National Library of Energy BETA

Sample records for values sic rse

  1. Characteristics RSE Column Factor: Total

    U.S. Energy Information Administration (EIA) Indexed Site

    and 1994 Vehicle Characteristics RSE Column Factor: Total 1993 Family Income Below Poverty Line Eli- gible for Fed- eral Assist- ance 1 RSE Row Factor: Less than 5,000 5,000...

  2. 2003 CBECS RSE Tables

    Gasoline and Diesel Fuel Update (EIA)

    Dec 2006 Next CBECS will be conducted in 2007 Standard error is a measure of the reliability or precision of the survey statistic. The value for the standard error can be used...

  3. " Row: Selected SIC Codes; Column: Energy Sources;"

    U.S. Energy Information Administration (EIA) Indexed Site

    2. Fuel Consumption, 1998;" " Level: National Data; " " Row: Selected SIC Codes; Column: Energy Sources;" " Unit: Trillion Btu." " "," "," ",," "," "," "," "," "," "," "," ",," " " "," ",,,,,,,,,,"RSE" "SIC"," ","

  4. Re: NBP RFI: CommunicationRse quirements | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    CommunicationRse quirements Re: NBP RFI: CommunicationRse quirements Pepco Holdings, Inc. (PHI) is pleased to respond to the U.S Department of Energy request for comments regarding the communications requirements of electric utilities deploying the Smart Grid. Re: NBP RFI: CommunicationRse quirements (589.11 KB) More Documents & Publications Re: NBP RFI: Communications Requirements Re: NBP RFI-Implementing the National Broadband Plan by Studying the Communications Requirements of Electric

  5. Table A30. Total Primary Consumption of Energy for All Purposes by Value of

    U.S. Energy Information Administration (EIA) Indexed Site

    0. Total Primary Consumption of Energy for All Purposes by Value of" "Shipment Categories, Industry Group, and Selected Industries, 1991" " (Estimates in Trillion Btu)" ,,,," Value of Shipments and Receipts(b)" ,,,," ","(million dollars)" ,,,"-","-","-","-","-","-","RSE" "SIC"," "," "," "," "," ","

  6. " Row: Selected SIC Codes; Column: Energy...

    U.S. Energy Information Administration (EIA) Indexed Site

    ,,"Total United States" ,"RSE Column ... 29,"Petroleum and Coal Products ... "produced at refineries or natural gas ...

  7. RSE Pulp & Chemical, LLC (Subsidiary of Red Shield Environmental, LLC) |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy RSE Pulp & Chemical, LLC (Subsidiary of Red Shield Environmental, LLC) RSE Pulp & Chemical, LLC (Subsidiary of Red Shield Environmental, LLC) A fact sheet detailling a proposal of a biorefinery facility in an existing pulp mill to demonstrate the production of cellulosic ethanol from lignocellulosic (wood) extract. RSE Pulp & Chemical, LLC (Subsidiary of Red Shield Environmental, LLC) (19.31 KB) More Documents & Publications Pacific Ethanol, Inc EA-1888:

  8. " Row: Selected SIC Codes; Column: Energy...

    U.S. Energy Information Administration (EIA) Indexed Site

    Btu)","Factors" ,,"Total United States" ,"RSE Column ... 29,"Petroleum and Coal Products ... "produced at refineries or natural gas ...

  9. " Row: Selected SIC Codes; Column: Energy...

    U.S. Energy Information Administration (EIA) Indexed Site

    Btu)","Factors" ,,"Total United States" ,"RSE Column ... 29,"Petroleum and Coal ... "produced at refineries or natural gas ...

  10. Level: National Data and Regional Totals; Row: NAICS Codes, Value...

    Annual Energy Outlook [U.S. Energy Information Administration (EIA)]

    ... have been consumed in place of residual fuel oil. (f) Value of Shipments and Receipts ... Notes: To obtain the RSE percentage for any table cell, multiply the cell's corresponding ...

  11. 2003 Commercial Buildings Energy Consumption - What is an RSE

    U.S. Energy Information Administration (EIA) Indexed Site

    the estimates differ from the true population values. However, the sample design permits us to estimate the sampling error in each value. It is important to...

  12. Good-Bye, SIC - Hello, NAICS

    U.S. Energy Information Administration (EIA) Indexed Site

    you are having trouble, call 202-586-8800 for help. Home > Industrial > Manufacturing > Good-Bye, SIC - Hello, NAICS Good-Bye, SIC - Hello, NAICS The North American Industry...

  13. Cellu-WHAT?-sic: Communicating the Biofuels Message to Local...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Cellu-WHAT?-sic: Communicating the Biofuels Message to Local Stakeholders Cellu-WHAT?-sic: Communicating the Biofuels Message to Local Stakeholders Breakout Session 3D-Building ...

  14. Solute embrittlement of SiC

    SciTech Connect (OSTI)

    Enrique, Ral A., E-mail: enriquer@umich.edu [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48103 (United States); Van der Ven, Anton, E-mail: avdv@engineering.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2014-09-21

    The energies and stresses associated with the decohesion of ?-SiC in the presence of mobile Pd and Ag impurities are studied from first principles. Density functional theory calculations are parameterized with a generalized cohesive zone model and are analyzed within a thermodynamic framework that accounts for realistic boundary conditions in the presence of mobile impurities. We find that Pd impurities will embrittle SiC when Pd is in equilibrium with metallic Pd precipitates. Our thermodynamic analysis predicts that Pd embrittles SiC by substantially reducing the maximum stress of decohesion as a result of a phase transition between decohering planes involving an influx of Pd atoms. The methods presented in this work can be applied to study the thermodynamics of decohesion of SiC in other aggressive environments containing oxygen and water, for example, and yield environment dependent cohesive zone models for use in continuum approaches to study crack propagation and fracture.

  15. ESK SIC GmbH | Open Energy Information

    Open Energy Info (EERE)

    ESK SIC GmbH Jump to: navigation, search Name: ESK-SIC GmbH Place: Germany Zip: D- 50226 Sector: Solar Product: Supplier of silicon carbide for wire saws, with some solar...

  16. SiC Processing AG | Open Energy Information

    Open Energy Info (EERE)

    SiC Processing AG Jump to: navigation, search Name: SiC Processing AG Place: Hirschau, Germany Zip: 92242 Sector: Solar Product: Offers management and recycling of slurry for solar...

  17. "RSE Table E2.1. Relative Standard Errors for Table E2.1;...

    U.S. Energy Information Administration (EIA) Indexed Site

    by petroleum" "refineries (e.g., crude oil ... ,"Total United States" "Value of Shipments and ... Examples of Liquefied Petroleum Gases '(LPG)' are ...

  18. Modeling and Testing Miniature Torsion Specimens for SiC Joining Development Studies for Fusion

    SciTech Connect (OSTI)

    Henager, Charles H.; Nguyen, Ba Nghiep; Kurtz, Richard J.; Roosendaal, Timothy J.; Borlaug, Brennan A.; Ferraris, Monica; Ventrella, Andrea; Katoh, Yutai

    2015-08-19

    The international fusion community has designed a miniature torsion specimen for neutron irradiation studies of joined SiC and SiC/SiC composite materials. Miniature torsion joints based on this specimen design were fabricated using displacement reactions between Si and TiC to produce Ti3SiC2 + SiC joints with CVD-SiC and tested in torsion-shear prior to and after neutron irradiation. However, many of these miniature torsion specimens fail out-of-plane within the CVD-SiC specimen body, which makes it problematic to assign a shear strength value to the joints and makes it difficult to compare unirradiated and irradiated joint strengths to determine the effects of the irradiation. Finite element elastic damage and elastic-plastic damage models of miniature torsion joints are developed that indicate shear fracture is likely to occur within the body of the joined sample and cause out-of-plane failures for miniature torsion specimens when a certain modulus and strength ratio between the joint material and the joined material exists. The model results are compared and discussed with regard to unirradiated and irradiated joint test data for a variety of joint materials. The unirradiated data includes Ti3SiC2 + SiC/CVD-SiC joints with tailored joint moduli, and includes steel/epoxy and CVD-SiC/epoxy joints. The implications for joint data based on this sample design are discussed.

  19. Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

    SciTech Connect (OSTI)

    Ciuk, Tymoteusz [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Cakmakyapan, Semih; Ozbay, Ekmel [Department of Electrical and Electronics Engineering, Department of Physics, Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara (Turkey); Caban, Piotr; Grodecki, Kacper; Pasternak, Iwona; Strupinski, Wlodek, E-mail: wlodek.strupinski@itme.edu.pl [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Krajewska, Aleksandra [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Institute of Optoelectronics, Military University of Technology, Gen. S. Kaliskiego 2, 00-908 Warsaw (Poland); Szmidt, Jan [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland)

    2014-09-28

    The transport properties of quasi-free-standing (QFS) bilayer graphene on SiC depend on a range of scattering mechanisms. Most of them are isotropic in nature. However, the SiC substrate morphology marked by a distinctive pattern of the terraces gives rise to an anisotropy in graphene's sheet resistance, which may be considered an additional scattering mechanism. At a technological level, the growth-preceding in situ etching of the SiC surface promotes step bunching which results in macro steps ~10 nm in height. In this report, we study the qualitative and quantitative effects of SiC steps edges on the resistance of epitaxial graphene grown by chemical vapor deposition. We experimentally determine the value of step edge resistivity in hydrogen-intercalated QFS-bilayer graphene to be ~190 ??m for step height hS = 10 nm and provide proof that it cannot originate from mechanical deformation of graphene but is likely to arise from lowered carrier concentration in the step area. Our results are confronted with the previously reported values of the step edge resistivity in monolayer graphene over SiC atomic steps. In our analysis, we focus on large-scale, statistical properties to foster the scalable technology of industrial graphene for electronics and sensor applications.

  20. Electrostatic Transfor of Patterned Epitaxial Graphene from SiC...

    Office of Scientific and Technical Information (OSTI)

    Electrostatic Transfor of Patterned Epitaxial Graphene from SiC (001) to Glass. Citation Details In-Document Search Title: Electrostatic Transfor of Patterned Epitaxial Graphene ...

  1. Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Diffusion of Fission Product Surrogates

    SciTech Connect (OSTI)

    Henager, Charles H.; Jiang, Weilin

    2014-11-01

    MAX phases, such as titanium silicon carbide (Ti3SiC2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti3SiC2 has been suggested in the literature as a possible fuel cladding material. Prior to the application, it is necessary to investigate diffusivities of fission products in the ternary compound at elevated temperatures. This study attempts to obtain relevant data and make an initial assessment for Ti3SiC2. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti3SiC2, SiC, and a dual-phase nanocomposite of Ti3SiC2/SiC synthesized at PNNL. Thermal annealing and in-situ Rutherford backscattering spectrometry (RBS) were employed to study the diffusivity of the various implanted species in the materials. In-situ RBS study of Ti3SiC2 implanted with Au ions at various temperatures was also performed. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti3SiC2 occurs during ion implantation at 873 K. Cs in Ti3SiC2 is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti3SiC2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Further studies of the related materials are recommended.

  2. RSE Table 7.4 Relative Standard Errors for Table 7.4

    U.S. Energy Information Administration (EIA) Indexed Site

    4 Relative Standard Errors for Table 7.4;" " Unit: Percents." " ",," "," ",," "," " "Economic",,"Residual","Distillate","Natural ","LPG and" "Characteristic(a)","Electricity","Fuel Oil","Fuel Oil(b)","Gas(c)","NGL(d)","Coal" ,"Total United States" "Value of Shipments and Receipts"

  3. RSE Table 7.5 Relative Standard Errors for Table 7.5

    U.S. Energy Information Administration (EIA) Indexed Site

    5 Relative Standard Errors for Table 7.5;" " Unit: Percents." " ",," "," ",," "," " "Economic",,"Residual","Distillate","Natural ","LPG and" "Characteristic(a)","Electricity","Fuel Oil","Fuel Oil(b)","Gas(c)","NGL(d)","Coal" ,"Total United States" "Value of Shipments and Receipts"

  4. Notes on the plasma resonance peak employed to determine doping in SiC

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Engelbrecht, J. A. A.; van Rooyen, I. J.; Henry, A.; Janzen, E.; Sephton, B.

    2015-07-23

    In this study, the doping level of a semiconductor material can be determined using the plasma resonance frequency to obtain the carrier concentration associated with doping. This paper provides an overview of the procedure for the three most common polytypes of SiC. Results for 3C-SiC are presented and discussed. In phosphorus doped samples analysed, it is submitted that the 2nd plasma resonance cannot be detected due to high values of the free carrier damping constant γ.

  5. Towards an Optimal Gradient-dependent Energy Functional of the PZ-SIC Form

    SciTech Connect (OSTI)

    Jónsson, Elvar Örn; Lehtola, Susi; Jónsson, Hannes

    2015-06-01

    Results of Perdew–Zunger self-interaction corrected (PZ-SIC) density functional theory calculations of the atomization energy of 35 molecules are compared to those of high-level quantum chemistry calculations. While the PBE functional, which is commonly used in calculations of condensed matter, is known to predict on average too high atomization energy (overbinding of the molecules), the application of PZ-SIC gives a large overcorrection and leads to significant underestimation of the atomization energy. The exchange enhancement factor that is optimal for the generalized gradient approximation within the Kohn-Sham (KS) approach may not be optimal for the self-interaction corrected functional. The PBEsol functional, where the exchange enhancement factor was optimized for solids, gives poor results for molecules in KS but turns out to work better than PBE in PZ-SIC calculations. The exchange enhancement is weaker in PBEsol and the functional is closer to the local density approximation. Furthermore, the drop in the exchange enhancement factor for increasing reduced gradient in the PW91 functional gives more accurate results than the plateaued enhancement in the PBE functional. A step towards an optimal exchange enhancement factor for a gradient dependent functional of the PZ-SIC form is taken by constructing an exchange enhancement factor that mimics PBEsol for small values of the reduced gradient, and PW91 for large values. The average atomization energy is then in closer agreement with the high-level quantum chemistry calculations, but the variance is still large, the F2 molecule being a notable outlier.

  6. Towards an Optimal Gradient-dependent Energy Functional of the PZ-SIC Form

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jónsson, Elvar Örn; Lehtola, Susi; Jónsson, Hannes

    2015-06-01

    Results of Perdew–Zunger self-interaction corrected (PZ-SIC) density functional theory calculations of the atomization energy of 35 molecules are compared to those of high-level quantum chemistry calculations. While the PBE functional, which is commonly used in calculations of condensed matter, is known to predict on average too high atomization energy (overbinding of the molecules), the application of PZ-SIC gives a large overcorrection and leads to significant underestimation of the atomization energy. The exchange enhancement factor that is optimal for the generalized gradient approximation within the Kohn-Sham (KS) approach may not be optimal for the self-interaction corrected functional. The PBEsol functional, wheremore » the exchange enhancement factor was optimized for solids, gives poor results for molecules in KS but turns out to work better than PBE in PZ-SIC calculations. The exchange enhancement is weaker in PBEsol and the functional is closer to the local density approximation. Furthermore, the drop in the exchange enhancement factor for increasing reduced gradient in the PW91 functional gives more accurate results than the plateaued enhancement in the PBE functional. A step towards an optimal exchange enhancement factor for a gradient dependent functional of the PZ-SIC form is taken by constructing an exchange enhancement factor that mimics PBEsol for small values of the reduced gradient, and PW91 for large values. The average atomization energy is then in closer agreement with the high-level quantum chemistry calculations, but the variance is still large, the F2 molecule being a notable outlier.« less

  7. Synthesis of micro-sized interconnected Si-C composites

    DOE Patents [OSTI]

    Wang, Donghai; Yi, Ran; Dai, Fang

    2016-02-23

    Embodiments provide a method of producing micro-sized Si--C composites or doped Si--C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO.sub.x (0

  8. INTEGRATED 15KV SIC VSD AND HIGH-SPEED MW MOTOR FOR GAS COMPRESSION...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    15KV SIC VSD AND HIGH-SPEED MW MOTOR FOR GAS COMPRESSION SYSTEMS INTEGRATED 15KV SIC VSD AND HIGH-SPEED MW MOTOR FOR GAS COMPRESSION SYSTEMS Eaton Corporation - Arden, NC A 15 ...

  9. Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Thermal and Mechanical Properties

    SciTech Connect (OSTI)

    Henager, Charles H.; Alvine, Kyle J.; Roosendaal, Timothy J.; Shin, Yongsoon; Nguyen, Ba Nghiep; Borlaug, Brennan A.; Jiang, Weilin

    2014-04-01

    SiC-polymers (pure polycarbosilane and polycarbosilane filled with SiC-particles) are being combined with Si and TiC powders to create a new class of polymer-derived ceramics for consideration as advanced nuclear materials in a variety of applications. Compared to pure SiC these materials have increased fracture toughness with only slightly reduced thermal conductivity. Future work with carbon nanotube (CNT) mats will be introduced with the potential to increase the thermal conductivity and the fracture toughness. At present, this report documents the fabrication of a new class of monolithic polymer derived ceramics, SiC + SiC/Ti3SiC2 dual phase materials. The fracture toughness of the dual phase material was measured to be significantly greater than Hexoloy SiC using indentation fracture toughness testing. However, thermal conductivity of the dual phase material was reduced compared to Hexoloy SiC, but was still appreciable, with conductivities in the range of 40 to 60 W/(m K). This report includes synthesis details, optical and scanning electron microscopy images, compositional data, fracture toughness, and thermal conductivity data.

  10. FORMATION OF SiC GRAINS IN PULSATION-ENHANCED DUST-DRIVEN WIND AROUND CARBON-RICH ASYMPTOTIC GIANT BRANCH STARS

    SciTech Connect (OSTI)

    Yasuda, Yuki; Kozasa, Takashi, E-mail: yuki@antares-a.sci.hokudai.ac.jp [Department of Natural History Sciences, Faculty of Science, Hokkaido University, Sapporo 060-0810 (Japan)

    2012-02-01

    We investigate the formation of silicon carbide (SiC) grains in the framework of dust-driven wind around pulsating carbon-rich asymptotic giant branch (C-rich AGB) stars to reveal not only the amount but also the size distribution. Two cases are considered for the nucleation process: one is the local thermal equilibrium (LTE) case where the vibration temperature of SiC clusters T{sub v} is equal to the gas temperature as usual, and another is the non-LTE case in which T{sub v} is assumed to be the same as the temperature of small SiC grains. The results of the hydrodynamical calculations for a model with stellar parameters of mass M{sub *} = 1.0 M{sub Sun }, luminosity L{sub *} = 10{sup 4} L{sub Sun }, effective temperature T{sub eff} = 2600 K, C/O ratio = 1.4, and pulsation period P = 650 days show the following: in the LTE case, SiC grains condense in accelerated outflowing gas after the formation of carbon grains, and the resulting averaged mass ratio of SiC to carbon grains of {approx}10{sup -8} is too small to reproduce the value of 0.01-0.3, which is inferred from the radiative transfer models. On the other hand, in the non-LTE case, the formation region of the SiC grains is more internal and/or almost identical to that of the carbon grains due to the so-called inverse greenhouse effect. The mass ratio of SiC to carbon grains averaged at the outer boundary ranges from 0.098 to 0.23 for the sticking probability {alpha}{sub s} = 0.1-1.0. The size distributions with the peak at {approx}0.2-0.3 {mu}m in radius cover the range of size derived from the analysis of the presolar SiC grains. Thus, the difference between the temperatures of the small cluster and gas plays a crucial role in the formation process of SiC grains around C-rich AGB stars, and this aspect should be explored for the formation process of dust grains in astrophysical environments.

  11. "RSE Table E7.1. Relative Standard Errors for Table E7.1;"

    U.S. Energy Information Administration (EIA) Indexed Site

    1. Relative Standard Errors for Table E7.1;" " Unit: Percents." ,,,"Consumption" " ",,"Consumption","per Dollar" "Economic","Consumption","per Dollar","of Value" "Characteristic(a)","per Employee","of Value Added","of Shipments" ,"Total United States" "Value of Shipments and Receipts" "(million dollars)" " Under 20",2,2,2

  12. Towards SiC Surface Functionalization: An Ab Initio Study

    SciTech Connect (OSTI)

    Cicero, G; Catellani, A

    2005-01-28

    We present a microscopic model of the interaction and adsorption mechanism of simple organic molecules on SiC surfaces as obtained from ab initio molecular dynamics simulations. Our results open the way to functionalization of silicon carbide, a leading candidate material for bio-compatible devices.

  13. Chemical reactivity of CVC and CVD SiC with UO2 at high temperatures

    SciTech Connect (OSTI)

    Silva, Chinthaka M; Katoh, Yutai; Voit, Stewart L; Snead, Lance Lewis

    2015-01-01

    Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300 C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity, according to microstructural investigations. However, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500 C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500 C. Furthermore, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.

  14. "RSE Table E7.2. Relative Standard Errors for Table E7.2;"

    U.S. Energy Information Administration (EIA) Indexed Site

    2. Relative Standard Errors for Table E7.2;" " Unit: Percents." " "," ",,,"Consumption" " "," ",,"Consumption","per Dollar" "NAICS",,"Consumption","per Dollar","of Value" "Code(a)","Economic Characteristic(b)","per Employee","of Value Added","of Shipments" ,,"Total United States" " 311 - 339","ALL

  15. Level: National and Regional Data; Row: Values of Shipments and...

    U.S. Energy Information Administration (EIA) Indexed Site

    ... generator fueled by combustible energy sources, such as diesel fuels and other fuel oils. ... Notes: To obtain the RSE percentage for any table cell, multiply the cell's corresponding ...

  16. Level: National and Regional Data; Row: Values of Shipments and...

    Gasoline and Diesel Fuel Update (EIA)

    ... has already been included as generating fuel (for example, coal). (c) 'Distillate Fuel ... Notes: To obtain the RSE percentage for any table cell, multiply the cell's corresponding ...

  17. The SiC Direct Target Prototype for SPES

    SciTech Connect (OSTI)

    Rizzi, V.; Andrighetto, A.; Barbui, M.; Carturan, S.; Cinausero, M.; Giacchini, M.; Gramegna, F.; Lollo, M.; Maggioni, G.; Prete, G.; Tonezzer, M.; Antonucci, C.; Cevolani, S.; Petrovich, C.; Biasetto, L.; Colombo, P.; Manzolaro, M.; Meneghetti, M.; Celona, L.; Chines, F.

    2007-10-26

    A R and D study for the realization of a Direct Target is in progress within the SPES project for RIBs production at the Laboratori Nazionali of Legnaro. A proton beam (40 MeV energy, 0.2 mA current) is supposed to impinge directly on a UCx multiple thin disks target, the power released by the proton beam is dissipated mainly through irradiation. A SiC target prototype with a 1:5 scale has been developed and tested. Thermal, mechanical and release calculations have been performed to fully characterize the prototype. An online test has been performed at the HRIBF facility of the Oak Ridge National Laboratory (ORNL), showing that our SiC target can sustain a proton beam current considerably higher than the maximum beam current used with the standard HRIBF target configuration.

  18. "RSE Table E13.2. Relative Standard Errors for Table E13.2;"

    U.S. Energy Information Administration (EIA) Indexed Site

    2. Relative Standard Errors for Table E13.2;" " Unit: Percents." " ",,,"Renewable Energy" ,,,"(excluding Wood" "Economic","Total Onsite",,"and" "Characteristic(a)","Generation","Cogeneration(b)","Other Biomass)(c)","Other(d)" ,"Total United States" "Value of Shipments and Receipts" "(million dollars)" " Under 20",15,15,58,37 "

  19. "RSE Table E13.3. Relative Standard Errors for Table E13.3;"

    U.S. Energy Information Administration (EIA) Indexed Site

    3. Relative Standard Errors for Table E13.3;" " Unit: Percents." ,"Total of" "Economic","Sales and","Utility","Nonutility" "Characteristic(a)","Transfers Offsite","Purchaser(b)","Purchaser(c)" ,"Total United States" "Value of Shipments and Receipts" "(million dollars)" " Under 20",4,4,10 " 20-49",33,35,70 " 50-99",10,12,10 "

  20. RSE Table S1.1 and S1.2. Relative Standard Errors for Tables S1.1 and S1.2

    U.S. Energy Information Administration (EIA) Indexed Site

    S1.1 and S1.2. Relative Standard Errors for Tables S1.1 and S1.2;" " Unit: Percents." " "," "," "," "," "," "," "," "," "," "," " " "," "," ",," "," ",," "," ",," ","Shipments" "SIC"," ",,"Net","Residual","Distillate",,"LPG

  1. RSE Table S2.1 and S2.2. Relative Standard Errors for Tables S2.1 and S2.2

    U.S. Energy Information Administration (EIA) Indexed Site

    S2.1 and S2.2. Relative Standard Errors for Tables S2.1 and S2.2;" " Unit: Percents." " "," "," ",," "," "," "," "," "," ",," " "SIC"," "," ","Residual","Distillate",,"LPG and",,"Coke"," " "Code(a)","Major Group and Industry","Total","Fuel Oil","Fuel

  2. RSE Table S3.1 and S3.2. Relative Standard Errors for Tables S3.1 and S3.2

    U.S. Energy Information Administration (EIA) Indexed Site

    S3.1 and S3.2. Relative Standard Errors for Tables S3.1 and S3.2;" " Unit: Percents." " "," " "SIC"," "," ","Net","Residual","Distillate",,"LPG and",,"Coke"," " "Code(a)","Major Group and Industry","Total","Electricity(b)","Fuel Oil","Fuel Oil(c)","Natural

  3. " Row: Selected SIC Codes; Column: Energy Sources;"

    U.S. Energy Information Administration (EIA) Indexed Site

    1. Fuel Consumption, 1998;" " Level: National Data; " " Row: Selected SIC Codes; Column: Energy Sources;" " Unit: Physical Units or Btu." " "," "," ",," "," "," "," "," "," "," "," ",," " " "," ",,,,,,,,"Coke" " "," ","

  4. On Techniques to Characterize and Correlate Grain Size, Grain Boundary Orientation and the Strength of the SiC Layer of TRISO Coated Particles: A Preliminary Study

    SciTech Connect (OSTI)

    I.J.van Rooyen; J.L. Dunzik Gougar; T. Trowbridge; Philip M van Rooyen

    2012-10-01

    The mechanical properties of the silicon carbide (SiC) layer of the TRi-ISOtropic (TRISO) coated particle (CP) for high temperature gas reactors (HTGR) are performance parameters that have not yet been standardized by the international HTR community. Presented in this paper are the results of characterizing coated particles to reveal the effect of annealing temperature (1000 to 2100C) on the strength and grain size of unirradiated coated particles. This work was further expanded to include possible relationships between the grain size and strength values. The comparative results of two strength measurement techniques and grain size measured by the Lineal intercept method are included. Preliminary grain boundary characterization results determined by electron backscatter diffraction (EBSD) are included. These results are also important for future fission product transport studies, as grain boundary diffusion is identified as a possible mechanism by which 110mAg, one of the fission activation products, might be released through intact SiC layers. Temperature is a parameter known to influence the grain size of SiC and therefore it is important to investigate the effect of high temperature annealing on the SiC grain size. Recommendations and future work will also be briefly discussed.

  5. Cellu-WHAT?-sic: Communicating the Biofuels Message to Local Stakeholders |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Cellu-WHAT?-sic: Communicating the Biofuels Message to Local Stakeholders Cellu-WHAT?-sic: Communicating the Biofuels Message to Local Stakeholders Breakout Session 3D-Building Market Confidence and Understanding III: Engaging Key Audiences in Bioenergy Cellu-WHAT?-sic: Communicating the Biofuels Message to Local Stakeholders Matt Merritt, Director, Public Relations, POET-DSM Advanced Biofuels merritt_biomass_2014.pdf (1.45 MB) More Documents & Publications Biomass

  6. High quality SiC microdisk resonators fabricated from monolithic epilayer wafers

    SciTech Connect (OSTI)

    Magyar, Andrew P.; Bracher, David; Lee, Jonathan C.; Hu, Evelyn L.; Aharonovich, Igor

    2014-02-03

    The exquisite mechanical properties of SiC have made it an important industrial material with applications in microelectromechanical devices and high power electronics. Recently, the optical properties of SiC have garnered attention for applications in photonics, quantum information, and spintronics. This work demonstrates the fabrication of microdisks formed from a p-N SiC epilayer material. The microdisk cavities fabricated from the SiC epilayer material exhibit quality factors of as high as 9200 and the approach is easily adaptable to the fabrication of SiC-based photonic crystals and other photonic and optomechanical devices.

  7. Tuning From Half-Metallic to Semiconducting Behavior in SiC Nanoribbon...

    Office of Scientific and Technical Information (OSTI)

    Title: Tuning From Half-Metallic to Semiconducting Behavior in SiC Nanoribbons Half-metallic nanoscale conductors, highly sought after for spintronic applications, are usually ...

  8. " Row: Selected SIC Codes; Column: Energy Sources;"

    U.S. Energy Information Administration (EIA) Indexed Site

    S5.1. Selected Byproducts in Fuel Consumption, 1998;" " Level: National Data; " " Row: Selected SIC Codes; Column: Energy Sources;" " Unit: Trillion Btu." " "," "," "," "," "," "," "," ","Waste"," ",," " " "," "," ","Blast"," "," ","Pulping Liquor","

  9. Porous SiC nanowire arrays as stable photocatalyst for water splitting under UV irradiation

    SciTech Connect (OSTI)

    Liu, Hailong; She, Guangwei; Mu, Lixuan; Shi, Wensheng

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer Arrays of porous SiC nanowires prepared by a facile in situ carbonizing method. Black-Right-Pointing-Pointer Utilizing the SiC nanowire arrays as photocatalysis for water splitting. Black-Right-Pointing-Pointer Excellent photocatalytic performance under the UV irradiation. Black-Right-Pointing-Pointer Very high stability of the SiC nanowire photocatalyst. -- Abstract: In this study, we report the fabrication and photocatalytic properties of the oriented arrays of SiC nanowires on the Si substrate. The SiC nanowire arrays were prepared by carbonizing the Si nanowire arrays with the graphite powder at 1250 Degree-Sign C. The as-prepared SiC nanowires are highly porous, which endows them with a high surface-to-volume ratio. Considering the large surface areas and the high stability, the porous SiC nanowire arrays were used as photocatalyst for water splitting under UV irradiation. It was found that such porous SiC structure exhibited an enhanced and extremely stable photocatalytic performance.

  10. Oxidation of SiC cladding under Loss of Coolant Accident (LOCA) conditions in LWRs

    SciTech Connect (OSTI)

    Lee, Y.; Yue, C.; Arnold, R. P.; McKrell, T. J.; Kazimi, M. S.

    2012-07-01

    An experimental assessment of Silicon Carbide (SiC) cladding oxidation rate in steam under conditions representative of Loss of Coolant Accidents (LOCA) in light water reactors (LWRs) was conducted. SiC oxidation tests were performed with monolithic alpha phase tubular samples in a vertical quartz tube at a steam temperature of 1140 deg. C and steam velocity range of 1 to 10 m/sec, at atmospheric pressure. Linear weight loss of SiC samples due to boundary layer controlled reaction of silica scale (SiO{sub 2} volatilization) was experimentally observed. The weight loss rate increased with increasing steam flow rate. Over the range of test conditions, SiC oxidation rates were shown to be about 3 orders of magnitude lower than the oxidation rates of zircaloy 4. A SiC volatilization correlation for developing laminar flow in a vertical channel is formulated. (authors)

  11. Smoothing single-crystalline SiC surfaces by reactive ion etching using pure NF{sub 3} and NF{sub 3}/Ar mixture gas plasmas

    SciTech Connect (OSTI)

    Tasaka, Akimasa; Kotaka, Yuki; Oda, Atsushi; Saito, Morihiro; Tojo, Tetsuro; Inaba, Minoru

    2014-09-01

    In pure NF{sub 3} plasma, the etching rates of four kinds of single-crystalline SiC wafer etched at NF{sub 3} pressure of 2 Pa were the highest and it decreased with an increase in NF{sub 3} pressure. On the other hand, they increased with an increase in radio frequency (RF) power and were the highest at RF power of 200 W. A smooth surface was obtained on the single-crystalline 4H-SiC after reactive ion etching at NF{sub 3}/Ar gas pressure of 2 Pa and addition of Ar to NF{sub 3} plasma increased the smoothness of SiC surface. Scanning electron microscopy observation revealed that the number of pillars decreased with an increase in the Ar-concentration in the NF{sub 3}/Ar mixture gas. The roughness factor (R{sub a}) values were decreased from 51.5 nm to 25.5 nm for the As-cut SiC, from 0.25 nm to 0.20 nm for the Epi-SiC, from 5.0 nm to 0.7 nm for the Si-face mirror-polished SiC, and from 0.20 nm to 0.16 nm for the C-face mirror-polished SiC by adding 60% Ar to the NF{sub 3} gas. Both the R{sub a} values of the Epi- and the C-face mirror-polished wafer surfaces etched using the NF{sub 3}/Ar (40:60) plasma were similar to that treated with mirror polishing, so-called the Catalyst-Referred Etching (CARE) method, with which the lowest roughness of surface was obtained among the chemical mirror polishing methods. Etching duration for smoothing the single-crystalline SiC surface using its treatment was one third of that with the CARE method.

  12. Value Engineering

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2002-12-30

    To establish Department of Energy (DOE) value engineering policy that establishs and maintains cost-effective value procedures and processes.

  13. Chemical reactivity of CVC and CVD SiC with UO2 at high temperatures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Silva, Chinthaka M.; Katoh, Yutai; Voit, Stewart L.; Snead, Lance L.

    2015-02-11

    Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300 C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity, according to microstructural investigations. But, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500 C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500more » C. Moreover, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.« less

  14. Creep behavior of a SiC particulate reinforced Al-2618 metal matrix composite

    SciTech Connect (OSTI)

    Zong, B.Y.; Derby, B.

    1997-01-01

    The creep behavior of Al-2618 reinforced by approximately 10 {micro}m SiC particles has been characterized by constant strain rate tests at 438 K and 493 K, followed by careful measurement of stress, work hardening during primary creep and extensions to failure. The high stress exponents recorded for secondary creep are comparable to literature values for other particle reinforced MMCs and decrease with test temperature. This can be interpreted by a combination of a recoverable internal stress generated by load partition and a creep threshold stress. A critical strain rate above which a sudden transition in creep behavior occurs is clearly visible at 10{sup {minus}4} s{sup {minus}1} with the material tested at 493 K. Identical material tested at 438 K shows a much less pronounced transition in behavior at strain rates above 3 {times} 10{sup {minus}7} s{sup {minus}1}. However, both these values are found to be consistent with a diffusional relaxation model for internal stress recovery during creep deformation. Data from these tests fall on a common activation line with other particle dispersed Al alloys consistent with a bulk diffusion relaxation process.

  15. Hydrothermal corrosion of SiC in LWR coolant environments in...

    Office of Scientific and Technical Information (OSTI)

    ... this phenomenon incited much interest in growing a thin carbon layer on the surface of SiC ... as a function of temperature and the crystal structure of the solid silica phase 30,32. ...

  16. Breakthrough in Power Electronics from SiC: May 25, 2004 - May 31, 2005

    SciTech Connect (OSTI)

    Marckx, D. A.

    2006-03-01

    This report explores the premise that silicon carbide (SiC) devices would reduce substantially the cost of energy of large wind turbines that need power electronics for variable speed generation systems.

  17. Incorporation of Catalytic Compounds in the Porosity of SiC Wall...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Incorporation of Catalytic Compounds in the Porosity of SiC Wall Flow Filters - 4 Way Catalyst and DeNOx Application examples Incorporation of Catalytic Compounds in the Porosity ...

  18. SIC ENABLED HIGH-FREQUENCY MEDIUM VOLTAGE DRIVE FOR HIGH-SPEED...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    A medium voltage drive system using SiC semiconductors and a high-speed motor to reduce ... MV high frequency drive, (ii) a high-speed motor, and (iii) advanced insulation systems. ...

  19. Numerical design of SiC bulk crystal growth for electronic applications

    SciTech Connect (OSTI)

    Wejrzanowski, T.; Grybczuk, M.; Kurzydlowski, K. J.; Tymicki, E.

    2014-10-06

    Presented study concerns numerical simulation of Physical Vapor Transport (PVT) growth of bulk Silicon Carbide (SiC) crystals. Silicon Carbide is a wide band gap semiconductor, with numerous applications due to its unique properties. Wider application of SiC is limited by high price and insufficient quality of the product. Those problems can be overcame by optimizing SiC production methods. Experimental optimization of SiC production is expensive because it is time consuming and requires large amounts of energy. Numerical modeling allows to learn more about conditions inside the reactor and helps to optimize the process at much lower cost. In this study several simulations of processes with different reactor geometries were presented along with discussion of reactor geometry influence on obtained monocrystal shape and size.

  20. Vehicle Technologies Office Merit Review 2014: Development of SiC Large Tapered Crystal Growth

    Office of Energy Efficiency and Renewable Energy (EERE)

    Presentation given by NASA at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about development of SiC large tapered crystal...

  1. Amorphization resistance of nano-engineered SiC under heavy ion irradiation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Imada, Kenta; Ishimaru, Manabu; Xue, Haizhou; Zhang, Yanwen; Shannon, Steven C.; Weber, William J.

    2016-06-19

    Silicon carbide (SiC) with a high-density of planar defects (hereafter, ‘nano-engineered SiC’) and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. Furthermore, it was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due tomore » the local increase in electronic energy loss that enhanced dynamic recovery.« less

  2. U.S. Department of Energy Accident Resistant SiC Clad Nuclear Fuel Development

    Broader source: Energy.gov [DOE]

    A significant effort is being placed on silicon carbide ceramic matrix composite (SiC CMC) nuclear fuel cladding by Light Water Reactor Sustainability (LWRS) Advanced Light Water Reactor Nuclear...

  3. Table A31. Total Inputs of Energy for Heat, Power, and Electricity Generation

    U.S. Energy Information Administration (EIA) Indexed Site

    Total Inputs of Energy for Heat, Power, and Electricity Generation" " by Value of Shipment Categories, Industry Group, and Selected Industries, 1991" " (Continued)" " (Estimates in Trillion Btu)",,,,"Value of Shipments and Receipts(b)" ,,,," (million dollars)" ,,,"-","-","-","-","-","-","RSE" "SIC"," "," "," "," ","

  4. U.S. Department of Energy Accident Resistant SiC Clad Nuclear Fuel Development

    SciTech Connect (OSTI)

    George W. Griffith

    2011-10-01

    A significant effort is being placed on silicon carbide ceramic matrix composite (SiC CMC) nuclear fuel cladding by Light Water Reactor Sustainability (LWRS) Advanced Light Water Reactor Nuclear Fuels Pathway. The intent of this work is to invest in a high-risk, high-reward technology that can be introduced in a relatively short time. The LWRS goal is to demonstrate successful advanced fuels technology that suitable for commercial development to support nuclear relicensing. Ceramic matrix composites are an established non-nuclear technology that utilizes ceramic fibers embedded in a ceramic matrix. A thin interfacial layer between the fibers and the matrix allows for ductile behavior. The SiC CMC has relatively high strength at high reactor accident temperatures when compared to metallic cladding. SiC also has a very low chemical reactivity and doesn't react exothermically with the reactor cooling water. The radiation behavior of SiC has also been studied extensively as structural fusion system components. The SiC CMC technology is in the early stages of development and will need to mature before confidence in the developed designs can created. The advanced SiC CMC materials do offer the potential for greatly improved safety because of their high temperature strength, chemical stability and reduced hydrogen generation.

  5. A SiC MOSFET Based Inverter for Wireless Power Transfer Applications

    SciTech Connect (OSTI)

    Onar, Omer C; Chinthavali, Madhu Sudhan; Campbell, Steven L; Ning, Puqi; White, Cliff P; Miller , John M.

    2014-01-01

    In a wireless power transfer (WPT) system, efficiency of the power conversion stages is crucial so that the WPT technology can compete with the conventional conductive charging systems. Since there are 5 or 6 power conversion stages, each stage needs to be as efficient as possible. SiC inverters are crucial in this case; they can handle high frequency operation and they can operate at relatively higher temperatures resulting in reduces cost and size for the cooling components. This study presents the detailed power module design, development, and fabrication of a SiC inverter. The proposed inverter has been tested at three center frequencies that are considered for the WPT standardization. Performance of the inverter at the same target power transfer level is analyzed along with the other system components. In addition, another SiC inverter has been built in authors laboratory by using the ORNL designed and developed SiC modules. It is shown that the inverter with ORNL packaged SiC modules performs simular to that of the inverter having commercially available SiC modules.

  6. Strain-engineered band parameters of graphene-like SiC monolayer

    SciTech Connect (OSTI)

    Behera, Harihar; Mukhopadhyay, Gautam

    2014-10-06

    Using full-potential density functional theory (DFT) calculations we show that the band gap and effective masses of charge carriers in SiC monolayer (ML-SiC) in graphene-like two-dimensional honeycomb structure are tunable by strain engineering. ML-SiC was found to preserve its flat 2D graphene-like structure under compressive strain up to 7%. A transition from indirect-to-direct gap-phase is predicted to occur for a strain value lying within the interval (1.11 %, 1.76%). In both gap-phases band gap decreases with increasing strain, although the rate of decrease is different in the two gap-phases. Effective mass of electrons show a non-linearly decreasing trend with increasing tensile strain in the direct gap-phase. The strain-sensitive properties of ML-SiC, may find applications in future strain-sensors, nanoelectromechanical systems (NEMS) and nano-optomechanical systems (NOMS) and other nano-devices.

  7. Level: National Data and Regional Totals; Row: NAICS Codes, Value...

    Annual Energy Outlook [U.S. Energy Information Administration (EIA)]

    ... Receipts(c) Switchable Switchable Gas Fuel Oil Fuel Oil Coal LPG Breeze Other(d) ... Notes: To obtain the RSE percentage for any table cell, multiply the cell's corresponding ...

  8. Level: National Data and Regional Totals; Row: NAICS Codes, Value...

    Annual Energy Outlook [U.S. Energy Information Administration (EIA)]

    ... Switchable Switchable Receipts(d) Gas Fuel Oil Fuel Oil Coal Breeze Other(e) LPG ... Notes: To obtain the RSE percentage for any table cell, multiply the cell's corresponding ...

  9. Level: National and Regional Data; Row: Values of Shipments and...

    Annual Energy Outlook [U.S. Energy Information Administration (EIA)]

    ... Fuel Oil' includes Nos. 1, 2, and 4 fuel oils and Nos. 1, 2, and 4 diesel fuels. ... Notes: To obtain the RSE percentage for any table cell, multiply the cell's corresponding ...

  10. Level: National and Regional Data; Row: Values of Shipments and...

    Annual Energy Outlook [U.S. Energy Information Administration (EIA)]

    ... refineries (e.g., crude oil converted to residual and distillate fuel oils) are excluded. ... Notes: To obtain the RSE percentage for any table cell, multiply the cell's corresponding ...

  11. Manufacturing Energy Consumption Survey (MECS) - Data - U.S. Energy

    U.S. Energy Information Administration (EIA) Indexed Site

    Information Administration (EIA) 8 MECS Survey Data 2010 | 2006 | 2002 | 1998 | 1994 | 1991 | Archive Data Methodology & Forms + EXPAND ALL Consumption of Energy for All Purposes (First Use) Values SIC RSE Number of Establishments by First Use of Energy for All Purposes (Fuel and Nonfuel), 1998; Level: National Data; Row: NAICS Codes; Column: Energy Sources and Shipments; Unit: Establishment Counts XLS XLS XLS First Use of Energy for All Purposes (Fuel and Nonfuel), 1998; Level: National

  12. Effects of irradiation on the mechanical behavior of twined SiC nanowires

    SciTech Connect (OSTI)

    Jin Enze; Niu Lisha; Lin Enqiang; Duan Zheng [AML, Department of Engineering Mechanics, Tsinghua University, Beijing 100084 (China)

    2013-03-14

    Irradiation is known to bring new features in one-dimensional nano materials. In this study, we used molecular dynamics simulations to investigate the irradiation effects on twined SiC nanowires. Defects tend to accumulate from outside toward inside of the twined SiC nanowires with increasing irradiation dose, leading to a transition from brittle to ductile failure under tensile load. Atomic chains are formed in the ductile failure process. The first-principles calculations show that most of the atomic chains are metallic.

  13. Vehicle Technologies Office Merit Review 2016: Advanced Low-Cost SiC and

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives | Department of Energy Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives Vehicle Technologies Office Merit Review 2016: Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives Presentation given by Wolfspeed at the 2016 DOE Vehicle Technologies Office and Hydrogen and Fuel Cells Program Annual Merit Review and Peer

  14. Identification of luminescent surface defect in SiC quantum dots

    SciTech Connect (OSTI)

    Dai, Dejian; Guo, Xiaoxiao; Fan, Jiyang

    2015-02-02

    The surface defect that results in the usually observed blue luminescence in the SiC quantum dots (QDs) remains unclear. We experimentally identify that the surface defect C=O (in COO) is responsible for this constant blue luminescence. The HOC=O [n{sub (OH)} ? ?*{sub (CO)}] interaction between the hydroxyl and carbonyl groups changes the energy levels of C=O and makes the light absorption/emission arise at around 326/438?nm. Another surface defect (SiSi) is identified and its light absorption contributes to both C=O-related luminescence and quantum-confinement luminescence of the SiC QDs.

  15. Performance Comparison Study of SiC and Si Technology for an IPM Drive System

    SciTech Connect (OSTI)

    Chinthavali, Madhu Sudhan; Otaduy, Pedro J; Ozpineci, Burak

    2010-01-01

    The impact of the new SiC material based devices on a full system needs to be evaluated in order to assess the benefits of replacing Silicon (Si) devices with WBG devices. In this paper the results obtained with a full-system model simulated for an aggressive US06 drive cycle are presented. The system model includes a motor/generator model and inverter loss model developed using actual measured data. The results provide an insight to the difference in performance of a permanent magnet traction drive system using SiC versus Si devices.

  16. Incorporation of Catalytic Compounds in the Porosity of SiC Wall Flow

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Filters - 4 Way Catalyst and DeNOx Application examples | Department of Energy Incorporation of Catalytic Compounds in the Porosity of SiC Wall Flow Filters - 4 Way Catalyst and DeNOx Application examples Incorporation of Catalytic Compounds in the Porosity of SiC Wall Flow Filters - 4 Way Catalyst and DeNOx Application examples 2007 Diesel Engine-Efficiency & Emissions Research Conference (DEER 2007). 13-16 August, 2007, Detroit, Michigan. Sponsored by the U.S. Department of Energy's

  17. VALUE STUDY

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PREPARED FOR: DEPARTMENT OF ENERGY OFFICE OF CONTRACT RESOURCES AND RESOURCE MANAGEMENT SEPTEMBER 2008 UPDATE BY: AON CONSULTING INC. FEBRUARY 1999 UPDATED SEPTEMBER 29, 2008 VALUE STUDY DESK MANUAL Prepared for: DEPARTMENT OF ENERGY By: BUCK CONSULTANTS Under DE-AC01-96AD38107 Update Prepared for: DOE By: AON CONSULTING, INC. Under Delivery Order DE-BP01-08MA345678, Contract No. DE-AB01-08-ME11881 Contents PART I Overview of Value Study Illustrative Flow

  18. Value Engineering

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2004-01-07

    To establish Department of Energy (DOE) value engineering policy that meets the requirements of Public Law 104-106, Section 4306 as codified by 41 United States Code 432. Canceled by DOE N 251.94. Does not cancel other directives.

  19. Impact of SiC Devices on Hybrid Electric and Plug-In Hybrid Electric Vehicles

    SciTech Connect (OSTI)

    Zhang, Hui; Tolbert, Leon M; Ozpineci, Burak

    2008-01-01

    The application of SiC devices (as battery interface, motor controller, etc.) in a hybrid electric vehicle (HEV) will benefit from their high-temperature capability, high-power density, and high efficiency. Moreover, the light weight and small volume will affect the whole power train system in a HEV, and thus performance and cost. In this work, the performance of HEVs is analyzed using PSAT (powertrain system analysis tool, vehicle simulation software). Power loss models of a SiC inverter are incorporated into PSAT powertrain models in order to study the impact of SiC devices on HEVs. Two types of HEVs are considered. One is the 2004 Toyota Prius HEV, the other is a plug-in HEV (PHEV), whose powertrain architecture is the same as that of the 2004 Toyota Prius HEV. The vehicle-level benefits from the introduction of the SiC devices are demonstrated by simulations. Not only the power loss in the motor controller but also those in other components in the vehicle powertrain are reduced. As a result, the system efficiency is improved and the vehicles consume less energy and emit less harmful gases. It also makes it possible to improve the system compactness with simplified thermal management system. For the PHEV, the benefits are more distinct. Especially, the size of battery bank can be reduced for optimum design.

  20. High-temperature corrosion of Nicalon reg sign /SiC composites

    SciTech Connect (OSTI)

    Lowden, R.A.; James, R.D.

    1991-08-01

    The elevated-temperature stability of Nicalon{reg sign} (Nippon Carbon Company, Tokyo, Japan)/SiC composites with a graphitic carbon interface layer in oxidizing and simulated fossil fuel environments was investigated. Composite specimens with and without an external SiC surface coating were oxidizing in air and exposed to a variety of combustion environments at a temperature of 1273 K. A burner rig furnace was constructed for simulating corrosive fossil fuel environments containing water vapor, sulfur, and sodium. The mechanical properties of unprotected Nicalon{reg sign}/SiC specimens were degraded after short periods of exposure, due to the oxidation of the carbon interface coating. Longer exposures resulted in the oxidation of the fibers and matrix to form silica, which with time bonded the components together and produced brittle behavior. Combustion environments hastened the embrittlement of composites without an external SiC coating. Conversely, the specimens protected by a chemical vapor deposition (CVD) SiC surface coating exhibited only small decreases in strength after oxidation or corrosion in combustion environments. The SiC layer sealed off the surface of the composites, protecting the exposed fibers' ends, and thus prevented oxidation at the fiber-matrix interface. 26 refs., 11 figs., 1 tab.

  1. SiC MODIFICATIONS TO MELCOR FOR SEVERE ACCIDENT ANALYSIS APPLICATIONS

    SciTech Connect (OSTI)

    Brad J. Merrill; Shannon M Bragg-Sitton

    2013-09-01

    The Department of Energy (DOE) Office of Nuclear Energy (NE) Light Water Reactor (LWR) Sustainability Program encompasses strategic research focused on improving reactor core economics and safety margins through the development of an advanced fuel cladding system. The Fuels Pathway within this program focuses on fuel system components outside of the fuel pellet, allowing for alteration of the existing zirconium-based clad system through coatings, addition of ceramic sleeves, or complete replacement (e.g. fully ceramic cladding). The DOE-NE Fuel Cycle Research & Development (FCRD) Advanced Fuels Campaign (AFC) is also conducting research on materials for advanced, accident tolerant fuels and cladding for application in operating LWRs. To aide in this assessment, a silicon carbide (SiC) version of the MELCOR code was developed by substituting SiC in place of Zircaloy in MELCOR’s reactor core oxidation and material property routines. The purpose of this development effort is to provide a numerical capability for estimating the safety advantages of replacing Zr-alloy components in LWRs with SiC components. This modified version of the MELCOR code was applied to the Three Mile Island (TMI-2) plant accident. While the results are considered preliminary, SiC cladding showed a dramatic safety advantage over Zircaloy cladding during this accident.

  2. The correlation of epitaxial graphene properties and morphology of SiC (0001)

    SciTech Connect (OSTI)

    Guo, Y.; Guo, L. W., E-mail: lwguo@iphy.ac.cn, E-mail: xlchen@iphy.ac.cn; Huang, J.; Jia, Y. P.; Lin, J. J.; Lu, W.; Li, Z. L. [Research and Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Yang, R. [Nanoscale Physics and Devices Laboratory, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Chen, X. L., E-mail: lwguo@iphy.ac.cn, E-mail: xlchen@iphy.ac.cn [Research and Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

    2014-01-28

    The electronic properties of epitaxial graphene (EG) on SiC (0001) depend sensitively on the surface morphology of SiC substrate. Here, 23 layers of graphene were grown on on-axis 6H-SiC with different step densities realized through controlling growth temperature and ambient pressure. We show that epitaxial graphene on SiC (0001) with low step density and straight step edge possesses fewer point defects laying mostly on step edges and higher carrier mobility. A relationship between step density and EG mobility is established. The linear scan of Raman spectra combined with the atomic force microscopy morphology images revealed that the Raman fingerprint peaks are nearly the same on terraces, but shift significantly while cross step edges, suggesting the graphene is not homogeneous in strain and carrier concentration over terraces and step edges of substrates. Thus, control morphology of epitaxial graphene on SiC (0001) is a simple and effective method to pursue optimal route for high quality graphene and will be helpful to prepare wafer sized graphene for device applications.

  3. Chemical reactivity of CVC and CVD SiC with UO2 at high temperatures

    SciTech Connect (OSTI)

    Silva, Chinthaka M.; Katoh, Yutai; Voit, Stewart L.; Snead, Lance L.

    2015-02-11

    Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300 C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity, according to microstructural investigations. But, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500 C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500 C. Moreover, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.

  4. RSE Table E8.1 and E8.2. Relative Standard Errors for Tables E8.1 and E8.2

    U.S. Energy Information Administration (EIA) Indexed Site

    E8.1 and E8.2. Relative Standard Errors for Tables E8.1 and E8.2;" " Unit: Percents." " ",," "," ",," "," " "Economic",,"Residual","Distillate",,"LPG and" "Characteristic(a)","Electricity","Fuel Oil","Fuel Oil(b)","Natural Gas(c)","NGL(d)","Coal" ,"Total United States" "Value of Shipments and Receipts"

  5. Analysis and recommendations for DPA calculations in SiC

    SciTech Connect (OSTI)

    Heinisch, H.L.

    1998-09-01

    Recent modeling results, coupled with the implications of available experimental results, provide sufficient information to achieve consensus on the values of threshold displacement energies to use in displacements per atom (DPA) calculations. The values recommended here, 20 eV for C and 35 eV for Si, will be presented for adoption by the international fusion materials community at the next IEA SiC/SiC workshop.

  6. Diffusion of Ag, Au and Cs implants in MAX phase Ti3SiC2 (Journal...

    Office of Scientific and Technical Information (OSTI)

    Title: Diffusion of Ag, Au and Cs implants in MAX phase Ti3SiC2 MAX phases (M: early transition metal; A: elements in group 13 or 14; X: C or N), such as titanium silicon carbide ...

  7. Distribution of Pd, Ag & U in the SiC Layer of an Irradiated TRISO Fuel Particle

    SciTech Connect (OSTI)

    Thomas M. Lillo; Isabella J. van Rooyen

    2014-08-01

    The distribution of silver, uranium and palladium in the silicon carbide (SiC) layer of an irradiated TRISO fuel particle was studied using samples extracted from the SiC layer using focused ion beam (FIB) techniques. Transmission electron microscopy in conjunction with energy dispersive x-ray spectroscopy was used to identify the presence of the specific elements of interest at grain boundaries, triple junctions and precipitates in the interior of SiC grains. Details on sample fabrication, errors associated with measurements of elemental migration distances and the distances migrated by silver, palladium and uranium in the SiC layer of an irradiated TRISO particle from the AGR-1 program are reported.

  8. Fabrication of a single layer graphene by copper intercalation on a SiC(0001) surface

    SciTech Connect (OSTI)

    Yagyu, Kazuma; Tochihara, Hiroshi; Tomokage, Hajime; Suzuki, Takayuki; Tajiri, Takayuki; Kohno, Atsushi; Takahashi, Kazutoshi

    2014-02-03

    Cu atoms deposited on a zero layer graphene grown on a SiC(0001) substrate, intercalate between the zero layer graphene and the SiC substrate after the thermal annealing above 600?C, forming a Cu-intercalated single layer graphene. On the Cu-intercalated single layer graphene, a graphene lattice with superstructure due to moir pattern is observed by scanning tunneling microscopy, and specific linear dispersion at the K{sup } point as well as a characteristic peak in a C{sub 1s} core level spectrum, which is originated from a free-standing graphene, is confirmed by photoemission spectroscopy. The Cu-intercalated single layer graphene is found to be n-doped.

  9. Fabrication and Evaluation of a High Performance SiC Inverter for Wireless Power Transfer Applications

    SciTech Connect (OSTI)

    Onar, Omer C; Campbell, Steven L; Ning, Puqi; Miller, John M; Liang, Zhenxian

    2013-01-01

    In this study, a high power density SiC high efficiency wireless power transfer converter system via inductive coupling has been designed and developed. The detailed power module design, cooling system design and power stage development are presented. The successful operation of rated power converter system demonstrates the feasible wireless charging plan. One of the most important part of this study is the wind bandgap devices packaged at the Oak Ridge National Laboratory (ORNL) using the in-house packaging technologies by employing the bare SiC dies acquired from CREE, which are rated at 50 A / 1200 V each. These packaged devices are also inhouse tested and characterized using ORNL s Device Characterization Facility. The successful operation of the proposed inverter is experimentally verified and the efficiency and operational characteristics of the inverter are also revealed.

  10. N-V{sub Si}-related center in non-irradiated 6H SiC nanostructure

    SciTech Connect (OSTI)

    Bagraev, Nikolay; Danilovskii, Eduard; Gets, Dmitrii; Klyachkin, Leonid; Malyarenko, Anna; Kalabukhova, Ekaterina; Shanina, Bella; Savchenko, Dariya

    2014-02-21

    We present the first findings of the vacancy-related centers identified by the electron spin resonance (ESR) and electrically-detected (ED) ESR method in the non-irradiated 6H-SiC nanostructure. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the ?-barriers heavily doped with boron on the surface of the n-type 6H-SiC (0001) wafer. The EDESR method by measuring the only magnetoresistance of the 6H SiC nanostructure under the high frequency generation from the ?-barriers appears to allow the identification of the silicon vacancy centers as well as the triplet center with spin state S=1. The same triplet center that is characterized by the larger value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. The hyperfine (hf) lines in the ESR and EDESR spectra originating from the hf interaction with the {sup 14}N nucleus allow us to attribute this triplet center to the N-V{sub Si} defect.

  11. INTEGRATED 15KV SIC VSD AND HIGH-SPEED MW MOTOR FOR GAS COMPRESSION SYSTEMS

    Broader source: Energy.gov [DOE]

    Eaton Corporation – Arden, NC A 15 kilovolt (kV) SiC variable-speed drive will be integrated with a high-speed megawatt motor for gas compression applications. This new drive technology will be developed and tested to operate at greater than 99% efficiency and achieve 10 times the power density of competing drives, providing an integrated, highly-efficient motor and drive system for natural gas applications. Fact sheet coming soon.

  12. Dimensional isotropy of 6H and 3C SiC under neutron irradiation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Snead, Lance L.; Katoh, Yutai; Koyanagi, Takaaki; Terrani, Kurt A.; Specht, Eliot D.

    2016-01-16

    This investigation experimentally determines the as-irradiated crystal axes dimensional change of the common polytypes of SiC considered for nuclear application. Single crystal α-SiC (6H), β-SiC (3C), CVD β-SiC, and single crystal Si have been neutron irradiated near 60 °C from 2 × 1023 to 2 × 1026 n/m2 (E > 0.1 MeV), or about 0.02–20 dpa, in order to study the effect of irradiation on bulk swelling and strain along independent crystalline axes. Single crystal, powder diffractometry and density measurement have been carried out. For all neutron doses where the samples remained crystalline all SiC materials demonstrated equivalent swelling behavior.more » Moreover the 6H–SiC expanded isotropically. The magnitude of the swelling followed a ~0.77 power law against dose consistent with a microstructure evolution driven by single interstitial (carbon) mobility. Extraordinarily large ~7.8% volume expansion in SiC was observed prior to amorphization. Above ~0.9 × 1025 n/m2 (E > 0.1 MeV) all SiC materials became amorphous with an identical swelling: a 11.7% volume expansion, lowering the density to 2.84 g/cm3. As a result, the as-amorphized density was the same at the 2 × 1025 and 2 × 1026 n/m2 (E > 0.1 MeV) dose levels.« less

  13. Controlled synthesis and decoupling of monolayer graphene on SiC(0001)

    SciTech Connect (OSTI)

    Oida, S.; Hannon, J. B.; Tromp, R. M. [IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

    2014-04-21

    We describe a process for the growth of a single, electronically decoupled graphene layer on SiC(0001). The method involves annealing in disilane to (1) prepare flat, clean substrates, (2) grow a single graphene layer, and (3) electronically decouple the graphene from the substrate. This approach uses a single process gas, at ?Torr pressures, with modest substrate temperatures, thus affecting a drastic simplification over other processes described in the literature.

  14. A SiC NMOS Linear Voltage Regulator for High-Temperature Applications

    SciTech Connect (OSTI)

    Valle-Mayorga, JA; Rahman, A; Mantooth, HA

    2014-05-01

    The first SiC integrated circuit linear voltage regulator is reported. The voltage regulator uses a 20-V supply and generates an output of 15 V, adjustable down to 10 V. It was designed for loads of up to 2 A over a temperature range of 25-225 degrees C. It was, however, successfully tested up to 300 degrees C. The voltage regulator demonstrated load regulations of 1.49% and 9% for a 2-A load at temperatures of 25 and 300 degrees C, respectively. However, the load regulation is less than 2% up to 300 degrees C for a 1-A load. The line regulation with a 2-A load at 25 and 300 degrees C was 17 and 296 mV/V, respectively. The regulator was fabricated in a Cree 4H-SiC 2-mu m experimental process and consists of 1000, 32/2-mu m NMOS depletion MOSFETs as the pass device, an integrated error amplifier with enhancement MOSFETs, and resistor loads, and uses external feedback and compensation networks to ensure operational integrity. It was designed to be integrated with high-voltage vertical power MOSFETs on the same SiC substrate. It also serves as a guide to future attempts for voltage regulation in any type of integrated SiC circuitry.

  15. Early implementation of SiC cladding fuel performance models in BISON

    SciTech Connect (OSTI)

    Powers, Jeffrey J.

    2015-09-18

    SiC-based ceramic matrix composites (CMCs) [5–8] are being developed and evaluated internationally as potential LWR cladding options. These development activities include interests within both the DOE-NE LWR Sustainability (LWRS) Program and the DOE-NE Advanced Fuels Campaign. The LWRS Program considers SiC ceramic matrix composites (CMCs) as offering potentially revolutionary gains as a cladding material, with possible benefits including more efficient normal operating conditions and higher safety margins under accident conditions [9]. Within the Advanced Fuels Campaign, SiC-based composites are a candidate ATF cladding material that could achieve several goals, such as reducing the rates of heat and hydrogen generation due to lower cladding oxidation rates in HT steam [10]. This work focuses on the application of SiC cladding as an ATF cladding material in PWRs, but these work efforts also support the general development and assessment of SiC as an LWR cladding material in a much broader sense.

  16. Effect of neutron irradiation on defect evolution in Ti3SiC2 and Ti2AlC

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Tallman, Darin J.; He, Lingfeng; Garcia-Diaz, Brenda L.; Hoffman, Elizabeth N.; Kohse, Gordon; Sindelar, Robert L.; Barsoum, Michel W.

    2015-10-23

    Here, we report on the characterization of defects formed in polycrystalline Ti3SiC2 and Ti2AlC samples exposed to neutron irradiation – up to 0.1 displacements per atom (dpa) at 350 ± 40 °C or 695 ± 25 °C, and up to 0.4 dpa at 350 ± 40 °C. Black spots are observed in both Ti3SiC2 and Ti2AlC after irradiation to both 0.1 and 0.4 dpa at 350 °C. After irradiation to 0.1 dpa at 695 °C, small basal dislocation loops, with a Burgers vector of b = 1/2 [0001] are observed in both materials. At 9 ± 3 and 10 ±more » 5 nm, the loop diameters in the Ti3SiC2 and Ti2AlC samples, respectively, were comparable. At 1 × 1023 loops/m3, the dislocation loop density in Ti2AlC was ≈1.5 orders of magnitude greater than in Ti3SiC2, at 3 x 1021 loops/m3. After irradiation at 350 °C, extensive microcracking was observed in Ti2AlC, but not in Ti3SiC2. The room temperature electrical resistivities increased as a function of neutron dose for all samples tested, and appear to saturate in the case of Ti3SiC2. The MAX phases are unequivocally more neutron radiation tolerant than the impurity phases TiC and Al2O3. Based on these results, Ti3SiC2 appears to be a more promising MAX phase candidate for high temperature nuclear applications than Ti2AlC.« less

  17. Characteristics RSE Column Factor: All Vehicle Types

    U.S. Energy Information Administration (EIA) Indexed Site

    or More ... 19.1 13.0 12.3 0.7 1.0 1.7 Q 2.7 Q 21.8 Below Poverty Line 100 Percent ... 12.4 9.5 8.9 0.5 Q Q Q 1.8 Q...

  18. Abundances of presolar graphite and SiC from supernovae and AGB stars in the Murchison meteorite

    SciTech Connect (OSTI)

    Amari, Sachiko; Zinner, Ernst; Gallino, Roberto

    2014-05-02

    Pesolar graphite grains exhibit a range of densities (1.65 – 2.20 g/cm{sup 3}). We investigated abundances of presolar graphite grains formed in supernovae and in asymptotic giant branch (AGB) stars in the four density fractions KE3, KFA1, KFB1 and KFC1 extracted from the Murchison meteorite to probe dust productions in these stellar sources. Seventy-six and 50% of the grains in the low-density fractions KE3 and KFA1, respectively, are supernova grains, while only 7.2% and 0.9% of the grains in the high-density fractions KFB1 and KFC1 have a supernova origin. Grains of AGB star origin are concentrated in the high-density fractions KFB1 and KFC1. From the C isotopic distributions of these fractions and the presence of s-process Kr with {sup 86}Kr/{sup 82}Kr = 4.43±0.46 in KFC1, we estimate that 76% and 80% of the grains in KFB1 and KFC1, respectively, formed in AGB stars. From the abundance of graphite grains in the Murchison meteorite, 0.88 ppm, the abundances of graphite from supernovae and AGB stars are 0.24 ppm and 0.44 ppm, respectively: the abundances of graphite in supernovae and AGB stars are comparable. In contrast, it has been known that 1% of SiC grains formed in supernovae and 95% formed in AGB stars in meteorites. Since the abundance of SiC grains is 5.85 ppm in the Murchison meteorite, the abundances of SiC from supernovae and AGB stars are 0.063 ppm and 5.6 ppm, respectively: the dominant source of SiC grains is AGB stars. Since SiC grains are harder and likely to survive better in space than graphite grains, the abundance of supernova graphite grains, which is higher than that of supernova SiC grains, indicates that supernovae proficiently produce graphite grains. Graphite grains from AGB stars are, in contrast, less abundant that SiC grains from AGB stars (0.44 ppm vs. 5.6 ppm). It is difficult to derive firm conclusions for graphite and SiC formation in AGB stars due to the difference in susceptibility to grain destruction. Metallicity of

  19. " Row: Selected SIC Codes; Column: Energy Sources and Shipments;"

    U.S. Energy Information Administration (EIA) Indexed Site

    1. First Use of Energy for All Purposes (Fuel and Nonfuel), 1998;" " Level: National Data; " " Row: Selected SIC Codes; Column: Energy Sources and Shipments;" " Unit: Physical Units or Btu." " "," "," "," "," "," "," "," "," "," "," ",," " " "," "," ",," "," ",," ","

  20. " Row: Selected SIC Codes; Column: Energy Sources and Shipments;"

    U.S. Energy Information Administration (EIA) Indexed Site

    2. First Use of Energy for All Purposes (Fuel and Nonfuel), 1998;" " Level: National Data; " " Row: Selected SIC Codes; Column: Energy Sources and Shipments;" " Unit: Trillion Btu." " "," "," "," "," "," "," "," "," "," "," ",," " " "," "," ",," "," ",," "," ",,"

  1. Characterization Of Superconducting Samples With SIC System For Thin Film Developments: Status And Recent Results

    SciTech Connect (OSTI)

    Phillips, H. Lawrence; Reece, Charles E.; Valente-Feliciano, Anne-Marie; Xiao, Binping; Eremeev, Grigory V.

    2014-02-01

    Within any thin film development program directed towards SRF accelerating structures, there is a need for an RF characterization device that can provide information about RF properties of small samples. The current installation of the RF characterization device at Jefferson Lab is Surface Impedance Characterization (SIC) system. The data acquisition environment for the system has recently been improved to allow for automated measurement, and the system has been routinely used for characterization of bulk Nb, films of Nb on Cu, MgB{sub 2}, NbTiN, Nb{sub 3}Sn films, etc. We present some of the recent results that illustrate present capabilities and limitations of the system.

  2. A model to non-uniform Ni Schottky contact on SiC annealed at elevated temperatures

    SciTech Connect (OSTI)

    Pristavu, G.; Brezeanu, G.; Badila, M.; Pascu, R.; Danila, M.; Godignon, P.

    2015-06-29

    Ni Schottky contacts on SiC have a nonideal behavior, with strong temperature dependence of the electrical parameters, caused by a mixed barrier on the contact area and interface states. A simple analytical model that establishes a quantitative correlation between Schottky contact parameter variation with temperature and barrier height non-uniformity is proposed. A Schottky contact surface with double Schottky barrier is considered. The main model parameters are the lower barrier (Φ{sub Bn,l}) and a p factor which quantitatively evaluates the barrier non-uniformity on the Schottky contact area. The model is validated on Ni/4H-SiC Schottky contacts, post metallization sintered at high temperatures. The measured I{sub F}–V{sub F}–T characteristics, selected so as not to be affected by interface states, were used for model correlation. An inhomogeneous double Schottky barrier (with both nickel silicide and Ni droplets at the interface) is formed by a rapid thermal annealing (RTA) at 750 °C. High values of the p parameter are obtained from samples annealed at this temperature, using the proposed model. A significant improvement in the electrical properties occurs following RTA at 800 °C. The expansion of the Ni{sub 2}Si phase on the whole contact area is evinced by an X-Ray diffraction investigation. In this case, the p factor is much lower, attesting the uniformity of the contact. The model makes it possible to evaluate the real Schottky barrier, for a homogenous Schottky contact. Using data measured on samples annealed at 800 °C, a true barrier height of around 1.73 V has been obtained for Ni{sub 2}Si/4H-SiC Schottky contacts.

  3. Two-stage sintering inhibits abnormal grain growth during beta to alpha transformation in SiC

    SciTech Connect (OSTI)

    Kueck, Aaron M.; De Jonghe, Lutgard C.

    2007-09-17

    Free sintering of SiC with Al, B, and C additions in two successive stages, first under nitrogen and then under argon, produced a near full-density ceramic with equiaxed grain structure. The beta to alpha transformation proceeded to completion; however, the grain shape remained equiaxed due to the action of nitrogen present during the first stage of sintering. It is found that the beta to alpha transformation is necessary but not sufficient for producing the microstructure of interlocking plates found in high-toughness SiC.

  4. Effect of carbon ion irradiation on Ag diffusion in SiC

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Leng, Bin; Ko, Hyunseok; Gerczak, Tyler J.; Deng, Jie; Giordani, Andrew J.; Hunter, Jerry L.; Morgan, Dane; Szlufarska, Izabela; Sridharan, Kumar

    2015-11-14

    Transport of Ag fission product through the silicon-carbide (SiC) diffusion barrier layer in TRISO fuel particles is of considerable interest given the application of this fuel type in high temperature gas-cooled reactor (HTGR) and other future reactor concepts. The reactor experiments indicate that radiation may play an important role in release of Ag; however so far the isolated effect of radiation on Ag diffusion has not been investigated in controlled laboratory experiments. In this study, we investigate the diffusion couples of Ag and polycrystalline 3C–SiC, as well as Ag and single crystalline 4H–SiC samples before and after irradiation with C2+more » ions. The diffusion couple samples were exposed to temperatures of 1500 °C, 1535 °C, and 1569 °C, and the ensuing diffusion profiles were analyzed by secondary ion mass spectrometry (SIMS). We found that diffusion coefficients calculated from these measurements indicate that Ag diffusion was greatly enhanced by carbon irradiation due to a combined effect of radiation damage on diffusion and the presence of grain boundaries in polycrystalline SiC samples.« less

  5. Structural consequences of hydrogen intercalation of epitaxial graphene on SiC(0001)

    SciTech Connect (OSTI)

    Emery, Jonathan D. E-mail: bedzyk@northwestern.edu; Johns, James E.; McBriarty, Martin E.; Hersam, Mark C.; Wheeler, Virginia H.; Kurt Gaskill, D.; Detlefs, Blanka; Bedzyk, Michael J. E-mail: bedzyk@northwestern.edu

    2014-10-20

    The intercalation of various atomic species, such as hydrogen, to the interface between epitaxial graphene (EG) and its SiC substrate is known to significantly influence the electronic properties of the graphene overlayers. Here, we use high-resolution X-ray reflectivity to investigate the structural consequences of the hydrogen intercalation process used in the formation of quasi-free-standing (QFS) EG/SiC(0001). We confirm that the interfacial layer is converted to a layer structurally indistinguishable from that of the overlying graphene layers. This newly formed graphene layer becomes decoupled from the SiC substrate and, along with the other graphene layers within the film, is vertically displaced by ?2.1?. The number of total carbon layers is conserved during the process, and we observe no other structural changes such as interlayer intercalation or expansion of the graphene d-spacing. These results clarify the under-determined structure of hydrogen intercalated QFS-EG/SiC(0001) and provide a precise model to inform further fundamental and practical understanding of the system.

  6. Report on status of execution of SiC step document

    SciTech Connect (OSTI)

    Katoh, Yutai; Terrani, Kurt A.

    2015-02-01

    Advanced fuel claddings made entirely or mainly of silicon carbide (SiC) ceramics and/or composites are considered very attractive elements of the accident-tolerant fuels for the light water reactors. In order to translate the promise of SiC composite materials into a reliable fuel cladding, a coordinated program of component level design and materials development must be carried out with many key feasibility issues addressed a-priori to inform the process. With the primary objective of developing a draft blueprint of a technical program that addresses the critical feasibility issues; assesses design and performance issues related with manufacturing, operating, and off-normal events; and advances the technological readiness levels in essential technology elements, a draft plan for the Systematic Technology Evaluation Program for SiC/SiC Composite Accident-Tolerant LWR Fuel Cladding and Core Structures was developed in the FY-14 Advanced Fuels Campaign of the U.S. Department of Energy’s Fuel Cycles Research and Development Program. This document summarizes the status of execution of the technical plan within the activities at the Oak Ridge National Laboratory.

  7. Recombination-induced athermal migration of hydrogen and deuterium in SiC

    SciTech Connect (OSTI)

    Koshka, Yaroslav; Krishnan, Bharat

    2005-02-01

    The phenomenon of recombination-induced formation of hydrogen-defect complexes in epitaxial silicon carbide (SiC) was further investigated on p-type samples treated in deuterium plasma. Qualitatively similar effects were observed for hydrogen and deuterium. The formation of hydrogen-related (deuterium-related) defects would depend on the temperature of the sample during plasma treatment, with lower process temperatures causing only incorporation of hydrogen (deuterium) near the surface without any significant formation of electrically or optically active hydrogen-related or deuterium-related defects in the epilayer. Higher process temperatures normally produced more efficient formation of new centers, including passivation of acceptors in SiC. In all cases, prolonged excitation of the hydrogenated (deuterated) samples with above-bandgap light at reduced temperatures caused recombination-induced formation of a few different defect centers. A confirmation of the long-range athermal migration of hydrogen from the surface into the bulk of the sample was obtained. It has been established that it is the recombination-induced migration of hydrogen that is responsible for the formation of hydrogen-related defect centers under optical excitation.

  8. Method for Analyzing Passive SiC Thermometry with a Continuous Dilatometer to Determine Irradiation Temperature

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Campbell, Anne A; Porter, Wallace D; Katoh, Yutai; Snead, Lance Lewis

    2016-01-01

    Silicon carbide is used as a passive post-irradiation temperature monitor because the irradiation defects will anneal out above the irradiation temperature. The irradiation temperature is determined by measuring a property change after isochronal annealing, i.e., lattice spacing, dimensions, electrical resistivity, thermal diffusivity, or bulk density. However, such methods are time-consuming since the steps involved must be performed in a serial manner. This work presents the use of thermal expansion from continuous dilatometry to calculate the SiC irradiation temperature, which is an automated process requiring minimal setup time. Analysis software was written that performs the calculations to obtain the irradiation temperaturemoreand removes possible user-introduced error while standardizing the analysis. This method has been compared to an electrical resistivity and isochronal annealing investigation, and the results revealed agreement of the calculated temperatures. These results show that dilatometry is a reliable and less time-intensive process for determining irradiation temperature from passive SiC thermometry.less

  9. Table A14. Total First Use (formerly Primary Consumption) of Energy for All P

    U.S. Energy Information Administration (EIA) Indexed Site

    4. Total First Use (formerly Primary Consumption) of Energy for All Purposes" " by Value of Shipment Categories, Industry Group, and Selected Industries, 1994" " (Estimates in Trillion Btu)" ,,,," Value of Shipments and Receipts(b)" ,,,," "," (million dollars)" ,,,,,,,,,"RSE" "SIC"," "," "," "," "," "," "," ",500,"Row"," ","

  10. Table A15. Total Inputs of Energy for Heat, Power, and Electricity Generation

    U.S. Energy Information Administration (EIA) Indexed Site

    Total Inputs of Energy for Heat, Power, and Electricity Generation" " by Value of Shipment Categories, Industry Group, and Selected Industries, 1994" " (Estimates in Trillion Btu)" ,,,," Value of Shipments and Receipts(b)" ,,,," "," (million dollars)" ,,,,,,,,,"RSE" "SIC"," "," "," "," "," "," "," ",500,"Row" "Code(a)","Industry

  11. The HFIR 14J irradiation SiC/SiC composite and SiC fiber collaboration

    SciTech Connect (OSTI)

    Youngblood, G.E.; Jones, R.H.; Kohyama, Akira; Katoh, Yutai; Hasegawa, Akira; Snead, L.; Scholz, R.

    1998-09-01

    A short introduction with references establishes the current status of research and development of SiC{sub f}/SiC composites for fusion energy systems with respect to several key issues. The SiC fiber and composite specimen types selected for the JUPITER 14J irradiation experiment are presented together with the rationale for their selection.

  12. Associations of Pd, U and Ag in the SiC layer of neutron-irradiated TRISO fuel

    SciTech Connect (OSTI)

    Lillo, Thomas; Rooyen, Isabella Van

    2015-05-01

    Knowledge of the associations and composition of fission products in the neutron irradiated SiC layer of high-temperature gas reactor TRISO fuel is important to the understanding of various aspects of fuel performance that presently are not well understood. Recently, advanced characterization techniques have been used to examine fuel particles from the Idaho National Laboratorys AGR-1 experiment. Nano-sized Ag and Pd precipitates were previously identified in grain boundaries and triple points in the SiC layer of irradiated TRISO nuclear fuel. Continuation of this initial research is reported in this paper and consists of the characterization of a relatively large number of nano-sized precipitates in three areas of the SiC layer of a single irradiated TRISO nuclear fuel particle using standardless EDS analysis on focused ion beam-prepared transmission electron microscopy samples. Composition and distribution analyses of these precipitates, which were located on grain boundaries, triple junctions and intragranular precipitates, revealed low levels, generally <10 atomic %, of palladium, silver and/or uranium with palladium being the most common element found. Palladium by itself, or associated with either silver or uranium, was found throughout the SiC layer. A small number of precipitates on grain boundaries and triple junctions were found to contain only silver or silver in association with palladium while uranium was always associated with palladium but never found by itself or in association with silver. Intergranular precipitates containing uranium were found to have migrated ~23 ?m along a radial direction through the 35 ?m thick SiC coating during the AGR-1 experiment while silver-containing intergranular precipitates were found at depths up to ~24 ?m in the SiC layer. Also, Pd-rich, nano-precipitates (~10 nm in diameter), without evidence for the presence of either Ag or U, were revealed in intragranular regions throughout the SiC layer. Because not all

  13. SULFUR ISOTOPIC COMPOSITIONS OF SUBMICROMETER SiC GRAINS FROM THE MURCHISON METEORITE

    SciTech Connect (OSTI)

    Xu, Yuchen; Zinner, Ernst; Gallino, Roberto; Heger, Alexander; Pignatari, Marco; Lin, Yangting

    2015-02-01

    We report C, Si, N, S, Mg-Al, and Ca-Ti isotopic compositions of presolar silicon carbide (SiC) grains from the SiC-rich KJE size fraction (0.5-0.8 μm) of the Murchison meteorite. One thousand one hundred thirteen SiC grains were identified based on their C and Si isotopic ratios. Mainstream, AB, C, X, Y, and Z subtypes of SiC, and X-type silicon nitride (Si{sub 3}N{sub 4}) account for 81.4%, 5.7%, 0.1%, 1.5%, 5.8%, 4.9%, and 0.4%, respectively. Twenty-five grains with unusual Si isotopic ratios, including one C grain, 16 X grains, 1 Y grain, 5 Z grains, and 2 X-type Si{sub 3}N{sub 4} grains were selected for N, S, Mg-Al, and Ca-Ti isotopic analysis. The C grain is highly enriched in {sup 29}Si and {sup 30}Si (δ{sup 29}Si = 1345‰ ± 19‰, δ{sup 30}Si = 1272‰ ± 19‰). It has a huge {sup 32}S excess, larger than any seen before, and larger than that predicted for the Si/S supernova (SN) zone, providing evidence against the elemental fractionation model by Hoppe et al. Two SN models investigated here present a more satisfying explanation in terms of a radiogenic origin of {sup 32}S from the decay of short-lived {sup 32}Si (τ{sub 1/2} = 153 yr). Silicon-32 as well as {sup 29}Si and {sup 30}Si can be produced in SNe by short neutron bursts; evidence for initial {sup 44}Ti (τ{sub 1/2} = 60 yr) in the C grain is additional evidence for an SN origin. The X grains have marginal {sup 32}S excesses, much smaller than expected from their large {sup 28}Si excesses. Similarly, the Y and Z grains do not show the S-isotopic anomalies expected from their large Si isotopic anomalies. Low intrinsic S contents and contamination with isotopically normal S are the most likely explanations.

  14. Effects of aluminum on epitaxial graphene grown on C-face SiC

    SciTech Connect (OSTI)

    Xia, Chao Johansson, Leif I.; Hultman, Lars; Virojanadara, Chariya; Niu, Yuran

    2015-05-21

    The effects of Al layers deposited on graphene grown on C-face SiC substrates are investigated before and after subsequent annealing using low energy electron diffraction (LEED), photoelectron spectroscopy, and angle resolved photoemission. As-deposited layers appear inert. Annealing at a temperature of about 400?C initiates migration of Al through the graphene into the graphene/SiC interface. Further annealing at temperatures from 500?C to 700?C induces formation of an ordered compound, producing a two domain ?7??7R19 LEED pattern and significant changes in the core level spectra that suggest formation of an Al-Si-C compound. Decomposition of this compound starts after annealing at 800?C, and at 1000?C, Al is no longer possible to detect at the surface. On Si-face graphene, deposited Al layers did not form such an Al-Si-C compound, and Al was still detectable after annealing above 1000?C.

  15. Sandia Energy - PV Value

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    PV Value Home Stationary Power Energy Conversion Efficiency Solar Energy Photovoltaics Solar Market Transformation PV Value PV ValueTara Camacho-Lopez2015-06-12T20:36:38+00:0...

  16. Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

    SciTech Connect (OSTI)

    Liu, Gang; Xu, Can; Feldman, Leonard C.; Yakshinskiy, Boris; Wielunski, Leszek; Gustafsson, Torgny; Bloch, Joseph; Dhar, Sarit

    2014-11-10

    We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D{sub 2}O) on the n-type 4H-SiC carbon face (0001{sup }) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D{sub 2}O exposure is proportional to the total D amount at the interface.

  17. Ag Out-surface Diffusion In Crystalline SiC With An Effective SiO2 Diffusion Barrier

    SciTech Connect (OSTI)

    Xue, H.; Xiao, Haiyan Y.; Zhu, Zihua; Shutthanandan, V.; Snead, Lance L.; Boatner, Lynn A.; Weber, William J.; Zhang, Y.

    2015-09-01

    For applications of tristructural isotropic (TRISO) fuel particles in high temperature reactors, release of radioactive Ag isotope (110mAg) through the SiC coating layer is a safety concern. To understand the diffusion mechanism, Ag ion implantations near the surface and in the bulk were performed by utilizing different ion energies and energy-degrader foils. High temperature annealing was carried out on the as-irradiated samples to study the possible out-surface diffusion. Before and after annealing, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) measurements were employed to obtain the elemental profiles of the implanted samples. The results suggest little migration of buried Ag in the bulk, and an out-diffusion of the implanted Ag in the near-surface region of single crystal SiC. It is also found that a SiO2 layer, which was formed during annealing, may serve as an effective barrier to reduce or prevent Ag out diffusion through the SiC coating layer.

  18. Dose dependence of helium bubble formation in nano-engineered SiC at 700 °C

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chen, Chien -Hung; Zhang, Yanwen; Wang, Yongqiang; Crespillo, Miguel L.; Fontana, Cristiano L.; Graham, Joseph T.; Duscher, Gerd; Shannon, Steven C.; Weber, William J.

    2016-02-03

    Knowledge of radiation-induced helium bubble nucleation and growth in SiC is essential for applications in fusion and fission environments. Here we report the evolution of microstructure in nano-engineered (NE) 3C SiC, pre-implanted with helium, under heavy ion irradiation at 700 °C up to doses of 30 displacements per atom (dpa). Elastic recoil detection analysis confirms that the as-implanted helium depth profile does not change under irradiation to 30 dpa at 700 °C. While the helium bubble size distribution becomes narrower with increasing dose, the average size of bubbles remains unchanged and the density of bubbles increases somewhat with dose. Thesemore » results are consistent with a long helium bubble incubation process under continued irradiation at 700 °C up to 30 dpa, similar to that reported under dual and triple beam irradiation at much higher temperatures. The formation of bubbles at this low temperature is enhanced by the nano-layered stacking fault structure in the NE SiC, which enhances point defect mobility parallel to the stacking faults. Here, this stacking fault structure is stable at 700 °C up to 30 dpa and suppresses the formation of dislocation loops normally observed under these irradiation conditions.« less

  19. SICS. A Sensor-Based In-Line Control System for the Surfaces of Continuously Cast Slabs

    SciTech Connect (OSTI)

    Chang, Tzyy-Shuh

    2013-09-23

    The Phase II project has been carried out in accordance to the proposed tasks and budget, based on the original and extended schedule. The R&D team designed and implemented the test unit for the full width coverage, installed the unit in a caster. The development work further included enhanced image processing, in-depth defect study and process control models. The function, operation, and maintenance of the SICS was thoroughly studied during the Phase II research. The experience indicates additional hardware and procedures are required to make the SICS a commercially ready product in operation and maintenance aspect. Such developments have been finished and the team is contacting potential customers for the first commercial installation of SICS. Additionally, OGT is exploring the possibility to team up with a US company that specializes in surface cleaning for slabs/blooms/billets such that the in-line surface inspection can be integrated with in-line surface clean up for the maximum benefit to the steel industry.

  20. Hydrogen intercalation of single and multiple layer graphene synthesized on Si-terminated SiC(0001) surface

    SciTech Connect (OSTI)

    So?tys, Jakub; Piechota, Jacek; Ptasinska, Maria; Krukowski, Stanis?aw

    2014-08-28

    Ab initio density functional theory simulations were used to investigate the influence of hydrogen intercalation on the electronic properties of single and multiple graphene layers deposited on the SiC(0001) surface (Si-face). It is shown that single carbon layer, known as a buffer layer, covalently bound to the SiC substrate, is liberated after hydrogen intercalation, showing characteristic Dirac cones in the band structure. This is in agreement with the results of angle resolved photoelectron spectroscopy measurements of hydrogen intercalation of SiC-graphene samples. In contrast to that hydrogen intercalation has limited impact on the multiple sheet graphene, deposited on Si-terminated SiC surface. The covalently bound buffer layer is liberated attaining its graphene like structure and dispersion relation typical for multilayer graphene. Nevertheless, before and after intercalation, the four layer graphene preserved the following dispersion relations in the vicinity of K point: linear for (AAAA) stacking, direct parabolic for Bernal (ABAB) stacking and wizard hat parabolic for rhombohedral (ABCA) stacking.

  1. Application of organosilicon pre-sic polymer technology to optimize rapid prototyping of ceramic components

    SciTech Connect (OSTI)

    Saha, C.K.; Zank, G. [Dow Corning Corporation, Midland, MI (United States); Ghosh, A. [Philips Display Components Co., Ann Arbor, MI (United States)

    1995-12-01

    Developments of applications of advanced ceramics e.g., SiC, Si{sub 3}N{sub 4}, CMCs need to be on a faster track than what the current processing technologies can afford. Rapid reduction in time to market of new and complex products can be achieved by using Rapid Prototyping and Manufacturing Technologies (RP&M) e.g., 3D-printing, selective laser sintering, stereolithography etc. These technologies will help advanced ceramics meet the performance challenges at an affordable price with reliable manufacturing technologies. The key variables of the RP&M technologies for ceramics are the nature of the polymer carrier and/or the binder, and the powder. Selection and/or the production of a proper class of polymer carrier/binder, understanding their impact on the processing of ceramics such as polymer-powder interaction, speed of hardening the green body in a controlled manner, ability to retain shape during forming and consolidation, delivering desirable properties at the end, are crucial to develop the low cost, high quality ceramic products. Organosilicon pre-SiC polymer technology route to advanced ceramics is currently being commercialized by Dow Corning. Methods to use this class of polymer as a processing aid in developing potentially better RP&M technologies to make better ceramics have been proposed in this work.

  2. VALUE STUDY | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    VALUE STUDY More Documents & Publications Contractor Human Resources Management VALUE STUDY Value Study Desk Manual...

  3. PV Value®

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... For appraisers, the inputs specific to PV in the Residential Green and Energy Efficient Addendum can be used as inputs to PV Value. Valuing a PV system is done using an income ...

  4. VALUE STUDY | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    VALUE STUDY VALUE STUDY PDF icon VALUE STUDY More Documents & Publications Contractor Human Resources Management VALUE STUDY Value Study Desk Manual

  5. PV Value®

    Broader source: Energy.gov [DOE]

    PV Value® is a free solar PV Valuation tool that answers the question of "How much is solar PV worth" and is compliant with the Uniform Standards of Professional Appraisal Practice. It is available for and being used by real estate appraisers, realtors, homeowners, commercial building owners, home builders, solar installers, green raters, insurance companies, and mortgage lenders in all 50 states along with D.C. and Puerto Rico. PV Value® allows for the calculation of both the cost and income approach to value and was endorsed by the largest appraiser trade organization, the "Appraisal Institute," as an innovative approach to valuing solar assets.

  6. Hanford Advisory Board Values

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of work are fundamental core values. Workers should receive appropriate training and programs should be in place to ensure a safety-conscious work environment, without...

  7. Investigation of the Distribution of Fission Products Silver, Palladium and Cadmium in Neutron Irradiated SIC using a Cs Corrected HRTEM

    SciTech Connect (OSTI)

    I. J. van Rooyen; E. Olivier; J. H Neethlin

    2014-10-01

    Electron microscopy examinations of selected coated particles from the first advanced gas reactor experiment (AGR-1) at Idaho National Laboratory (INL) provided important information on fission product distribution and chemical composition. Furthermore, recent research using STEM analysis led to the discovery of Ag at SiC grain boundaries and triple junctions. As these Ag precipitates were nano-sized, high resolution transmission electron microscopy (HRTEM) examination was used to provide more information at the atomic level. This paper describes some of the first HRTEM results obtained by examining a particle from Compact 4-1-1, which was irradiated to an average burnup of 19.26% fissions per initial metal atom (FIMA), a time average, volume-averaged temperature of 1072°C; a time average, peak temperature of 1182°C and an average fast fluence of 4.13 x 1021 n/cm2. Based on gamma analysis, it is estimated that this particle may have released as much as 10% of its available Ag-110m inventory during irradiation. The HRTEM investigation focused on Ag, Pd, Cd and U due to the interest in Ag transport mechanisms and possible correlation with Pd, Ag and U previously found. Additionally, Compact 4-1-1 contains fuel particles fabricated with a different fuel carrier gas composition and lower deposition temperatures for the SiC layer relative to the Baseline fabrication conditions, which are expected to reduce the concentration of SiC defects resulting from uranium dispersion. Pd, Ag, and Cd were found to co-exist in some of the SiC grain boundaries and triple junctions whilst U was found to be present in the micron-sized precipitates as well as separately in selected areas at grain boundaries. This study confirmed the presence of Pd both at inter- and intragranular positions; in the latter case specifically at stacking faults. Small Pd nodules were observed at a distance of about 6.5 micron from the inner PyC/SiC interface.

  8. Structural Study of SiC Nanoparticles Grown by Inductively Coupled Plasma and Laser Pyrolysis for Nano-structured Ceramics Elaboration

    SciTech Connect (OSTI)

    Leconte, Yann; Portier, Xavier; Herlin-Boime, Nathalie; Reynaud, Cecile

    2008-07-01

    Refractory carbide nano-structured ceramics as SiC constitute interesting materials for high temperature applications and particularly for fourth generation nuclear plants. To elaborate such nano-materials, weighable amounts of SiC nano-powders have to be synthesized first with an accurate control of the grain size and stoichiometry. The inductively coupled plasma and the laser pyrolysis techniques, respectively developed at EMPA Thun and CEA Saclay, allow meeting these requirements. Both techniques are able to produce dozens of grams per hour of silicon carbide nano-powders. The particle size can be adjusted down to around 20 nm for the plasma synthesis and even down to 5-10 nm for the laser pyrolysis. The stoichiometry Si/C can be tuned by the addition of methane into the plasma and acetylene for the laser process. (authors)

  9. High coking value pitch

    SciTech Connect (OSTI)

    Miller, Douglas J.; Chang, Ching-Feng; Lewis, Irwin C.; Lewis, Richard T.

    2014-06-10

    A high coking value pitch prepared from coal tar distillate and has a low softening point and a high carbon value while containing substantially no quinoline insolubles is disclosed. The pitch can be used as an impregnant or binder for producing carbon and graphite articles.

  10. A 10-kW SiC Inverter with A Novel Printed Metal Power Module With Integrated Cooling Using Additive Manufacturing

    SciTech Connect (OSTI)

    Chinthavali, Madhu Sudhan; Ayers, Curtis William; Campbell, Steven L; Wiles, Randy H; Ozpineci, Burak

    2014-01-01

    With efforts to reduce the cost, size, and thermal management systems for the power electronics drivetrain in hybrid electric vehicles (HEVs) and plug-in hybrid electric vehicles (PHEVs), wide band gap semiconductors including silicon carbide (SiC) have been identified as possibly being a partial solution. This paper focuses on the development of a 10-kW all SiC inverter using a high power density, integrated printed metal power module with integrated cooling using additive manufacturing techniques. This is the first ever heat sink printed for a power electronics application. About 50% of the inverter was built using additive manufacturing techniques.

  11. VALUE ENGINEERING.PDF

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6 I N S P E C T I O N R E P O R T U.S. DEPARTMENT OF ENERGY OFFICE OF INSPECTOR GENERAL OFFICE OF INSPECTIONS FOLLOW-ON INSPECTION OF THE DEPARTMENT OF ENERGY'S VALUE ENGINEERING PROGRAM DECEMBER 2001 U.S. DEPARTMENT OF ENERGY Washington, DC 20585 December 20, 2001 MEMORANDUM FOR THE SECRETARY FROM: Gregory H. Friedman /s/ Inspector General SUBJECT: INFORMATION: Report on "Follow-on Inspection of the Department of Energy's Value Engineering Program" BACKGROUND Value Engineering is a

  12. DEVELOPMENT OF SiC DEVICES FOR DIAGNOSTICS AND CONTROL OF COMBUSTION PRODUCTS IN ENERGY PLANT ENVIRONMENTS

    SciTech Connect (OSTI)

    Ruby N. Ghosh; Peter Tobias

    2003-12-01

    A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the detection of combustion products in power plant environments. The sensor is a catalytic gate field effect device that can detect hydrogen containing species in chemically reactive, high temperature environments. The response of these metal/insulator/SiC (MISiC) devices to reducing gases has been assumed to be due to the reduction in the metal work function at the metal/oxide interface that shifts the capacitance to lower voltages. From in-situ capacitance-voltage measurements taken under sensor operating conditions we have discovered that two independent mechanisms are responsible for the sensor response to hydrogen and oxygen. We present a model of the device response based on the chemically induced shift of the metal/semiconductor barrier height as well as the passivation and creation of charged states at the SiO{sub 2}/SiC interface. The latter mechanism is much slower than the barrier height shift. Preliminary photoemission experiments have been performed to independently monitor the contribution of the two phenomena. We discuss in detail the effect of these results on sensor design and the choice of operating point for high temperature operation.

  13. Value of Information References

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Morency, Christina

    This file contains a list of relevant references on value of information (VOI) in RIS format. VOI provides a quantitative analysis to evaluate the outcome of the combined technologies (seismology, hydrology, geodesy) used to monitor Brady's Geothermal Field.

  14. Earned Value Management

    Broader source: Energy.gov [DOE]

    Earned Value Management (EVM) is a systematic approach to the integration and measurement of cost, schedule, and technical (scope) accomplishments on a project or task. It provides both the...

  15. Photovoltaics Value Analysis

    SciTech Connect (OSTI)

    Contreras, J.L.; Frantzis, L.; Blazewicz, S.; Pinault, D.; Sawyer, H.

    2008-02-01

    The goals of this report are to identify best practices in methodologies for estimating the value of distributed PV technologies, identify gaps in existing knowledge, and outline R&D opportunities.

  16. Value of Information References

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Morency, Christina

    2014-12-12

    This file contains a list of relevant references on value of information (VOI) in RIS format. VOI provides a quantitative analysis to evaluate the outcome of the combined technologies (seismology, hydrology, geodesy) used to monitor Brady's Geothermal Field.

  17. HSEP Value Statement

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    7/9/2012 HSEP Value Statement Safe and environmentally conscious performance of work is our fundamental core value. Integrated Safety Management should be used as the principal vehicle to protect the worker and the environment, and to guide work planning of all types. This includes practicing the proper principles of behavior conducive to a positive safety culture and incorporating safety and environmental risk identification and mitigation in facility designs. Workers should receive appropriate

  18. Value of Information spreadsheet

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Trainor-Guitton, Whitney

    2014-05-12

    This spreadsheet represents the information posteriors derived from synthetic data of magnetotellurics (MT). These were used to calculate value of information of MT for geothermal exploration. Information posteriors describe how well MT was able to locate the "throat" of clay caps, which are indicative of hidden geothermal resources. This data is full explained in the peer-reviewed publication: Trainor-Guitton, W., Hoversten, G. M., Ramirez, A., Roberts, J., Jlusson, E., Key, K., Mellors, R. (Sept-Oct. 2014) The value of spatial information for determining well placement: a geothermal example, Geophysics.

  19. Value of Information spreadsheet

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Trainor-Guitton, Whitney

    2014-05-12

    This spreadsheet represents the information posteriors derived from synthetic data of magnetotellurics (MT). These were used to calculate value of information of MT for geothermal exploration. Information posteriors describe how well MT was able to locate the "throat" of clay caps, which are indicative of hidden geothermal resources. This data is full explained in the peer-reviewed publication: Trainor-Guitton, W., Hoversten, G. M., Ramirez, A., Roberts, J., Júlíusson, E., Key, K., Mellors, R. (Sept-Oct. 2014) The value of spatial information for determining well placement: a geothermal example, Geophysics.

  20. Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

    SciTech Connect (OSTI)

    Yu, Cui; Liu, Qingbin; Li, Jia; Lu, Weili; He, Zezhao; Cai, Shujun; Feng, Zhihong

    2014-11-03

    We investigate the temperature dependent electrical transport properties of quasi-free standing bilayer graphene on 4H-SiC (0001) substrate. Three groups of monolayer epitaxial graphene and corresponding quasi-free standing bilayer graphene with different crystal quality and layer number homogeneity are prepared. Raman spectroscopy and atomic-force microscopy are used to obtain their morphologies and layer number, and verify the complete translation of buffer layer into graphene. The highest room temperature mobility reaches 3700 cm{sup 2}/V·s for the quasi-free standing graphene. The scattering mechanism analysis shows that poor crystal quality and layer number inhomogeneity introduce stronger interacting of SiC substrate to the graphene layer and more impurities, which limit the carrier mobility of the quasi-free standing bilayer graphene samples.

  1. SiC MOSFET Based Single Phase Active Boost Rectifier with Power Factor Correction for Wireless Power Transfer Applications

    SciTech Connect (OSTI)

    Onar, Omer C; Tang, Lixin; Chinthavali, Madhu Sudhan; Campbell, Steven L; Miller , John M.

    2014-01-01

    Wireless Power Transfer (WPT) technology is a novel research area in the charging technology that bridges the utility and the automotive industries. There are various solutions that are currently being evaluated by several research teams to find the most efficient way to manage the power flow from the grid to the vehicle energy storage system. There are different control parameters that can be utilized to compensate for the change in the impedance due to variable parameters such as battery state-of-charge, coupling factor, and coil misalignment. This paper presents the implementation of an active front-end rectifier on the grid side for power factor control and voltage boost capability for load power regulation. The proposed SiC MOSFET based single phase active front end rectifier with PFC resulted in >97% efficiency at 137mm air-gap and >95% efficiency at 160mm air-gap.

  2. Interplay between atomic disorder, lattice swelling and defect energy in ion-irradiation-induced amorphization of SiC

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Debelle, Aurelien; Boulle, Alexandre; Chartier, Alain; Gao, Fei; Weber, William J

    2014-11-25

    We present a combination of experimental and computational evaluations of disorder level and lattice swelling in ion-irradiated materials. Information obtained from X-ray diffraction experiments is compared to X-ray diffraction data generated using atomic-scale simulations. The proposed methodology, which can be applied to a wide range of crystalline materials, is used to study the amorphization process in irradiated SiC. Results show that this process can be divided into two steps. In the first step, point defects and small defect clusters are produced and generate both large lattice swelling and high elastic energy. In the second step, enhanced coalescence of defects andmore » defect clusters occurs to limit this increase in energy, which rapidly leads to complete amorphization.« less

  3. Steam Oxidation of FeCrAl and SiC in the Severe Accident Test Station (SATS)

    SciTech Connect (OSTI)

    Pint, Bruce A.; Unocic, Kinga A.; Terrani, Kurt A.

    2015-08-01

    Numerous research projects are directed towards developing accident tolerant fuel (ATF) concepts that will enhance safety margins in light water reactors (LWR) during severe accident scenarios. In the U.S. program, the high temperature steam oxidation performance of ATF solutions has been evaluated in the Severe Accident Test Station (SATS) at Oak Ridge National Laboratory (ORNL) since 2012 [1-3] and this facility continues to support those efforts in the ATF community. Compared to the current UO2/Zr-based alloy fuel system, alternative cladding materials can offer slower oxidation kinetics and a smaller enthalpy of oxidation that can significantly reduce the rate of heat and hydrogen generation in the core during a coolant-limited severe accident [4-5]. Thus, steam oxidation behavior is a key aspect of the evaluation of ATF concepts. This report summarizes recent work to measure steam oxidation kinetics of FeCrAl and SiC specimens in the SATS.

  4. Second harmonic generation spectroscopy in the Reststrahl band of SiC using an infrared free-electron laser

    SciTech Connect (OSTI)

    Paarmann, Alexander Razdolski, Ilya; Melnikov, Alexey; Gewinner, Sandy; Schöllkopf, Wieland; Wolf, Martin

    2015-08-24

    The Reststrahl spectral region of silicon carbide has recently attracted much attention owing to its potential for mid-infrared nanophotonic applications based on surface phonon polaritons (SPhPs). Studies of optical phonon resonances responsible for surface polariton formation, however, have so far been limited to linear optics. In this Letter, we report the first nonlinear optical investigation of the Reststrahl region of SiC, employing an infrared free-electron laser to perform second harmonic generation (SHG) spectroscopy. We observe two distinct resonance features in the SHG spectra, one attributed to resonant enhancement of the nonlinear susceptibility χ{sup (2)} and the other due to a resonance in the Fresnel transmission. Our work clearly demonstrates high sensitivity of mid-infrared SHG to phonon-driven phenomena and opens a route to studying nonlinear effects in nanophotonic structures based on SPhPs.

  5. Core Values | The Ames Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Core Values What we do and how we do it is determined by our core values. Our core values are how we operate and what we value most. They are the qualities that define our culture...

  6. PV Value | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PV Value PV Value PV Value is a web-based tool that calculates the energy production value for a residential or commercial photovoltaic (PV) system. The tool is Uniform Standards ...

  7. Economic Values | Open Energy Information

    Open Energy Info (EERE)

    Economic Values Jump to: navigation, search Retrieved from "http:en.openei.orgwindex.php?titleEconomicValues&oldid612356...

  8. Social Values | Open Energy Information

    Open Energy Info (EERE)

    Social Values Jump to: navigation, search Retrieved from "http:en.openei.orgwindex.php?titleSocialValues&oldid612345...

  9. The value of volunteering

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    volunteering Community Connections: Your link to news and opportunities from Los Alamos National Laboratory Latest Issue: September 1, 2016 all issues All Issues » submit The value of volunteering Volunteers help fill gaps in staffing at regional nonprofits March 1, 2016 Betty Ehart Senior Center staffer Susie Eash challenges Pat Day on their daily match of "Aggravation." Betty Ehart Senior Center staffer Susie Eash challenges Pat Day on their daily match of Aggravation. Contacts

  10. PV Value®

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Value® - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Energy Defense Waste Management Programs Advanced Nuclear Energy

  11. Vehicle Technologies Office Merit Review 2014: Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives

    Broader source: Energy.gov [DOE]

    Presentation given by APEI Inc. at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about Advanced low-cost SIC and GaN wide...

  12. Vehicle Technologies Office Merit Review 2015: Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives

    Broader source: Energy.gov [DOE]

    Presentation given by APEI Inc. at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about advanced low-cost SiC and GaN wide...

  13. Characteristics RSE Column Factor: All Model Years Model Year

    U.S. Energy Information Administration (EIA) Indexed Site

    ... 19.1 1.4 2.0 2.2 5.0 4.4 2.1 0.6 Q 0.9 14.3 Below Poverty Line 100 Percent ... 12.4 Q Q 0.6 2.1 2.1 2.4 1.7...

  14. Characteristics RSE Column Factor: Households with Children Households...

    U.S. Energy Information Administration (EIA) Indexed Site

    ... 7.6 2.1 3.3 2.2 11.5 Q Q Q 1.4 6.9 2.8 18.8 Below Poverty Line 100 Percent ... 6.6 1.6 3.6 1.3 5.8 0.3 0.7...

  15. The {sup 13}C-pocket structure in AGB models: constraints from zirconium isotope abundances in single mainstream SiC grains

    SciTech Connect (OSTI)

    Liu, Nan; Davis, Andrew M.; Pellin, Michael J.; Gallino, Roberto; Bisterzo, Sara; Savina, Michael R.

    2014-06-20

    We present postprocess asymptotic giant branch (AGB) nucleosynthesis models with different {sup 13}C-pocket internal structures to better explain zirconium isotope measurements in mainstream presolar SiC grains by Nicolussi et al. and Barzyk et al. We show that higher-than-solar {sup 92}Zr/{sup 94}Zr ratios can be predicted by adopting a {sup 13}C-pocket with a flat {sup 13}C profile, instead of the previous decreasing-with-depth {sup 13}C profile. The improved agreement between grain data for zirconium isotopes and AGB models provides additional support for a recent proposal of a flat {sup 13}C profile based on barium isotopes in mainstream SiC grains by Liu et al.

  16. PV Value | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PV Value PV Value PV Value Sandia National Laboratories has developed a prospective model of determining the value of PV. Sandia uses an income capitalization approach, which considers the present value of future energy production to determine the remaining value of a PV system. An online tool developed by Energy Sense Finance, has been released to the public. https://www.pvvalue.com/ PV Value (332.15 KB) More Documents & Publications PV Value® Reduce Risk, Increase Clean Energy: How States

  17. Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Annual Report

    SciTech Connect (OSTI)

    Henager, Charles H.; Alvine, Kyle J.; Roosendaal, Timothy J.; Shin, Yongsoon; Nguyen, Ba Nghiep; Borlaug, Brennan A.; Jiang, Weilin; Arreguin, Shelly A.

    2015-01-15

    A new dual-phase nanocomposite of Ti₃SiC₂/SiC is being synthesized using preceramic polymers, ceramic powders, and carbon nanotubes (CNTs) designed to be suitable for advanced nuclear reactors and perhaps as fuel cladding. The material is being designed to have superior fracture toughness compared to SiC, adequate thermal conductivity, and higher density than SiC/SiC composites. This annual report summarizes the progress towards this goal and reports progress in understanding certain aspects of the material behavior but some shortcomings in achieving full density or in achieving adequate incorporation of CNTs. The measured thermal conductivity is adequate and falls into an expected range based on SiC and Ti₃SiC₂. Part of this study makes an initial assessment for Ti₃SiC₂ as a barrier to fission product transport. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti₃SiC₂, SiC, and a synthesized at PNNL. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti₃SiC₂ occurs during ion implantation at 873 K. Cs in Ti₃SiC₂ is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti₃SiC₂ as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Progress is reported in thermal conductivity modeling of SiC-based materials that is relevant to this research, as is progress in modeling the effects of CNTs on fracture strength of SiC-based materials.

  18. Atom-scale covalent electrochemical modification of single-layer graphene on SiC substrates by diaryliodonium salts

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gearba, Raluca I.; Mueller, Kory M.; Veneman, Peter A.; Holliday, Bradley J.; Chan, Calvin K.; Stevenson, Keith J.

    2015-05-09

    Owing to its high conductivity, graphene holds promise as an electrode for energy devices such as batteries and photovoltaics. However, to this end, the work function and doping levels in graphene need to be precisely tuned. One promising route for modifying graphene’s electronic properties is via controlled covalent electrochemical grafting of molecules. We show that by employing diaryliodonium salts instead of the commonly used diazonium salts, spontaneous functionalization is avoided. This then allows for precise tuning of the grafting density. Moreover, by employing bis(4-nitrophenyl)iodonium(III) tetrafluoroborate (DNP) salt calibration curves, the surface functionalization density (coverage) of glassy carbon was controlled usingmore » cyclic voltammetry in varying salt concentrations. These electro-grafting conditions and calibration curves translated directly over to modifying single layer epitaxial graphene substrates (grown on insulating 6H-SiC (0 0 0 1)). In addition to quantifying the functionalization densities using electrochemical methods, samples with low grafting densities were characterized by low-temperature scanning tunneling microscopy (LT-STM). We show that the use of buffer-layer free graphene substrates is required for clear observation of the nitrophenyl modifications. Furthermore, atomically-resolved STM images of single site modifications were obtained, showing no preferential grafting at defect sites or SiC step edges as supposed previously in the literature. Most of the grafts exhibit threefold symmetry, but occasional extended modifications (larger than 4 nm) were observed as well.« less

  19. Atom-scale covalent electrochemical modification of single-layer graphene on SiC substrates by diaryliodonium salts

    SciTech Connect (OSTI)

    Gearba, Raluca I.; Mueller, Kory M.; Veneman, Peter A.; Holliday, Bradley J.; Chan, Calvin K.; Stevenson, Keith J.

    2015-05-09

    Owing to its high conductivity, graphene holds promise as an electrode for energy devices such as batteries and photovoltaics. However, to this end, the work function and doping levels in graphene need to be precisely tuned. One promising route for modifying graphenes electronic properties is via controlled covalent electrochemical grafting of molecules. We show that by employing diaryliodonium salts instead of the commonly used diazonium salts, spontaneous functionalization is avoided. This then allows for precise tuning of the grafting density. Moreover, by employing bis(4-nitrophenyl)iodonium(III) tetrafluoroborate (DNP) salt calibration curves, the surface functionalization density (coverage) of glassy carbon was controlled using cyclic voltammetry in varying salt concentrations. These electro-grafting conditions and calibration curves translated directly over to modifying single layer epitaxial graphene substrates (grown on insulating 6H-SiC (0 0 0 1)). In addition to quantifying the functionalization densities using electrochemical methods, samples with low grafting densities were characterized by low-temperature scanning tunneling microscopy (LT-STM). We show that the use of buffer-layer free graphene substrates is required for clear observation of the nitrophenyl modifications. Furthermore, atomically-resolved STM images of single site modifications were obtained, showing no preferential grafting at defect sites or SiC step edges as supposed previously in the literature. Most of the grafts exhibit threefold symmetry, but occasional extended modifications (larger than 4 nm) were observed as well.

  20. Prestack mid-value filtering

    SciTech Connect (OSTI)

    Changlian, X. )

    1992-01-01

    This paper describes mid-value filtering, a specific nonlinear smoothing filtering, and widely used in graphic processing, etc. Mid-value filtering before stack of seismic data can remove wild value (inconceivable particular big value) and improve signal-noise ratio. In view of big data volume before stack, computation efficiency of mid-value filtering is critical to its feasibility. The algorithm used here is sufficiently based on the properties of mid-value filtering, so that the computation efficiency is greatly improved. It is experimentally shown that prestack mid-value filtering can quite well eliminate wild value, abnormal traces as well as surface waves, and raise signal-noise ratio. After lateral low frequency noises are removed by high pass filtering, mid-value filtering works better.

  1. Ceramic Technology Project database: September 1990 summary report. [SiC, SiN, whisker-reinforced SiN, ZrO-toughened aluminas, zirconias, joints

    SciTech Connect (OSTI)

    Keyes, B.L.P.

    1992-06-01

    Data generated within the Ceramic Technology Project (CTP) represent a valuable resource for both research and industry. The CTP database was created to provide easy access to this information in electronic and hardcopy forms by using a computerized database and by issuing periodic hardcopy reports on the database contents. This report is the sixth in a series of semiannual database summaries and covers recent additions to the database, including joined brazed specimen test data. It covers 1 SiC, 34 SiN, 10 whisker-reinforced SiN, 2 zirconia-toughened aluminas, 8 zirconias, and 34 joints.

  2. Quantum physics and human values

    SciTech Connect (OSTI)

    Stapp, H.P.

    1989-09-01

    This report discusses the following concepts: the quantum conception of nature; the quantum conception of man; and the impact upon human values. (LSP).

  3. Earned Value Management System (EVMS)

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2012-03-13

    This Guide provides approaches for implementing the Earned Value Management System (EVMS) requirements of DOE O 413.3B. Supersedes DOE G 413.3-10.

  4. SEPARATION OF SCANDIUM VALUES FORM IRON VALUES BY SOLVENT EXTRACTION

    DOE Patents [OSTI]

    Kuhlman, C.W. Jr.; Lang, G.P.

    1961-12-19

    A process is given for separating scandium from trivalent iron values. In this process, an aqueous nitric acid solution is contacted with a water- immiscible alkyl phosphate solution, the aqueous solution containing the values to be separated, whereby the scandium is taken up by the alkyl phosphate. The aqueous so1ution is preferably saturated with magnesium nitrate to retain the iron in the aqueous solution. (AEC)

  5. Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

    SciTech Connect (OSTI)

    Michon, A.; Vezian, S.; Roudon, E.; Lefebvre, D.; Portail, M.; Zielinski, M.; Chassagne, T.

    2013-05-28

    Graphene growth from a propane flow in a hydrogen environment (propane-hydrogen chemical vapor deposition (CVD)) on SiC differentiates from other growth methods in that it offers the possibility to obtain various graphene structures on the Si-face depending on growth conditions. The different structures include the (6{radical}3 Multiplication-Sign 6{radical}3)-R30 Degree-Sign reconstruction of the graphene/SiC interface, which is commonly observed on the Si-face, but also the rotational disorder which is generally observed on the C-face. In this work, growth mechanisms leading to the formation of the different structures are studied and discussed. For that purpose, we have grown graphene on SiC(0001) (Si-face) using propane-hydrogen CVD at various pressure and temperature and studied these samples extensively by means of low energy electron diffraction and atomic force microscopy. Pressure and temperature conditions leading to the formation of the different structures are identified and plotted in a pressure-temperature diagram. This diagram, together with other characterizations (X-ray photoemission and scanning tunneling microscopy), is the basis of further discussions on the carbon supply mechanisms and on the kinetics effects. The entire work underlines the important role of hydrogen during growth and its effects on the final graphene structure.

  6. Earned Value Management System (EVMS)

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2012-03-13

    To support DOE's initiatives to improve program, project, and contract management through the implementation and surveillance of a contractor's Earned Value Management System (EVMS) that is in conformance with DOE O 413.3B, Program and Project Management for the Acquisition of Capital Assets, the American National Standards Institute/Electronic Industries Alliance (ANSI/EIA)-748-B, Earned Value Management System (or as required by contract), and Federal Acquisition Regulation (FAR) 52.234-4, Earned Value Management System (EVMS). Admin Chg 1 dated 10-22-2015.

  7. CMI Values | Critical Materials Institute

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Values CMI Values -- we listen, we are safe, we collaborate, we respect, we move fast, we are agile, we are responsible, and we deliver. We Listen: We are driven by the needs of technology and our best information comes from our industry partners. We Are Safe: We conduct all of our work in a manner that protects our workers, the public and the environment. We Collaborate: We bring together the best available expertise to solve the problems at hand. We Respect: We treat each other well and value

  8. Earned Value Management System (EVMS)

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2008-05-06

    The Guide supports the Departments initiatives to improve program, project, and contract management through the implementation and surveillance of contractors earned value management systems. Canceled by DOE G 413.3-10A.

  9. Core Values | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Core Values Core Values People - People are our most important resource. We respect and use our experience and skills and appreciate our diversity. Business Excellence - We are fiscally responsible and actively pursue best business practices. Safety - We protect our human and material resources and promote safe work practices within the office and at our sites. Communication - We take full advantage of our virtual organization's strengths and share information freely across all levels of the

  10. Report on the deuterium retention in CVD coated W on SiC in support of the Ultramet Companys Small Business Innovation Research (SBIR) project: SOW DE-FG02-07ER84941

    SciTech Connect (OSTI)

    Masashi Shimada

    2012-06-01

    A tungsten (W) coated (0.0005-inch thickness) silicon carbide (SiC) (1.0-inch diameter and 0.19-inch thickness) sample was exposed to a divertor relevant high-flux (~1022 m-2s-1) deuterium plasma at 200 and 400C in the Idaho National Laboratorys (INLs) Tritium Plasma Experiment (TPE), and the total deuterium retention was subsequently measured via the thermal desorption spectroscopy (TDS) method. The deuterium retentions were 6.4x1019 m-2 and 1.7x1020 m-2, for 200 and 400C exposure, respectively. The Tritium Migration Analysis Program (TMAP) was used to analyze the measured TDS spectrum to investigate the deuterium behavior in the W coated SiC, and the results indicated that most of the deuterium was trapped in the W coated layer even at 400C. This thin W layer (0.0005-inch ~ 13m thickness) prevented deuterium ions from bombarding directly into the SiC substrate, minimizing erosion of SiC and damage creation via ion bombardment. The shift in the D desorption peak in the TDS spectra from 200 C to 400C can be attributed to D migration to the bulk material. This unexpectedly low deuterium retention and short migration might be due to the porous nature of the tungsten coating, which can decrease the solution concentration of deuterium atoms.

  11. Photovoltaics Value Clearinghouse | Open Energy Information

    Open Energy Info (EERE)

    Photovoltaics Value Clearinghouse Jump to: navigation, search The Photovoltaics Value Clearinghouse was developed by NREL and Clean Power Research.1 The PV Value Clearinghouse is...

  12. Process for recovering actinide values

    DOE Patents [OSTI]

    Horwitz, E. Philip; Mason, George W.

    1980-01-01

    A process for rendering actinide values recoverable from sodium carbonate scrub waste solutions containing these and other values along with organic compounds resulting from the radiolytic and hydrolytic degradation of neutral organophosphorous extractants such as tri-n butyl phosphate (TBP) and dihexyl-N,N-diethyl carbamylmethylene phosphonate (DHDECAMP) which have been used in the reprocessing of irradiated nuclear reactor fuels. The scrub waste solution is preferably made acidic with mineral acid, to form a feed solution which is then contacted with a water-immiscible, highly polar organic extractant which selectively extracts the degradation products from the feed solution. The feed solution can then be processed to recover the actinides for storage or recycled back into the high-level waste process stream. The extractant is recycled after stripping the degradation products with a neutral sodium carbonate solution.

  13. Core Values Postcard | The Ames Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Core Values Postcard Document Number: NA Effective Date: 092014 File (public): PDF icon PrintCoreValuesPostcard...

  14. The value of energy data

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    The value of energy data DOE SSL Program Connected Lighting Meeting November 16, 2015 2 Lighting control past * Focus on devices (widgets) and technologies * Complex configuration requirements * High total cost of deployment * Poor user satisfaction * Limited performance monitoring and continuous optimization * Frequent misalignment with owner/occupant organizational maturity * Limited interaction with non-lighting systems * Difficult to predict performance and energy savings * Low adoption

  15. ADSORPTION METHOD FOR SEPARATING THORIUM VALUES FROM URANIUM VALUES

    DOE Patents [OSTI]

    Boyd, G.E.; Russell, E.R.; Schubert, J.

    1959-08-01

    An improved ion exchange method is described for recovery of uranium and thorium values as separate functions from an aqueous acidic solution containing less than 10/sup -3/ M thorium ions and between 0.1 and 1 M uranyl ions. The solution is passed through a bed of cation exchange resin in the acid form to adsorb all the thorium ions and a portion of the uranyl ions. The uranium is eluted by means of aqueous 0.1 to 0.4 M sulfuric acid. The thorium may then be stripped from the resin by elution with aqueous 0.5 M oxalic acid.

  16. Value Study Desk Manual | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Value Study Desk Manual Value Study Desk Manual Updated September 26, 2012. Memo from Robert Myers regarding DOE Benefit Value Desk Manual (56.76 KB) Value Study Desk Manual (1005.83 KB) More Documents & Publications Contractor Human Resources Management VALUE STUDY VALUE STUDY

  17. Shale Oil Value Enhancement Research

    SciTech Connect (OSTI)

    James W. Bunger

    2006-11-30

    Raw kerogen oil is rich in heteroatom-containing compounds. Heteroatoms, N, S & O, are undesirable as components of a refinery feedstock, but are the basis for product value in agrochemicals, pharmaceuticals, surfactants, solvents, polymers, and a host of industrial materials. An economically viable, technologically feasible process scheme was developed in this research that promises to enhance the economics of oil shale development, both in the US and elsewhere in the world, in particular Estonia. Products will compete in existing markets for products now manufactured by costly synthesis routes. A premium petroleum refinery feedstock is also produced. The technology is now ready for pilot plant engineering studies and is likely to play an important role in developing a US oil shale industry.

  18. Chapter 48 - Value Engineering | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    8 - Value Engineering Chapter 48 - Value Engineering PDF icon 48ValueEngineering0.pdf More Documents & Publications Audit Report: OAS-L-07-08 Emerging Lighting Technology...

  19. Table A56. Number of Establishments by Total Inputs of Energy for Heat, Powe

    U.S. Energy Information Administration (EIA) Indexed Site

    Number of Establishments by Total Inputs of Energy for Heat, Power, and Electricity Generation," " by Industry Group, Selected Industries, and" " Presence of Industry-Specific Technologies for Selected Industries, 1994: Part 2" ,,,"RSE" "SIC",,,"Row" "Code(a)","Industry Group and Industry","Total(b)","Factors" ,"RSE Column Factors:",1 20,"FOOD and KINDRED PRODUCTS"

  20. SiO{sub 2}/SiC structures annealed in D{sub 2}{sup 18}O: Compositional and electrical effects

    SciTech Connect (OSTI)

    Pitthan, E. Corra, S. A.; Soares, G. V.; Boudinov, H. I.; Stedile, F. C.

    2014-03-17

    Effects of water vapor annealing on SiO{sub 2}/4H-SiC structures formed following different routes were investigated using water isotopically enriched in {sup 18}O and {sup 2}H (D). Isotopic exchange between oxygen from the water vapor and oxygen from SiO{sub 2} films deposited on 4H-SiC was observed in the whole depth of the films, differently from the behavior of SiO{sub 2} films thermally grown on 4H-SiC. The highest amount of D was obtained in the sample with the highest negative fixed charge concentration, suggesting that the D incorporation occurs in defects in the structure that exist prior to the annealing. As a consequence of the water annealing, a significant reduction in the negative effective charge in metal-oxide-semiconductor capacitors and the removal of the SiO{sub 2}/SiC interfacial region was observed, attributed to the reduction of the amount of SiO{sub x}C{sub y} compounds in the interfacial region.

  1. Earned Value Management | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Management Earned Value Management Earned Value Management The mission of the DOE Earned Value Management website is to educate and train on theory and practice of Earned Value Management, and use it as an integrated Project Management process. Earned Value Management (EVM) is a systematic approach to the integration and measurement of cost, schedule, and technical (scope) accomplishments on a project or task. It provides both the government and contractors the ability to examine detailed

  2. Doppler Lidar Wind Value-Added Product

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    8 Doppler Lidar Wind Value-Added Product RK Newsom C Sivaraman TR Shippert LD Riihimaki ... DOESC-ARMTR-148 Doppler Lidar Wind Value-Added Product Version 1.0 RK Newsom C Sivaraman ...

  3. core values | National Nuclear Security Administration

    National Nuclear Security Administration (NNSA)

    core values Livermore Field Office sets core values as part of continuous improvement process At their recent off-site continuous improvement session, the NNSA Livermore Field Office (LFO) in California unveiled their new set of core values: Integrity - Trustworthy, Reliable, Ethical We are responsible stewards of federal resources Collaboration - Communicate, Support, Team-Focused

  4. Value of Information Evaluation using Field Data

    SciTech Connect (OSTI)

    Trainor-Guitton, W.

    2015-06-15

    Value of information (VOI) provides the ability to identify and prioritize useful information gathering for a geothermal prospect, either hydrothermal or for enhanced geothermal systems. Useful information provides a value greater than the cost of the information; wasteful information costs more than the expected value of the information. In this project we applied and refined VOI methodologies on selected geothermal prospects.

  5. Transparent conducting Si-codoped Al-doped ZnO thin films prepared by magnetron sputtering using Al-doped ZnO powder targets containing SiC

    SciTech Connect (OSTI)

    Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu

    2009-07-15

    Transparent conducting Al-doped ZnO (AZO) thin films codoped with Si, or Si-codoped AZO (AZO:Si), were prepared by radio-frequency magnetron sputtering using a powder mixture of ZnO, Al{sub 2}O{sub 3}, and SiC as the target; the Si content (Si/[Si+Zn] atomic ratio) was varied from 0 to 1 at. %, but the Al content (Al/[Al+Zn] atomic ratio) was held constant. To investigate the effect of carbon on the electrical properties of AZO:Si thin films prepared using the powder targets containing SiC, the authors also prepared thin films using a mixture of ZnO, Al{sub 2}O{sub 3}, and SiO{sub 2} or SiO powders as the target. They found that when AZO:Si thin films were deposited on glass substrates at about 200 degree sign C, both Al and Si doped into ZnO acted as effective donors and the atomic carbon originating from the sputtered target acted as a reducing agent. As a result, sufficient improvement was obtained in the spatial distribution of resistivity on the substrate surface in AZO:Si thin films prepared with a Si content (Si/[Si+Zn] atomic ratio) of 0.75 at. % using powder targets containing SiC. The improvement in resistivity distribution was mainly attributed to increases in both carrier concentration and Hall mobility at locations on the substrate corresponding to the target erosion region. In addition, the resistivity stability of AZO: Si thin films exposed to air for 30 min at a high temperature was found to improve with increasing Si content.

  6. ZERH Architect Training: Understanding the Value, Technology...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Architect Training: Understanding the Value, Technology and Benefits of the Zero Energy ... Consumer demand for market options that offer improved comfort, health, safety, resale ...

  7. Capacity Value of Concentrating Solar Power Plants

    SciTech Connect (OSTI)

    Madaeni, S. H.; Sioshansi, R.; Denholm, P.

    2011-06-01

    This study estimates the capacity value of a concentrating solar power (CSP) plant at a variety of locations within the western United States. This is done by optimizing the operation of the CSP plant and by using the effective load carrying capability (ELCC) metric, which is a standard reliability-based capacity value estimation technique. Although the ELCC metric is the most accurate estimation technique, we show that a simpler capacity-factor-based approximation method can closely estimate the ELCC value. Without storage, the capacity value of CSP plants varies widely depending on the year and solar multiple. The average capacity value of plants evaluated ranged from 45%?90% with a solar multiple range of 1.0-1.5. When introducing thermal energy storage (TES), the capacity value of the CSP plant is more difficult to estimate since one must account for energy in storage. We apply a capacity-factor-based technique under two different market settings: an energy-only market and an energy and capacity market. Our results show that adding TES to a CSP plant can increase its capacity value significantly at all of the locations. Adding a single hour of TES significantly increases the capacity value above the no-TES case, and with four hours of storage or more, the average capacity value at all locations exceeds 90%.

  8. Solar Energy and Capacity Value (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-09-01

    This is a one-page, two-sided fact sheet on the capacity of solar power to provide value to utilities and power system operators.

  9. Photovoltaics Value Analysis | Open Energy Information

    Open Energy Info (EERE)

    Tool Summary LAUNCH TOOL Name: Photovoltaics Value Analysis Focus Area: Renewable Energy Topics: Environmental Website: www.nrel.govanalysispdfs42303.pdf Equivalent URI:...

  10. Analytic Challenges to Valuing Energy Storage

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    analytical task. Market Conditions - Markets are continually evolving, and the long-term value of energy storage is difficult to capture. Niche markets have emerged, but...

  11. Analytic Challenges to Valuing Energy Storage

    SciTech Connect (OSTI)

    Ma, Ookie; O'Malley, Mark; Cheung, Kerry; Larochelle, Philippe; Scheer, Rich

    2011-10-25

    Electric grid energy storage value. System-level asset focus for mechanical and electrochemical energy storage. Analysis questions for power system planning, operations, and customer-side solutions.

  12. Austin Energy- Value of Solar Residential Rate

    Broader source: Energy.gov [DOE]

    Note: In August 2014, the City Council of Austin, Texas, enacted Resolution No. 20140828, which directed program changes to the Value of Solar Tariff as follows:

  13. Earned Value Management | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    development. DOE EVMS Risk Assessment Matrix - (MS Word) Formulas and Terminology "Gold Card" - September 2011 Road Show Presentation: Enhancing Earned Value (EV) Analysis Using ...

  14. Shared Value in Utility and Efficiency Partnerships

    Broader source: Energy.gov [DOE]

    Residential Energy Efficiency Solutions Conference: Shared Value in Utility and Efficiency Partnerships, July 10, 2012. Presents four case studies highlighting partnerships between local utilities and energy efficiency programs.

  15. COST OF ADDRESSING TARGETS OF UNEQUAL VALUE

    SciTech Connect (OSTI)

    G.H. CANAVAN

    2001-08-01

    The formalism for evaluating first strike costs and incentives for military targeting generalize to include higher value targets. That introduces two new allocations to the usual allocation between missiles and military targets, but they can be performed analytically. As the number of weapons on each side decreases, the optimal fraction of second strike weapons allocated to military values falls. The shift to high value targets is more pronounced below about 1,000 weapons for nominal parameters. Below 500 weapons the first striker's cost of action drops below its cost of inaction. A strike would induce a second strike of about 250 weapons on high value targets. An increase in the first striker's preference for damage to the other's high value targets increases or a decrease in its preference for preventing damage to its own high value targets decreases first strike costs and stability margins. Including defenses complicates allocations slightly. The main effect is increased attrition of second strikes, particularly at larger defenses, which makes it possible to significantly reduce damage to high value targets. At 1,000 weapons, by 300 to 400 interceptors the first striker's costs are reduced to 30% below that of inaction and the number of weapons delivered on the first striker's high value targets is reduced to about 100.

  16. Applying vitrification to meet customers` values

    SciTech Connect (OSTI)

    Roy, B. [Scientific Ecology Group, Inc., Oak Ridge, TN (United States)

    1996-03-01

    Cost-effective waste management solutions that maximize customer value require a thorough and flexible evaluation and integration of approaches, technology applications, and disposal options. This is particulary true in the application of vitrification to low-level radioactive and mixed waste stabilization. Case-specific evaluations are the required to determine the highest value, most cost-effective approaches.

  17. New Switches for Utility-Scale Inverters: First In-Class Demonstration of a Completely New Type of SiC Bipolar Switch (15kV-20kV) for Utility-Scale Inverters

    SciTech Connect (OSTI)

    2011-12-31

    Solar ADEPT Project: The SiCLAB is developing a new power switch for utility-scale PV inverters that would improve the performance and significantly reduce the size, weight, and energy loss of PV systems. A power switch controls the electrical energy flowing through an inverter, which takes the electrical current from a PV solar panel and converts it into the type and amount of electricity that is compatible with the electric grid. SiCLAB is using silicon carbide (SiC) semiconductors in its new power switches, which are more efficient than the silicon semiconductors used to conduct electricity in most conventional power switches today. Switches with SiC semiconductors can operate at much higher temperatures, as well as higher voltage and power levels than silicon switches. SiC-based power switches are also smaller than those made with silicon alone, so they result in much smaller and lighter electrical devices. In addition to their use in utility-scale PV inverters, SiCLABs new power switches can also be used in wind turbines, railways, and other smart grid applications.

  18. "Table A29. Average Prices of Selected Purchased Energy Sources...

    U.S. Energy Information Administration (EIA) Indexed Site

    ...,"(gallon)","(gallon)","(1000 cu ft)","(gallon)","(short ton)","Factors" ,"Total United States" "RSE Column Factors:",0.7,1.2,1.1,0.8,1.2,1 "Value of Shipments and Receipts " ...

  19. "Table A41. Average Prices of Selected Purchased Energy Sources...

    U.S. Energy Information Administration (EIA) Indexed Site

    ...allons)","(gallons)","(1000 cu ft)","(gallons)","(short tons)","Factors" ,"Total United States" "RSE Column Factors:",0.6,0.8,1.2,0.7,2.5,0.9 "Value of Shipments and Receipts" ...

  20. "Table A29. Average Prices of Selected Purchased Energy Sources...

    U.S. Energy Information Administration (EIA) Indexed Site

    ...","Electricity","Fuel Oil","Fuel Oil(b)","Gas(c)","LPG","Coal","Factors" ,"Total United States" "RSE Column Factors:",0.8,1.2,1.2,0.9,1.3,0.8 "Value of Shipments and Receipts" ...

  1. Table A44. Average Prices of Purchased Electricity and Steam

    U.S. Energy Information Administration (EIA) Indexed Site

    ...cs(a)","Supplier(b)","Supplier(c)","Supplier(b)","Supplier(c)","Factors" ,"Total United States" "RSE Column Factors:",0.3,1.6,1.5,1.3 "Value of Shipments and Receipts" "(million ...

  2. "Table A41. Average Prices of Selected Purchased Energy Sources...

    U.S. Energy Information Administration (EIA) Indexed Site

    ...","Electricity","Fuel Oil","Fuel Oil(b)","Gas(c)","LPG","Coal","Factors" ,"Total United States" "RSE Column Factors:",0.6,0.8,1.2,0.7,2.5,0.9 "Value of Shipments and Receipts" ...

  3. EI Summary of SIC 27

    U.S. Energy Information Administration (EIA) Indexed Site

    in printing by one or more common process such as letterpress, lithography (including offset), gravure, or screen; and those establishments which perform services for the printing...

  4. SiC Power Module

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... surfaces on the wings and flaps of the F-35 Joint Strike Fighter have been 22 R&D 100 ... Figure 11.3. The future of aviation is the More Electric Aircraft, such as the F-35 Joint ...

  5. EI Summary of SIC 26

    U.S. Energy Information Administration (EIA) Indexed Site

    try... Energy Consumption Use of Energy Electricity Manufacturing Floorspace Prices Energy Storage Energy and Operating Ratios Energy-Management Activities Technology...

  6. EI Summary of SIC 35

    U.S. Energy Information Administration (EIA) Indexed Site

    try... Energy Consumption Use of Energy Electricity Manufacturing Floorspace Prices Energy Storage Energy and Operating Ratios Energy-Management Activities Technology...

  7. EI Summary of SIC 33

    U.S. Energy Information Administration (EIA) Indexed Site

    try... Energy Consumption Use of Energy Electricity Manufacturing Floorspace Prices Energy Storage Energy and Operating Ratios Energy-Management Activities Technology...

  8. EI Summary of SIC 29

    U.S. Energy Information Administration (EIA) Indexed Site

    try... Energy Consumption Use of Energy Electricity Manufacturing Floorspace Prices Energy Storage Energy and Operating Ratios Energy-Management Activities Technology...

  9. EI Summary of SIC 22

    U.S. Energy Information Administration (EIA) Indexed Site

    try... Energy Consumption Use of Energy Electricity Manufacturing Floorspace Prices Energy Storage Energy and Operating Ratios Energy-Management Activities Technology...

  10. EI Summary of SIC 28

    U.S. Energy Information Administration (EIA) Indexed Site

    try... Energy Consumption Use of Energy Electricity Manufacturing Floorspace Prices Energy Storage Energy and Operating Ratios Energy-Management Activities Technology...

  11. EI Summary of SIC 30

    U.S. Energy Information Administration (EIA) Indexed Site

    try... Energy Consumption Use of Energy Electricity Manufacturing Floorspace Prices Energy Storage Energy and Operating Ratios Energy-Management Activities Technology...

  12. EI Summary of SIC 38

    U.S. Energy Information Administration (EIA) Indexed Site

    try... Energy Consumption Use of Energy Electricity Manufacturing Floorspace Prices Energy Storage Energy and Operating Ratios Energy-Management Activities Technology...

  13. EI Summary of SIC 25

    U.S. Energy Information Administration (EIA) Indexed Site

    try... Energy Consumption Use of Energy Electricity Manufacturing Floorspace Prices Energy Storage Energy and Operating Ratios Energy-Management Activities Technology...

  14. EI Summary of SIC 39

    U.S. Energy Information Administration (EIA) Indexed Site

    try... Energy Consumption Use of Energy Electricity Manufacturing Floorspace Prices Energy Storage Energy and Operating Ratios Energy-Management Activities Technology...

  15. EI Summary of SIC 32

    U.S. Energy Information Administration (EIA) Indexed Site

    try... Energy Consumption Use of Energy Electricity Manufacturing Floorspace Prices Energy Storage Energy and Operating Ratios Energy-Management Activities Technology...

  16. EI Summary of SIC 20

    U.S. Energy Information Administration (EIA) Indexed Site

    try... Energy Consumption Use of Energy Electricity Manufacturing Floorspace Prices Energy Storage Energy and Operating Ratios Energy-Management Activities Technology...

  17. EI Summary of SIC 23

    U.S. Energy Information Administration (EIA) Indexed Site

    try... Energy Consumption Use of Energy Electricity Manufacturing Floorspace Prices Energy Storage Energy and Operating Ratios Energy-Management Activities Technology...

  18. EI Summary of SIC 36

    U.S. Energy Information Administration (EIA) Indexed Site

    try... Energy Consumption Use of Energy Electricity Manufacturing Floorspace Prices Energy Storage Energy and Operating Ratios Energy-Management Activities Technology...

  19. EI Summary of SIC 34

    U.S. Energy Information Administration (EIA) Indexed Site

    try... Energy Consumption Use of Energy Electricity Manufacturing Floorspace Prices Energy Storage Energy and Operating Ratios Energy-Management Activities Technology...

  20. EI Summary of SIC 24

    U.S. Energy Information Administration (EIA) Indexed Site

    Lumber (24) All (20-39) Food (20) Textiles (22) Apparel (23) Furniture (25) Paper (26) Printing (27) Chemicals (28) Refineries (29) Rubber (30) Stone, Clay & Glass(32) Primary...

  1. SiC Power Module

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shuttle Bus and Couriers Shuttle Bus and Couriers Shuttle Bus Route and Schedule The DOE Shuttle Buses follow the same schedules between the two main Headquarters locations, Forrestal and Germantown. The buses start their routes at each Headquarters facility at the same times, see the schedule below. The subsequent stops at the other facilities are relative to the departure time of each route. The shuttle bus departure and arrival times may be impacted by traffic, weather, or other logistical

  2. Chapter 48 - Value Engineering | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    48ValueEngineering0.pdf More Documents & Publications Audit Report: OAS-L-07-08 Emerging Lighting Technology Microsoft PowerPoint - 12 Holman White PM Conference 2010 Rev 2...

  3. Value of Flexibility in the Markets

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Value of Flexibility in the Markets * Basic overview of the SPP and MISO markets * Potential benefit to some SPA customers of using markets to schedule energy * Increasing need for ancillary services, and the value of ancillary services in the markets 3 From presentation by ERCOT: Operational Challenges due to High Wind * Higher frequency deviations due to large system excursions * Inadequate transmission for projected wind growth * Constraint management under high and low wind * Difficulty in

  4. ARM - Value-Added Product Status Reports

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Status Reports Publications Journal Articles Conference Documents Program Documents & Technical Reports Publications Database Public Information Materials Image Library Videos Publication Resources Submit a Publication Publishing Procedures ARM Style Guide (PDF, 448KB) Acronyms Glossary Logos Contacts RSS for Publications Value-Added Product Status Reports ARM Climate Research Facility Quarterly Value-Added Product Report July 1-September 30, 2015 (PDF, 1MB) ARM Climate Research Facility

  5. Potential value of Cs-137 capsules

    SciTech Connect (OSTI)

    Bloomster, C.H.; Brown, D.R.; Bruno, G.A.; Hazelton, R.F.; Hendrickson, P.L.; Lezberg, A.J.; Tingey, G.L.; Wilfert, G.L.

    1985-04-01

    We determined the value of Cs-137 compared to Co-60 as a source for the irradiation of fruit (apples and cherries), pork and medical supplies. Cs-137, in the WESF capsule form, had a value of approximately $0.40/Ci as a substitute for Co-60 priced at approximately $1.00/Ci. The comparison was based on the available curies emitted from the surface of each capsule. We developed preliminary designs for fourteen irradiation facilities; seven were based on Co-60 and seven were based on Cs-137. These designs provided the basis for estimating capital and operating costs which, in turn, provided the basis for determining the value of Cs-137 relative to Co-60 in these applications. We evaluated the effect of the size of the irradiation facility on the value of Cs-137. The cost of irradiation is low compared to the value of the product. Irradiation of apples for disinfestation costs $.01 to .02 per pound. Irradiation for trichina-safe pork costs $.02 per pound. Irradiation of medical supplies for sterilization costs $.07 to .12 per pound. The cost of the irradiation source, either Co-60 or Cs-137, contributed only a minor amount to the total cost of irradiation, about 5% for the fruit and hog cases and about 20% for the medical supply cases. We analyzed the sensitivity of the irradiation costs and Cs-137 value to several key assumptions.

  6. Table 2. Value and average value of photovoltaic module shipments, 2014

    U.S. Energy Information Administration (EIA) Indexed Site

    Value and average value of photovoltaic module shipments, 2014" "Module value, total shipments (thousand dollars)" "Total Modules ",5425417 "Module average value (dollars per peak watt)" "Total Modules ",0.87 "Source: U.S. Energy Information Administration, Form EIA-63B, 'Annual Photovoltaic Cell/Module Shipments Report' Note: Dollars are not adjusted for inflation.

  7. " by Census Region, Census Division, Industry Group, Selected Industries, and"

    U.S. Energy Information Administration (EIA) Indexed Site

    Total Inputs of Energy for Heat, Power, and Electricity Generation" " by Census Region, Census Division, Industry Group, Selected Industries, and" " Presence of Industry-Specific Technologies for Selected Industries, 1994: Part 1" " (Estimates in Trillion Btu)" ,,,," Census Region",,,,,,,"Census Division",,,,,"RSE" "SIC"," ",,,,,,,"Middle","East North","West

  8. " Census Region, Census Division, Industry Group, and Selected Industries, 1994"

    U.S. Energy Information Administration (EIA) Indexed Site

    Quantity of Purchased Electricity and Steam by Type of Supplier," " Census Region, Census Division, Industry Group, and Selected Industries, 1994" " (Estimates in Btu or Physical Units)" ,," Electricity",," Steam" ,," (million kWh)",," (billion Btu)" ,,,,,,"RSE" "SIC",,"Utility","Nonutility","Utility","Nonutility","Row" "Code(a)","Industry Group

  9. " by Type of Supplier, Census Region, Census Division, Industry Group,"

    U.S. Energy Information Administration (EIA) Indexed Site

    3. Average Prices of Purchased Electricity and Steam" " by Type of Supplier, Census Region, Census Division, Industry Group," " and Selected Industries, 1994" " (Estimates in Dollars per Physical Units)" ,," Electricity",," Steam" ,," (kWh)",," (million Btu)" ,,,,,,"RSE" "SIC",,"Utility","Nonutility","Utility","Nonutility","Row"

  10. " Generation by Census Region, Industry Group, Selected Industries, Presence of"

    U.S. Energy Information Administration (EIA) Indexed Site

    4. Total Inputs of Energy for Heat, Power, and Electricity" " Generation by Census Region, Industry Group, Selected Industries, Presence of" " General Technologies, and Industry-Specific Technologies for Selected" " Industries, 1991" " (Estimates in Trillion Btu)" ,,," Census Region",,,,"RSE" "SIC","Industry Groups",," -------------------------------------------",,,,"Row"

  11. " Electricity Generation by Employment Size Categories, Industry Group, and"

    U.S. Energy Information Administration (EIA) Indexed Site

    Total Consumption of Offsite-Produced Energy for Heat, Power, and" " Electricity Generation by Employment Size Categories, Industry Group, and" " Selected Industries, 1991" " (Estimates in Trillion Btu)" ,,,,,"Employment Size(b)" ,,,"-","-","-","-","-","-","RSE" "SIC"," "," "," ",,,,,"1,000","Row"

  12. "Table A2. Total Consumption of LPG, Distillate Fuel Oil, and Residual Fuel"

    U.S. Energy Information Administration (EIA) Indexed Site

    . Total Consumption of LPG, Distillate Fuel Oil, and Residual Fuel" " Oil for Selected Purposes by Census Region, Industry Group, and Selected" " Industries, 1991" " (Estimates in Barrels per Day) " ,,,,," Input for Heat,",,," Primary" " ",," Consumption for All Purposes",,,"Power, and Generation of Electricity",,," Consumption for Nonfuel Purposes ",,,"RSE" "SIC",,"

  13. "Table A22. Total Quantity of Purchased Energy Sources by Census Region,"

    U.S. Energy Information Administration (EIA) Indexed Site

    2. Total Quantity of Purchased Energy Sources by Census Region," " Industry Group, and Selected Industries, 1991" " (Estimates in Btu or Physical Units)" ,,,,,,"Natural",,,"Coke" " "," ","Total","Electricity","Residual","Distillate","Gas(c)"," ","Coal","and Breeze"," ","RSE" "SIC","

  14. "Table A24. Total Expenditures for Purchased Energy Sources by Census Region,"

    U.S. Energy Information Administration (EIA) Indexed Site

    4. Total Expenditures for Purchased Energy Sources by Census Region," " Industry Group, and Selected Industries, 1991" " (Estimates in Million Dollars)" ,,,,,,,,,,,"RSE" "SIC"," "," "," ","Residual","Distillate ","Natural"," "," ","Coke"," ","Row" "Code(a)","Industry Groupsc and

  15. "Table A25. Average Prices of Selected Purchased Energy Sources by Census"

    U.S. Energy Information Administration (EIA) Indexed Site

    . Average Prices of Selected Purchased Energy Sources by Census" " Region, Industry Group, and Selected Industries, 1991: Part 1" " (Estimates in Dollars per Physical Unit)" ,,,,," " " "," "," ","Residual","Distillate","Natural Gas(c)"," "," ","RSE" "SIC"," ","Electricity","Fuel Oil","Fuel

  16. "Table A32. Total Quantity of Purchased Energy Sources by Census Region,"

    U.S. Energy Information Administration (EIA) Indexed Site

    Quantity of Purchased Energy Sources by Census Region," " Census Division, Industry Group, and Selected Industries, 1994" " (Estimates in Btu or Physical Units)" ,,,,,,"Natural",,,"Coke" " "," ","Total","Electricity","Residual","Distillate","Gas(c)"," ","Coal","and Breeze"," ","RSE" "SIC","

  17. "Table A36. Total Expenditures for Purchased Energy Sources by Census Region,"

    U.S. Energy Information Administration (EIA) Indexed Site

    6. Total Expenditures for Purchased Energy Sources by Census Region," " Census Division, Industry Group, and Selected Industries, 1994" " (Estimates in Million Dollars)" ,,,,,,,,,,,"RSE" "SIC"," "," "," ","Residual","Distillate ","Natural"," "," ","Coke"," ","Row" "Code(a)","Industry Group and

  18. "Table A38. Total Expenditures for Purchased Electricity, Steam, and Natural Gas"

    U.S. Energy Information Administration (EIA) Indexed Site

    8. Total Expenditures for Purchased Electricity, Steam, and Natural Gas" " by Type of Supplier, Census Region, Census Division, Industry Group," " and Selected Industries, 1994" " (Estimates in Million Dollars)" ,," Electricity",," Steam" ,,,,,,"RSE" "SIC",,"Utility","Nonutility","Utility","Nonutility","Row" "Code(a)","Industry Group and

  19. "Table A40. Average Prices of Selected Purchased Energy Sources by Census"

    U.S. Energy Information Administration (EIA) Indexed Site

    Region, Census Division, Industry Group, and Selected Industries, 1994: Part 2" " (Estimates in Dollars per Million Btu)" ,,,,,,,,"RSE" "SIC"," "," ","Residual","Distillate"," "," "," ","Row" "Code(a)","Industry Group and Industry","Electricity","Fuel Oil","Fuel Oil(b)","Natural

  20. "Table A7. Enclosed Floorspace and Conditioned Floorspace"

    U.S. Energy Information Administration (EIA) Indexed Site

    Enclosed Floorspace and Conditioned Floorspace" " by Industry Group and Selected Industries, 1994" ,,"Approximate",,"Average" ,,"Enclosed",,"Enclosed"," Conditioned(c) Floorspace" ,,"Floorspace of All",,"Floorspace per"," of All Buildings Onsite",,"RSE" "SIC",,"Buildings Onsite","Establishments(b)","Establishment",,,"Row"

  1. Table A17. Total First Use (formerly Primary Consumption) of Energy for All P

    U.S. Energy Information Administration (EIA) Indexed Site

    Total First Use (formerly Primary Consumption) of Energy for All Purposes" " by Employment Size Categories, Industry Group, and Selected Industries, 1994" " (Estimates in Trillion Btu)" ,,,," "," Employment Size(b)" ,,,,,,,,,"RSE" "SIC"," "," "," "," "," "," "," ",1000,"Row" "Code(a)","Industry Group and

  2. Table A18. Quantity of Electricity Sold to Utility and Nonutility Purchasers

    U.S. Energy Information Administration (EIA) Indexed Site

    8. Quantity of Electricity Sold to Utility and Nonutility Purchasers" " by Census Region, Industry Group, and Selected Industries, 1991" " (Estimates in Million Kilowatthours)" " "," "," "," "," ","RSE" "SIC"," "," ","Utility ","Nonutility","Row" "Code(a)","Industry Groups and Industry","Total

  3. Table A30. Quantity of Electricity Sold to Utility and Nonutility Purchasers

    U.S. Energy Information Administration (EIA) Indexed Site

    Quantity of Electricity Sold to Utility and Nonutility Purchasers" " by Census Region, Census Division, Industry Group, and Selected Industries, 1994" " (Estimates in Million Kilowatthours)" " "," "," "," "," ","RSE" "SIC"," "," ","Utility ","Nonutility","Row" "Code(a)","Industry Group and Industry","Total

  4. Table A41. Total Inputs of Energy for Heat, Power, and Electricity

    U.S. Energy Information Administration (EIA) Indexed Site

    A41. Total Inputs of Energy for Heat, Power, and Electricity" " Generation by Census Region, Industry Group, Selected Industries, and Type of" " Energy Management Program, 1991" " (Estimates in Trillion Btu)" ,,," Census Region",,,,"RSE" "SIC","Industry Groups",," -------------------------------------------",,,,"Row" "Code(a)","and

  5. Table A50. Total Inputs of Energy for Heat, Power, and Electricity Generatio

    U.S. Energy Information Administration (EIA) Indexed Site

    A50. Total Inputs of Energy for Heat, Power, and Electricity Generation" " by Census Region, Industry Group, Selected Industries, and Type of" " Energy-Management Program, 1994" " (Estimates in Trillion Btu)" ,,,," Census Region",,,"RSE" "SIC",,,,,,,"Row" "Code(a)","Industry Group and

  6. "RSE Table C10.1. Relative Standard Errors for Table C10.1;...

    U.S. Energy Information Administration (EIA) Indexed Site

    Know" ,,"Total United States" , 311,"Food",3,1,4,2,1,2... 324110," Petroleum Refineries",15,10,36,15,25,44,15,3... Know" ,,"Total United States" , ...

  7. "RSE Table N5.1. Relative Standard Errors for Table N5.1;...

    U.S. Energy Information Administration (EIA) Indexed Site

    ","FurnaceCoke"," ","Petroleum","or","Wood ... ,,"Total United States" , 311,"Food",2,0,1,0,0,0... 324110," Petroleum Refineries",4,0,3,6,0,0,24 ...

  8. "RSE Table N7.1. Relative Standard Errors for Table N7.1;...

    U.S. Energy Information Administration (EIA) Indexed Site

    Shipments" ,,"Total United States" , 311,"Food",1,1,1 311221," ... Printing",4,5,4 324,"Petroleum and Coal Products",4,3,3 324110," Petroleum Refineries",3,3,3 ...

  9. "RSE Table C2.1. Relative Standard Errors for Table C2.1;...

    U.S. Energy Information Administration (EIA) Indexed Site

    ,,"Total United States" , 311,"Food",4,0,3,0,1,0... 324,"Petroleum and Coal Products ... "produced at refineries or natural gas ...

  10. "RSE Table N11.2. Relative Standard Errors for Table N11.2;...

    U.S. Energy Information Administration (EIA) Indexed Site

    ... by" "petroleum refineries, rather than purchased ... ,,"Total United States" , 311,"Food",1,1,3,3,1,1... 324,"Petroleum and Coal ...