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Sample records for uut ge sn

  1. Epi-cleaning of Ge/GeSn heterostructures

    SciTech Connect (OSTI)

    Di Gaspare, L.; Sabbagh, D.; De Seta, M.; Sodo, A.; Wirths, S.; Buca, D.; Zaumseil, P.; Schroeder, T.; Capellini, G.

    2015-01-28

    We demonstrate a very-low temperature cleaning technique based on atomic hydrogen irradiation for highly (1%) tensile strained Ge epilayers grown on metastable, partially strain relaxed GeSn buffer layers. Atomic hydrogen is obtained by catalytic cracking of hydrogen gas on a hot tungsten filament in an ultra-high vacuum chamber. X-ray photoemission spectroscopy, reflection high energy electron spectroscopy, atomic force microscopy, secondary ion mass spectroscopy, and micro-Raman showed that an O- and C-free Ge surface was achieved, while maintaining the same roughness and strain condition of the as-deposited sample and without any Sn segregation, at a process temperature in the 100–300 °C range.

  2. Sn-enriched Ge/GeSn nanostructures grown by MBE on (001) GaAs and Si wafers

    SciTech Connect (OSTI)

    Sadofyev, Yu. G. Martovitsky, V. P.; Klekovkin, A. V.; Saraykin, V. V.; Vasil’evskii, I. S.

    2015-12-15

    Elastically stressed metastable GeSn layers with a tin molar fraction as large as 0.185 are grown on (001) Si and GaAs wafers covered with a germanium buffer layer. A set of wafers with a deviation angle in the range 0°–10° is used. It is established that the GeSn crystal undergoes monoclinic deformation with the angle β to 88° in addition to tetragonal deformation. Misorientation of the wafers surface results in increasing efficiency of the incorporation of tin adatoms into the GeSn crystal lattice. Phase separation in the solid solution upon postgrowth annealing of the structures begins long before the termination of plastic relaxation of elastic heteroepitaxial stresses. Tin released as a result of GeSn decomposition predominantly tends to be found on the surface of the sample. Manifestations of the brittle–plastic mechanism of the relaxation of stresses resulting in the occurrence of microcracks in the subsurface region of the structures under investigation are found.

  3. Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS

    SciTech Connect (OSTI)

    Fei, Ruixiang; Yang, Li; Li, Wenbin; Li, Ju

    2015-10-26

    We predict enormous, anisotropic piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe, and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their piezoelectric coefficients are about one to two orders of magnitude larger than those of other 2D materials, such as MoS{sub 2} and GaSe, and bulk quartz and AlN which are widely used in industry. This enhancement is a result of the unique “puckered” C{sub 2v} symmetry and electronic structure of monolayer group IV monochalcogenides. Given the achieved experimental advances in the fabrication of monolayers, their flexible character, and ability to withstand enormous strain, these 2D structures with giant piezoelectric effects may be promising for a broad range of applications such as nano-sized sensors, piezotronics, and energy harvesting in portable electronic devices.

  4. Formation of non-substitutional ?-Sn defects in Ge{sub 1?x}Sn{sub x} alloys

    SciTech Connect (OSTI)

    Fuhr, J. D.; Ventura, C. I.; Barrio, R. A.

    2013-11-21

    Although group IV semiconductor alloys are expected to form substitutionally, in Ge{sub 1?x}Sn{sub x} this is true only for low concentrations (x?Sn), consisting of a single Sn atom in the center of a Ge divacancy, which may account for the segregation of Sn at large x. Afterwards, the existence of this defect was confirmed experimentally. In this paper we study the local environment and the interactions of the substitutional defect (?-Sn), the vacancy in Ge, and the ?-Sn defect by performing extensive numerical ab initio calculations. Our results confirm that a ?-Sn defect can be formed by natural diffusion of a vacancy around the substitutional ?-Sn defect, since the energy barrier for the process is very small.

  5. Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate

    SciTech Connect (OSTI)

    Taoka, Noriyuki Fukudome, Motoshi; Takeuchi, Wakana; Arahira, Takamitsu; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2014-05-07

    The interaction of Sn atoms with defects induced by Sn implantation of Ge substrates with antimony (Sb) as an n-type dopant and the impact of H{sub 2} annealing on these defects were investigated by comparison with defects induced by Ge self-implantation. In the Ge samples implanted with either Sn or Ge, and annealed at temperatures of less than 200?C, divacancies, Sb-vacancy complexes with single or double acceptor-like states, and defects related to Sb and interstitial Ge atoms were present. On the other hand, after annealing at 500?C in an N{sub 2} or H{sub 2} atmosphere, defects with different structures were observed in the Sn-implanted samples by deep level transition spectroscopy. The energy levels of the defects were 0.33?eV from the conduction band minimum and 0.55?eV from the valence band maximum. From the capacitance-voltage (C-V) characteristics, interaction between Sn atoms and defects after annealing at 500?C was observed. The effect of H{sub 2} annealing at around 200?C was observed in the C-V characteristics, which can be attributed to hydrogen passivation, and this effect was observed in both the Ge- and Sn-implanted samples. These results suggest the presence of defects that interact with Sn or hydrogen atoms. This indicates the possibility of defect control in Ge substrates by Sn or hydrogen incorporation. Such defect control could yield high-performance Ge-based devices.

  6. Indium (In)- and tin (Sn)-based metal induced crystallization (MIC) on amorphous germanium (α-Ge)

    SciTech Connect (OSTI)

    Kang, Dong-Ho; Park, Jin-Hong

    2014-12-15

    Highlights: • In- and Sn-based MIC phenomenon on amorphous (α)-Ge is newly reported. • The In- and Sn-MIC phenomenon respectively started at 250 °C and 400 °C. • The Sn-MIC process presents higher sheet resistance and bigger crystal grains. - Abstract: In this paper, metal-induced crystallization (MIC) phenomenon on α-Ge by indium (In) and tin (Sn) are thoroughly investigated. In- and Sn-MIC process respectively started at 250 °C and 400 °C. Compared to the previously reported MIC samples including In-MIC, Sn-MIC process presented higher sheet resistance (similar to that of SPC) and bigger crystal grains above 50 nm (slightly smaller than that of SPC). According to SIMS analysis, Sn atoms diffused more slowly into Ge than In at 400 °C, providing lower density of heterogeneous nuclei induced by metals and consequently larger crystal grains.

  7. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

    SciTech Connect (OSTI)

    Senaratne, C. L.; Kouvetakis, J.; Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menndez, J.; Aoki, Toshihiro

    2014-10-07

    Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ? 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ? 0.06, the CVD precursors used were digermane Ge?H? and deuterated stannane SnD?. For y ? 0.06, the Ge precursor was changed to trigermane Ge?H?, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge?H?? as the Ge source. The photoluminescence intensity from Ge{sub 1y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 ?m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including

  8. Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

    SciTech Connect (OSTI)

    Gallagher, J. D.; Menéndez, J.; Senaratne, C. L.; Sims, P.; Kouvetakis, J.; Aoki, T.

    2015-03-02

    The emission properties of GeSn heterostructure pin diodes have been investigated. The devices contain thick (400–600 nm) Ge{sub 1−y}Sn{sub y} i-layers spanning a broad compositional range below and above the crossover Sn concentration y{sub c} where the Ge{sub 1−y}Sn{sub y} alloy becomes a direct-gap material. These results are made possible by an optimized device architecture containing a single defected interface thereby mitigating the deleterious effects of mismatch-induced defects. The observed emission intensities as a function of composition show the contributions from two separate trends: an increase in direct gap emission as the Sn concentration is increased, as expected from the reduction and eventual reversal of the separation between the direct and indirect edges, and a parallel increase in non-radiative recombination when the mismatch strains between the structure components is partially relaxed by the generation of misfit dislocations. An estimation of recombination times based on the observed electroluminescence intensities is found to be strongly correlated with the reverse-bias dark current measured in the same devices.

  9. Reliable Nanomanufacturing of Ge-Sn Alloys for Solar Energy Conversion |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The Ames Laboratory Reliable Nanomanufacturing of Ge-Sn Alloys for Solar Energy Conversion Based on the US Department of Energy's International Energy Outlook 2014 report, global consumption of energy is estimated to rise by more than 50% between 2004 and 2030. One of the biggest scientific challenges is finding a clean renewable energy resource that will replace fossil fuels and avoid adverse effects on climate, environment, and health. This project aims to advance our understanding of the

  10. The interaction between divacancies and shallow dopants in irradiated Ge:Sn

    SciTech Connect (OSTI)

    Khirunenko, L. I.; Pomozov, Yu. V.; Sosnin, M. G.; Abrosimov, N. V.; Riemann, H.

    2014-02-21

    It has been found that upon annealing of irradiated Ge doped with gallium and Sn simultaneously with disappearance of divacancies V{sub 2}{sup 0} the appearance of the new absorption spectrum consisting of sharp lines was observed. The spectrum is identical to the absorption spectrum of gallium. It is shown that the defect, to which the new spectrum corresponds, has hydrogen-like properties. The distances between the lines in the spectrum are in good agreement with those predicted by effective-mass theory. The appearance of Fano resonance in the continuum region in addition to intracenter transitions of the defect was detected. The defect found is identified as SnV{sub 2}{sup 0}Ga. The binding energy for the ground state of the SnV{sub 2}{sup 0}Ga centers has been estimated.

  11. Critical thickness for strain relaxation of Ge{sub 1−x}Sn{sub x} (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001)

    SciTech Connect (OSTI)

    Wang, Wei; Zhou, Qian; Dong, Yuan; Yeo, Yee-Chia; Tok, Eng Soon

    2015-06-08

    We investigated the critical thickness (h{sub c}) for plastic relaxation of Ge{sub 1−x}Sn{sub x} grown by molecular beam epitaxy. Ge{sub 1−x}Sn{sub x} films with various Sn mole fraction x (x ≤ 0.17) and different thicknesses were grown on Ge(001). The strain relaxation of Ge{sub 1−x}Sn{sub x} films and the h{sub c} were investigated by high-resolution x-ray diffraction and reciprocal space mapping. It demonstrates that the measured h{sub c} values of Ge{sub 1−x}Sn{sub x} layers are as much as an order of magnitude larger than that predicted by the Matthews and Blakeslee (M-B) model. The People and Bean (P-B) model was also used to predict the h{sub c} values in Ge{sub 1−x}Sn{sub x}/Ge system. The measured h{sub c} values for various Sn content follow the trend, but slightly larger than that predicted by the P-B model.

  12. Ge{sub 1−x−y}Si{sub x}Sn{sub y} light emitting diodes on silicon for mid-infrared photonic applications

    SciTech Connect (OSTI)

    Gallagher, J. D.; Xu, C.; Menéndez, J.; Senaratne, C. L.; Wallace, P. M.; Kouvetakis, J.; Aoki, T.

    2015-10-07

    This paper reports initial the demonstration of prototype Ge{sub 1−x−y}Si{sub x}Sn{sub y} light emitting diodes with distinct direct and indirect edges and high quality I-V characteristics. The devices are fabricated on Si (100) wafers in heterostructure pin geometry [n-Ge/i-Ge{sub 1−x−y}Si{sub x}Sn{sub y}/p-Ge(Sn/Si)] using ultra low-temperature (T < 300 °C) depositions of the highly reactive chemical sources Si{sub 4}H{sub 10}, Ge{sub 4}H{sub 10}, Ge{sub 3}H{sub 8}, and SnD{sub 4}. The Sn content in the i-Ge{sub 1−x−y}Si{sub x}Sn{sub y} layer was varied from ∼3.5% to 11%, while the Si content was kept constant near 3%. The Si/Sn amounts in the p-layer were selected to mitigate the lattice mismatch so that the top interface grows defect-free, thereby reducing the deleterious effects of mismatch-induced dislocations on the optical/electrical properties. The spectral responsivity plots of the devices reveal sharp and well-defined absorption edges that systematically red-shift in the mid-IR from 1750 to 2100 nm with increasing Sn content from 3.5% to 11%. The electroluminescence spectra reveal strong direct-gap emission peaks and weak lower energy shoulders attributed to indirect gaps. Both peaks in a given spectrum red-shift with increasing Sn content and their separation decreases as the material approaches direct gap conditions in analogy with binary Ge{sub 1−y}Sn{sub y} counterparts. These findings-combined with the enhanced thermal stability of Ge{sub 1−x−y}Si{sub x}Sn{sub y} relative to Ge{sub 1−y}Sn{sub y} and the observation that ternary alloy disorder does not adversely affect the emission properties—indicate that Ge{sub 1−x−y}Si{sub x}Sn{sub y} may represent a practical target system for future generations of group-IV light sources on Si.

  13. 125Te NMR chemical-shift trends in PbTeGeTe and PbTeSnTe alloys

    SciTech Connect (OSTI)

    Njegic, Bosiljka; Levin, Evgenii M.; Schmidt-Rohr, Klaus

    2013-10-08

    Complex tellurides, such as doped PbTe, GeTe, and their alloys, are among the best thermoelectric materials. Knowledge of the change in 125Te NMR chemical shift due to bonding to dopant or solute atoms is useful for determination of phase composition, peak assignment, and analysis of local bonding. We have measured the 125Te NMR chemical shifts in PbTe-based alloys, Pb1?xGexTe and Pb1?xSnxTe, which have a rocksalt-like structure, and analyzed their trends. For low x, several peaks are resolved in the 22-kHz MAS 125Te NMR spectra. A simple linear trend in chemical shifts with the number of Pb neighbors is observed. No evidence of a proposed ferroelectric displacement of Ge atoms in a cubic PbTe matrix is detected at low Ge concentrations. The observed chemical shift trends are compared with the results of DFT calculations, which confirm the linear dependence on the composition of the first-neighbor shell. The data enable determination of the composition of various phases in multiphase telluride materials. They also provide estimates of the 125Te chemical shifts of GeTe and SnTe (+970 and +400150 ppm, respectively, from PbTe), which are otherwise difficult to access due to Knight shifts of many hundreds of ppm in neat GeTe and SnTe.

  14. Enhanced carrier mobility and direct tunneling probability of biaxially strained Ge{sub 1−x}Sn{sub x} alloys for field-effect transistors applications

    SciTech Connect (OSTI)

    Liu, Lei; Liang, Renrong E-mail: junxu@tsinghua.edu.cn; Wang, Jing; Xu, Jun E-mail: junxu@tsinghua.edu.cn

    2015-05-14

    The carrier transport and tunneling capabilities of biaxially strained Ge{sub 1−x}Sn{sub x} alloys with (001), (110), and (111) orientations were comprehensively investigated and compared. The electron band structures of biaxially strained Ge{sub 1−x}Sn{sub x} alloys were calculated by the nonlocal empirical pseudopotential method and the modified virtual crystal approximation was adopted in the calculation. The electron and hole effective masses at the band edges were extracted using a parabolic line fit. It is shown that the applied biaxial strain and the high Sn composition are both helpful for the reduction of carrier effective masses, which leads to the enhanced carrier mobility and the boosted direct band-to-band-tunneling probability. Furthermore, the strain induced valance band splitting reduces the hole interband scattering, and the splitting also results in the significantly enhanced direct tunneling rate along the out-of-plane direction compared with that along the in-plane direction. The biaxially strained (111) Ge{sub 1−x}Sn{sub x} alloys exhibit the smallest band gaps compared with (001) and (110) orientations, leading to the highest in-plane and out-of-plane direct tunneling probabilities. The small effective masses on (110) and (111) planes in some strained conditions also contribute to the enhanced carrier mobility and tunneling probability. Therefore, the biaxially strained (110) and (111) Ge{sub 1−x}Sn{sub x} alloys have the potential to outperform the corresponding (001) Ge{sub 1−x}Sn{sub x} devices. It is important to optimize the applied biaxial strain, the Sn composition, and the substrate orientation for the design of high performance Ge{sub 1−x}Sn{sub x} field-effect transistors.

  15. GeP and (Ge{sub 1−x}Sn{sub x})(P{sub 1−y}Ge{sub y}) (x≈0.12, y≈0.05): Synthesis, structure, and properties of two-dimensional layered tetrel phosphides

    SciTech Connect (OSTI)

    Lee, Kathleen; Synnestvedt, Sarah; Bellard, Maverick; Kovnir, Kirill

    2015-04-15

    GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The layered crystal structures of these compounds were characterized by single crystal X-ray diffraction. Both phosphides crystallize in a GaTe structure type in the monoclinic space group C2/m (No. 12) with GeP: a=15.1948(7) Å, b=3.6337(2) Å, c=9.1941(4) Å, β=101.239(2)°; Ge{sub 0.93(3)}P{sub 0.95(1)}Sn{sub 0.12(3)}: a=15.284(9) Å, b=3.622(2) Å, c=9.207(5) Å, β=101.79(1)°. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Each layer is built of Ge–Ge dumbbells surrounded by a distorted antiprism of phosphorus atoms. Sn-doped GeP has a similar structural motif, but with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Graphical abstract: Layered phosphides GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Sn-doped GeP has a similar structural motif with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Highlights: • GeP crystallizes in a layered crystal structure. • Doping of Sn into GeP causes large structural distortions. • GeP is narrow bandgap semiconductor. • Sn-doped GeP exhibits an order of magnitude higher resistivity due to disorder.

  16. Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration

    SciTech Connect (OSTI)

    Li, Haofeng; Brouillet, Jeremy; Wang, Xiaoxin; Liu, Jifeng

    2014-11-17

    We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450 °C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18 μm long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.

  17. Magnetic phase transitions and electrical switching in Gd5(Sn0.3Ge3.7) induced by magnetic field

    SciTech Connect (OSTI)

    Levin, E. M.

    2013-08-01

    Temperature and magnetic field dependences of the magnetization and electrical resistivity of zero-field-cooled (ZFC) Gd5(Sn0.3Ge3.7) with a distinctly layered crystal structure have been studied. The unit cell of Gd5Ge4-based compounds is formed by 2D-like fragments, so-called slabs. Between 4.2 and 17 K, ZFC Gd5(Sn0.3Ge3.7) shows an antiferromagnetic state [AFM(I)], which can be irreversibly transformed by a magnetic field to the ferromagnetic (FM) state. The critical magnetic field required for the irreversible AFM(I)-FM transition in Gd5(Sn0.3Ge3.7) at 4.2 K is 38 kOe, which is 2-fold larger than observed in Gd5Ge4, 19 kOe. Additionally, ZFC Gd5 Sn0.3Ge3.7) above ˜30K shows another antiferromagnetic state [AFM(II)], which can be reversibly transformed by a magnetic field to the FM state. The difference between FM(I) and AFM(II) states (phases) in Gd5(Sn0.3Ge3.7) can be attributed to the orientation of Gd magnetic moments, i.e., their orientation perpendicular or parallel to the slabs. In the temperature range of 17 K≤T≤30 K, both AFM(I) and FM(II) states (phases) may coexist in the alloy and can be irreversibly or reversibly transformed to the FM state. Magnetic phase transitions in Gd5(Sn0.3Ge3.7) are accompanied with reversible or irreversible switching between the low- [AFM(I) and AFM(II)] and high-resistivity (FM) states.

  18. Thermoelectric and microstructural properties of Pb{sub 0.9-x}Sn{sub 0.1}Ge{sub x}Te compounds prepared by spinodal decomposition

    SciTech Connect (OSTI)

    Sondergaard, M.; Christensen, M.; Johnsen, S. [Center for Energy Materials, Department of Chemistry and iNANO, Aarhus University, DK-8000 Aarhus C (Denmark); Stiewe, C.; Dasgupta, T.; Mueller, E. [German Aerospace Center (DLR), Linder Hoehe, DE-51147 Cologne (Germany); Iversen, B.B., E-mail: bo@chem.au.d [Center for Energy Materials, Department of Chemistry and iNANO, Aarhus University, DK-8000 Aarhus C (Denmark)

    2011-05-15

    Three samples of Pb{sub 0.9-x}Sn{sub 0.1}Ge{sub x}Te with x=0.25, 0.35, 0.6 were prepared by heating the mixtures above the melting point of the constituent elements followed by quenching in water. The x=0.6 sample is close to the center of the immiscibility region, while the x=0.25 and 0.35 samples are in the Pb rich region inside the spinodal miscibility gap. Microstructural investigations using Powder X-ray Diffraction, Scanning Electron Microscopy and Energy Dispersive X-ray Spectroscopy revealed both GeTe-rich and PbTe-rich phases. The samples were uniaxially hot pressed and the thermoelectric properties were characterized in the temperature range 2-400 K using a commercial apparatus and from 300 to 650 K with a custom designed setup. The best sample (x=0.6) reached zT{approx}0.6 at 650 K, while the x=0.25 and 0.35 samples showed thermal instability at elevated temperatures. -- Graphical abstract: Spinodal decomposition in the GeTe-SnTe-PbTe system demonstrated by SEM and EXS images. Display Omitted Highlights: {yields} Investigation of Pb-rich part of the spinodal miscibility gap in PbTe-SnTe-GeTe. {yields} zT=0.6 at 650 K reproduced for Pb{sub 0.3}Sn{sub 0.1}Ge{sub 0.6}Te. {yields} Pb-rich phases shown to be thermally instable. {yields} Thermoelectric property characterization at low and high temperature. {yields} Microstructural investigations using PXRD, SEM, EDX and PSM.

  19. D{sub 3h} [A-CE{sub 3}-A]{sup −} (E = Al and Ga, A = Si, Ge, Sn, and Pb): A new class of hexatomic mono-anionic species with trigonal bipyramidal carbon

    SciTech Connect (OSTI)

    Wu, Yan-Bo E-mail: zxwang@ucas.ac.cn; Li, Yan-Qin; Bai, Hui; Lu, Hai-Gang; Li, Si-Dian; Zhai, Hua-Jin; Wang, Zhi-Xiang E-mail: zxwang@ucas.ac.cn

    2014-03-14

    The non-classical trigonal bipyramidal carbon (TBPC) arrangement generally exists as transition states (TSs) in nucleophilic bimolecular substitution (S{sub N}2) reactions. Nevertheless, chemists have been curious about whether such a carbon bonding could be stable in equilibrium structures for decades. As the TBPC arrangement was normally realized as cationic species theoretically and experimentally, only one anionic example ([At-C(CN){sub 3}-At]{sup −}) was computationally devised. Herein, we report the design of a new class of anionic TBPC species by using the strategy similar to that for stabilizing the non-classical planar hypercoordinate carbon. When electron deficient Al and Ga were used as the equatorial ligands, eight D{sub 3h} [A-CE{sub 3}-A]{sup −} (E = Al and Ga, A = Si, Ge, Sn, and Pb) TBPC structures were found to be the energy minima rather than TSs at both the B3LYP and MP2 levels. Remarkably, the energetic results at the CCSD(T) optimization level further identify [Ge-CAl{sub 3}-Ge]{sup −} and [Sn-CGa{sub 3}-Sn]{sup −} even to be the global minima and [Si-CAl{sub 3}-Si]{sup −} and [Ge-CGa{sub 3}-Ge]{sup −} to be the local minima, only slightly higher than their global minima. The electronic structure analyses reveal that the substantial ionic C–E bonding, the peripheral E–A covalent bonding, and the axial mc-2e (multi center-two electrons) bonding play roles in stabilizing these TBPC structures. The structural simplicity and the high thermodynamic stability suggest that some of these species may be generated and captured in the gas phase. Furthermore, as mono-anionic species, their first vertical detachment energies are differentiable from those of their nearest isomers, which would facilitate their characterization via experiments such as the negative ion photoelectron spectroscopy.

  20. Phase stabilities of pyrite-related MTCh compounds (M=Ni, Pd, Pt; T=Si, Ge, Sn, Pb; Ch=S, Se, Te): A systematic DFT study

    SciTech Connect (OSTI)

    Bachhuber, Frederik; Krach, Alexander; Furtner, Andrea; Söhnel, Tilo; Peter, Philipp; Rothballer, Jan; Weihrich, Richard

    2015-03-15

    Pyrite-type and related systems appear for a wide range of binary and ternary combinations of transition metals and main group elements that form Zintl type dumbbell anion units. Those representatives with 20 valence electrons exhibit an extraordinary structural flexibility and interesting properties as low-gap semiconductors or thermoelectric and electrode materials. This work is devoted to the systematic exploration of novel compounds within the class of MTCh compounds (M=Ni, Pd, Pt; T=Si, Ge, Sn, Pb; Ch=S, Se, Te) by means of density functional calculations. Their preferred structures are predicted from an extended scheme of colored pyrites and marcasites. To determine their stabilities, competing binary MT{sub 2} and MCh{sub 2} boundary phases are taken into account as well as ternary M{sub 3}T{sub 2}Ch{sub 2} and M{sub 2}T{sub 3}Ch{sub 3} systems. Recently established stability diagrams are presented to account for MTCh ordering phenomena with a focus on a not-yet-reported ordering variant of the NiAs{sub 2} type. Due to the good agreement with experimental data available for several PtTCh systems, the predictions for the residual systems are considered sufficiently accurate. - Graphical abstract: Compositional and structural stability of MTCh compounds is investigated from first principle calculations. A conceptional approach is presented to study and predict novel stable and metastable compounds and structures of low gap semiconductors with TCh dumbbell units that are isoelectronic and structurally related to pyrite (FeS{sub 2}). - Highlights: • Study of compositional stability of MTCh vs. M{sub 3}T{sub 2}Ch{sub 2} and M{sub 2}T{sub 3}Ch{sub 3} compounds. • Study of structural stability of known and novel MTCh compounds. • Prediction of novel stable and metastable structures and compounds isoelectronic to pyrite, FeS{sub 2}.

  1. GE Global Research Contact | GE Global Research

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    Contact Us Looking for more details? Please contact one of these individuals or visit the Newsroom for the latest information. Home > About GE Global Research > Contact Us GE Global Research 1 Research Circle, Niskayuna, NY 12309, USA Todd Alhart +1.518.387.7914 todd.alhart@ge.com Communications and Public Relations GE Brazil Technology Center Rua Trinta e Seis (Praia dos Coqueiros), s/n, Supl. Ilha do Bom Jesus 840 Ilha do Fundão - Cidade Universitária Rio de Janeiro, RJ - CEP 21941-593

  2. Local density functional calculations of the electronic structures of the intermetallic systems U{sub 2}Fe{sub 2}Sn and UFe{sub 2}Ge{sub 2}

    SciTech Connect (OSTI)

    Matar, S.F.; Chevalier, B.; Etourneau, J.; Eyert, V.

    1997-02-05

    The electronic structures of U{sub 2}Fe{sub 2}Sn and UFe{sub 2}Ge{sub 2} are self-consistently calculated within the local density functional theory using the augmented spherical wave (ASW) method. Calculations are scalar relativistic. The experimentally observed Pauli paramagnetic behavior of the two systems is accounted for and the influence of hybridization between the different l-states on the chemical bonding is discussed from the site-projected densities of states (DOS) as well as from the modulation of the DOS by the sign and magnitude of the overlap integral, i.e., with the so-called COOP. From this, we propose a mechanism for the evolution of bonding within the series to which the two compounds belong. 12 refs., 3 figs.

  3. GE Global Research News | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Formation Du... grid 2014.12.09 GE, Utility, Government, and Academia Partner on Microgrid Project Purdue-GE Adv Mfg Screen Dress jpg 2014.12.04 Purdue, GE to collaborate on ...

  4. GE Global Research Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    About GE Global Research > Leadership Leadership GE Global Research Centers rely on the guidance of visionary leaders with deep technical knowledge on the ground at each of our sites. A photo of Vic Abate Vic Abate Chief Technology Officer GE Global Research As senior vice president and chief technology officer for GE, Vic is responsible for one of the world's largest and most diversified industrial research and technology organizations. Vic leads GE's 50,000 engineers and scientists and G...

  5. GE Research and Development | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    new capabilities in 3D Printing and higher jet engine efficiency More GE Puts Desalination "on Ice" to Produce Clean Water at Low Cost More GE's US1 billion investment in ...

  6. Moving | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Read More GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today presented new research findings on its nanotextured anti-icing surfaces. In ...

  7. GE Global Research Careers | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Careers The best and brightest minds in science and technology make breakthroughs daily at GE Global Research. Are you ready to join our team? Job Search Location Location Bangalore, India Dhahran, Saudi Arabia Munich, Germany Niskayuna, USA Oklahoma City, USA Rio de Janeiro, Brazil Shanghai, China Tirat Carmel, Israel Keyword Search Jobs » View All Jobs Keep in Touch With GE Global Research Careers Home > Careers Why GE careers_why_GE GE works on things that matter. The best people and the

  8. GE Capital Partnership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Global Research and GE Capital: Middle Market Collaboration Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Global Research and GE Capital: Middle Market Collaboration In 2013, a partnering initiative between Global Research and GE Capital resulted in dozens of middle market companies collaborating with Global Research

  9. GE Global Research Locations | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Locations GE Global Research is innovating around the clock. Select one of our locations to learn more about operations there.GE Global Research is innovating around the clock. Select a location to learn more about our operations. Home > Locations GE Global Research is ALWAYS OPEN Already know about our locations? Experience a special look at a day in our life around the world! See What We're Doing Dhahran, Saudi Arabia Founded: 2015 Employees: 15 Focus Areas: Material Characterization,

  10. GE Researchers Tackle Three Unimpossible Missions | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Unimpossible Missions: GE researchers prove nothing is impossible Click to ... Unimpossible Missions: GE researchers prove nothing is impossible A team of GE researchers ...

  11. GE Researcher Discusses Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Researcher: Putting GE Beliefs into Action Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Researcher: Putting GE Beliefs into Action Joseph Vinciquerra 2015.01.30 Several weeks ago I had the privilege of attending the 2015 Global Leadership Meeting held near Lake George, New York. As a first time attendee, I

  12. GE and Quirky | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    introduces a whole new way of inventing. We teamed up with Quirky, the social product development company, to give everyday inventors access to GE's patents to inspire new...

  13. Moving | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Moving We're always working on planes, trains and automobiles-and specialized ways to move people and products efficiently and sustainably. Home > Impact > Moving Rail Networks Are Getting Smarter Sources: 2012 GE Annual Report (page 12); Norfolk Southern 2010 sustainability reporter (page 17) North American Freight Railroad... Read More » The GE Store for Technology is Open for Business Welcome to GE Global Research, also known as the GE Store for Technology. Across our global network of

  14. Building | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Building We're creating infrastructure, refining materials and assembling technologies that accommodate our constantly changing world. Home > Impact > Building Global Research and GE Capital: Middle Market Collaboration In 2013, a partnering initiative between Global Research and GE Capital resulted in dozens of middle market companies... Read More » How Green Is Green? GE's Global Research Center's Ecoassessment Center of Excellence was created to study the impact of GE products and

  15. Connecting | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Connecting Through software, the Industrial Internet and the sharing of ideas, we're bringing people together all around the world. Home > Impact > Connecting GE Software's Design and User Experience Studio Looking to the future, GE created the Design and Experience Studio dedicated to developing clean, delightful, understandable, and... Read More » Predix(tm): GE's Software Platform for the Industrial Internet A cornerstone of the GE Software Center efforts to advance the Industrial

  16. Curing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Curing We're pioneering medical developments, from robotic healthcare assistants to diagnostic tools and specialized, globally deployed gear. Home > Impact > Curing Crowdsourcing Software Platform Wins Award GE Global Research, the technology development arm of the General Electric Company (NYSE: GE) today announced that it has won a... Read More » GE Unveils High-Tech Superhero, GENIUS MAN Created on earth to inspire the next generation of scientists and engineers, a team of GE

  17. Proteus-SN user manual

    SciTech Connect (OSTI)

    Shemon, Emily R.; Smith, Micheal A.; Lee, Changho

    2015-07-31

    This user manual describes how to set up a neutron transport simulation with the PROTEUS-SN code. A companion methodology manual describes the theory and algorithms within PROTEUS-SN.

  18. Powering | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE have pioneered a technical breakthrough called DCJ... Read More Sodium Battery Technology Improves Performance and Safety Imagination and innovation have always been in ...

  19. Predix | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Predix(tm): GE's Software Platform for the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Predix(tm): GE's Software Platform for the Industrial Internet A cornerstone of the GE Software Center efforts to advance the Industrial Internet is Predix(tm), GE's software platform for the Industrial

  20. The low-temperature form of calcium gold stannide, CaAuSn

    SciTech Connect (OSTI)

    Lin, Qisheng; Corbett, John D.

    2014-07-19

    The EuAuGe-type CaAuSn phase has been synthesized and single-crystal X-ray diffraction analysis reveals that it has an ortho­rhom­bic symmetry (space group Imm2), with a = 4.5261 (7) Å, b = 7.1356 (11) Å and c = 7.8147 (11) Å. The structure features puckered layers that are connected by homoatomic Au-Au and Sn-Sn inter­layer bonds. This structure is one of the two parent structures of its high-temperature polymorph (ca 873 K), which is an inter­growth structure of the EuAuGe- and SrMgSi-type structures in a 2:3 ratio.

  1. GE Get Fit | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Get Fit Program Attracts Adventurers Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Get Fit Program Attracts Adventurers Jim Bray 2012.10.02 In the past few weeks, we've shared #GetFit stories from our Global Research sites in Niskayuna, San Ramon and Shanghai. GE Healthcare's #getfit campaign is a social media

  2. What is the GE store |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    materials, software, and analytics to commercialization, process, and business model best practices. The GE Store allows GE to leapfrog industries, to drive innovation,...

  3. Photonics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > The Photonics Lab at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The Photonics Lab at GE Global Research Loucas Tsakalakos, the Photonics lab manager at GE Global Research, introduces photonics and shares the lab's work on innovative ways to use light. You Might Also Like

  4. SN Power Brasil | Open Energy Information

    Open Energy Info (EERE)

    SN Power Brasil Jump to: navigation, search Name: SN Power Brasil Place: Rio de Janeiro, Rio de Janeiro, Brazil Zip: 22290-160 Sector: Renewable Energy Product: Brazilian...

  5. GE Global Research News | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Newsroom Our technologies transform GE's businesses and the world. Learn about them, meet our experts and read news coverage about our work. Home > Newsroom Meet Our Experts Our scientists are global leaders in their fields. They welcome media inquiries. Find an Expert » Media Contacts A photograph of Natalia Albuquerque Rio de Janeiro Natalia Albuquerque +55 21 3548-6193 A photograph of Todd Alhart Niskayuna, Oklahoma City, Munich Todd Alhart +1.518.387.7914 A photograph of Laura Bauer

  6. GE Global Research News | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Newsroom Our technologies transform GE's businesses and the world. Learn about them, meet our experts and read news coverage about our work. Home > Newsroom Meet Our Experts Our scientists are global leaders in their fields. They welcome media inquiries. Find an Expert » Media Contacts A photograph of Natalia Albuquerque Rio de Janeiro Natalia Albuquerque +55 21 3548-6193 A photograph of Todd Alhart Niskayuna, Oklahoma City, Munich Todd Alhart +1.518.387.7914 A photograph of Laura Bauer

  7. Thermal properties of UPdSn and UCuSn

    SciTech Connect (OSTI)

    Kawanaka, H. [Electrotechnical Lab., Tsukuba (Japan). Electron Physics Section; Nakotte, H. [Electrotechnical Lab., Tsukuba (Japan). Electron Physics Section]|[Los Alamos National Lab., NM (United States). Manual Lujan Jr. Neutron Scattering Center; Brueck, E.; Prokes, K.; Kim-Ngan, N.H. [Univ. of Amsterdam (Netherlands). Van der Waals-Zeeman Inst.; Takabatake, T.; Fujii, H. [Hiroshima Univ., Highashi-Hiroshima (Japan). Faculty of Integrated Arts and Sciences; Sakurai, J. [Toyama Univ. (Japan). Faculty of Science

    1996-09-01

    The authors report on the specific-heat and the thermopower of UPdSn and UCuSn, both of which order antiferromagnetically at low temperatures. Both compounds show similar behavior in the specific heat, and the large magnetic-entropy changes around T{sub N} are evidence for a large degree of 5f-electron localizations. The thermopower, on the other hand, behaves very different in the two compounds. While prominent features are seen in the temperature dependence of the thermopower of UCuSn, only weak changes are observed for UPdSn. This may indicate that, for these compounds, the thermopower response is due to mechanisms other than purely magnetic ones.

  8. GE Hitachi Nuclear Energy | Open Energy Information

    Open Energy Info (EERE)

    GE Hitachi Nuclear Energy Jump to: navigation, search Name: GE Hitachi Nuclear Energy Place: Wilmington, North Carolina Zip: 28402 Sector: Efficiency, Services Product: GE Hitachi...

  9. New Medical Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  10. New Transportation Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  11. New Energy Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  12. GE leads the way in photonics research | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE continues leading role in photonics industry - from LED to digital x-ray Click to email ... GE continues leading role in photonics industry - from LED to digital x-ray Danielle ...

  13. Working at GE Global Research | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Why GE Why GE Fostering curiosity and work that makes a big impact on the world. That's how GE helps keep talented researchers motivated. Inspire For our scientists, inspiration can come from a rock or a sunset or a supercomputer. But mostly it comes from our dream of what the future can be. A world that's cleaner, greener, more efficient, more intelligent and more connected, where people have greater access to essentials like energy, water and healthcare. A better world. Innovate GE Global

  14. GE | OpenEI Community

    Open Energy Info (EERE)

    by Jessi3bl(15) Member 16 December, 2012 - 19:18 GE, Clean Energy Fuels Partner to Expand Natural Gas Highway clean energy Clean Energy Fuels energy Environment Fuel GE Innovation...

  15. Chevron, GE form Technology Alliance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Chevron, GE form Technology Alliance February 3, 2014 HOUSTON, TX, Feb. 3, 2014-Chevron Energy Technology Company and GE Oil & Gas announced today the creation of the Chevron GE Technology Alliance, which will develop and commercialize valuable technologies to solve critical needs for the oil and gas industry. The Alliance builds upon a current collaboration on flow analysis technology for oil and gas wells. It will leverage research and development from GE's newest Global Research Center,

  16. Building | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Building We're creating infrastructure, refining materials and assembling technologies that accommodate our constantly changing world. Home > Impact > Building A Quirky Idea: Turning Patents Into Consumer Products In April 2013, GE and Quirky announced a partnership that introduces a whole new way of inventing. We teamed up with Quirky, the... Read More » Advanced Laser Manufacturing Tools Deliver Higher Performance In a research lab looking far, far into the future, a team of scientists

  17. Building | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Building We're creating infrastructure, refining materials and assembling technologies that accommodate our constantly changing world. Home > Impact > Building Rio 2016 Olympic Games' technologies You cannot imagine how far GE reaches into the Rio 2016 Olympic Games. The technologies (visible and invisible) that will light,... Read More » Bringing a Digital Mindset to Manufacturing The digital age will provide manufacturing insights that will save money and transform how we work across

  18. Curing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Curing We're pioneering medical developments, from robotic healthcare assistants to diagnostic tools and specialized, globally deployed gear. Home > Impact > Curing Invention Factory: How Will We Live Forever? In this episode of Invention Factory - a partnership between GE and Vice - we probe the cutting edge of medical... Read More » Invention Factory: How Will Mind Overcome Matter? In this episode of Invention Factory - a partnership between General Electric and Vice - we explore how

  19. Invention | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Invention Our people drive every scientific advance we make, every day. Find out who they are and what they're thinking right now. Home > Invention Inventors GE Global Research Centers are home to many of the world's brightest, most inquisitive minds in science and technology. Meet our people » Stump the Scientist Ask us your question about science or technology. Then check back often to see what our scientists say! Leave them speechless » Edison's Desk Blog Curious about researchers'

  20. GE's Digital Marketplace to Revolutionize Manufacturing | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research GE's Digital Marketplace to Revolutionize Manufacturing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's Digital Marketplace to Revolutionize Manufacturing GE will lead an effort to create an online community for manufacturing collaboration and data analysis The open source project will build the

  1. GE MEMS for LTE Advanced Mobile Devices | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE MEMS Switch Technology Demonstrates Performance Which Could Meet Demands for ... longer battery life, and the advanced RF designs required of LTE-Advanced devices. ...

  2. GE Opens Research Center in Saudi Arabia | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE's US1 billion investment in Saudi Arabia creates a path for new initiatives in localization, technology innovation and manufacturing to drive country's digital transformation...

  3. Israel: A Source of Innovation for GE |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Israel: A Source of Innovation for GE Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Israel: A Source of Innovation for GE Oded Meirav 2014.05.22 Unlike other research organizations within GE Global Research, my team is not tasked with developing technology for GE's businesses. Instead...we hunt! Our job is to identify

  4. Purdue, GE Collaborate On Advanced Manufacturing | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... In addition to DMDI, Purdue is involved in providing skills and training support for the new jet engine assembly facility GE Aviation is building in neighboring Lafayette, Indiana. ...

  5. Open Innovation | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    U.S., India, China, Germany, Brazil and Israel, we have more than 300 collaborations ... View the Popular Science article to learn more. GE's Israel Technology Center: Advancing ...

  6. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Predictivity(tm) Industrial Internet Solutions Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Predictivity(tm) Industrial Internet Solutions As a key player in GE's commitment to advance the Industrial Internet, the GE Software Center is at work helping industrial organizations use data, analytics, data

  7. Chevron, GE form Technology Alliance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... For example, GE flow meter products will be developed incorporating the Swept Frequency Acoustic Interferometry (SFAI) metering technology incubated in an alliance between Chevron ...

  8. Magnetic Refrigeration | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Johnson, a materials scientist and project leader on GE's magnetic refrigeration project. ... materials would further improve the competitiveness of magnetic refrigeration technology. ...

  9. Flying Cars | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe ...

  10. A family of GE engineers | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A family of GE engineers Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) A family of GE engineers Father's Day is a time dedicated to celebrating family ties. In the GE family, there are many types of relationships and connections, including some that originated in the same household. Meet Monte and children, Ashlee and

  11. GE Innovation and Manufacturing in Europe | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovation and Manufacturing in Europe Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Innovation and Manufacturing in Europe Click the image below to see how GE is at work across Europe to change the face of manufacturing. EU graphic You Might Also Like 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN »

  12. GE Partners on Microgrid Project | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, Utility, Government, and Academia Partner on Microgrid Project Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, Utility, Government, and Academia Partner on Microgrid Project GE Awarded a $1.2M Department of Energy Grant to Design Technology to Keep Electricity Flowing after Catastrophic Weather Events NISKAYUNA,

  13. GE Scientists Experiment With Texas BBQ | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE BBQ Center is open, innovating and serving some delicious BBQ Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The GE BBQ Center is open, innovating and serving some delicious BBQ Lynn DeRose 2015.03.15 This is the third in a five-part series of dispatches from GE's Science of Barbecue Experience at South by

  14. Ars Technica Visits GE's China Technology Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technica visits GE's China Technology Center Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Ars Technica visits GE's China Technology Center Ars Technica visited GE's China Technology Center in Shanghai to discover what type of research is being conducted at the facility. The visit was a part of Ars Technica's Chasing

  15. GE Researchers Tackle Three Unimpossible Missions | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Unimpossible Missions: GE researchers prove nothing is impossible Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Unimpossible Missions: GE researchers prove nothing is impossible A team of GE researchers came together over the course of several months to tackle three seemingly impossible missions.

  16. GE Solar Power | Open Energy Information

    Open Energy Info (EERE)

    GE Solar Power Jump to: navigation, search Name: GE Solar Power Place: Delaware Sector: Solar Product: String representation "The solar busin ... s in July 2004." is too long....

  17. Miniaturized Turbine Offers Desalination Solution | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    integrating GE's experience with steam turbine, oil & gas compressors, 3D printing and ... GE is a world leader in the development and application of steam turbine technology, with ...

  18. GE Wind Energy Germany | Open Energy Information

    Open Energy Info (EERE)

    Energy Germany Jump to: navigation, search Name: GE Wind Energy Germany Place: Salzbergen, Germany Zip: 48499 Sector: Wind energy Product: Germany-based, division of GE Wind Energy...

  19. New Energy Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today presented new research findings on its nanotextured anti-icing surfaces. In ...

  20. GE Scientists Experiment With Texas BBQ | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE BBQ Center is open, innovating and serving some delicious BBQ Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens ...

  1. Heat Transfer in GE Jet Engines | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Heat Transfer in GE Jet Engines Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on ...

  2. GE Awarded DOE Funding to Pilot Carbon Capture Technology | GE...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Awarded DOE Project to Pilot CO2 Capture Technology for Power Plants Click to email this ... GE Awarded DOE Project to Pilot CO2 Capture Technology for Power Plants Same class of ...

  3. GE Researcher Explores Science Behind Movie Chappie | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  4. GE Develops High Water Recovery Technology in China | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Develops High Water Recovery Technology in China Click to email this to a friend (Opens in ... GE Develops High Water Recovery Technology in China Technology aims to boost development ...

  5. Laser Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laser Manufacturing at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Laser Manufacturing at GE Global Research Learn how laser sintering, an additive laser manufacturing process practiced at GE Global Research, makes parts from metal powder. You Might Also Like Munich_interior_V 10 Years ON: From

  6. Toolkit Model for SN-03 Final Proposal (ratecases/sn03)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Model SN CRAC ToolKit Model Variable, Flat SN CRAC, 80% TPP (TK187SN-03FS3BPA-PropVariableFlatSNN24-Jun-03.xls, 3.1 MB) Data Input Files (required to run the above...

  7. TEE-0077- In the Matter of GE Appliances & Lighting

    Broader source: Energy.gov [DOE]

    The Decision and Order considers and Application for Exception filed by GE Appliances & Lighting (GE)

  8. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Predictivity(tm) Industrial Internet Solutions Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) ...

  9. Technical Education | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technical Education at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click...

  10. Aviation Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More Innovation 247: We're Always Open At GE Global Research, we work around the clock and across the globe to build, power, move and cure the world. Click the image... ...

  11. Airline Efficiency | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    reduce their operating costs and environmental footprint. You Might Also Like IMG0475 Innovation 247: We're Always Open direct write2square The GE Store for Technology is...

  12. Hybrid Locomotive | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Over the last decade, the U.S. government has enacted a number of rules designed to reduce smog and air pollution in cities and towns. For locomotive makers, like GE, that means ...

  13. High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kumar, E. Senthil; Mohammadbeigi, F.; Boatner, Lynn A.; Watkins, S. P.

    2016-03-18

    Here, Group IV donors in ZnO are poorly understood, despite evidence that they are effective n-dopants. We present high-resolution photoluminescence spectroscopy studies of unintentionally doped and Sn doped ZnO single crystals grown by the chemical vapor transport method. Doped samples showed greatly increased emission from the I10 bound exciton transition which was recently proven to be related to the incorporation of Sn impurities based on radio-isotope studies. PL linewidths are exceptionally sharp for these samples, enabling clear identification of several donor species. Temperature dependent PL measurements of the I10 line emission energy and intensity dependence reveal a behavior similar tomore » other shallow donors in ZnO. Ionized donor bound exciton and two electron satellite transitions of the I10 transition are unambiguously identified and yield a donor binding energy of 71 meV. In contrast to recent reports of Ge-related donors in ZnO, the spectroscopic binding energy for the Sn-related donor bound exciton follows a linear relationship with donor binding energy (Haynes rule), confirming the shallow nature of this defect center, which we attribute to a SnZn double donor compensated by an unknown single acceptor.« less

  14. SN-03 Rate Case Workshops (rates/meetings)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials Related Link: SN-03 Power Rate Case May 1 & 13, 2003 - Debt and Liquidity Strategies workshops (on BPA Corporate web site) March 27, 2003 - SN CRAC Prescheduling...

  15. Orientation epitaxy of Ge1–xSnx films grown on single crystal CaF2 substrates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    A. J. Littlejohn; Zhang, L. H.; Lu, T. -M.; Kisslinger, K.; and Wang, G. -C.

    2016-03-15

    Ge1–xSnx films were grown via physical vapor deposition below the crystallization temperature of Ge on single crystal (111) and (100) CaF2 substrates to assess the role of Sn alloying in Ge crystallization. By studying samples grown at several growth temperatures ranging from 250 °C to 400 °C we report temperature-dependent trends in several of the films' properties. X-ray diffraction theta vs. two-theta (θ/2θ) scans indicate single orientation Ge1–xSnx(111) films are grown on CaF2(111) substrates at each temperature, while a temperature-dependent superposition of (111) and (100) orientations are exhibited in films grown on CaF2(100) above 250 °C. This is the firstmore » report of (111) oriented Ge1–xSnx grown on a (100) oriented CaF2 substrate, which is successfully predicted by a superlattice area matching model. These results are confirmed by X-ray diffraction pole figure analysis. θ/2θ results indicate substitutional Sn alloying in each film of about 5%, corroborated by energy dispersive spectroscopy. In addition, morphological and electrical properties are measured by scanning electron microscopy, atomic force microscopy and Hall mobility measurements and are also shown to be dependent upon growth temperature.« less

  16. GE partners with 'Girls Who Code' for summer program | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SAN RAMON, CA-June, 18 2015 - GE Software (NYSE: GE) announced today it will partner with ... The GE Software curriculum includes workshops on design thinking and user experience, ...

  17. GE Opens Research Center in Saudi Arabia | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE's US$1 billion investment in Saudi Arabia creates a path for new initiatives in localization, technology innovation and manufacturing to drive country's digital transformation by 2020 Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's US$1 billion investment in Saudi Arabia creates a path for new initiatives in

  18. GE Researcher Explores Science Behind Movie Chappie | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic The film "Chappie" is the story of a Police droid, reprogrammed to become

  19. GE leads the way in photonics research | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE continues leading role in photonics industry - from LED to digital x-ray Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE continues leading role in photonics industry - from LED to digital x-ray Danielle Merfeld, Ph.D. 2015.07.27 Vice President Joseph Biden joined New York Gov. Andrew Cuomo in Rochester, New York

  20. GE Key Partner in Innovation Institutes | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Is Key Partner in Manufacturing Innovation Institutes Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Is Key Partner in Manufacturing Innovation Institutes GE Global Research 2014.02.25 President Obama today announced two new manufacturing innovation institutes. One is focused on digital manufacturing and design

  1. 12 GeV! | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GeV! 12 GeV! December 21, 2015 Our upgrade project is called the 12 GeV CEBAF Upgrade Project. At the time CD-4A was achieved, we demonstrated 2.2 GeV per pass. This was 12 GeV! Well, not quite. In fact with more than one pass, we limited ourselves to a little more than 6 GeV with three passes, and to 10.5 GeV with 5.5 passes. It was not felt to be prudent to demand 12 GeV out of the machine immediately after turn on. Operations in the spring of 2015 at high energy, ~10.5 GeV, came to a

  2. Sodium Battery | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sodium Battery Technology Improves Performance and Safety Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Sodium Battery Technology Improves Performance and Safety Imagination and innovation have always been in GE's DNA. While exploring the expanded use of hybrid power in the rail, mining and marine industries, GE began

  3. Milford Wind Corridor Phase I (GE Energy) | Open Energy Information

    Open Energy Info (EERE)

    I (GE Energy) Jump to: navigation, search Name Milford Wind Corridor Phase I (GE Energy) Facility Milford Wind Corridor Phase I (GE Energy) Sector Wind energy Facility Type...

  4. Northern Colorado Wind Energy Center (GE) | Open Energy Information

    Open Energy Info (EERE)

    GE) Jump to: navigation, search Name Northern Colorado Wind Energy Center (GE) Facility Northern Colorado Wind Energy Center (GE) Sector Wind energy Facility Type Commercial Scale...

  5. Safety Net (SN) CRAC (rates/adjustments)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Oregon. To participate by telephone, please call Cynthia Jones (503) 230-5459 or Cain Bloomer (503-230-7443) in advance of the workshop. August 28, 2003 - Final FB and SN...

  6. GE Wind Energy | Open Energy Information

    Open Energy Info (EERE)

    Energy Jump to: navigation, search Name: GE Wind Energy Place: Atlanta, Georgia Zip: GA 30339 Sector: Wind energy Product: GE's wind energy division, formed as a result of the...

  7. What Is MEMS? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials, Surfaces and Interfaces 2-2-6-v GE Scientists Demonstrate Promising Anti-icing Nano Surfaces 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN ...

  8. Waste to Energy Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    You Might Also Like 2-2-7-v GE Scientists Unveil Greener, Smarter Sleigh for Santa Claus 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN lightning bolt We One-Upped Ben ...

  9. GE Shenhua JV | Open Energy Information

    Open Energy Info (EERE)

    Name: GE & Shenhua JV Place: China Product: China based industrial coal gasification joint venture. References: GE & Shenhua JV1 This article is a stub. You can help OpenEI...

  10. Advances in Nb3Sn Performance

    SciTech Connect (OSTI)

    Godeke, Arno

    2008-05-19

    Nb{sub 3}Sn wires with non-Cu critical current densities (J{sub c}) that surpass 3 kAmm{sup -2} at 12 T and 4.2 K are commercially available in piece lengths longer than 10 km. Accelerator-type magnets that utilize these conductors have achieved record magnetic fields. This article summarizes key developments in the last decade that have led to these significant improvements in the performance of Nb{sub 3}Sn wires.

  11. Disclosures, Disclaimers and Policies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Disclosures, Disclaimers and Policies Home > Disclosures, Disclaimers and Policies Financial Disclosures GE Global Research financial disclosures and conflicts related to PHS-funded research Equal Employment Opportunity Plans Persons wishing to review GE Global Reasearch's EEOP should contact the GEGR Recruiting Manager: Megan Magee, GRC Recruiting Leader, 518-387-6703, magee@ge.com. From GE Global Research https://twitter.com/GEResearch

  12. GE Scientist Stephan Biller Discusses the Industrial Internet | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Manufacturing Scientist Stephan Biller Discusses the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Manufacturing Scientist Stephan Biller Discusses the Industrial Internet Stephan Biller, Chief Manufacturing Scientist at GE Global Research, talked with the Farstuff Podcast about the

  13. SPEIR: A Ge Compton Camera

    SciTech Connect (OSTI)

    Mihailescu, L; Vetter, K M; Burks, M T; Hull, E L; Craig, W W

    2004-02-11

    The SPEctroscopic Imager for {gamma}-Rays (SPEIR) is a new concept of a compact {gamma}-ray imaging system of high efficiency and spectroscopic resolution with a 4-{pi} field-of-view. The system behind this concept employs double-sided segmented planar Ge detectors accompanied by the use of list-mode photon reconstruction methods to create a sensitive, compact Compton scatter camera.

  14. GE PowerPoint Template

    U.S. Energy Information Administration (EIA) Indexed Site

    Power of Networks in an Age of Gas Peter Evans, PhD Director Global Strategy & Analytics General Electric 2013 EIA Energy Conference June 17-18, 2013 Washington, DC 2 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Sources of competitive advantage Thomas Edison - GE Founder Natural endowments Creative endowments The U.S. is rich in both 3 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Physical and digital infrastructure Advantage of

  15. Ferromagnetism of Fe3Sn and alloys

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sales, Brian C.; Saparov, Bayrammurad; McGuire, Michael A.; Singh, David J.; Parker, David S.

    2014-11-12

    Hexagonal Fe3Sn has many of the desirable properties for a new permanent magnet phase with a Curie temperature of 725 K, a saturation moment of 1.18 MA/m. and anisotropy energy, K1 of 1.8 MJ/m3. However, contrary to earlier experimental reports, we found both experimentally and theoretically that the easy magnetic axis lies in the hexagonal plane, which is undesirable for a permanent magnet material. One possibility for changing the easy axis direction is through alloying. We used first principles calculations to investigate the effect of elemental substitutions. The calculations showed that substitution on the Sn site has the potential tomore » switch the easy axis direction. Transition metal substitutions with Co or Mn do not have this effect. We attempted synthesis of a number of these alloys and found results in accord with the theoretical predictions for those that were formed. However, the alloys that could be readily made all showed an in-plane easy axis. The electronic structure of Fe3Sn is reported, as are some are magnetic and structural properties for the Fe3Sn2, and Fe5Sn3 compounds, which could be prepared as mm-sized single crystals.« less

  16. Thermal conductivity of bulk and nanowire Mg₂SixSn1–x alloys from first principles

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Wu; Lindsay, L.; Broido, D. A.; Stewart, Derek A.; Mingo, Natalio

    2012-11-29

    The lattice thermal conductivity (κ) of the thermoelectric materials, Mg₂Si, Mg₂Sn, and their alloys, are calculated for bulk and nanowires, without adjustable parameters. We find good agreement with bulk experimental results. For large nanowire diameters, size effects are stronger for the alloy than for the pure compounds. For example, in 200 nm diameter nanowires κ is lower than its bulk value by 30%, 20%, and 20% for Mg₂Si₀.₆Sn₀.₄, Mg₂Si, and Mg₂Sn, respectively. For nanowires less than 20 nm thick, the relative decrease surpasses 50%, and it becomes larger in the pure compounds than in the alloy. At room temperature, κmore » of Mg₂SixSn1–x is less sensitive to nanostructuring size effects than SixGe1–x, but more sensitive than PbTexSe1–x. This suggests that further improvement of Mg₂SixSn1–x as a nontoxic thermoelectric may be possible.« less

  17. GE's BBQ Science Experiments Produce Results |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    BBQ Science Experiments Reveal Winning Rack of Ribs Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) BBQ Science Experiments Reveal Winning Rack of Ribs Lynn DeRose 2015.03.16 This is the fourth in a five-part series of dispatches from GE's Science of Barbecue Experience at South by Southwest. Our state-of-the-art

  18. SN 2006bt: A PERPLEXING, TROUBLESOME, AND POSSIBLY MISLEADING...

    Office of Scientific and Technical Information (OSTI)

    We present optical light curves and spectra of SN 2006bt which demonstrate the peculiar nature of this object. SN 2006bt has broad, slowly declining light curves indicative of a ...

  19. Shell model calculation for Te and Sn isotopes in the vicinity of {sup 100}Sn

    SciTech Connect (OSTI)

    Yakhelef, A.; Bouldjedri, A.

    2012-06-27

    New Shell Model calculations for even-even isotopes {sup 104-108}Sn and {sup 106,108}Te, in the vicinity of {sup 100}Sn have been performed. The calculations have been carried out using the windows version of NuShell-MSU. The two body matrix elements TBMEs of the effective interaction between valence nucleons are obtained from the renormalized two body effective interaction based on G-matrix derived from the CD-bonn nucleon-nucleon potential. The single particle energies of the proton and neutron valence spaces orbitals are defined from the available spectra of lightest odd isotopes of Sb and Sn respectively.

  20. Aluminum-stabilized NB3SN superconductor

    DOE Patents [OSTI]

    Scanlan, Ronald M.

    1988-01-01

    An aluminum-stabilized Nb.sub.3 Sn superconductor and process for producing same, utilizing ultrapure aluminum. Ductile components are co-drawn with aluminum to produce a conductor suitable for winding magnets. After winding, the conductor is heated to convert it to the brittle Nb.sub.3 Sn superconductor phase, using a temperature high enough to perform the transformation but still below the melting point of the aluminum. This results in reaction of substantially all of the niobium, while providing stabilization and react-in-place features which are beneficial in the fabrication of magnets utilizing superconducting materials.

  1. Crystal growth and annealing study of fragile, non-bulk superconductivity in YFe2Ge 2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kim, H.; Ran, S.; Mun, E. D.; Hodovanets, H.; Tanatar, M. A.; Prozorov, R.; Bud’ko, S. L.; Canfield, P. C.

    2015-02-05

    In this study, we investigated the occurrence and nature of superconductivity in single crystals of YFe2Ge2 grown out of Sn flux by employing X-ray diffraction, electrical resistivity and specific heat measurements. We found that the residual resistivity ratio (RRR) of single crystals can be greatly improved, reaching as high as ~60, by decanting the crystals from the molten Sn at ~350°C and/or by annealing at temperatures between 550°C and 600°C. We found that the samples with RRR ≳ 34 showed resistive signatures of superconductivity with the onset of the superconducting transition Tc ≈ 1.4K. RRR values vary between 35 andmore » 65 with, on average, no systematic change in value Tc, indicating that the systematic changes in RRR do not lead to comparable changes in Tc. Specific heat measurements on samples that showed the clear resistive signatures of a superconducting transition did not show any signature of a superconducting phase transition, which suggests that the superconductivity observed in this compound is either some sort of filamentary, strain-stabilized superconductivity associated with small amounts of stressed YFe2Ge2 (perhaps at twin boundaries or dislocations) or is a second crystallographic phase that is present at level below detection capability of conventional powder X-ray techniques.« less

  2. MEMS Relays | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The Next Revolution in MEMS Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The Next Revolution in MEMS Microelectromechanical systems (MEMS) engineers share what GE Global Research is doing to revolutionize MEMS technology. You Might Also Like 2-1-8-v-mems-applications Engineer Chris Keimel Introduces MEMS Technology

  3. GE Announces Vic Abate as New Chief Technology Officer | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and create next." Abate will become only the 10th leader in GE Global Research's 115-year history. As Chief Technology Officer, Abate will oversee GE's nine global research center...

  4. GE Global Research in Tirat Carmel, Israel

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Tirat Carmel, Israel Tirat Carmel, Israel The Israel Technology Center creates partnerships between Israeli external innovators and GE to bring innovative technologies to the ...

  5. Ultrasound Open Innovation | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to help accelerate the development of new applications to improve the quality of care. Michael Idelchik, vice president of Advanced Technology Programs at GE Global...

  6. User Experience Testing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    understandable, and actionable software experiences for GE customers, partners ... The fact that this work takes place within the Software CoE means that designers and ...

  7. GE Global Research in Shanghai, China

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shanghai, China Shanghai, China GE's commercial and industrial history meets challenges posed by China's rapid growth to produce work reflecting the advancing world. Click to email ...

  8. 3D Printed Toy | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DirectWriteV Building More Intelligent GE Products with Additive Manufacturing DirectWriteV Innovating Around the Clock to Change the Paradigm of Manufacturing ...

  9. New Medical Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    boundaries. Home > Innovation > Healthcare GE Unveils High-Tech Superhero, GENIUS MAN Created on earth to inspire the next generation of scientists and engineers, a team of...

  10. Underground CO2 Storage | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    William Challener, principal investigator and physicist in the Photonics Lab at GE Global Research. "The work is very challenging. We have already developed a single sensor system ...

  11. Blue Arc Machining | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Small Device, Broad Impact in Power Electronics IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe...

  12. Intelligent Rail Networks | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe ...

  13. Industrial Inspection Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Exhibition Focuses on Materials, Surfaces and Interfaces IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe...

  14. Internal Combustion Efficiency | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe...

  15. Cool and Quiet DCJ | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The technology was originally developed for commercial jet engines but has been adapted ... to the Real World in 10 Years primusenginefeaturedimage3 GE Innovation and ...

  16. Big Data Analysis | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Software We're blending data, analytics and computing know-how into algorithms and programs that drive business and technology forward. Home > Innovation > Software GE Software's ...

  17. Stump the Scientist | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    > Stump the Scientist Behind the Scenes with Chief Scientist Jim Bray Watch the Video Happy Pi Day from GE Global Research Watch the Video Ready to Stump the...

  18. Colon Cancer Mapping | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Vanderbilt University has partnered with GE Global Research, the technology development arm for the General Electric Company (NYSE: GE), to better

  19. Crowdsourcing Software Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, MIT Build Crowdsourcing Software Platform Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), is embarking on a program "vehicleforge.mil" to

  20. Modeling of GE Appliances: Final Presentation

    SciTech Connect (OSTI)

    Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

    2013-01-31

    This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

  1. Passionate Technologists Wanted at ASME Turbo Expo|GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    who want to learn more about GE and its global Research Centers. For this purpose, the Aero & Thermal Systems groups of GE Global Research and representatives from several GE...

  2. Top of the World (GE) | Open Energy Information

    Open Energy Info (EERE)

    GE) Jump to: navigation, search Name Top of the World (GE) Facility Top of the World (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner...

  3. Xergy Ships First Breakthrough Water Heater Compressor to GE...

    Energy Savers [EERE]

    Xergy Ships First Breakthrough Water Heater Compressor to GE Xergy Ships First Breakthrough Water Heater Compressor to GE September 15, 2015 - 3:41pm Addthis Xergy Inc. and GE...

  4. Cedar Creek Wind Farm II (GE) | Open Energy Information

    Open Energy Info (EERE)

    GE) Jump to: navigation, search Name Cedar Creek Wind Farm II (GE) Facility Cedar Creek II (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service...

  5. Structural evolution of Ge-rich Si{sub 1-x}Ge{sub x} films deposited...

    Office of Scientific and Technical Information (OSTI)

    clusters percolate together and Si diffuses and redistributes to form a GeSiGe coreshell structure, and some Ge atoms partially diffuse to the surface as a result of segregation. ...

  6. GE Software Expert Julian Keith Loren Discusses Innovation and...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet ... GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet ...

  7. GE Hybrid Power Generation Systems | Open Energy Information

    Open Energy Info (EERE)

    Name: GE Hybrid Power Generation Systems Place: Georgia Zip: Atlanta Product: Focused on fuel cell stack and system development. References: GE Hybrid Power Generation Systems1...

  8. GE Global Research Sourcing External Document & Process Repository...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Global Research Sourcing External Document & Process Repository Home > GE Global Research Sourcing External Document & Process Repository Supplier Integrity Guide Purchase Order...

  9. GE Showcases Industrial Internet Innovations and Promotes Win...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE China Technology Center teams up with Zhangjiang High-tech Management Committee to ... SHANGHAI, Oct. 21 -- The GE China Technology Center presented the newest industrial trends ...

  10. Testimonials - Partnerships in Fuel Cells - GE Global Research...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Fuel Cells - GE Global Research Testimonials - Partnerships in Fuel Cells - GE Global Research Addthis Text Version The words "Office of Energy Efficiency & Renewable Energy, U.S. ...

  11. Butterfly-Inspired Thermal Imaging | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Radislav Potyrailo, principal scientist at GE Global Research who leads GE's bio-inspired photonics programs. "This new class of thermal imaging sensors promises significant ...

  12. GE to provide data, analytics to Brazilian Canoe Confederation...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE to sponsor Brazilian Canoe Confederation Innovative partnership will pair GE software scientists with athletes to explore how big data can help them optimize their performance ...

  13. Computational discovery of ferromagnetic semiconducting single-layer CrSnTe3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhuang, Houlong L.; Xie, Yu; Kent, P. R. C.; Ganesh, P.

    2015-07-06

    Despite many single-layer materials being reported in the past decade, few of them exhibit magnetism. Here we perform first-principles calculations using accurate hybrid density functional methods (HSE06) to predict that single-layer CrSnTe3 (CST) is a ferromagnetic semiconductor, with band gaps of 0.9 and 1.2 eV for the majority and minority spin channels, respectively. We determine the Curie temperature as 170 K, significantly higher than that of single-layer CrSiTe3 (90K) and CrGeTe3 (130 K). This is due to the enhanced ionicity of the Sn-Te bond, which in turn increases the superexchange coupling between the magnetic Cr atoms. We further explore themore » mechanical and dynamical stability and strain response of this single-layer material for possible epitaxial growth. Lastly, our study provides an intuitive approach to understand and design novel single-layer magnetic semiconductors for a wide range of spintronics and energy applications.« less

  14. VERY LATE PHOTOMETRY OF SN 2011fe

    SciTech Connect (OSTI)

    Kerzendorf, W. E. [Department of Astronomy and Astrophysics, University of Toronto, 50 Saint George Street, Toronto, ON M5S 3H4 (Canada); Taubenberger, S.; Seitenzahl, I. R.; Ruiter, A. J., E-mail: wkerzendorf@gmail.com [Max-Planck-Institut fr Astrophysik, Karl-Schwarzschild-Strae 1, D-85748 Garching (Germany)

    2014-12-01

    The Type Ia supernova SN 2011fe is one of the closest supernovae of the past decades. Due to its proximity and low dust extinction, this object provides a very rare opportunity to study the extremely late time evolution (>900 days) of thermonuclear supernovae. In this Letter, we present our photometric data of SN 2011fe taken at an unprecedented late epoch of ?930 days with GMOS-N mounted on the Gemini North telescope (g=23.43 0.28, r=24.14 0.14, i=23.91 0.18, and z=23.90 0.17) to study the energy production and retention in the ejecta of SN 2011fe. Together with previous measurements by other groups, our result suggests that the optical supernova light curve can still be explained by the full thermalization of the decay positrons of {sup 56}Co. This is in spite of theoretical predicted effects (e.g., infrared catastrophe, positron escape, and dust) that advocate a substantial energy redistribution and/or loss via various processes that result in a more rapid dimming at these very late epochs.

  15. Pi in Statistics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Spying on GE Statisticians Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The sPI CAM: Spying on GE Statisticians Andrew Barnes, an applied mathematician at GE Global Research, leads the sPI CAM around the center to see how researchers use Pi in their work. You Might Also Like Geothermal_V Newest APS Fellow Driving

  16. GE Global Research in Niskayuna, NY

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Niskayuna, USA Niskayuna, USA GE Global Research headquarters is the nerve center for innovative work across technologies and collaboration across GE businesses. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Working at GE Global Research Headquarters Visit the Careers page to search and apply for Global Research jobs

  17. About Additive Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Introducing Additive Manufacturing at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Introducing Additive Manufacturing at GE Global Research Prabhjot Singh, manager of the Additive Manufacturing Lab at GE Global Research, describes the technology used in his lab. You Might Also Like DirectWrite_V

  18. Making Industrial Parts Smarter | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Building More Intelligent GE Products with Additive Manufacturing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Building More Intelligent GE Products with Additive Manufacturing James Y. Yang 2014.04.03 GE is using 3D printing and other additive technologies to design and produce parts never before possible. We're

  19. New Energy Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the innovative ecoROTR wind turbine in a drone GE spent a week flying state-of-the-art drones over and around some of our biggest machines, including the ecoROTR experimental......

  20. Researching NDE, Additive Manufacturing |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for GE Intern Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn ...

  1. Remembering Zach Stum | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Remembering Zach Stum Ron Olson 2014.02.25 "To live in hearts we leave behind is not to die." Thomas Campbell, Physicist Zach-Stum On Sunday, February 9, GE Global Research lost a ...

  2. GE Global Research Europe in Munich, Germany

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Munich, Germany Munich, Germany With a hand in nearly all GE research fields, this center is a hub of commercial and industrial science and technology innovation. Click to email ...

  3. Smarter Sleigh Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... and Manufacturing in Europe 2-2-6-v GE Scientists Demonstrate Promising Anti-icing Nano Surfaces 1-2-38-v-software-reliability-engineering A Stochastic Process-Based ...

  4. Oil & Gas Technology Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Global Research Oil & Gas Technology Center Click to email this to a friend (Opens in new ... GE Global Research Oil & Gas Technology Center Mark Little, SVP and chief technology ...

  5. Advanced Composite Materials | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The fan blade is a work of art, with each stripe of composite material laid by hand to ... GE Innovation and Manufacturing in Europe 3-1-9-v-industrial-inspec...

  6. Game Changing Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Real World in 10 Years primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe a79-v-open-innovation We're Open to Collaboration with Companies Big and Small...

  7. Working in the Cleanroom | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    You Might Also Like 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN IMG0475 Innovation 247: We're Always Open MunichinteriorV 10 Years ON: From the Lab to the...

  8. Kids at Work | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    High-Tech Superhero, GENIUS MAN direct write2square The GE Store for Technology is Open for Business IMG0475 Innovation 247: We're Always Open MunichinteriorV 10...

  9. High Performance Computing for Manufacturing Parternship | GE...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, US DOE Partner on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency Click to email this to a friend (Opens in new window) Share on ...

  10. GE Appliances: Order (2010-CE-2113)

    Broader source: Energy.gov [DOE]

    DOE issued an Order after entering into a Compromise Agreement with General Electric Appliances after finding GE Appliances had failed to certify that certain models of dehumidifiers comply with the applicable energy conservation standards.

  11. Advanced Water Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Water We're developing ways to purify and conserve this vital resource. Take a look at our work. Home > Innovation > Water Innovation 247: We're Always Open At GE Global Research, ...

  12. Access to Clean Water | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Clean Water Innovations Click to email this to a friend (Opens in new window) Share on ... What Works: Mark Little on Clean Water Innovations Mark Little, director of GE Global ...

  13. Electrochemical synthesis of Nb3Sn coatings on Cu substrates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Franz, S.; Barzi, E.; Turrioni, D.; Glionna, L.; Bestetti, M.

    2015-09-11

    This study aims at contributing to the development of superconducting Nb3Sn thin films for possible applications, as for instance in superconducting radio frequency (SRF) cavities. The synthesis of Nb-Sn coatings was carried out on copper substrates by electrodeposition from 1-Butyl-3-methylimidazolium chloride (BMIC) ionic liquids containing SnCl2 and NbCl5. Cyclic voltammetric curves were recorded to identify the reduction potentials of Nb and Sn ionic species. Electrodeposition was performed at 40 and 400 mA/cm2 and 130°C. The CV demonstrated that BMIC has a suitable potential window for co-deposition of Nb and Sn. The electrodeposited coatings showed a cubic Nb3Sn phase with (211)more » preferred orientation, a disordered orthorhombic NbSn2 phase and Sn-Cu phases. Film thickness was from 200 to 750 nm. These results suggest that electrodeposition of Nb-Sn coatings on copper substrates could be a suitable route to one day replace the current expensive Nb SRF cavities.« less

  14. Process for the manufacture of 117Sn diethylenetriaminepentaacetic acids

    DOE Patents [OSTI]

    Srivastava, Suresh C.; Li, Zizhong; Meinken, George

    2003-01-01

    Novel methods are provided for the manufacture of .sup.117m Sn(Sn.sup.4+) DTPA. The method allows the use of DTPA, a toxic chelating agent, in an approximately 1:1 ratio to .sup.117m Sn(Sn.sup.4+) via either aqueous conditions, or using various organic solvents, such as methylene chloride. A pharmaceutical composition manufactured by the novel method is also provided, as well as methods for treatment of bone tumors and pain associated with bone cancer using the pharmaceutical composition of the invention.

  15. Advanced Lighting Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Appliances & Lighting We're developing cutting-edge appliances and innovative lighting to make life easier, reduce costs and increase energy efficiency. Home > Innovation > Appliances & Lighting Rio 2016 Olympic Games' technologies You cannot imagine how far GE reaches into the Rio 2016 Olympic Games. The technologies (visible and invisible) that will light,... Read More » A Quirky Idea: Turning Patents Into Consumer Products In April 2013, GE and Quirky announced a partnership

  16. Robotic Wind Turbine Inspection | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Advances Wind Turbine Inspection Through Robotic Trials Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Advances Wind Turbine Inspection Through Robotic Trials GE Global Research is advancing technology that will make the inspection of wind turbines faster and more reliable for customers. Currently, an inspector

  17. New Transportation Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transportation We're working with railroads and heavy industries to create hybrid systems, batteries and first-in-class transportation solutions. Home > Innovation > Transportation Silicon Carbide Applications: Small Device, Broad Impact in Power Electronics It's not every day that the engineers at GE Global Research get their hands on a material that's literally revolutionizing an... Read More » Data Science Makes Trains More Efficient In this Special Report, GE's Creator-in-Residence,

  18. Crowdsourcing Software Award | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Crowdsourcing Software Platform Wins Award Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Crowdsourcing Software Platform Wins Award GE Global Research, the technology development arm of the General Electric Company (NYSE: GE) today announced that it has won a prestigious Manufacturing Leadership 100 award in

  19. Breaking Ground for GE Oil & Gas Tech Center|GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Announces New Technology Partnership with Devon Energy at Global Research Oil & Gas ... GE Announces New Technology Partnership with Devon Energy at Global Research Oil & Gas ...

  20. Immelt: GE Stands at Intersection of Physical, Digital | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Immelt: GE stands at the intersection of the physical, digital Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Immelt: GE stands at the intersection of the physical, digital GE's 2015 Annual Meeting of Shareowners was held Wednesday, April 22, in Oklahoma City, the location of GE's newest Global Research facility.

  1. Yb{sub 5}Ni{sub 4}Sn{sub 10} and Yb{sub 7}Ni{sub 4}Sn{sub 13}: New polar intermetallics with 3D framework structures

    SciTech Connect (OSTI)

    Lei Xiaowu; Sun Zhongming; Li Longhua; Zhong Guohua; Hu Chunli; Mao Jianggao

    2010-04-15

    The title compounds have been obtained by solid state reactions of the corresponding pure elements at high temperature, and structurally characterized by single-crystal X-ray diffraction studies. Yb{sub 5}Ni{sub 4}Sn{sub 10} adopts the Sc{sub 5}Co{sub 4}Si{sub 10} structure type and crystallizes in the tetragonal space group P4/mbm (No. 127) with cell parameters of a=13.785(4) A, c=4.492 (2) A, V=853.7(5) A{sup 3}, and Z=2. Yb{sub 7}Ni{sub 4}Sn{sub 13} is isostructural with Yb{sub 7}Co{sub 4}InGe{sub 12} and crystallizes in the tetragonal space group P4/m (No. 83) with cell parameters of a=11.1429(6) A, c=4.5318(4) A, V=562.69(7) A{sup 3}, and Z=1. Both structures feature three-dimensional (3D) frameworks based on three different types of one-dimensional (1D) channels, which are occupied by the Yb atoms. Electronic structure calculations based on density functional theory (DFT) indicate that both compounds are metallic. These results are in agreement with those from temperature-dependent resistivity and magnetic susceptibility measurements. - Graphical abstract: Two new ytterbium nickel stannides, namely, Yb{sub 5}Ni{sub 4}Sn{sub 10} and Yb{sub 7}Ni{sub 4}Sn{sub 13}, have been synthesized and structurally characterized by single-crystal X-ray diffraction studies. Both their structures feature three-dimensional (3D) frameworks based on three different types of one-dimensional (1D) channels, which are situated by all the Yb atoms. Electronic structure calculations based on density functional theory (DFT) indicate that both compounds are metallic, which are in accordance with the results from temperature-dependent resistivity and magnetic susceptibility measurements.

  2. Reflow of AuSnSolder Creates Strong Joints [Local Reflow of AuSn Solder: Relating Strength to Microstructure

    SciTech Connect (OSTI)

    Golosker, Ilya V.; Florando, Jeff N.

    2013-02-01

    Local heating of AuSn solder creates reliable bonds. However, small changes in the heat schedule result in significant changes to bond strength and microstructure.

  3. Thermal conductivity of bulk and nanowire Mg₂SixSn1–x alloys from first principles

    SciTech Connect (OSTI)

    Li, Wu; Lindsay, L.; Broido, D. A.; Stewart, Derek A.; Mingo, Natalio

    2012-11-29

    The lattice thermal conductivity (κ) of the thermoelectric materials, Mg₂Si, Mg₂Sn, and their alloys, are calculated for bulk and nanowires, without adjustable parameters. We find good agreement with bulk experimental results. For large nanowire diameters, size effects are stronger for the alloy than for the pure compounds. For example, in 200 nm diameter nanowires κ is lower than its bulk value by 30%, 20%, and 20% for Mg₂Si₀.₆Sn₀.₄, Mg₂Si, and Mg₂Sn, respectively. For nanowires less than 20 nm thick, the relative decrease surpasses 50%, and it becomes larger in the pure compounds than in the alloy. At room temperature, κ of Mg₂SixSn1–x is less sensitive to nanostructuring size effects than SixGe1–x, but more sensitive than PbTexSe1–x. This suggests that further improvement of Mg₂SixSn1–x as a nontoxic thermoelectric may be possible.

  4. SN-03 Final Proposal Study and Documentation (ratecases/sn03...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    222 kb 07-09-2003 5. Revenue and Purchased Power Expense Forecast 30 99 kb 07-09-2003 6. Risk Analysis 13 61 kb 07-09-2003 7. SN CRAC Design 31 102 kb 07-09-2003 Documentation...

  5. Thermodynamic understanding of Sn whisker growth on the Cu surface in Cu(top)-Sn(bottom) bilayer system upon room temperature aging

    SciTech Connect (OSTI)

    Huang, Lin; Jian, Wei; Lin, Bing; Wang, Jiangyong; Wen, Yuren; Gu, Lin

    2015-06-07

    Sn whiskers are observed by scanning electron microscope on the Cu surface in Cu(top)-Sn(bottom) bilayer system upon room temperature aging. Only Cu{sub 6}Sn{sub 5} phase appears in the X-ray diffraction patterns and no Sn element is detected in the Cu sublayer by scanning transmission electron microscopy. Based on the interfacial thermodynamics, the intermetallic Cu{sub 6}Sn{sub 5} compound phase may form directly at the Sn grain boundary. Driven by the stress gradient during the formation of Cu{sub 6}Sn{sub 5} compound at Sn grain boundaries, Sn atoms segregate onto the Cu surface and accumulate to form Sn whisker.

  6. High spin polarization in CoFeMnGe equiatomic quaternary Heusler alloy

    SciTech Connect (OSTI)

    Bainsla, Lakhan; Suresh, K. G.; Nigam, A. K.; Manivel Raja, M.; Varaprasad, B. S. D. Ch. S.; Takahashi, Y. K.; Hono, K.

    2014-11-28

    We report the structure, magnetic property, and spin polarization of CoFeMnGe equiatomic quaternary Heusler alloy. The alloy was found to crystallize in the cubic Heusler structure (prototype LiMgPdSn) with considerable amount of DO{sub 3} disorder. Thermal analysis result indicated the Curie temperature is about 750 K without any other phase transformation up to melting temperature. The magnetization value was close to that predicted by the Slater-Pauling curve. Current spin polarization of P = 0.70 ± 0.01 was deduced using point contact andreev reflection measurements. The temperature dependence of electrical resistivity has been fitted in the temperature range of 5–300 K in order to check for the half metallic behavior. Considering the high spin polarization and Curie temperature, this material appears to be promising for spintronic applications.

  7. Field quality study in Nb(3)Sn accelerator magnets

    SciTech Connect (OSTI)

    Kashikhin, V.V.; Ambrosio, G.; Andreev, N.; Barzi, E.; Bossert, R.; DiMarco, J.; Kashikhin, V.S.; Lamm, M.; Novitski, I.; Schlabach, P.; Velev, G.; Yamada, R.; Zlobin, A.V.; /Fermilab

    2005-05-01

    Four nearly identical Nb{sub 3}Sn dipole models of the same design were built and tested at Fermilab. It provided a unique opportunity of systematic study the field quality effects in Nb{sub 3}Sn accelerator magnets. The results of these studies are reported in the paper.

  8. Communication: Nanosize-induced restructuring of Sn nanoparticles

    SciTech Connect (OSTI)

    Sabet, Sareh; Kaghazchi, Payam

    2014-05-21

    Stabilities and structures of β- and α-Sn nanoparticles are studied using density functional theory. Results show that β-Sn nanoparticles are more stable. For both phases of Sn, nanoparticles smaller than 1 nm (∼48 atoms) are amorphous and have a band gap between 0.4 and 0.7 eV. The formation of band gap is found to be due to amorphization. By increasing the size of Sn nanoparticles (1–2.4 nm), the degree of crystallization increases and the band gap decreases. In these cases, structures of the core of nanoparticles are bulk-like, but structures of surfaces on the faces undergo reconstruction. This study suggests a strong size dependence of electronic and atomic structures for Sn nanoparticle anodes in Li-ion batteries.

  9. DISPLAYING THE HETEROGENEITY OF THE SN 2002cx-LIKE SUBCLASS OF TYPE Ia SUPERNOVAE WITH OBSERVATIONS OF THE Pan-STARRS-1 DISCOVERED SN 2009ku

    SciTech Connect (OSTI)

    Narayan, G.; Foley, R. J.; Berger, E.; Chornock, R.; Rest, A.; Soderberg, A. M.; Kirshner, R. P.; Botticella, M. T.; Smartt, S.; Valenti, S.; Huber, M. E.; Scolnic, D.; Grav, T.; Burgett, W. S.; Chambers, K. C.; Flewelling, H. A.; Gates, G.; Kaiser, N.; Magnier, E. A.; Morgan, J. S. E-mail: rfoley@cfa.harvard.edu

    2011-04-10

    SN 2009ku, discovered by Pan-STARRS-1, is a Type Ia supernova (SN Ia), and a member of the distinct SN 2002cx-like class of SNe Ia. Its light curves are similar to the prototypical SN 2002cx, but are slightly broader and have a later rise to maximum in g. SN 2009ku is brighter ({approx}0.6 mag) than other SN 2002cx-like objects, peaking at M{sub V} = -18.4 mag, which is still significantly fainter than typical SNe Ia. SN 2009ku, which had an ejecta velocity of {approx}2000 km s{sup -1} at 18 days after maximum brightness, is spectroscopically most similar to SN 2008ha, which also had extremely low-velocity ejecta. However, SN 2008ha had an exceedingly low luminosity, peaking at M{sub V} = -14.2 mag, {approx}4 mag fainter than SN 2009ku. The contrast of high luminosity and low ejecta velocity for SN 2009ku is contrary to an emerging trend seen for the SN 2002cx class. SN 2009ku is a counterexample of a previously held belief that the class was more homogeneous than typical SNe Ia, indicating that the class has a diverse progenitor population and/or complicated explosion physics. As the first example of a member of this class of objects from the new generation of transient surveys, SN 2009ku is an indication of the potential for these surveys to find rare and interesting objects.

  10. Kondo-lattice behavior and multiple characteristic temperatures in CeIr{sub 2}Ge{sub 2}

    SciTech Connect (OSTI)

    Mallik, R.; Sampathkumaran, E.V.; Paulose, P.L.; Dumschat, J.; Wortmann, G.

    1997-02-01

    The results of electrical-resistivity {rho} measurements (1.4{endash}300 K) on the alloys, Ce{sub 1{minus}x}La{sub x}Ir{sub 2}Ge{sub 2} (0{le}x{le}1), CeIr{sub 2{minus}x}(Rh,Pt){sub x}Ge{sub 2} (x=0.2 and 0.4), and CeIr{sub 2}Ge{sub 2{minus}x}(Si,Sn){sub x} (x=0.2 and 0.4), are reported in order to understand the Kondo effect in CeIr{sub 2}Ge{sub 2}. There is a significant decrease in {rho} as the temperature is lowered from 100 to 4.2 K for x = 0.0. This feature disappears for a small replacement of Ce by La (x = 0.3), thereby resulting in a single-ion Kondo effect for higher values of x. This finding establishes that the temperature T{sub coh}, characterizing the coherent scattering among the Kondo centers for x=0 is as large as about 100 K. The coherent scattering is not destroyed by small substitutions at the Ir or Ge site. The observed sensitivity of this coherence effect to a small disruption of Ce sublattice periodicity alone by La substitution is uncommon among trivalent Ce alloys. Such a large T{sub coh} value enables us to emphasize the need to invoke three characteristic temperatures for nonmagnetic Kondo lattices. {copyright} {ital 1997} {ital The American Physical Society}

  11. GE's Christine Furstoss Named to NACIE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    U.S. Secretary of Commerce Penny Pritzker Announces GE's Christine Furstoss to Serve on the National Advisory Council on Innovation and Entrepreneurship Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) U.S. Secretary of Commerce Penny Pritzker Announces GE's Christine Furstoss to Serve on the National Advisory Council on

  12. Brazil Technology Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Biofuels Research at GE's Brazil Technology Center Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Biofuels Research at GE's Brazil Technology Center Clayton Zabeu, leader of Brazil Technology Center's Biofuels Center of Excellence, talks about the main objectives of the research programs that will drive the development

  13. Artificial Lift Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technology: Driving the Artificial Lift Market Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Technology: Driving the Artificial Lift Market Gary Ford, president and CEO of GE Artificial Lift, discusses what the equipment does, the current state of the market and the importance of working with GE's Global Research

  14. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sundeep Kumar Sundeep Kumar Senior Scientist Ceramics Synthesis & Processing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "I leverage the experience and network I have built over the years working with some of the finest minds at GE to help me solve tough technical problems for GE." -Sundeep Kumar

  15. Licensing Our Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Teaming Up With Idea Works Puts Our Tech Into the World Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Teaming Up With Idea Works Puts Our Tech Into the World GE Idea Works is extending the reach of our technology by connecting GE's internal intellectual property, technology and resources with the external world. With

  16. GE Announces Vic Abate as New Chief Technology Officer | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Names Vic Abate New Chief Technology Officer; Succeeds Mark Little Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Names Vic Abate New Chief Technology Officer; Succeeds Mark Little Vic Abate, President and CEO of GE's Power Generation business, to succeed Mark Little and continue GE's leadership in the Digital

  17. Science and BBQ: GE makes its mark, and bark, at SXSW | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Science and BBQ: GE makes its mark ... and bark! Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Science and BBQ: GE makes its mark ... and bark! Lynn DeRose 2015.03.20 This is the fifth in a five-part series of dispatches from GE's Science of Barbecue Experience at South by Southwest. Our state-of-the-art Brilliant

  18. GE launches 'STEM empowers OK' initiative in Oklahoma City | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research GE, OCAST and OSSM Partner to Launch "STEM Empowers OK" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, OCAST and OSSM Partner to Launch "STEM Empowers OK" stem empowers ok GE Foundation donates $400,000 to enhance STEM education initiatives across Oklahoma STEM Empowers OK to

  19. Who Is Jim Bray, GE Stump the Scientist? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Who Is Jim Bray, GE Stump the Scientist? Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Who Is Jim Bray, GE Stump the Scientist? 2012.05.30 Chief Scientist Jim Bray introduces himself and talks about his work and time at GE. 0 Comments Comment Name Email Submit Comment

  20. Synthesis and structural characterization of the new clathrates K8Cd4Ge42, Rb8Cd4Ge42, and Cs8Cd4Ge42

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Schafer, Marion; Bobev, Svilen

    2016-03-25

    This paper presents results from our exploratory work in the systems K-Cd-Ge, Rb-Cd-Ge, and Cs-Cd-Ge, which yielded the novel type-I clathrates with refined compositions K8Cd3.77(7)Ge42.23, Rb8Cd3.65(7)Ge42.35, and Cs7.80(1)Cd3.65(6)Ge42.35. The three compounds represent rare examples of clathrates of germanium with the alkali metals, where a d10 element substitutes a group 14 element. The three structures, established by single-crystal X-ray diffraction, indicate that the framework-building Ge atoms are randomly substituted by Cd atoms on only one of the three possible crystallographic sites. Furthermore, this and several other details of the crystal chemistry are elaborated.

  1. Phase transitions in Ge-Sb phase change materials

    SciTech Connect (OSTI)

    Raoux, Simone; Virwani, Kumar; Hitzbleck, Martina; Salinga, Martin; Madan, Anita; Pinto, Teresa L.

    2009-03-15

    Thin films of the phase change material Ge-Sb with Ge concentrations between 7.3 and 81.1 at. % were deposited by cosputtering from elemental targets. Their crystallization behavior was studied using time-resolved x-ray diffraction, Auger electron spectroscopy, differential scanning calorimetry, x-ray reflectivity, profilometry, optical reflectivity, and resistivity versus temperature measurements. It was found that the crystallization temperature increases with Ge content. Calculations of the glass transition temperature (which is a lower limit for the crystallization temperature T{sub x}) also show an increase with Ge concentration closely tracking the measured values of T{sub x}. For low Ge content samples, Sb x-ray diffraction peaks occurred during a heating ramp at lower temperature than Ge diffraction peaks. The appearance of Ge peaks is related to Ge precipitation and agglomeration. For Ge concentrations of 59.3 at. % and higher, Sb and Ge peaks occurred at the same temperature. Upon crystallization, film mass density and optical reflectivity increase as well as electrical contrast (ratio of resistivity in amorphous phase to crystalline phase) all showed a maximum for the eutectic alloy (14.5 at. % Ge). For the alloy with 59.3 at. % Ge there was very little change in any of these parameters, while the alloy with 81.1 at. % Ge behaved opposite to a typical phase change alloy and showed reduced mass density and reflectivity and increased resistivity.

  2. GE Lighting Solutions: Order (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE ordered General Electric Lighting Solutions, LLC to pay a $5,360 civil penalty after finding GE Lighting Solutions had manufactured and distributed in commerce in the U.S. 30 units of basic model DR4-RTFB-23B and 177 units (of which 85 units remain in inventory) of basic model DR4-RTFB-77A-002, noncompliant traffic signal modules.

  3. GE launches 'STEM empowers OK' initiative in Oklahoma City |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Foundation donates 400,000 to enhance STEM education initiatives across Oklahoma STEM Empowers OK to sponsor week-long, GE Summer Science Academy at OSSM for Oklahoma students ...

  4. Nanotextured Anti-Icing Surfaces | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Demonstrate Promising Anti-icing Nano Surfaces Click to email this to a friend (Opens in ... GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today ...

  5. Intern Shares Insight Into Researchers' Minds |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (Opens in new window) The Quality of GE Researchers...and Why That's So Important Daniel Cadel 2014.08.14 GE Global Research asked some of our interns to share why they wanted...

  6. GE Appliances: Order (2012-SE-1403) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    October 3, 2012 DOE ordered GE Appliances, a Division of General Electric Company to pay a 63,000 civil penalty after finding GE had privately labeled and distributed in commerce ...

  7. Secretary Chu Speaks at GE Solar Facility | Department of Energy

    Energy Savers [EERE]

    GE is a leader in energy innovation. Thomas Edison, the father of GE, once said, "I'd put my money on the sun and solar energy. What a source of power" I imagine he would be ...

  8. COLLOQUIUM: Future Electrical Technologies From a GE Viewpoint...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1, 2015, 4:00pm to 5:30pm Colloquia MBG Auditorium COLLOQUIUM: Future Electrical Technologies From a GE Viewpoint Dr. James Bray GE Global Research I will give a brief overview of...

  9. VEA-0016- In the Matter of GE Appliances

    Broader source: Energy.gov [DOE]

    Sub-Zero Freezer Co. (Sub-Zero), GE Appliances (GE), and Whirlpool Corporation (Whirlpool) filed appeals of our November 3, 2000 decision, granting Viking Range Corporation (Viking) a six-month...

  10. Future of 3D Printing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    In 2016, GE will enter a new jet engine into service called the CFM LEAP-the first in GE's line to incorporate 3D-printed parts. Specifically, it will be a combustion component ...

  11. Leptogenesis via the 750 GeV pseudoscalar (Journal Article) ...

    Office of Scientific and Technical Information (OSTI)

    Leptogenesis via the 750 GeV pseudoscalar Citation Details In-Document Search This content will become publicly available on June 6, 2017 Title: Leptogenesis via the 750 GeV ...

  12. GE Store for Technology is Open for Business | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    this way. The GE Store is a place where every business can come for technologies, product development and services that no one else can provide. The work of our researchers ties...

  13. Effects of Sn addition on the microstructure, mechanical properties and corrosion behavior of Ti–Nb–Sn alloys

    SciTech Connect (OSTI)

    Moraes, Paulo E.L.; Contieri, Rodrigo J.; Lopes, Eder S.N.; Robin, Alain; Caram, Rubens

    2014-10-15

    Ti and Ti alloys are widely used in restorative surgery because of their good biocompatibility, enhanced mechanical behavior and high corrosion resistance in physiological media. The corrosion resistance of Ti-based materials is due to the spontaneous formation of the TiO{sub 2} oxide film on their surface, which exhibits elevated stability in biological fluids. Ti–Nb alloys, depending on the composition and the processing routes to which the alloys are subjected, have high mechanical strength combined with low elastic modulus. The addition of Sn to Ti–Nb alloys allows the phase transformations to be controlled, particularly the precipitation of ω phase. The aim of this study is to discuss the microstructure, mechanical properties and corrosion behavior of cast Ti–Nb alloys to which Sn has been added. Samples were centrifugally cast in a copper mold, and the microstructure was characterized using optical microscopy, scanning electron microscopy and X-ray diffractometry. Mechanical behavior evaluation was performed using Berkovich nanoindentation, Vickers hardness and compression tests. The corrosion behavior was evaluated in Ringer's solution at room temperature using electrochemical techniques. The results obtained suggested that the physical, mechanical and chemical behaviors of the Ti–Nb–Sn alloys are directly dependent on the Sn content. - Graphical abstract: Effects of Sn addition to the Ti–30Nb alloy on the elastic modulus. - Highlights: • Sn addition causes reduction of the ω phase precipitation. • Minimum Vickers hardness and elastic modulus occurred for 6 wt.% Sn content. • Addition of 6 wt.% Sn resulted in maximum ductility and minimum compression strength. • All Ti–30Nb–XSn (X = 0, 2, 4, 6, 8 and 10%) alloys are passive in Ringer's solution. • Highest corrosion resistance was observed for 6 wt.% Sn content.

  14. 119Sn-NMR investigations on superconducting Ca3Ir4Sn13: Evidence for multigap superconductivity

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sarkar, R.; Petrovic, C.; Bruckner, F.; Gunther, M.; Wang, Kefeng; Biswas, P. K.; Luetkens, H.; Morenzoni, E.; Amato, A.; Klauss, H. -H.

    2015-09-25

    In this study, we report bulk superconductivity (SC) in Ca3Ir4Sn13 by means of 119Sn nuclear magnetic resonance (NMR) experiments. Two classical signatures of BCS superconductivity in spin-lattice relaxation rate (1/T1), namely the Hebel–Slichter coherence peak just below the Tc, and the exponential decay in the superconducting phase, are evident. The noticeable decrease of 119Sn Knight shift below Tc indicates spin-singlet superconductivity. The temperature dependence of the spin-lattice relaxation rate 119(1/T1) is convincingly described by the multigap isotropic superconducting gap. NMR experiments do not witness any sign of enhanced spin fluctuations.

  15. Ba{sub 6}Ge{sub 25}: low-temperature Ge-Ge bond breaking during temperature-induced structure transformation

    SciTech Connect (OSTI)

    Carrillo-Cabrera, Wilder . E-mail: carrillo@cpfs.mpg.de; Borrmann, Horst; Paschen, Silke; Baenitz, Michael; Steglich, Frank; Grin, Yuri

    2005-03-15

    In order to find the optimal conditions for sample preparation of the binary germanide Ba{sub 6}Ge{sub 25}, the germanium-rich part of the Ba-Ge phase diagram was redetermined by means of metallography, X-ray powder diffraction and differential thermal analysis. The temperature behavior of cubic Ba{sub 6}Ge{sub 25} was investigated both on polycrystalline samples and single crystals. The temperature dependence of the lattice parameter exhibits two anomalies at about 180 and 230K, respectively, which are caused by a structure transformation in two steps with hysteresis. Powder (T=10-295K) and single-crystal (T=95-295K) X-ray diffraction studies confirm that the symmetry of Ba{sub 6}Ge{sub 25} (space group P4{sub 1}32) remains unchanged within the entire temperature range. A reconstructive behavior of the structural transformation is observed, involving Ge-Ge bond breaking and barium cation displacements. Some Ge4 type atoms ({approx}28%) are so significantly displaced during cooling that Ge4-Ge6 bonds break and new three-bonded (3b)Ge{sup -} species (electron acceptors) are formed. Consequently, the number of charge carriers is reduced, affecting the physical properties. The reversible bond breaking involved in this process is a typical characteristic of a solid-state chemical reac0010ti.

  16. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-02-05

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore » dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

  17. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect (OSTI)

    Norris, D. J.; Qiu, Y.; Walther, T.; Dobbie, A.; Myronov, M.

    2014-01-07

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1−x}Ge{sub x} alloys for germanium concentrations x ≤ 0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28 < x ≤ 1 form islands after deposition of ∼3.0/x monolayers (=quarter unit cells in the diamond lattice, ML). The uncertainty in the amount of deposited material for pure Ge is ±(0.2–0.3) ML. Modelling shows that of the amount of germanium deposited, 0.7 ML segregate towards the free surface so that only ∼2.3/x ML are directly incorporated in the layer within a few nanometres, in good agreement with our measurements. For pure Ge (x = 1), this thickness is smaller than most values quoted in the literature, which we attribute to the high sensitivity of our method to fractional monolayer changes in the effective chemical width of such thin layers.

  18. Phase transformation between Cu(In,Sn){sub 2} and Cu{sub 2}(In,Sn) compounds formed on single crystalline Cu substrate during solid state aging

    SciTech Connect (OSTI)

    Tian, Feifei; Liu, Zhi-Quan Guo, Jingdong

    2014-01-28

    Interfacial reactions between eutectic SnIn and single crystalline Cu during solid-state aging at low temperature were investigated systematically. Three types of phase transformations between Cu(In,Sn){sub 2} layer and Cu{sub 2}(In,Sn) layer were observed, which are Cu(In,Sn){sub 2} grows and Cu{sub 2}(In,Sn) consumes at 40?C, Cu(In,Sn){sub 2} and Cu{sub 2}(In,Sn) grow simultaneously at 60?C, as well as Cu(In,Sn){sub 2} consumes and Cu{sub 2}(In,Sn) grows at 80 and 100?C. According to physicochemical approach, the chemical reactions at Cu/Cu{sub 2}(In,Sn)/Cu(In,Sn){sub 2}/SnIn interfaces were discussed in detail. It was concluded that the diffusion ability of Cu and In atoms dominated different phase transformations. When diffusion constants k{sub 1In2}?>?8/3k{sub 1Cu2} Cu(In,Sn){sub 2} will grow, and if k{sub 1Cu2}???k{sub 1In2} Cu{sub 2}(In,Sn) will grow. Both Cu(In,Sn){sub 2} and Cu{sub 2}(In,Sn) can grow in the condition of k{sub 1In2} ? k{sub 1Cu2}. The values of k{sub 1Cu2} and k{sub 1In2} at different temperatures on (100)Cu and (111)Cu substrate were also calculated or estimated by analyzing the growth kinetics of the compound layers.

  19. Ethanol Oxidation on the Ternary PtRhSnO2/C Electrocatalysts with Varied Pt:Rh:Sn ratios

    SciTech Connect (OSTI)

    Adzic, R.R.; Li, M.; Kowal, A.; Sasaki, K.; Marinkovic, N.; Su, D.; Korach, E.; Liu, P.

    2010-05-30

    Ternary Pt-Rh-SnO{sub 2}/C electrocatalysts with the atomic ratio Pt:Rh:Sn = 3:1:x, where x varies from 2 to 6, were synthesized using the modified polyol method followed by thermal treatment. Several techniques used to characterize these electrocatalysts showed they were composed of homogeneous PtRh alloy and SnO{sub 2}, having all three constituents coexisting in single nanoparticles with the average particle size around 1.4 nm and a narrow size distribution. While all the electrocatalysts investigated exhibited high catalytic activity for ethanol oxidation, the most active one had the composition with the Pt:Rh:Sn = 3:1:4 atomic ratio. These ternary-electrocatalysts effectively split the C-C bond in ethanol at room temperature in acidic solutions, which is verified using the in situ IRRAS technique.

  20. 12 GeV Upgrade | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    12 GeV Upgrade Physicists at Jefferson Lab are trying to find answers to some of nature's most perplexing questions about the universe by exploring the nucleus of the atom. Their goal is to answer such questions as: "What is the universe made of?" and "What holds everyday matter together?" In their search for answers, physicists smash electrons into atoms using Jefferson Lab's Continuous Electron Beam Accelerator Facility. CEBAF provides physicists with an unprecedented

  1. Zero Liquid Discharge Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reverse Osmosis (RO) Membrane Technology Purifies Water Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Reverse Osmosis (RO) Membrane Technology Purifies Water GE's Reverse Osmosis (RO) Membrane technology addresses industrial waste water treatment and recycling needs, purifying water for cooling, boilers, and general

  2. membrane-ge | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bench-Scale High-Performance Thin Film Composite Hollow Fiber Membranes for Post-Combustion Carbon Dioxide Capture Project No.: DE-FE0007514 GE Global Research is developing high performance thin film polymer composite hollow fiber membranes and advanced processes for economical post-combustion carbon dioxide (CO2) capture from pulverized coal flue gas at temperatures typical of existing flue gas cleanup processes. The project will optimize the novel membranes at the bench scale, including

  3. Impact of Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    IMPACT The needs of the world inspire us to create technologies to build, connect, cure, move and power the world around us. I Want to See Game-Changing Technology Work & Life Cool Science STEM Education Most Popular Shuffle Information for Me Game-Changing Technology Work & Life Cool Science STEM Education Most Popular Shuffle How Goal Line Technology Can Improve Industry Productivity » Nano Communication Networks Update » A family of GE engineers » Legendary Vision See where our

  4. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inventors GE Global Research Centers are home to many of the world's brightest, most inquisitive minds in science and technology. Home > Invention > Inventors Sort: Random First Name Last Name Filter: All Aero-Thermal & Mechanical Systems Chemistry & Chemical Engineering Diagnostics, Imaging & Biomedical Technologies Electrical Technologies & Systems Manufacturing & Materials Technologies Software Sciences & Analytics Joseph Vinciquerra Senior Engineer & Manager

  5. Prompt Gamma Rays in {sup 77}Ge after Neutron Capture on {sup 76}Ge

    SciTech Connect (OSTI)

    Meierhofer, Georg; Grabmayr, Peter; Jochum, Josef [Physikalisches Institut, Eberhard Karls Universitaet Tuebingen, Auf der Morgenstelle 14, 72076 Tuebingen (Germany); Canella, Lea [Institut fuer Radiochemie, Technische Universitaet Muenchen, Walther-Meissner-Str. 3, 85748 Garching (Germany); Jolie, Jan; Kudejova, Petra; Warr, Nigel [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Cologne (Germany)

    2009-01-28

    The observation of neutrinoless double beta decay would be proof of the Majorana nature of the neutrino. Half-lives for these decays are very long (for {sup 76}Ge:>10{sup 25} y), so background reduction and rejection is the major task for double beta experiments. The GERDA (GERmanium Detector Array) experiment at the Gran Sasso Laboratory of the INFN (LNGS) searches for neutrinoless double beta decay of {sup 76}Ge. The isotope {sup 76}Ge is an ideal candidate because it can be used as source and detector at the same time. A large remaining contribution to the background arises from the prompt gamma cascade after neutron capture by {sup 76}Ge followed by {beta}{sup -}-decay of {sup 77}Ge. Since the prompt gamma decay scheme is poorly known, measurements with isotopically enriched Germanium samples were carried out at the PGAA facility at the research reactor FRM II (Munich). With the known prompt gamma spectrum it will be possible to improve the overall veto efficiency of the GERDA experiment.

  6. Electronic Structure and Optical Properties of Cu2ZnGeSe4. First-Principles Calculations and Vacuum-Ultraviolet Spectroscopic Ellipsometric Studies

    SciTech Connect (OSTI)

    Choi, Sukgeun; Park, Ji-Sang; Donohue, Andrea; Christensen, Steven T.; To, Bobby; Beall, Carolyn; Wei, Su-Huai; Repins, Ingid L.

    2015-11-19

    Cu2ZnGeSe4 is of interest for the development of next-generation thin-film photovoltaic technologies. To understand its electronic structure and related fundamental optical properties, we perform first-principles calculations for three structural variations: kesterite, stannite, and primitive-mixed CuAu phases. The calculated data are compared with the room-temperature dielectric function?=?1+i?2 spectrum of polycrystalline Cu2ZnGeSe4 determined by vacuum-ultraviolet spectroscopic ellipsometry in the photon-energy range of 0.7 to 9.0 eV. Ellipsometric data are modeled with the sum of eight Tauc-Lorentz oscillators, and the best-fit model yields the band-gap and Tauc-gap energies of 1.25 and 1.19 eV, respectively. A comparison of overall peak shapes and relative intensities between experimental spectra and the calculated ? data for three structural variations suggests that the sample may not have a pure (ordered) kesterite phase. We found that the complex refractive index N=n+ik, normal-incidence reflectivity R, and absorption coefficients ? are calculated from the modeled ? spectrum, which are also compared with those of Cu2ZnSnSe4 . The spectral features for Cu2ZnGeSe4 appear to be weaker and broader than those for Cu2ZnSnSe4 , which is possibly due to more structural imperfections presented in Cu2ZnGeSe4 than Cu2ZnSnSe4 .

  7. Synthesis of superconducting Nb3Sn coatings on Nb substrates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Barzi, E.; Franz, S.; Reginato, F.; Turrioni, D.; Bestetti, M.

    2015-12-01

    In the present work the electrochemical and thermal syntheses of superconductive Nb3Sn films are investigated. The Nb3Sn phase is obtained by electrodeposition of Sn layers and Cu intermediate layers onto Nb substrates followed by high temperature diffusion in inert atmosphere. Electrodeposition was performed from aqueous solutions at current densities in the 20 to 50 mA/cm2 range and at temperatures between 40 and 50°C. Subsequent thermal treatments were realized to obtain the Nb3Sn superconductive phase. Glow discharge optical emission spectrometry (GDOES) demonstrated that after thermal treatment interdiffusion of Nb and Sn occurred across a thickness of about 13 μm. Scanning Electronmore » Microscopy (SEM) allowed accurately measuring the thickness of the Nb3Sn phase, whose average for the various types of film samples was between 5.7 and 8.0 μm. X-ray diffraction (XRD) patterns confirmed the presence of a cubic Nb3Sn phase (A15 structure) having (210) preferred orientation. The maximum obtained Tc was 17.68 K and the Bc20 ranged between 22.5 T and 23.8 T. With the procedure described in the present paper, coating complex shapes cost-effectively becomes possible, which is typical of electrochemical techniques. Furthermore, this approach can be implemented in classical wire processes such as "Jelly Roll" or "Rod in Tube", or directly used for producing superconducting surfaces. In conclusion, the potential of this method for Superconducting Radiofrequency (SRF) structures is also outlined.« less

  8. Elimination of GeO(2) And Ge(3)N(4) Interfacial Transition Regions And Defects at N-Type Ge Interfaces: a Pathway for Formation of N-MOS Devices on Ge Substrates

    SciTech Connect (OSTI)

    Lucovsky, G.; Lee, S.; Long, J.P.; Seo, H.; Luning, J.

    2009-05-19

    The contribution from relatively low-K SiON interfacial transition regions (ITRs) between Si and transition metal (TM) gate dielectrics places a significant limitation on equivalent oxide thickness (EOT) scaling for Si complementary metal-oxide-semiconductor (CMOS) devices. This limitation is equally significant and limiting for Ge CMOS devices. Low-K Ge-based ITRs in Ge devices have also been shown to limit performance and reliability, particular for n-MOS field effect transistors. This article identifies the source of significant electron trapping at interfaces between n-Ge or inverted p-Ge, and Ge oxide, nitride and oxynitride ITRs. This is shown to be an interfacial band alignment issue in which native Ge ITRs have conduction band offset energies smaller than those of TM dielectrics, and trap electrons for negative Ge substrate bias. This article also describes a novel remote plasma processing approach for effectively eliminating any significant native Ge ITRs and using a plasma-processing/annealing process sequence for bonding TM gate dielectrics directly to the Ge substrate surface.

  9. GE's Arnie Lund Discusses User Experience at an Industrial Scale | GE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Global Research Arnie Lund Discusses User Experience at an Industrial Scale Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's Arnie Lund Discusses User Experience at an Industrial Scale Arnie Lund, manager of the UX Industrial Innovation Lab at GE Global Research in San Ramon, Calif, recently spoke to the

  10. GE and Maker Faire Are a Match Made in Nerd Heaven | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Maker Faire Are a Match Made in Nerd Heaven Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE and Maker Faire Are a Match Made in Nerd Heaven Peter Tu 2011.06.06 This year GE was a sponsor of the spring version of Maker Faire held out in San Francisco. Our main contributions to the festivities consisted of a

  11. GE funds initiative to support STEM initiatives in Oklahoma | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research STEM Empowers OK: Initiative to enrich STEM education in Oklahoma Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) STEM Empowers OK: Initiative to enrich STEM education in Oklahoma On April 21, 2015, GE announced a grant to the state of Oklahoma to enhance STEM education initiatives. Jeff Immelt, GE's

  12. Superconducting and magnetic properties of Sr?Ir?Sn??

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Biswas, P. K.; Wang, Kefeng; Amato, A.; Khasanov, R.; Luetkens, H.; Petrovic, C.; Cook, R. M.; Lees, M. R.; Morenzoni, E.

    2014-10-10

    Magnetization and muon spin relaxation or rotation (SR) measurements have been performed to study the superconducting and magnetic properties of Sr?Ir?Sn??. From magnetization measurements the lower and upper critical fields of Sr?Ir?Sn?? are found to be 81(1) Oe and 14.4(2) kOe, respectively. Zero-field SR data show no sign of any magnetic ordering or weak magnetism in Sr?Ir?Sn??. Transverse-field SR measurements in the vortex state provided the temperature dependence of the magnetic penetration depth ?. The dependence of ?? with temperature is consistent with the existence of single s-wave energy gap in the superconducting state of Sr?Ir?Sn?? with a gap valuemoreof 0.82(2) meV at absolute zero temperature. The magnetic penetration depth at zero temperature ?(0) is 291(3) nm. The ratio ?(0)/kBTc = 2.1(1) indicates that Sr?Ir?Sn?? should be considered as a strong-coupling superconductor.less

  13. In situ visualization of metallurgical reactions in nanoscale Cu/Sn diffusion couples

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yin, Qiyue; Stach, Eric A.; Gao, Fan; Zhou, Guangwen; Gu, Zhiyong

    2015-02-10

    The Cu–Sn metallurgical soldering reaction in two-segmented Cu–Sn nanowires is visualized by in-situ transmission electron microscopy. By varying the relative lengths of Cu and Sn segments, we show that the metallurgical reaction starts at ~ 200 ° with the formation of a Cu–Sn solid solution for the Sn/Cu length ratio smaller than 1:5 while the formation of Cu–Sn intermetallic compounds (IMCs) for larger Sn/Cu length ratios. Upon heating the nanowires up to ~ 500 °C, two phase transformation pathways occur, η-Cu₆Sn₅ → ε-Cu₃Sn → δ-Cu₄₁Sn₁₁ for nanowires with a long Cu segment and η-Cu₆Sn₅ → ε-Cu₃Sn → γ-Cu₃Sn with amore » short Cu segment. The dynamic in situ TEM visualization of the evolution of Kirkendall voids demonstrates that Cu diffuses faster both in Sn and IMCs than that of Sn in Cu₃ and IMCs, which is the underlying cause of the dependence of the IMC formation and associated phase evolution on the relative lengths of the Cu and Sn segments.« less

  14. Recovery Act Helps GE in-source Manufacturing | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing September 30, 2010 - 2:21pm Addthis The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE Lindsay Gsell GE has a long history in Louisville, Ky. The company's appliance and lighting facility in Louisville has been manufacturing appliances

  15. Hubble space telescope and ground-based observations of the type Iax supernovae SN 2005hk and SN 2008A

    SciTech Connect (OSTI)

    McCully, Curtis; Jha, Saurabh W. [Department of Physics and Astronomy, Rutgers, the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, NJ 08854 (United States); Foley, Ryan J. [Astronomy Department, University of Illinois at Urbana-Champaign, 1002 West Green Street, Urbana, IL 61801 (United States); Chornock, Ryan [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Holtzman, Jon A. [Department of Astronomy, MSC 4500, New Mexico State University, P.O. Box 30001, Las Cruces, NM 88003 (United States); Balam, David D. [Dominion Astrophysical Observatory, Herzberg Institute of Astrophysics, 5071 West Saanich Road, Victoria, BC V9E 2E7 (Canada); Branch, David [Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman, OK 73019 (United States); Filippenko, Alexei V.; Ganeshalingam, Mohan; Li, Weidong [Department of Astronomy, University of California, Berkeley, CA 94720-3411 (United States); Frieman, Joshua [Kavli Institute for Cosmological Physics and Department of Astronomy and Astrophysics, University of Chicago, 5640 South Ellis Avenue, Chicago, IL 60637 (United States); Fynbo, Johan; Leloudas, Giorgos [Dark Cosmology Centre, Niels Bohr Institute, University of Copenhagen, Juliane Maries Vej 30, DK-2100 Copenhagen (Denmark); Galbany, Lluis [Institut de Fsica d'Altes Energies, Universitat Autnoma de Barcelona, E-08193 Bellaterra (Barcelona) (Spain); Garnavich, Peter M. [Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States); Graham, Melissa L. [Las Cumbres Observatory Global Telescope Network, Goleta, CA 93117 (United States); Hsiao, Eric Y. [Carnegie Observatories, Las Campanas Observatory, Colina El Pino, Casilla 601 (Chile); Leonard, Douglas C., E-mail: cmccully@physics.rutgers.edu [Department of Astronomy, San Diego State University, San Diego, CA 92182 (United States); and others

    2014-05-10

    We present Hubble Space Telescope (HST) and ground-based optical and near-infrared observations of SN 2005hk and SN 2008A, typical members of the Type Iax class of supernovae (SNe). Here we focus on late-time observations, where these objects deviate most dramatically from all other SN types. Instead of the dominant nebular emission lines that are observed in other SNe at late phases, spectra of SNe 2005hk and 2008A show lines of Fe II, Ca II, and Fe I more than a year past maximum light, along with narrow [Fe II] and [Ca II] emission. We use spectral features to constrain the temperature and density of the ejecta, and find high densities at late times, with n{sub e} ? 10{sup 9} cm{sup 3}. Such high densities should yield enhanced cooling of the ejecta, making these objects good candidates to observe the expected 'infrared catastrophe', a generic feature of SN Ia models. However, our HST photometry of SN 2008A does not match the predictions of an infrared catastrophe. Moreover, our HST observations rule out a 'complete deflagration' that fully disrupts the white dwarf for these peculiar SNe, showing no evidence for unburned material at late times. Deflagration explosion models that leave behind a bound remnant can match some of the observed properties of SNe Iax, but no published model is consistent with all of our observations of SNe 2005hk and 2008A.

  16. Pi in Applied Optics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inside the Applied Optics Lab II Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The sPI CAM: Inside the Applied Optics Lab II The sPI Cam visits the Applied Optics Lab to see how Mark Meyers, a physicist and optical engineer at GE Global Research, uses Pi. You Might Also Like lightning bolt We One-Upped Ben Franklin,

  17. Power Grid Optimization | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Optimization and Reliability Protect the Power Grid Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Optimization and Reliability Protect the Power Grid Using the power of software, machine learning, power systems, and other advanced analytics as well as next-generation design and visualization techniques, GE is

  18. Rodrigo Rodriguez Erdmenger | Inventors | GE Global Research

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    Rodrigo Rodriguez Erdmenger Rodrigo Rodriguez Erdmenger Research Engineer Turbomachinery Aero Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "What fuels my passion for work is knowing that I can impact the technology of GE products and lives of people all over the world." -Rodrigo Rodriguez Erdmenger Ask

  19. GE Global Research in Bangalore, India

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    Bangalore, India Bangalore, India The first GE Research & Development Center outside the U.S. applies cutting-edge technologies to solve challenges across the first and developing worlds. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Visit the Careers page to search and apply for Global Research jobs in Bangalore.

  20. GE Global Research in Oklahoma City

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    Oklahoma City, USA Oklahoma City, USA GE's first sector-specific global research center is dedicated to developing and accelerating innovative oil and gas technologies. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Visit the Careers page to search and apply for Global Research jobs in Oklahoma City. We also welcome

  1. Making Silicon Carbide Devices | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Making Silicon Carbide Devices in the Cleanroom Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Making Silicon Carbide Devices in the Cleanroom Ron Olson 2012.08.23 As the Wide Bandgap Process and Fab manager for the GE Global Research cleanroom, I wanted to take some time to give you the dirt on our clean room over the

  2. Advanced Propulsion Systems | GE Global Research

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    CFM LEAP Aircraft Engines Are Fuel- and Cost-Efficient Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) CFM LEAP Aircraft Engines Are Fuel- and Cost-Efficient The new LEAP engine, developed by CFM, has literally taken leaps in engine innovation in both fuel and cost efficiency. Scheduled to enter service in 2016, GE in

  3. Arc Flash Protection | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The Arc Flash Absorber in Bangalore Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The Arc Flash Absorber in Bangalore Take a sneak peek into the high-voltage lab in Bangalore and learn how GE researchers are helping to stabilize electrical distribution. You Might Also Like Munich_interior_V 10 Years ON: From the Lab

  4. Thermal Imaging Technologies | GE Global Research

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    Advanced Thermal Imaging Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Butterfly-Inspired Design Enables Advanced Thermal Imaging Bryan Whalen in the Electronics Cooling Lab at GE Global Research recorded this thermo graphic video of a Morpho butterfly structure in response to heat pulses produced by breathing onto

  5. Masako Yamada | Inventors | GE Global Research

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    Masako Yamada Masako Yamada Manager Advanced Computing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "I believe individuals should be given the chance to reinvent themselves. Recently, I've reinvented myself as a supercomputing person-again." -Masako Yamada Masako began her career at GE in applied optics,

  6. Metal MEMS Devices | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    MEMS: Inside the Global Research Cleanroom Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) MEMS: Inside the Global Research Cleanroom This follow-up to our introduction to MEMS takes you inside the GE Global Research cleanroom to see more about how MEMS are made. You Might Also Like 2-1-8-v-mems-applications Engineer

  7. Unit cell of strained GeSi

    SciTech Connect (OSTI)

    Woicik, J.C.; Bouldin, C.E.; Miyano, K.E.; King, C.A.

    1997-06-01

    The local structure within the unit cell of strained-GeSi layers grown on Si(001) has been examined by polarization-dependent extended x-ray-absorption fine structure. First-neighbor bond lengths are found to deviate only slightly from their unstrained values; however, the distortion of the cubic-unit cell by strain leads to measurable polarization-dependent changes in first-shell coordination and second-shell distances. A unifying picture of bond lengths and elasticity in strained-layer semiconductors is presented. {copyright} {ital 1997} {ital The American Physical Society}

  8. Inventors Behind General Electric | GE Global Research

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    Pierluigi Tenca Pierluigi Tenca Senior Engineer Electric Power Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) ""Because of its unique portfolio of technologies, GE is a fantastic place for multidisciplinary research. This is about learning and exploring."" -Pierluigi Tenca Pierluigi has three

  9. Inventors Behind General Electric | GE Global Research

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    Amol Kolwalkar Amol Kolwalkar Senior Engineer Control & Optimization Systems Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "What motivates me is the thrill and anticipation of finding something that was not previously identified." -Amol Kolwalkar Amol Kolwalkar epitomizes the GE Belief "deliver

  10. Inventors Behind General Electric | GE Global Research

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    Fabio Fonseca Fabio Fonseca Lead Engineer Software and Productivity Analytics CoE Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "I try to keep the big picture in mind, especially the positive impact I'm creating with my research." -Fabio Fonseca Fabio started with GE in 2012, where he focused on middleware