National Library of Energy BETA

Sample records for uut ge sn

  1. Characteristics of Sn segregation in Ge/GeSn heterostructures

    SciTech Connect (OSTI)

    Li, H.; Chang, C.; Chen, T. P.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Shi, Z. W.; Chen, H. [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-10-13

    We report an investigation of Sn segregation in Ge/GeSn heterostructures occurred during the growth by molecular beam epitaxy. The measured Sn profile in the Ge layer shows that: (a) the Sn concentration decreases rapidly near the Ge/GeSn interface, and (b) when moving away from the interface, the Sn concentration reduced with a much slower rate. The 1/e decay lengths of the present system are much longer than those of the conventional group IV system of Ge segregation in the Si overlayer because of the smaller kinetic potential as modeled by a self-limited two-state exchange scheme. The demonstration of the Sn segregation shows the material characteristics of the heterostructure, which are needed for the investigation of its optical properties.

  2. Giant Piezoelectricity in Monolayer Group IV Monochalcogenides: SnSe, SnS, GeSe and GeS

    E-Print Network [OSTI]

    Fei, Ruixiang; Li, Ju; Yang, Li

    2015-01-01

    We predict enormous piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their characteristic piezoelectric coefficients are about two orders of magnitude larger than those of other 2D materials, such as MoS2 and GaSe, and bulk quartz and AlN which are widely used in industry. This enhancement is a result of the unique "puckered" D2h symmetry and weaker chemical bonds of monolayer group IV monochalcogenides. Given the achieved experimental advances in fabrication of monolayers, their flexible character and ability to withstand enormous strain, these 2D structures with giant piezoelectric effects may be promising for a broad range of applications, such as nano-sized sensors, piezotronics, and energy harvesting in portable electronic devices.

  3. Formation of non-substitutional ?-Sn defects in Ge{sub 1?x}Sn{sub x} alloys

    SciTech Connect (OSTI)

    Fuhr, J. D.; Ventura, C. I.; Barrio, R. A.

    2013-11-21

    Although group IV semiconductor alloys are expected to form substitutionally, in Ge{sub 1?x}Sn{sub x} this is true only for low concentrations (x?Sn), consisting of a single Sn atom in the center of a Ge divacancy, which may account for the segregation of Sn at large x. Afterwards, the existence of this defect was confirmed experimentally. In this paper we study the local environment and the interactions of the substitutional defect (?-Sn), the vacancy in Ge, and the ?-Sn defect by performing extensive numerical ab initio calculations. Our results confirm that a ?-Sn defect can be formed by natural diffusion of a vacancy around the substitutional ?-Sn defect, since the energy barrier for the process is very small.

  4. Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate

    SciTech Connect (OSTI)

    Taoka, Noriyuki, E-mail: ntaoka@alice.xtal.nagoya-u.ac.jp; Fukudome, Motoshi; Takeuchi, Wakana; Arahira, Takamitsu; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2014-05-07

    The interaction of Sn atoms with defects induced by Sn implantation of Ge substrates with antimony (Sb) as an n-type dopant and the impact of H{sub 2} annealing on these defects were investigated by comparison with defects induced by Ge self-implantation. In the Ge samples implanted with either Sn or Ge, and annealed at temperatures of less than 200?°C, divacancies, Sb-vacancy complexes with single or double acceptor-like states, and defects related to Sb and interstitial Ge atoms were present. On the other hand, after annealing at 500?°C in an N{sub 2} or H{sub 2} atmosphere, defects with different structures were observed in the Sn-implanted samples by deep level transition spectroscopy. The energy levels of the defects were 0.33?eV from the conduction band minimum and 0.55?eV from the valence band maximum. From the capacitance-voltage (C-V) characteristics, interaction between Sn atoms and defects after annealing at 500?°C was observed. The effect of H{sub 2} annealing at around 200?°C was observed in the C-V characteristics, which can be attributed to hydrogen passivation, and this effect was observed in both the Ge- and Sn-implanted samples. These results suggest the presence of defects that interact with Sn or hydrogen atoms. This indicates the possibility of defect control in Ge substrates by Sn or hydrogen incorporation. Such defect control could yield high-performance Ge-based devices.

  5. Study on the Ge{sub 1?x}Sn{sub x}/HfO{sub 2} interface and its impacts on Ge{sub 1?x}Sn{sub x} tunneling transistor

    SciTech Connect (OSTI)

    Qiu, Yingxin; Wang, Runsheng, E-mail: ruhuang@pku.edu.cn, E-mail: r.wang@pku.edu.cn; Huang, Qianqian; Huang, Ru, E-mail: ruhuang@pku.edu.cn, E-mail: r.wang@pku.edu.cn [Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871 (China)

    2014-06-21

    In this paper, we employ first-principle calculation to investigate the Ge{sub 1?x}Sn{sub x}/HfO{sub 2} interface, and then evaluate its impacts on Ge{sub 1?x}Sn{sub x} tunneling field-effect transistor (TFET). First-principle calculations of Ge{sub 1?x}Sn{sub x}/HfO{sub 2} interfaces in the oxygen-rich process atmosphere indicate that the interface states originate from the Ge and Sn dangling bond, rather than Hf-bond. The total density of state shows that there are more interface states in the semiconductor bandgap with increasing Sn fraction. By further incorporating the material and interface parameters from density functional theory calculation into advanced device simulation, the electrical characteristics of Ge{sub 1?x}Sn{sub x} TFET are investigated. Removing the Sn atom from the first atom layer of Ge{sub 1?x}Sn{sub x} in device processes is found to be beneficial to reduce the degradations. For the degradation mechanisms, the trap-assisted-tunneling is the dominant mechanism at the low Sn fraction, and enhanced Shockley-Read-Hall recombination induced by traps becomes the dominant mechanism with increasing Sn fraction. The results are helpful for the interface optimization of Ge{sub 1?x}Sn{sub x} TFET.

  6. Electrical characteristics of Ni Ohmic contact on n-type GeSn

    SciTech Connect (OSTI)

    Li, H.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan (China); Lee, L. C.; Lee, C. P. [Center for Nano Science and Technology, National Chiao Tung University, Hsinchu 300, Taiwan (China); Su, L. H.; Suen, Y. W. [Department of Physics and Institute of Nano Science, National Chung Hsing University, Taichung 402, Taiwan (China)

    2014-06-16

    We report an investigation of the electrical and material characteristics of Ni on an n-type GeSn film under thermal annealing. The current-voltage traces measured with the transmission line method are linear for a wide range of annealing temperatures. The specific contact resistivity was found to decrease with increasing annealing temperature, followed by an increase as the annealing temperature further increased, with a minimum value at an annealing temperature of 350?°C. The material characteristics at the interface layer were measured by energy-dispersive spectrometer, showing that an atomic ratio of (Ni)/(GeSn)?=?1:1 yields the lowest specific contact resistivity.

  7. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

    SciTech Connect (OSTI)

    Senaratne, C. L.; Kouvetakis, J. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604 (United States); Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menéndez, J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Aoki, Toshihiro [LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704 (United States)

    2014-10-07

    Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ? 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ? 0.06, the CVD precursors used were digermane Ge?H? and deuterated stannane SnD?. For y ? 0.06, the Ge precursor was changed to trigermane Ge?H?, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge?H?? as the Ge source. The photoluminescence intensity from Ge{sub 1–y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1–y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1–y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1–y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1–y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 ?m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1–y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1–x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamond–cubic lattice.

  8. The interaction between divacancies and shallow dopants in irradiated Ge:Sn

    SciTech Connect (OSTI)

    Khirunenko, L. I.; Pomozov, Yu. V.; Sosnin, M. G.; Abrosimov, N. V.; Riemann, H.

    2014-02-21

    It has been found that upon annealing of irradiated Ge doped with gallium and Sn simultaneously with disappearance of divacancies V{sub 2}{sup 0} the appearance of the new absorption spectrum consisting of sharp lines was observed. The spectrum is identical to the absorption spectrum of gallium. It is shown that the defect, to which the new spectrum corresponds, has hydrogen-like properties. The distances between the lines in the spectrum are in good agreement with those predicted by effective-mass theory. The appearance of Fano resonance in the continuum region in addition to intracenter transitions of the defect was detected. The defect found is identified as SnV{sub 2}{sup 0}Ga. The binding energy for the ground state of the SnV{sub 2}{sup 0}Ga centers has been estimated.

  9. Large grain growth of Ge-rich Ge{sub 1?x}Sn{sub x} (x???0.02) on insulating surfaces using pulsed laser annealing in flowing water

    SciTech Connect (OSTI)

    Kurosawa, Masashi, E-mail: kurosawa@alice.xtal.nagoya-u.ac.jp [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Ikenoue, Hiroshi [Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)

    2014-02-10

    We investigate Sn incorporation effects on the growth characteristics of Ge-rich Ge{sub 1?x}Sn{sub x} (x?Sn content of 2%, Sn atoms within the GeSn layers play a role in preventing ablation and aggregation of the layers during these PLA. Raman and electron backscatter diffraction measurements demonstrate achievement of large-grain (?800?nm?) growth of Ge{sub 0.98}Sn{sub 0.02} polycrystals by using PLA in water. These polycrystals also show a tensile-strain of ?0.68%. This result opens up the possibility for developing GeSn-based devices fabricated on flexible substrates as well as Si platforms.

  10. Structure and magnetism in strained Ge{sub 1-x-y}Sn{sub x}Mn{sub y} films grown on Ge(001) by low temperature molecular beam epitaxy

    SciTech Connect (OSTI)

    Prestat, E. [INAC, SP2M, CEA and Universite Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France); Karlsruher Institut fuer Technologie (KIT), Laboratorium fuer Elektronenmikroskopie, D-76128 Karlsruhe (Germany); Barski, A.; Bellet-Amalric, E.; Morel, R.; Tainoff, D.; Jain, A.; Porret, C.; Bayle-Guillemaud, P.; Jamet, M. [INAC, SP2M, CEA and Universite Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France); Jacquot, J.-F. [INAC, SCIB, CEA and Universite Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France)

    2013-07-01

    In this letter, we study the structural and magnetic properties of Ge{sub 1-x-y}Sn{sub x}Mn{sub y} films grown on Ge(001) by low temperature molecular beam epitaxy using X-ray diffraction, high resolution transmission electron microscopy, and superconducting quantum interference device. Like in Mn doped Ge films, Mn atoms diffuse during the growth and aggregate into vertically aligned Mn-rich nanocolumns of a few nanometers in diameter. Transmission electron microscopy observations in plane view clearly indicate that the Sn incorporation is not uniform with concentration in Mn rich vertical nanocolumns lower than the detection limit of electron energy loss spectroscopy. The matrix exhibits a GeSn solid solution while there is a Sn-rich GeSn shell around GeMn nanocolumns. The magnetization in Ge{sub 1-x-y}Sn{sub x}Mn{sub y} layers is higher than in Ge{sub 1-x}Mn{sub x} films. This magnetic moment enhancement in Ge{sub 1-x-y}Sn{sub x}Mn{sub y} is probably related to the modification of the electronic structure of Mn atoms in the nanocolumns by the Sn-rich shell, which is formed around the nanocolumns.

  11. Band alignment at interfaces of amorphous Al{sub 2}O{sub 3} with Ge{sub 1?x}Sn{sub x}- and strained Ge-based channels

    SciTech Connect (OSTI)

    Chou, H.-Y.; Afanas'ev, V. V., E-mail: valeri.afanasiev@fys.kuleuven.be; Houssa, M.; Stesmans, A. [Department of Physics, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium); Vincent, B.; Gencarelli, F.; Shimura, Y.; Merckling, C.; Loo, R. [Imec, Kapeldreef 75, B-3001 Leuven (Belgium); Nakatsuka, O.; Zaima, S. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2014-05-19

    Spectroscopy of internal photoemission of electrons from Ge and Ge{sub 1?x}Sn{sub x} (x???0.08) alloys into amorphous Al{sub 2}O{sub 3} is used to evaluate the energy of the semiconductor valence band top. It is found that in Ge and Ge{sub 1?x}Sn{sub x} the valence bands are aligned within the measurement accuracy (±0.05?eV) irrespective of the strain imposed on the semiconductor or by the kind of passivating inter-layer applied between the semiconductor and alumina. This indicates that the Ge{sub 1?x}Sn{sub x}-stressor approach may be useful for strain engineering in p-channel Ge metal-oxide-semiconductor transistors.

  12. In search of high performance anode materials for Mg batteries: computational studies of Mg in Ge, Si, and Sn

    E-Print Network [OSTI]

    Malyi, Oleksandr I; Manzhos, Sergei; 10.1016/j.jpowsour.2013.01.114

    2013-01-01

    We present ab initio studies of structures, energetics, and diffusion properties of Mg in Si, Ge, and Sn diamond structures to evaluate their potential as insertion type anode materials for Mg batteries. We show that Si could provide the highest specific capacities (3817 mAh g-1) and the lowest average insertion voltage (~0.15 eV vs. Mg) for Mg storage. Nevertheless, due to its significant percent lattice expansion (~216%) and slow Mg diffusion, Sn and Ge are more attractive; both anodes have lower lattice expansions (~120 % and ~178 %, respectively) and diffusion barriers (~0.50 and ~0.70 eV, respectively for single-Mg diffusion) than Si. We show that Mg-Mg interactions at different stages of charging can decrease significantly the diffusion barrier compared to the single atom diffusion, by up to 0.55 eV.

  13. Sr{sub 7}Ge{sub 6}, Ba{sub 7}Ge{sub 6} and Ba{sub 3}Sn{sub 2} -Three new binary compounds containing dumbbells and four-membered chains of tetrel atoms with considerable Ge-Ge {pi}-bonding character

    SciTech Connect (OSTI)

    Siggelkow, Lisa; Hlukhyy, Viktor [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany); Faessler, Thomas F., E-mail: thomas.faessler@lrz.tum.de [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany)

    2012-07-15

    The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} were prepared by arc melting and annealing in welded tantalum ampoules using induction as well as resistance furnaces. The compounds were investigated by powder and single crystal X-ray diffraction. Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} crystallize in the Ca{sub 7}Sn{sub 6} structure type (space group Pmna, Z=4: a=7.777(2) A, b=23.595(4) A, c=8.563(2) A, wR{sub 2}=0.081 (all data), 2175 independent reflections, 64 variable parameters for Sr{sub 7}Ge{sub 6} and a=8.0853(6) A, b=24.545(2) A, c=8.9782(8) A, wR{sub 2}=0.085 (all data), 2307 independent reflections, 64 variable parameters for Ba{sub 7}Ge{sub 6}). Ba{sub 3}Sn{sub 2} crystallizes in an own structure type with the space group P4{sub 3}2{sub 1}2, Z=4, a=6.6854(2) A, c=17.842(2) A, wR{sub 2}=0.037 (all data), 1163 independent reflections, 25 variable parameters. In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains. Their crystal structures cannot be rationalized according to the (8-N) rule. In contrast, Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. The chemical bonding situation in these structures is discussed on the basis of partial and total Density Of States (DOS) curves, band structures including fatbands, topological analysis of the Electron Localization Function (ELF) as well as Bader analysis of the bond critical points using the programs TB-LMTO-ASA and WIEN2K. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, all germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. The {pi}-bonding character of the germanides is best reflected by the resonance hybrid structures {l_brace}[Ge-Ge]{sup 6-}/[Ge-{sup ....}Ge-{sup ....}Ge-{sup ....}Ge]{sup 8-}{r_brace}{r_reversible}{l_brace}[Ge=Ge]{sup 4-}/[Ge-Ge-Ge-Ge]{sup 10-}{r_brace}. - Graphical abstract: The structure of Ba{sub 3}Sn{sub 2} contains Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains are the predominant features in Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6}. Their crystal structures cannot be rationalized according to the (8-N) rule. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, the germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. Highlights: Black-Right-Pointing-Pointer The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} have been synthesized. Black-Right-Pointing-Pointer In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as dumbbells and four-membered atom chains. Black-Right-Pointing-Pointer Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif. Black-Right-Pointing-Pointer The chemical bonding situation within these structures is discussed.

  14. Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration

    SciTech Connect (OSTI)

    Li, Haofeng; Brouillet, Jeremy; Wang, Xiaoxin; Liu, Jifeng

    2014-11-17

    We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450?°C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18??m long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.

  15. Wave-function engineering and absorption spectra in Si{sub 0.16}Ge{sub 0.84}/Ge{sub 0.94}Sn{sub 0.06}/Si{sub 0.16}Ge{sub 0.84} strained on relaxed Si{sub 0.10}Ge{sub 0.90} type I quantum well

    SciTech Connect (OSTI)

    Yahyaoui, N., E-mail: naima.yahyaoui@yahoo.fr, E-mail: moncef-said@yahoo.fr; Sfina, N.; Said, M., E-mail: naima.yahyaoui@yahoo.fr, E-mail: moncef-said@yahoo.fr [Laboratoire de la Matière Condensée et des Nanosciences (LMCN), Département de Physique, Faculté des Sciences de Monastir, Avenue de l'Environnement, 5019 Monastir (Tunisia); Lazzari, J.-L. [Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), UMR CNRS 7325, Aix-Marseille Université, Case 913, Campus de Luminy, 13288 Marseille cedex 9 (France); Bournel, A. [Institut d'Electronique Fondamentale (IEF), UMR CNRS 8622, Université Paris-Sud, Bât. 220, 91405 Orsay cedex (France)

    2014-01-21

    We theoretically investigate germanium-tin alloy as a semiconductor for the design of near infrared optical modulators in which the Ge{sub 1?x}Sn{sub x} alloy is the active region. We have calculated the electronic band parameters for heterointerfaces between strained Ge{sub 1?x}Sn{sub x} and relaxed Si{sub 1?y}Ge{sub y}. Then, a type-I strain-compensated Si{sub 0.10}Ge{sub 0.90}/Si{sub 0.16}Ge{sub 0.84}/Ge{sub 0.94}Sn{sub 0.06} quantum well heterostructure optimized in terms of compositions and thicknesses is studied by solving Schrödinger equation without and under applied bias voltage. The strong absorption coefficient (>1.5?×?10{sup 4}?cm{sup ?1}) and the shift of the direct transition under large Stark effect at 3?V are useful characteristics for the design of optoelectronic devices based on compressively strained IV-IV heterostructures at near infrared wavelengths.

  16. Indirect-to-direct band gap transition in relaxed and strained Ge{sub 1?x?y}Si{sub x}Sn{sub y} ternary alloys

    SciTech Connect (OSTI)

    Attiaoui, Anis; Moutanabbir, Oussama [Department of Engineering Physics, École Polytechnique de Montréal, Montréal, C.P. 6079, Succ. Centre-Ville, Montréal, Québec H3C 3A7 (Canada)

    2014-08-14

    Sn-containing group IV semiconductors create the possibility to independently control strain and band gap thus providing a wealth of opportunities to develop an entirely new class of low dimensional systems, heterostructures, and silicon-compatible electronic and optoelectronic devices. With this perspective, this work presents a detailed investigation of the band structure of strained and relaxed Ge{sub 1?x?y}Si{sub x}Sn{sub y} ternary alloys using a semi-empirical second nearest neighbors tight binding method. This method is based on an accurate evaluation of the deformation potential constants of Ge, Si, and ?-Sn using a stochastic Monte-Carlo approach as well as a gradient based optimization method. Moreover, a new and efficient differential evolution approach is also developed to accurately reproduce the experimental effective masses and band gaps. Based on this, we elucidated the influence of lattice disorder, strain, and composition on Ge{sub 1?x?y}Si{sub x}Sn{sub y} band gap energy and directness. For 0???x???0.4 and 0???y???0.2, we found that tensile strain lowers the critical content of Sn needed to achieve a direct band gap semiconductor with the corresponding band gap energies below 0.76?eV. This upper limit decreases to 0.43?eV for direct gap, fully relaxed ternary alloys. The obtained transition to direct band gap is given by y?>?0.605?×?x?+?0.077 and y?>?1.364?×?x?+?0.107 for epitaxially strained and fully relaxed alloys, respectively. The effects of strain, at a fixed composition, on band gap directness were also investigated and discussed.

  17. Thermoelectric and microstructural properties of Pb{sub 0.9-x}Sn{sub 0.1}Ge{sub x}Te compounds prepared by spinodal decomposition

    SciTech Connect (OSTI)

    Sondergaard, M.; Christensen, M.; Johnsen, S. [Center for Energy Materials, Department of Chemistry and iNANO, Aarhus University, DK-8000 Aarhus C (Denmark); Stiewe, C.; Dasgupta, T.; Mueller, E. [German Aerospace Center (DLR), Linder Hoehe, DE-51147 Cologne (Germany); Iversen, B.B., E-mail: bo@chem.au.d [Center for Energy Materials, Department of Chemistry and iNANO, Aarhus University, DK-8000 Aarhus C (Denmark)

    2011-05-15

    Three samples of Pb{sub 0.9-x}Sn{sub 0.1}Ge{sub x}Te with x=0.25, 0.35, 0.6 were prepared by heating the mixtures above the melting point of the constituent elements followed by quenching in water. The x=0.6 sample is close to the center of the immiscibility region, while the x=0.25 and 0.35 samples are in the Pb rich region inside the spinodal miscibility gap. Microstructural investigations using Powder X-ray Diffraction, Scanning Electron Microscopy and Energy Dispersive X-ray Spectroscopy revealed both GeTe-rich and PbTe-rich phases. The samples were uniaxially hot pressed and the thermoelectric properties were characterized in the temperature range 2-400 K using a commercial apparatus and from 300 to 650 K with a custom designed setup. The best sample (x=0.6) reached zT{approx}0.6 at 650 K, while the x=0.25 and 0.35 samples showed thermal instability at elevated temperatures. -- Graphical abstract: Spinodal decomposition in the GeTe-SnTe-PbTe system demonstrated by SEM and EXS images. Display Omitted Highlights: {yields} Investigation of Pb-rich part of the spinodal miscibility gap in PbTe-SnTe-GeTe. {yields} zT=0.6 at 650 K reproduced for Pb{sub 0.3}Sn{sub 0.1}Ge{sub 0.6}Te. {yields} Pb-rich phases shown to be thermally instable. {yields} Thermoelectric property characterization at low and high temperature. {yields} Microstructural investigations using PXRD, SEM, EDX and PSM.

  18. Local density functional calculations of the electronic structures of the intermetallic systems U{sub 2}Fe{sub 2}Sn and UFe{sub 2}Ge{sub 2}

    SciTech Connect (OSTI)

    Matar, S.F.; Chevalier, B.; Etourneau, J.; Eyert, V.

    1997-02-05

    The electronic structures of U{sub 2}Fe{sub 2}Sn and UFe{sub 2}Ge{sub 2} are self-consistently calculated within the local density functional theory using the augmented spherical wave (ASW) method. Calculations are scalar relativistic. The experimentally observed Pauli paramagnetic behavior of the two systems is accounted for and the influence of hybridization between the different l-states on the chemical bonding is discussed from the site-projected densities of states (DOS) as well as from the modulation of the DOS by the sign and magnitude of the overlap integral, i.e., with the so-called COOP. From this, we propose a mechanism for the evolution of bonding within the series to which the two compounds belong. 12 refs., 3 figs.

  19. SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6} - two new Ae-Zn-Sn polar intermetallic compounds (Ae: alkaline earth metal)

    SciTech Connect (OSTI)

    Stegmaier, Saskia [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstrasse 4, 85747 Garching (Germany); Faessler, Thomas F., E-mail: Thomas.Faessler@lrz.tum.de [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstrasse 4, 85747 Garching (Germany)

    2012-08-15

    SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6}, two closely related new polar intermetallic compounds, were obtained by high temperature reactions of the elements. Their crystal structures were determined with single crystal XRD methods, and their electronic structures were analyzed by means of DFT calculations. The Zn-Sn structure part of SrZn{sub 2}Sn{sub 2} comprises (anti-)PbO-like {l_brace}ZnSn{sub 4/4}{r_brace} and {l_brace}SnZn{sub 4/4}{r_brace} layers. Ca{sub 2}Zn{sub 3}Sn{sub 6} shows similar {l_brace}ZnSn{sub 4/4}{r_brace} layers and {l_brace}Sn{sub 4}Zn{r_brace} slabs constructed of a covalently bonded Sn scaffold capped by Zn atoms. For both phases, the two types of layers are alternatingly stacked and interconnected via Zn-Sn bonds. SrZn{sub 2}Sn{sub 2} adopts the SrPd{sub 2}Bi{sub 2} structure type, and Ca{sub 2}Zn{sub 3}Sn{sub 6} is isotypic to the R{sub 2}Zn{sub 3}Ge{sub 6} compounds (R=La, Ce, Pr, Nd). Band structure calculations indicate that both SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6} are metallic. Analyses of the chemical bonding with the electron localization function (ELF) show lone pair like basins at Sn atoms and Zn-Sn bonding interactions between the layers for both title phases, and covalent Sn-Sn bonding within the {l_brace}Sn{sub 4}Zn{r_brace} layers of Ca{sub 2}Zn{sub 3}Sn{sub 6}. - Graphical abstract: Crystal structures of the new Ae-Zn-Sn polar intermetallic phases SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6}. Highlights: Black-Right-Pointing-Pointer New polar intermetallic phases SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6}. Black-Right-Pointing-Pointer Obtained by high temperature reactions of the elements. Black-Right-Pointing-Pointer Single crystal XRD structure determination and DFT electronic structure calculations. Black-Right-Pointing-Pointer Closely related crystal and electronic structures. Black-Right-Pointing-Pointer Metallic conductivity coexisting with lone pairs and covalent bonding features.

  20. HD1: Design and Fabrication of a 16 Tesla Nb3Sn Dipole Magnet

    E-Print Network [OSTI]

    Hafalia, A.R.

    2011-01-01

    and Fabrication of a 16 Tesla Nb 3 Sn Dipole Magnet A .R.ge nerating fields above 16 Tesla in practical acceleratordesign fields above 10 Tesla. In a series of magnet tests,

  1. Diffusion in SiGe and Ge

    E-Print Network [OSTI]

    Liao, Christopher Yuan Ting

    2010-01-01

    Claeys, et al. , "Si versus Ge for future microelectronics,"in Selectively Doped Si/Si x Ge 1-x Superlattices," PhysicalA. Fitzgerald, et al. , "Relaxed Ge x Si 1-x structures for

  2. Performance Boundaries in Nb3Sn Superconductors

    E-Print Network [OSTI]

    Godeke, Arno

    2006-01-01

    Boundaries in Nb 3 Sn Superconductors – Berkeley, CABoundaries in Nb 3 Sn Superconductors – Berkeley, CABoundaries in Nb 3 Sn Superconductors Arno Godeke Berkeley,

  3. Thermal conductivity of bulk and nanowire Mg?SixSn1–x alloys from first principles

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Wu; Lindsay, L.; Broido, D. A.; Stewart, Derek A.; Mingo, Natalio

    2012-11-29

    The lattice thermal conductivity (?) of the thermoelectric materials, Mg?Si, Mg?Sn, and their alloys, are calculated for bulk and nanowires, without adjustable parameters. We find good agreement with bulk experimental results. For large nanowire diameters, size effects are stronger for the alloy than for the pure compounds. For example, in 200 nm diameter nanowires ? is lower than its bulk value by 30%, 20%, and 20% for Mg?Si?.?Sn?.?, Mg?Si, and Mg?Sn, respectively. For nanowires less than 20 nm thick, the relative decrease surpasses 50%, and it becomes larger in the pure compounds than in the alloy. At room temperature, ?more »of Mg?SixSn1–x is less sensitive to nanostructuring size effects than SixGe1–x, but more sensitive than PbTexSe1–x. This suggests that further improvement of Mg?SixSn1–x as a nontoxic thermoelectric may be possible.« less

  4. GE's Digital Marketplace to Revolutionize Manufacturing | GE...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    an open online space for companies to collaborate and transform how they design and manufacture their products in the future NISKAYUNA, NY, June 2, 2015 - GE (NYSE:GE), a leading...

  5. The low-temperature form of calcium gold stannide, CaAuSn

    SciTech Connect (OSTI)

    Lin, Qisheng; Corbett, John D.

    2014-07-19

    The EuAuGe-type CaAuSn phase has been synthesized and single-crystal X-ray diffraction analysis reveals that it has an ortho­rhom­bic symmetry (space group Imm2), with a = 4.5261 (7) Å, b = 7.1356 (11) Å and c = 7.8147 (11) Å. The structure features puckered layers that are connected by homoatomic Au-Au and Sn-Sn inter­layer bonds. This structure is one of the two parent structures of its high-temperature polymorph (ca 873 K), which is an inter­growth structure of the EuAuGe- and SrMgSi-type structures in a 2:3 ratio.

  6. CHEM 114 GE 124 MATH 110 GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2006-07 CHEM 114 GE 124 MATH 110 GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GE 210 MATH 223CE 212 CMPT 116 Hum/SocSci Jr. GEOE 218 CE 225 MATH 224GE 213# GE 348# CE 295 English 11x# CE 315 CE 311

  7. The evolution of the cosmic SN rate

    E-Print Network [OSTI]

    Enrico Cappellaro; Maria Teresa Botticella; Laura Greggio

    2007-06-09

    We briefly review the contribution of SN rate measurements to the debate on SN progenitor scenarios. We find that core collapse rates confirms the rapid evolution of the star formation rate with redshift. After accounting for the dispersion of SN Ia measurements and uncertainty of the star formation history, the standard scenarios for SN Ia progenitors appear consistent with all observational constraints.

  8. Thermal properties of UPdSn and UCuSn

    SciTech Connect (OSTI)

    Kawanaka, H. [Electrotechnical Lab., Tsukuba (Japan). Electron Physics Section; Nakotte, H. [Electrotechnical Lab., Tsukuba (Japan). Electron Physics Section]|[Los Alamos National Lab., NM (United States). Manual Lujan Jr. Neutron Scattering Center; Brueck, E.; Prokes, K.; Kim-Ngan, N.H. [Univ. of Amsterdam (Netherlands). Van der Waals-Zeeman Inst.; Takabatake, T.; Fujii, H. [Hiroshima Univ., Highashi-Hiroshima (Japan). Faculty of Integrated Arts and Sciences; Sakurai, J. [Toyama Univ. (Japan). Faculty of Science

    1996-09-01

    The authors report on the specific-heat and the thermopower of UPdSn and UCuSn, both of which order antiferromagnetically at low temperatures. Both compounds show similar behavior in the specific heat, and the large magnetic-entropy changes around T{sub N} are evidence for a large degree of 5f-electron localizations. The thermopower, on the other hand, behaves very different in the two compounds. While prominent features are seen in the temperature dependence of the thermopower of UCuSn, only weak changes are observed for UPdSn. This may indicate that, for these compounds, the thermopower response is due to mechanisms other than purely magnetic ones.

  9. CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 ME 227 GE 213# MATH 223 EE 201ME 214 CMPT 116 ME 215 GE 226 MATH 224 Hum/SocSci@# ME 251 ME 229 ME 318 ME 335 ME 313

  10. Structure and kinetics of Sn whisker growth on Pb-free solder finish

    E-Print Network [OSTI]

    2002-01-01

    especially the eutectic SnCu, a large number of Sn whiskersroom temperature on eutectic SnCu and pure Sn finishes. Bothfinish is typically eutectic SnCu or pure Sn. On the SnCu

  11. GE ?????????????????4G?????...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A die containing 400 ohmic MEMS switches, as viewed under a microscope, atop a U.S. dime. This device, made with GE's...

  12. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 CMPT 116CHEM 250# MATH 223 EE 201 GE 213 Grp. A elective*CHE 223 Hum/SocSci Jr. MATH 224 English 11x CHE 220CHE 210 CHE

  13. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 CMPT 116CHEM 250# MATH 223 EE 201 GE 213 Grp. A elective*CHE 223 HSS@# MATH 224 English 11x CHE 220CHE 210 CHE 323 CHE

  14. GE Research and Development | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory of rare Kaonforsupernovae model (Journal About DOE ButtonFSO HomefeatureGE

  15. GE Global Research Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear Physics (NP)about aMunich, GermanyAbout GE

  16. GE Researcher Discusses Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear Physics (NP)aboutRio de Janeiro,theIsGE

  17. Low-energy enhancement in the \\gamma-ray strength functions of $^{73,74}$Ge

    E-Print Network [OSTI]

    Renstrøm, T; Utsumoniya, H; Schwengner, R; Goriely, S; Larsen, A C; Filipescu, D M; Gheorghe, I; Bernstein, L A; Bleuel, D L; Glodariu, T; Görgen, A; Guttormsen, M; Hagen, T W; Kheswa, B V; Lui, Y -W; Negi, D; Ruud, I E; Shima, T; Siem, S; Takahisa, K; Tesileanu, O; Tornyi, T G; Tveten, G M; Wiedeking, M

    2015-01-01

    The $\\gamma$-ray strength functions and level densities of $^{73,74}$Ge have been extracted up to the neutron separation energy S$_n$ from particle-$\\gamma$ coincidence data using the Oslo method. Moreover, the $\\gamma$-ray strength function of $^{74}$Ge above S$_n$ has been determined from photo-neutron measurements, hence these two experiments cover the range of E$_\\gamma \\approx$ 1-13 MeV for $^{74}$Ge. The obtained data show that both $^{73,74}$Ge display an increase in strength at low $\\gamma$ energies. The experimental $\\gamma$-ray strength functions are compared with $M1$ strength functions deduced from average $B(M1)$ values calculated within the shell model for a large number of transitions. The observed low-energy enhancements in $^{73,74}$Ge are adopted in the calculations of the $^{72,73}$Ge(n,$\\gamma$) cross sections, where there are no direct experimental data. Calculated reaction rates for more neutron-rich germanium isotopes are shown to be strongly dependent on the presence of the low-energy ...

  18. Low-energy enhancement in the ?-ray strength functions of $^{73,74}$Ge

    E-Print Network [OSTI]

    T. Renstrøm; H. -T. Nyhus; H. Utsumoniya; R. Schwengner; S. Goriely; A. C. Larsen; D. M. Filipescu; I. Gheorghe; L. A. Bernstein; D. L. Bleuel; T. Glodariu; A. Görgen; M. Guttormsen; T. W. Hagen; B. V. Kheswa; Y. -W . Lui; D. Negi; I. E. Ruud; T. Shima; S. Siem; K. Takahisa; O. Tesileanu; T. G. Tornyi; G. M. Tveten; M. Wiedeking

    2015-10-18

    The $\\gamma$-ray strength functions and level densities of $^{73,74}$Ge have been extracted up to the neutron separation energy S$_n$ from particle-$\\gamma$ coincidence data using the Oslo method. Moreover, the $\\gamma$-ray strength function of $^{74}$Ge above S$_n$ has been determined from photo-neutron measurements, hence these two experiments cover the range of E$_\\gamma \\approx$ 1-13 MeV for $^{74}$Ge. The obtained data show that both $^{73,74}$Ge display an increase in strength at low $\\gamma$ energies. The experimental $\\gamma$-ray strength functions are compared with $M1$ strength functions deduced from average $B(M1)$ values calculated within the shell model for a large number of transitions. The observed low-energy enhancements in $^{73,74}$Ge are adopted in the calculations of the $^{72,73}$Ge(n,$\\gamma$) cross sections, where there are no direct experimental data. Calculated reaction rates for more neutron-rich germanium isotopes are shown to be strongly dependent on the presence of the low-energy enhancement.

  19. Effect of mixed Ge/Si cross-linking on the physical properties of amorphous Ge-Si-Te networks

    SciTech Connect (OSTI)

    Gunasekera, K.; Boolchand, P. [School of Electronics and Computing Systems, College of Engineering and Applied Science, University of Cincinnati, Cincinnati, Ohio 45221-0030 (United States); Micoulaut, M., E-mail: mmi@lptl.jussieu.fr [Laboratoire de Physique Théorique de la Matière Condensée, Université Pierre et Marie Curie, 4 Place Jussieu, F-75252 Paris Cedex 05 (France)

    2014-04-28

    Amorphous Ge{sub x}Si{sub x}Te{sub 1?2x} glasses are studied as a function of composition by a combination of experimental and theoretical methods, allowing for a full description of the network structure in relationship with physico-chemical properties. Calorimetric and thermal measurements reveal that such glasses display an anomalous behavior across a range of compositions x{sub c1}=7.5% and Ge, Si) are increased. The structural manifestation of these anomalies is understood from ?{sup 119}Sn Mössbauer spectroscopy and First Principles Molecular Dynamics at selected compositions (Ge{sub 20}Te{sub 80}, Si{sub 20}Te{sub 80}, and Ge{sub 10}Si{sub 10}Te{sub 80}). The numerical models reveal the quite different roles played by the modifier or network cross-linker Ge or Si atoms, Si being more tetrahedral in sp{sup 3} geometry, whereas Mössbauer spectroscopy shows that the nature of chemical bonding is dramatically changed around x??8%. The precise evolution of the local structure and chemical bonding ultimately allows understanding the origin of the intermediate phase in these complex tellurides.

  20. Thermoelectric properties of nanoporous Ge

    E-Print Network [OSTI]

    Lee, Joo-Hyoung

    We computed thermoelectric properties of nanoporous Ge (np-Ge) with aligned pores along the [001] direction through a combined classical molecular dynamics and first-principles electronic structure approach. A significant ...

  1. GE Anna Heijbel / The Storm

    E-Print Network [OSTI]

    Tian, Weidong

    1 / GE Anna Heijbel / The Storm® Confocal Optics 50, 100, 200 µm 5 IQTL · ·DNA ·DNA Gels, blots, tissue sections (not in situ), radio-TLC & X-Ray diffraction #12;2 / GE Anna Heijbel / Phosphor µm 1010 43 x 35 cm43 x 35 cm Scanning Technology #12;3 / GE Anna Heijbel / Confocal Optics PMTPMT

  2. CTu2J.4.pdf CLEO Technical Digest OSA 2012 Selective-Area Growth of Ge and Ge/SiGe Quantum Wells

    E-Print Network [OSTI]

    Miller, David A. B.

    CTu2J.4.pdf CLEO Technical Digest © OSA 2012 Selective-Area Growth of Ge and Ge/SiGe Quantum Wells process for growing high-quality bulk Ge and Ge/SiGe quantum wells in selected areas of 3 µm thick silicon. Introduction and motivation Ge and especially Ge/SiGe quantum wells exhibit strong electroabsorption (Franz

  3. GE Partners on Microgrid Project | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    control platform which can be used to host intelligent grid management software for microgrids. A typical GE control platform which can be used to host intelligent grid management...

  4. GE Develops High Water Recovery Technology in China | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    purification industry SHANGHAI, September. 17, 2015 - A team of scientists led by the Coating and Membrane Technology Laboratory at GE's China Technology Center have successfully...

  5. GE Healthcare Product Guide 2007

    E-Print Network [OSTI]

    Lebendiker, Mario

    GE Healthcare BioProcess Product Guide 2007 #12;How to contact us Europe www.gehealthcare.com/bioprocess or by phone (T), fax (F), and Email Austria T: +43 1 57 606 1613 F: +43 1 57 606 1614 Email: cust.orderde@ge.com Belgium T: 0800 73890 F: 02 416 8206 Email: order.bnl@ge.com Central and East Europe (Austria) T: +43 1

  6. Magnetic Refrigeration | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and it will become hotter. Move it away (demagnetization) and the food cools down. GE researchers predict the cooling refrigerators could reduce energy consumption by 20%, in...

  7. Flexible Energy | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (Opens in new window) Flexible Fuel Solutions Offer Efficient, Reliable Energy The world of power generation is evolving at lightning speed. GE is focused on staying one step...

  8. GE Energy Management Ancillary Services

    E-Print Network [OSTI]

    GE Energy Management Ancillary Services Definitions and Capability Study Part 2, Tasks 3-4, Final Online Wind Plants & Frequency Responsive Load Reserves

  9. Isospin Diffusion and Equilibration for Sn+Sn collisions at E/A=35 MeV

    E-Print Network [OSTI]

    Z. Y. Sun; M. B. Tsang; W. G. Lynch; G. Verde; F. Amorini; L. Andronenko; M. Andronenko; G. Cardella; M. Chatterje; P. Danielewicz; E. De Filippo; P. Dinh; E. Galichet; E. Geraci; H. Hua; E. La Guidara; G. Lanzalone; H. Liu; F. Lu; S. Lukyanov; C. Maiolino; A. Pagano; S. Piantelli; M. Papa; S. Pirrone; G. Politi; F. Porto; F. Rizzo; P. Russotto; D. Santonocito; Y. X. Zhang

    2010-10-13

    Equilibration and equilibration rates have been measured by colliding Sn nuclei with different isospin asymmetries at beam energies of E/A=35 MeV. Using the yields of mirror nuclei of 7Li and 7Be, we have studied the diffusion of isospin asymmetry by combining data from asymmetric 112Sn+124Sn and 124Sn+112Sn collisions with that from symmetric 112Sn+112Sn and 124Sn+124Sn collisions. We use these measurements to probe isospin equilibration in central collisions where nucleon-nucleon collisions are strongly blocked by the Pauli exclusion principal. The results are consistent with transport theoretical calculations that predict a degree of transparency in these collisions, but inconsistent with the emission of intermediate mass fragments by a single chemically equilibrated source. Comparisons with ImQMD calculations are consistent with results obtained at higher incident energies that provide constraints on the density dependence of the symmetry energy.

  10. Ferromagnetism of Fe3Sn and Alloys

    SciTech Connect (OSTI)

    Sales, Brian C [ORNL; Saparov, Bayrammurad I [ORNL; McGuire, Michael A [ORNL; Singh, David J [ORNL; Parker, David S [ORNL

    2014-01-01

    Hexagonal Fe3Sn has many of the desirable properties for a new permanent magnet phase with a Curie temperature of 725 K, a saturation moment of 1.18 MA/m. and anisotropy energy, K1 of 1.8 MJ/m3. However, contrary to earlier experimental reports, we found both experimentally and theoretically that the easy magnetic axis lies in the hexagonal plane, which is undesirable for a permanent magnet material. One possibility for changing the easy axis direction is through alloying. We used first principles calculations to investigate the effect of elemental substitutions. The calculations showed that substitution on the Sn site has the potential to switch the easy axis direction. However, transition metal substitutions with Co or Mn do not have this effect. We attempted synthesis of a number of these alloys and found results in accord with the theoretical predictions for those that were formed. However, the alloys that could be readily made all showed an in-plane easy axis. The electronic structure of Fe3Sn is reported, as are some are magnetic and structural properties for the Fe3Sn2 , and Fe5Sn3 compounds, which could be prepared as mm-sized single crystals.

  11. Low-voltage broad-band electroabsorption from thin Ge/SiGe

    E-Print Network [OSTI]

    Miller, David A. B.

    Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using

  12. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    GE 449# GE 110 Geological Engineering CE 271 GEOE 378 4TH YEAR 3RD YEAR 2ND YEAR 1ST YEAR or PHYS 128

  13. SN 2006bt: A PERPLEXING, TROUBLESOME, AND POSSIBLY MISLEADING...

    Office of Scientific and Technical Information (OSTI)

    in cosmological analyses. We generate mock SN Ia data sets which indicate that contamination by similar objects will both increase the scatter of a SN Ia Hubble diagram and...

  14. Electronic Structure, Oxidation State of Sn, and Chemical Stability of Photovoltaic Perovskite Variant Cs2SnI6

    E-Print Network [OSTI]

    Xiao, Zewen; Zhang, Xiao; Zhou, Yuanyuan; Hosono, Hideo; Kamiya, Toshio

    2015-01-01

    Cs2SnI6, a variant of perovskite CsSnI3, is expected for a photovoltaic material. Based on a simple ionic model, it is expected that Cs2SnI6 is composed of Cs+, I-, and Sn4+ ions and that the band gap is primarily made of occupied I- 5p6 valence band maximum (VBM) and unoccupied Sn4+ 5s conduction band minimum (CBM) similar to SnO2. In this work, we performed density functional theory (DFT) calculations and revealed that the real charge state of the Sn ion in this compound is +2 similar to CsSnI3. This is due to strong covalent nature between the I ion and the Sn ion, the VBM consists of I 5p - I 5p antibonding states, and the CBM of I 5p - Sn 5s antibonding states. The +2 oxidation state of Sn is realized by the apparent charge state of I-2/3, because the I 5p - Sn 5s antibonding states form the unoccupied CBM and apparently 1/18 of the I 5p orbitals are unoccupied. These results are further supported by comparing chemical bonding analyses with those of related compounds. The chemical stability of the Cs2SnI...

  15. Miniaturized Turbine Offers Desalination Solution | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    salt from ice New solution draws from the GE Store, integrating GE's experience with steam turbine, oil & gas compressors, 3D printing and water processing NISKAYUNA, NY,...

  16. Energy Frontier Research Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    include GE Global Research, Yale University-Crabtree Group, Yale University-Batista Group, Stanford University and Lawrence Berkeley National Laboratory. GE Global...

  17. Instabilities and Mixing in SN 1993J

    E-Print Network [OSTI]

    K. Iwamoto; T. R. Young; N. Nakasato; T. Shigeyama; K. Nomoto; I. Hachisu; H. Saio

    1997-01-15

    Rayleigh-Taylor (R-T) instabilities in the explosion of SN 1993J are investigated by means of two-dimensional hydrodynamical simulations. It is found that the extent of mixing is sensitive to the progenitor's core mass and the envelope mass. Because the helium core mass (3 - 4 \\ms) is smaller than that of SN 1987A, R-T instabilities at the He/C+O interfaces develop to induce a large scale mixing in the helium core, while the instability is relatively weak at the H/He interface due to the small envelope mass. The predicted abundance distribution, in particular the amount of the \

  18. Edison Summit Brings GE Leaders Together | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    We are ONE Edison Aisha Yousuf 2014.03.21 "We are ONE Edison" was the theme of the first GE Global Edison Summit held February 16-18, 2014 at Coronado Springs Resort in Orlando,...

  19. GE Researcher Explores Science Behind Movie Chappie | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  20. Materials Data on Li2SnGe (SG:216) by Materials Project

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Kristin Persson

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  1. ON THE PROGENITOR AND SUPERNOVA OF THE SN 2002cx-LIKE SUPERNOVA 2008ge ,

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTech Connect Nanomechanical switchFlue Gasinelastic scattering at low(Journal(Journal

  2. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2005-2006 CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GEOL 245 MATH 223 CE 328 CE 212 CE 225 CE 295GE 213# MATH 224 GEOL 224 GEOE 218 GEOL 258 BusSci/HSS# GEOE 315 GEOE

  3. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2006-07 CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GEOL 245 MATH 223 CE 328 CE 212 CE 225 CE 295GE 213# MATH 224 GEOL 224 GEOE 218 GEOL 258 Hum/SocSci Jr. GEOE 315

  4. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Predictivity(tm) Industrial Internet Solutions Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window)...

  5. High energy octupole resonance in Sn-116 

    E-Print Network [OSTI]

    Clark, HL; Youngblood, David H.; Lui, YW.

    1996-01-01

    The region of excitation energy from 7 less than or equal to E(x) less than or equal to 38 MeV in Sn-116 was studied with inelastic scattering of 240 MeV alpha particles. Parameters obtained for the isoscalar giant monopole resonance...

  6. Fusion of radioactive $^{132}$Sn with $^{64}$Ni

    E-Print Network [OSTI]

    J. F. Liang; D. Shapira; J. R. Beene; C. J. Gross; R. L. Varner; A. Galindo-Uribarri; J. Gomez del Campo; P. A. Hausladen; P. E. Mueller; D. W. Stracener; H. Amro; J. J. Kolata; J. D. Bierman; A. L. Caraley; K. L. Jones; Y. Larochelle; W. Loveland; D. Peterson

    2007-04-05

    Evaporation residue and fission cross sections of radioactive $^{132}$Sn on $^{64}$Ni were measured near the Coulomb barrier. A large sub-barrier fusion enhancement was observed. Coupled-channel calculations including inelastic excitation of the projectile and target, and neutron transfer are in good agreement with the measured fusion excitation function. When the change in nuclear size and shift in barrier height are accounted for, there is no extra fusion enhancement in $^{132}$Sn+$^{64}$Ni with respect to stable Sn+$^{64}$Ni. A systematic comparison of evaporation residue cross sections for the fusion of even $^{112-124}$Sn and $^{132}$Sn with $^{64}$Ni is presented.

  7. Recommended GE Curriculum for the BSEE Majors

    E-Print Network [OSTI]

    Ravikumar, B.

    Recommended GE Curriculum for the BSEE Majors Area Subjects Suggested GE Courses Courses Actual units GE Units A. Communication and Critical Thinking (9) A.2. Fund. of Communication ENGL 101 4 4 A.3, Theatre, Dance and Music and Film Select from the GE C.1 list in the SSU Catalog 3 3 C.2. Literature

  8. HSE 1 HSE 2 HSE 3 GE 1 GE 2 GE 3 Residual effects of Large Vessels in GE BOLD Differential Mapping of Ocular Dominance Columns

    E-Print Network [OSTI]

    HSE 1 HSE 2 HSE 3 GE 1 GE 2 GE 3 Residual effects of Large Vessels in GE BOLD Differential Mapping the contamination of non-specific large vessel signals. Animal studies have used non- conventional functional minimizing the contributions of extravascular BOLD signals around large vessels due to the refocusing pulse

  9. Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques

    E-Print Network [OSTI]

    Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques Gianni was arranged by Prof. C.K. Maiti Abstract Techniques for fabricating strained Si, SiGe, and Ge on-insulator include SIMOX, Ge condensation and wafer bonding. In this paper, a brief introduction of each method

  10. GeSi intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia)

    E-Print Network [OSTI]

    Ge­Si intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia) Laboratori December 1999 Exploiting Ge K-edge x-ray absorption spectroscopy we provide direct evidence of Si­Ge intermixing in self-organized strained and unstrained Ge quantum dots on Si, and provide a quantitative

  11. Nonlithographic epitaxial SnxGe1x dense nanowire arrays grown on Ge,,001...

    E-Print Network [OSTI]

    Atwater, Harry

    Nonlithographic epitaxial SnxGe1Àx dense nanowire arrays grown on Ge,,001... Regina Ragan-thick SnxGe1 x /Ge(001) epitaxial films with 0 x 0.085 by molecular-beam epitaxy. These films evolve during growth into a dense array of SnxGe1 x nanowires oriented along 001 , as confirmed by composition contrast

  12. VERY LATE PHOTOMETRY OF SN 2011fe

    SciTech Connect (OSTI)

    Kerzendorf, W. E. [Department of Astronomy and Astrophysics, University of Toronto, 50 Saint George Street, Toronto, ON M5S 3H4 (Canada); Taubenberger, S.; Seitenzahl, I. R.; Ruiter, A. J., E-mail: wkerzendorf@gmail.com [Max-Planck-Institut für Astrophysik, Karl-Schwarzschild-Straße 1, D-85748 Garching (Germany)

    2014-12-01

    The Type Ia supernova SN 2011fe is one of the closest supernovae of the past decades. Due to its proximity and low dust extinction, this object provides a very rare opportunity to study the extremely late time evolution (>900 days) of thermonuclear supernovae. In this Letter, we present our photometric data of SN 2011fe taken at an unprecedented late epoch of ?930 days with GMOS-N mounted on the Gemini North telescope (g = 23.43 ± 0.28, r = 24.14 ± 0.14, i = 23.91 ± 0.18, and z = 23.90 ± 0.17) to study the energy production and retention in the ejecta of SN 2011fe. Together with previous measurements by other groups, our result suggests that the optical supernova light curve can still be explained by the full thermalization of the decay positrons of {sup 56}Co. This is in spite of theoretical predicted effects (e.g., infrared catastrophe, positron escape, and dust) that advocate a substantial energy redistribution and/or loss via various processes that result in a more rapid dimming at these very late epochs.

  13. Elastic {alpha} scattering on {sup 112}Sn and {sup 124}Sn at astrophysically relevant energies

    SciTech Connect (OSTI)

    Galaviz, D.; Mohr, P.; Zilges, A. [Institut fuer Kernphysik, Technische Universitaet Darmstadt, Schlossgartenstrasse 9, D-64289 Darmstadt (Germany); Fueloep, Zs.; Gyuerky, Gy.; Mate, Z.; Somorjai, E. [ATOMKI, P.O. Box 51, H-4001 Debrecen (Hungary); Rauscher, T. [Departement fuer Physik und Astronomie, Universitaet Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)

    2005-06-01

    The cross sections for the elastic scattering reactions {sup 112,124}Sn({alpha},{alpha}){sup 112,124}Sn at energies above and below the Coulomb barrier are presented and compared to predictions for global {alpha}-nucleus potentials. The high precision of the new data allows a study of the global {alpha}-nucleus potentials at both the proton- and neutron-rich sides of an isotopic chain. In addition, local {alpha}-nucleus potentials have been extracted for both nuclei and used to reproduce elastic scattering data at higher energies. Predictions from the capture cross section of the reaction {sup 112}Sn({alpha},{gamma}){sup 116}Te at astrophysically relevant energies are presented and compared to experimental data.

  14. Elastic alpha-scattering of 112Sn and 124Sn at astrophysically relevant energies

    E-Print Network [OSTI]

    D. Galaviz; Zs. Fulop; Gy. Gyurky; Z. Mate; P. Mohr; T. Rauscher; E. Somorjai; A. Zilges

    2005-05-27

    The cross sections for the elastic scattering reactions {112,124}Sn(a,a){112,124}Sn at energies above and below the Coulomb barrier are presented and compared to predictions for global alpha-nucleus potentials. The high precision of the new data allows a study of the global alpha-nucleus potentials at both the proton and neutron-rich sides of an isotopic chain. In addition, local alpha-nucleus potentials have been extracted for both nuclei, and used to reproduce elastic scattering data at higher energies. Predictions from the capture cross section of the reaction 112Sn(a,g)116Te at astrophysically relevant energies are presented and compared to experimental data.

  15. Intermediate-energy Coulomb excitation of 104Sn: Moderate E2 strength decrease approaching 100Sn

    E-Print Network [OSTI]

    P. Doornenbal; S. Takeuchi; N. Aoi; M. Matsushita; A. Obertelli; D. Steppenbeck; H. Wang; L. Audirac; H. Baba; P. Bednarczyk; S. Boissinot; M. Ciemala; A. Corsi; T. Furumoto; T. Isobe; A. Jungclaus; V. Lapoux; J. Lee; K. Matsui; T. Motobayashi; D. Nishimura; S. Ota; E. C. Pollacco; H. Sakurai; C. Santamaria; Y. Shiga; D. Sohler; R. Taniuchi

    2013-05-13

    The reduced transition probability B(E2) of the first excited 2+ state in the nucleus 104Sn was measured via Coulomb excitation in inverse kinematics at intermediate energies. A value of 0.163(26) e^2b^2 was extracted from the absolute cross-section on a Pb target, while the method itself was verified with the stable 112Sn isotope. Our result deviates significantly from the earlier reported value of 0.10(4) e^2b^2 and corresponds to a moderate decrease of excitation strength relative to the almost constant values observed in the proton-rich, even-A 106-114Sn isotopes. Present state-of-the-art shell-model predictions, which include proton and neutron excitations across the N=Z=50 shell closures as well as standard polarization charges, underestimate the experimental findings

  16. Giant resonances in Sn-112 and Sn-124: Isotopic dependence of monopole resonance energies 

    E-Print Network [OSTI]

    Lui, YW; Youngblood, David H.; Tokimoto, Y.; Clark, HL; John, B.

    2004-01-01

    The giant resonance region from 10 MeV Sn-112 and Sn-124 has been studied with inelastic scattering of 240 MeV ? particles at small angles including 0andDEG.... Essentially, all of the expected isoscalar E0-E3 strength was located in both nuclei. The isotopic dependence of the giant monopole resonance energies was found to be consistent with relativistic and nonrelativistic calculations for interactions with K-NM andSIM...220-240 MeV....

  17. CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    ND YEAR 1ST YEAR 3RD YEAR # These courses can be taken in either term.*must meet specific Hum/SocSci@# Bus Sci/HSS#Design Elec.#* T.E.*# T.E.*#GE 449# ME 314 or PHYS 128 or GEOL 121 4TH YEAR 2

  18. GE Energy Management Ancillary Services

    E-Print Network [OSTI]

    GE Energy Management Ancillary Services Definitions and Capability Study Part 1, Tasks 1-2, FinalRose Michael O'Connor Sundar Venkataraman Revision 1 Date: 12/19/2012 #12;Ancillary Services Definitions.................................................................................................................... 7 3.1 Task 1: Identify and define ancillary services needed for integration of new generation

  19. Process for the manufacture of 117Sn diethylenetriaminepentaacetic acids

    DOE Patents [OSTI]

    Srivastava, Suresh C. (Setauket, NY); Li, Zizhong (Upton, NY); Meinken, George (Middle Island, NY)

    2003-01-01

    Novel methods are provided for the manufacture of .sup.117m Sn(Sn.sup.4+) DTPA. The method allows the use of DTPA, a toxic chelating agent, in an approximately 1:1 ratio to .sup.117m Sn(Sn.sup.4+) via either aqueous conditions, or using various organic solvents, such as methylene chloride. A pharmaceutical composition manufactured by the novel method is also provided, as well as methods for treatment of bone tumors and pain associated with bone cancer using the pharmaceutical composition of the invention.

  20. Anomalous pairing vibration in neutron-rich Sn isotopes beyond the N=82 magic number

    E-Print Network [OSTI]

    Hirotaka Shimoyama; Masayuki Matsuo

    2011-06-09

    Two-neutron transfer associated with the pair correlation in superfluid neutron-rich nuclei is studied with focus on low-lying $0^+$ states in Sn isotopes beyond the N=82 magic number. We describe microscopically the two-neutron addition and removal transitions by means of the Skyrme-Hartree-Fock-Bogoliubov mean-field model and the continuum quasiparticle random phase approximation formulated in the coordinate space representation. It is found that the pair transfer strength for the transitions between the ground states becomes significantly large for the isotopes with $A \\ge 140$, reflecting very small neutron separation energy and long tails of the weakly bound $3p$ orbits. In $^{132-140}$Sn, a peculiar feature of the pair transfer is seen in transitions to low-lying excited $0^+$ states. They can be regarded as a novel kind of pair vibrational mode which is characterized by an anomalously long tail of the transition density extending to far outside of the nuclear surface, and a large strength comparable to that of the ground-state transitions. The presence of the weakly bound neutron orbits plays a central role for these anomalous behaviors.

  1. First detection of VHE gamma-rays from SN 1006 by H.E.S.S

    E-Print Network [OSTI]

    Acero, F; Akhperjanian, A G; Anton, G; de Almeida, U Barres; Bazer-Bachi, A R; Becherini, Y; Behera, B; Beilicke, M; Bernlöhr, K; Bochow, A; Boisson, C; Bolmont, J; Borrel, V; Brucker, J; Brun, F; Brun, P; Bühler, R; Bulik, T; Büsching, I; Boutelier, T; Chadwick, P M; Charbonnier, A; Chaves, R C G; Cheesebrough, A; Conrad, J; Chounet, L -M; Clapson, A C; Coignet, G; Dalton, M; Daniel, M K; Davids, I D; Degrange, B; Deil, C; Dickinson, H J; Djannati-Ataï, A; Domainko, W; Drury, L O'C; Dubois, F; Dubus, G; Dyks, J; Dyrda, M; Egberts, K; Eger, P; Espigat, P; Fallon, L; Farnier, C; Fegan, S; Feinstein, F; Fiasson, A; Förster, A; Fontaine, G; Füßling, M; Gabici, S; Gallant, Y A; Gérard, L; Gerbig, D; Giebels, B; Glicenstein, J F; Glück, B; Goret, P; Göring, D; Hauser, D; Hauser, M; Heinz, S; Heinzelmann, G; Henri, G; Hermann, G; Hinton, J A; Hoffmann, A; Hofmann, W; Hofverberg, P; Holleran, M; Hoppe, S; Horns, D; Jacholkowska, A; de Jager, O C; Jahn, C; Jung, I; Katarzy'nski, K; Katz, U; Kaufmann, S; Kerschhaggl, M; Khangulyan, D; Khélifi, B; Keogh, D; Klochkov, D; Klu'zniak, W; Kneiske, T; Komin, Nu; Kosack, K; Kossakowski, R; Lamanna, G; Lemoine-Goumard, M; Lenain, J -P; Lohse, T; Marandon, V; Marcowith, A; Masbou, J; Maurin, D; McComb, T J L; Medina, M C; Méhault, J; Moulin, E; Naumann-Godo, M; de Naurois, M; Nedbal, D; Nekrassov, D; Nicholas, B; Niemiec, J; Nolan, S J; Ohm, S; Olive, J-F; Orford, E de Ona Wilhelmi K J; Ostrowski, M; Panter, M; Pedaletti, M Paz Arribas G; Pelletier, G; Petrucci, P -O; Pita, S; Pühlhofer, 12 G; Punch, M; Quirrenbach, A; Raubenheimer, B C; Raue, M; Rayner, S M; Reimer, O; Renaud, M; Reyes, R de los; Rieger, F; Ripken, J; Rob, L; Rosier-Lees, S; Rowell, G; Rudak, B; Rulten, C B; Ruppel, J; Ryde, F; Sahakian, V; Santangelo, A; Schlickeiser, R; Schöck, F M; Schönwald, A; Schwanke, U; Schwarzburg, S; Schwemmer, S; Shalchi, A; Sushch, I; Sikora, M; Skilton, J L; Sol, H; Stawarz, ?; Steenkamp, R; Stegmann, C; Stinzing, F; Superina, G; Szostek, A; Tam, P H; Tavernet, J -P; Terrier, R; Tibolla, O; Tluczykont, M; van Eldik, C; Vasileiadis, G; Venter, C; Venter, L; Vialle, J P; Vincent, P; Vink, J; Vivier, M; Völk, H J; Volpe, F; Vorobiov, S; Wagner, S J; Ward, M; Zdziarski, A A; Zech, A

    2010-01-01

    Recent theoretical predictions of the lowest very high energy (VHE) luminosity of SN 1006 are only a factor 5 below the previously published H.E.S.S. upper limit, thus motivating further in-depth observations of this source. Deep observations at VHE energies (above 100 GeV) were carried out with the High Energy Stereoscopic System (H.E.S.S.) of Cherenkov Telescopes from 2003 to 2008. More than 100 hours of data have been collected and subjected to an improved analysis procedure. Observations resulted in the detection of VHE gamma-rays from SN 1006. The measured gamma-ray spectrum is compatible with a power-law, the flux is of the order of 1% of that detected from the Crab Nebula, and is thus consistent with the previously established H.E.S.S. upper limit. The source exhibits a bipolar morphology, which is strongly correlated with non-thermal X-rays. Because the thickness of the VHE-shell is compatible with emission from a thin rim, particle acceleration in shock waves is likely to be the origin of the gamma-r...

  2. PROBABILITY OF CORRECT SELECTION OF GAMMA VERSUS GE OR WEIBULL VERSUS GE BASED ON

    E-Print Network [OSTI]

    Kundu, Debasis

    PROBABILITY OF CORRECT SELECTION OF GAMMA VERSUS GE OR WEIBULL VERSUS GE BASED ON LIKELIHOOD RATIO proposes the use of likelihood ratio statistic in choosing between gamma and GE models or between Weibull and GE models. Probability of correct selec- tions are obtained using Monte Carlo simulations for various

  3. Giant-Resonances in Sn-112 

    E-Print Network [OSTI]

    Lui, YW; Bogucki, P.; Bronson, J. D.; Youngblood, David H.; Garg, U.

    1984-01-01

    VOLUME 30, NUMBER 1 Giant resonances in "2Sn JULY 1984 Y.-W. Lui, P. Bogucki, J. D. Bronson, and D. H. Youngblood Cyclotron Institute, Texas AckM University, College Station, Texas 77843 U. Garg Physics Department, University ofNotre Dame, Notre... weighted sum rule (EWSR). The high-excitation component is reasonably described by a monopole calculation exhausting 166+60% of the EO 30 51 Qc1984 The American Physical Society LUI, BOGUCKI, BRONSON, YOUNGBLOOD, AND GARG EWSR. The uncertainties...

  4. 136Sn and three body forces

    E-Print Network [OSTI]

    M. Saha Sarkar; S. Sarkar

    2014-11-10

    New experimental data on 2+ energies of 136,138Sn confirms the trend of lower 2+ excitation energies of even-even tin isotopes with N > 82 compared to those with N 4+)) of these nuclei, simultaneously, apart from one whose matrix elements have been changed empirically to produce mixed seniority states by weakening pairing. We have shown that the experimental result also shows good agreement with the theory in which three body forces have been included in a realistic interaction. The new theoretical results on transition probabilities have been discussed to identify the experimental quantities which will clearly distinguish between different views.

  5. SN Power Brasil | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to:Newberg,EnergyEastCarbon Development |SMC Co Ltd Jump to:SN Power

  6. Understanding and engineering of NiGe/Ge junction formed by phosphorus ion implantation after germanidation

    SciTech Connect (OSTI)

    Oka, Hiroshi, E-mail: oka@asf.mls.eng.osaka-u.ac.jp; Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji [Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2014-08-11

    Modulation of the effective electron Schottky barrier height (eSBH) of NiGe/Ge contacts induced by phosphorus ion implantation after germanide formation was investigated by considering local inhomogeneity in the eSBH. Systematic studies of NiGe/Ge contact devices having various germanide thicknesses and ion implantation areas indicated the threshold dopant concentration at the NiGe/Ge interface required for eSBH modulation and negligible dopant diffusion even at NiGe/Ge interface during drive-in annealing, leading to variation in the eSBH between the bottom and sidewall portions of the NiGe regions. Consequently, this method makes it possible to design source/drain contacts with low-resistivity Ohmic and ideal rectifying characteristics for future Ge-based transistors.

  7. Performance analysis of HD1: a 16 Tesla Nb3Sn dipole Magnet

    E-Print Network [OSTI]

    Mattafirri, S.

    2009-01-01

    Analysis of HD1: A 16 Tesla Nb 3 Sn Dipole Magnet S.of HD1b, an Upgraded 16 Tesla Nb 3 Sn Dipole Magnet”, This

  8. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    Engineering * must meet specific requirements # These courses can be taken in either term. 2ND YEAR 3RD YEAR 4 431 Last editted Apr 4, 2006 ^offered in alternate years; take in either 3rd or 4th year CHEM 242TH YEAR 1ST YEAR CHE 422 CHE 232 HSS@# 2005-2006 or PHYS 128 or GEOL 121 or AB E 312 GE 300# CHE 332

  9. Field quality study in Nb(3)Sn accelerator magnets

    SciTech Connect (OSTI)

    Kashikhin, V.V.; Ambrosio, G.; Andreev, N.; Barzi, E.; Bossert, R.; DiMarco, J.; Kashikhin, V.S.; Lamm, M.; Novitski, I.; Schlabach, P.; Velev, G.; Yamada, R.; Zlobin, A.V.; /Fermilab

    2005-05-01

    Four nearly identical Nb{sub 3}Sn dipole models of the same design were built and tested at Fermilab. It provided a unique opportunity of systematic study the field quality effects in Nb{sub 3}Sn accelerator magnets. The results of these studies are reported in the paper.

  10. Communication: Nanosize-induced restructuring of Sn nanoparticles

    SciTech Connect (OSTI)

    Sabet, Sareh; Kaghazchi, Payam

    2014-05-21

    Stabilities and structures of ?- and ?-Sn nanoparticles are studied using density functional theory. Results show that ?-Sn nanoparticles are more stable. For both phases of Sn, nanoparticles smaller than 1 nm (?48 atoms) are amorphous and have a band gap between 0.4 and 0.7 eV. The formation of band gap is found to be due to amorphization. By increasing the size of Sn nanoparticles (1–2.4 nm), the degree of crystallization increases and the band gap decreases. In these cases, structures of the core of nanoparticles are bulk-like, but structures of surfaces on the faces undergo reconstruction. This study suggests a strong size dependence of electronic and atomic structures for Sn nanoparticle anodes in Li-ion batteries.

  11. ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224

    E-Print Network [OSTI]

    Saskatchewan, University of

    GE 120 ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224 ABE 295 ABE 212 can be taken in either term. GE 124 MATH 110 MATH 124CHEM 115 PHYS 155 3RD YEAR GE 125 GE 110 COMM 102

  12. Purdue, GE Collaborate On Advanced Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeedingProgramExemptionsProteinTotal natural gasPurchase, Delivery,Purdue, GE to

  13. About GE Global Research Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory of raregovAboutRecovery Act Recovery ActARM OverviewAbout GE Global Research

  14. GE Scientists Experiment With Texas BBQ | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverse (Journal Article)Forthcoming UpgradesArea:Benefits ofofStackOn thePower ofGE

  15. A panchromatic view of the restless SN 2009ip reveals the explosive ejection of a massive star envelope

    SciTech Connect (OSTI)

    Margutti, R.; Milisavljevic, D.; Soderberg, A. M.; Chornock, R.; Zauderer, B. A.; Sanders, N. E.; Berger, E. [Harvard-Smithsonian Center for Astrophysics, 60 Garden St., Cambridge, MA 02138 (United States); Murase, K. [Institute for Advanced Study, Princeton, NJ 08540 (United States); Guidorzi, C. [Department of Physics, University of Ferrara, via Saragat 1, I-44122 Ferrara (Italy); Kuin, P. [University College London, MSSL, Holmbury St. Mary, Dorking, Surrey RH5 6NT (United Kingdom); Fransson, C. [Department of Astronomy and the Oskar Klein Centre, Stockholm University, AlbaNova, SE-106 91 Stockholm (Sweden); Levesque, E. M. [CASA, Department of Astrophysical and Planetary Sciences, University of Colorado, 389-UCB, Boulder, CO 80309 (United States); Chandra, P.; Challis, P. [National Centre for Radio Astrophysics, Tata Institute of Fundamental Research, Pune University Campus, Ganeshkhind, Pune 411007 (India); Bianco, F. B. [Center for Cosmology and Particle Physics, New York University, 4 Washington Place, New York, NY 10003 (United States); Brown, P. J. [George P. and Cynthia Woods Mitchell Institute for Fundamental Physics and Astronomy, Texas A. and M. University, Department of Physics and Astronomy, 4242 TAMU, College Station, TX 77843 (United States); Chatzopoulos, E. [Department of Astronomy, University of Texas at Austin, Austin, TX 78712-1205 (United States); Cheung, C. C. [Space Science Division, Naval Research Laboratory, Washington, DC 20375-5352 (United States); Choi, C. [CEOU/Department of Physics and Astronomy, Seoul National University, Seoul 151-742 (Korea, Republic of); Chomiuk, L. [National Radio Astronomy Observatory, P.O. Box O, Socorro, NM 87801 (United States); and others

    2014-01-01

    The double explosion of SN 2009ip in 2012 raises questions about our understanding of the late stages of massive star evolution. Here we present a comprehensive study of SN 2009ip during its remarkable rebrightenings. High-cadence photometric and spectroscopic observations from the GeV to the radio band obtained from a variety of ground-based and space facilities (including the Very Large Array, Swift, Fermi, Hubble Space Telescope, and XMM) constrain SN 2009ip to be a low energy (E ? 10{sup 50} erg for an ejecta mass ?0.5 M {sub ?}) and asymmetric explosion in a complex medium shaped by multiple eruptions of the restless progenitor star. Most of the energy is radiated as a result of the shock breaking out through a dense shell of material located at ?5 × 10{sup 14} cm with M ? 0.1 M {sub ?}, ejected by the precursor outburst ?40 days before the major explosion. We interpret the NIR excess of emission as signature of material located further out, the origin of which has to be connected with documented mass-loss episodes in the previous years. Our modeling predicts bright neutrino emission associated with the shock break-out if the cosmic-ray energy is comparable to the radiated energy. We connect this phenomenology with the explosive ejection of the outer layers of the massive progenitor star, which later interacted with material deposited in the surroundings by previous eruptions. Future observations will reveal if the massive luminous progenitor star survived. Irrespective of whether the explosion was terminal, SN 2009ip brought to light the existence of new channels for sustained episodic mass loss, the physical origin of which has yet to be identified.

  16. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

    SciTech Connect (OSTI)

    Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2011-07-15

    Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

  17. Chevron, GE form Technology Alliance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 OutreachProductswsicloudwsiclouddenDVA N C E D BGene NetworkNuclear SecurityChattanChemistry ofNanChevron, GE form

  18. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room News Publications Traditional Knowledge KiosksAboutHelp & Reference Users AdvAncedGE

  19. Synthesis of superconducting Nb3Sn coatings on Nb substrates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Barzi, E.; Franz, S.; Reginato, F.; Turrioni, D.; Bestetti, M.

    2015-12-01

    In the present work the electrochemical and thermal syntheses of superconductive Nb3Sn films are investigated. The Nb3Sn phase is obtained by electrodeposition of Sn layers and Cu intermediate layers onto Nb substrates followed by high temperature diffusion in inert atmosphere. Electrodeposition was performed from aqueous solutions at current densities in the 20 to 50 mA/cm2 range and at temperatures between 40 and 50°C. Subsequent thermal treatments were realized to obtain the Nb3Sn superconductive phase. Glow discharge optical emission spectrometry (GDOES) demonstrated that after thermal treatment interdiffusion of Nb and Sn occurred across a thickness of about 13 ?m. Scanning Electronmore »Microscopy (SEM) allowed accurately measuring the thickness of the Nb3Sn phase, whose average for the various types of film samples was between 5.7 and 8.0 ?m. X-ray diffraction (XRD) patterns confirmed the presence of a cubic Nb3Sn phase (A15 structure) having (210) preferred orientation. The maximum obtained Tc was 17.68 K and the Bc20 ranged between 22.5 T and 23.8 T. With the procedure described in the present paper, coating complex shapes cost-effectively becomes possible, which is typical of electrochemical techniques. Furthermore, this approach can be implemented in classical wire processes such as "Jelly Roll" or "Rod in Tube", or directly used for producing superconducting surfaces. In conclusion, the potential of this method for Superconducting Radiofrequency (SRF) structures is also outlined.« less

  20. In situ visualization of metallurgical reactions in nanoscale Cu/Sn diffusion couples

    SciTech Connect (OSTI)

    Yin, Qiyue [State Univ. of New York at Binghamton, Binghamton, NY (United States); Stach, Eric A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Gao, Fan [Univ. of Massachusetts, Lowell, MA (United States); Zhou, Guangwen [State Univ. of New York at Binghamton, Binghamton, NY (United States); Gu, Zhiyong [Univ. of Massachusetts, Lowell, MA (United States)

    2015-01-01

    The Cu–Sn metallurgical soldering reaction in two-segmented Cu–Sn nanowires is visualized by in-situ transmission electron microscopy. By varying the relative lengths of Cu and Sn segments, we show that the metallurgical reaction starts at ~ 200 ° with the formation of a Cu–Sn solid solution for the Sn/Cu length ratio smaller than 1:5 while the formation of Cu–Sn intermetallic compounds (IMCs) for larger Sn/Cu length ratios. Upon heating the nanowires up to ~ 500 °C, two phase transformation pathways occur, ?-Cu?Sn? ? ?-Cu?Sn ? ?-Cu??Sn?? for nanowires with a long Cu segment and ?-Cu?Sn? ? ?-Cu?Sn ? ?-Cu?Sn with a short Cu segment. The dynamic in situ TEM visualization of the evolution of Kirkendall voids demonstrates that Cu diffuses faster both in Sn and IMCs than that of Sn in Cu? and IMCs, which is the underlying cause of the dependence of the IMC formation and associated phase evolution on the relative lengths of the Cu and Sn segments.

  1. In situ visualization of metallurgical reactions in nanoscale Cu/Sn diffusion couples

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yin, Qiyue; Stach, Eric A.; Gao, Fan; Zhou, Guangwen; Gu, Zhiyong

    2015-02-10

    The Cu–Sn metallurgical soldering reaction in two-segmented Cu–Sn nanowires is visualized by in-situ transmission electron microscopy. By varying the relative lengths of Cu and Sn segments, we show that the metallurgical reaction starts at ~ 200 ° with the formation of a Cu–Sn solid solution for the Sn/Cu length ratio smaller than 1:5 while the formation of Cu–Sn intermetallic compounds (IMCs) for larger Sn/Cu length ratios. Upon heating the nanowires up to ~ 500 °C, two phase transformation pathways occur, ?-Cu?Sn? ? ?-Cu?Sn ? ?-Cu??Sn?? for nanowires with a long Cu segment and ?-Cu?Sn? ? ?-Cu?Sn ? ?-Cu?Sn with amore »short Cu segment. The dynamic in situ TEM visualization of the evolution of Kirkendall voids demonstrates that Cu diffuses faster both in Sn and IMCs than that of Sn in Cu? and IMCs, which is the underlying cause of the dependence of the IMC formation and associated phase evolution on the relative lengths of the Cu and Sn segments.« less

  2. GE Global Research in San Ramon, California

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Careers Leadership Programs What's new in San Ramon Ars Technica: Analyzing the Internet of Things GE Unveils High-Speed Network Infrastructure to Connect Machines, Data...

  3. MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels

    E-Print Network [OSTI]

    Fitzgerald, Eugene A.

    Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with ...

  4. Neutral pion production in Au plus Au collisions at root s(NN)=200 Ge

    E-Print Network [OSTI]

    Abelev, B. I.; Aggarwal, M. M.; Ahammed, Z.; Alakhverdyants, A. V.; Anderson, B. D.; Arkhipkin, D.; Averichev, G. S.; Balewski, J.; Barannikova, O.; Barnby, L. S.; Baudot, J.; Baumgart, S.; Beavis, D. R.; Bellwied, R.; Benedosso, F.; Betancourt, M. J.; Betts, R. R.; Bhasin, A.; Bhati, A. K.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Biritz, B.; Bland, L. C.; Bnzarov, I.; Bombara, M.; Bonner, B. E.; Bouchet, J.; Braidot, E.; Brandin, A. V.; Bruna, E.; Bueltmann, S.; Burton, T. P.; Bystersky, M.; Cai, X. Z.; Caines, H.; de la Barca Sanchez, M. Calderon; Catu, O.; Cebra, D.; Cendejas, R.; Cervantes, M. C.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H. F.; Chen, J. H.; Chen, J. Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Choi, K. E.; Christie, W.; Clarke, R. F.; Codrington, M. J. M.; Corliss, R.; Cormier, T. M.; Cosentino, M. R.; Cramer, J. G.; Crawford, H. J.; Das, D.; Dash, S.; Daugherity, M.; De Silva, L. C.; Dedovich, T. G.; DePhillips, M.; Derevschikov, A. A.; De Souza, R. Derradi; Didenko, L.; Djawotho, P.; Dogra, S. M.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Dunlop, J. C.; Mazumdar, M. R. Dutta; Efimov, L. G.; Elhalhuli, E.; Elnimr, M.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Eun, L.; Fachini, P.; Fatemi, R.; Fedorisin, J.; Feng, A.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Gagliardi, Carl A.; Gaillard, L.; Gangadharan, D. R.; Ganti, M. S.; Garcia-Solis, E. J.; Geromitsos, A.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gorbunov, Y. N.; Gordon, A.; Grebenyuk, O.; Grosnick, D.; Grube, B.; Guertin, S. M.; Guimaraes, K. S. F. F.; Gupta, A.; Gupta, N.; Guryn, W.; Haag, B.; Hallman, T. J.; Hamed, A.; Harris, J. W.; He, W.; Heinz, M.; Heppelmann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffman, A. M.; Hoffmann, G. W.; Hofman, D. J.; Hollis, R. S.; Huang, H. Z.; Humanic, T. J.; Huo, L.; Igo, G.; Iordanova, A.; Jacobs, P.; Jacobs, W. W.; Jakl, P.; Jena, C.; Jin, F.; Jones, C. L.; Jones, P. G.; Joseph, J.; Judd, E. G.; Kabana, S.; Kajimoto, K.; Kang, K.; Kapitan, J.; Kauder, K.; Keane, D.; Kechechyan, A.; Kettler, D.; Khodyrev, V. Yu; Kikola, D. P.; Kiryluk, J.; Kisiel, A.; Klein, S. R.; Knospe, A. G.; Kocoloski, A.; Koetke, D. D.; Konzer, J.; Kopytine, M.; Koralt, I.; Korsch, W.; Kotchenda, L.; Kouchpil, V.; Kravtsov, P.; Kravtsov, V. I.; Krueger, K.; Krus, M.; Kuhn, C.; Kumar, L.; Kurnadi, P.; Lamont, M. A. C.; Landgraf, J. M.; LaPointe, S.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, C. -H; Lee, J. H.; Leight, W.; LeVine, M. J.; Li, C.; Li, N.; Li, Y.; Lin, G.; Lindenbaum, S. J.; Lisa, M. A.; Liu, F.; Liu, H.; Liu, J.; Liu, L.; Ljubicic, T.; Llope, W. J.; Longacre, R. S.; Love, W. A.; Lu, Y.; Ludlam, T.; Ma, G. L.; Ma, Y. G.; Mahapatra, D. P.; Majka, R.; Mall, O. I.; Mangotra, L. K.; Manweiler, R.; Margetis, S.; Markert, C.; Masui, H.; Matis, H. S.; Matulenko, Yu A.; McDonald, D.; McShane, T. S.; Meschanin, A.; Milner, R.; Minaev, N. G.; Mioduszewski, Saskia; Mischke, A.; Mohanty, B.; Morozov, D. A.; Munhoz, M. G.; Nandi, B. K.; Nattrass, C.; Nayak, T. K.; Nelson, J. M.; Netrakanti, P. K.; Ng, M. J.; Nogach, L. V.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Okada, H.; Okorokov, V.; Olson, D.; Pachr, M.; Page, B. S.; Pal, S. K.; Pandit, Y.; Panebratsev, Y.; Pawlak, T.; Peitzmann, T.; Perevoztchikov, V.; Perkins, C.; Peryt, W.; Phatak, S. C.; Pile, P.; Planinic, M.; Ploskon, M. A.; Pluta, J.; Plyku, D.; Poljak, N.; Poskanzer, A. M.; Potukuchi, B. V. K. S.; Prindle, D.; Pruneau, C.; Pruthi, N. K.; Pujahari, P. R.; Putschke, J.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Redwine, R.; Reed, R.; Ridiger, A.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Rose, A.; Roy, C.; Ruan, L.; Russcher, M. J.; Sahoo, R.; Sakai, S.; Sakrejda, I.; Sakuma, T.; Salur, S.; Sandweiss, J.; Sarsour, M.; Schambach, J.; Scharenberg, R. P.; Schmitz, N.; Seger, J.; Selyuzhenkov, I.; Seyboth, P.; Shabetai, A.; Shahaliev, E.; Shao, M.; Sharma, M.; Shi, S. S.; Shi, X. -H; Sichtermann, E. P.; Simon, F.; Singaraju, R. N.; Skoby, M. J.; Smirnov, N.; Sorensen, P.; Sowinski, J.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Staszak, D.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Suarez, M. C.; Subba, N. L.; Sumbera, M.; Sun, X. M.; Sun, Y.; Sun, Z.; Surrow, B.; Symons, T. J. M.; De Toledo, A. Szanto; Takahashi, J.; Tang, A. H.; Tang, Z.; Tarini, L. H.; Tarnowsky, T.; Thein, D.; Thomas, J. H.; Tian, J.; Timmins, A. R.; Timoshenko, S.; Tlusty, D.; Tokarev, M.; Trainor, T. A.; Tram, V. N.; Trentalange, S.; Tribble, Robert E.; Tsai, O. D.; Ulery, J.; Ullrich, T.; Underwood, D. G.; Van Buren, G.; van Nieuwenhuizen, G.; Vanfossen, J. A., Jr.; Varma, R.; Vasconcelos, G. M. S.; Vasiliev, A. N.; Videbaek, F.; Vigdor, S. E.; Viyogi, Y. P.; Vokal, S.; Voloshin, S. A.

    2009-01-01

    REVIEW C 80, 044905 (2009) Neutral pion production in Au+ Au collisions at ?sN N = 200 GeV B. I. Abelev,8 M. M. Aggarwal,30 Z. Ahammed,47 A. V. Alakhverdyants,17 B. D. Anderson,18 D. Arkhipkin,3 G. S. Averichev,17 J. Balewski,22 O. Barannikova,8 L. S.... Barnby,2 J. Baudot,15 S. Baumgart,52 D. R. Beavis,3 R. Bellwied,50 F. Benedosso,27 M. J. Betancourt,22 R. R. Betts,8 A. Bhasin,16 A. K. Bhati,30 H. Bichsel,49 J. Bielcik,10 J. Bielcikova,11 B. Biritz,6 L. C. Bland,3 I. Bnzarov,17 M. Bombara,2 B. E...

  5. q-deformed statistics and the role of a light fermionic dark matter in the supernovae SN1987A cooling

    E-Print Network [OSTI]

    Atanu Guha; Selvaganapathy. J; Prasanta Kumar Das

    2015-09-19

    Light dark matter($\\simeq 1-30~\\rm{MeV}$) particles, pair produced in electron-positron annihilation $ e^-e^+ \\stackrel{\\gamma}{\\longrightarrow} \\chi \\bar{\\chi}$ inside the core of the supernovae, can take away the energy released in the supernovae SN1987A explosion. Using the Raffelt's criterion on the emissivity rate of energy loss for any new channel $\\dot{\\varepsilon}(e^+ e^- \\to \\chi \\overline{\\chi}) \\le 10^{19}~{erg~g^{-1}s^{-1}}$ and working within the formalism of $q$-deformed statistics, we obtain a lower bound on the scale $\\Lambda$ of the dark matter effective theory. As the deformation parameter $q$ varies from $1.01$ to $1.10$, we find that the bound on $\\Lambda$ changes from $3.4\\times 10^6~\\rm{GeV}$ to $2.5\\times 10^7~\\rm{GeV}$ for a light dark matter of mass $m_\\chi = 30~\\rm{MeV}$. For $q=1$ (the undeformed scenario where fermions and bosons obey the normal Fermi-Dirac and Bose-Einstein statistics) we find $\\Lambda = 2.5\\times 10^6~\\rm{GeV}$ for $m_\\chi = 30~\\rm{MeV}$.

  6. q-deformed statistics and the role of a light fermionic dark matter in the supernovae SN1987A cooling

    E-Print Network [OSTI]

    Guha, Atanu; Das, Prasanta Kumar

    2015-01-01

    Light dark matter($\\simeq 1-30~\\rm{MeV}$) particles, pair produced in electron-positron annihilation $ e^-e^+ \\stackrel{\\gamma}{\\longrightarrow} \\chi \\bar{\\chi}$ inside the core of the supernovae, can take away the energy released in the supernovae SN1987A explosion. Using the Raffelt's criterion on the emissivity rate of energy loss for any new channel $\\dot{\\varepsilon}(e^+ e^- \\to \\chi \\overline{\\chi}) \\le 10^{19}~{erg~g^{-1}s^{-1}}$ and working within the formalism of $q$-deformed statistics, we obtain a lower bound on the scale $\\Lambda$ of the dark matter effective theory. As the deformation parameter $q$ varies from $1.01$ to $1.10$, we find that the bound on $\\Lambda$ changes from $3.4\\times 10^6~\\rm{GeV}$ to $2.5\\times 10^7~\\rm{GeV}$ for a light dark matter of mass $m_\\chi = 30~\\rm{MeV}$. For $q=1$ (the undeformed scenario where fermions and bosons obey the normal Fermi-Dirac and Bose-Einstein statistics) we find $\\Lambda = 2.5\\times 10^6~\\rm{GeV}$ for $m_\\chi = 30~\\rm{MeV}$.

  7. Alternative Mechanical Structure for LARP Nb3Sn Quadrupoles

    E-Print Network [OSTI]

    Anerella, M.

    2012-01-01

    2] G . Ambrosio el ai, "Mechanical performance of the L A RAlternative Mechanical Structure LARP Nb Sn Quadrupoles M .was performed for the 2-D mechanical structure. 2-D 6-node

  8. Characterization of Nb?Sn superconducting strand under pure bending

    E-Print Network [OSTI]

    Harris, David L., S.M. Massachusetts Institute of Technology

    2005-01-01

    Characterizing the strain-dependent behavior of technological Nb?Sn superconducting strand has been an important subject of research for the past 25 years. Most of the effort has focused on understanding the uniaxial tension ...

  9. Modeling of GE Appliances: Final Presentation

    SciTech Connect (OSTI)

    Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

    2013-01-31

    This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

  10. GE Turbine Parts www.edisonmachine.com

    E-Print Network [OSTI]

    Chiao, Jung-Chih

    GE Turbine Parts www.edisonmachine.com New authentic GE and Westinghouse Turbine Parts Muscle cars vehicle: Has the code for a hydrogen car been cracked? World-first working eukaryotic cell mad from's smallest windmills to power cell phones 1/17/2014http://www.gizmag.com/worlds-smallest-windmill-energy

  11. Phase transformation between Cu(In,Sn){sub 2} and Cu{sub 2}(In,Sn) compounds formed on single crystalline Cu substrate during solid state aging

    SciTech Connect (OSTI)

    Tian, Feifei; Liu, Zhi-Quan Guo, Jingdong

    2014-01-28

    Interfacial reactions between eutectic SnIn and single crystalline Cu during solid-state aging at low temperature were investigated systematically. Three types of phase transformations between Cu(In,Sn){sub 2} layer and Cu{sub 2}(In,Sn) layer were observed, which are Cu(In,Sn){sub 2} grows and Cu{sub 2}(In,Sn) consumes at 40?°C, Cu(In,Sn){sub 2} and Cu{sub 2}(In,Sn) grow simultaneously at 60?°C, as well as Cu(In,Sn){sub 2} consumes and Cu{sub 2}(In,Sn) grows at 80 and 100?°C. According to physicochemical approach, the chemical reactions at Cu/Cu{sub 2}(In,Sn)/Cu(In,Sn){sub 2}/SnIn interfaces were discussed in detail. It was concluded that the diffusion ability of Cu and In atoms dominated different phase transformations. When diffusion constants k{sub 1In2}?>?8/3k{sub 1Cu2} Cu(In,Sn){sub 2} will grow, and if k{sub 1Cu2}???k{sub 1In2} Cu{sub 2}(In,Sn) will grow. Both Cu(In,Sn){sub 2} and Cu{sub 2}(In,Sn) can grow in the condition of k{sub 1In2} ? k{sub 1Cu2}. The values of k{sub 1Cu2} and k{sub 1In2} at different temperatures on (100)Cu and (111)Cu substrate were also calculated or estimated by analyzing the growth kinetics of the compound layers.

  12. Dynamic Nuclear Polarization NMR Enables the Analysis of Sn-Beta Zeolite Prepared with Natural Abundance [superscript 119]Sn Precursors

    E-Print Network [OSTI]

    Gunther, William Robert

    The catalytic activity of tin-containing zeolites, such as Sn-Beta, is critically dependent on the successful incorporation of the tin metal center into the zeolite framework. However, synchrotron-based techniques or ...

  13. Ethanol Oxidation on the Ternary Pt–Rh–SnO2/C Electrocatalysts with Varied Pt:Rh:Sn ratios

    SciTech Connect (OSTI)

    Adzic, R.R.; Li, M.; Kowal, A.; Sasaki, K.; Marinkovic, N.; Su, D.; Korach, E.; Liu, P.

    2010-05-30

    Ternary Pt-Rh-SnO{sub 2}/C electrocatalysts with the atomic ratio Pt:Rh:Sn = 3:1:x, where x varies from 2 to 6, were synthesized using the modified polyol method followed by thermal treatment. Several techniques used to characterize these electrocatalysts showed they were composed of homogeneous PtRh alloy and SnO{sub 2}, having all three constituents coexisting in single nanoparticles with the average particle size around 1.4 nm and a narrow size distribution. While all the electrocatalysts investigated exhibited high catalytic activity for ethanol oxidation, the most active one had the composition with the Pt:Rh:Sn = 3:1:4 atomic ratio. These ternary-electrocatalysts effectively split the C-C bond in ethanol at room temperature in acidic solutions, which is verified using the in situ IRRAS technique.

  14. Isotope correlations as a probe for freeze-out characterization: central 124Sn+64Ni, 112Sn+58Ni collisions

    E-Print Network [OSTI]

    E. Geraci; Reverse collaboration

    2003-10-15

    124Sn+64Ni and 112Sn+58Ni reactions at 35 AMeV incident energy were studied with the forward part of CHIMERA multi-detector. The most central collisions were selected by means of a multidimensional analysis. The characteristics of the source formed in the central collisions, as size, temperature and volume, were inspected. The measured isotopes of light fragments (3 <= Z <=8) were used to examine isotope yield ratios that provide information on the free neutron to proton densities.

  15. Growth and characterization of isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals

    SciTech Connect (OSTI)

    Itoh, K.

    1992-10-01

    Isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm[sup 3] volume. To our knowledge, we have grown the first [sup 70]Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be [approximately]2 [times] cm[sup [minus]3] which is two order of magnitude better that of [sup 74]Ge crystals previously grown by two different groups. Isotopic enrichment of the [sup 70]Ge and the [sup 74]Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

  16. Growth and characterization of isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals

    SciTech Connect (OSTI)

    Itoh, K.

    1992-10-01

    Isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm{sup 3} volume. To our knowledge, we have grown the first {sup 70}Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be {approximately}2 {times} cm{sup {minus}3} which is two order of magnitude better that of {sup 74}Ge crystals previously grown by two different groups. Isotopic enrichment of the {sup 70}Ge and the {sup 74}Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

  17. Monolithic Ge-on-Si lasers for integrated photonics

    E-Print Network [OSTI]

    Liu, Jifeng

    We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility ...

  18. Is there a risk from not using GE animals?

    E-Print Network [OSTI]

    Murray, James D.; Maga, Elizabeth A.

    2010-01-01

    Is there a risk from not using GE animals? James D. Murray •rst genetically engi- neered (GE) plants and animals forthe debate often focuses on GE as a technique that is used

  19. Xergy Ships First Breakthrough Water Heater Compressor to GE...

    Energy Savers [EERE]

    Xergy Ships First Breakthrough Water Heater Compressor to GE Xergy Ships First Breakthrough Water Heater Compressor to GE September 15, 2015 - 3:41pm Addthis Xergy Inc. and GE...

  20. Passionate Technologists Wanted at ASME Turbo Expo|GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    who want to learn more about GE and its global Research Centers. For this purpose, the Aero & Thermal Systems groups of GE Global Research and representatives from several GE...

  1. Ge-on-Si laser for silicon photonics

    E-Print Network [OSTI]

    Camacho-Aguilera, Rodolfo Ernesto

    2013-01-01

    Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (<1x109cm-2) and point defects Ge ...

  2. Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al{sub 2}O{sub 3}/Ge structure

    SciTech Connect (OSTI)

    Shibayama, Shigehisa [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan) [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Kato, Kimihiko; Sakashita, Mitsuo; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)] [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2013-08-19

    The reaction mechanisms at Al{sub 2}O{sub 3}/Ge interfaces with thermal oxidation through the Al{sub 2}O{sub 3} layer have been investigated. X-ray photoelectron spectroscopy reveals that an Al{sub 6}Ge{sub 2}O{sub 13} layer is formed near the interface, and a GeO{sub 2} layer is formed on the Al{sub 2}O{sub 3} surface, suggesting Ge or GeO diffusion from the Ge surface. It is also clarified that the Al{sub 6}Ge{sub 2}O{sub 13} layer is formed by the different mechanism with a small activation energy of 0.2 eV, compared with the GeO{sub 2} formation limited by oxygen diffusion. Formation of Al-O-Ge bonds due to the AlGeO formation could lead appropriate interface structures with high interface qualities.

  3. Enhancement of thermal stability and water resistance in yttrium-doped GeO{sub 2}/Ge gate stack

    SciTech Connect (OSTI)

    Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Hyun Lee, Choong; Zhang, Wenfeng; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2014-03-03

    We have systematically investigated the material and electrical properties of yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) on Germanium (Ge). A significant improvement of both thermal stability and water resistance were demonstrated by Y-GeO{sub 2}/Ge stack, compared to that of pure GeO{sub 2}/Ge stack. The excellent electrical properties of Y-GeO{sub 2}/Ge stacks with low D{sub it} were presented as well as enhancement of dielectric constant in Y-GeO{sub 2} layer, which is beneficial for further equivalent oxide thickness scaling of Ge gate stack. The improvement of thermal stability and water resistance are discussed both in terms of the Gibbs free energy lowering and network modification of Y-GeO{sub 2}.

  4. Testimonials - Partnerships in Fuel Cells - GE Global Research...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Fuel Cells - GE Global Research Testimonials - Partnerships in Fuel Cells - GE Global Research Addthis An error occurred. Try watching this video on www.youtube.com, or enable...

  5. Work & Life at San Ramon | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    new window) Click to share on Tumblr (Opens in new window) Employee Organizations GE Software Women's Network TBD Celebrations GE Software Technology Conference This event allows...

  6. Rocket Science? No, It's Harder | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    says Juan Albeniz, Business Program Manager, Oil & Gas at GE Global Research Europe. Juan Albeniz, Business Program Manager, Oil & Gas at GE Global Research, Europe Juan...

  7. ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224

    E-Print Network [OSTI]

    Saskatchewan, University of

    GE 120 ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224 ABE 295 ABE 212Elective* Elective* AB E 311 ABE 313 ABE 312 GE 348#ABE 323 co-requisite ABE 327 HSS#@ HSS#@ ABE 324 GE 300# ABE 395 4TH YEAR ABE Elec* ABE Elec* ABE Elec*ABE 422 GE 449# Ag Elec* T.E.* T.E.* ABE Elec* Ag Elec

  8. Thermal conductivity of sputtered amorphous Ge films

    SciTech Connect (OSTI)

    Zhan, Tianzhuo; Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Kato, Ryozo; Sasaki, Michiko; Kagawa, Yutaka [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)] [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)

    2014-02-15

    We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids.

  9. High spin polarization in CoFeMnGe equiatomic quaternary Heusler alloy

    SciTech Connect (OSTI)

    Bainsla, Lakhan; Suresh, K. G.; Nigam, A. K.; Manivel Raja, M.; Varaprasad, B. S. D. Ch. S.; Takahashi, Y. K.; Hono, K.

    2014-11-28

    We report the structure, magnetic property, and spin polarization of CoFeMnGe equiatomic quaternary Heusler alloy. The alloy was found to crystallize in the cubic Heusler structure (prototype LiMgPdSn) with considerable amount of DO{sub 3} disorder. Thermal analysis result indicated the Curie temperature is about 750?K without any other phase transformation up to melting temperature. The magnetization value was close to that predicted by the Slater-Pauling curve. Current spin polarization of P?=?0.70?±?0.01 was deduced using point contact andreev reflection measurements. The temperature dependence of electrical resistivity has been fitted in the temperature range of 5–300?K in order to check for the half metallic behavior. Considering the high spin polarization and Curie temperature, this material appears to be promising for spintronic applications.

  10. Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers

    SciTech Connect (OSTI)

    Hudait, Mantu K.; Zhu Yan [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-21

    Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

  11. Superconducting and magnetic properties of Sr?Ir?Sn??

    SciTech Connect (OSTI)

    Biswas, P. K. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Wang, Kefeng [Brookhaven National Lab. (BNL), Upton, NY (United States); Amato, A. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Khasanov, R. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Luetkens, H. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Petrovic, C. [Brookhaven National Lab. (BNL), Upton, NY (United States); Cook, R. M. [Univ. of Warwick, Coventry (United Kingdom); Lees, M. R. [Univ. of Warwick, Coventry (United Kingdom); Morenzoni, E. [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    2014-10-01

    Magnetization and muon spin relaxation or rotation (µSR) measurements have been performed to study the superconducting and magnetic properties of Sr?Ir?Sn??. From magnetization measurements the lower and upper critical fields of Sr?Ir?Sn?? are found to be 81(1) Oe and 14.4(2) kOe, respectively. Zero-field µSR data show no sign of any magnetic ordering or weak magnetism in Sr?Ir?Sn??. Transverse-field µSR measurements in the vortex state provided the temperature dependence of the magnetic penetration depth ?. The dependence of ??² with temperature is consistent with the existence of single s-wave energy gap in the superconducting state of Sr?Ir?Sn?? with a gap value of 0.82(2) meV at absolute zero temperature. The magnetic penetration depth at zero temperature ?(0) is 291(3) nm. The ratio ?(0)/kBTc = 2.1(1) indicates that Sr?Ir?Sn?? should be considered as a strong-coupling superconductor.

  12. Superconducting and magnetic properties of Sr?Ir?Sn??

    SciTech Connect (OSTI)

    Biswas, P. K.; Wang, Kefeng; Amato, A.; Khasanov, R.; Luetkens, H.; Petrovic, C.; Cook, R. M.; Lees, M. R.; Morenzoni, E.

    2014-10-10

    Magnetization and muon spin relaxation or rotation (µSR) measurements have been performed to study the superconducting and magnetic properties of Sr?Ir?Sn??. From magnetization measurements the lower and upper critical fields of Sr?Ir?Sn?? are found to be 81(1) Oe and 14.4(2) kOe, respectively. Zero-field µSR data show no sign of any magnetic ordering or weak magnetism in Sr?Ir?Sn??. Transverse-field µSR measurements in the vortex state provided the temperature dependence of the magnetic penetration depth ?. The dependence of ??² with temperature is consistent with the existence of single s-wave energy gap in the superconducting state of Sr?Ir?Sn?? with a gap value of 0.82(2) meV at absolute zero temperature. The magnetic penetration depth at zero temperature ?(0) is 291(3) nm. The ratio ?(0)/kBTc = 2.1(1) indicates that Sr?Ir?Sn?? should be considered as a strong-coupling superconductor.

  13. Superconducting and magnetic properties of Sr?Ir?Sn??

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Biswas, P. K.; Wang, Kefeng; Amato, A.; Khasanov, R.; Luetkens, H.; Petrovic, C.; Cook, R. M.; Lees, M. R.; Morenzoni, E.

    2014-10-10

    Magnetization and muon spin relaxation or rotation (µSR) measurements have been performed to study the superconducting and magnetic properties of Sr?Ir?Sn??. From magnetization measurements the lower and upper critical fields of Sr?Ir?Sn?? are found to be 81(1) Oe and 14.4(2) kOe, respectively. Zero-field µSR data show no sign of any magnetic ordering or weak magnetism in Sr?Ir?Sn??. Transverse-field µSR measurements in the vortex state provided the temperature dependence of the magnetic penetration depth ?. The dependence of ??² with temperature is consistent with the existence of single s-wave energy gap in the superconducting state of Sr?Ir?Sn?? with a gap valuemore »of 0.82(2) meV at absolute zero temperature. The magnetic penetration depth at zero temperature ?(0) is 291(3) nm. The ratio ?(0)/kBTc = 2.1(1) indicates that Sr?Ir?Sn?? should be considered as a strong-coupling superconductor.« less

  14. GE Appliances: Order (2010-CE-2113)

    Broader source: Energy.gov [DOE]

    DOE issued an Order after entering into a Compromise Agreement with General Electric Appliances after finding GE Appliances had failed to certify that certain models of dehumidifiers comply with the applicable energy conservation standards.

  15. Researching NDE, Additive Manufacturing |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    I never thought I would get the incredible opportunity to become a summer intern at the GE Global Research Center, amongst such brilliant and tenacious individuals. I have been...

  16. GE's Christine Furstoss Named to NACIE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in Niskayuna, NY, Christine is responsible for working with both R&D leaders at GE's industrial businesses and with strategic partners to set strategy for growth, and to...

  17. Hubble space telescope and ground-based observations of the type Iax supernovae SN 2005hk and SN 2008A

    SciTech Connect (OSTI)

    McCully, Curtis; Jha, Saurabh W. [Department of Physics and Astronomy, Rutgers, the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, NJ 08854 (United States); Foley, Ryan J. [Astronomy Department, University of Illinois at Urbana-Champaign, 1002 West Green Street, Urbana, IL 61801 (United States); Chornock, Ryan [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Holtzman, Jon A. [Department of Astronomy, MSC 4500, New Mexico State University, P.O. Box 30001, Las Cruces, NM 88003 (United States); Balam, David D. [Dominion Astrophysical Observatory, Herzberg Institute of Astrophysics, 5071 West Saanich Road, Victoria, BC V9E 2E7 (Canada); Branch, David [Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman, OK 73019 (United States); Filippenko, Alexei V.; Ganeshalingam, Mohan; Li, Weidong [Department of Astronomy, University of California, Berkeley, CA 94720-3411 (United States); Frieman, Joshua [Kavli Institute for Cosmological Physics and Department of Astronomy and Astrophysics, University of Chicago, 5640 South Ellis Avenue, Chicago, IL 60637 (United States); Fynbo, Johan; Leloudas, Giorgos [Dark Cosmology Centre, Niels Bohr Institute, University of Copenhagen, Juliane Maries Vej 30, DK-2100 Copenhagen Ø (Denmark); Galbany, Lluis [Institut de Física d'Altes Energies, Universitat Autònoma de Barcelona, E-08193 Bellaterra (Barcelona) (Spain); Garnavich, Peter M. [Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States); Graham, Melissa L. [Las Cumbres Observatory Global Telescope Network, Goleta, CA 93117 (United States); Hsiao, Eric Y. [Carnegie Observatories, Las Campanas Observatory, Colina El Pino, Casilla 601 (Chile); Leonard, Douglas C., E-mail: cmccully@physics.rutgers.edu [Department of Astronomy, San Diego State University, San Diego, CA 92182 (United States); and others

    2014-05-10

    We present Hubble Space Telescope (HST) and ground-based optical and near-infrared observations of SN 2005hk and SN 2008A, typical members of the Type Iax class of supernovae (SNe). Here we focus on late-time observations, where these objects deviate most dramatically from all other SN types. Instead of the dominant nebular emission lines that are observed in other SNe at late phases, spectra of SNe 2005hk and 2008A show lines of Fe II, Ca II, and Fe I more than a year past maximum light, along with narrow [Fe II] and [Ca II] emission. We use spectral features to constrain the temperature and density of the ejecta, and find high densities at late times, with n{sub e} ? 10{sup 9} cm{sup –3}. Such high densities should yield enhanced cooling of the ejecta, making these objects good candidates to observe the expected 'infrared catastrophe', a generic feature of SN Ia models. However, our HST photometry of SN 2008A does not match the predictions of an infrared catastrophe. Moreover, our HST observations rule out a 'complete deflagration' that fully disrupts the white dwarf for these peculiar SNe, showing no evidence for unburned material at late times. Deflagration explosion models that leave behind a bound remnant can match some of the observed properties of SNe Iax, but no published model is consistent with all of our observations of SNe 2005hk and 2008A.

  18. Neutrinos from SN 1987a. A Puzzle Revisited

    E-Print Network [OSTI]

    Schatz, Gerd

    2015-01-01

    The smallest of the four detectors which claim to have observed neutrinos from SN 1987a registered the events more than 4 h earlier than the other three ones. This claim is not usually accepted because it is difficult to understand that the other (and larger) detectors did not register any events at the same time. It is shown that microlensing of the neutrinos by a star in-between the supernova (SN) and Earth can enhance the neutrino intensity at the position of one detector by more than an order of magnitude with respect to the other detectors. Such a configuration is improbable but not impossible. Essential for this enhancement is the small source diameter, of order 100 km. So if two bursts of neutrinos were emitted by SN 1987a at a separation of about 4 h it could be explained easily that the smallest detector observed the first burst while the other ones missed it and vice versa.

  19. GE Announces Vic Abate as New Chief Technology Officer | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Industrial Internet and Brilliant Factory. This transition marks another chapter in GE's transformation to become the world's premiere Digital Industrial company. Enabled by a...

  20. Test results of a Nb3Al/Nb3Sn subscale magnet for accelerator...

    Office of Scientific and Technical Information (OSTI)

    Test results of a Nb3AlNb3Sn subscale magnet for accelerator application Citation Details In-Document Search Title: Test results of a Nb3AlNb3Sn subscale magnet for accelerator...

  1. Type IIb supernova SN 2011dh: Spectra and photometry from the...

    Office of Scientific and Technical Information (OSTI)

    IIb supernova SN 2011dh: Spectra and photometry from the ultraviolet to the near-infrared Citation Details In-Document Search Title: Type IIb supernova SN 2011dh: Spectra and...

  2. Fabrication and Test of TQS01 - a 90 mm Nb3Sn Quadrupole Magnet for LARP

    E-Print Network [OSTI]

    Dietderich, D.

    2008-01-01

    and Test of TQS01 – a 90 mm Nb 3 Sn Quadrupole Magnet forTQS and TQC) with a 90-mm aperture are being constructed atStructure for an LHC 90 mm Nb 3 Sn quadrupole magnet”, IEEE

  3. Fabrication and Test of TQS01 -- a 90 mm Nb3Sn Quadrupole Magnet for LARP

    E-Print Network [OSTI]

    Caspi, S.

    2008-01-01

    and Test of TQS01 – a 90 mm Nb 3 Sn Quadrupole Magnet forTQS and TQC) with a 90-mm aperture are being constructed atStructure for an LHC 90 mm Nb 3 Sn quadrupole magnet”, IEEE

  4. Alpha Emission Near 100Sn and the Termination of the rp Process

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Alpha Emission Near 100 Sn and the Termination of the rp Process The astrophysical rp-process is thought to reach a termination point in the region of 100 Sn, via the...

  5. Template Synthesis of Tubular Sn-Based Nanostructures for Lithium Ion Storage

    E-Print Network [OSTI]

    Wang, Yong

    We report herewith the preparation of SnO? nanotubes with very good shape and size control, and with and without a carbon nanotube overlayer, The SnO?-core/carbon-shell nanotubes are excellent reversible Li ion storage ...

  6. Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition

    E-Print Network [OSTI]

    Jaramillo, Rafael

    Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent thermal evaporation, and it absorbs visible light strongly. However, ...

  7. Test Results for HD1, a 16 Tesla Nb3Sn Dipole Magnet

    E-Print Network [OSTI]

    Lietzke, A.F.

    2011-01-01

    Design and Fabrication ofa 16 Tesla Nb 3 Sn Dipole Magnet",Test Results for HD 1, a 16 Tesla Nb 3 Sn Dipole Magnet A.F.and bore fields above 16 Tesla. II. MAGNET FEATURES AND TEST

  8. Hubble Residuals of Nearby SN Ia Are Correlated with Host Galaxy...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Hubble Residuals of Nearby SN Ia Are Correlated with Host Galaxy Masses Citation Details In-Document Search Title: Hubble Residuals of Nearby SN Ia Are Correlated...

  9. Be a part of something bigger than yourself GE Healthcare

    E-Print Network [OSTI]

    Rimon, Elon

    Be a part of something bigger than yourself GE Healthcare Position: Mechanical Engineer as a contractor · Working at GE site at Tirat-Carmel. · Start: immediately · Duration 6-10 months, with optional elongation. ElgemsMoked@ge.com-CV www.gehealthcare.com We are GE Healthcare, a $17 billion division

  10. Aluminum-stabilized Nb/sub 3/Sn superconductor

    DOE Patents [OSTI]

    Scanlan, R.M.

    1984-02-10

    This patent discloses an aluminum-stabilized Nb/sub 3/Sn superconductor and process for producing same, utilizing ultrapure aluminum. Ductile components are co-drawn with aluminum to produce a conductor suitable for winding magnets. After winding, the conductor is heated to convert it to the brittle Nb/sub 3/Sn superconductor phase, using a temperature high enough to perform the transformation but still below the melting point of the aluminum. This results in reaction of substantially all of the niobium, while providing stabilization and react-in-place features which are beneficial in the fabrication of magnets utilizing superconducting materials.

  11. Aluminum-stabilized Nb[sub 3]Sn superconductor

    DOE Patents [OSTI]

    Scanlan, R.M.

    1988-05-10

    Disclosed are an aluminum-stabilized Nb[sub 3]Sn superconductor and process for producing same, utilizing ultrapure aluminum. Ductile components are co-drawn with aluminum to produce a conductor suitable for winding magnets. After winding, the conductor is heated to convert it to the brittle Nb[sub 3]Sn superconductor phase, using a temperature high enough to perform the transformation but still below the melting point of the aluminum. This results in reaction of substantially all of the niobium, while providing stabilization and react-in-place features which are beneficial in the fabrication of magnets utilizing superconducting materials. 4 figs.

  12. Axisymmetrical Structures of Planetary Nebulae and SN 1987A

    E-Print Network [OSTI]

    Noam Soker

    1998-04-02

    I summarize some recent models and ideas for the formation of axisymmetrical structures of planetary nebulae and the three rings of SN 1987A, as follows. (a) I review the general role of binary companions, including brown dwarfs and planets. (b) I propose a mechanism for axisymmetrical mass loss on the AGB that may account for the axially symmetric structures of elliptical planetary nebulae and that operates for slowly rotating AGB stars. (c) I propose a model for the formation of the two outer rings of SN 1987A, which is based on the numerical simulation of Soker (1989), and discuss a mechanism for their displacement from the exploding star.

  13. DETAILED RADIO VIEW ON TWO STELLAR EXPLOSIONS AND THEIR HOST GALAXY: XRF 080109/SN 2008D AND SN 2007uy in NGC 2770

    SciTech Connect (OSTI)

    Van der Horst, A. J.; Kouveliotou, C.; Paragi, Z.; Sage, L. J.; Pal, S.; Taylor, G. B.; Granot, J.; Ramirez-Ruiz, E.; Ishwara-Chandra, C. H.; Oosterloo, T. A.; Garrett, M. A.; Wiersema, K.; Starling, R. L. C.; Bhattacharya, D.; Curran, P. A.

    2011-01-10

    The galaxy NGC 2770 hosted two core-collapse supernova (SN) explosions, SN 2008D and SN 2007uy, within 10 days of each other and 9 years after the first SN of the same type, SN 1999eh, was found in that galaxy. In particular, SN 2008D attracted a lot of attention due to the detection of an X-ray outburst, which has been hypothesized to be caused by either a (mildly) relativistic jet or the SN shock breakout. We present an extensive study of the radio emission from SN 2008D and SN 2007uy: flux measurements with the Westerbork Synthesis Radio Telescope and the Giant Metrewave Radio Telescope, covering {approx}600 days with observing frequencies ranging from 325 MHz to 8.4 GHz. The results of two epochs of global Very Long Baseline Interferometry observations are also discussed. We have examined the molecular gas in the host galaxy NGC 2770 with the Arizona Radio Observatory 12 m telescope, and present the implications of our observations for the star formation and seemingly high SN rate in this galaxy. Furthermore, we discuss the near-future observing possibilities of the two SNe and their host galaxy at low radio frequencies with the Low Frequency Array.

  14. Electrochemical Properties of Disordered-Carbon-Coated SnO2 Nanoparticles for Li Rechargeable Batteries

    E-Print Network [OSTI]

    Park, Byungwoo

    Batteries Taeho Moon, Chunjoong Kim, Sun-Tae Hwang, and Byungwoo Park*,z School of Materials Science batteries.1-5 It is rationalized that the reactions of SnO2 with lithium are SnO2 + 4Li Sn + 2Li2O and Sn is to distribute nanoparticles uniformly on a large matrix such as graphite, mesoporous carbon, etc.12,13 However

  15. Microstructure development in Nb3Sn(Ti) internal tin superconducting wire

    E-Print Network [OSTI]

    Elliott, James

    drawing, increase Nb3Sn layer growth rate and improve Jc at high magnetic fields [4, 5]. In the wires have studied the phase formation sequences in a Nb3Sn `internal tin' process superconductor. Heat and Nb3Sn. Specimens were quenched at different points of the heat treatment, followed by metallography

  16. Study into a role for Aar2p in U5 snRNP biogenesis 

    E-Print Network [OSTI]

    Cristao, Vanessa Solange Fernandes de Oliveira

    2011-06-27

    Aar2p is an essential yeast protein involved in pre-mRNA splicing and component of a U5 snRNP precursor form. It has been suggested that the mature U5 snRNP and U4/U6.U5 tri-snRNP assemble from the Aar2p-U5 core particle ...

  17. Branched CNT@SnO2 nanorods@carbon hierarchical heterostructures for lithium ion

    E-Print Network [OSTI]

    Qi, Limin

    Branched CNT@SnO2 nanorods@carbon hierarchical heterostructures for lithium ion batteries with high used as an anode material in lithium ion batteries, the branched CNT@SnO2@C heterostructures exhibited of the 1D mesocrystalline SnO2 nanorods. Introduction Lithium ion batteries (LIBs) have become

  18. UC IRVINE GENERAL EDUCATION (GE) REQUIREMENT AND APPROVED GE COURSES, 201213 Includes course titles and Schedule of Classes designations

    E-Print Network [OSTI]

    Loudon, Catherine

    UC IRVINE GENERAL EDUCATION (GE) REQUIREMENT AND APPROVED GE COURSES, 2012­13 Includes course titles and Schedule of Classes designations GENERAL EDUCATION (GE) REQUIREMENT UCI is committed undergraduates complete a set of general education (GE) requirements. General education courses introduce

  19. 2009-10 Princeton Global Scholar Ge Zhaoguang. Professor Ge is the founding director of the National Institute for Advanced

    E-Print Network [OSTI]

    2009-10 Princeton Global Scholar Ge Zhaoguang. Professor Ge is the founding director, and emendation of all sorts of newly discovered texts (mostly found at archaeological sites). Professor Ge University, Professor Ge taught at Tsinghua University for a number of years. He is known for many important

  20. Measurement of the direct energy gap of coherently strained SnxGe1x Ge,,001... heterostructures

    E-Print Network [OSTI]

    Atwater, Harry

    Measurement of the direct energy gap of coherently strained SnxGe1Àx ÕGe,,001... heterostructures The direct energy gap has been measured for coherently strained SnxGe1 x alloys on Ge 001 substrates with 0 for coherently strained SnxGe1 x alloys indicates a large alloy contribution and a small strain contribution

  1. GE Advising & Registration Students FT Faculty PT Faculty Admin Unit 4 Other Staff Students have access to quality GE advising

    E-Print Network [OSTI]

    de Lijser, Peter

    GE Advising & Registration Students FT Faculty PT Faculty Admin Unit 4 Other Staff Students have access to quality GE advising 9% 13% 11% 13% 10% 8% Faculty can easily advise students on GE requirements 10% 18% 9% 24% 33% 11% Staff academic advisors can easily advise students on GE requirements 8% 11

  2. Relaxation and recombination processes in Ge/SiGe multiple quantum wells

    SciTech Connect (OSTI)

    Gatti, E., E-mail: gatti@mater.unimib.it; Giorgioni, A., E-mail: gatti@mater.unimib.it; Grilli, E., E-mail: gatti@mater.unimib.it; Guzzi, M., E-mail: gatti@mater.unimib.it [L-NESS and Università di Milano-Bicocca, Dip. di Scienza dei Materiali, via Cozzi 53, 20125 Milano (Italy); Chrastina, D.; Isella, G. [L-NESS and Politecnico di Milano, Dip. di Fisica, via Anzani 42, 22100 Como (Italy); Chernikov, A.; Kolata, K.; Bornwasser, V.; Köster, N. S.; Woscholski, R.; Chatterjee, S. [Faculty of Physics and Materials Sciences Center, Philipps-Universität, Renthof 5, 35032 Marburg (Germany)

    2013-12-04

    The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at ? is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed.

  3. Evolution of the pygmy dipole resonance in Sn isotopes

    E-Print Network [OSTI]

    H. K. Toft; A. C. Larsen; A. Bürger; M. Guttormsen; A. Görgen; H. T. Nyhus; T. Renstrøm; S. Siem; G. M. Tveten; A. Voinov

    2011-05-18

    Nuclear level density and $\\gamma$-ray strength functions of $^{121,122}$Sn below the neutron separation energy are extracted with the Oslo method using the ($^3$He,$^3$He$^\\prime\\gamma$) and ($^3$He,$\\alpha \\gamma$) reactions. The level densities of $^{121,122}$Sn display step-like structures, interpreted as signatures of neutron pair breaking. An enhancement in both strength functions, compared to standard models for radiative strength, is observed in our measurements for $E_\\gamma \\gtrsim 5.2 $ MeV. This enhancement is compatible with pygmy resonances centered at $\\approx 8.4(1)$ and $\\approx 8.6(2)$ MeV, respectively, and with integrated strengths corresponding to $\\approx1.8^{+1}_{-5}%$ of the classical Thomas-Reiche-Kuhn sum rule. Similar resonances were also seen in $^{116-119}$Sn. Experimental neutron-capture cross reactions are well reproduced by our pygmy resonance predictions, while standard strength models are less successful. The evolution as a function of neutron number of the pygmy resonance in $^{116-122}$Sn is described as a clear increase of centroid energy from 8.0(1) to 8.6(2) MeV, but with no observable difference in integrated strengths.

  4. Mg2SnO4 ceramics I. Synthesisprocessingmicrostructure correlation

    E-Print Network [OSTI]

    Azad, Abdul-Majeed

    Mg2SnO4 ceramics I. Synthesis±processing±microstructure correlation Abdul-Majeed Azad *, Liew Jing- mical formula MSnO3 (M=Ca, Sr and Ba), have recently been studied as potential electronic ceramics-8842(00)00085-7 Ceramics International 27 (2001) 325±334 www.elsevier.com/locate/ceramint * Corresponding author at current

  5. Balance functions from Au+Au, d+Au, and p+p collisions at root s(NN)=200 Ge

    E-Print Network [OSTI]

    Aggarwal, M. M.; Ahammed, Z.; Alakhverdyants, A. V.; Alekseev, I.; Alford, J.; Anderson, B. D.; Arkhipkin, D.; Averichev, G. S.; Balewski, J.; Barnby, L. S.; Baumgart, S.; Beavis, D. R.; Bellwied, R.; Betancourt, M. J.; Betts, R. R.; Bhasin, A.; Bhati, A. K.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Biritz, B.; Bland, L. C.; Bonner, B. E.; Bouchet, J.; Braidot, E.; Brandin, A. V.; Bridgeman, A.; Bruna, E.; Bueltmann, S.; Bunzarov, I.; Burton, T. P.; Cai, X. Z.; Caines, H.; Sanchez, M. Calderon de la Barca; Catu, O.; Cebra, D.; Cendejas, R.; Cervantes, M. C.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H. F.; Chen, J. H.; Chen, J. Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Choi, K. E.; Christie, W.; Chung, P.; Clarke, R. F.; Codrington, M. J. M.; Corliss, R.; Cramer, J. G.; Crawford, H. J.; Das, D.; Dash, S.; Leyva, A. Davila; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; Derevschikov, A. A.; de Souza, R. Derradi; Didenko, L.; Djawotho, P.; Dogra, S. M.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Dunlop, J. C.; Mazumdar, M. R. Dutta; Efimov, L. G.; Elhalhuli, E.; Elnimr, M.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Eun, L.; Evdokimov, O.; Fachini, P.; Fatemi, R.; Fedorisin, J.; Fersch, R. G.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Gagliardi, Carl A.; Gangadharan, D. R.; Ganti, M. S.; Garcia-Solis, E. J.; Geromitsos, A.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gorbunov, Y. N.; Gordon, A.; Grebenyuk, O.; Grosnick, D.; Guertin, S. M.; Gupta, A.; Gupta, N.; Guryn, W.; Haag, B.; Hamed, A.; Han, L-X; Harris, J. W.; Hays-Wehle, J. P.; Heinz, M.; Heppelmann, S.; Hirsch, A.; Hjort, E.; Hoffman, A. M.; Hoffmann, G. W.; Hofman, D. J.; Huang, B.; Huang, H. Z.; Humanic, T. J.; Huo, L.; Igo, G.; Jacobs, P.; Jacobs, W. W.; Jena, C.; Jin, F.; Jones, C. L.; Jones, P. G.; Joseph, J.; Judd, E. G.; Kabana, S.; Kajimoto, K.; Kang, K.; Kapitan, J.; Kauder, K.; Keane, D.; Kechechyan, A.; Kettler, D.; Kikola, D. P.; Kiryluk, J.; Kisiel, A.; Klein, S. R.; Knospe, A. G.; Kocoloski, A.; Koetke, D. D.; Kollegger, T.; Konzer, J.; Koralt, I.; Koroleva, L.; Korsch, W.; Kotchenda, L.; Kouchpil, V.; Kravtsov, P.; Krueger, K.; Krus, M.; Kumar, L.; Kurnadi, P.; Lamont, M. A. C.; Landgraf, J. M.; LaPointe, S.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, C-H; Lee, J. H.; Leight, W.; LeVine, M. J.; Li, C.; Li, L.; Li, N.; Li, W.; Li, X.; Li, X.; Li, Y.; Li, Z. M.; Lin, G.; Lindenbaum, S. J.; Lisa, M. A.; Liu, F.; Liu, H.; Liu, J.; Ljubicic, T.; Llope, W. J.; Longacre, R. S.; Love, W. A.; Lu, Y.; Luo, X.; Ma, G. L.; Ma, Y. G.; Mahapatra, D. P.; Majka, R.; Mall, O. I.; Mangotra, L. K.; Manweiler, R.; Margetis, S.; Markert, C.; Masui, H.; Matis, H. S.; Matulenko, Yu A.; McDonald, D.; McShane, T. S.; Meschanin, A.; Milner, R.; Minaev, N. G.; Mioduszewski, Saskia; Mischke, A.; Mitrovski, M. K.; Mohanty, B.; Mondal, M. M.; Morozov, B.; Morozov, D. A.; Munhoz, M. G.; Nandi, B. K.; Nattrass, C.; Nayak, T. K.; Nelson, J. M.; Netrakanti, P. K.; Ng, M. J.; Nogach, L. V.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Okorokov, V.; Oldag, E. W.; Olson, D.; Pachr, M.; Page, B. S.; Pal, S. K.; Pandit, Y.; Panebratsev, Y.; Pawlak, T.; Peitzmann, T.; Perevoztchikov, V.; Perkins, C.; Peryt, W.; Phatak, S. C.; Pile, P.; Planinic, M.; Ploskon, M. A.; Pluta, J.; Plyku, D.; Poljak, N.; Poskanzer, A. M.; Potukuchi, B. V. K. S.; Powell, C. B.; Prindle, D.; Pruneau, C.; Pruthi, N. K.; Pujahari, P. R.; Putschke, J.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Redwine, R.; Reed, R.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Rose, A.; Roy, C.; Ruan, L.; Sahoo, R.; Sakai, S.; Sakrejda, I.; Sakuma, T.; Salur, S.; Sandweiss, J.; Sangaline, E.; Schambach, J.; Scharenberg, R. P.; Schmitz, N.; Schuster, T. R.; Seele, J.; Seger, J.; Selyuzhenkov, I.; Seyboth, P.; Shahaliev, E.; Shao, M.; Sharma, M.; Shi, S. S.; Sichtermann, E. P.; Simon, F.; Singaraju, R. N.; Skoby, M. J.; Smirnov, N.; Sorensen, P.; Sowinski, J.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Staszak, D.; Stevens, J. R.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Suarez, M. C.; Subba, N. L.; Sumbera, M.; Sun, X. M.; Sun, Y.; Sun, Z.; Surrow, B.; Svirida, D. N.; Symons, T. J. M.; De Toledo, A. Szanto; Takahashi, J.; Tang, A. H.; Tang, Z.; Tarini, L. H.; Tarnowsky, T.; Thein, D.; Thomas, J. H.; Tian, J.; Timmins, A. R.; Timoshenko, S.; Tlusty, D.; Tokarev, M.; Tram, V. N.; Trentalange, S.; Tribble, Robert E.; Tsai, O. D.; Ulery, J.; Ullrich, T.; Underwood, D. G.; Van Buren, G.; van Leeuwen, M.; van Nieuwenhuizen, G.; Vanfossen, J. A., Jr.; Varma, R.; Vasconcelos, G. M. S.; Vasiliev, A. N.; Videbaek, F.; Viyogi, Y. P.; Vokal, S.; Voloshin, S. A.; Wada, M.; Walker, M.; Wang, F.; Wang, G.; Wang, H.; Wang, J. S.; Wang, Q.

    2010-01-01

    REVIEW C 82, 024905 (2010) Balance functions from Au + Au, d + Au, and p + p collisions at ?sN N = 200 GeV M. M. Aggarwal,31 Z. Ahammed,22 A. V. Alakhverdyants,18 I. Alekseev,16 J. Alford,19 B. D. Anderson,19 D. Arkhipkin,3 G. S. Averichev,18 J.... Balewski,23 L. S. Barnby,2 S. Baumgart,53 D. R. Beavis,3 R. Bellwied,51 M. J. Betancourt,23 R. R. Betts,8 A. Bhasin,17 A. K. Bhati,31 H. Bichsel,50 J. Bielcik,10 J. Bielcikova,11 B. Biritz,6 L. C. Bland,3 B. E. Bonner,37 J. Bouchet,19 E. Braidot,28 A. V...

  6. Azimuthal di-hadron correlations in d plus Au and Au plus Au collisions at root s(NN)=200 GeV measured at the STAR detector 

    E-Print Network [OSTI]

    Aggarwal, M. M.; Ahammed, Z.; Alakhverdyants, A. V.; Alekseev, I.; Alford, J.; Anderson, B. D.; Arkhipkin, D.; Averichev, G. S.; Balewski, J.; Barnby, L. S.; Baumgart, S.; Beavis, D. R.; Bellwied, R.; Betancourt, M. J.; Betts, R. R.; Bhasin, A.; Bhati, A. K.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Biritz, B.; Bland, L. C.; Bonner, B. E.; Bouchet, J.; Braidot, E.; Brandin, A. V.; Bridgeman, A.; Bruna, E.; Bueltmann, S.; Bunzarov, I.; Burton, T. P.; Cai, X. Z.; Caines, H.; Sanchez, M. Calderon de la Barca; Catu, O.; Cebra, D.; Cendejas, R.; Cervantes, M. C.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H. F.; Chen, J. H.; Chen, J. Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Choi, K. E.; Christie, W.; Chung, P.; Clarke, R. F.; Codrington, M. J. M.; Corliss, R.; Cramer, J. G.; Crawford, H. J.; Das, D.; Dash, S.; Leyva, A. Davila; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; Derevschikov, A. A.; de Souza, R. Derradi; Didenko, L.; Djawotho, P.; Dogra, S. M.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Dunlop, J. C.; Mazumdar, M. R. Dutta; Efimov, L. G.; Elhalhuli, E.; Elnimr, M.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Eun, L.; Evdokimov, O.; Fachini, P.; Fatemi, R.; Fedorisin, J.; Fersch, R. G.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Gagliardi, Carl A.; Gangadharan, D. R.; Ganti, M. S.; Garcia-Solis, E. J.; Geromitsos, A.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gorbunov, Y. N.; Gordon, A.; Grebenyuk, O.; Grosnick, D.; Guertin, S. M.; Gupta, A.; Gupta, N.; Guryn, W.; Haag, B.; Hamed, A.; Han, L. -X; Harris, J. W.; Hays-Wehle, J. P.; Heinz, M.; Heppelmann, S.; Hirsch, A.; Hjort, E.; Hoffman, A. M.; Hoffmann, G. W.; Hofman, D. J.; Horner, M. J.; Huang, B.; Huang, H. Z.; Humanic, T. J.; Huo, L.; Igo, G.; Jacobs, P.; Jacobs, W. W.; Jena, C.; Jin, F.; Jones, C. L.; Jones, P. G.; Joseph, J.; Judd, E. G.; Kabana, S.; Kajimoto, K.; Kang, K.; Kapitan, J.; Kauder, K.; Keane, D.; Kechechyan, A.; Kettler, D.; Kikola, D. P.; Kiryluk, J.; Kisiel, A.; Klein, S. R.; Knospe, A. G.; Kocoloski, A.; Koetke, D. D.; Kollegger, T.; Konzer, J.; Koralt, I.; Koroleva, L.; Korsch, W.; Kotchenda, L.; Kouchpil, V.; Kravtsov, P.; Krueger, K.; Krus, M.; Kumar, L.; Kurnadi, P.; Lamont, M. A. C.; Landgraf, J. M.; LaPointe, S.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, C. -H; Lee, J. H.; Leight, W.; LeVine, M. J.; Li, C.; Li, L.; Li, N.; Li, W.; Li, X.; Li, X.; Li, Y.; Li, Z. M.; Lin, G.; Lindenbaum, S. J.; Lisa, M. A.; Liu, F.; Liu, H.; Liu, J.; Ljubicic, T.; Llope, W. J.; Longacre, R. S.; Love, W. A.; Lu, Y.; Luo, X.; Ma, G. L.; Ma, Y. G.; Mahapatra, D. P.; Majka, R.; Mall, O. I.; Mangotra, L. K.; Manweiler, R.; Margetis, S.; Markert, C.; Masui, H.; Matis, H. S.; Matulenko, Yu A.; McDonald, D.; McShane, T. S.; Meschanin, A.; Milner, R.; Minaev, N. G.; Mioduszewski, Saskia; Mischke, A.; Mitrovski, M. K.; Mohanty, B.; Mondal, M. M.; Morozov, B.; Morozov, D. A.; Munhoz, M. G.; Nandi, B. K.; Nattrass, C.; Nayak, T. K.; Nelson, J. M.; Netrakanti, P. K.; Ng, M. J.; Nogach, L. V.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Okorokov, V.; Oldag, E. W.; Olson, D.; Pachr, M.; Page, B. S.; Pal, S. K.; Pandit, Y.; Panebratsev, Y.; Pawlak, T.; Peitzmann, T.; Perevoztchikov, V.; Perkins, C.; Peryt, W.; Phatak, S. C.; Pile, P.; Planinic, M.; Ploskon, M. A.; Pluta, J.; Plyku, D.; Poljak, N.; Poskanzer, A. M.; Potukuchi, B. V. K. S.; Powell, C. B.; Prindle, D.; Pruneau, C.; Pruthi, N. K.; Pujahari, P. R.; Putschke, J.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Redwine, R.; Reed, R.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Rose, A.; Roy, C.; Ruan, L.; Sahoo, R.; Sakai, S.; Sakrejda, I.; Sakuma, T.; Salur, S.; Sandweiss, J.; Sangaline, E.; Schambach, J.; Scharenberg, R. P.; Schmitz, N.; Schuster, T. R.; Seele, J.; Seger, J.; Selyuzhenkov, I.; Seyboth, P.; Shahaliev, E.; Shao, M.; Sharma, M.; Shi, S. S.; Sichtermann, E. P.; Simon, F.; Singaraju, R. N.; Skoby, M. J.; Smirnov, N.; Sorensen, P.; Sowinski, J.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Staszak, D.; Stevens, J. R.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Suarez, M. C.; Subba, N. L.; Sumbera, M.; Sun, X. M.; Sun, Y.; Sun, Z.; Surrow, B.; Svirida, D. N.; Symons, T. J. M.; de Toledo, A. Szanto; Takahashi, J.; Tang, A. H.; Tang, Z.; Tarini, L. H.; Tarnowsky, T.; Thein, D.; Thomas, J. H.; Tian, J.; Timmins, A. R.; Timoshenko, S.; Tlusty, D.; Tokarev, M.; Trainor, T. A.; Tram, V. N.; Trentalange, S.; Tribble, Robert E.; Tsai, O. D.; Ulery, J.; Ullrich, T.; Underwood, D. G.; Van Buren, G.; van Leeuwen, M.; van Nieuwenhuizen, G.; Vanfossen, J. A., Jr.; Varma, R.; Vasconcelos, G. M. S.; Vasiliev, A. N.; Videbaek, F.; Viyogi, Y. P.; Vokal, S.; Voloshin, S. A.; Wada, M.; Walker, M.; Wang, F.; Wang, G.

    2010-01-01

    REVIEW C 82, 024912 (2010) Azimuthal di-hadron correlations in d + Au and Au+Au collisions at ?sN N = 200 GeV measured at the STAR detector M. M. Aggarwal,31 Z. Ahammed,22 A. V. Alakhverdyants,18 I. Alekseev,16 J. Alford,19 B. D. Anderson,19 D.... Arkhipkin,3 G. S. Averichev,18 J. Balewski,23 L. S. Barnby,2 S. Baumgart,53 D. R. Beavis,3 R. Bellwied,51 M. J. Betancourt,23 R. R. Betts,8 A. Bhasin,17 A. K. Bhati,31 H. Bichsel,50 J. Bielcik,10 J. Bielcikova,11 B. Biritz,6 L. C. Bland,3 B. E. Bonner,37 J...

  7. Identified particle production, azimuthal anisotropy, and interferometry measurements in Au plus Au collisions at root s(NN)=9.2 Ge

    E-Print Network [OSTI]

    Abelev, B. I.; Aggarwal, M. M.; Ahammed, Z.; Alakhverdyants, A. V.; Anderson, B. D.; Arkhipkin, D.; Averichev, G. S.; Balewski, J.; Barannikova, O.; Barnby, L. S.; Baumgart, S.; Beavis, D. R.; Bellwied, R.; Benedosso, F.; Betancourt, M. J.; Betts, R. R.; Bhasin, A.; Bhati, A. K.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Biritz, B.; Bland, L. C.; Bnzarov, I.; Bonner, B. E.; Bouchet, J.; Braidot, E.; Brandin, A. V.; Bridgeman, A.; Bruna, E.; Bueltmann, S.; Burton, T. P.; Cai, X. Z.; Caines, H.; Sanchez, M. Calderon de la Barca; Catu, O.; Cebra, D.; Cendejas, R.; Cervantes, M. C.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H. F.; Chen, J. H.; Chen, J. Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Choi, K. E.; Christie, W.; Chung, P.; Clarke, R. F.; Codrington, M. J. M.; Corliss, R.; Cramer, J. G.; Crawford, H. J.; Das, D.; Dash, S.; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; DePhillips, M.; Derevschikov, A. A.; de Souza, R. Derradi; Didenko, L.; Djawotho, P.; Dogra, S. M.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Dunlop, J. C.; Mazumdar, M. R. Dutta; Efimov, L. G.; Elhalhuli, E.; Elnimr, M.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Eun, L.; Fachini, P.; Fatemi, R.; Fedorisin, J.; Fersch, R. G.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Gagliardi, Carl A.; Gangadharan, D. R.; Ganti, M. S.; Garcia-Solis, E. J.; Geromitsos, A.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gorbunov, Y. N.; Gordon, A.; Grebenyuk, O.; Grosnick, D.; Grube, B.; Guertin, S. M.; Gupta, A.; Gupta, N.; Guryn, W.; Haag, B.; Hallman, T. J.; Hamed, A.; Han, L. -X; Harris, J. W.; Hays-Wehle, J. P.; Heinz, M.; Heppelmann, S.; Hirsch, A.; Hjort, E.; Hoffman, A. M.; Hoffmann, G. W.; Hofman, D. J.; Hollis, R. S.; Huang, H. Z.; Humanic, T. J.; Huo, L.; Igo, G.; Iordanova, A.; Jacobs, P.; Jacobs, W. W.; Jakl, P.; Jena, C.; Jin, F.; Jones, C. L.; Jones, P. G.; Joseph, J.; Judd, E. G.; Kabana, S.; Kajimoto, K.; Kang, K.; Kapitan, J.; Kauder, K.; Keane, D.; Kechechyan, A.; Kettler, D.; Khodyrev, V. Yu; Kikola, D. P.; Kiryluk, J.; Kisiel, A.; Klein, S. R.; Knospe, A. G.; Kocoloski, A.; Koetke, D. D.; Kollegger, T.; Konzer, J.; Kopytine, M.; Koralt, I.; Korsch, W.; Kotchenda, L.; Kouchpil, V.; Kravtsov, P.; Kravtsov, V. I.; Krueger, K.; Krus, M.; Kumar, L.; Kurnadi, P.; Lamont, M. A. C.; Landgraf, J. M.; LaPointe, S.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, C-H; Lee, J. H.; Leight, W.; LeVine, M. J.; Li, C.; Li, N.; Li, Y.; Li, Z.; Lin, G.; Lin, X.; Lindenbaum, S. J.; Lisa, M. A.; Liu, F.; Liu, H.; Liu, J.; Ljubicic, T.; Llope, W. J.; Longacre, R. S.; Love, W. A.; Lu, Y.; Ludlam, T.; Ma, G. L.; Ma, Y. G.; Mahapatra, D. P.; Majka, R.; Mall, O. I.; Mangotra, L. K.; Manweiler, R.; Margetis, S.; Markert, C.; Masui, H.; Matis, H. S.; Matulenko, Yu A.; McDonald, D.; McShane, T. S.; Meschanin, A.; Milner, R.; Minaev, N. G.; Mioduszewski, Saskia; Mischke, A.; Mitrovski, M. K.; Mohanty, B.; Morozov, D. A.; Munhoz, M. G.; Nandi, B. K.; Nattrass, C.; Nayak, T. K.; Nelson, J. M.; Netrakanti, P. K.; Ng, M. J.; Nogach, L. V.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Okada, H.; Okorokov, V.; Olson, D.; Pachr, M.; Page, B. S.; Pal, S. K.; Pandit, Y.; Panebratsev, Y.; Pawlak, T.; Peitzmann, T.; Perevoztchikov, V.; Perkins, C.; Peryt, W.; Phatak, S. C.; Pile, P.; Planinic, M.; Ploskon, M. A.; Pluta, J.; Plyku, D.; Poljak, N.; Poskanzer, A. M.; Potukuchi, B. V. K. S.; Prindle, D.; Pruneau, C.; Pruthi, N. K.; Pujahari, P. R.; Putschke, J.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Redwine, R.; Reed, R.; Rehberg, J. M.; Ridiger, A.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Rose, A.; Roy, C.; Ruan, L.; Russcher, M. J.; Sahoo, R.; Sakai, S.; Sakrejda, I.; Sakuma, T.; Salur, S.; Sandweiss, J.; Schambach, J.; Scharenberg, R. P.; Schmitz, N.; Schuster, T. R.; Seele, J.; Seger, J.; Selyuzhenkov, I.; Seyboth, P.; Shahaliev, E.; Shao, M.; Sharma, M.; Shi, S. S.; Sichtermann, E. P.; Simon, F.; Singaraju, R. N.; Skoby, M. J.; Smirnov, N.; Sorensen, P.; Sowinski, J.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Staszak, D.; Stephans, G. S. F.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Suarez, M. C.; Subba, N. L.; Sumbera, M.; Sun, X. M.; Sun, Y.; Sun, Z.; Surrow, B.; Symons, T. J. M.; de Toledo, A. Szanto; Takahashi, J.; Tang, A. H.; Tang, Z.; Tarini, L. H.; Tarnowsky, T.; Thein, D.; Thomas, J. H.; Tian, J.; Timmins, A. R.; Timoshenko, S.; Tlusty, D.; Tokarev, M.; Trainor, T. A.; Tram, V. N.; Trentalange, S.; Tribble, Robert E.; Tsai, O. D.; Ulery, J.; Ullrich, T.; Underwood, D. G.; Van Buren, G.; van Nieuwenhuizen, G.; Vanfossen, J. A., Jr.; Varma, R.; Vasconcelos, G. M. S.; Vasiliev, A. N.; Videbaek, F.; Viyogi, Y. P.; Vokal, S.; Voloshin, S. A.; Wada, M.; Walker, M.; Wang, F.

    2010-01-01

    REVIEW C 81, 024911 (2010) Identified particle production, azimuthal anisotropy, and interferometry measurements in Au+Au collisions at ?sN N = 9.2 GeV B. I. Abelev,8 M. M. Aggarwal,30 Z. Ahammed,47 A. V. Alakhverdyants,17 B. D. Anderson,18 D.... Arkhipkin,3 G. S. Averichev,17 J. Balewski,22 O. Barannikova,8 L. S. Barnby,2 S. Baumgart,52 D. R. Beavis,3 R. Bellwied,50 F. Benedosso,27 M. J. Betancourt,22 R. R. Betts,8 A. Bhasin,16 A. K. Bhati,30 H. Bichsel,49 J. Bielcik,10 J. Bielcikova,11 B. Biritz...

  8. J/psi production at high transverse momenta in p plus p and Cu plus Cu collisions at root s(NN)=200 Ge

    E-Print Network [OSTI]

    Abelev, B. I.; Aggarwal, M. M.; Ahammed, Z.; Anderson, B. D.; Arkhipkin, D.; Averichev, G. S.; Balewski, J.; Barannikova, O.; Barnby, L. S.; Baudot, J.; Baumgart, S.; Beavis, D. R.; Bellwied, R.; Benedosso, F.; Betancourt, M. J.; Betts, R. R.; Bhasin, A.; Bhati, A. K.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Biritz, B.; Bland, L. C.; Bombara, M.; Bonner, B. E.; Botje, M.; Bouchet, J.; Braidot, E.; Brandin, A. V.; Bruna, E.; Bueltmann, S.; Burton, T. P.; Bystersky, M.; Cai, X. Z.; Caines, H.; Sanchez, M. Calderon de la Barca; Catu, O.; Cebra, D.; Cendejas, R.; Cervantes, M. C.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H. F.; Chen, J. H.; Chen, J. Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Choi, K. E.; Christie, W.; Clarke, R. F.; Codrington, M. J. M.; Corliss, R.; Cormier, T. M.; Cosentino, M. R.; Cramer, J. G.; Crawford, H. J.; Das, D.; Dash, S.; Daugherity, M.; De Silva, L. C.; Dedovich, T. G.; DePhillips, M.; Derevschikov, A. A.; de Souza, R. Derradi; Didenko, L.; Djawotho, P.; Dogra, S. M.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Dunlop, J. C.; Mazumdar, M. R. Dutta; Edwards, W. R.; Efimov, L. G.; Elhalhuli, E.; Elnimr, M.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Eun, L.; Fachini, P.; Fatemi, R.; Fedorisin, J.; Feng, A.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Gagliardi, Carl A.; Gaillard, L.; Gangadharan, D. R.; Ganti, M. S.; Garcia-Solis, E. J.; Geromitsos, A.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gorbunov, Y. N.; Gordon, A.; Grebenyuk, O.; Grosnick, D.; Grube, B.; Guertin, S. M.; Guimaraes, K. S. F. F.; Gupta, A.; Gupta, N.; Guryn, W.; Haag, B.; Hallman, T. J.; Hamed, A.; Harris, J. W.; He, W.; Heinz, M.; Heppelmann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffman, A. M.; Hoffmann, G. W.; Hofman, D. J.; Hollis, R. S.; Huang, H. Z.; Humanic, T. J.; Huo, L.; Igo, G.; Iordanova, A.; Jacobs, P.; Jacobs, W. W.; Jakl, P.; Jena, C.; Jin, F.; Jones, C. L.; Jones, P. G.; Joseph, J.; Judd, E. G.; Kabana, S.; Kajimoto, K.; Kang, K.; Kapitan, J.; Keane, D.; Kechechyan, A.; Kettler, D.; Khodyrev, V. Yu; Kikola, D. P.; Kiryluk, J.; Kisiel, A.; Klein, S. R.; Knospe, A. G.; Kocoloski, A.; Koetke, D. D.; Kopytine, M.; Korsch, W.; Kotchenda, L.; Kouchpil, V.; Kravtsov, P.; Kravtsov, V. I.; Krueger, K.; Krus, M.; Kuhn, C.; Kumar, L.; Kurnadi, P.; Lamont, M. A. C.; Landgraf, J. M.; LaPointe, S.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, C. -H; Lee, J. H.; Leight, W.; LeVine, M. J.; Li, C.; Li, N.; Li, Y.; Lin, G.; Lindenbaum, S. J.; Lisa, M. A.; Liu, F.; Liu, J.; Liu, L.; Ljubicic, T.; Llope, W. J.; Longacre, R. S.; Love, W. A.; Lu, Y.; Ludlam, T.; Ma, G. L.; Ma, Y. G.; Mahapatra, D. P.; Majka, R.; Mall, O. I.; Mangotra, L. K.; Manweiler, R.; Margetis, S.; Markert, C.; Matis, H. S.; Matulenko, Yu A.; McDonald, D.; McShane, T. S.; Meschanin, A.; Milner, R.; Minaev, N. G.; Mioduszewski, Saskia; Mischke, A.; Mohanty, B.; Morozov, D. A.; Munhoz, M. G.; Nandi, B. K.; Nattrass, C.; Nayak, T. K.; Nelson, J. M.; Netrakanti, P. K.; Ng, M. J.; Nogach, L. V.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Okada, H.; Okorokov, V.; Olson, D.; Pachr, M.; Page, B. S.; Pal, S. K.; Pandit, Y.; Panebratsev, Y.; Pawlak, T.; Peitzmann, T.; Perevoztchikov, V.; Perkins, C.; Peryt, W.; Phatak, S. C.; Pile, P.; Planinic, M.; Pluta, J.; Plyku, D.; Poljak, N.; Poskanzer, A. M.; Potukuchi, B. V. K. S.; Prindle, D.; Pruneau, C.; Pruthi, N. K.; Pujahari, P. R.; Putschke, J.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Redwine, R.; Reed, R.; Ridiger, A.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Rose, A.; Roy, C.; Ruan, L.; Russcher, M. J.; Sahoo, R.; Sakrejda, I.; Sakuma, T.; Salur, S.; Sandweiss, J.; Sarsour, M.; Schambach, J.; Scharenberg, R. P.; Schmitz, N.; Seger, J.; Selyuzhenkov, I.; Seyboth, P.; Shabetai, A.; Shahaliev, E.; Shao, M.; Sharma, M.; Shi, S. S.; Shi, X. -H; Sichtermann, E. P.; Simon, F.; Singaraju, R. N.; Skoby, M. J.; Smirnov, N.; Snellings, R.; Sorensen, P.; Sowinski, J.; Spinka, H. M.; Srivastava, B.; Stadnik, A.; Stanislaus, T. D. S.; Staszak, D.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Suarez, M. C.; Subba, N. L.; Sumbera, M.; Sun, X. M.; Sun, Y.; Sun, Z.; Surrow, B.; Symons, T. J. M.; de Toledo, A. Szanto; Takahashi, J.; Tang, A. H.; Tang, Z.; Tarini, L. H.; Tarnowsky, T.; Thein, D.; Thomas, J. H.; Tian, J.; Timmins, A. R.; Timoshenko, S.; Tlusty, D.; Tokarev, M.; Trainor, T. A.; Tram, V. N.; Trattner, A. L.; Trentalange, S.; Tribble, Robert E.; Tsai, O. D.; Ulery, J.; Ullrich, T.; Underwood, D. G.; Van Buren, G.; Van Leeuwen, M.; Molen, A. M. Vander; Vanfossen, J. A., Jr.; Varma, R.; Vasconcelos, G. M. S.; Vasilevski, I. M.; Vasiliev, A. N.; Videbaek, F.; Vigdor, S. E.; Viyogi, Y. P.; Vokal, S.; Voloshin, S. A.

    2009-01-01

    COMMUNICATIONS PHYSICAL REVIEW C 80, 041902(R) (2009) J/? production at high transverse momenta in p + p and Cu + Cu collisions at ?sN N = 200 GeV B. I. Abelev,8 M. M. Aggarwal,30 Z. Ahammed,47 B. D. Anderson,18 D. Arkhipkin,12 G. S. Averichev,11 J. Balewski...,22 O. Barannikova,8 L. S. Barnby,2 J. Baudot,16 S. Baumgart,52 D. R. Beavis,3 R. Bellwied,50 F. Benedosso,27 M. J. Betancourt,22 R. R. Betts,8 A. Bhasin,17 A. K. Bhati,30 H. Bichsel,49 J. Bielcik,10 J. Bielcikova,10 B. Biritz,6 L. C. Bland,3 M...

  9. Observation of pi(+)pi(-)pi(+)pi(-) photoproduction in ultraperipheral heavy-ion collisions at root s(NN)=200 GeV at the STAR detector 

    E-Print Network [OSTI]

    Abelev, B. I.; Aggarwal, M. M.; Ahammed, Z.; Alakhverdyants, A. V.; Anderson, B. D.; Arkhipkin, D.; Averichev, G. S.; Balewski, J.; Barnby, L. S.; Baumgart, S.; Beavis, D. R.; Bellwied, R.; Benedosso, F.; Betancourt, M. J.; Betts, R. R.; Bhasin, A.; Bhati, A. K.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Biritz, B.; Bland, L. C.; Bonner, B. E.; Bouchet, J.; Braidot, E.; Brandin, A. V.; Bridgeman, A.; Bruna, E.; Bueltmann, S.; Bunzarov, I.; Burton, T. P.; Cai, X. Z.; Caines, H.; Sanchez, M. Calderon de la Barca; Catu, O.; Cebra, D.; Cendejas, R.; Cervantes, M. C.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H. F.; Chen, J. H.; Chen, J. Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Choi, K. E.; Christie, W.; Chung, P.; Chung, S. U.; Clarke, R. F.; Codrington, M. J. M.; Corliss, R.; Cramer, J. G.; Crawford, H. J.; Das, D.; Dash, S.; Leyva, A. Davila; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; DePhillips, M.; Derevschikov, A. A.; de Souza, R. Derradi; Didenko, L.; Djawotho, P.; Dogra, S. M.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Dunlop, J. C.; Mazumdar, M. R. Dutta; Efimov, L. G.; Elhalhuli, E.; Elnimr, M.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Eun, L.; Evdokimov, O.; Fachini, P.; Fatemi, R.; Fedorisin, J.; Fersch, R. G.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Gagliardi, Carl A.; Gangadharan, D. R.; Ganti, M. S.; Garcia-Solis, E. J.; Geromitsos, A.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gorbunov, Y. N.; Gordon, A.; Grebenyuk, O.; Grosnick, D.; Grube, B.; Guertin, S. M.; Gupta, A.; Gupta, N.; Guryn, W.; Haag, B.; Hallman, T. J.; Hamed, A.; Han, L. -X; Harris, J. W.; Hays-Wehle, J. P.; Heinz, M.; Heppelmann, S.; Hirsch, A.; Hjort, E.; Hoffman, A. M.; Hoffmann, G. W.; Hofman, D. J.; Hollis, R. S.; Huang, H. Z.; Humanic, T. J.; Huo, L.; Igo, G.; Iordanova, A.; Jacobs, P.; Jacobs, W. W.; Jakl, P.; Jena, C.; Jin, F.; Jones, C. L.; Jones, P. G.; Joseph, J.; Judd, E. G.; Kabana, S.; Kajimoto, K.; Kang, K.; Kapitan, J.; Kauder, K.; Keane, D.; Kechechyan, A.; Kettler, D.; Kikola, D. P.; Kiryluk, J.; Kisiel, A.; Klein, S. R.; Knospe, A. G.; Kocoloski, A.; Koetke, D. D.; Kollegger, T.; Konzer, J.; Kopytine, M.; Koralt, I.; Korsch, W.; Kotchenda, L.; Kouchpil, V.; Kravtsov, P.; Krueger, K.; Krus, M.; Kumar, L.; Kurnadi, P.; Lamont, M. A. C.; Landgraf, J. M.; LaPointe, S.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, C. -H; Lee, J. H.; Leight, W.; LeVine, M. J.; Li, C.; Li, L.; Li, N.; Li, W.; Li, X.; Li, X.; Li, Y.; Li, Z.; Lin, G.; Lindenbaum, S. J.; Lisa, M. A.; Liu, F.; Liu, H.; Liu, J.; Ljubicic, T.; Llope, W. J.; Longacre, R. S.; Love, W. A.; Lu, Y.; Ma, G. L.; Ma, Y. G.; Mahapatra, D. P.; Majka, R.; Mall, O. I.; Mangotra, L. K.; Manweiler, R.; Margetis, S.; Markert, C.; Masui, H.; Matis, H. S.; Matulenko, Yu A.; McDonald, D.; McShane, T. S.; Meschanin, A.; Milner, R.; Minaev, N. G.; Mioduszewski, Saskia; Mischke, A.; Mitrovski, M. K.; Mohanty, B.; Mondal, M. M.; Morozov, D. A.; Munhoz, M. G.; Nandi, B. K.; Nattrass, C.; Nayak, T. K.; Nelson, J. M.; Netrakanti, P. K.; Ng, M. J.; Nogach, L. V.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Okada, H.; Okorokov, V.; Olson, D.; Pachr, M.; Page, B. S.; Pal, S. K.; Pandit, Y.; Panebratsev, Y.; Pawlak, T.; Peitzmann, T.; Perevoztchikov, V.; Perkins, C.; Peryt, W.; Phatak, S. C.; Pile, P.; Planinic, M.; Ploskon, M. A.; Pluta, J.; Plyku, D.; Poljak, N.; Poskanzer, A. M.; Potukuchi, B. V. K. S.; Powell, C. B.; Prindle, D.; Pruneau, C.; Pruthi, N. K.; Pujahari, P. R.; Putschke, J.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Redwine, R.; Reed, R.; Rehberg, J. M.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Rose, A.; Roy, C.; Ruan, L.; Russcher, M. J.; Sahoo, R.; Sakai, S.; Sakrejda, I.; Sakuma, T.; Salur, S.; Sandweiss, J.; Sangaline, E.; Schambach, J.; Scharenberg, R. P.; Schmitz, N.; Schuster, T. R.; Seele, J.; Seger, J.; Selyuzhenkov, I.; Seyboth, P.; Shahaliev, E.; Shao, M.; Sharma, M.; Shi, S. S.; Sichtermann, E. P.; Simon, F.; Singaraju, R. N.; Skoby, M. J.; Smirnov, N.; Sorensen, P.; Sowinski, J.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Staszak, D.; Stevens, J. R.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Suarez, M. C.; Subba, N. L.; Sumbera, M.; Sun, X. M.; Sun, Y.; Sun, Z.; Surrow, B.; Symons, T. J. M.; de Toledo, A. Szanto; Takahashi, J.; Tang, A. H.; Tang, Z.; Tarini, L. H.; Tarnowsky, T.; Thein, D.; Thomas, J. H.; Tian, J.; Timmins, A. R.; Timoshenko, S.; Tlusty, D.; Tokarev, M.; Trainor, T. A.; Tram, V. N.; Trentalange, S.; Tribble, Robert E.; Tsai, O. D.; Ulery, J.; Ullrich, T.; Underwood, D. G.; Van Buren, G.; van Nieuwenhuizen, G.; Vanfossen, J. A., Jr.; Varma, R.; Vasconcelos, G. M. S.; Vasiliev, A. N.; Videbaek, F.; Viyogi, Y. P.; Vokal, S.

    2010-01-01

    REVIEW C 81, 044901 (2010) Observation of pi+pi?pi+pi? photoproduction in ultraperipheral heavy-ion collisions at ? sN N = 200 GeV at the STAR detector B. I. Abelev,8 M. M. Aggarwal,30 Z. Ahammed,47 A. V. Alakhverdyants,17 B. D. Anderson,18 D.... Arkhipkin,3 G. S. Averichev,17 J. Balewski,22 L. S. Barnby,2 S. Baumgart,52 D. R. Beavis,3 R. Bellwied,50 F. Benedosso,27 M. J. Betancourt,22 R. R. Betts,8 A. Bhasin,16 A. K. Bhati,30 H. Bichsel,49 J. Bielcik,10 J. Bielcikova,11 B. Biritz,6 L. C. Bland,3 B...

  10. Strange and multistrange particle production in Au plus Au collisions at root s(NN)=62.4 Ge

    E-Print Network [OSTI]

    Aggarwal, M. M.; Ahammed, Z.; Alakhverdyants, A. V.; Alekseev, I.; Alford, J.; Anderson, B. D.; Anson, C. D.; Arkhipkin, D.; Averichev, G. S.; Balewski, J.; Beavis, D. R.; Bellwied, R.; Betancourt, M. J.; Betts, R. R.; Bhasin, A.; Bhati, A. K.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Biritz, B.; Bland, L. C.; Borowski, W.; Bouchet, J.; Braidot, E.; Brandin, A. V.; Bridgeman, A.; Brovko, S. G.; Bruna, E.; Bueltmann, S.; Bunzarov, I.; Burton, T. P.; Cai, X. Z.; Caines, H.; Sanchez, M. Calderon de la Barca; Cebra, D.; Cendejas, R.; Cervantes, M. C.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H. F.; Chen, J. H.; Chen, J. Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Choi, K. E.; Christie, W.; Chung, P.; Codrington, M. J. M.; Corliss, R.; Cramer, J. G.; Crawford, H. J.; Dash, S.; Leyva, A. Davila; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; Derevschikov, A. A.; Derradi de Souza, R.; Didenko, L.; Djawotho, P.; Dogra, S. M.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Dunlop, J. C.; Mazumdar, M. R. Dutta; Efimov, L. G.; Elnimr, M.; Engelage, J.; Eppley, G.; Estienne, M.; Eun, L.; Evdokimov, O.; Fatemi, R.; Fedorisin, J.; Fersch, R. G.; Finch, E.; Fine, V.; Fisyak, Y.; Gagliardi, Carl A.; Gangadharan, D. R.; Geromitsos, A.; Geurts, F.; Ghosh, P.; Gorbunov, Y. N.; Gordon, A.; Grebenyuk, O.; Grosnick, D.; Guertin, S. M.; Gupta, A.; Guryn, W.; Haag, B.; Hajkova, O.; Hamed, A.; Han, L-X; Harris, J. W.; Hays-Wehle, J. P.; Heinz, M.; Heppelmann, S.; Hirsch, A.; Hjort, E.; Hoffmann, G. W.; Hofman, D. J.; Huang, B.; Huang, H. Z.; Humanic, T. J.; Huo, L.; Igo, G.; Jacobs, P.; Jacobs, W. W.; Jena, C.; Jin, F.; Joseph, J.; Judd, E. G.; Kabana, S.; Kang, K.; Kapitan, J.; Kauder, K.; Keane, D.; Kechechyan, A.; Kettler, D.; Kikola, D. P.; Kiryluk, J.; Kisiel, A.; Kizka, V.; Klein, S. R.; Knospe, A. G.; Koetke, D. D.; Kollegger, T.; Konzer, J.; Koralt, I.; Koroleva, L.; Korsch, W.; Kotchenda, L.; Kouchpil, V.; Kravtsov, P.; Krueger, K.; Krus, M.; Kumar, L.; Kurnadi, P.; Lamont, M. A. C.; Landgraf, J. M.; LaPointe, S.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, J. H.; Leight, W.; LeVine, M. J.; Li, C.; Li, L.; Li, N.; Li, W.; Li, X.; Li, X.; Li, Y.; Li, Z. M.; Lisa, M. A.; Liu, F.; Liu, H.; Liu, J.; Ljubicic, T.; Llope, W. J.; Longacre, R. S.; Love, W. A.; Lu, Y.; Lukashov, E. V.; Luo, X.; Ma, G. L.; Ma, Y. G.; Mahapatra, D. P.; Majka, R.; Mall, O. I.; Mangotra, L. K.; Manweiler, R.; Margetis, S.; Markert, C.; Masui, H.; Matis, H. S.; Matulenko, Yu A.; McDonald, D.; McShane, T. S.; Meschanin, A.; Milner, R.; Minaev, N. G.; Mioduszewski, Saskia; Mischke, A.; Mitrovski, M. K.; Mohanty, B.; Mondal, M. M.; Morozov, B.; Morozov, D. A.; Munhoz, M. G.; Naglis, M.; Nandi, B. K.; Nayak, T. K.; Netrakanti, P. K.; Ng, M. J.; Nogach, L. V.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Oh, K.; Ohlson, A.; Okorokov, V.; Oldag, E. W.; Olson, D.; Pachr, M.; Page, B. S.; Pal, S. K.; Pandit, Y.; Panebratsev, Y.; Pawlak, T.; Pei, H.; Peitzmann, T.; Perkins, C.; Peryt, W.; Phatak, S. C.; Pile, P.; Planinic, M.; Ploskon, M. A.; Pluta, J.; Plyku, D.; Poljak, N.; Poskanzer, A. M.; Potukuchi, B. V. K. S.; Powell, C. B.; Prindle, D.; Pruneau, C.; Pruthi, N. K.; Pujahari, P. R.; Putschke, J.; Qiu, H.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Redwine, R.; Reed, R.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Rose, A.; Ruan, L.; Rusnak, J.; Sakai, S.; Sakrejda, I.; Sakuma, T.; Salur, S.; Sandweiss, J.; Sangaline, E.; Schambach, J.; Scharenberg, R. P.; Schmah, A. M.; Schmitz, N.; Schuster, T. R.; Seele, J.; Seger, J.; Selyuzhenkov, I.; Seyboth, P.; Shahaliev, E.; Shao, M.; Sharma, M.; Shi, S. S.; Sichtermann, E. P.; Simon, F.; Singaraju, R. N.; Skoby, M. J.; Smirnov, N.; Sorensen, P.; Speltz, J.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Staszak, D.; Steadman, S. G.; Stevens, J. R.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Suarez, M. C.; Subba, N. L.; Sumbera, M.; Sun, X. M.; Sun, Y.; Sun, Z.; Surrow, B.; Svirida, D. N.; Symons, T. J. M.; Szanto de Toledo, A.; Takahashi, J.; Tang, A. H.; Tang, Z.; Tarini, L. H.; Tarnowsky, T.; Thein, D.; Thomas, J. H.; Tian, J.; Timmins, A. R.; Tlusty, D.; Tokarev, M.; Trainor, T. A.; Tram, V. N.; Trentalange, S.; Tribble, Robert E.; Tribedy, P.; Tsai, O. D.; Ullrich, T.; Underwood, D. G.; Van Buren, G.; van Nieuwenhuizen, G.; Vanfossen, J. A., Jr.; Varma, R.; Vasconcelos, G. M. S.; Vasiliev, A. N.; Videbaek, F.; Viyogi, Y. P.; Vokal, S.; Voloshin, S. A.; Wada, M.; Walker, M.; Wang, F.; Wang, G.; Wang, H.; Wang, J. S.; Wang, Q.; Wang, X. L.; Wang, Y.; Webb, G.; Webb, J. C.; Westfall, G. D.; Whitten, C., Jr.; Wieman, H.; Wissink, S. W.; Witt, R.; Witzke, W.; Wu, Y. F.; Xie, W.; Xu, H.; Xu, N.; Xu, Q. H.; Xu, W.; Xu, Y.; Xu, Z.; Xue, L.; Yang, Y.; Yepes, P.

    2011-01-01

    REVIEW C 83, 024901 (2011) Strange and multistrange particle production in Au+Au collisions at ?sN N = 62.4 GeV M. M. Aggarwal,29 Z. Ahammed,21 A. V. Alakhverdyants,17 I. Alekseev,15 J. Alford,18 B. D. Anderson,18 C. D. Anson,27 D. Arkhipkin,2 G. S.... Averichev,17 J. Balewski,22 D. R. Beavis,2 R. Bellwied,49 M. J. Betancourt,22 R. R. Betts,7 A. Bhasin,16 A. K. Bhati,29 H. Bichsel,48 J. Bielcik,9 J. Bielcikova,10 B. Biritz,5 L. C. Bland,2 W. Borowski,40 J. Bouchet,18 E. Braidot,26 A. V. Brandin,25 A...

  11. In Search of Cyclohexane-like Sn6 12-: Synthesis of Li2Ln5Sn7 (Ln ) Ce,

    E-Print Network [OSTI]

    such as the alkali, alkaline-earth, and rare-earth elements with less electropos- itive metals or semimetals state for the rare-earth cations and, therefore, 17 available electrons from the cations per formula), alkaline-earth (Ae) or lanthanide metal (Ln), and Sn.2 Most of the structures in this system are directly

  12. Optical and near-infrared observations of SN 2013dx associated with GRB 130702A

    E-Print Network [OSTI]

    Toy, V L; Silverman, J M; Butler, N R; Cucchiara, A; Watson, A M; Bersier, D; Perley, D A; Margutti, R; Bellm, E; Bloom, J S; Cao, Y; Capone, J I; Clubb, K; Corsi, A; de Diego, J A; Filippenko, A V; Fox, O D; Gal-Yam, A; Gehrels, N; Georgiev, L; González, J J; Kasliwal, M M; Kelly, P L; Kulkarni, S R; Kutyrev, A S; Lee, W H; Prochaska, J X; Ramirez-Ruiz, E; Richer, M G; Román, C; Singer, L; Stern, D; Troja, E; Veilleux, S

    2015-01-01

    We present optical and near-infrared light curves and optical spectra of SN 2013dx, associated with the nearby (redshift 0.145) gamma-ray burst GRB 130702A. The prompt isotropic gamma-ray energy released from GRB 130702A is measured to be $E_{\\gamma,\\mathrm{iso}} = 6.4_{-1.0}^{+1.3} \\times 10^{50}$erg (1keV to 10MeV in the rest frame), placing it intermediate between low-luminosity GRBs like GRB 980425/SN 1998bw and the broader cosmological population. We compare the observed $g^{\\prime}r^{\\prime}i^{\\prime}z^{\\prime}$ light curves of SN 2013dx to a SN 1998bw template, finding that SN 2013dx evolves $\\sim20$% faster (steeper rise time), with a comparable peak luminosity. Spectroscopically, SN 2013dx resembles other broad-lined Type Ic supernovae, both associated with (SN 2006aj and SN 1998bw) and lacking (SN 1997ef, SN 2007I, and SN 2010ah) gamma-ray emission, with photospheric velocities around peak of $\\sim$21,000 km s$^{-1}$. We construct a quasi-bolometric ($g^{\\prime}r^{\\prime}i^{\\prime}z^{\\prime}yJH$) li...

  13. Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties

    SciTech Connect (OSTI)

    Gatti, E., E-mail: eleonora.gatti@mater.unimib.it; Pezzoli, F.; Grilli, E. [L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, via Cozzi 55, I-20125 Milano (Italy); Isa, F.; Chrastina, D.; Isella, G. [L-NESS and Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, I - 22100 Como (Italy); Müller Gubler, E. [Electron Microscopy Center of ETH Zürich (EMEZ), August-Piccard-Hof 1, CH-8093 Zürich (Switzerland)

    2014-07-28

    The epitaxial growth of Ge/Si{sub 0.15}Ge{sub 0.85} multiple quantum wells (MQWs) on Si(111) substrates is demonstrated. A 3??m thick reverse, double-step virtual substrate with a final composition of Si{sub 0.10}Ge{sub 0.90} has been employed. High resolution XRD, TEM, AFM and defect etching analysis has been used for the study of the structural properties of the buffer and of the QWs. The QW stack is characterized by a threading dislocation density of about 3?×?10{sup 7?}cm{sup ?2} and an interdiffusion layer at the well/barrier interface of 2.1?nm. The quantum confined energy levels of this system have been calculated using the k·p and effective mass approximation methods. The Ge/Si{sub 0.15}Ge{sub 0.85} MQWs have been characterized through absorption and photoluminescence measurements. The optical spectra have been compared with those of Ge/Si{sub 0.15}Ge{sub 0.85} QWs grown on Si(001) through a thick graded virtual substrate.

  14. Optical Link on Silicon Employing Ge/SiGe Quantum Well Structures Onur Fidaner, Ali K. Okyay, Jonathan E. Roth, Rebecca K. Scheavitz, Yu-Hsuan Kuo*

    E-Print Network [OSTI]

    Miller, David A. B.

    Optical Link on Silicon Employing Ge/SiGe Quantum Well Structures Onur Fidaner, Ali K. Okyay University, Taipei, Taiwan Abstract: We demonstrate an optical link on silicon employing Ge/SiGe quantum well of the quantum-confined Stark effect (QCSE) on silicon using Ge/SiGe quantum wells opened up the possibility

  15. 23 6 12 8:00 III-V/Ge CMOS

    E-Print Network [OSTI]

    Katsumoto, Shingo

    23 6 12 8:00 - 1 - 1. : III-V/Ge CMOS ~ 200%~ 2. : III-V (Ge) III-V/Ge CMOS (Si) 200% III-V/Ge CMOS 200% III-V/Ge CMOS () () () () III-V III-V/Ge CMOS (1) III-V Ge III-V/Ge CMOS (2) III-V-OI MOSFET (3) III-V/Ge CMOS "2011 Symposia on VLSI

  16. Measurement of the neutron-capture cross section of ??Ge and ??Ge below 15 MeV and its relevance to 0??? decay searches of ??Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bhike, Megha; Fallin, B.; Tornow, W.

    2015-02-01

    The neutron radiative-capture cross section of ??Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of ~86% ??Ge and ~14% ??Ge used in the 0??? searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the ³H(p,n)³He, ²H(d,n)³He and ³H(d,n)?He reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for ??Ge at neutron energies below 8 MeV. Indium and gold foils were irradiated simultaneously for neutron fluence determination. High-resolution ?-ray spectroscopy wasmore »used to determine the ?-ray activity of the daughter nuclei of interest. For the ??Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the ??Ge(n,?)??Ge reaction, the present data are about a factor of two larger than predicted. It was found that the ??Ge(n,?)??Ge yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the ??Ge(n,?)??Ge yield due to the larger cross section of the former reaction.« less

  17. Charging properties of cassiterite (alfa-SnO2) surfaces

    SciTech Connect (OSTI)

    Rosenqvist, Jorgen K; Machesky, Michael L.; Vlcek, L.; Cummings, Peter T; Wesolowski, David J

    2009-01-01

    The acid-base properties of cassiterite (alfa-SnO2) surfaces at 10 50 C were studied using potentiometric titrations of powder suspensions in aqueous NaCl and RbCl media. The proton sorption isotherms exhibited common intersection points in the pH-range 4.0 to 4.5 at all conditions and the magnitude of charging was similar but not identical in NaCl and RbCl. The hydrogen bonding configuration at the oxide-water interface, obtained from classical Molecular Dynamics (MD) simulations, was analyzed in detail and the results were explicitly incorporated in calculations of protonation constants for the reactive surface sites using the revised MUSIC model. The calculations indicated that the terminal SnOH2 group is more acidic than the bridging Sn2OH group, with protonation constants (log KH) of 3.60 and 5.13 at 25 C, respectively. This is contrary to the situation on the isostructural alfa-TiO2 (rutile), apparently due to the difference in electronegativity between Ti and Sn. MD simulations and speciation calculations indicated considerable differences in the speciation of Na+ and Rb+, despite the similarities in overall charging. Adsorbed sodium ions are almost exclusively found in bidentate surface complexes, while adsorbed rubidium ions form comparable amounts of bidentate and tetradentate complexes. Also, the distribution of adsorbed Na+ between the different complexes shows a considerable dependence on surface charge density (pH), while the distribution of adsorbed Rb+ is almost independent of pH. A Surface Complexation Model (SCM) capable of accurately describing both the measured surface charge and the MD predicted speciation of adsorbed Na+/Rb+ was formulated. According to the SCM, the deprotonated terminal group (SnOH-0.40) and the protonated bridging group (Sn2OH+0.36) dominate the surface speciation over the entire pH-range (2.7 10), illustrating the ability of positively and negatively charged surface groups to coexist. Complexation of the medium cations increases significantly with increasing negative surface charge and at pH 10 roughly 40 percent of the terminal sites are predicted to form cation complexes, while anion complexation is minor throughout the studied pH-range.

  18. Phase transitions in Ge-Sb phase change materials

    SciTech Connect (OSTI)

    Raoux, Simone; Virwani, Kumar; Hitzbleck, Martina; Salinga, Martin; Madan, Anita; Pinto, Teresa L.

    2009-03-15

    Thin films of the phase change material Ge-Sb with Ge concentrations between 7.3 and 81.1 at. % were deposited by cosputtering from elemental targets. Their crystallization behavior was studied using time-resolved x-ray diffraction, Auger electron spectroscopy, differential scanning calorimetry, x-ray reflectivity, profilometry, optical reflectivity, and resistivity versus temperature measurements. It was found that the crystallization temperature increases with Ge content. Calculations of the glass transition temperature (which is a lower limit for the crystallization temperature T{sub x}) also show an increase with Ge concentration closely tracking the measured values of T{sub x}. For low Ge content samples, Sb x-ray diffraction peaks occurred during a heating ramp at lower temperature than Ge diffraction peaks. The appearance of Ge peaks is related to Ge precipitation and agglomeration. For Ge concentrations of 59.3 at. % and higher, Sb and Ge peaks occurred at the same temperature. Upon crystallization, film mass density and optical reflectivity increase as well as electrical contrast (ratio of resistivity in amorphous phase to crystalline phase) all showed a maximum for the eutectic alloy (14.5 at. % Ge). For the alloy with 59.3 at. % Ge there was very little change in any of these parameters, while the alloy with 81.1 at. % Ge behaved opposite to a typical phase change alloy and showed reduced mass density and reflectivity and increased resistivity.

  19. Updated 8/28/2014 New GE Requirements & Environmental Studies Advising

    E-Print Network [OSTI]

    Updated 8/28/2014 New GE Requirements & Environmental Studies Advising Course Concentration(s) Lower Division GE Upper Division GE Overlay(s) AIS 310

  20. GE Lighting Solutions: Order (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE ordered General Electric Lighting Solutions, LLC to pay a $5,360 civil penalty after finding GE Lighting Solutions had manufactured and distributed in commerce in the U.S. 30 units of basic model DR4-RTFB-23B and 177 units (of which 85 units remain in inventory) of basic model DR4-RTFB-77A-002, noncompliant traffic signal modules.

  1. Viscosity Measurement G.E. Leblanc

    E-Print Network [OSTI]

    Kostic, Milivoje M.

    30 Viscosity Measurement G.E. Leblanc McMaster University R.A. Secco The University of Western and Non-Newtonian Fluids l Dimensions and Units of Viscosity l Viscometer Types l Capillary M. Kostic must be supplied (1) to create viscous flow units by breaking bonds between atoms and molecules, and (2

  2. Effects of Ge replacement in GeTe by [Ag+Sb] on thermoelectric...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in GeTe by Ag+Sb on thermoelectric properties and NMR spectra Requirements for student: general physics and chemistry courses, and desire to work in experimental laboratory. This...

  3. Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

    SciTech Connect (OSTI)

    Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel, E-mail: daniel.chrastina@polimi.it; Mondiali, Valeria; Isella, Giovanni [L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, 22100 Como (Italy); Bollani, Monica [IFN-CNR, L-NESS, via Anzani 42, 22100 Como (Italy)

    2014-09-21

    We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4 GPa of tensile stress to be obtained.

  4. GE partners with 'Girls Who Code' for summer program | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    offered 19 programs and counted 375 participants; this year, Girls Who Code will offer 60 programs reaching close to 1,200 girls in nine cities nationwide. GE joins other...

  5. Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab May 24, 2012 - 10:54am Addthis...

  6. Butterfly-Inspired Thermal Imaging | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Innovation and Manufacturing in Europe 2-4-13-v-3d-printing-medical-devices Additive Manufacturing Demonstration at GE Global Research 2-3-10-v Crowdsourcing...

  7. What Happens in Research-Based Design | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    paths we have at GE Global Research ("GE Leaders are Researchers Too",). The field of gas turbine heat transfer is growing in importance, and as a result, we have a lot of job...

  8. Novel approaches to low temperature transient liquid phase bonding in the In-Sn/Cu and In-Sn-Bi/Cu systems

    E-Print Network [OSTI]

    Fischer, David S., Ph. D. Massachusetts Institute of Technology

    2008-01-01

    A fluxless low temperature transient liquid phase (LTTLP) bonding process was studied as a method of producing Cu/Cu joints below 125°C and 75°C using interlayer alloys from the In-Sn and In-Sn-Bi systems. Using thermodynamic ...

  9. Dipole polarizability of 120Sn and nuclear energy density functionals

    E-Print Network [OSTI]

    T. Hashimoto; A. M. Krumbholz; P. -G. Reinhard; A. Tamii; P. von Neumann-Cosel; T. Adachi; N. Aoi; C. A. Bertulani; H. Fujita; Y. Fujita; E. Ganio?lu; K. Hatanaka; C. Iwamoto; T. Kawabata; N. T. Khai; A. Krugmann; D. Martin; H. Matsubara; K. Miki; R. Neveling; H. Okamura; H. J. Ong; I. Poltoratska; V. Yu. Ponomarev; A. Richter; H. Sakaguchi; Y. Shimbara; Y. Shimizu; J. Simonis; F. D. Smit; G. Süsoy; J. H. Thies; T. Suzuki; M. Yosoi; J. Zenihiro

    2015-03-28

    The electric dipole strength distribution in 120Sn between 5 and 22 MeV has been determined at RCNP Osaka from a polarization transfer analysis of proton inelastic scattering at E_0 = 295 MeV and forward angles including 0{\\deg}. Combined with photoabsorption data an electric dipole polarizability alpha_D(120Sn) = 8.93(36) fm^3 is extracted. The correlation of this value with alpha_D for 208Pb serves as a test of energy density functionals (EDFs). The majority of models based on Skyrme interactions can describe the data while relativistic approaches fail. The accuracy of the experimental results provides important constraints on the static isovector properties of EDFs used to predict symmetry energy parameters and the neutron skin thickness of nuclei.

  10. Synthesis of SnO{sub 2} Nanoparticles Using Ultrasonication

    SciTech Connect (OSTI)

    Majumdar, Sanhita; Devi, P. Sujatha

    2010-10-04

    The use of ultrasonic energy for chemical synthesis has recently become an interesting and growing area of research. Using this form of energy, we have synthesized nanoparticles of SnO{sub 2}(8-30 nm) at room temperature by a sonication assisted precipitation technique. In order to understand the effect of ultrasonic energy on particle size and their distribution, the precipitation time was varied during the preparation. A sonication time of 3 h was found to be optimum to produce SnO{sub 2} nanoparticles having size below 10 nm. We found that a gradual increase of the sonication time gradually decreases the particle size with interesting morphology and increased surface area. The butane sensing properties of the synthesized powders exhibited a direct influence of the sonication time on the sensing properties. A 3 h sonicated sample, exhibited a maximum response of around 98.88% towards 5000 ppm butane at 450 deg. C with a fast recovery time.

  11. Optical properties of SnO{sub 2} nanoparticles

    SciTech Connect (OSTI)

    Koshy, Jiji, E-mail: drkcgeorge@gmail.com; Chandran, Anoop, E-mail: drkcgeorge@gmail.com; Samuel, Soosen, E-mail: drkcgeorge@gmail.com; George, K. C., E-mail: drkcgeorge@gmail.com [Department of Physics S.B.College Changanassery, Kerala, 686101 (India)

    2014-10-15

    SnO{sub 2} nanoparticles were successfully prepared by a sol-gel technique. The samples were analyzed by XRD, SEM, TEM, UV, Photoluminescence (PL) and Raman studies. The obtained product has a particle size of 12 nm with absorption peak at 278 nm. The absorption peak shows a blue shift when compared to the bulk due to quantum confinement. The FTIR spectrum of the prepared SnO{sub 2} nanoparticles exhibits a broad absorption band between 3100 and 3400 cm{sup ?1} as well as a narrower peak at 1600 cm{sup ?1}. The PL spectrum shows two strong peaks at 420 and 484 nm and broad peak between 430 and 470 nm.

  12. Low-energy electric dipole response in 120Sn

    E-Print Network [OSTI]

    A. M. Krumbholz; P. von Neumann-Cosel; T. Hashimoto; A. Tamii; T. Adachi; C. A. Bertulani; H. Fujita; Y. Fujita; E. Ganioglu; K. Hatanaka; C. Iwamoto; T. Kawabata; N. T. Khai; A. Krugmann; D. Martin; H. Matsubara; R. Neveling; H. Okamura; H. J. Ong; I. Poltoratska; V. Yu. Ponomarev; A. Richter; H. Sakaguchi; Y. Shimbara; Y. Shimizu; J. Simonis; F. D. Smit; G. Susoy; J. H. Thies; T. Suzuki; M. Yosoi; J. Zenihiro

    2015-03-04

    The electric dipole strength in 120Sn has been extracted from proton inelastic scattering experiments at E_p = 295 MeV and at forward angles including 0 degree. Below neutron threshoild it differs from the results of a 120Sn(gamma,gamma') experiment and peaks at an excitation energy of 8.3 MeV. The total strength corresponds to 2.3(2)% of the energy-weighted sum rule and is more than three times larger than what is observed with the (gamma,gamma') reaction. This implies a strong fragmentation of the E1 strength and/or small ground state branching ratios of the excited 1- states.

  13. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect (OSTI)

    Norris, D. J.; Qiu, Y.; Walther, T. [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Building, Mappin Street, Sheffield S1 3JD (United Kingdom); Dobbie, A.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7A (United Kingdom)

    2014-01-07

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1?x}Ge{sub x} alloys for germanium concentrations x???0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28?Ge is ±(0.2–0.3) ML. Modelling shows that of the amount of germanium deposited, 0.7 ML segregate towards the free surface so that only ?2.3/x ML are directly incorporated in the layer within a few nanometres, in good agreement with our measurements. For pure Ge (x?=?1), this thickness is smaller than most values quoted in the literature, which we attribute to the high sensitivity of our method to fractional monolayer changes in the effective chemical width of such thin layers.

  14. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-02-05

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore »dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

  15. Thin SiGe virtual substrates for Ge heterostructures integration on silicon

    SciTech Connect (OSTI)

    Cecchi, S., E-mail: stefano.cecchi@mdm.imm.cnr.it; Chrastina, D.; Frigerio, J.; Isella, G. [L-NESS, Dipartimento di Fisica, Politecnico di Milano–Polo Territoriale di Como, Via Anzani 42, I-22100 Como (Italy); Gatti, E.; Guzzi, M. [L-NESS, Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, via Cozzi 53, I-20126 Milano (Italy); Müller Gubler, E. [Electron Microscopy ETH Zurich, ETH Zurich, Auguste-Piccard-Hof 1, CH-8093 Zurich (Switzerland); Paul, D. J. [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-03-07

    The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1??m thick Si{sub 1?x}Ge{sub x} buffers (with x?>?0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475?°C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si{sub 1?x}Ge{sub x} layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach.

  16. Gamma-ray lines from SN2014J

    E-Print Network [OSTI]

    Siegert, Thomas

    2015-01-01

    On 21 January 2014, SN2014J was discovered in M82 and found to be the closest type Ia supernova (SN Ia) in the last four decades. INTEGRAL observed SN2014J from the end of January until late June for a total exposure time of about 7 Ms. SNe Ia light curves are understood to be powered by the radioactive decay of iron peak elements of which $^{56}$Ni is dominantly synthesized during the thermonuclear disruption of a CO white dwarf (WD). The measurement of $\\gamma$-ray lines from the decay chain $^{56}$Ni$\\rightarrow$$^{56}$Co$\\rightarrow$$^{56}$Fe provides unique information about the explosion in supernovae. Canonical models assume $^{56}$Ni buried deeply in the supernova cloud, absorbing most of the early $\\gamma$-rays, and only the consecutive decay of $^{56}$Co should become directly observable through the overlaying material several weeks after the explosion when the supernova envelope dilutes as it expands. Surprisingly, with the spectrometer on INTEGRAL, SPI, we detected $^{56}$Ni $\\gamma$-ray lines at ...

  17. Diameter dependent thermoelectric properties of individual SnTe nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xu, E. Z.; Li, Z.; Martinez, J. A.; Sinitsyn, N.; Htoon, H.; Li, Nan; Swartzentruber, B.; Hollingsworth, J. A.; Wang, Jian; Zhang, S. X.

    2015-01-15

    The lead-free compound tin telluride (SnTe) has recently been suggested to be a potentially promising thermoelectric material because of its similar electronic band structure as the well-known lead telluride. Here we report on the first thermoelectric study of individual single crystalline SnTe nanowires (NWs) with different diameters ranging from ~200 to ~1000 nm. Measurements of thermopower S, electrical conductivity ?, and thermal conductivity ? were carried out on the same nanowires over a temperature range of 25 - 300 K. While ? does not show a strong diameter dependence, the thermopower increases by a factor of 2 when the nanowiremore »diameter is decreased from 1000 nm to 200 nm. The thermal conductivities of the measured NWs are only about half of that of the bulk SnTe, which may arise from the enhanced phonon-grain boundary and phonon-defect scatterings. Temperature dependent figure-of-merit ZT was determined and the maximum value at room temperature is ~3 times higher than what was obtained in bulk samples of comparable carrier density.« less

  18. Spectral Models for Early Time SN 2011fe Observations

    E-Print Network [OSTI]

    Baron, E; Sullivan, M; Hsiao, E; Ellis, R S; Gal-Yam, A; Howell, D A; Nugent, P E; Dominguez, I; Krisciunas, K; Phillips, M M; Suntzeff, N; Wang, L; Thomas, R C

    2015-01-01

    We use observed UV through near IR spectra to examine whether SN 2011fe can be understood in the framework of Branch-normal SNe Ia and to examine its individual peculiarities. As a benchmark, we use a delayed-detonation model with a progenitor metallicity of Z_solar/20. We study the sensitivity of features to variations in progenitor metallicity, the outer density profile, and the distribution of radioactive nickel. The effect of metallicity variations in the progenitor have a relatively small effect on the synthetic spectra. We also find that the abundance stratification of SN 2011fe resembles closely that of a delayed detonation model with a transition density that has been fit to other Branch-normal Type Ia supernovae. At early times, the model photosphere is formed in material with velocities that are too high, indicating that the photosphere recedes too slowly or that SN 2011fe has a lower specific energy in the outer ~0.1 M_sun than does the model. We discuss several explanations for the discrepancies. ...

  19. Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*

    E-Print Network [OSTI]

    Bowers, John

    Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga* , Mike Morsea , Mario J. Panicciaa , Moshe, Charlottesville, VA 22904, USA Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes. Research on the Ge/Si photodiodes, one of the fundamental components needed for building integrated silicon

  20. MOTION OF ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Westervelt, R.M.

    2011-01-01

    MOTION OF ELECTRON-HOLE DROPS IN Ge R. M. Westervelt, J. C.MOTION OF ELECTRON-HOLE DROPS IN Ge R. M. Westervelt, J. C.OF ELECTRON-HOLE DROPS IN Ge R M Westervelt, J C Culbertson

  1. Conduction band discontinuity and electron confinement at the Si[subscript x]Ge[subscript 1?x]/Ge interface

    E-Print Network [OSTI]

    Mazzeo, G.

    Germanium rich heterostructures can constitute a valid alternative to Silicon for the confinement of single electron spins. The conduction band discontinuity in SiGe/Ge heterostructures grown on pure germanium substrate ...

  2. Bifacial solar cell with SnS absorber by vapor transport deposition

    SciTech Connect (OSTI)

    Wangperawong, Artit; Hsu, Po-Chun; Yee, Yesheng; Herron, Steven M.; Clemens, Bruce M.; Cui, Yi; Bent, Stacey F.

    2014-10-27

    The SnS absorber layer in solar cell devices was produced by vapor transport deposition (VTD), which is a low-cost manufacturing method for solar modules. The performance of solar cells consisting of Si/Mo/SnS/ZnO/indium tin oxide (ITO) was limited by the SnS layer's surface texture and field-dependent carrier collection. For improved performance, a fluorine doped tin oxide (FTO) substrate was used in place of the Mo to smooth the topography of the VTD SnS and to make bifacial solar cells, which are potentially useful for multijunction applications. A bifacial SnS solar cell consisting of glass/FTO/SnS/CdS/ZnO/ITO demonstrated front- and back-side power conversion efficiencies of 1.2% and 0.2%, respectively.

  3. Synthesis, NMR spectra, and structure of rhodium hydride complexes with Rh-Sn bonds

    SciTech Connect (OSTI)

    Krut'ko, B.P.; Permin, A.B.; Petrosyan, V.S.; Reutov, O.A.

    1985-06-20

    The authors study the hydride complexes using Sn 119 and H 1 NMR spectroscopy. The spectra were taken in a pulse mode on a Varian FT-80A spectrometer equipped with a wideband system at 29.66 and 79.54 MHz. The Sn 119 and H 1 NMR spectral parameters for a solution of the complex (Bu/sub 4/N)/sub 3/ (HRh(SnCl/sub 3/)/sub 5/) in CD/sub 3/CN are shown, the spectra show that the (HRh(SnCl/sub 3/)/sub 5/)/sup 3 -/ anion has octahedral structure with four equatorial and one axial Rh-Sn bonds. New rhodium hydride complexes with general formula (R/sub 4/N)/sub 3/(HRh(SnCl/sub 3/)/sub 5/) were synthesized.

  4. Charge transfer and mobility enhancement at CdO/SnTe heterointerfaces

    SciTech Connect (OSTI)

    Nishitani, Junichi; Yu, Kin Man; Walukiewicz, Wladek

    2014-09-29

    We report a study of the effects of charge transfer on electrical properties of CdO/SnTe heterostructures. A series of structures with variable SnTe thicknesses were deposited by RF magnetron sputtering. Because of an extreme type III band offset with the valence band edge of SnTe located at 1.5?eV above the conduction band edge of CdO, a large charge transfer is expected at the interface of the CdO/SnTe heterostructure. The electrical properties of the heterostructures are analyzed using a multilayer charge transport model. The analysis indicates a large 4-fold enhancement of the CdO electron mobility at the interface with SnTe. The mobility enhancement is attributed to reduction of the charge center scattering through neutralization of the donor-like defects responsible for the Fermi level pinning at the CdO/SnTe interface.

  5. Properties of excited states in {sup 77}Ge.

    SciTech Connect (OSTI)

    Kay, B. P.; Chiara, C. J.; Schiffer, J. P.; Kondev, F. G.; Zhu, S.; Carpenter, M. P.; Janssens, R. V. F.; Lauritsen, T.; Lister, C. J.; McCutchan, E. A.; Seweryniak, D.; Stefanescu, I.; Univ. of Maryland; Horia-Hulubei National Inst. for Physics and Nuclear Engineering

    2009-07-01

    The nucleus {sup 77}Ge was studied through the {sup 76}Ge({sup 13}C,{sup 12}C){sup 77}Ge reaction at a sub-Coulomb energy. The angular distributions of rays depopulating excited states in {sup 77}Ge were measured in order to constrain spin and parity assignments. Some of these assignments are of use in connection with neutrinoless double beta decay, where the population of states near the Fermi surface of {sup 76}Ge was recently explored using transfer reactions.

  6. Particle Production at 3 GeV X. Ding, UCLA

    E-Print Network [OSTI]

    McDonald, Kirk

    = 50m 0.02976 (neg: 0.01206, pos: 0.01770) Carbon 3 GeV, Z = 0m 0.03341 (neg: 0.01370, pos: 0.01971) Mercury 3 GeV, Z = 50 m 0.02096 (neg: 0.01070, pos: 0.01026) Mercury 3 GeV, Z = 0 m 0.02496 (neg: 0.01273, pos: 0.01223) Mercury 8 GeV, Z = 50 m 0.0263 (neg: 0.0136, pos: 0.0127) Mercury 8 GeV, Z = 0m 0

  7. SN 2008D: A WOLF-RAYET EXPLOSION THROUGH A THICK WIND

    SciTech Connect (OSTI)

    Svirski, Gilad; Nakar, Ehud

    2014-06-10

    Supernova (SN) 2008D/XRT 080109 is considered to be the only direct detection of a shock breakout from a regular SN to date. While a breakout interpretation was favored by several papers, inconsistencies remain between the observations and current SN shock breakout theory. Most notably, the duration of the luminous X-ray pulse is considerably longer than expected for a spherical breakout through the surface of a type Ibc SN progenitor, and the X-ray radiation features, mainly its flat spectrum and its luminosity evolution, are enigmatic. We apply a recently developed theoretical model for the observed radiation from a Wolf-Rayet SN exploding through a thick wind and show that it naturally explains all of the observed features of SN 2008D X-ray emission, including the energetics, the spectrum, and the detailed luminosity evolution. We find that the inferred progenitor and SN parameters are typical for an exploding Wolf-Rayet. A comparison of the wind density found at the breakout radius and the density at much larger radii, as inferred by late radio observations, suggests an enhanced mass-loss rate taking effect about 10 days prior to the SN explosion. This finding joins accumulating evidence for a possible late phase in the stellar evolution of massive stars, involving vigorous mass loss a short time before the SN explosion.

  8. The Peculiar SN 2005hk: Do Some Type Ia Supernovae Explode as Deflagrations?

    E-Print Network [OSTI]

    Phillips, M M; Frieman, J A; Blinnikov, S I; De Poy, D L; Prieto, J L; Milne, P; Contreras, C; Folatelli, G; Morrell, N; Hamuy, M; Suntzeff, N B; Roth, M; González, S; Krzeminski, W; Filippenko, A V; Freedman, W L; Chornock, R; Jha, S; Madore, B F; Persson, S E; Burns, C R; Wyatt, P; Murphy, D; Foley, R J; Ganeshalingam, M; Serduke, F J D; Krisciunas, K; Bassett, B; Becker, A; Dilday, B; Eastman, J; Garnavich, P M; Holtzman, J; Kessler, R; Lampeitl, H; Marriner, J P; Frank, S; Marshall, J L; Miknaitis, G; Sako, M; Schneider, D P; Van der Heyden, K J; Yasuda, N; Yasuda, Naoki

    2006-01-01

    We present extensive u'g'r'i'BVRIYJHKs photometry and optical spectroscopy of SN 2005hk. These data reveal that SN 2005hk was nearly identical in its observed properties to SN 2002cx, which has been called ``the most peculiar known type Ia supernova.'' Both supernovae exhibited high ionization SN 1991T-like pre-maximum spectra, yet low peak luminosities like SN 1991bg. The spectra reveal that SN 2005hk, like SN 2002cx, exhibited expansion velocities that were roughly half those of typical type Ia supernovae. The R and I light curves of both supernovae were also peculiar in not displaying the secondary maximum observed for normal type Ia supernovae. Our YJH photometry of SN 2005hk reveals the same peculiarity in the near-infrared. By combining our optical and near-infrared photometry of SN 2005hk with published ultraviolet light curves obtained with the Swift satellite, we are able to construct a bolometric light curve from ~10 days before to ~60 days after B maximum. The shape and unusually low peak luminosit...

  9. The Peculiar SN 2005hk: Do Some Type Ia Supernovae Explode as Deflagrations?

    E-Print Network [OSTI]

    M. M. Phillips; W. Li; J. A. Frieman; S. I. Blinnikov; D. DePoy; J. L. Prieto; P. Milne; C. Contreras; G. Folatelli; N. Morrell; M. Hamuy; N. B. Suntzeff; M. Roth; S. Gonzalez; W. Krzeminski; A. V. Filippenko; W. L. Freedman; R. Chornock; S. Jha; B. F. Madore; S. E. Persson; C. R. Burns; P. Wyatt; D. Murphy; R. J. Foley; M. Ganeshalingam; F. J. D. Serduke; K. Krisciunas; B. Bassett; A. Becker; B. Dilday; J. Eastman; P. M. Garnavich; J. Holtzman; R. Kessler; H. Lampeitl; J. Marriner; S. Frank; J. L. Marshall; G. Miknaitis; M. Sako; D. P. Schneider; K. van der Heyden; Naoki Yasuda

    2007-03-26

    We present extensive u'g'r'i'BVRIYJHKs photometry and optical spectroscopy of SN 2005hk. These data reveal that SN 2005hk was nearly identical in its observed properties to SN 2002cx, which has been called ``the most peculiar known type Ia supernova.'' Both supernovae exhibited high ionization SN 1991T-like pre-maximum spectra, yet low peak luminosities like SN 1991bg. The spectra reveal that SN 2005hk, like SN 2002cx, exhibited expansion velocities that were roughly half those of typical type Ia supernovae. The R and I light curves of both supernovae were also peculiar in not displaying the secondary maximum observed for normal type Ia supernovae. Our YJH photometry of SN 2005hk reveals the same peculiarity in the near-infrared. By combining our optical and near-infrared photometry of SN 2005hk with published ultraviolet light curves obtained with the Swift satellite, we are able to construct a bolometric light curve from ~10 days before to ~60 days after B maximum. The shape and unusually low peak luminosity of this light curve, plus the low expansion velocities and absence of a secondary maximum at red and near-infrared wavelengths, are all in reasonable agreement with model calculations of a 3D deflagration which produces ~0.25 M_sun of 56Ni.

  10. Neutron capture on 130Sn during r-process freeze-out

    E-Print Network [OSTI]

    J. Beun; J. C. Blackmon; W. R. Hix; G. C. McLaughlin; M. S. Smith; R. Surman

    2008-06-24

    We examine the role of neutron capture on 130Sn during r-process freeze-out in the neutrino-driven wind environment of the core-collapse supernova. We find that the global r-process abundance pattern is sensitive to the magnitude of the neutron capture cross section of 130Sn. The changes to the abundance pattern include not only a relative decrease in the abundance of 130Sn and an increase in the abundance of 131Sn, but also a shift in the distribution of material in the rare earth and third peak regions.

  11. Structural, optical and ethanol sensing properties of Cu-doped SnO{sub 2} nanowires

    SciTech Connect (OSTI)

    Johari, Anima Sharma, Manish; Johari, Anoopshi; Bhatnagar, M. C.

    2014-04-24

    In present work, one-dimensional nanostructure of Cu-doped Tin oxide (SnO{sub 2}) was synthesized by using thermal evaporation method in a tubular furnace under Nitrogen (N{sub 2}) ambience. The growth was carried out at atmospheric pressure. SEM and TEM images reveal the growth of wire-like nanostructures of Cu-doped SnO{sub 2} on Si substrate. The XRD analysis confirms that the synthesized SnO{sub 2} nanowires have tetragonal rutile structure with polycrystalline nature and X-ray diffraction pattern also showed that Cu gets incorporated into the SnO{sub 2} lattice. EDX spectra confirm the doping of Cu into SnO{sub 2} nanowires and atomic fraction of Cu in nanowires is ? 0.5 at%. The Vapor Liquid Solid (VLS) growth mechanism for Cu-doped SnO{sub 2} nanowires was also confirmed by EDX spectra. The optical properties of as grown Cu-doped SnO{sub 2} nanowires were studied by using UV-vis spectra which concludes the band gap of about 3.7 eV. As synthesized single Cu-doped SnO{sub 2} nanowire based gas sensor exhibit relatively good performance to ethanol gas. This sensing behaviour offers a suitable application of the Cu-doped SnO{sub 2} nanowire sensor for detection of ethanol gas.

  12. Gyromagnetic ratios of excited states and nuclear structure near {sup 132}Sn

    SciTech Connect (OSTI)

    Stuchbery, Andrew E.

    2014-11-11

    Several g-factor measurements have been performed recently on nuclei near the neutron-rich, double-magic nucleus {sup 132}Sn. The focus here is on {sup 134}Te, the N = 82 isotone which has two protons added to {sup 132}Sn. The electromagnetic properties of {sup 134}Te are examined. Comparisons are made with other nuclei that have two protons outside a double-magic core. The extent to which {sup 132}Sn is an inert core is discussed based on these comparisons. The electromagnetic properties of the N = 82 isotones from {sup 132}Sn to {sup 146}Gd are also discussed.

  13. Role of nucleation sites on the formation of nanoporous Ge

    SciTech Connect (OSTI)

    Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States); Elliman, R. G. [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

    2012-09-24

    The role of nucleation sites on the formation of nanoporous Ge was investigated. Three Ge films with different spherical or columnar pore morphologies to act as inherent nucleation sites were sputtered on (001) Ge. Samples were implanted 90 Degree-Sign from incidence at 300 keV with fluences ranging from 3.0 Multiplication-Sign 10{sup 15} to 3.0 Multiplication-Sign 10{sup 16} Ge{sup +}/cm{sup 2}. Electron microscopy investigations revealed varying thresholds for nanoporous Ge formation and exhibited a stark difference in the evolution of the Ge layers based on the microstructure of the initial film. The results suggest that the presence of inherent nucleation sites significantly alters the onset and evolution of nanoporous Ge.

  14. Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b

    E-Print Network [OSTI]

    Kummel, Andrew C.

    Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b , Sarah R passivation of Ge(100) surface via formation of Ge-N and Ge-O surface species was studied using scanning cyclotron resonance (ECR) plasma source formed an ordered Ge-N structure on a Ge(100) surface at 500o C. DFT

  15. Prompt Gamma Rays in {sup 77}Ge after Neutron Capture on {sup 76}Ge

    SciTech Connect (OSTI)

    Meierhofer, Georg; Grabmayr, Peter; Jochum, Josef [Physikalisches Institut, Eberhard Karls Universitaet Tuebingen, Auf der Morgenstelle 14, 72076 Tuebingen (Germany); Canella, Lea [Institut fuer Radiochemie, Technische Universitaet Muenchen, Walther-Meissner-Str. 3, 85748 Garching (Germany); Jolie, Jan; Kudejova, Petra; Warr, Nigel [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Cologne (Germany)

    2009-01-28

    The observation of neutrinoless double beta decay would be proof of the Majorana nature of the neutrino. Half-lives for these decays are very long (for {sup 76}Ge:>10{sup 25} y), so background reduction and rejection is the major task for double beta experiments. The GERDA (GERmanium Detector Array) experiment at the Gran Sasso Laboratory of the INFN (LNGS) searches for neutrinoless double beta decay of {sup 76}Ge. The isotope {sup 76}Ge is an ideal candidate because it can be used as source and detector at the same time. A large remaining contribution to the background arises from the prompt gamma cascade after neutron capture by {sup 76}Ge followed by {beta}{sup -}-decay of {sup 77}Ge. Since the prompt gamma decay scheme is poorly known, measurements with isotopically enriched Germanium samples were carried out at the PGAA facility at the research reactor FRM II (Munich). With the known prompt gamma spectrum it will be possible to improve the overall veto efficiency of the GERDA experiment.

  16. Material properties in SiGe/Ge quantum wells Rebecca K. Schaevitz*, Jonathan E. Roth, Onur Fidaner, and David A. B. Miller

    E-Print Network [OSTI]

    Miller, David A. B.

    Material properties in SiGe/Ge quantum wells Rebecca K. Schaevitz*, Jonathan E. Roth, Onur Fidaner *Corresponding author: rschaevitz@stanford.edu Abstract: Photocurrent measurements in Ge quantum wells parameters for design of high-performance SiGe/Ge quantum well optoelectronics on silicon. Germanium

  17. Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo, and David A. B. Miller

    E-Print Network [OSTI]

    Miller, David A. B.

    Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo bandwidth have been demonstrated [4]. 2. Quantum well design Ge is an indirect band gap material, but it has. In order to have good quantum confinement, SiGe barriers are used since Si and Ge have a very high direct

  18. Design and Analysis of TQS01, a 90 mm Nb3Sn Model Quadrupole for LHC Luminosity Upgrade Based on a Key and Bladder Assembly

    E-Print Network [OSTI]

    Caspi, S.

    2008-01-01

    and Analysis of TQS01, a 90 mm Nb 3 Sn Model Quadrupole forStructure for an LHC 90 mm Nb 3 Sn quadrupole magnet”, IEEEal. , “Development of a 90-mm Nb3Sn Technological Quadrupole

  19. GRB 130427A AND SN 2013cq: A MULTI-WAVELENGTH ANALYSIS OF AN INDUCED GRAVITATIONAL COLLAPSE EVENT

    SciTech Connect (OSTI)

    Ruffini, R.; Wang, Y.; Enderli, M.; Muccino, M.; Kovacevic, M.; Bianco, C. L.; Pisani, G. B.; Rueda, J. A. [Dip. di Fisica and ICRA, Sapienza Università di Roma, Piazzale Aldo Moro 5, I-00185 Rome (Italy); Penacchioni, A. V., E-mail: yu.wang@icranet.org [ICRANet-Rio, Centro Brasileiro de Pesquisas Fisicas, Rua Dr. Xavier Sigaud 150, Rio de Janeiro, RJ 22290-180 (Brazil)

    2015-01-01

    We performed a data analysis of the observations by the Swift, NuStar, and Fermi satellites in order to probe the induced gravitational collapse (IGC) paradigm for gamma-ray bursts (GRBs) associated with supernovae (SNe) in the terra incognita of GRB 130427A. We compare our data analysis with those in the literature. We have verified that GRB 130427A conforms to the IGC paradigm by examining the power law behavior of the luminosity in the early 10{sup 4} s of the XRT observations. This has led to the identification of the four different episodes of the binary driven hypernovae (BdHNe) and to the prediction, on 2013 May 2, of the occurrence of SN 2013cq, which was also observed in the optical band on 2013 May 13. The exceptional quality of the data has allowed the identification of novel features in Episode 3 including: (1) the confirmation and the extension of the existence of the recently discovered nested structure in the late X-ray luminosity in GRB 130427A, as well as the identification of a spiky structure at 10{sup 2} s in the cosmological rest-frame of the source; (2) a power law emission of the GeV luminosity light curve and its onset at the end of Episode 2; and (3) different Lorentz ? factors for the emitting regions of the X-ray and GeV emissions in this Episode 3. These results make it possible to test the details of the physical and astrophysical regimes at work in the BdHNe: (1) a newly born neutron star and the supernova ejecta, originating in Episode 1; (2) a newly formed black hole originating in Episode 2; and (3) the possible interaction among these components, observable in the standard features of Episode 3.

  20. Probing the Failure Mechanism of SnO2 Nanowires for Sodium-ion Batteries

    SciTech Connect (OSTI)

    Gu, Meng; Kushima, Akihiro; Shao, Yuyan; Zhang, Jiguang; Liu, Jun; Browning, Nigel D.; Li, Ju; Wang, Chong M.

    2013-09-30

    Non-lithium metals such as sodium have attracted wide attention as a potential charge carrying ion for rechargeable batteries, performing the same role as lithium in lithium- ion batteries. As sodium and lithium have the same +1 charge, it is assumed that what has been learnt about the operation of lithium ion batteries can be transferred directly to sodium batteries. Using in-situ TEM, in combination with DFT calculations, we probed the structural and chemical evolution of SnO2 nanowire anodes in Na-ion batteries and compared them quantitatively with results from Li-ion batteries [Science 330 (2010) 1515]. Upon Na insertion into SnO2, a displacement reaction occurs, leading to the formation of amorphous NaxSn nanoparticles covered by crystalline Na2O shell. With further Na insertion, the NaxSn core crystallized into Na15Sn4 (x=3.75). Upon extraction of Na (desodiation), the NaxSn core transforms to Sn nanoparticles. Associated with a volume shrinkage, nanopores appear and metallic Sn particles are confined in hollow shells of Na2O, mimicking a peapod structure. These pores greatly increase electrical impedance, therefore naturally accounting for the poor cyclability of SnO2. DFT calculations indicate that Na+ diffuses 30 times slower than Li+ in SnO2, in agreement with in-situ TEM measurement. Insertion of Na can chemo-mechanically soften the reaction product to greater extent than in lithiation. Therefore, in contrast to the lithiation of SnO2, no dislocation plasticity was seen ahead of the sodiation front. This direct comparison of the results from Na and Li highlights the critical role of ionic size and electronic structure of different ionic species on the charge/discharge rate and failure mechanisms in these batteries.

  1. Probing the Failure Mechanism of SnO{sub 2} Nanowires for Sodium-Ion Batteries

    SciTech Connect (OSTI)

    Gu, Meng; Kushima, Akihiro; Shao, Yuyan; Zhang, Ji-Guang; Liu, Jun; Browning, Nigel D; Li, Ju; Wang, Chongmin

    2013-09-30

    Nonlithium metals such as sodium have attracted wide attention as a potential charge carrying ion for rechargeable batteries. Using in situ transmission electron microscopy in combination with density functional theory calculations, we probed the structural and chemical evolution of SnO{sub 2} nanowire anodes in Na-ion batteries and compared them quantitatively with results from Li-ion batteries (Huang, J. Y.; et al. Science 2010, 330, 1515-1520). Upon Na insertion into SnO{sub 2}, a displacement reaction occurs, leading to the formation of amorphous Na{sub x}Sn nanoparticles dispersed in Na{sub 2}O matrix. With further Na insertion, the Na{sub x}Sn crystallized into Na{sub 15}Sn{sub 4} (x = 3.75). Upon extraction of Na (desodiation), the Na{sub x}Sn transforms to Sn nanoparticles. Associated with the dealloying, pores are found to form, leading to a structure of Sn particles confined in a hollow matrix of Na{sub 2}O. These pores greatly increase electrical impedance, therefore accounting for the poor cyclability of SnO{sub 2}. DFT calculations indicate that Na{sup +} diffuses 30 times slower than Li{sup +} in SnO{sub 2}, in agreement with in situ TEM measurement. Insertion of Na can chemomechanically soften the reaction product to a greater extent than in lithiation. Therefore, in contrast to the lithiation of SnO{sub 2} significantly less dislocation plasticity was seen ahead of the sodiation front. This direct comparison of the results from Na and Li highlights the critical role of ionic size and electronic structure of different ionic species on the charge/discharge rate and failure mechanisms in these batteries.

  2. Preparation and characterization of Pd{sub 2}Sn nanoparticles

    SciTech Connect (OSTI)

    Page, Katharine [Materials Department and Materials Research Laboratory, University of California, Santa Barbara, CA 93106 (United States); Schade, Christina S. [Materials Department and Materials Research Laboratory, University of California, Santa Barbara, CA 93106 (United States); Institut fuer Anorganische Chemie und Analytische Chemie, Johannes Gutenberg-Universitaet Mainz, Duesbergweg 10-14, Mainz D55099 (Germany); Zhang, Jinping [Materials Department and Materials Research Laboratory, University of California, Santa Barbara, CA 93106 (United States); Chupas, Peter J.; Chapman, Karena W. [Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439 (United States); Proffen, Thomas [Los Alamos National Laboratory, Lujan Neutron Scattering Center LANSCE-12, MS H805, Los Alamos, NM 87545 (United States); Cheetham, Anthony K. [Materials Department and Materials Research Laboratory, University of California, Santa Barbara, CA 93106 (United States); Seshadri, Ram [Materials Department and Materials Research Laboratory, University of California, Santa Barbara, CA 93106 (United States)], E-mail: seshadri@mrl.ucsb.edu

    2007-12-04

    We report a non-aqueous solution preparation of Pd{sub 2}Sn nanoparticles with sizes near 20 nm. The intermetallic compound with the Co{sub 2}Si structure has been characterized using transmission electron microscopy, Rietveld refinement of synchrotron X-ray and neutron powder diffraction, and real-space pair distribution function analysis of high-energy synchrotron X-ray scattering. We also present a description of the electronic structure of this covalent intermetallic using density functional calculations of the electronic structure.

  3. SN-03 Power Rate Case (rates/ratecases)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust, High-Throughput Analysis of Protein1-0845*RV 14800Small Angle X-RayFinal Proposal:2003 SN

  4. Interface and nanostructure evolution of cobalt germanides on Ge(001)

    SciTech Connect (OSTI)

    Grzela, T., E-mail: grzela@ihp-microelectronics.com; Schubert, M. A. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Koczorowski, W. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Dipartimento di Scienze, Università degli Studi Roma Tre, I-00146 Roma (Italy); Czajka, R. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Radny, M. W. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); School of Mathematical and Physical Sciences, The University of Newcastle, University Drive, Callaghan NSW, 2308 (Australia); Curson, N.; Schofield, S. R. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); BTU Cottbus, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

    2014-02-21

    Cobalt germanide (Co{sub x}Ge{sub y}) is a candidate system for low resistance contact modules in future Ge devices in Si-based micro and nanoelectronics. In this paper, we present a detailed structural, morphological, and compositional study on Co{sub x}Ge{sub y} formation on Ge(001) at room temperature metal deposition and subsequent annealing. Scanning tunneling microscopy and low energy electron diffraction clearly demonstrate that room temperature deposition of approximately four monolayers of Co on Ge(001) results in the Volmer Weber growth mode, while subsequent thermal annealing leads to the formation of a Co-germanide continuous wetting layer which evolves gradually towards the growth of elongated Co{sub x}Ge{sub y} nanostructures. Two types of Co{sub x}Ge{sub y} nanostructures, namely, flattop- and ridge-type, were observed and a systematic study on their evolution as a function of temperature is presented. Additional transmission electron microscopy and x-ray photoemission spectroscopy measurements allowed us to monitor the reaction between Co and Ge in the formation process of the Co{sub x}Ge{sub y} continuous wetting layer as well as the Co{sub x}Ge{sub y} nanostructures.

  5. In situ measurement of electromigration-induced transient stress in Pb-free Sn-Cu solder joints by synchrotron radiation based X-ray polychromatic microdiffraction

    E-Print Network [OSTI]

    Chen, Kai

    2009-01-01

    elastic stress in Pb-free SnCu solder joints was studied byeffective charge number for SnCu solder is calculated and

  6. In situ measurement of electromigration-induced transient stress in Pb-free Sn-Cu solder joints by synchrotron radiation based X-ray polychromatic microdiffraction

    E-Print Network [OSTI]

    Chen, Kai

    2011-01-01

    elastic stress in Pb-free SnCu solder joints was studied byeffective charge number for SnCu solder is calculated and

  7. Growth of CrO[subscript 2] coated single crystalline (SnO[subscript 2]) tin oxide nanowires

    E-Print Network [OSTI]

    Miao, Guo-Xing

    Single crystalline tin oxide (SnO[subscript 2]) nanowires have been synthesized by carbothermal reduction of SnO[subscript 2] nanopowder followed by thermal evaporation of the reduced precursor and growth via the ...

  8. A PANCHROMATIC VIEW OF THE RESTLESS SN 2009ip REVEALS THE EXPLOSIVE EJECTION OF A MASSIVE STAR ENVELOPE

    E-Print Network [OSTI]

    Friedman, Andrew Samuel

    The double explosion of SN 2009ip in 2012 raises questions about our understanding of the late stages of massive star evolution. Here we present a comprehensive study of SN 2009ip during its remarkable rebrightenings. ...

  9. Electrochemical Insertion/extraction of Lithium in Multiwall Carbon Nanotube/Sb and SnSb?.? Nanocomposites

    E-Print Network [OSTI]

    Chen, Wei Xiang

    Multiwall carbon nanotubes (CNTs) were synthesized by catalytic chemical vapor deposition of acetylene and used as templates to prepare CNT-Sb and CNT-SnSb?.? nanocomposites via the chemical reduction of SnCl? and SbCl? ...

  10. Colon Cancer Mapping | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 OutreachProductswsicloudwsiclouddenDVA N C E D BGene NetworkNuclearDNP 20082 P2014 CollegiateVanderbilt, GE Team

  11. Crowdsourcing Software Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submit theCovalent Bonding in Actinide SandwichCrayCrosscuttingGE, MIT Build

  12. Crowdsourcing Software Award | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submit theCovalent Bonding in Actinide SandwichCrayCrosscuttingGE, MIT

  13. Patent Record Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeeding access| Department ofStephenSkinner,Past and Present EERE Budget PastGE's

  14. Game Changing Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear PhysicsGE GlobalGetting&Tools »GambitI

  15. Improving thermostability of CrO{sub 2} thin films by doping with Sn

    SciTech Connect (OSTI)

    Ding, Yi; Wang, Ziyu; Liu, Shuo; Shi, Jing; Yin, Di; Yuan, Cheng; Lu, Zhihong; Xiong, Rui

    2014-09-01

    Chromium dioxide (CrO{sub 2}) is an ideal material for spin electronic devices since it has almost 100% spin polarization near Fermi level. However, it is thermally unstable and easily decomposes to Cr{sub 2}O{sub 3} even at room temperature. In this study, we try to improve the thermal stability of CrO{sub 2} thin films by doping with Sn whose oxide has the same structure as CrO{sub 2}. High quality epitaxial CrO{sub 2} and Sn-doped CrO{sub 2} films were grown on single crystalline TiO{sub 2} (100) substrates by chemical vapor deposition. Sn{sup 4+} ions were believed to be doped into CrO{sub 2} lattice and take the lattice positions of Cr{sup 4+}. The magnetic measurements show that Sn-doping leads to a decrease of magnetocrystalline anisotropy. The thermal stabilities of the films were evaluated by annealing the films at different temperatures. Sn-doped films can withstand a temperature up to 510?°C, significantly higher than what undoped films can do (lower than 435?°C), which suggests that Sn-doping indeed enhances the thermal stability of CrO{sub 2} films. Our study also indicates that Sn-doping may not change the essential half metallic properties of CrO{sub 2}. Therefore, Sn-doped CrO{sub 2} is expected to be very promising for applications in spintronic devices.

  16. Irradiation requirements of Nb3Sn based SC magnets electrical insulation

    E-Print Network [OSTI]

    McDonald, Kirk

    Irradiation requirements of Nb3Sn based SC magnets electrical insulation developed within the Eu and Power Engineering #12;Outline · Motivation of launching EuCARD irradiation task · Nb3Sn SC magnet coils electrical insulation candidates · EuCARD insulators certification conditions · Post irradiation tests

  17. Hydroxyl-Quenching Effects on the Photoluminescence Properties of SnO2:Eu3+ Nanoparticles

    E-Print Network [OSTI]

    Park, Byungwoo

    Hydroxyl-Quenching Effects on the Photoluminescence Properties of SnO2:Eu3+ Nanoparticles Taeho: January 20, 2007 The effects of hydroxyl quenching were examined on the photoluminescence properties of Sn, and this behavior with XPS confirmed the hydroxyl-quenching effect. Introduction For display devices, such as plasma

  18. On type IIn/Ia-CSM supernovae as exemplified by SN 2012ca

    E-Print Network [OSTI]

    Inserra, C; Smartt, S J; Benetti, S; Chen, T -W; Childress, M; Gal-Yam, A; Howell, D A; Kangas, T; Pignata, G; Polshaw, J; Sullivan, M; Smith, K W; Valenti, S; Young, D R; Parker, S; Seccull, T; McCrum, M

    2015-01-01

    We present the complete set of ultra-violet, optical and near-infrared photometry and spectroscopy for SN 2012ca, covering the period from 6 days prior to maximum light, until 531 days after maximum. The spectroscopic time series for SN 2012ca is essentially unchanged over 1.5 years, and appear to be dominated at all epochs by signatures of interaction with a dense circumstellar medium rather than the underlying supernova (SN). SN 2012ca is a member of the class of type Ia-CSM/IIn SNe, the nature of which have been debated extensively in the literature. The two leading scenarios are either a type Ia SN exploding within a dense CSM from a non-degenerate, evolved companion, or a core-collapse SN from a massive star. While some members of the class have been unequivocally associated with type Ia SNe, in other cases the association is less certain. While it is possible that Sn 2012ca does arise from a thermonuclear SN, this would require a relatively high (between 20 and 70 per cent) efficiency in converting kine...

  19. Uncovering the putative B-star binary companion of the SN 1993J progenitor

    SciTech Connect (OSTI)

    Fox, Ori D.; Filippenko, Alexei V.; Bradley Cenko, S.; Li, Weidong; Parker, Alex H. [Department of Astronomy, University of California, Berkeley, CA 94720-3411, USA. (United States); Azalee Bostroem, K. [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD 21218 (United States); Van Dyk, Schuyler D. [Caltech, Mailcode 314-6, Pasadena, CA 91125 (United States); Fransson, Claes [Department of Astronomy, Oskar Klein Centre, Stockholm University, AlbaNova, SE-106 91 Stockholm (Sweden); Matheson, Thomas [National Optical Astronomy Observatory, 950 North Cherry Avenue, Tucson, AZ 85719-4933 (United States); Chandra, Poonam [National Centre for Radio Astrophysics, Tata Institute of Fundamental Research, Pune University Campus, Ganeshkhind, Pune-411007 (India); Dwarkadas, Vikram [Department of Astronomy and Astrophysics, University of Chicago, 5640 S Ellis Ave, Chicago, IL 60637 (United States); Smith, Nathan, E-mail: ofox@berkeley.edu [Steward Observatory, 933 North Cherry Avenue, Tucson, AZ 85721 (United States)

    2014-07-20

    The Type IIb supernova (SN) 1993J is one of only a few stripped-envelope SNe with a progenitor star identified in pre-explosion images. SN IIb models typically invoke H envelope stripping by mass transfer in a binary system. For the case of SN 1993J, the models suggest that the companion grew to 22 M{sub ?} and became a source of ultraviolet (UV) excess. Located in M81, at a distance of only 3.6 Mpc, SN 1993J offers one of the best opportunities to detect the putative companion and test the progenitor model. Previously published near-UV spectra in 2004 showed evidence for absorption lines consistent with a hot (B2 Ia) star, but the field was crowded and dominated by flux from the SN. Here we present Hubble Space Telescope Cosmic Origins Spectrograph and Wide-Field Camera 3 observations of SN 1993J from 2012, at which point the flux from the SN had faded sufficiently to potentially measure the UV continuum properties from the putative companion. The resulting UV spectrum is consistent with contributions from both a hot B star and the SN, although we cannot rule out line-of-sight coincidences.

  20. Electromechanical properties of freestanding graphene functionalized with tin oxide (SnO2) nanoparticles

    E-Print Network [OSTI]

    Thibado, Paul M.

    -type inorganic nanocrystals formed from materials such as ZnO, TiO2, SnO2, etc.2,3 In particular, SnO2,8 Single-walled carbon nanotubes promise even more efficient conversion due to their potentially large sur carbon nanotubes by a chemical solution route.10 Nanotubes have proved difficult to work with, however

  1. Study of the low-lying states of Ge2 and Ge2 using negative ion zero electron kinetic energy spectroscopy

    E-Print Network [OSTI]

    Neumark, Daniel M.

    Study of the low-lying states of Ge2 and Ge2 using negative ion zero electron kinetic energy The low-lying states of Ge2 and Ge2 are probed using negative ion zero electron kinetic energy ZEKE spectroscopy. The ZEKE spectrum of Ge2 yields an electron affinity of 2.035 0.001 eV for Ge2, as well as term

  2. Bio390 Study Questions for S-N Ch. 2 --Blood 1. Know S-N's list of 10 general functions/properties of blood.

    E-Print Network [OSTI]

    Prestwich, Ken

    effects of temperature, pH, CO2, PO4 2-, and ionic strength on the ability of hemoglobin to bind oxygenBio390 Study Questions for S-N Ch. 2 -- Blood Spring '01 1. Know S-N's list of 10 general functions/properties tends to decrease as body size increases. How does a relatively high P50 serve as an adaptation in small

  3. Cs6Ge8Zn: A Zintl Phase with Isolated Heteroatomic Clusters of Ge8Zn

    E-Print Network [OSTI]

    a single phase of Cs6Ge8Zn.8 The plate-like crystals of the compound are brittle, black, and with coal-like luster. Single-crystal studies unveiled a new type of cluster formation, a dimer of corner different types. The clusters of type A have only a horizontal mirror plane (Cm) while the clusters of type

  4. Origin of carrier generation in photovoltaic perovskite variant Cs2SnI6

    E-Print Network [OSTI]

    Xiao, Zewen; Kamiya, Toshio

    2015-01-01

    Cs2SnI6 is an air-stable & non-toxic variant of perovskite-type photovoltaic materials. In this letter, stability of intrinsic defects in Cs2SnI6 was examined by density functional theory calculations. We found that iodine vacancy and tin interstitial are the dominant defects, mainly responsible for the intrinsic n-type conductivity in Cs2SnI6. However, the transition levels of the dominant defects are deep, which makes it difficult to achieve high-density n-type doping. Tin vacancy is expected for p-type doping, but it has a very high formation energy > 3.6 eV because of the strong Sn-I covalent bonds and can hardly be generated. Instead, cesium vacancy is formed at an extremely Cs-poor condition and explains already-reported p-type conductivity by SnI2 doping.

  5. Structure and vibrations of different charge Ge impurity in ?-quartz

    SciTech Connect (OSTI)

    Kislov, A. N., E-mail: a.n.kislov@urfu.ru; Mikhailovich, A. P., E-mail: a.n.kislov@urfu.ru; Zatsepin, A. F., E-mail: a.n.kislov@urfu.ru [Ural Federal University, 19 Mira St., Yekaterinburg, 620002 (Russian Federation)

    2014-10-21

    Atomic structure and localized vibrations of ??SiO{sub 2}:Ge are studied using computer modeling techniques. The simulation was carried out by the lattice dynamics calculation of the local density of vibrational states. Local structures parameters are calculated, localized symmetrized vibrations frequency caused by Ge impurity in different charge states are defined. The movements of atoms located near Ge impurity are analyzed and their contribution into localized vibrations of different type is evaluated.

  6. Test Results of HD2, A High Field Nb3Sn Dipole with A 36 MM Bore

    E-Print Network [OSTI]

    Ferracin, Paolo

    2010-01-01

    a 15 T Nb 3 Sn dipole with a 35 mm bore”, IEEE Trans. Appl.Nb 3 Sn dipole magnet with a 35 mm bore”, IEEE Trans. Appl.NB 3 SN DIPOLE WITH A 36 MM BORE * P. Ferracin # , LBNL,

  7. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    SciTech Connect (OSTI)

    Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

    1995-07-01

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

  8. The Proposed Majorana 76Ge Double-Beta Decay Experiment

    SciTech Connect (OSTI)

    Aalseth, Craig E.; Anderson, Dale N.; Arthur, Richard J.; Avignone, Frank T.; Baktash, Cryus; Ball, Thedore; Barabash, Alexander S.; Bertrand, F.; Brodzinski, Ronald L.; Brudanin, V.; Bugg, William; Champagne, A. E.; Chan, Yuen-Dat; Cianciolo, Thomas V.; Collar, J. I.; Creswick, R. W.; Descovich, M.; Di Marco, Marie; Doe, P. J.; Dunham, Glen C.; Efremenko, Yuri; Egerov, V.; Ejiri, H.; Elliott, Steven R.; Emanuel, A.; Fallon, Paul; Farach, H. A.; Gaitskell, R. J.; Gehman, Victor; Grzywacz, Robert; Hallin, A.; Hazma, R.; Henning, R.; Hime, Andrew; Hossbach, Todd W.; Jordan, David V.; Kazkaz, K.; Kephart, Jeremy; King, G. S.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; Lesko, Kevin; Luke, P.; Luzum, M.; Macchiavelli, A. O.; McDonald, A.; Mei, Dongming; Miley, Harry S.; Mills, G. B.; Mokhtarani, A.; Nomachi, Masaharu; Orrell, John L.; Palms, John M.; Poon, Alan; Radford, D. C.; Reeves, James H.; Robertson, R. G. H.; Runkle, Robert C.; Rykaczewski, Krzysztof P.; Saburov, Konstantin; Sandukovsky, Viatcheslav; Sonnenschein, Andrew; Tornow, W.; Tull, C.; van de Water, R. G.; Vanushin, Igor; Vetter, Kai; Warner, Ray A.; Wilkerson, John F.; Wouters, Jan M.; Young , A. R.; Yumatov, V.

    2005-01-01

    The proposed Majorana experiment is based on an array of segmented intrinsic Ge detectors with a total mass of 500 kg of Ge isotopically enriched to 86% in 76Ge. Background reduction will be accomplished by: material selection, detector segmentation, pulse shape analysis, electro-formation of copper parts, and granularity of detector spacing. The predicted experimental sensitivity for measurement of the neutrinoless double-beta decay mode of 76Ge, over a data acquisition period of 5000 kg•y, is ~ 4?1027 y.

  9. GE funds initiative to support STEM initiatives in Oklahoma ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    investment in Oklahoma reflects GE's commitment to skills development for the future. "Growth and development go hand-in-hand with educational excellence, strength in science,...

  10. CMC technology revolutionary for aviation, power | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in new window) Novel CMC technology revolutionizes aircraft engines, turbines CMCs - Ceramic Matrix Composites - are a revolutionary material invented by GE scientists that offer...

  11. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect (OSTI)

    Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Höche, Thomas; Tünnermann, Andreas; Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  12. Construction progresses at GE's Oil & Gas Technology Center ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Construction progressing at GE's newest research center, the Oil & Gas Technology Center in Oklahoma City Click to email this to a friend (Opens in new window)...

  13. RADIATION DAMAGE RESISTANCE OF REVERSE ELECTRODE GE COAXIAL DETECTORS

    E-Print Network [OSTI]

    Pehl, Richard H.

    2011-01-01

    Parker, "Radiation Damage of Germanium Detectors", Bull. Am.to radiation damage between the two detectors was clearlyRADIATION DAMAGE RESISTANCE OF REVERSE ELECTRODE GE COAXIAL DETECTORS

  14. GE China Technology Center Wins Top 12 Most Innovative Practices...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to our local markets and innovating technologies to meet the most urgent needs of Chinese society. Additionally, GE teams up with local customers to jointly develop innovative...

  15. The Wizard of Schenectady: Charles Proteus Steinmetz | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    week the Smithsonian's "Past Imperfect" blog highlighted a man near and dear to the heart of GE Global Research, Charles Proteus Steinmetz. The article paints a really...

  16. Big Data and Analytics at Work | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    time analytics is required At GE we keep pace with these trends via the Industrial Internet, a highly connected ecosystem of intelligent machines, advanced analytics and people...

  17. A Sneak Peek Into Santa's Smarter Sleigh | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    legs a break. - An upgraded sleigh frame made from GE's high temperature Ceramic Matrix Composites (CMCs). The CMCs can withstand the heat of entry and reentry in earth's...

  18. Titan propels GE wind turbine research into new territory | ornl...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Titan propels GE wind turbine research into new territory January 17, 2014 The amount of global electricity supplied by wind, the world's fastest growing energy source, is expected...

  19. Thoughts From the 2012 Whitney Software Symposium | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Big Data, Modeling and Simulation, High Performance Computing and the Industrial Internet as key technological enablers of GE's Software initiatives. We enjoyed speakers from...

  20. EEDP and Other Leadership Programs | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ready to dive in? Apply for the program. GE Software Leadership Program The rise of the Industrial Internet requires a new breed of talent and organizational capability. New...

  1. Inclusive pi(0), eta, and direct photon production at high transverse momentum in p plus p and d plus Au collisions at root s(NN)=200 Ge

    E-Print Network [OSTI]

    Abelev, B. I.; Aggarwal, M. M.; Ahammed, Z.; Alakhverdyants, A. V.; Anderson, B. D.; Arkhipkin, D.; Averichev, G. S.; Balewski, J.; Barannikova, O.; Barnby, L. S.; Baumgart, S.; Beavis, D. R.; Bellwied, R.; Benedosso, F.; Betancourt, M. J.; Betts, R. R.; Bhasin, A.; Bhati, A. K.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Biritz, B.; Bland, L. C.; Bonner, B. E.; Bouchet, J.; Braidot, E.; Brandin, A. V.; Bridgeman, A.; Bruna, E.; Bueltmann, S.; Bunzarov, I.; Burton, T. P.; Cai, X. Z.; Caines, H.; Sanchez, M. Calderon de la Barca; Catu, O.; Cebra, D.; Cendejas, R.; Cervantes, M. C.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H. F.; Chen, J. H.; Chen, J. Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Choi, K. E.; Christie, W.; Chung, P.; Clarke, R. F.; Codrington, M. J. M.; Corliss, R.; Cramer, J. G.; Crawford, H. J.; Das, D.; Dash, S.; Leyva, A. Davila; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; DePhillips, M.; Derevschikov, A. A.; de Souza, R. Derradi; Didenko, L.; Djawotho, P.; Dogra, S. M.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Dunlop, J. C.; Mazumdar, M. R. Dutta; Efimov, L. G.; Elhalhuli, E.; Elnimr, M.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Eun, L.; Fachini, P.; Fatemi, R.; Fedorisin, J.; Fersch, R. G.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Gagliardi, Carl A.; Gangadharan, D. R.; Ganti, M. S.; Garcia-Solis, E. J.; Geromitsos, A.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gorbunov, Y. N.; Gordon, A.; Grebenyuk, O.; Grosnick, D.; Grube, B.; Guertin, S. M.; Gupta, A.; Gupta, N.; Guryn, W.; Haag, B.; Hallman, T. J.; Hamed, A.; Han, L. -X; Harris, J. W.; Hays-Wehle, J. P.; Heinz, M.; Heppelmann, S.; Hirsch, A.; Hjort, E.; Hoffman, A. M.; Hoffmann, G. W.; Hofman, D. J.; Hollis, R. S.; Huang, H. Z.; Humanic, T. J.; Huo, L.; Igo, G.; Iordanova, A.; Jacobs, P.; Jacobs, W. W.; Jakl, P.; Jena, C.; Jin, F.; Jones, C. L.; Jones, P. G.; Joseph, J.; Judd, E. G.; Kabana, S.; Kajimoto, K.; Kang, K.; Kapitan, J.; Kauder, K.; Keane, D.; Kechechyan, A.; Kettler, D.; Kikola, D. P.; Kiryluk, J.; Kisiel, A.; Klein, S. R.; Knospe, A. G.; Kocoloski, A.; Koetke, D. D.; Kollegger, T.; Konzer, J.; Kopytine, M.; Koralt, I.; Korsch, W.; Kotchenda, L.; Kouchpil, V.; Kravtsov, P.; Krueger, K.; Krus, M.; Kumar, L.; Kurnadi, P.; Lamont, M. A. C.; Landgraf, J. M.; LaPointe, S.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, C. -H; Lee, J. H.; Leight, W.; LeVine, M. J.; Li, C.; Li, L.; Li, N.; Li, W.; Li, X.; Li, X.; Li, Y.; Li, Z.; Lin, G.; Lindenbaum, S. J.; Lisa, M. A.; Liu, F.; Liu, H.; Liu, J.; Ljubicic, T.; Llope, W. J.; Longacre, R. S.; Love, W. A.; Lu, Y.; Ma, G. L.; Ma, Y. G.; Mahapatra, D. P.; Majka, R.; Mall, O. I.; Mangotra, L. K.; Manweiler, R.; Margetis, S.; Markert, C.; Masui, H.; Matis, H. S.; Matulenko, Yu A.; McDonald, D.; McShane, T. S.; Meschanin, A.; Milner, R.; Minaev, N. G.; Mioduszewski, Saskia; Mischke, A.; Mitrovski, M. K.; Mohanty, B.; Mondal, M. M.; Morozov, D. A.; Munhoz, M. G.; Nandi, B. K.; Nattrass, C.; Nayak, T. K.; Nelson, J. M.; Netrakanti, P. K.; Ng, M. J.; Nogach, L. V.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Okada, H.; Okorokov, V.; Olson, D.; Pachr, M.; Page, B. S.; Pal, S. K.; Pandit, Y.; Panebratsev, Y.; Pawlak, T.; Peitzmann, T.; Perevoztchikov, V.; Perkins, C.; Peryt, W.; Phatak, S. C.; Pile, P.; Planinic, M.; Ploskon, M. A.; Pluta, J.; Plyku, D.; Poljak, N.; Poskanzer, A. M.; Potukuchi, B. V. K. S.; Powell, C. B.; Prindle, D.; Pruneau, C.; Pruthi, N. K.; Pujahari, P. R.; Putschke, J.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Redwine, R.; Reed, R.; Rehberg, J. M.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Rose, A.; Roy, C.; Ruan, L.; Russcher, M. J.; Sahoo, R.; Sakai, S.; Sakrejda, I.; Sakuma, T.; Salur, S.; Sandweiss, J.; Sangaline, E.; Schambach, J.; Scharenberg, R. P.; Schmitz, N.; Schuster, T. R.; Seele, J.; Seger, J.; Selyuzhenkov, I.; Seyboth, P.; Shahaliev, E.; Shao, M.; Sharma, M.; Shi, S. S.; Sichtermann, E. P.; Simon, F.; Singaraju, R. N.; Skoby, M. J.; Smirnov, N.; Sorensen, P.; Sowinski, J.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Staszak, D.; Stevens, J. R.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Suarez, M. C.; Subba, N. L.; Sumbera, M.; Sun, X. M.; Sun, Y.; Sun, Z.; Surrow, B.; Symons, T. J. M.; de Toledo, A. Szanto; Takahashi, J.; Tang, A. H.; Tang, Z.; Tarini, L. H.; Tarnowsky, T.; Thein, D.; Thomas, J. H.; Tian, J.; Timmins, A. R.; Timoshenko, S.; Tlusty, D.; Tokarev, M.; Trainor, T. A.; Tram, V. N.; Trentalange, S.; Tribble, Robert E.; Tsai, O. D.; Ulery, J.; Ullrich, T.; Underwood, D. G.; Van Buren, G.; van Nieuwenhuizen, G.; Vanfossen, J. A., Jr.; Varma, R.; Vasconcelos, G. M. S.; Vasiliev, A. N.; Videbaek, F.; Viyogi, Y. P.; Vokal, S.; Voloshin, S. A.

    2010-01-01

    REVIEW C 81, 064904 (2010) Inclusive pi0, ?, and direct photon production at high transverse momentum in p + p and d + Au collisions at ?sN N = 200 GeV B. I. Abelev,8 M. M. Aggarwal,30 Z. Ahammed,47 A. V. Alakhverdyants,17 B. D. Anderson,18 D.... Arkhipkin,3 G. S. Averichev,17 J. Balewski,22 O. Barannikova,8 L. S. Barnby,2 S. Baumgart,52 D. R. Beavis,3 R. Bellwied,50 F. Benedosso,27 M. J. Betancourt,22 R. R. Betts,8 A. Bhasin,16 A. K. Bhati,30 H. Bichsel,49 J. Bielcik,10 J. Bielcikova,11 B. Biritz...

  2. Relationship between morphologies and orientations of Cu{sub 6}Sn{sub 5} grains in Sn3.0Ag0.5Cu solder joints on different Cu pads

    SciTech Connect (OSTI)

    Tian, Yanhong, E-mail: tianyh@hit.edu.cn; Zhang, Rui; Hang, Chunjin; Niu, Lina; Wang, Chunqing

    2014-02-15

    The morphologies and orientations of Cu{sub 6}Sn{sub 5} intermetallic compounds in the Sn3.0Ag0.5Cu solder joints both on polycrystalline and single crystal Cu pads under different peak reflow temperatures and times above liquids were investigated. The relationship between Cu{sub 6}Sn{sub 5} grain orientations and morphologies was clarified. At the interface of Sn3.0Ag0.5Cu/polycrystalline Cu pad, scalloped Cu{sub 6}Sn{sub 5} intermetallic compounds formed at 250 °C and roof shape Cu{sub 6}Sn{sub 5} formed at 300 °C. Both scalloped Cu{sub 6}Sn{sub 5} and roof shape Cu{sub 6}Sn{sub 5} had a preferred orientation of (0001) plane being parallel to polycrystalline Cu pad surface. Besides, the percentage of large angle grain boundaries increased as the peak reflow temperature rose. At the interface of Sn3.0Ag0.5Cu/(111) single crystal Cu pad, the Cu{sub 6}Sn{sub 5} intermetallic compounds were mainly scallop-type at 250 °C and were prism type at 300 °C. The prismatic Cu{sub 6}Sn{sub 5} grains grew along the three preferred directions with the inter-angles of 60° on (111) single crystal Cu pad while along two perpendicular directions on (100) single crystal Cu pad. The orientation relationship between Cu{sub 6}Sn{sub 5} grains and the single crystal Cu pads was investigated by electron backscatter diffraction technology. In addition, two types of hollowed Cu{sub 6}Sn{sub 5} intermetallic compounds were found inside the joints of polycrystalline Cu pads. The long hexagonal Cu{sub 6}Sn{sub 5} strips were observed in the joints reflowing at 250 °C while the hollowed Cu{sub 6}Sn{sub 5} strips with the ‘?’ shape cross-sections appeared at 300 °C, which was attributed to the different grain growth rates of different Cu{sub 6}Sn{sub 5} crystal faces. - Highlights: • The orientation of interfacial Cu{sub 6}Sn{sub 5} grains was obtained by EBSD technology. • Two types of hollowed Cu{sub 6}Sn{sub 5} strips were found at different temperatures. • The formation mechanism of hollowed Cu{sub 6}Sn{sub 5} was elaborated based on Bravais law. • The relationship between Cu{sub 6}Sn{sub 5} grain orientations and morphologies was clarified.

  3. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  4. Synthesis and Structure Determination of Ferromagnetic Semiconductors LaAMnSnO6 (A = Sr Ba)

    SciTech Connect (OSTI)

    T Yang; T Perkisas; J Hadermann; M Croft; A Ignatov; M Greenblatt

    2011-12-31

    LaAMnSnO{sub 6} (A = Sr, Ba) have been synthesized by high temperature solid-state reactions under dynamic 1% H{sub 2}/Ar flow. Rietveld refinements on room temperature powder X-ray diffraction data indicate that LaSrMnSnO{sub 6} crystallizes in the GdFeO{sub 3}-structure, with space group Pnma and, combined with transmission electron microscopy, LaBaMnSnO{sub 6} in Imma. Both space groups are common in disordered double-perovskites. The Mn{sup 3+} and Sn{sup 4+} ions whose valence states were confirmed by X-ray absorption spectroscopy, are completely disordered over the B-sites and the BO{sub 6} octahedra are slightly distorted. LaAMnSnO{sub 6} are ferromagnetic semiconductors with a T{sub C} = 83 K for the Sr- and 66 K for the Ba-compound. The title compounds, together with the previously reported LaCaMnSnO{sub 6} provide an interesting example of progression from Pnma to Imma as the tolerance factor increases. An analysis of the relationship between space group and tolerance factor for the series LaAMnMO{sub 6} (A = Ca, Sr, Ba; M = Sn, Ru) provides a better understanding of the symmetry determination for double perovskites.

  5. Isoscalar Breathing Mode State in Zr-90 and Sn-116 

    E-Print Network [OSTI]

    Rozsa, C. M.; Youngblood, David H.; Bronson, J. D.; Lui, YW; Garg, U.

    1980-01-01

    the AEr gate alone was able to remove essentially all unwanted events, the E' and TOF gates were maintained for additional discrim- ination. Two sets of these gates could be set to collect data in different exit channels. Three 2048 channel position... parameters. Nucleus (MeV) (MeV) W (Me V) t'p (fm) Qp (fm) &c Data angle range ~zr ?6Sn 96 129 45.7 60.8 27.7 40.9 1.50 1.40 0.70 0.73 1.30 1.35 (9'-57') (12'-50') TABLE III. Param. eters of the GMR and GQR. The er- rors...

  6. Shell model description of Ge isotopes

    E-Print Network [OSTI]

    J. G. Hirsch; P. C. Srivastava

    2012-04-12

    A shell model study of the low energy region of the spectra in Ge isotopes for $38\\leq N\\leq 50$ is presented, analyzing the excitation energies, quadrupole moments, $B(E2)$ values and occupation numbers. The theoretical results have been compared with the available experimental data. The shell model calculations have been performed employing three different effective interactions and valence spaces.We have used two effective shell model interactions, JUN45 and jj44b, for the valence space $f_{5/2} \\, p \\,g_{9/2}$ without truncation. To include the proton subshell $f_{7/2}$ in valence space we have employed the $fpg$ effective interaction due to Sorlin {\\it et al.}, with $^{48}$Ca as a core and a truncation in the number of excited particles.

  7. 3 GeV Injector Design Handbook

    SciTech Connect (OSTI)

    Wiedemann, H.; /SLAC, SSRL

    2009-12-16

    This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

  8. Nucleon Resonances Near 2 GeV

    E-Print Network [OSTI]

    He, Jun

    2015-01-01

    The nucleon resonances near 2 GeV are investigated through the $\\Sigma$(1385) and $\\Lambda(1520)$ photoproductions within a Regge-plus-resonance approach based on the new experimental data released by the CLAS Collaboration. The $\\Delta(2000)$ and the $N(2120)$ are found essential to reproduce the experimental data and should be assigned as second $[\\Delta 5/2^+]$ and third $[N3/2^-]$ in the constituent quark model, respectively. A calculation of the binding energy and decay pattern supports that the $N(1875)$, which is listed in the PDG as the third $N3/2^-$ nucleon resonance instead of the $N(2120)$, is from the $\\Sigma(1385)K$ interaction rather than a three quark state.

  9. Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2 Si0.75Ge0.25 using various H2 pressures

    E-Print Network [OSTI]

    Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2 ÕSi0.75Ge0.25 using various H2 pressures Gianni Taraschi,a) Sajan Saini, Wendy W. Fan, Lionel C Ge in SiO2 was synthesized by the reduction of Si0.75Ge0.25O2 with H2 , at various annealing

  10. Electron cooling in a young radio supernova: SN 2012aw

    SciTech Connect (OSTI)

    Yadav, Naveen; Ray, Alak [Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Chakraborti, Sayan [Institute for Theory and Computation, Harvard Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Stockdale, Christopher [Marquette University, Milwaukee, WI 53233 (United States); Chandra, Poonam [National Center for Radio Astronomy-TIFR, Pune 411007 (India); Smith, Randall [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Roy, Rupak; Bose, Subhash [Aryabhhata Research Institute of Observational Sciences, Nainital 263129 (India); Dwarkadas, Vikram [Department of Astronomy and Astrophysics, University of Chicago, Chicago, IL 60637 (United States); Sutaria, Firoza [Indian Institute of Astrophysics, Bangalore 560034 (India); Pooley, David, E-mail: nyadav@tifr.res.in, E-mail: akr@tifr.res.in [Department of Physics, Sam Houston State University, Huntsville, TX 77341 (United States)

    2014-02-10

    We present the radio observations and modeling of an optically bright Type II-P supernova (SN), SN 2012aw which exploded in the nearby galaxy Messier 95 (M95) at a distance of 10 Mpc. The spectral index values calculated using C, X, and K bands are smaller than the expected values for the optically thin regime. During this time, the optical bolometric light curve stays in the plateau phase. We interpret the low spectral-index values to be a result of electron cooling. On the basis of comparison between the Compton cooling timescale and the synchrotron cooling timescale, we find that the inverse Compton cooling process dominates over the synchrotron cooling process. We therefore model the radio emission as synchrotron emission from a relativistic electron population with a high energy cutoff. The cutoff is determined by comparing the electron cooling timescale, t {sub cool}, and the acceleration timescale, t-tilde {sub acc}. We constrain the mass-loss rate in the wind ( M-dot ?1.9×10{sup ?6} M{sub ?} yr{sup ?1}) and the equipartition factor between relativistic electrons and the magnetic field ( ?-tilde =?{sub e}/?{sub B}?1.12×10{sup 2}) through our modeling of radio emission. Although the time of explosion is fairly well constrained by optical observations within about two days, we explore the effect of varying the time of explosion to best fit the radio light curves. The best fit is obtained for the explosion date as 2012 March 15.3 UT.

  11. Low-energy electric dipole response of Sn isotopes

    E-Print Network [OSTI]

    P. Papakonstantinou; H. Hergert; V. Yu. Ponomarev; R. Roth

    2014-03-10

    We study the low-energy dipole (LED) strength distribution along the Sn isotopic chain in both the isoscalar (IS) and the isovector (IV, or E1) electric channels, to provide testable predictions and guidance for new experiments with stable targets and radioactive beams. We use the self-consistent Quasi-particle Random-Phase Approximation (QRPA) with finite-range interactions and mainly the Gogny D1S force. We analyze also the performance of a realistic two-body interaction supplemented by a phenomenological three-body contact term. We find that from N=50 and up to the N=82 shell closure (132Sn) the lowest-energy part of the IS-LED spectrum is dominated by a collective transition whose properties vary smoothly with neutron number and which cannot be interpreted as a neutron-skin oscillation. For the neutron-rich species this state contributes to the E1 strength below particle threshold, but much more E1 strength is carried by other, weak but numerous transitions around or above threshold. We find that strong structural changes in the spectrum take effect beyond N=82, namely increased LED strength and lower excitation energies. Our results with the Gogny interaction are compatible with existing data. On this basis we predict that a) the summed IS strength below particle threshold shall be of the same order of magnitude for N=50-82, b) the summed E1 strength up to approximately 12 MeV shall be similar for N=50-82 MeV, while c) the summed E1 strength below threshold shall be of the same order of magnitude for N ~ 64 - 82 and much weaker for the lighter, more-symmetric isotopes. We point out a general agreement of our results with other non-relativistic studies, the absence of a collective IS mode in some of those studies, and a possibly radical disagreement with relativistic models.

  12. Band-engineered Ge-on-Si lasers

    E-Print Network [OSTI]

    Liu, Jifeng

    We report optically-pumped Ge-on-Si lasers with direct gap emission near 1600 nm at room temperature. The Ge-on-Si material was band-engineered by tensile strain and n-type doping to compensate the energy difference between ...

  13. Ge#ng Started on HokieSpeed

    E-Print Network [OSTI]

    Crawford, T. Daniel

    Ge#ng Started on HokieSpeed Advanced Research Computing #12;Advanced Research Compu:ng;Advanced Research Compu:ng Important Login Informa:on · Account sheets provide login Compu:ng Ge#ng Started Steps 1. Sheet distributed provides your training account

  14. Hydrothermal synthesis of flowerlike SnO{sub 2} nanorod bundles and their application for lithium ion battery

    SciTech Connect (OSTI)

    Wen, Zhigang, E-mail: xh168688@126.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Department of Chemistry and Chemical Engineering, Qiannan Normal College for Nationalities, Duyun 558000 (China); Zheng, Feng, E-mail: fzheng@mail.csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Yu, Hongchun; Jiang, Ziran [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Liu, Kanglian [Department of Chemistry and Chemical Engineering, Qiannan Normal College for Nationalities, Duyun 558000 (China)

    2013-02-15

    SnO{sub 2} nanorod bundles were synthesized by hydrothermal method. Field-emission scanning electron microscopy and transmission electron microscopy images showed that the as-prepared flowerlike SnO{sub 2} nanorod bundles consist of tetragonal nanorods with size readily tunable. Their electrochemical properties and application as anode for lithium-ion battery were evaluated by galvanostatic discharge–charge testing and cycle voltammetry. SnO{sub 2} nanorod flowers possess improved discharge capacity of 694 mA h g{sup ?1} up to 40th cycle at 0.1 C. - Highlights: ? The flowerlike SnO{sub 2} nanorod bundles were synthesized by hydrothermal method. ? SnO{sub 2} nanorod bundles with tunable size by controlling concentration of SnCl{sub 4}. ? A probable formation mechanism of SnO{sub 2} nanorod bundles has been proposed.

  15. Excess carrier lifetimes in Ge layers on Si

    SciTech Connect (OSTI)

    Geiger, R., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch; Sigg, H., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Frigerio, J.; Chrastina, D.; Isella, G. [L-NESS, Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Süess, M. J. [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Scientific Center for Optical and Electron Microscopy (SCOPEM), ETH Zurich, 8093 Zurich (Switzerland); Spolenak, R. [Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Faist, J. [Institute for Quantum Electronics, ETH Zurich, 8093 Zurich (Switzerland)

    2014-02-10

    The excess charge carrier lifetimes in Ge layers grown on Si or germanium-on-insulator are measured by synchrotron based pump-probe transmission spectroscopy. We observe that the lifetimes do not strongly depend on growth parameters and annealing procedure, but on the doping profile. The defect layer at the Ge/Si interface is found to be the main non-radiative recombination channel. Therefore, the longest lifetimes in Ge/Si (2.6?ns) are achieved in sufficiently thick Ge layers with a built-in field, which repels electrons from the Ge/Si interface. Longer lifetimes (5.3?ns) are obtained in overgrown germanium-on-insulator due to the absence of the defective interface.

  16. The thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli, L. Ferre Llin, S. Cecchi, J. Frigerio, T. Etzelstorfer et al.

    E-Print Network [OSTI]

    Hague, Jim

    The thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli, L. Ferre Llin thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli,1 L. Ferre Llin,1 S. Cecchi,2 J June 2013) The thermoelectric and physical properties of superlattices consisting of modulation doped

  17. Nb3Sn quadrupoles in the LHC IR Phase I upgrade

    SciTech Connect (OSTI)

    Zlobin, A.V.; Johnstone, J.A.; Kashikhin, V.V.; Mokhov, N.V.; Rakhno, I.L.; de Maria, R.; Peggs, S.; Robert-Demolaize, G.; Wanderer, P.; /Brookhaven

    2008-06-01

    After a number of years of operation at nominal parameters, the LHC will be upgraded to a higher luminosity. This paper discusses the possibility of using a limited number of Nb{sub 3}Sn quadrupoles for hybrid optics layouts for the LHC Phase I luminosity upgrades with both NbTi and Nb{sub 3}Sn quadrupoles. Magnet parameters and issues related to using Nb{sub 3}Sn quadrupoles including aperture, gradient, magnetic length, field quality, operation margin, et cetera are discussed.

  18. Nb3Sn Quadrupoles in the LHC IR Phase I Upgrade

    SciTech Connect (OSTI)

    Zlobin,A.; Johnstone, J.; Kashikhin, V.; Mokhov, N.; Rakhno, I.; deMaria, R.; Peggs, S.; Robert-Demolaize, F.; Wanderer, P.

    2008-06-23

    After a number of years of operation at nominal parameters, the LHC will be upgraded for higher luminosity. This paper discusses the possibility of using a limited number of Nb{sub 3}Sn quadrupoles for hybrid optics layouts for the LHC Phase I luminosity upgrades with both NbTi and Nb{sub 3}Sn quadrupoles. Magnet parameters and issues related to using Nb{sub 3}Sn quadrupoles including aperture, gradient, magnetic length, field quality, operation margin, et cetera are discussed.

  19. Results from the first single cell Nb3Sn cavity coatings at Jlab

    SciTech Connect (OSTI)

    Eremeev, Grigory

    2015-09-01

    Nb3Sn is a promising superconducting material for SRF applications and has the potential to exceed the limitations of niobium. We have used the recently commissioned Nb3Sn coating system to investigate Nb3Sn coatings on several single cell cavities by applying the same coating procedure on several different single cells with different history and pre-coating surface preparation. We report on our findings with four 1.5 GHz CEBAF-shape single cell and one 1.3 GHz ILC-shape single cavities that were coated, inspected, and tested.

  20. On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer

    SciTech Connect (OSTI)

    Arapkina, Larisa V.; Yuryev, Vladimir A. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)] [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)

    2013-09-14

    Structural models of growing Ge hut clusters—pyramids and wedges—are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along <110> directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from the second monolayer, pass through cyclic formation of slightly asymmetrical and symmetrical clusters, with symmetrical ones appearing after addition of every fourth monolayer. We suppose that pyramids of symmetrical configurations composed by 2, 6, 10, etc., monolayers over the wetting layer are more stable than asymmetrical ones. This might explain less stability of pyramids in comparison with wedges in dense arrays forming at low temperatures of Ge deposition. Possible nucleation processes of pyramids and wedges on wetting layer patches from identical embryos composed by 8 dimers through formation of 1 monolayer high 16-dimer nuclei different only in their symmetry is discussed. Schematics of these processes are presented. It is concluded from precise STM measurements that top layers of wetting layer patches are relaxed when huts nucleate on them.

  1. Predicting the amount of hydrogen stripped by the SN explosion for SN 2002cx-like SNe Ia

    SciTech Connect (OSTI)

    Liu, Zheng-Wei; Chen, X. F.; Wang, B.; Han, Z. W. [Yunnan Observatories, Chinese Academy of Sciences, Kunming 650011 (China); Kromer, M. [Max-Planck-Institut für Astrophysik, Karl-Schwarzschild-Str. 1, D-85741 Garching (Germany); Fink, M.; Röpke, F. K. [Institut für Theoretische Physik und Astrophysik, Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany); Pakmor, R., E-mail: zwliu@ynao.ac.cn [Heidelberger Institut für Theoretische Studien, Schloss-Wolfsbrunnenweg 35, D-69118 Heidelberg (Germany)

    2013-12-01

    The most favored progenitor scenarios for Type Ia supernovae (SNe Ia) involve the single-degenerate (SD) scenario and the double-degenerate scenario. The absence of stripped hydrogen (H) in the nebular spectra of SNe Ia challenges the SD progenitor models. Recently, it was shown that pure deflagration explosion models of Chandrasekhar-mass white dwarfs, ignited off-center, reproduce the characteristic observational features of 2002cx-like SNe Ia very well. In this work we predict, for the first time, the amount of stripped H for the off-center, pure deflagration explosions. We find that their low kinetic energies lead to inefficient H mass stripping (? 0.01 M {sub ?}), indicating that the stripped H may be hidden in (observed) late-time spectra of SN 2002cx-like SNe Ia.

  2. Ratio of jet cross sections at root s=630 GeV and 1800 GeV

    E-Print Network [OSTI]

    Baringer, Philip S.; Bean, Alice; Coppage, Don; Hebert, C.

    2001-03-01

    The DO Collaboration has measured the inclusive jet cross section in (p) over barp collisions at roots = 630 GeV. The results for pseudorapidities \\ eta \\ < 0.5 are combined with our previous results at roots = 1800 GeV ...

  3. Ion Implanted Ge:B Far Infrard Blocked Impurity Band Detectors

    E-Print Network [OSTI]

    Beeman, J.W.; Goyal, S.; Reichertz, L.A.; Haller, E.E.

    2008-01-01

    +16 1.E+15 1.E+14 Depth into Ge Crystal Surface (Å) Figure 5devices does not match that of Ge:Ga photoconductors, whichimplants or stacking devices) Ge IBIB detectors will reach

  4. ALFVEN-WAVE OSCILLATIONS IN A SPHERE, WITH APPLICATIONS TO ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Markiewicz, R.S.

    2011-01-01

    Rev. B 13,4626 (1976). For Ge(4:2) m is the average of thediscussed for EHD in unstressed Ge (B II )TO ELECI'RON-OOLE DROPS IN Ge R. S. Markiewicz January 1978

  5. NUCLEATION PHENOMENA IN THE FORMATION OF ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Westervelt, R.M.

    2010-01-01

    lO cjl(K) Symbol erg cm ) Ge - 0.064 T2 Ref. x x Si Ref. T2constructed the ultra-sensitive Ge photodetector which wasand method of mounting. The Ge sample is electrically and

  6. Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy

    E-Print Network [OSTI]

    2008-01-01

    Photo-oxidation of Ge Nanocrystals: Kinetic Measurements byBerkeley, CA, 94720 ABSTRACT Ge nanocrystals are formed inthe Raman spectra of the Ge nanocrystals in-situ. The

  7. Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)

    E-Print Network [OSTI]

    Guchhait, S.

    2011-01-01

    segregation in Mn-doped Ge”, Journal of Applied Physics 101,Room-temperature ferromagnetism in Ge 1-x Mn x nanowires”,BC high-?/metal gate Ge/C alloy pMOSFETs fabricated directly

  8. Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals

    SciTech Connect (OSTI)

    Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K. [College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan)

    2013-12-04

    The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ?10{sup 3} ?cm for un-implanted samples to ?10{sup ?2} ?cm for as-implanted ones are observed. The resistivity is further decreased to ?10{sup ?3} ?cm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33 eV) related to the Ge donor is observed in 1000 °C annealed samples.

  9. GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

    SciTech Connect (OSTI)

    Bom, N. M.; Soares, G. V.; Hartmann, S.; Bordin, A.; Radtke, C.

    2014-10-06

    Deuterium (D) incorporation in GeO{sub 2}/Ge structures following D{sub 2} annealing was investigated. Higher D concentrations were obtained for GeO{sub 2}/Ge samples in comparison to their SiO{sub 2}/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D{sub 2} constitute defect sites for D incorporation, analogous to defects at the SiO{sub 2}/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D{sub 2} annealing, especially in the high temperature regime of the present study (>450?°C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO{sub 2}/Si counterparts.

  10. Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

    SciTech Connect (OSTI)

    Haegel, N.M.

    1985-11-01

    An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10/sup 8/ photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H/sub 2/ atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs.

  11. Ion beam synthesis of SiGe alloy layers

    SciTech Connect (OSTI)

    Im, Seongil

    1994-05-01

    Procedures required for minimizing structural defects generated during ion beam synthesis of SiGe alloy layers were studied. Synthesis of 200 mm SiGe alloy layers by implantation of 120-keV Ge ions into <100> oriented Si wafers yielded various Ge peak concentrations after the following doses, 2{times}10{sup 16}cm{sup {minus}2}, 3{times}10{sup 16}cm{sup {minus}2} (mid), and 5{times}10{sup 16}cm{sup {minus}2} (high). Following implantation, solid phase epitaxial (SPE) annealing in ambient N2 at 800C for 1 hr. resulted in only slight redistribution of the Ge. Two kinds of extended defects were observed in alloy layers over 3{times}l0{sup 16}cm{sup {minus}2}cm dose at room temperature (RT): end-of-range (EOR) dislocation loops and strain-induced stacking faults. Density of EOR dislocation loops was much lower in alloys produced by 77K implantation than by RT implantation. Decreasing the dose to obtain 5 at% peak Ge concentration prevents strain relaxation, while those SPE layers with more than 7 at% Ge peak show high densities of misfit- induced stacking faults. Sequential implantation of C following high dose Ge implantation (12 at% Ge peak concentration in layer) brought about a remarkable decrease in density of misfit-induced stacking faults. For peak implanted C > 0.55 at%, stacking fault generation in the epitaxial layer was suppressed, owing to strain compensation by C atoms in the SiGe lattice. A SiGe alloy layer with 0.9 at% C peak concentration under a 12 at% Ge peak exhibited the best microstructure. Results indicate that optimum Ge/C ratio for strain compensation is between 11 and 22. The interface between amorphous and regrown phases (a/c interface) had a dramatic morphology change during its migration to the surface. Initial <100> planar interface decomposes into a <111> faceted interface, changing the growth kinetics; this is associated with strain relaxation by stacking fault formation on (111) planes in the a/c interface.

  12. Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen* and D. K. Saldin

    E-Print Network [OSTI]

    Saldin, Dilano

    Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen quantitatively the geometry of mixed Ge-Si dimers on a single domain Si 001 2 1 surface by azimuthal scanning core-level photoelectron diffraction. By analyzing Ge 3d diffraction patterns from Ge/Si 001 at 0.1 ML

  13. Microstructure and Sn crystal orientation evolution in Sn-3.5Ag lead-free solders in high temperature packaging applications

    SciTech Connect (OSTI)

    Zhou, Bite [ORNL; Muralidharan, Govindarajan [ORNL; Kurumaddali, Nalini Kanth [ORNL; Parish, Chad M [ORNL; Leslie, Dr Scott [Powerex Inc; Bieler, T. R. [Michigan State University, East Lansing

    2014-01-01

    Understanding the reliability of eutectic Sn-3.5Ag lead-free solders in high temperature packaging applications is of significant interest in power electronics for the next generation electric grid. Large area (2.5mm 2.5mm) Sn-3.5Ag solder joints between silicon dies and direct bonded copper substrates were thermally cycled between 5 C and 200 C. Sn crystal orientation and microstructure evolution during thermal cycling were characterized by electron backscatter diffraction (EBSD) in scanning electron microscope (SEM). Comparisons are made between observed initial texture and microstructure and its evolution during thermal cycling. Gradual lattice rotation and grain boundary misorientation evolution suggested the continuous recrystallization mechanism. Recrystallization behavior was correlated with dislocation slip activities.

  14. Photometry of SN 2002ic and implications for the progenitor mass-loss history

    E-Print Network [OSTI]

    Wood-Vasey, W.M.; Wang, L.; Aldering, G.

    2004-01-01

    Photometry of SN 2002ic and Implications for the Progenitormaximum and late-time optical photometry of the Type Ia/IInbetween the observed photometry points and the template ?t

  15. Development of Nb{sub 3}Sn Cavity Vapor Diffusion Deposition System

    SciTech Connect (OSTI)

    Eremeev, Grigory V.; Macha, Kurt M.; Clemens, William A.; Park, HyeKyoung; Williams, R. Scott

    2014-02-01

    Nb{sub 3}Sn is a BCS superconductors with the superconducting critical temperature higher than that of niobium, so theoretically it surpasses the limitations of niobium in RF fields. The feasibility of technology has been demonstrated at 1.5 GHz with Nb{sub 3}Sn vapor deposition technique at Wuppertal University. The benefit at these frequencies is more pronounced at 4.2 K, where Nb{sub 3}Sn coated cavities show RF resistances an order of magnitude lower than that of niobium. At Jefferson Lab we started the development of Nb{sub 3}Sn vapor diffusion deposition system within an R\\&D development program towards compact light sources. Here we present the current progress of the system development.

  16. Microscopic description of isoscalar giant resonance excitations in ??Ca and ¹¹?SN nuclei 

    E-Print Network [OSTI]

    Karki, Bhishma

    2000-01-01

    This thesis presents a microscopic description of isoscalar giant resonance excitations in ??Ca and ¹¹? Sn nuclei within the self-consistent Skyrme-Hartree-Fock-Random-Phase-Approximation (HF-RPA) theory. Such characteristic features...

  17. Radiopharmaceutical stannic Sn-117m chelate compositions and methods of use

    DOE Patents [OSTI]

    Srivastava, Suresh C. (Setauket, NY); Meinken, George E. (Middle Island, NY)

    2001-01-01

    Radiopharmaceutical compositions including .sup.117m Sn labeled stannic (Sn.sup.4+) chelates are provided. The chelates are preferably polyhydroxycarboxylate, such as oxalates, tartrates, citrates, malonates, gluconates, glucoheptonates and the like. Methods of making .sup.117m Sn-labeled (Sn.sup.4+) polyhydroxycarboxylic chelates are also provided. The foregoing pharmaceutical compositions can be used in methods of preparing bone for scintigraphical analysis, for radiopharmaceutical skeletal imaging, treatment of pain resulting from metastatic bone involvement, treatment of primary bone cancer, treatment of cancer resulting from metastatic spread to bone from other primary cancers, treatment of pain resulting from rheumatoid arthritis, treatment of bone/joint disorders and to monitor radioactively the skeletal system.

  18. Molecular Mimicry Regulates ABA Signaling by SnRK2 Kinases and PP2C Phosphatases

    SciTech Connect (OSTI)

    Soon, Fen-Fen; Ng, Ley-Moy; Zhou, X. Edward; West, Graham M.; Kovach, Amanda; Tan, M.H. Eileen; Suino-Powell, Kelly M.; He, Yuanzheng; Xu, Yong; Chalmers, Michael J.; Brunzelle, Joseph S.; Zhang, Huiming; Yang, Huaiyu; Jiang, Hualiang; Li, Jun; Yong, Eu-Leong; Cutler, Sean; Zhu, Jian-Kang; Griffin, Patrick R.; Melcher, Karsten; Xu, H. Eric (Van Andel); (Scripps); (NWU); (Purdue); (UCR); (Chinese Aca. Sci.); (NU Singapore)

    2014-10-02

    Abscisic acid (ABA) is an essential hormone for plants to survive environmental stresses. At the center of the ABA signaling network is a subfamily of type 2C protein phosphatases (PP2Cs), which form exclusive interactions with ABA receptors and subfamily 2 Snfl-related kinase (SnRK2s). Here, we report a SnRK2-PP2C complex structure, which reveals marked similarity in PP2C recognition by SnRK2 and ABA receptors. In the complex, the kinase activation loop docks into the active site of PP2C, while the conserved ABA-sensing tryptophan of PP2C inserts into the kinase catalytic cleft, thus mimicking receptor-PP2C interactions. These structural results provide a simple mechanism that directly couples ABA binding to SnRK2 kinase activation and highlight a new paradigm of kinase-phosphatase regulation through mutual packing of their catalytic sites.

  19. Turning off the lights: Supernova SN1987A 30 years on

    E-Print Network [OSTI]

    de Grijs, Richard

    2015-01-01

    Decades-long repeat observations of supernova SN1987A offer us unique, real-time insights into the violent death of a massive star and its long-term environmental effects, until its eventual switch-off.

  20. EARLY- AND LATE-TIME OBSERVATIONS OF SN 2008ha: ADDITIONAL CONSTRAINTS...

    Office of Scientific and Technical Information (OSTI)

    be weak in such events. It is therefore likely that SN 2008ha was the result of a thermonuclear explosion of a carbon-oxygen WD. Carbon features at maximum light show that...

  1. Design of HD2: a 15 T Nb3Sn dipole with a 35 mm bore

    E-Print Network [OSTI]

    Sabbi, G.

    2009-01-01

    a 15 Tesla Nb 3 Sn Dipole with a 35 mm Bore G. Sabbi, S.E.dipole field above 15 T, a 35 mm bore, and nominal fieldstainless steel tube, providing a 35 mm diameter clear bore.

  2. Optical and electrochemical studies of polyaniline/SnO{sub 2} fibrous nanocomposites

    SciTech Connect (OSTI)

    Manivel, P.; Ramakrishnan, S.; Kothurkar, Nikhil K.; Balamurugan, A.; Ponpandian, N.; Mangalaraj, D.; Viswanathan, C.

    2013-02-15

    Graphical abstract: Fiber with porous like structure of PANI/SnO{sub 2} nanocomposites were prepared by simplest in situ chemical polymerization method. The PL emission spectra revealed that the band from 404 and 436 nm which is related with oxygen vacancies. The excellent electrochemical properties of composite electrode show the specific capacitance of 173 F/g at a scan rate of 25 m V/s. Display Omitted Highlights: ? Self assembled PANI/SnO{sub 2} nanocomposites were synthesized by simple polymerization method. ? Electrochemical behavior of PANI/SnO{sub 2} nanocomposites electrode was analyzed by CV. ? Nanocomposites exhibit a higher specific capacitance of 173 F/g, compared with pure SnO{sub 2}. -- Abstract: Polyaniline (PANI)/tin oxide (SnO{sub 2}) fibrous nanocomposites were successfully prepared by an in situ chemical polymerization method with suitable conditions. The obtained composites were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy, photoluminescence (PL), electrical conductivity and cyclic voltammetry studies (CV). The XRD pattern of the as-prepared sample shows the presence of tetragonal SnO{sub 2} and the crystalline structure of SnO{sub 2} was not affected with the incorporation of PANI. The FTIR analysis confirms the uniform attachment of PANI on the surface of SnO{sub 2} nanostructures. SEM images show a fibrous agglomerated structure of PANI/SnO{sub 2}. The PL emission spectra revealed that the band from 404 and 436 nm which is related with oxygen vacancies. The electrochemical behavior of the PANI/SnO{sub 2} composite electrode was evaluated in a H{sub 2}SO{sub 4} solution using cyclic voltammetry. The composite electrode exhibited a specific capacitance of 173 F/g at a scan rate 25 mV/s. Thus the as-prepared PANI/SnO{sub 2} composite shows excellent electrochemical properties, suggesting that this composite is a promising material for supercapacitors.

  3. Synthesis, structure, and bonding in K12Au21Sn4. A polar intermetallic compound with dense Au20 and open AuSn4 layers

    SciTech Connect (OSTI)

    Li, Bin; Kim, Sung-Jin; Miller, Gordon J.; and Corbett, John D.

    2009-10-29

    The new phase K{sub 12}Au{sub 21}Sn{sub 4} has been synthesized by direct reaction of the elements at elevated temperatures. Single crystal X-ray diffraction established its orthorhombic structure, space group Pmmn (No. 59), a = 12.162(2); b = 18.058(4); c = 8.657(2) {angstrom}, V = 1901.3(7) {angstrom}{sup 3}, and Z = 2. The structure consists of infinite puckered sheets of vertex-sharing gold tetrahedra (Au{sub 20}) that are tied together by thin layers of alternating four-bonded-Sn and -Au atoms (AuSn{sub 4}). Remarkably, the dense but electron-poorer blocks of Au tetrahedra coexist with more open and saturated Au-Sn layers, which are fragments of a zinc blende type structure that maximize tetrahedral heteroatomic bonding outside of the network of gold tetrahedra. LMTO band structure calculations reveal metallic properties and a pseudogap at 256 valence electrons per formula unit, only three electrons fewer than in the title compound and at a point at which strong Au-Sn bonding is optimized. Additionally, the tight coordination of the Au framework atoms by K plays an important bonding role: each Au tetrahedra has 10 K neighbors and each K atom has 8-12 Au contacts. The appreciably different role of the p element Sn in this structure from that in the triel members in K{sub 3}Au{sub 5}In and Rb{sub 2}Au{sub 3}Tl appears to arise from its higher electron count which leads to better p-bonding (valence electron concentrations = 1.32 versus 1.22).

  4. Piezooptic Coefficients and Acoustic Wave Velocities in Sn2P2S6 Crystals

    E-Print Network [OSTI]

    O. Mys; I. Martynyuk-Lototska; A. Grabar; Yu. Vysochanskii; R. Vlokh

    2007-06-28

    Piezooptic coefficients of Sn2P2S6 crystals are experimentally determined for l=623.8 nm and T=293 K with the aid of interferometric technique. The components of the elastic stiffness tensor for these crystals are calculated on the basis of studies for the acoustic wave velocities. It is shown that acoustooptic figure of merit can achieve extremely high values for Sn2P2S6 crystals (M2 - 2x10-12s3/kg2).

  5. Aligned Epitaxial SnO2 Nanowires on Sapphire: Growth and Device Applications Supporting

    E-Print Network [OSTI]

    Zhou, Chongwu

    maximum tube furnace from Lindberg/Blue M with a ramping rate of 23°C/min. An 1100°C one-inch tube furnace-inch furnace to complete a thermal de-wetting step at 800°C for 15 minutes in ambient air. The synthesis of aligned SnO2 nanowires was carried out in a horizontal quartz tube in the one-inch furnace. The Sn powder

  6. Clues to the nature of SN 2009ip from photometric and spectroscopic evolution to late times

    SciTech Connect (OSTI)

    Graham, M. L. [Astronomy Department, University of California, Berkeley, CA 94720 (United States); Sand, D. J. [Physics Department, Texas Tech University, Lubbock, TX 79409 (United States); Valenti, S.; Howell, D. A.; Parrent, J. [Las Cumbres Observatory Global Telescope Network, Goleta, CA 93117 (United States); Halford, M.; Zaritsky, D. [Astronomy Department, University of Arizona, Tucson, AZ 85721 (United States); Bianco, F. [Department of Physics, New York University, 4 Washington Place, New York, NY 10003 (United States); Rest, A. [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD 21218 (United States); Dilday, B., E-mail: melissagraham@berkeley.edu [North Idaho College, 1000 W. Garden Avenue, Coeur d'Alene, ID 83814 (United States)

    2014-06-01

    We present time series photometric and spectroscopic data for the transient SN 2009ip from the start of its outburst in 2012 September until 2013 November. These data were collected primarily with the new robotic capabilities of the Las Cumbres Observatory Global Telescope Network, a specialized facility for time domain astrophysics, and includes supporting high-resolution spectroscopy from the Southern Astrophysical Research Telescope, Kitt Peak National Observatory, and Gemini Observatory. Based on our nightly photometric monitoring, we interpret the strength and timing of fluctuations in the light curve as interactions between fast-moving ejecta and an inhomogeneous circumstellar material (CSM) produced by past eruptions of this massive luminous blue variable (LBV) star. Our time series of spectroscopy in 2012 reveals that, as the continuum and narrow H? flux from CSM interactions declines, the broad component of H? persists with supernova (SN)-like velocities that are not typically seen in LBVs or SN impostor events. At late times, we find that SN 2009ip continues to decline slowly, at ? 0.01 mag day{sup –1}, with small fluctuations in slope similar to Type IIn supernovae (SNe IIn) or SN impostors but no further LBV-like activity. The late-time spectrum features broad calcium lines similar to both late-time SNe and SN impostors. In general, we find that the photometric and spectroscopic evolution of SN 2009ip is more similar to SNe IIn than either continued eruptions of an LBV star or SN impostors but we cannot rule out a nonterminal explosion. In this context, we discuss the implications for episodic mass loss during the late stages of massive star evolution.

  7. The electrochemical reactions of SnO2 with Li and Na: a study using thin films and mesoporous carbons

    SciTech Connect (OSTI)

    Gorka, Joanna [ORNL; Baggetto, Loic [ORNL; Keum, Jong Kahk [ORNL; Mahurin, Shannon Mark [ORNL; Mayes, Richard T [ORNL; Dai, Sheng [ORNL; Veith, Gabriel M [ORNL

    2015-01-01

    In this work we have determined the room temperature electrochemical reactivity of SnO2 thin films and mesoporous carbons filled with SnO2 anodes with Na, and compare the results with those obtained during the reaction with Li. We show that SnO2 can reversibly deliver up to 6.2 Li/SnO2 whereas the reaction with Na is significantly limited. The initial discharge capacity is equivalent to less than 4 Na/SnO2, which is expected to correspond to the formation of 2 Na2O and Sn. This limited discharge capacity suggests the negative role of the formed Na2O matrix upon the reversible reaction of Sn clusters. Moreover, the reversible cycling of less than 1 Na/SnO2, despite the utilization of 6-7 nm SnO2 particles, is indicative of sluggish reaction kinetics. The origin of this significant capacity reduction is likely due to the formation of a diffusion limiting interface. Furthermore, there is a larger apparent hysteresis compared to Li. These results point to the need to design composite structures of SnO2 nanoparticles with suitable morphological and conductivity components.

  8. GeV Emission from Collisional Magnetized Gamma Ray Bursts

    E-Print Network [OSTI]

    P. Mészáros; M. J. Rees

    2011-04-26

    Magnetic fields may play a dominant role in gamma-ray bursts, and recent observations by the Fermi satellite indicate that GeV radiation, when detected, arrives delayed by seconds from the onset of the MeV component. Motivated by this, we discuss a magnetically dominated jet model where both magnetic dissipation and nuclear collisions are important. We show that, for parameters typical of the observed bursts, such a model involving a realistic jet structure can reproduce the general features of the MeV and a separate GeV radiation component, including the time delay between the two. The model also predicts a multi-GeV neutrino component.

  9. Pion interferometry in Au plus Au and Cu plus Cu collisions at s(NN)=62.4 and 200 Ge

    E-Print Network [OSTI]

    Abelev, B. I.; Aggarwal, M. M.; Ahammed, Z.; Anderson, B. D.; Arkhipkin, D.; Averichev, G. S.; Balewski, J.; Barannikova, O.; Barnby, L. S.; Baudot, J.; Baumgart, S.; Beavis, D. R.; Bellwied, R.; Benedosso, F.; Betancourt, M. J.; Betts, R. R.; Bhasin, A.; Bhati, A. K.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Biritz, B.; Bland, L. C.; Bombara, M.; Bonner, B. E.; Botje, M.; Bouchet, J.; Braidot, E.; Brandin, A. V.; Bruna, E.; Bueltmann, S.; Burton, T. P.; Bystersky, M.; Cai, X. Z.; Caines, H.; Sanchez, M. Calderon de la Barca; Catu, O.; Cebra, D.; Cendejas, R.; Cervantes, M. C.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H. F.; Chen, J. H.; Chen, J. Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Choi, K. E.; Christie, W.; Clarke, R. F.; Codrington, M. J. M.; Corliss, R.; Cormier, T. M.; Cosentino, M. R.; Cramer, J. G.; Crawford, H. J.; Das, D.; Dash, S.; Daugherity, M.; De Silva, L. C.; Dedovich, T. G.; DePhillips, M.; Derevschikov, A. A.; de Souza, R. Derradi; Didenko, L.; Djawotho, P.; Dogra, S. M.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Du, F.; Dunlop, J. C.; Mazumdar, M. R. Dutta; Edwards, W. R.; Efimov, L. G.; Elhalhuli, E.; Elnimr, M.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Eun, L.; Fachini, P.; Fatemi, R.; Fedorisin, J.; Feng, A.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Gagliardi, Carl A.; Gaillard, L.; Ganti, M. S.; Gangadharan, D. R.; Garcia-Solis, E. J.; Geromitsos, A.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gorbunov, Y. N.; Gordon, A.; Grebenyuk, O.; Grosnick, D.; Grube, B.; Guertin, S. M.; Guimaraes, K. S. F. F.; Gupta, A.; Gupta, N.; Guryn, W.; Haag, B.; Hallman, T. J.; Hamed, A.; Harris, J. W.; He, W.; Heinz, M.; Heppelmann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffman, A. M.; Hoffmann, G. W.; Hofman, D. J.; Hollis, R. S.; Huang, H. Z.; Humanic, T. J.; Igo, G.; Iordanova, A.; Jacobs, P.; Jacobs, W. W.; Jakl, P.; Jena, C.; Jin, F.; Jones, C. L.; Jones, P. G.; Joseph, J.; Judd, E. G.; Kabana, S.; Kajimoto, K.; Kang, K.; Kapitan, J.; Keane, D.; Kechechyan, A.; Kettler, D.; Khodyrev, V. Yu; Kikola, D. P.; Kiryluk, J.; Kisiel, A.; Klein, S. R.; Knospe, A. G.; Kocoloski, A.; Koetke, D. D.; Kopytine, M.; Korsch, W.; Kotchenda, L.; Kouchpil, V.; Kravtsov, P.; Kravtsov, V. I.; Krueger, K.; Krus, M.; Kuhn, C.; Kumar, L.; Kurnadi, P.; Lamont, M. A. C.; Landgraf, J. M.; LaPointe, S.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, C. -H; Lee, J. H.; Leight, W.; LeVine, M. J.; Li, N.; Li, C.; Li, Y.; Lin, G.; Lindenbaum, S. J.; Lisa, M. A.; Liu, F.; Liu, J.; Liu, L.; Ljubicic, T.; Llope, W. J.; Longacre, R. S.; Love, W. A.; Lu, Y.; Ludlam, T.; Ma, G. L.; Ma, Y. G.; Mahapatra, D. P.; Majka, R.; Mall, O. I.; Mangotra, L. K.; Manweiler, R.; Margetis, S.; Markert, C.; Matis, H. S.; Matulenko, Yu A.; McShane, T. S.; Meschanin, A.; Milner, R.; Minaev, N. G.; Mioduszewski, Saskia; Mischke, A.; Mitchell, J.; Mohanty, B.; Morozov, D. A.; Munhoz, M. G.; Nandi, B. K.; Nattrass, C.; Nayak, T. K.; Nelson, J. M.; Netrakanti, P. K.; Ng, M. J.; Nogach, L. V.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Okada, H.; Okorokov, V.; Olson, D.; Pachr, M.; Page, B. S.; Pal, S. K.; Pandit, Y.; Panebratsev, Y.; Panitkin, S. Y.; Pawlak, T.; Peitzmann, T.; Perevoztchikov, V.; Perkins, C.; Peryt, W.; Phatak, S. C.; Planinic, M.; Pluta, J.; Poljak, N.; Poskanzer, A. M.; Potukuchi, B. V. K. S.; Prindle, D.; Pruneau, C.; Pruthi, N. K.; Putschke, J.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Redwine, R.; Reed, R.; Ridiger, A.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Rose, A.; Roy, C.; Ruan, L.; Russcher, M. J.; Sahoo, R.; Sakrejda, I.; Sakuma, T.; Salur, S.; Sandweiss, J.; Sarsour, M.; Schambach, J.; Scharenberg, R. P.; Schmitz, N.; Seger, J.; Selyuzhenkov, I.; Seyboth, P.; Shabetai, A.; Shahaliev, E.; Shao, M.; Sharma, M.; Shi, S. S.; Shi, X. -H; Sichtermann, E. P.; Simon, F.; Singaraju, R. N.; Skoby, M. J.; Smirnov, N.; Snellings, R.; Sorensen, P.; Sowinski, J.; Spinka, H. M.; Srivastava, B.; Stadnik, A.; Stanislaus, T. D. S.; Staszak, D.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Suarez, M. C.; Subba, N. L.; Sumbera, M.; Sun, X. M.; Sun, Y.; Sun, Z.; Surrow, B.; Symons, T. J. M.; de Toledo, A. Szanto; Takahashi, J.; Tang, A. H.; Tang, Z.; Tarnowsky, T.; Thein, D.; Thomas, J. H.; Tian, J.; Timmins, A. R.; Timoshenko, S.; Tlusty, D.; Tokarev, M.; Trainor, T. A.; Tram, V. N.; Trattner, A. L.; Trentalange, S.; Tribble, Robert E.; Tsai, O. D.; Ulery, J.; Ullrich, T.; Underwood, D. G.; Van Buren, G.; van Leeuwen, M.; Vander Molen, A. M.; Vanfossen, J. A., Jr.; Varma, R.; Vasconcelos, G. M. S.; Vasilevski, I. M.; Vasiliev, A. N.; Videbaek, F.; Vigdor, S. E.; Viyogi, Y. P.; Vokal, S.; Voloshin, S. A.; Wada, M.; Waggoner, W. T.; Walker, M.

    2009-01-01

    REVIEW C 80, 024905 (2009) Pion interferometry in Au+ Au and Cu+ Cu collisions at ?sN N = 62.4 and 200 GeV B. I. Abelev,8 M. M. Aggarwal,30 Z. Ahammed,47 B. D. Anderson,18 D. Arkhipkin,12 G. S. Averichev,11 J. Balewski,22 O. Barannikova,8 L. S. Barnby...,2 J. Baudot,16 S. Baumgart,52 D. R. Beavis,3 R. Bellwied,50 F. Benedosso,27 M. J. Betancourt,22 R. R. Betts,8 A. Bhasin,17 A. K. Bhati,30 H. Bichsel,49 J. Bielcik,10 J. Bielcikova,10 B. Biritz,6 L. C. Bland,3 M. Bombara,2 B. E. Bonner,36 M. Botje...

  10. GE Store for Technology is Open for Business | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear Physics (NP)aboutRio deCooperation atThe GE

  11. Greatly improved interfacial passivation of in-situ high ? dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)

    SciTech Connect (OSTI)

    Chu, R. L. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Liu, Y. C.; Lee, W. C.; Huang, M. L.; Kwo, J., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, T. D.; Hong, M., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Pi, T. W. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

    2014-05-19

    A high-quality high-?/Ge interface has been achieved by combining molecule beam epitaxy grown Ge epitaxial layer and in-situ deposited high ? dielectric. The employment of Ge epitaxial layer has sucessfully buried and/or removed the residue of unfavorable carbon and native oxides on the chemically cleaned and ultra-high vacuum annealed Ge(100) wafer surface, as studied using angle-resolved x-ray photoelectron spectroscopy. Moreover, the scanning tunneling microscopy analyses showed the significant improvements in Ge surface roughness from 3.5?Å to 1?Å with the epi-layer growth. Thus, chemically cleaner, atomically more ordered, and morphologically smoother Ge surfaces were obtained for the subsquent deposition of high ? dielectrics, comparing with those substrates without Ge epi-layer. The capacitance-voltage (C-V) characteristics and low extracted interfacial trap density (D{sub it}) reveal the improved high-?/Ge interface using the Ge epi-layer approach.

  12. Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al{sub 2}O{sub 3}/Ge structures

    SciTech Connect (OSTI)

    Zhang, Rui [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan) [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); School of Electronic Science and Engineering, Nanjing University, 22 Hankou Road, Nanjing 210093 (China); Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)] [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2013-02-25

    The ultrathin GeO{sub x}/Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al{sub 2}O{sub 3}/Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO{sub x} layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of {approx}0.3 nm with an increase in the GeO{sub x} thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of {approx}0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO{sub x}/Ge interfaces on Ge (100) and (111) surfaces.

  13. Origin of the pearl necklace of SN1987A

    E-Print Network [OSTI]

    Jacques Moret-Bailly

    2006-07-12

    The bright circles observed around stars are usually considered as produced by shock waves; but this interpretation does not explain easily the bright spots of the "pearl necklace" of NS 1987A supernova. Assuming that the central object of SN 1987A is a neutron star heated by the accretion of a low density cloud, non-linear optics, in particular superradiance and impulsive stimulated Raman scattering (ISRS), is needed to take into account the high intensity of the radiated light. Where the temperature of the surrounding gas decreases enough to allow a combination of protons and electrons into atomic hydrogen in despite of the low density, a spherical shell absorbs in particular the Lyman alpha line, but does not populate much the 2P state because a tangential superradiance appears until the exciting line is almost absorbed; the increase of the 2P population resulting from the disappearance of the superradiance produces a redshift, so that almost all energy of a wide band is transferred to tangential modes making an UV pearl necklace in a given direction of observation. In a column of UV light making a pearl, atomic lines are excited enough to produce new, co-linear superradiances, in particular visible.

  14. Stable retrograde orbits around the triple system 2001 SN263

    E-Print Network [OSTI]

    Araujo, R A N; Prado, A F B A

    2015-01-01

    The NEA 2001 SN263 is the target of the ASTER MISSION - First Brazilian Deep Space Mission. Araujo et al. (2012), characterized the stable regions around the components of the triple system for the planar and prograde cases. Knowing that the retrograde orbits are expected to be more stable, here we present a complementary study. We now considered particles orbiting the components of the system, in the internal and external regions, with relative inclinations between $90^{\\circ}< I \\leqslant180^{\\circ}$, i.e., particles with retrograde orbits. Our goal is to characterize the stable regions of the system for retrograde orbits, and then detach a preferred region to place the space probe. For a space mission, the most interesting regions would be those that are unstable for the prograde cases, but stable for the retrograde cases. Such configuration provide a stable region to place the mission probe with a relative retrograde orbit, and, at the same time, guarantees a region free of debris since they are expect...

  15. THE PROGENITOR OF SN 2011ja: CLUES FROM CIRCUMSTELLAR INTERACTION

    SciTech Connect (OSTI)

    Chakraborti, Sayan [Institute for Theory and Computation, Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Ray, Alak; Yadav, Naveen [Tata Institute of Fundamental Research, 1 Homi Bhabha Road, Colaba, Mumbai 400 005 (India); Smith, Randall [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Ryder, Stuart [Australian Astronomical Observatory, P.O. Box 915, North Ryde, NSW 1670 (Australia); Sutaria, Firoza [Indian Institute of Astrophysics, Koramangala, Bangalore (India); Dwarkadas, Vikram V. [Department of Astronomy and Astrophysics, University of Chicago, 5640 South Ellis Avenue, Chicago, IL 60637 (United States); Chandra, Poonam [Department of Physics, Royal Military College of Canada, Kingston, ON K7K 7B4 (Canada); Pooley, David [Department of Physics, Sam Houston State University, Huntsville, TX (United States); Roy, Rupak, E-mail: schakraborti@fas.harvard.edu [Aryabhatta Research Institute of Observational Sciences, Manora Peak, Nainital (India)

    2013-09-01

    Massive stars, possibly red supergiants, which retain extended hydrogen envelopes until core collapse, produce Type II plateau (IIP) supernovae. The ejecta from these explosions shocks the circumstellar matter originating from the mass loss of the progenitor during the final phases of its life. This interaction accelerates particles to relativistic energies which then lose energy via synchrotron radiation in the shock-amplified magnetic fields and inverse Compton scattering against optical photons from the supernova. These processes produce different signatures in the radio and X-ray parts of the electromagnetic spectrum. Observed together, they allow us to break the degeneracy between shock acceleration and magnetic field amplification. In this work, we use X-rays observations from the Chandra and radio observations from the Australia Telescope Compact Array to study the relative importance of processes which accelerate particles and those which amplify magnetic fields in producing the non-thermal radiation from SN 2011ja. We use radio observations to constrain the explosion date. Multiple Chandra observations allow us to probe the history of variable mass loss from the progenitor. The ejecta expands into a low-density bubble followed by interaction with a higher density wind from a red supergiant consistent with M{sub ZAMS} {approx}> 12 M{sub Sun }. Our results suggest that a fraction of Type IIP supernovae may interact with circumstellar media set up by non-steady winds.

  16. Episodic Mass Loss and Pre-SN Circumstellar Envelopes

    E-Print Network [OSTI]

    Nathan Smith

    2008-02-13

    I discuss observational clues concerning episodic mass-loss properties of massive stars in the time before the final supernova explosion. In particular, I will focus on the mounting evidence that LBVs and related stars are candidates for supernova progenitors, even though current paradigms place them at the end of core-H burning. Namely, conditions in the immediate circumstellar environment within a few 10$^2$ AU of Type IIn supernovae require very high progenitor mass-loss rates. Those rates are so high that the only known stars that come close are LBVs during rare giant eruptions. I will highlight evidence from observations of some recent extraordinary supernovae suggesting that explosive or episodic mass loss (a.k.a. LBV eruptions like the 19th century eruption of Eta Car) occur in the 5-10 years immediately preceding the SN. Finally, I will discuss some implications for stellar evolution from these SNe, the most important of which is the observational fact that the most massive stars can indeed make it to the ends of their lives with substantial H envelopes intact, even at Solar metallicity.

  17. Direct reaction measurements with a 132Sn radioactive ion beam

    E-Print Network [OSTI]

    K. L. Jones; A. S. Adekola; D. W. Bardayan; J. C. Blackmon; K. Y. Chae; K. A. Chipps; J. A. Cizewski; L. Erikson; C. Harlin; R. Hatarik; R. Kapler; R. L. Kozub; J. F. Liang; R. Livesay; Z. Ma; B. H. Moazen; C. D. Nesaraja; F. M. Nunes; S. D. Pain; N. P. Patterson; D. Shapira; J. F. Shriner Jr; M. S. Smith; T. P. Swan; J. S. Thomas

    2011-05-24

    The (d,p) neutron transfer and (d,d) elastic scattering reactions were measured in inverse kinematics using a radioactive ion beam of 132Sn at 630 MeV. The elastic scattering data were taken in a region where Rutherford scattering dominated the reaction, and nuclear effects account for less than 8% of the cross section. The magnitude of the nuclear effects was found to be independent of the optical potential used, allowing the transfer data to be normalized in a reliable manner. The neutron-transfer reaction populated a previously unmeasured state at 1363 keV, which is most likely the single-particle 3p1/2 state expected above the N=82 shell closure. The data were analyzed using finite range adiabatic wave calculations and the results compared with the previous analysis using the distorted wave Born approximation. Angular distributions for the ground and first excited states are consistent with the previous tentative spin and parity assignments. Spectroscopic factors extracted from the differential cross sections are similar to those found for the one neutron states beyond the benchmark doubly-magic nucleus 208Pb.

  18. SN1987A and the properties of neutrino burst

    E-Print Network [OSTI]

    Maria Laura Costantini; Aldo Ianni; Francesco Vissani

    2004-04-20

    We reanalyze the neutrino events from SN1987A in IMB and Kamiokande-II (KII) detectors, and compare them with the expectations from simple theoretical models of the neutrino emission. In both detectors the angular distributions are peaked in the forward direction, and the average cosines are 2 sigma above the expected values. Furthermore, the average energy in KII is low if compared with the expectations; but, as we show, the assumption that a few (probably one) events at KII have been caused by elastic scattering is not in contrast with the 'standard' picture of the collapse and yields a more satisfactory distributions in angle and (marginally) in energy. The observations give useful information on the astrophysical parameters of the collapse: in our evaluations, the mean energy of electron antineutrinos is =12-16 MeV, the total energy radiated around (2-3)*1.E53 erg, and there is a hint for a relatively large radiation of non-electronic neutrino species. These properties of the neutrino burst are not in disagreement with those suggested by the current theoretical paradigm, but the data leave wide space to non-standard pictures, especially when neutrino oscillations are included.

  19. Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon

    SciTech Connect (OSTI)

    Prestat, E., E-mail: eric.prestat@gmail.com; Porret, C.; Favre-Nicolin, V.; Tainoff, D.; Boukhari, M.; Bayle-Guillemaud, P.; Jamet, M.; Barski, A., E-mail: andre.barski@cea.com [INAC, SP2M, CEA and Université Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France)

    2014-03-10

    In this Letter, we investigate manganese diffusion and the formation of Mn precipitates in highly strained, few monolayer thick, Mn-doped Ge wetting layers and nanometric size Ge quantum dot heterostructures embedded in silicon. We show that in this Ge(Mn)/Si system manganese always precipitates and that the size and the position of Mn clusters (precipitates) depend on the growth temperature. At high growth temperature, manganese strongly diffuses from germanium to silicon, whereas decreasing the growth temperature reduces the manganese diffusion. In the germanium quantum dots layers, Mn precipitates are detected, not only in partially relaxed quantum dots but also in fully strained germanium wetting layers between the dots.

  20. Direct band gap narrowing in highly doped Ge

    E-Print Network [OSTI]

    Han, Zhaohong

    Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear relationship between the direct band gap emission and carrier concentration ...

  1. Growth strategies to control tapering in Ge nanowires

    SciTech Connect (OSTI)

    Periwal, P.; Baron, T., E-mail: thierry.baron@cea.fr; Salem, B.; Bassani, F. [Laboratoire des Technologies de la Microelectronique (LTM), UMR 5129 CNRS-UJF, CEA Grenoble, 17 Rue des Martyrs, 38054 Grenoble (France); Gentile, P. [SiNaPs Laboratory SP2M, UMR-E, CEA/UJF-Grenoble 1, INAC, 38054 Grenoble (France)

    2014-04-01

    We report the effect of PH{sub 3} on the morphology of Au catalyzed Ge nanowires (NWs). Ge NWs were grown on Si (111) substrate at 400?°C in the presence of PH{sub 3}, using vapor-liquid-solid method by chemical vapor deposition. We show that high PH{sub 3}/GeH{sub 4} ratio causes passivation at NW surface. At high PH{sub 3} concentration phosphorous atoms attach itself on NW surface and form a self-protection coating that prevents conformal growth and leads to taper free nanostructures. However, in case of low PH{sub 3} flux the combination of axial and radial growth mechanism occurs resulting in conical structure. We have also investigated axial PH{sub 3}-intrinsic junctions in Ge NWs. The unusual NW shape is attributed to a combination of catalyzed, uncatalyzed and diffusion induced growth.

  2. Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

    E-Print Network [OSTI]

    Kan, Eric Win Hong

    Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) ...

  3. Discovery of Isotopes of Elements with Z $\\ge$ 100

    E-Print Network [OSTI]

    M. Thoennessen

    2012-03-09

    Currently, 163 isotopes of elements with Z $\\ge$ 100 have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented.

  4. Ge-on-Si laser operating at room temperature

    E-Print Network [OSTI]

    Liu, Jifeng

    Monolithic lasers on Si are ideal for high-volume and large-scale electronic–photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide ...

  5. GE launches 'STEM empowers OK' initiative in Oklahoma City |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, OCAST and OSSM Partner to Launch "STEM Empowers OK" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new...

  6. "Big Picture" Process Modeling Tools |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Using process modeling tools to attain cost-effective results for GE customers Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click...

  7. ORNL Partners with GE on New Hybrid | ornl.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    electric storage water heater, positioning GE to be the first company to meet the energy-saving standard. According to DOE, using devices that meet these criteria should save...

  8. Kids Invention: Vision of the Future |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Bring your Child to Work Day, to student mentoring, teaching in the class room, Invention Convention and Science Day. To take the message nationally, GE teamed up with the...

  9. The Need for Biological Computation System Models | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2012.10.09 Hello everyone, I'm Maria Zavodszky and I work in the Computational Biology and Biostatistics Lab at GE Global Research in Niskayuna, New York. This being our...

  10. Demonstration of 2nd Generation Ducted GE "Brillion" Hybrid Water

    E-Print Network [OSTI]

    sharing partners. #12;Project Synopsis Evaluate the performance and demand response (DR) of the Gen II GE/frequency response) in the PNW and nationwide (Lu et al, 2011; Diao et al 2012) The demand response characteristics

  11. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect (OSTI)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; Kalinin, Sergei V; Lai, Keji; Demkov, Alexander A.

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  12. Technology makes reds "pop" in LED displays | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reveal and Energy Smart consumer brands, and Evolve(tm), GTx(tm), Immersion(tm), Infusion(tm), Lumination(tm), Albeo(tm) and Tetra commercial brands, all trademarks of GE....

  13. Effect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO{sub 2} layers

    SciTech Connect (OSTI)

    Lopes, J.M.J.; Zawislak, F.C.; Fichtner, P.F.P.; Lovey, F.C.; Condo, A.M. [Instituto de Fisica - UFRGS, Cx. Postal 15051, 91501-970 Porto Alegre (Brazil); Departamento de Metalurgia, Escola de Engenharia - UFRGS, Porto Alegre (Brazil); Centro Atomico Bariloche, 8400 S.C. Bariloche (Argentina)

    2005-01-10

    Sn nanoclusters are synthesized in 180 nm SiO{sub 2} layers after ion implantation and heat treatment. Annealings in N{sub 2} ambient at high temperatures (T{>=}700 deg. C) lead to the formation of Sn nanoclusters of different sizes in metallic and in oxidized phases. High-resolution transmission electron microscopy (TEM) analyses revealed that the formed larger nanoparticles are composed by a Sn metallic core and a SnO{sub x} shell. The corresponding blue-violet photoluminescence (PL) presents low intensity. However, for heat treatments in vacuum, the PL intensity is increased by a factor of 5 and the TEM data show a homogeneous size distribution of Sn nanoclusters. The low intensity of PL for the N{sub 2} annealed samples is associated with Sn oxidation.

  14. Members of a workshop at the tenth IAYC Conference, July 7, 2006 1. ge -hak -te le -ber, ge -fil -te -fish: sha-bes iz a far -ge -ni -gn

    E-Print Network [OSTI]

    Finkel, Raphael

    A SUDE Members of a workshop at the tenth IAYC Conference, July 7, 2006 = 90 4 4 1. ge - hak - te le - ber, ge - fil - te - fish: sha- bes iz a far - ge - ni - gn 2. kha - le gri - vn, ku - gl yoykh: ku - men on di ma - khe - to - nem. 3. shtru - dl, tsi - mes, zi - se kalte: a su - de vos men vet ge

  15. GE & AE Extension Request Form, Version 7, Feb 2013, JC Program Change

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 7, Feb 2013, JC Program Change Pathway Today's Date to General English. How many sessions of GE do you wish to request? 1 2 3 4 (GE sessions are 5 weeks) How many GE hours do you wish to take? 21 hours 27 hours OR ____ I am a Pathway student, and I would like

  16. CTu2J.1.pdf CLEO Technical Digest OSA 2012 Light Emission in Ge Quantum Wells

    E-Print Network [OSTI]

    Miller, David A. B.

    CTu2J.1.pdf CLEO Technical Digest © OSA 2012 Light Emission in Ge Quantum Wells Edward T. Fei1 Engineering, Stanford University, Stanford, CA 94305, USA edfei@stanford.edu Abstract: We present the Ge/SiGe and electroluminescence show enhanced optical properties over bulk Ge. Further optical enhancement is observed in disk

  17. College of Engineering Partner Schools Australia Melbourne University, Melbourne GE3*

    E-Print Network [OSTI]

    Lee, Tonghun

    College of Engineering Partner Schools Australia Melbourne University, Melbourne ­ GE3* University of New South Wales, New South Wales ­ GE3* Austria Technical University of Vienna, Vienna - GE3* Chile Universidad del Bio Bio, Concepcion China Xiamen University, Xiamen ­ GE3* Denmark Aalborg University, Aalborg

  18. On the Comparison of Fisher Information of the Weibull and GE Distributions

    E-Print Network [OSTI]

    Kundu, Debasis

    On the Comparison of Fisher Information of the Weibull and GE Distributions Rameshwar D. Gupta exponen- tial (GE) and Weibull distributions for complete and Type-I censored observations. Fisher is much more than the GE distribution. We compute the total information of the Weibull and GE

  19. GE Hosts Visit by DOE to Kick Off High-Efficiency GeneratorDevelopment Program

    E-Print Network [OSTI]

    history of working with the DOE on critical energy programs. Jon Ebacher, Vice President of GE PowerGE Hosts Visit by DOE to Kick Off High-Efficiency GeneratorDevelopment Program Technology Expected of Energy (DOE) recently met with representatives of GE Power Systems and the GE Global Research Center

  20. Nearby Supernova Factory Observations of SN 2006D: On Sporadic Carbon Signatures in Early Type Ia Supernova Spectra

    E-Print Network [OSTI]

    2006-01-01

    with low volume-?lling factor. Subject headings: supernovae:general — supernovae: individual (SN 2006D)Introduction Type Ia supernovae (SNe Ia) make valuable

  1. Three-dimensional multimodal imaging and analysis of biphasic microstructure in a Ti-Ni-Sn thermoelectric material

    E-Print Network [OSTI]

    Douglas, Jason E; Echlin, McLean P; Lenthe, William C; Seshadri, Ram; Pollock, Tresa M

    2015-01-01

    microstructure in a Ti–Ni–Sn thermoelectric material Jasonsolid-state option. Thermoelectric materials, which convertin biphasic hH- based thermoelectric materials. This work

  2. Orange-green emission from porous Si coated with Ge films: The role of Ge-related defects

    E-Print Network [OSTI]

    Chen, Haydn H.

    Orange-green emission from porous Si coated with Ge films: The role of Ge-related defects X. L. Wua. A new orange-green PL band, centered at 2.25 eV, was observed with full-width at half-maximum of 0.1 e coated, the new PL band remains unchanged in peak energy but drops abruptly in intensity. Spectral

  3. Strain-induced self-assembly of Ge nanodashes, nanodumbbells, and dot chains on Si(001)

    SciTech Connect (OSTI)

    Zhang, J. J. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Schmidt, O. G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Center for Advancing Electronics Dresden, TU Dresden (Germany)

    2013-09-30

    We investigate the growth of self-assembled Ge nanostructures on top of embedded Ge nanowires on Si(001) substrates. Ge nanostructures, such as nanodashes, nanodumbbells, and dot chains are observed simply by tuning the growth temperature and thickness of the Si spacer between the Ge layers. The self-assembly process is governed by the surface strain fields generated by the embedded Ge nanowires and is well-described by our theoretical calculations. The catalyst-free and horizontal growth of such Ge nanostructures directly on Si(001) is attractive for investigating exotic transport properties through Si/Ge-based quantum devices.

  4. Antiferromagnetism and domain effects in UPdSn

    SciTech Connect (OSTI)

    Nakotte, H. [Manual Lujan Jr. Neutron Scattering Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [Manual Lujan Jr. Neutron Scattering Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); [Department of Physics, New Mexico State University, Las Cruces, New Mexico 88003 (United States); Robinson, R.A.; Purwanto, A. [Manuel Lujan Jr. Neutron Scattering Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [Manuel Lujan Jr. Neutron Scattering Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Tun, Z. [Chalk River Laboratories, Atomic Energy of Canada Limited, Chalk River, Ontario, K0J 1J0 (CANADA)] [Chalk River Laboratories, Atomic Energy of Canada Limited, Chalk River, Ontario, K0J 1J0 (CANADA); Prokes, K.; Brueck, E.; de Boer, F.R. [Van der Waals-Zeeman Institute, University of Amsterdam, 1018 XE Amsterdam (The Netherlands)] [Van der Waals-Zeeman Institute, University of Amsterdam, 1018 XE Amsterdam (The Netherlands)

    1998-10-01

    Neutron-diffraction experiments have been performed on a single crystal of the hexagonal noncollinear antiferromagnetic compound UPdSn as a function of temperature and magnetic field. The use of a special horizontal-field magnet (with very wide horizontal access to the neutron beams) has allowed the study of the principal magnetic Bragg reflections in all three antiferromagnetic domain pairs throughout the magnetic phase diagram for B{lt}3thinspT and T{gt}6thinspK. The data confirm a picture in which one domain pair (1) grows at the expense of the other two domain pairs (2 and 3), for fields along the [100] axis for domain 1. On the other hand, if the field is applied along the perpendicular axis, [010] for domain 1, the other two domains are preferred. These results are consistent with the picture given in a previous vertical-field study of only one magnetic reflection from one domain, in which the 3-T field-induced transition is viewed as a spin-flop transition. There is, however, a small amount of irreversible moment rotation (from {theta}=43{degree} to 48{degree}, where {theta} is the moment canting angle within the hexagonal basal plane), on passing through the spin-flop transition. This seems to be connected with whether the sample is single or multidomain. In addition, the field independence of the N{acute e}el temperature (T{sub N}=37thinspK) has been measured up to 3 T, and data on the domain kinetics are presented. {copyright} {ital 1998} {ital The American Physical Society}

  5. Anisotropic flow in Cu plus Au collisions at root s(N N)=200GeV RID A-2398-2009 

    E-Print Network [OSTI]

    Chen, LW; Ko, Che Ming.

    2006-01-01

    midrapidity in asymmetric collisions are found to have a stronger directed flow v(1) and their elliptic flow v(2) is also more sensitive to the parton scattering cross section. Although higher order flows v(3) and v(4) are small at all rapidities, both v(1...

  6. Suppressing the bipolar contribution to the thermoelectric properties of Mg2Si0.4Sn0.6 by Ge substitution

    E-Print Network [OSTI]

    Henkelman, Graeme

    interest because of potential applications in waste heat recovery and refrigeration. The heat to electric-type TE materials for waste heat recovery because of their high thermoelectric performance as well

  7. TYCHO SN 1572: A NAKED Ia SUPERNOVA REMNANT WITHOUT AN ASSOCIATED AMBIENT MOLECULAR CLOUD

    SciTech Connect (OSTI)

    Tian, W. W.; Leahy, D. A.

    2011-03-10

    The historical supernova remnant (SNR) Tycho SN 1572 originates from the explosion of a normal Type Ia supernova that is believed to have originated from a carbon-oxygen white dwarf in a binary system. We analyze the 21 cm continuum, H I, and {sup 12}CO-line data from the Canadian Galactic Plane Survey in the direction of SN 1572 and the surrounding region. We construct H I absorption spectra to SN 1572 and three nearby compact sources. We conclude that SN 1572 has no molecular cloud interaction, which argues against previous claims that a molecular cloud is interacting with the SNR. This new result does not support a recent claim that dust, newly detected by AKARI, originates from such an SNR-cloud interaction. We suggest that the SNR has a kinematic distance of 2.5-3.0 kpc based on a nonlinear rotational curve model. Very high energy {gamma}-ray emission from the remnant has been detected by the VERITAS telescope, so our result shows that its origin should not be an SNR-cloud interaction. Both radio and X-ray observations support that SN 1572 is an isolated Type Ia SNR.

  8. Superparamagnetic behavior of Fe-doped SnO{sub 2} nanoparticles

    SciTech Connect (OSTI)

    Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y.

    2014-02-20

    SnO{sub 2} is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO{sub 2} nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO{sub 2} nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO{sub 2}, were investigated. The particle size (1.8–16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO{sub 2} single-phase structure for samples annealed at 1073–1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO{sub 2} is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system.

  9. Photo-enhanced field emission characteristics of SnS{sub 2} nanosheets

    SciTech Connect (OSTI)

    Suryawanshi, Sachin R.; More, Mahendra A.; Warule, Sambhaji S.; Chaudhari, Nilima S.; Ogale, Satishchandra B.

    2014-04-24

    In the present studies, we demonstrate a facile hydrothermal route to synthesize elegant SnS{sub 2} nanosheets. The x-ray diffraction pattern clearly revealed formation of SnS{sub 2} phase under the hydrothermal conditions. SEM and TEM analysis indicated formation of very thin SnS{sub 2} nanosheets. Field electron emission studies of the SnS{sub 2} nanosheets emitter were preformed at base pressure of 1×10{sup ?8} mbar. The value of turn-on field, corresponding to an emission current density of ?1 ?A/ cm2, was found to be ? 4.6 V/?m. Interestingly, when the cathode was illuminated with visible light, it exhibited lower turn-on field of ? 4.2 V/?m, along with nearly 2.5 times enhancement in the emission current. Furthermore, the photo-enhanced emission characteristic shows a reproducible switching behavior. The photo-enhanced filed emission characteristics along with reproducible switching behaviour propose the SnS{sub 2} nanosheets emitter as a promising candidate for nano-optoelectronic devices.

  10. Superconducting and magnetic properties of Sr3Ir4Sn13

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Biswas, P. K.; Amato, A.; Khasanov, R.; Luetkens, H.; Wang, Kefeng; Petrovic, C.; Cook, R. M.; Lees, M. R.; Morenzoni, E.

    2014-10-10

    In this research, magnetization and muon spin relaxation or rotation (µSR) measurements have been performed to study the superconducting and magnetic properties of Sr?Ir?Sn??. From magnetization measurements the lower and upper critical fields of Sr?Ir?Sn?? are found to be 81(1) Oe and 14.4(2) kOe, respectively. Zero-field µSR data show no sign of any magnetic ordering or weak magnetism in Sr?Ir?Sn??. Transverse-field µSR measurements in the vortex state provided the temperature dependence of the magnetic penetration depth ?. The dependence of ??² with temperature is consistent with the existence of single s-wave energy gap in the superconducting state of Sr?Ir?Sn?? withmore »a gap value of 0.82(2) meV at absolute zero temperature. The magnetic penetration depth at zero temperature ?(0) is 291(3) nm. The ratio ?(0)/kBTc = 2.1(1) indicates that Sr?Ir?Sn?? should be considered as a strong-coupling superconductor.« less

  11. Spectroscopic Observations and Analysis of the Unusual Type Ia SN1999ac

    SciTech Connect (OSTI)

    Garavini, G.; Aldering, G.; Amadon, A.; Amanullah, R.; Astier,P.; Balland, C.; Blanc, G.; Conley, A.; Dahlen, T.; Deustua, S.E.; Ellis,R.; Fabbro, S.; Fadeyev, V.; Fan, X.; Folatelli, G.; Frye, B.; Gates,E.L.; Gibbons, R.; Goldhaber, G.; Goldman, B.; Goobar, A.; Groom, D.E.; Haissinski, J.; Hardin, D.; Hook, I.; Howell, D.A.; Kent, S.; Kim, A.G.; Knop, R.A.; Kowalski, M.; Kuznetsova, N.; Lee, B.C.; Lidman, C.; Mendez,J.; Miller, G.J.; Moniez, M.; Mouchet, M.; Mourao, A.; Newberg, H.; Nobili, S.; Nugent, P.E.; Pain, R.; Perdereau, O.; Perlmutter, S.; Quimby, R.; Regnault, N.; Rich, J.; Richards, G.T.; Ruiz-Lapuente, P.; Schaefer, B.E.; Schahmaneche, K.; Smith, E.; Spadafora, A.L.; Stanishev,V.; Thomas, R.C.; Walton, N.A.; Wang, L.; Wood-Vasey, W.M.

    2005-07-12

    The authors present optical spectra of the peculiar Type Ia supernova (SN Ia) 1999ac. The data extend from -15 to +42 days with respect to B-band maximum and reveal an event that is unusual in several respects. prior to B-band maximum, the spectra resemble those of SN 1999aa, a slowly declining event, but possess stronger Si II and Ca II signatures (more characteristic of a spectroscopically normal SN). Spectra after B-band maximum appear more normal. The expansion velocities inferred from the Iron lines appear to be lower than average; whereas, the expansion velocity inferred from Calcium H and K are higher than average. The expansion velocities inferred from the Iron lines appear to be lower than average; whereas, the expansion velocity inferred from Calcium H and K are higher than average. The expansion velocities inferred from Si II are among the slowest ever observed, though SN 1999ac is not particularly dim. The analysis of the parameters v{sub 10}(Si II), R(Si II), v, and {Delta}m{sub 15} further underlines the unique characteristics of SN 1999ac. They find convincing evidence of C II {lambda}6580 in the day -15 spectrum with ejection velocity v > 16,000 km s{sup -1}, but this signature disappears by day -9. This rapid evolution at early times highlights the importance of extremely early-time spectroscopy.

  12. THE PECULIAR EXTINCTION LAW OF SN 2014J MEASURED WITH THE HUBBLE SPACE TELESCOPE

    SciTech Connect (OSTI)

    Amanullah, R.; Goobar, A.; Johansson, J.; Petrushevska, T. [Oskar Klein Centre, Physics Department, Stockholm University, SE-106 91 Stockholm (Sweden); Banerjee, D. P. K.; Venkataraman, V.; Joshi, V.; Ashok, N. M. [Physical Research Laboratory, Ahmedabad 380009 (India); Cao, Y.; Kulkarni, S. R. [Cahill Center for Astrophysics, California Institute of Technology, Pasadena, CA 91125 (United States); Kasliwal, M. M. [Observatories of the Carnegie Institution for Science, 813 Santa Barbara Street, Pasadena, CA 91101 (United States); Nugent, P. E. [Department of Astronomy, University of California Berkeley, B-20 Hearst Field, Annex # 3411, Berkeley, CA 94720-3411 (United States); Stanishev, V., E-mail: rahman@fysik.su.se [CENTRA—Centro Multidisciplinar de Astrofísica, Instituto Superior Técnico, Av. Rovisco Pais 1, 1049-001 Lisbon (Portugal)

    2014-06-20

    The wavelength dependence of the extinction of Type Ia SN 2014J in the nearby galaxy M82 has been measured using UV to near-IR photometry obtained with the Hubble Space Telescope, the Nordic Optical Telescope, and the Mount Abu Infrared Telescope. This is the first time that the reddening of an SN Ia is characterized over the full wavelength range of 0.2-2 ?m. A total-to-selective extinction, R{sub V} ? 3.1, is ruled out with high significance. The best fit at maximum using a Galactic type extinction law yields R{sub V} = 1.4 ± 0.1. The observed reddening of SN 2014J is also compatible with a power-law extinction, A {sub ?}/A{sub V} = (?/? {sub V}) {sup p} as expected from multiple scattering of light, with p = –2.1 ± 0.1. After correcting for differences in reddening, SN 2014J appears to be very similar to SN 2011fe over the 14 broadband filter light curves used in our study.

  13. Di-neutron correlation in monopole two-neutron transfer modes in Sn isotope chain

    E-Print Network [OSTI]

    Hirotaka Shimoyama; Masayuki Matsuo

    2013-08-02

    We study microscopic structures of monopole pair vibrational modes and associated two-neutron transfer amplitudes in neutron-rich Sn isotopes by means of the linear response formalism of the quasiparticle random phase approximation(QRPA). For this purpose we introduce a method to decompose the transfer amplitudes with respect to two-quasiparticle components of the QRPA eigen mode. It is found that pair-addition ibrational modes in neutron-rich $^{132-140}$Sn and the pair rotational modes in $^{142-150}$Sn are commonly characterized by coherent contributions of quasaiparticle states having high orbital angular momenta $l \\gesim 5$, which suggests transfer of a spatially correlated neutron pair. The calculation also predicts a high-lying pair vibration, the giant pair vibration, emerging near the one-neutron separation energy in $^{110-130}$Sn, and we find that they have the same di-neutron characters as that of the low-lying pair vibration in $^{132-140}$Sn.

  14. What Powers the 3000-Day Light Curve of SN 2006gy?

    E-Print Network [OSTI]

    Fox, Ori D; Ammons, S Mark; Andrews, Jennifer; Bostroem, K Azalee; Cenko, S Bradley; Clayton, Geoffrey C; Dwek, Eli; Filippenko, Alexei V; Gallagher, Joseph S; Kelly, Patrick L; Mauerhan, Jon C; Miller, Adam M; Van Dyk, Schuyler D

    2015-01-01

    SN 2006gy was the most luminous SN ever observed at the time of its discovery and the first of the newly defined class of superluminous supernovae (SLSNe). The extraordinary energetics of SN 2006gy and all SLSNe (>10^51 erg) require either atypically large explosion energies (e.g., pair-instability explosion) or the efficient conversion of kinetic into radiative energy (e.g., shock interaction). The mass-loss characteristics can therefore offer important clues regarding the progenitor system. For the case of SN 2006gy, both a scattered and thermal light echo from circumstellar material (CSM) have been reported at later epochs (day ~800), ruling out the likelihood of a pair-instability event and leading to constraints on the characteristics of the CSM. Owing to the proximity of the SN to the bright host-galaxy nucleus, continued monitoring of the light echo has not been trivial, requiring the high resolution offered by the Hubble Space Telescope (HST) or ground-based adaptive optics (AO). Here we report detect...

  15. SN 2011fu: A type IIb Supernova with a luminous double-peaked light curve

    E-Print Network [OSTI]

    Morales-Garoffolo, A; Bersten, M; Jerkstrand, A; Taubenberger, S; Benetti, S; Cappellaro, E; Kotak, R; Pastorello, A; Bufano, F; Domínguez, R M; Ergon, M; Fraser, M; Gao, X; García, E; Howell, D A; Isern, J; Smartt, S J; Tomasella, L; Valenti, S

    2015-01-01

    We present optical and near infrared observations of the type IIb supernova (SN) 2011fu from a few days to $\\sim300$ d after explosion. The SN presents a double-peaked light curve (LC) similar to that of SN 1993J, although more luminous and with a longer cooling phase after the primary peak. The spectral evolution is also similar to SN 1993J's, with hydrogen dominating the spectra to $\\sim40$ d, then helium gaining strength, and nebular emission lines appearing from $\\sim60$ d post-explosion. The velocities derived from the P-Cygni absorptions are overall similar to those of other type IIb SNe. We have found a strong similarity between the oxygen and magnesium line profiles at late times, which suggests that these lines are forming at the same location within the ejecta. The hydrodynamical modelling of the pseudo-bolometric LC and the observed photospheric velocities suggest that SN 2011fu was the explosion of an extended star ($\\rm R\\sim450$ R$_\\odot$), in which 1.3 $\\times 10^{51}$ erg of kinetic energy wer...

  16. TEM Study on the Evolution of Ge Nanocrystals in Si Oxide Matrix as a Function of Ge Concentration and the Si Reduction Process

    E-Print Network [OSTI]

    Chew, Han Guan

    Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiO?) system have been studied based on the Ge content of co-sputtered Ge-SiO? films using transmission electron microscopy (TEM) and X-ray ...

  17. Tin induced a-Si crystallization in thin films of Si-Sn alloys

    SciTech Connect (OSTI)

    Neimash, V. E-mail: oleks.goushcha@nuportsoft.com; Poroshin, V.; Goushcha, A. O. E-mail: oleks.goushcha@nuportsoft.com; Shepeliavyi, P.; Yukhymchuk, V.; Melnyk, V.; Kuzmich, A.; Makara, V.

    2013-12-07

    Effects of tin doping on crystallization of amorphous silicon were studied using Raman scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence techniques. Formation of silicon nanocrystals (2–4?nm in size) in the amorphous matrix of Si{sub 1?x}Sn{sub x}, obtained by physical vapor deposition of the components in vacuum, was observed at temperatures around 300?°C. The aggregate volume of nanocrystals in the deposited film of Si{sub 1?x}Sn{sub x} exceeded 60% of the total film volume and correlated well with the tin content. Formation of structures with ?80% partial volume of the nanocrystalline phase was also demonstrated. Tin-induced crystallization of amorphous silicon occurred only around the clusters of metallic tin, which suggested the crystallization mechanism involving an interfacial molten Si:Sn layer.

  18. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

    2015-09-01

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk.more »With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

  19. E2 transition probabilities for decays of isomers observed in neutron-rich odd Sn isotopes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Iskra, ?. W.; Broda, R.; Janssens, R. V.F.; Wrzesi?ski, J.; Chiara, C. J.; Carpenter, M. P.; Fornal, B.; Hoteling, N.; Kondev, F. G.; Królas, W.; et al

    2015-01-01

    High-spin states were investigated with gamma coincidence techniques in neutron-rich Sn isotopes produced in fission processes following ??Ca + ²??Pb, ??Ca + ²³?U, and ??Ni + ²³?U reactions. By exploiting delayed and cross-coincidence techniques, level schemes have been delineated in odd ¹¹??¹²?Sn isotopes. Particular attention was paid to the occurrence of 19/2? and 23/2? isomeric states for which the available information has now been significantly extended. Reduced transition probabilities, B(E2), extracted from the measured half-lives and the established details of the isomeric decays exhibit a striking regularity. This behavior was compared with the previously observed regularity of the B(E2) amplitudesmore »for the seniority ? = 2 and 3, 10? and 27/2? isomers in even- and odd-Sn isotopes, respectively.« less

  20. Strong fragmentation of low-energy electromagnetic excitation strength in $^{117}$Sn

    E-Print Network [OSTI]

    V. Yu. Ponomarev; J. Bryssinck; L. Govor; F. Bauwens; O. Beck; D. Belic; P. von Brentano; D. De Frenne; C. Fransen; R. -D. Herzberg; E. Jacobs; U. Kneissl; H. Maser; A. Nord; N. Pietralla; H. H. Pitz; V. Werner

    1999-06-04

    Results of nuclear resonance fluorescence experiments on $^{117}$Sn are reported. More than 50 $\\gamma$ transitions with $E_{\\gamma} < 4$ MeV were detected indicating a strong fragmentation of the electromagnetic excitation strength. For the first time microscopic calculations making use of a complete configuration space for low-lying states are performed in heavy odd-mass spherical nuclei. The theoretical predictions are in good agreement with the data. It is concluded that although the E1 transitions are the strongest ones also M1 and E2 decays contribute substantially to the observed spectra. In contrast to the neighboring even $^{116-124}$Sn, in $^{117}$Sn the $1^-$ component of the two-phonon $[2^+_1 \\otimes 3^-_1]$ quintuplet built on top of the 1/2$^+$ ground state is proved to be strongly fragmented.

  1. E2 transition probabilities for decays of isomers observed in neutron-rich odd Sn isotopes

    SciTech Connect (OSTI)

    Iskra, ?. W. [Polish Academy of Sciences, Krakow (Poland). The H. Niewodniczanski Institute of Nuclear Physics.; Broda, R. [Polish Academy of Sciences, Krakow (Poland). The H. Niewodniczanski Institute of Nuclear Physics.; Janssens, R. V.F. [Argonne National Lab. (ANL), Argonne, IL (United States); Wrzesi?ski, J. [Polish Academy of Sciences, Krakow (Poland). The H. Niewodniczanski Institute of Nuclear Physics.; Chiara, C. J. [Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Maryland, College Park, MD (United States). Dept. of Chemistry and Biochemistry.; Carpenter, M. P. [Argonne National Lab. (ANL), Argonne, IL (United States); Fornal, B. [Polish Academy of Sciences, Krakow (Poland). The H. Niewodniczanski Institute of Nuclear Physics.; Hoteling, N. [Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Maryland, College Park, MD (United States). Dept. of Chemistry and Biochemistry.; Kondev, F. G. [Argonne National Lab. (ANL), Argonne, IL (United States); Królas, W. [Polish Academy of Sciences, Krakow (Poland). The H. Niewodniczanski Institute of Nuclear Physics.; Lauritsen, T. [Argonne National Lab. (ANL), Argonne, IL (United States); Paw?at, T. [Polish Academy of Sciences, Krakow (Poland). The H. Niewodniczanski Institute of Nuclear Physics.; Seweryniak, D. [Argonne National Lab. (ANL), Argonne, IL (United States); Stefanescu, I. [Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Maryland, College Park, MD (United States). Dept. of Chemistry and Biochemistry.; Walters, W. B. [Univ. of Maryland, College Park, MD (United States). Dept. of Chemistry and Biochemistry.; Zhu, S. [Argonne National Lab. (ANL), Argonne, IL (United States)

    2015-01-01

    High-spin states were investigated with gamma coincidence techniques in neutron-rich Sn isotopes produced in fission processes following ??Ca + ²??Pb, ??Ca + ²³?U, and ??Ni + ²³?U reactions. By exploiting delayed and cross-coincidence techniques, level schemes have been delineated in odd ¹¹??¹²?Sn isotopes. Particular attention was paid to the occurrence of 19/2? and 23/2? isomeric states for which the available information has now been significantly extended. Reduced transition probabilities, B(E2), extracted from the measured half-lives and the established details of the isomeric decays exhibit a striking regularity. This behavior was compared with the previously observed regularity of the B(E2) amplitudes for the seniority ? = 2 and 3, 10? and 27/2? isomers in even- and odd-Sn isotopes, respectively.

  2. Laser wavelength effects on the charge state resolved ion energy distributions from laser-produced Sn plasma

    E-Print Network [OSTI]

    Najmabadi, Farrokh

    Laser wavelength effects on the charge state resolved ion energy distributions from laser of laser wavelength on the charge state resolved ion energy distributions from laser-produced Sn plasma freely expanding into vacuum are investigated. Planar Sn targets are irradiated at laser wavelengths

  3. Mechanical Design of HD2, a 15 T Nb3Sn Dipole Magnet with a 35 mm Bore

    E-Print Network [OSTI]

    Ferracin, P.

    2008-01-01

    T Nb 3 Sn Dipole Magnet with a 35 mm Bore P. Ferracin, S. E.a 15 T Nb 3 Sn Dipole with a 35 mm Bore”, IEEE Trans. Appl.design uses 51 strands of 0.8 mm diameter. With respect to

  4. Assembly and Test of HD2, a 36 mm bore high field Nb3Sn Dipole Magnet

    E-Print Network [OSTI]

    Ferracin, P.

    2010-01-01

    Assembly and Test of HD2, a 36 mm bore high field Nb 3 Sna 15 T Nb 3 Sn dipole with a 35 mm bore”, IEEE Trans. Appl.Nb 3 Sn dipole magnet with a 35 mm bore”, IEEE Trans. Appl.

  5. Fast Lithium Ion Conduction in Li2SnS3: Synthesis, Physicochemical Characterization, and Electronic Structure

    E-Print Network [OSTI]

    Holzwarth, Natalie

    Fast Lithium Ion Conduction in Li2SnS3: Synthesis, Physicochemical Characterization, and Electronic conduction. The high thermal stability, significant lithium ion conductivity, and environmental stability make Li2SnS3 a promising new solid-state electrolyte for lithium ion batteries. 1. INTRODUCTION

  6. Mechanical Design of HD2, a 15 T Nb3Sn Dipole Magnet with a 35 mm Bore

    E-Print Network [OSTI]

    Ferracin, P.

    2008-01-01

    T Nb 3 Sn Dipole Magnet with a 35 mm Bore P. Ferracin, S. E.a 15 T Nb 3 Sn Dipole with a 35 mm Bore”, IEEE Trans. Appl.a dipole field above 15 T, a 35 mm clear bore, and nominal

  7. The 6 GeV TMD Program at Jefferson Lab

    SciTech Connect (OSTI)

    Puckett, Andrew J.

    2015-01-01

    The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  8. Features of a priori heavy doping of the n-TiNiSn intermetallic semiconductor

    SciTech Connect (OSTI)

    Romaka, V. A.; Rogl, P.; Romaka, V. V.; Hlil, E. K.; Stadnyk, Yu. V.; Budgerak, S. M.

    2011-07-15

    The crystal structure, the distribution of electron density, and the energy, kinetic, and magnetic properties of the n-TiNiSn intermetallic semiconductor are investigated. It is shown that a priori doping of n-TiNiSn with donors originates from partial, up to 0.5 at %, redistribution of Ti and Ni atoms in crystallographic sites of Ti atoms. The correlation is established between the donor concentration, amplitude of modulation of the continuous energy bands, and degree of filling of low-scale fluctuation potential wells with charge carriers. The results obtained are discussed within the Shklovskii-Efros model of a heavily doped and compensated semiconductor.

  9. Synthesis and characterization of SnO{sub 2} thin films doped with Fe to 10%

    SciTech Connect (OSTI)

    López, E.; Marín, J.; Osorio, J.

    2014-05-15

    Appropriate conditions for SnO{sub 2} powder synthesis doped with iron to 10% by using sol-gel route are found. The powders obtained have been analyzed by means of analytic spectroscopic techniques: Raman, Mössbauer, diffuse reflectance, Fourier transform infrared, and X-ray diffraction. Sn{sub 0.9}Fe{sub 0.1}O{sub 2} thin films deposited by AC magnetron sputtering on silicon substrates are obtained and characterized. A crystal structure rutile-type was found for thin films.

  10. Relaxation of optically stimulated resistance of thin SnO{sub 2} films

    SciTech Connect (OSTI)

    Russkih, D. V., E-mail: russcience@mail.ru; Rembeza, S. I. [Voronezh State Technical University (Russian Federation)

    2009-06-15

    The results of investigation of the effect of irradiation with photons from an L5013VC violet light-emitting diode (LED) with the wavelength of 400 nm and power of 76 mW on the resistance of the sensitive layer of SnO{sub 2}-based test structures of gas sensors in air before and after the high-temperature stabilizing annealing are presented. The features in the variation of the SnO{sub 2}-layer resistance in time are established when the LED is switched on and off.

  11. Is the LMA solar-neutrino solution ruled out by SN1987A data?

    E-Print Network [OSTI]

    David B. Cline

    2000-10-17

    The development of new supernova neutrino detectors relies on the expected hard energy spectrum of the nu_mu and nu_tau emitted in the supernova. We show that SN1987A was sensitive to the large mixing angle (LMA) and "just so" solution to the solar neutrino problem. We review the previous analysis of the SN1987A data and propose a new analysis. The results of this analysis strongly disfavor the LMA solution, provided the nu_mu and nu_tau are hard as predicted

  12. Absolute timing measurements of the Ni-like Pd and Sn soft-x-ray lasers

    SciTech Connect (OSTI)

    Staub, F.; Braud, M.; Balmer, J.E.; Nilsen, J.

    2005-10-15

    The absolute time of emission of the x-ray laser output with respect to the arrival of a 100-ps pump pulse has been measured with the aid of a calibrated timing fiducial. The results show the x-ray laser to appear up to 60 ps (80 ps) before the peak of the pump pulse in the case of the Sn (Pd) x-ray laser, which is in good agreement with simulations obtained from the LASNEX and CRETIN codes. The pulse duration was found to be {approx}45 ps for both the Sn and the Pd x-ray lasers.

  13. Fusion reactions in collisions induced by Li isotopes on Sn targets

    SciTech Connect (OSTI)

    Fisichella, M.; Shotter, A. C.; Di Pietro, A.; Figuera, P.; Lattuada, M.; Marchetta, C.; Musumarra, A.; Pellegriti, M. G.; Ruiz, C.; Scuderi, V.; Strano, E.; Torresi, D.; Zadro, M.

    2012-10-20

    Fusion cross sections for the {sup 6}Li+{sup 120}Sn and {sup 7}Li+{sup 119}Sn systems have been measured. We aim to search for possible effects due to the different neutron transfer Q-values, by comparing the fusion cross sections for the two systems below the barrier. This experiment is the first step of a wider systematic aiming to study the above problems in collisions induced by stable and unstable Li isotopes on tin all forming the same compound nucleus.

  14. C incorporation in epitaxial Ge1yCy layers grown on Ge,,001...: An ab initio study D. Gall, J. D'Arcy-Gall, and J. E. Greene

    E-Print Network [OSTI]

    Gall, Daniel

    C incorporation in epitaxial Ge1ÀyCy layers grown on Ge,,001...: An ab initio study D. Gall, J. D lattice site configurations in fully coherent Ge1 yCy layers grown on Ge 001 . Calculations using strained configuration involving only one C atom per configura- tion. The bond-centered interstitial and the Ge-C split

  15. Field-induced quantum criticality in YbAgGe

    SciTech Connect (OSTI)

    Bud'ko, S.; Canfield, P.

    2008-01-01

    YbAgGe is one of the very few stoichiometric, Yb-based, heavy fermion materials that exhibit field-induced quantum criticality. We will present an overview of thermodynamic and transport measurements in YbAgGe single crystals. Moderate magnetic field (45-90 kOe, depending on orientation) suppresses long range magnetic order, giving rise to non-Fermi-liquid behavior followed at higher field by a crossover to a heavy Fermi-liquid. Given the more accessible temperature and field scales, a non-Fermi liquid region rather than point for T {yields} 0 K may be detected.

  16. Direct band gap optical emission from Ge islands grown on relaxed Si{sub 0.5}Ge{sub 0.5}/Si (100) substrate

    SciTech Connect (OSTI)

    Aluguri, R.; Manna, S.; Ray, S. K., E-mail: physkr@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

    2014-01-07

    Strained Ge islands have been grown on fully relaxed Si{sub 0.5}Ge{sub 0.5} substrate by pulsed laser ablation technique. The formation of strained Ge islands has been found for film with higher thickness following Stranski–Krastanov growth mechanism. The variation of strain with changing Ge layer thickness has been analyzed using Raman spectroscopy and high-resolution X-ray diffraction techniques. X-ray photoelectron spectra have shown the absence of any Si-Ge intermixing and oxidation of Ge films. A strong no-phonon photoluminescence emission from Ge islands has been observed, showing the superior optical characteristics of the islands grown on relaxed substrate.

  17. SnS{sub 2} nanoflakes decorated multiwalled carbon nanotubes as high performance anode materials for lithium-ion batteries

    SciTech Connect (OSTI)

    Sun, Hongyu [Beijing National Center for Electron Microscopy, The State Key Laboratory of New Ceramics and Fine Processing, Department of Material Science and Engineering, Tsinghua University, Beijing 100084 (China); Ahmad, Mashkoor, E-mail: mashkoorahmad2003@yahoo.com [Nanomaterials Research Group (NRG), Physics Division, PINSTECH, P.O. Nilore, Islamabad (Pakistan); Luo, Jun [Beijing National Center for Electron Microscopy, The State Key Laboratory of New Ceramics and Fine Processing, Department of Material Science and Engineering, Tsinghua University, Beijing 100084 (China); Shi, Yingying; Shen, Wanci [Laboratory of Advanced Materials, Department of Material Science and Engineering, Tsinghua University, Beijing 100084 (China); Zhu, Jing, E-mail: jzhu@mail.tsinghua.edu.cn [Beijing National Center for Electron Microscopy, The State Key Laboratory of New Ceramics and Fine Processing, Department of Material Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2014-01-01

    Graphical abstract: The synthesized SnS{sub 2} nanoflakes decorated multiwalled carbon nanotubes hybrid structures exhibit large reversible capacity, superior cycling performance, and good rate capability as compared to pure SnS{sub 2} nanoflakes. - Highlights: • Synthesis of SnS{sub 2} nanoflakes decorated multiwalled carbon nanotubes hybrid structures. • Simple solution-phase approach. • Morphology feature of SnS{sub 2}. • Enhanced performance as Li-ion batteries. - Abstract: SnS{sub 2} nanoflakes decorated multiwalled carbon nanotubes (MWCNTs) hybrid structures are directly synthesized via a simple solution-phase approach. The as-prepared SnS{sub 2}/MWCNTs structures are investigated as anode materials for Li-ion batteries as compared with SnS{sub 2} nanoflakes. It has been found that the composite structure exhibit excellent lithium storage performance with a large reversible capacity, superior cycling performance, and good rate capability as compared to pure SnS{sub 2} nanoflakes. The first discharge and charge capacities have been found to be 1416 and 518 mA h g{sup ?1} for SnS{sub 2}/MWCNTs composite electrodes at a current density of 100 mA g{sup ?1} between 5 mV and 1.15 V versus Li/Li{sup +}. A stable reversible capacity of ?510 mA h g{sup ?1} is obtained for 50 cycles. The improved electrochemical performance may be attributed to the flake-morphology feature of SnS{sub 2} and the addition of MWCNTs that can hinder the agglomeration of the active materials and improve the conductivity of the composite electrode simultaneously.

  18. A p ? n transition for Sn-doped Cu(In,Ga)Se{sub 2} bulk materials

    SciTech Connect (OSTI)

    Monsefi, Mehrdad; Kuo, Dong-Hau, E-mail: dhkuo@mail.ntust.edu.tw

    2013-08-15

    Cu(In,Ga)Se{sub 2} (CIGSe) pellets at different Sn contents were fabricated by reactive liquid-phase sintering at 600–700 °C with the help of sintering aids of Sb{sub 2}S{sub 3} and Te. Powder preparation was based upon the molecular formula of Cu{sub 0.9}[(In{sub 0.7?x}Sn{sub x}Ga{sub 0.3}){sub 0.9}Sb{sub 0.1}](S{sub 0.15}Te{sub 0.2}Se{sub 1.65}) or Sn-x-CIGSe. Morphology, structure, and electrical property of Sn-doped CIGSe bulks were investigated. The composition of Sn-doped CIGSe is purposely designed for studying the doping effect on the CIGSe performance. The unexpected increase in hole concentration of CIGSe due to the donor doping is rationalized. A controllable n-type semiconductor is deliberately achieved for Sn-0.15-CIGSe and important for making a p/n homojunction in CIGSe solar cells. - Graphical abstract: The controls in defect type and electrical properties of Cu(In,Ga)Se{sub 2} by doping Sn{sup 4+} on the In{sup 3+} site. Highlights: • n-type Sn-CIGSe with n{sub e} of 6.4×10{sup 16} cm{sup ?3} and ?{sub e} of 2.3 cm{sup 2}/V s was obtained. • This n-type Sn-CIGSe was obtained by material design and composition control. • The reported n-type CIGSe was obtained from the Zn/CIGSe and CdS/CIGSe bilayers. • Extrinsic donor doping was explored through the results of electrical properties. • A n/p homojunction with Sn-CIGSe and undoped one can be used for solar cell devices.

  19. Structural basis for basal activity and autoactivation of abscisic acid (ABA) signaling SnRK2 kinases

    SciTech Connect (OSTI)

    Ng, Ley-Moy; Soon, Fen-Fen; Zhou, X. Edward; West, Graham M.; Kovach, Amanda; Suino-Powell, Kelly M.; Chalmers, Michael J.; Li, Jun; Yong, Eu-Leong; Zhu, Jian-Kang; Griffin, Patrick R.; Melcher, Karsten; Xu, H. Eric (Van Andel); (Scripps); (Purdue); (NU Singapore)

    2014-10-02

    Abscisic acid (ABA) is an essential hormone that controls plant growth, development, and responses to abiotic stresses. Central for ABA signaling is the ABA-mediated autoactivation of three monomeric Snf1-related kinases (SnRK2.2, -2.3, and -2.6). In the absence of ABA, SnRK2s are kept in an inactive state by forming physical complexes with type 2C protein phosphatases (PP2Cs). Upon relief of this inhibition, SnRK2 kinases can autoactivate through unknown mechanisms. Here, we report the crystal structures of full-length Arabidopsis thaliana SnRK2.3 and SnRK2.6 at 1.9- and 2.3-{angstrom} resolution, respectively. The structures, in combination with biochemical studies, reveal a two-step mechanism of intramolecular kinase activation that resembles the intermolecular activation of cyclin-dependent kinases. First, release of inhibition by PP2C allows the SnRK2s to become partially active because of an intramolecular stabilization of the catalytic domain by a conserved helix in the kinase regulatory domain. This stabilization enables SnRK2s to gain full activity by activation loop autophosphorylation. Autophosphorylation is more efficient in SnRK2.6, which has higher stability than SnRK2.3 and has well-structured activation loop phosphate acceptor sites that are positioned next to the catalytic site. Together, these data provide a structural framework that links ABA-mediated release of PP2C inhibition to activation of SnRK2 kinases.

  20. INFLUENCE OF SUBSTRATE OFF-CUT ON THE DEFECT STRUCTURE IN RELAXED GRADED Si-Ge/Si LAYERS

    E-Print Network [OSTI]

    INFLUENCE OF SUBSTRATE OFF-CUT ON THE DEFECT STRUCTURE IN RELAXED GRADED Si-Ge/Si LAYERS SRIKANTH B and Engineering, University of California, Los Angeles, CA 90095. ABSTRACT Relaxed graded Si-Ge/Si layers can of these applications requires a different final Ge concentration in the graded Si-Ge layer. With increasing Ge content

  1. GE & AE Extension Request Form, Version 11, Feb 2013, JC Program Change General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 11, Feb 2013, JC Program Change ­ General English of GE do you wish to request? 1 2 3 4 (GE sessions are 5 weeks) How many GE hours do you wish to take ______________________________________________ Date _________________ #12;GE & AE Extension Request Form, Version 11, Feb 2013, JC Please submit

  2. Inhibitive formation of nanocavities by introduction of Si atoms in Ge nanocrystals produced by ion implantation

    SciTech Connect (OSTI)

    Cai, R. S.; Shang, L.; Liu, X. H.; Zhang, Y. J. [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Wang, Y. Q., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Ross, G. G.; Barba, D., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [INRS-Énergie, Matériaux et Télécommunications, 1650 boulevard Lionel-Boulet, Varennes Québec J3X 1S2 (Canada)

    2014-05-28

    Germanium nanocrystals (Ge-nc) were successfully synthesized by co-implantation of Si and Ge ions into a SiO{sub 2} film thermally grown on (100) Si substrate and fused silica (pure SiO{sub 2}), respectively, followed by subsequent annealing at 1150?°C for 1?h. Transmission electron microscopy (TEM) examinations show that nanocavities only exist in the fused silica sample but not in the SiO{sub 2} film on a Si substrate. From the analysis of the high-resolution TEM images and electron energy-loss spectroscopy spectra, it is revealed that the absence of nanocavities in the SiO{sub 2} film/Si substrate is attributed to the presence of Si atoms inside the formed Ge-nc. Because the energy of Si-Ge bonds (301?kJ·mol{sup ?1}) are greater than that of Ge-Ge bonds (264?kJ·mol{sup ?1}), the introduction of the Si-Ge bonds inside the Ge-nc can inhibit the diffusion of Ge from the Ge-nc during the annealing process. However, for the fused silica sample, no crystalline Si-Ge bonds are detected within the Ge-nc, where strong Ge outdiffusion effects produce a great number of nanocavities. Our results can shed light on the formation mechanism of nanocavities and provide a good way to avoid nanocavities during the process of ion implantation.

  3. Tropical cyclone energy dispersion under vertical shears Xuyang Ge,1

    E-Print Network [OSTI]

    Li, Tim

    Tropical cyclone energy dispersion under vertical shears Xuyang Ge,1 Tim Li,1,2 and Xiaqiong Zhou1] Tropical cyclone Rossby wave energy dispersion under easterly and westerly vertical shears is investigated, and X. Zhou (2007), Tropical cyclone energy dispersion under vertical shears, Geophys. Res. Lett., 34, L

  4. The JLAB 12 GeV Energy Upgrade of CEBAF

    SciTech Connect (OSTI)

    Harwood, Leigh H.

    2013-12-01

    This presentation should describe the progress of the 12GeV Upgrade of CEBAF at Jefferson Lab. The status of the upgrade should be presented as well as details on the construction, procurement, installation and commissioning of the magnet and SRF components of the upgrade.

  5. Demand Response Performance of GE Hybrid Heat Pump Water Heater

    SciTech Connect (OSTI)

    Widder, Sarah H.; Parker, Graham B.; Petersen, Joseph M.; Baechler, Michael C.

    2013-07-01

    This report describes a project to evaluate and document the DR performance of HPWH as compared to ERWH for two primary types of DR events: peak curtailments and balancing reserves. The experiments were conducted with GE second-generation “Brillion”-enabled GeoSpring hybrid water heaters in the PNNL Lab Homes, with one GE GeoSpring water heater operating in “Standard” electric resistance mode to represent the baseline and one GE GeoSpring water heater operating in “Heat Pump” mode to provide the comparison to heat pump-only demand response. It is expected that “Hybrid” DR performance, which would engage both the heat pump and electric elements, could be interpolated from these two experimental extremes. Signals were sent simultaneously to the two water heaters in the side-by-side PNNL Lab Homes under highly controlled, simulated occupancy conditions. This report presents the results of the evaluation, which documents the demand-response capability of the GE GeoSpring HPWH for peak load reduction and regulation services. The sections describe the experimental protocol and test apparatus used to collect data, present the baselining procedure, discuss the results of the simulated DR events for the HPWH and ERWH, and synthesize key conclusions based on the collected data.

  6. 7-GeV Advanced Photon Source Conceptual Design Report

    SciTech Connect (OSTI)

    Not Available

    1987-04-01

    During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

  7. Crystal structure and physical properties of the novel stannide Yb3Pd2Sn2

    E-Print Network [OSTI]

    Ryan, Dominic

    on the Yb-Pd-Sn system was published [1], motivated by the intriguing physical properties of some (pieces, 99.993 % Yb/TREM purity, Smart Elements GmbH, Vienna, Austria), palladium (foil, 99.95 mass microscopy (SEM) and electron probe micro-analysis (EPMA) based on energy dispersive X-ray spectroscopy

  8. The peculiar balmer decrement of SN 2009ip: Constraints on circumstellar geometry

    SciTech Connect (OSTI)

    Levesque, Emily M.; Stringfellow, Guy S.; Bally, John; Keeney, Brian A. [CASA, Department of Astrophysical and Planetary Sciences, University of Colorado 389-UCB, Boulder, CO 80309 (United States); Ginsburg, Adam G., E-mail: Emily.Levesque@colorado.edu [European Southern Observatory, ESO Headquarters, Karl-Schwarzschild-Strasse 2, D-95748 Garching bei München (Germany)

    2014-01-01

    We present optical and near-IR spectroscopic observations of the luminous blue variable SN 2009ip during its remarkable photometric evolution of 2012. The spectra sample three key points in the SN 2009ip light curve, corresponding to its initial brightening in August (2012-A) and its dramatic rebrightening in early October (2012-B). Based on line fluxes and velocities measured in our spectra, we find a surprisingly low I(H?)/I(H?) ratio (?1.3-1.4) in the 2012-B spectra. Such a ratio implies either a rare Case B recombination scenario where H?, but not H?, is optically thick, or an extremely high density for the circumstellar material of n{sub e} > 10{sup 13} cm{sup –3}. The H? line intensity yields a minimum radiating surface area of ?20,000 AU{sup 2} in H? at the peak of SN 2009ip's photometric evolution. Combined with the nature of this object's spectral evolution in 2012, a high circumstellar density and large radiating surface area imply the presence of a thin disk geometry around the central star (and, consequently, a possible binary companion), suggesting that the observed 2012-B rebrightening of SN 2009ip can be attributed to the illumination of the disk's inner rim by fast-moving ejecta produced by the underlying events of 2012-A.

  9. Spectroscopic and Photometric Observations of SN IIn 1995N and Energy Estimates

    E-Print Network [OSTI]

    Aretxaga, Itziar

    Spectroscopic and Photometric Observations of SN IIn 1995N and Energy Estimates A. Pastorello INAF--ray wavelengths to the radio, and allow to estimate the total energy radiated by the supernova over a decade after--collapse explosions. However, recently, some authors proposed that also thermonuclear SNe may explode within a H

  10. Study of Sn-Coated Graphite as Anode Material for Secondary Lithium-Ion Batteries

    E-Print Network [OSTI]

    Popov, Branko N.

    Study of Sn-Coated Graphite as Anode Material for Secondary Lithium-Ion Batteries Basker as an alternate anode material for Li-ion batteries using an autocatalytic deposition technique. The specific have been studied as anodes for the Li-ion battery. Carbon based anodes have many desirable properties

  11. Uniform hierarchical SnS microspheres: Solvothermal synthesis and lithium ion storage performance

    SciTech Connect (OSTI)

    Fang, Zhen Wang, Qin; Wang, Xiaoqing; Fan, Fan; Wang, Chenyan; Zhang, Xiaojun

    2013-11-15

    Graphical abstract: - Highlights: • Uniform hierarchical SnS microspheres via solvothermal reaction. • The formation process was investigated in detail. • The obtained hierarchical SnS microspheres exhibit superior capacity (1650 mAh g{sup ?1}) when used as lithium battery for the hierarchical microsphere structure. - Abstract: Hierarchical SnS microspheres have been successfully synthesized by a mild solvothermal process using poly(vinylpyrrolidone) as surfactant in this work. The morphology and composition of the microspheres were investigated by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The influence of reaction parameters, such as sulfur sources, reaction temperature and the concentration of PVP, on the final morphology of the products are investigated. On the basis of time-dependent experiments, the growth mechanism has also been proposed. The specific surface area of the 3D hierarchitectured SnS microspheres were investigated by using nitrogen adsorption and desorption isotherms. Lithium ion storage performances of the synthesized materials as anodes for Lithium-ion battery were investigated in detail and it exhibits excellent electrochemical properties.

  12. Test results of a Nb3Al/Nb3Sn subscale magnet for accelerator application

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Iio, Masami; Xu, Qingjin; Nakamoto, Tatsushi; Sasaki, Ken -ichi; Ogitsu, Toru; Yamamoto, Akira; Kimura, Nobuhiro; Tsuchiya, Kiyosumi; Sugano, Michinaka; Enomoto, Shun; et al

    2015-01-28

    The High Energy Accelerator Research Organization (KEK) has been developing a Nb3Al and Nb3Sn subscale magnet to establish the technology for a high-field accelerator magnet. The development goals are a feasibility demonstration for a Nb3Al cable and the technology acquisition of magnet fabrication with Nb3Al superconductors. KEK developed two double-pancake racetrack coils with Rutherford-type cables composed of 28 Nb3Al wires processed by rapid heating, quenching, and transformation in collaboration with the National Institute for Materials Science and the Fermi National Accelerator Laboratory. The magnet was fabricated to efficiently generate a high magnetic field in a minimum-gap common-coil configuration with twomore »Nb3Al coils sandwiched between two Nb3Sn coils produced by the Lawrence Berkeley National Laboratory. A shell-based structure and a “bladder and key” technique have been used for adjusting coil prestress during both the magnet assembly and the cool down. In the first excitation test of the magnet at 4.5 K performed in June 2014, the highest quench current of the Nb3Sn coil, i.e., 9667 A, was reached at 40 A/s corresponding to 9.0 T in the Nb3Sn coil and 8.2 T in the Nb3Al coil. The quench characteristics of the magnet were studied.« less

  13. Design of HD2: a 15 T Nb3Sn dipole with a 35 mm bore

    E-Print Network [OSTI]

    Sabbi, G.

    2009-01-01

    Nb 3 Sn Dipole with a 35 mm Bore G. Sabbi, S.E. Bartlett, S.T Copper current density kA/ mm 2 Inductance mH/m Storedminimum winding radius of 12.5 mm. There are 28 turns in the

  14. Effect of Sn and Ca doping on the corrosion of Pb anodes in lead acid batteries

    E-Print Network [OSTI]

    Popov, Branko N.

    or lead calcium binaries. The use of pure lead gives rise to a strong oxide passive layer formation oxide film is prevented in antimony based lead grids due to the solubility of different antimony sulfateEffect of Sn and Ca doping on the corrosion of Pb anodes in lead acid batteries Dragan Slavkova

  15. Richardia brasiliensis Gomes NORTH CAROLINA. Justice s.n. (NCU). ALLEGHANY: Mullen

    E-Print Network [OSTI]

    Krings, Alexander

    Richardia brasiliensis Gomes NORTH CAROLINA. Justice s.n. (NCU). ALLEGHANY: Mullen 607 (NCSC), Department of Botany North Carolina State University Raleigh, NC 27695-7612 Alexander studied in the herbaria of the University of North Carolina ­ Chapel Hill (NCU) and North Carolina State

  16. Coulomb excitation of 124,126,128Sn(Z = 50)

    SciTech Connect (OSTI)

    Allmond, James M [ORNL; Radford, David C [ORNL; Baktash, Cyrus [ORNL; Batchelder, J. C. [Oak Ridge Associated Universities (ORAU); Galindo-Uribarri, Alfredo {nmn} [ORNL; Gross, Carl J [ORNL; Hausladen, Paul [ORNL; Lagergren, Karin B [ORNL; Larochelle, Y. [University of Tennessee, Knoxville (UTK); Padilla-Rodal, Elizabeth [ORNL; Yu, Chang-Hong [ORNL

    2011-01-01

    High-precision measurements of <0_1||E2||2_1> matrix elements from the Coulomb excitation of 124,126,128Sn(Z = 50) impinging on a 12C target are presented. The <0_1||E2||2_1> matrix elements and related B(E2) values decrease monotonically as the N = 82 shell closure is approached from N = 74 to 78, despite a near constancy in the first 2+ level energy, E(2_1+). Furthermore, results are presented for the Coulomb excitation of 124,126,128Sn using an enriched 50Ti target, which, combined with the results from the 12C target, provide a measure of the <2_1||E2||2_1> matrix elements and related static quadrupole moments, Q(2_1+) (expected to be ~0 for a spherical shape). These new results indicate that the Sn isotopes have a deformation consistent with zero. The present study marks the first report on measured 2_1+ static quadrupole moments for the unstable Sn isotopes.

  17. Adsorption structure and doping effect of azidotrimethyltin on graphene , S.N. Yang b

    E-Print Network [OSTI]

    Kim, Sehun

    Adsorption structure and doping effect of azidotrimethyltin on graphene J. Choi a , S.N. Yang b , K Graphene Chemical functionalization Synchrotron Photoemission spectroscopy a b s t r a c t The adsorption demonstrate the variation of characteristic of graphene induced by the chemical functionalized molecule as we

  18. One dimensional Si/Sn -based nanowires and nanotubes for lithium-ion energy storage materials

    E-Print Network [OSTI]

    Cui, Yi

    One dimensional Si/Sn - based nanowires and nanotubes for lithium-ion energy storage materials Nam of advanced energy storage applications. In this feature article, we review recent progress on Si-based NWs to their uneven energy production. From this perspective, the interest in energy storage technology is on the rise

  19. Cu2ZnSnS4 nanocrystals and graphene quantum dots for photovoltaics Xukai Xinab

    E-Print Network [OSTI]

    Lin, Zhiqun

    Cu2ZnSnS4 nanocrystals and graphene quantum dots for photovoltaics Jun Wang,a Xukai Xinab advances in the synthesis and utilization of CZTS nanocrystals and colloidal GQDs for photovoltaics emerged to achieve low cost, high perfor- mance photovoltaics, including organic solar cells,2­6 dye

  20. Electrophoretic Study of the SnO2/Aqueous Solution Interface up to 260 degrees C.

    SciTech Connect (OSTI)

    Rodriguez-Santiago, V; Fedkin, Mark V.; Wesolowski, David J

    2009-07-01

    An electrophoresis cell developed in our laboratory was utilized to determine the zeta potential at the SnO{sub 2} (cassiterite)/aqueous solution (10{sup -3} mol kg{sup -1} NaCl) interface over the temperature range from 25 to 260 C. Experimental techniques and methods for the calculation of zeta potential at elevated temperature are described. From the obtained zeta potential data as a function of pH, the isoelectric points (IEPs) of SnO{sub 2} were obtained for the first time. From these IEP values, the standard thermodynamic functions were calculated for the protonation-deprotonation equilibrium at the SnO{sub 2} surface, using the 1-pK surface complexation model. It was found that the IEP values for SnO{sub 2} decrease with increasing temperature, and this behavior is compared to the predicted values by the multisite complexation (MUSIC) model and other semitheoretical treatments, and were found to be in excellent agreement.

  1. Mitigation of fast ions from laser-produced Sn plasma for an extreme ultraviolet lithography source

    E-Print Network [OSTI]

    Tillack, Mark

    of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0438 and the Center for Energy Research of the reduction of fast ion energy from laser-produced Sn plasma by introducing a low energy prepulse. The energy candidates. Because of the availability of optics, most of the efforts focus on in-band 2% bandwidth 13.5 nm

  2. Effect of Sn and Ca doping on the corrosion of Pb anodes in lead acid batteries

    E-Print Network [OSTI]

    Popov, Branko N.

    Effect of Sn and Ca doping on the corrosion of Pb anodes in lead acid batteries Dragan Slavkova corrosion rate as compared to pure lead anodes. In the present investigation, the dissolution of Pb reserved. Keywords: Corrosion; Pb anodes; Lead acid batteries; Doping tin; Calcium 1. Introduction

  3. SnO2 Filled Mesoporous Tin Phosphate High Capacity Negative Electrode for Lithium Secondary Battery

    E-Print Network [OSTI]

    Cho, Jaephil

    SnO2 Filled Mesoporous Tin Phosphate High Capacity Negative Electrode for Lithium Secondary Battery insulators, and optics.1-6 On the other hand, their applications to electrode materials in lithium secondary batteries have received little attention because of the very limited candidates.7,8 Recently

  4. Hard templating synthesis of mesoporous and nanowire SnO2 lithium battery anode materials

    E-Print Network [OSTI]

    Cho, Jaephil

    Hard templating synthesis of mesoporous and nanowire SnO2 lithium battery anode materials Hyesun materials for lithium batteries were prepared using KIT-6 and SBA-15 SiO2 templates as an anode material for lithium batteries due to its high capacity (>600 mAh gÀ1 ) compared with graphite

  5. Was SN1997ff at z~1.7 magnified by gravitational lensing?

    E-Print Network [OSTI]

    Geraint F. Lewis; Rodrigo A. Ibata

    2001-04-25

    The quest for the cosmological parameters has come to fruition with the identification of a number of supernovae at a redshift of $z\\sim1$. Analyses of the brightness of these standard candles reveal that the Universe is dominated by a large cosmological constant. The recent identification of the $z\\sim1.7$ SN1997ff in the northern Hubble Deep Field has provided further evidence for this cosmology. Here we examine the case for gravitational lensing of SN1997ff due to the presence of galaxies lying along our line of sight. We find that, while the alignment of SN1997ff with foreground masses was not favorable for it to be multiply imaged and strongly magnified, two galaxies did lie close enough to result in significant magnification: $\\mu\\sim1.4$ for the case where these elliptical galaxies have velocity dispersion $200 {\\rm km/s}$. Given the small difference between supernova brightnesses in different cosmologies, detailed modeling of the gravitational lensing properties of the intervening matter is therefore required before the true cosmological significance of SN1997ff can be deduced.

  6. High thermoelectric performance by resonant dopant indium in nanostructured SnTe

    E-Print Network [OSTI]

    Liao, Bolin

    From an environmental perspective, lead-free SnTe would be preferable for solid-state waste heat recovery if its thermoelectric figure-of-merit could be brought close to that of the lead-containing chalcogenides. In this ...

  7. Nb3Sn cable development for the 11 T dipole demonstation model

    SciTech Connect (OSTI)

    Barzi, E.; Lombardo, V.; Nobrega, F.; Turrioni, D.; Yamada, R.; Zlobin, A.V.; Karppinen, M.; /CERN

    2011-06-01

    Fermilab (FNAL) and CERN have started the development of 11 T 11-m long Nb{sub 3}Sn dipoles to replace a number of LHC NbTi dipoles and free space for cold collimators in the LHC DS areas. An important step in the design of these magnets is the development of the high aspect ratio Nb{sub 3}Sn cable to achieve the nominal field of 11 T at the nominal LHC operating current of 11.85 kA at 1.9 K with 20% margin. Keystoned cables with 40 and 41 strands with and without a stainless steel core were made out of hard Cu wires and Nb{sub 3}Sn RRP strand of 0.7 mm nominal diameter. The cable optimization process was aimed at achieving both mechanical stability and minimal damage to the delicate internal architecture of the Restacked-Rod-Process (RRP) Nb3Sn strands with 127 restack design to be used in the magnet short models. Each cable was characterized electrically for transport properties degradation at high field and for low field stability, and metallographically for internal damage.

  8. Low-energy electric dipole response of Sn isotopes P. Papakonstantinou

    E-Print Network [OSTI]

    Roth, Robert

    Low-energy electric dipole response of Sn isotopes P. Papakonstantinou Institut de Physique Nucl, Technische Universit¨at Darmstadt, 64283 Darmstadt, Germany (Dated: October 11, 2013) We study the low-energy) and the isovector (IV, or E1) electric channels, in order to provide testable predictions and guidance for new

  9. Galactic Twins of the Nebula Around SN 1987A: Hints that LBVs may be supernova progenitors

    E-Print Network [OSTI]

    Nathan Smith

    2007-05-21

    I discuss outstanding questions about the formation of the ring nebula around SN1987A and some implications of similar ring nebulae around Galactic B supergiants. There are notable obstacles for the formation of SN1987A's bipolar nebula through interacting winds in a transition from a red supergiant to a blue supergiant. Instead, several clues hint that the nebula may have been ejected in an LBV-like event. In addition to the previously known example of Sher25, there are two newly-discovered Galactic analogs of SN1987A's ringed nebula. Of these three Galactic analogs around blue supergiants, two (Sher25 and SBW1) have chemical abundances indicating that they have not been through a red supergiant phase, and the remaining ringed bipolar nebula surrounds a luminous blue variable (HD168625). Although SK-69 202's initial mass of 20 Msun is lower than those atributed to most LBVs, it is not far off, and the low-luminosity end of the LBV phenomenon is not well defined. Furthermore, HD168625's luminosity indicates an initial mass of only 25 Msun, that of SBW1 is consistent with 20 Msun, and there is a B[e] star in the SMC with an initial mass of 20 Msun that experienced an LBV outburst in the 1990s. These similarities may be giving us important clues about Sk-69 202's pre-SN evolution and the formation mechanism of its nebula.

  10. Supernova SN1987A Revisited as a Major Production Site for r-Process Elements

    E-Print Network [OSTI]

    Takuji Tsujimoto; Toshikazu Shigeyama

    2001-09-20

    The origin of nucleosynthesis products of rapid neutron capture reactions (the r-process) is a longstanding astrophysical problem. Recent analyses of elemental abundances for extremely metal-poor stars shed light on the elemental abundances of individual supernovae. Comparison of the abundance distributions of some extremely metal-poor stars with those of the best-observed supernova SN 1987A clearly indicates that the overabundances of barium and strontium found in SN 1987A that have been ascribed to the slow neutron capture process must be results of r-process nucleosynthesis. The mass of freshly synthesized barium in SN 1987A is estimated to be 6x10^-6 solar mass based on the observed surface abundance and detailed hydrodynamical models for this supernova. These new findings lead to the conclusion that 20 solar mass stars, one of which is the progenitor star of SN 1987A, are the predominant production sites for r-process elements in the Galaxy and the r-process element donors for notable neutron-capture-rich giant stars, CS22892-052 and CS31082-001.

  11. Microstructure and Interdiffusion of Template-Synthesized Au/Sn/Au

    E-Print Network [OSTI]

    and Sn in porous polycarbonate membranes were investigated by X-ray diffraction, HRTEM, STEM, EDS at low temperatures.12-14 Experimental studies have shown that patterned normal metal conducting leads) into commercially available polycarbonate membranes (Structure Probe Inc.). The quoted pore diameters and thickness

  12. Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy

    SciTech Connect (OSTI)

    Guo, Yijun [Ames Laboratory; Rowland, Clare E [Argonne National Laboratory; Schaller, Richard D [Argonne National Laboratory; Vela, Javier [Ames Laboratory

    2014-08-26

    Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent II–VI, III–V and IV–VI semiconductor quantum dots. Here, we use relatively unexplored IV/II–VI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch compared with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial II–VI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/II–VI nanocrystals are reproducibly 1–3 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/II–VI nanocrystals. We expect this synthetic IV/II–VI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.

  13. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.

    SciTech Connect (OSTI)

    Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

    2012-03-01

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

  14. Large inherent optical gain from the direct gap transition of Ge thin films

    E-Print Network [OSTI]

    Wang, Xiaoxin

    The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (?) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ...

  15. GeV electron beams from cm-scale channel guided laser wakefield accelerator

    E-Print Network [OSTI]

    2008-01-01

    GeV electron beams from cm-scale channel guided laser wake?the generation of GeV-class electron beams using an intenseranges and high-quality electron beams with energy up to 1

  16. GeV electron beams from a centimeter-scale laser-driven plasma accelerator

    E-Print Network [OSTI]

    2008-01-01

    GeV electron beams from cm-scale channel guided laser wake?the generation of GeV-class electron beams using an intenseranges and high-quality electron beams with energy up to 1

  17. Beam On Target! - CEBAF Accelerator Achieves 12 GeV Commissioning...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in an experimental hall, recording the first data of the 12 GeV era. The machine sent electrons around the racetrack three times (known as "3-pass" beam), resulting in 6.11 GeV...

  18. A new physics era at 12 GeV | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A new physics era at 12 GeV January 29, 2015 In several articles over the past years, we have written of progress with the CEBAF 12 GeV Upgrade Project. Since the beginning of...

  19. Commercialization potential of compositionally graded Ge - Si??x?Gex? - Si substrates for solar applications

    E-Print Network [OSTI]

    Goh, Johnathan Jian Ming

    2006-01-01

    This project considers the potential of Ge - Si??x?Gex? - Si substrates for solar applications. The use of compositionally graded substrates to achieve heterointegration across different materials platforms such as Si, Ge ...

  20. Discovery of GeV Emission tfrom the Circinus Galaxy with the...

    Office of Scientific and Technical Information (OSTI)

    Discovery of GeV Emission tfrom the Circinus Galaxy with the Fermi-Lat Citation Details In-Document Search Title: Discovery of GeV Emission tfrom the Circinus Galaxy with the...

  1. High Power Millimeter-Wave Signal Generation in Advanced SiGe and CMOS Process

    E-Print Network [OSTI]

    Lin, Hsin-Chang

    2015-01-01

    1.3 Millimeter-Wave Signal Generation 1.4 ThesisPower Millimeter-Wave Signal Generation in Advanced SiGe andPower Millimeter-Wave Signal Generation in Advanced SiGe and

  2. EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source at DOE's Argonne...

  3. Epitaxial Ge/Il-V Heterostructures : MOCVD growth, characterization, and applications

    E-Print Network [OSTI]

    Bai, Yu, Ph.D. Massachusetts Institute of Technology

    2011-01-01

    Epitaxial Ge thin films are being investigated for many important roles in next generation microelectronics. Metal-oxide-semiconductor field effect transistors (MOSFETs) utilizing Ge channels have demonstrated dramatic ...

  4. Optical Observations of Gamma-Ray Bursts: Connections to GeV...

    Office of Scientific and Technical Information (OSTI)

    Optical Observations of Gamma-Ray Bursts: Connections to GeVTeV Jets Citation Details In-Document Search Title: Optical Observations of Gamma-Ray Bursts: Connections to GeVTeV...

  5. GE to Invest in Penn State Center to Study Natural Gas Supply...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    window) GE to Invest in Penn State Center to Study Natural Gas Supply Chains University Park, Pa. - GE announced it will invest up to 10 million in Penn State to establish a new...

  6. LIFETIME AND RADIATIVE EFFICIENCY VS DENSITY IN THE STRAIN-CONFINED ELECTRON-HOLE LIQUID IN Ge

    E-Print Network [OSTI]

    Kelso, Susan M.

    2011-01-01

    electron-hole liquid (SCEHL) in Ge. Sample CR50 was T = 1.9CONFINED ELECTRON-HOLE LIQUID IN Ge Susan M. Kelso and JohnCONFINED ELECTRON-HOLE LIQUID IN Ge Susan M. Kelso and John

  7. Ris-M-2737 ' / > ^ ' ' . / , / -THE PHASES OF Pb/Ge(lll)

    E-Print Network [OSTI]

    #12;Risø-M-2737 ' / > ^ ' ' . / , / - THE PHASES OF Pb/Ge(lll): A SURFACE X-RAY DIFFRACTION STUDY of a chemisorbed overlayer of Pb on the Ge(lll) surface. Three phases of Pb/Ge(lll) exist in the monolayer regime: the a- and B-phases with a V3xV3R30° unit cell, and a high-temperature IX1 phase. In the 1X1 phase of Pb/Ge

  8. Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

    E-Print Network [OSTI]

    Zeng, Li

    2010-01-01

    ferromagnetic Mn 5 Ge 3 for spintronic applications. Phys.dopants of interest for spintronic applications, where both

  9. Two-stage epitaxial growth of vertically-aligned SnO2 nano-rods on(001) ceria

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Solovyov, Vyacheslav F. [Brookhaven National Lab. (BNL), Upton, NY (United States); Wu, Li-jun [Brookhaven National Lab. (BNL), Upton, NY (United States); Rupich, Martin W. [American Superconductor, Devens, MA (United States); Sathyamurthy, Srivatsan [American Superconductor, Devens, MA (United States); Li, Xiaoping [American Superconductor, Devens, MA (United States); Li, Qiang [Brookhaven National Lab. (BNL), Upton, NY (United States)

    2014-12-01

    Growth of high-aspect ratio oriented tin oxide, SnO2, nano-rods is complicated by a limited choice of matching substrates. We show that a (001) cerium oxide, CeO2, surface uniquely enables epitaxial growth of tin-oxide nano-rods via a two-stage process. First, (100) oriented nano-wires coat the ceria surface by lateral growth, forming a uniaxially-textured SnO2 deposit. Second, vertical SnO2nano-rods nucleate on the deposit by homoepitaxy. We demonstrate growth of vertically oriented 1-2 ?m long nano-rods with an average diameter of ?20 nm.

  10. Two-stage epitaxial growth of vertically-aligned SnO2 nano-rods on(001) ceria

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Solovyov, Vyacheslav F.; Wu, Li-jun; Rupich, Martin W.; Sathyamurthy, Srivatsan; Li, Xiaoping; Li, Qiang

    2014-09-20

    Growth of high-aspect ratio oriented tin oxide, SnO2, nano-rods is complicated by a limited choice of matching substrates. We show that a (001) cerium oxide, CeO2, surface uniquely enables epitaxial growth of tin-oxide nano-rods via a two-stage process. First, (100) oriented nano-wires coat the ceria surface by lateral growth, forming a uniaxially-textured SnO2 deposit. Second, vertical SnO2nano-rods nucleate on the deposit by homoepitaxy. We demonstrate growth of vertically oriented 1-2 ?m long nano-rods with an average diameter of ?20 nm.

  11. 2D-GE IMAGE SEGMENTATION BASED ON LEVEL-SETS E.A. Mylona a

    E-Print Network [OSTI]

    Athens, University of

    2D-GE IMAGE SEGMENTATION BASED ON LEVEL-SETS E.A. Mylona a , M.A. Savelonas a , D. Maroulis a , M of protein spots in 2D-GE images. The proposed scheme incorporates a protein spot detection stage based both software packages in terms of segmentation performance. Index Terms--2D-GE Images, Protein Spot

  12. Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

    E-Print Network [OSTI]

    Zeng, Li

    2010-01-01

    Mn-Si (red squares) and Mn-Ge distances (blue circles) d asof the number of Si or Ge nearest neighbours N c ; (c) localthree Mn atoms with different N c in a-Mn 0.094 Ge 0.906 .

  13. Black Ge Based on Crystalline/Amorphous Core/Shell Nanoneedle Arrays

    E-Print Network [OSTI]

    Javey, Ali

    Black Ge Based on Crystalline/Amorphous Core/Shell Nanoneedle Arrays Yu-Lun Chueh,,§,|,# Zhiyong, ROC ABSTRACT Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays

  14. Defects in Ge and Si caused by 1 MeV Si+ implantation*

    E-Print Network [OSTI]

    Florida, University of

    Defects in Ge and Si caused by 1 MeV Si+ implantation* D. P. Hickeya Department of Materials defect formation and evolution in the 001 Ge and Si wafers implanted with 1 MeV Si+ and 40 keV Si dissolve at the projected range for nonamorphizing implants into Si. However, in Ge, no 311 defect

  15. Formation of Ge nanoclusters on Si(1 1 1)-7 7 surface at high temperature

    E-Print Network [OSTI]

    Gao, Hongjun

    Formation of Ge nanoclusters on Si(1 1 1)-7 · 7 surface at high temperature H.M. Guo, Y.L. Wang, H for publication 17 May 2004 Available online 5 June 2004 Abstract We report on Ge nanocluster formation on Si(1 1 of the Ge clusters are more uniform than those obtained at room temperature due to an increase

  16. Transistor-Based Ge/SOI Photodetector for Integrated Silicon Photonics

    E-Print Network [OSTI]

    Luo, Xi

    2011-01-01

    11. Y. -H. Kuo, Y. -K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I.Colace and G. Assanto, “Poly-Ge Near-infrared PhotodetectorsMasini and G. Assanto, “Ge on Si p-i-n photodiodes operating

  17. Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping

    E-Print Network [OSTI]

    Rommel, Sean

    Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping technique D. Pawlik, S. Sieg, S.K. Kurinec, S.L. Rommel, Z. Cheng, J.-S. Park, J. Hydrick and A. Lochtefeld A Ge Esaki diode is demonstrated on Si atop a coalesced epitaxial layer of Ge grown through narrow openings in SiO2

  18. Materials synthesis and investigation of itinerant ferromagnetism in the UCo?-xFex Ge system

    E-Print Network [OSTI]

    Huang, Kevin

    2009-01-01

    B. UCo 1?x Fe x Ge . . . . . . . . . . . . . 1. Polycrystalvs temperature data of UCo 1?x Fe x Ge from x = 0.0 to x =vs temperature data of UCo 1?x Fe x Ge from x = 0.20 to x =

  19. Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition. Kassem Ilmenau (Germany) Abstract. In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface

  20. Room-temperature 1.3 pm electroluminescence from strained Si, -,Ge,/Si quantum wells

    E-Print Network [OSTI]

    Room-temperature 1.3 pm electroluminescence from strained Si, -,Ge,/Si quantum wells Q. Mi, X. Xiao report the first room-temperature 1.3 ,um electroluminescence from strained Sir-,Ge,/Si quantum wells to that from the Sit-,GeX wells. A minimum band offset is required to have effective room

  1. GE & AE Extension Request Form, Version 8, Feb 2013, JC Program Extension

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 8, Feb 2013, JC Program Extension General English English (GE) Academic English (AE) 2. Which term will this extension begin? Fall Winter Spring Summer 3 of General English do you wish to request? 1 2 3 4 5 6 (GE sessions are 5 weeks) How many General English

  2. Infrared and photoluminescence spectroscopy of p-doped self-assembled Ge dots on Si

    E-Print Network [OSTI]

    Rokhinson, Leonid

    Infrared and photoluminescence spectroscopy of p-doped self-assembled Ge dots on Si L. P and photoluminescence PL spectroscopy of self-assembled Ge dots grown on Si 100 by molecular beam epitaxy. PL spectra show a transition from two- to three-dimensional growth as the Ge thickness exceeds 7 Å. The sum

  3. Why is GeV physics relevant in the age of the LHC?

    SciTech Connect (OSTI)

    Pennington, Michael R. [JLAB

    2014-02-01

    The contribution that Jefferson Lab has made, with its 6 GeV electron beam, and will make, with its 12 GeV upgrade, to our understanding of the way the fundamental interactions work, particularly strong coupling QCD, is outlined. The physics at the GeV scale is essential even in TeV collisions.

  4. Atomic and electronic structure of styrene on Ge(100) Do Hwan Kim a

    E-Print Network [OSTI]

    Kim, Sehun

    Atomic and electronic structure of styrene on Ge(100) Do Hwan Kim a , Yun Jeong Hwang b , Junga: Styrene Ge(100) Adsorption DFT calculations STM Coverage-dependent adsorption structures of styrene favorable configuration at room temperature is that the two styrene molecules are bound to two Ge dimers

  5. Type IIb supernova SN 2011dh: Spectra and photometry from the ultraviolet to the near-infrared

    SciTech Connect (OSTI)

    Marion, G. H.; Kirshner, Robert P.; Foley, Ryan J.; Berlind, Perry; Bieryla, Allyson; Calkins, Michael L.; Challis, Peter; Chornock, Ryan; Esquerdo, Gilbert A.; Falco, Emilio E.; Friedman, Andrew S. [Harvard-Smithsonian Center for Astrophysics, 60 Garden St., Cambridge, MA 02138 (United States); Vinko, Jozsef [University of Texas at Austin, 1 University Station C1400, Austin, TX 78712-0259 (United States); Bloom, Joshua S. [Department of Astronomy, University of California, Berkeley, CA 94720-3411 (United States); Chevalier, Roger A. [Astronomy Department, University of Virginia, Charlottesville, VA 22904 (United States); Culliton, Chris; Curtis, Jason L. [Department of Astronomy and Astrophysics, Pennsylvania State University, 525 Davey Laboratory, University Park, PA 16802 (United States); Everett, Mark E. [National Optical Astronomy Observatory, Tucson, AZ 85719 (United States); France, Kevin [Center for Astrophysics and Space Astronomy, University of Colorado, 389 UCB, Boulder, CO 80309 (United States); Fransson, Claes [Department of Astronomy, The Oskar Klein Centre, Stockholm University, S-106 91 Stockholm (Sweden); Garnavich, Peter, E-mail: gmarion@cfa.harvard.edu [Department of Physics, University of Notre Dame, 225 Nieuwland Science Hall, Notre Dame, IN 46556 (United States); and others

    2014-02-01

    We report spectroscopic and photometric observations of the Type IIb SN 2011dh obtained between 4 and 34 days after the estimated date of explosion (May 31.5 UT). The data cover a wide wavelength range from 2000 Å in the ultraviolet (UV) to 2.4 ?m in the near-infrared (NIR). Optical spectra provide line profiles and velocity measurements of H I, He I, Ca II, and Fe II that trace the composition and kinematics of the supernova (SN). NIR spectra show that helium is present in the atmosphere as early as 11 days after the explosion. A UV spectrum obtained with the Space Telescope Imaging Spectrograph reveals that the UV flux for SN 2011dh is low compared to other SN IIb. Modeling the spectrum with SYNOW suggests that the UV deficit is due to line blanketing from Ti II and Co II. The H I and He I velocities in SN 2011dh are separated by about 4000 km s{sup –1} at all phases. A velocity gap is consistent with models for a preexplosion structure in which a hydrogen-rich shell surrounds the progenitor. We estimate that the H shell of SN 2011dh is ?8 times less massive than the shell of SN 1993J and ?3 times more massive than the shell of SN 2008ax. Light curves (LCs) for 12 passbands are presented: UVW2, UVM2, UVW1, U, u', B, V, r', i', J, H, and K{sub s} . In the B band, SN 2011dh reached peak brightness of 13.17 mag at 20.0 ± 0.5 after the explosion. The maximum bolometric luminosity of 1.8 ± 0.2 × 10{sup 42} erg s{sup –1} occurred ?22 days after the explosion. NIR emission provides more than 30% of the total bolometric flux at the beginning of our observations, and the NIR contribution increases to nearly 50% of the total by day 34. The UV produces 16% of the total flux on day 4, 5% on day 9, and 1% on day 34. We compare the bolometric LCs of SN 2011dh, SN 2008ax, and SN 1993J. The LC are very different for the first 12 days after the explosions, but all three SN IIb display similar peak luminosities, times of peak, decline rates, and colors after maximum. This suggests that the progenitors of these SN IIb may have had similar compositions and masses, but they exploded inside hydrogen shells that have a wide range of masses. SN 2011dh was well observed, and a likely progenitor star has been identified in preexplosion images. The detailed observations presented here will help evaluate theoretical models for this SN and lead to a better understanding of SN IIb.

  6. Measurement of the neutron-capture cross section of 76Ge and 74Ge below 15 MeV and its relevance to 0??? decay searches of 76Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bhike, Megha; Fallin, B.; Tornow, W.

    2015-02-01

    The neutron radiative-capture cross section of 76Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of View the MathML source?86%Ge76 and View the MathML source?14%Ge74 used in the 0???0??? searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the View the MathML sourceH3(p,n)He3, View the MathML sourceH2(d,n)He3 and View the MathML sourceH3(d,n)He4 reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for 74Ge at neutron energies below 8 MeV. Indium andmore »gold foils were irradiated simultaneously for neutron fluence determination. High-resolution ?-ray spectroscopy was used to determine the ?-ray activity of the daughter nuclei of interest. For the 76Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the View the MathML sourceGe74(n,?)Ge75 reaction, the present data are about a factor of two larger than predicted. It was found that the View the MathML sourceGe74(n,?)Ge75 yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the View the MathML sourceGe76(n,?)Ge77 yield due to the larger cross section of the former reaction.« less

  7. Studies of Nb3Sn Strands Based on the Restacked-Rod Process for High-Field Accelerator Magnets Nb3Sn

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Barzi, E; Bossert, M; Gallo, G; Lombardo, V; Turrioni, D; Yamada, R; Zlobin, A V

    2012-06-01

    A major thrust in Fermilab's accelerator magnet R&D program is the development of Nb3Sn wires which meet target requirements for high field magnets, such as high critical current density, low effective filament size, and the capability to withstand the cabling process. The performance of a number of strands with 150/169 restack design produced by Oxford Superconducting Technology was studied for round and deformed wires. To optimize the maximum plastic strain, finite element modeling was also used as an aid in the design. Results of mechanical, transport and metallographic analyses are presented for round and deformed wires.

  8. Constraints on the progenitor system and the environs of SN 2014J from deep radio observations

    SciTech Connect (OSTI)

    Pérez-Torres, M. A.; Alberdi, A. [Instituto de Astrofísica de Andalucía, Glorieta de las Astronomía, s/n, E-18008 Granada (Spain); Lundqvist, P.; Björnsson, C. I.; Fransson, C. [Department of Astronomy, AlbaNova University Center, Stockholm University, SE-10691 Stockholm (Sweden); Beswick, R. J.; Muxlow, T. W. B.; Argo, M. K. [Jodrell Bank Centre for Astrophysics, University of Manchester, Oxford Road, Manchester M13 9PL (United Kingdom); Paragi, Z. [Joint Institute for VLBI in Europe, Postbus 2, 7990 AA Dwingeloo (Netherlands); Ryder, S. [Australian Astronomical Observatory, P.O. Box 915, North Ryde, NSW 1670 (Australia); Marcaide, J. M.; Ros, E.; Guirado, J. C. [Departamento de Astronomía i Astrofísica, Universidad de Valencia, E-46100 Burjassot, Valencia (Spain); Martí-Vidal, I. [Onsala Space Observatory, Chalmers University of Technology, SE-43992 Onsala (Sweden)

    2014-09-01

    We report deep EVN and eMERLIN observations of the Type Ia SN 2014J in the nearby galaxy M82. Our observations represent, together with JVLA observations of SNe 2011fe and 2014J, the most sensitive radio studies of Type Ia SNe ever. By combining data and a proper modeling of the radio emission, we constrain the mass-loss rate from the progenitor system of SN 2014J to M-dot ?7.0×10{sup ?10} M{sub ?} yr{sup ?1} (for a wind speed of 100 km s{sup –1}). If the medium around the supernova is uniform, then n {sub ISM} ? 1.3 cm{sup –3}, which is the most stringent limit for the (uniform) density around a Type Ia SN. Our deep upper limits favor a double-degenerate (DD) scenario—involving two WD stars—for the progenitor system of SN 2014J, as such systems have less circumstellar gas than our upper limits. By contrast, most single-degenerate (SD) scenarios, i.e., the wide family of progenitor systems where a red giant, main-sequence, or sub-giant star donates mass to an exploding WD, are ruled out by our observations. (While completing our work, we noticed that a paper by Margutti et al. was submitted to The Astrophysical Journal. From a non-detection of X-ray emission from SN 2014J, the authors obtain limits of M-dot ?1.2×10{sup ?9} M {sub ?} yr{sup –1} (for a wind speed of 100 km s{sup –1}) and n {sub ISM} ? 3.5 cm{sup –3}, for the ??r {sup –2} wind and constant density cases, respectively. As these limits are less constraining than ours, the findings by Margutti et al. do not alter our conclusions. The X-ray results are, however, important to rule out free-free and synchrotron self-absorption as a reason for the radio non-detections.) Our estimates on the limits on the gas density surrounding SN2011fe, using the flux density limits from Chomiuk et al., agree well with their results. Although we discuss the possibilities of an SD scenario passing observational tests, as well as uncertainties in the modeling of the radio emission, the evidence from SNe 2011fe and 2014J points in the direction of a DD scenario for both.

  9. GRB 131231A: IMPLICATIONS OF THE GeV EMISSION

    SciTech Connect (OSTI)

    Liu, Bin; Chen, Wei; Liang, Yun-Feng; Zhou, Bei; He, Hao-Ning; Jin, Zhi-Ping; Fan, Yi-Zhong; Wei, Da-Ming [Key laboratory of Dark Matter and Space Astronomy, Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210008 (China); Tam, Pak-Hin Thomas [Institute of Astronomy and Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Shao, Lang, E-mail: liangyf@pmo.ac.cn, E-mail: beizhou@pmo.ac.cn, E-mail: yzfan@pmo.ac.cn, E-mail: dmwei@pmo.ac.cn, E-mail: phtam@phys.nthu.edu.tw [Department of Physics, Hebei Normal University, Shijiazhuang 050024 (China)

    2014-05-20

    GRB 131231A was detected by the Large Area Telescope on board the Fermi Space Gamma-ray Telescope. The high-energy gamma-ray (>100 MeV) afterglow emission spectrum is F {sub ?}??{sup –0.54} {sup ±} {sup 0.15} in the first ?1300 s after the trigger and the most energetic photon has an energy of ?62 GeV, arriving at t ? 520 s. With reasonable parameters of the gamma-ray burst (GRB) outflow as well as the density of the circum-burst medium, the synchrotron radiation of electrons or protons accelerated at an external forward shock have difficulty accounting for the data. Rather, the synchrotron self-Compton radiation of the forward shock-accelerated electrons can account for both the spectrum and temporal behavior of the GeV afterglow emission. We also show that the prospect for detecting GRB 131231A-like GRBs with the Cherenkov Telescope Array is promising.

  10. The 12 GeV Energy Upgrade at Jefferson Laboratory

    SciTech Connect (OSTI)

    Pilat, Fulvia C.

    2012-09-01

    Two new cryomodules and an extensive upgrade of the bending magnets at Jefferson Lab has been recently completed in preparation for the full energy upgrade in about one year. Jefferson Laboratory has undertaken a major upgrade of its flagship facility, the CW re-circulating CEBAF linac, with the goal of doubling the linac energy to 12 GeV. I will discuss here the main scope and timeline of the upgrade and report on recent accomplishments and the present status. I will then discuss in more detail the core of the upgrade, the new additional C100 cryomodules, their production, tests and recent successful performance. I will then conclude by looking at the future plans of Jefferson Laboratory, from the commissioning and operations of the 12 GeV CEBAF to the design of the MEIC electron ion collider.

  11. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  12. Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization

    SciTech Connect (OSTI)

    Oya, N.; Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2014-06-30

    The highly (111)-textured Ge thin film (50-nm thickness) is demonstrated on a flexible polyimide film via the low-temperature crystallization (325?°C) of amorphous Ge using Al as a catalyst. Covering the polyimide with insulators significantly improved the crystal quality of the resulting Ge layer. In particular, SiN covering led to 97% (111)-oriented Ge with grains 200??m in size, two orders larger than the grain size of polycrystalline Ge directly formed on the polyimide film. This achievement will give a way to realize advanced electronic and optical devices simultaneously allowing for high performance, inexpensiveness, and flexibility.

  13. Microstructure and In Situ Observations of Undercooling for Nucleation of ?-Sn Relevant to Lead-Free Solder Alloys

    E-Print Network [OSTI]

    Elmer, John W.; Specht, Eliot D.; Kumar, Mukul

    2010-01-01

    K.J. Puttlitz, Handbook of Lead-Free Solder Technology forNucleation of b-Sn Relevant to Lead-Free Solder Alloys JOHNcation of tin and tin-based lead-free solder alloys can

  14. Aging Effects on the Microstructure, Surface Characteristics and Wettability of Cu Pretinned with Sn-Pb Solders

    E-Print Network [OSTI]

    Linch, H.S.

    2010-01-01

    solders. Coatings were applied using electroplating or hotcoatings are usually Sn-Pb solders and are often applied to Cu substrates using electroplatingdipped coatings. [9] Based on these ranges, electroplating

  15. A three-dimensional Macroporous Cu/SnO2 composite anode sheet prepared via a novel method

    SciTech Connect (OSTI)

    Xu, Wu; Canfield, Nathan L.; Wang, Deyu; Xiao, Jie; Nie, Zimin; Zhang, Jiguang

    2010-11-01

    Macroporous Cu/SnO2 composite anode sheets were prepared by a novel method which is based on slurry blending, tape casting, sintering, and reducing of metal oxides. Such composite Cu/SnO2 anode sheets have no conducting carbons and binders, and show improved discharge capacity and cycle life than the SnO2 electrode from conventional tape-casting method on Cu foil. This methodology produces limited wastes and is also adaptable to many other materials. It is easy for industrial scale production. With the optimization of particle size of the metal oxide, pore size, pore volume and other factors, this kind of macroporous Cu/SnO2 composite anode sheets could give significantly improved capacity and cycle life.

  16. Growth of a Au-Ni-Sn intermetallic compound on the solder-substrate interface after aging (thesis)

    E-Print Network [OSTI]

    Minor, A.M.

    2011-01-01

    of Eutectic Sn/Pb”, M.S. Thesis, U.C. Berkeley, (May 1992) IAndrew Murphy Minor M.S. Thesis Department of Materialsmy research on this thesis. Additionally, I am indebted to

  17. Influence of strontium addition on the mechanical properties of gravity cast Mg-3Al-3Sn alloy

    SciTech Connect (OSTI)

    Germen, Gül?ah ?evik, Hüseyin; Kurnaz, S. Can

    2013-12-16

    In this study, the effect of strontium (0.01, 0.1, 0.5, 1 wt%) addition on the microstructure and mechanical properties of the gravity cast Mg-3Al-3Sn alloy were investigated. X-ray diffractometry revealed that the main phases are ??Mg, ??Mg{sub 17}Al{sub 12} and Mg{sub 2}Sn in the Mg-3Al-3Sn alloy. With addition The tensile testing results showed that the yield and ultimate tensile strength and elongation of Mg-3Al-3Sn alloy increased by adding Sr up to 0.1 wt.% and then is gradually decreased with the addition of more alloying element.

  18. Behavior of the giant-dipole resonance in $^{120}$Sn and $^{208}$Pb at high excitation energ

    E-Print Network [OSTI]

    W. E. Ormand; P. F. Bortignon; R. A. Broglia; A. Bracco

    1996-07-29

    The properties of the giant-dipole resonance (GDR) are calculated as a function of excitation energy, angular momentum, and the compound nucleus particle decay width in the nuclei $^{120}$Sn and $^{208}$Pb, and are compared with recent experimental data. Differences observed in the behavior of the full-width-at-half-maximum of the GDR for $^{120}$Sn and $^{208}$Pb are attributed to the fact that shell corrections in $^{208}$Pb are stronger than in $^{120}$Sn, and favor the spherical shape at low temperatures. The effects shell corrections have on both the free energy and the moments of inertia are discussed in detail. At high temperature, the FWHM in $^{120}$Sn exhibits effects due to the evaporation width of the compound nucleus, while these effects are predicted for $^{208}$Pb.

  19. Development of TQC01, a 90 mm Nb3 Sn Model Quadrupole for LHC Upgrade Based on SS Collar

    E-Print Network [OSTI]

    Bossert, R. C.

    2009-01-01

    Development of TQC01, a 90 mm Nb 3 Sn Model Quadrupole foriron yoke laminations and 12 mm thick stainless steel skinsby ap- proximately 10 MPa per mm of key depth. During the

  20. Tuning the oxide/organic interface: Benzene on SnO2,,101... Matthias Batzill,a)

    E-Print Network [OSTI]

    Diebold, Ulrike

    Tuning the oxide/organic interface: Benzene on SnO2,,101... Matthias Batzill,a) Khabibulakh Katsiev,16 As a model molecule for simulating an organic semiconductor film benzene was chosen as a simple -conjugated

  1. Synthesis of Pt{sub 3}Sn alloy nanoparticles and their catalysis for electro-oxidation of CO and methanol.

    SciTech Connect (OSTI)

    Liu, Y.; Li, D.; Stamenkovic, V. R.; Soled, S.; Henao, J. D.; Sun, S.

    2011-11-04

    Monodisperse Pt{sub 3}Sn alloy nanoparticles (NPs) were synthesized by a controlled coreduction of Pt(II) acetylacetonate and Sn(II) acetylacetonate at 180-280 C in 1-octadecene. In the synthesis, oleylamine was used as a reducing agent, and oleylamine/oleic acid served as surfactants. The sizes of the Pt{sub 3}Sn NPs were tuned from 4 to 7 nm by controlling the metal salt injection temperatures from 180 to 240 C. These monodisperse Pt3Sn NPs were highly active for CO and methanol oxidation in 0.1 M HClO{sub 4} solutions, and their activity and stability could be further improved by a postsynthesis thermal treatment at 400 C in Ar + 5% H{sub 2} for 1 h. They are promising as a practical catalyst for CO and methanol oxidation reactions in polymer electrolyte membrane fuel cell conditions.

  2. Infrared-optical spectroscopy of transparent conducting perovskite (La,Ba)SnO{sub 3} thin films

    SciTech Connect (OSTI)

    Seo, Dongmin; Yu, Kwangnam; Jun Chang, Young; Choi, E. J.; Sohn, Egon; Hoon Kim, Kee

    2014-01-13

    We have performed optical transmission, reflection, spectroscopic ellipsometry, and Hall effect measurements on the electron-doped La{sub x}Ba{sub 1–x}SnO{sub 3} (x?=?0.04) transparent thin films. From the infrared Drude response and plasma frequency analysis we determine the effective mass of the conducting electron m*?=?0.35m{sub 0}. In the visible-UV region the optical band gap shifts to high energy in (La,Ba)SnO{sub 3} by 0.18?eV compared with undoped BaSnO{sub 3} which, in the context of the Burstein-Moss analysis, is consistent with the infrared-m*. m* of BaSnO{sub 3} is compared with other existing transparent conducting oxides (TCO), and implication on search for high-mobility TCO compounds is discussed.

  3. Early-Time Flux Measurements of SN 2014J Obtained with Small Robotic Telescopes: Extending the AAVSO Light Curve

    E-Print Network [OSTI]

    Poppe, B; Zheng, W; Shivvers, I; Itagaki, K; Filippenko, A V; Kunz, J

    2015-01-01

    In this work, early-time photometry of supernova (SN) 2014J is presented, extending the AAVSO CCD database to prediscovery dates. The applicability of NASA's small robotic MicroObservatory Network telescopes for photometric measurements is evaluated. Prediscovery and postdiscovery photometry of SN 2014J is measured from images taken by two different telescopes of the network, and is compared to measurements from the Katzman Automatic Imaging Telescope and the Itagaki Observatory. In the early light-curve phase (which exhibits stable spectral behavior with constant color indices), these data agree with reasonably high accuracy (better than 0.05 mag around maximum brightness, and 0.15 mag at earlier times). Owing to the changing spectral energy distribution of the SN and the different spectral characteristics of the systems used, differences increase after maximum light. We augment light curves of SN 2014J downloaded from the American Association of Variable Star Observers (AAVSO) online database with these dat...

  4. Synthesis and Morphological, Electrochemical Characterization of Sn92Co8 Nanoalloys for Anode Materials in Li Secondary

    E-Print Network [OSTI]

    Cho, Jaephil

    Materials in Li Secondary Batteries Hyunjung Kim and Jaephil Cho*,z Department of Applied Chemistry, Kumoh the capacity limits of graphite materials, Sn and Si anode materials have been investigated.1-3 However

  5. Dielectric properties of a polar ZnSnO{sub 3} with LiNbO{sub...

    Office of Scientific and Technical Information (OSTI)

    range of 300 K to 780 K. LiNbOsub 3-type ZnSnOsub 3 exhibits the maximum SHG efficiency of approximately 50 times that of quartz. We then compare the structure and SHG...

  6. Neutron powder diffraction study of phase transitions in Sr{sub 2}SnO{sub 4}

    SciTech Connect (OSTI)

    Fu, W.T. [Leiden Institute of Chemistry, Gorlaeus Laboratories, Leiden University, P.O. Box 9502, 2300 RA Leiden (Netherlands)]. E-mail: w.fu@chem.leidenuniv.nl; Visser, D. [NWO-Physics, ISIS Facility, Rutherford Appleton Laboratory, Chilton, Didcot, OX11 0QX (United Kingdom); Knight, K.S. [ISIS Facility, Rutherford Appleton Laboratory, Chilton, Didcot, OX11 0QX (United Kingdom); IJdo, D.J.W. [Leiden Institute of Chemistry, Gorlaeus Laboratories, Leiden University, P.O. Box 9502, 2300 RA Leiden (Netherlands)

    2004-11-01

    The phase transitions in Sr{sub 2}SnO{sub 4} at high temperature have been studied using high resolution time-of-flight powder neutron diffraction. The room temperature structure of Sr{sub 2}SnO{sub 4} is orthorhombic (Pccn), which can be derived from the tetragonal K{sub 2}NiF{sub 4} structure by tilting the SnO{sub 6} octahedra along the tetragonal [100]{sub T}- and [010]{sub T}-axes with non-equal tilts. At the temperature of about 423K, it transforms to another orthorhombic structure (Bmab) characterized by the SnO{sub 6} octahedral tilt around the [110]{sub T}-axis. At still higher temperatures ({approx}573K) the structure was found to be tetragonal K{sub 2}NiF{sub 4}-type (I4/mmm)

  7. Project W-314 sn-634 transfer line a-b to ax-b acceptance for beneficial use

    SciTech Connect (OSTI)

    Warnick, T. L.

    1997-09-29

    Program/Project Title: Project W-314, Tank Farm Restoration and Safe Operation, Phase I Component/System: SN-630 Transfer Line (AZ-02A to AN-B) September 15, 1997.

  8. Gamma-Ray Bursts Above 1 GeV

    E-Print Network [OSTI]

    Matthew G. Baring

    1997-11-21

    One of the principal results obtained by the Compton Gamma Ray Observatory relating to the study of gamma-ray bursts was the detection by the EGRET instrument of energetic ($>$100 MeV) photons from a handful of bright bursts. The most extreme of these was the single 18 GeV photon from the GRB940217 source. Given EGRET's sensitivity and limited field of view, the detection rate implies that such high energy emission may be ubiquitous in bursts. Hence expectations that bursts emit out to at least TeV energies are quite realistic, and the associated target-of-opportunity activity of the TeV gamma-ray community is well-founded. This review summarizes the observations and a handful of theoretical models for generating GeV--TeV emission in bursts sources, outlining possible ways that future positive detections could discriminate between different scenarios. The power of observations in the GeV--TeV range to distinguish between spectral structure intrinsic to bursts and that due to the intervening medium between source and observer is also discussed.

  9. Quantum confinement in Si and Ge nanostructures: Theory and experiment

    SciTech Connect (OSTI)

    Barbagiovanni, Eric G.; Lockwood, David J.; Simpson, Peter J.; Goncharova, Lyudmila V.

    2014-03-15

    The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO{sub 2}, and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si{sub 3}N{sub 4} and Al{sub 2}O{sub 3}. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters.

  10. GeV emission from Gamma-Ray Burst afterglows

    E-Print Network [OSTI]

    A. Panaitescu

    2008-01-10

    We calculate the GeV afterglow emission expected from a few mechanisms related to GRBs and their afterglows. Given the brightness of the early X-ray afterglow emission measured by Swift/XRT, GLAST/LAT should detect the self-Compton emission from the forward-shock driven by the GRB ejecta into the circumburst medium. Novel features discovered by Swift in X-ray afterglows (plateaus and chromatic light-curve breaks) indicate the existence of a pair-enriched, relativistic outflow located behind the forward shock. Bulk and inverse-Compton upscattering of the prompt GRB emission by such outflows provide another source of GeV afterglow emission detectable by LAT. The large-angle burst emission and synchrotron forward-shock emission are, most likely, too dim at high photon energy to be observed by LAT. The spectral slope of the high-energy afterglow emission and its decay rate (if it can be measured) allow the identification of the mechanism producing the GeV transient emission following GRBs.

  11. Exclusive processes at JLab at 6 GeV

    SciTech Connect (OSTI)

    Kim, Andrey

    2015-01-01

    Deeply virtual exclusive reactions provide a unique opportunity to probe the complex internal structure of the nucleon. They allow to access information about the correlations between parton transverse spatial and longitudinal momentum distributions from experimental observables. Dedicated experiments to study Deeply Virtual Compton Scattering (DVCS) and Deeply Virtual Meson Production (DVMP) have been carried out at Jefferson Lab using continuous electron beam with energies up to 6 GeV. Unpolarized cross sections, beam, target and double spin asymmetries have been measured for DVCS as well as for ?0 exclusive electroproduction. The data from Hall B provide a wide kinematic coverage with Q2=1-4.5 GeV2, xB=0.1-0.5, and ?t up to 2 GeV2. Hall A data have limited kinematic range partially overlapping with Hall B kinematics but provide a high accuracy measurements. Scaling tests of the DVCS cross sections provide solid evidence of twist-2 dominance, which makes chiral-even GPDs accessible even at modest Q2. We will discuss the interpretation of these data in terms of Generalized Parton Distributions (GPDs) model. Successful description of the recent CLAS ?0 exclusive production data within the framework of the GPD-based model provides a unique opportunity to access the chiral-odd GPDs.

  12. Thermal behavior of the amorphous precursors of the ZrO{sub 2}-SnO{sub 2} system

    SciTech Connect (OSTI)

    Stefanic, Goran Music, Svetozar; Ivanda, Mile

    2008-11-03

    Thermal behavior of the amorphous precursors of the ZrO{sub 2}-SnO{sub 2} system on the ZrO{sub 2}-rich side of the concentration range, prepared by co-precipitation from aqueous solutions of the corresponding salts, was monitored using differential thermal analysis, X-ray powder diffraction, Raman spectroscopy, field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectrometry (EDS). The crystallization temperature of the amorphous precursors increased with an increase in the SnO{sub 2} content, from 405 deg. C (0 mol% SnO{sub 2}) to 500 deg. C (40 mol% SnO{sub 2}). Maximum solubility of Sn{sup 4+} ions in the ZrO{sub 2} lattice ({approx}25 mol%) occurred in the metastable products obtained upon crystallization of the amorphous precursors. A precise determination of unit-cell parameters, using both Rietveld and Le Bail refinements of the powder diffraction patterns, shows that the incorporation of Sn{sup 4+} ions causes an asymmetric distortion of the monoclinic ZrO{sub 2} lattice. The results of phase analysis indicate that the incorporation of Sn{sup 4+} ions has no influence on the stabilization of cubic ZrO{sub 2} and negligible influence on the stabilization of tetragonal ZrO{sub 2}. Partial stabilization of tetragonal ZrO{sub 2} in products having a tin content above its solid-solubility limit was attributed to the influence of ZrO{sub 2}-SnO{sub 2} surface interactions. In addition to phases closely structurally related to cassiterite, monoclinic ZrO{sub 2} and tetragonal ZrO{sub 2}, a small amount of metastable ZrSnO{sub 4} phase appeared in the crystallization products of samples with 40 and 50 mol% of SnO{sub 2} calcined at 1000 deg. C. Further temperature treatments caused a decrease in and disappearance of metastable phases. The results of the micro-structural analysis show that the sinterability of the crystallization products significantly decreases with an increase in the SnO{sub 2} content.

  13. Isospin transport in 84Kr + 112,124Sn collisions at Fermi energies

    E-Print Network [OSTI]

    S. Barlini; S. Piantelli; G. Casini; P. R. Maurenzig; A. Olmi; M. Bini; S. Carboni; G. Pasquali; G. Poggi; A. A. Stefanini; R. Bougault; E. Bonnet; B. Borderie; A. Chbihi; J. D. Frankland; D. Gruyer; O. Lopez; N. Le Neindre; M. Parlog; M. F. Rivet; E. Vient; E. Rosato; G. Spadaccini; M. Vigilante; M. Bruno; T. Marchi; L. Morelli; M. Cinausero; M. Degerlier; F. Gramegna; T. Kozik; T. Twarog; R. Alba; C. Maiolino; D. Santonocito

    2013-01-18

    Isotopically resolved fragments with Z<=20 have been studied with high resolution telescopes in a test run for the FAZIA collaboration. The fragments were produced by the collision of a 84Kr beam at 35 MeV/nucleon with a n-rich (124Sn) and a n-poor (112Sn) target. The fragments, detected close to the grazing angle, are mainly emitted from the phase-space region of the projectile. The fragment isotopic content clearly depends on the n-richness of the target and it is a direct evidence of isospin diffusion between projectile and target. The observed enhanced neutron richness of light fragments emitted from the phase-space region close to the center of mass of the system can be interpreted as an effect of isospin drift in the diluted neck region.

  14. The disappearance of the progenitor of SN 2012aw in late-time imaging

    E-Print Network [OSTI]

    Fraser, M

    2015-01-01

    We present new late-time near-infrared imaging of the site of the nearby core-collapse supernova SN 2012aw, confirming the disappearance of the point source identified by Fraser et al. (2012) and Van Dyk et al. (2012) as a candidate progenitor in both J and Ks filters. We re-measure the progenitor photometry, and find that both the J and Ks magnitudes of the source are consistent with those quoted in the literature. We also recover a marginal detection of the progenitor in H-band, for which we measure H=19.67+/-0.40 mag. SN 2012aw appears to have resulted from the explosion of a 12.5+/-1.5 Msun red supergiant.

  15. Phonon anomalies and superconductivity in the Heusler compound YPd?Sn

    SciTech Connect (OSTI)

    Tütüncü, H. M. [Sakarya Üniversitesi, Fen-Edebiyat Fakültesi, Fizik Bölümü, 54187, Adapazar? (Turkey); Srivastava, G. P. [School of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL (United Kingdom)

    2014-07-07

    We have studied the structural and electronic properties of YPd?Sn in the Heusler structure using a generalized gradient approximation of the density functional theory and the ab initio pseudopotential method. The electronic results indicate that the density of states at the Fermi level is primarily derived from Pd d states, which hybridize with Y d and Sn p states. Using our structural and electronic results, phonons and electron-phonon interactions have been studied by employing a linear response approach based on the density functional theory. Phonon anomalies have been observed for transverse acoustic branches along the [110] direction. This anomalous dispersion is merely a consequence of the strong coupling. By integrating the Eliashberg spectral function, the average electron-phonon coupling parameter is found to be ?=0.99. Using this value, the superconducting critical temperature is calculated to be 4.12 K, in good accordance with the recent experimental value of 4.7 K.

  16. Synthesis, characterization, and gas-sensing properties of monodispersed SnO{sub 2} nanocubes

    SciTech Connect (OSTI)

    Runa, A; Bala, Hari E-mail: fuwy56@163.com; Wang, Yan; Chen, Jingkuo; Zhang, Bowen; Li, Huayang; Fu, Wuyou E-mail: fuwy56@163.com; Wang, Xiaodong; Sun, Guang; Cao, Jianliang; Zhang, Zhanying

    2014-08-04

    Monodispersed single-crystalline SnO{sub 2} nanocubes with exposed a large percentage of high-energy surfaces have been synthesized by a simple solvothermal process at low temperature without any templates and catalysts. The as-prepared samples have been characterized by X-ray diffraction and transmission electron microscopy. Many outstanding characters of the final products have been shown, such as uniform particle size, high purity, and monodispersity. In property, superior gas-sensing properties such as high response, rapid response-recovery time, and good selectivity have also been shown to ethanol at an optimal working temperature of as low as 280?°C. It indicates that the as-prepared SnO{sub 2} nanocubes are promising for gas sensors.

  17. Two-solvent method synthesis of SnO{sub 2} nanoparticles embedded in SBA-15: Gas-sensing and photocatalytic properties study

    SciTech Connect (OSTI)

    Dai, Peng; Zhang, Lili; Li, Guang; Sun, Zhaoqi; Liu, Xiansong; Wu, Mingzai

    2014-02-01

    Graphical abstract: Different loadings of SnO{sub 2} nanoparticles embedded in mesoporous silica (sample S1, S2 and S3) show higher response to H{sub 2} at lower operating temperature than pure SnO{sub 2} nanoparticles. - Highlights: • Two-solvent method is firstly used to synthesize SnO{sub 2} nanoparticles embedded in mesoporous silica (SBA-15). • The SnO{sub 2}/SBA-15 nanocomposites show higher response to H{sub 2} at lower operating temperature than pure SnO{sub 2} nanoparticles. • The SnO{sub 2}/SBA-15 nanocomposites have higher photodegradation ability toward methylene blue than pure SnO{sub 2} nanoparticles. - Abstract: Different loadings of SnO{sub 2} nanoparticles embedded in mesoporous silica (SBA-15) were prepared via a two-solvent method with the ordered hexagonal mesoporous structure of SBA-15 kept. X-ray diffraction, transmission electron microscope, X-ray photoelectron spectroscopy and N{sub 2} adsorption porosimetry were employed to characterize the nanocomposites. Compared with pure SnO{sub 2} nanoparticles, the SnO{sub 2}/SBA-15 nanocomposites show higher response to H{sub 2} at lower operating temperature. The photocatalytic activity of as-prepared SnO{sub 2}/SBA-15 for degradation of methylene blue was investigated under UV light irradiation and the results show that the SnO{sub 2}/SBA-15 nanocomposites have higher photodegradation ability toward methylene blue than pure SnO{sub 2} nanoparticles.

  18. The Very Early Light Curve of SN 2015F in NGC 2442: A Possible Detection of Shock-Heated Cooling Emission and Constraints on SN Ia Progenitor System

    E-Print Network [OSTI]

    Im, Myungshin; Yoon, Sung-Chul; Kim, Jae-Woo; Ehgamberdiev, Shuhrat A; Monard, Libert A G; Sung, Hyun-Il

    2015-01-01

    The main progenitor candidate of Type Ia supernovae (SNe Ia) is white dwarfs in binary systems where the companion star is another white dwarf (double degenerate system) or a less evolved non-degenerate star with R* >~ 0.1 Rsun (single degenerate system), but no direct observational evidence exists that tells which progenitor system is more common. Recent studies suggest that the light curve of a supernova shortly after its explosion can be used to set a limit on the progenitor size, R*. Here, we report a high cadence monitoring observation of SN 2015F, a normal SN Ia, in the galaxy NGC 2442 starting about 84 days before the first light time. With our daily cadence data, we catch the emergence of the radioactively powered light curve, but more importantly detect with a > 97.4% confidence a possible dim precursor emission that appears at roughly 1.5 days before the rise of the radioactively powered emission. The signal is consistent with theoretical expectations for a progenitor system involving a companion st...

  19. SN~2012cg: Evidence for Interaction Between a Normal Type Ia Supernova and a Non-Degenerate Binary Companion

    E-Print Network [OSTI]

    Marion, G H; Vinkó, Jozsef; Silverman, Jeffrey M; Sand, David J; Challis, Peter; Kirshner, Robert P; Wheeler, J Craig; Berlind, Perry; Brown, Warren R; Calkins, Michael L; Dhungana, Govinda; Foley, Ryan J; Friedman, Andrew S; Graham, Melissa L; Howell, D Andrew; Hsiao, Eric Y; Irwin, Jonathan M; Kehoe, Robert; Macri, Lucas M; Mandel, Kaisey; McCully, Curtis; Rines, Kenneth J; Wilhelmy, Steven; Zheng, Weikang

    2015-01-01

    We report evidence for excess blue light from the Type Ia supernova SN~2012cg at fifteen and sixteen days before maximum B-band brightness. The emission is consistent with predictions for the impact of the supernova on a non-degenerate binary companion. This is the first evidence for emission from a companion to a normal SN~Ia. Sixteen days before maximum light, the B-V color of SN~2012cg is 0.2 mag bluer than for other normal SN~Ia. At later times, this supernova has a typical SN~Ia light curve, with extinction-corrected M_B = -19.62 \\pm 0.02 mag and Delta m_{15}(B) = 0.86 \\pm 0.02. Our data set is extensive, with photometry in 7 filters from 5 independent sources. Early spectra also show the effects of blue light, and high-velocity features are observed at early times. Near maximum, the spectra are normal with a silicon velocity v_{Si} = -10,500 km/s. Comparing the early data with models by Kasen (2010) favors a main-sequence companion of about 6 solar masses. It is possible that many other SN Ia have main-...

  20. DISCOVERY OF THE BROAD-LINED TYPE Ic SN 2013cq ASSOCIATED WITH THE VERY ENERGETIC GRB 130427A

    SciTech Connect (OSTI)

    Xu, D.; Krühler, T.; Hjorth, J.; Malesani, D.; Fynbo, J. P. U.; Watson, D. J.; Geier, S. [Dark Cosmology Centre, Niels Bohr Institute, University of Copenhagen, Juliane Maries Vej 30, DK-2100 København Ø (Denmark); De Ugarte Postigo, A.; Thöne, C. C.; Sánchez-Ramírez, R. [Instituto de Astrofísica de Andalucía, CSIC, Glorieta de la Astronomía s/n, E-18008 Granada (Spain); Leloudas, G. [The Oskar Klein Centre, Department of Physics, Stockholm University, AlbaNova, SE-10691 Stockholm (Sweden); Cano, Z.; Jakobsson, P. [Centre for Astrophysics and Cosmology, Science Institute, University of Iceland, Dunhagi 5, IS-107 Reykjavik (Iceland); Schulze, S. [Departamento de Astronomía y Astrofísica, Pontificia Universidad Católica de Chile, Casilla 306, Santiago 22 (Chile); Kaper, L. [Astronomical Institute Anton Pannekoek, University of Amsterdam, Science Park 904, NL-1098 XH Amsterdam (Netherlands); Sollerman, J. [The Oskar Klein Centre, Department of Astronomy, Stockholm University, AlbaNova, SE-10691 Stockholm (Sweden); Cabrera-Lavers, A. [Instituto de Astrofísica de Canarias, E-38205 La Laguna, Tenerife (Spain); Cao, C. [Department of Space Science and Physics, Shandong University at Weihai, Weihai, Shandong 264209 (China); Covino, S. [INAF/Brera Astronomical Observatory, via Bianchi 46, I-23807 Merate (Italy); Flores, H., E-mail: dong@dark-cosmology.dk [Laboratoire Galaxies Etoiles Physique et Instrumentation, Observatoire de Paris, 5 place Jules Janssen, F-92195 Meudon (France); and others

    2013-10-20

    Long-duration gamma-ray bursts (GRBs) at z < 1 are found in most cases to be accompanied by bright, broad-lined Type Ic supernovae (SNe Ic-BL). The highest-energy GRBs are mostly located at higher redshifts, where the associated SNe are hard to detect observationally. Here, we present early and late observations of the optical counterpart of the very energetic GRB 130427A. Despite its moderate redshift, z = 0.3399 ± 0.0002, GRB 130427A is at the high end of the GRB energy distribution, with an isotropic-equivalent energy release of E{sub iso} ? 9.6 × 10{sup 53} erg, more than an order of magnitude more energetic than other GRBs with spectroscopically confirmed SNe. In our dense photometric monitoring, we detect excess flux in the host-subtracted r-band light curve, consistent with that expected from an emerging SN, ?0.2 mag fainter than the prototypical SN 1998bw. A spectrum obtained around the time of the SN peak (16.7 days after the GRB) reveals broad undulations typical of SNe Ic-BL, confirming the presence of an SN, designated SN 2013cq. The spectral shape and early peak time are similar to those of the high expansion velocity SN 2010bh associated with GRB 100316D. Our findings demonstrate that high-energy, long-duration GRBs, commonly detected at high redshift, can also be associated with SNe Ic-BL, pointing to a common progenitor mechanism.

  1. Unusual magnetic hysteresis and the weakened transition behavior induced by Sn substitution in Mn{sub 3}SbN

    SciTech Connect (OSTI)

    Sun, Ying, E-mail: sunying@buaa.edu.cn [Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University, Beijing 100191 (China); International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Guo, Yanfeng; Li, Jun; Wang, Xia [Superconducting Properties Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Tsujimoto, Yoshihiro [Materials Processing Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Wang, Cong [Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University, Beijing 100191 (China); Feng, Hai L.; Sathish, Clastin I.; Yamaura, Kazunari, E-mail: yamaura.kazunari@nims.go.jp [Superconducting Properties Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Matsushita, Yoshitaka [Analysis Station, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-01-28

    Substitution of Sb with Sn was achieved in ferrimagnetic antiperovskite Mn{sub 3}SbN. The experimental results indicate that with an increase in Sn concentration, the magnetization continuously decreases and the crystal structure of Mn{sub 3}Sb{sub 1-x}Sn{sub x}N changes from tetragonal to cubic phase at around x of 0.8. In the doping series, step-like anomaly in the isothermal magnetization was found and this behavior was highlighted at x?=?0.4. The anomaly could be attributed to the magnetic frustration, resulting from competition between the multiple spin configurations in the antiperovskite lattice. Meantime, H{sub c} of 18 kOe was observed at x?=?0.3, which is probably the highest among those of manganese antiperovskite materials reported so far. With increasing Sn content, the abrupt change of resistivity and the sharp peak of heat capacity in Mn{sub 3}SbN were gradually weakened. The crystal structure refinements indicate the weakened change at the magnetic transition is close related to the change of c/a ratio variation from tetragonal to cubic with Sn content. The results derived from this study indicate that the behavior of Mn{sub 3}Sb{sub 1-x}Sn{sub x}N could potentially enhance its scientific and technical applications, such as spin torque transfer and hard magnets.

  2. Host galaxy spectra and consequences for supernova typing from the SDSS SN survey

    SciTech Connect (OSTI)

    Olmstead, Matthew D.; Brown, Peter J.; Brownstein, Joel R.; Dawson, Kyle S. [Department of Physics and Astronomy, University of Utah, Salt Lake City, UT 84112 (United States); Sako, Masao; Gupta, Ravi R. [Department of Physics and Astronomy, University of Pennsylvania, 209 South 33rd Street, Philadelphia, PA 19104 (United States); Bassett, Bruce; Kunz, Martin [African Institute for Mathematical Sciences, 6 Melrose Road, Muizenberg, 7945 (South Africa); Bizyaev, Dmitry; Brinkmann, J.; Brewington, Howard; Ebelke, Garrett L. [Apache Point Observatory, P.O. Box 59, Sunspot, NM 88349 (United States); Campbell, Heather [Institute of Astronomy, Madingley Road, Cambridge CB4 0HA (United Kingdom); D'Andrea, Chris B.; Lampeitl, Hubert [Institute of Cosmology and Gravitation, Dennis Sciama Building, University of Portsmouth, Portsmouth, PO1 3FX (United Kingdom); Frieman, Joshua A. [Center for Particle Astrophysics, Fermi National Accelerator Laboratory, P.O. Box 500, Batavia, IL 60510 (United States); Galbany, Lluís [Institut de Física d'Altes Energies, Universitat Autònoma de Barcelona, E-08193 Bellaterra (Barcelona) (Spain); Garnavich, Peter [Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States); Hlozek, Renee [Department of Astrophysics, Peyton Hall, 4 Ivy Lane, Princeton, NJ 08544 (United States); Jha, Saurabh W., E-mail: olmstead@physics.utah.edu [Department of Physics and Astronomy, Rutgers, the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, NJ 08854 (United States); and others

    2014-04-01

    We present the spectroscopy from 5254 galaxies that hosted supernovae (SNe) or other transient events in the Sloan Digital Sky Survey II (SDSS-II). Obtained during SDSS-I, SDSS-II, and the Baryon Oscillation Spectroscopic Survey, this sample represents the largest systematic, unbiased, magnitude limited spectroscopic survey of SN host galaxies. Using the host galaxy redshifts, we test the impact of photometric SN classification based on SDSS imaging data with and without using spectroscopic redshifts of the host galaxies. Following our suggested scheme, there are a total of 1166 photometrically classified SNe Ia when using a flat redshift prior and 1126 SNe Ia when the host spectroscopic redshift is assumed. For 1024 (87.8%) candidates classified as likely SNe Ia without redshift information, we find that the classification is unchanged when adding the host galaxy redshift. Using photometry from SDSS imaging data and the host galaxy spectra, we also report host galaxy properties for use in future analysis of SN astrophysics. Finally, we investigate the differences in the interpretation of the light curve properties with and without knowledge of the redshift. Without host galaxy redshifts, we find that SALT2 light curve fits are systematically biased toward lower photometric redshift estimates and redder colors in the limit of low signal-to-noise data. The general improvements in performance of the light curve fitter and the increased diversity of the host galaxy sample highlights the importance of host galaxy spectroscopy for current photometric SN surveys such as the Dark Energy Survey and future surveys such as the Large Synoptic Survey Telescope.

  3. EARLY OBSERVATIONS AND ANALYSIS OF THE TYPE Ia SN 2014J IN M82

    SciTech Connect (OSTI)

    Marion, G. H.; Vinkó, J. [University of Texas at Austin, 1 University Station C1400, Austin, TX 78712-0259 (United States); Sand, D. J. [Physics Department, Texas Tech University, Lubbock, TX 79409 (United States); Hsiao, E. Y. [Carnegie Observatories, Las Campanas Observatory, Colina El Pino, Casilla 601 (Chile); Banerjee, D. P. K.; Joshi, V.; Venkataraman, V.; Ashok, N. M. [Astronomy and Astrophysics Division, Physical Research Laboratory, Navrangapura, Ahmedabad - 380009, Gujarat (India); Valenti, S.; Howell, D. A. [Las Cumbres Observatory Global Telescope Network, 6740 Cortona Drive, Suite 102, Santa Barbara, CA 93117 (United States); Stritzinger, M. D. [Department of Physics and Astronomy, Aarhus University, Ny Munkegade 120, DK-8000 Aarhus C (Denmark); Amanullah, R.; Johansson, J. [The Oskar Klein Centre, Physics Department, Stockholm University, Albanova University Center, SE 106 91 Stockholm (Sweden); Binzel, R. P. [Department of Earth, Atmospheric, and Planetary Sciences, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Bochanski, J. J. [Haverford College, 370 Lancaster Avenue, Haverford, PA 19041 (United States); Bryngelson, G. L. [Department of Physics and Astronomy, Francis Marion University, 4822 East Palmetto Street, Florence, SC 29506 (United States); Burns, C. R. [Observatories of the Carnegie Institution for Science, 813 Santa Barbara Street, Pasadena, CA 91101 (United States); Drozdov, D. [Department of Physics and Astronomy, Clemson University, 8304 University Station, Clemson, SC 29634 (United States); Fieber-Beyer, S. K. [Department of Space Studies, University of North Dakota, University Stop 9008, ND 58202 (United States); Graham, M. L., E-mail: hman@astro.as.utexas.edu [Astronomy Department, University of California at Berkeley, Berkeley, CA 94720 (United States); and others

    2015-01-01

    We present optical and near infrared (NIR) observations of the nearby Type Ia SN 2014J. Seventeen optical and 23 NIR spectra were obtained from 10 days before (–10d) to 10 days after (+10d) the time of maximum B-band brightness. The relative strengths of absorption features and their patterns of development can be compared at one day intervals throughout most of this period. Carbon is not detected in the optical spectra, but we identify C I ?1.0693 in the NIR spectra. Mg II lines with high oscillator strengths have higher initial velocities than other Mg II lines. We show that the velocity differences can be explained by differences in optical depths due to oscillator strengths. The spectra of SN 2014J show that it is a normal SN Ia, but many parameters are near the boundaries between normal and high-velocity subclasses. The velocities for O I, Mg II, Si II, S II, Ca II, and Fe II suggest that SN 2014J has a layered structure with little or no mixing. That result is consistent with the delayed detonation explosion models. We also report photometric observations, obtained from –10d to +29d, in the UBVRIJH and K{sub s} bands. The template fitting package SNooPy is used to interpret the light curves and to derive photometric parameters. Using R{sub V} = 1.46, which is consistent with previous studies, SNooPy finds that A{sub V} = 1.80 for E(B – V){sub host} = 1.23 ± 0.06 mag. The maximum B-band brightness of –19.19 ± 0.10 mag was reached on February 1.74 UT ± 0.13 days and the supernova has a decline parameter, ?m {sub 15}, of 1.12 ± 0.02 mag.

  4. Development of Cryogenic Bolometer for 0{nu}{beta}{beta} in {sup 124}Sn

    SciTech Connect (OSTI)

    Singh, Vivek; Mathimalar, S.; Dokania, Neha [INO, Tata Institute of Fundamental Research, Mumbai 400 005 (India); Yashwant, G.; Nanal, V.; Pillay, R. G. [Dept. of Nuclear and Atomic Physics, Tata Institute of Fundamental Research, Mumbai 400 005 (India); Datar, V. M. [Nuclear Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India)

    2011-11-23

    Cryogenic bolometer detectors, with their high resolution spectroscopy capability, are ideal for neutrino mass experiments as well as for search of rare processes like neutrinoless double beta decay (0{nu}{beta}{beta}) and dark matter. A feasibility study for investigation of 0{nu}{beta}{beta} in {sup 124}Sn at the upcoming underground facility of India based Neutrino Observatory (INO) has been initiated. This paper describes endeavors towards cryogenic tin bolometer development.

  5. Preparation and Characterization of SnO Nanoplatelets by Microwave Innovative Technique

    SciTech Connect (OSTI)

    Krishnakumar, T.; Perumal, K.; Jayaprakash, R. [Nanotechnology Lab, Department of physics, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore, Tamilnadu--641 020 (India); Pinna, Nicola [Department of Chemistry and CICECO, University of de Aveiro, Campus Universitario de Santiago, 3810-193 Aveiro (Portugal)

    2008-04-23

    Tin oxide (SnO) nanoplatelets have been synthesized by a Microwave innovative technique with an operating frequency of 2.45 GHz in just few minutes. The crystalline size and structure was evaluated from XRD pattern. The SEM and TEM analysis showed the single crystal platelets together with many small particles attached to its surface. The FT-IR and the electrical conductivity of the samples have also been investigated.

  6. SN 2009ip: CONSTRAINTS ON THE PROGENITOR MASS-LOSS RATE

    SciTech Connect (OSTI)

    Ofek, E. O.; Lin, L.; Goegues, E.; Kouveliotou, C.; Kasliwal, M. M.; Cao, Y.

    2013-05-01

    Some supernovae (SNe) show evidence for mass-loss events taking place prior to their explosions. Measuring their pre-outburst mass-loss rates provides essential information regarding the mechanisms that are responsible for these events. Here we present XMM-Newton and Swift X-ray observations taken after the latest, and presumably the final, outburst of SN 2009ip. We use these observations as well as new near-infrared and visible-light spectra and published radio and visible-light observations to put six independent order-of-magnitude constraints on the mass-loss rate of the SN progenitor prior to the explosion. Our methods utilize the X-ray luminosity, the bound-free absorption, the H{alpha} luminosity, the SN rise time, free-free absorption, and the bolometric luminosity of the outburst detected prior to the explosion. Assuming spherical mass loss with a wind-density profile, we estimate that the effective mass-loss rate from the progenitor was between 10{sup -3} and 10{sup -2} M{sub Sun} yr{sup -1}, over a few years prior to the explosion, with a velocity of {approx}10{sup 3} km s{sup -1}. This mass-loss rate corresponds to a total circumstellar matter (CSM) mass of {approx}0.04 M{sub Sun }, within 6 Multiplication-Sign 10{sup 15} cm of the SN. We note that the mass-loss rate estimate based on the H{alpha} luminosity is higher by an order of magnitude. This can be explained if the narrow-line H{alpha} component is generated at radii larger than the shock radius, or if the CSM has an aspherical geometry. We discuss simple geometries which are consistent with our results.

  7. Effects of phonon-phonon coupling on properties of pygmy resonance in $^{124-132}$Sn

    E-Print Network [OSTI]

    N. N. Arsenyev; A. P. Severyukhin; V. V. Voronov; Nguyen Van Giai

    2012-09-27

    Starting from an effective Skyrme interaction we study effects of phonon-phonon coupling on the low-energy electric dipole response in $^{124-132}$Sn. The QRPA calculations are performed within a finite rank separable approximation. The inclusion of two-phonon configurations gives a considerable contribution to low-lying strength. Comparison with available experimental data shows a reasonable agreement for the low-energy $E1$ strength distribution.

  8. Incorporation of trace elements in Portland cement clinker: Thresholds limits for Cu, Ni, Sn or Zn

    SciTech Connect (OSTI)

    Gineys, N.; Aouad, G.; Sorrentino, F.; Damidot, D.

    2011-11-15

    This paper aims at defining precisely, the threshold limits for several trace elements (Cu, Ni, Sn or Zn) which correspond to the maximum amount that could be incorporated into a standard clinker whilst reaching the limit of solid solution of its four major phases (C{sub 3}S, C{sub 2}S, C{sub 3}A and C{sub 4}AF). These threshold limits were investigated through laboratory synthesised clinkers that were mainly studied by X-ray Diffraction and Scanning Electron Microscopy. The reference clinker was close to a typical Portland clinker (65% C{sub 3}S, 18% C{sub 2}S, 8% C{sub 3}A and 8% C{sub 4}AF). The threshold limits for Cu, Ni, Zn and Sn are quite high with respect to the current contents in clinker and were respectively equal to 0.35, 0.5, 0.7 and 1 wt.%. It appeared that beyond the defined threshold limits, trace elements had different behaviours. Ni was associated with Mg as a magnesium nickel oxide (MgNiO{sub 2}) and Sn reacted with lime to form a calcium stannate (Ca{sub 2}SnO{sub 4}). Cu changed the crystallisation process and affected therefore the formation of C{sub 3}S. Indeed a high content of Cu in clinker led to the decomposition of C{sub 3}S into C{sub 2}S and of free lime. Zn, in turn, affected the formation of C{sub 3}A. Ca{sub 6}Zn{sub 3}Al{sub 4}O{sub 15} was formed whilst a tremendous reduction of C{sub 3}A content was identified. The reactivity of cements made with the clinkers at the threshold limits was followed by calorimetry and compressive strength measurements on cement paste. The results revealed that the doped cements were at least as reactive as the reference cement.

  9. Field quality of the Fermilab NB3SN cos-theta dipole models

    SciTech Connect (OSTI)

    E. Barzi et al.

    2002-06-28

    Three short Nb{sub 3}Sn dipole models based on a single-bore cos-theta coil and a cold iron yoke have been fabricated and tested at Fermilab. This paper summarizes the results of magnetic measurements in those models. The geometrical harmonics, coil magnetization effects, cable eddy currents with and without a stainless steel core, and the ''snap-back'' effect at injection are presented.

  10. Shell-shocked diffusion model for the light curve of SN2006gy

    E-Print Network [OSTI]

    Nathan Smith; Richard McCray

    2007-10-18

    We explore a simple model for the high luminosity of SN 2006gy involving photon diffusion of shock-deposited thermal energy. The distinguishing property of the model is that the large ``stellar'' radius of 160 AU required to prevent adiabatic losses is not the true stellar radius, but rather, the radius of an opaque, unbound circumstellar envelope, created when 10 Msun was ejected in the decade before the supernova in an eruption analogous to that of eta Carinae. The supernova light is produced primarily by diffusion of thermal energy following the passage of the blast wave through this shell. This model differs from traditional models of supernova debris interacting with external CSM in that here the shell is optically thick and the escape of radiation is delayed. We show that any model attempting to account for SN2006gy's huge luminosity with radiation emitted by ongoing CSM interaction fails for the following basic reason: the CSM density required to achieve the observed luminosity makes the same circumstellar envelope opaque, forcing a thermal diffusion solution. In our model, the weaker CSM interaction giving rise to SN2006gy's characteristic Type IIn spectrum and soft X-rays is not linked to the power source of the visual continuum; instead, it arises after the blast wave breaks free of the opaque shell into the surrounding wind. While a simple diffusion model can explain the gross properties of the early light curve of SN2006gy, it predicts that the light curve must plummet rapidly at late-times, unless an additional power source is present.

  11. Strained Sistrained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor

    E-Print Network [OSTI]

    Strained SiÕstrained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility By growing heterostructures that combine a surface strained Si layer with a buried strained Ge layer on Si0.5Ge0.5 , we have fabricated metal-oxide-semiconductor field-effect transistors with mobility

  12. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2}

    SciTech Connect (OSTI)

    Peter, Sebastian C. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064 (India); Malliakas, Christos D. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Nakotte, Heinze; Kothapilli, Karunakar [Physics Department, New Mexico State University, Las Cruces, NM 88003 (United States); Los Alamos Neutron Science Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Rayaprol, Sudhindra [UGC-DAE Consortium for Scientific Research, Mumbai Centre, BARC, R-5 Shed, Trombay, Mumbai 400085 (India); Schultz, Arthur J. [X-Ray Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Kanatzidis, Mercouri G., E-mail: m-kanatzidis@northwestern.edu [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Materials Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States)

    2012-03-15

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a=12.2261(20) Angstrom-Sign , b=10.7447(20) Angstrom-Sign , c=8.4754(17) Angstrom-Sign and {beta}=110.288(30) Degree-Sign (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge){sub n}. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a=b=5.9874(6) Angstrom-Sign and c=15.1178(19) Angstrom-Sign . The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{proportional_to}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures. - Graphical abstract: The compounds Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are obtained from reactions of Yb and Ge in excess liquid gallium. Highlights: Black-Right-Pointing-Pointer Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are two new polygallides. Black-Right-Pointing-Pointer The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was established using neutron diffraction data. Black-Right-Pointing-Pointer YbGa{sub 4}Ge{sub 2} is one of the rare polar intermetallic compounds. Black-Right-Pointing-Pointer The physical properties of Yb{sub 3}Ga{sub 7}Ge{sub 3} point to a Fermi-liquid regime at low temperature.

  13. Impact ionization of excitons in Ge/Si structures with Ge quantum dots grown on the oxidized Si(100) surfaces

    SciTech Connect (OSTI)

    Shklyaev, A. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Shegai, O. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Nakamura, Y. [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Ichikawa, M. [Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2014-05-28

    Photoconductivity (PC) of Si/Ge structures with Ge quantum dots (QDs) grown on the Si(100) surfaces covered with the ultrathin, about 0.3–0.5?nm thick, SiO{sub 2} films is studied as a function of the interband light intensity under various lateral voltages. The structures exhibit PC with steps and a step with a peak at the step edge for low- and high-temperature grown structures, respectively. These PC features are associated with the impact ionization of QD-related excitons. The PC at step edges increases by several orders of magnitude for a certain value which is governed by the balance between rates of photo-generation, recombination, and impact ionization of excitons. The electron localization deeper in Si from the Ge QD layer in conjunction with a narrow binding-energy distribution of excitons is suggested to be the main reason that provides the sharpness of PC steps. The PC appears to be very sensitive to the impact ionization and QD preparation conditions. This allows revealing the specific characteristics of QD structures, related to their electronic and structural properties.

  14. Optical and NIR observations of the nearby type Ia supernova SN 2014J

    E-Print Network [OSTI]

    Srivastav, Shubham; Kumar, Brajesh; Anupama, G C; Sahu, D K; Ojha, D K; Prabhu, T P

    2016-01-01

    Optical and NIR observations of the type Ia supernova SN 2014J in M82 are presented. The observed light curves are found to be similar to normal SNe Ia, with a decline rate parameter $\\Delta m_{15}(B) = 1.08 \\pm 0.03$. The supernova reached $B$-band maximum on JD 2456690.14, at an apparent magnitude $m_B(max) = 11.94$. The optical spectra show a red continuum with deep interstellar Na~{\\sc i} absorption, but otherwise resemble those of normal SNe Ia. The Si~{\\sc ii} $\\lambda 6355$ feature indicates a velocity of $\\sim 12\\,000$ km s$^{-1}$ at $B$-band maximum, which places SN 2014J at the border of the Normal Velocity and High Velocity group of SNe Ia. The velocity evolution of SN 2014J places it in the Low Velocity Gradient subclass, whereas the equivalent widths of Si~{\\sc ii} features near $B$-band maximum place it at the border of the Core Normal and Broad Line subclasses of SNe Ia. An analytic model fit to the bolometric light curve indicates that a total of $\\sim 1.3$ M$_{\\odot}$ was ejected in the explo...

  15. DETECTION OF AN OUTBURST ONE YEAR PRIOR TO THE EXPLOSION OF SN 2011ht

    SciTech Connect (OSTI)

    Fraser, M.; Magee, M.; Kotak, R.; Smartt, S. J.; Smith, K. W.; Polshaw, J. [School of Mathematics and Physics, Queens University Belfast, Belfast BT7 1NN (United Kingdom); Drake, A. J. [Department of Astronomy and the Center for Advanced Computing Research, California Institute of Technology, Pasadena, CA 91225 (United States); Boles, T. [Coddenham Astronomical Observatory, Suffolk IP6 9QY (United Kingdom); Lee, C.-H. [University Observatory Munich, Scheinerstrasse 1, D-81679 Munich (Germany); Burgett, W. S.; Chambers, K. C.; Flewelling, H.; Hodapp, K. W.; Kaiser, N.; Kudritzki, R.-P.; Magnier, E. A.; Tonry, J. L.; Wainscoat, R. J. [Institute for Astronomy, University of Hawaii at Manoa, Honolulu, HI 96822 (United States); Draper, P. W. [Department of Physics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Price, P. A., E-mail: m.fraser@qub.ac.uk [Department of Astrophysical Sciences, Princeton University, Princeton, NJ 08544 (United States); and others

    2013-12-10

    Using imaging from the Pan-STARRS1 survey, we identify a precursor outburst at 287 and 170 days prior to the reported explosion of the purported Type IIn supernova (SN) 2011ht. In the Pan-STARRS data, a source coincident with SN 2011ht is detected exclusively in the z {sub P1} and y {sub P1}-bands. An absolute magnitude of M{sub z} ? –11.8 suggests that this was an outburst of the progenitor star. Unfiltered, archival Catalina Real Time Transient Survey images also reveal a coincident source from at least 258 to 138 days before the main event. We suggest that the outburst is likely to be an intrinsically red eruption, although we cannot conclusively exclude a series of erratic outbursts which were observed only in the redder bands by chance. This is only the fourth detection of an outburst prior to a claimed SN, and lends credence to the possibility that many more interacting transients have pre-explosion outbursts, which have been missed by current surveys.

  16. A LUMINOUS AND FAST-EXPANDING TYPE Ib SUPERNOVA SN 2012au

    SciTech Connect (OSTI)

    Takaki, Katsutoshi; Fukazawa, Yasushi; Itoh, Ryosuke; Ueno, Issei; Ui, Takahiro; Urano, Takeshi [Department of Physical Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8526 (Japan); Kawabata, Koji S.; Akitaya, Hiroshi; Moritani, Yuki; Ohsugi, Takashi; Uemura, Makoto; Yoshida, Michitoshi [Hiroshima Astrophysical Science Center, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8526 (Japan); Yamanaka, Masayuki [Kwasan Observatory, Kyoto University, Ohmine-cho Kita Kazan, Yamashina-ku, Kyoto 607-8471 (Japan); Maeda, Keiichi; Nomoto, Ken'ichi [Kavli Institute for the Physics and Mathematics of the Universe (WPI), Todai Institutes for Advanced Study, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8583 (Japan); Tanaka, Masaomi [National Astronomical Observatory of Japan, 2-21-1 Osawa, Mitaka, Tokyo 181-8588 (Japan); Kinugasa, Kenzo [Nobeyama Radio Observatory, National Astronomical Observatory of Japan, 462-2 Nobeyama, Minamimaki, Nagano 384-1305 (Japan); Sasada, Mahito, E-mail: takaki@hep01.hepl.hiroshima-u.ac.jp [Department of Astronomy, Kyoto University, Kitashirakawa-Oiwake-cho, Sakyo-ku, Kyoto 606-8502 (Japan)

    2013-08-01

    We present a set of photometric and spectroscopic observations of a bright Type Ib supernova SN 2012au from -6 days until {approx} + 150 days after maximum. The shape of its early R-band light curve is similar to that of an average Type Ib/c supernova. The peak absolute magnitude is M{sub R} = -18.7 {+-} 0.2 mag, which suggests that this supernova belongs to a very luminous group among Type Ib supernovae. The line velocity of He I {lambda}5876 is about 15,000 km s{sup -1} around maximum, which is much faster than that in a typical Type Ib supernova. From the quasi-bolometric peak luminosity of (6.7 {+-} 1.3) Multiplication-Sign 10{sup 42} erg s{sup -1}, we estimate the {sup 56}Ni mass produced during the explosion as {approx}0.30 M{sub Sun }. We also give a rough constraint to the ejecta mass 5-7 M{sub Sun} and the kinetic energy (7-18) Multiplication-Sign 10{sup 51} erg. We find a weak correlation between the peak absolute magnitude and He I velocity among Type Ib SNe. The similarities to SN 1998bw in the density structure inferred from the light-curve model as well as the large peak bolometric luminosity suggest that SN 2012au had properties similar to energetic Type Ic supernovae.

  17. In Situ Observation of the Electrochemical Lithiation of a Single SnO2 Nanowire Electrode

    SciTech Connect (OSTI)

    Huang, J. Y.; Zhong, Li; Wang, Chong M.; Sullivan, John P.; Xu, Wu; Zhang, Li Q.; Mao, Scott; Hudak, N.; Liu, Xiao H.; Subramanian, Arun Kumar; Fan, Hongyou; Qi, Liang; Kushima, Akihiro; Li, Ju

    2010-11-18

    We report the first real-time transmission electron microscopy (TEM) observations of the structural evolution and phase transformation of lithium-ion battery anode during the battery charging process. A nanobattery consisting of a single SnO2 nanowire anode and an ionic liquid electrolyte was successfully constructed in a TEM. We observed that during the charging process, the SnO2 crystal was converted to Li2O glass with LixSn nanocrystalline precipitates as the reaction front propagated progressively along the nanowire. After the reaction front passed, the nanowire showed swelling, elongation, and large off-axis distortion (spiraling). Upon completion of the electrochemical charging, the nanowire showed up to 120% elongation and a 30% increase in diameter with a volume expansion of about 272%. The charging front, which separates the reacted and unreacted sections of the nanowire, contains a high density of mobile dislocations, which are continuously nucleated and annihilated at the moving reaction front. This dislocation cloud indicates large in-plane misfit stresses, and serves as structural precursor to the eventual complete solid-state amorphization. The rate of charging in our nanobatteries is found to be proportional to the inverse square root of nanowire length, indicating that a standalone nanobattery or integrated arrays of nanobatteries should have kinetic advantage over conventional battery design. The present observations also provide important mechanistic insights for the design of advanced batteries with improved performance and lifetime for broad electrical energy storage applications.

  18. Understanding Irreversible Degradation of Nb3Sn Wires with Fundamental Fracture Mechanics

    SciTech Connect (OSTI)

    Zhai, Yuhu; Calzolaio, Ciro; Senatore, Carmine

    2014-08-01

    Irreversible performance degradation of advanced Nb3Sn superconducting wires subjected to transverse or axial mechanical loading is a critical issue for the design of large-scale fusion and accelerator magnets such as ITER and LHC. Recent SULTAN tests indicate that most cable-in-conduit conductors for ITER coils made of Nb3Sn wires processed by various fabrication techniques show similar performance degradation under cyclic loading. The irreversible degradation due to filament fracture and local strain accumulation in Nb3Sn wires cannot be described by the existing strand scaling law. Fracture mechanic modeling combined with X-ray diffraction imaging of filament micro-crack formation inside the wires under mechanical loading may reveal exciting insights to the wire degradation mechanisms. We apply fundamental fracture mechanics with a singularity approach to study influence of wire filament microstructure of initial void size and distribution to local stress concentration and potential crack propagation. We report impact of the scale and density of the void structure on stress concentration in the composite wire materials for crack initiation. These initial defects result in an irreversible degradation of the critical current beyond certain applied stress. We also discuss options to minimize stress concentration in the design of the material microstructure for enhanced wire performance for future applications.

  19. On the Radio-to-X-ray light curves of SN 1998bw and GRB 980425

    E-Print Network [OSTI]

    K. Iwamoto

    1999-03-31

    We calculate radio-to-X-ray light curves for afterglows caused by non-thermal emission from a highly relativistic blast wave, which is inferred from the gamma-ray flux detected in GRB 980425 and from the very bright radio emission detected in SN 1998bw. We find that the observed gamma-ray and radio light curves are roughly reproduced by the synchrotron emission from a relativistic fireball. The optical flux predicted for the non-thermal emission is well below that of the thermal emission observed for SN 1998bw so that it will not be seen at least for a few years. The model predicts the X-ray flux just above the detection limit of BeppoSAX for the epoch when it was pointed to the field of GRB980425. Therefore, the nondetection of X-ray and optical afterglows is consistent with the model. The models presented here are consistent with the physical association between SN 1998bw and GRB980425, and lend further support to the idea that this object might correspond to an event similar to the ``hypernova'' or ``collapsar'' -- events in which the collapse of a massive star forms a rotating black hole surrounded by a disk of the remnant stellar mantle.

  20. Commissioning results of Nb3Sn cavity vapor diffusion deposition system at Jlab

    SciTech Connect (OSTI)

    Eremeev, Grigory; Clemens, William A.; Macha, Kurt M.; Park, HyeKyoung; Williams, R.

    2015-09-01

    Nb3Sn as a BCS superconductor with a superconducting critical temperature higher than that of niobium offers potential benefit for SRF cavities via a lower-than-niobium surface resistance at the same temperature and frequency. A Nb3Sn vapor diffusion deposition system designed for coating of 1.5 and 1.3 GHz single-cell cavities was built and commissioned at JLab. As the part of the commissioning, RF performance at 2.0 K of a single-cell 1.5 GHz CEBAF-shaped cavity was measured before and after coating in the system. Before Nb3Sn coating the cavity had a Q0 of about 10E10 and was limited by the high field Q-slope at Eacc about 27 MV/m. Coated cavity exhibited the superconducting transition at about 17.9 K. The low-field quality factor was about 5 10E9 at 4.3 K and 7 10E9 at 2.0 K decreasing with field to about 1 10E9 at Eacc about 8 MV/m at both temperatures. The highest field was limited by the available RF power.