilibrium pressures of UO3 gas over fluorite structure UO2+x and U3O8 at T = (1573 and 1773) K. Moreover, we compared to calculations from models and databases in the open literature. Our study gives clarity to the thermochemical data for UO3 gas and validates the mass loss transpiration method using thermogravimetry for determining equilibrium vapor pressures of non-stoichiometric oxides.

  5. Use Vapor Recompression to Recover Low-Pressure Waste Steam,...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... Conduct a Pinch Analysis Based on the actual application, there may be other options to vapor recompres- sion. The industry best practice is to conduct a pinch analysis on the ...

  6. ARM - Field Campaign - Single Frequency GPS Water Vapor Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govCampaignsSingle Frequency GPS Water Vapor Network ARM Data Discovery Browse Data Comments? We would love to hear from you Send us a note below or call us at 1-888-ARM-DATA....

  7. Systems and methods for generation of hydrogen peroxide vapor

    DOE Patents [OSTI]

    Love, Adam H; Eckels, Joel Del; Vu, Alexander K; Alcaraz, Armando; Reynolds, John G

    2014-12-02

    A system according to one embodiment includes a moisture trap for drying air; at least one of a first container and a second container; and a mechanism for at least one of: bubbling dried air from the moisture trap through a hydrogen peroxide solution in the first container for producing a hydrogen peroxide vapor, and passing dried air from the moisture trap into a headspace above a hydrogen peroxide solution in the second container for producing a hydrogen peroxide vapor. A method according one embodiment includes at least one of bubbling dried air through a hydrogen peroxide solution in a container for producing a first hydrogen peroxide vapor, and passing dried air from the moisture trap into a headspace above the hydrogen peroxide solution in a container for producing a second hydrogen peroxide vapor. Additional systems and methods are also presented.

  8. University of Oregon: GPS-based Precipitable Water Vapor (PWV)

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Vignola, F.; Andreas, A.

    A partnership with the University of Oregon and U.S. Department of Energy's National Renewable Energy Laboratory (NREL) to collect Precipitable Water Vapor (PWV) data to compliment existing resource assessment data collection by the university.

  9. University of Oregon: GPS-based Precipitable Water Vapor (PWV)

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Vignola, F.; Andreas, A.

    2013-08-22

    A partnership with the University of Oregon and U.S. Department of Energy's National Renewable Energy Laboratory (NREL) to collect Precipitable Water Vapor (PWV) data to compliment existing resource assessment data collection by the university.

  10. Investigation of odd-order nonlinear susceptibilities in atomic vapors

    SciTech Connect (OSTI)

    Yan, Yaqi; Shaanxi Key Laboratory of Information Photonic Technique, Xi’an Jiaotong University, Xi’an 710049; Teaching and Research Section of Maths and Physics, Guangzhou Commanding Academy of Chinese People’s Armed Police Force, Guangzhou, 510440 ; Wu, Zhenkun; Si, Jinhai; Yan, Lihe; Zhang, Yiqi; Yuan, Chenzhi; Sun, Jia; Shaanxi Key Laboratory of Information Photonic Technique, Xi’an Jiaotong University, Xi’an 710049 ; Zhang, Yanpeng; Shaanxi Key Laboratory of Information Photonic Technique, Xi’an Jiaotong University, Xi’an 710049

    2013-06-15

    We theoretically deduce the macroscopic symmetry constraints for arbitrary odd-order nonlinear susceptibilities in homogeneous media including atomic vapors for the first time. After theoretically calculating the expressions using a semiclassical method, we demonstrate that the expressions for third- and fifth-order nonlinear susceptibilities for undressed and dressed four- and six-wave mixing (FWM and SWM) in atomic vapors satisfy the macroscopic symmetry constraints. We experimentally demonstrate consistence between the macroscopic symmetry constraints and the semiclassical expressions for atomic vapors by observing polarization control of FWM and SWM processes. The experimental results are in reasonable agreement with our theoretical calculations. -- Highlights: •The macroscopic symmetry constraints are deduced for homogeneous media including atomic vapors. •We demonstrate that odd-order nonlinear susceptibilities satisfy the constraints. •We experimentally demonstrate the deduction in part.

  11. Suppressing spectral diffusion of emitted photons with optical pulses

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Fotso, H. F.; Feiguin, A. E.; Awschalom, D. D.; Dobrovitski, V. V.

    2016-01-22

    In many quantum architectures the solid-state qubits, such as quantum dots or color centers, are interfaced via emitted photons. However, the frequency of photons emitted by solid-state systems exhibits slow uncontrollable fluctuations over time (spectral diffusion), creating a serious problem for implementation of the photon-mediated protocols. Here we show that a sequence of optical pulses applied to the solid-state emitter can stabilize the emission line at the desired frequency. We demonstrate efficiency, robustness, and feasibility of the method analytically and numerically. Taking nitrogen-vacancy center in diamond as an example, we show that only several pulses, with the width of 1more » ns, separated by few ns (which is not difficult to achieve) can suppress spectral diffusion. As a result, our method provides a simple and robust way to greatly improve the efficiency of photon-mediated entanglement and/or coupling to photonic cavities for solid-state qubits.« less

  12. Organic light-emitting devices using spin-dependent processes

    DOE Patents [OSTI]

    Vardeny, Z. Valy; Wohlgenannt, Markus

    2010-03-23

    The maximum luminous efficiency of organic light-emitting materials is increased through spin-dependent processing. The technique is applicable to all electro-luminescent processes in which light is produced by singlet exciton decay, and all devices which use such effects, including LEDs, super-radiant devices, amplified stimulated emission devices, lasers, other optical microcavity devices, electrically pumped optical amplifiers, and phosphorescence (Ph) based light emitting devices. In preferred embodiments, the emissive material is doped with an impurity, or otherwise modified, to increase the spin-lattice relaxation rate (i.e., decrease the spin-lattice time), and hence raise the efficiency of the device. The material may be a polymer, oligomer, small molecule, single crystal, molecular crystal, or fullerene. The impurity is preferably a magnetic or paramagnetic substance. The invention is applicable to IR, UV, and other electromagnetic radiation generation and is thus not limited to the visible region of the spectrum. The methods of the invention may also be combined with other techniques used to improve device performance.

  13. PROJECT PROFILE: Stable Perovskite Solar Cells via Chemical Vapor Deposition

    Broader source: Energy.gov [DOE]

    This project is focused on novel approaches to remove risk related to the development of hybrid perovskite solar cells (HPSCs). Researchers will synthesize a new and chemically stable hybrid organic-inorganic perovskite that eliminates decomposition of the absorber layer upon exposure to water vapor, which is a chief obstacle to widespread use of HPSC technology. They will also demonstrate a unique and industrially-scalable chemical vapor deposition method without halides or iodine, which are the main contributors to perovskite degradation.

  14. Injection locked oscillator system for pulsed metal vapor lasers

    DOE Patents [OSTI]

    Warner, Bruce E.; Ault, Earl R.

    1988-01-01

    An injection locked oscillator system for pulsed metal vapor lasers is disclosed. The invention includes the combination of a seeding oscillator with an injection locked oscillator (ILO) for improving the quality, particularly the intensity, of an output laser beam pulse. The present invention includes means for matching the first seeder laser pulses from the seeding oscillator to second laser pulses of a metal vapor laser to improve the quality, and particularly the intensity, of the output laser beam pulse.

  15. White top-emitting organic light-emitting diodes with solution-processed nano-particle scattering layers

    SciTech Connect (OSTI)

    Schaefer, Tim; Schwab, Tobias; Lenk, Simone; Gather, Malte C.

    2015-12-07

    A random scattering approach to enhance light extraction in white top-emitting organic light-emitting diodes (OLEDs) is reported. Through solution processing from fluorinated solvents, a nano-particle scattering layer (NPSL) can be deposited directly on top of small molecule OLEDs without affecting their electrical performance. The scattering length for light inside the NPSL is determined from transmission measurements and found to be in agreement with Mie scattering theory. Furthermore, the dependence of the light outcoupling enhancement on electron transport layer thickness is studied. Depending on the electron transport layer thickness, the NPSL enhances the external quantum efficiency of the investigated white OLEDs by between 1.5 and 2.3-fold. For a device structure that has been optimized prior to application of the NPSL, the maximum external quantum efficiency is improved from 4.7% to 7.4% (1.6-fold improvement). In addition, the scattering layer strongly reduces the undesired shift in emission color with viewing angle.

  16. Tank 241-T-111 headspace gas and vapor characterization results for samples collected in January 1995

    SciTech Connect (OSTI)

    Huckaby, J.L.; Bratzel, D.R.

    1995-09-01

    Significant changes have been made to all of the original vapor characterization reports. This report documents specific headspace gas and vapor characterization results for all vapor sampling events to date. In addition, changes have been made to the original vapor reports to qualify the data based on quality assurance issues associated with the performing laboratories.

  17. Tank 241-U-111 headspace gas and vapor characterization results for samples collected in February 1995

    SciTech Connect (OSTI)

    Huckaby, J.L.; Bratzel, D.R.

    1995-09-01

    Significant changes have been made to all of the original vapor characterization reports. This report documents specific headspace gas and vapor characterization results for all vapor sampling events to date. In addition, changes have been made to the original vapor reports to qualify the data based on quality assurance issues associated with the performing laboratories.

  18. Tank 241-S-111 headspace gas and vapor characterization results for samples collected in March 1995

    SciTech Connect (OSTI)

    Huckaby, J.L.; Bratzel, D.R.

    1995-09-01

    Significant changes have been made to all of the original vapor characterization reports. This report documents specific headspace gas and vapor characterization results for all vapor sampling events to date. In addition, changes have been made to the original vapor reports to qualify the data based on quality assurance issues associated with the performing laboratories.

  19. ARM: Microwave Radiometer data (MWR Profiles - QME), water vapor, temp, cloud liquid water, precip water retrievals

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Maria Cadeddu

    Microwave Radiometer data (MWR Profiles - QME), water vapor, temp, cloud liquid water, precip water retrievals

  20. ARM: Microwave Radiometer data (MWR Profiles - QME), water vapor, temp, cloud liquid water, precip water retrievals

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Maria Cadeddu

    2004-02-19

    Microwave Radiometer data (MWR Profiles - QME), water vapor, temp, cloud liquid water, precip water retrievals

  1. Bright high-repetition-rate source of narrowband extreme-ultraviolet...

    Office of Scientific and Technical Information (OSTI)

    This enhancement exceeds the expected dipole scaling, evidencing improved phase-matching for ultraviolet-driven HHG under tight focusing as corroborated by simulations. Spectral ...

  2. Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes

    SciTech Connect (OSTI)

    Yang Yu; Wang Lian; Yan He; Jin Shu; Marks, Tobin J.; Li Shuyou

    2006-07-31

    Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In{sub 2}O{sub 3} (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at. %. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 {omega}/{open_square}, and the average optical transmittance is 87.1% in the 400-700 nm region. The overall figure of merit ({phi}=T{sup 10}/R{sub sheet}) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices.

  3. Highly uniform and reproducible visible to near-infrared vertical-cavity surface-emitting lasers grown by MOVPE

    SciTech Connect (OSTI)

    Hou, H.Q.; Choquette, K.D.; Hammons, B.E.; Breiland, W.G.; Crawford, M.H.; Lear, K.L.

    1997-05-01

    The authors present the growth and characterization of vertical-cavity surface emitting lasers (VCSELs) from visible to near-infrared wavelength grown by metalorganic vapor phase epitaxy. Discussions on the growth issue of VCSEL materials include the control on growth rate and composition using an in situ normal-incidence reflectometer, optimization of ultra-high material uniformity, and comprehensive p- and n-type doping study in AlGaAs by CCl{sub 4} and Si{sub 2}H{sub 6} over the entire Al composition range. They will also demonstrate the recent achievements of selectively-oxidized VCSELs which include the first room-temperature continuous-wave demonstration of all-AlGaAs 700-nm red VCSELs, high-performance n-side up 850-nm VCSELs, and low threshold current and low-threshold voltage 1.06 {micro}m VCSELs using InGaAs/GaAsP strain-compensated quantum wells.

  4. Influences of wide-angle and multi-beam interference on the chromaticity and efficiency of top-emitting white organic light-emitting diodes

    SciTech Connect (OSTI)

    Deng, Lingling; Zhou, Hongwei; Chen, Shufen Liu, Bin; Wang, Lianhui; Shi, Hongying

    2015-02-28

    Wide-angle interference (WI) and multi-beam interference (MI) in microcavity are analyzed separately to improve chromaticity and efficiency of the top-emitting white organic light-emitting diodes (TWOLEDs). A classic electromagnetic theory is used to calculate the resonance intensities of WI and MI in top-emitting organic light-emitting diodes (TOLEDs) with influence factors (e.g., electrodes and exciton locations) being considered. The role of WI on the performances of TOLEDs is revealed through using ?-doping technology and comparing blue and red EML positions in top-emitting and bottom-emitting devices. The blue light intensity significantly increases and the chromaticity of TWOLEDs is further improved with the use of enhanced WI (the blue emitting layer moving towards the reflective electrode) in the case of a weak MI. In addition, the effect of the thicknesses of light output layer and carrier transport layers on WI and MI are also investigated. Apart from the microcavity effect, other factors, e.g., carrier balance and carrier recombination regions are considered to obtain TWOLEDs with high efficiency and improved chromaticity near white light equal-energy point.

  5. Radiation damage resistance of AlGaN detectors for applications in the extreme-ultraviolet spectral range

    SciTech Connect (OSTI)

    Barkusky, Frank; Peth, Christian; Bayer, Armin; Mann, Klaus; John, Joachim; Malinowski, Pawel E.

    2009-09-15

    We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky-photodiode-based detectors. AlGaN layers were grown using metal-organic chemical vapor deposition (MOCVD) on Si(111) wafers. The diodes were characterized at a wavelength of 13.5 nm using a table-top extreme-ultraviolet (EUV) radiation source, consisting of a laser-produced xenon plasma and a Schwarzschild objective. The responsivity of the diodes was tested between EUV energies ranging from 320 nJ down to several picojoules. For low fluences, a linear responsivity of 7.14 mAs/J could be determined. Saturation starts at approximately 1 nJ, merging into a linear response of 0.113 mAs/J, which could be attributed to the photoeffect on the Au electrodes on top of the diode. Furthermore, degradation tests were performed up to an absolute dose of 3.3x10{sup 19} photons/cm{sup 2}. AlGaN photodiodes were compared to commercially available silicon-based photodetectors. For AlGaN diodes, responsivity does not change even for the highest EUV dose, whereas the response of the Si diode decreases linearly to {approx}93% after 2x10{sup 19} photons/cm{sup 2}.

  6. Large area, surface discharge pumped, vacuum ultraviolet light source

    DOE Patents [OSTI]

    Sze, R.C.; Quigley, G.P.

    1996-12-17

    Large area, surface discharge pumped, vacuum ultraviolet (VUV) light source is disclosed. A contamination-free VUV light source having a 225 cm{sup 2} emission area in the 240-340 nm region of the electromagnetic spectrum with an average output power in this band of about 2 J/cm{sup 2} at a wall-plug efficiency of approximately 5% is described. Only ceramics and metal parts are employed in this surface discharge source. Because of the contamination-free, high photon energy and flux, and short pulse characteristics of the source, it is suitable for semiconductor and flat panel display material processing. 3 figs.

  7. Large area, surface discharge pumped, vacuum ultraviolet light source

    DOE Patents [OSTI]

    Sze, Robert C.; Quigley, Gerard P.

    1996-01-01

    Large area, surface discharge pumped, vacuum ultraviolet (VUV) light source. A contamination-free VUV light source having a 225 cm.sup.2 emission area in the 240-340 nm region of the electromagnetic spectrum with an average output power in this band of about 2 J/cm.sup.2 at a wall-plug efficiency of approximately 5% is described. Only ceramics and metal parts are employed in this surface discharge source. Because of the contamination-free, high photon energy and flux, and short pulse characteristics of the source, it is suitable for semiconductor and flat panel display material processing.

  8. MoRu/Be multilayers for extreme ultraviolet applications

    DOE Patents [OSTI]

    Bajt, Sasa C.; Wall, Mark A.

    2001-01-01

    High reflectance, low intrinsic roughness and low stress multilayer systems for extreme ultraviolet (EUV) lithography comprise amorphous layers MoRu and crystalline Be layers. Reflectance greater than 70% has been demonstrated for MoRu/Be multilayers with 50 bilayer pairs. Optical throughput of MoRu/Be multilayers can be 30-40% higher than that of Mo/Be multilayer coatings. The throughput can be improved using a diffusion barrier to make sharper interfaces. A capping layer on the top surface of the multilayer improves the long-term reflectance and EUV radiation stability of the multilayer by forming a very thin native oxide that is water resistant.

  9. Self-cleaning optic for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Klebanoff, Leonard E.; Stulen, Richard H.

    2003-12-16

    A multilayer reflective optic or mirror for lithographic applications, and particularly extreme ultraviolet (EUV) lithography, having a surface or "capping" layer which in combination with incident radiation and gaseous molecular species such as O.sub.2, H.sub.2, H.sub.2 O provides for continuous cleaning of carbon deposits from the optic surface. The metal capping layer is required to be oxidation resistant and capable of transmitting at least 90% of incident EUV radiation. Materials for the capping layer include Ru, Rh, Pd, Ir, Pt and Au and combinations thereof.

  10. Broadband extreme ultraviolet probing of transient gratings in vanadium dioxide

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sistrunk, Emily; Lawrence Livermore National Lab.; Grilj, Jakob; Ecole Polytechnique Federal de Lausanne; Jeong, Jaewoo; Samant, Mahesh G.; Gray, Alexander X.; Temple Univ. Philadelphia, PA; Drr, Hermann A.; Parkin, Stuart S. P.; et al

    2015-02-11

    Nonlinear spectroscopy in the extreme ultraviolet (EUV) and soft x-ray spectral range offers the opportunity for element selective probing of ultrafast dynamics using core-valence transitions (Mukamel et al., Acc. Chem. Res. 42, 553 (2009)). We demonstrate a step on this path showing core-valence sensitivity in transient grating spectroscopy with EUV probing. We study the optically induced insulator-to-metal transition (IMT) of a VO? film with EUV diffraction from the optically excited sample. The VO? exhibits a change in the 3p-3d resonance of V accompanied by an acoustic response. Due to the broadband probing we are able to separate the two features.

  11. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  12. High numerical aperture projection system for extreme ultraviolet projection lithography

    DOE Patents [OSTI]

    Hudyma, Russell M.

    2000-01-01

    An optical system is described that is compatible with extreme ultraviolet radiation and comprises five reflective elements for projecting a mask image onto a substrate. The five optical elements are characterized in order from object to image as concave, convex, concave, convex, and concave mirrors. The optical system is particularly suited for ring field, step and scan lithography methods. The invention uses aspheric mirrors to minimize static distortion and balance the static distortion across the ring field width which effectively minimizes dynamic distortion. The present invention allows for higher device density because the optical system has improved resolution that results from the high numerical aperture, which is at least 0.14.

  13. ULTRAVIOLET RADIATION INSIDE INTERSTELLAR GRAIN AGGREGATES. III. FLUFFY GRAINS

    SciTech Connect (OSTI)

    Cacciola, Adriano; Saija, Rosalba; Borghese, Ferdinando; Denti, Paolo; Cecchi-Pestellini, Cesare; Iati, Maria Antonia

    2009-08-20

    We study the problem of light depolarization within fluffy interstellar dust grains, in which coagulation generates interstitial cavities partly filled with icy condensed gas. A significant amount of elliptical polarized ultraviolet radiation may be generated in situ by geometry-induced depolarization within the cavities. The behavior of the depolarization is studied both by changing the orientation of the aggregates and by changing chemical composition and size of the subunits forming the aggregate. We found that a considerable amount of depolarization occurs within the ice mantles of the subunits, provided their thickness is not too large. We discuss the implications of these results for chiral selection in space.

  14. FIRST DETECTION OF ULTRAVIOLET EMISSION FROM A DETACHED DUST SHELL: GALAXY EVOLUTION EXPLORER OBSERVATIONS OF THE CARBON ASYMPTOTIC GIANT BRANCH STAR U Hya

    SciTech Connect (OSTI)

    Sanchez, Enmanuel; Montez, Rodolfo Jr.; Stassun, Keivan G.; Ramstedt, Sofia

    2015-01-10

    We present the discovery of an extended ring of ultraviolet (UV) emission surrounding the asymptotic giant branch (AGB) star U Hya in archival observations performed by the Galaxy Evolution Explorer. This is the third discovery of extended UV emission from a carbon AGB star and the first from an AGB star with a detached shell. From imaging and photometric analysis of the FUV and NUV images, we determined that the UV ring has a radius of ∼110'', thus indicating that the emitting material is likely associated with the detached shell seen in the infrared. We find that scattering of the central point source of NUV and FUV emission by the dust shell is negligible. Moreover, we find that scattering of the interstellar radiation field by the dust shell can contribute at most ∼10% of the FUV flux. Morphological and photometric evidence suggests that shocks caused by the star's motion through space and, possibly, shock-excited H{sub 2} molecules are the most likely origins of the UV flux. In contrast to previous examples of extended UV emission from AGB stars, the extended UV emission from U Hya does not show a bow-shock-like structure, which is consistent with a lower space velocity and lower interstellar medium density. This suggests the detached dust shell is the source of the UV-emitting material and can be used to better understand the formation of detached shells.

  15. Solid-state radiation-emitting compositions and devices

    DOE Patents [OSTI]

    Ashley, Carol S.; Brinker, C. Jeffrey; Reed, Scott; Shepodd, Timothy J.; Leonard, Leroy E.; Ellefson, Robert E.; Gill, John T.; Walko, Robert J.; Renschler, Clifford L.

    1992-01-01

    The invention relates to a composition for the volumetric generation of radiation, wherein a first substance functions as a source of exciting radiation, and a second substance interacts with the exciting radiation to provide a second radiation. The compositions comprise a porous substrate which is loaded with: a source of exciting radiation, a component capable of emitting radiation upon interaction with the exciting radiation, or both. In the composition, a composite is formed from a carrier material and at least one of the source of the exciting radiation or the component which is capable of interacting with the exciting radiation. The composite is then employed for loading a porous substrate, preferably an aerogel substrate.

  16. Method of electroplating a conversion electron emitting source on implant

    DOE Patents [OSTI]

    Srivastava, Suresh C.; Gonzales, Gilbert R.; Adzic, Radoslav; Meinken, George E.

    2012-02-14

    Methods for preparing an implant coated with a conversion electron emitting source (CEES) are disclosed. The typical method includes cleaning the surface of the implant; placing the implant in an activating solution comprising hydrochloric acid to activate the surface; reducing the surface by H.sub.2 evolution in H.sub.2SO.sub.4 solution; and placing the implant in an electroplating solution that includes ions of the CEES, HCl, H.sub.2SO.sub.4, and resorcinol, gelatin, or a combination thereof. Alternatively, before tin plating, a seed layer is formed on the surface. The electroplated CEES coating can be further protected and stabilized by annealing in a heated oven, by passivation, or by being covered with a protective film. The invention also relates to a holding device for holding an implant, wherein the device selectively prevents electrodeposition on the portions of the implant contacting the device.

  17. Electrically pumped edge-emitting photonic bandgap semiconductor laser

    DOE Patents [OSTI]

    Lin, Shawn-Yu; Zubrzycki, Walter J.

    2004-01-06

    A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

  18. Electroluminescence property of organic light emitting diode (OLED)

    SciTech Connect (OSTI)

    zdemir, Orhan; Kavak, Pelin; Saatci, A. Evrim; Gkdemir, F. P?nar; Menda, U. Deneb; Can, Nursel; Kutlu, Kubilay; Tekin, Emine; Pravadal?, Selin

    2013-12-16

    Transport properties of electrons and holes were investigated not only in a anthracene-containing poly(p-phenylene-ethynylene)- alt - poly(p-phenylene-vinylene) (PPE-PPV) polymer (AnE-PVstat) light emitting diodes (OLED) but also in an ITO/Ag/polymer/Ag electron and ITO/PEDOT:PSS/polymer/Au hole only devices. Mobility of injected carriers followed the Poole-Frenkel type conduction mechanism and distinguished in the frequency range due to the difference of transit times in admittance measurement. Beginning of light output took place at the turn-on voltage (or flat band voltage), 1.8 V, which was the difference of energy band gap of polymer and two barrier offsets between metals and polymer.

  19. Low Voltage, Low Power Organic Light Emitting Transistors for AMOLED Displays

    SciTech Connect (OSTI)

    McCarthy, M. A. [University of Florida, Gainesville; Liu, B. [University of Florida, Gainesville; Donoghue, E. P. [University of Florida, Gainesville; Kravchenko, Ivan I [ORNL; Kim, D. Y. [University of Florida, Gainesville; Reynolds, J. R. [University of Florida, Gainesville; So, Franky [University of Florida, Gainesville; Rinzler, A. G. [University of Florida, Gainesville

    2011-01-01

    Low voltage, low power dissipation, high aperture ratio organic light emitting transistors are demonstrated. The high level of performance is enabled by a carbon nanotube source electrode that permits integration of the drive transistor and the organic light emitting diode into an efficient single stacked device. Given the demonstrated performance, this technology could break the technical logjam holding back widespread deployment of active matrix organic light emitting displays at flat panel screen sizes.

  20. 2014-05-16 Issuance: Test Procedures for Integrated Light-Emitting Diode

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Lamps; Supplemental Notice of Proposed Rulemaking | Department of Energy 16 Issuance: Test Procedures for Integrated Light-Emitting Diode Lamps; Supplemental Notice of Proposed Rulemaking 2014-05-16 Issuance: Test Procedures for Integrated Light-Emitting Diode Lamps; Supplemental Notice of Proposed Rulemaking This document is a pre-publication Federal Register supplemental notice of proposed rulemaking regarding test procedures for integrated light-emitting diode lamps, as issued by the

  1. Red-Emitting Phosphors for Solid-State Lighting - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Industrial Technologies Industrial Technologies Electricity Transmission Electricity Transmission Advanced Materials Advanced Materials Find More Like This Return to Search Red-Emitting Phosphors for Solid-State Lighting Sandia National Laboratories Contact SNL About This Technology Publications: PDF Document Publication Market Sheet (851 KB) Technology Marketing SummarySandia has developed red-emitting phosphors that will help to transform the cold blue of many current light-emitting diodes

  2. Organic light-emitting device with a phosphor-sensitized fluorescent emission layer

    DOE Patents [OSTI]

    Forrest, Stephen; Kanno, Hiroshi

    2009-08-25

    The present invention relates to organic light emitting devices (OLEDs), and more specifically to OLEDS that emit light using a combination of fluorescent emitters and phosphorescent emitters. The emissive region of the devices of the present invention comprise at least one phosphor-sensitized layer which has a combined emission from a phosphorescent emitter and a fluorescent emitter. In preferred embodiments, the invention relates to white-emitting OLEDS (WOLEDs).

  3. Climate Change Update: Baseload Geothermal is One of the Lowest Emitting

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Technologies | Department of Energy Climate Change Update: Baseload Geothermal is One of the Lowest Emitting Energy Technologies Climate Change Update: Baseload Geothermal is One of the Lowest Emitting Energy Technologies June 26, 2013 - 11:53am Addthis Geothermal energy - energy derived from the heat of the earth - has the ability to produce electricity consistently around the clock, draws a small environmental footprint, and emits little or no greenhouse gases (GHG). Estimates of

  4. A smart sensor system for trace organic vapor detection using a temperature-controlled array of surface acoustic wave vapor sensors, automated preconcentrator tubes, and pattern recognition

    SciTech Connect (OSTI)

    Grate, J.W.; Rose-Pehrsson, S.L.; Klusty, M.; Wohltjen, H.

    1993-05-01

    A smart sensor system for the detection, of toxic organophosphorus and toxic organosulfur vapors at trace concentrations has been designed, fabricated, and tested against a wide variety of vapor challenges. The key features of the system are: An array of four surface acoustic wave (SAW) vapor sensors, temperature control of the vapor sensors, the use of pattern recognition to analyze the sensor data, and an automated sampling system including thermally-desorbed preconcentrator tubes (PCTs).

  5. Environmental barrier material for organic light emitting device and method of making

    DOE Patents [OSTI]

    Graff, Gordon L [West Richland, WA; Gross, Mark E [Pasco, WA; Affinito, John D [Kennewick, WA; Shi, Ming-Kun [Richland, WA; Hall, Michael [West Richland, WA; Mast, Eric [Richland, WA

    2003-02-18

    An encapsulated organic light emitting device. The device includes a first barrier stack comprising at least one first barrier layer and at least one first polymer layer. There is an organic light emitting layer stack adjacent to the first barrier stack. A second barrier stack is adjacent to the organic light emitting layer stack. The second barrier stack has at least one second barrier layer and at least one second polymer layer. A method of making the encapsulated organic light emitting device is also provided.

  6. Energy Savings Estimates of Light Emitting Diodes in Niche Lighting Applications

    SciTech Connect (OSTI)

    none,

    2011-01-01

    This report is an analysis of niche markets and applications for light-emitting diodes (LEDs), undertaken on behalf of the U.S. Department of Energy.

  7. Energy Savings Estimates of Light Emitting Diodes in Niche Lighting Applications

    SciTech Connect (OSTI)

    None, None

    2008-09-01

    This report is an analysis of niche markets and applications for light-emitting diodes (LEDs), undertaken on behalf of the U.S. Department of Energy.

  8. High performance flexible top-emitting warm-white organic light...

    Office of Scientific and Technical Information (OSTI)

    TCTA. By adjusting the relative position of the orange-red EML sandwiched between the blue emitting layers, the optimized device exhibits the highest powercurrent efficiency of...

  9. Low-Cost Light-Emitting Diode Luminaire for General Illumination

    Broader source: Energy.gov [DOE]

    This project is demonstrating an efficient and stable white organic light-emitting diode (WOLED) using a single emitter on a planar glass substrate.

  10. Demonstration Assessment of Light-Emitting Diode (LED) Area Lights for a Commercial Garage

    SciTech Connect (OSTI)

    2008-11-01

    This U.S. Department of Energy GATEWAY Demonstration project studied the applicability of light-emitting diode (LED) luminaires for commercial parking garage applications.

  11. ULTRAVIOLET NUMBER COUNTS OF GALAXIES FROM SWIFT ULTRAVIOLET/OPTICAL TELESCOPE DEEP IMAGING OF THE CHANDRA DEEP FIELD SOUTH

    SciTech Connect (OSTI)

    Hoversten, E. A.; Gronwall, C.; Koch, T. S.; Roming, P. W. A.; Siegel, M. H.; Berk, D. E. Vanden; Breeveld, A. A.; Curran, P. A.; Still, M.

    2009-11-10

    Deep Swift UV/Optical Telescope (UVOT) imaging of the Chandra Deep Field South is used to measure galaxy number counts in three near-ultraviolet (NUV) filters (uvw2: 1928 A, uvm2: 2246 A, and uvw1: 2600 A) and the u band (3645 A). UVOT observations cover the break in the slope of the NUV number counts with greater precision than the number counts by the Hubble Space Telescope Space Telescope Imaging Spectrograph and the Galaxy Evolution Explorer, spanning a range 21 approx< m{sub AB} approx< 25. Model number counts confirm earlier investigations in favoring models with an evolving galaxy luminosity function.

  12. Ultraviolet Free Electron Laser Facility preliminary design report

    SciTech Connect (OSTI)

    Ben-Zvi, I.

    1993-02-01

    This document, the Preliminary Design Report (PDR) for the Brookhaven Ultraviolet Free Electron Laser (UV FEL) facility, describes all the elements of a facility proposed to meet the needs of a research community which requires ultraviolet sources not currently available as laboratory based lasers. Further, for these experiments, the requisite properties are not extant in either the existing second or upcoming third generation synchrotron light sources. This document is the result of our effort at BNL to identify potential users, determine the requirements of their experiments, and to design a facility which can not only satisfy the existing need, but have adequate flexibility for possible future extensions as need dictates and as evolving technology allows. The PDR is comprised of three volumes. In this, the first volume, background for the development of the proposal is given, including descriptions of the UV FEL facility, and representative examples of the science it was designed to perform. Discussion of the limitations and potential directions for growth are also included. A detailed description of the facility design is then provided, which addresses the accelerator, optical, and experimental systems. Information regarding the conventional construction for the facility is contained in an addendum to volume one (IA).

  13. Bipolar charging of dust particles under ultraviolet radiation

    SciTech Connect (OSTI)

    Filippov, A. V. Babichev, V. N.; Fortov, V. E.; Gavrikov, A. V.; Pal', A. F.; Petrov, O. F.; Starostin, A. N.; Sarkarov, N. E.

    2011-05-15

    The photoemission charging of dust particles under ultraviolet radiation from a xenon lamp has been investigated. The velocities of yttrium dust particles with a work function of 3.3 eV and their charges have been determined experimentally; the latter are about 400-500 and about 100 elementary charges per micron of radius for the positively and negatively charged fractions, respectively. The dust particle charging and the dust cloud evolution in a photoemission cell after exposure to an ultraviolet radiation source under the applied voltage have been simulated numerically. The photoemission charging of dust particles has been calculated on the basis of nonlocal and local charging models. Only unipolar particle charging is shown to take place in a system of polydisperse dust particles with the same photoemission efficiency. It has been established that bipolar charging is possible in the case of monodisperse particles with different quantum efficiencies. Polydispersity in this case facilitates the appearance of oppositely charged particles in a photoemission plasma.

  14. Laser absorption spectroscopy system for vaporization process characterization and control

    SciTech Connect (OSTI)

    Galkowski, J.; Hagans, K.

    1993-09-07

    In support of the Lawrence Livermore National Laboratory`s (LLNL`s) Uranium Atomic Vapor Laser Isotope Separation (U-AVLIS) Program, a laser atomic absorption spectroscopy (LAS) system has been developed. This multi-laser system is capable of simultaneously measuring the line densities of {sup 238}U ground and metastable states, {sup 235}U ground and metastable states, iron, and ions at up to nine locations within the separator vessel. Supporting enrichment experiments that last over one hundred hours, this laser spectroscopy system is employed to diagnose and optimize separator system performance, control the electron beam vaporizer and metal feed systems, and provide physics data for the validation of computer models. As a tool for spectroscopic research, vapor plume characterization, vapor deposition monitoring, and vaporizer development, LLNL`s LAS laboratory with its six argon-ion-pumped ring dye lasers and recently added Ti:Sapphire and external-cavity diode-lasers has capabilities far beyond the requirements of its primary mission.

  15. Direct Real-Time Detection of Vapors from Explosive Compounds

    SciTech Connect (OSTI)

    Ewing, Robert G.; Clowers, Brian H.; Atkinson, David A.

    2013-10-03

    The real-time detection of vapors from low volatility explosives including PETN, tetryl, RDX and nitroglycerine along with various compositions containing these substances is demonstrated. This was accomplished with an atmospheric flow tube (AFT) using a non-radioactive ionization source and coupled to a mass spectrometer. Direct vapor detection was demonstrated in less than 5 seconds at ambient temperature without sample pre-concentration. The several seconds of residence time of analytes in the AFT provides a significant opportunity for reactant ions to interact with analyte vapors to achieve ionization. This extended reaction time, combined with the selective ionization using the nitrate reactant ions (NO3- and NO3-HNO3), enables highly sensitive explosives detection. Observed signals from diluted explosive vapors indicate detection limits below 10 ppqv using selected ion monitoring (SIM) of the explosive-nitrate adduct at m/z 349, 378, 284 and 289 for tetryl, PETN, RDX and NG respectively. Also provided is a demonstration of the vapor detection from 10 different energetic formulations, including double base propellants, plastic explosives and commercial blasting explosives using SIM for the NG, PETN and RDX product ions.

  16. Vapor etching of nuclear tracks in dielectric materials

    DOE Patents [OSTI]

    Musket, Ronald G.; Porter, John D.; Yoshiyama, James M.; Contolini, Robert J.

    2000-01-01

    A process involving vapor etching of nuclear tracks in dielectric materials for creating high aspect ratio (i.e., length much greater than diameter), isolated cylindrical holes in dielectric materials that have been exposed to high-energy atomic particles. The process includes cleaning the surface of the tracked material and exposing the cleaned surface to a vapor of a suitable etchant. Independent control of the temperatures of the vapor and the tracked materials provide the means to vary separately the etch rates for the latent track region and the non-tracked material. As a rule, the tracked regions etch at a greater rate than the non-tracked regions. In addition, the vapor-etched holes can be enlarged and smoothed by subsequent dipping in a liquid etchant. The 20-1000 nm diameter holes resulting from the vapor etching process can be useful as molds for electroplating nanometer-sized filaments, etching gate cavities for deposition of nano-cones, developing high-aspect ratio holes in trackable resists, and as filters for a variety of molecular-sized particles in virtually any liquid or gas by selecting the dielectric material that is compatible with the liquid or gas of interest.

  17. Drying of pulverized material with heated condensible vapor

    DOE Patents [OSTI]

    Carlson, L.W.

    1984-08-16

    Apparatus for drying pulverized material utilizes a high enthalpy condensable vapor such as steam for removing moisture from the individual particles of the pulverized material. The initially wet particulate material is tangentially delivered by a carrier vapor flow to an upper portion of a generally vertical cylindrical separation drum. The lateral wall of the separation drum is provided with a plurality of flow guides for directing the vapor tangentially therein in the direction of particulate material flow. Positioned concentrically within the separation drum and along the longitudinal axis thereof is a water-cooled condensation cylinder which is provided with a plurality of collection plates, or fines, on the outer lateral surface thereof. The cooled collection fines are aligned counter to the flow of the pulverized material and high enthalpy vapor mixture to maximize water vapor condensation thereon. The condensed liquid which includes moisture removed from the pulverized materials then flows downward along the outer surface of the coolant cylinder and is collected and removed. The particles travel in a shallow helix due to respective centrifugal and vertical acceleration forces applied thereto. The individual particles of the pulverized material are directed outwardly by the vortex flow where they contact the inner cylindrical surface of the separation drum and are then deposited at the bottom thereof for easy collection and removal. The pulverized material drying apparatus is particularly adapted for drying coal fines and facilitates the recovery of the pulverized coal. 2 figs.

  18. Drying of pulverized material with heated condensible vapor

    DOE Patents [OSTI]

    Carlson, Larry W.

    1986-01-01

    Apparatus for drying pulverized material utilizes a high enthalpy condensable vapor such as steam for removing moisture from the individual particles of the pulverized material. The initially wet particulate material is tangentially delivered by a carrier vapor flow to an upper portion of a generally vertical cylindrical separation drum. The lateral wall of the separation drum is provided with a plurality of flow guides for directing the vapor tangentially therein in the direction of particulate material flow. Positioned concentrically within the separation drum and along the longitudinal axis thereof is a water-cooled condensation cylinder which is provided with a plurality of collection plates, or fins, on the outer lateral surface thereof. The cooled collection fins are aligned counter to the flow of the pulverized material and high enthalpy vapor mixture to maximize water vapor condensation thereon. The condensed liquid which includes moisture removed from the pulverized material then flows downward along the outer surface of the coolant cylinder and is collected and removed. The particles travel in a shallow helix due to respective centrifugal and vertical acceleration forces applied thereto. The individual particles of the pulverized material are directed outwardly by the vortex flow where they contact the inner cylindrical surface of the separation drum and are then deposited at the bottom thereof for easy collection and removal. The pulverized material drying apparatus is particularly adapted for drying coal fines and facilitates the recovery of the pulverized coal.

  19. Characterization of hydrogenated amorphous germanium compounds obtained by x-ray chemical vapor deposition of germane: Effect of the irradiation dose on optical parameters and structural order

    SciTech Connect (OSTI)

    Arrais, Aldo; Benzi, Paola; Bottizzo, Elena; Demaria, Chiara

    2007-11-15

    Hydrogenated nonstoichiometric germanium materials have been produced by x-ray activated-chemical vapor deposition from germane. The reactions pattern leading to the solid products has been investigated. The dose effect on the composition, the local bonding configuration, and structural characteristics of the deposited solids has been studied using infrared absorption and Raman spectroscopy and has been discussed. Optical parameters have been also determined from ultraviolet-visible spectrophotometry data. The results show that the solids are formed by a random bound network of germanium and hydrogen atoms with a-Ge zones dispersed in the matrix. The Raman results and optical parameters indicate that the structural order, both short-range and intermediate-range, decreases with increasing irradiation time. This behavior suggests that the solid is involved in the reactions leading to the final product and indicates that the formation of amorphous germanium zones is stimulated by postdeposition irradiation, which induces compositional and structural modifications.

  20. Removal of Sarin Aerosol and Vapor by Water Sprays

    SciTech Connect (OSTI)

    Brockmann, John E.

    1998-09-01

    Falling water drops can collect particles and soluble or reactive vapor from the gas through which they fall. Rain is known to remove particles and vapors by the process of rainout. Water sprays can be used to remove radioactive aerosol from the atmosphere of a nuclear reactor containment building. There is a potential for water sprays to be used as a mitigation technique to remove chemical or bio- logical agents from the air. This paper is a quick-look at water spray removal. It is not definitive but rather provides a reasonable basic model for particle and gas removal and presents an example calcu- lation of sarin removal from a BART station. This work ~ a starting point and the results indicate that further modeling and exploration of additional mechanisms for particle and vapor removal may prove beneficial.

  1. VAPORIZATION OF TUNGSTEN-METAL IN STEAM AT HIGH TEMPERATURES.

    SciTech Connect (OSTI)

    GREENE,G.A.; FINFROCK,C.C.

    2000-10-01

    The vaporization of tungsten from the APT spallation target dominates the radiological source term for unmitigated target overheating accidents. Chemical reactions of tungsten with steam which persist to tungsten temperatures as low as 800 C result in the formation of a hydrated tungsten-oxide which has a high vapor pressure and is readily convected in a flowing atmosphere. This low-temperature vaporization reaction essentially removes the oxide film that forms on the tungsten-metal surface as soon as it forms, leaving behind a fresh metallic surface for continued oxidation and vaporization. Experiments were conducted to measure the oxidative vaporization rates of tungsten in steam as part of the effort to quantify the MT radiological source term for severe target accidents. Tests were conducted with tungsten rods (1/8 inch diameter, six inches long) heated to temperatures from approximately 700 C to 1350 C in flowing steam which was superheated to 140 C. A total of 19 experiments was conducted. Fifteen tests were conducted by RF induction heating of single tungsten rods held vertical in a quartz glass retort. Four tests were conducted in a vertically-mounted tube furnace for the low temperature range of the test series. The aerosol which was generated and transported downstream from the tungsten rods was collected by passing the discharged steam through a condenser. This procedure insured total collection of the steam along with the aerosol from the vaporization of the rods. The results of these experiments revealed a threshold temperature for tungsten vaporization in steam. For the two tests at the lowest temperatures which were tested, approximately 700 C, the tungsten rods were observed to oxidize without vaporization. The remainder of the tests was conducted over the temperature range of 800 C to 1350 C. In these tests, the rods were found to have lost weight due to vaporization of the tungsten and the missing weight was collected in the downstream condensate

  2. Low temperature photochemical vapor deposition of alloy and mixed metal oxide films

    DOE Patents [OSTI]

    Liu, David K.

    1992-01-01

    Method and apparatus for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure.

  3. Low temperature photochemical vapor deposition of alloy and mixed metal oxide films

    DOE Patents [OSTI]

    Liu, D.K.

    1992-12-15

    Method and apparatus are described for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure. 7 figs.

  4. Liquid-phase compositions from vapor-phase analyses

    SciTech Connect (OSTI)

    Davis, W. Jr. ); Cochran, H.D. )

    1990-02-01

    Arsenic normally is not considered to be a contaminant. However, because arsenic was found in many cylinders of UF{sub 6}, including in corrosion products, a study was performed of the distribution of the two arsenic fluorides, AsF{sub 3} and AsF{sub 5}, between liquid and vapor phases. The results of the study pertain to condensation or vaporization of liquid UF{sub 6}. This study includes use of various experimental data plus many extrapolations necessitated by the meagerness of the experimental data. The results of this study provide additional support for the vapor-liquid equilibrium model of J.M. Prausnitz and his coworkers as a means of describing the distribution of various impurities between vapor and liquid phases of UF{sub 6}. Thus, it is concluded that AsF{sub 3} will tend to concentrate in the liquid phase but that the concentration of AsF{sub 5} in the vapor phase will exceed its liquid-phase concentration by a factor of about 7.5, which is in agreement with experimental data. Because the weight of the liquid phase in a condensation operation may be in the range of thousands of times that of the vapor phase, most of any AsF{sub 5} will be in the liquid phase in spite of this separation factor of 7.5. It may also be concluded that any arsenic fluorides fed into a uranium isotope separation plant will either travel with other low-molecular-weight gases or react with materials present in the plant. 25 refs., 3 figs., 6 tabs.

  5. SIMULTANEOUS X-RAY AND ULTRAVIOLET OBSERVATIONS OF THE SW SEXTANTIS STAR DW URSAE MAJORIS

    SciTech Connect (OSTI)

    Hoard, D. W.; Wachter, S.; Lu, Ting-Ni; Knigge, Christian; Homer, Lee; Szkody, Paula; Still, M.; Long, Knox S.; Dhillon, V. S.

    2010-11-15

    We present the first pointed X-ray observation of DW Ursae Majoris, a novalike cataclysmic variable (CV) and one of the archetype members of the SW Sextantis class, obtained with the XMM-Newton satellite. These data provide the first detailed look at an SW Sex star in the X-ray regime (with previous X-ray knowledge of the SW Sex stars limited primarily to weak or non-detections in the ROSAT All Sky Survey). It is also one of only a few XMM-Newton observations (to date) of any high mass transfer rate novalike CV, and the only one in the evolutionarily important 3-4 hr orbital period range. The observed X-ray spectrum of DW UMa is very soft, with {approx}95% of the detected X-ray photons at energies <2 keV. The spectrum can be fit equally well by a one-component cooling flow model, with a temperature range of 0.2-3.5 keV, or a two-component, two-temperature thermal plasma model, containing hard ({approx}5-6 keV) and soft ({approx}0.8 keV) components. The X-ray light curve of DW UMa shows a likely partial eclipse, implying X-ray reprocessing in a vertically extended region, and an orbital modulation, implying a structural asymmetry in the X-ray reprocessing site (e.g., it cannot be a uniform corona). We also obtained a simultaneous near-ultraviolet light curve of DW UMa using the Optical Monitor on XMM-Newton. This light curve is similar in appearance to published optical-UV light curves of DW UMa and shows a prominent deep eclipse. Regardless of the exact nature of the X-ray reprocessing site in DW UMa, the lack of a prominent hard X-ray total eclipse and very low fraction of high energy X-rays point to the presence of an optically and geometrically thick accretion disk that obscures the boundary layer and modifies the X-ray spectrum emitted near the white dwarf.

  6. ARM - Field Campaign - ARM-FIRE Water Vapor Experiment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govCampaignsARM-FIRE Water Vapor Experiment ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : ARM-FIRE Water Vapor Experiment 2000.11.01 - 2000.12.31 Lead Scientist : Henry Revercomb Data Availability Yes For data sets, see below. Summary This field mission experience indicated that it is possible for several sensors to be used in a coordinated fashion over a period of several weeks to achieve a mean water

  7. ARM - Field Campaign - Arctic Winter Water Vapor IOP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govCampaignsArctic Winter Water Vapor IOP ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : Arctic Winter Water Vapor IOP 2004.03.09 - 2004.04.09 Lead Scientist : Ed Westwater Data Availability http://www.etl.noaa.gov/programs/2004/wviop/data will contain quicklooks of all of the data. For data sets, see below. Summary During the IOP, the Ground-based Scanning Radiometer of NOAA/ETL, and the ARM MicroWave

  8. Nanocluster-based white-light-emitting material employing surface tuning

    DOE Patents [OSTI]

    Wilcoxon, Jess P.; Abrams, Billie L.; Thoma, Steven G.

    2007-06-26

    A method for making a nanocrystal-based material capable of emitting light over a sufficiently broad spectral range to appear white. Surface-modifying ligands are used to shift and broaden the emission of semiconductor nanocrystals to produce nanoparticle-based materials that emit white light.

  9. Method to generate high efficient devices which emit high quality light for illumination

    DOE Patents [OSTI]

    Krummacher, Benjamin C.; Mathai, Mathew; Choong, Vi-En; Choulis, Stelios A.

    2009-06-30

    An electroluminescent apparatus includes an OLED device emitting light in the blue and green spectrums, and at least one down conversion layer. The down conversion layer absorbs at least part of the green spectrum light and emits light in at least one of the orange spectra and red spectra.

  10. Simulated evolution of fluorophores for light emitting diodes

    SciTech Connect (OSTI)

    Shu, Yinan; Levine, Benjamin G.

    2015-03-14

    Organic light emitting diodes based on fluorophores with a propensity for thermally activated delayed fluorescence (TADF) are able to circumvent limitations imposed on device efficiency by spin statistics. Molecules with a propensity for TADF necessarily have two properties: a small gap between the lowest lying singlet and triplet excited states and a large transition dipole moment for fluorescence. In this work, we demonstrate the use of a genetic algorithm to search a region of chemical space for molecules with these properties. This algorithm is based on a flexible and intuitive representation of the molecule as a tree data structure, in which the nodes correspond to molecular fragments. Our implementation takes advantage of hybrid parallel graphics processing unit accelerated computer clusters to allow efficient sampling while retaining a reasonably accurate description of the electronic structure (in this case, CAM-B3LYP/6-31G{sup ??}). In total, we have identified 3792 promising candidate fluorophores from a chemical space containing 1.26 10{sup 6} molecules. This required performing electronic structure calculations on only 7518 molecules, a small fraction of the full space. Several novel classes of molecules which show promise as fluorophores are presented.

  11. The effects of heat conduction on the vaporization of liquid invading superheated permeable rock

    SciTech Connect (OSTI)

    Woods, Andrew, W.; Fitzgerald, Shaun D.

    1996-01-24

    We examine the role of conductive and convective heat transfer in the vaporization of liquid as it slowly invades a superheated permeable rock. For very slow migration, virtually all of the liquid vaporizes. As the liquid supply rate increases beyond the rate of heat transfer by thermal conduction, a decreasing fraction of the liquid can vaporize. Indeed, for sufficiently high flow rates, the fraction vaporizing depends solely on the superheat of the rock, and any heat transfer from the superheated region is negligible. These results complement earlier studies of vaporization under very high injection rates, in which case the dynamic vapour pressure reduces the mass fraction vaporizing to very small values.

  12. Effect of higher water vapor content on TBC performance

    SciTech Connect (OSTI)

    Pint, Bruce A; Haynes, James A

    2012-01-01

    Coal gasification, or IGCC (integrated gasification combined cycle), is one pathway toward cleaner use of coal for power generation with lower emissions. However, when coal-derived synthesis gas (i.e., syngas) is burned in turbines designed for natural gas, turbine manufacturers recommend 'derating,' or lowering the maximum temperature, which lowers the efficiency of the turbine, making electricity from IGCC more expensive. One possible reason for the derating is the higher water vapor contents in the exhaust gas. Water vapor has a detrimental effect on many oxidation-resistant high-temperature materials. In a turbine hot section, Ni-base superalloys are coated with a thermal barrier coating (TBC) allowing the gas temperature to be higher than the superalloy solidus temperature. TBCs have a low thermal conductivity ceramic top coating (typically Y{sub 2}O{sub 3}-stabilized ZrO{sub 2}, or YSZ) and an oxidation-resistant metallic bond coating. For land-based gas turbines, the industry standard is air plasma sprayed (APS) YSZ and high velocity oxygen fuel (HVOF) sprayed NiCoCrAlY bond coatings. To investigate the role of higher water vapor content on TBC performance and possible mitigation strategies, furnace cycling experiments were conducted in dry O{sub 2} and air with 10% (typical with natural gas or jet fuel) or 50 vol% water vapor. Cycle frequency and temperature were accelerated to one hour at 1100 C (with 10 minute cooling to {approx}30 C between each thermal cycle) to induce early failures in coatings that are expected to operate for several years with a metal temperature of {approx}900 C. Coupons (16 mm diameter x 2 mm thick) of commercial second-generation single crystal superalloy CMSX4 were HVOF coated on both sides with {approx}125 {micro}m of Ni-22wt%Co-17Cr-12Al either with 0.7Y or 0.7Y-0.3Hf-0.4Si. One side was then coated with 190-240 {micro}m of APS YSZ. Coatings were cycled until the YSZ top coating spalled. Figure 2 shows the results of the

  13. Extreme ultraviolet induced defects on few-layer graphene

    SciTech Connect (OSTI)

    Gao, A.; Zoethout, E.; Lee, C. J.; Rizo, P. J.; Scaccabarozzi, L.; Banine, V.; Bijkerk, F.; MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede

    2013-07-28

    We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e., relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H{sub 2} background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy results show that the sp{sup 2} bonded carbon fraction decreases while the sp{sup 3} bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects.

  14. THE EXTREME-ULTRAVIOLET EMISSION FROM SUN-GRAZING COMETS

    SciTech Connect (OSTI)

    Bryans, P.; Pesnell, W. D.

    2012-11-20

    The Atmospheric Imaging Assembly (AIA) on the Solar Dynamics Observatory has observed two Sun-grazing comets as they passed through the solar atmosphere. Both passages resulted in a measurable enhancement of extreme-ultraviolet (EUV) radiance in several of the AIA bandpasses. We explain this EUV emission by considering the evolution of the cometary atmosphere as it interacts with the ambient solar atmosphere. Molecules in the comet rapidly sublimate as it approaches the Sun. They are then photodissociated by the solar radiation field to create atomic species. Subsequent ionization of these atoms produces a higher abundance of ions than normally present in the corona and results in EUV emission in the wavelength ranges of the AIA telescope passbands.

  15. Multifunctional optical correlator for picosecond ultraviolet laser pulse measurement

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Rakhman, Abdurahim; Wang, Yang; Garcia, Frances; Long, Cary D.; Huang, Chunning; Takeda, Yasuhiro; Liu, Yun

    2014-01-01

    A compact optical correlator system that measures both the autocorrelation between two infrared (IR) lights and the cross-correlation between an IR and an ultraviolet (UV) light using a single nonlinear optical crystal has been designed and experimentally demonstrated. The rapid scanning of optical delay line, switching between auto and cross-correlations, crystal angle tuning, and data acquisition and processing are all computer controlled. Pulse widths of an IR light from a mode-locked laser are measured by the correlator and the results are compared with a direct measurement using a high-speed photodetector system. The correlator has been used to study the parametermore » dependence of the pulse width of a macropulse UV laser designed for laser-assisted hydrogen ion (H-) beam stripping for the Spallation Neutron Source at Oak Ridge National Laboratory.« less

  16. Method for the protection of extreme ultraviolet lithography optics

    DOE Patents [OSTI]

    Grunow, Philip A.; Clift, Wayne M.; Klebanoff, Leonard E.

    2010-06-22

    A coating for the protection of optical surfaces exposed to a high energy erosive plasma. A gas that can be decomposed by the high energy plasma, such as the xenon plasma used for extreme ultraviolet lithography (EUVL), is injected into the EUVL machine. The decomposition products coat the optical surfaces with a protective coating maintained at less than about 100 .ANG. thick by periodic injections of the gas. Gases that can be used include hydrocarbon gases, particularly methane, PH.sub.3 and H.sub.2S. The use of PH.sub.3 and H.sub.2S is particularly advantageous since films of the plasma-induced decomposition products S and P cannot grow to greater than 10 .ANG. thick in a vacuum atmosphere such as found in an EUVL machine.

  17. The Atomic Vapor Laser Isotope Separation Program. [Atomic Vapor Laser Isotope Separation (AVLIS) Program

    SciTech Connect (OSTI)

    Not Available

    1992-11-09

    This report provides the finding and recommendations on the audit of the Atomic Vapor Laser Isotope Separation (AVLIS) program. The status of the program was assessed to determine whether the Department was achieving objectives stated in its January 1990 Plan for the Demonstration, Transition and Deployment of AVLIS Technology. Through Fiscal Year 1991, the Department had spent about $1.1 billion to develop AVLIS technology. The January 1990 plan provided for AVLIS to be far enough along by September to enable the Department to make a determination of the technical and economic feasibility of deployment. However, the milestones needed to support that determination were not met. An estimated $550 million would be needed to complete AVLIS engineering development and related testing prior to deployment. The earliest possible deployment date has slipped to beyond the year 2000. It is recommended that the Department reassess the requirement for AVLIS in light of program delays and changes that have taken place in the enrichment market since January 1990. Following the reassessment, a decision should be made to either fully support and promote the actions needed to complete AVLIS development or discontinue support for the program entirely. Management's position is that the Department will successfully complete the AVLIS technology demonstration and that the program should continue until it can be transferred to a Government corporation. Although the auditors recognize that AVLIS may be transferred, there are enough technical and financial uncertainties that a thorough assessment is warranted.

  18. Ultraviolet Resonant Raman Enhancements in the Detection of Explosives

    SciTech Connect (OSTI)

    Short, B J; Carter, J C; Gunter, D; Hovland, P; Jagode, H; Karavanic, K; Marin, G; Mellor-Crummey, J; Moore, S; Norris, B; Oliker, L; Olschanowsky, C; Roth, P C; Schulz, M; Shende, S; Snavely, A; Spear, W

    2009-06-03

    Raman-based spectroscopy is potentially militarily useful for standoff detection of high explosives. Normal (non-resonance) and resonance Raman spectroscopies are both light scattering techniques that use a laser to measure the vibrational spectrum of a sample. In resonance Raman, the laser is tuned to match the wavelength of a strong electronic absorbance in the molecule of interest, whereas, in normal Raman the laser is not tuned to any strong electronic absorbance bands. The selection of appropriate excitation wavelengths in resonance Raman can result in a dramatic increase in the Raman scattering efficiency of select band(s) associated with the electronic transition. Other than the excitation wavelength, however, resonance Raman is performed experimentally the same as normal Raman. In these studies, normal and resonance Raman spectral signatures of select solid high explosive (HE) samples and explosive precursors were collected at 785 nm, 244 nm and 229 nm. Solutions of PETN, TNT, and explosive precursors (DNT & PNT) in acetonitrile solvent as an internal Raman standard were quantitatively evaluated using ultraviolet resonance Raman (UVRR) microscopy and normal Raman spectroscopy as a function of power and select excitation wavelengths. Use of an internal standard allowed resonance enhancements to be estimated at 229 nm and 244 nm. Investigations demonstrated that UVRR provided {approx}2000-fold enhancement at 244 nm and {approx}800-fold improvement at 229 nm while PETN showed a maximum of {approx}25-fold at 244 nm and {approx}190-fold enhancement at 229 nm solely from resonance effects when compared to normal Raman measurements. In addition to the observed resonance enhancements, additional Raman signal enhancements are obtained with ultraviolet excitation (i.e., Raman scattering scales as !4 for measurements based on scattered photons). A model, based partly on the resonance Raman enhancement results for HE solutions, is presented for estimating Raman

  19. Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al{sub 2}O{sub 3} films and Al{sub 2}O{sub 3}/a-SiN{sub x}:H stacks

    SciTech Connect (OSTI)

    Keuning, W.; Weijer, P. van de; Lifka, H.; Kessels, W. M. M.; Creatore, M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Philips Research Laboratories, High Tech Campus 4, P.O. Box WAG12, 5656 AE Eindhoven (Netherlands); Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

    2012-01-15

    Al{sub 2}O{sub 3} thin films synthesized by plasma-enhanced atomic layer deposition (ALD) at room temperature (25 deg. C) have been tested as water vapor permeation barriers for organic light emitting diode devices. Silicon nitride films (a-SiN{sub x}:H) deposited by plasma-enhanced chemical vapor deposition served as reference and were used to develop Al{sub 2}O{sub 3}/a-SiN{sub x}:H stacks. On the basis of Ca test measurements, a very low intrinsic water vapor transmission rate of {<=} 2 x 10{sup -6} g m{sup -2} day{sup -1} and 4 x 10{sup -6} g m{sup -2} day{sup -1} (20 deg. C/50% relative humidity) were found for 20-40 nm Al{sub 2}O{sub 3} and 300 nm a-SiN{sub x}:H films, respectively. The cathode particle coverage was a factor of 4 better for the Al{sub 2}O{sub 3} films compared to the a-SiN{sub x}:H films and an average of 0.12 defects per cm{sup 2} was obtained for a stack consisting of three barrier layers (Al{sub 2}O{sub 3}/a-SiN{sub x}:H/Al{sub 2}O{sub 3}).

  20. Combination downflow-upflow vapor-liquid separator

    DOE Patents [OSTI]

    Kidwell, John H.; Prueter, William P.; Eaton, Andrew M.

    1987-03-10

    An improved vapor-liquid separator having a vertically disposed conduit for flow of a mixture. A first, second and third plurality of curved arms penetrate and extend within the conduit. A cylindrical member is radially spaced from the conduit forming an annulus therewith and having perforations and a retaining lip at its upper end.

  1. Method for removing metal vapor from gas streams

    DOE Patents [OSTI]

    Ahluwalia, R. K.; Im, K. H.

    1996-01-01

    A process for cleaning an inert gas contaminated with a metallic vapor, such as cadmium, involves withdrawing gas containing the metallic contaminant from a gas atmosphere of high purity argon; passing the gas containing the metallic contaminant to a mass transfer unit having a plurality of hot gas channels separated by a plurality of coolant gas channels; cooling the contaminated gas as it flows upward through the mass transfer unit to cause contaminated gas vapor to condense on the gas channel walls; regenerating the gas channels of the mass transfer unit; and, returning the cleaned gas to the gas atmosphere of high purity argon. The condensing of the contaminant-containing vapor occurs while suppressing contaminant particulate formation, and is promoted by providing a sufficient amount of surface area in the mass transfer unit to cause the vapor to condense and relieve supersaturation buildup such that contaminant particulates are not formed. Condensation of the contaminant is prevented on supply and return lines in which the contaminant containing gas is withdrawn and returned from and to the electrorefiner and mass transfer unit by heating and insulating the supply and return lines.

  2. Method for removing metal vapor from gas streams

    DOE Patents [OSTI]

    Ahluwalia, R.K.; Im, K.H.

    1996-04-02

    A process for cleaning an inert gas contaminated with a metallic vapor, such as cadmium, involves withdrawing gas containing the metallic contaminant from a gas atmosphere of high purity argon; passing the gas containing the metallic contaminant to a mass transfer unit having a plurality of hot gas channels separated by a plurality of coolant gas channels; cooling the contaminated gas as it flows upward through the mass transfer unit to cause contaminated gas vapor to condense on the gas channel walls; regenerating the gas channels of the mass transfer unit; and, returning the cleaned gas to the gas atmosphere of high purity argon. The condensing of the contaminant-containing vapor occurs while suppressing contaminant particulate formation, and is promoted by providing a sufficient amount of surface area in the mass transfer unit to cause the vapor to condense and relieve supersaturation buildup such that contaminant particulates are not formed. Condensation of the contaminant is prevented on supply and return lines in which the contaminant containing gas is withdrawn and returned from and to the electrorefiner and mass transfer unit by heating and insulating the supply and return lines. 13 figs.

  3. Industrial applications of high-power copper vapor lasers

    SciTech Connect (OSTI)

    Warner, B.E.; Boley, C.D.; Chang, J.J.; Dragon, E.P.; Havstad, M.A.; Martinez, M.; McLean, W. II

    1995-08-01

    A growing appreciation has developed in the last several years for the copper vapor laser because of its utility in ablating difficult materials at high rates. Laser ablation at high rates shows promise for numerous industrial applications such as thin film deposition, precision hole drilling, and machining of ceramics and other refractories.

  4. Carbonitride based phosphors and light emitting devices using the same

    DOE Patents [OSTI]

    Li, Yuanqiang; Tian, Yongchi; Romanelli, Michael Dennis

    2013-08-20

    Disclosed herein is a novel group of carbidonitride phosphors and light emitting devices which utilize these phosphors. In certain embodiments, the present invention is directed to a novel family of carbidonitride-based phosphors expressed as follows: Ca.sub.1-xAl.sub.x-xySi.sub.1-x+xyN.sub.2-x-xyC.sub.xy:A; (1) Ca.sub.1-x-zNa.sub.zM(III).sub.x-xy-zSi.sub.1-x+xy+zN.sub.2-x-xyC.sub.xy:- A; (2) M(II).sub.1-x-zM(I).sub.zM(III).sub.x-xy-zSi.sub.1-x+xy+zN.sub.2-x- -xyC.sub.xy:A; (3) M(II).sub.1-x-zM(I).sub.zM(III).sub.x-xy-zSi.sub.1-x+xy+zN.sub.2-x-xy-2w/- 3C.sub.xyO.sub.w-v/2H.sub.v:A; and (4) M(II).sub.1-x-zM(I).sub.zM(III).sub.x-xy-zSi.sub.1-x+xy+zN.sub.2-x-xy-2w/- 3-v/3C.sub.xyO.sub.wH.sub.v:A, (4a) wherein 0xy+z, and 0

  5. Red-emitting manganese-doped aluminum nitride phosphor

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Cherepy, Nerine J.; Payne, Stephen A.; Harvey, Nicholas M.; Aberg, Daniel; Seeley, Zachary M.; Holliday, Kiel S.; Tran, Ich C.; Zhou, Fei; Martinez, H. Paul; Demeyer, Jessica M.; et al

    2016-02-10

    Here, we report high efficiency luminescence with a manganese-doped aluminum nitride red-emitting phosphor under 254 nm excitation, as well as its excellent lumen maintenance in fluorescent lamp conditions, making it a candidate replacement for the widely deployed europium-doped yttria red phosphor. Solid-state reaction of aluminum nitride powders with manganese metal at 1900 °C, 10 atm N2 in a reducing environment results in nitrogen deficiency, as revealed diffuse reflectance spectra. When these powders are subsequently annealed in flowing nitrogen at 1650 °C, higher nitrogen content is recovered, resulting in white powders. Silicon was added to samples as an oxygen getter tomore » improve emission efficiency. NEXAFS spectra and DFT calculations indicate that the Mn dopant is divalent. From DFT calculations, the UV absorption band is proposed to be due to an aluminum vacancy coupled with oxygen impurity dopants, and Mn2+ is assumed to be closely associated with this site. In contrast with some previous reports, we find that the highest quantum efficiency with 254 nm excitation (Q.E. = 0.86 ± 0.14) is obtained in aluminum nitride with a low manganese doping level of 0.06 mol.%. The principal Mn2+ decay of 1.25 ms is assigned to non-interacting Mn sites, while additional components in the microsecond range appear with higher Mn doping, consistent with Mn clustering and resultant exchange coupling. Slower components are present in samples with low Mn doping, as well as strong afterglow, assigned to trapping on shallow traps followed by detrapping and subsequent trapping on Mn.« less

  6. Method and apparatus to measure vapor pressure in a flow system

    DOE Patents [OSTI]

    Grossman, Mark W.; Biblarz, Oscar

    1991-01-01

    The present invention is directed to a method for determining, by a condensation method, the vapor pressure of a material with a known vapor pressure versus temperature characteristic, in a flow system particularly in a mercury isotope enrichment process.

  7. Evaluating Water Vapor in the NCAR CAM3 Climate Model with RRTMG...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Water Vapor in the NCAR CAM3 Climate Model with RRTMGMcICA using Modeled and Observed ... Objectives: * Evaluate water vapor and temperature simulation in two versions of CAM3 by ...

  8. Technology Solutions Case Study: Moisture Durability of Vapor Permeable Insulating Sheathing

    SciTech Connect (OSTI)

    2013-10-01

    In this project, Building America team Building Science Corporation researched some of the ramifications of using exterior, vapor permeable insulation on retrofit walls with vapor permeable cavity insulation. Retrofit strategies are a key factor in reducing exterior building stock consumption.

  9. Analysis of crude oil vapor pressures at the U.S. Strategic Petroleum...

    Office of Scientific and Technical Information (OSTI)

    vapor pressures at the U.S. Strategic Petroleum Reserve. Citation Details In-Document Search Title: Analysis of crude oil vapor pressures at the U.S. Strategic Petroleum Reserve. ...

  10. Analysis of crude oil vapor pressures at the U.S. Strategic Petroleum...

    Office of Scientific and Technical Information (OSTI)

    Analysis of crude oil vapor pressures at the U.S. Strategic Petroleum Reserve. Citation Details In-Document Search Title: Analysis of crude oil vapor pressures at the U.S. ...

  11. A review of porous media enhanced vapor-phase diffusion mechanisms...

    Office of Scientific and Technical Information (OSTI)

    data: Does enhanced vapor-phase diffusion exist? Citation Details In-Document Search Title: A review of porous media enhanced vapor-phase diffusion mechanisms, models, and data: ...

  12. Organic light emitting device architecture for reducing the number of organic materials

    DOE Patents [OSTI]

    D'Andrade, Brian; Esler, James

    2011-10-18

    An organic light emitting device is provided. The device includes an anode and a cathode. A first emissive layer is disposed between the anode and the cathode. The first emissive layer includes a first non-emitting organic material, which is an organometallic material present in the first emissive layer in a concentration of at least 50 wt %. The first emissive layer also includes a first emitting organic material. A second emissive layer is disposed between the first emissive layer and the cathode, preferably, in direct contact with the first emissive layer. The second emissive material includes a second non-emitting organic material and a second emitting organic material. The first and second non-emitting materials, and the first and second emitting materials, are all different materials. A first non-emissive layer is disposed between the first emissive layer and the anode, and in direct contact with the first emissive layer. The first non- emissive layer comprises the first non-emissive organic material.

  13. Method and apparatus for producing durationally short ultraviolet or X-ray laser pulses

    DOE Patents [OSTI]

    MacGowan, Brian J.; Matthews, Dennis L.; Trebes, James E.

    1988-01-01

    A method and apparatus is disclosed for producing ultraviolet or X-ray laser pulses of short duration (32). An ultraviolet or X-ray laser pulse of long duration (12) is progressively refracted, across the surface of an opaque barrier (28), by a streaming plasma (22) that is produced by illuminating a solid target (16, 18) with a pulse of conventional line focused high power laser radiation (20). The short pulse of ultraviolet or X-ray laser radiation (32), which may be amplified to high power (40, 42), is separated out by passage through a slit aperture (30) in the opaque barrier (28).

  14. Method and apparatus for producing durationally short ultraviolet or x-ray laser pulses

    DOE Patents [OSTI]

    MacGowan, B.J.; Matthews, D.L.; Trebes, J.E.

    1987-05-05

    A method and apparatus is disclosed for producing ultraviolet or x- ray laser pulses of short duration. An ultraviolet or x-ray laser pulse of long duration is progressively refracted, across the surface of an opaque barrier, by a streaming plasma that is produced by illuminating a solid target with a pulse of conventional line focused high power laser radiation. The short pulse of ultraviolet or x-ray laser radiation, which may be amplified to high power, is separated out by passage through a slit aperture in the opaque barrier.

  15. High efficiency and brightness fluorescent organic light emitting diode by triplet-triplet fusion

    DOE Patents [OSTI]

    Forrest, Stephen; Zhang, Yifan

    2015-02-10

    A first device is provided. The first device further comprises an organic light emitting device. The organic light emitting device further comprises an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer may include an organic host compound and at least one organic emitting compound capable of fluorescent emission at room temperature. Various configurations are described for providing a range of current densities in which T-T fusion dominates over S-T annihilation, leading to very high efficiency fluorescent OLEDs.

  16. Demonstration Assessment of Light-Emitting Diode (LED) Post-Top Lighting at

    Office of Scientific and Technical Information (OSTI)

    Central Park in New York City (Technical Report) | SciTech Connect Demonstration Assessment of Light-Emitting Diode (LED) Post-Top Lighting at Central Park in New York City Citation Details In-Document Search Title: Demonstration Assessment of Light-Emitting Diode (LED) Post-Top Lighting at Central Park in New York City A review of five post-top light-emitting diode (LED) pedestrian luminaires installed in New York City's Central Park for possible replacement to the existing metal halide

  17. A novel red phosphor Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} for near UV white light-emitting diodes

    SciTech Connect (OSTI)

    Yang, Zhigang; Zhao, Zhengyan; Shi, Yurong; Wang, Yuhua

    2013-10-15

    Graphical abstract: - Highlights: Novel red phosphor Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} was prepared by solid-state reaction. Excitation spectra suggested an obvious absorption in near-ultraviolet region. Under 392 nm excitation, the phosphors exhibited a red emission at 614 nm. Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} could be potentially applied in near UV white LEDs. - Abstract: A novel red phosphor Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} was synthesized using a solid-state reaction method, and its luminescence characteristics and charge compensators effect (Li{sup +}, Na{sup +}, K{sup +}) were investigated. The excitation spectra showed a obvious absorption in near-ultraviolet region. Under 392 nm excitation, the phosphors exhibited an intense red emission at 614 nm. The Commission Internationale de lEclairage (CIE) chromaticity coordinates and quantum efficiency (QE) were (0.65, 0.35) and 62.3%, respectively. The good color saturation, high quantum efficiency and small thermal-quenching properties indicate that Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} could be potentially applied in near UV white light-emitting diodes.

  18. The ultraviolet-bright, slowly declining transient PS1-11af as a partial tidal disruption event

    SciTech Connect (OSTI)

    Chornock, R.; Berger, E.; Zauderer, B. A.; Kamble, A.; Soderberg, A. M.; Czekala, I.; Dittmann, J.; Drout, M.; Foley, R. J.; Fong, W.; Kirshner, R. P.; Lunnan, R.; Marion, G. H.; Narayan, G.; Gezari, S.; Rest, A.; Riess, A. G.; Chomiuk, L.; Huber, M. E.; Lawrence, A.; and others

    2014-01-01

    We present the Pan-STARRS1 discovery of the long-lived and blue transient PS1-11af, which was also detected by Galaxy Evolution Explorer with coordinated observations in the near-ultraviolet (NUV) band. PS1-11af is associated with the nucleus of an early type galaxy at redshift z = 0.4046 that exhibits no evidence for star formation or active galactic nucleus activity. Four epochs of spectroscopy reveal a pair of transient broad absorption features in the UV on otherwise featureless spectra. Despite the superficial similarity of these features to P-Cygni absorptions of supernovae (SNe), we conclude that PS1-11af is not consistent with the properties of known types of SNe. Blackbody fits to the spectral energy distribution are inconsistent with the cooling, expanding ejecta of a SN, and the velocities of the absorption features are too high to represent material in homologous expansion near a SN photosphere. However, the constant blue colors and slow evolution of the luminosity are similar to previous optically selected tidal disruption events (TDEs). The shape of the optical light curve is consistent with models for TDEs, but the minimum accreted mass necessary to power the observed luminosity is only ?0.002 M {sub ?}, which points to a partial disruption model. A full disruption model predicts higher bolometric luminosities, which would require most of the radiation to be emitted in a separate component at high energies where we lack observations. In addition, the observed temperature is lower than that predicted by pure accretion disk models for TDEs and requires reprocessing to a constant, lower temperature. Three deep non-detections in the radio with the Very Large Array over the first two years after the event set strict limits on the production of any relativistic outflow comparable to Swift J1644+57, even if off-axis.

  19. The far-ultraviolet UPS and downs of Alpha Centauri (Journal...

    Office of Scientific and Technical Information (OSTI)

    Centauri have yielded a detailed time history of far-ultraviolet (FUV: 1150-1700 ) emissions of the solarlike primary (A: G2 V) and the cooler but more active secondary (B: K1...

  20. Europium (Z=63) n=3-3 lines in the extreme ultraviolet: Na- through...

    Office of Scientific and Technical Information (OSTI)

    Title: Europium (Z63) n3-3 lines in the extreme ultraviolet: Na- through Si-like ions Authors: Trabert, E ; Beiersdorfer, P ; Hell, N ; Brown, G V Publication Date: 2014-08-22 ...

  1. Bright high-repetition-rate source of narrowband extreme-ultraviolet...

    Office of Scientific and Technical Information (OSTI)

    femtosecond extreme-ultraviolet pulses at 50-kHz repetition rate, utilizing the ... Spectral isolation of a single 72-meV-wide harmonic renders this bright, 50-kHz ...

  2. Angular distribution of ions and extreme ultraviolet emission in laser-produced tin droplet plasma

    SciTech Connect (OSTI)

    Chen, Hong; Duan, Lian; Lan, Hui; Wang, Xinbing Chen, Ziqi; Zuo, Duluo; Lu, Peixiang

    2015-05-21

    Angular-resolved ion time-of-flight spectra as well as extreme ultraviolet radiation in laser-produced tin droplet plasma are investigated experimentally and theoretically. Tin droplets with a diameter of 150 μm are irradiated by a pulsed Nd:YAG laser. The ion time-of-flight spectra measured from the plasma formed by laser irradiation of the tin droplets are interpreted in terms of a theoretical elliptical Druyvesteyn distribution to deduce ion density distributions including kinetic temperatures of the plasma. The opacity of the plasma for extreme ultraviolet radiation is calculated based on the deduced ion densities and temperatures, and the angular distribution of extreme ultraviolet radiation is expressed as a function of the opacity using the Beer–Lambert law. Our results show that the calculated angular distribution of extreme ultraviolet radiation is in satisfactory agreement with the experimental data.

  3. Interfacial chemical reaction and multiple gap state formation on three layer cathode in organic light-emitting diode: Ca/BaF{sub 2}/Alq{sub 3}

    SciTech Connect (OSTI)

    Kim, Tae Gun; Kim, Jeong Won; Lee, Hyunbok; Yi, Yeonjin; Lee, Seung Mi

    2015-07-14

    A three layer cathode is a promising stack structure for long lifetime and high efficiency in organic light-emitting diodes. The interfacial chemical reactions and their effects on electronic structures for alkaline-earth metal (Ca, Ba)/Alq{sub 3} [tris(8-hydroxyquinolinato)aluminum] and Ca/BaF{sub 2}/Alq{sub 3} are investigated using in-situ X-ray and ultraviolet photoelectron spectroscopy, as well as molecular model calculation. The BaF{sub 2} interlayer initially prevents direct contact between Alq{sub 3} and the reactive Ca metal, but it is dissociated into Ba and CaF{sub 2} by the addition of Ca. As the Ca thickness increases, the Ca penetrates the interlayer to directly participate in the reaction with the underlying Alq{sub 3}. This series of chemical reactions takes place irrespective of the BaF{sub 2} buffer layer thickness as long as the Ca overlayer thickness is sufficient. The interface reaction between the alkaline-earth metal and Alq{sub 3} generates two energetically separated gap states in a sequential manner. This phenomenon is explained by step-by-step charge transfer from the alkaline-earth metal to the lowest unoccupied molecular orbital states of Alq{sub 3}, forming new occupied states below the Fermi level.

  4. Low-Cost Light-Emitting Diode Luminaire for General Illumination...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    organic light-emitting diode (WOLED) using a single emitter on a planar glass substrate. ... A single-doped WOLED that addresses manufacturing and performance issues can help meet the ...

  5. Diffusion injected multi-quantum well light-emitting diode structure

    SciTech Connect (OSTI)

    Riuttanen, L. Nyknen, H.; Svensk, O.; Suihkonen, S.; Sopanen, M.; Kivisaari, P.; Oksanen, J.; Tulkki, J.

    2014-02-24

    The attention towards light-emitting diode (LED) structures based on nanowires, surface plasmon coupled LEDs, and large-area high-power LEDs has been increasing for their potential in increasing the optical output power and efficiency of LEDs. In this work we demonstrate an alternative way to inject charge carriers into the active region of an LED, which is based on completely different current transport mechanism compared to conventional current injection approaches. The demonstrated structure is expected to help overcoming some of the challenges related to current injection with conventional structures. A functioning III-nitride diffusion injected light-emitting diode structure, in which the light-emitting active region is located outside the pn-junction, is realized and characterized. In this device design, the charge carriers are injected into the active region by bipolar diffusion, which could also be utilized to excite otherwise challenging to realize light-emitting structures.

  6. Adhesion in flexible organic and hybrid organic/inorganic light emitting device and solar cells

    SciTech Connect (OSTI)

    Yu, D.; Kwabi, D.; Akogwu, O.; Du, J.; Oyewole, O. K.; Tong, T.; Anye, V. C.; Rwenyagila, E.; Asare, J.; Fashina, A.; Soboyejo, W. O.

    2014-08-21

    This paper presents the results of an experimental study of the adhesion between bi-material pairs that are relevant to organic light emitting devices, hybrid organic/inorganic light emitting devices, organic bulk heterojunction solar cells, and hybrid organic/inorganic solar cells on flexible substrates. Adhesion between the possible bi-material pairs is measured using force microscopy (AFM) techniques. These include: interfaces that are relevant to organic light emitting devices, hybrid organic/inorganic light emitting devices, bulk heterojunction solar cells, and hybrid combinations of titanium dioxide (TiO{sub 2}) and poly(3-hexylthiophene). The results of AFM measurements are incorporated into the Derjaguin-Muller-Toporov model for the determination of adhesion energies. The implications of the results are then discussed for the design of robust organic and hybrid organic/inorganic electronic devices.

  7. Method and apparatus for improving the performance of light emitting diodes

    DOE Patents [OSTI]

    Lowery, Christopher H.; McElfresh, David K.; Burchet, Steve; Adolf, Douglas B.; Martin, James

    1996-01-01

    A method for increasing the resistance of a light emitting diode and other semiconductor devices to extremes of temperature is disclosed. During the manufacture of the light emitting diode, a liquid coating is applied to the light emitting die after the die has been placed in its lead frame. After the liquid coating has been placed on the die and its lead frames, a thermosetting encapsulant material is placed over the coating. The operation that cures the thermosetting material leaves the coating liquid intact. As the die and the encapsulant expand and contract at different rates with respect to changes in temperature, and as in known light emitting diodes the encapsulating material adheres to the die and lead frames, this liquid coating reduces the stresses that these different rates of expansion and contraction normally cause by eliminating the adherence of the encapsulating material to the die and frame.

  8. Demonstration Assessment of Light-Emitting Diode (LED) Post-Top...

    Office of Scientific and Technical Information (OSTI)

    at Central Park in New York City Citation Details In-Document Search Title: Demonstration Assessment of Light-Emitting Diode (LED) Post-Top Lighting at Central Park in New York ...

  9. Ultraviolet light absorbers having two different chromophors in the same molecule

    DOE Patents [OSTI]

    Vogl, O.; Li, S.

    1983-10-06

    This invention relates to novel ultraviolet light absorbers having two chromophors in the same molecule, and more particularly to benzotriazole substituted dihydroxybenzophenones and acetophenones. More particularly, this invention relates to 3,5-(di(2H-benzotriazole-2-yl))-2,4-dihydroxybenzophenone and 3,5-(di(2H-benzotriazole-2-yl))-2,4-dihydroxyacetophenone which are particularly useful as an ultraviolet light absorbers.

  10. Four-mirror extreme ultraviolet (EUV) lithography projection system

    DOE Patents [OSTI]

    Cohen, Simon J; Jeong, Hwan J; Shafer, David R

    2000-01-01

    The invention is directed to a four-mirror catoptric projection system for extreme ultraviolet (EUV) lithography to transfer a pattern from a reflective reticle to a wafer substrate. In order along the light path followed by light from the reticle to the wafer substrate, the system includes a dominantly hyperbolic convex mirror, a dominantly elliptical concave mirror, spherical convex mirror, and spherical concave mirror. The reticle and wafer substrate are positioned along the system's optical axis on opposite sides of the mirrors. The hyperbolic and elliptical mirrors are positioned on the same side of the system's optical axis as the reticle, and are relatively large in diameter as they are positioned on the high magnification side of the system. The hyperbolic and elliptical mirrors are relatively far off the optical axis and hence they have significant aspherical components in their curvatures. The convex spherical mirror is positioned on the optical axis, and has a substantially or perfectly spherical shape. The spherical concave mirror is positioned substantially on the opposite side of the optical axis from the hyperbolic and elliptical mirrors. Because it is positioned off-axis to a degree, the spherical concave mirror has some asphericity to counter aberrations. The spherical concave mirror forms a relatively large, uniform field on the wafer substrate. The mirrors can be tilted or decentered slightly to achieve further increase in the field size.

  11. Ultraviolet reflector materials for solar detoxification of hazardous waste

    SciTech Connect (OSTI)

    Jorgensen, G.; Govindarajan, R.

    1991-07-01

    Organic waste detoxification requires cleavage of carbon bonds. Such reactions can be photo-driven by light that is energetic enough to disrupt such bonds. Alternately, light can be used to activate catalyst materials, which in turn can break organic bonds. In either case, photons with wavelengths less than 400 nm are required. Because the terrestrial solar resource below 400 nm is so small (roughly 3% of the available spectrum), highly efficient optical concentrators are needed that can withstand outdoor service conditions. In the past, optical elements for solar application have been designed to prevent ultraviolet (uv) radiation from reaching the reflective layer to avoid the potentially harmful effects of such light on the collector materials themselves. This effectively forfeits the uv part of the spectrum in return for some measure of protection against optical degradation. To optimize the cost/performance benefit of photochemical reaction systems, optical materials must be developed that are not only highly efficient but also inherently stable against the radiation they are designed to concentrate. The requirements of uv optical elements in terms of appropriate spectral bands and level of reflectance are established based upon the needs of photochemical applications. Relevant literature on uv reflector materials is reviewed which, along with discussions with industrial contacts, allows the establishment of a data base of currently available materials. Although a number of related technologies exist that require uv reflectors, to date little attention has been paid to achieving outdoor durability required for solar applications. 49 refs., 3 figs.

  12. Xe capillary target for laser-plasma extreme ultraviolet source

    SciTech Connect (OSTI)

    Inoue, Takahiro; Okino, Hideyasu; Nica, Petru Edward; Amano, Sho; Miyamoto, Shuji; Mochizuki, Takayasu

    2007-10-15

    A cryogenic Xe jet system with an annular nozzle has been developed in order to continuously fast supply a Xe capillary target for generating a laser-plasma extreme ultraviolet (EUV) source. The cooling power of the system was evaluated to be 54 W, and the temperature stability was {+-}0.5 K at a cooling temperature of about 180 K. We investigated experimentally the influence of pressure loss inside an annular nozzle on target formation by shortening the nozzle length. Spraying caused by cavitation was mostly suppressed by mitigating the pressure loss, and a focused jet was formed. Around a liquid-solid boundary, a solid-Xe capillary target (100/70 {mu}m {phi}) was formed with a velocity of {<=}0.01 m/s. Laser-plasma EUV generation was tested by focusing a Nd:YAG laser beam on the target. The results suggested that an even thinner-walled capillary target is required to realize the inertial confinement effect.

  13. AN EXTREME-ULTRAVIOLET WAVE ASSOCIATED WITH A SURGE

    SciTech Connect (OSTI)

    Zheng, Ruisheng; Jiang, Yunchun; Yang, Jiayan; Bi, Yi; Hong, Junchao; Yang, Bo; Yang, Dan

    2013-02-10

    Taking advantage of the high temporal and spatial resolution observations from the Solar Dynamics Observatory, we present an extreme-ultraviolet (EUV) wave associated with a surge on 2010 November 13. Due to the magnetic flux cancelation, some surges formed in the source active region (AR). The strongest surge produced our studied event. The surge was deflected by the nearby loops that connected to another AR, and disrupted the overlying loops that slowly expanded and eventually evolved into a weak coronal mass ejection (CME). The surge was likely associated with the core of the CME. The EUV wave happened after the surge deflected. The wave departed far from the flare center and showed a close location relative to the deflected surge. The wave propagated in a narrow angular extent, mainly in the ejection direction of the surge. The close timing and location relations between the EUV wave and the surge indicate that the wave was closely associated with the CME. The wave had a velocity of 310-350 km s{sup -1}, while the speeds of the surge and the expanding loops were about 130 and 150 km s{sup -1}, respectively. All of the results suggest that the EUV wave was a fast-mode wave and was most likely triggered by the weak CME.

  14. Ultraviolet photodissociation of OCS: Product energy and angular distributions

    SciTech Connect (OSTI)

    McBane, G. C. [Department of Chemistry, Grand Valley State University, Allendale, Michigan 49401 (United States); Schmidt, J. A.; Johnson, M. S. [Department of Chemistry, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen O (Denmark); Schinke, R. [Max-Planck-Institut fuer Dynamik und Selbstorganisation (MPIDS), D-37077 Goettingen (Germany)

    2013-03-07

    The ultraviolet photodissociation of carbonyl sulfide (OCS) was studied using three-dimensional potential energy surfaces and both quantum mechanical dynamics calculations and classical trajectory calculations including surface hopping. The transition dipole moment functions used in an earlier study [J. A. Schmidt, M. S. Johnson, G. C. McBane, and R. Schinke, J. Chem. Phys. 137, 054313 (2012)] were improved with more extensive treatment of excited electronic states. The new functions indicate a much larger contribution from the 1 {sup 1}A{sup Double-Prime} state ({sup 1}{Sigma}{sup -} in linear OCS) than was found in the previous work. The new transition dipole functions yield absorption spectra that agree with experimental data just as well as the earlier ones. The previously reported potential energy surfaces were also empirically modified in the region far from linearity. The resulting product state distributions P{sub v,j}, angular anisotropy parameters {beta}(j), and carbon monoxide rotational alignment parameters A{sub 0}{sup (2)}(j) agree reasonably well with the experimental results, while those computed from the earlier transition dipole and potential energy functions do not. The higher-j peak in the bimodal rotational distribution is shown to arise from nonadiabatic transitions from state 2 {sup 1}A{sup Prime} to the OCS ground state late in the dissociation.

  15. Graphene defect formation by extreme ultraviolet generated photoelectrons

    SciTech Connect (OSTI)

    Gao, A. Lee, C. J.; Bijkerk, F.

    2014-08-07

    We have studied the effect of photoelectrons on defect formation in graphene during extreme ultraviolet (EUV) irradiation. Assuming the major role of these low energy electrons, we have mimicked the process by using low energy primary electrons. Graphene is irradiated by an electron beam with energy lower than 80?eV. After e-beam irradiation, it is found that the D peak, I(D), appears in the Raman spectrum, indicating defect formation in graphene. The evolution of I(D)/I(G) follows the amorphization trajectory with increasing irradiation dose, indicating that graphene goes through a transformation from microcrystalline to nanocrystalline and then further to amorphous carbon. Further, irradiation of graphene with increased water partial pressure does not significantly change the Raman spectra, which suggests that, in the extremely low energy range, e-beam induced chemical reactions between residual water and graphene are not the dominant mechanism driving defect formation in graphene. Single layer graphene, partially suspended over holes was irradiated with EUV radiation. By comparing with the Raman results from e-beam irradiation, it is concluded that the photoelectrons, especially those from the valence band, contribute to defect formation in graphene during irradiation.

  16. Electromagnetically induced transparency in paraffin-coated vapor cells

    SciTech Connect (OSTI)

    Klein, M.; Hohensee, M.; Walsworth, R. L. [Harvard-Smithsonian Center for Astrophysics, Cambridge, Massachusetts 02138 (United States); Department of Physics, Harvard University, Cambridge, Massachusetts 02138 (United States); Phillips, D. F. [Harvard-Smithsonian Center for Astrophysics, Cambridge, Massachusetts 02138 (United States)

    2011-01-15

    Antirelaxation coatings in atomic vapor cells allow ground-state coherent spin states to survive many collisions with the cell walls. This reduction in the ground-state decoherence rate gives rise to ultranarrow-bandwidth features in electromagnetically induced transparency (EIT) spectra, which can form the basis of, for example, long-time scale slow and stored light, sensitive magnetometers, and precise frequency standards. Here we study, both experimentally and theoretically, how Zeeman EIT contrast and width in paraffin-coated rubidium vapor cells are determined by cell and laser-beam geometry, laser intensity, and atomic density. Using a picture of Ramsey pulse sequences, where atoms alternately spend ''bright'' and ''dark'' time intervals inside and outside the laser beam, we explain the behavior of EIT features in coated cells, highlighting their unique characteristics and potential applications.

  17. Geodesic-dome tank roof cuts water contamination, vapor losses

    SciTech Connect (OSTI)

    Barrett, A.E. )

    1989-07-10

    Colonial Pipeline Co. has established an ongoing program for using geodesic-dome roofs on tanks in liquid petroleum-product service. As its standard, Colonial adopted geodesicodone roofs, in conjunction with internal floating decks, to replace worn external floating roofs on existing tanks used in gasoline service and for use on new tanks in all types of product service. Geodesic domes are clear-span structures requiring no internal-support columns. This feature allows the associated use of a floating deck that is as vapor tight as is possible to construct. Further, geodesic domes can practically eliminate rainwater contamination, eliminate wind-generated vapor losses, and greatly reduce filling losses associated with conventional external floating roofs.

  18. Fabrication of solid oxide fuel cell by electrochemical vapor deposition

    DOE Patents [OSTI]

    Brian, Riley; Szreders, Bernard E.

    1989-01-01

    In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (approximately 1100.degree.-1300.degree. C.) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20-50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

  19. Heterogeneous nucleation of naphthalene vapor on water surface

    SciTech Connect (OSTI)

    Smolik, J.; Schwarz, J.

    1997-01-15

    Transfer processes between drops and gas play an important role in many natural and industrial processes, as absorption of gaseous pollutants by water drops in the atmosphere, combustion of fuel droplets, spray drying, synthesis of nanopowders, wet-dry desulfurization or extinguishing of hot combustion gases. The evaporation of a water drop into a ternary gaseous mixture of air, steam, and naphthalene vapor was investigated. The experimental results were compared with a theoretical prediction based on a numerical solution of coupled boundary layer equations for heat and mass transfer from a drop moving in ternary gas. In the experiments the naphthalene vapor condensed on the water drop as a supercooled liquid even at temperatures far below the melting point of naphthalene. The condensation on drop surface is discussed in terms of classical theory of heterogeneous nucleation on smooth surfaces.

  20. Fabrication of solid oxide fuel cell by electrochemical vapor deposition

    DOE Patents [OSTI]

    Riley, B.; Szreders, B.E.

    1988-04-26

    In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (/approximately/1100/degree/ /minus/ 1300/degree/C) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20--50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

  1. Piston pump and method of reducing vapor lock

    DOE Patents [OSTI]

    Phillips, Benjamin A.; Harvey, Michael N.

    2000-02-15

    A pump includes a housing defining a cavity, at least one bore, a bore inlet, and a bore outlet. The bore extends from the cavity to the outlet and the inlet communicates with the bore at a position between the cavity and the outlet. A crankshaft is mounted in supports and has an eccentric portion disposed in the cavity. The eccentric portion is coupled to a piston so that rotation of the crankshaft reciprocates the piston in the bore between a discharge position an intake position. The bore may be offset from an axis of rotation to reduce bending of the piston during crankshaft rotation. During assembly of the pump, separate parts of the housing can be connected together to facilitate installation of internal pumping components. Also disclosed is a method of reducing vapor lock by mixing vapor and liquid portions of a substance and introducing the mixture into a piston bore.

  2. Piston pump and method of reducing vapor lock

    DOE Patents [OSTI]

    Phillips, Benjamin A.; Harvey, Michael N.

    2001-01-30

    A pump includes a housing defining a cavity, at least one bore, a bore inlet, and a bore outlet. The bore extends from the cavity to the outlet and the inlet communicates with the bore at a position between the cavity and the outlet. A crankshaft is mounted in supports and has an eccentric portion disposed in the cavity. The eccentric portion is coupled to a piston so that rotation of the crankshaft reciprocates the piston in the bore between a discharge position an intake position. The bore may be offset from an axis of rotation to reduce bending of the piston during crankshaft rotation. During assembly of the pump, separate parts of the housing can be connected together to facilitate installation of internal pumping components. Also disclosed is a method of reducing vapor lock by mixing vapor and liquid portions of a substance and introducing the mixture into a piston bore.

  3. Method for the generation of variable density metal vapors which bypasses the liquidus phase

    DOE Patents [OSTI]

    Kunnmann, Walter; Larese, John Z.

    2001-01-01

    The present invention provides a method for producing a metal vapor that includes the steps of combining a metal and graphite in a vessel to form a mixture; heating the mixture to a first temperature in an argon gas atmosphere to form a metal carbide; maintaining the first temperature for a period of time; heating the metal carbide to a second temperature to form a metal vapor; withdrawing the metal vapor and the argon gas from the vessel; and separating the metal vapor from the argon gas. Metal vapors made using this method can be used to produce uniform powders of the metal oxide that have narrow size distribution and high purity.

  4. Fixation of nitrogen in the presence of water vapor

    DOE Patents [OSTI]

    Harteck, Paul

    1984-01-01

    A process for the fixation of nitrogen is disclosed which comprises combining a mixture of nitrogen, oxygen, metal oxide and water vapor, initially heating the combination to initiate a reaction which forms nitrate, but at a temperature and pressure range below the dissociation pressure of the nitrate. With or without the water component, the yield of fixed nitrogen is increased by the use of a Linde Molecular Sieve Catalyst.

  5. High average power magnetic modulator for metal vapor lasers

    DOE Patents [OSTI]

    Ball, Don G.; Birx, Daniel L.; Cook, Edward G.; Miller, John L.

    1994-01-01

    A three-stage magnetic modulator utilizing magnetic pulse compression designed to provide a 60 kV pulse to a copper vapor laser at a 4.5 kHz repetition rate is disclosed. This modulator operates at 34 kW input power. The circuit includes a step up auto transformer and utilizes a rod and plate stack construction technique to achieve a high packing factor.

  6. System for the removal of contaminant soil-gas vapors

    DOE Patents [OSTI]

    Weidner, J.R.; Downs, W.C.; Kaser, T.G.; Hall, H.J.

    1997-12-16

    A system extracts contaminated vapors from soil or other subsurface regions by using changes in barometric pressure to operate sensitive check valves that control air entry and removal from wells in the ground. The system creates an efficient subterranean flow of air through a contaminated soil plume and causes final extraction of the contaminants from the soil to ambient air above ground without any external energy sources. 4 figs.

  7. System for the removal of contaminant soil-gas vapors

    DOE Patents [OSTI]

    Weidner, Jerry R.; Downs, Wayne C.; Kaser, Timothy G.; Hall, H. James

    1997-01-01

    A system extracts contaminated vapors from soil or other subsurface regions by using changes in barometric pressure to operate sensitive check valves that control air entry and removal from wells in the ground. The system creates an efficient subterranean flow of air through a contaminated soil plume and causes final extraction of the contaminants from the soil to ambient air above ground without any external energy sources.

  8. Understanding Drooping Light Emitting Diodes CEEM | U.S. DOE Office of

    Office of Science (SC) Website

    Science (SC) Understanding Drooping Light Emitting Diodes CEEM Energy Frontier Research Centers (EFRCs) EFRCs Home Centers Research Science Highlights Highlight Archives News & Events Publications History Contact BES Home 04.27.12 Understanding Drooping Light Emitting Diodes CEEM Print Text Size: A A A FeedbackShare Page Scientific Achievement New calculations demonstrate that LED "droop" is dominated by multi-particle interactions. Droop occurs when increasing energy input

  9. Energy Savings Estimates of Light Emitting Diodes in Niche Lighting Applications

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Estimates of Light Emitting Diodes in Niche Lighting Applications Prepared for: Building Technologies Program Office of Energy Efficiency and Renewable Energy U.S. Department of Energy Prepared by: Navigant Consulting Inc. 1801 K Street, NW Suite 500 Washington DC, 20006 September 2008 * Department of Energy Washington, DC 20585 Energy Savings Estimates of Light Emitting Diodes in Niche Lighting Applications Released: September 2008 Revised: October 2008 This DOE report presents research

  10. Integration of photoactive and electroactive components with vertical cavity surface emitting lasers

    DOE Patents [OSTI]

    Bryan, Robert P.; Esherick, Peter; Jewell, Jack L.; Lear, Kevin L.; Olbright, Gregory R.

    1997-01-01

    A monolithically integrated optoelectronic device is provided which integrates a vertical cavity surface emitting laser and either a photosensitive or an electrosensitive device either as input or output to the vertical cavity surface emitting laser either in parallel or series connection. Both vertical and side-by-side arrangements are disclosed, and optical and electronic feedback means are provided. Arrays of these devices can be configured to enable optical computing and neural network applications.

  11. Integration of photoactive and electroactive components with vertical cavity surface emitting lasers

    DOE Patents [OSTI]

    Bryan, R.P.; Esherick, P.; Jewell, J.L.; Lear, K.L.; Olbright, G.R.

    1997-04-29

    A monolithically integrated optoelectronic device is provided which integrates a vertical cavity surface emitting laser and either a photosensitive or an electrosensitive device either as input or output to the vertical cavity surface emitting laser either in parallel or series connection. Both vertical and side-by-side arrangements are disclosed, and optical and electronic feedback means are provided. Arrays of these devices can be configured to enable optical computing and neural network applications. 9 figs.

  12. High-Efficiency and Stable White Organic Light-Emitting Diode Using a

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Single Emitter | Department of Energy and Stable White Organic Light-Emitting Diode Using a Single Emitter High-Efficiency and Stable White Organic Light-Emitting Diode Using a Single Emitter Lead Performer: Arizona State University - Tempe, AZ DOE Total Funding: $664,785 Cost Share: $170,547 Project Term: 10/1/2011 - 9/30/2015 Funding Opportunity: Solid State Lighting Core Technology Funding Opportunity Announcement (DE-FOA- 0000329) Project Objective This project will demonstrate an

  13. DOE Science Showcase - Light-emitting Diode (LED) Lighting Research | OSTI,

    Office of Scientific and Technical Information (OSTI)

    US Dept of Energy Office of Scientific and Technical Information Light-emitting Diode (LED) Lighting Research Light-emitting diode (LED) lighting is a type of solid-state lighting that uses a semiconductor to convert electricity to light. LED lighting products are beginning to appear in a wide variety of home, business, and industrial products such as holiday lighting, replacement bulbs for incandescent lamps, street lighting, outdoor area lighting and indoor ambient lighting. Over the past

  14. Program plan for the resolution of tank vapor issues

    SciTech Connect (OSTI)

    Osborne, J.W.; Huckaby, J.L.

    1994-05-01

    Since 1987, workers at the Hanford Site waste tank farms in Richland, Washington, have reported strong odors emanating from the large, underground high-level radioactive waste storage tanks. Some of these workers have complained of symptoms (e.g., headaches, nausea) related to the odors. In 1992, the U.S. Department of Energy, which manages the Hanford Site, and Westinghouse Hanford Company determined that the vapor emissions coming from the tanks had not been adequately characterized and represented a potential health risk to workers in the immediate vicinity of the tanks. At that time, workers in certain areas of the tank farms were required to use full-face, supplied-breathing-air masks to reduce their exposure to the fugitive emissions. While use of supplied breathing air reduced the health risks associated with the fugitive emissions, it introduced other health and safety risks (e.g., reduced field of vision, air-line tripping hazards, and heat stress). In 1992, an aggressive program was established to assure proper worker protection while reducing the use of supplied breathing air. This program focuses on characterization of vapors inside the tanks and industrial hygiene monitoring in the tank farms. If chemical filtration systems for mitigation of fugitive emissions are deemed necessary, the program will also oversee their design and installation. This document presents the plans for and approach to resolving the Hanford Site high-level waste tank vapor concerns. It is sponsored by the Department of Energy Office of Environmental Restoration and Waste Management.

  15. Method of and apparatus for measuring vapor density

    DOE Patents [OSTI]

    Nelson, Loren D. (Morrison, CO); Cerni, Todd A. (Littleton, CO)

    1989-01-01

    Apparatus and method determine the concentration of an individual component, such as water vapor, of a multi-component mixture, such as a gaseous mixture for cooling a nuclear reactor. A hygrometer apparatus includes an infrared source for producing a broadband infrared energy beam that includes a strong water vapor absorption band and a weak water vapor absorption region. The beam is chopped to select infrared pulses. A temporally first pulse has a wavelength in the weakly absorbing region, a temporally second pulse has a wavelength in the strong band and a temporally third pulse has a wavlength in the weakly absorbing region. A fourth reference pulse representing background radiation is interposed in such chopped pulses. An indium arsenide infrared sensor is responsive to the pulses for generating an output signal in proportion to: ##EQU1## where N1 is proportional to the transmission through the sample of the first signal, N4 is related to the background radiation, and [K2 (N2-N4)+K3 (N3-N4)] is the time-weighted average of the transmission through the sample of the second and third pulses applicable at the time of the second pulse, with the reference pulse N4 being subtracted in each case to render the ratio independent of variations in the background radiation.

  16. Method of and apparatus for measuring vapor density

    DOE Patents [OSTI]

    Nelson, L.D.; Cerni, T.A.

    1989-10-17

    Apparatus and method are disclosed which determine the concentration of an individual component, such as water vapor, of a multi-component mixture, such as a gaseous mixture for cooling a nuclear reactor. A hygrometer apparatus includes an infrared source for producing a broadband infrared energy beam that includes a strong water vapor absorption band and a weak water vapor absorption region. The beam is chopped to select infrared pulses. A temporally first pulse has a wavelength in the weakly absorbing region, a temporally second pulse has a wavelength in the strong band and a temporally third pulse has a wavelength in the weakly absorbing region. A fourth reference pulse representing background radiation is interposed in such chopped pulses. An indium arsenide infrared sensor is responsive to the pulses for generating an output signal in proportion to an equation given in the patent where N1 is proportional to the transmission through the sample of the first signal, N4 is related to the background radiation, and [K2 (N2-N4) + K3 (N3-N4)] is the time-weighted average of the transmission through the sample of the second and third pulses applicable at the time of the second pulse, with the reference pulse N4 being subtracted in each case to render the ratio independent of variations in the background radiation. 11 figs.

  17. Evaporation monitoring and composition control of alloy systems with widely differing vapor pressures

    SciTech Connect (OSTI)

    Anklam, T.M.; Berzins, L.V.; Braun, D.G.; Haynam, C.; McClelland, M.A.; Meier, T.

    1994-10-01

    Lawrence Livermore National Laboratory is developing sensors and controls to improve and extend electron beam materials processing technology to alloy systems with constituents of widely varying vapor pressure. The approach under development involves using tunable lasers to measure the density and composition of the vapor plume. A laser based vaporizer control system for vaporization of a uranium-iron alloy has been previously demonstrated in multi-hundred hour, high rate vaporization experiments at LLNL. This paper reviews the design and performance of the uranium vaporization sensor and control system and discusses the extension of the technology to monitoring of uranium vaporization. Data is presented from an experiment in which titanium wire was fed into a molten niobium pool. Laser data is compared to deposited film composition and film cross sections. Finally, the potential for using this technique for composition control in melting applications is discussed.

  18. Luminescent properties of Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} and its potential application in white light emitting diodes

    SciTech Connect (OSTI)

    Wang, Zhijun; Li, Panlai; Li, Ting; Zhang, Xing; Li, Qingxuan; Yang, Zhiping; Guo, Qinglin

    2013-06-01

    Graphical abstract: Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} phosphor can be effectively excited by an ultraviolet and near-ultraviolet light, and produce a bright blue emission centered at 436 nm. The CIE chromaticity coordinations (x, y) of Na{sub 2}CaSiO{sub 4}:Eu{sup 2+}(NSCE)/Li{sub 2}SrSiO{sub 4}:Eu{sup 2+}(LSSE) vary with the molar ratio of the two constituents. When NSCE/LSSE is 1:3, the CIE chromaticity coordination is (0.332, 0.346), which is close to that of the natural sunlight (0.33, 0.33). The results indicate that Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} may be a promising blue phosphor for UV chip-based multi-phosphor converted white light emitting diodes. Highlights: ? Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} shows the blue emission with a peak at 436 nm and broad excitation band in the UV/n-UV range. ? White light with CIE coordinates (0.332, 0.346) is generated by mixing the blue phosphor with the Li{sub 2}SrSiO{sub 4}:Eu{sup 2+} yellow phosphor. ? Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} would be a promising blue phosphor candidate for UV chip-based multi-phosphor converted white LEDs. - Abstract: A novel blue phosphor Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} is synthesized by a high temperature solid-state reaction, and its luminescent properties are systematically studied. Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} can be effectively excited by the 354 nm radiation, and create blue emission (436 nm). The emission intensity of Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} is influenced by the Eu{sup 2+} doping content, and the optimal doping content is 1.5%, and the concentration quenching mechanism of Eu{sup 2+} in Na{sub 2}CaSiO{sub 4} can be attributed to the multipolar interaction. The white light with CIE coordinates (0.332, 0.346) is generated by mixing the blue phosphor Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} with the yellow phosphor Li{sub 2}SrSiO{sub 4}:Eu{sup 2+}. The results indicate that Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} may be a potential blue emitting phosphor for UV chip-based multi

  19. Tank 241-BY-111 headspace gas and vapor characterization results for samples collected in May 1994 and November 1994

    SciTech Connect (OSTI)

    Huckaby, J.L.; Bratzel, D.R.

    1995-09-28

    Significant changes have been made to all of the original vapor characterization reports. This report documents specific headspace gas and vapor characterization results for all vapor sampling events to date. In addition, changes have been made to the original vapor reports to qualify the data based on quality assurance issues associated with the performing laboratories

  20. Tank 241-C-111 headspace gas and vapor characterization results for samples collected in August 1993 and September 1994

    SciTech Connect (OSTI)

    Huckaby, J.L.; Bratzel, D.R.

    1995-09-01

    Significant changes have been made to all of the original vapor characterization reports. This report documents specific headspace gas and vapor characterization results for all vapor sampling events to date. In addition, changes have been made to the original vapor reports to qualify the data based on quality assurance issues associated with the performing laboratories.