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Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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1

Vapor deposition of hardened niobium  

DOE Patents [OSTI]

A method of coating ceramic nuclear fuel particles containing a major amount of an actinide ceramic in which the particles are placed in a fluidized bed maintained at ca. 800.degree. to ca. 900.degree. C., and niobium pentachloride vapor and carbon tetrachloride vapor are led into the bed, whereby niobium metal is deposited on the particles and carbon is deposited interstitially within the niobium. Coating apparatus used in the method is also disclosed.

Blocher, Jr., John M. (Columbus, OH); Veigel, Neil D. (Columbus, OH); Landrigan, Richard B. (Columbus, OH)

1983-04-19T23:59:59.000Z

2

Vapor deposition of thin films  

DOE Patents [OSTI]

A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

Smith, David C. (Los Alamos, NM); Pattillo, Stevan G. (Los Alamos, NM); Laia, Jr., Joseph R. (Los Alamos, NM); Sattelberger, Alfred P. (Los Alamos, NM)

1992-01-01T23:59:59.000Z

3

Enabling integration of vapor-deposited polymer thin films  

E-Print Network [OSTI]

Initiated Chemical Vapor Deposition (iCVD) is a versatile, one-step process for synthesizing conformal and functional polymer thin films on a variety of substrates. This thesis emphasizes the development of tools to further ...

Petruczok, Christy D. (Christy Danielle)

2014-01-01T23:59:59.000Z

4

Chemical vapor deposition of functionalized isobenzofuran polymers  

E-Print Network [OSTI]

This thesis develops a platform for deposition of polymer thin films that can be further tailored by chemical surface modification. First, we explore chemical vapor deposition of functionalized isobenzofuran films using ...

Olsson, Ylva Kristina

2007-01-01T23:59:59.000Z

5

Chemical vapor deposition of antimicrobial polymer coatings  

E-Print Network [OSTI]

There is large and growing interest in making a wide variety of materials and surfaces antimicrobial. Initiated chemical vapor deposition (iCVD), a solventless low-temperature process, is used to form thin films of polymers ...

Martin, Tyler Philip, 1977-

2007-01-01T23:59:59.000Z

6

Real-time growth rate metrology for a tungsten chemical vapor deposition process by acoustic sensing  

E-Print Network [OSTI]

to a production-scale tungsten chemical vapor deposition cluster tool for in situ process sensing. Process gasesReal-time growth rate metrology for a tungsten chemical vapor deposition process by acoustic to achieve run-to-run process control of the deposited tungsten film thickness. © 2001 American Vacuum

Rubloff, Gary W.

7

Chemical vapor deposition of mullite coatings  

DOE Patents [OSTI]

This invention is directed to the creation of crystalline mullite coatings having uniform microstructure by chemical vapor deposition (CVD). The process comprises the steps of establishing a flow of reactants which will yield mullite in a CVD reactor, and depositing a crystalline coating from the reactant flow. The process will yield crystalline coatings which are dense and of uniform thickness.

Sarin, Vinod (Lexington, MA); Mulpuri, Rao (Boston, MA)

1998-01-01T23:59:59.000Z

8

Chemical vapor deposition of epitaxial silicon  

DOE Patents [OSTI]

A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

Berkman, Samuel (Florham Park, NJ)

1984-01-01T23:59:59.000Z

9

OPTIMAL DESIGN OF A HIGH PRESSURE ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION REACTOR  

E-Print Network [OSTI]

OPTIMAL DESIGN OF A HIGH PRESSURE ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION REACTOR K.J. BACHMANN of computer simulations as an optimal design tool which lessens the costs in time and effort in experimental vapor deposition (HPOMCVD) reactor for use in thin film crystal growth. The advantages of such a reactor

10

Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia  

E-Print Network [OSTI]

pressure chemical vapor deposition. Experiments were conducted in a belt furnace; static experiments, in particular, is used for tool coating, solar-control films, and micro- electronic applications. Optically

11

Apparatus and method for photochemical vapor deposition  

DOE Patents [OSTI]

A photochemical vapor deposition apparatus includes a reactor housing having a window in one wall above a reaction chamber in the housing. A transparent curtain divides the reaction chamber into a reaction zone and a flush zone. At least one substrate is mounted in the reaction zone in light communication with the window so that ultraviolet radiation may penetrate through the window into the reaction zone. The window is kept clear by a gas flowing through the flush zone.

Jackson, Scott C. (Wilmington, DE); Rocheleau, Richard E. (Wilmington, DE)

1987-03-31T23:59:59.000Z

12

Chemical vapor deposition of group IIIB metals  

DOE Patents [OSTI]

Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula given in the patent where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula 1 is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula 1 and a heat decomposable tellurium compound under nonoxidizing conditions.

Erbil, A.

1989-11-21T23:59:59.000Z

13

All graphene electromechanical switch fabricated by chemical vapor deposition  

E-Print Network [OSTI]

We demonstrate an electromechanical switch comprising two polycrystalline graphene films; each deposited using ambient pressure chemical vapor deposition. The top film is pulled into electrical contact with the bottom film ...

Milaninia, Kaveh M.

14

Initiated chemical vapor deposition of functional polyacrylic thin films  

E-Print Network [OSTI]

Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<200?C) ...

Mao, Yu, 1975-

2005-01-01T23:59:59.000Z

15

Chemical vapor deposition thin films as biopassivation coatings and directly patternable dielectrics  

E-Print Network [OSTI]

Organosilicon thin films deposited by pulsed plasma-enhanced chemical vapor deposition (PPECVD) and hot-filament chemical vapor deposition (HFCVD) were investigated as potential biopassivation coatings for neural probes. ...

Pryce Lewis, Hilton G. (Hilton Gavin), 1973-

2001-01-01T23:59:59.000Z

16

E-Print Network 3.0 - arc vapor deposition Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

has been produced... al Vaporization and melting of materials in fusion devices 325 ENERGY DEPOSITED (Jcm21 Figure 3... VAPORIZATION AND MELTING OF MATERIALS IN FUSION...

17

Fabrication of solid oxide fuel cell by electrochemical vapor deposition  

DOE Patents [OSTI]

In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (/approximately/1100/degree/ /minus/ 1300/degree/C) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20--50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

Riley, B.; Szreders, B.E.

1988-04-26T23:59:59.000Z

18

Fabrication of solid oxide fuel cell by electrochemical vapor deposition  

DOE Patents [OSTI]

In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (approximately 1100.degree.-1300.degree. C.) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20-50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

Brian, Riley (Willimantic, CT); Szreders, Bernard E. (Oakdale, CT)

1989-01-01T23:59:59.000Z

19

Ceramic-metallic coatings by electron beam physical vapor deposition (EB-PVD) process  

SciTech Connect (OSTI)

Electron Beam Physical Vapor Deposition (EB-PVD) process is considered to be a technology that has overcome some of the difficulties or problems associated with the chemical vapor deposition (CVD), physical vapor deposition (PVD) and metal spray processes. The EB-PVD process offers many desirable characteristics such as relatively high deposition rates (up to 100-150 {mu}m/minute with an evaporation rate {approx}10-15 Kg/hour,) dense coatings, precise compositional control, columnar and poly-crystalline microstructure, low contamination, and high thermal efficiency. Various metallic and ceramic coatings (oxides, carbides, nitrides) can be deposited at relatively low temperatures. Even elements with low vapor pressure such as molybdenum, tungsten, and carbon are readily evaporated by this process. In addition, EB-PVD is capable of producing multi-layered laminated metallic/ceramic coatings on large components by changing the EB-PVD processing conditions such as ingot composition, part manipulation, and electron beam energy. Attachment of an ion assisted beam source to the EB-PVD offers additional benefits such as dense coatings with improved adhesion. In addition, textured coatings can be obtained that are desirable in many applications such as cutting tools. This laboratory has started a new thrust in the coating area by the EB-PVD process. The microstructure of thermal barrier ceramic coatings (i.e., yttria stabilized zirconia) developed by the EB-PVD process will be presented.

Wolfe, D.E.; Singh, J. [Pennsylvania State Univ., State College, PA (United States)

1995-12-31T23:59:59.000Z

20

Chemical vapor deposition of aluminum oxide  

DOE Patents [OSTI]

An aluminum oxide film is deposited on a heated substrate by CVD from one or more alkylaluminum alkoxide compounds having composition R.sub.n Al.sub.2 (OR').sub.6-n, wherein R and R' are alkyl groups and n is in the range of 1 to 5.

Gordon, Roy (Cambridge, MA); Kramer, Keith (Cleveland, OH); Liu, Xinye (Cambridge, MA)

2000-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

DIAMOND CHEMICAL VAPOR DEPOSITION Nucleation and Early Growth Stages  

E-Print Network [OSTI]

a reality. Epi- taxial diamond has been grown on diamond and cubic-BN. Polycrystalline diamond films haveDIAMOND CHEMICAL VAPOR DEPOSITION Nucleation and Early Growth Stages by Huimin Liu David S. Dandy of high-quality diamond coatings on preshaped parts and synthesis of free-standing shapes of diamond

Dandy, David

22

Amine functionalization by initiated chemical vapor deposition (iCVD) for interfacial adhesion and film cohesion  

E-Print Network [OSTI]

Amine functional polymer thin films provide a versatile platform for subsequent functionalization because of their diverse reactivity. Initiated chemical vapor deposition (iCVD) is a polymer chemical vapor deposition ...

Xu, Jingjing, Ph. D. Massachusetts Institute of Technology

2011-01-01T23:59:59.000Z

23

Metalorganic chemical vapor deposition of carbon-free ZnO using...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Metalorganic chemical vapor deposition of carbon-free ZnO using the bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc precursor. Metalorganic chemical vapor deposition of carbon-free...

24

Combustion chemical vapor deposited coatings for thermal barrier coating systems  

SciTech Connect (OSTI)

The new deposition process, combustion chemical vapor deposition, shows a great deal of promise in the area of thermal barrier coating systems. This technique produces dense, adherent coatings, and does not require a reaction chamber. Coatings can therefore be applied in the open atmosphere. The process is potentially suitable for producing high quality CVD coatings for use as interlayers between the bond coat and thermal barrier coating, and/or as overlayers, on top of thermal barrier coatings. In this report, the evaluation of alumina and ceria coatings on a nickel-chromium alloy is described.

Hampikian, J.M.; Carter, W.B. [Georgia Institute of Technology, Atlanta, GA (United States). School of Materials Science and Engineering

1995-12-31T23:59:59.000Z

25

Initiated chemical vapor deposition of polymeric thin films : mechanism and applications  

E-Print Network [OSTI]

Initiated chemical vapor deposition (iCVD) is a novel technique for depositing polymeric thin films. It is able to deposit thin films of application-specific polymers in one step without using any solvents. Its uniqueness ...

Chan, Kelvin, Ph. D. Massachusetts Institute of Technology

2005-01-01T23:59:59.000Z

26

Method of physical vapor deposition of metal oxides on semiconductors  

DOE Patents [OSTI]

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Norton, David P. (Knoxville, TN)

2001-01-01T23:59:59.000Z

27

Chemical Vapor Deposited Zinc Sulfide. SPIE Press Monograph  

SciTech Connect (OSTI)

Zinc sulfide has shown unequaled utility for infrared windows that require a combination of long-wavelength infrared transparency, mechanical durability, and elevated-temperature performance. This book reviews the physical properties of chemical vapor deposited ZnS and their relationship to the CVD process that produced them. An in-depth look at the material microstructure is included, along with a discussion of the material's optical properties. Finally, because the CVD process itself is central to the development of this material, a brief history is presented.

McCloy, John S.; Tustison, Randal W.

2013-04-22T23:59:59.000Z

28

Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition  

SciTech Connect (OSTI)

We report on thermopower (TEP) and resistance measurements of inhomogeneous graphene grown by chemical vapor deposition (CVD). Unlike the conventional resistance of pristine graphene, the gate-dependent TEP shows a large electron-hole asymmetry. This can be accounted for by inhomogeneity of the CVD-graphene where individual graphene regions contribute with different TEPs. At the high magnetic field and low temperature, the TEP has large fluctuations near the Dirac point associated with the disorder in the CVD-graphene. TEP measurements reveal additional characteristics of CVD-graphene, which are difficult to obtain from the measurement of resistance alone.

Nam, Youngwoo, E-mail: youngwoo.nam@chalmers.se [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Sun, Jie; Lindvall, Niclas; Yurgens, August [Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Jae Yang, Seung; Rae Park, Chong [Department of Materials Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of); Woo Park, Yung [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)

2014-01-13T23:59:59.000Z

29

Quaternary Borate Deposits As A Geothermal Exploration Tool In...  

Open Energy Info (EERE)

Borate Deposits As A Geothermal Exploration Tool In The Great Basin Abstract A close spatial relationship exists between Quaternary borate deposits and moderate to high...

30

Role of gas phase reactions in subatmospheric chemical-vapor deposition ozone/TEOS processes for oxide deposition  

E-Print Network [OSTI]

-vapor deposition. Our results for oxide deposition show optimum process window around 200 Torr for producing films a po- tentially optimum process window in which film properties, deposition rates, film uniformity requires high quality dielectric films that can be deposited rapidly and conformally on high aspect ratio

Rubloff, Gary W.

31

Synthesis and Characterization of Magnetic Nanowires Prepared by Chemical Vapor Deposition.  

E-Print Network [OSTI]

??Various metal silicide and germanide magnetic nanowires were synthesized using a home-built CVD [chemical vapor deposition] system. The morphology, composition, and magnetic properties of the… (more)

Tang, Siwei

2014-01-01T23:59:59.000Z

32

Chemical vapor deposition of organosilicon composite thin films for porous low-k dielectrics  

E-Print Network [OSTI]

Pulsed plasma enhanced chemical vapor deposition has produced organosilicon thin films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Both diethylsilane and ...

Ross, April Denise, 1977-

2005-01-01T23:59:59.000Z

33

Oxidative chemical vapor deposition of conductive polymers for use in novel photovoltaic device architectures  

E-Print Network [OSTI]

The conductive polymer poly(3,4-ethylenedioxythiophene), (PEDOT), deposited via oxidative chemical vapor deposition (oCVD) has been investigated for use in organic electronic devices. The oCVD process as well as the ...

Howden, Rachel M. (Rachel Mary)

2013-01-01T23:59:59.000Z

34

Plasma Enhanced Chemical Vapor Deposition on Living Substrates: Development, Characterization, and Biological Applications  

E-Print Network [OSTI]

This dissertation proposed the idea of “plasma-enhanced chemical vapor deposition on living substrates (PECVD on living substrates)” to bridge the gap between the thin film deposition technology and the biological and living substrates. This study...

Tsai, Tsung-Chan 1982-

2012-12-05T23:59:59.000Z

35

Strain relaxation in graphene grown by chemical vapor deposition  

SciTech Connect (OSTI)

The growth of single layer graphene by chemical vapor deposition on polycrystalline Cu substrates induces large internal biaxial compressive strain due to thermal expansion mismatch. Raman backscattering spectroscopy and atomic force microscopy were used to study the strain relaxation during and after the transfer process from Cu foil to SiO{sub 2}. Interestingly, the growth of graphene results in a pronounced ripple structure on the Cu substrate that is indicative of strain relaxation of about 0.76% during the cooling from the growth temperature. Removing graphene from the Cu substrates and transferring it to SiO{sub 2} results in a shift of the 2D phonon line by 27?cm{sup ?1} to lower frequencies. This translates into additional strain relaxation. The influence of the processing steps, used etching solution and solvents on strain, is investigated.

Troppenz, Gerald V., E-mail: gerald.troppenz@helmholtz-berlin.de; Gluba, Marc A.; Kraft, Marco; Rappich, Jörg; Nickel, Norbert H. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institut für Silizium Photovoltaik, Kekuléstr. 5, D-12489 Berlin (Germany)

2013-12-07T23:59:59.000Z

36

Field emission properties of chemical vapor deposited individual graphene  

SciTech Connect (OSTI)

Here, we report field emission (FE) properties of a chemical vapor deposited individual graphene investigated by in-situ transmission electron microscopy. Free-standing bilayer graphene is mounted on a cathode microprobe and FE processes are investigated varying the vacuum gap of cathode and anode. The threshold field for 10?nA current were found to be 515, 610, and 870?V/?m for vacuum gap of 400, 300, and 200?nm, respectively. It is observed that the structural stability of a high quality bilayer graphene is considerably stable during emission process. By contacting the nanoprobe with graphene and applying a bias voltage, structural deformation and buckling are observed with significant rise in temperature owing to Joule heating effect. The finding can be significant for practical application of graphene related materials in emitter based devices as well as understanding the contact resistance influence and heating effect.

Zamri Yusop, Mohd [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Department of Materials, Faculty of Mechanical Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Center for Fostering Young and Innovative Researchers, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Yaakob, Yazid; Takahashi, Chisato; Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan)

2014-03-03T23:59:59.000Z

37

Polymer electrolyte fuel cell electrodes grown by vapor deposition techniques Pascal Brault*  

E-Print Network [OSTI]

Polymer electrolyte fuel cell electrodes grown by vapor deposition techniques Pascal Brault Abstract: Polymer fuel cell electrode growth using vapor deposition techniques is reviewed. The supports process: sputtering, CVD, PECVD, MOCVD. In each case, up-to-date fuel cell performances are highlighted

Paris-Sud XI, Université de

38

Lithium phosphorous oxynitride films synthesized by a plasma-assisted directed vapor deposition approach  

E-Print Network [OSTI]

Lithium phosphorous oxynitride films synthesized by a plasma-assisted directed vapor deposition vapor deposition approach has been explored for the synthesis of lithium phosphorous oxynitride Lipon the ionic transport properties of these films. This enabled the synthesis of electrolyte films with lithium

Wadley, Haydn

39

Low temperature chemical vapor deposition of Co thin films from Co2(CO)8  

E-Print Network [OSTI]

Low temperature chemical vapor deposition of Co thin films from Co2(CO)8 D.-X. Yea,*, S. Pimanpanga chemical vapor deposition with a metallorganic Co2(CO)8 precursor. After Ar sputtering of the surface, Co2(CO)8, has been extensively used in cobalt CVD and is attractive, since Co is in its elemental

Wang, Gwo-Ching

40

Tunneling characteristics in chemical vapor deposited graphene hexagonal boron nitride graphene junctions  

E-Print Network [OSTI]

1 Tunneling characteristics in chemical vapor deposited graphene ­ hexagonal boron nitride ­ graphene junctions T. Roy1 , L. Liu2 , S. de la Barrera,3 B. Chakrabarti1,4 , Z. R. Hesabi1 , C. A. Joiner1 Abstract: Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate

Feenstra, Randall

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Computational Analysis and Optimization of a Chemical Vapor Deposition Reactor with  

E-Print Network [OSTI]

Computational Analysis and Optimization of a Chemical Vapor Deposition Reactor with Large and optimization of a three- dimensional model of a horizontal chemical vapor deposition (CVD) reactor used National Laboratories February 9, 2004 Abstract A computational analysis and optimization is presented

42

On the optimization of a dc arcjet diamond chemical vapor deposition reactor  

E-Print Network [OSTI]

On the optimization of a dc arcjet diamond chemical vapor deposition reactor S. W. Reevea) and W. A precursor in our dc arcjet reactor.1 Based on conclusions drawn from that work, an optimization strategy diamond film growth in a dc arcjet chemical vapor deposition reactor has been developed. Introducing

Dandy, David

43

Researchers develop electrodeposition process to deposit coatings on substrates, eliminate the expensive physical vapor  

E-Print Network [OSTI]

the expensive physical vapor deposition step, and improve device quality. CuIn1-xGaxSe2 (CIGS) solar cells have composition was adjusted by physical vapor deposition method. At present, we are fabricating CIGS-based solar). 2 R. N. Bhattacharya, W. Batchelor, J. F. Hiltner, and J. R. Sites, Appl. Phys. Lett., 75, 1431

44

Plasma and Ion Assistance in Physical Vapor Deposition: AHistorical Perspective  

SciTech Connect (OSTI)

Deposition of films using plasma or plasma-assist can betraced back surprisingly far, namely to the 18th century for arcs and tothe 19th century for sputtering. However, only since the 1960s thecoatings community considered other processes than evaporation for largescale commercial use. Ion Plating was perhaps the first importantprocess, introducing vapor ionization and substrate bias to generate abeam of ions arriving on the surface of the growing film. Ratherindependently, cathodic arc deposition was established as an energeticcondensation process, first in the former Soviet Union in the 1970s, andin the 1980s in the Western Hemisphere. About a dozen various ion-basedcoating technologies evolved in the last decades, all characterized byspecific plasma or ion generation processes. Gridded and gridless ionsources were taken from space propulsion and applied to thin filmdeposition. Modeling and simulation have helped to make plasma and ionseffects to be reasonably well understood. Yet--due to the complex, oftennon-linear and non-equilibrium nature of plasma and surfaceinteractions--there is still a place for the experience plasma"sourcerer."

Anders, Andre

2007-02-28T23:59:59.000Z

45

Growth of graphene underlayers by chemical vapor deposition  

SciTech Connect (OSTI)

We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu, E-mail: ncholu.manyala@up.ac.za [Department of Physics, Institute of Applied Materials, SARChI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa)] [Department of Physics, Institute of Applied Materials, SARChI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Charlie Johnson, A. T. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)] [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

2013-11-15T23:59:59.000Z

46

Understanding the Nanotube Growth Mechanism: A Strategy to Control Nanotube Chirality during Chemical Vapor Deposition Synthesis  

E-Print Network [OSTI]

during chemical vapor deposition synthesis must focus on controlling the structure of the nucleated nanotube seeds. DFT and RMD simulations demonstrate the viability of using the structures of catalyst particles over which nanotube growth proceeds...

Gomez Gualdron, Diego Armando 1983-

2012-10-26T23:59:59.000Z

47

CO-CATALYTIC ABSORPTION LAYERS FOR CONTROLLED LASER-INDUCED CHEMICAL VAPOR DEPOSITION OF CARBON NANOTUBES  

E-Print Network [OSTI]

The concept of co-catalytic layer structures for controlled laser-induced chemical vapor deposition of carbon nanotubes is established, in which a thin Ta support layer chemically aids the initial Fe catalyst reduction. This enables a significant...

Michaelis, F.B.; Weatherup, R.S.; Bayer, B.C.; Bock, M.C.D; Sugime, H.; Caneva, S.; Robertson, J.; Baumberg, J.J.; Hofmann, S.

2014-02-24T23:59:59.000Z

48

Iron (III) Chloride doping of large-area chemical vapor deposition graphene  

E-Print Network [OSTI]

Chemical doping is an effective method of reducing the sheet resistance of graphene. This thesis aims to develop an effective method of doping large area Chemical Vapor Deposition (CVD) graphene using Iron (III) Chloride ...

Song, Yi, S.M. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

49

Bilayer graphene growth by low pressure chemical vapor deposition on copper foil  

E-Print Network [OSTI]

Successfully integrating graphene in standard processes for applications in electronics relies on the synthesis of high-quality films. In this work we study Low Pressure Chemical Vapor Deposition (LPCVD) growth of bilayer ...

Fang, Wenjing, S.M. Massachusetts Institute of Technology

2012-01-01T23:59:59.000Z

50

Single- and few-layer graphene by ambient pressure chemical vapor deposition on nickel  

E-Print Network [OSTI]

An ambient pressure chemical vapor deposition (APCVD) process is used to fabricate graphene based films consisting of one to several graphene layers across their area. Polycrystalline Ni thin films are used and the graphene ...

Reina Ceeco, Alfonso

2010-01-01T23:59:59.000Z

51

Optimization of the chemical vapor deposition process for carbon nanotubes fabrication  

E-Print Network [OSTI]

Optimization of the chemical vapor deposition process for carbon nanotubes fabrication M. Grujicica-phase chemistry and surface chemistry model is developed to analyze, at the reactor length scale, chemical vapor (carrier gas) in the presence of cobalt catalytic particles in a cylindrical reactor. The model allows

Grujicic, Mica

52

Solar-induced chemical vapor deposition of diamond-type carbon films  

DOE Patents [OSTI]

An improved chemical vapor deposition method for depositing transparent continuous coatings of sp[sup 3]-bonded diamond-type carbon films, comprises: (a) providing a volatile hydrocarbon gas/H[sub 2] reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and (b) directing a concentrated solar flux of from about 40 to about 60 watts/cm[sup 2] through said reactant mixture to produce substrate temperatures of about 750 C to about 950 C to activate deposition of the film on said substrate. 11 figs.

Pitts, J.R.; Tracy, C.E.; King, D.E.; Stanley, J.T.

1994-09-13T23:59:59.000Z

53

Solar-induced chemical vapor deposition of diamond-type carbon films  

DOE Patents [OSTI]

An improved chemical vapor deposition method for depositing transparent continuous coatings of sp.sup.3 -bonded diamond-type carbon films, comprising: a) providing a volatile hydrocarbon gas/H.sub.2 reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and b) directing a concentrated solar flux of from about 40 to about 60 watts/cm.sup.2 through said reactant mixture to produce substrate temperatures of about 750.degree. C. to about 950.degree. C. to activate deposition of the film on said substrate.

Pitts, J. Roland (Lakewood, CO); Tracy, C. Edwin (Golden, CO); King, David E. (Lakewood, CO); Stanley, James T. (Beaverton, OR)

1994-01-01T23:59:59.000Z

54

Preparation of membranes using solvent-less vapor deposition followed by in-situ polymerization  

DOE Patents [OSTI]

A system of fabricating a composite membrane from a membrane substrate using solvent-less vapor deposition followed by in-situ polymerization. A first monomer and a second monomer are directed into a mixing chamber in a deposition chamber. The first monomer and the second monomer are mixed in the mixing chamber providing a mixed first monomer and second monomer. The mixed first monomer and second monomer are solvent-less vapor deposited onto the membrane substrate in the deposition chamber. The membrane substrate and the mixed first monomer and second monomer are heated to produce in-situ polymerization and provide the composite membrane.

O'Brien, Kevin C. (San Ramon, CA); Letts, Stephan A. (San Ramon, CA); Spadaccini, Christopher M. (Oakland, CA); Morse, Jeffrey C. (Pleasant Hill, CA); Buckley, Steven R. (Modesto, CA); Fischer, Larry E. (Los Gatos, CA); Wilson, Keith B. (San Ramon, CA)

2012-01-24T23:59:59.000Z

55

Fabrication of nanostructure by physical vapor deposition with glancing angle deposition technique and its applications  

SciTech Connect (OSTI)

A nanostructural thin film is one of the highly exploiting research areas particularly in applications in sensor, photocatalytic, and solar-cell technologies. In the past two decades, the integration of glancing-angle deposition (GLAD) technique to physical vapor deposition (PVD) process has gained significant attention for well-controlled multidimensional nanomorphologies because of fast, simple, cost-effective, and mass-production capability. The performance and functional properties of the coated thin films generally depend upon their nanostructural compositions, i.e., large aspect ratio, controllable porosity, and shape. Such structural platforms make the fabricated thin films very practical for several realistic applications. We therefore present morphological and nanostructural properties of various deposited materials, which included metals, i.e., silver (Ag), and oxide compounds, i.e., tungsten oxide (WO{sub 3}), titanium dioxide (TiO{sub 2}), and indium tin oxide (ITO). Different PVD techniques based on DC magnetron sputtering and electron-beam evaporation, both with the integrated GLAD component, were discussed. We further explore engineered nanostructures which enable controls of optical, electrical, and mechanical properties. These improvements led to several practical applications in surface-enhanced Raman, smart windows, gas sensors, self-cleaning materials and transparent conductive oxides (TCO)

Horprathum, M., E-mail: mati.horprathum@nectec.or.th; Eiamchai, P., E-mail: mati.horprathum@nectec.or.th; Patthanasettakul, V.; Limwichean, S.; Nuntawong, N.; Chindaudom, P. [Optical Thin-Film Laboratory National Electronics and Computer Technology Center, Pathumthani, 12120 (Thailand); Kaewkhao, J. [Center of Excellence in Glass Technology and Materials Science (CEGM), Nakhon Pathom Rajabhat University, Nakhon Pathom 73000 (Thailand); Chananonnawathorn, C. [Department of Physics, Faculty of Science and Technology, Thammasat University, Pathumthani, 12121 (Thailand)

2014-09-25T23:59:59.000Z

56

As-deposited low-strain LPCVD (low-pressure, chemical-vapor-deposition) polysilicon  

SciTech Connect (OSTI)

As-deposited polysilicon films with very low residual strain (lower than 5 x 10/sup -5/) are obtained by a low-pressure, chemical-vapor-deposition (LPCVD) process. Straight polysilicon bridges 300 ..mu..m long, 1.2 ..mu..m thick, and 2 to 20 ..mu..m wide, made using this process. No buckling has been observed in any of the nearly one thousand bridges of this type made in two separate process runs. In addition, no problems of sticking between the bridges and the substrate were encountered with these structures. The polysilicon films from which the beams were fabricated were deposited by pyrolyzing silane at 605/degree/C on a phosphosilicate-glass (PSG) layer (8 wt % P). The PSG layer serves as a sacrificial layer to be subsequently etched away to free the bridge. Our research is aimed at obtaining an understanding of these relationships through consideration of the role of interfacial stresses and the kinetics of initial crystalline nucleation. The technique for producing these low-strain films is significant, however, because no high-temperature annealing steps are required to produce them. 4 refs., 4 figs.

Fan, L.S.; Muller, R.S.

1988-08-01T23:59:59.000Z

57

Chemical vapor deposition of W-Si-N and W-B-N  

DOE Patents [OSTI]

A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.

Fleming, James G. (Albuquerque, NM); Roherty-Osmun, Elizabeth Lynn (Albuquerque, NM); Smith, Paul M. (Albuquerque, NM); Custer, Jonathan S. (Albuquerque, NM); Jones, Ronald V. (Albuquerque, NM); Nicolet, Marc-A. (Pasadena, CA); Madar, Roland (Eybens, FR); Bernard, Claude (Brie et Angonnes, FR)

1999-01-01T23:59:59.000Z

58

Chemical vapor deposition of W-Si-N and W-B-N  

DOE Patents [OSTI]

A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF[sub 6], either silicon or boron, and nitrogen. The result is a W-Si-N or W-B-N thin film useful for diffusion barrier and micromachining applications. 10 figs.

Fleming, J.G.; Roherty-Osmun, E.L.; Smith, P.M.; Custer, J.S.; Jones, R.V.; Nicolet, M.; Madar, R.; Bernard, C.

1999-06-29T23:59:59.000Z

59

Low temperature junction growth using hot-wire chemical vapor deposition  

DOE Patents [OSTI]

A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

2014-02-04T23:59:59.000Z

60

Development of a spatially controllable chemical vapor deposition reactor with combinatorial processing capabilities  

E-Print Network [OSTI]

Development of a spatially controllable chemical vapor deposition reactor with combinatorial these limitations, a novel CVD reactor system has been developed that can explicitly control the spatial profile flexibility, we introduced a new CVD reactor concept that enables control of film deposition characteristics

Rubloff, Gary W.

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Chemical Vapor Deposition of Silicon Dioxide by Direct-Current Corona Discharges in Dry Air  

E-Print Network [OSTI]

Chemical Vapor Deposition of Silicon Dioxide by Direct-Current Corona Discharges in Dry Air, Si4O4(CH3)8) widely used as additives in personal care products. In both photocopiers and air in indoor air, the gas-phase processes limit the rate of deposition. KEY WORDS: Corona plasma; corona

Chen, Junhong

62

Formation of amorphous metal alloys by chemical vapor deposition  

DOE Patents [OSTI]

Amorphous alloys are deposited by a process of thermal dissociation of mixtures or organometallic compounds and metalloid hydrides, e.g., transition metal carbonyl such as nickel carbonyl, and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit.

Mullendore, Arthur W. (Sandia Park, NM)

1990-01-01T23:59:59.000Z

63

Process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition  

DOE Patents [OSTI]

A chemical vapor deposition (CVD) process for preparing fiber-reinforced ceramic composites. A specially designed apparatus provides a steep thermal gradient across the thickness of a fibrous preform. A flow of gaseous ceramic matrix material is directed into the fibrous preform at the cold surface. The deposition of the matrix occurs progressively from the hot surface of the fibrous preform toward the cold surface. Such deposition prevents the surface of the fibrous preform from becoming plugged. As a result thereof, the flow of reactant matrix gases into the uninfiltrated (undeposited) portion of the fibrous preform occurs throughout the deposition process. The progressive and continuous deposition of ceramic matrix within the fibrous preform provides for a significant reduction in process time over known chemical vapor deposition processes.

Lackey, Jr., Walter J. (Oak Ridge, TN); Caputo, Anthony J. (Knoxville, TN)

1986-01-01T23:59:59.000Z

64

Improved process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition  

DOE Patents [OSTI]

A specially designed apparatus provides a steep thermal gradient across the thickness of fibrous preform. A flow of gaseous ceramic matrix material is directed into the fibrous preform at the cold surface. The deposition of the matrix occurs progressively from the hot surface of the fibrous preform toward the cold surface. Such deposition prevents the surface of the fibrous preform from becoming plugged. As a result thereof, the flow of reactant matrix gases into the uninfiltrated (undeposited) portion of the fibrous preform occurs throughout the deposition process. The progressive and continuous deposition of ceramic matrix within the fibrous preform provides for a significant reduction in process time over known chemical vapor deposition processes.

Lackey, W.J. Jr.; Caputo, A.J.

1984-09-07T23:59:59.000Z

65

Thermal Decomposition of Molecules Relevant to Combustion and Chemical Vapor Deposition by Flash Pyrolysis Time-of-Flight Mass Spectrometry  

E-Print Network [OSTI]

of Small Molecules by Flash Pyrolysis, University ofwas performed using flash pyrolysis vacuum-ultraviolet time-Vapor Deposition by Flash Pyrolysis Time-of-Flight Mass

Lemieux, Jessy Mario

2013-01-01T23:59:59.000Z

66

Research on fundamental aspects of inorganic vapor and particle deposition in coal-fired systems  

SciTech Connect (OSTI)

Parallel research studies are underway on the following interrelated and fundamental subjects; Geometrical Approach to Determining the Sticking Probability of Particles Impacting on Convex Solid Surfaces; Correlations for High Schmidt Number Particle Deposition From Dilute Flowing Rational Engineering Suspensions; Average Capture Probability of Arriving Particles Which Are Distributed With ResPect to ImPact VelocitY and Incidence Angle (Relative to Deposit Substrate); Experimental and Theoretical Studies of Vapor Infiltration of Non-isothermal Granular Deposits; Effective Area/Volume of Populations of 'MicroPorous' Aerosol Particles (Compact and 'Fractal' Quasispherical Aggregates); Effects of Radiative Heat Transfer on the Coagulation Rates of Combustion-Generated Particles; Structure-Sensitivity of Total Mass Deposition Rates from Combustion Product Streams containing Coagulation-Aged Populations of Aggregated Primary Particles; and Na[sub 2]SO[sub 4] Chemical Vapor Deposition From Chlorine-containing Coal-Derived Gases.

Rosner, D.E.

1992-06-01T23:59:59.000Z

67

Supplemental heating of deposition tooling shields  

DOE Patents [OSTI]

A method of reducing particle generation from the thin coating deposited on the internal surfaces of a deposition chamber which undergoes temperature variation greater than 100.degree. C. comprising maintaining the temperature variation of the internal surfaces low enough during the process cycle to keep thermal expansion stresses between the coating and the surfaces under 500 MPa. For titanium nitride deposited on stainless steel, this means keeping temperature variations under approximately 70.degree. C. in a chamber that may be heated to over 350.degree. C. during a typical processing operation. Preferably, a supplemental heater is mounted behind the upper shield and controlled by a temperature sensitive element which provides feedback control based on the temperature of the upper shield.

Ohlhausen, James A. (Albuquerque, NM); Peebles, Diane E. (Albuquerque, NM); Hunter, John A. (Albuquerque, NM); Eckelmeyer, Kenneth H. (Albuquerque, NM)

2000-01-01T23:59:59.000Z

68

SPATIALLY ORGANIZED PARYLENE NANOWIRES FABRICATED BY OBLIQUE ANGLE VAPOR DEPOSITION  

E-Print Network [OSTI]

surfaces by functionalization through two methods: (i) electroless method of creating a porous Nickel 50-80 nm thin nickel film can be obtained by electroless deposition on the pary

Demirel, Melik C.

69

The development of chemically vapor deposited mullite coatings for the corrosion protection of SiC  

SciTech Connect (OSTI)

Crystalline mullite coatings have been chemically vapor deposited onto SiC substrates to enhance the corrosion and oxidation resistance of the substrate. Current research has been divided into three distinct areas: (1) Development of the deposition processing conditions for increased control over coating`s growth rate, microstructure, and morphology; (2) Analysis of the coating`s crystal structure and stability; (3) The corrosion resistance of the CVD mullite coating on SiC.

Auger, M.; Hou, P.; Sengupta, A.; Basu, S.; Sarin, V. [Boston Univ., MA (United States)

1998-05-01T23:59:59.000Z

70

Diamond growth on WC-Co substrates by hot filament chemical vapor deposition: Effect of filamentsubstrate separation  

E-Print Network [OSTI]

Polycrystalline diamond films have been grown by hot filament (HF) chemical vapor deposition on WC-Co bar is an established technique for growing hard, wear- resistant polycrystalline diamond films on a range of substratesDiamond growth on WC-Co substrates by hot filament chemical vapor deposition: Effect of filament

Bristol, University of

71

Influence of gas composition on wafer temperature in a tungsten chemical vapor deposition reactor: Experimental measurements, model  

E-Print Network [OSTI]

Influence of gas composition on wafer temperature in a tungsten chemical vapor deposition reactor-wafer, lamp-heated chemical vapor deposition system were used to study the wafer temperature response to gas composition. A physically based simulation procedure for the process gas and wafer temperature was developed

Rubloff, Gary W.

72

Direct chemical vapor deposition of graphene on dielectric surfaces  

DOE Patents [OSTI]

A substrate is provided that has a metallic layer on a substrate surface of a substrate. A film made of a two dimensional (2-D) material, such as graphene, is deposited on a metallic surface of the metallic layer. The metallic layer is dewet and/or removed to provide the film on the substrate surface.

Zhang, Yuegang; Ismach, Ariel

2014-04-29T23:59:59.000Z

73

Z .Thin Solid Films 392 2001 231 235 Atmospheric pressure chemical vapor deposition of  

E-Print Network [OSTI]

of electrochromic tungsten oxide films Roy G. Gordona,U , Sean Barryb , Jeffrey T. Bartona , Randy N.R. Broomhall oxide, WO , is a coloring layer commonly used in electrochromic windows and displays. Successful: Chemical vapor deposition; Tungsten; Oxides; Electrochromism 1. Introduction Tungsten oxide is a key

74

Formation of Nickel Silicide from Direct-Liquid-Injection Chemical-Vapor-Deposited Nickel Nitride Films  

E-Print Network [OSTI]

. Published April 28, 2010. Metal silicides such as TiSi2 and CoSi2 have been commonly used as the contactsFormation of Nickel Silicide from Direct-Liquid-Injection Chemical-Vapor-Deposited Nickel Nitride as the intermediate for subsequent conversion into nickel silicide NiSi , which is a key material for source, drain

75

Vapor Deposition of Ruthenium from an Amidinate Precursor Huazhi Li,a  

E-Print Network [OSTI]

Vapor Deposition of Ruthenium from an Amidinate Precursor Huazhi Li,a Damon B. Farmer,b Roy G School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA October 11, 2007. Thin films of ruthenium have many current and potential appli- cations. They can be used

76

Vapor Deposition of Ruthenium from an Amidinate Precursor Huazhi Li,a  

E-Print Network [OSTI]

Vapor Deposition of Ruthenium from an Amidinate Precursor Huazhi Li,a Damon B. Farmer,b Roy G. Gordon* ,a Youbo Lin,b Joost Vlassakb a Department of Chemistry and Chemical Biology and b School and potential applications. They can be used as electrodes for capacitors, in which their high work function

77

Vapor phase deposition of oligo,,phenylene ethynylene... molecules for use in molecular electronic devices  

E-Print Network [OSTI]

, many groups have made headway fab- ricating molecular electronic test devices.1­18 These devices exceptions,22,23 the field of mo- lecular electronics is plagued by problems including a lack of deviceVapor phase deposition of oligo,,phenylene ethynylene... molecules for use in molecular electronic

Bean, John C.

78

Initiated chemical vapor deposition of fluoropolymer coatings for the surface modification of complex geometries  

E-Print Network [OSTI]

Initiated chemical vapor deposition (iCVD) is a one-step, soventless process that can be used to produce polymeric thin films. The iCVD technique has been used to polymerize a wide variety of vinyl monomers such as glycidyl ...

Gupta, Malancha, 1980-

2007-01-01T23:59:59.000Z

79

Chemical Vapor Deposition-Derived Graphene with Electrical Performance of Exfoliated Graphene  

E-Print Network [OSTI]

Chemical Vapor Deposition-Derived Graphene with Electrical Performance of Exfoliated Graphene a scalable method to produce large-area graphene, CVD-grown graphene has heretofore exhibited inferior of CVD-grown graphene in which two important sources of disorder, namely grain boundaries and processing

Hone, James

80

Field emission properties of phosphorus doped microwave plasma chemical vapor deposition diamond films by ion implantation  

E-Print Network [OSTI]

2002; published 5 February 2003 Phosphorus doped polycrystalline diamond films were grown using ion the electrical char- acteristics of diamond FEAs to lower the operating voltage. Polycrystalline diamond hasField emission properties of phosphorus doped microwave plasma chemical vapor deposition diamond

Lee, Jong Duk

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

An atomic-scale analysis of catalytically-assisted chemical vapor deposition of carbon nanotubes  

E-Print Network [OSTI]

An atomic-scale analysis of catalytically-assisted chemical vapor deposition of carbon nanotubes M Growth of carbon nanotubes during transition-metal particles catalytically-assisted thermal decomposition of various nanotube surface and edge reactions (e.g. adsorption of hydrocarbons and hydrogen onto the surface

Grujicic, Mica

82

High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma  

E-Print Network [OSTI]

High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency Semiconductor, Eden Prairie, MN, USA Received 10 July 2002; accepted 14 July 2002 Abstract Silicon carbide films; Nanomaterials; Silicon carbide; Thermal plasmas; Thin films; Si tetrachlorine precursor Silicon carbide has

Zachariah, Michael R.

83

Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films on sapphire  

E-Print Network [OSTI]

Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films Cedex 9, France (Dated: 15 March 2011) Uniform single layer graphene was grown on single-crystal Ir. These graphene layers have a single crystallographic orientation and a very low density of defects, as shown

Boyer, Edmond

84

Synthesis of high-quality monolayer and bilayer graphene on copper using chemical vapor deposition  

E-Print Network [OSTI]

exfoliation of graphite [1], sublimation of epitaxial SiC [4], and catalyst-assisted chemical vapor deposition (CVD) [5­9]. However, mechanical exfoliation of graphite can only supply small-size graphene (see Fig than that of graphene obtained via exfoli- ation of graphite as summarized in Fig. 1. While many

85

Compensator Control For Chemical Vapor Deposition Film Growth Using Reduced Order Design Models  

E-Print Network [OSTI]

in a high pressure chemical vapor deposition (HPCVD) reactor that in­ cludes multiple species and controls optoelectronic integrated circuits. This can sometimes be addressed, in part, through open­loop optimization [7 reactor with real­time sensing and control as an innovative feature of this proto­ type reactor. Previous

86

Ionized physical vapor deposition of integrated circuit interconnects* J. Hopwood,a)  

E-Print Network [OSTI]

Ionized physical vapor deposition of integrated circuit interconnects* J. Hopwood,a) Northeastern University, Boston, Massachusetts 02115 Received 19 November 1997; accepted 25 November 1997 Interconnects to the interconnection of semiconductor devices while the remaining 10 percent is due to transistor-related delay

87

Self-Limiting Chemical Vapor Deposition Growth of Monolayer Graphene from Ethanol  

E-Print Network [OSTI]

carbide,8 to chemical vapor deposition (CVD) of hydrocarbon precursors on transition metals,9-13 economic up to wafer scale,14,15 nickel and copper are the two most commonly used metal substrates. DueC) restricts the growth of graphene to the metal surface.12,17 The uniformity and high quality of the resultant

Maruyama, Shigeo

88

Cobalt Ultrathin Film Catalyzed Ethanol Chemical Vapor Deposition of Single-Walled Carbon Nanotubes  

E-Print Network [OSTI]

Cobalt Ultrathin Film Catalyzed Ethanol Chemical Vapor Deposition of Single-Walled Carbon Nanotubes (SWNTs) using a cobalt ultrathin film (1 nm) as the catalyst and ethanol as carbon feedstock flow during the growth. The trace amount of self-contained water (0.2-5 wt %) in ethanol may act

Hone, James

89

Conjugate heat transfer and particle transport in outside vapor deposition process  

SciTech Connect (OSTI)

A numerical study of conjugate heat transfer and particle transport has been carried out for the outside vapor deposition process. A buoyant jet flow impinging on a two-layered cylinder has been analyzed including heat conduction occurring through the two-layered cylinder, which consists of the original target rod and the deposited porous layers. Temperature and flow fields have been obtained by an iterative method, and thermophoretic particle deposition has been studied. Of particular interest are the effects of the thickness of deposited layers, the torch speed, the rotation speed of the cylinder, and the distance between the torch and the cylinder on the heat transfer and particle deposition. Effects of variable properties and tube rotation are also included.

Choi, M.; Song, Y.; Kang, S.H. [Seoul National Univ., Seoul (Korea, Republic of). Dept. of Mechanical Engineering

1995-07-01T23:59:59.000Z

90

Validating optical emission spectroscopy as a diagnostic of microwave activated CH4/Ar/H2 plasmas used for diamond chemical vapor deposition  

E-Print Network [OSTI]

chemical vapor deposition of polycrystalline diamond. Several tracer species are monitored in order to gain used for diamond chemical vapor deposition Jie Ma,1 Michael N. R. Ashfold,1,a and Yuri A. Mankelevich2 spectroscopic methods used to diagnose microwave MW plasmas used for diamond chemical vapor deposition CVD . Zhu

Bristol, University of

91

Chemical vapor deposited diamond-on-diamond powder composites (LDRD final report)  

SciTech Connect (OSTI)

Densifying non-mined diamond powder precursors with diamond produced by chemical vapor infiltration (CVI) is an attractive approach for forming thick diamond deposits that avoids many potential manufacturability problems associated with predominantly chemical vapor deposition (CVD) processes. The authors developed techniques for forming diamond powder precursors and densified these precursors in a hot filament-assisted reactor and a microwave plasma-assisted reactor. Densification conditions were varied following a fractional factorial statistical design. A number of conclusions can be drawn as a result of this study. High density diamond powder green bodies that contain a mixture of particle sizes solidify more readily than more porous diamond powder green bodies with narrow distributions of particle sizes. No composite was completely densified although all of the deposits were densified to some degree. The hot filament-assisted reactor deposited more material below the exterior surface, in the interior of the powder deposits; in contrast, the microwave-assisted reactor tended to deposit a CVD diamond skin over the top of the powder precursors which inhibited vapor phase diamond growth in the interior of the powder deposits. There were subtle variations in diamond quality as a function of the CVI process parameters. Diamond and glassy carbon tended to form at the exterior surface of the composites directly exposed to either the hot filament or the microwave plasma. However, in the interior, e.g. the powder/substrate interface, diamond plus diamond-like-carbon formed. All of the diamond composites produced were grey and relatively opaque because they contained flawed diamond, diamond-like-carbon and glassy carbon. A large amount of flawed and non-diamond material could be removed by post-CVI oxygen heat treatments. Heat treatments in oxygen changed the color of the composites to white.

Panitz, J.K.; Hsu, W.L.; Tallant, D.R.; McMaster, M.; Fox, C.; Staley, D.

1995-12-01T23:59:59.000Z

92

Aerosol chemical vapor deposition of metal oxide films  

DOE Patents [OSTI]

A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said substrate.

Ott, K.C.; Kodas, T.T.

1994-01-11T23:59:59.000Z

93

Pore evolution during high pressure atomic vapor deposition D. D. Hass Y. Y. Yang H. N. G. Wadley  

E-Print Network [OSTI]

The development of physical vapor deposition systems that employ inert gas jets to entrain and deposit atomic conditions can contain a higher volume fraction of porosity and a different pore morphology to coatings created by conventional, low pressure (\\10-4 Pa) deposition processes. A recent direct simulation Monte

Wadley, Haydn

94

Development of Nb{sub 3}Sn Cavity Vapor Diffusion Deposition System  

SciTech Connect (OSTI)

Nb{sub 3}Sn is a BCS superconductors with the superconducting critical temperature higher than that of niobium, so theoretically it surpasses the limitations of niobium in RF fields. The feasibility of technology has been demonstrated at 1.5 GHz with Nb{sub 3}Sn vapor deposition technique at Wuppertal University. The benefit at these frequencies is more pronounced at 4.2 K, where Nb{sub 3}Sn coated cavities show RF resistances an order of magnitude lower than that of niobium. At Jefferson Lab we started the development of Nb{sub 3}Sn vapor diffusion deposition system within an R\\&D development program towards compact light sources. Here we present the current progress of the system development.

Eremeev, Grigory V.; Macha, Kurt M.; Clemens, William A.; Park, HyeKyoung; Williams, R. Scott

2014-02-01T23:59:59.000Z

95

Continuous growth of single-wall carbon nanotubes using chemical vapor deposition  

DOE Patents [OSTI]

The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

Grigorian, Leonid; Hornyak, Louis; Dillon, Anne C; Heben, Michael J

2014-09-23T23:59:59.000Z

96

Continuous growth of single-wall carbon nanotubes using chemical vapor deposition  

DOE Patents [OSTI]

The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

Grigorian, Leonid (Raymond, OH); Hornyak, Louis (Evergreen, CO); Dillon, Anne C (Boulder, CO); Heben, Michael J (Denver, CO)

2008-10-07T23:59:59.000Z

97

Metal organic chemical vapor deposition of 111-v compounds on silicon  

DOE Patents [OSTI]

Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

Vernon, Stanley M. (Wellesley, MA)

1986-01-01T23:59:59.000Z

98

Plasma-enhanced chemical vapor deposition of graphene on copper substrates  

SciTech Connect (OSTI)

A plasma enhanced vapor deposition process is used to synthesize graphene from a hydrogen/methane gas mixture on copper samples. The graphene samples were transferred onto SiO{sub 2} substrates and characterized by Raman spectroscopic mapping and atomic force microscope topographical mapping. Analysis of the Raman bands shows that the deposited graphene is clearly SLG and that the sheets are deposited on large areas of several mm{sup 2}. The defect density in the graphene sheets is calculated using Raman measurements and the influence of the process pressure on the defect density is measured. Furthermore the origin of these defects is discussed with respect to the process parameters and hence the plasma environment.

Woehrl, Nicolas, E-mail: nicolas.woehrl@uni-due.de; Schulz, Stephan [Faculty of Chemistry and CENIDE, University Duisburg-Essen, Carl-Benz-Straße 199, 47057 Duisburg (Germany)] [Faculty of Chemistry and CENIDE, University Duisburg-Essen, Carl-Benz-Straße 199, 47057 Duisburg (Germany); Ochedowski, Oliver; Gottlieb, Steven [Faculty of Physics and CENIDE, University Duisburg Essen, Lotharstraße 1, 47057 Duisburg (Germany)] [Faculty of Physics and CENIDE, University Duisburg Essen, Lotharstraße 1, 47057 Duisburg (Germany); Shibasaki, Kosuke [Institute of Materials Science, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)] [Institute of Materials Science, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)

2014-04-15T23:59:59.000Z

99

Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films  

SciTech Connect (OSTI)

Thermal conductivity of freestanding 10?nm and 20?nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100?±?10?W m{sup ?1} K{sup ?1}, is lower than the bulk basal plane value (390?W m{sup ?1} K{sup ?1}) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.

Alam, M. T.; Haque, M. A., E-mail: mah37@psu.edu [Mechanical and Nuclear Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Bresnehan, M. S.; Robinson, J. A. [Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA and The Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)] [Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA and The Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-01-06T23:59:59.000Z

100

Tunable carbon nanotube-tungsten carbide nanoparticles heterostructures by vapor deposition  

SciTech Connect (OSTI)

A simple, versatile route for the synthesis of carbon nanotube (CNT)-tungsten carbide nanoparticles heterostructures was set up via vapor deposition process. For the first time, amorphous CNTs (?-CNTs) were used to immobilized tungsten carbide nanoparticles. By adjusting the synthesis and annealing temperature, ?-CNTs/amorphous tungsten carbide, ?-CNTs/W{sub 2}C, and CNTs/W{sub 2}C/WC heterostructures were prepared. This approach provides an efficient method to attach other metal carbides and other nanoparticles to carbon nanotubes with tunable properties.

Xia, Min; Guo, Hongyan; Ge, Changchun [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing (China); Institute of Powder Metallurgy and Advanced Ceramics, Southwest Jiaotong University, 111, 1st Section, Northern 2nd Ring Road, Chengdu (China); Yan, Qingzhi, E-mail: qzyan@ustb.edu.cn; Lang, Shaoting [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing (China)

2014-05-14T23:59:59.000Z

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

III-nitride quantum cascade detector grown by metal organic chemical vapor deposition  

SciTech Connect (OSTI)

Quantum cascade (QC) detectors in the GaN/Al{sub x}Ga{sub 1?x}N material system grown by metal organic chemical vapor deposition are designed, fabricated, and characterized. Only two material compositions, i.e., GaN as wells and Al{sub 0.5}Ga{sub 0.5}N as barriers are used in the active layers. The QC detectors operates around 4??m, with a peak responsivity of up to ?100??A/W and a detectivity of up to 10{sup 8} Jones at the background limited infrared performance temperature around 140?K.

Song, Yu, E-mail: yusong@princeton.edu; Huang, Tzu-Yung; Badami, Pranav; Gmachl, Claire [Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08540 (United States); Bhat, Rajaram; Zah, Chung-En [Corning Incorporated, Corning, New York 14831 (United States)

2014-11-03T23:59:59.000Z

102

Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions  

SciTech Connect (OSTI)

Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate graphene–hexagonal boron nitride–graphene symmetric field effect transistors. Gate control of the tunneling characteristics is observed similar to previously reported results for exfoliated graphene–hexagonal boron nitride–graphene devices. Density-of-states features are observed in the tunneling characteristics of the devices, although without large resonant peaks that would arise from lateral momentum conservation. The lack of distinct resonant behavior is attributed to disorder in the devices, and a possible source of the disorder is discussed.

Roy, T.; Hesabi, Z. R.; Joiner, C. A.; Vogel, E. M. [School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332 (United States); Liu, L.; Gu, G. [Department of Electrical Engineering and Computer Science, University of Tennessee, 1520 Middle Drive, Knoxville, Tennessee 37996 (United States); Barrera, S. de la; Feenstra, R. M. [Department of Physics, Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, Pennsylvania 15213 (United States); Chakrabarti, B. [School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Rd., Richardson, Texas 75080 (United States)

2014-03-24T23:59:59.000Z

103

Selective charge doping of chemical vapor deposition-grown graphene by interface modification  

SciTech Connect (OSTI)

The doping and scattering effect of substrate on the electronic properties of chemical vapor deposition (CVD)-grown graphene are revealed. Wet etching the underlying SiO{sub 2} of graphene and depositing self-assembled monolayers (SAMs) of organosilane between graphene and SiO{sub 2} are used to modify various substrates for CVD graphene transistors. Comparing with the bare SiO{sub 2} substrate, the carrier mobility of CVD graphene on modified substrate is enhanced by almost 5-fold; consistently the residual carrier concentration is reduced down to 10{sup 11}?cm{sup ?2}. Moreover, scalable and reliable p- and n-type graphene and graphene p-n junction are achieved on various silane SAMs with different functional groups.

Wang, Shengnan, E-mail: wang.shengnan@lab.ntt.co.jp; Suzuki, Satoru; Furukawa, Kazuaki; Orofeo, Carlo M.; Takamura, Makoto; Hibino, Hiroki [NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)] [NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)

2013-12-16T23:59:59.000Z

104

Low temperature atmospheric pressure chemical vapor deposition of group 14 oxide films  

SciTech Connect (OSTI)

Depositions of high quality SiO{sub 2} and SnO{sub 2} films from the reaction of homoleptic amido precursors M(NMe{sub 2})4 (M = Si,Sn) and oxygen were carried out in an atmospheric pressure chemical vapor deposition r. The films were deposited on silicon, glass and quartz substrates at temperatures of 250 to 450C. The silicon dioxide films are stoichiometric (O/Si = 2.0) with less than 0.2 atom % C and 0.3 atom % N and have hydrogen contents of 9 {plus_minus} 5 atom %. They are deposited with growth rates from 380 to 900 {angstrom}/min. The refractive indexes of the SiO{sub 2} films are 1.46, and infrared spectra show a possible Si-OH peak at 950 cm{sup {minus}1}. X-Ray diffraction studies reveal that the SiO{sub 2} film deposited at 350C is amorphous. The tin oxide films are stoichiometric (O/Sn = 2.0) and contain less than 0.8 atom % carbon, and 0.3 atom % N. No hydrogen was detected by elastic recoil spectroscopy. The band gap for the SnO{sub 2} films, as estimated from transmission spectra, is 3.9 eV. The resistivities of the tin oxide films are in the range 10{sup {minus}2} to 10{sup {minus}3} {Omega}cm and do not vary significantly with deposition temperature. The tin oxide film deposited at 350C is cassitterite with some (101) orientation.

Hoffman, D.M. [Houston Univ., TX (United States); Atagi, L.M. [Houston Univ., TX (United States)]|[Los Alamos National Lab., NM (United States); Chu, Wei-Kan; Liu, Jia-Rui; Zheng, Zongshuang [Houston Univ., TX (United States); Rubiano, R.R. [Massachusetts Inst. of Tech., Cambridge, MA (United States); Springer, R.W.; Smith, D.C. [Los Alamos National Lab., NM (United States)

1994-06-01T23:59:59.000Z

105

Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications  

SciTech Connect (OSTI)

With the LHC upgrades in 2013, and further LHC upgrades scheduled in 2018, most LHC experiments are planning for detector upgrades which require more radiation hard technologies than presently available. At present all LHC experiments now have some form of diamond detector. As a result Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of all LHC experiments. Moreover CVD diamond is now being discussed as an alternative sensor material for tracking very close to the interaction region of the HL-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications. Our accomplishments include: • Developed a two U.S.companies to produce electronic grade diamond, • Worked with companies and acquired large area diamond pieces, • Performed radiation hardness tests using various proton energies: 70 MeV (Cyric, Japan), 800 MeV (Los Alamos), and 24 GeV (CERN).

Kagan, Harris; Kass, Richard; Gan, K.K.

2014-01-23T23:59:59.000Z

106

Analysis of gallium arsenide deposition in a horizontal chemical vapor deposition reactor using massively parallel computations  

SciTech Connect (OSTI)

A numerical analysis of the deposition of gallium from trimethylgallium (TMG) and arsine in a horizontal CVD reactor with tilted susceptor and a three inch diameter rotating substrate is performed. The three-dimensional model includes complete coupling between fluid mechanics, heat transfer, and species transport, and is solved using an unstructured finite element discretization on a massively parallel computer. The effects of three operating parameters (the disk rotation rate, inlet TMG fraction, and inlet velocity) and two design parameters (the tilt angle of the reactor base and the reactor width) on the growth rate and uniformity are presented. The nonlinear dependence of the growth rate uniformity on the key operating parameters is discussed in detail. Efficient and robust algorithms for massively parallel reacting flow simulations, as incorporated into our analysis code MPSalsa, make detailed analysis of this complicated system feasible.

Salinger, A.G.; Shadid, J.N.; Hutchinson, S.A. [and others

1998-01-01T23:59:59.000Z

107

Research on fundamental aspects of inorganic vapor and particle deposition in coal-fired systems  

SciTech Connect (OSTI)

In September 1990 DOE-PETC initiated at the Yale HTCRE Laboratory a systematic three-year research program directed toward providing engineers with the fundamentally-based design/optimization 'tools' for economically predicting the dynamics of net deposit growth*, and thermophysical properties of the resulting microparticulate deposits in coal-fired systems. In light of the theoretical 'program' based on the notion of self-regulation'' set forth in Rosner and Nagarajan (1987), this Task includes investigation of the effects of particle material properties and possible liquid phases on the capture properties of particulate deposits. For this purpose we exploit dynamical 'many-body' computer simulation techniques. This approach will provide the required parametric dependencies (on such quantities as incident kinetic energy and angle, mechanical and thermophysical properties of the particles,[hor ellipsis]) of a dimensionless ensemble-averaged particle capture fraction, relegating the role of direct laboratory experiment to verifying (or rejecting) some crucial features/consequences of the simulation route followed. Our ultimate goal is recommend 'sticking' and 'erosion' laws of mechanistic origin. The availability of such laws could dramatically increase the reliability of predicted deposition rates of inertially delivered particles, in the simultaneous presence of a condensed liquid phase within the growing particulate, deposit. Equally important, one could also rationally select conditions to avoid. troublesome deposition subject to other operational requirements.

Rosner, D.E.

1992-09-01T23:59:59.000Z

108

Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor  

E-Print Network [OSTI]

The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films...

Nominanda, Helinda

2004-01-01T23:59:59.000Z

109

Carbon nanowalls grown by microwave plasma enhanced chemical vapor deposition during the carbonization of polyacrylonitrile fibers  

SciTech Connect (OSTI)

We used microwave plasma enhanced chemical vapor deposition (MPECVD) to carbonize an electrospun polyacrylonitrile (PAN) precursor to form carbon fibers. Scanning electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy were used to characterize the fibers at different evolution stages. It was found that MPECVD-carbonized PAN fibers do not exhibit any significant change in the fiber diameter, whilst conventionally carbonized PAN fibers show a 33% reduction in the fiber diameter. An additional coating of carbon nanowalls (CNWs) was formed on the surface of the carbonized PAN fibers during the MPECVD process without the assistance of any metallic catalysts. The result presented here may have a potential to develop a novel, economical, and straightforward approach towards the mass production of carbon fibrous materials containing CNWs.

Li Jiangling; Su Shi; Kundrat, Vojtech; Abbot, Andrew M.; Ye, Haitao [School of Engineering and Applied Science, Aston University, Birmingham B4 7ET (United Kingdom); Zhou Lei [Department of Metallurgy and Materials, University of Birmingham, Birmingham B15 2TT (United Kingdom); Mushtaq, Fajer [Department of Mechanical Engineering, ETH Zurich, Zurich 8092 (Switzerland); Ouyang Defang [School of Life and Health Science, Aston University, Birmingham B4 7ET (United Kingdom); James, David; Roberts, Darren [Thermo Fisher Scientific, Stafford House, Hemel Hempstead HP2 7GE (United Kingdom)

2013-01-14T23:59:59.000Z

110

Bifacial solar cell with SnS absorber by vapor transport deposition  

SciTech Connect (OSTI)

The SnS absorber layer in solar cell devices was produced by vapor transport deposition (VTD), which is a low-cost manufacturing method for solar modules. The performance of solar cells consisting of Si/Mo/SnS/ZnO/indium tin oxide (ITO) was limited by the SnS layer's surface texture and field-dependent carrier collection. For improved performance, a fluorine doped tin oxide (FTO) substrate was used in place of the Mo to smooth the topography of the VTD SnS and to make bifacial solar cells, which are potentially useful for multijunction applications. A bifacial SnS solar cell consisting of glass/FTO/SnS/CdS/ZnO/ITO demonstrated front- and back-side power conversion efficiencies of 1.2% and 0.2%, respectively.

Wangperawong, Artit [Stanford University, Stanford, California 94305 (United States); Department of Electrical Engineering, Faculty of Engineering, King Mongkut's University of Technology Thonburi, Bangkok 10140 (Thailand); Hsu, Po-Chun; Yee, Yesheng; Herron, Steven M.; Clemens, Bruce M.; Cui, Yi; Bent, Stacey F., E-mail: sbent@stanford.edu [Stanford University, Stanford, California 94305 (United States)

2014-10-27T23:59:59.000Z

111

Life cycle cost study for coated conductor manufacture by metal organic chemical vapor deposition  

SciTech Connect (OSTI)

The purpose of this report is to calculate the cost of producing high temperature superconducting wire by the Metal Organic Chemical Vapor Deposition (MOCVD) process. The technology status is reviewed from the literature and a plant conceptual design is assumed for the cost calculation. The critical issues discussed are the high cost of the metal organic precursors, the material utilization efficiency and the capability of the final product as measured by the critical current density achieved. Capital, operating and material costs are estimated and summed as the basis for calculating the cost per unit length of wire. Sensitivity analyses of key assumptions are examined to determine their effects on the final wire cost. Additionally, the cost of wire on the basis of cost per kiloampere per meter is calculated for operation at lower temperatures than the liquid nitrogen boiling temperature. It is concluded that this process should not be ruled out on the basis of high cost of precursors alone.

Chapman, J.N.

1999-07-13T23:59:59.000Z

112

A study of heat transfer and particle motion relative to the modified chemical vapor deposition process  

SciTech Connect (OSTI)

Heat transfer and particle motion relative to the modified chemical vapor deposition process have been studied for general values of the torch speed. Three-dimensional temperature fields have been obtained over the entire cross section of the tube and the effects of tube rotation and localized torch heating in the axial and circumferential directions have been studied. The particle trajectories have been calculated from a formulation that includes the contributions from forced flow, i.e., Poiseuille flow in the axial direction, rigid body rotation about the tube axis, and thermophoretic contributions in the axial, radial, and angular directions. The particle trajectories are helices and are shown to be strongly dependent on the tube rotation.

Choi, M.; Greif, R. (Univ. of California, Berkeley (United States)); Baum, H.R. (National Inst. of Standards and Technology, Gaithersburg, MD (United States))

1989-11-01T23:59:59.000Z

113

Carbon impurities on graphene synthesized by chemical vapor deposition on platinum  

SciTech Connect (OSTI)

We report nanocrystalline carbon impurities coexisting with graphene synthesized via chemical vapor deposition on platinum. For certain growth conditions, we observe micron-size island-like impurity layers which can be mistaken for second graphene layers in optical microscopy or scanning electron microscopy. The island orientation depends on the crystalline orientation of the Pt, as shown by electron backscatter diffraction, indicating growth of carbon at the platinum surface below graphene. Dark-field transmission electron microscopy indicates that in addition to uniform single-crystal graphene, our sample is decorated with nanocrystalline carbon impurities with a spatially inhomogeneous distribution. The impurity concentration can be reduced significantly by lowering the growth temperature. Raman spectra show a large D peak, however, electrical characterization shows high mobility (?8000?cm{sup 2}/Vs), indicating a limitation for Raman spectroscopy in characterizing the electronic quality of graphene.

Ping, Jinglei; Fuhrer, Michael S., E-mail: michael.fuhrer@monash.edu [Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742-4111, USA and School of Physics, Monash University, 3800 Victoria (Australia)

2014-07-28T23:59:59.000Z

114

Research on fundamental aspects of inorganic vapor and particle deposition in coal-fired systems  

SciTech Connect (OSTI)

In September 1990 DOE-PETC initiated at the Yale HTCRE Laboratory a systematic three-year research program directed toward providing engineers with the fundamentally-based design/optimization tools'' foreconomically predicting the dynamics of net deposit growth, and thermophysical properties of the resulting microparticulate deposits in coal-fired systems. The goal of our research in the area of mineral mattertransport is to advance the capability of making reliable engineering predictions of the dynamics of net deposit growth for surfaces exposed to the particle-laden products of coal combustion. To accomplish thisfor a wide variety of combustor types, coal types, and operating conditions, this capability must be based on a quantitative understanding of each of the important mechanisms of mineral matter transport, as well as the nature of the interactions between these substances and the prevailing fireside'' surface of deposits. This level of understanding and predictive capability could be translated into very significant cost reductions for coal-fired equipment design, development and operation. It is also expected that this research activity will not only directly benefit the ash deposition R D community -- but also generically closely related technologies of importance to DOE (e.g. hot-gas clean-up, particulate solids handling,...).

Rosner, D.E.

1992-03-01T23:59:59.000Z

115

Vapor deposition of platinum alloyed nickel aluminide coatings Z. Yu , K.P. Dharmasena, D.D. Hass, H.N.G. Wadley  

E-Print Network [OSTI]

Vapor deposition of platinum alloyed nickel aluminide coatings Z. Yu , K.P. Dharmasena, D.D. Hass at high temperature. It requires the chemical vapor deposition of aluminum on a nickel rich superalloy substrate that has been pre-coated with several microns of electrodeposited platinum. Here, we show

Wadley, Haydn

116

The aging of tungsten filaments and its effect on wire surface kinetics in hot-wire chemical vapor deposition  

E-Print Network [OSTI]

desorption kinetics. In particular, the Si signal exhibits a high temperature activation energy consistent vapor deposition growth have been measured by quadrupole mass spectrometry. New wires produce Si with previous measurements; the activation energy for the SiH3 signal suggests its formation is catalyzed. Aged

Atwater, Harry

117

Growth of crystalline X-Sic on Si at reduced temperatures by chemical vapor deposition from `silacycllobutane  

E-Print Network [OSTI]

, and TPS resulted in single crystal layer" on Si ( 111) only up to a thickness of 2000 h;. Highly orientedGrowth of crystalline X-Sic on Si at reduced temperatures by chemical vapor deposition from grown by SCB at a temperature of 800 "C. The progress of SiC/Si heterojunction devices has been C3HsSiH2

Steckl, Andrew J.

118

Gas jet assisted vapor deposition of yttria stabilized zirconia D. D. Hass and H. N. G. Wadleya  

E-Print Network [OSTI]

Gas jet assisted vapor deposition of yttria stabilized zirconia D. D. Hass and H. N. G. Wadleya February 2009 A gas jet assisted electron beam evaporation process for synthesizing yttria stabilized zirconia YSZ coatings has recently been reported. The process uses a rarefied inert gas jet to entrain

Wadley, Haydn

119

Preparation of amorphous electrochromic tungsten oxide and molybdenum oxide by plasma enhanced chemical vapor deposition  

SciTech Connect (OSTI)

Preliminary experiments have been performed to probe the feasibility of using plasma enhanced chemical vapor deposition (PE--CVD) to prepare electrochromic thin films of tungsten oxide and molybdenum oxide by plasma reaction of WF/sub 6/, W(CO)/sub 6/, and Mo(CO)/sub 6/ with oxygen. Thin films produced in a 300 W, electrodeless, radio-frequency (rf), capacitive discharge were found to be electrochromic when tested with either liquid or solid electrolytes. Optical spectroscopy was performed on two electrochromic coatings after Li/sup +/ ion insertion from a propylene carbonate liquid electrolyte. Broad absorption peaks at --900 nm for WO/sub 3/ and 600 nm for MoO/sub 3/ were observed. Optical results for PE--CVD MoO/sub 3/ films differ from those reported for evaporated MoO/sub 3/ films which have an absorption peak at --800 nm. The shorter wavelength absorption in the PE--CVD MoO/sub 3/ films offers the potential for fabricating electrochromic devices with higher contrast ratios and less color change. Optical emission spectroscopy, Auger, and x-ray diffraction analyses indicate these thin film deposits to be predominantly amorphous tungsten and molybdenum oxides.

Tracy, C.E.; Benson, D.K.

1986-09-01T23:59:59.000Z

120

Reactor design for uniform chemical vapor deposition-grown films without substrate rotation  

SciTech Connect (OSTI)

A reactor vessel is described for chemical vapor deposition of a uniform semiconductor film on a substrate, comprising: a generally cylindrical reaction chamber for receiving a substrate and a flow of reaction gas capable of depositing a film on the substrate under the conditions of the chamber, the chamber having upper and lower portion and being oriented about a vertical axis; a supporting means having a substrate support surface generally perpendicular to the vertical axis for carrying the substrate within the lower portion of the reaction chamber in a predetermined relative position with respect to the upper portion of the reaction chamber, the upper portion including a cylindrically shaped confinement chamber. The confinement chamber has a smaller diameter than the lower portion of the reaction chamber and is positioned above the substrate support surface; and a means for introducing a reaction gas into the confinement chamber in a nonaxial direction so as to direct the reaction gas into the lower portion of the reaction chamber with a non-axial flow having a rotational component with respect to the vertical axis. In this way the reaction gas defines an inward vortex flow pattern with respect to the substrate surface.

Wanlass, M.

1987-03-17T23:59:59.000Z

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition  

SciTech Connect (OSTI)

R-Fe-O (R?=?rare earth) compounds have recently attracted high interest as potential new multiferroic materials. Here, we report a method based on the solid-state reaction between Er{sub 2}O{sub 3} and Fe layers, respectively grown by atomic layer deposition and chemical vapor deposition, to synthesize Er-Fe-O thin films. The reaction is induced by thermal annealing and evolution of the formed phases is followed by in situ grazing incidence X-ray diffraction. Dominant ErFeO{sub 3} and ErFe{sub 2}O{sub 4} phases develop following subsequent thermal annealing processes at 850?°C in air and N{sub 2}. Structural, chemical, and morphological characterization of the layers are conducted through X-ray diffraction and reflectivity, time-of-flight secondary ion-mass spectrometry, and atomic force microscopy. Magnetic properties are evaluated by magnetic force microscopy, conversion electron Mössbauer spectroscopy, and vibrating sample magnetometer, being consistent with the presence of the phases identified by X-ray diffraction. Our results constitute a first step toward the use of cost-effective chemical methods for the synthesis of this class of multiferroic thin films.

Mantovan, R., E-mail: roberto.mantovan@mdm.imm.cnr.it; Vangelista, S.; Wiemer, C.; Lamperti, A.; Tallarida, G. [Laboratorio MDM IMM-CNR, I-20864 Agrate Brianza (MB) (Italy); Chikoidze, E.; Dumont, Y. [GEMaC, Université de Versailles St. Quentin en Yvelines-CNRS, Versailles (France); Fanciulli, M. [Laboratorio MDM IMM-CNR, I-20864 Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Milano (Italy)

2014-05-07T23:59:59.000Z

122

Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition  

SciTech Connect (OSTI)

Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of C-C, C-H, Si-C, and Si-H bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio I{sub D}/I{sub G}. Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

Santra, T. S.; Liu, C. H. [Institute of Nanoengineering and Microsystems (NEMS), National Tsing Hua University, Hsinchu, Taiwan 30043 (China); Bhattacharyya, T. K. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721302, West Bengal (India); Patel, P. [Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801 (United States); Barik, T. K. [School of Applied Sciences, Haldia Institute of Technology, Haldia 721657, Purba Medinipur, West Bengal (India)

2010-06-15T23:59:59.000Z

123

Optical coatings of variable refractive index and high laser-resistance from physical-vapor-deposited perfluorinated amorphous polymer  

DOE Patents [OSTI]

Variable index optical single-layers, optical multilayer, and laser-resistant coatings were made from a perfluorinated amorphous polymer material by physical vapor deposition. This was accomplished by physically vapor depositing a polymer material, such as bulk Teflon AF2400, for example, to form thin layers that have a very low refractive index (.about.1.10-1.31) and are highly transparent from the ultra-violet through the near infrared regime, and maintain the low refractive index of the bulk material. The refractive index can be varied by simply varying one process parameter, either the deposition rate or the substrate temperature. The thus forming coatings may be utilized in anti-reflectors and graded anti-reflection coatings, as well as in optical layers for laser-resistant coatings at optical wavelengths of less than about 2000 nm.

Chow, Robert (Livermore, CA); Loomis, Gary E. (Livermore, CA); Thomas, Ian M. (Livermore, CA)

1999-01-01T23:59:59.000Z

124

Optical coatings of variable refractive index and high laser-resistance from physical-vapor-deposited perfluorinated amorphous polymer  

DOE Patents [OSTI]

Variable index optical single-layers, optical multilayer, and laser-resistant coatings were made from a perfluorinated amorphous polymer material by physical vapor deposition. This was accomplished by physically vapor depositing a polymer material, such as bulk Teflon AF2400, for example, to form thin layers that have a very low refractive index (ca. 1.10--1.31) and are highly transparent from the ultra-violet through the near infrared regime, and maintain the low refractive index of the bulk material. The refractive index can be varied by simply varying one process parameter, either the deposition rate or the substrate temperature. The thus forming coatings may be utilized in anti-reflectors and graded anti-reflection coatings, as well as in optical layers for laser-resistant coatings at optical wavelengths of less than about 2000 nm. 2 figs.

Chow, R.; Loomis, G.E.; Thomas, I.M.

1999-03-16T23:59:59.000Z

125

Formation of Nickel Silicide from Direct-liquid-injection Chemical-vapor-deposited Nickel Nitride Films  

SciTech Connect (OSTI)

Smooth, continuous, and highly conformal nickel nitride (NiN{sub x}) films were deposited by direct liquid injection (DLI)-chemical vapor deposition (CVD) using a solution of bis(N,N{prime}-di-tert-butylacetamidinato)nickel(II) in tetrahydronaphthalene as the nickel (Ni) source and ammonia (NH{sub 3}) as the coreactant gas. The DLI-CVD NiNx films grown on HF-last (100) silicon and on highly doped polysilicon substrates served as the intermediate for subsequent conversion into nickel silicide (NiSi), which is a key material for source, drain, and gate contacts in microelectronic devices. Rapid thermal annealing in the forming gas of DLI-CVD NiNx films formed continuous NiSi films at temperatures above 400 C. The resistivity of the NiSi films was 15{mu}{Omega} cm, close to the value for bulk crystals. The NiSi films have remarkably smooth and sharp interfaces with underlying Si substrates, thereby producing contacts for transistors with a higher drive current and a lower junction leakage. Resistivity and synchrotron X-ray diffraction in real-time during annealing of NiNx films showed the formation of a NiSi film at about 440 C, which is morphologically stable up to about 650 C. These NiSi films could find applications in future nanoscale complementary metal oxide semiconductor devices or three-dimensional metal-oxide-semiconductor devices such as Fin-type field effect transistors for the 22 nm technology node and beyond.

Li, Z.; Gordon, R; Li, H; Shenai, D; Lavoie, C

2010-01-01T23:59:59.000Z

126

Massively parallel computation of 3D flow and reactions in chemical vapor deposition reactors  

SciTech Connect (OSTI)

Computer modeling of Chemical Vapor Deposition (CVD) reactors can greatly aid in the understanding, design, and optimization of these complex systems. Modeling is particularly attractive in these systems since the costs of experimentally evaluating many design alternatives can be prohibitively expensive, time consuming, and even dangerous, when working with toxic chemicals like Arsine (AsH{sub 3}): until now, predictive modeling has not been possible for most systems since the behavior is three-dimensional and governed by complex reaction mechanisms. In addition, CVD reactors often exhibit large thermal gradients, large changes in physical properties over regions of the domain, and significant thermal diffusion for gas mixtures with widely varying molecular weights. As a result, significant simplifications in the models have been made which erode the accuracy of the models` predictions. In this paper, the authors will demonstrate how the vast computational resources of massively parallel computers can be exploited to make possible the analysis of models that include coupled fluid flow and detailed chemistry in three-dimensional domains. For the most part, models have either simplified the reaction mechanisms and concentrated on the fluid flow, or have simplified the fluid flow and concentrated on rigorous reactions. An important CVD research thrust has been in detailed modeling of fluid flow and heat transfer in the reactor vessel, treating transport and reaction of chemical species either very simply or as a totally decoupled problem. Using the analogy between heat transfer and mass transfer, and the fact that deposition is often diffusion limited, much can be learned from these calculations; however, the effects of thermal diffusion, the change in physical properties with composition, and the incorporation of surface reaction mechanisms are not included in this model, nor can transitions to three-dimensional flows be detected.

Salinger, A.G.; Shadid, J.N.; Hutchinson, S.A.; Hennigan, G.L.; Devine, K.D.; Moffat, H.K.

1997-12-01T23:59:59.000Z

127

Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition  

SciTech Connect (OSTI)

We have grown graphene by chemical vapor deposition (CVD) and transferred it onto Si/SiO{sub 2} substrates to make tens of micron scale devices for Raman spectroscopy study. The effect of electron beam (e-beam) irradiation of various doses (600 to 12 000 {mu}C/cm{sup 2}) on CVD grown graphene has been examined by using Raman spectroscopy. It is found that the radiation exposures result in the appearance of the strong disorder D band attributed the damage to the lattice. The evolution of peak frequencies, intensities, and widths of the main Raman bands of CVD graphene is analyzed as a function of defect created by e-beam irradiation. Especially, the D and G peak evolution with increasing radiation dose follows the amorphization trajectory, which suggests transformation of graphene to the nanocrystalline and then to amorphous form. We have also estimated the strain induced by e-beam irradiation in CVD graphene. These results obtained for CVD graphene are in line with previous findings reported for the mechanically exfoliated graphene [D. Teweldebrhan and A. A. Balandin, Appl. Phys. Lett. 94, 013101 (2009)]. The results have important implications for CVD graphene characterization and device fabrication, which rely on the electron microscopy.

Iqbal, M. Z.; Kumar Singh, Arun; Iqbal, M. W.; Seo, Sunae; Eom, Jonghwa [Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of)

2012-04-15T23:59:59.000Z

128

High-temperature stress measurement on chemical-vapor-deposited tungsten silicide and tungsten films  

SciTech Connect (OSTI)

Stresses in chemical-vapor-deposited tungsten silicide and tungsten films at high temperatures were measured. Tungsten silicide films were formed from WF/sub 6/ and SiH/sub 4/ or Si/sub 2/H/sub 6/. Tungsten films were formed from WF/sub 6/ and H/sub 2/. The stress in tungsten silicide films is tensile and in the order of 10/sup 9/--10/sup 10/ dynes/cm/sup 2/. For a composition ratio of Si/Wless than or equal to2.6, the stress of a film of more than 1000 A has a maximum at about 500 /sup 0/C. On the other hand, for a composition Si/W>2.9, the stress has no maximum. The maximum of the stress is caused by crystallization of the film. The stress has two components. One component is related to the difference of the thermal expansion coefficients between the film and the Si substrate. Another is related to the film crystallization. It was found that the stress concentrates in the portion of the film nearest the substrate. The stress in tungsten films also reaches a maximum at 550 /sup 0/C, similar to the tungsten silicide films. However, the cause of this behavior is not clear.

Shioya, Y.; Ikegami, K.; Maeda, M.; Yanagida, K.

1987-01-15T23:59:59.000Z

129

Cooperative Island Growth of Large Area Single-Crystal Graphene by Chemical Vapor Deposition on Cu  

SciTech Connect (OSTI)

We describe a two-step approach for suppressing nucleation of graphene on Cu using chemical vapor deposition. In the first step, as received Cu foils are oxidized in air at temperatures up to 500 C to remove surface impurities and to induce the regrowth of Cu grains during subsequent annealing in H2 flow at 1040 C prior to graphene growth. In the second step, transient reactant cooling is performed by using a brief Ar pulse at the onset of growth to induce collisional deactivation of the carbon growth species. The combination of these two steps results in a three orders of magnitude reduction in the graphene nucleation density, enabling the growth of millimeter-size single crystal graphene grains. A kinetic model shows that suppressing nucleation promotes a cooperative island growth mode that favors the formation of large area single crystal graphene, and it is accompanied by a roughly 3 orders of magnitude increase in the reactive sticking probability of methane compared to that in random nucleation growth.

Regmi, Murari [Oak Ridge National Laboratory (ORNL); Rouleau, Christopher [Oak Ridge National Laboratory (ORNL); Puretzky, Alexander A [ORNL; Ivanov, Ilia N [ORNL; Geohegan, David B [ORNL; Chen, Jihua [ORNL; Eastman, Jeffrey [Argonne National Laboratory (ANL); Eres, Gyula [ORNL

2014-01-01T23:59:59.000Z

130

Nitrogen doping of chemical vapor deposition grown graphene on 4H-SiC (0001)  

SciTech Connect (OSTI)

We present optical, electrical, and structural properties of nitrogen-doped graphene grown on the Si face of 4H-SiC (0001) by chemical vapor deposition method using propane as the carbon precursor and N{sub 2} as the nitrogen source. The incorporation of nitrogen in the carbon lattice was confirmed by X-ray photoelectron spectroscopy. Angle-resolved photoemission spectroscopy shows carrier behavior characteristic for massless Dirac fermions and confirms the presence of a graphene monolayer in the investigated nitrogen-doped samples. The structural and electronic properties of the material were investigated by Raman spectroscopy. A systematical analysis of the graphene Raman spectra, including D, G, and 2D bands, was performed. In the case of nitrogen-doped samples, an electron concentration on the order of 5–10 × 10{sup 12}?cm{sup ?2} was estimated based upon Raman and Hall effect measurements and no clear dependence of the carrier concentration on nitrogen concentration used during growth was observed. This high electron concentration can be interpreted as both due to the presence of nitrogen in graphitic-like positions of the graphene lattice as well as to the interaction with the substrate. A greater intensity of the Raman D band and increased inhomogeneity, as well as decreased electron mobility, observed for nitrogen-doped samples, indicate the formation of defects and a modification of the growth process induced by nitrogen doping.

Urban, J. M.; Binder, J.; Wysmo?ek, A. [Faculty of Physics, University of Warsaw, ul. Ho?a 69, 00-681 Warsaw (Poland); D?browski, P.; Strupi?ski, W. [Institute of Electronic Materials Technology, ul. Wólczy?ska 133, 01-919 Warsaw (Poland); Kopciuszy?ski, M.; Ja?ochowski, M. [Institute of Physics, Maria Curie-Sk?odowska University, pl. M. Curie-Sk?odowskiej 1, 20-031 Lublin (Poland); Klusek, Z. [Faculty of Physics and Applied Informatics, University of ?ód?, ul. Pomorska 149/153, 90-236 ?ód? (Poland); Baranowski, J. M. [Faculty of Physics, University of Warsaw, ul. Ho?a 69, 00-681 Warsaw (Poland); Institute of Electronic Materials Technology, ul. Wólczy?ska 133, 01-919 Warsaw (Poland)

2014-06-21T23:59:59.000Z

131

On-line coating of glass with tin oxide by atmospheric pressure chemical vapor deposition.  

SciTech Connect (OSTI)

Atmospheric pressure chemical vapor deposition (APCVD) of tin oxide is a very important manufacturing technique used in the production of low-emissivity glass. It is also the primary method used to provide wear-resistant coatings on glass containers. The complexity of these systems, which involve chemical reactions in both the gas phase and on the deposition surface, as well as complex fluid dynamics, makes process optimization and design of new coating reactors a very difficult task. In 2001 the U.S. Dept. of Energy Industrial Technologies Program Glass Industry of the Future Team funded a project to address the need for more accurate data concerning the tin oxide APCVD process. This report presents a case study of on-line APCVD using organometallic precursors, which are the primary reactants used in industrial coating processes. Research staff at Sandia National Laboratories in Livermore, CA, and the PPG Industries Glass Technology Center in Pittsburgh, PA collaborated to produce this work. In this report, we describe a detailed investigation of the factors controlling the growth of tin oxide films. The report begins with a discussion of the basic elements of the deposition chemistry, including gas-phase thermochemistry of tin species and mechanisms of chemical reactions involved in the decomposition of tin precursors. These results provide the basis for experimental investigations in which tin oxide growth rates were measured as a function of all major process variables. The experiments focused on growth from monobutyltintrichloride (MBTC) since this is one of the two primary precursors used industrially. There are almost no reliable growth-rate data available for this precursor. Robust models describing the growth rate as a function of these variables are derived from modeling of these data. Finally, the results are used to conduct computational fluid dynamic simulations of both pilot- and full-scale coating reactors. As a result, general conclusions are reached concerning the factors affecting the growth rate in on-line APCVD reactors. In addition, a substantial body of data was generated that can be used to model many different industrial tin oxide coating processes. These data include the most extensive compilation of thermochemistry for gas-phase tin-containing species as well as kinetic expressions describing tin oxide growth rates over a wide range of temperatures, pressures, and reactant concentrations.

Allendorf, Mark D.; Sopko, J.F. (PPF Industries, Pittsburgh, PA); Houf, William G.; Chae, Yong Kee; McDaniel, Anthony H.; Li, M. (PPF Industries, Pittsburgh, PA); McCamy, J.W. (PPF Industries, Pittsburgh, PA)

2006-11-01T23:59:59.000Z

132

Design of a compact ultrahigh vacuum-compatible setup for the analysis of chemical vapor deposition processes  

SciTech Connect (OSTI)

Optimizing thin film deposition techniques requires contamination-free transfer from the reactor into an ultrahigh vacuum (UHV) chamber for surface science analysis. A very compact, multifunctional Chemical Vapor Deposition (CVD) reactor for direct attachment to any typical UHV system for thin film analysis was designed and built. Besides compactness, fast, easy, and at the same time ultimately clean sample transfer between reactor and UHV was a major goal. It was achieved by a combination of sample manipulation parts, sample heater, and a shutter mechanism designed to fit all into a NW38 Conflat six-ways cross. The present reactor design is versatile to be employed for all commonly employed variants of CVD, including Atomic Layer Deposition. A demonstration of the functionality of the system is provided. First results of the setup (attached to an Omicron Multiprobe x-ray photoelectron spectroscopy system) on the temperature dependence of Pulsed Spray Evaporation-CVD of Ni films from Ni acetylacetonate as the precursor demonstrate the reactor performance and illustrate the importance of clean sample transfer without breaking vacuum in order to obtain unambiguous results on the quality of CVD-grown thin Ni films. The widely applicable design holds promise for future systematic studies of the fundamental processes during chemical vapor deposition or atomic layer deposition.

Weiss, Theodor; Nowak, Martin; Zielasek, Volkmar, E-mail: zielasek@uni-bremen.de; Bäumer, Marcus [Institut für Angewandte und Physikalische Chemie, Universität Bremen, Leobener Straße UFT, D-28359 Bremen (Germany); Mundloch, Udo; Kohse-Höinghaus, Katharina [Physikalische Chemie I, Fakultät für Chemie, Universität Bielefeld, Universitätsstraße 25, D-33615 Bielefeld (Germany)

2014-10-15T23:59:59.000Z

133

E-Print Network 3.0 - atomic vapor deposited Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

S. S. - School of Nuclear Engineering, Purdue University Collection: Plasma Physics and Fusion 8 Influence of substrate temperature on the stability of glasses prepared by vapor...

134

Towards improved spinnability of chemical vapor deposition generated multi-walled carbon nanotubes  

E-Print Network [OSTI]

P. J. F. 1999 Carbon nanotubes and related structures: newof vapor grown carbon nanotubes and single wall nanotubes, Eto Carbon Materials in Carbon Nanotubes: Preparation and

McKee, Gregg Sturdivant Burke

2008-01-01T23:59:59.000Z

135

Characteristics of ultra low-k nanoporous and fluorinated silica based films prepared by plasma enhanced chemical vapor deposition  

SciTech Connect (OSTI)

Low dielectric constant (low-k) silica based films were deposited on p-type silicon and polycarbonate substrates by radio frequency (RF) plasma enhanced chemical vapor deposition method at low temperature. A mixture of tetraethoxysilane vapor, oxygen, and tetrafluoromethane (CF{sub 4}) was used for the deposition of the films in forms of two structures called as SiO{sub x}C{sub y} and SiO{sub x}C{sub y}F{sub z}. Properties of the films were controlled by amount of porosity and fluorine content in the film matrix. The influence of RF power and CF{sub 4} flow on the elemental composition, deposition rate, surface roughness, leakage current, refractive index, and dielectric constant of the films were characterized. Moreover, optical emission spectroscopy was applied to monitor the plasma process at the different parameters. Electrical characteristics of SiO{sub x}C{sub y} and SiO{sub x}C{sub y}F{sub z} films with metal-oxide-semiconductor structure were investigated using current-voltage analysis to measure the leakage current and breakdown field, as well as capacitance-voltage analysis to obtain the film's dielectric constant. The results revealed that SiO{sub x}C{sub y} films, which are deposited at lower RF power produce more leakage current, meanwhile the dielectric constant and refractive index of these films decreased mainly due to the more porosity in the film structure. By adding CF{sub 4} in the deposition process, fluorine, the most electronegative and the least polarized atom, doped into the silica film and led to decrease in the refractive index and the dielectric constant. In addition, no breakdown field was observed in the electrical characteristics of SiO{sub x}C{sub y}F{sub z} films and the leakage current of these films reduced by increment of the CF{sub 4} flow.

Abbasi-Firouzjah, M. [Laser and Plasma Research Institute, Shahid Beheshti University G.C., Evin, Tehran 1983963113 (Iran, Islamic Republic of)] [Laser and Plasma Research Institute, Shahid Beheshti University G.C., Evin, Tehran 1983963113 (Iran, Islamic Republic of); Shokri, B. [Laser and Plasma Research Institute, Shahid Beheshti University G.C., Evin, Tehran 1983963113 (Iran, Islamic Republic of) [Laser and Plasma Research Institute, Shahid Beheshti University G.C., Evin, Tehran 1983963113 (Iran, Islamic Republic of); Physics Department, Shahid Beheshti University G.C., Evin, Tehran (Iran, Islamic Republic of)

2013-12-07T23:59:59.000Z

136

The influence of convective heat transfer on flow stability in rotating disk chemical vapor deposition reactors  

SciTech Connect (OSTI)

Flow and heat transfer of NH{sub 3} and He were studied in a rotating disk system with applications to chemical vapor deposition reactors. Flow field and disk heat flux were obtained over a range of operating conditions. Comparisons of disk convective heat transfer were made to infinite rotating disk results to appraise uniformity of transport to the disk. Important operating variables include disk spin rate, disk and enclosure temperatures, flow rate, composition, pressure, and gas mixture temperature at the reactor inlet. These variables were studied over ranges of the spin Reynolds number, Re{omega}; disk mixed convection parameter, MCP{sub w}; and wall mixed convection parameter, MCP{sub w}. Results obtained for NH{sub 3} show that increasing Re{omega} from 314.5 to 3145 increases the uniformity of rotating disk heat flux and results in thinner thermal boundary layers at the disk surface. At Re{omega}=314.5, increasing MCP{sub d} to 15 leads to significant departure from the infinite disk result with nonuniform disk heat fluxes and recirculating flow patterns; flow becomes increasingly complex at larger values of MCP{sub d}. At Re{omega} of 3145, results are closer to the infinite disk for MCP{sub d} up to 15. For large negative (hot walls) and positive (cold walls) values of MCP{sub w}, flow recirculates and there is significant deviation from the infinite disk result; nonuniformities occur at both values of Re{omega}. The influence of MCP{sub w} on flow stability is increased at larger MCP{sub d} and lower Re{omega}. To determine the influence of viscosity and thermal conductivity variation with temperature, calculations were made with He and NH{sub 3}; He transport property variation is low relative to NH{sub 3}. Results show that the flow of NH{sub 3} is less stable than that of He as MCP{sub d} is increased for MCP{sub w}=0 and Re{omega}=314.5. 16 refs., 15 figs., 1 tab.

Winters, W.S.; Evans, G.H. [Sandia National Labs., Livermore, CA (United States); Grief, R. [Univ. of California, Berkeley, CA (United States). Mechanical Engineering Dept.

1997-06-01T23:59:59.000Z

137

Method and apparatus for removing and preventing window deposition during photochemical vapor deposition (photo-CVD) processes  

DOE Patents [OSTI]

Unwanted build-up of the film deposited on the transparent light-transmitting window of a photochemical vacuum deposition (photo-CVD) chamber is eliminated by flowing an etchant into the part of the photolysis region in the chamber immediately adjacent the window and remote from the substrate and from the process gas inlet. The respective flows of the etchant and the process gas are balanced to confine the etchant reaction to the part of the photolysis region proximate to the window and remote from the substrate. The etchant is preferably one that etches film deposit on the window, does not etch or affect the window itself, and does not produce reaction by-products that are deleterious to either the desired film deposited on the substrate or to the photolysis reaction adjacent the substrate. 3 figs.

Tsuo, S.; Langford, A.A.

1989-03-28T23:59:59.000Z

138

Method and apparatus for removing and preventing window deposition during photochemical vapor deposition (photo-CVD) processes  

DOE Patents [OSTI]

Unwanted build-up of the film deposited on the transparent light-transmitting window of a photochemical vacuum deposition (photo-CVD) chamber is eliminated by flowing an etchant into the part of the photolysis region in the chamber immediately adjacent the window and remote from the substrate and from the process gas inlet. The respective flows of the etchant and the process gas are balanced to confine the etchant reaction to the part of the photolysis region proximate to the window and remote from the substrate. The etchant is preferably one that etches film deposit on the window, does not etch or affect the window itself, and does not produce reaction by-products that are deleterious to either the desired film deposited on the substrate or to the photolysis reaction adjacent the substrate.

Tsuo, Simon (Lakewood, CO); Langford, Alison A. (Boulder, CO)

1989-01-01T23:59:59.000Z

139

GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition  

SciTech Connect (OSTI)

Ordered and dense GaN light emitting nanorods are studied with polycrystalline graphene grown by rapid chemical vapor deposition as suspended transparent electrodes. As the substitute of indium tin oxide, the graphene avoids complex processing to fill up the gaps between nanorods and subsequent surface flattening and offers high conductivity to improve the carrier injection. The as-fabricated devices have 32% improvement in light output power compared to conventional planar GaN-graphene diodes. The suspended graphene remains electrically stable up to 300?°C in air. The graphene can be obtained at low cost and high efficiency, indicating its high potential in future applications.

Xu, Kun; Xu, Chen, E-mail: xuchen58@bjut.edu.cn; Deng, Jun; Zhu, Yanxu; Guo, Weiling; Mao, Mingming; Xun, Meng; Chen, Maoxing; Zheng, Lei [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China)] [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China); Xie, Yiyang [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 (China)] [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 (China); Sun, Jie, E-mail: jie.sun@chalmers.se [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China) [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China); Mikroteknologi och Nanovetenskap, Chalmers Tekniska Högskola AB, Göteborg 41296 (Sweden)

2013-11-25T23:59:59.000Z

140

Photoresponse properties of large-area MoS{sub 2} atomic layer synthesized by vapor phase deposition  

SciTech Connect (OSTI)

Photoresponse properties of a large area MoS{sub 2} atomic layer synthesized by vapor phase deposition method without any catalyst are studied. Scanning electron microscopy, atomic force microscopy, Raman spectrum, and photoluminescence spectrum characterizations confirm that the two-dimensional microstructures of MoS{sub 2} atomic layer are of high quality. Photoelectrical results indicate that the as-prepared MoS{sub 2} devices have an excellent sensitivity and a good reproducibility as a photodetector, which is proposed to be ascribed to the potential-assisted charge separation mechanism.

Luo, Siwei; Qi, Xiang, E-mail: xqi@xtu.edu.cn, E-mail: jxzhong@xtu.edu.cn; Ren, Long; Hao, Guolin; Fan, Yinping; Liu, Yundan; Han, Weijia; Zang, Chen; Li, Jun; Zhong, Jianxin, E-mail: xqi@xtu.edu.cn, E-mail: jxzhong@xtu.edu.cn [Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, People's Republic of China Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and Faculty of Materials and Optoelectronic Physics, Xiangtan University, Hunan 411105 (China)

2014-10-28T23:59:59.000Z

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Improving chemical vapor deposition graphene conductivity using molybdenum trioxide: An in-situ field effect transistor study  

SciTech Connect (OSTI)

By using in situ field effect transistor characterization integrated with molecular beam epitaxy technique, we demonstrate the strong surface transfer p-type doping effect of single layer chemical vapor deposition (CVD) graphene, through the surface functionalization of molybdenum trioxide (MoO{sub 3}) layer. After doping, both the hole and electron mobility of CVD graphene are nearly retained, resulting in significant enhancement of graphene conductivity. With coating of 10 nm MoO{sub 3}, the conductivity of CVD graphene can be increased by about 7 times, showing promising application for graphene based electronics and transparent, conducting, and flexible electrodes.

Han, Cheng [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China) [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China); Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Lin, Jiadan; Xiang, Du [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)] [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Wang, Chaocheng; Wang, Li [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China)] [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China); Chen, Wei [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore) [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 and Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)

2013-12-23T23:59:59.000Z

142

Development of nanodiamond foils for H- stripping to Support the Spallation Neutron Source (SNS) using hot filament chemical vapor deposition  

SciTech Connect (OSTI)

Thin diamond foils are needed in many particle accelerator experiments regarding nuclear and atomic physics, as well as in some interdisciplinary research. Particularly, nanodiamond texture is attractive for this purpose as it possesses a unique combination of diamond properties such as high thermal conductivity, mechanical strength and high radiation hardness; therefore, it is a potential material for energetic ion beam stripper foils. At the ORNL Spallation Neutron Source (SNS), the installed set of foils must be able to survive a nominal five-month operation period, without the need for unscheduled costly shutdowns and repairs. Thus, a small foil about the size of a postage stamp is critical to the operation of SNS and similar sources in U.S. laboratories and around the world. We are investigating nanocrystalline, polycrystalline and their admixture films fabricated using a hot filament chemical vapor deposition (HFCVD) system for H- stripping to support the SNS at Oak Ridge National Laboratory. Here we discuss optimization of process variables such as substrate temperature, process gas ratio of H2/Ar/CH4, substrate to filament distance, filament temperature, carburization conditions, and filament geometry to achieve high purity diamond foils on patterned silicon substrates with manageable intrinsic and thermal stresses so that they can be released as free standing foils without curling. An in situ laser reflectance interferometry tool (LRI) is used for monitoring the growth characteristics of the diamond thin film materials. The optimization process has yielded free standing foils with no pinholes. The sp3/sp2 bonds are controlled to optimize electrical resistivity to reduce the possibility of surface charging of the foils. The integrated LRI and HFCVD process provides real time information on the growth of films and can quickly illustrate growth features and control film thickness. The results are discussed in the light of development of nanodiamond foils that will be able to withstand a few MW proton beam and hopefully will be able to be used after possible future upgrades to the SNS to greater than a 3MW beam.

Vispute, R D [Blue Wave Semiconductors; Ermer, Henry K [Blue Wave Semiconductors; Sinsky, Phillip [Blue Wave Semiconductors; Seiser, Andrew [Blue Wave Semiconductors; Shaw, Robert W [ORNL; Wilson, Leslie L [ORNL

2014-01-01T23:59:59.000Z

143

Graphene chemical vapor deposition at very low pressure: The impact of substrate surface self-diffusion in domain shape  

SciTech Connect (OSTI)

The initial stages of graphene chemical vapor deposition at very low pressures (<10{sup ?5?}Torr) were investigated. The growth of large graphene domains (?up to 100??m) at very high rates (up to 3??m{sup 2} s{sup ?1}) has been achieved in a cold-wall reactor using a liquid carbon precursor. For high temperature growth (>900?°C), graphene grain shape and symmetry were found to depend on the underlying symmetry of the Cu crystal, whereas for lower temperatures (<900?°C), mostly rounded grains are observed. The temperature dependence of graphene nucleation density was determined, displaying two thermally activated regimes, with activation energy values of 6?±?1?eV for temperatures ranging from 900?°C to 960?°C and 9?±?1?eV for temperatures above 960?°C. The comparison of such dependence with the temperature dependence of Cu surface self-diffusion suggests that graphene growth at high temperatures and low pressures is strongly influenced by copper surface rearrangement. We propose a model that incorporates Cu surface self-diffusion as an essential process to explain the orientation correlation between graphene and Cu crystals, and which can clarify the difference generally observed between graphene domain shapes in atmospheric-pressure and low-pressure chemical vapor deposition.

Cunha, T. H. R.; Ek-Weis, J.; Lacerda, R. G.; Ferlauto, A. S., E-mail: ferlauto@fisica.ufmg.br [Department of Physics, Federal University of Minas Gerais, Belo Horizonte 31270-901 (Brazil)

2014-08-18T23:59:59.000Z

144

Simulation of chemical vapor infiltration and deposition based on 3D images: a local scale approach  

E-Print Network [OSTI]

infiltration of ceramic matrix composites is presented. This computational model requires a 3D representation/reaction problems; Random walks; 3D image-based modeling 1. Introduction Ceramic Matrix Composites and Carbon with a matrix. One of the most efficient ones is Chemical Vapor Infiltration (CVI), by which gaseous precursors

Boyer, Edmond

145

Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor deposition  

E-Print Network [OSTI]

Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor) In this letter we demonstrate the use of oxygen as a dopant in silicon to create semi-insulating, crystalline of the films exhibit classical characteristics of space-charge-limited current associated with insulators

146

Distributed Porosity as a Control Parameter for Oxide Thermal Barriers Made by Physical Vapor Deposition  

E-Print Network [OSTI]

Anthony G. Evans* Materials Institute, Princeton University, Princeton, New Jersey 08544 Thermal barrier and generating new thermal resistance solutions, as appropri- ate. A continuum heat flow analysis is usedDistributed Porosity as a Control Parameter for Oxide Thermal Barriers Made by Physical Vapor

Wadley, Haydn

147

Research on fundamental aspects of inorganic vapor and particle deposition in coal-fired systems. Seventh quarterly technical report, March 6, 1992--June 5, 1992  

SciTech Connect (OSTI)

Parallel research studies are underway on the following interrelated and fundamental subjects; Geometrical Approach to Determining the Sticking Probability of Particles Impacting on Convex Solid Surfaces; Correlations for High Schmidt Number Particle Deposition From Dilute Flowing Rational Engineering Suspensions; Average Capture Probability of Arriving Particles Which Are Distributed With ResPect to ImPact VelocitY and Incidence Angle (Relative to Deposit Substrate); Experimental and Theoretical Studies of Vapor Infiltration of Non-isothermal Granular Deposits; Effective Area/Volume of Populations of `MicroPorous` Aerosol Particles (Compact and `Fractal` Quasispherical Aggregates); Effects of Radiative Heat Transfer on the Coagulation Rates of Combustion-Generated Particles; Structure-Sensitivity of Total Mass Deposition Rates from Combustion Product Streams containing Coagulation-Aged Populations of Aggregated Primary Particles; and Na{sub 2}SO{sub 4} Chemical Vapor Deposition From Chlorine-containing Coal-Derived Gases.

Rosner, D.E.

1992-06-01T23:59:59.000Z

148

Thermodynamic analysis and growth of ZrO2 by chloride chemical vapor deposition  

E-Print Network [OSTI]

reaction [9­12], and simple chamber designs (e.g., vertical, cold-wall, axisymmetric chamber) to deposit flow injector can be used. A stagnation plane flow injector (for vertical, cold-wall CVD chambers homogeneous nucleation and/ or reactor wall deposition. For example, Holstein [17] de- monstrated that at high

Anderson, Timothy J.

149

Vapor-Phase Metalation by Atomic Layer Deposition in a Metal-Organic Framework  

E-Print Network [OSTI]

encompass deposition onto micro- and nanopowders14 and coating of nanoparticle films15 as well as aerogel coating of porous materials that exhibit ultrahigh-aspect ratios.12,13 To date, some striking examples

150

Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition  

SciTech Connect (OSTI)

CdTe thin film has been grown by metalorganic chemical vapor deposition (MOCVD) on Ni(100) substrate. Using x-ray pole figure measurements we observed the epitaxial relationship of {111}CdTe// {001}Ni with [110]CdTe//[010]Ni and [112] CdTe//[100]Ni. The 12 diffraction peaks in the (111) pole figure of CdTe film and their relative positions with respect to the four peak positions in the (111) pole figure of Ni substrate are consistent with four equivalent orientational domains of CdTe with three to four superlattice match of about 0.7% in the [110] direction of CdTe and the [010] direction of Ni. The electron backscattered diffraction (EBSD) images show that the CdTe domains are 30 degrees orientated from each other.

GIARE, C [Rensselaer Polytechnic Institute (RPI); RAO, S [Rensselaer Polytechnic Institute (RPI); RILEY, M [Rensselaer Polytechnic Institute (RPI); CHEN, L [Rensselaer Polytechnic Institute (RPI); Goyal, Amit [ORNL; BHAT, I [Rensselaer Polytechnic Institute (RPI); LU, T [Rensselaer Polytechnic Institute (RPI); WANG, G [Rensselaer Polytechnic Institute (RPI)

2012-01-01T23:59:59.000Z

151

ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition  

SciTech Connect (OSTI)

We report a breakthrough in fabricating ZnO homojunction light-emitting diode by metal organic chemical vapor deposition. Using NO plasma, we are able to grow p-type ZnO thin films on n-type bulk ZnO substrates. The as-grown films on glass substrates show hole concentration of 10{sup 16}-10{sup 17} cm{sup -3} and mobility of 1-10 cm{sup 2} V{sup -1} s{sup -1}. Room-temperature photoluminescence spectra reveal nitrogen-related emissions. A typical ZnO homojunction shows rectifying behavior with a turn-on voltage of about 2.3 V. Electroluminescence at room temperature has been demonstrated with band-to-band emission at I=40 mA and defect-related emissions in the blue-yellow spectrum range.

Xu, W.Z.; Ye, Z.Z.; Zeng, Y.J.; Zhu, L.P.; Zhao, B.H.; Jiang, L.; Lu, J.G.; He, H.P.; Zhang, S.B. [State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2006-04-24T23:59:59.000Z

152

Vapor deposition of water on graphitic surfaces: Formation of amorphous ice, bilayer ice, ice I, and liquid water  

SciTech Connect (OSTI)

Carbonaceous surfaces are a major source of atmospheric particles and could play an important role in the formation of ice. Here we investigate through molecular simulations the stability, metastability, and molecular pathways of deposition of amorphous ice, bilayer ice, and ice I from water vapor on graphitic and atomless Lennard-Jones surfaces as a function of temperature. We find that bilayer ice is the most stable ice polymorph for small cluster sizes, nevertheless it can grow metastable well above its region of thermodynamic stability. In agreement with experiments, the simulations predict that on increasing temperature the outcome of water deposition is amorphous ice, bilayer ice, ice I, and liquid water. The deposition nucleation of bilayer ice and ice I is preceded by the formation of small liquid clusters, which have two wetting states: bilayer pancake-like (wetting) at small cluster size and droplet-like (non-wetting) at larger cluster size. The wetting state of liquid clusters determines which ice polymorph is nucleated: bilayer ice nucleates from wetting bilayer liquid clusters and ice I from non-wetting liquid clusters. The maximum temperature for nucleation of bilayer ice on flat surfaces, T{sub B}{sup max} is given by the maximum temperature for which liquid water clusters reach the equilibrium melting line of bilayer ice as wetting bilayer clusters. Increasing water-surface attraction stabilizes the pancake-like wetting state of liquid clusters leading to larger T{sub B}{sup max} for the flat non-hydrogen bonding surfaces of this study. The findings of this study should be of relevance for the understanding of ice formation by deposition mode on carbonaceous atmospheric particles, including soot.

Lupi, Laura; Kastelowitz, Noah; Molinero, Valeria, E-mail: Valeria.Molinero@utah.edu [Department of Chemistry, The University of Utah, 315 South 1400 East, Salt Lake City, Utah 84112-0850 (United States)

2014-11-14T23:59:59.000Z

153

Pulsed chemical vapor deposition of Cu{sub 2}S into a porous TiO{sub 2} matrix  

SciTech Connect (OSTI)

Chalcocite (Cu{sub 2}S) has been deposited via pulsed chemical vapor deposition (PCVD) into a porous TiO{sub 2} matrix using hydrogen sulfide and a metal-organic precursor. The precursor used is similar to the more common Cu(hfac)(tmvs) precursor, but it is fluorine free and exhibits increased thermal stability. The simultaneous exposure of the substrate to the copper precursor and hydrogen sulfide resulted in nonuniform Cu{sub 2}S films with a temperature independent deposition rate implying gas phase reaction kinetics. The exposure of mesoporous TiO{sub 2} and planar ZnO to alternating cycles of the copper precursor and hydrogen sulfide resulted in a PCVD film that penetrated fully into the porous TiO{sub 2} layer with a constant deposition rate of 0.08 nm/cycle over a temperature range of 150-400 deg. C The chalcocite (Cu{sub 2}S) stoichiometry was confirmed with extended x-ray absorption fine structure measurements (EXAFS) and x-ray photoelectron spectroscopy. Calculations of the EXAFS spectrum for different Cu{sub x}S phases show that EXAFS is sensitive to the different phase stoichiometries. Optical absorption measurements of CVD thin films using photothermal deflection spectroscopy show the presence of a metallic copper-poor phase for gas phase nucleated films less than 100 nm thick and a copper-rich semiconducting phase for thicknesses greater than 100 nm with a direct band gap of 1.8 eV and an indirect bandgap of 1.2 eV.

Carbone, I.; Zhou, Q.; Vollbrecht, B.; Yang, L.; Medling, S.; Bezryadina, A.; Bridges, F.; Alers, G. B.; Norman, J. T.; Kinmen, T. [Department of Physics, University of California at Santa Cruz, 1156 High St., Santa Cruz, California 95064 (United States); Air Products Inc., 1969 Palomar Oaks Way, Carlsbad, California 92011 (United States); Department of Physics, Colorado School of Mines, 1500 Illinois St., Golden, Colorado 80401 (United States)

2011-09-15T23:59:59.000Z

154

Study on plasma assisted metal-organic chemical vapor deposition of Zr,,C,N... and Ti,,C,N... thin films and in situ plasma diagnostics with optical  

E-Print Network [OSTI]

films and in situ plasma diagnostics with optical emission spectroscopy S. J. Cho, S.-H. Nam, C.-K. JungStudy on plasma assisted metal-organic chemical vapor deposition of Zr,,C,N... and Ti,,C,N... thin C,N films were synthesized by pulsed dc plasma assisted metal-organic chemical vapor deposition

Boo, Jin-Hyo

155

The Progress on Low-Cost, High-Quality, High-Temperature Superconducting Tapes Deposited by the Combustion Chemical Vapor Deposition Process  

SciTech Connect (OSTI)

The innovative Combustion Chemical Vapor Deposition (CCVD) process is a non-vacuum technique that is being investigated to enable next generation products in several application areas including high-temperature superconductors (HTS). In combination with the Rolling Assisted Biaxially Textured Substrate (RABiTS) technology, the CCVD process has significant promise to provide low-cost, high-quality lengths of YBCO coated conductor. Over 100 meter lengths of both Ni and Ni-W (3 at. Wt.%) substrates with a surface roughness of 12-18 nm were produced. The CCVD technology has been used to deposit both buffer layer coatings as well as YBCO superconducting layers. Buffer layer architecture of strontium titanate (SrTiO{sub 3}) and ceria (CeO{sub 2}) have been deposited by CCVD on textured nickel substrates and optimized to appropriate thicknesses and microstructures to provide templates for growing PLD YBCO with a J{sub c} of 1.1 MA/cm{sup 2} at 77 K and self-field. The CCVD buffer layers have been scaled to meter plus lengths with good epitaxial uniformity along the length. A short sample cut from one of the lengths enabled high critical current density PLD YBCO. Films of CCVD YBCO superconductors have been grown on single crystal substrates with critical current densities over 1 MA/cm{sup 2}. In addition, superconducting YBCO films with an I{sub c} of 60 A/cm-width (J{sub c} = 1.5 MA/cm{sup 2}) were grown on ORNL RABiTS (CeO{sub 2}/YSZ/Y{sub 2}O{sub 3}/Ni/Ni-3W) using CCVD process.

Shoup, S.S.; White, M.K.; Krebs, S.L.; Darnell, N.; King, A.C.; Mattox, D.S.; Campbell, I.H.; Marken, K.R.; Hong, S.; Czabaj, B.; Paranthaman, M.; Christen, H.M.; Zhai, H.-Y. Specht, E.

2008-06-24T23:59:59.000Z

156

Developmental of a Vapor Cloud Explosion Risk Analysis Tool Using Exceedance Methodology  

E-Print Network [OSTI]

cloud explosions [4]. Lenoir and Davenport [5] have presented a review of many major incidents involving vapor cloud explosions worldwide from 1921 to 1991. Hydrocarbon materials such as ethane, ethylene, propane, and butane, which have been involved... are typically either in the form of gas, liquid, or two-phase. Examples of hydrocarbon gas releases are methane through butane, while liquid releases could be crude oil, diesel, jet fuel, or others. An example of a two-phase leak is condensate since it is a...

Alghamdi, Salem

2012-10-19T23:59:59.000Z

157

Characterization of amorphous hydrogenated carbon nitride films prepared by plasma-enhanced chemical vapor deposition using a helical resonator discharge  

SciTech Connect (OSTI)

Amorphous hydrogenated carbon nitride thin films (a-CN{sub x}:H) have been prepared by plasma-enhanced chemical vapor deposition of N{sub 2} and CH{sub 4} gases using a helical resonator discharge. The structural and optical properties of the deposited a-CN{sub x}:H films have been systematically studied as a function of the substrate temperature and radio frequency (rf) substrate bias. The chemical structure and elemental composition of the a-CN{sub x}:H films were characterized by Fourier transform infrared spectroscopy (FT-IR), x-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. The optical properties of the films were evaluated using transmission ultraviolet{endash}visible spectroscopy. The morphology of the films was investigated by scanning electron microscopy and atomic force microscopy. The FT-IR and XPS studies demonstrate the presence of carbon{endash}nitrogen bonds with hydrogenated components in the films. The film composition ratio N/C was found to vary from 0.127 to 0.213 depending on the deposition conditions. The Raman spectra, showing the G and D bands, indicate that the a-CN{sub x}:H films have a graphitic structure. It can be found that the optical band-gap E{sub g} of a-CN{sub x}:H films is associated with graphitic clusters, while the decrease in E{sub g} is correlated with an increase in the size and number of graphitic clusters. Combining the results of Raman and optical measurements, it can be concluded that a progressive graphitization of the films occurs with increasing the substrate temperature and rf substrate bias power, corresponding to bias voltage. {copyright} {ital 1997 American Institute of Physics.}

Kim, J.H.; Ahn, D.H. [LG Electronics Research Center, 16 Woomyeon-Dong, Seocho-Gu, Seoul 137-140 (Korea)] [LG Electronics Research Center, 16 Woomyeon-Dong, Seocho-Gu, Seoul 137-140 (Korea); Kim, Y.H.; Baik, H.K. [Department of Metallurgical Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-ku, Seoul 120-749 (Korea)] [Department of Metallurgical Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-ku, Seoul 120-749 (Korea)

1997-07-01T23:59:59.000Z

158

Multiwalled Carbon Nanotube Forest Grown via Chemical Vapor Deposition from Iron Catalyst Nanoparticles, by XPS  

SciTech Connect (OSTI)

Carbon nanotubes (CNTs) have unique chemical and physical properties. Herein, we report an XPS analysis of a forest of multiwalled CNTs using monochromatic Al K? radiation. Survey scans show only one element: carbon. The carbon 1s peak is centered 284.5 eV. The C 1s envelope also shows the expected ? ? ?* shake-up peak at ca. 291 eV. The valence band and carbon KVV Auger signals are presented. When patterned, the CNT forests can be used as a template for subsequent deposition of metal oxides to make thin layer chromatography plates.1-3

Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

2013-09-25T23:59:59.000Z

159

Step-coverage simulation for tetraethoxysilane and ozone atmospheric pressure chemical vapor deposition  

SciTech Connect (OSTI)

A simulation model for atmospheric pressure (AP) CVD has bee developed using one-dimensional diffusion and mass conservation equations. The model was applied to trench step-coverage of the tetraethoxysilane (TEOS) and O[sub 3] CVD, in which it was not necessary to consider lateral diffusion because of narrow (and deep) trenches. For nondoped silicate glass (NSG), the step-coverage of a 4.5 aspect ratio trench showed a good fit if a sticking probability of 0.0039 was assumed for the 0.6% ozone (in oxygen) deposition and of 0.0026 for the 6% ozone deposition (both 400 C). The reaction rate constant was compared with the diffusion mass-transfer coefficient, and the reaction proved to be limited by diffusion of the reactant, TEOS, which directly participated in the CVD reaction. For the 2 m/o phosphosilicate glass (PSG) step-coverage, which had a slight overhang, the model matched the obtained results well only when an active growth species with a high sticking probability of 1.0 was added to the growth species of nondoped oxide. This analytical simulation method satisfactorily explains the experimental data.

Fujino, K. (Semiconductor Process Lab., Toyko (Japan)); Egashira, Y.; Shimogaki, Y.; Komiyama, H. (Univ. of Tokyo, (Japan). Dept. of Chemical Engineering)

1993-08-01T23:59:59.000Z

160

Tooling Factor Calculation In order to yield a more accurate indication of a deposited film's thickness, the rate  

E-Print Network [OSTI]

Tooling Factor Calculation In order to yield a more accurate indication of a deposited film's thickness, the rate monitor's tooling factor attempts to compensate for necessary differences member before changing an established tooling factor. 1. Position a sample, masked on a half

Kim, Philip

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161

Plasma-enriched chemical vapor deposition of silicon nitride on silicon carbide fibers  

SciTech Connect (OSTI)

Near stoichiometric Si:N coatings were deposited by means of PECVD on SCS-6 SiC fibers which contained a carbon-rich coating. Weight loss associated with oxidation of the outer carbon-rich coating of the as-received SiC fibers was greatly reduced for the Si:N coated SiC fibers even after 10 h heat-treatment in oxygen at 800{degrees}C. Auger Electron Spectroscopy (AES) was used to obtain elemental compositions of the as-received and Si:N coated SiC fibers after heat-treatment. Negligible amounts of oxygen were found at the carbon-rich coating of the heat-treated Si:N coated SiC fiber. These results clearly prove the effectiveness of PECVD silicon nitride coating as an oxygen diffusion barrier.

Stinespring, C.D.; Collazos, D.F.; Gupta, R.K. [West Virginia Univ., Morgantown, WV (United States)] [and others

1994-12-31T23:59:59.000Z

162

Analysis of buoyancy and tube rotation relative to the modified chemical vapor deposition process  

SciTech Connect (OSTI)

The secondary flows resulting from buoyancy effects in respect to the MCVD process have been studied in a rotating horizontal tube using a perturbation analysis. The three-dimensional secondary flow fields have been determined at several axial locations in a tube whose temperature varies in both the axial and circumferential directions for different rotational speeds. For small rotational speeds, buoyancy and axial convection are dominant and the secondary flow patterns are different in the regions near and far from the torch. For moderate rotational speeds, the effects of buoyancy, axial and angular convection are all important in the region far from the torch where there is a spiraling secondary flow. For large rotational speeds, only buoyancy and angular convection effects are important and no spiraling secondary motions occurs far downstream. Compared with thermophoresis, the important role of buoyancy in determining particle trajectories in MCVD is presented. As the rotational speed increases, the importance of the secondary flow decreases and the thermophoretic contribution vecomes more important. It is noted that thermophoresis is considered to be the main cause of particle deposition in the MCVD process.

Choi, M.; Lin, Y.T.; Greif, R. (Univ. of California, Berkeley (USA))

1990-11-01T23:59:59.000Z

163

The Effect of High Temperature Annealing on the Grain Characteristics of a Thin Chemical Vapor Deposition Silicon Carbide Layer.  

SciTech Connect (OSTI)

The unique combination of thermo-mechanical and physiochemical properties of silicon carbide (SiC) provides interest and opportunity for its use in nuclear applications. One of the applications of SiC is as a very thin layer in the TRi-ISOtropic (TRISO) coated fuel particles for high temperature gas reactors (HTGRs). This SiC layer, produced by chemical vapor deposition (CVD), is designed to withstand the pressures of fission and transmutation product gases in a high temperature, radiation environment. Various researchers have demonstrated that macroscopic properties can be affected by changes in the distribution of grain boundary plane orientations and misorientations [1 - 3]. Additionally, various researchers have attributed the release behavior of Ag through the SiC layer as a grain boundary diffusion phenomenon [4 - 6]; further highlighting the importance of understanding the actual grain characteristics of the SiC layer. Both historic HTGR fission product release studies and recent experiments at Idaho National Laboratory (INL) [7] have shown that the release of Ag-110m is strongly temperature dependent. Although the maximum normal operating fuel temperature of a HTGR design is in the range of 1000-1250°C, the temperature may reach 1600°C under postulated accident conditions. The aim of this specific study is therefore to determine the magnitude of temperature dependence on SiC grain characteristics, expanding upon initial studies by Van Rooyen et al, [8; 9].

Isabella J van Rooyen; Philippus M van Rooyen; Mary Lou Dunzik-Gougar

2013-08-01T23:59:59.000Z

164

Activity and Evolution of Vapor Deposited Pt-Pd Oxygen Reduction Catalysts for Solid Acid Fuel Cells  

SciTech Connect (OSTI)

The performance of hydrogen fuel cells based on the crystalline solid proton conductor CsH2PO4 is circumscribed by the mass activity of platinum oxygen reduction catalysts in the cathode. Here we report on the first application of an alloy catalyst in a solid acid fuel cell, and demonstrate an activity 4.5 times greater than Pt at 0.8 V. These activity enhancements were obtained with platinum-palladium alloys that were vapor-deposited directly on CsH2PO4 at 210 C. Catalyst mass activity peaks at a composition of 84 at% Pd, though smaller activity enhancements are observed for catalyst compositions exceeding 50 at% Pd. Prior to fuel cell testing, Pd-rich catalysts display lattice parameter expansions of up to 2% due to the presence of interstitial carbon. After fuel cell testing, a Pt-Pd solid solution absent of lattice dilatation and depleted in carbon is recovered. The structural evolution of the catalysts is correlated with catalyst de-activation.

Papandrew, Alexander B [ORNL; Chisholm, Calum R [ORNL; Zecevic, strahinja [LiOx, Inc., Pasadena, California 91106, United States; Veith, Gabriel M [ORNL; Zawodzinski, Thomas A [ORNL

2013-01-01T23:59:59.000Z

165

Mass densification and defect restoration in chemical vapor deposition silicon dioxide film using Ar plasma excited by microwave  

SciTech Connect (OSTI)

Silicon dioxide (SiO{sub 2}) films formed by chemical vapor deposition (CVD) have been treated with Ar plasma excited by microwave. The changes of the mass densities, carrier trap densities, and thicknesses of the CVD-SiO{sub 2} films with the Ar plasma treatments were investigated. The mass density depth profiles were estimated with X-Ray Reflectivity (XRR) analysis using synchrotron radiation. The densities of carrier trap centers due to defects of Si-O bond network were estimated with X-ray Photoelectron Spectroscopy (XPS) time-dependent measurement. The changes of the thicknesses due to the oxidation of Si substrates were estimated with the XRR and XPS. The mass densities of the CVD-SiO{sub 2} films are increased by the Ar plasma treatments. The carrier trap densities of the films are decreased by the treatments. The thicknesses of the films are not changed by the treatments. It has been clarified that the mass densification and defect restoration in the CVD-SiO{sub 2} films are caused by the Ar plasma treatments without the oxidation of the Si substrates.

Kawase, Kazumasa, E-mail: Kawase.Kazumasa@ak.MitsubishiElectric.co.jp; Motoya, Tsukasa; Uehara, Yasushi [Advanced Technology R and D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661 (Japan); Teramoto, Akinobu; Suwa, Tomoyuki; Ohmi, Tadahiro [New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan)

2014-09-01T23:59:59.000Z

166

Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC  

SciTech Connect (OSTI)

The transport properties of quasi-free-standing (QFS) bilayer graphene on SiC depend on a range of scattering mechanisms. Most of them are isotropic in nature. However, the SiC substrate morphology marked by a distinctive pattern of the terraces gives rise to an anisotropy in graphene's sheet resistance, which may be considered an additional scattering mechanism. At a technological level, the growth-preceding in situ etching of the SiC surface promotes step bunching which results in macro steps ?10?nm in height. In this report, we study the qualitative and quantitative effects of SiC steps edges on the resistance of epitaxial graphene grown by chemical vapor deposition. We experimentally determine the value of step edge resistivity in hydrogen-intercalated QFS-bilayer graphene to be ?190???m for step height h{sub S}?=?10?nm and provide proof that it cannot originate from mechanical deformation of graphene but is likely to arise from lowered carrier concentration in the step area. Our results are confronted with the previously reported values of the step edge resistivity in monolayer graphene over SiC atomic steps. In our analysis, we focus on large-scale, statistical properties to foster the scalable technology of industrial graphene for electronics and sensor applications.

Ciuk, Tymoteusz [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Cakmakyapan, Semih; Ozbay, Ekmel [Department of Electrical and Electronics Engineering, Department of Physics, Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara (Turkey); Caban, Piotr; Grodecki, Kacper; Pasternak, Iwona; Strupinski, Wlodek, E-mail: wlodek.strupinski@itme.edu.pl [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Krajewska, Aleksandra [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Institute of Optoelectronics, Military University of Technology, Gen. S. Kaliskiego 2, 00-908 Warsaw (Poland); Szmidt, Jan [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland)

2014-09-28T23:59:59.000Z

167

Properties of chemical vapor deposited tungsten silicide films using reaction of WF/sub 6/ and Si/sub 2/H/sub 6/  

SciTech Connect (OSTI)

Tungsten silicide films were formed by the chemical vapor deposition method using the reaction WF/sub 6/ and Si/sub 2/H/sub 6/. The deposition rate, resistivity, composition, stress, crystal structure, and content of impurities were studied and compared with tungsten silicide films deposited by reaction of WF/sub 6/ and SiH/sub 4/. The tungsten silicide films made using Si/sub 2/H/sub 6/ have a higher deposition rate and higher Si concentration than those made by using SiH/sub 4/ at the same substrate temperature. For these reasons, the tungsten silicide films made by using Si/sub 2/H/sub 6/ were found to have a resistivity that is a little higher and, after annealing, a stress that is smaller than that made by SiH/sub 4/.

Shioya, Y.; Ikegami, K.; Kobayashi, I.; Maeda, M.

1987-05-01T23:59:59.000Z

168

Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition  

SciTech Connect (OSTI)

Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here, we report that, in the droplet epitaxy of InAs/GaAs(001) QDs using metal-organic chemical vapor deposition, significant elemental diffusion from the substrate to In droplets occurs, resulting in the formation of In(Ga)As crystals, before As flux is provided. The supply of As flux suppresses the further elemental diffusion from the substrate and promotes surface migration, leading to large island formation with a low island density.

Chen, Z. B.; Chen, B.; Wang, Y. B.; Liao, X. Z., E-mail: xiaozhou.liao@sydney.edu.au [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006 (Australia); Lei, W. [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Perth, WA 6009 (Australia); Tan, H. H.; Jagadish, C. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Zou, J. [Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane, QLD 4072 (Australia); Ringer, S. P. [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006 (Australia); Australian Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, NSW 2006 (Australia)

2014-01-13T23:59:59.000Z

169

Calibrated vapor generator source  

DOE Patents [OSTI]

A portable vapor generator is disclosed that can provide a controlled source of chemical vapors, such as, narcotic or explosive vapors. This source can be used to test and calibrate various types of vapor detection systems by providing a known amount of vapors to the system. The vapor generator is calibrated using a reference ion mobility spectrometer. A method of providing this vapor is described, as follows: explosive or narcotic is deposited on quartz wool, placed in a chamber that can be heated or cooled (depending on the vapor pressure of the material) to control the concentration of vapors in the reservoir. A controlled flow of air is pulsed over the quartz wool releasing a preset quantity of vapors at the outlet. 10 figs.

Davies, J.P.; Larson, R.A.; Goodrich, L.D.; Hall, H.J.; Stoddard, B.D.; Davis, S.G.; Kaser, T.G.; Conrad, F.J.

1995-09-26T23:59:59.000Z

170

Robofurnace: A semi-automated laboratory chemical vapor deposition system for high-throughput nanomaterial synthesis and process discovery  

SciTech Connect (OSTI)

Laboratory research and development on new materials, such as nanostructured thin films, often utilizes manual equipment such as tube furnaces due to its relatively low cost and ease of setup. However, these systems can be prone to inconsistent outcomes due to variations in standard operating procedures and limitations in performance such as heating and cooling rates restrict the parameter space that can be explored. Perhaps more importantly, maximization of research throughput and the successful and efficient translation of materials processing knowledge to production-scale systems, relies on the attainment of consistent outcomes. In response to this need, we present a semi-automated lab-scale chemical vapor deposition (CVD) furnace system, called “Robofurnace.” Robofurnace is an automated CVD system built around a standard tube furnace, which automates sample insertion and removal and uses motion of the furnace to achieve rapid heating and cooling. The system has a 10-sample magazine and motorized transfer arm, which isolates the samples from the lab atmosphere and enables highly repeatable placement of the sample within the tube. The system is designed to enable continuous operation of the CVD reactor, with asynchronous loading/unloading of samples. To demonstrate its performance, Robofurnace is used to develop a rapid CVD recipe for carbon nanotube (CNT) forest growth, achieving a 10-fold improvement in CNT forest mass density compared to a benchmark recipe using a manual tube furnace. In the long run, multiple systems like Robofurnace may be linked to share data among laboratories by methods such as Twitter. Our hope is Robofurnace and like automation will enable machine learning to optimize and discover relationships in complex material synthesis processes.

Oliver, C. Ryan; Westrick, William; Koehler, Jeremy; Brieland-Shoultz, Anna; Anagnostopoulos-Politis, Ilias; Cruz-Gonzalez, Tizoc [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)] [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Hart, A. John, E-mail: ajhart@mit.edu [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2013-11-15T23:59:59.000Z

171

Growth of Large-Area Aligned Molybdenum Nanowires by High Temperature Chemical Vapor Deposition: Synthesis, Growth Mechanism, and Device Application  

E-Print Network [OSTI]

, thermogravimetry, and differential scanning calorimetry analysis, as well as structure analysis by electron on the decomposition of MoO2 vapors through condensation of its vapor at high substrate temperatures. The aligned nanowires with H2 gas.6d-f However, the reduction process degrades the crystal- linity of the nanowires

Wang, Zhong L.

172

Atmospheric Pressure Chemical Vapor Deposition of High Silica SiO2-TiO2 Antireflective Thin Films for Glass Based Solar Panels  

SciTech Connect (OSTI)

The atmospheric pressure chemical vapor deposition (APCVD) of SiO2-TiO2 thin films employing [[(tBuO)3Si]2O-Ti(OiPr)2], which can be prepared from commercially available materials, results in antireflective thin films on float glass under industrially relevant manufacturing conditions. It was found that while the deposition temperature had an effect on the SiO2:TiO2 ratio, the thickness was dependent on the time of deposition. This study shows that it is possible to use APCVD employing a single source precursor containing titanium and silicon to produce thin films on float glass with high SiO2:TiO2 ratios.

Klobukowski, Erik R [ORNL; Tenhaeff, Wyatt E [ORNL; McCamy, James [PPG; Harris, Caroline [PPG; Narula, Chaitanya Kumar [ORNL

2013-01-01T23:59:59.000Z

173

Mat. Res. Soc. Symp. Proc. Vol. 612 2000 Materials Research Society VOLATILE LIQUID PRECURSORS FOR THE CHEMICAL VAPOR DEPOSITION  

E-Print Network [OSTI]

. These tungsten oxide films can be used as part of electrochromic windows, mirrors or displays. Physical in microelectronics.5 CVD using both W(CO)6 vapor and oxygen gas, O2, has produced electrochromic films of tungsten

174

Synthesis of SiO{sub 2}/?-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition  

SciTech Connect (OSTI)

?-SiC thin films were synthesized directly on graphite by hot filament chemical vapor deposition at low temperature. SiH{sub 4} diluted in hydrogen was employed as the silicon source, while graphite was functioned as both substrate and carbon source for the as-grown ?-SiC films. X-ray diffraction and Fourier transform infrared analysis indicate that SiO{sub 2}/?-SiC/graphite hybrid composite was formed after post annealing treatment, and its crystalline quality can be remarkably improved under optimized annealing conditions. The possible growth mechanism was proposed based on in situ etching of graphite by reactive hydrogen radicals at the atomic level.

Zhang, Zhikun; Bi, Kaifeng; Liu, Yanhong; Qin, Fuwen; Liu, Hongzhu [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)] [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Bian, Jiming, E-mail: jmbian@dlut.edu.cn [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050 (China); Zhang, Dong [New Energy Source Research Center of Shenyang Institute of Engineering, Shengyang 110136 (China)] [New Energy Source Research Center of Shenyang Institute of Engineering, Shengyang 110136 (China); Miao, Lihua [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Department of Computer and Mathematical Basic Teaching, Shenyang Medical College, Shenyan 110034 (China)

2013-11-18T23:59:59.000Z

175

The optimization of interfaces in InAsSb/InGaAs strained-layer superlattices grown by metal-organic chemical vapor deposition  

SciTech Connect (OSTI)

We have prepared InAsSb/InGaAs strained-layer superlattice (SLS) semiconductors by metal-organic chemical vapor deposition (MOCVD) under a variety of conditions. Presence of an InGaAsSb interface layer is indicated by x-ray diffraction patterns. Optimized growth conditions involved the use of low pressure, short purge times, and no reactant flow during the purges. MOCVD was used to prepare an optically pumped, single heterostructure InAsSb/InGaAs SLS/InPSb laser which emitted at 3.9 {mu}m with a maximum operating temperature of approximately 100 K.

Biefeld, R.M.; Baucom, K.C.; Kurtz, S.R.

1993-12-31T23:59:59.000Z

176

Veeco Develops a Tool to Reduce Epitaxy Costs and Increase LED Brightness  

Broader source: Energy.gov [DOE]

With the help of DOE funding, Veeco is working on reducing epitaxy costs and increasing LED efficiency by developing a physical vapor deposition (PVD) tool for depositing aluminum nitride buffer layers on LED substrates. PVD, also known as "sputtering," is an alternative to metal-organic chemical vapor deposition (MOCVD). PVD is a purely physical process that involves plasma sputter bombardment rather than a chemical reaction at the surface to be coated, as in MOCVD.

177

Diode-laser-based atomic absorption monitor using frequency-modulation spectroscopy for physical vapor deposition process control  

E-Print Network [OSTI]

Diode-laser-based atomic absorption monitor using frequency-modulation spectroscopy for physical, and the dynamic events occur- ring as vapors condense on a substrate. Atomic absorption AA spectroscopy also been measured by means of the Doppler frequency shifts of the atomic absorption with respect

Fejer, Martin M.

178

Research on fundamental aspects of inorganic vapor and particle deposition in coal-fired systems. Eighth quarterly technical progress report, June 6, 1992--September 5, 1992  

SciTech Connect (OSTI)

In September 1990 DOE-PETC initiated at the Yale HTCRE Laboratory a systematic three-year research program directed toward providing engineers with the fundamentally-based design/optimization `tools` for economically predicting the dynamics of net deposit growth*, and thermophysical properties of the resulting microparticulate deposits in coal-fired systems. In light of the theoretical `program` based on the notion of ``self-regulation`` set forth in Rosner and Nagarajan (1987), this Task includes investigation of the effects of particle material properties and possible liquid phases on the capture properties of particulate deposits. For this purpose we exploit dynamical `many-body` computer simulation techniques. This approach will provide the required parametric dependencies (on such quantities as incident kinetic energy and angle, mechanical and thermophysical properties of the particles,{hor_ellipsis}) of a dimensionless ensemble-averaged particle capture fraction, relegating the role of direct laboratory experiment to verifying (or rejecting) some crucial features/consequences of the simulation route followed. Our ultimate goal is recommend `sticking` and `erosion` laws of mechanistic origin. The availability of such laws could dramatically increase the reliability of predicted deposition rates of inertially delivered particles, in the simultaneous presence of a condensed liquid phase within the growing particulate, deposit. Equally important, one could also rationally select conditions to avoid. troublesome deposition subject to other operational requirements.

Rosner, D.E.

1992-09-01T23:59:59.000Z

179

Measurement and modeling of Ar/H2/CH4 arc jet discharge chemical vapor deposition reactors. I. Intercomparison  

E-Print Network [OSTI]

of thin, polycrystalline diamond films, and the results of a two-dimensional r,z computer model domains. dc arc jets offer considerable advantages as a route to deposition of polycrystalline diamond

Bristol, University of

180

A three-dimensional analysis of the flow and heat transfer for the modified chemical vapor deposition process including buoyancy, variable properties, and tube rotation  

SciTech Connect (OSTI)

A study has been made of the heat transfer, flow, and particle deposition relative to the modified chemical vapor deposition (MCVD) process. The effects of variable properties, buoyancy, and tube rotation have been included in the study. The resulting three-dimensional temperature and velocity fields have been obtained for a range of conditions. The effects of buoyancy result in asymmetric temperature and axial velocity profiles with respect to the tube axis. Variable properties cause significant variations in the axial velocity along the tube and in the secondary flow in the region near the torch. Particle trajectories are shown to be strongly dependent on the tube rotation and are helices for large rotational speeds. The component of secondary flow in the radial direction is compared to the thermophoretic velocity, which is the primary cause of particle deposition in the MCVD process. Over the central portion of the tube the radial component of the secondary flow is most important in determining the motion of the particles.

Lin, Y.T.; Choi, M.; Greif, R. (Univ. of California, Berkeley (USA))

1991-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Co-Pt core-shell nanostructured catalyst prepared by selective chemical vapor pulse deposition of Pt on Co as a cathode in polymer electrolyte fuel cells  

SciTech Connect (OSTI)

A new type of PtCo/C catalyst for use as a cathode in polymer electrolyte fuel cells was prepared by selective chemical vapor pulse deposition (CVPD) of Pt on the surface of Co. The activity of the prepared catalyst for oxygen reduction was higher than that of a catalyst prepared by sequential impregnation (IMP) with the two metallic components. This catalytic activity difference occurs because the former catalyst has smaller Pt crystallites that produce stronger Pt-Co interactions and have a larger Pt surface area. Consequently, the CVPD catalyst has a great number of Co particles that are in close contact with the added Pt. The Pt surface was also electronically modified by interactions with Co, which were stronger in the CVPD catalyst than in the IMP catalyst, as indicated by X-ray diffraction, X-ray photoemission spectroscopy, and cyclic voltammetry measurements of the catalysts.

Seo, Sang-Joon; Chung, Ho-Kyoon [SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Human Interface Nanotechnology (HINT), Sungkyunkwan University, Suwon, Gyeonggi 440-746 (Korea, Republic of); Yoo, Ji-Beom [SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Human Interface Nanotechnology (HINT), Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea and School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746 (Korea, Republic of); Chae, Heeyeop; Seo, Seung-Woo; Min Cho, Sung, E-mail: sungmcho@skku.edu [School of Chemical Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746 (Korea, Republic of)

2014-01-15T23:59:59.000Z

182

Optimization of InAsSb/InGaAs strained-layer superlattice growth by metal-organic chemical vapor deposition for use in infrared emitters  

SciTech Connect (OSTI)

We have prepared InAsSb/InGaAs strained-layer superlattices (SLSs) by metal-organic chemical vapor deposition using a variety of growth conditions. Presence of an InGaAsSb interface layer was indicated by x-ray diffraction. This interface effect was minimized by optimizing the purge times, reactant flows, and growth conditions. The optimized growth conditions involved the use of low pressure, short purge times between the growth of the layers, and no reactant flow during the purges. Electron diffraction indicates that CuPt-type compositional ordering occurs in InAs{sub 1{minus}x}Sb{sub x} alloys and SLSs which explains an observed bandgap reduction from previously accepted alloy values.

Biefeld, R.M.; Baucom, K.C.; Follstaedt, D.M.; Kurtz, S.R.

1994-08-01T23:59:59.000Z

183

Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes  

SciTech Connect (OSTI)

We demonstrate a metalorganic chemical vapor deposition growth approach for inverting N-polar to Ga-polar GaN by using a thin inversion layer grown with high Mg flux. The introduction of this inversion layer allowed us to grow p-GaN films on N-polar GaN thin film. We have studied the dependence of hole concentration, surface morphology, and degree of polarity inversion for the inverted Ga-polar surface on the thickness of the inversion layer. We then use this approach to grow a light emitting diode structure which has the MQW active region grown on the advantageous N-polar surface and the p-layer grown on the inverted Ga-polar surface.

Hosalli, A. M.; Van Den Broeck, D. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)

2013-12-02T23:59:59.000Z

184

Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits  

SciTech Connect (OSTI)

Single layer graphene (SLG) grown by chemical vapor deposition (CVD) has been investigated for its prospective application as horizontal interconnects in very large scale integrated circuits. However, the major bottleneck for its successful application is its degraded electronic transport properties due to the resist residual trapped in the grain boundaries and on the surface of the polycrystalline CVD graphene during multi-step lithographic processes, leading to increase in its sheet resistance up to 5 M?/sq. To overcome this problem, current induced annealing has been employed, which helps to bring down the sheet resistance to 10?k?/sq (of the order of its initial value). Moreover, the maximum current density of ?1.2?×?10{sup 7?}A/cm{sup 2} has been obtained for SLG (1?×?2.5??m{sup 2}) on SiO{sub 2}/Si substrate, which is about an order higher than that of conventionally used copper interconnects.

Prasad, Neetu, E-mail: neetu.prasad@south.du.ac.in, E-mail: neetu23686@gmail.com; Kumari, Anita; Bhatnagar, P. K.; Mathur, P. C. [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021 (India); Bhatia, C. S. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

2014-09-15T23:59:59.000Z

185

Toward epitaxially grown two-dimensional crystal hetero-structures: Single and double MoS{sub 2}/graphene hetero-structures by chemical vapor depositions  

SciTech Connect (OSTI)

Uniform large-size MoS{sub 2}/graphene hetero-structures fabricated directly on sapphire substrates are demonstrated with layer-number controllability by chemical vapor deposition (CVD). The cross-sectional high-resolution transmission electron microscopy (HRTEM) images provide the direct evidences of layer numbers of MoS{sub 2}/graphene hetero-structures. Photo-excited electron induced Fermi level shift of the graphene channel are observed on the single MoS{sub 2}/graphene hetero-structure transistors. Furthermore, double hetero-structures of graphene/MoS{sub 2}/graphene are achieved by CVD fabrication of graphene layers on top of the MoS{sub 2}, as confirmed by the cross-sectional HRTEM. These results have paved the possibility of epitaxially grown multi-hetero-structures for practical applications.

Lin, Meng-Yu [Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Chang, Chung-En [Department of Photonics, National Chiao-Tung University, Hsinchu, Taiwan (China); Wang, Cheng-Hung [Institute of Display, National Chiao-Tung University, Hsinchu, Taiwan (China); Su, Chen-Fung; Chen, Chi [Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Lee, Si-Chen [Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan (China); Lin, Shih-Yen, E-mail: shihyen@gate.sinica.edu.tw [Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Department of Photonics, National Chiao-Tung University, Hsinchu, Taiwan (China)

2014-08-18T23:59:59.000Z

186

Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition  

SciTech Connect (OSTI)

We propose to grow graphene on SiC by a direct carbon feeding through propane flow in a chemical vapor deposition reactor. X-ray photoemission and low energy electron diffraction show that propane allows to grow few-layer graphene (FLG) on 6H-SiC(0001). Surprisingly, FLG grown on (0001) face presents a rotational disorder similar to that observed for FLG obtained by annealing on (000-1) face. Thanks to a reduced growth temperature with respect to the classical SiC annealing method, we have also grown FLG/3C-SiC/Si(111) in a single growth sequence. This opens the way for large-scale production of graphene-based devices on silicon substrate.

Michon, A.; Vezian, S.; Portail, M. [CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne (France); Ouerghi, A. [CNRS-LPN, Route de Nozay, 91460 Marcoussis (France); Zielinski, M.; Chassagne, T. [NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)

2010-10-25T23:59:59.000Z

187

Research on fundamental aspects of inorganic vapor and particle deposition in coal-fired systems. Quarterly technical report, December 6, 1991--March 5, 1992  

SciTech Connect (OSTI)

In September 1990 DOE-PETC initiated at the Yale HTCRE Laboratory a systematic three-year research program directed toward providing engineers with the fundamentally-based design/optimization ``tools`` foreconomically predicting the dynamics of net deposit growth, and thermophysical properties of the resulting microparticulate deposits in coal-fired systems. The goal of our research in the area of mineral mattertransport is to advance the capability of making reliable engineering predictions of the dynamics of net deposit growth for surfaces exposed to the particle-laden products of coal combustion. To accomplish thisfor a wide variety of combustor types, coal types, and operating conditions, this capability must be based on a quantitative understanding of each of the important mechanisms of mineral matter transport, as well as the nature of the interactions between these substances and the prevailing ``fireside`` surface of deposits. This level of understanding and predictive capability could be translated into very significant cost reductions for coal-fired equipment design, development and operation. It is also expected that this research activity will not only directly benefit the ash deposition R&D community -- but also generically closely related technologies of importance to DOE (e.g. hot-gas clean-up, particulate solids handling,...).

Rosner, D.E.

1992-03-01T23:59:59.000Z

188

Epitaxial growth of BaTiO3 thin films at 600 C by metalorganic chemical vapor deposition  

E-Print Network [OSTI]

with an a-axis perpendicular to the substrate plane. Nanoscale energy dispersive x-ray spectrometry processes include deposition over large areas, high throughput, and uniform coverage of nonplanar shapes by a plasma-enhanced MOCVD pro- cess. It is not known if the added energy from the plasma generates structural

Wang, Zhong L.

189

Self-assembled Fe nanowires using organometallic chemical vapor deposition and CaF2 masks on stepped Si,,111...  

E-Print Network [OSTI]

using other methods, such as pyrolysis.7 After the first Fe monolayer is deposited, the selective are created by growing 1­2 monolayers of CaF2 at a substrate temperature of 600 °C, flashing to 830 °C a few

Himpsel, Franz J.

190

Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors  

SciTech Connect (OSTI)

Two schemes of nucleation and growth of gallium nitride on Si(111) substrates are investigated and the structural and electrical properties of the resulting films are reported. Gallium nitride films grown using a 10{endash}500 nm-thick AlN buffer layer deposited at high temperature ({similar_to}1050{degree}C) are found to be under 260{endash}530 MPa of tensile stress and exhibit cracking, the origin of which is discussed. The threading dislocation density in these films increases with increasing AlN thickness, covering a range of 1.1 to {gt}5.8{times}10{sup 9}cm{sup {minus}2}. Films grown using a thick, AlN-to-GaN graded buffer layer are found to be under compressive stress and are completely crack free. Heterojunction field effect transistors fabricated on such films result in well-defined saturation and pinch-off behavior with a saturated current of {similar_to}525 mA/mm and a transconductance of {similar_to}100 mS/mm in dc operation. {copyright} 2001 American Institute of Physics.

Marchand, H.; Zhao, L.; Zhang, N.; Moran, B.; Coffie, R.; Mishra, U. K.; Speck, J. S.; DenBaars, S. P.; Freitas, J. A.

2001-06-15T23:59:59.000Z

191

Rapid assessment of mid-infrared refractive index anisotropy using a prism coupler: chemical vapor deposited ZnS  

SciTech Connect (OSTI)

A state-of-the-art mid-infrared prism coupler was used to study the refractive index properties of forward-looking-infrared (FLIR) grade zinc sulfide samples prepared with unique planar grain orientations and locations with respect to the CVD growth axis. This study was motivated by prior photoluminescence and x-ray diffraction measurements that suggested refractive index may vary according to grain orientation. Measurements were conducted to provide optical dispersion and thermal index (dn/dT) data at discrete laser wavelengths between 0.633 and 10.591 {mu}m at two temperature set points (30 C and 90 C). Refractive index measurements between samples exhibited an average standard deviation comparable to the uncertainty of the prism coupler measurement (0.0004 refractive index units), suggesting that the variation in refractive index as a function of planar grain orientation and CVD deposition time is negligible, and should have no impact on subsequent optical designs. Measured dispersion data at mid-infrared wavelengths was found to agree well with prior published measurements.

Qiao, Hong (Amy) [Amy; Lipschultz, Kristen A.; Anheier, Norman C.; McCloy, John S.

2012-04-01T23:59:59.000Z

192

Nanocrystalline-Si-dot multi-layers fabrication by chemical vapor deposition with H-plasma surface treatment and evaluation of structure and quantum confinement effects  

SciTech Connect (OSTI)

100-nm-thick nanocrystalline silicon (nano-Si)-dot multi-layers on a Si substrate were fabricated by the sequential repetition of H-plasma surface treatment, chemical vapor deposition, and surface oxidation, for over 120 times. The diameter of the nano-Si dots was 5–6 nm, as confirmed by both the transmission electron microscopy and X-ray diffraction analysis. The annealing process was important to improve the crystallinity of the nano-Si dot. We investigated quantum confinement effects by Raman spectroscopy and photoluminescence (PL) measurements. Based on the experimental results, we simulated the Raman spectrum using a phenomenological model. Consequently, the strain induced in the nano-Si dots was estimated by comparing the experimental and simulated results. Taking the estimated strain value into consideration, the band gap modulation was measured, and the diameter of the nano-Si dots was calculated to be 5.6 nm by using PL. The relaxation of the q ? 0 selection rule model for the nano-Si dots is believed to be important to explain both the phenomena of peak broadening on the low-wavenumber side observed in Raman spectra and the blue shift observed in PL measurements.

Kosemura, Daisuke, E-mail: d-kose@isc.meiji.ac.jp; Mizukami, Yuki; Takei, Munehisa; Numasawa, Yohichiroh; Ogura, Atsushi [School of Science and Technology, Meiji University, Kawasaki 214-8571 (Japan)] [School of Science and Technology, Meiji University, Kawasaki 214-8571 (Japan); Ohshita, Yoshio [Toyota Technological Institute, Nagoya 468-8511 (Japan)] [Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-01-15T23:59:59.000Z

193

Direct Growth Graphene on Cu Nanoparticles by Chemical Vapor Deposition as Surface-Enhanced Raman Scattering Substrate for Label-Free Detection of Adenosine  

E-Print Network [OSTI]

We present a graphene/Cu nanoparticle hybrids (G/CuNPs) system as a surface-enhanced Raman scattering (SERS) substrate for adenosine detection. The Cu nanoparticles wrapped around a monolayer graphene shell were directly synthesized on flat quartz by chemical vapor deposition in a mixture of methane and hydrogen. The G/CuNPs showed an excellent SERS enhancement activity for adenosine. The minimum detected concentration of the adenosine in serum was demonstrated as low as 5 nM, and the calibration curve showed a good linear response from 5 to 500 nM. The capability of SERS detection of adenosine in real normal human urine samples based on G/CuNPs was also investigated and the characteristic peaks of adenosine were still recognizable. The reproducible and the ultrasensitive enhanced Raman signals could be due to the presence of an ultrathin graphene layer. The graphene shell was able to enrich and fix the adenosine molecules, which could also efficiently maintain chemical and optical stability of G/CuNPs. Based...

Xu, Shicai; Jiang, Shouzhen; Wang, Jihua; Wei, Jie; Xu, Shida; Liu, Hanping

2015-01-01T23:59:59.000Z

194

Structural, compositional, and photoluminescence characterization of thermal chemical vapor deposition-grown Zn{sub 3}N{sub 2} microtips  

SciTech Connect (OSTI)

The catalytic growth of Zn{sub 3}N{sub 2} using guided-stream thermal chemical vapor deposition has been investigated within the parameter range of acicular growth to obtain uniform microtips with a high crystalline quality. The cubic anti-bixbyite crystal structure of Zn{sub 3}N{sub 2} microtips and its related phonon mode are revealed by X-ray diffraction and Raman spectroscopy, respectively. The surface morphologies of pure and surface-oxidized Zn{sub 3}N{sub 2} microtips are depicted by scanning electron microscopy and show the crack formation on the surface-oxidized Zn{sub 3}N{sub 2} microtips. The spatial element distribution map confirms the VLS growth mechanism for Zn{sub 3}N{sub 2} microtips and reveals the depth profile of zinc, nitrogen, oxygen, and nickel elements. Photoluminescence (PL) spectra of Zn{sub 3}N{sub 2} microtips show a sharp infrared band-to-band emission peak at 1.34?eV with a full width at half maximum of ?100?meV and a very broad oxygen-related defect band emission peak centered at ?0.85?eV.

Wei, Pai-Chun, E-mail: pcwei68@gmail.com, E-mail: tsengcm@phys.sinica.edu.tw; Chang, Chung-Chieh; Hsu, Chia-Hao [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Tong, Shih-Chang; Shen, Ji-Lin [Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Tseng, Chuan-Ming, E-mail: pcwei68@gmail.com, E-mail: tsengcm@phys.sinica.edu.tw [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Institute of Materials Science and Engineering, National Central University, Tao-Yuan 32001, Taiwan (China)

2014-10-14T23:59:59.000Z

195

Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition  

SciTech Connect (OSTI)

Graphene growth from a propane flow in a hydrogen environment (propane-hydrogen chemical vapor deposition (CVD)) on SiC differentiates from other growth methods in that it offers the possibility to obtain various graphene structures on the Si-face depending on growth conditions. The different structures include the (6{radical}3 Multiplication-Sign 6{radical}3)-R30 Degree-Sign reconstruction of the graphene/SiC interface, which is commonly observed on the Si-face, but also the rotational disorder which is generally observed on the C-face. In this work, growth mechanisms leading to the formation of the different structures are studied and discussed. For that purpose, we have grown graphene on SiC(0001) (Si-face) using propane-hydrogen CVD at various pressure and temperature and studied these samples extensively by means of low energy electron diffraction and atomic force microscopy. Pressure and temperature conditions leading to the formation of the different structures are identified and plotted in a pressure-temperature diagram. This diagram, together with other characterizations (X-ray photoemission and scanning tunneling microscopy), is the basis of further discussions on the carbon supply mechanisms and on the kinetics effects. The entire work underlines the important role of hydrogen during growth and its effects on the final graphene structure.

Michon, A.; Vezian, S.; Roudon, E.; Lefebvre, D.; Portail, M. [CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne (France)] [CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne (France); Zielinski, M.; Chassagne, T. [NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)] [NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)

2013-05-28T23:59:59.000Z

196

Gas-phase transport of WF6 through annular nanopipes in TiN during chemical vapor deposition of W on TiN/Ti/SiO2 structures for integrated  

E-Print Network [OSTI]

Gas-phase transport of WF6 through annular nanopipes in TiN during chemical vapor deposition of W through the 106-nm-thick TiN film. W piles up at the TiN/Ti interface, while F rapidly saturates the TiN-sectional and scanning transmission electron microscopy analyses demonstrate that WF6 penetrates into the TiN layer

Allen, Leslie H.

197

SPIN (Version 3. 83): A Fortran program for modeling one-dimensional rotating-disk/stagnation-flow chemical vapor deposition reactors  

SciTech Connect (OSTI)

In rotating-disk reactor a heated substrate spins (at typical speeds of 1000 rpm or more) in an enclosure through which the reactants flow. The rotating disk geometry has the important property that in certain operating regimes{sup 1} the species and temperature gradients normal to the disk are equal everywhere on the disk. Thus, such a configuration has great potential for highly uniform chemical vapor deposition (CVD),{sup 2--5} and indeed commercial rotating-disk CVD reactors are now available. In certain operating regimes, the equations describing the complex three-dimensional spiral fluid motion can be solved by a separation-of-variables transformation{sup 5,6} that reduces the equations to a system of ordinary differential equations. Strictly speaking, the transformation is only valid for an unconfined infinite-radius disk and buoyancy-free flow. Furthermore, only some boundary conditions are consistent with the transformation (e.g., temperature, gas-phase composition, and approach velocity all specified to be independent of radius at some distances above the disk). Fortunately, however, the transformed equations will provide a very good practical approximation to the flow in a finite-radius reactor over a large fraction of the disk (up to {approximately}90% of the disk radius) when the reactor operating parameters are properly chosen, i.e, high rotation rates. In the limit of zero rotation rate, the rotating disk flow reduces to a stagnation-point flow, for which a similar separation-of-variables transformation is also available. Such flow configurations ( pedestal reactors'') also find use in CVD reactors. In this report we describe a model formulation and mathematical analysis of rotating-disk and stagnation-point CVD reactors. Then we apply the analysis to a compute code called SPIN and describe its implementation and use. 31 refs., 4 figs.

Coltrin, M.E. (Sandia National Labs., Albuquerque, NM (United States)); Kee, R.J.; Evans, G.H.; Meeks, E.; Rupley, F.M.; Grcar, J.F. (Sandia National Labs., Livermore, CA (United States))

1991-08-01T23:59:59.000Z

198

Ion beam assisted deposition of thermal barrier coatings  

DOE Patents [OSTI]

Methods and apparatus for depositing thermal barrier coatings on gas turbine blades and vanes using Electron Beam Physical Vapor Deposition (EBPVD) combined with Ion Beam Assisted Deposition (IBAD).

Youchison, Dennis L. (Albuquerque, NM); McDonald, Jimmie M. (Albuquerque, NM); Lutz, Thomas J. (Albuquerque, NM); Gallis, Michail A. (Albuquerque, NM)

2010-11-23T23:59:59.000Z

199

Characterization of photoluminescent (Y{sub 1{minus}x}Eu{sub x}){sub 2}O{sub 3} thin-films prepared by metallorganic chemical vapor deposition  

SciTech Connect (OSTI)

Europium doped yttrium oxide, (Y{sub 1{minus}x}Eu{sub x}){sub 2}O{sub 3}, thin-films were deposited on silicon and sapphire substrates by metallorganic chemical vapor deposition (MOCVD). The films were grown in a MOCVD chamber reacting yttrium and europium tris(2,2,6,6-tetramethyl-3,5,-heptanedionates) precursors in an oxygen atmosphere at low pressures (5 Torr) and low substrate temperatures (500--700 C). The films deposited at 500 C were flat and composed of nanocrystalline regions of cubic Y{sub 2}O{sub 3}, grown in a textured [100] or [110] orientation to the substrate surface. Films deposited at 600 C developed from the flat, nanocrystalline morphology into a plate-like growth morphology oriented in the [111] with increasing deposition time. Monoclinic Y{sub 2}O{sub 3}:Eu{sup 3+} was observed in x-ray diffraction for deposition temperatures {ge}600 C on both (111) Si and (001) sapphire substrates. This was also confirmed by the photoluminescent emission spectra.

McKittrick, J.; Bacalski, C.F.; Hirata, G.A. [Univ. of California, San Diego, La Jolla, CA (United States); Hubbard, K.M.; Pattillo, S.G.; Salazar, K.V.; Trkula, M. [Los Alamos National Lab., NM (United States). Materials Science and Technology Div.

1998-12-01T23:59:59.000Z

200

In-situ deposition of high-k dielectrics on III-V compound semiconductor in MOCVD system  

E-Print Network [OSTI]

In situ deposition of high-k materials to passivate the GaAs in metal organic chemical vapor deposition (MOCVD) system was well demonstrated. Both atomic layer deposition (ALD) and chemical vapor deposition (CVD) methods ...

Cheng, Cheng-Wei, Ph.D. Massachusetts Institute of Technology

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Organic-vapor-liquid-solid deposition with an impinging gas jet Daniel W. Shaw, Kevin Bufkin, Alexandr A. Baronov, Brad L. Johnson, and David L. Patrick  

E-Print Network [OSTI]

and David L. Patrick1,a) 1 Department of Chemistry, Western Washington University, 516 High St., Bellingham tetracene were deposited by sublimation into a flow of argon carrier gas directed at an indium

Patrick, David L.

202

Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from SiH4 and N2O  

E-Print Network [OSTI]

SiO2 film. An optimal process window had been previously identified at a total pressure of 5 Torr, but also quantitative metrology for the film deposition process. © 1999 American Vacuum Society. S0734-211X the wafer. Radiative heating of the wafer was achieved through a quartz window by an array of halogen lamps

Rubloff, Gary W.

203

Measurement and modeling of Ar/H2/CH4 arc jet discharge chemical vapor deposition reactors II: Modeling of the spatial dependence of expanded  

E-Print Network [OSTI]

and used to deposit thin films of polycrystalline diamond. This reactor has been the subject of many prior of micro- and nanocrystalline diamond and diamondlike carbon films. The model incorporates gas activation-containing radical species incident on the growing diamond surface C atoms and CH radicals within this reactor

Bristol, University of

204

Real-time process sensing and metrology in amorphous and selective area silicon plasma enhanced chemical vapor deposition using in situ  

E-Print Network [OSTI]

Real-time process sensing and metrology in amorphous and selective area silicon plasma enhanced Materials Processing, North Carolina State University, Raleigh, North Carolina 27695 Received 11 July 1996 silicon deposition. The ability of mass spectrometry to observe process faults in real time is also

Rubloff, Gary W.

205

Photoinitiated chemical vapor depostion [sic] : mechanism and applications  

E-Print Network [OSTI]

Photoinitiated chemical vapor deposition (piCVD) is developed as a simple, solventless, and rapid method for the deposition of swellable hydrogels and functional hydrogel copolymers. Mechanistic experiments show that piCVD ...

Baxamusa, Salmaan Husain

2009-01-01T23:59:59.000Z

206

E-Print Network 3.0 - atmospheric plasma deposition Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

plasma enhanced chemical vapor deposition CVD . Both processes gave films... and optoelectronics.3 Recently, the low temperature 400 C atmospheric pressure chemical vapor...

207

Precision replenishable grinding tool and manufacturing process  

DOE Patents [OSTI]

A reusable grinding tool consisting of a replaceable single layer of abrasive particles intimately bonded to a precisely configured tool substrate, and a process for manufacturing the grinding tool. The tool substrate may be ceramic or metal and the abrasive particles are preferably diamond, but may be cubic boron nitride. The manufacturing process involves: coating a configured tool substrate with layers of metals, such as titanium, copper and titanium, by physical vapor deposition (PVD); applying the abrasive particles to the coated surface by a slurry technique; and brazing the abrasive particles to the tool substrate by alloying the metal layers. The precision control of the composition and thickness of the metal layers enables the bonding of a single layer or several layers of micron size abrasive particles to the tool surface. By the incorporation of an easily dissolved metal layer in the composition such allows the removal and replacement of the abrasive particles, thereby providing a process for replenishing a precisely machined grinding tool with fine abrasive particles, thus greatly reducing costs as compared to replacing expensive grinding tools.

Makowiecki, Daniel M. (Livermore, CA); Kerns, John A. (Livermore, CA); Blaedel, Kenneth L. (Livermore, CA); Colella, Nicholas J. (Livermore, CA); Davis, Pete J. (Pleasanton, CA); Juntz, Robert S. (Hayward, CA)

1998-01-01T23:59:59.000Z

208

Precision replenishable grinding tool and manufacturing process  

DOE Patents [OSTI]

A reusable grinding tool consisting of a replaceable single layer of abrasive particles intimately bonded to a precisely configured tool substrate, and a process for manufacturing the grinding tool are disclosed. The tool substrate may be ceramic or metal and the abrasive particles are preferably diamond, but may be cubic boron nitride. The manufacturing process involves: coating a configured tool substrate with layers of metals, such as titanium, copper and titanium, by physical vapor deposition (PVD); applying the abrasive particles to the coated surface by a slurry technique; and brazing the abrasive particles to the tool substrate by alloying the metal layers. The precision control of the composition and thickness of the metal layers enables the bonding of a single layer or several layers of micron size abrasive particles to the tool surface. By the incorporation of an easily dissolved metal layer in the composition such allows the removal and replacement of the abrasive particles, thereby providing a process for replenishing a precisely machined grinding tool with fine abrasive particles, thus greatly reducing costs as compared to replacing expensive grinding tools. 11 figs.

Makowiecki, D.M.; Kerns, J.A.; Blaedel, K.L.; Colella, N.J.; Davis, P.J.; Juntz, R.S.

1998-06-09T23:59:59.000Z

209

E-Print Network 3.0 - arc deposition technology Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

role in the Summary: deposition 2 and filtered cathodic vacuum arc 3.such as optical window coatings, scratch resistive... by different types of vapor deposition...

210

E-Print Network 3.0 - asssited chemical vapor Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

nitride, chemical vapor ... Source: Dandy, David - Department of Chemical Engineering, Colorado State University Collection: Materials Science 14 DEPOSITION OF ELECTRON BEAM...

211

E-Print Network 3.0 - all-hot-wire chemical vapor Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

nitride, chemical vapor ... Source: Dandy, David - Department of Chemical Engineering, Colorado State University Collection: Materials Science 10 DEPOSITION OF ELECTRON BEAM...

212

Sandia National Laboratories: chemical vapor deposition  

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213

atmospheric dry deposition: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

water vapor, and we confirm such predictions in a numerical model. There have been a number 38 Dual nitrate isotopes in dry deposition: Utility for partitioning NOx source...

214

Structures and Energetics of Some Potential Intermediates in Titanium Nitride Chemical Vapor Deposition: TiClm(NH2)n, TiClm(NH2)nNH, and TiClm(NH2)nN. An ab Initio  

E-Print Network [OSTI]

Structures and Energetics of Some Potential Intermediates in Titanium Nitride Chemical Vapor with these basis sets augmented by multiple sets of polarization and diffuse functions using the B3LYP optimized geometries. Bond dissociation energies, heats of atomization, heats of formation, and entropies have been

Schlegel, H. Bernhard

215

Vapor spill monitoring method  

DOE Patents [OSTI]

Method for continuous sampling of liquified natural gas effluent from a spill pipe, vaporizing the cold liquified natural gas, and feeding the vaporized gas into an infrared detector to measure the gas composition. The apparatus utilizes a probe having an inner channel for receiving samples of liquified natural gas and a surrounding water jacket through which warm water is flowed to flash vaporize the liquified natural gas.

Bianchini, Gregory M. (Livermore, CA); McRae, Thomas G. (Livermore, CA)

1985-01-01T23:59:59.000Z

216

Microwave plasma assisted supersonic gas jet deposition of thin film materials  

DOE Patents [OSTI]

An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

Schmitt, III, Jerome J. (New Haven, CT); Halpern, Bret L. (Bethany, CT)

1993-01-01T23:59:59.000Z

217

Gasoline vapor recovery  

SciTech Connect (OSTI)

In a gasoline distribution network wherein gasoline is drawn from a gasoline storage tank and pumped into individual vehicles and wherein the gasoline storage tank is refilled periodically from a gasoline tanker truck, a method of recovering liquid gasoline from gasoline vapor that collects in the headspace of the gasoline storage tank as the liquid gasoline is drawn therefrom, said method comprising the steps of: (a) providing a source of inert gas; (b) introducing inert gas into the gasoline storage tank as liquid gasoline is drawn therefrom so that liquid gasoline drawn from the tank is displaced by inert gas and gasoline vapor mixes with the inert gas in the headspace of the tank; (c) collecting the inert gas/gasoline vapor mixture from the headspace of the gasoline storage tank as the tank is refilled from a gasoline tanker truck; (d) cooling the inert gas/gasoline vapor mixture to a temperature sufficient to condense the gasoline vapor in the mixture to liquid gasoline but not sufficient to liquify the inert gas in the mixture; (e) separating the condensed liquid gasoline from the inert gas; and delivering the condensed liquid gasoline to a remote location for subsequent use.

Lievens, G.; Tiberi, T.P.

1993-06-22T23:59:59.000Z

218

Evaporation monitoring and composition control of alloy systems with widely differing vapor pressures  

SciTech Connect (OSTI)

Lawrence Livermore National Laboratory is developing sensors and controls to improve and extend electron beam materials processing technology to alloy systems with constituents of widely varying vapor pressure. The approach under development involves using tunable lasers to measure the density and composition of the vapor plume. A laser based vaporizer control system for vaporization of a uranium-iron alloy has been previously demonstrated in multi-hundred hour, high rate vaporization experiments at LLNL. This paper reviews the design and performance of the uranium vaporization sensor and control system and discusses the extension of the technology to monitoring of uranium vaporization. Data is presented from an experiment in which titanium wire was fed into a molten niobium pool. Laser data is compared to deposited film composition and film cross sections. Finally, the potential for using this technique for composition control in melting applications is discussed.

Anklam, T.M.; Berzins, L.V.; Braun, D.G.; Haynam, C.; McClelland, M.A.; Meier, T.

1994-10-01T23:59:59.000Z

219

Evaporation monitoring and composition control of alloy systems with widely differing vapor pressures  

SciTech Connect (OSTI)

Lawrence Livermore National Laboratory is developing sensors and controls to improve and extend electron beam materials processing technology to alloy systems with constituents of widely varying vapor pressure. The approach under development involves using tunable lasers to measure the density and composition of the vapor plume. A laser based vaporizer control system for vaporization of a uranium-iron alloy has been previously demonstrated in multi-hundred hour, high rate vaporization experiments at LLNL. This paper reviews the design and performance of the uranium vaporization sensor and control system and discusses the extension of the technology to monitoring of titanium vaporization. Data is presented from an experiment in which titanium wire was fed into a molten niobium pool. Laser data is compared to deposited film composition and film cross sections. Finally, the potential for using this technique for composition control in melting applications is discussed.

Anklam, T.M.; Berzins, L.V.; Braun, D.G.; Haynam, C.; McClelland, M.A.; Meier, T. [Lawrence Livermore National Lab., CA (United States)

1994-12-31T23:59:59.000Z

220

Electrolyte vapor condenser  

DOE Patents [OSTI]

A system is disclosed for removing electrolyte from a fuel cell gas stream. The gas stream containing electrolyte vapor is supercooled utilizing conventional heat exchangers and the thus supercooled gas stream is passed over high surface area passive condensers. The condensed electrolyte is then drained from the condenser and the remainder of the gas stream passed on. The system is particularly useful for electrolytes such as phosphoric acid and molten carbonate, but can be used for other electrolyte cells and simple vapor separation as well. 3 figs.

Sederquist, R.A.; Szydlowski, D.F.; Sawyer, R.D.

1983-02-08T23:59:59.000Z

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Electrolyte vapor condenser  

DOE Patents [OSTI]

A system is disclosed for removing electrolyte from a fuel cell gas stream. The gas stream containing electrolyte vapor is supercooled utilizing conventional heat exchangers and the thus supercooled gas stream is passed over high surface area passive condensers. The condensed electrolyte is then drained from the condenser and the remainder of the gas stream passed on. The system is particularly useful for electrolytes such as phosphoric acid and molten carbonate, but can be used for other electrolyte cells and simple vapor separation as well.

Sederquist, Richard A. (Newington, CT); Szydlowski, Donald F. (East Hartford, CT); Sawyer, Richard D. (Canton, CT)

1983-01-01T23:59:59.000Z

222

Vacuum arc deposition devices  

SciTech Connect (OSTI)

The vacuum arc is a high-current, low-voltage electrical discharge which produces a plasma consisting of vaporized and ionized electrode material. In the most common cathodic arc deposition systems, the arc concentrates at minute cathode spots on the cathode surface and the plasma is emitted as a hypersonic jet, with some degree of contamination by molten droplets [known as macroparticles (MPs)] of the cathode material. In vacuum arc deposition systems, the location and motion of the cathode spots are confined to desired surfaces by an applied magnetic field and shields around undesired surfaces. Substrates are mounted on a holder so that they intercept some portion of the plasma jet. The substrate often provides for negative bias to control the energy of depositing ions and heating or cooling to control the substrate temperature. In some systems, a magnetic field is used to guide the plasma around an obstacle which blocks the MPs. These elements are integrated with a deposition chamber, cooling, vacuum gauges and pumps, and power supplies to produce a vacuum arc deposition system.

Boxman, R.L.; Zhitomirsky, V.N. [Electrical Discharge and Plasma Laboratory, Faculty of Engineering, Tel Aviv University, P.O. Box 39040, Tel Aviv 69978 (Israel)

2006-02-15T23:59:59.000Z

223

Organic vapor jet printing system  

DOE Patents [OSTI]

An organic vapor jet printing system includes a pump for increasing the pressure of an organic flux.

Forrest, Stephen R

2012-10-23T23:59:59.000Z

224

Enthalpies of Vaporization and Vapor Pressures of Some Deuterated Hydrocarbons. Liquid-Vapor Pressure Isotope Effects  

E-Print Network [OSTI]

* Department of Chemistry and Biochemistry, University of MissourisSt. Louis, St. Louis, Missouri 63121 Liquid vapor pressure isotope effects have generally been observed, pD > pH.12 Vapor pressure and sublimation

Chickos, James S.

225

Method for deposition of a conductor in integrated circuits  

DOE Patents [OSTI]

A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten. 2 figs.

Creighton, J.R.; Dominguez, F.; Johnson, A.W.; Omstead, T.R.

1997-09-02T23:59:59.000Z

226

Method for deposition of a conductor in integrated circuits  

DOE Patents [OSTI]

A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten.

Creighton, J. Randall (Albuquerque, NM); Dominguez, Frank (Albuquerque, NM); Johnson, A. Wayne (Albuquerque, NM); Omstead, Thomas R. (Albuquerque, NM)

1997-01-01T23:59:59.000Z

227

Stratified vapor generator  

DOE Patents [OSTI]

A stratified vapor generator (110) comprises a first heating section (H.sub.1) and a second heating section (H.sub.2). The first and second heating sections (H.sub.1, H.sub.2) are arranged so that the inlet of the second heating section (H.sub.2) is operatively associated with the outlet of the first heating section (H.sub.1). A moisture separator (126) having a vapor outlet (164) and a liquid outlet (144) is operatively associated with the outlet (124) of the second heating section (H.sub.2). A cooling section (C.sub.1) is operatively associated with the liquid outlet (144) of the moisture separator (126) and includes an outlet that is operatively associated with the inlet of the second heating section (H.sub.2).

Bharathan, Desikan (Lakewood, CO); Hassani, Vahab (Golden, CO)

2008-05-20T23:59:59.000Z

228

ARM - Water Vapor  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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229

VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY COAL TARS  

SciTech Connect (OSTI)

This project had as its main focus the determination of vapor pressures of coal pyrolysis tars. It involved performing measurements of these vapor pressures and from them, developing vapor pressure correlations suitable for use in advanced pyrolysis models (those models which explicitly account for mass transport limitations). This report is divided into five main chapters. Each chapter is a relatively stand-alone section. Chapter A reviews the general nature of coal tars and gives a summary of existing vapor pressure correlations for coal tars and model compounds. Chapter B summarizes the main experimental approaches for coal tar preparation and characterization which have been used throughout the project. Chapter C is concerned with the selection of the model compounds for coal pyrolysis tars and reviews the data available to us on the vapor pressures of high boiling point aromatic compounds. This chapter also deals with the question of identifying factors that govern the vapor pressures of coal tar model materials and their mixtures. Chapter D covers the vapor pressures and heats of vaporization of primary cellulose tars. Chapter E discusses the results of the main focus of this study. In summary, this work provides improved understanding of the volatility of coal and cellulose pyrolysis tars. It has resulted in new experimentally verified vapor pressure correlations for use in pyrolysis models. Further research on this topic should aim at developing general vapor pressure correlations for all coal tars, based on their molecular weight together with certain specific chemical characteristics i.e. hydroxyl group content.

Eric M. Suuberg; Vahur Oja

1997-07-01T23:59:59.000Z

230

ENHANCED GROWTH RATE AND SILANE UTILIZATION IN AMORPHOUS SILICON AND NANOCRYSTALLINE-SILICON SOLAR CELL DEPOSITION VIA GAS PHASE ADDITIVES  

SciTech Connect (OSTI)

Air Products set out to investigate the impact of additives on the deposition rate of both ���µCSi and ���±Si-H films. One criterion for additives was that they could be used in conventional PECVD processing, which would require sufficient vapor pressure to deliver material to the process chamber at the required flow rates. The flow rate required would depend on the size of the substrate onto which silicon films were being deposited, potentially ranging from 200 mm diameter wafers to the 5.7 m2 glass substrates used in GEN 8.5 flat-panel display tools. In choosing higher-order silanes, both disilane and trisilane had sufficient vapor pressure to withdraw gas at the required flow rates of up to 120 sccm. This report presents results obtained from testing at Air Products�¢���� electronic technology laboratories, located in Allentown, PA, which focused on developing processes on a commercial IC reactor using silane and mixtures of silane plus additives. These processes were deployed to compare deposition rates and film properties with and without additives, with a goal of maximizing the deposition rate while maintaining or improving film properties.

Ridgeway, R.G.; Hegedus, S.S.; Podraza, N.J.

2012-08-31T23:59:59.000Z

231

Robust Numerical Simulation of Porosity Evolution in Chemical Vapor In ltration II: Two Dimensional  

E-Print Network [OSTI]

-solid reactions with solid deposition are exempli#12;ed by the fabrication of ceramic matrix composites through #3) process, during which a matrix of ceramic #12;bers is chemically vapor deposited within a porous preform practical approach to fabricate ceramic composites. Among these composites, #12;ber-reinforced composites

Jin, Shi

232

Variable temperature semiconductor film deposition  

DOE Patents [OSTI]

A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Li, X.; Sheldon, P.

1998-01-27T23:59:59.000Z

233

ARM Water Vapor IOP  

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234

Water Vapor Experiment Concludes  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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235

To estimate vapor pressure easily  

SciTech Connect (OSTI)

Vapor pressures as functions of temperature for approximately 700 major organic chemical compounds are given. The tabulation also gives the temperature range for which the data are applicable. Minimum and maximum temperatures are denoted by TMIN and TMAX. The Antoine equation that correlates vapor pressure as a function of temperature is described. A representative comparison of calculated and actual data values for vapor pressure is shown for ethyl alcohol. The coefficient tabulation is based on both literature (experimental data) and estimated values.

Yaws, C.L.; Yang, H.C. (Lamar Univ., Beaumont, TX (USA))

1989-10-01T23:59:59.000Z

236

Vaporization of zinc from scrap  

SciTech Connect (OSTI)

The rate of zinc vaporization from galvanized scrap was measured using a thermogravimetric apparatus along with chemical analysis. It is found that the rate of zinc vaporization is very fast in nitrogen and carbon monoxide atmospheres at temperatures higher than 950 C. At lower temperature rate decreases with decreasing temperature and is controlled by the gas phase mass transport. The simultaneous oxidation and vaporization of zinc occurs when the samples were heated in carbon dioxide and air. The current experimental results indicate that almost all of the zinc from scrap vaporizes during the heating process in a very short period of time after the temperature reaches above 850 C.

Ozturk, B.; Fruehan, R.J. [Carnegie Mellon Univ., Pittsburgh, PA (United States)

1996-12-31T23:59:59.000Z

237

Vapor spill pipe monitor  

DOE Patents [OSTI]

The invention is a method and apparatus for continually monitoring the composition of liquefied natural gas flowing from a spill pipe during a spill test by continually removing a sample of the LNG by means of a probe, gasifying the LNG in the probe, and sending the vaporized LNG to a remote ir gas detector for analysis. The probe comprises three spaced concentric tubes surrounded by a water jacket which communicates with a flow channel defined between the inner and middle, and middle and outer tubes. The inner tube is connected to a pump for providing suction, and the probe is positioned in the LNG flow below the spill pipe with the tip oriented partly downward so that LNG is continuously drawn into the inner tube through a small orifice. The probe is made of a high thermal conductivity metal. Hot water is flowed through the water jacket and through the flow channel between the three tubes to provide the necessary heat transfer to flash vaporize the LNG passing through the inner channel of the probe. The gasified LNG is transported through a connected hose or tubing extending from the probe to a remote ir sensor which measures the gas composition.

Bianchini, G.M.; McRae, T.G.

1983-06-23T23:59:59.000Z

238

Microwave plasma assisted supersonic gas jet deposition of thin film materials  

DOE Patents [OSTI]

An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.

Schmitt, J.J. III; Halpern, B.L.

1993-10-26T23:59:59.000Z

239

Fuel vapor control device  

SciTech Connect (OSTI)

A fuel vapor control device is described having a valve opening and closing a passage connecting a carburetor and a charcoal canister according to a predetermined temperature. A first coil spring formed by a ''shape memory effect'' alloy is provided to urge the valve to open the passage when the temperature is high. A second coil spring urges the valve to close the passage. A solenoid is provided to urge an armature against the valve to close the passage against the force of the first coil spring when the engine is running. The solenoid heats the first coil spring to generate a spring force therein when the engine is running. When the engine is turned off, the solenoid is deactivated, and the force of the first spring overcomes the force of the second spring to open the passage until such time as the temperature of the first spring drops below the predetermined temperature.

Ota, I.; Nishimura, Y.; Nishio, S.; Yogo, K.

1987-10-20T23:59:59.000Z

240

Vapor etching of nuclear tracks in dielectric materials  

DOE Patents [OSTI]

A process involving vapor etching of nuclear tracks in dielectric materials for creating high aspect ratio (i.e., length much greater than diameter), isolated cylindrical holes in dielectric materials that have been exposed to high-energy atomic particles. The process includes cleaning the surface of the tracked material and exposing the cleaned surface to a vapor of a suitable etchant. Independent control of the temperatures of the vapor and the tracked materials provide the means to vary separately the etch rates for the latent track region and the non-tracked material. As a rule, the tracked regions etch at a greater rate than the non-tracked regions. In addition, the vapor-etched holes can be enlarged and smoothed by subsequent dipping in a liquid etchant. The 20-1000 nm diameter holes resulting from the vapor etching process can be useful as molds for electroplating nanometer-sized filaments, etching gate cavities for deposition of nano-cones, developing high-aspect ratio holes in trackable resists, and as filters for a variety of molecular-sized particles in virtually any liquid or gas by selecting the dielectric material that is compatible with the liquid or gas of interest.

Musket, Ronald G. (Danville, CA); Porter, John D. (Berkeley, CA); Yoshiyama, James M. (Fremont, CA); Contolini, Robert J. (Lake Oswego, OR)

2000-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Micro Chemical Vapor Deposition for the Synthesis of Nanomaterials  

E-Print Network [OSTI]

image in Figure 2.17(c) (FLIR® A320 Camera, the emissivitysame from the IR camera (FLIR® A320) and the thermal couple.thermal cameras (for example, FLIR® systems). However, the

Zhou, Qin

2011-01-01T23:59:59.000Z

242

Air-gap sacrificial materials by initiated chemical vapor deposition  

E-Print Network [OSTI]

P(neopentyl methacrylate-co-ethylene glycol dimethacrylate) copolymer, abbreviated as P(npMAco-EGDA), was selected as the potential air-gap sacrificial material among possible combination of twenty monomers and four ...

Lee, Long Hua

2007-01-01T23:59:59.000Z

243

Vapor-Wall Deposition in Chambers: Theoretical Considerations  

E-Print Network [OSTI]

aerosol size distribution changes continuously as particles grow by condensation and are lost by coagulation

McVay, Renee C; Cappa, Christopher D; Seinfeld, John H

2014-01-01T23:59:59.000Z

244

Vapor deposited samarium zirconate thermal barrier coatings Hengbei Zhao a,  

E-Print Network [OSTI]

Thermal barrier coatings The rare earth zirconates (M2Zr2O7, M=LaGd) have a low intrinsic thermal conductivity and high temperature phase stability making them attractive candidates for thermal barrier coating conditions and the coating composition, structure, texture, pore morphology, and thermal conductivity

Wadley, Haydn

245

Compositional Variations in Vapor Deposited Samarium Zirconate Coatings  

E-Print Network [OSTI]

) and a low thermal conductivity. Zirconia stabilized with 7-8 wt % yttria (7YSZ) is currently the industry 7YSZ, as they possess a low thermal conductivity, have a very high melting point, and are phase of the requirements for the Degree Master of Science (Materials Science and Engineering) by Toni Kember December 2011

Wadley, Haydn

246

Micro Chemical Vapor Deposition for the Synthesis of Nanomaterials  

E-Print Network [OSTI]

Journal of MicroElectroMechanical Systems, vol. 20, pp. 9-Chair MEMS (Microelectromechanical Systems) technologiesby MEMS (Microelectromechanical Systems) technologies many

Zhou, Qin

2011-01-01T23:59:59.000Z

247

Graphene growth with giant domains using chemical vapor deposition  

E-Print Network [OSTI]

N. Martensson, Controlling graphene corrugation on lattice-in patterned epitaxial graphene, Science, 2006, 312(5777), 92009, 4(6), 17 A. K. Geim, Graphene: Status and Prospects,

Yong, Virginia; Hahn, H. Thomas

2011-01-01T23:59:59.000Z

248

Hot-Wire Chemical Vapor Deposition (HWCVD) technologies - Energy Innovation  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFun withconfinement plasmas inPortalAll NERSCResearch CenterPortal

249

Sandia National Laboratories: metal organic chemical vapor deposition  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1developmentturbine bladelifetime is the cumulativeissues

250

Passive vapor extraction feasibility study  

SciTech Connect (OSTI)

Demonstration of a passive vapor extraction remediation system is planned for sites in the 200 West Area used in the past for the disposal of waste liquids containing carbon tetrachloride. The passive vapor extraction units will consist of a 4-in.-diameter pipe, a check valve, a canister filled with granular activated carbon, and a wind turbine. The check valve will prevent inflow of air that otherwise would dilute the soil gas and make its subsequent extraction less efficient. The granular activated carbon is used to adsorb the carbon tetrachloride from the air. The wind turbine enhances extraction rates on windy days. Passive vapor extraction units will be designed and operated to meet all applicable or relevant and appropriate requirements. Based on a cost analysis, passive vapor extraction was found to be a cost-effective method for remediation of soils containing lower concentrations of volatile contaminants. Passive vapor extraction used on wells that average 10-stdft{sup 3}/min air flow rates was found to be more cost effective than active vapor extraction for concentrations below 500 parts per million by volume (ppm) of carbon tetrachloride. For wells that average 5-stdft{sup 3}/min air flow rates, passive vapor extraction is more cost effective below 100 ppm.

Rohay, V.J.

1994-06-30T23:59:59.000Z

251

In situ analysis of ash deposits from black liquor combustion  

SciTech Connect (OSTI)

Aerosols formed during combustion of black liquor cause a significant fire-side fouling problem in pulp mill recovery boilers. The ash deposits reduce heat transfer effectiveness, plug gas passages, and contribute to corrosion. Both vapors and condensation aerosols lead to the formation of such deposits. The high ash content of the fuel and the low dew point of the condensate salts lead to a high aerosol and vapor concentration in most boilers. In situ measurements of the chemical composition of these deposits is an important step in gaining a fundamental understanding of the deposition process. Infrared emission spectroscopy is used to characterize the composition of thin film deposits resulting from the combustion of black liquor and the deposition of submicron aerosols and vapors. New reference spectra of Na{sub 2}SO{sub 4}, K{sub 2}SO{sub 4}, Na{sub 2}CO{sub 3} and K{sub 2}CO{sub 3} pure component films were recorded and compared with the spectra of the black liquor deposit. All of the black liquor emission bands were identified using a combination of literature data and ab initio calculations. Ab initio calculations also predict the locations and intensities of bands for the alkali vapors of interest. 39 refs., 9 figs.

Bernath, P. [Sandia National Labs., Livermore, CA (United States). Combustion Research Facility]|[Univ. of Toronto, Ontario (Canada); Sinquefield, S.A. [Sandia National Labs., Livermore, CA (United States). Combustion Research Facility]|[Oregon State Univ., Eugene, OR (United States); Baxter, L.L.; Sclippa, G.; Rohlfing, C. [Sandia National Labs., Livermore, CA (United States). Combustion Research Facility; Barfield, M. [Sandia National Labs., Livermore, CA (United States). Combustion Research Facility]|[Univ. of Arizona, Tucson, AZ (United States)

1996-05-01T23:59:59.000Z

252

Portable vapor diffusion coefficient meter  

DOE Patents [OSTI]

An apparatus for measuring the effective vapor diffusion coefficient of a test vapor diffusing through a sample of porous media contained within a test chamber. A chemical sensor measures the time-varying concentration of vapor that has diffused a known distance through the porous media. A data processor contained within the apparatus compares the measured sensor data with analytical predictions of the response curve based on the transient diffusion equation using Fick's Law, iterating on the choice of an effective vapor diffusion coefficient until the difference between the predicted and measured curves is minimized. Optionally, a purge fluid can forced through the porous media, permitting the apparatus to also measure a gas-phase permeability. The apparatus can be made lightweight, self-powered, and portable for use in the field.

Ho, Clifford K. (Albuquerque, NM)

2007-06-12T23:59:59.000Z

253

Laser induced thermophoresis and particulate deposition efficiency  

SciTech Connect (OSTI)

The interaction of laser radiation and an absorbing aerosol in a tube flow has been considered. The aerosol is produced by external heating of reactants as in the MCVD (Modified Chemical Vapor Deposition) process to produce submicron size particles in the manufacture of optical fiber preforms. These are subsequently deposited by thermophoretic forces on the inner wall of the tube as they are convected by a Poiseuille velocity profile. Axial laser radiation in the tube interacts with the absorbing particles, and the laser heating of the gas induces additional thermophoretic forces that markedly increase the efficiency of particulate deposition. A particle concentration dependent absorption coefficient that appears in the energy equation couples the energy equation to the equation of particle conservation, so that a non-linear set of coupled partial integrodifferential equations must be solved. Numerical solutions for aerosol particle trajectories, and thus deposition efficiencies, have been obtained. It is shown that laser enhanced thermophoresis markedly improves the deposition efficiency.

Cipolla, J.; Morse, T.F.; Wang, C.Y.

1983-07-01T23:59:59.000Z

254

Tribology Letters Vol. 10, No. 3, 2001 179 Activation of the SiC surface for vapor phase lubrication  

E-Print Network [OSTI]

above 500 C [2,3,11,12]. Since liquid lubricants cannot withstand such extreme conditions, a number deposition 1. Introduction The lubrication of ceramic surfaces working at extremely high temperatures has lubrication by Fe chemical vapor deposition from Fe(CO)5 Daxing Ren, Dougyong Sung and Andrew J. Gellman

Gellman, Andrew J.

255

Development of Lithium Deposition Techniques for TFTR  

SciTech Connect (OSTI)

The ability to increase the quantity of lithium deposition into TFTR beyond that of the Pellet Injector while minimizing perturbations to the plasma provides interesting experimental and operational options. Two additional lithium deposition tools were developed for possible application during the 1996 Experimental Schedule: a solid lithium target probe for real-time deposition, and a lithium effusion oven for deposition between discharges. The lithium effusion oven was operated in TFTR to deposit lithium on the Inner Limiter in the absence of plasma. This resulted in the third highest power TFTR discharge.

Gorman, J.; Johnson, D.; Kugel, H.W.; Labik, G.; Lemunyan, G.; et al

1997-10-01T23:59:59.000Z

256

Development of lithium deposition techniques for TFTR  

SciTech Connect (OSTI)

The ability to increase the quantity of lithium deposition into TFTR beyond that of the Pellet Injector while minimizing perturbations to the plasma provides interesting experimental and operational options. Two additional lithium deposition tools were developed for possible application during the 1996 Experimental Schedule: a solid lithium target probe for real-time deposition, and a lithium effusion oven for deposition between discharges. The lithium effusion oven was operated in TFTR to deposit lithium on the Inner Limiter in the absence of plasma. This resulted in the third highest power TFTR discharge.

Kugel, H.W.; Gorman, J.; Johnson, D.; Labik, G.; Lemunyan, G.; Mansfield, D.; Timberlake, J.; Vocaturo, M.

1997-10-01T23:59:59.000Z

257

Percussion tool  

DOE Patents [OSTI]

A percussion tool is described and which includes a housing mounting a tool bit; a reciprocally moveable hammer borne by the housing and which is operable to repeatedly strike the tool bit; and a reciprocally moveable piston enclosed within the hammer and which imparts reciprocal movement to the reciprocally moveable hammer.

Reed, Teddy R.

2006-11-28T23:59:59.000Z

258

The Vaporization Enthalpies and Vapor Pressures of Some Primary Amines of Pharmaceutical Importance by Correlation Gas  

E-Print Network [OSTI]

by Correlation Gas Chromatography Chase Gobble, Nigam Rath, and James Chickos* Department of Chemistry Information ABSTRACT: Vapor pressures, vaporization, and sublimation enthalpies of several pharmaceuticals and boiling temperatures when available. Sublimation enthalpies and vapor pressures are also evaluated for 1

Chickos, James S.

259

Control of pyrophoricity in deposits produced by electron beam evaporation of uranium  

SciTech Connect (OSTI)

A description is given of an apparatus for reducing the pyrophoricity of deposits of a material evaporated within a chamber comprising: a sealed chamber defined by an enclosure; means for providing within said chamber an atmosphere of generally non-reactive nature; a reservoir of a material to ve evaporated; means for directing a vapor of said material from said reservoir into said chamber; at least one surface within said chamber in the path of the directed vapor and on which at least portions of the vaporized material deposits; means for cooling said enclosure to a temperature at which said vapor deposits at a relatively low pyrophoric density; and means for maintaining a temperature for said collection surfaces higher than the enclosure temperature to promote deposition of said material at a relatively higher density.

Clifford, J.

1980-07-01T23:59:59.000Z

260

Annual report, April 1981 - May 1982 : laser induced deposition of thin films  

E-Print Network [OSTI]

A new chemical vapor deposition (CVD) process has been demonstrated with Si thin films. In this process, reactant gases are heated by absorbing light energy emitted from an IR laser. No other surfaces are heated by the ...

Gattuso, Todd Richard

1982-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

VAPORIZATION THERMODYNAMICS OF KCl. COMBINING VAPOR PRESSURE AND GRAVIMETRIC DATA  

E-Print Network [OSTI]

.B. Department of Chemistry, Moscow State University, Moscow, 119899, Russia Bonnell D.W., Hastie J.W. National temperature chemistry situations, vapor pressures are typically less than 100 kPa. The molar volume is p = 101325 Pa). The subscript trs denotes that the changeisfor a transition, typically sublimation

Rudnyi, Evgenii B.

262

VAPORIZATION OF TUNGSTEN-METAL IN STEAM AT HIGH TEMPERATURES.  

SciTech Connect (OSTI)

The vaporization of tungsten from the APT spallation target dominates the radiological source term for unmitigated target overheating accidents. Chemical reactions of tungsten with steam which persist to tungsten temperatures as low as 800 C result in the formation of a hydrated tungsten-oxide which has a high vapor pressure and is readily convected in a flowing atmosphere. This low-temperature vaporization reaction essentially removes the oxide film that forms on the tungsten-metal surface as soon as it forms, leaving behind a fresh metallic surface for continued oxidation and vaporization. Experiments were conducted to measure the oxidative vaporization rates of tungsten in steam as part of the effort to quantify the MT radiological source term for severe target accidents. Tests were conducted with tungsten rods (1/8 inch diameter, six inches long) heated to temperatures from approximately 700 C to 1350 C in flowing steam which was superheated to 140 C. A total of 19 experiments was conducted. Fifteen tests were conducted by RF induction heating of single tungsten rods held vertical in a quartz glass retort. Four tests were conducted in a vertically-mounted tube furnace for the low temperature range of the test series. The aerosol which was generated and transported downstream from the tungsten rods was collected by passing the discharged steam through a condenser. This procedure insured total collection of the steam along with the aerosol from the vaporization of the rods. The results of these experiments revealed a threshold temperature for tungsten vaporization in steam. For the two tests at the lowest temperatures which were tested, approximately 700 C, the tungsten rods were observed to oxidize without vaporization. The remainder of the tests was conducted over the temperature range of 800 C to 1350 C. In these tests, the rods were found to have lost weight due to vaporization of the tungsten and the missing weight was collected in the downstream condensate system. The aerosol formed a fine white smoke of tungsten-oxide which was visible to the eye as it condensed in the laminar boundary layer of steam which flowed along the surface of the rod. The aerosol continued to flow as a smoke tube downstream of the rod, flowing coaxially along the centerline axis of the quartz glass tube and depositing by impaction along the outside of a bend and at sudden area contractions in the piping. The vaporization rate data from the 17 experiments which exceeded the vaporization threshold temperature are shown in Figure 5 in the form of vaporization rates (g/cm{sup 2} s) vs. inverse temperature (K{sup {minus}1}). Two correlations to the present data are presented and compared to a published correlation by Kilpatrick and Lott. The differences are discussed.

GREENE,G.A.; FINFROCK,C.C.

2000-10-01T23:59:59.000Z

263

Deposition of dopant impurities and pulsed energy drive-in  

DOE Patents [OSTI]

A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

Wickboldt, Paul (Walnut Creek, CA); Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Jose, CA); Ellingboe, Albert R. (Malahide, IE)

2008-01-01T23:59:59.000Z

264

Deposition of dopant impurities and pulsed energy drive-in  

DOE Patents [OSTI]

A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

Wickboldt, Paul (Walnut Creek, CA); Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Ellingboe, Albert R. (Fremont, CA)

1999-01-01T23:59:59.000Z

265

Deposition of dopant impurities and pulsed energy drive-in  

DOE Patents [OSTI]

A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique is disclosed. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques. 2 figs.

Wickboldt, P.; Carey, P.G.; Smith, P.M.; Ellingboe, A.R.

1999-06-29T23:59:59.000Z

266

Source replenishment device for vacuum deposition  

DOE Patents [OSTI]

A material source replenishment device for use with a vacuum deposition apparatus is described. The source replenishment device comprises an intermittent motion producing gear arrangement disposed within the vacuum deposition chamber. An elongated rod having one end operably connected to the gearing arrangement is provided with a multiarmed head at the opposite end disposed adjacent the heating element of the vacuum deposition apparatus. An inverted U-shaped source material element is releasably attached to the outer end of each arm member whereby said multiarmed head is moved to locate a first of said material elements above said heating element, whereupon said multiarmed head is lowered to engage said material element with the heating element and further lowered to release said material element on the heating element. After vaporization of said material element, second and subsequent material elements may be provided to the heating element without the need for opening the vacuum deposition apparatus to the atmosphere.

Hill, R.A.

1986-05-15T23:59:59.000Z

267

Chemical deposition methods using supercritical fluid solutions  

DOE Patents [OSTI]

A method for depositing a film of a desired material on a substrate comprises dissolving at least one reagent in a supercritical fluid comprising at least one solvent. Either the reagent is capable of reacting with or is a precursor of a compound capable of reacting with the solvent to form the desired product, or at least one additional reagent is included in the supercritical solution and is capable of reacting with or is a precursor of a compound capable of reacting with the first reagent or with a compound derived from the first reagent to form the desired material. The supercritical solution is expanded to produce a vapor or aerosol and a chemical reaction is induced in the vapor or aerosol so that a film of the desired material resulting from the chemical reaction is deposited on the substrate surface. In an alternate embodiment, the supercritical solution containing at least one reagent is expanded to produce a vapor or aerosol which is then mixed with a gas containing at least one additional reagent. A chemical reaction is induced in the resulting mixture so that a film of the desired material is deposited.

Sievers, Robert E. (Boulder, CO); Hansen, Brian N. (Boulder, CO)

1990-01-01T23:59:59.000Z

268

Hydrogen Cars and Water Vapor  

E-Print Network [OSTI]

misidentified as "zero-emissions vehicles." Fuel cell vehicles emit water vapor. A global fleet could have, with discernible effects on people and ecosystems. The broad environmental effects of fuel cell vehicles. This cycle is currently under way with hydrogen fuel cells. As fuel cell cars are suggested as a solution

Colorado at Boulder, University of

269

Vapor phase modifiers for oxidative coupling  

DOE Patents [OSTI]

Volatilized metal compounds retard vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

Warren, Barbara K. (Charleston, WV)

1991-01-01T23:59:59.000Z

270

Vapor explosion in the RIA-ST-4 experiment. [BWR  

SciTech Connect (OSTI)

A concern in assuring the safety of commercial light water reactors (LWRs) is whether core overheating, during which molten fuel is produced, can lead to massive vaporization of the coolant and shock pressurization of the system due to an energetic molten fuel-coolant interaction (MFCI). The RIA-ST-4 experiment was one of four scoping tests in the Reactivity Initiated Accident (RIA) Test Series which is being conducted in the Power Burst Facility (PBF) to define an energy deposition failure threshold and to determine modes and consequences of fuel rod failure during a postulated boiling water reactor (BWR) control rod drop accident.

El-Genk, M.S.

1980-01-01T23:59:59.000Z

271

Molybdenum enhanced low-temperature deposition of crystalline silicon nitride  

DOE Patents [OSTI]

A process for chemical vapor deposition of crystalline silicon nitride is described which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide. 5 figures.

Lowden, R.A.

1994-04-05T23:59:59.000Z

272

TULSA UNIVERSITY PARAFFIN DEPOSITION PROJECTS  

SciTech Connect (OSTI)

As oil and gas production moves to deeper and colder water, subsea multiphase production systems become critical for economic feasibility. It will also become increasingly imperative to adequately identify the conditions for paraffin precipitation and predict paraffin deposition rates to optimize the design and operation of these multiphase production systems. Although several oil companies have paraffin deposition predictive capabilities for single-phase oil flow, these predictive capabilities are not suitable for the multiphase flow conditions encountered in most flowlines and wellbores. For deepwater applications in the Gulf of Mexico, it is likely that multiphase production streams consisting of crude oil, produced water and gas will be transported in a single multiphase pipeline to minimize capital cost and complexity at the mudline. Existing single-phase (crude oil) paraffin deposition predictive tools are clearly inadequate to accurately design these pipelines because they do not account for the second and third phases, namely, produced water and gas. The objective of this program is to utilize the current test facilities at The University of Tulsa, as well as member company expertise, to accomplish the following: enhance our understanding of paraffin deposition in single and two-phase (gas-oil) flows; conduct focused experiments to better understand various aspects of deposition physics; and, utilize knowledge gained from experimental modeling studies to enhance the computer programs developed in the previous JIP for predicting paraffin deposition in single and two-phase flow environments. These refined computer models will then be tested against field data from member company pipelines. The following deliverables are scheduled during the first three projects of the program: (1) Single-Phase Studies, with three different black oils, which will yield an enhanced computer code for predicting paraffin deposition in deepwater and surface pipelines. (2) Two-Phase Studies, with a focus on heat transfer and paraffin deposition at various pipe inclinations, which will be used to enhance the paraffin deposition code for gas-liquid flow in pipes. (3) Deposition Physics and Water Impact Studies, which will address the aging process, improve our ability to characterize paraffin deposits and enhance our understanding of the role water plays in paraffin deposition in deepwater pipelines. As in the previous two studies, knowledge gained in this suite of studies will be integrated into a state-of-the-art three-phase paraffin deposition computer program.

Michael Volk; Cem Sarica

2003-10-01T23:59:59.000Z

273

Vapor canister heater for evaporative emissions systems  

SciTech Connect (OSTI)

Automotive evaporative emissions systems use a charcoal canister to store evaporative hydrocarobn emissions. These stored vapors are later purged and burned during engine operation. Under certain conditions the engine cannot completely purge the canister of the stored fuel vapors, which results in a decreased vapor storage capacity in the canister. A self-regulating PTC (Positive Temperature Coefficient) heater has been developed to warm the purge air as it enters the canister, in order to provide thermal energy for increased release of the vapors from charcoal sites. This paper describes the construction and operation of the vapor canister heater as it relates to improved evaporative emission system performance.

Bishop, R.P.; Berg, P.G.

1987-01-01T23:59:59.000Z

274

Workflow Tools  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

at NERSC go here. Galaxy - Galaxy is a web based workflow tool that is use by the genomics community. It allows you to define job dependencies via a web based workflow engine....

275

Queer Tools  

E-Print Network [OSTI]

Broadcast Transcript: Chindogu. Did someone say "Bless you?" No need. This is a Japanese word that means "queer tools" and it was coined to describe the Japanese penchant for unusual inventions. From toilet paper rolls that attach to the head...

Hacker, Randi; Tsutsui, William

2007-11-19T23:59:59.000Z

276

Ambipolar silicon nanowire FETs with stenciled-deposited metal gate Davide Sacchetto  

E-Print Network [OSTI]

Ambipolar silicon nanowire FETs with stenciled-deposited metal gate Davide Sacchetto , Veronica Keywords: Schottky barrier Ambipolarity Si nanowire Stencil lithography FET Silicide a b s t r a c t We chemical vapor deposition (LPCVD) of amorphous Si (a-Si) and SiO2 layers as well as metal gate patterning

De Micheli, Giovanni

277

Atomic absorption monitor for deposition process control of aluminum at 394 nm using frequency-doubled diode laser  

E-Print Network [OSTI]

Atomic absorption monitor for deposition process control of aluminum at 394 nm using frequency November 1995 A monitor for Al vapor density based on atomic absorption AA using a frequency of atomic absorption AA as a monitor for thickness and composition control in physical vapor deposi- tion

Fejer, Martin M.

278

Hybrid deposition of thin film solid oxide fuel cells and electrolyzers  

DOE Patents [OSTI]

The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated. 8 figs.

Jankowski, A.F.; Makowiecki, D.M.; Rambach, G.D.; Randich, E.

1998-05-19T23:59:59.000Z

279

Control of flow through a vapor generator  

DOE Patents [OSTI]

In a Rankine cycle system wherein a vapor generator receives heat from exhaust gases, provision is made to avoid overheating of the refrigerant during ORC system shut down while at the same time preventing condensation of those gases within the vapor generator when its temperature drops below a threshold temperature by diverting the flow of hot gases to ambient and to thereby draw ambient air through the vapor generator in the process. In one embodiment, a bistable ejector is adjustable between one position, in which the hot gases flow through the vapor generator, to another position wherein the gases are diverted away from the vapor generator. Another embodiment provides for a fixed valve ejector with a bias towards discharging to ambient, but with a fan on the downstream side of said vapor generator for overcoming this bias.

Radcliff, Thomas D.

2005-11-08T23:59:59.000Z

280

Wick for metal vapor laser  

DOE Patents [OSTI]

An improved wick for a metal vapor laser is made of a refractory metal cylinder, preferably molybdenum or tungsten for a copper laser, which provides the wicking surface. Alternately, the inside surface of the ceramic laser tube can be metalized to form the wicking surface. Capillary action is enhanced by using wire screen, porous foam metal, or grooved surfaces. Graphite or carbon, in the form of chunks, strips, fibers or particles, is placed on the inside surface of the wick to reduce water, reduce metal oxides and form metal carbides.

Duncan, David B. (Livermore, CA)

1992-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Overview of chemical vapor infiltration  

SciTech Connect (OSTI)

Chemical vapor infiltration (CVI) is developing into a commercially important method for the fabrication of continuous filament ceramic composites. Current efforts are focused on the development of an improved understanding of the various processes in CVI and its modeling. New approaches to CVI are being explored, including pressure pulse infiltration and microwave heating. Material development is also proceeding with emphasis on improving the oxidation resistance of the interfacial layer between the fiber and matrix. This paper briefly reviews these subjects, indicating the current state of the science and technology.

Besmann, T.M.; Stinton, D.P.; Lowden, R.A.

1993-06-01T23:59:59.000Z

282

Vapor phase modifiers for oxidative coupling  

DOE Patents [OSTI]

Volatilized metal compounds are described which are capable of retarding vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

Warren, B.K.

1991-12-17T23:59:59.000Z

283

Near real time vapor detection and enhancement using aerosol adsorption  

SciTech Connect (OSTI)

A vapor sample detection method where the vapor sample contains vapor and ambient air and surrounding natural background particles. The vapor sample detection method includes the steps of generating a supply of aerosol that have a particular effective median particle size, mixing the aerosol with the vapor sample forming aerosol and adsorbed vapor suspended in an air stream, impacting the suspended aerosol and adsorbed vapor upon a reflecting element, alternatively directing infrared light to the impacted aerosol and adsorbed vapor, detecting and analyzing the alternatively directed infrared light in essentially real time using a spectrometer and a microcomputer and identifying the vapor sample.

Novick, Vincent J.; Johnson, Stanley A.

1997-12-01T23:59:59.000Z

284

Near real time vapor detection and enhancement using aerosol adsorption  

DOE Patents [OSTI]

A vapor sample detection method is described where the vapor sample contains vapor and ambient air and surrounding natural background particles. The vapor sample detection method includes the steps of generating a supply of aerosol that have a particular effective median particle size, mixing the aerosol with the vapor sample forming aerosol and adsorbed vapor suspended in an air stream, impacting the suspended aerosol and adsorbed vapor upon a reflecting element, alternatively directing infrared light to the impacted aerosol and adsorbed vapor, detecting and analyzing the alternatively directed infrared light in essentially real time using a spectrometer and a microcomputer and identifying the vapor sample. 13 figs.

Novick, V.J.; Johnson, S.A.

1999-08-03T23:59:59.000Z

285

Near real time vapor detection and enhancement using aerosol adsorption  

DOE Patents [OSTI]

A vapor sample detection method where the vapor sample contains vapor and ambient air and surrounding natural background particles. The vapor sample detection method includes the steps of generating a supply of aerosol that have a particular effective median particle size, mixing the aerosol with the vapor sample forming aerosol and adsorbed vapor suspended in an air stream, impacting the suspended aerosol and adsorbed vapor upon a reflecting element, alternatively directing infrared light to the impacted aerosol and adsorbed vapor, detecting and analyzing the alternatively directed infrared light in essentially real time using a spectrometer and a microcomputer and identifying the vapor sample.

Novick, Vincent J. (Downers Grove, IL); Johnson, Stanley A. (Countryside, IL)

1999-01-01T23:59:59.000Z

286

Tropospheric water vapor and climate sensitivity  

SciTech Connect (OSTI)

Estimates are made of the effect of changes in tropospheric water vapor on the climate sensitivity to doubled carbon dioxide (CO{sub 2}) using a coarse resolution atmospheric general circulation model coupled to a slab mixed layer ocean. The sensitivity of the model to doubled CO{sub 2} is found as the difference between the equilibrium responses for control and doubled CO{sub 2} cases. Clouds are specified to isolate the water vapor feedback. Experiments in which the water vapor distribution is specified rather than internally calculated are used to find the contribution of water vapor in various layers and latitude belts to the sensitivity. The contribution of water vapor in layers of equal mass to the climate sensitivity varies by about a factor of 2 with height, with the largest contribution coming from layers between 450 and 750 mb, and the smallest from layers above 230 mb. The positive feedback on the global mean surface temperature response to doubled CO{sub 2} from water vapor above 750 mb is about 2.6 times as large as that from water vapor below 750 mb. The feedback on global mean surface temperature due to water vapor in the extratropical free troposphere is about 50% larger than the feedback due to the lower-latitude free troposphere water vapor. Several important sources of nonlinearity of the radiative heating rates were identified in the process of constructing the specified cloud and water vapor fields. These are (1) the interaction of clouds and solar radiation, which produces much more reflection of solar radiation for time mean clouds than for the instantaneous clouds; (2) the correlation of clouds and water vapor, which produces less downward longwave radiation at the ground for correlated clouds and water vapor than when these fields are independent; and (3) the interaction of water vapor with long wave radiation, which produces less downward longwave radiation at the ground of the average over instantaneous water vapor distributions than of the time mean water vapor distribution.

Schneider, E.K.; Kirtman, B.P.; Lindzen, R.S. [Center for Ocean-Land-Atmosphere Studies, Calverton, MD (United States)] [Center for Ocean-Land-Atmosphere Studies, Calverton, MD (United States)

1999-06-01T23:59:59.000Z

287

Observation of photoluminescence from Al1 xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy  

E-Print Network [OSTI]

Observation of photoluminescence from Al1 xInxN heteroepitaxial films grown by metalorganic vapor have observed photoluminescence of Al1 xInxN films. The films were grown on GaN by atmospheric pressure-temperature deposited AlN buffer layer. Photoluminescence, absorption, and x-ray diffraction measurements have shown

Wetzel, Christian M.

288

Quantitative organic vapor-particle sampler  

DOE Patents [OSTI]

A quantitative organic vapor-particle sampler for sampling semi-volatile organic gases and particulate components. A semi-volatile organic reversible gas sorbent macroreticular resin agglomerates of randomly packed microspheres with the continuous porous structure of particles ranging in size between 0.05-10 .mu.m for use in an integrated diffusion vapor-particle sampler.

Gundel, Lara (Berkeley, CA); Daisey, Joan M. (Walnut Creek, CA); Stevens, Robert K. (Cary, NC)

1998-01-01T23:59:59.000Z

289

Thermophilic Biotrickling Filtration of Ethanol Vapors  

E-Print Network [OSTI]

Thermophilic Biotrickling Filtration of Ethanol Vapors H U U B H . J . C O X , T H O M A S S E X of ethanol vapors in biotrickling filters for air pollution control was investigated. Two reactors were adaptation phase, the removal of ethanol was similar in both reactors. At a bed contact time of 57 s

290

LNG fire and vapor control system technologies  

SciTech Connect (OSTI)

This report provides a review of fire and vapor control practices used in the liquefied natural gas (LNG) industry. Specific objectives of this effort were to summarize the state-of-the-art of LNG fire and vapor control; define representative LNG facilities and their associated fire and vapor control systems; and develop an approach for a quantitative effectiveness evaluation of LNG fire and vapor control systems. In this report a brief summary of LNG physical properties is given. This is followed by a discussion of basic fire and vapor control design philosophy and detailed reviews of fire and vapor control practices. The operating characteristics and typical applications and application limitations of leak detectors, fire detectors, dikes, coatings, closed circuit television, communication systems, dry chemicals, water, high expansion foam, carbon dioxide and halogenated hydrocarbons are described. Summary descriptions of a representative LNG peakshaving facility and import terminal are included in this report together with typical fire and vapor control systems and their locations in these types of facilities. This state-of-the-art review identifies large differences in the application of fire and vapor control systems throughout the LNG industry.

Konzek, G.J.; Yasutake, K.M.; Franklin, A.L.

1982-06-01T23:59:59.000Z

291

Development of chemical vapor composites, CVC materials. Final report  

SciTech Connect (OSTI)

Industry has a critical need for high-temperature operable ceramic composites that are strong, non-brittle, light weight, and corrosion resistant. Improvements in energy efficiency, reduced emissions and increased productivity can be achieved in many industrial processes with ceramic composites if the reaction temperature and pressure are increased. Ceramic composites offer the potential to meet these material requirements in a variety of industrial applications. However, their use is often restricted by high cost. The Chemical Vapor composite, CVC, process can reduce the high costs and multiple fabrication steps presently required for ceramic fabrication. CVC deposition has the potential to eliminate many difficult processing problems and greatly increase fabrication rates for composites. With CVC, the manufacturing process can control the composites` density, microstructure and composition during growth. The CVC process: can grow or deposit material 100 times faster than conventional techniques; does not require an expensive woven preform to infiltrate; can use high modulus fibers that cannot be woven into a preform; can deposit composites to tolerances of less than 0.025 mm on one surface without further machining.

NONE

1998-10-05T23:59:59.000Z

292

Research Tools  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest RegionatSearch Welcome toResearch Areas OurLANLSoftware & Tools

293

Tools | JCESR  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest RegionatSearchScheduled System BurstLongTitan Titan is a two-beamTools JCESR

294

Enrollment Tools  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series toESnet4: Networking for37EnergyNuclear SecurityEnolEnrollment Tools

295

HANFORD CHEMICAL VAPORS WORKER CONCERNS & EXPOSURE EVALUATION  

SciTech Connect (OSTI)

Chemical vapor emissions from underground hazardous waste storage tanks on the Hanford site in eastern Washington State are a potential concern because workers enter the tank farms on a regular basis for waste retrievals, equipment maintenance, and surveillance. Tank farm contractors are in the process of retrieving all remaining waste from aging single-shell tanks, some of which date to World War II, and transferring it to newer double-shell tanks. During the waste retrieval process, tank farm workers are potentially exposed to fugitive chemical vapors that can escape from tank headspaces and other emission points. The tanks are known to hold more than 1,500 different species of chemicals, in addition to radionuclides. Exposure assessments have fully characterized the hazards from chemical vapors in half of the tank farms. Extensive sampling and analysis has been done to characterize the chemical properties of hazardous waste and to evaluate potential health hazards of vapors at the ground surface, where workers perform maintenance and waste transfer activities. Worker concerns. risk communication, and exposure assessment are discussed, including evaluation of the potential hazards of complex mixtures of chemical vapors. Concentrations of vapors above occupational exposure limits-(OEL) were detected only at exhaust stacks and passive breather filter outlets. Beyond five feet from the sources, vapors disperse rapidly. No vapors have been measured above 50% of their OELs more than five feet from the source. Vapor controls are focused on limited hazard zones around sources. Further evaluations of vapors include analysis of routes of exposure and thorough analysis of nuisance odors.

ANDERSON, T.J.

2006-12-20T23:59:59.000Z

296

Quantitative Infrared Intensity Studies of Vapor-PhaseGlyoxal...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Infrared Intensity Studies of Vapor-Phase Glyoxal,Methylglyoxal, and 2,3-Butanedione (Diacetyl) with Quantitative Infrared Intensity Studies of Vapor-Phase Glyoxal,Methylglyoxal,...

297

Absolute integrated intensities of vapor-phase hydrogen peroxide...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Absolute integrated intensities of vapor-phase hydrogen peroxide (H202) in the mid-infrared at atmospheric pressure. Absolute integrated intensities of vapor-phase hydrogen...

298

Vapor Pressure measurements for dichlorosilane  

E-Print Network [OSTI]

with applications requiring precise control of the placement and thickness of layers of pure silicon. Chlorosilanes are a group of silanes that contain chlorine. Some of the more common chlorosilanes are dichlorosilane (SiH, Cl, ), uichlorosilane (SiHC1... applications is manufactured by reaction of silanes or chlorosilanes to deposit pure silicon. The stringent purity requirements of the semiconductor industry require extremely high purity levels in the manufactured silicon and, as a prerequisite...

Morris, Tony Knimbula

1997-01-01T23:59:59.000Z

299

Oxygen-assisted room-temperature deposition of CoPt3 films with perpendicular magnetic anisotropy  

E-Print Network [OSTI]

Oxygen-assisted room-temperature deposition of CoPt3 films with perpendicular magnetic anisotropy B Jolla, California 92093 Received 23 July 2002; accepted 30 September 2002 Trace amounts of oxygen CoPt3 grown by vapor deposition at or slightly above room temperature. Oxygen is known to act

Hellman, Frances

300

Optical monitor for water vapor concentration  

DOE Patents [OSTI]

A system for measuring and monitoring water vapor concentration in a sample uses as a light source an argon discharge lamp, which inherently emits light with a spectral line that is close to a water vapor absorption line. In a preferred embodiment, the argon line is split by a magnetic field parallel to the direction of light propagation from the lamp into sets of components of downshifted and upshifted frequencies of approximately 1575 Gauss. The downshifted components are centered on a water vapor absorption line and are thus readily absorbed by water vapor in the sample; the upshifted components are moved away from that absorption line and are minimally absorbed. A polarization modulator alternately selects the upshifted components or downshifted components and passes the selected components to the sample. After transmission through the sample, the transmitted intensity of a component of the argon line varies as a result of absorption by the water vapor. The system then determines the concentration of water vapor in the sample based on differences in the transmitted intensity between the two sets of components. In alternative embodiments alternate selection of sets of components is achieved by selectively reversing the polarity of the magnetic field or by selectively supplying the magnetic field to the emitting plasma.

Kebabian, Paul (Acton, MA)

1998-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Prediction of blast damage from vapor cloud explosions  

SciTech Connect (OSTI)

The process industries handle a wide range of different materials and use them in different types of chemical reaction. Of particular concern is the prospect of damage and injury affecting the general public outside the boundary wall of the chemical plant. It is not wise to permit the construction of homes, schools or hospitals so close to chemical plants that they, and the people within, might be damaged or injured should there be an accidental explosion in the plant. The major hazard outside the plant is over-pressure, a consequence of an accidental explosion in a cloud of flammable gas or vapor (Vapor Cloud Explosion or VCE). It is the responsibility of plant management to ensure that any such accidental explosion is not so large as to endanger the public, and of the local planning authorities to ensure that homes, schools or hospitals are not sited so close to chemical plants that they may be endangered by accidental explosion. A vital tool for such authorities is a simple method of assessing the possible consequences of an accidental VCE. In this paper those methods of assessing the consequences are examined.

Phillips, H. [Phillips (H.), Buxton (United Kingdom)

1995-12-31T23:59:59.000Z

302

Particle deposition in ventilation ducts  

E-Print Network [OSTI]

and An Evaluation of Thermophoretic Deposition Rates C.1of estimated thermophoretic deposition velocities, v th+ ,of estimated thermophoretic deposition velocities, v th+ ,

Sippola, Mark R.

2002-01-01T23:59:59.000Z

303

Novel Low Cost Organic Vapor Jet Printing of Striped High Efficiency Phosphorescent OLEDs for White Lighting  

SciTech Connect (OSTI)

In this program, Universal Display Corporation and University of Michigan proposed to integrate three innovative concepts to meet the DOE's Solid State Lighting (SSL) goals: (1) high-efficiency phosphorescent organic light emitting device (PHOLED{trademark}) technology, (2) a white lighting design that is based on a series of red, green and blue OLED stripes, and (3) the use of a novel cost-effective, high rate, mask-less deposition process called organic vapor jet printing (OVJP). Our PHOLED technology offers up to four-times higher power efficiency than other OLED approaches for general lighting. We believe that one of the most promising approaches to maximizing the efficiency of OLED lighting sources is to produce stripes of the three primary colors at such a pitch (200-500 {mu}m) that they appear as a uniform white light to an observer greater than 1 meter (m) away from the illumination source. Earlier work from a SBIR Phase 1 entitled 'White Illumination Sources Using Striped Phosphorescent OLEDs' suggests that stripe widths of less than 500 {mu}m appear uniform from a distance of 1m without the need for an external diffuser. In this program, we intend to combine continued advances in this PHOLED technology with the striped RGB lighting design to demonstrate a high-efficiency, white lighting source. Using this background technology, the team has focused on developing and demonstrating the novel cost-effective OVJP process to fabricate these high-efficiency white PHOLED light sources. Because this groundbreaking OVJP process is a direct printing approach that enables the OLED stripes to be printed without a shadow mask, OVJP offers very high material utilization and high throughput without the costs and wastage associated with a shadow mask (i.e. the waste of material that deposits on the shadow mask itself). As a direct printing technique, OVJP also has the potential to offer ultra-high deposition rates (> 1,000 Angstroms/second) for any size or shaped features. As a result, we believe that this work will lead to the development of a cost-effective manufacturing solution to produce very-high efficiency OLEDs. By comparison to more common ink-jet printing (IJP), OVJP can also produce well-defined patterns without the need to pattern the substrate with ink wells or to dry/anneal the ink. In addition, the material set is not limited by viscosity and solvent solubility. During the program we successfully demonstrated a 6-inch x 6-inch PHOLED lighting panel consisting of fine-featured red, green and blue (R-G-B) stripes (1mm width) using an OVJP deposition system that was designed, procured and installed into UDC's cleanroom as part of this program. This project will significantly accelerate the DOE's ability to meet its 2015 DOE SSL targets of 70-150 lumens/Watt and less than $10 per 1,000 lumens for high CRI lighting index (76-90). Coupled with a low cost manufacturing path through OVJP, we expect that this achievement will enable the DOE to achieve its 2015 performance goals by the year 2013, two years ahead of schedule. As shown by the technical work performed under this program, we believe that OVJP is a very promising technology to produce low cost, high efficacy, color tunable light sources. While we have made significant progress to develop OVJP technology and build a pilot line tool to study basic aspects of the technology and demonstrate a lighting panel prototype, further work needs to be performed before its full potential and commercial viability can be fully assessed.

Mike Hack

2008-12-31T23:59:59.000Z

304

Nanocoatings for High-Efficiency Industrial and Tooling Systems  

SciTech Connect (OSTI)

This industry-driven project was the result of a successful response by Eaton Corporation to a DOE/ITP Program industry call. It consisted of three phases in which ORNL participated. In addition to Eaton Corporation and ORNL (CRADA), the project team included Ames Laboratory, who developed the underlying concept for aluminum-magnesium-boron based nanocomposite coatings [1], and Greenleaf, a small tooling manufacturer in western Pennsylvania. This report focuses on the portion of this work that was conducted by ORNL in a CRADA with Eaton Corporation. A comprehensive final report for the entire effort, which ended in September 2010, has been prepared by Eaton Corporation. Phase I, “Proof of Concept” ran for one year (September 1, 2006 to September 30, 2007) during which the applicability of AlMgB14 single-phase and nanocomposite coatings on hydraulic material coupons and components as well as on tool inserts was demonstrated.. The coating processes used either plasma laser deposition (PLD) or physical vapor deposition (PVD). During Phase I, ORNL conducted laboratory-scale pin-on-disk and reciprocating pin-on-flat tests of coatings produced by PLD and PVD. Non-coated M2 tool steel was used as a baseline for comparison, and the material for the sliding counterface was Type 52100 bearing steel since it simulated the pump materials. Initial tests were run mainly in a commercial hydraulic fluid named Mobil DTE-24, but some tests were later run in a water-glycol mixture as well. A tribosystem analysis was conducted to define the operating conditions of pump components and to help develop simulative tests in Phase II. Phase II, “Coating Process Scale-up” was intended to use scaled-up process to generate prototype parts. This involved both PLD practices at Ames Lab, and a PVD scale-up study at Eaton using its production capable equipment. There was also a limited scale-up study at Greenleaf for the tooling application. ORNL continued to conduct friction and wear tests on process variants and developed tests to better simulate the applications of interest. ORNL also employed existing lubrication models to better understand hydraulic pump frictional behavior and test results. Phase III, “Functional Testing” focused on finalizing the strategy for commercialization of AlMgB14 coatings for both hydraulic and tooling systems. ORNL continued to provide tribology testing and analysis support for hydraulic pump applications. It included both laboratory-scale coupon testing and the analysis of friction and wear data from full component-level tests performed at Eaton Corp. Laboratory-scale tribology test methods are used to characterize the behavior of nanocomposite coatings prior to running them in full-sized hydraulic pumps. This task also includes developing tribosystems analyses, both to provide a better understanding of the performance of coated surfaces in alternate hydraulic fluids, and to help design useful laboratory protocols. Analysis also includes modeling the lubrication conditions and identifying the physical processes by which wear and friction of the contact interface changes over time. This final report summarizes ORNL’s portion of the nanocomposite coatings development effort and presents both generated data and the analyses that were used in the course of this effort.

Blau, P; Qu, J.; Higdon, C. (Eaton Corporation)

2011-02-01T23:59:59.000Z

305

Vapor Pressures and Vaporization, Sublimation, and Fusion Enthalpies of Some Fatty Acids  

E-Print Network [OSTI]

Vapor Pressures and Vaporization, Sublimation, and Fusion Enthalpies of Some Fatty Acids Joe A. Wilson and James S. Chickos* Department of Chemistry and Biochemistry, University of MissouriSt. Louis, St. Louis, Missouri 63121, United States *S Supporting Information ABSTRACT: Sublimation enthalpies

Chickos, James S.

306

Vapor Pressures and Vaporization Enthalpies of a Series of Dialkyl Phthalates by Correlation Gas Chromatography  

E-Print Network [OSTI]

Chromatography Chase Gobble and James Chickos* Department of Chemistry and Biochemistry University of Missouri-St. Louis, St. Louis Missouri 63121, United States Sergey P. Verevkin Department of Physical Chemistry: Experimental vapor pressures, vaporization, fusion and sublimation enthalpies of a number of dialkyl

Chickos, James S.

307

Vapor scavenging by atmospheric aerosol particles  

SciTech Connect (OSTI)

Particle growth due to vapor scavenging was studied using both experimental and computational techniques. Vapor scavenging by particles is an important physical process in the atmosphere because it can result in changes to particle properties (e.g., size, shape, composition, and activity) and, thus, influence atmospheric phenomena in which particles play a role, such as cloud formation and long range transport. The influence of organic vapor on the evolution of a particle mass size distribution was investigated using a modified version of MAEROS (a multicomponent aerosol dynamics code). The modeling study attempted to identify the sources of organic aerosol observed by Novakov and Penner (1993) in a field study in Puerto Rico. Experimentally, vapor scavenging and particle growth were investigated using two techniques. The influence of the presence of organic vapor on the particle`s hydroscopicity was investigated using an electrodynamic balance. The charge on a particle was investigated theoretically and experimentally. A prototype apparatus--the refractive index thermal diffusion chamber (RITDC)--was developed to study multiple particles in the same environment at the same time.

Andrews, E.

1996-05-01T23:59:59.000Z

308

Environmentally focused patterning and processing of polymer thin films by initiated chemical vapor deposition (iCVD) and oxidative chemical vapor deposition (oCVD)  

E-Print Network [OSTI]

The new millennium has brought fourth many technological innovations made possible by the advancement of high speed integrated circuits. The materials and energy requirements for a microchip is orders of magnitude higher ...

Trujillo, Nathan J. (Nathan Jeffrey)

2010-01-01T23:59:59.000Z

309

Vibrational spectra of CO adsorbed on oxide thin films: A tool to probe the surface defects and phase changes of oxide thin films  

SciTech Connect (OSTI)

Thin films of iron oxide were grown on Pt(111) single crystals using cycles of physical vapor deposition of iron followed by oxidative annealing in an ultrahigh vacuum apparatus. Two procedures were utilized for film growth of ?15–30 ML thick films, where both procedures involved sequential deposition+oxidation cycles. In procedure 1, the iron oxide film was fully grown via sequential deposition+oxidation cycles, and then the fully grown film was exposed to a CO flux equivalent to 8 × 10{sup ?7} millibars, and a vibrational spectrum of adsorbed CO was obtained using infrared reflection-absorption spectroscopy. The vibrational spectra of adsorbed CO from multiple preparations using procedure 1 show changes in the film termination structure and/or chemical nature of the surface defects—some of which are correlated with another phase that forms (“phase B”), even before enough of phase B has formed to be easily detected using low energy electron diffraction (LEED). During procedure 2, CO vibrational spectra were obtained between deposition+oxidation cycles, and these spectra show that the film termination structure and/or chemical nature of the surface defects changed as a function of sequential deposition+oxidation cycles. The authors conclude that measurement of vibrational spectra of adsorbed CO on oxide thin films provides a sensitive tool to probe chemical changes of defects on the surface and can thus complement LEED techniques by probing changes not visible by LEED. Increased use of vibrational spectra of adsorbed CO on thin films would enable better comparisons between films grown with different procedures and by different groups.

Savara, Aditya, E-mail: savaraa@ornl.gov [Chemical Sciences Division, Oak Ridge National Lab, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831 (United States)

2014-03-15T23:59:59.000Z

310

Vapor characterization of Tank 241-C-103  

SciTech Connect (OSTI)

The Westinghouse Hanford Company Tank Vapor Issue Resolution Program has developed, in cooperation with Northwest Instrument Systems, Inc., Oak Ridge National Laboratory, Oregon Graduate Institute of Science and Technology, Pacific Northwest Laboratory, and Sandia National Laboratory, the equipment and expertise to characterize gases and vapors in the high-level radioactive waste storage tanks at the Hanford Site in south central Washington State. This capability has been demonstrated by the characterization of the tank 241-C-103 headspace. This tank headspace is the first, and for many reasons is expected to be the most problematic, that will be characterized (Osborne 1992). Results from the most recent and comprehensive sampling event, sample job 7B, are presented for the purpose of providing scientific bases for resolution of vapor issues associated with tank 241-C-103. This report is based on the work of Clauss et al. 1994, Jenkins et al. 1994, Ligotke et al. 1994, Mahon et al. 1994, and Rasmussen and Einfeld 1994. No attempt has been made in this report to evaluate the implications of the data presented, such as the potential impact of headspace gases and vapors to tank farm workers health. That and other issues will be addressed elsewhere. Key to the resolution of worker health issues is the quantitation of compounds of toxicological concern. The Toxicology Review Panel, a panel of Pacific Northwest Laboratory experts in various areas, of toxicology, has chosen 19 previously identified compounds as being of potential toxicological concern. During sample job 7B, the sampling and analytical methodology was validated for this preliminary list of compounds of toxicological concern. Validation was performed according to guidance provided by the Tank Vapor Conference Committee, a group of analytical chemists from academic institutions and national laboratories assembled and commissioned by the Tank Vapor Issue Resolution Program.

Huckaby, J.L. [Westinghouse Hanford Co., Richland, WA (United States); Story, M.S. [Northwest Instrument Systems, Inc. Richland, WA (United States)

1994-06-01T23:59:59.000Z

311

Method and Apparatus for Concentrating Vapors for Analysis  

DOE Patents [OSTI]

An apparatus and method are disclosed for pre-concentrating gaseous vapors for analysis. The invention finds application in conjunction with, e.g., analytical instruments where low detection limits for gaseous vapors are desirable. Vapors sorbed and concentrated within the bed of the apparatus can be thermally desorbed achieving at least partial separation of vapor mixtures. The apparatus is suitable, e.g., for preconcentration and sample injection, and provides greater resolution of peaks for vapors within vapor mixtures, yielding detection levels that are 10-10,000 times better than for direct sampling and analysis systems. Features are particularly useful for continuous unattended monitoring applications.

Grate, Jay W. (West Richland, WA); Baldwin, David L. (Kennewick, WA); Anheier, Jr., Norman C. (Richland, WA)

2008-10-07T23:59:59.000Z

312

Deposition of WNxCy thin films for diffusion barrier application using the dimethylhydrazido (2-  

E-Print Network [OSTI]

thickness to the barrier scheme as well as an additional processing step. Binary transition metal compounds 13 April 2009 Available online xxxx Keywords: Chemical vapor deposition Metallization Tungsten nitride carbide Diffusion barrier X-ray diffraction Auger electron spectroscopy Tungsten nitride carbide

Anderson, Timothy J.

313

Thermal electric vapor trap arrangement and method  

DOE Patents [OSTI]

A technique for trapping vapor within a section of a tube is disclosed herein. This technique utilizes a conventional, readily providable thermal electric device having a hot side and a cold side and means for powering the device to accomplish this. The cold side of this device is positioned sufficiently close to a predetermined section of the tube and is made sufficiently cold so that any condensable vapor passing through the predetermined tube section is condensed and trapped, preferably within the predetermined tube section itself. 4 figs.

Alger, T.

1988-03-15T23:59:59.000Z

314

Apparatus for depositing hard coating in a nozzle orifice  

DOE Patents [OSTI]

The present invention is directed to a process for coating the interior surfaces of an orifice in a substrate that forms a slurry fuel injection nozzle. In a specific embodiment, the nozzle is part of a fuel injection system for metering a coal-water slurry into a large, medium-speed, multi-cylinder diesel engine. In order to retard erosion of the orifice, the substrate is placed in a chemical vapor deposition (CVD) reaction chamber. A reaction gas is passed into the chamber at a gas temperature below its reaction temperature and is directed through the orifice in the substrate. The gas reaction temperature is a temperature at and above which the reaction gas deposits as a coating, and the reaction gas is of a composition whereby improved resistance to erosion by flow of the particulates in the slurry fuel is imparted by the deposited coating. Only the portion of the substrate in proximity to the orifice to be coated is selectively heated to at least the gas reaction temperature for effecting coating of the orifice's interior surfaces by the vapor deposited coating formed from the reaction gas.

Flynn, Paul L. (Fairview, PA); Giammarise, Anthony W. (Erie, PA)

1995-01-01T23:59:59.000Z

315

Apparatus for depositing hard coating in a nozzle orifice  

DOE Patents [OSTI]

The present invention is directed to a process for coating the interior surfaces of an orifice in a substrate that forms a slurry fuel injection nozzle. In a specific embodiment, the nozzle is part of a fuel injection system for metering a coal-water slurry into a large, medium-speed, multi-cylinder diesel engine. In order to retard erosion of the orifice, the substrate is placed in a chemical vapor deposition (CVD) reaction chamber. A reaction gas is passed into the chamber at a gas temperature below its reaction temperature and is directed through the orifice in the substrate. The gas reaction temperature is a temperature at and above which the reaction gas deposits as a coating, and the reaction gas is of a composition whereby improved resistance to erosion by flow of the particulates in the slurry fuel is imparted by the deposited coating. Only the portion of the substrate in proximity to the orifice to be coated is selectively heated to at least the gas reaction temperature for effecting coating of the orifice`s interior surfaces by the vapor deposited coating formed from the reaction gas. 2 figs.

Flynn, P.L.; Giammarise, A.W.

1995-02-21T23:59:59.000Z

316

Process for depositing hard coating in a nozzle orifice  

DOE Patents [OSTI]

The present invention is directed to a process for coating the interior surfaces of an orifice in a substrate that forms a slurry fuel injection nozzle. In a specific embodiment, the nozzle is part of a fuel injection system for metering a coal-water slurry into a large, medium-speed, multi-cylinder diesel engine. In order to retard erosion of the orifice, the substrate is placed in a chemical vapor deposition (CVD) reaction chamber. A reaction gas is passed into the chamber at a gas temperature below its reaction temperature and is directed through the orifice in the substrate. The gas reaction temperature is a temperature at and above which the reaction gas deposits as a coating, and the reaction gas is of a composition whereby improved resistance toerosion by flow of the particulates in the slurry fuel is imparted by the deposited coating. Only the portion of the substrate in proximity to the orifice to be coated is selectively heated to at least the gas reaction temperature for effecting coating of the orifice's interior surfaces by the vapor deposited coating formed from the reaction gas.

Flynn, Paul L. (5139 Fox Park Dr., Fairview, PA 16415); Giammarise, Anthony W. (527 Lincoln Ave., Erie, PA 16505)

1991-01-01T23:59:59.000Z

317

Process for depositing hard coating in a nozzle orifice  

DOE Patents [OSTI]

The present invention is directed to a process for coating the interior surfaces of an orifice in a substrate that forms a slurry fuel injection nozzle. In a specific embodiment, the nozzle is part of a fuel injection system for metering a coal-water slurry into a large, medium-speed, multi-cylinder diesel engine. In order to retard erosion of the orifice, the substrate is placed in a chemical vapor deposition (CVD) reaction chamber. A reaction gas is passed into the chamber at a gas temperature below its reaction temperature and is directed through the orifice in the substrate. The gas reaction temperature is a temperature at and above which the reaction gas deposits as a coating, and the reaction gas is of a composition whereby improved resistance to erosion by flow of the particulates in the slurry fuel is imparted by the deposited coating. Only the portion of the substrate in proximity to the orifice to be coated is selectively heated to at least the gas reaction temperature for effecting coating of the orifice's interior surfaces by the vapor deposited coating formed from the reaction gas. 2 figures.

Flynn, P.L.; Giammarise, A.W.

1991-10-29T23:59:59.000Z

318

The power tool  

SciTech Connect (OSTI)

POWER Tool--Planning, Optimization, Waste Estimating and Resourcing tool, a hand-held field estimating unit and relational database software tool for optimizing disassembly and final waste form of contaminated systems and equipment.

HAYFIELD, J.P.

1999-02-01T23:59:59.000Z

319

TNA Data Collection Tool  

Broader source: Energy.gov [DOE]

The TNA Data Collection Tool Instructions provides guidance on how to complete the TNA Data Collection Tool. The TNA Data Collection Tool is an Excel spreadsheet that the organization's designating training POC will use to populate their organizations training needs.

320

Research on thermophoretic and inertial aspects of ash particle deposition on heat exchanger surfaces in coal-fired equipment: Quarterly technical report, June 1, 1987-August 31, 1987  

SciTech Connect (OSTI)

Our emphasis in the present program is on experimentally validating and developing rational, theoretical methods of predicting the role of inertia and ash particle thermophoresis in determining net deposition rates. We also wish to quantify how simultaneous vapor deposition (e.g., alkali sulfate) can influence the sticking and erosion associated with impacting particles. 6 refs., 2 figs.

Rosner, D.E.

1987-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

ZnO/Cu(InGa)Se2 solar cells prepared by vapor phase Zn doping  

DOE Patents [OSTI]

A process for making a thin film ZnO/Cu(InGa)Se2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se2.

Ramanathan, Kannan; Hasoon, Falah S.; Asher, Sarah E.; Dolan, James; Keane, James C.

2007-02-20T23:59:59.000Z

322

Vapor intrusion modeling : limitations, improvements, and value of information analyses  

E-Print Network [OSTI]

Vapor intrusion is the migration of volatile organic compounds (VOCs) from a subsurface source into the indoor air of an overlying building. Vapor intrusion models, including the Johnson and Ettinger (J&E) model, can be ...

Friscia, Jessica M. (Jessica Marie)

2014-01-01T23:59:59.000Z

323

Moisture Durability of Vapor Permeable Insulating Sheathing (Fact Sheet)  

SciTech Connect (OSTI)

In this project, Building America team Building Science Corporation researched some of the ramifications of using exterior, vapor permeable insulation on retrofit walls with vapor permeable cavity insulation. Retrofit strategies are a key factor in reducing exterior building stock consumption.

Not Available

2013-10-01T23:59:59.000Z

324

Desalination Using Vapor-Compression Distillation  

E-Print Network [OSTI]

and MSF, this research investigates a high-efficiency mechanical vapor-compression distillation system that employs an improved water flow arrangement. The incoming salt concentration was 0.15% salt for brackish water and 3.5% salt for seawater, whereas...

Lubis, Mirna R.

2010-07-14T23:59:59.000Z

325

Reductive Dehalogenation of Trichloroethene Vapors in an  

E-Print Network [OSTI]

to treat trichloroethene (TCE) from waste gases generated by soil vapor extraction or dual-phase extraction through the recirculating liquid as a source of hydrogen, the electron donor for Dehalococcoides strains (DPE) (4). However, these techniques result in a waste gas stream that needs further treatment. Several

326

Advancing Explosives Detection Capabilities: Vapor Detection  

ScienceCinema (OSTI)

A new, PNNL-developed method provides direct, real-time detection of trace amounts of explosives such as RDX, PETN and C-4. The method selectively ionizes a sample before passing the sample through a mass spectrometer to detect explosive vapors. The method could be used at airports to improve aviation security.

Atkinson, David

2014-07-24T23:59:59.000Z

327

Vaporization of synthetic fuels. Final report. [Thesis  

SciTech Connect (OSTI)

The problem of transient droplet vaporization in a hot convective environment is examined. The main objective of the present study is to develop an algorithm for the droplet vaporization which is simple enough to be feasibly incorporated into a complete spray combustion analysis and yet will also account for the important physics such as liquid-phase internal circulation, unsteady droplet heating and axisymmetric gas-phase convection. A simplified liquid-phase model has been obtained based on the assumption of the existence of a Hill's spherical vortex inside the droplet together with some approximations made in the governing diffusion equation. The use of the simplified model in a spray situation has also been examined. It has been found that droplet heating and vaporization are essentially unsteady and droplet temperature is nonuniform for a significant portion of its lifetime. It has also been found that the droplet vaporization characteristic can be quite sensitive to the particular liquid-phase and gas-phase models. The results of the various models are compared with the existing experimental data. Due to large scattering in the experimental measurements, particularly the droplet diameter, no definite conclusion can be drawn based on the experimental data. Finally, certain research problems which are related to the present study are suggested for future studies.

Sirignano, W.A.; Yao, S.C.; Tong, A.Y.; Talley, D.

1983-01-01T23:59:59.000Z

328

Instrument Series: Deposition and Microfabrication Sputter Deposition  

E-Print Network [OSTI]

Sensors ­ thin film growth of functional material systems for developing highly sensitive and portable chemical and biological sensors Energy sources ­ development of thin film materials systems for research and solid oxide fuel cells and solar cells for energy generation Microfabrication ­ deposition

329

Radionuclide deposition control  

DOE Patents [OSTI]

The deposition of radionuclides manganese-54, cobalt-58 and cobalt-60 from liquid sodium coolant is controlled by providing surfaces of nickel or high nickel alloys to extract the radionuclides from the liquid sodium, and by providing surfaces of tungsten, molybdenum or tantalum to prevent or retard radionuclide deposition.

Brehm, William F. (Richland, WA); McGuire, Joseph C. (Richland, WA)

1980-01-01T23:59:59.000Z

330

Industrial Heat Pumps Using Solid/Vapor Working Fluids  

E-Print Network [OSTI]

INDUSTRIAL HEAT PUMPS USING SOLID/VAPOR WORKING FLUIDS Uwe Rockenfeller, Desert Research Institute, Boulder City, Nevada ABSTRACT Industrial heat pumps have the potential to reduce the operating costs of chemical and heat treating processes... with vapor re-compression recovery systems. The state-of-the-art heat pump equipment employing liquid/vapor working fluids fulfills the requirements only in some applications. The employment of solid/vapor complex compounds leads to 'nore cost effective...

Rockenfeller, U.

331

Solution deposition assembly  

DOE Patents [OSTI]

Methods and devices are provided for improved deposition systems. In one embodiment of the present invention, a deposition system is provided for use with a solution and a substrate. The system comprises of a solution deposition apparatus; at least one heating chamber, at least one assembly for holding a solution over the substrate; and a substrate curling apparatus for curling at least one edge of the substrate to define a zone capable of containing a volume of the solution over the substrate. In another embodiment of the present invention, a deposition system for use with a substrate, the system comprising a solution deposition apparatus; at heating chamber; and at least assembly for holding solution over the substrate to allow for a depth of at least about 0.5 microns to 10 mm.

Roussillon, Yann; Scholz, Jeremy H; Shelton, Addison; Green, Geoff T; Utthachoo, Piyaphant

2014-01-21T23:59:59.000Z

332

Biomimetic thin film deposition  

SciTech Connect (OSTI)

Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

1995-09-01T23:59:59.000Z

333

Modeling engine oil vaporization and transport of the oil vapor in the piston ring pack on internal combustion engines  

E-Print Network [OSTI]

A model was developed to study engine oil vaporization and oil vapor transport in the piston ring pack of internal combustion engines. With the assumption that the multi-grade oil can be modeled as a compound of several ...

Cho, Yeunwoo, 1973-

2004-01-01T23:59:59.000Z

334

Development of hybrid organic-inorganic light emitting diodes using conducting polymers deposited by oxidative chemical vapor deposition process  

E-Print Network [OSTI]

Difficulties with traditional methods of synthesis and film formation for conducting polymers, many of which are insoluble, motivate the development of CVD methods. Indeed, conjugated polymers with rigid linear backbones ...

Chelawat, Hitesh

2010-01-01T23:59:59.000Z

335

Water, Vapor, and Salt Dynamics in a Hot Repository  

SciTech Connect (OSTI)

The purpose of this paper is to report the results of a new model study examining the high temperature nuclear waste disposal concept at Yucca Mountain using MULTIFLUX, an integrated in-drift- and mountain-scale thermal-hydrologic model. The results show that a large amount of vapor flow into the drift is expected during the period of above-boiling temperatures. This phenomenon makes the emplacement drift a water/moisture attractor during the above-boiling temperature operation. The evaporation of the percolation water into the drift gives rise to salt accumulation in the rock wall, especially in the crown of the drift for about 1500 years in the example. The deposited salts over the drift footprint, almost entirely present in the fractures, may enter the drift either by rock fall or by water drippage. During the high temperature operation mode, the barometric pressure variation creates fluctuating relative humidity in the emplacement drift with a time period of approximately 10 days. Potentially wet and dry conditions and condensation on salt-laden drift wall sections may adversely affect the storage environment. Salt accumulations during the above-boiling temperature operation must be sufficiently addressed to fully understand the waste package environment during the thermal period. Until the questions are resolved, a below-boiling repository design is favored where the Alloy-22 will be less susceptible to localized corrosion. (authors)

Bahrami, Davood; Danko, George [Department of Mining Engineering, University of Nevada, Reno, 1664 N. Virginia St., Reno, NV, 89557 (United States); Walton, John [Department of Civil Engineering, University of Texas at El Paso, 500 W. University, El Paso, TX, 79968 (United States)

2007-07-01T23:59:59.000Z

336

Ash deposit workshop: Class outline  

SciTech Connect (OSTI)

Ash deposits formed from the combustion of coal and other fuels have plagued the steam production industry from the start. The ash fusion test has been around for over eighty years. As steam plant size increased, so have the problems associated with ash deposits. This workshop is designed to cover: (1) The basic types of deposits. (2) Causes of deposits. (3) Analytical procedures for resolving, or at least providing information about deposits and fuels, and (4) Deposit removal and reduction techniques.

Hatt, R. [Commercial Testing & Engineering Co., Lexington, KY (United States)

1996-12-31T23:59:59.000Z

337

DuPont Chemical Vapor Technical Report  

SciTech Connect (OSTI)

DuPont Safety Resources was tasked with reviewing the current chemical vapor control practices and providing preventive recommendations on best commercial techniques to control worker exposures. The increased focus of the tank closure project to meet the 2024 Tri-Party Agreement (TPA) milestones has surfaced concerns among some CH2MHill employees and other interested parties. CH2MHill is committed to providing a safe working environment for employees and desires to safely manage the tank farm operations using appropriate control measures. To address worker concerns, CH2MHill has chartered a ''Chemical Vapors Project'' to integrate the activities of multiple CH2MHill project teams, and solicit the expertise of external resources, including an independent Industrial Hygiene expert panel, a communications consultant, and DuPont Safety Resources. Over a three-month time period, DuPont worked with CH2MHill ESH&Q, Industrial Hygiene, Engineering, and the independent expert panel to perform the assessment. The process included overview presentations, formal interviews, informal discussions, documentation review, and literature review. DuPont Safety Resources concluded that it is highly unlikely that workers in the tank farms are exposed to chemicals above established standards. Additionally, the conventional and radiological chemistry is understood, the inherent chemical hazards are known, and the risk associated with chemical vapor exposure is properly managed. The assessment highlighted management's commitment to addressing chemical vapor hazards and controlling the associated risks. Additionally, we found the Industrial Hygiene staff to be technically competent and well motivated. The tank characterization data resides in a comprehensive database containing the tank chemical compositions and relevant airborne concentrations.

MOORE, T.L.

2003-10-03T23:59:59.000Z

338

Copper vapor laser modular packaging assembly  

DOE Patents [OSTI]

A modularized packaging arrangement for one or more copper vapor lasers and associated equipment is disclosed herein. This arrangement includes a single housing which contains the laser or lasers and all their associated equipment except power, water and neon, and means for bringing power, water, and neon which are necessary to the operation of the lasers into the container for use by the laser or lasers and their associated equipment.

Alger, Terry W. (Tracy, CA); Ault, Earl R. (Dublin, CA); Moses, Edward I. (Castro Valley, CA)

1992-01-01T23:59:59.000Z

339

Modeling of LNG Pool Spreading and Vaporization  

E-Print Network [OSTI]

..................................................................................... 15 Figure 5: 90 mol% Methane 10mol% Ethane mixture VLE phase envelope .................. 18 Figure 6: Boiling temperature and vapor composition of 90 mol% methane 10mol% ethane mixture... process of natural gas allows a 600 fold reduction in the volume of the gas being transported at ambient pressure. The resulting liquid which is mainly composed of methane presents some hazardous properties linked to its flammable nature and its...

Basha, Omar 1988-

2012-11-20T23:59:59.000Z

340

Vapor-phase heat-transport system  

SciTech Connect (OSTI)

A vapor-phase heat-transport system is being tested in one of the passive test cells at Los Alamos. The system consists of one selective-surface collector and a condenser inside a water storage tank. The refrigerant, R-11, can be returned to the collector by gravity or with a pump. Results from several operating configurations are presented, together with a comparison with other passive systems. A new self-pumping concept is presented.

Hedstrom, J.C.

1983-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Oxide vapor distribution from a high-frequency sweep e-beam system  

SciTech Connect (OSTI)

Oxide vapor distributions have been determined as a function of operating parameters of a high frequency sweep e-beam source combined with a programmable sweep controller. We will show which parameters are significant, the parameters that yield the broadest oxide deposition distribution, and the procedure used to arrive at these conclusions. A design-of-experimental strategy was used with five operating parameters: evaporation rate, sweep speed, sweep pattern (pre-programmed), phase speed (azimuthal rotation of the pattern), profile (dwell time as a function of radial position). A design was chosen that would show which of the parameters and parameter pairs have a statistically significant effect on the vapor distribution. Witness flats were placed symmetrically across a 25 inches diameter platen. The stationary platen was centered 24 inches above the e-gun crucible. An oxide material was evaporated under 27 different conditions. Thickness measurements were made with a stylus profilometer. The information will enable users of the high frequency e-gun systems to optimally locate the source in a vacuum system and understand which parameters have a major effect on the vapor distribution.

Chow, R.; Tassano, P.L.; Tsujimoto, N.

1995-03-01T23:59:59.000Z

342

Combined rankine and vapor compression cycles  

DOE Patents [OSTI]

An organic rankine cycle system is combined with a vapor compression cycle system with the turbine generator of the organic rankine cycle generating the power necessary to operate the motor of the refrigerant compressor. The vapor compression cycle is applied with its evaporator cooling the inlet air into a gas turbine, and the organic rankine cycle is applied to receive heat from a gas turbine exhaust to heat its boiler within one embodiment, a common condenser is used for the organic rankine cycle and the vapor compression cycle, with a common refrigerant, R-245a being circulated within both systems. In another embodiment, the turbine driven generator has a common shaft connected to the compressor to thereby eliminate the need for a separate motor to drive the compressor. In another embodiment, an organic rankine cycle system is applied to an internal combustion engine to cool the fluids thereof, and the turbo charged air is cooled first by the organic rankine cycle system and then by an air conditioner prior to passing into the intake of the engine.

Radcliff, Thomas D.; Biederman, Bruce P.; Brasz, Joost J.

2005-04-19T23:59:59.000Z

343

Applications (Grid Tools)  

E-Print Network [OSTI]

Grid Fabric Software Grid Applications Core Grid Middleware User-Level Middleware (Grid Tools) !"# $ %& ' ( ) * #& + '& ' , - . / # ) ) 0 # * 1 PDB CDB Grid Fabric Hardware &+ '' + ) , '1 '1 ' % - * # ( Grid Fabric Software Grid Applications Core Grid Middleware User-Level Middleware (Grid Tools) !"# $ %& ' ( ) * #& + '& ' , - . / # ) ) 0

Buyya, Rajkumar

344

OOTW COST TOOLS  

SciTech Connect (OSTI)

This document reports the results of a study of cost tools to support the analysis of Operations Other Than War (OOTW). It recommends the continued development of the Department of Defense (DoD) Contingency Operational Support Tool (COST) as the basic cost analysis tool for 00TWS. It also recommends modifications to be included in future versions of COST and the development of an 00TW mission planning tool to supply valid input for costing.

HARTLEY, D.S.III; PACKARD, S.L.

1998-09-01T23:59:59.000Z

345

Deposition of thin silicon layers on transferred large area graphene  

SciTech Connect (OSTI)

Physical vapor deposition of Si onto transferred graphene is investigated. At elevated temperatures, Si nucleates preferably on wrinkles and multilayer graphene islands. In some cases, however, Si can be quasi-selectively grown only on the monolayer graphene regions while the multilayer islands remain uncovered. Experimental insights and ab initio calculations show that variations in the removal efficiency of carbon residuals after the transfer process can be responsible for this behavior. Low-temperature Si seed layer results in improved wetting and enables homogeneous growth. This is an important step towards realization of electronic devices in which graphene is embedded between two Si layers.

Lupina, Grzegorz, E-mail: lupina@ihp-microelectronics.com; Kitzmann, Julia; Lukosius, Mindaugas; Dabrowski, Jarek; Wolff, Andre; Mehr, Wolfgang [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)] [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)

2013-12-23T23:59:59.000Z

346

Oxidative chemical vapor deposition of semiconducting polymers and their use In organic photovoltaics  

E-Print Network [OSTI]

Organic photovoltaics (OPVs) have received significant interest for their potential low cost, high mechanical flexibility, and unique functionalities. OPVs employing semiconducting polymers in the photoactive layer have ...

Borrelli, David Christopher

2014-01-01T23:59:59.000Z

347

Desktop systems for manufacturing carbon nanotube films by chemical vapor deposition  

E-Print Network [OSTI]

Carbon nanotubes (CNTs) exhibit exceptional electrical, thermal, and mechanical properties that could potentially transform such diverse fields as composites, electronics, cooling, energy storage, and biological sensing. ...

Kuhn, David S. (David Scott)

2007-01-01T23:59:59.000Z

348

In-situ observations during chemical vapor deposition of hexagonal boron nitride on polycrystalline copper  

E-Print Network [OSTI]

-characterised the Cu catalyst exposed to ammonia (NH3, i.e. a nitrogen and hydrogen source without B) instead of borazine under similar pressures. For this ammonia exposure no expansion in the Cu lattice constant is found. As ammonia is known to dissociate on Cu... 1s (Figure 5a,b,c) and valence band (Supporting Figure S4) regions.12 We find that before CVD the as loaded Cu foil surface is heavily oxidized due to storage and transportation in ambient air (before step 1).12 Following an anneal (step 2) in H2...

Kidambi, Piran R.; Blume, Raoul; Kling, Jens; Wagner, Jakob B.; Baehtz, Carsten; Weatherup, Robert S.; Schlögl, Robert; Bayer, Bernhard C.; Hofmann, Stephan

2014-10-20T23:59:59.000Z

349

Chemical vapor deposition of conjugated polymeric thin films for photonic and electronic applications  

E-Print Network [OSTI]

(cont.) Conjugated polymers have delocalized electrons along the backbone, facilitating electrical conductivity. As thin films, they are integral to organic semiconductor devices emerging in the marketplace, such as flexible ...

Lock, John P

2005-01-01T23:59:59.000Z

350

Volatile organometallic complexes suitable for use in chemical vapor depositions on metal oxide films  

DOE Patents [OSTI]

Novel ligated compounds of tin, titanium, and zinc are useful as metal oxide CVD precursor compounds without the detriments of extreme reactivity yet maintaining the ability to produce high quality metal oxide coating by contact with heated substrates.

Giolando, Dean M.

2003-09-30T23:59:59.000Z

351

Evaluating the In Vitro Corrosion Behavior and Cytotoxicity of Vapor Deposited Magnesium Alloys.  

E-Print Network [OSTI]

??Magnesium alloys are emerging as a promising class of bioabsorbable implant materials due to magnesium’s biocompatibility and propensity for corrosion. These alloys are useful for… (more)

Petrilli, John

2009-01-01T23:59:59.000Z

352

Low Temperature Direct Growth of Graphene Films on Transparent Substrates by Chemical Vapor Deposition  

E-Print Network [OSTI]

graphene in fields like electronics and optoelectronics.useful for electronics, optoelectronics and photovoltaic

Antoine, Geoffrey Sandosh Jeffy

2013-01-01T23:59:59.000Z

353

Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular  

E-Print Network [OSTI]

-free environment at atmospheric pressure. TMG was kept cool in a -10 °C temperature bath. Nitrogen, used a total nitrogen flow rate of 250 sccm. These were supplied via a 4-mm i.d. quartz tube. Hydrogen and ammonia sources were supplied via a 22-mm i.d. outer quartz tube at a total flow rate of 155 sccm

Yang, Peidong

354

Oxidative and initiated chemical vapor deposition for application to organic electronics  

E-Print Network [OSTI]

Since the first discovery of polymeric conductors in 1977, the research area of "organic electronics" has grown dramatically. However, methods for forming thin films comprised solely of conductive polymers are limited by ...

Im, Sung Gap

2009-01-01T23:59:59.000Z

355

A kinetic model of diamond nucleation and silicon carbide interlayer formation during chemical vapor deposition  

E-Print Network [OSTI]

A kinetic model of diamond nucleation and silicon carbide interlayer formation during chemical February 2005 Available online 7 April 2005 Abstract The presence of thin silicon carbide intermediate of carbon atoms into the silicon carbide layer and the morphology and orientation of the diamond film

Dandy, David

356

The Vapor Deposition and Oxidation of Platinum-and Yttria-Stabilized Zirconia Multilayers  

E-Print Network [OSTI]

rates by disrupting thermal transport processes. Novel metal­ceramic multilayer's combining thin metal layers with low thermal conductivity oxide ceramics offer a potential approach for impeding both­200-mm-thick low thermal conductivity ceramic outer layer (the top coat), a 10­20-mm-thick, aluminum

Wadley, Haydn

357

A conformal nano-adhesive via initiated chemical vapor deposition for microfluidic devices  

E-Print Network [OSTI]

(ethylene terephthalate) (PET), polycarbonate (PC), and poly(tetrafluoro ethylene) (PTFE). Introduction Microfluidic consumption of reagents and analytes, low cost of manufacture, low consumption of power, high throughput

Doyle, Patrick S.

358

Chemical Vapor Deposition Based Synthesis of Carbon Nanotubes and Nanofibers Using a Template Method  

E-Print Network [OSTI]

of battery electrodes.5,10 These microtubular TiS2 electrodes show higher capacities, lower resistance,19 including electrochemistry.20 The use of metal catalysts such as Ni, Fe, Fe-Cu, and Pt has been, and lower susceptibility to slow electron- transfer kinetics than thin film TiS2 electrodes. In the present

359

Polymers via chemical vapor deposition and their application to organic photovoltaics  

E-Print Network [OSTI]

There is emerging interest in the ability to fabricate organic photovoltaics (OPVs) on flexible, lightweight substrates, which could lower the cost of installation and enable new form factors for deployment. However, ...

Barr, Miles Clark

2012-01-01T23:59:59.000Z

360

Control of carbon nanotube growth directions and morphology by direct current plasma enhanced chemical vapor deposition  

E-Print Network [OSTI]

Pierard, A. Fonseca, Z. Konya, I. Willems, G. Van Tendeloo,D. Mehn, G. Galbaes, Z. Konya, I. Kiricsi, Catal. Today 76,

AuBuchon, Joseph Francis

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Reactor design for uniform chemical vapor deposition-grown films without substrate rotation  

DOE Patents [OSTI]

A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.

Wanlass, Mark (Golden, CO)

1987-01-01T23:59:59.000Z

362

Reactor design for uniform chemical vapor deposition-grown films without substrate rotation  

DOE Patents [OSTI]

A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.

Wanlass, M.

1985-02-19T23:59:59.000Z

363

Lithium manganese oxide films fabricated by electron beam directed vapor deposition  

E-Print Network [OSTI]

material for high energy den- sity battery applications.7,8 Lithium­transition metal oxide films can.2. After annealing in air at 700 °C, thin films grown with a low jet speed had a cubic spinel structure Li/Li-ion batteries. © 2008 American Vacuum Society. DOI: 10.1116/1.2823488 I. INTRODUCTION Thin film

Wadley, Haydn

364

Towards improved spinnability of chemical vapor deposition generated multi-walled carbon nanotubes  

E-Print Network [OSTI]

60 2.3.1.3 Unaligned Ceramic Matrix10 wt%. 2.3.1.3 Unaligned Ceramic Matrix Composites Ceramic-ceramic with approximate composition of 55% fluorophlogopite mica in a borosilicate glass matrix,

McKee, Gregg Sturdivant Burke

2008-01-01T23:59:59.000Z

365

Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition  

DOE Patents [OSTI]

Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

Han, Jung (Woodbridge, CT); Su, Jie (New Haven, CT)

2008-08-05T23:59:59.000Z

366

Growth of magnesium oxide thin lms using single molecular precursors by metalorganic chemical vapor deposition  

E-Print Network [OSTI]

Growth of magnesium oxide thin ®lms using single molecular precursors by metal±organic chemical precursors; Silicon; Sapphire 1. Introduction Magnesium oxide (MgO) thin ®lms have attracted much attention MgO ®lms on Si(100) above 6508C by thermal CVD. Murayama and Shionoya [12] used magnesium 2

Boo, Jin-Hyo

367

Prevention of biofouling in seawater desalination via initiated chemical vapor deposition (iCVD)  

E-Print Network [OSTI]

Biofouling, the undesirable settlement and growth of organisms, occurs immediately when a clean surface is immersed in natural seawater. It is a universal problem and the bottleneck for seawater desalination, which reduces ...

Yang, Rong, Ph. D. Massachusetts Institute of Technology

2014-01-01T23:59:59.000Z

368

Selective Chemical Vapor Deposition of Manganese Self-Aligned Capping Layer for Cu Interconnections  

E-Print Network [OSTI]

could not be broken apart. This Mn-enhanced binding strength of Cu to insulators is observed for all and nitrides. An adhesive tape is usually sufficient to remove copper films from these surfaces. Quantitative reliability because cobalt on the dielectric can increase leakage and lower the breakdown voltage.4 Cobalt

369

Titanium Diboride Thin Films by Low-Temperature Chemical Vapor Deposition from the Single Source Precursor  

E-Print Network [OSTI]

metallic ceramic whose properties surpass those of transition metal nitride and carbide counterparts:1, and excellent corrosion resistance toward molten metals. In addition, it has a low electrical resistivity of 6 µ

Girolami, Gregory S.

370

Volatilities of Actinide and Lanthanide N,NDimethylaminodiboranate Chemical Vapor Deposition  

E-Print Network [OSTI]

,§ Gregory S. Girolami,*,§ Christopher J. Cramer, and Laura Gagliardi*, Department of Chemistry volatile forms during sublimation. INTRODUCTION Lanthanide-containing materials, such as lanthanide oxides

Girolami, Gregory S.

371

Porous GaN nanowires synthesized using thermal chemical vapor deposition  

E-Print Network [OSTI]

Seo a , Jeunghee Park a,*, Hyunik Yang b , Bongsoo Kim c a Department of Chemistry, Korea University-791, Republic of Korea c Department of Chemistry, Korea Advanced Institute of Science and Technology, Daejeon nanotube-confined reaction [4], arc discharge [5], laser ablation [6], sublimation [7], pyrolysis [8

Kim, Bongsoo

372

Microbridge testing of plasma-enhanced chemical-vapor deposited silicon oxide films on silicon wafers  

E-Print Network [OSTI]

that is typically encountered in applications involving microelectromechanical systems (MEMS.016212 PACS number(s): 05.45.-a, 85.85.+j, 62.25.-g, 47.52.+j I. INTRODUCTION Microelectromechanical systems

373

Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition  

E-Print Network [OSTI]

Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO[subscript 2] substrate. The properties and integration of these graphene-on-insulator transistors are presented and ...

Keast, Craig L.

374

Low Temperature Chemical Vapor Deposition of Zirconium Nitride in a Fluidized Bed  

E-Print Network [OSTI]

thick) on uranium-molybdenum (UMo) particulate fuel. Plate-type fuel with U-xMo (x = 3 to 10 wt.%) particle fuel dispersed in an aluminum matrix is under development at Idaho National Laboratory (INL) for the Reduced Enrichment for Research and Test...

Arrieta, Marie

2012-10-19T23:59:59.000Z

375

In-situ formation of multiphase electron beam physical vapor deposited barrier coatings for turbine components  

DOE Patents [OSTI]

A turbine component (10), such as a turbine blade, is provided which is made of a metal alloy (22) and a base columnar thermal barrier coating (20) on the alloy surface, where a heat resistant ceramic oxide sheath material (32' or 34') covers the columns (28), and the sheath material is the reaction product of a precursor ceramic oxide sheath material and the base thermal barrier coating material.

Subramanian, Ramesh (Oviedo, FL)

2001-01-01T23:59:59.000Z

376

Chemical vapor deposition and functionalization of fluorocarbon-organosilicon copolymer thin films  

E-Print Network [OSTI]

Neural prostheses are micron-scale integrated circuit devices that are under development for the treatment of brain and spinal cord injuries. A key challenge in the fabrication of these silicon- based devices is the ...

Murthy, Shashi Krishna, 1977-

2003-01-01T23:59:59.000Z

377

Perfluorooctane Sulfonyl Fluoride as an Initiator in Hot-Filament Chemical Vapor Deposition of Fluorocarbon  

E-Print Network [OSTI]

of Fluorocarbon Thin Films Hilton G. Pryce Lewis, Jeffrey A. Caulfield, and Karen K. Gleason*, Department pathways available via HFCVD makes it possible to produce polymeric fluorocarbon films spectroscopically

Gleason, Karen K.

378

System and Method for Sealing a Vapor Deposition Source - Energy Innovation  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystallineForeign Object Damage 3Nationalmimic key

379

Metalorganic chemical vapor deposition of carbon-free ZnO using the  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces andMapping theEnergy StorageAdvanced

380

NREL: Awards and Honors - High-Rate Vapor Transport Deposition for CdTe PV  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the Contributions and Achievements of Women |hits 21Species.4Electroexploded

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Parallel Reacting Flow Calculations for Chemical Vapor Deposition Reactor Design 1  

E-Print Network [OSTI]

, memory, and scalability of distributed memory parallel computers. An unstructured finite element transport from the fluid mechanics and heat transfer. Both works used solution procedures that require the reacting flow model and numerical method and summarize representative calculations using MPSalsa

Devine, Karen

382

Thermally induced dispersion mechanisms for aluminum-based plate-type fuels under rapid transient energy deposition  

SciTech Connect (OSTI)

A thermally induced dispersion model was developed to analyze for dispersive potential and determine onset of fuel plate dispersion for Al-based research and test reactor fuels. Effect of rapid energy deposition in a fuel plate was simulated. Several data types for Al-based fuels tested in the Nuclear Safety Research Reactor in Japan and in the Transient Reactor Test in Idaho were reviewed. Analyses of experiments show that onset of fuel dispersion is linked to a sharp rise in predicted strain rate, which futher coincides with onset of Al vaporization. Analysis also shows that Al oxidation and exothermal chemical reaction between the fuel and Al can significantly affect the energy deposition characteristics, and therefore dispersion onset connected with Al vaporization, and affect onset of vaporization.

Georgevich, V.; Taleyarkham, R.P.; Navarro-Valenti, S.; Kim, S.H.

1995-12-31T23:59:59.000Z

383

Method and apparatus for concentrating vapors for analysis  

DOE Patents [OSTI]

A pre-concentration device and a method are disclosed for concentrating gaseous vapors for analysis. Vapors sorbed and concentrated within the bed of the pre-concentration device are thermally desorbed, achieving at least partial separation of the vapor mixtures. The pre-concentration device is suitable, e.g., for pre-concentration and sample injection, and provides greater resolution of peaks for vapors within vapor mixtures, yielding detection levels that are 10-10,000 times better than direct sampling and analysis systems. Features are particularly useful for continuous unattended monitoring applications. The invention finds application in conjunction with, e.g., analytical instruments where low detection limits for gaseous vapors are desirable.

Grate, Jay W. (West Richland, WA); Baldwin, David L. (Kennewick, WA); Anheier, Jr., Norman C. (Richland, WA)

2012-06-05T23:59:59.000Z

384

Vapor port and groundwater sampling well  

DOE Patents [OSTI]

A method and apparatus has been developed for combining groundwater monitoring wells with unsaturated-zone vapor sampling ports. The apparatus allows concurrent monitoring of both the unsaturated and the saturated zone from the same well at contaminated areas. The innovative well design allows for concurrent sampling of groundwater and volatile organic compounds (VOCs) in the vadose (unsaturated) zone from a single well, saving considerable time and money. The sample tubes are banded to the outer well casing during installation of the well casing.

Hubbell, Joel M. (Idaho Falls, ID); Wylie, Allan H. (Idaho Falls, ID)

1996-01-01T23:59:59.000Z

385

Storing images in warm atomic vapor  

E-Print Network [OSTI]

Reversible and coherent storage of light in atomic medium is a key-stone of future quantum information applications. In this work, arbitrary two-dimensional images are slowed and stored in warm atomic vapor for up to 30 $\\mu$s, utilizing electromagnetically induced transparency. Both the intensity and the phase patterns of the optical field are maintained. The main limitation on the storage resolution and duration is found to be the diffusion of atoms. A techniqueanalogous to phase-shift lithography is employed to diminish the effect of diffusion on the visibility of the reconstructed image.

M. Shuker; O. Firstenberg; R. Pugatch; A. Ron; N. Davidson

2008-06-17T23:59:59.000Z

386

Vapor port and groundwater sampling well  

DOE Patents [OSTI]

A method and apparatus have been developed for combining groundwater monitoring wells with unsaturated-zone vapor sampling ports. The apparatus allows concurrent monitoring of both the unsaturated and the saturated zone from the same well at contaminated areas. The innovative well design allows for concurrent sampling of groundwater and volatile organic compounds (VOCs) in the vadose (unsaturated) zone from a single well, saving considerable time and money. The sample tubes are banded to the outer well casing during installation of the well casing. 10 figs.

Hubbell, J.M.; Wylie, A.H.

1996-01-09T23:59:59.000Z

387

Mercury Vapor (Kooten, 1987) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 - 429Lacey,(MonasterLowellisMcDonald isMelletteEnclosed andEnergySolar SystemsVapor

388

Review of enhanced vapor diffusion in porous media  

SciTech Connect (OSTI)

Vapor diffusion in porous media in the presence of its own liquid has often been treated similar to gas diffusion. The gas diffusion rate in porous media is much lower than in free space due to the presence of the porous medium and any liquid present. However, enhanced vapor diffusion has also been postulated such that the diffusion rate may approach free-space values. Existing data and models for enhanced vapor diffusion, including those in TOUGH2, are reviewed in this paper.

Webb, S.W.; Ho, C.K.

1998-08-01T23:59:59.000Z

389

Recovery of benzene in an organic vapor monitor  

E-Print Network [OSTI]

solid adsorbents available (silica gel, activated alumina, etc. ), activated charcoal is most frequently utilized. Activated charcoal has retentivity for sorbed vapors several times that of silica gel and it displays a selectivity for organic vapors... (diffusion rate) of the vapor molecules to the sur- face of the adsorbent. The adsorption process determine how effective the adsorbent collects and holds the contam- inant on the surface of the activated charcoal. Recovery of the contaminant from...

Krenek, Gregory Joel

1980-01-01T23:59:59.000Z

390

Vaporizer design criteria for ethanol fueled internal combustion engines  

E-Print Network [OSTI]

. Stout (Member) L r x ge Edwa d A. Hiler (Head of Department) May 1985 ABSTRACT Vaporizer Design Criteria For Ethanol Fueled Internal Combustion Engines. (May 1985) Arachchi Rallage Ariyaratne, B. S. , University of Sri Lanka Chairman... VAPORIZATION LENGTH WITH UNIFORM HEAT FLUX 8 POLYNOMIAL FUNCTIONS FOR EVALUATING PARAMETERS C VARIATION OF HEAT FLUX AND AVERAGE SURFACE TEMPARATURE D PROGRAM FOR PREDICTING VAPORIZATION LENGTH 73 75 78 80 VITA 87 LIST OF TABLES TABLE Page 1...

Ariyaratne, Arachchi Rallage

2012-06-07T23:59:59.000Z

391

Method for controlling corrosion in thermal vapor injection gases  

DOE Patents [OSTI]

An improvement in the method for producing high pressure thermal vapor streams from combustion gases for injection into subterranean oil producing formations to stimulate the production of viscous minerals is described. The improvement involves controlling corrosion in such thermal vapor gases by injecting water near the flame in the combustion zone and injecting ammonia into a vapor producing vessel to contact the combustion gases exiting the combustion chamber.

Sperry, John S. (Houston, TX); Krajicek, Richard W. (Houston, TX)

1981-01-01T23:59:59.000Z

392

Wachs Cutter Tooling Station (4495)  

Broader source: Energy.gov (indexed) [DOE]

purchase, build and install Wachs cutter tooling. The Wachs Cutter Tooling Station is similar to previously operated facility tooling and will utilize an existing hydraulic unit....

393

Unsteady, high Reynolds number validation cases for a multi-phase CFD analysis tool have been  

E-Print Network [OSTI]

and constituent volume fraction transport/generation for liquid, condensable vapor and non-condensable gas fields1 Abstract Unsteady, high Reynolds number validation cases for a multi-phase CFD analysis tool have of the effect of cavitation number, Reynolds number and turbulence model has been made. Analysis of the modeled

Kunz, Robert Francis

394

Mercury Vapor At Lassen Volcanic National Park Area (Varekamp...  

Open Energy Info (EERE)

Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Lassen Volcanic National Park Area (Varekamp & Buseck, 1983) Exploration...

395

PPPL-3270, Reprint: October 1997, UC-420, 421, 423 Development of Lithium Deposition Techniques for TFTR*  

E-Print Network [OSTI]

and operational options. Two additional lithium deposition tools were developed for p o s s i b l e application during the 1996 Experimental Schedule: a solid lithium target probe for real-time deposition interesting experimental and operational options. This motivated developmental work on two additional lithium

396

The control of confined vapor phase explosions  

SciTech Connect (OSTI)

The probability of, for example, a fire or explosion occurring during a process operation is related both to the fire-related properties of the materials used, such as flash point, flammable limits etc., i.e. the material or intrinsic factors, and the nature of the operation and the equipment used, i.e. the extrinsic factors. The risk, or frequency of occurrence, of other hazards such as reaction runaway, major toxic release etc. can be determined in a similar manner. For a vapor phase explosion (and a fire) the probability of the event is the product of the probability of generating a flammable atmosphere and the probability of ignition. Firstly, materials may be coded using properties that are relevant to the hazard in question. Secondly, different operations have different degrees of risk and these risks are assigned as Low, Medium, High etc. according to criteria outlined here. Combination of these two factors will then be a measure of the overall risk of the operation with the specified material and may be used to define operating standards. Currently, the hazard/risk of a vapor phase explosions is examined by this method but in due course dust explosions, fires, condensed phase explosions, reaction runaways, physical explosions, major toxic releases and incompatibility will be included.

Scilly, N.F. [Laporte plc, Widnes (United Kingdom); Owen, O.J.R. [Fine Organics, Ltd., Middlesborough (United Kingdom); Wilberforce, J.K. [Solvay SA, Brussels (Belgium)

1995-12-31T23:59:59.000Z

397

Machine tool locator  

DOE Patents [OSTI]

Machine tools can be accurately measured and positioned on manufacturing machines within very small tolerances by use of an autocollimator on a 3-axis mount on a manufacturing machine and positioned so as to focus on a reference tooling ball or a machine tool, a digital camera connected to the viewing end of the autocollimator, and a marker and measure generator for receiving digital images from the camera, then displaying or measuring distances between the projection reticle and the reference reticle on the monitoring screen, and relating the distances to the actual position of the autocollimator relative to the reference tooling ball. The images and measurements are used to set the position of the machine tool and to measure the size and shape of the machine tool tip, and examine cutting edge wear. patent

Hanlon, John A. (Los Alamos, NM); Gill, Timothy J. (Stanley, NM)

2001-01-01T23:59:59.000Z

398

Certification Status Search Tool  

E-Print Network [OSTI]

Certification Status Search Tool (SB/DVBE) Illustrated User Manual #12;2 Certification Status Search Tool (SB/DVBE) Rev. 5/14/09 Copyright © 2008 RFP Depot, LLC dba BidSync All Rights Reserved://www.bidsync.com #12;3 Certification Status Search Tool (SB/DVBE) Rev. 5/14/09 Introduction BidSync is a powerful e

399

Vapor and gas sampling of Single-Shell Tank 241-T-111 using the vapor sampling system  

SciTech Connect (OSTI)

This document presents sampling data resulting from the January 20, 1995, sampling of SST 241-T-111 using the vapor sampling system.

Caprio, G.S.

1995-09-01T23:59:59.000Z

400

Vapor and gas sampling of single-shell tank 241-BY-112 using the vapor sampling system  

SciTech Connect (OSTI)

This document presents sampling data from the November 18, 1994, sampling of SST 241-BY-112 using the vapor sampling system.

Caprio, G.S.

1995-09-20T23:59:59.000Z

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Vapor and gas sampling of Single-Shell Tank 241-A-101 using the Vapor Sampling System  

SciTech Connect (OSTI)

This document presents sampling data resulting from the June 8, 1995, sampling of SST 241-A-101 using the Vapor Sampling System.

Caprio, G.S.

1995-11-01T23:59:59.000Z

402

BlackboardSectioningTool Course Sectioning The Sectioning Tool  

E-Print Network [OSTI]

sectioning tool: Consult the online help provided within the sectioning tool Call the OIT Help Desk at (609 by those preferences, select Enable/Configure Student Preference Tool. Need help using the BlackboardBlackboardSectioningTool Course Sectioning 1 The Sectioning Tool The Sectioning Tool is a course

Bou-Zeid, Elie

403

Glass softening, crystallization, and vaporization of nano-aggregates of Amorphous Solid Water: Fast Scanning Calorimetry studies  

E-Print Network [OSTI]

Fast scanning calorimetry (FSC) was employed to investigate glass softening dynamics in amorphous solid water (ASW) nano-aggregates with thicknesses ranging from 2 to 20 nm. ASW nano-aggregates were prepared by vapor-deposition on the surface of a tungsten filament near 141 K and then heated at a rate of 100 kK/s. The resulting thermogram complex endo- and exothermal features were analyzed using a simple model. The results of the analysis show that glass softening of ASW nano-aggregates takes place at 160 K and vaporization of ASW nano-aggregates can take place at temperatures as low as 185 K. The results of these studies are discussed in conjunction with results of past studies of glass softening dynamics in water in various confining geometries.

Deepanjan Bhattacharya; Liam OReilly; Vlad Sadtchenko

2014-10-31T23:59:59.000Z

404

Manifold tool guide  

DOE Patents [OSTI]

A tool guide is described that makes possible the insertion of cleaning and/or inspection tools into a manifold pipe that will dislocate and extract the accumulated sediment in such manifold pipes. The tool guide basically comprises a right angled tube (or other angled tube as required) which can be inserted in a large tube and locked into a radially extending cross pipe by adjustable spacer rods and a spring-loaded cone, whereby appropriate cleaning tools can be inserted into the cross pipe for cleaning, inspection, etc. 3 figs.

Djordjevic, A.

1983-12-27T23:59:59.000Z

405

Manifold tool guide  

DOE Patents [OSTI]

A tool guide that makes possible the insertion of cleaning and/or inspection tools into a manifold pipe that will dislocate and extract the accumulated sediment in such manifold pipes. The tool guide basically comprises a right angled tube (or other angled tube as required) which can be inserted in a large tube and locked into a radially extending cross pipe by adjustable spacer rods and a spring-loaded cone, whereby appropriate cleaning tools can be inserted into to cross pipe for cleaning, inspection, etc.

Djordjevic, A.

1982-07-08T23:59:59.000Z

406

Manifold tool guide  

DOE Patents [OSTI]

A tool guide that makes possible the insertion of cleaning and/or inspection tools into a manifold pipe that will dislocate and extract the accumulated sediment in such manifold pipes. The tool guide basically comprises a right angled tube (or other angled tube as required) which can be inserted in a large tube and locked into a radially extending cross pipe by adjustable spacer rods and a spring-loaded cone, whereby appropriate cleaning tools can be inserted into to cross pipe for cleaning, inspection, etc.

Djordjevic, Aleksandar (Thousand Oaks, CA)

1983-12-27T23:59:59.000Z

407

Wireline logging tool catalog  

SciTech Connect (OSTI)

This book provides discussions on wireline logging tools. The contents are resistivity, radioactivity, acoustic, formation dip and borehold geometry, formation sampling, and auxiliary services.

Verdier, M.

1986-01-01T23:59:59.000Z

408

RESONANT FARADAY ROTATION IN A HOT LITHIUM VAPOR  

E-Print Network [OSTI]

RESONANT FARADAY ROTATION IN A HOT LITHIUM VAPOR By SCOTT RUSSELL WAITUKAITIS A Thesis Submitted: #12;Abstract I describe a study of Faraday rotation in a hot lithium vapor. I begin by dis- cussing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.3 The Lithium Oven and Solenoid . . . . . . . . . . . . . . . . . 7 3 Theoretical Framework

Cronin, Alex D.

409

Isotopic composition of stratospheric water vapor: Measurements and photochemistry  

E-Print Network [OSTI]

of magnitude between the surface and the tropopause, and isotopically heavy water is pref- erentially removedIsotopic composition of stratospheric water vapor: Measurements and photochemistry David G. Johnson composition of stratospheric water vapor that result from methane oxidation and reactions with O( ¢¡ ). We

410

Chemical vapor detection with a multispectral thermal imager  

E-Print Network [OSTI]

Chemical vapor detection with a multispectral thermal imager Mark 1. G. Aithouse, MEMBER SPIE U.S. Army Chemical Research Development and Engineering Center SMCCR-DDT Aberdeen Proving Ground, Maryland algorithm 7. Conclusions 8. Acknowledgments 9. References 1. INTRODUCTION Detection of chemical vapor clouds

Chang, Chein-I

411

Informal Report . VAPOR DETECTION OF TRAFFICKING OF CONTRABAND MONEY-  

E-Print Network [OSTI]

I BNL- 62834 Informal Report . VAPOR DETECTION OF TRAFFICKING OF CONTRABAND MONEY-· [D VAPOR DETECTION OF TRAFFICKING OF CONTRABAND MONEY- A DISCUSSION OF TECHNICAL FEASIBILITY Concept MONEY --A DISCUSSION OF TECHNICAL FEASffiILITY Russell N. Dietz, Head Tracer Technology Center

412

Temperature dependent vapor pressures of chlorinated catechols, syringols, and syringaldehydes  

SciTech Connect (OSTI)

The vapor pressures of nine chlorinated catechols, syringols, and syringaldehydes were determined as a function of temperature with a gas chromatographic retention time technique. The vapor pressures at 298.15 K were in the range of 0.02--1 Pa, and the enthalpies of vaporization, between 68 and 82 kJ/mol. The validity of the technique was established by a calibration involving four chlorinated phenols with well-known vapor pressures. Using these data and previously reported solubility data, Henry`s law constants for these substances and some chlorinated guaiacols and veratrols were estimated. The vapor pressure of these substances tends to decrease with increasing polarity and an increasing number of chlorine atoms. Henry`s law constants decrease sharply with increasing polarity, suggesting that methylation can result in a significant increase in a chemical`s potential for volatilization from water.

Lei, Y.D.; Shiu, W.Y.; Boocock, D.G.B. [Univ. of Toronto, Ontario (Canada). Dept. of Chemical Engineering and Applied Chemistry] [Univ. of Toronto, Ontario (Canada). Dept. of Chemical Engineering and Applied Chemistry; Wania, F. [WECC Wania Environmental Chemists Corp., Toronto, Ontario (Canada)] [WECC Wania Environmental Chemists Corp., Toronto, Ontario (Canada)

1999-03-01T23:59:59.000Z

413

Analysis of electron-beam vaporization of refractory metals  

SciTech Connect (OSTI)

An electron beam is focussed onto a small area on the surface of a refractory metal to locally raise the temperature and vaporize metal. At high vaporization rates the hot area is on the surface of a churning liquid-metal pool contained in a solid-metal skull which sits in a cooled crucible. Inner workings of the process are revealed by analysis of momentum, energy, and mass transfer. At the surface high temperature causes high vaporization rate and high vapor thrust, depressing the vapor/liquid surface. In the liquid pool surface-tension gradients and thermal buoyancy drive a (typically) chaotic flow. In the solid skull thermal conductivity and contact resistance regulate the rate of heat transfer from pool to crucible. Analyses of these phenomena together reveal process performance sensitivities - e.g., to depression size or to magnitude of surface-tension gradients. 12 refs., 3 figs.

Kheshgi, H.S.; Gresho, P.M.

1986-09-01T23:59:59.000Z

414

Fluid sampling tool  

DOE Patents [OSTI]

The invention includes a rotatable tool for collecting fluid through the wall of a container. The tool includes a fluid collection section with a cylindrical shank having an end portion for drilling a hole in the container wall when the tool is rotated, and a threaded portion for tapping the hole in the container wall. A passageway in the shank in communication with at least one radial inlet hole in the drilling end and an opening at the end of the shank is adapted to receive fluid from the container. The tool also includes a cylindrical chamber affixed to the end of the shank opposite to the drilling portion thereof for receiving and storing fluid passing through the passageway. The tool also includes a flexible, deformable gasket that provides a fluid-tight chamber to confine kerf generated during the drilling and tapping of the hole. The invention also includes a fluid extractor section for extracting fluid samples from the fluid collecting section.

Johnston, Roger G. (Los Alamos, NM); Garcia, Anthony R. E. (Espanola, NM); Martinez, Ronald K. (Santa Cruz, NM)

2001-09-25T23:59:59.000Z

415

Monitoring of vapor phase polycyclic aromatic hydrocarbons  

DOE Patents [OSTI]

An apparatus for monitoring vapor phase polycyclic aromatic hydrocarbons in a high-temperature environment has an excitation source producing electromagnetic radiation, an optical path having an optical probe optically communicating the electromagnetic radiation received at a proximal end to a distal end, a spectrometer or polychromator, a detector, and a positioner coupled to the first optical path. The positioner can slidably move the distal end of the optical probe to maintain the distal end position with respect to an area of a material undergoing combustion. The emitted wavelength can be directed to a detector in a single optical probe 180.degree. backscattered configuration, in a dual optical probe 180.degree. backscattered configuration or in a dual optical probe 90.degree. side scattered configuration. The apparatus can be used to monitor an emitted wavelength of energy from a polycyclic aromatic hydrocarbon as it fluoresces in a high temperature environment.

Vo-Dinh, Tuan; Hajaligol, Mohammad R.

2004-06-01T23:59:59.000Z

416

Kinetics of wet sodium vapor complex plasma  

SciTech Connect (OSTI)

In this paper, we have investigated the kinetics of wet (partially condensed) Sodium vapor, which comprises of electrons, ions, neutral atoms, and Sodium droplets (i) in thermal equilibrium and (ii) when irradiated by light. The formulation includes the balance of charge over the droplets, number balance of the plasma constituents, and energy balance of the electrons. In order to evaluate the droplet charge, a phenomenon for de-charging of the droplets, viz., evaporation of positive Sodium ions from the surface has been considered in addition to electron emission and electron/ion accretion. The analysis has been utilized to evaluate the steady state parameters of such complex plasmas (i) in thermal equilibrium and (ii) when irradiated; the results have been graphically illustrated. As a significant outcome irradiated, Sodium droplets are seen to acquire large positive potential, with consequent enhancement in the electron density.

Mishra, S. K., E-mail: nishfeb@rediffmail.com [Institute for Plasma Research (IPR), Gandhinagar 382428 (India); Sodha, M. S. [Centre of Energy Studies, Indian Institute of Technology Delhi (IITD), New Delhi 110016 (India)] [Centre of Energy Studies, Indian Institute of Technology Delhi (IITD), New Delhi 110016 (India)

2014-04-15T23:59:59.000Z

417

OOTW Force Design Tools  

SciTech Connect (OSTI)

This report documents refined requirements for tools to aid the process of force design in Operations Other Than War (OOTWs). It recommends actions for the creation of one tool and work on other tools relating to mission planning. It also identifies the governmental agencies and commands with interests in each tool, from whom should come the user advisory groups overseeing the respective tool development activities. The understanding of OOTWs and their analytical support requirements has matured to the point where action can be taken in three areas: force design, collaborative analysis, and impact analysis. While the nature of the action and the length of time before complete results can be expected depends on the area, in each case the action should begin immediately. Force design for OOTWs is not a technically difficult process. Like force design for combat operations, it is a process of matching the capabilities of forces against the specified and implied tasks of the operation, considering the constraints of logistics, transport and force availabilities. However, there is a critical difference that restricts the usefulness of combat force design tools for OOTWs: the combat tools are built to infer non-combat capability requirements from combat capability requirements and cannot reverse the direction of the inference, as is required for OOTWs. Recently, OOTWs have played a larger role in force assessment, system effectiveness and tradeoff analysis, and concept and doctrine development and analysis. In the first Quadrennial Defense Review (QDR), each of the Services created its own OOTW force design tool. Unfortunately, the tools address different parts of the problem and do not coordinate the use of competing capabilities. These tools satisfied the immediate requirements of the QDR, but do not provide a long-term cost-effective solution.

Bell, R.E.; Hartley, D.S.III; Packard, S.L.

1999-05-01T23:59:59.000Z

418

Hybrid Vapor Compression Adsorption System: Thermal Storage Using Hybrid Vapor Compression Adsorption System  

SciTech Connect (OSTI)

HEATS Project: UTRC is developing a new climate-control system for EVs that uses a hybrid vapor compression adsorption system with thermal energy storage. The targeted, closed system will use energy during the battery-charging step to recharge the thermal storage, and it will use minimal power to provide cooling or heating to the cabin during a drive cycle. The team will use a unique approach of absorbing a refrigerant on a metal salt, which will create a lightweight, high-energy-density refrigerant. This unique working pair can operate indefinitely as a traditional vapor compression heat pump using electrical energy, if desired. The project will deliver a hot-and-cold battery that provides comfort to the passengers using minimal power, substantially extending the driving range of EVs.

None

2012-01-04T23:59:59.000Z

419

Gas Separation Using Organic-Vapor-Resistent Membranes In Conjunctin With Organic-Vapor-Selective Membranes  

DOE Patents [OSTI]

A process for treating a gas mixture containing at least an organic compound gas or vapor and a second gas, such as natural gas, refinery off-gas or air. The process uses two sequential membrane separation steps, one using membrane selective for the organic compound over the second gas, the other selective for the second gas over the organic vapor. The second-gas-selective membranes use a selective layer made from a polymer having repeating units of a fluorinated polymer, and demonstrate good resistance to plasticization by the organic components in the gas mixture under treatment, and good recovery after exposure to liquid aromatic hydrocarbons. The membrane steps can be combined in either order.

Baker, Richard W. (Palo Alto, CA); Pinnau, Ingo (Palo Alto, CA); He, Zhenjie (Fremont, CA); Da Costa, Andre R. (Menlo Park, CA); Daniels, Ramin (San Jose, CA); Amo, Karl D. (Mountain View, CA); Wijmans, Johannes G. (Menlo Park, CA)

2003-06-03T23:59:59.000Z

420

Uranium deposits of Brazil  

SciTech Connect (OSTI)

Brazil is a country of vast natural resources, including numerous uranium deposits. In support of the country`s nuclear power program, Brazil has developed the most active uranium industry in South America. Brazil has one operating reactor (Angra 1, a 626-MWe PWR), and two under construction. The country`s economic challenges have slowed the progress of its nuclear program. At present, the Pocos de Caldas district is the only active uranium production. In 1990, the Cercado open-pit mine produced approximately 45 metric tons (MT) U{sub 3}O{sub 8} (100 thousand pounds). Brazil`s state-owned uranium production and processing company, Uranio do Brasil, announced it has decided to begin shifting its production from the high-cost and nearly depleted deposits at Pocos de Caldas, to lower-cost reserves at Lagoa Real. Production at Lagoa Real is schedules to begin by 1993. In addition to these two districts, Brazil has many other known uranium deposits, and as a whole, it is estimated that Brazil has over 275,000 MT U{sub 3}O{sub 8} (600 million pounds U{sub 3}O{sub 8}) in reserves.

NONE

1991-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Simultaneous fog formation and thermophoretic droplet deposition in a turbulent pipe flow  

SciTech Connect (OSTI)

Simultaneous aerosol formation by equilibrium condensation and the migration of the resulting droplets to the cold surface by thermophoresis is studied theoretically for a turbulent pipe flow. The problem is one in which a mixture of a vapor and noncondensable gas flows into a section of pipe where the pipe wall is cooled to below the dew point of the vapor. Because the temperature gradient at the pipe wall decays to zero once the gas travels far enough into the pipe, only some fraction of the droplets formed will deposit on the pipe wall. The equations of energy and diffusion suggest that turbulence leads to a discontinuity in the aerosol (fog) concentration at the boundary between the fog and clear regions. Numerical solutions are obtained for CsOH fog formation and deposition in steam flow, a particular case of current practical interest in water reactor safety. The axial and radial variations of the aerosol and vapor concentrations are displayed graphically, as are the location of the fog boundary as a function of axial distance and the efficiency of deposition as a function of the pipe wall temperature.

Epstein, M.; Hauser, G.M. (Fauske and Associates, Inc., Burr Ridge, IL (USA))

1991-02-01T23:59:59.000Z

422

M. Bahrami ENSC 461 (S 11) Vapor Power Cycles 1 Vapor Power Cycles  

E-Print Network [OSTI]

is not a suitable model for steam power cycle since: The turbine has to handle steam with low quality which steam is condensed in the condenser 4 3 1 2 s T 1 2 34 s #12;M. Bahrami ENSC 461 (S 11) Vapor Power = 0 qin = h3 ­ h2 Turbine q = 0 wturbine,out = h3 ­ h4 Condenser w = 0 qout = h4 ­ h1 The thermal

Bahrami, Majid

423

Oxidation of Slurry Aluminide Coatings on Cast Stainless Steel Alloy CF8C-Plus at 800oC in Water Vapor  

SciTech Connect (OSTI)

A new, cast austenitic stainless steel, CF8C-Plus, has been developed for a wide range of high temperature applications, including diesel exhaust components, turbine casings and turbocharger housings. CF8C-Plus offers significant improvements in creep rupture life and creep rupture strength over standard CF8C steel. However, at higher temperatures and in more aggressive environments, such as those containing significant water vapor, an oxidation-resistant protective coating will be necessary. The oxidation behavior of alloys CF8C and CF8C-Plus with various aluminide coatings were compared at 800oC in air plus 10 vol% water vapor. Due to their affordability, slurry aluminides were the primary coating system of interest, although chemical vapor deposition (CVD) and pack cementation coatings were also compared. Additionally, a preliminary study of the low cycle fatigue behavior of aluminized CF8C-Plus was conducted at 800oC. Each type of coating provided substantial improvements in oxidation behavior, with simple slurry aluminides showing very good oxidation resistance after 4,000 h testing in water vapor. Preliminary low cycle fatigue results indicated that thicker aluminide coatings degraded high temperature fatigue properties of CF8C-Plus, whereas thinner coatings did not. Results suggest that appropriately designed slurry aluminide coatings are a viable option for economical, long-term oxidation protection of austenitic stainless steels in water vapor.

Haynes, James A [ORNL; Armstrong, Beth L [ORNL; Dryepondt, Sebastien N [ORNL; Kumar, Deepak [ORNL; Zhang, Ying [Tennessee Technological University

2013-01-01T23:59:59.000Z

424

E-Print Network 3.0 - aerosol-assisted chemical vapor Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Work to Prevent Chemical Warfare Agent Vapor Infiltration? John H. Sorensen Barbara M. Vogt Date... protection strategies to reduce exposure to vapors from chemical warfare...

425

E-Print Network 3.0 - atomic vapor laser Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

with the exception of pagination. IEEE TRANSACTIONS ON PLASMA SCIENCE 1 Summary: vapor, atomic physics and vapor ionization, absorption reflection in a heated plasma layer, and...

426

E-Print Network 3.0 - atom vapor cells Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

rotation in the vapor cell due to inten- sity-induced birefringence in the rubidium atomic vapor. While... Super efficient absorption filter for quantum memory using atomic...

427

Tools used for hand deburring  

SciTech Connect (OSTI)

This guide is designed to help in quick identification of those tools most commonly used to deburr hand size or smaller parts. Photographs and textual descriptions are used to provide rapid yet detailed information. The data presented include the Bendix Kansas City Division coded tool number, tool description, tool crib in which the tool can be found, the maximum and minimum inventory requirements, the cost of each tool, and the number of the illustration that shows the tool.

Gillespie, L.K.

1981-03-01T23:59:59.000Z

428

Friction stir welding tool  

DOE Patents [OSTI]

A friction stir welding tool is described and which includes a shank portion; a shoulder portion which is releasably engageable with the shank portion; and a pin which is releasably engageable with the shoulder portion.

Tolle, Charles R. (Idaho Falls, ID); Clark, Denis E. (Idaho Falls, ID); Barnes, Timothy A. (Ammon, ID)

2008-04-15T23:59:59.000Z

429

Sandia Modeling Tool Webinar  

Broader source: Energy.gov [DOE]

Hosted by the Energy Department and Western Area Power Administration, this webinar will show attendees about what collaborative, stakeholder-driven modeling is and how the modeling tools and process developed by Sandia can be used in Indian Country.

430

Smart tool holder  

DOE Patents [OSTI]

There is provided an apparatus for machining surfaces to accuracies within the nanometer range by use of electrical current flow through the contact of the cutting tool with the workpiece as a feedback signal to control depth of cut.

Day, Robert Dean (Los Alamos, NM); Foreman, Larry R. (Los Alamos, NM); Hatch, Douglas J. (Los Alamos, NM); Meadows, Mark S. (Boston, MA)

1998-01-01T23:59:59.000Z

431

UNIX Public Tools  

Broader source: Energy.gov [DOE]

SATAN, the System Administrator Tool for Analyzing Networks, is a network security analyzer designed by Dan Farmer and Wietse Venema. SATAN scans systems connected to the network noting the...

432

Minds, Brains and Tools   

E-Print Network [OSTI]

The selected texts for this discussion were two recent pieces by Dennett (“Things About Things” and “Making Tools for Thinking” – henceforth TAT and MTT respectively) and one oldie-but-goodie (“Styles of Mental Representation”, ...

Clark, Andy

2002-01-01T23:59:59.000Z

433

Deposition and Microfabrication | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest Region service area. The Desert Southwest RegionInsideDeposition and

434

Preliminary assessment of halogenated alkanes as vapor-phase tracers  

SciTech Connect (OSTI)

New tracers are needed to evaluate the efficiency of injection strategies in vapor-dominated environments. One group of compounds that seems to meet the requirements for vapor-phase tracing are the halogenated alkanes (HCFCs). HCFCs are generally nontoxic, and extrapolation of tabulated thermodynamic data indicate that they will be thermally stable and nonreactive in a geothermal environment. The solubilities and stabilities of these compounds, which form several homologous series, vary according to the substituent ratios of fluorine, chlorine, and hydrogen. Laboratory and field tests that will further define the suitability of HCFCs as vapor-phase tracers are under way.

Adams, Michael C.; Moore, Joseph N.; Hirtz, Paul

1991-01-01T23:59:59.000Z

435

Enhanced Attenuation Technologies: Passive Soil Vapor Extraction  

SciTech Connect (OSTI)

Passive soil vapor extraction (PSVE) is an enhanced attenuation (EA) approach that removes volatile contaminants from soil. The extraction is driven by natural pressure gradients between the subsurface and atmosphere (Barometric Pumping), or by renewable sources of energy such as wind or solar power (Assisted PSVE). The technology is applicable for remediating sites with low levels of contamination and for transitioning sites from active source technologies such as active soil vapor extraction (ASVE) to natural attenuation. PSVE systems are simple to design and operate and are more cost effective than active systems in many scenarios. Thus, PSVE is often appropriate as an interim-remedial or polishing strategy. Over the past decade, PSVE has been demonstrated in the U.S. and in Europe. These demonstrations provide practical information to assist in selecting, designing and implementing the technology. These demonstrations indicate that the technology can be effective in achieving remedial objectives in a timely fashion. The keys to success include: (1) Application at sites where the residual source quantities, and associated fluxes to groundwater, are relatively low; (2) Selection of the appropriate passive energy source - barometric pumping in cases with a deep vadose zone and barrier (e.g., clay) layers that separate the subsurface from the atmosphere and renewable energy assisted PSVE in other settings and where higher flow rates are required. (3) Provision of sufficient access to the contaminated vadose zones through the spacing and number of extraction wells. This PSVE technology report provides a summary of the relevant technical background, real-world case study performance, key design and cost considerations, and a scenario-based cost evaluation. The key design and cost considerations are organized into a flowchart that dovetails with the Enhanced Attenuation: Chlorinated Organics Guidance of the Interstate Technology and Regulatory Council (ITRC). The PSVE flowchart provides a structured process to determine if the technology is, or is not, reasonable and defensible for a particular site. The central basis for that decision is the expected performance of PSVE under the site specific conditions. Will PSVE have sufficient mass removal rates to reduce the release, or flux, of contamination into the underlying groundwater so that the site can meet it overall remedial objectives? The summary technical information, case study experiences, and structured decision process provided in this 'user guide' should assist environmental decision-makers, regulators, and engineers in selecting and successfully implementing PSVE at appropriate sites.

Vangelas, K.; Looney, B.; Kamath, R.; Adamson, D.; Newell, C.

2010-03-15T23:59:59.000Z

436

Catalytic Reactor For Oxidizing Mercury Vapor  

DOE Patents [OSTI]

A catalytic reactor (10) for oxidizing elemental mercury contained in flue gas is provided. The catalyst reactor (10) comprises within a flue gas conduit a perforated corona discharge plate (30a, b) having a plurality of through openings (33) and a plurality of projecting corona discharge electrodes (31); a perforated electrode plate (40a, b, c) having a plurality of through openings (43) axially aligned with the through openings (33) of the perforated corona discharge plate (30a, b) displaced from and opposing the tips of the corona discharge electrodes (31); and a catalyst member (60a, b, c, d) overlaying that face of the perforated electrode plate (40a, b, c) opposing the tips of the corona discharge electrodes (31). A uniformly distributed corona discharge plasma (1000) is intermittently generated between the plurality of corona discharge electrode tips (31) and the catalyst member (60a, b, c, d) when a stream of flue gas is passed through the conduit. During those periods when corona discharge (1000) is not being generated, the catalyst molecules of the catalyst member (60a, b, c, d) adsorb mercury vapor contained in the passing flue gas. During those periods when corona discharge (1000) is being generated, ions and active radicals contained in the generated corona discharge plasma (1000) desorb the mercury from the catalyst molecules of the catalyst member (60a, b, c, d), oxidizing the mercury in virtually simultaneous manner. The desorption process regenerates and activates the catalyst member molecules.

Helfritch, Dennis J. (Baltimore, MD)

1998-07-28T23:59:59.000Z

437

Natural mercury isotope variation in coal deposits and organic soils  

SciTech Connect (OSTI)

There is a need to distinguish among sources of Hg to the atmosphere in order to more fully understand global Hg pollution. In this study we investigate whether coal deposits within the United States, China, and Russia-Kazakhstan, which are three of the five greatest coal-producing regions, have diagnostic Hg isotopic fingerprints that can be used to discriminate among Hg sources. We also investigate the Hg isotopic composition of modern organic soil horizons developed in areas distant from point sources of Hg in North America. Mercury stored in coal deposits displays a wide range of both mass dependent fractionation and mass independent fractionation. {delta}{sup 202}Hg varies in coals by 3{per_thousand} and {Delta}{sup 201}Hg varies by 0.9{per_thousand}. Combining these two Hg isotope signals results in what may be a unique isotopic 'fingerprint' for many coal deposits. Mass independent fractionation of mercury has been demonstrated to occur during photochemical reactions of mercury. This suggests that Hg found in most coal deposits was subjected to photochemical reduction near the Earth's surface prior to deposition. The similarity in MDF and MIF of modern organic soils and coals from North America suggests that Hg deposition from coal may have imprinted an isotopic signature on soils. This research offers a new tool for characterizing mercury inputs from natural and anthropogenic sources to the atmosphere and provides new insights into the geochemistry of mercury in coal and soils. 35 refs., 2 figs., 1 tab.

Abir, Biswas; Joel D. Blum; Bridget A. Bergquist; Gerald J. Keeler; Zhouqing Xie [University of Michigan, Ann Arbor, MI (United States). Department of Geological Sciences

2008-11-15T23:59:59.000Z

438

Low Level Heat Recovery Through Heat Pumps and Vapor Recompression  

E-Print Network [OSTI]

The intent of this paper is to examine the methods and economics of recovering low level heat through heat pumps and vapor recompression. Actual commercially available equipment is considered to determine the near-term and future economic viability...

Gilbert, J.

1980-01-01T23:59:59.000Z

439

Applications of Mechanical Vapor Recompression to Evaporation and Crystallization  

E-Print Network [OSTI]

there is no boiler plant available or when electrical power is priced competitively in comparison to steam. Vapor recompression is accomplished using centrifugal, axial-flow, or positive displacement compressors and these compressors can be powered by electricity...

Outland, J. S.

440

Melt and vapor characteristics in an electron beam evaporator  

SciTech Connect (OSTI)

We compare the free surface temperatures T{sub s}, calculated by two methods, in cerium or copper evaporation experiments. The first method considers properties of the melt: by an empirical law we take into account turbulent thermal convection, instabilities and craterization of the free surface. The second method considers the vapor flow expansion and connects T{sub s} to the measured terminal parallel temperature and the terminal mean parallel velocity of the vapor jet, by Direct Simulation Monte Carlo calculations including an atom-atom inelastic collision algorithm. The agreement between the two approaches is better for cerium than for copper in the high craterization case. The analysis, from the point of view of the properties of the melt, of the terminal parameters of the vapor jet for the high beam powers shows that T{sub s} and the Knudsen number at the vapor source reach a threshold when the beam power increases.

Blumenfeld, L.; Fleche, J.L.; Gonella, C. [DCC/DPE/SPEA Centre d`Etudes de Saclay, Gif-sur-Yvette (France)

1994-12-31T23:59:59.000Z

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Hyperfine Studies of Lithium Vapor using Saturated Absorption Spectroscopy  

E-Print Network [OSTI]

the frequency of a laser with respect to an atomic spectral feature.[20] As such, saturated absorptionHyperfine Studies of Lithium Vapor using Saturated Absorption Spectroscopy? . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 3.3 Broadening Mechanisms . . . . . . . . . . . . . . . . . . . . . 15 3.4 Saturated Absorption

Cronin, Alex D.

442

Heat transfer during film condensation of a liquid metal vapor  

E-Print Network [OSTI]

The object of this investigation is to resolve the discrepancy between theory and experiment for the case of heat transfer durirnfilm condensation of liquid metal vapors. Experiments by previous investigators have yielded ...

Sukhatme, S. P.

1964-01-01T23:59:59.000Z

443

Optical Precursors in Rubidium Vapor and Their Relation to Superradiance  

E-Print Network [OSTI]

Optical precursor is the sharp optical pulse front that does not show delay in absorptive media. In this thesis, optical precursor behavior in rubidium (Rb) vapor was investigated in the picoseconds regime. An amplified femtosecond laser was shaped...

Yang, Wenlong

2012-10-19T23:59:59.000Z

444

Systems and methods for generation of hydrogen peroxide vapor  

DOE Patents [OSTI]

A system according to one embodiment includes a moisture trap for drying air; at least one of a first container and a second container; and a mechanism for at least one of: bubbling dried air from the moisture trap through a hydrogen peroxide solution in the first container for producing a hydrogen peroxide vapor, and passing dried air from the moisture trap into a headspace above a hydrogen peroxide solution in the second container for producing a hydrogen peroxide vapor. A method according one embodiment includes at least one of bubbling dried air through a hydrogen peroxide solution in a container for producing a first hydrogen peroxide vapor, and passing dried air from the moisture trap into a headspace above the hydrogen peroxide solution in a container for producing a second hydrogen peroxide vapor. Additional systems and methods are also presented.

Love, Adam H; Eckels, Joel Del; Vu, Alexander K; Alcaraz, Armando; Reynolds, John G

2014-12-02T23:59:59.000Z

445

Type B Accident Investigation of the Acid Vapor Inhalation on...  

Broader source: Energy.gov (indexed) [DOE]

2005, in TA-48, Building RC-1 Room 402 at the Los Alamos National Laboratory Type B Accident Investigation of the Acid Vapor Inhalation on June 7, 2005, in TA-48, Building RC-1...

446

Apparatus and process for depositing hard coating in a nozzle orifice  

DOE Patents [OSTI]

The present invention is directed to a process for coating the interior surfaces of an orifice in a substrate that forms a slurry fuel injection nozzle. In a specific embodiment, the nozzle is part of a fuel injection system for metering a coal-water slurry into a large, medium-speed, multi-cylinder diesel engine. In order to retard erosion of the orifice, the substrate is placed in a chemical vapor deposition (CVD) reaction chamber. A reaction gas is passed into the chamber at a gas temperature below its reaction temperature and is directed through the orifice in the substrate. The gas reaction temperature is a temperature at and above which the reaction gas deposits as a coating, and the reaction gas is of a composition whereby improved resistance to erosion by flow of the particulates in the slurry fuel is imparted by the deposited coating. Only the portion of the substrate in proximity to the orifice to be coated is selectively heated to at least the gas reaction temperature for effecting coating of the orifice's interior surfaces by the vapor deposited coating formed from the reaction gas.

Flynn, Paul L. (Fairview, PA); Giammarise, Anthony W. (Erie, PA)

1994-01-01T23:59:59.000Z

447

Apparatus and process for depositing hard coating in a nozzle orifice  

DOE Patents [OSTI]

The present invention is directed to a process for coating the interior surfaces of an orifice in a substrate that forms a slurry fuel injection nozzle. In a specific embodiment, the nozzle is part of a fuel injection system for metering a coal-water slurry into a large, medium-speed, multi-cylinder diesel engine. In order to retard erosion of the orifice, the substrate is placed in a chemical vapor deposition (CVD) reaction chamber. A reaction gas is passed into the chamber at a gas temperature below its reaction temperature and is directed through the orifice in the substrate. The gas reaction temperature is a temperature at and above which the reaction gas deposits as a coating, and the reaction gas is of a composition whereby improved resistance to erosion by flow of the particulates in the slurry fuel is imparted by the deposited coating. Only the portion of the substrate in proximity to the orifice to be coated is selectively heated to at least the gas reaction temperature for effecting coating of the orifice's interior surfaces by the vapor deposited coating formed from the reaction gas. 2 figures.

Flynn, P.L.; Giammarise, A.W.

1994-12-20T23:59:59.000Z

448

Advanced Chemical Heat Pumps Using Liquid-Vapor Reactions  

E-Print Network [OSTI]

ically feasible systems have significant potential advantage over conventional tech nology. An electric drive reactive heat pump can use smaller heat exchangers and compressor than a vapor-compression machine, and have more flexible operating... are discussed, and performance is bounded. A discussion on liquid-vapor equilibria is included as introduction to the systems I- considered. The electric drive heat pump and TA are promising systems; the TA has potential for higher COP than absorption...

Kirol, L.

449

Injection locked oscillator system for pulsed metal vapor lasers  

DOE Patents [OSTI]

An injection locked oscillator system for pulsed metal vapor lasers is disclosed. The invention includes the combination of a seeding oscillator with an injection locked oscillator (ILO) for improving the quality, particularly the intensity, of an output laser beam pulse. The present invention includes means for matching the first seeder laser pulses from the seeding oscillator to second laser pulses of a metal vapor laser to improve the quality, and particularly the intensity, of the output laser beam pulse.

Warner, Bruce E. (Livermore, CA); Ault, Earl R. (Dublin, CA)

1988-01-01T23:59:59.000Z

450

The development of a passive dosimeter for airborne benzene vapors  

E-Print Network [OSTI]

entirely different from that usually employed in gas or vapor collection devices, as there is no need for pumps and airflow control s to provi de fi xed airflows or volumes. This principle, Ficks First Law of Diffusion, states tha t the rate of transfer...+ Ilay 1978 ABSTRACT The Development of a Passive Dosimeter for Airborne Benzene Vapor. ", . (Nay 1978) David Hilliam Hager, B. S. , University of Rochester; Chairman of Advisory Committee: Dr. David F. Ciapo Passive diffusion dosimeters offer...

Hager, David William

2012-06-07T23:59:59.000Z

451

ARM: Microwave Radiometer data (MWR Profiles - QME), water vapor, temp, cloud liquid water, precip water retrievals  

DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

Microwave Radiometer data (MWR Profiles - QME), water vapor, temp, cloud liquid water, precip water retrievals

Cadeddu, Maria

452

Tank Vapor Characterization Project: Annual status report for FY 1996  

SciTech Connect (OSTI)

In Fiscal Year 1996, staff at the Vapor Analytical Laboratory at Pacific Northwest National Laboratory performed work in support of characterizing the vapor composition of the headspaces of radioactive waste tanks at the Hanford Site. Work performed included support for technical issues and sampling methodologies, upgrades for analytical equipment, analytical method development, preparation of unexposed samples, analyses of tank headspaces samples, preparation of data reports, and operation of the tank vapor database. Progress made in FY 1996 included completion and issuance of 50 analytical data reports. A sampling system comparison study was initiated and completed during the fiscal year. The comparison study involved the vapor sampling system (VSS), a truck-based system, and the in situ vapor sampling system (ISVS), a cart-based system. Samples collected during the study were characterized for inorganic, permanent gases, total non-methane organic compounds and organic speciation by SUMMA{trademark} and TST methods. The study showed comparable sampling results between the systems resulting in the program switching from the VSS to the less expensive ISVS methodology in late May 1996. A temporal study was initiated in January 1996 in order to understand the influences seasonal temperatures changes have on the vapors in the headspace of Hanford waste tanks. A holding time study was initiated in the fourth quarter of FY 1996. Samples were collected from tank S-102 and rushed to the laboratory for time zero analysis. Additional samples will be analyzed at 1, 2, 4, 8, 16, and 32 weeks.

Silvers, K.L.; Fruchter, J.S.; Huckaby, J.L.; Almeida, T.L.; Evans, J.C. Jr.; Pool, K.H.; Simonen, C.A.; Thornton, B.M.

1997-01-01T23:59:59.000Z

453

Figure 2 Analysis Tool Interface Level-1 / PBBT Analysis Tool  

E-Print Network [OSTI]

Figure 2 ­ Analysis Tool Interface Level-1 / PBBT Analysis Tool Introduction The Level-1/PBBT Analysis Tool (LPAT) was designed to assist in the analysis of North American Standard Level-1 Inspection. The data incorporated into the tool includes the results of Level-1 inspections with accompanying PBBT test

454

Customization for tool design  

SciTech Connect (OSTI)

ICEMDDN capabilities have been adapted to the specific needs of the tool designer for creation of tool and gage designs. A customized graphic system allows the designer to concentrate on the design task, not on the mechanics of the graphs system. Prerequisites of customization include management support, user acceptance, user contributions, CAD/CAM operations support and cooperation from Control Data Corporation. Benefits from customization included a measurable increase in design production, better completion schedules, high quality drawings with better accuracy, and job satisfaction from participation in system development and improvement.

Michaelson, B.

1985-10-01T23:59:59.000Z

455

Drum lid removal tool  

DOE Patents [OSTI]

A tool for removing the lid of a metal drum wherein the lid is clamped over the drum rim without protruding edges, the tool having an elongated handle with a blade carried by an angularly positioned holder affixed to the midsection of the handle, the blade being of selected width to slice between lid lip and the drum rim and, when the blade is so positioned, upward motion of the blade handle will cause the blade to pry the lip from the rim and allow the lid to be removed.

Pella, Bernard M. (Martinez, GA); Smith, Philip D. (North Augusta, SC)

2010-08-24T23:59:59.000Z

456

PDSF Software and Tools  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas Conchas recoveryLaboratorySpeedingOptimizingTools Software and Tools Chos Chos is used to

457

Hydride vapor phase epitaxy and characterization of high-quality ScN epilayers  

SciTech Connect (OSTI)

The heteroepitaxial growth of ScN films was investigated on various substrates by hydride vapor phase epitaxy (HVPE). Single crystalline mirror-like ScN(100) and ScN(110) layers were successfully deposited on r- and m-plane sapphire substrates, respectively. Homogeneous stoichiometric films (N/Sc ratio 1.01?±?0.10) up to 40??m in thickness were deposited. Their mosaicity drastically improved with increasing the film thickness. The band gap was determined by optical methods to be 2.06?eV. Impurity concentrations including H, C, O, Si, and Cl were investigated through energy dispersive X-ray spectrometry and secondary ion mass spectrometry. As a result, it was found that the presence of impurities was efficiently suppressed in comparison with that of HVPE-grown ScN films reported in the past, which was possible thanks to the home-designed corrosion-free HVPE reactor. Room-temperature Hall measurements indicated that the residual free electron concentrations ranged between 10{sup 18}–10{sup 20}?cm{sup ?3}, which was markedly lower than the reported values. The carrier mobility increased monotonically with the decreasing in carrier concentration, achieving the largest value ever reported, 284?cm{sup 2}?V{sup ?1}?s{sup ?1} at n?=?3.7?×?10{sup 18}?cm{sup ?3}.

Oshima, Yuichi, E-mail: OSHIMA.Yuichi@nims.go.jp; Víllora, Encarnación G.; Shimamura, Kiyoshi [Environment and Energy Materials Research Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2014-04-21T23:59:59.000Z

458

Smart tool holder  

DOE Patents [OSTI]

There is provided an apparatus for machining surfaces to accuracies within the nanometer range by use of electrical current flow through the contact of the cutting tool with the workpiece as a feedback signal to control depth of cut. 3 figs.

Day, R.D.; Foreman, L.R.; Hatch, D.J.; Meadows, M.S.

1998-09-08T23:59:59.000Z

459

Tritium deposition patterns in TFTR  

E-Print Network [OSTI]

Tritium deposition patterns in TFTR Presented by C. H. Skinner with key contributions from Charles, JAERI #12;· TFTR was a limiter machine - no divertor. · Operated with tritium Nov `93 - April `97. · NetV Limiter Temperature @ 28 MW NBI Low density, high temperature edge #12;Tritium deposition patterns in TFTR

Princeton Plasma Physics Laboratory

460

Influence of phosphorus content and heat treatment on the machinability of electroless nickel deposits  

SciTech Connect (OSTI)

Diamond turning is the use of a single point diamond tool on a precision lathe under very precisely controlled machine and environmental conditions to fabricate finished components. Coatings offer significant advantages for diamond turning applications inasmuch as they can be applied to light weight substrates such as aluminum or beryllium, or unusual substrates such as molybdenum or glass. One of the most used frequently employed coatings for diamond turning applications is electroless nickel. On occasions, electroless nickel deposits are not diamond turnable, e.g., tool life is shortened. This could be a function of phosphorus content, age of the solution, stress in the deposit, additives in the solution, heat treat conditions, etc. Efforts reported in this paper include machinability studies on electroless nickel deposits varying in composition from 1.8-13% phosphorus in the as-deposited condition, and after heating at 200, 400 and 600/sup 0/C.

Syn, C.K.; Dini, J.W.; Taylor, J.S.; Mara, G.L.; Vandervoort, R.R.; Donaldson, R.R.

1985-01-14T23:59:59.000Z

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Pneumatic soil removal tool  

DOE Patents [OSTI]

A soil removal tool is provided for removing radioactive soil, rock and other debris from the bottom of an excavation, while permitting the operator to be located outside of a containment for that excavation. The tool includes a fixed jaw, secured to one end of an elongate pipe, which cooperates with a movable jaw pivotably mounted on the pipe. Movement of the movable jaw is controlled by a pneumatic cylinder mounted on the pipe. The actuator rod of the pneumatic cylinder is connected to a collar which is slidably mounted on the pipe and forms part of the pivotable mounting assembly for the movable jaw. Air is supplied to the pneumatic cylinder through a handle connected to the pipe, under the control of an actuator valve mounted on the handle, to provide movement of the movable jaw. 3 figs.

Neuhaus, J.E.

1992-10-13T23:59:59.000Z

462

Pneumatic soil removal tool  

DOE Patents [OSTI]

A soil removal tool is provided for removing radioactive soil, rock and other debris from the bottom of an excavation, while permitting the operator to be located outside of a containment for that excavation. The tool includes a fixed jaw, secured to one end of an elongate pipe, which cooperates with a movable jaw pivotably mounted on the pipe. Movement of the movable jaw is controlled by a pneumatic cylinder mounted on the pipe. The actuator rod of the pneumatic cylinder is connected to a collar which is slidably mounted on the pipe and forms part of the pivotable mounting assembly for the movable jaw. Air is supplied to the pneumatic cylinder through a handle connected to the pipe, under the control of an actuator valve mounted on the handle, to provide movement of the movable jaw.

Neuhaus, John E. (Newport News, VA)

1992-01-01T23:59:59.000Z

463

Fluid blade disablement tool  

DOE Patents [OSTI]

A fluid blade disablement (FBD) tool that forms both a focused fluid projectile that resembles a blade, which can provide precision penetration of a barrier wall, and a broad fluid projectile that functions substantially like a hammer, which can produce general disruption of structures behind the barrier wall. Embodiments of the FBD tool comprise a container capable of holding fluid, an explosive assembly which is positioned within the container and which comprises an explosive holder and explosive, and a means for detonating. The container has a concavity on the side adjacent to the exposed surface of the explosive. The position of the concavity relative to the explosive and its construction of materials with thicknesses that facilitate inversion and/or rupture of the concavity wall enable the formation of a sharp and coherent blade of fluid advancing ahead of the detonation gases.

Jakaboski, Juan-Carlos (Albuquerque, NM); Hughs, Chance G. (Albuquerque, NM); Todd, Steven N. (Rio Rancho, NM)

2012-01-10T23:59:59.000Z

464

Java Vertexing Tools  

SciTech Connect (OSTI)

This document describes the implementation of the topological vertex finding algorithm ZVTOP within the org.lcsim reconstruction and analysis framework. At the present date, Java vertexing tools allow users to perform topological vertexing on tracks that have been obtained from a Fast MC simulation. An implementation that will be able to handle fully reconstructed events is being designed from the ground up for longevity and maintainability.

Strube, Jan; /Oregon U.; Graf, Norman; /SLAC

2006-03-03T23:59:59.000Z

465

Fluid sampling tool  

DOE Patents [OSTI]

A fluid sampling tool is described for sampling fluid from a container. The tool has a fluid collecting portion which is drilled into the container wall, thereby affixing it to the wall. The tool may have a fluid extracting section which withdraws fluid collected by the fluid collecting section. The fluid collecting section has a fluted shank with an end configured to drill a hole into a container wall. The shank has a threaded portion for tapping the borehole. The shank is threadably engaged to a cylindrical housing having an inner axial passageway sealed at one end by a septum. A flexible member having a cylindrical portion and a bulbous portion is provided. The housing can be slid into an inner axial passageway in the cylindrical portion and sealed to the flexible member. The bulbous portion has an outer lip defining an opening. The housing is clamped into the chuck of a drill, the lip of the bulbous section is pressed against a container wall until the shank touches the wall, and the user operates the drill. Wall shavings (kerf) are confined in a chamber formed in the bulbous section as it folds when the shank advances inside the container. After sufficient advancement of the shank, an o-ring makes a seal with the container wall. 6 figs.

Garcia, A.R.; Johnston, R.G.; Martinez, R.K.

1999-05-25T23:59:59.000Z

466

Frequency Response Analysis Tool  

SciTech Connect (OSTI)

Frequency response has received a lot of attention in recent years at the national level, which culminated in the development and approval of North American Electricity Reliability Corporation (NERC) BAL-003-1 Frequency Response and Frequency Bias Setting Reliability Standard. This report is prepared to describe the details of the work conducted by Pacific Northwest National Laboratory (PNNL) in collaboration with the Bonneville Power Administration and Western Electricity Coordinating Council (WECC) Joint Synchronized Information Subcommittee (JSIS) to develop a frequency response analysis tool (FRAT). The document provides the details on the methodology and main features of the FRAT. The tool manages the database of under-frequency events and calculates the frequency response baseline. Frequency response calculations are consistent with frequency response measure (FRM) in NERC BAL-003-1 for an interconnection and balancing authority. The FRAT can use both phasor measurement unit (PMU) data, where available, and supervisory control and data acquisition (SCADA) data. The tool is also capable of automatically generating NERC Frequency Response Survey (FRS) forms required by BAL-003-1 Standard.

Etingov, Pavel V.; Kosterev, Dmitry; Dai, T.

2014-12-31T23:59:59.000Z

467

Sol-Gel Deposited Electrochromic Coatings  

E-Print Network [OSTI]

R A T O R Y Sol-Gel Deposited Electrochromic Coatings NilgunUC-1600 Sol-Gel Deposited Electrochromic Coatings NilgunPaper Sol-gel Deposited Electrochromic Coatings Nilgun Ozer

Ozer, N.

2010-01-01T23:59:59.000Z

468

Particle deposition in ventilation ducts  

SciTech Connect (OSTI)

Exposure to airborne particles is detrimental to human health and indoor exposures dominate total exposures for most people. The accidental or intentional release of aerosolized chemical and biological agents within or near a building can lead to exposures of building occupants to hazardous agents and costly building remediation. Particle deposition in heating, ventilation and air-conditioning (HVAC) systems may significantly influence exposures to particles indoors, diminish HVAC performance and lead to secondary pollutant release within buildings. This dissertation advances the understanding of particle behavior in HVAC systems and the fates of indoor particles by means of experiments and modeling. Laboratory experiments were conducted to quantify particle deposition rates in horizontal ventilation ducts using real HVAC materials. Particle deposition experiments were conducted in steel and internally insulated ducts at air speeds typically found in ventilation ducts, 2-9 m/s. Behaviors of monodisperse particles with diameters in the size range 1-16 {micro}m were investigated. Deposition rates were measured in straight ducts with a fully developed turbulent flow profile, straight ducts with a developing turbulent flow profile, in duct bends and at S-connector pieces located at duct junctions. In straight ducts with fully developed turbulence, experiments showed deposition rates to be highest at duct floors, intermediate at duct walls, and lowest at duct ceilings. Deposition rates to a given surface increased with an increase in particle size or air speed. Deposition was much higher in internally insulated ducts than in uninsulated steel ducts. In most cases, deposition in straight ducts with developing turbulence, in duct bends and at S-connectors at duct junctions was higher than in straight ducts with fully developed turbulence. Measured deposition rates were generally higher than predicted by published models. A model incorporating empirical equations based on the experimental measurements was applied to evaluate particle losses in supply and return duct runs. Model results suggest that duct losses are negligible for particle sizes less than 1 {micro}m and complete for particle sizes greater than 50 {micro}m. Deposition to insulated ducts, horizontal duct floors and bends are predicted to control losses in duct systems. When combined with models for HVAC filtration and deposition to indoor surfaces to predict the ultimate fates of particles within buildings, these results suggest that ventilation ducts play only a small role in determining indoor particle concentrations, especially when HVAC filtration is present. However, the measured and modeled particle deposition rates are expected to be important for ventilation system contamination.

Sippola, Mark R.

2002-09-01T23:59:59.000Z

469

Diamond tool wear of electrodeposited nickel-phosphorus alloy  

SciTech Connect (OSTI)

Nickel-Phosphorus alloys are attractive materials for diamond turning applications such as fabrication of large optics and other high precision parts. Although the mechanism is not understood, diamond tool wear is minimized when the phosphorus content of the deposit is greater than 11% (wgt). In recent years, increased attention has been directed at electrodeposition as an alternate to electroless deposition for producing Ni-P alloys. One principal advantage of the electrodeposition process is that alloys with 14--15% P can be obtained; another is that an order of magnitude greater deposition thickness can be provided if necessary. This paper compares diamond turning results for electrodeposited and electroless Ni-P alloys and shows that the electrodeposited coatings provide promising results. 28 refs., 7 figs., 1 tab.

Dini, J.W.; Donaldson, R.R.; Syn, C.K. (Lawrence Livermore National Lab., CA (USA)); Sugg, D.J. (Techmetals, Inc., Dayton, OH (USA))

1990-02-01T23:59:59.000Z

470

Spray forming process for producing molds, dies and related tooling  

DOE Patents [OSTI]

A method for spray forming manufacturing of near-net-shape molds, dies and related toolings, wherein liquid material such as molten metal, metallic alloys, or polymers are atomized into fine droplets by a high temperature, high velocity gas and deposited onto a pattern. Quenching of the atomized droplets provides a heat sink, thereby allowing undercooled and partially solidified droplets to be formed in-flight. Composites can be formed by combining the atomized droplets with solid particles such as whiskers or fibers.

McHugh, Kevin M. (Idaho Falls, ID); Key, James F. (Idaho Falls, ID)

1998-01-01T23:59:59.000Z

471

Interactions between Liquid-Wall Vapor and Edge Plasmas  

SciTech Connect (OSTI)

The use of liquid walls for fusion reactors could help solve problems associated with material erosion from high plasma heat-loads and neutronic activation of structures. A key issue analyzed here is the influx of impurity ions to the core plasma from the vapor of liquid side-walls. Numerical 2D transport simulations are performed for a slab geometry which approximates the edge region of a reactor-size tokamak. Both lithium vapor (from Li or SnLi walls) and fluorine vapor (from Flibe walls) are considered for hydrogen edge-plasmas in the high- and low-recycling regimes. It is found that the minimum influx is from lithium with a low-recycling hydrogen plasma, and the maximum influx occurs for fluorine with a high-recycling hydrogen plasma.

Rognlien, T D; Rensink, M E

2000-05-25T23:59:59.000Z

472

Evaluation and prevention of explosions in soil vapor extraction systems  

SciTech Connect (OSTI)

Due to the widespread and long term use of petroleum derived fuels and solvents, many areas have subsurface soils contaminated with petroleum derivatives. This contamination can migrate to groundwater, which is frequently used to supply drinking water needs. A common method of cleaning up that contamination is soil vapor extraction (SVE). SVE is a technique where several extraction wells are installed in the contaminated area, with screens in the appropriate vertical locations. The soil vapors re extracted form the wells using a positive displacement blower. To prevent this subsurface contamination from becoming air pollution, the extracted vapors are then sent to some hydrocarbon removal device, such as a carbon adsorption system or a thermal oxidizer. The data used in this investigation were collected as part of a Radian Corporation project for a client. The site is a former petroleum refinery, and the hydrocarbons are primarily gasoline and diesel.

Hower, J.W. [Radian Corp., El Segundo, CA (United States)

1995-12-31T23:59:59.000Z

473

Liquid-phase compositions from vapor-phase analyses  

SciTech Connect (OSTI)

Arsenic normally is not considered to be a contaminant. However, because arsenic was found in many cylinders of UF{sub 6}, including in corrosion products, a study was performed of the distribution of the two arsenic fluorides, AsF{sub 3} and AsF{sub 5}, between liquid and vapor phases. The results of the study pertain to condensation or vaporization of liquid UF{sub 6}. This study includes use of various experimental data plus many extrapolations necessitated by the meagerness of the experimental data. The results of this study provide additional support for the vapor-liquid equilibrium model of J.M. Prausnitz and his coworkers as a means of describing the distribution of various impurities between vapor and liquid phases of UF{sub 6}. Thus, it is concluded that AsF{sub 3} will tend to concentrate in the liquid phase but that the concentration of AsF{sub 5} in the vapor phase will exceed its liquid-phase concentration by a factor of about 7.5, which is in agreement with experimental data. Because the weight of the liquid phase in a condensation operation may be in the range of thousands of times that of the vapor phase, most of any AsF{sub 5} will be in the liquid phase in spite of this separation factor of 7.5. It may also be concluded that any arsenic fluorides fed into a uranium isotope separation plant will either travel with other low-molecular-weight gases or react with materials present in the plant. 25 refs., 3 figs., 6 tabs.

Davis, W. Jr. (Oak Ridge Gaseous Diffusion Plant, TN (USA)); Cochran, H.D. (Oak Ridge National Lab., TN (USA))

1990-02-01T23:59:59.000Z

474

Sol-Gel Deposited Electrochromic Coatings  

E-Print Network [OSTI]

Handbook of Inorganic Electrochromic Materials, Elsevier, .O R Y Sol-Gel Deposited Electrochromic Coatings Nilgun Ozer1600 Sol-Gel Deposited Electrochromic Coatings Nilgun Ozer

Ozer, N.

2010-01-01T23:59:59.000Z

475

Linked Deposit Loan Program (Kentucky)  

Broader source: Energy.gov [DOE]

The Linked Deposit Program provides loan financing for small businesses of up to $100,000 for up to 7 years. The State Investment Commission invests funds from the state's Abandoned Property Cash...

476

Seasonalepisodic control of acid deposition  

E-Print Network [OSTI]

This report contains the climatological, technical and economic factors for episodic and seasonal control of emissions in existing power plants. Analyzing a large data set of acid deposition for the years 1982-85, we find ...

Fay, James A.

1988-01-01T23:59:59.000Z

477

Balance of atmospheric water vapor over the Gulf of Mexico  

E-Print Network [OSTI]

/ / / / I / o. i + B CAP C BBJ V S TPA PZA EHA Fig. 5. Vertical distribution of the average water-vapor flux normal to the perimeter of the Gulf of Nexico during Oct-Kov-Dec 1959. Plus values are inflow in kgm/sec-mb-. m. -o-I Pi C4 I / ~-o, i...BALANCE OF ATMOSPHERIC HATER VAPOR OVER THE GULF OF MEXICO A Thesis By RALPH MORGAN HUGHES Captain, USAF Submitted to the Graduate College of the Texas A&M University in partial fulf-'llment of the rec;uirements for the degree of MASTER...

Hughes, Ralph Morgan

1967-01-01T23:59:59.000Z

478

Phase effects for electrons in liquid water and water vapor  

SciTech Connect (OSTI)

The objective of these studies is to compare transport, energy loss, and other phenomena for electrons in water in the liquid and vapor phases. Understanding the differences and similarities is an interesting physics problem in its own right. It is also important for applying the relatively large body of experimental data available for the vapor to the liquid, which is of greater relevance in radiobiology. This paper presents a summary of results from a series of collaborative studies carried out by the authors at Oak Ridge National Laboratory (ORNL) and the Gesellschaft fuer Strahlen- und Umweltforschung (GSF). 14 figs.

Turner, J.E.; Paretzke, H.G.; Wright, H.A.; Hamm, R.N.; Ritchie, R.H.

1988-01-01T23:59:59.000Z

479

The development of a passive dosimeter for airborne aniline vapors  

E-Print Network [OSTI]

passive sampl1ng dosimeter was designed to measure concen- trat1ons of aniline vapor in air. Diffus1on tubes of 1. 5, 3. 0 and 4. 5 cm lengths were tested under controlled conditions of relative humid1ty, air temperature and vapor concentrations. A... of Measured vs Calculated Concentrations APPENDIX D-Student-t Test on Slopes of Measured vs Calculated Data . APPENDIX E-Statistical Analysis of Four Hour Time- Weighted Average Study on 3. 0 cm Dosimeter VITA ~pa e 42 45 48 59 62 63 65 70 73...

Campbell, James Evan

1977-01-01T23:59:59.000Z

480

Asphalt deposition in miscible floods  

E-Print Network [OSTI]

. ACKNOWLEDGMENTS. . 22 23 8. REFERENCES. 24 9. APPENDIX. 26 LIST OF TABLES Table Page I II IV Properties of the Crude Oils Studied Average Core Properties for Different Tests Average Perrneabilities of Different Sections of Core Before and After... Displacement with Liquefied Petroleum Gas Percent Reduction in Permeability in Different Sections of Core Due to Asphalt Deposition Average Recoveries of Four Crude Oils and Increase in Swept Area due to Plugging by Asphalt Deposition 27 29 ABSTRACT...

Hasan, Syed Mir Ahmed

1964-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "vapor deposition tools" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Chemical enhancement of surface deposition  

DOE Patents [OSTI]

A method and apparatus for increasing the deposition of ions onto a surface, such as the adsorption of uranium ions on the detecting surface of a radionuclide detector. The method includes the step of exposing the surface to a complexing agent, such as a phosphate ion solution, which has an affinity for the dissolved species to be deposited on the surface. This provides, for example, enhanced sensitivity of the radionuclide detector.

Patch, Keith D. (Lexington, MA); Morgan, Dean T. (Sudbury, MA)

1997-07-29T23:59:59.000Z

482

Chemical enhancement of surface deposition  

DOE Patents [OSTI]

A method and apparatus are disclosed for increasing the deposition of ions onto a surface, such as the adsorption of uranium ions on the detecting surface of a radionuclide detector. The method includes the step of exposing the surface to a complexing agent, such as a phosphate ion solution, which has an affinity for the dissolved species to be deposited on the surface. This provides, for example, enhanced sensitivity of the radionuclide detector. 16 figs.

Patch, K.D.; Morgan, D.T.

1997-07-29T23:59:59.000Z

483

A Radon Progeny Deposition Model  

E-Print Network [OSTI]

The next generation low-background detectors operating underground aim for unprecedented low levels of radioactive backgrounds. Although the radioactive decays of airborne radon (particularly Rn-222) and its subsequent progeny present in an experiment are potential backgrounds, also problematic is the deposition of radon progeny on detector materials. Exposure to radon at any stage of assembly of an experiment can result in surface contamination by progeny supported by the long half life (22 y) of Pb-210 on sensitive locations of a detector. An understanding of the potential surface contamination from deposition will enable requirements of radon-reduced air and clean room environments for the assembly of low background experiments. It is known that there are a number of environmental factors that govern the deposition of progeny onto surfaces. However, existing models have not explored the impact of some environmental factors important for low background experiments. A test stand has been constructed to deposit radon progeny on various surfaces under a controlled environment in order to develop a deposition model. Results from this test stand and the resulting deposition model are presented.

V. E. Guiseppe; S. R. Elliott; A. Hime; K. Rielage; S. Westerdale

2010-12-30T23:59:59.000Z

484

A scalable tools communication infrastructure.  

SciTech Connect (OSTI)

The Scalable Tools Communication Infrastructure (STCI) is an open source collaborative effort intended to provide high-performance, scalable, resilient, and portable communications and process control services for a wide variety of user and system tools. STCI is aimed specifically at tools for ultrascale computing and uses a component architecture to simplify tailoring the infrastructure to a wide range of scenarios. This paper describes STCI's design philosophy, the various components that will be used to provide an STCI implementation for a range of ultrascale platforms, and a range of tool types. These include tools supporting parallel run-time environments, such as MPI, parallel application correctness tools and performance analysis tools, as well as system monitoring and management tools.

Buntinas, D.; Bosilca, G.; Graham, R. L.; Vallee, G.; Watson, G. R.; Mathematics and Computer Science; Univ. of Tennessee; ORNL; IBM

2008-07-01T23:59:59.000Z

485

A Scalable Tools Communication Infrastructure  

SciTech Connect (OSTI)

The Scalable Tools Communication Infrastructure (STCI) is an open source collaborative effort intended to provide high-performance, scalable, resilient, and portable communications and process control services for a wide variety of user and system tools. STCI is aimed specifically at tools for ultrascale computing and uses a component architecture to simplify tailoring the infrastructure to a wide range of scenarios. This paper describes STCI's design philosophy, the various components that will be used to provide an STCI implementation for a range of ultrascale platforms, and a range of tool types. These include tools supporting parallel run-time environments, such as MPI, parallel application correctness tools and performance analysis tools, as well as system monitoring and management tools.

Buntinas, Darius [Argonne National Laboratory (ANL); Bosilca, George [University of Tennessee, Knoxville (UTK); Graham, Richard L [ORNL; Vallee, Geoffroy R [ORNL; Watson, Gregory R. [IBM T. J. Watson Research Center

2008-01-01T23:59:59.000Z

486

Development Tools at NERSC  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series to UserProduct: CrudeOfficeNERSC Helps Develop Next-GenEMSL ResearchTools

487

ARM - Data Tools  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformationbudapest Comments? We would love toContact Information Related LinksDailyJulygovData Tools Data

488

5, 12291261, 2012 diagnostic tool  

E-Print Network [OSTI]

GMDD 5, 1229­1261, 2012 Community diagnostic tool A. Gettelman et al. Title Page Abstract to the corresponding final paper in GMD if available. A community diagnostic tool for Chemistry Climate Model Community diagnostic tool A. Gettelman et al. Title Page Abstract Introduction Conclusions References Tables

Gettelman, Andrew

489

NISTIR 7100 PDA Forensic Tools  

E-Print Network [OSTI]

NISTIR 7100 PDA Forensic Tools: AnOverviewandAnalysis RickAyers WayneJansen #12;ii NISTIR 7100 C O M P U T E R S E C U R I T Y PDA Forensic Tools: An Overview and Analysis Rick Ayers Wayne Jansen incident, forensic examiners require tools that allow the proper retrieval and speedy examination

490

Butt Joint Tool Commissioning  

SciTech Connect (OSTI)

ITER Central Solenoid uses butt joints for connecting the pancakes in the CS module. The principles of the butt joining of the CICC were developed by the JAPT during CSMC project. The difference between the CSMC butt joint and the CS butt joint is that the CS butt joint is an in-line joint, while the CSMC is a double joint through a hairpin jumper. The CS butt joint has to carry the hoop load. The straight length of the joint is only 320 mm, and the vacuum chamber around the joint has to have a split in the clamp shell. These requirements are challenging. Fig.1 presents a CSMC joint, and Fig.2 shows a CS butt joint. The butt joint procedure was verified and demonstrated. The tool is capable of achieving all specified parameters. The vacuum in the end was a little higher than the target, which is not critical and readily correctable. We consider, tentatively that the procedure is established. Unexpectedly, we discover significant temperature nonuniformity in the joint cross section, which is not formally a violation of the specs, but is a point of concern. All testing parameters are recorded for QA purposes. We plan to modify the butt joining tool to improve its convenience of operation and provide all features necessary for production of butt joints by qualified personnel.

Martovetsky, N N

2007-12-06T23:59:59.000Z

491

FASTBUS simulation tools  

SciTech Connect (OSTI)

A generalized model of a FASTBUS master is presented. The model is used with simulation tools to aid in the specification, design, and production of FASTBUS slave modules. The model provides a mechanism to interact with the electrical schematics and software models to predict performance. The model is written in the IEEE std 1076-1987 hardware description language VHDL. A model of the ATC logic is also presented. VHDL was chosen to provide portability to various platforms and simulation tools. The models, in conjunction with most commercially available simulators, will perform all of the transactions specified in IEEE std 960-1989. The models may be used to study the behavior of electrical schematics and other software models and detect violations of the FASTBUS protocol. For example, a hardware design of a slave module could be studied, protocol violations detected and corrected before committing money to prototype development. The master model accepts a stream of high level commands from an ASCII file to initiate FASTBUS transactions. The high level command language is based on the FASTBUS standard routines listed in IEEE std 1177-1989. Using this standard-based command language to direct the model of the master, hardware engineers can simulate FASTBUS transactions in the language used by physicists and programmers to operate FASTBUS systems. 15 refs., 6 figs.

Dean, T.D. (Stanford Linear Accelerator Center, Menlo Park, CA (United States)); Haney, M.J. (Illinois Univ., Urbana, IL (United States))

1991-10-01T23:59:59.000Z

492

Heat transfer during film condensation of potassium vapor on a horizontal plate  

E-Print Network [OSTI]

The object of the investigation is to analyze the following two features of heat transfer during condensation of potassium vapor: a. Heat transfer during film condensation of a pure saturated potassium vapor on a horizontal ...

Meyrial, Paul M.

1968-01-01T23:59:59.000Z

493

E-Print Network 3.0 - airs water vapor Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

water vapor Search Powered by Explorit Topic List Advanced Search Sample search results for: airs water vapor Page: << < 1 2 3 4 5 > >> 1 A laboratory experiment from the Little...

494

Method and apparatus to measure vapor pressure in a flow system  

DOE Patents [OSTI]

The present invention is directed to a method for determining, by a condensation method, the vapor pressure of a material with a known vapor pressure versus temperature characteristic, in a flow system particularly in a mercury isotope enrichment process.

Grossman, Mark W. (Belmont, MA); Biblarz, Oscar (Swampscott, MA)

1991-01-01T23:59:59.000Z

495

Carbon-Supported bimetallic Pd-Fe catalysts for vapor-phasehydrodeoxy...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Carbon-Supported bimetallic Pd-Fe catalysts for vapor-phase hydrodeoxygenation of guaiacol. Carbon-Supported bimetallic Pd-Fe catalysts for vapor-phase hydrodeoxygenation of...

496

Energy Saving in Distillation Using Structured Packing and Vapor Recompression  

E-Print Network [OSTI]

difference across the column. VRC uses hot compressed overhead vapors, instead of steam, to heat the reboiler. Cost savings are highest when the pressure ratio for the compressor is low. The pressure ratio depends on the boiling point difference of top...

Hill, J.H.

497

Experimental Study of Water Vapor Adsorption on Geothermal  

E-Print Network [OSTI]

Geothermal Program under Department of Energy Grant No. DE-FG07-90IDI2934,and by the Department of PetroleumSGP-TR-148 Experimental Study of Water Vapor Adsorption on Geothermal Reservoir Rocks Shubo Shang Engineering, Stanford University Stanford Geothermal Program Interdisciplinary Research in Engineering

Stanford University

498

Fatigue Resistance of Asphalt Mixtures Affected by Water Vapor Movement  

E-Print Network [OSTI]

This dissertation has two key objectives: the first objective is to develop a method of predicting and quantifying the amount of water that can enter into a pavement system by vapor transport; the second objective is to identify to which extent...

Tong, Yunwei

2013-11-08T23:59:59.000Z

499

A transient model for a cesium vapor thermionic converter. [Cs  

SciTech Connect (OSTI)

This paper presents an analytical model for simulating the transient and steady-state operation of cesium vapor thermionic converters. A parametric analysis is performed to assess the transient response of the converter to changes in fission power and width of interelectrode gap. The model optimizes the converter performance for maximum electric power to the load.(AIP)

El-Genk, M.S.; Murray, C.S.; Chaudhuri, S. (Institute for Space Nuclear Power Studies, Department of Chemical and Nuclear Engineering, The University of New Mexico, Albuquerque, New Mexico (USA))

1991-01-10T23:59:59.000Z

500

CVD CNT CNT (Vapor-grown carbon fiber, VGCF)  

E-Print Network [OSTI]

CNT CNT CVD CNT CNT (Vapor-grown carbon fiber, VGCF) 10001300 CNT CVD Smalley CO 24 CCVD 1 #12; 27 mm 3% 200 sccm 800 10 10 Torr 300 sccm Ethanol tank Hot bath boat Ar/H2 Ar or Ethanol tank Hot bath Ethanol tank Hot bath Pressure gauge Maindraintube Subdraintube

Maruyama, Shigeo