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Sample records for uup se te

  1. Heterojunctions of model CdTe/CdSe mixtures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-03-18

    We report on the strain behavior of compound mixtures of model group II-VI semiconductors. We use the Stillinger-Weber Hamiltonian that we recently introduced, specifically developed to model binary mixtures of group II-VI compounds such as CdTe and CdSe. We also employ molecular dynamics simulations to examine the behavior of thin sheets of material, bilayers of CdTe and CdSe. The lattice mismatch between the two compounds leads to a strong bending of the entire sheet, with about a 0.5 to 1° deflection between neighboring planes. To further analyze bilayer bending, we introduce a simple one-dimensional model and use energy minimization tomore » find the angle of deflection. The analysis is equivalent to a least-squares straight line fit. We consider the effects of bilayers which are asymmetric with respect to the thickness of the CdTe and CdSe parts. We thus learn that the bending can be subdivided into four kinds depending on the compressive/tensile nature of each outer plane of the sheet. We use this approach to directly compare our findings with experimental results on the bending of CdTe/CdSe rods. To reduce the effects of the lattice mismatch we explore diffuse interfaces, where we mix (i.e. alloy) Te and Se, and estimate the strain response.« less

  2. Heterojunctions of model CdTe/CdSe mixtures

    SciTech Connect (OSTI)

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-03-18

    We report on the strain behavior of compound mixtures of model group II-VI semiconductors. We use the Stillinger-Weber Hamiltonian that we recently introduced, specifically developed to model binary mixtures of group II-VI compounds such as CdTe and CdSe. We also employ molecular dynamics simulations to examine the behavior of thin sheets of material, bilayers of CdTe and CdSe. The lattice mismatch between the two compounds leads to a strong bending of the entire sheet, with about a 0.5 to 1° deflection between neighboring planes. To further analyze bilayer bending, we introduce a simple one-dimensional model and use energy minimization to find the angle of deflection. The analysis is equivalent to a least-squares straight line fit. We consider the effects of bilayers which are asymmetric with respect to the thickness of the CdTe and CdSe parts. We thus learn that the bending can be subdivided into four kinds depending on the compressive/tensile nature of each outer plane of the sheet. We use this approach to directly compare our findings with experimental results on the bending of CdTe/CdSe rods. To reduce the effects of the lattice mismatch we explore diffuse interfaces, where we mix (i.e. alloy) Te and Se, and estimate the strain response.

  3. Heterojunctions of model CdTe/CdSe mixtures

    SciTech Connect (OSTI)

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-03-18

    We report on the strain behavior of compound mixtures of model group IIVI semiconductors. We use the StillingerWeber Hamiltonian that we recently introduced, specifically developed to model binary mixtures of group IIVI compounds such as CdTe and CdSe. We also employ molecular dynamics simulations to examine the behavior of thin sheets of material, bilayers of CdTe and CdSe. The lattice mismatch between the two compounds leads to a strong bending of the entire sheet, with about a 0.5 to 1 deflection between neighboring planes. To further analyze bilayer bending, we introduce a simple one-dimensional model and use energy minimization to find the angle of deflection. The analysis is equivalent to a least-squares straight line fit. We consider the effects of bilayers which are asymmetric with respect to the thickness of the CdTe and CdSe parts. We thus learn that the bending can be subdivided into four kinds depending on the compressive/tensile nature of each outer plane of the sheet. We use this approach to directly compare our findings with experimental results on the bending of CdTe/CdSe rods. To reduce the effects of the lattice mismatch we explore diffuse interfaces, where we mix (i.e. alloy) Te and Se, and estimate the strain response.

  4. Reverse Monte Carlo simulation of Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} glasses

    SciTech Connect (OSTI)

    Abdel-Baset, A. M.; Rashad, M.; Moharram, A. H.

    2013-12-16

    Two-dimensional Monte Carlo of the total pair distribution functions g(r) is determined for Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} alloys, and then it used to assemble the three-dimensional atomic configurations using the reverse Monte Carlo simulation. The partial pair distribution functions g{sub ij}(r) indicate that the basic structure unit in the Se{sub 80}Te{sub 15}Sb{sub 5} glass is di-antimony tri-selenide units connected together through Se-Se and Se-Te chain. The structure of Se{sub 80}Te{sub 20} alloys is a chain of Se-Te and Se-Se in addition to some rings of Se atoms.

  5. Thermodynamic properties of model CdTe/CdSe mixtures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-02-20

    We report on the thermodynamic properties of binary compound mixtures of model groups II–VI semiconductors. We use the recently introduced Stillinger–Weber Hamiltonian to model binary mixtures of CdTe and CdSe. We use molecular dynamics simulations to calculate the volume and enthalpy of mixing as a function of mole fraction. The lattice parameter of the mixture closely follows Vegard's law: a linear relation. This implies that the excess volume is a cubic function of mole fraction. A connection is made with hard sphere models of mixed fcc and zincblende structures. We found that the potential energy exhibits a positive deviation frommore » ideal soluton behaviour; the excess enthalpy is nearly independent of temperatures studied (300 and 533 K) and is well described by a simple cubic function of the mole fraction. Using a regular solution approach (combining non-ideal behaviour for the enthalpy with ideal solution behaviour for the entropy of mixing), we arrive at the Gibbs free energy of the mixture. The Gibbs free energy results indicate that the CdTe and CdSe mixtures exhibit phase separation. The upper consolute temperature is found to be 335 K. Finally, we provide the surface energy as a function of composition. Moreover, it roughly follows ideal solution theory, but with a negative deviation (negative excess surface energy). This indicates that alloying increases the stability, even for nano-particles.« less

  6. CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor

    SciTech Connect (OSTI)

    Sedova, I. V. Lyublinskaya, O. G.; Sorokin, S. V.; Sitnikova, A. A.; Toropov, A. A.; Donatini, F.; Dang, Si Le; Ivanov, S. V.

    2007-11-15

    A procedure for formation of CdSe quantum dots (QDs) in a ZnSe matrix is suggested. The procedure is based on the introduction of a CdTe submonolayer stressor deposited on the matrix surface just before deposition of the material of the QDs. (For CdTe/ZnSe structure, the relative lattice mismatch is {delta}a/a {approx} 14%.) The stressor forms small strained islands at the ZnSe surface, thus producing local fields of high elastic stresses controlling the process of the self-assembling of the QDs. According to the data of transmission electron microscopy, this procedure allows a considerable increase in the surface density of QDs, with a certain decrease in their lateral dimensions (down to 4.5 {+-} 1.5 nm). In the photoluminescence spectra, a noticeable ({approx}150 meV) shift of the peak to longer wavelengths from the position of the reference CdSe/ZnSe QD structure is observed. The shift is due to some transformation of the morphology of the QDs and an increase in the Cd content in the QDs. Comprehensive studies of the nanostructures by recording and analyzing the excitation spectra of photoluminescence, the time-resolved photoluminescence spectra, and the cathodoluminescence spectra show that the emission spectra involve two types of optical transitions, namely, the type-I transitions in the CdSeTe/ZnSe QDs and the type-II transitions caused mainly by the low cadmium content (Zn,Cd)(Se,Te)/ZnSe layer formed between the QDs.

  7. Role of polycrystallinity in CdTe and CuInSe sub 2 photovoltaic cells

    SciTech Connect (OSTI)

    Sites, J.R. )

    1991-01-01

    The polycrystalline nature of thin-film CdTe and CuInSe{sub 2} solar cells continues to be a major factor in several individual losses that limit overall cell efficiency. This report describes progress in the quantitative separation of these losses, including both measurement and analysis procedures. It also applies these techniques to several individual cells to help document the overall progress with CdTe and CuInSe{sub 2} cells. Notably, CdTe cells from Photon Energy have reduced window photocurrent losses to 1 mA/Cm{sup 2}; those from the University of South Florida have achieved a maximum power voltage of 693 mV; and CuInSe{sub 2} cells from International Solar Electric Technology have shown a hole density as high as 7 {times} 10{sup 16} cm{sup {minus}3}, implying a significant reduction in compensation. 9 refs.

  8. Thermoelectric properties of polycrystalline In4Se3 and In4Te3

    SciTech Connect (OSTI)

    Shi, Xun; Cho, Jung Y; Salvador, James R.; Yang, Jihui; Wang, Hsin

    2010-01-01

    High thermoelectric performance of a single crystal layered compound In{sub 4}Se{sub 3} was reported recently. We present here an electrical and thermal transport property study over a wide temperature range for polycrystalline samples of In{sub 4}Se{sub 3} and In{sub 4}Te{sub 3}. Our data demonstrate that these materials are lightly doped semiconductors, leading to large thermopower and resistivity. Very low thermal conductivity, below 1 W/m K, is observed. The power factors for In{sub 4}Se{sub 3} and In{sub 4}Te{sub 3} are much smaller when compared with state-of-the-art thermoelectric materials. This combined with the very low thermal conductivity results in the maximum ZT value of less than 0.6 at 700 K for In{sub 4}Se{sub 3}.

  9. Low-temperature photoluminescence analysis of CdTeSe crystals for radiation-detector applications

    SciTech Connect (OSTI)

    YANG G.; Roy, U. N.; Bolotnikov, A. E.; Cui, Y.; Camarda, G.S.; Hossain, A.; and James, R. B.

    2015-10-05

    Goal: Understanding the changes of material defects in CdTeSe following annealing. Experimental results and discussions: Infrared (IR) transmission microscopy; current-voltage measurements (Highlight: Improvement of resistivity of un-doped crystals after annealing); low-temperature photoluminescence (PL) spectrum of as-grown and annealed samples.

  10. Local-moment magnetism in superconducting FeTe0.35Se0.65 as seen...

    Office of Scientific and Technical Information (OSTI)

    Local-moment magnetism in superconducting FeTe0.35Se0.65 as seen via inelastic neutron scattering Prev Next Title: Local-moment magnetism in superconducting FeTe0.35Se0.65 as ...

  11. Resonance photoelectron spectroscopy of TiX{sub 2} (X = S, Se, Te) titanium dichalcogenides

    SciTech Connect (OSTI)

    Shkvarin, A. S. Yarmoshenko, Yu. M.; Skorikov, N. A.; Yablonskikh, M. V.; Merentsov, A. I.; Shkvarina, E. G.; Titov, A. N.

    2012-11-15

    The photoelectron valence band spectra of TiS{sub 2}, TiSe{sub 2}, and TiTe{sub 2} dichalcogenides are investigated in the Ti 2p-3d resonance regime. Resonance bands in the vicinity of the Fermi energy are found for TiS{sub 2} and TiTe{sub 2}. The nature of these bands is analyzed based on model calculations of the density of electronic states in TiS{sub 2}, TiSe{sub 2}, and TiTe{sub 2} compounds intercalated by titanium atoms. Analysis of experimental data and their comparison with model calculations showed that these bands have different origins. It is found that the resonance enhancement of an additional band observed in TiS{sub 2} is explained by self-intercalation by titanium during the synthesis of this compound. The resonance enhancement in TiTe{sub 2} is caused by occupation of the 3d band in Ti.

  12. Photoluminescence studies of type-II CdSe/CdTe superlattices

    SciTech Connect (OSTI)

    Li Jingjing; Johnson, Shane R.; Wang Shumin; Ding Ding; Ning Cunzheng; Zhang Yonghang; Yin Leijun; Skromme, B. J.; Liu Xinyu; Furdyna, Jacek K.

    2012-08-06

    CdSe/CdTe type-II superlattices grown on GaSb substrates by molecular beam epitaxy are studied using time-resolved and steady-state photoluminescence (PL) spectroscopy at 10 K. The relatively long carrier lifetime of 188 ns observed in time-resolved PL measurements shows good material quality. The steady-state PL peak position exhibits a blue shift with increasing excess carrier concentration. Self-consistent solutions of the Schroedinger and Poisson equations show that this effect can be explained by band bending as a result of the spatial separation of electrons and holes, which is critical confirmation of a strong type-II band edge alignment between CdSe and CdTe.

  13. CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

    SciTech Connect (OSTI)

    Li Jingjing; Liu Shi; Wang Shumin; Ding Ding; Johnson, Shane R.; Zhang Yonghang; Liu Xinyu; Furdyna, Jacek K.; Smith, David J.

    2012-03-19

    CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63 {+-} 0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.

  14. Electronic structure of titanium dichalcogenides TiX{sub 2} (X = S, Se, Te)

    SciTech Connect (OSTI)

    Shkvarin, A. S. Yarmoshenko, Yu. M.; Skorikov, N. A.; Yablonskikh, M. V.; Merentsov, A. I.; Shkvarina, E. G.; Titov, A. N.

    2012-01-15

    The electronic structure and the chemical bond in titanium dichalcogenides TiX{sub 2} (X = S, Se, Te), which are promising electrode materials for lithium batteries, are studied experimentally and theoretically. It is found that the X-ray photoelectron spectra of the valence bands and the core levels of titanium and its X-ray L{sub 2,3} absorption spectra demonstrate a change in the ionic and covalent components of the chemical bond in these compounds. The densities of states in these compounds are calculated by the full-potential augmented-plane-wave method, and multiplet calculations of the X-ray L{sub 2,3} absorption spectra of titanium are performed. It is shown that, in the row TiS{sub 2}-TiSe{sub 2}-TiTe{sub 2}, the covalence increases, the ionicity of the chemical bond decreases, and the effect of the crystal field of a ligand is weakened.

  15. Connecting thermoelectric performance and topological-insulator behavior: Bi2Te3 and Bi2Te2Se from first principles

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shi, Hongliang; Parker, David S.; Du, Mao-Hua; Singh, David J.

    2015-01-20

    Thermoelectric performance is of interest for numerous applications such as waste-heat recovery and solid-state energy conversion and will be seen to be closely connected to topological-insulator behavior. In this paper, we here report first-principles transport and defect calculations for Bi2Te2Se in relation to Bi2Te3. The two compounds are found to contain remarkably different electronic structures in spite of being isostructural and isoelectronic. We also discuss these results in terms of the topological-insulator characteristics of these compounds.

  16. Quantifying electron-phonon coupling in CdTe{sub 1−x}Se{sub x} nanocrystals via coherent phonon manipulation

    SciTech Connect (OSTI)

    Spann, B. T.; Xu, X.

    2014-08-25

    We employ ultrafast transient absorption spectroscopy with temporal pulse shaping to manipulate coherent phonon excitation and quantify the strength of electron-phonon coupling in CdTe{sub 1−x}Se{sub x} nanocrystals (NCs). Raman active CdSe and CdTe longitudinal optical phonon (LO) modes are excited and probed in the time domain. By temporally controlling pump pulse pairs to coherently excite and cancel coherent phonons in the CdTe{sub 1−x}Se{sub x} NCs, we estimate the relative amount of optical energy that is coupled to the coherent CdSe LO mode.

  17. Magneto-optical characterizations of FeTe???Se??? thin films with critical current density over 1 MA/cm

    SciTech Connect (OSTI)

    Sun, Yue; Li, Qiang; Tsuchiya, Yuji; Pyon, Sunseng; Tamegai, Tsuyoshi; Zhang, Cheng; Ozaki, Toshinori

    2015-01-01

    We performed magneto-optical (MO) measurements on FeTe???Se??? thin films grown on LaAlO? (LAO) and Yttria-stabilized zirconia (YSZ) single-crystalline substrates. These thin films show superconducting transition temperature Tc ~19 K, 4 K higher than the bulk sample. Typical roof-top patterns can be observed in the MO images of thin films grown on LAO and YSZ, from which a large and homogeneous critical current density Jc ~ 3 - 4 x 10? A/cm at 5 K was obtained. Magnetic flux penetration measurement reveals that the current is almost isotropically distributed in the two thin films. Compared with bulk crystals, FeTe???Se??? thin film demonstrates not only higher Tc, but also much larger Jc, which is attractive for applications.

  18. Optic phonon bandwidth and lattice thermal conductivity: The case of Li2X ( X=O , S, Se, Te)

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mukhopadhyay, S.; Lindsay, L.; Parker, D. S.

    2016-06-07

    Here, we examine the lattice thermal conductivities ( l) of Li2X (X=O, S, Se, Te) using a first-principles Peierls-Boltzmann transport methodology. We find low l values ranging between 12 and 30 W/m-K despite light Li atoms, a large mass difference between constituent atoms and tightly bunched acoustic branches, all features that give high l in other materials including BeSe (630 W/m-1K-1), BeTe (370 W/m-1K-1) and cubic BAs (3150 W/m-1K-1). Together these results suggest a missing ingredient in the basic guidelines commonly used to understand and predict l. Unlike typical simple systems (e.g., Si, GaAs, SiC), the dominant resistance to heat-carryingmore » acoustic phonons in Li2Se and Li2Te comes from interactions of these modes with two optic phonons. These interactions require significant bandwidth and dispersion of the optic branches, both present in Li2X materials. Finally, these considerations are important for the discovery and design of new materials for thermal management applications, and give a more comprehensive understanding of thermal transport in crystalline solids.« less

  19. Two-dimensional topological insulators with tunable band gaps: Single-layer HgTe and HgSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Jin; He, Chaoyu; Meng, Lijun; Xiao, Huaping; Tang, Chao; Wei, Xiaolin; Kim, Jinwoong; Kioussis, Nicholas; Stocks, G. Malcolm; Zhong, Jianxin

    2015-09-14

    Here, we report that two-dimensional (2D) topological insulators (TIs) with large band gaps are of great importance for the future applications of quantum spin Hall (QSH) effect. Employing ab initio electronic calculations we propose a novel type of 2D topological insulators, the monolayer (ML) low-buckled (LB) mercury telluride (HgTe) and mercury selenide (HgSe), with tunable band gap. We demonstrate that LB HgTe (HgSe) monolayers undergo a trivial insulator to topological insulator transition under in-plane tensile strain of 2.6% (3.1%) due to the combination of the strain and the spin orbital coupling (SOC) effects. Furthermore, the band gaps can be tunedmore » up to large values (0.2 eV for HgTe and 0.05 eV for HgSe) by tensile strain, which far exceed those of current experimentally realized 2D quantum spin Hall insulators. Our results suggest a new type of material suitable for practical applications of 2D TI at room-temperature.« less

  20. Thermal stability and thermoelectric properties of Cu{sub x}As{sub 40−x}Te{sub 60−y}Se{sub y} semiconducting glasses

    SciTech Connect (OSTI)

    Vaney, J.B.; Piarristeguy, A.; Pradel, A.; Alleno, E.; Lenoir, B.; Candolfi, C.; Dauscher, A.; Gonçalves, A.P.; Lopes, E.B.; Monnier, J.; Ribes, M.; Godart, C.

    2013-07-15

    We report on the thermal behavior and thermoelectric properties of bulk chalcogenide glasses in the systems Cu{sub x}As{sub 40−x}Te{sub 60} (20≤x≤32.5) and Cu{sub x}As{sub 40−x}Te{sub 60−y}Se{sub y}, (0≤y≤9) synthesized by conventional melt-quenching techniques. The thermal stability of these glasses was probed by differential scanning calorimetry to determine the characteristic T{sub g} and ΔT temperatures, both of which increasing noticeably with y. Thermoelectric properties were found to be mainly influenced by the Cu concentration with respect to the Se content. The thermal conductivity is practically composition-independent throughout the compositional range covered. A maximum ZT value of 0.02 at 300 K increasing to 0.06 at 375 K was achieved for the composition Cu{sub 30}As{sub 10}Te{sub 54}Se{sub 6}. - Graphical abstract: Effect of substitution of Te by Se and As by Cu on thermal stability and thermoelectric properties of Cu{sub x}As{sub 40−x}Te{sub 60−y}Se{sub y} semiconducting glasses. - Highlights: • We studied substitution of Te by Se in Cu–As–Te thermoelectric chalcogenide glasses. • Cu–As–Te–Se glasses were prepared by conventional melt-quenching method. • Se inclusion increases thermal stability in Cu–As–Te glasses. • Increasing copper concentration enhances thermoelectric properties. • ZT of 0.02 was achieved at 300 K and 0.06 at 375 K.

  1. Electronic structure, transport, and phonons of SrAgChF (Ch = S,Se,Te): Bulk superlattice thermoelectrics

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gudelli, Vijay Kumar; Kanchana, V.; Vaitheeswaran, G.; Singh, David J.; Svane, Axel; Christensen, Niels Egede; Mahanti, Subhendra D.

    2015-07-15

    Here, we report calculations of the electronic structure, vibrational properties, and transport for the p-type semiconductors, SrAgChF (Ch = S, Se, and Te). We find soft phonons with low frequency optical branches intersecting the acoustic modes below 50 cm–1, indicative of a material with low thermal conductivity. The bands at and near the valence-band maxima are highly two-dimensional, which leads to high thermopowers even at high carrier concentrations, which is a combination that suggests good thermoelectric performance. These materials may be regarded as bulk realizations of superlattice thermoelectrics.

  2. Point defects in CdTexSe1-x crystals grown from a Te-rich solution for applications in detecting radiation

    SciTech Connect (OSTI)

    Gul, R.; Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Hossain, A.; Lee, W.; Yang, G.; Burger, A.; James, R. B.; Cui, Y.

    2015-04-15

    We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from (1–30) V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.

  3. Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography

    SciTech Connect (OSTI)

    Bonef, Bastien; Rouvire, Jean-Luc; Jouneau, Pierre-Henri; Bellet-Amalric, Edith; Grard, Lionel; Mariette, Henri; Andr, Rgis; Bougerol, Catherine; Grenier, Adeline

    2015-02-02

    High resolution scanning transmission electron microscopy and atom probe tomography experiments reveal the presence of an intermediate layer at the interface between two binary compounds with no common atom, namely, ZnTe and CdSe for samples grown by Molecular Beam Epitaxy under standard conditions. This thin transition layer, of the order of 1 to 3 atomic planes, contains typically one monolayer of ZnSe. Even if it occurs at each interface, the direct interface, i.e., ZnTe on CdSe, is sharper than the reverse one, where the ZnSe layer is likely surrounded by alloyed layers. On the other hand, a CdTe-like interface was never observed. This interface knowledge is crucial to properly design superlattices for optoelectronic applications and to master band-gap engineering.

  4. Role of polycrystallinity in CdTe and CuInSe{sub 2} photovoltaic cells. Annual subcontract report, 1 April 1990--31 March 1991

    SciTech Connect (OSTI)

    Sites, J.R.

    1991-12-31

    The polycrystalline nature of thin-film CdTe and CuInSe{sub 2} solar cells continues to be a major factor in several individual losses that limit overall cell efficiency. This report describes progress in the quantitative separation of these losses, including both measurement and analysis procedures. It also applies these techniques to several individual cells to help document the overall progress with CdTe and CuInSe{sub 2} cells. Notably, CdTe cells from Photon Energy have reduced window photocurrent losses to 1 mA/Cm{sup 2}; those from the University of South Florida have achieved a maximum power voltage of 693 mV; and CuInSe{sub 2} cells from International Solar Electric Technology have shown a hole density as high as 7 {times} 10{sup 16} cm{sup {minus}3}, implying a significant reduction in compensation. 9 refs.

  5. Structural and compositional dependence of the CdTexSe1-x alloy layer photoactivity in CdTe-based solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Poplawsky, Jonathan D.; Guo, Wei; Paudel, Naba; Ng, Amy; More, Karren; Leonard, Donovan; Yan, Yanfa

    2016-07-27

    The published external quantum efficiency data of the world-record CdTe solar cell suggests that the device uses bandgap engineering, most likely with a CdTexSe1₋x alloy layer to increase the short-circuit current and overall device efficiency. Here atom probe tomography, transmission electron microscopy and electron beam-induced current are used to clarify the dependence of Se content on the photoactive properties of CdTexSe1₋x alloy layers in bandgap-graded CdTe solar cells. Four solar cells were prepared with 50, 100, 200 and 400 nm-thick CdSe layers to reveal the formation, growth, composition, structure and photoactivity of the CdTexSe1₋x alloy with respect to the degreemore » of Se diffusion. Finally, the results show that the CdTexSe1₋x layer photoactivity is highly dependent on the crystalline structure of the alloy (zincblende versus wurtzite), which is also dependent on the Se and Te concentrations.« less

  6. Effect of thermal annealing on structure and optical band gap of Se{sub 66}Te{sub 25}In{sub 9} thin films

    SciTech Connect (OSTI)

    Dwivedi, D. K.; Pathak, H. P.; Shukla, Nitesh; Kumar, Vipin

    2015-05-15

    Thin films of a-Se{sub 66}Te{sub 25}In{sub 9} have been deposited onto a chemically cleaned glass substrate by thermal evaporation technique under vacuum. Glassy nature of the films has been ascertained by X-ray diffraction pattern. The analysis of absorption spectra, measured at normal incidence, in the spectral range 400-1100 nm has been used for the optical characterization of thin films under investigation. The effect of thermal annealing on structure and optical band gap (E{sub g}) of a-Se{sub 66}Te{sub 25}In{sub 9} have been studied.

  7. Te

    U.S. Energy Information Administration (EIA) Indexed Site

    N u n a v u t O n t a r i o A l b e r t a Te x a s N o r t h w e s t Te r r i t o r i e s M a n i t o b a B r i t i s h C o l u m b i a S a s k a t c h e w a n Y u k o n M o n t a n a U t a h I d a h o C a l i f o r n i a N e v a d a O r e g o n A r i z o n a I o w a K a n s a s C o l o r a d o W y o m i n g S o n o r a N e w M e x i c o M i n n e s o t a N e b r a s k a O h i o C h i h u a h u a I l l i n o i s M i s s o u r i F l o r i d a G e o r g i a O k l a h o m a W a s h i n g t o n S o

  8. Te

    U.S. Energy Information Administration (EIA) Indexed Site

    A l a s k a N u n a v u t O n t a r i o A l b e r t a Te x a s N o r t h w e s t Te r r i t o r i e s M a n i t o b a B r i t i s h C o l u m b i a S a s k a t c h e w a n Y u k o n M o n t a n a U t a h I d a h o C a l i f o r n i a N e v a d a O r e g o n A r i z o n a I o w a K a n s a s C o l o r a d o W y o m i n g S o n o r a N e w M e x i c o M i n n e s o t a N e b r a s k a O h i o C h i h u a h u a I l l i n o i s M i s s o u r i F l o r i d a G e o r g i a O k l a h o m a W a s h i n

  9. Te

    U.S. Energy Information Administration (EIA) Indexed Site

    D u N o r d - O u e s t Te r r e - N e u v e - e t - L a b r a d o r Q u é b e c Í l e - d u - P r i n c e - É d o u a r d N o u v e l l e - É c o s s e N o u v e a u - B r u n s w i c k C o l o m b i e - B r i t a n n i q u e B a f f i n I s l a n d Í l e d u B a f f i n E l l e s m e r e I s l a n d Í l e d u E l l e s m e r e V i c t o r i a I s l a n d Í l e d u V i c t o r i a N e w f o u n d l a n d a n d L a b r a d o r Te r r e - N e u v e - e t - L a b r a d o r A l a s k a N u n

  10. Compositional homogeneity and X-ray topographic analyses of CdTexSe1-x grown by the vertical Bridgman technique

    SciTech Connect (OSTI)

    Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Hossain, A.; Lee, K.; Lee, W.; Tappero, R.; Yang, Ge; Cui, Y.; Burger, A.; James, R. B.

    2015-02-01

    We grew CdTexSe1-x crystals with nominal Se concentrations of 5%, 7%, and 10% by the vertical Bridgman technique, and evaluated their compositional homogeneity and structural quality at the NSLS’ X-ray fluorescence and white beam X-ray topography beam lines. Both X-ray fluorescence and photoluminescence mapping revealed very high compositional homogeneity of the CdTexSe1-x crystals. Here, we noted that those crystals with higher concentrations of Se were more prone to twinning than those with a lower content. The crystals were fairly free from strains and contained low concentrations of sub-grain boundaries and their networks.

  11. Pauli-limited effect in the magnetic phase diagram of FeSe{sub x}Te{sub 1−x} thin films

    SciTech Connect (OSTI)

    Zhuang, J. C.; Li, Z.; Xu, X.; Wang, L.; Yeoh, W. K.; Wang, X. L.; Du, Y. E-mail: zxshi@seu.edu.cn Dou, S. X. E-mail: zxshi@seu.edu.cn; Xing, X. Z.; Shi, Z. X. E-mail: zxshi@seu.edu.cn

    2015-11-30

    We present a detailed investigation on the doping dependence of the upper critical field H{sub c2}(T) of FeSe{sub x}Te{sub 1−x} thin films (0.18 ≤ x ≤ 0.90) by measuring the electrical resistivity as a function of magnetic field. The H{sub c2}(T) curves exhibit a downturn behavior with decreasing temperature in all the samples, owing to the Pauli-limited effect (spin paramagnetic effect). The Pauli-limited effect on the upper critical field can be monotonically modulated by variation of the Se/Te composition. Our results show that Te-doping induced disorder and excess Fe atoms give rise to enhancement of the Pauli-limited effect.

  12. Polytypism, polymorphism, and superconductivity in TaSe2–xTex

    SciTech Connect (OSTI)

    Luo, Huixia; Xie, Weiwei; Tao, Jing; Inoue, Hiroyuki; Gyenis, András; Krizan, Jason W.; Yazdani, Ali; Zhu, Yimei; Cava, Robert Joseph

    2015-03-03

    Polymorphism in materials often leads to significantly different physical properties - the rutile and anatase polymorphs of TiO₂ are a prime example. Polytypism is a special type of polymorphism, occurring in layered materials when the geometry of a repeating structural layer is maintained but the layer stacking sequence of the overall crystal structure can be varied; SiC is an example of a material with many polytypes. Although polymorphs can have radically different physical properties, it is much rarer for polytypism to impact physical properties in a dramatic fashion. Here we study the effects of polytypism and polymorphism on the superconductivity of TaSe₂, one of the archetypal members of the large family of layered dichalcogenides. We show that it is possible to access 2 stable polytypes and 2 stable polymorphs in the TaSe2-xTex solid solution, and find that the 3R polytype shows a superconducting transition temperature that is between 6 and 17 times higher than that of the much more commonly found 2H polytype. Thus, the reason for this dramatic change is not apparent, but we propose that it arises either from a remarkable dependence of Tc on subtle differences in the characteristics of the single layers present, or from a surprising effect of the layer stacking sequence on electronic properties that instead are expected to be dominated by the properties of a single layer in materials of this kind.

  13. High Compositional Homogeneity of CdTexSe1-x Crystals Grown by the Bridgman Method

    SciTech Connect (OSTI)

    Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Hossain, A.; Lee, K.; Lee, W.; Tappero, R.; Yang, G.; Gul, R.; James, R. B.

    2015-02-03

    We obtained high-quality CdTexSe1-x (CdTeSe) crystals from ingots grown by the vertical Bridgman technique. The compositional uniformity of the ingots was evaluated by X-ray fluorescence at BNL’s National Synchrotron Light Source X27A beam line. The resulting compositional homogeneity was highly uniform throughout the ingot, and the effective segregation coefficient of Se was ~1.0. This uniformity offers potential opportunity to enhance the yield of the materials for both infrared substrate and radiation-detector applications, so greatly lowering the cost of production and also offering us the prospect to grow large-diameter ingots for use as large-area substrates and for producing higher efficiency gamma-ray detectors. The concentration of secondary phases was found to be much lower, by eight- to ten fold compared to that of conventional CdxZn1-xTe (CdZnTe or CZT).

  14. Connecting thermoelectric performance and topological-insulator behavior: Bi2Te3 and Bi2Te2Se from first principles

    SciTech Connect (OSTI)

    Shi, Hongliang; Parker, David S.; Du, Mao-Hua; Singh, David J.

    2015-01-20

    Thermoelectric performance is of interest for numerous applications such as waste-heat recovery and solid-state energy conversion and will be seen to be closely connected to topological-insulator behavior. In this paper, we here report first-principles transport and defect calculations for Bi2Te2Se in relation to Bi2Te3. The two compounds are found to contain remarkably different electronic structures in spite of being isostructural and isoelectronic. We also discuss these results in terms of the topological-insulator characteristics of these compounds.

  15. Role of chalcogen vapor annealing in inducing bulk superconductivity in Fe1+yTe1-xSex [How does annealing in chalcogen vapor induce superconductivity in Fe1+yTe-xSex?

    SciTech Connect (OSTI)

    Lin, Wenzhi; Ganesh, P.; Gianfrancesco, Anthony; Berlijn, Tom; Maier, Thomas A.; Kalinin, Sergei V.; Sales, Brian C.; Pan, Minghu

    2015-02-01

    Recent investigations have shown that Fe1+yTe1-xSex can be made superconducting by annealing it in Se and O vapors. The current lore is that these chalcogen vapors induce superconductivity by removing the magnetic excess Fe atoms. To investigate this phenomenon we performed a combination of magnetic susceptibility, specific heat and transport measurements together with scanning tunneling microscopy and spectroscopy and density functional theory calculations on Fe1+yTe1-xSex treated with Te vapor. We conclude that the main role of the Te vapor is to quench the magnetic moments of the excess Fe atoms by forming FeTem (m ≥ 1) complexes. We show that the remaining FeTem complexes are still damaging to the superconductivity and therefore that their removal potentially could further improve superconductive properties in these compounds.

  16. Solar-energy conversion by combined photovoltaic converters with CdTe and CuInSe{sub 2} base layers

    SciTech Connect (OSTI)

    Khrypunov, G. S. Sokol, E. I.; Yakimenko, Yu. I.; Meriuts, A. V.; Ivashuk, A. V.; Shelest, T. N.

    2014-12-15

    The possibility of the combined use of bifacial thin-film solar cells based on CdTe and frontal solar cells with a CuInSe{sub 2} base layer in tandem structures is experimentally confirmed. It is found that, for the use of bifacial solar cells based on cadmium telluride in a tandem structure, the optimal thickness of their base layer should be 1 μm. The gain in the efficiency of the tandem structure, compared with an individual CuInSe{sub 2}-based solar cell, is 1.8% in the case of series-connected solar cells and 1.3%, for parallel-connected.

  17. Comparison of crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te nanocrystalline thin films: Effects of homogeneous irradiation with an electron beam

    SciTech Connect (OSTI)

    Takashiri, Masayuki, E-mail: takashiri@tokai-u.jp; Imai, Kazuo; Uyama, Masato; Nishi, Yoshitake [Department of Materials Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Hagino, Harutoshi; Miyazaki, Koji [Department of Mechanical and Control Engineering, Kyushu Institute of Technology, 1-1 Sensui, Tobata-ku, Kitakyushu 804-8550 (Japan); Tanaka, Saburo [Department of Mechanical Engineering, College of Engineering, Nihon University, Nakagawara, Tokusada, Tamuramachi, Koriyama, Fukushima 963-8642 (Japan)

    2014-06-07

    The effects of homogenous electron beam (EB) irradiation on the crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te thin films were investigated. Both types of thin films were prepared by flash evaporation, after which homogeneous EB irradiation was performed at an acceleration voltage of 0.17?MeV. For the n-type thin films, nanodots with a diameter of less than 10?nm were observed on the surface of rice-like nanostructures, and crystallization and crystal orientation were improved by EB irradiation. The resulting enhancement of mobility led to increased electrical conductivity and thermoelectric power factor for the n-type thin films. In contrast, the crystallization and crystal orientation of the p-type thin films were not influenced by EB irradiation. The carrier concentration increased and mobility decreased with increased EB irradiation dose, possibly because of the generation of defects. As a result, the thermoelectric power factor of p-type thin films was not improved by EB irradiation. The different crystallization behavior of the n-type and p-type thin films is attributed to atomic rearrangement during EB irradiation. Selenium in the n-type thin films is more likely to undergo atomic rearrangement than the other atoms present, so only the crystallinity of the n-type Bi-Se-Te thin films was enhanced.

  18. Electronic structure, transport, and phonons of SrAgChF (Ch = S,Se,Te): Bulk superlattice thermoelectrics

    SciTech Connect (OSTI)

    Gudelli, Vijay Kumar; Kanchana, V.; Vaitheeswaran, G.; Singh, David J.; Svane, Axel; Christensen, Niels Egede; Mahanti, Subhendra D.

    2015-07-15

    Here, we report calculations of the electronic structure, vibrational properties, and transport for the p-type semiconductors, SrAgChF (Ch = S, Se, and Te). We find soft phonons with low frequency optical branches intersecting the acoustic modes below 50 cm–1, indicative of a material with low thermal conductivity. The bands at and near the valence-band maxima are highly two-dimensional, which leads to high thermopowers even at high carrier concentrations, which is a combination that suggests good thermoelectric performance. These materials may be regarded as bulk realizations of superlattice thermoelectrics.

  19. Optimum composition of a Bi{sub 2}Te{sub 3-x}Se{sub x} alloy for the n-type leg of a thermoelectric generator

    SciTech Connect (OSTI)

    Prokofieva, L. V. Pshenay-Severin, D. A.; Konstantinov, P. P.; Shabaldin, A. A.

    2009-08-15

    The reliability of determination of model parameters for the Bi{sub 2}Te{sub 3-x}Se{sub x} alloys is improved by extending the concentration and temperature ranges in experimental studies and, correspondingly, in calculations of kinetic coefficients based on the two-band model of the electronic spectrum. The obtained results served as a motivation for a study of the thermoelectric figure of merit for the above-mentioned alloys with x = 0.3, 0.45, and 0.6 and with the electron concentration varied in the range (1-50) x 10{sup 18} cm{sup -3} at temperatures 300-550 K. Comparison of the results showed that the highest efficiency is exhibited by the Bi{sub 2}Te{sub 2.7}Se{sub 0.3} alloy with the absolute value of the thermoelectric power of about 165 {mu}VK{sup -1} at 300 K, and the dimensionless efficiency is equal to 1.2 at 410 K. An appreciable decrease in thermal conductivity in alloys with x = 0.6 at 410 K is related to a larger band gap and could beneficially affect the figure of merit. However, the magnitude of this effect is found to be too small to compensate a decrease in electrical conductivity due to a large fraction of heavy electrons in the concentration and to a high content of selenium.

  20. Enhancement of transition temperature in Fe{sub x}Se{sub 0.5}Te{sub 0.5} film via iron vacancies

    SciTech Connect (OSTI)

    Zhuang, J. C.; Yeoh, W. K. E-mail: zxshi@seu.edu.cn; Cui, X. Y.; Ringer, S. P.; Kim, J. H.; Shi, D. Q.; Wang, X. L.; Dou, S. X.; Shi, Z. X. E-mail: zxshi@seu.edu.cn

    2014-06-30

    The effects of iron deficiency in Fe{sub x}Se{sub 0.5}Te{sub 0.5} thin films (0.8 ≤ x ≤ 1) on superconductivity and electronic properties have been studied. A significant enhancement of the superconducting transition temperature (T{sub C}) up to 21 K was observed in the most Fe deficient film (x = 0.8). Based on the observed and simulated structural variation results, there is a high possibility that Fe vacancies can be formed in the Fe{sub x}Se{sub 0.5}Te{sub 0.5} films. The enhancement of T{sub C} shows a strong relationship with the lattice strain effect induced by Fe vacancies. Importantly, the presence of Fe vacancies alters the charge carrier population by introducing electron charge carriers, with the Fe deficient film showing more metallic behavior than the defect-free film. Our study provides a means to enhance the superconductivity and tune the charge carriers via Fe vacancy, with no reliance on chemical doping.

  1. Investigation of scanning tunneling spectra on iron-based superconductor FeSe0.5Te0.5(in Chinese)

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Du, Z. -Y.; Fang, D. -L.; Wang, Z. -Y.; Du, G.; Yang, X.; Yang, H.; Gu, G.; -H, Wen H.

    2015-05-05

    FeSe0.5Te0.5 single crystals with superconducting critical temperature of 13.5 K are investigated by scanning tunneling microscopy/spectroscopy (STM/STS) measureflents in detail. STM image on the top surface shows an atomically resolved square lattice consisted by white and dark spots with a constant of about 3.73± 0.03 Å which is consistent with the lattice constant 3.78 Å. The Se and Te atoms with a height difference of about 0.35 Å are successfully identified since the sizes of the two kinds of atoms are different. The tunneling spectra show very large zero-bias conductance value and asymmetric coherent peaks in the superconducting state. Accordingmore » to the positions of coherence peaks, we determine the superconducting gap 2Δ = 5.5 meV, and the reduced gap 2Δ/kBTc = 4.9 is larger than the value predicted by the weak-coupling BCS theory. The zero-bias conductance at 1.7 K only have a decrease of about 40% compared with the normal state conductance, which may originate from some scattering and broadening mechanism in the material. This broadening effect will also make the superconducting gap determined by the distance between the coherence peaks larger than the exact gap value. The asymmetric structure of the tunneling spectra near the superconducting gap is induced by the hump on the background. This hump appears at temperature more than twice the superconducting critical temperature. This kind of hump has also been observed in other iron pnictides and needs further investigation. A possible bosonic mode outside the coherence peak with a mode energy Ω of about 5.5 meV is observed in some tunneling spectra, and the ratio between the mode energy and superconducting transition temperature Ω/kBTc ≈ 4.7 is roughly consistent with the universal ratio 4.3 in iron-based superconductors. The high-energy background of the spectra beyond the superconducting gaps shows a V-shape feature. The slopes of the differential conductance spectra at high energy are

  2. Point defects in CdTexSe1-x crystals grown from a Te-rich solution for applications in detecting radiation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gul, R.; Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Hossain, A.; Lee, W.; Yang, G.; Burger, A.; James, R. B.; et al

    2015-04-15

    We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from (1–30) V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.

  3. Upper critical field and Kondo effects in Fe(Te0.9Se0.1) thin films by pulsed field measurements

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Salamon, Myron B.; Cornell, Nicholas; Jaime, Marcelo; Balakirev, Fedor F.; Zakhidov, Anvar; Huang, Jijie; Wang, Haiyan

    2016-02-10

    The transition temperatures of epitaxial films of Fe(Te0:9Se0:1) are remarkably insensitive to applied magnetic field, leading to predictions of upper critical fields Bc2(T = 0) in excess of 100 T. Using pulsed magnetic fields, we find Bc2(0) to be on the order of 45 T, similar to values in bulk material and still in excess of the paramagnetic limit. The same films show strong magnetoresistance in fields above Bc2(T), consistent with the observed Kondo minimum seen above Tc. Fits to the temperature dependence in the context of the WHH model, using the experimental value of the Maki parameter, require anmore » effective spin-orbit relaxation parameter of order unity. Lastly, we suggest that Kondo localization plays a similar role to spin-orbit pair breaking in making WHH fits to the data.« less

  4. Substitution of Ni for Fe in superconducting Fe?.??Te?.?Se?.? depresses the normal-state conductivity but not the magnetic spectral weight

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Jinghui; Tranquada, J. M.; Zhong, Ruidan; Li, Shichao; Gan, Yuan; Xu, Zhijun; Zhang, Cheng; Ozaki, T.; Matsuda, M.; Zhao, Yang; et al

    2015-01-05

    We have performed systematic resistivity and inelastic neutron scattering measurements on Fe?.???zNizTe?.?Se?.? samples to study the impact of Ni substitution on the transport properties and the low-energy (? 12 meV) magnetic excitations. It is found that, with increasing Ni doping, both the conductivity and superconductivity are gradually suppressed; in contrast, the low-energy magnetic spectral weight changes little. Comparing with the impact of Co and Cu substitution, we find that the effects on conductivity and superconductivity for the same degree of substitution grow systematically as the atomic number of the substituent deviates from that of Fe. The impact of the substituentsmoreas scattering centers appears to be greater than any contribution to carrier concentration. The fact that low-energy magnetic spectral weight is not reduced by increased electron scattering indicates that the existence of antiferromagnetic correlations does not depend on electronic states close to the Fermi energy.less

  5. Ce{sub 2}AgYb{sub 5/3}Se{sub 6}, La{sub 2}CuErTe{sub 5}, and Ce{sub 2}CuTmTe{sub 5}: Three new quaternary interlanthanide chalcogenides

    SciTech Connect (OSTI)

    Babo, Jean-Marie; Albrecht-Schmitt, Thomas E.

    2013-01-15

    Three new ordered quaternary interlanthanide chalcogenides, Ce{sub 2}AgYb{sub 5/3}Se{sub 6}, La{sub 2}CuErTe{sub 5}, and Ce{sub 2}CuTmTe{sub 5}, have been prepared by direct reaction of the elements in molten NaBr at 900 Degree-Sign C. Each compound forms a new structure-type. The Ce{sub 2}AgYb{sub 5/3}Se{sub 6} structure consists of {infinity}{sup 2}{l_brace} [AgYb{sub 5/6}Se{sub 6}]{sup 6-}{r_brace} layers intercalated by Ce{sup 3+} cations. These layers are composed of {infinity}{sup 1}{l_brace} [Yb{sub 5/3}Se{sub 6}]{sup 7-}{r_brace} quadruplet ribbons of [YbSe{sub 6}]{sup 9-} octahedra and infinite {infinity}{sup 1}{l_brace} [AgSe{sub 6}]{sup 11-}{r_brace} double chains of [AgSe{sub 5}]{sup 9-}. The La{sub 2}CuErTe{sub 5} structure is made of one-dimensional {infinity}{sup 1}{l_brace} [CuErTe{sub 5}]{sup 6-}{r_brace} ribbons separated by La{sup 3+} cations. These ribbons are formed by cis-edge sharing {infinity}{sup 1}{l_brace} [CuTe{sub 2}]{sup 3-}{r_brace} tetrahedral chains and trans-edge sharing {infinity}{sup 1}{l_brace} [ErTe{sub 4}]{sup 5-}{r_brace} chains. While La{sub 2}CuErTe{sub 5} crystallizes in the orthorhombic space group Pnma, Ce{sub 2}CuTmTe{sub 5} crystallizes in the monoclinic space group C2/m. The latter crystal structure is assembled from {infinity}{sup 2}{l_brace} [CuTmTe{sub 5}]{sup 6-}{r_brace} layers intercalated by Ce{sup 3+} cations. These layers consist of single {infinity}{sup 1}{l_brace} [TmTe{sub 4}]{sup 5-}{r_brace} chains connected to each other through dimers or pseudo-double chains. - Graphical abstract: [CuTe{sub 4}]{sup 7-} tetrahedra sharing cis-edges to yield chains in the La{sub 2}CuErTe{sub 5}. Highlights: Black-Right-Pointing-Pointer New ordered interlanthanide tellurides. Black-Right-Pointing-Pointer New quaternary chalcogenides. Black-Right-Pointing-Pointer Low-dimensional lanthanide chalcogenide substructures. Black-Right-Pointing-Pointer Flux synthesis of new chalcogenides.

  6. Electronic structure of antifluorite Cu{sub 2}X (X = S, Se, Te) within the modified Becke-Johnson potential plus an on-site Coulomb U

    SciTech Connect (OSTI)

    Zhang, Yubo; Wang, Youwei; Xi, Lili; Qiu, Ruihao; Shi, Xun; Zhang, Peihong E-mail: pzhang3@buffalo.edu; Beijing Computational Science Research Center, Beijing 100084 ; Zhang, Wenqing E-mail: pzhang3@buffalo.edu; School of Chemistry and Chemical Engineering, and Sate Key Laboratory of Coordination Chemistry, Nanjing University, Jiangsu 210093

    2014-02-21

    The traditional photon absorbers Cu{sub 2?x}X (X = S, Se, and Te) have regained significant research attention in the search of earth-abundant photovoltaic materials. These moderate- and narrow-gap materials have also been shown to exhibit excellent thermoelectric properties recently. However, semimetallic band structures with inverted band orderings are predicted for antifluorite structure Cu{sub 2}X using density functional theory with the local density approximation or the generalized gradient approximation. We find that semiconducting band structures and normal band orderings can be obtained using the modified Becke-Johnson potential plus an on-site Coulomb U (the mBJ+U approach), which is consistent with our earlier finding for diamond-like Cu-based multinary semiconductors [Y. Zhang, J. Zhang, W. Gao, T. A. Abtew, Y. Wang, P. Zhang, and W. Zhang, J. Chem. Phys. 139, 184706 (2013)]. The trend of the chemical bonding of Cu{sub 2}X is analyzed, which shows that the positions of the valence band maximum and conduction band minimum are strongly affected by the inter-site pd and intra-site sp hybridizations, respectively. The calculated gaps of Cu{sub 2}S and Cu{sub 2}Se still seem to be underestimated compared with experimental results. We also discuss the effects of different structural phases and Cu disordering and deficiency on the bandgaps of these materials.

  7. Ab initio and relativistic DFT study of spin–rotation and NMR shielding constants in XF{sub 6} molecules, X = S, Se, Te, Mo, and W

    SciTech Connect (OSTI)

    Ruud, Kenneth; Demissie, Taye B.; Institute of Physical Chemistry, Polish Academy of Sciences, 01-224 Warszawa, Kasprzaka 44 ; Jaszuński, Michał

    2014-05-21

    We present an analysis of the spin–rotation and absolute shielding constants of XF{sub 6} molecules (X = S, Se, Te, Mo, W) based on ab initio coupled cluster and four-component relativistic density-functional theory (DFT) calculations. The results show that the relativistic contributions to the spin–rotation and shielding constants are large both for the heavy elements as well as for the fluorine nuclei. In most cases, incorporating the computed relativistic corrections significantly improves the agreement between our results and the well-established experimental values for the isotropic spin–rotation constants and their anisotropic components. This suggests that also for the other molecules, for which accurate and reliable experimental data are not available, reliable values of spin–rotation and absolute shielding constants were determined combining ab initio and relativistic DFT calculations. For the heavy nuclei, the breakdown of the relationship between the spin–rotation constant and the paramagnetic contribution to the shielding constant, due to relativistic effects, causes a significant error in the total absolute shielding constants.

  8. Surface collective modes in the topological insulators Bi2Se3 and Bi0.5Sb1.5Te3-xSex

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kogar, A.; Gu, G.; Vig, S.; Thaler, A.; Wong, M. H.; Xiao, Y.; Reig-i-Plessis, D.; Cho, G. Y.; Valla, T.; Pan, Z.; et al

    2015-12-15

    In this study, we used low-energy, momentum-resolved inelastic electron scattering to study surface collective modes of the three-dimensional topological insulators Bi2Se3 and Bi0.5Sb1.5Te3-xSex. Our goal was to identify the “spin plasmon” predicted by Raghu and co-workers [Phys. Rev. Lett. 104, 116401 (2010)]. Instead, we found that the primary collective mode is a surface plasmon arising from the bulk, free carriers in these materials. This excitation dominates the spectral weight in the bosonic function of the surface χ''(q,ω) at THz energy scales, and is the most likely origin of a quasiparticle dispersion kink observed in previous photoemission experiments. Our study suggestsmore » that the spin plasmon may mix with this other surface mode, calling for a more nuanced understanding of optical experiments in which the spin plasmon is reported to play a role.« less

  9. Phase stabilities of pyrite-related MTCh compounds (M=Ni, Pd, Pt; T=Si, Ge, Sn, Pb; Ch=S, Se, Te): A systematic DFT study

    SciTech Connect (OSTI)

    Bachhuber, Frederik; Krach, Alexander; Furtner, Andrea; Söhnel, Tilo; Peter, Philipp; Rothballer, Jan; Weihrich, Richard

    2015-03-15

    Pyrite-type and related systems appear for a wide range of binary and ternary combinations of transition metals and main group elements that form Zintl type dumbbell anion units. Those representatives with 20 valence electrons exhibit an extraordinary structural flexibility and interesting properties as low-gap semiconductors or thermoelectric and electrode materials. This work is devoted to the systematic exploration of novel compounds within the class of MTCh compounds (M=Ni, Pd, Pt; T=Si, Ge, Sn, Pb; Ch=S, Se, Te) by means of density functional calculations. Their preferred structures are predicted from an extended scheme of colored pyrites and marcasites. To determine their stabilities, competing binary MT{sub 2} and MCh{sub 2} boundary phases are taken into account as well as ternary M{sub 3}T{sub 2}Ch{sub 2} and M{sub 2}T{sub 3}Ch{sub 3} systems. Recently established stability diagrams are presented to account for MTCh ordering phenomena with a focus on a not-yet-reported ordering variant of the NiAs{sub 2} type. Due to the good agreement with experimental data available for several PtTCh systems, the predictions for the residual systems are considered sufficiently accurate. - Graphical abstract: Compositional and structural stability of MTCh compounds is investigated from first principle calculations. A conceptional approach is presented to study and predict novel stable and metastable compounds and structures of low gap semiconductors with TCh dumbbell units that are isoelectronic and structurally related to pyrite (FeS{sub 2}). - Highlights: • Study of compositional stability of MTCh vs. M{sub 3}T{sub 2}Ch{sub 2} and M{sub 2}T{sub 3}Ch{sub 3} compounds. • Study of structural stability of known and novel MTCh compounds. • Prediction of novel stable and metastable structures and compounds isoelectronic to pyrite, FeS{sub 2}.

  10. Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi{sub 2}Te{sub 2}Se

    SciTech Connect (OSTI)

    Kushwaha, S. K. Gibson, Q. D.; Cava, R. J.; Xiong, J.; Ong, N. P.; Pletikosic, I.; Weber, A. P.; Fedorov, A. V.; Valla, T.

    2014-04-14

    A comparative study of the properties of topological insulator Bi{sub 2}Te{sub 2}Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8??10{sup 14}?cm{sup ?3}. Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (E{sub F}) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, which the Dirac point for the surface states lies approximately 60?meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near E{sub F}. Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed.

  11. Observation of an electron band above the Fermi level in FeTe{sub 0.55}Se{sub 0.45} from in-situ surface doping

    SciTech Connect (OSTI)

    Zhang, P.; Ma, J.; Qian, T.; Richard, P. Ding, H.; Xu, N.; Xu, Y.-M.; Fedorov, A. V.; Denlinger, J. D.; Gu, G. D.

    2014-10-27

    We used in-situ potassium (K) evaporation to dope the surface of the iron-based superconductor FeTe{sub 0.55}Se{sub 0.45}. The systematic study of the bands near the Fermi level confirms that electrons are doped into the system, allowing us to tune the Fermi level of this material and to access otherwise unoccupied electronic states. In particular, we observe an electron band located above the Fermi level before doping that shares similarities with a small three-dimensional pocket observed in the cousin, heavily electron-doped KFe{sub 2−x}Se{sub 2} compound.

  12. Structural and conductivity studies of CsK(SO{sub 4}){sub 0.32}(SeO{sub 4}){sub 0.68}Te(OH){sub 6}

    SciTech Connect (OSTI)

    Djemel, M.; Abdelhedi, M.; Dammak, M.; Kolsi, A.W.

    2012-12-15

    The compound CsK(SO{sub 4}){sub 0.32}(SeO{sub 4}){sub 0.68}Te(OH){sub 6} crystallizes in the monoclinic P2{sub 1}/n space group. It was analyzed, at room temperature, using X-ray diffractometer data. The main feature of these atomic arrangements is the coexistence of three and different anions (SO{sub 4}{sup 2-}, SeO{sub 4}{sup 2-} and TeO{sub 6}{sup 6-}groups) in the unit cell, connected by hydrogen bonds which make the building of the crystal. The thermal analysis of the title compound shows three distinct endothermal peaks at 435, 460 and 475 K. Complex impedance measurements are performed on this material as a function of both temperature and frequency. The electric conduction has been studied. The temperature dependence on the conductivity indicates that the sample became an ionic conductor at high temperature. - Graphical abstract: Projection of crystal structure CsK(SO{sub 4}){sub 0.32}(SeO{sub 4}){sub 0.68}Te(OH){sub 6} on the ab plane. Highlights: Black-Right-Pointing-Pointer We have studied the results of the crystal structure of the new mixed compound. Black-Right-Pointing-Pointer We have characterized the phase transition observed in DSC curve. Black-Right-Pointing-Pointer The protonic conduction in our material is probably due to a hopping mechanism.

  13. Determination of lateral size distribution of type-II ZnTe/ZnSe stacked submonolayer quantum dots via spectral analysis of optical signature of the Aharanov-Bohm excitons

    SciTech Connect (OSTI)

    Ji, Haojie; Dhomkar, Siddharth; Roy, Bidisha; Kuskovsky, Igor L.; Shuvayev, Vladimir; Deligiannakis, Vasilios; Tamargo, Maria C.; Ludwig, Jonathan; Smirnov, Dmitry; Wang, Alice

    2014-10-28

    For submonolayer quantum dot (QD) based photonic devices, size and density of QDs are critical parameters, the probing of which requires indirect methods. We report the determination of lateral size distribution of type-II ZnTe/ZnSe stacked submonolayer QDs, based on spectral analysis of the optical signature of Aharanov-Bohm (AB) excitons, complemented by photoluminescence studies, secondary-ion mass spectroscopy, and numerical calculations. Numerical calculations are employed to determine the AB transition magnetic field as a function of the type-II QD radius. The study of four samples grown with different tellurium fluxes shows that the lateral size of QDs increases by just 50%, even though tellurium concentration increases 25-fold. Detailed spectral analysis of the emission of the AB exciton shows that the QD radii take on only certain values due to vertical correlation and the stacked nature of the QDs.

  14. Li2Se as a Neutron Scintillator

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Du, Mao-Hua; Shi, Hongliang; Singh, David J.

    2015-06-23

    We show that Li2Se:Te is a potential neutron scintillator material based on density functional calculations. Li2Se exhibits a number of properties favorable for efficient neutron detection, such as a high Li concentration for neutron absorption, a small effective atomic mass and a low density for reduced sensitivity to background gamma rays, and a small band gap for a high light yield. Our calculations show that Te doping should lead to the formation of deep acceptor complex VLi-TeSe, which can facilitate efficient light emission, similar to the emission activation in Te doped ZnSe.

  15. Surface collective modes in the topological insulators Bi2Se3 and Bi0.5Sb1.5Te3-xSex

    SciTech Connect (OSTI)

    Kogar, A.; Gu, G.; Vig, S.; Thaler, A.; Wong, M. H.; Xiao, Y.; Reig-i-Plessis, D.; Cho, G. Y.; Valla, T.; Pan, Z.; Schneeloch, J.; Zhong, R.; Hughes, T. L.; MacDougall, G. J.; Chiang, T. -C.; Abbamonte, P.

    2015-12-15

    In this study, we used low-energy, momentum-resolved inelastic electron scattering to study surface collective modes of the three-dimensional topological insulators Bi2Se3 and Bi0.5Sb1.5Te3-xSex. Our goal was to identify the “spin plasmon” predicted by Raghu and co-workers [Phys. Rev. Lett. 104, 116401 (2010)]. Instead, we found that the primary collective mode is a surface plasmon arising from the bulk, free carriers in these materials. This excitation dominates the spectral weight in the bosonic function of the surface χ''(q,ω) at THz energy scales, and is the most likely origin of a quasiparticle dispersion kink observed in previous photoemission experiments. Our study suggests that the spin plasmon may mix with this other surface mode, calling for a more nuanced understanding of optical experiments in which the spin plasmon is reported to play a role.

  16. CsBi4Te6: A High-Performance Thermoelectric Material for Low...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    thermoelectric properties of CsBi(4)Te(6) appear to match or exceed those of Bi(2-x)Sb(x)Te(3-y)Se(y) alloys. URL: Link to article - National Center for Biotechnology Information

  17. 125Te NMR chemical-shift trends in PbTeGeTe and PbTeSnTe alloys

    SciTech Connect (OSTI)

    Njegic, Bosiljka; Levin, Evgenii M.; Schmidt-Rohr, Klaus

    2013-10-08

    Complex tellurides, such as doped PbTe, GeTe, and their alloys, are among the best thermoelectric materials. Knowledge of the change in 125Te NMR chemical shift due to bonding to dopant or solute atoms is useful for determination of phase composition, peak assignment, and analysis of local bonding. We have measured the 125Te NMR chemical shifts in PbTe-based alloys, Pb1?xGexTe and Pb1?xSnxTe, which have a rocksalt-like structure, and analyzed their trends. For low x, several peaks are resolved in the 22-kHz MAS 125Te NMR spectra. A simple linear trend in chemical shifts with the number of Pb neighbors is observed. No evidence of a proposed ferroelectric displacement of Ge atoms in a cubic PbTe matrix is detected at low Ge concentrations. The observed chemical shift trends are compared with the results of DFT calculations, which confirm the linear dependence on the composition of the first-neighbor shell. The data enable determination of the composition of various phases in multiphase telluride materials. They also provide estimates of the 125Te chemical shifts of GeTe and SnTe (+970 and +400150 ppm, respectively, from PbTe), which are otherwise difficult to access due to Knight shifts of many hundreds of ppm in neat GeTe and SnTe.

  18. Current enhancement of CdTe-based solar cells

    SciTech Connect (OSTI)

    Paudel, Naba R.; Poplawsky, Jonathan D.; More, Karren Leslie; Yan, Yanfa

    2015-07-30

    We report on the realization of CdTe solar cell photocurrent enhancement using an n-type CdSe heterojunction partner sputtered on commercial SnO2/SnO2:F coated soda-lime glass substrates. With high-temperature close-space sublimation CdTe deposition followed by CdCl2 activation, this thin-film stack allows for substantial interdiffusion at the CdSe/CdTe interface facilitating a CdSexTe1-x alloy formation. The bowing effect causes a reduced optical bandgap of the alloyed absorber layer and, therefore, leads to current enhancement in the long-wavelength region and a decrease in open-circuit voltage (VOC). To overcome the VOC loss and maintain a high short-circuit current (JSC), the CdTe cell configuration has been modified using combined CdS:O/CdSe window layers. The new device structure has demonstrated enhanced collection from both short-and long-wavelength regions as well as a VOC improvement. With an optimized synthesis process, a small-area cell using CdS:O/CdSe window layer showed an efficiency of 15.2% with a VOC of 831 mV, a JSC of 26.3 mA/cm2, and a fill factor of 69.5%, measured under an AM1.5 illumination without antireflection coating. Furthermore, the results provide new directions for further improvement of CdTe-based solar cells.

  19. Neutron capture of /sup 122/Te, /sup 123/Te, /sup 124/Te, /sup 125/Te, and /sup 126/Te

    SciTech Connect (OSTI)

    Macklin, R.L.; Winters, R.R.

    1989-07-01

    Isotopically enriched samples of the tellurium isotopes from mass 122 to mass 126 were used to measure neutron capture in the energy range 2.6 keV to 600 keV at the Oak Ridge Electron Linear Accelerator pulsed neutron source. Starting at 2.6 keV, over 200 Breit-Wigner resonances for each isotope were used to describe the capture data. Least-squares adjustment gave parameters and their uncertainties for a total of 1659 resonances. Capture cross sections averaged over Maxwellian neutron distributions with temperatures ranging from kT = 5 keV to kT = 100 keV were derived for comparison with stellar nucleosynthesis calculations. For the three isotopes shielded from the astrophysical r-process, /sup 122/Te, /sup 123/Te and /sup 124/Te at kT = 30 keV the respective values were (280 /plus minus/ 10) mb, (819 /plus minus/ 30) mb and (154 /plus minus/ 6) mb. The corresponding products of cross section and solar system abundance are nearly equal in close agreement with s-process nucleosynthesis calculations. 26 refs., 8 figs., 10 tabs.

  20. TE Connectivity Finds Answers in Tomography

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    TE Connectivity Finds Answers in Tomography TE Connectivity Finds Answers in Tomography Print Thursday, 22 August 2013 10:50 TE Connectivity is a world leader in connectivity-the...

  1. Potential thermoelectric performance from optimization of hole-doped Bi2Se3

    SciTech Connect (OSTI)

    Parker, David S; Singh, David J

    2011-01-01

    We present an analysis of the potential thermoelectric performance of hole-doped Bi2Se3, which is commonly considered to show inferior room temperature performance when compared to Bi2Te3. We find that if the lattice thermal conductivity can be reduced by nanostructuring techniques (as have been applied to Bi2Te3) the material may show optimized ZT values of unity or more in the 300 - 500 K temperature range and thus be suitable for cooling and moderate temperature waste heat recovery and thermoelectric solar cell applications. Central to this conclusion are the larger band gap and the relatively heavier valence bands of Bi2Se3.

  2. Wide emission-tunable CdTeSe/ZnSe/ZnS core-shell quantum dots...

    Office of Scientific and Technical Information (OSTI)

    OSTI Identifier: 22475756 Resource Type: Journal Article Resource Relation: Journal Name: Materials Research Bulletin; Journal Volume: 65; Other Information: Copyright (c) 2015 ...

  3. About-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    LGRT Conte Buildings The University of Massachusetts Amherst Energy Frontier Research Center (EFRC) - Polymer-Based Materials for Harvesting Solar Energy, PHaSE - was one of 46 ...

  4. Solon SE | Open Energy Information

    Open Energy Info (EERE)

    to: navigation, search Name: Solon SE Place: Berlin, Berlin, Germany Zip: D-12489 Sector: Solar Product: Manufacturer of PV modules and tracking systems, and integrator of solar...

  5. Optical phonons in PbTe/CdTe multilayer heterostructures

    SciTech Connect (OSTI)

    Novikova, N. N.; Yakovlev, V. A.; Kucherenko, I. V.; Karczewski, G.; Aleshchenko, Yu. A.; Muratov, A. V.; Zavaritskaya, T. N.; Melnik, N. N.

    2015-05-15

    The infrared reflection spectra of PbTe/CdTe multilayer nanostructures grown by molecular-beam epitaxy are measured in the frequency range of 20–5000 cm{sup −1} at room temperature. The thicknesses and high-frequency dielectric constants of the PbTe and CdTe layers and the frequencies of the transverse optical (TO) phonons in these structures are determined from dispersion analysis of the spectra. It is found that the samples under study are characterized by two TO phonon frequencies, equal to 28 and 47 cm{sup −1}. The first frequency is close to that of TO phonons in bulk PbTe, and the second is assigned to the optical mode in structurally distorted interface layers. The Raman-scattering spectra upon excitation with the radiation of an Ar{sup +} laser at 514.5 nm are measured at room and liquid-nitrogen temperatures. The weak line at 106 cm{sup −1} observed in these spectra is attributed to longitudinal optical phonons in the interface layers.

  6. CdSe/ZnSe quantum dot with a single Mn{sup 2+} ionA new system for a single spin manipulation

    SciTech Connect (OSTI)

    Smole?ski, T.

    2015-03-21

    We present a magneto-optical study of individual self-assembled CdSe/ZnSe quantum dots doped with single Mn{sup 2+} ions. Properties of the studied dots are analyzed analogously to more explored system of Mn-doped CdTe/ZnTe dots. Characteristic sixfold splitting of the neutral exciton emission line as well as its evolution in the magnetic field are described using a spin Hamiltonian model. Dynamics of both exciton recombination and Mn{sup 2+} spin relaxation are extracted from a series of time-resolved experiments. Presence of a single dopant is shown not to affect the average excitonic lifetime measured for a number of nonmagnetic and Mn-doped dots. On the other hand, non-resonant pumping is demonstrated to depolarize the Mn{sup 2+} spin in a quantum dot placed in external magnetic field. This effect is utilized to determine the ion spin relaxation time in the dark.

  7. TE Connectivity Finds Answers in Tomography

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    TE Connectivity Finds Answers in Tomography TE Connectivity Finds Answers in Tomography Print Thursday, 22 August 2013 10:50 TE Connectivity is a world leader in connectivity-the $13 billion global company designs and manufactures more than 500,000 different electronic connectivity products for the automotive, energy, industrial, broadband communications, consumer device, healthcare, aerospace, and defense industries. TE Connectivity has a long-standing commitment to innovation and engineering

  8. TE Connectivity Finds Answers in Tomography

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    TE Connectivity Finds Answers in Tomography TE Connectivity Finds Answers in Tomography Print Thursday, 22 August 2013 10:50 TE Connectivity is a world leader in connectivity-the $13 billion global company designs and manufactures more than 500,000 different electronic connectivity products for the automotive, energy, industrial, broadband communications, consumer device, healthcare, aerospace, and defense industries. TE Connectivity has a long-standing commitment to innovation and engineering

  9. Structural phase transitions in Bi2Se3 under high pressure

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yu, Zhenhai; Gu, Genda; Wang, Lin; Hu, Qingyang; Zhao, Jinggeng; Yan, Shuai; Yang, Ke; Sinogeikin, Stanislav; Mao, Ho -kwang

    2015-11-02

    Raman spectroscopy and angle dispersive X-ray diffraction (XRD) experiments of bismuth selenide (Bi2Se3) have been carried out to pressures of 35.6 and 81.2 GPa, respectively, to explore its pressure-induced phase transformation. The experiments indicate that a progressive structural evolution occurs from an ambient rhombohedra phase (Space group (SG): R-3m) to monoclinic phase (SG: C2/m) and eventually to a high pressure body-centered tetragonal phase (SG: I4/mmm). Evidenced by our XRD data up to 81.2 GPa, the Bi2Se3 crystallizes into body-centered tetragonal structures rather than the recently reported disordered body-centered cubic (BCC) phase. Furthermore, first principles theoretical calculations favor the viewpoint thatmore » the I4/mmm phase Bi2Se3 can be stabilized under high pressure (>30 GPa). Remarkably, the Raman spectra of Bi2Se3 from this work (two independent runs) are still Raman active up to ~35 GPa. Furthermore, it is worthy to note that the disordered BCC phase at 27.8 GPa is not observed here. The remarkable difference in atomic radii of Bi and Se in Bi2Se3 may explain why Bi2Se3 shows different structural behavior than isocompounds Bi2Te3 and Sb2Te3.« less

  10. Resources-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Resources This webpage is provided for legacy archive purposes only, as of 30 April 2015. However, the facilities and resources created under PHaSE (thanks to the support of the U.S. Department of Energy) remain available for their original purpose of investigating organic-based electronic materials. Resources As a national and regional center of excellence for energy research, PHaSE has access to many resources linked from the Department of Energy and the greater UMass Amherst campus, as well

  11. News-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    News and Highlights Saxony This page shows highlights and news items about PHaSE activities, research achievements, and people; archived items can be accessed by year at the menu to the left. If you have questions about any items, or want to know more, please contact either Tom Russell or D. Venkataraman. Final archive date: 26 April

  12. Materials Data on TeSeO4 (SG:9) by Materials Project

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Kristin Persson

    2014-11-02

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  13. Materials Data on Sb2Te2Se (SG:166) by Materials Project

    SciTech Connect (OSTI)

    Kristin Persson

    2015-02-09

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  14. Recent Advances in the Growth of Bi-Sb-Te-Se Thin Films

    SciTech Connect (OSTI)

    Wang, Guoyu; Endicott, Lynn; Uher, Ctirad

    2011-08-01

    Thin films of Bi₂Te₃, Sb₂Te₃ and Bi₂Se₃ have been intensively studied during the past ten years both as the best thermoelectric materials operating near room temperature and also as an excellent material with which to explore the newly-discovered form of quantum matter called topological insulators (TI). In this review, we first recapitulate the fundamental properties of bulk forms of these materials, then discuss recent progress in fabrication of thin films and superlattices of these narrowgap semiconductors, discuss their transport properties relevant to their effectiveness as thermoelectric materials, and finally give an outlook on this material system for both fundamental study and applications in thermoelectric energy conversion.

  15. Materials Data on Bi2TeSe2 (SG:166) by Materials Project

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Kristin Persson

    2014-11-02

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  16. Barron: Noncompliance Determination (2013-SE-5402) | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Noncompliance Determination (2013-SE-5402) Barron: Noncompliance Determination (2013-SE-5402) December 17, 2015 DOE issued a Notice of Noncompliance Determination to Barron ...

  17. Shandong Hongtai: Noncompliance Determination (2016-SE-42010...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Noncompliance Determination (2016-SE-42010) Shandong Hongtai: Noncompliance Determination (2016-SE-42010) January 6, 2016 DOE issued a Notice of Noncompliance Determination to ...

  18. SE Project Srl | Open Energy Information

    Open Energy Info (EERE)

    search Name: SE Project Srl Place: San Pietro, Italy Zip: 35010 Sector: Solar Product: Italian manufacturer and supplier of solar modules and solar technology. References: SE...

  19. I2SE | Open Energy Information

    Open Energy Info (EERE)

    I2SE Jump to: navigation, search Name: I2SE Place: Leipzig, Germany Zip: 4103 Sector: Efficiency Product: IT company providing solutions for energy efficiency and data...

  20. Graphene/CdTe heterostructure solar cell and its enhancement with photo-induced doping

    SciTech Connect (OSTI)

    Lin, Shisheng Chen, Hongsheng; Li, Xiaoqiang; Zhang, Shengjiao; Wang, Peng; Xu, Zhijuan; Zhong, Huikai; Wu, Zhiqian

    2015-11-09

    We report a type of solar cell based on graphene/CdTe Schottky heterostructure, which can be improved by surface engineering as graphene is atomic thin. By coating a layer of ultrathin CdSe quantum dots onto graphene/CdTe heterostructure, the power conversion efficiency is increased from 2.08% to 3.10%. Photo-induced doping is mainly accounted for this enhancement, as evidenced by field effect transport, Raman, photoluminescence, and quantum efficiency measurements. This work demonstrates a feasible way of improving the performance of graphene/semiconductor heterostructure solar cells by combining one dimensional with two dimensional materials.

  1. Recycling of CdTe photovoltaic waste

    DOE Patents [OSTI]

    Goozner, Robert E.; Long, Mark O.; Drinkard, Jr., William F.

    1999-01-01

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate and electrolyzing the leachate to separate Cd from Te, wherein the Te is deposits onto a cathode while the Cd remains in solution.

  2. High Compositional Homogeneity of CdTexSe1-x Crystals Grown by the Bridgman Method

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Hossain, A.; Lee, K.; Lee, W.; Tappero, R.; Yang, G.; Gul, R.; et al

    2015-02-03

    We obtained high-quality CdTexSe1-x (CdTeSe) crystals from ingots grown by the vertical Bridgman technique. The compositional uniformity of the ingots was evaluated by X-ray fluorescence at BNL’s National Synchrotron Light Source X27A beam line. The resulting compositional homogeneity was highly uniform throughout the ingot, and the effective segregation coefficient of Se was ~1.0. This uniformity offers potential opportunity to enhance the yield of the materials for both infrared substrate and radiation-detector applications, so greatly lowering the cost of production and also offering us the prospect to grow large-diameter ingots for use as large-area substrates and for producing higher efficiency gamma-raymore » detectors. The concentration of secondary phases was found to be much lower, by eight- to ten fold compared to that of conventional CdxZn1-xTe (CdZnTe or CZT).« less

  3. TE Connectivity Finds Answers in Tomography

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    healthcare, aerospace, and defense industries. TE Connectivity has a long-standing commitment to innovation and engineering excellence. Their products help address challenges...

  4. Superconductivity in strong spin orbital coupling compound Sb2Se3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kong, P. P.; Sun, F.; Xing, L. Y.; Zhu, J.; Zhang, S. J.; Li, W. M.; Liu, Q. Q.; Wang, X. C.; Feng, S. M.; Yu, X. H.; et al

    2014-10-20

    Recently, A2B3 type strong spin orbital coupling compounds such as Bi2Te3, Bi2Se3 and Sb2Te3 were theoretically predicated to be topological insulators and demonstrated through experimental efforts. The counterpart compound Sb2Se3 on the other hand was found to be topological trivial, but theoretical studies indicated that the pressure might induce Sb2Se3 into a topological nontrivial state. We report on the discovery of superconductivity in Sb2Se3 single crystal induced via pressure. Our experiments indicated that Sb2Se3 became superconductive at high pressures above 10 GPa proceeded by a pressure induced insulator to metal like transition at ~3 GPa which should be related tomore » the topological quantum transition. The superconducting transition temperature (TC) increased to around 8.0 K with pressure up to 40 GPa while it keeps ambient structure. As a result, high pressure Raman revealed that new modes appeared around 10 GPa and 20 GPa, respectively, which correspond to occurrence of superconductivity and to the change of TC slop as the function of high pressure in conjunction with the evolutions of structural parameters at high pressures.« less

  5. Te

    U.S. Energy Information Administration (EIA) Indexed Site

    ... Refineras Refineries Refinera Raffinerie Asphalt ... Usine de valorisation United States Estados Unidos ... Ltd 71 Marathon Petroleum Co LP 106 Silver Eagle ...

  6. Te

    U.S. Energy Information Administration (EIA) Indexed Site

    4 3 2 1 9 8 7 6 5 4 3 2 1 20 19 18 17 16 15 14 13 12 11 10 10°W 20°W 30°W 40°W 50°W 60°W 70°W 70°W 80°W 80°W 90°W 90°W 100°W 100°W 110°W 110°W 120°W 120°W 130°W 130°W 140°W 140°W 150°W 150°W 160°W 170°W 180° 170°E 160°E 150°E 140°E 70°N 70°N 60°N 60°N 50°N 50°N 40°N 40°N 30°N 30°N 20°N 20°N 10°N 10°N 0 250 500 750 1,000 125 Miles / Millas / Milles 1:12 000 000 Border Crossings of Liquids Pipelines, North America Cruces Fronterizos de Ductos de

  7. Te

    U.S. Energy Information Administration (EIA) Indexed Site

    9 8 7 6 5 4 3 2 1 9 8 7 6 5 4 3 2 1 15 14 13 12 11 10 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 10°W 20°W 30°W 40°W 50°W 60°W 70°W 70°W 80°W 80°W 90°W 90°W 100°W 100°W 110°W 110°W 120°W 120°W 130°W 130°W 140°W 140°W 150°W 150°W 160°W 170°W 180° 170°E 160°E 150°E 140°E 70°N 70°N 60°N 60°N 50°N 50°N 40°N 40°N 30°N 30°N 20°N 20°N 10°N 10°N Border Crossings of Natural Gas Pipelines, North America Cruces Fronterizos de Ductos de Gas Natural,

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    U.S. Energy Information Administration (EIA) Indexed Site

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    U.S. Energy Information Administration (EIA) Indexed Site

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  10. Te

    U.S. Energy Information Administration (EIA) Indexed Site

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    U.S. Energy Information Administration (EIA) Indexed Site

    0&1; &27; , )&30; & " 0&6; &1; &25; &27; &23;&1; &19; + 0, )" & ))" * " + 1 &1; &24; , * &30; )&1; &18; & " 1 &5; O c a n P a c i f i q u e P a c i f i c O c e a n O c a n o P a c f i c o O c a n A t l ...

  12. Te

    U.S. Energy Information Administration (EIA) Indexed Site

    &29; . + (1 2&6; &1; &27; &29; &25;&1; &19; - 2. + (+ + , - 3 &1; &21; . 1(9 . - 3 + &1; &20; + . + &5; O c a n P a c i f i q u e P a c i f i c O c e a n O c a n o P a c f i c o O c a n A t l ...

  13. Te

    U.S. Energy Information Administration (EIA) Indexed Site

    " ' & ( &1; &25; 6 &26; &24; ( & &30; &24; &30; ( 2&3; &1; 2& &30; % ) &26; &1; &25; ) &1; &19; & &25; O c a n P a c i f i q u e P a c i f i c O c e a n O c a n o P a c f i c o O c a n A t l a n t i q u ...

  14. Role of chalcogen vapor annealing in inducing bulk superconductivity in Fe1+yTe1-xSex [How does annealing in chalcogen vapor induce superconductivity in Fe1+yTe-xSex?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lin, Wenzhi; Ganesh, P.; Gianfrancesco, Anthony; Wang, Jun; Berlijn, Tom; Maier, Thomas A.; Kalinin, Sergei V.; Sales, Brian C.; Pan, Minghu

    2015-02-01

    Recent investigations have shown that Fe1+yTe1-xSex can be made superconducting by annealing it in Se and O vapors. The current lore is that these chalcogen vapors induce superconductivity by removing the magnetic excess Fe atoms. To investigate this phenomenon we performed a combination of magnetic susceptibility, specific heat and transport measurements together with scanning tunneling microscopy and spectroscopy and density functional theory calculations on Fe1+yTe1-xSex treated with Te vapor. We conclude that the main role of the Te vapor is to quench the magnetic moments of the excess Fe atoms by forming FeTem (m ≥ 1) complexes. We show thatmore » the remaining FeTem complexes are still damaging to the superconductivity and therefore that their removal potentially could further improve superconductive properties in these compounds.« less

  15. CdTe devices and method of manufacturing same

    SciTech Connect (OSTI)

    Gessert, Timothy A.; Noufi, Rommel; Dhere, Ramesh G.; Albin, David S.; Barnes, Teresa; Burst, James; Duenow, Joel N.; Reese, Matthew

    2015-09-29

    A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

  16. High performance Zintl phase TE materials with embedded nanoparticles...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Zintl phase TE materials with embedded nanoparticles High performance Zintl phase TE materials with embedded nanoparticles Performance of zintl phase thermoelectric ...

  17. Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

    SciTech Connect (OSTI)

    Fedorenko, Y. G. Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K.

    2015-10-28

    By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe.

  18. Recycling of CdTe photovoltaic waste

    DOE Patents [OSTI]

    Goozner, R.E.; Long, M.O.; Drinkard, W.F. Jr.

    1999-04-27

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base. 3 figs.

  19. Recycling of CdTe photovoltaic waste

    DOE Patents [OSTI]

    Goozner, Robert E.; Long, Mark O.; Drinkard, Jr., William F.

    1999-04-27

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base.

  20. Nonlinear terahertz response of HgTe/CdTe quantum wells

    SciTech Connect (OSTI)

    Chen, Qinjun; Sanderson, Matthew; Zhang, Chao

    2015-08-24

    Without breaking the topological order, HgTe/CdTe quantum wells can have two types of bulk band structure: direct gap type (type I) and indirect gap type (type II). We report that the strong nonlinear optical responses exist in both types of bulk states under a moderate electric field in the terahertz regime. Interestingly, for the type II band structure, the third order conductivity changes sign when chemical potentials lies below 10 meV due to the significant response of the hole excitation close to the bottom of conduction band. Negative nonlinear conductivities suggest that HgTe/CdTe quantum wells can find application in the gain medium of a laser for terahertz radiation. The thermal influences on nonlinear optical responses of HgTe/CdTe quantum wells are also studied.

  1. Thermodynamic and Transport Properties of YTe3, LaTe3 and CeTe3

    SciTech Connect (OSTI)

    Ru, N.

    2011-08-19

    Measurements of heat capacity, susceptibility, and electrical resistivity are presented for single crystals of the charge density wave compounds YTe{sub 3}, LaTe{sub 3}, and CeTe{sub 3}. The materials are metallic to low temperatures, but have a small density of states due to the charge density wave gapping large portions of the Fermi surface. CeTe{sub 3} is found to be a weak Kondo lattice, with an antiferromagnetic ground state and T{sub N} = 2.8 K. The electrical resistivity of all three compounds is highly anisotropic, confirming the weak dispersion perpendicular to Te planes predicted by band structure calculations.

  2. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  3. Advanced Precursor Reaction Processing for Cu(InGa)(SeS)2 Solar Cells

    SciTech Connect (OSTI)

    Shafarman, William N.

    2015-10-12

    This project “Advanced Precursor Reaction Processing for Cu(InGa)(SeS)2 Solar Cells”, completed by the Institute of Energy Conversion (IEC) at the University of Delaware in collaboration with the Department of Chemical Engineering at the University of Florida, developed the fundamental understanding and technology to increase module efficiency and improve the manufacturability of Cu(InGa)(SeS)2 films using the precursor reaction approach currently being developed by a number of companies. Key results included: (1) development of a three-step H2Se/Ar/H2S reaction process to control Ga distribution through the film and minimizes back contact MoSe2 formation; (2) Ag-alloying to improve precursor homogeneity by avoiding In phase agglomeration, faster reaction and improved adhesion to allow wider reaction process window; (3) addition of Sb, Bi, and Te interlayers at the Mo/precursor junction to produce more uniform precursor morphology and improve adhesion with reduced void formation in reacted films; (4) a precursor structure containing Se and a reaction process to reduce processing time to 5 minutes and eliminate H2Se usage, thereby increasing throughput and reducing costs. All these results were supported by detailed characterization of the film growth, reaction pathways, thermodynamic assessment and device behavior.

  4. Oxidation of ultrathin GaSe

    SciTech Connect (OSTI)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  5. Q Cells SE | Open Energy Information

    Open Energy Info (EERE)

    Name: Q-Cells SE Place: Thalheim, Brandenburg, Germany Zip: 6766 Product: German PV cell manufacturer; also makes strategic venture capital and corporate investments....

  6. Oxidation of ultrathin GaSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  7. Templates-Resources-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    templates 36 inch high by 48 inch wide, landscape poster template with PHaSE acknowledgements (PPT file download) 36 inch high by 48 inch wide, landscape poster template with PHaSE acknowledgements, 12-panel layout (typical pattern used by UMass PSE) (PPT file download) 42 inch high by 48 inch wide, landscape poster template with PHaSE acknowledgements (PPT file download) 36 inch high by 48 inch wide, portrait poster template with PHaSE acknowledgements (PPT file download) 16:9 Slide Templates

  8. From thermoelectric bulk to nanomaterials: Current progress for Bi 2 Te 3 and CoSb 3: From thermoelectric bulk to nanomaterials

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Peranio, N.; Eibl, O.; Bäßler, S.; Nielsch, K.; Klobes, B.; Hermann, R. P.; Daniel, M.; Albrecht, M.; Görlitz, H.; Pacheco, V.; et al

    2015-10-29

    We synthesized Bi2Te3 and CoSb3 based nanomaterials and their thermoelectric, structural, and vibrational properties analyzed to assess and reduce ZT-limiting mechanisms. The same preparation and/or characterization methods were applied in the different materials systems. Single-crystalline, ternary p-type Bi15Sb29Te56, and n-type Bi38Te55Se7 nanowires with power factors comparable to nanostructured bulkmaterialswere prepared by potential-pulsed electrochemical deposition in a nanostructured Al2O3 matrix. p-type Sb2Te3, n-type Bi2Te3, and n-type CoSb3 thin films were grown at room temperature using molecular beam epitaxy and were subsequently annealed at elevated temperatures. It yielded polycrystalline, single phase thin films with optimized charge carrier densities. In CoSb3 thin filmsmore » the speed of sound could be reduced by filling the cage structure with Yb and alloying with Fe yielded p-type material. Bi2(Te0.91Se0.09)3/SiC and (Bi0.26Sb0.74)2Te3/SiC nanocomposites with low thermal conductivities and ZT values larger than 1 were prepared by spark plasma sintering. Nanostructure, texture, chemical composition, as well as electronic and phononic excitations were investigated by X-ray diffraction, nuclear resonance scattering, inelastic neutron scattering, M ossbauer spectroscopy, and transmission electron microscopy. Furthermore, for Bi2Te3 materials, ab-initio calculations together with equilibrium and non-equilibrium molecular dynamics simulations for point defects yielded their formation energies and their effect on lattice thermal conductivity, respectively. Current advances in thermoelectric Bi2Te3 and CoSb3 based nanomaterials are summarized. Advanced synthesis and characterization methods and theoreticalmodelingwere combined to assess and reduce ZT-limiting mechanisms in these materials.« less

  9. Efficiency, Cost and Weight Trade-off in TE Power Generation...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    TE Materials with Embedded Particles High performance Zintl phase TE materials with embedded nanoparticles High performance Zintl phase TE materials with embedded nanoparticles

  10. Superconductivity in strong spin orbital coupling compound Sb2Se3

    SciTech Connect (OSTI)

    Kong, P. P.; Sun, F.; Xing, L. Y.; Zhu, J.; Zhang, S. J.; Li, W. M.; Liu, Q. Q.; Wang, X. C.; Feng, S. M.; Yu, X. H.; Zhu, J. L.; Yu, R. C.; Yang, W. G.; Shen, G. Y.; Zhao, Y. S.; Ahuja, R.; Mao, H. K.; Jin, C. Q.

    2014-10-20

    Recently, A2B3 type strong spin orbital coupling compounds such as Bi2Te3, Bi2Se3 and Sb2Te3 were theoretically predicated to be topological insulators and demonstrated through experimental efforts. The counterpart compound Sb2Se3 on the other hand was found to be topological trivial, but theoretical studies indicated that the pressure might induce Sb2Se3 into a topological nontrivial state. We report on the discovery of superconductivity in Sb2Se3 single crystal induced via pressure. Our experiments indicated that Sb2Se3 became superconductive at high pressures above 10 GPa proceeded by a pressure induced insulator to metal like transition at ~3 GPa which should be related to the topological quantum transition. The superconducting transition temperature (TC) increased to around 8.0 K with pressure up to 40 GPa while it keeps ambient structure. As a result, high pressure Raman revealed that new modes appeared around 10 GPa and 20 GPa, respectively, which correspond to occurrence of superconductivity and to the change of TC slop as the function of high pressure in conjunction with the evolutions of structural parameters at high pressures.

  11. Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Zhao, Xin-Hao; Campbell, Calli M.; DiNezza, Michael J.; Liu, Shi; Zhao, Yuan; Zhang, Yong-Hang

    2014-12-22

    The bulk Shockley-Read-Hall carrier lifetime of CdTe and interface recombination velocity at the CdTe/Mg{sub 0.24}Cd{sub 0.76}Te heterointerface are estimated to be around 0.5??s and (4.7??0.4)??10{sup 2?}cm/s, respectively, using time-resolved photoluminescence (PL) measurements. Four CdTe/MgCdTe double heterostructures (DHs) with varying CdTe layer thicknesses were grown on nearly lattice-matched InSb (001) substrates using molecular beam epitaxy. The longest lifetime of 179?ns is observed in the DH with a 2??m thick CdTe layer. It is also shown that the photon recycling effect has a strong influence on the bulk radiative lifetime, and the reabsorption process affects the measured PL spectrum shape and intensity.

  12. Facilities-Resources-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Various PHaSE EFRC equipment may be accessed by making arrangments for training and acceptance to the list of registered users. Access to the facility rooms requires a password ...

  13. SE Drive Technik | Open Energy Information

    Open Energy Info (EERE)

    Drive Technik Jump to: navigation, search Name: SE Drive Technik Place: Bochum, Germany Zip: 44791 Product: Germany-based R&D subsidiary of Indian turbine maker Suzlon. References:...

  14. 2013 Archives-News-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3 Archives Volodimyr Duzhko photo Volodimyr Duzhko promoted to (extension) Assistant Professor of Polymer Science & Engineering. PHaSE is pleased to announce that Facility Director Dr. Volodimyr Duzhko has been promoted to extension Assistant Professor of Polymer Science & Engineering. Volodimyr is a semiconductor physicist with considerable experience in polymer materials. Since joining PHaSE, he has trained over 70 people to use 10 instruments in the Photovoltaic & Optical

  15. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals...

    Office of Scientific and Technical Information (OSTI)

    Nuclear Radiation Detectors Citation Details In-Document Search Title: Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear ...

  16. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals...

    Office of Scientific and Technical Information (OSTI)

    temperature gradient, we observed the migration of Te inclusions from a low-temperature ... These results show that the migration, diffusion, and reaction of Te with Cd in the matrix ...

  17. A transferable force field for CdS-CdSe-PbS-PbSe solid systems

    SciTech Connect (OSTI)

    Fan, Zhaochuan; Vlugt, Thijs J. H.; Koster, Rik S.; Fang, Changming; Huis, Marijn A. van; Wang, Shuaiwei; Yalcin, Anil O.; Tichelaar, Frans D.; Zandbergen, Henny W.

    2014-12-28

    A transferable force field for the PbSe-CdSe solid system using the partially charged rigid ion model has been successfully developed and was used to study the cation exchange in PbSe-CdSe heteronanocrystals [A. O. Yalcin et al., “Atomic resolution monitoring of cation exchange in CdSe-PbSe heteronanocrystals during epitaxial solid-solid-vapor growth,” Nano Lett. 14, 3661–3667 (2014)]. In this work, we extend this force field by including another two important binary semiconductors, PbS and CdS, and provide detailed information on the validation of this force field. The parameterization combines Bader charge analysis, empirical fitting, and ab initio energy surface fitting. When compared with experimental data and density functional theory calculations, it is shown that a wide range of physical properties of bulk PbS, PbSe, CdS, CdSe, and their mixed phases can be accurately reproduced using this force field. The choice of functional forms and parameterization strategy is demonstrated to be rational and effective. This transferable force field can be used in various studies on II-VI and IV-VI semiconductor materials consisting of CdS, CdSe, PbS, and PbSe. Here, we demonstrate the applicability of the force field model by molecular dynamics simulations whereby transformations are initiated by cation exchange.

  18. Structural phase transitions in Bi2Se3 under high pressure

    SciTech Connect (OSTI)

    Yu, Zhenhai; Gu, Genda; Wang, Lin; Hu, Qingyang; Zhao, Jinggeng; Yan, Shuai; Yang, Ke; Sinogeikin, Stanislav; Mao, Ho -kwang

    2015-11-02

    Raman spectroscopy and angle dispersive X-ray diffraction (XRD) experiments of bismuth selenide (Bi2Se3) have been carried out to pressures of 35.6 and 81.2 GPa, respectively, to explore its pressure-induced phase transformation. The experiments indicate that a progressive structural evolution occurs from an ambient rhombohedra phase (Space group (SG): R-3m) to monoclinic phase (SG: C2/m) and eventually to a high pressure body-centered tetragonal phase (SG: I4/mmm). Evidenced by our XRD data up to 81.2 GPa, the Bi2Se3 crystallizes into body-centered tetragonal structures rather than the recently reported disordered body-centered cubic (BCC) phase. Furthermore, first principles theoretical calculations favor the viewpoint that the I4/mmm phase Bi2Se3 can be stabilized under high pressure (>30 GPa). Remarkably, the Raman spectra of Bi2Se3 from this work (two independent runs) are still Raman active up to ~35 GPa. Furthermore, it is worthy to note that the disordered BCC phase at 27.8 GPa is not observed here. The remarkable difference in atomic radii of Bi and Se in Bi2Se3 may explain why Bi2Se3 shows different structural behavior than isocompounds Bi2Te3 and Sb2Te3.

  19. Benefits of Carrier Pocket Anisotropy to Thermoelectric Performance: The case of p-type AgBiSe2

    SciTech Connect (OSTI)

    Parker, David S; May, Andrew F; Singh, David J

    2015-01-01

    We study theoretically the effects of anisotropy on the thermoelectric performance of p-type AgBiSe2. We present an apparent realization of the thermoelectric benefits of one-dimensional plate-like carrier pocket anisotropy in the valence band of this material. Based on first principles calculations we find a substantial anisotropy in the electronic structure, likely favorable for thermoelectric performance, in the valence bands of the hexagonal phase of the silver chalcogenide thermoelectric AgBiSe2, while the conduction bands are more isotropic, and in our experiments do not attain high performance. AgBiSe2 has already exhibited a ZT value of 1.5 in a high-temperature disordered fcc phase, but room-temperature performance has not been demonstrated. We develop a theory for the ability of anisotropy to decouple the density-of-states and conductivity effective masses, pointing out the influence of this effect in the high performance thermoelectrics Bi2Te3 and PbTe. From our first principles and Boltzmann transport calculations we find that p-type AgBiSe2 has substantial promise as a room temperature thermoelectric, and estimate its performance.

  20. Benefits of Carrier-Pocket Anisotropy to Thermoelectric Performance: The Case of p -Type AgBiSe2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Parker, David S.; May, Andrew F.; Singh, David J.

    2015-06-05

    Here we study theoretically the effects of anisotropy on the thermoelectric performance of p-type AgBiSe2. We present an apparent realization of the thermoelectric benefits of one-dimensional plate-like carrier pocket anisotropy in the valence band of this material. Based on first principles calculations we find a substantial anisotropy in the electronic structure, likely favorable for thermoelectric performance, in the valence bands of the hexagonal phase of the silver chalcogenide thermoelectric AgBiSe2, while the conduction bands are more isotropic, and in our experiments do not attain high performance. AgBiSe2 has already exhibited a ZT value of 1.5 in a high-temperature disordered fccmore » phase, but room-temperature performance has not been demonstrated. We develop a theory for the ability of anisotropy to decouple the density-of-states and conductivity effective masses, pointing out the influence of this effect in the high performance thermoelectrics Bi2Te3 and PbTe. From our first principles and Boltzmann transport calculations we find that p-type AgBiSe2 has substantial promise as a room temperature thermoelectric, and estimate its performance.« less

  1. Nanoscale structure in AgSbTe2 determined by diffuse elastic neutron scattering

    SciTech Connect (OSTI)

    Specht, Eliot D [ORNL; Ma, Jie [ORNL; Delaire, Olivier A [ORNL; Budai, John D [ORNL; May, Andrew F [ORNL; Karapetrova, Evguenia A. [Argonne National Laboratory (ANL)

    2015-01-01

    Diffuse elastic neutron scattering measurements confirm that AgSbTe2 has a hierarchical structure, with defects on length scales from nanometers to microns. While scattering from mesoscale structure is consistent with previously-proposed structures in which Ag and Sb order on a NaCl lattice, more diffuse scattering from nanoscale structure suggests a structural rearrangement in which hexagonal layers form a combination of (ABC), (ABA), and (AAB) stacking sequences. The AgCrSe2 structure is the best-fitting model for the local atomic arrangements.

  2. Effect and optimization of CdS/CdTe interdiffusion on CdTe electrical properties and CdS/CdTe cell performance

    SciTech Connect (OSTI)

    Song, W.; Mao, D.; Kaydanov, V.; Ohno, T.R.; Trefny, J.V.; Levi, D.H.; Johnston, S. McCandless, B.E.

    1999-03-01

    We have investigated the effect of the CdS/CdTe interdiffusion on the properties of the CdTe films and the CdS/CdTe cell performance. Sulfur (S) diffusion into the CdTe films leads to a decreased defect density in the films, improvement of cell performance, and possibly to the increase of the carrier lifetime in the films. Cell performance is improved with the increase of the amount of S in the CdTe films. S diffusion into CdTe also deteriorates the uniformity of the CdS window layers, resulting in worse cell performance. Based on this study, we propose a processing method to improve cell performance. {copyright} {ital 1999 American Institute of Physics.}

  3. 2011 Archives-News-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1 Archives solar cells video clip Solar Cells from Plastics? Mission Possible at the PHaSE energy research center, UMass Amherst!, a YouTube video about work at PHaSE, debuted on 24 March 2011. This video is part of our center's contributions to the Energy Frontier Research Centers Summit & Forum on 25-27 May 2011, which is further described below. Many thanks to Harihara Venkatraman (DV group, ERG 1) and Dr. Emily Pentzer (Emrick group, ERG 1) for starring in the video clip, along with

  4. Upper Critical Field and Kondo Effects in Fe(Te0.9Se0.1) Thin...

    Office of Scientific and Technical Information (OSTI)

    ... | 6:21469 | DOI: 10.1038srep21469 1 www.nature.comscientificreports Figure 1. Pulsed ... | 6:21469 | DOI: 10.1038srep21469 2 www.nature.comscientificreports Temperature (K) ...

  5. New chalcogenide glasses in the CdTe-AgI-As{sub 2}Te{sub 3} system

    SciTech Connect (OSTI)

    Kassem, M.; Le Coq, D.; Boidin, R.; Bychkov, E.; ULCO, LPCA, EA 4493, F-59140 Dunkerque

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Determination of the glass-forming region in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system. Black-Right-Pointing-Pointer Characterization of macroscopic properties of the new CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Characterization of the total conductivity of CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Comparison between the selenide and telluride equivalent systems. -- Abstract: Chalcogenide glasses in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system were synthesized and the glass-forming range was determined. The maximum content of CdTe in this glass system was found to be equal to 15 mol.%. The macroscopic characterizations of samples have consisted in Differential Scanning Calorimetry, density, and X-ray diffraction measurements. The cadmium telluride addition does not generate any significant change in the glass transition temperature but the resistance of binary AgI-As{sub 2}Te{sub 3} glasses towards crystallisation is estimated to be decreasing on the base of {Delta}T = T{sub x} - T{sub g} parameter. The total electrical conductivity {sigma} was measured by complex impedance spectroscopy. First, the CdTe additions in the (AgI){sub 0.5}(As{sub 2}Te{sub 3}){sub 0.5} host glass, (CdTe){sub x}(AgI){sub 0.5-x/2}(As{sub 2}Te{sub 3}){sub 0.5-x/2} lead to a conductivity decrease at x {<=} 0.05. Then, the behaviour is reversed at 0.05 {<=} x {<=} 0.15. The obtained results are discussed by comparison with the equivalent selenide system.

  6. Anisotropy in CdSe quantum rods

    SciTech Connect (OSTI)

    Li, Liang-shi

    2003-09-01

    The size-dependent optical and electronic properties of semiconductor nanocrystals have drawn much attention in the past decade, and have been very well understood for spherical ones. The advent of the synthetic methods to make rod-like CdSe nanocrystals with wurtzite structure has offered us a new opportunity to study their properties as functions of their shape. This dissertation includes three main parts: synthesis of CdSe nanorods with tightly controlled widths and lengths, their optical and dielectric properties, and their large-scale assembly, all of which are either directly or indirectly caused by the uniaxial crystallographic structure of wurtzite CdSe. The hexagonal wurtzite structure is believed to be the primary reason for the growth of CdSe nanorods. It represents itself in the kinetic stabilization of the rod-like particles over the spherical ones in the presence of phosphonic acids. By varying the composition of the surfactant mixture used for synthesis we have achieved tight control of the widths and lengths of the nanorods. The synthesis of monodisperse CdSe nanorods enables us to systematically study their size-dependent properties. For example, room temperature single particle fluorescence spectroscopy has shown that nanorods emit linearly polarized photoluminescence. Theoretical calculations have shown that it is due to the crossing between the two highest occupied electronic levels with increasing aspect ratio. We also measured the permanent electric dipole moment of the nanorods with transient electric birefringence technique. Experimental results on nanorods with different sizes show that the dipole moment is linear to the particle volume, indicating that it originates from the non-centrosymmetric hexagonal lattice. The elongation of the nanocrystals also results in the anisotropic inter-particle interaction. One of the consequences is the formation of liquid crystalline phases when the nanorods are dispersed in solvent to a high enough

  7. Organization-About-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    About Mission Statement (PDF) Organization Contact Us organization This webpage is provided for legacy archive purposes only, as of 30 April 2015. The day to day operations of the University of Massachusetts Amherst PHaSE EFRC are administered by co-directors. Russell is the Samuel Conte Distingushed Professor of Polymer Science and Engineering, with years of previous experience at IBM Research, over 620 publications and 21 patents for polymer chemistry and physics. Lahti has over 29 years at

  8. SE Great Basin Play Fairway Analysis

    SciTech Connect (OSTI)

    Adam Brandt

    2015-11-15

    This submission includes a Na/K geothermometer probability greater than 200 deg C map, as well as two play fairway analysis (PFA) models. The probability map acts as a composite risk segment for the PFA models. The PFA models differ in their application of magnetotelluric conductors as composite risk segments. These PFA models map out the geothermal potential in the region of SE Great Basin, Utah.

  9. UMass-Resources-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    UMass Resources UMass logo The following links provide information about important local (UMass Amherst) campus and departmental offices and resources, including major interdepartmental research centers that pursue work closely akin to research that was initiated or expanded under PHaSE. The last four links go to sites with energy or research news of potential interest to scientists interested in organic electronic materails. Major UMass User Facilities Vice-Chancellor for Research UMass

  10. 2010 Archives-News-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    0 Archives PHaSE welcomes Dr. Lawrence Friedman as our new Managing Director. Larry comes to us with strong backgrounds in both academic and industrial experience. He is well acquainted with UMass Amherst from his time at Bayer Materials Science, where he was much involved in doctoral level recruiting and in academic/industrial liaison work as Head of University Relations. Before this, he was at Polaroid doing work in flims research as a manager and senior scientist. His academic credentials

  11. 2013 Archives-News-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4 Archives PHaSE EFRC work was featured in an MRS-TV video production, UMASS Amherst -- Optimal Design: Interdisciplinary Teamwork from Synthesis to Production, that was highlighted on electronic signage throughout the Fall 2014 Boston Materials Research Society meeting. Major vignettes were shown from Maroudas group, DV group, Emrick group. Both faculty and undergraduates/graduates/postdocs described EFRC work and work being carried out by closely allied groups interested in energy-related

  12. Surveying The TeV Sky With Milagro

    SciTech Connect (OSTI)

    Walker, G. P.

    2006-11-17

    A wide field of view, high duty factor TeV gamma-ray observatory is essential for studying TeV astrophysical sources, because most of these sources are either highly variable or are extended. Milagro is such a TeV detector and has performed the deepest survey of the Northern Hemisphere sky. In addition to detecting the Crab Nebula and Mrk 421, which are known TeV sources, Milagro has made the first detection of diffuse TeV emission from the Galactic plane. The Milagro data has been searched for unknown point sources and extended sources. A new extended TeV source is seen and is coincident with an EGRET unidentified source. Based on the success of Milagro, a second generation water Cherenkov gamma-ray observatory is planned which will give an increase in sensitivity of more than an order of magnitude.

  13. SeQuential Pacific Biodiesel LLC | Open Energy Information

    Open Energy Info (EERE)

    Pacific Biodiesel LLC Jump to: navigation, search Name: SeQuential-Pacific Biodiesel LLC Place: Oregon Sector: Biofuels Product: JV between SeQuential Biofuels, Pacific Biodiesel,...

  14. AeroSys: Noncompliance Determination (2010-SE-0302) | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Noncompliance Determination (2010-SE-0302) AeroSys: Noncompliance Determination (2010-SE-0302) April 13, 2010 DOE issued a Notice of Noncompliance Determination to AeroSys, Inc. ...

  15. Astrophysics and Cosmology with TeV Gamma Rays

    SciTech Connect (OSTI)

    Aharonian, Felix

    2005-07-13

    I will discuss the astrophysical and cosmological implications of recent exciting discoveries of TeV gamma-rays from objects representing several Galactic and Extragalactic source populations.

  16. Luminosity goals for a 100-TeV pp collider

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hinchliffe, Ian; Kotwal, Ashutosh; Mangano, Michelangelo L.; Quigg, Chris; Wang, Lian-Tao

    2015-08-20

    We consider diverse examples of science goals that provide a framework to assess luminosity goals for a future 100-TeV proton-proton collider.

  17. High Performance Zintl Phase TE Materials with Embedded Particles...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Presents results from embedding nanoparticles in magnesium silicide alloy matrix ... Zintl Phase Materials with Embedded Nanoparticles High performance Zintl phase TE ...

  18. Luminosity goals for a 100-TeV pp collider

    SciTech Connect (OSTI)

    Hinchliffe, Ian; Kotwal, Ashutosh; Mangano, Michelangelo L.; Quigg, Chris; Wang, Lian-Tao

    2015-04-23

    We consider diverse examples of science goals that provide a framework to assess luminosity goals for a future 100-TeV proton-proton collider.

  19. Battle Mountain Band - Te-Moak: Solar Energy Park

    Energy Savers [EERE]

    Battle Mountain Band - Te-Moak Chairman Joseph Holley and Vice-chairman Mark Oppenhein, Members Donna Hill, Delbert Holley, Lydia Johnson, and Lydell Oppenhein Solar Energy Park ...

  20. 2009 Archives-News-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    09 Archives U.S. DOE Announces Energy Frontier Research Centers (08/2009) UMass Amherst EFRC Proposal (08/2009) EFRC Funding Distributed to Successful Centers (08/2009) PHaSE co-director Paul Lahti led off a set of presentations organized by the UMass Amherst Research & Liaison office to meet with a delegation of scientists from various technical research centers of the Gipuzkoa province in the Basque region of northern Spain. The delegation was organized through the Tecnalia Corporation,

  1. 2012 Archives-News-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2 Archives Tom Russell photo Joint work by Tom Russell, Alex Briseno, and coworkers describes fabrication and a significant degree of device optimization of a low band polymer pDPP/PCBM solar cell, in an article published in Advanced Materials. Photoconversion efficiency up to 5.6% with a fill factor of 60% were obtained. Morphology control based on solvent mixture tuning was critically important for best electrical output. [read more] PHaSE members D. Venkataraman and Tom Russell have edited a

  2. Pressure dependence of the charge-density-wave and superconducting states in GdTe3, TbTe3, and DyTe3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zocco, D. A.; Hamlin, J. J.; Grube, K.; Chu, J. -H.; Kuo, H. -H.; Fisher, I. R.; Maple, M. B.

    2015-05-14

    Here, we present electrical resistivity and ac-susceptibility measurements of GdTe3, TbTe3 and DyTe3 performed under pressure. An upper charge-density-wave (CDW) is suppressed at a rate of dTCW,1/dP~ –85K/GPa. For TbTe3 and DyTe3, a second CDW below TCDW,2 increases with pressure until it reaches the TCDW,1(P) line. For GdTe3, the lower CDW emerges as pressure is increased above ~1GPa. As these two CDW states are suppressed with pressure, superconductivity (SC) appears in the three compounds at lower temperatures. Ac-susceptibility experiments performed on TbTe3 provide compelling evidence for bulk SC in the low-pressure region of the phase diagram. We provide measurements ofmore » superconducting critical fields and discuss the origin of a high-pressure superconducting phase occurring above 5 GPa.« less

  3. Copper migration in CdTe heterojunction solar cells

    SciTech Connect (OSTI)

    Chou, H.C.; Rohatgi, A.; Jokerst, N.M.; Thomas, E.W.; Kamra, S.

    1996-07-01

    CdTe solar cells were fabricated by depositing a Au/Cu contact with Cu thickness in the range of 50 to 150A on polycrystalline CdTe/CdS/SnO{sub 2} glass structures. The increase in Cu thickness improves ohmic contact and reduces series resistance (R{sub s}), but the excess Cu tends to diffuse into CdTe and lower shunt resistance (R{sub sh}) and cell performance. Light I-V and secondary ion mass spectroscopy (SIMS) measurements were performed to understand the correlations between the Cu contact thickness, the extent of Cu incorporation in the CdTe cells, and its impact on the cell performance. The CdTe/CdS/SnO{sub 2} glass, CdTe/CdS/GaAs, and CdTe/GaAs structures were prepared in an attempt to achieve CdTe films with different degrees of crystallinity and grain size. A large grain polycrystalline CdTe thin film solar cell was obtained for the first time by selective etching the GaAs substrate coupled with the film transfer onto a glass substrate. SIMS measurement showed that poor crystallinity and smaller grain size of the CdTe film promotes Cu diffusion and decreases the cell performance. Therefore, grain boundaries are the main conduits for Cu migration and larger CdTe grain size or alternate method of contact formation can mitigate the adverse effect of Cu and improve the cell performance. 15 refs., 1 fig.,6 tabs.

  4. Synthesis and optical study of green light emitting polymer coated CdSe/ZnSe core/shell nanocrystals

    SciTech Connect (OSTI)

    Tripathi, S.K.; Sharma, Mamta

    2013-05-15

    Highlights: ► Synthesis of Polymer coated core CdSe and CdSe/ZnSe core/shell NCs. ► From TEM image, the spherical nature of CdSe and CdSe/ZnSe is obtained. ► Exhibiting green band photoemission peak at 541 nm and 549 nm for CdSe core and CdSe/ZnSe core/shell NCs. ► The shell thickness has been calculated by using superposition of quantum confinement energy model. - Abstract: CdSe/ZnSe Core/Shell NCs dispersed in PVA are synthesized by chemical method at room temperature. This is characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV/Vis spectra and photoluminescence spectroscopy (PL). TEM image shows the spherical nature of CdSe/ZnSe core/shell NCs. The red shift of absorption and emission peak of CdSe/ZnSe core/shell NCs as compared to CdSe core confirmed the formation of core/shell. The superposition of quantum confinement energy model is used for calculation of thickness of ZnSe shell.

  5. From thermoelectric bulk to nanomaterials: Current progress for Bi 2 Te 3 and CoSb 3: From thermoelectric bulk to nanomaterials

    SciTech Connect (OSTI)

    Peranio, N.; Eibl, O.; Bäßler, S.; Nielsch, K.; Klobes, B.; Hermann, R. P.; Daniel, M.; Albrecht, M.; Görlitz, H.; Pacheco, V.; Bedoya-Martínez, N.; Hashibon, A.; Elsässer, C.

    2015-10-29

    We synthesized Bi2Te3 and CoSb3 based nanomaterials and their thermoelectric, structural, and vibrational properties analyzed to assess and reduce ZT-limiting mechanisms. The same preparation and/or characterization methods were applied in the different materials systems. Single-crystalline, ternary p-type Bi15Sb29Te56, and n-type Bi38Te55Se7 nanowires with power factors comparable to nanostructured bulkmaterialswere prepared by potential-pulsed electrochemical deposition in a nanostructured Al2O3 matrix. p-type Sb2Te3, n-type Bi2Te3, and n-type CoSb3 thin films were grown at room temperature using molecular beam epitaxy and were subsequently annealed at elevated temperatures. It yielded polycrystalline, single phase thin films with optimized charge carrier densities. In CoSb3 thin films the speed of sound could be reduced by filling the cage structure with Yb and alloying with Fe yielded p-type material. Bi2(Te0.91Se0.09)3/SiC and (Bi0.26Sb0.74)2Te3/SiC nanocomposites with low thermal conductivities and ZT values larger than 1 were prepared by spark plasma sintering. Nanostructure, texture, chemical composition, as well as electronic and phononic excitations were investigated by X-ray diffraction, nuclear resonance scattering, inelastic neutron scattering, M ossbauer spectroscopy, and transmission electron microscopy. Furthermore, for Bi2Te3 materials, ab-initio calculations together with equilibrium and non-equilibrium molecular dynamics simulations for point defects yielded their formation energies and their effect on lattice thermal conductivity, respectively. Current advances in thermoelectric Bi2Te3 and CoSb3 based nanomaterials are

  6. High performance Zintl phase TE materials with embedded nanoparticles |

    Broader source: Energy.gov (indexed) [DOE]

    Department of Energy Performance of zintl phase thermoelectric materials with embedded particles are evaluated shakouri.pdf (2.3 MB) More Documents & Publications High performance Zintl phase TE materials with embedded nanoparticles High Performance Zintl Phase TE Materials with Embedded Particles Thermoelectrics Partnership: High Performance Thermoelectric Waste Heat Recovery System Based on Zintl Phase Materials with Embedded Nanoparticles

  7. ETA-NAC007 - Control of Measuring and Test Equipment (M&TE)

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Control of Measuring and Test Equipment (M&TE) Prepared by Electric Transportation ... of calibration standards and Measuring and Test Equipment (M&TE) used for measuring, ...

  8. ETA-UAC07 - Control of Measuring and Test Equipment (M&TE)

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    "Control of Measuring and Test Equipment (M&TE)" Prepared by Electric Transportation ... of calibration standards and Measuring and Test Equipment (M&TE) used for measuring, ...

  9. Thermoelectric device including an alloy of GeTe and AgSbTe as the P-type element

    DOE Patents [OSTI]

    Skrabek, Emanuel Andrew; Trimmer, Donald Smith

    1976-01-01

    Improved alloys suitable for thermoelectric applications and having the general formula: (AgSbTe.sub.2).sub.1.sub.-x + (GeTe).sub.x wherein x has a value of about 0.80 and 0.85, have been found to possess unexpectedly high thermoelectric properties such as efficiency index, as well as other improved physical properties.

  10. Multiband Te p Based Superconductivity of Ta4Pd3Te16

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Singh, David J.

    2014-10-06

    We recently discovered that Ta4Pd3Te16 is a superconductor that has been suggested to be an unconventional superconductor near magnetism. Here, we report electronic structure calculations showing that despite the layered crystal structure the material is an anisotropic three-dimensional (3D) metal. The Fermi surface contains prominent one-dimensional (1D) and two-dimensional (2D) features, including nested 1D sheets, a 2D cylindrical section, and a 3D sheet. Moreover, the electronic states that make up the Fermi surface are mostly derived from Te p states with small Ta d and Pd d contributions. This places the compound far from magnetic instabilities. The results are discussedmore » in terms of multiband superconductivity.« less

  11. Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films

    DOE Patents [OSTI]

    Gessert, Timothy A.

    1999-01-01

    A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

  12. Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films

    DOE Patents [OSTI]

    Gessert, T.A.

    1999-06-01

    A method of is disclosed improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurium-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact. 11 figs.

  13. Surveying the TeV Sky with Milagro

    SciTech Connect (OSTI)

    Lansdell, C. P.

    2006-07-11

    A wide field of view, high duty factor, TeV gamma-ray observatory is essential for studying TeV astrophysical sources, because most of these sources are either highly variable or are extended. Milagro is such a TeV detector and has performed the deepest survey of the Northern Hemisphere sky. In addition to detecting the known TeV sources of the Crab Nebula and Markarian 421, Milagro has made the first detection of diffuse TeV emission from the Galactic plane. The Milagro data has been searched for unknown point sources and extended sources. Evidence for a new extended TeV source is seen and is coincident with an EGRET unidentified source. The Milagro data has also been searched for the predicted TeV emitters of gamma-ray bursts, galaxy clusters, and EGRET unidentified sources. Based on the success of Milagro, a second generation water Cherenkov gamma-ray observatory is planned which will give an increase in sensitivity of more than an order of magnitude.

  14. Electrochemically deposited BiTe-based nanowires for thermoelectric applications

    SciTech Connect (OSTI)

    Ng, Inn-Khuan; Kok, Kuan-Ying; Rahman, Che Zuraini Che Ab; Saidin, Nur Ubaidah; Ilias, Suhaila Hani; Choo, Thye-Foo

    2014-02-12

    Nanostructured materials systems such as thin-films and nanowires (NWs) are promising for thermoelectric power generation and refrigeration compared to traditional counterparts in bulk, due to their enhanced thermoelectric figures-of-merit. BiTe and its derivative compounds, in particular, are well-known for their near-room temperature thermoelectric performance. In this work, both the binary and ternary BiTe-based nanowires namely, BiTe and BiSbTe, were synthesized using template-assisted electrodeposition. Diameters of the nanowires were controlled by the pore sizes of the anodised alumina (AAO) templates used. Systematic study on the compositional change as a function of applied potential was carried out via Linear Sweep Voltanmetry (LSV). Chemical compositions of the nanowires were studied using Energy Dispersive X-ray Spectrometry (EDXS) and their microstructures evaluated using diffraction and imaging techniques. Results from chemical analysis on the nanowires indicated that while the Sb content in BiSbTe nanowires increased with more negative deposition potentials, the formation of Te{sup 0} and Bi{sub 2}Te{sub 3} were favorable at more positive potentials.

  15. Manufacturing technology development for CuInGaSe sub 2 solar cell modules

    SciTech Connect (OSTI)

    Stanbery, B.J. )

    1991-11-01

    The report describes research performed by Boeing Aerospace and Electronics under the Photovoltaic Manufacturing Technology project. We anticipate that implementing advanced semiconductor device fabrication techniques to the production of large-area CuIn{sub 1-x}Ga{sub x}Se{sub 2} (CIGS)/Cd{sub 1-y}Zn{sub y}S/ZnO monolithically integrated thin-film solar cell modules will enable 15% median efficiencies to be achieved in high-volume manufacturing. We do not believe that CuInSe{sub 2} (CIS) can achieve this efficiency in production without sufficient gallium to significantly increase the band gap, thereby matching it better to the solar spectrum (i.e., x{ge}0.2). Competing techniques for CIS film formation have not been successfully extended to CIGS devices with such high band gaps. The SERI-confirmed intrinsic stability of CIS-based photovoltaics renders them far superior to a-Si:H-based devices, making a 30-year module lifetime feasible. The minimal amounts of cadmium used in the structure we propose, compared to CdTe-based devices, makes them environmentally safer and more acceptable to both consumers and relevant regulatory agencies. Large-area integrated thin-film CIGS modules are the product most likely to supplant silicon modules by the end of this decade and enable the cost improvements which will lead to rapid market expansion.

  16. SE-MA-NO Electric Coop | Open Energy Information

    Open Energy Info (EERE)

    SE-MA-NO Electric Coop Jump to: navigation, search Name: SE-MA-NO Electric Coop Place: Missouri Phone Number: (417) 924-3291 Website: www.semano.com Facebook: https:...

  17. Dielectric functions and carrier concentrations of Hg{sub 1−x}Cd{sub x}Se films determined by spectroscopic ellipsometry

    SciTech Connect (OSTI)

    Lee, A. J.; Peiris, F. C.; Brill, G.; Doyle, K.; Myers, T. H.

    2015-08-17

    Spectroscopic ellipsometry, ranging from 35 meV to 6 eV, was used to determine the dielectric functions of a series of molecular beam epitaxy-grown Hg{sub 1−x}Cd{sub x}Se thin films deposited on both ZnTe/Si(112) and GaSb(112) substrates. The fundamental band gap as well as two higher-order electronic transitions blue-shift with increasing Cd composition in Hg{sub 1−x}Cd{sub x}Se, as expected. Representing the free carrier absorption with a Drude oscillator, we found that the effective masses of Hg{sub 1−x}Cd{sub x}Se (grown on ZnTe/Si) vary between 0.028 and 0.050 times the free electron mass, calculated using the values of carrier concentration and the mobility obtained through Hall measurements. Using these effective masses, we determined the carrier concentrations of Hg{sub 1−x}Cd{sub x}Se samples grown on GaSb, which is of significance as films grown on such doped-substrates posit ambiguous results when measured by conventional Hall experiments. These models can serve as a basis for monitoring Cd-composition during sample growth through in-situ spectroscopic ellipsometry.

  18. MgSe/ZnSe/CdSe coupled quantum wells grown on InP substrate with intersubband absorption covering 1.55??m

    SciTech Connect (OSTI)

    Chen, Guopeng; Shen, Aidong; De Jesus, Joel; Tamargo, Maria C.

    2014-12-08

    The authors report the observation of intersubband (ISB) transitions in the optical communication wavelength region in MgSe/ZnSe/CdSe coupled quantum wells (QWs). The coupled QWs were grown on InP substrates by molecular beam epitaxy. By inserting ZnSe layers to compensate the strain, samples with high structural quality were obtained, as indicated by well resolved satellite peaks in high-resolution x-ray diffraction. The observed ISB transition energies agree well with the calculated values.

  19. Goodman Manufacturing: Order (2011-SE-4301) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Goodman Manufacturing: Order (2011-SE-4301) Goodman Manufacturing: Order (2011-SE-4301) March 2, 2012 DOE ordered Goodman Manufacturing Company, L.P., to pay a $14,800 civil penalty after finding Goodman had manufactured and distributed in commerce in the U.S. at least 74 units of commercial package air conditioner basic model CPC180*. Goodman Manufacturing: Order (2011-SE-4301) (131.78 KB) More Documents & Publications Goodman Manufacturing: Proposed Penalty (2011-SE-4301) Goodman

  20. Barron: Order (2013-SE-5402) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Order (2013-SE-5402) Barron: Order (2013-SE-5402) March 22, 2016 DOE ordered Barron Lighting Group, Inc. to pay a $22,849 civil penalty after finding Barron had manufactured and distributed in commerce in the U.S. 429 units of various noncompliant metal halide lamp fixtures. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Barron. Barron: Order (2013-SE-5402) (19.24 KB) More Documents & Publications Barron: Noncompliance Determination (2013-SE-5402)

  1. Cu Migration in Polycrystalline CdTe Solar Cells

    SciTech Connect (OSTI)

    Guo, Da; Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Vasileska, Dragica; Ringhofer, Christian

    2014-03-12

    An impurity reaction-diffusion model is applied to Cu defects and related intrinsic defects in polycrystalline CdTe for a better understanding of Cu’s role in the cell level reliability of CdTe PV devices. The simulation yields transient Cu distributions in polycrystalline CdTe during solar cell processing and stressing. Preliminary results for Cu migration using available diffusivity and solubility data show that Cu accumulates near the back contact, a phenomena that is commonly observed in devices after back-contact processing or stress conditions.

  2. Process Development for High Voc CdTe Solar Cells

    SciTech Connect (OSTI)

    Ferekides, C. S.; Morel, D. L.

    2011-05-01

    This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

  3. Ba2TeO: A new layered oxytelluride

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Besara, T.; Ramirez, D.; Sun, J.; Whalen, J. B.; Tokumoto, T. D.; McGill, S. A.; Singh, D. J.; Siegrist, T.

    2015-02-01

    For single crystals of the new semiconducting oxytelluride phase, Ba2TeO, we synthesized from barium oxide powder and elemental tellurium in a molten barium metal flux. Ba2TeO crystallizes in tetragonal symmetry with space group P4/nmm (#129), a=5.0337(1) Å, c=9.9437(4) Å, Z=2. The crystals were characterized by single crystal x-ray diffraction, heat capacity and optical measurements. Moreover, the optical measurements along with electronic band structure calculations indicate semiconductor behavior with a band gap of 2.93 eV. Resistivity measurements show that Ba2TeO is highly insulating.

  4. SE-72/AS-72 generator system based on Se extraction/ As reextraction

    DOE Patents [OSTI]

    Fassbender, Michael Ernst; Ballard, Beau D

    2013-09-10

    The preparation of a .sup.72Se/.sup.72As radioisotope generator involves forming an acidic aqueous solution of an irradiated alkali bromide target such as a NaBr target, oxidizing soluble bromide in the solution to elemental bromine, removing the elemental bromine, evaporating the resulting solution to a residue, removing hydrogen chloride from the residue, forming an acidic aqueous solution of the residue, adding a chelator that selectively forms a chelation complex with selenium, and extracting the chelation complex from the acidic aqueous solution into an organic phase. As the .sup.72Se generates .sup.72As in the organic phase, the .sup.72As may be extracted repeatedly from the organic phase with an aqueous acid solution.

  5. Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Xufan; Lin, Ming-Wei; Lin, Junhao; Huang, Bing; Puretzky, Alexander A.; Ma, Cheng; Wang, Kai; Zhou, Wu; Pantelides, Sokrates T.; Chi, Miaofang; et al

    2016-04-01

    Two-dimensional (2D) heterostructures hold the promise for future atomically-thin electronics and optoelectronics due to their diverse functionalities. While heterostructures consisting of different transition metal dichacolgenide monolayers with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) or edge epitaxy, constructing heterostructures from monolayers of layered semiconductors with large lattice misfits still remains challenging. Here, we report the growth of monolayer GaSe/MoSe2 heterostructures with large lattice misfit by two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between themore » two layers, forming an incommensurate vdW heterostructure. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2 monolayer domains in lateral GaSe/MoSe2 heterostructures, GaSe monolayers are found to overgrow MoSe2 during CVD, forming a stripe of vertically stacked vdW heterostructure at the crystal interface. Such vertically-stacked vdW GaSe/MoSe2 heterostructures are shown to form p-n junctions with effective transport and separation of photo-generated charge carriers between layers, resulting in a gate-tunable photovoltaic response. In conclusion, these GaSe/MoSe2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.« less

  6. Spectral photoresponse of ZnSe/GaAs(001) heterostructures with CdSe ultra-thin quantum well insertions

    SciTech Connect (OSTI)

    Valverde-Chvez, D. A.; Sutara, F.; Hernndez-Caldern, I.

    2014-05-15

    We present a study of the spectral photoresponse (SPR) of ZnSe/GaAs(001) heterostructures for different ZnSe film thickness with and without CdSe ultra-thin quantum well (UTQW) insertions. We observe a significant increase of the SPR of heterostructures containing 3 monolayer thick CdSe UTQW insertions; these results encourage their use in photodetectors and solar cells.

  7. Twinning effect on photoluminescence spectra of ZnSe nanowires

    SciTech Connect (OSTI)

    Xu, Jing; Wang, Chunrui Wu, Binhe; Xu, Xiaofeng; Chen, Xiaoshuang; Oh, Hongseok; Baek, Hyeonjun; Yi, Gyu-Chul

    2014-11-07

    Bandgap engineering in a single material along the axial length of nanowires may be realized by arranging periodic twinning, whose twin plane is vertical to the axial length of nanowires. In this paper, we report the effect of twin on photoluminescence of ZnSe nanowires, which refers to the bandgap of it. The exciton-related emission peaks of transverse twinning ZnSe nanowires manifest a 10-meV-blue-shift in comparison with those of longitudinal twinning ZnSe nanowires. The blue-shift is attributed to quantum confinement effect, which is influenced severely by the proportion of wurtzite ZnSe layers in ZnSe nanowires.

  8. Native defects in MBE-grown CdTe

    SciTech Connect (OSTI)

    Olender, Karolina; Wosinski, Tadeusz; Makosa, Andrzej; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz

    2013-12-04

    Deep-level traps in both n- and p-type CdTe layers, grown by molecular-beam epitaxy on GaAs substrates, have been investigated by means of deep-level transient spectroscopy (DLTS). Four of the traps revealed in the DLTS spectra, which displayed exponential kinetics for capture of charge carriers into the trap states, have been assigned to native point defects: Cd interstitial, Cd vacancy, Te antisite defect and a complex formed of the Te antisite and Cd vacancy. Three further traps, displaying logarithmic capture kinetics, have been ascribed to electron states of treading dislocations generated at the mismatched interface with the substrate and propagated through the CdTe layer.

  9. Modeling Copper Diffusion in Polycrystalline CdTe Solar Cells

    SciTech Connect (OSTI)

    Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Guo, Da; Vasileska, Dragica; Ringhofer, Christain

    2014-06-06

    It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystalline, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately

  10. Extracting Cu Diffusion Parameters in Polycrystalline CdTe

    SciTech Connect (OSTI)

    Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Guo, Da; Dragica, Vasileska; Ringhofer, Christian

    2014-06-13

    It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystal-line, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately.

  11. CdTe Solar Cells: The Role of Copper

    SciTech Connect (OSTI)

    Guo, Da; Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Vasileska, Dragica; Ringhofer, Christain

    2014-06-06

    In this work, we report on developing 1D reaction-diffusion solver to understand the kinetics of p-type doping formation in CdTe absorbers and to shine some light on underlying causes of metastabilities observed in CdTe PV devices. Evolution of intrinsic and Cu-related defects in CdTe solar cell has been studied in time-space domain self-consistently with free carrier transport and Poisson equation. Resulting device performance was simulated as a function of Cu diffusion anneal time showing pronounced effect the evolution of associated acceptor and donor states can cause on device characteristics. Although 1D simulation has intrinsic limitations when applied to poly-crystalline films, the results suggest strong potential of the approach in better understanding of the performance and metastabilities of CdTe photovoltaic device.

  12. PVA TePla AG | Open Energy Information

    Open Energy Info (EERE)

    search Name: PVA TePla AG Place: Asslar, Germany Zip: 35614 Product: Supplier of plants and equipment for vacuum systems, crystal-growing systems and plasma systems, some of...

  13. Summary of the TeV33 working group

    SciTech Connect (OSTI)

    Bagley, P.P.; Bieniosek, F.M.; Colestock, P.

    1996-10-01

    This summary of the TeV33 working group at Snowmass reports on work in the areas of Tevatron store parameters, the beam-beam interaction, Main Injector intensity (slip stacking), antiproton production, and electron cooling.

  14. Extreme solid state refrigeration using nanostructured Bi-Te alloys.

    SciTech Connect (OSTI)

    Lima Sharma, Ana L.; Spataru, Dan Catalin; Medlin, Douglas L.; Sharma, Peter Anand; Morales, Alfredo Martin

    2009-09-01

    Materials are desperately needed for cryogenic solid state refrigeration. We have investigated nanostructured Bi-Te alloys for their potential use in Ettingshausen refrigeration to liquid nitrogen temperatures. These alloys form alternating layers of Bi{sub 2} and Bi{sub 2}Te{sub 3} blocks in equilibrium. The composition Bi{sub 4}Te{sub 3} was identified as having the greatest potential for having a high Ettingshausen figure of merit. Both single crystal and polycrystalline forms of this material were synthesized. After evaluating the Ettingshausen figure of merit for a large, high quality polycrystal, we simulated the limits of practical refrigeration in this material from 200 to 77 K using a simple device model. The band structure was also computed and compared to experiments. We discuss the crystal growth, transport physics, and practical refrigeration potential of Bi-Te alloys.

  15. Substrate CdTe Efficiency Improvements - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate CdTe Efficiency Improvements National Renewable Energy Laboratory Contact NREL About This Technology Publications: PDF Document Publication 11-28PCT Application as-published (984 KB) Technology Marketing Summary Thin film solar cells have been the focus of many research facilities in recent years that are working to decrease manufacturing costs and increase cell efficiency. Cadmium telluride (CdTe) has been well recognized as a promising photovoltaic material for thin film solar cells

  16. High-quality CdTe films from nanoparticle precursors

    SciTech Connect (OSTI)

    Schulz, D.L.; Pehnt, M.; Urgiles, E.

    1996-05-01

    In this paper the authors demonstrate that nanoparticulate precursors coupled with spray deposition offers an attractive route into electronic materials with improved smoothness, density, and lower processing temperatures. Employing a metathesis approach, cadmium iodide was reacted with sodium telluride in methanol solvent, resulting in the formation of soluble NaI and insoluble CdTe nanoparticles. After appropriate chemical workup, methanol-capped CdTe colloids were isolated. CdTe thin film formation was achieved by spray depositing the nanoparticle colloids (25-75 {Angstrom} diameter) onto substrates at elevated temperatures (T = 280-440{degrees}C) with no further thermal treatment. These films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Cubic CdTe phase formation was observed by XRD, with a contaminant oxide phase also detected. XPS analysis showed that CdTe films produced by this one-step method contained no Na or C and substantial O. AFM gave CdTe grain sizes of {approx}0.1-0.3 {mu}m for film sprayed at 400{degrees}C. A layer-by-layer film growth mechanism proposed for the one-step spray deposition of nanoparticle precursors will be discussed.

  17. Phonon self-energy and origin of anomalous neutron scattering spectra in SnTe and PbTe thermoelectrics

    SciTech Connect (OSTI)

    Li, Chen [ORNL] [ORNL; Ma, Jie [ORNL] [ORNL; May, Andrew F [ORNL] [ORNL; Cao, Huibo [ORNL] [ORNL; Christianson, Andrew D [ORNL] [ORNL; Ehlers, Georg [ORNL] [ORNL; Singh, David J [ORNL] [ORNL; Sales, Brian C [ORNL] [ORNL; Delaire, Olivier A [ORNL] [ORNL

    2014-01-01

    The anharmonic lattice dynamics of rock-salt thermoelectric compounds SnTe and PbTe are investigated with inelastic neutron scattering (INS) and first-principles calculations. The experiments show that, surprisingly, although SnTe is closer to the ferroelectric instability, phonon spectra in PbTe exhibit a more anharmonic character. This behavior is reproduced in first-principles calculations of the temperature-dependent phonon self-energy. Our simulations reveal how the nesting of phonon dispersions induces prominent features in the self-energy, which account for the measured INS spectra and their temperature dependence. We establish that the phase-space for three-phonon scattering processes, rather than just the proximity to the lattice instability, is the mechanism determining the complex spectrum of the transverse-optical ferroelectric mode.

  18. Thermoelectric transport of Se-rich Ag{sub 2}Se in normal phases and phase transitions

    SciTech Connect (OSTI)

    Mi, Wenlong; Lv, Yanhong; Qiu, Pengfei; Shi, Xun E-mail: cld@mail.sic.ac.cn; Chen, Lidong E-mail: cld@mail.sic.ac.cn; Zhang, Tiansong

    2014-03-31

    Small amount of Se atoms are used to tune the carrier concentrations (n{sub H}) and electrical transport in Ag{sub 2}Se. Significant enhancements in power factor and thermoelectric figure of merit (zT) are observed in the compositions of Ag{sub 2}Se{sub 1.06} and Ag{sub 2}Se{sub 1.08}. The excessive Se atoms do not change the intrinsically electron-conducting character in Ag{sub 2}Se. The detailed analysis reveals the experiment optimum carrier concentration in Ag{sub 2}Se is around 5??10{sup 18}?cm{sup ?3}. We also investigate the temperature of maximum zT and the thermoelectric transport during the first order phase transitions using the recently developed measurement system.

  19. Confined lattice dynamics of single and quadruple SnSe bilayers in [(SnSe) 1.04 ] m [MoSe 2 ] n ferecrystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Klobes, Benedikt; Hu, Michael Y.; Beekman, Matt; Johnson, David C.; Hermann, Raphaël P.

    2015-11-30

    The Sn specific densities of phonon states in the SnSe subunits of [(SnSe)1.04]m[MoSe2]n ferecrystals with (m,n) = (1,1), (4,1) and in bulk SnSe were derived from nuclear inelastic scattering by the 119Sn M ssbauer resonance. When using different measurement configurations, phonons with polarization parallel and perpendicular to the ferecrystal plane were specifically probed. Vibrational properties and phonon spectral weight are found to strongly depend on the phonon polarization and layer count m. Moreover, a highly peculiar feature of these ferecrystal densities of phonon states is the emergence of rather sharp high energy vibrational modes polarized perpendicular to the ferecrystal plane,more » which contrasts with usual findings in thin layered structures and nanostructured materials in general, and a depletion of modes with a gap appearing between acoustic and high energy modes. The spectral weight of these phonons depends on the overall SnSe content, m, but cannot be unambiguously attributed to SnSe MoSe2 interfaces. Considering the low energy part of lattice dynamics, ferecrystals exhibit rather low average phonon group velocities as compared to the speed of sound in the long wavelength limit. For the (1,1) ferecrystal, this effect is most pronounced for vibrations polarized in the ferecrystal plane. Therefore, an experimental microscopic origin for the vibrational and bonding anisotropy in subunits of ferecrystals is provided.« less

  20. CuInSe/sub 2/-based photoelectrochemical cells: their use in characterization of thin CuInSe/sub 2/ films, and as photovoltaic cells per se

    SciTech Connect (OSTI)

    Cahen, D.; Chen, Y.W.; Ireland, P.J.; Noufi, R.; Turner, J.A.; Rincon, C.; Bachmann, K.J.

    1984-05-01

    Photoelectrochemistry has been employed to characterize the p-CuInSe/sub 2/ component of the CdS/CuInSe/sub 2/ on-metal and a nonaqueous electrolyte containing a redox couple not specifically adsorbed onto the semiconductor, we can test the films for photovoltaic activity and obtain effective electronic properties of them, before CdS deposition, in a nondestructive manner. Electrochemical decomposition of CuInSe/sub 2/ was investigated in acetonitrile solutions to determine the mechanism of decomposition (n and p) in the dark and under illumination. Electrochemical, solution chemical and surface analyses confirmed at the light-assisted decomposition of CuInSe/sub 2/ resulted in metal ions and elemental chalcogen. On the basis of the results from the electrochemical decomposition, and studies on the solid state chemistry of the (Cu/sub 2/Se)/sub x/(In/sub 2/Se/sub 3/)/sub 1-x/ system and surface analyses, the CuInSe/sub 2//polyiodide interface was stabilized and up to 11.7% conversion efficiencies were obtained.

  1. Effects of Cu Diffusion from ZnTe:Cu/Ti Contacts on Carrier Lifetime of CdS/CdTe Thin Film Solar Cells: Preprint

    SciTech Connect (OSTI)

    Gessert, T. A.; Metzger, W. K.; Asher, S. E.; Young, M. R.; Johnston, S.; Dhere, R. G.; Duda, A.

    2008-05-01

    We study the performance of CdS/CdTe thin film PV devices processed with a ZnTe:Cu/Ti contact to investigate how carrier lifetime in the CdTe layer is affected by Cu diffusion from the contact.

  2. Local composition and carrier concentration in Pb0.7Ge0.3Te and Pb0.5Ge0.5Te alloys from 125Te NMR and microscopy

    SciTech Connect (OSTI)

    Levin, E M; Kramer, M J; Schmidt-Rohr, K

    2014-11-01

    Pb0.7Ge0.3Te and Pb0.5Ge0.5Te alloys, (i) quenched from 923 K or (ii) quenched and annealed at 573 K for 2 h, have been studied by 125Te NMR, X-ray diffraction, electron and optical microscopy, as well as energy dispersive spectroscopy. Depending on the composition and thermal treatment history, 125Te NMR spectra exhibit different resonance frequencies and spin-lattice relaxation times, which can be assigned to different phases in the alloy. Quenched and annealed Pb0.7Ge0.3Te alloys can be considered as solid solutions but are shown by NMR to have components with various carrier concentrations. Quenched and annealed Pb0.5Ge0.5Te alloys contain GeTe- and PbTe-based phases with different compositions and charge carrier concentrations. Based on the analysis of non-exponential 125Te NMR spin-lattice relaxation, the fractions and carrier concentrations of the various phases have been estimated. Our data show that alloying of PbTe with Ge results in the formation of chemically and electronically inhomogeneous systems. 125Te NMR can be used as an efficient probe to detect the local composition in equilibrium as well as non-equilibrium states, and to determine the local carrier concentrations in complex multiphase tellurides.

  3. Perlick: Agreement (2010-SE-0109) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Perlick: Agreement (2010-SE-0109) Perlick: Agreement (2010-SE-0109) February 7, 2011 DOE and Perlick Residential & Hospitality Products entered into a Compromise Agreement in which Perlick agreed to pay a $5,000 civil penalty after DOE found that Perlick had manufactured and distributed in commerce in the U.S. model HP72ROO-S, a noncompliant refrigerator. The Compromise Agreement reflected the settlement terms between DOE and Perlick. Perlick: Agreement (2010-SE-0109) (240.67 KB) More

  4. Research Forum Schedule-Research-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Forum Schedule PHaSE Research Fora and Talks This webpage is provided for legacy archive purposes only, as of 30 April 2015.

  5. SE Idaho Load Service Update - June 10, 2015

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SE-Idaho-Load-Service-Update---June-10,-2015 Sign In About | Careers | Contact | Investors | bpa.gov Search Doing Business Expand Doing Business Customer Involvement Expand...

  6. U-105:Oracle Java SE Critical Patch Update Advisory

    Broader source: Energy.gov [DOE]

    Multiple vulnerabilities were reported in Oracle Java SE. A remote user can execute arbitrary code on the target system. A remote user can cause denial of service conditions.

  7. SeQuential Biofuels LLC | Open Energy Information

    Open Energy Info (EERE)

    Biofuels LLC Jump to: navigation, search Name: SeQuential Biofuels LLC Place: Portland, Oregon Zip: 97231 Sector: Biofuels Product: A biofuels marketing and distribution company...

  8. CdSe self-assembled quantum dots with ZnCdMgSe barriers emitting throughout the visible spectrum

    SciTech Connect (OSTI)

    Perez-Paz, M. Noemi; Zhou Xuecong; Munoz, Martin; Lu Hong; Sohel, Mohammad; Tamargo, Maria C.; Jean-Mary, Fleumingue; Akins, Daniel L.

    2004-12-27

    Self-assembled quantum dots of CdSe with ZnCdMgSe barriers have been grown by molecular beam epitaxy on InP substrates. The optical and microstructural properties were investigated using photoluminescence (PL) and atomic force microscopy (AFM) measurements. Control and reproducibility of the quantum dot (QD) size leading to light emission throughout the entire visible spectrum range has been obtained by varying the CdSe deposition time. Longer CdSe deposition times result in a redshift of the PL peaks as a consequence of an increase of QD size. AFM studies demonstrate the presence of QDs in uncapped structures. A comparison of this QD system with CdSe/ZnSe shows that not only the strain but also the chemical properties of the system play an important role in QD formation.

  9. The half-life of {sup 131g,m}Te

    SciTech Connect (OSTI)

    Ruivo, J. C.; Zamboni, C. B.; Oliveira, J. R. B.; Heder Medina, Nilberto

    2013-05-06

    In this work, the half-lives of {sup 131m}Te and {sup 131g}Te were measured. Radioactive sources of {sup 131}Te were obtained using the {sup 130}Te(n,{gamma}){sup 131}Te nuclear reaction. These nuclear parameters have been determined with a better confidence and accuracy than previously available: 18.89 {+-} 0.11 min and 33.18 {+-} 0.13 h, respectively. These results are quite helpful for new calculations that attempt to describe the low-lying levels in {sup 131}I from the decay of {sup 131g,m}Te.

  10. Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy

    SciTech Connect (OSTI)

    DiNezza, Michael J.; Liu, Shi; Kirk, Alexander P.; Zhang, Yong-Hang; School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 ; Zhao, Xin-Hao; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287

    2013-11-04

    CdTe/MgCdTe double heterostructures (DHs) are grown on InSb substrates using molecular beam epitaxy and reveal strong photoluminescence with over double the intensity of a GaAs/AlGaAs DH with an identical layer structure design grown on GaAs. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a Shockley-Read-Hall recombination lifetime of 86 ns, which is more than one order of magnitude longer than that of typical polycrystalline CdTe films. These findings indicate that monocrystalline CdTe/MgCdTe DHs effectively reduce surface recombination, have limited nonradiative interface recombination, and are promising for solar cells that could reach power conversion efficiencies similar to that of GaAs.

  11. Resetting the Defect Chemistry in CdTe

    SciTech Connect (OSTI)

    Metzger, Wyatt K.; Burst, James; Albin, David; Colegrove, Eric; Moseley, John; Duenow, Joel; Farrell, Stuart; Moutinho, Helio; Reese, Matt; Johnston, Steve; Barnes, Teresa; Perkins, Craig; Guthrey, Harvey; Al-Jassim, Mowafak

    2015-06-14

    CdTe cell efficiencies have increased from 17% to 21% in the past three years and now rival polycrystalline Si [1]. Research is now targeting 25% to displace Si, attain costs less than 40 cents/W, and reach grid parity. Recent efficiency gains have come largely from greater photocurrent. There is still headroom to lower costs and improve performance by increasing open-circuit voltage (Voc) and fill factor. Record-efficiency CdTe cells have been limited to Voc <; 880 mV, whereas GaAs can attain Voc of 1.10 V with a slightly smaller bandgap [2,3]. To overcome this barrier, we seek to understand and increase lifetime and carrier concentration in CdTe. In polycrystalline structures, lifetime can be limited by interface and grain-boundary recombination, and attaining high carrier concentration is complicated by morphology.

  12. Indication of Te segregation in laser-irradiated ZnTe observed by in situ coherent-phonon spectroscopy

    SciTech Connect (OSTI)

    Shimada, Toru; Kamaraju, N.; Frischkorn, Christian; Wolf, Martin; Kampfrath, Tobias

    2014-09-15

    We irradiate a ZnTe single crystal with 10-fs laser pulses at a repetition rate of 80 MHz and investigate its resulting gradual modification by means of coherent-phonon spectroscopy. We observe the emergence of a phonon mode at about 3.6 THz whose amplitude and lifetime grow monotonously with irradiation time. The speed of this process depends sensitively on the pump-pulse duration. Our observations strongly indicate that the emerging phonon mode arises from a Te phase induced by multiphoton absorption of incident laser pulses. A potential application of our findings is laser-machining of microstructures in the bulk of a ZnTe crystal, a highly relevant electrooptic material.

  13. Energy Sources for Yotta-TeV Iceberg Showers (Conference) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    Energy Sources for Yotta-TeV Iceberg Showers Citation Details In-Document Search Title: Energy Sources for Yotta-TeV Iceberg Showers You are accessing a document from the ...

  14. Resonant Level Enhancement of the Thermoelectric Power of Bi2Te3...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Resonant Level Enhancement of the Thermoelectric Power of Bi2Te3 with Tin Resonant Level Enhancement of the Thermoelectric Power of Bi2Te3 with Tin Application to practical p-type...

  15. ETA-HIAC07 - Control of Measuring and Test Equipment (M&TE)

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Control of Measuring and Test Equipment (M&TE) Prepared by Electric Transportation ... The objective of this procedure is to assure that Measuring and Test Equipment (M&TE) used ...

  16. ETA-HAC07 - Control of Measuring and Test Equipment (M&TE)

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Control of Measuring and Test Equipment (M&TE) Prepared by Electric Transportation ... The objective of this procedure is to assure that Measuring and Test Equipment (M&TE) used ...

  17. Probing TeV physics in the structure of the neutron (Technical...

    Office of Scientific and Technical Information (OSTI)

    Probing TeV physics in the structure of the neutron Citation Details In-Document Search Title: Probing TeV physics in the structure of the neutron You are accessing a document ...

  18. Energy Sources for Yotta-TeV Iceberg Showers (Conference) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    Energy Sources for Yotta-TeV Iceberg Showers Citation Details In-Document Search Title: Energy Sources for Yotta-TeV Iceberg Showers In late February of 2002, warming climate along ...

  19. First-principles study of roles of Cu and Cl in polycrystalline CdTe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yang, Ji -Hui; Yin, Wan -Jian; Park, Ji -Sang; Metzger, Wyatt; Wei, Su -Huai

    2016-01-25

    In this study, Cu and Cl treatments are important processes to achieve high efficiency polycrystalline cadmium telluride (CdTe) solar cells, thus it will be beneficial to understand the roles they play in both bulk CdTe and CdTe grain boundaries (GBs). Using first-principles calculations, we systematically study Cu and Cl-related defects in bulk CdTe. We find that Cl has only a limited effect on improving p-type doping and too much Cl can induce deep traps in bulk CdTe, whereas Cu can enhance ptype doping of bulk CdTe. In the presence of GBs, we find that, in general, Cl and Cu willmore » prefer to stay at GBs, especially for those with Te-Te wrong bonds, in agreement with experimental observations.« less

  20. CdTe Thin Film Solar Cells and Modules Tutorial; NREL (National Renewable Energy Laboratory)

    SciTech Connect (OSTI)

    Albin, David S.

    2015-06-13

    This is a tutorial presented at the 42nd IEEE Photovoltaics Specialists Conference to cover the introduction, background, and updates on CdTe cell and module technology, including CdTe cell and module structure and fabrication.

  1. Pressure-induced Phase Transition in Thiol-capped CdTe Nanoparticles

    SciTech Connect (OSTI)

    Wu, F; Zaug, J; Young, C; Zhang, J Z

    2006-11-29

    Phase transitions for CdTe nanoparticles (NPs) under high pressure up to 37.0 GPa have been studied using fluorescence measurements. The phase transition from cinnarbar to rocksalt phase has been observed in CdTe NPs solution at 5.8 GPa, which is much higher than the phase transition pressure of bulk CdTe (3.8 GPa) and that of CdTe NPs in solid form (0.8 GPa). CdTe NPs solution therefore shows elevated phase transition pressure and enhanced stability against pressure compared with bulk CdTe and CdTe NPs in solid forms. The enhanced stability of CdTe NPs solution has been attributed to possible shape change in the phase transition and/or inhomogeneous strains in nanoparticle solutions.

  2. TeV gamma rays from blazars beyond z = 1 ? (Journal Article)...

    Office of Scientific and Technical Information (OSTI)

    TeV gamma rays from blazars beyond z 1 ? Citation Details In-Document Search Title: TeV gamma rays from blazars beyond z 1 ? Authors: Aharonian, Felix ; Essey, Warren ; ...

  3. APT mass spectrometry and SEM data for CdTe solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Chen; Paudel, Naba R.; Yan, Yanfa; Pennycook, Stephen J.; Poplawsky, Jonathan D.; Guo, Wei

    2016-03-16

    Atom probe tomography (APT) data acquired from a CAMECA LEAP 4000 XHR for the CdS/CdTe interface for a non-CdCl2 treated CdTe solar cell as well as the mass spectrum of an APT data set including a GB in a CdCl2-treated CdTe solar cell are presented. Scanning electron microscopy (SEM) data showing the evolution of sample preparation for APT and scanning transmission electron microscopy (STEM) electron beam induced current (EBIC) are also presented. As a result, these data show mass spectrometry peak decomposition of Cu and Te within an APT dataset, the CdS/CdTe interface of an untreated CdTe solar cell, preparationmore » of APT needles from the CdS/CdTe interface in superstrate grown CdTe solar cells, and the preparation of a cross-sectional STEM EBIC sample.« less

  4. Current enhancement of CdTe-based solar cells (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    Current enhancement of CdTe-based solar cells This content will become publicly available on July 30, 2016 Prev Next Title: Current enhancement of CdTe-based solar cells We ...

  5. Current enhancement of CdTe-based solar cells (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    CdTe-based solar cells Citation Details In-Document Search This content will become publicly available on July 30, 2016 Title: Current enhancement of CdTe-based solar cells We ...

  6. AHT: Order (2015-SE-42031) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Order (2015-SE-42031) AHT: Order (2015-SE-42031) March 9, 2016 DOE ordered AHT Cooling Systems, Inc. to pay a $179,040 civil penalty after finding AHT had manufactured and distributed in commerce in the U.S. at least 1,032 units of commercial refrigeration equipment model RIO S 68 L F, a noncompliant product. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and AHT. AHT: Order (2015-SE-42031) (66.05 KB) More Documents & Publications AHT: Proposed Penalty

  7. Optical Probing of metamagnetic phases in epitaxial EuSe

    SciTech Connect (OSTI)

    Galgano, G. D.; Henriques, A. B.; Bauer, G.; Springholz, G.

    2011-12-23

    EuSe is a wide gap magnetic semiconductors with a potential for applications in proof-of-concept spintronic devices. When the temperature is lowered, EuSe goes through sharp transitions between a variety of magnetic phases and is thus described as metamagnetic. The purpose of the present investigation is to correlate the magnetic order to the sharp dichroic doublet, discovered recently in high quality thin epitaxial layers of EuSe, grown by molecular beam epitaxy. We report detailed measurements of the doublet positions and intensities as a function of magnetic field in low temperatures, covering several magnetic phases.

  8. Bu Sung: Order (2015-SE-42007) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Order (2015-SE-42007) Bu Sung: Order (2015-SE-42007) October 13, 2015 DOE ordered Bu Sung America Corporation to pay a $71,480 civil penalty after finding Bu Sung had manufactured and distributed in commerce in the U.S. at least 361 units of basic model ESRF2, a noncompliant commercial refrigerator-freezer. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Bu Sung. Bu Sung: Order (2015-SE-42007) (123.64 KB) More Documents & Publications Bu Sung:

  9. Victory: Order (2015-SE-42033) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Order (2015-SE-42033) Victory: Order (2015-SE-42033) October 27, 2015 DOE ordered Victory Refrigeration to pay a $1,600 civil penalty after finding Victory had manufactured and distributed in commerce in the U.S. at least 8 units of commercial refrigerator-freezer basic model RFS-1D-S1-EW-PT-HD, a noncompliant product. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Victory. Victory: Order (2015-SE-42033) (21.59 KB) More Documents & Publications

  10. Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)

    SciTech Connect (OSTI)

    Gessert, T. A.

    2010-09-01

    Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

  11. Optical Properties of CdSe Nanoparticle Assemblies

    SciTech Connect (OSTI)

    Huser, T; Gerion, D; Zaitseva, N; Krol, D M; Leon, F R

    2003-11-24

    We report on three-dimensional fluorescence imaging of micron-size faceted crystals precipitated from solutions of CdSe nanocrystals. Such crystals have previously been suggested to be superlattices of CdSe quantum dots [1,2]. Possible applications for these materials include their use in optical and optoelectronic devices. The micron-size crystals were grown by slow evaporation from toluene solutions of CdSe nanocrystals in the range of 3-6 nm, produced by traditional wet-chemistry techniques. By using a confocal microscope with laser illumination, three-dimensional raster-scanning and synchronized hyper-spectral detection, we have generated spatial profiles of the fluorescence emission intensity and spectrum. The fluorescence data of the micro-crystals were compared with spectra of individual nanocrystals obtained from the same solution. The results do not support the assertion that these microcrystals consist of CdSe superlattices.

  12. Synthesis and properties of new CdSe-AgI-As{sub 2}Se{sub 3} chalcogenide glasses

    SciTech Connect (OSTI)

    Kassem, M.; ULCO, LPCA, EAC CNRS 4493 F-59140 Dunkerque ; Le Coq, D.; Fourmentin, M.; Hindle, F.; Bokova, M.; Cuisset, A.; Masselin, P.; Bychkov, E.; ULCO, LPCA, EAC CNRS 4493 F-59140 Dunkerque

    2011-02-15

    Research highlights: {yields} Determination of the glass-forming region in the pseudo-ternary CdSe-AgI-As{sub 2}Se{sub 3} system. {yields} Characterization of macroscopic properties of the new CdSe-AgI-As{sub 2}Se{sub 3} glasses. {yields} Far infrared transmission of chalcogenide glasses. {yields} Characterization of the total conductivity of CdSe-AgI-As{sub 2}Se{sub 3} glasses. -- Abstract: The glass-forming region in the pseudo-ternary CdSe-AgI-As{sub 2}Se{sub 3} system was determined. Measurements including differential scanning calorimetry (DSC), density, and X-ray diffraction were performed. The effect resulting from the addition of CdSe or AgI has been highlighted by examining three series of different base glasses. The characteristic temperatures of the glass samples, including glass transition (T{sub g}), crystallisation (T{sub x}), and melting (T{sub m}) temperatures are reported and used to calculate their {Delta}T = T{sub x} - T{sub g} and their Hruby, H{sub r} = (T{sub x} - T{sub g})/(T{sub m} - T{sub x}), criteria. Evolution of the total electrical conductivity {sigma} and the room temperature conductivity {sigma}{sub 298} was also studied. The terahertz transparency domain in the 50-600 cm{sup -1} region was pointed for different chalcogenide glasses (ChGs) and the potential of the THz spectroscopy was suggested to obtain structural information on ChGs.

  13. Haier: Compromise Agreement (2011-SE-1428) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Compromise Agreement (2011-SE-1428) Haier: Compromise Agreement (2011-SE-1428) April 23, 2013 DOE and Haier America Trading, LLC entered into a Compromise Agreement to resolve a case involving the distribution in commerce of residential freezers that did not meet the applicable energy conservation performance standard. Haier agreed to ensure that no additional units of the noncompliant freezers will be distributed in commerce in the U.S. and not to use the same model numbers in the future.

  14. Bu Sung: Proposed Penalty (2015-SE-42007) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Proposed Penalty (2015-SE-42007) Bu Sung: Proposed Penalty (2015-SE-42007) September 29, 2015 DOE alleged in a Notice of Proposed Civil Penalty that Bu Sung America Corporation d/b/a Everest Refrigeration manufactured and distributed noncompliant commercial refrigerator-freezers in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice

  15. True: Order (2015-SE-42049) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    True: Order (2015-SE-42049) True: Order (2015-SE-42049) February 4, 2016 DOE ordered True Manufacturing Co., Inc., to pay a $36,400 civil penalty after finding True had manufactured and distributed in commerce in the U.S. 182 units of True commercial refrigerator basic models TCGG-72 and TCGG-72-S, which did not meet the application energy conservation standard. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and True. Federal law subjects manufacturers and

  16. Utility: Noncompliance Determination (2016-SE-42003) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Noncompliance Determination (2016-SE-42003) Utility: Noncompliance Determination (2016-SE-42003) December 30, 2015 DOE issued a Notice of Noncompliance Determination to Utility Refrigerator finding that commercial refrigeration equipment basic model number PT-R-75-SS-3S-3S-N does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Utility must immediately notify each person (or company) to whom Utility distributed the noncompliant

  17. Victory: Noncompliance Determination (2015-SE-42033) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Noncompliance Determination (2015-SE-42033) Victory: Noncompliance Determination (2015-SE-42033) August 18, 2015 DOE issued a Notice of Noncompliance Determination to Victory Refrigeration finding that commercial refrigeration equipment basic model number RFS-1D-S1-EW-PT-HD (including each individual model within the basic model) does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Victory must immediately notify each person

  18. Victory: Proposed Penalty (2015-SE-42033) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Proposed Penalty (2015-SE-42033) Victory: Proposed Penalty (2015-SE-42033) September 25, 2015 DOE alleged in a Notice of Proposed Civil Penalty that Victory Refrigeration manufactured and distributed noncompliant commercial refrigerator-freezer model RFS-1D-S1-EW-PT-HD in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises

  19. TeVeS gets caught on caustics

    SciTech Connect (OSTI)

    Contaldi, Carlo R.; Wiseman, Toby; Withers, Benjamin

    2008-08-15

    TeVeS uses a dynamical vector field with timelike unit-norm constraint to specify a preferred local frame. When matter moves slowly in this frame--the so-called quasistatic regime--modified Newtonian dynamics results. Theories with such vectors (such as Einstein-Aether) are prone to the vector dynamics forming singularities that render their classical evolution problematic. Here, we analyze the dynamics of the vector in TeVeS in various situations. We begin by analytically showing that the vacuum solution of TeVeS forms caustic singularities under a large class of physically reasonably initial perturbations. This shows the classical evolution of TeVeS appears problematic in the absence of matter. We then consider matter by investigating black hole solutions. We find large classes of new black hole solutions with static geometries, where the curves generated by the vector field are attracted to the black hole and may form caustics. We go on to consider the full dynamics with matter by numerically simulating, assuming spherical symmetry, the gravitational collapse of a scalar, and the evolution of an initially nearly static boson star. We find that in both cases our initial data evolves so that the vector field develops caustic singularities on a time scale of order the gravitational in-fall time. Having shown singularity formation is generic with or without matter, Bekenstein's original formulation of TeVeS appears dynamically problematic. We argue that by modifying the vector field kinetic terms to the more general form used by Einstein-Aether, this problem may be avoided.

  20. Superconducting Bi2Te: Pressure-induced universality in the (Bi2)m(Bi2Te3)n series

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Stillwell, Ryan L.; Jeffries, Jason R.; Jenei, Zsolt; Weir, Samuel T.; Vohra, Yogesh K.

    2016-03-09

    Using high-pressure magnetotransport techniques we have discovered superconductivity in Bi2Te, a member of the infinitely adaptive (Bi2)m(Bi2Te3)n series, whose end members, Bi and Bi2Te3, can be tuned to display topological surface states or superconductivity. Bi2Te has a maximum Tc = 8.6 K at P = 14.5 GPa and goes through multiple high pressure phase transitions, ultimately collapsing into a bcc structure that suggests a universal behavior across the series. High-pressure magnetoresistance and Hall measurements suggest a semi-metal to metal transition near 5.4 GPa, which accompanies the hexagonal to intermediate phase transition seen via x-ray diffraction measurements. In addition, the linearitymore » of Hc2 (T) exceeds the Werthamer-Helfand-Hohenberg limit, even in the extreme spin-orbit scattering limit, yet is consistent with other strong spin-orbit materials. Furthermore, considering these results in combination with similar reports on strong spin-orbit scattering materials seen in the literature, we suggest the need for a new theory that can address the unconventional nature of their superconducting states.« less

  1. The influence of interfaces on properties of thin-film inorganic structural isomers containing SnSeNbSe? Subunits

    SciTech Connect (OSTI)

    Alemayehu, Matti B.; Falmbigl, Matthias; Ta, Kim; Johnson, David C.

    2015-08-28

    Inorganic isomers ([SnSe]1+?)m(NbSe?)n([SnSe]1+?)p(NbSe?)q([SnSe]1+?)r(NbSe?)s where m, n, p, q, r, and s are integers and m + p + r = n + q + s = 4 were prepared using the modulated elemental reactant technique. This series of all six possible isomers provides an opportunity to study the influence of interface density on properties while maintaining the same unit cell size and composition. As expected, all six compounds were observed to have the same atomic compositions and an almost c-axis lattice parameter of ?4.90 (5) nm, with a slight trend in the c-axis lattice parameter correlated with the different number of interfaces in the isomers: two, four and six. The structures of the constituents in the ab-plane were independent of one another, confirming the nonepitaxial relationship between them. The temperature dependent electrical resistivities revealed metallic behavior for all the six compounds. Surprisingly, the electrical resistivity at room temperature decreases with increasing number of interfaces. Hall measurements suggest this results from changes in carrier concentration, which increases with increasing thickness of the thickest SnSe block in the isomer. Carrier mobility scales with the thickness of the thickest NbSe? block due to increased interfacial scattering as the NbSe? blocks become thinner. The observed behavior suggests that the two constituents serve different purposes with respect to electrical transport. SnSe acts as a charge donor and NbSe? acts as the charge transport layer. This separation of function suggests that such heterostructures can be designed to optimize performance through choice of constituent, layer thickness, and layer sequence. A simplistic model, which predicts the properties of the complex isomers from a weighted sum of the properties of

  2. High-Efficiency CdTe and CIGS Thin-Film Solar Cells: Highlights and Challenges; Preprint

    SciTech Connect (OSTI)

    Noufi, R.; Zweibel, K.

    2006-05-01

    Thin-film photovoltaic (PV) modules of CdTe and Cu(In,Ga)Se2 (CIGS) have the potential to reach cost-effective PV-generated electricity. These technologies have transitioned from the laboratory to the market place. Pilot production and first-time manufacturing are ramping up to higher capacity and enjoying a flood of venture-capital funding. CIGS solar cells and modules have achieved 19.5% and 13% efficiencies, respectively. Likewise, CdTe cells and modules have reached 16.5% and 10.2% efficiencies, respectively. Even higher efficiencies from the laboratory and from the manufacturing line are only a matter of time. Manufacturing-line yield continues to improve and is surpassing 85%. Long-term stability has been demonstrated for both technologies; however, some failures in the field have also been observed, emphasizing the critical need for understanding degradation mechanisms and packaging options. The long-term potential of the two technologies require R&D emphasis on science and engineering-based challenges to find solutions to achieve targeted cost-effective module performance, and in-field durability. Some of the challenges are common to both, e.g., in-situ process control and diagnostics, thinner absorber, understanding degradation mechanisms, protection from water vapor, and innovation in high-speed processing and module design. Other topics are specific to the technology, such as lower-cost and fast-deposition processes for CIGS, and improved back contact and voltage for CdTe devices.

  3. Surfactant-Free Synthesis of Bi?Te?-Te Micro-Nano Heterostructure with Enhanced Thermoelectric Figure of Merit

    SciTech Connect (OSTI)

    Zhang, Yichi; Wang, Heng; Kraemer, Stephan; Shi, Yifeng; Zhang, Fan; Snedaker, Matt; Ding, Kunlun; Moskovits, Martin; Snyder, G. Jeffrey; Stucky, Galen D.

    2011-01-01

    An ideal thermoelectric material would be a semiconductor with high electrical conductivity and relatively low thermal conductivity: an electron crystal, phonon glass. Introducing nanoscale heterostructures into the bulk TE matrix is one way of achieving this intuitively anomalous electron/phonon transport behavior. The heterostructured interfaces are expected to play a significant role in phonon scattering to reduce thermal conductivity and in the energy-dependent scattering of electrical carriers to improve the Seebeck coefficient. A nanoparticle building block assembly approach is plausible to fabricate three-dimensional heterostructured materials on a bulk commercial scale. However, a key problem in applying this strategy is the possible negative impact on TE performance of organic residue from the nanoparticle capping ligands. Herein, we report a wet chemical, surfactant-free, low-temperature, and easily up-scalable strategy for the synthesis of nanoscale heterophase Bi?Te?-Te via a galvanic replacement reaction. The micro-nano heterostructured material is fabricated bottom-up, by mixing the heterophase with commercial Bi?Te?. This unique structure shows an enhanced zT value of ~0.4 at room temperature. This heterostructure has one of the highest figures of merit among bismuth telluride systems yet achieved by a wet chemical bottom-up assembly. In addition, it shows a 40% enhancement of the figure of merit over our lab-made material without nanoscale heterostructures. This enhancement is mainly due to the decrease in the thermal conductivity while maintaining the power factor. Overall, this cost-efficient and room-temperature synthesis methodology provides the potential for further improvement and large-scale thermoelectric applications.

  4. EMPaSE: an Extensible Multi-Paradigm Simulation Environment

    Energy Science and Technology Software Center (OSTI)

    2010-08-05

    EMPaSE is a hierarchical, extensible, modular modeling environment for developing and running hybrid simulations of sequential-modular, systems dynamics, discrete-event, and agent-based paradigms. It contains two principle components: a multi-paradigm simulation engine and a graphical user interface. EMPaSE models are defined through a hierarchically-defined set of computational modules that define the simulation logic. Inter-module communication occurs through two complimentary systems: pull-based "ports" for general computation patterns and push-based "plugs" for event processing. Entities (i.e. agents) withinmore » the simulation operate within an abstract multi-network environment. The EMPaSE simulation engine is designed around a flexible plug-in architecture, allowing simulations to import computational modules, engine customizations, and interfaces to external applications from independent plug-in libraries. The EMPaSE GUI environment provides an environment for graphically constructing, executing, and debugging EMPaSE models. As with the simulation engine, the GUI is constructed on top of an extensible architecture that supports rapid customization of the user experience through external plug-in libraries.« less

  5. Electrochemical solar cells using CdSe thin film electrodes

    SciTech Connect (OSTI)

    Xiao, Xu-Rui; Tien, H.Ti.

    1983-01-01

    Electrochemical photocells consisting of a CdSe thin film anode and a Pt cathode immersed in 1M Na/sub 2/S-NaOH-S solution have been studied. CdSe thin films were formed on Ti, Cr, Mo, SnO/sub 2/, glassy carbon, and graphite substrates by coating an aqueous mixture of CdSe, ZnCl/sub 2/, and surfactant, subsequently sintering at 400/sup 0/-500/sup 0/C in air. The current-voltage (I-V) relations, output power efficiency, open-circuit voltage, and short-circuit current were measured. Seven percent power conversion efficiency was obtained at 20 mW/cm/sup 2/ light intensity after photoetching. The monochromatic I-V curves were analyzed.

  6. Friedrich: Order (2014-SE-15010) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Order (2014-SE-15010) Friedrich: Order (2014-SE-15010) October 27, 2015 DOE ordered Friedrich Air Conditioning Co. to pay a civil penalty of $1,494,626.25 after finding Friedrich had manufactured and distributed in commerce in the U.S. 8,241 units of Friedrich model SQ10N10, a noncompliant room air conditioner. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Friedrich. Federal law subjects manufacturers and private labelers to civil penalties if those

  7. Excited-State Relaxation in PbSe Quantum Dots

    SciTech Connect (OSTI)

    An, J. M.; Califano, M.; Franceschetti, A.; Zunger, A.

    2008-01-01

    In solids the phonon-assisted, nonradiative decay from high-energy electronic excited states to low-energy electronic excited states is picosecond fast. It was hoped that electron and hole relaxation could be slowed down in quantum dots, due to the unavailability of phonons energy matched to the large energy-level spacings ('phonon-bottleneck'). However, excited-state relaxation was observed to be rather fast ({le}1 ps) in InP, CdSe, and ZnO dots, and explained by an efficient Auger mechanism, whereby the excess energy of electrons is nonradiatively transferred to holes, which can then rapidly decay by phonon emission, by virtue of the densely spaced valence-band levels. The recent emergence of PbSe as a novel quantum-dot material has rekindled the hope for a slow down of excited-state relaxation because hole relaxation was deemed to be ineffective on account of the widely spaced hole levels. The assumption of sparse hole energy levels in PbSe was based on an effective-mass argument based on the light effective mass of the hole. Surprisingly, fast intraband relaxation times of 1-7 ps were observed in PbSe quantum dots and have been considered contradictory with the Auger cooling mechanism because of the assumed sparsity of the hole energy levels. Our pseudopotential calculations, however, do not support the scenario of sparse hole levels in PbSe: Because of the existence of three valence-band maxima in the bulk PbSe band structure, hole energy levels are densely spaced, in contradiction with simple effective-mass models. The remaining question is whether the Auger decay channel is sufficiently fast to account for the fast intraband relaxation. Using the atomistic pseudopotential wave functions of Pb{sub 2046}Se{sub 2117} and Pb{sub 260}Se{sub 249} quantum dots, we explicitly calculated the electron-hole Coulomb integrals and the P {yields} S electron Auger relaxation rate. We find that the Auger mechanism can explain the experimentally observed P {yields} S

  8. Utility: Order (2016-SE-42003) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    SE-42003) Utility: Order (2016-SE-42003) March 1, 2016 DOE ordered Utility Refrigerator to pay a $200 civil penalty after finding Utility manufactured and distributed in commerce in the U.S. 1 unit of a Utility brand commercial refrigerator, model PT-R-75-SS-3S-3S-N. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Utility. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do

  9. Grain boundary junctions of FeSe0.5Te0.5 thin films on SrTiO3...

    Office of Scientific and Technical Information (OSTI)

    Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA National High Magnetic Field Laboratory, Florida State University,...

  10. Empirical correlations between the arrhenius' parameters of impurities' diffusion coefficients in CdTe crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shcherbak, L.; Kopach, O.; Fochuk, P.; James, R. B.; Bolotnikov, A. E.

    2015-01-21

    Understanding of self- and dopant-diffusion in semiconductor devices is essential to our being able to assure the formation of well-defined doped regions. In this paper, we compare obtained in the literature up to date the Arrhenius’ parameters (D=D0exp(–ΔEa/kT)) of point-defect diffusion coefficients and the I-VII groups impurities in CdTe crystals and films. We found that in the diffusion process there was a linear dependence between the pre-exponential factor, D0, and the activation energy, ΔEa, of different species: This was evident in the self-diffusivity and isovalent impurity Hg diffusivity as well as for the dominant IIIA and IVA groups impurities andmore » Chlorine, except for the fast diffusing elements (e.g., Cu and Ag), chalcogens O, S, and Se, halogens I and Br as well as the transit impurities Mn, Co, Fe. As a result, reasons of the lack of correspondence of the data to compensative dependence are discussed.« less

  11. Empirical correlations between the arrhenius' parameters of impurities' diffusion coefficients in CdTe crystals

    SciTech Connect (OSTI)

    Shcherbak, L.; Kopach, O.; Fochuk, P.; James, R. B.; Bolotnikov, A. E.

    2015-01-21

    Understanding of self- and dopant-diffusion in semiconductor devices is essential to our being able to assure the formation of well-defined doped regions. In this paper, we compare obtained in the literature up to date the Arrhenius’ parameters (D=D0exp(–ΔEa/kT)) of point-defect diffusion coefficients and the I-VII groups impurities in CdTe crystals and films. We found that in the diffusion process there was a linear dependence between the pre-exponential factor, D0, and the activation energy, ΔEa, of different species: This was evident in the self-diffusivity and isovalent impurity Hg diffusivity as well as for the dominant IIIA and IVA groups impurities and Chlorine, except for the fast diffusing elements (e.g., Cu and Ag), chalcogens O, S, and Se, halogens I and Br as well as the transit impurities Mn, Co, Fe. As a result, reasons of the lack of correspondence of the data to compensative dependence are discussed.

  12. Diameter dependent thermoelectric properties of individual SnTe nanowires

    SciTech Connect (OSTI)

    Xu, E. Z.; Li, Z.; Martinez, J. A.; Sinitsyn, N.; Htoon, H.; Li, Nan; Swartzentruber, B.; Hollingsworth, J. A.; Wang, Jian; Zhang, S. X.

    2015-01-15

    The lead-free compound tin telluride (SnTe) has recently been suggested to be a potentially promising thermoelectric material because of its similar electronic band structure as the well-known lead telluride. Here we report on the first thermoelectric study of individual single crystalline SnTe nanowires (NWs) with different diameters ranging from ~200 to ~1000 nm. Measurements of thermopower S, electrical conductivity σ, and thermal conductivity κ were carried out on the same nanowires over a temperature range of 25 - 300 K. While σ does not show a strong diameter dependence, the thermopower increases by a factor of 2 when the nanowire diameter is decreased from 1000 nm to 200 nm. The thermal conductivities of the measured NWs are only about half of that of the bulk SnTe, which may arise from the enhanced phonon-grain boundary and phonon-defect scatterings. Temperature dependent figure-of-merit ZT was determined and the maximum value at room temperature is ~3 times higher than what was obtained in bulk samples of comparable carrier density.

  13. Diameter dependent thermoelectric properties of individual SnTe nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xu, E. Z.; Li, Z.; Martinez, J. A.; Sinitsyn, N.; Htoon, H.; Li, Nan; Swartzentruber, B.; Hollingsworth, J. A.; Wang, Jian; Zhang, S. X.

    2015-01-15

    The lead-free compound tin telluride (SnTe) has recently been suggested to be a potentially promising thermoelectric material because of its similar electronic band structure as the well-known lead telluride. Here we report on the first thermoelectric study of individual single crystalline SnTe nanowires (NWs) with different diameters ranging from ~200 to ~1000 nm. Measurements of thermopower S, electrical conductivity σ, and thermal conductivity κ were carried out on the same nanowires over a temperature range of 25 - 300 K. While σ does not show a strong diameter dependence, the thermopower increases by a factor of 2 when the nanowiremore » diameter is decreased from 1000 nm to 200 nm. The thermal conductivities of the measured NWs are only about half of that of the bulk SnTe, which may arise from the enhanced phonon-grain boundary and phonon-defect scatterings. Temperature dependent figure-of-merit ZT was determined and the maximum value at room temperature is ~3 times higher than what was obtained in bulk samples of comparable carrier density.« less

  14. Quantum oscillations in a two-dimensional electron gas at the rocksalt/zincblende interface of PbTe/CdTe (111) heterostructures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhang, Bingpo; Lu, Ping; Liu, Henan; Jiao, Lin; Ye, Zhenyu; Jaime, M.; Balakirev, F. F.; Yuan, Huiqiu; Wu, Huizhen; Pan, Wei; et al

    2015-06-05

    Quantum oscillations are observed in the 2DEG system at the interface of novel heterostructures, PbTe/CdTe (111), with nearly identical lattice parameters (aPbTe = 0.6462 nm, aCdTe = 0.648 nm) but very different lattice structures (PbTe: rock salt, CdTe: zinc blende). The 2DEG formation mechanism, a mismatch in the bonding configurations of the valence electrons at the interface, is uniquely different from the other known 2DEG systems. The aberration-corrected scanning transmission electron microscope (AC-STEM) characterization indicates an abrupt interface without cation interdiffusion due to a large miscibility gap between the two constituent materials. As a result, electronic transport measurements under magneticmore » field up to 60 T, with the observation of Landau level filling factor ν = 1, unambiguously reveal a π Berry phase, suggesting the Dirac Fermion nature of the 2DEG at the heterostructure interface, and the PbTe/CdTe heterostructure being a new candidate for 2D topological crystalline insulators.« less

  15. Quantum oscillations in a two-dimensional electron gas at the rocksalt/zincblende interface of PbTe/CdTe (111) heterostructures.

    SciTech Connect (OSTI)

    Zhang, Bingpo; Lu, Ping; Liu, Henan; Jiao, Lin; Ye, Zhenyu; Jaime, M.; Balakirev, F. F.; Yuan, Huiqiu; Wu, Huizhen; Pan, Wei; Zhang, Yong

    2015-06-05

    Quantum oscillations are observed in the 2DEG system at the interface of novel heterostructures, PbTe/CdTe (111), with nearly identical lattice parameters (aPbTe = 0.6462 nm, aCdTe = 0.648 nm) but very different lattice structures (PbTe: rock salt, CdTe: zinc blende). The 2DEG formation mechanism, a mismatch in the bonding configurations of the valence electrons at the interface, is uniquely different from the other known 2DEG systems. The aberration-corrected scanning transmission electron microscope (AC-STEM) characterization indicates an abrupt interface without cation interdiffusion due to a large miscibility gap between the two constituent materials. As a result, electronic transport measurements under magnetic field up to 60 T, with the observation of Landau level filling factor ν = 1, unambiguously reveal a π Berry phase, suggesting the Dirac Fermion nature of the 2DEG at the heterostructure interface, and the PbTe/CdTe heterostructure being a new candidate for 2D topological crystalline insulators.

  16. Quantum oscillations in a two-dimensional electron gas at the rocksalt/zincblende interface of PbTe/CdTe (111) heterostructures

    SciTech Connect (OSTI)

    Zhang, Bingpo; Lu, Ping; Liu, Henan; Jiao, Lin; Ye, Zhenyu; Jaime, M.; Balakirev, F. F.; Yuan, Huiqiu; Wu, Huizhen; Pan, Wei; Zhang, Yong

    2015-06-05

    Quantum oscillations are observed in the 2DEG system at the interface of novel heterostructures, PbTe/CdTe (111), with nearly identical lattice parameters (aPbTe = 0.6462 nm, aCdTe = 0.648 nm) but very different lattice structures (PbTe: rock salt, CdTe: zinc blende). The 2DEG formation mechanism, a mismatch in the bonding configurations of the valence electrons at the interface, is uniquely different from the other known 2DEG systems. The aberration-corrected scanning transmission electron microscope (AC-STEM) characterization indicates an abrupt interface without cation interdiffusion due to a large miscibility gap between the two constituent materials. As a result, electronic transport measurements under magnetic field up to 60 T, with the observation of Landau level filling factor ν = 1, unambiguously reveal a π Berry phase, suggesting the Dirac Fermion nature of the 2DEG at the heterostructure interface, and the PbTe/CdTe heterostructure being a new candidate for 2D topological crystalline insulators.

  17. Orbitally-driven giant phonon anharmonicity in SnSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Chen W.; Hong, Jiawang; May, Andrew F.; Bansal, Dipanshu; Chi, Songxue; Hong, Tao; Ehlers, Georg; Delaire, Olivier A.

    2015-10-19

    We understand that elementary excitations and their couplings in condensed matter systems is critical to develop better energy-conversion devices. In thermoelectric materials, the heat-to-electricity conversion efficiency is directly improved by suppressing the propagation of phonon quasiparticles responsible for macroscopic thermal transport. The material with the current record for thermoelectric conversion efficiency, SnSe, achieves an ultra-low thermal conductivity, but the mechanism enabling this strong phonon scattering remains largely unknown. Using inelastic neutron scattering measurements and first-principles simulations, we mapped the four-dimensional phonon dispersion surfaces of SnSe, and revealed the origin of ionic-potential anharmonicity responsible for the unique properties of SnSe. Wemore » show that the giant phonon scattering arises from an unstable electronic structure, with orbital interactions leading to a ferroelectric-like lattice instability. Our results provide a microscopic picture connecting electronic structure and phonon anharmonicity in SnSe, and offers precious insights on how electron-phonon and phononphonon interactions may lead to the realization of ultra-low thermal conductivity.« less

  18. Orbitally-driven giant phonon anharmonicity in SnSe

    SciTech Connect (OSTI)

    Li, Chen W.; Hong, Jiawang; May, Andrew F.; Bansal, Dipanshu; Chi, Songxue; Hong, Tao; Ehlers, Georg; Delaire, Olivier A.

    2015-10-19

    We understand that elementary excitations and their couplings in condensed matter systems is critical to develop better energy-conversion devices. In thermoelectric materials, the heat-to-electricity conversion efficiency is directly improved by suppressing the propagation of phonon quasiparticles responsible for macroscopic thermal transport. The material with the current record for thermoelectric conversion efficiency, SnSe, achieves an ultra-low thermal conductivity, but the mechanism enabling this strong phonon scattering remains largely unknown. Using inelastic neutron scattering measurements and first-principles simulations, we mapped the four-dimensional phonon dispersion surfaces of SnSe, and revealed the origin of ionic-potential anharmonicity responsible for the unique properties of SnSe. We show that the giant phonon scattering arises from an unstable electronic structure, with orbital interactions leading to a ferroelectric-like lattice instability. Our results provide a microscopic picture connecting electronic structure and phonon anharmonicity in SnSe, and offers precious insights on how electron-phonon and phononphonon interactions may lead to the realization of ultra-low thermal conductivity.

  19. Dynamic conductivity of the bulk states of n-type HgTe/CdTe quantum well topological insulator

    SciTech Connect (OSTI)

    Chen, Qinjun; Sanderson, Matthew; Cao, J. C.; Zhang, Chao

    2014-11-17

    We theoretically studied the frequency-dependent current response of the bulk state of topological insulator HgTe/CdTe quantum well. The optical conductivity is mainly due to the inter-band process at high frequencies. At low frequencies, intra-band process dominates with a dramatic drop to near zero before the inter-band contribution takes over. The conductivity decreases with temperature at low temperature and increases with temperature at high temperature. The transport scattering rate has an opposite frequency dependence in the low and high temperature regime. The different frequency dependence is due to the interplay of the carrier-impurity scattering and carrier population near the Fermi surface.

  20. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Guiseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

    2015-02-11

    Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an ordermore » of 102. During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10-5 mbar, we observed the diffusion of Te from the sample, causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10-5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on certain conditions.« less

  1. Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS

    SciTech Connect (OSTI)

    Fei, Ruixiang; Yang, Li; Li, Wenbin; Li, Ju

    2015-10-26

    We predict enormous, anisotropic piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe, and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their piezoelectric coefficients are about one to two orders of magnitude larger than those of other 2D materials, such as MoS{sub 2} and GaSe, and bulk quartz and AlN which are widely used in industry. This enhancement is a result of the unique “puckered” C{sub 2v} symmetry and electronic structure of monolayer group IV monochalcogenides. Given the achieved experimental advances in the fabrication of monolayers, their flexible character, and ability to withstand enormous strain, these 2D structures with giant piezoelectric effects may be promising for a broad range of applications such as nano-sized sensors, piezotronics, and energy harvesting in portable electronic devices.

  2. Charge transfer and mobility enhancement at CdO/SnTe heterointerfaces

    SciTech Connect (OSTI)

    Nishitani, Junichi; Yu, Kin Man; Walukiewicz, Wladek

    2014-09-29

    We report a study of the effects of charge transfer on electrical properties of CdO/SnTe heterostructures. A series of structures with variable SnTe thicknesses were deposited by RF magnetron sputtering. Because of an extreme type III band offset with the valence band edge of SnTe located at 1.5?eV above the conduction band edge of CdO, a large charge transfer is expected at the interface of the CdO/SnTe heterostructure. The electrical properties of the heterostructures are analyzed using a multilayer charge transport model. The analysis indicates a large 4-fold enhancement of the CdO electron mobility at the interface with SnTe. The mobility enhancement is attributed to reduction of the charge center scattering through neutralization of the donor-like defects responsible for the Fermi level pinning at the CdO/SnTe interface.

  3. A W' boson near 2 TeV: Predictions for run 2 of the LHC

    SciTech Connect (OSTI)

    Dobrescu, Bogdan A.; Liu, Zhen

    2015-11-20

    We present a renormalizable theory that includes a W' boson of mass in the 1.8–2 TeV range, which may explain the excess events reported by the ATLAS Collaboration in a WZ final state, and by the CMS Collaboration in e+e jj, Wh0, and jj final states. The W' boson couples to right-handed quarks and leptons, including Dirac neutrinos with TeV-scale masses. This theory predicts a Z' boson of mass in the 3.4–4.5 TeV range. The cross section times branching fractions for the narrow Z' dijet and dilepton peaks at the 13 TeV LHC are 10 and 0.6 fb, respectively, for MZ'=3.4 TeV, and an order of magnitude smaller for MZ'=4.5 TeV.

  4. A W' boson near 2 TeV: Predictions for run 2 of the LHC

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dobrescu, Bogdan A.; Liu, Zhen

    2015-11-20

    We present a renormalizable theory that includes a W' boson of mass in the 1.8–2 TeV range, which may explain the excess events reported by the ATLAS Collaboration in a WZ final state, and by the CMS Collaboration in e+e– jj, Wh0, and jj final states. The W' boson couples to right-handed quarks and leptons, including Dirac neutrinos with TeV-scale masses. This theory predicts a Z' boson of mass in the 3.4–4.5 TeV range. The cross section times branching fractions for the narrow Z' dijet and dilepton peaks at the 13 TeV LHC are 10 and 0.6 fb, respectively, formore » MZ'=3.4 TeV, and an order of magnitude smaller for MZ'=4.5 TeV.« less

  5. The Effect of Structural Vacancies on the Thermoelectric Properties of (Cu2Te)1-x(Ga2Te3)x

    SciTech Connect (OSTI)

    Ye, Zuxin; Cho, Jung Y; Tessema, Misle; Salvador, James R.; Waldo, Richard; Wang, Hsin; Cai, Wei

    2013-01-01

    We have studied the effects of structural vacancies on the thermoelectric properties of the ternary compounds (Cu2Te)1-x(Ga2Te3)x (x = 0.5, 0.55, 0.571, 0.6, 0.625, 0.667 and 0.75), which are solid solutions found in the pseudo-binary phase diagram for Cu2Te and Ga2Te3. This system possesses tunable structural vacancy concentrations. The x= 0.5 phase, CuGaTe2, is nominally devoid of structural vacancies, while the rest of the compounds contain varying amounts of these features, and the volume density of vacancies increases with Ga2Te3 content. The sample with x = 0.5, 0.55, 0.571, 0.6, 0.625 crystallize in the chalcopyrite structure while the x = 0.667 and 0.75 adopt the Ga2Te3 defect zinc blende structure. Strong scattering of heat carrying phonons by structural defects, leads to the reduction of thermal conductivity, which is beneficial to the thermoelectric performance of materials. On the other hand, these defects also scatter charge carriers and reduce the electrical conductivity. All the samples investigated are p-type semiconductors as inferred by the signs of their respective Hall (RH) and Seebeck (S) coefficients. The structural vacancies were found to scatter phonons strongly, while a combination of increased carrier concentration, and vacancies decreases the Hall mobility ( H), degrading the overall thermoelectric performance. The room temperature H drops from 90 cm2/V s for CuGaTe2 to 13 cm2/V s in Cu9Ga11Te21 and 4.6 cm2/V s in CuGa3Te5. The low temperature thermal conductivity decreases significantly with higher Ga2Te3 concentrations (higher vacancy concentration) due to increased point defect scattering which dominate thermal resistance terms. At high temperatures, the dependence of thermal conductivity on the Ga2Te3 content is less significant. The presence of strong Umklapp scattering leads to low thermal conductivity at high temperatures for all samples investigated. The highest ZT among the samples in this study was found for the defect-free CuGaTe

  6. High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011

    SciTech Connect (OSTI)

    Carmody, M.; Gilmore, A.

    2011-05-01

    The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently showed state-of-the-art electron mobilities and good hole mobilities; bulk minority carrier recombination lifetimes of unintentionally p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be consistently of order 100 ns or longer; desired n- and p-doping levels were achieved; solar cell series specific resistances <10 ?-cm2 were achieved; A single-junction solar cell having a state-of-the-art value of Voc and a unverified 16.4% efficiency was fabricated from CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a tandem cell with a Si bottom junction.

  7. Crystal chemistry peculiarities of Cs{sub 2}Te{sub 4}O{sub 12}

    SciTech Connect (OSTI)

    Hamani, David; Mirgorodsky, Andrei; Masson, Olivier; Merle-Mejean, Therese; Colas, Maggy; Smirnov, Mikhael; Thomas, Philippe

    2011-03-15

    The Raman and IR-absorption spectra of the Cs{sub 2}Te{sub 4}O{sub 12} lattice are first recorded and interpreted. Extraordinary features observed in the structure and Raman spectra of Cs{sub 2}Te{sub 4}O{sub 12} are analyzed by using ab initio and lattice-dynamical model calculations. This compound is specified as a caesium-tellurium tellurate Cs{sub 2}Te{sup IV}(Te{sup VI}O{sub 4}){sub 3} in which Te{sup IV} atoms transfer their 5p electrons to [Te{sup VI}O{sub 4}]{sub 3}{sup 6-} tellurate anions, thus fulfilling (jointly with Cs atoms) the role of cations. The Te{sup VI}-O-Te{sup VI} bridge vibration Raman intensity is found abnormally weak, which is reproduced by model treatment including the Cs{sup +} ion polarizability properties in consideration. -- Graphical abstract: Two versions of the BPM estimations of the Raman intensity for the Cs{sub 2}Te{sub 4}O{sub 12} lattice vibrations: (a) without including effects of the Cs-O bonds and (b) including the above mentioned effects. Experimentally observed peaks are characterized by their frequency positions. Display Omitted Research highlights: > Extraordinary features observed in the structure and Raman spectra of Cs{sub 2}Te{sub 4}O{sub 12}. > Ab initio and lattice-dynamical model calculations. > Abnormally weak Raman intensities of the symmetric Te{sup VI}-O-Te{sup VI} bridge. > The monovalent Cs{sup +} cations profoundly influence the polarizability properties.

  8. Epitaxial growth of CZT(S,Se) on silicon

    DOE Patents [OSTI]

    Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

    2016-03-15

    Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

  9. Deformation potentials of CdSe quantum dots

    SciTech Connect (OSTI)

    Li, Jingbo; Wang, Lin-Wang

    2004-06-02

    The size dependent deformation potentials of CdSe quantum dots are studied by first principle and semi-empirical pseudopotentials calculations. They find that the amplitude of the quantum dot deformation potential is only slightly larger than the bulk value, and this increase is mostly caused by the off {Lambda} point deformation potentials in the bulk, which are larger in amplitude than the {Lambda} point deformation potential.

  10. Major UMass User Facilities-Resources-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Major UMass User Facilities TRPL photo Researchers can access the capabilities of the various investigator interested in organic electronic materials, in PHaSE's original participating departments, and other centers and facilities, including the following: Materials Research Science & Engineering Center Center for Hierarchal Manufacturing High Field NMR Facility Mass Spectrometry Facility EPR Facility Keck Nanostructures Laboratory X-ray powder and single crystal diffraction Polymer

  11. Islandaire: Noncompliance Determination (2015-SE-43007) | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy 7) Islandaire: Noncompliance Determination (2015-SE-43007) February 25, 2016 DOE issued a Notice of Noncompliance Determination to Islandaire, Inc. finding that the Islandaire package terminal air conditioner basic model CPZ-09ANR1-B, which includes models EZ4209B and EZDR09B, does not comport with the applicable energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Islandaire must immediately notify each person (or company) to whom it

  12. Islandaire: Noncompliance Determination (2015-SE-43008) | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy 8) Islandaire: Noncompliance Determination (2015-SE-43008) February 25, 2016 DOE issued a Notice of Noncompliance Determination to Islandaire, Inc. finding that the Islandaire package terminal air conditioner basic model CPZ-129ANR1-B, which includes model EZDR12B, does not comport with the applicable energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Islandaire must immediately notify each person (or company) to whom it distributed the

  13. Islandaire: Noncompliance Determination (2015-SE-43009) | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy 9) Islandaire: Noncompliance Determination (2015-SE-43009) February 25, 2016 DOE issued a Notice of Noncompliance Determination to Islandaire, Inc. finding that the Islandaire package terminal air conditioner basic model CPZ-07ANR1-B, which includes model EZDR07B, does not comport with the applicable energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Islandaire must immediately notify each person (or company) to whom it distributed the

  14. Quantum confined acceptors and donors in InSe nanosheets

    SciTech Connect (OSTI)

    Mudd, G. W.; Patan, A. Makarovsky, O.; Eaves, L.; Kudrynskyi, Z. R.; Kovalyuk, Z. D.; Fay, M. W.; Zlyomi, V.; Falko, V.

    2014-12-01

    We report on the radiative recombination of photo-excited carriers bound at native donors and acceptors in exfoliated nanoflakes of nominally undoped rhombohedral ?-polytype InSe. The binding energies of these states are found to increase with the decrease in flake thickness, L. We model their dependence on L using a two-dimensional hydrogenic model for impurities and show that they are strongly sensitive to the position of the impurities within the nanolayer.

  15. American Ref-Fuel of SE CT Biomass Facility | Open Energy Information

    Open Energy Info (EERE)

    Ref-Fuel of SE CT Biomass Facility Jump to: navigation, search Name American Ref-Fuel of SE CT Biomass Facility Facility American Ref-Fuel of SE CT Sector Biomass Facility Type...

  16. SpacePak: Proposed Penalty (2014-SE-16012) | Department of Energy

    Office of Environmental Management (EM)

    SpacePak: Proposed Penalty (2014-SE-16012) (19.1 KB) More Documents & Publications SpacePak: Noncompliance Determination (2014-SE-16012) SpacePak: Order (2014-SE-16012) Crane: ...

  17. Preparation and properties of evaporated CdTe films compared with single crystal CdTe. Progress report No. 2, February 1-April 30, 1981

    SciTech Connect (OSTI)

    Bube, R H

    1981-01-01

    The design, construction and testing of the hot-wall vacuum evaporation system is proceeding on schedule. The vacuum system, a Varian 3118 diffusion pump system, has been installed and tested. A calculation of the optimum possible efficiency for an n-p CdTe homojunction indicates a value of 14%. A complete background is given on the growth of over fifty CdTe single crystals at Stanford, the last four of which were grown as part of this program. Use of crystal regrowth and vibration during growth both increase crystal quality. Higher electrical activity of phosphorus acceptors in CdTe is achieved when 0.1% excess Te is used in place of 0.5% excess Te. Careful characterization of boules grown for this program are underway, using Hall effect or capacitance-voltage data on selected samples. Initial investigation of the properties of grain boundaries in p-type CdTe : P crystals indicates a grain boundary height of 0.44 eV unaffected by illumination. These results suggest that grain boundaries are more strongly pinned in p-type than in n-type CdTe.

  18. PROJECT PROFILE: Interface Science and Engineering for Reliable, High Efficiency CdTe

    Broader source: Energy.gov [DOE]

    While crystalline silicon accounted for two thirds of the PV market in 2014, cadmium telluride (CdTe) photovoltaic (PV) modules are becoming increasingly competitive with continued improvements in efficiency and reduction in price. This project will contribute to enabling 24% efficient CdTe cells by improving surface and interface recombination in the devices. Surface and interface recombination, which is the loss of photo-generated carriers before they are collected, becomes more detrimental to CdTe device performance as carrier lifetime increases. This project will develop effective surface passivation for CdTe and carrier selective contacts for higher efficiency, improved reproducibility, and increased stability.

  19. Nanoscale imaging of photocurrent and efficiency in CdTe solar...

    Office of Scientific and Technical Information (OSTI)

    cells The local collection characteristics of grain interiors and grain boundaries in thin film CdTe polycrystalline solar cells are investigated using scanning photocurrent...

  20. Probing TeV physics in the structure of the neutron (Technical...

    Office of Scientific and Technical Information (OSTI)

    Technical Report: Probing TeV physics in the structure of the neutron Citation Details ... Sponsoring Org: LDRD; USDOE Country of Publication: United States Language: English ...

  1. Characterization and Analysis of CIGS and CdTE Solar Cells: December 2004 - July 2008

    SciTech Connect (OSTI)

    Sites, J. R.

    2009-01-01

    The work reported here embodies a device-physics approach based on careful measurement and interpretation of data from CIGS and CdTe solar cells.

  2. Analysis of Surface Chemistry and Detector Performance of Chemically Process CdZnTe crystals

    SciTech Connect (OSTI)

    HOSSAIN A.; Yang, G.; Sutton, J.; Zergaw, T.; Babalola, O. S.; Bolotnikov, A. E.; Camarda. ZG. S.; Gul, R.; Roy, U. N., and James, R. B.

    2015-10-05

    The goal is to produce non-conductive smooth surfaces for fabricating low-noise and high-efficiency CdZnTe devices.

  3. ON THE ENERGY SPECTRA OF GeV/TeV COSMIC RAY LEPTONS (Journal...

    Office of Scientific and Technical Information (OSTI)

    The models rely on either dark matter annihilationdecay or specific nearby astrophysical ... is the Klein-Nishina suppression of the electron cooling rate around TeV energies. ...

  4. On the Energy Spectra of GeV/TeV Cosmic Ray Leptons (Journal...

    Office of Scientific and Technical Information (OSTI)

    The models rely on either dark matter annihilationdecay or specific nearby astrophysical ... is the Klein-Nishina suppression of the electron cooling rate around TeV energies. ...

  5. Scandium resonant impurity level in PbTe

    SciTech Connect (OSTI)

    Skipetrov, E. P. Skipetrova, L. A.; Knotko, A. V.; Slynko, E. I.; Slynko, V. E.

    2014-04-07

    We synthesize a scandium-doped PbTe single-crystal ingot and investigate the phase and the elemental composition as well as galvanomagnetic properties of Pb{sub 1-y}Sc{sub y}Te alloys in weak magnetic fields (4.2?K???T???300?K, B???0.07?T) upon varying the scandium content (y???0.02). We find that all investigated samples are single-phase and n-type. The distribution of scandium impurities along the axis of the ingot is estimated to be exponential. An increase of scandium impurity content leads to a monotonous growth of the free electron concentration by four orders of magnitude (approximately from 10{sup 16}?cm{sup ?3} to 10{sup 20}?cm{sup ?3}). In heavily doped alloys (y?>?0.01), the free electron concentration at the liquid-helium temperature tends to saturation, indicating the pinning of the Fermi energy by the scandium resonant impurity level located on the background of the conduction band. Using the two-band Kane and six-band Dimmock dispersion relations for IV-VI semiconductors, dependences of the Fermi energy measured from the bottom of the conduction band E{sub c} on the scandium impurity content are calculated and the energy of the resonant scandium level is estimated to be E{sub Sc}???E{sub c}?+?280?meV. Diagrams of electronic structure rearrangement of Pb{sub 1-y}Sc{sub y}Te alloys upon doping are proposed.

  6. Mr. John E. Kieling, Chief Hazardous Was te Bureau

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    John E. Kieling, Chief Hazardous Was te Bureau Depa rtment of Energy Carlsbad Field Office P. O. Box 3090 Carlsbad , New Mexico 88221 NOV 0 5 2013 New Mexico Environment Department 2905 Rodeo Park Drive East. Building 1 Santa Fe, New Mexico 87505-6303 Subject: Panel 6 Closure and Final Waste Emplacement Notifications Dear Mr. Kieling : The purpose of this leiter is 1 0 notify th e New Mexico Environment Department (NMEO) that the Permittees intend to commence closure of Hazardous Waste Disposa

  7. Radiative leptogenesis at the TeV scale

    SciTech Connect (OSTI)

    Choudhury, Debajyoti; Mahajan, Namit; Patra, Sudhanwa; Sarkar, Utpal E-mail: nmahajan@prl.res.in E-mail: utpal@prl.res.in

    2012-04-01

    We construct an explicit model implementing leptogenesis proceeding via the radiative decay of heavy right handed neutrino. In a simple extension of the Standard Model, a discrete symmetry forbids the usual decays of the right-handed neutrinos, while allowing for an effective coupling between the left-handed and right-handed neutrinos through the dipole moment operator. This generates correct leptogenesis with resonant enhancement and also the required neutrino mass via a TeV scale seesaw mechanism. The model is consistent with low energy phenomenology and would have distinct signals in the next generation colliders, and, perhaps even the LHC.

  8. High-Efficiency, Commercial Ready CdTe Solar Cells

    SciTech Connect (OSTI)

    Sites, James R.

    2015-11-19

    Colorado State’s F-PACE project explored several ways to increase the efficiency of CdTe solar cells and to better understand the device physics of those cells under study. Increases in voltage, current, and fill factor resulted in efficiencies above 17%. The three project tasks and additional studies are described in detail in the final report. Most cells studied were fabricated at Colorado State using an industry-compatible single-vacuum closed-space-sublimation (CSS) chamber for deposition of the key semiconductor layers. Additionally, some cells were supplied by First Solar for comparison purposes, and a small number of modules were supplied by Abound Solar.

  9. Pressure-dependent Optical Behaviors of Colloidal CdSe Nanoplatelets...

    Office of Scientific and Technical Information (OSTI)

    dependent Optical Behaviors of Colloidal CdSe Nanoplatelets Citation Details In-Document Search Title: Pressure-dependent Optical Behaviors of Colloidal CdSe Nanoplatelets Authors: ...

  10. Purification of CdZnTe by Electromigration

    SciTech Connect (OSTI)

    Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

    2015-04-14

    Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 lm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. Furthermore, a CZT detector fabricated from the middle portion of the electromigrated CZT boule showed an improved mobility-lifetime product of 0.91 10-2 cm2 /V, compared to that of 1.4 10-3 cm2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.

  11. Extending Higgs inflation with TeV scale new physics

    SciTech Connect (OSTI)

    He, Hong-Jian; Xianyu, Zhong-Zhi

    2014-10-10

    Higgs inflation is among the most economical and predictive inflation models, although the original Higgs inflation requires tuning the Higgs or top mass away from its current experimental value by more than 2σ deviations, and generally gives a negligible tensor-to-scalar ratio r∼10{sup −3} (if away from the vicinity of critical point). In this work, we construct a minimal extension of Higgs inflation, by adding only two new weak-singlet particles at TeV scale, a vector-quark T and a real scalar S . The presence of singlets (T, S) significantly impact the renormalization group running of the Higgs boson self-coupling. With this, our model provides a wider range of the tensor-to-scalar ratio r=O(0.1)−O(10{sup −3}) , consistent with the favored r values by either BICEP2 or Planck data, while keeping the successful prediction of the spectral index n{sub s}≃0.96 . It allows the Higgs and top masses to fully fit the collider measurements. We also discuss implications for searching the predicted TeV-scale vector-quark T and scalar S at the LHC and future high energy pp colliders.

  12. Extending Higgs inflation with TeV scale new physics

    SciTech Connect (OSTI)

    He, Hong-Jian; Xianyu, Zhong-Zhi E-mail: xianyuzhongzhi@gmail.com

    2014-10-01

    Higgs inflation is among the most economical and predictive inflation models, although the original Higgs inflation requires tuning the Higgs or top mass away from its current experimental value by more than 2? deviations, and generally gives a negligible tensor-to-scalar ratio r?10{sup -3} (if away from the vicinity of critical point). In this work, we construct a minimal extension of Higgs inflation, by adding only two new weak-singlet particles at TeV scale, a vector-quark T and a real scalar S. The presence of singlets (T,S) significantly impact the renormalization group running of the Higgs boson self-coupling. With this, our model provides a wider range of the tensor-to-scalar ratio r=O(0.1)-O(10{sup -3}), consistent with the favored r values by either BICEP2 or Planck data, while keeping the successful prediction of the spectral index n{sub s}?0.96. It allows the Higgs and top masses to fully fit the collider measurements. We also discuss implications for searching the predicted TeV-scale vector-quark T and scalar S at the LHC and future high energy pp colliders.

  13. Advanced CdTe Photovoltaic Technology: September 2007 - March 2009

    SciTech Connect (OSTI)

    Barth, K.

    2011-05-01

    During the last eighteen months, Abound Solar (formerly AVA Solar) has enjoyed significant success under the SAI program. During this time, a fully automated manufacturing line has been developed, fabricated and commissioned in Longmont, Colorado. The facility is fully integrated, converting glass and semiconductor materials into complete modules beneath its roof. At capacity, a glass panel will enter the factory every 10 seconds and emerge as a completed module two hours later. This facility is currently undergoing trials in preparation for large volume production of 120 x 60 cm thin film CdTe modules. Preceding the development of the large volume manufacturing capability, Abound Solar demonstrated long duration processing with excellent materials utilization for the manufacture of high efficiency 42 cm square modules. Abound Solar prototype modules have been measured with over 9% aperture area efficiency by NREL. Abound Solar demonstrated the ability to produce modules at industry leading low costs to NREL representatives. Costing models show manufacturing costs below $1/Watt and capital equipment costs below $1.50 per watt of annual manufacturing capacity. Under this SAI program, Abound Solar supported a significant research and development program at Colorado State University. The CSU team continues to make progress on device and materials analysis. Modeling for increased device performance and the effects of processing conditions on properties of CdTe PV were investigated.

  14. Purification of CdZnTe by Electromigration

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

    2015-04-14

    Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 lm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. Furthermore, a CZT detector fabricated from the middle portion of themore » electromigrated CZT boule showed an improved mobility-lifetime product of 0.91 10-2 cm2 /V, compared to that of 1.4 10-3 cm2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.« less

  15. Structural and electrical properties of Si- and Ti-doped Cu{sub 2}SnSe{sub 3} bulks

    SciTech Connect (OSTI)

    Wubet, Walelign; Kuo, Dong-Hau

    2015-07-15

    Silicon-doped (Cu{sub 2}(Sn{sub 1−x}Si{sub x})Se{sub 3} and titanium-doped (Cu{sub 2}(Sn{sub 1−x}Ti{sub x})Se{sub 3} at x=0, 0.05, 0.1, 0.15, and 0.2 were prepared at 550 °C for 2 h with soluble sintering aids of volatile Sb{sub 2}S{sub 3} and Te. Defect chemistry was studied by measuring structural and electrical properties of Si-doped and Ti-doped Cu{sub 2}SnSe{sub 3} (CTSe) as a function of dopant concentration. Si-doped CTSe pellets show p-type at x=0 and 0.05 and n-type at x=0.1, 0.15, and 0.2, whereas Ti-doped CTSe pellets show p-type at x=0, 0.05 and 0.1 and n-type at x=0.15 and 0.2. The lowest hole concentration of 3.6×10{sup 17} cm{sup −3} and the highest mobility of 1525 cm{sup 2} V{sup −1} s{sup −1} were obtained for the Si-doped (Cu{sub 2}(Sn{sub 1−x}Si{sub x})Se{sub 3} bulks at x=0.1 (10% Si), while they were 3.1×10{sup 17} cm{sup −3} and 813 cm{sup 2} V{sup −1} s{sup −1} for the Ti-doped CTSe bulks at x=0.15 (15% Ti), as compared to 1.1×10{sup 18} cm{sup −3} and 209 cm{sup 2} V{sup −1} s{sup −1} for undoped one. The explanations based upon antisite defects of Si-to-Sn, Ti-to-Sn, Cu-to-Sn, and Sn-to-Cu for the changes in electrical property were declared. The study in bulk Si-doped and Ti-doped CTSe is based upon defect state and is consistent and supported by the data of electrical property and lattice parameter. - Graphical abstract: Cu{sub 2}SnSe{sub 3} (CTSe) semiconductor is interesting because of its adjustable electrical properties by extrinsic doping. Si and Ti doping in CTSe leads to high carrier mobility above 800 cm{sup 2} V{sup −1} s{sup −1}. - Highlights: • Cu{sub 2}SnSe{sub 3} (CTSe) is an interesting semiconductor because of its adjustable electrical properties. • Cu(In,Ga)Se{sub 2}, on the contrary, is difficult to change its electrical properties. • Si and Ti doping can change p-CTSe to n-CTSe. • The lowest electron concentration in doped CTSe had the highest mobility above 800 cm{sup 2} V{sup

  16. Bi-Se doped with Cu, p-type semiconductor

    DOE Patents [OSTI]

    Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

    2013-08-20

    A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

  17. Photoconductivity of CdTe Nanocrystal-Based Thin Films. Te2- Ligands Lead To Charge Carrier Diffusion Lengths Over 2 Micrometers

    SciTech Connect (OSTI)

    Crisp, Ryan W.; Callahan, Rebecca; Reid, Obadiah G.; Dolzhnikov, Dmitriy S.; Talapin, Dmitri V.; Rumbles, Garry; Luther, Joseph M.; Kopidakis, Nikos

    2015-11-16

    We report on photoconductivity of films of CdTe nanocrystals (NCs) using time-resolved microwave photoconductivity (TRMC). Spherical and tetrapodal CdTe NCs with tunable size-dependent properties are studied as a function of surface ligand (including inorganic molecular chalcogenide species) and annealing temperature. Relatively high carrier mobility is measured for films of sintered tetrapod NCs (4 cm2/(V s)). Our TRMC findings show that Te2- capped CdTe NCs show a marked improvement in carrier mobility (11 cm2/(V s)), indicating that NC surface termination can be altered to play a crucial role in charge-carrier mobility even after the NC solids are sintered into bulk films.

  18. Thermoelectric properties of Sn- and Pb-doped Tl{sub 9}BiTe{sub 6} and Tl{sub 9}SbTe{sub 6}

    SciTech Connect (OSTI)

    Guo, Quansheng; Chan, Meghan; Kuropatwa, Bryan A.; Kleinke, Holger

    2014-11-14

    A variety of substitutions in Tl{sub 9}BiTe{sub 6} and Tl{sub 9}SbTe{sub 6} with Sn and Pb, amounting to 14 different samples, were performed by melting the stoichiometric amounts of elements at 923 K, followed by slow cooling. The pulverized powders were sintered using the hot-pressing technique. All samples were of single phase according to the powder X-ray diffraction patterns. Thermoelectric property measurements were performed to investigate the effects of Sn- and Pb-doping on the electrical conductivity, Seebeck coefficient, and thermal conductivity. Increasing the concentration of the dopants caused increases in electrical and thermal conductivity, while decreasing the Seebeck coefficient. Tl{sub 9}Bi{sub 0.90}Pb{sub 0.10}Te{sub 6} and Tl{sub 9}Bi{sub 0.85}Pb{sub 0.15}Te{sub 6} exhibited the highest power factor. The changes in lattice thermal conductivity were minor and did not follow a clear trend. Competitive ZT values were obtained for Tl{sub 9}Bi{sub 0.95}Sn{sub 0.05}Te{sub 6}, Tl{sub 9}Bi{sub 0.95}Pb{sub 0.05}Te{sub 6}, Tl{sub 9}Sb{sub 0.97}Sn{sub 0.03}Te{sub 6}, and Tl{sub 9}Sb{sub 0.95}Pb{sub 0.05}Te{sub 6}, namely 0.95, 0.94, 0.83, and 0.71 around 500 K, respectively. Higher dopant concentrations led to lower ZT values.

  19. ZnTeO{sub 3} crystal growth by a modified Bridgman technique

    SciTech Connect (OSTI)

    Nawash, Jalal M. Lynn, Kelvin G.

    2014-12-15

    Highlights: • ZnTeO{sub 3} single crystals were grown for the first time by a modified Bridgman method. • The growth is still possible in a system that lacks congruent melting. • A growth is best when melt is exposed to a steeper axial thermal gradient. • Optical and electrical properties were investigated for the grown crystals. - Abstract: Zinc Tellurite (ZnTeO{sub 3}) crystals were grown for the first time using a modified Bridgman method with a 2.5 kHz radio frequency (RF) furnace. Single crystal growth of ZnTeO{sub 3} was hindered by many complicating factors, such as the evaporation of TeO{sub 2} above 700 °C and the formation of more than one phase during crystal growth. While there were several successful runs that produced ZnTeO{sub 3} single crystals, it was found that large (≥10 cm{sup 3}) single ZnTeO{sub 3} crystals resulted when the crucible was exposed to a steeper vertical thermal gradient and when the temperature of the melt was raised to at least 860 °C. The results of powder X-ray diffraction (XRD) patterns were in accordance with the X-ray powder diffraction file (PDF) for ZnTeO{sub 3}. Some optical, electrical and structural properties of ZnTeO{sub 3} single crystals were reported in this paper.

  20. Phonon anharmonicity and negative thermal expansion in SnSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bansal, Dipanshu; Hong, Jiawang; Li, Chen W.; May, Andrew F.; Porter, Wallace; Hu, Michael Y.; Abernathy, Douglas L.; Delaire, Olivier

    2016-08-09

    In this paper, the anharmonic phonon properties of SnSe in the Pnma phase were investigated with a combination of experiments and first-principles simulations. Using inelastic neutron scattering (INS) and nuclear resonant inelastic X-ray scattering (NRIXS), we have measured the phonon dispersions and density of states (DOS) and their temperature dependence, which revealed a strong, inhomogeneous shift and broadening of the spectrum on warming. First-principles simulations were performed to rationalize these measurements, and to explain the previously reported anisotropic thermal expansion, in particular the negative thermal expansion within the Sn-Se bilayers. Including the anisotropic strain dependence of the phonon free energy,more » in addition to the electronic ground state energy, is essential to reproduce the negative thermal expansion. From the phonon DOS obtained with INS and additional calorimetry measurements, we quantify the harmonic, dilational, and anharmonic components of the phonon entropy, heat capacity, and free energy. Finally, the origin of the anharmonic phonon thermodynamics is linked to the electronic structure.« less

  1. Improving Energy Efficiency by Developing Components for Distributed Cooling and Heating Based on Thermal Comfort Modeling[Thermoelectric (TE) HVAC

    Broader source: Energy.gov [DOE]

    Discusses results from TE HVAC project to add detail to a human thermal comfort model and further allow load reduction in the climate control energy through a distributed TE network

  2. Fabrication and Physics of CdTe Devices by Sputtering: Final Report, 1 March 2005 - 30 November 2008

    SciTech Connect (OSTI)

    Compaan, A.; Collins, R.; Karpov, V.; Giolando, D.

    2009-04-01

    Work to understand CdS/CdTe solar cell device physics; increase magnetron sputtering rate (while keeping high device quality); reduce thickness of CdTe layers (while keeping voltage and fill factor).

  3. Growth of CdTe thin films on graphene by close-spaced sublimation method

    SciTech Connect (OSTI)

    Jung, Younghun; Yang, Gwangseok; Kim, Jihyun, E-mail: hyunhyun7@korea.ac.kr [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of)] [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Chun, Seungju; Kim, Donghwan [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)] [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

    2013-12-02

    CdTe thin films grown on bi-layer graphene were demonstrated by using the close-spaced sublimation method, where CdTe was selectively grown on the graphene. The density of the CdTe domains was increased with increasing the number of the defective sites in the graphene, which was controlled by the duration of UV exposure. The CdTe growth rate on the bi-layer graphene electrodes was 400?nm/min with a bandgap energy of 1.451.49?eV. Scanning electron microscopy, micro-Raman spectroscopy, micro-photoluminescence, and X-ray diffraction technique were used to confirm the high quality of the CdTe thin films grown on the graphene electrodes.

  4. Ba{sub 2}TeO: A new layered oxytelluride

    SciTech Connect (OSTI)

    Besara, T.; Ramirez, D.; Sun, J.; Whalen, J.B.; Tokumoto, T.D.; McGill, S.A.; Singh, D.J.; Siegrist, T.

    2015-02-15

    Single crystals of the new semiconducting oxytelluride phase, Ba{sub 2}TeO, were synthesized from barium oxide powder and elemental tellurium in a molten barium metal flux. Ba{sub 2}TeO crystallizes in tetragonal symmetry with space group P4/nmm (#129), a=5.0337(1) Å, c=9.9437(4) Å, Z=2. The crystals were characterized by single crystal x-ray diffraction, heat capacity and optical measurements. The optical measurements along with electronic band structure calculations indicate semiconductor behavior with a band gap of 2.93 eV. Resistivity measurements show that Ba{sub 2}TeO is highly insulating. - Graphical abstract: Starting from a simple stacking of rocksalt layers, the final structure of Ba{sub 2}TeO can be obtained by accommodation of structural strain via atom displacements. Density of states calculations and optical absorbance measurements show that Ba{sub 2}TeO has a band gap of 2.93 eV, indicative of semiconductor behavior. - Highlights: • Single crystal synthesis of a new layered oxytelluride, Ba{sub 2}TeO. • The structure features inverse PbO-type BaO layers and NaCl-type BaTe layers. • Optical absorbance show Ba{sub 2}TeO to be a semiconductor with a 2.93 eV gap. • Density of states indicate a small hybridization between Te 5p and Ba 5d states. • The BaTe (BaO) layers dominate the heat capacity at low (high) temperatures.

  5. Photoluminescence study of the substitution of Cd by Zn during the growth by atomic layer epitaxy of alternate CdSe and ZnSe monolayers

    SciTech Connect (OSTI)

    Hernndez-Caldern, I.; Salcedo-Reyes, J. C.

    2014-05-15

    We present a study of the substitution of Cd atoms by Zn atoms during the growth of alternate ZnSe and CdSe compound monolayers (ML) by atomic layer epitaxy (ALE) as a function of substrate temperature. Samples contained two quantum wells (QWs), each one made of alternate CdSe and ZnSe monolayers with total thickness of 12 ML but different growth parameters. The QWs were studied by low temperature photoluminescence (PL) spectroscopy. We show that the Cd content of underlying CdSe layers is affected by the exposure of the quantum well film to the Zn flux during the growth of ZnSe monolayers. The amount of Cd of the quantum well film decreases with higher exposures to the Zn flux. A brief discussion about the difficulties to grow the Zn{sub 0.5}Cd{sub 0.5}Se ordered alloy (CuAu-I type) by ALE is presented.

  6. Magnetooptical study of CdSe/ZnMnSe semimagnetic quantum-dot ensembles with n-type modulation doping

    SciTech Connect (OSTI)

    Reshina, I. I. Ivanov, S. V.

    2014-12-15

    Magnetic and polarization investigations of the photoluminescence and resonant electron spin-flip Raman scattering in ensembles of self-organized CdSe/ZnMnSe semimagnetic quantum dots with n-type modulation doping are carried out. It is demonstrated that exciton transitions contribute to the photoluminescence band intensity, along with the transitions of trions in the singlet state. In the Hanle-effect measurements, negative circular polarization in zero magnetic field is observed, which is related to the optical orientation of a trion heavy hole. The lifetime and spin-relaxation time of a heavy hole are estimated as ?3 and ?1 ps, respectively. Such short times are assumed to be due to Auger recombination with the excitation of an intrinsic transition in a Mn{sup 2+} ion. Investigations of the photoluminescence-maximum intensity and shift in a longitudinal magnetic field at the ?{sup ?}?{sup +} and ?{sup ?}?{sup ?} polarizations reveal the pronounced spin polarization of electrons. Under resonant excitation conditions, a sharp increase in the photoluminescence-band maximum intensity at ?{sup ?} excitation polarization over the ?{sup +} one is observed. The Raman scattering peak at the electron spin-flip transition is observed upon resonant excitation in a transverse magnetic field in crossed linear polarizations. This peak is shown to be a Brillouin function of a magnetic field.

  7. Synthesis, structural, optical and Raman studies of pure and lanthanum doped ZnSe nanoparticles

    SciTech Connect (OSTI)

    Kumar, Pushpendra; Singh, Jai; Pandey, Mukesh Kumar; Jeyanthi, C.E.; Siddheswaran, R.; Paulraj, M.; Hui, K.N.; Hui, K.S.

    2014-01-01

    Graphical abstract: - Highlights: • Template-free synthesis of ZnSe and ZnSe:La nanoparticles was developed at low temperature 100 °C. • Cubic ZnSe and ZnSe:La nanoparticles were obtained by chemical route. • As-synthesized ZnSe:La nanoparticles showed higher emission intensity than ZnSe nanoparticles. • Band gap (E{sub g}) of ZnSe nanoparticles was bigger than ZnSe nanoparticles due to nanosized effect. - Abstract: In this work, a simple, effective and reproducible chemical synthetic route for the production of high-quality, pure ZnSe nanoparticles (NPs), and lanthanum-doped ZnSe (ZnSe:La) NPs is presented. The wide bandgap, luminescent pure ZnSe and ZnSe:La NPs has been synthesized at a low temperature (100 °C) in a single template-free step. The size and optical bandgap of the NPs was analyzed from powder X-ray diffraction (XRD), UV–visible (UV–vis) spectroscopy, transmission electron microscopy (TEM), and high resolution transmission electron microscopy (HRTEM). A broad photoluminescence (PL) emission across the visible spectrum has been demonstrated by a systematic blue-shift in emission due to the formation of small nanoparticles. Here, contribution to emission intensity from surface states of NPs increases with La doping. TEM data revealed that the average size of ZnSe and ZnSe:La NPs is 14 and 8 nm, respectively. On the other hand, band gap energy E{sub g} of ZnSe and ZnSe:La NPs were found to be 3.59 eV and 3.65 eV, respectively. Results showed that hydrazine hydrate played multiple roles in the formation of ZnSe and ZnSe:La NPs. A possible reaction mechanism for the growth of NPs is also discussed.

  8. Detection of a MoSe{sub 2} secondary phase layer in CZTSe by spectroscopic ellipsometry

    SciTech Connect (OSTI)

    Demircioğlu, Özden; Riedel, Ingo; Gütay, Levent; Mousel, Marina; Redinger, Alex; Rey, Germain; Weiss, Thomas; Siebentritt, Susanne

    2015-11-14

    We demonstrate the application of Spectroscopic Ellipsometry (SE) for identification of secondary phase MoSe{sub 2} in polycrystalline Cu{sub 2}ZnSnSe{sub 4} (CZTSe) samples. A MoSe{sub 2} reference sample was analyzed, and its optical constants (ε{sub 1} and ε{sub 2}) were extracted by SE analysis. This dataset was implemented into an optical model for analyzing SE data from a glass/Mo/CZTSe sample containing MoSe{sub 2} at the back side of the absorber. We present results on the n and k values of CZTSe and show the extraction of the thickness of the secondary phase MoSe{sub 2} layer. Raman spectroscopy and scanning electron microscopy were applied to confirm the SE results.

  9. The new misfit compound (BiSe){sub 1.15}(TiSe{sub 2}){sub 2} and the role of dimensionality in the Cu{sub x}(BiSe){sub 1+δ}(TiSe{sub 2}){sub n} series

    SciTech Connect (OSTI)

    Trump, Benjamin A.; Livi, Kenneth J.T.; McQueen, Tyrel M.

    2014-01-15

    The synthesis and physical properties of the new misfit compound (BiSe){sub 1.15}(TiSe{sub 2}){sub 2} are reported. Transmission electron microscopy and powder X-ray diffraction show that the structure consists of alternating rock-salt type BiSe layers and hexagonal (TiSe{sub 2}){sub 2} double layers. Resistivity, specific heat, and magnetization measurements show that it has metallic and diamagnetic behaviors. These results are interpreted and discussed in the context of the transition between single-layer (BiSe){sub 1.13}(TiSe{sub 2}), which shows no charge density wave, and infinite-layered (bulk) 1T-TiSe{sub 2}, which undergoes a charge density wave transition at T=202 K. Intercalation with copper, Cu{sub x}(BiSe){sub 1.15}(TiSe{sub 2}){sub 2}, (0≤x≤0.10) is also reported, but unlike Cu{sub x}TiSe{sub 2}, no superconductivity is observed down to T=0.05 K. Thus, the series Cu{sub x}(BiSe){sub 1+δ}(TiSe{sub 2}){sub n} provides an effective approach to elucidate the impact of dimensionality on charge density wave formation and superconductivity. - Graphical abstract: The newly discovered misfit compound (BiSe){sub 1.15}(TiSe{sub 2}){sub 2} shown in the series (BiSe){sub 1+δ}(TiSe{sub 2}){sub n}. Display Omitted - Highlights: • Reports the structure and properties of the new misfit compound (BiSe){sub 1.15}(TiSe{sub 2}){sub 2}. • The structure consists of a rock salt type BiSe layer and a double (TiSe{sub 2}){sub 2} layer. • The n=1, 2 misfits (BiSe){sub 1+δ}(TiSe{sub 2}){sub n} are found not to exhibit CDW transitions. • Evidence is presented that there is likely a low-lying CDW excited state. • The series Cu{sub x}(BiSe){sub 1+δ}(TiSe{sub 2}){sub 2} does not superconduct, unlike Cu{sub x}TiSe{sub 2}.

  10. The effect of structural vacancies on the thermoelectric properties of (Cu?Te){sub 1x}(Ga?Te?)x

    SciTech Connect (OSTI)

    Ye, Zuxin; Young Cho, Jung; Tessema, Misle M.; Salvador, James R.; Waldo, Richard A.; Wang, Hsin; Cai, Wei

    2013-05-01

    We have studied the effects of structural vacancies on the thermoelectric properties of the ternary compounds (Cu?Te)1x(Ga?Te?)x (x=0.5, 0.55, 0.571, 0.6, 0.625, 0.667 and 0.75), which are solid solutions found in the pseudo-binary phase diagram for Cu?Te and Ga?Te?, and possesses tunable structural vacancy concentrations. This materials system is not suitable due to the cost and scarcity of the constituent elements, but the vacancy behavior is well understood and will provide a valuable test case for other systems more suitable from the standpoint of cost and abundance of raw materials, which also possesses these vacancy features, but whose structural characterization is lacking at this stage. We find that the nominally defect free phase CuGaTe? possess the highest ZT (ZT=ST/??, where S is the Seebeck coefficient and ? is the electrical resistivity ? is the thermal conductivity and T is the absolute temperature) which approaches 1 at 840 K and seems to continuously increase above this temperature. This result is due to the unexpectedly low thermal conductivity found for this material at high temperature. The low thermal conductivity was caused by strong Umklapp (thermally resistive scattering processes involving three phonons) phonon scattering. We find that due to the coincidentally strong scattering of carriers by the structural defects that higher concentrations of these features lead to poor electrical transport properties and decreased ZT. - Graphical abstract: Thermal conductivity and zT as a function of temperature for a series of compounds of the type (Cu?Te)1x(Ga?Te?)x (x=0.5, 0.55, 0.571, 0.6, 0.625, 0.667 and 0.75). Highlights: All the samples show p-type semiconducting behavior in the temperature dependence of the Seebeck and Hall coefficients. The increased carrier concentration and the introduction of vacancies diminish the carrier mobility and power factor. The low temperature k decreases significantly as

  11. Evidence for charge Kondo effect in superconducting Tl-doped PbTe (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Evidence for charge Kondo effect in superconducting Tl-doped PbTe Citation Details In-Document Search Title: Evidence for charge Kondo effect in superconducting Tl-doped PbTe We report results of low-temperature thermodynamic and transport measurements of Pb{sub 1-x}Tl{sub x}Te single crystals for Tl concentrations up to the solubility limit of approximately x = 1.5%. For all doped samples, we observe a low-temperature resistivity upturn that scales in magnitude

  12. CdTe portfolio offers commercial ready high efficiency solar - Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovation Portal Find More Like This Return to Search CdTe portfolio offers commercial ready high efficiency solar National Renewable Energy Laboratory Contact NREL About This Technology Publications: PDF Document Publication MktgSummary CdTe.pdf (117 KB) Schematic illustration of a typical CdTe superstrate thin-film PV device. In this design, the layers of the device are deposited onto a glass &quot;superstrate&quot; that allows sunlight to enter. The sunlight passes through the

  13. NuTeV Anomaly Helps Shed Light on Physics of the Nucleus | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NuTeV Anomaly Helps Shed Light on Physics of the Nucleus NuTeV Anomaly Helps Shed Light on Physics of the Nucleus NEWPORT NEWS, VA, June 29, 2009 - A new calculation clarifies the complicated relationship between protons and neutrons in the atomic nucleus and offers a fascinating resolution of the famous NuTeV Anomaly. The calculation, published in the journal Physical Review Letters on June 26, was carried out by a collaboration of researchers from the Department of Energy's Thomas Jefferson

  14. Chapter 1.19: Cadmium Telluride Photovoltaic Thin Film: CdTe

    SciTech Connect (OSTI)

    Gessert, T. A.

    2012-01-01

    The chapter reviews the history, development, and present processes used to fabricate thin-film, CdTe-based photovoltaic (PV) devices. It is intended for readers who are generally familiar with the operation and material aspects of PV devices but desire a deeper understanding of the process sequences used in CdTe PV technology. The discussion identifies why certain processes may have commercial production advantages and how the various process steps can interact with each other to affect device performance and reliability. The chapter concludes with a discussion of considerations of large-area CdTe PV deployment including issues related to material availability and energy-payback time.

  15. Intersubband absorption in CdSe/Zn{sub x}Cd{sub y}Mg{sub 1-x-y}Se self-assembled quantum dot multilayers

    SciTech Connect (OSTI)

    Shen, A.; Lu, H.; Charles, W.; Yokomizo, I.; Tamargo, M. C.; Franz, K. J.; Gmachl, C.; Zhang, S. K.; Zhou, X.; Alfano, R. R.; Liu, H. C.

    2007-02-12

    The authors report the observation of intersubband absorption in multilayers of CdSe/Zn{sub x}Cd{sub y}Mg{sub 1-x-y}Se self-assembled quantum dots. The samples were grown by molecular beam epitaxy on InP substrates. For samples with the CdSe dot layers doped with Cl and with the deposited CdSe equivalent layer thickness between 5.2 and 6.9 ML, peak absorption between 2.5 and 3.5 {mu}m was observed. These materials are promising for intersubband devices operating in the mid- and near-infrared ranges.

  16. SE Gobe: Papua New Guinea`s second oil development

    SciTech Connect (OSTI)

    Langston, M.V.; McCaul, T.R.; Fitzmorris, R.E.

    1994-12-31

    A reservoir development plan was developed from a detailed geological model of the SE Gobe Iagifu reservoir. This model incorporated sequence stratigraphy and extensive core and log analysis to provide the detailed layering framework for reservoir simulation. Cross-sectional balancing techniques were applied to field derived dip and strike, dipmeter log, and RFT data to obtain a structural model for the reservoir. Cross-sectional, sector and, finally, full field reservoir simulation models were constructed and used by the team to generate a reservoir development and management plan. The simulation models were used to examine the relative merits of vertical, deviated and horizontal wells, well placement, offtake rates, gas compression requirements and pressure maintenance strategies. Due to the uncertainty in the size and shape of the field, development options were considered at each of three reserve levels: proven, probable and possible. The simulation results showed that well rates should be held to less than 8,000 stb/d and that horizontal wells, with a length of at least 700 m, generally out-performed vertical wells. Oil recovery ranged between 34 and 45% of OOIP. The cases offering the best recoveries included both water injection and horizontal wells.

  17. Pulsed laser deposition of Mn doped CdSe quantum dots for improved...

    Office of Scientific and Technical Information (OSTI)

    Pulsed laser deposition of Mn doped CdSe quantum dots for improved solar cell performance Citation Details In-Document Search Title: Pulsed laser deposition of Mn doped CdSe ...

  18. Magnetic anisotropy induced by crystal distortion in Ge{sub 1−x}Mn{sub x}Te/PbTe//KCl (001) ferromagnetic semiconductor layers

    SciTech Connect (OSTI)

    Knoff, W. Łusakowski, A.; Domagała, J. Z.; Minikayev, R.; Taliashvili, B.; Łusakowska, E.; Pieniążek, A.; Szczerbakow, A.; Story, T.

    2015-09-21

    Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge{sub 1−x}Mn{sub x}Te with x = 0.14 grown by molecular beam epitaxy on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is controlled by two crystal distortions present in these rhombohedral Ge{sub 1−x}Mn{sub x}Te layers: the ferroelectric distortion with the relative shift of cation and anion sub-lattices along the [111] crystal direction and the biaxial in-plane, compressive strain due to thermal mismatch.

  19. Intrinsic Rashba-like splitting in asymmetric Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} heterogeneous topological insulator films

    SciTech Connect (OSTI)

    Liu, Xiaofei; Guo, Wanlin

    2014-08-25

    We show by density functional theory calculations that asymmetric hetero-stacking of Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} films can modulate the topological surface states. Due to the structure inversion asymmetry, an intrinsic Rashba-like splitting of the conical surface bands is aroused. While such splitting in homogeneous Bi{sub 2}Te{sub 3}-class topological insulators can be realized in films with more than three quintuple layers under external electric fields, the hetero-stacking breaks the limit of thickness for preserving the topological nature into the thinnest two quintuple layers. These results indicate that the hetero-stacking can serve as an efficient strategy for spin-resolved band engineering of topological insulators.

  20. Benefits of Carrier-Pocket Anisotropy to Thermoelectric Performance: The Case of p -Type AgBiSe2

    SciTech Connect (OSTI)

    Parker, David S.; May, Andrew F.; Singh, David J.

    2015-06-05

    Here we study theoretically the effects of anisotropy on the thermoelectric performance of p-type AgBiSe2. We present an apparent realization of the thermoelectric benefits of one-dimensional plate-like carrier pocket anisotropy in the valence band of this material. Based on first principles calculations we find a substantial anisotropy in the electronic structure, likely favorable for thermoelectric performance, in the valence bands of the hexagonal phase of the silver chalcogenide thermoelectric AgBiSe2, while the conduction bands are more isotropic, and in our experiments do not attain high performance. AgBiSe2 has already exhibited a ZT value of 1.5 in a high-temperature disordered fcc phase, but room-temperature performance has not been demonstrated. We develop a theory for the ability of anisotropy to decouple the density-of-states and conductivity effective masses, pointing out the influence of this effect in the high performance thermoelectrics Bi2Te3 and PbTe. From our first principles and Boltzmann transport calculations we find that p-type AgBiSe2 has substantial promise as a room temperature thermoelectric, and estimate its performance.

  1. Giant and tunable valley degeneracy splitting in MoTe 2 (Journal...

    Office of Scientific and Technical Information (OSTI)

    This content will become publicly available on September 7, 2016 Title: Giant and tunable valley degeneracy splitting in MoTe 2 Authors: Qi, Jingshan ; Li, Xiao ; Niu, Qian ; Feng, ...

  2. Ultrathin nanosheets of CrSiTe3. A semiconducting two-dimensional...

    Office of Scientific and Technical Information (OSTI)

    As a result, the ferromagnetic mono- and few-layer 2D CrSiTe3 indicated here should enable ... Type: Accepted Manuscript Journal Name: Journal of Materials Chemistry. C Additional ...

  3. Efficiency, Cost and Weight Trade-off in TE Power Generation System for Vehicle Exhaust Applications

    Broader source: Energy.gov [DOE]

    It contains a detailed co-optimization of the thermoelectric module with the heat sink and a study of the tradeoff between the material cost and efficiency for the TE module and the heat sink. An optimum design is found.

  4. V-183: Cisco TelePresence TC and TE Bugs Let Remote Users Deny...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Remote Users Deny Service and Remote Adjacent Authenticated Users Gain Root Shell Access V-183: Cisco TelePresence TC and TE Bugs Let Remote Users Deny Service and Remote Adjacent...

  5. THE EI'IVIRONMENTAL QUALITY COMPANY CORPCl~V\\TE OFFICE

    Office of Environmental Management (EM)

    EI'IVIRONMENTAL QUALITY COMPANY CORPClVTE OFFICE Ill 36255 MICI*at:l;1 '1 J.VENIJE * WAYNE , IVICHICA148 '184 te800-5925489 tit fax 800-592-5329 February 20, 2013 Yia ...

  6. Structural analysis of Cr aggregation in ferromagnetic semiconductor (Zn,Cr)Te

    SciTech Connect (OSTI)

    Kobayashi, H.; Yamawaki, K.; Nishio, Y.; Kanazawa, K.; Kuroda, S.; Mitome, M.; Bando, Y.

    2013-12-04

    The Cr aggregation in a ferromagnetic semiconductor (Zn,Cr)Te was studied by performing precise analyses using TEM and XRD of microscopic structure of the Cr-aggregated regions formed in iodine-doped Zn{sub 1?x}Cr{sub x}Te films with a relatively high Cr composition x ? 0.2. It was found that the Cr-aggregated regions are composed of Cr{sub 1??}Te nanocrystals of the hexagonal structure and these hexagonal precipitates are stacked preferentially on the (111)A plane of the zinc-blende (ZB) structure of the host ZnTe crystal with its c-axis nearly parallel to the (111){sub ZB} plane.

  7. Thermoelectric Enhancement in PbTe with K or Na codoping from...

    Office of Scientific and Technical Information (OSTI)

    Thermoelectric Enhancement in PbTe with K or Na codoping from tuning the interaction of the light- and heavy-hole valence bands Citation Details In-Document Search Title: ...

  8. A comparison of NNLO QCD predictions with 7 TeV ATLAS and CMS...

    Office of Scientific and Technical Information (OSTI)

    with 7 TeV ATLAS and CMS data for V+jet processes Authors: Boughezal, Radja ; Liu, Xiaohui ; Petriello, Frank Publication Date: 2016-09-01 OSTI Identifier: 1258296 Grant...

  9. Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires

    SciTech Connect (OSTI)

    Guo, Shaojun; Andrew F. Fidler; He, Kai; Su, Dong; Chen, Gen; Lin, Qianglu; Pietryga, Jeffrey M.; Klimov, Victor I.

    2015-11-06

    In this study, the rational design and synthesis of narrow-gap colloidal semiconductor nanocrystals (NCs) is an important step toward the next generation of solution-processable photovoltaics, photodetectors, and thermoelectric devices. SnTe NCs are particularly attractive as a Pb-free alternative to NCs of narrow-gap lead chalcogenides. Previous synthetic efforts on SnTe NCs have focused on spherical nanoparticles. Here we report new strategies for synthesis of SnTe NCs with shapes tunable from highly monodisperse nanocubes, to nanorods (NRs) with variable aspect ratios, and finally to long, straight nanowires (NWs). Reaction at high temperature quickly forms thermodynamically favored nanocubes, but low temperatures lead to elongated particles. Transmission electron microscopy studies of reaction products at various stages of the synthesis reveal that the growth and shape-focusing of monodisperse SnTe nanocubes likely involves interparticle ripening, while directional growth of NRs and NWs may be initiated by particle dimerization via oriented attachment.

  10. Atomic-force microscopy and photoluminescence of nanostructured CdTe

    SciTech Connect (OSTI)

    Babentsov, V.; Sizov, F.; Franc, J.; Luchenko, A.; Svezhentsova, E. Tsybrii, Z.

    2013-09-15

    Low-dimensional CdTe nanorods with a diameter of 10-30 nm and a high aspect ratio that reaches 100 are studied. The nanorods are grown by the physical vapor transport method with the use of Bi precipitates on the substrates. In addition, thin films of closely packed CdTe nanorods with the transverse dimensions {approx}(100-200) nm are grown. Atomic-force microscopy shows that the cross sections of all of the nanorods were hexagonally shaped. By photoluminescence measurements, the inference about the wurtzite structure of CdTe is supported, and the structural quality, electron-phonon coupling, and defects are analyzed. On the basis of recent ab initio calculations, the nature of defects responsible for the formation of deep levels in the CdTe layers and bulk crystals are analyzed.

  11. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials...

    Office of Scientific and Technical Information (OSTI)

    Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials ... Resource Relation: Journal Name: Appl. Phys. Lett.; Journal Volume: 104; Journal Issue: 25 Research ...

  12. Thermal stability and photoconductive properties of photosensors with an alternating multilayer structure of amorphous Se and As{sub x}Se{sub 1−x}

    SciTech Connect (OSTI)

    Yu, Tung-Yuan; Pan, Fu-Ming Chang, Cheng-Yi; Lin, Jian-Siang; Huang, Wen-Hsien

    2015-07-28

    In this study, we fabricated a-Se based photosensors with an alternating multilayer structure of a-Se and As{sub x}Se{sub 1−x} by rotational thermal evaporation deposition. During the deposition of the amorphous As{sub x}Se{sub 1−x} layers, As diffuses into the underlying a-Se component layers, thereby improving the thermal stability of the multilayer photosensor and thus increasing the breakdown electric field. Although the As doping introduces carrier traps in the a-Se layers, the multilayer photosensors demonstrate an effective quantum efficiency comparable to the single-layered a-Se sensor under the blue light illumination but are with a lower dark current density by two orders of magnitude. In addition to the top As{sub x}Se{sub 1−x} layer being functioning as an electron blocking layer, carrier traps present in the multilayer structure may decrease the drift mobility of charge carriers and disturb electric field distribution in the photosensors, thereby suppressing the dark current.

  13. NREL Collaboration Boosts Potential for CdTe Solar Cells - News Releases |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NREL NREL Collaboration Boosts Potential for CdTe Solar Cells February 29, 2016 A critical milestone has been reached in cadmium telluride (CdTe) solar cell technology, helping pave the way for solar energy to directly compete with electricity generated by conventional energy sources. Scientists at the Energy Department's National Renewable Energy Laboratory (NREL) collaborated with researchers at Washington State University and the University of Tennessee to improve the maximum voltage

  14. Deformation and shape transitions in hot rotating neutron deficient Te isotopes

    SciTech Connect (OSTI)

    Aggarwal, Mamta; Mazumdar, I.

    2009-08-15

    Evolution of the nuclear shapes and deformations under the influence of temperature and rotation is investigated in Te isotopes with neutron number ranging from the proton drip line to the stability valley. Spin dependent critical temperatures for the shape transitions in Te nuclei are computed. Shape transitions from prolate at low temperature and spin to oblate via triaxiality are seen with increasing neutron number and spin.

  15. Spin glass in semiconducting KFe1.05Ag0.88Te2 single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ryu, H.; Lei, H.; Klobes, B.; Warren, J. B.; Hermann, R. P.; Petrovic, C.

    2015-05-26

    We report discovery of KFe1.05Ag0.88Te2 single crystals with semiconducting spin glass ground state. Composition and structure analysis suggest nearly stoichiometric I4/mmm space group but allow for the existence of vacancies, absent in long range semiconducting antiferromagnet KFe1.05Ag0.88Te2. The subtle change in stoichometry in Fe/Ag sublattice changes magnetic ground state but not conductivity, giving further insight into the semiconducting gap mechanism.

  16. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Journal Article: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Citation Details In-Document Search Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Authors: Shu, Michael J. ; Zalden, Peter ; Chen, Frank ; Weems, Ben ; Chatzakis, Ioannis ; Xiong, Feng ; Jeyasingh, Rakesh ; Hoffmann, Matthias C. ; Pop, Eric ; Wong, H.-S.Philip ; Wuttig, Matthias ; Lindenberg, Aaron M. Publication Date: 2014-07-08 OSTI

  17. PbTe/TAGS RTG Mars Environmental Survey (MESUR) mission

    SciTech Connect (OSTI)

    Schock, A. )

    1993-01-10

    The paper describes the results of studies on an RTG option for powering the global network of unmanned landers for NASA's Mars Environmental Survey (MESUR) mission. RTGs are essentially unaffected by diurnal and seasonal variations, Martian sandstorms, and landing site latitudes, and their waste heat can stabilize the temperatures of the landers and their payload. The RTG designs described in this paper are based on PbTe/TAGS thermoelectric elements, in contast to the SiGe-based RTGs the author described in previous publications. The presently described RTGs differ not only in the choice of thermoelectric materials but also in the use of much lower operating temperatures, conductive rather than radiative heat transfer, an inert cover gas instead of vacuum in the RTG's converter, and fibrous instead of multifoil thermal insulation. As in a previous Teledyne design, the Fairchild designs described in this paper employ flight-proven General Purpose Source modules and Close-Pack Arrays of thermoelectric converter modules. Illustrative point designs of RTGs producing 41 and 51 watts(e) at 28 volts are presented. The presented performance parameters were derived by detailed thermal, thermoelectric, and electrical analyses (including radiator geometry optimization) described in the paper. The Fairchild study showed that, with appropriate modifications, the Teledyne design can be scaled up to higher power levels, and it identified solutions to ensure adequate fuel clad ductility at launch temperatures and adequate thermal conductance from the thermoelectric cold ends to the RTG housing.

  18. Chiral magnetic effect in ZrTe5

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Q.; Kharzeev, D. E.; Zhang, C.; Huang, Y.; Pletikosic, I.; Fedorov, A. V.; Zhong, R. D.; Schneeloch, J. A.; Gu, G. D.; Valla, T.

    2016-02-08

    The chiral magnetic effect is the generation of electric current induced by chirality imbalance in the presence of magnetic field. It is a macroscopic manifestation of the quantum anomaly in relativistic field theory of chiral fermions (massless spin 1/2 particles with a definite projection of spin on momentum) - a dramatic phenomenon arising from a collective motion of particles and antiparticles in the Dirac sea. The recent discovery of Dirac semimetals with chiral quasi-particles opens a fascinating possibility to study this phenomenon in condensed matter experiments. Here we report on the measurement of magneto-transport in zirconium pentatelluride, ZrTe5 that providesmore » a strong evidence for the chiral magnetic effect. Our angleresolved photoemission spectroscopy experiments show that this material’s electronic structure is consistent with a 3D Dirac semimetal. We observe a large negative magnetoresistance when magnetic field is parallel with the current. The measured quadratic field dependence of the magnetoconductance is a clear indication of the chiral magnetic effect. The observed phenomenon stems from the effective transmutation of Dirac semimetal into a Weyl semimetal induced by the parallel electric and magnetic fields that represent a topologically nontrivial gauge field background. We expect that chiral magnetic effect may emerge in a wide class of materials that are near the transition between the trivial and topological insulators.« less

  19. Ion-beam treatment to prepare surfaces of p-CdTe films

    DOE Patents [OSTI]

    Gessert, Timothy A.

    2001-01-01

    A method of making a low-resistance electrical contact between a p-CdTe layer and outer contact layers by ion beam processing comprising: a) placing a CdS/CdTe device into a chamber and evacuating the chamber; b) orienting the p-CdTe side of the CdS/CdTe layer so that it faces apparatus capable of generating Ar atoms and ions of preferred energy and directionality; c) introducing Ar and igniting the area of apparatus capable of generating Ar atoms and ions of preferred energy and directionality in a manner so that during ion exposure, the source-to-substrate distance is maintained such that it is less than the mean-free path or diffusion length of the Ar atoms and ions at the vacuum pressure; d) allowing exposure of the p-CdTe side of the device to said ion beam for a period less than about 5 minutes; and e) imparting movement to the substrate to control the real uniformity of the ion-beam exposure on the p-CdTe side of the device.

  20. Enhanced thermoelectric performance in Cd doped CuInTe{sub 2} compounds

    SciTech Connect (OSTI)

    Cheng, N.; Liu, R.; Bai, S.; Shi, X. Chen, L.

    2014-04-28

    CuIn{sub 1?x}Cd{sub x}Te{sub 2} materials (x?=?0, 0.02, 0.05, and 0.1) are prepared using melting-annealing method and the highly densified bulk samples are obtained through Spark Plasma Sintering. The X-ray diffraction data confirm that nearly pure chalcopyrite structures are obtained in all the samples. Due to the substitution of Cd at In sites, the carrier concentration is greatly increased, leading to much enhanced electrical conductivity and power factor. The single parabolic band model is used to describe the electrical transport properties of CuInTe{sub 2} and the low temperature Hall mobility is also modeled. By combing theoretical model and experiment data, the optimum carrier concentration in CuInTe{sub 2} is proposed to explain the greatly enhanced power factors in the Cd doped CuInTe{sub 2}. In addition, the thermal conductivity is reduced by extra phonon scattering due to the atomic mass and radius fluctuations between Cd and In atoms. The maximum zTs are observed in CuIn{sub 0.98}Cd{sub 0.02}Te{sub 2} and CuIn{sub 0.9}Cd{sub 0.1}Te{sub 2} samples, which are improved by over 100% at room temperature and around 20% at 600?K.

  1. DEGREE-SCALE GeV 'JETS' FROM ACTIVE AND DEAD TeV BLAZARS

    SciTech Connect (OSTI)

    Neronov, A.; Semikoz, D.; Kachelriess, M.; Ostapchenko, S.; Elyiv, A.

    2010-08-20

    We show that images of TeV blazars in the GeV energy band should contain, along with point-like sources, degree-scale jet-like extensions. These GeV extensions are the result of electromagnetic cascades initiated by TeV {gamma}-rays interacting with extragalactic background light and the deflection of the cascade electrons/positrons in extragalactic magnetic fields (EGMFs). Using Monte Carlo simulations, we study the spectral and timing properties of the degree-scale extensions in simulated GeV band images of TeV blazars. We show that the brightness profile of such degree-scale extensions can be used to infer the light curve of the primary TeV {gamma}-ray source over the past 10{sup 7} yr, i.e., over a time scale comparable to the lifetime of the parent active galactic nucleus. This implies that the degree-scale jet-like GeV emission could be detected not only near known active TeV blazars, but also from 'TeV blazar remnants', whose central engines were switched off up to 10 million years ago. Since the brightness profile of the GeV 'jets' depends on the strength and the structure of the EGMF, their observation provides additional information about the EGMF.

  2. Ultrathin nanosheets of CrSiTe3. A semiconducting two-dimensional ferromagnetic material

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lin, Ming -Wei; Zhung, Houlong L.; Yan, Jiaqiang; Ward, Thomas Zac; Puretzky, Alexander A.; Rouleau, Christopher M.; Gai, Zheng; Liang, Liangbo; Meunier, Vincent; Ganesh, Panchapakesan; et al

    2015-11-27

    Finite range ferromagnetism and antiferromagnetism in two-dimensional (2D) systems within an isotropic Heisenberg model at non-zero temperature were originally proposed to be impossible. However, recent theoretical studies using an Ising model have recently shown that 2D magnetic crystals can exhibit magnetism. Experimental verification of existing 2D magnetic crystals in this system has remained elusive. In this work we for the first time exfoliate the CrSiTe3, a bulk ferromagnetic semiconductor, to mono- and few-layer 2D crystals onto a Si/SiO2 substrate. The Raman spectra show the good stability and high quality of the exfoliated flakes, consistent with the computed phonon spectra ofmore » 2D CrSiTe3, giving a strong evidence for the existence of 2D CrSiTe3 crystals. When the thickness of the CrSiTe3 crystals is reduced to few-layers, we observed a clear change in resistivity at 80~120 K, consistent with the theoretical calculations on the Curie temperature (Tc) of ~80 K for the magnetic ordering of 2D CrSiTe3 crystals. As a result, the ferromagnetic mono- and few-layer 2D CrSiTe3 indicated here should enable numerous applications in nano-spintronics.« less

  3. Oxygen Incorporation During Fabrication of Substrate CdTe Photovoltaic Devices: Preprint

    SciTech Connect (OSTI)

    Duenow, J. N.; Dhere, R. G.; Kuciauskas, D.; Li, J. V.; Pankow, J. W.; DeHart, C. M.; Gessert, T. A.

    2012-06-01

    Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower ({approx}6%-8%) than those of high-performance superstrate devices ({approx}17%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10%.

  4. Enhanced thermoelectric performance in Cu-intercalated BiTeI by compensation weakening induced mobility improvement

    SciTech Connect (OSTI)

    Wu, Lihua; Yang, Jiong; Chi, Miaofang; Wang, Shanyu; Wei, Ping; Zhang, Wenqing; Chen, Lidong; Yang, Jihui

    2015-09-23

    The low weighted carrier mobility has long been considered to be the key challenge for improvement of thermoelectric (TE) performance in BiTeI. The Rashba-effect-induced two-dimensional density of states in this bulk semiconductor is beneficial for thermopower enhancement, which makes it a prospective compound for TE applications. In this report, we show that intercalation of minor Cu-dopants can substantially alter the equilibria of defect reactions, selectively mediate the donor-acceptor compensation, and tune the defect concentration in the carrier conductive network. Consequently, the potential fluctuations responsible for electron scattering are reduced and the carrier mobility in BiTeI can be enhanced by a factor of two to three between 10 K and 300 K. The carrier concentration can also be optimized by tuning the Te/I composition ratio, leading to higher thermopower in this Rashba system. Cu-intercalation in BiTeI gives rise to higher power factor, slightly lower lattice thermal conductivity, and consequently improved figure of merit. Compared with pristine BiTe0.98I1.02, the TE performance in Cu0.05BiTeI reveals a 150% and 20% enhancement at 300 and 520 K, respectively. Ultimately, these results demonstrate that defect equilibria mediated by selective doping in complex TE and energy materials could be an effective approach to carrier mobility and performance optimization.

  5. Enhanced thermoelectric performance in Cu-intercalated BiTeI by compensation weakening induced mobility improvement

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wu, Lihua; Yang, Jiong; Chi, Miaofang; Wang, Shanyu; Wei, Ping; Zhang, Wenqing; Chen, Lidong; Yang, Jihui

    2015-09-23

    The low weighted carrier mobility has long been considered to be the key challenge for improvement of thermoelectric (TE) performance in BiTeI. The Rashba-effect-induced two-dimensional density of states in this bulk semiconductor is beneficial for thermopower enhancement, which makes it a prospective compound for TE applications. In this report, we show that intercalation of minor Cu-dopants can substantially alter the equilibria of defect reactions, selectively mediate the donor-acceptor compensation, and tune the defect concentration in the carrier conductive network. Consequently, the potential fluctuations responsible for electron scattering are reduced and the carrier mobility in BiTeI can be enhanced by amore » factor of two to three between 10 K and 300 K. The carrier concentration can also be optimized by tuning the Te/I composition ratio, leading to higher thermopower in this Rashba system. Cu-intercalation in BiTeI gives rise to higher power factor, slightly lower lattice thermal conductivity, and consequently improved figure of merit. Compared with pristine BiTe0.98I1.02, the TE performance in Cu0.05BiTeI reveals a 150% and 20% enhancement at 300 and 520 K, respectively. Ultimately, these results demonstrate that defect equilibria mediated by selective doping in complex TE and energy materials could be an effective approach to carrier mobility and performance optimization.« less

  6. The US/SE Program Offices' FY 2016 Congressional Budget Request |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy The US/SE Program Offices' FY 2016 Congressional Budget Request The US/SE Program Offices' FY 2016 Congressional Budget Request Figure 2.1: The US/SE Program Offices' FY 2016 Congressional Budget Request (SEP, page 19) Figure 2.1: The US/SE Program Offices' FY 2016 Congressional Budget Request (SEP, page 19) The Under Secretary for Science and Energy (US/SE) program offices lead the Department's engagement in transformative science, technology innovation, and market

  7. Structural characterization of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} as a function of temperature using neutron powder diffraction and extended X-ray absorption fine structure techniques

    SciTech Connect (OSTI)

    Mansour, A. N.; Wong-Ng, W.; Huang, Q.; Tang, W.; Thompson, A.; Sharp, J.

    2014-08-28

    The structure of Bi{sub 2}Te{sub 3} (Seebeck coefficient Standard Reference Material (SRM™ 3451)) and the related phase Sb{sub 2}Te{sub 3} have been characterized as a function of temperature using the neutron powder diffraction (NPD) and the extended X-ray absorption fine structure (EXAFS) techniques. The neutron structural studies were carried out from 20 K to 300 K for Bi{sub 2}Te{sub 3} and from 10 K to 298 K for Sb{sub 2}Te{sub 3}. The EXAFS technique for studying the local structure of the two compounds was conducted from 19 K to 298 K. Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} are isostructural, with a space group of R3{sup ¯}m. The structure consists of repeated quintuple layers of atoms, Te2-M-Te1-M-Te2 (where M = Bi or Sb) stacking along the c-axis of the unit cell. EXAFS was used to examine the bond distances and static and thermal disorders for the first three shells of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} as a function of temperature. The temperature dependencies of thermal disorders were analyzed using the Debye and Einstein models for lattice vibrations. The Debye and Einstein temperatures for the first two shells of Bi{sub 2}Te{sub 3} are similar to those of Sb{sub 2}Te{sub 3} within the uncertainty in the data. However, the Debye and Einstein temperatures for the third shell of Bi-Bi are significantly lower than those of the third shell of Sb-Sb. The Einstein temperature for the third shell is consistent with a soft phonon mode in both Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3}. The lower Einstein temperature of Bi-Bi relative to Sb-Sb is consistent with the lower value of thermal conductivity of Bi{sub 2}Te{sub 3} relative to Sb{sub 2}Te{sub 3}.

  8. Elastic and surface energies: Two key parameters for CdSe quantum dot formation

    SciTech Connect (OSTI)

    Robin, Ivan-Christophe; Andre, Regis; Bougerol, Catherine; Aichele, Thomas; Tatarenko, Serge

    2006-06-05

    The two-dimensional-three-dimensional transition of a strained CdSe layer on (001) ZnSe induced by the use of amorphous selenium is studied. To precisely control the thickness of the CdSe layer, atomic layer epitaxy growth mode is used. Atomic force microscopy and reflection high-energy electron diffraction measurements reveal the formation of CdSe islands when 3 ML (monolayers) of CdSe, corresponding to the critical thickness, are deposited. When only 2.5 ML of CdSe are deposited another relaxation mechanism is observed, leading to the appearance of strong undulations on the surface. For a 3 ML thick CdSe layer, transmission electron microscopy images indicate that the formation of the islands occurs only after the amorphous selenium desorption.

  9. Method of synthesizing and growing copper-indium-diselenide (CuInSe.sub.2) crystals

    DOE Patents [OSTI]

    Ciszek, Theodore F.

    1987-01-01

    A process for preparing CuInSe.sub.2 crystals includes melting a sufficient quantity of B.sub.2 O.sub.3 along with stoichiometric quantities of Cu, In, and Se in a crucible in a high pressure atmosphere of inert gas to encapsulate the CuInSe.sub.2 melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2 percent over the stoichiometric quantity is preferred to make up for small amounts of Se lost in the process. The crystal is grown by inserting a seed crystal through the B.sub.2 O.sub.3 encapsulate into contact with the CuInSe.sub.2 melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.

  10. Method of synthesizing and growing copper-indium-diselenide (CuInSe/sub 2/) crystals

    DOE Patents [OSTI]

    Ciszek, T.F.

    1984-11-29

    A process for preparing CuInSe/sub 2/ crystals includes melting a sufficient quantity of B/sub 2/O/sub 2/ along with stochiometric quantities of Cu, In, and Se in a crucible in a high-pressure atmosphere of inert gas to encapsulate the CuInSe/sub 2/ melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2% over the stochiometric quantity is preferred to make up for small amounts of Se lost in the process. The melt can then be cooled slowly to form the crystal as direct solidification, or the crystal can be grown by inserting a seed crystal through the B/sub 2/O/sub 3/ encapsulate into contact with the CuInSe/sub 2/ melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.

  11. Carrier lifetimes and interface recombination velocities in CdTe/Mg{sub x}Cd{sub 1−x}Te double heterostructures with different Mg compositions grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Liu, Shi; Lassise, Maxwell B.; Zhao, Yuan; Zhang, Yong-Hang; Zhao, Xin-Hao; Campbell, Calli M.

    2015-07-27

    The interface recombination velocities of CdTe/Mg{sub x}Cd{sub 1−x}Te double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest interface recombination velocity of 30 ± 10 cm/s has been measured for the CdTe/Mg{sub 0.46}Cd{sub 0.54}Te interface, and a longest carrier lifetime of 0.83 μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the recombination process in the DHs is also studied.

  12. Disorder-induced anomalously signed Hall effect in crystalline GeTe/Sb{sub 2}Te{sub 3} superlattice-like materials

    SciTech Connect (OSTI)

    Tong, H.; Yu, N. N.; Yang, Z.; Cheng, X. M.; Miao, X. S.

    2015-08-21

    Opposite to the almost persistent p-type conductivity of the crystalline chalcogenides along the GeTe-Sb{sub 2}Te{sub 3} tie line, n-type Hall mobility is observed in crystalline GeTe/Sb{sub 2}Te{sub 3} superlattice-like material (SLL) with a short period length. We suggest that this unusual carrier characteristic originates from the structural disorder introduced by the lattice strain and dangling bonds at the SLL interfaces, which makes the crystalline SLLs behave like the amorphous chalcogenides. Detailed structural disorder in crystalline SLL has been studied by Raman scattering, X-ray photoelectron spectroscopy, as well as Variable-energy positron annihilation spectroscopy measurements. First-principles calculations results show that this structural disorder gives rise to three-site junctions that dominate the charge transport as the period length decreases and result in the anomalously signed Hall effect in the crystalline SLL. Our findings indicate a similar tetrahedral structure in the amorphous and crystalline states of SLLs, which can significantly reduce the entropy difference. Due to the reduced entropy loss and increased resistivity of crystalline phase introduced by disorder, it is not surprising that the SLLs exhibit extremely lower RESET current and power consumption.

  13. The role of oxygen in CdS/CdTe solar cells deposited by close-spaced sublimation

    SciTech Connect (OSTI)

    Rose, D.H.; Levi, D.H.; Matson, R.J.

    1996-05-01

    The presence of oxygen during close-spaced sublimation (CSS) of CdTe has been previously reported to be essential for high-efficiency CdS/CdTe solar cells because it increases the acceptor density in the absorber. The authors find that the presence of oxygen during CSS increases the nucleation site density of CdTe, thus decreasing pinhole density and grain size. Photoluminescence showed that oxygen decreases material quality in the bulk of the CdTe film, but positively impacts the critical CdS/CdTe interface. Through device characterization the authors were unable to verify an increase in acceptor density with increased oxygen. These results, along with the achievement of high-efficiency cells (13% AM1.5) without the use of oxygen, led the authors to conclude that the use of oxygen during CSS deposition of CdTe can be useful but is not essential.

  14. Development of a Total Energy, Environment and Asset Management (TE2AM tm) Curriculum

    SciTech Connect (OSTI)

    2012-12-31

    The University of Wisconsin Department of Engineering Professional Development (EPD) has completed the sponsored project entitled, Development of a Total Energy, Environment and Asset Management (TE2AM™) Curriculum. The project involved the development of a structured professional development program to improve the knowledge, skills, capabilities, and competencies of engineers and operators of commercial buildings. TE2AM™ advances a radically different approach to commercial building design, operation, maintenance, and end-­‐of-­‐life disposition. By employing asset management principles to the lifecycle of a commercial building, owners and occupants will realize improved building performance, reduced energy consumption and positive environmental impacts. Through our commercialization plan, we intend to offer TE2AM™ courses and certificates to the professional community and continuously improve TE2AM™ course materials. The TE2AM™ project supports the DOE Strategic Theme 1 -­‐ Energy Security; and will further advance the DOE Strategic Goal 1.4 Energy Productivity. Through participation in the TE2AM™ curriculum, engineers and operators of commercial buildings will be eligible for a professional certificate; denoting the completion of a prescribed series of learning activities. The project involved a comprehensive, rigorous approach to curriculum development, and accomplished the following goals: 1. Identify, analyze and prioritize key learning needs of engineers, architects and technical professionals as operators of commercial buildings. 2. Design and develop TE2AM™ curricula and instructional strategies to meet learning needs of the target learning community. 3. Establish partnerships with the sponsor and key stakeholders to enhance the development and delivery of learning programs. 4. Successfully commercialize and sustain the training and certificate programs for a substantial time following the term of the award. The project team was

  15. First-epoch VLBA imaging of 20 new TeV blazars

    SciTech Connect (OSTI)

    Piner, B. Glenn; Edwards, Philip G.

    2014-12-10

    We present Very Long Baseline Array (VLBA) images of 20 TeV blazars not previously well studied on the parsec scale. All 20 of these sources are high-frequency peaked BL Lac objects (HBLs). Observations were made between August and December of 2013 at a frequency of 8.4 GHz. These observations represent the first epoch of a VLBA monitoring campaign on these blazars, and they significantly increase the fraction of TeV HBLs studied with high-resolution imaging. The peak very long baseline interferometry (VLBI) flux densities of these sources range from ∼10 to ∼100 mJy bm{sup –1}, and parsec-scale jet structure is detected in all sources. About half of the VLBI cores are resolved, with brightness temperature upper limits of a few times 10{sup 10} K, and we find that a brightness temperature of ∼2 × 10{sup 10} K is consistent with the VLBI data for all but one of the sources. Such brightness temperatures do not require any relativistic beaming to reduce the observed value below commonly invoked intrinsic limits; however, the lack of detection of counterjets does place a modest limit on the bulk Lorentz factor of γ ≳ 2. These data are thus consistent with a picture where weak-jet sources like the TeV HBLs develop significant velocity structures on parsec scales. We also extend consideration to the full sample of TeV HBLs by combining the new VLBI data with VLBI and gamma-ray data from the literature. By comparing measured VLBI and TeV fluxes to samples with intrinsically uncorrelated luminosities generated by Monte Carlo simulations, we find a marginally significant correlation between the VLBI and TeV fluxes for the full TeV HBL sample.

  16. Electrical properties of In{sub 2}Se{sub 3} single crystals and photosensitivity of Al/In{sub 2}Se{sub 3} Schottky barriers

    SciTech Connect (OSTI)

    Bodnar, I. V.; Ilchuk, G. A.; Petrus', R. Yu.; Rud', V. Yu.; Rud', Yu. V.; Serginov, M.

    2009-09-15

    In{sub 2}Se{sub 3} single crystals {approx}40 mm long and 14 mm in diameter were grown by the Bridgman method. The composition of grown single crystals and their crystal structure were determined. The conductivity ({sigma}) and Hall constant (R) of grown single crystals were measured and the first Schottky barriers Al/n-In{sub 2}Se{sub 3} were fabricated. Rectification and photovoltaic effect were detected in the new structures. Based on the study of the photosensitivity spectra of Al/n-In{sub 2}Se{sub 3} structures, the nature of the interband transitions and band gap of In{sub 2}Se{sub 3} crystals were determined. It was concluded that the new structures can be applied to develop broadband photoconverters of optical radiation.

  17. Vibrational properties of epitaxial Bi{sub 4}Te{sub 3} films as studied by Raman spectroscopy

    SciTech Connect (OSTI)

    Xu, Hao; Pan, Wenwu; Chen, Qimiao; Wu, Xiaoyan; Song, Yuxin E-mail: shumin@chalmers.se; Gong, Qian; Lu, Pengfei; Wang, Shumin E-mail: shumin@chalmers.se

    2015-08-15

    Bi{sub 4}Te{sub 3}, as one of the phases of the binary Bi–Te system, shares many similarities with Bi{sub 2}Te{sub 3}, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi{sub 4}Te{sub 3} films on Si substrates prepared by molecular beam epitaxy. Raman spectra of Bi{sub 4}Te{sub 3} films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi{sub 4}Te{sub 3} films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi{sub 4}Te{sub 3} films, it is found that the Raman-active phonon oscillations in Bi{sub 4}Te{sub 3} films exhibit the vibrational properties of those in both Bi and Bi{sub 2}Te{sub 3} films.

  18. Pulsed laser deposition of Mn doped CdSe quantum dots for improved solar cell performance

    SciTech Connect (OSTI)

    Dai, Qilin; Wang, Wenyong E-mail: jtang2@uwyo.edu; Tang, Jinke E-mail: jtang2@uwyo.edu; Sabio, Erwin M.

    2014-05-05

    In this work, we demonstrate (1) a facile method to prepare Mn doped CdSe quantum dots (QDs) on Zn{sub 2}SnO{sub 4} photoanodes by pulsed laser deposition and (2) improved device performance of quantum dot sensitized solar cells of the Mn doped QDs (CdSe:Mn) compared to the undoped QDs (CdSe). The band diagram of photoanode Zn{sub 2}SnO{sub 4} and sensitizer CdSe:Mn QD is proposed based on the incident-photon-to-electron conversion efficiency (IPCE) data. Mn-modified band structure leads to absorption at longer wavelengths than the undoped CdSe QDs, which is due to the exchange splitting of the CdSe:Mn conduction band by the Mn dopant. Three-fold increase in the IPCE efficiency has also been observed for the Mn doped samples.

  19. Static atomic displacements in a CdTe epitaxial layer on a GaAs substrate

    SciTech Connect (OSTI)

    Horning, R.D.; Staudenmann, J.

    1987-05-25

    A (001)CdTe epitaxial layer on a (001)GaAs substrate was studied by x-ray diffraction between 10 and 360 K. The CdTe growth took place at 380 /sup 0/C in a vertical gas flow metalorganic chemical vapor deposition reactor. Lattice parameters and integrated intensities of both the substrate and the epitaxial layer using the (00l) and (hhh) Bragg reflections reveal three important features. Firstly, the GaAs substrate does not exhibit severe strain after deposition and it is as perfect as a bulk GaAs. Secondly, the CdTe unit cell distorts tetragonally with a/sub perpendicular/>a/sub parallel/ below 300 K. The decay of the (00l) reflection intensities as a function of the temperature yields a Debye temperature of 142 K, the same value as for bulk CdTe. Thirdly, a temperature-dependent isotropic static displacement of the Cd and the Te atoms is introduced to account for the anomalous behavior of the (hhh) intensities.

  20. An Experiment to Locate the Site of TeV Flaring in M87

    SciTech Connect (OSTI)

    Harris, D.E.; /Harvard-Smithsonian Ctr. Astrophys.; Massaro, F.; /Harvard-Smithsonian Ctr. Astrophys. /KIPAC, Menlo Park /SLAC; Cheung, C.C.; /Natl. Acad. Sci. /Naval Research Lab, Wash., D.C.; Horns, D.; Raue, M.; /Hamburg U.; Stawarz, L.; /JAXA, Sagamihara /Jagiellonian U., Astron. Observ.; Wagner, S.; /Heidelberg Observ.; Colin, P.; /Munich, Max Planck Inst.; Mazin, D.; /Barcelona, IFAE; Wagner, R.; /Munich, Max Planck Inst.; Beilicke, M.; /McDonnell Ctr. Space Sci.; LeBohec, S.; Hui, M.; /Utah U.; Mukherjee, R.; /Barnard Coll.

    2012-05-18

    We describe a Chandra X-ray target-of-opportunity project designed to isolate the site of TeV flaring in the radio galaxy M87. To date, we have triggered the Chandra observations only once (2010 April) and by the time of the first of our nine observations, the TeV flare had ended. However, we found that the X-ray intensity of the unresolved nucleus was at an elevated level for our first observation. Of the more than 60 Chandra observations we have made of the M87 jet covering nine years, the nucleus was measured at a comparably high level only three times. Two of these occasions can be associated with TeV flaring, and at the time of the third event, there were no TeV monitoring activities. From the rapidity of the intensity drop of the nucleus, we infer that the size of the emitting region is of order a few light days x the unknown beaming factor; comparable to the same sort of estimate for the TeV emitting region. We also find evidence of spectral evolution in the X-ray band which seems consistent with radiative losses affecting the non-thermal population of the emitting electrons within the unresolved nucleus.

  1. Intergalactic magnetic fields and gamma-ray observations of extreme TeV blazars

    SciTech Connect (OSTI)

    Arlen, Timothy C.; Vassilev, Vladimir V.; Weisgarber, Thomas; Wakely, Scott P.; Shafi, S. Yusef

    2014-11-20

    The intergalactic magnetic field (IGMF) in cosmic voids can be indirectly probed through its effect on electromagnetic cascades initiated by a source of teraelectronvolt (TeV) gamma-rays, such as active galactic nuclei (AGNs). AGNs that are sufficiently luminous at TeV energies, 'extreme TeV blazars', can produce detectable levels of secondary radiation from inverse Compton scattering of the electrons in the cascade, provided that the IGMF is not too large. We review recent work in the literature that utilizes this idea to derive constraints on the IGMF for three TeV-detected blazars, 1ES 0229+200, 1ES 1218+304, and RGB J0710+591, and we also investigate four other hard-spectrum TeV blazars in the same framework. Through a recently developed, detailed, three-dimensional particle-tracking Monte Carlo code, incorporating all major effects of QED and cosmological expansion, we research the effects of major uncertainties, such as the spectral properties of the source, uncertainty in the ultraviolet and far-infrared extragalactic background light, undersampled very high energy (energy ≥100 GeV) coverage, past history of gamma-ray emission, source versus observer geometry, and the jet AGN Doppler factor. The implications of these effects on the recently reported lower limits of the IGMF are thoroughly examined to conclude that the presently available data are compatible with a zero-IGMF hypothesis.

  2. Reduction of Fermi level pinning and recombination at polycrystalline CdTe surfaces by laser irradiation

    SciTech Connect (OSTI)

    Simonds, Brian J.; Kheraj, Vipul; Palekis, Vasilios; Ferekides, Christos; Scarpulla, Michael A.

    2015-06-14

    Laser processing of polycrystalline CdTe is a promising approach that could potentially increase module manufacturing throughput while reducing capital expenditure costs. For these benefits to be realized, the basic effects of laser irradiation on CdTe must be ascertained. In this study, we utilize surface photovoltage spectroscopy (SPS) to investigate the changes to the electronic properties of the surface of polycrystalline CdTe solar cell stacks induced by continuous-wave laser annealing. The experimental data explained within a model consisting of two space charge regions, one at the CdTe/air interface and one at the CdTe/CdS junction, are used to interpret our SPS results. The frequency dependence and phase spectra of the SPS signal are also discussed. To support the SPS findings, low-temperature spectrally-resolved photoluminescence and time-resolved photoluminescence were also measured. The data show that a modest laser treatment of 250 W/cm{sup 2} with a dwell time of 20 s is sufficient to reduce the effects of Fermi level pinning at the surface due to surface defects.

  3. PHaSE | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    PHaSE Energy Frontier Research Centers (EFRCs) EFRCs Home Centers EFRC External Websites Research Science Highlights News & Events Publications History Contact BES Home Centers PHaSE Print Text Size: A A A FeedbackShare Page Polymer-Based Materials for Harvesting Solar Energy (PHaSE) Director(s): Thomas P. Russell and Paul M. Lahti Lead Institution: University of Massachusetts, Amherst Years: 2009-2014 Mission: To carry out fundamental photovoltaic-oriented research on the use of

  4. The PHaSE Photovoltaic & Optical Spectroscopy Facility Facility Director: Dr. Volodimyr Duzhko

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ! 32 The PHaSE Photovoltaic & Optical Spectroscopy Facility Facility Director: Dr. Volodimyr Duzhko The central facilities of the DOE-supported Energy Frontier Research Center "Polymer-Based Materials for Harvesting Solar Energy" (PHaSE) are housed in 1305 sq ft of newly renovated space, Rooms B523 and B524 of the Silvio O. Conte National Center for Polymer Research. The renovation was carried out with EFRC PHaSE ARRA funding. These facilities provide the PHaSE members and external

  5. Flow of US/SE Program Funding to National Laboratories (FY 2014 Enacted) |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Flow of US/SE Program Funding to National Laboratories (FY 2014 Enacted) Flow of US/SE Program Funding to National Laboratories (FY 2014 Enacted) Figure 4.2: Flow of US/SE Program Funding to National Laboratories—FY 2014 Enacted (SEP, page 157) Figure 4.2: Flow of US/SE Program Funding to National Laboratories-FY 2014 Enacted (SEP, page 157) This figure illustrates the flow of funding to each of 17 DOE National Laboratories from five of the six Under Secretary for

  6. V-181: Oracle Java SE Critical Patch Update Advisory - June 2013 |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 1: Oracle Java SE Critical Patch Update Advisory - June 2013 V-181: Oracle Java SE Critical Patch Update Advisory - June 2013 June 19, 2013 - 1:06am Addthis PROBLEM: Oracle Java SE Critical Patch Update Advisory - June 2013 PLATFORM: Version(s): 5.0 Update 45, 6 Update 45, 7 Update 21; and prior versions ABSTRACT: Multiple vulnerabilities were reported in Oracle Java. REFERENCE LINKS: Oracle Java SE Critical Patch Update June 2013 SecurityTracker Alert ID: 1028679

  7. A Novel and Functional Single Layer Sheet of ZnSe (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    A Novel and Functional Single Layer Sheet of ZnSe Citation ... In this Communication, we report a novel singlelayer sheet ... Type: Accepted Manuscript Journal Name: ACS Applied ...

  8. SE HAN FINALIZADO LOS PREPARATIVOS PARA LA CONFERENCIA NACIONAL DE JUSTICIA MEDIOAMBIENTAL Y PROGRAMA DE FORMACIÓN 2013

    Broader source: Energy.gov [DOE]

    La National Environmental Justice Conference, Inc. (Conferencia de Justicia Medioambiental) se prepara para otro exitoso acontecimiento, ya que se aproxima la Conferencia Nacional de Justicia...

  9. Systematic study of doping dependence on linear magnetoresistance in p-PbTe

    SciTech Connect (OSTI)

    Schneider, J. M.; Chitta, V. A.; Oliveira, N. F.; Peres, M. L. Castro, S. de; Soares, D. A. W.; Wiedmann, S.; Zeitler, U.; Abramof, E.; Rappl, P. H. O.; Mengui, U. A.

    2014-10-20

    We report on a large linear magnetoresistance effect observed in doped p-PbTe films. While undoped p-PbTe reveals a sublinear magnetoresistance, p-PbTe films doped with BaF{sub 2} exhibit a transition to a nearly perfect linear magnetoresistance behaviour that is persistent up to 30?T. The linear magnetoresistance slope ?R/?B is to a good approximation, independent of temperature. This is in agreement with the theory of Quantum Linear Magnetoresistance. We also performed magnetoresistance simulations using a classical model of linear magnetoresistance. We found that this model fails to explain the experimental data. A systematic study of the doping dependence reveals that the linear magnetoresistance response has a maximum for small BaF{sub 2} doping levels and diminishes rapidly for increasing doping levels. Exploiting the huge impact of doping on the linear magnetoresistance signal could lead to new classes of devices with giant magnetoresistance behavior.

  10. Ba{sub 2}TeO as an optoelectronic material: First-principles study

    SciTech Connect (OSTI)

    Sun, Jifeng; Shi, Hongliang; Du, Mao-Hua; Singh, David J.; Siegrist, Theo

    2015-05-21

    The band structure, optical, and defects properties of Ba{sub 2}TeO are systematically investigated using density functional theory with a view to understanding its potential as an optoelectronic or transparent conducting material. Ba{sub 2}TeO crystallizes with tetragonal structure (space group P4/nmm) and with a 2.93 eV optical bandgap [Besara et al., J. Solid State Chem. 222, 60 (2015)]. We find relatively modest band masses for both electrons and holes suggesting applications. Optical properties show infrared-red absorption when doped. This could potentially be useful for combining wavelength filtering and transparent conducting functions. Furthermore, our defect calculations show that Ba{sub 2}TeO is intrinsically p-type conducting under Ba-poor condition. However, the spontaneous formation of the donor defects may constrain the p-type transport properties and would need to be addressed to enable applications.

  11. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    SciTech Connect (OSTI)

    Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

    2015-09-01

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk. With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.

  12. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

    2015-09-01

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk.more » With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

  13. Effects of Stoichiometry in Undoped CdTe Heteroepilayers on Si

    SciTech Connect (OSTI)

    Gessert, Timothy A.; Colegrove, Eric; Stafford, Brian; Gao, Wei; Sivananthan, Siva; Kuciauskas, Darius; Moutinho, Helio; Farrell, Stuart; Barnes, Teresa

    2015-06-14

    Crystalline CdTe layers have been grown heteroepitaxially onto crystalline Si substrates to establish material parameters needed for advanced photovoltaic (PV) device development and related simulation. These studies suggest that additional availability of the intrinsic anion (i.e., Te) during molecular beam epitaxy deposition can improve structural and optoelectronic quality of the epilayer and the interface between Si substrate and the epilayer. This is seen most notably for thin CdTe epitaxial films (<; ~10 micrometers). Although these observations are foundationally important, they are also relevant to envisioned high-performance multijunction II-VI alloy PV devices-where thin layers will be required to achieve production costs aligned with market constraints.

  14. Ba2TeO as an optoelectronic material: First-principles study

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sun, Jifeng; Shi, Hongliang; Du, Mao-Hua; Siegrist, Theo; Singh, David J.

    2015-05-21

    The band structure, optical and defects properties of Ba2TeO are systematically investigated using density functional theory with a view to understanding its potential as an optoelectronic or transparent conducting material. Ba2TeO crystallizes with tetragonal structure (space group P4/nmm) and with a 2.93 eV optical band gap1. We find relatively modest band masses for both electrons and holes suggesting applications. Optical properties show a infrared-red absorption when doped. This could potentially be useful for combining wavelength filtering and transparent conducting functions. Furthermore, our defect calculations show that Ba2TeO is intrinsically p-type conducting under Ba-poor condition. However, the spontaneous formation of themore » donor defects may constrain the p-type transport properties and would need to be addressed to enable applications.« less

  15. Ba2TeO: A new layered oxytelluride

    SciTech Connect (OSTI)

    Besara, T.; Ramirez, D.; Sun, J.; Whalen, J. B.; Tokumoto, T. D.; McGill, S. A.; Singh, D. J.; Siegrist, T.

    2015-02-01

    For single crystals of the new semiconducting oxytelluride phase, Ba2TeO, we synthesized from barium oxide powder and elemental tellurium in a molten barium metal flux. Ba2TeO crystallizes in tetragonal symmetry with space group P4/nmm (#129), a=5.0337(1) Å, c=9.9437(4) Å, Z=2. The crystals were characterized by single crystal x-ray diffraction, heat capacity and optical measurements. Moreover, the optical measurements along with electronic band structure calculations indicate semiconductor behavior with a band gap of 2.93 eV. Resistivity measurements show that Ba2TeO is highly insulating.

  16. Pair correlations in neutrinoless double {beta} decay candidate {sup 130}Te.

    SciTech Connect (OSTI)

    Bloxham, T.; Kay, B. P.; Schiffer, J. P.; Clark, J. A.; Deibel, C. M.; Freeman, S. J.; Freedman, S. J.; Howard, A. M.; McAllister, S. A.; Parker, P. D.; Sharp, D. K.; Thomas, J. S. (Physics); ( PSC-USR); (LBNL); (Michigan State Univ.); (Univ. of Manchester); (Yale Univ.)

    2010-08-16

    Pair correlations in the ground state of {sup 130}Te have been investigated using pair-transfer experiments to explore the validity of approximations in calculating the matrix element for neutrinoless double-{beta} decay. This nucleus is a candidate for the observation of such decay, and a good understanding of its structure is crucial for eventual calculations of the neutrino mass, should such a decay indeed be observed. For proton-pair adding, strong transitions to excited 0{sup +} states had been observed in the Te isotopes by Alford et al. [Nucl. Phys. A 323, 339 (1979)], indicating a breaking of the BCS approximation for protons in the ground state. We measured the neutron-pair removing (p,t) reaction on {sup 130}Te and found no indication of a corresponding splitting of the BCS nature of the ground state for neutrons.

  17. Pair correlations in the neutrinoless double-{beta} decay candidate {sup 130}Te

    SciTech Connect (OSTI)

    Bloxham, T.; Freedman, S. J. [Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kay, B. P.; Schiffer, J. P.; Clark, J. A. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Deibel, C. M. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Joint Institute for Nuclear Astrophysics, Michigan State University, East Lansing, Michigan 48825 (United States); Freeman, S. J.; Howard, A. M.; McAllister, S. A.; Sharp, D. K.; Thomas, J. S. [Schuster Laboratory, University of Manchester, Manchester, M13 9PL (United Kingdom); Parker, P. D. [A. W. Wright Nuclear Structure Laboratory, Yale University, New Haven, Connecticut 06520 (United States)

    2010-08-15

    Pair correlations in the ground state of {sup 130}Te have been investigated using pair-transfer experiments to explore the validity of approximations in calculating the matrix element for neutrinoless double-{beta} decay. This nucleus is a candidate for the observation of such decay, and a good understanding of its structure is crucial for eventual calculations of the neutrino mass, should such a decay indeed be observed. For proton-pair adding, strong transitions to excited 0{sup +} states had been observed in the Te isotopes by Alford et al. [Nucl. Phys. A 323, 339 (1979)], indicating a breaking of the BCS approximation for protons in the ground state. We measured the neutron-pair removing (p,t) reaction on {sup 130}Te and found no indication of a corresponding splitting of the BCS nature of the ground state for neutrons.

  18. Simulation of Electric Field in Semi Insulating Au/CdTe/Au Detector under Flux

    SciTech Connect (OSTI)

    Franc, J.; James, R.; Grill, R.; Kubat, J.; Belas, E.; Hoschl, P.; Moravec, P.; Praus, P.

    2009-08-02

    We report our simulations on the profile of the electric field in semi insulating CdTe and CdZnTe with Au contacts under radiation flux. The type of the space charge and electric field distribution in the Au/CdTe/Au structure is at high fluxes result of a combined influence of charge formed due to band bending at the electrodes and from photo generated carriers, which are trapped at deep levels. Simultaneous solution of drift-diffusion and Poisson equations is used for the calculation. We show, that the space charge originating from trapped photo-carriers starts to dominate at fluxes 10{sup 15}-10{sup 16}cm{sup -2}s{sup -1}, when the influence of contacts starts to be negligible.

  19. Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2Te3

    SciTech Connect (OSTI)

    Siemons, W.

    2010-02-24

    Three-dimensional topological insulators are a new state of quantum matter with a bulk gap and odd number of relativistic Dirac fermions on the surface. By investigating the surface state of Bi{sub 2}Te{sub 3} with angle-resolved photoemission spectroscopy, we demonstrate that the surface state consists of a single nondegenerate Dirac cone. Furthermore, with appropriate hole doping, the Fermi level can be tuned to intersect only the surface states, indicating a full energy gap for the bulk states. Our results establish that Bi{sub 2}Te{sub 3} is a simple model system for the three-dimensional topological insulator with a single Dirac cone on the surface. The large bulk gap of Bi{sub 2}Te{sub 3} also points to promising potential for high-temperature spintronics applications.

  20. Synthesis, crystal and electronic structure, and physical properties of the new lanthanum copper telluride La{sub 3}Cu{sub 5}Te{sub 7}

    SciTech Connect (OSTI)

    Zelinska, Mariya; Assoud, Abdeljalil [Department of Chemistry, University of Waterloo, Waterloo, ON, Canada N2L 3G1 (Canada); Kleinke, Holger, E-mail: kleinke@uwaterloo.c [Department of Chemistry, University of Waterloo, Waterloo, ON, Canada N2L 3G1 (Canada)

    2011-03-15

    The new lanthanum copper telluride La{sub 3}Cu{sub 5-x}Te{sub 7} has been obtained by annealing the elements at 1073 K. Single-crystal X-ray diffraction studies revealed that the title compound crystallizes in a new structure type, space group Pnma (no. 62) with lattice dimensions of a=8.2326(3) A, b=25.9466(9) A, c=7.3402(3) A, V=1567.9(1) A{sup 3}, Z=4 for La{sub 3}Cu{sub 4.86(4)}Te{sub 7}. The structure of La{sub 3}Cu{sub 5-x}Te{sub 7} is remarkably complex. The Cu and Te atoms build up a three-dimensional covalent network. The coordination polyhedra include trigonal LaTe{sub 6} prisms, capped trigonal LaTe{sub 7} prisms, CuTe{sub 4} tetrahedra, and CuTe{sub 3} pyramids. All Cu sites exhibit deficiencies of various extents. Electrical property measurements on a sintered pellet of La{sub 3}Cu{sub 4.86}Te{sub 7} indicate that it is a p-type semiconductor in accordance with the electronic structure calculations. -- Graphical abstract: Oligomeric unit comprising interconnected CuTe{sub 3} pyramids and CuTe{sub 4} tetrahedra. Display Omitted Research highlights: {yields} La{sub 3}Cu{sub 5-x}Te{sub 7} adopts a new structure type. {yields} All Cu sites exhibit deficiencies of various extents. {yields} The coordination polyhedra include trigonal LaTe{sub 6} prisms, capped trigonal LaTe{sub 7} prisms, CuTe{sub 4} tetrahedra and CuTe{sub 3} pyramids. {yields} La{sub 3}Cu{sub 5-x}Te{sub 7} is a p-type semiconductor.

  1. Thermoelectric study of crossroads material MnTe via sulfur doping

    SciTech Connect (OSTI)

    Xie, Wenjie Populoh, Sascha; Sagarna, Leyre; Trottmann, Matthias; Ga??zka, Krzysztof; Xiao, Xingxing; Liu, Yufei; He, Jian; Weidenkaff, Anke

    2014-03-14

    Here, we report thermoelectric study of crossroads material MnTe via iso-electronic doping S on the Te-site. MnTe{sub 1-x}S{sub x} samples with nominal S content of x?=?0.00, 0.05, and 0.10 were prepared using a melt-quench method followed by pulverization and spark plasma sintering. The X-ray powder diffraction, scanning electron microscopy, and ZAF-corrected compositional analysis confirmed that S uniformly substitutes Te up to slightly over 2%. A higher content of S in the starting materials led to the formation of secondary phases. The thermoelectric properties of MnTe{sub 1-x}S{sub x} samples were characterized by means of Seebeck coefficient, electrical conductivity, and thermal conductivity measurements from 300?K to 773?K. Furthermore, Hall coefficient measurements and a single parabolic band model were used to help gain insights on the effects of S-doping on the scattering mechanism and the carrier effective mass. As expected, S doping not only introduced hole charge carriers but also created short-range defects that effectively scatter heat-carrying phonons at elevated temperatures. On the other hand, we found that S doping degraded the effective mass. As a result, the ZT of MnTe{sub 0.9}S{sub 0.1} was substantially enhanced over the pristine sample near 400?K, while the improvement of ZT became marginal at elevated temperatures. A ZT???0.65 at 773?K was obtained in all three samples.

  2. Multiband Te p Based Superconductivity of Ta4Pd3Te16

    SciTech Connect (OSTI)

    Singh, David J.

    2014-10-06

    We recently discovered that Ta4Pd3Te16 is a superconductor that has been suggested to be an unconventional superconductor near magnetism. Here, we report electronic structure calculations showing that despite the layered crystal structure the material is an anisotropic three-dimensional (3D) metal. The Fermi surface contains prominent one-dimensional (1D) and two-dimensional (2D) features, including nested 1D sheets, a 2D cylindrical section, and a 3D sheet. Moreover, the electronic states that make up the Fermi surface are mostly derived from Te p states with small Ta d and Pd d contributions. This places the compound far from magnetic instabilities. The results are discussed in terms of multiband superconductivity.

  3. Renaissance of the ~1 TeV Fixed-Target Program

    SciTech Connect (OSTI)

    Adams, T.; Appel, Jeffrey A.; Arms, Kregg Elliott; Balantekin, A.B.; Conrad, Janet Marie; Cooper, Peter S.; Djurcic, Zelimir; Dunwoodie, William M.; Engelfried, Jurgen; Fisher, Peter H.; Gottschalk, E.; /Fermilab /Northwestern U.

    2009-05-01

    This document describes the physics potential of a new fixed-target program based on a {approx} TeV proton source. Two proton sources are potentially available in the future: the existing Tevatron at Fermilab, which can provide 800 GeV protons for fixed-target physics, and a possible upgrade to the SPS at CERN, called SPS+, which would produce 1 TeV protons on target. In this paper we use an example Tevatron fixed-target program to illustrate the high discovery potential possible in the charm and neutrino sectors. We highlight examples which are either unique to the program or difficult to accomplish at other venues.

  4. Renaissance of the ~ 1-TeV Fixed-Target Program

    SciTech Connect (OSTI)

    Adams, T.; Appel, J.A.; Arms, K.E.; Balantekin, A.B.; Conrad, J.M.; Cooper, P.S.; Djurcic, Z.; Dunwoodie, W.; Engelfried, J.; Fisher, P.H.; Gottschalk, Erik Edward; de Gouvea, A.; Heller, K.; Ignarra, C.M.; Karagiorgi, G.; Kwan, S.; Loinaz, W.A.; Meadows, B.; Moore, R.; Morfin, J.G.; Naples, D.; /Pittsburgh U. /St. Mary's Coll., Minnesota /New Mexico State U. /Michigan U. /Wayne State U. /South Carolina U. /Florida U. /Carnegie Mellon U. /Cincinnati U. /Columbia U. /Columbia U. /Northwestern U. /Yale U. /Fermilab /Argonne /Northwestern U. /APC, Paris

    2011-12-02

    This document describes the physics potential of a new fixed-target program based on a {approx}1 TeV proton source. Two proton sources are potentially available in the future: the existing Tevatron at Fermilab, which can provide 800 GeV protons for fixed-target physics, and a possible upgrade to the SPS at CERN, called SPS+, which would produce 1 TeV protons on target. In this paper we use an example Tevatron fixed-target program to illustrate the high discovery potential possible in the charm and neutrino sectors. We highlight examples which are either unique to the program or difficult to accomplish at other venues.

  5. Preliminary design for a 20 TeV Collider in a deep tunnel at Fermilab

    SciTech Connect (OSTI)

    Not Available

    1985-01-12

    The Reference Design Study for a 20 TeV Collider demonstrated the technical and cost feasibility of a 20 TeV superconducting collider facility. Based on magnets of 3T, 5T, and 6.5T the Main Ring of the Collider would have a circumference of 164 km, 113 km, or 90 km. There would be six collision regions, of which four would be developed intially. The 5T and 6.5T rings would have twelve major refrigeration stations, while the 3T design would have 24 major refrigeration stations.

  6. Aqueous Synthesis of Zinc Blende CdTe/CdS Magic-Core/Thick-Shell

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Tetrahedral Shaped Nanocrystals with Emission Tunable to Near-Infrared Aqueous Synthesis of Zinc Blende CdTe/CdS Magic-Core/Thick-Shell Tetrahedral Shaped Nanocrystals with Emission Tunable to Near-Infrared Authors: Deng, Z., Schulz, O., Lin, S., Ding, B., Liu, X., Wei, X., Ros, R., Liu, Y., Yan, H., and Francis, M. Title: Aqueous Synthesis of Zinc Blende CdTe/CdS Magic-Core/Thick-Shell Tetrahedral Shaped Nanocrystals with Emission Tunable to Near-Infrared Source: Journal of the American

  7. .sup.123m Te-Labeled biochemicals and method of preparation

    DOE Patents [OSTI]

    Knapp, Jr., Furn F.

    1980-01-01

    A novel class of .sup.123m Te-labeled steroids and amino acids is provided by the method of reacting a .sup.123m Te symmetric diorgano ditelluride with a hydride reducing agent and a source of alkali metal ions to form an alkali metal organo telluride. The alkali metal organo telluride is reacted with a primary halogenated steroidal side chain, amino acid, or amino acid precursor such as hydantoin. The novel compounds are useful as biological tracers and as organal imaging agents.

  8. High efficiency thin film CdTe and a-Si based solar cells

    SciTech Connect (OSTI)

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2000-01-04

    This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and {approximately}9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features and studied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdS{sub x}Te{sub 1{minus}x} films at 10 K and 300 K; collaborated with the National CdTe PV Team on (1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, (2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and (3) preparation of ZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdS{sub x}Te{sub 1{minus}x} alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, and triple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction top cell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure ({approximately}2 {times} 10

  9. Optical Observations of Gamma-Ray Bursts: Connections to GeV/TeV Jets

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Conference: Optical Observations of Gamma-Ray Bursts: Connections to GeV/TeV Jets Citation Details In-Document Search Title: Optical Observations of Gamma-Ray Bursts: Connections to GeV/TeV Jets Authors: Vestrand, W. Thomas [1] + Show Author Affiliations Los Alamos National Laboratory Publication Date: 2013-08-21 OSTI Identifier: 1091318 Report Number(s): LA-UR-13-26624 DOE Contract Number: AC52-06NA25396 Resource Type: Conference Resource Relation: Conference:

  10. Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O

    SciTech Connect (OSTI)

    Felici, Marco; Polimeni, Antonio; Capizzi, Mario; Nabetani, Y.; Okuno, T.; Aoki, K.; Kato, T.; Matsumoto, T.; Hirai, T.

    2006-03-06

    We investigated the optical properties of ZnTe:O/GaAs before and after atomic hydrogen irradiation. Oxygen incorporation gives rise to energy levels associated with single O atoms, O-O pairs, and O clusters, and to a blueshift of the energy gap of the material with respect to that of pure ZnTe/GaAs. All of these effects disappear progressively after irradiation with H, which also leads to an increase in the tensile strain of the epilayer. These observations provide experimental evidence of H-induced passivation of an isoelectronic impurity in II-VI alloys.

  11. Differences in chemical doping matter: Superconductivity in Ti1-xTaxSe2 but not in Ti1-xNbxSe2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Luo, Huixia; Zhu, Yimei; Xie, Weiwei; Tao, Jing; Pletikosic, Ivo; Valla, Tonica; Sahasrabudhe, Girija S.; Osterhoudt, Gavin; Sutton, Eric; Burch, Kenneth S.; et al

    2016-02-21

    We report that 1T-TiSe2, an archetypical layered transition metal dichalcogenide, becomes superconducting when Ta is substituted for Ti but not when Nb is substituted for Ti. This is unexpected because Nb and Ta should be chemically equivalent electron donors. Superconductivity emerges near x = 0.02 for Ti1–xTaxSe2, while, for Ti1–xNbxSe2, no superconducting transitions are observed above 0.4 K. The equivalent chemical nature of the dopants is confirmed by X-ray photoelectron spectroscopy. ARPES and Raman scattering studies show similarities and differences between the two systems, but the fundamental reasons why the Nb and Ta dopants yield such different behavior are unknown.more » We present a comparison of the electronic phase diagrams of many electron-doped 1T-TiSe2 systems, showing that they behave quite differently, which may have broad implications in the search for new superconductors. Here, we propose that superconducting Ti0.8Ta0.2Se2 will be suitable for devices and other studies based on exfoliated crystal flakes.« less

  12. Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers

    SciTech Connect (OSTI)

    Niraula, M.; Yasuda, K.; Wajima, Y.; Yamashita, H.; Tsukamoto, Y.; Suzuki, Y.; Matsumoto, M.; Takai, N.; Tsukamoto, Y.; Agata, Y.

    2013-10-28

    Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors, fabricated by growing p-and n-type CdTe epilayers on (211) n{sup +}-Si substrates using metalorganic vapor-phase epitaxy (MOVPE), were studied by analyzing current-voltage characteristics measured at various temperatures. The diode fabricated shows good rectification properties, however, both forward and reverse biased currents deviate from their ideal behavior. The forward current exhibits typical feature of multi-step tunneling at lower biases; however, becomes space charge limited type when the bias is increased. On the other hand, the reverse current exhibits thermally activated tunneling-type current. It was found that trapping centers at the p-CdTe/n-CdTe junction, which were formed due to the growth induced defects, determine the currents of this diode, and hence limit the performance of the nuclear radiation detectors developed.

  13. Development of a Low Cost Insulated Foil Substrate for Cu(InGaSe)2 Photovoltaics

    SciTech Connect (OSTI)

    ERTEN ESER

    2012-01-22

    The project validated the use of stainless steel flexible substrate coated with silicone-based resin dielectric, developed by Dow Corning Corporation, for Cu(InGa)Se2 based photovoltaics. The projects driving force was the high performance of Cu(InGa)Se2 based photovoltaics coupled with potential cost reduction that could be achieved with dielectric coated SS web substrate.

  14. Ligand-Mediated Modification of the Electronic Structure of CdSe Quantum Dots

    SciTech Connect (OSTI)

    Lee, Jonathan R.; Whitley, Heather D.; Meulenberg, Robert W.; Wolcott, Abraham; Zhang, Jin Z.; Prendergast, Peter; Lovingood, Derek D.; Strouse, Geoffrey F.; Ogitsu, Tadashi; Schwegler, Eric; Terminello, Louis J.; Van Buuren, Tony W.

    2012-05-18

    X-ray absorption spectroscopy and ab initio modeling of the experimental spectra have been used to investigate the effects of surface passivation on the unoccupied electronic states of CdSe quantum dots (QDs). Significant differences are observed in the unoccupied electronic structure of the CdSe QDs, which are shown to arise from variations in specific ligand-surface bonding interactions.

  15. Study of W boson production in pPb collisions at sNN=5.02 TeV...

    Office of Scientific and Technical Information (OSTI)

    Study of W boson production in pPb collisions at sNN5.02 TeV Citation Details In-Document Search Title: Study of W boson production in pPb collisions at sNN5.02 TeV Publication...

  16. Sonochemical and hydrothermal synthesis of PbTe nanostructures with the aid of a novel capping agent

    SciTech Connect (OSTI)

    Fard-Fini, Shahla Ahmadian; Salavati-Niasari, Masoud; Mohandes, Fatemeh

    2013-10-15

    Graphical abstract: - Highlights: • PbTe nanostructures were prepared with the aid of Schiff-base compound. • Sonochemical and hydrothermal methods were employed to fabricate PbTe nanostrucrues. • The effect of preparation parameters on the morphology of PbTe was investigated. - Abstract: In this work, a new Schiff-base compound derived from 1,8-diamino-3,6-dioxaoctane and 2-hydroxy-1-naphthaldehyde marked as (2-HyNa)-(DaDo) was synthesized, characterized, and then used as capping agent for the preparation of PbTe nanostructures. To fabricate PbTe nanostructures, two different synthesis methods; hydrothermal and sonochemical routes, were applied. To further investigate, the effect of preparation parameters like reaction time and temperature in hydrothermal synthesis and sonication time in the presence of ultrasound irradiation on the morphology and purity of the final products was tested. The products were analyzed with the aid of SEM, TEM, XRD, FT-IR, and EDS. Based on the obtained results, it was found that pure cubic phased PbTe nanostructures have been obtained by hydrothermal and sonochemical approaches. Besides, SEM images showed that cubic-like and rod-like PbTe nanostructures have been formed by hydrothermal and sonochemical methods, respectively. Sonochemical synthesis of PbTe nanostructures was favorable, because the synthesis time of sonochemical method was shorter than that of hydrothermal method.

  17. Cadmium sulfate and CdTe-quantum dots alter DNA repair in zebrafish (Danio rerio) liver cells

    SciTech Connect (OSTI)

    Tang, Song; Cai, Qingsong; Chibli, Hicham; Allagadda, Vinay; Nadeau, Jay L.; Mayer, Gregory D.

    2013-10-15

    Increasing use of quantum dots (QDs) makes it necessary to evaluate their toxicological impacts on aquatic organisms, since their contamination of surface water is inevitable. This study compares the genotoxic effects of ionic Cd versus CdTe nanocrystals in zebrafish hepatocytes. After 24 h of CdSO{sub 4} or CdTe QD exposure, zebrafish liver (ZFL) cells showed a decreased number of viable cells, an accumulation of Cd, an increased formation of reactive oxygen species (ROS), and an induction of DNA strand breaks. Measured levels of stress defense and DNA repair genes were elevated in both cases. However, removal of bulky DNA adducts by nucleotide excision repair (NER) was inhibited with CdSO{sub 4} but not with CdTe QDs. The adverse effects caused by acute exposure of CdTe QDs might be mediated through differing mechanisms than those resulting from ionic cadmium toxicity, and studying the effects of metallic components may be not enough to explain QD toxicities in aquatic organisms. - Highlights: Both CdSO{sub 4} and CdTe QDs lead to cell death and Cd accumulation. Both CdSO{sub 4} and CdTe QDs induce cellular ROS generation and DNA strand breaks. Both CdSO{sub 4} and CdTe QDs induce the expressions of stress defense and DNA repair genes. NER repair capacity was inhibited with CdSO{sub 4} but not with CdTe QDs.

  18. Surface Plasmon Excitation via Au Nanoparticles in CdSe Semiconductor

    SciTech Connect (OSTI)

    Pradhan, A. K.; Konda, R. B.; Mundle, R.; Mustafa, H.; Bamiduro, O.; Roy, U. N.; Cui, Y.; Burger, A.

    2008-10-23

    We present experimental evidence for the large Raman and photoluminescence enhancement in CdSe semiconductor films grown on Si and glass substrates due to excitation of surface plasmon resonances in proximate gold metal nanoparticles deposited on the surface of CdSe film. Heterojunction diodes containing n-CdSe on p-Si semiconductor were fabricated and the surface of the diodes was in situ coated with Au nanoparticles using the ultra-high vacuum pulsed-laser deposition technique. A significant enhancement of the photocurrent was obtained in CdSe/p-Si containing Au nanoparticles on the surface compared to CdSe/p-Si due to the enhanced photo-absorption within the semiconductor by the phenomenon of surface plasmon resonance. These observations suggest a variety of approaches for improving the performance of devices such as photodetectors, photovoltaic, and related devices, including biosensors.

  19. Glass formation and the third harmonic generation of Cu{sub 2}Se–GeSe{sub 2}–As{sub 2}Se{sub 3} glasses

    SciTech Connect (OSTI)

    Reshak, A. H.; Klymovych, O. S.; Zmiy, O. F.; Myronchuk, G. L.; Zamuruyeva, O. V.; Alahmed, Z. A.; Chyský, J.; Bila, Jiri; Kamarudin, H.

    2014-10-14

    We have performed the investigation of the nonlinear optical properties namely the third harmonic generation (THG) of the glass-formation region in the Cu{sub 2}Se–GeSe{sub 2}–As{sub 2}Se{sub 3} system. The samples were synthesized by direct single-temperature method from high-purity elementary substances. We have found that the value of disorder parameter Δ depends on the composition of the glassy alloys. The measurements show that increasing the Cu{sub 2}Se concentration leads to increased slope of the absorption edge, which may be explained by the decrease of the height of random potential relief for the electrons in the tails of the state density which border the band edges. A very sharp increase in the THG at low temperature was observed. Significant enhancement in THG was obtained with decreasing the energy gap, which agreed well with the nonlinear optical susceptibilities obtained from other glasses.

  20. Effect of hydrostatic pressure and uniaxial strain on the electronic structure of Pb1-xSnxTe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Geilhufe, Matthias; Nayak, Sanjeev K.; Thomas, Stefan; Dane, Markus; Tripathi, Gouri S.; Entel, Peter; Hergert, Wolfram; Ernst, Arthur

    2015-12-09

    The electronic structure of Pb1–xSnxTe is studied by using the relativistic Korringa-Kohn-Rostoker Green function method in the framework of density functional theory. For all concentrations x, Pb1–xSnxTe is a direct semiconductor with a narrow band gap. In contrast to pure lead telluride, tin telluride shows an inverted band characteristic close to the Fermi energy. It will be shown that this particular property can be tuned, first, by alloying PbTe and SnTe and, second, by applying hydrostatic pressure or uniaxial strain. Furthermore, the magnitude of strain needed to switch between the regular and inverted band gap can be tuned by themore » alloy composition. In conclusion, there is a range of potential usage of Pb1–xSnxTe for spintronic applications.« less

  1. Inherent room temperature ferromagnetism and dopant dependent Raman studies of PbSe, Pb{sub 1−x}Cu{sub x}Se, and Pb{sub 1−x}Ni{sub x}Se

    SciTech Connect (OSTI)

    Gayner, Chhatrasal; Kar, Kamal K.

    2015-03-14

    Polycrystalline lead selenide (PbSe) doped with copper (Cu) and nickel (Ni) was prepared to understand its magnetic behaviour and Raman activity. The processing conditions, influence of dopants (magnetically active and non-active) and their respective compositions on the magnetic properties and Raman active mode were studied. A surprising/anomalous room temperature ferromagnetism (hysteresis loop) is noticed in bulk diamagnetic PbSe, which is found to be natural or inherent characteristic of material, and depends on the crystallite size, dopant, and developed strain due to dopant/defects. The magnetic susceptibility (−1.71 × 10{sup −4} emu/mol Oe) and saturated magnetic susceptibility (−2.74 × 10{sup −4} emu/mol Oe) are found to be higher than the earlier reported value (diamagnetic: −1.0 × 10{sup −4} emu/mol Oe) in bulk PbSe. With increase of Cu concentration (2% to 10%) in PbSe, the saturated magnetic susceptibility decreases from −1.22 × 10{sup −4} to −0.85 × 10{sup −4} emu/mol Oe. Whereas for Ni dopant, the saturated magnetic susceptibility increases to −2.96 × 10{sup −4} emu/mol Oe at 2% Ni doped PbSe. But it further decreases with dopant concentration. In these doped PbSe, the shifting of longitudinal (LO) phonon mode was also studied by the Raman spectroscopy. The shifting of LO mode is found to be dopant dependent, and the frequency shift of LO mode is associated with the induced strain that created by the dopants and vacancies. This asymmetry in LO phonon mode (peak shift and shape) may be due to the intraband electronic transition of dopants. The variation in magnetic susceptibility and Raman shifts are sensitive to crystallite size, nature of dopant, concentration of dopants, and induced strain due to dopants.

  2. Nanowire CdS-CdTe solar cells with molybdenum oxide as contact

    SciTech Connect (OSTI)

    Dang, Hongmei; Singh, Vijay P.

    2015-10-06

    Using a 10 nm thick molybdenum oxide (MoO3-x) layer as a transparent and low barrier contact to p-CdTe, we demonstrate nanowire CdS-CdTe solar cells with a power conversion efficiency of 11% under front side illumination. Annealing the as-deposited MoO3 film in N2 resulted in a reduction of the cell’s series resistance, from 9.97 Ω/cm2 to 7.69 Ω/cm2, and increase in efficiency from 9.9% to 11%. Under illumination from the back, the MoO3-x/Au side, the nanowire solar cells yielded Jsc of 21 mA/cm2 and efficiency of 8.67%. Our results demonstrate use of a thin layer transition metal oxide as a potential way for a transparent back contact to nanowire CdS-CdTe solar cells. As a result, this work has implications toward enabling a novel superstrate structure nanowire CdS-CdTe solar cell on Al foil substrate by a low cost roll-to roll fabrication process.

  3. Computational discovery of ferromagnetic semiconducting single-layer CrSnTe3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhuang, Houlong L.; Xie, Yu; Kent, P. R. C.; Ganesh, P.

    2015-07-06

    Despite many single-layer materials being reported in the past decade, few of them exhibit magnetism. Here we perform first-principles calculations using accurate hybrid density functional methods (HSE06) to predict that single-layer CrSnTe3 (CST) is a ferromagnetic semiconductor, with band gaps of 0.9 and 1.2 eV for the majority and minority spin channels, respectively. We determine the Curie temperature as 170 K, significantly higher than that of single-layer CrSiTe3 (90K) and CrGeTe3 (130 K). This is due to the enhanced ionicity of the Sn-Te bond, which in turn increases the superexchange coupling between the magnetic Cr atoms. We further explore themore » mechanical and dynamical stability and strain response of this single-layer material for possible epitaxial growth. Lastly, our study provides an intuitive approach to understand and design novel single-layer magnetic semiconductors for a wide range of spintronics and energy applications.« less

  4. In-situ crystallization of GeTe\\GaSb phase change memory stacked films

    SciTech Connect (OSTI)

    Velea, A.; Borca, C. N.; Grolimund, D.; Socol, G.; Galca, A. C.; Popescu, M.; Bokhoven, J. A. van

    2014-12-21

    Single and double layer phase change memory structures based on GeTe and GaSb thin films were deposited by pulsed laser deposition (PLD). Their crystallization behavior was studied using in-situ synchrotron techniques. Electrical resistance vs. temperature investigations, using the four points probe method, showed transition temperatures of 138 °C and 198 °C for GeTe and GaSb single films, respectively. It was found that after GeTe crystallization in the stacked films, Ga atoms from the GaSb layer diffused in the vacancies of the GeTe crystalline structure. Therefore, the crystallization temperature of the Sb-rich GaSb layer is decreased by more than 30 °C. Furthermore, at 210 °C, the antimony excess from GaSb films crystallizes as a secondary phase. At higher annealing temperatures, the crystalline Sb phase increased on the expense of GaSb crystalline phase which was reduced. Extended X-ray absorption fine structure (EXAFS) measurements at the Ga and Ge K-edges revealed changes in their local atomic environments as a function of the annealing temperature. Simulations unveil a tetrahedral configuration in the amorphous state and octahedral configuration in the crystalline state for Ge atoms, while Ga is four-fold coordinated in both as-deposited and annealed samples.

  5. Te-Moak Tribe of Western Shoshone: Battle Mountain Colony- 2012 Project

    Broader source: Energy.gov [DOE]

    The Feasibility Study for the Battle Mountain Renewable Energy Park project ("Feasibility Study") will assess the feasibility, benefits, and impacts of a 5-megawatt (MW) solar photovoltaic (PV) generating system (the "Solar Project" or "Energy Park") on the Te-Moak Tribe of Western Shoshone Indians of Nevada Battle Mountain Colony in Battle Mountain, Nevada.

  6. Investigation of deep level defects in CdTe thin films

    SciTech Connect (OSTI)

    Shankar, H.; Castaldini, A.; Dauksta, E.; Medvid, A.; Cavallini, A.

    2014-02-21

    In the past few years, a large body of work has been dedicated to CdTe thin film semiconductors, as the electronic and optical properties of CdTe nanostructures make them desirable for photovoltaic applications. The performance of semiconductor devices is greatly influenced by the deep levels. Knowledge of parameters of deep levels present in as-grown materials and the identification of their origin is the key factor in the development of photovoltaic device performance. Photo Induced Current Transient Spectroscopy technique (PICTS) has proven to be a very powerful method for the study of deep levels enabling us to identify the type of traps, their activation energy and apparent capture cross section. In the present work, we report the effect of growth parameters and LASER irradiation intensity on the photo-electric and transport properties of CdTe thin films prepared by Close-Space Sublimation method using SiC electrical heating element. CdTe thin films were grown at three different source temperatures (630, 650 and 700 C). The grown films were irradiated with Nd:YAG LASER and characterized by Photo-Induced Current Transient Spectroscopy, Photocurrent measurementand Current Voltage measurements. The defect levels are found to be significantly influenced by the growth temperature.

  7. Relic neutralino surface at a 100 TeV collider

    SciTech Connect (OSTI)

    Bramante, Joseph; Fox, Patrick J.; Martin, Adam; Ostdiek, Bryan; Plehn, Tilman; Schell, Torben; Takeuchi, Michihisa

    2015-03-11

    We map the parameter space for minimal supersymmetric Standard Model neutralino dark matter which freezes out to the observed relic abundance, in the limit that all superpartners except the neutralinos and charginos are decoupled. In this space of relic neutralinos, we show the dominant dark matter annihilation modes, the mass splittings among the electroweakinos, direct detection rates, and collider cross sections. The mass difference between the dark matter and the next-to-lightest neutral and charged states is typically much less than electroweak gauge boson masses. With these small mass differences, the relic neutralino surface is accessible to a future 100 TeV hadron collider, which can discover interneutralino mass splittings down to 1 GeV and thermal relic dark matter neutralino masses up to 1.5 TeV with a few inverse attobarns of luminosity. This coverage is a direct consequence of the increased collider energy: in the Standard Model events with missing transverse momentum in the TeV range have mostly hard electroweak radiation, distinct from the soft radiation shed in compressed electroweakino decays. As a result, we exploit this kinematic feature in final states including photons and leptons, tailored to the 100 TeV collider environment.

  8. Higgs Coupling Measurements at a 1 TeV Linear Collider

    SciTech Connect (OSTI)

    Barklow, T

    2003-12-18

    Methods for extracting Higgs boson signals at a 1 TeV center-of-mass energy e{sup +}e{sup -} linear collider are described. In addition, estimates are given for the accuracy with which branching fractions can be measured for Higgs boson decays to b{bar b} WW, gg, and {gamma}{gamma}.

  9. Nuclear structure relevant to neutrinoless double beta decay candidate {sup 130}Te and other recent results

    SciTech Connect (OSTI)

    Kay, B. P. [Physics Division, Argonne National Laboratory, Illinois 60439 (United States)

    2013-12-30

    We have undertaken a series of single-nucleon and pair transfer reaction measurements to help constrain calculations of the nuclear matrix elements for neutrinoless double beta decay. In this talk, a short overview of measurements relevant to the {sup 130}Te?{sup 130}Xe system is given. Brief mention is made of other recent and forthcoming results.

  10. Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Guo, Shaojun; Andrew F. Fidler; He, Kai; Su, Dong; Chen, Gen; Lin, Qianglu; Pietryga, Jeffrey M.; Klimov, Victor I.

    2015-11-06

    In this study, the rational design and synthesis of narrow-gap colloidal semiconductor nanocrystals (NCs) is an important step toward the next generation of solution-processable photovoltaics, photodetectors, and thermoelectric devices. SnTe NCs are particularly attractive as a Pb-free alternative to NCs of narrow-gap lead chalcogenides. Previous synthetic efforts on SnTe NCs have focused on spherical nanoparticles. Here we report new strategies for synthesis of SnTe NCs with shapes tunable from highly monodisperse nanocubes, to nanorods (NRs) with variable aspect ratios, and finally to long, straight nanowires (NWs). Reaction at high temperature quickly forms thermodynamically favored nanocubes, but low temperatures lead tomore » elongated particles. Transmission electron microscopy studies of reaction products at various stages of the synthesis reveal that the growth and shape-focusing of monodisperse SnTe nanocubes likely involves interparticle ripening, while directional growth of NRs and NWs may be initiated by particle dimerization via oriented attachment.« less

  11. Project Reports for Te-Moak Tribe of Western Shoshone: Battle Mountain Colony- 2012 Project

    Broader source: Energy.gov [DOE]

    The Feasibility Study for the Battle Mountain Renewable Energy Park project ("Feasibility Study") will assess the feasibility, benefits, and impacts of a 5-megawatt (MW) solar photovoltaic (PV) generating system (the "Solar Project" or "Energy Park") on the Te-Moak Tribe of Western Shoshone Indians of Nevada Battle Mountain Colony in Battle Mountain, Nevada.

  12. Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices: Preprint

    SciTech Connect (OSTI)

    Gessert, T. A.; Dhere, R. G.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Bergeson, J. D.

    2011-07-01

    We discuss typical and alternative procedures to analyze time-resolved photoluminescence (TRPL) measurements of minority carrier lifetime (MCL) with the hope of enhancing our understanding of how this technique may be used to better analyze CdTe photovoltaic (PV) device functionality. Historically, TRPL measurements of the fast recombination rate (t1) have provided insightful correlation with broad device functionality. However, we have more recently found that t1 does not correlate as well with smaller changes in device performance, nor does it correlate well with performance differences observed between superstrate and substrate CdTe PV devices. This study presents TRPL data for both superstrate and substrate CdTe devices where both t1 and the slower TRPL decay (t2) are analyzed. The study shows that changes in performance expected from small changes in device processing may correlate better with t2. Numerical modeling further suggests that, for devices that are expected to have similar drift field in the depletion region, effects of changes in bulk MCL and interface recombination should be more pronounced in t2. Although this technique may provide future guidance to improving CdS/CdTe device performance, it is often difficult to extract statistically precise values for t2, and therefore t2 data may demonstrate significant scatter when correlated with performance parameters.

  13. Rashba effect in single-layer antimony telluroiodide SbTeI

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhuang, Houlong L.; Cooper, Valentino R.; Xu, Haixuan; Ganesh, P.; Hennig, Richard G.; Kent, P. R. C.

    2015-09-04

    Exploring spin-orbit coupling (SOC) in single-layer materials is important for potential spintronics applications. In this paper, using first-principles calculations, we show that single-layer antimony telluroiodide SbTeI behaves as a two-dimensional semiconductor exhibiting a G0W0 band gap of 1.82 eV. More importantly, we observe the Rashba spin splitting in the SOC band structure of single-layer SbTeI with a sizable Rashba coupling parameter of 1.39 eV Å, which is significantly larger than that of a number of two-dimensional systems including surfaces and interfaces. The low formation energy and real phonon modes of single-layer SbTeI imply that it is stable. Finally, our studymore » suggests that single-layer SbTeI is a candidate single-layer material for applications in spintronics devices.« less

  14. Nanowire CdS-CdTe solar cells with molybdenum oxide as contact

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dang, Hongmei; Singh, Vijay P.

    2015-10-06

    Using a 10 nm thick molybdenum oxide (MoO3-x) layer as a transparent and low barrier contact to p-CdTe, we demonstrate nanowire CdS-CdTe solar cells with a power conversion efficiency of 11% under front side illumination. Annealing the as-deposited MoO3 film in N2 resulted in a reduction of the cell’s series resistance, from 9.97 Ω/cm2 to 7.69 Ω/cm2, and increase in efficiency from 9.9% to 11%. Under illumination from the back, the MoO3-x/Au side, the nanowire solar cells yielded Jsc of 21 mA/cm2 and efficiency of 8.67%. Our results demonstrate use of a thin layer transition metal oxide as a potentialmore » way for a transparent back contact to nanowire CdS-CdTe solar cells. As a result, this work has implications toward enabling a novel superstrate structure nanowire CdS-CdTe solar cell on Al foil substrate by a low cost roll-to roll fabrication process.« less

  15. Relic neutralino surface at a 100 TeV collider

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bramante, Joseph; Fox, Patrick J.; Martin, Adam; Ostdiek, Bryan; Plehn, Tilman; Schell, Torben; Takeuchi, Michihisa

    2015-03-11

    We map the parameter space for minimal supersymmetric Standard Model neutralino dark matter which freezes out to the observed relic abundance, in the limit that all superpartners except the neutralinos and charginos are decoupled. In this space of relic neutralinos, we show the dominant dark matter annihilation modes, the mass splittings among the electroweakinos, direct detection rates, and collider cross sections. The mass difference between the dark matter and the next-to-lightest neutral and charged states is typically much less than electroweak gauge boson masses. With these small mass differences, the relic neutralino surface is accessible to a future 100 TeVmore » hadron collider, which can discover interneutralino mass splittings down to 1 GeV and thermal relic dark matter neutralino masses up to 1.5 TeV with a few inverse attobarns of luminosity. This coverage is a direct consequence of the increased collider energy: in the Standard Model events with missing transverse momentum in the TeV range have mostly hard electroweak radiation, distinct from the soft radiation shed in compressed electroweakino decays. As a result, we exploit this kinematic feature in final states including photons and leptons, tailored to the 100 TeV collider environment.« less

  16. Probing the size and environment induced phase transformation in CdSe quantum dots

    SciTech Connect (OSTI)

    Karakoti, Ajay S.; Sanghavi, Shail P.; Nachimuthu, Ponnusamy; Yang, Ping; Thevuthasan, Suntharampillai

    2011-11-17

    The structural and electronic properties of CdSe quantum dots in toluene and drop-casted on Si wafer were investigated by in-situ micro X-ray diffraction, X-ray photoelectron spectroscopy and UV-Vis absorption and emission spectroscopy. The in-situ micro diffraction data show that the CdSe quantum dots capped with TOPO or hexadecylamine (HDA) in toluene exhibit predominantly wurtzite crystal structure, which undergoes a phase transformation to zinc blende crystal structure following drop casting on Si and this phase transition increases with decreasing the size of the CdSe quantum dots. Decreasing the size of quantum dots also increases the Se vacancies that facilitate the phase transformation. The X-ray photoelectron spectra show a systematic increase in the core level binding energies of Cd 3d and Se 3d, the band gap and the Cd/Se ratio as the size of the quantum dots decreases from 6.6nm to 2.1nm. This is attributed to the quantum confinement of CdSe crystallites by the capping ligands in toluene which increases with decreasing the size of the quantum dots. However, drop-casting quantum dots on Si alter the density and arrangement of capping ligands and solvent molecules on the quantum dots which causes significant phase transformation.

  17. Optimal packing size of non-ligated CdSe nanoclusters for microstructure synthesis

    SciTech Connect (OSTI)

    Tefera, Anteneh G.; Mochena, Mogus D.; Johnson, Elijah; Dickerson, James

    2014-09-14

    Structural and electrostatic properties of nanoclusters of CdSe of diameter 1–2 nm are studied with first principle calculations to determine the optimal size for synthesizing microstructures. Based on robustness of the core structure, i.e., the retention of tetrahedral geometry, hexagonal ring structure, and overall wu{sup ¨}rtzite structure to surface relaxations, we conclude that nanoclusters of ~2 nm diameter are the best candidates to form a dense microstructure with minimal interstitial space. Se-terminated surfaces retain a zigzag structure as Se atoms are pulled out and Cd atoms are pulled in due to relaxation, therefore, are best suited for inter-nanocluster formations.

  18. An oleic acid-capped CdSe quantum-dot sensitized solar cell

    SciTech Connect (OSTI)

    Chen Jing; Song, J. L.; Deng, W. Q.; Sun, X. W.; Jiang, C. Y.; Lei, W.; Huang, J. H.; Liu, R. S.

    2009-04-13

    In this letter, we report an oleic acid (OA)-capped CdSe quantum-dot sensitized solar cell (QDSSC) with an improved performance. The TiO{sub 2}/OA-CdSe photoanode in a two-electrode device exhibited a photon-to-current conversion efficiency of 17.5% at 400 nm. At AM1.5G irradiation with 100 mW/cm{sup 2} light intensity, the QDSSCs based on OA-capped CdSe showed a power conversion efficiency of about 1%. The function of OA was to increase QD loading, extend the absorption range and possibly suppress the surface recombination.

  19. Signals of a 2 TeV $W'$ boson and a heavier $Z'$ boson

    SciTech Connect (OSTI)

    Dobrescu, Bogdan A.; Fox, Patrick J.

    2015-11-05

    We construct an SU(2)L x SU(2)R x U(1)B-L model with a Higgs sector that consists of a bidoublet and a doublet, and with a right-handed neutrino sector that includes one Dirac fermion and one Majorana fermion. This model explains the CMS and ATLAS excess events in the e+e-jj, jj, Wh0 and WZ channels in terms of a W' boson of mass near 1.9 TeV and of coupling gR in the 0.4-0.5 range (with the lower half preferred by the limits on tb- resonances). We found that the production cross section of this W' boson at the 13 TeV LHC is in the 720-1100 fb range, allowing sensitivity in more than 17 final states. Furthermore, we determine that the Z' boson has a mass in the 2.9-4.5 TeV range and several decay channels that can be probed in Run 2 of the LHC, including cascade decays via heavy Higgs bosons. Interpreting the CMS e+e-event at 2.9 TeV as coming from the Z', the mass ratio of the Z' and W' bosons requires gR ≈0.48, which implies a pp →Z' → ℓ+-cross section of 2 fb at √s = 13 TeV.

  20. Phonon properties of BaFe?X? (X=S, Se) spin ladder compounds

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Popovicq, Z. V.; Petrovic, C.; Scepanovic, M.; Lazarevic, N.; Opacic, M.; Radonjic, M. M.; Tanaskovic, D.; Lei, Hechang

    2015-02-27

    We present the Raman scattering spectra of the S=2 spin ladder compounds BaFe?X? (X=S,Se) in a temperature range between 20 and 400 K. Although the crystal structures of these two compounds are both orthorhombic and very similar, they are not isostructural. The unit cell of BaFe?S? (BaFe?Se?) is base-centered Cmcm (primitive Pnma), giving 18 (36) modes to be observed in the Raman scattering experiment. We have detected almost all Raman active modes, predicted by factor group analysis, which can be observed from the cleavage planes of these compounds. Assignment of the observed Raman modes of BaFe?S(Se)? is supported by themorelattice dynamics calculations. The antiferromagnetic long-range spin ordering in BaFe?Se? below TN=255K leaves a fingerprint both in the A1g and B3g phonon mode linewidth and energy.less

  1. Flow of US/SE Program Funding to National Laboratories (FY 2014 Enacted)

    Broader source: Energy.gov [DOE]

    This figure illustrates the flow of funding to each of 17 DOE National Laboratories from five of the six US/SE program offices. IE does not directly fund program work at the National Laboratories.

  2. Enhanced spontaneous emission of CdSe quantum dots in monolithic II-VI pillar microcavities

    SciTech Connect (OSTI)

    Lohmeyer, H.; Kruse, C.; Sebald, K.; Gutowski, J.; Hommel, D.

    2006-08-28

    The emission properties of CdSe/ZnSe quantum dots in ZnSe-based pillar microcavities are studied. All-epitaxial cavities made of ZnSSe and MgS/ZnCdSe superlattices with a single quantum-dot sheet embedded have been grown by molecular beam epitaxy. Pillar structures with diameters down to 500 nm have been realized by focused-ion-beam etching. A pronounced enhancement of the spontaneous emission rate of quantum dots coupling to the fundamental mode of the cavities is found as evidence for the Purcell effect. The enhancement by a factor of up to 3.8 depends systematically on the pillar diameter and thus on the Purcell factor of the individual pillars.

  3. Thickness-dependent coherent phonon frequency in ultrathin FeSe...

    Office of Scientific and Technical Information (OSTI)

    After optical excitation, we observe periodic modulations of the photoelectron spectrum as a function of pump-probe delay for 1-unit-cell, 3-unit-cell, and 60-unit-cell thick FeSe ...

  4. Secretary Chu to Lead Delegation to SE4All, CEM Conferences in...

    Office of Environmental Management (EM)

    leading economies in London for the UN Sustainable Energy for All (SE4All) conference and ... Thursday, April 26, 2012 10:00 a.m. Joint Clean Energy Ministerial and Sustainable Energy ...

  5. Spin excitations in a model of FeSe with orbital ordering (Journal...

    Office of Scientific and Technical Information (OSTI)

    Spin excitations in a model of FeSe with orbital ordering Citation Details In-Document Search This content will become publicly available on December 27, 2016 Title: Spin ...

  6. Spin excitations in a model of FeSe with orbital ordering (Journal...

    Office of Scientific and Technical Information (OSTI)

    DOE PAGES Search Results Publisher's Accepted Manuscript: Spin excitations in a model of FeSe with orbital ordering This content will become publicly available on December 27, 2016 ...

  7. Super-Poissonian Statistics of Photon Emission from Single CdSe...

    Office of Scientific and Technical Information (OSTI)

    Title: Super-Poissonian Statistics of Photon Emission from Single CdSe-CdS Core-Shell Nanocrystals Coupled to Metal Nanostructures Authors: Park, Young-Shin ; Ghosh, Yagnaseni ; ...

  8. Low-temperature ferromagnetic properties in Co-doped Ag{sub 2}Se nanoparticles

    SciTech Connect (OSTI)

    Yang, Fengxia E-mail: xia9020@hust.edu.cn; Yu, Gen; Han, Chong; Liu, Tingting; Zhang, Duanming; Xia, Zhengcai E-mail: xia9020@hust.edu.cn

    2014-01-06

    β-Ag{sub 2}Se is a topologically nontrivial insulator. The magnetic properties of Co-doped Ag{sub 2}Se nanoparticles with Co concentrations up to 40% were investigated. The cusp of zero-field-cooling magnetization curves and the low-temperature hysteresis loops were observed. With increasing concentration of Co{sup 2+} ions mainly substituting Ag{sub I} sites in the Ag{sub 2}Se structure, the resistivity, Curie temperature T{sub c}, and magnetization increased. At 10 T, a sharp drop of resistance near T{sub c} was detected due to Co dopants. The ferromagnetic behavior in Co-doped Ag{sub 2}Se might result from the intra-layer ferromagnetic coupling and surface spin. This magnetic semiconductor is a promising candidate in electronics and spintronics.

  9. Impact of annealing on the chemical structure and morphology of the thin-film CdTe/ZnO interface

    SciTech Connect (OSTI)

    Horsley, K. Hanks, D. A.; Weir, M. G.; Beal, R. J.; Wilks, R. G.; Blum, M.; Häming, M.; Hofmann, T.; Weinhardt, L.; and others

    2014-07-14

    To enable an understanding and optimization of the optoelectronic behavior of CdTe-ZnO nanocomposites, the morphological and chemical properties of annealed CdTe/ZnO interface structures were studied. For that purpose, CdTe layers of varying thickness (4–24 nm) were sputter-deposited on 100 nm-thick ZnO films on surface-oxidized Si(100) substrates. The morphological and chemical effects of annealing at 525 °C were investigated using X-ray Photoelectron Spectroscopy (XPS), X-ray-excited Auger electron spectroscopy, energy dispersive X-ray spectroscopy, scanning electron microscopy, and atomic force microscopy. We find a decrease of the Cd and Te surface concentration after annealing, parallel to an increase in Zn and O signals. While the as-deposited film surfaces show small grains (100 nm diameter) of CdTe on the ZnO surface, annealing induces a significant growth of these grains and separation into islands (with diameters as large as 1 μm). The compositional change at the surface is more pronounced for Cd than for Te, as evidenced using component peak fitting of the Cd and Te 3d XPS peaks. The modified Auger parameters of Cd and Te are also calculated to further elucidate the local chemical environment before and after annealing. Together, these results suggest the formation of tellurium and cadmium oxide species at the CdTe/ZnO interface upon annealing, which can create a barrier for charge carrier transport, and might allow for a deliberate modification of interface properties with suitably chosen thermal treatment parameters.

  10. Unique Challenges Accompany Thick-Shell CdSe/nCdS (n > 10) Nanocrystal Synthesis

    SciTech Connect (OSTI)

    Guo, Y; Marchuk, K; Abraham, R; Sampat, S; Abraham, R.; Fang, N; Malko, AV; Vela, J

    2011-12-23

    Thick-shell CdSe/nCdS (n {ge} 10) nanocrystals were recently reported that show remarkably suppressed fluorescence intermittency or 'blinking' at the single-particle level as well as slow rates of Auger decay. Unfortunately, whereas CdSe/nCdS nanocrystal synthesis is well-developed up to n {le} 6 CdS monolayers (MLs), reproducible syntheses for n {ge} 10 MLs are less understood. Known procedures sometimes result in homogeneous CdS nucleation instead of heterogeneous, epitaxial CdS nucleation on CdSe, leading to broad and multimodal particle size distributions. Critically, obtained core/shell sizes are often below those desired. This article describes synthetic conditions specific to thick-shell growth (n {ge} 10 and n {ge} 20 MLs) on both small (sub2 nm) and large (>4.5 nm) CdSe cores. We find added secondary amine and low concentration of CdSe cores and molecular precursors give desired core/shell sizes. Amine-induced, partial etching of CdSe cores results in apparent shell-thicknesses slightly beyond those desired, especially for very-thick shells (n {ge} 20 MLs). Thermal ripening and fast precursor injection lead to undesired homogeneous CdS nucleation and incomplete shell growth. Core/shells derived from small CdSe (1.9 nm) have longer PL lifetimes and more pronounced blinking at single-particle level compared with those derived from large CdSe (4.7 nm). We expect our new synthetic approach will lead to a larger throughput of these materials, increasing their availability for fundamental studies and applications.

  11. Synthesis of CdSe quantum dots for quantum dot sensitized solar cell

    SciTech Connect (OSTI)

    Singh, Neetu Kapoor, Avinashi; Kumar, Vinod; Mehra, R. M.

    2014-04-24

    CdSe Quantum Dots (QDs) of size 0.85 nm were synthesized using chemical route. ZnO based Quantum Dot Sensitized Solar Cell (QDSSC) was fabricated using CdSe QDs as sensitizer. The Pre-synthesized QDs were found to be successfully adsorbed on front ZnO electrode and had potential to replace organic dyes in Dye Sensitized Solar Cells (DSSCs). The efficiency of QDSSC was obtained to be 2.06 % at AM 1.5.

  12. Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response

    SciTech Connect (OSTI)

    Feng, Wei; Wu, Jing-Bin; Li, Xiaoli; Zheng, Wei; Zhou, Xin; Xiao, Kai; Cao, Wenwu; Yang, Bin; Idrobo, Juan-Carlos; Basile, Leonardo; Tian, Weiquan; Tan, PingHeng; Hu, PingAn

    2015-05-20

    In this paper, we demonstrate the strategies and principles for the performance improvement of layered semiconductor based photodetectors using multilayer indium selenide (InSe) as the model material. It is discovered that multiple reflection interference at the interfaces in the phototransistor device leads to a thickness-dependent photo-response, which provides a guideline to improve the performance of layered semiconductor based phototransistors. The responsivity and detectivity of InSe nanosheet phototransistor can be adjustable using applied gate voltage. Our InSe nanosheet phototransistor exhibits ultrahigh responsivity and detectivity. An ultrahigh external photo-responsivity of ~104 A W-1 can be achieved from broad spectra ranging from UV to near infrared wavelength using our InSe nanosheet photodetectors. The detectivity of multilayer InSe devices is ~1012 to 1013 Jones, which surpasses that of the currently exploited InGaAs photodetectors (1011 to 1012 Jones). Finally, this research shows that multilayer InSe nanosheets are promising materials for high performance photodetectors.

  13. Doping SrTiO3 supported FeSe by excess atoms and oxygen vacancies

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shanavas, Kavungal Veedu; Singh, David J.

    2015-07-24

    Photoemission studies of FeSe monolayer films on SrTiO3 substrate have shown electronic structures that deviate from pristine FeSe, consistent with heavy electron doping. With the help of first-principles calculations we studied the effect of excess Fe and Se atoms on the monolayer and oxygen vacancies in the substrate in order to understand the reported Fermi surface in this system. We find that both excess Fe and Se atoms prefer the same adsorption site above the bottom Se atoms on the monolayer. The adsorbed Fe is strongly magnetic and contributes electrons to the monolayer, while excess Se hybridizes with the monolayermore » Fe-d states and partially opens a gap just above the Fermi energy. We also find that the two-dimensional electron gas generated by the oxygen vacancies is partly transferred to the monolayer and can potentially suppress the hole pockets around the Γ point. Furthermore, both O vacancies in the SrTiO3 substrate and excess Fe over the monolayer can provide high levels of electron doping.« less

  14. Search for contact interactions in dimuon events from pp collisions at ?s=7 TeV with the ATLAS detector

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Aad, G.; Abbott, B.; Abdallah, J.; Abdelalim, A. A.; Abdesselam, A.; Abdinov, O.; Abi, B.; Abolins, M.; Abramowicz, H.; Abreu, H.; et al

    2011-07-01

    A search for contact interactions has been performed using dimuon events recorded with the ATLAS detector in proton-proton collisions at ?s=7 TeV. The data sample corresponds to an integrated luminosity of 42 pb?. No significant deviation from the standard model is observed in the dimuon mass spectrum, allowing the following 95% C.L. limits to be set on the energy scale of contact interactions: ?>4.9 TeV (4.5 TeV) for constructive (destructive) interference in the left-left isoscalar compositeness model. These limits are the most stringent to date for ??qq contact interactions.

  15. Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications

    DOE Patents [OSTI]

    Albin, David S.; Carapella, Jeffrey J.; Tuttle, John R.; Contreras, Miguel A.; Gabor, Andrew M.; Noufi, Rommel; Tennant, Andrew L.

    1995-07-25

    A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se.sub.2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550.degree. C.) at which Cu(In,Ga)Se.sub.2 is solid and Cu.sub.x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu.sub.x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu.sub.x (In,Ga).sub.y Se.sub.z. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se can be made by sequentially depositing or co-depositing the metal precursors, Cu and (In, Ga), on the substrate at room temperature, ramping up the thin-film temperature in the presence of Se overpressure to a moderate anneal temperature (about 450.degree. C.) and holding that temperature and the Se overpressure for an annealing period. A nonselenizing, low temperature anneal at about 100.degree. C. can also be used to homogenize the precursors on the substrates before the selenizing, moderate temperature anneal.

  16. A comparative transport study of Bi{sub 2}Se{sub 3} and Bi{sub 2}Se{sub 3}/yttrium iron garnet

    SciTech Connect (OSTI)

    Jiang, Zilong; Tang, Chi; Shi, Jing; Katmis, Ferhat; Wei, Peng; Moodera, Jagadeesh S.

    2014-06-02

    Bilayers of 20 quintuple layer Bi{sub 2}Se{sub 3} on 30 nm thick yttrium iron garnet (YIG) have been grown with molecular beam epitaxy in conjunction with pulsed laser deposition. The presence of the ferri-magnetic insulator YIG causes additional scattering to the surface states of the Bi{sub 2}Se{sub 3} topological insulator layer, as indicated by the temperature dependence of the resistivity. From the two-channel analysis of the Hall data, we find that the surface contribution in the bilayer samples is greatly reduced. Furthermore, the weak antilocalization effect from the surface states is clearly suppressed due to the presence of the YIG layer.

  17. Non-H{sub 2}Se, ultra-thin CuInSe{sub 2} devices. Annual subcontract report, November 10, 1992--November 9, 1993

    SciTech Connect (OSTI)

    Delahoy, A.E.; Britt, J.; Faras, F.; Kiss, Z.

    1994-09-01

    This report describes advances made during Phase II (November 10, 1992-November 9, 1993) of a three-phase, cost-shared subcontract whose ultimate goal is the demonstration of thin film CuInSe{sub 2} photovoltaic modules prepared by methods adaptable to safe, high yield, high volume manufacturing. At the end of Phase I, EPV became one of the first groups to clear the 10% efficiency barrier for CIS cells prepared by non-H{sub 2}Se selenization. During Phase II a total area efficiency of 12.5% was achieved for a 1 cm{sup 2} cell. The key achievement of Phase II was the production of square foot CIS modules without the use of H{sub 2}Se. This is seen as a crucial step towards the commercialization of CIS. Using a novel interconnect technology, EPV delivered an 8.0% aperture area efficiency mini-module and a 6.2% aperture area efficiency 720 cm{sub 2} module to NREL. On the processing side, advances were made in precursor formation and the selenization profile, both of which contributed to higher quality CIS. The higher band gap quaternary chalcopyrite material CuIn(S{sub x}, Se{sub 1{minus}X}){sub 2} was prepared and 8% cells were fabricated using this material. Device analysis revealed a correlation between long wavelength quantum efficiency and the CIS Cu/In ratio. Temperature dependent studies highlighted the need for high V{sub OC} devices to minimize the impact of the voltage drop at operating temperature. Numerical modeling of module performance was performed in order to identify the correct ZnO sheet resistance for modules. Efforts in Phase III will focus on increase of module efficiency to 9-10%, initiation of an outdoor testing program, preparation of completely uniform CIS plates using second generation selenization equipment, and exploration of alternative precursors for CIS formation.

  18. Hidden Superlattice in Tl2(SC6H4S) and Tl2(SeC6H4Se) Solved from Powder X-ray Diffraction

    SciTech Connect (OSTI)

    K Stone; D Turner; M Singh; T Vaid; P Stephens

    2011-12-31

    The crystal structures of the isostructural title compounds poly[({mu}-benzene-1,4-dithiolato)dithallium], Tl{sub 2}(SC{sub 6}H{sub 4}S), and poly[({mu}-benzene-1,4-diselenolato)dithallium], Tl{sub 2}(SeC{sub 6}H{sub 4}Se), were solved by simulated annealing from high-resolution synchrotron X-ray powder diffraction. Rietveld refinements of an initial structure with one formula unit per triclinic cell gave satisfactory agreement with the data, but led to a structure with impossibly close non-bonded contacts. A disordered model was proposed to alleviate this problem, but an alternative supercell structure leads to slightly improved agreement with the data. The isostructural superlattice structures were confirmed for both compounds through additional data collection, with substantially better counting statistics, which revealed the presence of very weak superlattice peaks not previously seen. Overall, each structure contains Tl-S or Tl-Se two-dimensional networks, connected by phenylene bridges. The sulfur (or selenium) coordination sphere around each thallium is a highly distorted square pyramid or a 'see-saw' shape, depending upon how many Tl-S or Tl-Se interactions are considered to be bonds. In addition, the two compounds contain pairs of Tl{sup I} ions that interact through a closed-shell 'thallophilic' interaction: in the sulfur compound there are two inequivalent pairs of Tl atoms with Tl-Tl distances of 3.49 and 3.58 {angstrom}, while in the selenium compound those Tl-Tl interactions are at 3.54 and 3.63 {angstrom}.

  19. Persistent photoconductivity in two-dimensional Mo1-xW xSe2–MoSe2 van der Waals heterojunctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Puretzky, Alexander A.; Basile, Leonardo; Idrobo, Juan Carlos; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai; Li, Xufan; Lin, Ming -Wei; Wang, Kei

    2016-02-16

    Van der Waals (vdW) heterojunctions consisting of vertically-stacked individual or multiple layers of two-dimensional (2D) layered semiconductors, especially the transition metal dichalcogenides (TMDs), are fascinating new artificial solids just nanometers-thin that promise novel optoelectronic functionalities due to the sensitivity of their electronic and optical properties to strong quantum confinement and interfacial interactions. Here, monolayers of n-type MoSe2 and p-type Mo1-xW xSe2–MoSe2 are grown by vapor transport methods, then transferred and stamped to form artificial vdW heterostructures with different interlayer orientations. Atomic-resolution Z-contrast electron microscopy and electron diffraction are used to characterize both the individual monolayers and the atomic registry betweenmore » layers in the bilayer vdW heterostructures. These measurements are compared with photoluminescence and low-frequency Raman spectroscopy, which indicates strong interlayer coupling in heterostructures. Remarkably, the heterojunctions exhibit an unprecedented photoconductivity effect that persists at room temperature for several days. This persistent photoconductivity is shown to be tunable by applying a gate bias that equilibrates the charge distribution. Furthermore, these measurements indicate that such ultrathin vdW heterojunctions can function as rewritable optoelectronic switches or memory elements under time-dependent photo-illumination, an effect which appears promising for new monolayer TMDs-based optoelectronic devices applications.« less

  20. Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells

    DOE Patents [OSTI]

    Noufi, Rommel; Gabor, Andrew M.; Tuttle, John R.; Tennant, Andrew L.; Contreras, Miguel A.; Albin, David S.; Carapella, Jeffrey J.

    1995-01-01

    A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.2 thin film.

  1. Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells

    DOE Patents [OSTI]

    Noufi, R.; Gabor, A.M.; Tuttle, J.R.; Tennant, A.L.; Contreras, M.A.; Albin, D.S.; Carapella, J.J.

    1995-08-15

    A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S){sub 2} comprises depositing a first layer of (In,Ga){sub x} (Se,S){sub y} followed by depositing just enough Cu+(Se,S) or Cu{sub x} (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga){sub x} (Se,S){sub y} is deposited first, followed by deposition of all the Cu+(Se,S) or Cu{sub x} (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu{sub x} (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga){sub x} (Se,S){sub y} to go slightly Cu-poor in the final Cu(In,Ga)(Se,S){sub 2} thin film. 5 figs.

  2. Rare-earth-rich tellurides: Gd{sub 4}NiTe{sub 2} and Er{sub 5}M{sub 2}Te{sub 2} (M=Co, Ni)

    SciTech Connect (OSTI)

    Magliocchi, Carmela; Meng, Fanqin; Hughbanks, Timothy . E-mail: trh@mail.chem.tamu.edu

    2004-11-01

    Three new rare earth metal-rich compounds, Gd{sub 4}NiTe{sub 2}, and Er{sub 5}M{sub 2}Te{sub 2} (M=Ni, Co), were synthesized in direct reactions using R, R{sub 3}M, and R{sub 2}Te{sub 3} (R=Gd, Er; M=Co, Ni) and single-crystal structures were determined. Gd{sub 4}NiTe{sub 2} is orthorhombic and crystallizes in space group Pnma with four formula units per cell. Lattice parameters at 110(2)K are a=15.548(9), b=4.113(2), c=11.7521(15)A. Er{sub 5}Ni{sub 2}Te{sub 2} and Er{sub 5}Co{sub 2}Te{sub 2} are isostructural and crystallize in the orthorhombic space group Cmcm with two formula units per cell. Lattice parameters at 110(2)K are a=3.934(1), b=14.811(4), c=14.709(4)A, and a=3.898(1), b=14.920(3), c=14.889(3)A, respectively. Metal-metal bonding correlations were analyzed using the empirical Pauling bond order concept.

  3. Electronic tuning of the transport properties of off-stoichiometric Pb{sub x}Sn{sub 1−x}Te thermoelectric alloys by Bi{sub 2}Te{sub 3} doping

    SciTech Connect (OSTI)

    Guttmann, Gilad M.; Dadon, David; Gelbstein, Yaniv

    2015-08-14

    The recent energy demands affected by the dilution of conventional energy resources and the growing awareness of environmental considerations had motivated many researchers to seek for novel renewable energy conversion methods. Thermoelectric direct conversion of thermal into electrical energies is such a method, in which common compositions include IV-VI semiconducting compounds (e.g., PbTe and SnTe) and their alloys. For approaching practical thermoelectric devices, the current research is focused on electronic optimization of off-stoichiometric p-type Pb{sub x}Sn{sub 1−x}Te alloys by tuning of Bi{sub 2}Te{sub 3} doping and/or SnTe alloying levels, while avoiding the less mechanically favorable Na dopant. It was shown that upon such doping/alloying, higher ZTs, compared to those of previously reported undoped Pb{sub 0.5}Sn{sub 0.5}Te alloy, were obtained at temperatures lower than 210–340 °C, depending of the exact doping/alloying level. It was demonstrated that upon optimal grading of the carrier concentration, a maximal thermoelectric efficiency enhancement of ∼38%, compared to that of an undoped material, is expected.

  4. Cooling effect of nanoscale Bi2Te3/Sb2Te3 multilayered thermoelectric thin films

    SciTech Connect (OSTI)

    Hines, Mardecial; Lenhardt, Joshua; Lu, Ming; Jiang, Li; Xiao, Zhigang

    2012-01-01

    Managing high heat flux is one of the greatest technical challenges the integrated circuit (IC) industry is facing because the rising temperature limits device minimization and decreases its lifetime. In this paper, we report the characterization of the cooling effect of nanoscale Bi2Te3/Sb2Te3 multilayered thin films. The multilayerthin film was prepared with e-beam evaporation, and had 21 layers (5-nm-thick each layer and 105-nm-thick total). A thermoelectric device of the multilayerfilm, which is sandwiched between a diode temperature sensor and a platinum temperature sensor, was fabricated to measure the cooling effect. A maximum cooling temperature difference of about 3K was obtained from the film at an applied dc electrical current of 5 mA. The nanoscale multilayerfilm could be integrated in the IC devices for the application of high-efficiency thermoelectric solid-state cooling.

  5. Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance

    SciTech Connect (OSTI)

    Lemmon, John P.; Polikarpov, Evgueni; Bennett, Wendy D.; Kovarik, Libor

    2012-05-25

    We report on CdS/CdTe photovoltaic devices that contain a thin Ta₂O₅ film deposited onto the CdS window layer by sputtering. We show that for thicknesses below 5 nm, Ta₂O₅ films between CdS and CdTe positively affect the solar cell performance, improving JSC, VOC, and the cell power conversion efficiency despite the insulating nature of the interlayer material. Using the Ta₂O₅ interlayer, a VOC gain of over 100 mV was demonstrated compared to a CdTe/CdS baseline. Application of a 1nm Ta₂O₅ interlayer enabled the fabrication of CdTe solar cells with extremely thin (less than 30 nm) CdS window layers. The efficiency of these cells exceeded that of a base line cell with 95 nm of CdS.

  6. Modeling Cu Migration in CdTe Solar Cells Under Device-Processing and Long-Term Stability Conditions: Preprint

    SciTech Connect (OSTI)

    Teeter, G.; Asher, S.

    2008-05-01

    An impurity migration model for systems with material interfaces is applied to Cu migration in CdTe solar cells. In the model, diffusion fluxes are calculated from the Cu chemical potential gradient. Inputs to the model include Cu diffusivities, solubilities, and segregation enthalpies in CdTe, CdS and contact materials. The model yields transient and equilibrium Cu distributions in CdTe devices during device processing and under field-deployed conditions. Preliminary results for Cu migration in CdTe photovoltaic devices using available diffusivity and solubility data from the literature show that Cu segregates in the CdS, a phenomenon that is commonly observed in devices after back-contact processing and/or stress conditions.

  7. Polarization of Bi{sub 2}Te{sub 3} thin film in a floating-gate capacitor structure

    SciTech Connect (OSTI)

    Yuan, Hui E-mail: qli6@gmu.edu; Li, Haitao; Zhu, Hao; Zhang, Kai; Baumgart, Helmut; Bonevich, John E.; Richter, Curt A.; Li, Qiliang E-mail: qli6@gmu.edu

    2014-12-08

    Metal-Oxide-Semiconductor (MOS) capacitors with Bi{sub 2}Te{sub 3} thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi{sub 2}Te{sub 3} thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33?eV for separating the electron and hole pairs in the bulk of Bi{sub 2}Te{sub 3}, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent endurance, and the complementary metaloxidesemiconductor compatibility, the Bi{sub 2}Te{sub 3} embedded MOS structures are very interesting for memory application.

  8. The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

    SciTech Connect (OSTI)

    Zha, Gangqiang; Yang, Jian; Xu, Lingyan; Feng, Tao; Wang, Ning; Jie, Wanqi

    2014-01-28

    Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance can be explained using the deep trap model.

  9. One-Dimensional Reaction-Diffusion Simulation of Cu Migration in Polycrystalline CdTe Solar Cells

    SciTech Connect (OSTI)

    Guo, Da; Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Vasileska, Dragica; Ringhofer, Christain

    2014-06-13

    In this work, we report on developing 1D reaction-diffusion solver to understand the kinetics of p-type doping formation in CdTe absorbers and to shine some light on underlying causes of metastabilities observed in CdTe PV devices. Evolution of intrinsic and Cu-related defects in CdTe solar cell has been studied in time-space domain self-consistently with free carrier transport and Poisson equation. Resulting device performance was simulated as a function of Cu diffusion anneal time showing pronounced effect the evolution of associated acceptor and donor states can cause on device characteristics. Although 1D simulation has intrinsic limitations when applied to poly-crystalline films, the results suggest strong potential of the approach in better understanding of the performance and metastabilities of CdTe photovoltaic device.

  10. Search for quark compositeness in dijet angular distributions from pp collisions at sqrt(s) = 7 TeV

    SciTech Connect (OSTI)

    Chatrchyan, Serguei; et al.

    2012-05-01

    A search for quark compositeness using dijet angular distributions from pp collisions at sqrt(s) = 7 TeV is presented. The search has been carried out using a data sample corresponding to an integrated luminosity of 2.2 inverse femtobarns, recorded by the CMS experiment at the LHC. Normalized dijet angular distributions have been measured for dijet invariant masses from 0.4 TeV to above 3 TeV and compared with a variety of contact interaction models, including those which take into account the effects of next-to-leading-order QCD corrections. The data are found to be in agreement with the predictions of perturbative QCD, and lower limits are obtained on the contact interaction scale, ranging from 7.5 up to 14.5 TeV at 95% confidence level.

  11. Characterization of silver photodiffusion in Ge{sub 8}Sb{sub 2}Te{sub 11} thin films

    SciTech Connect (OSTI)

    Kumar, Sandeep; Singh, D.; Sandhu, S.; Thangaraj, R.

    2015-06-24

    Silver-doped amorphous Ge{sub 8}Sb{sub 2}Te{sub 11} thin films have been prepared by photodiffusion at room-temperature; the Ge{sub 8}Sb{sub 2}Te{sub 11}/Ag bilayer was deposited by vacuum thermal evaporation. Photodiffusion of Ag into the amorphous Ge{sub 8}Sb{sub 2}Te{sub 11} thin films has been carried out by illuminating the prepared Ge{sub 8}Sb{sub 2}Te{sub 11}/Ag bilayer with halogen lamp. The photodiffused silver depth profile was traced by means of time of flight secondary ion mass spectroscopy. The film remains amorphous after Ag photodiffusion. The crystallization temperature of the films was evaluated by temperature dependent sheet resistance measurement. The amorphous nature and crystalline phases of the films have been identified by using X-ray diffraction.

  12. The High-Resolution Lightweight Telescope for the EUV (HiLiTE)

    SciTech Connect (OSTI)

    Martinez-Galarce, D S; Boerner, P; Soufli, R; De Pontieu, B; Katz, N; Title, A; Gullikson, E M; Robinson, J C; Baker, S L

    2008-06-02

    The High-resolution Lightweight Telescope for the EUV (HiLiTE) is a Cassegrain telescope that will be made entirely of Silicon Carbide (SiC), optical substrates and metering structure alike. Using multilayer coatings, this instrument will be tuned to operate at the 465 {angstrom} Ne VII emission line, formed in solar transition region plasma at {approx}500,000 K. HiLiTE will have an aperture of 30 cm, angular resolution of {approx}0.2 arc seconds and operate at a cadence of {approx}5 seconds or less, having a mass that is about 1/4 that of one of the 20 cm aperture telescopes on the Atmospheric Imaging Assembly (AIA) instrument aboard NASA's Solar Dynamics Observatory (SDO). This new instrument technology thus serves as a path finder to a post-AIA, Explorer-class missions.

  13. Influence of deep level defects on carrier lifetime in CdZnTe:In

    SciTech Connect (OSTI)

    Guo, Rongrong; Jie, Wanqi Wang, Ning; Zha, Gangqiang; Xu, Yadong; Wang, Tao; Fu, Xu

    2015-03-07

    The defect levels and carrier lifetime in CdZnTe:In crystal were characterized with photoluminescence, thermally stimulated current measurements, as well as contactless microwave photoconductivity decay (MWPCD) technique. An evaluation equation to extract the recombination lifetime and the reemission time from MWPCD signal is developed based on Hornbeck-Haynes trapping model. An excellent agreement between defect level distribution and carrier reemission time in MWPCD signal reveals the tail of the photoconductivity decay is controlled by the defect level reemission effect. Combining {sup 241}Am gamma ray radiation response measurement and laser beam induced transient current measurement, it predicted that defect level with the reemission time shorter than the collection time could lead to better charge collection efficiency of CdZnTe detector.

  14. Photoluminescence Imaging of Large-Grain CdTe for Grain Boundary Characterization

    SciTech Connect (OSTI)

    Johnston, Steve; Allende Motz, Alyssa; Reese, Matthew O.; Burst, James M.; Metzger, Wyatt K.

    2015-06-14

    In this work, we use photoluminescence (PL) imaging to characterize CdTe grain boundary recombination. We use a silicon megapixel camera and green (532 nm) laser diodes for excitation. A microscope objective lens system is used for high spatial resolution and a field of view down to 190 um x 190 um. PL images of large-grain (5 to 50 um) CdTe samples show grain boundary and grain interior features that vary with processing conditions. PL images of samples in the as-deposited state show distinct dark grain boundaries that suggest high excess carrier recombination. A CdCl2 treatment leads to PL images with very little distinction at the grain boundaries, which illustrates the grain boundary passivation properties. Other process conditions are also shown, along with comparisons of PL images to high spatial resolution time-resolved PL carrier lifetime maps.

  15. Fabrication of fluorescent composite with ultrafast aqueous synthesized high luminescent CdTe quantum dots

    SciTech Connect (OSTI)

    Zhang, Lei, E-mail: mejswu@ust.hk; Chen, Haibin, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk; Wu, Jingshen, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk [Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Hong Kong and Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong); Bi, Xianghong, E-mail: takubatch@gmail.com [Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong)

    2014-05-15

    Without precursor preparation, inert gas protection and enormous amount of additives and reductants, CdTe quantum dots (QDs) can be rapidly synthesized with high quality. A 600 nm photoluminescence peak wavelength could be obtained within 1 hour's refluxing through minimal addition of 1,2-diaminoethane (DAE). The theoretical design for the experiments are illustrated and further proved by the characterization results with different concentrations and reagents. On the other hand, generation of CdTe QDs was found even under room temperature by applying droplet quantity of DAE. This indicates that QDs can be synthesized with simply a bottle and no enormous additives required. The QDs were mixed into the epoxy matrix through solution casting method with cetyltrimethylammonium (CTA) capping for phase transfer. The acquired epoxy based nanocomposite exhibits good transparency, compatibility and fluorescence.

  16. Diffusion-Reaction Modeling of Cu Migration in CdTe Solar Devices

    SciTech Connect (OSTI)

    Guo, Da; Brinkman, Daniel; Fang, Tian; Akis, Richard; Sankin, Igor; Vasileska, Dragica; Ringhofer, Christian

    2015-09-04

    In this work, we report on development of one-dimensional (1D) finite-difference and two-dimensional (2D) finite-element diffusion-reaction simulators to investigate mechanisms behind Cu-related metastabilities observed in CdTe solar cells [1]. The evolution of CdTe solar cells performance has been studied as a function of stress time in response to the evolution of associated acceptor and donor states. To achieve such capability, the simu-lators solve reaction-diffusion equations for the defect states in time-space domain self-consistently with the free carrier transport. Re-sults of 1-D and 2-D simulations have been compared to verify the accuracy of solutions.

  17. Broadening of optical transitions in polycrystalline CdS and CdTe thin films

    SciTech Connect (OSTI)

    Li Jian; Chen Jie; Collins, R. W.

    2010-11-01

    The dielectric functions {epsilon} of polycrystalline CdS and CdTe thin films sputter deposited onto Si wafers were measured from 0.75 to 6.5 eV by in situ spectroscopic ellipsometry. Differences in {epsilon} due to processing variations are well understood using an excited carrier scattering model. For each sample, a carrier mean free path {lambda} is defined that is found to be inversely proportional to the broadening of each of the band structure critical points (CPs) deduced from {epsilon}. The rate at which broadening occurs with {lambda}{sup -1} is different for each CP, enabling a carrier group speed {upsilon}{sub g} to be identified for the CP. With the database for {upsilon}{sub g}, {epsilon} can be analyzed to evaluate the quality of materials used in CdS/CdTe photovoltaic heterojunctions.

  18. Right-Handed Neutrinos and the 2 TeV $W'$ Boson

    SciTech Connect (OSTI)

    Coloma, Pilar; Dobrescu, Bogdan A.; Lopez-Pavon, Jacobo

    2015-12-30

    The CMS e+e-jj events of invariant mass near 2 TeV are consistent with a W' boson decaying into an electron and a right-handed neutrino whose TeV-scale mass is of the Dirac type. We show that the Dirac partner of the right-handed electron-neutrino can be the right-handed tau-neutrino. Furthermore, a prediction of this model is that the sum of the τ+e+jj and τ-e-jj signal cross sections equals twice that for e+e-jj. The Standard Model neutrinos acquire Majorana masses and mixings compatible with neutrino oscillation data.

  19. Search for Dijet Resonances in 7 TeV pp Collisions at CMS

    SciTech Connect (OSTI)

    Khachatryan, V.; et al.

    2010-11-01

    A search for narrow resonances in the dijet mass spectrum is performed using data corresponding to an integrated luminosity of 2.9 inverse pb collected by the CMS experiment at the LHC. Upper limits at the 95% confidence level (CL) are presented on the product of the resonance cross section, branching fraction into dijets, and acceptance, separately for decays into quark-quark, quark-gluon, or gluon-gluon pairs. The data exclude new particles predicted in the following models at the 95% CL: string resonances, with mass less than 2.50 TeV, excited quarks, with mass less than 1.58 TeV, and axigluons, colorons, and E_6 diquarks, in specific mass intervals. This extends previously published limits on these models.

  20. Higgs mass from compositeness at a multi-TeV scale

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Cheng, Hsin -Chia; Dobrescu, Bogdan A.; Gu, Jiayin

    2014-08-18

    Within composite Higgs models based on the top seesaw mechanism, we show that the Higgs field can arise as the pseudo Nambu-Goldstone boson of the broken U(3)more » $$_{L}$$ chiral symmetry associated with a vector-like quark and the t-b doublet. As a result, the lightest CP-even neutral state of the composite scalar sector is lighter than the top quark, and can be identified as the newly discovered Higgs boson. As a result, constraints on weak-isospin violation push the chiral symmetry breaking scale above a few TeV, implying that other composite scalars are probably too heavy to be probed at the LHC, but may be within reach at a future hadron collider with center-of-mass energy of about 100 TeV.« less

  1. Anti pp searches for quark-gluon plasma at TeV I

    SciTech Connect (OSTI)

    Turkot, F.

    1986-06-01

    Three experiments that have been approved to run at TeV I are discussed from the viewpoint of their capability to search for evidence of the QCD phase transition in proton-antiproton collisions at 1.6 TeV. One of these experiments, E-735, was proposed as a dedicated search for quark-gluon plasma effects with a detector designed to study large total E/sub T/, low P/sub T/ individual particles. The other two, E-741 (CDF) and E-740 (DO), embody general purpose four-pi detectors designed primarily to study the physics of W and Z bosons and other large P/sub T/ phenomena. The detectors and their quark-gluon plasma signals are compared. 8 refs., 6 figs., 4 tabs. (LEW)

  2. Novel Approaches to Wide Bandgap CuInSe2 Based Absorbers

    SciTech Connect (OSTI)

    William N. Shafarman

    2011-04-28

    This project targeted the development of high performance wide bandgap solar cells based on thin film alloys of CuInSe2 to relax constraints on module design and enable tandem solar cell structures. This addressed goals of the Solar Energy Technologies Program for Next Generation PV to develop technology needed for higher thin film module efficiency as a means to reduce costs. Specific objectives of the research project were: 1) to develop the processes and materials required to improve the performance of wide bandgap thin film solar cells based on alloys of CuInSe2, and 2) to provide the fundamental science and engineering basis for the material, electronic, and device properties required to effectively apply these processes and materials to commercial manufacture. CuInSe2-based photovoltaics have established the highest efficiencies of the thin film materials at both the cell and module scales and are actively being scaled up to commercialization. In the highest efficiency cells and modules, the optical bandgap, a function of the CuInSe2-based alloy composition, is relatively low compared to the optimum match to the solar spectrum. Wider bandgap alloys of CuInSe2 produce higher cell voltages which can improve module performance and enable the development of tandem solar cells to boost the overall efficiency. A focus for the project was alloying with silver to form (AgCu)(InGa)Se2 pentenary thin films deposited by elemental co-evaporation which gives the broadest range of control of composition and material properties. This alloy has a lower melting temperature than Ag-free, Cu-based chalcopyrite compounds, which may enable films to be formed with lower defect densities and the (AgCu)(InGa)Se2 films give improved material properties and better device performance with increasing bandgap. A comprehensive characterization of optical, structural, and electronic properties of (AgCu)(InGa)Se2 was completed over the complete compositional range 0 ≤ Ga/(In+Ga) ≤ 1 and

  3. Dijet Azimuthal Decorrelations in pp Collisions at sqrt(s) = 7 TeV

    SciTech Connect (OSTI)

    Khachatryan, Vardan; et al.

    2011-03-01

    Measurements of dijet azimuthal decorrelations in pp collisions at sqrt(s) = 7 TeV using the CMS detector at the CERN LHC are presented. The analysis is based on an inclusive dijet event sample corresponding to an integrated luminosity of 2.9 inverse picobarns. The results are compared to predictions from perturbative QCD calculations and various Monte Carlo event generators. The dijet azimuthal distributions are found to be sensitive to initial-state gluon radiation.

  4. Background limited mid-infrared photodetection with photovoltaic HgTe colloidal quantum dots

    SciTech Connect (OSTI)

    Guyot-Sionnest, Philippe Roberts, John Andris

    2015-12-21

    The photovoltaic response of thin films of HgTe colloidal quantum dots in the 3–5 μm range is observed. With no applied bias, internal quantum efficiency exceeding 40%, specific detectivity above 10{sup 10} Jones and microseconds response times are obtained at 140 K. The cooled devices detect the ambient thermal radiation. A detector with 5.25 μm cut-off achieves Background Limited Infrared Photodetection at 90 K.

  5. Quantum oscillations in magnetothermopower measurements of topological insulator Bi2Te3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qu, Dong -Xia; Hor, Y. S.; Cava, R. J.

    2012-12-10

    We report the magnetothermopower measurements of the nonmetallic topological insulator Bi2Te3 in magnetic fields up to 35 T. Quantum oscillations arising from surface states are observed in both thermoelectric and conductivity tensors. The inferred surface thermopower has a peak magnitude ~1 mV/K possibly as a result of surface electron and bulk phonon interaction. At the n = 1 Landau level, we resolve additional quantum oscillations signaling Landau sublevels.

  6. Theoretical Studies of TE-Wave Propagation as a Diagnostic for Electron Cloud

    SciTech Connect (OSTI)

    Penn, Gregory E; Vay, Jean-Luc

    2010-05-17

    The propagation of TE waves is sensitive to the presence of an electron cloud primarily through phase shifts generated by the altered dielectric function, but can also lead to polarization changes and other effects, especially in the presence of magnetic fields. These effects are studied theoretically and also through simulations using WARP. Examples are shown related to CesrTA parameters, and used to observe different regimes of operation as well as to validate estimates of the phase shift.

  7. Beauty production cross section measurements at E(cm) = 1.96-TeV

    SciTech Connect (OSTI)

    D'Onofrio, Monica; /Geneva U.

    2005-05-01

    The RunII physics program at the Tevatron started in spring 2001 with protons and antiprotons colliding at an energy of {radical}s = 1.96 TeV, and it is carrying on with more than 500 pb{sup -1} of data as collected by both the CDF and D0 experiments. Recent results on beauty production cross section measurements are here reported.

  8. New acceptor centers of the background impurities in p-CdZnTe

    SciTech Connect (OSTI)

    Plyatsko, S. V. Rashkovetskyi, L. V.

    2013-07-15

    Low-temperature photoluminescence data are used to study the redistribution of the background impurities and host components of p-CdZnTe single crystals with a resistivity of 1-50 {Omega} cm upon their interaction with infrared laser radiation. The effect of widening of the band gap and the formation of new acceptor centers in response to laser-stimulated changes in the system of intrinsic defects are established. The activation energy of the new acceptor centers is determined.

  9. Magnetic order tuned by Cu substitution in Fe1.1–zCuzTe

    SciTech Connect (OSTI)

    Wen, Jinsheng; Xu, Zhijun; Xu, Guangyong; Lumsden, M. D.; Valdivia, P. N.; Bourret-Courchesne, E.; Gu, Genda; Lee, Dung-Hai; Tranquada, J. M.; Birgeneau, R. J.

    2012-07-02

    We study the effects of Cu substitution in Fe₁.₁Te, the nonsuperconducting parent compound of the iron-based superconductor, Fe₁₊yTe₁₋xSex, utilizing neutron scattering techniques. It is found that the structural and magnetic transitions, which occur at ~60 K without Cu, are monotonically depressed with increasing Cu content. By 10% Cu for Fe, the structural transition is hardly detectable, and the system becomes a spin glass below 22 K, with a slightly incommensurate ordering wave vector of (0.5–δ, 0, 0.5) with δ being the incommensurability of 0.02, and correlation length of 12 Å along the a axis and 9 Å along the c axis. With 4% Cu, both transition temperatures are at 41 K, though short-range incommensurate order at (0.42, 0, 0.5) is present at 60 K. With further cooling, the incommensurability decreases linearly with temperature down to 37 K, below which there is a first-order transition to a long-range almost-commensurate antiferromagnetic structure. A spin anisotropy gap of 4.5 meV is also observed in this compound. Our results show that the weakly magnetic Cu has a large effect on the magnetic correlations; it is suggested that this is caused by the frustration of the exchange interactions between the coupled Fe spins.

  10. Search for new particles decaying to diject in 7 TeV proton-proton collisions at CMS

    SciTech Connect (OSTI)

    Ozturk, Sertac; /Cukurova U.

    2011-03-01

    This thesis presents a measurement of the dijet invariant mass spectrum and search for new particles decaying to dijets at CMS in 7 TeV pp collisions using data corresponding to an integrated luminosity of 2.875 pb{sup -1}. The measured dijet mass distribution is compared to QCD prediction from PYTHIA . It is required the pseudorapidity separation of the two jets to satisfy |Dh| < 1.3 with each jet inside the region of |{eta}| < 2.5. The observed dijet mass spectrum is fitted by a smooth function to search for dijet resonances. Since there is no evidence for dijet resonances, the upper limits at 95% Confidence Level (C.L.) on the resonance cross section are set. These generic cross section limits are compared with theoretical predictions for the cross section for several models of new particles: string resonances, axigluons, colorons, excited quarks, E{sub 6} diquarks, Randall-Sundrum gravitons, W' and Z'. It is excluded at 95% C.L. string resonances in the mass range 0.50 < M(S) < 2.50 TeV, excited quarks in the mass range 0.50 < M(q*) < 1.58 TeV, axigluons and colorons in the mass ranges 0.50 < M(A) < 1.17 TeV and 1.47 < M(A) < 1.52 TeV, and E{sub 6} diquarks in the mass ranges 0.50 < M(D) < 0.58 TeV, 0.97 < M(D) < 1.08 TeV, and 1.45 < M(D) < 1.60 TeV. These exclusions extend previously published limits on all models.

  11. In-situ surface composition measurements of CuGaSe{sub 2} thin films

    SciTech Connect (OSTI)

    Fons, P.; Yamada, A.; Niki, S.; Oyanagi, H.

    1998-12-31

    Two CuGaSe{sub 2} films were grown by molecular beam epitaxy onto GaAs (001) substrates with varying Cu/Ga flux ratios under Se overpressure conditions. Growth was interrupted at predetermined times and the surface composition was measured using Auger electron spectroscopy after which growth was continued. After growth, the film composition was analyzed using voltage dependent electron microprobe spectroscopy. Film structure and morphology were also analyzed using x-ray diffraction and atomic force microscopy. The film with a Cu/Ga ratio larger than unity showed evidence of surface segregation of a second Cu-rich phase with a Cu/Se composition ratio slightly greater than unity. A second CuGaSe{sub 2} film with a Cu/Ga ratio of less than unity showed no change in surface composition with time and was also consistent with bulk composition measurements. Diffraction measurements indicated a high concentration of twins as well as the presence of domains with mixed c and a axes in the Ga-rich film. The Cu-rich films by contrast were single domain and had a narrower mosaics. High sensitivity scans along the [001] reciprocal axis did not exhibit any new peaks not attributable to either the substrate or the CuGaSe{sub 2} thin film.

  12. Electronic structure, irreversibility line and magnetoresistance of Cu0.3Bi2Se3 superconductor

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hemian, Yi; Gu, Genda; Chen, Chao -Yu; Sun, Xuan; Xie, Zhuo -Jin; Feng, Ya; Liang, Ai -Ji; Peng, Ying -Ying; He, Shao -Long; Zhao, Lin; et al

    2015-06-01

    CuxBi2Se3 is a superconductor that is a potential candidate for topological superconductors. We report our laser-based angle-resolved photoemission measurement on the electronic structure of the CuxBi2Se3 superconductor, and a detailed magneto-resistance measurement in both normal and superconducting states. We find that the topological surface state of the pristine Bi2Se3 topological insulator remains robust after the Cu-intercalation, while the Dirac cone location moves downward due to electron doping. Detailed measurements on the magnetic field-dependence of the resistance in the superconducting state establishes an irreversibility line and gives a value of the upper critical field at zero temperature of ~4000 Oe formore » the Cu0.3Bi2Se3 superconductor with a middle point Tc of 1.9K. The relation between the upper critical field Hc2 and temperature T is different from the usual scaling relation found in cuprates and in other kinds of superconductors. Small positive magneto-resistance is observed in Cu0.3Bi2Se3 superconductors up to room temperature. As a result, these observations provide useful information for further study of this possible candidate for topological superconductors.« less

  13. Searching for Neutrinoless Double-Beta Decay of130Te with CUORE

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Artusa, D. R.; Avignone, F. T.; Azzolini, O.; Balata, M.; Banks, T. I.; Bari, G.; Beeman, J.; Bellini, F.; Bersani, A.; Biassoni, M.; et al

    2015-01-01

    Neutrinoless double-beta (0???) decay is a hypothesized lepton-number-violating process that offers the only known means of asserting the possible Majorana nature of neutrino mass. The Cryogenic Underground Observatory for Rare Events (CUORE) is an upcoming experiment designed to search for 0???decay of130Te using an array of 988 TeO2crystal bolometers operated at 10?mK. The detector will contain 206?kg of130Te and have an average energy resolution of 5?keV; the projected 0???decay half-life sensitivity after five years of livetime is 1.6??1026?y at 1?(9.5??1025?y at the 90% confidence level), which corresponds to an upper limit on the effective Majorana massmorein the range 40100?meV (50130?meV). In this paper, we review the experimental techniques used in CUORE as well as its current status and anticipated physics reach.less

  14. High-efficiency, flexible CdTe solar cells on ultra-thin glass substrates

    SciTech Connect (OSTI)

    Mahabaduge, H. P.; Rance, W. L.; Burst, J. M.; Reese, M. O.; Gessert, T. A.; Metzger, W. K.; Barnes, T. M.; Meysing, D. M.; Wolden, C. A.; Li, J.; Beach, J. D.; Garner, S.

    2015-03-30

    Flexible, high-efficiency, low-cost solar cells can enable applications that take advantage of high specific power, flexible form factors, lower installation and transportation costs. Here, we report a certified record efficiency of 16.4% for a flexible CdTe solar cell that is a marked improvement over the previous standard (14.05%). The improvement was achieved by replacing chemical-bath-deposited CdS with sputtered CdS:O and also replacing the high-temperature sputtered ZnTe:Cu back contact layer with co-evaporated and rapidly annealed ZnTe:Cu. We use quantum efficiency and capacitance-voltage measurements combined with device simulations to identify the reasons for the increase in efficiency. Both device simulations and experimental results show that higher carrier density can quantitatively account for the increased open circuit voltage (V{sub OC}) and Fill Factor (FF), and likewise, the increase in short circuit current density (J{sub SC}) can be attributed to the more transparent CdS:O.

  15. Beam extraction from TeV accelerators using channeling in bent crystals

    SciTech Connect (OSTI)

    Carrigan, R.A. Jr.; Toohig, T.E.; Tsyganov, E.N.; Superconducting Super Collider Lab., Dallas, TX; Joint Inst. for Nuclear Research, Dubna )

    1989-08-01

    Bent crystal channeling offers an interesting alternative for beam extraction from trans-GeV accelerators. Conventional extraction employs resonant beam blow-up coupled with electromagnetic beam deflecting channels. It is limited by the length of the available accelerator straight section. Channeling crystals require much less space. A five-step approach to applying crystal extraction in the Superconducting Super Collider (SSC) is discussed. Two steps, extraction from the 8 GeV Dubna Synchrophasotron and the 76 GeV Serpukhov accelerator, have occurred. The next possibility is extraction from a multi-hundred GeV superconducting accelerator. In the nineties the program could continue at UNK (3 TeV) and culminate at the TeV SSC. The possibilities and limitations of crystal extraction are reviewed. More information is needed on dechanneling in bent crystals including the effects of dislocations at TeV energies. Long, dislocation-free'' crystals are required. A more thorough understanding of the theory of crystal extraction is also desirable. 12 refs.

  16. Vacancy structures and melting behavior in rock-salt GeSbTe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhang, Bin; Wang, Xue -Peng; Shen, Zhen -Ju; Li, Xian -Bin; Wang, Chuan -Shou; Chen, Yong -Jin; Li, Ji -Xue; Zhang, Jin -Xing; Zhang, Ze; Zhang, Sheng -Bai; et al

    2016-05-03

    Ge-Sb-Te alloys have been widely used in optical/electrical memory storage. Because of the extremely fast crystalline-amorphous transition, they are also expected to play a vital role in next generation nonvolatile microelectronic memory devices. However, the distribution and structural properties of vacancies have been one of the key issues in determining the speed of melting (or amorphization), phase-stability, and heat-dissipation of rock-salt GeSbTe, which is crucial for its technological breakthrough in memory devices. Using spherical aberration-aberration corrected scanning transmission electron microscopy and atomic scale energy-dispersive X-ray mapping, we observe a new rock-salt structure with high-degree vacancy ordering (or layered-like ordering) atmore » an elevated temperature, which is a result of phase transition from the rock-salt phase with randomly distributed vacancies. First-principles calculations reveal that the phase transition is an energetically favored process. Furthermore, molecular dynamics studies suggest that the melting of the cubic rock-salt phases is initiated at the vacancies, which propagate to nearby regions. The observation of multi-rock-salt phases suggests another route for multi-level data storage using GeSbTe.« less

  17. Search for Neutrinoless Double-Beta Decay of Te130 with CUORE-0

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Alfonso, K.; Artusa, D. R.; Avignone, F. T.; Azzolini, O.; Balata, M.; Banks, T. I.; Bari, G.; Beeman, J. W.; Bellini, F.; Bersani, A.; et al

    2015-09-03

    We report the results of a search for neutrinoless double-beta decay in a 9.8 kg yr exposure of 130Te using a bolometric detector array, CUORE-0. The characteristic detector energy resolution and background level in the region of interest are 5:1± 0:3 keV FWHM and 0:058 ± 0:004 (stat) ± 0:002 (syst) counts / (keV kg yr), respectively. The median 90% C.L. lower-limit half-life sensitivity of the experiment is 2:9x1024 yr and surpasses the sensitivity of previous searches. We find no evidence for neutrinoless double-beta decay of 130Te and place a Bayesian lower bound on the decay half-life, T0ν1/2 > 2.7more » x 1024 yr at 90% C.L. Combining CUORE-0 data with the 19.75 kg yr exposure of 130Te from the Cuoricino experiment we obtain T0ν1/2 > 4.0 x 1024 yr at 90% C.L. (Bayesian), the most stringent limit to date on this half-life. Lastly, using a range of nuclear matrix element estimates we interpret this as a limit on the e ective Majorana neutrino mass, mββ < 270 -760 meV.« less

  18. Searching for Neutrinoless Double-Beta Decay of 130 Te with CUORE

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Artusa, D. R.; Avignone, F. T.; Azzolini, O.; Balata, M.; Banks, T. I.; Bari, G.; Beeman, J.; Bellini, F.; Bersani, A.; Biassoni, M.; et al

    2015-01-01

    Neumore » trinoless double-beta (0 ν β β ) decay is a hypothesized lepton-number-violating process that offers the only known means of asserting the possible Majorana nature of neutrino mass. The Cryogenic Underground Observatory for Rare Events (CUORE) is an upcoming experiment designed to search for 0 ν β β decay of 130 Te using an array of 988 TeO 2 crystal bolometers operated at 10 mK. The detector will contain 206 kg of 130 Te and have an average energy resolution of 5 keV; the projected 0 ν β β decay half-life sensitivity after five years of livetime is 1.6 × 10 26  y at 1 σ (9.5 × 10 25  y at the 90% confidence level), which corresponds to an upper limit on the effective Majorana mass in the range 40–100 meV (50–130 meV). In this paper, we review the experimental techniques used in CUORE as well as its current status and anticipated physics reach.« less

  19. Multiwavelength study of the northeastern outskirts of the extended TeV source HESS J1809193

    SciTech Connect (OSTI)

    Rangelov, Blagoy; Kargaltsev, Oleg; Hare, Jeremy; Volkov, Igor; Posselt, Bettina; Pavlov, George G.

    2014-11-20

    HESS J1809193 is an extended TeV ?-ray source in the Galactic plane. Multiwavelength observations of the HESS J1809193 field reveal a complex picture. We present results from three Chandra X-Ray Observatory and two Suzaku observations of a region in the northeastern outskirts of HESS J1809-193, where enhanced TeV emission has been reported. Our analysis also includes GeV ?-ray and radio data. One of the X-ray sources in the field is the X-ray binary XTE J1810-189, for which we present the outburst history from multiple observatories and confirm that XTE J1810-189 is a strongly variable type I X-ray burster, which can hardly produce TeV emission. We investigate whether there is any connection between the possible TeV extension of HESS J1809193 and the sources seen at lower energies. We find that another X-ray binary candidate, Suzaku J1811-1900, and a radio supernova remnant, SNR G11.40.1, can hardly be responsible for the putative TeV emission. Our multiwavelength classification of fainter X-ray point sources also does not produce a plausible candidate. We conclude that the northeast extension of HESS J1809193, if confirmed by deeper observations, can be considered a dark acceleratora TeV source without a visible counterpart at lower energies.

  20. Ultrathin nanosheets of CrSiTe3. A semiconducting two-dimensional ferromagnetic material

    SciTech Connect (OSTI)

    Lin, Ming -Wei; Zhung, Houlong L.; Yan, Jiaqiang; Ward, Thomas Zac; Puretzky, Alexander A.; Rouleau, Christopher M.; Gai, Zheng; Liang, Liangbo; Meunier, Vincent; Ganesh, Panchapakesan; Kent, Paul R. C.; Sumpter, Bobby G.; Mandrus, David G.; Geohegan, David B.; Xiao, Kai

    2015-11-27

    Finite range ferromagnetism and antiferromagnetism in two-dimensional (2D) systems within an isotropic Heisenberg model at non-zero temperature were originally proposed to be impossible. However, recent theoretical studies using an Ising model have recently shown that 2D magnetic crystals can exhibit magnetism. Experimental verification of existing 2D magnetic crystals in this system has remained elusive. In this work we for the first time exfoliate the CrSiTe3, a bulk ferromagnetic semiconductor, to mono- and few-layer 2D crystals onto a Si/SiO2 substrate. The Raman spectra show the good stability and high quality of the exfoliated flakes, consistent with the computed phonon spectra of 2D CrSiTe3, giving a strong evidence for the existence of 2D CrSiTe3 crystals. When the thickness of the CrSiTe3 crystals is reduced to few-layers, we observed a clear change in resistivity at 80~120 K, consistent with the theoretical calculations on the Curie temperature (Tc) of ~80 K for the magnetic ordering of 2D CrSiTe3 crystals. As a result, the ferromagnetic mono- and few-layer 2D CrSiTe3 indicated here should enable numerous applications in nano-spintronics.

  1. Strong anisotropy and magnetostriction in the two-dimensional Stoner ferromagnet Fe3GeTe2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhuang, Houlong L.; Kent, P. R. C.; Hennig, Richard G.

    2016-04-06

    Comore » mputationally characterizing magnetic properies of novel two-dimensional (2D) materials serves as an important first step of exploring possible applications. Using density-functional theory, we show that single-layer Fe3GeTe2 is a potential 2D material with sufficiently low formation energy to be synthesized by mechanical exfoliation from the bulk phase with a van der Waals layered structure. In addition, we calculated the phonon dispersion demonstrating that single-layer Fe3GeTe2is dynamically stable. Furthermore, we find that similar to the bulk phase, 2D Fe3GeTe2 exhibits amagnetic moment that originates from a Stoner instability. In contrast to other 2D materials, we find that single-layer Fe3GeTe2 exhibits a significant uniaxial magnetocrystalline anisotropy energy of 920μ eV per Fe atom originating from spin-orbit coupling. In conclusion, we show that applying biaxial tensile strains enhances the anisotropy energy, which reveals strong magnetostriction in single-layer Fe3GeTe2 with a sizable magneostrictive coefficient. Our results indicate that single-layer Fe3GeTe2 is potentially useful for magnetic storage applications.« less

  2. Substitution of Ni for Fe in superconducting Fe0.98Te0.5Se0.5 depresses the normal-state conductivity but not the magnetic spectral weight

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Jinghui; Zhong, Ruidan; Li, Shichao; Gan, Yuan; Xu, Zhijun; Zhang, Cheng; Ozaki, T.; Matsuda, M.; Zhao, Yang; Li, Qiang; et al

    2015-01-05

    We have performed systematic resistivity and inelastic neutron scattering measurements on Fe₀.₉₈₋zNizTe₀.₅Se₀.₅ samples to study the impact of Ni substitution on the transport properties and the low-energy (≤ 12 meV) magnetic excitations. It is found that, with increasing Ni doping, both the conductivity and superconductivity are gradually suppressed; in contrast, the low-energy magnetic spectral weight changes little. Comparing with the impact of Co and Cu substitution, we find that the effects on conductivity and superconductivity for the same degree of substitution grow systematically as the atomic number of the substituent deviates from that of Fe. The impact of the substituentsmore » as scattering centers appears to be greater than any contribution to carrier concentration. The fact that low-energy magnetic spectral weight is not reduced by increased electron scattering indicates that the existence of antiferromagnetic correlations does not depend on electronic states close to the Fermi energy.« less

  3. Advanced processing technology for high-efficiency, thin-film CuInSe{sub 2} and CdTe solar cells. Annual subcontract report, 1 March 1993--28 February 1994

    SciTech Connect (OSTI)

    Morel, D.L.; Ferekides, C.S.

    1994-07-01

    This annual report details activities in research on advanced processing technology for high-effiency, thin-film solar cells.

  4. Topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te thin films on SrTiO{sub 3} (001) with tunable Fermi levels

    SciTech Connect (OSTI)

    Guo, Hua; Liu, Jun-Wei; Wang, Zhen-Yu; Wu, Rui; Ji, Shuai-Hua; Duan, Wen-Hui; Chen, Xi Xue, Qi-Kun; Yan, Chen-Hui; Zhang, Zhi-Dong; Wang, Li-Li; He, Ke; Ma, Xu-Cun

    2014-05-01

    In this letter, we report a systematic study of topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te (0 < x < 1) thin films grown by molecular beam epitaxy on SrTiO{sub 3}(001). Two domains of Pb{sub x}Sn{sub 1-x}Te thin films with intersecting angle of ? ? 45 were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES). ARPES study of Pb{sub x}Sn{sub 1-x}Te thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of Pb{sub x}Sn{sub 1-x}Te thin films.

  5. Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix

    SciTech Connect (OSTI)

    Gruzintsev, A. N. Emelchenko, G. A.; Masalov, V. M.; Yakimov, E. E.; Barthou, C.; Maitre, A.

    2009-02-15

    The effect of the photonic band gap in the photonic crystal, the synthesized SiO{sub 2} opal with embedded CdSe/ZnS quantum dots, on its luminescence in the visible spectral region is studied. It is shown that the position of the photonic band gap in the luminescence and reflectance spectra for the infiltrated opal depends on the diameter of the constituent nanospheres and on the angle of recording the signal. The optimal conditions for embedding the CdSe/ZnS quantum dots from the solution into the opal matrix are determined. It is found that, for the opal-CdSe/ZnS nanocomposites, the emission intensity decreases and the luminescence decay time increases in the spatial directions, in which the spectral positions of the photonic band gap and the luminescence peak of the quantum dots coincide.

  6. A Novel and Functional Single-Layer Sheet of ZnSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhou, Jia; Sumpter, Bobby G.; Kent, Paul R. C.; Huang, Jingsong

    2014-12-23

    In this Communication, we report a novel singlelayer sheet of ZnSe, with a three-atomic thickness, which demonstrates a strong quantum confinement effect by exhibiting a large blue shift of 2.0 eV in its absorption edge relative to the zinc blende (ZB) bulk phase. Theoretical optical absorbance shows that the largest absorption of this ultrathin single-layer sheet of ZnSe occurs at a wavelength similar to its four-atom-thick doublelayer counterpart but with higher photoabsorption efficiency, suggesting a superior behavior on incident photon-to-current conversion efficiency for solar water splitting, among other potential applications. The results presented herein for ZnSe may be generalized tomore » other group II-VI analogues.« less

  7. Assessment of the SE2-ANL code using EBR-II temperature measurements

    SciTech Connect (OSTI)

    Yang, W.S.; Yacout, A.M.

    1995-01-01

    The SE2-ANL code is a modified version of the SUPERENERGY-2 code [1]. This code is used at Argonne National Laboratory (ANL) to compute the core-wide temperature profiles in Liquid Metal Reactor (LMR) cores. The accuracy of this code has recently been tested by comparing the predicted temperatures with measured values in the Experimental Breeder Reactor R (EBR-II). The detailed temperature distributions in two experimental subassemblies and the mixed mean subassembly outlet temperatures were used in this validation study. The SE2-ANL predictions were found to agree well with measured values. It was also found that SE2-ANL yields results with accuracy comparable to the more detailed COBRA-WC [2] calculations at much lower computational cost.

  8. Charge-transfer dynamics in multilayered PbS and PbSe quantum dot architectures

    SciTech Connect (OSTI)

    Xu, F.; Ma, X.; Haughn, C. R.; Doty, M. F.; Cloutier, S. G.

    2014-02-03

    We demonstrate control of the charge transfer process in PbS and PbSe quantum dot assemblies. We first demonstrate efficient charge transfer from donor quantum dots to acceptor quantum dots in a multi-layer PbSe cascade structure. Then, we assemble type-I and type-II heterostructures using both PbS and PbSe quantum dots via careful control of the band alignment. In type-I structures, photo-generated carriers are transferred and localized in the smaller bandgap (acceptor) quantum dots, resulting in a significant luminescence enhancement. In contrast, a significant luminescence quenching and shorter emission lifetime confirms an efficient separation of photo-generated carriers in the type-II architecture.

  9. Search for resonances and quantum black holes using dijet mass spectra in proton-proton collisions at sqrt(s)=8 TeV

    SciTech Connect (OSTI)

    Khachatryan, V.; et al.,

    2015-03-01

    A search for resonances and quantum black holes is performed using the dijet mass spectra measured in proton-proton collisions at sqrt(s)=8 TeV with the CMS detector at the LHC. The data set corresponds to an integrated luminosity of 19.7 inverse femtobarns. In a search for narrow resonances that couple to quark-quark, quark-gluon, or gluon-gluon pairs, model-independent upper limits, at 95% confidence level, are obtained on the production cross section of resonances, with masses above 1.2 TeV. When interpreted in the context of specific models the limits exclude: string resonances with masses below 5.0 TeV; excited quarks below 3.5 TeV; scalar diquarks below 4.7 TeV; W' bosons below 1.9 TeV or between 2.0 and 2.2 TeV; Z' bosons below 1.7 TeV; and Randall-Sundrum gravitons below 1.6 TeV. A separate search is conducted for narrow resonances that decay to final states including b quarks. The first exclusion limit is set for excited b quarks, with a lower mass limit between 1.2 and 1.6 TeV depending on their decay properties. Searches are also carried out for wide resonances, assuming for the first time width-to-mass ratios up to 30%, and for quantum black holes with a range of model parameters. The wide resonance search excludes axigluons and colorons with mass below 3.6 TeV, and color-octet scalars with mass below 2.5 TeV. Lower bounds between 5.0 and 6.3 TeV are set on the masses of quantum black holes.

  10. Two-step growth of two-dimensional WSe2/MoSe2 heterostructures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gong, Yongji; Lei, Sidong; Lou, Jun; Liu, Zheng; Vajtai, Robert; Zhou, Wu; Ajayan, Pullikel M.; Ye, Gonglan; Li, Bo; He, Yongmin; et al

    2015-08-03

    Two dimensional (2D) materials have attracted great attention due to their unique properties and atomic thickness. Although various 2D materials have been successfully synthesized with different optical and electrical properties, a strategy for fabricating 2D heterostructures must be developed in order to construct more complicated devices for practical applications. Here we demonstrate for the first time a two-step chemical vapor deposition (CVD) method for growing transition-metal dichalcogenide (TMD) heterostructures, where MoSe2 was synthesized first and followed by an epitaxial growth of WSe2 on the edge and on the top surface of MoSe2. Compared to previously reported one-step growth methods, thismore » two-step growth has the capability of spatial and size control of each 2D component, leading to much larger (up to 169 μm) heterostructure size, and cross-contamination can be effectively minimized. Furthermore, this two-step growth produces well-defined 2H and 3R stacking in the WSe2/MoSe2 bilayer regions and much sharper in-plane interfaces than the previously reported MoSe2/WSe2 heterojunctions obtained from one-step growth methods. The resultant heterostructures with WSe2/MoSe2 bilayer and the exposed MoSe2 monolayer display rectification characteristics of a p-n junction, as revealed by optoelectronic tests, and an internal quantum efficiency of 91% when functioning as a photodetector. As a result, a photovoltaic effect without any external gates was observed, showing incident photon to converted electron (IPCE) efficiencies of approximately 0.12%, providing application potential in electronics and energy harvesting.« less

  11. Orbital alignment at the internal interface of arylthiol functionalized CdSe molecular hybrids

    SciTech Connect (OSTI)

    Li, Zhi; Schlaf, Rudy; Mazzio, Katherine A.; Okamoto, Ken; Luscombe, Christine K.

    2015-04-21

    Organic-inorganic nanoparticle molecular hybrid materials are interesting candidates for improving exciton separation in organic solar cells. The orbital alignment at the internal interface of cadmium selenide (ArS-CdSe) hybrid materials functionalized with covalently attached arylthiolate moieties was investigated through X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS). A physisorbed interface between arylthiol (ArSH) ligands and CdSe nanoparticles was also investigated for comparison. This interface was created via a multi-step thin film deposition procedure in-vacuo, where the surface was characterized after each experimental step. This enabled the direct comparison of ArSH/CdSe interfaces produced via physisorption and ArS-CdSe covalently attached hybrid materials, which rely on a chemical reaction for their synthesis. All material depositions were performed using an electrospray deposition, which enabled the direct injection of solution-originating molecular species into the vacuum system. This method allows XPS and UPS measurements to be performed immediately after deposition without exposure to the atmosphere. Transmission electron microscopy was used to determine the morphology and particle size of the deposited materials. Ultraviolet-visible spectroscopy was used to estimate the optical band gap of the CdSe nanoparticles and the HOMO-LUMO gap of the ArSH ligands. These experiments showed that hybridization via covalent bonds results in an orbital realignment at the ArSH/CdSe interface in comparison to the physisorbed interface. The orbital alignment within the hybrid caused a favorable electron injection barrier, which likely facilitates exciton-dissociation while preventing charge-recombination.

  12. Tuning thermoelectricity in a Bi2Se3 topological insulator via varied film thickness

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Guo, Minghua; Wang, Zhenyu; Xu, Yong; Huang, Huaqing; Zang, Yunyi; Liu, Chang; Duan, Wenhui; Gan, Zhongxue; Zhang, Shou-Cheng; He, Ke; et al

    2016-01-12

    We report thermoelectric transport studies on Bi2Se3 topological insulator thin films with varied thickness grown by molecular beam epitaxy. We find that the Seebeck coefficient and thermoelectric power factor decrease systematically with the reduction of film thickness. These experimental observations can be explained quantitatively by theoretical calculations based on realistic electronic band structure of the Bi2Se3 thin films. Lastly, this work illustrates the crucial role played by the topological surface states on the thermoelectric transport of topological insulators, and sheds new light on further improvement of their thermoelectric performance.

  13. Direct Observation of Energy-Gap Scaling Law in CdSe Quantum Dots with Positrons

    SciTech Connect (OSTI)

    Denison, Arthur Blanchard; Weber, M. H.; Lynn, K. G.; Barbiellini, B.; Sterne, P. A.

    2002-07-01

    CdSe quantum dot samples with sizes in the range of 1.8~6 nm in diameter were examined by positron annihilation spectroscopy. The results were compared to data obtained for single-crystal bulk CdSe. Evidence is provided that the positrons annihilate within the nanospheres. The annihilation line shape shows a smearing at the boundary of the Jones zone proportional to the widening of the band gap due to a reduction in the size of the quantum dots. The data confirm that the change in the band gap is inversely proportional to the square of the quantum dot diameter.

  14. Structural peculiarities and Raman spectra of TeO{sub 2}/WO{sub 3}-based glasses: A fresh look at the problem

    SciTech Connect (OSTI)

    Mirgorodsky, Andreie; Colas, Maggy; Smirnov, Mikhael; Merle-Mejean, Therese; El-Mallawany, Raouf; Thomas, Philippe

    2012-06-15

    Ideas currently dominating the field of structural studies of TeO{sub 2}-based glasses are critically considered. A new physically and chemically consistent approach to the constitution of binary TeO{sub 2}-WO{sub 3} glasses is proposed, in which the reasoning coming from the Raman spectra reexamination are correlated with the basic principles of thermodynamics. Separation into two phases is suggested in such glasses. One phase is TeO{sub 2}, and another is Te(WO{sub 4}){sub 2} consisting of tetrahedral [WO{sub 4}]{sup 2-} anions and of Te{sup 4+} cations. Supplementary M{sub n}O{sub k} oxides added to the glasses are found incorporated in the former phase, thus producing solid solutions (for M=Ti, Nb) or tellurite compounds (for M=Nd). - Graphical abstract: Raman scattering spectra of TeO{sub 2}-based glasses with the following compositions (mol%): (a) pure TeO{sub 2}, (b) 85TeO{sub 2}-15WO{sub 3}, (c) 80TeO{sub 2}-15WO{sub 3}-5TiO{sub 2} ,(d) 80TeO{sub 2}-10WO{sub 3}-5TiO{sub 2}-5Nb{sub 2}O{sub 5}, (e) 80TeO{sub 2}-12WO{sub 3}-5TiO{sub 2}-3 Nd{sub 2}O{sub 3}, (f) 80TeO{sub 2}-10WO{sub 3}-5TiO{sub 2}-5Nd{sub 2}O{sub 3}. Highlights: Black-Right-Pointing-Pointer Structural studies of TeO{sub 2}-WO{sub 3} glasses are critically considered. Black-Right-Pointing-Pointer The oxide glass formation is analyzed from Raman spectra and thermodynamic principles. Black-Right-Pointing-Pointer Separation into two phases, TeO{sub 2} and Te(WO{sub 4}){sub 2}, is intrinsic in such glasses. Black-Right-Pointing-Pointer TiO{sub 2} or Nb{sub 2}O{sub 5} addition to TeO{sub 2}-WO{sub 3} glasses leads to produce solid solutions. Black-Right-Pointing-Pointer Nd{sub 2}O{sub 3} addition to TeO{sub 2}-WO{sub 3} glasses leads to produce a tellurite compound.

  15. Optical studies of carriers’ vertical transport in the alternately-strained ZnS{sub 0.4}Se{sub 0.6}/CdSe superlattice

    SciTech Connect (OSTI)

    Evropeytsev, E. A. Sorokin, S. V.; Gronin, S. V.; Sedova, I. V.; Klimko, G. V.; Ivanov, S. V.; Toropov, A. A.

    2015-03-15

    We present the results of theoretical modelling and experimental optical studies of the alternatively-strained CdSe/ZnS{sub y}Se{sub 1−y} (y = 0.4) superlattice (SL) with effective band-gap E{sub g}{sup eff} ∼ 2.580 eV and a thickness of ∼300 nm, which was grown by molecular-beam epitaxy on a GaAs substrate. The thicknesses and composition of the layers of the superlattice are determined on the basis of the SL minibands parameters calculated implying both full lattice matching of the SL as a whole to a GaAs substrate and high efficiency of photoexcited carriers transport along the growth axis. Photoluminescence studies of the transport properties of the structure (including a superlattice with one enlarged quantum well) show that the characteristic time of the diffusion of charge carriers at 300 K is shorter than the times defined by recombination processes. Such superlattices seem to be promising for the formation of a wide-gap photoactive region in a multijunction solar cell, which includes both III–V and II–VI compounds.

  16. Ordering mechanism of stacked CdSe/ZnS{sub x}Se{sub 1-x} quantum dots: A combined reciprocal-space and real-space approach

    SciTech Connect (OSTI)

    Schmidt, Th.; Roventa, E.; Clausen, T.; Flege, J. I.; Alexe, G.; Rosenauer, A.; Hommel, D.; Falta, J.; Bernstorff, S.; Kuebel, C.

    2005-11-15

    The vertical and lateral ordering of stacked CdSe quantum dot layers embedded in ZnS{sub x}Se{sub 1-x} has been investigated by means of grazing incidence small angle x-ray scattering and transmission electron microscopy. Different growth parameters have been varied in order to elucidate the mechanisms leading to quantum dot correlation. From the results obtained for different numbers of quantum dot layers, we conclude on a self-organized process which leads to increasing ordering for progressive stacking. The dependence on the spacer layer thickness indicates that strain induced by lattice mismatch drives the ordering process, which starts to break down for too thick spacer layers in a thickness range from 45 to 80 A. Typical quantum dot distances in a range from about 110 to 160 A have been found. A pronounced anisotropy of the quantum dot correlation has been observed, with the strongest ordering along the [110] direction. Since an increased ordering is found with increasing growth temperature, the formation of stacking faults as an additional mechanism for quantum dot alignment can be ruled out.

  17. Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization

    DOE Patents [OSTI]

    Tuttle, J.R.; Contreras, M.A.; Noufi, R.; Albin, D.S.

    1994-10-18

    Enhanced quality thin films of Cu[sub w](In,Ga[sub y])Se[sub z] for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu[sub x]Se on a substrate to form a large-grain precursor and then converting the excess Cu[sub x]Se to Cu(In,Ga)Se[sub 2] by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)[sub y]Se[sub z]. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300--600 C, where the Cu(In,Ga)Se[sub 2] remains solid, while the excess Cu[sub x]Se is in a liquid flux. The characteristic of the resulting Cu[sub w](In,Ga)[sub y]Se[sub z] can be controlled by the temperature. Higher temperatures, such as 500--600 C, result in a nearly stoichiometric Cu(In,Ga)Se[sub 2], whereas lower temperatures, such as 300--400 C, result in a more Cu-poor compound, such as the Cu[sub z](In,Ga)[sub 4]Se[sub 7] phase. 7 figs.

  18. Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization

    DOE Patents [OSTI]

    Tuttle, John R.; Contreras, Miguel A.; Noufi, Rommel; Albin, David S.

    1994-01-01

    Enhanced quality thin films of Cu.sub.w (In,Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In,Ga)Se.sub.2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In,Ga)Se.sub.2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In,Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In,Ga)Se.sub.2, whereas lower temperatures, such as 300.degree.-400.degree. C., result in a more Cu-poor compound, such as the Cu.sub.z (In,Ga).sub.4 Se.sub.7 phase.

  19. Search for New Phenomena in Dijet Angular Distributions in Proton-Proton Collisions at s = 8 TeV Measured with the ATLAS Detector

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Aad, G.; Abbott, B.; Abdallah, J.; Abdinov, O.; Aben, R.; Abolins, M.; AbouZeid, O. S.; Abramowicz, H.; Abreu, H.; Abreu, R.; et al

    2015-06-04

    A search for new phenomena in LHC proton-proton collisions at a center-of-mass energy of √s=8 TeV was performed with the ATLAS detector using an integrated luminosity of 17.3 fb⁻¹. The angular distributions are studied in events with at least two jets; the highest dijet mass observed is 5.5 TeV. All angular distributions are consistent with the predictions of the standard model. In a benchmark model of quark contact interactions, a compositeness scale below 8.1 TeV in a destructive interference scenario and 12.0 TeV in a constructive interference scenario is excluded at 95% C.L.; median expected limits are 8.9 TeV formore » the destructive interference scenario and 14.1 TeV for the constructive interference scenario.« less

  20. Material and detector properties of cadmium manganese telluride (Cd1-xMnxTe) crystals grown by the modified floating-zone method

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hossain, A.; Gu, G. D.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Roy, U. N.; Yang, G.; Liu, T.; Zhong, R.; Schneelock, J.; et al

    2014-12-24

    We demonstrated the material- and radiation-detection properties of cadmium manganese telluride (Cd1-xMnxTe; x=0.06), a wide-band-gap semiconductor crystal grown by the modified floating-zone method. We investigated the presence of various bulk defects, such as Te inclusions, twins, and dislocations of several as-grown indium-doped Cd1-xMnxTe crystals using different techniques, viz., IR transmission microscopy, and chemical etching. We then fabricated four planar detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Thus, our experimental results show that CMT crystals grown by the modified floating zone method apparently are free from Te inclusions. However,more » we still need to optimize our growth parameters to attain high-resistivity, large-volume single-crystal CdMnTe.« less

  1. Molecular beam epitaxial growth of Bi{sub 2}Se{sub 3} nanowires and nanoflakes

    SciTech Connect (OSTI)

    Knebl, G. M. Gessler, J. R.; Kamp, M.; Höfling, S.

    2014-09-29

    Topological Insulators are in focus of immense research efforts and rapid scientific progress is obtained in that field. Bi{sub 2}Se{sub 3} has proven to be a topological insulator material that provides a large band gap and a band structure with a single Dirac cone at the Γ-point. This makes Bi{sub 2}Se{sub 3} one of the most promising three dimensional topological insulator materials. While Bi{sub 2}Se{sub 3} nanowires and nanoflakes so far were fabricated with different methods and for different purposes, we here present the first Bi{sub 2}Se{sub 3} nanowires as well as nanoflakes grown by molecular beam epitaxy. The nanostructures were nucleated on pretreated, silicon (100) wafers. Altering the growth conditions nanoflakes could be fabricated instead of nanowires; both with high crystalline quality, confirmed by scanning electron microscopy as well as transmission electron microscopy. These nanostructures have promise for spintronic devices and Majorana fermion observation in contact to superconductor materials.

  2. Stability of S and Se induced reconstructions on GaP(001)(21) surface

    SciTech Connect (OSTI)

    Li , D. F.; Guo, Zhi C.; Xiao, Hai Yan; Zu, Xiaotao T.; Gao, Fei

    2010-10-15

    The structural and electronic properties of S- and Se- passivated GaP(001)(21) surfaces were studied using first-principles simulations. Our calculations showed that the most stable structure consists of a single chalcogen atom (S or Se) in the first crystal layer, which is bonded to two Ga atoms of the second layer, and the third P layer replaced by chalcogen atoms, similar to the passivation of GaAs(001)(21) surface by chalcogen atoms. The structural parameters were determined and the surface band characters and the local density of states were also analyzed. The results showed that the preferable structure has no surface states in the bulk band gap, but the energy band gaps of the S- and Se-adsorbed GaP(001) surfaces are 1.83eV and 1.63eV, respectively. The passivation effects for the S- and Se-adsorbed surfaces are similar to each other.

  3. T-558: Oracle Java SE and Java for Business Critical Patch Update Advisory- February 2011

    Broader source: Energy.gov [DOE]

    This Critical Patch Update contains 21 new security fixes for Oracle Java SE and Java for Business. 19 of these vulnerabilities may be remotely exploitable without authentication, i.e., may be exploited over a network without the need for a username and password.

  4. T-641: Oracle Java SE Critical Patch Update Advisory- June 2011

    Office of Energy Efficiency and Renewable Energy (EERE)

    This Critical Patch Update contains 17 new security fixes for Oracle Java SE - 5 apply to client and server deployments of Java SE, 11 apply to client deployments of Java SE only, and 1 applies to server deployments of Java SE only. All of these vulnerabilities may be remotely exploitable without authentication, i.e., may be exploited over a network without the need for a username and password. Oracle CVSS scores assume that a user running a Java applet or Java Web Start application has administrator privileges (typical on Windows). Where the user does not run with administrator privileges (typical on Solaris and Linux), the corresponding CVSS impact scores for Confidentiality, Integrity, and Availability are "Partial" instead of "Complete", and the corresponding CVSS Base score is 7.5 instead of 10 respectively. For issues in Deployment, fixes are only made available for JDK and JRE 6. Users should use the Java Web Start in JRE 6 and the new Java Plug-in introduced in 6 Update 10. CVE-2011-0862, CVE-2011-0873, CVE-2011-0815, CVE-2011-0817, CVE-2011-0863, CVE-2011-0864, CVE-2011-0802, CVE-2011-0814, CVE-2011-0871, CVE-2011-0786, CVE-2011-0788, CVE-2011-0866, CVE-2011-0868, CVE-2011-0872, CVE-2011-0867, CVE-2011-0869, and CVE-2011-0865

  5. Development of CdS/CdTe Tin Film Devices for St. Gobain Coated Glass: Cooperative Research and Development Final Report, CRADA Number CRD-08-317

    SciTech Connect (OSTI)

    Gessert, T.

    2012-04-01

    Research performed at NREL to produce CdS/CdTe devices on St. Gobain coated-glass material to establish a baseline CdS/CdTe device process and determine baseline device performance parameters on St. Gobain material. Performance of these baseline devices compared to similar devices produced by applying the established baseline CdS/CdTe process on alternative St. Gobain coated-glass materials.

  6. Manufacturing Process Optimization to Improve Stability, Yield and Efficiency of CdS/CdTe PV Devices: Final Report, December 2004 - January 2009

    SciTech Connect (OSTI)

    Sampath, W. S.; Enzenroth, A.; Barth, K.

    2009-03-01

    The research by Colorado State University advances the understanding of device stability, efficiency, and process yield for CdTe PV devices.

  7. Manufacturable CuIn(Ga)Se{sub 2}-based solar cells via development of co-sputtered CuInSe{sub 2} absorber layers

    SciTech Connect (OSTI)

    Dr. Ingrid Eisgruber

    1999-03-20

    Yield and reproducibility remain issues in CuIn(Ga)Se{sub 2} (CIGS) photovoltaic module fabrication. While small-area cells (<1 cm{sup 2}) over 18% efficient have been reported, the best large-area manufactured devices (>1 ft{sup 2}) are 11% efficient with about 60% yield. If improvements in large-area manufacturing can accomplish 15% efficiency and 90% yield, the result is a doubling in throughput leading to a reduction in cost per watt of over 50%. The challenge now facing the photovoltaics industry is to bring the efficiencies of small-area cells and large-area industrial modules closer together and to raise manufacturing yields.

  8. Minority carrier lifetime in iodine-doped molecular beam epitaxy-grown HgCdTe

    SciTech Connect (OSTI)

    Madni, I.; Umana-Membreno, G. A.; Lei, W.; Gu, R.; Antoszewski, J.; Faraone, L.

    2015-11-02

    The minority carrier lifetime in molecular beam epitaxy grown layers of iodine-doped Hg{sub 1−x}Cd{sub x}Te (x ∼ 0.3) on CdZnTe substrates has been studied. The samples demonstrated extrinsic donor behavior for carrier concentrations in the range from 2 × 10{sup 16} cm{sup −3} to 6 × 10{sup 17} cm{sup −3} without any post-growth annealing. At a temperature of 77 K, the electron mobility was found to vary from 10{sup 4} cm{sup 2}/V s to 7 × 10{sup 3} cm{sup 2}/V s and minority carrier lifetime from 1.6 μs to 790 ns, respectively, as the carrier concentration was increased from 2 × 10{sup 16} cm{sup −3} to 6 × 10{sup 17} cm{sup −3}. The diffusion of iodine is much lower than that of indium and hence a better alternative in heterostructures such as nBn devices. The influence of carrier concentration and temperature on the minority carrier lifetime was studied in order to characterize the carrier recombination mechanisms. Measured lifetimes were also analyzed and compared with the theoretical models of the various recombination processes occurring in these materials, indicating that Auger-1 recombination was predominant at higher doping levels. An increase in deep-level generation-recombination centers was observed with increasing doping level, which suggests that the increase in deep-level trap density is associated with the incorporation of higher concentrations of iodine into the HgCdTe.

  9. RAPID TeV GAMMA-RAY FLARING OF BL LACERTAE

    SciTech Connect (OSTI)

    Arlen, T.; Aune, T.; Bouvier, A.; Beilicke, M.; Buckley, J. H.; Bugaev, V.; Dickherber, R.; Benbow, W.; Cesarini, A.; Connolly, M. P.; Ciupik, L.; Cui, W.; Feng, Q.; Finley, J. P.; Dumm, J.; Fortson, L.; Errando, M.; Falcone, A.; Federici, S.; Finnegan, G. E-mail: cui@purdue.edu; Collaboration: VERITAS Collaboration; and others

    2013-01-10

    We report on the detection of a very rapid TeV gamma-ray flare from BL Lacertae on 2011 June 28 with the Very Energetic Radiation Imaging Telescope Array System (VERITAS). The flaring activity was observed during a 34.6 minute exposure, when the integral flux above 200 GeV reached (3.4 {+-} 0.6) Multiplication-Sign 10{sup -6} photons m{sup -2} s{sup -1}, roughly 125% of the Crab Nebula flux measured by VERITAS. The light curve indicates that the observations missed the rising phase of the flare but covered a significant portion of the decaying phase. The exponential decay time was determined to be 13 {+-} 4 minutes, making it one of the most rapid gamma-ray flares seen from a TeV blazar. The gamma-ray spectrum of BL Lacertae during the flare was soft, with a photon index of 3.6 {+-} 0.4, which is in agreement with the measurement made previously by MAGIC in a lower flaring state. Contemporaneous radio observations of the source with the Very Long Baseline Array revealed the emergence of a new, superluminal component from the core around the time of the TeV gamma-ray flare, accompanied by changes in the optical polarization angle. Changes in flux also appear to have occurred at optical, UV, and GeV gamma-ray wavelengths at the time of the flare, although they are difficult to quantify precisely due to sparse coverage. A strong flare was seen at radio wavelengths roughly four months later, which might be related to the gamma-ray flaring activities. We discuss the implications of these multiwavelength results.

  10. Fermi level pinning in Fe-doped PbTe under pressure

    SciTech Connect (OSTI)

    Skipetrov, E. P. Kruleveckaya, O. V.; Skipetrova, L. A.; Slynko, E. I.; Slynko, V. E.

    2014-07-14

    We synthesize an iron-doped PbTe single-crystal ingot and investigate the phase and the elemental composition as well as galvanomagnetic properties in weak magnetic fields (4.2?K?T?300?K, B???0.07?T) of Pb{sub 1?y}Fe{sub y}Te alloys upon varying the iron content, at atmospheric pressure and under hydrostatic compression up to 10 kilobars. We find an increase of iron concentration along the length of the ingot and the appearance of microscopic inclusions enriched with iron in the heavily doped samples. Lightly doped alloys are characterized by the p-type metal conductivity. An increase of the iron impurity content leads to a decrease in the free hole concentration, a stabilization of galvanomagnetic parameters, indicating the pinning of the Fermi energy by the iron resonant impurity level lying under the bottom of the valence band, and to the p-n inversion of the conductivity type. Under pressure, the free hole concentration in the sample, in which the stabilization of galvanomagnetic parameters takes place, increases by approximately a factor of four due to the flow of electrons from the valence band to the iron-induced resonant level. Using the two-band Kane and the six-band Dimmock dispersion relations, the pressure dependence of the Fermi energy is calculated. The model of the electronic structure rearrangement of Pb{sub 1?y}Fe{sub y}Te under pressure is proposed. The energy position and the pressure coefficient of the resonant iron impurity level are determined.

  11. High Resolution Dopant Profiles Revealed by Atom Probe Tomography and STEM-EBIC for CdTe Based Solar Cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Poplawsky, Jonathan D.; Li, Chen; Paudel, Naba; Guo, Wei; Yan, Yanfa; Pennycook, Stephen J.

    2016-01-01

    Segregated elements and their diffusion profiles within grain boundaries and interfaces resulting from post deposition heat treatments are revealed using atom probe tomography (APT), scanning transmission electron microscopy (STEM), and electron beam induced current (EBIC) techniques. The results demonstrate how these techniques complement each other to provide conclusive evidence for locations of space charge regions and mechanisms that create them at the nanoscale. Most importantly, a Cl dopant profile that extends ~5 nm into CdTe grains interfacing the CdS is shown using APT and STEM synergy, which has been shown to push the pn-junction into the CdTe layer indicative ofmore » a homojunction (revealed by STEM EBIC). In addition, Cu and Cl concentrations within grain boundaries within several nms and µms from the CdS/CdTe interface are compared, Na segregation of <0.1% is detected, and S variations of ~1–3% are witnessed between CdTe grains close to the CdS/CdTe interface. The segregation and diffusion of these elements directly impacts on the material properties, such as band gap energy and n/p type properties. Optimization of the interfacial and grain boundary doping will lead to higher efficiency solar cells.« less

  12. High thermal stability Sb{sub 3}Te-TiN{sub 2} material for phase change memory application

    SciTech Connect (OSTI)

    Ji, Xinglong; Zhou, Wangyang; Wu, Liangcai Zhu, Min; Rao, Feng; Song, Zhitang; Cao, Liangliang; Feng, Songlin

    2015-01-12

    For phase change memory (PCM) applications, it has been widely accepted that δ phase Sb-Te has fast operation speed and good phase stability. However, the fast growth crystallization mechanism will cause poor amorphous phase stability and overlarge grain size. We introduce TiN{sub 2} into δ phase Sb-Te (Sb{sub 3}Te) to enhance the amorphous thermal stability and refine the grain size. With TiN{sub 2} incorporating, the temperature for 10-year data retention increases from 79 °C to 124 °C. And the grain size decreases to dozens of nanometers scale. Based on X-ray photoelectron spectroscopy and transmission electron microscopy results, we knew that nitrogen atoms bond with titanium, forming disorder region at the grain boundary of Sb{sub 3}Te-TiN{sub 2} (STTN). Thus, STTN has a quite different crystallization mechanism from Sb{sub 3}Te. Furthermore, PCM device based on STTN can realize reversible phase change under 20 ns electrical pulse.

  13. High Resolution Dopant Profiles Revealed by Atom Probe Tomography and STEM-EBIC for CdTe Based Solar Cells

    SciTech Connect (OSTI)

    Poplawsky, Jonathan D.; Li, Chen; Paudel, Naba; Guo, Wei; Yan, Yanfa; Pennycook, Stephen J.

    2016-01-01

    Segregated elements and their diffusion profiles within grain boundaries and interfaces resulting from post deposition heat treatments are revealed using atom probe tomography (APT), scanning transmission electron microscopy (STEM), and electron beam induced current (EBIC) techniques. The results demonstrate how these techniques complement each other to provide conclusive evidence for locations of space charge regions and mechanisms that create them at the nanoscale. Most importantly, a Cl dopant profile that extends ~5 nm into CdTe grains interfacing the CdS is shown using APT and STEM synergy, which has been shown to push the pn-junction into the CdTe layer indicative of a homojunction (revealed by STEM EBIC). In addition, Cu and Cl concentrations within grain boundaries within several nms and µms from the CdS/CdTe interface are compared, Na segregation of <0.1% is detected, and S variations of ~1–3% are witnessed between CdTe grains close to the CdS/CdTe interface. The segregation and diffusion of these elements directly impacts on the material properties, such as band gap energy and n/p type properties. Optimization of the interfacial and grain boundary doping will lead to higher efficiency solar cells.

  14. The Crystallization Behavior of Stochiometric and Off-stochiometric Ga-Sb-Te Materials for Phase-Change Memory

    SciTech Connect (OSTI)

    H Cheng; S Raoux; J Jordan-Sweet

    2011-12-31

    The stoichiometric Ga{sub 4}Sb{sub 6}Te{sub 3} and Ga-Sb materials were systematically studied. The alloy Ga{sub 4}Sb{sub 6}Te{sub 3} shows a fast crystallization speed, very high crystallization temperature, T{sub x}, and high electrical contrast. Although stoichiometric GaSb has similar performance and even faster crystallization speed, the electrical contrast is much lower. The other off-stoichiometric compounds we studied all have higher T{sub x} than Ge{sub 2}Sb{sub 2}Te{sub 5} indicating a good amorphous stability. By raising the Sb/Te ratio with GaSb incorporation, T{sub x} and the recrystallization time of melt-quenched, amorphous samples can be effectively increased. The stoichiometric Ga{sub 4}Sb{sub 6}Te{sub 3} with less likelihood of phase-segregation compared to nonstoichiometric compounds is a promising candidate for phase-change memory.

  15. Fabrication and Spark plasma sintering of nanostructured bismuth telluride (Bi{sub 2}Te{sub 3})

    SciTech Connect (OSTI)

    Saleemi, Mohsin; Toprak, Muhammet S.; Li, Shanghua; Johnsson, Mats; Muhammed, Mamoun

    2012-06-26

    Thermoelectric (TE) devices can harvest residual low-grade waste heat energy. Bismuth telluride (Bi{sub 2}Te{sub 3}) and its alloys are mostly used TE materials in the bulk form for making TE modules. We report a simple, fast and very high yield synthetic process for the bulk Bi{sub 2}Te{sub 3} nanopowders with hexagonal plate like morphology. Spark plasma sintering (SPS) process has been optimized in order to preserve nanostructure while achieving a high compaction density of the pellets. Electron microscopy analysis was used to determine the effect of SPS parameters during compaction on the grain growth. Optimal conditions for the fabricated nanopowder was determined as 673 K, 70 MPa pressure with no holding time, which resulted in average lateral grain size in the range of 165-190 nm for a compact density of 98%. About 50% reduction of thermal conductivity was observed as compared to its bulk counterparts, revealing the feasibility of suggested route in the preservation of nanostructure and enhanced phonon scattering.

  16. Experimental investigation of spin-orbit coupling in n-type PbTe quantum wells

    SciTech Connect (OSTI)

    Peres, M. L.; Monteiro, H. S.; Castro, S. de; Chitta, V. A.; Oliveira, N. F.; Mengui, U. A.; Rappl, P. H. O.; Abramof, E.; Maude, D. K.

    2014-03-07

    The spin-orbit coupling is studied experimentally in two PbTe quantum wells by means of weak antilocalization effect. Using the Hikami-Larkin-Nagaoka model through a computational global optimization procedure, we extracted the spin-orbit and inelastic scattering times and estimated the strength of the zero field spin-splitting energy ?{sub so}. The values of ?{sub so} are linearly dependent on the Fermi wave vector (k{sub F}) confirming theoretical predictions of the existence of large spin-orbit coupling in IV-VI quantum wells originated from pure Rashba effect.

  17. Heavy Higgs bosons and the 2 TeV $W'$ boson

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dobrescu, Bogdan A.; Liu, Zhen

    2015-10-19

    The hints from the LHC for the existence of a W' boson of mass around 1.9 TeV point towards a certain SU(2) L × SU(2) R × U(1) B-L gauge theory with an extended Higgs sector. We show that the decays of the W' boson into heavy Higgs bosons have sizable branching fractions. Interpreting the ATLAS excess events in the search for same-sign lepton pairs plus b jets as arising from W' cascade decays, we then estimate that the masses of the heavy Higgs bosons are in the 400-700 GeV range.

  18. Quantum Anomalous Hall Effect in Hg_1-yMn_yTe Quantum Wells

    SciTech Connect (OSTI)

    Liu, Chao-Xing; Qi, Xiao-Liang; Dai, Xi; Fang, Zhong; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-03-19

    The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum anomalous Hall effect, can be realized in Hg{sub 1-y}Mn{sub y}Te quantum wells, without the external magnetic field and the associated Landau levels. This effect arises purely from the spin polarization of the Mn atoms, and the quantized Hall conductance is predicted for a range of quantum well thickness and the concentration of the Mn atoms. This effect enables dissipationless charge current in spintronics devices.

  19. Charge ordering in stoichiometric FeTe: Scanning tunneling microscopy and spectroscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Wei; Yin, Wei -Guo; Wang, Lili; He, Ke; Ma, Xucun; Xue, Qi -Kun; Chen, Xi

    2016-01-04

    In this study, we use scanning tunneling microscopy and spectroscopy to reveal a unique stripy charge order in a parent phase of iron-based superconductors in stoichiometric FeTe epitaxy films. The charge order has unusually the same—usually half—period as the spin order. We also found highly anisotropic electron band dispersions being large and little along the ferromagnetic (crystallographic b) and antiferromagnetic (a) directions, respectively. Our data suggest that the microscopic mechanism is likely of the Stoner type driven by interatomic Coulomb repulsion Vij, and that Vij and charge fluctuations, so far much neglected, are important to the understanding of iron-based superconductors.

  20. Ab initio study of the structural, electronic and optical properties of ZnTe compound

    SciTech Connect (OSTI)

    Bahloul, B.; Deghfel, B.; Amirouche, L.; Bounab, S.; Bentabet, A.; Bouhadda, Y.; Fenineche, N.

    2015-03-30

    Structural, electronic and optical properties of ZnTe compound were calculated using Density Functional Theory (DFT) based on the pseudopotentials and planewaves (PP-PW) method as implemented in the ABINIT computer code, where the exchange–correlation functional is approximated using the local density approximation (LDA) and the generalized gradient approximation (GGA). The obtained results from either LDA or GGa calculation for lattice parameter, energy band gap and optical parameters, such as the fundamental absorption edge, the peaks observed in the imaginary part of the dielectric function, the macroscopic dielectric constants and the optical dielectric constant, are compared with the available theoretical results and experimental data.