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Sample records for uut ge sn

  1. Epi-cleaning of Ge/GeSn heterostructures

    SciTech Connect (OSTI)

    Di Gaspare, L.; Sabbagh, D.; De Seta, M.; Sodo, A.; Wirths, S.; Buca, D.; Zaumseil, P.; Schroeder, T.; Capellini, G.

    2015-01-28

    We demonstrate a very-low temperature cleaning technique based on atomic hydrogen irradiation for highly (1%) tensile strained Ge epilayers grown on metastable, partially strain relaxed GeSn buffer layers. Atomic hydrogen is obtained by catalytic cracking of hydrogen gas on a hot tungsten filament in an ultra-high vacuum chamber. X-ray photoemission spectroscopy, reflection high energy electron spectroscopy, atomic force microscopy, secondary ion mass spectroscopy, and micro-Raman showed that an O- and C-free Ge surface was achieved, while maintaining the same roughness and strain condition of the as-deposited sample and without any Sn segregation, at a process temperature in the 100–300 °C range.

  2. ON THE PROGENITOR AND SUPERNOVA OF THE SN 2002cx-LIKE SUPERNOVA 2008ge ,

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    (Journal Article) | SciTech Connect ON THE PROGENITOR AND SUPERNOVA OF THE SN 2002cx-LIKE SUPERNOVA 2008ge , Citation Details In-Document Search Title: ON THE PROGENITOR AND SUPERNOVA OF THE SN 2002cx-LIKE SUPERNOVA 2008ge , We present observations of supernova (SN) 2008ge, which is spectroscopically similar to the peculiar SN 2002cx, and its pre-explosion site indicating that its progenitor was probably a white dwarf. NGC 1527, the host galaxy of SN 2008ge, is an S0 galaxy with no evidence

  3. Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS

    SciTech Connect (OSTI)

    Fei, Ruixiang; Yang, Li; Li, Wenbin; Li, Ju

    2015-10-26

    We predict enormous, anisotropic piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe, and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their piezoelectric coefficients are about one to two orders of magnitude larger than those of other 2D materials, such as MoS{sub 2} and GaSe, and bulk quartz and AlN which are widely used in industry. This enhancement is a result of the unique “puckered” C{sub 2v} symmetry and electronic structure of monolayer group IV monochalcogenides. Given the achieved experimental advances in the fabrication of monolayers, their flexible character, and ability to withstand enormous strain, these 2D structures with giant piezoelectric effects may be promising for a broad range of applications such as nano-sized sensors, piezotronics, and energy harvesting in portable electronic devices.

  4. Formation of non-substitutional ?-Sn defects in Ge{sub 1?x}Sn{sub x} alloys

    SciTech Connect (OSTI)

    Fuhr, J. D.; Ventura, C. I.; Barrio, R. A.

    2013-11-21

    Although group IV semiconductor alloys are expected to form substitutionally, in Ge{sub 1?x}Sn{sub x} this is true only for low concentrations (x?Sn), consisting of a single Sn atom in the center of a Ge divacancy, which may account for the segregation of Sn at large x. Afterwards, the existence of this defect was confirmed experimentally. In this paper we study the local environment and the interactions of the substitutional defect (?-Sn), the vacancy in Ge, and the ?-Sn defect by performing extensive numerical ab initio calculations. Our results confirm that a ?-Sn defect can be formed by natural diffusion of a vacancy around the substitutional ?-Sn defect, since the energy barrier for the process is very small.

  5. Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate

    SciTech Connect (OSTI)

    Taoka, Noriyuki Fukudome, Motoshi; Takeuchi, Wakana; Arahira, Takamitsu; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2014-05-07

    The interaction of Sn atoms with defects induced by Sn implantation of Ge substrates with antimony (Sb) as an n-type dopant and the impact of H{sub 2} annealing on these defects were investigated by comparison with defects induced by Ge self-implantation. In the Ge samples implanted with either Sn or Ge, and annealed at temperatures of less than 200?C, divacancies, Sb-vacancy complexes with single or double acceptor-like states, and defects related to Sb and interstitial Ge atoms were present. On the other hand, after annealing at 500?C in an N{sub 2} or H{sub 2} atmosphere, defects with different structures were observed in the Sn-implanted samples by deep level transition spectroscopy. The energy levels of the defects were 0.33?eV from the conduction band minimum and 0.55?eV from the valence band maximum. From the capacitance-voltage (C-V) characteristics, interaction between Sn atoms and defects after annealing at 500?C was observed. The effect of H{sub 2} annealing at around 200?C was observed in the C-V characteristics, which can be attributed to hydrogen passivation, and this effect was observed in both the Ge- and Sn-implanted samples. These results suggest the presence of defects that interact with Sn or hydrogen atoms. This indicates the possibility of defect control in Ge substrates by Sn or hydrogen incorporation. Such defect control could yield high-performance Ge-based devices.

  6. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

    SciTech Connect (OSTI)

    Senaratne, C. L.; Kouvetakis, J.; Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menndez, J.; Aoki, Toshihiro

    2014-10-07

    Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ? 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ? 0.06, the CVD precursors used were digermane Ge?H? and deuterated stannane SnD?. For y ? 0.06, the Ge precursor was changed to trigermane Ge?H?, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge?H?? as the Ge source. The photoluminescence intensity from Ge{sub 1y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 ?m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamondcubic lattice.

  7. Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

    SciTech Connect (OSTI)

    Gallagher, J. D.; Menéndez, J.; Senaratne, C. L.; Sims, P.; Kouvetakis, J.; Aoki, T.

    2015-03-02

    The emission properties of GeSn heterostructure pin diodes have been investigated. The devices contain thick (400–600 nm) Ge{sub 1−y}Sn{sub y} i-layers spanning a broad compositional range below and above the crossover Sn concentration y{sub c} where the Ge{sub 1−y}Sn{sub y} alloy becomes a direct-gap material. These results are made possible by an optimized device architecture containing a single defected interface thereby mitigating the deleterious effects of mismatch-induced defects. The observed emission intensities as a function of composition show the contributions from two separate trends: an increase in direct gap emission as the Sn concentration is increased, as expected from the reduction and eventual reversal of the separation between the direct and indirect edges, and a parallel increase in non-radiative recombination when the mismatch strains between the structure components is partially relaxed by the generation of misfit dislocations. An estimation of recombination times based on the observed electroluminescence intensities is found to be strongly correlated with the reverse-bias dark current measured in the same devices.

  8. Reliable Nanomanufacturing of Ge-Sn Alloys for Solar Energy Conversion |

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    The Ames Laboratory Reliable Nanomanufacturing of Ge-Sn Alloys for Solar Energy Conversion Based on the US Department of Energy's International Energy Outlook 2014 report, global consumption of energy is estimated to rise by more than 50% between 2004 and 2030. One of the biggest scientific challenges is finding a clean renewable energy resource that will replace fossil fuels and avoid adverse effects on climate, environment, and health. This project aims to advance our understanding of the

  9. The interaction between divacancies and shallow dopants in irradiated Ge:Sn

    SciTech Connect (OSTI)

    Khirunenko, L. I.; Pomozov, Yu. V.; Sosnin, M. G.; Abrosimov, N. V.; Riemann, H.

    2014-02-21

    It has been found that upon annealing of irradiated Ge doped with gallium and Sn simultaneously with disappearance of divacancies V{sub 2}{sup 0} the appearance of the new absorption spectrum consisting of sharp lines was observed. The spectrum is identical to the absorption spectrum of gallium. It is shown that the defect, to which the new spectrum corresponds, has hydrogen-like properties. The distances between the lines in the spectrum are in good agreement with those predicted by effective-mass theory. The appearance of Fano resonance in the continuum region in addition to intracenter transitions of the defect was detected. The defect found is identified as SnV{sub 2}{sup 0}Ga. The binding energy for the ground state of the SnV{sub 2}{sup 0}Ga centers has been estimated.

  10. 125Te NMR chemical-shift trends in PbTeGeTe and PbTeSnTe alloys

    SciTech Connect (OSTI)

    Njegic, Bosiljka; Levin, Evgenii M.; Schmidt-Rohr, Klaus

    2013-10-08

    Complex tellurides, such as doped PbTe, GeTe, and their alloys, are among the best thermoelectric materials. Knowledge of the change in 125Te NMR chemical shift due to bonding to dopant or solute atoms is useful for determination of phase composition, peak assignment, and analysis of local bonding. We have measured the 125Te NMR chemical shifts in PbTe-based alloys, Pb1?xGexTe and Pb1?xSnxTe, which have a rocksalt-like structure, and analyzed their trends. For low x, several peaks are resolved in the 22-kHz MAS 125Te NMR spectra. A simple linear trend in chemical shifts with the number of Pb neighbors is observed. No evidence of a proposed ferroelectric displacement of Ge atoms in a cubic PbTe matrix is detected at low Ge concentrations. The observed chemical shift trends are compared with the results of DFT calculations, which confirm the linear dependence on the composition of the first-neighbor shell. The data enable determination of the composition of various phases in multiphase telluride materials. They also provide estimates of the 125Te chemical shifts of GeTe and SnTe (+970 and +400150 ppm, respectively, from PbTe), which are otherwise difficult to access due to Knight shifts of many hundreds of ppm in neat GeTe and SnTe.

  11. Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration

    SciTech Connect (OSTI)

    Li, Haofeng; Brouillet, Jeremy; Wang, Xiaoxin; Liu, Jifeng

    2014-11-17

    We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450?C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18??m long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.

  12. Thermoelectric and microstructural properties of Pb{sub 0.9-x}Sn{sub 0.1}Ge{sub x}Te compounds prepared by spinodal decomposition

    SciTech Connect (OSTI)

    Sondergaard, M.; Christensen, M.; Johnsen, S. [Center for Energy Materials, Department of Chemistry and iNANO, Aarhus University, DK-8000 Aarhus C (Denmark); Stiewe, C.; Dasgupta, T.; Mueller, E. [German Aerospace Center (DLR), Linder Hoehe, DE-51147 Cologne (Germany); Iversen, B.B., E-mail: bo@chem.au.d [Center for Energy Materials, Department of Chemistry and iNANO, Aarhus University, DK-8000 Aarhus C (Denmark)

    2011-05-15

    Three samples of Pb{sub 0.9-x}Sn{sub 0.1}Ge{sub x}Te with x=0.25, 0.35, 0.6 were prepared by heating the mixtures above the melting point of the constituent elements followed by quenching in water. The x=0.6 sample is close to the center of the immiscibility region, while the x=0.25 and 0.35 samples are in the Pb rich region inside the spinodal miscibility gap. Microstructural investigations using Powder X-ray Diffraction, Scanning Electron Microscopy and Energy Dispersive X-ray Spectroscopy revealed both GeTe-rich and PbTe-rich phases. The samples were uniaxially hot pressed and the thermoelectric properties were characterized in the temperature range 2-400 K using a commercial apparatus and from 300 to 650 K with a custom designed setup. The best sample (x=0.6) reached zT{approx}0.6 at 650 K, while the x=0.25 and 0.35 samples showed thermal instability at elevated temperatures. -- Graphical abstract: Spinodal decomposition in the GeTe-SnTe-PbTe system demonstrated by SEM and EXS images. Display Omitted Highlights: {yields} Investigation of Pb-rich part of the spinodal miscibility gap in PbTe-SnTe-GeTe. {yields} zT=0.6 at 650 K reproduced for Pb{sub 0.3}Sn{sub 0.1}Ge{sub 0.6}Te. {yields} Pb-rich phases shown to be thermally instable. {yields} Thermoelectric property characterization at low and high temperature. {yields} Microstructural investigations using PXRD, SEM, EDX and PSM.

  13. D{sub 3h} [A-CE{sub 3}-A]{sup −} (E = Al and Ga, A = Si, Ge, Sn, and Pb): A new class of hexatomic mono-anionic species with trigonal bipyramidal carbon

    SciTech Connect (OSTI)

    Wu, Yan-Bo E-mail: zxwang@ucas.ac.cn; Li, Yan-Qin; Bai, Hui; Lu, Hai-Gang; Li, Si-Dian; Zhai, Hua-Jin; Wang, Zhi-Xiang E-mail: zxwang@ucas.ac.cn

    2014-03-14

    The non-classical trigonal bipyramidal carbon (TBPC) arrangement generally exists as transition states (TSs) in nucleophilic bimolecular substitution (S{sub N}2) reactions. Nevertheless, chemists have been curious about whether such a carbon bonding could be stable in equilibrium structures for decades. As the TBPC arrangement was normally realized as cationic species theoretically and experimentally, only one anionic example ([At-C(CN){sub 3}-At]{sup −}) was computationally devised. Herein, we report the design of a new class of anionic TBPC species by using the strategy similar to that for stabilizing the non-classical planar hypercoordinate carbon. When electron deficient Al and Ga were used as the equatorial ligands, eight D{sub 3h} [A-CE{sub 3}-A]{sup −} (E = Al and Ga, A = Si, Ge, Sn, and Pb) TBPC structures were found to be the energy minima rather than TSs at both the B3LYP and MP2 levels. Remarkably, the energetic results at the CCSD(T) optimization level further identify [Ge-CAl{sub 3}-Ge]{sup −} and [Sn-CGa{sub 3}-Sn]{sup −} even to be the global minima and [Si-CAl{sub 3}-Si]{sup −} and [Ge-CGa{sub 3}-Ge]{sup −} to be the local minima, only slightly higher than their global minima. The electronic structure analyses reveal that the substantial ionic C–E bonding, the peripheral E–A covalent bonding, and the axial mc-2e (multi center-two electrons) bonding play roles in stabilizing these TBPC structures. The structural simplicity and the high thermodynamic stability suggest that some of these species may be generated and captured in the gas phase. Furthermore, as mono-anionic species, their first vertical detachment energies are differentiable from those of their nearest isomers, which would facilitate their characterization via experiments such as the negative ion photoelectron spectroscopy.

  14. Phase stabilities of pyrite-related MTCh compounds (M=Ni, Pd, Pt; T=Si, Ge, Sn, Pb; Ch=S, Se, Te): A systematic DFT study

    SciTech Connect (OSTI)

    Bachhuber, Frederik; Krach, Alexander; Furtner, Andrea; Söhnel, Tilo; Peter, Philipp; Rothballer, Jan; Weihrich, Richard

    2015-03-15

    Pyrite-type and related systems appear for a wide range of binary and ternary combinations of transition metals and main group elements that form Zintl type dumbbell anion units. Those representatives with 20 valence electrons exhibit an extraordinary structural flexibility and interesting properties as low-gap semiconductors or thermoelectric and electrode materials. This work is devoted to the systematic exploration of novel compounds within the class of MTCh compounds (M=Ni, Pd, Pt; T=Si, Ge, Sn, Pb; Ch=S, Se, Te) by means of density functional calculations. Their preferred structures are predicted from an extended scheme of colored pyrites and marcasites. To determine their stabilities, competing binary MT{sub 2} and MCh{sub 2} boundary phases are taken into account as well as ternary M{sub 3}T{sub 2}Ch{sub 2} and M{sub 2}T{sub 3}Ch{sub 3} systems. Recently established stability diagrams are presented to account for MTCh ordering phenomena with a focus on a not-yet-reported ordering variant of the NiAs{sub 2} type. Due to the good agreement with experimental data available for several PtTCh systems, the predictions for the residual systems are considered sufficiently accurate. - Graphical abstract: Compositional and structural stability of MTCh compounds is investigated from first principle calculations. A conceptional approach is presented to study and predict novel stable and metastable compounds and structures of low gap semiconductors with TCh dumbbell units that are isoelectronic and structurally related to pyrite (FeS{sub 2}). - Highlights: • Study of compositional stability of MTCh vs. M{sub 3}T{sub 2}Ch{sub 2} and M{sub 2}T{sub 3}Ch{sub 3} compounds. • Study of structural stability of known and novel MTCh compounds. • Prediction of novel stable and metastable structures and compounds isoelectronic to pyrite, FeS{sub 2}.

  15. Local density functional calculations of the electronic structures of the intermetallic systems U{sub 2}Fe{sub 2}Sn and UFe{sub 2}Ge{sub 2}

    SciTech Connect (OSTI)

    Matar, S.F.; Chevalier, B.; Etourneau, J.; Eyert, V.

    1997-02-05

    The electronic structures of U{sub 2}Fe{sub 2}Sn and UFe{sub 2}Ge{sub 2} are self-consistently calculated within the local density functional theory using the augmented spherical wave (ASW) method. Calculations are scalar relativistic. The experimentally observed Pauli paramagnetic behavior of the two systems is accounted for and the influence of hybridization between the different l-states on the chemical bonding is discussed from the site-projected densities of states (DOS) as well as from the modulation of the DOS by the sign and magnitude of the overlap integral, i.e., with the so-called COOP. From this, we propose a mechanism for the evolution of bonding within the series to which the two compounds belong. 12 refs., 3 figs.

  16. Connecting | GE Global Research

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    Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

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    ... Last week, I visited General Electric Company's (NYSE:GE) ... site and remains home to some of GE's brightest ... said the building alone carried a 150 million bill. ...

  18. Electronic band structure trends of perovskite halides: Beyond Pb and Sn to

    Office of Scientific and Technical Information (OSTI)

    Ge and Si (Journal Article) | DOE PAGES Electronic band structure trends of perovskite halides: Beyond Pb and Sn to Ge and Si This content will become publicly available on May 23, 2017 « Prev Next » Title: Electronic band structure trends of perovskite halides: Beyond Pb and Sn to Ge and Si Authors: Huang, Ling-yi ; Lambrecht, Walter R. L. Publication Date: 2016-05-23 OSTI Identifier: 1254217 Grant/Contract Number: SC0008933 Type: Publisher's Accepted Manuscript Journal Name: Physical

  19. Electronic band structure trends of perovskite halides: Beyond Pb and Sn to

    Office of Scientific and Technical Information (OSTI)

    Ge and Si (Journal Article) | SciTech Connect Electronic band structure trends of perovskite halides: Beyond Pb and Sn to Ge and Si Citation Details In-Document Search This content will become publicly available on May 23, 2017 Title: Electronic band structure trends of perovskite halides: Beyond Pb and Sn to Ge and Si Authors: Huang, Ling-yi ; Lambrecht, Walter R. L. Publication Date: 2016-05-23 OSTI Identifier: 1254217 Grant/Contract Number: SC0008933 Type: Publisher's Accepted Manuscript

  20. Building | GE Global Research

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    how we work across supply chains. By... Read More What is the GE store? Mark Little, CTO & Head of Global Research at GE, describes what the GE Store means and why it's...

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    1800 Cai Lun Road, Zhangjiang High-Tech Park, Pudong, Shanghai, 201203, China Joey Yang +86 21 38773407 joey.yang@ge.com Communications and Public Relations GE Global...

  2. GE Researcher Discusses Leadership | GE Global Research

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    GE Partners with Lab on Ultrasonic Clothes Dryer GE Partners with Lab on Ultrasonic Clothes Dryer Addthis Description This video tells how a partnership between Oak Ridge National Laboratory and GE Appliances--with support from the Office of Energy Efficiency and Renewable Energy's (EERE's) Building Technologies Office-is changing the way Americans do laundry with their ultrasonic drying technology that uses vibrations, not heat, to dry fabric. Text Version This is going to be a game-changing

  3. GE Capital Partnership | GE Global Research

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    Global Research and GE Capital: Middle Market Collaboration Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Global Research and GE Capital: Middle Market Collaboration In 2013, a partnering initiative between Global Research and GE Capital resulted in dozens of middle market companies collaborating with Global Research

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    introduces a whole new way of inventing. We teamed up with Quirky, the social product development company, to give everyday inventors access to GE's patents to inspire new...

  5. GE Global Research Leadership | GE Global Research

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    Steam Turbine, Generator and Controls ... service for GE Wind Energy, general manager of controls and power electronics and ... Care Award by Consumer Health World, USA ...

  6. Ars Technica Visits GE's China Technology Center | GE Global...

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    Technica visits GE's China Technology Center Click to email this to a friend (Opens in new ... Ars Technica visits GE's China Technology Center Ars Technica visited GE's China ...

  7. Proteus-SN user manual

    SciTech Connect (OSTI)

    Shemon, Emily R.; Smith, Micheal A.; Lee, Changho

    2015-07-31

    This user manual describes how to set up a neutron transport simulation with the PROTEUS-SN code. A companion methodology manual describes the theory and algorithms within PROTEUS-SN.

  8. The GE Store

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    GE Store for Technology GE Global Research CS12005-02_GEstoreTechBook_R13.indd 1 3/10/15 8:45 AM Contents 2 Materials 5 Manufacturing 10 Industrial Internet 15 Energy CS12005-02_GEstoreTechBook_R13.indd 2 3/10/15 8:45 AM Welcome to GE Global Research, also known as the GE Store for Technology. Across our global network of nine technology centers, we have more than 3,600 of the world's best scientists and engineers driving advanced technologies for all of GE's industrial businesses. They are part

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  12. GE's Digital Marketplace to Revolutionize Manufacturing | GE...

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  13. Powering | GE Global Research

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    National Laboratory (Berkeley Lab) are exploring a possible key to energy storage for electric... Read More GE's Dual Piezoelectric Cooling Jets (DCJ) Are Cool and Quiet...

  14. The low-temperature form of calcium gold stannide, CaAuSn

    SciTech Connect (OSTI)

    Lin, Qisheng; Corbett, John D.

    2014-07-19

    The EuAuGe-type CaAuSn phase has been synthesized and single-crystal X-ray diffraction analysis reveals that it has an orthorhombic symmetry (space group Imm2), with a = 4.5261 (7) , b = 7.1356 (11) and c = 7.8147 (11) . The structure features puckered layers that are connected by homoatomic Au-Au and Sn-Sn interlayer bonds. This structure is one of the two parent structures of its high-temperature polymorph (ca 873 K), which is an intergrowth structure of the EuAuGe- and SrMgSi-type structures in a 2:3 ratio.

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  1. Thermal properties of UPdSn and UCuSn

    SciTech Connect (OSTI)

    Kawanaka, H. [Electrotechnical Lab., Tsukuba (Japan). Electron Physics Section; Nakotte, H. [Electrotechnical Lab., Tsukuba (Japan). Electron Physics Section]|[Los Alamos National Lab., NM (United States). Manual Lujan Jr. Neutron Scattering Center; Brueck, E.; Prokes, K.; Kim-Ngan, N.H. [Univ. of Amsterdam (Netherlands). Van der Waals-Zeeman Inst.; Takabatake, T.; Fujii, H. [Hiroshima Univ., Highashi-Hiroshima (Japan). Faculty of Integrated Arts and Sciences; Sakurai, J. [Toyama Univ. (Japan). Faculty of Science

    1996-09-01

    The authors report on the specific-heat and the thermopower of UPdSn and UCuSn, both of which order antiferromagnetically at low temperatures. Both compounds show similar behavior in the specific heat, and the large magnetic-entropy changes around T{sub N} are evidence for a large degree of 5f-electron localizations. The thermopower, on the other hand, behaves very different in the two compounds. While prominent features are seen in the temperature dependence of the thermopower of UCuSn, only weak changes are observed for UPdSn. This may indicate that, for these compounds, the thermopower response is due to mechanisms other than purely magnetic ones.

  2. GE leads the way in photonics research | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE continues leading role in photonics industry - from LED to digital x-ray Click to email ... GE continues leading role in photonics industry - from LED to digital x-ray Danielle ...

  3. GE Hitachi Nuclear Energy | Open Energy Information

    Open Energy Info (EERE)

    GE Hitachi Nuclear Energy Jump to: navigation, search Name: GE Hitachi Nuclear Energy Place: Wilmington, North Carolina Zip: 28402 Sector: Efficiency, Services Product: GE Hitachi...

  4. New Medical Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  5. New Transportation Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  6. New Energy Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  7. Laser Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laser Manufacturing at GE Global Research Click to email this to a friend (Opens in new ... Laser Manufacturing at GE Global Research Learn how laser sintering, an additive laser ...

  8. GE | OpenEI Community

    Open Energy Info (EERE)

    by Jessi3bl(15) Member 16 December, 2012 - 19:18 GE, Clean Energy Fuels Partner to Expand Natural Gas Highway clean energy Clean Energy Fuels energy Environment Fuel GE Innovation...

  9. Chevron, GE form Technology Alliance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Chevron, GE form Technology Alliance February 3, 2014 HOUSTON, TX, Feb. 3, 2014-Chevron Energy Technology Company and GE Oil & Gas announced today the creation of the Chevron GE Technology Alliance, which will develop and commercialize valuable technologies to solve critical needs for the oil and gas industry. The Alliance builds upon a current collaboration on flow analysis technology for oil and gas wells. It will leverage research and development from GE's newest Global Research Center,

  10. Moving | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Moving We're always working on planes, trains and automobiles-and specialized ways to move people and products efficiently and sustainably. Home > Impact > Moving Green Skies of Brazil Improves Airspace Efficiency It's not uncommon for planes approaching some of Brazil's busiest airports to travel miles out of the way while pilots wait... Read More » Reducing Emissions in the New Tier 4 Locomotive GE Global Research Internal Combustion lab manager Omowoleola "Wole" Akinyemi

  11. GE's Digital Marketplace to Revolutionize Manufacturing | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research GE's Digital Marketplace to Revolutionize Manufacturing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's Digital Marketplace to Revolutionize Manufacturing GE will lead an effort to create an online community for manufacturing collaboration and data analysis The open source project will build the

  12. Israel: A Source of Innovation for GE |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Israel: A Source of Innovation for GE Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Israel: A Source of Innovation for GE Oded Meirav 2014.05.22 Unlike other research organizations within GE Global Research, my team is not tasked with developing technology for GE's businesses. Instead...we hunt! Our job is to identify

  13. GE Opens Research Center in Saudi Arabia | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE's US1 billion investment in Saudi Arabia creates a path for new initiatives in localization, technology innovation and manufacturing to drive country's digital transformation...

  14. Purdue, GE Collaborate On Advanced Manufacturing | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... In addition to DMDI, Purdue is involved in providing skills and training support for the new jet engine assembly facility GE Aviation is building in neighboring Lafayette, Indiana. ...

  15. Chevron, GE form Technology Alliance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Chevron, GE form Technology Alliance Chevron, GE form Technology Alliance The Chevron GE Technology Alliance will develop and commercialize valuable technologies to solve critical needs for the oil and gas industry. February 3, 2014 Los Alamos National Laboratory sits on top of a once-remote mesa in northern New Mexico with the Jemez mountains as a backdrop to research and innovation covering multi-disciplines from bioscience, sustainable energy sources, to plasma physics and new materials. Los

  16. Magnetic Refrigeration | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Johnson, a materials scientist and project leader on GE's magnetic refrigeration project. ... materials would further improve the competitiveness of magnetic refrigeration technology. ...

  17. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Predictivity(tm) Industrial Internet Solutions Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Predictivity(tm) Industrial Internet Solutions As a key player in GE's commitment to advance the Industrial Internet, the GE Software Center is at work helping industrial organizations use data, analytics, data

  18. Flying Cars | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe ...

  19. GE Innovation and Manufacturing in Europe | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovation and Manufacturing in Europe Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Innovation and Manufacturing in Europe Click the image below to see how GE is at work across Europe to change the face of manufacturing. EU graphic You Might Also Like 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN »

  20. GE Key Partner in Innovation Institutes | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Is Key Partner in Manufacturing Innovation Institutes Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Is Key Partner in Manufacturing Innovation Institutes GE Global Research 2014.02.25 President Obama today announced two new manufacturing innovation institutes. One is focused on digital manufacturing and design

  1. GE Researchers Tackle Three Unimpossible Missions | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Unimpossible Missions: GE researchers prove nothing is impossible Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Unimpossible Missions: GE researchers prove nothing is impossible A team of GE researchers came together over the course of several months to tackle three seemingly impossible missions.

  2. GE Partners on Microgrid Project | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, Utility, Government, and Academia Partner on Microgrid Project Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, Utility, Government, and Academia Partner on Microgrid Project GE Awarded a $1.2M Department of Energy Grant to Design Technology to Keep Electricity Flowing after Catastrophic Weather Events NISKAYUNA,

  3. GE Scientists Experiment With Texas BBQ | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE BBQ Center is open, innovating and serving some delicious BBQ Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The GE BBQ Center is open, innovating and serving some delicious BBQ Lynn DeRose 2015.03.15 This is the third in a five-part series of dispatches from GE's Science of Barbecue Experience at South by

  4. Toolkit Model for SN-03 Final Proposal (ratecases/sn03)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Model SN CRAC ToolKit Model Variable, Flat SN CRAC, 80% TPP (TK187SN-03FS3BPA-PropVariableFlatSNN24-Jun-03.xls, 3.1 MB) Data Input Files (required to run the above...

  5. New Energy Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today presented new research findings on its nanotextured anti-icing surfaces. In ...

  6. Brilliant Factories Could Revolutionize Manufacturing | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    materials, software, and analytics to commercialization, process, and business model best practices. The GE Store allows GE to leapfrog industries, to drive innovation,...

  7. GE Solar Power | Open Energy Information

    Open Energy Info (EERE)

    GE Solar Power Jump to: navigation, search Name: GE Solar Power Place: Delaware Sector: Solar Product: String representation "The solar busin ... s in July 2004." is too long....

  8. GE Global Research in Niskayuna, NY

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Niskayuna, USA Niskayuna, USA GE Global Research headquarters is the nerve center for innovative work across technologies and collaboration across GE businesses. Click to email...

  9. GE Wind Energy Germany | Open Energy Information

    Open Energy Info (EERE)

    Energy Germany Jump to: navigation, search Name: GE Wind Energy Germany Place: Salzbergen, Germany Zip: 48499 Sector: Wind energy Product: Germany-based, division of GE Wind Energy...

  10. GE Researcher Explores Science Behind Movie Chappie | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  11. Working at GE Global Research | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    products and working on lots of different things, and I was convinced that this ideal job didn't exist. I came to find out about the Sensor & Signal Analytics Lab at GE Global...

  12. GE Scientists Experiment With Texas BBQ | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE BBQ Center is open, innovating and serving some delicious BBQ Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens ...

  13. GE Develops High Water Recovery Technology in China | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Develops High Water Recovery Technology in China Click to email this to a friend (Opens in ... GE Develops High Water Recovery Technology in China Technology aims to boost development ...

  14. Technical Education | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technical Education at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Technical Education at GE Global Research Mark Vermilyea describes the Edison Engineering Development Program (EEDP) and its "A Course," which features lectures on Global Research work in GE's major business units,

  15. TEE-0077- In the Matter of GE Appliances & Lighting

    Broader source: Energy.gov [DOE]

    The Decision and Order considers and Application for Exception filed by GE Appliances & Lighting (GE)

  16. SN-03 Rate Case Workshops (rates/meetings)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials Related Link: SN-03 Power Rate Case May 1 & 13, 2003 - Debt and Liquidity Strategies workshops (on BPA Corporate web site) March 27, 2003 - SN CRAC Prescheduling...

  17. MEMS Relays | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Exhibition Focuses on Materials, Surfaces and Interfaces 2-3-11-v Carousolar Uses Solar Power for Fun 2-2-6-v GE Scientists Demonstrate Promising Anti-icing Nano Surfaces

  18. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Predictivity(tm) Industrial Internet Solutions Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) ...

  19. Airline Efficiency | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    reduce their operating costs and environmental footprint. You Might Also Like IMG0475 Innovation 247: We're Always Open direct write2square The GE Store for Technology is...

  20. GE Researcher Explores Science Behind Movie Chappie | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic The film "Chappie" is the story of a Police droid, reprogrammed to become

  1. GE Opens Research Center in Saudi Arabia | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE's US$1 billion investment in Saudi Arabia creates a path for new initiatives in localization, technology innovation and manufacturing to drive country's digital transformation by 2020 Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's US$1 billion investment in Saudi Arabia creates a path for new initiatives in

  2. 12 GeV! | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GeV! 12 GeV! December 21, 2015 Our upgrade project is called the 12 GeV CEBAF Upgrade Project. At the time CD-4A was achieved, we demonstrated 2.2 GeV per pass. This was 12 GeV! Well, not quite. In fact with more than one pass, we limited ourselves to a little more than 6 GeV with three passes, and to 10.5 GeV with 5.5 passes. It was not felt to be prudent to demand 12 GeV out of the machine immediately after turn on. Operations in the spring of 2015 at high energy, ~10.5 GeV, came to a

  3. Sodium Battery | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sodium Battery Technology Improves Performance and Safety Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Sodium Battery Technology Improves Performance and Safety Imagination and innovation have always been in GE's DNA. While exploring the expanded use of hybrid power in the rail, mining and marine industries, GE began

  4. Safety Net (SN) CRAC (rates/adjustments)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Oregon. To participate by telephone, please call Cynthia Jones (503) 230-5459 or Cain Bloomer (503-230-7443) in advance of the workshop. August 28, 2003 - Final FB and SN...

  5. Northern Colorado Wind Energy Center (GE) | Open Energy Information

    Open Energy Info (EERE)

    GE) Jump to: navigation, search Name Northern Colorado Wind Energy Center (GE) Facility Northern Colorado Wind Energy Center (GE) Sector Wind energy Facility Type Commercial Scale...

  6. Milford Wind Corridor Phase I (GE Energy) | Open Energy Information

    Open Energy Info (EERE)

    I (GE Energy) Jump to: navigation, search Name Milford Wind Corridor Phase I (GE Energy) Facility Milford Wind Corridor Phase I (GE Energy) Sector Wind energy Facility Type...

  7. Advances in Nb3Sn Performance

    SciTech Connect (OSTI)

    Godeke, Arno

    2008-05-19

    Nb{sub 3}Sn wires with non-Cu critical current densities (J{sub c}) that surpass 3 kAmm{sup -2} at 12 T and 4.2 K are commercially available in piece lengths longer than 10 km. Accelerator-type magnets that utilize these conductors have achieved record magnetic fields. This article summarizes key developments in the last decade that have led to these significant improvements in the performance of Nb{sub 3}Sn wires.

  8. What Is MEMS? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials, Surfaces and Interfaces 2-2-6-v GE Scientists Demonstrate Promising Anti-icing Nano Surfaces 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN ...

  9. GE Shenhua JV | Open Energy Information

    Open Energy Info (EERE)

    Name: GE & Shenhua JV Place: China Product: China based industrial coal gasification joint venture. References: GE & Shenhua JV1 This article is a stub. You can help OpenEI...

  10. GE Wind Energy | Open Energy Information

    Open Energy Info (EERE)

    Energy Jump to: navigation, search Name: GE Wind Energy Place: Atlanta, Georgia Zip: GA 30339 Sector: Wind energy Product: GE's wind energy division, formed as a result of the...

  11. GE Scientist Stephan Biller Discusses the Industrial Internet | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Manufacturing Scientist Stephan Biller Discusses the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Manufacturing Scientist Stephan Biller Discusses the Industrial Internet Stephan Biller, Chief Manufacturing Scientist at GE Global Research, talked with the Farstuff Podcast about the

  12. Ferromagnetism of Fe3Sn and alloys

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sales, Brian C.; Saparov, Bayrammurad; McGuire, Michael A.; Singh, David J.; Parker, David S.

    2014-11-12

    Hexagonal Fe3Sn has many of the desirable properties for a new permanent magnet phase with a Curie temperature of 725 K, a saturation moment of 1.18 MA/m. and anisotropy energy, K1 of 1.8 MJ/m3. However, contrary to earlier experimental reports, we found both experimentally and theoretically that the easy magnetic axis lies in the hexagonal plane, which is undesirable for a permanent magnet material. One possibility for changing the easy axis direction is through alloying. We used first principles calculations to investigate the effect of elemental substitutions. The calculations showed that substitution on the Sn site has the potential tomore » switch the easy axis direction. Transition metal substitutions with Co or Mn do not have this effect. We attempted synthesis of a number of these alloys and found results in accord with the theoretical predictions for those that were formed. However, the alloys that could be readily made all showed an in-plane easy axis. The electronic structure of Fe3Sn is reported, as are some are magnetic and structural properties for the Fe3Sn2, and Fe5Sn3 compounds, which could be prepared as mm-sized single crystals.« less

  13. Thermal conductivity of bulk and nanowire Mg₂SixSn1–x alloys from first principles

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Wu; Lindsay, L.; Broido, D. A.; Stewart, Derek A.; Mingo, Natalio

    2012-11-29

    The lattice thermal conductivity (κ) of the thermoelectric materials, Mg₂Si, Mg₂Sn, and their alloys, are calculated for bulk and nanowires, without adjustable parameters. We find good agreement with bulk experimental results. For large nanowire diameters, size effects are stronger for the alloy than for the pure compounds. For example, in 200 nm diameter nanowires κ is lower than its bulk value by 30%, 20%, and 20% for Mg₂Si₀.₆Sn₀.₄, Mg₂Si, and Mg₂Sn, respectively. For nanowires less than 20 nm thick, the relative decrease surpasses 50%, and it becomes larger in the pure compounds than in the alloy. At room temperature, κmore » of Mg₂SixSn1–x is less sensitive to nanostructuring size effects than SixGe1–x, but more sensitive than PbTexSe1–x. This suggests that further improvement of Mg₂SixSn1–x as a nontoxic thermoelectric may be possible.« less

  14. GE PowerPoint Template

    U.S. Energy Information Administration (EIA) Indexed Site

    Power of Networks in an Age of Gas Peter Evans, PhD Director Global Strategy & Analytics General Electric 2013 EIA Energy Conference June 17-18, 2013 Washington, DC 2 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Sources of competitive advantage Thomas Edison - GE Founder Natural endowments Creative endowments The U.S. is rich in both 3 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Physical and digital infrastructure Advantage of

  15. Aluminum-stabilized NB3SN superconductor

    DOE Patents [OSTI]

    Scanlan, Ronald M.

    1988-01-01

    An aluminum-stabilized Nb.sub.3 Sn superconductor and process for producing same, utilizing ultrapure aluminum. Ductile components are co-drawn with aluminum to produce a conductor suitable for winding magnets. After winding, the conductor is heated to convert it to the brittle Nb.sub.3 Sn superconductor phase, using a temperature high enough to perform the transformation but still below the melting point of the aluminum. This results in reaction of substantially all of the niobium, while providing stabilization and react-in-place features which are beneficial in the fabrication of magnets utilizing superconducting materials.

  16. GE leads the way in photonics research | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    continues leading role in photonics industry - from LED to digital x-ray Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE continues leading role in photonics industry - from LED to digital x-ray Danielle Merfeld, Ph.D. 2015.07.27 Vice President Joseph Biden joined New York Gov. Andrew Cuomo in Rochester, New York

  17. Finding Engineering Inspiration at GE | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Getting inspired at the intersection of innovation and creativity Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Getting inspired at the intersection of innovation and creativity Alice Pinney 2015.05.11 Interning at a place where innovation meets creativity has been a dream come true for me. Being an intern at GE

  18. GE's BBQ Science Experiments Produce Results |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    BBQ Science Experiments Reveal Winning Rack of Ribs Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) BBQ Science Experiments Reveal Winning Rack of Ribs Lynn DeRose 2015.03.16 This is the fourth in a five-part series of dispatches from GE's Science of Barbecue Experience at South by Southwest. Our state-of-the-art

  19. Crystal growth and annealing study of fragile, non-bulk superconductivity in YFe2Ge 2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kim, H.; Ran, S.; Mun, E. D.; Hodovanets, H.; Tanatar, M. A.; Prozorov, R.; Bud’ko, S. L.; Canfield, P. C.

    2015-02-05

    In this study, we investigated the occurrence and nature of superconductivity in single crystals of YFe2Ge2 grown out of Sn flux by employing X-ray diffraction, electrical resistivity and specific heat measurements. We found that the residual resistivity ratio (RRR) of single crystals can be greatly improved, reaching as high as ~60, by decanting the crystals from the molten Sn at ~350°C and/or by annealing at temperatures between 550°C and 600°C. We found that the samples with RRR ≳ 34 showed resistive signatures of superconductivity with the onset of the superconducting transition Tc ≈ 1.4K. RRR values vary between 35 andmore » 65 with, on average, no systematic change in value Tc, indicating that the systematic changes in RRR do not lead to comparable changes in Tc. Specific heat measurements on samples that showed the clear resistive signatures of a superconducting transition did not show any signature of a superconducting phase transition, which suggests that the superconductivity observed in this compound is either some sort of filamentary, strain-stabilized superconductivity associated with small amounts of stressed YFe2Ge2 (perhaps at twin boundaries or dislocations) or is a second crystallographic phase that is present at level below detection capability of conventional powder X-ray techniques.« less

  20. Thermal conductivity of bulk and nanowire Mg?SixSn1x alloys from first principles

    SciTech Connect (OSTI)

    Li, Wu; Lindsay, L.; Broido, D. A.; Stewart, Derek A.; Mingo, Natalio

    2012-11-29

    The lattice thermal conductivity (?) of the thermoelectric materials, Mg?Si, Mg?Sn, and their alloys, are calculated for bulk and nanowires, without adjustable parameters. We find good agreement with bulk experimental results. For large nanowire diameters, size effects are stronger for the alloy than for the pure compounds. For example, in 200 nm diameter nanowires ? is lower than its bulk value by 30%, 20%, and 20% for Mg?Si?.?Sn?.?, Mg?Si, and Mg?Sn, respectively. For nanowires less than 20 nm thick, the relative decrease surpasses 50%, and it becomes larger in the pure compounds than in the alloy. At room temperature, ? of Mg?SixSn1x is less sensitive to nanostructuring size effects than SixGe1x, but more sensitive than PbTexSe1x. This suggests that further improvement of Mg?SixSn1x as a nontoxic thermoelectric may be possible.

  1. User Experience Testing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Software's Design and User Experience Studio Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Software's Design and User Experience Studio Looking to the future, GE created the Design and Experience Studio dedicated to developing clean, delightful, understandable, and actionable software experiences for GE customers,

  2. New Medical Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Healthcare We're making healthcare accessible for people around the globe, increasing quality of care and expanding medical treatment boundaries. Home > Innovation > Healthcare GE Unveils High-Tech Superhero, GENIUS MAN Created on earth to inspire the next generation of scientists and engineers, a team of GE researchers have created a comic... Read More » The Dirt on the Cleanroom In this short video, take a look inside the GE Global Research cleanroom and meet the team working in this

  3. GE Announces Vic Abate as New Chief Technology Officer | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and create next." Abate will become only the 10th leader in GE Global Research's 115-year history. As Chief Technology Officer, Abate will oversee GE's nine global research center...

  4. Joseph Vinciquerra | Inventors | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Dynamics of Ice Nucleation on Water Repellent Surfaces GE Scientists Demonstrate Promising Anti-icing Nano Surfaces Influences of Friction, Geometric Nonlinearities, and ...

  5. GE Global Research in Shanghai, China

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shanghai, China Shanghai, China GE's commercial and industrial history meets challenges posed by China's rapid growth to produce work reflecting the advancing world. Click to email ...

  6. Work & Life at Shanghai | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    This community creates a cross-business platform for GE China technologists to enhance ... These include the latest In China for China efforts, as well as product demonstrations, ...

  7. Big Data Analysis | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Software We're blending data, analytics and computing know-how into algorithms and programs that drive business and technology forward. Home > Innovation > Software GE Software's ...

  8. New Transportation Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    jet Read More Dual Fuel Locomotive Is Friendly to the Environment Inside GE's multimillion dollar single-cell test rig, scientists are working on advanced combustion and engine ...

  9. GE Global Research in Oklahoma City

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Oklahoma City, USA Oklahoma City, USA GE's first sector-specific global research center is dedicated to developing and accelerating innovative oil and gas technologies. Click to ...

  10. 3D Printed Toy | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Scientists at GE Global Research get into the holiday spirit by bringing high-tech additive manufacturing techniques to Christmas tree ornaments. You Might Also Like...

  11. Disclosures, Disclaimers and Policies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to PHS-funded research Equal Employment Opportunity Plans Persons wishing to review GE Global Reasearch's EEOP should contact the GEGR Recruiting Manager: Megan Magee, GRC...

  12. Zero Liquid Discharge Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Purifies Water GE's Reverse Osmosis (RO) Membrane technology addresses industrial waste water treatment and recycling needs, purifying water for cooling, boilers, and general...

  13. Stump the Scientist | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    > Stump the Scientist Behind the Scenes with Chief Scientist Jim Bray Watch the Video Happy Pi Day from GE Global Research Watch the Video Ready to Stump the...

  14. GE Global Research in Bangalore, India

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    toughest healthcare challenges direct write2square The GE Store for Technology is Open for Business IMG0475 Innovation 247: We're Always Open globalconnections300...

  15. Blue Arc Machining | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Small Device, Broad Impact in Power Electronics IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe...

  16. Intelligent Rail Networks | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe ...

  17. Collaborative Military Vehicle Design | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe ...

  18. Industrial Inspection Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Exhibition Focuses on Materials, Surfaces and Interfaces IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe...

  19. Internal Combustion Efficiency | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe...

  20. Modeling of GE Appliances: Final Presentation

    SciTech Connect (OSTI)

    Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

    2013-01-31

    This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

  1. Cedar Creek Wind Farm II (GE) | Open Energy Information

    Open Energy Info (EERE)

    GE) Jump to: navigation, search Name Cedar Creek Wind Farm II (GE) Facility Cedar Creek II (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service...

  2. Passionate Technologists Wanted at ASME Turbo Expo|GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    who want to learn more about GE and its global Research Centers. For this purpose, the Aero & Thermal Systems groups of GE Global Research and representatives from several GE...

  3. Top of the World (GE) | Open Energy Information

    Open Energy Info (EERE)

    GE) Jump to: navigation, search Name Top of the World (GE) Facility Top of the World (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner...

  4. Xergy Ships First Breakthrough Water Heater Compressor to GE...

    Energy Savers [EERE]

    Xergy Ships First Breakthrough Water Heater Compressor to GE Xergy Ships First Breakthrough Water Heater Compressor to GE September 15, 2015 - 3:41pm Addthis Xergy Inc. and GE...

  5. VERY LATE PHOTOMETRY OF SN 2011fe

    SciTech Connect (OSTI)

    Kerzendorf, W. E. [Department of Astronomy and Astrophysics, University of Toronto, 50 Saint George Street, Toronto, ON M5S 3H4 (Canada); Taubenberger, S.; Seitenzahl, I. R.; Ruiter, A. J., E-mail: wkerzendorf@gmail.com [Max-Planck-Institut fr Astrophysik, Karl-Schwarzschild-Strae 1, D-85748 Garching (Germany)

    2014-12-01

    The Type Ia supernova SN 2011fe is one of the closest supernovae of the past decades. Due to its proximity and low dust extinction, this object provides a very rare opportunity to study the extremely late time evolution (>900 days) of thermonuclear supernovae. In this Letter, we present our photometric data of SN 2011fe taken at an unprecedented late epoch of ?930 days with GMOS-N mounted on the Gemini North telescope (g=23.43 0.28, r=24.14 0.14, i=23.91 0.18, and z=23.90 0.17) to study the energy production and retention in the ejecta of SN 2011fe. Together with previous measurements by other groups, our result suggests that the optical supernova light curve can still be explained by the full thermalization of the decay positrons of {sup 56}Co. This is in spite of theoretical predicted effects (e.g., infrared catastrophe, positron escape, and dust) that advocate a substantial energy redistribution and/or loss via various processes that result in a more rapid dimming at these very late epochs.

  6. Computational discovery of ferromagnetic semiconducting single-layer CrSnTe3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhuang, Houlong L.; Xie, Yu; Kent, P. R. C.; Ganesh, P.

    2015-07-06

    Despite many single-layer materials being reported in the past decade, few of them exhibit magnetism. Here we perform first-principles calculations using accurate hybrid density functional methods (HSE06) to predict that single-layer CrSnTe3 (CST) is a ferromagnetic semiconductor, with band gaps of 0.9 and 1.2 eV for the majority and minority spin channels, respectively. We determine the Curie temperature as 170 K, significantly higher than that of single-layer CrSiTe3 (90K) and CrGeTe3 (130 K). This is due to the enhanced ionicity of the Sn-Te bond, which in turn increases the superexchange coupling between the magnetic Cr atoms. We further explore themore » mechanical and dynamical stability and strain response of this single-layer material for possible epitaxial growth. Lastly, our study provides an intuitive approach to understand and design novel single-layer magnetic semiconductors for a wide range of spintronics and energy applications.« less

  7. GE Showcases Industrial Internet Innovations and Promotes Win...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE China Technology Center teams up with Zhangjiang High-tech Management Committee to ... SHANGHAI, Oct. 21 -- The GE China Technology Center presented the newest industrial trends ...

  8. How Will Everything Be Intelligent? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Global Research's Fu Xu, an expert in the Real Time Controls lab at GE's China ... Edition challenge CTCV Innovate in China, Innovate for China shanghai Ars ...

  9. GE Global Research Sourcing External Document & Process Repository...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Global Research Sourcing External Document & Process Repository Home > GE Global Research Sourcing External Document & Process Repository Supplier Integrity Guide Purchase Order...

  10. Scanning Photocurrent Microscopy of Si and Ge nanowires (Conference...

    Office of Scientific and Technical Information (OSTI)

    Conference: Scanning Photocurrent Microscopy of Si and Ge nanowires Citation Details In-Document Search Title: Scanning Photocurrent Microscopy of Si and Ge nanowires You are ...

  11. GE Hybrid Power Generation Systems | Open Energy Information

    Open Energy Info (EERE)

    Name: GE Hybrid Power Generation Systems Place: Georgia Zip: Atlanta Product: Focused on fuel cell stack and system development. References: GE Hybrid Power Generation Systems1...

  12. Process for the manufacture of 117Sn diethylenetriaminepentaacetic acids

    DOE Patents [OSTI]

    Srivastava, Suresh C.; Li, Zizhong; Meinken, George

    2003-01-01

    Novel methods are provided for the manufacture of .sup.117m Sn(Sn.sup.4+) DTPA. The method allows the use of DTPA, a toxic chelating agent, in an approximately 1:1 ratio to .sup.117m Sn(Sn.sup.4+) via either aqueous conditions, or using various organic solvents, such as methylene chloride. A pharmaceutical composition manufactured by the novel method is also provided, as well as methods for treatment of bone tumors and pain associated with bone cancer using the pharmaceutical composition of the invention.

  13. Electrochemical synthesis of Nb3Sn coatings on Cu substrates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Franz, S.; Barzi, E.; Turrioni, D.; Glionna, L.; Bestetti, M.

    2015-09-11

    This study aims at contributing to the development of superconducting Nb3Sn thin films for possible applications, as for instance in superconducting radio frequency (SRF) cavities. The synthesis of Nb-Sn coatings was carried out on copper substrates by electrodeposition from 1-Butyl-3-methylimidazolium chloride (BMIC) ionic liquids containing SnCl2 and NbCl5. Cyclic voltammetric curves were recorded to identify the reduction potentials of Nb and Sn ionic species. Electrodeposition was performed at 40 and 400 mA/cm2 and 130°C. The CV demonstrated that BMIC has a suitable potential window for co-deposition of Nb and Sn. The electrodeposited coatings showed a cubic Nb3Sn phase with (211)more » preferred orientation, a disordered orthorhombic NbSn2 phase and Sn-Cu phases. Film thickness was from 200 to 750 nm. These results suggest that electrodeposition of Nb-Sn coatings on copper substrates could be a suitable route to one day replace the current expensive Nb SRF cavities.« less

  14. Tech Digest July 2013 | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Tech Digest-July 2013 Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Tech Digest-July 2013 Catch up on some of the latest technological developments at GE Global Research. You Might Also Like GE's Brilliant Factory Lab advances digital manufacturing Bringing a Digital Mindset to Manufacturing » ge store2 What is the

  15. Durathon Battery Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Durathon(tm) Battery Helps Power Electric Bus Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's Durathon(tm) Battery Helps Power Electric Bus GE engineer Tim Richter explains how the company's Durathon(tm) batteries fit into the on-board energy management system on a bus at GE's Global Research Center. This

  16. About Additive Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Introducing Additive Manufacturing at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Introducing Additive Manufacturing at GE Global Research Prabhjot Singh, manager of the Additive Manufacturing Lab at GE Global Research, describes the technology used in his lab. You Might Also Like DirectWrite_V

  17. Reflow of AuSnSolder Creates Strong Joints [Local Reflow of AuSn Solder: Relating Strength to Microstructure

    SciTech Connect (OSTI)

    Golosker, Ilya V.; Florando, Jeff N.

    2013-02-01

    Local heating of AuSn solder creates reliable bonds. However, small changes in the heat schedule result in significant changes to bond strength and microstructure.

  18. Yb{sub 5}Ni{sub 4}Sn{sub 10} and Yb{sub 7}Ni{sub 4}Sn{sub 13}: New polar intermetallics with 3D framework structures

    SciTech Connect (OSTI)

    Lei Xiaowu; Sun Zhongming; Li Longhua; Zhong Guohua; Hu Chunli; Mao Jianggao

    2010-04-15

    The title compounds have been obtained by solid state reactions of the corresponding pure elements at high temperature, and structurally characterized by single-crystal X-ray diffraction studies. Yb{sub 5}Ni{sub 4}Sn{sub 10} adopts the Sc{sub 5}Co{sub 4}Si{sub 10} structure type and crystallizes in the tetragonal space group P4/mbm (No. 127) with cell parameters of a=13.785(4) A, c=4.492 (2) A, V=853.7(5) A{sup 3}, and Z=2. Yb{sub 7}Ni{sub 4}Sn{sub 13} is isostructural with Yb{sub 7}Co{sub 4}InGe{sub 12} and crystallizes in the tetragonal space group P4/m (No. 83) with cell parameters of a=11.1429(6) A, c=4.5318(4) A, V=562.69(7) A{sup 3}, and Z=1. Both structures feature three-dimensional (3D) frameworks based on three different types of one-dimensional (1D) channels, which are occupied by the Yb atoms. Electronic structure calculations based on density functional theory (DFT) indicate that both compounds are metallic. These results are in agreement with those from temperature-dependent resistivity and magnetic susceptibility measurements. - Graphical abstract: Two new ytterbium nickel stannides, namely, Yb{sub 5}Ni{sub 4}Sn{sub 10} and Yb{sub 7}Ni{sub 4}Sn{sub 13}, have been synthesized and structurally characterized by single-crystal X-ray diffraction studies. Both their structures feature three-dimensional (3D) frameworks based on three different types of one-dimensional (1D) channels, which are situated by all the Yb atoms. Electronic structure calculations based on density functional theory (DFT) indicate that both compounds are metallic, which are in accordance with the results from temperature-dependent resistivity and magnetic susceptibility measurements.

  19. New Energy Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the innovative ecoROTR wind turbine in a drone GE spent a week flying state-of-the-art drones over and around some of our biggest machines, including the ecoROTR experimental......

  20. Oil & Gas Technology Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Global Research Oil & Gas Technology Center Click to email this to a friend (Opens in new ... GE Global Research Oil & Gas Technology Center Mark Little, SVP and chief technology ...

  1. Metal MEMS Devices | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Exhibition Focuses on Materials, Surfaces and Interfaces 2-3-11-v Carousolar Uses Solar Power for Fun 2-2-6-v GE Scientists Demonstrate Promising Anti-icing Nano Surfaces

  2. High Performance Computing for Manufacturing Parternship | GE...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, US DOE Partner on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency Click to email this to a friend (Opens in new window) Share on ...

  3. membrane-ge | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bench-Scale High-Performance Thin Film Composite Hollow Fiber Membranes for Post-Combustion Carbon Dioxide Capture Project No.: DE-FE0007514 GE Global Research is developing high...

  4. Ideas Are Scary | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for a Career in R&D IsraelTechCenterV Israel: A Source of Innovation for GE NanaVertical Open Innovation and the Middle Market EdisonSummit2-14V Tomorrow's...

  5. GE Global Research Europe in Munich, Germany

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Munich, Germany Munich, Germany With a hand in nearly all GE research fields, this center is a hub of commercial and industrial science and technology innovation. Click to email...

  6. Diagnostics on Demand | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    or enable JavaScript if it is disabled in your browser. GE's lead researcher, David Moore, shows how this paper-based instrument, the size of a deck of playing cards, enables...

  7. Brazil Technology Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1-2-67-v-biofuel-research Biofuel Research at Brazil Center of Excellence IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and ...

  8. Waste to Energy Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Matt Nielsen talks about waste-to-energy technology at the 2012 Invention Convention's Capital District awards ceremony. You Might Also Like 2-2-7-v GE Scientists Unveil Greener,...

  9. Remembering Zach Stum | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Zach was an outstanding engineer, a man who led by example, and an innovative leader. ... Zach joined GE as an engineer in January 2006. Educated at Penn State and Cornell, his ...

  10. Researching NDE, Additive Manufacturing |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for GE Intern Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn ...

  11. Colon Cancer Mapping | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    "With GE's cancer mapping technology, we're enabling cancer to be viewed in ways it ... of proteins and nucleic acids (RNA and DNA) without destroying the integrity of the ...

  12. Advanced Water Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Water We're developing ways to purify and conserve this vital resource. Take a look at our work. Home > Innovation > Water Innovation 247: We're Always Open At GE Global Research, ...

  13. GE Appliances: Order (2010-CE-2113)

    Broader source: Energy.gov [DOE]

    DOE issued an Order after entering into a Compromise Agreement with General Electric Appliances after finding GE Appliances had failed to certify that certain models of dehumidifiers comply with the applicable energy conservation standards.

  14. Game Changing Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Real World in 10 Years primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe a79-v-open-innovation We're Open to Collaboration with Companies Big and Small...

  15. Working in the Cleanroom | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    You Might Also Like 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN IMG0475 Innovation 247: We're Always Open MunichinteriorV 10 Years ON: From the Lab to the...

  16. Kids at Work | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    High-Tech Superhero, GENIUS MAN direct write2square The GE Store for Technology is Open for Business IMG0475 Innovation 247: We're Always Open MunichinteriorV 10...

  17. SN-03 Final Proposal Study and Documentation (ratecases/sn03...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    222 kb 07-09-2003 5. Revenue and Purchased Power Expense Forecast 30 99 kb 07-09-2003 6. Risk Analysis 13 61 kb 07-09-2003 7. SN CRAC Design 31 102 kb 07-09-2003 Documentation...

  18. SN 2006bt: A PERPLEXING, TROUBLESOME, AND POSSIBLY MISLEADING TYPE Ia

    Office of Scientific and Technical Information (OSTI)

    SUPERNOVA (Journal Article) | SciTech Connect SN 2006bt: A PERPLEXING, TROUBLESOME, AND POSSIBLY MISLEADING TYPE Ia SUPERNOVA Citation Details In-Document Search Title: SN 2006bt: A PERPLEXING, TROUBLESOME, AND POSSIBLY MISLEADING TYPE Ia SUPERNOVA SN 2006bt displays characteristics unlike those of any other known Type Ia supernova (SN Ia). We present optical light curves and spectra of SN 2006bt which demonstrate the peculiar nature of this object. SN 2006bt has broad, slowly declining

  19. Robotic Wind Turbine Inspection | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Advances Wind Turbine Inspection Through Robotic Trials Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Advances Wind Turbine Inspection Through Robotic Trials GE Global Research is advancing technology that will make the inspection of wind turbines faster and more reliable for customers. Currently, an inspector

  20. Ultrasound Open Innovation | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Launches Ultrasound Open Innovation Initiative Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Launches Ultrasound Open Innovation Initiative Similar to how independent developers create new applications and find new uses for smart phones, tablets and other intelligent devices, GE is looking to collaborate with a

  1. Immelt: GE Stands at Intersection of Physical, Digital | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Immelt: GE stands at the intersection of the physical, digital Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Immelt: GE stands at the intersection of the physical, digital GE's 2015 Annual Meeting of Shareowners was held Wednesday, April 22, in Oklahoma City, the location of GE's newest Global Research facility.

  2. GE partners with 'Girls Who Code' for summer program | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to 1,200 girls in nine cities nationwide. GE joins other program partners including Accenture, Adobe, AIG, AT&T, Electronic Arts, Facebook, Google, Microsoft, Pixar Animation...

  3. GE, NASA Work to Relaunch Supersonic Air Travel | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Click to email this ... GE Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Awarded 2- year ...

  4. High spin polarization in CoFeMnGe equiatomic quaternary Heusler alloy

    SciTech Connect (OSTI)

    Bainsla, Lakhan; Suresh, K. G.; Nigam, A. K.; Manivel Raja, M.; Varaprasad, B. S. D. Ch. S.; Takahashi, Y. K.; Hono, K.

    2014-11-28

    We report the structure, magnetic property, and spin polarization of CoFeMnGe equiatomic quaternary Heusler alloy. The alloy was found to crystallize in the cubic Heusler structure (prototype LiMgPdSn) with considerable amount of DO{sub 3} disorder. Thermal analysis result indicated the Curie temperature is about 750 K without any other phase transformation up to melting temperature. The magnetization value was close to that predicted by the Slater-Pauling curve. Current spin polarization of P = 0.70 ± 0.01 was deduced using point contact andreev reflection measurements. The temperature dependence of electrical resistivity has been fitted in the temperature range of 5–300 K in order to check for the half metallic behavior. Considering the high spin polarization and Curie temperature, this material appears to be promising for spintronic applications.

  5. Field quality study in Nb(3)Sn accelerator magnets

    SciTech Connect (OSTI)

    Kashikhin, V.V.; Ambrosio, G.; Andreev, N.; Barzi, E.; Bossert, R.; DiMarco, J.; Kashikhin, V.S.; Lamm, M.; Novitski, I.; Schlabach, P.; Velev, G.; Yamada, R.; Zlobin, A.V.; /Fermilab

    2005-05-01

    Four nearly identical Nb{sub 3}Sn dipole models of the same design were built and tested at Fermilab. It provided a unique opportunity of systematic study the field quality effects in Nb{sub 3}Sn accelerator magnets. The results of these studies are reported in the paper.

  6. Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Vehicles GE Showcases Innovation in Alternative Fuel Vehicles to someone by E-mail Share Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel Vehicles on Facebook Tweet about Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel Vehicles on Twitter Bookmark Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel Vehicles on Google Bookmark Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel Vehicles on

  7. Communication: Nanosize-induced restructuring of Sn nanoparticles

    SciTech Connect (OSTI)

    Sabet, Sareh; Kaghazchi, Payam

    2014-05-21

    Stabilities and structures of ?- and ?-Sn nanoparticles are studied using density functional theory. Results show that ?-Sn nanoparticles are more stable. For both phases of Sn, nanoparticles smaller than 1nm (?48 atoms) are amorphous and have a band gap between 0.4 and 0.7eV. The formation of band gap is found to be due to amorphization. By increasing the size of Sn nanoparticles (12.4nm), the degree of crystallization increases and the band gap decreases. In these cases, structures of the core of nanoparticles are bulk-like, but structures of surfaces on the faces undergo reconstruction. This study suggests a strong size dependence of electronic and atomic structures for Sn nanoparticle anodes in Li-ion batteries.

  8. DISPLAYING THE HETEROGENEITY OF THE SN 2002cx-LIKE SUBCLASS OF TYPE Ia SUPERNOVAE WITH OBSERVATIONS OF THE Pan-STARRS-1 DISCOVERED SN 2009ku

    SciTech Connect (OSTI)

    Narayan, G.; Foley, R. J.; Berger, E.; Chornock, R.; Rest, A.; Soderberg, A. M.; Kirshner, R. P.; Botticella, M. T.; Smartt, S.; Valenti, S.; Huber, M. E.; Scolnic, D.; Grav, T.; Burgett, W. S.; Chambers, K. C.; Flewelling, H. A.; Gates, G.; Kaiser, N.; Magnier, E. A.; Morgan, J. S. E-mail: rfoley@cfa.harvard.edu

    2011-04-10

    SN 2009ku, discovered by Pan-STARRS-1, is a Type Ia supernova (SN Ia), and a member of the distinct SN 2002cx-like class of SNe Ia. Its light curves are similar to the prototypical SN 2002cx, but are slightly broader and have a later rise to maximum in g. SN 2009ku is brighter ({approx}0.6 mag) than other SN 2002cx-like objects, peaking at M{sub V} = -18.4 mag, which is still significantly fainter than typical SNe Ia. SN 2009ku, which had an ejecta velocity of {approx}2000 km s{sup -1} at 18 days after maximum brightness, is spectroscopically most similar to SN 2008ha, which also had extremely low-velocity ejecta. However, SN 2008ha had an exceedingly low luminosity, peaking at M{sub V} = -14.2 mag, {approx}4 mag fainter than SN 2009ku. The contrast of high luminosity and low ejecta velocity for SN 2009ku is contrary to an emerging trend seen for the SN 2002cx class. SN 2009ku is a counterexample of a previously held belief that the class was more homogeneous than typical SNe Ia, indicating that the class has a diverse progenitor population and/or complicated explosion physics. As the first example of a member of this class of objects from the new generation of transient surveys, SN 2009ku is an indication of the potential for these surveys to find rare and interesting objects.

  9. Kondo-lattice behavior and multiple characteristic temperatures in CeIr{sub 2}Ge{sub 2}

    SciTech Connect (OSTI)

    Mallik, R.; Sampathkumaran, E.V.; Paulose, P.L.; Dumschat, J.; Wortmann, G.

    1997-02-01

    The results of electrical-resistivity {rho} measurements (1.4{endash}300 K) on the alloys, Ce{sub 1{minus}x}La{sub x}Ir{sub 2}Ge{sub 2} (0{le}x{le}1), CeIr{sub 2{minus}x}(Rh,Pt){sub x}Ge{sub 2} (x=0.2 and 0.4), and CeIr{sub 2}Ge{sub 2{minus}x}(Si,Sn){sub x} (x=0.2 and 0.4), are reported in order to understand the Kondo effect in CeIr{sub 2}Ge{sub 2}. There is a significant decrease in {rho} as the temperature is lowered from 100 to 4.2 K for x = 0.0. This feature disappears for a small replacement of Ce by La (x = 0.3), thereby resulting in a single-ion Kondo effect for higher values of x. This finding establishes that the temperature T{sub coh}, characterizing the coherent scattering among the Kondo centers for x=0 is as large as about 100 K. The coherent scattering is not destroyed by small substitutions at the Ir or Ge site. The observed sensitivity of this coherence effect to a small disruption of Ce sublattice periodicity alone by La substitution is uncommon among trivalent Ce alloys. Such a large T{sub coh} value enables us to emphasize the need to invoke three characteristic temperatures for nonmagnetic Kondo lattices. {copyright} {ital 1997} {ital The American Physical Society}

  10. New Global Research Website | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    I Want to See... the New Global Research Website Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) I Want to See... the New Global Research Website GE Global Research 2014.03.17 Today, we are excited to unveil the brand new GE Global Research website. You can find this new web destination at geglobalresearch.com. The new

  11. Promoting Cross Research Collaboration | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Israel's Weekathon: GE Collaborating with multinational companies Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Israel's Weekathon: GE Collaborating with multinational companies Gil Abramovich 2015.09.21 When taken out of their normal work environments for a week, offered an endless supply of snacks, and given the

  12. Work and Life Balance | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Flex Ability: Balancing Work with Life Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Flex Ability: Balancing Work with Life Achieving work/life balance is a much-talked-about topic. According to GE Healthcare's Kelly Piacsek, "GE hires people for what's inside their head-what they know-and

  13. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sundeep Kumar Sundeep Kumar Senior Scientist Ceramics Synthesis & Processing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "I leverage the experience and network I have built over the years working with some of the finest minds at GE to help me solve tough technical problems for GE." -Sundeep Kumar

  14. Licensing Our Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Teaming Up With Idea Works Puts Our Tech Into the World Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Teaming Up With Idea Works Puts Our Tech Into the World GE Idea Works is extending the reach of our technology by connecting GE's internal intellectual property, technology and resources with the external world. With

  15. GE's Christine Furstoss Named to NACIE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    U.S. Secretary of Commerce Penny Pritzker Announces GE's Christine Furstoss to Serve on the National Advisory Council on Innovation and Entrepreneurship Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) U.S. Secretary of Commerce Penny Pritzker Announces GE's Christine Furstoss to Serve on the National Advisory Council on

  16. Underground CO2 Storage | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Enhanced Sensing Capabilities for CO2 Storage Wells Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Enhanced Sensing Capabilities for CO2 Storage Wells GE (NYSE: GE) Global Research today announced it has signed a contract with the National Energy Technology Laboratory (NETL), part of the U.S. Department of Energy (DOE)

  17. Artificial Lift Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technology: Driving the Artificial Lift Market Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Technology: Driving the Artificial Lift Market Gary Ford, president and CEO of GE Artificial Lift, discusses what the equipment does, the current state of the market and the importance of working with GE's Global Research

  18. Lab helps to discover supernova ASAS-SN

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Lab helps to discover supernova ASAS-SN Lab helps to discover supernova ASAS-SN Machine-learning technology developed at Los Alamos National Laboratory helps power ASAS-SN, providing the software that picks out these events from the images the project spots. January 15, 2016 ASSASN An artist's impression of the record-breakingly powerful, superluminous supernova ASASSN-15lh as it would appear from an exoplanet located about 10,000 light years away in the host galaxy of the supernova. (Credit:

  19. Who Is Jim Bray, GE Stump the Scientist? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Who Is Jim Bray, GE Stump the Scientist? Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Who Is Jim Bray, GE Stump the Scientist? 2012.05.30 Chief Scientist Jim Bray introduces himself and talks about his work and time at GE. 0 Comments Comment Name Email Submit Comment

  20. GE Announces Vic Abate as New Chief Technology Officer | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Names Vic Abate New Chief Technology Officer; Succeeds Mark Little Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Names Vic Abate New Chief Technology Officer; Succeeds Mark Little Vic Abate, President and CEO of GE's Power Generation business, to succeed Mark Little and continue GE's leadership in the Digital

  1. Science and BBQ: GE makes its mark, and bark, at SXSW | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and BBQ: GE makes its mark ... and bark! Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Science and BBQ: GE makes its mark ... and bark! Lynn DeRose 2015.03.20 This is the fifth in a five-part series of dispatches from GE's Science of Barbecue Experience at South by Southwest. Our state-of-the-art Brilliant

  2. GE Scientists Source Best Ideas at hackMIT | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Scientists Source Best Ideas at hackMIT Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Scientists Source Best Ideas at hackMIT Joseph Salvo 2013.10.03 At MIT they're serious about "hacking" together ideas for innovation, invention, and new businesses. This weekend a team from GE Global Research and GE

  3. GE launches 'STEM empowers OK' initiative in Oklahoma City | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research GE, OCAST and OSSM Partner to Launch "STEM Empowers OK" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, OCAST and OSSM Partner to Launch "STEM Empowers OK" stem empowers ok GE Foundation donates $400,000 to enhance STEM education initiatives across Oklahoma STEM Empowers OK to

  4. Phase transitions in Ge-Sb phase change materials

    SciTech Connect (OSTI)

    Raoux, Simone; Virwani, Kumar; Hitzbleck, Martina; Salinga, Martin; Madan, Anita; Pinto, Teresa L.

    2009-03-15

    Thin films of the phase change material Ge-Sb with Ge concentrations between 7.3 and 81.1 at. % were deposited by cosputtering from elemental targets. Their crystallization behavior was studied using time-resolved x-ray diffraction, Auger electron spectroscopy, differential scanning calorimetry, x-ray reflectivity, profilometry, optical reflectivity, and resistivity versus temperature measurements. It was found that the crystallization temperature increases with Ge content. Calculations of the glass transition temperature (which is a lower limit for the crystallization temperature T{sub x}) also show an increase with Ge concentration closely tracking the measured values of T{sub x}. For low Ge content samples, Sb x-ray diffraction peaks occurred during a heating ramp at lower temperature than Ge diffraction peaks. The appearance of Ge peaks is related to Ge precipitation and agglomeration. For Ge concentrations of 59.3 at. % and higher, Sb and Ge peaks occurred at the same temperature. Upon crystallization, film mass density and optical reflectivity increase as well as electrical contrast (ratio of resistivity in amorphous phase to crystalline phase) all showed a maximum for the eutectic alloy (14.5 at. % Ge). For the alloy with 59.3 at. % Ge there was very little change in any of these parameters, while the alloy with 81.1 at. % Ge behaved opposite to a typical phase change alloy and showed reduced mass density and reflectivity and increased resistivity.

  5. 119Sn-NMR investigations on superconducting Ca3Ir4Sn13: Evidence for multigap superconductivity

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sarkar, R.; Petrovic, C.; Bruckner, F.; Gunther, M.; Wang, Kefeng; Biswas, P. K.; Luetkens, H.; Morenzoni, E.; Amato, A.; Klauss, H. -H.

    2015-09-25

    In this study, we report bulk superconductivity (SC) in Ca3Ir4Sn13 by means of 119Sn nuclear magnetic resonance (NMR) experiments. Two classical signatures of BCS superconductivity in spin-lattice relaxation rate (1/T1), namely the Hebel–Slichter coherence peak just below the Tc, and the exponential decay in the superconducting phase, are evident. The noticeable decrease of 119Sn Knight shift below Tc indicates spin-singlet superconductivity. The temperature dependence of the spin-lattice relaxation rate 119(1/T1) is convincingly described by the multigap isotropic superconducting gap. NMR experiments do not witness any sign of enhanced spin fluctuations.

  6. GE Lighting Solutions: Order (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE ordered General Electric Lighting Solutions, LLC to pay a $5,360 civil penalty after finding GE Lighting Solutions had manufactured and distributed in commerce in the U.S. 30 units of basic model DR4-RTFB-23B and 177 units (of which 85 units remain in inventory) of basic model DR4-RTFB-77A-002, noncompliant traffic signal modules.

  7. Nanotextured Anti-Icing Surfaces | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Demonstrate Promising Anti-icing Nano Surfaces Click to email this to a friend (Opens in ... GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today ...

  8. At-Home Natural Gas Refueling | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Projects Agency for Energy (ARPA-E) to develop an affordable at-home ... 2.3 million, which will be shared by ARPA-E and GE. As part of the program, GE ...

  9. COLLOQUIUM: Future Electrical Technologies From a GE Viewpoint...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1, 2015, 4:00pm to 5:30pm Colloquia MBG Auditorium COLLOQUIUM: Future Electrical Technologies From a GE Viewpoint Dr. James Bray GE Global Research I will give a brief overview of...

  10. Future of 3D Printing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    In 2016, GE will enter a new jet engine into service called the CFM LEAP-the first in GE's line to incorporate 3D-printed parts. Specifically, it will be a combustion component ...

  11. GE launches 'STEM empowers OK' initiative in Oklahoma City |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Foundation donates 400,000 to enhance STEM education initiatives across Oklahoma STEM Empowers OK to sponsor week-long, GE Summer Science Academy at OSSM for Oklahoma students ...

  12. Intern Shares Insight Into Researchers' Minds |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (Opens in new window) The Quality of GE Researchers...and Why That's So Important Daniel Cadel 2014.08.14 GE Global Research asked some of our interns to share why they wanted...

  13. What Happens in Research-Based Design | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    paths we have at GE Global Research ("GE Leaders are Researchers Too",). The field of gas turbine heat transfer is growing in importance, and as a result, we have a lot of job...

  14. TEE-0074- In the Matter of GE Appliances & Lighting

    Broader source: Energy.gov [DOE]

    This Decision and Order considers an Application for Exception filed by GE Appliances & Lighting (GE) seeking exception relief from the provision of 10 C.F.R. Part 430, Energy Conservation...

  15. VEA-0016- In the Matter of GE Appliances

    Broader source: Energy.gov [DOE]

    Sub-Zero Freezer Co. (Sub-Zero), GE Appliances (GE), and Whirlpool Corporation (Whirlpool) filed appeals of our November 3, 2000 decision, granting Viking Range Corporation (Viking) a six-month...

  16. GE Store for Technology is Open for Business | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    this way. The GE Store is a place where every business can come for technologies, product development and services that no one else can provide. The work of our researchers ties...

  17. GE and Maker Faire Are a Match Made in Nerd Heaven | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE and Maker Faire Are a Match Made in Nerd Heaven Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new ...

  18. GE CRD SERVICE ORDER TERMS AND CONDITIONS (6/00)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE GLOBAL RESEARCH SERVICE ORDER TERMS AND CONDITIONS (May 2013) FORM A INTEGRITY STATEMENT: If you as a supplier become aware of any situation that appears to be inconsistent with GE's Policy to maintain lawful and fair practices in its supplier relationships, you may write to our Ombudsman at: GE Global Research, One Research Circle, Niskayuna, NY 12309. 1. ACCEPTANCE AND TERMS AND CONDITIONS: (a) Seller accepts this Order and any changes by signing the acceptance copy and returning it to GE.

  19. Phase transformation between Cu(In,Sn){sub 2} and Cu{sub 2}(In,Sn) compounds formed on single crystalline Cu substrate during solid state aging

    SciTech Connect (OSTI)

    Tian, Feifei; Liu, Zhi-Quan Guo, Jingdong

    2014-01-28

    Interfacial reactions between eutectic SnIn and single crystalline Cu during solid-state aging at low temperature were investigated systematically. Three types of phase transformations between Cu(In,Sn){sub 2} layer and Cu{sub 2}(In,Sn) layer were observed, which are Cu(In,Sn){sub 2} grows and Cu{sub 2}(In,Sn) consumes at 40?C, Cu(In,Sn){sub 2} and Cu{sub 2}(In,Sn) grow simultaneously at 60?C, as well as Cu(In,Sn){sub 2} consumes and Cu{sub 2}(In,Sn) grows at 80 and 100?C. According to physicochemical approach, the chemical reactions at Cu/Cu{sub 2}(In,Sn)/Cu(In,Sn){sub 2}/SnIn interfaces were discussed in detail. It was concluded that the diffusion ability of Cu and In atoms dominated different phase transformations. When diffusion constants k{sub 1In2}?>?8/3k{sub 1Cu2} Cu(In,Sn){sub 2} will grow, and if k{sub 1Cu2}???k{sub 1In2} Cu{sub 2}(In,Sn) will grow. Both Cu(In,Sn){sub 2} and Cu{sub 2}(In,Sn) can grow in the condition of k{sub 1In2} ? k{sub 1Cu2}. The values of k{sub 1Cu2} and k{sub 1In2} at different temperatures on (100)Cu and (111)Cu substrate were also calculated or estimated by analyzing the growth kinetics of the compound layers.

  20. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect (OSTI)

    Norris, D. J.; Qiu, Y.; Walther, T.; Dobbie, A.; Myronov, M.

    2014-01-07

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1−x}Ge{sub x} alloys for germanium concentrations x ≤ 0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28 < x ≤ 1 form islands after deposition of ∼3.0/x monolayers (=quarter unit cells in the diamond lattice, ML). The uncertainty in the amount of deposited material for pure Ge is ±(0.2–0.3) ML. Modelling shows that of the amount of germanium deposited, 0.7 ML segregate towards the free surface so that only ∼2.3/x ML are directly incorporated in the layer within a few nanometres, in good agreement with our measurements. For pure Ge (x = 1), this thickness is smaller than most values quoted in the literature, which we attribute to the high sensitivity of our method to fractional monolayer changes in the effective chemical width of such thin layers.

  1. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-02-05

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore » dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

  2. Ethanol Oxidation on the Ternary PtRhSnO2/C Electrocatalysts with Varied Pt:Rh:Sn ratios

    SciTech Connect (OSTI)

    Adzic, R.R.; Li, M.; Kowal, A.; Sasaki, K.; Marinkovic, N.; Su, D.; Korach, E.; Liu, P.

    2010-05-30

    Ternary Pt-Rh-SnO{sub 2}/C electrocatalysts with the atomic ratio Pt:Rh:Sn = 3:1:x, where x varies from 2 to 6, were synthesized using the modified polyol method followed by thermal treatment. Several techniques used to characterize these electrocatalysts showed they were composed of homogeneous PtRh alloy and SnO{sub 2}, having all three constituents coexisting in single nanoparticles with the average particle size around 1.4 nm and a narrow size distribution. While all the electrocatalysts investigated exhibited high catalytic activity for ethanol oxidation, the most active one had the composition with the Pt:Rh:Sn = 3:1:4 atomic ratio. These ternary-electrocatalysts effectively split the C-C bond in ethanol at room temperature in acidic solutions, which is verified using the in situ IRRAS technique.

  3. GEANT4 Simulation of Hadronic Interactions at 8-GeV/C to 10-GeV...

    Office of Scientific and Technical Information (OSTI)

    to the HARP-CDP Group Citation Details In-Document Search Title: GEANT4 Simulation of Hadronic Interactions at 8-GeVC to 10-GeVC: Response to the HARP-CDP Group The results of ...

  4. GE Appliances: Order (2012-SE-1403) | Department of Energy

    Energy Savers [EERE]

    Appliances: Order (2012-SE-1403) GE Appliances: Order (2012-SE-1403) October 3, 2012 DOE ordered GE Appliances, a Division of General Electric Company to pay a $63,000 civil penalty after finding GE had privately labeled and distributed in commerce in the U.S. the 4-cubic-foot capacity refrigerator basic model SMR04GAZCS, which includes models SMR04GAZACS and SMR04GAZBCS. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and GE. PDF icon GE Appliances: Order

  5. Synthesis of superconducting Nb3Sn coatings on Nb substrates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Barzi, E.; Franz, S.; Reginato, F.; Turrioni, D.; Bestetti, M.

    2015-12-01

    In the present work the electrochemical and thermal syntheses of superconductive Nb3Sn films are investigated. The Nb3Sn phase is obtained by electrodeposition of Sn layers and Cu intermediate layers onto Nb substrates followed by high temperature diffusion in inert atmosphere. Electrodeposition was performed from aqueous solutions at current densities in the 20 to 50 mA/cm2 range and at temperatures between 40 and 50°C. Subsequent thermal treatments were realized to obtain the Nb3Sn superconductive phase. Glow discharge optical emission spectrometry (GDOES) demonstrated that after thermal treatment interdiffusion of Nb and Sn occurred across a thickness of about 13 μm. Scanning Electronmore » Microscopy (SEM) allowed accurately measuring the thickness of the Nb3Sn phase, whose average for the various types of film samples was between 5.7 and 8.0 μm. X-ray diffraction (XRD) patterns confirmed the presence of a cubic Nb3Sn phase (A15 structure) having (210) preferred orientation. The maximum obtained Tc was 17.68 K and the Bc20 ranged between 22.5 T and 23.8 T. With the procedure described in the present paper, coating complex shapes cost-effectively becomes possible, which is typical of electrochemical techniques. Furthermore, this approach can be implemented in classical wire processes such as "Jelly Roll" or "Rod in Tube", or directly used for producing superconducting surfaces. In conclusion, the potential of this method for Superconducting Radiofrequency (SRF) structures is also outlined.« less

  6. 12 GeV Upgrade | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    12 GeV Upgrade Physicists at Jefferson Lab are trying to find answers to some of nature's most perplexing questions about the universe by exploring the nucleus of the atom. Their goal is to answer such questions as: "What is the universe made of?" and "What holds everyday matter together?" In their search for answers, physicists smash electrons into atoms using Jefferson Lab's Continuous Electron Beam Accelerator Facility. CEBAF provides physicists with an unprecedented

  7. Prompt Gamma Rays in {sup 77}Ge after Neutron Capture on {sup 76}Ge

    SciTech Connect (OSTI)

    Meierhofer, Georg; Grabmayr, Peter; Jochum, Josef [Physikalisches Institut, Eberhard Karls Universitaet Tuebingen, Auf der Morgenstelle 14, 72076 Tuebingen (Germany); Canella, Lea [Institut fuer Radiochemie, Technische Universitaet Muenchen, Walther-Meissner-Str. 3, 85748 Garching (Germany); Jolie, Jan; Kudejova, Petra; Warr, Nigel [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Cologne (Germany)

    2009-01-28

    The observation of neutrinoless double beta decay would be proof of the Majorana nature of the neutrino. Half-lives for these decays are very long (for {sup 76}Ge:>10{sup 25} y), so background reduction and rejection is the major task for double beta experiments. The GERDA (GERmanium Detector Array) experiment at the Gran Sasso Laboratory of the INFN (LNGS) searches for neutrinoless double beta decay of {sup 76}Ge. The isotope {sup 76}Ge is an ideal candidate because it can be used as source and detector at the same time. A large remaining contribution to the background arises from the prompt gamma cascade after neutron capture by {sup 76}Ge followed by {beta}{sup -}-decay of {sup 77}Ge. Since the prompt gamma decay scheme is poorly known, measurements with isotopically enriched Germanium samples were carried out at the PGAA facility at the research reactor FRM II (Munich). With the known prompt gamma spectrum it will be possible to improve the overall veto efficiency of the GERDA experiment.

  8. Electronic Structure and Optical Properties of Cu2ZnGeSe4. First-Principles Calculations and Vacuum-Ultraviolet Spectroscopic Ellipsometric Studies

    SciTech Connect (OSTI)

    Choi, Sukgeun; Park, Ji-Sang; Donohue, Andrea; Christensen, Steven T.; To, Bobby; Beall, Carolyn; Wei, Su-Huai; Repins, Ingid L.

    2015-11-19

    Cu2ZnGeSe4 is of interest for the development of next-generation thin-film photovoltaic technologies. To understand its electronic structure and related fundamental optical properties, we perform first-principles calculations for three structural variations: kesterite, stannite, and primitive-mixed CuAu phases. The calculated data are compared with the room-temperature dielectric function?=?1+i?2 spectrum of polycrystalline Cu2ZnGeSe4 determined by vacuum-ultraviolet spectroscopic ellipsometry in the photon-energy range of 0.7 to 9.0 eV. Ellipsometric data are modeled with the sum of eight Tauc-Lorentz oscillators, and the best-fit model yields the band-gap and Tauc-gap energies of 1.25 and 1.19 eV, respectively. A comparison of overall peak shapes and relative intensities between experimental spectra and the calculated ? data for three structural variations suggests that the sample may not have a pure (ordered) kesterite phase. We found that the complex refractive index N=n+ik, normal-incidence reflectivity R, and absorption coefficients ? are calculated from the modeled ? spectrum, which are also compared with those of Cu2ZnSnSe4 . The spectral features for Cu2ZnGeSe4 appear to be weaker and broader than those for Cu2ZnSnSe4 , which is possibly due to more structural imperfections presented in Cu2ZnGeSe4 than Cu2ZnSnSe4 .

  9. Superconducting and magnetic properties of Sr?Ir?Sn??

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Biswas, P. K.; Wang, Kefeng; Amato, A.; Khasanov, R.; Luetkens, H.; Petrovic, C.; Cook, R. M.; Lees, M. R.; Morenzoni, E.

    2014-10-10

    Magnetization and muon spin relaxation or rotation (SR) measurements have been performed to study the superconducting and magnetic properties of Sr?Ir?Sn??. From magnetization measurements the lower and upper critical fields of Sr?Ir?Sn?? are found to be 81(1) Oe and 14.4(2) kOe, respectively. Zero-field SR data show no sign of any magnetic ordering or weak magnetism in Sr?Ir?Sn??. Transverse-field SR measurements in the vortex state provided the temperature dependence of the magnetic penetration depth ?. The dependence of ?? with temperature is consistent with the existence of single s-wave energy gap in the superconducting state of Sr?Ir?Sn?? with a gap valuemoreof 0.82(2) meV at absolute zero temperature. The magnetic penetration depth at zero temperature ?(0) is 291(3) nm. The ratio ?(0)/kBTc = 2.1(1) indicates that Sr?Ir?Sn?? should be considered as a strong-coupling superconductor.less

  10. In situ visualization of metallurgical reactions in nanoscale Cu/Sn diffusion couples

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yin, Qiyue; Stach, Eric A.; Gao, Fan; Zhou, Guangwen; Gu, Zhiyong

    2015-02-10

    The Cu–Sn metallurgical soldering reaction in two-segmented Cu–Sn nanowires is visualized by in-situ transmission electron microscopy. By varying the relative lengths of Cu and Sn segments, we show that the metallurgical reaction starts at ~ 200 ° with the formation of a Cu–Sn solid solution for the Sn/Cu length ratio smaller than 1:5 while the formation of Cu–Sn intermetallic compounds (IMCs) for larger Sn/Cu length ratios. Upon heating the nanowires up to ~ 500 °C, two phase transformation pathways occur, η-Cu₆Sn₅ → ε-Cu₃Sn → δ-Cu₄₁Sn₁₁ for nanowires with a long Cu segment and η-Cu₆Sn₅ → ε-Cu₃Sn → γ-Cu₃Sn with amore » short Cu segment. The dynamic in situ TEM visualization of the evolution of Kirkendall voids demonstrates that Cu diffuses faster both in Sn and IMCs than that of Sn in Cu₃ and IMCs, which is the underlying cause of the dependence of the IMC formation and associated phase evolution on the relative lengths of the Cu and Sn segments.« less

  11. Elimination of GeO(2) And Ge(3)N(4) Interfacial Transition Regions And Defects at N-Type Ge Interfaces: a Pathway for Formation of N-MOS Devices on Ge Substrates

    SciTech Connect (OSTI)

    Lucovsky, G.; Lee, S.; Long, J.P.; Seo, H.; Luning, J.

    2009-05-19

    The contribution from relatively low-K SiON interfacial transition regions (ITRs) between Si and transition metal (TM) gate dielectrics places a significant limitation on equivalent oxide thickness (EOT) scaling for Si complementary metal-oxide-semiconductor (CMOS) devices. This limitation is equally significant and limiting for Ge CMOS devices. Low-K Ge-based ITRs in Ge devices have also been shown to limit performance and reliability, particular for n-MOS field effect transistors. This article identifies the source of significant electron trapping at interfaces between n-Ge or inverted p-Ge, and Ge oxide, nitride and oxynitride ITRs. This is shown to be an interfacial band alignment issue in which native Ge ITRs have conduction band offset energies smaller than those of TM dielectrics, and trap electrons for negative Ge substrate bias. This article also describes a novel remote plasma processing approach for effectively eliminating any significant native Ge ITRs and using a plasma-processing/annealing process sequence for bonding TM gate dielectrics directly to the Ge substrate surface.

  12. Hubble space telescope and ground-based observations of the type Iax supernovae SN 2005hk and SN 2008A

    SciTech Connect (OSTI)

    McCully, Curtis; Jha, Saurabh W. [Department of Physics and Astronomy, Rutgers, the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, NJ 08854 (United States); Foley, Ryan J. [Astronomy Department, University of Illinois at Urbana-Champaign, 1002 West Green Street, Urbana, IL 61801 (United States); Chornock, Ryan [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Holtzman, Jon A. [Department of Astronomy, MSC 4500, New Mexico State University, P.O. Box 30001, Las Cruces, NM 88003 (United States); Balam, David D. [Dominion Astrophysical Observatory, Herzberg Institute of Astrophysics, 5071 West Saanich Road, Victoria, BC V9E 2E7 (Canada); Branch, David [Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman, OK 73019 (United States); Filippenko, Alexei V.; Ganeshalingam, Mohan; Li, Weidong [Department of Astronomy, University of California, Berkeley, CA 94720-3411 (United States); Frieman, Joshua [Kavli Institute for Cosmological Physics and Department of Astronomy and Astrophysics, University of Chicago, 5640 South Ellis Avenue, Chicago, IL 60637 (United States); Fynbo, Johan; Leloudas, Giorgos [Dark Cosmology Centre, Niels Bohr Institute, University of Copenhagen, Juliane Maries Vej 30, DK-2100 Copenhagen (Denmark); Galbany, Lluis [Institut de Fsica d'Altes Energies, Universitat Autnoma de Barcelona, E-08193 Bellaterra (Barcelona) (Spain); Garnavich, Peter M. [Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States); Graham, Melissa L. [Las Cumbres Observatory Global Telescope Network, Goleta, CA 93117 (United States); Hsiao, Eric Y. [Carnegie Observatories, Las Campanas Observatory, Colina El Pino, Casilla 601 (Chile); Leonard, Douglas C., E-mail: cmccully@physics.rutgers.edu [Department of Astronomy, San Diego State University, San Diego, CA 92182 (United States); and others

    2014-05-10

    We present Hubble Space Telescope (HST) and ground-based optical and near-infrared observations of SN 2005hk and SN 2008A, typical members of the Type Iax class of supernovae (SNe). Here we focus on late-time observations, where these objects deviate most dramatically from all other SN types. Instead of the dominant nebular emission lines that are observed in other SNe at late phases, spectra of SNe 2005hk and 2008A show lines of Fe II, Ca II, and Fe I more than a year past maximum light, along with narrow [Fe II] and [Ca II] emission. We use spectral features to constrain the temperature and density of the ejecta, and find high densities at late times, with n{sub e} ? 10{sup 9} cm{sup 3}. Such high densities should yield enhanced cooling of the ejecta, making these objects good candidates to observe the expected 'infrared catastrophe', a generic feature of SN Ia models. However, our HST photometry of SN 2008A does not match the predictions of an infrared catastrophe. Moreover, our HST observations rule out a 'complete deflagration' that fully disrupts the white dwarf for these peculiar SNe, showing no evidence for unburned material at late times. Deflagration explosion models that leave behind a bound remnant can match some of the observed properties of SNe Iax, but no published model is consistent with all of our observations of SNe 2005hk and 2008A.

  13. GE's Arnie Lund Discusses User Experience at an Industrial Scale | GE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Global Research Arnie Lund Discusses User Experience at an Industrial Scale Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's Arnie Lund Discusses User Experience at an Industrial Scale Arnie Lund, manager of the UX Industrial Innovation Lab at GE Global Research in San Ramon, Calif, recently spoke to the

  14. Construction progresses at GE's Oil & Gas Technology Center | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Home > Impact > Construction progressing at GE's newest research center, the Oil & Gas Technology Center in Oklahoma City Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Construction progressing at GE's newest research center, the Oil & Gas Technology Center in Oklahoma City Construction is

  15. GE Uses 3D Printers to Make Jet Parts | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Uses 3D Printers to Make Jet Parts Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Uses 3D Printers to Make Jet Parts GE Global Research 2013.12.05 Christine Furstoss, Technology Director for Manufacturing and Materials Technologies, was interviewed on Bloomberg Television's "Bloomberg West" by Emily Chang.

  16. GE funds initiative to support STEM initiatives in Oklahoma | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research STEM Empowers OK: Initiative to enrich STEM education in Oklahoma Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) STEM Empowers OK: Initiative to enrich STEM education in Oklahoma On April 21, 2015, GE announced a grant to the state of Oklahoma to enhance STEM education initiatives. Jeff Immelt, GE's

  17. GE to provide data, analytics to Brazilian Canoe Confederation | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research to sponsor Brazilian Canoe Confederation Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE to sponsor Brazilian Canoe Confederation Innovative partnership will pair GE software scientists with athletes to explore how big data can help them optimize their performance for the Rio 2016 Olympic and Paralympic

  18. Magnetic field effects on transport properties of PtSn4 (Journal...

    Office of Scientific and Technical Information (OSTI)

    field effects on transport properties of PtSn4 Prev Next Title: Magnetic field effects on transport properties of PtSn4 Authors: Mun, Eundeok ; Ko, Hyunjin ; Miller, Gordon ...

  19. Fusion reactions of Ni 58 , 64 + Sn 124 (Journal Article) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    Fusion reactions of Ni 58 , 64 + Sn 124 Citation Details In-Document Search Title: Fusion reactions of Ni 58 , 64 + Sn 124 Authors: Jiang, C. L. ; Stefanini, A. M. ; Esbensen, H. ; ...

  20. Gold-rich R3Au7Sn3: Establishing the interdependence between...

    Office of Scientific and Technical Information (OSTI)

    Gold-rich R3Au7Sn3: Establishing the interdependence between electronic features and physical properties Title: Gold-rich R3Au7Sn3: Establishing the interdependence between ...

  1. Gold-rich R3Au7Sn3: Establishing the interdependence between...

    Office of Scientific and Technical Information (OSTI)

    Gold-rich R3Au7Sn3: Establishing the interdependence between electronic features and physical properties Citation Details In-Document Search Title: Gold-rich R3Au7Sn3: Establishing ...

  2. The Nature of the First Order Isostructural Transition in GdRhSn...

    Office of Scientific and Technical Information (OSTI)

    The Nature of the First Order Isostructural Transition in GdRhSn Citation Details In-Document Search Title: The Nature of the First Order Isostructural Transition in GdRhSn...

  3. Lattice dynamics in perovskite halides CsSn X 3 with X = I ,...

    Office of Scientific and Technical Information (OSTI)

    Lattice dynamics in perovskite halides CsSn X 3 with X I , Br , Cl Citation Details In-Document Search Title: Lattice dynamics in perovskite halides CsSn X 3 with X I , Br , Cl ...

  4. Pb-free Sn-Ag-Cu ternary eutectic solder

    DOE Patents [OSTI]

    Anderson, I.E.; Yost, F.G.; Smith, J.F.; Miller, C.M.; Terpstra, R.L.

    1996-06-18

    A Pb-free solder includes a ternary eutectic composition consisting essentially of about 93.6 weight % Sn-about 4.7 weight % Ag-about 1.7 weight % Cu having a eutectic melting temperature of about 217 C and variants of the ternary composition wherein the relative concentrations of Sn, Ag, and Cu deviate from the ternary eutectic composition to provide a controlled melting temperature range (liquid-solid ``mushy`` zone) relative to the eutectic melting temperature (e.g. up to 15 C above the eutectic melting temperature). 5 figs.

  5. Aluminum-stabilized Nb[sub 3]Sn superconductor

    DOE Patents [OSTI]

    Scanlan, R.M.

    1988-05-10

    Disclosed are an aluminum-stabilized Nb[sub 3]Sn superconductor and process for producing same, utilizing ultrapure aluminum. Ductile components are co-drawn with aluminum to produce a conductor suitable for winding magnets. After winding, the conductor is heated to convert it to the brittle Nb[sub 3]Sn superconductor phase, using a temperature high enough to perform the transformation but still below the melting point of the aluminum. This results in reaction of substantially all of the niobium, while providing stabilization and react-in-place features which are beneficial in the fabrication of magnets utilizing superconducting materials. 4 figs.

  6. Aluminum-stabilized Nb/sub 3/Sn superconductor

    DOE Patents [OSTI]

    Scanlan, R.M.

    1984-02-10

    This patent discloses an aluminum-stabilized Nb/sub 3/Sn superconductor and process for producing same, utilizing ultrapure aluminum. Ductile components are co-drawn with aluminum to produce a conductor suitable for winding magnets. After winding, the conductor is heated to convert it to the brittle Nb/sub 3/Sn superconductor phase, using a temperature high enough to perform the transformation but still below the melting point of the aluminum. This results in reaction of substantially all of the niobium, while providing stabilization and react-in-place features which are beneficial in the fabrication of magnets utilizing superconducting materials.

  7. Pb-free Sn-Ag-Cu ternary eutectic solder

    DOE Patents [OSTI]

    Anderson, Iver E.; Yost, Frederick G.; Smith, John F.; Miller, Chad M.; Terpstra, Robert L.

    1996-06-18

    A Pb-free solder includes a ternary eutectic composition consisting essentially of about 93.6 weight % Sn-about 4.7 weight % Ag-about 1.7 weight % Cu having a eutectic melting temperature of about 217.degree. C. and variants of the ternary composition wherein the relative concentrations of Sn, Ag, and Cu deviate from the ternary eutectic composition to provide a controlled melting temperature range (liquid-solid "mushy" zone) relative to the eutectic melting temperature (e.g. up to 15.degree. C. above the eutectic melting temperature).

  8. DETAILED RADIO VIEW ON TWO STELLAR EXPLOSIONS AND THEIR HOST GALAXY: XRF 080109/SN 2008D AND SN 2007uy in NGC 2770

    SciTech Connect (OSTI)

    Van der Horst, A. J.; Kouveliotou, C.; Paragi, Z.; Sage, L. J.; Pal, S.; Taylor, G. B.; Granot, J.; Ramirez-Ruiz, E.; Ishwara-Chandra, C. H.; Oosterloo, T. A.; Garrett, M. A.; Wiersema, K.; Starling, R. L. C.; Bhattacharya, D.; Curran, P. A.

    2011-01-10

    The galaxy NGC 2770 hosted two core-collapse supernova (SN) explosions, SN 2008D and SN 2007uy, within 10 days of each other and 9 years after the first SN of the same type, SN 1999eh, was found in that galaxy. In particular, SN 2008D attracted a lot of attention due to the detection of an X-ray outburst, which has been hypothesized to be caused by either a (mildly) relativistic jet or the SN shock breakout. We present an extensive study of the radio emission from SN 2008D and SN 2007uy: flux measurements with the Westerbork Synthesis Radio Telescope and the Giant Metrewave Radio Telescope, covering {approx}600 days with observing frequencies ranging from 325 MHz to 8.4 GHz. The results of two epochs of global Very Long Baseline Interferometry observations are also discussed. We have examined the molecular gas in the host galaxy NGC 2770 with the Arizona Radio Observatory 12 m telescope, and present the implications of our observations for the star formation and seemingly high SN rate in this galaxy. Furthermore, we discuss the near-future observing possibilities of the two SNe and their host galaxy at low radio frequencies with the Low Frequency Array.

  9. Recovery Act Helps GE in-source Manufacturing | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing September 30, 2010 - 2:21pm Addthis The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE Lindsay Gsell GE has a long history in Louisville, Ky. The company's appliance and lighting facility in Louisville has been manufacturing appliances

  10. Thermal Imaging Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Advanced Thermal Imaging Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Butterfly-Inspired Design Enables Advanced Thermal Imaging Bryan Whalen in the Electronics Cooling Lab at GE Global Research recorded this thermo graphic video of a Morpho butterfly structure in response to heat pulses produced by breathing onto

  11. Pi in Applied Optics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inside the Applied Optics Lab II Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The sPI CAM: Inside the Applied Optics Lab II The sPI Cam visits the Applied Optics Lab to see how Mark Meyers, a physicist and optical engineer at GE Global Research, uses Pi. You Might Also Like lightning bolt We One-Upped Ben Franklin,

  12. MU(& Ge-+v,

    Office of Legacy Management (LM)

    fil MU(& Ge-+v, . !d R&arch & Development b This document consists of 6 Contract Ho. pages and - . --------------_____---. figures No.--~--of.--~~-_-copies, Series,&,, This subcontract entered into this 20 day 0fSepte~ber , 1943, by and between the University of Cliicago, a corporation not for pecuniary profit organized under the ICVS of the Stnto of Illinois, of Chicago, Illinois (hereinafter called "the Contractor") and Yiolverine Tube Divisionof Caluzet 2 Eecla

  13. Rodrigo Rodriguez Erdmenger | Inventors | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Rodrigo Rodriguez Erdmenger Rodrigo Rodriguez Erdmenger Research Engineer Turbomachinery Aero Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "What fuels my passion for work is knowing that I can impact the technology of GE products and lives of people all over the world." -Rodrigo Rodriguez Erdmenger Ask

  14. Making Silicon Carbide Devices | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Making Silicon Carbide Devices in the Cleanroom Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Making Silicon Carbide Devices in the Cleanroom Ron Olson 2012.08.23 As the Wide Bandgap Process and Fab manager for the GE Global Research cleanroom, I wanted to take some time to give you the dirt on our clean room over the

  15. Jim Bray Interview | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Behind the Scenes with Chief Scientist Jim Bray Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Behind the Scenes with Chief Scientist Jim Bray 2013.04.25 Chief Scientist Jim Bray talks about technology milestones, his career and his life at and away from GE. 0 Comments Comment Name Email Submit Comment You Might Also

  16. Advanced Propulsion Systems | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    CFM LEAP Aircraft Engines Are Fuel- and Cost-Efficient Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) CFM LEAP Aircraft Engines Are Fuel- and Cost-Efficient The new LEAP engine, developed by CFM, has literally taken leaps in engine innovation in both fuel and cost efficiency. Scheduled to enter service in 2016, GE in

  17. Masako Yamada | Inventors | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Masako Yamada Masako Yamada Manager Advanced Computing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "I believe individuals should be given the chance to reinvent themselves. Recently, I've reinvented myself as a supercomputing person-again." -Masako Yamada Masako began her career at GE in applied optics,

  18. Advanced Composite Materials | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Composites Automation Cuts Production Time Down to Hours Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Composites Automation Cuts Production Time Down to Hours Over the next few years, GE Aviation will introduce more new engine platforms than it has in the past few decades. This will bring about unprecedented demands

  19. Smart Street Lights | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    LightGrid Provides Real-Time Feedback From Street Lights Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) LightGrid Provides Real-Time Feedback From Street Lights You use a GPS to provide real-time data from your car. Now, technologists from the Controls, Electronics and Signal Processing Lab at GE Global Research will

  20. Connecting to the Grid | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Connecting to the Grid Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Connecting to the Grid Ranjan Gupta 2014.02.24 I'm blogging this week from an event I'm always thrilled to attend - the annual ARPA-e Energy Innovation Summit in Washington. I'm joined here by a few of my colleagues from GE Global Research to

  1. Electrochemical studies of CNT/Si–SnSb nanoparticles for lithium ion batteries

    SciTech Connect (OSTI)

    Nithyadharseni, P.; Reddy, M.V.; Nalini, B.; Ravindran, T.R.; Pillai, B.C.; Kalpana, M.; Chowdari, B.V.R.

    2015-10-15

    Highlights: • Si added SnSb and CNT exhibits very low particle size of below 30 nm • A strong PL quenching due to the addition of Si to SnSb. • Electrochemical studies show CNT added SnSb shows good capacity retention. - Abstract: Nano-structured SnSb, SnSb–CNT, Si–SnSb and Si–SnSb–CNT alloys were synthesized from metal chlorides of Sn, Sb and Si via reductive co-precipitation technique using NaBH{sub 4} as reducing agent. The as prepared compounds were characterized by various techniques such as X-ray diffraction (XRD), scanning electron microscope (SEM), Raman, Fourier transform infra-red (FTIR) and photoluminescence (PL) spectroscopy. The electrochemical performances of the compounds were characterized by galvanostatic cycling (GC) and cyclic voltammetry (CV). The Si–SnSb–CNT compound shows a high reversible capacity of 1200 mAh g{sup −1}. However, the rapid capacity fading was observed during cycling. In contrast, SnSb–CNT compound showed a high reversible capacity of 568 mAh g{sup −1} at 30th cycles with good cycling stability. The improved reversible capacity and cyclic performance of the SnSb–CNT compound could be attributed to the nanosacle dimension of SnSb particles and the structural advantage of CNTs.

  2. Testimonials - Partnerships in Fuel Cells - GE Global Research |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Fuel Cells - GE Global Research Testimonials - Partnerships in Fuel Cells - GE Global Research Addthis Text Version The words "Office of Energy Efficiency & Renewable Energy, U.S. Department of Energy, EERE Partnership Testimonials," appear on the screen, followed by "Mark Little, Senior Vice President, GE Global Research" and footage of a man in a suit. Mark Little: Energy, manufacturing, innovation, and competitiveness are the core to the

  3. Commissioning and Operation of 12 GeV CEBAF

    SciTech Connect (OSTI)

    Freyberger, Arne P.

    2015-09-01

    The Continuous Electron Beam Accelerator Facility (CEBAF) located at the Thomas Jefferson National Accelerator Laboratory (JLab) has been recently upgraded to deliver continuous electron beams to the experimental users at a maximum energy of 12 GeV, three times the original design energy of 4 GeV. This paper will present an overview of the upgrade, referred to as the 12GeV upgrade, and highlights from recent beam commissioning results.

  4. Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

    SciTech Connect (OSTI)

    Vedula, Ravi Pramod; Mehrotra, Saumitra; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard; Strachan, Alejandro

    2015-05-07

    We use first principles simulations to engineer Ge nanofins for maximum hole mobility by controlling strain tri-axially through nano-patterning. Large-scale molecular dynamics predict fully relaxed, atomic structures for experimentally achievable nanofins, and orthogonal tight binding is used to obtain the corresponding electronic structure. Hole transport properties are then obtained via a linearized Boltzmann formalism. This approach explicitly accounts for free surfaces and associated strain relaxation as well as strain gradients which are critical for quantitative predictions in nanoscale structures. We show that the transverse strain relaxation resulting from the reduction in the aspect ratio of the fins leads to a significant enhancement in phonon limited hole mobility (7× over unstrained, bulk Ge, and 3.5× over biaxially strained Ge). Maximum enhancement is achieved by reducing the width to be approximately 1.5 times the height and further reduction in width does not result in additional gains. These results indicate significant room for improvement over current-generation Ge nanofins, provide geometrical guidelines to design optimized geometries and insight into the physics behind the significant mobility enhancement.

  5. Promotional effect of surface hydroxyls on electrochemical reduction of CO2 over SnOx/Sn electrode

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Cui, Chaonan; Han, Jinyu; Zhu, Xinli; Liu, Xiao; Wang, Hua; Mei, Donghai; Ge, Qingfeng

    2016-01-16

    In this study, tin oxide (SnOx) formation on tin-based electrode surfaces during CO2 electrochemical reduction can have a significant impact on the activity and selectivity of the reaction. In the present study, density functional theory (DFT) calculations have been performed to understand the role of SnOx in CO2 reduction using a SnO monolayer on the Sn(112) surface as a model for SnOx. Water molecules have been treated explicitly and considered actively participating in the reaction. The results showed that H2O dissociates on the perfect SnO monolayer into two hydroxyl groups symmetrically on the surface. CO2 energetically prefers to react withmore » the hydroxyl, forming a bicarbonate (HCO3(t)*) intermediate, which can then be reduced to either formate (HCOO*) by hydrogenating the carbon atom or carboxyl (COOH*) by protonating the oxygen atom. Both steps involve a simultaneous Csingle bondO bond breaking. Further reduction of HCOO* species leads to the formation of formic acid in the acidic solution at pH < 4, while the COOH* will decompose to CO and H2O via protonation. Whereas the oxygen vacancy (VO) in the oxide monolayer maybe formed by the reduction, it can be recovered by H2O dissociation, resulting in two embedded hydroxyl groups. The results show that the hydroxylated surface with two symmetric hydroxyls is energetically more favorable for CO2 reduction than the hydroxylated VO surface with two embedded hydroxyls. The reduction potential for the former has a limiting-potential of –0.20 V (RHE), lower than that for the latter (–0.74 V (RHE)). Compared to the pure Sn electrode, the formation of SnOx monolayer on the electrode under the operating conditions promotes CO2 reduction more effectively by forming surface hydroxyls, thereby providing a new channel via COOH* to the CO formation, although formic acid is still the major reduction product.« less

  6. Engineers Named to National Academy | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3 GE Engineers Elected to National Academy of Engineering Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) 3 GE Engineers Elected to National Academy of Engineering GE (NYSE: GE) announced today that three distinguished engineers, one from the company's Global Research Center, and two from its Aviation business, have

  7. Thoughts From the 2012 Whitney Software Symposium | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Big Data, Modeling and Simulation, High Performance Computing and the Industrial Internet as key technological enablers of GE's Software initiatives. We enjoyed speakers from...

  8. Big Data and Analytics at Work | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    time analytics is required At GE we keep pace with these trends via the Industrial Internet, a highly connected ecosystem of intelligent machines, advanced analytics and people...

  9. EEDP and Other Leadership Programs | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    capability. New strengths, skills and cultural change are needed across GE, including multilevel leadership, technical and commercial capabilities, signaling a complete...

  10. EEDP and Other Leadership Programs | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ready to dive in? Apply for the program. GE Software Leadership Program The rise of the Industrial Internet requires a new breed of talent and organizational capability. New...

  11. General Electric in India GE | Open Energy Information

    Open Energy Info (EERE)

    navigation, search Name: General Electric in India (GE) Place: New Delhi, Delhi (NCT), India Zip: 110015 Sector: Services, Wind energy Product: String representation...

  12. Silicon Carbide (SiC) Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    at much higher frequencies and temperatures and convert electric power at higher efficiency or lower losses. ... Carbide Power Chip Fabrication Line GE is partnering with the SUNY ...

  13. GE China Technology Center Wins Top 12 Most Innovative Practices...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    China Technology Center Wins Top 12 Most Innovative Practices Award of "Multinational ... GE China Technology Center Wins Top 12 Most Innovative Practices Award of "Multinational ...

  14. China Technology Center Celebrates 15 Years | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    China Technology Center Celebrates 15 Years of Innovation "In China for China" Click to ... GE's China Technology Center Celebrates 15 Years of Innovation "In China for China" ...

  15. High-Speed Network Enables Industrial Internet | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE software scientists and developers to spur high-speed connectivity and access to really big data Disruptive innovation demonstrates industry success in creating viable test beds ...

  16. Invention Factor: How Will The World Get Smaller | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    is changing the manufacturing process for jet engines and opening up the world of air ... to the Real World in 10 Years primusenginefeaturedimage3 GE Innovation and ...

  17. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect (OSTI)

    Steglich, Martin; Schrempel, Frank; Fchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Hche, Thomas; Tnnermann, Andreas; Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380C. Typical Stransky-Krastanov growth is observed at 410C. At lower temperatures (320C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  18. GE Software Expert Julian Keith Loren Discusses Innovation and the

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Industrial Internet | GE Global Research GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet Julian Keith Loren, a senior product manager at GE

  19. A Sneak Peek Into Santa's Smarter Sleigh | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    legs a break. - An upgraded sleigh frame made from GE's high temperature Ceramic Matrix Composites (CMCs). The CMCs can withstand the heat of entry and reentry in earth's...

  20. Secretary Chu Speaks at GE Solar Facility | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GE Solar Facility Secretary Chu Speaks at GE Solar Facility November 18, 2011 - 1:19pm Addthis Secretary Steven Chu's remarks, as prepared for delivery, at the General Electric Solar Facility in Arvada, Colorado. Thank you, Fred [Seymour], for the introduction. GE is a leader in energy innovation. Thomas Edison, the father of GE, once said, "I'd put my money on the sun and solar energy. What a source of power!" I imagine he would be amazed by the solar technology that is tested here.

  1. 3D Printing Aircraft Parts | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in GE aircraft engines signals a paradigm shift that is happening with the emergence of additive manufacturing. Additive not only offers the opportunity to design parts never...

  2. The Wizard of Schenectady: Charles Proteus Steinmetz | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    week the Smithsonian's "Past Imperfect" blog highlighted a man near and dear to the heart of GE Global Research, Charles Proteus Steinmetz. The article paints a really...

  3. Silicon Carbide in the Cleanroom | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inside the GE Global Research Clean Room: Silicon Carbide Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Inside the GE Global Research Clean Room: Silicon Carbide GE Global Research is working on nanoscale silicon carbide devices. Find out what we're doing. You Might Also Like 2-1-10-v-working-at-ge-research The Dirt

  4. Cloud Computing Manufacturing Efforts Take Off | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    cloud computing capabilities. Last year, we demonstrated an innovative crowdsourcing platform with DARPA and are now exploring the use of this technology for GE and its partners. ...

  5. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    SciTech Connect (OSTI)

    Knowlton, W.B. |

    1995-07-01

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

  6. Orbitally-driven giant phonon anharmonicity in SnSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Chen W.; Hong, Jiawang; May, Andrew F.; Bansal, Dipanshu; Chi, Songxue; Hong, Tao; Ehlers, Georg; Delaire, Olivier A.

    2015-10-19

    We understand that elementary excitations and their couplings in condensed matter systems is critical to develop better energy-conversion devices. In thermoelectric materials, the heat-to-electricity conversion efficiency is directly improved by suppressing the propagation of phonon quasiparticles responsible for macroscopic thermal transport. The material with the current record for thermoelectric conversion efficiency, SnSe, achieves an ultra-low thermal conductivity, but the mechanism enabling this strong phonon scattering remains largely unknown. Using inelastic neutron scattering measurements and first-principles simulations, we mapped the four-dimensional phonon dispersion surfaces of SnSe, and revealed the origin of ionic-potential anharmonicity responsible for the unique properties of SnSe. Wemore » show that the giant phonon scattering arises from an unstable electronic structure, with orbital interactions leading to a ferroelectric-like lattice instability. Our results provide a microscopic picture connecting electronic structure and phonon anharmonicity in SnSe, and offers precious insights on how electron-phonon and phononphonon interactions may lead to the realization of ultra-low thermal conductivity.« less

  7. Evolution of the pygmy dipole resonance in Sn isotopes

    SciTech Connect (OSTI)

    Toft, H. K.; Larsen, A. C.; Buerger, A.; Guttormsen, M.; Goergen, A.; Nyhus, H. T.; Renstroem, T.; Siem, S.; Tveten, G. M.; Voinov, A.

    2011-04-15

    Nuclear level density and {gamma}-ray strength functions of {sup 121,122}Sn below the neutron separation energy are extracted with the Oslo method using the ({sup 3}He,{sup 3}He{sup '{gamma}}) and ({sup 3}He,{alpha}{gamma}) reactions. The level densities of {sup 121,122}Sn display steplike structures, interpreted as signatures of neutron pair breaking. An enhancement in both strength functions, compared to standard models for radiative strength, is observed in our measurements for E{sub {gamma}} > or approx. 5.2 MeV. This enhancement is compatible with pygmy resonances centered at {approx_equal}8.4(1) and {approx_equal}8.6(2) MeV, respectively, and with integrated strengths corresponding to {approx_equal}1.8{sub -5}{sup +1}% of the classical Thomas-Reiche-Kuhn sum rule. Similar resonances were also seen in {sup 116-119}Sn. Experimental neutron-capture cross reactions are well reproduced by our pygmy resonance predictions, while standard strength models are less successful. The evolution as a function of neutron number of the pygmy resonance in {sup 116-122}Sn is described as a clear increase of centroid energy from 8.0(1) to 8.6(2) MeV, but with no observable difference in integrated strengths.

  8. Orbitally-driven giant phonon anharmonicity in SnSe

    SciTech Connect (OSTI)

    Li, Chen W.; Hong, Jiawang; May, Andrew F.; Bansal, Dipanshu; Chi, Songxue; Hong, Tao; Ehlers, Georg; Delaire, Olivier A.

    2015-10-19

    We understand that elementary excitations and their couplings in condensed matter systems is critical to develop better energy-conversion devices. In thermoelectric materials, the heat-to-electricity conversion efficiency is directly improved by suppressing the propagation of phonon quasiparticles responsible for macroscopic thermal transport. The material with the current record for thermoelectric conversion efficiency, SnSe, achieves an ultra-low thermal conductivity, but the mechanism enabling this strong phonon scattering remains largely unknown. Using inelastic neutron scattering measurements and first-principles simulations, we mapped the four-dimensional phonon dispersion surfaces of SnSe, and revealed the origin of ionic-potential anharmonicity responsible for the unique properties of SnSe. We show that the giant phonon scattering arises from an unstable electronic structure, with orbital interactions leading to a ferroelectric-like lattice instability. Our results provide a microscopic picture connecting electronic structure and phonon anharmonicity in SnSe, and offers precious insights on how electron-phonon and phononphonon interactions may lead to the realization of ultra-low thermal conductivity.

  9. XAS/EXAFS studies of Ge nanoparticles produced by reaction between Mg{sub 2}Ge and GeCl{sub 4}

    SciTech Connect (OSTI)

    Pugsley, Andrew J.; Bull, Craig L.; Sella, Andrea; Sankar, Gopinathan; McMillan, Paul F.

    2011-09-15

    We present results of an XAS and EXAFS study of the synthesis of Ge nanoparticles formed by a metathesis reaction between Mg{sub 2}Ge and GeCl{sub 4} in diglyme (diethylene glycol dimethyl ether). The progress of the formation reaction and the products formed at various stages in the processing was characterised by TEM and optical spectroscopy as well as in situ XAS/EXAFS studies using specially designed reaction cells. - Graphical abstract: Nano-Ge particles 2-10 nm in diameter were prepared by reaction between Mg{sub 2}Ge Zintl phase and GeCl{sub 4} in diglyme followed by capping with BuLi and extraction into hexane. We used synchrotron X-ray absorption spectroscopy (XAS) at the Ge K edge with analysis of the EXAFS region combined with room temperature photoluminescence and TEM to characterise the nature of the nanoparticles and model compounds and to follow the course of the reaction. A TEM image of the germanium nanoparticles is shown. Highlights: > In situ characteristaion of germanium nanoparticles. > X-ray spectroscopic technique development. > Improving quality of nanoparticles grown by metathesis route.

  10. GEANT4 Simulation of Hadronic Interactions at 8-GeV/C to 10-GeV/C: Response

    Office of Scientific and Technical Information (OSTI)

    to the HARP-CDP Group (Journal Article) | SciTech Connect GEANT4 Simulation of Hadronic Interactions at 8-GeV/C to 10-GeV/C: Response to the HARP-CDP Group Citation Details In-Document Search Title: GEANT4 Simulation of Hadronic Interactions at 8-GeV/C to 10-GeV/C: Response to the HARP-CDP Group The results of the HARP-CDP group on the comparison of GEANT4 Monte Carlo predictions versus experimental data are discussed. It is shown that the problems observed by the group are caused by an

  11. Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers

    SciTech Connect (OSTI)

    Kurosawa, Masashi; Kato, Motohiro; Yamaha, Takashi; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki

    2015-04-27

    High-Sn-content SiSn alloys are strongly desired for the next-generation near-infrared optoelectronics. A polycrystalline growth study has been conducted on amorphous SiSn layers with a Sn-content of 2%30% deposited on either a substrate of SiO{sub 2} or SiN. Incorporating 30% Sn into Si permits the crystallization of the amorphous layers at annealing temperatures below the melting point of Sn (231.9?C). Composition analyses indicate that approximately 20% of the Sn atoms are substituted into the Si lattice after solid-phase crystallization at 150220?C for 5?h. Correspondingly, the optical absorption edge is red-shifted from 1.12?eV (Si) to 0.83?eV (Si{sub 1?x}Sn{sub x} (x???0.18??0.04)), and the difference between the indirect and direct band gap is significantly reduced from 3.1?eV (Si) to 0.22?eV (Si{sub 1?x}Sn{sub x} (x???0.18??0.04)). These results suggest that with higher substitutional Sn content the SiSn alloys could become a direct band-gap material, which would provide benefits for Si photonics.

  12. Extra gamma-ray strength for {sup 116,117}Sn arising from pygmy dipole resonance

    SciTech Connect (OSTI)

    Kamata, M.; Utsunomiya, H.; Akimune, H.; Yamagata, T.; Itoh, O.; Iwamoto, C.; Kondo, T.; Toyokawa, H.; Lui, Y.-W.; Goriely, S.

    2010-06-01

    Photoneutron cross sections were measured for {sup 117}Sn and {sup 116}Sn near neutron thresholds with quasi-monochromatic laser Compton scattering gamma-rays. The measured cross sections for {sup 117}Sn and {sup 116}Sn are strongly enhanced from the threshold behavior expected for L = 1 neutron emissions after E1 photoexcitation. This suggests the presence of extra gamma-ray strength in the low-energy tail of the giant dipole resonance. The present cross sections were analyzed together with radiative neutron capture cross sections for {sup 116}Sn within the framework of the statistical model calculation. It is shown that the extra gamma-ray strength can be interpreted as pygmy E1 resonance which was previously reported in the nuclear resonance fluorescence experiment for {sup 116}Sn and {sup 124}Sn.

  13. 3 GeV Injector Design Handbook

    SciTech Connect (OSTI)

    Wiedemann, H.; /SLAC, SSRL

    2009-12-16

    This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

  14. GE Progress Includes 140 Things We Made Yesterday | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Power of Networks in an Age of Gas Peter Evans, PhD Director Global Strategy & Analytics General Electric 2013 EIA Energy Conference June 17-18, 2013 Washington, DC 2 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Sources of competitive advantage Thomas Edison - GE Founder Natural endowments Creative endowments The U.S. is rich in both 3 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Physical and digital infrastructure Advantage of

  15. Charging properties of cassiterite (alfa-SnO2) surfaces

    SciTech Connect (OSTI)

    Rosenqvist, Jorgen K; Machesky, Michael L.; Vlcek, L.; Cummings, Peter T; Wesolowski, David J

    2009-01-01

    The acid-base properties of cassiterite (alfa-SnO2) surfaces at 10 50 C were studied using potentiometric titrations of powder suspensions in aqueous NaCl and RbCl media. The proton sorption isotherms exhibited common intersection points in the pH-range 4.0 to 4.5 at all conditions and the magnitude of charging was similar but not identical in NaCl and RbCl. The hydrogen bonding configuration at the oxide-water interface, obtained from classical Molecular Dynamics (MD) simulations, was analyzed in detail and the results were explicitly incorporated in calculations of protonation constants for the reactive surface sites using the revised MUSIC model. The calculations indicated that the terminal SnOH2 group is more acidic than the bridging Sn2OH group, with protonation constants (log KH) of 3.60 and 5.13 at 25 C, respectively. This is contrary to the situation on the isostructural alfa-TiO2 (rutile), apparently due to the difference in electronegativity between Ti and Sn. MD simulations and speciation calculations indicated considerable differences in the speciation of Na+ and Rb+, despite the similarities in overall charging. Adsorbed sodium ions are almost exclusively found in bidentate surface complexes, while adsorbed rubidium ions form comparable amounts of bidentate and tetradentate complexes. Also, the distribution of adsorbed Na+ between the different complexes shows a considerable dependence on surface charge density (pH), while the distribution of adsorbed Rb+ is almost independent of pH. A Surface Complexation Model (SCM) capable of accurately describing both the measured surface charge and the MD predicted speciation of adsorbed Na+/Rb+ was formulated. According to the SCM, the deprotonated terminal group (SnOH-0.40) and the protonated bridging group (Sn2OH+0.36) dominate the surface speciation over the entire pH-range (2.7 10), illustrating the ability of positively and negatively charged surface groups to coexist. Complexation of the medium cations increases significantly with increasing negative surface charge and at pH 10 roughly 40 percent of the terminal sites are predicted to form cation complexes, while anion complexation is minor throughout the studied pH-range.

  16. GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

    SciTech Connect (OSTI)

    Bom, N. M.; Soares, G. V.; Hartmann, S.; Bordin, A.; Radtke, C.

    2014-10-06

    Deuterium (D) incorporation in GeO{sub 2}/Ge structures following D{sub 2} annealing was investigated. Higher D concentrations were obtained for GeO{sub 2}/Ge samples in comparison to their SiO{sub 2}/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D{sub 2} constitute defect sites for D incorporation, analogous to defects at the SiO{sub 2}/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D{sub 2} annealing, especially in the high temperature regime of the present study (>450?C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO{sub 2}/Si counterparts.

  17. Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

    SciTech Connect (OSTI)

    Haegel, N.M.

    1985-11-01

    An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10/sup 8/ photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H/sub 2/ atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs.

  18. Ion beam synthesis of SiGe alloy layers

    SciTech Connect (OSTI)

    Im, Seongil

    1994-05-01

    Procedures required for minimizing structural defects generated during ion beam synthesis of SiGe alloy layers were studied. Synthesis of 200 mm SiGe alloy layers by implantation of 120-keV Ge ions into <100> oriented Si wafers yielded various Ge peak concentrations after the following doses, 2{times}10{sup 16}cm{sup {minus}2}, 3{times}10{sup 16}cm{sup {minus}2} (mid), and 5{times}10{sup 16}cm{sup {minus}2} (high). Following implantation, solid phase epitaxial (SPE) annealing in ambient N2 at 800C for 1 hr. resulted in only slight redistribution of the Ge. Two kinds of extended defects were observed in alloy layers over 3{times}l0{sup 16}cm{sup {minus}2}cm dose at room temperature (RT): end-of-range (EOR) dislocation loops and strain-induced stacking faults. Density of EOR dislocation loops was much lower in alloys produced by 77K implantation than by RT implantation. Decreasing the dose to obtain 5 at% peak Ge concentration prevents strain relaxation, while those SPE layers with more than 7 at% Ge peak show high densities of misfit- induced stacking faults. Sequential implantation of C following high dose Ge implantation (12 at% Ge peak concentration in layer) brought about a remarkable decrease in density of misfit-induced stacking faults. For peak implanted C > 0.55 at%, stacking fault generation in the epitaxial layer was suppressed, owing to strain compensation by C atoms in the SiGe lattice. A SiGe alloy layer with 0.9 at% C peak concentration under a 12 at% Ge peak exhibited the best microstructure. Results indicate that optimum Ge/C ratio for strain compensation is between 11 and 22. The interface between amorphous and regrown phases (a/c interface) had a dramatic morphology change during its migration to the surface. Initial <100> planar interface decomposes into a <111> faceted interface, changing the growth kinetics; this is associated with strain relaxation by stacking fault formation on (111) planes in the a/c interface.

  19. Synthesis of SnO{sub 2} Nanoparticles Using Ultrasonication

    SciTech Connect (OSTI)

    Majumdar, Sanhita; Devi, P. Sujatha

    2010-10-04

    The use of ultrasonic energy for chemical synthesis has recently become an interesting and growing area of research. Using this form of energy, we have synthesized nanoparticles of SnO{sub 2}(8-30 nm) at room temperature by a sonication assisted precipitation technique. In order to understand the effect of ultrasonic energy on particle size and their distribution, the precipitation time was varied during the preparation. A sonication time of 3 h was found to be optimum to produce SnO{sub 2} nanoparticles having size below 10 nm. We found that a gradual increase of the sonication time gradually decreases the particle size with interesting morphology and increased surface area. The butane sensing properties of the synthesized powders exhibited a direct influence of the sonication time on the sensing properties. A 3 h sonicated sample, exhibited a maximum response of around 98.88% towards 5000 ppm butane at 450 deg. C with a fast recovery time.

  20. Optical properties of SnO{sub 2} nanoparticles

    SciTech Connect (OSTI)

    Koshy, Jiji Chandran, Anoop Samuel, Soosen George, K. C.

    2014-10-15

    SnO{sub 2} nanoparticles were successfully prepared by a sol-gel technique. The samples were analyzed by XRD, SEM, TEM, UV, Photoluminescence (PL) and Raman studies. The obtained product has a particle size of 12 nm with absorption peak at 278 nm. The absorption peak shows a blue shift when compared to the bulk due to quantum confinement. The FTIR spectrum of the prepared SnO{sub 2} nanoparticles exhibits a broad absorption band between 3100 and 3400 cm{sup −1} as well as a narrower peak at 1600 cm{sup −1}. The PL spectrum shows two strong peaks at 420 and 484 nm and broad peak between 430 and 470 nm.

  1. GRB 130427A AND SN 2013cq: A MULTI-WAVELENGTH ANALYSIS OF AN INDUCED GRAVITATIONAL COLLAPSE EVENT

    SciTech Connect (OSTI)

    Ruffini, R.; Wang, Y.; Enderli, M.; Muccino, M.; Kovacevic, M.; Bianco, C. L.; Pisani, G. B.; Rueda, J. A. [Dip. di Fisica and ICRA, Sapienza Universit di Roma, Piazzale Aldo Moro 5, I-00185 Rome (Italy); Penacchioni, A. V., E-mail: yu.wang@icranet.org [ICRANet-Rio, Centro Brasileiro de Pesquisas Fisicas, Rua Dr. Xavier Sigaud 150, Rio de Janeiro, RJ 22290-180 (Brazil)

    2015-01-01

    We performed a data analysis of the observations by the Swift, NuStar, and Fermi satellites in order to probe the induced gravitational collapse (IGC) paradigm for gamma-ray bursts (GRBs) associated with supernovae (SNe) in the terra incognita of GRB 130427A. We compare our data analysis with those in the literature. We have verified that GRB 130427A conforms to the IGC paradigm by examining the power law behavior of the luminosity in the early 10{sup 4} s of the XRT observations. This has led to the identification of the four different episodes of the binary driven hypernovae (BdHNe) and to the prediction, on 2013 May 2, of the occurrence of SN 2013cq, which was also observed in the optical band on 2013 May 13. The exceptional quality of the data has allowed the identification of novel features in Episode 3 including: (1) the confirmation and the extension of the existence of the recently discovered nested structure in the late X-ray luminosity in GRB 130427A, as well as the identification of a spiky structure at 10{sup 2} s in the cosmological rest-frame of the source; (2) a power law emission of the GeV luminosity light curve and its onset at the end of Episode 2; and (3) different Lorentz ? factors for the emitting regions of the X-ray and GeV emissions in this Episode 3. These results make it possible to test the details of the physical and astrophysical regimes at work in the BdHNe: (1) a newly born neutron star and the supernova ejecta, originating in Episode 1; (2) a newly formed black hole originating in Episode 2; and (3) the possible interaction among these components, observable in the standard features of Episode 3.

  2. Diameter dependent thermoelectric properties of individual SnTe nanowires

    SciTech Connect (OSTI)

    Xu, E. Z.; Li, Z.; Martinez, J. A.; Sinitsyn, N.; Htoon, H.; Li, Nan; Swartzentruber, B.; Hollingsworth, J. A.; Wang, Jian; Zhang, S. X.

    2015-01-15

    The lead-free compound tin telluride (SnTe) has recently been suggested to be a potentially promising thermoelectric material because of its similar electronic band structure as the well-known lead telluride. Here we report on the first thermoelectric study of individual single crystalline SnTe nanowires (NWs) with different diameters ranging from ~200 to ~1000 nm. Measurements of thermopower S, electrical conductivity σ, and thermal conductivity κ were carried out on the same nanowires over a temperature range of 25 - 300 K. While σ does not show a strong diameter dependence, the thermopower increases by a factor of 2 when the nanowire diameter is decreased from 1000 nm to 200 nm. The thermal conductivities of the measured NWs are only about half of that of the bulk SnTe, which may arise from the enhanced phonon-grain boundary and phonon-defect scatterings. Temperature dependent figure-of-merit ZT was determined and the maximum value at room temperature is ~3 times higher than what was obtained in bulk samples of comparable carrier density.

  3. Diameter dependent thermoelectric properties of individual SnTe nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xu, E. Z.; Li, Z.; Martinez, J. A.; Sinitsyn, N.; Htoon, H.; Li, Nan; Swartzentruber, B.; Hollingsworth, J. A.; Wang, Jian; Zhang, S. X.

    2015-01-15

    The lead-free compound tin telluride (SnTe) has recently been suggested to be a potentially promising thermoelectric material because of its similar electronic band structure as the well-known lead telluride. Here we report on the first thermoelectric study of individual single crystalline SnTe nanowires (NWs) with different diameters ranging from ~200 to ~1000 nm. Measurements of thermopower S, electrical conductivity σ, and thermal conductivity κ were carried out on the same nanowires over a temperature range of 25 - 300 K. While σ does not show a strong diameter dependence, the thermopower increases by a factor of 2 when the nanowiremore » diameter is decreased from 1000 nm to 200 nm. The thermal conductivities of the measured NWs are only about half of that of the bulk SnTe, which may arise from the enhanced phonon-grain boundary and phonon-defect scatterings. Temperature dependent figure-of-merit ZT was determined and the maximum value at room temperature is ~3 times higher than what was obtained in bulk samples of comparable carrier density.« less

  4. Computational discovery of ferromagnetic semiconducting single-layer CrSnTe3

    SciTech Connect (OSTI)

    Zhuang, Houlong L.; Xie, Yu; Kent, P. R. C.; Ganesh, P.

    2015-07-06

    Despite many single-layer materials being reported in the past decade, few of them exhibit magnetism. Here we perform first-principles calculations using accurate hybrid density functional methods (HSE06) to predict that single-layer CrSnTe3 (CST) is a ferromagnetic semiconductor, with band gaps of 0.9 and 1.2 eV for the majority and minority spin channels, respectively. We determine the Curie temperature as 170 K, significantly higher than that of single-layer CrSiTe3 (90K) and CrGeTe3 (130 K). This is due to the enhanced ionicity of the Sn-Te bond, which in turn increases the superexchange coupling between the magnetic Cr atoms. We further explore the mechanical and dynamical stability and strain response of this single-layer material for possible epitaxial growth. Lastly, our study provides an intuitive approach to understand and design novel single-layer magnetic semiconductors for a wide range of spintronics and energy applications.

  5. GE Showcases Industrial Internet Innovations and Promotes Win-Win

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Cooperation at 2015 TECHfest | GE Global Research Showcases Industrial Internet Innovations and Promotes Win-Win Cooperation at 2015 TECHfest Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Showcases Industrial Internet Innovations and Promotes Win-Win Cooperation at 2015 TECHfest GE China Technology Center teams

  6. Data Science Makes Trains More Efficient | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Data Science Makes Trains More Efficient Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Data Science Makes Trains More Efficient In this Special Report, GE's Creator-in-Residence, Sally LePage, talks to GE Global Research's Pierino Bonanni about the GE technology that is making its locomotives more fuel efficient than

  7. Synthesis, NMR spectra, and structure of rhodium hydride complexes with Rh-Sn bonds

    SciTech Connect (OSTI)

    Krut'ko, B.P.; Permin, A.B.; Petrosyan, V.S.; Reutov, O.A.

    1985-06-20

    The authors study the hydride complexes using Sn 119 and H 1 NMR spectroscopy. The spectra were taken in a pulse mode on a Varian FT-80A spectrometer equipped with a wideband system at 29.66 and 79.54 MHz. The Sn 119 and H 1 NMR spectral parameters for a solution of the complex (Bu/sub 4/N)/sub 3/ (HRh(SnCl/sub 3/)/sub 5/) in CD/sub 3/CN are shown, the spectra show that the (HRh(SnCl/sub 3/)/sub 5/)/sup 3 -/ anion has octahedral structure with four equatorial and one axial Rh-Sn bonds. New rhodium hydride complexes with general formula (R/sub 4/N)/sub 3/(HRh(SnCl/sub 3/)/sub 5/) were synthesized.

  8. Charge transfer and mobility enhancement at CdO/SnTe heterointerfaces

    SciTech Connect (OSTI)

    Nishitani, Junichi; Yu, Kin Man; Walukiewicz, Wladek

    2014-09-29

    We report a study of the effects of charge transfer on electrical properties of CdO/SnTe heterostructures. A series of structures with variable SnTe thicknesses were deposited by RF magnetron sputtering. Because of an extreme type III band offset with the valence band edge of SnTe located at 1.5?eV above the conduction band edge of CdO, a large charge transfer is expected at the interface of the CdO/SnTe heterostructure. The electrical properties of the heterostructures are analyzed using a multilayer charge transport model. The analysis indicates a large 4-fold enhancement of the CdO electron mobility at the interface with SnTe. The mobility enhancement is attributed to reduction of the charge center scattering through neutralization of the donor-like defects responsible for the Fermi level pinning at the CdO/SnTe interface.

  9. Bifacial solar cell with SnS absorber by vapor transport deposition

    SciTech Connect (OSTI)

    Wangperawong, Artit; Hsu, Po-Chun; Yee, Yesheng; Herron, Steven M.; Clemens, Bruce M.; Cui, Yi; Bent, Stacey F.

    2014-10-27

    The SnS absorber layer in solar cell devices was produced by vapor transport deposition (VTD), which is a low-cost manufacturing method for solar modules. The performance of solar cells consisting of Si/Mo/SnS/ZnO/indium tin oxide (ITO) was limited by the SnS layer's surface texture and field-dependent carrier collection. For improved performance, a fluorine doped tin oxide (FTO) substrate was used in place of the Mo to smooth the topography of the VTD SnS and to make bifacial solar cells, which are potentially useful for multijunction applications. A bifacial SnS solar cell consisting of glass/FTO/SnS/CdS/ZnO/ITO demonstrated front- and back-side power conversion efficiencies of 1.2% and 0.2%, respectively.

  10. Breaking Ground for GE Oil & Gas Tech Center|GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Announces New Technology Partnership with Devon Energy at Global Research Oil & Gas Technology Center in Oklahoma City Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Announces New Technology Partnership with Devon Energy at Global Research Oil & Gas Technology Center in Oklahoma City $125M global hub to

  11. GE Awarded DOE Funding to Pilot Carbon Capture Technology | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Awarded DOE Project to Pilot CO2 Capture Technology for Power Plants Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Awarded DOE Project to Pilot CO2 Capture Technology for Power Plants Same class of ingredients found in hair conditioners and fabric softeners could hold key to washing out CO2 from Power

  12. GE Develops High Water Recovery Technology in China | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Develops High Water Recovery Technology in China Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Develops High Water Recovery Technology in China Technology aims to boost development of China's household water purification industry SHANGHAI, September. 17, 2015 - A team of scientists led by the Coating and Membrane

  13. GE partners with 'Girls Who Code' for summer program | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Partners with 'Girls Who Code' for Summer Immersion Program to Help Close the Gender Gap in Tech Sector Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Partners with 'Girls Who Code' for Summer Immersion Program to Help Close the Gender Gap in Tech Sector Aimed at equipping girls with skills to explore Science, Tech,

  14. GE Opens New Global R&D Center in Brazil - GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Opens New Global R&D Center in Brazil; Working with Petrobras and BG Group to develop advanced technologies for oil and gas processing on the seabed Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Opens New Global R&D Center in Brazil; Working with Petrobras and BG Group to develop advanced technologies for

  15. GE partners with Matthew Dear to create "Drop Science" | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Partners with Matthew Dear to Create "Drop Science" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Partners with Matthew Dear to Create "Drop Science" Every machine has its own acoustic signature - a precise frequency that indicates whether that machine is operating at peak

  16. GE, NASA Work to Relaunch Supersonic Air Travel | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Awarded 2- year $599,000 program to reduce engine noise during takeoffs and landings NISKAYUNA, NY - JUNE 10, 2015 - Scientists

  17. GE funds initiative to support STEM initiatives in Oklahoma ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    STEM Empowers OK: Initiative to enrich STEM education in Oklahoma On April 21, 2015, GE announced a grant to the state of Oklahoma to enhance STEM education initiatives. Jeff ...

  18. Electronic and magnetic properties of Si substituted Fe3Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shanavas, Kavungal Veedu; McGuire, Michael A.; Parker, David S.

    2015-09-23

    Using first principles calculations we studied the effect of Si substitution in the hexagonal Fe3Ge. We find the low temperature magnetic anisotropy in this system to be planar and originating mostly from the spin-orbit coupling in Fe-d states. Reduction of the unitcell volume reduces the in-plane magnetic anisotropy, eventually turning it positive which reorients the magnetic moments to the axial direction. We find that substituting Ge with the smaller Si ions also reduces the anisotropy, potentially enhancing the region of stability of the axial magnetization, which is beneficial for magnetic applications. Thus our experimental measurements on samples of Fe3Ge1–xSix confirmmore » these predictions and show that substitution of about 6% of the Ge with Si increases by approximately 35 K the temperature range over which anisotropy is uniaxial.« less

  19. GE Progetti 3i Spa | Open Energy Information

    Open Energy Info (EERE)

    Progetti 3i Spa Jump to: navigation, search Name: GE Progetti & 3i Spa Place: Narni, Italy Sector: Renewable Energy Product: Italy-based engineering firm that is involved with the...

  20. Bringing a Digital Mindset to Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    a theme here? This week, GE joined the UI LABS-led Digital Manufacturing Design and Innovation Institute (DMDII) in announcing the creation of an open-source platform that will...

  1. Technology makes reds "pop" in LED displays | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reveal and Energy Smart consumer brands, and Evolve(tm), GTx(tm), Immersion(tm), Infusion(tm), Lumination(tm), Albeo(tm) and Tetra commercial brands, all trademarks of GE....

  2. The role of surface passivation in controlling Ge nanowire faceting

    SciTech Connect (OSTI)

    Gamalski, A. D.; Tersoff, J.; Kodambaka, S.; Zakharov, D. N.; Ross, F. M.; Stach, E. A.

    2015-11-05

    In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. Furthermore, these results illustrate the essential roles of the precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, <111>-oriented nanowires.

  3. "Big Picture" Process Modeling Tools |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Using process modeling tools to attain cost-effective results for GE customers Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click ...

  4. Pattern Recognition and Image Analysis in Materials | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in new window) Pattern Recognition and Image Analysis in Materials Jim Grande 2012.09.25 Hi I'm Jim Grande and I've been working at GE Global Research in Niskayuna for over 33...

  5. Steve Duclos, Chief Scientist, GE Global Research, Research Priorities...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    SessionC3Duclos-GE.pdf More Documents & Publications Trans-Atlantic Workshop on Rare Earth Elements and Other Critical Materials for a Clean Energy Future Iowa lab gets...

  6. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect (OSTI)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; Kalinin, Sergei V; Lai, Keji; Demkov, Alexander A.

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  7. Testimonials - Partnerships in Fuel Cells - GE Global Research...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    "Mark Little, Senior Vice President, GE Global Research" and footage of a man in a suit. ... A good example of this today is solid-oxide fuel cells. Footage of a photo of a man in ...

  8. The role of surface passivation in controlling Ge nanowire faceting

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gamalski, A. D.; Tersoff, J.; Kodambaka, S.; Zakharov, D. N.; Ross, F. M.; Stach, E. A.

    2015-11-05

    In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. Furthermore, these results illustrate the essential roles of themore » precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, <111>-oriented nanowires.« less

  9. Notrees 1B (GE Energy) Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    W 60,000,000,000 mW 0.06 GW Number of Units 40 Commercial Online Date 2009 Wind Turbine Manufacturer GE Energy References Wind Energy Market Intelligence1 Loading map......

  10. Governor Cuomo, GE Announce Power Electronics Manufacturing Consortium

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Governor Cuomo Announces 100 Businesses Led by GE to Join 500 Million Partnership with ... Click to share on Tumblr (Opens in new window) Governor Cuomo Announces 100 Businesses Led ...

  11. GE, Clean Energy Fuels Partner to Expand Natural Gas Highway...

    Open Energy Info (EERE)

    GE, Clean Energy Fuels Partner to Expand Natural Gas Highway Home > Groups > Clean and Renewable Energy Jessi3bl's picture Submitted by Jessi3bl(15) Member 16 December, 2012 -...

  12. Scientists Develop Sensors Based on Butterfly Wings | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New Bio-inspired Design from GE reported in Nature Communications Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share ...

  13. How Will We Live Forever? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    angCaicloudcomputingV Robots and Predix make Beijing's CT factory brilliant IMG0475 Innovation 247: We're Always Open 1-2-111-v-ge-getfit-balanced-lifestyle A Balanced...

  14. Invention Factory: How Will Robots Evolve | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in your browser. You Might Also Like direct write2square The GE Store for Technology is Open for Business IMG0475 Innovation 247: We're Always Open shutterstock316484033...

  15. Gold-rich R3Au7Sn3: Establishing the interdependence between electronic

    Office of Scientific and Technical Information (OSTI)

    features and physical properties (Journal Article) | DOE PAGES Gold-rich R3Au7Sn3: Establishing the interdependence between electronic features and physical properties Title: Gold-rich R3Au7Sn3: Establishing the interdependence between electronic features and physical properties Two new polar intermetallic compounds Y3Au7Sn3 (I) and Gd3Au7Sn3 (II) have been synthesized and their structures have been determined by single crystal X-ray diffraction (P63/m; Z = 2, a = 8.148(1)/8.185(3), and c =

  16. Hubble Residuals of Nearby SN Ia Are Correlated with Host Galaxy Masses

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Hubble Residuals of Nearby SN Ia Are Correlated with Host Galaxy Masses Citation Details In-Document Search Title: Hubble Residuals of Nearby SN Ia Are Correlated with Host Galaxy Masses From Sloan Digital Sky Survey u{prime} g{prime} r{prime} i{prime} z{prime} imaging, we estimate the stellar masses of the host galaxies of 70 low redshift SN Ia (0.015 < z < 0.08) from the hosts absolute luminosities and mass-to-light ratios. These nearby SN were

  17. Gyromagnetic ratios of excited states and nuclear structure near {sup 132}Sn

    SciTech Connect (OSTI)

    Stuchbery, Andrew E.

    2014-11-11

    Several g-factor measurements have been performed recently on nuclei near the neutron-rich, double-magic nucleus {sup 132}Sn. The focus here is on {sup 134}Te, the N = 82 isotone which has two protons added to {sup 132}Sn. The electromagnetic properties of {sup 134}Te are examined. Comparisons are made with other nuclei that have two protons outside a double-magic core. The extent to which {sup 132}Sn is an inert core is discussed based on these comparisons. The electromagnetic properties of the N = 82 isotones from {sup 132}Sn to {sup 146}Gd are also discussed.

  18. SN 2008D: A WOLF-RAYET EXPLOSION THROUGH A THICK WIND

    SciTech Connect (OSTI)

    Svirski, Gilad; Nakar, Ehud

    2014-06-10

    Supernova (SN) 2008D/XRT 080109 is considered to be the only direct detection of a shock breakout from a regular SN to date. While a breakout interpretation was favored by several papers, inconsistencies remain between the observations and current SN shock breakout theory. Most notably, the duration of the luminous X-ray pulse is considerably longer than expected for a spherical breakout through the surface of a type Ibc SN progenitor, and the X-ray radiation features, mainly its flat spectrum and its luminosity evolution, are enigmatic. We apply a recently developed theoretical model for the observed radiation from a Wolf-Rayet SN exploding through a thick wind and show that it naturally explains all of the observed features of SN 2008D X-ray emission, including the energetics, the spectrum, and the detailed luminosity evolution. We find that the inferred progenitor and SN parameters are typical for an exploding Wolf-Rayet. A comparison of the wind density found at the breakout radius and the density at much larger radii, as inferred by late radio observations, suggests an enhanced mass-loss rate taking effect about 10days prior to the SN explosion. This finding joins accumulating evidence for a possible late phase in the stellar evolution of massive stars, involving vigorous mass loss a short time before the SN explosion.

  19. Electrochemical synthesis of Nb3Sn coatings on Cu substrates

    SciTech Connect (OSTI)

    Franz, S.; Barzi, E.; Turrioni, D.; Glionna, L.; Bestetti, M.

    2015-09-11

    This study aims at contributing to the development of superconducting Nb3Sn thin films for possible applications, as for instance in superconducting radio frequency (SRF) cavities. The synthesis of Nb-Sn coatings was carried out on copper substrates by electrodeposition from 1-Butyl-3-methylimidazolium chloride (BMIC) ionic liquids containing SnCl2 and NbCl5. Cyclic voltammetric curves were recorded to identify the reduction potentials of Nb and Sn ionic species. Electrodeposition was performed at 40 and 400 mA/cm2 and 130°C. The CV demonstrated that BMIC has a suitable potential window for co-deposition of Nb and Sn. The electrodeposited coatings showed a cubic Nb3Sn phase with (211) preferred orientation, a disordered orthorhombic NbSn2 phase and Sn-Cu phases. Film thickness was from 200 to 750 nm. These results suggest that electrodeposition of Nb-Sn coatings on copper substrates could be a suitable route to one day replace the current expensive Nb SRF cavities.

  20. Gold-rich R3Au7Sn3: Establishing the interdependence between electronic

    Office of Scientific and Technical Information (OSTI)

    features and physical properties (Journal Article) | SciTech Connect Journal Article: Gold-rich R3Au7Sn3: Establishing the interdependence between electronic features and physical properties Citation Details In-Document Search Title: Gold-rich R3Au7Sn3: Establishing the interdependence between electronic features and physical properties Two new polar intermetallic compounds Y3Au7Sn3 (I) and Gd3Au7Sn3 (II) have been synthesized and their structures have been determined by single crystal X-ray

  1. Structural, optical and ethanol sensing properties of Cu-doped SnO{sub 2} nanowires

    SciTech Connect (OSTI)

    Johari, Anima Sharma, Manish; Johari, Anoopshi; Bhatnagar, M. C.

    2014-04-24

    In present work, one-dimensional nanostructure of Cu-doped Tin oxide (SnO{sub 2}) was synthesized by using thermal evaporation method in a tubular furnace under Nitrogen (N{sub 2}) ambience. The growth was carried out at atmospheric pressure. SEM and TEM images reveal the growth of wire-like nanostructures of Cu-doped SnO{sub 2} on Si substrate. The XRD analysis confirms that the synthesized SnO{sub 2} nanowires have tetragonal rutile structure with polycrystalline nature and X-ray diffraction pattern also showed that Cu gets incorporated into the SnO{sub 2} lattice. EDX spectra confirm the doping of Cu into SnO{sub 2} nanowires and atomic fraction of Cu in nanowires is ∼ 0.5 at%. The Vapor Liquid Solid (VLS) growth mechanism for Cu-doped SnO{sub 2} nanowires was also confirmed by EDX spectra. The optical properties of as grown Cu-doped SnO{sub 2} nanowires were studied by using UV-vis spectra which concludes the band gap of about 3.7 eV. As synthesized single Cu-doped SnO{sub 2} nanowire based gas sensor exhibit relatively good performance to ethanol gas. This sensing behaviour offers a suitable application of the Cu-doped SnO{sub 2} nanowire sensor for detection of ethanol gas.

  2. Alpha Emission Near 100Sn and the Termination of the rp Process

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Alpha Emission Near 100 Sn and the Termination of the rp Process The astrophysical rp-process is thought to reach a termination point in the region of 100 Sn, via the Sn(p,γ)⟶Sb(p,γ)⟶Te(γ,α) cycle, due to changing mass surface above the closed Z=50 shell. By measuring the decay properties of nuclei in this region, information can be provided to determine the actual endpoint for the rp-process, as well as measure single particle states near 100 Sn. We have identified a small alpha branch

  3. ARM - VAP Product - mmcrmode3ge200309091cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Productsmmcrmodemmcrmode3ge200309091cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027343 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200309091CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments Active Dates 2003.09.27 - 2004.08.10

  4. ARM - VAP Product - mmcrmode3ge200804181cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Productsmmcrmodemmcrmode3ge200804181cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027350 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200804181CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments, 20080418 version Active Dates 2008.04.18 - 2011.01.04

  5. Advanced Technology & Discovery at Niskayuna | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technology & Discovery at Niskayuna Technology & Discovery at Niskayuna Capture the momentum behind leading-edge technologies from advanced manufacturing to supercomputing at GE's research headquarters. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Featured Technologies Controls Controls at GE are used in

  6. Arc Vault Significantly Reduces Electrical Hazards | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Arc Vault Significantly Reduces Electrical Hazards Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Arc Vault Significantly Reduces Electrical Hazards GE Global Research 2012.05.01 Recently, technology developed at GE Global Research received high praise from industry leaders for its ability to shield industrial -

  7. AC transport in p-Ge/GeSi quantum well in high magnetic fields

    SciTech Connect (OSTI)

    Drichko, I. L.; Malysh, V. A.; Smirnov, I. Yu.; Golub, L. E.; Tarasenko, S. A.; Suslov, A. V.; Mironov, O. A.; Kummer, M.; Känel, H. von

    2014-08-20

    The contactless surface acoustic wave technique is implemented to probe the high-frequency conductivity of a high-mobility p-Ge/GeSi quantum well structure in the regime of integer quantum Hall effect (IQHE) at temperatures 0.3–5.8 K and magnetic fields up to 18 T. It is shown that, in the IQHE regime at the minima of conductivity, holes are localized and ac conductivity is of hopping nature and can be described within the “two-site” model. The analysis of the temperature and magnetic-field-orientation dependence of the ac conductivity at odd filing factors enables us to determine the effective hole g-factor, |g{sub zz}|≈4.5. It is shown that the in-plane component of the magnetic field leads to a decrease in the g-factor as well as increase in the cyclotron mass, which is explained by orbital effects in the complex valence band of germanium.

  8. Properties of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters

    SciTech Connect (OSTI)

    Dong, Yi; Rehman, Habib ur; Springborg, Michael

    2015-01-22

    The structures of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters with up to 44 atoms have been determined theoretically using an unbiased structure-optimization method in combination with a parametrized, density-functional description of the total energy for a given structure. By analyzing the total energy in detail, particularly stable clusters are identified. Moreover, general trends in the structures are identified with the help of specifically constructed descriptors.

  9. Probing the Failure Mechanism of SnO{sub 2} Nanowires for Sodium-Ion Batteries

    SciTech Connect (OSTI)

    Gu, Meng; Kushima, Akihiro; Shao, Yuyan; Zhang, Ji-Guang; Liu, Jun; Browning, Nigel D; Li, Ju; Wang, Chongmin

    2013-09-30

    Nonlithium metals such as sodium have attracted wide attention as a potential charge carrying ion for rechargeable batteries. Using in situ transmission electron microscopy in combination with density functional theory calculations, we probed the structural and chemical evolution of SnO{sub 2} nanowire anodes in Na-ion batteries and compared them quantitatively with results from Li-ion batteries (Huang, J. Y.; et al. Science 2010, 330, 1515-1520). Upon Na insertion into SnO{sub 2}, a displacement reaction occurs, leading to the formation of amorphous Na{sub x}Sn nanoparticles dispersed in Na{sub 2}O matrix. With further Na insertion, the Na{sub x}Sn crystallized into Na{sub 15}Sn{sub 4} (x = 3.75). Upon extraction of Na (desodiation), the Na{sub x}Sn transforms to Sn nanoparticles. Associated with the dealloying, pores are found to form, leading to a structure of Sn particles confined in a hollow matrix of Na{sub 2}O. These pores greatly increase electrical impedance, therefore accounting for the poor cyclability of SnO{sub 2}. DFT calculations indicate that Na{sup +} diffuses 30 times slower than Li{sup +} in SnO{sub 2}, in agreement with in situ TEM measurement. Insertion of Na can chemomechanically soften the reaction product to a greater extent than in lithiation. Therefore, in contrast to the lithiation of SnO{sub 2} significantly less dislocation plasticity was seen ahead of the sodiation front. This direct comparison of the results from Na and Li highlights the critical role of ionic size and electronic structure of different ionic species on the charge/discharge rate and failure mechanisms in these batteries.

  10. Preparation and characterization of Pd{sub 2}Sn nanoparticles

    SciTech Connect (OSTI)

    Page, Katharine; Schade, Christina S.; Zhang, Jinping; Chupas, Peter J.; Chapman, Karena W.; Proffen, Thomas; Cheetham, Anthony K.; Seshadri, Ram

    2007-12-04

    We report a non-aqueous solution preparation of Pd{sub 2}Sn nanoparticles with sizes near 20 nm. The intermetallic compound with the Co{sub 2}Si structure has been characterized using transmission electron microscopy, Rietveld refinement of synchrotron X-ray and neutron powder diffraction, and real-space pair distribution function analysis of high-energy synchrotron X-ray scattering. We also present a description of the electronic structure of this covalent intermetallic using density functional calculations of the electronic structure.

  11. Uncovering the putative B-star binary companion of the SN 1993J progenitor

    SciTech Connect (OSTI)

    Fox, Ori D.; Filippenko, Alexei V.; Bradley Cenko, S.; Li, Weidong; Parker, Alex H. [Department of Astronomy, University of California, Berkeley, CA 94720-3411, USA. (United States); Azalee Bostroem, K. [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD 21218 (United States); Van Dyk, Schuyler D. [Caltech, Mailcode 314-6, Pasadena, CA 91125 (United States); Fransson, Claes [Department of Astronomy, Oskar Klein Centre, Stockholm University, AlbaNova, SE-106 91 Stockholm (Sweden); Matheson, Thomas [National Optical Astronomy Observatory, 950 North Cherry Avenue, Tucson, AZ 85719-4933 (United States); Chandra, Poonam [National Centre for Radio Astrophysics, Tata Institute of Fundamental Research, Pune University Campus, Ganeshkhind, Pune-411007 (India); Dwarkadas, Vikram [Department of Astronomy and Astrophysics, University of Chicago, 5640 S Ellis Ave, Chicago, IL 60637 (United States); Smith, Nathan, E-mail: ofox@berkeley.edu [Steward Observatory, 933 North Cherry Avenue, Tucson, AZ 85721 (United States)

    2014-07-20

    The Type IIb supernova (SN) 1993J is one of only a few stripped-envelope SNe with a progenitor star identified in pre-explosion images. SN IIb models typically invoke H envelope stripping by mass transfer in a binary system. For the case of SN 1993J, the models suggest that the companion grew to 22 M{sub ?} and became a source of ultraviolet (UV) excess. Located in M81, at a distance of only 3.6 Mpc, SN 1993J offers one of the best opportunities to detect the putative companion and test the progenitor model. Previously published near-UV spectra in 2004 showed evidence for absorption lines consistent with a hot (B2 Ia) star, but the field was crowded and dominated by flux from the SN. Here we present Hubble Space Telescope Cosmic Origins Spectrograph and Wide-Field Camera 3 observations of SN 1993J from 2012, at which point the flux from the SN had faded sufficiently to potentially measure the UV continuum properties from the putative companion. The resulting UV spectrum is consistent with contributions from both a hot B star and the SN, although we cannot rule out line-of-sight coincidences.

  12. SnO{sub 2} films: In-situ template-sacrificial growth and photovoltaic property based on SnO{sub 2}/poly(3-hexyl-thiophene) for hybrid solar cell

    SciTech Connect (OSTI)

    Zhang, Yange; Li, Pinjiang; Xu, Xiaoyun; Wang, Min; Shen, Jinfeng; Zhang, Fujuan; Zheng, Zhi

    2015-10-15

    Highlights: • SnO{sub 2} nanocrystals/thin films were fabricated on ITO glass substrate from preformed SnS thin film as sacrificial template. • The SnO{sub 2} film and SnO{sub 2}/P3HT was characterized by several techniques. • The new hybrid solar cell device was based on the hybrid thin film of SnO{sub 2} NCs and P3HT composites. - Abstract: we described a facile in-situ wet chemical method to prepare SnO{sub 2} thin film on ITO glass substrate from preformed SnS thin film as sacrificial template. The chemical conversion process of SnS to SnO{sub 2} was studied. The SnO{sub 2} film and SnO{sub 2}/P3HT was characterized by several techniques, such as powder X-ray diffract meter (XRD), Raman spectrometer, scanning electron microscope (SEM), atomic force microscope (AFM) and UV–vis spectrophotometer in detail. The new SnO{sub 2}/P3HT hybrid solar cell device showed an open-circuit voltage of 0.185 V, a short-circuit current density of 0.366 mA/cm{sup 2} and a fill factor of 0.247, corresponding to a power conversion efficiency of 0.0167%.

  13. Interfacial hydrothermal synthesis of SnO{sub 2} nanorods towards photocatalytic degradation of methyl orange

    SciTech Connect (OSTI)

    Hou, L.R. Lian, L.; Zhou, L.; Zhang, L.H.; Yuan, C.Z.

    2014-12-15

    Highlights: Efficient interfacial hydrothermal strategy was developed. 1D SnO{sub 2} nanorods as an advanced photocatalyst. SnO{sub 2} nanorods exhibit photocatalytic degradation of the MO. - Abstract: One-dimensional (1D) SnO{sub 2} nanorods (NRs) have been successfully synthesized by means of an efficient interfacial hydrothermal strategy. The resulting product was physically characterized by X-ray powder diffraction, scanning electron microscopy, transmission electron microscope, etc. The as-fabricated SnO{sub 2} NRs exhibited excellent photocatalytic degradation of the methyl orange with high degradation efficiency of 99.3% with only 60 min ultra violet light irradiation. Meanwhile, the 1D SnO{sub 2} NRs exhibited intriguing photostability after four recycles.

  14. The 6 GeV TMD Program at Jefferson Lab

    SciTech Connect (OSTI)

    Puckett, Andrew J.

    2015-01-01

    The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Labs Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  15. Flat Ge-doped optical fibres for food irradiation dosimetry

    SciTech Connect (OSTI)

    Noor, N. Mohd; Jusoh, M. A.; Razis, A. F. Abdull; Alawiah, A.; Bradley, D. A.

    2015-04-24

    Exposing food to radiation can improve hygiene quality, germination control, retard sprouting, and enhance physical attributes of the food product. To provide for food safety, radiation dosimetry in irradiated food is required. Herein, fabricated germanium doped (Ge-doped) optical fibres have been used. The fibres have been irradiated using a gamma source irradiator, doses in the range 1 kGy to 10 kGy being delivered. Using Ge-doped optical fibres of variable size, type and dopant concentration, study has been made of linearity, reproducibility, and fading. The thermoluminescence (TL) yield of the fibres were obtained and compared. The fibres exhibit a linear dose response over the investigated range of doses, with mean reproducibility to within 2.69 % to 8.77 %, exceeding the dose range of all commercial dosimeters used in evaluating high doses for the food irradiation industry. TL fading of the Ge-doped flat fibres has been found to be < 13%.

  16. The 6 GeV TMD Program at Jefferson Lab

    SciTech Connect (OSTI)

    Puckett, Andrew J.

    2015-01-01

    The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  17. Reducing 68Ge Background in Dark Matter Experiments

    SciTech Connect (OSTI)

    Kouzes, Richard T.; Orrell, John L.

    2011-03-01

    Experimental searches for dark matter include experiments with sub-0.5 keV-energy threshold high purity germanium detectors. Experimental efforts, in partnership with the CoGeNT Collaboration operating at the Soudan Underground Laboratory, are focusing on energy threshold reduction via noise abatement, reduction of backgrounds from cosmic ray generated isotopes, and ubiquitous environmental radioactive sources. The most significant cosmic ray produced radionuclide is 68Ge. This paper evaluates reducing this background by freshly mining and processing germanium ore. The most probable outcome is a reduction of the background by a factor of two, and at most a factor of four. A very cost effective alternative is to obtain processed Ge as soon as possible and store it underground for 18 months.

  18. CEBAF SRF Performance during Initial 12 GeV Commissioning

    SciTech Connect (OSTI)

    Bachimanchi, Ramakrishna; Allison, Trent; Daly, Edward; Drury, Michael; Hovater, J; Lahti, George; Mounts, Clyde; Nelson, Richard; Plawski, Tomasz

    2015-09-01

    The Continuous Electron Beam Accelerator Facility (CEBAF) energy upgrade from 6 GeV to 12 GeV includes the installation of eleven new 100 MV cryomodules (88 cavities). The superconducting RF cavities are designed to operate CW at an accelerating gradient of 19.3 MV/m with a QL of 3×107. Not all the cavities were operated at the minimum gradient of 19.3 MV/m with the beam. Though the initial 12 GeV milestones were achieved during the initial commissioning of CEBAF, there are still some issues to be addressed for long term reliable operation of these modules. This paper reports the operational experiences during the initial commissioning and the path forward to improve the performance of C100 (100 MV) modules.

  19. RHIC 100 GeV Polarized Proton Luminosity

    SciTech Connect (OSTI)

    Zhang, S. Y.

    2014-01-17

    A big problem in RHIC 100 GeV proton run 2009 was the significantly lower luminosity lifetime than all previous runs. It is shown in this note that the beam intensity decay in run 2009 is caused by the RF voltage ramping in store. It is also shown that the beam decay is not clearly related to the beam momentum spread, therefore, not directly due to the 0.7m. β* Furthermore, the most important factor regarding the low luminosity lifetime is the faster transverse emittance growth in store, which is also much worse than the previous runs, and is also related to the RF ramping. In 100 GeV proton run 2012a, the RF ramping was abandoned, but the β* was increased to 0.85m, with more than 20% loss of luminosity, which is not necessary. It is strongly suggested to use smaller β* in 100 GeV polarized proton run 2015/2016

  20. Nanotextured Anti-Icing Surfaces | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Demonstrate Promising Anti-icing Nano Surfaces Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today presented new research findings on its nanotextured anti-icing surfaces. In addition to dramatically reducing ice adhesion, these surfaces

  1. The Technology Behind the Locomotives | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Happy Train Day: Celebrating the Bright Minds & Tech Behind GE's Locomotives Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Happy Train Day: Celebrating the Bright Minds & Tech Behind GE's Locomotives Roy Primus 2014.05.10 It may be hard to believe, but in today's world of faster, stronger, smarter and cheaper,

  2. Itinerant magnetism in metallic CuFe2Ge2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shanavas, K. V.; Singh, David J.; He, Ruihua

    2015-03-25

    Theoretical calculations are performed to understand the electronic structure and magnetic properties of CuFe2Ge2. The band structure reveals large electron density N(EF) at the Fermi level suggesting a strong itinerant character of magnetism. The Fermi surface is dominated by two dimensional sheet like structures, with potentially strong nesting between them. The magnetic ground state appears to be ferromagnetic along a and antiferromagnetic in other directions. The results show that CuFe2Ge2 is an antiferromagnetic metal, with similarities to the Fe-based superconductors; such as magnetism with substantial itinerant character and coupling between magnetic order and electrons at the Fermi energy.

  3. Durathon Battery in New Bus | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Battery-Dominant Fuel Cell Bus Uses New Durathon(tm) Battery Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Battery-Dominant Fuel Cell Bus Uses New Durathon(tm) Battery Researchers at GE Global Research, the General Electric Company's (NYSE: GE) technology development arm, have achieved a first step in reducing the

  4. Field-induced quantum criticality in YbAgGe

    SciTech Connect (OSTI)

    Bud'ko, S.; Canfield, P.

    2008-01-01

    YbAgGe is one of the very few stoichiometric, Yb-based, heavy fermion materials that exhibit field-induced quantum criticality. We will present an overview of thermodynamic and transport measurements in YbAgGe single crystals. Moderate magnetic field (45-90 kOe, depending on orientation) suppresses long range magnetic order, giving rise to non-Fermi-liquid behavior followed at higher field by a crossover to a heavy Fermi-liquid. Given the more accessible temperature and field scales, a non-Fermi liquid region rather than point for T {yields} 0 K may be detected.

  5. Butterfly-Inspired Thermal Imaging | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Low-Cost Thermal Imaging Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Butterfly-Inspired Design Enables Low-Cost Thermal Imaging Taking heat detection to a new level of sensitivity and speed, a team of scientists at GE Global Research, the technology development arm for the General Electric Company (NYSE: GE),

  6. High Performance Computing for Manufacturing Parternship | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research GE, US DOE Partner on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, US DOE Partner on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency NISKAYUNA, NY, February 17,

  7. Governor Cuomo, GE Announce Power Electronics Manufacturing Consortium

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Governor Cuomo Announces 100 Businesses Led by GE to Join $500 Million Partnership with State to Develop Next-Generation Power Electronics, Creating Thousands of Jobs in Capital Region and Upstate Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Governor Cuomo Announces 100 Businesses Led by GE to Join $500 Million

  8. Cloud-Based Air Traffic Management Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Works to Bring Air Traffic Management Into "The Cloud" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Works to Bring Air Traffic Management Into "The Cloud" A global leader in avionics and software development, the General Electric Company (NYSE: GE) has embarked on an 18-month project with the

  9. Synthesis and Structure Determination of Ferromagnetic Semiconductors LaAMnSnO6 (A = Sr Ba)

    SciTech Connect (OSTI)

    T Yang; T Perkisas; J Hadermann; M Croft; A Ignatov; M Greenblatt

    2011-12-31

    LaAMnSnO{sub 6} (A = Sr, Ba) have been synthesized by high temperature solid-state reactions under dynamic 1% H{sub 2}/Ar flow. Rietveld refinements on room temperature powder X-ray diffraction data indicate that LaSrMnSnO{sub 6} crystallizes in the GdFeO{sub 3}-structure, with space group Pnma and, combined with transmission electron microscopy, LaBaMnSnO{sub 6} in Imma. Both space groups are common in disordered double-perovskites. The Mn{sup 3+} and Sn{sup 4+} ions whose valence states were confirmed by X-ray absorption spectroscopy, are completely disordered over the B-sites and the BO{sub 6} octahedra are slightly distorted. LaAMnSnO{sub 6} are ferromagnetic semiconductors with a T{sub C} = 83 K for the Sr- and 66 K for the Ba-compound. The title compounds, together with the previously reported LaCaMnSnO{sub 6} provide an interesting example of progression from Pnma to Imma as the tolerance factor increases. An analysis of the relationship between space group and tolerance factor for the series LaAMnMO{sub 6} (A = Ca, Sr, Ba; M = Sn, Ru) provides a better understanding of the symmetry determination for double perovskites.

  10. HIGH-DENSITY CIRCUMSTELLAR INTERACTION IN THE LUMINOUS TYPE IIn SN 2010jl:

    Office of Scientific and Technical Information (OSTI)

    THE FIRST 1100 DAYS (Journal Article) | SciTech Connect DENSITY CIRCUMSTELLAR INTERACTION IN THE LUMINOUS TYPE IIn SN 2010jl: THE FIRST 1100 DAYS Citation Details In-Document Search Title: HIGH-DENSITY CIRCUMSTELLAR INTERACTION IN THE LUMINOUS TYPE IIn SN 2010jl: THE FIRST 1100 DAYS Hubble Space Telescope and ground-based observations of the Type IIn supernova (SN) 2010jl are analyzed, including photometry and spectroscopy in the ultraviolet, optical, and near-IR bands, 26-1128 days after

  11. LATE SPECTRAL EVOLUTION OF THE EJECTA AND REVERSE SHOCK IN SN 1987A

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect LATE SPECTRAL EVOLUTION OF THE EJECTA AND REVERSE SHOCK IN SN 1987A Citation Details In-Document Search Title: LATE SPECTRAL EVOLUTION OF THE EJECTA AND REVERSE SHOCK IN SN 1987A We present observations with the Very Large Telescope and Hubble Space Telescope (HST) of the broad emission lines from the inner ejecta and reverse shock of SN 1987A from 1999 February until 2012 January (days 4381-9100 after explosion). We detect broad lines from H{alpha},

  12. The nature of the first order isostructural transition in GdRhSn (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect SciTech Connect Search Results Journal Article: The nature of the first order isostructural transition in GdRhSn Citation Details In-Document Search Title: The nature of the first order isostructural transition in GdRhSn We present structural, magnetic, thermal, magnetocaloric, and electrical transport properties of polycrystalline GdRhSn. Magnetization data show that it orders antiferromagnetically at TN = 16.2 K. The compound has the ZrNiAl type hexagonal crystal

  13. Nb3Sn quadrupoles in the LHC IR Phase I upgrade

    SciTech Connect (OSTI)

    Zlobin, A.V.; Johnstone, J.A.; Kashikhin, V.V.; Mokhov, N.V.; Rakhno, I.L.; de Maria, R.; Peggs, S.; Robert-Demolaize, G.; Wanderer, P.; /Brookhaven

    2008-06-01

    After a number of years of operation at nominal parameters, the LHC will be upgraded to a higher luminosity. This paper discusses the possibility of using a limited number of Nb{sub 3}Sn quadrupoles for hybrid optics layouts for the LHC Phase I luminosity upgrades with both NbTi and Nb{sub 3}Sn quadrupoles. Magnet parameters and issues related to using Nb{sub 3}Sn quadrupoles including aperture, gradient, magnetic length, field quality, operation margin, et cetera are discussed.

  14. Nb3Sn Quadrupoles in the LHC IR Phase I Upgrade

    SciTech Connect (OSTI)

    Zlobin,A.; Johnstone, J.; Kashikhin, V.; Mokhov, N.; Rakhno, I.; deMaria, R.; Peggs, S.; Robert-Demolaize, F.; Wanderer, P.

    2008-06-23

    After a number of years of operation at nominal parameters, the LHC will be upgraded for higher luminosity. This paper discusses the possibility of using a limited number of Nb{sub 3}Sn quadrupoles for hybrid optics layouts for the LHC Phase I luminosity upgrades with both NbTi and Nb{sub 3}Sn quadrupoles. Magnet parameters and issues related to using Nb{sub 3}Sn quadrupoles including aperture, gradient, magnetic length, field quality, operation margin, et cetera are discussed.

  15. Intercalation of organic molecules into SnS{sub 2} single crystals

    SciTech Connect (OSTI)

    Toh, M.L.; Tan, K.J.; Wei, F.X.; Zhang, K.K.; Jiang, H.; Kloc, C.

    2013-02-15

    SnS{sub 2} is a layered semiconductor with a van der Waals gap separating the covalently bonded layers. In this study, post-synthesis intercalation of donor organic amine molecules, such as ethylenediamine (en), into tin disulfide and secondary intercalation of p-phenylenediamine (PPD) and 1, 5-naphthalenediamine (NDA) into SnS{sub 2e}n have been verified with X-ray diffraction. PPD and NDA did not intercalate directly even during prolonged annealing but replaced en readily if en was already present in the van der Waals gap. The c-lattice dilation is proportional to the intercalant size. Unit cell lattices of intercalated products were determined from the positions of the X-ray diffraction peaks. Optical images taken during the intercalation showed that intercalation progressed from the periphery towards the interior of the crystal. TEM diffraction patterns in the [0 0 1] direction of SnS{sub 2} after intercalation revealed defects and stacking mismatches among the SnS{sub 2} layers caused by the intercalation. UV-Vis absorption studies showed a red shift in the band edge of the SnS{sub 2} material after intercalation. The band edge was 2.2 eV for pristine SnS{sub 2}; after intercalation with en or PPD, the absorbance spectra band edges shifted to approximately 0.7 eV or 0.5 eV, respectively. - Graphical Abstract: SnS{sub 2} single crystals were intercalated with organic amine molecules such as ethylenediamine, phenylenediamine and naphthalenediamine. Absorption studies showed red shift of band edge after intercalation, which was consistent with optical observations. X-ray diffraction indicated lattice dilation in the c-lattice of SnS{sub 2} after intercalation. Highlights: Black-Right-Pointing-Pointer Organic molecules intercalated inhomogenously between covalently bonded SnS{sub 2} layers. Black-Right-Pointing-Pointer Ethylenediamine (en) intercalate directly into SnS{sub 2}. Black-Right-Pointing-Pointer Phenylenediamine (PPD) and naphthalenediamine (NDA) can be intercalated into SnS{sub 2} secondary. Black-Right-Pointing-Pointer In a secondary intercalation the bonds between layers are weakened by direct intercalation of (en). Black-Right-Pointing-Pointer The optical band gap of SnS{sub 2} is reduced due to intercalation.

  16. Results from the first single cell Nb3Sn cavity coatings at Jlab

    SciTech Connect (OSTI)

    Eremeev, Grigory

    2015-09-01

    Nb3Sn is a promising superconducting material for SRF applications and has the potential to exceed the limitations of niobium. We have used the recently commissioned Nb3Sn coating system to investigate Nb3Sn coatings on several single cell cavities by applying the same coating procedure on several different single cells with different history and pre-coating surface preparation. We report on our findings with four 1.5 GHz CEBAF-shape single cell and one 1.3 GHz ILC-shape single cavities that were coated, inspected, and tested.

  17. Test results of a Nb3Al/Nb3Sn subscale magnet for accelerator application

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Test results of a Nb3Al/Nb3Sn subscale magnet for accelerator application Citation Details In-Document Search Title: Test results of a Nb3Al/Nb3Sn subscale magnet for accelerator application The High Energy Accelerator Research Organization (KEK) has been developing a Nb3Al and Nb3Sn subscale magnet to establish the technology for a high-field accelerator magnet. The development goals are a feasibility demonstration for a Nb3Al cable and the technology

  18. PROJECT PROFILE: General Electric – GE Global Research

    Broader source: Energy.gov [DOE]

    GE Global Research and Southwest Research Institute will develop an optimal compression system for a modular supercritical carbon dioxide (sCO2) power block operation in highly transient CSP tower applications. Supercritical carbon dioxide can be used to replace steam in CSP applications and gets a much greater power output at a lower cost.

  19. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; et al

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-lossmore » spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.« less

  20. The JLAB 12 GeV Energy Upgrade of CEBAF

    SciTech Connect (OSTI)

    Harwood, Leigh H.

    2013-12-01

    This presentation should describe the progress of the 12GeV Upgrade of CEBAF at Jefferson Lab. The status of the upgrade should be presented as well as details on the construction, procurement, installation and commissioning of the magnet and SRF components of the upgrade.

  1. 7-GeV Advanced Photon Source Conceptual Design Report

    SciTech Connect (OSTI)

    Not Available

    1987-04-01

    During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

  2. Demand Response Performance of GE Hybrid Heat Pump Water Heater

    SciTech Connect (OSTI)

    Widder, Sarah H.; Parker, Graham B.; Petersen, Joseph M.; Baechler, Michael C.

    2013-07-01

    This report describes a project to evaluate and document the DR performance of HPWH as compared to ERWH for two primary types of DR events: peak curtailments and balancing reserves. The experiments were conducted with GE second-generation “Brillion”-enabled GeoSpring hybrid water heaters in the PNNL Lab Homes, with one GE GeoSpring water heater operating in “Standard” electric resistance mode to represent the baseline and one GE GeoSpring water heater operating in “Heat Pump” mode to provide the comparison to heat pump-only demand response. It is expected that “Hybrid” DR performance, which would engage both the heat pump and electric elements, could be interpolated from these two experimental extremes. Signals were sent simultaneously to the two water heaters in the side-by-side PNNL Lab Homes under highly controlled, simulated occupancy conditions. This report presents the results of the evaluation, which documents the demand-response capability of the GE GeoSpring HPWH for peak load reduction and regulation services. The sections describe the experimental protocol and test apparatus used to collect data, present the baselining procedure, discuss the results of the simulated DR events for the HPWH and ERWH, and synthesize key conclusions based on the collected data.

  3. A new physics era at 12 GeV | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A new physics era at 12 GeV January 29, 2015 In several articles over the past years, we ... These are the harbingers of a new era, that of 12 GeV operations and physics. We have been ...

  4. GE to DOE General Counsel; Re:Request for Comment on Large Capacity...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers GE urges the...

  5. Xianggelila Xian Ge Ji Liu Yu Xia Zhi En Hydroelectric Development...

    Open Energy Info (EERE)

    Ge Ji Liu Yu Xia Zhi En Hydroelectric Development Ltd Jump to: navigation, search Name: Xianggelila Xian Ge Ji Liu Yu Xia Zhi En Hydroelectric Development Ltd Place: Xianggelila...

  6. Beam On Target! - CEBAF Accelerator Achieves 12 GeV Commissioning...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in an experimental hall, recording the first data of the 12 GeV era. The machine sent electrons around the racetrack three times (known as "3-pass" beam), resulting in 6.11 GeV...

  7. GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers

    Broader source: Energy.gov [DOE]

    GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer machines. GE also urges the DOE...

  8. EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source at DOE's Argonne...

  9. Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration High Energy Physics ... 07.01.13 Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration Scientists ...

  10. GE-Prolec CCE Meeting October 19,2010 | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    EERE-2010-BT-CE-0014 GE-Prolec CCE Meeting October 19,2010 More Documents & Publications Microsoft PowerPoint - GE-Prolec CCE Meeting 10192010 Microsoft Word -...

  11. High spin polarization in CoFeMnGe equiatomic quaternary Heusler...

    Office of Scientific and Technical Information (OSTI)

    Title: High spin polarization in CoFeMnGe equiatomic quaternary Heusler alloy We report the structure, magnetic property, and spin polarization of CoFeMnGe equiatomic...

  12. Illuminating the 130 GeV Gamma Line with Continuum Photons (Journal...

    Office of Scientific and Technical Information (OSTI)

    Illuminating the 130 GeV Gamma Line with Continuum Photons Citation Details In-Document Search Title: Illuminating the 130 GeV Gamma Line with Continuum Photons Authors: Cohen,...

  13. Xiang Ge Li La Xian Mai Di He Hydro Power Development Co Ltd...

    Open Energy Info (EERE)

    Xiang Ge Li La Xian Mai Di He Hydro Power Development Co Ltd Jump to: navigation, search Name: Xiang Ge Li La Xian Mai Di He Hydro Power Development Co., Ltd. Place: Yunnan...

  14. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination...

    Office of Scientific and Technical Information (OSTI)

    Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 Citation Details In-Document Search Title: Ultrahigh-pressure polyamorphism in GeO 2 glass with ...

  15. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination...

    Office of Scientific and Technical Information (OSTI)

    in GeO 2 glass with coordination number >6 This content will become publicly available on September 29, 2016 Title: Ultrahigh-pressure polyamorphism in GeO 2 glass with ...

  16. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination...

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Search Results Journal Article: Ultrahigh-pressure polyamorphism in GeO 2 ... Title: Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 ...

  17. Ge doped GaN with controllable high carrier concentration for...

    Office of Scientific and Technical Information (OSTI)

    Ge doped GaN with controllable high carrier concentration for plasmonic applications Citation Details In-Document Search Title: Ge doped GaN with controllable high carrier...

  18. Discovery of GeV Emission tfrom the Circinus Galaxy with the...

    Office of Scientific and Technical Information (OSTI)

    Discovery of GeV Emission tfrom the Circinus Galaxy with the Fermi-Lat Citation Details In-Document Search Title: Discovery of GeV Emission tfrom the Circinus Galaxy with the...

  19. Average and local structure of the Pb-free ferroelectric perovskites (Sr,Sn)TiO3 and (Ba,Ca,Sn)TiO3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Laurita, Geneva; Page, Katharine; Suzuki, Shoichiro; Seshadri, Ram

    2015-12-16

    The characteristic structural off -centering of Pb2+ in oxides, associated with its 6s2 lone pair, allows it to play a dominant role in polar materials, and makes it a somewhat ubiquitous component of ferroelectrics. In this work, we examine the compounds Sr0.9Sn0.1TiO3 and Ba0.79Ca0.16Sn0.05TiO3 using neutron total scattering techniques with data acquired at di erent temperatures. In these compounds, previously reported as ferroelectrics, Sn2+ appears to display some of the characteristics of Pb2+. We compare the local and long-range structures of the Sn2+-substituted compositions to the unsubstituted parent compounds SrTiO3 and BaTiO3. Lastly, we find that even at these smallmore » substitution levels, the Sn2+ lone pairs drive the local ordering behavior, with the local structure of both compounds more similar to the structure of PbTiO3 rather than the parent compounds.« less

  20. Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

    SciTech Connect (OSTI)

    Vanacore, G. M.; Zani, M.; Tagliaferri, A.; Nicotra, G.; Bollani, M.; Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F.; Capellini, G.; Isella, G.; Osmond, J.

    2015-03-14

    The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

  1. Why is GeV physics relevant in the age of the LHC?

    SciTech Connect (OSTI)

    Pennington, Michael R.

    2014-02-01

    The contribution that Jefferson Lab has made, with its 6 GeV electron beam, and will make, with its 12 GeV upgrade, to our understanding of the way the fundamental interactions work, particularly strong coupling QCD, is outlined. The physics at the GeV scale is essential even in TeV collisions.

  2. Molecular Mimicry Regulates ABA Signaling by SnRK2 Kinases and PP2C Phosphatases

    SciTech Connect (OSTI)

    Soon, Fen-Fen; Ng, Ley-Moy; Zhou, X. Edward; West, Graham M.; Kovach, Amanda; Tan, M.H. Eileen; Suino-Powell, Kelly M.; He, Yuanzheng; Xu, Yong; Chalmers, Michael J.; Brunzelle, Joseph S.; Zhang, Huiming; Yang, Huaiyu; Jiang, Hualiang; Li, Jun; Yong, Eu-Leong; Cutler, Sean; Zhu, Jian-Kang; Griffin, Patrick R.; Melcher, Karsten; Xu, H. Eric

    2014-10-02

    Abscisic acid (ABA) is an essential hormone for plants to survive environmental stresses. At the center of the ABA signaling network is a subfamily of type 2C protein phosphatases (PP2Cs), which form exclusive interactions with ABA receptors and subfamily 2 Snfl-related kinase (SnRK2s). Here, we report a SnRK2-PP2C complex structure, which reveals marked similarity in PP2C recognition by SnRK2 and ABA receptors. In the complex, the kinase activation loop docks into the active site of PP2C, while the conserved ABA-sensing tryptophan of PP2C inserts into the kinase catalytic cleft, thus mimicking receptor-PP2C interactions. These structural results provide a simple mechanism that directly couples ABA binding to SnRK2 kinase activation and highlight a new paradigm of kinase-phosphatase regulation through mutual packing of their catalytic sites.

  3. On the RMgSn rare earth compounds (Journal Article) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Search Results Journal Article: On the RMgSn rare earth compounds Citation ... OSTI Identifier: 984445 Report Number(s): IS-J 7490 Journal ID: 0925-8388; TRN: ...

  4. Radiopharmaceutical stannic Sn-117m chelate compositions and methods of use

    DOE Patents [OSTI]

    Srivastava, Suresh C.; Meinken, George E.

    2001-01-01

    Radiopharmaceutical compositions including .sup.117m Sn labeled stannic (Sn.sup.4+) chelates are provided. The chelates are preferably polyhydroxycarboxylate, such as oxalates, tartrates, citrates, malonates, gluconates, glucoheptonates and the like. Methods of making .sup.117m Sn-labeled (Sn.sup.4+) polyhydroxycarboxylic chelates are also provided. The foregoing pharmaceutical compositions can be used in methods of preparing bone for scintigraphical analysis, for radiopharmaceutical skeletal imaging, treatment of pain resulting from metastatic bone involvement, treatment of primary bone cancer, treatment of cancer resulting from metastatic spread to bone from other primary cancers, treatment of pain resulting from rheumatoid arthritis, treatment of bone/joint disorders and to monitor radioactively the skeletal system.

  5. Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires

    SciTech Connect (OSTI)

    Guo, Shaojun; Andrew F. Fidler; He, Kai; Su, Dong; Chen, Gen; Lin, Qianglu; Pietryga, Jeffrey M.; Klimov, Victor I.

    2015-11-06

    In this study, the rational design and synthesis of narrow-gap colloidal semiconductor nanocrystals (NCs) is an important step toward the next generation of solution-processable photovoltaics, photodetectors, and thermoelectric devices. SnTe NCs are particularly attractive as a Pb-free alternative to NCs of narrow-gap lead chalcogenides. Previous synthetic efforts on SnTe NCs have focused on spherical nanoparticles. Here we report new strategies for synthesis of SnTe NCs with shapes tunable from highly monodisperse nanocubes, to nanorods (NRs) with variable aspect ratios, and finally to long, straight nanowires (NWs). Reaction at high temperature quickly forms thermodynamically favored nanocubes, but low temperatures lead to elongated particles. Transmission electron microscopy studies of reaction products at various stages of the synthesis reveal that the growth and shape-focusing of monodisperse SnTe nanocubes likely involves interparticle ripening, while directional growth of NRs and NWs may be initiated by particle dimerization via oriented attachment.

  6. Development of Nb{sub 3}Sn Cavity Vapor Diffusion Deposition System

    SciTech Connect (OSTI)

    Eremeev, Grigory V.; Macha, Kurt M.; Clemens, William A.; Park, HyeKyoung; Williams, R. Scott

    2014-02-01

    Nb{sub 3}Sn is a BCS superconductors with the superconducting critical temperature higher than that of niobium, so theoretically it surpasses the limitations of niobium in RF fields. The feasibility of technology has been demonstrated at 1.5 GHz with Nb{sub 3}Sn vapor deposition technique at Wuppertal University. The benefit at these frequencies is more pronounced at 4.2 K, where Nb{sub 3}Sn coated cavities show RF resistances an order of magnitude lower than that of niobium. At Jefferson Lab we started the development of Nb{sub 3}Sn vapor diffusion deposition system within an R\\&D development program towards compact light sources. Here we present the current progress of the system development.

  7. Optical and electrochemical studies of polyaniline/SnO{sub 2} fibrous nanocomposites

    SciTech Connect (OSTI)

    Manivel, P.; Ramakrishnan, S.; Kothurkar, Nikhil K.; Balamurugan, A.; Ponpandian, N.; Mangalaraj, D.; Viswanathan, C.

    2013-02-15

    Graphical abstract: Fiber with porous like structure of PANI/SnO{sub 2} nanocomposites were prepared by simplest in situ chemical polymerization method. The PL emission spectra revealed that the band from 404 and 436 nm which is related with oxygen vacancies. The excellent electrochemical properties of composite electrode show the specific capacitance of 173 F/g at a scan rate of 25 m V/s. Display Omitted Highlights: ? Self assembled PANI/SnO{sub 2} nanocomposites were synthesized by simple polymerization method. ? Electrochemical behavior of PANI/SnO{sub 2} nanocomposites electrode was analyzed by CV. ? Nanocomposites exhibit a higher specific capacitance of 173 F/g, compared with pure SnO{sub 2}. -- Abstract: Polyaniline (PANI)/tin oxide (SnO{sub 2}) fibrous nanocomposites were successfully prepared by an in situ chemical polymerization method with suitable conditions. The obtained composites were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy, photoluminescence (PL), electrical conductivity and cyclic voltammetry studies (CV). The XRD pattern of the as-prepared sample shows the presence of tetragonal SnO{sub 2} and the crystalline structure of SnO{sub 2} was not affected with the incorporation of PANI. The FTIR analysis confirms the uniform attachment of PANI on the surface of SnO{sub 2} nanostructures. SEM images show a fibrous agglomerated structure of PANI/SnO{sub 2}. The PL emission spectra revealed that the band from 404 and 436 nm which is related with oxygen vacancies. The electrochemical behavior of the PANI/SnO{sub 2} composite electrode was evaluated in a H{sub 2}SO{sub 4} solution using cyclic voltammetry. The composite electrode exhibited a specific capacitance of 173 F/g at a scan rate 25 mV/s. Thus the as-prepared PANI/SnO{sub 2} composite shows excellent electrochemical properties, suggesting that this composite is a promising material for supercapacitors.

  8. Synthesis, structure, and bonding in K12Au21Sn4. A polar intermetallic compound with dense Au20 and open AuSn4 layers

    SciTech Connect (OSTI)

    Li, Bin; Kim, Sung-Jin; Miller, Gordon J.; and Corbett, John D.

    2009-10-29

    The new phase K{sub 12}Au{sub 21}Sn{sub 4} has been synthesized by direct reaction of the elements at elevated temperatures. Single crystal X-ray diffraction established its orthorhombic structure, space group Pmmn (No. 59), a = 12.162(2); b = 18.058(4); c = 8.657(2) {angstrom}, V = 1901.3(7) {angstrom}{sup 3}, and Z = 2. The structure consists of infinite puckered sheets of vertex-sharing gold tetrahedra (Au{sub 20}) that are tied together by thin layers of alternating four-bonded-Sn and -Au atoms (AuSn{sub 4}). Remarkably, the dense but electron-poorer blocks of Au tetrahedra coexist with more open and saturated Au-Sn layers, which are fragments of a zinc blende type structure that maximize tetrahedral heteroatomic bonding outside of the network of gold tetrahedra. LMTO band structure calculations reveal metallic properties and a pseudogap at 256 valence electrons per formula unit, only three electrons fewer than in the title compound and at a point at which strong Au-Sn bonding is optimized. Additionally, the tight coordination of the Au framework atoms by K plays an important bonding role: each Au tetrahedra has 10 K neighbors and each K atom has 8-12 Au contacts. The appreciably different role of the p element Sn in this structure from that in the triel members in K{sub 3}Au{sub 5}In and Rb{sub 2}Au{sub 3}Tl appears to arise from its higher electron count which leads to better p-bonding (valence electron concentrations = 1.32 versus 1.22).

  9. SnCo–CMK nanocomposite with improved electrochemical performance for lithium-ion batteries

    SciTech Connect (OSTI)

    Zeng, Lingxing; Deng, Cuilin; Zheng, Cheng; Qiu, Heyuan; Qian, Qingrong; Chen, Qinghua; Wei, Mingdeng

    2015-11-15

    Highlights: • The SnCo–CMK nanocomposite was synthesized using mesoporous carbon as nano-reactor. • Ultrafine SnCo nanoparticles distribute both inside and outside of mesopore channels. • The SnCo–CMK nanocomposite is an alternative anode material for Li-ion intercalation. • A high reversible capacity of 562 mAh g{sup −1} is maintained after 60 cycles at 100 mA g{sup −1}. - Abstract: In the present work, SnCo–CMK nanocomposite was successfully synthesized for the first time via a simple nanocasting route by using mesoporous carbon as nano-reactor. The nanocomposite was then characterized by means of X-ray diffraction (XRD), thermogravimetric analysis (TG), N{sub 2} adsorption–desorption, scanning and transmission electron microscopy (SEM/TEM) respectively. Furthermore, the SnCo–CMK nanocomposite exhibited large reversible capacities, excellent cycling stability and enhanced rate capability when employed as an anode material for lithium-ion batteries. A large reversible capacity of 562 mA h g{sup −1} was obtained after 60 cycles at a current density of 0.1 A g{sup −1} which is attributed to the structure of ‘meso-nano’ SnCo–CMK composite. This unique structure ensures the intimate contact between CMK and SnCo nanoparticles, buffers the large volume expansion and prevents the aggregation of the SnCo nanoparticles during cycling, leading to the excellent cycling stability and enhanced rate capability.

  10. Clues to the nature of SN 2009ip from photometric and spectroscopic evolution to late times

    SciTech Connect (OSTI)

    Graham, M. L. [Astronomy Department, University of California, Berkeley, CA 94720 (United States); Sand, D. J. [Physics Department, Texas Tech University, Lubbock, TX 79409 (United States); Valenti, S.; Howell, D. A.; Parrent, J. [Las Cumbres Observatory Global Telescope Network, Goleta, CA 93117 (United States); Halford, M.; Zaritsky, D. [Astronomy Department, University of Arizona, Tucson, AZ 85721 (United States); Bianco, F. [Department of Physics, New York University, 4 Washington Place, New York, NY 10003 (United States); Rest, A. [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD 21218 (United States); Dilday, B., E-mail: melissagraham@berkeley.edu [North Idaho College, 1000 W. Garden Avenue, Coeur d'Alene, ID 83814 (United States)

    2014-06-01

    We present time series photometric and spectroscopic data for the transient SN 2009ip from the start of its outburst in 2012 September until 2013 November. These data were collected primarily with the new robotic capabilities of the Las Cumbres Observatory Global Telescope Network, a specialized facility for time domain astrophysics, and includes supporting high-resolution spectroscopy from the Southern Astrophysical Research Telescope, Kitt Peak National Observatory, and Gemini Observatory. Based on our nightly photometric monitoring, we interpret the strength and timing of fluctuations in the light curve as interactions between fast-moving ejecta and an inhomogeneous circumstellar material (CSM) produced by past eruptions of this massive luminous blue variable (LBV) star. Our time series of spectroscopy in 2012 reveals that, as the continuum and narrow H? flux from CSM interactions declines, the broad component of H? persists with supernova (SN)-like velocities that are not typically seen in LBVs or SN impostor events. At late times, we find that SN 2009ip continues to decline slowly, at ? 0.01 mag day{sup 1}, with small fluctuations in slope similar to Type IIn supernovae (SNe IIn) or SN impostors but no further LBV-like activity. The late-time spectrum features broad calcium lines similar to both late-time SNe and SN impostors. In general, we find that the photometric and spectroscopic evolution of SN 2009ip is more similar to SNe IIn than either continued eruptions of an LBV star or SN impostors but we cannot rule out a nonterminal explosion. In this context, we discuss the implications for episodic mass loss during the late stages of massive star evolution.

  11. Improving thermostability of CrO{sub 2} thin films by doping with Sn

    SciTech Connect (OSTI)

    Ding, Yi; Wang, Ziyu; Liu, Shuo; Shi, Jing; Yin, Di; Yuan, Cheng; Lu, Zhihong; Xiong, Rui

    2014-09-01

    Chromium dioxide (CrO{sub 2}) is an ideal material for spin electronic devices since it has almost 100% spin polarization near Fermi level. However, it is thermally unstable and easily decomposes to Cr{sub 2}O{sub 3} even at room temperature. In this study, we try to improve the thermal stability of CrO{sub 2} thin films by doping with Sn whose oxide has the same structure as CrO{sub 2}. High quality epitaxial CrO{sub 2} and Sn-doped CrO{sub 2} films were grown on single crystalline TiO{sub 2} (100) substrates by chemical vapor deposition. Sn{sup 4+} ions were believed to be doped into CrO{sub 2} lattice and take the lattice positions of Cr{sup 4+}. The magnetic measurements show that Sn-doping leads to a decrease of magnetocrystalline anisotropy. The thermal stabilities of the films were evaluated by annealing the films at different temperatures. Sn-doped films can withstand a temperature up to 510 °C, significantly higher than what undoped films can do (lower than 435 °C), which suggests that Sn-doping indeed enhances the thermal stability of CrO{sub 2} films. Our study also indicates that Sn-doping may not change the essential half metallic properties of CrO{sub 2}. Therefore, Sn-doped CrO{sub 2} is expected to be very promising for applications in spintronic devices.

  12. The electrochemical reactions of SnO2 with Li and Na: a study using thin films and mesoporous carbons

    SciTech Connect (OSTI)

    Mahurin, Shannon Mark; Mayes, Richard T; Dai, Sheng; Veith, Gabriel M

    2015-01-01

    In this work we have determined the room temperature electrochemical reactivity of SnO2 thin films and mesoporous carbons filled with SnO2 anodes with Na, and compare the results with those obtained during the reaction with Li. We show that SnO2 can reversibly deliver up to 6.2 Li/SnO2 whereas the reaction with Na is significantly limited. The initial discharge capacity is equivalent to less than 4 Na/SnO2, which is expected to correspond to the formation of 2 Na2O and Sn. This limited discharge capacity suggests the negative role of the formed Na2O matrix upon the reversible reaction of Sn clusters. Moreover, the reversible cycling of less than 1 Na/SnO2, despite the utilization of 6-7 nm SnO2 particles, is indicative of sluggish reaction kinetics. The origin of this significant capacity reduction is likely due to the formation of a diffusion limiting interface. Furthermore, there is a larger apparent hysteresis compared to Li. These results point to the need to design composite structures of SnO2 nanoparticles with suitable morphological and conductivity components.

  13. The electrochemical reactions of SnO2 with Li and Na: a study using thin films and mesoporous carbons

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mahurin, Shannon Mark; Mayes, Richard T; Dai, Sheng; Veith, Gabriel M

    2015-01-01

    In this work we have determined the room temperature electrochemical reactivity of SnO2 thin films and mesoporous carbons filled with SnO2 anodes with Na, and compare the results with those obtained during the reaction with Li. We show that SnO2 can reversibly deliver up to 6.2 Li/SnO2 whereas the reaction with Na is significantly limited. The initial discharge capacity is equivalent to less than 4 Na/SnO2, which is expected to correspond to the formation of 2 Na2O and Sn. This limited discharge capacity suggests the negative role of the formed Na2O matrix upon the reversible reaction of Sn clusters. Moreover,more » the reversible cycling of less than 1 Na/SnO2, despite the utilization of 6-7 nm SnO2 particles, is indicative of sluggish reaction kinetics. The origin of this significant capacity reduction is likely due to the formation of a diffusion limiting interface. Furthermore, there is a larger apparent hysteresis compared to Li. These results point to the need to design composite structures of SnO2 nanoparticles with suitable morphological and conductivity components.« less

  14. Preparation and photocatalytic properties of AgISnO{sub 2} nano-composites

    SciTech Connect (OSTI)

    Wen, Biao; Wang, Xiao-Hui; Lu, Juan; Cao, Jia-Lei; Wang, Zuo-Shan

    2013-05-15

    Highlights: ? AgISnO{sub 2} nano-composites have been successfully synthesized. ? As-prepared AgISnO{sub 2} nano-composites own the excellent visible light photocatalytic activity. ? As-prepared AgISnO{sub 2} nano-composites own the excellent stability. - Abstract: AgI doped SnO{sub 2} nano-composites were prepared by the chemical coprecipitation method and were characterized by the X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy. Results showed that main of the I{sup ?} ions remained in the AgI lattice which is highly dispersed in the system. The photo-catalytic experiments performed under visible light irradiation using methylene blue as the pollutant revealed that not only the photo-catalytic activity but also the stability of SnO{sub 2} based photocatalyst could be improved by introduction of an appropriate amount of AgI, and the result was further supported by the UVVis diffuse reflection spectra and the electron spin-resonance spectra. Among all of the samples, AgISnO{sub 2} nano-composite with 2At% AgI exhibited the best catalytic efficiency and stability.

  15. Microsoft PowerPoint - GE-Prolec CCE Meeting 10/19/2010 | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy PowerPoint - GE-Prolec CCE Meeting 10/19/2010 Microsoft PowerPoint - GE-Prolec CCE Meeting 10/19/2010 PowerPoint slides on GE-Prolec CCE meeting regarding Docket No. EERE-2010-BT-CE-0014 PDF icon Microsoft PowerPoint - GE-Prolec CCE Meeting 10/19/2010 More Documents & Publications GE-Prolec CCE Meeting October 19,2010 EA-1565: Final Environmental Assessment Benefits of Using Mobile Transformers and Mobile Substations for Rapidly Restoring Electrical Service: a Report to the United

  16. GRB 131231A: IMPLICATIONS OF THE GeV EMISSION

    SciTech Connect (OSTI)

    Liu, Bin; Chen, Wei; Liang, Yun-Feng; Zhou, Bei; He, Hao-Ning; Jin, Zhi-Ping; Fan, Yi-Zhong; Wei, Da-Ming [Key laboratory of Dark Matter and Space Astronomy, Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210008 (China); Tam, Pak-Hin Thomas [Institute of Astronomy and Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Shao, Lang, E-mail: liangyf@pmo.ac.cn, E-mail: beizhou@pmo.ac.cn, E-mail: yzfan@pmo.ac.cn, E-mail: dmwei@pmo.ac.cn, E-mail: phtam@phys.nthu.edu.tw [Department of Physics, Hebei Normal University, Shijiazhuang 050024 (China)

    2014-05-20

    GRB 131231A was detected by the Large Area Telescope on board the Fermi Space Gamma-ray Telescope. The high-energy gamma-ray (>100MeV) afterglow emission spectrum is F {sub ?}??{sup 0.54} {sup } {sup 0.15} in the first ?1300s after the trigger and the most energetic photon has an energy of ?62GeV, arriving at t ? 520s. With reasonable parameters of the gamma-ray burst (GRB) outflow as well as the density of the circum-burst medium, the synchrotron radiation of electrons or protons accelerated at an external forward shock have difficulty accounting for the data. Rather, the synchrotron self-Compton radiation of the forward shock-accelerated electrons can account for both the spectrum and temporal behavior of theGeV afterglow emission. We also show that the prospect for detecting GRB 131231A-like GRBs with the Cherenkov Telescope Array is promising.

  17. The 12 GeV Energy Upgrade at Jefferson Laboratory

    SciTech Connect (OSTI)

    Pilat, Fulvia C.

    2012-09-01

    Two new cryomodules and an extensive upgrade of the bending magnets at Jefferson Lab has been recently completed in preparation for the full energy upgrade in about one year. Jefferson Laboratory has undertaken a major upgrade of its flagship facility, the CW re-circulating CEBAF linac, with the goal of doubling the linac energy to 12 GeV. I will discuss here the main scope and timeline of the upgrade and report on recent accomplishments and the present status. I will then discuss in more detail the core of the upgrade, the new additional C100 cryomodules, their production, tests and recent successful performance. I will then conclude by looking at the future plans of Jefferson Laboratory, from the commissioning and operations of the 12 GeV CEBAF to the design of the MEIC electron ion collider.

  18. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed; Whipple, Richard E.; Grant, Patrick M.; O'Brien, Jr., Harold A.

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  19. Nucleon Form Factors above 6 GeV

    DOE R&D Accomplishments [OSTI]

    Taylor, R. E.

    1967-09-01

    This report describes the results from a preliminary analysis of an elastic electron-proton scattering experiment... . We have measured cross sections for e-p scattering in the range of q{sup 2} from 0.7 to 25.0 (GeV/c){sup 2}, providing a large region of overlap with previous measurements. In this experiment we measure the cross section by observing electrons scattered from a beam passing through a liquid hydrogen target. The scattered particles are momentum analyzed by a magnetic spectrometer and identified as electrons in a total absorption shower counter. Data have been obtained with primary electron energies from 4.0 to 17.9 GeV and at scattering angles from 12.5 to 35.0 degrees. In general, only one measurement of a cross section has been made at each momentum transfer.

  20. Meson Spectroscopy at JLab@12 GeV

    SciTech Connect (OSTI)

    Celentano, Andrea

    2013-03-01

    Meson, being the simplest hadronic bound system, is the ideal "laboratory" to study the interaction between quarks, to understand the role of the gluons inside hadrons and to investigate the origin of color confinement. To perform such studies it is important to measure the meson spectrum, with precise determination of resonance masses and properties, looking for rare qbar q states and for unconventional mesons with exotic quantum numbers (i.e. mesons with quantum numbers that are not compatible with a qbar q structure). With the imminent advent of the 12 GeV upgrade of Jefferson Lab a new generation of meson spectroscopy experiments will start: "Meson-Ex" in Hall B and "GLUEX" in Hall D. Both will use photo-production to explore the spectrum of mesons in the light-quark sector, in the energy range of few GeVs.

  1. Enhanced Ge/Si(001) island areal density and self-organization due to P predeposition

    SciTech Connect (OSTI)

    Cho, B.; Bareno, J.; Petrov, I.; Greene, J. E.

    2011-05-01

    The predeposition of P, with coverages {theta}{sub P} ranging from 0 to 1 ML, on Si(001) significantly increases both the areal density and spatial self-organization of Ge islands grown by gas-source molecular beam epitaxy from hydride precursors. The Ge island density {rho}{sub Ge} initially increases with {theta}{sub P}, reaching a maximum of 1.4 x 10{sup 10} cm{sup -2} at {theta}{sub P} = 0.7 ML, a factor of four times higher than on bare Si(001) under the same deposition conditions, before decreasing at higher P coverages. The increase in {rho}{sub Ge}({theta}{sub P}) is due to a corresponding decrease in Ge adatom mean free paths resulting from passivation of surface dangling bonds by adsorbed pentavalent P atoms which, in addition, leads to surface roughening and, therefore, higher Ge coverages at constant Ge{sub 2}H{sub 6} dose. As {theta}{sub P} (and hence, {rho}{sub Ge}) increases, so does the degree of Ge island ordering along <100> directions due to the anisotropic strain field surrounding individual islands. Similar results are obtained for Ge island growth on P-doped Si(001) layers where strong P surface segregation provides partial monolayer coverage prior to Ge deposition.

  2. Dirac node arcs in PtSn4

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wu, Yun; Wang, Lin -Lin; Mun, Eundeok; Johnson, D. D.; Mou, Daixiang; Huang, Lunan; Lee, Yongbin; Bud’ko, S. L.; Canfield, P. C.; Kaminski, Adam

    2016-04-04

    In topological quantum materials1,2,3 the conduction and valence bands are connected at points or along lines in the momentum space. A number of studies have demonstrated that several materials are indeed Dirac/Weyl semimetals4,5,6,7,8. However, there is still no experimental confirmation of materials with line nodes, in which the Dirac nodes form closed loops in the momentum space2,3. Here we report the discovery of a novel topological structure—Dirac node arcs—in the ultrahigh magnetoresistive material PtSn4 using laser-based angle-resolved photoemission spectroscopy data and density functional theory calculations. Unlike the closed loops of line nodes, the Dirac node arc structure arises owing tomore » the surface states and resembles the Dirac dispersion in graphene that is extended along a short line in the momentum space. Here, we propose that this reported Dirac node arc structure is a novel topological state that provides an exciting platform for studying the exotic properties of Dirac fermions.« less

  3. Industrial Dojo Program Fosters Industrial Internet Development | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Launches Cloud Foundry 'Industrial Dojo,' Contributes to Open Source to Foster Continued Development of the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Launches Cloud Foundry 'Industrial Dojo,' Contributes to Open Source to Foster Continued Development of the Industrial Internet

  4. Engineering Camp Puts STEAM Roller in Motion |GE Global Research

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    Engineering Institute Exposes Young Girls to Engineering Fields Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Engineering Institute Exposes Young Girls to Engineering Fields Cheryl Sabourin 2014.08.13 GE Global Research recently hosted 30 middle schools students from the Niskayuna Engineering Institute for Young

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    Technology & Discovery at Munich Technology & Discovery at Munich Interact with groundbreaking scientific and technological solutions across nearly all industries at GE's hub in Central Europe. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Featured Technologies Composite Manufacturing This discipline focuses

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    Technology & Discovery at Shanghai Technology & Discovery at Shanghai Connect with sustainable infrastructure and healthcare technologies introduced to the world through GE's "In China for China" strategy. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Featured Technologies Non-Thermal Brine

  7. Stump the Scientist | Page 2 of 3 | GE Global Research

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    Stump the Scientist Curiosity is the inventor's greatest tool. Ask us your question about science or technology and see what our scientists say! Home > Invention > Stump the Scientist Are Permanent Magnets Really Permanent? Watch the Video » Do Molecules Get Old? Watch the Video » Ready to Stump the Scientist? Try your hand at leaving our researchers speechless. Submit Question » Is Wireless Electricity Possible? Watch the Video » Who Is Jim Bray, GE Stump the Scientist? Watch the

  8. Quantum confinement in Si and Ge nanostructures: Theory and experiment

    SciTech Connect (OSTI)

    Barbagiovanni, Eric G.; Lockwood, David J.; Simpson, Peter J.; Goncharova, Lyudmila V.

    2014-03-15

    The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO{sub 2}, and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si{sub 3}N{sub 4} and Al{sub 2}O{sub 3}. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters.

  9. Exclusive processes at JLab at 6 GeV

    SciTech Connect (OSTI)

    Kim, Andrey

    2015-01-01

    Deeply virtual exclusive reactions provide a unique opportunity to probe the complex internal structure of the nucleon. They allow to access information about the correlations between parton transverse spatial and longitudinal momentum distributions from experimental observables. Dedicated experiments to study Deeply Virtual Compton Scattering (DVCS) and Deeply Virtual Meson Production (DVMP) have been carried out at Jefferson Lab using continuous electron beam with energies up to 6 GeV. Unpolarized cross sections, beam, target and double spin asymmetries have been measured for DVCS as well as for ?0 exclusive electroproduction. The data from Hall B provide a wide kinematic coverage with Q2=1-4.5 GeV2, xB=0.1-0.5, and ?t up to 2 GeV2. Hall A data have limited kinematic range partially overlapping with Hall B kinematics but provide a high accuracy measurements. Scaling tests of the DVCS cross sections provide solid evidence of twist-2 dominance, which makes chiral-even GPDs accessible even at modest Q2. We will discuss the interpretation of these data in terms of Generalized Parton Distributions (GPDs) model. Successful description of the recent CLAS ?0 exclusive production data within the framework of the GPD-based model provides a unique opportunity to access the chiral-odd GPDs.

  10. Synthesis of superconducting Nb3Sn coatings on Nb substrates

    SciTech Connect (OSTI)

    Barzi, E.; Franz, S.; Reginato, F.; Turrioni, D.; Bestetti, M.

    2015-12-01

    In the present work the electrochemical and thermal syntheses of superconductive Nb3Sn films are investigated. The Nb3Sn phase is obtained by electrodeposition of Sn layers and Cu intermediate layers onto Nb substrates followed by high temperature diffusion in inert atmosphere. Electrodeposition was performed from aqueous solutions at current densities in the 20 to 50 mA/cm2 range and at temperatures between 40 and 50°C. Subsequent thermal treatments were realized to obtain the Nb3Sn superconductive phase. Glow discharge optical emission spectrometry (GDOES) demonstrated that after thermal treatment interdiffusion of Nb and Sn occurred across a thickness of about 13 μm. Scanning Electron Microscopy (SEM) allowed accurately measuring the thickness of the Nb3Sn phase, whose average for the various types of film samples was between 5.7 and 8.0 μm. X-ray diffraction (XRD) patterns confirmed the presence of a cubic Nb3Sn phase (A15 structure) having (210) preferred orientation. The maximum obtained Tc was 17.68 K and the Bc20 ranged between 22.5 T and 23.8 T. With the procedure described in the present paper, coating complex shapes cost-effectively becomes possible, which is typical of electrochemical techniques. Furthermore, this approach can be implemented in classical wire processes such as "Jelly Roll" or "Rod in Tube", or directly used for producing superconducting surfaces. In conclusion, the potential of this method for Superconducting Radiofrequency (SRF) structures is also outlined.

  11. Characterization of second-phase plates in a Gd5Ge3 intermetallic compound

    SciTech Connect (OSTI)

    Cao, Qing; Chumbley, Leonard S.

    2013-05-16

    Rare-earth compounds based on the stoichiometry R5(SixGe1?x)4 (R = rare-earth elements) exhibit many unusual features, including possessing R5(SixGe1?x)3 thin plates which always precipitate from the matrix despite efforts to suppress their formation. In an effort to better understand the unique relationship between these two intermetallic alloy systems, the bulk microstructure of the compound Gd5Ge3 was examined using scanning (SEM) and transmission electron microscopy (TEM) and optical microscopy. Surprisingly, SEM examination revealed a series of thin plates present in the Gd5Ge3 matrix similar to what is seen in Gd5Ge4. TEM observation revealed that a role reversal had occurred, with the thin plates possessing the orthorhombic structure and composition of Gd5Ge4. The orientation relationship between Gd5Ge4 thin plates and the Gd5Ge3 matrix was determined to be Graphic the same relationship reported for Gd5Ge3 plates precipitating from a Gd5Ge4 matrix. However, by exchanging the respective roles of the phases as regards matrix vs. precipitate, the total number of precipitation variants seen can be increased from two to six. The persistence with which these two intermetallic systems co-exist is truly unique. However, understanding exactly the kinetic and thermodynamic conditions that lead to their unique relationship is hampered by the high formation temperatures at which the observed reaction occurs.

  12. Antiferromagnetism and domain effects in UPdSn

    SciTech Connect (OSTI)

    Nakotte, H. [Manual Lujan Jr. Neutron Scattering Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [Manual Lujan Jr. Neutron Scattering Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); [Department of Physics, New Mexico State University, Las Cruces, New Mexico 88003 (United States); Robinson, R.A.; Purwanto, A. [Manuel Lujan Jr. Neutron Scattering Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [Manuel Lujan Jr. Neutron Scattering Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Tun, Z. [Chalk River Laboratories, Atomic Energy of Canada Limited, Chalk River, Ontario, K0J 1J0 (CANADA)] [Chalk River Laboratories, Atomic Energy of Canada Limited, Chalk River, Ontario, K0J 1J0 (CANADA); Prokes, K.; Brueck, E.; de Boer, F.R. [Van der Waals-Zeeman Institute, University of Amsterdam, 1018 XE Amsterdam (The Netherlands)] [Van der Waals-Zeeman Institute, University of Amsterdam, 1018 XE Amsterdam (The Netherlands)

    1998-10-01

    Neutron-diffraction experiments have been performed on a single crystal of the hexagonal noncollinear antiferromagnetic compound UPdSn as a function of temperature and magnetic field. The use of a special horizontal-field magnet (with very wide horizontal access to the neutron beams) has allowed the study of the principal magnetic Bragg reflections in all three antiferromagnetic domain pairs throughout the magnetic phase diagram for B{lt}3thinspT and T{gt}6thinspK. The data confirm a picture in which one domain pair (1) grows at the expense of the other two domain pairs (2 and 3), for fields along the [100] axis for domain 1. On the other hand, if the field is applied along the perpendicular axis, [010] for domain 1, the other two domains are preferred. These results are consistent with the picture given in a previous vertical-field study of only one magnetic reflection from one domain, in which the 3-T field-induced transition is viewed as a spin-flop transition. There is, however, a small amount of irreversible moment rotation (from {theta}=43{degree} to 48{degree}, where {theta} is the moment canting angle within the hexagonal basal plane), on passing through the spin-flop transition. This seems to be connected with whether the sample is single or multidomain. In addition, the field independence of the N{acute e}el temperature (T{sub N}=37thinspK) has been measured up to 3 T, and data on the domain kinetics are presented. {copyright} {ital 1998} {ital The American Physical Society}

  13. Synthesis, crystal structure and properties of [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} with mixed-valent Ge centers

    SciTech Connect (OSTI)

    Yue, Cheng-Yang; Yuan, Zhuang-Dong; Zhang, Lu-Ge; Wang, Ya-Bai; Liu, Guo-Dong; Gong, Liao-Kuo; Lei, Xiao-Wu

    2013-10-15

    One new manganese thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} (dien=diethylenetriamine), was prepared under mild solvothermal conditions and structurally and spectroscopically characterized. The title compound crystallizes in the orthorhombic system, chiral space group P2{sub 1}2{sub 1}2{sub 1} (no. 19) with a=9.113(4) Å, b=12.475(5) Å, c=17.077(7) Å, V=1941.5(15) Å{sup 3} and Z=4. Its structure features a three-dimensional (3D) network composed of a one-dimensional (1D) [Ge{sub 2}S{sub 4}]{sup 2−} anionic chain and a [(dien){sub 2}Mn]{sup 2+} complex interconnected via various hydrogen bonds. The most interesting structural feature of the compound is the presence of two different oxidation states of germanium centers in the 1D [Ge{sub 2}S{sub 4}]{sup 2−} chain, which is also supported by the result of X-ray photoelectron spectroscopy measurement. The optical property of the title compound has also been studied by UV–vis spectra. - Graphical abstract: One new thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4}, contains a one-dimensional [Ge{sub 2}S{sub 4}]{sup 2−} anionic chain with two different oxidation states of germanium centers. Display Omitted - Highlights: • One new manganese thiogermanate [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} was prepared. • The compound features 1D [Ge{sub 2}S{sub 4}]{sup 2−} chain composed of [Ge{sup II}S{sub 4}] and [Ge{sup IV}S{sub 4}] tetrahedra. • The first example of inorganic–organic hybrid thiogermanates with mixed valent Ge centers.

  14. Superparamagnetic behavior of Fe-doped SnO{sub 2} nanoparticles

    SciTech Connect (OSTI)

    Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y.

    2014-02-20

    SnO{sub 2} is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO{sub 2} nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO{sub 2} nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO{sub 2}, were investigated. The particle size (1.8–16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO{sub 2} single-phase structure for samples annealed at 1073–1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO{sub 2} is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system.

  15. THE PECULIAR EXTINCTION LAW OF SN 2014J MEASURED WITH THE HUBBLE SPACE TELESCOPE

    SciTech Connect (OSTI)

    Amanullah, R.; Goobar, A.; Johansson, J.; Petrushevska, T. [Oskar Klein Centre, Physics Department, Stockholm University, SE-106 91 Stockholm (Sweden); Banerjee, D. P. K.; Venkataraman, V.; Joshi, V.; Ashok, N. M. [Physical Research Laboratory, Ahmedabad 380009 (India); Cao, Y.; Kulkarni, S. R. [Cahill Center for Astrophysics, California Institute of Technology, Pasadena, CA 91125 (United States); Kasliwal, M. M. [Observatories of the Carnegie Institution for Science, 813 Santa Barbara Street, Pasadena, CA 91101 (United States); Nugent, P. E. [Department of Astronomy, University of California Berkeley, B-20 Hearst Field, Annex # 3411, Berkeley, CA 94720-3411 (United States); Stanishev, V., E-mail: rahman@fysik.su.se [CENTRACentro Multidisciplinar de Astrofsica, Instituto Superior Tcnico, Av. Rovisco Pais 1, 1049-001 Lisbon (Portugal)

    2014-06-20

    The wavelength dependence of the extinction of Type Ia SN2014J in the nearby galaxy M82 has been measured using UV to near-IR photometry obtained with the Hubble Space Telescope, the Nordic Optical Telescope, and the Mount Abu Infrared Telescope. This is the first time that the reddening of an SN Ia is characterized over the full wavelength range of 0.2-2 ?m. A total-to-selective extinction, R{sub V} ? 3.1, is ruled out with high significance. The best fit at maximum using a Galactic type extinction law yields R{sub V} = 1.4 0.1. The observed reddening of SN2014J is also compatible with a power-law extinction, A {sub ?}/A{sub V} = (?/? {sub V}) {sup p} as expected from multiple scattering of light, with p = 2.1 0.1. After correcting for differences in reddening, SN2014J appears to be very similar to SN2011fe over the 14 broadband filter light curves used in our study.

  16. TYCHO SN 1572: A NAKED Ia SUPERNOVA REMNANT WITHOUT AN ASSOCIATED AMBIENT MOLECULAR CLOUD

    SciTech Connect (OSTI)

    Tian, W. W.; Leahy, D. A.

    2011-03-10

    The historical supernova remnant (SNR) Tycho SN 1572 originates from the explosion of a normal Type Ia supernova that is believed to have originated from a carbon-oxygen white dwarf in a binary system. We analyze the 21 cm continuum, H I, and {sup 12}CO-line data from the Canadian Galactic Plane Survey in the direction of SN 1572 and the surrounding region. We construct H I absorption spectra to SN 1572 and three nearby compact sources. We conclude that SN 1572 has no molecular cloud interaction, which argues against previous claims that a molecular cloud is interacting with the SNR. This new result does not support a recent claim that dust, newly detected by AKARI, originates from such an SNR-cloud interaction. We suggest that the SNR has a kinematic distance of 2.5-3.0 kpc based on a nonlinear rotational curve model. Very high energy {gamma}-ray emission from the remnant has been detected by the VERITAS telescope, so our result shows that its origin should not be an SNR-cloud interaction. Both radio and X-ray observations support that SN 1572 is an isolated Type Ia SNR.

  17. Photo-enhanced field emission characteristics of SnS{sub 2} nanosheets

    SciTech Connect (OSTI)

    Suryawanshi, Sachin R.; More, Mahendra A.; Warule, Sambhaji S.; Chaudhari, Nilima S.; Ogale, Satishchandra B.

    2014-04-24

    In the present studies, we demonstrate a facile hydrothermal route to synthesize elegant SnS{sub 2} nanosheets. The x-ray diffraction pattern clearly revealed formation of SnS{sub 2} phase under the hydrothermal conditions. SEM and TEM analysis indicated formation of very thin SnS{sub 2} nanosheets. Field electron emission studies of the SnS{sub 2} nanosheets emitter were preformed at base pressure of 110{sup ?8} mbar. The value of turn-on field, corresponding to an emission current density of ?1 ?A/ cm2, was found to be ? 4.6 V/?m. Interestingly, when the cathode was illuminated with visible light, it exhibited lower turn-on field of ? 4.2 V/?m, along with nearly 2.5 times enhancement in the emission current. Furthermore, the photo-enhanced emission characteristic shows a reproducible switching behavior. The photo-enhanced filed emission characteristics along with reproducible switching behaviour propose the SnS{sub 2} nanosheets emitter as a promising candidate for nano-optoelectronic devices.

  18. Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

    SciTech Connect (OSTI)

    Agrawal, Ashish; Barth, Michael; Madan, Himanshu; Datta, Suman; Lee, Yi-Jing; Lin, You-Ru; Wu, Cheng-Hsien; Ko, Chih-Hsin; Wann, Clement H.; Loubychev, Dmitri; Liu, Amy; Fastenau, Joel; Lindemuth, Jeff

    2014-08-04

    Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5 lower effective mass for s-InSb compared to s-Ge quantum well at 1.9??10{sup 12}?cm{sup 2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSb for future technology node.

  19. Irreversible altering of crystalline phase of phase-change Ge-Sb thin films

    SciTech Connect (OSTI)

    Krusin-Elbaum, L.; Shakhvorostov, D.; Cabral, C. Jr.; Raoux, S.; Jordan-Sweet, J. L.

    2010-03-22

    The stability of the crystalline phase of binary phase-change Ge{sub x}Sb{sub 1-x} films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature T{sub Ge}{sup p} to the rate of change dT{sub cryst}/dx of crystallization, with the precipitation easiest on the mid-range x plateau, where T{sub cryst} is nearly constant. Our findings point to a preferable 15% < or approx. x < 50% window, that may achieve the desired cycling/archival properties of a phase-change cell.

  20. Observation of optical spin injection into Ge-based structures at room temperature

    SciTech Connect (OSTI)

    Yasutake, Yuhsuke; Hayashi, Shuhei; Fukatsu, Susumu; Yaguchi, Hiroyuki

    2013-06-17

    Non-zero spin polarization induced by optical orientation was clearly observed at room temperature in a Ge/Ge{sub 0.8}Si{sub 0.2} quantum well grown on Ge and a Ge layer grown on Si by molecular beam epitaxy, whereas it was absent in bulk Ge. This occurred because indirect-gap photoluminescence (PL), which can obscure the spin-polarization information carried by the direct-gap PL, was quenched by unintentional growth-related defects in the epitaxial layers. Such interpretation was confirmed by applying time gating that effectively removed the indirect-gap PL characterized by a slower rise time, which allowed us to demonstrate the existence of room-temperature spin polarization in bulk Ge.

  1. Water Treatment in Oil and Gas Production | GE Global Research

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    Water Treatment and Reuse in Unconventional Gas Production Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Water Treatment and Reuse in Unconventional Gas Production A key challenge in tapping vast reserves of natural gas from shale deposits is treating the water that is used to bring this gas to the surface. GE

  2. Inventors in Action: Energy Everywhere | GE Global Research

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    Inventors in Action: Energy Everywhere Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Inventors in Action: Energy Everywhere Different parts of the world present different problems and have different needs in the quest to deliver clean, efficient power to homes and businesses. In this Google+ Hangout, GE experts from

  3. Hybrid and Electric Traction Motor | GE Global Research

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    A World-Class Traction Motor for Hybrid and Electric Vehicles Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) A World-Class Traction Motor for Hybrid and Electric Vehicles Engineers at GE Global Research are advancing motor technology that could have a substantial impact on hybrid and electric vehicles (EVs) of the

  4. Oil & Gas Technology at Oklahoma City | GE Global Research

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    Oklahoma City, USA > Technology & Discovery at Oklahoma City Technology & Discovery at Oklahoma City Experience efforts to safely, efficiently and reliably accelerate oil and gas industry-changing solutions at GE's newest global research facility. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Areas of

  5. What Works Summit on Manufacturing Innovation | GE Global Research

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    What Works Summit on Manufacturing Innovation Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) What Works Summit on Manufacturing Innovation Glen Merfeld 2012.02.20 Last week, GE held a four-day summit in Washington, D.C., focused on the long-term economic and industry growth of the United States. Discussion focused on

  6. Women in Science and Engineering Are Online | GE Global Research

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    in Science and Engineering Are Online Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Women in Science and Engineering Are Online Kristen Brosnan 2012.12.04 Today, GE Global Research is kicking-off our two-day Women in Science and Engineering (WISE) Symposium. The event is aimed at discussing best practices for

  7. Work & Life at Munich | GE Global Research

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    Work & Life at Munich Work & Life at Munich Living at Germany's Cosmopolitan Crossroads offers easy access to outdoor pursuits in the Alps and travel throughout Europe. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Employee Organizations GE Volunteers Our volunteers commit each year to multiple events such as

  8. Working on Advanced Battery Technologies With National Labs | GE Global

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    Research Working on Advanced Battery Technologies With National Labs Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Working on Advanced Battery Technologies With National Labs Yan Gao 2011.07.27 Yan Gao is a Senior Scientist in the Chemical and Structure Analysis Laboratory at GE-GRC in Niskayuna NY. Yan

  9. Digital Twins of physical assets prevents unplanned downtime | GE Global

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    Research a 'Digital Twin' for physical assets can help achieve no unplanned downtime Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) How a 'Digital Twin' for physical assets can help achieve no unplanned downtime Mark Grabb and Matt Nielsen, data scientists at GE Global Research, explain the importance of data

  10. Supercomputing with Livermore National Lab | GE Global Research

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    Working With Livermore National Lab on Supercomputing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Working With Livermore National Lab on Supercomputing GE Global Research has been selected by Lawrence Livermore National Laboratory (LLNL) to participate in an incubator program that will use high-performance computing

  11. A Balanced Lifestyle Makes Time for Exercise | GE Global Research

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    Balanced Lifestyle Makes Time for Exercise Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) A Balanced Lifestyle Makes Time for Exercise Jim Bray 2012.09.18 In the past few weeks, we've shared #GetFit stories from our Niskayuna and San Ramon sites. GE Healthcare's #getfit campaign is a social media initiative to drive

  12. Unimpossible Missions: The University Edition | GE Global Research

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    Home > Impact > Can you do the impossible? Enter our Unimpossible Missions: The University Edition challenge Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Can you do the impossible? Enter our Unimpossible Missions: The University Edition challenge Earlier this year, three teams of GE Global Research

  13. Really Cool Models of Ice Nucleation | GE Global Research

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    Really Cool Models of Ice Nucleation Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Really Cool Models of Ice Nucleation Rick Arthur 2013.08.20 I'm excited to highlight some progress GE Research has made in modeling the formation of ice from water droplets in contact with cold surfaces. For several years, a

  14. Meeting Energy Needs in Brazil |GE Global Research

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    Looking a Decade Ahead: Electrical Power Generation in Brazil Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Looking a Decade Ahead: Electrical Power Generation in Brazil Ricardo Hernandez Pereira 2014.11.03 In the Bioenergy Systems Organization at GE Global Research - Rio de Janeiro (GRC-R), we research both new

  15. High-Speed Network Enables Industrial Internet | GE Global Research

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    Unveils High-Speed Network Infrastructure to Connect Machines, Data and People at Light Speed to the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Unveils High-Speed Network Infrastructure to Connect Machines, Data and People at Light Speed to the Industrial Internet New fiber optic network

  16. How Will We Power the Planet? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Power The Planet? Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Invention Factory: How Will We Power The Planet? In this episode of Invention Factory, a collaboration between GE and Vice, we look at sustainable energy sources generating power in unexpected ways. From trash to the ocean's tidal energy - all the energy

  17. Industrial Materials and Inspection Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Industrial Materials and Inspection Technologies Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Industrial Materials and Inspection Technologies Waseem Faidi 2013.06.12 Hi, I am Waseem Faidi and I lead the Inspection and Metrology Lab at GE Global Research in developing novel inspection and process monitoring solutions

  18. Innovate in China, Innovate for China | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovate in China, Innovate for China Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Innovate in China, Innovate for China Xiangli Chen, Ph.D. 2015.06.05 15 years is nothing but a fleeting moment. I can still recall the day when a 10-member GE China technology team settled in Shanghai 15 years ago. Back then, we had an

  19. BBQ -- Is It Science or Art? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    BBQ - Is it Science or Art? Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) BBQ - Is it Science or Art? Lynn DeRose 2015.03.13 This is the first in a five-part series of dispatches from GE's Science of Barbecue Experience at South by Southwest. Our state-of-the-art Brilliant Super-Smoker is outfitted with sensors to

  20. Application of RTG (SiGe) technology to MESUR

    SciTech Connect (OSTI)

    Vicente, F.A. )

    1993-01-15

    This paper discusses providing electrical power for the Mars Environmental Survey (MESUR) mission. The use of radioisotope thermoelectric generator (RTG) technology using SiGe enables total satisfaction of the mission requirements. This technology permits placing the survey landers at any location on Mars, with the capability of transmitting data directly to Earth. If a relay satellite is deployed, the modular construction of the RTG permits tailoring the power to match that mission configuration. Presented are various configurations and trades directed toward achieving operational status, first with a pathfinder'' mission and subsequently with the full complement of landers.

  1. Diamond turning of Si and Ge single crystals

    SciTech Connect (OSTI)

    Blake, P.; Scattergood, R.O.

    1988-12-01

    Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

  2. ARM - VAP Product - mmcrmode3ge200404141cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4141cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027344 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200404141CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments, 20040415 version Active Dates 2004.04.15 - 2007.11.27 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements

  3. ARM - VAP Product - mmcrmode3ge200408121cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    8121cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027345 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200408121CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments (8/04-5/05) Active Dates 2004.08.13 - 2008.04.17 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements The

  4. ARM - VAP Product - mmcrmode3ge200511041cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    511041cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027346 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200511041CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments (since 11/2005) Active Dates 2005.11.04 - 2011.02.27 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements

  5. ARM - VAP Product - mmcrmode3ge200606161cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    6161cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1095384 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200606161CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments (version 6/2006) Active Dates 2006.06.21 - 2011.03.07 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements

  6. ARM - VAP Product - mmcrmode3ge200608161cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    8161cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027348 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200608161CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments (version 11/2006) Active Dates 2006.11.27 - 2009.02.14 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements

  7. ARM - VAP Product - mmcrmode3ge200712011cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    712011cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027349 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200712011CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments Active Dates 2008.01.01 - 2011.03.23 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements The

  8. Slow Mo Guys and Cold Spray | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Slow Mo Guys and Cold Spray Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Slow Mo Guys and Cold Spray ) The Slow Mo Guys came to GE Global Research in Niskayuna to film our researchers demonstrate a process called "cold spray", in which metal powders are sprayed at high velocities to build a part or add

  9. BELLA generates multi-GeV electron beam

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    BELLA generates multi-GeV electron beam Click to share on Facebook (Opens in new window) Click to share on Twitter (Opens in new window) Click to share on Reddit (Opens in new window) Click to share on Pinterest (Opens in new window) Berkeley Lab scientists want to develop accelerators in such a way that accessing the light produced by beams is much less expensive and can be performed in much smaller settings. This image showa a 9 cm long capillary discharge waveguide used in BELLA experiments

  10. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

    2015-09-01

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk.more » With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

  11. Tin induced a-Si crystallization in thin films of Si-Sn alloys

    SciTech Connect (OSTI)

    Neimash, V. E-mail: oleks.goushcha@nuportsoft.com; Poroshin, V.; Goushcha, A. O. E-mail: oleks.goushcha@nuportsoft.com; Shepeliavyi, P.; Yukhymchuk, V.; Melnyk, V.; Kuzmich, A.; Makara, V.

    2013-12-07

    Effects of tin doping on crystallization of amorphous silicon were studied using Raman scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence techniques. Formation of silicon nanocrystals (24?nm in size) in the amorphous matrix of Si{sub 1?x}Sn{sub x}, obtained by physical vapor deposition of the components in vacuum, was observed at temperatures around 300?C. The aggregate volume of nanocrystals in the deposited film of Si{sub 1?x}Sn{sub x} exceeded 60% of the total film volume and correlated well with the tin content. Formation of structures with ?80% partial volume of the nanocrystalline phase was also demonstrated. Tin-induced crystallization of amorphous silicon occurred only around the clusters of metallic tin, which suggested the crystallization mechanism involving an interfacial molten Si:Sn layer.

  12. GE Partners with Lab on Ultrasonic Clothes Dryer | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GE Partners with Lab on Ultrasonic Clothes Dryer GE Partners with Lab on Ultrasonic Clothes Dryer Addthis Description This video tells how a partnership between Oak Ridge National Laboratory and GE Appliances--with support from the Office of Energy Efficiency and Renewable Energy's (EERE's) Building Technologies Office-is changing the way Americans do laundry with their ultrasonic drying technology that uses vibrations, not heat, to dry fabric. Text Version This is going to be a game-changing

  13. Tensile-strain and doping enhanced direct bandgap optical transition of n{sup +} doped Ge/GeSi quantum wells

    SciTech Connect (OSTI)

    Fan, W. J.

    2013-11-14

    Band structures of tensile strained and n{sup +} doped Ge/GeSi quantum wells (QWs) are calculated by multiple-band kp method. The energy dispersion curves of the ? and L conduction subbands are obtained. The effects of tensile strain and n{sup +} doping in Ge on direct bandgap optical gain and spontaneous radiative recombination rate spectra are investigated including the electron leakage from ? to L conduction subbands. Our results show that the optical gain and spontaneous radiative recombination rate can be significantly increased with the tensile strain, n-type doping concentration, and injection carrier density in the Ge QW. The free carrier absorption is calculated and cannot be ignored because of the heavily doped Ge. The pure TM mode polarized net optical gain up to 1153?cm{sup ?1} can be achieved for the Ge/Ge{sub 0.986}Si{sub 0.014} QW with tensile strain of 1.61% and n-type doping concentration of 30??10{sup 18}?cm{sup ?3}.

  14. Jefferson Lab Accelerator Delivers Its First 12 GeV Electrons | Jefferson

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Lab Accelerator Delivers Its First 12 GeV Electrons On December 14, full-energy 12 GeV electron beam was provided for the first time, to the Experimental Hall D complex, located in the upper, left corner of this aerial photo of the Continuous Electron Beam Accelerator Facility. Hall D is the new experimental research facility - added to CEBAF as part of the 12 GeV Upgrade project. Beam was also delivered to Hall A (dome in the lower left). Jefferson Lab Accelerator Delivers Its First 12 GeV

  15. Charge trapping of Ge-nanocrystals embedded in TaZrO{sub x} dielectric films

    SciTech Connect (OSTI)

    Lehninger, D. Seidel, P.; Geyer, M.; Schneider, F.; Heitmann, J.; Klemm, V.; Rafaja, D.; Borany, J. von

    2015-01-12

    Ge-nanocrystals (NCs) were synthesized in amorphous TaZrO{sub x} by thermal annealing of co-sputtered Ge-TaZrO{sub x} layers. Formation of spherical shaped Ge-NCs with small variation of size, areal density, and depth distribution was confirmed by high-resolution transmission electron microscopy. The charge storage characteristics of the Ge-NCs were investigated by capacitance-voltage and constant-capacity measurements using metal-insulator-semiconductor structures. Samples with Ge-NCs exhibit a maximum memory window of 5 V by sweeping the bias voltage from −7 V to 7 V and back. Below this maximum, the width of the memory window can be controlled by the bias voltage. The fitted slope of the memory window versus bias voltage characteristics is very close to 1 for samples with one layer Ge-NCs. A second layer Ge-NCs does not result in a second flat stair in the memory window characteristics. Constant-capacity measurements indicate charge storage in trapping centers at the interfaces between the Ge-NCs and the surrounding materials (amorphous matrix/tunneling oxide). Charge loss occurs by thermal detrapping and subsequent band-to-band tunneling. Reference samples without Ge-NCs do not show any memory window.

  16. Commissioning of the 123 MeV injector for 12 GeV CEBAF

    SciTech Connect (OSTI)

    Wang, Yan; Hofler, Alicia S.; Kazimi, Reza

    2015-09-01

    The upgrade of CEBAF to 12GeV included modifications to the injector portion of the accelerator. These changes included the doubling of the injection energy and relocation of the final transport elements to accommodate changes in the CEBAF recirculation arcs. This paper will describe the design changes and the modelling of the new 12GeV CEBAF injector. Stray magnetic fields have been a known issue for 6 GeV CEBAF injector, the results of modelling the new 12GeV injector and the resulting changes implemented to mitigate this issue are describe in this paper. The results of beam commissioning of the injector are also presented.

  17. The Ho-Ni-Ge system: Isothermal section and new rare-earth nickel

    Office of Scientific and Technical Information (OSTI)

    germanides (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: The Ho-Ni-Ge system: Isothermal section and new rare-earth nickel germanides Citation Details In-Document Search Title: The Ho-Ni-Ge system: Isothermal section and new rare-earth nickel germanides The Ho-Ni-Ge system has been investigated at 1070 K and up to ~60 at% Ho by X-ray diffraction and microprobe analyses. Besides the eight known compounds, HoNi{sub 5}Ge{sub 3} (YNi{sub 5}Si{sub 3}-type),

  18. Another SunShot Success: GE to Make PrimeStar Solar Panels at...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Yesterday, General Electric (GE) announced that it will build a new thin-film photovoltaic ... printing technology to make tiny high-concentrating photovoltaic (HCPV) cells. ...

  19. GE Hydro Asia Co Ltd formerly Kvaerner Power Equipment Co Ltd...

    Open Energy Info (EERE)

    Kvaerner Power Equipment Co Ltd Kvaerner Hangfa Jump to: navigation, search Name: GE Hydro Asia Co Ltd (formerly Kvaerner Power Equipment Co., Ltd (Kvaerner Hangfa)) Place:...

  20. Optical Observations of Gamma-Ray Bursts: Connections to GeV...

    Office of Scientific and Technical Information (OSTI)

    Observations of Gamma-Ray Bursts: Connections to GeVTeV Jets Vestrand, W. Thomas Los Alamos National Laboratory Astronomy & Astrophysics(79) Astronomy and Astrophysics Astronomy...

  1. Hubble Residuals of Nearby SN Ia Are Correlated with Host Galaxy Masses

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Hubble Residuals of Nearby SN Ia Are Correlated with Host Galaxy Masses Citation Details In-Document Search Title: Hubble Residuals of Nearby SN Ia Are Correlated with Host Galaxy Masses × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information resources in

  2. Synthesis and characterization of SnO{sub 2} thin films doped with Fe to 10%

    SciTech Connect (OSTI)

    Lpez, E.; Marn, J.; Osorio, J.

    2014-05-15

    Appropriate conditions for SnO{sub 2} powder synthesis doped with iron to 10% by using sol-gel route are found. The powders obtained have been analyzed by means of analytic spectroscopic techniques: Raman, Mssbauer, diffuse reflectance, Fourier transform infrared, and X-ray diffraction. Sn{sub 0.9}Fe{sub 0.1}O{sub 2} thin films deposited by AC magnetron sputtering on silicon substrates are obtained and characterized. A crystal structure rutile-type was found for thin films.

  3. Lattice dynamics in perovskite halides CsSn X 3 with X = I , Br , Cl

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | DOE PAGES Lattice dynamics in perovskite halides CsSn X 3 with X = I , Br , Cl « Prev Next » Title: Lattice dynamics in perovskite halides CsSn X 3 with X = I , Br , Cl Authors: Huang, Ling-yi ; Lambrecht, Walter R. L. Publication Date: 2014-11-05 OSTI Identifier: 1180124 Grant/Contract Number: ER 46874-SC0008933 Type: Publisher's Accepted Manuscript Journal Name: Physical Review B Additional Journal Information: Journal Volume: 90; Journal Issue: 19; Journal ID: ISSN

  4. Magnetically nanostructured state in a Ni-Mn-Sn shape-memory alloy (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | DOE PAGES Publisher's Accepted Manuscript: Magnetically nanostructured state in a Ni-Mn-Sn shape-memory alloy This content will become publicly available on June 15, 2016 « Prev Next » Title: Magnetically nanostructured state in a Ni-Mn-Sn shape-memory alloy Authors: Yuan, S. ; Kuhns, P. L. ; Reyes, A. P. ; Brooks, J. S. ; Hoch, M. J. R. ; Srivastava, V. ; James, R. D. ; El-Khatib, S. ; Leighton, C. Publication Date: 2015-06-16 OSTI Identifier: 1184888 Grant/Contract Number:

  5. Magnetically nanostructured state in a Ni-Mn-Sn shape-memory alloy (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Magnetically nanostructured state in a Ni-Mn-Sn shape-memory alloy Citation Details In-Document Search This content will become publicly available on June 15, 2016 Title: Magnetically nanostructured state in a Ni-Mn-Sn shape-memory alloy Authors: Yuan, S. ; Kuhns, P. L. ; Reyes, A. P. ; Brooks, J. S. ; Hoch, M. J. R. ; Srivastava, V. ; James, R. D. ; El-Khatib, S. ; Leighton, C. Publication Date: 2015-06-16 OSTI Identifier: 1184888 Grant/Contract Number:

  6. Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods

    Office of Scientific and Technical Information (OSTI)

    and nanowires (Journal Article) | SciTech Connect Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires Citation Details In-Document Search This content will become publicly available on November 6, 2016 Title: Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires In this study, the rational design and synthesis of narrow-gap colloidal semiconductor nanocrystals (NCs) is an important step toward the next generation of

  7. SPECTROPOLARIMETRY OF THE TYPE Ia SN 2007sr TWO MONTHS AFTER MAXIMUM LIGHT

    SciTech Connect (OSTI)

    Zelaya, P.; Quinn, J. R.; Clocchiatti, A.; Baade, D.; Patat, F.; Hoeflich, P.; Maund, J.; Wang, L.; Wheeler, J. C.

    2013-02-01

    We present late-time spectropolarimetric observations of SN 2007sr, obtained with the Very Large Telescope at the ESO Paranal Observatory when the object was 63 days after maximum light. The late-time spectrum displays strong line polarization in the Ca II absorption features. SN 2007sr adds to the case of some normal Type Ia supernovae that show high line polarization or repolarization at late times, a fact that might be connected with the presence of high-velocity features at early times.

  8. Relaxation of optically stimulated resistance of thin SnO{sub 2} films

    SciTech Connect (OSTI)

    Russkih, D. V., E-mail: russcience@mail.ru; Rembeza, S. I. [Voronezh State Technical University (Russian Federation)

    2009-06-15

    The results of investigation of the effect of irradiation with photons from an L5013VC violet light-emitting diode (LED) with the wavelength of 400 nm and power of 76 mW on the resistance of the sensitive layer of SnO{sub 2}-based test structures of gas sensors in air before and after the high-temperature stabilizing annealing are presented. The features in the variation of the SnO{sub 2}-layer resistance in time are established when the LED is switched on and off.

  9. Absolute timing measurements of the Ni-like Pd and Sn soft-x-ray lasers

    SciTech Connect (OSTI)

    Staub, F.; Braud, M.; Balmer, J.E.; Nilsen, J.

    2005-10-15

    The absolute time of emission of the x-ray laser output with respect to the arrival of a 100-ps pump pulse has been measured with the aid of a calibrated timing fiducial. The results show the x-ray laser to appear up to 60 ps (80 ps) before the peak of the pump pulse in the case of the Sn (Pd) x-ray laser, which is in good agreement with simulations obtained from the LASNEX and CRETIN codes. The pulse duration was found to be {approx}45 ps for both the Sn and the Pd x-ray lasers.

  10. TYPE IIn SUPERNOVA SN 2010jl: OPTICAL OBSERVATIONS FOR OVER 500 DAYS AFTER EXPLOSION

    SciTech Connect (OSTI)

    Zhang Tianmeng; Wu Chao; Zhai Meng; Wu Hong; Fan Zhou; Zou Hu; Zhou Xu; Ma Jun; Wang Xiaofeng; Chen Juncheng; Chen Jia; Liu Qin; Huang Fang; Liang Jide; Zhao Xulin; Lin Lin; Wang Min; Dennefeld, Michel; Zhang Jujia E-mail: wang_xf@mail.tsinghua.edu.cn

    2012-11-01

    We present extensive optical observations of a Type IIn supernova (SN IIn) 2010jl for the first 1.5 years after its discovery. The UBVRI light curves demonstrated an interesting two-stage evolution during the nebular phase, which almost flatten out after about 90 days from the optical maximum. SN 2010jl has one of the highest intrinsic H{alpha} luminosities ever recorded for an SN IIn, especially at late phase, suggesting a strong interaction of SN ejecta with the dense circumstellar material (CSM) ejected by the progenitor. This is also indicated by the remarkably strong Balmer lines persisting in the optical spectra. One interesting spectral evolution about SN 2010jl is the appearance of asymmetry of the Balmer lines. These lines can be well decomposed into a narrow component and an intermediate-width component. The intermediate-width component showed a steady increase in both strength and blueshift with time until t {approx} 400 days after maximum, but it became less blueshifted at t {approx} 500 days, when the line profile appeared relatively symmetric again. Owing to the fact that a pure reddening effect will lead to a sudden decline of the light curves and a progressive blueshift of the spectral lines, we therefore propose that the asymmetric profiles of H lines seen in SN 2010jl are unlikely due to the extinction by newly formed dust inside the ejecta, contrary to the explanation by some early studies. Based on a simple CSM-interaction model, we speculate that the progenitor of SN 2010jl may suffer a gigantic mass loss ({approx}30-50 M{sub Sun }) a few decades before explosion. Considering a slow-moving stellar wind (e.g., {approx}28 km s{sup -1}) inferred for the preexisting, dense CSM shell and the extremely high mass-loss rate (1-2 M{sub Sun} yr{sup -1}), we suggest that the progenitor of SN 2010jl might have experienced a red supergiant stage and may explode finally as a post-red supergiant star with an initial mass above 30-40 M{sub Sun }.

  11. Gold-rich R3Au7Sn3: Establishing the interdependence between electronic

    Office of Scientific and Technical Information (OSTI)

    features and physical properties (Journal Article) | SciTech Connect Journal Article: Gold-rich R3Au7Sn3: Establishing the interdependence between electronic features and physical properties Citation Details In-Document Search Title: Gold-rich R3Au7Sn3: Establishing the interdependence between electronic features and physical properties × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical

  12. Fusion reactions in collisions induced by Li isotopes on Sn targets

    SciTech Connect (OSTI)

    Fisichella, M.; Shotter, A. C.; Di Pietro, A.; Figuera, P.; Lattuada, M.; Marchetta, C.; Musumarra, A.; Pellegriti, M. G.; Ruiz, C.; Scuderi, V.; Strano, E.; Torresi, D.; Zadro, M.

    2012-10-20

    Fusion cross sections for the {sup 6}Li+{sup 120}Sn and {sup 7}Li+{sup 119}Sn systems have been measured. We aim to search for possible effects due to the different neutron transfer Q-values, by comparing the fusion cross sections for the two systems below the barrier. This experiment is the first step of a wider systematic aiming to study the above problems in collisions induced by stable and unstable Li isotopes on tin all forming the same compound nucleus.

  13. Testing of TAMU3: a Nb3Sn Block-Coil Dipole with Stress Management

    Office of Scientific and Technical Information (OSTI)

    (Technical Report) | SciTech Connect Technical Report: Testing of TAMU3: a Nb3Sn Block-Coil Dipole with Stress Management Citation Details In-Document Search Title: Testing of TAMU3: a Nb3Sn Block-Coil Dipole with Stress Management The Accelerator Research Lab (ARL) at Texas A&M has recently concluded the construction and testing of a superconducting block-coil dipole TAMU3. TAMU3 reached 85% of the resistive-onset short sample critical current (0.1 μV/cm criterion) that was measured on

  14. Features of a priori heavy doping of the n-TiNiSn intermetallic semiconductor

    SciTech Connect (OSTI)

    Romaka, V. A.; Rogl, P.; Romaka, V. V.; Hlil, E. K.; Stadnyk, Yu. V.; Budgerak, S. M.

    2011-07-15

    The crystal structure, the distribution of electron density, and the energy, kinetic, and magnetic properties of the n-TiNiSn intermetallic semiconductor are investigated. It is shown that a priori doping of n-TiNiSn with donors originates from partial, up to 0.5 at %, redistribution of Ti and Ni atoms in crystallographic sites of Ti atoms. The correlation is established between the donor concentration, amplitude of modulation of the continuous energy bands, and degree of filling of low-scale fluctuation potential wells with charge carriers. The results obtained are discussed within the Shklovskii-Efros model of a heavily doped and compensated semiconductor.

  15. Detector development for Jefferson Lab's 12GeV Upgrade

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qiang, Yi

    2015-05-01

    Jefferson Lab will soon finish its highly anticipated 12 GeV Upgrade. With doubled maximum energy, Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF) will enable a new experimental program with substantial discovery potential, addressing important topics in nuclear, hadronic and electroweak physics. In order to take full advantage of the high energy, high luminosity beam, new detectors are being developed, designed and constructed to fit the needs of different physics topics. The paper will give an overview of various new detector technologies to be used for 12 GeV experiments. It will then focus on the development of two solenoid-based spectrometers,more » the GlueX and SoLID spectrometers. The GlueX experiment in Hall D will study the complex properties of gluons through exotic hybrid meson spectroscopy. The GlueX spectrometer, a hermetic detector package designed for spectroscopy and the associated partial wave analysis, is currently in the final stage of construction. Hall A, on the other hand, is developing the SoLID spectrometer to capture the 3D image of the nucleon from semi-inclusive processes and to study the intrinsic properties of quarks through mirror symmetry breaking. Such a spectrometer will have the capability to handle very high event rates while still maintaining a large acceptance in the forward region.« less

  16. Search for GeV GRBs at Chacaltaya

    SciTech Connect (OSTI)

    Castellina, A.; Ghia, P. L.; Morello, C.; Trinchero, G.; Vallania, P.; Vernetto, S.; Navarra, G.; Saavedra, O.; Yoshii, H.; Kaneko, T.; Kakimoto, K.; Nishi, K.; Cabrera, R.; Urzagasti, D.; Velarde, A.; Barthelmy, S. D.; Butterworth, P.; Cline, T. L.; Gehrels, N.; Fishman, G. J.

    1998-05-16

    In this paper we present the results of a search for GeV Gamma Ray Bursts made by the INCA experiment during the first 9 months of operation. INCA, an air shower array located at Mount Chacaltaya (Bolivia) at 5200 m a.s.l., has been searching for GRBs since December 1996. Up to August, 1997, 34 GRBs detected by BATSE occurred in the field of view of the experiment. For any burst, the counting rate of the array in the 2 hours interval around the burst trigger time has been studied. No significant excess has been observed. Assuming for the bursts a power low energy spectrum extending up to 1 TeV with a slope {alpha}=-2 and a duration of 10 s, the obtained 1 GeV-1 TeV energy fluence upper limits range from 7.9 10{sup -5} erg cm{sup -2} to 3.5 10{sup -3} erg cm{sup -2} depending on the event zenith angles.

  17. Structural basis for basal activity and autoactivation of abscisic acid (ABA) signaling SnRK2 kinases

    SciTech Connect (OSTI)

    Ng, Ley-Moy; Soon, Fen-Fen; Zhou, X. Edward; West, Graham M.; Kovach, Amanda; Suino-Powell, Kelly M.; Chalmers, Michael J.; Li, Jun; Yong, Eu-Leong; Zhu, Jian-Kang; Griffin, Patrick R.; Melcher, Karsten; Xu, H. Eric

    2014-10-02

    Abscisic acid (ABA) is an essential hormone that controls plant growth, development, and responses to abiotic stresses. Central for ABA signaling is the ABA-mediated autoactivation of three monomeric Snf1-related kinases (SnRK2.2, -2.3, and -2.6). In the absence of ABA, SnRK2s are kept in an inactive state by forming physical complexes with type 2C protein phosphatases (PP2Cs). Upon relief of this inhibition, SnRK2 kinases can autoactivate through unknown mechanisms. Here, we report the crystal structures of full-length Arabidopsis thaliana SnRK2.3 and SnRK2.6 at 1.9- and 2.3-{angstrom} resolution, respectively. The structures, in combination with biochemical studies, reveal a two-step mechanism of intramolecular kinase activation that resembles the intermolecular activation of cyclin-dependent kinases. First, release of inhibition by PP2C allows the SnRK2s to become partially active because of an intramolecular stabilization of the catalytic domain by a conserved helix in the kinase regulatory domain. This stabilization enables SnRK2s to gain full activity by activation loop autophosphorylation. Autophosphorylation is more efficient in SnRK2.6, which has higher stability than SnRK2.3 and has well-structured activation loop phosphate acceptor sites that are positioned next to the catalytic site. Together, these data provide a structural framework that links ABA-mediated release of PP2C inhibition to activation of SnRK2 kinases.

  18. Conduction band offset at GeO{sub 2}/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies

    SciTech Connect (OSTI)

    Zhang, W. F.; Nishimula, T.; Nagashio, K.; Kita, K.; Toriumi, A.

    2013-03-11

    We report a consistent conduction band offset (CBO) at a GeO{sub 2}/Ge interface determined by internal photoemission spectroscopy (IPE) and charge-corrected X-ray photoelectron spectroscopy (XPS). IPE results showed that the CBO value was larger than 1.5 eV irrespective of metal electrode and substrate type variance, while an accurate determination of valence band offset (VBO) by XPS requires a careful correction of differential charging phenomena. The VBO value was determined to be 3.60 {+-} 0.2 eV by XPS after charge correction, thus yielding a CBO (1.60 {+-} 0.2 eV) in excellent agreement with the IPE results. Such a large CBO (>1.5 eV) confirmed here is promising in terms of using GeO{sub 2} as a potential passivation layer for future Ge-based scaled CMOS devices.

  19. The reaction mechanism of SnSb and Sb thin film anodes for Na-ion batteries studied by X-ray diffraction, 119Sn and 121Sb M ssbauer spectroscopies

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Baggetto, Loic; Hah, Hien-Yoong; Jumas, Dr. Jean-Claude; Johnson, Prof. Dr. Charles E.; Johnson, Jackie A.; Keum, Jong Kahk; Bridges, Craig A; Veith, Gabriel M

    2014-01-01

    The electrochemical reaction of Sb and SnSb anode materials with Na results in the formation of amorphous materials. To understand the resulting phases and electrochemical capacities we studied the reaction products local order using 119Sn and 121Sb M ssbauer spectroscopies in conjunction with measurements performed on model powder compounds of Na-Sn and Na-Sb to further clarify the reactions steps. For pure Sb the discharge (sodiation) starts with the formation of an amorphous phase composed of atomic environments similar to those found in NaSb, and proceeds further by the formation of environments similar to that present in Na3Sb. The reversible reactionmore » takes place during a large portion of the charge process. At full charge the anode material still contains a substantial fraction of Na, which explains the lack of recrystallization into crystalline Sb. The reaction of SnSb yields Na3Sb crystalline phase at full discharge at higher temperatures (65 and 95 C) while the room temperature reaction yields amorphous compounds. The electrochemically-driven, solid-state amorphization reaction occurring at room temperature is governed by the simultaneous formation of Na-coordinated Sn and Sb environments, as monitored by the decrease (increase) of the 119Sn (121Sb) M ssbauer isomer shifts. Overall, the monitoring of the hyperfine parameters enables to correlate the changes in Na content to the individual Sn and Sb local chemical environments.« less

  20. The reaction mechanism of SnSb and Sb thin film anodes for Na-ion batteries studied by X-ray diffraction, 119Sn and 121Sb Mössbauer spectroscopies

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Baggetto, Loïc; Hah, Hien-Yoong; Jumas, Jean-Claude; Johnson, Charles E.; Johnson, Jacqueline A.; Keum, Jong K.; Bridges, Craig A.; Veith, Gabriel M.

    2014-06-01

    The electrochemical reaction of Sb and SnSb anode materials with Na results in the formation of amorphous materials. To understand the resulting phases and electrochemical capacities we studied the reaction products local order using 119Sn and 121Sb Mössbauer spectroscopies in conjunction with measurements performed on model powder compounds of Na-Sn and Na-Sb to further clarify the reactions steps. For pure Sb the discharge (sodiation) starts with the formation of an amorphous phase composed of atomic environments similar to those found in NaSb, and proceeds further by the formation of environments similar to that present in Na3Sb. The reversible reaction takesmore » place during a large portion of the charge process. At full charge the anode material still contains a substantial fraction of Na, which explains the lack of recrystallization into crystalline Sb. The reaction of SnSb yields Na3Sb crystalline phase at full discharge at higher temperatures (65 and 95°C) while the room temperature reaction yields amorphous compounds. The electrochemically-driven, solid-state amorphization reaction occurring at room temperature is governed by the simultaneous formation of Na-coordinated Sn and Sb environments, as monitored by the decrease (increase) of the 119Sn (121Sb) Mössbauer isomer shifts. Overall, the monitoring of the hyperfine parameters enables to correlate the changes in Na content to the individual Sn and Sb local chemical environments.« less

  1. Nb3Sn RRP® strand and Rutherford cable development for a 15 T dipole demonstrator

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Barzi, E.; Andreev, N.; Li, P.; Lombardo, V.; Turrioni, D.; Zlobin, A. V.

    2016-03-16

    Keystoned Rutherford cables made of 28 strands and with a stainless steel core were developed and manufactured using 1 mm Nb3Sn composite wires produced by Oxford Superconducting Technology with 127 and 169 restacks using the Restacked-Rod-Process®. Furthermore, the performance and properties of these cables were studied to evaluate possible candidates for 15 T accelerator magnets.

  2. Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Guo, Shaojun; Andrew F. Fidler; He, Kai; Su, Dong; Chen, Gen; Lin, Qianglu; Pietryga, Jeffrey M.; Klimov, Victor I.

    2015-11-06

    In this study, the rational design and synthesis of narrow-gap colloidal semiconductor nanocrystals (NCs) is an important step toward the next generation of solution-processable photovoltaics, photodetectors, and thermoelectric devices. SnTe NCs are particularly attractive as a Pb-free alternative to NCs of narrow-gap lead chalcogenides. Previous synthetic efforts on SnTe NCs have focused on spherical nanoparticles. Here we report new strategies for synthesis of SnTe NCs with shapes tunable from highly monodisperse nanocubes, to nanorods (NRs) with variable aspect ratios, and finally to long, straight nanowires (NWs). Reaction at high temperature quickly forms thermodynamically favored nanocubes, but low temperatures lead tomore » elongated particles. Transmission electron microscopy studies of reaction products at various stages of the synthesis reveal that the growth and shape-focusing of monodisperse SnTe nanocubes likely involves interparticle ripening, while directional growth of NRs and NWs may be initiated by particle dimerization via oriented attachment.« less

  3. Nb3Sn cable development for the 11 T dipole demonstation model

    SciTech Connect (OSTI)

    Barzi, E.; Lombardo, V.; Nobrega, F.; Turrioni, D.; Yamada, R.; Zlobin, A.V.; Karppinen, M.; /CERN

    2011-06-01

    Fermilab (FNAL) and CERN have started the development of 11 T 11-m long Nb{sub 3}Sn dipoles to replace a number of LHC NbTi dipoles and free space for cold collimators in the LHC DS areas. An important step in the design of these magnets is the development of the high aspect ratio Nb{sub 3}Sn cable to achieve the nominal field of 11 T at the nominal LHC operating current of 11.85 kA at 1.9 K with 20% margin. Keystoned cables with 40 and 41 strands with and without a stainless steel core were made out of hard Cu wires and Nb{sub 3}Sn RRP strand of 0.7 mm nominal diameter. The cable optimization process was aimed at achieving both mechanical stability and minimal damage to the delicate internal architecture of the Restacked-Rod-Process (RRP) Nb3Sn strands with 127 restack design to be used in the magnet short models. Each cable was characterized electrically for transport properties degradation at high field and for low field stability, and metallographically for internal damage.

  4. High Specific Activity Sn-117m by Post Irradiation Isotope Separation

    SciTech Connect (OSTI)

    DAuria, John

    2015-04-16

    ElectroMagnetic Isotope Separation (EMIS) is used in the production of enriched stable isotopes. We demonstrated the feasibility of using EMIS to produce medium Specific Activity 117mSm using high purity 116Sn target material irradiated in a high flux reactor.

  5. Uniform hierarchical SnS microspheres: Solvothermal synthesis and lithium ion storage performance

    SciTech Connect (OSTI)

    Fang, Zhen Wang, Qin; Wang, Xiaoqing; Fan, Fan; Wang, Chenyan; Zhang, Xiaojun

    2013-11-15

    Graphical abstract: - Highlights: Uniform hierarchical SnS microspheres via solvothermal reaction. The formation process was investigated in detail. The obtained hierarchical SnS microspheres exhibit superior capacity (1650 mAh g{sup ?1}) when used as lithium battery for the hierarchical microsphere structure. - Abstract: Hierarchical SnS microspheres have been successfully synthesized by a mild solvothermal process using poly(vinylpyrrolidone) as surfactant in this work. The morphology and composition of the microspheres were investigated by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The influence of reaction parameters, such as sulfur sources, reaction temperature and the concentration of PVP, on the final morphology of the products are investigated. On the basis of time-dependent experiments, the growth mechanism has also been proposed. The specific surface area of the 3D hierarchitectured SnS microspheres were investigated by using nitrogen adsorption and desorption isotherms. Lithium ion storage performances of the synthesized materials as anodes for Lithium-ion battery were investigated in detail and it exhibits excellent electrochemical properties.

  6. Electrophoretic Study of the SnO2/Aqueous Solution Interface up to 260 degrees C.

    SciTech Connect (OSTI)

    Rodriguez-Santiago, V; Fedkin, Mark V.; Wesolowski, David J

    2009-07-01

    An electrophoresis cell developed in our laboratory was utilized to determine the zeta potential at the SnO{sub 2} (cassiterite)/aqueous solution (10{sup -3} mol kg{sup -1} NaCl) interface over the temperature range from 25 to 260 C. Experimental techniques and methods for the calculation of zeta potential at elevated temperature are described. From the obtained zeta potential data as a function of pH, the isoelectric points (IEPs) of SnO{sub 2} were obtained for the first time. From these IEP values, the standard thermodynamic functions were calculated for the protonation-deprotonation equilibrium at the SnO{sub 2} surface, using the 1-pK surface complexation model. It was found that the IEP values for SnO{sub 2} decrease with increasing temperature, and this behavior is compared to the predicted values by the multisite complexation (MUSIC) model and other semitheoretical treatments, and were found to be in excellent agreement.

  7. Test results of a Nb3Al/Nb3Sn subscale magnet for accelerator application

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Iio, Masami; Xu, Qingjin; Nakamoto, Tatsushi; Sasaki, Ken -ichi; Ogitsu, Toru; Yamamoto, Akira; Kimura, Nobuhiro; Tsuchiya, Kiyosumi; Sugano, Michinaka; Enomoto, Shun; et al

    2015-01-28

    The High Energy Accelerator Research Organization (KEK) has been developing a Nb3Al and Nb3Sn subscale magnet to establish the technology for a high-field accelerator magnet. The development goals are a feasibility demonstration for a Nb3Al cable and the technology acquisition of magnet fabrication with Nb3Al superconductors. KEK developed two double-pancake racetrack coils with Rutherford-type cables composed of 28 Nb3Al wires processed by rapid heating, quenching, and transformation in collaboration with the National Institute for Materials Science and the Fermi National Accelerator Laboratory. The magnet was fabricated to efficiently generate a high magnetic field in a minimum-gap common-coil configuration with twomore » Nb3Al coils sandwiched between two Nb3Sn coils produced by the Lawrence Berkeley National Laboratory. A shell-based structure and a “bladder and key” technique have been used for adjusting coil prestress during both the magnet assembly and the cool down. In the first excitation test of the magnet at 4.5 K performed in June 2014, the highest quench current of the Nb3Sn coil, i.e., 9667 A, was reached at 40 A/s corresponding to 9.0 T in the Nb3Sn coil and 8.2 T in the Nb3Al coil. The quench characteristics of the magnet were studied.« less

  8. Pressure Safety of JLAB 12GeV Upgrade Cryomodule

    SciTech Connect (OSTI)

    Cheng, Gary; Wiseman, Mark A.; Daly, Ed

    2009-11-01

    This paper reviews pressure safety considerations, per the US Department of Energy (DOE) 10CFR851 Final Rule [1], which are being implemented during construction of the 100 Megavolt Cryomodule (C100 CM) for Jefferson Lab’s 12 GeV Upgrade Project. The C100 CM contains several essential subsystems that require pressure safety measures: piping in the supply and return end cans, piping in the thermal shield and the helium headers, the helium vessel assembly which includes high RRR niobium cavities, the end cans, and the vacuum vessel. Due to the vessel sizes and pressure ranges, applicable national consensus code rules are applied. When national consensus codes are not applicable, equivalent design and fabrication approaches are identified and implemented. Considerations for design, material qualification, fabrication, inspection and examination are summarized. In addition, JLAB’s methodologies for implementation of the 10 CFR 851 requirements are described.

  9. Complexes of self-interstitials with oxygen atoms in Ge

    SciTech Connect (OSTI)

    Khirunenko, L. I.; Pomozov, Yu. V.; Sosnin, M. G.; Abrosimov, N. V.; Riemann, H.

    2014-02-21

    Interactions of germanium self-interstitials with interstitial oxygen atoms in Ge subjected to irradiation at ?80 K and subsequently to annealing have been studied. To distinguish the processes involving vacancies and self-interstitials the doping with tin was used. It was shown that absorption lines with maximum at 602, 674, 713 and 803 cm{sup ?1} are self-interstitials-related. Two lines at 602 and 674, which develop upon annealing in the temperature range 180240 K, belong to IO complexes, while the bands at 713 and 803 cm{sup ?1}, which emerge after annealing at T>220 K, are associated with I{sub 2}O. It is argued that the annealing of IO occurs by two mechanisms: by dissociation and by diffusion.

  10. Effects of Laser Wavelength and Fluence in Pulsed Laser Deposition of Ge Films

    SciTech Connect (OSTI)

    Yap, Seong Shan; Reenaas, Turid Worren; Siew, Wee Ong; Tou, Teck Yong; Ladam, Cecile

    2011-03-30

    Nanosecond lasers with ultra-violet, visible and infrared wavelengths: KrF (248 nm, 25 ns) and Nd:YAG (1064 nm, 532 nm, 355 nm, 5 ns) were used to ablate polycrystalline Ge target and deposit Ge films in vacuum (<10-6 Torr). Time-integrated optical emission spectra were obtained for laser fluence from 0.5-10 J/cm{sup 2}. Neutrals and ionized Ge species in the plasma plume were detected by optical emission spectroscopy. Ge neutrals dominated the plasma plume at low laser fluence while Ge{sup +} ions above some threshold fluence. The deposited amorphous thin-film samples consisted of particulates of size from nano to micron. The relation of the film properties and plume species at different laser fluence and wavelengths were discussed.

  11. Studies of beam halo formation in the 12GeV CEBAF design

    SciTech Connect (OSTI)

    Yves Roblin; Arne Freyberger

    2007-06-01

    Beam halo formation in the beam transport design for the Jefferson Lab 12GeV upgrade was investigated using 12GeV beam transport models as well as data from 6GeV CEBAF operations. Various halo sources were considered; these covered both nuclear interactions with beam gas as well as optics-related effects such as non linearities in the magnetic fields of the transport elements. Halo due to beam gas scattering was found to be less of a problem at 12GeV compared to the 6GeV machine. Halo due to non linear effects of magnetic elements was characterized as a function of beam orbit and functional forms of the distribution were derived. These functional forms were used as inputs in subsequent detector optimizations studies.

  12. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    SciTech Connect (OSTI)

    Prakash, A. P. Gnana Praveen, K. C.; Pushpa, N.; Cressler, John D.

    2015-05-15

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to {sup 60}Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  13. Realizing the Full Potential of Insertion Anodes for Mg-ion Batteries Through the Nano-Structuring of Sn

    SciTech Connect (OSTI)

    Parent, Lucas R.; Cheng, Yingwen; Sushko, Petr; Shao, Yuyan; Liu, Jun; Wang, Chong M.; Browning, Nigel D.

    2015-02-11

    For next-generation rechargeable batteries, magnesium is of great interest as an alternative to Lithium due to its relative abundance, low toxicity, and bivalent charge (3833 mAh/cm3 and 2205 mAh/g). However, Mg-ion batteries face unique challenges related to the formation of anode passivation layers, anode-electrolyte-cathode incompatibilities, slow solid-state Mg2+ diffusion, and ion trapping. Using analytical (scanning) transmission electron microscopy ((S)TEM) and ab initio modeling, we have investigated Mg2+ intercalation and extraction mechanisms in β-SnSb alloy nanoparticles (NPs). During the first several charge-discharge cycles, the SnSb particles irreversibly break down into a network of pure-Sn and Sb-rich sub-particles, as Mg-ions replace Sn ions in the SnSb lattice. Once the morphology has stabilized, the small Sn NPs (< 20 nm) are responsible for the majority of reversible storage capacity, while the Sb-rich particles trap substitutional-Mg atoms in the lattice and are significantly less active. This result strongly indicates that pure-Sn nanoparticles on a graphene support can act as a high capacity anode for Mg-ion batteries.

  14. Dielectric properties of a polar ZnSnO{sub 3} with LiNbO{sub 3}-type

    Office of Scientific and Technical Information (OSTI)

    structure (Journal Article) | SciTech Connect Dielectric properties of a polar ZnSnO{sub 3} with LiNbO{sub 3}-type structure Citation Details In-Document Search Title: Dielectric properties of a polar ZnSnO{sub 3} with LiNbO{sub 3}-type structure The dielectric properties of a polar LiNbO{sub 3}-type ZnSnO{sub 3} synthesized under high-pressure have been investigated with respect to the dielectric permittivity in the relative low frequency range of 10 kHz to 1 MHz and the SHG response at an

  15. Parity Violation Inelastic Scattering Experiments at 6 GeV and 12 GeV Jefferson Lab

    SciTech Connect (OSTI)

    Sulkosky, Vincent A.; et. al.,

    2015-03-01

    We report on the measurement of parity-violating asymmetries in the deep inelastic scattering and nucleon resonance regions using inclusive scattering of longitudinally polarized electrons from an unpolarized deuterium target. The effective weak couplings C$_{2q}$ are accessible through the deep-inelastic scattering measurements. Here we report a measurement of the parity-violating asymmetry, which yields a determination of 2C$_{2u}$ - C$_{2d}$ with an improved precision of a factor of five relative to the previous result. This result indicates evidence with 95% confidence that the 2C$_{2u}$ - C$_{2d}$ is non-zero. This experiment also provides the first parity-violation data covering the whole resonance region, which provide constraints on nucleon resonance models. Finally, the program to extend these measurements at Jefferson Lab in the 12 GeV era using the Solenoidal Large Intensity Device was also discussed.

  16. Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeOx) Films

    SciTech Connect (OSTI)

    Murphy, Neil R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, Chintalapalle V.

    2014-03-18

    Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, Г = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing Г from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of Г is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (λ) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (λ = 550 nm) to 2.62 and occurs at Г = 0.25. Finally n drops to 1.60 for Г = 0.50–1.00, where the films become GeO2. A detailed correlation between Г, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

  17. EXC-12-0001, EXC-12-0002, EXC-12-0003- In the Matter of Philips Lighting Company, GE Lighting, and OSRAM SYLVANIA, Inc.

    Broader source: Energy.gov [DOE]

    On April 16, 2012, OHA issued a decision granting Applications for Exception filed respectively by Philips Lighting Company (Philips), GE Lighting (GE) and OSRAM SYLVANIA, Inc. (OSI) (collectively,...

  18. Constraints on the progenitor system and the environs of SN 2014J from deep radio observations

    SciTech Connect (OSTI)

    Prez-Torres, M. A.; Alberdi, A. [Instituto de Astrofsica de Andaluca, Glorieta de las Astronoma, s/n, E-18008 Granada (Spain); Lundqvist, P.; Bjrnsson, C. I.; Fransson, C. [Department of Astronomy, AlbaNova University Center, Stockholm University, SE-10691 Stockholm (Sweden); Beswick, R. J.; Muxlow, T. W. B.; Argo, M. K. [Jodrell Bank Centre for Astrophysics, University of Manchester, Oxford Road, Manchester M13 9PL (United Kingdom); Paragi, Z. [Joint Institute for VLBI in Europe, Postbus 2, 7990 AA Dwingeloo (Netherlands); Ryder, S. [Australian Astronomical Observatory, P.O. Box 915, North Ryde, NSW 1670 (Australia); Marcaide, J. M.; Ros, E.; Guirado, J. C. [Departamento de Astronoma i Astrofsica, Universidad de Valencia, E-46100 Burjassot, Valencia (Spain); Mart-Vidal, I. [Onsala Space Observatory, Chalmers University of Technology, SE-43992 Onsala (Sweden)

    2014-09-01

    We report deep EVN and eMERLIN observations of the Type Ia SN 2014J in the nearby galaxy M82. Our observations represent, together with JVLA observations of SNe 2011fe and 2014J, the most sensitive radio studies of Type Ia SNe ever. By combining data and a proper modeling of the radio emission, we constrain the mass-loss rate from the progenitor system of SN 2014J to M-dot ?7.010{sup ?10} M{sub ?} yr{sup ?1} (for a wind speed of 100 km s{sup 1}). If the medium around the supernova is uniform, then n {sub ISM} ? 1.3 cm{sup 3}, which is the most stringent limit for the (uniform) density around a Type Ia SN. Our deep upper limits favor a double-degenerate (DD) scenarioinvolving two WD starsfor the progenitor system of SN 2014J, as such systems have less circumstellar gas than our upper limits. By contrast, most single-degenerate (SD) scenarios, i.e., the wide family of progenitor systems where a red giant, main-sequence, or sub-giant star donates mass to an exploding WD, are ruled out by our observations. (While completing our work, we noticed that a paper by Margutti et al. was submitted to The Astrophysical Journal. From a non-detection of X-ray emission from SN 2014J, the authors obtain limits of M-dot ?1.210{sup ?9} M {sub ?} yr{sup 1} (for a wind speed of 100 km s{sup 1}) and n {sub ISM} ? 3.5 cm{sup 3}, for the ??r {sup 2} wind and constant density cases, respectively. As these limits are less constraining than ours, the findings by Margutti et al. do not alter our conclusions. The X-ray results are, however, important to rule out free-free and synchrotron self-absorption as a reason for the radio non-detections.) Our estimates on the limits on the gas density surrounding SN2011fe, using the flux density limits from Chomiuk et al., agree well with their results. Although we discuss the possibilities of an SD scenario passing observational tests, as well as uncertainties in the modeling of the radio emission, the evidence from SNe 2011fe and 2014J points in the direction of a DD scenario for both.

  19. Hydrogen Sensor Based on Pd/GeO{sub 2} Using a Low Cost Electrochemical Deposition

    SciTech Connect (OSTI)

    Jawad, M. J.; Hashim, M. R.; Ali, N. K.

    2011-05-25

    This work reports on a synthesis of sub micron germanium dioxide (GeO{sub 2}) on porous silicon (PS) by electrochemical deposition. n-type Si (100) wafer was used to fabricate (PS) using conventional method of electrochemical etching in HF based solution. A GeCl{sub 4} was directly hydrolyzed by hydrogen peroxide to produce pure GeO{sub 2}, and then electrochemically deposited on PS. Followed by palladium (Pd) contact on GeO{sub 2} /PS was achieved by using RF sputtering technique. The grown GeO{sub 2} crystals were characterized using SEM and EDX. I-V characteristics of Pd/ GeO{sub 2} were recorded before and after hydrogen gas exposure as well as with different H{sub 2} concentrations and different applied temperatures. The sensitivity of Pd/ GeO{sub 2} also has been investigated it could be seen to increase significantly with increased hydrogen concentration while it decreased with increase temperature.

  20. Single-crystalline CuGeO{sub 3} nanorods: Synthesis, characterization and properties

    SciTech Connect (OSTI)

    Wang, Fangfang; Xing, Yan; Su, Zhongmin; Song, Shuyan

    2013-07-15

    Graphical abstract: - Highlights: Single crystalline CuGeO{sub 3} nanorods were prepared via a hydrothermal route. The material exhibits greatly enhanced activity in photocatalytic degradation of dyes. The magnetic susceptibility measurements indicate spin-Peierls transition properties. CuGeO{sub 3} nanorods may be of potential application in future integrated optical devices. - Abstract: Single crystalline CuGeO{sub 3} nanorods with a diameter of 2035 nm and a length up to 1 ?m have been prepared via a facile hydrothermal route with the assistance of ethylenediamine. Some influencing factors such as the reaction time, reaction temperature, the volume of ethylenediamine were revealed to play crucial roles in the formation of the CuGeO{sub 3} nanorods. A possible growth mechanism was proposed based on the experimental results. Significantly, this is the first time that CuGeO{sub 3} was used as a photocatalyst for organic pollutant degradation under UV light irradiation. The reaction constant (k) of CuGeO{sub 3} nanorods was five times that of the sample prepared by solid-state reaction under UV light irradiation. Additionally, the optical and magnetic properties of CuGeO{sub 3} nanorods were systematically studied.