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1

New Rate Schedule CV-UUP1 UNITED STATES DEPARTMENT OF ENERGY  

NLE Websites -- All DOE Office Websites (Extended Search)

UUP1 UNITED STATES DEPARTMENT OF ENERGY WESTERN AREA POWER ADMINISTRATION CENTRAL VALLEY PROJECT SCHEDULE OF RATE FOR UNRESERVED USE PENALTIES Effective: October 1, 2011, through...

2

New Rate Schedule CV-UUP1 UNITED STATES DEPARTMENT OF ENERGY  

NLE Websites -- All DOE Office Websites (Extended Search)

UUP1 UUP1 UNITED STATES DEPARTMENT OF ENERGY WESTERN AREA POWER ADMINISTRATION CENTRAL VALLEY PROJECT SCHEDULE OF RATE FOR UNRESERVED USE PENALTIES Effective: October 1, 2011, through September 30, 2016. Available: Within the marketing area served by the Western Area Power Administration (Western), Sierra Nevada Customer Service Region (SNR). Applicable: Western added this penalty rate for unreserved use of transmission service for the Central Valley Project, California-Oregon Transmission Project, and Pacific Alternating Current Intertie effective October 1, 2011. This penalty is applicable to point-to-point (PTP) transmission customers using transmission not reserved or in excess of reservation or network customers when they schedule delivery of off-system non-designated purchases using transmission capacity

3

Charge transport in mixed CdSe and CdTe colloidal nanocrystal films  

E-Print Network (OSTI)

We report the influence of trap states on charge transport through films of mixed CdTe and CdSe nanocrystals (NCs) between lateral electrodes, through layered films of CdTe and CdSe NCs in a layered geometry, and through ...

Bawendi, Moungi G.

4

Phonon conduction in PbSe, PbTe, and PbTe1?xSex from first-principles calculations  

E-Print Network (OSTI)

We apply first-principles calculations to lead selenide (PbSe) and lead telluride (PbTe) and their alloys (PbTe[subscript 1?x]Se[subscript x]), which are potentially good thermoelectric materials, to investigate their ...

Tian, Zhiting

5

Mechanical properties of highly oriented FeSe0.5Te0.5 superconductor  

Science Conference Proceedings (OSTI)

We have synthesized highly oriented samples of the superconducting compound FeSe0.5Te0.5 and investigated its mechanical properties. These samples were characterized by scanning electron microscopy(SEM) with energy-dispersive analysis

Jorge Luiz Pimentel Júnior; Paulo Pureur; Cristiano Santos Lopes; Francisco Carlos Serbena; Carlos Eugênio Foerster; Simone Aparecida da Silva; Alcione Roberto Jurelo; Adilson Luiz Chinelatto

2012-01-01T23:59:59.000Z

6

Spray Deposition of High Quality CuInSe2 and CdTe Films: Preprint  

DOE Green Energy (OSTI)

A number of different ink and deposition approaches have been used for the deposition of CuInSe2 (CIS), Cu(In,Ga)Se2 (CIGS), and CdTe films. For CIS and CIGS, soluble precursors containing Cu, In, and Ga have been developed and used in two ways to produce CIS films. In the first, In-containing precursor films were sprayed on Mo-coated glass substrates and converted by rapid thermal processing (RTP) to In2Se3. Then a Cu-containing film was sprayed down on top of the In2Se3 and the stacked films were again thermally processed to give CIS. In the second approach, the Cu-, In-, and Ga-containing inks were combined in the proper ratio to produce a mixed Cu-In-Ga ink that was sprayed on substrates and thermally processed to give CIGS films directly. For CdTe deposition, ink consisting of CdTe nanoparticles dispersed in methanol was prepared and used to spray precursor films. Annealing these precursor films in the presence of CdCl2 produced large-grained CdTe films. The films were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). Optimized spray and processing conditions are crucial to obtain dense, crystalline films.

Curtis, C. J.; van Hest, M.; Miedaner, A.; Leisch, J.; Hersh, P.; Nekuda, J.; Ginley, D. S.

2008-05-01T23:59:59.000Z

7

Photoluminescence studies of type-II CdSe/CdTe superlattices  

SciTech Connect

CdSe/CdTe type-II superlattices grown on GaSb substrates by molecular beam epitaxy are studied using time-resolved and steady-state photoluminescence (PL) spectroscopy at 10 K. The relatively long carrier lifetime of 188 ns observed in time-resolved PL measurements shows good material quality. The steady-state PL peak position exhibits a blue shift with increasing excess carrier concentration. Self-consistent solutions of the Schroedinger and Poisson equations show that this effect can be explained by band bending as a result of the spatial separation of electrons and holes, which is critical confirmation of a strong type-II band edge alignment between CdSe and CdTe.

Li Jingjing; Johnson, Shane R.; Wang Shumin; Ding Ding; Ning Cunzheng; Zhang Yonghang [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287-5706 (United States); School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706 (United States); Yin Leijun [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287-5706 (United States); Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Skromme, B. J. [School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706 (United States); Liu Xinyu; Furdyna, Jacek K. [Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

2012-08-06T23:59:59.000Z

8

CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy  

SciTech Connect

CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63 {+-} 0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.

Li Jingjing; Liu Shi; Wang Shumin; Ding Ding; Johnson, Shane R.; Zhang Yonghang [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Liu Xinyu; Furdyna, Jacek K. [Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Smith, David J. [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

2012-03-19T23:59:59.000Z

9

Disordered stoichiometric nanorods and ordered off-stoichiometric nanoparticles in n-type thermoelectric Bi?Te?.?Se?.?  

E-Print Network (OSTI)

N-type Bi?Te?.?Se?.? bulk thermoelectric materials with peak ZT values up to ?1 were examined by transmission electron microscopy and electron diffraction. Two nanostructural features were found: (i) a structural modulation ...

Carlton, Chris E.

10

Role of polycrystallinity in CdTe and CuInSe[sub 2] photovoltaic cells  

DOE Green Energy (OSTI)

The limiting role of polycrystallinity in thin-film solar calls has been reduced somewhat during the past year, and efficiencies of both CdTe and CuInSe[sub 2] cells are approaching 15%. Quantitative separation of loss mechanisms shows that individual losses, with the exception of forward recombination current, can be made comparable to their single crystal counterparts. One general manifestation of the extraneous trapping states in that the voltage of all polycrystalline thin-film cells drifts upward by 10--50 mV following the onset of illumination.

Sites, J.R. (Colorado State Univ., Fort Collins, CO (United States))

1992-11-01T23:59:59.000Z

11

Molecular beam epitaxy growth of PbSe on Si (211) using a ZnTe buffer layer  

Science Conference Proceedings (OSTI)

The authors report the results of successful growth of single crystalline PbSe on Si (211) substrates with ZnTe as a buffer layer by molecular beam epitaxy. Single crystalline PbSe with (511) orientation was achieved on ZnTe/Si (211), as evidenced by RHEED patterns indicative of 2 dimensional (2D) growth, x ray diffraction rocking curves with a full width at half maximum as low as 153 arc sec and mobility as large as 1.1x10{sup 4}cm{sup 2}V{sup -1}s{sup -1} at 77 K. Cross hatch patterns were found on the PbSe(511) surface in Nomarski filtered microscope images suggesting the presence of a surface thermal strain relaxation mechanism, which was confirmed by Fourier transformed high resolution transmission electron microscope images.

Wang, X. J.; Chang, Y.; Hou, Y. B.; Becker, C. R.; Kodama, R.; Aqariden, F.; Sivananthan, S. [Microphysics Laboratory, Physics Department, University of Illinois at Chicago, Illinois 60607 (United States); Microphysics Laboratory, Physics Department, University of Illinois at Chicago, Illinois 60607 and Physics Department and Quantum Functional Semiconductor Research Center, Dongguk University 3-26, Seoul 100-715 (Korea, Republic of); Microphysics Laboratory, Physics Department, University of Illinois at Chicago, Illinois 60607 (United States); EPIR Technologies, Bolingbrook, Illinois 60440 (United States); Microphysics Laboratory, Physics Department, University of Illinois at Chicago, Illinois 60607 and EPIR Technologies, Bolingbrook, Illinois 60440 (United States)

2011-09-15T23:59:59.000Z

12

Thin-film CdTe and CuInSe{sub 2} photovoltaic technologies  

DOE Green Energy (OSTI)

Total-area conversion efficiency of 15%--15.8% have been achieved for thin-film CdTe and CIS solar cells. Modules with power output of 5--53 W have been demonstrated by several groups world-wide. Critical processes and reaction pathways for achieving excellent PV devices have been eluciated. Research, development and technical issues have been identified, which could result in potential improvements in device and module performance. A 1-kW thin-film CdTe array has been installed and is being tested. Multimegawatt thin-film CdTe manufacturing plants are expected to be completed in 1-2 years.

Ullal, H.S.; Zweibel, K.; von Roedern, B.G.

1993-08-01T23:59:59.000Z

13

Polycrystalline CuInSe{sub 2} and CdTe PV solar cells. Annual subcontract report, 15 April 1993--14 April 1994  

DOE Green Energy (OSTI)

This is an annual technical report on the Phase 2 of a three-year phased research program. The principal objective of the research project is to develop novel and low-cost processes for the fabrication of stable and efficient CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} and CdTe polycrystalline-thin-film solar cells using reliable techniques amenable to scale-up for economic, large-scale manufacture. The aims are to develop a process for the non-toxic selenization so as to avoid the use of extremely toxic H{sub 2}Se in the fabrication of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} thin-film solar cells; to optimize selenization parameters; to develop a process for the fabrication of CdTe solar cells using Cd and Te layers sputtered from elemental targets; to develop an integrated process for promoting the interdiffusion between Cd/Te layers, CdTe phase formation, grain growth, type conversion, and junction formation; to improve adhesion; to minimize residual stresses; to improve the metallic back-contact; to improve the uniformity, stoichiometry, and morphology of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} and CdTe thin films; and to improve the efficiency of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} and CdTe solar cells.

Dhere, N.G. [Florida Solar Energy Center, Cape Canaveral, FL (United States)

1994-11-01T23:59:59.000Z

14

Polycrystalline CuInSe{sub 2} and CdTe solar cells. Annual subcontract report, April 15, 1992--April 14, 1993  

DOE Green Energy (OSTI)

The principal objective of the research project is to develop processes for the fabrication of cadmium-telluride, CdTe, and copper-indium-gallium-diselenide, Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2}, polycrystalline-thin-film solar cells using techniques that can be scaled-up for economic manufacture on a large scale. The aims are to fabricate CdTe solar cells using Cd and Te layers sputtered from elemental targets; to promote the interdiffusion between Cd/Te layers, CdTe phase formation, and grain growth; to utilize non-toxic selenization so as to avoid the use of extremely toxic H{sub 2}Se in the fabrication of Cu(In{sub l{minus}x}Ga{sub x})Se{sub 2} thin-film solar cells; to optimize selenization parameters; to improve adhesion; to minimize residual stresses; to improve the uniformity, stoichiometry, and morphology of CdTe and Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2} thin films, and the efficiency of CdTe and Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2} solar cells.

Dhere, N.G. [Florida Solar Energy Center, Cape Canaveral, FL (United States)

1994-08-01T23:59:59.000Z

15

X-ray diffraction study of (TlInSe{sub 2}){sub 1-x}(TlGaTe{sub 2}){sub x} crystal system  

Science Conference Proceedings (OSTI)

The crystallographic and dynamic characteristics of TlInSe{sub 2} and TlGaTe{sub 2} crystals have been studied by X-ray diffraction in the temperature range of 85-320 K. The temperature dependences of the unit-cell parameters a of TlInSe{sub 2} and TlGaTe{sub 2} crystals, as well as their coefficients of thermal expansion along the [100] direction, are determined. The concentration dependences of the unit-cell parameters a and c for (TlInSe{sub 2}){sub 1-x}(TlGaTe{sub 2}){sub x} crystals are measured. Anomalies are found in the temperature dependences of the unit-cell parameters a and, correspondingly, the coefficient of thermal expansion, indicating the existence of phase transitions in TlInSe{sub 2} and TlGaTe{sub 2} crystals.

Sheleg, A. U., E-mail: sheleg@ifttp.bas-net.by; Zub, E. M.; Yachkovskii, A. Ya. [National Academy of Sciences of Belarus, State Scientific and Production Association, Scientific and Practical Materials Research Center (Belarus); Mustafaeva, S. N.; Kerimova, E. M. [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan)

2012-03-15T23:59:59.000Z

16

Development of a computer model for polycrystalline thin-film CuInSe sub 2 and CdTe solar cells  

DOE Green Energy (OSTI)

This report describes work to develop a highly accurate numerical model for CuInSe{sub 2} and CdTe solar cells. ADEPT (A Device Emulation Program and Toolbox), a one-dimensional semiconductor device simulation code developed at Purdue University, was used as the basis of this model. An additional objective was to use ADEPT to analyze the performance of existing and proposed CuInSe{sub 2} and CdTe solar cell structures. The work is being performed in two phases. The first phase involved collecting device performance parameters, cell structure information, and material parameters. This information was used to construct the basic models to simulate CuInSe{sub 2} and CdTe solar cells. This report is a tabulation of information gathered during the first phase of this project on the performance of existing CuInSe{sub 2} and CdTe solar cells, the material properties of CuInSr{sub 2}, CdTe, and CdS, and the optical absorption properties of CuInSe{sub 2}, CdTe, and CdS. The second phase will entail further development and the release of a version of ADEPT tailored to CuInSe{sub 2} and CdTe solar cells that can be run on a personal computer. In addition, ADEPT will be used to analyze the performance of existing and proposed CuInSe{sub 2} and CdTe solar cell structures. 110 refs.

Gray, J.L.; Schwartz, R.J.; Lee, Y.J. (Purdue Univ., Lafayette, IN (United States))

1992-04-01T23:59:59.000Z

17

High-temperature Thermoelectric Properties of Ag2Se.5Te.5  

Science Conference Proceedings (OSTI)

Symposium, Alloys and Compounds for Thermoelectric and Solar Cell Applications II ... This particular alloy displays very low thermal conductivity and competitive ... of Cu2ZnSn(S,Se)4 Thin-films with Conversion Efficiency Higher Than 8%.

18

Reversible tuning of the surface state in a pseudobinary Bi2(Te-Se)3 topological insulator  

SciTech Connect

We use angle-resolved photoemission spectroscopy to study a nontrivial surface state in a pseudobinary Bi2Te2.8Se0.2 topological insulator. We show that, unlike previously studied binaries, this is an intrinsic topological insulator with the conduction bulk band residing well above the chemical potential. Our data indicate that under a good vacuum condition there are no significant aging effects for more than two weeks after cleaving. We also demonstrate that the shift of the Kramers point at low temperature is caused by UV-assisted absorption of molecular hydrogen. Our findings pave the way for applications of these materials in devices and present an easy scheme to tune their properties.

Jiang, Rui; Wang, Lin-Lin; Huang, Mianliang; Dhaka, Rajendra S.; Johnson, Duane D.; Lograsso, Thomas A.; Kaminski, Adam

2012-08-10T23:59:59.000Z

19

Physical properties, crystal and magnetic structure of layered Fe[subscript 1.11]Te[subscript 1;#8722;x]Se[subscript x] superconductors  

SciTech Connect

The physical and structural properties of Fe1.11Te and Fe1.11Te0.5Se0.5 have been investigated by means of X-ray and neutron diffraction as well as physical property measurements. For the Fe1.11Te compound, the structure distortion from a tetragonal to monoclinic phase takes place at 64 K accompanied with the onset of antiferromagnetic order upon cooling. The magnetic structure of the monoclinic phase was confirmed to be of antiferromagnetic configuration with a propagation vector k = (1/2, 0, 1/2) based on Rietveld refinement of neutron powder diffraction data. The structural/magnetic transitions are also clearly visible in magnetic, electronic and thermodynamic measurements. For superconducting Fe1.11Te0.5Se0.5 compound, the superconducting transition with T c = 13.4 K is observed in the resistivity and ac susceptibility measurements. The upper critical field H c2 is obtained by measuring the resistivity under different magnetic fields. The Kim's critical state model is adopted to analyze the temperature dependence of the ac susceptibility and the intergranular critical current density is calculated as a function of both field amplitude and temperature. Neutron diffraction results show that Fe1.11Te0.5Se0.5 crystalizes in tetragonal structure at 300 K as in the parent compound Fe1.11Te and no structural distortion is detected upon cooling to 2 K. However an anisotropic thermal expansion anomaly is observed around 100 K.

Xiao, Y.; Su, Y.; Kumar, C.M.N.; Ritter, C.; Mittal, R.; Price, S.; Perßon, J.; Brückel, Th. (BARC); (Julich); (ILL)

2012-10-23T23:59:59.000Z

20

Development of a computer model for polycrystalline thin-film CuInSe sub 2 and CdTe solar cells  

DOE Green Energy (OSTI)

This report describes work to develop an accurate numerical model for CuInSe{sub 2} (CIS) and CdTe-based solar cells capable of running on a personal computer. Such a model will aid researchers in designing and analyzing CIS- and CdTe-based solar cells. ADEPT (A Device Emulation Pregrain and Tool) was used as the basis for this model. An additional objective of this research was to use the models developed to analyze the performance of existing and proposed CIS- and CdTe-based solar cells. The development of accurate numerical models for CIS- and CdTe-based solar cells required the compilation of cell performance data (for use in model verification) and the compilation of measurements of material parameters. The development of the numerical models involved implementing the various physical models appropriate to CIS and CdTe, as well as some common window. A version of the model capable of running on an IBM-comparable personal computer was developed (primary code development is on a SUN workstation). A user-friendly interface with pop-up menus is continuing to be developed for release with the IBM-compatible model.

Gray, J.L.; Schwartz, R.J.; Lee, Y.J. (Purdue Univ., Lafayette, IN (United States))

1992-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Surface and substrate induced effects on thin films of the topological insulators Bi2Se3 and Bi2Te3  

Science Conference Proceedings (OSTI)

Based on van der Waals density functional calculations, we have studied few-quintuple-layer (QL) films of Bi2Se3 and Bi2Te3. The separation between the QLs near the surface is found to have a large increase after relaxation, whereas, the separation between the inner QLs is smaller and approaches the bulk value as the thickness grows, showing a two-dimensional to three-dimensional structural crossover. Accordingly, the surface Dirac cone of the Bi2Se3 film is evidently gapped for small thicknesses (two to four QLs), and the gap is reduced and, finally, is closed with the increasing thickness, agreeing well with the experiments. We further studied the substrate effect by investigating the Bi2Se3/graphene system. It is found that the underlying graphene induces a giant thickness-dependent Rashba splitting and Dirac point shift. Because Bi2Te3 films have smaller relative inter-QL expansion and stronger spin-orbit coupling, the topological features start to appear in the film as thin as two QLs in good accord with the experiments.

Liu, Wenliang [Xiangtan University, Xiangtan Hunan, China; Peng, Xiangyang [Xiangtan University, Xiangtan Hunan, China; Wei, Xiaolin [Xiangtan University, Xiangtan Hunan, China; Yang, Hong [Xiangtan University, Xiangtan Hunan, China; Stocks, George Malcolm [ORNL; Zhong, Jianxin [Xiangtan University, Xiangtan Hunan, China

2013-01-01T23:59:59.000Z

22

Role of polycrystallinity in CdTe and CuInSe{sub 2} photovoltaic cells. Annual subcontract report, 1 April 1991--31 March 1992  

DOE Green Energy (OSTI)

The limiting role of polycrystallinity in thin-film solar calls has been reduced somewhat during the past year, and efficiencies of both CdTe and CuInSe{sub 2} cells are approaching 15%. Quantitative separation of loss mechanisms shows that individual losses, with the exception of forward recombination current, can be made comparable to their single crystal counterparts. One general manifestation of the extraneous trapping states in that the voltage of all polycrystalline thin-film cells drifts upward by 10--50 mV following the onset of illumination.

Sites, J.R. [Colorado State Univ., Fort Collins, CO (United States)

1992-11-01T23:59:59.000Z

23

Development of a computer model for polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells. Annual subcontract report, 1 January 1990--31 December 1990  

DOE Green Energy (OSTI)

This report describes work to develop a highly accurate numerical model for CuInSe{sub 2} and CdTe solar cells. ADEPT (A Device Emulation Program and Toolbox), a one-dimensional semiconductor device simulation code developed at Purdue University, was used as the basis of this model. An additional objective was to use ADEPT to analyze the performance of existing and proposed CuInSe{sub 2} and CdTe solar cell structures. The work is being performed in two phases. The first phase involved collecting device performance parameters, cell structure information, and material parameters. This information was used to construct the basic models to simulate CuInSe{sub 2} and CdTe solar cells. This report is a tabulation of information gathered during the first phase of this project on the performance of existing CuInSe{sub 2} and CdTe solar cells, the material properties of CuInSr{sub 2}, CdTe, and CdS, and the optical absorption properties of CuInSe{sub 2}, CdTe, and CdS. The second phase will entail further development and the release of a version of ADEPT tailored to CuInSe{sub 2} and CdTe solar cells that can be run on a personal computer. In addition, ADEPT will be used to analyze the performance of existing and proposed CuInSe{sub 2} and CdTe solar cell structures. 110 refs.

Gray, J.L.; Schwartz, R.J.; Lee, Y.J. [Purdue Univ., Lafayette, IN (United States)

1992-04-01T23:59:59.000Z

24

Anisotropy analysis of thermoelectric properties of Bi{sub 2}Te{sub 2.9}Se{sub 0.1} prepared by SPS method  

Science Conference Proceedings (OSTI)

The n-type Bi{sub 2}Te{sub 2.9}Se{sub 0.1} materials were synthesized by the direct fusion technique. The polycrystalline samples were fabricated by the uniaxial pressing of powders in spark plasma sintering (SPS) apparatus. The materials were subjected to the heat treatment in H{sub 2}-Ar atmosphere at 470 K for 24 h. The influence of preparation conditions on the anisotropy of electrical and thermal properties was thoroughly studied for the direction perpendicular and parallel to the pressing force. The microstructure and the chemical composition of both types of samples were examined using a scanning microscope (SEM) equipped with an X-ray energy dispersion detector (EDX). The XRD method was applied for the phase analysis of materials, as well as, for determination of preferred orientation of Bi{sub 2}Te{sub 2.9}Se{sub 0.1} grains. The Seebeck coefficient distribution was studied by the scanning thermoelectric microprobe (STM). Temperature dependences of thermoelectric properties (thermal and electrical conductivities, Seebeck coefficient) were measured in the temperature from 300 K to 550 K. The statistical analysis of results has shown strong influence of pressing force direction both on structural and transport properties. The applied heat treatment of materials significantly improves their thermoelectric figure of merit. Particularly, it was found that annealing in H2-Ar atmosphere leads to enhancement of the ZT three times up to {approx}0.7 at 370 K in perpendicular direction to the pressing force.

Zybala, Rafal; Wojciechowski, Krzysztof T. [Thermoelectric Research Laboratory, Department of Inorganic Chemistry, Faculty of Materials Science and Ceramics, AGH University of Science and Technology, Av. Mickiewicza 30, 30-059, Cracow (Poland)

2012-06-26T23:59:59.000Z

25

Development of a computer model for polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells. Final subcontract report, 1 January 1991--31 December 1991  

DOE Green Energy (OSTI)

This report describes work to develop an accurate numerical model for CuInSe{sub 2} (CIS) and CdTe-based solar cells capable of running on a personal computer. Such a model will aid researchers in designing and analyzing CIS- and CdTe-based solar cells. ADEPT (A Device Emulation Pregrain and Tool) was used as the basis for this model. An additional objective of this research was to use the models developed to analyze the performance of existing and proposed CIS- and CdTe-based solar cells. The development of accurate numerical models for CIS- and CdTe-based solar cells required the compilation of cell performance data (for use in model verification) and the compilation of measurements of material parameters. The development of the numerical models involved implementing the various physical models appropriate to CIS and CdTe, as well as some common window. A version of the model capable of running on an IBM-comparable personal computer was developed (primary code development is on a SUN workstation). A user-friendly interface with pop-up menus is continuing to be developed for release with the IBM-compatible model.

Gray, J.L.; Schwartz, R.J.; Lee, Y.J. [Purdue Univ., Lafayette, IN (United States)

1992-09-01T23:59:59.000Z

26

Structural and conductivity studies of CsK(SO{sub 4}){sub 0.32}(SeO{sub 4}){sub 0.68}Te(OH){sub 6}  

SciTech Connect

The compound CsK(SO{sub 4}){sub 0.32}(SeO{sub 4}){sub 0.68}Te(OH){sub 6} crystallizes in the monoclinic P2{sub 1}/n space group. It was analyzed, at room temperature, using X-ray diffractometer data. The main feature of these atomic arrangements is the coexistence of three and different anions (SO{sub 4}{sup 2-}, SeO{sub 4}{sup 2-} and TeO{sub 6}{sup 6-}groups) in the unit cell, connected by hydrogen bonds which make the building of the crystal. The thermal analysis of the title compound shows three distinct endothermal peaks at 435, 460 and 475 K. Complex impedance measurements are performed on this material as a function of both temperature and frequency. The electric conduction has been studied. The temperature dependence on the conductivity indicates that the sample became an ionic conductor at high temperature. - Graphical abstract: Projection of crystal structure CsK(SO{sub 4}){sub 0.32}(SeO{sub 4}){sub 0.68}Te(OH){sub 6} on the ab plane. Highlights: Black-Right-Pointing-Pointer We have studied the results of the crystal structure of the new mixed compound. Black-Right-Pointing-Pointer We have characterized the phase transition observed in DSC curve. Black-Right-Pointing-Pointer The protonic conduction in our material is probably due to a hopping mechanism.

Djemel, M., E-mail: jmal_manel@yahoo.fr [Laboratoire de Chimie Inorganique, Universite de Sfax, Faculte des Sciences de Sfax, BP 1171, 3000 Sfax (Tunisia); Abdelhedi, M., E-mail: m_abdelhedi2002@yahoo.fr [Laboratoire de Chimie Inorganique, Universite de Sfax, Faculte des Sciences de Sfax, BP 1171, 3000 Sfax (Tunisia); Laboratoire Leon Brouillon, CE/Saclay, 91191 Gif-Sur-Yvette Cedex (France); Zouari, N., E-mail: bizrirl@yahoo.fr [Laboratoire de l'Etat solide, Universite de Sfax, Faculte des Sciences de Sfax, BP 1171, 3000 Sfax (Tunisia); Dammak, M., E-mail: meddammak@yahoo.fr [Laboratoire de Chimie Inorganique, Universite de Sfax, Faculte des Sciences de Sfax, BP 1171, 3000 Sfax (Tunisia); Kolsi, A.W., E-mail: kolsi_abdelhwaheb@yahoo.fr [Laboratoire de Chimie Inorganique, Universite de Sfax, Faculte des Sciences de Sfax, BP 1171, 3000 Sfax (Tunisia)

2012-12-15T23:59:59.000Z

27

Advanced Processing of CdTe- and CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2}-Based Solar Cells; Phase I Report  

DOE Green Energy (OSTI)

The main tasks of the cadmium telluride portion of this project include the development of simplified processing for fabricating high-efficiency CdTe solar cells, studies on the long-term stability of CdTe devices, and the development of alternative transparent conducting oxides, window layers, and back contacts. The second portion of this project focused on CIGS solar cells. The main tasks include the development of a manufacturable process for CIGS devices and the development of high-band-gap alloys for use in tandem cell structures. Additional objectives include development of improved junction formation processing and contributing to the overall understanding of these materials and devices. Because the processing is manufacturing-driven, the authors use an all solid-state, simplified two-step process that relaxes the level of deposition control required.

Morel, D.L.; Ferekides, C.S.

2000-09-05T23:59:59.000Z

28

Development of a computer model for polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells; Annual subcontract report, 1 March 1992--28 February 1993  

DOE Green Energy (OSTI)

Solar cells operate by converting the radiation power from sun light into electrical power through photon absorption by semiconductor materials. The elemental and compound material systems widely used in photovoltaic applications can be produced in a variety of crystalline and non-crystalline forms. Although the crystalline group of materials have exhibited high conversion efficiencies, their production cost are substantially high. Several candidates in the poly- and micro-crystalline family of materials have recently gained much attention due to their potential for low cost manufacturability, stability, reliability and good performance. Among those materials, CuInSe{sub 2} and CdTe are considered to be the best choices for production of thin film solar cells because of the good optical properties and almost ideal band gap energies. Considerable progress was made with respect to cell performance and low cost manufacturing processes. Recently conversion efficiencies of 14.1 and 14.6% have been reported for CuInSe{sub 2} and CdTe based solar cells respectively. Even though the efficiencies of these cells continue to improve, they are not fully understood materials and there lies an uncertainty in their electrical properties and possible attainable performances. The best way to understand the details of current transport mechanisms and recombinations is to model the solar cells numerically. By numerical modeling, the processes which limit the cell performance can be sought and therefore, the most desirable designs for solar cells utilizing these materials as absorbers can be predicted. The problems with numerically modeling CuInSe{sub 2} and CdTe solar cells are that reported values of the pertinent material parameters vary over a wide range, and some quantities such as carrier concentration are not explicitly controlled.

Gray, J.L.; Schwartz, R.J.; Lee, Y.J. [Purdue Univ., West Lafayette, IN (United States)

1994-03-01T23:59:59.000Z

29

Advanced processing of CdTe- and CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2}-based solar cells. Phase 1 annual subcontract report, 18 April 1995--17 April 1996  

DOE Green Energy (OSTI)

The main objective of this project to develop high-efficiency CdTe solar cells based on processing conditions favorable for manufacturing processes. This report presents the results on work performed during the first phase of this project. One of the major issues addressed is the use of soda-lime glass substrates in place of the borosilicate glass often used for laboratory devices; another task is the preparation of Cu(In, Ga) Se{sub 2} solar cells by selenizing suitable precursor films. Emphasis is placed on processing and how different reaction schemes affect device performance. It was found that different reaction schemes not only change the bulk properties of Cu(In, Ga) Se{sub 2}, but also its surface properties, which critically affect device performance. Although the objective is to optimize processing to meet the manufacturing constraints, work has not been limited within these requirements.

Morel, D.L.; Ferekides, C.S. [Univ. of South Florida, Tampa, FL (United States)

1997-03-01T23:59:59.000Z

30

Effect of fluctuations on electron and phonon processes and thermodynamic parameters of Ag{sub 2}Te and Ag{sub 2}Se in the region of phase transition  

Science Conference Proceedings (OSTI)

Temperature dependences of electrical conductivity {sigma}, thermoelectric power {alpha}, results of differential thermal analysis {delta}T{sub y}, thermal conductivity {chi}, temperature conductivity {kappa}, and heat capacity C{sub p} were studied in Ag{sub 2}Te and Ag{sub 2}Se semiconductors in the region of the phase transition. Two extrema are observed in the temperature dependence {chi}(T): a maximum in the region of the {alpha}' {sup {yields}} {beta}' transition and a minimum in the region of the {beta}' {sup {yields}} {beta} transition; these extrema are caused by the similar dependence C{sub p}(T). It is shown that the {alpha} {sup {yields}} {alpha}' and {beta}' {sup {yields}} {beta} transitions are displacement transitions, while the {alpha}' {sup {yields}} {beta}' transition is of reconstruction type. It is established that the disorder parameter {eta} in silver chalcogenides is highly smeared in the region of the phase transition; therefore, disordering of phases at the point of the phase transition is incomplete: 73, 62, and 48% in Ag{sub 2}Te, Ag{sub 2}Se, and Ag{sub 2}S, respectively. The minimum volumes V{sub ph} for new phases are calculated; it is shown that the value of V{sub ph} in displacement transitions is larger than in the reconstruction-type transitions.

Aliev, S. A.; Aliev, F. F. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)], E-mail: farzali@physics.ab.az

2008-04-15T23:59:59.000Z

31

S Se  

NLE Websites -- All DOE Office Websites (Extended Search)

Se Se er rp pe en nt ti in ne e S St ty yl le e C Co oi il l W Wi in nd di in ng gs s f fo or r B BE EP PC C- -I II I I IR R M Ma ag gn ne et t P Pr ro od du uc ct ti io on n V Viid de eo oc co on nffe er re en nc ce e B Be ettw we ee en n IIH HE EP P a an nd d B BN NL L S Sc ch he ed du ulle ed d ffo or r M Ma ar rc ch h 3 3,, 2 20 00 04 4 o on n B BE EP PC C- -IIII S SC C M Ma ag gn ne ett P Pr ro od du uc cttiio on n.. Presented by Brett Parker/BNL - SMD First SCQ Production Coil Winding 7 0 0 Z (mm) 300 200 100 θ (deg.) 5 0 0 Z (mm) θ (deg.) O Or ri ig gi in na al l D Do ou ub bl le e- -L La ay ye er r B BE EP PC C- -I II I C Co oi il l W Wi in nd di in ng g P Pa at tt te er rn ns s f fo or r S SC CB B a an nd d S SC CQ Q. . The plan had been to wind one coil pole and then stop winding to fill in gaps with G10 before adding new substrate and then continue winding the same pole in the second layer. This was maybe not so bad for SCB where we would have had to stop/start twice but for the four double-layer SCQ we would have had sixteen stop/starts

32

Spectroscopy, photo-physics, and time resolved exciton dynamics of GaSe quantum dots  

E-Print Network (OSTI)

of Carrier Relaxation Dynamics in Type II CdSe/CdTe TetrapodHigh Quality Zinc Blende CdSe Nanocrystals”, J. Phys. Chem.Shape Tuning of Type II CdTe-CdSe Colloidal Nanocrystal

Mirafzal, Hoda

2011-01-01T23:59:59.000Z

33

Advanced Processing of CdTe- and CuIn1-xGaxSe2-Based Solar Cells: Final Technical Report, 26 May 1998--22 December 2001  

DOE Green Energy (OSTI)

This project addresses most of the key CdTe technology areas, with focus on improving the manufacturability and long-term stability of this technology. The activities over this 3-year period include developing simplified processing, studying novel front and back contacts, and improving long-term stability. This report describes work carried out during the last year of the project. The solar cells discussed below are fabricated by various deposition technologies that include chemical vapor deposition, chemical-bath deposition, close-spaced sublimation, and rf-sputtering. The devices are routinely evaluated using standard solar cell analytical techniques such as dark and light current-voltage, spectral response, and capacitance-voltage measurements.

Morel, D. L.; Ferekides, C. S.

2003-10-01T23:59:59.000Z

34

TE HNOLOGY SUMMARY  

nano oral™ high surfa e area platinum atalysts to improve fuel ell effi ien y te hnology summary te hnology readiness level: 4 key elements have een demonstrated ...

35

Appendix B: CArBon dioxide CApture teChnology SheetS  

NLE Websites -- All DOE Office Websites (Extended Search)

DioxiDe CaPture teChnology sheets national energy teChnology laboratory aDvanCeD aCiD gas seParation teChnology for the utilization of low-rank Coals primary project goals Air...

36

Midea: Order (2010-SE-0110, 2012-SE-1402, 2012-SE-1404, 2013-SE-1401) |  

NLE Websites -- All DOE Office Websites (Extended Search)

Midea: Order (2010-SE-0110, 2012-SE-1402, 2012-SE-1404, Midea: Order (2010-SE-0110, 2012-SE-1402, 2012-SE-1404, 2013-SE-1401) Midea: Order (2010-SE-0110, 2012-SE-1402, 2012-SE-1404, 2013-SE-1401) November 26, 2012 DOE ordered Midea America Corp., Hefei Hualing Co., Ltd., and China Refrigeration Industry Co., Ltd., to pay a $4,579,949 ($4,562,838 plus one percent interest) civil penalty after finding Midea had manufactured and distributed in commerce in the U.S. a large quantity of basic models HD-l46F, HS-390C, UL-WD145-D, and UL-WD195-D of noncompliant refrigerator-freezers and freezers. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Midea. Midea: Order (2010-SE-0110, 2012-SE-1402, 2012-SE-1404, 2013-SE-1401) More Documents & Publications Midea: Proposed Penalty (2010-SE-0110, 2012-SE-1402, 2012-SE-1404)

37

TE HNOLOGY SUMMARY  

owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy’s National Nuclear Security Administration. SAND # 2011-7007P TE HNOLOGY INQUIRY?

38

ZB/WZ Band Offsets and Carrier Localization in CdTe Solar Cells  

DOE Green Energy (OSTI)

Using the first principles band-structure method, we studied systematically the stability and electronic structure of CdX (X=S, Se, and Te) semiconductors with the zinc-blende (ZB) and wurtzite (WZ) crystal structures.

Wei, S.-H.; Zhang, S. B.

2000-01-01T23:59:59.000Z

39

Vibrational signatures of OTe and OTe-VCd in CdTe: A first principles study  

Science Conference Proceedings (OSTI)

Chen et al. [Phys. Rev. Lett. 96 (2006) 035508] experimentally observed vibrational signatures related to defects in oxygen-doped CdTe using ultrahigh resolution Fourier transform infrared (FTIR) spectroscopy. They observed an absorption peak at 350 cm{sup -1}. In addition, for samples grown under certain conditions, they observed two higher frequency peaks (1097 and 1108 cm{sup -1}) at low temperature that merged into one at room-temperature. They attributed the low-frequency peak (350 cm{sup -1}) to the vibration of O{sub Te} and the two higher frequency peaks to the vibrational modes of a O{sub Te}-V{sub Cd} complex. Subsequently, they reported similar modes around 1100 cm{sup -1} in O-doped CdSe [Phys. Rev. Lett. 101 (2008) 195502] which were attributed to an O{sub Se}-V{sub Cd} complex. We employed first-principles DFT calculations to calculate the vibrational modes of O{sub Te} and O{sub Te}-V{sub Cd} complex in CdTe. Our calculations show that the 350 cm{sup -1} mode is consistent with O{sub Te}. However, the frequencies of the modes around 1100 cm{sup -1} are more than twice the expected frequencies for O{sub Te}-V{sub Cd} complexes in CdTe (or O{sub Se}-V{sub Cd} in CdSe), indicating that the O{sub Te}-V{sub Cd} complex cannot be the cause of the observed 1100 cm{sup -1} modes. A search for a new defect model is in order.

Thienprasert, J.T. [Kasetsart University, Thailand; Limpijumnong, Sukit [Kasetsart University, Thailand; Janotti, Anderson [University of California, Santa Barbara; Van de Walle, C.G. [University of California, Santa Barbara; Zhang, Lijun [ORNL; Du, Mao-Hua [ORNL; Singh, David J [ORNL

2010-01-01T23:59:59.000Z

40

Development of ZnTe:Cu Contacts for CdTe Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-08-320  

DOE Green Energy (OSTI)

The main focus of the work at NREL was on the development of Cu-doped ZnTe contacts to CdTe solar cells in the substrate configuration. The work performed under the CRADA utilized the substrate device structure used at NREL previously. All fabrication was performed at NREL. We worked on the development of Cu-doped ZnTe as well as variety of other contacts such as Sb-doped ZnTe, CuxTe, and MoSe2. We were able to optimize the contacts to improve device parameters. The improvement was obtained primarily through increasing the open-circuit voltage, to values as high as 760 mV, leading to device efficiencies of 7%.

Dhere, R.

2012-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Cs-Se (Cesium - Selenium)  

Science Conference Proceedings (OSTI)

Cs-Se crystallographic data...Cs-Se crystallographic data Phase Composition, wt% Se Pearson symbol Space group (Cs) 0 cI 2 Im m Cs 2 Se 22.9 oP 12 Pnma Cs 3 Se 2 28 â?¦ â?¦ Cs 5 Se 4 32.2 â?¦ â?¦ CsSe 37.3 â?¦ â?¦ Cs 2 Se 3 47 oC 20 Cmc 2 1 Cs 2 Se 5 59.7 oP 28 P 2 1 2 1 2 1 (Se) 100 hP 3 P 3 1 2 1 High-pressure phase Cs 2 Se 22.9 oF 24 Fdd 2...

42

Midea: Proposed Penalty (2010-SE-0110, 2012-SE-1402, 2012-SE-1404) |  

NLE Websites -- All DOE Office Websites (Extended Search)

Proposed Penalty (2010-SE-0110, 2012-SE-1402, 2012-SE-1404) Proposed Penalty (2010-SE-0110, 2012-SE-1402, 2012-SE-1404) Midea: Proposed Penalty (2010-SE-0110, 2012-SE-1402, 2012-SE-1404) November 20, 2012 DOE alleged in a Notice of Proposed Civil Penalty that Midea America Corp., Hefei Hualing Co., Ltd., and China Refrigeration Industry Co., Ltd. manufactured and distributed noncompliant refrigerator-freezers and freezers in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Midea: Proposed Penalty (2010-SE-0110, 2012-SE-1402, 2012-SE-1404)

43

arXiv.org help - Why Submit the TeX/LaTeX Source?  

NLE Websites -- All DOE Office Websites (Extended Search)

abshep-th9511053). TeX source is more compact and space-efficient. Frequent Red Herring Concerns: Will the auto-TeXing embed figures? Yes. Our TeX installation can do...

44

LgCOOleS, Se*&,,  

Office of Legacy Management (LM)

; "Ofice Mem ; "Ofice Mem . m *" ' ' *IilCl:t Consists of & " ' / Of LgCOOleS, Se*&,, es * UNITED STATES G-OVERNM NT <;$)~~ 3i;t-j /Lj ' , ~~~' jCjC;O c) TO I LT. :s. Clnr!te, ,;or,~~~,~' , -.,,..:-:-Y"' r~-;i~.L.-Z.:r DATE: uL"C!.,?r 6, 1' ?L9 A meting mj: !1:1d in i:1CG bet,. _ ^ .- ',cel representatives 51 ;.2rshz:i sr.3 the A;.35 to nwotiztc .the prices for producing FY-1: (brow oxise), _1 I%-; (green salt and .?T-12 (he::.-iZluoriic) fcr the sc2or.d 3,uarter of fisc21 1950, (Cctober, Z:ove-r.ber, 2c?Ce.:lxr l?L?). Th-: foll;:~:i;.E xttcndcd the mztin:: "-Tsh-:, -.,q ..__ _id.l - 1;. 2. 9till;Iell

45

Midea: Amended Noncompliance Determination (2010-SE-0110, 2012-SE-1402) |  

NLE Websites -- All DOE Office Websites (Extended Search)

Amended Noncompliance Determination (2010-SE-0110, Amended Noncompliance Determination (2010-SE-0110, 2012-SE-1402) Midea: Amended Noncompliance Determination (2010-SE-0110, 2012-SE-1402) November 26, 2012 DOE issued an Amended Notice of Noncompliance Determination to Midea America Corp., Hefei Hualing Co., Ltd., and China Refrigeration Industry Co., Ltd. finding that basic model HD-146F, a refrigerator-freezer, and basic model HS-390C, a freezer, do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. Midea must immediately notify each person (or company) to whom Midea distributed the noncompliant products that the product does not meet Federal standards. In addition, Midea must provide to DOE documents and records showing the number of units Midea distributed

46

Solon SE | Open Energy Information  

Open Energy Info (EERE)

Berlin, Germany Zip D-12489 Sector Solar Product Manufacturer of PV modules and tracking systems, and integrator of solar systems. References Solon SE1 LinkedIn Connections...

47

Formation of core/shell-like ZnSe1?xTex nanocrystals due to equilibrium surface segregation  

Science Conference Proceedings (OSTI)

We report results of equilibrium surface segregation in ZnSe{sub 1?x}Te{sub x} nanocrystals based on a computational analysis of coupled compositional, structural, and volume relaxation of the nanocrystals that employs Monte Carlo and conjugate-gradient methods according to a first-principles-parameterized description of interatomic interactions. We have determined the equilibrium concentration distribution as a function of nanocrystal size and composition for nanocrystal morphologies that include faceted equilibrium crystal shapes. The results identify the nanoparticle size and composition ranges that allow for self-assembly of core/shell-like nanocrystal structures characterized by a Te-deficient core and a Te-rich shell.

Pandey, Sumeet C.; Mountziaris, T. J.; Venkataraman, Dhandapani; Maroudas, Dimitris

2010-01-01T23:59:59.000Z

48

TE Connectivity Finds Answers in Tomography  

NLE Websites -- All DOE Office Websites (Extended Search)

TE Connectivity Finds Answers in TE Connectivity Finds Answers in Tomography TE Connectivity Finds Answers in Tomography Print Thursday, 22 August 2013 10:50 TE Connectivity is a world leader in connectivity-the $13 billion global company designs and manufactures more than 500,000 different electronic connectivity products for the automotive, energy, industrial, broadband communications, consumer device, healthcare, aerospace, and defense industries. TE Connectivity has a long-standing commitment to innovation and engineering excellence. Their products help address challenges arising from companies' need for energy efficiency, always-on communications, and ever-increasing productivity. Recently, a team led by TE's senior manager of materials development, Dr. Jerzy Gazda (at left), has been investigating how ALS tomography capabilities can help the company develop more efficient connectors.

49

Recycling of CdTe photovoltaic waste  

DOE Patents (OSTI)

A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate and electrolyzing the leachate to separate Cd from Te, wherein the Te is deposits onto a cathode while the Cd remains in solution.

Goozner, Robert E. (Charlotte, NC); Long, Mark O. (Charlotte, NC); Drinkard, Jr., William F. (Charlotte, NC)

1999-01-01T23:59:59.000Z

50

Response of Cds/CdTe Devices to Te Exposure of Back Contact: Preprint  

DOE Green Energy (OSTI)

Theoretical predictions of thin-film CdS/CdTe photovoltaic (PV) devices have suggested performance may be improved by reducing recombination due to Te-vacancy (VTe) or Te-interstitial (Tei) defects. Although formation of these intrinsic defects is likely influenced by CdTe deposition parameters, it also may be coupled to formation of beneficial cadmium vacancy (VCd) defects. If this is true, reducing potential effects of VTe or Tei may be difficult without also reducing the density of VCd. In contrast, post-deposition processes can sometimes afford a greater degree of defect control. Here we explore a post-deposition process that appears to influence the Te-related defects in polycrystalline CdTe. Specifically, we have exposed the CdTe surface to Te prior to ZnTe:Cu/Ti contact-interface formation with the goal of reducing VTe but without significantly reducing VCd. Initial results show that when this modified contact is used on a CdCl2-treated CdS/CdTe device, significantly poorer device performance results. This suggests two things: First, the amount of free-Te available during contact formation (either from chemical etching or CuTe or ZnTe deposition) may be a more important parameter to device performance than previously appreciated. Second, if processes have been used to reduce the effect of VTe (e.g., oxygen and chlorine additions to the CdTe), adding even a small amount of Te may produce detrimental defects.

Gessert, T. A.; Burst, J. M.; Ma, J.; Wei, S. H.; Kuciauskas, D.; Barnes, T. M.; Duenow, J. N.; Young, M. R.; Rance, W. L.; Li, J. V.; Dippo, P.

2012-06-01T23:59:59.000Z

51

Particulate Contacts to Si and CdTe: Al, Ag, Hg-Cu-Te, and Sb-Te  

DOE Green Energy (OSTI)

Our team has been investigating the use of particle-based contacts in both Si and CdTe solar cell technologies. First, in the area of contacts to Si, powders of Al and Ag prepared by an electroexplosion process have been characterized by transmission electron microscopy (TEM), TEM elemental determination X-ray spectroscopy (TEM-EDS), and TEM electron diffraction (TEM-ED). These Al and Ag particles were slurried and tested as contacts to p- and n-type silicon wafers, respectively. Linear current-voltage (I-V) was observed for Ag on n-type Si, indicative of an ohmic contact, whereas the Al on p-type Si sample was non-ideal. A wet-chemical surface treatment was performed on one Al sample and TEM-EDS indicated a substantial decrease in the O contaminant level. The treated Al on p-type Si films exhibited linear I-V after annealing. Second, in the area of contacts to CdTe, particles of Hg-Cu-Te and Sb-Te have been applied as contacts to CdTe/CdS/SnO2 heterostructures prepared by the standard NREL protocol. First, Hg-Cu-Te and Sb-Te were prepared by a metathesis reaction. After CdCl2 treatment and NP etch of the CdTe layer, particle contacts were applied. The Hg-Cu-Te contacted cells exhibited good electrical characteristics, with Voc > 810 mV and efficiencies > 11.5 % for most cells. Although Voc > 800 mV were observed for the Sb-Te contacted cells, efficiencies in these devices were limited to 9.1%, presumably by a large series resistance (>20 {Omega}) observed in all samples.

Schulz, D. L.; Ribelin, D.; Curtis, C. J.; Ginley, D. S.

1998-10-22T23:59:59.000Z

52

Synthesis of Nanowires-enhanced Bulk TE Nanocomposite for High ...  

Science Conference Proceedings (OSTI)

Abstract Scope, There are great interest in developing high-efficiency thermoelectrical (TE) materials for power generation. Significant improvements in a few TE ...

53

CdSxTe1-x Alloying in CdS/CdTe Solar Cells  

DOE Green Energy (OSTI)

A CdSxTe1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdSxTe1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdSxTe1-x region. Further understanding, however, is essential to predict the role of this CdSxTe1-x layer in the operation of CdS/CdTe devices. In this study, CdSxTe1-x alloy films were deposited by RF magnetron sputtering and co-evaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and co-evaporated CdSxTe1-x films of lower S content (x<0.3) have a cubic zincblende (ZB) structure akin to CdTe, while those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl2 heat treatment at ~400 degrees C for 5 min. Films sputtered in a 1% O2/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl2 heat treatment (HT). Films sputtered in O2 partial pressure have a much wider bandgap (BG) than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films.

Duenow, J. N.; Dhere, R. G.; Moutinho, H. R.; To, B.; Pankow, J. W.; Kuciauskas, D.; Gessert, T. A.

2011-05-01T23:59:59.000Z

54

Double-{beta}-decay Q values of {sup 130}Te, {sup 128}Te, and {sup 120}Te  

SciTech Connect

The double-{beta}-decay Q values of {sup 130}Te, {sup 128}Te, and {sup 120}Te have been determined from parent-daughter mass differences measured with the Canadian Penning Trap mass spectrometer. The {sup 132}Xe-{sup 129}Xe mass difference, which is precisely known, was also determined to confirm the accuracy of these results. The {sup 130}Te Q value was found to be 2527.01{+-}0.32 keV, which is 3.3 keV lower than the 2003 Atomic Mass Evaluation recommended value and is consistent with another recent Penning trap measurement. The {sup 128}Te and {sup 120}Te Q values were found to be 865.87{+-}1.31 and 1714.81{+-}1.25 keV, respectively. For {sup 120}Te, this reduction in uncertainty of nearly a factor of 8 opens up the possibility of using this isotope for sensitive searches for neutrinoless double-electron capture and electron capture with {beta}{sup +}emission.

Scielzo, N. D. [Physical Sciences Directorate, Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Caldwell, S.; Savard, G.; Sternberg, M.; Van Schelt, J. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Department of Physics, University of Chicago, Chicago, Illinois 60637 (United States); Clark, J. A.; Levand, A. F.; Sun, T. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Deibel, C. M. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Joint Institute of Nuclear Astrophysics, Michigan State University, East Lansing, Michigan 48824 (United States); Fallis, J. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada); Gulick, S. [Department of Physics, McGill University, Montreal, Quebec H3A 2T8 (Canada); Lascar, D. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208 (United States); Li, G. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Department of Physics, McGill University, Montreal, Quebec H3A 2T8 (Canada); Mintz, J. [Department of Nuclear Engineering, University of California, Berkeley, California 94720 (United States); Norman, E. B. [Physical Sciences Directorate, Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Department of Nuclear Engineering, University of California, Berkeley, California 94720 (United States); Sharma, K. S. [Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada)

2009-08-15T23:59:59.000Z

55

Anisotropy in CdSe quantum rods  

E-Print Network (OSTI)

in synthesizing monodisperse CdSe nanorods has allowed us toout the phase diagram of the CdSe nanorod solution in order2. Controlled Synthesis of CdSe Nanorods 2.1 Introduction In

Li, Liang-shi

2003-01-01T23:59:59.000Z

56

Recycling of CdTe photovoltaic waste  

DOE Patents (OSTI)

A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base.

Goozner, Robert E. (Charlotte, NC); Long, Mark O. (Charlotte, NC); Drinkard, Jr., William F. (Charlotte, NC)

1999-04-27T23:59:59.000Z

57

Recycling of CdTe photovoltaic waste  

DOE Patents (OSTI)

A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base. 3 figs.

Goozner, R.E.; Long, M.O.; Drinkard, W.F. Jr.

1999-04-27T23:59:59.000Z

58

Thermodynamic and Transport Properties of YTe3, LaTe3 and CeTe3  

SciTech Connect

Measurements of heat capacity, susceptibility, and electrical resistivity are presented for single crystals of the charge density wave compounds YTe{sub 3}, LaTe{sub 3}, and CeTe{sub 3}. The materials are metallic to low temperatures, but have a small density of states due to the charge density wave gapping large portions of the Fermi surface. CeTe{sub 3} is found to be a weak Kondo lattice, with an antiferromagnetic ground state and T{sub N} = 2.8 K. The electrical resistivity of all three compounds is highly anisotropic, confirming the weak dispersion perpendicular to Te planes predicted by band structure calculations.

Ru, N.

2011-08-19T23:59:59.000Z

59

IMPROVEMENT OF CdMnTe DETECTOR PERFORMANCE BY MnTe PURIFICATION  

Science Conference Proceedings (OSTI)

Residual impurities in manganese (Mn) are a big obstacle to obtaining high-performance CdMnTe (CMT) X-ray and gamma-ray detectors. Generally, the zone-refining method is an effective way to improve the material's purity. In this work, we purified the MnTe compounds combining the zone-refining method with molten Te, which has a very high solubility for most impurities. We confirmed the improved purity of the material by glow-discharge mass spectrometry (GDMS). We also found that CMT crystals from a multiply-refined MnTe source, grown by the vertical Bridgman method, yielded better performing detectors.

Kim, K.H.; Bolotnikov, A.E.; Camarda, G.S.; Tappero, R.; Hossain, A.; Cui, Y.; Yang, G.; Gul, R.; and James, R.B.

2011-04-25T23:59:59.000Z

60

AOCS Official Method Te 3a-64  

Science Conference Proceedings (OSTI)

Acid Value and Free Amine Value of Fatty Quaternary Ammonium Chlorides AOCS Official Method Te 3a-64 Methods Downloads Methods Downloads DEFINITION The acid value is the mg of potassium hydroxide necessary to neut

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Substrate CdTe Efficiency Improvements  

Thin film solar cells have been the focus of many research facilities in recent years that are working to decrease manufacturing costs and increase cell efficiency. Cadmium telluride (CdTe) has been well recognized as a promising photovoltaic material ...

62

AOCS Official Method Te 4a-70  

Science Conference Proceedings (OSTI)

Acid Value AOCS Official Method Te 4a-70 Methods Downloads Methods Downloads DEFINITION The acid value is the mg of potassium hydroxide necessary to neutralize the free acids in 1 g of test sample.

63

Perspective on TeV-scale physics  

Science Conference Proceedings (OSTI)

These lectures review theoretical motivations and experimental prospects for the study of TeV-scale physics. Three clues to the importance of TeV physics are discussed: implications of quantum corrections for the masses of a fourth generation quark-lepton family, the gauge hierarchy problem and known solutions, and implications of symmetry and unitarity for the symmetry-breaking sector of the electroweak gauge theory. The experimental prospects are reviewed with emphasis on the multi-TeV pp colliders that may be built in the 1990's. The topics include new phenomena that might occur - e.g., a fourth generation, heavy gauge bosons, composite structure, and supersymmetry - as well as the signals of the unknown SU(2)/sub L/ /times/ U(1)/sub Y/ breaking mechanism that must occur within the TeV domain. 96 refs., 21 figs.

Chanowitz, M.S.

1989-02-01T23:59:59.000Z

64

LaTeX Paper - TMS  

Science Conference Proceedings (OSTI)

LaTeX PAPER TMS1, Jane Doe2, John Doe2 1TMS (The Minerals Metals & Materials Society)184 Thorn Hill Rd.; Warrendale, PA 15086-7514, USA 2Name of ...

65

AOCS Official Method Te 1a-64  

Science Conference Proceedings (OSTI)

Acid Value AOCS Official Method Te 1a-64 Methods Downloads Methods Downloads DEFINITION The acid value is the mg of potassium hydroxide necessary to neutralize fatty acids in 1 g of test sample. SCO

66

AOCS Official Method Te 2a-64  

Science Conference Proceedings (OSTI)

Color, Photometric Index AOCS Official Method Te 2a-64 Methods Downloads Methods Downloads DEFINITION This method measures the color of commercial fatty acids and expresses the color as percent transmission at 440

67

GaTe semiconductor for radiation detection  

SciTech Connect

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

68

THERMODYNAMIC PROPERTIES OF SeS  

E-Print Network (OSTI)

Korenev, et al. used the CdS-CdSe and ZnS-ZnSe systemsto measure. For the CdS-CdSe system, Korenev, et al. wereVapor pressures for CdS and CdSe are better established. A

Huang, M.-D.

2011-01-01T23:59:59.000Z

69

The TE Wave Transmission Method for Electron Cloud Measurements at Cesr-TA  

E-Print Network (OSTI)

CBP-836 THE TE WAVE TRANSMISSION METHOD FOR ELECTRON CLOUDobtained using the TE transmission technique described inBesides the TE transmission method in its initial

Desantis, S.

2010-01-01T23:59:59.000Z

70

Impurity Gettering Effect of Te Inclusions in Cdznte Single Crystals  

Science Conference Proceedings (OSTI)

The local impurity distribution in Te inclusions of CdZnTe (CZT) crystal was investigated by the time-of-flight secondary ion mass spectrometry (Tof-SIMS) technique. Direct evidence of impurity gettering in Te inclusions has been observed for the first time. The impurity gettering in Te inclusions originated from the diffusion mechanism during crystal growth and segregation mechanism during crystal cooling. This phenomenon is meaningful, because it reveals how Te inclusions affect CZT properties and provides a possible approach to reduce the impurities in CZT by the way of removing Te inclusions.

Yang, G.; Bolotnikov, A; Cui, Y; Camarda, G; Hossain, A; James, R

2009-01-01T23:59:59.000Z

71

INTEGRAL observations of TeV plerions  

E-Print Network (OSTI)

Amongst the sources seen in very high gamma-rays several are associated with Pulsar Wind Nebulae (``TeV plerions''). The study of hard X-ray/soft gamma-ray emission is providing an important insight into the energetic particle population present in these objects. The unpulsed emission from pulsar/pulsar wind nebula systems in the energy range accessible to the INTEGRAL satellite is mainly synchrotron emission from energetic and fast cooling electrons close to their acceleration site. Our analyses of public INTEGRAL data of known TeV plerions detected by ground based Cherenkov telescopes indicate a deeper link between these TeV plerions and INTEGRAL detected pulsar wind nebulae. The newly discovered TeV plerion in the northern wing of the Kookaburra region (G313.3+0.6 powered by the middle aged PSR J1420-6048) is found to have a previously unknown INTEGRAL counterpart which is besides the Vela pulsar the only middle aged pulsar detected with INTEGRAL. We do not find an INTEGRAL counterpart of the TeV plerion associated with the X-ray PWN ``Rabbit'' G313.3+0.1 which is possibly powered by a young pulsar.

A. I. D. Hoffmann; D. Horns; A. Santangelo

2006-09-14T23:59:59.000Z

72

THERMODYNAMIC PROPERTIES OF SeS  

E-Print Network (OSTI)

rights . ;, a 9 U (t,) -iii- THERMODYNAMIC PROPERTIES OF SeSSeS gas. only estimated thermodynamic data are Since groupinterest to study the thermodynamic properties of SeS in

Huang, M.-D.

2011-01-01T23:59:59.000Z

73

Engineered Products: Noncompliance Determination (2012-SE-5401) |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Noncompliance Determination (2012-SE-5401) Noncompliance Determination (2012-SE-5401) Engineered Products: Noncompliance Determination (2012-SE-5401) July 26, 2012 DOE issued a Notice of Noncompliance Determination to Engineered Products Company (EPCO) finding that basic model 15701 of metal halide lamp fixture does not comport with the energy conservation standards. DOE determined the product was noncompliant based on the company's own testing. EPCO must immediately notify each person (or company) to whom EPCO distributed the noncompliant product that the product does not meet Federal standards. Engineered Products: Noncompliance Determination (2012-SE-5401) More Documents & Publications Engineered Products: Proposed Penalty (2012-SE-5401) Engineered Products: Order (2012-SE-5401) Teddico: Noncompliance Determination (2012-SE-5409

74

ALTERNATING URRENT PHOTOVOLTAI UILDING LO K TE HNOLOGY ...  

Solar Energy Generation Energy Storage Power Sources Satellites TE HNOLOGI AL ENEFITS module technologies Eliminates D voltage concerns

75

Search for ? + / EC double beta decay of 120 Te  

Science Conference Proceedings (OSTI)

We present a search for ? + / EC double beta decay of 120 Te performed with the CUORICINO experiment

C. Tomei; The CUORICINO Collaboration

2011-01-01T23:59:59.000Z

76

Novel Method for Growing Te-Inclusion-Free CZT  

Science Conference Proceedings (OSTI)

The authors propose a new method for growth of detector-grade CdZnTe (CZT) with reduced concentration and sizes of Te inclusions. The method is designed to impede the formation of Te-rich inclusions in crystals due to the use of new CZT growth method and a unique ampoule design.

Bolotnikov,A.

2008-06-17T23:59:59.000Z

77

ZnO-ZnTe Nanocone Heterojunctions  

Science Conference Proceedings (OSTI)

Semiconductor nanostructure heterojunctions are expected to be efficient structures for next-generation photovoltaic solar cells, radiation detectors, and light-emitting diodes. In this letter we report heterojunctions made of vertically aligned ZnO/ZnTe nanocones synthesized using a combination of thermal vapor deposition and pulsed-laser deposition (PLD). The ZnO nanocones and nanorods were synthesized as cores by utilizing the growth rate difference between central and boundary sites of precursor domains during thermal vapor deposition. The p-n heterojunctions were subsequently formed by growing ZnTe as shells on the nanocone surface using PLD. The ZnTe shells were polycrystalline structures, while ZnO cores were wurzite structures. The p-n junction of the nanocone core-shell structure exhibited I-V characteristics consistent with a p-n diode, but the nanorod junction did not. These structural and electric characteristics indicate that the ZnO nanocones are more feasible than ZnO nanorods as heterojunctions because the sloping facets of the nanocones facilitate deposition of ZnTe by PLD without the deleterious effects of shadowing. Furthermore, based on theoretical modeling of nanostructure heterojunctions, the nanocone-based junction exhibits an electrostatic potential profile that is much more effective for carrier transport than the electrostatic potential for the nanorod-based junction.

Lee, Sang Hyun [ORNL; Smith, Barton [ORNL; Zhang, Xiaoguang [ORNL; Seo, Sung Seok A [ORNL; Bell, Zane W [ORNL; Xu, Jun [ORNL

2010-01-01T23:59:59.000Z

78

Mechanism of terahertz photoconductivity in semimetallic HgTe/CdHgTe quantum wells  

Science Conference Proceedings (OSTI)

Terahertz photoconductivity in magnetic fields in semimetallic HgTe/CdHgTe quantum wells has been studied. The main contribution to photoconductivity comes from a signal that appears as a result of electron-gas heating. It is shown that, with the cyclotron resonance conditions satisfied, the photoconductivity signal is composed of cyclotron-resonance and bolometric components. However, in this case too, the bolometric contribution predominates.

Vasilyev, Yu. B., E-mail: yu.vasilyev@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Mikhailov, N. N. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Gouider, F. [Institut fuer Angewandte Physik (Germany); Vasilyeva, G. Yu. [St. Petersburg State Polytechnic University (Russian Federation); Nachtwei, G. [Institut fuer Angewandte Physik (Germany)

2012-05-15T23:59:59.000Z

79

THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te-CdTe HETEROJUNCTIONS (1)  

E-Print Network (OSTI)

195 THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te This paper is a short status report on the continuing development of Cu22014xTe-CdTe thin film solar cells thin film work. The most pressing current need is to determine how to extend cell life, particularly

Paris-Sud XI, Université de

80

Estimation of selenium (Se) intake from Se in serum, whole blood, toenails, or urine  

SciTech Connect

Because Se content of food varies widely, estimates of intake based on Se status are more accurate than those based on food composition tables. 77 free-living subjects from South Dakota and Wyoming, where the range of Se intake was large, provided blood, toenails, and 24-hour urines. Se intake, measured by chemical analysis of 4-8 days of duplicate-plate food composites from each subject, was estimated on the basis of the Se indices. To predict the natural logarithm of Se intake from serum Se the best fit was provided by : {minus}0.465 + 0.568{asterisk}SSe. Addition of lean body mass (LBM (kg)) and energy intake (EI (MJ)) to the model markedly improved the fit. Models based on Se in blood or urine gave slightly better estimates than those based on toenail Se. Consideration of data in addition to indices of Se status resulted in improved estimates of intake.

Longnecker, M.P.; Taylor, P.R.; Levander, O.A.; Flack, V.; Veillon, C.; McAdam, P.A.; Patterson, K.Y.; Holden, J.; Stampfer, M.J.; Morris, J.S.; Willett, W.C. (Univ. of California, Los Angeles (United States) NCI, Rockville, MD (United States) USDA, Beltsville, MD (United States) Harvard Univ., Boston, MA (United States) Univ. of Missouri, Columbia (United States))

1991-03-11T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Preferential orientation of Te precipitates in melt-grown CZT  

Science Conference Proceedings (OSTI)

Cadmium zinc telluride (Cd1-xZnxTe or CZT) has proved to be a useful material for semiconductor gamma-ray spectrometers and other electro-optic devices. It is often grown Te-rich to optimize its electrical characteristics, but this off-stoichiometric growth leads to the formation of semimetallic Te precipitates in the semiconducting host crystal. These precipitates can impair device performance and their formation needs to be inhibited, if possible, during growth. Characterization of melt-grown CZT has shown that Te precipitates are often faceted. In this study, characterization of several particles of different shapes revealed that most of the Te precipitates were preferentially oriented with the {101}CZT||{-12-10}Te . A secondary orientation relationship was also observed as {11-1}CZT||{01-11}Te for one of the {111}CZT family of planes. One of the particles exhibited {110}CZT||{01-10}Te and {001}CZT||{0001}Te . Precipitates were often found on {111}CZT twin boundaries and, in these cases, it was possible to assign specific orientations with respect to the twin plane. The expected orientation of the {0001}-plane of Te aligned with the {111}-plane of CZT was not observed even though a good lattice match is predicted in ab initio models. Observations of strained and polycrystalline Te precipitates are also discussed with relevance to the ab initio model and to impacts on electronic properties.

Henager, Charles H.; Edwards, Danny J.; Schemer-Kohrn, Alan L.; Bliss, Mary; Jaffe, John E.

2009-05-18T23:59:59.000Z

82

CdTe PV: Real and Perceived EHS Risks  

DOE Green Energy (OSTI)

As CdTe photovoltaics reached commercialization, questions have been raised about potential cadmium emissions from CdTe PV modules. Some have attacked the CdTe PV technology as unavoidably polluting the environment, and made comparisons of hypothetical emissions from PV modules to cadmium emissions from coal fired power plants. This paper gives an overview of the technical issues pertinent to these questions and further explores the potential of EHS risks during production, use and decommissioning of CdTe PV modules. The following issues are discussed: (a) The physical and toxicological properties of CdTe, (b) comparisons of Cd use in CdTe PV with its use in other technologies and products, and the (c) the possibility of CdTe releases from PV modules.

Fthenakis, V.; Zweibel, K.

2003-05-01T23:59:59.000Z

83

SeWave | Open Energy Information  

Open Energy Info (EERE)

form form View source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon » SeWave Jump to: navigation, search Name SeWave Place Denmark Zip FO-110 Product Denmark-based 50:50 JV between UK's Wavegen and Faroese electricity company SEV to to design and build a tunnelled demonstration wave power plant in the Faroes Islands. References SeWave[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This company is listed in the Marine and Hydrokinetic Technology Database. This article is a stub. You can help OpenEI by expanding it. SeWave is a company located in Denmark . References ↑ "SeWave"

84

Spectroscopic Cathodoluminescence Studies of the ZnTe:Cu Contact Process for CdS/CdTe Solar Cells: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the spectroscopic cathodoluminescence (CL), electron-beam induced current (EBIC), and capacitance-Voltage (C-V) measurements are used to study the formation of CdS/CdTe devices processed using ion-beam milling and a ZnTe:Cu/Ti contact. Results show heating in vacuum at {approx}360 C and ion-beam milling lead to observable changes in the CL emission from the CdCl2-treated CdTe surface. Changes in the CL spectrum are also observed as ZnTe:Cu layer thickness increases. These changes are correlated to published studies of defect levels and shown to be due, possibly, to an n-type region existing between the ZnTe:Cu contact interface and the p-CdTe layers. This n-type region is eliminated once a sufficiently thick ZnTe:Cu layer is produced.

Gessert, T. A.; Romero, M. J.; Johnston, S.; Keyes, B.; Dippo, P.

2002-05-01T23:59:59.000Z

85

ZnSe light?emitting diodes  

Science Conference Proceedings (OSTI)

We report the successful fabrication of ZnSe p?n junction light?emitting diodes in which Li and Cl are used as p?type and n?type dopants

J. Ren; K. A. Bowers; B. Sneed; D. L. Dreifus; J. W. Cook Jr.; J. F. Schetzina; R. M. Kolbas

1990-01-01T23:59:59.000Z

86

Lutron Electronics: Noncompliance Determination (2012-SE-3796...  

NLE Websites -- All DOE Office Websites (Extended Search)

(2012-SE-3796) June 5, 2013 DOE issued a Notice of Noncompliance Determination to Lutron Electronics Co., Inc. finding that a variety of Class A external power supply basic models...

87

Exciton spectroscopy on single CdSe/ZnSe quantum dot photodiodes  

Science Conference Proceedings (OSTI)

We have investigated the properties of neutral and charged excitons in single CdSe/ZnSe QD photodiodes by @m-photoluminescence spectroscopy. By applying a bias voltage, we have been able to control the number of electrons in a single QD by shifting the ... Keywords: CdSe quantum dots, Photodiode, Stark effect

S. Michaelis de Vasconcellos; A. Pawlis; C. Arens; M. Panfilova; A. Zrenner; D. Schikora; K. Lischka

2009-02-01T23:59:59.000Z

88

CdZnTe technology for gamma ray detectors  

Science Conference Proceedings (OSTI)

CdZnTe detector technology has been developed at NASA Goddard for imaging and spectroscopy applications in hard x-ray and gamma ray astronomy. A CdZnTe strip detector array with capabilities for arc second imaging and spectroscopy has been built as a prototype for a space flight gamma ray burst instrument. CdZnTe detectors also have applications for medical imaging

Carl Stahle; Jack Shi; Peter Shu; Scott Barthelmy; Ann Parsons; Steve Snodgrass

1998-01-01T23:59:59.000Z

89

Liquidus Projection of Thermoelectric Ag-Sn-Te Ternary System  

Science Conference Proceedings (OSTI)

Presentation Title, Liquidus Projection of Thermoelectric Ag-Sn-Te Ternary ... Ag Decorated Al Nanoparticles as Novel Ink Materials for Printed Electronics ...

90

Geochemistry of the Yutangba Se deposit in western Hubei, China  

Science Conference Proceedings (OSTI)

In the Se ores and abandoned stone coal pile at the Yutangba Se deposit there ... of Se minerals due to secondary enrichment of selenium in the stone coal ...

91

I2SE | Open Energy Information  

Open Energy Info (EERE)

I2SE I2SE Jump to: navigation, search Name I2SE Place Leipzig, Germany Zip 4103 Sector Efficiency Product IT company providing solutions for energy efficiency and data transmission. Coordinates 51.3452°, 12.38594° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":51.3452,"lon":12.38594,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

92

Goodman Manufacturing: Noncompliance Determination (2011-SE-4301) |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Noncompliance Determination (2011-SE-4301) Noncompliance Determination (2011-SE-4301) Goodman Manufacturing: Noncompliance Determination (2011-SE-4301) October 17, 2011 DOE issued a Notice of Noncompliance Determination to Goodman Manufacturing finding that model CPC180XXX3BXXXAA (CPC180*) of commercial package air conditioner does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing . Goodman must immediately notify each person (or company) to whom Goodmany distributed the noncompliant products that the product does not meet Federal standards. In addition, Goodman must provide to DOE documents and records showing the number of units Goodman distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil

93

Summit Manufacturing: Noncompliance Determination (2010-SE-0303) |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Summit Manufacturing: Noncompliance Determination (2010-SE-0303) Summit Manufacturing: Noncompliance Determination (2010-SE-0303) Summit Manufacturing: Noncompliance Determination (2010-SE-0303) May 28, 2010 DOE issued a Notice of Noncompliance Determination to Summit Manufacturing, Inc. finding that 4SHP13LE136P + 15001+CA042A964+TDR basic model, a split-system air conditioning heat pump with a heat pump coil, does not comport with the energy conservation standards. DOE determined the product was noncompliant based on the company's own testing. Summit must immediately notify each person (or company) to whom Summit distributed the noncompliant products that the product does not meet Federal standards. In addition, Summit must provide to DOE documents and records showing the number of units Summit distributed and to whom. The manufacturer and/or

94

X-ray luminescence of CdTe quantum dots in LaF{sub 3}:Ce/CdTe nanocomposites  

Science Conference Proceedings (OSTI)

CdTe quantum dots have intense photoluminescence but exhibit almost no x-ray luminescence. However, intense x-ray luminescence from CdTe quantum dots is observed in LaF{sub 3}:Ce/CdTe nanocomposites. This enhancement in the x-ray luminescence of CdTe quantum dots is attributed to the energy transfer from LaF{sub 3}:Ce to CdTe quantum dots in the nanocomposites. The combination of LaF{sub 3}:Ce nanoparticles and CdTe quantum dots makes LaF{sub 3}:Ce/CdTe nanocomposites promising scintillators for radiation detection.

Hossu, Marius; Liu Zhongxin; Yao Mingzhen; Ma Lun; Chen Wei

2012-01-02T23:59:59.000Z

95

KTH Mechanics SE-100 44 Stockholm, Sweden  

E-Print Network (OSTI)

KTH Mechanics SE-100 44 Stockholm, Sweden Activity Report 2006 Contents 1. Introduction 2. 3 Publications and conference presentations during 2006 5. 4 Seminars at Mechanics, KTH 1 #12 of Mechanics, KTH during the year of 2006. More information may be found at the department web site http

Haviland, David

96

KTH Mechanics SE-100 44 Stockholm, Sweden  

E-Print Network (OSTI)

KTH Mechanics SE-100 44 Stockholm, Sweden Activity Report 2005 Contents 1. Introduction 2. 3 Publications and conference presentations during 2005 5. 4 Seminars at Mechanics, KTH 1 #12 of Mechanics, KTH during the year of 2005. More information may be found at the department web site http

Haviland, David

97

KTH Mechanics SE-100 44 Stockholm, Sweden  

E-Print Network (OSTI)

KTH Mechanics SE-100 44 Stockholm, Sweden Activity Report 2009 Contents 1. Introduction 2 a short overview of the structure and activities at the depart- ment of Mechanics, KTH during the year courses in mechanics, fluid mechanics and structural mechanics given for students and programmes from

Haviland, David

98

Bright CdSe quantum dot inserted in single ZnSe nanowires  

Science Conference Proceedings (OSTI)

We report the evidence of CdSe quantum dot (QD) insertion in single defect-free ZnSe nanowire. These nanowires have been grown by molecular beam epitaxy in vapour-liquid-solid growth mode catalysed with gold particles. We developed a two-step process ... Keywords: µPL, Antibunching, CdSe, Correlation measurement, Micro photoluminescence, Polarisation, Single NW, Single QD, Single nanowire, Single nanowire heterostructures, Single quantum dot, TRPL, Time-resolved photoluminescence, Two-step process, ZnSe

A. Tribu; G. Sallen; T. Aichele; C. Bougerol; R. André; J. P. Poizat; S. Tatarenko; K. Kheng

2009-02-01T23:59:59.000Z

99

CdS/CdTe Solar Cells Containing Directly Deposited CdSxTe1-x Alloy Layers: Preprint  

DOE Green Energy (OSTI)

A CdSxTe1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdSxTe1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdSxTe1-x region. Further understanding, however, is essential to predict the role of this CdSxTe1-x layer in the operation of CdS/CdTe devices. In this study, CdSxTe1-x alloy films were deposited by radio-frequency (RF) magnetron sputtering and co-evaporation from CdTe and CdS sources. Both RF-magnetron-sputtered and co-evaporated CdSxTe1-x films of lower S content (x<0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl2 heat treatment (HT) at ~400 degrees C for 5 min. Films sputtered in a 1% O2/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl2 HT. Films sputtered in O2 partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films. Initial PV device results show that the introduction of a directly-deposited CdSxTe1-x alloy layer into the device structure produces devices of comparable performance to those without the alloy layer when a CdCl2 HT is performed. Further investigation is required to determine whether the CdCl2 heat treatment step can be altered or eliminated through direct deposition of the alloy layer.

Duenow, J. N.; Dhere, R. G.; Moutinho, H. R.; To, B.; Pankow, J. W.; Kuciauskas, D.; Gessert, T. A.

2011-07-01T23:59:59.000Z

100

Excited quark production at a 100 TeV VLHC  

E-Print Network (OSTI)

I look for a dijet resonance produced by an excited quark q* in a simulated sample corresponding to 3 ab^{-1} of pp collisions at $\\sqrt{s} = 100$ TeV. Using a cut and count analysis approach I demonstrate the potential to explore q* masses up to 50 TeV, corresponding to a length scale of around 4 am.

Jacob Anderson

2013-09-03T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Excited quark production at a 100 TeV VLHC  

E-Print Network (OSTI)

I look for a dijet resonance produced by an excited quark q* in a simulated sample corresponding to 3 ab^{-1} of pp collisions at $\\sqrt{s} = 100$ TeV. Using a cut and count analysis approach I am able to explore q* masses up to 50 TeV, corresponding to a length scale of around 4 am.

Anderson, Jacob

2013-01-01T23:59:59.000Z

102

Phase transition on CdSe thin films by changing the volume concentration of Se  

Science Conference Proceedings (OSTI)

In this work CdSe thin films were grown by chemical bath deposition (CBD)6 onto glass substrate with approximately 2000 Å thickness. The samples have been prepared by changing the volume concentration of the solution in the range of 5-45 ... Keywords: CdSe, thin films, chemical bath, phase transitions, semiconductors

M. Rubín; J. I. Cortez; H. Juárez; E. Rosendo; T. Díaz; G. García Salgado; I. Villaverde; R. Lozada-Morales; O. Portillo-Moreno; O. Zelaya-Ngel

2007-07-01T23:59:59.000Z

103

Laser irradiation effects on the CdTe/ZnTe quantum dot structure studied by Raman and AFM spectroscopy  

SciTech Connect

Micro-Raman spectroscopy has been applied to investigate the impact of laser irradiation on semiconducting CdTe/ZnTe quantum dots (QDs) structures. A reference sample (without dots) was also studied for comparison. Both samples were grown by molecular beam epitaxy technique on the p-type GaAs substrate. The Raman spectra have been recorded for different time of a laser exposure and for various laser powers. The spectra for both samples exhibit peak related to the localized longitudinal (LO) ZnTe phonon of a wavenumber equal to 210 cm{sup -1}. For the QD sample, a broad band corresponding to the LO CdTe phonon related to the QD-layer appears at a wavenumber of 160 cm{sup -1}. With increasing time of a laser beam exposure and laser power, the spectra get dominated by tellurium-related peaks appearing at wavenumbers around 120 cm{sup -1} and 140 cm{sup -1}. Simultaneously, the ZnTe surface undergoes rising damage, with the formation of Te aggregates at the pinhole edge as reveal atomic force microscopy observations. Local temperature of irradiated region has been estimated from the anti-Stokes/Stokes ratio of the Te modes intensity and it was found to be close or exceeding ZnTe melting point. Thus, the laser damage can be explained by the ablation process.

Zielony, E.; Placzek-Popko, E.; Henrykowski, A.; Gumienny, Z.; Kamyczek, P.; Jacak, J. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Nowakowski, P.; Karczewski, G. [Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw (Poland)

2012-09-15T23:59:59.000Z

104

Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films  

DOE Patents (OSTI)

A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

Gessert, Timothy A. (Conifer, CO)

1999-01-01T23:59:59.000Z

105

Effects of Te inclusions on the performance of CdZnTe radiation detectors  

Science Conference Proceedings (OSTI)

Te inclusions existing at high concentrations in CdZnTe (CZT) material can degrade the performance of CZT detectors. These microscopic defects trap the free electrons generated by incident radiation, so entailing significant fluctuations in the total collected charge and thereby strongly affecting the energy resolution of thick (long-drift) detectors. Such effects were demonstrated in thin planar detectors, and, in many cases, they proved to be the dominant cause of the low performance of thick detectors, wherein the fluctuations in the charge losses accumulate along the charge's drift path. We continued studying this effect using different tools and techniques. We employed a dedicated beamline recently established at BNL's National Synchrotron Light Source for characterizing semiconductor radiation detectors, along with an IR transmission microscope system, the combination of which allowed us to correlate the concentration of defects with the devices performances. We present here our new results from testing over 50 CZT samples grown by different techniques. Our goals are to establish tolerable limits on the size and concentrations of these detrimental Te inclusions in CZT material, and to provide feedback to crystal growers to reduce their numbers in the material.

Bolotnikov,A.E.; Abdul-Jabber, N. M.; Babalola, O. S.; Camarda, G. S.; Cui, Y.; Hossain, A. M.; Jackson, E. M.; Jackson, H. C.; James, J. A.; Kohman, K. T.; Luryi, A. L.; James, R. B.

2008-10-19T23:59:59.000Z

106

The Periodic Table of Elements C  

NLE Websites -- All DOE Office Websites (Extended Search)

Atomic Number Chemical Symbol Atomic Weight Chemical Name = Solid at room temperature = Liquid at room temperature = Gas at room temperature = Radioactive = Artificially Made KEY METALS NON-METALS 12.011 http://education.jlab.org/ Last revised on April 3, 2013 [294] H Li Na K Be Mg Ca Sc Ti Rb Cs Fr Sr Y Ba Ra Zr Hf Rf V Nb Ta Db Cr Mo W Sg Mn Tc Re Bh Fe Ru Os Hs Co Rh Ir Mt Ni Pd Pt Ds Cu Ag Au Rg Zn Cd Hg Cn Ga In Tl Uut Ge Sn Pb Fl As Sb Bi Uup Se Te Po Lv Br I At Uus Kr Xe Rn Uuo La Ac Ce Th Pr Pa Nd U Pm Np Sm Pu Eu Am Gd Cm Tb Bk Dy Cf Ho Es Er Fm Tm Md Yb Yb No Lu Lr B Al C Si N P O S F Cl Ne He Ar HYDROGEN LITHIUM SODIUM POTASSIUM BERYLLIUM MAGNESIUM CALCIUM SCANDIUM TITANIUM RUBIDIUM CESIUM FRANCIUM STRONTIUM YTTRIUM BARIUM RADIUM ZIRCONIUM HAFNIUM RUTHERFORDIUM VANADIUM NIOBIUM TANTALUM DUBNIUM CHROMIUM MOLYBDENUM TUNGSTEN SEABORGIUM MANGANESE TECHNETIUM RHENIUM BOHRIUM IRON RUTHENIUM OSMIUM HASSIUM

107

The Periodic Table of Elements C  

NLE Websites -- All DOE Office Websites (Extended Search)

.011 .011 Atomic Number Chemical Symbol Atomic Weight Chemical Name = Solid at room temperature = Liquid at room temperature = Gas at room temperature = Radioactive = Artificially Made KEY METALS NON-METALS http://education.jlab.org/ Last revised on April 3, 2013 [294] H Li Na K Be Mg Ca Sc Ti Rb Cs Fr Sr Y Ba Ra Zr Hf Rf V Nb Ta Db Cr Mo W Sg Mn Tc Re Bh Fe Ru Os Hs Co Rh Ir Mt Ni Pd Pt Ds Cu Ag Au Rg Zn Cd Hg Cn Ga In Tl Uut Ge Sn Pb Fl As Sb Bi Uup Se Te Po Lv Br I At Uus Kr Xe Rn Uuo La Ac Ce Th Pr Pa Nd U Pm Np Sm Pu Eu Am Gd Cm Tb Bk Dy Cf Ho Es Er Fm Tm Md Yb Yb No Lu Lr B Al C Si N P O S F Cl Ne He Ar HYDROGEN LITHIUM SODIUM POTASSIUM BERYLLIUM MAGNESIUM CALCIUM SCANDIUM TITANIUM RUBIDIUM CESIUM FRANCIUM STRONTIUM YTTRIUM BARIUM RADIUM ZIRCONIUM HAFNIUM RUTHERFORDIUM VANADIUM NIOBIUM TANTALUM DUBNIUM CHROMIUM MOLYBDENUM TUNGSTEN SEABORGIUM MANGANESE TECHNETIUM RHENIUM BOHRIUM IRON RUTHENIUM OSMIUM HASSIUM COBALT

108

Process Development for High Voc CdTe Solar Cells  

DOE Green Energy (OSTI)

This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

Ferekides, C. S.; Morel, D. L.

2011-05-01T23:59:59.000Z

109

Formation of ZnTe:Cu/Ti Contacts at High Temperature for CdS/CdTe Devices: Preprint  

DOE Green Energy (OSTI)

We study the performance of CdS/CdTe thin-film devices contacted with ZnTe:Cu/Ti of various thickness at a higher-than-optimum temperature of {approx}360 C. At this temperature, optimum device performance requires the same thickness of ZnTe:Cu as for similar contacts formed at a lower temperature of 320 C. C-V analysis indicates that a ZnTe:Cu layer thickness of {approx}< 0.5 mu m does not yield the degree of CdTe net acceptor concentration necessary to reduce space charge width to its optimum value for n-p device operation. The thickest ZnTe:Cu layer investigated (1 mu m) yields the highest CdTe net acceptor concentration, lowest value of Jo, and highest Voc. However, performance is limited for this device by poor fill factor. We suggest poor fill factor is due to Cu-related acceptors compensating donors in CdS.

Gessert, T. A.; Asher, S.; Johnston, S.; Duda, A.; Young, M. R.; Moriarty, T.

2006-05-01T23:59:59.000Z

110

Whirlpool: Data Request (2010-SE-0103) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Data Request (2010-SE-0103) Whirlpool: Data Request (2010-SE-0103) April 5, 2010 DOE received information that a model of refrigerator-freezer manufactured by Whirlpool Corporation...

111

SeQuential Pacific Biodiesel LLC | Open Energy Information  

Open Energy Info (EERE)

Pacific Biodiesel LLC Jump to: navigation, search Name SeQuential-Pacific Biodiesel LLC Place Oregon Sector Biofuels Product JV between SeQuential Biofuels, Pacific Biodiesel, and...

112

2011-SE-1418 Sears_NND  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Sears, Roebuck & Co. Sears, Roebuck & Co. (freezers) Issued: June 26, 2012 BEFORE THE U.S. DEPARTMENT OF ENERGY Washington, D.C. 20585 ) ) ) ) ) Case Number: 2011-SE-1418 NOTICE OF NONCOMPLIANCE DETERMINATION Manufacturers and private labelers are prohibited from distributing covered products that do not comply with applicable federal energy conservation standards. 10 C.F.R. § 429.102; 42 U.S.C. § 6302. On September 22, 2011, DOE completed testing of one compact chest freezer, Kenmore-brand model number 255.19702010 ("19702"), privately labeled and distributed in commerce in the U.S. by Sears, Roebuck & Co. ("Sears") and manufactured in China. In December 2011 and January 2012, DOE completed testing oftln·ee additional units of 19702. DOE's testing was

113

Summit Manufacturing: Noncompliance Determination (2010-SE-0303)  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

the the Matter of: Summit Manufacturing, Inc. Case Number 2010-SE-0303 NOTICE OF NONCOMPLIANCE DETERMINATION CERTIFICATION Manufacturers of certain covered products are required to certify compliance with the applicable energy conservation standards through submission of a compliance statement and a certification report. 10 CFR § 430.62. See 42 U.S.C. 6296 . The compliance statement is a legal statement by the manufacturer that the information provided in its certification reports is true , accurate and complete, that the basic models certified meet the applicable energy conservation standard, that the energy efficiency information report is the result of testing performed in conformance with the applicable test requirements in 10 CFR part 430, subpart B; and that the manufacturer is

114

CdTe portfolio offers commercial ready high efficiency solar ...  

This characteristic is due partly to the single-phase nature of the absorber layer and the ease with which the CdTe source ... Wind Energy; Partners (27) Visual ...

115

Advances in CdTe R&D at NREL  

DOE Green Energy (OSTI)

This paper summarizes the following R&D accomplishments at National Renewable Energy Laboratory (NREL): (1) Developed several novel materials and world-record high-efficiency CdTe solar cell, (2) Developed "one heat-up step" manufacturing processes, and (3) Demonstrated 13.9% transparent CdTe cell and 15.3% CdTe/CIS polycrystalline tandem solar cell. Cadmium telluride has been well recognized as a promising photovoltaic material for thin-film solar cells because of its near-optimum bandgap of ~1.5 eV and its high absorption coefficient. Impressive results have been achieved in the past few years for polycrystalline CdTe thin-film solar cells at NREL. In this paper, we summarize some recent R&D activities at NREL.

Wu, X.; Zhou, J.; Keane, J. C.; Dhere, R. G.; Albin, D. S.; Gessert, T. A.; DeHart, C.; Duda, A.; Ward, J. J.; Yan, Y.; Teeter, G.; Levi, D. H.; Asher, S.; Perkins, C.; Moutinho, H. R.; To, B.

2005-11-01T23:59:59.000Z

116

Extreme solid state refrigeration using nanostructured Bi-Te alloys.  

SciTech Connect

Materials are desperately needed for cryogenic solid state refrigeration. We have investigated nanostructured Bi-Te alloys for their potential use in Ettingshausen refrigeration to liquid nitrogen temperatures. These alloys form alternating layers of Bi{sub 2} and Bi{sub 2}Te{sub 3} blocks in equilibrium. The composition Bi{sub 4}Te{sub 3} was identified as having the greatest potential for having a high Ettingshausen figure of merit. Both single crystal and polycrystalline forms of this material were synthesized. After evaluating the Ettingshausen figure of merit for a large, high quality polycrystal, we simulated the limits of practical refrigeration in this material from 200 to 77 K using a simple device model. The band structure was also computed and compared to experiments. We discuss the crystal growth, transport physics, and practical refrigeration potential of Bi-Te alloys.

Lima Sharma, Ana L. (San Jose State University, San Jose, CA); Spataru, Dan Catalin; Medlin, Douglas L.; Sharma, Peter Anand; Morales, Alfredo Martin

2009-09-01T23:59:59.000Z

117

Synthesis and characterization of ZnTe hierarchical nanostructures  

Science Conference Proceedings (OSTI)

Single-crystalline ZnTe hierarchical nanostructures have been successfully synthesized by a simple thermal evaporation technology. The as-prepared products were characterized with X-ray diffraction (XRD), scanning electron microcopy (SEM), transmission ...

Baohua Zhang; Fuqiang Guo; Wei Wang

2012-01-01T23:59:59.000Z

118

Supply Chain Dynamics of Tellurium (Te), Indium (In), and Gallium...  

NLE Websites -- All DOE Office Websites (Extended Search)

CdTe Solar Cells, Solar Energy Materials and Solar Cells, 90 (2006) 2263-2271. 3 CRC Handbook of Chemistry and Physics, CRC Press, Boca Raton, FL, 1986. 4 M.A. Green, K....

119

VUV Detector Calibrations - CsTe Photodiode Description  

Science Conference Proceedings (OSTI)

... telluride (CsTe) photodetectors with magnesium fluoride (MgF 2 ) windows are issued by ... telluride film is deposited onto a MgF 2 window and then ...

2011-12-30T23:59:59.000Z

120

Strategies for recycling CdTe photovoltaic modules  

DOE Green Energy (OSTI)

Recycling end-of-life cadmium telluride (CdTe) photovoltaic (PV) modules may enhance the competitive advantage of CdTe PV in the marketplace, but the experiences of industries with comparable Environmental, Health and Safety (EH&S) challenges suggest that collection and recycling costs can impose significant economic burdens. Customer cooperation and pending changes to US Federal law may improve recycling economics.

Eberspacher, C.; Gay, C.F. [UNISUN, Newbury Park, CA. (United States); Moskowitz, P.D. [Brookhaven National Lab., Upton, NY (United States)

1994-12-31T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Effect of Heating, Ion-Beam Milling, and ZnTe:Cu Deposition on the Spectroscopic Cathodoluminescence of Polycrystalline CdTe: Preprint  

DOE Green Energy (OSTI)

Presented at the 2001 NCPV Program Review Meeting: Cathodoluminescence used to study evolution of electro-optical properties of back surface of CdS/CdTe during initial steps of fabricating NREL ZnTe:Cu contact.

Gessert, T. A.; Romero, M. J.; Asher, S. E.

2001-10-01T23:59:59.000Z

122

A simple and efficient method for synthesizing te nanowires from CdTe nanoparticles with EDTA as shape controller under hydrothermal condition  

Science Conference Proceedings (OSTI)

We developed a simple and efficient method for synthesizing Te nanowires from CdTe nanoparticles with ethylenediaminetetraacetic acid disodium salt dehydrate (EDTA) as shape controller under hydrothermal condition. The systemcould both complete the transformation ...

Fangfang Xue; Ning Bi; Jiangong Liang; Heyou Han

2012-01-01T23:59:59.000Z

123

Metabolism of selenium (Se) in rats chronically poisoned with D- or L-selenomethionine (SeMet), selenite or selenate  

SciTech Connect

L-SeMet is a potential cancer chemoprevention agent for humans. Little difference was seen in the acute toxicity of L vs. D-SeMet in rats. To study chronic toxicity, weanling male rats were fed purified diets containing 2.5, 5.0 or 10 ppm Se as L-SeMet, D-SeMet, Na/sub 2/SeO/sub 3/ or Na/sub 2/SeO/sub 4/ for 6 weeks. Controls received 0.1 ppm Se as selenite. All rats fed 10 ppm Se died within 29 days. Se fed as D-SeMet was retained in the tissues as strongly as L-SeMet. Rats fed D or L-SeMet deposited large amounts of Se in muscle not reflected by proportionate increases in either plasma or RBC Se. Therefore, attempts to follow increases in Se body burden in individuals supplemented with large doses of L-SeMet by monitoring plasma or whole blood Se levels should be interpreted with caution.

McAdam, P.A.; Levander, O.A.

1986-03-01T23:59:59.000Z

124

Temperature dependent band offsets in PbSe/PbEuSe quantum well heterostructures  

Science Conference Proceedings (OSTI)

The band offsets of PbSe/Pb{sub 1-x}Eu{sub x}Se multi-quantum wells grown by molecular beam epitaxy are determined as a function of temperature and europium content using temperature-modulated differential transmission spectroscopy. The confined quantum well states in the valence and conduction bands are analyzed using a k{center_dot}p model with envelope function approximation. From the fit of the experimental data, the normalized conduction band offset is determined as 0.45{+-}0.15 of the band gap difference, independently of Eu content up to 14% and temperature from 20 to 300 K.

Simma, M.; Bauer, G.; Springholz, G. [Institut fuer Halbleiter und Festkoerperphysik, Johannes Kepler Universitaet, A-4040 Linz (Austria)

2012-10-22T23:59:59.000Z

125

High pressure transport characteristics of Bi[subscript 2]Te[subscript 3], Sb[subscript 2]Te[subscript 3], and BiSbTe[subscript 3  

Science Conference Proceedings (OSTI)

This paper presents ambient and high pressure measurements of transport properties of the Bi2Te3-Sb2Te3 series of materials. The electrical resistivity, thermal conductivity, and Seebeck coefficient have been measured on both end compounds and the direct solid solution of the two at pressure up to 10 GPa. An additional discussion involving the high pressure structure will be presented. From this, it was determined that these materials undergo at least two structural phase transitions between 0 and 20 GPa and a discussion is presented regarding this and the changes in the transport properties.

Jacobsen, M.K.; Sinogeikin, S.V.; Kumar, R.S.; Cornelius, A.L. (UNLV); (CIW)

2012-07-25T23:59:59.000Z

126

Effects of Cu Diffusion from ZnTe:Cu/Ti Contacts on Carrier Lifetime of CdS/CdTe Thin Film Solar Cells: Preprint  

DOE Green Energy (OSTI)

We study the performance of CdS/CdTe thin film PV devices processed with a ZnTe:Cu/Ti contact to investigate how carrier lifetime in the CdTe layer is affected by Cu diffusion from the contact.

Gessert, T. A.; Metzger, W. K.; Asher, S. E.; Young, M. R.; Johnston, S.; Dhere, R. G.; Duda, A.

2008-05-01T23:59:59.000Z

127

The effects of the band bending caused by interface states in CdTe and CIS solar cells  

DOE Green Energy (OSTI)

In this paper, the effects of interface states in the Z-nO/CdS/CuinSe{sub 2}, and CdS/CdTe solar cells are presented. The effects are investigated through numerical modeling using ADEPT (A Device Emulation Program and Tool). The results show that donor-like interface states have very little effect but acceptor-like interface states at the resistive ZnO/CdS can cause pinning of the bands at the interface, thus leading to non-exponential illuminated I-V curves when the interface state densities are high enough. High density of acceptor-like states between the CdS and In-rich CIS does not result in the two-diode like IV curves. Instead they can significantly lower the fill factor. In the CdS/CdTe solar cells. either donor- or acceptor-like interface states have little effect since almost all the depletion region lies in the CdTe. Thus, the metallurgical junction where the interface states are located is away from the electrical junction where the conductivity type changes.

Lee, Youn-Jung; Gray, J.L. [Purdue Univ., Lafayette, IN (United States). School of Electrical Engineering

1994-12-31T23:59:59.000Z

128

High-Efficiency CdTe and CIGS Thin-Film Solar Cells: Highlights and Challenges  

Science Conference Proceedings (OSTI)

Thin-film photovoltaic (PV) modules of CdTe and Cu(In,Ga)Se{sub 2} (CIGS) have the potential to reach cost-effective PV-generated electricity. These technologies have transitioned from the laboratory to the market place. Pilot production and first-time manufacturing are ramping up to higher capacity and enjoying a flood of venture-capital funding. CIGS solar cells and modules have achieved 19.5% and 13% efficiencies, respectively. Likewise, CdTe cells and modules have reached 16.5% and 10.2% efficiencies, respectively. Even higher efficiencies from the laboratory and from the manufacturing line are only a matter of time. Manufacturing-line yield continues to improve and is surpassing 85%. Long-term stability has been demonstrated for both technologies; however, some failures in the field have also been observed, emphasizing the critical need for understanding degradation mechanisms and packaging options. These two thin-film technologies have a common device/module structure: substrate, base electrode, absorber, junction layer, top electrode, patterning steps for monolithic integration, and encapsulation. The monolithic integration of thin-film solar cells can lead to significant manufacturing cost reduction compared to crystalline Si technology. The CdTe and CIGS modules share common structural elements. In principle, this commonality should lead to similar manufacturing cost per unit area, and thus, the module efficiency becomes the discriminating factor that determines the cost per watt. The long-term potential of the two technologies require R&D emphasis on science and engineering-based challenges to find solutions to achieve targeted cost-effective module performance, and in-field durability. Some of the challenges are common to both, e.g., in-situ process control and diagnostics, thinner absorber, understanding degradation mechanisms, protection from water vapor, and innovation in high-speed processing and module design. Other topics are specific to the technology, such as lower-cost and fast-deposition processes for CIGS, and improved back contact and voltage for CdTe devices.

Noufi, R.; Zweibel, K.

2006-01-01T23:59:59.000Z

129

Manufacturing technology development for CuInGaSe sub 2 solar cell modules  

DOE Green Energy (OSTI)

The report describes research performed by Boeing Aerospace and Electronics under the Photovoltaic Manufacturing Technology project. We anticipate that implementing advanced semiconductor device fabrication techniques to the production of large-area CuIn{sub 1-x}Ga{sub x}Se{sub 2} (CIGS)/Cd{sub 1-y}Zn{sub y}S/ZnO monolithically integrated thin-film solar cell modules will enable 15% median efficiencies to be achieved in high-volume manufacturing. We do not believe that CuInSe{sub 2} (CIS) can achieve this efficiency in production without sufficient gallium to significantly increase the band gap, thereby matching it better to the solar spectrum (i.e., x{ge}0.2). Competing techniques for CIS film formation have not been successfully extended to CIGS devices with such high band gaps. The SERI-confirmed intrinsic stability of CIS-based photovoltaics renders them far superior to a-Si:H-based devices, making a 30-year module lifetime feasible. The minimal amounts of cadmium used in the structure we propose, compared to CdTe-based devices, makes them environmentally safer and more acceptable to both consumers and relevant regulatory agencies. Large-area integrated thin-film CIGS modules are the product most likely to supplant silicon modules by the end of this decade and enable the cost improvements which will lead to rapid market expansion.

Stanbery, B.J. (Boeing Aerospace and Electronics Co., Seattle, WA (United States))

1991-11-01T23:59:59.000Z

130

Electrical Characterization of Cu Composition Effects in CdS/CdTe Thin-Film Solar Cells with a ZnTe:Cu Back Contact: Preprint  

DOE Green Energy (OSTI)

We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at {approx}0.55 eV whose concentration is significant when the Cu concentration is high. The device performance, which initially increases with Cu concentration then decreases, reflects the interplay between the positive influences and negative influences (increasing deep levels in CdTe) of Cu.

Li, J. V.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Dhere, R. G.; Young, M. R.; Levi, D. H.

2012-07-01T23:59:59.000Z

131

The half-life of {sup 131g,m}Te  

SciTech Connect

In this work, the half-lives of {sup 131m}Te and {sup 131g}Te were measured. Radioactive sources of {sup 131}Te were obtained using the {sup 130}Te(n,{gamma}){sup 131}Te nuclear reaction. These nuclear parameters have been determined with a better confidence and accuracy than previously available: 18.89 {+-} 0.11 min and 33.18 {+-} 0.13 h, respectively. These results are quite helpful for new calculations that attempt to describe the low-lying levels in {sup 131}I from the decay of {sup 131g,m}Te.

Ruivo, J. C.; Zamboni, C. B. [Instituto de Pesquisas Energeticas e Nucleares (IPEN / CNEN - SP) Av. Professor Lineu Prestes 2242 05508-000 Sao Paulo, SP (Brazil); Oliveira, J. R. B. [Instituto de Fisica da Universidade de Sao Paulo, Brazil Travessa R da Rua do Matao 187 05508-090 Sao Paulo, SP (Brazil); Heder Medina, Nilberto

2013-05-06T23:59:59.000Z

132

Thermoelectric figure of merit of Ag{sub 2}Se with Ag and Se excess  

Science Conference Proceedings (OSTI)

In the temperature range of 100-300 K, the electric ({sigma}) and thermoelectric ({alpha}{sub 0}) properties of Ag{sub 2}Se with an excess of Ag as high as {approx}0.1 at. % and Se as high as {approx}1.0 at. %, respectively, are investigated. From the data on {sigma}, {alpha}{sub 0}, and {chi}{sub tot} (thermal conductivities), the thermoelectric power {alpha}{sub 0}{sup 2}{sigma} and the figure of merit Z are calculated. It is found that {alpha}{sub 0}{sup 2}{sigma} and Z attain the peak values at room temperature and the electron concentration n {approx} 6.5 x 10{sup 18} cm{sup -3}.

Aliev, F. F., E-mail: farzali@physics.ab.az; Jafarov, M. B.; Eminova, V. I. [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan)

2009-08-15T23:59:59.000Z

133

Procedure for separation of Se and determination of Se-79 by liquid scintillation  

Science Conference Proceedings (OSTI)

This report describes the development work and demonstration of a technique for separation of selenium suitable for determination of Se-79 by liquid scintillation counting. The technique has been demonstrated on actual DWPF (Defense Waste Processing Facility) sludge samples which contain very large loads of Sr-90 activity. The separation required a decontamination of selenium from Sr by a factor of over 10{sup 6}, from Co and Cs by factor of 10{sup 4}, and from Tc-99 by a factor of 100, while still maintaining a selenium recovery of about 50%. Using this technique the author has determined Se-79 in five actual DWPF samples with a precision of about 70% relative standard deviation. This separation has not been demonstrated on actual DWPF samples which have the largest Cs-137 loads. He does not anticipate that these untested samples will present a difficult problem.

Dewberry, R.A.

1991-08-11T23:59:59.000Z

134

A 3 TeV Muon Collider Lattice Design  

SciTech Connect

A new lattice for 3 TeV c.o.m. energy with {beta}* = 5mm was developed which follows the basic concept of the earlier 1.5 TeV design but uses quad triplets for the final focus in order to keep the maximum magnet strength and aperture close to those in 1.5 TeV case. Another difference is employment of combined-function magnets with the goal to lower heat deposition in magnet cold mass and to eliminate bending field free regions which produce 'hot spots' of neutrino radiation that can be an issue at higher energy. The proposed lattice is shown to satisfy the requirements on luminosity, dynamic aperture and momentum acceptance.

Alexahin, Y.; Gianfelice-Wendt, E.; /Fermilab

2012-05-01T23:59:59.000Z

135

CdTe and Cd0.9Zn0.1Te Crystal Growth and Characterization for Nuclear Spectrometers  

Science Conference Proceedings (OSTI)

Large volume single crystals of CdTe and Cd0.9Zn0.1Te (CZT) have been grown by a controlled vertical Bridgman technique using in-house zone refined precursors and characterized through structural, electrical, optical, and spectroscopic methods. The grown crystals (diameter greater than or equal to 2.5 cm and length >10 cm) have shown promising characteristics for high-resolution room temperature solid-state radiation detectors due to their high resistivity (~1010 -cm for CdTe, and >1011 -cm for CZT) and good charge transport properties [ e ~ (2-5)x10-3 cm2/V]. The fabricated detectors in planar single element and Frisch collar configurations have shown very low leakage currents and high count rates for various sources, including Am-241, and Cs-137. The grown crystals have been further characterized by X-ray diffraction (XRD), infrared spectroscopy (IR), and transmission two-modulator generalized ellipsometry (2-MGE). Details of the CdTe and CZT characterization results, detector fabrication steps, and testing with radiation sources are presented. The CdTe and CZT crystals have shown high prospects for low power rating solid-state nuclear spectrometers and medical imaging devices.

Mandal, Krishna [EIC Laboratories, Inc.; Kang, Sung Hoon [EIC Laboratories, Inc.; Choi, Michael [EIC Laboratories, Inc.; Wright, Gomez W [ORNL; Jellison Jr, Gerald Earle [ORNL

2006-01-01T23:59:59.000Z

136

Software: SE2-ANL - Nuclear Engineering Division (Argonne)  

NLE Websites -- All DOE Office Websites (Extended Search)

OutLoud on Nuclear Energy Argonne Energy Showcase 2012 Software SE2-ANL (Thermal-Hydraulic Codes) Bookmark and Share Standard Code Description SE2-ANL is a modified version of...

137

GE Lighting Solutions: Order (2013-SE-4901) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Order (2013-SE-4901) GE Lighting Solutions: Order (2013-SE-4901) April 4, 2013 DOE ordered General Electric Lighting Solutions, LLC to pay a 5,360 civil penalty after finding GE...

138

Deformation potentials of CdSe quantum dots  

E-Print Network (OSTI)

a v (in eV) of zinc-blende CdSe. SEPM PW PW+d a a LAPW Expt>4: The size dependence of — a of C B M state of CdSe QDs. vDeformation potentials of CdSe quantum dots Jingbo L i and L

Li, Jingbo; Wang, Lin-Wang

2004-01-01T23:59:59.000Z

139

Local Structure of CuIn3Se5  

DOE Green Energy (OSTI)

The results of a detailed EXAFS study of the Cu-K, In-K, and Se-K edges CuIn3Se5 are reported. The Cu and In first nearest neighbor local structures were found to be almost identical to those in CuInSe2.

Chang, C. H.; Wei, S. H.; Leyarovska, N.; Johnson, J. W.; Zhang, S. B.; Stanbery, B. J.; Anderson, T. J.

2000-01-01T23:59:59.000Z

140

High contrast, CdTe portal scanner for radiation therapy  

Science Conference Proceedings (OSTI)

This paper reports on one of the most promising new technologies for improving the qualify of radiation therapy, the use of real-time systems to produce portal images. In the authors' approach, they are constructing a linear array of 256 CdTe photovoltaic detectors attached to a very compact linear scanner, all of which will be mounted in a cassette shaped package to be located under the patient table. The high stopping power of the CdTe allows a high contrast image to be made using only a single Linac pulse per line, resulting in a high contrast image in under 5 seconds.

Entine, G.; Squillante, M.R.; Hahn, R.; Cirignano, L.J.; McGann, W. (Radiation Monitoring Devices, Inc., Watertown, MA (United States)); Biggs, P.J. (Massachusetts General Hospital, Boston, MA (United States))

1992-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Feasibility of GRB with TeV gamma ray all sky monitor  

E-Print Network (OSTI)

We discuss feasibility of Gamma ray burst (GRB) with TeV gamma ray all sky monitor and discuss necessity of TeV gamma ray cherenkov all sky monitor.

S. Osone

2003-05-14T23:59:59.000Z

142

V-183: Cisco TelePresence TC and TE Bugs Let Remote Users Deny...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3: Cisco TelePresence TC and TE Bugs Let Remote Users Deny Service and Remote Adjacent Authenticated Users Gain Root Shell Access V-183: Cisco TelePresence TC and TE Bugs Let...

143

Electrophysical properties of semimagnetic solid solutions Hg 1?x Mn x Te  

Science Conference Proceedings (OSTI)

A comprehensive study of the electrophysical properties of the semimagnetic ternary solid solution Hg 1?x Mn x Te an alternative material to Hg 1?x Cd x Te is reported. The charge-carrier scattering

I. M. Nesmelova; V. N. Ryzhkov; M. I. Ibragimova; V. Yu. PetukhovKazan Physicotechnical Institute, Kazan Research Center of the Russian Academy of Sciences, Kazan?420029, Russia

2004-01-01T23:59:59.000Z

144

Micro-PL Studies of Polycrustalline CdS/CdTe Interfaces  

DOE Green Energy (OSTI)

We describe a technique of photoluminescence measurements with a resolutiion of microns. This technique is applied to examine the CdS/CdTe interface of CdTe solar cells.

Dhere, R.; Cheong, M.; Smith, S.; Albin, D.; Mascarenhas, A.; Gessert, T. A.

2000-01-01T23:59:59.000Z

145

Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)  

DOE Green Energy (OSTI)

Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

Gessert, T. A.

2010-09-01T23:59:59.000Z

146

Formation of ZnTe:Cu/Ti Contacts at High Temperature for CdS/CdTe Devices (Presentation)  

DOE Green Energy (OSTI)

The conclusions of this report are that Cu diffusion from a ZnTe:Cu contact causes good and bad things. The good (Cu in CdS < low 10{sup 18} cm{sup -3})--increase in CdTe N{sub A}-N{sub D} that leads to V{sub oc} and FF improvement. The bad (Cu in CdS > low 10{sup 18} cm{sup -3})--(1) possibly decreased of shunt resistance (?); (2) depletion width in CdTe can become too narrow for optimum current collection at J{sub MPP}; (3) donor reduction in CdS (significant FF loss in LIV); and (4) excessive Cu diffusion into CdS readily observed by red-light bias QE.

Gessert, T. A.; Asher, S.; Johnston, S.; Duda, A.; Young, M. R.; Moriarty, T.

2006-05-01T23:59:59.000Z

147

JUN TION SOLAR ELLS TE HNOLOGY READINESS LEVEL: 5 US PATENT ...  

POTENTIAL APPLI ATIONS TE HNOLOGI AL Generation of electricity for space photovoltaic applications Terrestrial high-concentration photovoltaic applications

148

TOP AT™ FOR THE ALIGNMENT & ON ENTRATION OF SOLAR TROUGHS TE ...  

POTENTIAL APPLI ATIONS Clean energy production Electric Utility Alternative energy options TE HNOLOGI AL ENEFITS Simple & easy to implement

149

Detector Performance of Ammonium-Sulfide-Passivated CdZnTe and CdMnTe Materials  

Science Conference Proceedings (OSTI)

Dark currents, including those in the surface and bulk, are the leading source of electronic noise in X-ray and gamma detectors, and are responsible for degrading a detector's energy resolution. The detector material itself determines the bulk leakage current; however, the surface leakage current is controllable by depositing appropriate passivation layers. In previous research, we demonstrated the effectiveness of surface passivation in CZT (CdZnTe) and CMT (CdMnTe) materials using ammonium sulfide and ammonium fluoride. In this research, we measured the effect of such passivation on the surface states of these materials, and on the performances of detectors made from them.

Kim, K.H.; Bolotnikov, A.E.; Camarda, G.S.; Marchini, L.; Yang, G.; Hossain, A.; Cui, Y.; Xu, L.; and James, R.B.

2010-08-01T23:59:59.000Z

150

Leader Electronics: Data Request (2010-SE-2301) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Data Request (2010-SE-2301) Data Request (2010-SE-2301) Leader Electronics: Data Request (2010-SE-2301) August 19, 2010 DOE requested test data from Leader Electronics Inc. for various models of external power supplies after Leader Electronics certified energy values that did not meet federal energy conservation standards. Leader Electronics was required to provide test data, including complete test reports, for external power supply models "NU50-2093400-I3(NU50-21090-300F)" and "MU03-F050040-AI(MU03-F1050-AKOS)." Leader Electronics: Data Request (2010-SE-2301) More Documents & Publications Leader Electronics: Noncompliance Determination (2010-SE-2301) Leader Electronics: Notice of Allowance (2010-SE-2301) Lutron Electronics: Noncompliance Determination (2012-SE-3796

151

School of Mathematical and Computing Sciences Te Kura Pangarau, Rorohiko  

E-Print Network (OSTI)

#12;School of Mathematical and Computing Sciences Te Kura Pangarau, Rorohiko Vortex geometry constant throughout the fluid flow. The velocity of the fluid flow is v = (A ^r + B ^) r . Use constant throughout the fluid flow. The velocity of the fluid flow is v = (A ^r + B ^) r . Streamlines are equiangular

Visser, Matt

152

The TeV spectrum of H1426+428  

E-Print Network (OSTI)

The BL Lac object H1426+428 was recently detected as a high energy gamma-ray source by the VERITAS collaboration (Horan et al. 2002). We have reanalyzed the 2001 portion of the data used in the detection in order to examine the spectrum of H1426+428 above 250 GeV. We find that the time-averaged spectrum agrees with a power law of the shape dF/dE = 10^(-7.31 +- 0.15(stat) +- 0.16(syst)) x E^(-3.50 +- 0.35(stat) +- 0.05(syst)) m^(-2)s^(-1)TeV^(-1) The statistical evidence from our data for emission above 2.5 TeV is 2.6 sigma. With 95% c.l., the integral flux of H1426+428 above 2.5 TeV is larger than 3% of the corresponding flux from the Crab Nebula. The spectrum is consistent with the (non-contemporaneous) measurement by Aharonian et al. (2002) both in shape and in normalization. Below 800 GeV, the data clearly favours a spectrum steeper than that of any other TeV Blazar observed so far indicating a difference in the processes involved either at the source or in the intervening space.

D. Petry; I. H. Bond; S. M. Bradbury; J. H. Buckley; D. A. Carter-Lewis; W. Cui; C. Duke; I. de la Calle Perez; A. Falcone; D. J. Fegan; S. J. Fegan; J. P. Finley; J. A. Gaidos; K. Gibbs; S. Gammell; J. Hall; T. A. Hall; A. M. Hillas; J. Holder; D. Horan; M. Jordan; M. Kertzman; D. Kieda; J. Kildea; J. Knapp; K. Kosack; F. Krennrich; S. LeBohec; P. Moriarty; D. Müller; T. N. Nagai; R. Ong; M. Page; R. Pallassini; B. Power-Mooney; J. Quinn; N. W. Reay; P. T. Reynolds; H. J. Rose; M. Schroedter; G. H. Sembroski; R. Sidwell; N. Stanton; S. P. Swordy; V. V. Vassiliev; S. P. Wakely; G. Walker; T. C. Weekes

2002-07-23T23:59:59.000Z

153

TeV Dark Matter detection by Atmospheric Cerenkov Telescopes  

E-Print Network (OSTI)

Ground based Atmospheric Cerenkov Telescopes have recently unveiled a TeV gamma-ray signal from the direction of the Galactic Centre. We examine whether these gamma-rays, observed by the VERITAS, CANGAROO-II and HESS collaborations, may arise from annihilations of dark matter particles. Emission from nearby dwarf spheroidals, such as Sagittarius, could provide a test of this scenario.

Francesc Ferrer

2005-05-19T23:59:59.000Z

154

Diffuse TeV Emission at the Galactic Centre  

E-Print Network (OSTI)

The High-Energy Stereoscopic System (HESS) has detected intense diffuse TeV emission correlated with the distribution of molecular gas along the galactic ridge at the centre of our Galaxy. Earlier HESS observations of this region had already revealed the presence of several point sources at these energies, one of them (HESS J1745-290) coincident with the supermassive black hole Sagittarius A*. It is still not entirely clear what the origin of the TeV emission is, nor even whether it is due to hadronic or leptonic interactions. It is reasonable to suppose, however, that at least for the diffuse emission, the tight correlation of the intensity distribution with the molecular gas indicates a pionic-decay process involving relativistic protons. In this paper, we explore the possible source(s) of energetic hadrons at the galactic centre, and their propagation through a turbulent medium. We conclude that though Sagittarius A* itself may be the source of cosmic rays producing the emission in HESS J1745-290, it cannot be responsible for the diffuse emission farther out. A distribution of point sources, such as pulsar wind nebulae dispersed along the galactic plane, similarly do not produce a TeV emission profile consistent with the HESS map. We conclude that only a relativistic proton distribution accelerated throughout the inter-cloud medium can account for the TeV emission profile measured with HESS.

Elizabeth Wommer; Fulvio Melia; Marco Fatuzzo

2008-04-18T23:59:59.000Z

155

Carrier dynamics and activation energy of CdTe quantum dots in a Cd{sub x}Zn{sub 1-x}Te quantum well  

SciTech Connect

We investigate the optical properties of CdTe quantum dots (QDs) in a Cd{sub 0.3}Zn{sub 0.7}Te quantum well (QW) grown on GaAs (100) substrates. Carrier dynamics of CdTe/ZnTe QDs and quantum dots-in-a-well (DWELL) structure is studied using time-resolved photoluminescence (PL) measurements, which show the longer exciton lifetime of the DWELL structure. The activation energy of the electrons confined in the DWELL structure, as obtained from the temperature-dependent PL spectra, was also higher than that of electrons confined in the CdTe/ZnTe QDs. This behavior is attributed to the better capture of carriers into QDs within the surrounding QW.

Han, W. I.; Lee, J. H.; Yu, J. S.; Choi, J. C. [Department of Physics, Yonsei University, Wonju 220-710 (Korea, Republic of); Lee, H. S. [Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

2011-12-05T23:59:59.000Z

156

A Note on TeV Cerenkov Events as Bose-Einstein Gamma Condensations  

E-Print Network (OSTI)

The idea that the TeV air showers, thought to be produced by >10 TeV gamma rays from Mrk 501, can be mimicked by coherent bunches of sub-TeV photons is reexamined, focusing on fundamental considerations. In particular, it is shown that the minimum spot size of the beam of pulsed TeV photons arriving at Earth is on the order of a few kilometers, unless a lens with certain characteristics is placed between the TeV laser and Earth. The viability of the laser production mechanism proposed by Harwit et al. (2000) is also reassessed.

Amir Levinson

2000-07-09T23:59:59.000Z

157

Novel ways of depositing ZnTe films by a solution growth technique  

DOE Green Energy (OSTI)

An electrochemical process has been successfully developed for the reproducible deposition of ZnTe and copper-doped ZnTe films suitable as transparent ohmic contacts for CdS/CdTe solar cells. The development of this method and optimization of key processing steps in the fabrication of CdS/CdTe/ZnTe:Cu devices has allowed IEC to achieve cell performance results of FF>70% and {eta} {approximately}10%. Preliminary efforts have indicated that the deposition methods investigated are potentially feasible for the formation of other II-VI compounds for use in polycrystalline thin film solar devices and should be the focus of future work.

Birkmire, R.W.; McCandless, B.E.; Yokimcus, T.A.; Mondal, A. (Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion)

1992-10-01T23:59:59.000Z

158

Comparison of CdTe and CdZnTe Detectors for Field Determination of Uranium Isotopic Enrichments  

DOE Green Energy (OSTI)

A performance comparison of a CdTe and a CdZnTe detector when exposed to uranium samples of various isotopic enrichments has been performed. These high-resolution detectors can assist in the rapid determination of uranium isotopic content of illicit material. Spectra were recorded from these room temperature semiconductor detectors with a portable multi-channel analyzer, both in the laboratory and in a field environment. Both detectors were operated below ambient temperature using the vendor supplied thermoelectric coolers. Both detectors had nominally the same active volume (18 mm3 for the CdZnTe and 25 mm3 for the CdTe detector) and resolution. Spectra of samples of known isotopic content were recorded at fixed geometries. An evaluation of potential signature g rays for the detection of enriched uranium was completed. Operational advantages and disadvantages of each detector are discussed. There is a need to improve the detection sensitivity during the interdiction of special nuclear materials (SNM) for increased homeland protection. It is essential to provide additional tools to first responders and law enforcement personnel for assessing nuclear and radiological threats.

Hofstetter, KJ

2004-01-23T23:59:59.000Z

159

Contributions to 2^nd TeV Particle Astrophysics Conference (TeV PA II) Madison Wisconsin - 28-31 August 2006  

E-Print Network (OSTI)

This collection of proceedings to the TeV PA II Conference presents some of the latest results of the IceCube Collaboration.

IceCube Collaboration; A. Achterberg

2006-11-18T23:59:59.000Z

160

Hicon: Proposed Penalty (2013-SE-1426) | Department of Energy  

NLE Websites -- All DOE Office Websites (Extended Search)

Hicon: Proposed Penalty (2013-SE-1426) Hicon: Proposed Penalty (2013-SE-1426) Hicon: Proposed Penalty (2013-SE-1426) July 8, 2013 DOE alleged in a Notice of Proposed Civil Penalty that Ningbo Hicon International Industry Company, Ltd. manufactured and distributed noncompliant freezer basic model BD-200 in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Hicon: Proposed Penalty (2013-SE-1426) More Documents & Publications Hicon: Noncompliance Determination (2013-SE-1426) Hicon: Order (2013-SE-1426) Haier: Proposed Penalty

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Philips: Proposed Penalty (2012-SE-2605) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Proposed Penalty (2012-SE-2605) Proposed Penalty (2012-SE-2605) Philips: Proposed Penalty (2012-SE-2605) November 29, 2012 DOE alleged in a Notice of Proposed Civil Penalty that Philips Lighting Electronics N. A. manufactured and distributed noncompliant fluorescent lamp ballast basic model VEL-1S40-SC in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Philips: Proposed Penalty (2012-SE-2605) More Documents & Publications Philips: Noncompliance Determination (2012-SE-2605) Philips: Order (2012-SE-2605)

162

Simkar: Proposed Penalty (2012-SE-5408) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Simkar: Proposed Penalty (2012-SE-5408) Simkar: Proposed Penalty (2012-SE-5408) Simkar: Proposed Penalty (2012-SE-5408) November 21, 2012 DOE alleged in a Notice of Proposed Civil Penalty that Simkar Corporation manufactured and distributed noncompliant probe-start and pulse-start basic model metal halide lamp fixtures in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Simkar: Proposed Penalty (2012-SE-5408) More Documents & Publications Simkar: Noncompliance Determination (2012-SE-5408) Simkar: Order (2012-SE-5408)

163

Central Moloney: Proposed Penalty (2013-SE-4702) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Proposed Penalty (2013-SE-4702) Proposed Penalty (2013-SE-4702) Central Moloney: Proposed Penalty (2013-SE-4702) March 20, 2013 DOE alleged in a Notice of Proposed Civil Penalty that Central Moloney, Inc. manufactured and distributed a variety of noncompliant liquid-immersed distribution transformers in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Central Moloney: Proposed Penalty (2013-SE-4702) More Documents & Publications Central Moloney: Noncompliance Determination (2013-SE-4702) Central Moloney: Order (2013-SE-4702)

164

CNA: Proposed Penalty (2013-SE-1430) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

CNA: Proposed Penalty (2013-SE-1430) CNA: Proposed Penalty (2013-SE-1430) CNA: Proposed Penalty (2013-SE-1430) September 24, 2013 DOE alleged in a Notice of Proposed Civil Penalty that CNA International, Inc., d/b/a MC Appliance Corp. privately labeled and distributed noncompliant freezer Magic Chef model number HMCF7W in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. CNA: Proposed Penalty (2013-SE-1430) More Documents & Publications CNA: Noncompliance Determination (2013-SE-1430) CNA: Compromise Agreement (2013-SE-1430)

165

Se-based Positive Electrode Material for Rechargeable Battery ...  

Science Conference Proceedings (OSTI)

This series of matrials could be used in both Li and Na battery system. It is found that Se-containing materials showed better electrochemical performace in terms

166

ASKO Appliances: Compliance Determination (2010-SE-0601) | Department...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

(2010-SE-0601) Septemer 8, 2010 DOE tested four units of the model D5122XXLB dishwasher manufactured by ASKO Appliances, Inc. Applying statistical analysis, DOE found that...

167

Lutron Electronics: Proposed Penalty (2012-SE-3796) | Department...  

NLE Websites -- All DOE Office Websites (Extended Search)

(2012-SE-3796) May 2, 2013 DOE alleged in a Notice of Proposed Civil Penalty that Lutron Electronics Co., Inc. manufactured and distributed noncompliant class A external power...

168

Enhancement of the steady state minority carrier lifetime in HgCdTe photodiode using ECR plasma hydrogenation  

Science Conference Proceedings (OSTI)

Keywords: HgCdTe, diffusion length, field effect transistor, hydrogenation, lifetime, mobility, photodiode

Han Jung; Hee Chul Lee; Choong-Ki Kim

1996-08-01T23:59:59.000Z

169

APS/DPP 111207-se 1 University Fusion Association Meeting  

E-Print Network (OSTI)

greater interaction between the Office of Science researchers and the NNSA scientists and provide greater has been included in the NNSA program. #12;APS/DPP 111207-se 6 FY2008 CR · The Department is operating Interest May 2007 SC/NNSA Joint Program in HEDLP #12;APS/DPP 111207-se 12 HEDP-Research Topics & Related

170

High-Efficiency CdTe and CIGS Thin-Film Solar Cells: Highlights and Challenges; Preprint  

DOE Green Energy (OSTI)

Thin-film photovoltaic (PV) modules of CdTe and Cu(In,Ga)Se2 (CIGS) have the potential to reach cost-effective PV-generated electricity. These technologies have transitioned from the laboratory to the market place. Pilot production and first-time manufacturing are ramping up to higher capacity and enjoying a flood of venture-capital funding. CIGS solar cells and modules have achieved 19.5% and 13% efficiencies, respectively. Likewise, CdTe cells and modules have reached 16.5% and 10.2% efficiencies, respectively. Even higher efficiencies from the laboratory and from the manufacturing line are only a matter of time. Manufacturing-line yield continues to improve and is surpassing 85%. Long-term stability has been demonstrated for both technologies; however, some failures in the field have also been observed, emphasizing the critical need for understanding degradation mechanisms and packaging options. The long-term potential of the two technologies require R&D emphasis on science and engineering-based challenges to find solutions to achieve targeted cost-effective module performance, and in-field durability. Some of the challenges are common to both, e.g., in-situ process control and diagnostics, thinner absorber, understanding degradation mechanisms, protection from water vapor, and innovation in high-speed processing and module design. Other topics are specific to the technology, such as lower-cost and fast-deposition processes for CIGS, and improved back contact and voltage for CdTe devices.

Noufi, R.; Zweibel, K.

2006-05-01T23:59:59.000Z

171

Mackle Company: Proposed Penalty (2010-SE-0106) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Mackle Company: Proposed Penalty (2010-SE-0106) Mackle Company: Proposed Penalty (2010-SE-0106) Mackle Company: Proposed Penalty (2010-SE-0106) June 14, 2010 DOE alleged in a Notice of Proposed Civil Penalty that The Mackle Company, Inc., sold and/or distributed noncompliant refrigerators, refrigerator-freezers, and freezers in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. The Mackle Company: Proposed Penalty (2010-SE-0106) More Documents & Publications Mackle Company: Proposed Penalty (2011-CE-2102) Mackle Company: Order (2010-SE-0106)

172

Neptun Light: Proposed Penalty (2012-SE-3504) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Neptun Light: Proposed Penalty (2012-SE-3504) Neptun Light: Proposed Penalty (2012-SE-3504) Neptun Light: Proposed Penalty (2012-SE-3504) May 2, 2013 DOE alleged in a Notice of Proposed Civil Penalty that Neptun Light, Inc. failed to certify a variety of medium base compact fluorescent lamps as compliant with the applicable energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Neptun Light: Proposed Penalty (2012-SE-3504) More Documents & Publications Neptun Light: Order (2012-SE-3504) Excellence Opto: Proposed Penalty (2013-CE-49002)

173

Teddico: Proposed Penalty (2012-SE-5409) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Proposed Penalty (2012-SE-5409) Proposed Penalty (2012-SE-5409) Teddico: Proposed Penalty (2012-SE-5409) November 21, 2012 DOE alleged in a Notice of Proposed Civil Penalty that The Electrical Design, Development and Implementation Company d/b/a Teddico manufactured and distributed noncompliant metal halide lamp fixtures with magnetic probe-start ballasts in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Teddico: Proposed Penalty (2012-SE-5409) More Documents & Publications Teddico: Noncompliance Determination (2012-SE-5409)

174

Mackle Company: Proposed Penalty (2010-SE-0106) | Department of Energy  

NLE Websites -- All DOE Office Websites (Extended Search)

Mackle Company: Proposed Penalty (2010-SE-0106) Mackle Company: Proposed Penalty (2010-SE-0106) Mackle Company: Proposed Penalty (2010-SE-0106) June 14, 2010 DOE alleged in a Notice of Proposed Civil Penalty that The Mackle Company, Inc., sold and/or distributed noncompliant refrigerators, refrigerator-freezers, and freezers in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. The Mackle Company: Proposed Penalty (2010-SE-0106) More Documents & Publications Mackle Company: Proposed Penalty (2011-CE-2102) Mackle Company: Order (2010-SE-0106)

175

Goodman Manufacturing: Proposed Penalty (2011-SE-4301) | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Proposed Penalty (2011-SE-4301) Proposed Penalty (2011-SE-4301) Goodman Manufacturing: Proposed Penalty (2011-SE-4301) December 2, 2011 DOE alleged in a Notice of Proposed Civil Penalty that Goodman Manufacturing manufactured and distributed noncompliant basic model CPC180* commercial package air conditioners in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Goodman Manufacturing: Proposed Penalty (2011-SE-4301) More Documents & Publications Goodman Manufacturing: Noncompliance Determination (2011-SE-4301)

176

Pax Global: Noncompliance Determination (2013-SE-1413) | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Pax Global: Noncompliance Determination (2013-SE-1413) Pax Global: Noncompliance Determination (2013-SE-1413) Pax Global: Noncompliance Determination (2013-SE-1413) April 2, 2013 DOE issued a Notice of Noncompliance Determination to Pax Global, Inc. finding that freezer basic models (1) Crosley CCF51; (2) Crosley CCF69; (3) Crosley CCF106; and (4) Daewoo DCF-106W do not comport with the energy conservation standards. DOE determined the products were noncompliant based on DOE testing. Pax Global must immediately notify each person (or company) to whom Pax Global distributed the noncompliant products that the products do not meet Federal standards. Pax Global: Noncompliance Determination (2013-SE-1413) More Documents & Publications Pax Global: Compromise Agreement (2013-SE-1413) Daewoo: Proposed Penalty (2010-CE-0410)

177

Thermoelectric properties of n-type PbSe revisited  

Science Conference Proceedings (OSTI)

It was recently predicted \\cite{parker} and experimentally confirmed \\cite{sny_PbSe} that $p$-type PbSe would be a good thermoelectric material. Recent experimental work \\cite{pers2} now suggests that $n$-type PbSe can also be a good thermoelectric material. We now re-examine the thermoelectric performance of PbSe with a revised approximation which improves band gap accuracy. We now find that $n$-type PbSe {\\it can} be a high performance material, with thermopowers as high in magnitude as 250 $\\mu$V/K at 1000 K and 300 $\\mu$V/K at 800 K. Optimal 1000 K $n$-type doping ranges are between 2 $\\times 10^{19}$cm$^{-3}$ and 8 $\\times 10^{19}$cm$^{-3}$, while at 800 K the corresponding range is from 7 $\\times$10$^{18}$ to 4 $\\times $10$^{19}$ cm$^{-3}$.

Parker, David S [ORNL; Singh, David J [ORNL; Ren, Zhifeng [Boston College, Chestnut Hill; Zhang, Qinyong [Xihua University

2012-01-01T23:59:59.000Z

178

TeV scale dark matter and electroweak radiative corrections  

SciTech Connect

Recent anomalies in cosmic rays data, namely, from the PAMELA Collaboration, can be interpreted in terms of TeV scale decaying/annihilating dark matter. We analyze the impact of radiative corrections coming from the electroweak sector of the standard model on the spectrum of the final products at the interaction point. As an example, we consider virtual one loop corrections and real gauge bosons emission in the case of a very heavy vector boson annihilating into fermions. We find electroweak corrections that are relevant, but not as big as sometimes found in the literature; we relate this mismatch to the issue of gauge invariance. At scales much higher than the symmetry breaking scale, one loop electroweak effects are so big that eventually higher orders/resummations have to be considered: we advocate for the inclusion of these effects in parton shower Monte Carlo models aiming at the description of TeV scale physics.

Ciafaloni, Paolo; Urbano, Alfredo [INFN - Sezione di Lecce and Universita del Salento, Via per Arnesano, I-73100 Lecce (Italy)

2010-08-15T23:59:59.000Z

179

High-efficiency large-area CdTe panels  

DOE Green Energy (OSTI)

The objective of this three year effort has been to develop an improved materials technology and fabrication process for limited volume production of 1 ft{sup 2} and 4 ft{sup 2} CdS/CdTe photovoltaic modules. The module stability objective by the end of this three year subcontract was to develop techniques to provide ten year life exploration with no greater than 10% degradation. In order to achieve these efficiency and stability objectives, the research program has been separated into tasks including: (1) analysis and characterization of CdS/CdTe Devices; (2) performance optimization on small cells; (3) encapsulation and stability testing; and (4) module efficiency optimization. 27 refs., 18 figs., 3 tabs.

Albright, S.P.; Chamberlin, R.R.; Jordan, J.F. (Photon Energy, Inc., El Paso, TX (USA))

1990-11-01T23:59:59.000Z

180

Charge transport properties of CdMnTe radiation detectors  

Science Conference Proceedings (OSTI)

Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature.

Kim K.; Rafiel, R.; Boardman, M.; Reinhard, I.; Sarbutt, A.; Watt, G.; Watt, C.; Uxa, S.; Prokopovich, D.A.; Belas, E.; Bolotnikov, A.E.; James, R.B.

2012-04-11T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Sub-barrier fusion enhancement with radioactive 134Te  

E-Print Network (OSTI)

The fusion cross sections of radioactive $^{134}$Te + $^{40}$Ca were measured at energies above and below the Coulomb barrier. The evaporation residues produced in the reaction were detected in a zero-degree ionization chamber providing high efficiency for inverse kinematics. Both coupled-channel calculations and comparison with similar Sn+Ca systems indicate an increased sub-barrier fusion probability that is correlated with the presence of positive Q-value neutron transfer channels. In comparison, the measured fusion excitation functions of $^{130}$Te + $^{58,64}$Ni, which have positive Q-value neutron transfer channels, were accurately reproduced by coupled-channel calculations including only inelastic excitations. The results demonstrate that the coupling of transfer channels can lead to enhanced sub-barrier fusion but this is not directly correlated with positive Q-value neutron transfer channels in all cases.

Z. Kohley; J. F. Liang; D. Shapira; C. J. Gross; R. L. Varner; J. M. Allmond; J. J. Kolata; P. E. Mueller; A. Roberts

2013-06-28T23:59:59.000Z

182

Sub-barrier fusion enhancement with radioactive 134Te  

Science Conference Proceedings (OSTI)

The fusion cross sections of radioactive 134Te + 40Ca were measured at energies above and below the Coulomb barrier. The evaporation residues produced in the reaction were detected in a zero-degree ionization chamber providing high efficiency for inverse kinematics. Both coupled-channel calculations and comparison with similar Sn + Ca systems indicate an increased sub-barrier fusion probability that is correlated with the presence of positive Q-value neutron transfer channels. In comparison, the measured fusion excitation functions of 130Te + 58,64Ni, which have positive Q-value neutron transfer channels, were accurately reproduced by coupled-channel calculations including only inelastic excitations. The results demonstrate that the coupling of transfer channels can lead to enhanced sub-barrier fusion but this is not directly correlated with positive Q-value neutron transfer channels in all cases.

Kohley, Zachary W [ORNL; Liang, J Felix [ORNL; Shapira, Dan [ORNL; Gross, Carl J [ORNL; Varner Jr, Robert L [ORNL; Allmond, James M [ORNL; Kolata, Jim J [University of Notre Dame, IN; Mueller, Paul Edward [ORNL; Roberts, Amy [University of Notre Dame, IN

2013-01-01T23:59:59.000Z

183

MHK Projects/TE4 | Open Energy Information  

Open Energy Info (EERE)

TE4 TE4 < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":5,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"500px","height":"350px","centre":false,"title":"","label":"","icon":"File:Aquamarine-marker.png","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":52.3247,"lon":1.68765,"alt":0,"address":"","icon":"http:\/\/prod-http-80-800498448.us-east-1.elb.amazonaws.com\/w\/images\/7\/74\/Aquamarine-marker.png","group":"","inlineLabel":"","visitedicon":""}]}

184

Formation and Characterization of CdSxTe1-x Alloys Prepared from Thin Film Couples of CdS and CdTe: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the alloying between CdS and CdTe at the CdS/CdTe interface is a function of the growth temperature and post-deposition CdCl2 heat treatment (HT). In devices prepared by different techniques, Te-rich CdSxTe1-x alloys with x= 0.04 to 0.08 have been identified. We present our work on thin-film couples of CdS and CdTe, which can withstand higher level of CdCl2 treatment without the adhesion problems typically encountered in the regular device structure. CdS films with a thickness of {approx}100 nm were deposited by chemical-bath deposition on glass/SnO2 substrates, and CdTe films with a thickness of 300 and 800 nm were deposited by close-spaced sublimation. The samples were treated in the presence of vapor CdCl2 at 400-450 C for 5 min. X-ray diffraction and optical analysis of the samples showed that S content in the CdSxTe1-x alloy increased systematically with the CdCl2 HT temperature. CdSxTe1-x alloy with x= 0.14 was identified for the samples treated at 4 30C, which is much higher than expected from the miscibility gap at 430C.

Dhere, R.; Wu, X.; Albin, D.; Perkins, C.; Moutinho, H.; Gessert, T.

2002-05-01T23:59:59.000Z

185

Flat beams in a 50 TeV hadron collider  

SciTech Connect

The basic beam dynamics of a next generation 50 x 50 TeV hadron collider based on a high field magnet approach have been outlined over the past several years. Radiation damping not only produces small emittances, but also flat beams, just as in electron machines. Based on {open_quotes}Snowmass 96{close_quotes} parameters, we investigate the issues associated with flat beams in very high energy hadron colliders.

Peggs, S.; Harrison, M.; Pilat, F.; Syphers, M.

1997-08-01T23:59:59.000Z

186

Mr. John E. Kieling, Chief Hazardous Was te Bureau  

NLE Websites -- All DOE Office Websites (Extended Search)

John E. Kieling, Chief John E. Kieling, Chief Hazardous Was te Bureau Depa rtment of Energy Carlsbad Field Office P. O. Box 3090 Carlsbad , New Mexico 88221 NOV 0 5 2013 New Mexico Environment Department 2905 Rodeo Park Drive East. Building 1 Santa Fe, New Mexico 87505-6303 Subject: Panel 6 Closure and Final Waste Emplacement Notifications Dear Mr. Kieling : The purpose of this leiter is 1 0 notify th e New Mexico Environment Department (NMEO) that the

187

ELUTIONS Inc formerly TeCom | Open Energy Information  

Open Energy Info (EERE)

ELUTIONS Inc formerly TeCom ELUTIONS Inc formerly TeCom Jump to: navigation, search Name ELUTIONS Inc (formerly TeCom) Place Tampa, Florida Zip 33605 Sector Efficiency Product Tampa-based wireless enterprise automation solutions firm. Elutions provides an Active Energy Management service allowing users to increase efficiency by monitoring, forecasting and analyzing utility resource consumption. Coordinates 27.94653°, -82.459269° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":27.94653,"lon":-82.459269,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

188

Enhanced photoluminescence from free-standing microstructures fabricated on MBE grown PbSe-PbSrSe MQW structure  

Science Conference Proceedings (OSTI)

Fabrication of microrods from multi-quantum well (MQW) PbSe-PbSrSe structure grown in molecular beam epitaxy (MBE) followed by its morphological as well as optical characterizations are described. Pulsed PL intensity is increased by 64 times per unit ... Keywords: MBE, MQW microrod, MQW microtube, Photoluminescence, SEM

S. Mukherjee; S. Jain; F. Zhao; J. P. Kar; D. Li; Z. Shi

2008-04-01T23:59:59.000Z

189

Bismuth-induced deep levels and carrier compensation in CdTe  

Science Conference Proceedings (OSTI)

First-principles calculations show that Bi on Cd site in CdTe can be either a donor, Bi_Cd+, or an acceptor, Bi_Cd- , depending on the Fermi level. The can bind a substitutional O (O_Te) with large binding energy of 1.40 eV. The calculated (0/-) transition level for B_Cd- - O_Te complex is in good agreement with the observed deep hole trapping level. Bi can also substitute Te to form an acceptor. The amphoteric nature of Bi in CdTe results in the pinning of the Fermi level and the high resistivity. We also discuss the origin of p-type CdTe at high Bi doping level.

Du, Mao-Hua [ORNL

2008-01-01T23:59:59.000Z

190

Nodes in the gap function of LaFePO, the gap function of the Fe(Se,Te) systems, and the STM signature of the s(+/-) pairing  

E-Print Network (OSTI)

We reiterate, in more details, our previous proposal of using quasiparticle interference to determine the pairing form factor in iron-based superconductors. We also present our functional renormalization group (FRG) results ...

Wang, Fa

191

Midea: Noncompliance Determination (2010-SE-0110) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0-SE-0110) 0-SE-0110) Midea: Noncompliance Determination (2010-SE-0110) October 5, 2011 DOE issued a Notice of Noncompliance Determination to Midea America Corporation finding that basic model number HS-390C, a chest freezer, does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Midea must immediately notify each person (or company) to whom Midea distributed the noncompliant product that the product does not meet Federal standards. In addition, Midea must provide to DOE documents and records showing the number of units Midea distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties. Midea: Noncompliance Determination (2010-SE-0110) More Documents & Publications

192

Fuzhou Sunlight Lighting: Notice of Allowance (2010-SE-1402) | Department  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Fuzhou Sunlight Lighting: Notice of Allowance (2010-SE-1402) Fuzhou Sunlight Lighting: Notice of Allowance (2010-SE-1402) Fuzhou Sunlight Lighting: Notice of Allowance (2010-SE-1402) August 10, 2010 DOE issued a Notice of Allowance to Resume Distribution, authorizing Fuzhou Sunlight Lighting Electrical Appliance Company, Ltd. to resume distribution of eleven models of lamps. DOE had previously found certain Fuzhou products did not comport with the applicable energy conservation standards based on Fuzhou's testing. After determining that the original testing was not performed in accordance with DOE procedures, Fuzhou Sunlight provided new test data to DOE demonstrating that eleven models meet the applicable energy conservation standard when tested in accordance with DOE test procedures. Fuzhou Sunlight Lighting: Notice of Allowance (2010-SE-1402)

193

Grainger: Noncompliance Determination (2013-SE-1411) | Department of Energy  

NLE Websites -- All DOE Office Websites (Extended Search)

Noncompliance Determination (2013-SE-1411) Noncompliance Determination (2013-SE-1411) Grainger: Noncompliance Determination (2013-SE-1411) April 29, 2013 DOE issued a Notice of Noncompliance Determination to Grainger International Inc. finding that freezer models, privately labeled as the Dayton 5NTX4, the Dayton 5NTX5, and the Dayton 5NTX6 do not comport with the energy conservation standards. Grainger must immediately notify each person (or company) to whom Grainger distributed the noncompliant products that the products do not meet Federal standards. In addition, Grainger must provide to DOE documents and records showing the number of units Grainger distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties. Grainger: Noncompliance Determination (2013-SE-1411)

194

Lattice vibrations of pure and doped GaSe  

Science Conference Proceedings (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

195

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) March 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Lighting Solutions: Proposed Penalty (2013-SE-4901) More Documents & Publications Act One: NPCP (2013-CE-49001) Excellence Opto: Proposed Penalty (2013-CE-49002)

196

Thermo Products: Proposed Penalty (2011-SE-1603) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Thermo Products: Proposed Penalty (2011-SE-1603) Thermo Products: Proposed Penalty (2011-SE-1603) Thermo Products: Proposed Penalty (2011-SE-1603) September 28, 2011 DOE issued this Notice of Proposed Civil Penalty Notice to Thermo Products, LLC, alleging that the company certified several models of residential air conditioning heat pumps without performing testing required by DOE regulations. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Thermo Products: Proposed Penalty (2011-SE-1603) More Documents & Publications

197

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Proposed Penalty (2013-SE-4901) Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) March 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Lighting Solutions: Proposed Penalty (2013-SE-4901) More Documents & Publications Watermark: Proposed Penalty (2011-SW-2908) Act One: NPCP (2013-CE-49001)

198

Engineered Products: Proposed Penalty (2012-SE-5401) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Proposed Penalty (2012-SE-5401) Proposed Penalty (2012-SE-5401) Engineered Products: Proposed Penalty (2012-SE-5401) July 19, 2012 DOE alleged in a Notice of Proposed Civil Penalty that Engineered Products Company manufactured/privately-labeled and distributed a number of units of noncompliant basic model 15701, a metal halide lamp fixture with a magnetic probe-start ballast in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Engineered Products: Proposed Penalty (2012-SE-5401) More Documents & Publications

199

Hydac: Noncompliance Determination (2012-SE-4107) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Noncompliance Determination (2012-SE-4107) Noncompliance Determination (2012-SE-4107) Hydac: Noncompliance Determination (2012-SE-4107) November 19, 2012 DOE issued a Notice of Noncompliance Determination to Hydac Technology Corporation finding that a variety of electric motor basic models do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. Hydac must immediately notify each person (or company) to whom Hydac distributed the noncompliant products that the products do not meet Federal standards. In addition, Hydac must provide to DOE documents and records showing the number of units Hydac distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties. Hydac: Noncompliance Determination (2012-SE-4107)

200

Haier: Noncompliance Determination (2011-SE-1428) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Haier: Noncompliance Determination (2011-SE-1428) Haier: Noncompliance Determination (2011-SE-1428) Haier: Noncompliance Determination (2011-SE-1428) April 23, 2013 DOE issued a Notice of Noncompliance Determination to Haier America Trading, LLC finding that Haier model HMCM106EA, a freezer, does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Haier must immediately notify each person (or company) to whom Haier distributed the noncompliant products that the product does not meet Federal standards. In addition, Haier must provide to DOE documents and records showing the number of units Haier distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties. Haier: Noncompliance Determination (2011-SE-1428)

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

ET Industries: Noncompliance Determination (2012-SE-2902) | Department of  

NLE Websites -- All DOE Office Websites (Extended Search)

Noncompliance Determination (2012-SE-2902) Noncompliance Determination (2012-SE-2902) ET Industries: Noncompliance Determination (2012-SE-2902) May 24, 2013 DOE issued a Notice of Noncompliance Determination to ET Industries, Inc. finding that showerhead basic model TH-1 does not comport with the water conservation standards. DOE determined the product was noncompliant based on DOE testing. ET Industries must immediately notify each person (or company) to whom ET Industries distributed the noncompliant products that the product does not meet Federal standards. In addition, ET Industries must provide to DOE documents and records showing the number of units ET Industries distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties. ET Industries: Noncompliance Determination (2012-SE-2902)

202

Royal Pacific: Proposed Penalty (2013-SE-33004) | Department of Energy  

NLE Websites -- All DOE Office Websites (Extended Search)

Proposed Penalty (2013-SE-33004) Proposed Penalty (2013-SE-33004) Royal Pacific: Proposed Penalty (2013-SE-33004) July 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that Royal Pacific, Ltd. failed to certify ceiling fans, ceiling fan light kits, medium base compact fluorescent lamps, and illuminated exit signs as compliant with the applicable energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Royal Pacific: Proposed Penalty (2013-SE-33004) More Documents & Publications

203

Aspen: Noncompliance Determination (2010-SE-0305) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0-SE-0305) 0-SE-0305) Aspen: Noncompliance Determination (2010-SE-0305) May 28, 2010 DOE issued a Notice of Noncompliance Determination to Aspen Manufacturing finding that a variety of basic models of split-system air conditioning heat pumps do not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Aspen must immediately notify each person (or company) to whom Aspen distributed the noncompliant products that the product does not meet Federal standards. In addition, Aspen must provide to DOE documents and records showing the number of units Aspen distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties. Aspen: Noncompliance Determination (2010-SE-0305)

204

Fuzhou Sunlight Lighting: Notice of Allowance (2010-SE-1402) | Department  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Sunlight Lighting: Notice of Allowance (2010-SE-1402) Sunlight Lighting: Notice of Allowance (2010-SE-1402) Fuzhou Sunlight Lighting: Notice of Allowance (2010-SE-1402) October 8, 2010 DOE issued a Notice of Allowance to Resume Distribution, authorizing Fuzhou Sunlight Lighting Electrical Appliance Company, Ltd. to resume distribution of one model of lamp. DOE had previously found certain Fuzhou products did not comport with the applicable energy conservation standards based on Fuzhou's testing. After determining that the original testing was not performed in accordance with DOE procedures, Fuzhou Sunlight provided new test data to DOE demonstrating that one model meets the applicable energy conservation standard when tested in accordance with DOE test procedures. Fuzhou Sunlight Lighting: Notice of Allowance (2010-SE-1402)

205

Campus Security Report 1 Campus seCurity  

E-Print Network (OSTI)

Campus Security Report 1 Campus seCurity and Fire saFety report UC Santa Cruz 2010 #12;Campus Security Report 2 UC Santa Cruz Geography ........................................................ 8 Security and Access to Campus Buildings and Grounds ........................................ 8

Wilmers, Chris

206

The Effect of Structural Vacancies on the Thermoelectric Properties of (Cu2Te)1-x(Ga2Te3)x  

SciTech Connect

We have studied the effects of structural vacancies on the thermoelectric properties of the ternary compounds (Cu2Te)1-x(Ga2Te3)x (x = 0.5, 0.55, 0.571, 0.6, 0.625, 0.667 and 0.75), which are solid solutions found in the pseudo-binary phase diagram for Cu2Te and Ga2Te3. This system possesses tunable structural vacancy concentrations. The x= 0.5 phase, CuGaTe2, is nominally devoid of structural vacancies, while the rest of the compounds contain varying amounts of these features, and the volume density of vacancies increases with Ga2Te3 content. The sample with x = 0.5, 0.55, 0.571, 0.6, 0.625 crystallize in the chalcopyrite structure while the x = 0.667 and 0.75 adopt the Ga2Te3 defect zinc blende structure. Strong scattering of heat carrying phonons by structural defects, leads to the reduction of thermal conductivity, which is beneficial to the thermoelectric performance of materials. On the other hand, these defects also scatter charge carriers and reduce the electrical conductivity. All the samples investigated are p-type semiconductors as inferred by the signs of their respective Hall (RH) and Seebeck (S) coefficients. The structural vacancies were found to scatter phonons strongly, while a combination of increased carrier concentration, and vacancies decreases the Hall mobility ( H), degrading the overall thermoelectric performance. The room temperature H drops from 90 cm2/V s for CuGaTe2 to 13 cm2/V s in Cu9Ga11Te21 and 4.6 cm2/V s in CuGa3Te5. The low temperature thermal conductivity decreases significantly with higher Ga2Te3 concentrations (higher vacancy concentration) due to increased point defect scattering which dominate thermal resistance terms. At high temperatures, the dependence of thermal conductivity on the Ga2Te3 content is less significant. The presence of strong Umklapp scattering leads to low thermal conductivity at high temperatures for all samples investigated. The highest ZT among the samples in this study was found for the defect-free CuGaTe2 with ZT ~ 1.0 at 840K.

Ye, Zuxin [GM Research and Development Center; Cho, Jung Y [GM R& D and Planning, Warren, Michigan; Tessema, Misle [GM Research and Development Center; Salvador, James R. [GM R& D and Planning, Warren, Michigan; Waldo, Richard [GM R& D and Planning, Warren, Michigan; Wang, Hsin [ORNL; Cai, Wei [ORNL

2013-01-01T23:59:59.000Z

207

High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011  

DOE Green Energy (OSTI)

The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently showed state-of-the-art electron mobilities and good hole mobilities; bulk minority carrier recombination lifetimes of unintentionally p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be consistently of order 100 ns or longer; desired n- and p-doping levels were achieved; solar cell series specific resistances <10 ?-cm2 were achieved; A single-junction solar cell having a state-of-the-art value of Voc and a unverified 16.4% efficiency was fabricated from CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a tandem cell with a Si bottom junction.

Carmody, M.; Gilmore, A.

2011-05-01T23:59:59.000Z

208

Novel CdTe Cell Fabrication Process with Potential for Low Cost and High Throughput  

DOE Green Energy (OSTI)

There are several production disadvantages inherent in the conventional SnO(2)/CdS/CdTe manufacturing processes. In this paper, we report a novel manufacturing process for fabrication of polycrystalline Cd(2)SnO(4)/Zn(2)/SnO(4)/CdS/CdTe thin-film solar cells that yielded a CdS/CdTe device with an NREL-confirmed efficiency of 14.0%.

Wu, X.; Sheldon, P.

2000-01-01T23:59:59.000Z

209

Interplay between Superconductivity and Magnetism in Fe1-xPdxTe  

Science Conference Proceedings (OSTI)

The love/hate relationship between superconductivity and magnetic ordering has fascinated the condensed matter physics community for a century. In the early days, magnetic impurities doped into a superconductor were found to quickly suppress superconductivity. Later, a variety of systems, such as cuprates, heavy fermions and Fe pnictides, show superconductivity in a narrow region near the border to antiferromagnetism (AFM) as a function of pressure or doping. On the other hand, the coexistence of superconductivity and ferromagnetic (FM) or AFM ordering is found in a few compounds (RRh4B4 (R = Nd, Sm, Tm, Er), R'Mo6X8 (R' = Tb, Dy, Er, Ho, and X = S, Se), UMGe (M = Ge, Rh, Co), CeCoIn5, EuFe2(As1-xPx)2 etc.), providing evidence for their compatibility. Here, we present a third situation, where superconductivity coexists with FM and near the border of AFM in Fe1-xPdxTe. The doping of Pd for Fe gradually suppresses the first-order AFM ordering at temperature TN/S, and turns into short-range (SR) AFM correlation with a characteristic peak in magnetic susceptibility at T'N. Superconductivity sets in when T'N reaches zero. However, there is a gigantic ferromagnetic dome imposed in the superconducting-AFM (SR) crossover regime. Such a system is ideal for studying the interplay between superconductivity and two types of magnetic interactions (FM and AFM).

Karki, A B [Louisiana State University; Garlea, Vasile O [ORNL; Custelcean, Radu [ORNL; Stadler, S. [Louisiana State University; Plummer, E. W. [Louisiana State University; Jin, Rongying [Louisiana State University

2013-01-01T23:59:59.000Z

210

Electrical properties of PbTe single crystals with excess tellurium  

Science Conference Proceedings (OSTI)

The effects of excess (up to 0.1 at %) Te atoms and heat treatment at 473 and 573 K for 120 h on the conductivity {sigma}, thermopower {alpha}, and Hall coefficient R of PbTe single crystals are studied. It is shown that excess Te atoms and annealing strongly affect the values and character of the temperature dependences of these parameters and the signs of {alpha} and R at low temperatures, which is caused by the acceptor effect of these atoms and the formation of antisite defects due to localization of Te in vacancies of the lead sublattice upon annealing.

Bagiyeva, G. Z., E-mail: bagieva-gjulandam@rambler.ru; Mustafayev, N. B.; Abdinova, G. Dj.; Abdinov, D. Sh. [National Academy of Sciences of Azerbaijan, Abdullaev Institute of Physics (Azerbaijan)

2011-11-15T23:59:59.000Z

211

Simulated Performance of the GammaTracker CdZnTe Handheld ...  

Simulated Performance of the GammaTracker CdZnTe Handheld Radioisotope Identifier Carolyn E. Seifert, Member, IEEE, Mitchell J. Myjak, Member, IEEE, ...

212

Mechanical Properties of Thermoelectric Materials PbTe-PbS and ...  

Science Conference Proceedings (OSTI)

... thermoelectric (TE) materials for a variety of applications, including the conversion of waste heat energy into electricity. LAST (Lead-Antimony-Silver-

213

Electrodeposition of PbTe Thermoelectric Materials in NaOH Solutions  

Science Conference Proceedings (OSTI)

Dissolution Kinetics of Steelmaking Slag and Its Promotion for the Growth of Algae · Electrodeposition of PbTe Thermoelectric Materials in NaOH Solutions.

214

Characterization and Analysis of CIGS and CdTE Solar Cells: December 2004 - July 2008  

DOE Green Energy (OSTI)

The work reported here embodies a device-physics approach based on careful measurement and interpretation of data from CIGS and CdTe solar cells.

Sites, J. R.

2009-01-01T23:59:59.000Z

215

NREL Determines Long-Lived Carriers and Differences in CdTe Superstrat...  

NLE Websites -- All DOE Office Websites (Extended Search)

"Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices." Proc. 37 th IEEE Photovoltaic Specialists Conference, 19-24 June 2011,...

216

Review of Photovoltaic Energy Production Using CdTe Thin-Film Modules: Extended Abstract Preprint  

DOE Green Energy (OSTI)

CdTe has near-optimum bandgap, excellent deposition traits, and leads other technologies in commercial PV module production volume. Better understanding materials properties will accelerate deployment.

Gessert, T. A.

2008-09-01T23:59:59.000Z

217

Characterization of Heterogeneities in Detector-Grade CdZnTe Crystals  

Science Conference Proceedings (OSTI)

Synthetic Cd{sub 1-x}ZnxTe or 'CZT' crystals are highly suitable for g-spectrometers operating at room temperature. Secondary phases (SP) within CZT, presumed to be Te metal, have detrimental impacts on the charge collection efficiency of fabricated device. Using analytical techniques rather than arbitrary theoretical definitions, we identify two SP morphologies: (i) many void, 20-{mu}m 'negative' crystals with 65-nm nanoparticle residues of Si, Cd, Zn, and Te and (ii) 20-{mu}m hexagonal-shaped bodies, which are composites of metallic Te layers with cores of amorphous and polycrystalline CZT material that surround the voids.

Duff, M.; Hunter, D; Burger, A; Groza, M; Buliga, V; Bradley, J; Graham, G; Dai, Z; Lanzirotti, A; et. al.

2009-01-01T23:59:59.000Z

218

First-principles study of Se-intercalated graphite  

DOE Green Energy (OSTI)

Se-intercalated graphite compounds (Se-GICs) are considered as promising candidates for room-temperature thermoelectric cooling devices. Here the authors analyze the crystallographic structure and electronic properties of these materials within the framework of density-functional theory. First, the Adaptive-Coordinate Real-space Electronic Structure (ACRES) code is used to determine the stable structure of a representative stage-2 Se-GIC by relaxing atomic positions. The stable configuration is found to be a pendant-type structure, in which each selenium is bonded covalently to two atoms within the same carbon layer, causing a local distortion of the in-plane conjugation of the graphite. Then, they use the full potential linearized augmented plane wave (FP-LAPW) method to calculate the electronic band structure of the material and discuss its properties. Near the Fermi energy E{sub F}, there are wide bands originating from the host graphitic electronic structure and a few very narrow bands mainly of Se 4p character. The latter bands contribute to high peaks in the density of states close to E{sub F}. They show that this feature, although typical of many good thermoelectrics, does not necessarily imply high thermopower in the case of Se-GICs.

BARTKOWIAK,M.; MODINE,NORMAND A.; SOFO,J.O.; MAHAN,G.D.

2000-05-11T23:59:59.000Z

219

~~~~: Gmt Lakes Cat-bar) ALTERNaTE I  

Office of Legacy Management (LM)

~~~: Gmt Lakes Cat-bar) ~~~: Gmt Lakes Cat-bar) ALTERNaTE I --------------------------------------- NAME: 333 Iv. Mkhi qr) Aw. thka o ~~~---~~~--~~~_-----__ C I TV : 8 Morim 'Love 82 10 bhh &Q Ir -+----------- STATE- fL I - ------ l OWNER(S) -__----_ past: Current: I --------------------____ Owner contacted q yes p no; _____--_____-____------~~~l if yes, data contacted -_--------__- TYPE OF OPERATION ---_------------- 0 Research & Development q Production scale testing 0 Pilot Scale 0 Bench Scale process 0 Theoretical Studies 0 Sample & Analysis Facility Type p Manufacturing I ! fJ University 0 Research Organization ! 0 Government Sponsored F+ci li ty 0 Other ----~~-~~~----~------ 0 Production 0 Disposal/Storage TYPE OF CUNTRKT ----~---~__----_ / w Prime

220

Multiple charge density wave transitions in Gd2Te5  

Science Conference Proceedings (OSTI)

Diffraction measurements performed via transmission electron microscopy and high resolution X-ray scattering reveal two distinct charge density wave transitions in Gd{sub 2}Te{sub 5} at T{sub c1} = 410(3) and T{sub c2} = 532(3) K, associated with the on-axis incommensurate lattice modulation and off-axis commensurate lattice modulation respectively. Analysis of the temperature dependence of the order parameters indicates a non-vanishing coupling between these two distinct CDW states.

Shin, K.Y.; Ru, N.; /Stanford U., Geballe Lab. /Stanford U., Appl. Phys. Dept.; Condron, C.L.; /SLAC, SSRL; Wu, Y.Q.; Kramer, M.J.; Toney, M.F.; /Ames Lab /Iowa State U., Dept. Mater. Sci. /SLAC, SSRL; Fisher, I.R.; /Stanford U., Geballe Lab. /Stanford U., Appl. Phys. Dept.

2010-02-15T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Conformal and projection diagrams in LaTeX  

E-Print Network (OSTI)

In general relativity, the causal structure of space-time may sometimes be depicted by conformal Carter-Penrose diagrams or a recent extension of these - the projection diagrams. The introduction of conformal diagrams in the sixties was one of the progenitors of the golden age of relativity. They are the key ingredient of many scientific papers. Unfortunately, drawing them in the form suitable for LaTeX documents is time-consuming and not easy. We present below a library that allows one to draw an arbitrary conformal diagram in a few simple steps.

Christa R. Ölz; Sebastian J. Szybka

2013-05-09T23:59:59.000Z

222

High-Temperature Microfluidic Synthesis of CdSe Nanocrystals in Nanoliter Droplets  

E-Print Network (OSTI)

Microfluidic Synthesis of CdSe Nanocrystals in Nanolitertemperature synthesis of CdSe nanocrystals in nanoliter-produced high quality CdSe nanocrystals, as verified by

Chan, Emory M.; Alivisatos, A. Paul; Mathies, Richard A.

2005-01-01T23:59:59.000Z

223

Mechanical and electronic-structure properties of compressed CdSe tetrapod nanocrystals  

E-Print Network (OSTI)

properties of compressed CdSe tetrapod nanocrystals Joshuamechanical properties of CdSe tetrapods under directionalstructural transformations in CdSe nanocrystals, it has only

Schrier, Joshua; Lee, Byounghak; Wang, Lin-Wang

2008-01-01T23:59:59.000Z

224

Leader Electronics: Noncompliance Determination (2010-SE-2301) | Department  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Noncompliance Determination (2010-SE-2301) Noncompliance Determination (2010-SE-2301) Leader Electronics: Noncompliance Determination (2010-SE-2301) August 24, 2010 DOE issued a Notice of Noncompliance Determination to Leader Electronics, Inc. finding that "NU50-2093400-I3(NU50-21090-300F)" and "MU03-F050040-A1(MU03-Fl050-AKOS)" of external power supplies do not comport with the energy conservation standards. DOE determined the product was noncompliant based on the company's own testing. Leader Electronics must immediately notify each person (or company) to whom Leader Electronics distributed the noncompliant products that the products do not meet Federal standards. In addition, Leader Electronics must provide to DOE documents and records showing the number of units Leader Electronics

225

Central Moloney: Noncompliance Determination (2013-SE-4702) | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Central Moloney: Noncompliance Determination (2013-SE-4702) Central Moloney: Noncompliance Determination (2013-SE-4702) Central Moloney: Noncompliance Determination (2013-SE-4702) March 11, 2013 DOE issued a Notice of Noncompliance Determination to Central Moloney, Inc. finding that liquid-immersed distribution transformer basic models 30300150 and 32500095 do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. Central Moloney must immediately notify each person (or company) to whom Central Moloney distributed the noncompliant products that the products do not meet Federal standards. In addition, Central Moloney must provide to DOE documents and records showing the number of units Central Moloney distributed and to whom. The manufacturer and/or private labeler

226

Hicon: Noncompliance Determination (2013-SE-1426) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Hicon: Noncompliance Determination (2013-SE-1426) Hicon: Noncompliance Determination (2013-SE-1426) Hicon: Noncompliance Determination (2013-SE-1426) February 14, 2013 DOE issued a Notice of Noncompliance Determination to Ningbo Hicon International Industry Company, Ltd. finding that model number BD-200, a compact chest freezer, does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Hiicon must immediately notify each person (or company) to whom Hicon distributed the noncompliant products that the product does not meet Federal standards. In addition, Hicon must provide to DOE documents and records showing the number of units Hicon distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil

227

Universal: Noncompliance Determination (2013-SE-26004) | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Universal: Noncompliance Determination (2013-SE-26004) Universal: Noncompliance Determination (2013-SE-26004) Universal: Noncompliance Determination (2013-SE-26004) September 6, 2013 DOE issued a Notice of Noncompliance Determination to Universal Lighting Technologies, Inc. finding that fluorescent lamp ballast model B140R277HP does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Universal must immediately notify each person (or company) to whom Universal distributed the noncompliant products that the product does not meet Federal standards. In addition, Universal must provide to DOE documents and records showing the number of units Universal distributed and to whom. The manufacturer and/or private labeler of the product may be subject to

228

SeQuential Biofuels LLC | Open Energy Information  

Open Energy Info (EERE)

SeQuential Biofuels LLC SeQuential Biofuels LLC Jump to: navigation, search Name SeQuential Biofuels LLC Place Portland, Oregon Zip 97231 Sector Biofuels Product A biofuels marketing and distribution company with several offices in Oregon. Coordinates 45.511795°, -122.675629° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":45.511795,"lon":-122.675629,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

229

Fuzhou Sunlight: Noncompliance Determination (2010-SE-1402) | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Sunlight: Noncompliance Determination (2010-SE-1402) Sunlight: Noncompliance Determination (2010-SE-1402) Fuzhou Sunlight: Noncompliance Determination (2010-SE-1402) June 16, 2010 DOE issued a Notice of Noncompliance Determination to Fuzhou Sunlight Lighting Electrical Appliance Co., Ltd. finding that a variety of models of incandescent reflector lamps do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. Fuzhou Sunlight must immediately notify each person (or company) to whom Fuzhou Sunlight distributed the noncompliant products that the products do not meet Federal standards. In addition, Fuzhou Sunlight must provide to DOE documents and records showing the number of units Fuzhou Sunlight distributed and to whom. The manufacturer

230

GE Lighting Solutions: Noncompliance Determination (2013-SE-4901) |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Noncompliance Determination (2013-SE-4901) Noncompliance Determination (2013-SE-4901) GE Lighting Solutions: Noncompliance Determination (2013-SE-4901) January 11, 2013 DOE issued a Notice of Noncompliance Determination to General Electric Lighting Solutions finding that various models of traffic signal modules do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. GE Lighting Solutions must immediately notify each person (or company) to whom GE Lighting Solutions distributed the noncompliant products that the products do not meet Federal standards. In addition, GE Lighting Solutions must provide to DOE documents and records showing the number of units GE Lighting Solutions distributed and to whom. The manufacturer

231

Aspen: Noncompliance Determination (2011-SE-1602) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Aspen: Noncompliance Determination (2011-SE-1602) Aspen: Noncompliance Determination (2011-SE-1602) Aspen: Noncompliance Determination (2011-SE-1602) October 3, 2011 DOE issued a Notice of Noncompliance Determination to Aspen Manufacturing finding that indoor unit model AEW244 and outdoor unit model NCPC-424-3010 of residential split system central air conditioning system do not comport with the energy conservation standards. DOE determined the product was noncompliant based on the company's own testing. Aspen must immediately notify each person (or company) to whom Aspen distributed the noncompliant products that the product does not meet Federal standards. In addition, Aspen must provide to DOE documents and records showing the number of units Aspen distributed and to whom. The manufacturer and/or private labeler of

232

Precision: Noncompliance Determination (2013-SE-1410) | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Precision: Noncompliance Determination (2013-SE-1410) Precision: Noncompliance Determination (2013-SE-1410) Precision: Noncompliance Determination (2013-SE-1410) April 10, 2013 DOE issued a Notice of Noncompliance Determination to Precision Trading Corp. finding that Precision model Premium PFR515M, a freezer, does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Precision must immediately notify each person (or company) to whom Precision distributed the noncompliant products that the product does not meet Federal standards. In addition, Precision must provide to DOE documents and records showing the number of units Precision distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties.

233

Philips: Noncompliance Determination (2012-SE-2605) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Noncompliance Determination (2012-SE-2605) Noncompliance Determination (2012-SE-2605) Philips: Noncompliance Determination (2012-SE-2605) August 31, 2012 DOE issued a Notice of Noncompliance Determination to Philips Lighting Electronics N. A. finding that basic model VEL-1S40-SC, a fluorescent lamp ballast, does not comport with the energy conservation standards. DOE determined the product was noncompliant based on the company's own testing. Philips must immediately notify each person (or company) to whom Philips distributed the noncompliant products that the product does not meet Federal standards. In addition, Philips must provide to DOE documents and records showing the number of units Philips distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties.

234

Universal: Noncompliance Determination (2013-SE-26004) | Department of  

NLE Websites -- All DOE Office Websites (Extended Search)

Universal: Noncompliance Determination (2013-SE-26004) Universal: Noncompliance Determination (2013-SE-26004) Universal: Noncompliance Determination (2013-SE-26004) September 6, 2013 DOE issued a Notice of Noncompliance Determination to Universal Lighting Technologies, Inc. finding that fluorescent lamp ballast model B140R277HP does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Universal must immediately notify each person (or company) to whom Universal distributed the noncompliant products that the product does not meet Federal standards. In addition, Universal must provide to DOE documents and records showing the number of units Universal distributed and to whom. The manufacturer and/or private labeler of the product may be subject to

235

Sears: Noncompliance Determination (2011-SE-1418) | Department of Energy  

NLE Websites -- All DOE Office Websites (Extended Search)

Sears: Noncompliance Determination (2011-SE-1418) Sears: Noncompliance Determination (2011-SE-1418) Sears: Noncompliance Determination (2011-SE-1418) June 26, 2012 DOE issued a Notice of Noncompliance Determination to Sears, Roebuck & Co. finding that Kenmore-brand model number 255.19502010 ("19502") and Kenmore-brand model number 255.19702010 ("19702"), compact chest freezers, do not comport with the energy conservation standards. DOE determined the products were noncompliant based on DOE testing. Sears must immediately notify each person (or company) to whom Sears distributed the noncompliant products that the products do not meet Federal standards. In addition, Sears must provide to DOE documents and records showing the number of units Sears distributed and to whom. The manufacturer and/or private labeler of

236

Cooper: Noncompliance Determination (2012-SE-4701) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Cooper: Noncompliance Determination (2012-SE-4701) Cooper: Noncompliance Determination (2012-SE-4701) Cooper: Noncompliance Determination (2012-SE-4701) June 12, 2012 DOE issued a Notice of Noncompliance Determination to Cooper Power Systems, LLC finding that basic models 277-99.28, 277-99.26, and 277-99.22 of distribution transformers do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. Cooper must immediately notify each person (or company) to whom Cooper distributed the noncompliant products that the products do not meet Federal standards. In addition, Cooper must provide to DOE documents and records showing the number of units Cooper distributed and to whom. The manufacturer and/or private labeler of the product may

237

Teddico: Noncompliance Determination (2012-SE-5409) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Teddico: Noncompliance Determination (2012-SE-5409) Teddico: Noncompliance Determination (2012-SE-5409) Teddico: Noncompliance Determination (2012-SE-5409) November 20, 2012 DOE issued a Notice of Noncompliance Determination to The Electrical Design, Development and Implementation Company d/b/a Teddico finding that a variety of basic models of magnetic probe-start metal halide lamp fixtures do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. Teddico must immediately notify each person (or company) to whom Teddico distributed the noncompliant products that the products do not meet Federal standards. In addition, Teddico must provide to DOE documents and records showing the number of units Teddico distributed and to whom. The

238

Simkar: Noncompliance Determination (2012-SE-5408) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Noncompliance Determination (2012-SE-5408) Noncompliance Determination (2012-SE-5408) Simkar: Noncompliance Determination (2012-SE-5408) December 5, 2012 DOE issued a Notice of Noncompliance Determination to Simkar Corporation finding that magnetic probe-start and pulse-start basic models of metal halide lamp fixtures do not comport with the energy conservation standards. DOE determined the products were noncompliant based on Simkar's own testing. Simkar must immediately notify each person (or company) to whom Simkar distributed the noncompliant products that the products do not meet Federal standards. In addition, Simkar must provide to DOE documents and records showing the number of units Simkar distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties.

239

Felix Storch: Noncompliance Determination (2011-SE-1420) | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Felix Storch: Noncompliance Determination (2011-SE-1420) Felix Storch: Noncompliance Determination (2011-SE-1420) Felix Storch: Noncompliance Determination (2011-SE-1420) October 5, 2011 DOE issued a Notice of Noncompliance Determination to Felix Storch, Inc., finding that model number CF11ES, a chest freezer does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Felix Storch must immediately notify each person (or company) to whom Felix Storch distributed the noncompliant products that the product does not meet Federal standards. In addition, Felix Storch must provide to DOE documents and records showing the number of units Felix Storch distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil

240

Bigwall: Noncompliance Determination (2013-SE-1412) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Bigwall: Noncompliance Determination (2013-SE-1412) Bigwall: Noncompliance Determination (2013-SE-1412) Bigwall: Noncompliance Determination (2013-SE-1412) April 10, 2013 DOE issued a Notice of Noncompliance Determination to Bigwall Enterprises, Inc. finding that freezer model W1CF106 under the Wellington brand (''the Wellington W1CF106") does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Bigwall Enterprises, Inc. must immediately notify each person (or company) to whom Bigwall distributed the noncompliant products that the product does not meet Federal standards. In addition, Bigwall must provide to DOE documents and records showing the number of units Bigwall distributed and to whom. The manufacturer and/or private labeler of the

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Leader Electronics: Notice of Allowance (2010-SE-2301) | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Leader Electronics: Notice of Allowance (2010-SE-2301) Leader Electronics: Notice of Allowance (2010-SE-2301) Leader Electronics: Notice of Allowance (2010-SE-2301) September 13, 2010 DOE issued a Notice of Allowance to Resume Distribution to Leader Electronics Inc., authorizing Leader Electronics to resume distribution of the external power supply model "MU03-F050040-A1(MU03-F1050-AKOS)". DOE had previously issued a Notice of Non-Compliance Determination based on test results submitted by Leader Electronics showing that certain models were noncompliant. After an internal review, Leader Electronics determined that the original test results reported to DOE were incorrect. Leader has submitted complete test data, which DOE has reviewed closely, and DOE has determined that the model complies with the applicable energy conservation

242

CNA: Noncompliance Determination (2013-SE-1430) | Department of Energy  

NLE Websites -- All DOE Office Websites (Extended Search)

Noncompliance Determination (2013-SE-1430) Noncompliance Determination (2013-SE-1430) CNA: Noncompliance Determination (2013-SE-1430) July 1, 2013 DOE issued a Notice of Noncompliance Determination to CNA International, Inc., d/b/a MC Appliance Corp. finding that Magic Chef-brand model HMCF7W ("CNA model HMCF7W") does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. CNA must immediately notify each person (or company) to whom CNA distributed the noncompliant products that the product does not meet Federal standards. In addition, CNA must provide to DOE documents and records showing the number of units CNA distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties.

243

Golden Opportunity: Noncompliance Determination (2013-SE-1418) | Department  

NLE Websites -- All DOE Office Websites (Extended Search)

Noncompliance Determination (2013-SE-1418) Noncompliance Determination (2013-SE-1418) Golden Opportunity: Noncompliance Determination (2013-SE-1418) April 24, 2013 DOE issued a Notice of Noncompliance Determination to Golden Opportunity, Inc. finding that freezer models Golden GFC51 and Golden GFC69 do not comport with the energy conservation standards. DOE determined the products were noncompliant based on DOE testing. Golden Opportunity must immediately notify each person (or company) to whom Golden Opportunity distributed the noncompliant products that the products do not meet Federal standards. In addition, Golden Opportunity must provide to DOE documents and records showing the number of units Golden Opportunity distributed and to whom. The manufacturer and/or private labeler of the products may be

244

Bigwall: Noncompliance Determination (2013-SE-1412) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Noncompliance Determination (2013-SE-1412) Noncompliance Determination (2013-SE-1412) Bigwall: Noncompliance Determination (2013-SE-1412) April 10, 2013 DOE issued a Notice of Noncompliance Determination to Bigwall Enterprises, Inc. finding that freezer model W1CF106 under the Wellington brand (''the Wellington W1CF106") does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Bigwall Enterprises, Inc. must immediately notify each person (or company) to whom Bigwall distributed the noncompliant products that the product does not meet Federal standards. In addition, Bigwall must provide to DOE documents and records showing the number of units Bigwall distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties.

245

Simple shear processing of bulk BI?TE? alloys  

E-Print Network (OSTI)

The objective of this work is to determine the appropriate extrusion conditions of cast Bi?Te? alloys via equal channel angular extrusion (ECAE) to produce material that has a fine grain size (5~30[]m), uniform grain morphology and low grain boundary misorientation for improving thermoelectric and mechanical properties. The range of variables examined in this study includes: alloy type (p- and n-type) extrusion temperature (400 ~ 525?C), extrusion route (A, B, C and E), extrusion speed (0.3 ~ 0.01 in/min), and the number of extrusions (1, 2, 4 and 8). The microstructure is characterized by a polarized optical microscopy. Successful extrusions were accomplished at a temperature and strain rate that enabled dynamic recrystallization. Holding in the hot die after extrusion encouraged grain growth. The post processed grain size is found to be strongly dependent on extrusion temperature and extrusion speed. The microstructural uniformity is found to be dependent on the number of extrusions and extrusion route. Uniform equiaxial grain of 10 to 30mm average size are obtained in the p-type alloy after four extrusion passes following route E at a temperature of 500?C and an extrusion speed of 0.1 in/min. The results encourage further work and indicate ECAE is a viable method of grain refinement of Bi?Te? alloys.

Im, Jae-taek

2001-01-01T23:59:59.000Z

246

Advanced CdTe Photovoltaic Technology: September 2007 - March 2009  

DOE Green Energy (OSTI)

During the last eighteen months, Abound Solar (formerly AVA Solar) has enjoyed significant success under the SAI program. During this time, a fully automated manufacturing line has been developed, fabricated and commissioned in Longmont, Colorado. The facility is fully integrated, converting glass and semiconductor materials into complete modules beneath its roof. At capacity, a glass panel will enter the factory every 10 seconds and emerge as a completed module two hours later. This facility is currently undergoing trials in preparation for large volume production of 120 x 60 cm thin film CdTe modules. Preceding the development of the large volume manufacturing capability, Abound Solar demonstrated long duration processing with excellent materials utilization for the manufacture of high efficiency 42 cm square modules. Abound Solar prototype modules have been measured with over 9% aperture area efficiency by NREL. Abound Solar demonstrated the ability to produce modules at industry leading low costs to NREL representatives. Costing models show manufacturing costs below $1/Watt and capital equipment costs below $1.50 per watt of annual manufacturing capacity. Under this SAI program, Abound Solar supported a significant research and development program at Colorado State University. The CSU team continues to make progress on device and materials analysis. Modeling for increased device performance and the effects of processing conditions on properties of CdTe PV were investigated.

Barth, K.

2011-05-01T23:59:59.000Z

247

A Search for TeV Emission from Active Galaxies using the Milagro Observatory  

E-Print Network (OSTI)

: Professor Gregory W. Sullivan, Chairman/Advisor Professor Jordan A. Goodman Professor Rabindra N. Mohapatra that observes very high energy gamma rays (100 GeV to 100 TeV) using the water-Cerenkov techniqueV candidates. Active galaxies have been observed to be highly variable at TeV energies. To test for episodic

California at Santa Cruz, University of

248

Search for Short Duration Bursts of TeV Gamma Rays with the Milagrito Telescope  

E-Print Network (OSTI)

OG 2.3.07 Search for Short Duration Bursts of TeV Gamma Rays with the Milagrito Telescope Gus for short duration bursts of TeV photons. Such bursts may result from "traditional" gamma-ray bursts to gamma-ray bursts, the final stages of black hole evaporation) the most compelling reason may

California at Santa Cruz, University of

249

Effects of Surface Composition on CdTe/CdS Device Performance  

DOE Green Energy (OSTI)

The atomic composition of the back surface of the CdTe layer in a CdTe/CdS photovoltiac (PV) device has a significant influence on the quality of the electrical contact to this layer. This paper reports the results of a systematic study that correlates the composition of the back surface with pre-contact processing and device performance.

Levi, D.; Albin, D.; King, D.

2000-01-01T23:59:59.000Z

250

Fabrication and Physics of CdTe Devices by Sputtering: Final Report, 1 March 2005 - 30 November 2008  

DOE Green Energy (OSTI)

Work to understand CdS/CdTe solar cell device physics; increase magnetron sputtering rate (while keeping high device quality); reduce thickness of CdTe layers (while keeping voltage and fill factor).

Compaan, A.; Collins, R.; Karpov, V.; Giolando, D.

2009-04-01T23:59:59.000Z

251

Distributed fault management in WBEM-Based Inter-AS TE for qos guaranteed DiffServ-over–MPLS  

Science Conference Proceedings (OSTI)

Distributed fault management and event notification are essential in Inter-AS Traffic Engineering (TE). In this paper we design and implement distributed fault management for WBEM based inter-AS TE. We designed DMTF Managed Object Format (MOF) based ...

Abdurakhmon Abdurakhmanov; Shahnaza Tursunova; Shanmugham Sundaram; Young-Tak Kim

2006-09-01T23:59:59.000Z

252

Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells  

Science Conference Proceedings (OSTI)

Exciton photoluminescence spectra, photoluminescence excitation spectra, and magnetophotoluminescence spectra of single (GaAs/AlGaAs/ZnMnSe) and double (GaAs/AlGaAs/ZnSe/ZnCdMnSe) heterovalent quantum wells formed by molecular beam epitaxy are studied. It is shown that the exciton absorption spectrum of such quantum wells mainly reproduces the resonant exciton spectrum expected for usual quantum wells with similar parameters, while the radiative exciton recombination have substantial distinctions, in particular the additional localization mechanism determined by defects generated by heterovalent interface exists. The nature of these localization centers is not currently clarified; their presence leads to broadening of photoluminescence lines and to an increase in the Stokes shift between the peaks of luminescence and absorption, as well as determining the variation in the magnetic g factor of bound exciton complexes.

Toropov, A. A., E-mail: toropov@beam.ioffe.ru; Kaibyshev, V. Kh.; Terent'ev, Ya. V.; Ivanov, S. V.; Kop'ev, P. S. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

2011-02-15T23:59:59.000Z

253

Strong downslope wind events in Ammassalik, SE Greenland  

Science Conference Proceedings (OSTI)

Ammassalik in SE Greenland is known for strong winds events that can reach hurricane intensity and cause severe destruction in the local town. Yet, these winds and their impact on the nearby fjord and shelf region have not been studied in detail.

M. Oltmanns; F. Straneo; G. W. K. Moore; S. H. Mernild

254

Phase formation and phase transformations in Bi-Te films with nanoscale thickness  

Science Conference Proceedings (OSTI)

The processes of phase formation are studied in a binary Bi-Te system using the kinematic electron diffraction technique. It is established that, in the case of both simultaneous and layer-by-layer deposition of bismuth and tellurium and irrespective of the order of their deposition, phases with compositions Bi{sub 2}Te{sub 3} and BiTe are formed at the condensation plane in the amorphous and crystalline state, respectively. The amorphous Bi{sub 2}Te{sub 3} phase is stable at room temperature and crystallizes at a temperature of 423 K. It is shown that ordering of the phase BiTe is not a consequence of atomic order of the structure; rather, it is caused by the real structure of the object (by blocks)

Akhmedov, K. M. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)], E-mail: axmedovqurban@rambler.ru

2008-09-15T23:59:59.000Z

255

Health and environmental hazards of CdTe photovoltaic module production, use and decommissioning  

DOE Green Energy (OSTI)

Health and environmental (H&E) risks presented by CdTe photovoltaic module production, use and decommissioning have been reviewed and discussed by several authors. Several H&E concerns exit. The estimated risks are based on extrapolations of toxicity, environmental mobility, and bioavailability data for other inorganic cadmium compounds. Little information, however, is available about CdTe itself. In response to the increased interest in CdTe, Brookhaven National Laboratory (BNL) has been engaged in a cooperative research program with the National Institute of Environmental Health Sciences (NIEHS), the Fraunhofer Institute for Solid State Technology (IFT), and the GSF Institute of Chemical Ecology to develop fundamental toxicological and environmental data for CdTe. This paper describes the results of these studies, and their potential implications with respect to the H&E hazards presented by CdTe module production, use and decommissioning.

Moskowitz, P.D. [Brookhaven National Lab., Upton, NY (United States); Steinberger, H. [Fraunhofer Institut fur Festkorpertechnologie, Munchen (Germany); Thumm, W. [GSF-Institute of Ecological Chemistry, Oberschleissheim (Germany)

1995-02-01T23:59:59.000Z

256

Te Inclusions in CZT Detectors: New Method for Correcting Their Adverse Effects  

Science Conference Proceedings (OSTI)

Both Te inclusions and point defects can trap the charge carriers generated by ionizing particles in CdZnTe (CZT) detectors. The amount of charge trapped by point defects is proportional to the carriers’ drift time and can be corrected electronically. In the case of Te inclusions, the charge loss depends upon their random locations with respect to the electron cloud. Consequently, inclusions introduce fluctuations in the charge signals, which cannot be easily corrected. In this paper, we describe direct measurements of the cumulative effect of Te inclusions and its influence on the response of CZT detectors of different thicknesses and different sizes and concentrations of Te inclusions. We also discuss a means of partially correcting their adverse effects.

Bolotnikov, A.E.; Babalola, S.; Camarda, G.S.; Cui, Y.; Egarievwe, S.U.; Hawrami, R.; Hossain, A.; Yang, G.; James, R.B.

2009-10-25T23:59:59.000Z

257

Te Inclusions in CZT Detectors: New Method for Correcting Their Adverse Effects  

Science Conference Proceedings (OSTI)

Both Te inclusions and point defects can trap the charge carriers generated by ionizing particles in CdZnTe (CZT) detectors. The amount of charge trapped by point defects is proportional to the carriers' drift time and can be corrected electronically. In the case of Te inclusions, the charge loss depends upon their random locations with respect to the electron cloud. Consequently, inclusions introduce fluctuations in the charge signals, which cannot be easily corrected. In this paper, we describe direct measurements of the cumulative effect of Te inclusions and its influence on the response of CZT detectors of different thicknesses and different sizes and concentrations of Te inclusions. We also discuss a means of partially correcting their adverse effects.

Bolotnikov, A.; Babaloa, S; Camarda, G; Cui, Y; Egarievwe, S; Hawrami, R; Hossain, A; Yang, G; James, R

2010-01-01T23:59:59.000Z

258

V-183: Cisco TelePresence TC and TE Bugs Let Remote Users Deny Service and  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3: Cisco TelePresence TC and TE Bugs Let Remote Users Deny 3: Cisco TelePresence TC and TE Bugs Let Remote Users Deny Service and Remote Adjacent Authenticated Users Gain Root Shell Access V-183: Cisco TelePresence TC and TE Bugs Let Remote Users Deny Service and Remote Adjacent Authenticated Users Gain Root Shell Access June 21, 2013 - 6:00am Addthis PROBLEM: Three vulnerabilities were reported in Cisco TelePresence TC and TE PLATFORM: The following product models are affected by the vulnerabilities: Cisco TelePresence MX Series Cisco TelePresence System EX Series Cisco TelePresence Integrator C Series Cisco TelePresence Profiles Series running Cisco TelePresence Quick Set Series Cisco IP Video Phone E20 ABSTRACT: Cisco TelePresence TC and TE Software contain two vulnerabilities in the implementation of the Session Initiation Protocol (SIP) that could allow an

259

CdTe Feedstock Development and Validation: Cooperative Research and Development Final Report, CRADA Number CRD-08-00280  

DOE Green Energy (OSTI)

The goal of this work was to evaluate different CdTe feedstock formulations (feedstock provided by Redlen) to determine if they would significantly improve CdTe performance with ancillary benefits associated with whether changes in feedstock would affect CdTe cell processing and possibly reliability of cells. Feedstock also included attempts to intentionally dope the CdTe with pre-selected elements.

Albin, D.

2011-05-01T23:59:59.000Z

260

Investigation of Junction Properties of CdS/CdTe Solar Cells and their Correlation to Device Properties (Presentation)  

DOE Green Energy (OSTI)

The objective of the Junction Studies are: (1) understand the nature of the junction in the CdTe/CdS device; (2) correlate the device fabrication parameters to the junction formation; and (3) develop a self consistent device model to explain the device properties. Detailed analysis of CdS/CdTe and SnO{sub 2}/CdTe devices prepared using CSS CdTe is discussed.

Dhere, R. G.; Zhang, Y.; Romero, M. J.; Asher, S. E.; Young, M.; To, B.; Noufi, R.; Gessert, T. A.

2008-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
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261

Surface Enhanced Raman Spectroscopy of Pyridine on CdSe/ZnBeSe Quantum Dots Grown by MBE  

SciTech Connect

Using Surface Enhanced Raman Spectroscopy (SERS), we observed Raman enhancements (104-105) for pyridine molecules adsorbed on a II-VI semiconductor CdSe/ZnBeSe sample of uncapped self-assembled quantum dots produced by molecular beam epitaxy. When a monolayer of pyridine is adsorbed on these structures, excitation at 488 nm produces intense Raman spectra a very large enhancement of the a1, b1 and b2 modes. This indicates the presence of charge-transfer as a contributor to the enhacement.

Livingstone, Richard [City College of New York, New York, NY (United States)

2010-08-06T23:59:59.000Z

262

A GENERAL RELATIVISTIC EXTERNAL COMPTON-SCATTERING MODEL FOR TeV EMISSION FROM M87  

SciTech Connect

M87 is the first detected non-blazar extragalactic tera-electron-volt (TeV) source with rapid variation and a very flat spectrum in the TeV band. To explain the two peaks in the spectral energy distribution of the nucleus of M87, which is similar to that of blazars, the most commonly adopted models are the synchrotron self-Compton-scattering models and the external inverse Compton (EIC) scattering models. Considering that there is no correlated variation in the soft band (from radio to X-ray) matching the TeV variation and that the TeV sources should not suffer from {gamma}{gamma} absorption due to the flat TeV spectrum, the EIC models are advantageous in modeling the TeV emission from M87. In this paper, we propose a self-consistent EIC model to explain the flat TeV spectrum of M87 within the framework of fully general relativity, where the background soft photons are from the advection-dominated accretion flow around the central black hole, and the high-energy electrons are from the mini-jets that are powered by the magnetic reconnection in the main jet. In our model, both the TeV flares observed in the years 2005 and 2008 could be well explained: the {gamma}{gamma} absorption for TeV photons is very low, even inside the region very close to the black hole 20R{sub g} {approx} 50R{sub g} ; at the same region, the average EIC cooling time ({approx}10{sup 2} {approx} 10{sup 3} s) is short, which is consistent with the observed timescale of the TeV variation. Furthermore, we also discuss the possibility that the accompanying X-ray flare in 2008 is due to the direct synchrotron radiation of the mini-jets.

Cui Yudong; Yuan Yefei [Key Laboratory for Research in Galaxies and Cosmology, Department of Astronomy, University of Sciences and Technology of China, CAS, Hefei, Anhui 230026 (China); Li Yanrong; Wang Jianmin, E-mail: yfyuan@ustc.edu.cn [Key Laboratory for Particle Astrophysics, Institute of High Energy Physics, CAS, 19B Yuquan Road, Beijing 100049 (China)

2012-02-20T23:59:59.000Z

263

File:EIA-PSJ-SE-GAS.pdf | Open Energy Information  

Open Energy Info (EERE)

PSJ-SE-GAS.pdf PSJ-SE-GAS.pdf Jump to: navigation, search File File history File usage Paradox-San Juan Basin, Southeast Part By 2001 Gas Reserve Class Size of this preview: 463 × 599 pixels. Other resolution: 464 × 600 pixels. Full resolution ‎(5,100 × 6,600 pixels, file size: 13.13 MB, MIME type: application/pdf) Description Paradox-San Juan Basin, Southeast Part By 2001 Gas Reserve Class Sources Energy Information Administration Authors Samuel H. Limerick; Lucy Luo; Gary Long; David F. Morehouse; Jack Perrin; Robert F. King Related Technologies Oil, Natural Gas Creation Date 2005-09-01 Extent Regional Countries United States UN Region Northern America States Utah, Colorado, New Mexico, Arizona File history Click on a date/time to view the file as it appeared at that time.

264

Haier: Noncompliance Determination (2011-SE-1408) | Department of Energy  

NLE Websites -- All DOE Office Websites (Extended Search)

08) 08) Haier: Noncompliance Determination (2011-SE-1408) October 18, 2011 DOE issued a Notice of Noncompliance Determination to Haier America Trading, L.L.C. finding that model number HNCM070, a chest freezer, does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Haier must immediately notify each person (or company) to whom Haier distributed the noncompliant products that the product does not meet Federal standards. In addition, Haier must provide to DOE documents and records showing the number of units Haier distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties. Haier: Noncompliance Determination (2011-SE-1408) More Documents & Publications

265

Advanced Distributor Products: Noncompliance Determination (2010-SE-0304) |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Advanced Distributor Products: Noncompliance Determination Advanced Distributor Products: Noncompliance Determination (2010-SE-0304) Advanced Distributor Products: Noncompliance Determination (2010-SE-0304) May 28, 2010 DOE issued a Notice of Noncompliance Determination to Advanced Distributor Products finding that basic model N2H348A(G)KB* + H,GE50560 + *8MPV125 and basic model N2H360A(G)KB* + H,GE50560 + MV16J22**B* do not comport with the energy conservation standards. DOE determined the products were noncompliant based on ADP's certification. ADP must immediately notify each person (or company) to whom ADP distributed the noncompliant products that the product does not meet Federal standards. In addition, ADP must provide to DOE documents and records showing the number of units ADP distributed and to whom. The manufacturer and/or private labeler of the

266

Localizing Micro-grids Research for the SE Asian Region  

NLE Websites -- All DOE Office Websites (Extended Search)

Localizing Micro-grids Research for the SE Asian Region Localizing Micro-grids Research for the SE Asian Region Speaker(s): Cheng-Guan (Michael) Quah Valerie Choy Date: December 3, 2010 - 12:00pm Location: 90-3122 This presentation discusses developments (and test-beds) of micro-grids and distributed generation systems that are on-going in Singapore and poses the question as to whether simpler versions of such systems would be applicable to meet the challenges of rural electrification and energy poverty particularly those of its closest neighbors. Southeast Asia is an ethnically and culturally diverse region comprising more than 10 nations where 160 million people still live without electricity. Off-grid electrification for rural village communities and eco-resorts using DG and micro-grid systems are conceivable but many technical, political, cultural

267

Haier: Noncompliance Determination (2011-SE-1428) | Department of Energy  

NLE Websites -- All DOE Office Websites (Extended Search)

28) 28) Haier: Noncompliance Determination (2011-SE-1428) April 23, 2013 DOE issued a Notice of Noncompliance Determination to Haier America Trading, LLC finding that Haier model HMCM106EA, a freezer, does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Haier must immediately notify each person (or company) to whom Haier distributed the noncompliant products that the product does not meet Federal standards. In addition, Haier must provide to DOE documents and records showing the number of units Haier distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties. Haier: Noncompliance Determination (2011-SE-1428) More Documents & Publications

268

File:EIA-PSJ-SE-BOE.pdf | Open Energy Information  

Open Energy Info (EERE)

SE-BOE.pdf SE-BOE.pdf Jump to: navigation, search File File history File usage Paradox-San Juan Basin, Southeast Part By 2001 BOE Reserve Class Size of this preview: 463 × 599 pixels. Other resolution: 464 × 600 pixels. Full resolution ‎(5,100 × 6,600 pixels, file size: 13.15 MB, MIME type: application/pdf) Description Paradox-San Juan Basin, Southeast Part By 2001 BOE Reserve Class Sources Energy Information Administration Authors Samuel H. Limerick; Lucy Luo; Gary Long; David F. Morehouse; Jack Perrin; Robert F. King Related Technologies Oil, Natural Gas Creation Date 2005-09-01 Extent Regional Countries United States UN Region Northern America States Utah, Colorado, New Mexico, Arizona File history Click on a date/time to view the file as it appeared at that time.

269

A Se-mash Hit | Data.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

A Se-mash Hit A Se-mash Hit Developer Data Web Services Source Code Challenges Semantic Web Blogs Let's Talk Developers You are here Data.gov » Communities » Developers A Se-mash Hit Submitted by Data.gov Administrator on Tue, 12/18/2012 - 6:11pm Data.gov Mash-A-Thon 1 builds Web 3.0 apps and enthusiasm A lecture by Professor Jim Hendler at the Data.gov Mash-a-Thon 2010 For two days in August, a classroom in Washington, D.C.'s Dupont Circle filled with Federal developers, students and semantic web experts. They shared one purpose: to create a new generation of "linked-data" applications called "mashups" that use Data.gov's free public data in new and innovative ways. The U.S. government is in the vanguard of understanding and using the semantic web, which will transform the World Wide Web. Data will "talk" to one another,

270

Kinetics of Ge-Se-In Film Growth  

SciTech Connect

The processes of vacuum evaporation and condensation in the Ge-Se-In system were investigated. Thin amorphous films were deposited by modified thermal evaporation from previously synthesized non-crystalline (GeSe{sub y}){sub 1-x}In{sub x} ingots, where x = 0, 5, 10, 15, 20 and y = 4, 5 and 6. The specific evaporation rate was determined by measuring of the mass of evaporator before evaporation and the mass of empty evaporator after evaporation in temperature range of evaporation (500-800) K. The substrate temperature was varied in the range (300-430) K to study the condensation process and specific condensation rate was determined by measuring of the substrate mass before and after condensation. The condensation energy of the (GeSe{sub y}){sub 1-x}In{sub x} layers steady increases at indium addition.The thin films studied by transmission electron microscopy (TEM) and electron microdiffraction (EMD) reveal homogeneous and amorphous structure. The layer composition determined by Auger electron spectroscopy is close to that of the corresponded bulk samples.

Stoilova, A.; Petkov, P.; Nedeva, Y. [Department of Physics, University of Chemical Technology and Metallurgy, 1756 Sofia (Bulgaria); Monchev, B. [Institute of Electrochemistry and Energy Systems, BAS, 1113 Sofia (Bulgaria)

2010-01-21T23:59:59.000Z

271

Plasma graviton production in TeV-scale gravity  

E-Print Network (OSTI)

We develop the theory of interaction of classical plasma with Kaluza-Klein (KK) gravitons in the ADD model of TeV-scale gravity. Plasma is described within the kinetic approach as the system of charged particles and Maxwell field both confined on the brane. Interaction with multidimensional gravity living in the bulk with $n$ compact extra dimensions is introduced within the linearized theory. The KK gravitons emission rates are computed taking into account plasma collective effects through the two-point correlation functions of the fluctuations of the plasma energy-momentum tensor. Apart from known mechanisms (such as bremsstrahlung and gravi-Primakoff effect) we find essentially collective channels such as the coalescence of plasma waves into gravitons which may be manifest in turbulent plasmas. Our results indicate that commonly used rates of the KK gravitons production in stars and supernovae may be underestimated.

E. Yu. Melkumova

2010-12-14T23:59:59.000Z

272

Additional Characterization of Min-K TE-1400 Thermal Insulation  

Science Conference Proceedings (OSTI)

Min-K 1400TE (Thermal Ceramics, Augusta, Georgia) insulation material was further characterized at Oak Ridge National Laboratory (ORNL) for use in structural applications under gradient temperature conditions in an inert environment. Original characterization of Min-K was undertaken from April 1997 to July 2008 to determine its high temperature compressive strength and stress relaxation behavior up to 900 C in helium along with the formulation of a general model for the mechanical behavior exhibited by Min-K under these conditions. The additional testing described in this report was undertaken from April 2009 to June 2010 in an effort to further evaluate the mechanical behavior of Min-K when subjected to a variety of conditions including alternative test temperatures and time scales than previously measured. The behavior of Min-K under changing environments (temperature and strain), lateral loads, and additional isothermal temperatures was therefore explored.

Hemrick, James Gordon [ORNL; King, James [ORNL

2011-01-01T23:59:59.000Z

273

Development of Substrate Structure CdTe Photovoltaic Devices with Performance Exceeding 10%: Preprint  

DOE Green Energy (OSTI)

Most work on CdTe-based solar cells has focused on devices with a superstrate structure. This focus is due to the early success of the superstrate structure in producing high-efficiency cells, problems of suitable ohmic contacts for lightly doped CdTe, and the simplicity of the structure for manufacturing. The development of the CdCl2 heat treatment boosted CdTe technology and perpetuated the use of the superstrate structure. However, despite the beneficial attributes of the superstrate structure, devices with a substrate structure are attractive both commercially and scientifically. The substrate structure eliminates the need for transparent superstrates and thus allows the use of flexible metal and possibly plastic substrates. From a scientific perspective, it allows better control in forming the junction and direct access to the junction for detailed analysis. Research on such devices has been limited. The efficiency of these devices has been limited to around 8% due to low open-circuit voltage (Voc) and fill factor. In this paper, we present our recent device development efforts at NREL on substrate-structure CdTe devices. We have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. We have worked on a variety of contact materials including Cu-doped ZnTe and CuxTe. We will present a comparative analysis of the performance of these contacts. In addition, we have studied the influence of fabrication parameters on junction properties. We will present an overview of our development work, which has led to CdTe devices with Voc values of more than 860 mV and NREL-confirmed efficiencies approaching 11%.

Dhere, R. G.; Duenow, J. N.; DeHart, C. M.; Li, J. V.; Kuciauskas, D.; Gessert, T. A.

2012-08-01T23:59:59.000Z

274

Low cost sprayed CdTe solar cell research. First quarterly progress report, 15 August-14 November 1979  

DOE Green Energy (OSTI)

During the first quarter of this contract, facilities for the spray pyrolysis deposition of CdTe thin films using a process anolagous to that used to spray deposit device-quality films of CdS were prepared. A Te salt, ..beta..-(CH/sub 3/)/sub 2/TeI/sub 2/, suitable for use in the spray process was synthesized. The facilities were shown to function properly by the successful spraying of good quality CdS thin films. A number of initial spray experiments were conducted utilizing the ..beta..-(CH/sub 3/)/sub 2/TeI/sub 2/ and other inorganic tellurium-bearing compounds which also show great promise in producing low-cost sprayed CdTe solar cells. Initial chemical tests of these films indicated the presence of both Cd and Te, and x-ray diffraction analysis is presently underway to determine the actual concentration of CdTe.

Sienkiewicz, P.; Lis, S.; Serreze, H.B.; Entine, G.

1979-12-01T23:59:59.000Z

275

Recent results from the Milagro TeV gamma-ray observatory  

E-Print Network (OSTI)

Milagro is a gamma-ray observatory employing a water Cherenkov detector to observe extensive air showers produced by high-energy particles impacting in the Earth's atmosphere. We discuss the first detection of TeV gamma-rays from the Galactic plane and report the detection of an extended TeV source coincident with the EGRET source 3EG J0520+2556, and the observation of TeV emission from the Cygnus region of our Galaxy. We also summarize the status of our search for Very High Energy (VHE) emission from satellite-triggered Gamma Ray Bursts (GRBs) and discuss plans for the next generation water Cherenkov detector.

Parkinson, P M S

2005-01-01T23:59:59.000Z

276

Chapter 1.19: Cadmium Telluride Photovoltaic Thin Film: CdTe  

Science Conference Proceedings (OSTI)

The chapter reviews the history, development, and present processes used to fabricate thin-film, CdTe-based photovoltaic (PV) devices. It is intended for readers who are generally familiar with the operation and material aspects of PV devices but desire a deeper understanding of the process sequences used in CdTe PV technology. The discussion identifies why certain processes may have commercial production advantages and how the various process steps can interact with each other to affect device performance and reliability. The chapter concludes with a discussion of considerations of large-area CdTe PV deployment including issues related to material availability and energy-payback time.

Gessert, T. A.

2012-01-01T23:59:59.000Z

277

Light-Induced Tellurium Enrichment on CdZnTe Crystal Surfaces Detected by Raman Spectroscopy  

Science Conference Proceedings (OSTI)

CdZnTe (CZT) crystals can be grown under controlled conditions to produce high-quality crystals to be used as room-temperature radiation detectors. Even the best crystal growth methods result in defects, such as tellurium secondary phases, that affect the crystal's performance. In this study, CZT crystals were analyzed by micro-Raman spectroscopy. The growth of Te rich areas on the surface was induced by low-power lasers. The growth was observed versus time with low-power Raman scattering and was observed immediately under higher-power conditions. The detector response was also measured after induced Te enrichment.

Hawkins, Samantha A.; Villa-Aleman, Eliel; Duff, Martine C.; Hunter, Doug B.; Burger, Arnold; Groza, Michael; Buliga, Vladimir; Black, David R. (SRNL); (NIST); (Fisk U)

2008-12-08T23:59:59.000Z

278

POLARIZATION STUDIES OF CdZnTe DETECTORS USING SYNCHROTRON X-RAY RADIATION.  

Science Conference Proceedings (OSTI)

New results on the effects of small-scale defects on the charge-carrier transport in single-crystal CdZnTe (CZT) material were produced. We conducted detailed studies of the role of Te inclusions in CZT by employing a highly collimated synchrotron x-ray radiation source available at Brookhaven's National Synchrotron Light Source (NSLS). We were able to induce polarization effects by irradiating specific areas with the detector. These measurements allowed the first quantitative comparison between areas that are free of Te inclusions and those with a relatively high concentration of inclusions. The results of these polaration studies will be reported.

CAMARDA,G.S.; BOLOTNIKOV, A.E.; CUI, Y.; HOSSAIN, A.; JAMES, R.B.

2007-07-01T23:59:59.000Z

279

XPS and AES Studies of Cu/CdTe(111)-B  

DOE Green Energy (OSTI)

Copper is frequently used as a p-type dopant to improve the performance of back contacts in CdTe thin-film solar cells. In this study, surface-analysis techniques are used to probe fundamental interactions between Cu and the CdTe(111)-B surface. The results presented here were facilitated by the newly constructed surface-analysis cluster tool in the Measurements and Characterization Division at NREL; they reveal a host of fundamental phenomena that occur in the Cu/CdTe system.

Teeter, G.; Gessert, T. A.; Asher, S. E.

2005-01-01T23:59:59.000Z

280

Spectroscopy of low energy solar neutrinos using CdTe detectors  

E-Print Network (OSTI)

The usage of a large amount of CdTe(CdZnTe) semiconductor detectors for solar neutrino spectroscopy in the low energy region is investigated. Several different coincidence signals can be formed on five different isotopes to measure the Be-7 neutrino line at 862 keV in real-time. The most promising one is the usage of Cd-116 resulting in 89 SNU. The presence of Te-125 permits even the real-time detection of pp-neutrinos. A possible antineutrino flux above 713 keV might be detected by capture on Cd-106 .

K. Zuber

2002-06-19T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Spectroscopy of low energy solar neutrinos using CdTe detectors  

E-Print Network (OSTI)

The usage of a large amount of CdTe(CdZnTe) semiconductor detectors for solar neutrino spectroscopy in the low energy region is investigated. Several different coincidence signals can be formed on five different isotopes to measure the Be-7 neutrino line at 862 keV in real-time. The most promising one is the usage of Cd-116 resulting in 89 SNU. The presence of Te-125 permits even the real-time detection of pp-neutrinos. A possible antineutrino flux above 713 keV might be detected by capture on Cd-106 .

Zuber, K

2003-01-01T23:59:59.000Z

282

Space-charge-limited currents in an Se{sub 95}As{sub 5} chalcogenide glass-like semiconductor system containing EuF{sub 3} impurities  

Science Conference Proceedings (OSTI)

It is established that charge carrier (hole) transport in the Al-Se{sub 95}As{sub 5} Left-Pointing-Angle-Bracket EuF{sub 3} Right-Pointing-Angle-Bracket -Te structure is effected by unipolar injection currents limited by space charges with the involvement of two capture trap groups. Shallow traps corresponding to charged intrinsic defects C{sub 1}{sup -} are related to broken selenium bonds. Deep traps corresponding to charged intrinsic defects P{sub 2}{sup -} are formed by arsenic atoms with broken coordination. It is shown that the EuF{sub 3} impurity strongly affects the concentration of the capture traps, especially those localized near the Fermi level.

Isayev, A. I.; Mekhtiyeva, S. I.; Qaribova, S. N., E-mail: sqaribova@rambler.ru [Azerbaijan National Academy of Sciences, Abdullaev Institute of Physics (Azerbaijan)

2011-12-15T23:59:59.000Z

283

Cd1-xMnxTe semimagnetic semiconductors for ultrafast spintronics and magnetooptics  

Science Conference Proceedings (OSTI)

We present ultrafast optical characterization of Cd1-xMnxTe single crystals with high (x>0.5-Mn) concentration, studied by magnetooptical sampling and time-resolved magnetization modulation spectroscopy. We have demonstrated that ...

R. Rey-de-Castro; Daozhi Wang; A. Verevkin; A. Mycielski; R. Sobolewski

2005-01-01T23:59:59.000Z

284

Glass-like thermal transport in AgSbTe2 | ORNL  

NLE Websites -- All DOE Office Websites (Extended Search)

Glass-like thermal transport in AgSbTe2: nano-scale insights to improve thermoelectric efficiency May 16, 2013 Inelastic neutron scattering data showing the phonon dispersions...

285

Appendix B: CArBon dioxide CApture teChnology SheetS  

NLE Websites -- All DOE Office Websites (Extended Search)

teChnology uPDate, may 2013 eleCtroChemiCal membrane for Carbon DioxiDe CaPture & Power generation primary project goals FuelCell Energy, Inc. (FCE) is developing an...

286

Z' Bosons, the NuTeV Anomaly, and the Higgs Boson Mass  

E-Print Network (OSTI)

NuTeV Anomaly, and the Higgs Boson Mass Michael S. Chanowitzpredicted value of the Higgs boson mass, from ? 60 to ? 120from an increase in the Higgs boson mass. There is a vast

Chanowitz, Michael S

2009-01-01T23:59:59.000Z

287

Processing Effects on Junction Interdiffusion in CdS/CdTe Polycrystalline Devices  

DOE Green Energy (OSTI)

The performance of CdS/CdTe solar cells is strongly impacted by the process used to grow the CdS layer. CdS films grown by chemical-bath deposition (CBD) exhibit lower sublimation (CSS).

Albin, D.; Yan, Y.; King, D.; Moutinho, H.; Jones, K.; Matson, R.; Al-Jassim, M.

2000-01-01T23:59:59.000Z

288

Characterization of CdTe Nanoparticles Fabricated by Pulsed Electron Deposition Technique at Different Ablation Parameters  

Science Conference Proceedings (OSTI)

Telluride (CdTe) is a front-runner photovoltaic (PV) material because it has already attained efficiencies above 16%. The fabrication of CdTe nanoparticles has aroused considerable interest because of their potential application as active layer in organic/inorganic hybrid solar cells. They can also be used for sensitisation of wide band gap semiconductors. In this work, we explore pulsed electron beam deposition (PED) technique to fabricate CdTe nanoparticles. Two ablation parameters, namely background gas pressure and electron energy were varied to investigate their effects on the nanoparticle formation. AFM and optical transmission measurements indicate that we have fabricated CdTe nanocrystalline films exhibiting quantum confinement effect. These films contain scattered nanoparticles with diameters varying from 40 nm to 500 nm, which contribute to the optical absorption near the bulk bandgap energy. However, increasing the background pressure to 19 mTorr improves the nanocrystalline film uniformity.

Jackson, E.; Aga, R. Jr.; Steigerwald, A.; Ueda, A.; Pan, Z.; Collins, W. E.; Mu, R. [Department of Physics, Fisk University, 1000 17th Ave N, Nashville TN 37208 (United States)

2008-03-13T23:59:59.000Z

289

Low-cost CdZnTe devices for cascade cell application  

DOE Green Energy (OSTI)

This report describes a research program to develop a low-cost technique for producing Cd{sub 1-x}Zn{sub x}Te devices for cascade solar cell applications. The technique involves a two-stage process for fabricating such devices with a band gap of about 1.7 eV and a transparent contact layer of low-resistivity ZnTe. In the first stage, thin films of Cd, Zn, and Te are deposited in stacked layers as Cd{sub 1-x}An{sub x}Te. The second stage involves hearing and reacting the layers to form the compound. At first, electrodeposition was used for depositing the layers to successfully fabricate Dc{sub 1-x}Zn{sub x}Te thin-film devices. These films were also intrinsically doped with copper. For the first time, transparent ZnTe films of low resistivity were obtained in a two-stage process; preliminary solar cells using films with low Zn content were demonstrated. A second phase of the project involved growing films with higher Zn content (>15%). Such films were grown on CdS-coated substrates for fabricating devices. The effects of the solar-cell processing steps on the Cd{sub 1-x}Zn{sub x}Te and CdS/Cd{sub 1-x}Zn{sub x}Te interfaces were studied; results showed that the nature of the interface depended on the stoichiometry of the Cd{sub 1-x}Zn{sub x}Te thin film. A sharp interface was observed for the CdS/CdTe structures, but the interface became highly diffused as the Zn content in the absorber layer increased above 15%. The interaction between the CdS window layer and the Cd{sub 1-x}Zn{sub x}Te absorber layer was found to result from an exchange reaction between Zn in the absorber layer and the thin CdS film. 14 refs., 10 figs.

Basol, B.M.; Kapur, V.K. (International Solar Electric Technology, Inglewood, CA (USA))

1990-11-01T23:59:59.000Z

290

Shape dependence of band-edge exciton fine structure in CdSe nanocrystals  

E-Print Network (OSTI)

exciton fine structure in CdSe nanocrystals Qingzhong Zhao,fine structure of wurtzite CdSe nanocrystals is investigatedexciton fine structure of CdSe nanocrystals is determined by

Zhao, Qingzhong

2008-01-01T23:59:59.000Z

291

Strain-dependent photoluminescence behavior in three geometries of CdSe/CdS nanocrystals  

E-Print Network (OSTI)

X. et al. Shape control of CdSe nanocrystals. Nature 404,of nearly monodisperse CdSe/CdS core/shell nanocrystalsgrowth of highly luminescent CdSe/CdS nanoheterostructures

Choi, Charina L

2010-01-01T23:59:59.000Z

292

Deformation and shape transitions in hot rotating neutron deficient Te isotopes  

SciTech Connect

Evolution of the nuclear shapes and deformations under the influence of temperature and rotation is investigated in Te isotopes with neutron number ranging from the proton drip line to the stability valley. Spin dependent critical temperatures for the shape transitions in Te nuclei are computed. Shape transitions from prolate at low temperature and spin to oblate via triaxiality are seen with increasing neutron number and spin.

Aggarwal, Mamta [UM-DAE Centre for Excellence in Basic Sciences, University of Mumbai, Kalina Campus, Mumbai 400 098 (India); Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400 005 (India); Mazumdar, I. [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400 005 (India)

2009-08-15T23:59:59.000Z

293

Preparation and properties of evaporated CdTe films compared with single-crystal CdTe. Progress report no. 6, February 1, 1982-April 30, 1982  

DOE Green Energy (OSTI)

Films of n-type CdTe:In have been deposited by hot-wall vacuum evaporation (HWVE) on 7059 glass substrates, BaF/sub 2/ single crystal substrates, metal (Pt, Cr, Mo, Al) coated glass substrates, and single crystal p-type CdTe substrates. Films deposited on 7059 glass show typically a dark resistivity of 2 x 10/sup 5/ ohm-cm and a light resistivity of 3 x 10/sup 2/ ohm-cm. With increasing In source temperature, the resistivity decreases, but actually increases slightly again if the T/sub In/ is raised above 600/sup 0/C. Photoexcitation increases the electron density but does not affect the electron mobility. It appears that the grains are depleted in the dark. Films deposited on BaF/sup 2/ show dark resistivity of about 5 ohm-cm and light resistivity of about 2 ohm-cm, corresponding to electron densities of about 3 x 10/sup 16/ cm/sup -3/ and electron mobilities of about 30 cm/sup 2//V-sec. For doping levels abpove 10/sup 16/ cm/sup -3/ photoexcitation increases the mobility, but not the electron density; it appears that the grains are not depleted in the dark in this case. Cr coated 7059 glass makes an ohmic contact to n-type CdTe films. A Schottky diode formed with a 100A thick Au layer showed V/sub oc/ = 0.46 V, J/sub sc/ = 9 mA/cm/sup 2/ and a solar efficiency of about 2%. An n/p homojunction device was made by HWVE deposition of a 1.5 ..mu..m thick n-type CdTe layer on a p-type CdTe single crystal substrate. Values of V/sub oc/ = 0.73 V and J/sub sc/ = 0.24 mA/cm/sup 2/ were obtained. Grain boundary investigations showed the additive quality of two independent grain boundaries when measured in series, and tested the effects of passivation by Au, Cu, Li and H/sub 2/ in p-type CdTe grain boundaries, and In in n-type CdTe grain boundaries. Marked decreases in grain boundary resistance were observed after Li diffusion and H/sub 2/ diffusion in p-type CdTe.

Bube, R H

1982-01-01T23:59:59.000Z

294

Preparation and properties of evaporated CdTe films compared with single crystal CdTe. Progress report No. 4, August 1-October 31, 1981  

DOE Green Energy (OSTI)

The hot-wall vacuum evaporation system is nearly complete and the first films are expected in early December. CdTe homojunction cells were theoretically modelled and to some extent tested experimentally using the n-type CdTe film on p-type CdTe crystal homojunction cells previously deposited at Linz. Modelling emphasizes the known importance of surface recombination velocity for such homojunction cells. The n-type layer on the experimental cell was thinned by etching from 5 micrometers to 1.5 micrometers, with a corresponding increase in short-circuit current from 0.1 to 1 mA/cm/sup 2/. This behavior is as theoretically expected; to obtain a short-circuit current of 11 mA/cm/sup 2/, as required for a 10% cell, requires a thickness of about 0.2 micrometers for a surface recombination velocity of 10/sup 6/ cm/sec and other realistic cell parameters. By doping experiments on single crystal CdTe, it has been shown that the hole density does decrease when the P dopant density is decreased below a critical value in CdTe:P crystals, thus eliminating the possibility that the major acceptors in the P-doped crystals were not P impurity. Attempts to heavily dope CdTe with As were less successful, but this may be due to the use of elemental As as the dopant in this case rather than a compound of the dopant. Cs was shown to be an effective dopant of CdTe and resistivities as low as 0.3 ohm-cm corresponding to hole densities in the low 10/sup 17/ cm/sup -3/ range were obtained. An apparent correlation between the low-temperature barrier height associated with a grain boundary in CdTe and the angle of mismatch between the two grains has been observed. Improved capacitance of grain boundary measurements should yield defect densities.

Bube, R H

295

Valence Band Structure of Highly Efficient p-type Thermoelectric PbTe-PbS Alloys  

Science Conference Proceedings (OSTI)

New experimental evidence is given relevant to the temperature-dependence of valence band structure of PbTe and PbTe1-xSx alloys (0.04 x 0.12), and its effect on the thermoelectric figure of merit zT. The x = 0.08 sample has zT ~ 1.55 at 773K. The magnetic field dependence of the high-temperature Hall resistivity of heavily p-type (> 1019 cm-3) Na-doped PbTe1-xSx reveals the presence of high-mobility electrons. This put in question prior analyses of the Hall coefficient and the conclusion that PbTe would be an indirect gap semiconductor at temperatures where its zT is optimal. Possible origins for these electrons are discussed: they can be induced by photoconductivity, or by the topology of the Fermi surface when the L and -bands merge. Negative values for the low-temperature thermopower are also observed. Our data show that PbTe continues to be a direct gap semiconductor at temperatures where the zT and S2 of p-type PbTe are optimal e.g. 700-900K. The previously suggested temperature induced rapid rise in energy of the heavy hole LVB relative to the light hole UVB is not supported by the experimental data.

Jaworski, C. M. [Ohio State University; Nielsen, Mechele [Ohio State University; Wang, Hsin [ORNL; Girard, Steven N. [Northwestern University, Evanston; Cai, Wei [ORNL; Porter, Wallace D [ORNL; Kanatzidis, Mercouri G. [Northwestern University, Evanston; Heremans, J. P. [Ohio State University

2013-01-01T23:59:59.000Z

296

Can TeVeS avoid Dark Matter on galactic scales?  

E-Print Network (OSTI)

A fully relativistic analysis of gravitational lensing in TeVeS is presented. By estimating the lensing masses for a set of six lenses from the CASTLES database, and then comparing them to the stellar mass, the deficit between the two is obtained and analysed. Considering a parametrised range for the TeVeS function $mu(y)$, which controls the strength of the modification to gravity, it is found that on galactic scales TeVeS requires additional dark matter with the commonly used $mu(y)$. A soft dependence of the results on the cosmological framework and the TeVeS free parameters is discussed. For one particular form of $mu(y)$, TeVeS is found to require very little dark matter. This choice is however ruled out by rotation curve data. The inability to simultaneously fit lensing and rotation curves for a single form of $mu(y)$ is a challenge to a "no dark matter" TeVeS proposal.

Nick E. Mavromatos; Mairi Sakellariadou; Muhammad Furqaan Yusaf

2009-01-25T23:59:59.000Z

297

Oxygen Incorporation During Fabrication of Substrate CdTe Photovoltaic Devices: Preprint  

DOE Green Energy (OSTI)

Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower ({approx}6%-8%) than those of high-performance superstrate devices ({approx}17%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10%.

Duenow, J. N.; Dhere, R. G.; Kuciauskas, D.; Li, J. V.; Pankow, J. W.; DeHart, C. M.; Gessert, T. A.

2012-06-01T23:59:59.000Z

298

Defect Levels of Indium-doped CdMnTe Crystals  

Science Conference Proceedings (OSTI)

Using photoluminescence (PL) and current deep-level transient spectroscopy (I-DLTS), we investigated the electronic defects of indium-doped detector-grade CdMnTe:In (CMT:In) crystals grown by the vertical Bridgman method. We similarly analyzed CdZnTe:In (CZT:In) and undoped CdMnTe (CMT) crystals grown under the amount of same level of excess Te and/or indium doping level to detail the fundamental properties of the electronic defect structure more readily. Extended defects, existing in all the samples, were revealed by synchrotron white beam x-ray diffraction topography and scanning electron microscopy. The electronic structure of CMT is very similar to that of CZT, with shallow traps, A-centers, Cd vacancies, deep levels, and Te antisites. The 1.1-eV deep level, revealed by PL in earlier studies of CZT and CdTe, were attributed to dislocation-induced defects. In our I-DLTS measurements, the 1.1-eV traps showed different activation energies with applied bias voltage and an exponential dependence on the trap-filling time, which are typical characteristics of dislocation-induced defects. We propose a new defect-trap model for indium-doped CMT crystals.

K Kim; A Bolotinikov; G Camarda; R Gul; A Hossain; G Yang; Y Cui; R James

2011-12-31T23:59:59.000Z

299

SE-MA-NO Electric Coop | Open Energy Information  

Open Energy Info (EERE)

MA-NO Electric Coop MA-NO Electric Coop Jump to: navigation, search Name SE-MA-NO Electric Coop Place Missouri Utility Id 16851 Utility Location Yes Ownership C NERC Location SERC NERC SERC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Municipal HPS 100 W Lighting Municipal HPS 250 W Lighting Residential Residential Residential/Commercial HPS 100 W Lighting Residential/Commercial HPS 250 W Lighting Average Rates Residential: $0.0804/kWh Commercial: $0.0763/kWh Industrial: $0.0649/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a"

300

STATE OF WASHINGTON DEPARTMENT OF COMMERCE 1011 Plum Street SE  

NLE Websites -- All DOE Office Websites (Extended Search)

STATE OF WASHINGTON STATE OF WASHINGTON DEPARTMENT OF COMMERCE 1011 Plum Street SE ï‚Ÿ PO Box 42525 ï‚Ÿ Olympia, Washington 98504-2525 ï‚Ÿ (360) 725-4000 www.commerce.wa.gov July 33, 2013 Roland J. Risser Building Technologies Program Manager Office of Energy Efficiency and Renewable Energy U.S. Department of Energy 1000 Independence Avenue SW, Mail Stop EE-2J Washington, DC 20585-0121 RE: State Certification of Residential and Commercial Building Energy Codes Dear Mr. Risser: In compliance with Title III of the Energy Conservation and Production Act (ECPA) of 1976, as amended, this is to certify that the State of Washington has adopted the 2012 Edition, Washington State Energy Code, which meets or exceeds the 2012 version of the International Energy Conservation Code (IECC) for low-rise residential

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

File:EIA-PSJ-SE-LIQ.pdf | Open Energy Information  

Open Energy Info (EERE)

File File Edit with form History Facebook icon Twitter icon » File:EIA-PSJ-SE-LIQ.pdf Jump to: navigation, search File File history File usage Paradox-San Juan Basin, Southeast Part By 2001 Liquids Reserve Class Size of this preview: 463 × 599 pixels. Other resolution: 464 × 600 pixels. Full resolution ‎(5,100 × 6,600 pixels, file size: 13.12 MB, MIME type: application/pdf) Description Paradox-San Juan Basin, Southeast Part By 2001 Liquids Reserve Class Sources Energy Information Administration Authors Samuel H. Limerick; Lucy Luo; Gary Long; David F. Morehouse; Jack Perrin; Robert F. King Related Technologies Oil, Natural Gas Creation Date 2005-09-01 Extent Regional Countries United States UN Region Northern America States Utah, Colorado, New Mexico, Arizona

302

DEVELOPMENT OF CdZnTe RADIATION DETECTORS  

Science Conference Proceedings (OSTI)

Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconductor detectors because of its wide band-gap and high atomic number. Despite these advantages, CZT still presents some material limitations and poor hole mobility. In the past decade most of the developing CZT detectors focused on designing different electrode configurations, mainly to minimize the deleterious effect due to the poor hole mobility. A few different electrode geometries were designed and fabricated, such as pixelated anodes and Frisch-grid detectors developed at Brookhaven National Lab (BNL). However, crystal defects in CZT materials still limit the yield of detector-grade crystals, and, in general, dominate the detector's performance. In the past few years, our group's research extended to characterizing the CZT materials at the micro-scale, and to correlating crystal defects with the detector's performance. We built a set of unique tools for this purpose, including infrared (IR) transmission microscopy, X-ray micro-scale mapping using synchrotron light source, X-ray transmission- and reflection-topography, current deep level transient spectroscopy (I-DLTS), and photoluminescence measurements. Our most recent work on CZT detectors was directed towards detailing various crystal defects, studying the internal electrical field, and delineating the effects of thermal annealing on improving the material properties. In this paper, we report our most recent results.

BOLOTNIKOV, A.; CAMARDA, G.; HOSSAIN, A.; KIM, K.H.; YANG, G.; GUL, R.; CUI, Y.; AND JAMES, R.B.

2011-10-23T23:59:59.000Z

303

Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction  

E-Print Network (OSTI)

High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

Zhaoquan Zeng; Timothy A. Morgan; Dongsheng Fan; Chen Li; Yusuke Hirono; Xian Hu; Yanfei Zhao; Joon Sue Lee; Zhiming M. Wang; Jian Wang; Shuiqing Yu; Michael E. Hawkridge; Mourad Benamara; Gregory J. Salamo

2013-01-03T23:59:59.000Z

304

Development of a Total Energy, Environment and Asset Management (TE2AM tm) Curriculum  

Science Conference Proceedings (OSTI)

The University of Wisconsin Department of Engineering Professional Development (EPD) has completed the sponsored project entitled, Development of a Total Energy, Environment and Asset Management (TE2AM™) Curriculum. The project involved the development of a structured professional development program to improve the knowledge, skills, capabilities, and competencies of engineers and operators of commercial buildings. TE2AM™ advances a radically different approach to commercial building design, operation, maintenance, and end-­?of-­?life disposition. By employing asset management principles to the lifecycle of a commercial building, owners and occupants will realize improved building performance, reduced energy consumption and positive environmental impacts. Through our commercialization plan, we intend to offer TE2AM™ courses and certificates to the professional community and continuously improve TE2AM™ course materials. The TE2AM™ project supports the DOE Strategic Theme 1 -­? Energy Security; and will further advance the DOE Strategic Goal 1.4 Energy Productivity. Through participation in the TE2AM™ curriculum, engineers and operators of commercial buildings will be eligible for a professional certificate; denoting the completion of a prescribed series of learning activities. The project involved a comprehensive, rigorous approach to curriculum development, and accomplished the following goals: 1. Identify, analyze and prioritize key learning needs of engineers, architects and technical professionals as operators of commercial buildings. 2. Design and develop TE2AM™ curricula and instructional strategies to meet learning needs of the target learning community. 3. Establish partnerships with the sponsor and key stakeholders to enhance the development and delivery of learning programs. 4. Successfully commercialize and sustain the training and certificate programs for a substantial time following the term of the award. The project team was successful in achieving the goals and deliverables set forth in the original proposal. Though attempts were made to adhere to the original project timeline, the team requested, and was granted a 6-­?month project extension, during which time the project was completed.

None

2012-12-31T23:59:59.000Z

305

A Search for a Light Charged Higgs Boson Decaying to cs at ?s = 7 TeV.  

E-Print Network (OSTI)

??A search for a light charged Higgs boson decaying into cs is presented using data recorded in pp collisions at ?s = 7 TeV. The… (more)

Martyniuk, Alex Christopher

2011-01-01T23:59:59.000Z

306

Analysis of Alternate Methods to Obtain Stabilized Power Performance of CdTe and CIGS PV Modules (Presentation)  

DOE Green Energy (OSTI)

This presentation outlines an analysis of alternate methods to obtain stabilized power performance of CdTe and CIGS PV modules.

del Cueto, J. A.; Deline, C. A.; Rummel, S.

2011-02-01T23:59:59.000Z

307

Exploring alternative symmetry breaking mechanisms at the LHC with 7, 8 and 10 TeV total energy  

E-Print Network (OSTI)

In view of the annnouncement that in 2012 the LHC will run at 8 TeV, we study the possibility of detecting signals of alternative mechanisms of ElectroWeak Symmetry Breaking, described phenomenologically by unitarized models, at energies lower than 14 TeV. A complete calculation with six fermions in the final state is performed using the PHANTOM event generator. Our results indicate that at 8 TeV some of the scenarios with TeV scale resonances are likely to be identified while models with no resonances or with very heavy ones will be inaccessible, unless the available luminosity will be much higher than expected.

Alessandro Ballestrero; Diogo Buarque Franzosi; Ezio Maina

2012-03-13T23:59:59.000Z

308

T-641: Oracle Java SE Critical Patch Update Advisory - June 2011 |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1: Oracle Java SE Critical Patch Update Advisory - June 2011 1: Oracle Java SE Critical Patch Update Advisory - June 2011 T-641: Oracle Java SE Critical Patch Update Advisory - June 2011 June 8, 2011 - 12:26pm Addthis PROBLEM: Oracle Java SE Critical Patch Update Advisory - June 2011 PLATFORM: JDK and JRE 6 Update 25 and earlier, Java SE, JDK 5.0 Update 29 and earlier Java SE, SDK 1.4.2_31 and earlier ABSTRACT: This Critical Patch Update contains 17 new security fixes for Oracle Java SE - 5 apply to client and server deployments of Java SE, 11 apply to client deployments of Java SE only, and 1 applies to server deployments of Java SE only. All of these vulnerabilities may be remotely exploitable without authentication, i.e., may be exploited over a network without the need for a username and password. Oracle CVSS scores assume that a user running a Java applet or Java Web

309

T-641: Oracle Java SE Critical Patch Update Advisory - June 2011 |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

41: Oracle Java SE Critical Patch Update Advisory - June 2011 41: Oracle Java SE Critical Patch Update Advisory - June 2011 T-641: Oracle Java SE Critical Patch Update Advisory - June 2011 June 8, 2011 - 12:26pm Addthis PROBLEM: Oracle Java SE Critical Patch Update Advisory - June 2011 PLATFORM: JDK and JRE 6 Update 25 and earlier, Java SE, JDK 5.0 Update 29 and earlier Java SE, SDK 1.4.2_31 and earlier ABSTRACT: This Critical Patch Update contains 17 new security fixes for Oracle Java SE - 5 apply to client and server deployments of Java SE, 11 apply to client deployments of Java SE only, and 1 applies to server deployments of Java SE only. All of these vulnerabilities may be remotely exploitable without authentication, i.e., may be exploited over a network without the need for a username and password. Oracle CVSS scores assume that a user running a Java applet or Java Web

310

Component Overpressure Growth and Characterization of High Resistivity CdTe Crystals for Radiation Detectors  

Science Conference Proceedings (OSTI)

Spectrometer-grade CdTe single crystals with resistivities higher than 10{sup 9} {Omega} cm have been grown by the modified Bridgman method using zone-refined precursor materials (Cd and Te) under a Cd overpressure. The grown CdTe crystals had good charge-transport properties ({mu}{tau}{sub e} = 2 x 10{sup -3} cm{sup 2} V{sup -1}, {mu}{tau}{sub h} = 8 x 10{sup -5} cm{sup 2} V{sup -1}) and significantly reduced Te precipitates compared with crystals grown without Cd overpressure. The crystal growth conditions for the Bridgman system were optimized by computer modeling and simulation, using modified MASTRAPP program, and applied to crystal diameters of 14 mm (0.55'), 38 mm (1.5'), and 76 mm (3'). Details of the CdTe crystal growth operation, structural, electrical, and optical characterization measurements, detector fabrication, and testing using {sup 241}Am (60 keV) and {sup 137}Cs (662 keV) sources are presented.

Mandal, Krishna [EIC Laboratories, Inc.; Kang, Sung Hoon [EIC Laboratories, Inc.; Choi, Michael [EIC Laboratories, Inc.; Wei, Jiuan [State University of New York, Stony Brook; Zheng, Lili [State University of New York, Stony Brook; Zhang, Hui [State University of New York, Stony Brook; Jellison Jr, Gerald Earle [ORNL; Groza, Michael [Fisk University, Nashville, TN; Burger, Arnold [Fisk University, Nashville, TN

2007-01-01T23:59:59.000Z

311

Experiments Involving Correlations Between CdTe Solar Cell Fabrication History and Intrinsic Device Stability  

DOE Green Energy (OSTI)

An orthogonal full-factorial design was used to study the effect of CdS and CdTe layer thickness, oxygen ambient during vapor CdCl2 (VCC) and the use of nitric-phosphoric (NP) acid as a pre-contact etch on the initial and stressed performance of CdS/CdTe small-area devices. The best initial device efficiency (using thinner CdS, thicker CdTe, no oxygen during VCC, and NP etch) also showed poor stability. Increasing the CdS thickness significantly improved stability with only a slight decrease in resulting initial performance. All devices used a thin margin of CdTe around the perimeter of the backcontact that was shown to significantly reduce catastrophic degradation and improve overall test statistics. The latter degradation is modeled by the formation of a weak-diode/low shunt resistance localized near the edge of finished devices. This shunting is believed to occur through the CdS/CdTe interface, rather than along the device edge, and is exacerbated by thinner CdS films.

Albin, D.; McMahon, T.; Berniard, T.; Pankow, J.; Demtsu, S.; Noufi, R.

2005-02-01T23:59:59.000Z

312

Investigation of the Charge Collection Efficiency of CdMnTe Radiation Detectors  

SciTech Connect

This paper presents the growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe) crystals grown by the vertical Bridgman technique. The 10 x 10 x 1.9 mm{sup 3} samples have been fabricated, and the charge collection properties of the CdMnTe detectors have been measured. Alpha-particle spectroscopy measurements have yielded an average charge collection efficiency approaching 100%. Ion beam induced charge (IBIC) measurements have been performed by raster scanning focused 5.5 MeV {sup 4}He beams onto the detectors. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of Te inclusions within the detector bulk, and the reduction in charge collection efficiency in their locality has been quantified. It has been shown that the role of Te inclusions in degrading charge collection is reduced with increasing values of bias voltage. IBIC measurements for a range of low biases have highlighted the evolution of the charge collection uniformity across the detectors.

Bolotnikov A.; Rafiei, R.; Boardman, D.; Sarbutt, A.; Prokopovich, A.; Kim, K.; Reinhard, M.I.; James, R.B.

2012-06-01T23:59:59.000Z

313

A Search for TeV Gamma-Ray Burst Emission with the Milagro Observatory  

E-Print Network (OSTI)

The Milagro telescope monitors the northern sky for 100 GeV - 100 TeV transient emission through continuous very high energy wide-field observations. The large effective area and low energy threshold of Milagro allow it to detect very high energy gamma-ray burst emission with much higher sensitivity than previous instruments, and a fluence sensitivity at TeV energies comparable to dedicated gamma-ray burst satellites at keV-MeV energies. Observation of gamma-ray burst emission at TeV energies could place important constraints on gamma-ray burst progenitor and emission models. This study details the development of a weighted analysis technique; the implementation of this technique to perform a real time search for TeV transients of 40 seconds to 3 hours duration in the Milagro data; and the results from more than one year of observation. Between May 2nd, 2001, and May 22nd, 2002, no TeV transients of 40 seconds to 3 hours duration were observed. Upper limits on both observed and emitted high energy gamma-ray burst emission are presented.

Miguel F. Morales

2003-08-06T23:59:59.000Z

314

An Experiment to Locate the Site of TeV Flaring in M87  

SciTech Connect

We describe a Chandra X-ray target-of-opportunity project designed to isolate the site of TeV flaring in the radio galaxy M87. To date, we have triggered the Chandra observations only once (2010 April) and by the time of the first of our nine observations, the TeV flare had ended. However, we found that the X-ray intensity of the unresolved nucleus was at an elevated level for our first observation. Of the more than 60 Chandra observations we have made of the M87 jet covering nine years, the nucleus was measured at a comparably high level only three times. Two of these occasions can be associated with TeV flaring, and at the time of the third event, there were no TeV monitoring activities. From the rapidity of the intensity drop of the nucleus, we infer that the size of the emitting region is of order a few light days x the unknown beaming factor; comparable to the same sort of estimate for the TeV emitting region. We also find evidence of spectral evolution in the X-ray band which seems consistent with radiative losses affecting the non-thermal population of the emitting electrons within the unresolved nucleus.

Harris, D.E.; /Harvard-Smithsonian Ctr. Astrophys.; Massaro, F.; /Harvard-Smithsonian Ctr. Astrophys. /KIPAC, Menlo Park /SLAC; Cheung, C.C.; /Natl. Acad. Sci. /Naval Research Lab, Wash., D.C.; Horns, D.; Raue, M.; /Hamburg U.; Stawarz, L.; /JAXA, Sagamihara /Jagiellonian U., Astron. Observ.; Wagner, S.; /Heidelberg Observ.; Colin, P.; /Munich, Max Planck Inst.; Mazin, D.; /Barcelona, IFAE; Wagner, R.; /Munich, Max Planck Inst.; Beilicke, M.; /McDonnell Ctr. Space Sci.; LeBohec, S.; Hui, M.; /Utah U.; Mukherjee, R.; /Barnard Coll.

2012-05-18T23:59:59.000Z

315

Synthesis, crystal and electronic structure, and physical properties of the new lanthanum copper telluride La{sub 3}Cu{sub 5}Te{sub 7}  

SciTech Connect

The new lanthanum copper telluride La{sub 3}Cu{sub 5-x}Te{sub 7} has been obtained by annealing the elements at 1073 K. Single-crystal X-ray diffraction studies revealed that the title compound crystallizes in a new structure type, space group Pnma (no. 62) with lattice dimensions of a=8.2326(3) A, b=25.9466(9) A, c=7.3402(3) A, V=1567.9(1) A{sup 3}, Z=4 for La{sub 3}Cu{sub 4.86(4)}Te{sub 7}. The structure of La{sub 3}Cu{sub 5-x}Te{sub 7} is remarkably complex. The Cu and Te atoms build up a three-dimensional covalent network. The coordination polyhedra include trigonal LaTe{sub 6} prisms, capped trigonal LaTe{sub 7} prisms, CuTe{sub 4} tetrahedra, and CuTe{sub 3} pyramids. All Cu sites exhibit deficiencies of various extents. Electrical property measurements on a sintered pellet of La{sub 3}Cu{sub 4.86}Te{sub 7} indicate that it is a p-type semiconductor in accordance with the electronic structure calculations. -- Graphical abstract: Oligomeric unit comprising interconnected CuTe{sub 3} pyramids and CuTe{sub 4} tetrahedra. Display Omitted Research highlights: {yields} La{sub 3}Cu{sub 5-x}Te{sub 7} adopts a new structure type. {yields} All Cu sites exhibit deficiencies of various extents. {yields} The coordination polyhedra include trigonal LaTe{sub 6} prisms, capped trigonal LaTe{sub 7} prisms, CuTe{sub 4} tetrahedra and CuTe{sub 3} pyramids. {yields} La{sub 3}Cu{sub 5-x}Te{sub 7} is a p-type semiconductor.

Zelinska, Mariya; Assoud, Abdeljalil [Department of Chemistry, University of Waterloo, Waterloo, ON, Canada N2L 3G1 (Canada); Kleinke, Holger, E-mail: kleinke@uwaterloo.c [Department of Chemistry, University of Waterloo, Waterloo, ON, Canada N2L 3G1 (Canada)

2011-03-15T23:59:59.000Z

316

Suzanne G.E. te Velthuis - Argonne National Laboratories, Materials Sicence  

NLE Websites -- All DOE Office Websites (Extended Search)

NXRS > Suzanne G.E. te Velthuis NXRS > Suzanne G.E. te Velthuis Suzanne G.E. te Velthuis Physicist Bldg. 223, B-205 Phone 630-252-1075 This e-mail address is being protected from spambots. You need JavaScript enabled to view it. Quick Links Selected Publications Selected Invited Talks Present Position Physicist, Materials Science Division, Argonne National Laboratory (2005-Present). Education Ph.D. Degree, Deft University of Technology, The Netherlands (1999). Masters Degree in Applied Physics, Eindhoven University of Technology, The Netherlands (1993). Professional Expirence Assistant Scientist, Materials Science Division, Argonne National Laboratory, (2001-2005). Post-doctoral Scientist, Intense Pulsed Neutron Source, Argonne National Laboratory (1999-2001). Researcher in training (leading to PhD degree), Delft University of Technology, The Netherlands (1994 -1998).

317

Hybrid model of GeV-TeV gamma ray emission from Galactic Center  

E-Print Network (OSTI)

The observations of high energy $\\gamma$-ray emission from the Galactic center (GC) by HESS, and recently by Fermi, suggest the cosmic ray acceleration in the GC and possibly around the supermassive black hole. In this work we propose a lepton-hadron hybrid model to explain simultaneously the GeV-TeV $\\gamma$-ray emission. Both electrons and hadronic cosmic rays were accelerated during the past activity of the GC. Then these particles would diffuse outwards and interact with the interstellar gas and background radiation field. The collisions between hadronic cosmic rays with gas is responsible to the TeV $\\gamma$-ray emission detected by HESS. With fast cooling in the strong radiation field, the electrons would cool down and radiate GeV photons through inverse Compton scattering off the soft background photons. This scenario provides a natural explanation of the observed GeV-TeV spectral shape of $\\gamma$-rays.

Yi-Qing Guo; Qiang Yuan; Cheng Liu; Ai-Feng Li

2013-03-26T23:59:59.000Z

318

Experimental study of double-{beta} decay modes using a CdZnTe detector array  

SciTech Connect

An array of sixteen 1 cm{sup 3} CdZnTe semiconductor detectors was operated at the Gran Sasso Underground Laboratory (LNGS) to further investigate the feasibility of double-{beta} decay searches with such devices. As one of the double-{beta} decay experiments with the highest granularity the 4x4 array accumulated an overall exposure of 18 kg days. The setup and performance of the array is described. Half-life limits for various double-{beta} decay modes of Cd, Zn, and Te isotopes are obtained. No signal has been found, but several limits beyond 10{sup 20} years have been performed. They are an order of magnitude better than those obtained with this technology before and comparable to most other experimental approaches for the isotopes under investigation. An improved limit for the {beta}{sup +}/EC decay of {sup 120}Te is given.

Dawson, J. V. [Laboratoire Astroparticule et Cosmologie, 10 rue Alice Domon et Leonie Duquet, F-75205 Paris (France); Goessling, C.; Koettig, T.; Muenstermann, D.; Rajek, S.; Schulz, O. [Lehrstuhl fuer Experimentelle Physik IV, Technische Universitaet Dortmund, Otto-Hahn Str. 4, D-44227 Dortmund (Germany); Janutta, B.; Zuber, K. [Institut fuer Kern- und Teilchenphysik, Technische Universitaet Dresden, Zellescher Weg 19, D-01069 Dresden (Germany); Junker, M. [Laboratori Nazionali del Gran Sasso, Assergi (Italy); Reeve, C. [University of Sussex, Falmer, Brighton BN1 9QH (United Kingdom); Wilson, J. R. [University of Oxford, Denys Wilkinson Building, Keble Road, Oxford OX1 3RH (United Kingdom)

2009-08-15T23:59:59.000Z

319

Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2Te3  

SciTech Connect

Three-dimensional topological insulators are a new state of quantum matter with a bulk gap and odd number of relativistic Dirac fermions on the surface. By investigating the surface state of Bi{sub 2}Te{sub 3} with angle-resolved photoemission spectroscopy, we demonstrate that the surface state consists of a single nondegenerate Dirac cone. Furthermore, with appropriate hole doping, the Fermi level can be tuned to intersect only the surface states, indicating a full energy gap for the bulk states. Our results establish that Bi{sub 2}Te{sub 3} is a simple model system for the three-dimensional topological insulator with a single Dirac cone on the surface. The large bulk gap of Bi{sub 2}Te{sub 3} also points to promising potential for high-temperature spintronics applications.

Siemons, W.

2010-02-24T23:59:59.000Z

320

Energy spectrum of charge carriers in Ag{sub 2}Te  

Science Conference Proceedings (OSTI)

On the basis of investigations of the temperature and concentration dependences of kinetic coefficients (the Hall coefficientR, the electrical conductivity {sigma}, and thermopower {alpha}{sub 0}) in n-type Ag{sub 2}Te, it is established that Ag atoms in Ag{sub 2}Te create the shallow donor levels located at a distance of (0.002-7 x 10{sup -5}T) eV from the bottom of the conduction band. It is shown that silver telluride has n-type conductivity starting with the deficiency of Ag {>=} 0.01 at % in the stoichiometric composition, and it is practically impossible to achieve the stoichiometric composition in Ag{sub 2}Te.

Aliev, F. F., E-mail: farzali@physics.ab.az; Jafarov, M. B. [Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

2008-11-15T23:59:59.000Z

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321

Abidjan, Côte d'Ivoire: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Abidjan, Côte d'Ivoire: Energy Resources Abidjan, Côte d'Ivoire: Energy Resources Jump to: navigation, search Name Abidjan, Côte d'Ivoire Equivalent URI DBpedia GeoNames ID 2293538 Coordinates 5.341111°, -4.028056° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":5.341111,"lon":-4.028056,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

322

Advances in the In-House CdTe Research Activities at NREL  

DOE Green Energy (OSTI)

NREL in-house CdTe research activities have impacted a broad range of recent program priorities. Studies aimed at industrially relevant applications have produced new materials and processes that enhance the performance of devices based on commercial materials (e.g., soda-lime glass, SnO2:F). Preliminary tests of the effectiveness of these novel components using large-scale processes have been encouraging. Similarly, electro- and nano-probe techniques have been developed and used to study the evolution and function of CdTe grain boundaries. Finally, cathodoluminescence (CL) and photoluminescence (PL) studies on single-crystal samples have yielded improved understanding of how various processes may combine to produce important defects in CdTe films.

Gessert, T.; Wu, X.; Dhere, R.; Moutinho, H.; Smith, S.; Romero, M.; Zhou, J.; Duda, A.; Corwine, C.

2005-01-01T23:59:59.000Z

323

Spiral growth of topological insulator Sb{sub 2}Te{sub 3} nanoplates  

SciTech Connect

Sb{sub 2}Te{sub 3} nanoplates synthesized by vapor phase deposition method have been systemically investigated employing atomic force microscopy, which exhibit regular spiral structures on the surface. The height of spiral steps is determined to be 1 nm corresponding to one quintuple layer, with an inter-step separation ranging from 500 nm to 1 {mu}m. Growth mechanism of spiral structures on the Sb{sub 2}Te{sub 3} nanoplate surface is elucidated, which can be applied to other layered materials with van der Waals epitaxy growth. The electrostatic properties of Sb{sub 2}Te{sub 3} nanoplates with spiral structures are also simultaneously characterized.

Hao Guolin; Qi Xiang; Fan Yinping; Xue Lin; Peng Xiangyang; Wei Xiaolin; Zhong Jianxin [Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Xiangtan University, Hunan 411105 (China) and Laboratory for Quantum Engineering and Micro-Nano Energy Technology and Faculty of Materials and Optoelectronic Physics, Xiangtan University, Hunan 411105 (China)] [Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Xiangtan University, Hunan 411105 (China) and Laboratory for Quantum Engineering and Micro-Nano Energy Technology and Faculty of Materials and Optoelectronic Physics, Xiangtan University, Hunan 411105 (China)

2013-01-07T23:59:59.000Z

324

Dark Current Transients in Thin-Film CdTe Solar Cells: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the Dark current transients measured by changing the voltage bias in a stepwise fashion on CdTe cells results in minutes-long transients after each step. Transients measured at room temperature are controlled by carrier trapping that corresponds to the well known voltage transient phenomena[1]. Transients measured on the same CdTe cell at elevated temperature (60C and 90C) show a much slower decay process. We associate this physical process with''shunt'' current paths induced with reverse bias and removed with forward bias. A different back contact process may produce an opposite voltage dependence. The lack of these transients may be required for the fabrication of ''stable'' thin-film CdTe solar cells.

McMahon, T. J.

2002-05-01T23:59:59.000Z

325

Z' Bosons, the NuTeV Anomaly, and the Higgs Boson Mass  

SciTech Connect

Fits to the precision electroweak data that include the NuTeV measurement are considered in family universal, anomaly free U(1) extensions of the Standard Model. In data sets from which the hadronic asymmetries are excluded, some of the Z{prime} models can double the predicted value of the Higgs boson mass, from {approx} 60 to {approx} 120 GeV, removing the tension with the LEP II lower bound, while also modestly improving the {chi}{sup 2} confidence level. The effect of the Z{prime} models on both m{sub H} and the {chi}{sup 2} confidence level is increased when the NuTeV measurement is included in the fit. Both the original NuTeV data and a revised estimate by the PDG are considered.

Chanowitz, Michael S

2009-03-03T23:59:59.000Z

326

High efficiency thin film CdTe and a-Si based solar cells  

DOE Green Energy (OSTI)

This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and {approximately}9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features and studied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdS{sub x}Te{sub 1{minus}x} films at 10 K and 300 K; collaborated with the National CdTe PV Team on (1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, (2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and (3) preparation of ZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdS{sub x}Te{sub 1{minus}x} alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, and triple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction top cell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure ({approximately}2 {times} 10{sup {minus}5} torr) was beneficial for growing high-quality films from ITO targets.

Compaan, A. D.; Deng, X.; Bohn, R. G.

2000-01-04T23:59:59.000Z

327

ZnTe:O phosphor development for x-ray imaging applications  

Science Conference Proceedings (OSTI)

An efficient ZnTe:O x-ray powder phosphor was prepared by a dry synthesis process using gaseous doping and etching medias. The x-ray luminescent properties were evaluated and compared to standard commercial phosphors exhibited an x-ray luminescent efficiency equivalent to 76% of Gd{sub 2}O{sub 2}S:Tb and an equal resolution of 2.5 lines/mm. In addition, the fast decay time, low afterglow, and superior spectral match to conventional charge-coupled devices-indicate that ZnTe:O is a very promising phosphor candidate for x-ray imaging applications.

Kang, Z.T.; Summers, C.J.; Menkara, H.; Wagner, B.K.; Durst, R.; Diawara, Y.; Mednikova, G.; Thorson, T. [Phosphor Technology Center of Excellence, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States); Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, Georgia 30332-0826 (United States); Bruker AXS 5465 East Cheryl Parkway, Madison Wisconson 53711 (United States)

2006-03-13T23:59:59.000Z

328

Ultrahigh Energy Cosmic Rays and Prompt TeV Gamma Rays from Gamma Ray Bursts  

E-Print Network (OSTI)

Gamma Ray Bursts (GRBs) have been proposed as one {\\it possible} class of sources of the Ultrahigh Energy Cosmic Ray (UHECR) events observed up to energies $\\gsim10^{20}\\ev$. The synchrotron radiation of the highest energy protons accelerated within the GRB source should produce gamma rays up to TeV energies. Here we briefly discuss the implications on the energetics of the GRB from the point of view of the detectability of the prompt TeV gamma rays of proton-synchrotron origin in GRBs in the up-coming ICECUBE muon detector in the south pole.

Pijushpani Bhattacharjee; Nayantara Gupta

2003-05-12T23:59:59.000Z

329

Adhesion effect of interface layers on pattern fabrication with GeSbTe as laser thermal lithography film  

Science Conference Proceedings (OSTI)

Adhesion of pattern structures is a very important issue in laser thermal lithography. In this paper, Si"3N"4 and ZnS-SiO"2 were investigated as interface layers to improve patterns' adhesion to substrate on pattern fabrication with Ge"2Sb"2Te"5 as laser ... Keywords: Adhesion, GeSbTe, Interface layers, Thermal lithography, Thin films, Wet etching

Changmeng Deng; Yongyou Geng; Yiqun Wu; Yang Wang; Jinsong Wei

2013-03-01T23:59:59.000Z

330

Advances in large-area Hg1-xCdxTe photovoltaic detectors for remote-sensing applications  

Science Conference Proceedings (OSTI)

State-of-the-art large-area photovoltaic (PV) detectors fabricated in HgCdTe grown by molecular beam epitaxy (MBE) have been demonstrated for the Crosstrack Infrared Sounder (CrIS) instrument. Large-area devices (1 mm in diameter) yielded excellent electrical ... Keywords: HgCdTe, crosstrack infrared sounder, molecular beam epitaxy (MBE), photovoltaic detectors, remote sensing

P. S. Wijewarnasuriya; M. Zandian; J. Phillips; D. Edwall; R. E. Dewames; G. Hildebrandt; J. Bajaj; J. M. Arias; A. I. D'Souza; F. Moore

2002-07-01T23:59:59.000Z

331

Fabrication and characterization of CdTe nano pattern on flexible substrates by nano imprinting and electrodeposition  

Science Conference Proceedings (OSTI)

Nano imprinting technology and the electrodeposition method were applied to make CdTe nano patterns on flexible substrates. An ammonia based aqueous solution was prepared at pH 10.7 and indium tin oxide (ITO)/polyethylene naphthalate (PEN) film with ... Keywords: CdTe nano pattern, Electrodeposition, Flexible substrate, Nano imprinting

Seungju Chun; Kang-Soo Han; Ju-Hyeon Shin; Heon Lee; Donghwan Kim

2010-11-01T23:59:59.000Z

332

Search for heavy narrow dilepton resonances in pp collisions at $\\sqrt{s}$ = 7 TeV and $\\sqrt{s}$ = 8 TeV  

E-Print Network (OSTI)

An updated search for heavy narrow resonances decaying to muon or electron pairs using the CMS detector is presented. Data samples from pp collisions at $\\sqrt{s}$ = 7 TeV and 8 TeV at the LHC, with integrated luminosities of up to 5.3 and 4.1 inverse femtobarns, respectively, are combined. No evidence for a heavy narrow resonance is observed. The analysis of the combined data sets excludes, at 95% confidence level, a Sequential Standard Model Z'$_{SSM}$ resonance lighter than 2590 GeV, a superstring-inspired Z'$_{\\psi}$ lighter than 2260 GeV, and Kaluza-Klein gravitons lighter than 2390 (2030) GeV, assuming that the coupling parameter $k/\\bar{M}_{Pl}$ is 0.10 (0.05). These are the most stringent limits to date.

Chatrchyan, Serguei; Sirunyan, Albert M; Tumasyan, Armen; Adam, Wolfgang; Aguilo, Ernest; Bergauer, Thomas; Dragicevic, Marko; Erö, Janos; Fabjan, Christian; Friedl, Markus; Fruehwirth, Rudolf; Ghete, Vasile Mihai; Hörmann, Natascha; Hrubec, Josef; Jeitler, Manfred; Kiesenhofer, Wolfgang; Knünz, Valentin; Krammer, Manfred; Krätschmer, Ilse; Liko, Dietrich; Mikulec, Ivan; Pernicka, Manfred; Rabady, Dinyar; Rahbaran, Babak; Rohringer, Christine; Rohringer, Herbert; Schöfbeck, Robert; Strauss, Josef; Taurok, Anton; Waltenberger, Wolfgang; Wulz, Claudia-Elisabeth; Mossolov, Vladimir; Shumeiko, Nikolai; Suarez Gonzalez, Juan; Bansal, Monika; Bansal, Sunil; Cornelis, Tom; De Wolf, Eddi A; Janssen, Xavier; Luyckx, Sten; Mucibello, Luca; Ochesanu, Silvia; Roland, Benoit; Rougny, Romain; Selvaggi, Michele; Van Haevermaet, Hans; Van Mechelen, Pierre; Van Remortel, Nick; Van Spilbeeck, Alex; Blekman, Freya; Blyweert, Stijn; D'Hondt, Jorgen; Gonzalez Suarez, Rebeca; Kalogeropoulos, Alexis; Maes, Michael; Olbrechts, Annik; Tavernier, Stefaan; Van Doninck, Walter; Van Mulders, Petra; Van Onsem, Gerrit Patrick; Villella, Ilaria; Clerbaux, Barbara; De Lentdecker, Gilles; Dero, Vincent; Gay, Arnaud; Hreus, Tomas; Léonard, Alexandre; Marage, Pierre Edouard; Mohammadi, Abdollah; Reis, Thomas; Thomas, Laurent; Vander Velde, Catherine; Vanlaer, Pascal; Wang, Jian; Adler, Volker; Beernaert, Kelly; Cimmino, Anna; Costantini, Silvia; Garcia, Guillaume; Grunewald, Martin; Klein, Benjamin; Lellouch, Jérémie; Marinov, Andrey; Mccartin, Joseph; Ocampo Rios, Alberto Andres; Ryckbosch, Dirk; Sigamani, Michael; Strobbe, Nadja; Thyssen, Filip; Tytgat, Michael; Walsh, Sinead; Yazgan, Efe; Zaganidis, Nicolas; Basegmez, Suzan; Bruno, Giacomo; Castello, Roberto; Ceard, Ludivine; Delaere, Christophe; Du Pree, Tristan; Favart, Denis; Forthomme, Laurent; Giammanco, Andrea; Hollar, Jonathan; Lemaitre, Vincent; Liao, Junhui; Militaru, Otilia; Nuttens, Claude; Pagano, Davide; Pin, Arnaud; Piotrzkowski, Krzysztof; Vizan Garcia, Jesus Manuel; Beliy, Nikita; Caebergs, Thierry; Daubie, Evelyne; Hammad, Gregory Habib; Alves, Gilvan; Correa Martins Junior, Marcos; Martins, Thiago; Pol, Maria Elena; Henrique Gomes E Souza, Moacyr; Aldá Júnior, Walter Luiz; Carvalho, Wagner; Custódio, Analu; Da Costa, Eliza Melo; De Jesus Damiao, Dilson; De Oliveira Martins, Carley; Fonseca De Souza, Sandro; Malbouisson, Helena; Malek, Magdalena; Matos Figueiredo, Diego; Mundim, Luiz; Nogima, Helio; Prado Da Silva, Wanda Lucia; Santoro, Alberto; Soares Jorge, Luana; Sznajder, Andre; Vilela Pereira, Antonio; Souza Dos Anjos, Tiago; Bernardes, Cesar Augusto; De Almeida Dias, Flavia; Tomei, Thiago; De Moraes Gregores, Eduardo; Lagana, Caio; Da Cunha Marinho, Franciole; Mercadante, Pedro G; Novaes, Sergio F; Padula, Sandra; Genchev, Vladimir; Iaydjiev, Plamen; Piperov, Stefan; Rodozov, Mircho; Stoykova, Stefka; Sultanov, Georgi; Tcholakov, Vanio; Trayanov, Rumen; Vutova, Mariana; Dimitrov, Anton; Hadjiiska, Roumyana; Kozhuharov, Venelin; Litov, Leander; Pavlov, Borislav; Petkov, Peicho; Bian, Jian-Guo; Chen, Guo-Ming; Chen, He-Sheng; Jiang, Chun-Hua; Liang, Dong; Liang, Song; Meng, Xiangwei; Tao, Junquan; Wang, Jian; Wang, Xianyou; Wang, Zheng; Xiao, Hong; Xu, Ming; Zang, Jingjing; Zhang, Zhen; Asawatangtrakuldee, Chayanit; Ban, Yong; Guo, Yifei; Li, Wenbo; Liu, Shuai; Mao, Yajun; Qian, Si-Jin; Teng, Haiyun; Wang, Dayong; Zhang, Linlin; Zou, Wei; Avila, Carlos; Carrillo Montoya, Camilo Andres; Gomez, Juan Pablo; Gomez Moreno, Bernardo; Osorio Oliveros, Andres Felipe; Sanabria, Juan Carlos; Godinovic, Nikola; Lelas, Damir; Plestina, Roko; Polic, Dunja; Puljak, Ivica; Antunovic, Zeljko; Kovac, Marko; Brigljevic, Vuko; Duric, Senka; Kadija, Kreso; Luetic, Jelena; Mekterovic, Darko; Morovic, Srecko; Tikvica, Lucija; Attikis, Alexandros; Galanti, Mario; Mavromanolakis, Georgios; Mousa, Jehad; Nicolaou, Charalambos; Ptochos, Fotios; Razis, Panos A; Finger, Miroslav; Finger Jr, Michael; Assran, Yasser; Elgammal, Sherif; Ellithi Kamel, Ali; Kuotb Awad, Alaa Metwaly; Mahmoud, Mohammed; Radi, Amr; Kadastik, Mario; Müntel, Mait; Murumaa, Marion; Raidal, Martti; Rebane, Liis; Tiko, Andres; Eerola, Paula; Fedi, Giacomo; Voutilainen, Mikko; Härkönen, Jaakko; Heikkinen, Mika Aatos; Karimäki, Veikko; Kinnunen, Ritva; Kortelainen, Matti J; Lampén, Tapio; Lassila-Perini, Kati; Lehti, Sami; Lindén, Tomas; Luukka, Panja-Riina; Mäenpää, Teppo; Peltola, Timo; Tuominen, Eija; Tuominiemi, Jorma; Tuovinen, Esa; Ungaro, Donatella; Wendland, Lauri; Korpela, Arja; Tuuva, Tuure

2013-01-01T23:59:59.000Z

333

Search for heavy narrow dilepton resonances in pp collisions at sqrt(s) = 7 TeV and sqrt(s) = 8 TeV  

E-Print Network (OSTI)

An updated search for heavy narrow resonances decaying to muon or electron pairs using the CMS detector is presented. Data samples from pp collisions at sqrt(s) = 7 TeV and 8 TeV at the LHC, with integrated luminosities of up to 5.3 and 4.1 inverse femtobarns, respectively, are combined. No evidence for a heavy narrow resonance is observed. The analysis of the combined data sets excludes, at 95% confidence level, a Sequential Standard Model Z'[SSM] resonance lighter than 2590 GeV, a superstring-inspired Z'[psi] lighter than 2260 GeV, and Kaluza-Klein gravitons lighter than 2390 (2030) GeV, assuming that the coupling parameter k/M-bar[Pl] is 0.10 (0.05). These are the most stringent limits to date.

CMS Collaboration

2012-12-26T23:59:59.000Z

334

Preparation and properties of evaporated CdTe films compared with single-crystal CdTe. Progress report No. 5, November 1, 1981-January 31, 1982  

DOE Green Energy (OSTI)

The hot-wall vacuum evaporator system has been put into use with successful deposition of seven thin films of n-type CdTe on glass. Microprobe analysis indicated that the films were stoichiometric CdTe. Optical transmission showed a well-defined absorption edge. Film resistivities on glass were reduced from 1.7 x 10/sup 8/ ohm-cm, to 6 x 10/sup 4/ ohm-cm by In doping; film resistivities under AM1.5 illumination are 2.0 x 10/sup 4/ and 5 x 10/sup 2/ ohm-cm, respectively compared to the dark values given above. Temperature dependence of the dark conductivity of the undoped CdTe film indicates an activation energy of 0.79 eV; in the light the activation energy was reduced to 0.1 eV. The high dark resistivity and activation energy indicate high intergrain potential barriers, which could produce the high resistivities observed even with fairly high free electron densities in the grains. Comparison will be sought between these results and those found for films deposited epitaxially on single crystal substrates. A detailed summary of absorption constant vs wavelength data for CdTe has been assembled for both single crystal and thin film materials. The absorption constant for thin film material appears to vary from 2 x 10/sup 4/ cm/sup -1/ at 8000A to 10/sup 5/ cm/sup -1/ at 5000A; single crystal values may be slightly higher. EBIC and light scanning techniques are being developed for characterizing grain boundary effects in bicrystals, and to evaluate the effects of passivation techniques. Defect densities at a grain boundary in a p-type bicrystal were found to range from 2 x 10/sup 12/ to 8 x 10/sup 12/ cm/sup -2/eV/sup -1/, using data derived from the J-V dependence of the grain boundary.

Bube, R H

1982-01-01T23:59:59.000Z

335

Sb[subscript 2]Te[subscript 3] and Bi[subscript 2]Te[subscript 3] Thin Films Grown by Room-Temperature MBE  

Science Conference Proceedings (OSTI)

Sb{sub 2}Te3 and Bi{sub 2}Te3 thin films were grown on SiO{sub 2} and BaF{sub 2} substrates at room temperature using molecular beam epitaxy. Metallic layers with thicknesses of 0.2 nm were alternately deposited at room temperature, and the films were subsequently annealed at 250 C for 2 h. x-Ray diffraction and energy-filtered transmission electron microscopy (TEM) combined with high-accuracy energy-dispersive x-ray spectrometry revealed stoichiometric films, grain sizes of less than 500 nm, and a texture. High-quality in-plane thermoelectric properties were obtained for Sb{sub 2}Te3 films at room temperature, i.e., low charge carrier density (2.6 x 10{sup 19} cm{sup -3}, large thermopower (130 {micro}V K{sup -1}), large charge carrier mobility (402 cm{sup 2} V{sup -1} s{sup -1}), and resulting large power factor (29 {micro}W cm{sup -1} K{sup -2}). Bi{sub 2}Te3 films also showed low charge carrier density (2.7 x 10{sup 19} cm{sup -3}), moderate thermopower (-153 {micro}V K{sup -1}), but very low charge carrier mobility (80 cm{sup 2} V{sup -1} s{sup -1}), yielding low power factor (8 {micro}W cm{sup -1} K{sup -2}). The low mobilities were attributed to Bi-rich grain boundary phases identified by analytical energy-filtered TEM.

Aabdin, Z.; Peranio, N.; Winkler, M.; Bessas, D.; König, J.; Hermann, R.P.; Böttner, H.; Eibl, O. (Julich); (Tubingen); (Fraunhofer)

2012-10-23T23:59:59.000Z

336

The comprehensive phase evolution for Bi[subscript 2]Te[subscript 3] topological compound as function of pressure  

Science Conference Proceedings (OSTI)

The recently discovered three-dimensional topological insulator Bi{sub 2}Te{sub 3} is studied as function of pressure in terms of crystal structures, resistance, and Hall coefficient. The superconductivity is found in phase I (ambient phase) Bi{sub 2}Te{sub 3} with T{sub c}-3 K, which is related to the topological features. The evolution of crystal structure with pressure is investigated by high pressure synchrotron radiation experiments that reveal structural transitions occurring at about 8 GPa, 13 GPa, and 16 GPa, respectively. Furthermore, the high pressure phases of Bi{sub 2}Te{sub 3} are also superconducting but with much higher T{sub c}-8 K. The superconducting transitions are compared with those for Bi, Te elements. A global phase diagram of Bi{sub 2}Te{sub 3} as function of pressure up to 30 GPa is obtained.

Zhang, S.J.; Zhang, J.L.; Yu, X.H.; Zhu, J.; Kong, P.P.; Feng, S.M.; Liu, Q.Q.; Yang, L.X.; Wang, X.C.; Cao, L.Z.; Yang, W.G.; Wang, L.; Mao, H.K.; Zhao, Y.S.; Liu, H.Z.; Dai, X.; Fang, Z.; Zhang, S.C.; Jin, C.Q. (Stanford); (Harbin); (UST - China); (CIW); (Chinese Aca. Sci.); (LANL)

2012-06-26T23:59:59.000Z

337

Coherent optical phonon spectroscopy studies of femtosecond-laser modified Sb{sub 2}Te{sub 3} films  

Science Conference Proceedings (OSTI)

We performed time-resolved reflectivity measurements to monitor changes in optical phonon modes in Sb{sub 2}Te{sub 3} thin films under femtosecond laser irradiation. We found that a phonon mode at 3.64 THz appears after high-fluence laser irradiation, in addition to the phonon modes of Sb{sub 2}Te{sub 3}. We determined that the additional mode is due to Te segregation as a result of laser-induced decomposition of the Sb{sub 2}Te{sub 3} film. This experiment clearly illustrates the irreversible effects of femtosecond laser irradiation during the measurement of coherent optical phonon dynamics in Sb{sub 2}Te{sub 3}.

Li Yuwei; Wang Guoyu [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States); Center for Solar and Thermal Energy Conversion, University of Michigan, Michigan 48109 (United States); Stoica, Vladimir A. [Center for Solar and Thermal Energy Conversion, University of Michigan, Michigan 48109 (United States); Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109 (United States); Endicott, Lynn [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States); Uher, Ctirad; Clarke, Roy [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States); Center for Solar and Thermal Energy Conversion, University of Michigan, Michigan 48109 (United States); Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2010-10-25T23:59:59.000Z

338

Secretary Chu to Lead Delegation to SE4All, CEM Conferences in London |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Secretary Chu to Lead Delegation to SE4All, CEM Conferences in Secretary Chu to Lead Delegation to SE4All, CEM Conferences in London Secretary Chu to Lead Delegation to SE4All, CEM Conferences in London April 9, 2012 - 10:13am Addthis WASHINGTON, DC - Later this month, U.S. Energy Secretary Steven Chu will join Energy Ministers from the world's leading economies in London for the UN Sustainable Energy for All (SE4All) conference and the Clean Energy Ministerial (CEM3). CEM3 and SE4All will hold a joint press conference on April 26, 2012, to announce outcomes from the ministerial and release the SE4All Action Agenda. The High Level Group of SE4All will work to accelerate progress on critical clean energy priorities. SE4All's objectives are to double the global rate of improvement in energy efficiency, double the share of renewable

339

Secretary Chu to Lead Delegation to SE4All, CEM Conferences in London |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

SE4All, CEM Conferences in SE4All, CEM Conferences in London Secretary Chu to Lead Delegation to SE4All, CEM Conferences in London April 9, 2012 - 10:13am Addthis WASHINGTON, DC - Later this month, U.S. Energy Secretary Steven Chu will join Energy Ministers from the world's leading economies in London for the UN Sustainable Energy for All (SE4All) conference and the Clean Energy Ministerial (CEM3). CEM3 and SE4All will hold a joint press conference on April 26, 2012, to announce outcomes from the ministerial and release the SE4All Action Agenda. The High Level Group of SE4All will work to accelerate progress on critical clean energy priorities. SE4All's objectives are to double the global rate of improvement in energy efficiency, double the share of renewable energy in the global energy mix, and ensure universal access to modern

340

T-558: Oracle Java SE and Java for Business Critical Patch Update...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

8: Oracle Java SE and Java for Business Critical Patch Update Advisory - February 2011 T-558: Oracle Java SE and Java for Business Critical Patch Update Advisory - February 2011...

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Three approaches to economical photovoltaics: conformal Cu2S, organic luminescent films, and PbSe nanocrystal superlattices  

E-Print Network (OSTI)

upon CdS/CdTe solar cells. Solar Energy Materials and Solaron acrylic sheet. Solar Energy, 17(4):259 – 264, 1975. [77]heterojunctions for solar energy conversion. Materials

Carbone, Ian Anthony

2013-01-01T23:59:59.000Z

342

Aqueous synthesis and characterization of CdSe/ZnO core-shell nanoparticles  

Science Conference Proceedings (OSTI)

Core-shell nanomaterials based on CdSe as the core and ZnO as the shell were prepared using an aqueous route involving the use of Cd salt and NaBH4 in reaction with Se to generate CdSe in the presence of thioglycerol (TG) as a stabilizer. ...

B. P. Rakgalakane; M. J. Moloto

2011-01-01T23:59:59.000Z

343

Synthesis and characterization of blue emitting ZnSe quantum dots  

Science Conference Proceedings (OSTI)

In this work we show a new experimental methodology to obtain ZnSe nanocrystals in aqueous solution aiming their application as biophotonic probes. The nanocrystals were obtained using a simple procedure based on the arrested precipitation of ZnSe in ... Keywords: Blue emission, Colloidal synthesis, Water soluble quantum dots, ZnSe

J. J. Andrade; A. G. Brasil, Jr.; P. M. A. Farias; A. Fontes; B. S. Santos

2009-03-01T23:59:59.000Z

344

Photodeposition of Pt on Colloidal CdS and CdSe/CdS Semiconductor Nanostructures  

E-Print Network (OSTI)

on Colloidal CdS and CdSe/CdS Semiconductor Nanostructuresof Pt on colloidal CdS and CdSe/CdS core/shell nanocrystals.photoexcitation of CdS and CdSe/CdS in the presence of an

Dukovic, Gordana

2008-01-01T23:59:59.000Z

345

Overcoming degradation mechanisms in CdTe solar cells: First annual report, August 1998--August 1999  

DOE Green Energy (OSTI)

The authors have studied the importance of chemical processes for the stability of CdTe solar cells, in particular, diffusion in the ohmic contact/absorber junction regions. Both whole cells and test systems containing only the ohmic contact and the absorber are used. They found several experimental methods to be useable tools to follow the effects of impurity diffusion on the CdTe grain boundaries, grain bulk, and surface. In addition, they have explored alternative contacting schemes. The first year of activities led to the following tentative conclusions: Grain boundaries in CdTe/CdS cells are NOT fully passivated and are expected to be electrically active; There appears to be fast ionic diffusion in the vicinity of the Cu/HgTe/graphite back-contact, possibly enhanced by grain boundary diffusion; The macroscopic response to stress is different for cells with identical back-contact, but from different manufacturers. Different factors and/or different reactions to identical factors are possibly at work here; and Ni-P appears to be a promising back-contact material.

Cahen, D.; Gartsman, K.; Hodes, G.; Rotlevy, O.; Visoly-Fisher, I,; Dobson, K.

2000-02-28T23:59:59.000Z

346

Results from a search for the 0 {nu}{beta}{beta}-decay of {sup 130}Te  

SciTech Connect

A detailed description of the CUORICINO {sup 130}Te neutrinoless double-beta (0 {nu}{beta}{beta}) decay experiment is given and recent results are reported. CUORICINO is an array of 62 tellurium oxide (TeO{sub 2}) bolometers with an active mass of 40.7 kg. It is cooled to {approx}8-10 mK by a dilution refrigerator shielded from environmental radioactivity and energetic neutrons. It is running in the Laboratori Nazionali del Gran Sasso (LNGS) in Assergi, Italy. These data represent an exposure of 11.83 kg yr or 91 mole-years of {sup 130}Te. No evidence for 0 {nu}{beta}{beta}-decay was observed and a limit of T{sub 1/2}{sup 0} {sup {nu}}({sup 130}Te){>=}3.0x10{sup 24} y (90% CL) is set. This corresponds to an upper limit on the effective mass, , between 0.19 and 0.68 eV when analyzed with the many published nuclear structure calculations. In the context of these nuclear models, the values fall within the range corresponding to the claim of evidence of 0 {nu}{beta}{beta}-decay by H. V. Klapdor-Kleingrothaus et al. The experiment continues to acquire data.

Arnaboldi, C.; Brofferio, C.; Capelli, S.; Clemenza, M.; Fiorini, E.; Nucciotti, A.; Pavan, M.; Sisti, M. [Dipartimento di Fisica dell'Universita di Milano-Bicocca, I-20126 Milano (Italy); Sezione INFN di Milano-Bicocca, I-20126 Milano (Italy); Artusa, D. R.; Avignone III, F. T.; Bandac, I.; Creswick, R. J.; Farach, H. A.; Rosenfeld, C. [Department of Physics and Astronomy, University of South Carolina, Columbia, SC 29208 (United States); Balata, M.; Bucci, C.; Giachero, A.; Gorla, P.; Nisi, S. [INFN Laboratori Nazionali del Gran Sasso, I-67010, Assergi (L'Aquila) (Italy); Barucci, M. [Dipartimento di Fisica dell'Universita di Firenze, I-50019 Firenze (Italy); Sezione INFN di Firenze, I-50019, Firenze (Italy)] (and others)

2008-09-15T23:59:59.000Z

347

Physical properties of Ce3-xTe4 below room temperature  

Science Conference Proceedings (OSTI)

The physical properties of polycrystalline Ce{sub 3-x}Te{sub 4} were investigated by measurements of the thermoelectric properties, Hall coefficient, heat capacity, and magnetization. The fully filled, metallic x = 0 compound displays a soft ferromagnetic transition near 4 K, and analysis of the corresponding heat capacity anomaly suggests a doublet ground state for Ce{sup 3+}. The transition is suppressed to below 2 K in the insulating x = 0.33 composition, revealing that magnetic order in Ce{sub 3-x}Te{sub 4} is driven by a Ruderman-Kittel-Kasuya-Yosida (RKKY)-type interaction. The thermoelectric properties trend with composition as expected from simple electron counting, and the transport properties in Ce{sub 3}Te{sub 4} are observed to be similar to those in La{sub 3}Te{sub 4}. Trends in the low-temperature thermal conductivity data reveal that the phonons are efficiently scattered by electrons, while all compositions examined have a lattice thermal conductivity near 1.2 W/m K{sup -1} at 200 K.

May, Andrew F [ORNL; McGuire, Michael A [ORNL; Cantoni, Claudia [ORNL; Sales, Brian C [ORNL

2012-01-01T23:59:59.000Z

348

Degradation and Capacitance-Voltage Hysteresis in CdTe Devices: Preprint  

DOE Green Energy (OSTI)

CdS/CdTe cells on CTO/ZTO TCO show greater intial performance than SnO2-gased substrates due to superior optical and electrical properties of the oxide layers and more rigorous CdCl2 processing. Performance unfiormity was a problem.

Albin, D. S.; Dhere, R. G.; Glynn, S. C.; DelCueto, J.; Metzger W. K.

2009-07-01T23:59:59.000Z

349

p-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells  

E-Print Network (OSTI)

everything accelerates. ARCO solar produces more than 1 MW PV cells in `80, being the first in the world, the Million Solar Roofs in the US, and many more. Besides these programs, the efficiency of CdTe thin film PV energy source is the photovoltaic (PV) cell, which converts sunlight to electrical current, without any

Bieber, Michael

350

Room-temperature oxygen sensitization in highly textured, nanocrystalline PbTe films: A mechanistic study  

E-Print Network (OSTI)

In this paper, we report large mid-wave infrared photoconductivity in highly textured, nanocrystalline PbTe films thermally evaporated on Si at room temperature. Responsivity as high as 25 V/W is measured at the 3.5 ?m ...

Wang, Jianfei

351

Appendix B: CArBon dioxide CApture teChnology SheetS  

NLE Websites -- All DOE Office Websites (Extended Search)

B-54 Pre-Combustion membranes u.s. DePartment of energy aDvanCeD Carbon DioxiDe CaPture r&D Program: teChnology uPDate, may 2013 aDvanCeD hyDrogen transPort membranes for Coal...

352

Search for supersymmetric charged Higgs bosons at the TeVatron  

SciTech Connect

The data collected at the TeVatron RunIIa have been used to look for supersymmetric charged Higgs boson and Left-Right suspersymmetric doubly charged Higgs boson. No signal of such bosons has been found and this note reports on the current analyses and their observed excluded domains in models parameter space.

Grenier, Gerald; /Lyon, IPN

2007-10-01T23:59:59.000Z

353

Search for supersymmetric charged Higgs bosons at the TeVatron  

E-Print Network (OSTI)

The data collected at the TeVatron RunIIa have been used to look for supersymmetric charged Higgs boson and Left-Right suspersymmetric doubly charged Higgs boson. No signal of such bosons has been found and this note reports on the current analyses and their observed excluded domains in models parameter space.

Gerald Grenier

2007-10-03T23:59:59.000Z

354

Search for supersymmetric charged Higgs bosons at the TeVatron  

E-Print Network (OSTI)

The data collected at the TeVatron RunIIa have been used to look for supersymmetric charged Higgs boson and Left-Right suspersymmetric doubly charged Higgs boson. No signal of such bosons has been found and this note reports on the current analyses and their observed excluded domains in models parameter space.

Grenier, Gerald

2007-01-01T23:59:59.000Z

355

Accelerated Stress Testing and Diagnostic Analysis of Degradation in CdTe Solar Cells  

DOE Green Energy (OSTI)

The primary goal of this study was to ascertain the presence and types of mechanisms affecting CdS/CdTe device stability in the temperature range of 60 to 120 ..deg..C. It should be noted that the results presented were specific to cells made using the specific growth conditions described.

Albin, D. S.

2008-11-01T23:59:59.000Z

356

Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices: Preprint  

DOE Green Energy (OSTI)

We discuss typical and alternative procedures to analyze time-resolved photoluminescence (TRPL) measurements of minority carrier lifetime (MCL) with the hope of enhancing our understanding of how this technique may be used to better analyze CdTe photovoltaic (PV) device functionality. Historically, TRPL measurements of the fast recombination rate (t1) have provided insightful correlation with broad device functionality. However, we have more recently found that t1 does not correlate as well with smaller changes in device performance, nor does it correlate well with performance differences observed between superstrate and substrate CdTe PV devices. This study presents TRPL data for both superstrate and substrate CdTe devices where both t1 and the slower TRPL decay (t2) are analyzed. The study shows that changes in performance expected from small changes in device processing may correlate better with t2. Numerical modeling further suggests that, for devices that are expected to have similar drift field in the depletion region, effects of changes in bulk MCL and interface recombination should be more pronounced in t2. Although this technique may provide future guidance to improving CdS/CdTe device performance, it is often difficult to extract statistically precise values for t2, and therefore t2 data may demonstrate significant scatter when correlated with performance parameters.

Gessert, T. A.; Dhere, R. G.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Bergeson, J. D.

2011-07-01T23:59:59.000Z

357

Higgs Coupling Measurements at a 1 TeV Linear Collider  

SciTech Connect

Methods for extracting Higgs boson signals at a 1 TeV center-of-mass energy e{sup +}e{sup -} linear collider are described. In addition, estimates are given for the accuracy with which branching fractions can be measured for Higgs boson decays to b{bar b} WW, gg, and {gamma}{gamma}.

Barklow, T

2003-12-18T23:59:59.000Z

358

PyR@TE: Renormalization Group Equations for General Gauge Theories  

E-Print Network (OSTI)

Although the two-loop renormalization group equations for a general gauge field theory have been known for quite some time, deriving them for specific models has often been difficult in practice. This is mainly due to the fact that, albeit straightforward, the involved calculations are quite long, tedious and prone to error. The present work is an attempt to facilitate the practical use of the renormalization group equations in model building. To that end, we have developed two completely independent sets of programs written in Python and Mathematica, respectively. The Mathematica scripts will be part of an upcoming release of SARAH 4. The present article describes the collection of Python routines that we dubbed PyR@TE which is an acronym for "Python Renormalization group equations At Two-loop for Everyone". In PyR@TE, once the user specifies the gauge group and the particle content of the model, the routines automatically generate the full two-loop renormalization group equations for all (dimensionless and dimensionful) parameters. The results can optionally be exported to Latex and Mathematica, or stored in a Python data structure for further processing by other programs. For ease of use, we have implemented an interactive mode for PyR@TE in form of an IPython Notebook. As a first application, we have generated with PyR@TE the renormalization group equations for several non-supersymmetric extensions of the Standard Model and found some discrepancies with the existing literature.

Florian Lyonnet; Ingo Schienbein; Florian Staub; Akin Wingerter

2013-09-26T23:59:59.000Z

359

Appendix B: CArBon dioxide CApture teChnology SheetS  

NLE Websites -- All DOE Office Websites (Extended Search)

solvents B-6 Pre-Combustion solvents u.s. DePartment of energy aDvanCeD Carbon DioxiDe CaPture r&D Program: teChnology uPDate, may 2013 Co 2 CaPture from igCC gas streams using...

360

Polymorphic transformation in TlSe and the electrical properties of phases  

Science Conference Proceedings (OSTI)

Alloys in the TlSe-Se system on the side of the TlSe compound in the phase diagram have been investigated using differential thermal, X-ray powder diffraction, and microstructural analyses. The phase diagram of the system has been constructed, and the temperature dependences of the electrical conductivity of the phases obtained have been examined. An analysis of the thermograms of alloys in the (TlSe){sub 0.96}-Se{sub 0.04} system has revealed a structural phase transition at a temperature of 470 {+-} 1 K. Investigations into the temperature dependences of the electrical conductivity in the range 120-450 K have demonstrated that the temperature dependence of the electrical conductivity for the (TlSe){sub 0.96}-Se{sub 0.04} alloy exhibits metallic behavior.

Najafov, A. I. [Azerbaijan National Academy of Sciences, Institute of Radiation Problems (Azerbaijan); Guseinov, G. G.; Alekperov, O. Z. [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan); Sardarly, R. M., E-mail: sardarli@yahoo.com; Abdullaev, A. P.; Eyubova, N. A. [Azerbaijan National Academy of Sciences, Institute of Radiation Problems (Azerbaijan)

2008-09-15T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Elastic and surface energies: Two key parameters for CdSe quantum dot formation  

SciTech Connect

The two-dimensional-three-dimensional transition of a strained CdSe layer on (001) ZnSe induced by the use of amorphous selenium is studied. To precisely control the thickness of the CdSe layer, atomic layer epitaxy growth mode is used. Atomic force microscopy and reflection high-energy electron diffraction measurements reveal the formation of CdSe islands when 3 ML (monolayers) of CdSe, corresponding to the critical thickness, are deposited. When only 2.5 ML of CdSe are deposited another relaxation mechanism is observed, leading to the appearance of strong undulations on the surface. For a 3 ML thick CdSe layer, transmission electron microscopy images indicate that the formation of the islands occurs only after the amorphous selenium desorption.

Robin, Ivan-Christophe; Andre, Regis; Bougerol, Catherine; Aichele, Thomas; Tatarenko, Serge [Laboratoire de Spectrometrie Physique/CNRS UMR5588, Universite Joseph Fourier, Grenoble, BP87, 38402 St. Martin d'Heres (France)

2006-06-05T23:59:59.000Z

362

Method of synthesizing and growing copper-indium-diselenide (CuInSe.sub.2) crystals  

DOE Patents (OSTI)

A process for preparing CuInSe.sub.2 crystals includes melting a sufficient quantity of B.sub.2 O.sub.3 along with stoichiometric quantities of Cu, In, and Se in a crucible in a high pressure atmosphere of inert gas to encapsulate the CuInSe.sub.2 melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2 percent over the stoichiometric quantity is preferred to make up for small amounts of Se lost in the process. The crystal is grown by inserting a seed crystal through the B.sub.2 O.sub.3 encapsulate into contact with the CuInSe.sub.2 melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.

Ciszek, Theodore F. (Evergreen, CO)

1987-01-01T23:59:59.000Z

363

Design and Test of a 100MW X Band TE01 Window  

Science Conference Proceedings (OSTI)

Research at Stanford Linear Accelerator Center (SLAC) is in progress on a TeV-scale linear collider that will operate at 5-10 times the energy of present generation accelerators. This will require development of high power X-Band sources generating 50-100 MW per source. Conventional pillbox window designs are capable of transmitting peak rf powers up to about 30 MW, well below the desired level required for the use of a single window per tube. SLAC has developed a 75 MW TE{sub 01} window [1] that uses a 'traveling wave' design to minimize fields at the window face. Irises match to the dielectric window impedance, resulting in a pure traveling wave in the ceramic and minimum fields on the window face. The use of the TE{sub 01} mode also has zero electric field on the braze fillet. Unfortunately, in-band resonances prevented this window design from achieving the desired 75MW power level. It was believed the resonances resulted from sudden steps in the circular guide to match the 38mm input diameter to the overmoded (TE{sub 01} and TE{sub 02} mode propagating) 65 mm diameter of the window ceramic. Calabazas Creek Research Inc. is currently developing a traveling wave window using compact, numerically optimized, parabolic tapers to match the input diameter of 38mm to the window ceramic diameter of 76mm (Figure 1). The design is projected to handle 100 MW of pulse power with a peak field at the window face of 3.6 MV/m. Cold test of the window has shown the return loss to be better than -25 dB over a 100 MHz bandwidth and to be resonance free (Figure 2). The window is scheduled for high-power testing in July 2003 at the SLAC.

Neilson, J.; Ives, L.; Tantawi, S.G.; /Calabazas Creek Res., Saratoga /SLAC

2008-03-24T23:59:59.000Z

364

Novel ways of depositing ZnTe films by a solution growth technique. Final subcontract report, 1 January 1990--1 January 1992  

DOE Green Energy (OSTI)

An electrochemical process has been successfully developed for the reproducible deposition of ZnTe and copper-doped ZnTe films suitable as transparent ohmic contacts for CdS/CdTe solar cells. The development of this method and optimization of key processing steps in the fabrication of CdS/CdTe/ZnTe:Cu devices has allowed IEC to achieve cell performance results of FF>70% and {eta} {approximately}10%. Preliminary efforts have indicated that the deposition methods investigated are potentially feasible for the formation of other II-VI compounds for use in polycrystalline thin film solar devices and should be the focus of future work.

Birkmire, R.W.; McCandless, B.E.; Yokimcus, T.A.; Mondal, A. [Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion

1992-10-01T23:59:59.000Z

365

Band offsets for mismatched interfaces: The special case of ZnO on CdTe (001)  

SciTech Connect

High-quality planar interfaces between ZnO and CdTe would be useful in optoelectronic applications, but appear difficult to achieve given the rather different crystal structures (CdTe is zinc blende with cubic lattice constant a = 6.482 Å, ZnO is hexagonal wurtzite with a = 3.253 Å and c = 5.213 Å.) However, ZnO has been reported to occur in some epitaxially stabilized films in the zinc blende structure with an fcc primitive lattice constant close to the hexagonal a value. Observing that this value equals half of the CdTe cubic lattice constant to within 1%, we propose that (001)-oriented cubic ZnO films could be grown epitaxially on a CdTe (001) surface in an R45° ?2??2 configuration. Many terminations and alignments (in-plane fractional translations) are possible, and we describe density-functional total-energy electronic-structure calculations on several configurations to identify the most likely form of the interface, and to predict valence-band offsets between CdTe and ZnO in each case. Growth of ZnO on Te-terminated CdTe (001) is predicted to produce small or even negative (CdTe below ZnO) valence band offsets, resulting in a Type I band alignment. Growth on Cd-terminated CdTe is predicted to produce large positive offsets for a type II alignment as needed, for example, in solar cells. We also describe recent experiments that corroborate some of these predictions.

Jaffe, John E.; Kaspar, Tiffany C.; Droubay, Timothy; Varga, Tamas

2013-08-02T23:59:59.000Z

366

HKC-US: Proposed Penalty (2013-SE-33002) | Department of Energy  

NLE Websites -- All DOE Office Websites (Extended Search)

Proposed Penalty (2013-SE-33002) Proposed Penalty (2013-SE-33002) HKC-US: Proposed Penalty (2013-SE-33002) July 11, 2013 DOE alleged in a Notice of Proposed Civil Penalty that HKC-US, LLC failed to certify a ceiling fan light kit as compliant with the applicable energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. HKC-US: Proposed Penalty (2013-SE-33002) More Documents & Publications HKC-US: Order (2013-SE-33002) Royal Pacific: Proposed Penalty (2013-SE-33004) Excellence Opto: Proposed Penalty

367

U-105:Oracle Java SE Critical Patch Update Advisory | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

05:Oracle Java SE Critical Patch Update Advisory 05:Oracle Java SE Critical Patch Update Advisory U-105:Oracle Java SE Critical Patch Update Advisory February 16, 2012 - 11:45am Addthis PROBLEM: Oracle Java SE Critical Patch Update Advisory PLATFORM: 1.4.2_35 and prior, 5.0 Update 33 and prior; 6 Update 30 and prior; 7 Update 2 and prior ABSTRACT: Multiple vulnerabilities were reported in Oracle Java SE. A remote user can execute arbitrary code on the target system. A remote user can cause denial of service conditions. reference LINKS: Oracle Java SE Critical Patch Critical Patch Security Alerts SecurityTracker Alert ID: 1026688 Secunia Advisory: SA48009 Red Hat advisory IMPACT ASSESSMENT: High Discussion: A remote user can send specially crafted data to execute arbitrary code on the target system or cause complete denial of service conditions. The Java

368

ADVANCES IN SE-79 ANALYSES ON SAVANNAH RIVER SITE RADIOACTIVE WASTE MATRICES  

SciTech Connect

Waste cleanup efforts underway at the United States Department of Energy's (DOE) Savannah River Site (SRS) in South Carolina, as well as other DOE nuclear sites, have created a need to characterize {sup 79}Se in radioactive waste inventories. Successful analysis of {sup 79}Se in high activity waste matrices is challenging for a variety of reasons. As a result of these unique challenges, the successful quantification of {sup 79}Se in the types of matrices present at SRS requires an extremely efficient and selective separation of {sup 79}Se from high levels of interfering radionuclides. A robust {sup 79}Se radiochemical separation method has been developed at the Savannah River National Laboratory (SRNL) which is routinely capable of successfully purifying {sup 79}Se from a wide range of interfering radioactive species. In addition to a dramatic improvements in the Kd, ease, and reproducibility of the analysis, the laboratory time has been reduced from several days to only 6 hours.

Diprete, D; C Diprete, C; Ned Bibler, N; Cj Bannochie, C; Michael Hay, M

2009-03-16T23:59:59.000Z

369

U-105:Oracle Java SE Critical Patch Update Advisory | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5:Oracle Java SE Critical Patch Update Advisory 5:Oracle Java SE Critical Patch Update Advisory U-105:Oracle Java SE Critical Patch Update Advisory February 16, 2012 - 11:45am Addthis PROBLEM: Oracle Java SE Critical Patch Update Advisory PLATFORM: 1.4.2_35 and prior, 5.0 Update 33 and prior; 6 Update 30 and prior; 7 Update 2 and prior ABSTRACT: Multiple vulnerabilities were reported in Oracle Java SE. A remote user can execute arbitrary code on the target system. A remote user can cause denial of service conditions. reference LINKS: Oracle Java SE Critical Patch Critical Patch Security Alerts SecurityTracker Alert ID: 1026688 Secunia Advisory: SA48009 Red Hat advisory IMPACT ASSESSMENT: High Discussion: A remote user can send specially crafted data to execute arbitrary code on the target system or cause complete denial of service conditions. The Java

370

ARTIGO INTERNET Festival Internacional de Tunas "Cidade de Lisboa" realiza-se no sbado  

E-Print Network (OSTI)

NewsSearch ARTIGO INTERNET Festival Internacional de Tunas "Cidade de Lisboa" realiza-se no sábado Internacional de Tunas "Cidade de Lisboa" realiza-se no sábado As comemorações do 17.º aniversário da Tuna Internacional de Tunas "Cidade de Lisboa", que este ano se realiza no sábado, no Coliseu dos Recreios. Apesar de

Instituto de Sistemas e Robotica

371

Photovoltaic Devices Employing Ternary PbSxSe1-x Nanocrystals  

Science Conference Proceedings (OSTI)

We report solar cells based on highly confined nanocrystals of the ternary compound PbSxSe1-x. Crystalline, monodisperse alloyed nanocrystals are obtained using a one-pot, hot injection reaction. Rutherford back scattering and energy filtered transmission electron microscopy suggest that the S and Se anions are uniformly distributed in the alloy nanoparticles. Photovoltaic devices made using ternary nanoparticles are more efficient than either pure PbS or pure PbSe based nanocrystal devices.

Ma, Wanli; Luther, Joseph; Zheng, Haimei; Wu, Yue; Alivisatos, A. Paul

2009-02-05T23:59:59.000Z

372

Syntheses, crystal structures, and characterization of two new Tl{sup +}-Cu{sup 2+}-Te{sup 6+} oxides: Tl{sub 4}CuTeO{sub 6} and Tl{sub 6}CuTe{sub 2}O{sub 10}  

SciTech Connect

Crystals and polycrystalline powders of two new oxide materials, Tl{sub 4}CuTeO{sub 6} and Tl{sub 6}CuTe{sub 2}O{sub 10}, have been synthesized by hydrothermal and solid-state methods. The materials were structurally characterized by single-crystal X-ray diffraction. Tl{sub 4}CuTeO{sub 6} and Tl{sub 6}CuTe{sub 2}O{sub 10} exhibit one dimensional anionic slabs of [CuTeO{sub 6}]{sup 4-} and [CuTe{sub 2}O{sub 10}]{sup 6-}, respectively. Common to both slabs is the occurrence of Cu{sup 2+}O{sub 4} distorted squares and Te{sup 6+}O{sub 6} octahedra. The slabs are separated by Tl{sup +} cations. For Tl{sub 4}CuTeO{sub 6}, magnetic measurements indicate a maximum at {approx}8 K in the temperature dependence of the susceptibility. Low temperature neutron diffraction data confirm no long-range magnetic ordering occurs and the susceptibility was adequately accounted for by fits to a Heisenberg alternating chain model. For Tl{sub 6}CuTe{sub 2}O{sub 10} on the other hand, magnetic measurements revealed paramagnetism with no evidence of long-range magnetic ordering. Infrared, UV-vis spectra, thermogravimetric, and differential thermal analyses are also reported. Crystal data: Tl{sub 4}CuTeO{sub 6}, Triclinic, space group P-1 (No. 2), a=5.8629(8) A, b=8.7848(11) A, c=9.2572(12) A, {alpha}=66.0460(10), {beta}=74.2010(10), {gamma}=79.254(2), V=417.70(9) A{sup 3}, and Z=2; Tl{sub 6}CuTe{sub 2}O{sub 10}, orthorhombic, space group Pnma (No. 62), a=10.8628(6) A, b=11.4962(7) A, c=10.7238(6) A, V=1339.20(13) A{sup 3}, and Z=4. - Graphical Abstract: Two new oxide materials, Tl{sub 4}CuTeO{sub 6} and Tl{sub 6}CuTe{sub 2}O{sub 10}, have been synthesized and characterized. The materials exhibit one dimensional crystal structures consisting of CuO{sub 4} and TeO{sub 6} polyhedra. Highlights: Black-Right-Pointing-Pointer Two New Tl-Te-Cu-oxides have been synthesized and structurally characterized. Black-Right-Pointing-Pointer For Tl{sub 4}CuTeO{sub 6}, magnetic measurements indicate a maximum at {approx}8 K. Black-Right-Pointing-Pointer Low temperature neutron diffraction data confirm no long-range magnetic ordering. Black-Right-Pointing-Pointer For Tl{sub 6}CuTe{sub 2}O{sub 10} magnetic measurements revealed no long-range magnetic ordering.

Yeon, Jeongho; Kim, Sang-Hwan [Department of Chemistry, University of Houston, 136 Fleming Building, Houston, TX 77204-5003 (United States)] [Department of Chemistry, University of Houston, 136 Fleming Building, Houston, TX 77204-5003 (United States); Green, Mark A. [Department of Materials Science and Engineering, University of Maryland, College Park, MD, 20742-2115 and NIST Center for Neutron Research, National Institute of Standard and Technology, 100 Bureau Drive, Gaithersburg, MD 20899-6103 (United States)] [Department of Materials Science and Engineering, University of Maryland, College Park, MD, 20742-2115 and NIST Center for Neutron Research, National Institute of Standard and Technology, 100 Bureau Drive, Gaithersburg, MD 20899-6103 (United States); Bhatti, Kanwal Preet; Leighton, C. [Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455-0132 (United States)] [Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455-0132 (United States); Shiv Halasyamani, P., E-mail: psh@uh.edu [Department of Chemistry, University of Houston, 136 Fleming Building, Houston, TX 77204-5003 (United States)

2012-12-15T23:59:59.000Z

373

CdSe/ZnS Nanoparticle Composites with Amine-Functionalized Polyfluoren...  

NLE Websites -- All DOE Office Websites (Extended Search)

CdSeZnS Nanoparticle Composites with Amine-Functionalized Polyfluorene Derivatives for Polymeric Light-Emitting Diodes: Synthesis, Photophysical Properties, and the...

374

Direct Patterning of CdSe Quantum Dots into Sub-100 nm Structures  

SciTech Connect

Ordered, two-dimensional cadmium selenide (CdSe) arrays have been fabricated on indium-doped tin oxide (ITO) electrodes using the pattern replication in nonwetting templates (PRINT) process. CdSe quantum dots (QDs) with an average diameter of 2.7 nm and a pyridine surface ligand were used for patterning. The PRINT technique utilizes a perfluoropolyether (PFPE) elastomeric mold that is tolerant of most organic solvents, thus allowing solutions of CdSe QDs in 4-picoline to be used for patterning without significant deformation of the mold. Nanometer-scale diffraction gratings have been successfully replicated with CdSe QDs.

Hampton, Meredith J.; Templeton, Joseph L.; DeSimone, Joseph M.

2010-01-01T23:59:59.000Z

375

Fabrication and Characterization of Polycrystalline CuInSe 2 Thin ...  

Science Conference Proceedings (OSTI)

Symposium, Thin Film Structures for Energy Efficient Systems. Presentation Title, Fabrication and Characterization of Polycrystalline CuInSe2 Thin Film by ...

376

Direct Correlation of CdTe Solar Cell Stabiity with Mobile Ion Charge Generation During Accelerated Lifetime Testing: Preprint  

DOE Green Energy (OSTI)

CdS/CdTe cells deposited on CTO/ZTO TCO substrates show greater degradation than similar devices fabricated on cSnO2/iSnO2 substrates.

Albin, D. S.; Dhere, R. G.; Glynn, S. C.; Metzger, W. K.

2009-06-01T23:59:59.000Z

377

On 30 November, energy record for the LHC, twin beams at 1.18 TeV  

E-Print Network (OSTI)

Soon after midnight on November 30 the LHC beats its new world record with two beams ramped to 1.18 TeV simultaneously. The beams were dumped 45 minutes later.

CERN Photo Service

2009-01-01T23:59:59.000Z

378

Expanding the Limits of CdTe PV Performance: Phase I Annual Report, 7 February 2006 - 30 June 2007  

DOE Green Energy (OSTI)

First Solar made 9 CdTe PV devices; found two front- and one back-side structures that show improved Jsc and Voc, respectively, compared to base device structure; best cell efficiency was 14.13%.

Meyers, P.

2007-12-01T23:59:59.000Z

379

High efficiency thin film CdTe solar cells. Second quarterly progress report, June 19-September 18, 1979  

DOE Green Energy (OSTI)

During the second quarter of this program primary emphasis was put into depositing and evaluating both n and p-type CdTe films on a variety of conducting and non-conducting substrates. Improvements in the deposition apparatus permitted preparation of a large number of CdTe films and numerous analytic techniques available at Tufts University were utilized to examine these films. It was found that the introduction of a thin (100 A). In layer between the ITO and the CdTe significantly reduced the previously observed barrier present at the ITO/n-CdTe interface without adversely reducing optical transmission. While the resistivity of the films is still rather high, very recent results show that proper changes in procedure are capable of markedly lowering the resistivity. Preliminary Schottky barrier devices have been made which show promising photovoltaic characteristics.

Serreze, H.B.; Entine, G.; Goldner, R.B.

1979-10-01T23:59:59.000Z

380

Measurement of the W+W- Cross Section in ?s=7??TeV pp Collisions with ATLAS  

E-Print Network (OSTI)

This Letter presents a measurement of the W[superscript +]W[superscript -] production cross section in ?s=7??TeV pp collisions by the ATLAS experiment, using 34??pb[superscript -1] of integrated luminosity produced by the ...

Taylor, Frank E.

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Modeling Cu Migration in CdTe Solar Cells Under Device-Processing and Long-Term Stability Conditions (Poster)  

DOE Green Energy (OSTI)

An impurity migration model for systems with material interfaces is applied to Cu migration in CdTe solar cells. In the model, diffusion fluxes are calculated from the Cu chemical potential gradient. Inputs to the model include Cu diffusivities, solubilities, and segregation enthalpies in CdTe, CdS and contact materials. The model yields transient and equilibrium Cu distributions in CdTe devices during device processing and under field-deployed conditions. Preliminary results for Cu migration in CdTe PV devices using available diffusivity and solubility data from the literature show that Cu segregates in the CdS, a phenomenon that is commonly observed in devices after back-contact processing and/or stress conditions.

Teeter, G.; Asher, S.

2008-05-01T23:59:59.000Z

382

Low cost sprayed CdTe solar cell research. Second quarterly report, November 15, 1979-February 14, 1980  

DOE Green Energy (OSTI)

A comprehensive series of experiments was performed with the aim of optimizing parameters in the chemical spray deposition (CSD) of CdTe thin films. Two approaches have shown great promise. X-ray diffraction analysis has shown that CdTe can be produced from solutions containing CdCl/sub 2/ and (NH/sub 4/)TeO/sub 4/ with either hydrazine dihydrochloride or oxalic acid as the reducing agent. Films produced from the oxalic acid experiments have yielded encouraging infrared scans, and as a result this approach has received the most effort. In addition, good quality, photoconductive, CdS films have been produced via traditional methods and characterized using optical and electrical measurements. Overall film uniformity for both CdS and CdTe has been improved by the installation of a stainless steel, gravity fed, spray nozzle and mechanical linkage.

Sienkiewicz, P.; Lis, S.; Serreze, H.B.; Entine, G.

1980-03-01T23:59:59.000Z

383

Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance  

Science Conference Proceedings (OSTI)

We report on CdS/CdTe photovoltaic devices that contain a thin Ta2O5 film deposited onto the CdS window layer by sputtering. We show that for thicknesses below 5 nm, Ta2O5 films between CdS and CdTe positively affect the solar cell performance, improving JSC, VOC, and the cell power conversion efficiency despite the insulating nature of the interlayer material. Using the Ta2O5 interlayer, a VOC gain of over 100 mV was demonstrated compared to a CdTe/CdS baseline. Application of a 1nm Ta2O5 interlayer enabled the fabrication of CdTe solar cells with extremely thin (less than 30 nm) CdS window layers. The efficiency of these cells exceeded that of a base line cell with 95 nm of CdS.

Lemmon, John P.; Polikarpov, Evgueni; Bennett, Wendy D.; Kovarik, Libor

2012-05-05T23:59:59.000Z

384

Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory  

SciTech Connect

Effects of GaSb doping on phase change characteristics of Ge-Sb-Te material are investigated by in situ resistance and x-ray diffraction measurement, optical spectroscopy, and x-ray photoelectron spectroscopy. The crystallization temperature and data retention of Ge-Sb-Te material increase significantly by the addition of GaSb, which results from the high thermal stability of amorphous GaSb. In addition, GaSb-doped Ge-Sb-Te material exhibits faster crystallization speed due to the change in electronic states as a result of the formation of chemical bonds with Ga element. Incorporation of GaSb is highly effective way to enhance the comprehensive performance of Ge-Sb-Te material for phase change memory.

Lu, Yegang [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China) [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Graduate School of Chinese Academy of Sciences, Beijing 100049 (China); Zhang, Zhonghua; Song, Sannian; Cheng, Limin; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)] [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Shen, Xiang; Wang, Guoxiang; Dai, Shixun [Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China)] [Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China)

2013-06-17T23:59:59.000Z

385

Modeling Cu Migration in CdTe Solar Cells Under Device-Processing and Long-Term Stability Conditions: Preprint  

DOE Green Energy (OSTI)

An impurity migration model for systems with material interfaces is applied to Cu migration in CdTe solar cells. In the model, diffusion fluxes are calculated from the Cu chemical potential gradient. Inputs to the model include Cu diffusivities, solubilities, and segregation enthalpies in CdTe, CdS and contact materials. The model yields transient and equilibrium Cu distributions in CdTe devices during device processing and under field-deployed conditions. Preliminary results for Cu migration in CdTe photovoltaic devices using available diffusivity and solubility data from the literature show that Cu segregates in the CdS, a phenomenon that is commonly observed in devices after back-contact processing and/or stress conditions.

Teeter, G.; Asher, S.

2008-05-01T23:59:59.000Z

386

Glass-like phonon scattering from a spontaneous nanostructure in AgSbTe2  

Science Conference Proceedings (OSTI)

Materials with very low thermal conductivity are of high interest for both thermoelectric and optical phase-change applications. Synthetic nanostructuring is most promising to suppress thermal conductivity by scattering phonons, but challenges remain in producing bulk samples. We show that in crystalline AgSbTe2, a spontaneously-forming nanostructure leads to a suppression of thermal conductivity to a glass-like level. Our mappings of phonon mean-free-paths provide a novel bottom- up microscopic account of thermal conductivity, and also reveal intrinsic anisotropies associated with the nanostructure. Ground-state degeneracy in AgSbTe2 leads to the natural formation of nanoscale domains with different orderings on the cation sublattice, and correlated atomic displacements, which efficiently scatter phonons. This mechanism is general and points to a new avenue in nano- scale engineering of materials, to achieve low thermal conductivities for efficient thermoelectric converters and phase-change memory devices.

Abernathy, Douglas L [ORNL; Ehlers, Georg [ORNL; Huq, Ashfia [ORNL; Ma, Jie [ORNL; May, Andrew F [ORNL; McGuire, Michael A [ORNL; Sales, Brian C [ORNL; Delaire, Olivier A [ORNL; Hong, Tao [ORNL; Tian, Wei [ORNL

2013-01-01T23:59:59.000Z

387

Appendix B: CArBon dioxide CApture teChnology SheetS  

NLE Websites -- All DOE Office Websites (Extended Search)

sorbents sorbents B-14 Pre-Combustion sorbents u.s. DePartment of energy aDvanCeD Carbon DioxiDe CaPture r&D Program: teChnology uPDate, may 2013 aDvanCeD Carbon DioxiDe CaPture teChnology for low-rank Coal integrateD gasifiCation CombineD CyCle (igCC) systems primary project goals TDA will investigate the technical and economic advantages of using an integrated carbon dioxide (CO 2 ) sorbent and water-gas shift (WGS) catalyst system in an integrated gasifi- cation combined cycle (IGCC) power plant, fueled with low-rank coal, and designed to capture more than 90% of the CO 2 emissions. technical goals * TDA will evaluate the physical mix of the sorbent and catalyst pellets within the same

388

EE&RE, Session: CdTe - Progress and Roadmap Alignment (Presentation)  

DOE Green Energy (OSTI)

This project supports the Solar America Initiative by: (1) assistance to SAI Incubators (Primestar Solar, AvA Solar); (2) providing industry with baseline understanding of CdS/CdTe device formation and reliability--incorporation of low-cost, high quality TCOs, functionality and options for buffer layers, effect of various CdS options, effect of and importance CdSTe alloy formation, effect and options for CdCl{sub 2} treatment, effect and options for back contact, and effect of residual impurities during all stages of device formation; (3) understanding modes and mechanisms of cell-level stability; and (4) establishment of CdTe PDIL Tool for rapid material and process screening.

Gessert, T.

2008-04-01T23:59:59.000Z

389

Investigation of Cd1-xMgxTe Alloys for Tandem Solar Cell Applications (Poster)  

DOE Green Energy (OSTI)

Fabrication and characterization of Cd{sub 1-x}Mg{sub x}Te(CMT) alloys and to determine their potential for device applications. Main emphasis is on the development of the devices in 1.5 to 1.8 eV range for the top cell of two-junction tandem solar cells. The conclusions are: (1) CMT alloy films with a wide composition range were fabricated; (2) the optical band gap shows a systematic variation with composition and CMT alloy films withstood the commonly used device processing steps for CdTe; and (3) they have fabricated cells with 5% efficiency in the energy gap range of 1.5 to 1.7 eV and established the viability of CMT for device applications.

Dhere, R.; Ramanathan, K.; Scharf, J.; Moutinho, H.; To, B.; Duda, A.; Noufi, R.

2006-05-01T23:59:59.000Z

390

Thermoelectric properties of AgGaTe$_2$ and related chalcopyrite structure materials  

Science Conference Proceedings (OSTI)

We present an analysis of the potential thermoelectric performance of p-type AgGaTe$_{2}$, which has already shown a $ZT$ of 0.8 with partial optimization, and observe that the same band structure features, such as a mixture of light and heavy bands and isotropic transport, that lead to this good performance are present in certain other ternary chalcopyrite structure semiconductors. We find that optimal performance of AgGaTe$_2$ will be found for hole concentrations between 4 $\\times 10^{19}$ and 2 $\\times 10^{20}$cm$^{-3}$ at 900 K, and 2 $\\times 10^{19}$ and 10$^{20}$ cm$^{-3}$ at 700 K, and that certain other chalcopyrite semiconductors might show good thermoelectric performance at similar doping ranges and temperatures if not for higher lattice thermal conductivity.

Parker, David S [ORNL; Singh, David J [ORNL

2012-01-01T23:59:59.000Z

391

Search for microscopic black holes in pp collisions at sqrt(s) = 8 TeV  

E-Print Network (OSTI)

A search for microscopic black holes and string balls is presented, based on a data sample of pp collisions at sqrt(s) = 8 TeV recorded by the CMS experiment at the Large Hadron Collider and corresponding to an integrated luminosity of 12 inverse femtobarns. No excess of events with energetic multiparticle final states, typical of black hole production or of similar new physics processes, is observed. Given the agreement of the observations with the expected standard model background, which is dominated by QCD multijet production, 95% confidence limits are set on the production of semiclassical or quantum black holes, or of string balls, corresponding to the exclusions of masses below 4.3 to 6.2 TeV, depending on model assumptions. In addition, model-independent limits are set on new physics processes resulting in energetic multiparticle final states.

CMS Collaboration

2013-03-21T23:59:59.000Z

392

CdS/CdTe Thin-Film Solar Cell with a Zinc Stannate Buffer Layer  

DOE Green Energy (OSTI)

This paper describes an improved CdS/CdTe polycrystalline thin-film solar-cell device structure that integrates a zinc stannate (Zn2SnO4 or ZTO) buffer layer between the transparent conductive oxide (TCO) layer and the CdS window layer. Zinc stannate films have a high bandgap, high transmittance, low absorptance, and low surface roughness. In addition, these films are chemically stable and exhibit higher resistivities that are roughly matched to that of the CdS window layer in the device structure. Preliminary device results have demonstrated that by integrating a ZTO buffer layer in both SnO2-based and Cd2SnO4 (CTO)-based CdS/CdTe devices, performance and reproducibility can be significantly enhanced

Wu, X.; Sheldon, P.; Mahathongdy, Y.; Ribelin, R.; Mason, A.; Moutinho, H. R.; Coutts, T. J.

1998-10-28T23:59:59.000Z

393

Effect of Extended Defects in Planar and Pixelated CdZnTe Detectors  

Science Conference Proceedings (OSTI)

We evaluated a spectroscopy-grade 15 x 15 x 7 mm{sup 3} CdZnTe (CZT) crystal with a high {mu}{tau}-product, > 10{sup -2} cm{sup 2}/V, but impaired by microscopic extended defects, such as walls of dislocations, low-angle and sub-grain boundaries, and Te inclusions. First, we evaluated a planar detector fabricated from this crystal using a Microscale X-ray Detector Mapping (MXDM) technique. Then, we fabricated from the same crystal a pixel detector to study local non-uniformities of the electric field. The measured X-ray response maps confirmed the presence of non-uniformities in the charge transport, and they showed that the global- and local-distortions of the internal E-field correlated to the extended defects and space-charge buildup on the side surfaces.

C Camarda; K Andreini; A Bolotnikov; Y Cui; A Hossain; R Gul; K Kim; L Marchini; L Xu; et al.

2011-12-31T23:59:59.000Z

394

The High-Resolution Lightweight Telescope for the EUV (HiLiTE)  

SciTech Connect

The High-resolution Lightweight Telescope for the EUV (HiLiTE) is a Cassegrain telescope that will be made entirely of Silicon Carbide (SiC), optical substrates and metering structure alike. Using multilayer coatings, this instrument will be tuned to operate at the 465 {angstrom} Ne VII emission line, formed in solar transition region plasma at {approx}500,000 K. HiLiTE will have an aperture of 30 cm, angular resolution of {approx}0.2 arc seconds and operate at a cadence of {approx}5 seconds or less, having a mass that is about 1/4 that of one of the 20 cm aperture telescopes on the Atmospheric Imaging Assembly (AIA) instrument aboard NASA's Solar Dynamics Observatory (SDO). This new instrument technology thus serves as a path finder to a post-AIA, Explorer-class missions.

Martinez-Galarce, D S; Boerner, P; Soufli, R; De Pontieu, B; Katz, N; Title, A; Gullikson, E M; Robinson, J C; Baker, S L

2008-06-02T23:59:59.000Z

395

Crystallization Times of Ge-Te Phase Change Materials as a Function of Composition  

Science Conference Proceedings (OSTI)

The crystallization times of Ge-Te phase change materials with variable Ge concentrations (29.5-72.4 at. %) were studied. A very strong dependence of the crystallization time on the composition for as-deposited, amorphous films was confirmed, with a minimum for the stoichiometric composition GeTe. The dependence is weaker for melt-quenched, amorphous material and crystallization times are between one to almost four orders of magnitude shorter than for as-deposited materials. This is promising for applications because recrystallization from the melt-quenched phase is the relevant process for optical and solid state memory, and fast crystallization and weak dependence on compositional variations are desirable.

S Raoux; H Cheng; M Caldwell; H Wong

2011-12-31T23:59:59.000Z

396

Correlations of Capacitance-Voltage Hysteresis with Thin-Film CdTe Solar Cell Performance During Accelerated Lifetime Testing  

SciTech Connect

In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

Albin, D.; del Cueto, J.

2011-03-01T23:59:59.000Z

397

EGS4 calculations for a Cd-Zn-Te detector to measure synchrotron radiation at PEP-II  

SciTech Connect

Calculations have been performed with the EGS4 Code System for a CdZnTe semiconductor detector to be used in background studies of synchrotron radiation at PEP-II. The simulations take into account K-shell fluorescent-photon production in a CdZnTe mixture, electron-hole pair collection and electronic-noise broadening. The results are compared with measurements made with encapsulated {sup 241}Am, {sup 133}Ba and {sup 109}Cd sources.

Nelson, W.R. [Stanford Univ., CA (US). Stanford Linear Accelerator Center; Borak, T.; Malchow, R.; Toki, W. [Colorado State Univ., Fort Collins, CO (US); Kadyk, J. [Lawrence Berkeley National Lab., CA (US)

1997-08-20T23:59:59.000Z

398

EGS4 CALCULATIONS FOR A Cd-Zn-Te DETECTOR TO? y MEASURE SYNCHROTRON RADIATION AT PEP-II  

E-Print Network (OSTI)

Calculations have been performed with the EGS4 Code System for a CdZnTe semiconductor detector to be used in background studies of synchrotron radiation at PEP-II. The simulations take into account K-shell uorescent-photon production in a CdZnTe mixture, electron-hole pair collection and electronic-noise broadening. The results are compared with measurements made with encapsulated 241 Am, 133 Ba and 109 Cd sources.

W. R. Nelson; T. Borak; R. Malchow; W. Toki; J. Kadyk

1997-01-01T23:59:59.000Z

399

Process Development for High Voc CdTe Solar Cells: Phase I, Annual Technical Report, October 2005 - September 2006  

DOE Green Energy (OSTI)

The focus of this project is the open-circuit voltage of the CdTe thin-film solar cell. CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, but the efficiency of the CdTe solar cell has been stagnant for the last few years. At the manufacturing front, the CdTe technology is fast paced and moving forward with U.S.-based First Solar LLC leading the world in CdTe module production. To support the industry efforts and continue the advancement of this technology, it will be necessary to continue improvements in solar cell efficiency. A closer look at the state-of-the-art performance levels puts the three solar cell efficiency parameters of short-circuit current density (JSC), open-circuit voltage (VOC), and fill factor (FF) in the 24-26 mA/cm2, 844?850 mV, and 74%-76% ranges respectively. During the late 1090s, efforts to improve cell efficiency were primarily concerned with increasing JSC, simply by using thinner CdS window layers to enhance the blue response (<510 nm) of the CdTe cell. These efforts led to underscoring the important role 'buffers' (or high-resistivity transparent films) play in CdTe cells. The use of transparent bi-layers (low-p/high-p) as the front contact is becoming a 'standard' feature of the CdTe cell.

Ferekides, C. S.; Morel, D. L.

2007-04-01T23:59:59.000Z

400

Search for new particles decaying to diject in 7 TeV proton-proton collisions at CMS  

SciTech Connect

This thesis presents a measurement of the dijet invariant mass spectrum and search for new particles decaying to dijets at CMS in 7 TeV pp collisions using data corresponding to an integrated luminosity of 2.875 pb{sup -1}. The measured dijet mass distribution is compared to QCD prediction from PYTHIA . It is required the pseudorapidity separation of the two jets to satisfy |Dh| < 1.3 with each jet inside the region of |{eta}| < 2.5. The observed dijet mass spectrum is fitted by a smooth function to search for dijet resonances. Since there is no evidence for dijet resonances, the upper limits at 95% Confidence Level (C.L.) on the resonance cross section are set. These generic cross section limits are compared with theoretical predictions for the cross section for several models of new particles: string resonances, axigluons, colorons, excited quarks, E{sub 6} diquarks, Randall-Sundrum gravitons, W' and Z'. It is excluded at 95% C.L. string resonances in the mass range 0.50 < M(S) < 2.50 TeV, excited quarks in the mass range 0.50 < M(q*) < 1.58 TeV, axigluons and colorons in the mass ranges 0.50 < M(A) < 1.17 TeV and 1.47 < M(A) < 1.52 TeV, and E{sub 6} diquarks in the mass ranges 0.50 < M(D) < 0.58 TeV, 0.97 < M(D) < 1.08 TeV, and 1.45 < M(D) < 1.60 TeV. These exclusions extend previously published limits on all models.

Ozturk, Sertac; /Cukurova U.

2011-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Electron scattering by acceptor centers in p-Ag{sub 2}Te at low temperatures  

Science Conference Proceedings (OSTI)

Resonant electron scattering in p-Ag{sub 2}Te at acceptor concentrations N{sub a} < 4.2 x 10{sup 16} cm{sup -3} has been observed in the temperature range of 50-80 K. The contribution of the resonant scattering to the temperature dependences of the conductivity {sigma}(T) and thermopower {alpha}{sub 0}(T) has been calculated. It is shown that this contribution exceeds that of charge carrier scattering by acoustic phonons.

Aliev, F. F., E-mail: farzali@physics.ab.az; Jafarov, M. B.; Askerova, G. Z. [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan); Gojaev, E. M. [Azerbaijan Technical University (Azerbaijan)

2010-08-15T23:59:59.000Z

402

Fabrication of stable, large-area, thin-film CdTe photovoltaic modules  

DOE Green Energy (OSTI)

Solar Cells, Inc (SCI) has a program to produce 60 cm X 120 cm solar modules based on CdTe films. The method of choice for semiconductor deposition is condensation from high temperature vapor's. Early work focussed on Close Spaced Sublimation and Chemical Vapor Deposition using elemental sources, but later equipment designs no longer strictly conform to either category. Small area efficiency has been confirmed by NREL at 9.3% on a 0.22 cm{sup 2} device (825 mV Voc, 18.2 mA/cm{sup 2} Jsc, and 0.62 FF) deposited on a 100 cm{sup 2} substrate. On 8 cell, 64 cm{sup 2} submodules, the best result to date is 7.3% (5.9 V Voc, 130 mA Isc, and 0.61 FF). CdS, CdTe, and ZnTe films have been deposited onto 60 cm X 120 cm substrates - single cells produced from this material have exceeded 8% efficiency, 64 cm{sup 2} submodules have exceeded 5%. Module efficiency is limited by mechanical defects - mostly shunts - associated with processing after deposition of the semiconductor layer's. Present best result is 1.4% total area efficiency. In anticipation of more advanced designs, CdTe films have also been deposited from apparatus employing elemental sources. This project is in an early stage and has produced only rudimentary results. A pro-active Safety, Health, Environmental and Disposal program has been developed. Results to date indicate that both employees and the environment have been protected against overexposure to hazards including toxic chemicals.

Nolan, J.F.; Meyers, P.V. (Solar Cells, Inc., Toledo, OH (United States))

1992-09-01T23:59:59.000Z

403

Thermographic analyses of the growth of Cd1-xZnxTe single crystals  

SciTech Connect

Bulk Cd1-xZnxTe (0

Kopach, O.V.; Bolotnikov, A.; Shcherbak, Larysa P.; Fochuk, Petro M.; and James, Ralph B.

2010-08-01T23:59:59.000Z

404

Beam-induced backgrounds in the CLIC 3 TeV CM energy interaction region  

E-Print Network (OSTI)

Luminosity spectrum and accelerator background levels strongly influence the experimental conditions and have an important impact on detector design. The expected rates of the main beam-beam products at CLIC 3 TeV CM energy, taking into account for machine imperfections, are computed. Among the other machine-induced background the photon fans from the Incoherent Synchrotron Radiation (ISR) photons emitted in the final doublet are evaluated.

B. Dalena; J. Esberg; D. Schulte

2012-02-02T23:59:59.000Z

405

Photon + Jet production at sqrt{s}=1.96 TeV  

E-Print Network (OSTI)

Prompt photon production results by the CDF and D\\OCollaborations in the Tevatron Run II at a center of mass energy of $\\sqrt{s}$=1.96 TeV are presented. Cross sections for central isolated photons, photon+jet production and photons produced in association with a heavy flavor quark are reported. The measurements are compared to Next-to-Leading order perturbative QCD predictions.

C. Deluca

2009-05-13T23:59:59.000Z

406

Luminosity limitations at the multi-TeV linear collider energy frontier  

E-Print Network (OSTI)

To achieve the desired high luminosity in e+ e- linear colliders with centre-of-mass energies above the TeV scale, careful optimisation of the beam parameters is necessary. Constraints arising from the RF structure design, the beam-beam interaction, the damping ring and the beam delivery system have to be taken into account and compromises between different requirements have to be found. The nature of these different constraints is discussed and the resulting limits for the luminosity are detailed.

Schulte, Daniel

2002-01-01T23:59:59.000Z

407

TeV Observations of Markarian 501 with the Milagrito Water Cherenkov Detector  

E-Print Network (OSTI)

The Milagrito water Cherenkov detector near Los Alamos, New Mexico, operated as a sky monitor at energies of a few TeV between February 1997 and May 1998 including the period of the strong, long-lasting 1997 flare of Markarian 501. Milagrito served as a test run for the full Milagro detector. An event excess with a significance of 3.7 sigma from Markarian 501 was observed, in agreement with expectations.

R. Atkins

1999-09-04T23:59:59.000Z

408

Development of high-efficiency, thin-film CdTe solar cells. Final subcontract report, 1 February 1992--30 November 1995  

DOE Green Energy (OSTI)

This report describes work performed by the Georgia Institute of Technology (GIT) to bring the polycrystalline CdTe cell efficiency a step closer to the practically achievable efficiency of 18% through fundamental understanding of detects and loss mechanisms, the role of chemical and heat treatments, and investigation of now process techniques. The objective was addressed by a combination of in-depth characterization, modeling, materials growth, device fabrication, and `transport analyses of Au/Cu/CdTe/CdS/SnO {sub 2} glass front-wall heterojunction solar cells. GiT attempted to understand the loss mechanism(s) in each layer and interface by a step-by-step investigation of this multilayer cell structure. The first step was to understand, quantify, and reduce the reflectance and photocurrent loss in polycrystalline CdTe solar calls. The second step involved the investigation of detects and loss mechanisms associated with the CdTe layer and the CdTe/CdS interface. The third stop was to investigate the effect of chemical and heat treatments on CdTe films and cells. The fourth step was to achieve a better and reliable contact to CdTe solar cells by improving the fundamental understanding. Of the effects of Cu on cell efficiency. Finally, the research involved the investigation of the effect of crystallinity and grain boundaries on Cu incorporation in the CdTe films, including the fabrication of CdTe solar calls with larger CdTe grain size.

Rohatgi, A.; Chou, H.C.; Kamra, S.; Bhat, A. [Georgia Inst. of Tech., Atlanta, GA (United States)

1996-01-01T23:59:59.000Z

409

Fluorescent CdSe/ZnS nanocrystal-peptide conjugates for long-term, nontoxic imaging and  

E-Print Network (OSTI)

Fluorescent CdSe/ZnS Nanocrystal-Peptide Conjugates forfluorescent labels, silanized CdSe/ZnS nanocrystal-peptidenuclei of living cells. CdSe/ZnS nanocrystals, or so called

Chen, Fanqing; Gerion, Daniele

2005-01-01T23:59:59.000Z

410

Strain-Dependent Photoluminescence Behavior of CdSe/CdS Nanocrystals with Spherical, Linear, and Branched Topologies  

E-Print Network (OSTI)

emission peak maxima for CdSe/CdS rods of different lengthsfluorescence spectra of bare zb-CdSe dots in a diamond anvilPhotoluminescence Behavior of CdSe/CdS Nanocrystals with

Choi, Charina L.

2010-01-01T23:59:59.000Z

411

Conductivity anisotropy in the doped Bi{sub 2}Te{sub 3} single crystals  

Science Conference Proceedings (OSTI)

Temperature dependences (temperature range T = 0.5-300 K) of resistivity in the plane of layers and in the direction perpendicular to the layers, and the galvanomagnetic effects in undoped and doped Bi{sub 2}Te{sub 3} single crystals are studied (magnetic field H < 80 kOe, T = 0.5-4.2 K). It is shown that upon doping of Bi{sub 2}Te{sub 3} with the Group III atoms (In and B), conductivity anisotropy increases mainly due to an increase in resistivity in the direction perpendicular to the layers. This fact makes it possible to assume that the atoms of these impurities are incorporated mainly into the van der Waal gaps between the layers upon doping. It is also revealed that, upon doping of Bi{sub 2}Te{sub 3} with In and B, the temperature dependence of conductivity becomes weaker, which indicates an increase in the role of scattering by defects in scattering mechanisms. The concentrations and mobilities of charge carriers, values of the Hall factor conditioned by the anisotropy of effective masses and orientation of ellipsoids with respect to crystallographic axes, areas of the extreme section of the Fermi surface by the plane perpendicular to the direction of the magnetic field, and the Fermi energy are evaluated.

Abdullaev, N. A., E-mail: anadir@azintex.com; Kakhramanov, S. Sh.; Kerimova, T. G.; Mustafayeva, K. M. [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan); Nemov, S. A. [St. Petersburg State Polytechnical University (Russian Federation)

2009-02-15T23:59:59.000Z

412

Study of Four Young TeV Pulsar Wind Nebulae with a Spectral Evolution Model  

E-Print Network (OSTI)

We study four young Pulsar Wind Nebulae (PWNe) detected in TeV gamma-rays, G21.5-0.9, G54.1+0.3, Kes 75, and G0.9+0.1, using the spectral evolution model developed and applied to the Crab Nebula in our previous work. We model the evolution of magnetic field and particle distribution function inside a uniformly expanding PWN considering a time-dependent injection from the pulsar and radiative and adiabatic losses. Considering uncertainties in the interstellar radiation field (ISRF) and their distance, we study two cases for each PWN. Because TeV PWNe have a large TeV gamma-rays to X-rays flux ratio, the magnetic energy of the PWNe accounts for only a small fraction of the total energy injected (typically a few x 10^{-3}). The gamma-ray emission is dominated by inverse Compton scattering off the infrared photons of the ISRF. A broken power-law distribution function for the injected particles reproduces the observed spectrum well, except for G0.9+0.1. For G0.9+0.1, we do not need a low energy counterpart because...

Tanaka, Shuta J

2011-01-01T23:59:59.000Z

413

Time dependent modelisation of TeV blazars by a stratified jet model  

E-Print Network (OSTI)

We present a new time-dependent inhomogeneous jet model of non-thermal blazar emission. Ultra-relativistic leptons are injected at the base of a jet and propagate along it. We assume continuous reacceleration and cooling, producing a relativistic quasi-maxwellian (or "pile-up") particle energy distribution. The synchrotron and Synchrotron-Self Compton jet emissivity are computed at each altitude. Klein-Nishina effects as well as intrinsic gamma-gamma absorption are included in the computation. Due to the pair production optical depth, considerable particle density enhancement can occur, particularly during flaring states.Time-dependent jet emission can be computed by varying the particle injection, but due to the sensitivity of pair production process, only small variations of the injected density are required during the flares. The stratification of the jet emission, together with a pile-up distribution, allows significantly lower bulk Lorentz factors, compared to one-zone models. Applying this model to the case of PKS 2155-304 and its big TeV flare observed in 2006, we can reproduce simultaneously the average broad band spectrum of this source from radio to TeV, as well as TeV light curve of the flare with bulk Lorentz factor lower than 15.

Timothé Boutelier; Gilles Henri; Pierre-Olivier Petrucci

2008-10-01T23:59:59.000Z

414

An inhomogeneous jet model for the rapid variability of TeV blazars  

E-Print Network (OSTI)

We present a new time-dependent inhomogeneous jet model of non-thermal blazar emission, which reproduces the entire spectral energy distribution together with the rapid gamma-ray variability. Ultra-relativistic leptons are injected at the base of a jet and propagate along the jet structure. We assume continuous reacceleration and cooling, producing a relativistic quasi-maxwellian (or "pile-up") particle energy distribution. The synchrotron and Synchrotron-Self Compton jet emissivity are computed at each altitude. Klein-Nishina effects as well as intrinsic gamma-gamma absorption are included in the computation. Due to the pair production optical depth, considerable particle density enhancement can occur, particularly during flaring states. Time-dependent jet emission can be computed by varying the particle injection, but due to the sensitivity of pair production process, only small variations of the injected density are required during the flares. The stratification of the jet emission, together with a pile-up distribution, allows significantly lower bulk Lorentz factors, compared to one-zone models. Applying this model to the case of PKS2155-304 and its big TeV flare observed in 2006, we can reproduce simultaneously the average broad band spectrum of this source as well as the TeV spectra and TeV light curve of the flare with bulk Lorentz factor lower than 15.

Timothé Boutelier; Gilles Henri; Pierre-Olivier Petrucci

2008-07-31T23:59:59.000Z

415

Investigation of Cd1-XMgxTe Alloys for Tandem Solar Cell Applications: Preprint  

DOE Green Energy (OSTI)

Theoretical modeling of two-junction tandem solar cells shows that for optimal device performance, the bandgap of the top cell should be in the range of 1.6 to 1.8 eV. Cd1-xMgxTe (CMT) alloys have a lattice constant close to that of CdTe, and the addition of a small amount of Mg changes the bandgap considerably. In this paper, we present our work on developing CMT for solar cell applications. CMT films were prepared by vacuum deposition with co-evaporation of CdTe and Mg on substrates heated to 300-400 C. Films with a composition in the range of x = 0 to 0.66 were fabricated, and optical analysis of the films showed that the bandgap of the samples ranged from 1.5 to 2.3 eV and varied linearly with composition. For the fabrication of devices using these alloy films, we also investigated the effect of post-deposition CdCl2 heat treatment. We have investigated junctions between CdS and CMT alloys in the bandgap range of 1.5 to 1.8 eV for tandem cell applications. We have also worked on the ohmic contacts to the CMT alloy films using Cu/Au bilayers, and the preliminary data shows a significant effect of the contact processing on the device performance.

Dhere, R.; Ramanathan, K.; Scharf, J.; Moutinho, H.; To, B.; Duda, A.; Noufi, R.

2006-05-01T23:59:59.000Z

416

Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications; Preprint  

DOE Green Energy (OSTI)

We report here on the major commercialization aspects of thin-film photovoltaic (PV) technologies based on CIGS and CdTe (a-Si and thin-Si are also reported for completeness on the status of thin-film PV). Worldwide silicon (Si) based PV technologies continues to dominate at more than 94% of the market share, with the share of thin-film PV at less than 6%. However, the market share for thin-film PV in the United States continues to grow rapidly over the past several years and in CY 2006, they had a substantial contribution of about 44%, compared to less than 10% in CY 2003. In CY 2007, thin-film PV market share is expected to surpass that of Si technology in the United States. Worldwide estimated projections for CY 2010 are that thin-film PV production capacity will be more than 3700 MW. A 40-MW thin-film CdTe solar field is currently being installed in Saxony, Germany, and will be completed in early CY 2009. The total project cost is Euro 130 million, which equates to an installed PV system price of Euro 3.25/-watt averaged over the entire solar project. This is the lowest price for any installed PV system in the world today. Critical research, development, and technology issues for thin-film CIGS and CdTe are also elucidated in this paper.

Ullal, H. S.; von Roedern, B.

2007-09-01T23:59:59.000Z

417

Overcoming Degradation Mechanisms in CdTe Solar Cells: Final Report, July 1998--September 2001  

DOE Green Energy (OSTI)

This report describes the stability of CdTe solar cells, with special focus on possible effects of diffusion from the contact to the absorber towards other cell components. Both whole cells and test systems containing only the ohmic contact and the absorber or only the window were used. We found that NiTe2 is a promising back-contact material. We also found that Cu as such is not the dominant factor in the most common and quickest type of degradation of these cells. An additional factor appears to be the formation of an oxide film on CdTe grains, which can be associated with the formation of the additional back-contact barrier that has been deduced from electrical characterization. Further observations were: Cell degradation appears to be promoted by H2O, O2, and illumination, in that order; less efficient cells are less stable than more efficient ones; some cells have been stabilized by heating in ultra-dry and O2-free inert atmosphere (N2 was used by us) before use, against subsequent degradation; and cells can recover by heating in dry N2 or by sitting on the shelf in ambient atmosphere.

Cahen, D.; Hodes, G.; Gartsman, K.

2002-03-01T23:59:59.000Z

418

Effect of Te Inclusions on the Performance of Cdznte Radiation Detectors  

Science Conference Proceedings (OSTI)

Te inclusions existing at high concentrations in CdZnTe (CZT) material can degrade the performance of CZT detectors. These microscopic defects trap the free electrons generated by incident radiation, so entailing significant fluctuations in the total collected charge and thereby strongly affecting the energy resolution of thick (long-drift) detectors. Such effects were demonstrated in thin planar detectors, and, in many cases, they proved to be the dominant cause of the low performance of thick detectors, wherein the fluctuations in the charge losses accumulate along the charge's drift path. We continued studying this effect using different tools and techniques. We employed a dedicated beamline recently established at BNL's National Synchrotron Light Source for characterizing semiconductor radiation detectors, along with an IR transmission microscope system, the combination of which allowed us to correlate the concentration of defects with the devices' performances. We present here our new results from testing over 50 CZT samples grown by different techniques. Our goals are to establish tolerable limits on the size and concentrations of these detrimental Te inclusions in CZT material, and to provide feedback to crystal growers to reduce their numbers in the material.

Bolotnikov, A.; Abdul-Jabbar, N; Babalola, O; Camarda, G; Cui, Y; Hossain, A; Jackson, E; Jackson, H; James, J; et. al.

2009-01-01T23:59:59.000Z

419

Photovoltaic effect in InSe Application to Solar Energy Conversion  

E-Print Network (OSTI)

253 Photovoltaic effect in InSe Application to Solar Energy Conversion A. Segura, J. P. Guesdon, J are reported. Photovoltaic spectra are fitted with measured values oftransport and optical parameters. InSe is shown to be a new material with attractive characteristics for solar energy conversion. Performance

Paris-Sud XI, Université de

420

Photovoltaic cells fabricated by electrophoretic deposition of CdSe nanocrystals  

E-Print Network (OSTI)

Photovoltaic cells fabricated by electrophoretic deposition of CdSe nanocrystals Nathanael J. Smith Electrophoretic deposition was used to deposit CdSe nanocrystals on TiO2 for use in photovoltaic cells formed. A solar cell constructed using electrophoretic deposition exhibited a photovoltaic response from

Smith, Nathanael J.

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Development of a Low Cost Insulated Foil Substrate for Cu(InGaSe)2 Photovoltaics  

DOE Green Energy (OSTI)

The project validated the use of stainless steel flexible substrate coated with silicone-based resin dielectric, developed by Dow Corning Corporation, for Cu(InGa)Se2 based photovoltaics. The projects driving force was the high performance of Cu(InGa)Se2 based photovoltaics coupled with potential cost reduction that could be achieved with dielectric coated SS web substrate.

ERTEN ESER

2012-01-22T23:59:59.000Z

422

Influence of Surfactants and Charges on CdSe Quantum Dots  

Science Conference Proceedings (OSTI)

The chemistry between CdSe quantum dots and common surface capping ligands is invested using density functional theory. We will discuss the electronic structures and optical properties of CdSe QDs controlled by the size of particle, self-organization, capping ligands, and positive charges. Charges on quantum dots have profound effects on their structures, binding energies, and optical properties.

Yang, Ping; Tretiak, Sergei; Ivanov, Sergei

2011-07-11T23:59:59.000Z

423

Nanoimprinted photonic crystals for the modification of the (CdSe)ZnS nanocrystals light emission  

Science Conference Proceedings (OSTI)

We report experimental results of photoluminescence (PL) enhancement in 2D photonic crystals nanoimprinted in functionalized poly-methyl methacrylate (PMMA) based polymer in which (CdSe)ZnS core-shell luminescent nanocrystals (NCs) have been incorporated. ... Keywords: (CdSe)ZnS nanocrystals, Light extraction, Nanoimprint lithography, Photoluminescence, Photonic crystal

V. Reboud; N. Kehagias; M. Zelsmann; M. Striccoli; M. Tamborra; M. L. Curri; A. Agostiano; D. Mecerreyes; J. A. Alduncín; C. M. Sotomayor Torres

2007-05-01T23:59:59.000Z

424

Cu-Ga-Se Thin Films Prepared by a Combination of Electrodeposition and Evaporation Techniques  

Science Conference Proceedings (OSTI)

Cu-Ga-Se thin films were prepared using a combination of electrodeposition and evaporation techniques. A Cu-Se/Mo/glass precursor thin film was first prepared by galvanostatic electrodeposition. On top of this film three different thicknesses of Ga were deposited by evaporation. The Cu-Ga-Se thin films were formed by annealing the Ga/Cu-Se/Mo/glass thin film configuration in a tubular chamber with Se powder, at different temperatures. Thin films were characterized by X-ray diffraction (XRD), photocurrent spectroscopy (PS), inductively coupled plasma (ICP) analysis, and scanning electron microscopy (SEM). The detailed analysis from X-ray reveals that after annealing at 550 C the CuGaSe{sub 2} phase is formed when the thickness of Ga is 0.25 {mu}m, however at 0.5 {mu}m and 1.0 {mu}m Ga the formation of CuGa{sub 3}Se{sub 5} and CuGa{sub 5}Se{sub 8} phases is observed respectively. Band gap values were obtained using photocurrent spectroscopy.

Fernandez, A. M.; Turner, J. A.

2012-04-01T23:59:59.000Z

425

AeroSys: Order (2010-CE-01/0201 and 2010-SE-0302) | Department of Energy  

NLE Websites -- All DOE Office Websites (Extended Search)

AeroSys: Order (2010-CE-01/0201 and 2010-SE-0302) AeroSys: Order (2010-CE-01/0201 and 2010-SE-0302) AeroSys: Order (2010-CE-01/0201 and 2010-SE-0302) July 1, 2010 DOE ordered AeroSys, Inc. to pay a $25,000 civil penalty after finding AeroSys had manufactured and distributed in commerce in the U.S. various models of air conditioners and air conditioning heat pumps that did not comport with the applicable energy conservation standards. In addition, AeroSys had distributed air conditioners and air conditioning heat pumps without submitting the required certification reports. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and AeroSys. AeroSys: Order (2010-CE-01/0201 and 2010-SE-0302) More Documents & Publications AeroSys: Noncompliance Determination (2010-CE-01/0201 and 2010-SE-0302)

426

Air-Con International: Order (2010-SE-0301) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Air-Con International: Order (2010-SE-0301) Air-Con International: Order (2010-SE-0301) Air-Con International: Order (2010-SE-0301) November 17, 2010 DOE ordered Air-Con International, Inc. to pay a civil penalty of $10,000 after finding Air-Con had distributed in commerce in the U.S. central air conditioning units that were not in conformity with the applicable energy conservation standards. DOE also found that, while some units were exported, none of the units were properly marked as imports intended for exportation. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Air-Con. Air-Con International: Order (2010-SE-0301) More Documents & Publications Air-Con International: Order (2010-SE-0301) Air-Con International: Noncompliance Determination and Proposed Penalty

427

SE HAN FINALIZADO LOS PREPARATIVOS PARA LA CONFERENCIA NACIONAL DE JUSTICIA  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

SE HAN FINALIZADO LOS PREPARATIVOS PARA LA CONFERENCIA NACIONAL DE SE HAN FINALIZADO LOS PREPARATIVOS PARA LA CONFERENCIA NACIONAL DE JUSTICIA MEDIOAMBIENTAL Y PROGRAMA DE FORMACIÓN 2013 SE HAN FINALIZADO LOS PREPARATIVOS PARA LA CONFERENCIA NACIONAL DE JUSTICIA MEDIOAMBIENTAL Y PROGRAMA DE FORMACIÓN 2013 La National Environmental Justice Conference, Inc. (Conferencia de Justicia Medioambiental) se prepara para otro exitoso acontecimiento, ya que se aproxima la Conferencia Nacional de Justicia Medioambiental y Programa de Formación del 2013. 2013_NEJC_Release_Spanish.pdf More Documents & Publications PREPARATIVOS EN MARCHA PARA LA CONFERENCIA SOBRE JUSTICIA AMBIENTAL NACIONAL Y EL PROGRAMA DE CAPACITACIÓN 2014 2013 National Environmental Justice Conference and Training Program EIS-0281: Draft Environmental Impact Statement Summary (Spanish)

428

Ingersoll-Rand: Proposed Penalty (2012-SE-1608) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Ingersoll-Rand: Proposed Penalty (2012-SE-1608) Ingersoll-Rand: Proposed Penalty (2012-SE-1608) Ingersoll-Rand: Proposed Penalty (2012-SE-1608) February 27, 2013 DOE alleged in a Notice of Proposed Civil Penalty that Ingersoll-Rand manufactured and distributed a noncompliant basic model 2TTA0060A4000C central air conditioner in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Ingersoll-Rand: Proposed Penalty (2012-SE-1608) More Documents & Publications Ingersoll-Rand: Order (2012-SE-1608) WA_01_034_INGERSOLL-RAND_ENERGY_SYSTEMS_Waiver_of_Domestic_a.pdf

429

Surface Plasmon Excitation via Au Nanoparticles in CdSe Semiconductor  

SciTech Connect

We present experimental evidence for the large Raman and photoluminescence enhancement in CdSe semiconductor films grown on Si and glass substrates due to excitation of surface plasmon resonances in proximate gold metal nanoparticles deposited on the surface of CdSe film. Heterojunction diodes containing n-CdSe on p-Si semiconductor were fabricated and the surface of the diodes was in situ coated with Au nanoparticles using the ultra-high vacuum pulsed-laser deposition technique. A significant enhancement of the photocurrent was obtained in CdSe/p-Si containing Au nanoparticles on the surface compared to CdSe/p-Si due to the enhanced photo-absorption within the semiconductor by the phenomenon of surface plasmon resonance. These observations suggest a variety of approaches for improving the performance of devices such as photodetectors, photovoltaic, and related devices, including biosensors.

Pradhan, A. K. [Department of Engineering Norfolk State University, 700 Park Avenue, Norfolk, VA 23504 (United States); Department of Physics, Fisk University, 1000, 17 Avenue North, Nashville, TN 37208 (United States); Konda, R. B.; Mundle, R.; Mustafa, H.; Bamiduro, O. [Department of Engineering Norfolk State University, 700 Park Avenue, Norfolk, VA 23504 (United States); Roy, U. N.; Cui, Y. [Department of Physics, Fisk University, 1000, 17 Avenue North, Nashville, TN 37208 (United States); Burger, A. [Department of Physics, Fisk University, 1000, 17 Avenue North, Nashville, TN 37208 (United States); Department of Engineering Norfolk State University, 700 Park Avenue, Norfolk, VA 23504 (United States)

2008-10-23T23:59:59.000Z

430

Magnetic and electrical properties of layered magnets Tl(Cr,Mn,Co)Se{sub 2}  

Science Conference Proceedings (OSTI)

Tl(Cr,Mn,Co)Se{sub 2} crystals were synthesized at T {approx} 1050 K. X-ray diffraction analysis showed that TlCrSe{sub 2}, TlMnSe{sub 2}, and TlCoSe{sub 2} compounds crystallize in the hexagonal crystal system with the lattice parameters: a = 3.6999 A, c = 22.6901 A, c/a {approx} 6.133, z = 3, {rho}{sub x} = 6.209 g/cm{sup 3}; a = 6.53 A, c = 23.96 A, c/a {approx} 3.669, z = 8, {rho}{sub x} = 6.71 g/cm{sup 3}; and a = 3.747 A, c = 22.772 A, c/a {approx} 6.077, z = 3, {rho}{sub x} = 7.577 g/cm{sup 3}, respectively. Magnetic and electrical studies in the temperature range from 80-400 K showed that TlCrSe{sub 2} is a semiconductor ferromagnet, TlMnSe{sub 2} is a semiconductor antiferromagnet, and TlCoSe{sub 2} is a ferrimagnet with a conductivity characteristic of metals. A rather large deviation in the experimental effective magnetic moment for TlCrSe{sub 2} (3.05 {mu}B) from the theoretical value (3.85 {mu}B) is attributed to two-dimensional magnetic ordering in the paramagnetic region of the noticeably layered ferromagnet TlCrSe{sub 2}. In TlCrSe{sub 2}, a correlation between magnetic and electrical properties was detected.

Veliyev, R. G.; Sadikhov, R. Z.; Kerimova, E. M., E-mail: ekerimova@physics.ab.az; Asadov, Yu. G.; Jabbarov, A. I. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

2009-02-15T23:59:59.000Z

431

Expanding the One-Dimensional CdS-CdSe Composition Landscape: Axially Anisotropic CdS{sub 1-x}Se{sub x} Nanorods  

Science Conference Proceedings (OSTI)

We report the synthesis and characterization of CdS{sub 1–x}Se{sub x} nanorods with axial anisotropy. These nanorods were synthesized via single injection of a mixture of trioctylphosphine sulfur and selenium precursors to a cadmium–phosphonate complex at high temperature. Transmission electron microscopy shows nanoparticle morphology changes with relative sulfur and selenium loading. When the synthetic selenium loading is between 5% and 10% of total chalcogenides, the nanorods exhibit pronounced axial anisotropy characterized by a thick “head” and a thin “tail”. The nanorods’ band gap red shifts with increasing selenium loading. X-ray diffraction reveals that CdS{sub 1–x}Se{sub x} nanorods have a wurtzite crystal structure with a certain degree of alloying. High-resolution and energy-filtered transmission electron microscopy and energy-dispersive X-ray spectroscopy confirm the head of the anisotropic nanorods is rich in selenium, whereas the tail is rich in sulfur. Time evolution and mechanistic studies confirm the nanorods form by quick growth of the CdSe-rich head, followed by slow growth of the CdS-rich tail. Metal photodeposition reactions with 575 nm irradiation, which is mostly absorbed by the CdSe-rich segment, show effective electronic communication between the nanorod head and tail segments.

Ruberu, T. Purnima A.; Vela, Javier

2011-06-02T23:59:59.000Z

432

Development of high-efficiency, thin-film CdTe solar cells. Annual subcontract report, January 1, 1993--December 31, 1993  

DOE Green Energy (OSTI)

Polycrystalline thin film CdTe solar cells are one of the leading candidates for terrestrial photovoltaic applications. Theoretical calculations project an efficiency of 27% for single crystal, single junction CdTe cells, and the practically achievable efficiency for polycrystalline CdTe cells is 18-20%. Polycrystalline CdTe cells made by different groups show a significant variation in short circuit currents, open circuit voltages, and cell efficiencies. A better understanding of carrier loss and transport mechanism is crucial for explaining these differences, improving the yield, and bridging the gap between current and practically achievable limits in CdTe cell efficiencies. The goal of this program is to improve the understanding of the loss mechanisms in thin film CdS/CdTe solar cells and to improve their efficiency by characterizing the properties of the films as well as the finished devices.

Rohatgi, A.; Chou, H.C.; Kamra, S.; Bhat, A. [Georgia Institute of Technology, Atlanta, GA (United States)

1994-09-01T23:59:59.000Z

433

Probing the size and environment induced phase transformation in CdSe quantum dots  

SciTech Connect

The structural and electronic properties of CdSe quantum dots in toluene and drop-casted on Si wafer were investigated by in-situ micro X-ray diffraction, X-ray photoelectron spectroscopy and UV-Vis absorption and emission spectroscopy. The in-situ micro diffraction data show that the CdSe quantum dots capped with TOPO or hexadecylamine (HDA) in toluene exhibit predominantly wurtzite crystal structure, which undergoes a phase transformation to zinc blende crystal structure following drop casting on Si and this phase transition increases with decreasing the size of the CdSe quantum dots. Decreasing the size of quantum dots also increases the Se vacancies that facilitate the phase transformation. The X-ray photoelectron spectra show a systematic increase in the core level binding energies of Cd 3d and Se 3d, the band gap and the Cd/Se ratio as the size of the quantum dots decreases from 6.6nm to 2.1nm. This is attributed to the quantum confinement of CdSe crystallites by the capping ligands in toluene which increases with decreasing the size of the quantum dots. However, drop-casting quantum dots on Si alter the density and arrangement of capping ligands and solvent molecules on the quantum dots which causes significant phase transformation.

Karakoti, Ajay S.; Sanghavi, Shail P.; Nachimuthu, Ponnusamy; Yang, Ping; Thevuthasan, Suntharampillai

2011-11-17T23:59:59.000Z

434

Structure Evolution of CdSe Nanocrystals During Ripening Process Studied by XAFS  

Science Conference Proceedings (OSTI)

The structure evolution of CdSe nanocrystal with different grown sizes (1.9, 2.7 and 3.1 nm, respectively) obtained by size-selective method from colloidal solution is investigated by XAFS. By such purposeful design of samples, we have investigated the isolated ripening process effect on the structure of nanocrystals. The Se K-edge XAFS results of CdSe nanocrystals show that structure disorder of nanocrystal increases from 0.0046 Aa2 to 0.0053 (0.0072) Aa2 while its size grows from 1.9nm to 2.7 (3.1) nm during the ripening growth process. We propose that during ripening process the growth of CdSe nanocyrstal is through the deposition of Cd and Se ions on the surface of CdSe nucleate, and as a consequence, the defects on the nucleate surface lead to larger structural disorder of the resulting CdSe nanocrystal.

Zhang Xinfeng; Wei Feng; Yan Wensheng; Wei Shiqiang [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China)

2007-02-02T23:59:59.000Z

435

Development of CdS/CdTe Tin Film Devices for St. Gobain Coated Glass: Cooperative Research and Development Final Report, CRADA Number CRD-08-317  

DOE Green Energy (OSTI)

Research performed at NREL to produce CdS/CdTe devices on St. Gobain coated-glass material to establish a baseline CdS/CdTe device process and determine baseline device performance parameters on St. Gobain material. Performance of these baseline devices compared to similar devices produced by applying the established baseline CdS/CdTe process on alternative St. Gobain coated-glass materials.

Gessert, T.

2012-04-01T23:59:59.000Z

436

Excitation density distribution in electron-beam-pumped ZnSe semiconductor lasers  

Science Conference Proceedings (OSTI)

The spatial density distribution of the absorbed energy in ZnSe semiconductor lasers excited by electrons with energies from 2 keV to 1 MeV is calculated by the Monte-Carlo method. Approximate analytic expressions determining the absorbed energy of electrons in ZnSe are presented. The pump power threshold in a semiconductor quantum-well ZnSe structure is experimentally determined. The lasing threshold in such structures is estimated as a function of the electron energy. (active media)

Donskoi, E N; Zalyalov, A N; Petrushin, O N; Savel'ev, Yu A; Tarasov, M D; Shigaev, Yu S [Russian Federal Nuclear Center 'All-Russian Scientific Research Institute of Experimental Physics', Sarov, Nizhnii Novgorod Region (Russian Federation); Zhdanova, E V; Zverev, M M; Peregudov, D V [Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation); Ivanov, S V; Sedova, I V; Sorokin, S V [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

2008-12-31T23:59:59.000Z

437

An oleic acid-capped CdSe quantum-dot sensitized solar cell  

SciTech Connect

In this letter, we report an oleic acid (OA)-capped CdSe quantum-dot sensitized solar cell (QDSSC) with an improved performance. The TiO{sub 2}/OA-CdSe photoanode in a two-electrode device exhibited a photon-to-current conversion efficiency of 17.5% at 400 nm. At AM1.5G irradiation with 100 mW/cm{sup 2} light intensity, the QDSSCs based on OA-capped CdSe showed a power conversion efficiency of about 1%. The function of OA was to increase QD loading, extend the absorption range and possibly suppress the surface recombination.

Chen Jing [School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Song, J. L.; Deng, W. Q. [Division of Chemistry and Biological Chemistry, School of Physical and Mathematical Science, Nanyang Technological University, Singapore 637616 (Singapore); Sun, X. W. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Jiang, C. Y. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Lei, W. [School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Huang, J. H.; Liu, R. S. [Department of Chemistry, National Taiwan University, Taipei 106, Taiwan (China)

2009-04-13T23:59:59.000Z

438

Advanced processing technology for high-efficiency, thin-film CuInSe{sub 2} and CdTe solar cells. Annual subcontract report, 1 March 1993--28 February 1994  

Science Conference Proceedings (OSTI)

This annual report details activities in research on advanced processing technology for high-effiency, thin-film solar cells.

Morel, D.L.; Ferekides, C.S. [University of South Florida, Tampa, FL (United States)

1994-07-01T23:59:59.000Z

439

Room-temperature MBE deposition, thermoelectric properties, and advanced structural characterization of binary Bi[subscript 2]Te[subscript 3] and Sb[subscript 2]Te[subscript 3] thin films  

Science Conference Proceedings (OSTI)

Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3} thin films were grown at room temperature on SiO{sub 2} and BaF{sub 2} substrates using molecular beam epitaxy. A layer-by-layer growth was achieved such that metallic layers of the elements with 0.2 nm thickness were deposited. The layer structure in the as-deposited films was confirmed by X-ray diffraction and was seen more clearly in Sb{sub 2}Te{sub 3} thin films. Subsequent annealing was done at 250 C for 2 h and produced the Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3} crystal structure as confirmed by high-energy X-ray diffraction. This preparation process is referred to as nano-alloying and it was demonstrated to yield single-phase thin films of these compounds. In the thin films a significant texture could be identified with the crystal c axis being almost parallel to the growth direction for Sb{sub 2}Te{sub 3} and tilted by about 30{sup o} for Bi{sub 2}Te{sub 3} thin films. In-plane transport properties were measured for the annealed films at room temperature. Both films yielded a charge carrier density of about 2.6 x 10{sup 19} cm{sup -3}. The Sb{sub 2}Te{sub 3} films were p-type, had a thermopower of +130 {micro}V K{sup -1}, and surprisingly high mobilities of 402 cm{sup 2} V{sup -1} s{sup -1}. The Bi{sub 2}Te{sub 3} films were n-type, showed a thermopower of -153 {micro}V K{sup -1}, and yielded significantly smaller mobilities of 80 cm2 V{sup -1} s{sup -1}. The chemical composition and microstructure of the films were investigated by transmission electron microscopy (TEM) on cross sections of the thin films. The grain sizes were about 500 nm for the Sb{sub 2}Te{sub 3} and 250 nm for the Bi{sub 2}Te{sub 3} films. In the Bi{sub 2}Te{sub 3} thin film, energy-filtered TEM allowed to image a Bi-rich grain boundary phase, several nanometers thick. This secondary phase explains the poor mobilities of the Bi{sub 2}Te{sub 3} thin film. With these results the high potential of the nano-alloying deposition technique for growing films with a more complex layer architecture is demonstrated.

Peranio, N.; Winkler, M.; Bessas, D.; Aabdin, Z.; König, J.; Böttner, H.; Hermann, R.P.; Eibl, O. (Julich); (Tubingen); (Fraunhofer)

2012-10-23T23:59:59.000Z

440

Manufacturing Process Optimization to Improve Stability, Yield and Efficiency of CdS/CdTe PV Devices: Final Report, December 2004 - January 2009  

DOE Green Energy (OSTI)

The research by Colorado State University advances the understanding of device stability, efficiency, and process yield for CdTe PV devices.

Sampath, W. S.; Enzenroth, A.; Barth, K.

2009-03-01T23:59:59.000Z

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441

American Ref-Fuel of SE CT Biomass Facility | Open Energy Information  

Open Energy Info (EERE)

American Ref-Fuel of SE CT Biomass Facility American Ref-Fuel of SE CT Biomass Facility Jump to: navigation, search Name American Ref-Fuel of SE CT Biomass Facility Facility American Ref-Fuel of SE CT Sector Biomass Facility Type Municipal Solid Waste Location New London County, Connecticut Coordinates 41.5185189°, -72.0468164° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.5185189,"lon":-72.0468164,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

442

Arçelik A.Åž: Compliance Determination (2010-SE-0105) | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Arçelik A.Ş: Compliance Determination (2010-SE-0105) Arçelik A.Ş: Compliance Determination (2010-SE-0105) Arçelik A.Ş: Compliance Determination (2010-SE-0105) August 30, 2010 DOE issued a Notice of Compliance Determination after test results revealed that Arçelik's Blomberg BRFB1450 refrigerator-freezer complies with the applicable energy conservation standards. DOE reviewed test results from Arçelik and also performed DOE testing on four units of the product. The DOE had issued a subpoena for information and production of documents requesting test data from Arçelik A.Ş, after DOE received information indicating that Arçelik's Blomberg BRFB1450 model refrigerator-freezer exceeds the applicable Federal energy conservation standards. Arçelik A.Ş: Compliance Determination (2010-SE-0105) More Documents & Publications

443

AeroSys: Noncompliance Determination (2010-SE-0302) | Department of Energy  

NLE Websites -- All DOE Office Websites (Extended Search)

Noncompliance Determination (2010-SE-0302) Noncompliance Determination (2010-SE-0302) AeroSys: Noncompliance Determination (2010-SE-0302) April 13, 2010 DOE issued a Notice of Noncompliance Determination to AeroSys, Inc. finding that basic model THDC-24SG does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. AeroSys must immediately notify each person (or company) to whom AeroSys distributed the noncompliant product that the product does not meet Federal standards. In addition, AeroSys must provide to DOE documents and records showing the number of units AeroSys distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties. AeroSys: Noncompliance Determination (2010-SE-0302)

444

Memorandum of Understanding (MOU) between DOE, Northern Pass and SE Group -  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Memorandum of Understanding (MOU) between DOE, Northern Pass and SE Memorandum of Understanding (MOU) between DOE, Northern Pass and SE Group - August 12, 2011 Memorandum of Understanding (MOU) between DOE, Northern Pass and SE Group - August 12, 2011 August 12, 2011 - 2:20pm Addthis The Department of Energy (DOE) has selected an integrated team of professionals from three environmental consulting firms to prepare the DOE Environmental Impact Statement (EIS) addressing the Northern Pass Presidential Permit application and signed a Memorandum of Understanding with the group. Addthis Related Articles Departments of State and Energy Establish Global Partnership to Green U.S. Embassies and Consulates Memorandum of Understanding (MOU) between DOE, Northern Pass and SE Group - August 12, 2011 DOE and FWS Sign New MOU on Migratory Bird Protection

445

PHaSE | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Text Size: A A A RSS Feeds FeedbackShare Page Polymer-Based Materials for Harvesting Solar Energy (PHaSE) Director(s): Thomas P. Russell and Paul M. Lahti Lead Institution:...

446

Time resolved fluorescence of CdSe nanocrystals using single molecule spectroscopy  

E-Print Network (OSTI)

A wide variety of spectroscopic studies of CdSe nanocrystals (NCs) are presented in this thesis, all studying some aspect of the temporal evolution of NC fluorescence tinder different conditions. In particular the methods ...

Fisher, Brent R

2005-01-01T23:59:59.000Z

447

Understanding and engineering the photophysics of single CdSe nanocrystals  

E-Print Network (OSTI)

This thesis focuses on uncovering the photophysics of CdSe semiconductor quantum dots (QDs) at the single QD level, and correlating the phenomenological behavior observed at the single QD level to that observed at the ...

Chung, Inhee, 1976-

2004-01-01T23:59:59.000Z

448

Preparation of DNA-Functionalised CdSe/ZnS Quantum Dots  

E-Print Network (OSTI)

We functionalised core-shell CdSe/ZnS quantum dots (QDots) with short-chain 3-mercaptopropionic acid (3MPA) to render these nanocrystalline semiconductor water-soluble. The ligand-exchange reaction was significantly improved ...

Pong, Boon Kin

449

Interband and intraband optical studies of CdSe colloidal nanocrystal films  

E-Print Network (OSTI)

We present results for optical measurements on charged CdSe nanocrystals. The injection of electrons into quantum confined states is confirmed by monitoring changes in the visible and infrared absorption spectra. Interestingly, ...

Toyama, Fumiaki, 1977-

2004-01-01T23:59:59.000Z

450

Development of a Diffusion Mobility Database for Cu-In-Se  

Science Conference Proceedings (OSTI)

... ? (Cu) 0.545 (Cu,In) 0.122 (In) 0.333 ?3 stoichiometric phases: • ? (Cu ... In in Se In in In Page 21. Modeling of Stoichiometric Intermetallic Phases ...

2012-10-04T23:59:59.000Z

451

New Thin Film CuGaSe2/Cu(In,Ga)Se2 Bifacial, Tandem Solar Cell with Both Junctions Formed Simultaneously  

Science Conference Proceedings (OSTI)

Thin films of CuGaSe2 and Cu(In,Ga)Se2 were evaporated by the 3-stage process onto opposite sides of a single piece of soda-lime glass, coated bifacially with an n+/-TCO. Junctions were formed simultaneously with each of the p-type absorbers by depositing thin films of n-CdS via chemical bath deposition (CBD) at 60C. The resulting four-terminal device is a non-mechanically stacked, two-junction tandem. The unique growth sequence protects the temperature-sensitive p/n junctions. The initial device (h= 3.7%, Voc= 1.1 V[AM1.5]) suffered from low quantum efficiencies. Initial results are also presented from experiments with variations in growth sequence and back reflectors.

Young, D. L.; Abu-Shama, J.; Noufi, R.; Li, X.; Keane, J.; Gessert, T. A.; Ward, J. S.; Contreas, M.; Symko-Davies, M.; Coutts, T. J.

2002-05-01T23:59:59.000Z

452

Unique Challenges Accompany Thick-Shell CdSe/nCdS (n > 10) Nanocrystal Synthesis  

SciTech Connect

Thick-shell CdSe/nCdS (n {ge} 10) nanocrystals were recently reported that show remarkably suppressed fluorescence intermittency or 'blinking' at the single-particle level as well as slow rates of Auger decay. Unfortunately, whereas CdSe/nCdS nanocrystal synthesis is well-developed up to n {le} 6 CdS monolayers (MLs), reproducible syntheses for n {ge} 10 MLs are less understood. Known procedures sometimes result in homogeneous CdS nucleation instead of heterogeneous, epitaxial CdS nucleation on CdSe, leading to broad and multimodal particle size distributions. Critically, obtained core/shell sizes are often below those desired. This article describes synthetic conditions specific to thick-shell growth (n {ge} 10 and n {ge} 20 MLs) on both small (sub2 nm) and large (>4.5 nm) CdSe cores. We find added secondary amine and low concentration of CdSe cores and molecular precursors give desired core/shell sizes. Amine-induced, partial etching of CdSe cores results in apparent shell-thicknesses slightly beyond those desired, especially for very-thick shells (n {ge} 20 MLs). Thermal ripening and fast precursor injection lead to undesired homogeneous CdS nucleation and incomplete shell growth. Core/shells derived from small CdSe (1.9 nm) have longer PL lifetimes and more pronounced blinking at single-particle level compared with those derived from large CdSe (4.7 nm). We expect our new synthetic approach will lead to a larger throughput of these materials, increasing their availability for fundamental studies and applications.

Guo, Y; Marchuk, K; Abraham, R; Sampat, S; Abraham, R.; Fang, N; Malko, AV; Vela, J

2011-12-23T23:59:59.000Z

453

Efficient cw lasing in a Cr{sup 2+}:CdSe crystal  

Science Conference Proceedings (OSTI)

Continuous wave lasing in a Cr{sup 2+}:CdSe crystal is obtained for the first time. The Cr{sup 2+}:CdSe crystal pumped by a 1.908-{mu}m thulium fibre laser generated 1.07 W at 2.623 {mu}m with the quantum slope efficiency with respect to the absorbed power equal to 60%. (letters)

Akimov, V A [Moscow Institute of Physics and Technology (State University), Dolgoprudnyi, Moscow Region (Russian Federation); Kozlovskii, V I; Korostelin, Yu V; Landman, A I; Podmar'kov, Yu P; Skasyrsky, Ya K; Frolov, M P [P.N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)

2007-11-30T23:59:59.000Z

454

Non-H{sub 2}Se, ultra-thin CuInSe{sub 2} devices. Annual subcontract report, November 10, 1992--November 9, 1993  

DOE Green Energy (OSTI)

This report describes advances made during Phase II (November 10, 1992-November 9, 1993) of a three-phase, cost-shared subcontract whose ultimate goal is the demonstration of thin film CuInSe{sub 2} photovoltaic modules prepared by methods adaptable to safe, high yield, high volume manufacturing. At the end of Phase I, EPV became one of the first groups to clear the 10% efficiency barrier for CIS cells prepared by non-H{sub 2}Se selenization. During Phase II a total area efficiency of 12.5% was achieved for a 1 cm{sup 2} cell. The key achievement of Phase II was the production of square foot CIS modules without the use of H{sub 2}Se. This is seen as a crucial step towards the commercialization of CIS. Using a novel interconnect technology, EPV delivered an 8.0% aperture area efficiency mini-module and a 6.2% aperture area efficiency 720 cm{sub 2} module to NREL. On the processing side, advances were made in precursor formation and the selenization profile, both of which contributed to higher quality CIS. The higher band gap quaternary chalcopyrite material CuIn(S{sub x}, Se{sub 1{minus}X}){sub 2} was prepared and 8% cells were fabricated using this material. Device analysis revealed a correlation between long wavelength quantum efficiency and the CIS Cu/In ratio. Temperature dependent studies highlighted the need for high V{sub OC} devices to minimize the impact of the voltage drop at operating temperature. Numerical modeling of module performance was performed in order to identify the correct ZnO sheet resistance for modules. Efforts in Phase III will focus on increase of module efficiency to 9-10%, initiation of an outdoor testing program, preparation of completely uniform CIS plates using second generation selenization equipment, and exploration of alternative precursors for CIS formation.

Delahoy, A.E.; Britt, J.; Faras, F.; Kiss, Z. [Energy Photovoltaics, Inc., Princeton, NY (United States)

1994-09-01T23:59:59.000Z

455

Hidden Superlattice in Tl2(SC6H4S) and Tl2(SeC6H4Se) Solved from Powder X-ray Diffraction  

SciTech Connect

The crystal structures of the isostructural title compounds poly[({mu}-benzene-1,4-dithiolato)dithallium], Tl{sub 2}(SC{sub 6}H{sub 4}S), and poly[({mu}-benzene-1,4-diselenolato)dithallium], Tl{sub 2}(SeC{sub 6}H{sub 4}Se), were solved by simulated annealing from high-resolution synchrotron X-ray powder diffraction. Rietveld refinements of an initial structure with one formula unit per triclinic cell gave satisfactory agreement with the data, but led to a structure with impossibly close non-bonded contacts. A disordered model was proposed to alleviate this problem, but an alternative supercell structure leads to slightly improved agreement with the data. The isostructural superlattice structures were confirmed for both compounds through additional data collection, with substantially better counting statistics, which revealed the presence of very weak superlattice peaks not previously seen. Overall, each structure contains Tl-S or Tl-Se two-dimensional networks, connected by phenylene bridges. The sulfur (or selenium) coordination sphere around each thallium is a highly distorted square pyramid or a 'see-saw' shape, depending upon how many Tl-S or Tl-Se interactions are considered to be bonds. In addition, the two compounds contain pairs of Tl{sup I} ions that interact through a closed-shell 'thallophilic' interaction: in the sulfur compound there are two inequivalent pairs of Tl atoms with Tl-Tl distances of 3.49 and 3.58 {angstrom}, while in the selenium compound those Tl-Tl interactions are at 3.54 and 3.63 {angstrom}.

K Stone; D Turner; M Singh; T Vaid; P Stephens

2011-12-31T23:59:59.000Z

456

The Fate of MAb targeted Cd125mTe/ZnS nanoparaticles in vivo  

Science Conference Proceedings (OSTI)

Nanoparticles (NP) have potential as carriers for drugs and radioisotopes. Quantitative measures of NP biodistribution in vivo are needed to determine the effectiveness of these carriers. We have used a model system of radiolabeled quantum dots to document the competition between efficient vascular targeting and interaction of the NP with the reticuloendothelial (RE) system. We have prepared (125m)Te-labeled CdTe NP that are capped with ZnS. Te-125m has a half-life and decay characteristics very similar to those for (125)I. The synthesized particles are stable in aqueous solution and are derivatized with mercaptoacetic acid and then conjugated with specific antibody. To evaluate specific targeting, we used the monoclonal antibody MAb 201B that binds to murine thrombomodulin expressed in the lumen of lung blood vessels. The MAb-targeted NP were tested for targeting performance in vivo using single-photon emission computed tomography (SPECT)/computed tomography (CT) imaging, tissue autoradiography and standard organ biodistribution techniques. Biodistribution was also determined in mice that had been depleted of phagocytic cells by use of clodronate-loaded liposomes. Cd(125m)Te/ZnS NP coupled with MAb 201B retained radioisotope and antibody activity and accumulated in lung (>400% injected dose [ID]/g) within 1 h of intravenous injection. Control antibody-coupled NP did not accumulate in lung (<10% ID/g) but accumulated in liver and spleen. Images from microSPECT/CT and autoradiography studies of the targeted NP document this specific uptake and demonstrate uniform distribution in lung with minor accumulation in liver and spleen. Within a few hours, a large fraction of lung-targeted NP redistributed to spleen and liver or was excreted. We hypothesized that NP attract phagocytic cells that engulfed and removed them from circulation. This was confirmed by comparing biodistribution of targeted NP in normal mice versus those depleted of phagocytic cells. In mice treated with clodronate liposomes, accumulation of NP in liver was reduced by fivefold, while accumulation in lung at 1 h was enhanced by approximately 50%. By 24 h, loss of the targeted NP from lung was inhibited by several-fold, while accumulation in liver and spleen remained constant. Thus, the treated mice had a much larger accumulation and retention of the NP at the target site and a decrease in dose to other organs except spleen. Nanoparticles composed of CdTe, labeled with (125m)Te and capped with ZnS, can be targeted with MAb to sites in the lumen of lung vasculature. In clodronate-treated mice, which have a temporary depletion of phagocytic cells, accumulation in liver was reduced dramatically, whereas that in spleen was not. The targeting to lung was several-fold more efficient in clodronate-treated mice due to larger initial accumulation and better retention of the MAb-targeted NP at that site. This model system indicates that targeting of NP preparations is a competition between the effectiveness of the targeting agent and the natural tendency for RE uptake of the particles. Temporary inhibition of the RE system may enhance the usefulness of NP for drug and radioisotope delivery.

Kennel, Steve J [ORNL; Woodward, Jonathan [ORNL; Rondinone, Adam Justin [ORNL; Wall, Jonathan [ORNL; Mirzadeh, Saed [ORNL

2008-01-01T23:59:59.000Z

457

The Crystallization Behavior of Stochiometric and Off-stochiometric Ga-Sb-Te Materials for Phase-Change Memory  

Science Conference Proceedings (OSTI)

The stoichiometric Ga{sub 4}Sb{sub 6}Te{sub 3} and Ga-Sb materials were systematically studied. The alloy Ga{sub 4}Sb{sub 6}Te{sub 3} shows a fast crystallization speed, very high crystallization temperature, T{sub x}, and high electrical contrast. Although stoichiometric GaSb has similar performance and even faster crystallization speed, the electrical contrast is much lower. The other off-stoichiometric compounds we studied all have higher T{sub x} than Ge{sub 2}Sb{sub 2}Te{sub 5} indicating a good amorphous stability. By raising the Sb/Te ratio with GaSb incorporation, T{sub x} and the recrystallization time of melt-quenched, amorphous samples can be effectively increased. The stoichiometric Ga{sub 4}Sb{sub 6}Te{sub 3} with less likelihood of phase-segregation compared to nonstoichiometric compounds is a promising candidate for phase-change memory.

H Cheng; S Raoux; J Jordan-Sweet

2011-12-31T23:59:59.000Z

458

Investigation of Junction Properties in CdS/CdTe Solar Cells and Their Correlation to Device Properties: Preprint  

DOE Green Energy (OSTI)

Secondary-ion mass spectrometry analysis of the CdS/CdTe interface shows that S diffusion in CdTe increases with substrate temperature and CdCl2 heat treatment. There is also an accumulation of Cl at the interface for CdCl2-treated samples. Modulated photo-reflectance studies shows that devices with CdCl2 heat treatment and open-circuit voltage (Voc) of 835 mV have a distinct high electric-field region in the layer with bandgap of 1.45 eV. Electron-beam induced current measurements reveal a one-sided junction for high Voc devices. The nature of the junction changes with processing. For heterojunction devices, the depletion region includes the highly defective CdS/CdTe interface, which would increase the recombination current and consequently the dark current, leading to lower Voc. In the case of CdCl2-treated cells, the n+-p junction and its high electric-field results in the junction between structurally compatible CdTe and the Te-rich CdSTe alloy, and thus, in higher Voc.

Dhere, R. G.; Zhang, Y.; Romero, M. J.; Asher, S. E.; Young, M.; To, B.; Noufi, R.; Gessert, T. A.

2008-05-01T23:59:59.000Z

459

Energy spectrum of charge carriers in Ag{sub 2}Te  

Science Conference Proceedings (OSTI)

Conductivity {sigma}(T) and Hall constant R(B, T) are studied for Ag{sub 2}Te with excess 0.1% of Te. The change in the R sign from (-) to (+) is found in dependences R(B) at various temperatures. In the temperature dependences of R in a range of 1-3 kG, two extrema are found, namely, minimum at T {approx} 60 and maximum at T {approx} 80 K, and at B {>=} 5 kG, the double change in sign of R from (-) to (+) and from (+) to (-) is found. Temperatures of sign inversion for R depend on the magnetic field. At B = 15 kG, the sign of R varies from (-) to (+) at T {approx} 38 K, and from (+) to (-) at T {approx} 70 K. It is found approximately in the region of the change in the sign of R(T), the concentration n(T) and electrical conductivity pass through the minimum. It is established that the minima of n(T) and {sigma}(T), extrema in R(T), and sign inversion for R(T) from (-) to (+) as well as the overestimated temperature dependence n{infinity}T{sup 4} are caused by localization of conduction electrons at acceptor levels entering the conduction band of Ag{sub 2}Te. The values of parameters of electrons (n, {mu}{sub n}) and holes (p, {mu}{sub p}) at the points of the change in the sign of R(T) from (-) to (+) and from (+) to (-) are determined.

Aliyev, S. A.; Agayev, Z. F., E-mail: agayevz@rambler.ru; Selimzadeh, R. I. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

2008-12-15T23:59:59.000Z

460

Quantum Anomalous Hall Effect in Hg_1-yMn_yTe Quantum Wells  

SciTech Connect

The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum anomalous Hall effect, can be realized in Hg{sub 1-y}Mn{sub y}Te quantum wells, without the external magnetic field and the associated Landau levels. This effect arises purely from the spin polarization of the Mn atoms, and the quantized Hall conductance is predicted for a range of quantum well thickness and the concentration of the Mn atoms. This effect enables dissipationless charge current in spintronics devices.

Liu, Chao-Xing; /Tsinghua U., Beijing /Stanford U., Phys. Dept.; Qi, Xiao-Liang; /Stanford U., Phys. Dept.; Dai, Xi; Fang, Zhong; /Beijing, Inst. Phys.; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

2010-03-19T23:59:59.000Z

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