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1

Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing  

SciTech Connect

A study of the bandgap character of compressively strained GeSn{sub 0.060-0.091}/Ge(001) quantum wells grown by molecular beam epitaxy is reported. The built-in strain in GeSn wells leads to an increased separation between L and {Gamma} conduction band minima. The prevalent indirect interband transitions in GeSn were probed by photoluminescence spectroscopy. As a result we could simulate the L-valley bowing parameter in GeSn alloys, b{sub L} = 0.80 {+-} 0.06 eV at 10 K. From this we conclude that even compressively strained GeSn/Ge(001) alloys could become direct band gap semiconductors at the Sn-fraction higher than 17.0 at. %.

Tonkikh, Alexander A. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Institute for Physics of Microstructures RAS, GSP-105, Nizhniy Novgorod (Russian Federation); Eisenschmidt, Christian; Schmidt, Georg [Institute of Physics, Martin Luther University Halle-Wittenberg, Von-Danckelmann-Platz 3 D-01620, Halle (Saale) (Germany); Talalaev, Vadim G. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); ZIK SiLi-Nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3 D-06120, Halle (Saale) (Germany); Zakharov, Nikolay D.; Werner, Peter [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Schilling, Joerg [ZIK SiLi-Nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3 D-06120, Halle (Saale) (Germany)

2013-07-15T23:59:59.000Z

2

Das Mischungsverhalten von Nb3Sn mit Mo3Si, Mo3Ge und Nb3Ge  

Science Journals Connector (OSTI)

Mittels homogenisierter Sinter-und Schmelzproben wird die Bildung von lückenlosen Mischreihen zwischen Nb3Sn mit Mo3Si, Mo3Ge und Nb3Ge nachgewiesen.

H. Holleck; F. Benesovsky; H. Nowotny

1962-01-01T23:59:59.000Z

3

Electrical, optical, and thermal properties of Sn-doped phase change material Ge2Sb2Te5  

Science Journals Connector (OSTI)

In this article, effect of Sn on the electrical, optical, and thermal properties of Ge2Sb2Te5 is studied. Ge2Sb2Te5, Ge1.55Sb2Te5Sn0.45, and Ge1.1Sb2Te5Sn0.9...alloys are prepared by melt quenching technique and ...

Gurinder Singh; Aman Kaura; Monika Mukul; S. K. Tripathi

2013-01-01T23:59:59.000Z

4

Formation of non-substitutional ?-Sn defects in Ge{sub 1?x}Sn{sub x} alloys  

SciTech Connect

Although group IV semiconductor alloys are expected to form substitutionally, in Ge{sub 1?x}Sn{sub x} this is true only for low concentrations (x?Sn), consisting of a single Sn atom in the center of a Ge divacancy, which may account for the segregation of Sn at large x. Afterwards, the existence of this defect was confirmed experimentally. In this paper we study the local environment and the interactions of the substitutional defect (?-Sn), the vacancy in Ge, and the ?-Sn defect by performing extensive numerical ab initio calculations. Our results confirm that a ?-Sn defect can be formed by natural diffusion of a vacancy around the substitutional ?-Sn defect, since the energy barrier for the process is very small.

Fuhr, J. D. [Centro Atómico Bariloche-CNEA and CONICET, Av. Bustillo 9500, R8402AGP Bariloche (Argentina); Instituto Balseiro, Univ. Nac. de Cuyo and CNEA, 8400 Bariloche (Argentina); Ventura, C. I. [Centro Atómico Bariloche-CNEA and CONICET, Av. Bustillo 9500, R8402AGP Bariloche (Argentina); Sede Andina, Univ. Nac. de Río Negro, 8400 Bariloche (Argentina); Barrio, R. A. [Instituto de Física, U.N.A.M., 01000 Mexico, D.F. (Mexico)

2013-11-21T23:59:59.000Z

5

Substitutional incorporation of Sn in compressively strained thin films of heavily-alloyed Ge1 ? xSn  

Science Journals Connector (OSTI)

Short-range-order and long-range-order structures in Ge1 ? xSn x /Ge thin films grown by molecular beam epitaxy (MBE) were investigated by using extended x-ray absorption fine structure (EXAFS) and x-ray diffraction (XRD) techniques, respectively. These materials are of great potential for constructing efficient optoelectronic devices. The EXAFS analysis demonstrates that Sn atoms occupy Ge sites in these thin-film samples with Sn concentration up to 20 at.%. The Ge-Sn bonds expected in the substitutional model were also observed in Raman spectra of these samples. The XRD results show that, in the out-of-plane direction, the lattice constants of the films are distinctly larger than that of the Ge substrates. However, such increased lattice parameters were not observed in the in-plane direction. Our x-ray and Raman results have clearly revealed substitutional incorporation of Sn with high concentration in dislocation-free MBE-grown Ge films of practical-device thickness.

Y L Soo; T S Wu; Y C Chen; Y F Shiu; H J Peng; Y W Tsai; P Y Liao; Y Z Zheng; S L Chang; T S Chan; J F Lee; G E Sterbinsky; H Li; H H Cheng

2014-01-01T23:59:59.000Z

6

Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy  

SciTech Connect

Single crystal epitaxial Ge{sub 1?x}Sn{sub x} alloys with atomic fractions of tin up to x = 0.145 were grown by solid source molecular beam epitaxy on Ge (001) substrates. The Ge{sub 1?x}Sn{sub x} alloys formed high quality, coherent, strained layers at growth temperatures below 250 °C, as shown by high resolution X-ray diffraction. The amount of Sn that was on lattice sites, as determined by Rutherford backscattering spectrometry channeling, was found to be above 90% substitutional in all alloys. The degree of strain and the dependence of the effective unstrained bulk lattice constant of Ge{sub 1?x}Sn{sub x} alloys versus the composition of Sn have been determined.

Bhargava, Nupur; Coppinger, Matthew; Prakash Gupta, Jay; Kolodzey, James [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)] [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States); Wielunski, Leszek [Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States)] [Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States)

2013-07-22T23:59:59.000Z

7

Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy  

SciTech Connect

Infrared electroluminescence was observed from GeSn/Ge p-n heterojunction diodes with 8% Sn, grown by molecular beam epitaxy. The GeSn layers were boron doped, compressively strained, and pseudomorphic on Ge substrates. Spectral measurements indicated an emission peak at 0.57 eV, about 50 meV wide, increasing in intensity with applied pulsed current, and with reducing device temperatures. The total integrated emitted power from a single edge facet was 54 {mu}W at an applied peak current of 100 mA at 100 K. These results suggest that GeSn-based materials maybe useful for practical light emitting diodes operating in the infrared wavelength range near 2 {mu}m.

Gupta, Jay Prakash; Bhargava, Nupur; Kim, Sangcheol; Kolodzey, James [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)] [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States); Adam, Thomas [Nanofab, University of Albany, SUNY, Albany, New York 12203 (United States)] [Nanofab, University of Albany, SUNY, Albany, New York 12203 (United States)

2013-06-24T23:59:59.000Z

8

Indium (In)- and tin (Sn)-based metal induced crystallization (MIC) on amorphous germanium (?-Ge)  

Science Journals Connector (OSTI)

Abstract In this paper, metal-induced crystallization (MIC) phenomenon on ?-Ge by indium (In) and tin (Sn) are thoroughly investigated. In- and Sn-MIC process respectively started at 250 °C and 400 °C. Compared to the previously reported MIC samples including In-MIC, Sn-MIC process presented higher sheet resistance (similar to that of SPC) and bigger crystal grains above 50 nm (slightly smaller than that of SPC). According to SIMS analysis, Sn atoms diffused more slowly into Ge than In at 400 °C, providing lower density of heterogeneous nuclei induced by metals and consequently larger crystal grains.

Dong-Ho Kang; Jin-Hong Park

2014-01-01T23:59:59.000Z

9

Natural SnGeS3 from Radvanice near Trutnov (Czech Republic) :  

Science Journals Connector (OSTI)

...diffractometer HZG4/TuR (CuKalpha radiation, stepscanning). To minimize...graphite monochromatized MoKalpha-radiation. Data collection parameters...zaoek Ondurs, P. (1997): Naturally occuring germanium compounds, GeSnS3...

Jiri SEJKORA; Peter BERLEPSCH; Emil MAKOVICKY; Tonci BALI?-ZUNI?

10

Study on the Ge{sub 1?x}Sn{sub x}/HfO{sub 2} interface and its impacts on Ge{sub 1?x}Sn{sub x} tunneling transistor  

SciTech Connect

In this paper, we employ first-principle calculation to investigate the Ge{sub 1?x}Sn{sub x}/HfO{sub 2} interface, and then evaluate its impacts on Ge{sub 1?x}Sn{sub x} tunneling field-effect transistor (TFET). First-principle calculations of Ge{sub 1?x}Sn{sub x}/HfO{sub 2} interfaces in the oxygen-rich process atmosphere indicate that the interface states originate from the Ge and Sn dangling bond, rather than Hf-bond. The total density of state shows that there are more interface states in the semiconductor bandgap with increasing Sn fraction. By further incorporating the material and interface parameters from density functional theory calculation into advanced device simulation, the electrical characteristics of Ge{sub 1?x}Sn{sub x} TFET are investigated. Removing the Sn atom from the first atom layer of Ge{sub 1?x}Sn{sub x} in device processes is found to be beneficial to reduce the degradations. For the degradation mechanisms, the trap-assisted-tunneling is the dominant mechanism at the low Sn fraction, and enhanced Shockley-Read-Hall recombination induced by traps becomes the dominant mechanism with increasing Sn fraction. The results are helpful for the interface optimization of Ge{sub 1?x}Sn{sub x} TFET.

Qiu, Yingxin; Wang, Runsheng, E-mail: ruhuang@pku.edu.cn, E-mail: r.wang@pku.edu.cn; Huang, Qianqian; Huang, Ru, E-mail: ruhuang@pku.edu.cn, E-mail: r.wang@pku.edu.cn [Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871 (China)

2014-06-21T23:59:59.000Z

11

Molecular beam deposition of Al{sub 2}O{sub 3} on p-Ge(001)/Ge{sub 0.95}Sn{sub 0.05} heterostructure and impact of a Ge-cap interfacial layer  

SciTech Connect

We investigated the molecular beam deposition of Al{sub 2}O{sub 3} on Ge{sub 0.95}Sn{sub 0.05} surface with and without an ultra thin Ge cap layer in between. We first studied the atomic configuration of both Ge{sub 1-x}Sn{sub x} and Ge/Ge{sub 1-x}Sn{sub x} surfaces after deoxidation by reflection high-energy electron diffraction and resulted, respectively, in a c(4x2) and (2x1) surface reconstructions. After in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric we evidenced using time-of-flight secondary ion mass spectroscopy analyses that Sn diffusion was at the origin of high leakage current densities in the Ge{sub 1-x}Sn{sub x}/Al{sub 2}O{sub 3} gate stack. This damage could be avoided by inserting a thin 5-nm-thick Ge cap between the oxide and the Ge{sub 1-x}Sn{sub x} layer. Finally, metal-oxide-semiconductor capacitors on the Ge capped sample showed well-behaved capacitance-voltage (C-V) characteristics with interface trap density (D{sub it}) in the range of 10{sup 12} eV{sup -1} cm{sup -2} in mid gap and higher close to the valence band edge.

Merckling, C.; Franquet, A.; Vincent, B.; Vandervorst, W.; Loo, R.; Caymax, M. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001 Leuven (Belgium); Sun, X. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001 Leuven (Belgium); Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284 (United States); Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Zaima, S. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2011-05-09T23:59:59.000Z

12

Structure and magnetism in strained Ge{sub 1-x-y}Sn{sub x}Mn{sub y} films grown on Ge(001) by low temperature molecular beam epitaxy  

SciTech Connect

In this letter, we study the structural and magnetic properties of Ge{sub 1-x-y}Sn{sub x}Mn{sub y} films grown on Ge(001) by low temperature molecular beam epitaxy using X-ray diffraction, high resolution transmission electron microscopy, and superconducting quantum interference device. Like in Mn doped Ge films, Mn atoms diffuse during the growth and aggregate into vertically aligned Mn-rich nanocolumns of a few nanometers in diameter. Transmission electron microscopy observations in plane view clearly indicate that the Sn incorporation is not uniform with concentration in Mn rich vertical nanocolumns lower than the detection limit of electron energy loss spectroscopy. The matrix exhibits a GeSn solid solution while there is a Sn-rich GeSn shell around GeMn nanocolumns. The magnetization in Ge{sub 1-x-y}Sn{sub x}Mn{sub y} layers is higher than in Ge{sub 1-x}Mn{sub x} films. This magnetic moment enhancement in Ge{sub 1-x-y}Sn{sub x}Mn{sub y} is probably related to the modification of the electronic structure of Mn atoms in the nanocolumns by the Sn-rich shell, which is formed around the nanocolumns.

Prestat, E. [INAC, SP2M, CEA and Universite Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France); Karlsruher Institut fuer Technologie (KIT), Laboratorium fuer Elektronenmikroskopie, D-76128 Karlsruhe (Germany); Barski, A.; Bellet-Amalric, E.; Morel, R.; Tainoff, D.; Jain, A.; Porret, C.; Bayle-Guillemaud, P.; Jamet, M. [INAC, SP2M, CEA and Universite Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France); Jacquot, J.-F. [INAC, SCIB, CEA and Universite Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France)

2013-07-01T23:59:59.000Z

13

Atomic layer deposition of Al{sub 2}O{sub 3} on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment  

SciTech Connect

GeSn is quickly emerging as a potential candidate for high performance Si-compatible transistor technology. Fabrication of high-? gate stacks on GeSn with good interface properties is essential for realizing high performance field effect transistors based on this material system. We demonstrate an effective surface passivation scheme for n-Ge{sub 0.97}Sn{sub 0.03} alloy using atomic layer deposition (ALD) of Al{sub 2}O{sub 3}. The effect of pre-ALD wet chemical surface treatment is analyzed and shown to be critical in obtaining a good quality interface between GeSn and Al{sub 2}O{sub 3}. Using proper surface pre-treatment, mid-gap trap density for the Al{sub 2}O{sub 3}/GeSn interface of the order of 10{sup 12}?cm{sup ?2} has been achieved.

Gupta, Suyog, E-mail: suyog@stanford.edu; Chen, Robert; Harris, James S.; Saraswat, Krishna C. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)] [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

2013-12-09T23:59:59.000Z

14

Neutral and negatively charged Al12X (X=Si, Ge, Sn, Pb) clusters studied from first principles S. F. Li1,2 and X. G. Gong1  

E-Print Network (OSTI)

Neutral and negatively charged Al12X (X=Si, Ge, Sn, Pb) clusters studied from first principles S. F neutral and anionic Al12X X=Si, Ge, Sn, Pb clusters. We find that both neutral and charged Al12Si cluster prefer icosahedral structure, in agreement with previous calculations. However, each of Al12X X=Ge, Sn

Gong, Xingao

15

Structural and optical characterization of Si{sub x}Ge{sub 1-x-y}Sn{sub y} alloys grown by molecular beam epitaxy  

SciTech Connect

Si{sub x}Ge{sub 1-x-y}Sn{sub y} alloys were grown by molecular beam epitaxy at low temperature, followed by ex-situ annealing. The crystal quality of Si{sub x}Ge{sub 1-x-y}Sn{sub y} layers was characterized by atomic force microscopy and transmission electron microscopy. The compositions and lattice constants of the alloys were studied by x-ray photoelectron spectroscopy and x-ray diffraction. The results show that Vegard's law is a good approximation for Si{sub x}Ge{sub 1-x-y}Sn{sub y} alloys. Photoreflectance spectroscopy at room temperature was used to determine the direct bandgap energy of Si{sub x}Ge{sub 1-x-y}Sn{sub y} layers. Analyzing the relationship between composition and direct bandgap energy reveals a negative energy bowing parameter for SiSn.

Lin, Hai [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Chen, Robert; Huo Yijie; Kamins, Theodore I.; Harris, James S. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Lu Weisheng [Institute of Photonics, University of Strathclyde, Glasgow G4 0NW (United Kingdom)

2012-04-02T23:59:59.000Z

16

125Te NMR chemical-shift trends in PbTe–GeTe and PbTe–SnTe alloys  

SciTech Connect

Complex tellurides, such as doped PbTe, GeTe, and their alloys, are among the best thermoelectric materials. Knowledge of the change in 125Te NMR chemical shift due to bonding to dopant or “solute” atoms is useful for determination of phase composition, peak assignment, and analysis of local bonding. We have measured the 125Te NMR chemical shifts in PbTe-based alloys, Pb1?xGexTe and Pb1?xSnxTe, which have a rocksalt-like structure, and analyzed their trends. For low x, several peaks are resolved in the 22-kHz MAS 125Te NMR spectra. A simple linear trend in chemical shifts with the number of Pb neighbors is observed. No evidence of a proposed ferroelectric displacement of Ge atoms in a cubic PbTe matrix is detected at low Ge concentrations. The observed chemical shift trends are compared with the results of DFT calculations, which confirm the linear dependence on the composition of the first-neighbor shell. The data enable determination of the composition of various phases in multiphase telluride materials. They also provide estimates of the 125Te chemical shifts of GeTe and SnTe (+970 and +400±150 ppm, respectively, from PbTe), which are otherwise difficult to access due to Knight shifts of many hundreds of ppm in neat GeTe and SnTe.

Njegic, Bosiljka [Ames Laboratory; Levin, Evgenii M. [Ames Laboratory; Schmidt-Rohr, Klaus [Ames Laboratory

2013-10-08T23:59:59.000Z

17

In search of high performance anode materials for Mg batteries: computational studies of Mg in Ge, Si, and Sn  

E-Print Network (OSTI)

We present ab initio studies of structures, energetics, and diffusion properties of Mg in Si, Ge, and Sn diamond structures to evaluate their potential as insertion type anode materials for Mg batteries. We show that Si could provide the highest specific capacities (3817 mAh g-1) and the lowest average insertion voltage (~0.15 eV vs. Mg) for Mg storage. Nevertheless, due to its significant percent lattice expansion (~216%) and slow Mg diffusion, Sn and Ge are more attractive; both anodes have lower lattice expansions (~120 % and ~178 %, respectively) and diffusion barriers (~0.50 and ~0.70 eV, respectively for single-Mg diffusion) than Si. We show that Mg-Mg interactions at different stages of charging can decrease significantly the diffusion barrier compared to the single atom diffusion, by up to 0.55 eV.

Malyi, Oleksandr I; Manzhos, Sergei; 10.1016/j.jpowsour.2013.01.114

2013-01-01T23:59:59.000Z

18

Electron-phonon interactions and superconductivity in Si, Ge, and Sn  

Science Journals Connector (OSTI)

The pseudopotential-total-energy method is used to calculate the phonon frequency, the electron density of states at the Fermi level, and the electron-phonon coupling constant for the group-IV elements in the metallic ?-Sn structure. For these elements, the normal-state behavior is similar to that found in other simple and transition metals; the phonon frequencies, force constants, and electron-phonon matrix elements increase with increasing average electron density. With use of a semiempirical treatment of the electron-phonon coupling calculated for one phonon wave vector, the superconducting transition temperatures at normal and high pressures are examined. The superconducting transition temperature decreases while the magnitude of its pressure coefficient increases in going to heavier elements. This behavior is in good agreement with experiment. For Si and Ge, the superconducting behavior is similar to that of white tin. Because of competition and compensation between the cutoff in the phonon spectrum and the electron-phonon matrix element, the electron-phonon coupling ?’s are similar for the three elements. Hence, the Debye temperature, which is the prefactor of the McMillan equation, dominates in determining the superconducting critical temperatures.

K. J. Chang and Marvin L. Cohen

1986-10-01T23:59:59.000Z

19

Sr{sub 7}Ge{sub 6}, Ba{sub 7}Ge{sub 6} and Ba{sub 3}Sn{sub 2} -Three new binary compounds containing dumbbells and four-membered chains of tetrel atoms with considerable Ge-Ge {pi}-bonding character  

SciTech Connect

The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} were prepared by arc melting and annealing in welded tantalum ampoules using induction as well as resistance furnaces. The compounds were investigated by powder and single crystal X-ray diffraction. Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} crystallize in the Ca{sub 7}Sn{sub 6} structure type (space group Pmna, Z=4: a=7.777(2) A, b=23.595(4) A, c=8.563(2) A, wR{sub 2}=0.081 (all data), 2175 independent reflections, 64 variable parameters for Sr{sub 7}Ge{sub 6} and a=8.0853(6) A, b=24.545(2) A, c=8.9782(8) A, wR{sub 2}=0.085 (all data), 2307 independent reflections, 64 variable parameters for Ba{sub 7}Ge{sub 6}). Ba{sub 3}Sn{sub 2} crystallizes in an own structure type with the space group P4{sub 3}2{sub 1}2, Z=4, a=6.6854(2) A, c=17.842(2) A, wR{sub 2}=0.037 (all data), 1163 independent reflections, 25 variable parameters. In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains. Their crystal structures cannot be rationalized according to the (8-N) rule. In contrast, Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. The chemical bonding situation in these structures is discussed on the basis of partial and total Density Of States (DOS) curves, band structures including fatbands, topological analysis of the Electron Localization Function (ELF) as well as Bader analysis of the bond critical points using the programs TB-LMTO-ASA and WIEN2K. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, all germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. The {pi}-bonding character of the germanides is best reflected by the resonance hybrid structures {l_brace}[Ge-Ge]{sup 6-}/[Ge-{sup ....}Ge-{sup ....}Ge-{sup ....}Ge]{sup 8-}{r_brace}{r_reversible}{l_brace}[Ge=Ge]{sup 4-}/[Ge-Ge-Ge-Ge]{sup 10-}{r_brace}. - Graphical abstract: The structure of Ba{sub 3}Sn{sub 2} contains Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains are the predominant features in Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6}. Their crystal structures cannot be rationalized according to the (8-N) rule. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, the germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. Highlights: Black-Right-Pointing-Pointer The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} have been synthesized. Black-Right-Pointing-Pointer In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as dumbbells and four-membered atom chains. Black-Right-Pointing-Pointer Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif. Black-Right-Pointing-Pointer The chemical bonding situation within these structures is discussed.

Siggelkow, Lisa; Hlukhyy, Viktor [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany); Faessler, Thomas F., E-mail: thomas.faessler@lrz.tum.de [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany)

2012-07-15T23:59:59.000Z

20

Wave-function engineering and absorption spectra in Si{sub 0.16}Ge{sub 0.84}/Ge{sub 0.94}Sn{sub 0.06}/Si{sub 0.16}Ge{sub 0.84} strained on relaxed Si{sub 0.10}Ge{sub 0.90} type I quantum well  

SciTech Connect

We theoretically investigate germanium-tin alloy as a semiconductor for the design of near infrared optical modulators in which the Ge{sub 1?x}Sn{sub x} alloy is the active region. We have calculated the electronic band parameters for heterointerfaces between strained Ge{sub 1?x}Sn{sub x} and relaxed Si{sub 1?y}Ge{sub y}. Then, a type-I strain-compensated Si{sub 0.10}Ge{sub 0.90}/Si{sub 0.16}Ge{sub 0.84}/Ge{sub 0.94}Sn{sub 0.06} quantum well heterostructure optimized in terms of compositions and thicknesses is studied by solving Schrödinger equation without and under applied bias voltage. The strong absorption coefficient (>1.5?×?10{sup 4}?cm{sup ?1}) and the shift of the direct transition under large Stark effect at 3?V are useful characteristics for the design of optoelectronic devices based on compressively strained IV-IV heterostructures at near infrared wavelengths.

Yahyaoui, N., E-mail: naima.yahyaoui@yahoo.fr, E-mail: moncef-said@yahoo.fr; Sfina, N.; Said, M., E-mail: naima.yahyaoui@yahoo.fr, E-mail: moncef-said@yahoo.fr [Laboratoire de la Matière Condensée et des Nanosciences (LMCN), Département de Physique, Faculté des Sciences de Monastir, Avenue de l'Environnement, 5019 Monastir (Tunisia); Lazzari, J.-L. [Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), UMR CNRS 7325, Aix-Marseille Université, Case 913, Campus de Luminy, 13288 Marseille cedex 9 (France); Bournel, A. [Institut d'Electronique Fondamentale (IEF), UMR CNRS 8622, Université Paris-Sud, Bât. 220, 91405 Orsay cedex (France)

2014-01-21T23:59:59.000Z

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21

Field-Induced Spin-Flop in Antiferromagnetic Semiconductors with Commensurate and Incommensurate Magnetic Structures: Li2FeGeS4 (LIGS) and Li2FeSnS4 (LITS)  

Science Journals Connector (OSTI)

Li2FeGeS4 (LIGS) and Li2FeSnS4 (LITS), which are among the first magnetic semiconductors with the wurtz-kesterite structure, exhibit antiferromagnetism with TN ? 6 and 4 K, respectively. Both compounds undergo a conventional metamagnetic transition that ...Divalent ions are directed to specific locations within the structures of the Li2?Fe?IV?S4 diamond-like materials to generate antiferromagnetic ordering. Both compounds undergo a reversible spin-flop transition. Changing the tetravalent ion in these materials alters the bandgaps and magnetic structures. The indirect-gap (Eg = 1.4 eV) semiconductor Li2FeGeS4 has a magnetic structure that is commensurate with the nuclear structure, while Li2FeSnS4 has a direct bandgap (Eg = 1.9 eV) and an incommensurate magnetic structure.

Jacilynn A. Brant; Clarina dela Cruz; Jinlei Yao; Alexios P. Douvalis; Thomas Bakas; Monica Sorescu; Jennifer A. Aitken

2014-11-14T23:59:59.000Z

22

Elucidation of the Thermochemical Properties of Triphenyl- or Tributyl-Substituted Si-, Ge-, and Sn-Centered Radicals by Means of Electrochemical Approaches and Computations  

Science Journals Connector (OSTI)

As working electrode, a net made of carbon fibers (Grafil 34, Grafil Inc.) or a gold mini-grid (1000 mesh, Dansk Hollandsk Ædelmetal) was used. ... Figure 1 Photomodulated voltammograms of (A) Ph3Si• generated by photolysis of 10 vol % (tert-BuO)2 + 0.5 M Ph3SiH in 0.1 M Bu4NClO4/MeCN at a gold mini-grid electrode; (B) Ph3Sn• generated by photolysis of 0.025 M (Ph3Sn)2 in 0.3 M Bu4NBF4/THF at a carbon fiber net; (C) Bu3Sn• generated by photolysis of 0.02 M (Bu3Sn)2 in 0.3 M Bu4NBF4/THF at a gold mini-grid electrode; and (D) Bu3Sn• generated by photolysis of 10 vol % (tert-BuO)2 + 0.02 M Bu3SnH in 0.1 M Bu4NClO4/MeCN at a gold mini-grid electrode. ...

Allan Hjarbæk Holm; Tore Brinck; Kim Daasbjerg

2005-02-03T23:59:59.000Z

23

SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6} - two new Ae-Zn-Sn polar intermetallic compounds (Ae: alkaline earth metal)  

SciTech Connect

SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6}, two closely related new polar intermetallic compounds, were obtained by high temperature reactions of the elements. Their crystal structures were determined with single crystal XRD methods, and their electronic structures were analyzed by means of DFT calculations. The Zn-Sn structure part of SrZn{sub 2}Sn{sub 2} comprises (anti-)PbO-like {l_brace}ZnSn{sub 4/4}{r_brace} and {l_brace}SnZn{sub 4/4}{r_brace} layers. Ca{sub 2}Zn{sub 3}Sn{sub 6} shows similar {l_brace}ZnSn{sub 4/4}{r_brace} layers and {l_brace}Sn{sub 4}Zn{r_brace} slabs constructed of a covalently bonded Sn scaffold capped by Zn atoms. For both phases, the two types of layers are alternatingly stacked and interconnected via Zn-Sn bonds. SrZn{sub 2}Sn{sub 2} adopts the SrPd{sub 2}Bi{sub 2} structure type, and Ca{sub 2}Zn{sub 3}Sn{sub 6} is isotypic to the R{sub 2}Zn{sub 3}Ge{sub 6} compounds (R=La, Ce, Pr, Nd). Band structure calculations indicate that both SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6} are metallic. Analyses of the chemical bonding with the electron localization function (ELF) show lone pair like basins at Sn atoms and Zn-Sn bonding interactions between the layers for both title phases, and covalent Sn-Sn bonding within the {l_brace}Sn{sub 4}Zn{r_brace} layers of Ca{sub 2}Zn{sub 3}Sn{sub 6}. - Graphical abstract: Crystal structures of the new Ae-Zn-Sn polar intermetallic phases SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6}. Highlights: Black-Right-Pointing-Pointer New polar intermetallic phases SrZn{sub 2}Sn{sub 2} and Ca{sub 2}Zn{sub 3}Sn{sub 6}. Black-Right-Pointing-Pointer Obtained by high temperature reactions of the elements. Black-Right-Pointing-Pointer Single crystal XRD structure determination and DFT electronic structure calculations. Black-Right-Pointing-Pointer Closely related crystal and electronic structures. Black-Right-Pointing-Pointer Metallic conductivity coexisting with lone pairs and covalent bonding features.

Stegmaier, Saskia [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstrasse 4, 85747 Garching (Germany); Faessler, Thomas F., E-mail: Thomas.Faessler@lrz.tum.de [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstrasse 4, 85747 Garching (Germany)

2012-08-15T23:59:59.000Z

24

Effects of morphology on the electronic and transport properties of Sn-based clathrates  

Science Journals Connector (OSTI)

Density-functional calculations are used to study the electronic structure and transport properties of the type-I clathrates K 8 Sn 46 and K 8 Sn 44 ? 2 (? is a missing Sn atom) and the type-III clathrate K 8 Sn 25 . We show K 8 Sn 44 ? 2 to be more stable than the defect-free K 8 Sn 46 with K 8 Sn 46 being metallic and K 8 Sn 44 ? 2 ; semimetallic. K 8 Sn 25 is a zintl-phase semiconductor with a band gap of 0.5 eV. It has flatter bands than the type-I clathrates and can be expected to exhibit a smaller electrical conductivity but much larger Seebeck coefficient than the almost zintl K 8 Sn 44 ? 2 . The figure of merit of the type-III clathrate is an order of magnitude larger than its type-I counterparts. This would make a suitably doped K 8 Sn 25 at least as good a thermoelectric as the best Ge-based type-I clathrates and potentially better depending on the momentum relaxation time for carriers in this material.

Lone Møllnitz; Nick P. Blake; Horia Metiu

2002-01-01T23:59:59.000Z

25

Building | GE Global Research  

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Scientists at GE Global Research get into the holiday spirit by bringing high-tech additive manufacturing techniques to Christmas... Read More Global Research and GE...

26

GE Research and Development | GE Global Research  

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a decade of innovation Closing the Culture Gap Between Academia and Industry Additive Manufacturing Demonstration at GE Global Research innovate Latest News U.S....

27

Working at GE Global Research | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

> Why GE Why GE Fostering curiosity and work that makes a big impact on the world. That's how GE helps keep talented researchers motivated. Inspire For our scientists,...

28

6.3.2 Ge spinels and substituted Ge spinels  

Science Journals Connector (OSTI)

Al-Ge-Li-O: LiGeAlO4 (Sp). Co-Ga-Ge-O: Co1+xGa2-2xGexO4 (Sp). Co-Ge-L-Li-O: Co0.5LiGeL5O4 (Sp). Co-Ge-Mg-O: Co2-xMgxGeO4 (Sp). Co-Ge-Ni-O: CoNiGeO4 (Sp). Co-Ge-O-Zn: Co2-xZnxGeO4 (Sp). Co-Ge-O: C...

D. Bonnenberg; H.P.J. Wijn

1970-01-01T23:59:59.000Z

29

SN2, SN1 Reactions; Mechanisms and Arrow-Pushing 44 Chem 355-Jasperse  

E-Print Network (OSTI)

SN2, SN1 Reactions; Mechanisms and Arrow-Pushing 44 Chem 355-Jasperse STRUCTURAL EFFECTSL of solution (NaI/acetone for the SN2 reactions, AgNO3/ethanol for the SN1 reactions), [stopper the tube reaction speed. For the SN2 reaction (Part 1), need samples 1, 2, 3, 4, 7, 8, 10, 11. For the SN1 reaction

Jasperse, Craig P.

30

Chevron, GE form Technology Alliance  

NLE Websites -- All DOE Office Websites (Extended Search)

Chevron, GE form Technology Alliance Chevron, GE form Technology Alliance The Chevron GE Technology Alliance will develop and commercialize valuable technologies to solve critical...

31

Curing | GE Global Research  

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this paper-based instrument, the size of a deck of playing cards, enables... Read More Additive Manufacturing Demonstration at GE Global Research See how GE Global Research is...

32

GE Global Research  

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geglobalresearch.com Fri, 30 Jan 2015 17:46:29 +0000 en-US hourly 1 GE Researcher: Putting GE Beliefs into Action http:www.geglobalresearch.comblogcutting-edge-technology-peopl...

33

GE Healthcare Antibody Purification  

E-Print Network (OSTI)

.....................................................................................................................4 Chapter 3. Small-scale purification by affinity chromatography......................43 GeneralGE Healthcare Antibody Purification Handbook GE Healthcare imagination at work agination at work Purification Handbook Principles and Methods 18-1142-75 Isolation of mononuclear cells Methodology

Lebendiker, Mario

34

GE and Quirky | GE Global Research  

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a partnership that introduces a whole new way of inventing. We teamed up with Quirky, the social product development company, to give everyday inventors access to GE's patents to...

35

SN Environmental Review (NEPA)  

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Rates Rates You are here: SN Home page > Environment Environmental Review-NEPA Major Initiatives are the large projects that SNR is currently involved in. As new projects are added, and existing ones completed, you will find current information and updates in this area. Environmental Impact Statement-EIS Sacramento Area Voltage Support Trinity PUD Interconnection Projects Alternative Intake Project Transmission Line and Interconnection Delta-Mendota Canal / California Aqueduct Intertie (PDF - 17MB) Sutter Power Project San Luis Transmission Project Environmental Assessment-EA San Joaquin Valley Right-of-Way Maintenance Project North Area Right-of-Way Maintenance Project Sacramento Valley Right-of-Way Maintenance Project Categorical Exclusions-CX Cottonwood - Roseville OPGW Project CX (PDF - 6787KB)

36

Powering | GE Global Research  

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Trials GE Global Research is advancing technology that will make the inspection of wind turbines faster and more reliable for customers.... Read More Brilliant(tm) Wind...

37

Predix | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

developed over the last three years and was first announced publicly at GE's Minds+Machines conference in Chicago, Illinois, in October 2013. Predix enables asset and operations...

38

Structural studies of two novel La-Sn compounds: La30Sn30 and La32Ni2Sn35  

SciTech Connect

Two novel intermetallic compounds containing lanthanum and tin have been obtained for the first time. Single crystal structures of these two phases, La{sub 30}Sn{sub 30} and La{sub 32}Ni{sub 2}Sn{sub 35} have been studied by X-ray crystallography. La{sub 30}Sn{sub 30} is a new 1:1 binary containing La and Sn and has been refined in the Cmmm space group. This phase was made at high temperatures (<1200 C) from a loaded composition of La{sub 68}Sn{sub 70}. Unlike the reported 1:1 binary, LaSn which crystallizes in the Cmcm space group (only powder X-ray diffraction studies reported), La{sub 30}Sn{sub 30} forms good crystals for structural determination. The crystal structure of La{sub 30}Sn{sub 30} show Sn-Sn dimers and Sn-centered, face-sharing biaugmented triangular prisms composed of La atoms. La{sub 30}Sn{sub 30} does not belong to any known structure-type. La{sub 32}Ni{sub 2}Sn{sub 35} was obtained in high yields at high temperatures (> 1200 C) and refined in the 14/mmm space group. It belongs to the USi structure type in which the Ni/Sn atoms occupy the Si sites, and La/Sn atoms occupy the U sites. The crystal structure of La{sub 32}Ni{sub 2}Sn{sub 35} consists of buckled sheets made from La-centered, corner-shared octahedra of Sn. These sheets are intraconnected through Ni-Sn-Ni bonds along the c-axis. The crystals are not air sensitive, unlike La{sub 30}Sn{sub 30}, which can be attributed to the presence of Ni in the crystal structure.

Yang, Amie S.

2005-05-01T23:59:59.000Z

39

GE, Sandia National Lab Improve Wind Turbines | GE Global Research  

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GE, Sandia National Lab Discover Pathway to Quieter, More Productive Wind Turbines GE, Sandia National Lab Discover Pathway to Quieter, More Productive Wind Turbines Use of...

40

Chevron, GE form Technology Alliance  

NLE Websites -- All DOE Office Websites (Extended Search)

Chevron, GE form Technology Alliance February 3, 2014 HOUSTON, TX, Feb. 3, 2014-Chevron Energy Technology Company and GE Oil & Gas announced today the creation of the Chevron GE...

Note: This page contains sample records for the topic "uut ge sn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Carousolar | GE Global Research  

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Fun Carousolar Uses Solar Power for Fun This amazing all-white carousel is powered by 100 solar panels and lit up by GE's colorful TETRA Countour LED lights. You Might Also Like...

42

Ge-Au eutectic bonding of Ge {100} single crystals  

Science Journals Connector (OSTI)

We present preliminary results on the eutectic bonding between two {100} Ge single crystal surfaces using thin films of ... Au sample show epitaxial growth of Ge. In sections of the bond, lattice continuity...

W. B. Knowlton; K. M. Itoh; J. W. Beeman; J. H. Emes…

1993-11-01T23:59:59.000Z

43

Colon Cancer Mapping | GE Global Research  

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Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Vanderbilt University has partnered with GE Global...

44

GE | OpenEI Community  

Open Energy Info (EERE)

by Jessi3bl(15) Member 16 December, 2012 - 19:18 GE, Clean Energy Fuels Partner to Expand Natural Gas Highway clean energy Clean Energy Fuels energy Environment Fuel GE Innovation...

45

Sn and SnO2-graphene composites as anode materials for lithium-ion batteries  

Science Journals Connector (OSTI)

Sn and SnO2-graphene composites were synthesized using hydrothermal process, followed by annealing in Ar/H2 atmosphere, and characterized using x-ray diffraction, scanning electron microscopy, and transition elec...

Qi-Hui Wu; Chundong Wang; Jian-Guo Ren

2013-12-01T23:59:59.000Z

46

(La0.3Ge0.7)(Ni0.85Ge0.15)2Ge2  

Science Journals Connector (OSTI)

It contains the standardized crystallographic data set of (La0.3Ge0.7)(Ni0.85Ge0.15)2Ge2 representing the structure type (La0.30Ge0.70)(Ni0.85Ge0.15)2Ge2.

P. Villars; K. Cenzual; J. Daams…

2011-01-01T23:59:59.000Z

47

States in Sb126 populated in the ? decay of 105-yr Sn126  

Science Journals Connector (OSTI)

The low-energy level structure of the odd-odd nucleus Sb126 has been investigated by studying the radioactive decay of 105-yr Sn126, using Ge(Li) and Si(Li) detectors. Based on conversion-electron and ?-ray singles data, ?-? and ?-e- prompt and delayed coincidence measurements, and complementary ?-ray energy and intensity balance arguments, a decay scheme for Sn126 has been deduced which accommodates all of the observed ?-ray transitions. The energies (keV), spins, and parities of the levels established in Sb126 are as follows: 0.0 [8-], 17.7 [5+], 40.4 [3-], 83.1 [4-, (3-)], 104.7 [3+], and 128.0 [2+]. The respective half-lives of these six states are: 12.4 day, 19.0 min, ?11 s, 5.1 ns, 553 ns, and 78.0 ns, the latter four values having been determined in the present investigation. The level assignments are discussed within the framework of the single-particle shell model and in relation to the proposed assignments of low-lying energy levels of neighboring odd-odd antimony isotopes.RADIOACTIVITY Sn126 [from U235(n,f)]; measured E?, I?, Ice, ?-?, ?-?, and e-? coin, level T12's; deduced ICC, ? multipolarities, Sb126 levels, J, ?; calculated ?-hindrance factors. Ge(Li), Si(Li) detectors; mass-separated source.

H. A. Smith; Jr.; M. E. Bunker; J. W. Starner; C. J. Orth; K. E. G. Löbner

1976-01-01T23:59:59.000Z

48

Solvents effect on SN2 reactions  

Science Journals Connector (OSTI)

We attempt to find out the origin of rate difference of the SN2 reaction in the gas phase and in the aqueous solution which is about twenty orders of magnitude. To do this, we calculate the interaction energies o...

Young Shik Kong; Mu Shik Jhon

1986-08-01T23:59:59.000Z

49

Advances in Nb3Sn Performance  

SciTech Connect

Nb{sub 3}Sn wires with non-Cu critical current densities (J{sub c}) that surpass 3 kAmm{sup -2} at 12 T and 4.2 K are commercially available in piece lengths longer than 10 km. Accelerator-type magnets that utilize these conductors have achieved record magnetic fields. This article summarizes key developments in the last decade that have led to these significant improvements in the performance of Nb{sub 3}Sn wires.

Godeke, Arno

2008-05-19T23:59:59.000Z

50

Natural Gas Locomotive | GE Global Research  

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government. GE engineers are currently testing a fuel mixture that is 80% LNG, and 20% diesel using existing engine hardware. GE engineers continue to address several challenges...

51

New Medical Technology | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

of care and expanding medical treatment boundaries. Home > Innovation > Healthcare Additive Manufacturing Demonstration at GE Global Research See how GE Global Research is...

52

Hospital Sterile Processing | GE Global Research  

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Researches Use of Robots for Hospital Sterile Processing GE Researches Use of Robots for Hospital Sterile Processing GE principal investigator Lynn DeRose discusses the robotic...

53

Oil & Gas Technology Center | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Global Research Oil & Gas Technology Center GE Global Research Oil & Gas Technology Center Mark Little, SVP and chief technology officer for GE, and Eric Gebhardt, vice president...

54

GE Innovation and Manufacturing in Europe | GE Global Research  

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Wins Award 1-2-38-v-software-reliability-engineering A Stochastic Process-Based Look at Software Reliability 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom...

55

GE Global Research Europe, Munich, Germany | GE Global Research  

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Munich, Germany Munich, Germany With a hand in nearly all GE research fields, this center is a hub of commercial and industrial science and technology innovation. Visit the Careers...

56

STRUCTURE AND HIGH-FIELD PERFORMANCE OF JELLY ROLL PROCESSED Nb{sub 3}Sn WIRES USING Sn-Ta AND Sn-Ti BASED ALLOY SHEET  

SciTech Connect

Sn-Ta based alloy buttons of different compositions were prepared by the melt diffusion process among constituent metal powders, and then pressed into plates. Meanwhile Sn-Ti based alloy plates were sliced from the melt and cast ingot. Resulting Sn-based alloy plates were rolled into thin sheets. The Sn-based alloy sheet was laminated with a Nb sheet, and wound into a Jelly Roll (JR) composite. The composite was encased in a sheath, and fabricated into a thin wire followed by the heat treatment. The application of hydrostatic extrusion is useful at the initial stage of the fabrication. The JR wires using Sn-Ta and Sn-Ti based alloy sheets show a non-Cu J{sub c} of {approx}250 A/mm{sup 2} and {approx}150 A/mm{sup 2} at 20 T and 22 T, respectively, at 4.2 K. It has been found that the Nb impregnates into the Sn-based alloy layers during the reaction, and Nb{sub 3}Sn layers are synthesized by the mutual diffusion between the Nb sheet and the Sn-based alloy sheet without formation of voids. Sn-Ti based alloy sheets are attractive due to their easiness of mass production. Structure and high-field performance of JR processed Nb{sub 3}Sn wires prepared from Sn-based alloy sheets with different compositions are compared in this article.

Tachikawa, K.; Tsuyuki, T.; Hayashi, Y.; Nakata, K. [Faculty of Engineering, Tokai University Hiratsuka, Kanagawa 259-1292 (Japan); Takeuchi, T. [National Institute for Materials Science Tsukuba, Ibaraki 305-0047 (Japan)

2008-03-03T23:59:59.000Z

57

4.3.2 Ge spinels and Ge spinels with substitutions  

Science Journals Connector (OSTI)

Al-Ge-Li-O-Zn: Li5Al5Zn8Ge9O36 (Sp). Al-Ge-Li-O: Li0.5+0.5xGexAl2.5-1.5xO4 (Sp). Al-Ge-O-Zn: Zn2GeO4: Al (Sp). Co-Fe-Ge-O: Co2-2xFe2xGeO4 (Sp). Co-Ge-L-Li-O: Co0.5LiGeL5O4 (Sp). Co-Ge-Mg-O: Co2-x

D. Bonnenberg; K. A. Hempel

1980-01-01T23:59:59.000Z

58

Coulomb Excitation of Sn104 and the Strength of the Sn100 Shell Closure  

Science Journals Connector (OSTI)

A measurement of the reduced transition probability for the excitation of the ground state to the first 2+ state in Sn104 has been performed using relativistic Coulomb excitation at GSI. Sn104 is the lightest isotope in the Sn chain for which this quantity has been measured. The result is a key point in the discussion of the evolution of nuclear structure in the proximity of the doubly magic nucleus Sn100. The value B(E2;0+?2+)=0.10(4) e2b2 is significantly lower than earlier results for Sn106 and heavier isotopes. The result is well reproduced by shell model predictions and therefore indicates a robust N=Z=50 shell closure.

G. Guastalla et al.

2013-04-23T23:59:59.000Z

59

Isospin Diffusion and Equilibration for Sn+Sn collisions at E/A=35 MeV  

E-Print Network (OSTI)

Equilibration and equilibration rates have been measured by colliding Sn nuclei with different isospin asymmetries at beam energies of E/A=35 MeV. Using the yields of mirror nuclei of 7Li and 7Be, we have studied the diffusion of isospin asymmetry by combining data from asymmetric 112Sn+124Sn and 124Sn+112Sn collisions with that from symmetric 112Sn+112Sn and 124Sn+124Sn collisions. We use these measurements to probe isospin equilibration in central collisions where nucleon-nucleon collisions are strongly blocked by the Pauli exclusion principal. The results are consistent with transport theoretical calculations that predict a degree of transparency in these collisions, but inconsistent with the emission of intermediate mass fragments by a single chemically equilibrated source. Comparisons with ImQMD calculations are consistent with results obtained at higher incident energies that provide constraints on the density dependence of the symmetry energy.

Sun, Z Y; Lynch, W G; Verde, G; Amorini, F; Andronenko, L; Andronenko, M; Cardella, G; Chatterje, M; Danielewicz, P; De Filippo, E; Dinh, P; Galichet, E; Geraci, E; Hua, H; La Guidara, E; Lanzalone, G; Liu, H; Lu, F; Maiolino, C; Pagano, A; Piantelli, S; Papa, M; Pirrone, S; Politi, G; Porto, F; Rizzo, F; Russotto, P; Santonocito, D; Zhang, Y X

2010-01-01T23:59:59.000Z

60

Isospin Diffusion and Equilibration for Sn+Sn collisions at E/A=35 MeV  

E-Print Network (OSTI)

Equilibration and equilibration rates have been measured by colliding Sn nuclei with different isospin asymmetries at beam energies of E/A=35 MeV. Using the yields of mirror nuclei of 7Li and 7Be, we have studied the diffusion of isospin asymmetry by combining data from asymmetric 112Sn+124Sn and 124Sn+112Sn collisions with that from symmetric 112Sn+112Sn and 124Sn+124Sn collisions. We use these measurements to probe isospin equilibration in central collisions where nucleon-nucleon collisions are strongly blocked by the Pauli exclusion principal. The results are consistent with transport theoretical calculations that predict a degree of transparency in these collisions, but inconsistent with the emission of intermediate mass fragments by a single chemically equilibrated source. Comparisons with ImQMD calculations are consistent with results obtained at higher incident energies that provide constraints on the density dependence of the symmetry energy.

Z. Y. Sun; M. B. Tsang; W. G. Lynch; G. Verde; F. Amorini; L. Andronenko; M. Andronenko; G. Cardella; M. Chatterje; P. Danielewicz; E. De Filippo; P. Dinh; E. Galichet; E. Geraci; H. Hua; E. La Guidara; G. Lanzalone; H. Liu; F. Lu; S. Lukyanov; C. Maiolino; A. Pagano; S. Piantelli; M. Papa; S. Pirrone; G. Politi; F. Porto; F. Rizzo; P. Russotto; D. Santonocito; Y. X. Zhang

2010-09-09T23:59:59.000Z

Note: This page contains sample records for the topic "uut ge sn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

MEMS Relays | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

MEMS Technology 2-1-7-v-metal-mems-devices MEMS: Inside the Global Research Cleanroom 2-3-11-v Carousolar Uses Solar Power for Fun 2-2-6-v GE Scientists Demonstrate...

62

Laser Additive Manufacturing in GE  

Science Journals Connector (OSTI)

There has been an increasing interest given to laser additive manufacturing (LAM) in recent years from across the global. GE has been one of the leading industries engaging in this...

Peng, Henry; Li, Yanmin; Guo, Rui; Wu, Zhiwei

63

GE computer move in Japan  

Science Journals Connector (OSTI)

GE computer move in Japan ... General Electric is moving ahead with plans to set up a joint computer venture in Japan with Tokyo Shibaura Electric (Toshiba) and Mitsubishi Electric. ... Later, possibly in about three years, it will manufacture in Japan. ...

1967-02-06T23:59:59.000Z

64

High energy octupole resonance in Sn-116  

E-Print Network (OSTI)

~1!/72~6!/$10.00 e resonance in 116Sn , and Y.-W. Lui , College Station, Texas 77843 August 1995! V in 116Sn was studied with inelastic scattering of 240 r giant monopole resonance and the isoscalar giant . A peak exhausting ~67610!% of the E3 energy- G57....70? spectra and well above the 74 54H. L. CLARK, D. H. YOUNGBLOOD, AND Y.-W. LUI 11.460.4 0.460.1 and the BAS was not available for the data acquired in set 1 ~closed triangles!. For each state, the EWSR strengths were calculated by normalizing...

Clark, HL; Youngblood, David H.; Lui, YW.

1996-01-01T23:59:59.000Z

65

Aluminum-stabilized NB3SN superconductor  

DOE Patents (OSTI)

An aluminum-stabilized Nb.sub.3 Sn superconductor and process for producing same, utilizing ultrapure aluminum. Ductile components are co-drawn with aluminum to produce a conductor suitable for winding magnets. After winding, the conductor is heated to convert it to the brittle Nb.sub.3 Sn superconductor phase, using a temperature high enough to perform the transformation but still below the melting point of the aluminum. This results in reaction of substantially all of the niobium, while providing stabilization and react-in-place features which are beneficial in the fabrication of magnets utilizing superconducting materials.

Scanlan, Ronald M. (Livermore, CA)

1988-01-01T23:59:59.000Z

66

Kinetic study of GeO disproportionation into a GeO{sub 2}/Ge system using x-ray photoelectron spectroscopy  

SciTech Connect

GeO disproportionation into GeO{sub 2} and Ge is studied through x-ray photoelectron spectroscopy. Direct evidence for the reaction 2GeO {yields} GeO{sub 2} + Ge after annealing in ultra-high vacuum is presented. Activation energy for GeO disproportionation is found to be about 0.7 {+-} 0.2 eV through kinetic and thermodynamic calculations. A kinetic model of GeO disproportionation is established by considering oxygen transfer in the GeO network. The relationship between GeO disproportionation and GeO desorption induced by GeO{sub 2}/Ge interfacial reaction is discussed, and the apparent contradiction between GeO desorption via interfacial redox reaction and GeO disproportionation into Ge and GeO{sub 2} is explained by considering the oxygen vacancy.

Wang Shengkai [Micorowave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, 3 Bei-Tu-Cheng West Road, Beijing 100029 (China); Department of Materials Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Liu Honggang [Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, 3 Bei-Tu-Cheng West Road, Beijing 100029 (China); Toriumi, Akira [Department of Materials Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2012-08-06T23:59:59.000Z

67

GE PowerPoint Template  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Steels for Steels for Accident Tolera nt Fuel Cla ddings Ferritic Ma rtensitic Alloys a s Accident Tolera nt Fuel (ATF) Cla dding Ma teria l for Light Wa ter Rea ctors Ra ul B. Reba k, GE Globa l Resea rch DOE Integra tion Meeting, Sa lt La ke City 27-August-2013 DE NE 568 2 / GE Reba k - DOE Integra tion Meeting, Sa lt La ke City, 27-August-2013/ GE Project Tea m 3 / GE Reba k - DOE Integra tion Meeting, Sa lt La ke City, 27-August-2013/ Approa ch of GE Resea rch Proposa l * Demonstra te tha t sta inless iron ba sed bulk a lloys or Adva nced Steels ca n be used a s fuel cla dding ma teria ls in commercia l nuclea r rea ctors * The proposed ma teria l should be a s good a s Zr a lloys (or better tha n Zr a lloys) under norma l opera tion conditions 1. Resista nt to genera l corrosion a nd environmenta l cra

68

GE Teams with NY College to Pilot SOFC Technology |GE Global...  

NLE Websites -- All DOE Office Websites (Extended Search)

Hudson Valley Community College to Pilot GE Solid Oxide Fuel Cell Technology Hudson Valley Community College to Pilot GE Solid Oxide Fuel Cell Technology GE - Fuel Cells to install...

69

Cs4(In0.27Ge0.73)15Ge8  

Science Journals Connector (OSTI)

It contains the standardized crystallographic data set of Cs8In8Ge38 representing the structure type Cs4(In0.27Ge0.73)15Ge8.

P. Villars; K. Cenzual; J. Daams…

2004-01-01T23:59:59.000Z

70

Ba6(In0.36Ge0.64)11Ge14  

Science Journals Connector (OSTI)

It contains the standardized crystallographic data set of Ba6In4Ge21 representing the structure type Ba6(In0.36Ge0.64)11Ge14.

P. Villars; K. Cenzual; J. Daams…

2005-01-01T23:59:59.000Z

71

Clean Cities: National Clean Fleets Partner: GE  

NLE Websites -- All DOE Office Websites (Extended Search)

GE to GE to someone by E-mail Share Clean Cities: National Clean Fleets Partner: GE on Facebook Tweet about Clean Cities: National Clean Fleets Partner: GE on Twitter Bookmark Clean Cities: National Clean Fleets Partner: GE on Google Bookmark Clean Cities: National Clean Fleets Partner: GE on Delicious Rank Clean Cities: National Clean Fleets Partner: GE on Digg Find More places to share Clean Cities: National Clean Fleets Partner: GE on AddThis.com... Goals & Accomplishments Partnerships National Clean Fleets Partnership National Parks Initiative Electric Vehicle Infrastructure Training Program Advanced Vehicle Technology Competitions Natural Gas Transit & School Bus Users Group Natural Gas Vehicle Technology Forum Hall of Fame Contacts National Clean Fleets Partner: GE

72

PROCESSING OF HIGH-PERFORMANCE Nb{sub 3}Sn WIRES THROUGH A NEW DIFFUSION REACTION USING Sn BASED ALLOYS  

SciTech Connect

Tightly consolidated Sn-Ta and Sn-B based alloys have been prepared by the reaction among constituent metal powders at 750-775 deg. C. Sn-Ta and Sn-B based alloys exhibit quite similar microstructures. A small amount of Ti addition seems to improve the bonding between Ta or B particles and Sn matrix. Nb{sub 3}Sn wires have been fabricated by the Jelly Roll (JR) and Multi-rod (MR) process using Sn based alloy sheet and rod, respectively. Thick Nb{sub 3}Sn layers with nearly stoichiometric A15 composition are synthesized through a new diffusion mechanism between Nb and Sn based alloy. B{sub c2}(4.2 K)'s of 26.9 T (mid) and 26.5 T (mid) have been obtained in the JR and MR processed wires, respectively, using Sn-Ta based alloy. These wires exhibit enough non-Cu J{sub c} to be used above 20 T and 4.2 K. T{sub c} of JR wires using Sn-B based sheet is 18.14 K (offset) which is slightly higher than that of wires using Sn-Ta based sheet.

Tachikawa, K.; Sasaki, H.; Yamaguchi, M.; Hayashi, Y.; Nakata, K. [Faculty of Engineering, Tokai University, Hiratsuka, Kanagawa 259-1292 (Japan); Takeuchi, T. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan)

2010-04-08T23:59:59.000Z

73

GE Energy Formerly GE Power Systems | Open Energy Information  

Open Energy Info (EERE)

GE Power Systems GE Power Systems Jump to: navigation, search Name GE Energy (Formerly GE Power Systems) Place Atlanta, Georgia Zip 30339 Sector Renewable Energy, Solar, Wind energy Product Atlanta-based supplier of power generation and energy delivery technologies in all areas of the energy industry including renewable resources such as water, wind, solar and alternative fuels. Coordinates 33.748315°, -84.391109° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.748315,"lon":-84.391109,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

74

Hot Hole p-Ge Lasers and Masers for Spectroscopy of MultiQuantum-Well Heterostructures Ge/Ge1-xSix  

Science Journals Connector (OSTI)

Hot hole p-Ge masers and lasers operating in millimiter and ... of the tunable spectrometer with hote hole p-Ge emitter is demostrated by its application to ... multi-quantum-well (MQW) heterostructures (HS) Ge/Ge

V. V. Nikonorov; V. I. Gavrilenko…

1995-01-01T23:59:59.000Z

75

Fusion of radioactive $^{132}$Sn with $^{64}$Ni  

E-Print Network (OSTI)

Evaporation residue and fission cross sections of radioactive $^{132}$Sn on $^{64}$Ni were measured near the Coulomb barrier. A large sub-barrier fusion enhancement was observed. Coupled-channel calculations including inelastic excitation of the projectile and target, and neutron transfer are in good agreement with the measured fusion excitation function. When the change in nuclear size and shift in barrier height are accounted for, there is no extra fusion enhancement in $^{132}$Sn+$^{64}$Ni with respect to stable Sn+$^{64}$Ni. A systematic comparison of evaporation residue cross sections for the fusion of even $^{112-124}$Sn and $^{132}$Sn with $^{64}$Ni is presented.

J. F. Liang; D. Shapira; J. R. Beene; C. J. Gross; R. L. Varner; A. Galindo-Uribarri; J. Gomez del Campo; P. A. Hausladen; P. E. Mueller; D. W. Stracener; H. Amro; J. J. Kolata; J. D. Bierman; A. L. Caraley; K. L. Jones; Y. Larochelle; W. Loveland; D. Peterson

2007-04-05T23:59:59.000Z

76

Method for producing Nb/sub 3/Sn superconductor  

SciTech Connect

A method for producing Nb/sub 3/Sn superconductors is described which comsists of forming a composite consisting of a core portion and a sheath portion surrounding the core portion, said sheath portion being composed of a Cu-Sn alloy, and the core portion being composed of a Nb metal; elongating the composite; and heat-treating the resulting elongated composite to form an Nb/sub 3/Sn layer between the sheath and core portions; the improvement wherein the Cu-Sn alloy contains 1 to 20 atomic percent of Sn and the Nb metal is an Nb alloy containing 0.1 to 30 atomic percent of Hf.

Sekine, H.; Tachikawa, K.

1980-09-23T23:59:59.000Z

77

Ge-nanocluster formation in Ge-doped polysilicon films under oxidation and heat treatment  

Science Journals Connector (OSTI)

An experimental investigation is conducted into the formation Ge nanoclusters by heat treatment of germanosilicate-glass... x Ge y O ...

A. A. Kovalevsky; A. S. Strogova; D. V. Plyakin

2009-03-01T23:59:59.000Z

78

Method for producing Nb/sub 3/Sn superconductors  

SciTech Connect

In a method for producing a Nb/sub 3/Sn superconductor which comprises drawing a composite having a core of a Nb-Hf alloy containing 0.1 to 30 atomic % of Hf and a sheath containing Cu and Sn, and heattreating the composite to form a Nb/sub 3/Sn layer between the core and the sheath; the improvement wherein the sheath is formed of pure Cu, a Cu-Sn alloy containing not more than 6 atomic % of Sn, a Cu -Ga alloy containing not more than 20 atomic % of Ga, a Cu-Al alloy containing not more than 20 atomic % of Al, a Cu-Ga-Sn alloy containing not more than 6 atomic % of Sn and not more than 20 atomic % of Ga, or a Cu-Al-Sn alloy containing not more than atomic % of Sn and not more than 20 atomic % of Al; and after the drawing, a Sn film is coated on the surface of the sheath, and then the product having a Sn film coated thereon is heattreated.

Tachikawa, K.; Takeuchi, T.; Togano, K.

1982-07-27T23:59:59.000Z

79

Technology "Relay Race" Against Cancer | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

GE Scientists in Technology "Relay Race" Against Cancer GE Scientists in Technology "Relay Race" Against Cancer GE technologies being developed to impact every stage of cancer...

80

Crowdsourcing Software Award | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

GE Unveils High-Tech Superhero, GENIUS MAN MunichinteriorV 10 Years ON: From the Lab to the Real World in 10 Years 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom...

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While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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to obtain the most current and comprehensive results.


81

Work and Life Balance | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Achieving worklife balance is a much-talked-about topic. According to GE Healthcare's Kelly Piacsek, "GE hires people for what's inside their head-what they know-and the specific...

82

Production cross sections of tritium in high energy nuclear reactions with 12 GeV protons  

Science Journals Connector (OSTI)

Production cross sections of tritium in high energy nuclear reactions with 12 GeV protons were measured for Al, Co, Cu, Nb, Ag, In, Sn, Au and Pb targets. Large production cross sections of > 500 (mb) were obtained for Au and Pb targets. From their atomic weight dependence, tritium cross sections (?) in mb can be expressed as a function of target atomic weight (A) by the following simple equation: ?(A) = 95 exp(A107), which should be useful for predicting unknown cross sections. Together with other existing data at different energies, the present data suggest that there is no energy dependence of tritium cross section at proton energies above several GeV.

Masaharu Noguchi; Taichi Miura; Kenjiro Kondo; Takenori Suzuki; Yuichi Oki; Minoru Takasaki; Kazuhiro H. Tanaka; Masaharu Ieiri

1991-01-01T23:59:59.000Z

83

Hauptbewässerungs(ge)rinne f, (n)  

Science Journals Connector (OSTI)

Hauptbewässerungs(ge)rinne f, (n) ? supply (irrigation) channel [The main channel supplying water to the irrigation area

2013-01-01T23:59:59.000Z

84

The Spectrum of SnF  

Science Journals Connector (OSTI)

Measurements of the absorption bands of SnF are reported for the first time. Analysis of the frequencies of the band heads shows the presence of four doublet systems, all due to transitions from a doublet normal state X, of separation 2317.3 cm-1. The various states are as follows: State??exe?eProbable typeX0.0582.92.69?2 2317.3587.62.65 A34,108.4676.72.65?2B40,834594-?2C44,161.6688.24.65?2 45,498.9688.24.65 D46,326598-?2 46,427607- E?41,000---F?53,000--- The transitions E?X and F?X give continua. The second component of B?X is probably masked by E?X. Resolution of the Sn isotope effect is observed for the first time. A carbon tube furnace for studying absorption spectra is described.

F. A. Jenkins and George D. Rochester

1937-12-01T23:59:59.000Z

85

Comparison of Recent SnIa datasets  

E-Print Network (OSTI)

We rank the six latest Type Ia supernova (SnIa) datasets (Constitution (C), Union (U), ESSENCE (Davis) (E), Gold06 (G), SNLS 1yr (S) and SDSS-II (D)) in the context of the Chevalier-Polarski-Linder (CPL) parametrization $w(a)=w_0+w_1 (1-a)$, according to their Figure of Merit (FoM), their consistency with the cosmological constant ($\\Lambda$CDM), their consistency with standard rulers (Cosmic Microwave Background (CMB) and Baryon Acoustic Oscillations (BAO)) and their mutual consistency. We find a significant improvement of the FoM (defined as the inverse area of the 95.4% parameter contour) with the number of SnIa of these datasets ((C) highest FoM, (U), (G), (D), (E), (S) lowest FoM). Standard rulers (CMB+BAO) have a better FoM by about a factor of 3, compared to the highest FoM SnIa dataset (C). We also find that the ranking sequence based on consistency with $\\Lambda$CDM is identical with the corresponding ranking based on consistency with standard rulers ((S) most consistent, (D), (C), (E), (U), (G) least consistent). The ranking sequence of the datasets however changes when we consider the consistency with an expansion history corresponding to evolving dark energy $(w_0,w_1)=(-1.4,2)$ crossing the phantom divide line $w=-1$ (it is practically reversed to (G), (U), (E), (S), (D), (C)). The SALT2 and MLCS2k2 fitters are also compared and some peculiar features of the SDSS-II dataset when standardized with the MLCS2k2 fitter are pointed out. Finally, we construct a statistic to estimate the internal consistency of a collection of SnIa datasets. We find that even though there is good consistency among most samples taken from the above datasets, this consistency decreases significantly when the Gold06 (G) dataset is included in the sample.

J. C. Bueno Sanchez; S. Nesseris; L. Perivolaropoulos

2009-10-01T23:59:59.000Z

86

Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots  

SciTech Connect

The lateral photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots of various sizes are investigated. We observed optical transition lines between the hole levels of quantum dots and electronic states of Si. This enabled us to construct a detailed energy level diagram of the electron-hole spectrum of the Si/Ge structures. It is shown that the hole levels of Ge quantum dots are successfully described by the 'quantum box' model using the actual sizes of Ge islands. It I found that the position of the longwavelength photosensitivity boundary of Si/Ge structures with Ge quantum dots can be controlled by changing the growth parameters.

Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B., E-mail: igor@thermo.isp.nsc.ru [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2011-09-15T23:59:59.000Z

87

Giant resonances in Sn-112 and Sn-124: Isotopic dependence of monopole resonance energies  

E-Print Network (OSTI)

Giant resonances in 112Sn and 124Sn: Isotopic dependence of monopole resonance energies Y.-W. Lui, D. H. Youngblood, Y. Tokimoto, H. L. Clark, and B. John* Cyclotron Institute, Texas A&M University, College Station, Texas 77843, USA (Received 6... al. PHYSICAL REVIEW C 70, 014307 (2004) 014307-6 [1] J. P. Blaizot, Phys. Rep. 64, 171 (1980). [2] S. Stringari, Phys. Lett. 108, 232 (1982). [3] Y.-W. Lui, D. H. Youngblood, Y. Tokimoto, H. L. Clark, and B. John, Phys. Rev. C 69, 034611 (2004...

Lui, YW; Youngblood, David H.; Tokimoto, Y.; Clark, HL; John, B.

2004-01-01T23:59:59.000Z

88

GE Appliances and Lighting Home Energy Solutions  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE Appliances and Lighting GE Appliances and Lighting Home Energy Solutions Introduction to Devices with Brillion(tm) Technology Portfolio of Products 3 GE Appliances and Lighting All Rights Reserved Brillion(tm) Suite of Home Energy Solutions Nucleus(tm) Smart Meter Other Devices Internet IHD Other Devices PCT Non-Meter Solution GE DRMS GEA Server 4 GE Appliances and Lighting All Rights Reserved Nucleus(tm) energy manager with Brillion(tm) technology Consumers can reduce electric usage by an average of 5% per year. 5 GE Appliances and Lighting All Rights Reserved GE Profile Appliances enabled with Brillion(tm) technology Delayed defrost during peak Delayed starts and temperature adjustments during peak Delayed start until off- peak Reduced energy usage 60%, DR- enabled Reduced wattage during peak When coupled with the Nucleus and a TOU

89

Process for the manufacture of 117Sn diethylenetriaminepentaacetic acids  

DOE Patents (OSTI)

Novel methods are provided for the manufacture of .sup.117m Sn(Sn.sup.4+) DTPA. The method allows the use of DTPA, a toxic chelating agent, in an approximately 1:1 ratio to .sup.117m Sn(Sn.sup.4+) via either aqueous conditions, or using various organic solvents, such as methylene chloride. A pharmaceutical composition manufactured by the novel method is also provided, as well as methods for treatment of bone tumors and pain associated with bone cancer using the pharmaceutical composition of the invention.

Srivastava, Suresh C. (Setauket, NY); Li, Zizhong (Upton, NY); Meinken, George (Middle Island, NY)

2003-01-01T23:59:59.000Z

90

Physical properties of single crystalline BaSn{sub 5}  

SciTech Connect

We present a comprehensive study of the binary intermetallic superconductor, BaSn{sub 5}. High-quality single crystalline BaSn{sub 5} was grown out of a Sn flux. Detailed thermodynamic and transport measurements were performed to study BaSn{sub 5}'s normal and superconducting state properties. This material appears to be a strongly coupled, multiband superconductor. H{sub c2}(T) is almost isotropic. De Haas–van Alphen oscillations were observed and two effective masses were estimated from the FFT spectra. Hydrostatic pressure causes a decrease in the superconducting transition temperature at the rate of ??0.053?±?0.001?K/kbar.

Lin, Xiao; Budko, Sergey; Canfield, Paul

2012-01-30T23:59:59.000Z

91

Computational investigation of the SN2 reactivity of halogenated pollutants.  

E-Print Network (OSTI)

??The SN2 displacement reaction, in which a halide is displaced from a molecule by a nucleophile represents an important mechanism by which halogenated pollutants can… (more)

Stanford University, Dept. of Civil and Environmental; Engineering

2011-01-01T23:59:59.000Z

92

Anomalous pairing vibration in neutron-rich Sn isotopes beyond the N=82 magic number  

E-Print Network (OSTI)

Two-neutron transfer associated with the pair correlation in superfluid neutron-rich nuclei is studied with focus on low-lying $0^+$ states in Sn isotopes beyond the N=82 magic number. We describe microscopically the two-neutron addition and removal transitions by means of the Skyrme-Hartree-Fock-Bogoliubov mean-field model and the continuum quasiparticle random phase approximation formulated in the coordinate space representation. It is found that the pair transfer strength for the transitions between the ground states becomes significantly large for the isotopes with $A \\ge 140$, reflecting very small neutron separation energy and long tails of the weakly bound $3p$ orbits. In $^{132-140}$Sn, a peculiar feature of the pair transfer is seen in transitions to low-lying excited $0^+$ states. They can be regarded as a novel kind of pair vibrational mode which is characterized by an anomalously long tail of the transition density extending to far outside of the nuclear surface, and a large strength comparable to that of the ground-state transitions. The presence of the weakly bound neutron orbits plays a central role for these anomalous behaviors.

Hirotaka Shimoyama; Masayuki Matsuo

2011-06-09T23:59:59.000Z

93

Isospin diffusion and equilibration for Sn+Sn collisions at E/A=35 MeV  

SciTech Connect

Equilibration and equilibration rates have been measured by colliding Sn nuclei with different isospin asymmetries at beam energies of E/A=35 MeV. Using the yields of mirror nuclei of {sup 7}Li and {sup 7}Be, we have studied the diffusion of isospin asymmetry by combining data from asymmetric {sup 112}Sn+{sup 124}Sn and {sup 124}Sn+{sup 112}Sn collisions with those from symmetric {sup 112}Sn+{sup 112}Sn and {sup 124}Sn+{sup 124}Sn collisions. We use these measurements to probe isospin equilibration in central collisions where nucleon-nucleon collisions are strongly blocked by the Pauli exclusion principle. The results are consistent with transport theoretical calculations that predict a degree of transparency in these collisions, but inconsistent with the emission of intermediate mass fragments by a single chemically equilibrated source. Comparisons with quantum molecular dynamics calculations are consistent with results obtained at higher incident energies that provide constraints on the density dependence of the symmetry energy.

Sun, Z. Y. [National Superconducting Cyclotron Laboratory and Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824 (United States); Institute of Modern Physics, CAS, Lanzhou 730000, China, (China); Tsang, M. B.; Lynch, W. G.; Danielewicz, P. [National Superconducting Cyclotron Laboratory and Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824 (United States); Joint Institute of Nuclear Astrophysics, Michigan State University, East Lansing, Michigan 48824 (United States); Verde, G.; Cardella, G.; De Filippo, E.; Pagano, A.; Papa, M.; Pirrone, S. [INFN, Sezione di Catania (Italy); Amorini, F.; Porto, F.; Rizzo, F.; Russotto, P. [INFN, Laboratori Nazionali del Sud, Catania (Italy); Dipartimento di Fisica e Astronomia, Universita di Catania (Italy); Andronenko, L.; Andronenko, M. [National Superconducting Cyclotron Laboratory and Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824 (United States); PNPI, Gatchina, Leningrad District 188300 (Russian Federation); Chatterje, M.; Galichet, E.; Maiolino, C.; Santonocito, D. [INFN, Laboratori Nazionali del Sud, Catania (Italy)

2010-11-15T23:59:59.000Z

94

Ia(Sn2) and Id(Sn1) anation reactions of the aquapentaamminerhodium(III) ion  

Science Journals Connector (OSTI)

The anation of aquapentaamminerhodium(III) ion by HC2O 4 ? and C2O 4 2? proceeds according to an Id(Sn1) m...

R. van Eldik

1975-01-01T23:59:59.000Z

95

Giant-Resonances in Sn-112  

E-Print Network (OSTI)

PHYSICAL REVIEW C VOLUME 30, NUMBER 1 Giant resonances in "2Sn JULY 1984 Y.-W. Lui, P. Bogucki, J. D. Bronson, and D. H. Youngblood Cyclotron Institute, Texas AckM University, College Station, Texas 77843 U. Garg Physics Department, University.... Youngblood, P. Bogucki, J. D. Bronson, U. Garg, Y.-W. Lui, and C. M. Rozsa, Phys. Rev. C 23, 1997 (1981). 3D. Lebrun, M. Buenerd, P. Martin, P. de Saintignon, and G. Perrin, Phys. Lett. 97B, 358 (1980). 4U. Garg, P. Bogucki, J. D. Bronson, Y.-W. Lui, C. M...

Lui, YW; Bogucki, P.; Bronson, J. D.; Youngblood, David H.; Garg, U.

1984-01-01T23:59:59.000Z

96

Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix  

SciTech Connect

Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2011-07-15T23:59:59.000Z

97

Ge atom distribution in buried dome islands  

SciTech Connect

Laser-assisted atom probe tomography microscopy is used to provide direct and quantitative compositional measurements of tri-dimensional Ge distribution in Ge dome islands buried by Si. Sub-nanometer spatial resolution 3D imaging shows that islands keep their facets after deposition of the Si cap, and that the island/substrate/Si cap interfaces are abrupt. The core of the domes contains 55% of Ge, while the island shell exhibits a constant composition of 15% of Ge. The {l_brace}113{r_brace} facets of the islands present a Ge enrichment up to 35%. The wetting layer composition is not homogeneous, varying from 9.5% to 30% of Ge.

Portavoce, A.; Berbezier, I.; Ronda, A.; Mangelinck, D. [CNRS, IM2NP, Case 142, 13397 Marseille Cedex 20 (France); Hoummada, K. [Aix-Marseille Universite, IM2NP, Case 142, 13397 Marseille Cedex 20 (France)

2012-04-16T23:59:59.000Z

98

Microstructural evolution of eutectic Au-Sn solder joints  

SciTech Connect

Current trends toward miniaturization and the use of lead(Pb)-free solder in electronic packaging present new problems in the reliability of solder joints. This study was performed in order to understand the microstructure and microstructural evolution of small volumes of nominally eutectic Au-Sn solder joints (80Au-20Sn by weight), which gives insight into properties and reliability.

Song, Ho Geon

2002-05-31T23:59:59.000Z

99

Representing SN1 Reaction Mechanism Using the Qualitative Process Theory  

E-Print Network (OSTI)

nucleophilic substitution) and the SN2 (bimolecular nucleophilic substitution). Our intention is not to trainRepresenting SN1 Reaction Mechanism Using the Qualitative Process Theory Alicia Tang Y domain remains widely open. The application of Qualitative Process Theory (QPT) in organic reaction

Bailey-Kellogg, Chris

100

membrane-ge | netl.doe.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

High-Performance Thin Film Composite Hollow Fiber Membranes for Post-Combustion Carbon Dioxide Capture Project No.: DE-FE0007514 GE Global Research is developing high...

Note: This page contains sample records for the topic "uut ge sn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Robotic Wind Turbine Inspection | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Trials GE Global Research is advancing technology that will make the inspection of wind turbines faster and more reliable for customers. Currently, an inspector examines the...

102

Advanced Propulsion Systems | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe 2-7-7-v-laser-additive-manufacturing Revolutionizing the Age-Old Rules of Manufacturing ...

103

One Young World Summit |GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

photo of Valentina Bisio. About the Author Valentina Bisio EEDP Graduate GE O&G - Turbomachinery Solutions Valentina is an EEDP graduate. She completed job rotations in TMS...

104

Nanoscale Material Properties | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Nanotechnology Drives New Levels of Performance Nanotechnology Drives New Levels of Performance GE scientists are discovering new material properties at the nanoscale that drive...

105

Happy Pi Day! | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

is an area where GE researchers are intensifying their efforts. 3-D printing, an area of additive manufacturing, is providing new manufacturing freedom that was not possible with...

106

Patricia C. Irwin | Inventors | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

50 years as they seem now." -Patricia Irwin Creating a nonradioactive tracer for use in nuclear turbine testing. Re-establishing the dielectrics team to support GE businesses....

107

Ge/SiGe quantum well devices for light modulation, detection, and emission.  

E-Print Network (OSTI)

??This PhD thesis is devoted to study electro-optic properties of Gemanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells (MQWs) for light modulation, detection, and emission on Si platform.… (more)

Chaisakul, Papichaya

2012-01-01T23:59:59.000Z

108

Ge–Si–O phase separation and Ge nanocrystal growth in  

Science Journals Connector (OSTI)

Ge:SiOx/SiO2 multilayers are fabricated using a new reactive dc magnetron sputtering approach. The influence of the multilayer stoichiometry on the ternary Ge–Si–O phase separation and the subsequent size-controlled Ge nanocrystal formation is explored by means of x-ray absorption spectroscopy, x-ray diffraction, electron microscopy and Raman spectroscopy. The ternary system Ge–Si–O reveals complete Ge–O phase separation at 400?°C which does not differ significantly to the binary Ge–O system. Ge nanocrystals of 2 is present after annealing. Thus, the Ge nanocrystals become completely embedded in a stoichiometric silica matrix favouring the use for photovoltaic applications.

Manuel Zschintzsch; Christoph J Sahle; Johannes von Borany; Christian Sternemann; Arndt Mücklich; Alexander Nyrow; Alexander Schwamberger; Metin Tolan

2011-01-01T23:59:59.000Z

109

Hot Hole Effects in Strained Mqw Heterostructures Ge/Ge1?xSix  

Science Journals Connector (OSTI)

The paper deals with the first investigations of the 2D hot hole effects in multilayer heterostructures Ge/Ge1?xSix...aimed at the realization of dynamical heating and intraband population inversion of carriers i...

V. Ya. Aleshkin; A. A. Andronov; N. A. Bekin…

1996-01-01T23:59:59.000Z

110

Surface Properties and Collective Modes of Electron-Hole Droplets in Ge, Si and Strained Ge  

Science Journals Connector (OSTI)

The surface structure, surface energy, and dipole barrier are obtained for condensed electron-hole droplets in Ge, Si, and strained Ge at zero temperature. The surface tension is...

T. L. Reinecke; F. Crowne; S. C. Ying

1974-01-01T23:59:59.000Z

111

Ternary PtSnRhSnO2 nanoclusters: synthesis and electroactivity for ethanol oxidation fuel cell reaction  

E-Print Network (OSTI)

Ternary PtSnRh­SnO2 nanoclusters: synthesis and electroactivity for ethanol oxidation fuel cell a superior long-term activity and stability towards ethanol oxidation than the commercial Pt catalyst. Our. Ethanol becomes an attractive fuel in the fuel cell reactions compared with methanol and hydrogen, because

Frenkel, Anatoly

112

GE Turbine Parts www.edisonmachine.com  

E-Print Network (OSTI)

vehicle: Has the code for a hydrogen car been cracked? World-first working eukaryotic cell mad from get swanky with the Equus Bass770 Zenos reveals details of the E10 roadster The Toyota FCV fuel cellGE Turbine Parts www.edisonmachine.com New authentic GE and Westinghouse Turbine Parts Muscle cars

Chiao, Jung-Chih

113

Modeling of GE Appliances: Final Presentation  

SciTech Connect

This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

2013-01-31T23:59:59.000Z

114

Quadrupole collectivity in neutron-deficient Sn nuclei: 104Sn and the role of proton excitations  

Science Journals Connector (OSTI)

We report on the experimental study of quadrupole collectivity in the neutron-deficient nucleus 104Sn using intermediate-energy Coulomb excitation. The B(E2;01+?21+) value for the excitation of the first 2+ state in 104Sn has been measured to be 0.180(37)e2b2 relative to the well-known B(E2) value of 102Cd. This result disagrees by more than one sigma with a recently published measurement [G. Guastalla et al.,? Phys. Rev. Lett. 110, 172501 (2013)]. Our result indicates that the most modern many-body calculations remain unable to describe the enhanced collectivity below midshell in Sn approaching N=Z=50. We attribute the enhanced collectivity to proton particle-hole configurations beyond the necessarily limited shell-model spaces and suggest the asymmetry of the B(E2)-value trend around midshell to originate from enhanced proton excitations across Z=50 as N=Z is approached.

V. M. Bader; A. Gade; D. Weisshaar; B. A. Brown; T. Baugher; D. Bazin; J. S. Berryman; A. Ekström; M. Hjorth-Jensen; S. R. Stroberg; W. B. Walters; K. Wimmer; R. Winkler

2013-11-04T23:59:59.000Z

115

Growth and characterization of isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals  

SciTech Connect

Isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm{sup 3} volume. To our knowledge, we have grown the first {sup 70}Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be {approximately}2 {times} cm{sup {minus}3} which is two order of magnitude better that of {sup 74}Ge crystals previously grown by two different groups. Isotopic enrichment of the {sup 70}Ge and the {sup 74}Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

Itoh, K.

1992-10-01T23:59:59.000Z

116

Growth and characterization of isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals  

SciTech Connect

Isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm[sup 3] volume. To our knowledge, we have grown the first [sup 70]Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be [approximately]2 [times] cm[sup [minus]3] which is two order of magnitude better that of [sup 74]Ge crystals previously grown by two different groups. Isotopic enrichment of the [sup 70]Ge and the [sup 74]Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

Itoh, K.

1992-10-01T23:59:59.000Z

117

Ge-on-Si laser for silicon photonics  

E-Print Network (OSTI)

Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (<1x109cm-2) and point defects Ge ...

Camacho-Aguilera, Rodolfo Ernesto

2013-01-01T23:59:59.000Z

118

Science as Art: Jet Engine Airflow | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

used heavily by GE Aviation, GE Power & Water, and GE Oil & Gas for the design of turbomachinery, e.g. jet engines, gas turbines, etc. I had the chance to talk with Brian to...

119

Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al{sub 2}O{sub 3}/Ge structure  

SciTech Connect

The reaction mechanisms at Al{sub 2}O{sub 3}/Ge interfaces with thermal oxidation through the Al{sub 2}O{sub 3} layer have been investigated. X-ray photoelectron spectroscopy reveals that an Al{sub 6}Ge{sub 2}O{sub 13} layer is formed near the interface, and a GeO{sub 2} layer is formed on the Al{sub 2}O{sub 3} surface, suggesting Ge or GeO diffusion from the Ge surface. It is also clarified that the Al{sub 6}Ge{sub 2}O{sub 13} layer is formed by the different mechanism with a small activation energy of 0.2 eV, compared with the GeO{sub 2} formation limited by oxygen diffusion. Formation of Al-O-Ge bonds due to the AlGeO formation could lead appropriate interface structures with high interface qualities.

Shibayama, Shigehisa [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan) [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Kato, Kimihiko; Sakashita, Mitsuo; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)] [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2013-08-19T23:59:59.000Z

120

Engineer Receives UMass "Salute To Service" Award | GE Global...  

NLE Websites -- All DOE Office Websites (Extended Search)

GE Engineer Honored by Alma Mater With Prestigious UMass "Salute To Service" Award GE Engineer Honored by Alma Mater With Prestigious UMass "Salute To Service" Award Dr. Marshall...

Note: This page contains sample records for the topic "uut ge sn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Weak topological insulators in PbTe/SnTe superlattices  

E-Print Network (OSTI)

It is desirable to realize topological phases in artificial structures by engineering electronic band structures. In this paper we investigate (PbTe)[subscript m](SnTe)[subscript 2n?m] superlattices along the [001] direction ...

Yang, Gang

122

Alternative Mechanical Structure for LARP Nb3Sn Quadrupoles  

E-Print Network (OSTI)

2] G . Ambrosio el ai, "Mechanical performance of the L A RAlternative Mechanical Structure LARP Nb Sn Quadrupoles M .was performed for the 2-D mechanical structure. 2-D 6-node

Anerella, M.

2012-01-01T23:59:59.000Z

123

Characterization of Nb?Sn superconducting strand under pure bending  

E-Print Network (OSTI)

Characterizing the strain-dependent behavior of technological Nb?Sn superconducting strand has been an important subject of research for the past 25 years. Most of the effort has focused on understanding the uniaxial tension ...

Harris, David L., S.M. Massachusetts Institute of Technology

2005-01-01T23:59:59.000Z

124

Critical Current Metrology for Nb3Sn Conductor Development  

SciTech Connect

The research is focused on the variable temperature studies of high-performance Nb3Sn and other high-field conductors for the next-generation of HEP magnets.

Goodrich, Loren F. [NIST

2013-12-13T23:59:59.000Z

125

Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers  

SciTech Connect

Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

Hudait, Mantu K.; Zhu Yan [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-21T23:59:59.000Z

126

Sn Plasma Focus Discharge for EUV Radiation Source  

Science Journals Connector (OSTI)

A small plasma focus device was constructed for the EUV radiation experiment. The storage energy of capacitor bank is 3.4 kj and the maximum discharge current is 140 kA. Although the device was not well optimized for strong pinch EUV radiation was observed from the focus plasma. The plasma dynamics was affected by electrode material and the use of Sn electrode was proved to be effective for producing Sn plasma.

Keiichi Takasugi; Takeshi Umeda; Ena Kiuchi; Takuya Hayashi

2006-01-01T23:59:59.000Z

127

119Sn Mössbauer study of high-temperature superconductor YBa2Cu3O7?y doped with Sn  

Science Journals Connector (OSTI)

All samples were prepared at the same condition: prefired at 900°C for 10 hours in oxygen and sintered at 1000°C for 30 hour in oxygen. The zero resistance temperature decreased with increasing Sn content.

Jin Mingzhi; Li Haibo; Jin Douying; Liu Xuewu

1990-07-01T23:59:59.000Z

128

GE_Order_and_Compromise_Agreement.pdf  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE Appliances, a Division of GE Appliances, a Division of General Electric Company, Respondent ) ) ) ) ) ) ORDER By the General Counsel, U.S. Department of Energy: Case Number: 2012-SE-1403 1. In this Order, I adopt the attached Compromise Agreement entered into between the U.S. Department of Energy ("DOE") and GE Appliances, a Division of General Electric Company ("Respondent"). The Compromise Agreement resolves the case initiated after DOE was informed, based on test results made available as a result of verification testing by the Association of Home Appliance Manufacturers ("AHAM"), that aGE refrigerator basic model may not meet the energy conservation standard set forth in 10 C.F.R. § 430.32(a). 2. DOE and Respondent have negotiated the terms of the Compromise Agreement that

129

12 GeV Upgrade | Jefferson Lab  

NLE Websites -- All DOE Office Websites

Science Science A Schematic of the 12 GeV Upgrade The 12 GeV Upgrade will greatly expand the research capabilities of Jefferson Lab, adding a fourth experimental hall, upgrading existing halls and doubling the power of the lab's accelerator. A D D I T I O N A L L I N K S: 12 GeV Home Public Interest Scientific Opportunities Hall D Status Updates Contacts Three-Year Accelerator Schedule 2014 - 2016 top-right bottom-left-corner bottom-right-corner 12 GeV Upgrade Physicists at Jefferson Lab are trying to find answers to some of nature's most perplexing questions about the universe by exploring the nucleus of the atom. Their goal is to answer such questions as: "What is the universe made of?" and "What holds everyday matter together?" In their search for answers, physicists smash electrons into atoms using

130

Working in the Cleanroom | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

The Dirt on the Cleanroom The Dirt on the Cleanroom In this short video, take a look inside the GE Global Research cleanroom and meet the team working in this 28,000-square-foot...

131

Metal MEMS Devices | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

MEMS: Inside the Global Research Cleanroom MEMS: Inside the Global Research Cleanroom This follow-up to our introduction to MEMS takes you inside the GE Global Research cleanroom...

132

Adam Rasheed | Inventors | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

A GE-NASA effort that developed the world's first and largest multi-tube pulse detonation engine that fires into a large-scale turbine-along with its deafening whine and...

133

Air Traffic Operations | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Manufacturing in Europe LucasMaltaairplaneV Green Skies of Brazil 2-7-7-v-laser-additive-manufacturing Revolutionizing the Age-Old Rules of Manufacturing 3-4-4-v GE...

134

MEXICO: GE Lets Mexicans Buy In  

Science Journals Connector (OSTI)

MEXICO: GE Lets Mexicans Buy In ... General Electric de Mexico, the country's biggest manufacturer of electrical products, had been one of the major Mexican firms still wholly owned by a foreign parent. ...

1968-07-15T23:59:59.000Z

135

Andrew Gorton | Inventors | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

"My goal is to make the world a better place by reducing the amount of water used during hydraulic fracturing, as well as continue to make GE products quieter, thereby reducing...

136

GE's Christine Furstoss Named to NACIE  

NLE Websites -- All DOE Office Websites (Extended Search)

companies like GE will need workers with new and advanced skills in areas like 3D printing and virtual design. It's all about growing a new generation of workforce skills,...

137

Jie Shen | Inventors | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

GE Power Conversion in developing the novel medium-voltage drive MV6 series, from NTI (new technology introduction) to NPI (new product introduction) to product release and to...

138

Mess(ge)rinne f, (n)  

Science Journals Connector (OSTI)

Mess(ge)rinne f, (n), Messkanal m ? flume, sluice, measuring flume, measuring sluice, meter flume, measurement flume, launder, measurement sluice, meter sluice [A channel in which water i...

2013-01-01T23:59:59.000Z

139

GE Scientists Source Best Ideas at hackMIT | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

the Manufacturing Platform DirectWriteV Building More Intelligent GE Products with Additive Manufacturing MEMSVertical Next-gen RF MEMS Switch for a Smarter, Faster...

140

GE partners with Matthew Dear to create "Drop Science" | GE Global...  

NLE Websites -- All DOE Office Websites (Extended Search)

to Create "Drop Science" GE Partners with Matthew Dear to Create "Drop Science" Every machine has its own acoustic signature - a precise frequency that indicates whether that...

Note: This page contains sample records for the topic "uut ge sn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

GE Opens New Global R&D Center in Brazil - GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Center to focus on subsea oil and gas research, capitalizing on 1.2 trillion offshore market opportunity Site will include "Crotonville" GE leadership facility to help...

142

SS/NG: October `00 UCLA-UCMEP-00-31 1 Summary of Thermo-Physical Properties of Sn,  

E-Print Network (OSTI)

and therefore, thermal efficiency. However, the compatibility of Sn-Li with structural materials needs-O, Sn-Li, and Sn-C systems are reported. In Section 3 the thermal conductivity, vapor pressure-lithium (Sn-Li) as a new liquid wall coolant for handling high wall loadings. The low vapor pressure of Sn

California at Los Angeles, University of

143

Synthesis, structure, and properties of four ternary compounds: CaSrTt, Tt=Si, Ge, Sn, Pb  

SciTech Connect

The title compounds were synthesized and characterized by structural measurements and electronic structure calculations. Single-crystal X-ray diffraction analyses established that they all have the orthorhombic inverse-PbCl{sub 2}-type structure (Pnma, Z=4, a=8.108(2), 8.124(2), 8.421(2), 8.509(2)A; b=4.944(1), 4.949(1), 5.168(1), 5.189(1)A; c=9.170(2), 9.184(2), 9.685(2), 9.740(2)A, respectively). The tetrel (Tt) atoms are situated in tricapped trigonal prisms of ordered Sr and Ca atoms in which the smaller Ca atoms play a distinctive role. The structure is distinguishable from the Co{sub 2}Si type by its more nearly ideal 6+3 (TCTP) environment about Tt rather than a higher coordination by cations. Other representations of the two structural types are also considered. Electronic band structure calculations suggest that the compounds are semiconductors, in agreement with literature data on their Ae{sub 2}Tt analogues.

Liu Shengfeng [Ames Laboratory, Department of Chemistry, Iowa State University, Ames, Iowa 50010 (United States); Corbett, John D. [Ames Laboratory, Department of Chemistry, Iowa State University, Ames, Iowa 50010 (United States)]. E-mail: jcorbett@iastate.edu

2006-03-15T23:59:59.000Z

144

Relaxation and recombination processes in Ge/SiGe multiple quantum wells  

SciTech Connect

The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at ? is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed.

Gatti, E., E-mail: gatti@mater.unimib.it; Giorgioni, A., E-mail: gatti@mater.unimib.it; Grilli, E., E-mail: gatti@mater.unimib.it; Guzzi, M., E-mail: gatti@mater.unimib.it [L-NESS and Università di Milano-Bicocca, Dip. di Scienza dei Materiali, via Cozzi 53, 20125 Milano (Italy); Chrastina, D.; Isella, G. [L-NESS and Politecnico di Milano, Dip. di Fisica, via Anzani 42, 22100 Como (Italy); Chernikov, A.; Kolata, K.; Bornwasser, V.; Köster, N. S.; Woscholski, R.; Chatterjee, S. [Faculty of Physics and Materials Sciences Center, Philipps-Universität, Renthof 5, 35032 Marburg (Germany)

2013-12-04T23:59:59.000Z

145

Kohlenstoffhaltige ternäre Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C)  

Science Journals Connector (OSTI)

Die ternären Phasen V2GeC, Cr2GaC und Cr2GeC werden aus den Komponenten hergestellt und als H-Phasen identifiziert. Ferner dürften auch die H-Phasen Ti2GaC, und Ti2GeC existieren. In gleicher Weise hergestellte L...

W. Jeitschko; H. Nowotny; F. Benesovsky

1963-01-01T23:59:59.000Z

146

Influence of C on Ge incorporation in the growth of Ge-rich Ge1?x?ySixCy alloys on Si (100)  

Science Journals Connector (OSTI)

Ge-rich Ge1?x?ySixCy...alloys have been grown on Si (100) substrates by plasma-enhanced rapid thermal chemical vapor deposition. It is found that there is a strong suppressive effect of C on the Ge composition an...

X.B. Liu; L. Zang; S.M. Zhu; X.M. Cheng; P. Han; Z.Y. Luo; Y.D. Zheng

2000-04-01T23:59:59.000Z

147

New York–Presbyterian and GE  

Science Journals Connector (OSTI)

...originate. Our collaboration with GE Medical Systems is based on having access to business skills and cutting-edge equipment that, in our judgment, will benefit our patients and increase our ability to provide cost-effective, high-quality care. We purchase from GE only technology that the hospital deems... To the Editor: In his Perspective article, Dr. Garber (Oct. 14 issue)1 appropriately alerts us to the potential for conflicts of interest when an academic medical center forms a relationship with a business company. New York–Presbyterian Hospital is very ...

2005-02-03T23:59:59.000Z

148

The GRB-SN connection: GRB030329 and XRF030723  

E-Print Network (OSTI)

The attempt to secure conclusive, spectroscopic evidence for the GRB/SN connection has been a central theme in most GRB observing time proposals since the discovery of the very unusual GRB980425 associated with the peculiar type Ib/c SN1998bw. GRB030329 provided this evidence to everybody's satisfaction. In this contribution we show the results of a spectroscopic campaign of the supernova associated with GRB030329 carried out at ESOs Very Large Telescope. We also present preliminary results from a photometric and spectroscopic campaign targeting the X-ray Flash of July 23.

J. P. U. Fynbo; J. Hjorth; J. Sollerman; P. Moller; J. Gorosabel; S. Guziy; S. Woosley; C. Kouveliotou; F. Grundahl; B. L. Jensen; M. I. Andersen; P. Vreeswijk; A. J. Castro-Tirado; the GRACE collaboration

2004-02-11T23:59:59.000Z

149

Method for producing Nb/sub 3/Sn superconductors  

SciTech Connect

In a method for producing an nb3sn superconductor which comprises elongating a composite composed of a core portion of an alloy containing niobium and a matrix portion of a copper-tin alloy, a copper-tin-aluminum alloy or a copper-tin-gallium alloy and heat-treating the elongated composite to form an nb3sn layer between the core portion and the matrix portion; the improvement wherein the core portion of the composite is made of a niobiumtitanium alloy containing 0.1 to 10 atomic percent of titanium.

Asano, T.; Tachikawa, K.; Takeuchi, T.

1983-05-31T23:59:59.000Z

150

Process for producing Nb/sub 3/Sn superconducting wires  

SciTech Connect

A process for producing a Nb/sub 3/Sn superconducting wire, which comprises preparing a composite from a copper alloy material containing 0.1 to 5 atomic percent in total of at least one element of Group IV of the periodic table selected from titanium, zirconium and hafnium, a tin material and a niobium material, processing the composite into a wire, tape or tube, and heat-treating the processed composite at a temperature of 400/sup 0/ to 900/sup 0/ C. to form a Nb/sub 3/Sn compound.

Tachikawa, K.; Yoshida, S.

1984-03-06T23:59:59.000Z

151

Hydrothermal synthesis and infrared emissivity property of flower-like SnO{sub 2} particles  

SciTech Connect

The flower-like SnO{sub 2} particles are synthesized through a simple hydrothermal process. The microstructure, morphology and the infrared emissivity property of the as-prepared products are characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscope (TEM), and infrared spectroradio meter (ISM) respectively. The results show that the as-prepared SnO{sub 2} products are all indexed to tetragonal cassiterite phase of SnO{sub 2}. The different molarity ratios of the OH{sup ?} concentration to Sn{sup 4+} concentration ([OH{sup ?}]:[Sn{sup 4+}]) and the polyacrylamide (PAM) lead to the different morphological structures of SnO{sub 2}, which indicates that both the [OH{sup ?}]:[Sn{sup 4+}] and the PAM play an important role in the morphological evolution respectively. The infrared emissivities of the as-prepared SnO{sub 2} products are discussed.

Tian, J. X. [Institute of Photonics and Photon-Technology, Northwest University, Xi'an 710069 (China) [Institute of Photonics and Photon-Technology, Northwest University, Xi'an 710069 (China); Beijing Institute of Environmental Features, Beijing, 100854 (China); Zhang, Z. Y., E-mail: zhangzy@nwu.edu.cn [Institute of Photonics and Photon-Technology, Northwest University, Xi'an 710069 (China); School of Information Science and Technology, Northwest University, Xi'an 710127 (China); Yan, J. F.; Ruan, X. F.; Yun, J. N.; Zhao, W.; Zhai, C. X. [School of Information Science and Technology, Northwest University, Xi'an 710127 (China)] [School of Information Science and Technology, Northwest University, Xi'an 710127 (China)

2014-04-15T23:59:59.000Z

152

Alpha Emission Near 100Sn and the Termination of the rp Process  

NLE Websites -- All DOE Office Websites (Extended Search)

Alpha Emission Near 100 Sn and the Termination of the rp Process The astrophysical rp-process is thought to reach a termination point in the region of 100 Sn, via the...

153

Pt–Sn/C as a Possible Methanol-Tolerant Cathode Catalyst for DMFC  

Science Journals Connector (OSTI)

An effective method was developed for preparing highly dispersed nano-sized Pt–Sn/C electrocatalyst synthesised by a modified polyol reduction method. From XRD patterns, the Pt–Sn/C peaks shifted slightly to l...

Lynwill G. Martin; Ivan Green; X. Wang; Sivakumar Pasupathi…

2013-09-01T23:59:59.000Z

154

Decolorization of methylene blue by Ag/SrSnO3 composites under ultraviolet radiation  

Science Journals Connector (OSTI)

SrSn(OH)6 precursors synthesized by a cyclic microwave radiation (CMR) process were calcined at 900°C for 3h to form rodlike SrSnO3. Further, the rod-like SrSnO3 and AgNO3 in ethylene glycol (EG) were ...

Patcharanan Junploy, Titipun Thongtem, Somchai Thongtem, Anukorn Phuruangrat

2014-01-01T23:59:59.000Z

155

Time-resolved study of the symmetric SN2-reaction I Roland Wester,a)  

E-Print Network (OSTI)

Time-resolved study of the symmetric SN2-reaction I� ¿CH3I Roland Wester,a) Arthur E. Bragg, Alison of negative ions has been applied to study the title reaction as a model system for gas phase SN2 reactions dynamics are expected for entrance channel complex formed in the first step of a gas phase SN2 reaction

Neumark, Daniel M.

156

Chemistry Inside Carbon Nanotubes: the Menshutkin SN2 Reaction Mathew D. Halls and H. Bernhard Schlegel*  

E-Print Network (OSTI)

Chemistry Inside Carbon Nanotubes: the Menshutkin SN2 Reaction Mathew D. Halls and H. Bernhard theory have been carried out for the Menshutkin SN2 reaction in gas phase and inside carbon nanotubes energy and reaction endothermicity for the Menshutkin SN2 reaction are significantly reduced compared

Schlegel, H. Bernhard

157

GE Hitachi Nuclear Energy | Open Energy Information  

Open Energy Info (EERE)

GE Hitachi Nuclear Energy GE Hitachi Nuclear Energy Jump to: navigation, search Name GE Hitachi Nuclear Energy Place Wilmington, North Carolina Zip 28402 Sector Efficiency, Services Product GE Hitachi Nuclear Energy develops advanced light water reactors and offers products and services used by operators of boiling water reactor (BWR) nuclear power plants to improve efficiency and boost output. Coordinates 42.866922°, -72.868494° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.866922,"lon":-72.868494,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

158

Viscosity Measurement G.E. Leblanc  

E-Print Network (OSTI)

30 Viscosity Measurement G.E. Leblanc McMaster University R.A. Secco The University of Western Ontario 30.1 Shear Viscosity ............................................................. 30-l Newtonian and Non-Newtonian Fluids l Dimensions and Units of Viscosity l Viscometer Types l Capillary M. Kostic

Kostic, Milivoje M.

159

Optical Photometry of SN 1993J: Years 1995 to 2003  

E-Print Network (OSTI)

In this paper, the late-time optical photometry of supernova (SN) 1993J in M81 from Feburary 1995 to Janurary 2003 is presented. The observations were performed in a set of intermediate-band filters that have the advantage of tracing the strength variations of some spectral features. SN 1993J was found to fade very slowly at late times, declining only by $0.05\\pm0.02$ mag 100 d$^{-1}$ in most of the filters from 2 to nearly 10 yrs after discovery. Our data suggest that the circumstellar interaction provides most of the energy to power the late-time optical emission of SN 1993J. This is manifested by several flux peaks seen in the rough spectral energy distributions constructed from the multicolor light curves. The flux peaks near 6600 \\AA, 5800 \\AA{} and 4900 \\AA{} may correspond to the emission lines of H$\\alpha$, Na I D + He I $\\lambda$5876 and [O III] $\\lambda\\lambda$4959, 5007, respectively. The evolution of these emission lines suggest a power-law SN density model as proposed by \\citet{cf94}.

Zhang, T; Zhou, X; Li, W; Ma, J; Jiang, Z; Li, Z; Zhang, Tianmeng; Wang, Xiaofeng; Zhou, Xu; Li, Weidong; Ma, Jun; Jiang, Zhaoji; Li, Zongwei

2004-01-01T23:59:59.000Z

160

Magnetic instabilities in Nb3Sn strands and cables  

SciTech Connect

This paper describes a model for calculation of magnetic instabilities in superconducting wires with transport current and reports results of instability simulations in Nb{sub 3}Sn strands from different manufactures. The effect of magnetic instabilities on the strand and cable performance is presented and a criterion for the maximum effective sub-element size of strands for high field magnets is formulated.

Kashikhim, Vadim V.; Zlobin, Alexander V.; /Fermilab

2004-11-01T23:59:59.000Z

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161

STATEMENT OF CONSIDERATIONS REQUEST BY GE CORPORATE RESEARCH & DEVELOPMENT (GE-CRD)  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

CORPORATE RESEARCH & DEVELOPMENT (GE-CRD) CORPORATE RESEARCH & DEVELOPMENT (GE-CRD) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER DOE COOPERATIVE AGREEMENT NO. DE-FC07- 96ID13406; W(A)-96-004; CH-0894 The Petitioner, GE Corporate Research & Development (GE-CRD) has requested a waiver of domestic and foreign patent rights for all subject inventions arising from its participation under the above referenced cooperative agreement entitled "Electric Vehicle Program - Ultracapacitor/Battery Electronic Interface Project." The objective of the cooperative agreement is to develop prototype electronic interface hardware to verify the design of the power electronics and basic control strategy for an advanced electric vehicle drive line that uses ultracapacitors to load level the main storage battery. The

162

Defect luminescence in films containing Ge and GeO{sub 2} nanocrystals  

SciTech Connect

Amorphous SiO{sub x} alloys containing Ge or GeO{sub 2} nanocrystals are produced by dc-magnetron sputtering and controlled crystallization. The samples are investigated by Raman scattering, transmission electron microscopy, photoluminescence and excitation spectroscopy. Under UV excitation, both types of films luminesce around 3.1 eV, with identical PL line shapes and subnanosecond PL dynamics. The strongest PL intensity is found for the films containing FeO{sub 2} crystals and for the largest nanocrystals. These results are a clear indication that although the blue luminescence is without a doubt correlated with the formation of Ge (or GeO{sub 2}) nanocrystals, it is not produced by the radiative recombination of excitons confined in the nanocrystals. Possible mechanisms for the luminescence are discussed, including defects at the nanocrystal/matric interface or in the matrix itself.

Zacharias, M.; Atherton, S.J.; Fauchet, P.M.

1997-07-01T23:59:59.000Z

163

Silicon Carbides in the Cleanroom | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Clean Room: Silicon Carbides GE Global Research is working on nanoscale silicon carbide devices. Find out what we're doing. You Might Also Like 2-1-10-v-working-at-ge-resear...

164

The Majorana Ge-76 double-beta decay project  

SciTech Connect

The MAJORANA Project is a research and development activity set up to establish the feasibility and cost of a doublebetadecay experiment comprising a one-ton array of Ge detectors fabricated from germanium enriched to about 86% in Ge-76.

Avignone, Frank Titus [ORNL

2010-01-01T23:59:59.000Z

165

Conservation of bond lengths in strained Ge-Si layers  

Science Journals Connector (OSTI)

The combined techniques of x-ray-absorption fine structure and x-ray diffraction have been used to study the strain and bond distortions in epitaxial Ge-Si on Si(001). In a 31% Ge, 340-Å pseudomorphic Ge-Si film, the Ge-Ge and Ge-Si first-neighbor bond lengths have been found to be 2.44±0.02 and 2.38±0.02 Å, respectively. The lattice parameter perpendicular to the Ge-Si/Si(001) interface has been found to be a?=5.552±0.002 Å, in agreement with the predictions of macroscopic elastic theory. These results show that the bond-length strain in the epitaxial layer appears in the second and higher coordination shells, rather than in the nearest-neighbor bond lengths, which remain the same as in unstrained Ge-Si. A microscopic model is presented that accounts for these findings.

J. C. Woicik; C. E. Bouldin; M. I. Bell; J. O. Cross; D. J. Tweet; B. D. Swanson; T. M. Zhang; L. B. Sorensen; C. A. King; J. L. Hoyt; P. Pianetta; J. F. Gibbons

1991-01-15T23:59:59.000Z

166

Tailoring the spin polarization in Ge/SiGe multiple quantum wells  

SciTech Connect

We performed spin-resolved photoluminescence measurements on Ge/SiGe multiple quantum wells with different well thickness and using different exciting power densities. The polarization of the direct emission strongly depends on the relative weight of electrons photoexcited from the light and the heavy hole subbands. The study of the polarization as a function of the exciting power highlights the role of the carrier-carrier interactions in determining spin depolarization.

Giorgioni, Anna; Pezzoli, Fabio; Gatti, Eleonora; Grilli, Emanuele; Guzzi, Mario [LNESS-Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, I-20125 Milano (Italy); Bottegoni, Federico; Cecchi, Stefano; Ciccacci, Franco; Isella, Giovanni [LNESS-Dipartimento di Fisica, Politecnico di Milano, I-20133 Milano (Italy); Trivedi, Dhara; Song, Yang [Department of Physics and Astronomy, University of Rochester, Rochester (United States); Li, Pengki [Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States); Dery, Hanan [Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627 and Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States)

2013-12-04T23:59:59.000Z

167

Search for $?^+$EC and ECEC processes in $^{112}$Sn and $?^-?^-$ decay of $^{124}$Sn to the excited states of $^{124}$Te  

E-Print Network (OSTI)

Limits on $\\beta^+$EC and ECEC processes in $^{112}$Sn and on $\\beta^-\\beta^-$ decay of $^{124}$Sn to the excited states of $^{124}$Te have been obtained using a 380 cm$^3$ HPGe detector and an external source consisting of natural tin. A limit with 90% C.L. on the $^{112}$Sn half-life of $0.92\\times 10^{20}$ y for the ECEC(0$\

A. S. Barabash; Ph. Hubert; A. Nachab; S. I. Konovalov; I. A. Vanyushin; V. I. Umatov

2008-04-24T23:59:59.000Z

168

Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*  

E-Print Network (OSTI)

Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga* , Mike Morsea , Mario J. Panicciaa , Moshe, Charlottesville, VA 22904, USA Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes. Research on the Ge/Si photodiodes, one of the fundamental components needed for building integrated silicon

Bowers, John

169

Discussion on the Low Temperature Magnetothermal Conductivity in Lightly Doped Ge(Sb) and Ge(As)  

Science Journals Connector (OSTI)

Some time ago we reported1) measurements of magnetothermal conductivity in n-type Ge in the temperature range 1.3?T?...1): For Ge(Sb) with the field Bll ...o, is negative, increases in magnitude approximatel...

Leif Halbo

1976-01-01T23:59:59.000Z

170

Ferromagnetic Mn5Ge3C0.8 contacts on Ge: work function and specific contact resistivity  

Science Journals Connector (OSTI)

We report on the study of the electrical and magnetic properties of Mn5Ge3C0.8 contacts deposited on highly doped n-Ge (1?0?0) as a potentially complementary metal–oxide–semiconductor (CMOS)-compatible material system for spin injection into Ge. Mn5Ge3C0.8 is a ferromagnet with a Curie temperature of 445 K and with a resistivity that is comparable to highly doped Ge. We extract the work function of Mn5Ge3C0.8 from metal–oxide–semiconductor capacitance measurements and obtain a specific contact resistivity rC = 5.0 ? cm2 from transmission-line measurements. We discuss possible origins of the large specific contact resistivity of Mn5Ge3C0.8 on Ge.

I A Fischer; J Gebauer; E Rolseth; P Winkel; L-T Chang; K L Wang; C Sürgers; J Schulze

2013-01-01T23:59:59.000Z

171

Detection of the Sn(III) Intermediate and the Mechanism of the Sn(IV)/Sn(II) Electroreduction Reaction in Bromide Media by Cyclic Voltammetry and Scanning Electrochemical Microscopy  

Science Journals Connector (OSTI)

This work was motivated by the desire to develop a new tin–bromine redox flow battery (RFB) which is based on Sn(IV)/Sn(II) as the anolyte and Br–/Br2 as the catholyte. ... Progress in Flow Battery Research and Development ... A review of the various redox-flow battery systems and their hybrid alternatives. ...

Jinho Chang; Allen J. Bard

2013-12-13T23:59:59.000Z

172

Reactions of r-Nucleophiles with Alkyl Chlorides: Competition between SN2 and E2 Mechanisms and the  

E-Print Network (OSTI)

Reactions of r-Nucleophiles with Alkyl Chlorides: Competition between SN2 and E2 Mechanisms (SN2) and base-induced elimination (E2). As the extent of substitution in the neutral reactants through a traditional SN2 transition state, followed by an elimination step in the SN2 product ion

Lineberger, W. Carl

173

GE Wind Energy Germany | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Jump to: navigation, search Name GE Wind Energy Germany Place Salzbergen, Germany Zip 48499 Sector Wind energy Product Germany-based, division of GE Wind Energy wind turbine manufacturer and supplier. Coordinates 52.323136°, 7.347278° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":52.323136,"lon":7.347278,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

174

Stable, free-standing Ge nanocrystals  

SciTech Connect

Free-standing Ge nanocrystals that are stable under ambient conditions have been synthesized in a two-step process. First, nanocrystals with a mean diameter of 5 nm are grown in amorphous SiO{sub 2} by ion implantation followed by thermal annealing. The oxide matrix is then removed by selective etching in diluted HF to obtain free-standing nanocrystals on a Si wafer. After etching, nanocrystals are retained on the surface and the size distribution is not significantly altered. Free-standing nanocrystals are stable under ambient atmospheric conditions, suggesting formation of a self-limiting native oxide layer. For free-standing as opposed to embedded Ge nanocrystals, an additional amorphous-like contribution to the Raman spectrum is observed and is assigned to surface reconstruction-induced disordering of near-surface atoms.

Sharp, I.D.; Xu, Q.; Liao, C.Y.; Yi, D.O.; Beeman, J.W.; Liliental-Weber, Z.; Yu, K.M.; Zakharov, D.N.; Ager III, J.W.; Chrzan,D.C.; Haller, E.E.

2005-01-28T23:59:59.000Z

175

Fabrication of multifilamentary Nb/sub 3/(Al,Ge) wires through a modified jelly roll process  

SciTech Connect

Recently, development of Nb/sub 3/Al multifilamentary wires has gained much interests since high-field performance superior to that of Nb/sub 3/Sn can be expected in these wires. In this study, Nb/Al-Ge alloy composites were fabricated into multifilamentary wires through a modified jelly roll (MJR) process. A Nb mesh sheet produced at the Teledyne Wah Chang Co. was used as Nb component. An Al-Ge alloy prepared by a conventional casting process was forged and rolled into a sheet of 0.2 mm in thickness. The Nb/Al-Ge composite was prepared by wrapping the Nb mesh sheet together with the Al-Ge alloy sheet around a Nb core into a jelly roll form. The MJR composite was encased in a Cu-Ni alloy tube of which outer diameter was 43 mm. The resulting composite was hydrostatically pressed and extruded into a rod of 18 mm in diameter. A Nb barrier was then inserted between the MJR and the Cu-Ni jacket. The composite rod was swaged and drawn into a wire without any intermediate annealing. The wire was able to be drawn down to a very small diameter of 0.1 mm. The cross-sectional configuration of the MJR composite was not much disturbed by the fabrication. Superconducting transition temperature Tc of the wire, after different heat treatment including a rapid quenching from high temperatures by a continuous electron beam irradiation, was studied, and an onset Tc of 19.3K has been achieved.

Tachikawa, K.; Kamisada, Y.; Suzuki, E.

1989-03-01T23:59:59.000Z

176

Role of nucleation sites on the formation of nanoporous Ge  

SciTech Connect

The role of nucleation sites on the formation of nanoporous Ge was investigated. Three Ge films with different spherical or columnar pore morphologies to act as inherent nucleation sites were sputtered on (001) Ge. Samples were implanted 90 Degree-Sign from incidence at 300 keV with fluences ranging from 3.0 Multiplication-Sign 10{sup 15} to 3.0 Multiplication-Sign 10{sup 16} Ge{sup +}/cm{sup 2}. Electron microscopy investigations revealed varying thresholds for nanoporous Ge formation and exhibited a stark difference in the evolution of the Ge layers based on the microstructure of the initial film. The results suggest that the presence of inherent nucleation sites significantly alters the onset and evolution of nanoporous Ge.

Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States); Elliman, R. G. [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

2012-09-24T23:59:59.000Z

177

Low-energy electric dipole response in 120Sn  

E-Print Network (OSTI)

Electric dipole strength in 120Sn below the neutron threshold has been extracted from proton inelastic scattering experiments at E_p = 295 MeV and at forward angles including 0 degree. The strength distribution is very different from the results of a 120Sn(gamma,gamma') experiment and peaks at an excitation energy of 8.3 MeV. The total strength corresponds to 2.3(2)% of the energy-weighted sum rule and is more than three times larger than what is observed with the (gamma,gamma') reaction. This implies a strong fragmentation of the E1 strength and/or small ground state branching ratios of the excited 1- states.

Krumbholz, A M; Hashimoto, T; Tamii, A; Adachi, T; Bertulani, C A; Fujita, H; Fujita, Y; Ganioglu, E; Hatanaka, K; Iwamoto, C; Kawabata, T; Khai, N T; Krugmann, A; Martin, D; Matsubara, H; Neveling, R; Okamura, H; Ong, H J; Poltoratska, I; Ponomarev, V Yu; Richter, A; Sakaguchi, H; Shimbara, Y; Shimizu, Y; Simonis, J; Smit, F D; Susoy, G; Thies, J H; Suzuki, T; Yosoi, M; Zenihiro, J

2015-01-01T23:59:59.000Z

178

The Structure of the Circumstellar Envelope of SN 1987A  

E-Print Network (OSTI)

The volume around the SN 1987A contains a variety of structures, not just the three rings glowing in recombination lines. Many of these are revealed by light echoes, so are mapped in three dimensions by our optical imaging of the SN environs. The rings reside in a bipolar nebula containing them at its waist and crowns, and which is itself contained in a larger, diffuse nebula with a detectable equatorial overdensity. This diffuse nebula terminates in a denser wall which likely marks the inner edge of a bubble blown by the progenitor's main sequence wind. Along with mapping these structures, we measure spectroscopically the velocity of the gas, revealing, for instance, kinematic ages for the inner and outer rings in close agreement with each other. The presence of these structures, their ages and morphologies must be included in models explaining the evolution of the progenitor star and its mass loss envelope.

Arlin P. S. Crotts

1999-10-29T23:59:59.000Z

179

Process for producing NB/sub 3/SN superconductor  

SciTech Connect

A process is disclosed for producing at least one Nb/sub 3/Sn superconductor which comprises drawing a composite composed of a core of niobium or a niobium alloy and a matrix of a copper-tin alloy and subjecting the drawn composite to reactive heat-treatment, thereby forming a layer of Nb/sub 3/Sn between the core and the matrix; the improvement wherein the copper-tin alloy contains 1 to 15 atomic percent of tin, and 0.1 to 8 atomic percent in total of at least one element selected from 0.1 to 8 atomic percent of titanium, 0.1 to 5 atomic percent of zirconium and 0.1 to 5 atomic percent of hafnium.

Tachikawa, K.; Iijima, Y.; Itoh, K.; Sekine, H.

1983-12-06T23:59:59.000Z

180

High-field Nb{sub 3}Sn superconductors prepared through a new route  

SciTech Connect

Nb{sub 3}Sn superconductors have been prepared through Nb{sub 6}Sn{sub 5} compound powder synthesized by a melt diffusion process from Nb and Sn powders. The Nb{sub 6}Sn{sub 5} powder was mixed with Nb powder in a ball mill. The resulting mixed powder was encased in a Ta tube, and fabricated into a tape. The mechanical mixing of Nb{sub 6}Sn{sub 5} and Nb powder promotes the formation of A15 Nb{sub 3}Sn phase in the subsequent heat treatment, and improves superconducting performance. The Nb{sub 3}Sn tape shows an upper critical field B{sub c2} of nearly 25T at 4.2K after the reaction at 900{degrees}C. The B{sub c2} is still increased by Ti doping. A small amount of Cu addition decreases the optimum reaction temperature to 850{degrees}C. Present Nb{sub 3}Sn specimen exhibits considerably larger normal state resistivity than that of bronze-processed Nb{sub 3}Sn, which may be the origin of enhanced B{sub c2} in the present Nb{sub 3}Sn specimen.

Tachikawa, K.; Natsuume, M.; Tomori, H.; Kuroda, Y. [Tokai Univ., Kanagawa (Japan)] [and others

1997-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "uut ge sn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Gamma-ray lines from SN2014J  

E-Print Network (OSTI)

On 21 January 2014, SN2014J was discovered in M82 and found to be the closest type Ia supernova (SN Ia) in the last four decades. INTEGRAL observed SN2014J from the end of January until late June for a total exposure time of about 7 Ms. SNe Ia light curves are understood to be powered by the radioactive decay of iron peak elements of which $^{56}$Ni is dominantly synthesized during the thermonuclear disruption of a CO white dwarf (WD). The measurement of $\\gamma$-ray lines from the decay chain $^{56}$Ni$\\rightarrow$$^{56}$Co$\\rightarrow$$^{56}$Fe provides unique information about the explosion in supernovae. Canonical models assume $^{56}$Ni buried deeply in the supernova cloud, absorbing most of the early $\\gamma$-rays, and only the consecutive decay of $^{56}$Co should become directly observable through the overlaying material several weeks after the explosion when the supernova envelope dilutes as it expands. Surprisingly, with the spectrometer on INTEGRAL, SPI, we detected $^{56}$Ni $\\gamma$-ray lines at ...

Siegert, Thomas

2015-01-01T23:59:59.000Z

182

The Late-Time Radio Spectrum of SN1993J  

E-Print Network (OSTI)

We present VLA radio continuum measurements of SN1993J in M81 at the frequencies of 0.32 (P-band), 1.3 and 1.7 (L-band), 4.9 (C-band), 8.5 (X-band), and 14.9 (U-band) GHz carried out on December 17 and 21, 2000, about 2820 days after the supernova explosion. We find that a power-law spectrum, free-free absorbed by an homogeneous, or clumpy, distribution of ionized gas yields the best fit to the radio data. A combined homogeneous-clumpy model is not favored, but neither totally excluded. This result contrasts with the modeling of the early ($t \\lessim $230 days) radio emission from SN1993J, where a mixture of homogeneous and clumpy absorbers appeared to be necessary to adequately describe the behavior of the light curves. The radio spectrum of supernova SN1993J between 0.32 and 14.9 GHz is well characterized by $\\alpha = -0.67 \\pm 0.02 $ ($S_\

M. A. Perez-Torres; A. Alberdi; J. M. Marcaide

2002-05-14T23:59:59.000Z

183

Beta-delayed proton emission in the 100Sn region  

E-Print Network (OSTI)

Beta-delayed proton emission from nuclides in the neighborhood of 100Sn was studied at the National Superconducting Cyclotron Laboratory. The nuclei were produced by fragmentation of a 120 MeV/nucleon 112Sn primary beam on a Be target. Beam purification was provided by the A1900 Fragment Separator and the Radio Frequency Fragment Separator. The fragments of interest were identified and their decay was studied with the NSCL Beta Counting System (BCS) in conjunction with the Segmented Germanium Array (SeGA). The nuclei 96Cd, 98Ing, 98Inm and 99In were identified as beta-delayed proton emitters, with branching ratios bp = 5.5(40)%, 5.5+3 -2%, 19(2)% and 0.9(4)%, respectively. The bp for 89Ru, 91,92Rh, 93Pd and 95Ag were deduced for the first time with bp = 3+1.9 -1.7%, 1.3(5)%, 1.9(1)%, 7.5(5)% and 2.5(3)%, respectively. The bp = 22(1)% for 101Sn was deduced with higher precision than previously reported. The impact of the newly measured bp values on the composition of the type-I X-ray burst ashes was studied.

Lorusso, G; Amthor, A; Baumann, T; Bazin, D; Berryman, J S; Brown, B A; Cyburt, R H; Crawford, H L; Estrade, A; Gade, A; Ginter, T; Guess, C J; Hausmann, M; Hitt, G W; Mantica, P F; Matos, M; Meharchand, R; Minamisono, K; Montes, F; Perdikakis, G; Pereira, J; Portillo, M; Schatz, H; Smith, K; Stoker, J; Stolz, A; Zegers, R G T

2012-01-01T23:59:59.000Z

184

Low-energy dipole strength in 112,120Sn  

E-Print Network (OSTI)

The 112,120Sn(gamma,gamma') reactions below the neutron separation energies have been studied at the superconducting Darmstadt electron linear accelerator S-DALINAC for different endpoint energies of the incident bremsstrahlung spectrum. Dipole strength distributions are extracted for 112Sn up to 9.5 MeV and for 120Sn up to 9.1 MeV. A concentration of dipole excitations is observed between 5 and 8 MeV in both nuclei. Missing strength due to unobserved decays to excited states is estimated in a statistical model. A fluctuation analysis is applied to the photon scattering spectra to extract the amount of the unresolved strength hidden in background due to fragmentation. The strength distributions are discussed within different model approaches such as the quasiparticle-phonon model and the relativistic time blocking approximation allowing for an inclusion of complex configurations beyond the initial particle-hole states. While a satisfactory description of the fragmentation can be achieved for sufficently large model spaces, the predicted centroids and total electric dipole strengths for stable tin isotopes strongly depend on the assumptions about the underlying mean field.

B. Özel-Tashenov; J. Enders; H. Lenske; A. M. Krumbholz; E. Litvinova; P. von Neumann-Cosel; I. Poltoratska; A. Richter; G. Rusev; D. Savran; N. Tsoneva

2014-07-21T23:59:59.000Z

185

Suppression of Ge-O And Ge-N Bonding at Ge-HfO(2) And Ge-TiO(2) Interfaces By Deposition Onto Plasma-Nitrided Passivated Ge Substrates: Integration Issues Ge Gate Stacks Into Advanced Devices  

SciTech Connect

A study of changes in nano-scale morphology of thin films of nano-crystalline transition metal (TM) elemental oxides, HfO{sub 2} and TiO{sub 2}, on plasma-nitrided Ge(100) substrates, and Si(100) substrates with ultra-thin (-0.8 nm) plasma-nitrided Si suboxide, SiO{sub x}, x < 2, or SiON interfacial layers is presented. Near edge X-ray absorption spectroscopy (NEXAS) has been used to determine nano-scale morphology of these films by Jahn-Teller distortion removal of band edge d-state degeneracies. These results identify a new and novel application for NEXAS based on the resonant character of the respective O K{sub 1} and N K{sub 1} edge absorptions. This paper also includes a brief discussion of the integration issues for the introduction of this Ge breakthrough into advanced semiconductor circuits and systems. This includes a comparison of nano-crystalline and non-crystalline dielectrics, as well as issues relative to metal gates.

Lee, S.; Long, J.P.; Lucovsky, G.; Whitten, J.; Seo, H.; Luning, J.

2009-05-19T23:59:59.000Z

186

Interface and nanostructure evolution of cobalt germanides on Ge(001)  

SciTech Connect

Cobalt germanide (Co{sub x}Ge{sub y}) is a candidate system for low resistance contact modules in future Ge devices in Si-based micro and nanoelectronics. In this paper, we present a detailed structural, morphological, and compositional study on Co{sub x}Ge{sub y} formation on Ge(001) at room temperature metal deposition and subsequent annealing. Scanning tunneling microscopy and low energy electron diffraction clearly demonstrate that room temperature deposition of approximately four monolayers of Co on Ge(001) results in the Volmer Weber growth mode, while subsequent thermal annealing leads to the formation of a Co-germanide continuous wetting layer which evolves gradually towards the growth of elongated Co{sub x}Ge{sub y} nanostructures. Two types of Co{sub x}Ge{sub y} nanostructures, namely, flattop- and ridge-type, were observed and a systematic study on their evolution as a function of temperature is presented. Additional transmission electron microscopy and x-ray photoemission spectroscopy measurements allowed us to monitor the reaction between Co and Ge in the formation process of the Co{sub x}Ge{sub y} continuous wetting layer as well as the Co{sub x}Ge{sub y} nanostructures.

Grzela, T., E-mail: grzela@ihp-microelectronics.com; Schubert, M. A. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Koczorowski, W. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Dipartimento di Scienze, Università degli Studi Roma Tre, I-00146 Roma (Italy); Czajka, R. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Radny, M. W. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); School of Mathematical and Physical Sciences, The University of Newcastle, University Drive, Callaghan NSW, 2308 (Australia); Curson, N.; Schofield, S. R. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); BTU Cottbus, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

2014-02-21T23:59:59.000Z

187

Elimination of GeO(2) And Ge(3)N(4) Interfacial Transition Regions And Defects at N-Type Ge Interfaces: a Pathway for Formation of N-MOS Devices on Ge Substrates  

SciTech Connect

The contribution from relatively low-K SiON interfacial transition regions (ITRs) between Si and transition metal (TM) gate dielectrics places a significant limitation on equivalent oxide thickness (EOT) scaling for Si complementary metal-oxide-semiconductor (CMOS) devices. This limitation is equally significant and limiting for Ge CMOS devices. Low-K Ge-based ITRs in Ge devices have also been shown to limit performance and reliability, particular for n-MOS field effect transistors. This article identifies the source of significant electron trapping at interfaces between n-Ge or inverted p-Ge, and Ge oxide, nitride and oxynitride ITRs. This is shown to be an interfacial band alignment issue in which native Ge ITRs have conduction band offset energies smaller than those of TM dielectrics, and trap electrons for negative Ge substrate bias. This article also describes a novel remote plasma processing approach for effectively eliminating any significant native Ge ITRs and using a plasma-processing/annealing process sequence for bonding TM gate dielectrics directly to the Ge substrate surface.

Lucovsky, G.; Lee, S.; Long, J.P.; Seo, H.; Luning, J.

2009-05-19T23:59:59.000Z

188

Zinc Stannate (Zn2SnO4) Dye-Sensitized Solar Cells  

Science Journals Connector (OSTI)

Atomic-Scale Imaging of Cation Ordering in Inverse Spinel Zn2SnO4 Nanowires ... Atomic-Scale Imaging of Cation Ordering in Inverse Spinel Zn2SnO4 Nanowires ... By using high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) coupled with density functional theory (DFT) calculations, we demonstrate the atomic-level imaging of cation ordering in inverse spinel Zn2SnO4 nanowires. ...

Bing Tan; Elizabeth Toman; Yanguang Li; Yiying Wu

2007-03-20T23:59:59.000Z

189

Unusual reaction paths of SN2 nucleophile substitution reactions CH4+H-  

E-Print Network (OSTI)

Unusual reaction paths of SN2 nucleophile substitution reactions CH4+H- CH4+H- and CH4+F- CH3F for the SN2 nucleophile substitution reactions CH4+H- CH4+H- and CH4+F- CH3F+H- . The calculated gradient of the PES, which is observed for almost all the studied gas phase SN2 reactions [1-18]. However, when

Quapp, Wolfgang

190

GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery  

Office of Science (SC) Website

GE Uses DOE Advanced Light Sources to Develop GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery Technology Discovery & Innovation Stories of Discovery & Innovation Brief Science Highlights SBIR/STTR Highlights Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 06.13.11 GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery Technology Company is constructing a new battery factory in Upstate New York that is expected to create 300+ jobs. Print Text Size: A A A Subscribe FeedbackShare Page Click to enlarge photo. Enlarge Photo GE's new Image courtesy of GE GE's new "Durathon(tm)" sodium metal halide battery. The story of American manufacturing over the past two decades has too often been a tale of outsourcing, off-shoring, and downsizing-not least in

191

Über die Thalliumgermanate Tl2Ge4O9 und Tl2Ge6O13  

Science Journals Connector (OSTI)

Nach Dehydratation des Germanat-Zeoliths Tl3HGe7O16· · 4 H2O bildet sich bei 650°C das zu Me2Ge4O9 (Me=Na, K, Rb) isotype Thalliumtetragermanat. Durch Entwässerung bei 700°C entsteht aus dem Zeolith ein stabiles ...

Penelope Papamantellos; A. Wittmann

1962-01-01T23:59:59.000Z

192

Ethanol electro-oxidation on partially alloyed Pt-Sn-Rh/C catalysts  

Science Journals Connector (OSTI)

Abstract Ternary Pt-Sn-Rh/C catalysts of Pt:Sn:Rh = 1:0.8:0.2 and 1:1:0.33 atomic ratios were synthesized using the formic acid method and their electrochemical activities were compared for ethanol oxidation with that of binary Pt-Sn/C (1:1) and Pt-Rh/C (1:0.11) catalysts. XRD analysis indicated the presence of Sn in both alloyed and oxide form and suggested the formation of a ternary Pt-Sn-Rh alloy in both catalysts. The particle size by TEM was around 3.5 nm for all catalysts. The efficiency for Pt utilization increased with Rh content. Pt-Sn-Rh/C catalysts exhibited higher catalytic activity for ethanol oxidation than Pt-Rh/C, but lower than Pt-Sn/C. Among ternary catalysts, Pt-Sn-Rh/C (1:0.8:0.2) was the most active. In situ IRRAS showed Rh plays a dual counteracting role during ethanol electro-oxidation on Pt-Sn-Rh/C catalysts, once it promotes C-C bond breaking, thus favouring CO2 formation, but hinders adsorption of ethanol, decreasing the production of acetic acid.

Elson A. de Souza; M.Janete Giz; Giuseppe A. Camara; Ermete Antolini; Raimundo R. Passos

2014-01-01T23:59:59.000Z

193

Neutron capture on 130Sn during r-process freeze-out  

E-Print Network (OSTI)

We examine the role of neutron capture on 130Sn during r-process freeze-out in the neutrino-driven wind environment of the core-collapse supernova. We find that the global r-process abundance pattern is sensitive to the magnitude of the neutron capture cross section of 130Sn. The changes to the abundance pattern include not only a relative decrease in the abundance of 130Sn and an increase in the abundance of 131Sn, but also a shift in the distribution of material in the rare earth and third peak regions.

J. Beun; J. C. Blackmon; W. R. Hix; G. C. McLaughlin; M. S. Smith; R. Surman

2008-06-24T23:59:59.000Z

194

E-Print Network 3.0 - application zr-sn alloys Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

used... , Zr, Sn, ... Source: Zheng, Yufeng - Department of Advanced Materials and Nanotechnology, Peking University Collection: Materials Science ; Biology and Medicine 2...

195

GE Wind Energy | Open Energy Information  

Open Energy Info (EERE)

Wind Energy Wind Energy Jump to: navigation, search Name GE Wind Energy Place Atlanta, Georgia Zip GA 30339 Sector Wind energy Product GE's wind energy division, formed as a result of the purchase of almost all of Enron Wind Corporation's assets. Provides power plant design, engineering and site selection, as well as operation and maintenance. Coordinates 33.748315°, -84.391109° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.748315,"lon":-84.391109,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

196

Messungen derK-Konversionskoeffizienten und der Aktivierungsquerschnitte der isomeren Atomkerne Se77m , Se79m , Ge75m und Ge77m  

Science Journals Connector (OSTI)

TheK-conversion coefficients ? K of the nuclear isomers Se77m , Se79m , Ge75m and Ge77m have been measured by d...

Hermann Weigmann

1962-01-01T23:59:59.000Z

197

Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces  

SciTech Connect

This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

1995-07-01T23:59:59.000Z

198

Biofuel Research at Brazil Center of Excellence | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

do texto. Aproveitem. A misso do centro de excelncia de biocombustves da GE do Brasil aumentar a capacidade local de fornecer tecnologia na produo de biocombustves...

199

Meeting Energy Needs in Brazil |GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Brazil Looking a Decade Ahead: Electrical Power Generation in Brazil Ricardo Hernandez Pereira 2014.11.03 In the Bioenergy Systems Organization at GE Global Research - Rio de...

200

GE Technology to Help Canada Province Meet Growing Energy Needs  

NLE Websites -- All DOE Office Websites (Extended Search)

funding and collaboration models at its European Global Research Center near Munich, Germany. Mark Little, GE's Senior Vice President and Chief Technology Officer, and thought...

Note: This page contains sample records for the topic "uut ge sn" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
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201

Governor Cuomo, GE Announce Power Electronics Manufacturing Consortium  

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Governor Cuomo Announces 100 Businesses Led by GE to Join 500 Million Partnership with State to Develop Next-Generation Power Electronics, Creating Thousands of Jobs in Capital...

202

Technology makes reds "pop" in LED displays | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Televisions Research breakthrough will vastly improve color and crispness of images on LED devices NISKAYUNA, NY, July, 24, 2014 - GE announced today a research breakthrough that...

203

Titan propels GE wind turbine research into new territory | ornl...  

NLE Websites -- All DOE Office Websites (Extended Search)

Titan propels GE wind turbine research into new territory January 17, 2014 The amount of global electricity supplied by wind, the world's fastest growing energy source, is expected...

204

Heteroepitaxial Ge-on-Si by DC magnetron sputtering  

SciTech Connect

The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany)] [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany); Patzig, Christian; Berthold, Lutz; Höche, Thomas [Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Straße 1, 06120 Halle (Germany)] [Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Straße 1, 06120 Halle (Germany); Tünnermann, Andreas [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany) [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany); Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena (Germany)

2013-07-15T23:59:59.000Z

205

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells  

SciTech Connect

GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

2013-05-15T23:59:59.000Z

206

Effect of Ge-composition on the Gain of a Thin Layer Si 1-y Ge y Avalanche Photodiode  

Science Journals Connector (OSTI)

Gain calculation of Si 1-y Ge y n+-i-p+...avalanche photodiode (APD) is described for multiplication layer down to tens of nanometers c...

Kanishka Majumder; N. R. Das

2014-01-01T23:59:59.000Z

207

Probing the Failure Mechanism of SnO{sub 2} Nanowires for Sodium-Ion Batteries  

SciTech Connect

Nonlithium metals such as sodium have attracted wide attention as a potential charge carrying ion for rechargeable batteries. Using in situ transmission electron microscopy in combination with density functional theory calculations, we probed the structural and chemical evolution of SnO{sub 2} nanowire anodes in Na-ion batteries and compared them quantitatively with results from Li-ion batteries (Huang, J. Y.; et al. Science 2010, 330, 1515-1520). Upon Na insertion into SnO{sub 2}, a displacement reaction occurs, leading to the formation of amorphous Na{sub x}Sn nanoparticles dispersed in Na{sub 2}O matrix. With further Na insertion, the Na{sub x}Sn crystallized into Na{sub 15}Sn{sub 4} (x = 3.75). Upon extraction of Na (desodiation), the Na{sub x}Sn transforms to Sn nanoparticles. Associated with the dealloying, pores are found to form, leading to a structure of Sn particles confined in a hollow matrix of Na{sub 2}O. These pores greatly increase electrical impedance, therefore accounting for the poor cyclability of SnO{sub 2}. DFT calculations indicate that Na{sup +} diffuses 30 times slower than Li{sup +} in SnO{sub 2}, in agreement with in situ TEM measurement. Insertion of Na can chemomechanically soften the reaction product to a greater extent than in lithiation. Therefore, in contrast to the lithiation of SnO{sub 2} significantly less dislocation plasticity was seen ahead of the sodiation front. This direct comparison of the results from Na and Li highlights the critical role of ionic size and electronic structure of different ionic species on the charge/discharge rate and failure mechanisms in these batteries.

Gu, Meng; Kushima, Akihiro; Shao, Yuyan; Zhang, Ji-Guang; Liu, Jun; Browning, Nigel D; Li, Ju; Wang, Chongmin

2013-09-30T23:59:59.000Z

208

MU(& Ge-+v,  

Office of Legacy Management (LM)

fil fil MU(& Ge-+v, . !d R&arch & Development b This document consists of 6 Contract Ho. pages and - . --------------_____---. figures No.--~--of.--~~-_-copies, Series,&,, This subcontract entered into this 20 day 0fSepte~ber , 1943, by and between the University of Cliicago, a corporation not for pecuniary profit organized under the ICVS of the Stnto of Illinois, of Chicago, Illinois (hereinafter called "the Contractor") and Yiolverine Tube Divisionof Caluzet 2 Eecla Consolidated Co;-,er co, . a cor?orntion organized under the laws cf the State of l~lch~;an - of Detroit, I:ichigan --- (hersinnftcr called "the Subcontractoi"). WIEHEAS, tho Contractor has heretofore onterod into a contract v;ith the United States of America (rcprcse;!tcd by its dtlly designated

209

Charm photoproduction at 20 GeV  

Science Journals Connector (OSTI)

Sixty-two charm events have been observed in an exposure of the SLAC Hybrid Facility toa backward sacttered laser beam. Based on 22 neutral and 21 charged decays we have measured the charmed-meson lifetimes to be ?D0=(6.8-1.8+2.3)×10-13 sec, ?D±=(7.4-2.0+2.3)×10-13 sec and their ratio ?D±?D0=1.1-0.3+0.6. The inclusive charm cross section at a photon energy of 20 GeV has been measured to be 56-23+24 nb. Evidence is presented for a non-DD¯ component to charm production, consistent with (35±20)% ?c+ production and some D*± production. We have found no unambiguous F decays.

K. Abe et al. ((SLAC Hybrid Facility Photon Collaboration))

1984-07-01T23:59:59.000Z

210

3 GeV Injector Design Handbook  

SciTech Connect

This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

Wiedemann, H.; /SLAC, SSRL

2009-12-16T23:59:59.000Z

211

Photoemission study of Si(111)-Ge(5×5) surfaces  

Science Journals Connector (OSTI)

Photoemission spectroscopy was used to study Si(111)-Ge(5×5) surfaces prepared by annealing Ge films deposited onto Si(111)-(7×7) substrates. The Si 2p core-level line shape was modified in going from (7×7) to (5×5) systems. By decomposing the spectra into bulk- and surface-shifted components the changes in line shape were identified as due to selective replacement of Si by Ge in different layers of the substrate, without any drastic change in the surface structure. The Ge 3d core-level line shape for the Si(111)-Ge(5×5) surface was also measured and compared with that for the Ge(111)-c(2×8) surface. These results are discussed in terms of models for the Si(111)-(7×7) structure. A surface state was observed on the Si(111)-Ge(5×5) surface, which gave rise to a metalliclike Fermi edge in the angle-integrated spectra; a similar surface state was observed on the Si(111)-(7×7) surface but not on the Ge(111)-c(2×8) surface.

T. Miller; T. C. Hsieh; T. -C. Chiang

1986-05-15T23:59:59.000Z

212

Vibrational dynamics in isotopically substituted vitreous GeO2  

Science Journals Connector (OSTI)

We report the polarized Raman spectra of vitreous Ge O216, Ge O218, Ge70O2, and Ge74O2. This yields the O16?O18 and Ge70?Ge74 isotopic shifts for nearly all vibrational modes of the pure glassy material. The shifts of the broad high-frequency (infrared-active) modes are as predicted by a nearest-neighbor central-force ideal continuous—random-network model. The shift of the broad dominant Raman line indicates a small but significant dependence on the Ge mass, and this suggests an effect of disorder not included in the central-force theory. The narrow "defect" line at 530 cm-1 appears to be all oxygen motion, and is tentatively identified with a regular ring of bonds. The narrow line at 345 cm-1 is unique in that it exhibits very little oxygen shift; it seems to consist largely of Ge motion, for which we have no firm explanation.

F. L. Galeener; A. E. Geissberger; G. W. Ogar; Jr.; R. E. Loehman

1983-10-15T23:59:59.000Z

213

FEM Analysis of Nb-Sn Rutherford-type Cables  

SciTech Connect

An important part of superconducting accelerator magnet work is the conductor. To produce magnetic fields larger than 10 T, brittle conductors are typically used. For instance, for Nb{sub 3}Sn the original round wire, in the form of a composite of Copper, Niobium and Tin, is assembled into a so-called Rutherford-type cable, which is used to wind the magnet. The magnet is then subjected to a high temperature heat treatment to produce the chemical reactions that make the material superconducting. At this stage the superconductor is brittle and its superconducting properties sensitive to strain. This work is based on the development of a 2D finite element model, which simulates the mechanical behavior of Rutherford-type cable before heat treatment. The model was applied to a number of different cable architectures. To validate a critical criterion adopted into the single Nb-Sn wire analysis, the results of the model were compared with those measured experimentally on cable cross sections.

Barzi, Emanuela; Gallo, Giuseppe; Neri, Paolo; /Fermilab

2011-01-01T23:59:59.000Z

214

Method for producing superconducting Nb3Sn wires  

SciTech Connect

In a method of producing a superconducting Nb3Sn wire is disclosed which comprises passing a wire or tape of a niobium-base alloy through a molten metal bath containing tin and then heat-treating it to form a Nb3Sn compound layer on the surface of said wire or tape, the improvement wherein said niobium-base alloy is an alloy comprising niobium and 0.1 to 30 atomic percent of hafnium, and said molten metal bath is a molten bath of pure tin or a tin-base alloy consisting of tin, from 0.1 to 70 atomic percent of one element of group IIIb of the periodic table selected from the group consisting of gallium, indium, and aluminum, and from 0.1 to 70 atomic percent of one element of group Ib of the periodic table selected from the group consisting of copper and silver, the total amount of the element of group IIIb and the element of group Ib not exceeding 70 atomic percent.

Sekine, H.; Tachikawa, K.

1982-04-06T23:59:59.000Z

215

Flexible Free-Standing Graphene/SnO2 Nanocomposites Paper for Li-Ion Battery  

Science Journals Connector (OSTI)

A flexible free-standing graphene/SnO2 nanocomposites paper (GSP) was prepared by coupling a simple filtration method and a thermal reduction together for the first time. Compared with the pure SnO2 nanoparticles, the GSP exhibited a better cycling ...

Junfei Liang; Yue Zhao; Lin Guo; Lidong Li

2012-10-22T23:59:59.000Z

216

Thermodynamic stability of oxide, nitride, and carbide coating materials in liquid Sn25Li  

E-Print Network (OSTI)

Thermodynamic stability of oxide, nitride, and carbide coating materials in liquid Sn­25Li S of various oxides, carbides, and nitrides in Sn­Li is estimated as a function of lithium composition K most of the studied nitrides, carbides, and some oxides were found to be stable (DrG > 0). However

Ghoniem, Nasr M.

217

Analysis of atomic and ion debris features of laser-produced Sn and Li plasmas  

E-Print Network (OSTI)

Analysis of atomic and ion debris features of laser-produced Sn and Li plasmas R. W. Coons,a S. S. Harilal, D. Campos, and A. Hassanein School of Nuclear Engineering and Center for Materials Under Extreme provide a CE nearly twice that of Li. However, the kinetic energies of Sn ions are considerably higher

Harilal, S. S.

218

Comparison of EUV spectral and ion emission features from laser-produced Sn and Li plasmas  

E-Print Network (OSTI)

Comparison of EUV spectral and ion emission features from laser- produced Sn and Li plasmas R. W. Coons, D. Campos, M. Crank, S. S. Harilal, and A. Hassanein School of Nuclear Engineering, and Center, and the kinetic energies and fluxes of ions at various laser intensities for both Sn and Li plasmas. The maximum

Harilal, S. S.

219

Convergent synthesis of panclicin-D via intramolecular SN2 displacement approach  

Science Journals Connector (OSTI)

Abstract A convergent enantioselective synthesis of panclicin-D has been reported from simple octanal using syn aldol reaction via intramolecular SN2 displacement reaction for the first time towards the construction of anti-?-lactones in panclicin-D. The key steps involved are C-allylation, asymmetric aldolization under Crimmins condition, intramolecular SN2 displacement, and Mitsunobu esterification reaction.

Jhillu Singh Yadav; Soma Shekar Dachavaram; Adithya Peddapuram; Saibal Das

2014-01-01T23:59:59.000Z

220

Growth of CrO[subscript 2] coated single crystalline (SnO[subscript 2]) tin oxide nanowires  

E-Print Network (OSTI)

Single crystalline tin oxide (SnO[subscript 2]) nanowires have been synthesized by carbothermal reduction of SnO[subscript 2] nanopowder followed by thermal evaporation of the reduced precursor and growth via the ...

Miao, Guo-Xing

Note: This page contains sample records for the topic "uut ge sn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Secretary Chu Speaks at GE Solar Facility | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Chu Speaks at GE Solar Facility Chu Speaks at GE Solar Facility Secretary Chu Speaks at GE Solar Facility November 18, 2011 - 1:19pm Addthis Secretary Steven Chu's remarks, as prepared for delivery, at the General Electric Solar Facility in Arvada, Colorado. Thank you, Fred [Seymour], for the introduction. GE is a leader in energy innovation. Thomas Edison, the father of GE, once said, "I'd put my money on the sun and solar energy. What a source of power!" I imagine he would be amazed by the solar technology that is tested here. It's great to be in Colorado, a state that is at the forefront of the clean energy economy and has more solar jobs per capita than any other state[i]. I'm here at a critical time for America's energy future. It's a time of challenge, but it's also a time of opportunity.

222

GE Nucleus for Residential Energy Use Education, Home Energy  

NLE Websites -- All DOE Office Websites (Extended Search)

GE Nucleus for Residential Energy Use Education, Home Energy GE Nucleus for Residential Energy Use Education, Home Energy Management/Control, Residential Energy Integration Speaker(s): William Watts Date: August 4, 2011 - 12:00pm Location: 90-3122 Seminar Host/Point of Contact: Janie Page Home Energy Gateways offer a single point of access to the AMI Smart Meter into the home. The Nucleus is GE's home energy management gateway. The GE Nucleus securely communicates to a Smart Meter and delivers real-time whole home energy consumption data for display to the Consumer. The Consumer is able to visualize their energy usage habits on a Client that is connected via TLS encryption to the WiFi or Ethernet interface of the Nucleus. The Nucleus records history of the consumer's usage and cost data for tracking of energy consumption habits. GE has a suite of Smart Appliances that

223

GE Lighting Solutions: Noncompliance Determination (2013-SE-4901) |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Noncompliance Determination (2013-SE-4901) Noncompliance Determination (2013-SE-4901) GE Lighting Solutions: Noncompliance Determination (2013-SE-4901) January 11, 2013 DOE issued a Notice of Noncompliance Determination to General Electric Lighting Solutions finding that various models of traffic signal modules do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. GE Lighting Solutions must immediately notify each person (or company) to whom GE Lighting Solutions distributed the noncompliant products that the products do not meet Federal standards. In addition, GE Lighting Solutions must provide to DOE documents and records showing the number of units GE Lighting Solutions distributed and to whom. The manufacturer

224

TEM studies of Ge nanocrystal formation in PECVD grown  

Science Journals Connector (OSTI)

We investigate the effect of annealing on the Ge nanocrystal formation in multilayered germanosilicate–oxide films grown on Si substrates by plasma enhanced chemical vapour deposition (PECVD). The multilayered samples were annealed at temperatures ranging from 750 to 900?°C for 5 min under nitrogen atmosphere. The onset of formation of Ge nanocrystals, at 750?°C, can be observed via high resolution TEM micrographs. The diameters of Ge nanocrystals were observed to be between 5 and 14 nm. As the annealing temperature is raised to 850?°C, a second layer of Ge nanocrystals forms next to the original precipitation band, positioning itself closer to the substrate SiO2 interface. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive x-ray analysis (EDAX) data all indicate that Ge nanocrystals are present in each layer.

S A?an; A Dana; A Aydinli

2006-01-01T23:59:59.000Z

225

On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer  

SciTech Connect

Structural models of growing Ge hut clusters—pyramids and wedges—are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along <110> directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from the second monolayer, pass through cyclic formation of slightly asymmetrical and symmetrical clusters, with symmetrical ones appearing after addition of every fourth monolayer. We suppose that pyramids of symmetrical configurations composed by 2, 6, 10, etc., monolayers over the wetting layer are more stable than asymmetrical ones. This might explain less stability of pyramids in comparison with wedges in dense arrays forming at low temperatures of Ge deposition. Possible nucleation processes of pyramids and wedges on wetting layer patches from identical embryos composed by 8 dimers through formation of 1 monolayer high 16-dimer nuclei different only in their symmetry is discussed. Schematics of these processes are presented. It is concluded from precise STM measurements that top layers of wetting layer patches are relaxed when huts nucleate on them.

Arapkina, Larisa V.; Yuryev, Vladimir A. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)] [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)

2013-09-14T23:59:59.000Z

226

Spreading of Sn-Ag solders on FeNi alloys  

SciTech Connect

The spreading of Sn-3Ag-xBi solders on Fe-42Ni has been studied using a drop transfer setup. Initial spreading velocities as fast as {approx}0.5 m/s have been recorded. The results are consistent with a liquid front moving on a metastable, flat, unreacted substrate and can be described by using a modified molecular-kinetic model for which the rate controlling step is the movement of one atom from the liquid to the surface of the solid substrate. Although the phase diagram predicts the formation of two Fe-Sn intermetallics at the solder/substrate interface in samples heated at temperatures lower than 513 C, after spreading at 250 C only a thin FeSn reaction layer could be observed. Two interfacial layers (FeSn and FeSn2) were found after spreading at 450 C.

Saiz, Eduardo; Hwang, C-W.; Suganuma, Katsuaki; Tomsia, Antoni P.

2003-02-28T23:59:59.000Z

227

Evaluation of photovoltaic materials within the Cu-Sn-S family  

SciTech Connect

Next-generation thin film solar cell technologies require earth abundant photovoltaic absorber materials. Here we demonstrate an alternative approach to design of such materials, evaluating candidates grouped by constituent elements rather than underlying crystal structures. As an example, we evaluate thermodynamic stability, electrical transport, electronic structure, optical and defect properties of Cu-Sn-S candidates using complementary theory and experiment. We conclude that Cu{sub 2}SnS{sub 3} avoids many issues associated with the properties of Cu{sub 4}SnS{sub 4}, Cu{sub 4}Sn{sub 7}S{sub 16}, and other Cu-Sn-S materials. This example demonstrates how this element-specific approach quickly identifies potential problems with less promising candidates and helps focusing on the more promising solar cell absorbers.

Zawadzki, Pawel; Peng, Haowei; Ginley, David S.; Tumas, W.; Zakutayev, Andriy, E-mail: andriy.zakutayev@nrel.gov; Lany, Stephan, E-mail: stephan.lany@nrel.gov [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Baranowski, Lauryn L.; Toberer, Eric S. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States) [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Physics Department, Colorado School of Mines, Golden, Colorado 80401 (United States)

2013-12-16T23:59:59.000Z

228

Composite-processed Nb/sub 3/Sn with titanium addition to the matrix  

SciTech Connect

The effects of a titanium addition to the matrix on the superconducting properties and the metallurgical aspects of the composite-processed Nb/sub 3/Sn have been studied. The titanium added to the matrix is found to diffuse readily into the Nb/sub 3/Sn layer. The small amount of the titanium addition to the matrix significantly increases the growth rate and the critical current density J/sub c/ in high magnetic fields of the Nb/sub 3/Sn layer. A J/sub c/(Nb/sub 3/Sn layer) of over 1 x 10/sup 5/ A/cm/sup 2/ has been obtained at 16 T for the Nb/Cu-7 at. % Sn-0.35 at. % Ti composite wire reacted at 750 /sup 0/C for 100 h. The titanium addition to the matrix may be practically more promising than the titanium addition to the core.

Tachikawa, K.; Sekine, H.; Iijima, Y.

1982-07-01T23:59:59.000Z

229

Low-temperature microwave magnetoresistance of lightly doped p-Ge and p-Ge1?x Six  

Science Journals Connector (OSTI)

The magnetoresistance of a lightly doped p-Ge1?x Six alloy is studied in the range of compositions x = 1–2 at %. The results are compared with the available data for lightly doped p-Ge. The studie...

A. I. Veinger; A. G. Zabrodskii; T. V. Tisnek

2005-10-01T23:59:59.000Z

230

Thermodynamic and Kinetic Study of the Carbothermal Reduction of SnO2 for Solar Thermochemical Fuel Generation  

Science Journals Connector (OSTI)

Thermodynamic and Kinetic Study of the Carbothermal Reduction of SnO2 for Solar Thermochemical Fuel Generation ... Fossil fuel depletion and the environmental impact of their generalized use on the climate stability are major issues for the upcoming century. ... The carboredn. in SnO2 to produce Sn and its hydrolysis with steam to generate hydrogen were studied. ...

Gaël Levêque; Stéphane Abanades

2013-12-18T23:59:59.000Z

231

Influence of Surface Structure on the Capacity and Irreversible Capacity Loss of Sn-Based Anodes for Lithium Ion Batteries  

Science Journals Connector (OSTI)

(1-5) Numerous solar and wind power energy plants have been invested in to exploit sustainable and renewable energy. ... These materials demonstrate discharge capacities on the order of 1000 mAh/(g Sn), which is consistent with the alloying capacity limit of 4.4 Li atoms per Sn atom, or 991 mAh/(g Sn). ...

Li Li; Xuan Liu; Shulan Wang; Wenzhi Zhao

2014-05-19T23:59:59.000Z

232

SnO2-CuO/graphene nanocomposites for high performance Li-ion battery anodes  

Science Journals Connector (OSTI)

The nanocomposites of SnO2-CuO/graphene are synthesized via a two-step method. ... CuO nanorods are firstly uniformly loaded on the graphene nanosheets, and then SnO2 nanoparticles are coated on CuO nanorods. SnO

Jun Zhao; WanFei Shan; XinBei Xia; Qi Wang…

2014-06-01T23:59:59.000Z

233

Flower-like SnO2 nanoparticles grown on graphene as anode materials for lithium-ion batteries  

Science Journals Connector (OSTI)

Tin oxide (SnO2)/graphene composite was synthesized from SnCl2?·?2H2O and graphene oxide (GO) by a wet chemical-hydrothermal route. The GO was reduced to graphene nanosheet (GNS) and flower-like SnO2 nano-crystal...

Qi Guo; Xue Qin

2014-04-01T23:59:59.000Z

234

Experimental scaling law for mass ablation rate from a Sn plasma generated by a 1064 nm laser  

E-Print Network (OSTI)

. INTRODUCTION Laser produced Sn plasma, in its role as an efficient extreme ultraviolet EUV x-ray sourceExperimental scaling law for mass ablation rate from a Sn plasma generated by a 1064 nm laser depth in planar Sn targets irradiated with a pulsed 1064 nm laser was investigated over laser

Najmabadi, Farrokh

235

1,4,7-Trimethyloxatriquinane: SN2 Reaction at Tertiary Carbon Mark Mascal,* Nema Hafezi, and Michael D. Toney  

E-Print Network (OSTI)

1,4,7-Trimethyloxatriquinane: SN2 Reaction at Tertiary Carbon Mark Mascal,* Nema Hafezi for the reaction between 1 and N3 - is SN2, despite the fact that substitution is occurring at a tertiary carbon chemistry textbooks, is that bimolecular nucleophilic substitution (SN2) reactions do not occur at tertiary

Toney, Michael

236

Chiral r-Substituted Carbonyls and Alcohols from the SN2 Displacement of Cuprates on Chiral Carbonates: An Alternative  

E-Print Network (OSTI)

of reactions, based on the anti-selective SN2 addition of cuprates to allylic carbonates, transforms alkynesChiral r-Substituted Carbonyls and Alcohols from the SN2 Displacement of Cuprates on Chiral freedom of the vinyl group in 6 during the SN2 displacement step; the stereoselectivity of the cuprate

Spino, Claude

237

Gas-Phase Identity SN2 Reactions of Halide Anions and Methyl Halides with Retention of Configuration  

E-Print Network (OSTI)

Gas-Phase Identity SN2 Reactions of Halide Anions and Methyl Halides with Retention back-side and front-side SN2 reactions are found to involve the same ion-molecule complex (X-,,,H3CX of a front-side SN2 reaction with retention of configuration at saturated carbon. Analysis of our

Schlegel, H. Bernhard

238

Formation of Nanocrystalline Germanium via Oxidation of Si?.??Ge?.?? for Memory Device Applications  

E-Print Network (OSTI)

In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si?.??Ge?.?? films. In dry oxidation, Ge was rejected from the growing ...

Kan, Eric Win Hong

239

Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals  

SciTech Connect

The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ?10{sup 3} ?cm for un-implanted samples to ?10{sup ?2} ?cm for as-implanted ones are observed. The resistivity is further decreased to ?10{sup ?3} ?cm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33 eV) related to the Ge donor is observed in 1000 °C annealed samples.

Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K. [College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan)

2013-12-04T23:59:59.000Z

240

Characterization of Cu{sub 6}Sn{sub 5} intermetallic powders produced by water atomization and powder heat treatment  

SciTech Connect

Since the Cu{sub 6}Sn{sub 5} intermetallic shows its importance in industrial applications, the Cu{sub 6}Sn{sub 5} intermetallic-containing powders, produced by a powder processing route with a high production rate, were characterized. The route consisted of water atomization of an alloy melt (Cu–61 wt.% Sn) and subsequent heat treatment of the water-atomized powders. Characterization of the water-atomized powders and their heated forms was conducted by using X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Fine water-atomized powder microstructures consisted of primary hexagonal ?-Cu{sub 6.25}Sn{sub 5} dendrites coexisting with interdendritic ?-Cu{sub 6.25}Sn{sub 5} + ?-Sn eutectic. Solidification of fine melt droplets was governed by surface nucleation and growth of the primary hexagonal ?-Cu{sub 6.25}Sn{sub 5} dendrites followed by ?-Cu{sub 6.25}Sn{sub 5} + ?-Sn eutectic solidification of the remnant liquid. In coarse melt droplets, nucleation and growth of primary ?-Cu{sub 3}Sn dendrites were followed by peritectic reaction (?-Cu{sub 3}Sn + liquid ? ?-Cu{sub 6.25}Sn{sub 5}) or direct crystallization of ?-Cu{sub 6.25}Sn{sub 5} phase from the undercooled melt. Finally, the ?-Cu{sub 6.25}Sn{sub 5} + ?-Sn eutectic solidification of the remnant liquid occurred. Heating of the water-atomized powders at different temperatures resulted in microstructural homogenization. The water-atomized powders with mixed phases were transformed to powders with single monoclinic ?-Cu{sub 6}Sn{sub 5} phase. - Highlights: • The Cu{sub 6}Sn{sub 5} intermetallic powder production route was proposed. • Single phase Cu{sub 6}Sn{sub 5} powders could be by water atomization and heating. • Water-atomized Cu–Sn powders contained mixed Cu–Sn phases. • Solidification and heat treatment of water-atomized Cu–Sn powders are explained.

Tongsri, Ruangdaj, E-mail: ruangdt@mtec.or.th [Powder Metallurgy Research and Development Unit (PM-RDU), National Metal and Materials Technology Center, 114 Paholyothin, Klong 1, Klong Luang, Pathum Thani 12120 (Thailand); Yotkaew, Thanyaporn, E-mail: thanyy@mtec.or.th [Powder Metallurgy Research and Development Unit (PM-RDU), National Metal and Materials Technology Center, 114 Paholyothin, Klong 1, Klong Luang, Pathum Thani 12120 (Thailand); Krataitong, Rungtip, E-mail: rungtipk@mtec.or.th [Powder Metallurgy Research and Development Unit (PM-RDU), National Metal and Materials Technology Center, 114 Paholyothin, Klong 1, Klong Luang, Pathum Thani 12120 (Thailand); Wila, Pongsak, E-mail: pongsakw@mtec.or.th [Powder Metallurgy Research and Development Unit (PM-RDU), National Metal and Materials Technology Center, 114 Paholyothin, Klong 1, Klong Luang, Pathum Thani 12120 (Thailand); Sir-on, Autcharaporn, E-mail: autchars@mtec.or.th [Materials Characterization Research Unit (MCRU), National Metal and Materials Technology Center, 114 Paholyothin, Klong 1, Klong Luang, Pathum Thani 12120 (Thailand); Muthitamongkol, Pennapa, E-mail: pennapm@mtec.or.th [Materials Characterization Research Unit (MCRU), National Metal and Materials Technology Center, 114 Paholyothin, Klong 1, Klong Luang, Pathum Thani 12120 (Thailand); Tosangthum, Nattaya, E-mail: nattayt@mtec.or.th [Powder Metallurgy Research and Development Unit (PM-RDU), National Metal and Materials Technology Center, 114 Paholyothin, Klong 1, Klong Luang, Pathum Thani 12120 (Thailand)

2013-12-15T23:59:59.000Z

Note: This page contains sample records for the topic "uut ge sn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Low temperature epitaxial growth of Ge on cube- textured Ni  

SciTech Connect

Quasi- single crystal Ge films were grown on [001]<010> textured Ni substrate at a temperature of 350 oC using an insulating buffer layer of CaF2. A direct deposition of Ge on Ni at 350 oC was shown to alloy with Ni. From x- ray pole figure analysis, it was shown that Ge grew epitaxially with the same orientation as CaF2 and the dispersions in the out- of- plane and in- plane directions were found to be 1.7 0.1o and 6 1o, respectively. In the out- of- plane direction, Ge[111]||CaF2[111]||Ni[001]. In addition, the Ge consisted of four equivalent in- plane oriented domains such that two mutually orthogonal directions: Ge 211 and Ge 011 are parallel to mutually orthogonal directions: Ni 110 and Ni 110 , respectively of the Ni(001) surface. This was shown to be originated from the four equivalent in- plane oriented domains of CaF2 created to minimize the mismatch strain between CaF2 and Ni in those directions.

GIARE, C [Rensselaer Polytechnic Institute (RPI); Palazzo, J [Rensselaer Polytechnic Institute (RPI); Goyal, Amit [ORNL; WANG, G [Rensselaer Polytechnic Institute (RPI); LU, T [Rensselaer Polytechnic Institute (RPI)

2012-01-01T23:59:59.000Z

242

Multifilamentary Nb-Hf/Cu-Sn-Ga composite wires  

SciTech Connect

This paper reports the procedure for the simultaneous addition of hafnium to the core and gallium to the matrix of the composite-processed multifilamentary Nb/sub 3/Sn superconductors and the effect of this addition on the high-field superconducting properties of the alloy. Specifications for the samples are given; a four-probe resistive method was used to measure their critical temperature and critical current. The strain dependence of the critical current was measured using an apparatus designed to apply a tensile strain, a current, and a perpendicular magnetic field at the same time to short wire samples at 4.2 K. Metallographic studies demonstrated that niobium-hafnium cores with hafnium content up to 5 at .% showed good workability. The simultaneous addition of hafnium to the core and gallium to the matrix increased the critical temperature by 0.4 to 0.6 K and also significantly improved the critical current density in high fields.

Kamata, K.; Alhara, K.; Sekine, H.; Tachikawa, K.

1982-01-01T23:59:59.000Z

243

The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1? x (ZnSe)x, Ge-(Ge2)1?x (ZnSe)x, GaP-(Ge2)1?x (ZnSe)x, and Si-(Ge2)1?x (ZnSe)x  

Science Journals Connector (OSTI)

Based on morphological investigations, as well as on a study of the scanning patterns and diffraction spectra of the heterostructures GaAs-(Ge2)1?x (ZnSe)x, Ge-(Ge2)1?x (ZnSe)x, Ga...

A. S. Saidov; É. A. Koshchanov; A. Sh. Razzakov

1998-01-01T23:59:59.000Z

244

GeV Emission from Collisional Magnetized Gamma Ray Bursts  

E-Print Network (OSTI)

Magnetic fields may play a dominant role in gamma-ray bursts, and recent observations by the Fermi satellite indicate that GeV radiation, when detected, arrives delayed by seconds from the onset of the MeV component. Motivated by this, we discuss a magnetically dominated jet model where both magnetic dissipation and nuclear collisions are important. We show that, for parameters typical of the observed bursts, such a model involving a realistic jet structure can reproduce the general features of the MeV and a separate GeV radiation component, including the time delay between the two. The model also predicts a multi-GeV neutrino component.

P. Mészáros; M. J. Rees

2011-04-26T23:59:59.000Z

245

SN 2005at - A neglected type Ic supernova at 10 Mpc  

E-Print Network (OSTI)

We present a photometric and spectroscopic study of a reddened type Ic supernova (SN) 2005at. We report our results based on the available data of SN 2005at, including late-time observations from the Spitzer Space Telescope and the Hubble Space Telescope. In particular, late-time mid-infrared observations are something rare for type Ib/c SNe. In our study we find SN 2005at to be very similar photometrically and spectroscopically to another nearby type Ic SN 2007gr, underlining the prototypical nature of this well-followed type Ic event. The spectroscopy of both events shows similar narrow spectral line features. The radio observations of SN 2005at are consistent with fast evolution and low luminosity at radio wavelengths. The late-time Spitzer data suggest the presence of an unresolved light echo from interstellar dust and dust formation in the ejecta, both of which are unique observations for a type Ic SN. The late-time Hubble observations reveal a faint point source coincident with SN 2005at, which is very ...

Kankare, E; Ryder, S; Romero-Canizales, C; Mattila, S; Kotak, R; Laursen, P; Monard, L A G; Salvo, M; Vaisanen, P

2014-01-01T23:59:59.000Z

246

Effects of the IV a element additions on composite-processed Nb/sub 3/Sn  

SciTech Connect

This study, aimed at the research being done to improve the critical current density of composite-processed Nb/sub 3/Sn in high magnetic fields, gives a review of results recently achieved on the effects of IVa elements addition to Nb/sub 3/ with a Cu-Sn or Cu-Sn-Ga matrix. Titanium has also been added to the matrix. Experimental procedures are given; the metallurgical aspects and the compositions of the Nb/sub 3/Sn layer with different core and matrix are analyzed. It is found that: IVa elements added to the niobium core increase the growth rate of Nb/sub 3/Sn two three times and prevent the grain coarsening of Nb/sub 3/Sn at high reaction temperatures; the addition of titanium or hafnium increases the H /SUB c2/ by about 4 T; the addition of titanium to the matrix improves the high-field properties of Nb/sub 3/Sn without deteriorating the ductility of the core; a simultaneous addition of hafnium and gallium is most effective in enhancing the critical current density in high fields. Results for zirconium addition are also presented.

Tachikawa, K.; SeKine, H.; Takeuchi, T., Asano, T.; Tijima, Y.

1982-01-01T23:59:59.000Z

247

SN 2012au: A GOLDEN LINK BETWEEN SUPERLUMINOUS SUPERNOVAE AND THEIR LOWER-LUMINOSITY COUNTERPARTS  

SciTech Connect

We present optical and near-infrared observations of SN 2012au, a slow-evolving supernova (SN) with properties that suggest a link between subsets of energetic and H-poor SNe and superluminous SNe. SN 2012au exhibited conspicuous Type-Ib-like He I lines and other absorption features at velocities reaching Almost-Equal-To 2 Multiplication-Sign 10{sup 4} km s{sup -1} in its early spectra, and a broad light curve that peaked at M{sub B} = -18.1 mag. Models of these data indicate a large explosion kinetic energy of {approx}10{sup 52} erg and {sup 56}Ni mass ejection of M{sub Ni} Almost-Equal-To 0.3 M{sub Sun} on par with SN 1998bw. SN 2012au's spectra almost one year after explosion show a blend of persistent Fe II P-Cyg absorptions and nebular emissions originating from two distinct velocity regions. These late-time emissions include strong [Fe II], [Ca II], [O I], Mg I], and Na I lines at velocities {approx}> 4500 km s{sup -1}, as well as O I and Mg I lines at noticeably smaller velocities {approx}< 2000 km s{sup -1}. Many of the late-time properties of SN 2012au are similar to the slow-evolving hypernovae SN 1997dq and SN 1997ef, and the superluminous SN 2007bi. Our observations suggest that a single explosion mechanism may unify all of these events that span -21 {approx}< M{sub B} {approx}< -17 mag. The aspherical and possibly jetted explosion was most likely initiated by the core collapse of a massive progenitor star and created substantial high-density, low-velocity Ni-rich material.

Milisavljevic, Dan; Soderberg, Alicia M.; Margutti, Raffaella; Drout, Maria R.; Marion, G. Howie; Sanders, Nathan E.; Lunnan, Ragnhild; Chornock, Ryan; Berger, Edo; Foley, Ryan J.; Challis, Pete; Kirshner, Robert P.; Dittmann, Jason; Bieryla, Allyson; Kamble, Atish; Chakraborti, Sayan [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Hsiao, Eric Y. [Carnegie Observatories, Las Campanas Observatory, Colina El Pino, Casilla 601 (Chile); Fesen, Robert A.; Parrent, Jerod T. [6127 Wilder Lab, Department of Physics and Astronomy, Dartmouth College, Hanover, NH 03755 (United States); Levesque, Emily M., E-mail: dmilisav@cfa.harvard.edu [CASA, Department of Astrophysical and Planetary Sciences, University of Colorado, 389-UCB, Boulder, CO 80309 (United States); and others

2013-06-20T23:59:59.000Z

248

Tension and Systematics in the Gold06 SnIa Dataset  

E-Print Network (OSTI)

The Gold06 SnIa dataset recently released in astro-ph/0611572 consists of five distinct subsets defined by the group or instrument that discovered and analyzed the corresponding data. These subsets are: the SNLS subset (47 SnIa), the HST subset (30 SnIa), the HZSST subset (41 SnIa), the SCP subset (26 SnIa) and the Low Redshift (LR) subset (38 SnIa). These subsets sum up to the 182 SnIa of the Gold06 dataset. We use Monte-Carlo simulations to study the statistical consistency of each one of the above subsets with the full Gold06 dataset. In particular, we compare the best fit $w(z)$ parameters (w_0,w_1) obtained by subtracting each one of the above subsets from the Gold06 dataset (subset truncation), with the corresponding best fit parameters (w^r_0,w^r_1) obtained by subtracting the same number of randomly selected SnIa from the same redshift range of the Gold06 dataset (random truncation). We find that the probability for (w^r_0,w^r_1)=(w_0,w_1) is large for the Gold06 minus SCP (Gold06-SCP) truncation but is less than 5% for the Gold06-SNLS, Gold06-HZSST and Gold06-HST truncations. This result implies that the Gold06 dataset is not statistically homogeneous. By comparing the values of the best fit (w_0,w_1) for each subset truncation we find that the tension among subsets is such that the SNLS and HST subsets are statistically consistent with each other and `pull' towards LCDM (w_0=-1,w_1=0) while the HZSST subset is statistically distinct and strongly `pulls' towards a varying w(z) crossing the line $w=-1$ from below (w_00). We also isolate six SnIa that are mostly responsible for this behavior of the HZSST subset.

S. Nesseris; L. Perivolaropoulos

2007-01-09T23:59:59.000Z

249

Intermixing between HfO{sub 2} and GeO{sub 2} films deposited on Ge(001) and Si(001): Role of the substrate  

SciTech Connect

Thermally driven atomic transport in HfO{sub 2}/GeO{sub 2}/substrate structures on Ge(001) and Si(001) was investigated in N{sub 2} ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO{sub 2}/Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO{sub 2}/GeO{sub 2} stacks are stable only if isolated from the Ge substrate.

Soares, G. V.; Krug, C. [Instituto de Fisica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil); Miotti, L.; Bastos, K. P.; Lucovsky, G. [Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States); Baumvol, I. J. R. [Instituto de Fisica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil); Universidade de Caxias do Sul, Caxias do Sul, Rio Grande do Sul 95070-560 (Brazil); Radtke, C. [Instituto de Quimica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil)

2011-03-28T23:59:59.000Z

250

Electron-transfer-coupled SN2 reaction mechanism in the gas phase  

Science Journals Connector (OSTI)

This calculation introduces a promising way to catalyze gas-phase SN2 reactions at a unimolecular level by using an excess electron (EE) as an “electron solvent”. The EE participation leads to very favorable energetics for the reaction, by neutralizing the created positive charge as the reaction proceeds, and by also positioning the transition state earlier. The reaction occurs via an unusual electron-transfer-coupled SN2 mechanism. EE-transfer from its binding zone to the attacking group is a key step. This work provides additional insights into the unimolecular SN2 mechanism catalyzed by an EE acting as an “electron solvent”.

Xinyu Song

2011-01-01T23:59:59.000Z

251

Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al{sub 2}O{sub 3}/Ge structures  

SciTech Connect

The ultrathin GeO{sub x}/Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al{sub 2}O{sub 3}/Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO{sub x} layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of {approx}0.3 nm with an increase in the GeO{sub x} thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of {approx}0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO{sub x}/Ge interfaces on Ge (100) and (111) surfaces.

Zhang, Rui [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan) [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); School of Electronic Science and Engineering, Nanjing University, 22 Hankou Road, Nanjing 210093 (China); Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)] [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

2013-02-25T23:59:59.000Z

252

GE Appliances: Proposed Penalty (2010-CE-2113) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE Appliances: Proposed Penalty (2010-CE-2113) GE Appliances: Proposed Penalty (2010-CE-2113) GE Appliances: Proposed Penalty (2010-CE-2113) September 8, 2010 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Appliances failed to certify a variety of dehumidifiers as compliant with the applicable energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Appliances: Proposed Penalty (2010-CE-2113) More Documents & Publications De'Longhi USA: Proposed Penalty (2010-CE-2114)

253

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) March 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Lighting Solutions: Proposed Penalty (2013-SE-4901) More Documents & Publications Act One: NPCP (2013-CE-49001) Excellence Opto: Proposed Penalty (2013-CE-49002)

254

Crystal Lake - GE Energy Wind Farm | Open Energy Information  

Open Energy Info (EERE)

GE Energy Wind Farm GE Energy Wind Farm Jump to: navigation, search Name Crystal Lake - GE Energy Wind Farm Facility Crystal Lake - GE Energy Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Resources Developer NextEra Energy Resources Location IA Coordinates 43.194201°, -93.860521° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":43.194201,"lon":-93.860521,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

255

Northern Colorado Wind Energy Center (GE) | Open Energy Information  

Open Energy Info (EERE)

Center (GE) Center (GE) Jump to: navigation, search Name Northern Colorado Wind Energy Center (GE) Facility Northern Colorado Wind Energy Center (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Developer NextEra Energy Energy Purchaser Xcel Energy Location Logan County CO Coordinates 40.974539°, -103.025336° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.974539,"lon":-103.025336,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

256

ORNL Partners with GE on New Hybrid | ornl.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

ORNL Partners with GE on New Hybrid ORNL Partners with GE on New Hybrid September 02, 2011 Water Heater About 400 jobs will soon be created at a Louisville General Electric plant at which a new electric water heater will be built. The technology was developed through a collaboration between ORNL and GE. The appliance will meet the new Energy Star water heater program criteria, which require future heaters to be twice as efficient as an electric storage water heater, positioning GE to be the first company to meet the energy-saving standard. According to DOE, using devices that meet these criteria should save American households approximately $780 million. ORNL's Patrick Hughes said the water heater will benefit consumers with its energy efficiency as well as its cost savings. "It will give you as much hot water and have the same recovery times so you

257

Intern Shares Insight Into Researchers' Minds |GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

rest of the year, I am a Ph.D. candidate at Virginia Tech, where my research is in aerodynamics and instrumentation development. At school, my work is supported by GE Power and...

258

A Deep Dive into the Subsea Environment | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

every step must be carried out in a safe manner to assure the risk of any serious accident is kept low, with very tight and conservative control. Filling the need GE...

259

Laser Guiding for GeV Laser-Plasma Accelerators  

E-Print Network (OSTI)

Overview of plasma-based accelerator concepts. IEEE Trans.using laser wake?eld accelerators. Meas. Sci. Technol. 12,for GeV laser-plasma accelerators. In Advanced Accelerator

Leemans, Wim; Esarey, Eric; Geddes, Cameron; Schroeder, C.B.; Toth, Csaba

2005-01-01T23:59:59.000Z

260

Making Silicon Carbide Devices in the Cleanroom | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Silicon Carbide Devices in the Cleanroom Making Silicon Carbide Devices in the Cleanroom Ron Olson 2012.08.23 As the Wide Bandgap Process and Fab manager for the GE Global Research...

Note: This page contains sample records for the topic "uut ge sn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Ge-on-Si laser operating at room temperature  

E-Print Network (OSTI)

Monolithic lasers on Si are ideal for high-volume and large-scale electronic–photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide ...

Liu, Jifeng

262

Helping Astronauts Back on Earth | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Helping Astronauts Back on Earth Helping Astronauts Back on Earth Vikas Revanna Shivaprabhu 2014.09.11 I received an email in early May from GE Global Research regarding a summer...

263

Take a Closer Look at the Brain | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Take a Closer Look at the Brain Take a Closer Look at the Brain Worldwide, more than 450 million people are living with compromised brain health. GE Global Research scientists,...

264

Be a part of something bigger than yourself GE Healthcare  

E-Print Network (OSTI)

, reliability, cost and manufacturability. Work is done using 3D CAD systems. Leading engineering tasks external covers, packaging, mechanisms, cables & harnesses, labelling, and packaging. Knowledge Healthcare, a $17 billion division of General Electric Company. GE Healthcare's broad range of products

Rimon, Elon

265

Cloud-Based Air Traffic Management Announcement | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Works to Bring Air Traffic Management Into "The Cloud" GE Works to Bring Air Traffic Management Into "The Cloud" A global leader in avionics and software development, the General...

266

Sandia National Laboratories: Northrop-Grumman, GE Partnerships...  

NLE Websites -- All DOE Office Websites (Extended Search)

Experience Northrop-Grumman, GE Partnerships Tap a Wide Range of Sandia Labs Experience Solar Energy Research Institute for India and the United States Kick-Off American Chemical...

267

Steve Duclos, Chief Scientist, GE Global Research, Research Priorities...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

essionC3Duclos-GE.pdf More Documents & Publications Trans-Atlantic Workshop on Rare Earth Elements and Other Critical Materials for a Clean Energy Future Iowa lab gets critical...

268

Wind Turbine Transportation in Toyland | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Edison's Desk > Wind Turbine Transportation in Toyland Wind Turbine Transportation in Toyland Charles (Burt) Theurer 2011.05.27 GE doesn't just make wind turbines. We also deliver...

269

LNG Technology Is in the News | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

LNG Technology Is in the News LNG Technology Is in the News Laura Hudy 2013.02.07 My name is Laura Hudy, and I lead the Thermal Energy Systems team at GE Global Research. One of...

270

Ge quantum dots structural peculiarities depending on the preparation conditions  

Science Journals Connector (OSTI)

EXAFS and XANES spectroscopy methods have been applied in a study of the influence of the preparation conditions on the spatial and electronic structure of Ge/Si heterostructures.

Erenburg, S.

2003-08-28T23:59:59.000Z

271

Notrees 1B (GE Energy) Wind Farm | Open Energy Information  

Open Energy Info (EERE)

B (GE Energy) Wind Farm B (GE Energy) Wind Farm Jump to: navigation, search Name Notrees 1B (GE Energy) Wind Farm Facility Notrees 1B (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Duke Energy Carolinas LLC Developer Duke Energy Carolinas LLC Location TX Coordinates 31.9685988°, -99.9018131° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.9685988,"lon":-99.9018131,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

272

Enhanced Oil Recovery to Fuel Future Oil Demands | GE Global...  

NLE Websites -- All DOE Office Websites (Extended Search)

to Fuel Future Oil Demands Enhanced Oil Recovery to Fuel Future Oil Demands Trevor Kirsten 2013.10.02 I'm Trevor Kirsten and I lead a team of GE researchers that investigate a...

273

Pushing Super Materials to the Limit | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

to the Limit this Spring Break SpringBreakIt - Pushing Super Materials to the Limit this Spring Break Joseph Vinciquerra 2014.04.23 I lead GE's Materials Processing and Testing...

274

Probing the Structure of {sup 74}Ge Nucleus with Coupled-channels Analysis of {sup 74}Ge+{sup 74}Ge Fusion Reaction  

SciTech Connect

We study the fusion reaction of the {sup 74}Ge+{sup 74}Ge system in term of the full order coupled-channels formalism. We especially calculated the fusion cross section as well as the fusion barrier distribution of this reaction using transition matrix suggested by recent Coulomb excitation experiment. We compare the results with the one obtained by coupling matrix based on pure vibrational and rotational models. The present coupled-channels calculations for the barrier distributions obtained using experiment coupling matrix is in good agreement with the one obtained with vibrational model, in contrast to the rotational model. This is indicates that {sup 74}Ge nucleus favor a spherical shape than a deformed shape in its ground state. Our results will resolve the debates concerning the structure of this nucleus.

Zamrun F, Muhammad [Deparment of Physics University of Malaya, Kuala Lumpur, 50603 (Malaysia); Jurusan Fisika FMIPA, Universitas Haluoleo, Kendari, Sulawesi Tenggara, 93232 (Indonesia); Kasim, Hasan Abu [Deparment of Physics University of Malaya, Kuala Lumpur, 50603 (Malaysia)

2010-12-23T23:59:59.000Z

275

Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer  

SciTech Connect

A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 deg. C. After annealing the sample in an oxygen atmosphere at 1000 deg. C, a structure, namely two layers of quantum dots, was formed with the newly formed Ge-rich quantum dots embedded in the oxidized matrix with the position accurately located upon the as-grown quantum dots. It has been found that the formation of such nanostructures strongly depends upon the growth temperature and oxygen atmosphere. A growth mechanism was proposed to explain the formation of the nanostructure based on the Ge diffusion from the as-grown quantum dots, Ge segregation from the growing oxide, and subsequent migration/agglomeration.

Nie Tianxiao [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Lin Jinhui; Shao Yuanmin; Wu Yueqin; Yang Xinju; Fan Yongliang; Jiang Zuimin [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Chen Zhigang [Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Zou Jin [Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Centre for Microscopy and Microanalysis, University of Queensland, Brisbane, Queensland QLD 4072 (Australia)

2011-12-01T23:59:59.000Z

276

Radiopharmaceutical stannic Sn-117m chelate compositions and methods of use  

DOE Patents (OSTI)

Radiopharmaceutical compositions including .sup.117m Sn labeled stannic (Sn.sup.4+) chelates are provided. The chelates are preferably polyhydroxycarboxylate, such as oxalates, tartrates, citrates, malonates, gluconates, glucoheptonates and the like. Methods of making .sup.117m Sn-labeled (Sn.sup.4+) polyhydroxycarboxylic chelates are also provided. The foregoing pharmaceutical compositions can be used in methods of preparing bone for scintigraphical analysis, for radiopharmaceutical skeletal imaging, treatment of pain resulting from metastatic bone involvement, treatment of primary bone cancer, treatment of cancer resulting from metastatic spread to bone from other primary cancers, treatment of pain resulting from rheumatoid arthritis, treatment of bone/joint disorders and to monitor radioactively the skeletal system.

Srivastava, Suresh C. (Setauket, NY); Meinken, George E. (Middle Island, NY)

2001-01-01T23:59:59.000Z

277

Microscopic description of isoscalar giant resonance excitations in ??Ca and ¹¹?SN nuclei  

E-Print Network (OSTI)

This thesis presents a microscopic description of isoscalar giant resonance excitations in ??Ca and ¹¹? Sn nuclei within the self-consistent Skyrme-Hartree-Fock-Random-Phase-Approximation (HF-RPA) theory. Such characteristic features...

Karki, Bhishma

2000-01-01T23:59:59.000Z

278

Photoluminescence of SnO2 nanoparticles embedded in Al2O3. |...  

NLE Websites -- All DOE Office Websites (Extended Search)

in Al2O3 substrate fabricated by ion implantation. Citation: Xiang X, XT Zu, S Zhu, LM Wang, V Shutthanandan, P Nachimuthu, and Y Zhang.2008."Photoluminescence of SnO2...

279

Ordered mesoporous carbon/SnO2 composites as the electrode material for supercapacitors  

Science Journals Connector (OSTI)

A series of composites as electrode materials for supercapacitors were prepared via incipient wetness impregnation method utilizing ordered mesoporous carbon (OMC) and tin (IV) oxide (SnO2) with different ratio. ...

Ping Liu ??; Bohejin Tang; Jiachang Zhao…

2011-06-01T23:59:59.000Z

280

A New Mathematical Adjoint for the Modified SAAF-SN Equations  

SciTech Connect

We present a new adjoint FEM weak form, which can be directly used for evaluating the mathematical adjoint, suitable for perturbation calculations, of the self-adjoint angular flux SN equations (SAAF-SN) without construction and transposition of the underlying coecient matrix. Stabilization schemes incorporated in the described SAAF-SN method make the mathematical adjoint distinct from the physical adjoint, i.e. the solution of the continuous adjoint equation with SAAF-SN . This weak form is implemented into RattleSnake, the MOOSE (Multiphysics Object-Oriented Simulation Environment) based transport solver. Numerical results verify the correctness of the implementation and show its utility both for fixed source and eigenvalue problems.

Schunert, Sebastian (090720); Wang, Yaqi (090690); Martineau, Richard C (062281)

2015-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "uut ge sn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Combustion Synthesis and Characterization of Nanocrystalline Tin and Tin Oxide (SnOx, x 02) Particles  

E-Print Network (OSTI)

Engineering, University of Michigan, Ann Arbor, Michigan 48109-2125 Nanocrystalline SnOx particles (x 0 solar cells,9 ­11 liquid crystal displays,10,11 photodetec- tors,6,11 and video touch screens,10 to name

Wooldridge, Margaret S.

282

Development of Nb{sub 3}Sn Cavity Vapor Diffusion Deposition System  

SciTech Connect

Nb{sub 3}Sn is a BCS superconductors with the superconducting critical temperature higher than that of niobium, so theoretically it surpasses the limitations of niobium in RF fields. The feasibility of technology has been demonstrated at 1.5 GHz with Nb{sub 3}Sn vapor deposition technique at Wuppertal University. The benefit at these frequencies is more pronounced at 4.2 K, where Nb{sub 3}Sn coated cavities show RF resistances an order of magnitude lower than that of niobium. At Jefferson Lab we started the development of Nb{sub 3}Sn vapor diffusion deposition system within an R\\&D development program towards compact light sources. Here we present the current progress of the system development.

Eremeev, Grigory V.; Macha, Kurt M.; Clemens, William A.; Park, HyeKyoung; Williams, R. Scott

2014-02-01T23:59:59.000Z

283

Molecular Mimicry Regulates ABA Signaling by SnRK2 Kinases and PP2C Phosphatases  

SciTech Connect

Abscisic acid (ABA) is an essential hormone for plants to survive environmental stresses. At the center of the ABA signaling network is a subfamily of type 2C protein phosphatases (PP2Cs), which form exclusive interactions with ABA receptors and subfamily 2 Snfl-related kinase (SnRK2s). Here, we report a SnRK2-PP2C complex structure, which reveals marked similarity in PP2C recognition by SnRK2 and ABA receptors. In the complex, the kinase activation loop docks into the active site of PP2C, while the conserved ABA-sensing tryptophan of PP2C inserts into the kinase catalytic cleft, thus mimicking receptor-PP2C interactions. These structural results provide a simple mechanism that directly couples ABA binding to SnRK2 kinase activation and highlight a new paradigm of kinase-phosphatase regulation through mutual packing of their catalytic sites.

Soon, Fen-Fen; Ng, Ley-Moy; Zhou, X. Edward; West, Graham M.; Kovach, Amanda; Tan, M.H. Eileen; Suino-Powell, Kelly M.; He, Yuanzheng; Xu, Yong; Chalmers, Michael J.; Brunzelle, Joseph S.; Zhang, Huiming; Yang, Huaiyu; Jiang, Hualiang; Li, Jun; Yong, Eu-Leong; Cutler, Sean; Zhu, Jian-Kang; Griffin, Patrick R.; Melcher, Karsten; Xu, H. Eric (Van Andel); (Scripps); (NWU); (Purdue); (UCR); (Chinese Aca. Sci.); (NU Singapore)

2014-10-02T23:59:59.000Z

284

E-Print Network 3.0 - al cu sn Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Uniwersytet Jagiellonski Collection: Physics 6 Defect physics of the kesterite thin-film solar cell absorber Cu2ZnSnS4 Shiyou Chen,1,2 Summary: Defect physics of the...

285

SnO2/graphene composite with high lithium storage capability for lithium rechargeable batteries  

Science Journals Connector (OSTI)

SnO2/graphene nanocomposites have been fabricated by a simple...2...nanoparticles to be formed and uniformly decorated on the graphene. The electrostatic attraction between a graphene nanosheet (GNS) and the echi...

Haegyeom Kim; Sung-Wook Kim; Young-Uk Park; Hyeokjo Gwon; Dong-Hwa Seo…

2010-11-01T23:59:59.000Z

286

SnSb@carbon nanocable anchored on graphene sheets for sodium ion batteries  

Science Journals Connector (OSTI)

The development of materials with unique nanostructures is an effective strategy for the improvement of sodium storage in sodium ion batteries to achieve stable cycling performance and good ... , SnSbcore/carbon-...

Li Li; Kuok Hau Seng; Dan Li; Yongyao Xia; Hua Kun Liu; Zaiping Guo

2014-10-01T23:59:59.000Z

287

Graphene supported Li2SnO3 as anode material for lithium-ion batteries  

Science Journals Connector (OSTI)

The graphene supported Li2SnO3 composites were prepared via a deoxidation technique. The structure, morphology and electrochemical properties of the composites were detected by means of XRD, SEM, TEM, Raman, TGA ...

Yang Zhao; Ying Huang; Qiufen Wang; XiaoYa Wang; Meng Zong…

2013-09-01T23:59:59.000Z

288

E-Print Network 3.0 - aperture nb3sn racetrack Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

and Test Results of the Summary: 10-turn racetrack coils with a 300 mm- long straight section were wound from reacted 30-strand Nb3Sn... about ten years from now. This paper...

289

DSA Preconditioning for the S_N Equations with Strictly Positive Spatial Discretization  

E-Print Network (OSTI)

Preconditioners based upon sweeps and diffusion-synthetic acceleration (DSA) have been constructed and applied to the zeroth and first spatial moments of the 1-D transport equation using SN angular discretization and a strictly positive nonlinear...

Bruss, Donald

2012-07-16T23:59:59.000Z

290

E2/SN2 and Other Organic Ion-Molecule Reactions  

Science Journals Connector (OSTI)

Eleven presentations were made, nine on various aspect of gas phase E2 and/or SN2 reactions and two on positive ion-molecule processes. Presentations were limited to five minutes each and discussion was delayed u...

Charles DePuy; Hans Grützmacher

1991-01-01T23:59:59.000Z

291

Quantum dynamic calculation for gas-phase nucleophilic substitution (SN2) reactions  

Science Journals Connector (OSTI)

According to experimental data, gas-phase SN2 reactions have low efficiency characterized by the ratio k(T)/kc, where kc is the collision rate constant. The energy profile of the reaction pathway is a double-well...

V. M. Ryaboi

292

Ge interactions on HfO{sub 2} surfaces and kinetically driven patterning of Ge nanocrystals on HfO{sub 2}  

SciTech Connect

Germanium interactions are studied on HfO{sub 2} surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO{sub 2}. Germanium chemical vapor deposition at 870 K on HfO{sub 2} produces a GeO{sub x} adhesion layer, followed by growth of semiconducting Ge{sup 0}. PVD of 0.7 ML Ge (accomplished by thermally cracking GeH{sub 4} over a hot filament) also produces an initial GeO{sub x} layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge{sup 0}. Temperature programed desorption experiments of {approx}1.0 ML Ge from HfO{sub 2} at 400-1100 K show GeH{sub 4} desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO{sub 2} where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO{sub 2} and SiO{sub 2} allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO{sub 2} surfaces that is demonstrated.

Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G. [Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712-0231 (United States); Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78712-0240 (United States); Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712-0231 (United States)

2006-01-15T23:59:59.000Z

293

EXAFS Study of Sn(IV) Immobilization by Hardened Cement Paste and Calcium Silicate Hydrates  

Science Journals Connector (OSTI)

An alternative structural model for Sn(IV) binding in HCP has been developed, assuming that ettringite is the uptake-controlling phase. ... Although there is no Al in C?S?H, Al is a possible second neighbor in HCP due to the presence of Al-containing phases, e.g., monosulfate, ettringite, and hydrogarnet. ... Preliminary experiments further support that ettringite could be a possible host phase for Sn(IV) (39). ...

Isabelle Bonhoure; Erich Wieland; André M. Scheidegger; Michael Ochs; Dominik Kunz

2003-04-12T23:59:59.000Z

294

16 - Microcavities and quantum cascade laser structures based on silicon–germanium (SiGe) nanostructures  

Science Journals Connector (OSTI)

Abstract: This chapter discusses two types of Si-based light-emitting devices based on Ge quantum dots in optical microcavities and SiGe quantum cascade (QC) structures. After reviewing various solutions for Si-based light-emitting devices, the chapter describes the method to enhance light emission from Ge dots through embedding them into optical microcavities. It then reviews SiGe quantum cascade laser (QCL) structures on issues of material growth, electroluminescence from SiGe QC structures, n-type SiGe QC structures, and waveguides for SiGe QCLs.

J. Xia; Y. Shiraki; J. Yu

2011-01-01T23:59:59.000Z

295

EFFECT OF NaF AND SnO{sub 2} ON PORTLAND CEMENT CLINKER FABRICATION  

SciTech Connect

The paper aimed at studying the effect of NaF and SnO{sub 2} employed as mineralisers on Portland cement clinker fabrication. In order to do this, the raw mix included in turn 0.5% NaF, 0.5% SnO{sub 2}, and a combination of 0.5% NaF and 0.5% SnO{sub 2}, all expressed as weight percentages of the raw mix. The effects of the presence of NaF and SnO{sub 2} mineralisers on the raw mix were studied by investigations of the loss on ignition at 700 deg. C and 800 deg. C with calculating the corresponding decarbonation ratio of the raw mix, determination of free lime and XRD analysis. NaF was found to have a positive effect both during the decarbonation of the raw mix and during the formation of minerals in clinker. On the other hand, SnO{sub 2} has but a little effect on the decarbonation process. Finally, the combined use of NaF and SnO{sub 2} modifies the kinetics of binding the free lime to the effect of accelerating the process as compared to the separate use of each mineraliser.

Paceagiu, Jenica; Amzica, Florin; Chendrean, Teofil; Paraschiv, Tatiana [CEPROCIM SA, Bucharest (Romania)

2008-08-28T23:59:59.000Z

296

SN 2009js AT THE CROSSROADS BETWEEN NORMAL AND SUBLUMINOUS TYPE IIP SUPERNOVAE: OPTICAL AND MID-INFRARED EVOLUTION  

SciTech Connect

We present a study of SN 2009js in NGC 918. Multi-band Kanata optical photometry covering the first {approx}120 days shows the source to be a Type IIP SN. Reddening is dominated by that due to our Galaxy. One-year-post-explosion photometry with the New Technology Telescope and a Subaru optical spectrum 16 days post-discovery both imply a good match with the well-studied subluminous SN 2005cs. The plateau-phase luminosity of SN 2009js and its plateau duration are more similar to the intermediate luminosity IIP SN 2008in. Thus, SN 2009js shares characteristics with both subluminous and intermediate luminosity supernovae (SNe). Its radioactive tail luminosity lies between SN 2005cs and SN 2008in, whereas its quasi-bolometric luminosity decline from peak to plateau (quantified by a newly defined parameter {Delta}logL, which measures adiabatic cooling following shock breakout) is much smaller than both the others'. We estimate the ejected mass of {sup 56}Ni to be low ({approx}0.007 M{sub Sun }). The SN explosion energy appears to have been small, similar to that of SN 2005cs. SN 2009js is the first subluminous SN IIP to be studied in the mid-infrared. It was serendipitously caught by Spitzer at very early times. In addition, it was detected by WISE 105 days later with a significant 4.6 {mu}m flux excess above the photosphere. The infrared excess luminosity relative to the photosphere is clearly smaller than that of SN 2004dj, which has been extensively studied in the mid-infrared. The excess may be tentatively assigned to heated dust with mass {approx}3 Multiplication-Sign 10{sup -5} M{sub Sun }, or to CO fundamental emission as a precursor to dust formation.

Gandhi, P. [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Yamanaka, M.; Itoh, R. [Department of Physical Science, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8526 (Japan); Tanaka, M. [National Astronomical Observatory, Mitaka, Tokyo (Japan); Nozawa, T.; Maeda, K.; Moriya, T. J. [Kavli Institute for the Physics and Mathematics of the Universe, University of Tokyo, Kashiwa (Japan); Kawabata, K. S. [Hiroshima Astrophysical Science Center, Hiroshima University, Higashi-Hiroshima, Hiroshima 739-8526 (Japan); Saviane, I. [European Southern Observatory, Alonso de Cordova 3107, Santiago 19 (Chile); Hattori, T. [Subaru Telescope, National Astronomical Observatory of Japan, Hilo, HI 96720 (United States); Sasada, M. [Department of Astronomy, Graduate School of Science, Kyoto University, Kyoto 606-8502 (Japan)

2013-04-20T23:59:59.000Z

297

A study of an Al-Ge3N4-Ge structure by the method of photo-capacitance-voltage characteristics  

Science Journals Connector (OSTI)

Results are reported of a study of a Ge-Ge3N4...interface by the method of capacitance-voltage characteristics, with the structure irradiated with photons of varied energy. The employed technique revealed trap le...

R. B. Dzhanelidze; M. B. Dzhanelidze; M. R. Katsiashvili

2000-10-01T23:59:59.000Z

298

THE PROGENITOR OF SN 2011ja: CLUES FROM CIRCUMSTELLAR INTERACTION  

SciTech Connect

Massive stars, possibly red supergiants, which retain extended hydrogen envelopes until core collapse, produce Type II plateau (IIP) supernovae. The ejecta from these explosions shocks the circumstellar matter originating from the mass loss of the progenitor during the final phases of its life. This interaction accelerates particles to relativistic energies which then lose energy via synchrotron radiation in the shock-amplified magnetic fields and inverse Compton scattering against optical photons from the supernova. These processes produce different signatures in the radio and X-ray parts of the electromagnetic spectrum. Observed together, they allow us to break the degeneracy between shock acceleration and magnetic field amplification. In this work, we use X-rays observations from the Chandra and radio observations from the Australia Telescope Compact Array to study the relative importance of processes which accelerate particles and those which amplify magnetic fields in producing the non-thermal radiation from SN 2011ja. We use radio observations to constrain the explosion date. Multiple Chandra observations allow us to probe the history of variable mass loss from the progenitor. The ejecta expands into a low-density bubble followed by interaction with a higher density wind from a red supergiant consistent with M{sub ZAMS} {approx}> 12 M{sub Sun }. Our results suggest that a fraction of Type IIP supernovae may interact with circumstellar media set up by non-steady winds.

Chakraborti, Sayan [Institute for Theory and Computation, Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Ray, Alak; Yadav, Naveen [Tata Institute of Fundamental Research, 1 Homi Bhabha Road, Colaba, Mumbai 400 005 (India); Smith, Randall [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Ryder, Stuart [Australian Astronomical Observatory, P.O. Box 915, North Ryde, NSW 1670 (Australia); Sutaria, Firoza [Indian Institute of Astrophysics, Koramangala, Bangalore (India); Dwarkadas, Vikram V. [Department of Astronomy and Astrophysics, University of Chicago, 5640 South Ellis Avenue, Chicago, IL 60637 (United States); Chandra, Poonam [Department of Physics, Royal Military College of Canada, Kingston, ON K7K 7B4 (Canada); Pooley, David [Department of Physics, Sam Houston State University, Huntsville, TX (United States); Roy, Rupak, E-mail: schakraborti@fas.harvard.edu [Aryabhatta Research Institute of Observational Sciences, Manora Peak, Nainital (India)

2013-09-01T23:59:59.000Z

299

Gamma-rays from Type Ia supernova SN2014J  

E-Print Network (OSTI)

The whole set of INTEGRAL observations of type Ia supernova SN2014J, covering the period 16-162 days after the explosion has being analyzed. For spectral fitting the data are split into early and late periods covering days 16-35 and 50-162, respectively, optimized for Ni-56 and Co-56 lines. As expected for the early period much of the gamma-ray signal is confined to energies below $\\sim$200 keV, while for the late period it is most strong above 400 keV. In particular, in the late period Co-56 lines at 847 and 1248 keV are detected at 4.7 and 4.3 sigma respectively. The lightcurves in several representative energy bands are calculated for the entire period. The resulting spectra and lightcurves are compared with a subset of models. We confirm our previous finding that the gamma-ray data are broadly consistent with the expectations for canonical 1D models, such as delayed detonation or deflagration models for a near-Chandrasekhar mass WD. Late optical spectra (day 136 after the explosion) show rather symmetric ...

Churazov, E; Isern, J; Bikmaev, I; Bravo, E; Chugai, N; Grebenev, S; Jean, P; Knödlseder, J; Lebrun, F; Kuulkers, E

2015-01-01T23:59:59.000Z

300

On the Al-Si, Al-Ge, and Al-Ge-Si systems and their application to brazing in high power semiconductor devices  

Science Journals Connector (OSTI)

Results of the Smith thermal analysis studies13 of the Al-Si, Al-Ge, and Al-Ge-Si systems are presented and compared with ... . Isothermal and vertical sections for the Al-Ge-Si system, computed from thermodynami...

F. H. Hayes; R. D. Longbottom; E. Ahmad; G. Chen

1993-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "uut ge sn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Electron spin resonance observation of an interfacial Ge  

Science Journals Connector (OSTI)

Using electron spin resonance (ESR), we report on the observation of a first Ge dangling bond (DB)-type interface defect in the SiO2/(100)GexSi1?x/SiO2/(100)Si heterostructure manufactured by the condensation technique. The center, exhibiting monoclinic-I (C2v) symmetry with principal g values g1 = 2.0338 ± 0.0003, g2 = 2.0386 ± 0.0006, g3 = 2.0054 is observed in maximum densities of ~6.8 ? 1012 cm?2 of the GexSi1?x/SiO2 interface for x~0.7, the signal disappearing for x outside the 0.45–0.93 range. The notable absence of interfering Si Pb-type centers enables unequivocal spectral analysis. Collectively, the combination of all data leads to depicting the defect as a Ge Pb 1-type center, i.e. not a trigonal basic Ge Pb(0)-type center (). Understanding the modalities of the defect's occurrence may provide an insight into the thus far elusive role of Ge DB defects at Ge/insulator interfaces, and widen our understanding of interfacial DB centers in general.

A Stesmans; P Somers; V V Afanas'ev

2009-01-01T23:59:59.000Z

302

Anisotropic flow in Cu plus Au collisions at root s(N N)=200GeV RID A-2398-2009  

E-Print Network (OSTI)

. Lett. B402, 251 (1997); Phys. Rev. Lett. 78, 2309 (1997); 82, 2048 (1999). [6] P. Danielewicz et al., Phys. Rev. Lett. 81, 2438 (1998). [7] B. Zhang, M. Gyulassy, and C. M. Ko, Phys. Lett. B455, 45 (1999). [8] Y. M. Zheng, C. M. Ko, B. A. Li, and B...

Chen, LW; Ko, Che Ming.

2006-01-01T23:59:59.000Z

303

Gram-Scale Synthesis of Graphene-Mesoporous SnO2 Composite as Anode for Lithium-ion Batteries  

Science Journals Connector (OSTI)

Abstract The gram-scale synthesis of graphene based mesoporous SnO2 composite (G-M-SnO2) has been successfully realized based on kirkendall effect. When used as anode for lithium ion batteries, it delivers a high reversible capacity of 1354 mAhg?1 after 50 cycles at 100 mAg?1 and excellent rate capability of 664 mAhg?1 at 2 Ag?1. The outstanding lithium storage performance mainly results from the synergistic effect of the ultrasmall SnO2 and conductive graphene nanoparticles, which not only enhanced the conductivity of the whole electrode but also provide buffer matrix for the expansion of SnO2 nanoparticles during charge-discharge process. Furthermore, the ultra-small size of SnO2 shortens the diffusion length of Li+/e? in SnO2.

Xiaowu Liu; Xiongwu Zhong; Zhenzhong Yang; Fusen Pan; Lin Gu; Yan Yu

2015-01-01T23:59:59.000Z

304

Cedar Creek Wind Farm I (GE) | Open Energy Information  

Open Energy Info (EERE)

GE) GE) Jump to: navigation, search Name Cedar Creek Wind Farm I (GE) Facility Cedar Creek Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Babcock & Brown/BP America Developer Babcock & Brown/BP America Energy Purchaser Xcel Energy Location Weld County east of Grover CO Coordinates 40.873578°, -104.07825° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.873578,"lon":-104.07825,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

305

Greenhouse Gas Services AES GE EFS | Open Energy Information  

Open Energy Info (EERE)

Greenhouse Gas Services AES GE EFS Greenhouse Gas Services AES GE EFS Jump to: navigation, search Name Greenhouse Gas Services (AES/GE EFS) Place Arlington, Virginia Zip 22203-4168 Product Develop and invest in a range of projects that reduce greenhouse gas emissions that produce verified GHG credits. Coordinates 43.337585°, -89.379449° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":43.337585,"lon":-89.379449,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

306

Top of the World (GE) | Open Energy Information  

Open Energy Info (EERE)

Top of the World (GE) Top of the World (GE) Facility Top of the World (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Duke Energy Carolinas LLC Developer Duke Energy Carolinas LLC Energy Purchaser PacifiCorp Location 4 miles northeast of Glenrock WY Coordinates 42.914132°, -105.691223° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.914132,"lon":-105.691223,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

307

NETL: News Release - GE Sets Benchmarks for Fuel Cell Performance  

NLE Websites -- All DOE Office Websites (Extended Search)

August 8, 2005 August 8, 2005 GE Sets Benchmarks for Fuel Cell Performance Achievements Move Efficient, Clean SOFC Technology Closer to Mainstream Energy Markets TORRANCE, CA - In the race to speed solid oxide fuel cell (SOFC) technology out of niche markets and into widespread commercial use, GE Hybrid Power Generation Systems has kicked fuel cell performance into high gear. Recent advancements have dramatically improved baseline cell performance and accelerate GE's prospects for achieving the system efficiency and cost objectives of DOE's Solid State Energy Alliance (SECA) program. Packing more power into smaller volumes is one of the breakthroughs needed to reduce the cost and expand the use of efficient, environmentally friendly fuel cells. But increasing power density isn't the only goal; as power density increases, fuel cells must continue to efficiently and reliably convert fuel to electric power.

308

Tunneling states in vitreous GeO2s  

Science Journals Connector (OSTI)

Ultrasonic measurements of the attenuation and the velocity variation have been carried out in amorphous GeO2 at low temperature (0.3–10 K) and high frequencies (80–210 MHz). From numerical fits to the tunneling model, the typical parameters of the tunneling states (TS) were determined and compared to those found for vitreous SiO2 . The study reveals that in a-GeO2 , which is considered as a close structural analog to a-SiO2 , although the density of states is found to be very similar in both materials, the coupling between the TS and the phonons is significantly smaller. In the model of coupled tetrahedra as the origin of the TS, this difference can be understood in view of the fact that numerical calculations about the vibrational characteristics of network amorphous solids indicate that the tetrahedra are more decoupled in vitreous GeO2 than in vitreous silica.

Christiane Laermans; Veerle Keppens; Robert Weeks

1997-02-01T23:59:59.000Z

309

Surface structure of liquid Bi and Sn: An x-ray reflectivity study  

SciTech Connect

X-ray reflectivity measurements of the liquid Bi surface are presented and analyzed together with previous liquid Sn results. Published measurements on liquid Ga, In, and K all exhibit a single strong maximum at a wave-vector transfer of the order of the reciprocal of an atomic-diameter, due to surface-induced layering. In contrast, both Sn and Bi exhibit - in addition - a weak broad peak at much smaller wave-vector transfers. This feature is an unambiguous signature of an enhanced electron density in the near-surface region. Possible ways of modeling this enhancement are presented. Once the different surface-roughening effects of thermal capillary waves are accounted for, the surface structure factors of Sn and Bi are remarkably similar. The principal difference between the two is that the depth of the layering below the surface is more than {approx}40% larger for Bi than for Sn. This is considerably larger than the ratio of their covalent radii which is only {approx}10%. No theoretical explanation can be offered at this time for the surface structure difference between Sn and Bi and other elemental liquid metals studied to date: Ga, In, and K.

Pershan, P.S.; Stoltz, S.E.; Shpyrko, Oleg G.; Deutsch, Moshe; Balagurusamy, V.S.K.; Meron, Mati; Lin, Binhua; Streitel, Reinhard; (Bar-Ilan U.); (Harvard); (UCSD); (UC)

2009-03-23T23:59:59.000Z

310

Neutron Knockout on Beams of $^{108,106}$Sn and $^{106}$Cd  

E-Print Network (OSTI)

Characterizing the nature of single-particle states outside of double shell closures is essential to a fundamental understanding of nuclear structure. This is especially true for those doubly magic nuclei that lie far from stability and where the shell closures influence nucleo-synthetic pathways. The region around $^{100}$Sn is one of the most important due to the proximity of the N=Z=50 magic numbers, the proton-drip line, and the end of the rp-process. However, owing to the low production rates, there is a lack of spectroscopic information and no firm spin-parity assignment for ground states of odd-A isotopes close to $^{100}$Sn. Neutron knockout reaction experiments on beams of $^{108,106}$Sn and $^{106}$Cd have been performed at the NSCL. By measuring gamma rays and momentum distributions from reaction residues, the spin of ground state and first excited state for $^{107,105}$Sn have been established. The results also show a degree of mixing in the ground states of the isotopes $^{108,106}$Sn between the...

Cerizza, Giordano

2015-01-01T23:59:59.000Z

311

Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures  

SciTech Connect

The results of a study of the spectral and temporal characteristics of the photoluminescence (PL) from multilayer structures with self-assembled Ge(Si) islands grown on silicon and 'silicon-on-insulator' substrates in relation to temperature and the excitation-light wavelength are presented. A substantial increase in island-related PL intensity is observed for structures with Ge(Si) islands grown on silicon substrates upon an increase in temperature from 4 to 70 K. This increase is due to the diffusion of nonequilibrium carriers from the silicon substrate into the active layer with the islands. In this case, a slow component with a characteristic time of {approx}100 ns appears in the PL rise kinetics. At the same time, no slow component in the PL rise kinetics and no rise in the PL intensity with increasing temperature are observed for structures grown on 'silicon-on-insulator' substrates, in which the active layer with the islands is insulated from the silicon substrate. It is found that absorption of the excitation light in the islands and SiGe wetting layers mainly contributes to the excitation of the PL signal from the islands under sub-bandgap optical pump conditions.

Yablonskiy, A. N., E-mail: yablonsk@ipm.sci-nnov.ru; Baidakova, N. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Novikov, A. V. [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation)] [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation); Lobanov, D. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2013-11-15T23:59:59.000Z

312

Cedar Creek Wind Farm II (GE) | Open Energy Information  

Open Energy Info (EERE)

Cedar Creek Wind Farm II (GE) Cedar Creek Wind Farm II (GE) Jump to: navigation, search Name Cedar Creek Wind Farm II (GE) Facility Cedar Creek II (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner BP Wind Energy Developer BP Wind Energy Energy Purchaser Xcel Energy Location Weld County CO Coordinates 40.868652°, -104.092398° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.868652,"lon":-104.092398,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

313

7-GeV Advanced Photon Source Conceptual Design Report  

SciTech Connect

During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

Not Available

1987-04-01T23:59:59.000Z

314

12 GeV detector technology at Jefferson Lab  

SciTech Connect

The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

Leckey, John P. [Indiana U.

2013-04-01T23:59:59.000Z

315

12 GeV detector technology at Jefferson Lab  

SciTech Connect

The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

Leckey, John P. [Indiana University, Bloomington, IN 47405 (United States); Collaboration: GlueX Collaboration

2013-04-19T23:59:59.000Z

316

Charm Photoproduction Cross Section at 20 GeV  

Science Journals Connector (OSTI)

Forty-seven charm events have been observed in an exposure of the SLAC Hybrid Facility bubble chamber to a 20-GeV backward-scattered laser beam. Thirty-seven events survive all the necessary cuts imposed. Based on this number the total charm cross section is calculated to be 63-28+33 nb.

K. Abe et al. ((Stanford Linear Accelerator Center Hybrid Facility Photon Collaboration))

1983-07-18T23:59:59.000Z

317

SiGeCSi superlattice microcoolers Xiaofeng Fan,a)  

E-Print Network (OSTI)

stabilization of microelectronic and optoelectronic devices. SiGeC can be lattice matched to Si and optoelectronic devices, but their pro- cessing is a bulk technology and is incompatible with inte- grated circuit fabrication process. Solid-state coolers mono- lithically integrated with microelectronic and optoelectronic

318

Radiation effects in Si-Ge quantum size structure (Review)  

SciTech Connect

The article is dedicated to the review and analysis of the effects and processes occurring in Si-Ge quantum size semiconductor structures upon particle irradiation including ion implantation. Comparisons to bulk materials are drawn. The reasons of the enhanced radiation hardness of superlattices and quantum dots are elucidated. Some technological applications of the radiation treatment are reviewed.

Sobolev, N. A., E-mail: sobolev@ua.pt [Universidade de Aveiro, Departamento de Fisica and I3N (Portugal)

2013-02-15T23:59:59.000Z

319

Moment-Preserving SN Discretizations for the One-Dimensional Fokker-Planck Equation  

SciTech Connect

The Fokker-Planck equation: (1) Describes the transport and interactions of charged particles, (2) Many small-angle scattering collisions, (3) Asymptotic limit of the Boltzmann equation (Pomraning, 1992), and (4) The Boltzmann collision operator becomes the angular Laplacian. SN angular discretization: (1) Angular flux is collocated at the SN quadrature points, (2) The second-order derivatives in the Laplacian term must be discretized, and (3) Weighted finite-difference method preserves zeroth and first moments (Morel, 1985). Moment-preserving methods: (1) Collocate the Fokker-Planck operator at the SN quadrature points, (2) Develop several related and/or equivalent methods, and (3) Motivated by discretizations for the angular derivative appearing in the transport equation in one-dimensional spherical coordinates.

Warsa, James S. [Los Alamos National Laboratory; Prinja, Anil K. [Los Alamos National Laboratory

2012-06-14T23:59:59.000Z

320

Development of a new Pb-free solder: Sn-Ag-Cu  

SciTech Connect

With the ever increasing awareness of the toxicity of Pb, significant pressure has been put on the electronics industry to get the Pb out of solder. This work pertains to the development and characterization of an alloy which is Pb-free, yet retains the proven positive qualities of current Sn-Pb solders while enhancing the shortcomings of Sn-Pb solder. The solder studied is the Sn-4.7Ag-1.7Cu wt% alloy. By utilizing a variety of experimental techniques the alloy was characterized. The alloy has a melting temperature of 217{degrees}C and exhibits eutectic melting behavior. The solder was examined by subjecting to different annealing schedules and examining the microstructural stability. The effect of cooling rate on the microstructure of the solder was also examined. Overall, this solder alloy shows great promise as a viable alternative to Pb-bearing solders and, as such, an application for a patent has been filed.

Miller, C.M.

1995-02-10T23:59:59.000Z

Note: This page contains sample records for the topic "uut ge sn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Measurements of Nb3Sn conductor dimension changes during heat treatment  

SciTech Connect

During the heat treatment of Nb{sub 3}Sn coils the conductor material properties change significantly. These effects together with the changes of the conductor dimensions during heat treatment may introduce large strain in the coils for accelerator magnets. The US LHC Accelerator Research Program (LARP) has initiated a study aiming at understanding the thermal expansion and contraction of Nb3Sn strands, cables and coils during heat treatment. Several measurements on strands and cables were performed in order to have sufficient inputs for finite element simulation of the dimensional changes during heat treatment. In this paper the results of measurements of OST-RRP Nb{sub 3}Sn conductor used in the LARP magnet program are discussed.

Bocian, D.; Ambrosio, G.; Whitson, G.M.; /Fermilab

2011-06-01T23:59:59.000Z

322

Structural stability and electronic properties of low-index surfaces of SnS  

SciTech Connect

Thin film photovoltaic cells are increasingly important for cost-effective solar energy harvesting. Layered SnS is a promising absorber material due to its high optical absorption in the visible and good doping characteristics. We use first-principles calculations based on density functional theory to study structures of low-index surfaces of SnS using stoichiometric and oxygen-containing structural models, in order to elucidate their possible effect on the efficiency of the photovoltaic device. We find that the surface energy is minimized for the surface with orientation parallel to the layer stacking direction. Compared to stoichiometric surfaces, the oxygen-containing surfaces exhibit fewer electronic states near the band gap. This reduction of near-gap surface states by oxygen should reduce recombination losses at grain boundaries and interfaces of the SnS absorber, and should be beneficial to the efficiency of the solar cell.

Tritsaris, Georgios A.; Malone, Brad D. [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Kaxiras, Efthimios, E-mail: kaxiras@physics.harvard.edu [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Department of Physics, Harvard University, Cambridge, Massachusetts 02138 (United States)

2014-05-07T23:59:59.000Z

323

Self-assembling of Ge quantum dots in the CaF2/Ge/CaF2/Si heteroepitaxial system and the development of tunnel-resonance diode on its basis  

Science Journals Connector (OSTI)

A CaF2/Ge/CaF2/Si(111) heteroepitaxial structure with Ge quantum dots was grown by molecular-beam ... , is 40–50 meV depending on the Ge dot size.

L. V. Sokolov; A. S. Deryabin; A. I. Yakimov…

2004-01-01T23:59:59.000Z

324

Manufacturing of titanium-bronze processed multifilamentary Nb/sub 3/Sn conductors  

SciTech Connect

It has been revealed that small amount of titanium addition to the bronze matrix is most effective for improving the high-field current-carrying capacities of bronze-processed multifilamentary Nb/sub 3/Sn conductor. Multifilamentary Nb/Cu-7.5at%Sn-0.4at%Ti round wires with 4-5 ..mu..m-diam 31x331-cores fabricated through drawing process only showed the overall critical current density Jc(overall) over 3.5 x 10/sup 4/ A/cm/sup 2/ at 15 T after the heat treatment at 690/sup 0/C for 200 hr. It was also shown that the critical current anisotropy became larger with increasing aspect ratio of the rectangular shaped multifilamentary Nb/Cu-7.5Sn-0.4Ti conductors. Rectangular shaped 5 ..mu..m-diam 31x361-core Nb/Cu-7.5Sn0.45Ti conductors prepared through double extrusions showed about the same tendencies in the aspect ratio dependence of I /SUB c/ (H /SUB II/ ) as those prepared through drawing process only, after the heat treatment at 690/sup 0/C for 200 hr. 9.5 mm wide and 1.8 mm thick Nb/Cu-7.5Sn-0.4Ti conductors with 5 ..mu..m-diam 349x361-cores have been successfully fabricated in full production scale through three steps hydrostatic extrusion process. These rectangular shaped practical multifilamentary Ti bronze Nb/sub 3/Sn conductors make feasible to generate a central magnetic field over 16 T in the 190 mm winding inner diameter intermediate coil of the 18 T superconducting magnet at NRIM.

Kamata, K.; Fujinaga, T.; Itoh, K.; Moriai, H.; Tachikawa, K.; Tada, N.

1985-03-01T23:59:59.000Z

325

The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.  

SciTech Connect

Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

2012-03-01T23:59:59.000Z

326

Recovery Act Helps GE in-source Manufacturing | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing September 30, 2010 - 2:21pm Addthis The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE Lindsay Gsell GE has a long history in Louisville, Ky. The company's appliance and lighting facility in Louisville has been manufacturing appliances for more than 50 years. Like many facilities, it has seen its share of ups-and-downs. Now, after a tough couple of years, the "Appliance Park" facility is making a "manufacturing" comeback -- with the help of the Recovery Act. The plant retooling project, partially funded through a 48C Advanced Energy

327

TEE-0074 - In the Matter of GE Appliances & Lighting | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

74 - In the Matter of GE Appliances & Lighting 74 - In the Matter of GE Appliances & Lighting TEE-0074 - In the Matter of GE Appliances & Lighting This Decision and Order considers an Application for Exception filed by GE Appliances & Lighting (GE) seeking exception relief from the provision of 10 C.F.R. Part 430, Energy Conservation Program for Consumer Products: Energy Conservation Standards for Refrigerators, Refrigerator-Freezers and Freezers (Refrigerator Efficiency Standards). In its exception request, GE asserts that the firm would suffer a gross inequity if required to adhere to the Refrigerator Efficiency Standards codified at 10 C.F.R. § 430.32. If GE's Application for Exception were granted, GE would receive exception relief from the energy efficiency standard applicable to a new

328

10 Years ON: From the Lab to the Real World in 10 Years | GE...  

NLE Websites -- All DOE Office Websites (Extended Search)

Biofuels Research at GE's Brazil Technology Center 2-3-10-v Crowdsourcing Software Platform Wins Award 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom...

329

Characterization of the properties for phase-change material GeSb  

Science Journals Connector (OSTI)

Te-free environmentally friendly GeSb phase-change material has been investigated. Eutectic Ge15Sb85...composition, which has a proper high crystallization temperature of 230°C, is a good candidate for the applic...

Yifeng Gu; Ting Zhang; Zhitang Song; Yanbo Liu; Bo Liu; Songlin Feng

2010-04-01T23:59:59.000Z

330

Large inherent optical gain from the direct gap transition of Ge thin films  

E-Print Network (OSTI)

The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (?) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ...

Wang, Xiaoxin

331

E-Print Network 3.0 - amorphous ge-sb-te films Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

times in GeSbTe films irradiated... commercial phase-change optical recording systems, such as those based on GeSbTe Ref. 3 or AglnSbTe,4 use... the crystalline and...

332

AVTA: GE Energy WattStation AC Level 2 Charging System Testing...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE Energy WattStation AC Level 2 Charging System Testing Results AVTA: GE Energy WattStation AC Level 2 Charging System Testing Results The Vehicle Technologies Office's Advanced...

333

Phase and Shape Evolutions of Ion Beam Synthesized Ge Based Nanostructures  

E-Print Network (OSTI)

ion beam synthesized Ge nanocrystals," in Department of materials science and engineering:nanoscale engineering. In Chapter 5, ion beam and electronIon Beam Synthesized Ge Based Nanostructures by Swanee Shin Doctor of Philosophy in Engineering –

Shin, Swanee

2009-01-01T23:59:59.000Z

334

GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers  

Energy.gov (U.S. Department of Energy (DOE))

GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer machines. GE also urges the DOE...

335

EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois  

Energy.gov (U.S. Department of Energy (DOE))

This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source at DOE's Argonne...

336

Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress  

Science Journals Connector (OSTI)

Antimony is the most widely used n-type dopant for Si molecular-beam epitaxy (MBE). However, because of surface segregation during growth, the control of doping profiles remains difficult. The case of Si/Si1-xGex heterostructures is complicated by the existence of stresses, which may affect both the thermodynamics and kinetics of segregation. In this study, we analyze the segregation of Sb resulting from the MBE growth of Si1-xGex/Si(100) heterostructures using secondary ion mass spectrometry as a function of (i) growth temperature (200 °C<~T°<~550 °C), (ii) germanium content (0<~x<~0.2), and (iii) stresses (compressively strained and relaxed layers). We show that Sb segregation: (i) increases with temperature, (ii) increases with Ge content in biaxially compressed layers, (iii) decreases with Ge content in relaxed layers. The temperature variation indicates that Sb surface segregation during growth is kinetically controlled. The contrasting behaviors observed as a function of Ge content in stressed and relaxed layers can thus be explained by a decrease of the segregation enthalpy induced by Ge addition and an increase of near-surface diffusion in stressed layers.

A. Portavoce; I. Berbezier; P. Gas; A. Ronda

2004-04-15T23:59:59.000Z

337

169Tm Mössbauer investigation of the compounds TmFe2Ge2 and TmCu2Ge2  

Science Journals Connector (OSTI)

Temperature-dependent169Tm Mössbauer measurements are reported for the ternary intermetallic compounds TmT2Ge2 (T=Fe, Cu). Based on comparison with results for their TmT2Si2 counterparts, it is verified that the ...

G. A. Stewart; P. W. Thompson; J. M. Cadogan; Hong-Shuo Li

1994-01-01T23:59:59.000Z

338

The effect of low Au concentrations on the properties of eutectic Sn/Pb  

SciTech Connect

This study was of the effects moderately low Au concentrations ({le} 10 wt%) have on the mechanical properties and microstructure of an eutectic Sn/Pb alloy. Vibration (60--90 Hz swept sine wave for 30 hours) and thermal cycling (0--110C for 1450 cycles) reliability tests were performed on fine pitch leaded chip carriers using eutectic Sn/Pb solder on PCBs (printed circuit boards) with 0, 5, 10, 20, and 50{mu}in nominal Au thicknesses. Testing was also performed on double shear creep specimens consisting of arrays of regular pitch joints. There was a dramatic increase in the number of joints containing voids with increasing Au concentration, an effect more pronounced in the creep joints than in the reliability joints. These voids tended to coalesce and grow during rework simulation of the reliability joints. AuSn{sub 4} intermetallics present in toe of 4.8 wt% (50 {mu}in) Au vibration joints rotated from initial vertical perpendicular to surface of PCB metallization, solidification positions to roughly horizontal (parallel to plating surface) orientations during rework simulation and during aging of the parts. The AuSn{sub 4} intermetallics in the toe of the 4.8 wt% (50{mu}in) Au reflowed joints also rotated after vibration testing. No joint failures were observed in either vibration tested or thermally cycled specimens. Cracks formed in some of the vibration tested specimen joints under the heel of the gull-wing lead at Pb-rich phases. Thermally cycled specimens showed eutectic microstructure and intermetallic coarsening without crack formation. Creep tests showed loss of the superplasticity in eutectic Sn/Pb alloys with even the lowest Au concentration tested of 0.2 wt% Au. Intermetallic rotation was not a factor in crack propagation, but void presence was. Cracks tended to form in joints containing voids before forming in void-free joints. Crack propagation followed Sn/Sn grain boundaries and Sn/Pb phase boundaries from Pb-rich phase to Pb-rich phase.

Kramer, P.A.

1992-05-01T23:59:59.000Z

339

Fusion cross sections for the Be9+Sn124 reaction at energies near the Coulomb barrier  

Science Journals Connector (OSTI)

The complete and incomplete fusion cross sections for Be9+Sn124 reaction have been deduced using the online ?-ray measurement technique. Complete fusion at energies above the Coulomb barrier was found to be suppressed by ~28% compared to the coupled-channels calculations and is in agreement with the systematics of L. R. Gasques et al. [Phys. Rev. C 79, 034605 (2009)]. Study of the projectile dependence for fusion on a Sn124 target shows that, for Be9 nuclei, the enhancement at below-barrier energies is substantial compared to that of tightly bound nuclei.

V. V. Parkar, R. Palit, Sushil K. Sharma, B. S. Naidu, S. Santra, P. K. Joshi, P. K. Rath, K. Mahata, K. Ramachandran, T. Trivedi, and A. Raghav

2010-11-03T23:59:59.000Z

340

Development of Nb{sub 3}Sn superconducting wire for fusion applications  

SciTech Connect

Nb{sub 3}Sn strand for high field fusion magnets has been developed at AISA within the framework of a NET (Next European Torus) contract. The aim of this work is to manufacture by an industrial internal tin process a high critical current density Nb{sub 3}Sn strand with low losses in pulsed field applications ({+-}3 T). Manufacturing results and wire performances are reported in this paper which also includes discussion on the kinetics of bronze formations at different reactions temperatures and on the possible RRR degradation of the reacted chrome-coated strand.

Hoang, G.K.; Bruzek, C.E.; Sulten, P.; Mougenot, P.; Peltier, F.; Grunblatt, G. [GEC Alsthom Intermagnetics, Belfort (France)] [GEC Alsthom Intermagnetics, Belfort (France)

1994-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "uut ge sn" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
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341

Magnetization of in situ multifilamentary superconducting Nb/sub 3/Sn-Cu composites  

SciTech Connect

Magnetic properties are reported for in situ superconducting Nb/sub 3/Sn composites that have exhibited attractive electrical properties and superior mechanical characteristics. Magnetization measurements were conducted up to 4 T at 4.2 K on a variety of samples of different sizes and twist pitches, and the results are presented in absolute M-H curves and losses per cycle. It is observed that the magnetization of such composites is generally proportional to the size of the wire (approx. 0.25 to 0.51 mm) rather than the fiber size (approx. 10/sup -7/ m), which indicates a strong coupling effect among Nb/sub 3/Sn fibers.

Shen, S.S.; Verhoeven, J.D.

1980-01-01T23:59:59.000Z

342

TYPE IIn SUPERNOVA SN 2010jl: OPTICAL OBSERVATIONS FOR OVER 500 DAYS AFTER EXPLOSION  

SciTech Connect

We present extensive optical observations of a Type IIn supernova (SN IIn) 2010jl for the first 1.5 years after its discovery. The UBVRI light curves demonstrated an interesting two-stage evolution during the nebular phase, which almost flatten out after about 90 days from the optical maximum. SN 2010jl has one of the highest intrinsic H{alpha} luminosities ever recorded for an SN IIn, especially at late phase, suggesting a strong interaction of SN ejecta with the dense circumstellar material (CSM) ejected by the progenitor. This is also indicated by the remarkably strong Balmer lines persisting in the optical spectra. One interesting spectral evolution about SN 2010jl is the appearance of asymmetry of the Balmer lines. These lines can be well decomposed into a narrow component and an intermediate-width component. The intermediate-width component showed a steady increase in both strength and blueshift with time until t {approx} 400 days after maximum, but it became less blueshifted at t {approx} 500 days, when the line profile appeared relatively symmetric again. Owing to the fact that a pure reddening effect will lead to a sudden decline of the light curves and a progressive blueshift of the spectral lines, we therefore propose that the asymmetric profiles of H lines seen in SN 2010jl are unlikely due to the extinction by newly formed dust inside the ejecta, contrary to the explanation by some early studies. Based on a simple CSM-interaction model, we speculate that the progenitor of SN 2010jl may suffer a gigantic mass loss ({approx}30-50 M{sub Sun }) a few decades before explosion. Considering a slow-moving stellar wind (e.g., {approx}28 km s{sup -1}) inferred for the preexisting, dense CSM shell and the extremely high mass-loss rate (1-2 M{sub Sun} yr{sup -1}), we suggest that the progenitor of SN 2010jl might have experienced a red supergiant stage and may explode finally as a post-red supergiant star with an initial mass above 30-40 M{sub Sun }.

Zhang Tianmeng; Wu Chao; Zhai Meng; Wu Hong; Fan Zhou; Zou Hu; Zhou Xu; Ma Jun [National Astronomical Observatories of China, Chinese Academy of Sciences, Beijing 100012 (China); Wang Xiaofeng; Chen Juncheng; Chen Jia; Liu Qin; Huang Fang; Liang Jide; Zhao Xulin [Physics Department and Tsinghua Center for Astrophysics (THCA), Tsinghua University, Beijing 100084 (China); Lin Lin [Center for Astrophysics, University of Science and Technology of China, No. 96, JinZhai Road Baohe District, Hefei, Anhui 230026 (China); Wang Min [Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing, 210008 (China); Dennefeld, Michel [Institut d'Astrophysique de Paris, and University Pierre et Marie Curie (Paris 6) (France); Zhang Jujia, E-mail: armengjade@gmail.com, E-mail: wang_xf@mail.tsinghua.edu.cn [Yunnan Astronomical Observatory, Chinese Academy of Sciences, Kunming 650011 (China)

2012-11-01T23:59:59.000Z

343

Synthesis of carbon nanocoil forests on BaSrTiO3 substrates with the aid of a Sn catalyst  

E-Print Network (OSTI)

Synthesis of carbon nanocoil forests on BaSrTiO3 substrates with the aid of a Sn catalyst Jingyu route for the Sn-assisted synthesis of carbon nanocoils (CNCs) by chemical vapor deposition of acetylene catalyst for CNC synthesis in conjunction with either perov- skite oxides (BST) or transition metals (Fe

Castell, Martin

344

SN 2011ht: confirming a class of interacting supernovae with plateau light curves (Type IIn-P)  

Science Journals Connector (OSTI)

......differences in explosion energy. In the case of SN 1994W...conversion of SN kinetic energy into optical light...steady SAGB winds. As an alternative to the possibility of...conversion of kinetic energy into UV-optical-IR...progenitor as luminous as Car (Roming et-al. 2012......

Jon C. Mauerhan; Nathan Smith; Jeffrey M. Silverman; Alexei V. Filippenko; Adam N. Morgan; S. Bradley Cenko; Mohan Ganeshalingam; Kelsey I. Clubb; Joshua S. Bloom; Thomas Matheson; Peter Milne

2013-01-01T23:59:59.000Z

345

Dynamics of laser-produced Sn-based plasmas for a monochromatic 13.5 nm extreme ultraviolet source  

E-Print Network (OSTI)

the critical density, a narrower EUV x-ray spectrum and a higher conversion efficiency from laserDynamics of laser-produced Sn-based plasmas for a monochromatic 13.5 nm extreme ultraviolet source-0417 ABSTRACT Dynamics of laser-produced Sn-based plasmas were investigated for a monochromatic EUV lithography

Najmabadi, Farrokh

346

Facile and surfactant-free synthesis of SnO2-graphene hybrids as high performance anode for lithium-ion batteries  

Science Journals Connector (OSTI)

A facile microwave-assisted ethylene glycol method is developed to synthesize the SnO2 nanoparticles dispersed on or encapsulated in reduced graphene oxide (SnO2-rGO) hybrids. The morphology, structure, and compo...

Chunhui Tan; Shenlong Zhao; Gai Yang; Suqin Hu; Xianzhong Qin

2014-10-01T23:59:59.000Z

347

Dynamic microscopic study of pre-equilibrium giant resonance excitation and fusion in the reactions $^{132}$Sn+$^{48}$Ca and $^{124}$Sn+$^{40}$Ca  

E-Print Network (OSTI)

We study pre-equilibrium giant dipole resonance excitation and fusion in the neutron-rich system $^{132}$Sn+$^{48}$Ca at energies near the Coulomb barrier, and we compare photon yields and total fusion cross sections to those of the stable system $^{124}$Sn+$^{40}$Ca. The dynamic microscopic calculations are carried out on a three-dimensional lattice using both the Time-Dependent Hartree-Fock method and the Density Constrained TDHF method. We demonstrate that the peak of the GDR excitation spectrum occurs at a substantially lower energy than expected for an equilibrated system, thus reflecting the very large prolate elongation of the dinuclear complex during the early stages of fusion. Our theoretical fusion cross-sections for both systems agree reasonably well with recent data measured at HRIBF.

V. E. Oberacker; A. S. Umar; J. A. Maruhn; P. -G. Reinhard

2012-01-25T23:59:59.000Z

348

Atomic structure of amorphous and crystallized Ge{sub 15}Sb{sub 85}  

SciTech Connect

Ge{sub 15}Sb{sub 85} is a promising material for phase-change memory applications owing to its very short crystallization times. As deposited amorphous samples of sputter deposited Ge{sub 15}Sb{sub 85} have been investigated by extended x-ray absorption fine structure (EXAFS) measurements on both, Sb and Ge K absorption edges. After crystallizing the specimen, x-ray diffraction (XRD) and EXAFS measurements have been performed to analyze the atomic structure at different annealing conditions. Thus, experimental techniques focusing on the long range order as well as on the local order have been combined. Sb atoms have on average 3.2(2) nearest neighbors, while Ge atoms have 4.0(3). The Ge-Ge and Ge-Sb bond lengths are determined to 2.46(2) and 2.66(1) A, respectively and agree well with those observed in the amorphous phase of the common phase-change material Ge{sub 2}Sb{sub 2}Te{sub 5}. After crystallizing the sample at 250 deg. C, very different EXAFS spectra with modified Ge-Sb bond lengths are observed. The higher concentration of Ge neighbors at the Ge edge as compared to the as-deposited sample is indicative for phase separation. For the corresponding sample, XRD does not show reflections of Ge, which indicates that the agglomeration of Ge is amorphous or below the coherence length of the x-radiation. The EXAFS spectrum shows a superposition of two phases: one with bond lengths which agree with sp{sup 3}-hybridized Ge [2.43(1) A] and another one with longer Ge-Ge bond lengths [2.79(8) A]. This result can be explained by phase separation in the material.

Zalden, Peter; Eijk, Julia van; Wuttig, Matthias [I. Physikalisches Institut (IA), RWTH Aachen, 52056 Aachen (Germany); Bichara, Christophe [CiNaM-Centre Interdisciplinaire de Nanoscience de Marseille, Campus de Luminy, 13288 Marseille (France); Braun, Carolin; Bensch, Wolfgang [Institut fuer Anorganische Chemie, Universitaet Kiel, Max-Eyth Str. 2, 24118 Kiel (Germany)

2010-05-15T23:59:59.000Z

349

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te  

E-Print Network (OSTI)

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te alloys: Density functional functional simulations, Ge/Sb/Te alloys. Corresponding author: e-mail r.jones@fz-juelich.de, Phone: +49 discussed the alloy As30Ge10Si12Te48, and Te-based alloys have been well represented ever since. Alloys

350

Microwave-assisted hydrothermal synthesis of porous SnO{sub 2} nanotubes and their lithium ion storage properties  

SciTech Connect

Porous SnO{sub 2} nanotubes have been synthesized by a rapid microwave-assisted hydrothermal process followed by annealing in air. The detailed morphological and structural studies indicate that the SnO{sub 2} tubes typically have diameters from 200 to 400 nm, lengths from 0.5 to 1.5 {mu}m and wall thicknesses from 50 to 100 nm. The SnO{sub 2} nanotubes are self-assembled by interconnected nanocrystals with sizes {approx}8 nm resulting in a specific surface area of {approx}54 m{sup 2} g{sup -1}. The pristine SnO{sub 2} nanotubes are used to fabricate lithium half cells to evaluate their lithium ion storage properties. The porous SnO{sub 2} nanotubes are characteristic with high lithium ion storage capacity, that is found to be 1258, 951, 757, 603, 458, and 288 mAh g{sup -1}, at 0.1, 0.2, 0.5, 1, 2, and 4C, respectively. The enhanced electrochemical properties of the SnO{sub 2} nanotubes can be ascribed to their unique geometry and porous structures. - Graphical abstract: Porous SnO{sub 2} nanotubes are synthesized by a fast microwave-assisted hydrothermal process and exhibit high lithium ion storage properties due to their unique geometry and porous characteristics. Highlights: Black-Right-Pointing-Pointer A microwave-assisted hydrothermal method was used to prepare porous SnO{sub 2} nanotubes. Black-Right-Pointing-Pointer The porous SnO{sub 2} nanotubes have abundant mesopores on their tube walls. Black-Right-Pointing-Pointer The porous SnO{sub 2} nanotubes possess high lithium ion storage properties. Black-Right-Pointing-Pointer Our results may promote the development of high-performance anode materials.

Wang, H.E., E-mail: hongen.wang@gmail.com [Department of Physics and Materials Science, City University of Hong Kong (Hong Kong); Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong (Hong Kong); Xi, L.J.; Ma, R.G. [Department of Physics and Materials Science, City University of Hong Kong (Hong Kong); Lu, Z.G. [School of Chemistry and Chemical Engineering, Central South University, Changsha 410083 (China); Chung, C.Y. [Department of Physics and Materials Science, City University of Hong Kong (Hong Kong); Bello, I. [Department of Physics and Materials Science, City University of Hong Kong (Hong Kong); Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong (Hong Kong); Zapien, J.A., E-mail: apjazs@cityu.edu.hk [Department of Physics and Materials Science, City University of Hong Kong (Hong Kong); Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong (Hong Kong)

2012-06-15T23:59:59.000Z

351

A p ? n transition for Sn-doped Cu(In,Ga)Se{sub 2} bulk materials  

SciTech Connect

Cu(In,Ga)Se{sub 2} (CIGSe) pellets at different Sn contents were fabricated by reactive liquid-phase sintering at 600–700 °C with the help of sintering aids of Sb{sub 2}S{sub 3} and Te. Powder preparation was based upon the molecular formula of Cu{sub 0.9}[(In{sub 0.7?x}Sn{sub x}Ga{sub 0.3}){sub 0.9}Sb{sub 0.1}](S{sub 0.15}Te{sub 0.2}Se{sub 1.65}) or Sn-x-CIGSe. Morphology, structure, and electrical property of Sn-doped CIGSe bulks were investigated. The composition of Sn-doped CIGSe is purposely designed for studying the doping effect on the CIGSe performance. The unexpected increase in hole concentration of CIGSe due to the donor doping is rationalized. A controllable n-type semiconductor is deliberately achieved for Sn-0.15-CIGSe and important for making a p/n homojunction in CIGSe solar cells. - Graphical abstract: The controls in defect type and electrical properties of Cu(In,Ga)Se{sub 2} by doping Sn{sup 4+} on the In{sup 3+} site. Highlights: • n-type Sn-CIGSe with n{sub e} of 6.4×10{sup 16} cm{sup ?3} and ?{sub e} of 2.3 cm{sup 2}/V s was obtained. • This n-type Sn-CIGSe was obtained by material design and composition control. • The reported n-type CIGSe was obtained from the Zn/CIGSe and CdS/CIGSe bilayers. • Extrinsic donor doping was explored through the results of electrical properties. • A n/p homojunction with Sn-CIGSe and undoped one can be used for solar cell devices.

Monsefi, Mehrdad; Kuo, Dong-Hau, E-mail: dhkuo@mail.ntust.edu.tw

2013-08-15T23:59:59.000Z

352

Structural basis for basal activity and autoactivation of abscisic acid (ABA) signaling SnRK2 kinases  

SciTech Connect

Abscisic acid (ABA) is an essential hormone that controls plant growth, development, and responses to abiotic stresses. Central for ABA signaling is the ABA-mediated autoactivation of three monomeric Snf1-related kinases (SnRK2.2, -2.3, and -2.6). In the absence of ABA, SnRK2s are kept in an inactive state by forming physical complexes with type 2C protein phosphatases (PP2Cs). Upon relief of this inhibition, SnRK2 kinases can autoactivate through unknown mechanisms. Here, we report the crystal structures of full-length Arabidopsis thaliana SnRK2.3 and SnRK2.6 at 1.9- and 2.3-{angstrom} resolution, respectively. The structures, in combination with biochemical studies, reveal a two-step mechanism of intramolecular kinase activation that resembles the intermolecular activation of cyclin-dependent kinases. First, release of inhibition by PP2C allows the SnRK2s to become partially active because of an intramolecular stabilization of the catalytic domain by a conserved helix in the kinase regulatory domain. This stabilization enables SnRK2s to gain full activity by activation loop autophosphorylation. Autophosphorylation is more efficient in SnRK2.6, which has higher stability than SnRK2.3 and has well-structured activation loop phosphate acceptor sites that are positioned next to the catalytic site. Together, these data provide a structural framework that links ABA-mediated release of PP2C inhibition to activation of SnRK2 kinases.

Ng, Ley-Moy; Soon, Fen-Fen; Zhou, X. Edward; West, Graham M.; Kovach, Amanda; Suino-Powell, Kelly M.; Chalmers, Michael J.; Li, Jun; Yong, Eu-Leong; Zhu, Jian-Kang; Griffin, Patrick R.; Melcher, Karsten; Xu, H. Eric (Van Andel); (Scripps); (Purdue); (NU Singapore)

2014-10-02T23:59:59.000Z

353

TiSnSb a new efficient negative electrode for Li-ion batteries: mechanism investigations by operando-XRD and Mossbauer techniques  

E-Print Network (OSTI)

TiSnSb a new efficient negative electrode for Li-ion batteries: mechanism investigations We report the electrochemical study of TiSnSb towards Li, as a negative electrode for Li-ion batteries. TiSnSb can reversibly take up more than 5 lithiums per formula unit leading to reversible

Boyer, Edmond

354

Superlattice-like Ge8Sb92/Ge thin films for high speed and low power consumption phase change memory application  

Science Journals Connector (OSTI)

The amorphous-to-crystalline transitions of superlattice-like Ge8Sb92/Ge thin films were investigated through in situ film resistance measurement. X-ray reflectivity was used to measure the density change before and after phase change. The superlattice-like structure of the thin films was confirmed by using transmission electron microscopy. A picosecond laser pump–probe system was used to study the phase change speed. Phase change memory cells based on the SLL [Ge8Sb92(4 nm)/Ge(3 nm)]7 thin films were fabricated to test and verify the switching speed and operation consumption.

Yifeng Hu; Xiaoyi Feng; Jiwei Zhai; Ting Wen; Tianshu Lai; Sannian Song; Zhitang Song

2014-01-01T23:59:59.000Z

355

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Proposed Penalty (2013-SE-4901) Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) March 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Lighting Solutions: Proposed Penalty (2013-SE-4901) More Documents & Publications Watermark: Proposed Penalty (2011-SW-2908) Act One: NPCP (2013-CE-49001)

356

Capricorn Ridge (GE Energy) Wind Farm | Open Energy Information  

Open Energy Info (EERE)

Energy) Wind Farm Energy) Wind Farm Jump to: navigation, search Name Capricorn Ridge (GE Energy) Wind Farm Facility Capricorn Ridge (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Resources Developer NextEra Energy Resources Location TX Coordinates 31.838061°, -100.923965° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.838061,"lon":-100.923965,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

357

Dynamics of growth roughening and smoothening on Ge (001)  

SciTech Connect

We present reflection high-energy electron diffraction measurements of the evolution of surface morphology during molecular-beam epitaxy of Ge on Ge(001) and subsequent annealing. We find that there is a critical ''kinetic roughening'' temperature (375 /sup 0/C) above which a smooth surface remains smooth during growth, but below which it roughens during growth. Surprisingly, smooth starting surfaces never appear to roughen without bound, but reach steady-state roughnesses which depend on temperature and deposition rate. The results can be fit empirically with simple phenomenological equations based on a competition between growth roughening and growth smoothening of a ''pseudo-statistical'' surface. Furthermore, growth-roughened surfaces tend to smoothen, after growth, at a rate consistent with a third-order power-law ripening mechanism.

Chason, E.; Tsao, J.Y.; Horn, K.M.; Picraux, S.T.

1989-03-01T23:59:59.000Z

358

Dynamics of growth roughening and smoothening on Ge (001)  

SciTech Connect

We present reflection high-energy electron diffraction measurements of the evolution of surface morphology during molecular beam epitaxy of Ge on Ge (001) and subsequent annealing. We find that there is a critical ''growth roughening'' temperature (375 C) above which a smooth surface remains smooth during growth, but below which it roughens during growth. Surprisingly, smooth starting surfaces never appear to roughen without bound, but reach steady-state roughnesses which depend on temperature and deposition rate. The results can be fit empirically with simple phenomenological equations based on a competition between growth roughening and growth smoothening of a ''pseudo-statistical'' surface. Furthermore, growth-roughened surfaces tend to smoothen, after growth, at a rate consistent with an Ostwald-like ripening mechanism. 4 figs.

Chason, E.; Tsao, J.Y.; Horn, K.M.; Picraux, S.T.

1988-01-01T23:59:59.000Z

359

Proton-proton Scattering Above 3 GeV/c  

SciTech Connect

A large set of data on proton-proton differential cross sections, analyzing powers and the double-polarization parameter A{sub NN} is analyzed employing the Regge formalism. We find that the data available at proton beam momenta from 3 GeV/c to 50 GeV/c exhibit features that are very well in line with the general characteristics of Regge phenomenology and can be described with a model that includes the {rho}, {omega}, f{sub 2}, and a{sub 2} trajectories and single-Pomeron exchange. Additional data, specifically for spin-dependent observables at forward angles, would be very helpful for testing and refining our Regge model.

A. Sibirtsev, J. Haidenbauer, H.-W. Hammer S. Krewald ,Ulf-G. Meissner

2010-01-01T23:59:59.000Z

360

Meson Spectroscopy at JLab@12 GeV  

SciTech Connect

Meson, being the simplest hadronic bound system, is the ideal "laboratory" to study the interaction between quarks, to understand the role of the gluons inside hadrons and to investigate the origin of color confinement. To perform such studies it is important to measure the meson spectrum, with precise determination of resonance masses and properties, looking for rare qbar q states and for unconventional mesons with exotic quantum numbers (i.e. mesons with quantum numbers that are not compatible with a qbar q structure). With the imminent advent of the 12 GeV upgrade of Jefferson Lab a new generation of meson spectroscopy experiments will start: "Meson-Ex" in Hall B and "GLUEX" in Hall D. Both will use photo-production to explore the spectrum of mesons in the light-quark sector, in the energy range of few GeVs.

Celentano, Andrea [INFN-GENOVA

2013-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "uut ge sn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Inclusive photoproduction of strange baryons at 20 GeV  

Science Journals Connector (OSTI)

Cross sections are presented for the inclusive photoproduction of KS0, ?, ?¯, ?-, ?¯ -, ?0, and ?*±(1385) at 20 GeV. An upper limit to ?- production is also given. The data come from 284 000 hadronic events photoproduced in the SLAC 1-m hydrogen-bubble-chamber hybrid facility exposed to a nearly monochromatic, polarized 20-GeV backscattered photon beam. A comparison of the KS0, ?, ?¯, and ?- rates per inelastic event to ?±p data show that ?p rates are consistent with being higher than the ?±p rates, providing evidence of an ss¯ component of the photon. The pair cross sections for KS0KS0, KS0?, KSo?¯, and ??¯ are presented. The xF distributions of the ?, ?¯, and ?- are compared to a quark-diquark fusion model, giving information on strange-baryon photoproduction mechanisms.

K. Abe et al.

1985-12-01T23:59:59.000Z

362

Ge/Si core/multi shell heterostructure FETs  

SciTech Connect

Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.

Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

363

Structure of odd Ge isotopes with 40 < N < 50  

SciTech Connect

We have interpreted recentlymeasured experimental data of {sup 77}Ge, and also for {sup 73,75,79,81}Ge isotopes in terms of state-of-the-art shell-model calculations. Excitation energies, B(2) values, quadrupole moments and magnetic moments are compared with experimental data when available. The calculations have been performed with the recently derived interactions, namely with JUN45 and jj44b for f{sub 5/2pg9/2} space. We have also performed calculation for fpg{sub 9/2} valence space using an fpg effective interaction with {sup 48}Ca core and imposing a truncation to study the importance of the proton excitations across the Z = 28 shell in this region. The predicted results of jj44b interaction are in good agreement with experimental data.

Srivastava, P. C., E-mail: praveen.srivastava@nucleares.unam.mx; Ermamatov, M. J. [Universidad Nacional Autonoma de Mexico, Instituto de Ciencias Nucleares (Mexico)

2013-06-15T23:59:59.000Z

364

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents (OSTI)

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

365

Partners for progress in HVDC: GE and EPRI  

SciTech Connect

Since the first solid-state HVDC system was installed at Eel River in 1971, there have been enormous strides in component capability and control algorithm sophistication. Benefits include reduction in cost and power losses, smaller size and improved system stability - all achieved with the same high reliability. These improvements have been achieved through development programs which required a commitment of considerable resources made possible because GE considers HVDC an important area of growth and because EPRI has consistently supported HVDC projects. Some developments from the GE-EPRI partnership for progress in HVDC technology are already being offered and others are in the process of commercialization. These on-going programs assure that future improvements will continue to make HVDC a more attractive alternative for meeting the utility industry's needs.

Damsky, B.L. (HVDC Projects Operation, Collingdale, PA); Ladden, J.M.

1983-01-01T23:59:59.000Z

366

Detection of a Light Echo from the Otherwise Normal SN 2007af  

E-Print Network (OSTI)

We present the discovery of a light echo from SN 2007af, a normal Type Ia supernova (SN Ia) in NGC 5584. Hubble Space Telescope (HST) images taken three years post explosion reveal two separate echoes; an outer echo and extended central region, which we propose as an unresolved inner echo. Multiple images were obtained in the F160W, F350LP, F555W, and F814W using the Wide Field Camera 3. If the outer echo is produced by an interstellar dust sheet perpendicular to the line of sight, it is located ~800 pc in front of the SN. The dust for the inner echo is 0.45 pc < d < 90 pc away from the SN. The inner echo color is consistent with typical interstellar dust wavelength-dependent scattering cross-sections, while the outer echo color does not match the predictions. Both dust sheets, if in the foreground, are optically thin for scattering, with the outer echo sheet thickness consistent with the inferred extinction from peak brightness. Whether the inner echo is from interstellar or circumstellar dust is ambig...

Drozdov, D; Milne, P A; Pearcy, J; Riess, A G; Macri, L M; Bryngelson, G L; Garnavich, P M

2014-01-01T23:59:59.000Z

367

Asymmetry in the Outburst of SN 1987A Detected Using Light Echo Spectroscopy  

E-Print Network (OSTI)

We report direct evidence for asymmetry in the early phases of SN 1987A via optical spectroscopy of five fields of its light echo system. The light echoes allow the first few hundred days of the explosion to be reobserved, with different position angles providing different viewing angles to the supernova. Light echo spectroscopy therefore allows a direct spectroscopic comparison of light originating from different regions of the photosphere during the early phases of SN 1987A. Gemini multi-object spectroscopy of the light echo fields shows fine-structure in the H-alpha line as a smooth function of position angle on the near-circular light echo rings. H-alpha profiles originating from the northern hemisphere of SN 1987A show an excess in redshifted emission and a blue knee, while southern hemisphere profiles show an excess of blueshifted H-alpha emission and a red knee. This fine-structure is reminiscent of the "Bochum event" originally observed for SN 1987A, but in an exaggerated form. Maximum deviation from ...

Sinnott, B; Rest, A; Sutherland, P G; Bergmann, M

2012-01-01T23:59:59.000Z

368

Uniform hierarchical SnS microspheres: Solvothermal synthesis and lithium ion storage performance  

SciTech Connect

Graphical abstract: - Highlights: • Uniform hierarchical SnS microspheres via solvothermal reaction. • The formation process was investigated in detail. • The obtained hierarchical SnS microspheres exhibit superior capacity (1650 mAh g{sup ?1}) when used as lithium battery for the hierarchical microsphere structure. - Abstract: Hierarchical SnS microspheres have been successfully synthesized by a mild solvothermal process using poly(vinylpyrrolidone) as surfactant in this work. The morphology and composition of the microspheres were investigated by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The influence of reaction parameters, such as sulfur sources, reaction temperature and the concentration of PVP, on the final morphology of the products are investigated. On the basis of time-dependent experiments, the growth mechanism has also been proposed. The specific surface area of the 3D hierarchitectured SnS microspheres were investigated by using nitrogen adsorption and desorption isotherms. Lithium ion storage performances of the synthesized materials as anodes for Lithium-ion battery were investigated in detail and it exhibits excellent electrochemical properties.

Fang, Zhen, E-mail: fzfscn@mail.ahnu.edu.cn; Wang, Qin; Wang, Xiaoqing; Fan, Fan; Wang, Chenyan; Zhang, Xiaojun

2013-11-15T23:59:59.000Z

369

Effect of Sn and Ca doping on the corrosion of Pb anodes in lead acid batteries  

E-Print Network (OSTI)

Effect of Sn and Ca doping on the corrosion of Pb anodes in lead acid batteries Dragan Slavkova of lead anodes used in lead acid batteries. However, one drawback of these materials is their increased corrosion rate as compared to pure lead anodes. In the present investigation, the dissolution of Pb

Popov, Branko N.

370

R and D of Nb(3)Sn accelerator magnets at Fermilab  

SciTech Connect

Fermilab is developing and investigating different high-field magnet designs for present and future accelerators. The magnet R&D program was focused on the 10-12 T accelerator magnets based on Nb{sub 3}Sn superconductor and explored both basic magnet technologies for brittle superconductors--wind-and-react and react-and-wind. Magnet design studies in support of LHC upgrades and VLHC are being performed. A series of 1-m long single-bore models of cos-theta Nb{sub 3}Sn dipoles based on wind-and-react technique was fabricated and tested. Three 1-m long flat racetracks and the common coil dipole model, based on a single-layer coil and wide reacted Nb{sub 3}Sn cable, have also been fabricated and tested. Extensive theoretical studies of magnetic instabilities in Nb{sub 3}Sn strands, cable and magnet were performed which led to successful 10 T dipole model. This paper presents the details of the Fermilab's high field accelerator magnet program, reports its status and major results, and formulates the program next steps.

Zlobin, A.V.; Ambrosio, G.; Andreev, N.; Barzi, E; Bordini, B.; Bossert, R.; Carcagno, R.; Chichili, D.R.; DiMarco, J.; Elementi, L.; Feher, S.; Kashikhin, V.S.; Kashikhin, V.V.; Kephart, R.; Lamm, M.; Limon, P.J.; Novitski, I.; Orris, D.; Pischalnikov, Yu.; Schlabach, P.; Stanek, R.; /Fermilab; ,

2004-11-01T23:59:59.000Z

371

High thermoelectric performance by resonant dopant indium in nanostructured SnTe  

E-Print Network (OSTI)

From an environmental perspective, lead-free SnTe would be preferable for solid-state waste heat recovery if its thermoelectric figure-of-merit could be brought close to that of the lead-containing chalcogenides. In this ...

Liao, Bolin

372

Prospects and performance limitations for Cu–Zn–Sn–S–Se photovoltaic technology  

Science Journals Connector (OSTI)

...technology, establishing key process parameters such as optimal...devices and entering into commercialization-[1]. However, for CZTSSe...a faster co-evaporation process in which Sn loss could be...the whole high-temperature process, including part of the cooling...

2013-01-01T23:59:59.000Z

373

Adsorption structure and doping effect of azidotrimethyltin on graphene , S.N. Yang b  

E-Print Network (OSTI)

Adsorption structure and doping effect of azidotrimethyltin on graphene J. Choi a , S.N. Yang b , K Graphene Chemical functionalization Synchrotron Photoemission spectroscopy a b s t r a c t The adsorption demonstrate the variation of characteristic of graphene induced by the chemical functionalized molecule as we

Kim, Sehun

374

Nonempirical calculations on potential surfaces for gas-phase SN2 nucleophilic substitution reactions  

Science Journals Connector (OSTI)

A method has been derived for the analytic description of potential surfaces in natural reaction coordinates as a preliminary stage in researching the dynamics of SN2-type reactions X?+CH3Y?CH3X+Y?; a potential s...

V. M. Ryaboi

375

Nucleophilic displacement (SN2) reactions in binary van der waals clusters induced by resonant electron capture  

Science Journals Connector (OSTI)

The nucleophilic displacement reactions F? + CH3Y ? CH3F + Y? (Y = Cl, Br, I) and Cl? + \\{OCH3Br\\} ? \\{CH3Cl\\} + Br? are studied in a crossed beam experiment where binary clusters produced by supersonic beam expansion interact with a monochromatized electron beam. The nucleophile (F?, Cl?) is generated by resonant dissociative electron attachment (DA) from one component of the cluster and then undergoes an SN2 reaction with the second component (the “substrate” molecule CH3Y). Y? ions carrying the DA resonance profile of the nucleophile are then identified as products of the corresponding SN2 reaction. Although isolated \\{CH3Cl\\} has an unmeasurably low DA (Cl?) cross section (SN2 reactions. In addition, the product ion Y? solvated by CH3Y molecules and also ion-molecule complexes (FCH3Y)? involved in the reaction are observed within the DA resonance of the nucleophile. The relative intensity of the naked product ion with respect to the ion-molecule complexes is a mirror of the exothermicity of the corresponding SN2 reaction. Because in DA the nuclephile can be created with a defined amount of translational energy, the potential use of the present method to derive information on the energy dependence of the reaction efficiency is discussed.

Lars Lehmann; Eugen Illenberger

1999-01-01T23:59:59.000Z

376

SELECTIVE FILTER FOR SnO2 BASED GAS SENSOR : APPLICATION TO HYDROGEN TRACE DETECTION  

E-Print Network (OSTI)

are requested in several fields such as applications [1], fuel cell [2], radioactive waste storage and diverse selectivity of a sensor includes the addition of a catalyst to the tin oxide powder. In the case of hydrogen1 SELECTIVE FILTER FOR SnO2 BASED GAS SENSOR : APPLICATION TO HYDROGEN TRACE DETECTION G

Paris-Sud XI, Université de

377

Cu2ZnSnS4 nanocrystals and graphene quantum dots for photovoltaics Xukai Xinab  

E-Print Network (OSTI)

Cu2ZnSnS4 nanocrystals and graphene quantum dots for photovoltaics Jun Wang,a Xukai Xinab advances in the synthesis and utilization of CZTS nanocrystals and colloidal GQDs for photovoltaics emerged to achieve low cost, high perfor- mance photovoltaics, including organic solar cells,2­6 dye

Lin, Zhiqun

378

The reaction mechanism of SnSb and Sb thin film anodes for Na-ion batteries studied by X-ray diffraction, 119Sn and 121Sb M ssbauer spectroscopies  

SciTech Connect

The electrochemical reaction of Sb and SnSb anode materials with Na results in the formation of amorphous materials. To understand the resulting phases and electrochemical capacities we studied the reaction products local order using 119Sn and 121Sb M ssbauer spectroscopies in conjunction with measurements performed on model powder compounds of Na-Sn and Na-Sb to further clarify the reactions steps. For pure Sb the discharge (sodiation) starts with the formation of an amorphous phase composed of atomic environments similar to those found in NaSb, and proceeds further by the formation of environments similar to that present in Na3Sb. The reversible reaction takes place during a large portion of the charge process. At full charge the anode material still contains a substantial fraction of Na, which explains the lack of recrystallization into crystalline Sb. The reaction of SnSb yields Na3Sb crystalline phase at full discharge at higher temperatures (65 and 95 C) while the room temperature reaction yields amorphous compounds. The electrochemically-driven, solid-state amorphization reaction occurring at room temperature is governed by the simultaneous formation of Na-coordinated Sn and Sb environments, as monitored by the decrease (increase) of the 119Sn (121Sb) M ssbauer isomer shifts. Overall, the monitoring of the hyperfine parameters enables to correlate the changes in Na content to the individual Sn and Sb local chemical environments.

Baggetto, Loic [ORNL; Hah, Hien-Yoong [University of Tennessee (UT) Space Institute; Jumas, Dr. Jean-Claude [Institut Charles Gerhardt, University of Montpellier II, FRANCE; Johnson, Prof. Dr. Charles E. [University of Tennessee (UT) Space Institute; Johnson, Jackie A. [University of Tennessee (UT) Space Institute; Keum, Jong Kahk [ORNL; Bridges, Craig A [ORNL; Veith, Gabriel M [ORNL

2014-01-01T23:59:59.000Z

379

Milford Wind Corridor Phase I (GE Energy) | Open Energy Information  

Open Energy Info (EERE)

form form View source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon » Milford Wind Corridor Phase I (GE Energy) Jump to: navigation, search Name Milford Wind Corridor Phase I (GE Energy) Facility Milford Wind Corridor Phase I (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner First Wind Developer First Wind Energy Purchaser Southern California Public Power Authority Location Milford UT Coordinates 38.52227°, -112.935262° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":38.52227,"lon":-112.935262,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

380

GeV emission from Gamma-Ray Burst afterglows  

E-Print Network (OSTI)

We calculate the GeV afterglow emission expected from a few mechanisms related to GRBs and their afterglows. Given the brightness of the early X-ray afterglow emission measured by Swift/XRT, GLAST/LAT should detect the self-Compton emission from the forward-shock driven by the GRB ejecta into the circumburst medium. Novel features discovered by Swift in X-ray afterglows (plateaus and chromatic light-curve breaks) indicate the existence of a pair-enriched, relativistic outflow located behind the forward shock. Bulk and inverse-Compton upscattering of the prompt GRB emission by such outflows provide another source of GeV afterglow emission detectable by LAT. The large-angle burst emission and synchrotron forward-shock emission are, most likely, too dim at high photon energy to be observed by LAT. The spectral slope of the high-energy afterglow emission and its decay rate (if it can be measured) allow the identification of the mechanism producing the GeV transient emission following GRBs.

A. Panaitescu

2008-01-10T23:59:59.000Z

Note: This page contains sample records for the topic "uut ge sn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Axial Ge/Si nanowire heterostructure tunnel FETs.  

SciTech Connect

Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx}20{sup o} off the <111> axis at about 300 nm away from the Ge/Si interface. This provides a natural marker for placing the gate contact electrodes and gate metal at appropriate location for desired high-on current and reduced ambipolarity as shown in Fig. 2. The 1D heterostructures allow band-edge engineering in the transport direction, not easily accessible in planar devices, providing an additional degree of freedom for designing tunnel FETs (TFETs). For instance, a Ge tunnel source can be used for efficient electron/hole tunneling and a Si drain can be used for reduced back-tunneling and ambipolar behavior. Interface abruptness on the other hand (particularly for doping) imposes challenges in these structures and others for realizing high performance TFETs in p-i-n junctions. Since the metal-semiconductor contacts provide a sharp interface with band-edge control, we use properly designed Schottky contacts (aided by 3D Silvaco simulations) as the tunnel barriers both at the source and drain and utilize the asymmetry in the Ge/Si channel bandgap to reduce ambipolar transport behavior generally observed in TFETs. Fig. 3 shows the room-temperature transfer curves of a Ge/Si heterostructure TFET (H-TFET) for different V{sub DS} values showing a maximum on-current of {approx}7 {micro}A, {approx}170 mV/decade inverse subthreshold slope and 5 orders of magnitude I{sub on}/I{sub off} ratios for all V{sub DS} biases considered here. This high on-current value is {approx}1750 X higher than that obtained with Si p-i-n{sup +} NW TFETs and {approx}35 X higher than that obtained with CNT TFET. The I{sub on}/I{sub off} ratio and inverse subthreshold slope compare favorably to that of Si {approx} 10{sup 3} I{sub on}/I{sub off} and {approx} 800 mV/decade SS{sup -1} but lags behind those of CNT TFET due to poor PECVD nitride gate oxide quality ({var_epsilon}{sub r} {approx} 3-4). The asymmetry in the Schottky barrier heights used here eliminates the stringent requirements of abrupt doped interfaces used in p-i-n based TFETs, which is hard to achieve both in thin-film and

Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

2010-03-01T23:59:59.000Z

382

HOST GALAXY PROPERTIES OF THE SUBLUMINOUS GRB 120422A/SN 2012bz  

SciTech Connect

GRB 120422A is a nearby (z = 0.283) long-duration gamma-ray burst (LGRB) detected by Swift with E {sub {gamma},iso} {approx} 4.5 Multiplication-Sign 10{sup 49} erg. It is also associated with the spectroscopically confirmed broad-lined Type Ic SN 2012bz. These properties establish GRB 120422A/SN 2012bz as the sixth and newest member of the class of subluminous GRBs supernovae (SNe). Observations also show that GRB 120422A/SN 2012bz occurred at an unusually large offset ({approx}8 kpc) from the host galaxy nucleus, setting it apart from other nearby LGRBs and leading to speculation that the host environment may have undergone prior interaction activity. Here, we present spectroscopic observations using the 6.5 m Magellan telescope at Las Campanas. We extract spectra at three specific locations within the GRB/SN host galaxy, including the host nucleus, the explosion site, and the 'bridge' of diffuse emission connecting these two regions. We measure a metallicity of log(O/H) + 12 = 8.3 {+-} 0.1 and a star formation rate (SFR) per unit area of 0.08 M {sub Sun} yr{sup -1} kpc{sup -2} at the host nucleus. At the GRB/SN explosion site we measure a comparable metallicity of log(O/H) + 12 = 8.2 {+-} 0.1 but find a much lower SFR per unit area of 0.01 M {sub Sun} yr{sup -1} kpc{sup -2}. We also compare the host galaxy of this event to the hosts of other LGRBs, including samples of subluminous LGRBs and cosmological LGRBs, and find no systematic metallicity difference between the environments of these different subtypes.

Levesque, Emily M. [CASA, Department of Astrophysical and Planetary Sciences, University of Colorado 389-UCB, Boulder, CO 80309 (United States); Chornock, Ryan; Soderberg, Alicia M.; Berger, Edo; Lunnan, Ragnhild, E-mail: Emily.Levesque@colorado.edu [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States)

2012-10-20T23:59:59.000Z

383

SN 2003du: Signatures of the Circumstellar Environment in a Normal Type Ia Supernova?  

E-Print Network (OSTI)

We present observations of the Type Ia supernova 2003du and report the detectionof an unusual, high-velocity component in the Ca II infrared triplet, similar tofeatures previously observed in SN 2000cx and SN 2001el. This feature exhibits a large expansion velocity (~18,000 km/s) which is nearly constant between -7 and +2 days relative to maximum light, and disappears shortly thereafter. Otherthan this feature, the spectral evolution and light curve resemble those of a normal SN Ia. We find that the Ca II feature can plausibly be caused by a dense shell formed when circumstellar material of solar abundance is overrun by the rapidly expanding outermost layers of the SN ejecta. Model calculations show that the optical and infrared spectra are remarkably unaffected by the circumstellar interaction. In particular, no hydrogen lines are detectable in either absorption or emission. The only qualitatively different features are the strong, high-velocity feature in the Ca II IR-triplet, and a somewhat weaker O I feature near 7,300 AA. The morphology and time evolution of these features provide an estimate for the amount of accumulated matter and an indication of the mixing in the dense shell. We apply these diagnostic tools to SN 2003du and infer that about 2 x 10^{-2} M_sun of solar abundance material may have accumulated in a circumstellar shell prior to the observations. Furthermore, the early light curve data imply that the circumstellar material was originally very close to the progenitor system, perhaps from an accretion disk, Roche lobe or common envelope.

C. L. Gerardy; P. Hoeflich; R. A. Fesen; G. H. Marion; K. Nomoto; R. Quimby; B. E. Schaefer; L. Wang; J. C. Wheeler

2003-09-23T23:59:59.000Z

384

ASYMMETRY IN THE OUTBURST OF SN 1987A DETECTED USING LIGHT ECHO SPECTROSCOPY  

SciTech Connect

We report direct evidence for asymmetry in the early phases of SN 1987A via optical spectroscopy of five fields of its light echo system. The light echoes allow the first few hundred days of the explosion to be reobserved, with different position angles providing different viewing angles to the supernova. Light echo spectroscopy therefore allows a direct spectroscopic comparison of light originating from different regions of the photosphere during the early phases of SN 1987A. Gemini multi-object spectroscopy of the light echo fields shows fine structure in the H{alpha} line as a smooth function of position angle on the near-circular light echo rings. H{alpha} profiles originating from the northern hemisphere of SN 1987A show an excess in redshifted emission and a blue knee, while southern hemisphere profiles show an excess of blueshifted H{alpha} emission and a red knee. This fine structure is reminiscent of the 'Bochum event' originally observed for SN 1987A, but in an exaggerated form. Maximum deviation from symmetry in the H{alpha} line is observed at position angles 16 Degree-Sign and 186 Degree-Sign , consistent with the major axis of the expanding elongated ejecta. The asymmetry signature observed in the H{alpha} line smoothly diminishes as a function of viewing angle away from the poles of the elongated ejecta. We propose an asymmetric two-sided distribution of {sup 56}Ni most dominant in the southern far quadrant of SN 1987A as the most probable explanation of the observed light echo spectra. This is evidence that the asymmetry of high-velocity {sup 56}Ni in the first few hundred days after explosion is correlated to the geometry of the ejecta some 25 years later.

Sinnott, B.; Welch, D. L.; Sutherland, P. G. [Department of Physics and Astronomy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)] [Department of Physics and Astronomy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Rest, A. [Space Telescope Science Institute, Baltimore, MD 21218 (United States)] [Space Telescope Science Institute, Baltimore, MD 21218 (United States); Bergmann, M.

2013-04-10T23:59:59.000Z

385

Enhanced Ge/Si(001) island areal density and self-organization due to P predeposition  

SciTech Connect

The predeposition of P, with coverages {theta}{sub P} ranging from 0 to 1 ML, on Si(001) significantly increases both the areal density and spatial self-organization of Ge islands grown by gas-source molecular beam epitaxy from hydride precursors. The Ge island density {rho}{sub Ge} initially increases with {theta}{sub P}, reaching a maximum of 1.4 x 10{sup 10} cm{sup -2} at {theta}{sub P} = 0.7 ML, a factor of four times higher than on bare Si(001) under the same deposition conditions, before decreasing at higher P coverages. The increase in {rho}{sub Ge}({theta}{sub P}) is due to a corresponding decrease in Ge adatom mean free paths resulting from passivation of surface dangling bonds by adsorbed pentavalent P atoms which, in addition, leads to surface roughening and, therefore, higher Ge coverages at constant Ge{sub 2}H{sub 6} dose. As {theta}{sub P} (and hence, {rho}{sub Ge}) increases, so does the degree of Ge island ordering along <100> directions due to the anisotropic strain field surrounding individual islands. Similar results are obtained for Ge island growth on P-doped Si(001) layers where strong P surface segregation provides partial monolayer coverage prior to Ge deposition.

Cho, B.; Bareno, J.; Petrov, I.; Greene, J. E. [Materials Science Department and the Frederick-Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Ave., Urbana, Illinois 61801 (United States)

2011-05-01T23:59:59.000Z

386

Aqueous germanate ion solution promoted synthesis of worm-like crystallized Ge  

Science Journals Connector (OSTI)

This work demonstrates that it is possible to synthesize crystallized Ge nanostructures directly in an aqueous medium under ambient conditions by using widely available GeO2 (in the form of germanate ions) as a precursor. The reaction of germanate ions with NaBH4 in an aqueous medium resulted in highly hydrogenated Ge that could be transformed into crystallized Ge after an air-drying treatment. The NaBH4/GeO2 molar ratio, reaction time and drying temperature were optimized for the synthesis of crystallized Ge products. Furthermore, the reaction time has an influence on the size and shape of the final crystallized Ge products. A reaction time of 12 h could result in crystallized Ge powder samples that contain ultra-small (5–20 nm) particles and larger (50–100 nm) particles. By controlling the reaction time to 24 h, a Ge powder product consisting of worm-like crystallized Ge nanostructures with diameters of 10–80 nm and lengths up to 1000 nm was obtained. The possible reaction and growth mechanisms involved in this method were investigated. This new synthetic route may be a good candidate for synthesizing a wide variety of crystallized Ge nanomaterials and devices due to its low cost, low safety risk, facileness, high yield (above 70% and in gram scale) and convenience for adding other chemicals (i.e. dopants or morphology modifying agents) into the reaction system.

Chengbin Jing; Xiaodan Zang; Wei Bai; Junhao Chu; Aiyun Liu

2009-01-01T23:59:59.000Z

387

Transverse stress effect on the critical current of internal tin and bronze process Nb{sub 3}Sn superconductors  

SciTech Connect

The effect of transverse stress on the critical current density, J{sub c}, has been shown to be significant in bronze process Nb{sub 3}Sn, with the onset of significant degradation at about 50 Mpa. In an applied field of 10 T, the magnitude of the effect is about seven times larger for transverse stress than for axial tensile stress. In a subsequent study, similar results were observed in another bronze process Nb{sub 3}Sn conductor made by a different manufacturer. The mechanism accounting for the transverse stress effect and its large magnitude compared with the axial tensile effect is still the subject of speculation. In an attempt to better understand the nature of the effect, The authors have undertaken a series of experiments to determine whether the transverse stress effect depends on the grain morphology of the Nb{sub 3}Sn reaction layer in the superconductor. To do this, the authors have measured the effect in an internal tin conductor with excess tin, which yields a more equiaxed Nb{sub 3}Sn grain morphology than for bronze process Nb{sub 3}Sn, where the grains are more columnar. The results for the effect of transverse compression on the J{sub c} of a round bronze process Nb{sub 3}Sn wire are given. The data are probably applicable to a wide variety of Nb{sub 3}Sn conductors for magnet engineering.

Ekin, J.W.; Bray, S.L. [National Inst. of Standards and Technology, Boulder, CO (United States); Danielson, P.; Smathers, D. [Teledyne Wah Chang, Albany, OR (United States); Sabatini, R.L.; Suenaga, M. [Brookhaven National Lab., Upton, NY (United States)

1989-12-31T23:59:59.000Z

388

Band-structure calculations for Ba6Ge25 and Ba4Na2Ge25 clathrates  

Science Journals Connector (OSTI)

Electronic band structures for Ba6Ge25 and Ba4Na2Ge25 clathrates are calculated using linear muffin-tin orbital method within the local-density approximation. It is found that barium states strongly contribute to the density of states at the Fermi level and thus can influence the transport properties of the compounds. A sharp peak of the density of states is found just at the Fermi level. It is also shown that the shifting of barium atoms toward experimentally deduced split positions in Ba6Ge25 produces a splitting of this peak which may be interpreted as a band Jahn-Teller effect. If the locking of the barium atoms at the observed structural phase transition is assumed, this reduction of the density of states at the Fermi level can account for the experimentally observed decrease of the magnetic susceptibility and electrical resistivity at the phase transition, and the values of density of states are in agreement with low-temperature specific-heat measurements and variation of superconducting transition temperature with pressure.

Ivica Zerec; Alexander Yaresko; Peter Thalmeier; Yuri Grin

2002-07-29T23:59:59.000Z

389

Enhancement in Ethanol Electrooxidation by SnO(x) Nanoislands Grown on Pt(111): Effect of Oxide-Metal Interface Sites  

SciTech Connect

An integrated surface science and electrochemistry approach has been used to prepare and characterize SnO{sub x}/Pt(111) model catalysts and evaluate their electrochemical activity for the ethanol oxidation reaction (EOR). Nanoislands of SnO{sub x} are deposited onto the Pt(111) by reactive layer assisted deposition in which Sn metal is vapor deposited onto a Pt(111) surface precovered by NO{sub 2}. X-ray photoelectron spectroscopy (XPS) shows that the SnO{sub x} islands are highly reduced with Sn{sup 2+} being the dominant chemical species. After exposing the SnO{sub x}/Pt(111) surface to H{sub 2}O or an electrolyte solution, XPS provides evidence for a significant amount of H{sub 2}O/OH adsorbed on the reduced SnO{sub x} surfaces. Electrochemical testing reveals that the catalytic performance of Pt(111) toward ethanol electrooxidation is significantly enhanced with SnO{sub x} islands added onto the surface. The enhanced EOR activity is tentatively attributed to the efficient removal of CO{sub ads}-like poisoning species at Pt sites by oxygen-containing species that are readily formed on the SnO{sub x} nanoislands. Moreover, the strong dependence of the EOR activity on SnO{sub x} coverage provides experimental evidence for the importance of SnO{sub x}-Pt interface sites in the EOR.

Zhou, W.P.; Axnanda, S.; White, M.G.; Adzic, R.R.; Hrbek, J.

2011-08-25T23:59:59.000Z

390

Specific features of self-compensation in Er{sub x}Sn{sub 1-x}Se solid solutions  

SciTech Connect

The effect of doping and degree of compensation on the conductivity activation energy {Delta}E{sub i} in Er{sub x}Sn{sub 1-x}Se has been investigated. The carrier concentration decreases at a low doping level in the case of low and moderate compensations. It is found that, beginning with x {>=} 0.005 at % Er, carriers in the solid solutions under study change sign, depending on the amount of substituted erbium in the SnSe samples that is in equilibrium with the selenium phase. This phenomenon can be explained in terms of the concepts of the self-compensation of donors in the Sn sublattice.

Huseynov, J. I., E-mail: cih_58@mail.ru; Murguzov, M. I.; Ismayilov, Sh. S. [Azerbaijan State Pedagogical University (Azerbaijan)

2013-03-15T23:59:59.000Z

391

Determination of70Ge(n,p)70Ga and74Ge(n,p)74Ga reaction cross sections for a fission neutron spectrum  

Science Journals Connector (OSTI)

The fission neutron spectrum averaged cross-sections for the reactions70Ge(n,p)70Ga and74Ge(n,p)74Ga have been determined. The averages of four determinations are, respectively, (3.10±0.30) mb and (0.00938±0.0005...

I. M. Cohen; A. J. Kestelman; J. C. Furnari…

1996-03-14T23:59:59.000Z

392

Surface passivation of p-type Ge substrate with high-quality GeN{sub x} layer formed by electron-cyclotron-resonance plasma nitridation at low temperature  

SciTech Connect

We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeN{sub x}/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeN{sub x}/Ge interface properties. The GeN{sub x}/Ge formed at room temperature and treated by PMA at 400 deg. C exhibits the best interface properties with an interface trap density of 1 x 10{sup 11 }cm{sup -2 }eV{sup -1}. The GeN{sub x}/Ge interface is unpinned and the Fermi level at the Ge surface can move from the valence band edge to the conduction band edge.

Fukuda, Yukio; Otani, Yohei [Tokyo University of Science, Suwa, 5000-1 Toyohira, Chino, Nagano 391-0292 (Japan); Okamoto, Hiroshi; Iwasaki, Takuro; Ono, Toshiro [Hirosaki University, 3 Bunkyo-cho, Hirosaki, Aomori 036-8561 (Japan)

2011-09-26T23:59:59.000Z

393

Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeOx) Films  

SciTech Connect

Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, ? = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing ? from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of ? is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (?) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (? = 550 nm) to 2.62 and occurs at ? = 0.25. Finally n drops to 1.60 for ? = 0.50–1.00, where the films become GeO2. A detailed correlation between ?, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

Murphy, Neil R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, Chintalapalle V.

2014-03-18T23:59:59.000Z

394

Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature  

Science Journals Connector (OSTI)

Structural properties of SiGe/Si single wells are studied by double-crystal X-ray diffraction. Four SiGe/Si single wells have been grown on Si (0 0 1) at 750°C by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature. Using dynamic theory, together with kinematic theory and the specific growth procedure adopted, structural parameters in the multilayer structure are determined precisely. The results are compared with those obtained from PL and XTEM as well as AES measurements. It is found that disilane adsorption is dependent on cracking temperature as well as Ge incorporation. Disilane adsorption is increased by cracking disilane while it decreased with Ge incorporation

J.P. Liu; M.Y. Kong; D.D. Huang; J.P. Li; D.Z. Sun

1998-01-01T23:59:59.000Z

395

Measurements of ISGMR in Sn, Cd and Pb isotopes and the asymmetry of nuclear matter incompressibility  

SciTech Connect

The compression-mode isoscalar giant monopole resonance (ISGMR) has been studied in the Sn, Cd and Pb isotopes using inelastic scattering of 400 MeV {alpha}-particles at extreme forward angles, including 0 deg. We have obtained completely 'background-free' inelastic-scattering spectra for the Sn, Cd, and Pb isotopes for a wide angular and excitation-energy range. The various giant resonances excited with different transferred angular momenta were extracted by a multipole-decomposition analysis (MDA). It was found that the centroid energies of the ISGMR in Sn isotopes are significantly lower than the theoretical predictions. The K{sub {tau}} in the empirical expression for the nuclear incompressibility has been determined to be K{sub {tau}} = -550{+-}100 MeV for the Sn isotopes. The extracted value for the Cd isotopes is K{sub {tau}} = -480{+-}100 MeV. These numbers are consistent with values of K{sub {tau}} = -370{+-}120 MeV obtained from an analysis of the isotopic transport ratios in medium-energy heavy-ion reactions, K{sub {tau}} -500{sub -100}{sup +120} MeV obtained from constraints placed by neutron-skin data from anti-protonic atoms across the mass table, and K{sub {tau}} = -500{+-}50 MeV obtained from theoretical calculations using different Skyrme interactions and relativistic mean field (RMF) Lagrangians. Stringent constraints on interactions employed in nuclear structure calculations are obtained on the basis of the experimentally determined values for K{sub {infinity}} and K{sub {tau}}. These parameters constrain as well the equation of state (EOS) of nuclear matter. However, a significant discrepancy still remains. The ISGMR positions in Sn and Cd isotopes are systematically lower than the predictions obtained on basis of determined from the ISGMR in {sup 208}Pb. This raises the question ''Why are Sn and Cd nuclei so soft?''. For a clue to solve the problem, we discuss the preliminary results on the exact positions of the ISGMR in {sup 204,206,208}Pb.

Fujiwara, M.; Hashimoto, H.; Nakanishi, K.; Okumura, S.; Yosoi, M. [Research Center for Nuclear Physics, Osaka University, Mihogaoka 10-1, Ibaraki, Osaka 567-0047 (Japan); Li, T.; Patel, D.; Garg, U.; Berg, G. P. A.; Liu, Y.; Marks, R.; Matta, J.; Nayak, B. K.; Madhusudhana-Rao, P. V.; Long, A.; Sault, K.; Talwar, R. [JINA and Physics Department, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Ichikawa, M.; Itoh, M.; Matsuo, R. [Cyclotron and Radioisotope Center, Tohoku University, Sendai 980-8578 (Japan)

2011-10-28T23:59:59.000Z

396

Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)  

SciTech Connect

Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

2008-10-31T23:59:59.000Z

397

Synthesis, crystal structure and properties of [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} with mixed-valent Ge centers  

SciTech Connect

One new manganese thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} (dien=diethylenetriamine), was prepared under mild solvothermal conditions and structurally and spectroscopically characterized. The title compound crystallizes in the orthorhombic system, chiral space group P2{sub 1}2{sub 1}2{sub 1} (no. 19) with a=9.113(4) Å, b=12.475(5) Å, c=17.077(7) Å, V=1941.5(15) Å{sup 3} and Z=4. Its structure features a three-dimensional (3D) network composed of a one-dimensional (1D) [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain and a [(dien){sub 2}Mn]{sup 2+} complex interconnected via various hydrogen bonds. The most interesting structural feature of the compound is the presence of two different oxidation states of germanium centers in the 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain, which is also supported by the result of X-ray photoelectron spectroscopy measurement. The optical property of the title compound has also been studied by UV–vis spectra. - Graphical abstract: One new thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4}, contains a one-dimensional [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain with two different oxidation states of germanium centers. Display Omitted - Highlights: • One new manganese thiogermanate [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} was prepared. • The compound features 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain composed of [Ge{sup II}S{sub 4}] and [Ge{sup IV}S{sub 4}] tetrahedra. • The first example of inorganic–organic hybrid thiogermanates with mixed valent Ge centers.

Yue, Cheng-Yang; Yuan, Zhuang-Dong; Zhang, Lu-Ge; Wang, Ya-Bai; Liu, Guo-Dong; Gong, Liao-Kuo [Key Laboratory of Inorganic Chemistry in Universities of Shandong, Department of Chemistry and Chemical Engineering, Jining University, Qufu, Shandong 273155 (China); Lei, Xiao-Wu, E-mail: xwlei_jnu@163.com [Key Laboratory of Inorganic Chemistry in Universities of Shandong, Department of Chemistry and Chemical Engineering, Jining University, Qufu, Shandong 273155 (China); State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, Shandong 250100 (China)

2013-10-15T23:59:59.000Z

398

Formation of nickel germanide on SiO{sub 2}-capped n-Ge to lower its Schottky barrier height  

SciTech Connect

In this Letter, NiGe/SiO{sub 2}/n-Ge ohmic contacts were demonstrated with Ge, rather than Ni, diffusion through the ion-implanted SiO{sub 2} films to form NiGe. The equivalent Schottky barrier height reduced from 0.58?eV for NiGe/n-Ge to ohmic contact. The anomalous diffusion behavior and accumulation of Ge in the SiO{sub 2} near the NiGe/SiO{sub 2} interface can be explained by vacancy-enhanced Ge diffusion. It is proposed that the presence of vacancies and Ge atoms embedded in the SiO{sub 2} layer play a significant role in the current enhancement by generation of multiple levels in the SiO{sub 2} band gap.

Lin, Guangyang; Tang, Mengrao; Li, Cheng, E-mail: lich@xmu.edu.cn; Huang, Shihao; Lu, Weifang; Wang, Chen; Yan, Guangming; Chen, Songyan [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)] [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)

2013-12-16T23:59:59.000Z

399

Forward charge asymmetry in 20-GeV gammap reactions  

Science Journals Connector (OSTI)

Fast forward particles photoproduced in 20-GeV interactions on a hydrogen target are shown to be preferentially positive, the asymmetry increasing with transverse momentum and Feynman x. Evidence is given that this effect is not due to forward-going target fragments. A model in which production from the photon of a forward-going spectator u is preferred over a ?, due to a higher probability for interactions of antiquarks with the proton constituents, is shown to be qualitatively consistent with the data.

V. R. O’Dell et al.

1987-07-01T23:59:59.000Z

400

Diamond turning of Si and Ge single crystals  

SciTech Connect

Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

Blake, P.; Scattergood, R.O.

1988-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "uut ge sn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

6 GeV light source project cost estimating procedure  

SciTech Connect

To maintain uniformity in estimating the cost requirements of the various components of the 6 GeV Light Source, the following procedure will be used by all the task groups. The procedure uses a Work Breakdown Structure (VBS) to break down the project into manageable, easy to estimate, components. The project is first broken down into major tasks or categories. Then each major division is continuously subdivided until the desired level of detail is achieved. This can be shown best by using the example of the WBS of the Aladdin Upgrade Project, excerpts of which are included in Appendix A.

NONE

1985-10-23T23:59:59.000Z

402

An 8-GeV Synchrotron-Based Proton Driver  

SciTech Connect

In January 2002, the Fermilab Director initiated a design study for a high average power, modest energy proton facility. Such a facility is a possible candidate for a construction project in the U.S. starting in the middle of this decade. The key technical element is a new machine, dubbed the ''Proton Driver,'' as a replacement of the present Booster. The study of an 8-GeV synchrotron-based proton driver has been completed and published. This paper will give a summary report, including machine layout and performance, optics, beam dynamics issues, technical systems design, civil construction, cost estimate and schedule.

Weiren Chou

2003-06-04T23:59:59.000Z

403

Variations of ionization potential and electron affinity as a function of surface orientation: The case of orthorhombic SnS  

SciTech Connect

We investigated the dependence of absolute SnS band-edge energies on surface orientation using density functional theory and GW method for all surfaces with Miller indices ?3?h,k,l?3 and found variations as large as 0.9?eV as a function of (hkl). Variations of this magnitude may affect significantly the performance of photovoltaic devices based on polycrystalline SnS thin-films and, in particular, may contribute to the relatively low measured open circuit voltage of SnS solar cells. X-ray diffraction measurements confirm that our thermally evaporated SnS films exhibit a wide distribution of different grain orientations, and the results of Kelvin force microscopy support the theoretically predicted variations of the absolute band-edge energies.

Stevanovi?, Vladan, E-mail: vstevano@mines.edu [Colorado School of Mines, Golden, Colorado 80401 (United States); National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Hartman, Katy; Jaramillo, R.; Buonassisi, Tonio [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Ramanathan, Shriram [Harvard University, Cambridge, Massachusetts 02138 (United States); Graf, Peter [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2014-05-26T23:59:59.000Z

404

Hybrid of Co3Sn2@Co Nanoparticles and Nitrogen-Doped Graphene as a Lithium Ion Battery Anode  

Science Journals Connector (OSTI)

Hybrid of Co3Sn2@Co Nanoparticles and Nitrogen-Doped Graphene as a Lithium Ion Battery Anode ... VO2 Nanowires Assembled into Hollow Microspheres for High-Rate and Long-Life Lithium Batteries ...

Nasir Mahmood; Chenzhen Zhang; Fei Liu; Jinghan Zhu; Yanglong Hou

2013-10-16T23:59:59.000Z

405

In Situ Generation of Few-Layer Graphene Coatings on SnO2-SiC...  

NLE Websites -- All DOE Office Websites (Extended Search)

In Situ Generation of Few-Layer Graphene Coatings on SnO2-SiC Core-Shell Nanoparticles for High-Performance Lithium-Ion Storage. In Situ Generation of Few-Layer Graphene Coatings...

406

Influence of strontium addition on the mechanical properties of gravity cast Mg-3Al-3Sn alloy  

SciTech Connect

In this study, the effect of strontium (0.01, 0.1, 0.5, 1 wt%) addition on the microstructure and mechanical properties of the gravity cast Mg-3Al-3Sn alloy were investigated. X-ray diffractometry revealed that the main phases are ??Mg, ??Mg{sub 17}Al{sub 12} and Mg{sub 2}Sn in the Mg-3Al-3Sn alloy. With addition The tensile testing results showed that the yield and ultimate tensile strength and elongation of Mg-3Al-3Sn alloy increased by adding Sr up to 0.1 wt.% and then is gradually decreased with the addition of more alloying element.

Germen, Gül?ah, E-mail: gulsahgermen@hotmail.com; ?evik, Hüseyin, E-mail: gulsahgermen@hotmail.com [Mersin University, Faculty of Engineering, Department of Metallurgical and Materials Engineering, Mersin, 33343 (Turkey); Kurnaz, S. Can [Sakarya University, Faculty of Engineering, Department of Metallurgical and Materials Engineering, Adapazarý, 54187 (Turkey)

2013-12-16T23:59:59.000Z

407

Electrospark alloying for deposition on aluminum surface of Al-Sn coatings and their wear resistance under dry friction  

Science Journals Connector (OSTI)

Some aspects of coating deposition on aluminum substrate by electrospark alloying with toolelectrode from Al-Sn alloy...2 nanofibers formation in coatings have been studied. Wear resistance of such coatings, unde...

V. I. Agafii; V. I. Petrenko; V. M. Fomichev…

2013-05-01T23:59:59.000Z

408

Graphene-encapsulated mesoporous SnO2 composites as high performance anodes for lithium-ion batteries  

Science Journals Connector (OSTI)

Mesoporous metal oxides such as SnO2...exhibit a superior electrochemical performance as anode materials for lithium-ion batteries due to their large surface areas and ... collapse during the charge–discharge pro...

Shuhua Jiang; Wenbo Yue; Ziqi Gao; Yu Ren; Hui Ma…

2013-05-01T23:59:59.000Z

409

SnO2-reduced graphene oxide nanoribbons as anodes for lithium ion batteries with enhanced cycling stability  

Science Journals Connector (OSTI)

A nanocomposite material of SnO2-reduced graphene oxide nanoribbons has been developed. In this composite, the reduced graphene oxide nanoribbons are uniformly coated by nanosized...2 that formed a thin layer of ...

Lei Li; Anton Kovalchuk; James M. Tour

2014-09-01T23:59:59.000Z

410

In situ synthesis of SnO2 nanosheet/graphene composite as anode materials for lithium-ion batteries  

Science Journals Connector (OSTI)

A novel SnO2/graphene composite has been synthesized via an in...2 nanosheets are uniformly grown on graphene support. The as-prepared products were characterized ... used as an anode material for lithium ion batteries

Hongdong Liu; Jiamu Huang; Chengjie Xiang…

2013-10-01T23:59:59.000Z

411

Fabrication and optical property of periodic Sn1-xTixO2 nanostructures patterned by the polystyrene microsphere templates  

Science Journals Connector (OSTI)

Regular arrays of Sn1-xTixO2 nanostructures were fabricated by glancing angle sputter deposition onto self-assembled close-packed arrays of 200 nm diameter, 500 nm diameter, and 1 µm diameter polystyrene microspheres, respectively. ...

Shutian Chen; Zhengcao Li; Zhengjun Zhang

2011-01-01T23:59:59.000Z

412

A study of Sn addition on bonding arrangement of Se-Te alloys using far infrared transmission spectroscopy  

SciTech Connect

Far infrared transmission spectra of Se{sub 92}Te{sub 8-x}Sn{sub x} (x = 0, 1, 2, 3, 4, 5) glassy alloys are obtained in the spectral range 50-600 cm{sup -1} at room temperature. The results are interpreted in terms of the vibrations of the isolated molecular units in such a way so as to preserve fourfold and twofold coordination for Sn and chalcogen atoms (Se,Te), respectively. With the addition of Sn, Far-IR spectra shift toward high frequency side and some new bands start appearing. Sn atoms appear to substitute for the selenium atoms in the outrigger sites due to large bond formation probability. Theoretical calculations of bond energy, relative probability of bond formation, force constant, and wave number were also made to justify the result.

Kumar, Rajneesh; Rangra, V. S. [Department of Physics, Himachal Pradesh University, Summer-Hill, Shimla, H.P. - 171005 (India); Sharma, Parikshit [Department of Physics, Sri Sai University, Palampur, HP (India); Katyal, S. C. [Department of Physics, Jaypee Institute of Information Technology, Noida, U.P. (India); Sharma, Pankaj [Department of Physics, Jaypee University of Information Technology, Waknghat, Solan, H.P. 173215 (India)

2011-07-01T23:59:59.000Z

413

Effects of Cu and Ga additions to Nb/sub 3/Sn superconductors prepared by infiltration process  

SciTech Connect

The effects of Cu and Ga additions on the superconducting properties of infiltration-processed Nb/sub 3/Sn have been studied. The addition of Cu to the Sn improves the overall critical current density J/sub c/ at entire fields, which is considered to result from the enhancement in Nb/sub 3/Sn growth rate. J/sub c/ of 8 x 10/sup 4/ A/cm/sup 2/ at 4.2 K and 12 T has been obtained for the specimen infiltrated with Sn-20at%Cu alloy. The Ga addition has been found to improve J/sub c/ at high magnetic fields, which is probably a consequence of an increase in the upper critical field H/sub c2/. However, at lower fields J/sub c/ is somewhat lower than that of the specimens without Ga.

Kumakura, H.; Togano, K.; Tachikawa, K.

1981-01-01T23:59:59.000Z

414

NEUTRON SCATTERING STUDIES OF THE FRUSTRATED ANTIFERROMAGNETIC PYROCHLORE SYSTEM Tb2Sn2-xTixO7.  

E-Print Network (OSTI)

?? The following dissertation shows the results of a series of inelastic neutron scattering experiments on the geometrically frustrated pyrochlore system Tb2Sn2-xTixO7 for x=0, 0.1,… (more)

Zhang, Jimin

2013-01-01T23:59:59.000Z

415

Phonon lifetime in SiSn and its suitability for hot-carrier solar cells  

SciTech Connect

We present a phononic and electronic study of SiSn in the zinc-blende phase. A detailed description of the longitudinal optical (LO) phonon decay in a three-phonon process is presented together with the corresponding lifetime. The necessity to go beyond the zone center phonon approximation in this case is highlighted as it reveals a steep dependence of the lifetime on the initial phonon wavenumber, which differs from usual semiconductors. The electronic band structure is calculated within the GW formalism and shows a small direct band gap. It is shown that the LO-phonon resulting from electron cooling has a lifetime four to eight orders of magnitude above all the known value in semiconductors for this process. We finally show the suitability of SiSn for hot-carrier solar cells, as it is endowed with ultra-slow cooling of hot carriers.

Levard, Hugo; Laribi, Sana; Guillemoles, Jean-François [Institute for Research and Development on Photovoltaic Energy (IRDEP), UMR 7174, EDF R and D/CNRS/Chimie ParisTech, 6 quai Watier, 78401 Chatou (France)

2014-06-02T23:59:59.000Z

416

CHANDRA OBSERVATIONS OF SN 1987A: THE SOFT X-RAY LIGHT CURVE REVISITED  

SciTech Connect

We report on the present stage of SN 1987A as observed by the Chandra X-Ray Observatory. We reanalyze published Chandra observations and add three more epochs of Chandra data to get a consistent picture of the evolution of the X-ray fluxes in several energy bands. We discuss the implications of several calibration issues for Chandra data. Using the most recent Chandra calibration files, we find that the 0.5-2.0 keV band fluxes of SN 1987A have increased by {approx}6 Multiplication-Sign 10{sup -13} erg s{sup -1} cm{sup -2} per year since 2009. This is in contrast with our previous result that the 0.5-2.0 keV light curve showed a sudden flattening in 2009. Based on our new analysis, we conclude that the forward shock is still in full interaction with the equatorial ring.

Helder, E. A.; Broos, P. S.; Burrows, D. N. [Department of Astronomy and Astrophysics, The Pennsylvania State University, 525 Davey Laboratory, University Park, PA 16802 (United States)] [Department of Astronomy and Astrophysics, The Pennsylvania State University, 525 Davey Laboratory, University Park, PA 16802 (United States); Dewey, D. [MIT Kavli Institute, Cambridge, MA 02139 (United States)] [MIT Kavli Institute, Cambridge, MA 02139 (United States); Dwek, E. [Observational Cosmology Laboratory, Code 665, NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States)] [Observational Cosmology Laboratory, Code 665, NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States); McCray, R. [JILA, University of Colorado and NIST, 440 UCB, Boulder, CO 80309 (United States)] [JILA, University of Colorado and NIST, 440 UCB, Boulder, CO 80309 (United States); Park, S. [Department of Physics, University of Texas at Arlington, Box 19059, Arlington, TX 76019 (United States)] [Department of Physics, University of Texas at Arlington, Box 19059, Arlington, TX 76019 (United States); Racusin, J. L. [NASA, Goddard Space Flight Center, Code 661, Greenbelt, MD 20771 (United States)] [NASA, Goddard Space Flight Center, Code 661, Greenbelt, MD 20771 (United States); Zhekov, S. A. [Space Research and Technology Institute, Akad. G. Bonchev str., bl.1, Sofia 1113 (Bulgaria)] [Space Research and Technology Institute, Akad. G. Bonchev str., bl.1, Sofia 1113 (Bulgaria)

2013-02-10T23:59:59.000Z

417

Critical current and instability threshold measurement of Nb3Sn cables for high field accelerator magnets  

SciTech Connect

Rutherford-type cables made of high critical current Nb{sub 3}Sn strands are being used in several laboratories for developing new generation superconducting magnets for present and future accelerators and upgrades. Testing of cable short samples is an important part of these R&D programs and the instability problem found in some short model magnets at Fermilab made these tests even more significant. Fermilab in collaboration with BNL, CERN and LBNL has developed sample holders and sample preparation infrastructure and procedures for testing Nb{sub 3}Sn cable short samples at BNL and CERN test facilities. This paper describes the sample holders, sample preparation and instrumentation, and test results. Several samples made of MJR or PIT strands 1 mm in diameter have been tested. Some samples were unstable (i.e. quenched at low transport currents) at low fields and reached the critical surface at higher fields.

Ambrosio, G.; Andreev, N.; /Fermilab; Bartlett, S.E.; /LBL, Berkeley; Barzi, E.; /Fermilab; Denarie, C.-H.; /CERN; Dietderich, D.; /LBL, Berkeley; Ghosh, A.K.; /Brookhaven; Verweij, A.P.; /CERN; Zlobin, A.V.; /Fermilab

2004-11-01T23:59:59.000Z

418

50–500 MeV ??ray emission in the early phase of SN1987A  

Science Journals Connector (OSTI)

SN1987A was observed on 19th April 1987 with a combined high energy ??ray and hard x?ray payload flown on a stratospheric balloon from Alice Springs Australia. The ??ray detector sensitive in the energy range 50–500 MeV was an optical spark chamber with 400cm2 area a field of view of 60° FWHM and a time resolution of 10 ?s. The counting rate profile at ?2.2 mb float altitude has lead to a 3? upper limit to the steady ??ray flux of 7×10? 4 ph cm? 2 s? 1 in the 50–500 MeV range. This upper limit is compared to our predictions for the time profile of ??ray emission from SN1987A resulting from pulsar acceleration of particles to cosmic ray energies.

R. K. Sood; J. A. Thomas; L. Waldron; R. K. Manchanda; P. Ubertini; A. Bazzano; C. D. La Padula; G. K. Rochester; T. J. Sumner; G. Frye; T. Jenins; R. Koga; P. Albats

1988-01-01T23:59:59.000Z

419

Targets for R&D on Nb3Sn conductor for High Energy Physics  

E-Print Network (OSTI)

High Energy Physics has been consistently pushing the performance of technical superconductors, for the benefit of high field magnet technology. So far the workhorse for particle accelerators has been Nb-Ti, but the practical performance limit has been attained with the LHC. Calls for higher beam luminosity (e.g. HL-LHC), and higher beam energy (e.g. FCC), demand a transition from Nb-Ti to Nb3Sn, presently the only practical candidate material offering the required high field performance. This paper provides a summary of desirable properties and performance targets for Nb3Sn to satisfy the challenging magnet specifications for upgrades of existing and future HEP accelerators.

Ballarino, A

2015-01-01T23:59:59.000Z

420

Synthesis and thermoelectric properties of Cu excess Cu2ZnSnSe4  

SciTech Connect

Quaternary stannites with an excess of copper were successfully synthesized by reacting the constituent elements and subsequent solid state annealing, followed by densification by hot-pressing. The composition for each specimen was confirmed with a combination of Rietveld refinement and elemental analysis. Their high temperature thermoelectric properties were measured from 300 K to 800 K and compared with that of Cu2ZnSnSe4. The thermal conductivity decreases significantly with increasing Cu content at elevated temperatures due to the crystal structure of this material system. A maximum ZT value of 0.86 was obtained at 800 K for the specimen with the highest Cu content, Cu2.2Zn0.8SnSe4.

Dong, Yongkwan [University of South Florida, Tampa (USF); Wang, Hsin [ORNL; Nolas, G [University of South Florida, Tampa

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "uut ge sn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Comparison of Nb/sub 3/Sn and NbTi superconductor magnet ITER devices  

SciTech Connect

The TETRA tokamak systems code is used to compare designs for the International Thermonuclear Experimental Reactor (ITER) that use Nb/sub 3/Sn and NbTi superconductor magnets. Similar minimum-cost devices are found with both types of conductors when superfluid helium (He-II) is used in conjunction with the NbTi. The cost of using NbTi with He-I cooling is much higher than that of using Nb/sub 3/Sn or NbTi with He-II cooling. Generally, the minimum-cost devices occur for peak fields at the toroidal field coil of about 11.5 - 13 T, depending on the physics requirements. Sensitivities to the allowable stress level indicate strong cost increases when the stress is reduced from the nominal 600-MPa level and weaker cost benefits when the stress is allowed to reach higher levels.

Galambos, J.D.; Peng, Y.K.M.; Reid, R.L.; Lubell, M.S.; Dresner, L.; Miller, J.R.

1989-03-01T23:59:59.000Z

422

Is there hydrogen bonding for gas phase SN2 pre-reaction complexes?  

Science Journals Connector (OSTI)

Abstract For some gas-phase X? + CH3Y ? XCH3 + Y? SN2 nucleophilic substitution reactions a pre-reaction complex is formed in which the attacking anion binds to a H-atom to form X??HCH2Y. In this work properties of this complex are investigated, for the OH? + CH3I and F? + CH3I reactions, to determine whether the HO??HCH2I and F??HCH2I complexes should be considered hydrogen-bonded complexes. Properties considered for these complexes are their structures, vibrational frequencies, well depths, and partial atomic charges. Also considered is the role of the HO??HCH2I complex in proton transfer for both the proton transfer and SN2 reaction pathways. The results of these analyses indicate that these X??HCH2Y complexes are hydrogen bonding complexes.

Jing Xie; Jiaxu Zhang; William L. Hase

2014-01-01T23:59:59.000Z

423

Development of Superconducting Materials for Use in Magnet Applications: Nb3Sn Flux Pinning and Bi-2212 Magnetic Texturing  

E-Print Network (OSTI)

DEVELOPMENT OF SUPERCONDUCTING MATERIALS FOR USE IN MAGNET APLICATIONS: Nb3Sn FLUX PINING AND Bi-212 MAGNETIC TEXTURING Major: Physics April 2010 Submitted to the Office of Undergraduate Research Texas A&M University... in partial fulfillment of the requirements for the designation as UNDERGRADUATE RESEARCH SCHOLAR A Senior Scholars Thesis by DAVID GABRIEL RAHMANI DEVELOPMENT OF SUPERCONDUCTING MATERIALS FOR USE IN MAGNET APLICATIONS: Nb3Sn FLUX...

Rahmani, David G.

2010-07-14T23:59:59.000Z

424

Surface passivation of the Ge substrate by novel nitrogen plasma immersion treatment  

Science Journals Connector (OSTI)

In this paper, a novel nitrogen plasma immersion treatment (NNPIT) with accelerating power for Ge surface passivation is presented and compared with conventional nitrogen plasma immersion treatment (NPIT). Results show that the Ge–N bond formed at a surface by NPIT can suppress the growth of Ge suboxide during high-K dielectric deposition. As for NNPIT, more nitrogen plasma drifts to the Ge surface, which is induced by the accelerating electric field, to enhance the dangling bond passivation, and thus the NNPIT method can further suppress Ge suboxide growth during high-K dielectric deposition. As a result, the C–V characteristics in terms of a flat-band voltage, hysteresis and interface state density can be significantly improved, which is promising for high performance Ge MOSFETs fabrication.

Meng Lin; Ming Li; Xia An; Quanxin Yun; Min Li; Zhiqiang Li; Pengqiang Liu; Xing Zhang; Ru Huang

2013-01-01T23:59:59.000Z

425

Germanium diffusion during HfO{sub 2} growth on Ge by molecular beam epitaxy  

SciTech Connect

The authors study the Ge diffusion during HfO{sub 2} growth by molecular beam epitaxy on differently in situ prepared germanium substrates and at different growth temperatures. While HfO{sub 2} layers grown directly on Ge do not show any germanium contamination, oxygen rich interfacial layers such as GeO{sub x} or GeO{sub x}N{sub y} partly dissolve into the HfO{sub 2} layer, giving rise to high Ge contamination (from 1% to 10%). The use of nitridated interfacial layers does not prevent Ge diffusion into the HfO{sub 2} during the growth process because of the high oxygen content present in the nitridated germanium layer.

Ferrari, S.; Spiga, S.; Wiemer, C.; Fanciulli, M.; Dimoulas, A. [Laboratorio MDM-INFM-CNR, Via Olivetti, 2 Agrate Brianza, Milano 20041 (Italy); MBE Laboratory, Institute of Materials Science, DEMOKRITOS National Center for Scientific Research, 153 10 Athens (Greece)

2006-09-18T23:59:59.000Z

426

Ge doped HfO{sub 2} thin films investigated by x-ray absorption spectroscopy  

SciTech Connect

The stability of the tetragonal phase of Ge doped HfO{sub 2} thin films on Si(100) was investigated. Hf(Ge)O{sub 2} films with Ge atomic concentrations varying from 0% to 15% were deposited by remote plasma chemical vapor deposition. The atomic structure on the oxide after rapid thermal annealing was investigated by x-ray absorption spectroscopy of the O and Ge K edges and by Rutherford backscattering spectrometry. The authors found that Ge concentrations as low as 5 at. % effectively stabilize the tetragonal phase of 5 nm thick Hf(Ge)O{sub 2} on Si and that higher concentrations are not stable to rapid thermal annealing at temperatures above 750 deg. C.

Miotti, Leonardo; Bastos, Karen P.; Lucovsky, Gerald; Radtke, Claudio; Nordlund, Dennis [Department of Physics, North Carolina State University, Box 8202, Raleigh, North Carolina 27695-8202 (United States); Instituto de Quimica, Universidade Federal do Rio Grande do Sul, 91509-900 Porto Alegre (Brazil); Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States)

2010-07-15T23:59:59.000Z

427

Observation of optical spin injection into Ge-based structures at room temperature  

SciTech Connect

Non-zero spin polarization induced by optical orientation was clearly observed at room temperature in a Ge/Ge{sub 0.8}Si{sub 0.2} quantum well grown on Ge and a Ge layer grown on Si by molecular beam epitaxy, whereas it was absent in bulk Ge. This occurred because indirect-gap photoluminescence (PL), which can obscure the spin-polarization information carried by the direct-gap PL, was quenched by unintentional growth-related defects in the epitaxial layers. Such interpretation was confirmed by applying time gating that effectively removed the indirect-gap PL characterized by a slower rise time, which allowed us to demonstrate the existence of room-temperature spin polarization in bulk Ge.

Yasutake, Yuhsuke; Hayashi, Shuhei; Fukatsu, Susumu [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan)] [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan); Yaguchi, Hiroyuki [Graduate School of Science and Engineering, Saitama University, Shimo-Okubo 255, Sakura, Saitama 338-8570 (Japan)] [Graduate School of Science and Engineering, Saitama University, Shimo-Okubo 255, Sakura, Saitama 338-8570 (Japan)

2013-06-17T23:59:59.000Z

428

Raman Spectroscopy Insights into the Size-Induced Structural Transformation in SnSe Nanolayers  

Science Journals Connector (OSTI)

‡ Department of Natural Sciences, Oregon Institute of Technology, Klamath Falls, Oregon 97601, United States ... Various phase transitions have been observed in Group IV chalcogenide compounds under the influence of temperature,(16-19) pressure,(20, 21) or interface strain. ... This change in the number of modes and in the Ag tensor allows us to rule out potential space groups for the SnSe layers as they become thinner. ...

Michael Ludemann; Ovidiu D. Gordan; Dietrich R. T. Zahn; Matt Beekman; Ryan Atkins; David C. Johnson

2014-06-18T23:59:59.000Z

429

Structural and electronic modification of photovoltaic SnS by alloying  

SciTech Connect

Emergence of a terawatt scalable photovoltaic (PV) thin film technology is currently impeded by the limited supply of relatively rare elements like In or Te, which has spurred active research in recent years on earth-abundant PV materials. Instead of searching for alternative PV materials, we approach the problem here by structural modification through alloying of a known PV material, namely, tin sulfide. Although SnS is a strong visible light absorber that is naturally p-doped, its indirect band gap reduces the open circuit voltage of SnS-based solar cells. The anisotropic crystal structure results in undesirable anisotropic transport properties. Based on the observation that the isoelectronic sulfides MgS, CaS, and SrS assume the rock-salt structure, we use ab initio calculations to explore the structure and electronic properties of metastable Sn{sub 1?x}(II){sub x}S (II?=?Mg, Ca, Sr) alloys, finding that the isotropic rock-salt phase is stabilized above x?=?0.2–0.3, and predicting direct band gaps in the range of interest for PV applications, i.e., 0.6–1.5?eV for Ca and Sr alloying. We subsequently synthesized such Sn{sub 1?x}(Ca){sub x}S films by pulsed laser deposition, confirmed the cubic rock-salt structure, and observed optical band gaps between 1.1 and 1.3?eV. These results highlight the potential of structural modification by alloying as a route to widen the otherwise limited materials base for promising earth-abundant materials.

Vidal, Julien; Lany, Stephan, E-mail: Stephan.lany@nrel.gov [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401-3305 (United States); Francis, Jason; Tate, Janet, E-mail: janet.tate@physics.oregonstate.edu [Department of Physics, Oregon State University, Corvallis, Oregon 97331 (United States); Kokenyesi, Robert [Department of Chemistry, Oregon State University, Corvallis, Oregon 97330 (United States)

2014-03-21T23:59:59.000Z

430

Eliashberg Function in an Amorphous Simple Metal Alloy Sn1-Xcux Determined by Electron-Tunneling  

E-Print Network (OSTI)

dependence based on asymptotic expansions in different frequency re- gions. As discussed in a preliminary report of these tunneling measurements, the amorphous Sn& Cu system is the best characterized of simple metal amorphous superconductors and is well... between the experi- mental tunneling density of states and that calculated with u F(co). For most superconductors a quadratic dependence of n F(cu) below ui;?provides good agreement between the experimental and calculated tunneling density of states...

WATSON, PW; Naugle, Donald G.

1995-01-01T23:59:59.000Z

431

Hybrid functional calculation of electronic and phonon structure of BaSnO{sub 3}  

SciTech Connect

Barium stannate, BaSnO{sub 3} (BSO), with a cubic perovskite structure, has been highlighted as a promising host material for the next generation transparent oxide electrodes. This study examined theoretically the electronic structure and phonon structure of BSO using hybrid density functional theory based on the HSE06 functional. The electronic structure results of BSO were corrected by extending the phonon calculations based on the hybrid density functional. The fundamental thermal properties were also predicted based on a hybrid functional calculation. Overall, a detailed understanding of the electronic structure, phonon modes and phonon dispersion of BSO will provide a theoretical starting-point for engineering applications of this material. - Graphical Abstract: (a) Crystal structure of BaSnO{sub 3}. The center ball is Ba and small (red) ball on edge is oxygen and SnO{sub 6} octahedrons are plotted as polyhedron. (b) Electronic band structure along the high symmetry point in the Brillouin zone using the HSE06 hybrid functional. (c) The phonon dispersion curve calculated using the HSE06 hybrid functional (d) Zone center lowest energy F{sub 1u} phonon mode. Highlights: Black-Right-Pointing-Pointer We report the full hybrid functional calculation of not only the electronic structure but also the phonon structure for BaSnO{sub 3}. Black-Right-Pointing-Pointer The band gap calculation of HSE06 revealed an indirect gap with 2.48 eV. Black-Right-Pointing-Pointer The effective mass at the conduction band minimum and valence band maximum was calculated. Black-Right-Pointing-Pointer In addition, the phonon structure of BSO was calculated using the HSE06 functional. Black-Right-Pointing-Pointer Finally, the heat capacity was calculated and compared with the recent experimental result.

Kim, Bog G., E-mail: boggikim@pusan.ac.kr [Department of Physics, Pusan National University, Pusan 609-735 (Korea, Republic of); Jo, J.Y. [Department of Physics, Pusan National University, Pusan 609-735 (Korea, Republic of); Cheong, S.W. [Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854 (United States)

2013-01-15T23:59:59.000Z

432

Highly regio- and stereocontrolled SN2? reactions of gem-difluorinated vinyloxiranes with monoalkylcopper reagents  

Science Journals Connector (OSTI)

Reaction of gem-difluorinated vinyloxiranes with RCu(X)Li allowed us to introduce the R group regioselectively at the fluorine-attached terminal carbon atom in an SN2? manner to afford (E)-allylic alcohols exclusively, while homoallylic alcohols with anti stereochemical relationship were found to be obtained selectively from higher-ordered cuprates derived from CuCl and \\{RMgBr\\} in a ratio of 1:3.

Hisanori Ueki; Takashi Chiba; Takashi Yamazaki; Tomoya Kitazume

2005-01-01T23:59:59.000Z

433

In situ deposition method preparation of Li4Ti5O12–SnO2 composite materials for lithium ion batteries  

Science Journals Connector (OSTI)

A Li4Ti5O12–SnO2 composite anode material for lithium-ion batteries has been prepared by loading various amounts of nano-SnO2 on Li4Ti5O12 to obtain composite materials with improved electrochemical performance relative to Li4Ti5O12 and SnO2. The composite materials were characterized by XRD, IR and SEM. The results indicated that SnO2 particles have encapsulated on the surface of the Li4Ti5O12 uniformly and tightly. The influence of SnO2 proportion on the electrochemical properties of Li4Ti5O12–SnO2 composite material was investigated and discussed. The results showed that Li4Ti5O12–SnO2 (5%) has the best cycling behavior among all the samples. At a current rate of 0.5 mA cm?2, the material delivered a discharge capacity of 189 mAh g?1 after 42 cycles. Electrochemical results indicated that the Li4Ti5O12–SnO2 composites increased the reversible capacity of Li4Ti5O12 and cycling reliability of the SnO2 anode material. It suggests the existence of synergistic interaction between Li4Ti5O12 and SnO2 and that the capacity of the composite is not a simple weighted sum of the capacities of the individual components.

Yan-Jing Hao; Qiong-Yu Lai; Yuan-Duan Chen; Ji-Zheng Lu; Xiao-Yang Ji

2008-01-01T23:59:59.000Z

434

DISCOVERY OF THE BROAD-LINED TYPE Ic SN 2013cq ASSOCIATED WITH THE VERY ENERGETIC GRB 130427A  

SciTech Connect

Long-duration gamma-ray bursts (GRBs) at z < 1 are found in most cases to be accompanied by bright, broad-lined Type Ic supernovae (SNe Ic-BL). The highest-energy GRBs are mostly located at higher redshifts, where the associated SNe are hard to detect observationally. Here, we present early and late observations of the optical counterpart of the very energetic GRB 130427A. Despite its moderate redshift, z = 0.3399 ± 0.0002, GRB 130427A is at the high end of the GRB energy distribution, with an isotropic-equivalent energy release of E{sub iso} ? 9.6 × 10{sup 53} erg, more than an order of magnitude more energetic than other GRBs with spectroscopically confirmed SNe. In our dense photometric monitoring, we detect excess flux in the host-subtracted r-band light curve, consistent with that expected from an emerging SN, ?0.2 mag fainter than the prototypical SN 1998bw. A spectrum obtained around the time of the SN peak (16.7 days after the GRB) reveals broad undulations typical of SNe Ic-BL, confirming the presence of an SN, designated SN 2013cq. The spectral shape and early peak time are similar to those of the high expansion velocity SN 2010bh associated with GRB 100316D. Our findings demonstrate that high-energy, long-duration GRBs, commonly detected at high redshift, can also be associated with SNe Ic-BL, pointing to a common progenitor mechanism.

Xu, D.; Krühler, T.; Hjorth, J.; Malesani, D.; Fynbo, J. P. U.; Watson, D. J.; Geier, S. [Dark Cosmology Centre, Niels Bohr Institute, University of Copenhagen, Juliane Maries Vej 30, DK-2100 København Ø (Denmark); De Ugarte Postigo, A.; Thöne, C. C.; Sánchez-Ramírez, R. [Instituto de Astrofísica de Andalucía, CSIC, Glorieta de la Astronomía s/n, E-18008 Granada (Spain); Leloudas, G. [The Oskar Klein Centre, Department of Physics, Stockholm University, AlbaNova, SE-10691 Stockholm (Sweden); Cano, Z.; Jakobsson, P. [Centre for Astrophysics and Cosmology, Science Institute, University of Iceland, Dunhagi 5, IS-107 Reykjavik (Iceland); Schulze, S. [Departamento de Astronomía y Astrofísica, Pontificia Universidad Católica de Chile, Casilla 306, Santiago 22 (Chile); Kaper, L. [Astronomical Institute Anton Pannekoek, University of Amsterdam, Science Park 904, NL-1098 XH Amsterdam (Netherlands); Sollerman, J. [The Oskar Klein Centre, Department of Astronomy, Stockholm University, AlbaNova, SE-10691 Stockholm (Sweden); Cabrera-Lavers, A. [Instituto de Astrofísica de Canarias, E-38205 La Laguna, Tenerife (Spain); Cao, C. [Department of Space Science and Physics, Shandong University at Weihai, Weihai, Shandong 264209 (China); Covino, S. [INAF/Brera Astronomical Observatory, via Bianchi 46, I-23807 Merate (Italy); Flores, H., E-mail: dong@dark-cosmology.dk [Laboratoire Galaxies Etoiles Physique et Instrumentation, Observatoire de Paris, 5 place Jules Janssen, F-92195 Meudon (France); and others

2013-10-20T23:59:59.000Z

435

Magnetic-susceptibility and electrical-resistivity measurements on RPdSn (R=Ce–Yb) compounds  

Science Journals Connector (OSTI)

Magnetic-susceptibility and electrical-resistivity measurements have been carried out on equiatomic ternary compounds, RPdSn (R=Ce–Yb), in the temperature range 4.2 and 300 K. The compounds EuPdSn and YbPdSn have been synthesized. As-cast RPdSn (R=Ce–Yb) compounds crystallize in the orthorhombic TiNiSi-type structure. However, on annealing at 950 °C, Er- and Tm-containing compounds transform to hexagonal Fe2P-type structure. Magnetic-susceptibility measurements reveal that the compounds with R=Ce, Sm, Eu, Gd, Tb, Dy, and Er order antiferromagnetically with Néel temperatures (TN) of 7.5, 11, 13, 14.5, 23.5, 11.4, and 5.6 K, respectively. The compounds with R=Pr, Nd, Ho, and Tm are paramagnetic down to 4.2 K. Susceptibility of YbPdSn shows Curie-Weiss behavior between 300-150 K with ?eff=1.45?B and deviates considerably from it below 150 K. The electrical resistivity of all these compounds exhibits metallic behavior and shows a sharp drop at the respective Néel temperatures. The TN of the RPdSn series does not follow de Gennes scaling and, instead, peaks at Tb. This behavior of TN can be understood on the basis of crystalline-electric-field effects.

D. T. Adroja and S. K. Malik

1992-01-01T23:59:59.000Z

436

Structural and magnetic properties of Ge{sub 1-x}Mn{sub x} thin films grown on Ge (001) substrates  

SciTech Connect

We investigate the structural and magneto-optical properties of Mn-doped Ge (Ge{sub 1-x}Mn{sub x}) films with self-organized nanocolumns, grown on Ge (001) substrates by molecular beam epitaxy (MBE), in which the substrate temperature (T{sub S}) and growth rate (R{sub G}) are varied. Transmission electron microscopy (TEM) observations and magnetic circular dichroism (MCD) measurements reveal that Mn-rich nanocolumnar precipitation is formed in the Ge{sub 1-x}Mn{sub x} films grown at T{sub S} {<=} 100 deg. C, with keeping the size and spacing. At higher T{sub S} ({>=}150 deg. C), ferromagnetic Mn{sub 5}Ge{sub 3} clusters are formed. It is also found that the Mn distribution in the Ge{sub 1-x}Mn{sub x} films can be controlled: By lowering T{sub S} or increasing R{sub G}, the Mn content x{sub nc} in the nanocolumns decreases and Mn atoms are more distributed into the Ge matrix, and eventually the magnetic properties are changed. The formation of the nanocolumns is explained by the spinodal decomposition in the layer-by-layer growth mode. We analyzed the periodicity and Mn content x{sub nc} of nanocolumns by using the Cahn-Hilliard equation.

Yada, Shinsuke; Nam Hai, Pham; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Sugahara, Satoshi [Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-G2-14 Nagatsuta, Yokohama, Kanagawa 226-8502 (Japan)

2011-10-01T23:59:59.000Z

437

Tensile-strain and doping enhanced direct bandgap optical transition of n{sup +} doped Ge/GeSi quantum wells  

SciTech Connect

Band structures of tensile strained and n{sup +} doped Ge/GeSi quantum wells (QWs) are calculated by multiple-band k·p method. The energy dispersion curves of the ? and L conduction subbands are obtained. The effects of tensile strain and n{sup +} doping in Ge on direct bandgap optical gain and spontaneous radiative recombination rate spectra are investigated including the electron leakage from ? to L conduction subbands. Our results show that the optical gain and spontaneous radiative recombination rate can be significantly increased with the tensile strain, n-type doping concentration, and injection carrier density in the Ge QW. The free carrier absorption is calculated and cannot be ignored because of the heavily doped Ge. The pure TM mode polarized net optical gain up to 1153?cm{sup ?1} can be achieved for the Ge/Ge{sub 0.986}Si{sub 0.014} QW with tensile strain of 1.61% and n-type doping concentration of 30?×?10{sup 18}?cm{sup ?3}.

Fan, W. J., E-mail: ewjfan@ntu.edu.sg [NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2013-11-14T23:59:59.000Z

438

Vermont Yankee's benefits and concerns operating with Axially zoned GE9 fuel  

SciTech Connect

Vermont Yankee (VY) is a 368-assembly, D-lattice, boiling water reactor (BWR)/4. The current cycle 16 contains 252 GE9 assemblies with axial zoning of gadolinium and enrichment, 112 GE8 assemblies with axially zoned gadolinium, and 4 Siemens 9 x 9-IX lead qualification assemblies. In this paper, the performance of the GE9-dominated core is evaluated against previous cores containing less sophisticated fuel designs.

Woehlke, R.A. (Yankee Atomic Electric Co., Bolton, MA (United States))

1993-01-01T23:59:59.000Z

439

Results on neutrinoless double beta decay of 76 Ge from Gerda Phase I  

E-Print Network (OSTI)

Results on neutrinoless double beta decay of 76 Ge from Gerda Phase I M. Agostini,14 M. Allardt,3 E and a lower limit is derived for the half-life of neutrinoless double beta decay of 76 Ge, T0 1/2> 2.1 · 1025 double beta decay of the isotope 76 Ge. Data con- sidered in the present analysis have been collected

440

A LUMINOUS AND FAST-EXPANDING TYPE Ib SUPERNOVA SN 2012au  

SciTech Connect

We present a set of photometric and spectroscopic observations of a bright Type Ib supernova SN 2012au from -6 days until {approx} + 150 days after maximum. The shape of its early R-band light curve is similar to that of an average Type Ib/c supernova. The peak absolute magnitude is M{sub R} = -18.7 {+-} 0.2 mag, which suggests that this supernova belongs to a very luminous group among Type Ib supernovae. The line velocity of He I {lambda}5876 is about 15,000 km s{sup -1} around maximum, which is much faster than that in a typical Type Ib supernova. From the quasi-bolometric peak luminosity of (6.7 {+-} 1.3) Multiplication-Sign 10{sup 42} erg s{sup -1}, we estimate the {sup 56}Ni mass produced during the explosion as {approx}0.30 M{sub Sun }. We also give a rough constraint to the ejecta mass 5-7 M{sub Sun} and the kinetic energy (7-18) Multiplication-Sign 10{sup 51} erg. We find a weak correlation between the peak absolute magnitude and He I velocity among Type Ib SNe. The similarities to SN 1998bw in the density structure inferred from the light-curve model as well as the large peak bolometric luminosity suggest that SN 2012au had properties similar to energetic Type Ic supernovae.

Takaki, Katsutoshi; Fukazawa, Yasushi; Itoh, Ryosuke; Ueno, Issei; Ui, Takahiro; Urano, Takeshi [Department of Physical Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8526 (Japan); Kawabata, Koji S.; Akitaya, Hiroshi; Moritani, Yuki; Ohsugi, Takashi; Uemura, Makoto; Yoshida, Michitoshi [Hiroshima Astrophysical Science Center, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8526 (Japan); Yamanaka, Masayuki [Kwasan Observatory, Kyoto University, Ohmine-cho Kita Kazan, Yamashina-ku, Kyoto 607-8471 (Japan); Maeda, Keiichi; Nomoto, Ken'ichi [Kavli Institute for the Physics and Mathematics of the Universe (WPI), Todai Institutes for Advanced Study, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8583 (Japan); Tanaka, Masaomi [National Astronomical Observatory of Japan, 2-21-1 Osawa, Mitaka, Tokyo 181-8588 (Japan); Kinugasa, Kenzo [Nobeyama Radio Observatory, National Astronomical Observatory of Japan, 462-2 Nobeyama, Minamimaki, Nagano 384-1305 (Japan); Sasada, Mahito, E-mail: takaki@hep01.hepl.hiroshima-u.ac.jp [Department of Astronomy, Kyoto University, Kitashirakawa-Oiwake-cho, Sakyo-ku, Kyoto 606-8502 (Japan)

2013-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "uut ge sn" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Development and Coil Fabrication for the LARP 3.7-m Long Nb3Sn Quadrupole  

SciTech Connect

The U.S. LHC Accelerator Research Program (LARP) has started the fabrication of 3.7-m long Nb{sub 3}Sn quadrupole models. The Long Quadrupoles (LQ) are 'Proof-of-Principle' magnets which are to demonstrate that Nb{sub 3}Sn technology is mature for use in high energy particle accelerators. Their design is based on the LARP Technological Quadrupole (TQ) models, developed at FNAL and LBNL, which have design gradients higher than 200 T/m and an aperture of 90 mm. The plans for the LQ R&D and a design update are presented and discussed in this paper. The challenges of fabricating long accelerator-quality Nb{sub 3}Sn coils are presented together with the solutions adopted for the LQ coils (based on the TQ experience). During the fabrication and inspection of practice coils some problems were found and corrected. The fabrication at BNL and FNAL of the set of coils for the first Long Quadrupole is in progress.

Ambrosio, G.; Andreev, N.; Anerella, M.; Barzi, E.; Bossert, R.; Caspi, S.; Chlachidize, G.; Dietderich, D.; Felice, H.; Ferracin, P.; Ghosh, A.; Hafalia, R.; Hannaford, R.; Jochen, G.; Kashikhin, V.V.; Kovach, P.; Lamm, M.; Lietzke, A.; McInturff, A.; Muratore,, J.; Nobreaga, F.; Novitsky, I.; Peggs, S.; Prestemon, S.; Sabbi, G. L.; Schmalzle, J.; Turrioni, D.; Wanderer, P.; Whitson, G.; Zlobin, A. V.

2008-08-17T23:59:59.000Z

442

Development and coil fabrication for the LARP 3.7-m long Nb3Sn quadruple  

SciTech Connect

The U.S. LHC Accelerator Research Program (LARP) has started the fabrication of 3.7-m long Nb{sub 3}Sn quadrupole models. The Long Quadrupoles (LQ) are 'Proof-of-Principle' magnets which are to demonstrate that Nb3Sn technology is mature for use in high energy particle accelerators. Their design is based on the LARP Technological Quadrupole (TQ) models, developed at FNAL and LBNL, which have design gradients higher than 200 T/m and an aperture of 90 mm. The plans for the LQ R&D and a design update are presented and discussed in this paper. The challenges of fabricating long accelerator-quality Nb{sub 3}Sn coils are presented together with the solutions adopted for the LQ coils (based on the TQ experience). During the fabrication and inspection of practice coils some problems were found and corrected. The fabrication at BNL and FNAL of the set of coils for the first Long Quadrupole is in progress.

Ambrosio, G.; Andreev, N.; Anerella, M.; Barzi, E.; Bossert, R.; Caspi, S.; Chlachidize, G.; Dietderich, D.; Felice, H.; Ferracin, P.; Ghosh, A.; /Fermilab /Brookhaven /LBL, Berkeley /Texas A-M

2009-02-01T23:59:59.000Z

443

In Situ Observation of the Electrochemical Lithiation of a Single SnO2 Nanowire Electrode  

SciTech Connect

We report the first real-time transmission electron microscopy (TEM) observations of the structural evolution and phase transformation of lithium-ion battery anode during the battery charging process. A nanobattery consisting of a single SnO2 nanowire anode and an ionic liquid electrolyte was successfully constructed in a TEM. We observed that during the charging process, the SnO2 crystal was converted to Li2O glass with LixSn nanocrystalline precipitates as the reaction front propagated progressively along the nanowire. After the reaction front passed, the nanowire showed swelling, elongation, and large off-axis distortion (spiraling). Upon completion of the electrochemical charging, the nanowire showed up to 120% elongation and a 30% increase in diameter with a volume expansion of about 272%. The charging front, which separates the reacted and unreacted sections of the nanowire, contains a high density of mobile dislocations, which are continuously nucleated and annihilated at the moving reaction front. This dislocation cloud indicates large in-plane misfit stresses, and serves as structural precursor to the eventual complete solid-state amorphization. The rate of charging in our nanobatteries is found to be proportional to the inverse square root of nanowire length, indicating that a standalone nanobattery or integrated arrays of nanobatteries should have kinetic advantage over conventional battery design. The present observations also provide important mechanistic insights for the design of advanced batteries with improved performance and lifetime for broad electrical energy storage applications.

Huang, J. Y.; Zhong, Li; Wang, Chong M.; Sullivan, John P.; Xu, Wu; Zhang, Li Q.; Mao, Scott; Hudak, N.; Liu, Xiao H.; Subramanian, Arun Kumar; Fan, Hongyou; Qi, Liang; Kushima, Akihiro; Li, Ju

2010-11-18T23:59:59.000Z

444

Strong Orientation Dependence of Multinucleon Transfer Processes in $^{238}$U+$^{124}$Sn Reaction  

E-Print Network (OSTI)

We theoretically investigate multinucleon transfer (MNT) processes in $^{238}$U+$^{124}$Sn reaction at $E_\\mathrm{lab}=5.7$ MeV/$A$ using the time-dependent Hartree-Fock (TDHF) theory. For this reaction, measurements of MNT processes have been reported, showing substantial MNT cross sections accompanying more than ten protons. From the calculation, we find that the amount of transferred nucleons depends much on the relative orientation between the deformation axis of $^{238}$U and the relative vector connecting centers of $^{238}$U and $^{124}$Sn nuclei. We find a formation of thick neck when the $^{238}$U collides from its tip with $^{124}$Sn. However, the neck formation is substantially suppressed when $^{238}$U collides from its side. We have found that a large number of protons are transferred in the tip collision. This is caused by the breaking of the neck and subsequent absorption of nucleons in the neck region. We thus conclude that the measured MNT processes involving about ten protons originate from the neck breaking dynamics in the tip collisions of a deformed $^{238}$U nucleus.

Kazuyuki Sekizawa; Kazuhiro Yabana

2014-09-30T23:59:59.000Z

445

The discovery of SN2014J in the nearby starburst galaxy M82  

E-Print Network (OSTI)

In this Letter, we report the discovery of SN2014J in the nearby galaxy M82. Given its proximity, it offers the best opportunity to date to study a thermonuclear supernova over a wide range of the electromagnetic spectrum. The first set of optical, near-IR and mid-IR observations of SN2014J, orchestrated by the intermediate Palomar Transient Factory (iPTF), show that SN2014J is a spectroscopically normal Type Ia supernova, albeit exhibiting high-velocity features in its spectrum and heavily reddened by dust in the host galaxy. Our earliest detections start just hours after the fitted time of explosion. We use high-resolution optical spectroscopy to analyze the dense intervening material and do not detect any evolution in the resolved absorption features during the lightcurve rise. Similarly to other highly reddened Type Ia supernovae, a low value of total-to-selective extinction, Rv < 2, provides the best match to our observations. We also study pre-explosion optical and near-IR images from HST with specia...

Goobar, A; Amanullah, R; Fossey, S J; Cao, Y; Perley, D A; Kasliwal, M M; Ferretti, R; Nugent, P E; Harris, C; Gal-Yam, A; Ofek, E O; Tendulkar, S P; Dennefeld, M; Valenti, S; Arcavi, I; Banerjee, D P K; Venkataraman, V; Joshi, V; Ashok, N M; Cenko, S B; Diaz, R F; Fremling, C; Horesh, A; Howell, D A; Kulkarni, S R; Papadogiannakis, S; Petrushevska, T; Sand, D; Sollerman, J; Stanishev, V; Bloom, J S; Surace, J; Cooke, B N; Pollack, G M; Wilde, M; Wright, T

2014-01-01T23:59:59.000Z

446

First observation of the decay of a 15- seniority v=4 isomer in Sn128  

Science Journals Connector (OSTI)

Isomeric states in the semimagic 128-130Sn isotopes were populated in the fragmentation of a Xe136 beam on a Be9 target at an energy of 750 A·MeV. The decay of an isomeric state in Sn128 at an excitation energy of 4098 keV has been observed. Its half live has been determined to be T1/2=220(30) ns from the time distributions of the delayed ? rays emitted in its decay. ?? coincidence relations were analyzed in order to establish the decay pattern of the newly established state toward the known (7-) and (10+) isomers at excitation energies of 2092 and 2492 keV, respectively. Based on a comparison with results of state-of-the-art shell-model calculations the new isomeric state is proposed to have the ?h11/2-3d3/2-1 configuration with the four neutron holes in Sn132 maximally aligned to a total spin of I?=15-.

S. Pietri et al.

2011-04-29T23:59:59.000Z

447

Future prospects for Nb/sub 3/Sn and V/sub 3/Ga multifilamentary conductors  

SciTech Connect

Since the discovery of the bronze process for fabrication of multifilamentary Nb/sub 3/Sn and V/sub 3/Ga composite wires, significant progress has been made in the production of commercial-scale conductors with these compounds. However, improvements in the values of the critical-current density J/sub c//sup +/ (the matrix and the superconductors) of these wires are desired and appear possible for high-magnetic-field applications. In this section, an attempt is made to assess the value of the current density which could be achieved in the future in multifilamentary Nb/sub 3/Sn and V/sub 3/Ga at magnetic fields above 10 tesla. In order to do this, promising superconducting properties of experimental wires at high fields are summarized, and based on these values, achievable J/sub c//sup +/ in multifilamentary Nb/sub 3/Sn and V/sub 3/GA wires are estimated. In the process, some suggestions for approaches to improve J/sub c//sup +/ are discussed.

Suenaga, M.

1981-01-01T23:59:59.000Z

448

12 GeV Upgrade Project - Cryomodule Production  

SciTech Connect

The Thomas Jefferson National Accelerator Facility (Jefferson Lab) is producing ten 100+MV SRF cryomodules (C100) as part of the CEBAF 12 GeV Upgrade Project. Once installed, these cryomodules will become part of an integrated accelerator system upgrade that will result in doubling the energy of the CEBAF machine from 6 to 12 GeV. This paper will present a complete overview of the C100 cryomodule production process. The C100 cryomodule was designed to have the major components procured from private industry and assembled together at Jefferson Lab. In addition to measuring the integrated component performance, the performance of the individual components is verified prior to being released for production and assembly into a cryomodule. Following a comprehensive cold acceptance test of all subsystems, the completed C100 cryomodules are installed and commissioned in the CEBAF machine in preparation of accelerator operations. This overview of the cryomodule production process will include all principal performance measurements, acceptance criterion and up to date status of current activities.

J. Hogan, A. Burrill, G.K. Davis, M.A. Drury, M. Wiseman

2012-07-01T23:59:59.000Z

449

Phase-change optical recording materials based on GeSb  

Science Journals Connector (OSTI)

GeSb based materials are investigated for phase-change optical recording. Physical properties and amorphization / crystallization behavior are determined. Recording characteristics are...

Dimitrov, Dimitre

450

€18.5 Million in New Research Program Funding Announced, GE...  

NLE Websites -- All DOE Office Websites (Extended Search)

funding and collaboration models at its European Global Research Center near Munich, Germany. Mark Little, GE's Senior Vice President and Chief Technology Officer, and thought...

451

Using 3D Painting to Build and Repair Parts | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

a part or add material to repair an existing part. Cold spray is part of GE's expanded additive manufacturing toolkit. nteneh Kebbede, Manager of the Coating and Surface...

452

Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy  

E-Print Network (OSTI)

Photo-oxidation of Ge Nanocrystals: Kinetic Measurements byrate enhancement is due to a photo-chemical process. Thenanocrystals can be rapidly photo-oxidized. This oxidation

2008-01-01T23:59:59.000Z

453

Nano scale phase separation in Au-Ge system on ultra clean Si(100) surfaces  

SciTech Connect

We report on the phase separation in Au-Ge system leading to the formation of lobe-lobe (bi-lobed) Au-Ge nanostructures under ultra high vacuum (UHV) conditions ({approx_equal}3 x 10{sup -10} mbar) on clean Si(100) surfaces. For this study, {approx_equal}2.0 nm thick Au samples were grown on the substrate surface by molecular beam epitaxy. Thermal annealing was carried out inside the UHV chamber at temperature {approx_equal}500 deg. C and following this, nearly square shaped Au{sub x}Si{sub 1-x} nano structures of average length {approx_equal}48 nm were formed. A {approx_equal}2 nm Ge film was further deposited on the above surface while the substrate was kept at a temperature of {approx_equal}500 deg. C. Well ordered Au-Ge nanostructures where Au and Ge residing side by side (lobe-lobe structures) were formed. In our systematic studies, we show that, gold-silicide nanoalloy formation at the substrate (Si) surface is necessary for forming phase separated Au-Ge bilobed nanostructures. These results show that the Au-Ge bonding is unstable in nature. Electron microscopy (TEM, STEM-EDS, SEM) studies were carried out to determine the structure of Au-Ge nano systems. Rutherford backscattering spectrometry measurements show gold inter-diffusion into substrate while it is absent for Ge.

Rath, A.; Dash, J. K.; Juluri, R. R.; Satyam, P. V. [Institute of Physics, Sachivalaya Marg, Bhubaneswar-751005 (India); Schowalter, Marco; Mueller, Knut; Rosenauer, A. [Institute of Solid State Physics, University of Bremen, D-28359 Bremen (Germany)

2012-05-15T23:59:59.000Z

454

Chemical states and electronic structure of a HfO(-2) / Ge(001) interface  

SciTech Connect

We report the chemical bonding structure and valence band alignment at the HfO{sub 2}/Ge (001) interface by systematically probing various core level spectra as well as valence band spectra using soft x-rays at the Stanford Synchrotron Radiation Laboratory. We investigated the chemical bonding changes as a function of depth through the dielectric stack by taking a series of synchrotron photoemission spectra as we etched through the HfO{sub 2} film using a dilute HF-solution. We found that a very non-stoichiometric GeO{sub x} layer exists at the HfO{sub 2}/Ge interface. The valence band spectra near the Fermi level in each different film structure were carefully analyzed, and as a result, the valence band offset between Ge and GeO{sub x} was determined to be {Delta}E{sub v} (Ge-GeO{sub x}) = 2.2 {+-} 0.15 eV, and that between Ge and HfO{sub 2}, {Delta}E{sub v} (Ge-HfO{sub 2}) = 2.7 {+-} 0.15 eV.

Seo, Kang-ill; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.; Sun, Shiyu; Lee, Dong-Ick; Pianetta, Piero; /SLAC, SSRL; Saraswat, Krishna C.; /Stanford U., Elect.

2005-05-04T23:59:59.000Z

455

GE to DOE General Counsel; Re:Request for Comment on Large Capacity...  

Office of Environmental Management (EM)

Clothes Washers GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer...

456

E-Print Network 3.0 - amorphous ge bipolar Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

at Stony Brook, Department of Electrical Engineering and Computer Engineering, Optoelectronics Research Group Collection: Engineering 10 A New SiGe Base Lateral PNM Schottky...

457

Positron-annihilation measurements of vacancy formation in Ni and Ni(Ge)  

SciTech Connect

Vacancy formation in Ni and in dilute Ni(Ge) alloys was studied under thermal equilibrium conditions using positron-annihilation Doppler broadening. A monovacancy formation enthalpy of 1.8 +- 0.1 eV was determined for pure Ni; combining this result with that from previous tracer self-diffusion measurements, a monovacancy migration enthalpy of 1.1 +- 0.1 eV was also deduced. Analysis of the vacancy formation measurements in Ni(0.3 at.% Ge) and Ni(1 at.% Ge) yielded a value for the vacancy-Ge binding enthalpy of 0.20 +- 0.04 eV.

Smedskjaer, L.C.; Fluss, M.J.; Legnini, D.G.; Chason, M.K.; Siegel, R.W.

1982-03-01T23:59:59.000Z

458

Effect of the growth rate on the morphology and structural properties of hut-shaped Ge  

Science Journals Connector (OSTI)

The effect of Ge deposition rate on the morphology and structural properties of self-assembled Ge/Si(001) islands was studied. Ge/Si(001) layers were grown by solid-source molecular-beam epitaxy at 500?°C. We adjusted the Ge coverage, 6 monolayers (ML), and varied the Ge growth rate by a factor of 100, R = 0.02–2 ML s?1, to produce films consisting of hut-shaped Ge islands. The samples were characterized by scanning tunnelling microscopy, Raman spectroscopy, and Rutherford backscattering measurements. The mean lateral size of Ge nanoclusters decreases from 14.1 nm at R = 0.02 ML s?1 to 9.8 nm at R = 2 ML s?1. The normalized width of the size distribution shows non-monotonic behaviour as a function of R and has a minimum value of 19% at R = 2 ML s?1. Ge nanoclusters fabricated at the highest deposition rate demonstrate the best structural quality and the highest Ge content (~0.9).

A I Yakimov; A I Nikiforov; A V Dvurechenskii; V V Ulyanov; V A Volodin; R Groetzschel

2006-01-01T23:59:59.000Z

459

Phase equilibria, formation, crystal and electronic structure of ternary compounds in Ti-Ni-Sn and Ti-Ni-Sb ternary systems  

SciTech Connect

The phase equilibria of the Ti-Ni-Sn and Ti-Ni-Sb ternary systems have been studied in the whole concentration range by means of X-ray and EPM analyses at 1073 K and 873 K, respectively. Four ternary intermetallic compounds TiNiSn (MgAgAs-type), TiNi{sub 2-x}Sn (MnCu{sub 2}Al-type), Ti{sub 2}Ni{sub 2}Sn (U{sub 2}Pt{sub 2}Sn-type), and Ti{sub 5}NiSn{sub 3} (Hf{sub 5}CuSn{sub 3}-type) are formed in Ti-Ni-Sn system at 1073 K. The TiNi{sub 2}Sn stannide is characterized by homogeneity in the range of 50-47 at% of Ni. The Ti-Ni-Sb ternary system at 873 K is characterized by formation of three ternary intermetallic compounds, Ti{sub 0.8}NiSb (MgAgAs-type), Ti{sub 5}Ni{sub 0.45}Sb{sub 2.55} (W{sub 5}Si{sub 3}-type), and Ti{sub 5}NiSb{sub 3} (Hf{sub 5}CuSn{sub 3}-type). The solubility of Ni in Ti{sub 0.8}NiSb decreases number of vacancies in Ti site up to Ti{sub 0.91}Ni{sub 1.1}Sb composition. - Graphical abstract: Isothermal section of the Ti-Ni-Sn phase diagram and DOS distribution in hypothetical TiNi{sub 1+x}Sn solid solution. Highlights: Black-Right-Pointing-Pointer Ti-Ni-Sn phase diagram was constructed at 1073 K. Black-Right-Pointing-Pointer Four ternary compounds are formed: TiNiSn, TiNi{sub 2-x}Sn, Ti{sub 2}Ni{sub 2}Sn, and Ti{sub 5}NiSn{sub 3}. Black-Right-Pointing-Pointer Three ternary compounds exist in Ti-Ni-Sb system at 873 K. Black-Right-Pointing-Pointer The TiNi{sub 2}Sb compound is absent.

Romaka, V.V., E-mail: romakav@yahoo.com [Department of Materials Engineering and Applied Physics, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Rogl, P. [Institut fur Physikalische Chemie der Universitat Wien, Wahringerstrabe 42, A-1090 Wien (Austria); Romaka, L.; Stadnyk, Yu. [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Melnychenko, N.; Grytsiv, A.; Falmbigl, M. [Institut fur Physikalische Chemie der Universitat Wien, Wahringerstrabe 42, A-1090 Wien (Austria); Skryabina, N. [Perm State University, Bukireva Str. 15, 614990 Perm (Russian Federation)

2013-01-15T23:59:59.000Z

460

Measurement of the higher-order anisotropic flow coefficients for identified hadrons in Au$+$Au collisions at $\\sqrt{s_{_{NN}}}$ = 200 GeV  

E-Print Network (OSTI)

New PHENIX measurements of the anisotropic flow coefficients $v_2\\{\\Psi_2\\}$, $v_3\\{\\Psi_3\\}$, $v_4\\{\\Psi_4\\}$ and $v_4\\{\\Psi_2\\}$ for identified particles ($\\pi^{\\pm}$, $K^{\\pm}$, and $p+\\bar{p}$) obtained relative to the event planes $\\Psi_n$ in Au$+$Au collisions at $\\sqrt{s_{_{NN}}}$ = 200 GeV are presented as functions of collision centrality and particle transverse momenta $p_T$. The $v_n$ coefficients show characteristic patterns consistent with hydrodynamical expansion of the matter produced in the collisions. For each harmonic $n$, a modified valence quark number $n_q$ scaling plotting $v_n/(n_q)^{n/2}$ versus ${\\rm KE}_T/n_q$ is observed to yield a single curve for all the measured particle species for a broad range of transverse kinetic energies ${\\rm KE}_T$. A simultaneous blast wave model fit to the observed particle spectra and $v_n(p_T)$ coefficients identifies spatial eccentricities $s_n$ at freeze-out, which are much smaller than the initial-state geometric values.

Adare, A; Aidala, C; Ajitanand, N N; Akiba, Y; Al-Bataineh, H; Alexander, J; Aoki, K; Aramaki, Y; Atomssa, E T; Averbeck, R; Awes, T C; Azmoun, B; Babintsev, V; Bai, M; Baksay, G; Baksay, L; Barish, K N; Bassalleck, B; Basye, A T; Bathe, S; Baublis, V; Baumann, C; Bazilevsky, A; Belikov, S; Belmont, R; Bennett, R; Berdnikov, A; Berdnikov, Y; Bickley, A A; Bok, J S; Boyle, K; Brooks, M L; Buesching, H; Bumazhnov, V; Bunce, G; Butsyk, S; Camacho, C M; Campbell, S; Chen, C -H; Chi, C Y; Chiu, M; Choi, I J; Choudhury, R K; Christiansen, P; Chujo, T; Chung, P; Chvala, O; Cianciolo, V; Citron, Z; Cole, B A; Connors, M; Constantin, P; Csanád, M; Csörg?, T; Dahms, T; Dairaku, S; Danchev, I; Das, K; Datta, A; David, G; Denisov, A; Deshpande, A; Desmond, E J; Dietzsch, O; Dion, A; Donadelli, M; Drapier, O; Drees, A; Drees, K A; Durham, J M; Durum, A; Dutta, D; Edwards, S; Efremenko, Y V; Ellinghaus, F; Engelmore, T; Enokizono, A; En'yo, H; Esumi, S; Fadem, B; Fields, D E; Finger, M; Finger, M; Jr., \\,; Fleuret, F; Fokin, S L; Fraenkel, Z; Frantz, J E; Franz, A; Frawley, A D; Fujiwara, K; Fukao, Y; Fusayasu, T; Garishvili, I; Glenn, A; Gong, H; Gonin, M; Goto, Y; de Cassagnac, R Granier; Grau, N; Greene, S V; Perdekamp, M Grosse; Gunji, T; Gustafsson, H -Å; Haggerty, J S; Hahn, K I; Hamagaki, H; Hamblen, J; Han, R; Hanks, J; Hartouni, E P; Haslum, E; Hayano, R; He, X; Heffner, M; Hemmick, T K; Hester, T; Hill, J C; Hohlmann, M; Holzmann, W; Homma, K; Hong, B; Horaguchi, T; Hornback, D; Huang, S; Ichihara, T; Ichimiya, R; Ide, J; Ikeda, Y; Imai, K; Inaba, M; Isenhower, D; Ishihara, M; Isobe, T; Issah, M; Isupov, A; Ivanischev, D; Jacak, B V; Jia, J; Jin, J; Johnson, B M; Joo, K S; Jouan, D; Jumper, D S; Kajihara, F; Kametani, S; Kamihara, N; Kamin, J; Kang, J H; Kapustinsky, J; Karatsu, K; Kawall, D; Kawashima, M; Kazantsev, A V; Kempel, T; Khanzadeev, A; Kijima, K M; Kim, B I; Kim, D H; Kim, D J; Kim, E; Kim, E -J; Kim, S H; Kim, Y -J; Kinney, E; Kiriluk, K; Kiss, Á; Kistenev, E; Kochenda, L; Komkov, B; Konno, M; Koster, J; Kotchetkov, D; Kozlov, A; Král, A; Kravitz, A; Kunde, G J; Kurita, K; Kurosawa, M; Kwon, Y; Kyle, G S; Lacey, R; Lai, Y S; Lajoie, J G; Lebedev, A; Lee, D M; Lee, J; Lee, K; Lee, K B; Lee, K S; Leitch, M J; Leite, M A L; Leitner, E; Lenzi, B; Li, X; Liebing, P; Levy, L A Linden; Liška, T; Litvinenko, A; Liu, H; Liu, M X; Love, B; Luechtenborg, R; Lynch, D; Maguire, C F; Makdisi, Y I; Malakhov, A; Malik, M D; Manko, V I; Mannel, E; Mao, Y; Masui, H; Matathias, F; McCumber, M; McGaughey, P L; Means, N; Meredith, B; Miake, Y; Mignerey, A C; Mikeš, P; Miki, K; Milov, A; Mishra, M; Mitchell, J T; Mizuno, S; Mohanty, A K; Morino, Y; Morreale, A; Morrison, D P; Moukhanova, T V; Murata, J; Nagamiya, S; Nagle, J L; Naglis, M; Nagy, M I; Nakagawa, I; Nakamiya, Y; Nakamura, T; Nakano, K; Newby, J; Nguyen, M; Nouicer, R; Nyanin, A S; O'Brien, E; Oda, S X; Ogilvie, C A; Oka, M; Okada, K; Onuki, Y; Oskarsson, A; Ouchida, M; Ozawa, K; Pak, R; Pantuev, V; Papavassiliou, V; Park, I H; Park, J; Park, S K; Park, W J; Pate, S F; Pei, H; Peng, J -C; Pereira, H; Peresedov, V; Peressounko, D Yu; Pinkenburg, C; Pisani, R P; Proissl, M; Purschke, M L; Purwar, A K; Qu, H; Rak, J; Rakotozafindrabe, A; Ravinovich, I; Read, K F; Reygers, K; Reynolds, D; Riabov, V; Riabov, Y; Richardson, E; Roach, D; Roche, G; Rolnick, S D; Rosati, M; Rosen, C A; Rosendahl, S S E; Rosnet, P; Rukoyatkin, P; Ruži?ka, P; Sahlmueller, B; Saito, N; Sakaguchi, T; Sakashita, K; Samsonov, V; Sano, S; Sato, T; Sawada, S; Sedgwick, K; Seele, J; Seidl, R; Semenov, A Yu; Seto, R; Sharma, D; Shein, I; Shibata, T -A; Shigaki, K; Shimomura, M; Shoji, K; Shukla, P; Sickles, A; Silva, C L; Silvermyr, D; Silvestre, C; Sim, K S; Singh, B K; Singh, C P; Singh, V; Slune?ka, M; Soltz, R A; Sondheim, W E; Sorensen, S P; Sourikova, I V; Sparks, N A; Stankus, P W; Stenlund, E; Stoll, S P; Sugitate, T; Sukhanov, A; Sziklai, J; Takagui, E M; Taketani, A; Tanabe, R; Tanaka, Y; Tanida, K; Tannenbaum, M J; Tarafdar, S; Taranenko, A; Tarján, P; Themann, H; Thomas, T L; Todoroki, T; Togawa, M; Toia, A; Tomášek, L; Torii, H; Towell, R S; Tserruya, I; Tsuchimoto, Y; Vale, C; Valle, H; van Hecke, H W; Vazquez-Zambrano, E; Veicht, A; Velkovska, J; Vértesi, R; Vinogradov, A A; Virius, M; Vrba, V; Vznuzdaev, E; Wang, X R; Watanabe, D; Watanabe, K; Watanabe, Y; Wei, F; Wei, R; Wessels, J; White, S N; Winter, D; Wood, J P; Woody, C L; Wright, R M; Wysocki, M; Xie, W; Yamaguchi, Y L; Yamaura, K; Yang, R; Yanovich, A; Ying, J; Yokkaichi, S; You, Z; Young, G R; Younus, I; Yushmanov, I E; Zajc, W A; Zhang, C; Zhou, S; Zolin, L

2014-01-01T23:59:59.000Z

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461

Measurement of the higher-order anisotropic flow coefficients for identified hadrons in Au$+$Au collisions at $\\sqrt{s_{_{NN}}}$ = 200 GeV  

E-Print Network (OSTI)

New PHENIX measurements of the anisotropic flow coefficients $v_2\\{\\Psi_2\\}$, $v_3\\{\\Psi_3\\}$, $v_4\\{\\Psi_4\\}$ and $v_4\\{\\Psi_2\\}$ for identified particles ($\\pi^{\\pm}$, $K^{\\pm}$, and $p+\\bar{p}$) obtained relative to the event planes $\\Psi_n$ in Au$+$Au collisions at $\\sqrt{s_{_{NN}}}$ = 200 GeV are presented as functions of collision centrality and particle transverse momenta $p_T$. The $v_n$ coefficients show characteristic patterns consistent with hydrodynamical expansion of the matter produced in the collisions. For each harmonic $n$, a modified valence quark number $n_q$ scaling plotting $v_n/(n_q)^{n/2}$ versus ${\\rm KE}_T/n_q$ is observed to yield a single curve for all the measured particle species for a broad range of transverse kinetic energies ${\\rm KE}_T$. A simultaneous blast wave model fit to the observed particle spectra and $v_n(p_T)$ coefficients identifies spatial eccentricities $s_n$ at freeze-out, which are much smaller than the initial-state geometric values.

A. Adare; S. Afanasiev; C. Aidala; N. N. Ajitanand; Y. Akiba; H. Al-Bataineh; J. Alexander; K. Aoki; Y. Aramaki; E. T. Atomssa; R. Averbeck; T. C. Awes; B. Azmoun; V. Babintsev; M. Bai; G. Baksay; L. Baksay; K. N. Barish; B. Bassalleck; A. T. Basye; S. Bathe; V. Baublis; C. Baumann; A. Bazilevsky; S. Belikov; R. Belmont; R. Bennett; A. Berdnikov; Y. Berdnikov; A. A. Bickley; J. S. Bok; K. Boyle; M. L. Brooks; H. Buesching; V. Bumazhnov; G. Bunce; S. Butsyk; C. M. Camacho; S. Campbell; C. -H. Chen; C. Y. Chi; M. Chiu; I. J. Choi; R. K. Choudhury; P. Christiansen; T. Chujo; P. Chung; O. Chvala; V. Cianciolo; Z. Citron; B. A. Cole; M. Connors; P. Constantin; M. Csanád; T. Csörg?; T. Dahms; S. Dairaku; I. Danchev; K. Das; A. Datta; G. David; A. Denisov; A. Deshpande; E. J. Desmond; O. Dietzsch; A. Dion; M. Donadelli; O. Drapier; A. Drees; K. A. Drees; J. M. Durham; A. Durum; D. Dutta; S. Edwards; Y. V. Efremenko; F. Ellinghaus; T. Engelmore; A. Enokizono; H. En'yo; S. Esumi; B. Fadem; D. E. Fields; M. Finger; M. Finger; \\, Jr.; F. Fleuret; S. L. Fokin; Z. Fraenkel; J. E. Frantz; A. Franz; A. D. Frawley; K. Fujiwara; Y. Fukao; T. Fusayasu; I. Garishvili; A. Glenn; H. Gong; M. Gonin; Y. Goto; R. Granier de Cassagnac; N. Grau; S. V. Greene; M. Grosse Perdekamp; T. Gunji; H. -Å. Gustafsson; J. S. Haggerty; K. I. Hahn; H. Hamagaki; J. Hamblen; R. Han; J. Hanks; E. P. Hartouni; E. Haslum; R. Hayano; X. He; M. Heffner; T. K. Hemmick; T. Hester; J. C. Hill; M. Hohlmann; W. Holzmann; K. Homma; B. Hong; T. Horaguchi; D. Hornback; S. Huang; T. Ichihara; R. Ichimiya; J. Ide; Y. Ikeda; K. Imai; M. Inaba; D. Isenhower; M. Ishihara; T. Isobe; M. Issah; A. Isupov; D. Ivanischev; B. V. Jacak; J. Jia; J. Jin; B. M. Johnson; K. S. Joo; D. Jouan; D. S. Jumper; F. Kajihara; S. Kametani; N. Kamihara; J. Kamin; J. H. Kang; J. Kapustinsky; K. Karatsu; D. Kawall; M. Kawashima; A. V. Kazantsev; T. Kempel; A. Khanzadeev; K. M. Kijima; B. I. Kim; D. H. Kim; D. J. Kim; E. Kim; E. -J. Kim; S. H. Kim; Y. -J. Kim; E. Kinney; K. Kiriluk; Á. Kiss; E. Kistenev; L. Kochenda; B. Komkov; M. Konno; J. Koster; D. Kotchetkov; A. Kozlov; A. Král; A. Kravitz; G. J. Kunde; K. Kurita; M. Kurosawa; Y. Kwon; G. S. Kyle; R. Lacey; Y. S. Lai; J. G. Lajoie; A. Lebedev; D. M. Lee; J. Lee; K. Lee; K. B. Lee; K. S. Lee; M. J. Leitch; M. A. L. Leite; E. Leitner; B. Lenzi; X. Li; P. Liebing; L. A. Linden Levy; T. Liška; A. Litvinenko; H. Liu; M. X. Liu; B. Love; R. Luechtenborg; D. Lynch; C. F. Maguire; Y. I. Makdisi; A. Malakhov; M. D. Malik; V. I. Manko; E. Mannel; Y. Mao; H. Masui; F. Matathias; M. McCumber; P. L. McGaughey; N. Means; B. Meredith; Y. Miake; A. C. Mignerey; P. Mikeš; K. Miki; A. Milov; M. Mishra; J. T. Mitchell; S. Mizuno; A. K. Mohanty; Y. Morino; A. Morreale; D. P. Morrison; T. V. Moukhanova; J. Murata; S. Nagamiya; J. L. Nagle; M. Naglis; M. I. Nagy; I. Nakagawa; Y. Nakamiya; T. Nakamura; K. Nakano; J. Newby; M. Nguyen; R. Nouicer; A. S. Nyanin; E. O'Brien; S. X. Oda; C. A. Ogilvie; M. Oka; K. Okada; Y. Onuki; A. Oskarsson; M. Ouchida; K. Ozawa; R. Pak; V. Pantuev; V. Papavassiliou; I. H. Park; J. Park; S. K. Park; W. J. Park; S. F. Pate; H. Pei; J. -C. Peng; H. Pereira; V. Peresedov; D. Yu. Peressounko; C. Pinkenburg; R. P. Pisani; M. Proissl; M. L. Purschke; A. K. Purwar; H. Qu; J. Rak; A. Rakotozafindrabe; I. Ravinovich; K. F. Read; K. Reygers; D. Reynolds; V. Riabov; Y. Riabov; E. Richardson; D. Roach; G. Roche; S. D. Rolnick; M. Rosati; C. A. Rosen; S. S. E. Rosendahl; P. Rosnet; P. Rukoyatkin; P. Ruži?ka; B. Sahlmueller; N. Saito; T. Sakaguchi; K. Sakashita; V. Samsonov; S. Sano; T. Sato; S. Sawada; K. Sedgwick; J. Seele; R. Seidl; A. Yu. Semenov; R. Seto; D. Sharma; I. Shein; T. -A. Shibata; K. Shigaki; M. Shimomura; K. Shoji; P. Shukla; A. Sickles; C. L. Silva; D. Silvermyr; C. Silvestre; K. S. Sim; B. K. Singh; C. P. Singh; V. Singh; M. Slune?ka; R. A. Soltz; W. E. Sondheim; S. P. Sorensen; I. V. Sourikova; N. A. Sparks; P. W. Stankus; E. Stenlund; S. P. Stoll; T. Sugitate; A. Sukhanov; J. Sziklai; E. M. Takagui; A. Taketani; R. Tanabe; Y. Tanaka; K. Tanida; M. J. Tannenbaum; S. Tarafdar; A. Taranenko; P. Tarján; H. Themann; T. L. Thomas; T. Todoroki; M. Togawa; A. Toia; L. Tomášek; H. Torii; R. S. Towell; I. Tserruya; Y. Tsuchimoto; C. Vale; H. Valle; H. W. van Hecke; E. Vazquez-Zambrano; A. Veicht; J. Velkovska; R. Vértesi; A. A. Vinogradov; M. Virius; V. Vrba; E. Vznuzdaev; X. R. Wang; D. Watanabe; K. Watanabe; Y. Watanabe; F. Wei; R. Wei; J. Wessels; S. N. White; D. Winter; J. P. Wood; C. L. Woody; R. M. Wright; M. Wysocki; W. Xie; Y. L. Yamaguchi; K. Yamaura; R. Yang; A. Yanovich; J. Ying; S. Yokkaichi; Z. You; G. R. Young; I. Younus; I. E. Yushmanov; W. A. Zajc; C. Zhang; S. Zhou; L. Zolin

2014-12-02T23:59:59.000Z

462

Magnetic X-Ray Scattering Study of GdCo2Ge2 and NdCo2Ge2  

SciTech Connect

The results of magnetic x-ray resonant exchange scattering (XRES) experiments are important to the development of an understanding of magnetic interactions in materials. The advantages of high Q resolution, polarization analysis, and the ability to study many different types of materials make it a vital tool in the field of condensed matter physics. Though the concept of XRES was put forth by Platzman and Tzoar in 1970, the technique did not gain much attention until the work of Gibbs and McWhan et al. in 1988. Since then, the technique of XRES has grown immensely in use and applicability. Researchers continue to improve upon the procedure and detection capabilities in order to study magnetic materials of all kinds. The XRES technique is particularly well suited to studying the rare earth metals because of the energy range involved. The resonant L edges of these elements fall between 5-10 KeV. Resonant and nonresonant x-ray scattering experiments were performed in order to develop an understanding of the magnetic ordering in GdCo{sub 2}Ge{sub 2} and NdCo{sub 2}Ge{sub 2}.

William Good

2002-08-27T23:59:59.000Z

463

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

SciTech Connect

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

464

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

465

Second harmonic generation from Ge doped SiO{sub 2} (Ge{sub x}(SiO{sub 2}){sub 1?x}) thin films grown by sputtering  

SciTech Connect

Second-order nonlinear optical properties of sputter-deposited Ge-doped SiO{sub 2} thin films were investigated. It was shown that the second-order nonlinearity of SiO{sub 2}, which vanishes in the electric-dipole approximation due to the centrosymmetric structure, can be significantly enhanced by Ge doping. The observed maximum value of d{sub 33} was 8.2 pm/V, which is 4 times larger than d{sub 22} of ?-BaB{sub 2}O{sub 4} crystal. Strong correlation was observed between the d{sub eff} values and the electron spin resonance signals arising from GeP{sub b} centers, suggesting that GeP{sub b} centers are the most probable origin of the large second-order nonlinearity.

Kawamura, Ibuki; Imakita, Kenji; Fujii, Minoru; Hayashi, Shinji [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan)] [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan)

2013-11-11T23:59:59.000Z

466

Correlation of defect centers with second-harmonic generation in Ge-doped and Ge–P-doped silica-core single-mode fibers  

Science Journals Connector (OSTI)

The origin of frequency doubling in Ge-doped silica-core single-mode glass fibers has been investigated with electron-spin-resonance spectrometry. Correlations have been observed...

Tsai, T E; Saifi, M A; Friebele, E J; Österberg, U; Griscom, D L

1989-01-01T23:59:59.000Z

467

Microsoft Word - Poster Abstract_2010_GE Global Reserach.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

current collector geometry on ohmic resistance current collector geometry on ohmic resistance H. Cao, S. Gaunt, T. Striker and M.J. Alinger* GE Global Research, One Research Circle, Niskayuna, NY 12309 In order to directly measure the cathode current collector ohmic resistance contribution to the total cell resistance, contact resistance measurements are typically made. In addition to starting cell resistance contributions, these tests provide data regarding resistance changes over time for interpretation of performance degradation. However, the geometries of the current collection used during this testing are often not directly representative of operational fuel cells. Thus, an experimental study was initiated to investigate the effect of various interconnect geometries and their influence on Area

468

Direct Detection of Sub-GeV Dark Matter  

SciTech Connect

Direct detection strategies are proposed for dark matter particles with MeV to GeV mass. In this largely unexplored mass range, dark matter scattering with electrons can cause single-electron ionization signals, which are detectable with current technology. Ultraviolet photons, individual ions, and heat are interesting alternative signals. Focusing on ionization, we calculate the expected dark matter scattering rates and estimate the sensitivity of possible experiments. Backgrounds that may be relevant are discussed. Theoretically interesting models can be probed with existing technologies, and may even be within reach using ongoing direct detection experiments. Significant improvements in sensitivity should be possible with dedicated experiments, opening up a window to new regions in dark matter parameter space.

Essig, Rouven; Mardon, Jeremy; Volansky, Tomer

2012-03-20T23:59:59.000Z

469

Axial Ge/Si nanowire heterostructure tunnel FETs  

SciTech Connect

The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

Picraux, Sanuel T [Los Alamos National Laboratory; Daych, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

470

Investigation of combinatorial coevaporated thin film Cu{sub 2}ZnSnS{sub 4}. I. Temperature effect, crystalline phases, morphology, and photoluminescence  

SciTech Connect

Cu{sub 2}ZnSnS{sub 4} is a promising low-cost, nontoxic, earth-abundant absorber material for thin-film solar cell applications. In this study, combinatorial coevaporation was used to synthesize individual thin-film samples spanning a wide range of compositions at low (325?°C) and high (475?°C) temperatures. Film composition, grain morphology, crystalline-phase and photo-excitation information have been characterized by x-ray fluorescence, scanning electron microscopy, x-ray diffraction, Raman spectroscopy, and photoluminescence imaging and mapping. Highly textured columnar grain morphology is observed for film compositions along the ZnS-Cu{sub 2}ZnSnS{sub 4}-Cu{sub 2}SnS{sub 3} tie line in the quasi-ternary Cu{sub 2}S-ZnS-SnS{sub 2} phase system, and this effect is attributed to structural similarity between the Cu{sub 2}ZnSnS{sub 4}, Cu{sub 2}SnS{sub 3}, and ZnS crystalline phases. At 475?°C growth temperature, Sn-S phases cannot condense because of their high vapor pressures. As a result, regions that received excess Sn flux during growth produced compositions falling along the ZnS-Cu{sub 2}ZnSnS{sub 4}-Cu{sub 2}SnS{sub 3} tie line. Room-temperature photoluminescence imaging reveals a strong correlation for these samples between film composition and photoluminescence intensity, where film regions with Cu/Sn ratios greater than ?2 show strong photoluminescence intensity, in comparison with much weaker photoluminescence in regions that received excess Sn flux during growth or subsequent processing. The observed photoluminescence quenching in regions that received excess Sn flux is attributed to the effects of Sn-related native point defects in Cu{sub 2}ZnSnS{sub 4} on non-radiative recombination processes. Implications for processing and performance of Cu{sub 2}ZnSnS{sub 4} solar cells are discussed.

Du, Hui; Yan, Fei; Young, Matthew; To, Bobby; Jiang, Chun-Sheng; Dippo, Pat; Kuciauskas, Darius; Teeter, Glenn, E-mail: glenn.teeter@nrel.gov [National Renewable Energy Laboratory, 15013 Denver West Parkway, MS3218, Golden, Colorado 80401 (United States); Chi, Zhenhuan [Renishaw Incorporated, 5277 Trillium Blvd., Hoffman Estates, Illinois 60192 (United States); Lund, Elizabeth A.; Hancock, Chris; Hlaing OO, Win Maw; Scarpulla, Mike A. [Departments of Chemical Engineering, Electrical and Computer Engineering, and Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)

2014-05-07T23:59:59.000Z

471

Sol–gel synthesis of SnO{sub 2}–MgO nanoparticles and their photocatalytic activity towards methylene blue degradation  

SciTech Connect

Graphical abstract: - Highlights: • A simple sol–gel method for the synthesis of SnO{sub 2}–MgO nanoparticles is reported. • Band gap of SnO{sub 2} can be tuned by varying the magnesium content in SnO{sub 2}–MgO. • SnO{sub 2}–MgO shows good photocatalytic activity towards degradation of methylene blue. - Abstract: SnO{sub 2}–MgO mixed metal oxide nanoparticles were prepared by a simple sol–gel method. The nanoparticles were characterized by power X-ray diffraction, scanning electron microscopy coupled with energy dispersive X-ray analysis, transmission electron microscopy and UV–vis diffuse reflectance spectroscopy. The XRD results indicate the formation of mixed metal oxide nanoparticles and also a decrease of SnO{sub 2} crystallite size in the mixed metal oxide nanoparticles with increasing magnesium oxide content. The reflectance spectroscopy results show a blue shift of the band gap of SnO{sub 2} in the mixed metal oxide nanoparticles. The photocatalytic activity of the SnO{sub 2}–MgO nanoparticles was tested using the photodegradation of aqueous methylene blue in the presence of sunlight. The results indicate that the mixed metal oxide nanoparticles possess higher efficiency for the photodegradation of methylene blue compared to pure SnO{sub 2} nanoparticles.

Bayal, Nisha; Jeevanandam, P., E-mail: jeevafcy@iitr.ernet.in

2013-10-15T23:59:59.000Z

472

Experimental Cryogenic Modeling and Noise of SiGe HBTs Joseph C. Bardin and Sander Weinreb  

E-Print Network (OSTI)

Experimental Cryogenic Modeling and Noise of SiGe HBTs Joseph C. Bardin and Sander Weinreb contender for extremely low noise, cryogenically cooled amplifiers. This paper begins with a procedureGe), cryogenic, low noise amplifier (LNA), noise parameters, transistor modeling. I. INTRODUCTION Very low

Weinreb, Sander

473

Optical gain from the direct gap transition of Ge-on-Si at room temperature  

E-Print Network (OSTI)

We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.

Liu, Jifeng

474

Infrared absorption of n-type tensile-strained Ge-on-Si  

E-Print Network (OSTI)

We analyze the IR absorption of tensile-strained, n-type Ge for Si-compatible laser applications. A strong intervalley scattering from the indirect L valleys to the direct ? valley in n[superscript +] Ge-on-Si is reported ...

Wang, Xiaoxin

475

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes  

E-Print Network (OSTI)

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840GHz gain-absorption-charge- multiplication Ge/Si avalanche photodiode with an enhanced gain- bandwidth-product of 845GHz at a wavelength photodiodes (APDs) References and links 1. R. B. Emmons, "Avalanche photodiode frequency response," J. Appl

Bowers, John

476

University of California and HRL Laboratories, LLC. All rights reserved. SiGe/Si SUPERLATTICE COOLERS  

E-Print Network (OSTI)

for SiGe/Si superlattice coolers. SiGe is a good thermoelectric material for high temperature and thermally in parallel, similar to conventional thermoelectric devices, and thus achieve large cooling of the barriers to further increase clock speeds and decrease feature sizes. Thermoelectric (TE) refrigeration

477

Experimental limits on massive neutrinos from e(+)e(-) annihilations at 29 GeV  

E-Print Network (OSTI)

A search was made in 29-GeV e(+)e(-) annihilations for massive neutrinos decaying to e(±)X(?)(?) where X is a muon or meson. A 300-pb(-1) data sample yielded just one candidate event with a mass m(e)X>1.8 GeV. Significant limits are found for new...

Baringer, Philip S.; Akerlof, C.; Chapman, J.; Errede, D.; Ken, M. T.; Meyer, D. I.; Neal, H.; Nitz,D.; Thun, R.; Tschirhart, R.; Derrick, M.

1988-02-01T23:59:59.000Z

478

Electrical and thermal properties of neutron-transmutation-doped Ge at 20 mK  

Science Journals Connector (OSTI)

We report on hot-electron effects in neutron-transmutation-doped Ge (NTD Ge) near 20 mK. Both static and dynamic electrical properties were measured and compared with a model including both variable-range-hopping conduction and hot-electron effects.

Ning Wang; F. C. Wellstood; B. Sadoulet; E. E. Haller; J. Beeman

1990-02-15T23:59:59.000Z

479

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication Applications  

E-Print Network (OSTI)

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication ApplicationsGe/Si-based optoelectronic devices are described. These include photodiodes, photoreceivers and modulators. In There is immense interest in the realization of Si-based optoelectronic devices, optoelectronic integrated circuits

Rieh, Jae-Sung

480

Advanced Design of Broadband Distributed Amplifier using a SiGe BiCMOS Technology  

E-Print Network (OSTI)

Advanced Design of Broadband Distributed Amplifier using a SiGe BiCMOS Technology Gye-An Lee distributed amplifier for optical communication applications using SiGe BiCMOS technology. The design of some techniques are needed at such high frequencies. Main obstacles in the design of a silicon- based distributed

De Flaviis, Franco

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481

The BErkeley Lab Laser Accelerator (BELLA): A 10 GeV Laser Plasma Accelerator  

E-Print Network (OSTI)

used at the world's first x-ray free electron laser (FEL) at the LCLS at SLAC, and the lower energyThe BErkeley Lab Laser Accelerator (BELLA): A 10 GeV Laser Plasma Accelerator W.P. Leemansa,b,c , R, USA Abstract. An overview is presented of the design of a 10 GeV laser plasma accelerator (LPA

Geddes, Cameron Guy Robinson

482

Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche  

E-Print Network (OSTI)

-speed InP /InGaAsP /InGaAs avalanche photodiodes grown by chemical beam epitaxy," IEEE J. Quantum ElectronResonant normal-incidence separate-absorption- charge-multiplication Ge/Si avalanche photodiodes the impedance of separate-absorption-charge- multiplication Ge/Si avalanche photodiodes (APD) is characterized

Bowers, John

483

Donor-vacancy pairs in irradiated n-Ge: A searching look at the problem  

SciTech Connect

The present situation concerning the identification of vacancy-donor pairs in irradiated n-Ge is discussed. The challenging points are the energy states of these defects deduced from DLTS spectra. Hall effect data seem to be at variance with some important conclusions drawn from DLTS measurements. Critical points of the radiation-produced defect modeling in n-Ge are highlighted.

Emtsev, Vadim; Oganesyan, Gagik [IoffePhysicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ulitsa 26, 194021 St. Petersburg (Russian Federation)

2014-02-21T23:59:59.000Z

484