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1

New Rate Schedule CV-UUP1 UNITED STATES DEPARTMENT OF ENERGY  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

UUP1 UUP1 UNITED STATES DEPARTMENT OF ENERGY WESTERN AREA POWER ADMINISTRATION CENTRAL VALLEY PROJECT SCHEDULE OF RATE FOR UNRESERVED USE PENALTIES Effective: October 1, 2011, through September 30, 2016. Available: Within the marketing area served by the Western Area Power Administration (Western), Sierra Nevada Customer Service Region (SNR). Applicable: Western added this penalty rate for unreserved use of transmission service for the Central Valley Project, California-Oregon Transmission Project, and Pacific Alternating Current Intertie effective October 1, 2011. This penalty is applicable to point-to-point (PTP) transmission customers using transmission not reserved or in excess of reservation or network customers when they schedule delivery of off-system non-designated purchases using transmission capacity

2

Photocurrent Mapping of 3D CdSe/CdTe Windowless Solar Cells  

Science Journals Connector (OSTI)

Photocurrent Mapping of 3D CdSe/CdTe Windowless Solar Cells ... back contact; CdSe; CdTe; photovoltaic; 3D solar cells; SPCM ... Scanning photocurrent microscopy (SPCM) has been used to evaluate the local performance of solar cells by scanning a finely focused optical beam across the surface while monitoring device response. ...

Carlos M. Hangarter; Ratan Debnath; Jong Y. Ha; Mehmet A. Sahiner; Christopher J. Reehil; William A. Manners; Daniel Josell

2013-08-22T23:59:59.000Z

3

Thermoelectric properties of polycrystalline In4Se3 and In4Te3  

SciTech Connect (OSTI)

High thermoelectric performance of a single crystal layered compound In{sub 4}Se{sub 3} was reported recently. We present here an electrical and thermal transport property study over a wide temperature range for polycrystalline samples of In{sub 4}Se{sub 3} and In{sub 4}Te{sub 3}. Our data demonstrate that these materials are lightly doped semiconductors, leading to large thermopower and resistivity. Very low thermal conductivity, below 1 W/m K, is observed. The power factors for In{sub 4}Se{sub 3} and In{sub 4}Te{sub 3} are much smaller when compared with state-of-the-art thermoelectric materials. This combined with the very low thermal conductivity results in the maximum ZT value of less than 0.6 at 700 K for In{sub 4}Se{sub 3}.

Shi, Xun [Optimal Inc., Plymouth, Michigan 48170, USA; Cho, Jung Y [GM R& D and Planning, Warren, Michigan; Salvador, James R. [GM R& D and Planning, Warren, Michigan; Yang, Jihui [General Motors Corporation-R& D; Wang, Hsin [Oak Ridge National Laboratory (ORNL)

2010-01-01T23:59:59.000Z

4

Spray Deposition of High Quality CuInSe2 and CdTe Films: Preprint  

SciTech Connect (OSTI)

A number of different ink and deposition approaches have been used for the deposition of CuInSe2 (CIS), Cu(In,Ga)Se2 (CIGS), and CdTe films. For CIS and CIGS, soluble precursors containing Cu, In, and Ga have been developed and used in two ways to produce CIS films. In the first, In-containing precursor films were sprayed on Mo-coated glass substrates and converted by rapid thermal processing (RTP) to In2Se3. Then a Cu-containing film was sprayed down on top of the In2Se3 and the stacked films were again thermally processed to give CIS. In the second approach, the Cu-, In-, and Ga-containing inks were combined in the proper ratio to produce a mixed Cu-In-Ga ink that was sprayed on substrates and thermally processed to give CIGS films directly. For CdTe deposition, ink consisting of CdTe nanoparticles dispersed in methanol was prepared and used to spray precursor films. Annealing these precursor films in the presence of CdCl2 produced large-grained CdTe films. The films were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). Optimized spray and processing conditions are crucial to obtain dense, crystalline films.

Curtis, C. J.; van Hest, M.; Miedaner, A.; Leisch, J.; Hersh, P.; Nekuda, J.; Ginley, D. S.

2008-05-01T23:59:59.000Z

5

DETERMINATION OF BACK CONTACT BARRIER HEIGHT IN Cu(In,Ga)(Se,S)2 AND CdTe SOLAR CELLS  

E-Print Network [OSTI]

DETERMINATION OF BACK CONTACT BARRIER HEIGHT IN Cu(In,Ga)(Se,S)2 AND CdTe SOLAR CELLS Galymzhan T to quantify the energy barrier for holes between a Cu(In,Ga)(Se,S)2 (CIGSeS) or CdTe absorber and the back effectively kill the performance of the cell. Many CIGSeS and CdTe cells, however, do have a back

Sites, James R.

6

Hydrogen passivation of Se and Te in AlSb M. D. McCluskey and E. E. Haller  

E-Print Network [OSTI]

Hydrogen passivation of Se and Te in AlSb M. D. McCluskey and E. E. Haller Lawrence Berkeley observed local vibrational modes LVM's arising from DX-hydrogen complex in AlSb. Hydrogen was diffused into bulk AlSb:Se and AlSb:Te by annealing in sealed quartz ampoules with either hydrogen gas or methanol CH

McCluskey, Matthew

7

Modified magnetism within the coherence volume of superconducting FeSeTe  

SciTech Connect (OSTI)

Neutron Scattering is used to probe magnetic interactions as superconductivity develops in opti- mally doped Fe_(1+ )Se_xTe_(1 x). Applying the first moment sum-rule to comprehensive neutron scatter- ing data, we extract the change in magnetic exchange energy [J_(R-R ) S_R S_R ] in the superconducting state referenced to the normal state. Oscillatory changes are observed for Fe-Fe displacements | R| < , where = 1.3(1) nm is the superconducting coherence length. Dominated by a large reduction in the second nearest neighbor exchange energy (-1.2(2) meV/Fe), the overall reduction in magnetic interaction energy is Hmag = 0.31(9) meV/Fe. Comparison to the superconducting condensation energy E_sc = 0.013(1) meV/Fe, which we extract from specific heat data, suggests the modified magnetism we probe drives superconductivity in Fe_(1+ )Se_xTe_(1 x)

Leiner, Jonathan C [ORNL; Thampy, Vivek [ORNL; Christianson, Andrew D [ORNL; Abernathy, D. [Oak Ridge National Laboratory (ORNL); Stone, Matthew B [ORNL; Lumsden, Mark D [ORNL; Sales, Brian C [ORNL; Safa-Sefat, Athena [ORNL; Hu, Jin [Tulane University; Mao, Zhiqiang [Tulane University; Bao, Wei [Renmin University of China; Broholm, Collin L [ORNL

2014-01-01T23:59:59.000Z

8

Obtaining and investigation of Pb1-xMnxTe(Se, S) semimagnetic semiconductor nanolayers sesitive to infrared rays  

Science Journals Connector (OSTI)

In the given work the energy spectrum and wave functions have been theoretically calculated for quantum-sized films of Pb1-xMnxTe (Se,S) semimagnetic semiconductors. The photo-and electroluminescence properties of Pb1-xMnxTe ... Keywords: detector, electroluminescence, energy spectrum, infrared, nanolayer, photoluminescence, semimagnetic semiconductor, sensitive

M. A. Mehrabova; I. R. Nuriyev; R. M. Mamishova; T. I. Kerimova

2011-11-01T23:59:59.000Z

9

Formation of core/shell-like ZnSe(1?x)Te(x) nanocrystals due to equilibrium surface segregation  

SciTech Connect (OSTI)

We report results of equilibrium surface segregation in ZnSe{sub 1?x}Te{sub x} nanocrystals based on a computational analysis of coupled compositional, structural, and volume relaxation of the nanocrystals that employs Monte Carlo and conjugate-gradient methods according to a first-principles-parameterized description of interatomic interactions. We have determined the equilibrium concentration distribution as a function of nanocrystal size and composition for nanocrystal morphologies that include faceted equilibrium crystal shapes. The results identify the nanoparticle size and composition ranges that allow for self-assembly of core/shell-like nanocrystal structures characterized by a Te-deficient core and a Te-rich shell.

Pandey, Sumeet C.; Mountziaris, T. J.; Venkataraman, Dhandapani; Maroudas, Dimitris

2010-01-01T23:59:59.000Z

10

Three-dimensional topological insulators Bi{sub 2}Te{sub 3}, Bi{sub 2}Se{sub 3}, and Bi{sub 2}Te{sub 2}Se - a microwave spectroscopy study  

SciTech Connect (OSTI)

We present results of investigations of three-dimensional topological insulators from a family of bismuth compounds performed in electron spin resonance spectrometer. Next to the standard spin resonance spectra in Bi{sub 2}Se{sub 3} originating from bulk conduction electrons (g{sub Verbar;} = 27.5 ± 0.1 and g{sub ?} = 19.5 ± 0.1), we observed also cyclotron resonance due to topological surface states in Bi{sub 2}Te{sub 3} and non-resonant signal related to weak anti-localization in Bi{sub 2}Te{sub 2}Se. The analysis of the cyclotron resonance signal yields low Fermi velocity equal to 3250 m/s in Bi{sub 2}Te{sub 3}. The phase coherence length determined from weak anti-localization signal equals to 550 nm at low temperatures in Bi{sub 2}Te{sub 2}Se. Relation of the signals to bulk, topological surface or two-dimensional quantum well states is discussed and where possible indicated.

Wolos, A. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland and Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland); Drabinska, A.; Szyszko, S.; Kaminska, M. [Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland); Strzelecka, S. G.; Hruban, A.; Materna, A.; Piersa, M. [Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919 Warsaw (Poland)

2013-12-04T23:59:59.000Z

11

Studies of sputtered CdTe and CdSe solar cells.  

E-Print Network [OSTI]

??CdTe has recently become the most commercially successful polycrystalline thin filmsolar module material. Its low cost, large-area solar module is reshaping the silicondominatedsolar panel market;… (more)

Kwon, Dohyoung

2012-01-01T23:59:59.000Z

12

A study of Sn addition on bonding arrangement of Se-Te alloys using far infrared transmission spectroscopy  

SciTech Connect (OSTI)

Far infrared transmission spectra of Se{sub 92}Te{sub 8-x}Sn{sub x} (x = 0, 1, 2, 3, 4, 5) glassy alloys are obtained in the spectral range 50-600 cm{sup -1} at room temperature. The results are interpreted in terms of the vibrations of the isolated molecular units in such a way so as to preserve fourfold and twofold coordination for Sn and chalcogen atoms (Se,Te), respectively. With the addition of Sn, Far-IR spectra shift toward high frequency side and some new bands start appearing. Sn atoms appear to substitute for the selenium atoms in the outrigger sites due to large bond formation probability. Theoretical calculations of bond energy, relative probability of bond formation, force constant, and wave number were also made to justify the result.

Kumar, Rajneesh; Rangra, V. S. [Department of Physics, Himachal Pradesh University, Summer-Hill, Shimla, H.P. - 171005 (India); Sharma, Parikshit [Department of Physics, Sri Sai University, Palampur, HP (India); Katyal, S. C. [Department of Physics, Jaypee Institute of Information Technology, Noida, U.P. (India); Sharma, Pankaj [Department of Physics, Jaypee University of Information Technology, Waknghat, Solan, H.P. 173215 (India)

2011-07-01T23:59:59.000Z

13

SPECTROSCOPIC INVESTIGATION OF (NH4)2S TREATED GaSeTe FOR RADIATION DETECTOR APPLICATIONS  

SciTech Connect (OSTI)

The surface of the layered III-VI chalcogenide semiconductor GaSeTe was treated with (NH{sub 4}){sub 2}S at 60 C to modify the surface chemistry and determine the effect on transport properties. Room temperature photoluminescence (PL) measurements were used to assess the effect of the (NH{sub 4}){sub 2}S treatment on surface defect states. Evaluation of the subsequent surface chemistry was performed with high-resolution core-level photoemission measurements. Metal overlayers were deposited on the (NH{sub 4}){sub 2}S treated surfaces and the I-V characteristics were measured. The measurements were correlated to understand the effect of (NH{sub 4}){sub 2}S modification of the interfacial electronic structure with the goal of optimizing the metal/GaSeTe interface for radiation detector devices.

Nelson, A; Laurence, T; Conway, A; Behymer, E; Sturm, B; Voss, L; Nikolic, R; Payne, S; Mertiri, A; Pabst, G; Mandal, K; Burger, A

2009-08-04T23:59:59.000Z

14

Effects of Se substitution on the thermoelectric performance of n-type Co{sub 4}Sb{sub 11.3}Te{sub 0.7?x}Se{sub x} skutterudites  

SciTech Connect (OSTI)

Highlights: ? The simple solid state reaction technique was employed to prepare Co{sub 4}Sb{sub 11.3}Te{sub 0.7?x}Se{sub x} skutterudites. ? The thermal conductivity decreases gradually with the increasing Se content. ? Doping with moderate Se is an effective way to enhance the thermoelectric performance of Co{sub 4}Sb{sub 11.3}Te{sub 0.7?x}Se{sub x}. ? The highest ZT of 1.11 at 800 K is obtained for the Co{sub 4}Sb{sub 11.3}Te{sub 0.58}Se{sub 0.12} sample. -- Abstract: A series of double-substituted Co{sub 4}Sb{sub 11.3}Te{sub 0.7?x}Se{sub x} skutterudites have been fabricated by combining the solid state reaction and the spark plasma sintering method, and the effects of Se substitution on the thermoelectric properties are characterized by measurements of the electrical conductivity, the Seebeck coefficient and the thermal conductivity in the temperature range of 300–800 K. Doping Se into the Co{sub 4}Sb{sub 11.3}Te{sub 0.7?x}Se{sub x} matrix suppresses the carrier concentration, and the electrical conductivity actually decreases with the Se content. However, moderate Se doping is effective in enhancing the thermoelectric performance of the n-type Co{sub 4}Sb{sub 11.3}Te{sub 0.7?x}Se{sub x}, because of the resulted dramatically decreased thermal conductivity. Analyses indicate that the heightened point-defect scattering induced by Se doping together with the electron–phonon scattering induced by Te doping is responsible for the reduction of lattice thermal conductivity of these compounds.

Duan, Bo [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China); Zhai, Pengcheng, E-mail: pczhai@126.com [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China); Liu, Lisheng; Zhang, Qingjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China)

2012-07-15T23:59:59.000Z

15

Cathodoluminescence of Cd4SiS6?, Cd4SiSe6?, and Si-Doped CdS, CdSe, and CdTe Crystals  

Science Journals Connector (OSTI)

CdS, CdSe, and CdTe single crystals were vapor-phase-doped with the corresponding silicon chalcogenides under nearly...4SiS6and Cd4SiSe6crystals were measured. Metastable, sphalerite CdS?Si? and CdSe?Si? films we...

I. N. Odin; M. V. Chukichev; V. A. Ivanov; M. E. Rubina

2001-05-01T23:59:59.000Z

16

Beneficial effect of Se substitution on thermoelectric properties of Co{sub 4}Sb{sub 11.9-x}Te{sub x}Se{sub 0.1} skutterudites  

SciTech Connect (OSTI)

Skutterudite-based compounds, Co{sub 4}Sb{sub 12-x-y}Te{sub x}Se{sub y} (x=0.4, 0.5, 0.6 and y=0.0, 0.1), are synthesized by the solid state reaction and the spark plasma sintering methods, and their structure and the thermoelectric properties have been investigated systematically. It is found that Se doping results in decrease of the lattice parameter and refinement of the particle size compared with those of Se-free samples. The Se-doped samples do not yield a certain increase in the power factor, but show a significant depression in the lattice thermal conductivity. The highest dimensionless figure of merit ZT=1.09 is achieved at 800 K for the Co{sub 4}Sb{sub 11.3}Te{sub 0.6}Se{sub 0.1} compound, which is improved by 15% compared with that of Te alone doped Co{sub 4}Sb{sub 11.4}Te{sub 0.6} compound at the corresponding temperature. - Graphical abstract: The Te and Se co-doped Co{sub 4}Sb{sub 11.9-x}Te{sub x}Se{sub 0.1} skutterudites show amazingly lower thermal conductivity ({kappa}) and lattice thermal conductivity ({kappa}{sub L}) compared with those of Co{sub 4}Sb{sub 12-x}Te{sub x} skutterudites. Highlights: Black-Right-Pointing-Pointer Te and Se co-doped Co{sub 4}Sb{sub 12-x-y}Te{sub x}Se{sub y} compounds have been synthesized by the solid state reaction method. Black-Right-Pointing-Pointer Doping of Se resulted in decrease of the lattice parameter and refinement of the particle size. Black-Right-Pointing-Pointer The co-doped skutterudites show amazingly lower lattice thermal conductivity. Black-Right-Pointing-Pointer Co-doping with Te and Se is an attractive approach to enhance the TE performance of skutterudites.

Duan, Bo [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China); Zhai, Pengcheng, E-mail: pczhai@126.com [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China); Liu, Lisheng; Zhang, Qingjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China); Ruan, Xuefeng [Nanoscience and Technology Center, Wuhan University, No. 138, Bayi Road, Wuhan 430072 (China)] [Nanoscience and Technology Center, Wuhan University, No. 138, Bayi Road, Wuhan 430072 (China)

2012-09-15T23:59:59.000Z

17

X-ray diffraction study of (TlInSe{sub 2}){sub 1-x}(TlGaTe{sub 2}){sub x} crystal system  

SciTech Connect (OSTI)

The crystallographic and dynamic characteristics of TlInSe{sub 2} and TlGaTe{sub 2} crystals have been studied by X-ray diffraction in the temperature range of 85-320 K. The temperature dependences of the unit-cell parameters a of TlInSe{sub 2} and TlGaTe{sub 2} crystals, as well as their coefficients of thermal expansion along the [100] direction, are determined. The concentration dependences of the unit-cell parameters a and c for (TlInSe{sub 2}){sub 1-x}(TlGaTe{sub 2}){sub x} crystals are measured. Anomalies are found in the temperature dependences of the unit-cell parameters a and, correspondingly, the coefficient of thermal expansion, indicating the existence of phase transitions in TlInSe{sub 2} and TlGaTe{sub 2} crystals.

Sheleg, A. U., E-mail: sheleg@ifttp.bas-net.by; Zub, E. M.; Yachkovskii, A. Ya. [National Academy of Sciences of Belarus, State Scientific and Production Association, Scientific and Practical Materials Research Center (Belarus); Mustafaeva, S. N.; Kerimova, E. M. [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan)

2012-03-15T23:59:59.000Z

18

Thermal Sintering Improves the Short Circuit Current of Solar Cells Sensitized with CdTe/CdSe Core/Shell Nanocrystals  

Science Journals Connector (OSTI)

Aqueous colloidal solution of CdTe/CdSe core/shell nanocrystals used in this sensitized solar cells were synthesized using a wet chemical method. These colloidal nanocrystals were capped with Mercapto-Succinic...

Padmashri Patil

2014-01-01T23:59:59.000Z

19

Structural properties and spatial ordering in multilayered ZnMgTe/ZnSe type-II quantum dot structures  

SciTech Connect (OSTI)

We report the structural properties and spatial ordering of multilayer ZnMgTe quantum dots (QDs) embedded in ZnSe, where sub-monolayer quantities of Mg were introduced periodically during growth in order to reduce the valence band offset of ZnTe QDs. The periodicity, period dispersion, individual layer thickness, and the composition of the multilayer structures were determined by comparing the experimental high resolution x-ray diffraction (HRXRD) spectra to simulated ones for the allowed (004) and quasi-forbidden (002) reflections in combination with transmission electron microscopy (TEM) results. Secondary ion mass spectroscopy (SIMS) profiles confirmed the incorporation of Mg inside the QD layers, and the HRXRD analysis revealed that there is approximately 32% Mg in the ZnMgTe QDs. The presence of Mg contributes to higher scattering intensity of the HRXRD, leading to the observation of higher order superlattice peaks in both the (004) and (002) reflections. The distribution of scattered intensity in the reciprocal space map (RSM) shows that the diffuse scattered intensity is elongated along the q{sub x} axis, indicating a vertical correlation of the dots, which is found to be less defined for the sample with larger periodicity. The diffuse scattered intensity is also found to be weakly correlated along the q{sub z} direction indicating a weak lateral correlation of the dots.

Manna, U.; Noyan, I. C.; Neumark, G. F. [Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 (United States); Zhang, Q.; Moug, R. [Department of Chemistry, City College of CUNY, New York, New York 10031 (United States); Salakhutdinov, I. F. [Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 (United States); Department of Physics, Queens College of CUNY, Flushing, New York 11367 (United States); Dunn, K. A.; Novak, S. W. [College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203 (United States); Tamargo, M. C. [Department of Chemistry, City College of CUNY, New York, New York 10031 (United States); Graduate Center of CUNY, New York, New York 10016 (United States); Kuskovsky, I. L. [Department of Physics, Queens College of CUNY, Flushing, New York 11367 (United States); Graduate Center of CUNY, New York, New York 10016 (United States)

2012-02-01T23:59:59.000Z

20

NONLINEAR OPTICAL EFFECTS IN ROTATIONALLY-TWINNED CRYSTALS: AN EVALUATION OF CdTe, ZnTe AND ZnSe  

E-Print Network [OSTI]

405 NONLINEAR OPTICAL EFFECTS IN ROTATIONALLY-TWINNED CRYSTALS: AN EVALUATION OF CdTe, ZnTe AND Zn une loi en N2. On discutera les avantages potentiels en optique non linéaire des cristaux de CdTe, Zn-spaced twin planes the enhancement is proportional to N2. A comparison is made between CdTe, ZnTe, and Zn

Boyer, Edmond

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Structural and dynamical properties of Bridgman-grown CdSe[subscript x]Te[subscript 1?x] (0  

E-Print Network [OSTI]

Measurements of the Raman scattering and extended x-ray-absorption fine-structure (EXAFS) spectroscopy are reported on a series of Bridgman-grown zinc-blende CdTe[subscript 1?x]Se[subscript x] (0.35 ? x > 0.05) ternary ...

Talwar, Devki N.

22

CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} and CdTe PV solar cells  

SciTech Connect (OSTI)

Higher indium proportion in the first precursor was employed to eliminate pits in CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} films prepared by two Se-vapor selenizations of metallic precursors. CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} films had large, faceted grains, and a near-optimum composition Cu:In:Ga:Se 24.25:22.21:4.40:49.14. Ga incorporated using a Cu-Ga(22 at. {percent}) alloy target was enhanced by optimizing the time-temperature profiles of selenizations. CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} solar cells gave {ital V}{sub oc} of 451.8 mV, {ital J}{sub sc} of 34.5 mA, FF of 57.87{percent}, total area efficiency of 9.02{percent}. CdTe thin films were prepared by heat treatment of magnetron-sputtered elemental Cd/Te stacks. Formation of extraneous oxide phases was avoided by optimizing ambients, temperature, and CdCl{sub 2} treatment. CdTe solar cells gave maximum {ital V}{sub oc} of {approximately}600 mV, {ital J}{sub sc} of {approximately}5 mA.cm{sup {minus}2}, very low FF and efficiency probably due to blocking layer or junction away from CdS{backslash}CdTe interface. {copyright} {ital 1996 American Institute of Physics.}

Dhere, N.G. [Florida Solar Energy Center, 300 State Rd 401, Cape Canaveral, Florida 32920-4099 (United States)

1996-01-01T23:59:59.000Z

23

Solar-energy conversion by combined photovoltaic converters with CdTe and CuInSe{sub 2} base layers  

SciTech Connect (OSTI)

The possibility of the combined use of bifacial thin-film solar cells based on CdTe and frontal solar cells with a CuInSe{sub 2} base layer in tandem structures is experimentally confirmed. It is found that, for the use of bifacial solar cells based on cadmium telluride in a tandem structure, the optimal thickness of their base layer should be 1 ?m. The gain in the efficiency of the tandem structure, compared with an individual CuInSe{sub 2}-based solar cell, is 1.8% in the case of series-connected solar cells and 1.3%, for parallel-connected.

Khrypunov, G. S., E-mail: khrip@ukr.net; Sokol, E. I. [National Technical University “Kharkiv Polytechnic Institute” (Ukraine); Yakimenko, Yu. I. [National Technical University “Kyiv Polytechnic Institute”, Research Institute of Applied Electronics (Ukraine); Meriuts, A. V. [National Technical University “Kharkiv Polytechnic Institute” (Ukraine); Ivashuk, A. V. [National Technical University “Kyiv Polytechnic Institute”, Research Institute of Applied Electronics (Ukraine); Shelest, T. N. [National Technical University “Kharkiv Polytechnic Institute” (Ukraine)

2014-12-15T23:59:59.000Z

24

Comparison of crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te nanocrystalline thin films: Effects of homogeneous irradiation with an electron beam  

SciTech Connect (OSTI)

The effects of homogenous electron beam (EB) irradiation on the crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te thin films were investigated. Both types of thin films were prepared by flash evaporation, after which homogeneous EB irradiation was performed at an acceleration voltage of 0.17?MeV. For the n-type thin films, nanodots with a diameter of less than 10?nm were observed on the surface of rice-like nanostructures, and crystallization and crystal orientation were improved by EB irradiation. The resulting enhancement of mobility led to increased electrical conductivity and thermoelectric power factor for the n-type thin films. In contrast, the crystallization and crystal orientation of the p-type thin films were not influenced by EB irradiation. The carrier concentration increased and mobility decreased with increased EB irradiation dose, possibly because of the generation of defects. As a result, the thermoelectric power factor of p-type thin films was not improved by EB irradiation. The different crystallization behavior of the n-type and p-type thin films is attributed to atomic rearrangement during EB irradiation. Selenium in the n-type thin films is more likely to undergo atomic rearrangement than the other atoms present, so only the crystallinity of the n-type Bi-Se-Te thin films was enhanced.

Takashiri, Masayuki, E-mail: takashiri@tokai-u.jp; Imai, Kazuo; Uyama, Masato; Nishi, Yoshitake [Department of Materials Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Hagino, Harutoshi; Miyazaki, Koji [Department of Mechanical and Control Engineering, Kyushu Institute of Technology, 1-1 Sensui, Tobata-ku, Kitakyushu 804-8550 (Japan); Tanaka, Saburo [Department of Mechanical Engineering, College of Engineering, Nihon University, Nakagawara, Tokusada, Tamuramachi, Koriyama, Fukushima 963-8642 (Japan)

2014-06-07T23:59:59.000Z

25

Submicrosized Rods, Cables, and Tubes of ZnE (E = S, Se, Te): Exterior?Interior Boron-Chalcogen Conversions and Optical Properties  

Science Journals Connector (OSTI)

Submicrosized Rods, Cables, and Tubes of ZnE (E = S, Se, Te): Exterior?Interior Boron-Chalcogen Conversions and Optical Properties ... The absence of ZnO judging from the XRD (part d of Figure 3) and the disappearance of the core as shown in the SEM images (parts c and d of Figure 5) allow us to conclude that the intermediate product is heterostructure with ZnO as core and ZnS as sheath, that is, the ZnO/ZnS cable. ...

Yi-Zhi Huang; Ling Chen; Li-Ming Wu

2008-10-15T23:59:59.000Z

26

Temperature dependence of the resonance and low-energy spin excitations in superconducting FeTe0.6Se0.4  

SciTech Connect (OSTI)

We use inelastic neutron scattering to study the temperature dependence of the low-energy spin excitations in single crystals of superconducting FeTe{sub 0.6}Se{sub 0.4} (T{sub c} = 14 K). In the low-temperature superconducting state, the imaginary part of the dynamic susceptibility at the electron and hole Fermi-surfaces nesting wave vector Q = (0.5, 0.5), {chi}{sup ''} (Q, {omega}), has a small spin gap, a two-dimensional neutron spin resonance above the spin gap, and increases linearly with increasing {h_bar}{omega} for energies above the resonance. While the intensity of the resonance decreases like an order parameter with increasing temperature and disappears at temperature slightly above T{sub c}, the energy of the mode is weakly temperature dependent and vanishes concurrently above T{sub c}. This suggests that in spite of its similarities with the resonance in electron-doped superconducting BaFe{sub 2-x} (Co, Ni){sub x}As{sub 2}, the mode in FeTe{sub 0.6}Se{sub 0.4} is not directly associated with the superconducting electronic gap.

Lipscombe, O. J. [University of Tennessee, Knoxville (UTK); Luo, H.Q. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics; Lumsden, Mark D [ORNL; Dai, Pengcheng [University of Tennessee, Knoxville (UTK)

2012-01-01T23:59:59.000Z

27

Electrical and thermoelectric properties of 90% Bi{sub 2}Te{sub 3}-5% Sb{sub 2}Te{sub 3}-5% Sb{sub 2}Se{sub 3} single crystals doped with SbI{sub 3}  

SciTech Connect (OSTI)

Bi{sub 2}Te{sub 3}-Sb{sub 2}Te{sub 3}-Sb{sub 2}Se{sub 3} alloys with Sb{sub 2}Te{sub 3} and Sb{sub 2}Se{sub 3} contents up to 10 mol%, e.g., the 90% Bi{sub 2}Te{sub 3}-5% Sb{sub 2}Te{sub 3}-5% Sb{sub 2}Se{sub 3} alloy, are among the best n-type thermoelectric materials for Peltier coolers used near room temperature. In this work, the electrical and thermoelectric properties of Sbl{sub 3}doped 90% Bi{sub 2}Te{sub 3}-5% Sb{sub 2}Te{sub 3}-5% Sb{sub 2}Se{sub 3} alloys were characterized at temperatures ranging from 80K to 600K. The temperature dependencies of the Hall coefficient, carrier mobility, Seebeck coefficient and thermal conductivity were measured, and the scattering parameter and bandgap energy were determined.

Hyun, D.B.; Hwang, J.S.; Shim, J.D.; Kolomoets, N.V. [Korea Inst. of Science and Technology, Seoul (Korea, Republic of). Div. of Metals] [Korea Inst. of Science and Technology, Seoul (Korea, Republic of). Div. of Metals; Oh, T.S. [Hong Ik Univ., Seoul (Korea, Republic of). Dept. of Metallurgy and Materials Science] [Hong Ik Univ., Seoul (Korea, Republic of). Dept. of Metallurgy and Materials Science

1998-12-04T23:59:59.000Z

28

Quasiparticle self-consistent GW calculations for PbS, PbSe, and PbTe: Band structure and pressure coefficients  

E-Print Network [OSTI]

and in solar-energy panels.8 With Tl doping PbTe may even exhibit superconductivity.9,10 The lead chalcogenides Laboratory, Los Alamos, New Mexico 87545, USA 4School of Materials, Arizona State University, Tempe, Arizona

Svane, Axel Torstein

29

Interface Driven Energy Filtering of Thermoelectric Power in Spark Plasma Sintered Bi2Te2.7Se0.3 Nanoplatelet Composites  

E-Print Network [OSTI]

and electrical and thermal conductivities is essential for the high performance of thermoelectric materials. Bulk, the electronic and lattice contributions to the thermal conductivity.5 Thus a good TE material should have a high Seebeck coefficient, a high electrical conductivity, and a low thermal conductivity. Combining

Xiong, Qihua

30

Lattice location and local magnetism of recoil implanted Fe impurities in wide and narrow band semiconductors CdTe, CdSe, and InSb: Experiment and theory  

SciTech Connect (OSTI)

Employing the time differential perturbed angular distribution method, we have measured local susceptibility and spin relaxation rate of {sup 54}Fe nuclei implanted in III-V and II-VI semiconductors, CdTe, CdSe, and InSb. The magnetic response of Fe, identified to occupy the metal as well as the semi-metal atom sites, exhibit Curie-Weiss type susceptibility and Korringa like spin relaxation rate, revealing the existence of localized moments with small spin fluctuation temperature. The experimental results are supported by first principle electronic structure calculations performed within the frame work of density functional theory.

Mohanta, S. K.; Mishra, S. N. [Tata Institute of Fundamental Research (TIFR), Homi Bhabha Road, Mumbai 400005 (India)

2014-05-07T23:59:59.000Z

31

Effect of fluctuations on electron and phonon processes and thermodynamic parameters of Ag{sub 2}Te and Ag{sub 2}Se in the region of phase transition  

SciTech Connect (OSTI)

Temperature dependences of electrical conductivity {sigma}, thermoelectric power {alpha}, results of differential thermal analysis {delta}T{sub y}, thermal conductivity {chi}, temperature conductivity {kappa}, and heat capacity C{sub p} were studied in Ag{sub 2}Te and Ag{sub 2}Se semiconductors in the region of the phase transition. Two extrema are observed in the temperature dependence {chi}(T): a maximum in the region of the {alpha}' {sup {yields}} {beta}' transition and a minimum in the region of the {beta}' {sup {yields}} {beta} transition; these extrema are caused by the similar dependence C{sub p}(T). It is shown that the {alpha} {sup {yields}} {alpha}' and {beta}' {sup {yields}} {beta} transitions are displacement transitions, while the {alpha}' {sup {yields}} {beta}' transition is of reconstruction type. It is established that the disorder parameter {eta} in silver chalcogenides is highly smeared in the region of the phase transition; therefore, disordering of phases at the point of the phase transition is incomplete: 73, 62, and 48% in Ag{sub 2}Te, Ag{sub 2}Se, and Ag{sub 2}S, respectively. The minimum volumes V{sub ph} for new phases are calculated; it is shown that the value of V{sub ph} in displacement transitions is larger than in the reconstruction-type transitions.

Aliev, S. A.; Aliev, F. F. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)], E-mail: farzali@physics.ab.az

2008-04-15T23:59:59.000Z

32

S Se  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Se Se er rp pe en nt ti in ne e S St ty yl le e C Co oi il l W Wi in nd di in ng gs s f fo or r B BE EP PC C- -I II I I IR R M Ma ag gn ne et t P Pr ro od du uc ct ti io on n V Viid de eo oc co on nffe er re en nc ce e B Be ettw we ee en n IIH HE EP P a an nd d B BN NL L S Sc ch he ed du ulle ed d ffo or r M Ma ar rc ch h 3 3,, 2 20 00 04 4 o on n B BE EP PC C- -IIII S SC C M Ma ag gn ne ett P Pr ro od du uc cttiio on n.. Presented by Brett Parker/BNL - SMD First SCQ Production Coil Winding 7 0 0 Z (mm) 300 200 100 θ (deg.) 5 0 0 Z (mm) θ (deg.) O Or ri ig gi in na al l D Do ou ub bl le e- -L La ay ye er r B BE EP PC C- -I II I C Co oi il l W Wi in nd di in ng g P Pa at tt te er rn ns s f fo or r S SC CB B a an nd d S SC CQ Q. . The plan had been to wind one coil pole and then stop winding to fill in gaps with G10 before adding new substrate and then continue winding the same pole in the second layer. This was maybe not so bad for SCB where we would have had to stop/start twice but for the four double-layer SCQ we would have had sixteen stop/starts

33

Studies on the Bi[subscript 2]Te[subscript 3]–Bi[subscript 2]Se[subscript 3]–Bi[subscript 2]S[subscript 3] system for mid-temperature thermoelectric energy conversion  

E-Print Network [OSTI]

Bismuth telluride (Bi[subscript 2]Te[subscript 3]) and its alloys have been widely investigated as thermoelectric materials for cooling applications at around room temperature. We report a systematic study on many compounds ...

Liu, Weishu

34

Mechanical and Electrical Properties of CdTe Tetrapods Studied by Atomic Force Microscopy  

E-Print Network [OSTI]

Electrical Properties of CdTe Tetrapods Studied by Atomicelectrical properties of CdTe tetrapod-shaped nanocrystalsIntroduction CdSe and CdTe nanocrystals possess interesting

2008-01-01T23:59:59.000Z

35

Effects of partial anion substitution on the thermoelectric properties of silver(I) chalcogenide halides in the system Ag{sub 5}Q{sub 2}X with Q=Te, Se and S and X=Br and Cl  

SciTech Connect (OSTI)

A selection of mixed conducting silver chalcogenide halides of the general formula Ag{sub 5}Q{sub 2}X with Q=sulfur, selenium and tellurium and X=chlorine and bromine has been investigated due to their thermoelectric properties. Recently, the ternary counterpart Ag{sub 5}Te{sub 2}Cl showed a defined d{sup 10}-d{sup 10} interaction in the disordered cation substructure at elevated temperatures where Ag{sub 5}Te{sub 2}Cl is present in its high temperature {alpha}-phase. A significant drop of the thermal diffusivity has been observed during the {beta}-{alpha} phase transition reducing the values from 0.12 close to 0.08 mm{sup 2} s{sup -1}. At the same transition the thermopower reacts on the increasing silver mobility and jumps towards less negative values. Thermal conductivities, thermopower and thermal diffusivity of selected compounds with various grades of anion substitution in Ag{sub 5}Q{sub 2}X were determined around the silver-order/disorder {beta}-{alpha} phase transition. A formation of attractive interactions could be observed for selenium substituted phases while no effect was detected for bromide and sulfide samples. Depending on the grade and type of substitution the thermopower changes significantly at and after the {beta}-{alpha} phase transition. Thermal conductivities are low reaching values around 0.2-0.3 W m{sup -1} K{sup -1} at 299 K. Partial anion exchange can substantially tune the thermoelectric properties in Ag{sub 5}Q{sub 2}X phases. -- Graphical abstract: A structure section of the {alpha}-Ag{sub 5}Te{sub 2}Cl structure type and the thermopower evolution of Ag{sub 5}Te{sub 2}Cl{sub 0.4}Br{sub 0.6} undergoing a silver ion order/disorder phase transition. Display Omitted Research highlights: > We report on thermoelectric properties of silver(I) chalcogenide halides. > We examine thermopower, thermal diffusivity and thermal behavior. > Silver mobility, phase transitions and order/disorder phenomena are discussed. > Partial anion exchange can tune thermoelectric properties significantly.

Eckstein, Nadine [TU Muenchen, Lichtenbergstrasse 4, Garching (Germany); Nilges, Tom, E-mail: tom.nilges@lrz.tum.d [TU Muenchen, Lichtenbergstrasse 4, Garching (Germany); Decourt, Rodolphe; Bobet, Jean-Louis; Chevalier, Bernard [CNRS, Universite de Bordeaux, ICMCB, Avenue du Docteur Schweitzer 87, 33608 PESSAC cedex (France)

2011-04-15T23:59:59.000Z

36

Spectroscopic ellipsometric modeling of a Bi–Te–Se write layer of an optical data storage device as guided by atomic force microscopy, scanning electron microscopy, and X-ray diffraction  

Science Journals Connector (OSTI)

Abstract Conventional magnetic tape is the most widely used medium for archival data storage. However, data stored on it need to be migrated every ca. 5 years. Recently, optical discs that store information for hundreds, or even more than 1000 years, have been introduced to the market. We recently proposed that technology in these optical discs be used to make an optical tape that would show greater permanence than its magnetic counterpart. Here we provide a detailed optical characterization of a sputtered thin film of bismuth, tellurium, and selenium (BTS) that is a proposed data storage layer for these devices. The methodology described herein should be useful in the future development of related materials. Spectroscopic ellipsometry (SE) data are obtained using interference enhancement, and the modeling of this data is guided by results from atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray reflectivity (XRR). By AFM, ca. 40 nm BTS films show ca. 10 nm roughness. SEM images also suggest considerable roughness in the films and indicate that they are composed of 13.1 ± 5.9 nm grains. XRD confirms that the films are crystalline and predicts a grain size of 17 ± 2 nm. XRD results are consistent with the composition of the films — a mildly oxidized BTS material. Three models of increasing complexity are investigated to explain the SE data. The first model consists of a smooth, homogeneous BTS film. The second model adds a roughness layer to the previous model. The third model also has two layers. The bottom layer is modeled as a mixture of BTS and void using a Bruggeman effective medium approximation. The upper layer is similarly modeled, but with a gradient. The first model was unable to adequately model the SE data. The second model was an improvement — lower MSE (4.4) and good agreement with step height measurements. The third model was even better — very low MSE (2.6) and good agreement with AFM results. The third SE model predicted ca. 90% void at the film surface. XRR modeling of the film agreed well with the predictions from SE. The uniquenesses of the SE models were confirmed.

Hao Wang; Nitesh Madaan; Jacob Bagley; Anubhav Diwan; Yiqun Liu; Robert C. Davis; Barry M. Lunt; Stacey J. Smith; Matthew R. Linford

2014-01-01T23:59:59.000Z

37

Possibilities of increasing the efficiency of Si and CuInSe2 solar cells  

Science Journals Connector (OSTI)

The paper proposes a method of increasing the efficiency of Si and CuInSe2 solar cells using the impact ionization and impurity...pZnTe-pSi-nSi and pZnTe-pCuInSe2-n(CuInSe2)1?x (2InAs) ...

M. S. Saidov

2011-09-01T23:59:59.000Z

38

Midea: Order (2010-SE-0110, 2012-SE-1402, 2012-SE-1404, 2013-SE-1401) |  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Midea: Order (2010-SE-0110, 2012-SE-1402, 2012-SE-1404, Midea: Order (2010-SE-0110, 2012-SE-1402, 2012-SE-1404, 2013-SE-1401) Midea: Order (2010-SE-0110, 2012-SE-1402, 2012-SE-1404, 2013-SE-1401) November 26, 2012 DOE ordered Midea America Corp., Hefei Hualing Co., Ltd., and China Refrigeration Industry Co., Ltd., to pay a $4,579,949 ($4,562,838 plus one percent interest) civil penalty after finding Midea had manufactured and distributed in commerce in the U.S. a large quantity of basic models HD-l46F, HS-390C, UL-WD145-D, and UL-WD195-D of noncompliant refrigerator-freezers and freezers. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Midea. Midea: Order (2010-SE-0110, 2012-SE-1402, 2012-SE-1404, 2013-SE-1401) More Documents & Publications Midea: Proposed Penalty (2010-SE-0110, 2012-SE-1402, 2012-SE-1404)

39

125Te NMR chemical-shift trends in PbTe–GeTe and PbTe–SnTe alloys  

SciTech Connect (OSTI)

Complex tellurides, such as doped PbTe, GeTe, and their alloys, are among the best thermoelectric materials. Knowledge of the change in 125Te NMR chemical shift due to bonding to dopant or “solute” atoms is useful for determination of phase composition, peak assignment, and analysis of local bonding. We have measured the 125Te NMR chemical shifts in PbTe-based alloys, Pb1?xGexTe and Pb1?xSnxTe, which have a rocksalt-like structure, and analyzed their trends. For low x, several peaks are resolved in the 22-kHz MAS 125Te NMR spectra. A simple linear trend in chemical shifts with the number of Pb neighbors is observed. No evidence of a proposed ferroelectric displacement of Ge atoms in a cubic PbTe matrix is detected at low Ge concentrations. The observed chemical shift trends are compared with the results of DFT calculations, which confirm the linear dependence on the composition of the first-neighbor shell. The data enable determination of the composition of various phases in multiphase telluride materials. They also provide estimates of the 125Te chemical shifts of GeTe and SnTe (+970 and +400±150 ppm, respectively, from PbTe), which are otherwise difficult to access due to Knight shifts of many hundreds of ppm in neat GeTe and SnTe.

Njegic, Bosiljka [Ames Laboratory; Levin, Evgenii M. [Ames Laboratory; Schmidt-Rohr, Klaus [Ames Laboratory

2013-10-08T23:59:59.000Z

40

p-type Bi2Se3 for topological insulator and low temperature thermoelectric applications  

E-Print Network [OSTI]

end-members of the (Bi,Sb)2(Te,Se)3 family of thermoelectric materials. Decades of work-based thermoelectrics has been the difficulty in making the material p-type. Unlike Bi2Te3, which can1 p-type Bi2Se3 for topological insulator and low temperature thermoelectric applications Y.S. Hor1

Ong, N. P.

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Metallurgy, thermal stability, and failure mode of the commercial Bi-Te-based thermoelectric modules.  

SciTech Connect (OSTI)

Bi-Te-based thermoelectric (TE) alloys are excellent candidates for power generation modules. We are interested in reliable TE modules for long-term use at or below 200 C. It is known that the metallurgical characteristics of TE materials and of interconnect components affect the performance of TE modules. Thus, we have conducted an extensive scientific investigation of several commercial TE modules to determine whether they meet our technical requirements. Our main focus is on the metallurgy and thermal stability of (Bi,Sb){sup 2}(Te,Se){sup 3} TE compounds and of other materials used in TE modules in the temperature range between 25 C and 200 C. Our study confirms the material suite used in the construction of TE modules. The module consists of three major components: AlN cover plates; electrical interconnects; and the TE legs, P-doped (Bi{sub 8}Sb{sub 32})(Te{sub 60}) and N-doped (Bi{sub 37}Sb{sub 3})(Te{sub 56}Se{sub 4}). The interconnect assembly contains Sn (Sb {approx} 1wt%) solder, sandwiched between Cu conductor with Ni diffusion barriers on the outside. Potential failure modes of the TE modules in this temperature range were discovered and analyzed. The results show that the metallurgical characteristics of the alloys used in the P and N legs are stable up to 200 C. However, whole TE modules are thermally unstable at temperatures above 160 C, lower than the nominal melting point of the solder suggested by the manufacture. Two failure modes were observed when they were heated above 160 C: solder melting and flowing out of the interconnect assembly; and solder reacting with the TE leg, causing dimensional swelling of the TE legs. The reaction of the solder with the TE leg occurs as the lack of a nickel diffusion barrier on the side of the TE leg where the displaced solder and/or the preexisting solder beads is directly contact the TE material. This study concludes that the present TE modules are not suitable for long-term use at temperatures above 160 C due to the reactivity between the Sn-solder and the (Bi,Sb){sup 2}(Te,Se){sup 3} TE alloys. In order to deploy a reliable TE power generator for use at or below 200 C, alternate interconnect materials must be used and/or a modified module fabrication technique must be developed.

Yang, Nancy Y. C.; Morales, Alfredo Martin

2009-02-01T23:59:59.000Z

42

Ann bay lodyans 15 / Se Bryant Freeman ("Tonton Liben") ki pare ti liv sa a  

E-Print Network [OSTI]

neg nan yon restoran: Fi a: Ala bel ou bel, monche! Se soley! Neg la: Se donmaj mwen pa k» H i o n v n n h*i fi tou. SMMSJJMJg $2.00 0-8400-5122-0 Fi a: Fe tankou mwen, moi |||||| 9 TOOsUM 1226'! 'I FREEMAN, BRYANT 16 ANN BAY LODYANS VOL.15... pitit, e tout se te tifi. Epi vin yon tifi anko, yo rele I Asefi. Papa yo mouri, e manman an setoblije voye Asefi al rete kay yon madanm lavil, ki rele madan Souza. Madan Souza te renmen Asefi anpil. Asefi, bo kote pa I, te kontan net. Nonselman li...

Freeman, Bryant C., ed.

2000-01-01T23:59:59.000Z

43

Native defects in tetradymite Bi2(TexSe3-x) topological insulators  

SciTech Connect (OSTI)

Formation energies of native defects in Bi2(TexSe3-x), with comparison to ideal Bi2Te2S, are calculated in density-functional theory to assess transport properties. Bi2Se3 is found to be n type for both Bi- and Se-rich growth conditions, while Bi2Te3 changes from n to p type going from Te- to Bi-rich conditions, as observed. Bi2Te2Se and Bi2Te2S are generally n type, explaining observed heavily doped n-type behavior in most samples. A (0/-) transition level at 16 meV above valence-band maximum for Bi on Te antisites in Bi2Te2Se is related to the observed thermally active transport gap causing a p-to-n transition at low temperature. Bi2(TexSe3-x) with x>2 are predicted to have high bulk resistivity due to effective carrier compensation when approaching the n-to-p crossover. Predicted behaviors are confirmed from characterization of our grown single crystals.

Wang, Lin-Lin [Ames Laboratory; Huang, Mianliang [South Dakota School of Mines; Thimmaiah, Srinivasa [Ames Laboratory; Alam, Aftab [Ames Laboratory; Budko, Sergey L. [Ames Laboratory; Kaminski, Adam [Ames Laboratory; Lograsso, Thomas A. [Ames Laboratory; Canfield, Paul [Ames Laboratory; Johnson, Duane D. [Ames Laboratory

2013-03-08T23:59:59.000Z

44

Quantifying electron-phonon coupling in CdTe12xSex nanocrystals via coherent phonon manipulation  

E-Print Network [OSTI]

Quantifying electron-phonon coupling in CdTe12xSex nanocrystals via coherent phonon manipulation B to manipulate coherent phonon excitation and quantify the strength of electron-phonon coupling in CdTe1Ã?xSex nanocrystals (NCs). Raman active CdSe and CdTe longitudinal optical phonon (LO) modes are excited and probed

Xu, Xianfan

45

Magnetoluminescence of CdTe/MnTe/CdMgTe heterostructures with ultrathin MnTe layers  

SciTech Connect (OSTI)

CdTe/MnTe/CdMgTe quantum-well structures with one or two monolayers of MnTe inserted at CdTe/CdMgTe interfaces were fabricated. The spectra of the excitonic luminescence from CdTe quantum wells and their variation with temperature indicate that introduction of ultrathin MnTe layers improves the interface quality. The effect of a magnetic field in the Faraday configuration on the spectral position of the exciton-emission peaks indicates that frustration of magnetic moments in one-monolayer MnTe insertions is weaker than in two-monolayer insertions. The effect of a magnetic field on the exciton localization can be explained in terms of the exciton wave-function shrinkage and obstruction of the photoexcited charge-carrier motion in the quantum well.

Agekyan, V. F., E-mail: vfag@rambler.ru [St. Petersburg State University, Fock Institute of Physics (Russian Federation); Holz, P. O. [Polish Academy of Sciences, Institute of Physics (Poland); Karczewski, G. [Linkoeping University (Sweden); Katz, V. N. [St. Petersburg State University, Fock Institute of Physics (Russian Federation); Moskalenko, E. S. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Serov, A. Yu.; Filosofov, N. G. [St. Petersburg State University, Fock Institute of Physics (Russian Federation)

2011-10-15T23:59:59.000Z

46

De de se  

E-Print Network [OSTI]

In this dissertation, I argue against a unitary treatment of individual de se ascription. Based on consideration of Yoruba logophors and English dream-report pronouns, I show that one mechanism is best analyzed as binding ...

Anand, Pranav

2006-01-01T23:59:59.000Z

47

CdTe/CdZnTe pixellated radiation detector.  

E-Print Network [OSTI]

??The work in this thesis is focused on the study of CdTe/CdZnTe pixellated detectors. During this research, three main aspects have been covered in the… (more)

Mohd Zain, Rasif

2015-01-01T23:59:59.000Z

48

Weak topological insulators in PbTe/SnTe superlattices  

E-Print Network [OSTI]

It is desirable to realize topological phases in artificial structures by engineering electronic band structures. In this paper we investigate (PbTe)[subscript m](SnTe)[subscript 2n?m] superlattices along the [001] direction ...

Yang, Gang

49

Te INCLUSIONS IN CdTe GROWN FROM A SLOWLY COOLED Te SOLUTION AND BY THE TRAVELLING SOLVENT METHOD  

E-Print Network [OSTI]

135 Te INCLUSIONS IN CdTe GROWN FROM A SLOWLY COOLED Te SOLUTION AND BY THE TRAVELLING SOLVENT. Abstract. 2014 CdTe crystals have been grown from a slowly cooled Te solution and with the travelling. Introduction. - CdTe crystals for nuclear radia- tion detectors are usually grown from a slowly cooled solution

Paris-Sud XI, Université de

50

Luminescence Enhancement of CdTe Nanostructures in LaF3:Ce/CdTe...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Enhancement of CdTe Nanostructures in LaF3:CeCdTe Nanocomposites. Luminescence Enhancement of CdTe Nanostructures in LaF3:CeCdTe Nanocomposites. Abstract: Radiation detection...

51

Midea: Proposed Penalty (2010-SE-0110, 2012-SE-1402, 2012-SE-1404) |  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Proposed Penalty (2010-SE-0110, 2012-SE-1402, 2012-SE-1404) Proposed Penalty (2010-SE-0110, 2012-SE-1402, 2012-SE-1404) Midea: Proposed Penalty (2010-SE-0110, 2012-SE-1402, 2012-SE-1404) November 20, 2012 DOE alleged in a Notice of Proposed Civil Penalty that Midea America Corp., Hefei Hualing Co., Ltd., and China Refrigeration Industry Co., Ltd. manufactured and distributed noncompliant refrigerator-freezers and freezers in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Midea: Proposed Penalty (2010-SE-0110, 2012-SE-1402, 2012-SE-1404)

52

Development of ZnTe:Cu Contacts for CdTe Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-08-320  

SciTech Connect (OSTI)

The main focus of the work at NREL was on the development of Cu-doped ZnTe contacts to CdTe solar cells in the substrate configuration. The work performed under the CRADA utilized the substrate device structure used at NREL previously. All fabrication was performed at NREL. We worked on the development of Cu-doped ZnTe as well as variety of other contacts such as Sb-doped ZnTe, CuxTe, and MoSe2. We were able to optimize the contacts to improve device parameters. The improvement was obtained primarily through increasing the open-circuit voltage, to values as high as 760 mV, leading to device efficiencies of 7%.

Dhere, R.

2012-04-01T23:59:59.000Z

53

TE Connectivity Finds Answers in Tomography  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

TE Connectivity Finds Answers in Tomography TE Connectivity Finds Answers in Tomography Print Thursday, 22 August 2013 10:50 TE Connectivity is a world leader in connectivity-the...

54

IR spectroscopy of lattice vibrations and comparative analysis of the ZnTe/CdTe quantum-dot superlattices on the GaAs substrate and with the ZnTe and CdTe buffer layers  

SciTech Connect (OSTI)

A comparative analysis of multiperiod ZnTe/CdTe superlattices with the CdTe quantum dots grown by molecular beam epitaxy on the GaAs substrate with the ZnTe and CdTe buffer layers is carried out. The elastic-stress-induced shifts of eigenfrequencies of the modes of the CdTe- and ZnTe-like vibrations of materials forming similar superlattices but grown on different buffer ZnTe and CdTe layers are compared. The conditions of formation of quantum dots in the ZnTe/CdTe superlattices on the ZnTe and CdTe buffer layers differ radically.

Kozyrev, S. P. [Russian Academy of Sciences, Lebedev Institute of Physics (Russian Federation)], E-mail: skozyrev@sci.lebedev.ru

2009-07-15T23:59:59.000Z

55

CdTe/CdSe/CdTe heterostructure nanorods and I-III-VI? nanocrystals: synthesis and characterization.  

E-Print Network [OSTI]

??Semiconductor nanocrystals are interesting candidates as new light-absorbing materials for photovoltaic (PV) devices. They can be dispersed in solvents and cheaply deposited at low-temperature on… (more)

Koo, Bonil

2010-01-01T23:59:59.000Z

56

Midea: Amended Noncompliance Determination (2010-SE-0110, 2012-SE-1402) |  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Amended Noncompliance Determination (2010-SE-0110, Amended Noncompliance Determination (2010-SE-0110, 2012-SE-1402) Midea: Amended Noncompliance Determination (2010-SE-0110, 2012-SE-1402) November 26, 2012 DOE issued an Amended Notice of Noncompliance Determination to Midea America Corp., Hefei Hualing Co., Ltd., and China Refrigeration Industry Co., Ltd. finding that basic model HD-146F, a refrigerator-freezer, and basic model HS-390C, a freezer, do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. Midea must immediately notify each person (or company) to whom Midea distributed the noncompliant products that the product does not meet Federal standards. In addition, Midea must provide to DOE documents and records showing the number of units Midea distributed

57

About-PHaSe-EFRC  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

About LGRT Conte Buildings The University of Massachusetts Amherst Energy Frontier Research Center (EFRC) - Polymer-Based Materials for Harvesting Solar Energy, PHaSE - is one of...

58

Upconversion Luminescence of CdTe Nanoparticles. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of CdTe Nanoparticles. Upconversion Luminescence of CdTe Nanoparticles. Abstract: Efficient upconversion luninescence is observed from CdTe nanoparticles in solution and...

59

Diffusion of Te vacancy and interstitials of Te, Cl, O, S, P and Sb in CdTe: A density functional theory study  

E-Print Network [OSTI]

Diffusion of Te vacancy and interstitials of Te, Cl, O, S, P and Sb in CdTe: A density functional profiles in CdTe of native, Te adatom and vacancy, and anionic non-native interstitial adatoms P, Sb, O, S B.V. All rights reserved. 1. Introduction Cadmium telluride (CdTe) based thin films have emerged

Khare, Sanjay V.

60

LgCOOleS, Se*&,,  

Office of Legacy Management (LM)

; "Ofice Mem ; "Ofice Mem . m *" ' ' *IilCl:t Consists of & " ' / Of LgCOOleS, Se*&,, es * UNITED STATES G-OVERNM NT <;$)~~ 3i;t-j /Lj ' , ~~~' jCjC;O c) TO I LT. :s. Clnr!te, ,;or,~~~,~' , -.,,..:-:-Y"' r~-;i~.L.-Z.:r DATE: uL"C!.,?r 6, 1' ?L9 A meting mj: !1:1d in i:1CG bet,. _ ^ .- ',cel representatives 51 ;.2rshz:i sr.3 the A;.35 to nwotiztc .the prices for producing FY-1: (brow oxise), _1 I%-; (green salt and .?T-12 (he::.-iZluoriic) fcr the sc2or.d 3,uarter of fisc21 1950, (Cctober, Z:ove-r.ber, 2c?Ce.:lxr l?L?). Th-: foll;:~:i;.E xttcndcd the mztin:: "-Tsh-:, -.,q ..__ _id.l - 1;. 2. 9till;Iell

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Determination of Mass Attenuation Coefficients for CuInSe2 and CuGaSe2 Semiconductors  

SciTech Connect (OSTI)

This work presents mass attenuation coefficients values of CuInSe2 and CuGaSe2 semiconductor thin films commonly used in photovoltaic devices. The mass attenuation coefficients were measured at different energies from 11.9 to 37.3 keV by using the secondary excitation method. Monochromatic photons were obtained using the Br, Sr, Mo, Cd, Te, Ba and Nd secondary targets. 59.5 keV gamma rays emitted from an annular Am-241 radioactive source were used to excite secondary targets. Characteristic X-rays emitted from secondary target were counted by a Si(Li) detector with a resolution of 0.16 keV at 5.9 keV. The measured values were compared with theoretical values calculated using WinXCOM program.

Celik, Ahmet; Cevik, Ugur; Baltas, Hasan; Bacaksiz, Emin [Department of Physics, Faculty of Arts and Sciences, Karadeniz Technical University, 61080 Trabzon (Turkey)

2007-04-23T23:59:59.000Z

62

Ann bay lodyans 10 / Se Bryant Freeman ("Tonton Liben") ki pare ti liv sa a  

E-Print Network [OSTI]

pou mete tet nou ansanm pou nou fouye, fouye, plante. Avek sa, n a jwenn sa yo rele Id peyi Dayiti." Achedou Banel, Senmak 9 BOUJWA AK ABITAN Te gen yon boujwa Potoprens ki te soti nan bel machin li pou ale Ench. Le I rive andeyo, li pedi wout...KU ScholarWorks | http://kuscholarworks.ku.edu Ann Bay Lodyans 10 se Bryant Freeman (“Tonton Liben”) ki pare ti liv sa a 2000 by Bryant C. Freeman, ed. This work has been made available by the University of Kansas Libraries’ Office of Scholarly...

Freeman, Bryant C., ed.

2000-01-01T23:59:59.000Z

63

X-ray standing wave study of CdTe/MnTe/CdTe(001) heterointerfaces J. C. Boulliard,a)  

E-Print Network [OSTI]

features of the first stages of growth of ultrathin pseudomorphic MnTe 001 strained layers buried in CdTe on CdTe 001 substrates. Experiments with 004 and 113 reflecting planes show evidence of the presenceTe layers grown in CdTe 001 by molecular beam epitaxy. The results will be compared to high resolution

Boyer, Edmond

64

Observation de super-rseaux CdTe-HgTe par microscopie lectronique en transmission  

E-Print Network [OSTI]

-conducteurs II-VI a été beaucoup plus tardive [2]. Dans cette dernière famille, le système CdTe- HgTe présente l'avantage d'un accord de maille quasi parfait entre les deux composés (a = 0,648 nm pour CdTe contre a = 0 JET MOL�CULAIRE. - Les super- réseaux CdTe-HgTe ont été épitaxiés sur un substrat CdTe d

Paris-Sud XI, Université de

65

TE Connectivity Finds Answers in Tomography  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

TE Connectivity Finds Answers in TE Connectivity Finds Answers in Tomography TE Connectivity Finds Answers in Tomography Print Thursday, 22 August 2013 10:50 TE Connectivity is a world leader in connectivity-the $13 billion global company designs and manufactures more than 500,000 different electronic connectivity products for the automotive, energy, industrial, broadband communications, consumer device, healthcare, aerospace, and defense industries. TE Connectivity has a long-standing commitment to innovation and engineering excellence. Their products help address challenges arising from companies' need for energy efficiency, always-on communications, and ever-increasing productivity. Recently, a team led by TE's senior manager of materials development, Dr. Jerzy Gazda (at left), has been investigating how ALS tomography capabilities can help the company develop more efficient connectors.

66

Si, CdTe and CdZnTe radiation detectors for imaging applications.  

E-Print Network [OSTI]

??The structure and operation of CdTe, CdZnTe and Si pixel detectors based on crystalline semiconductors, bump bonding and CMOS technology and developed mainly at Oy… (more)

Schulman, Tom

2006-01-01T23:59:59.000Z

67

Recycling of CdTe photovoltaic waste  

DOE Patents [OSTI]

A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate and electrolyzing the leachate to separate Cd from Te, wherein the Te is deposits onto a cathode while the Cd remains in solution.

Goozner, Robert E. (Charlotte, NC); Long, Mark O. (Charlotte, NC); Drinkard, Jr., William F. (Charlotte, NC)

1999-01-01T23:59:59.000Z

68

Recycling ZnTe, CdTe, and Other Compound Semiconductors by Ambipolar Electrolysis  

E-Print Network [OSTI]

The electrochemical behavior of ZnTe and CdTe compound semiconductors dissolved in molten ZnCl[subscript 2] and equimolar CdCl[subscript 2]–KCl, respectively, was examined. In these melts dissolved Te is present as the ...

Osswald, Sebastian

69

Semitransparent ultrathin CdTe solar cells Semitransparent ultrathin CdTe solar cells and durabilityand durability  

E-Print Network [OSTI]

Semitransparent ultrathin CdTe solar cells Semitransparent ultrathin CdTe solar cells core technology is built around · sputter deposition · CdS/CdTe cell structure · Extensive IPTe cellsultrathin CdTe cells X26 stateoftheart compared with other CdTe deposition: [X26 technology has been

Rollins, Andrew M.

70

Possibility of doping and using ZnSe, CdS, and GaP layers as down converters of Si and CuInSe2 solar cells  

Science Journals Connector (OSTI)

The possibility and reasonability of developing down converters of Si and CuInSe2 solar cells based on Ge2P- and GaSb-doped GaP, ZnTe, and CdS is discussed. The case is considered when...p–n heterojunction, and t...

M. S. Saidov

2007-09-01T23:59:59.000Z

71

Response of Cds/CdTe Devices to Te Exposure of Back Contact: Preprint  

SciTech Connect (OSTI)

Theoretical predictions of thin-film CdS/CdTe photovoltaic (PV) devices have suggested performance may be improved by reducing recombination due to Te-vacancy (VTe) or Te-interstitial (Tei) defects. Although formation of these intrinsic defects is likely influenced by CdTe deposition parameters, it also may be coupled to formation of beneficial cadmium vacancy (VCd) defects. If this is true, reducing potential effects of VTe or Tei may be difficult without also reducing the density of VCd. In contrast, post-deposition processes can sometimes afford a greater degree of defect control. Here we explore a post-deposition process that appears to influence the Te-related defects in polycrystalline CdTe. Specifically, we have exposed the CdTe surface to Te prior to ZnTe:Cu/Ti contact-interface formation with the goal of reducing VTe but without significantly reducing VCd. Initial results show that when this modified contact is used on a CdCl2-treated CdS/CdTe device, significantly poorer device performance results. This suggests two things: First, the amount of free-Te available during contact formation (either from chemical etching or CuTe or ZnTe deposition) may be a more important parameter to device performance than previously appreciated. Second, if processes have been used to reduce the effect of VTe (e.g., oxygen and chlorine additions to the CdTe), adding even a small amount of Te may produce detrimental defects.

Gessert, T. A.; Burst, J. M.; Ma, J.; Wei, S. H.; Kuciauskas, D.; Barnes, T. M.; Duenow, J. N.; Young, M. R.; Rance, W. L.; Li, J. V.; Dippo, P.

2012-06-01T23:59:59.000Z

72

High performance Zintl phase TE materials with embedded nanoparticles...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

performance Zintl phase TE materials with embedded nanoparticles High performance Zintl phase TE materials with embedded nanoparticles Performance of zintl phase thermoelectric...

73

CdSxTe1-x Alloying in CdS/CdTe Solar Cells  

SciTech Connect (OSTI)

A CdS{sub x}Te{sub 1-x} layer forms by interdiffusion of CdS and CdTe during the fabrication of thin film CdTe photovoltaic (PV) devices. The CdS{sub x}Te{sub 1-x} layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work has indicated that the electrical junction is located in this interdiffused CdS{sub x}Te{sub 1-x} region. Further understanding, however, is essential to predict the role of this CdS{sub x}Te{sub 1-x} layer in the operation of CdS/CdTe devices. In this study, CdS{sub x}Te{sub 1-x} alloy films were deposited by radio-frequency magnetron sputtering and coevaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and coevaporated CdS{sub x}Te{sub 1-x} films of lower S content (x < 0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl{sub 2} heat treatment at {approx}400 C for 5 min. Films sputtered in a 1% O{sub 2}/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl{sub 2} heat treatment. Films sputtered in O{sub 2} partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously for sputtered oxygenated CdS (CdS:O) films.

Duenow, J. N.; Dhere, R. G.; Moutinho, H. R.; To, B.; Pankow, J. W.; Kuciauskas, D.; Gessert, T. A.

2011-01-01T23:59:59.000Z

74

Energy loss rate of a charged particle in HgTe/(HgTe, CdTe) quantum wells  

SciTech Connect (OSTI)

The energy loss rate (ELR) of a charged particle in a HgTe/(HgTe, CdTe) quantum well is investigated. We consider scattering of a charged particle by the bulk insulating states in this type of topological insulator. It is found that the ELR characteristics due to the intraband excitation have a linear energy dependence while those due to interband excitation depend on the energy exponentially. An interesting quantitative result is that for a large range of the incident energy, the mean inelastic scattering rate is around a few terahertz.

Chen, Qinjun; Sin Ang, Yee [School of Physics, University of Wollongong, New South Wales 2522 (Australia)] [School of Physics, University of Wollongong, New South Wales 2522 (Australia); Wang, Xiaolin [Institute for Superconducting and Electronic Materials, University of Wollongong, New South Wales 2522 (Australia)] [Institute for Superconducting and Electronic Materials, University of Wollongong, New South Wales 2522 (Australia); Lewis, R. A.; Zhang, Chao [School of Physics, University of Wollongong, New South Wales 2522 (Australia) [School of Physics, University of Wollongong, New South Wales 2522 (Australia); Institute for Superconducting and Electronic Materials, University of Wollongong, New South Wales 2522 (Australia)

2013-11-04T23:59:59.000Z

75

Recycling of CdTe photovoltaic waste  

DOE Patents [OSTI]

A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base.

Goozner, Robert E. (Charlotte, NC); Long, Mark O. (Charlotte, NC); Drinkard, Jr., William F. (Charlotte, NC)

1999-04-27T23:59:59.000Z

76

Infrared spectroscopy of lattice vibrations in ZnTe/CdTe superlattices with quantum dots on the GaAs substrate with the ZnTe buffer layer  

SciTech Connect (OSTI)

The results of the analysis of the infrared lattice reflectance spectra of multiperiod ZnTe/CdTe superlattices with CdTe quantum dots are reported. The samples are grown by molecular beam epitaxy on the GaAs substrate with the ZnTe buffer layer. Due to the large number of periods of the superlattices, it is possible to observe CdTe-like vibration modes in the quantum dots, i.e., the dislocation-free stressed islands formed during the growth due to relaxation of elastic stresses between the ZnTe and CdTe layers are markedly different in their lattice parameters. From the frequency shifts of the CdTe- and ZnTe-like vibration modes with respect to the corresponding modes in the unstressed materials, it is possible to estimate the level of elastic stresses.

Kozyrev, S. P. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)], E-mail: skozyrev@sci.lebedev.ru

2009-03-15T23:59:59.000Z

77

Formation and optical properties of CdTe/ZnTe nanostructures with different CdTe thicknesses grown on Si (100) substrates  

SciTech Connect (OSTI)

Atomic force microscopy (AFM) and photoluminescence (PL) measurements were carried out to investigate the formation and the optical properties of CdTe/ZnTe nanostructures with various CdTe thicknesses grown on Si (100) substrates by using molecular beam epitaxy and atomic layer epitaxy. AFM images showed that uniform CdTe/ZnTe quantum dots with a CdTe layer thickness of 2.5 ML (monolayer) were formed on Si (100) substrates. The excitonic peaks corresponding to transitions from the ground electronic subband to the ground heavy-hole band in the CdTe/ZnTe nanostructures shifted to a lower energy with increasing thickness of the CdTe layer. The activation energies of the carriers confined in the CdTe/ZnTe nanostructures grown on Si (100) substrates were obtained from the temperature-dependent PL spectra. The present observations can help improve understanding of the formation and the optical properties in CdTe/ZnTe nanostructures with different CdTe thicknesses grown on Si (100) substrates.

Lee, H. S.; Park, H. L.; Lee, I.; Kim, T. W. [Department of Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of)

2007-11-15T23:59:59.000Z

78

Growth and optical properties of CdTe quantum dots in ZnTe nanowires  

SciTech Connect (OSTI)

We report on the formation of optically active CdTe quantum dots in ZnTe nanowires. The CdTe/ZnTe nanostructures have been grown by a gold nanocatalyst assisted molecular beam epitaxy in a vapor-liquid solid growth process. The presence of CdTe insertions in ZnTe nanowire results in the appearance of a strong photoluminescence band in the 2.0 eV-2.25 eV energy range. Spatially resolved photoluminescence measurements reveal that this broad emission consists of several sharp lines with the spectral width of about 2 meV. The large degree of linear polarization of these individual emission lines confirms their nanowire origin, whereas the zero-dimensional confinement is proved by photon correlation spectroscopy.

Wojnar, Piotr; Janik, Elzbieta; Baczewski, Lech T.; Kret, Slawomir; Karczewski, G.; Wojtowicz, Tomasz [Institute of Physics, Polish Academy of Sciences, Al Lotnikow 32/46, 02-668 Warsaw (Poland); Goryca, Mateusz; Kazimierczuk, Tomasz; Kossacki, Piotr [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland)

2011-09-12T23:59:59.000Z

79

Templates-Resources-PHaSe-EFRC  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

templates 36 inch high by 48 inch wide, landscape poster template with PHaSE acknowledgements (PPT file download) 36 inch high by 48 inch wide, landscape poster template with PHaSE...

80

Charge transfer in liquid semiconductors: The K-Te system  

Science Journals Connector (OSTI)

The neutron diffraction patterns of molten KxTe1-x alloys for x=0.12 and x-0.50 demonstrate the persistence of covalently bonded tellurium in the liquid. In the case of liquid K0.12Te0.88, the measured structure is domianted by the Te-Te contribution, and is remarkably similar to that of pure liquid tellurium. The equiatomic alloy K0.50Te0.50 is shown to contain mostly Te pairs which are identified with Zintl ions, Te22-. The presence of these ions explains the semiconducting behavior of these alloys deduced from recent electrical transport measurements.

J. Fortner, Marie-Louise Saboungi, and J. E. Enderby

1992-08-31T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Phonon blocking by two dimensional electron gas in polar CdTe/PbTe heterojunctions  

SciTech Connect (OSTI)

Narrow-gap lead telluride crystal is an important thermoelectric and mid-infrared material in which phonon functionality is a critical issue to be explored. In this Letter, efficient phonon blockage by forming a polar CdTe/PbTe heterojunction is explicitly observed by Raman scattering. The unique phonon screening effect can be interpreted by recent discovery of high-density two dimensional electrons at the polar CdTe/PbTe(111) interface which paves a way for design and fabrication of thermoelectric devices.

Zhang, Bingpo; Cai, Chunfeng; Zhu, He; Wu, Feifei; Ye, Zhenyu; Chen, Yongyue; Li, Ruifeng; Kong, Weiguang; Wu, Huizhen, E-mail: hzwu@zju.edu.cn [Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027 (China)

2014-04-21T23:59:59.000Z

82

ZnTe: Gibbs free energy  

Science Journals Connector (OSTI)

This document is part of Volume 44 ‘Semiconductors’, Subvolume B ‘New Data and Updates for II-VI Compounds’ of Landolt-Börnstein Group III ‘Condensed Matter’. It contains data on ZnTe (zinc telluride), Element...

J. Gutowski; K. Sebald; T. Voss

2009-01-01T23:59:59.000Z

83

Facultad de Ciencias Departamento de Fsica Te  

E-Print Network [OSTI]

Facultad de Ciencias Departamento de Fâ??�sica Te â?? orica Jet production in charged current deep Ciencias Fâ??�sicas'' by M â?? onica Luisa V â?? azquez Acosta Director : Juan Terr â?? on Cuadrado 16/12/2002 #12; #12; Facultad de Ciencias Departamento de Fâ??�sica Te â?? orica Producci â?? on de chorros hadr â?? onicos en

84

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

85

Engineered Products: Noncompliance Determination (2012-SE-5401) |  

Broader source: Energy.gov (indexed) [DOE]

Noncompliance Determination (2012-SE-5401) Noncompliance Determination (2012-SE-5401) Engineered Products: Noncompliance Determination (2012-SE-5401) July 26, 2012 DOE issued a Notice of Noncompliance Determination to Engineered Products Company (EPCO) finding that basic model 15701 of metal halide lamp fixture does not comport with the energy conservation standards. DOE determined the product was noncompliant based on the company's own testing. EPCO must immediately notify each person (or company) to whom EPCO distributed the noncompliant product that the product does not meet Federal standards. Engineered Products: Noncompliance Determination (2012-SE-5401) More Documents & Publications Engineered Products: Proposed Penalty (2012-SE-5401) Engineered Products: Order (2012-SE-5401) Teddico: Noncompliance Determination (2012-SE-5409

86

CdTe AND CdTe : Hg ALLOYS CRYSTAL GROWTH USING STOICHIOMETRIC AND OFF-STOICHIOMETRIC  

E-Print Network [OSTI]

123 CdTe AND CdTe : Hg ALLOYS CRYSTAL GROWTH USING STOICHIOMETRIC AND OFF-STOICHIOMETRIC ZONE.-Briand, 92190 Meudon/Bellevue, France Résumé. 2014 En vue de la croissance de cristaux de CdTe de haute cristaux semi-isolants Cd0, 9Hg0, 1Te. Abstract. 2014 Some aspects of the thermodynamic state of CdTe

Paris-Sud XI, Université de

87

2010 Archives-News-PHaSe-EFRC  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

13 May 2010. There was strong representation of industrial scientists interested in solar energy at the meeting. (052010) Work at PHaSE is featured at the "Massachusetts...

88

Aktiebolaget SKF SE-415 50 Gteborg, Sweden  

E-Print Network [OSTI]

Aktiebolaget SKF SE-415 50 Göteborg, Sweden Tel +46-31-337 10 00 Fax +46-31-337 28 32 www;Aktiebolaget SKF SE-415 50 Göteborg, Sweden Tel +46-31-337 10 00 Fax +46-31-337 28 32 www.skf.com from

Cambridge, University of

89

SeWave | Open Energy Information  

Open Energy Info (EERE)

form form View source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon » SeWave Jump to: navigation, search Name SeWave Place Denmark Zip FO-110 Product Denmark-based 50:50 JV between UK's Wavegen and Faroese electricity company SEV to to design and build a tunnelled demonstration wave power plant in the Faroes Islands. References SeWave[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This company is listed in the Marine and Hydrokinetic Technology Database. This article is a stub. You can help OpenEI by expanding it. SeWave is a company located in Denmark . References ↑ "SeWave"

90

The Nuclear Moments of Se79  

Science Journals Connector (OSTI)

Microwave measurements of the J=2?3 rotational transition of OCSe containing the radioactive-nucleus Se79 have established the Se79 spin as 72 and the Se79 quadrupole moment as 0.7×10-24 cm2±20 percent. The quadrupole coupling constant eqQ is 752.09±0.05 Mc/sec. The magnetic moment of Se79 has been determined as -1.015±0.015 nuclear magnetons by observation of the Zeeman splitting of one hyperfine component. The 72 spin and the large positive Q are inconsistent with the single-particle nuclear-shell model, but suggest the configuration (g92)272. This assignment is substantiated by the negative magnetic moment.Measurement of isotopic shifts gives a value for the Se79 mass, and an odd-even mass difference of 2.4 millimass units for this nucleus.

W. A. Hardy; G. Silvey; C. H. Townes; B. F. Burke; M. W. P. Strandberg; George W. Parker; Victor W. Cohen

1953-12-15T23:59:59.000Z

91

Ann bay lodyans 3 / se Bryant Freeman ("Tonton Liben") ki pare ti liv sa a  

E-Print Network [OSTI]

la di: "Sa fe 2 fwa." Bourik la fe yon twazyem fopa. Neg la desann bourik la ak madanm li, epi li touye bourik la. Madanm li di: "Poukisa ou fe sa?" Neg la d i : " S a fe yon fwa." Se konsa zarenyen te | r p rive touye ni ti sourit, ni YMk c n.... "Monkonpe Chen, m raze net. Ou pa ta gen yon ti pyas prete m? M a remet ou li denmen a midi." Konpe Chen di li: "Men, pran sa. Denmen a midi m a pase chache li." Zarenyen reponn li: 2 "Wi, pa gen pwoblem. Ou met vini, m ap pare pou ou." Apre sa...

Freeman, Bryant C., ed.

2000-01-01T23:59:59.000Z

92

Ann bay lodyans 8 / se Bryant Freeman ("Tonton Liben") ki pare ti liv sa a  

E-Print Network [OSTI]

frswtav n a c o moun ki pi gran. $2.00 Rawoul Jilyen 0-8400-5116-6 y "rouowup 110? 5Q200 FREEMAN, BRYANT ANN BAY LODYANS VOL.8 >UT MOUN KONN LI. IT MOUN KONN EKRI. LANG 06/14/00 ... ki konn manje diri m Ian. M pran ou jodi a. M te di nenpot bet m kenbe nan jaden an, m ap koupe tet li. Se ou m pran. M pral regie zafe ou." Toti kdmanse kriye: "Met, fe pa m, non!" Gwoje fache sou li: "Sa k rele konsa? Vale redi mwen 2 redi...

Freeman, Bryant C., ed.

2000-01-01T23:59:59.000Z

93

Ann bay lodyans 5 / se Bryant Freeman ("Tonton Liben") ki pare ti liv sa a  

E-Print Network [OSTI]

genyen. Tijo we yon tig ki te tonbe nan yon gwo twou. Li pa t kapab soti paske twou a fon. Kounye a tig la prizonye. Li di Tijo: "Ou se yon bon ti gason, ede m soti, souple." Tijo reponn: "Si mwen retire ou nan twou a, ou ap manje m." Tig la di: "O... non, bon ti pitit mwen, mwen p ap manje ou. Pa panse sa, non." Tijo mande li: "Eske ou ap pwomet mwen ou p ap manje m?" "Wi, pwomes fet," tig la di I avek gwo vwa li. Tijo ede tig la soti nan twou a. Le tig la fin soti, li vole sou T i j...

Freeman, Bryant C.

2000-01-01T23:59:59.000Z

94

Average resonance capture study of Te124  

Science Journals Connector (OSTI)

An average resonance capture study of Te124 was carried out by bombarding samples of Te123 with 2- and 24-keV neutron beams. The complete set of 0+, 1+, 2+ states disclosed by the experiment is consistent with the data of Robinson, Hamilton, and Snelling, demonstrating that there are no undetected states of these spins (especially 0+ states) below about 2500 keV. In particular, proposed 0+ levels at 1156 and 1290 keV are ruled out. This impacts various attempted interpretations in terms of intruder states, U(5), and O(6) symmetries.

R. F. Casten; J.-Y. Zhang; B.-C. Liao

1991-07-01T23:59:59.000Z

95

THE DEFECT STRUCTURE OF CdTe (*) F. A. KRGER  

E-Print Network [OSTI]

THE DEFECT STRUCTURE OF CdTe (*) F. A. KR�GER David Packard Professor of Electrical Engineering haute résistivité. Abstract. 2014 Evidence concerning the defect structure of CdTe is reviewed

Paris-Sud XI, Université de

96

High Performance of InSe and InSeGraphene Heterostructure Based Wide Spectral Photodetectors  

E-Print Network [OSTI]

We investigated both the few-layered InSe/metal photodetectors and InSe/graphene heterostructure photodetectors. Both types of the photodetectors show broad spectral range at 400-1000 nm. The few-layered InSe/metal photodetectors have higher photoresponsivity than that of the InSe/graphene heterostructure photodetectors. However, the InSe/graphene heterostructure photodetectors possesses a fast response time down to 100 {\\mu}s, which is about 40 times faster than that of the InSe/metal devices. The design of 2D crystal/graphene heterostructure could be important for high performace optoelectronic devices.

Luo, Wengang; Hu, Pingan; Cai, Kaiming; Feng, Qi; Yan, Faguang; Yan, Tengfei; Zhang, Xinhui; Wang, Kaiyou

2015-01-01T23:59:59.000Z

97

PRESENT LIMITATIONS OF CdTe DETECTORS IN NUCLEAR MEDICINE  

E-Print Network [OSTI]

365 PRESENT LIMITATIONS OF CdTe DETECTORS IN NUCLEAR MEDICINE R. ALLEMAND, P. BOUTEILLER, M. LAVAL quality criteria, it is necessary to compare Cd-Te detectors results (or estimated characteristics) with other methods (i. e. 8cintillation cameras) in order to know the effective interest of Cd-Te in nuclear

Boyer, Edmond

98

Hybrid functional calculations of a Te antisite in bulk CdTe.  

E-Print Network [OSTI]

?? The detection of gamma-rays is an important issue in a cast array ofindustries. CdTe is a semiconductor used for gamma-ray detectors whichcan operate at… (more)

Árdal, Kristinn Björgvin

2013-01-01T23:59:59.000Z

99

Excited states of acceptors in CdTe and ZnTe  

Science Journals Connector (OSTI)

Higher excited states of acceptors in CdTe and ZnTe are obtained by using the Baldereschi and Lipari spherical model including the cubic correction and the central-cell effect. This is done by solving the coupled radial equations by the finite-element method with Arnoldi's algorithm, which gives several (?20) low-lying states simultaneously. Our procedure allows one to determine very accurately the host band-structure parameters. In the case of CdTe we obtain the Luttinger parameters ?1 = 5.30, ?2 = 1.62, ?3 = 2.10 and the dielectric constant ?0 = 9.3. For ZnTe we obtain ?1 = 3.80, ?2 = 0.86, ?3 = 1.32 and ?0 = 9.4.

M. Said; M.A. Kanehisa

1990-01-01T23:59:59.000Z

100

Pioneer Hall 615 Fulton Street SE  

E-Print Network [OSTI]

Pioneer Hall 615 Fulton Street SE Minneapolis, MN 55455 Office: 612.626.3333 pioneer if documented for violating a housing policy if their finals are completed. Turn off all lights and unplug

Janssen, Michel

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

The PeTroleum InsTITuTe Annual report 2009 The PeTroleum InsTITuTe  

E-Print Network [OSTI]

The PeTroleum InsTITuTe Annual report 2009 The PeTroleum InsTITuTe Annual report - 2009 online version #12;The PeTroleum InsTITuTe Annual report 2009 #12;The PeTroleum InsTITuTe Annual report 2009 overvIew Annual Report 2009 THE PETROLEUM INSTITUTE Office of the President 4 OFFICE OF THE PRESIDENT DR

102

Influence of CdTe thickness on structural and electrical properties of CdTe/CdS solar cells  

E-Print Network [OSTI]

Influence of CdTe thickness on structural and electrical properties of CdTe/CdS solar cells A a b s t r a c ta r t i c l e i n f o Available online xxxx Keywords: Solar cells CdCl2 CdTe Thin absorbers Due to its high scalability and low production cost, CdTe solar cells have shown a very strong

Romeo, Alessandro

103

Typesetting Posters withTypesetting Posters with LaTeXLaTeX  

E-Print Network [OSTI]

Typesetting Posters withTypesetting Posters with LaTeXLaTeX:: A Practical GuideA Practical Guide?What is the Problem? ·· Posters are used to present technicalPosters are used to present technical material at some conferencesmaterial at some conferences ­­ In some cases these posters may be very largeIn some cases these posters

Stephenson, Ben

104

Mechanism of terahertz photoconductivity in semimetallic HgTe/CdHgTe quantum wells  

SciTech Connect (OSTI)

Terahertz photoconductivity in magnetic fields in semimetallic HgTe/CdHgTe quantum wells has been studied. The main contribution to photoconductivity comes from a signal that appears as a result of electron-gas heating. It is shown that, with the cyclotron resonance conditions satisfied, the photoconductivity signal is composed of cyclotron-resonance and bolometric components. However, in this case too, the bolometric contribution predominates.

Vasilyev, Yu. B., E-mail: yu.vasilyev@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Mikhailov, N. N. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Gouider, F. [Institut fuer Angewandte Physik (Germany); Vasilyeva, G. Yu. [St. Petersburg State Polytechnic University (Russian Federation); Nachtwei, G. [Institut fuer Angewandte Physik (Germany)

2012-05-15T23:59:59.000Z

105

COMPARISON OF CSS-CdTe AND PVD-CdTe WITH DIFFERENT ACTIVATION PROCESSES , G. Khrypunov2,4  

E-Print Network [OSTI]

University, Leicestershire, LE11 3TU, UK ABSTRACT: CdTe polycrystalline thin film solar cells have a strong AM1.5 illumination. Amongst several attractive features high chemical stability of CdTe and a simple simplification has been done by substituting the CdCl2 step by treating CdTe films in an atmosphere containing

Romeo, Alessandro

106

THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te-CdTe HETEROJUNCTIONS (1)  

E-Print Network [OSTI]

195 THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te This paper is a short status report on the continuing development of Cu22014xTe-CdTe thin film solar cells Company has had a conti- nuous effort on thin film solar cells for the past four and a half years

Paris-Sud XI, Université de

107

First-principles study of the electronic and structural properties of (CdTe)n/(ZnTe)n superlattices  

Science Journals Connector (OSTI)

Abstract We present the results of a first-principles study of the electronic and structural properties of binary CdTe and ZnTe compounds and their (CdTe)n/(ZnTe)n superlattices (SLs). The computational method is based on the full-potential linear muffin tin orbitals method (FP-LMTO) augmented by a plane-wave basis (PLW). The exchange and correlation energy is described in the local density approximation (LDA) using the Perdew–Wang parameterization including a generalized gradient approximation (GGA). The calculated structural properties of CdTe and ZnTe compounds are in good agreement with available experimental and theoretical data. We have also carried out band-structure calculations for the binary CdTe and ZnTe compounds and their (CdTe)n/(ZnTe)n superlattices (SLs). From the results of the electronic properties, we find that the parent material CdTe and ZnTe and their superlattices have a direct band gaps. The fundamental band gap decreases with increasing the number of monolayer n.

M. Boucharef; S. Benalia; D. Rached; M. Merabet; L. Djoudi; B. Abidri; N. Benkhettou

2014-01-01T23:59:59.000Z

108

Charge separation and transfer in hybrid type II tunneling structures of CdTe and CdSe nanocrystals.  

E-Print Network [OSTI]

??Halbleiter-Nanokristalle sind eine besondere Materialklasse in den Nanowissenschaften. Sie sind kleinste Halbleiter-Kristalle, die an ihrer Oberfläche mittels organischer Chemie passiviert wurden. Damit können Sie auf… (more)

Groß, Dieter

2013-01-01T23:59:59.000Z

109

Goodman Manufacturing: Noncompliance Determination (2011-SE-4301) |  

Broader source: Energy.gov (indexed) [DOE]

Noncompliance Determination (2011-SE-4301) Noncompliance Determination (2011-SE-4301) Goodman Manufacturing: Noncompliance Determination (2011-SE-4301) October 17, 2011 DOE issued a Notice of Noncompliance Determination to Goodman Manufacturing finding that model CPC180XXX3BXXXAA (CPC180*) of commercial package air conditioner does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing . Goodman must immediately notify each person (or company) to whom Goodmany distributed the noncompliant products that the product does not meet Federal standards. In addition, Goodman must provide to DOE documents and records showing the number of units Goodman distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil

110

Summit Manufacturing: Noncompliance Determination (2010-SE-0303) |  

Broader source: Energy.gov (indexed) [DOE]

Summit Manufacturing: Noncompliance Determination (2010-SE-0303) Summit Manufacturing: Noncompliance Determination (2010-SE-0303) Summit Manufacturing: Noncompliance Determination (2010-SE-0303) May 28, 2010 DOE issued a Notice of Noncompliance Determination to Summit Manufacturing, Inc. finding that 4SHP13LE136P + 15001+CA042A964+TDR basic model, a split-system air conditioning heat pump with a heat pump coil, does not comport with the energy conservation standards. DOE determined the product was noncompliant based on the company's own testing. Summit must immediately notify each person (or company) to whom Summit distributed the noncompliant products that the product does not meet Federal standards. In addition, Summit must provide to DOE documents and records showing the number of units Summit distributed and to whom. The manufacturer and/or

111

I2SE | Open Energy Information  

Open Energy Info (EERE)

I2SE I2SE Jump to: navigation, search Name I2SE Place Leipzig, Germany Zip 4103 Sector Efficiency Product IT company providing solutions for energy efficiency and data transmission. Coordinates 51.3452°, 12.38594° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":51.3452,"lon":12.38594,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

112

Luminescence Enhancement of CdTe Nanostructures in LaF3:Ce/CdTe Nanocomposites  

SciTech Connect (OSTI)

Radiation detection demands new scintillators with high quantum efficiency, high energy resolution and short luminescence lifetimes. Nanocomposites consisting of quantum dots and Ce3+ doped nanophosphors may be able to meet these requirements. Here we report the luminescence of LaF3:Ce/CdTe nanocomposites which were synthesized by a wet chemistry method. In LaF3:Ce/CdTe nanocomposites the CdTe quantum dots are converted into nanowires, while in LaF3/CdTe nanocomposites no such conversion is observed. The CdTe luminescence in LaF3:Ce/CdTe nanocomposites is enhanced about 5 times, while in LaF3/CdTe nanocomposites no enhancement was observed. Energy transfer, light-re-absorption and surface passivation are likely the reasons for the luminescence enhancement.

Yao, Mingzhen; Zhang, Xing; Ma, Lun; Chen, Wei; Joly, Alan G.; Huang, Jinsong; Wang, Qingwu

2010-11-15T23:59:59.000Z

113

New chalcogenide glasses in the CdTe-AgI-As{sub 2}Te{sub 3} system  

SciTech Connect (OSTI)

Highlights: Black-Right-Pointing-Pointer Determination of the glass-forming region in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system. Black-Right-Pointing-Pointer Characterization of macroscopic properties of the new CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Characterization of the total conductivity of CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Comparison between the selenide and telluride equivalent systems. -- Abstract: Chalcogenide glasses in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system were synthesized and the glass-forming range was determined. The maximum content of CdTe in this glass system was found to be equal to 15 mol.%. The macroscopic characterizations of samples have consisted in Differential Scanning Calorimetry, density, and X-ray diffraction measurements. The cadmium telluride addition does not generate any significant change in the glass transition temperature but the resistance of binary AgI-As{sub 2}Te{sub 3} glasses towards crystallisation is estimated to be decreasing on the base of {Delta}T = T{sub x} - T{sub g} parameter. The total electrical conductivity {sigma} was measured by complex impedance spectroscopy. First, the CdTe additions in the (AgI){sub 0.5}(As{sub 2}Te{sub 3}){sub 0.5} host glass, (CdTe){sub x}(AgI){sub 0.5-x/2}(As{sub 2}Te{sub 3}){sub 0.5-x/2} lead to a conductivity decrease at x {<=} 0.05. Then, the behaviour is reversed at 0.05 {<=} x {<=} 0.15. The obtained results are discussed by comparison with the equivalent selenide system.

Kassem, M. [Univ. Picardie Jules Verne, F-80000 Amiens (France)] [Univ. Picardie Jules Verne, F-80000 Amiens (France); Le Coq, D., E-mail: david.lecoq@univ-littoral.fr [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France); Boidin, R.; Bychkov, E. [Univ. Lille Nord de France, F-59000 Lille (France) [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France)

2012-02-15T23:59:59.000Z

114

Relations between structural parameters and physical properties in CdTe and Cd0.96Zn0.04Te alloys  

E-Print Network [OSTI]

481 Relations between structural parameters and physical properties in CdTe and Cd0.96Zn0.04Te cristaux de CdTe et de Cd0,96Zn0,04Te, de densité de dislocations variant entre 5 x 104 et 6 x 105 cm-2. La and photoluminescence experiments were performed on several CdTe and Cd0.96Zn0.04Te crystals with dislocation density

Paris-Sud XI, Université de

115

www.ave.kth.se Rail Vehicles  

E-Print Network [OSTI]

www.ave.kth.se Rail Vehicles Part of the Masters program in Vehicle Engineering Master's Thesis: Validation of wheel wear calculation code Background Rail vehicle operators have a genuine concern about wheel and rail wear prediction methodologies, due to the influence of worn profiles in the cost of both

Haviland, David

116

Anisotropy in CdSe quantum rods  

SciTech Connect (OSTI)

The size-dependent optical and electronic properties of semiconductor nanocrystals have drawn much attention in the past decade, and have been very well understood for spherical ones. The advent of the synthetic methods to make rod-like CdSe nanocrystals with wurtzite structure has offered us a new opportunity to study their properties as functions of their shape. This dissertation includes three main parts: synthesis of CdSe nanorods with tightly controlled widths and lengths, their optical and dielectric properties, and their large-scale assembly, all of which are either directly or indirectly caused by the uniaxial crystallographic structure of wurtzite CdSe. The hexagonal wurtzite structure is believed to be the primary reason for the growth of CdSe nanorods. It represents itself in the kinetic stabilization of the rod-like particles over the spherical ones in the presence of phosphonic acids. By varying the composition of the surfactant mixture used for synthesis we have achieved tight control of the widths and lengths of the nanorods. The synthesis of monodisperse CdSe nanorods enables us to systematically study their size-dependent properties. For example, room temperature single particle fluorescence spectroscopy has shown that nanorods emit linearly polarized photoluminescence. Theoretical calculations have shown that it is due to the crossing between the two highest occupied electronic levels with increasing aspect ratio. We also measured the permanent electric dipole moment of the nanorods with transient electric birefringence technique. Experimental results on nanorods with different sizes show that the dipole moment is linear to the particle volume, indicating that it originates from the non-centrosymmetric hexagonal lattice. The elongation of the nanocrystals also results in the anisotropic inter-particle interaction. One of the consequences is the formation of liquid crystalline phases when the nanorods are dispersed in solvent to a high enough concentration. The preparation of the stable liquid crystalline solution of CdSe nanorods is described, as well as the large-scale alignment of the nanorods by taking advantage of the long-range orientational correlation in the liquid crystals. In addition, we investigated the phase diagram of the nanorod solution, as a step toward understanding the possible role of the long-range attractive interaction between the nanorods in the formation of lyotropic liquid crystals.

Li, Liang-shi

2003-09-01T23:59:59.000Z

117

Characterization of CdZnTe ambient temperature detectors  

SciTech Connect (OSTI)

A great deal of interest has been generated in the use of cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) detectors for ambient temperature detection of radionuclides. The addition of zinc to CdTe provides several benefits that enhance the materials operational characteristics at ambient temperature. Recent movement in the industry is to produce larger volume detectors using CdZnTe without much known about the effects of larger geometry on performance. The purpose of this study is to get an idea of the relationship of detector performance to both area and thickness variations.

Lavietes, A.

1994-09-01T23:59:59.000Z

118

High Performance Zintl Phase TE Materials with Embedded Particles...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

TE Materials with Embedded Particles Presents results from embedding nanoparticles in magnesium silicide alloy matrix reducing thermal conductivity by phonon scattering and...

119

A Search for Neutrinoless Double Beta Decay of Te-130.  

E-Print Network [OSTI]

??This dissertation describes an experimental search for neutrinoless double beta (0???) decay of 130Te. An observation of 0??? decay would establish that neutrinos are Majorana… (more)

Bryant, Adam Douglas

2010-01-01T23:59:59.000Z

120

Effect of Manganese Concentration in the Cd1-xMnxTe/CdTe Tandem Structure on Photovoltaic Energy Conversion  

Science Journals Connector (OSTI)

Abstract The photovoltaic electricity is obtained by direct conversion of sunlight into electricity by solar cells. The objective of this work is the study and simulation of a Tandem photovoltaic structure based on Cd1-xMnxTe as top material cell. This paper describes the optimization of energy efficiency for Cd1-xMnxTe thin films deposited by epitaxy on CdTe substrat. We present the impact of the manganese concentration in Cd1-xMnxTe thin films on solar cells performances. Our study includes simulation results to show the conversion efficiency and main performances factors as function of the manganese concentration.

A. Aissat; M. El Bey; M. Fathi; J.P. Vilcot

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

CdSe Nanorods Dominate Photocurrent of Hybrid CdSe?P3HT Photovoltaic Cell  

Science Journals Connector (OSTI)

CdSe Nanorods Dominate Photocurrent of Hybrid CdSe?P3HT Photovoltaic Cell ... A portion of the work was performed in the Univeristy Of California, Santa Barbara, Nanofabrication Facility, a part of the National Science Foundation funded National Nanofabrication Infrastructure Network (NNIN). ... The UV-visible light absorption and emission behavior of MEH-PPV/CdS hybrids was investigated and their potential to be used as photovoltaic cells was demonstrated. ...

Martin Schierhorn; Shannon W. Boettcher; Jeffrey H. Peet; Elison Matioli; Guillermo C. Bazan; Galen D. Stucky; Martin Moskovits

2010-09-28T23:59:59.000Z

122

Atomistic simulation of CdTe solid-liquid coexistence equilibria...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

simulation of CdTe solid-liquid coexistence equilibria. Atomistic simulation of CdTe solid-liquid coexistence equilibria. Abstract: Atomistic simulations of CdTe using a...

123

Strain relaxation of CdTe films growing on lattice-mismatched substrates  

E-Print Network [OSTI]

gap approaches the value of bulk CdTe crystals. This makesbulk crystals with crystalline CdTe ?lms for the purpose ofthe top layer of thick CdTe ?lms grown on Si(001) substrate

Ma, Zhixun; Yu, Kin Man; Walukiewicz, Wladek; Yu, Peter Y.; Mao, Samuel S.

2009-01-01T23:59:59.000Z

124

E-Print Network 3.0 - amorphous ge-sb-te films Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

times in GeSbTe films irradiated... commercial phase-change optical recording systems, such as those based on GeSbTe Ref. 3 or AglnSbTe,4 use... the crystalline and...

125

Magnetism of HgSe:Fe  

Science Journals Connector (OSTI)

The perpendicular and parallel components of the magnetization of the mixed valence system Hg1-xFexSe in the strongly dilute limit (xmagnetic fields up to 20 T. In this interesting semimagnetic semiconductor the overall magnetization is caused simultaneously by Fe3+ (Brillouin paramagnet), Fe2+ (van Vleck paramagnet), and free electrons (diamagnetic de Haas-van Alphen effect). Using a torque magnetometer the various contributions with their anisotropy are individually determined. For very low iron content (xmagnetic moment perpendicular to the magnetic field when applying the field in a nonsymmetric direction of the crystal. Using recent theoretical results on the energy-level diagram of Fe2+ in the Td symmetry of a HgSe host lattice we deduce a spin-orbit level splitting of 2 meV from our experimental data. In contrast to higher concentration samples, both the Brillouin paramagnetism of Fe3+ and the van Vleck paramagnetism of Fe2+ can be attributed to the sum from individual Fe donors with no obvious magnetic interaction between them. Finally, we also have measured de Haas-van Alphen oscillations of the conduction-band electrons with amplitudes of the same order as the paramagnetic background. From the measured crystal-field-induced anisotropy in the magnetic moment we deduce a Fermi-surface anisotropy of about 7%.

U. Zeitler; A. Wittlin; J. C. Maan; W. Dobrowolski; A. Mycielski

1996-12-01T23:59:59.000Z

126

Interfacial Reaction Between Nb Foil and n-Type PbTe Thermoelectric Materials During Thermoelectric Contact Fabrication  

Science Journals Connector (OSTI)

PbTe is a high-conversion-efficiency thermoelectric (TE) material that is commonly used in space exploration applications. Integration of PbTe in TE devices has a significant impact on the conversion efficienc...

Haiyang Xia; Cheng-Lung Chen; Fivos Drymiotis; Aiping Wu…

2014-11-01T23:59:59.000Z

127

CdS/CdTe Solar Cells Containing Directly-Deposited CdSxTe1-x Alloy Layers  

SciTech Connect (OSTI)

A CdS{sub x}Te{sub 1-x} layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdS{sub x}Te{sub 1-x} layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdS{sub x}Te{sub 1-x} region. Further understanding, however, is essential to predict the role of this CdS{sub x}Te{sub 1-x} layer in the operation of CdS/CdTe devices. In this study, CdS{sub x}Te{sub 1-x} alloy films were deposited by radio-frequency (RF) magnetron sputtering and co-evaporation from CdTe and CdS sources. Both RF-magnetron-sputtered and co-evaporated CdS{sub x}Te{sub 1-x} films of lower S content (x<;0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl{sub 2} heat treatment (HT) at {approx}400 C for 5 min. Films sputtered in a 1% O{sub 2}/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl{sub 2} HT. Films sputtered in O{sub 2} partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films. Initial PV device results show that the introduction of a directly-deposited CdS{sub x}Te{sub 1-x} alloy layer into the device structure produces devices of comparable performance to those without the alloy layer when a CdCl{sub 2} HT is performed. Further investigation is required to determine whether the CdCl{sub 2} heat treatment step can be altered or eliminated through direct deposition of the alloy layer.

Duenow, J. N.; Dhere, R. G.; Moutinho, H. R.; To, B.; Pankow, J. W.; Kuciauskas, D.; Gessert, T. A.

2011-01-01T23:59:59.000Z

128

The Periodic Table of Elements C  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Atomic Number Chemical Symbol Atomic Weight Chemical Name = Solid at room temperature = Liquid at room temperature = Gas at room temperature = Radioactive = Artificially Made KEY METALS NON-METALS 12.011 http://education.jlab.org/ Last revised on April 3, 2013 [294] H Li Na K Be Mg Ca Sc Ti Rb Cs Fr Sr Y Ba Ra Zr Hf Rf V Nb Ta Db Cr Mo W Sg Mn Tc Re Bh Fe Ru Os Hs Co Rh Ir Mt Ni Pd Pt Ds Cu Ag Au Rg Zn Cd Hg Cn Ga In Tl Uut Ge Sn Pb Fl As Sb Bi Uup Se Te Po Lv Br I At Uus Kr Xe Rn Uuo La Ac Ce Th Pr Pa Nd U Pm Np Sm Pu Eu Am Gd Cm Tb Bk Dy Cf Ho Es Er Fm Tm Md Yb Yb No Lu Lr B Al C Si N P O S F Cl Ne He Ar HYDROGEN LITHIUM SODIUM POTASSIUM BERYLLIUM MAGNESIUM CALCIUM SCANDIUM TITANIUM RUBIDIUM CESIUM FRANCIUM STRONTIUM YTTRIUM BARIUM RADIUM ZIRCONIUM HAFNIUM RUTHERFORDIUM VANADIUM NIOBIUM TANTALUM DUBNIUM CHROMIUM MOLYBDENUM TUNGSTEN SEABORGIUM MANGANESE TECHNETIUM RHENIUM BOHRIUM IRON RUTHENIUM OSMIUM HASSIUM

129

The Periodic Table of Elements C  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

.011 .011 Atomic Number Chemical Symbol Atomic Weight Chemical Name = Solid at room temperature = Liquid at room temperature = Gas at room temperature = Radioactive = Artificially Made KEY METALS NON-METALS http://education.jlab.org/ Last revised on April 3, 2013 [294] H Li Na K Be Mg Ca Sc Ti Rb Cs Fr Sr Y Ba Ra Zr Hf Rf V Nb Ta Db Cr Mo W Sg Mn Tc Re Bh Fe Ru Os Hs Co Rh Ir Mt Ni Pd Pt Ds Cu Ag Au Rg Zn Cd Hg Cn Ga In Tl Uut Ge Sn Pb Fl As Sb Bi Uup Se Te Po Lv Br I At Uus Kr Xe Rn Uuo La Ac Ce Th Pr Pa Nd U Pm Np Sm Pu Eu Am Gd Cm Tb Bk Dy Cf Ho Es Er Fm Tm Md Yb Yb No Lu Lr B Al C Si N P O S F Cl Ne He Ar HYDROGEN LITHIUM SODIUM POTASSIUM BERYLLIUM MAGNESIUM CALCIUM SCANDIUM TITANIUM RUBIDIUM CESIUM FRANCIUM STRONTIUM YTTRIUM BARIUM RADIUM ZIRCONIUM HAFNIUM RUTHERFORDIUM VANADIUM NIOBIUM TANTALUM DUBNIUM CHROMIUM MOLYBDENUM TUNGSTEN SEABORGIUM MANGANESE TECHNETIUM RHENIUM BOHRIUM IRON RUTHENIUM OSMIUM HASSIUM COBALT

130

TE Link Dormant Mode Used in GMPLS Optical Transport Networks for Energy Saving  

Science Journals Connector (OSTI)

This paper evaluates power efficiency of TE link dormant mode in optical transport network, considering daily traffic variability and GMPLS protocol. The proposed TE link dormant mode...

Li, Xin; Huang, Shanguo; Guo, Bingli; Zhang, Jie; Gu, Wanyi

131

Summit Manufacturing: Noncompliance Determination (2010-SE-0303)  

Broader source: Energy.gov (indexed) [DOE]

the the Matter of: Summit Manufacturing, Inc. Case Number 2010-SE-0303 NOTICE OF NONCOMPLIANCE DETERMINATION CERTIFICATION Manufacturers of certain covered products are required to certify compliance with the applicable energy conservation standards through submission of a compliance statement and a certification report. 10 CFR § 430.62. See 42 U.S.C. 6296 . The compliance statement is a legal statement by the manufacturer that the information provided in its certification reports is true , accurate and complete, that the basic models certified meet the applicable energy conservation standard, that the energy efficiency information report is the result of testing performed in conformance with the applicable test requirements in 10 CFR part 430, subpart B; and that the manufacturer is

132

2011-SE-1418 Sears_NND  

Broader source: Energy.gov (indexed) [DOE]

Sears, Roebuck & Co. Sears, Roebuck & Co. (freezers) Issued: June 26, 2012 BEFORE THE U.S. DEPARTMENT OF ENERGY Washington, D.C. 20585 ) ) ) ) ) Case Number: 2011-SE-1418 NOTICE OF NONCOMPLIANCE DETERMINATION Manufacturers and private labelers are prohibited from distributing covered products that do not comply with applicable federal energy conservation standards. 10 C.F.R. § 429.102; 42 U.S.C. § 6302. On September 22, 2011, DOE completed testing of one compact chest freezer, Kenmore-brand model number 255.19702010 ("19702"), privately labeled and distributed in commerce in the U.S. by Sears, Roebuck & Co. ("Sears") and manufactured in China. In December 2011 and January 2012, DOE completed testing oftln·ee additional units of 19702. DOE's testing was

133

Resource Letter SE?2: Solar Energy  

Science Journals Connector (OSTI)

This resource letter provides a source of information about the main types of solar energy and their uses updating Resource Letter SE?1 issued seven years ago. It is intended for the use of high school and college teachers both in developing courses and in guiding students to the literature of solar energy applications. Articles marked with an asterisk have been selected for publication in an accompanying reprint book. The letter E after the reference number denotes a relatively elementary item useful for high school and introductory college use and the educated public; the letter I denotes intermediate level references sophomore to senior level; and the letter A denotes advanced material principally for senior and graduate?level courses.

Laurent Hodges

1982-01-01T23:59:59.000Z

134

Laser irradiation effects on the CdTe/ZnTe quantum dot structure studied by Raman and AFM spectroscopy  

SciTech Connect (OSTI)

Micro-Raman spectroscopy has been applied to investigate the impact of laser irradiation on semiconducting CdTe/ZnTe quantum dots (QDs) structures. A reference sample (without dots) was also studied for comparison. Both samples were grown by molecular beam epitaxy technique on the p-type GaAs substrate. The Raman spectra have been recorded for different time of a laser exposure and for various laser powers. The spectra for both samples exhibit peak related to the localized longitudinal (LO) ZnTe phonon of a wavenumber equal to 210 cm{sup -1}. For the QD sample, a broad band corresponding to the LO CdTe phonon related to the QD-layer appears at a wavenumber of 160 cm{sup -1}. With increasing time of a laser beam exposure and laser power, the spectra get dominated by tellurium-related peaks appearing at wavenumbers around 120 cm{sup -1} and 140 cm{sup -1}. Simultaneously, the ZnTe surface undergoes rising damage, with the formation of Te aggregates at the pinhole edge as reveal atomic force microscopy observations. Local temperature of irradiated region has been estimated from the anti-Stokes/Stokes ratio of the Te modes intensity and it was found to be close or exceeding ZnTe melting point. Thus, the laser damage can be explained by the ablation process.

Zielony, E.; Placzek-Popko, E.; Henrykowski, A.; Gumienny, Z.; Kamyczek, P.; Jacak, J. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Nowakowski, P.; Karczewski, G. [Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw (Poland)

2012-09-15T23:59:59.000Z

135

Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films  

DOE Patents [OSTI]

A method of is disclosed improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurium-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact. 11 figs.

Gessert, T.A.

1999-06-01T23:59:59.000Z

136

Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films  

DOE Patents [OSTI]

A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

Gessert, Timothy A. (Conifer, CO)

1999-01-01T23:59:59.000Z

137

Temperature dependent band offsets in PbSe/PbEuSe quantum well heterostructures  

SciTech Connect (OSTI)

The band offsets of PbSe/Pb{sub 1-x}Eu{sub x}Se multi-quantum wells grown by molecular beam epitaxy are determined as a function of temperature and europium content using temperature-modulated differential transmission spectroscopy. The confined quantum well states in the valence and conduction bands are analyzed using a k{center_dot}p model with envelope function approximation. From the fit of the experimental data, the normalized conduction band offset is determined as 0.45{+-}0.15 of the band gap difference, independently of Eu content up to 14% and temperature from 20 to 300 K.

Simma, M.; Bauer, G.; Springholz, G. [Institut fuer Halbleiter und Festkoerperphysik, Johannes Kepler Universitaet, A-4040 Linz (Austria)

2012-10-22T23:59:59.000Z

138

Real-time observation of nanoscale topological transitions in epitaxial PbTe/CdTe heterostructures  

SciTech Connect (OSTI)

The almost completely immiscible PbTe/CdTe heterostructure has recently become a prototype system for self-organized quantum dot formation based on solid-state phase separation. Here, we study by real-time transmission electron microscopy the topological transformations of two-dimensional PbTe-epilayers into, first, a quasi-one-dimensional percolation network and subsequently into zero-dimensional quantum dots. Finally, the dot size distribution coarsens by Ostwald ripening. The whole transformation sequence occurs during all stages in the fully coherent solid state by bulk diffusion. A model based on the numerical solution of the Cahn-Hilliard equation reproduces all relevant morphological and dynamic aspects of the experiments, demonstrating that this standard continuum approach applies to coherent solids down to nanometer dimensions. As the Cahn-Hilliard equation does not depend on atomistic details, the observed morphological transformations are general features of the model. To confirm the topological nature of the observed shape transitions, we developed a parameter-free geometric model. This, together with the Cahn-Hilliard approach, is in qualitative agreement with the experiments.

Groiss, H., E-mail: heiko.groiss@jku.at, E-mail: istvan.daruka@jku.at; Daruka, I., E-mail: heiko.groiss@jku.at, E-mail: istvan.daruka@jku.at; Springholz, G.; Schäffler, F. [Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz 4040 (Austria); Koike, K.; Yano, M. [Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535-8585 (Japan); Hesser, G. [Center for Surface- and Nanoanalytics (ZONA), Johannes Kepler University, Linz 4040 (Austria); Zakharov, N.; Werner, P. [Max Planck Institute of Microstructure Physics, Halle 06120 (Germany)

2014-01-01T23:59:59.000Z

139

Photoinduced aging and viscosity evolution in Se-rich Ge-Se glasses  

SciTech Connect (OSTI)

We propose here to investigate the non-equilibrium viscosity of Ge-Se glasses under and after light irradiation. Ge{sub 10}Se{sub 90} and Ge{sub 20}Se{sub 80} fibers have been aged in the dark and under ambient light, over months. During aging, both the relaxation of enthalpy and the viscosity have been investigated. The viscosity was measured by shear relaxation-recovery tests allowing the measurement of non-equilibrium viscosity. When Ge{sub 10}Se{sub 90} glass fibers are aged under irradiation, a relatively fast fictive temperature decrease is observed. Concomitantly, during aging under irradiation, the non-equilibrium viscosity increases and reaches an equilibrium after two months of aging. This viscosity increase is also observed in Ge{sub 20}Se{sub 80} fibers. Nevertheless, this equilibrium viscosity is far below the viscosity expected at the configurational equilibrium. As soon as the irradiation ceases, the viscosity increases almost instantaneously by about one order of magnitude. Then, if the fibers are kept in the dark, their viscosity slowly increases over months. The analysis of the shear relaxation functions shows that the aging is thermorheologically simple. On the other side, there is no simple relaxation between the shear relaxation functions measured under irradiation and those measured in the dark. These results clearly suggest that a very specific photoinduced aging process occurs under irradiation. This aging is due to photorelaxation. Nevertheless, the viscosity changes are not solely correlated to photoaging and photorelaxation. A scenario is proposed to explain all the observed viscosity evolutions under and after irradiation, on the basis of photoinduced transient defects.

Gueguen, Yann; Sangleboeuf, Jean-Christophe; Rouxel, Tanguy [LARMAUR ERL CNRS 6274, Université de Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex (France)] [LARMAUR ERL CNRS 6274, Université de Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex (France); King, Ellyn A.; Lucas, Pierre [Department of Materials Science and Engineering, University of Arizona, 4715 E. Fort Lowell Road, Tucson, Arizona 85712 (United States)] [Department of Materials Science and Engineering, University of Arizona, 4715 E. Fort Lowell Road, Tucson, Arizona 85712 (United States); Keryvin, Vincent [LIMATB EA 4250, Université de Bretagne Sud, Rue de Saint Maudé, 56321 Lorient Cedex (France)] [LIMATB EA 4250, Université de Bretagne Sud, Rue de Saint Maudé, 56321 Lorient Cedex (France); Bureau, Bruno [Equipe Verres et Céramiques, UMR-CNRS 6226 Sciences Chimiques de Rennes, Université de Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex (France)] [Equipe Verres et Céramiques, UMR-CNRS 6226 Sciences Chimiques de Rennes, Université de Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex (France)

2013-08-21T23:59:59.000Z

140

Process Development for High Voc CdTe Solar Cells  

SciTech Connect (OSTI)

This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

Ferekides, C. S.; Morel, D. L.

2011-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te  

E-Print Network [OSTI]

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te alloys: Density functional functional simulations, Ge/Sb/Te alloys. Corresponding author: e-mail r.jones@fz-juelich.de, Phone: +49 discussed the alloy As30Ge10Si12Te48, and Te-based alloys have been well represented ever since. Alloys

142

Paul Sellin, Radiation Imaging Group The role of defects on CdTe detector performance  

E-Print Network [OSTI]

Paul Sellin, Radiation Imaging Group The role of defects on CdTe detector performance P.J. Sellin1-destructive material characterisation techniques have been applied to CdTe wafers grown by the Travelling Heater Method Imaging Group PL mapping of whole CdTe wafers PL ( =819 nm) scan for two CdTe wafers, (left: wafer L700

Sellin, Paul

143

Self-Assembly of CdTe Tetrapods into Network Monolayers at the Air/Water  

E-Print Network [OSTI]

Self-Assembly of CdTe Tetrapods into Network Monolayers at the Air/Water Interface Matthew D present a versatile method for cadmium telluride (CdTe) tetrapod syn- thesis by utilizing multiple Te the tetrapod shape. CdTe tetra- pods are a promising inorganic semicon- ductor for photovoltaic cells due

Lin, Zhiqun

144

Thermoelectric figure of merit of Ag{sub 2}Se with Ag and Se excess  

SciTech Connect (OSTI)

In the temperature range of 100-300 K, the electric ({sigma}) and thermoelectric ({alpha}{sub 0}) properties of Ag{sub 2}Se with an excess of Ag as high as {approx}0.1 at. % and Se as high as {approx}1.0 at. %, respectively, are investigated. From the data on {sigma}, {alpha}{sub 0}, and {chi}{sub tot} (thermal conductivities), the thermoelectric power {alpha}{sub 0}{sup 2}{sigma} and the figure of merit Z are calculated. It is found that {alpha}{sub 0}{sup 2}{sigma} and Z attain the peak values at room temperature and the electron concentration n {approx} 6.5 x 10{sup 18} cm{sup -3}.

Aliev, F. F., E-mail: farzali@physics.ab.az; Jafarov, M. B.; Eminova, V. I. [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan)

2009-08-15T23:59:59.000Z

145

Energy measurement of muons above 1 TeV  

Science Journals Connector (OSTI)

Pair production and bremsstrahlung cross-sections have sufficient magnitude and energy-dependence for muons above 1 TeV to suggest the use of these cross-sections for measurement of muon energies. A series of Mon...

M. K. Moe

1970-03-11T23:59:59.000Z

146

Selective Area Epitaxy of CdTe on Nanopatterned Substrates.  

E-Print Network [OSTI]

?? HgCdTe/Si devices can potentially be significantly improved by the use of nanopatterned substrate structures on Si to control point and extended crystal defects. This… (more)

Fahey, Stephen

2013-01-01T23:59:59.000Z

147

Selective Area Epitaxy of CdTe on Nanopatterned Substrates.  

E-Print Network [OSTI]

??HgCdTe/Si devices can potentially be significantly improved by the use of nanopatterned substrate structures on Si to control point and extended crystal defects. This thesis… (more)

Fahey, Stephen D.

2012-01-01T23:59:59.000Z

148

A Search for Neutrinoless Double Beta Decay of Te-130  

E-Print Network [OSTI]

Bolometric experiments for neutrinoless double beta 3.2.1A Search for Neutrinoless Double Beta Decay of Te by AdamSpring 2010 A Search for Neutrinoless Double Beta Decay of

Bryant, Adam Douglas

2010-01-01T23:59:59.000Z

149

INTERACTION OF DEFECTS IN CdTe-CRYSTALS HEAVILY DOPED WITH CHLORINE  

E-Print Network [OSTI]

ClTe) and (VCd 2 ClTe)] form, but larger clusters as well. Thus, the compensation process in Cl doped CdTe, PAGE In order to clarify the mechanism of compensation in semi-insulating crystals of CdTe doped.1051/rphysap:01977001202023500 #12;236 FIG. 1. - Photoluminescence spectra of In and Cl doped CdTe. ND = 10 17

Paris-Sud XI, Université de

150

REVUE DE PHYSIQUE APPLIQUE PHASE DIAGRAM CALCULATION IN THE Te-Bi-Sb TERNARY SYSTEM  

E-Print Network [OSTI]

by the stoichio- metric compounds Bi2Te3-Sb2Te3 and SnTe-PbTe [16, 17] exhibit complete miscibility in both liquid 1976) Résumé. 2014 On calcule le diagramme de l'équilibre liquide-solide dans le système ternaire Te be achieved either by means of time- and labor-consuming measurements which permit plotting the equilibrium

Boyer, Edmond

151

Electrical characteristics of the CdTe-n-CdHgTe structure fabricated in a single molecular-beam epitaxy process  

SciTech Connect (OSTI)

An extraordinary shape of the capacitance-voltage characteristics of CdTe-CdHgTe structures has been detected; these characteristics include a specific 'hump' in the inversion region, the height of which increased severalfold under illumination. Additional measurements using an optical probe, measurements of current-voltage characteristics, and an analysis of the energy-band diagram of the structure showed the following. CdTe, in contrast to CdHgTe, is a p-type semiconductor with an acceptor concentration of 1 x 10{sup 16} cm{sup -3}; there is a hole inversion layer in CdHgTe at the boundary with CdTe, which causes the 'hump'; and the barrier height for holes at the CdTe-Cd{sub 0.43}Hg{sub 0.57}Te interface was determined as 0.13 eV.

Mashukov, Yu. P., E-mail: dr_mashukov@mail.ru; Mikhailov, N. N.; Vasilyev, V. V. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2010-09-15T23:59:59.000Z

152

Phonon self-energy and origin of anomalous neutron scattering spectra in SnTe and PbTe thermoelectrics  

SciTech Connect (OSTI)

The anharmonic lattice dynamics of rock-salt thermoelectric compounds SnTe and PbTe are investigated with inelastic neutron scattering (INS) and first-principles calculations. The experiments show that, surprisingly, although SnTe is closer to the ferroelectric instability, phonon spectra in PbTe exhibit a more anharmonic character. This behavior is reproduced in first-principles calculations of the temperature-dependent phonon self-energy. Our simulations reveal how the nesting of phonon dispersions induces prominent features in the self-energy, which account for the measured INS spectra and their temperature dependence. We establish that the phase-space for three-phonon scattering processes, rather than just the proximity to the lattice instability, is the mechanism determining the complex spectrum of the transverse-optical ferroelectric mode.

Li, Chen [ORNL] [ORNL; Ma, Jie [ORNL] [ORNL; May, Andrew F [ORNL] [ORNL; Cao, Huibo [ORNL] [ORNL; Christianson, Andrew D [ORNL] [ORNL; Ehlers, Georg [ORNL] [ORNL; Singh, David J [ORNL] [ORNL; Sales, Brian C [ORNL] [ORNL; Delaire, Olivier A [ORNL] [ORNL

2014-01-01T23:59:59.000Z

153

A 3 TeV on 3 TeV proton-proton dedicated collider for Fermilab  

SciTech Connect (OSTI)

The Fermilab Dedicated Collider proposed in May 1983 is a 2 TeV on 2 TeV p)bar p) collider. The expected luminosity is )approximately) 10/sup 31/ cm/sup (minus/2)sec/sup )minus/1) and the estimated cost is )approximately) $362M (FY-83 dollars). Since 1983 both the superconducting magnet and the particle detector technologies have advanced and the countenance of physics, hence the desired characteristics of new facilities have also altered somewhat. We want to show here that with the new magnet technology used for the SSC one can construct a 3 TeV on 3 TeV pp collider on the Fermilab site. This pp Dedicated Collider )PPDC) will have a luminosity of about 10/sub 33/cm/sup )minus/2)sec)sup)minus)1) and a cost only )approximately) 50)percent) more than that of the p)bar p) Dedicated Collider. 3 figs

Teng, L.C.

1988-03-30T23:59:59.000Z

154

Coulomb interaction of acceptors in Cd{sub 1?x}Mn{sub x}Te/CdTe quantum dot  

SciTech Connect (OSTI)

The investigation on the effect of confining potential like isotropic harmonic oscillator type potential on the binding and the Coulomb interaction energy of the double acceptors in the presence of magnetic field in a Cd{sub 1?x}Mn{sub x}Te/CdTe Spherical Quantum Dot has been made for the Mn ion composition x=0.3 and compared with the results obtained from the square well type potential using variational procedure in the effective mass approximation.

Kalpana, P.; Nithiananthi, P., E-mail: kjkumar-gri@rediffmail.com; Jayakumar, K., E-mail: kjkumar-gri@rediffmail.com [Department of Physics, Gandhigram Rural University, Gandhigram-624302, TamilNadu (India); Reuben, A. Merwyn Jasper D. [Department of Physics, School of Engineering, Saveetha University, Thandalam, Chennai- 600104, TamilNadu (India)

2014-04-24T23:59:59.000Z

155

Effects of Cu Diffusion from ZnTe:Cu/Ti Contacts on Carrier Lifetime of CdS/CdTe Thin Film Solar Cells: Preprint  

SciTech Connect (OSTI)

We study the performance of CdS/CdTe thin film PV devices processed with a ZnTe:Cu/Ti contact to investigate how carrier lifetime in the CdTe layer is affected by Cu diffusion from the contact.

Gessert, T. A.; Metzger, W. K.; Asher, S. E.; Young, M. R.; Johnston, S.; Dhere, R. G.; Duda, A.

2008-05-01T23:59:59.000Z

156

Spectral photoresponse of ZnSe/GaAs(001) heterostructures with CdSe ultra-thin quantum well insertions  

SciTech Connect (OSTI)

We present a study of the spectral photoresponse (SPR) of ZnSe/GaAs(001) heterostructures for different ZnSe film thickness with and without CdSe ultra-thin quantum well (UTQW) insertions. We observe a significant increase of the SPR of heterostructures containing 3 monolayer thick CdSe UTQW insertions; these results encourage their use in photodetectors and solar cells.

Valverde-Chávez, D. A.; Sutara, F.; Hernández-Calderón, I. [Physics Department, Cinvestav-IPN, Av. IPN 2508, 07360 México, DF (Mexico)

2014-05-15T23:59:59.000Z

157

Leader Electronics: Data Request (2010-SE-2301) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Data Request (2010-SE-2301) Data Request (2010-SE-2301) Leader Electronics: Data Request (2010-SE-2301) August 19, 2010 DOE requested test data from Leader Electronics Inc. for various models of external power supplies after Leader Electronics certified energy values that did not meet federal energy conservation standards. Leader Electronics was required to provide test data, including complete test reports, for external power supply models "NU50-2093400-I3(NU50-21090-300F)" and "MU03-F050040-AI(MU03-F1050-AKOS)." Leader Electronics: Data Request (2010-SE-2301) More Documents & Publications Leader Electronics: Noncompliance Determination (2010-SE-2301) Leader Electronics: Notice of Allowance (2010-SE-2301) Lutron Electronics: Noncompliance Determination (2012-SE-3796

158

A p ? n transition for Sn-doped Cu(In,Ga)Se{sub 2} bulk materials  

SciTech Connect (OSTI)

Cu(In,Ga)Se{sub 2} (CIGSe) pellets at different Sn contents were fabricated by reactive liquid-phase sintering at 600–700 °C with the help of sintering aids of Sb{sub 2}S{sub 3} and Te. Powder preparation was based upon the molecular formula of Cu{sub 0.9}[(In{sub 0.7?x}Sn{sub x}Ga{sub 0.3}){sub 0.9}Sb{sub 0.1}](S{sub 0.15}Te{sub 0.2}Se{sub 1.65}) or Sn-x-CIGSe. Morphology, structure, and electrical property of Sn-doped CIGSe bulks were investigated. The composition of Sn-doped CIGSe is purposely designed for studying the doping effect on the CIGSe performance. The unexpected increase in hole concentration of CIGSe due to the donor doping is rationalized. A controllable n-type semiconductor is deliberately achieved for Sn-0.15-CIGSe and important for making a p/n homojunction in CIGSe solar cells. - Graphical abstract: The controls in defect type and electrical properties of Cu(In,Ga)Se{sub 2} by doping Sn{sup 4+} on the In{sup 3+} site. Highlights: • n-type Sn-CIGSe with n{sub e} of 6.4×10{sup 16} cm{sup ?3} and ?{sub e} of 2.3 cm{sup 2}/V s was obtained. • This n-type Sn-CIGSe was obtained by material design and composition control. • The reported n-type CIGSe was obtained from the Zn/CIGSe and CdS/CIGSe bilayers. • Extrinsic donor doping was explored through the results of electrical properties. • A n/p homojunction with Sn-CIGSe and undoped one can be used for solar cell devices.

Monsefi, Mehrdad; Kuo, Dong-Hau, E-mail: dhkuo@mail.ntust.edu.tw

2013-08-15T23:59:59.000Z

159

Influence of EDTA{sup 2-} on the hydrothermal synthesis of CdTe nanocrystallites  

SciTech Connect (OSTI)

Transformation from Te nanorods to CdTe nanoparticles was achieved with the assistance of EDTA as a ligand under hydrothermal conditions. Experimental results showed that at the beginning of reaction Te nucleated and grew into nanorods. With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Finally, nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were obtained. The effects of EDTA on the morphology and formation of CdTe nanoparticles were discussed in consideration of the strong ligand-effect of EDTA, which greatly decreased the concentration of Cd{sup 2+}. Furthermore, the possible formation process of CdTe nanoparticles from Te nanorods was further proposed. The crystal structure and morphology of the products were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). - Graphical Abstract: Firstly, Te nucleated and grew into nanorods in the presence of EDTA{sup 2-}. Then CdTe nucleus began to emerge on Te nanorods and finally monodispersed CdTe nanoparticles were obtained. Highlights: Black-Right-Pointing-Pointer EDTA serves as a strong ligand with Cd{sup 2+}. Black-Right-Pointing-Pointer The existence of EDTA constrains the nucleation of CdTe and promotes the formation of Te nanorods. Black-Right-Pointing-Pointer With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Black-Right-Pointing-Pointer Nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were finally obtained.

Gong Haibo [Center of Bio and Micro/nano Functional Materials, State Key Lab of Crystal Materials, Shandong University, Jinan 250100 (China); School of Materials Science and Engineering, University of Jinan, Jinan 250022 (China); Hao Xiaopeng, E-mail: xphao@sdu.edu.cn [Center of Bio and Micro/nano Functional Materials, State Key Lab of Crystal Materials, Shandong University, Jinan 250100 (China); Wu Yongzhong [Center of Bio and Micro/nano Functional Materials, State Key Lab of Crystal Materials, Shandong University, Jinan 250100 (China); Cao Bingqiang; Xu Hongyan [School of Materials Science and Engineering, University of Jinan, Jinan 250022 (China); Xu Xiangang [Center of Bio and Micro/nano Functional Materials, State Key Lab of Crystal Materials, Shandong University, Jinan 250100 (China)

2011-12-15T23:59:59.000Z

160

Electrical Characterization of Cu Composition Effects in CdS/CdTe Thin-Film Solar Cells with a ZnTe:Cu Back Contact: Preprint  

SciTech Connect (OSTI)

We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at {approx}0.55 eV whose concentration is significant when the Cu concentration is high. The device performance, which initially increases with Cu concentration then decreases, reflects the interplay between the positive influences and negative influences (increasing deep levels in CdTe) of Cu.

Li, J. V.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Dhere, R. G.; Young, M. R.; Levi, D. H.

2012-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Effect of solvents on morphologies of PbTe nanostructures: Controllable synthesis of hollow and solid PbTe nanocubes by a solvothermal method  

SciTech Connect (OSTI)

We demonstrate a facile solvothermal route to grow hollow and solid PbTe nanocubes. The hollow PbTe nanocubes were successfully achieved when EtOH was used as solvent in the presence of nonionic polymer PEG, while the solid PbTe nanocubes were obtained when EG was used as solvent in the presence of PEG, whilst keeping the other experimental conditions constant. The results indicate that the solvents used in reaction system play a key role to determine the interior structure of PbTe nanocubes. On the basis of the experimental results and analysis, a possible growth mechanism has been discussed in detail for the hollow and solid PbTe nanocubes. - Graphical abstract: A facile solution-phase route has been developed to synthesize hollow and solid PbTe nanocubes. The possible growth mechanism of hollow and solid PbTe nanocubes was discussed in detail. Highlights: Black-Right-Pointing-Pointer A facile controllable route was described for hollow and solid PbTe nanocubes. Black-Right-Pointing-Pointer The hollow PbTe nanocubes were achieved using EtOH as solvent. Black-Right-Pointing-Pointer The solid PbTe nanocubes were obtained using EG as solvent. Black-Right-Pointing-Pointer The solvent played a key role for the formation of hollow and solid PbTe nanocubes.

Wang Wenzhong, E-mail: wzhwang@aphy.iphy.ac.cn [School of Science, Minzu University of China, Beijing 100081 (China); Wang Lijuan [School of Science, Minzu University of China, Beijing 100081 (China); Zhou Qing [College of Science, Guizhou University, Guiyang 550025 (China)

2012-04-15T23:59:59.000Z

162

Simkar: Proposed Penalty (2012-SE-5408) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Simkar: Proposed Penalty (2012-SE-5408) Simkar: Proposed Penalty (2012-SE-5408) Simkar: Proposed Penalty (2012-SE-5408) November 21, 2012 DOE alleged in a Notice of Proposed Civil Penalty that Simkar Corporation manufactured and distributed noncompliant probe-start and pulse-start basic model metal halide lamp fixtures in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Simkar: Proposed Penalty (2012-SE-5408) More Documents & Publications Simkar: Noncompliance Determination (2012-SE-5408) Simkar: Order (2012-SE-5408)

163

Central Moloney: Proposed Penalty (2013-SE-4702) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Proposed Penalty (2013-SE-4702) Proposed Penalty (2013-SE-4702) Central Moloney: Proposed Penalty (2013-SE-4702) March 20, 2013 DOE alleged in a Notice of Proposed Civil Penalty that Central Moloney, Inc. manufactured and distributed a variety of noncompliant liquid-immersed distribution transformers in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Central Moloney: Proposed Penalty (2013-SE-4702) More Documents & Publications Central Moloney: Noncompliance Determination (2013-SE-4702) Central Moloney: Order (2013-SE-4702)

164

Hicon: Proposed Penalty (2013-SE-1426) | Department of Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Hicon: Proposed Penalty (2013-SE-1426) Hicon: Proposed Penalty (2013-SE-1426) Hicon: Proposed Penalty (2013-SE-1426) July 8, 2013 DOE alleged in a Notice of Proposed Civil Penalty that Ningbo Hicon International Industry Company, Ltd. manufactured and distributed noncompliant freezer basic model BD-200 in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Hicon: Proposed Penalty (2013-SE-1426) More Documents & Publications Hicon: Noncompliance Determination (2013-SE-1426) Hicon: Order (2013-SE-1426) Haier: Proposed Penalty

165

Philips: Proposed Penalty (2012-SE-2605) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Proposed Penalty (2012-SE-2605) Proposed Penalty (2012-SE-2605) Philips: Proposed Penalty (2012-SE-2605) November 29, 2012 DOE alleged in a Notice of Proposed Civil Penalty that Philips Lighting Electronics N. A. manufactured and distributed noncompliant fluorescent lamp ballast basic model VEL-1S40-SC in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Philips: Proposed Penalty (2012-SE-2605) More Documents & Publications Philips: Noncompliance Determination (2012-SE-2605) Philips: Order (2012-SE-2605)

166

CNA: Proposed Penalty (2013-SE-1430) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

CNA: Proposed Penalty (2013-SE-1430) CNA: Proposed Penalty (2013-SE-1430) CNA: Proposed Penalty (2013-SE-1430) September 24, 2013 DOE alleged in a Notice of Proposed Civil Penalty that CNA International, Inc., d/b/a MC Appliance Corp. privately labeled and distributed noncompliant freezer Magic Chef model number HMCF7W in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. CNA: Proposed Penalty (2013-SE-1430) More Documents & Publications CNA: Noncompliance Determination (2013-SE-1430) CNA: Compromise Agreement (2013-SE-1430)

167

Hadron supercolliders: The 1-TeV scale and beyond  

SciTech Connect (OSTI)

Greater understanding of the connection between the weak and electromagnetic interactions is central to progress in elementary-particle physics. A definitive exploration of the mechanism for electroweak symmetry breaking will require collisions between fundamental constituents at energies on the order of 1 TeV. This goal drives the design of high-energy, high-luminosity hadron colliders that will be commissioned during the next decade, but by no means completely defines their scientific potential. These three lectures are devoted to a review of the standard-model issues that motivated an experimental assault on the 1-TeV scale, an introduction to the machines and the experimental environment they will present, and a survey of possibilities for measurement and discovery with a multi-TeV hadron collider. 72 refs., 29 figs.

Quigg, C.

1990-08-10T23:59:59.000Z

168

What causes high resistivity in CdTe  

SciTech Connect (OSTI)

Shallow donors are often introduced into semiconductor materials to enhance n-type conductivity. However, they can sometimes also be used to obtain compensation between donors and acceptors, resulting in high resistivity in semiconductors. For example, CdTe can be made semi-insulating by shallow donor doping. This is routinely done to obtain high resistivity in CdTe-based radiation detectors. However, it is widely believed that the shallow donor alone cannot be responsible for the high resistivity in CdTe. This is based on the argument that it is practically impossible to control the shallow donor doping level so precisely that the free carrier density can be brought below the desired value suitable for radiation detection applications. Therefore, a deep native donor is usually assumed to exist in CdTe and pin the Fermi level near midgap. In this paper, we present our calculations on carrier statistics and energetics of shallow donors and native defects in CdTe and illustrate different donor-specific mechanisms for achieving carrier compensation. Our results show that the shallow donor can be used to reliably obtain high resistivity in CdTe without requiring additional deep donors. Since radiation detection applications require both high resistivity and good carrier transport, one should generally use shallow donors and shallow acceptors for carrier compensation and avoid deep centers that are effective carrier traps. This study highlights how the interaction between impurities and native defects intricately affects the Fermi level pinning in the semiconductor band gap and the associated resistivity of the material.

Biswas, Koushik [ORNL; Du, Mao-Hua [ORNL

2012-01-01T23:59:59.000Z

169

Optically induced magnetic polarons in EuTe  

SciTech Connect (OSTI)

Direct measurements of the photoinduced magnetization in EuTe, using a two color pump-and-probe technique, are presented. The photoinduced effect was pumped using photons of above-the-bandgap energy, and detected by the Faraday rotation of a probe beam of energy below-the-bandgap. The photoinduced Faraday rotation changes sign, as expected from our model for the optically induced magnetic polaron. The EuTe spin-flop transition at low fields is also detected as a sharp step in the photoinduced Faraday rotation, and its observation provides additional supports for the photoinduced polaron model.

Henriques, A. B.; Galgano, G. D. [Instituto de Física, Universidade de São Paulo, Caixa Postal 66318, 05315-970, São Paulo (Brazil); Abramof, E.; Rappl, P. H. O. [LAS - INPE, Av. Dos Astronautas, 1758, 12227-010, São José dos Campos (Brazil)

2013-12-04T23:59:59.000Z

170

Precision Calibration of the NuTeV Calorimeter  

E-Print Network [OSTI]

NuTeV is a neutrino-nucleon deep-inelastic scattering experiment at Fermilab. The detector consists of an iron-scintillator sampling calorimeter interspersed with drift chambers, followed by a muon toroidal spectrometer. We present determinations of response and resolution functions of the NuTeV calorimeter for electrons, hadrons, and muons over an energy range of 4.8 to 190 GeV. The absolute hadronic energy scale is determined to an accuracy of 0.43%. We compare our measurements to predictions from calorimeter theory and GEANT3 simulations.

The NuTeV Collaboration; D. A. Harris; J. Yu

1999-08-20T23:59:59.000Z

171

Relativistic calculations of electronic states of TeH  

Science Journals Connector (OSTI)

Relativistic configuration interaction calculations of five ?–? states [3/2 1/2 1/2(II) 3/2(II) 5/2] of TeH are carried out. Comparison calculations of the 2? and 4? ?–s states are also carried out with the objective of understanding the effect of spin–orbit interaction on the electronic states of TeH. These calculations enable assignment of some of the experimentally observed spectra. The 1/2(II) 3/2(II) and 5/2 states exhibit interesting avoided crossings.

K. Balasubramanian; Ming Han; M. Z. Liao

1987-01-01T23:59:59.000Z

172

PRECONTACT SURFACE CHEMISTRY EFFECTS ON CdWCdTe SOLAR CELL PERFORMANCE AND STABILITY  

E-Print Network [OSTI]

PRECONTACT SURFACE CHEMISTRY EFFECTS ON CdWCdTe SOLAR CELL PERFORMANCE AND STABILITY Dave Albin (CBD) and close spaced sublimation (CSS) respectively. CdTe growth is followed by either solution

Sites, James R.

173

Impurity and back contact effects on CdTe/CdS thin film solar cells.  

E-Print Network [OSTI]

??CdTe/CdS thin film solar cells are the most promising cost-effective solar cells. The goal of this project is to improve the performance for CdS/CdTe devices… (more)

Zhao, Hehong

2008-01-01T23:59:59.000Z

174

Resonant Level Enhancement of the Thermoelectric Power of Bi2Te3...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Power of Bi2Te3 with Tin Application to practical p-type thermoelectric tin alloys for heat pumps. heremans.pdf More Documents & Publications The tin impurity in Bi0.5Sb1.5Te3...

175

Pressure-induced Phase Transition in Thiol-capped CdTe Nanoparticles  

SciTech Connect (OSTI)

Phase transitions for CdTe nanoparticles (NPs) under high pressure up to 37.0 GPa have been studied using fluorescence measurements. The phase transition from cinnarbar to rocksalt phase has been observed in CdTe NPs solution at 5.8 GPa, which is much higher than the phase transition pressure of bulk CdTe (3.8 GPa) and that of CdTe NPs in solid form (0.8 GPa). CdTe NPs solution therefore shows elevated phase transition pressure and enhanced stability against pressure compared with bulk CdTe and CdTe NPs in solid forms. The enhanced stability of CdTe NPs solution has been attributed to possible shape change in the phase transition and/or inhomogeneous strains in nanoparticle solutions.

Wu, F; Zaug, J; Young, C; Zhang, J Z

2006-11-29T23:59:59.000Z

176

Ligand Mediated Surface Reconstruction of Photoluminescent CdTe Quantum Dots.  

E-Print Network [OSTI]

??Enhancement of photoluminescence (PL) is observed for light-shielded dodecylamine-capped colloidal CdTe quantum dots (CdTe/DDA QDs) dispersed in toluene after washing and recapping. The PL quantum… (more)

Onnink, A.J.

2013-01-01T23:59:59.000Z

177

Development of Materials and Structures for p-type Contacts in CdTe Solar Cells.  

E-Print Network [OSTI]

??Solar cells based on CdTe absorbers are attractive due to the optimal direct band gap energy and large absorption coefficient of CdTe, however, their performance… (more)

Ferizovic, Dino

2012-01-01T23:59:59.000Z

178

WAVELENGTH DEPENDENT EFFECTIVE TRAP DENSITY IN CdTe : EVIDENCE FOR THE PRESENCE OF TWO  

E-Print Network [OSTI]

1 WAVELENGTH DEPENDENT EFFECTIVE TRAP DENSITY IN CdTe : EVIDENCE FOR THE PRESENCE OF TWO.1016/S0030-4018(96)00516-0 #12;2 Photorefractive semiconductors like CdTe are characterized by a low

179

Change in the current-carrier concentration upon doping PbTe with gallium  

SciTech Connect (OSTI)

Upon doping PbTe with gallium, both high-resistivity samples with intrinsic conductivity and low-resistivity samples with electronic conductivity (n/sub e/ = 10/sup 18/ cm/sup -3/) are produced on the PbTe-GaTe section. A thorough investigation of the dependence of the thermo-emf of Pb/sub 1-x/Ga/sub x/Te on the excess Pb and Te side showed the presence of a wide region with intrinsic conductivity. The experimental data can be explained by the fact that impure gallium in PbTe has negative Hubbard energy and stabilizes the Fermi level almost at the center of the forbidden band. At high gallium concentrations, Ga/sub 2/Te/sub 3/ precipitates at first, and then GaTe precipitates as well. The lead forming in excess transforms Ga/sup 3 +/ to Ga/sup +/, which produces the electronic conductivity in the material.

Bushmarina, G.S.; Gruzinov, B.F.; Drabkin, I.A.; Lev, E.Ya.; Moizhes, B.Ya; Suprun, S.G.

1987-07-01T23:59:59.000Z

180

Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)  

SciTech Connect (OSTI)

Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

Gessert, T. A.

2010-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Spin Waves and magnetic exchange interactions in insulating Rb0.89Fe1.58Se2  

SciTech Connect (OSTI)

The parent compounds of iron pnictide superconductors are bad metals with a collinear antiferromagnetic structure and Neel temperatures below 220 K. Although alkaline iron selenide A{sub y}Fe{sub 1.6+x}Se{sub 2} (A = K, Rb, Cs) superconductors are isostructural with iron pnictides, in the vicinity of the undoped limit they are insulators, forming a block antiferromagnetic order and having Neel temperatures of roughly 500 K. Here we show that the spin waves of the insulating antiferromagnet Rb{sub 0.89}Fe{sub 1.58}Se{sub 2} can be accurately described by a local moment Heisenberg Hamiltonian. A fitting analysis of the spin wave spectra reveals that the next-nearest neighbour couplings in Rb{sub 0.89}Fe{sub 1.58}Se{sub 2}, (Ba,Ca,Sr)Fe{sub 2}As{sub 2}, and Fe{sub 1.05}Te are of similar magnitude. Our results suggest a common origin for the magnetism of all the Fe-based superconductors, despite having different ground states and antiferromagnetic orderings.

Wang, Miaoyin [ORNL; Fang, Chen [Purdue University; Yao, Dao-Xin [unknown; Tan, Guotai [ORNL; Harriger, Leland W [ORNL; Song, Yu [ORNL; Netherton, Tucker J [ORNL; Zhang, Chenglin [ORNL; Wang, Meng [ORNL; Stone, Matthew B [ORNL; Tian, Wei [Ames Laboratory and Iowa State University; Hu, Jiangping [Purdue University and Chinese Academy of Sciences; Dai, Pengcheng [University of Tennessee, Knoxville (UTK)

2011-01-01T23:59:59.000Z

182

1. INTRODUCTION CdTe/CdS solar cells are among the most promising  

E-Print Network [OSTI]

Te/CdS SOLAR CELLS A.Romeo, A.N. Tiwari, and H. Zogg Thin Films Physics Group, Institute of Quantum ElectronicsTe/CdS thin film solar cells. The merits of different TCOs and the properties of the CdTe/CdS solar cells1. INTRODUCTION CdTe/CdS solar cells are among the most promising devices for low cost and high

Romeo, Alessandro

183

Detector Performance of Ammonium-Sulfide-Passivated CdZnTe and CdMnTe Materials  

SciTech Connect (OSTI)

Dark currents, including those in the surface and bulk, are the leading source of electronic noise in X-ray and gamma detectors, and are responsible for degrading a detector's energy resolution. The detector material itself determines the bulk leakage current; however, the surface leakage current is controllable by depositing appropriate passivation layers. In previous research, we demonstrated the effectiveness of surface passivation in CZT (CdZnTe) and CMT (CdMnTe) materials using ammonium sulfide and ammonium fluoride. In this research, we measured the effect of such passivation on the surface states of these materials, and on the performances of detectors made from them.

Kim, K.H.; Bolotnikov, A.E.; Camarda, G.S.; Marchini, L.; Yang, G.; Hossain, A.; Cui, Y.; Xu, L.; and James, R.B.

2010-08-01T23:59:59.000Z

184

Neptun Light: Proposed Penalty (2012-SE-3504) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Neptun Light: Proposed Penalty (2012-SE-3504) Neptun Light: Proposed Penalty (2012-SE-3504) Neptun Light: Proposed Penalty (2012-SE-3504) May 2, 2013 DOE alleged in a Notice of Proposed Civil Penalty that Neptun Light, Inc. failed to certify a variety of medium base compact fluorescent lamps as compliant with the applicable energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Neptun Light: Proposed Penalty (2012-SE-3504) More Documents & Publications Neptun Light: Order (2012-SE-3504) Excellence Opto: Proposed Penalty (2013-CE-49002)

185

Teddico: Proposed Penalty (2012-SE-5409) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Proposed Penalty (2012-SE-5409) Proposed Penalty (2012-SE-5409) Teddico: Proposed Penalty (2012-SE-5409) November 21, 2012 DOE alleged in a Notice of Proposed Civil Penalty that The Electrical Design, Development and Implementation Company d/b/a Teddico manufactured and distributed noncompliant metal halide lamp fixtures with magnetic probe-start ballasts in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Teddico: Proposed Penalty (2012-SE-5409) More Documents & Publications Teddico: Noncompliance Determination (2012-SE-5409)

186

Mackle Company: Proposed Penalty (2010-SE-0106) | Department of Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mackle Company: Proposed Penalty (2010-SE-0106) Mackle Company: Proposed Penalty (2010-SE-0106) Mackle Company: Proposed Penalty (2010-SE-0106) June 14, 2010 DOE alleged in a Notice of Proposed Civil Penalty that The Mackle Company, Inc., sold and/or distributed noncompliant refrigerators, refrigerator-freezers, and freezers in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. The Mackle Company: Proposed Penalty (2010-SE-0106) More Documents & Publications Mackle Company: Proposed Penalty (2011-CE-2102) Mackle Company: Order (2010-SE-0106)

187

Goodman Manufacturing: Proposed Penalty (2011-SE-4301) | Department of  

Broader source: Energy.gov (indexed) [DOE]

Proposed Penalty (2011-SE-4301) Proposed Penalty (2011-SE-4301) Goodman Manufacturing: Proposed Penalty (2011-SE-4301) December 2, 2011 DOE alleged in a Notice of Proposed Civil Penalty that Goodman Manufacturing manufactured and distributed noncompliant basic model CPC180* commercial package air conditioners in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Goodman Manufacturing: Proposed Penalty (2011-SE-4301) More Documents & Publications Goodman Manufacturing: Noncompliance Determination (2011-SE-4301)

188

Pax Global: Noncompliance Determination (2013-SE-1413) | Department of  

Broader source: Energy.gov (indexed) [DOE]

Pax Global: Noncompliance Determination (2013-SE-1413) Pax Global: Noncompliance Determination (2013-SE-1413) Pax Global: Noncompliance Determination (2013-SE-1413) April 2, 2013 DOE issued a Notice of Noncompliance Determination to Pax Global, Inc. finding that freezer basic models (1) Crosley CCF51; (2) Crosley CCF69; (3) Crosley CCF106; and (4) Daewoo DCF-106W do not comport with the energy conservation standards. DOE determined the products were noncompliant based on DOE testing. Pax Global must immediately notify each person (or company) to whom Pax Global distributed the noncompliant products that the products do not meet Federal standards. Pax Global: Noncompliance Determination (2013-SE-1413) More Documents & Publications Pax Global: Compromise Agreement (2013-SE-1413) Daewoo: Proposed Penalty (2010-CE-0410)

189

Mackle Company: Proposed Penalty (2010-SE-0106) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Mackle Company: Proposed Penalty (2010-SE-0106) Mackle Company: Proposed Penalty (2010-SE-0106) Mackle Company: Proposed Penalty (2010-SE-0106) June 14, 2010 DOE alleged in a Notice of Proposed Civil Penalty that The Mackle Company, Inc., sold and/or distributed noncompliant refrigerators, refrigerator-freezers, and freezers in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. The Mackle Company: Proposed Penalty (2010-SE-0106) More Documents & Publications Mackle Company: Proposed Penalty (2011-CE-2102) Mackle Company: Order (2010-SE-0106)

190

Nanoscale Imaging of Photocurrent and Efficiency in CdTe Solar Cells  

Science Journals Connector (OSTI)

Nanoscale Imaging of Photocurrent and Efficiency in CdTe Solar Cells ... The local collection characteristics of grain interiors and grain boundaries in thin-film CdTe polycrystalline solar cells are investigated using scanning photocurrent microscopy. ... photovoltaics; CdTe; scanning photocurrent microscopy; solar cells; NSOM ...

Marina S. Leite; Maxim Abashin; Henri J. Lezec; Anthony Gianfrancesco; A. Alec Talin; Nikolai B. Zhitenev

2014-10-15T23:59:59.000Z

191

Carbon Sequestration in Terrestrial Ecosystems (CSiTE) PRINCIPAL INVESTIGATOR: Stan D. Wullschleger  

E-Print Network [OSTI]

Carbon Sequestration in Terrestrial Ecosystems (CSiTE) PRINCIPAL INVESTIGATOR: Stan D. Wullschleger://csite.eds.ornl.gov PROJECT DESCRIPTION The Carbon Sequestration in Terrestrial Ecosystems (CSiTE) project conducts research of switchgrass growing in the field. #12;Carbon Sequestration in Terrestrial Ecosystems (CSiTE) tion of inputs

192

NREL study may provide future guidance in improving CdS/CdTe photovoltaic device performance.  

E-Print Network [OSTI]

NREL study may provide future guidance in improving CdS/CdTe photovoltaic device performance. The majority of minority carrier lifetime (MCL) studies performed on CdS/CdTe photovoltaic (PV) devices have Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices." Proc. 37th IEEE Photovoltaic

193

Low temperature growth of ZnTe by synchroton radiation using metalorganic sources  

Science Journals Connector (OSTI)

The use of synchrotron radiation to convert diethylzinc and diethyltelluride molecules into ZnTe has been employed for ZnTe growth. The formation of ZnTe epitaxial layer on (100) oriented GaAs substrate at room temperature is experimentally demonstrated. It is shown by x?ray photoelectron spectroscopy that no carbon is included in the film. ?

Makoto Ikejiri; Toshihiro Ogata; Hiroshi Ogawa; Mitsuhiro Nishio; Akira Yoshida

1994-01-01T23:59:59.000Z

194

Solar Energy Materials & Solar Cells 91 (2007) 13881391 Bifacial configurations for CdTe solar cells  

E-Print Network [OSTI]

Solar Energy Materials & Solar Cells 91 (2007) 1388­1391 Bifacial configurations for CdTe solar We present a different back contact for CdTe solar cell by the application of only a transparent that acts as a free-Cu stable back contact and at the same time allows to realize bifacial CdTe solar cells

Romeo, Alessandro

195

PHOTOSCANNING OF CdTe DETECTORS FOR INVESTIGATION OF CRYSTAL QUALITY  

E-Print Network [OSTI]

349 PHOTOSCANNING OF CdTe DETECTORS FOR INVESTIGATION OF CRYSTAL QUALITY AND CONTACT BEHAVIOUR P. A. Preliminary results are reported on light scanning of CdTe detectors with a mechanical scanning system using is absorbed in CdTe with an absorption length of appro- ximately 10 gm. The two mirrors were driven

Paris-Sud XI, Université de

196

Optical implementation of entangled multi-spin states in a CdTe quantum well  

E-Print Network [OSTI]

Optical implementation of entangled multi-spin states in a CdTe quantum well J.M. Baoa , A in a CdTe quantum well. Our method, relying on the exchange interaction between optically excited holes; 78.67.De; 42.50.Md Keywords: A. CdTe quantum wells; D. Ultrafast optics; D. Quantum computation; D

Bao, Jiming

197

Structural tuning of color chromaticity through nonradiative energy transfer by interspacing CdTe nanocrystal monolayers  

E-Print Network [OSTI]

Structural tuning of color chromaticity through nonradiative energy transfer by interspacing CdTe transfer in the heterostructure of layer-by-layer spaced CdTe nanocrystal NC solids. We achieved highly demonstrated efficient FRET in LbL assembled bilayers of CdTe NCs. In another structure, alternating layers

Demir, Hilmi Volkan

198

USE OF VARIOUS DEVICE GEOMETRIES TO IMPROVE THE PERFORMANCE OF CdTe DETECTORS (*)  

E-Print Network [OSTI]

343 USE OF VARIOUS DEVICE GEOMETRIES TO IMPROVE THE PERFORMANCE OF CdTe DETECTORS (*) K. ZANIO. - The most direct method of increasing the resolution of CdTe gamma ray and x-ray detectors is to increase of Environmental and Biomedical Research. doped CdTe. Devices do not polarize as those having blocking contacts

Paris-Sud XI, Université de

199

NUMERICAL MODELING OF CIGS AND CdTe SOLAR CELLS: SETTING THE BASELINE  

E-Print Network [OSTI]

NUMERICAL MODELING OF CIGS AND CdTe SOLAR CELLS: SETTING THE BASELINE M. Gloeckler, A. Consequently specific baseline parameters for CIGS and CdTe are proposed. The modeling results important complications that are often found in experimental CIGS and CdTe solar cells. 1. INTRODUCTION

Sites, James R.

200

USE OF CdTe DETECTORS IN BONE MINERAL MEASUREMENTS J. VOGEL, J. ULLMAN  

E-Print Network [OSTI]

375 USE OF CdTe DETECTORS IN BONE MINERAL MEASUREMENTS J. VOGEL, J. ULLMAN Nuclear Medicine. Cet ensemble emploie des détecteurs CdTe mesurant la transmission d'un faisceau collimaté de rayons X periods of prolonged bedrest or weightlessness. The unit employs CdTe detectors to mea- sure

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Nonresonant four-wave mixing in photorefractive CdTe crystals using a picosecond parametric generator  

E-Print Network [OSTI]

Nonresonant four-wave mixing in photorefractive CdTe crystals using a picosecond parametric at nonresonant interaction, thus allowing a study of time-resolved carrier transport in CdTe crystals to be made space-charge SC electric fields have been studied in vanadium or germanium doped semi-insulating CdTe

Boyer, Edmond

202

IMPROVEMENTS IN THE MANUFACTURE OF CdTe GAMMA RAY DETECTORS  

E-Print Network [OSTI]

141 IMPROVEMENTS IN THE MANUFACTURE OF CdTe GAMMA RAY DETECTORS S. BRELANT The Aerospace been made in the quality of chlorine-doped CdTe crystals manufactured by the traveling heater method applications of CdTe gamma ray detectors has been the continuous measurement of ablating materials

Paris-Sud XI, Université de

203

CRYSTAL GROWTH BY SOLVENT TECHNIQUES AND CHARACTERISTIC PROPERTIES OF CdTe  

E-Print Network [OSTI]

117 CRYSTAL GROWTH BY SOLVENT TECHNIQUES AND CHARACTERISTIC PROPERTIES OF CdTe T. TAGUCHI, J and holes are obtained. REVUE DE PHYSIQUE APPLIQUÃ?E TOME 12, FÃ?VRIER 1977, PAGE 117 1. Introduction. - CdTe during donor doping since CdTe has a strong tendency for self compensation However, in spite of a great

Paris-Sud XI, Université de

204

APPLICATIONS OF CdTe. A REVIEW Mobil Tyco Solar Energy Corporation, 16 Hickory Drive  

E-Print Network [OSTI]

APPLICATIONS OF CdTe. A REVIEW F. V. WALD Mobil Tyco Solar Energy Corporation, 16 Hickory Drive sont également données. Abstract. 2014 The review considers the history of CdTe in short form advanced. II. APPLICATIONS OF CADMIUM TELLURIDE AND DEVICES BASED ON THIS MATERIAL. Section II. 1 : CdTe

Paris-Sud XI, Université de

205

CHARACTERIZATION OF CdTe WITH PHOTOELECTRONIC TECHNIQUES A. M. MANCINI and C. MANFREDOTTI  

E-Print Network [OSTI]

255 CHARACTERIZATION OF CdTe WITH PHOTOELECTRONIC TECHNIQUES A. M. MANCINI and C. MANFREDOTTI seront discutés dans le cas où elles sont mises en 0153uvre sur CdTe. Abstract. 2014 Thermally stimulated current (TSC) and space-charge limited current (SCLC) measurements have been performed in CdTe grown

Paris-Sud XI, Université de

206

BIOTELEMETRY BASED ON CdTe-DETECTORS J. BOJSEN, N. ROSSING, O. SOEBERG and S. VADSTRUP  

E-Print Network [OSTI]

radionuclide detectors (CdTe) 2-3 mm3 (developed by C. R. N. Strasbourg) have been tested with special to the skin for surface detection [2, 3]. Among several new semiconductor materials the cadmium telluride (CdTe. - The detector probe, developed by C. R. N., Strasbourg, France, consists of a CdTe- crystal (2-3 mm

Paris-Sud XI, Université de

207

EFFECT OF BACK-CONTACT COPPER CONCENTRATION ON CdTe CELL OPERATION  

E-Print Network [OSTI]

EFFECT OF BACK-CONTACT COPPER CONCENTRATION ON CdTe CELL OPERATION A.O. Pudov, M. Gloeckler, S of Mechanical Engineering Colorado State University, Ft. Collins, CO 80523 ABSTRACT CdTe solar cells were Copper is commonly used to form low-barrier contacts to p-type CdTe absorbers. Copper, however, is a fast

Sites, James R.

208

CHARACTERIZATION OF UNDOPED HIGH RESISTIVITY CdTe GROWN BY A THM METHOD  

E-Print Network [OSTI]

185 CHARACTERIZATION OF UNDOPED HIGH RESISTIVITY CdTe GROWN BY A THM METHOD R. STUCK, J. C. MULLER techniques of cadmium tellu- ride crystals (CdTe) allowed to obtain high resistivity crystals of detector shape of the phase diagram of CdTe, it seemed interesting to characterize these materials in order

Paris-Sud XI, Université de

209

Exploring the Potential for High-Quality Epitaxial CdTe Solar Cells , Ana Kanevce2  

E-Print Network [OSTI]

Exploring the Potential for High-Quality Epitaxial CdTe Solar Cells Tao Song1 , Ana Kanevce2 National Renewable Energy Laboratory, Golden, CO, 80401, USA Abstract -- Traditional polycrystalline CdTeV and ~ 20%. Epitaxial CdTe with high-quality, low defect-density, and high carrier density, could yield

Sites, James R.

210

Biaxial CdTe/CaF2 films growth on amorphous surface , F. Tang a  

E-Print Network [OSTI]

electron microscopy Metal organic chemical vapor deposition A continuous and highly biaxially textured CdTe nanorods as a buffer layer. The interface between the CdTe film and CaF2 nanorods and the morphology of the CdTe film were studied by transmission electron microscopy (TEM) and scanning electron microscopy

Wang, Gwo-Ching

211

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS Submitted by Kuo-Jui Hsiao ELECTRON- REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS SOLAR CELLS The CdTe thin-film solar cell has a large absorption coefficient and high theoretical

Sites, James R.

212

Trace formula for dielectric cavities III: TE modes  

E-Print Network [OSTI]

The construction of the semiclassical trace formula for the resonances with the transverse electric (TE) polarization for two-dimensional dielectric cavities is discussed. Special attention is given to the derivation of the two first terms of Weyl's series for the average number of such resonances. The obtained formulas agree well with numerical calculations for dielectric cavities of different shapes.

E. Bogomolny; R. Dubertrand

2012-06-15T23:59:59.000Z

213

STAFF POSITION DESCRIPTION SAN JOSE STA TE HUMAN RESOURCES  

E-Print Network [OSTI]

STAFF POSITION DESCRIPTION SAN JOSE STA TE HUMAN RESOURCES UNIVERSITY Workforce Planning l: 408-924-2250 I408-924-1784 (fax) Job Description Staff Date: Workforce Planning, Human Resources (Name [Workforce Planning reviews the CSU classification standards with essential duties of the positions] F

Su, Xiao

214

Results of a Si/CdTe Compton Telescope  

E-Print Network [OSTI]

We have been developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. We use a Si strip and CdTe pixel detector for the Compton telescope to cover an energy range from 60 keV. For energies above several hundred keV, the higher efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as an absorber and a scatterer. In order to demonstrate the spectral and imaging capability of a CdTe-based Compton Telescope, we have developed a Compton telescope consisting of a stack of CdTe pixel detectors as a small scale prototype. With this prototype, we succeeded in reconstructing images and spectra by solving the Compton equation from 122 keV to 662 keV. The energy resolution (FWHM) of reconstructed spectra is 7.3 keV at 511 keV and 3.1 keV at 122 keV, respectively. The angular resolution obtained at 511 keV is measured to be 12.2 degree (FWHM).

Kousuke Oonuki; Takaaki Tanaka; Shin Watanabe; Shin'ichiro Takeda; Kazuhiro Nakazawa; Takefumi Mitani; Tadayuki Takahashi; Hiroyasu Tajima; Yasushi Fukazawa; Masaharu Nomachi

2005-09-21T23:59:59.000Z

215

Ion-beam-induced damage formation in CdTe  

SciTech Connect (OSTI)

Damage formation in <111>- and <112>-oriented CdTe single crystals irradiated at room temperature and 15 K with 270 keV Ar or 730 keV Sb ions was investigated in situ using Rutherford backscattering spectroscopy (RBS) in channeling configuration. Defect profiles were calculated from the RBS spectra using the computer code DICADA and additional energy-dependent RBS measurements were performed to identify the type of defects. At both temperatures no formation of a buried amorphous layer was detected even after prolonged irradiation with several 10{sup 16} ions/cm{sup 2}. The fact that CdTe is not rendered amorphous even at 15 K suggests that the high resistance to amorphization is caused by the high ionicity of CdTe rather than thermal effects. The calculated defect profiles show the formation of a broad defect distribution that extends much deeper into the crystal than the projected range of the implanted ions at both temperatures. The post-range defects in CdTe thus do not seem to be of thermal origin either, but are instead believed to result from migration driven by the electronic energy loss.

Rischau, C. W.; Schnohr, C. S.; Wendler, E.; Wesch, W. [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

2011-06-01T23:59:59.000Z

216

Diffuse TeV Emission at the Galactic Centre  

E-Print Network [OSTI]

The High-Energy Stereoscopic System (HESS) has detected intense diffuse TeV emission correlated with the distribution of molecular gas along the galactic ridge at the centre of our Galaxy. Earlier HESS observations of this region had already revealed the presence of several point sources at these energies, one of them (HESS J1745-290) coincident with the supermassive black hole Sagittarius A*. It is still not entirely clear what the origin of the TeV emission is, nor even whether it is due to hadronic or leptonic interactions. It is reasonable to suppose, however, that at least for the diffuse emission, the tight correlation of the intensity distribution with the molecular gas indicates a pionic-decay process involving relativistic protons. In this paper, we explore the possible source(s) of energetic hadrons at the galactic centre, and their propagation through a turbulent medium. We conclude that though Sagittarius A* itself may be the source of cosmic rays producing the emission in HESS J1745-290, it cannot be responsible for the diffuse emission farther out. A distribution of point sources, such as pulsar wind nebulae dispersed along the galactic plane, similarly do not produce a TeV emission profile consistent with the HESS map. We conclude that only a relativistic proton distribution accelerated throughout the inter-cloud medium can account for the TeV emission profile measured with HESS.

Elizabeth Wommer; Fulvio Melia; Marco Fatuzzo

2008-04-18T23:59:59.000Z

217

TheerbInsTITuTeSectionname The Erb Institute  

E-Print Network [OSTI]

Conservation & Policy 17 Green Markets 20 Entrepreneurship 24 Corporate Sustainability & Public Policy 27 [ ]Year in Review 2012 #12;ii TheerbInsTITuTeSectionname Social Enterprise 4 Local Impact 7 Energy 10 Education 31 Climate Change & Communication 34 The Erb Institute for Global Sustainable Enterprise Erb Inst

Edwards, Paul N.

218

TeV Particle Astrophysics II: Summary comments  

E-Print Network [OSTI]

A unifying theme of this conference was the use of different approaches to understand astrophysical sources of energetic particles in the TeV range and above. In this summary I review how gamma-ray astronomy, neutrino astronomy and (to some extent) gravitational wave astronomy provide complementary avenues to understanding the origin and role of high-energy particles in energetic astrophysical sources.

Thomas K. Gaisser

2006-12-11T23:59:59.000Z

219

Web Page: http://nuclearphysics.nuclear.lu.se/nosa/ E-mail: nosa2001@nuclear.lu.se  

E-Print Network [OSTI]

Web Page: http://nuclearphysics.nuclear.lu.se/nosa/ E-mail: nosa2001@nuclear.lu.se Nordic Society Nordic aerosol research among the public and policy-makers; · to encourage a multi-disciplinary dialogue: The Aerosol Group at the Division of Nuclear Physics, Physics Department, Lund Institute of Technology, Lund

Mironova, Irina A.

220

Carrier dynamics and activation energy of CdTe quantum dots in a Cd{sub x}Zn{sub 1-x}Te quantum well  

SciTech Connect (OSTI)

We investigate the optical properties of CdTe quantum dots (QDs) in a Cd{sub 0.3}Zn{sub 0.7}Te quantum well (QW) grown on GaAs (100) substrates. Carrier dynamics of CdTe/ZnTe QDs and quantum dots-in-a-well (DWELL) structure is studied using time-resolved photoluminescence (PL) measurements, which show the longer exciton lifetime of the DWELL structure. The activation energy of the electrons confined in the DWELL structure, as obtained from the temperature-dependent PL spectra, was also higher than that of electrons confined in the CdTe/ZnTe QDs. This behavior is attributed to the better capture of carriers into QDs within the surrounding QW.

Han, W. I.; Lee, J. H.; Yu, J. S.; Choi, J. C. [Department of Physics, Yonsei University, Wonju 220-710 (Korea, Republic of); Lee, H. S. [Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

2011-12-05T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Exploring Resonance Levels and Nanostructuring in the PbTe?CdTe System and Enhancement of the Thermoelectric Figure of Merit  

SciTech Connect (OSTI)

We explored the effect of Cd substitution on the thermoelectric properties of PbTe in an effort to test a theoretical hypothesis that Cd atoms on Pb sites of the rock salt lattice can increase the Seebeck coefficient via the formation of a resonance level in the density of states near the Fermi energy. We find that the solubility of Cd is less than previously reported, and CdTe precipitation occurs to create nanostructuring, which strongly suppresses the lattice thermal conductivity. We present detailed characterization including structural and spectroscopic data, transmission electron microscopy, and thermoelectric transport properties of samples of PbTe?x% CdTe?0.055% PbI{sub 2} (x = 1, 3, 5, 7, 10), PbTe?1% CdTe?y% PbI{sub 2} (y = 0.03, 0.045, 0.055, 0.08, 0.1, 0.2), PbTe?5% CdTe?y% PbI{sub 2} (y = 0.01, 0.03, 0.055, 0.08), and PbTe?1% CdTe?z% Sb (z = 0.3, 0.5, 1, 1.5, 2, 3, 4, 5, 6). All samples follow the Pisarenko relationship, and no enhancement of the Seebeck coefficient was observed that could be attributed to a resonance level or a distortion in the density of states. A maximum ZT of 1.2 at 720 K was achieved for the PbTe?1% CdTe?0.055% PbI{sub 2} sample arising from a high power factor of 17 ?W/(cm K{sup 2}) and a very low lattice thermal conductivity of 0.5 W/(m K) at 720 K.

Ahn, Kyunghan; Han, Mi-Kyung; He, Jiaqing; Androulakis, John; Ballikaya, Sedat; Uher, Ctirad; Dravid, Vinayak; Kanatzidis, Mercouri G.

2010-01-01T23:59:59.000Z

222

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) | Department of  

Broader source: Energy.gov (indexed) [DOE]

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) March 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Lighting Solutions: Proposed Penalty (2013-SE-4901) More Documents & Publications Act One: NPCP (2013-CE-49001) Excellence Opto: Proposed Penalty (2013-CE-49002)

223

Thermo Products: Proposed Penalty (2011-SE-1603) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Thermo Products: Proposed Penalty (2011-SE-1603) Thermo Products: Proposed Penalty (2011-SE-1603) Thermo Products: Proposed Penalty (2011-SE-1603) September 28, 2011 DOE issued this Notice of Proposed Civil Penalty Notice to Thermo Products, LLC, alleging that the company certified several models of residential air conditioning heat pumps without performing testing required by DOE regulations. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Thermo Products: Proposed Penalty (2011-SE-1603) More Documents & Publications

224

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) | Department of  

Broader source: Energy.gov (indexed) [DOE]

Proposed Penalty (2013-SE-4901) Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) March 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Lighting Solutions: Proposed Penalty (2013-SE-4901) More Documents & Publications Watermark: Proposed Penalty (2011-SW-2908) Act One: NPCP (2013-CE-49001)

225

Engineered Products: Proposed Penalty (2012-SE-5401) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Proposed Penalty (2012-SE-5401) Proposed Penalty (2012-SE-5401) Engineered Products: Proposed Penalty (2012-SE-5401) July 19, 2012 DOE alleged in a Notice of Proposed Civil Penalty that Engineered Products Company manufactured/privately-labeled and distributed a number of units of noncompliant basic model 15701, a metal halide lamp fixture with a magnetic probe-start ballast in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Engineered Products: Proposed Penalty (2012-SE-5401) More Documents & Publications

226

Hydac: Noncompliance Determination (2012-SE-4107) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Noncompliance Determination (2012-SE-4107) Noncompliance Determination (2012-SE-4107) Hydac: Noncompliance Determination (2012-SE-4107) November 19, 2012 DOE issued a Notice of Noncompliance Determination to Hydac Technology Corporation finding that a variety of electric motor basic models do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. Hydac must immediately notify each person (or company) to whom Hydac distributed the noncompliant products that the products do not meet Federal standards. In addition, Hydac must provide to DOE documents and records showing the number of units Hydac distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties. Hydac: Noncompliance Determination (2012-SE-4107)

227

Haier: Noncompliance Determination (2011-SE-1428) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Haier: Noncompliance Determination (2011-SE-1428) Haier: Noncompliance Determination (2011-SE-1428) Haier: Noncompliance Determination (2011-SE-1428) April 23, 2013 DOE issued a Notice of Noncompliance Determination to Haier America Trading, LLC finding that Haier model HMCM106EA, a freezer, does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Haier must immediately notify each person (or company) to whom Haier distributed the noncompliant products that the product does not meet Federal standards. In addition, Haier must provide to DOE documents and records showing the number of units Haier distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties. Haier: Noncompliance Determination (2011-SE-1428)

228

ET Industries: Noncompliance Determination (2012-SE-2902) | Department of  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Noncompliance Determination (2012-SE-2902) Noncompliance Determination (2012-SE-2902) ET Industries: Noncompliance Determination (2012-SE-2902) May 24, 2013 DOE issued a Notice of Noncompliance Determination to ET Industries, Inc. finding that showerhead basic model TH-1 does not comport with the water conservation standards. DOE determined the product was noncompliant based on DOE testing. ET Industries must immediately notify each person (or company) to whom ET Industries distributed the noncompliant products that the product does not meet Federal standards. In addition, ET Industries must provide to DOE documents and records showing the number of units ET Industries distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties. ET Industries: Noncompliance Determination (2012-SE-2902)

229

Royal Pacific: Proposed Penalty (2013-SE-33004) | Department of Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Proposed Penalty (2013-SE-33004) Proposed Penalty (2013-SE-33004) Royal Pacific: Proposed Penalty (2013-SE-33004) July 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that Royal Pacific, Ltd. failed to certify ceiling fans, ceiling fan light kits, medium base compact fluorescent lamps, and illuminated exit signs as compliant with the applicable energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. Royal Pacific: Proposed Penalty (2013-SE-33004) More Documents & Publications

230

Aspen: Noncompliance Determination (2010-SE-0305) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

0-SE-0305) 0-SE-0305) Aspen: Noncompliance Determination (2010-SE-0305) May 28, 2010 DOE issued a Notice of Noncompliance Determination to Aspen Manufacturing finding that a variety of basic models of split-system air conditioning heat pumps do not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Aspen must immediately notify each person (or company) to whom Aspen distributed the noncompliant products that the product does not meet Federal standards. In addition, Aspen must provide to DOE documents and records showing the number of units Aspen distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties. Aspen: Noncompliance Determination (2010-SE-0305)

231

Fuzhou Sunlight Lighting: Notice of Allowance (2010-SE-1402) | Department  

Broader source: Energy.gov (indexed) [DOE]

Sunlight Lighting: Notice of Allowance (2010-SE-1402) Sunlight Lighting: Notice of Allowance (2010-SE-1402) Fuzhou Sunlight Lighting: Notice of Allowance (2010-SE-1402) October 8, 2010 DOE issued a Notice of Allowance to Resume Distribution, authorizing Fuzhou Sunlight Lighting Electrical Appliance Company, Ltd. to resume distribution of one model of lamp. DOE had previously found certain Fuzhou products did not comport with the applicable energy conservation standards based on Fuzhou's testing. After determining that the original testing was not performed in accordance with DOE procedures, Fuzhou Sunlight provided new test data to DOE demonstrating that one model meets the applicable energy conservation standard when tested in accordance with DOE test procedures. Fuzhou Sunlight Lighting: Notice of Allowance (2010-SE-1402)

232

Midea: Noncompliance Determination (2010-SE-0110) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

0-SE-0110) 0-SE-0110) Midea: Noncompliance Determination (2010-SE-0110) October 5, 2011 DOE issued a Notice of Noncompliance Determination to Midea America Corporation finding that basic model number HS-390C, a chest freezer, does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Midea must immediately notify each person (or company) to whom Midea distributed the noncompliant product that the product does not meet Federal standards. In addition, Midea must provide to DOE documents and records showing the number of units Midea distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties. Midea: Noncompliance Determination (2010-SE-0110) More Documents & Publications

233

Fuzhou Sunlight Lighting: Notice of Allowance (2010-SE-1402) | Department  

Broader source: Energy.gov (indexed) [DOE]

Fuzhou Sunlight Lighting: Notice of Allowance (2010-SE-1402) Fuzhou Sunlight Lighting: Notice of Allowance (2010-SE-1402) Fuzhou Sunlight Lighting: Notice of Allowance (2010-SE-1402) August 10, 2010 DOE issued a Notice of Allowance to Resume Distribution, authorizing Fuzhou Sunlight Lighting Electrical Appliance Company, Ltd. to resume distribution of eleven models of lamps. DOE had previously found certain Fuzhou products did not comport with the applicable energy conservation standards based on Fuzhou's testing. After determining that the original testing was not performed in accordance with DOE procedures, Fuzhou Sunlight provided new test data to DOE demonstrating that eleven models meet the applicable energy conservation standard when tested in accordance with DOE test procedures. Fuzhou Sunlight Lighting: Notice of Allowance (2010-SE-1402)

234

Grainger: Noncompliance Determination (2013-SE-1411) | Department of Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Noncompliance Determination (2013-SE-1411) Noncompliance Determination (2013-SE-1411) Grainger: Noncompliance Determination (2013-SE-1411) April 29, 2013 DOE issued a Notice of Noncompliance Determination to Grainger International Inc. finding that freezer models, privately labeled as the Dayton 5NTX4, the Dayton 5NTX5, and the Dayton 5NTX6 do not comport with the energy conservation standards. Grainger must immediately notify each person (or company) to whom Grainger distributed the noncompliant products that the products do not meet Federal standards. In addition, Grainger must provide to DOE documents and records showing the number of units Grainger distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties. Grainger: Noncompliance Determination (2013-SE-1411)

235

Lattice vibrations of pure and doped GaSe  

SciTech Connect (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

236

CiSE publishes first issue dedicated to Leadership Computing...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

per second. Continue reading CiSE issue on Leadership Computing Mike Papka Jim Hack Facility directors Michael Papka (top) and James Hack (bottom) will be guest editing a...

237

Multiexciton Solar Cells of CuInSe2 Nanocrystals  

Science Journals Connector (OSTI)

Multiexciton Solar Cells of CuInSe2 Nanocrystals ... nanocrystals; photovoltaics; CIGS; multiple excitons; solar cells; photonic curing ... (4-8) Extraction of more than one electron per absorbed photon as electrical current in devices has also been reported,(9-12) with a few instances of device quantum efficiencies (QEs) exceeding 100%, PbS (internal QE only),(13) PbSe (external QE, EQE)(14) nanocrystal solar cells, and an organic device exhibiting a related process of singlet fission. ...

C. Jackson Stolle; Taylor B. Harvey; Douglas R. Pernik; Jarett I. Hibbert; Jiang Du; Dong Joon Rhee; Vahid A. Akhavan; Richard D. Schaller; Brian A. Korgel

2013-12-26T23:59:59.000Z

238

Nanoscale order in ZnSe:(Mg, O)  

SciTech Connect (OSTI)

Self-assembling of 1O4Mg identical tetrahedral clusters resulting in the nanoscale order in ZnSe:(Mg, O) is presented. Co-doping transforms ZnSe into Mg{sub x}Zn{sub 1?x}O{sub y}Se{sub 1?y} alloy of MgO, MgSe, ZnO and ZnSe. The decrease of a sum of the enthalpies of the constituent compounds and diminution of the strain energy are the causes of this phenomenon. The self-assembling conditions are obtained from the free energy minimum when magnesium and oxygen are in the dilute and ultra dilute limits, correspondingly. The occurrence of 1O4Mg clusters and completion of self-assembling when all oxygen atoms are in clusters are results of the continuous phase transitions. The self-assembling occurrence temperature does not depend on the oxygen content and it is a function of magnesium concentration. Mg{sub x}Zn{sub 1?x}O{sub y}Se{sub 1?y} with all oxygen atoms in clusters can be obtained in temperature ranges from T = 206 °C (x = 0.001, y = 1×10{sup ?4}) to T = 456 °C (x = 0.01, y = 1×10{sup ?4}) and from T = 237 °C (x = 0.001, y = 1×10{sup ?6}) to T = 462 °C (x = 0.01, y = 1×10{sup ?6})

Elyukhin, Vyacheslav A. [Department of Electrical Engineering, Centro de Investigación y de Estudios Avanzados del IPN, Avenida Instituto Politecnico Nacional 2508, 07360 México (Mexico)

2014-02-21T23:59:59.000Z

239

29th International Cosmic Ray Conference Pune (2005) 00, 101-104 TeV Observations of EGRET Unidentified Sources  

E-Print Network [OSTI]

29th International Cosmic Ray Conference Pune (2005) 00, 101-104 TeV Observations of EGRET sr), high (>90%) duty factor, TeV gamma-ray observatory is ideal for searching for TeV emission from Milagro has sufficient exposure. Of these 68 sources, 29 are within 10 degrees of the Galactic plane. Te

California at Santa Cruz, University of

240

Electrical, optical, and thermal properties of Sn-doped phase change material Ge2Sb2Te5  

Science Journals Connector (OSTI)

In this article, effect of Sn on the electrical, optical, and thermal properties of Ge2Sb2Te5 is studied. Ge2Sb2Te5, Ge1.55Sb2Te5Sn0.45, and Ge1.1Sb2Te5Sn0.9...alloys are prepared by melt quenching technique and ...

Gurinder Singh; Aman Kaura; Monika Mukul; S. K. Tripathi

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

High efficiency photodetectors fabricated by electrostatic layer-by-layer self-assembly of CdTe quantum dots  

E-Print Network [OSTI]

High efficiency photodetectors fabricated by electrostatic layer-by-layer self-assembly of CdTe 20 October 2008 We demonstrate high-performance photodetectors from multilayers of CdTe quantum dots. The synthesis of CdTe QDs in aqueous solution using cadmium perchlorate hydrate and Al2Te3 was previously re

Lin, Lih Y.

242

ROLE OF COPPER IN THE PERFORMANCE OF CdS/CdTe SOLAR CELLS * , D. Albin2  

E-Print Network [OSTI]

simulations to reproduce and explain some of the experimental results. Introduction The performance of CdTe Cucd in CdTe [1,2]. Cu can also migrate along grain boundaries toward the main junction. The standard with a relatively simpler one in which Cu metal of varying thickness is evaporated on Te-rich CdTe surfaces

Sites, James R.

243

1. INTRODUCTION CdTe/CdS is one of the most promising solar cell for low  

E-Print Network [OSTI]

with CdTe grown by close space sublimation, electrodeposition, spray pyrolysis, vacuum evaporation and RF conversion of CdTe layers, as well as for the intermixing of CdS-CdTe. An optimum annealing condition is required for the formation of an appropriate CdTe1-x-Sx intermixed interface. It is desirable to separately

Romeo, Alessandro

244

Magneto-optical studies of ensembles of semimagnetic self-organized Cd(Mn)Se/Zn(Mn)Se Quantum Dots  

SciTech Connect (OSTI)

Ensembles of Cd(Mn)Se/ZnSe and CdSe/Zn(Mn)Se semimagnetic self-organized quantum dots with different Mn content have been studied by photoluminescence and resonant Raman scattering under strong magnetic fields in Faraday and Voigt geometries and with spectral and polarization selective excitation. Electron spin-flip Raman scattering has been observed in Voigt geometry in the structures with large Mn content. Narrow exciton peaks completely ?{sup ?}?{sup +} polarized have been observed under selective excitation in Faraday geometry in the structures with medium and small Mn content. A number of specific effects manifested themselves in the structures with a smallest Mn content where no Zeeman shift of the photoluminescence bands was observed.

Reshina, I. I.; Ivanov, S. V.; Toropov, A. A. [Ioffe Physical Technical Institute of RAS, Polytechnicheskaya 26, 194021 St. Petersburg (Russian Federation)

2013-12-04T23:59:59.000Z

245

High Efficiency CdTe/CdS Thin Film Solar Cells Prepared by Treating CdTe Films with a Freon Gas in Substitution of CdCl2  

E-Print Network [OSTI]

High Efficiency CdTe/CdS Thin Film Solar Cells Prepared by Treating CdTe Films with a Freon Gas delle Scienze, 37/A-43010 Fontanini, Parma, Italy ABSTRACT: CdTe/CdS thin film solar cells have reached in the preparation of high efficiency CdTe/CdS solar cells is the activation treatment of CdTe film. Most research

Romeo, Alessandro

246

Estudios de Medicina A los 16 aos se matricula de Medicina en el CEU, el primer ao que se  

E-Print Network [OSTI]

1 Estudios de Medicina A los 16 años se matricula de Medicina en el CEU, el primer año que se Grado de Licenciatura (1982), en la recién creada Facultad de Medicina de Alicante. El acontecimiento Facultad de Medicina de Alicante. En 1984 es Jefe de la Unidad de Educación Sanitaria y en 1988, Jefe de la

Escolano, Francisco

247

R Re es se ea ar rc ch h I In nt te er re es st ts s JianHua (Joshua) Qian  

E-Print Network [OSTI]

and prediction in the regions of IRI project sites, and applying climate prediction for local climate in understanding the physics and dynamics of the atmosphere and using weather and climate information climate downscaling and prediction Climate in any local region is closely connected to its neighboring

Qian, Jian-Hua "Joshua"

248

Charge transport properties of CdMnTe radiation detectors  

SciTech Connect (OSTI)

Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature.

Kim K.; Rafiel, R.; Boardman, M.; Reinhard, I.; Sarbutt, A.; Watt, G.; Watt, C.; Uxa, S.; Prokopovich, D.A.; Belas, E.; Bolotnikov, A.E.; James, R.B.

2012-04-11T23:59:59.000Z

249

Characterization of isothermal vapor phase epitaxial (Hg,Cd)Te  

Science Journals Connector (OSTI)

We report on the characterization of mercury cadmium telluride (Hg 1?x Cd x Te) film grown by the isothermal vapor phase epitaxial method (ISOVPE) and on the surface conversion of bulk Hg 1?xCd x Te to larger bandgap material. The crystal perfection is evaluated using defect etching electron beam and electrolyte electroreflectance (EBER and EER) and Rutherford backscattering spectrometry (RBS). Hall measurements are used to measure carrier densities and mobilities. Surface concentrations and concentration profiles are measured for the ISOVPE grown layers by transmission Fourier transform infrared spectroscopy (FTIR) and electron?probe microanalysis (EPMA) to establish quantitative informations about composition control. Metal–insulator?semiconductor (MIS) structures were made and the properties important to device performance such as compositional uniformity storage time and carrier concentration are measured. The ISOVPE layers are compared in quality to films grown by other methods and show promise for MIS devices.

S. B. Lee; L. K. Magel; M. F. S. Tang; D. A. Stevenson; J. H. Tregilgas; M. W. Goodwin; R. L. Strong

1990-01-01T23:59:59.000Z

250

Point Defect Characterization in CdZnTe  

SciTech Connect (OSTI)

Measurements of the defect levels and performance testing of CdZnTe detectors were performed by means of Current Deep Level Transient Spectroscopy (I-DLTS), Transient Charge Technique (TCT), Current versus Voltage measurements (I-V), and gamma-ray spectroscopy. CdZnTe crystals were acquired from different commercial vendors and characterized for their point defects. I-DLTS studies included measurements of defect parameters such as energy levels in the band gap, carrier capture cross sections, and defect densities. The induced current due to laser-generated carriers was measured using TCT. The data were used to determine the transport properties of the detectors under study. A good correlation was found between the point defects in the detectors and their performance.

Gul,R.; Li, Z.; Bolotnikov, A.; Keeter, K.; Rodriguez, R.; James, R.

2009-03-24T23:59:59.000Z

251

MHK Projects/TE4 | Open Energy Information  

Open Energy Info (EERE)

TE4 TE4 < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":5,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"500px","height":"350px","centre":false,"title":"","label":"","icon":"File:Aquamarine-marker.png","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":52.3247,"lon":1.68765,"alt":0,"address":"","icon":"http:\/\/prod-http-80-800498448.us-east-1.elb.amazonaws.com\/w\/images\/7\/74\/Aquamarine-marker.png","group":"","inlineLabel":"","visitedicon":""}]}

252

RARE B MESON DECAYS T.E. Browder \\Lambda  

E-Print Network [OSTI]

Supported by the US Department of Energy c fl 2002 by T.E. Browder #12; 1 Introduction, Motivation on the construction of the Standard Model of particle physics. Recall that in a physical picture with only three. As a result, the weak neutral current, J 0 NC , J 0 NC = u¯u + d c ¯ d c + s c ¯ s c (2) = u¯u + d ¯ d cos 2

Browder, Tom

253

Photoluminescence upconversion in colloidal CdTe quantum dots  

Science Journals Connector (OSTI)

Efficient photoluminescence (PL) up-conversion has been observed in colloidal CdTe quantum dots with an energy gain of as high as 360 meV. Compared with the normal PL, the peak energy of this up-converted PL (UCPL) shows a redshift of about 80 meV, and the corresponding radiative lifetime becomes nearly twice as long. This UCPL is attributed to the carrier recombination involving surface states mainly through a thermal excitation process.

Xiaoyong Wang; W. William Yu; Jiayu Zhang; Jose Aldana; Xiaogang Peng; Min Xiao

2003-09-22T23:59:59.000Z

254

Mr. John E. Kieling, Chief Hazardous Was te Bureau  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

John E. Kieling, Chief John E. Kieling, Chief Hazardous Was te Bureau Depa rtment of Energy Carlsbad Field Office P. O. Box 3090 Carlsbad , New Mexico 88221 NOV 0 5 2013 New Mexico Environment Department 2905 Rodeo Park Drive East. Building 1 Santa Fe, New Mexico 87505-6303 Subject: Panel 6 Closure and Final Waste Emplacement Notifications Dear Mr. Kieling : The purpose of this leiter is 1 0 notify th e New Mexico Environment Department (NMEO) that the

255

Density functional simulations of phase change materials: disordered phases of Ge8Sb2Te11 and Ag/In/Sb/Te alloys  

E-Print Network [OSTI]

E*PCOS2009 Density functional simulations of phase change materials: disordered phases of Ge8Sb2Te75.0Te17.7 (AIST). These represent two families used widely as phase change materials: pseudobinary and more flexible than those of Ag. Key words: Phase change materials, density functional calculations

256

ELUTIONS Inc formerly TeCom | Open Energy Information  

Open Energy Info (EERE)

ELUTIONS Inc formerly TeCom ELUTIONS Inc formerly TeCom Jump to: navigation, search Name ELUTIONS Inc (formerly TeCom) Place Tampa, Florida Zip 33605 Sector Efficiency Product Tampa-based wireless enterprise automation solutions firm. Elutions provides an Active Energy Management service allowing users to increase efficiency by monitoring, forecasting and analyzing utility resource consumption. Coordinates 27.94653°, -82.459269° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":27.94653,"lon":-82.459269,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

257

A New Limit on the Neutrinoless DBD of 130Te  

E-Print Network [OSTI]

We report the present results of CUORICINO a cryogenic experiment on neutrinoless double beta decay (DBD) of 130Te consisting of an array of 62 crystals of TeO2 with a total active mass of 40.7 kg. The array is framed inside of a dilution refrigerator, heavily shielded against environmental radioactivity and high-energy neutrons, and operated at a temperature of ~8 mK in the Gran Sasso Underground Laboratory. Temperature pulses induced by particle interacting in the crystals are recorded and measured by means of Neutron Transmutation Doped thermistors. The gain of each bolometer is stabilized with voltage pulses developed by a high stability pulse generator across heater resistors put in thermal contact with the absorber. The calibration is performed by means of two thoriated wires routinely inserted in the set-up. No evidence for a peak indicating neutrinoless DBD of 130Te is detected and a 90% C.L. lower limit of 1.8E24 years is set for the lifetime of this process. Taking largely into account the uncertainties in the theoretical values of nuclear matrix elements, this implies an upper boud on the effective mass of the electron neutrino ranging from 0.2 to 1.1 eV. This sensitivity is similar to those of the 76Ge experiments.

C. Arnaboldi; D. R. Artusa; F. T. Avignone III; M. Balata; I. Bandac; M. Barucci; J. W. Beeman; C. Brofferio; C. Bucci; S. Capelli; L. Carbone; S. Cebrian; O. Cremonesi; R. J. Creswick; A. de Waard; H. A. Farach; E. Fiorini; G. Frossati; E. Guardincerri; A. Giuliani; P. Gorla; E. E. Haller; J. McDonald; E. B. Norman; A. Nucciotti; E. Olivieri; M. Pallavicini; E. Palmieri; E. Pasca; M. Pavan; M. Pedretti; G. Pessina; S. Pirro; E. Previtali; L. Risegari; C. Rosenfeld; S. Sangiorgio; M. Sisti; A. R. Smith; L. Torres; G. Ventura

2005-01-13T23:59:59.000Z

258

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

SciTech Connect (OSTI)

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

259

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

260

Universal: Noncompliance Determination (2013-SE-26004) | Department of  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Universal: Noncompliance Determination (2013-SE-26004) Universal: Noncompliance Determination (2013-SE-26004) Universal: Noncompliance Determination (2013-SE-26004) September 6, 2013 DOE issued a Notice of Noncompliance Determination to Universal Lighting Technologies, Inc. finding that fluorescent lamp ballast model B140R277HP does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Universal must immediately notify each person (or company) to whom Universal distributed the noncompliant products that the product does not meet Federal standards. In addition, Universal must provide to DOE documents and records showing the number of units Universal distributed and to whom. The manufacturer and/or private labeler of the product may be subject to

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Sears: Noncompliance Determination (2011-SE-1418) | Department of Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Sears: Noncompliance Determination (2011-SE-1418) Sears: Noncompliance Determination (2011-SE-1418) Sears: Noncompliance Determination (2011-SE-1418) June 26, 2012 DOE issued a Notice of Noncompliance Determination to Sears, Roebuck & Co. finding that Kenmore-brand model number 255.19502010 ("19502") and Kenmore-brand model number 255.19702010 ("19702"), compact chest freezers, do not comport with the energy conservation standards. DOE determined the products were noncompliant based on DOE testing. Sears must immediately notify each person (or company) to whom Sears distributed the noncompliant products that the products do not meet Federal standards. In addition, Sears must provide to DOE documents and records showing the number of units Sears distributed and to whom. The manufacturer and/or private labeler of

262

Cooper: Noncompliance Determination (2012-SE-4701) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Cooper: Noncompliance Determination (2012-SE-4701) Cooper: Noncompliance Determination (2012-SE-4701) Cooper: Noncompliance Determination (2012-SE-4701) June 12, 2012 DOE issued a Notice of Noncompliance Determination to Cooper Power Systems, LLC finding that basic models 277-99.28, 277-99.26, and 277-99.22 of distribution transformers do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. Cooper must immediately notify each person (or company) to whom Cooper distributed the noncompliant products that the products do not meet Federal standards. In addition, Cooper must provide to DOE documents and records showing the number of units Cooper distributed and to whom. The manufacturer and/or private labeler of the product may

263

Teddico: Noncompliance Determination (2012-SE-5409) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Teddico: Noncompliance Determination (2012-SE-5409) Teddico: Noncompliance Determination (2012-SE-5409) Teddico: Noncompliance Determination (2012-SE-5409) November 20, 2012 DOE issued a Notice of Noncompliance Determination to The Electrical Design, Development and Implementation Company d/b/a Teddico finding that a variety of basic models of magnetic probe-start metal halide lamp fixtures do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. Teddico must immediately notify each person (or company) to whom Teddico distributed the noncompliant products that the products do not meet Federal standards. In addition, Teddico must provide to DOE documents and records showing the number of units Teddico distributed and to whom. The

264

Simkar: Noncompliance Determination (2012-SE-5408) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Noncompliance Determination (2012-SE-5408) Noncompliance Determination (2012-SE-5408) Simkar: Noncompliance Determination (2012-SE-5408) December 5, 2012 DOE issued a Notice of Noncompliance Determination to Simkar Corporation finding that magnetic probe-start and pulse-start basic models of metal halide lamp fixtures do not comport with the energy conservation standards. DOE determined the products were noncompliant based on Simkar's own testing. Simkar must immediately notify each person (or company) to whom Simkar distributed the noncompliant products that the products do not meet Federal standards. In addition, Simkar must provide to DOE documents and records showing the number of units Simkar distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties.

265

Felix Storch: Noncompliance Determination (2011-SE-1420) | Department of  

Broader source: Energy.gov (indexed) [DOE]

Felix Storch: Noncompliance Determination (2011-SE-1420) Felix Storch: Noncompliance Determination (2011-SE-1420) Felix Storch: Noncompliance Determination (2011-SE-1420) October 5, 2011 DOE issued a Notice of Noncompliance Determination to Felix Storch, Inc., finding that model number CF11ES, a chest freezer does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Felix Storch must immediately notify each person (or company) to whom Felix Storch distributed the noncompliant products that the product does not meet Federal standards. In addition, Felix Storch must provide to DOE documents and records showing the number of units Felix Storch distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil

266

Bigwall: Noncompliance Determination (2013-SE-1412) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Bigwall: Noncompliance Determination (2013-SE-1412) Bigwall: Noncompliance Determination (2013-SE-1412) Bigwall: Noncompliance Determination (2013-SE-1412) April 10, 2013 DOE issued a Notice of Noncompliance Determination to Bigwall Enterprises, Inc. finding that freezer model W1CF106 under the Wellington brand (''the Wellington W1CF106") does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Bigwall Enterprises, Inc. must immediately notify each person (or company) to whom Bigwall distributed the noncompliant products that the product does not meet Federal standards. In addition, Bigwall must provide to DOE documents and records showing the number of units Bigwall distributed and to whom. The manufacturer and/or private labeler of the

267

Leader Electronics: Notice of Allowance (2010-SE-2301) | Department of  

Broader source: Energy.gov (indexed) [DOE]

Leader Electronics: Notice of Allowance (2010-SE-2301) Leader Electronics: Notice of Allowance (2010-SE-2301) Leader Electronics: Notice of Allowance (2010-SE-2301) September 13, 2010 DOE issued a Notice of Allowance to Resume Distribution to Leader Electronics Inc., authorizing Leader Electronics to resume distribution of the external power supply model "MU03-F050040-A1(MU03-F1050-AKOS)". DOE had previously issued a Notice of Non-Compliance Determination based on test results submitted by Leader Electronics showing that certain models were noncompliant. After an internal review, Leader Electronics determined that the original test results reported to DOE were incorrect. Leader has submitted complete test data, which DOE has reviewed closely, and DOE has determined that the model complies with the applicable energy conservation

268

CNA: Noncompliance Determination (2013-SE-1430) | Department of Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Noncompliance Determination (2013-SE-1430) Noncompliance Determination (2013-SE-1430) CNA: Noncompliance Determination (2013-SE-1430) July 1, 2013 DOE issued a Notice of Noncompliance Determination to CNA International, Inc., d/b/a MC Appliance Corp. finding that Magic Chef-brand model HMCF7W ("CNA model HMCF7W") does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. CNA must immediately notify each person (or company) to whom CNA distributed the noncompliant products that the product does not meet Federal standards. In addition, CNA must provide to DOE documents and records showing the number of units CNA distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties.

269

Golden Opportunity: Noncompliance Determination (2013-SE-1418) | Department  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Noncompliance Determination (2013-SE-1418) Noncompliance Determination (2013-SE-1418) Golden Opportunity: Noncompliance Determination (2013-SE-1418) April 24, 2013 DOE issued a Notice of Noncompliance Determination to Golden Opportunity, Inc. finding that freezer models Golden GFC51 and Golden GFC69 do not comport with the energy conservation standards. DOE determined the products were noncompliant based on DOE testing. Golden Opportunity must immediately notify each person (or company) to whom Golden Opportunity distributed the noncompliant products that the products do not meet Federal standards. In addition, Golden Opportunity must provide to DOE documents and records showing the number of units Golden Opportunity distributed and to whom. The manufacturer and/or private labeler of the products may be

270

Leader Electronics: Noncompliance Determination (2010-SE-2301) | Department  

Broader source: Energy.gov (indexed) [DOE]

Noncompliance Determination (2010-SE-2301) Noncompliance Determination (2010-SE-2301) Leader Electronics: Noncompliance Determination (2010-SE-2301) August 24, 2010 DOE issued a Notice of Noncompliance Determination to Leader Electronics, Inc. finding that "NU50-2093400-I3(NU50-21090-300F)" and "MU03-F050040-A1(MU03-Fl050-AKOS)" of external power supplies do not comport with the energy conservation standards. DOE determined the product was noncompliant based on the company's own testing. Leader Electronics must immediately notify each person (or company) to whom Leader Electronics distributed the noncompliant products that the products do not meet Federal standards. In addition, Leader Electronics must provide to DOE documents and records showing the number of units Leader Electronics

271

Central Moloney: Noncompliance Determination (2013-SE-4702) | Department of  

Broader source: Energy.gov (indexed) [DOE]

Central Moloney: Noncompliance Determination (2013-SE-4702) Central Moloney: Noncompliance Determination (2013-SE-4702) Central Moloney: Noncompliance Determination (2013-SE-4702) March 11, 2013 DOE issued a Notice of Noncompliance Determination to Central Moloney, Inc. finding that liquid-immersed distribution transformer basic models 30300150 and 32500095 do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. Central Moloney must immediately notify each person (or company) to whom Central Moloney distributed the noncompliant products that the products do not meet Federal standards. In addition, Central Moloney must provide to DOE documents and records showing the number of units Central Moloney distributed and to whom. The manufacturer and/or private labeler

272

Hicon: Noncompliance Determination (2013-SE-1426) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Hicon: Noncompliance Determination (2013-SE-1426) Hicon: Noncompliance Determination (2013-SE-1426) Hicon: Noncompliance Determination (2013-SE-1426) February 14, 2013 DOE issued a Notice of Noncompliance Determination to Ningbo Hicon International Industry Company, Ltd. finding that model number BD-200, a compact chest freezer, does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Hiicon must immediately notify each person (or company) to whom Hicon distributed the noncompliant products that the product does not meet Federal standards. In addition, Hicon must provide to DOE documents and records showing the number of units Hicon distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil

273

Universal: Noncompliance Determination (2013-SE-26004) | Department of  

Broader source: Energy.gov (indexed) [DOE]

Universal: Noncompliance Determination (2013-SE-26004) Universal: Noncompliance Determination (2013-SE-26004) Universal: Noncompliance Determination (2013-SE-26004) September 6, 2013 DOE issued a Notice of Noncompliance Determination to Universal Lighting Technologies, Inc. finding that fluorescent lamp ballast model B140R277HP does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Universal must immediately notify each person (or company) to whom Universal distributed the noncompliant products that the product does not meet Federal standards. In addition, Universal must provide to DOE documents and records showing the number of units Universal distributed and to whom. The manufacturer and/or private labeler of the product may be subject to

274

SeQuential Biofuels LLC | Open Energy Information  

Open Energy Info (EERE)

SeQuential Biofuels LLC SeQuential Biofuels LLC Jump to: navigation, search Name SeQuential Biofuels LLC Place Portland, Oregon Zip 97231 Sector Biofuels Product A biofuels marketing and distribution company with several offices in Oregon. Coordinates 45.511795°, -122.675629° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":45.511795,"lon":-122.675629,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

275

Fuzhou Sunlight: Noncompliance Determination (2010-SE-1402) | Department of  

Broader source: Energy.gov (indexed) [DOE]

Sunlight: Noncompliance Determination (2010-SE-1402) Sunlight: Noncompliance Determination (2010-SE-1402) Fuzhou Sunlight: Noncompliance Determination (2010-SE-1402) June 16, 2010 DOE issued a Notice of Noncompliance Determination to Fuzhou Sunlight Lighting Electrical Appliance Co., Ltd. finding that a variety of models of incandescent reflector lamps do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. Fuzhou Sunlight must immediately notify each person (or company) to whom Fuzhou Sunlight distributed the noncompliant products that the products do not meet Federal standards. In addition, Fuzhou Sunlight must provide to DOE documents and records showing the number of units Fuzhou Sunlight distributed and to whom. The manufacturer

276

GE Lighting Solutions: Noncompliance Determination (2013-SE-4901) |  

Broader source: Energy.gov (indexed) [DOE]

Noncompliance Determination (2013-SE-4901) Noncompliance Determination (2013-SE-4901) GE Lighting Solutions: Noncompliance Determination (2013-SE-4901) January 11, 2013 DOE issued a Notice of Noncompliance Determination to General Electric Lighting Solutions finding that various models of traffic signal modules do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. GE Lighting Solutions must immediately notify each person (or company) to whom GE Lighting Solutions distributed the noncompliant products that the products do not meet Federal standards. In addition, GE Lighting Solutions must provide to DOE documents and records showing the number of units GE Lighting Solutions distributed and to whom. The manufacturer

277

Aspen: Noncompliance Determination (2011-SE-1602) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Aspen: Noncompliance Determination (2011-SE-1602) Aspen: Noncompliance Determination (2011-SE-1602) Aspen: Noncompliance Determination (2011-SE-1602) October 3, 2011 DOE issued a Notice of Noncompliance Determination to Aspen Manufacturing finding that indoor unit model AEW244 and outdoor unit model NCPC-424-3010 of residential split system central air conditioning system do not comport with the energy conservation standards. DOE determined the product was noncompliant based on the company's own testing. Aspen must immediately notify each person (or company) to whom Aspen distributed the noncompliant products that the product does not meet Federal standards. In addition, Aspen must provide to DOE documents and records showing the number of units Aspen distributed and to whom. The manufacturer and/or private labeler of

278

Precision: Noncompliance Determination (2013-SE-1410) | Department of  

Broader source: Energy.gov (indexed) [DOE]

Precision: Noncompliance Determination (2013-SE-1410) Precision: Noncompliance Determination (2013-SE-1410) Precision: Noncompliance Determination (2013-SE-1410) April 10, 2013 DOE issued a Notice of Noncompliance Determination to Precision Trading Corp. finding that Precision model Premium PFR515M, a freezer, does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Precision must immediately notify each person (or company) to whom Precision distributed the noncompliant products that the product does not meet Federal standards. In addition, Precision must provide to DOE documents and records showing the number of units Precision distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties.

279

Philips: Noncompliance Determination (2012-SE-2605) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Noncompliance Determination (2012-SE-2605) Noncompliance Determination (2012-SE-2605) Philips: Noncompliance Determination (2012-SE-2605) August 31, 2012 DOE issued a Notice of Noncompliance Determination to Philips Lighting Electronics N. A. finding that basic model VEL-1S40-SC, a fluorescent lamp ballast, does not comport with the energy conservation standards. DOE determined the product was noncompliant based on the company's own testing. Philips must immediately notify each person (or company) to whom Philips distributed the noncompliant products that the product does not meet Federal standards. In addition, Philips must provide to DOE documents and records showing the number of units Philips distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties.

280

Bigwall: Noncompliance Determination (2013-SE-1412) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Noncompliance Determination (2013-SE-1412) Noncompliance Determination (2013-SE-1412) Bigwall: Noncompliance Determination (2013-SE-1412) April 10, 2013 DOE issued a Notice of Noncompliance Determination to Bigwall Enterprises, Inc. finding that freezer model W1CF106 under the Wellington brand (''the Wellington W1CF106") does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Bigwall Enterprises, Inc. must immediately notify each person (or company) to whom Bigwall distributed the noncompliant products that the product does not meet Federal standards. In addition, Bigwall must provide to DOE documents and records showing the number of units Bigwall distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties.

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Messungen derK-Konversionskoeffizienten und der Aktivierungsquerschnitte der isomeren Atomkerne Se77m , Se79m , Ge75m und Ge77m  

Science Journals Connector (OSTI)

TheK-conversion coefficients ? K of the nuclear isomers Se77m , Se79m , Ge75m and Ge77m have been measured by d...

Hermann Weigmann

1962-01-01T23:59:59.000Z

282

e S le Se e Mirk ovic, Geetha Priya  

E-Print Network [OSTI]

A Self A e S le Se e Jelena Mirk ovic, Geetha Priya Venk ataramani, on , i ia han om ter cience e sensor fa lu res and str ngent energ onstra nts oseu n qu e des gn hallenges for data forward ng n w

California at Los Angeles, University of

283

Synthesis of a Se0 /calcite composite using hydrothermal1  

E-Print Network [OSTI]

1 Synthesis of a Se0 /calcite composite using hydrothermal1 carbonation of Ca(OH)2 coupled800141p #12;2 Abstract1 2 In this study, the hydrothermal carbonation of calcium hydroxide under high CO2 "crystalline elemental selenium" (carbonate matrix was constituted

Paris-Sud XI, Université de

284

www.sida.se The Impact of the Global Economic  

E-Print Network [OSTI]

www.sida.se The Impact of the Global Economic Crisis on Women's Well-Being and Empowerment Sida, December 02, 2010 Publication series: Women's Economic Empowerment A worker at a steel recycling mill.m.B. Akash #12;#12;A Guide to Principles, Procedures and Working Methods MariaS.Floro AssociateProfessor,DepartmentofEconomics

Lansky, Joshua

285

se de doctorat en informatique Comprendre le Web cach  

E-Print Network [OSTI]

niveau à l'aide de telles descriptions. Abstract e hidden Web (also known as deep or invisible Web'informations, complexité Keywords: hidden Web, deep Web, databases, information extraction, complexity tel-00198150,versionèse de doctorat en informatique Comprendre le Web caché Understanding the Hidden Web Pierre

Paris-Sud XI, Université de

286

First-Principles Study of Back Contact Effects on CdTe Thin Film Solar Cells  

SciTech Connect (OSTI)

Forming a chemically stable low-resistance back contact for CdTe thin-film solar cells is critically important to the cell performance. This paper reports theoretical study of the effects of the back-contact material, Sb{sub 2}Te{sub 3}, on the performance of the CdTe solar cells. First-principles calculations show that Sb impurities in p-type CdTe are donors and can diffuse with low diffusion barrier. There properties are clearly detrimental to the solar-cell performance. The Sb segregation into the grain boundaries may be required to explain the good efficiencies for the CdTe solar cells with Sb{sub 2}Te{sub 3} back contacts.

Du, Mao-Hua [ORNL

2009-01-01T23:59:59.000Z

287

Multi-TeV flaring from blazars: Markarian 421 a case study  

E-Print Network [OSTI]

The TeV blazar Markarian 421 underwent multi-TeV flaring during April 2004 and simultaneously observed in x-ray and TeV energies. It was observed that the TeV outbursts had no counterparts in the lower energies, which implies that this might be an orphan flare. In the context of hadronic model, we have shown that this multi-TeV flaring can be produced due to the interaction of Fermi-accelerated protons of energy $\\lesssim 168$ TeV with the background photons in the low energy tail of the synchrotron self-Compton spectrum of the blazar jet. We fit very well the flaring spectrum with this model. Based on this study, we speculate that Mrk 501 and PG 1553+113 are possible candidates for orphan flaring in the future.

Sahu, Sarira; Rajpoot, Subhash

2015-01-01T23:59:59.000Z

288

The Effect of Structural Vacancies on the Thermoelectric Properties of (Cu2Te)1-x(Ga2Te3)x  

SciTech Connect (OSTI)

We have studied the effects of structural vacancies on the thermoelectric properties of the ternary compounds (Cu2Te)1-x(Ga2Te3)x (x = 0.5, 0.55, 0.571, 0.6, 0.625, 0.667 and 0.75), which are solid solutions found in the pseudo-binary phase diagram for Cu2Te and Ga2Te3. This system possesses tunable structural vacancy concentrations. The x= 0.5 phase, CuGaTe2, is nominally devoid of structural vacancies, while the rest of the compounds contain varying amounts of these features, and the volume density of vacancies increases with Ga2Te3 content. The sample with x = 0.5, 0.55, 0.571, 0.6, 0.625 crystallize in the chalcopyrite structure while the x = 0.667 and 0.75 adopt the Ga2Te3 defect zinc blende structure. Strong scattering of heat carrying phonons by structural defects, leads to the reduction of thermal conductivity, which is beneficial to the thermoelectric performance of materials. On the other hand, these defects also scatter charge carriers and reduce the electrical conductivity. All the samples investigated are p-type semiconductors as inferred by the signs of their respective Hall (RH) and Seebeck (S) coefficients. The structural vacancies were found to scatter phonons strongly, while a combination of increased carrier concentration, and vacancies decreases the Hall mobility ( H), degrading the overall thermoelectric performance. The room temperature H drops from 90 cm2/V s for CuGaTe2 to 13 cm2/V s in Cu9Ga11Te21 and 4.6 cm2/V s in CuGa3Te5. The low temperature thermal conductivity decreases significantly with higher Ga2Te3 concentrations (higher vacancy concentration) due to increased point defect scattering which dominate thermal resistance terms. At high temperatures, the dependence of thermal conductivity on the Ga2Te3 content is less significant. The presence of strong Umklapp scattering leads to low thermal conductivity at high temperatures for all samples investigated. The highest ZT among the samples in this study was found for the defect-free CuGaTe2 with ZT ~ 1.0 at 840K.

Ye, Zuxin [GM Research and Development Center; Cho, Jung Y [GM R& D and Planning, Warren, Michigan; Tessema, Misle [GM Research and Development Center; Salvador, James R. [GM R& D and Planning, Warren, Michigan; Waldo, Richard [GM R& D and Planning, Warren, Michigan; Wang, Hsin [ORNL; Cai, Wei [ORNL

2013-01-01T23:59:59.000Z

289

Density functional theory investigation of the electronic structure and thermoelectric properties of layered MoS{sub 2}, MoSe{sub 2} and their mixed-layer compound  

SciTech Connect (OSTI)

First principles density functional theory calculations were carried out for the 2H-MoQ{sub 2} (Q=S and Se) and their hypothetical mixed-layer compound. Due to the different electronegativities of S and Se atoms on MoQ{sub 2}, the band gap size could be adjusted in mixed-layer compound MoS{sub 2}/MoSe{sub 2}. Also, the indirect band gap in pure MoQ{sub 2} compounds is changed to the pseudo direct band gap in mixed-layer MoS{sub 2}/MoSe{sub 2} which is similar to the monolayer compound. The layer mixing enhances the thermoelectric properties because of the increased density of states around the Fermi level and the decreased band gap size. Therefore, we suggest that this layer mixing approach should be regarded as a useful way to modulate their electronic structures and to improve their thermoelectric properties. -- Graphical abstract: On the basis of density functional calculations we predict that the mixed-layer compounds 2H-MoS{sub 2}/2H-MoSe{sub 2}, in which two different layers 2H-MoS{sub 2} and 2H-MoSe{sub 2}, have enhanced thermoelectric properties because of the increased density of states around the Fermi level and the decreased band gap size. Highlights: • We explored a way of improving TE properties of 2H-MoQ{sub 2} on DFT methods. • The mixed-layer compounds MoS{sub 2}/MoSe{sub 2} have enhanced thermoelectric properties. • This is caused by modulated electronic structure of mixed layer compound. • Layer mixing approach should be regarded as a useful way to improve TE properties.

Lee, Changhoon; Hong, Jisook [Department of Chemistry, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Lee, Wang Ro [Faculty of Liberal Education, Chonbuk National University, Jeonju, Jeonbuk 561-756 (Korea, Republic of); Kim, Dae Yeon [Agency for Defense Development (ADD), Chinhae, Kyungnam 645-600 (Korea, Republic of); Shim, Ji Hoon, E-mail: jhshim@postech.ac.kr [Department of Chemistry, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Divisions of Advanced Nuclear Engineering, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)

2014-03-15T23:59:59.000Z

290

DETERMINATION AND CHARACTERIZATION OF DEEP LEVELS IN p-CdTe(Cl)  

E-Print Network [OSTI]

photons de 122 keV (57Co) et de 5 keV pour des photons de 59 keV (241Am). Abstract. 2014 CdTe single doped CdTe single crystals grown from tellurium solvent have a good resolution for gamma-rays, when. The investigation of the energy levels system of charged centres in CdTe, as well as in other II-VI compounds

Paris-Sud XI, Université de

291

ELECTRIC PROPERTIES OF SEMI-INSULATING CRYSTALS CdTe : Cl  

E-Print Network [OSTI]

239 ELECTRIC PROPERTIES OF SEMI-INSULATING CRYSTALS CdTe : Cl E. N. ARKADYEVA and O. A. MATVEEV A Des mesures d'effet Hall et de conductivité sont effectuées sur des cristaux de CdTe, dopé au chlore and conductivity measurement are carried out on chlorine doped semi- insulating CdTe crystals, of p and n electric

Boyer, Edmond

292

Voltage Dependent Carrier Collection in CdTe Solar Cells D.L. Btzner1  

E-Print Network [OSTI]

Voltage Dependent Carrier Collection in CdTe Solar Cells D.L. Bätzner1 , Guido Agostinelli2 , A to 1000nm, i.e. the band edge region of CdTe. Region I is further divided in a `blue' part between 300 nm III is as well subdivided in region IIIa from about 800 nm to the band gap of CdTe (~850 nm

Romeo, Alessandro

293

CdTe OPTICAL WAVEGUIDE MODULATORS (*) D. L. SPEARS and A. J. STRAUSS  

E-Print Network [OSTI]

401 CdTe OPTICAL WAVEGUIDE MODULATORS (*) D. L. SPEARS and A. J. STRAUSS Lincoln Laboratory guides d'ondes opto-acoustiques et opto-électriques ont été réalisés dans des guides d'ondes n-/n+ CdTe-électriques de faible tension ont été réalisés en appliquant des électrodes en or sur des plaquettes n+ de CdTe

Paris-Sud XI, Université de

294

ELECTROABSORPTION BY IMPURITIES AND DEFECTS IN SEMI-INSULATING CdTe  

E-Print Network [OSTI]

263 ELECTROABSORPTION BY IMPURITIES AND DEFECTS IN SEMI-INSULATING CdTe G. NEU, Y. MARFAING, R des défauts dans CdTe compensé non dopé et dopé au chlore de 1,2 à 1,6 eV. Trois groupes de symétrie. Abstract. 2014 Electroabsorption experiments have been conducted on semi-insulating CdTe prepared

Paris-Sud XI, Université de

295

CdTe-Cu(OH){sub 2} nanocomposite: Aqueous synthesis and characterization  

SciTech Connect (OSTI)

CdTe-Cu(OH){sub 2} nanocomposites were synthesized in aqueous solution by a seed-mediated growth approach. The effect of refluxing time and the concentration of Cu{sup 2+} on the preparation of these samples were measured using UV-visible absorption and photoluminescence analysis. The emission peak of the synthesized nanocomposites (CdTe-Cu(OH){sub 2}) was shifted from 605 (CdTe seed) to 621 nm. The size of CdTe nanoparticles were averaged about 3.22 nm, and the CdTe-Cu(OH){sub 2} nanocomposites were averaged as 5.19 nm. The synthesized CdTe-Cu(OH){sub 2} nanocomposite were characterized with XRD, EDAX, TEM, FT-IR, EPR, and thermal analysis (TG/DTG curves). The results indicate that as-prepared nanoparticles with core/shell structure exhibit interesting optical properties. -- Graphical Abstract: Schematic of aqueous synthesis route for CdTe-Cu(OH){sub 2} nanocomposite and The Stokes shift of CdTe nanocrystals and CdTe-Cu(OH){sub 2} Nanocomposites, (CdTe: emission at 605 nm, CdTe-Cu(OH){sub 2}: emission at 621 nm). Display Omitted Highlights: {yields} CdTe-Cu(OH){sub 2} nanocomposites were synthesized by a seed-mediated growth approach. {yields} The synthetic procedure is simple, and can be easily scaled up. {yields} The effect of refluxing time on the preparation of these samples was measured. {yields} The Cu(OH){sub 2} shell thickness was controlled by the amount of Cu in the solution. {yields} TEM images demonstrated homogeneous size distribution for these nanocomposites.

Abd El-sadek, M.S., E-mail: el_sadek_99@yahoo.co [Nanomaterial Laboratory, Physics Department, Faculty of Science, South Valley University, Qena 83523 (Egypt); Crystal Growth Centre, Anna University Chennai, Chennai 600025 (India); Moorthy Babu, S. [Crystal Growth Centre, Anna University Chennai, Chennai 600025 (India)

2011-05-15T23:59:59.000Z

296

DISSERTATION Role of the Cu-O Defect in CdTe Solar Cells  

E-Print Network [OSTI]

OF THE CU-O DEFECT COMPLEX IN CDTE SOLAR CELLS Thin-film CdTe is one of the leading materials used the defects present in thin-film CdTe deposited for solar cells. One key defect seen in the thin-film CdDISSERTATION Role of the Cu-O Defect in CdTe Solar Cells Submitted by Caroline R. Corwine

Sites, James R.

297

Superficies y Vacio 8, 69-72(1999) Sociedad Mexicana de Ciencias de Superficies y de Vaco. Electronic properties of (CdTe)x(In2Te3)1-x thin films grown by close spaced vapor  

E-Print Network [OSTI]

(CSVT-FE); CdTe and In2Te3 were employed as sources. The temperature of evaporation of the CdTe and In2 the band gap energy from a value as low as 0.6 eV up to 1.5 eV, the band gap of CdTe. It has been reported I. INTRODUCTION The ternary compound CdIn2Te4 is of interest since all compounds formed by mixing CdTe

Meléndez Lira, Miguel Angel

298

Electrical properties of PbTe single crystals with excess tellurium  

SciTech Connect (OSTI)

The effects of excess (up to 0.1 at %) Te atoms and heat treatment at 473 and 573 K for 120 h on the conductivity {sigma}, thermopower {alpha}, and Hall coefficient R of PbTe single crystals are studied. It is shown that excess Te atoms and annealing strongly affect the values and character of the temperature dependences of these parameters and the signs of {alpha} and R at low temperatures, which is caused by the acceptor effect of these atoms and the formation of antisite defects due to localization of Te in vacancies of the lead sublattice upon annealing.

Bagiyeva, G. Z., E-mail: bagieva-gjulandam@rambler.ru; Mustafayev, N. B.; Abdinova, G. Dj.; Abdinov, D. Sh. [National Academy of Sciences of Azerbaijan, Abdullaev Institute of Physics (Azerbaijan)

2011-11-15T23:59:59.000Z

299

Characterization and Analysis of CIGS and CdTE Solar Cells: December 2004 - July 2008  

SciTech Connect (OSTI)

The work reported here embodies a device-physics approach based on careful measurement and interpretation of data from CIGS and CdTe solar cells.

Sites, J. R.

2009-01-01T23:59:59.000Z

300

Some possible sources of IceCube TeV-PeV neutrino events  

E-Print Network [OSTI]

The IceCube Collaboration has observed 37 neutrino events in the energy range $30\\, {\\text TeV}\\lesssim E_{\

Sarira Sahu; Luis Salvador Miranda

2014-08-21T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Review of Photovoltaic Energy Production Using CdTe Thin-Film Modules: Extended Abstract Preprint  

SciTech Connect (OSTI)

CdTe has near-optimum bandgap, excellent deposition traits, and leads other technologies in commercial PV module production volume. Better understanding materials properties will accelerate deployment.

Gessert, T. A.

2008-09-01T23:59:59.000Z

302

Fabrication of ultra thin CdS/CdTe solar cells by magnetron sputtering.  

E-Print Network [OSTI]

?? CdTe is a nearly perfect absorber material for second generation polycrystalline solar cells because the bandgap closely matches the peak of the solar spectrum,… (more)

Plotnikov, Victor

2009-01-01T23:59:59.000Z

303

Construção e caracterização de célula solar tipo barreira Schottky CdTe/Al.  

E-Print Network [OSTI]

??In this work the techniques of hot wall epitaxy (HWE) and molecular beam epitaxy (MBE) on thin films of CdTe (cadmium telluride) were used in… (more)

Denis Rafael de Oliveira Pereira

2011-01-01T23:59:59.000Z

304

E-Print Network 3.0 - arond te dual-axis Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Michigan University Collection: Mathematics 62 BunchTiming Measurement in the Muon Cooling Experiment Summary: Bunch-Timing Measurement in the Muon Cooling Experiment Via TE...

305

File:EIA-PSJ-SE-GAS.pdf | Open Energy Information  

Open Energy Info (EERE)

PSJ-SE-GAS.pdf PSJ-SE-GAS.pdf Jump to: navigation, search File File history File usage Paradox-San Juan Basin, Southeast Part By 2001 Gas Reserve Class Size of this preview: 463 × 599 pixels. Other resolution: 464 × 600 pixels. Full resolution ‎(5,100 × 6,600 pixels, file size: 13.13 MB, MIME type: application/pdf) Description Paradox-San Juan Basin, Southeast Part By 2001 Gas Reserve Class Sources Energy Information Administration Authors Samuel H. Limerick; Lucy Luo; Gary Long; David F. Morehouse; Jack Perrin; Robert F. King Related Technologies Oil, Natural Gas Creation Date 2005-09-01 Extent Regional Countries United States UN Region Northern America States Utah, Colorado, New Mexico, Arizona File history Click on a date/time to view the file as it appeared at that time.

306

Haier: Noncompliance Determination (2011-SE-1408) | Department of Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

08) 08) Haier: Noncompliance Determination (2011-SE-1408) October 18, 2011 DOE issued a Notice of Noncompliance Determination to Haier America Trading, L.L.C. finding that model number HNCM070, a chest freezer, does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Haier must immediately notify each person (or company) to whom Haier distributed the noncompliant products that the product does not meet Federal standards. In addition, Haier must provide to DOE documents and records showing the number of units Haier distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties. Haier: Noncompliance Determination (2011-SE-1408) More Documents & Publications

307

Advanced Distributor Products: Noncompliance Determination (2010-SE-0304) |  

Broader source: Energy.gov (indexed) [DOE]

Advanced Distributor Products: Noncompliance Determination Advanced Distributor Products: Noncompliance Determination (2010-SE-0304) Advanced Distributor Products: Noncompliance Determination (2010-SE-0304) May 28, 2010 DOE issued a Notice of Noncompliance Determination to Advanced Distributor Products finding that basic model N2H348A(G)KB* + H,GE50560 + *8MPV125 and basic model N2H360A(G)KB* + H,GE50560 + MV16J22**B* do not comport with the energy conservation standards. DOE determined the products were noncompliant based on ADP's certification. ADP must immediately notify each person (or company) to whom ADP distributed the noncompliant products that the product does not meet Federal standards. In addition, ADP must provide to DOE documents and records showing the number of units ADP distributed and to whom. The manufacturer and/or private labeler of the

308

Localizing Micro-grids Research for the SE Asian Region  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Localizing Micro-grids Research for the SE Asian Region Localizing Micro-grids Research for the SE Asian Region Speaker(s): Cheng-Guan (Michael) Quah Valerie Choy Date: December 3, 2010 - 12:00pm Location: 90-3122 This presentation discusses developments (and test-beds) of micro-grids and distributed generation systems that are on-going in Singapore and poses the question as to whether simpler versions of such systems would be applicable to meet the challenges of rural electrification and energy poverty particularly those of its closest neighbors. Southeast Asia is an ethnically and culturally diverse region comprising more than 10 nations where 160 million people still live without electricity. Off-grid electrification for rural village communities and eco-resorts using DG and micro-grid systems are conceivable but many technical, political, cultural

309

Haier: Noncompliance Determination (2011-SE-1428) | Department of Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

28) 28) Haier: Noncompliance Determination (2011-SE-1428) April 23, 2013 DOE issued a Notice of Noncompliance Determination to Haier America Trading, LLC finding that Haier model HMCM106EA, a freezer, does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Haier must immediately notify each person (or company) to whom Haier distributed the noncompliant products that the product does not meet Federal standards. In addition, Haier must provide to DOE documents and records showing the number of units Haier distributed and to whom. The manufacturer and/or private labeler of the product may be subject to civil penalties. Haier: Noncompliance Determination (2011-SE-1428) More Documents & Publications

310

Photodetecting Properties of CuInSe2 Homojunctions  

Science Journals Connector (OSTI)

We studied the photovoltaic properties of homojunctions prepared by indium diffusion on p-type CuInSe2 at liquid nitrogen and room temperatures. The CuInSe2 was grown by the Bridgman method. We obtained the photovolatic spectra for both parallel and perpendicular incident lights with respect to the plane of the junciton (both on the p and n sides). The wavelength range was between 1.4 µm and 0.8 µm. We calculated a quantum efficiency of 40% at room temperature. This efficiency remained approximately constant between 1.2 µm and 0.9 µm. We have also measured response times for the junction at 300K. For change of incident light the response time is 1.2?10-6 sec and for change of bias the response time is 4?10-7 sec.

J. González; C. Rincón; A. Redondo; P. Negrete

1980-01-01T23:59:59.000Z

311

File:EIA-PSJ-SE-BOE.pdf | Open Energy Information  

Open Energy Info (EERE)

SE-BOE.pdf SE-BOE.pdf Jump to: navigation, search File File history File usage Paradox-San Juan Basin, Southeast Part By 2001 BOE Reserve Class Size of this preview: 463 × 599 pixels. Other resolution: 464 × 600 pixels. Full resolution ‎(5,100 × 6,600 pixels, file size: 13.15 MB, MIME type: application/pdf) Description Paradox-San Juan Basin, Southeast Part By 2001 BOE Reserve Class Sources Energy Information Administration Authors Samuel H. Limerick; Lucy Luo; Gary Long; David F. Morehouse; Jack Perrin; Robert F. King Related Technologies Oil, Natural Gas Creation Date 2005-09-01 Extent Regional Countries United States UN Region Northern America States Utah, Colorado, New Mexico, Arizona File history Click on a date/time to view the file as it appeared at that time.

312

~~~~: Gmt Lakes Cat-bar) ALTERNaTE I  

Office of Legacy Management (LM)

~~~: Gmt Lakes Cat-bar) ~~~: Gmt Lakes Cat-bar) ALTERNaTE I --------------------------------------- NAME: 333 Iv. Mkhi qr) Aw. thka o ~~~---~~~--~~~_-----__ C I TV : 8 Morim 'Love 82 10 bhh &Q Ir -+----------- STATE- fL I - ------ l OWNER(S) -__----_ past: Current: I --------------------____ Owner contacted q yes p no; _____--_____-____------~~~l if yes, data contacted -_--------__- TYPE OF OPERATION ---_------------- 0 Research & Development q Production scale testing 0 Pilot Scale 0 Bench Scale process 0 Theoretical Studies 0 Sample & Analysis Facility Type p Manufacturing I ! fJ University 0 Research Organization ! 0 Government Sponsored F+ci li ty 0 Other ----~~-~~~----~------ 0 Production 0 Disposal/Storage TYPE OF CUNTRKT ----~---~__----_ / w Prime

313

Simple shear processing of bulk BI?TE? alloys  

E-Print Network [OSTI]

diagram of the ECAE process. 26 FIGURE Page 14. Optical photomicrograph of p-type Biz Te& alloy grains before extrusion. . . . . 29 15. Optical photomicrograph of n-type Bi&Tet alloy grains before extrusion . . . . . 30 16. Schematic of ECAE tool... route C at 0. 3 in/min and 500'C 26. Optical photomicrograph of p-type BisTes alloy grains, after two passes 41 via route C at 0. 01 in/min and 500'C 42 FIGURE 27. Optical photomicrograph of p-type Biz Teq alloy grains, after four passes via route...

Im, Jae-taek

2012-06-07T23:59:59.000Z

314

TeV Astrophysics Constraints on Planck Scale Lorentz Violation  

E-Print Network [OSTI]

We analyze observational constraints from TeV astrophysics on Lorentz violating nonlinear dispersion for photons and electrons without assuming any a priori equality between the photon and electron parameters. The constraints arise from thresholds for vacuum Cerenkov radiation, photon decay and photo-production of electron-positron pairs. We show that the parameter plane for cubic momentum terms in the dispersion relations is constrained to an order unity region in Planck units. We find that the threshold configuration can occur with an asymmetric distribution of momentum for pair creation, and with a hard photon for vacuum Cerenkov radiation.

Ted Jacobson; Stefano Liberati; David Mattingly

2002-09-24T23:59:59.000Z

315

Electromagnetic leptogenesis at the TeV scale  

E-Print Network [OSTI]

We construct an explicit model implementing electromagnetic leptogenesis. In a simple extension of the Standard Model, a discrete symmetry forbids the usual decays of the right-handed neutrinos, while allowing for an effective coupling between the left-handed and right-handed neutrinos through the electromagnetic dipole moment. This generates correct leptogenesis with resonant enhancement and also the required neutrino mass via a TeV scale seesaw mechanism. The model is consistent with low energy phenomenology and would have distinct signals in the next generation colliders, and, perhaps even the LHC.

Debajyoti Choudhury; Namit Mahajan; Sudhanwa Patra; Utpal Sarkar

2011-04-11T23:59:59.000Z

316

Thermal Evaporation and Characterization of Sb2Se3 Thin Film for Substrate Sb2Se3/CdS Solar Cells  

Science Journals Connector (OSTI)

Thermal Evaporation and Characterization of Sb2Se3 Thin Film for Substrate Sb2Se3/CdS Solar Cells ... Here we report Sb2Se3 solar cells fabricated from thermal evaporation. ... Sb2Se3; thermal evaporation; thin film; solar cells ...

Xinsheng Liu; Jie Chen; Miao Luo; Meiying Leng; Zhe Xia; Ying Zhou; Sikai Qin; Ding-Jiang Xue; Lu Lv; Han Huang; Dongmei Niu; Jiang Tang

2014-06-12T23:59:59.000Z

317

A Se-mash Hit | Data.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Se-mash Hit A Se-mash Hit Developer Data Web Services Source Code Challenges Semantic Web Blogs Let's Talk Developers You are here Data.gov » Communities » Developers A Se-mash Hit Submitted by Data.gov Administrator on Tue, 12/18/2012 - 6:11pm Data.gov Mash-A-Thon 1 builds Web 3.0 apps and enthusiasm A lecture by Professor Jim Hendler at the Data.gov Mash-a-Thon 2010 For two days in August, a classroom in Washington, D.C.'s Dupont Circle filled with Federal developers, students and semantic web experts. They shared one purpose: to create a new generation of "linked-data" applications called "mashups" that use Data.gov's free public data in new and innovative ways. The U.S. government is in the vanguard of understanding and using the semantic web, which will transform the World Wide Web. Data will "talk" to one another,

318

Metal contacts on ZnSe and GaN  

SciTech Connect (OSTI)

Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

Duxstad, K.J. [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering; [Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

1997-05-01T23:59:59.000Z

319

Effect of shells on photoluminescence of aqueous CdTe quantum dots  

SciTech Connect (OSTI)

Graphical abstract: Size-tunable CdTe coated with several shells using an aqueous solution synthesis. CdTe/CdS/ZnS quantum dots exhibited high PL efficiency up to 80% which implies the promising applications for biomedical labeling. - Highlights: • CdTe quantum dots were fabricated using an aqueous synthesis. • CdS, ZnS, and CdS/ZnS shells were subsequently deposited on CdTe cores. • Outer ZnS shells provide an efficient confinement of electron and hole inside the QDs. • Inside CdS shells can reduce the strain on the QDs. • Aqueous CdTe/CdS/ZnS QDs exhibited high stability and photoluminescence efficiency of 80%. - Abstract: CdTe cores with various sizes were fabricated in aqueous solutions. Inorganic shells including CdS, ZnS, and CdS/ZnS were subsequently deposited on the cores through a similar aqueous procedure to investigate the effect of shells on the photoluminescence properties of the cores. In the case of CdTe/CdS/ZnS quantum dots, the outer ZnS shell provides an efficient confinement of electron and hole wavefunctions inside the quantum dots, while the middle CdS shell sandwiched between the CdTe core and ZnS shell can be introduced to obviously reduce the strain on the quantum dots because the lattice parameters of CdS is situated at the intermediate-level between those of CdTe and ZnS. In comparison with CdTe/ZnS core–shell quantum dots, the as-prepared water-soluble CdTe/CdS/ZnS quantum dots in our case can exhibit high photochemical stability and photoluminescence efficiency up to 80% in an aqueous solution, which implies the promising applications in the field of biomedical labeling.

Yuan, Zhimin; Yang, Ping, E-mail: mse_yangp@ujn.edu.cn

2013-07-15T23:59:59.000Z

320

Advanced CdTe Photovoltaic Technology: September 2007 - March 2009  

SciTech Connect (OSTI)

During the last eighteen months, Abound Solar (formerly AVA Solar) has enjoyed significant success under the SAI program. During this time, a fully automated manufacturing line has been developed, fabricated and commissioned in Longmont, Colorado. The facility is fully integrated, converting glass and semiconductor materials into complete modules beneath its roof. At capacity, a glass panel will enter the factory every 10 seconds and emerge as a completed module two hours later. This facility is currently undergoing trials in preparation for large volume production of 120 x 60 cm thin film CdTe modules. Preceding the development of the large volume manufacturing capability, Abound Solar demonstrated long duration processing with excellent materials utilization for the manufacture of high efficiency 42 cm square modules. Abound Solar prototype modules have been measured with over 9% aperture area efficiency by NREL. Abound Solar demonstrated the ability to produce modules at industry leading low costs to NREL representatives. Costing models show manufacturing costs below $1/Watt and capital equipment costs below $1.50 per watt of annual manufacturing capacity. Under this SAI program, Abound Solar supported a significant research and development program at Colorado State University. The CSU team continues to make progress on device and materials analysis. Modeling for increased device performance and the effects of processing conditions on properties of CdTe PV were investigated.

Barth, K.

2011-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Electrolyte electroreflectance study of laser annealing effects on the CdTe/Hg0.8Cd0.2Te (111) system  

Science Journals Connector (OSTI)

We have investigated the effects of laser annealing on the CdTe/Hg0.8Cd0.2Te?(111) system by measuring the electrolyte electroreflectance (EER) spectra from both the CdTe layer as well as the interface region. The sample was a Hg0.8Cd0.2Te?(111) single crystal with a 500?Å?thick polycrystallineCdTefilmdeposited on it; a section of the interface was annealed using the neodymium: yttrium aluminum garnet (Nd:YAG) laser 1.06??m line. Our observations indicate the presence of strain due to lattice mismatch at the interface; laser annealing relieves this strain. In addition the annealing also causes the diffusion of Hg ions from the interfacial region into the passivant layer. The changes in the line shapes of the EER spectra also show an improvement in the crystalline quality of the passivant layer.

P. M. Amirtharaj; Fred H. Pollak; J. R. Waterman; P. R. Boyd

1982-01-01T23:59:59.000Z

322

Superficies y Vaco 12, 16-19, Junio 2001 Sociedad Mexicana de Ciencia de Superficies y de Vaco. Near-IR bandgap engineering employing the alloy (CdTe)x(In2Te3)1-x  

E-Print Network [OSTI]

the closed space vapor transport technique combined with free evaporation. As sources we employed CdTe and In thin films 1. Introduction CdTe and its alloys are versatile optoelectronic materials, some of 1.19 eV and 1.15 eV have been reported [5, 6], suggest the use of the compounds In2Te3 and CdTe

Meléndez Lira, Miguel Angel

323

New limits on the $?^{+}$EC and ECEC processes in $^{120}$Te  

E-Print Network [OSTI]

New limits on the double beta processes for $^{120}$Te have been obtained using a 400 cm$^3$ HPGe detector and a source consisting of natural Te0$_2$ powder. At a confidence level of 90% the limits are $0.19\\times 10^{18}$ y for the $\\beta^+$EC$(0\

A S Barabash; F Hubert; Ph Hubert; V Umatov

2007-03-13T23:59:59.000Z

324

A Proposal of the Method for Energy Measurements of Muons over 10 TeV  

Science Journals Connector (OSTI)

......energy determination method of high energy muons, which is based upon an observation...TeV. The uncertainty of the muon energy to be measured can be reduced if...the Editor paratus when a high energy muon in TeV region traverses through......

Tomonori Wada; Takashi Kitamura

1969-06-01T23:59:59.000Z

325

Unravelling the atomic structure of AgInSbTe phase change materials: Theoretical perspective  

E-Print Network [OSTI]

E*PCOS2011 Unravelling the atomic structure of AgInSbTe phase change materials: Theoretical-GST. Key words: phase change materials, Ag/In/Sb/Te alloys, density functional, molecular dynamics 1. INTRODUCTION Phase change (PC) materials are chalcogenide alloys that switch very rapidly between the amorphous

326

Search for Short Duration Bursts of TeV Gamma Rays with the Milagrito Telescope  

E-Print Network [OSTI]

OG 2.3.07 Search for Short Duration Bursts of TeV Gamma Rays with the Milagrito Telescope Gus for short duration bursts of TeV photons. Such bursts may result from "traditional" gamma-ray bursts to gamma-ray bursts, the final stages of black hole evaporation) the most compelling reason may

California at Santa Cruz, University of

327

Unusual Otto excitation dynamics and enhanced coupling of light to TE plasmons in graphene  

E-Print Network [OSTI]

Unusual Otto excitation dynamics and enhanced coupling of light to TE plasmons in graphene Daniel R are a unique and unusual aspect of graphene's plasmonic response that are predicted to manifest when the sign plasmons in graphene. We show that TE plasmons supported by graphene in an Otto configuration unusually

Park, Namkyoo

328

Development of Nanostructures in Thermoelectric Pb-Te-Sb Alloys , L. A. Collins2  

E-Print Network [OSTI]

in the figure of merit of thermoelectric materials. Fabrication of nanostructured thermoelectric materials via the discovery of materials with a high thermoelectric figure of merit, zT, defined as S2 T/, where immiscible thermoelectric materials: PbTe-Sb2Te3. This ternary system was selected for investigation because

329

Bandgap engineering of CdxZn1xTe nanowires Keivan Davami,a  

E-Print Network [OSTI]

junction. These structures have been used in solar cells2,3 and eld effect transistors.4 Alloy nanowires device fabrication. Alloy nano- wires in various systems have been used to construct solar cells into a furnace. In a set of trial experiments, ZnTe (99.99% Aldrich) and CdTe (99.99% Aldrich) source powders

Cuniberti, Gianaurelio

330

Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition  

SciTech Connect (OSTI)

CdTe thin film has been grown by metalorganic chemical vapor deposition (MOCVD) on Ni(100) substrate. Using x-ray pole figure measurements we observed the epitaxial relationship of {111}CdTe// {001}Ni with [110]CdTe//[010]Ni and [112] CdTe//[100]Ni. The 12 diffraction peaks in the (111) pole figure of CdTe film and their relative positions with respect to the four peak positions in the (111) pole figure of Ni substrate are consistent with four equivalent orientational domains of CdTe with three to four superlattice match of about 0.7% in the [110] direction of CdTe and the [010] direction of Ni. The electron backscattered diffraction (EBSD) images show that the CdTe domains are 30 degrees orientated from each other.

GIARE, C [Rensselaer Polytechnic Institute (RPI); RAO, S [Rensselaer Polytechnic Institute (RPI); RILEY, M [Rensselaer Polytechnic Institute (RPI); CHEN, L [Rensselaer Polytechnic Institute (RPI); Goyal, Amit [ORNL; BHAT, I [Rensselaer Polytechnic Institute (RPI); LU, T [Rensselaer Polytechnic Institute (RPI); WANG, G [Rensselaer Polytechnic Institute (RPI)

2012-01-01T23:59:59.000Z

331

ZnO/Sn:In2O3 and ZnO/CdTe band offsets for extremely thin absorber...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ZnOSn:In2O3 and ZnOCdTe band offsets for extremely thin absorber photovoltaics . ZnOSn:In2O3 and ZnOCdTe band offsets for extremely thin absorber photovoltaics . Abstract: Band...

332

Band gap of CdTe and Cd{sub 0.9}Zn{sub 0.1}Te crystals  

SciTech Connect (OSTI)

The band gap E{sub g} of the CdTe and Cd{sub 0.9}Zn{sub 0.1}Te crystals and its temperature dependence are determined by optical methods. This is motivated by considerable contradictoriness of the published data, which hampers the interpretation and calculation of characteristics of detectors of X-ray and {gamma} radiation based on these materials (E{sub g} = 1.39-1.54 and 1.51-1.6 eV for CdTe and Cd{sub 0.9}Zn{sub 0.1}Te, respectively). The used procedure of determination of E{sub g} is analyzed from the viewpoint of the influence of the factors leading to inaccuracies in determination of its value. The measurements are performed for well-purified high-quality samples. The acquired data for CdTe (E{sub g} = 1.47-1.48 eV) and Cd{sub 0.9}Zn{sub 0.1}Te (E{sub g} = 1.52-1.53 eV) at room temperature substantially narrow the range of accurate determination of E{sub g}.

Kosyachenko, L. A., E-mail: lakos@chv.ukrpact.net; Sklyarchuk, V. M.; Sklyarchuk, O. V.; Maslyanchuk, O. L. [Chernovtsy National University (Ukraine)

2011-10-15T23:59:59.000Z

333

Phase formation and phase transformations in Bi-Te films with nanoscale thickness  

SciTech Connect (OSTI)

The processes of phase formation are studied in a binary Bi-Te system using the kinematic electron diffraction technique. It is established that, in the case of both simultaneous and layer-by-layer deposition of bismuth and tellurium and irrespective of the order of their deposition, phases with compositions Bi{sub 2}Te{sub 3} and BiTe are formed at the condensation plane in the amorphous and crystalline state, respectively. The amorphous Bi{sub 2}Te{sub 3} phase is stable at room temperature and crystallizes at a temperature of 423 K. It is shown that ordering of the phase BiTe is not a consequence of atomic order of the structure; rather, it is caused by the real structure of the object (by blocks)

Akhmedov, K. M. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)], E-mail: axmedovqurban@rambler.ru

2008-09-15T23:59:59.000Z

334

Growth of CdTe thin films on graphene by close-spaced sublimation method  

SciTech Connect (OSTI)

CdTe thin films grown on bi-layer graphene were demonstrated by using the close-spaced sublimation method, where CdTe was selectively grown on the graphene. The density of the CdTe domains was increased with increasing the number of the defective sites in the graphene, which was controlled by the duration of UV exposure. The CdTe growth rate on the bi-layer graphene electrodes was 400?nm/min with a bandgap energy of 1.45–1.49?eV. Scanning electron microscopy, micro-Raman spectroscopy, micro-photoluminescence, and X-ray diffraction technique were used to confirm the high quality of the CdTe thin films grown on the graphene electrodes.

Jung, Younghun; Yang, Gwangseok; Kim, Jihyun, E-mail: hyunhyun7@korea.ac.kr [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of)] [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Chun, Seungju; Kim, Donghwan [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)] [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

2013-12-02T23:59:59.000Z

335

Cd-rich and Te-rich low-temperature photoluminescence in cadmium telluride  

SciTech Connect (OSTI)

Low-temperature photoluminescence emission spectra were measured in cadmium telluride (CdTe) samples in which composition was varied to promote either Cd or Te-rich stoichiometry. The ability to monitor stoichiometry is important, since it has been shown to impact carrier recombination. Te-rich samples show transitions corresponding to acceptor-bound excitons (?1.58?eV) and free-electron to acceptor transitions (?1.547?eV). In addition to acceptor-bound excitons, Cd-rich samples show transitions assigned to donor-bound excitons (1.591?eV) and Te vacancies at 1.552?eV. Photoluminescence is a noninvasive way to monitor stoichiometric shifts induced by post-deposition anneals in polycrystalline CdTe thin films deposited by close-spaced sublimation.

Albin, D. S., E-mail: david.albin@nrel.gov; Kuciauskas, D.; Ma, J.; Metzger, W. K.; Burst, J. M.; Moutinho, H. R.; Dippo, P. C. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2014-03-03T23:59:59.000Z

336

TenTen: A New Array of Multi-TeV Imaging Cherenkov Telescopes  

E-Print Network [OSTI]

The exciting results from H.E.S.S. point to a new population of gamma-ray sources at energies E > 10 TeV, paving the way for future studies and new discoveries in the multi-TeV energy range. Connected with these energies is the search for sources of PeV cosmic-rays (CRs) and the study of multi-TeV gamma-ray production in a growing number of astrophysical environments. TenTen is a proposed stereoscopic array (with a suggested site in Australia) of modest-sized (10 to 30m^2) Cherenkov imaging telescopes with a wide field of view (8 to 10deg diameter) optimised for the E~10 to 100 TeV range. TenTen will achieve an effective area of ~10 km^2 at energies above 10 TeV. We outline here the motivation for TenTen and summarise key performance parameters.

Rowell, G; Clay, R; Dawson, B; Denman, J; Protheroe, R; Smith, A G K; Thornton, G; Wild, N

2007-01-01T23:59:59.000Z

337

TenTen: A New Array of Multi-TeV Imaging Cherenkov Telescopes  

E-Print Network [OSTI]

The exciting results from H.E.S.S. point to a new population of gamma-ray sources at energies E > 10 TeV, paving the way for future studies and new discoveries in the multi-TeV energy range. Connected with these energies is the search for sources of PeV cosmic-rays (CRs) and the study of multi-TeV gamma-ray production in a growing number of astrophysical environments. TenTen is a proposed stereoscopic array (with a suggested site in Australia) of modest-sized (10 to 30m^2) Cherenkov imaging telescopes with a wide field of view (8 to 10deg diameter) optimised for the E~10 to 100 TeV range. TenTen will achieve an effective area of ~10 km^2 at energies above 10 TeV. We outline here the motivation for TenTen and summarise key performance parameters.

G. Rowell; V. Stamatescu; R. Clay; B. Dawson; J. Denman; R. Protheroe; A. G. K. Smith; G. Thornton; N. Wild

2007-10-10T23:59:59.000Z

338

V-183: Cisco TelePresence TC and TE Bugs Let Remote Users Deny Service and  

Broader source: Energy.gov (indexed) [DOE]

3: Cisco TelePresence TC and TE Bugs Let Remote Users Deny 3: Cisco TelePresence TC and TE Bugs Let Remote Users Deny Service and Remote Adjacent Authenticated Users Gain Root Shell Access V-183: Cisco TelePresence TC and TE Bugs Let Remote Users Deny Service and Remote Adjacent Authenticated Users Gain Root Shell Access June 21, 2013 - 6:00am Addthis PROBLEM: Three vulnerabilities were reported in Cisco TelePresence TC and TE PLATFORM: The following product models are affected by the vulnerabilities: Cisco TelePresence MX Series Cisco TelePresence System EX Series Cisco TelePresence Integrator C Series Cisco TelePresence Profiles Series running Cisco TelePresence Quick Set Series Cisco IP Video Phone E20 ABSTRACT: Cisco TelePresence TC and TE Software contain two vulnerabilities in the implementation of the Session Initiation Protocol (SIP) that could allow an

339

CdTe Feedstock Development and Validation: Cooperative Research and Development Final Report, CRADA Number CRD-08-00280  

SciTech Connect (OSTI)

The goal of this work was to evaluate different CdTe feedstock formulations (feedstock provided by Redlen) to determine if they would significantly improve CdTe performance with ancillary benefits associated with whether changes in feedstock would affect CdTe cell processing and possibly reliability of cells. Feedstock also included attempts to intentionally dope the CdTe with pre-selected elements.

Albin, D.

2011-05-01T23:59:59.000Z

340

Investigation of Junction Properties of CdS/CdTe Solar Cells and their Correlation to Device Properties (Presentation)  

SciTech Connect (OSTI)

The objective of the Junction Studies are: (1) understand the nature of the junction in the CdTe/CdS device; (2) correlate the device fabrication parameters to the junction formation; and (3) develop a self consistent device model to explain the device properties. Detailed analysis of CdS/CdTe and SnO{sub 2}/CdTe devices prepared using CSS CdTe is discussed.

Dhere, R. G.; Zhang, Y.; Romero, M. J.; Asher, S. E.; Young, M.; To, B.; Noufi, R.; Gessert, T. A.

2008-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa  

E-Print Network [OSTI]

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa , Alessio in the fabrication of high efficiency CdTe/CdS thin film solar cells. Usually, it is done first by etching the Cd: Back Contact, CdTe, Thin Film 1 INTRODUCTION The back contact in the CdTe/CdS thin film solar cell

Romeo, Alessandro

342

OPTIMIZATION OF GRADED BAND GAP CdHgTe SOLAR CELLS A. BOUAZZI (*), Y. MARFAING and J. MIMILA-ARROYO  

E-Print Network [OSTI]

limited to 6 % in Cu2Te/CdTe junctions [4, 5], 7.9 % in CdS/CdTe heterojunctions and 6 % in homojunc with uniform doping followed by a base region with uni- form gap and doping. Our goal is to find the optimum

Boyer, Edmond

343

PHONONS-DEFECTS INTERACTIONS IN CdTe J. L. TISSOT, P. L. VUILLERMOZ and A. LAUGIER  

E-Print Network [OSTI]

267 PHONONS-DEFECTS INTERACTIONS IN CdTe J. L. TISSOT, P. L. VUILLERMOZ and A. LAUGIER Laboratoire Einstein, 69621 Villeurbanne Cedex, France Résumé. 2014 Les défauts électriquement inactifs dans CdTe ont of electrically inactive defects has been performed on CdTe single crystals by two different experimental

Boyer, Edmond

344

Interference effects in photoreflectance and contactless electroreflectance spectra of CdTe films grown on Si substrate  

E-Print Network [OSTI]

Interference effects in photoreflectance and contactless electroreflectance spectra of CdTe films and contactless electroreflectance CER spectra of CdTe films grown on Si substrate, at energies below the band gap of CdTe. The simultaneous observation of OF in the reflectance (R) spectrum having the same period

Ghosh, Sandip

345

PHYSICAL REVIEW B 84, 205305 (2011) Spin-phonon coupling in single Mn-doped CdTe quantum dot  

E-Print Network [OSTI]

PHYSICAL REVIEW B 84, 205305 (2011) Spin-phonon coupling in single Mn-doped CdTe quantum dot C. L dynamics of a single Mn atom in a laser driven CdTe quantum dot is addressed theoretically. Recent of single Mn-doped CdTe dots, information about the quantum spin state of a single Mn atom is extracted from

Paris-Sud XI, Université de

346

Effect of Shunts on Thin-Film CdTe Module Performance. Galymzhan T. Koishiyev, James R. Sites  

E-Print Network [OSTI]

Effect of Shunts on Thin-Film CdTe Module Performance. Galymzhan T. Koishiyev, James R. Sites circuit model is used to analyze the impact of shunts on basic performance parameters of a CdTe thin with each other in their effect on the module. To address these questions, a 2-D circuit model of a CdTe

Sites, James R.

347

CdTe EPITAXIAL FILMS AND THEIR PROPERTIES S. N. MAXIMOVSKY, I. P. REVOCATOVA, V. M. SALMAN,  

E-Print Network [OSTI]

161 CdTe EPITAXIAL FILMS AND THEIR PROPERTIES S. N. MAXIMOVSKY, I. P. REVOCATOVA, V. M. SALMAN, M CdTe films of p and n type conductivity with a given devia- tion of film composition from PHYSIQUE APPLIQUÃ?E TOME 12, FÃ?VRIER 1977, PAGE 161 The design of reliable CdTe nuclear radiation counters

Paris-Sud XI, Université de

348

Post-Synthesis Crystallinity Tailoring of Water-Soluble Polymer Encapsulated CdTe Nanoparticles using Rapid Thermal Annealing  

E-Print Network [OSTI]

Post-Synthesis Crystallinity Tailoring of Water-Soluble Polymer Encapsulated CdTe Nanoparticles The crystallinity of colloidal CdTe nanoparticles has been enhanced post synthesis. This control over CdTe NPs have been demonstrated suitable for use in applications involving efficient solar cells

349

A SMALL PORTABLE DETECTOR HEAD USING MIS-CONTACTED CdTe FOR X-RAY SPECTROMETRY  

E-Print Network [OSTI]

339 A SMALL PORTABLE DETECTOR HEAD USING MIS-CONTACTED CdTe FOR X-RAY SPECTROMETRY P. EICHINGER for semiconductor radiation detectors is discussed. A versatile head consisting of a 2 mm thick, 10 mm diameter CdTe and its applica- tion to CdTe and CdS has already been published [2, 3], but because of the many

Paris-Sud XI, Université de

350

Substrate effect on CdTe layers grown by metalorganic vapor phase N. V. Sochinskiia),b)  

E-Print Network [OSTI]

Substrate effect on CdTe layers grown by metalorganic vapor phase epitaxy N. V. Sochinskiia for publication 30 December 1996 CdTe layers were grown by metalorganic vapor phase epitaxy MOVPE on different substrates like sapphire, GaAs, and CdTe wafers. The growth was carried out at the temperature 340 °C

Viña, Luis

351

Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-film CdTe Caroline R. Corwine,1  

E-Print Network [OSTI]

Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-film CdTe Caroline R. Corwine Laboratory, Golden, CO 80401 ABSTRACT Polycrystalline thin-film CdTe is one of the leading materials used various process steps alter defect states in the CdTe layer. Low-temperature photoluminescence (PL

Sites, James R.

352

CARRIER TRANSPORT AND TRAPPING PROCESS IN HIGH-RESISTIVITY CdTe GROWN BY A MODIFIED THM  

E-Print Network [OSTI]

189 CARRIER TRANSPORT AND TRAPPING PROCESS IN HIGH-RESISTIVITY CdTe GROWN BY A MODIFIED THM T, PAGE 189 1. Introduction. - Recent results of studies on carrier transport in high-purity CdTe crystals current measure- ments. This paper discusses trapping and detrapping effects in high-resistivity CdTe

Paris-Sud XI, Université de

353

Micron-Resolution Photocurrent of CdTe Solar Cells Using Multiple Wavelengths Jason F. Hiltner1  

E-Print Network [OSTI]

Micron-Resolution Photocurrent of CdTe Solar Cells Using Multiple Wavelengths Jason F. Hiltner1 variations in the quantum efficiency near the CdTe band gap, which track intermixing of Cd wavelengths with energies near and slightly below the CdTe band gap (1.5 eV) to be used. Temperature tuning

Sites, James R.

354

Paul Sellin, Centre for Nuclear and Radiation Physics Charge transport and mobility mapping in CdTe  

E-Print Network [OSTI]

Paul Sellin, Centre for Nuclear and Radiation Physics Charge transport and mobility mapping in CdTe, JAP 92 (2002) 3198-3206 Introduction Motivation for this Work: r THM-grown CdTe supplied by Eurorad signal response? r Pulse shape analysis can identify regions of trapping or reduced mobility r Does CdTe

Sellin, Paul

355

Space-charge-limited currents in an Se{sub 95}As{sub 5} chalcogenide glass-like semiconductor system containing EuF{sub 3} impurities  

SciTech Connect (OSTI)

It is established that charge carrier (hole) transport in the Al-Se{sub 95}As{sub 5} Left-Pointing-Angle-Bracket EuF{sub 3} Right-Pointing-Angle-Bracket -Te structure is effected by unipolar injection currents limited by space charges with the involvement of two capture trap groups. Shallow traps corresponding to charged intrinsic defects C{sub 1}{sup -} are related to broken selenium bonds. Deep traps corresponding to charged intrinsic defects P{sub 2}{sup -} are formed by arsenic atoms with broken coordination. It is shown that the EuF{sub 3} impurity strongly affects the concentration of the capture traps, especially those localized near the Fermi level.

Isayev, A. I.; Mekhtiyeva, S. I.; Qaribova, S. N., E-mail: sqaribova@rambler.ru [Azerbaijan National Academy of Sciences, Abdullaev Institute of Physics (Azerbaijan)

2011-12-15T23:59:59.000Z

356

ATLAS SUSY search prospects at 10 TeV  

E-Print Network [OSTI]

The search for physics beyond the Standard Model (BSM) is one of the most important goals for the general purpose detector ATLAS at the Large Hadron Collider at CERN. Already with early LHC data, the ATLAS experiment should be sensitive to discover physics beyond the Standard Model. This paper summarizes the prospects of the ATLAS experiment to find experimental evidence for Supersymmetry (SUSY) and Universal Extra Dimensions (UED) in channels with jets, leptons and missing transverse energy for an integrated luminosity of L = 200pb-1 at a centre-of-mass energy sqrt s = 10 TeV. Only a selection of the results is presented focussing on the the discovery reach for inclusive searches.

Janet Dietrich

2009-10-29T23:59:59.000Z

357

STATE OF WASHINGTON DEPARTMENT OF COMMERCE 1011 Plum Street SE  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

STATE OF WASHINGTON STATE OF WASHINGTON DEPARTMENT OF COMMERCE 1011 Plum Street SE ï‚Ÿ PO Box 42525 ï‚Ÿ Olympia, Washington 98504-2525 ï‚Ÿ (360) 725-4000 www.commerce.wa.gov July 33, 2013 Roland J. Risser Building Technologies Program Manager Office of Energy Efficiency and Renewable Energy U.S. Department of Energy 1000 Independence Avenue SW, Mail Stop EE-2J Washington, DC 20585-0121 RE: State Certification of Residential and Commercial Building Energy Codes Dear Mr. Risser: In compliance with Title III of the Energy Conservation and Production Act (ECPA) of 1976, as amended, this is to certify that the State of Washington has adopted the 2012 Edition, Washington State Energy Code, which meets or exceeds the 2012 version of the International Energy Conservation Code (IECC) for low-rise residential

358

SE-MA-NO Electric Coop | Open Energy Information  

Open Energy Info (EERE)

MA-NO Electric Coop MA-NO Electric Coop Jump to: navigation, search Name SE-MA-NO Electric Coop Place Missouri Utility Id 16851 Utility Location Yes Ownership C NERC Location SERC NERC SERC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Municipal HPS 100 W Lighting Municipal HPS 250 W Lighting Residential Residential Residential/Commercial HPS 100 W Lighting Residential/Commercial HPS 250 W Lighting Average Rates Residential: $0.0804/kWh Commercial: $0.0763/kWh Industrial: $0.0649/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a"

359

Boson effective charges for light Se, Kr, and Sr isotopes  

Science Journals Connector (OSTI)

A consistent analysis of E2 transition probabilities for nine neutron-deficient even-even Se, Kr, and Sr isotopes has been performed, based on previous parametrizations for these nuclei within the proton-neutron interacting-boson model, from which boson effective charges e? and e? are deduced. Two sets of effective charges are obtained, one set having e??e? for most of the nuclei studied, and the other set having e? substantially larger than e? for most of the nuclei. For both sets, e? tends to decrease with increasing neutron number, while e? is roughly constant. More information on mixed-symmetry states is needed to determine which set is valid.

A. F. Barfield and K. P. Lieb

1990-04-01T23:59:59.000Z

360

Fluorescence quenching of CdSe quantum dots on graphene  

SciTech Connect (OSTI)

We studied systematically the fluorescence quenching of CdSe quantum dots (QDs) on graphene and its multilayers, as well as graphene oxide (GO) and reduced graphene oxide (rGO). Raman intensity of QDs was used as a quantitatively measurement of its concentration in order to achieve a reliable quenching factor (QF). It was found that the QF of graphene (?13.1) and its multilayers is much larger than rGO (?4.4), while GO (?1.5) has the lowest quenching efficiency, which suggests that the graphitic structure is an important factor for quenching the fluorescence of QDs. It was also revealed that the QF of graphene is not strongly dependent on its thicknesses.

Guo, Xi Tao; Hua Ni, Zhen, E-mail: zhni@seu.edu.cn; Yan Nan, Hai; Hui Wang, Wen [Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189 (China)] [Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189 (China); Yan Liao, Chun [Physics Department, National Photoelectric Technology and Functional Materials and Application of Science and Technology International Cooperation Base, Northwest University, Xi'an 710069 (China)] [Physics Department, National Photoelectric Technology and Functional Materials and Application of Science and Technology International Cooperation Base, Northwest University, Xi'an 710069 (China); Zhang, Yan; Wei Zhao, Wei [Jiangsu Key Laboratory for Design and Fabrication of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211189 (China)] [Jiangsu Key Laboratory for Design and Fabrication of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211189 (China)

2013-11-11T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Geometric Tracking Control of a Quadrotor UAV on SE(3)  

E-Print Network [OSTI]

This paper provides new results for the tracking control of a quadrotor unmanned aerial vehicle (UAV). The UAV has four input degrees of freedom, namely the magnitudes of the four rotor thrusts, that are used to control the six translational and rotational degrees of freedom, and to achieve asymptotic tracking of four outputs, namely, three position variables for the vehicle center of mass and the direction of one vehicle body-fixed axis. A globally defined model of the quadrotor UAV rigid body dynamics is introduced as a basis for the analysis. A nonlinear tracking controller is developed on the special Euclidean group SE(3) and it is shown to have desirable closed loop properties that are almost global. Several numerical examples, including an example in which the quadrotor recovers from being initially upside down, illustrate the versatility of the controller.

Lee, Taeyoung; McClamroch, N Harris

2010-01-01T23:59:59.000Z

362

Carrier cooling and exciton formation in GaSe  

Science Journals Connector (OSTI)

The initial cooling of hot carriers and the subsequent exciton formation in GaSe are studied by time-resolved photoluminescence (PL) using femtosecond up-conversion techniques. From the time-resolved PL spectra of this layered III-VI semiconductor two different energy relaxation channels are derived. After an initial subpicosecond cooling due to Fröhlich-type interaction of carriers with longitudinal optical E?(22) phonons a slower regime follows, which is dominated by deformation potential interaction with the nonpolar optical A1?(12) phonons. The coupling constant for nonpolar optical phonon scattering is derived. The subsequent formation of excitons is studied at different carrier densities and detection energies. A cross section for the free-exciton formation is determined based on a rate equation model.

S. Nüsse; P. Haring Bolivar; H. Kurz; V. Klimov; F. Levy

1997-08-15T23:59:59.000Z

363

File:EIA-PSJ-SE-LIQ.pdf | Open Energy Information  

Open Energy Info (EERE)

File File Edit with form History Facebook icon Twitter icon » File:EIA-PSJ-SE-LIQ.pdf Jump to: navigation, search File File history File usage Paradox-San Juan Basin, Southeast Part By 2001 Liquids Reserve Class Size of this preview: 463 × 599 pixels. Other resolution: 464 × 600 pixels. Full resolution ‎(5,100 × 6,600 pixels, file size: 13.12 MB, MIME type: application/pdf) Description Paradox-San Juan Basin, Southeast Part By 2001 Liquids Reserve Class Sources Energy Information Administration Authors Samuel H. Limerick; Lucy Luo; Gary Long; David F. Morehouse; Jack Perrin; Robert F. King Related Technologies Oil, Natural Gas Creation Date 2005-09-01 Extent Regional Countries United States UN Region Northern America States Utah, Colorado, New Mexico, Arizona

364

Prospects for Electroweakino Discovery at a 100 TeV Hadron Collider  

E-Print Network [OSTI]

We investigate the prospects of discovering split Supersymmetry at a future 100 TeV proton-proton collider through the direct production of electroweakino next-to-lightest-supersymmetric-particles (NLSPs). We focus on signatures with multi-lepton and missing energy: $3\\ell$, opposite-sign dileptons and same-sign dileptons. We perform a comprehensive study of different electroweakino spectra. A 100 TeV collider with 3000/fb data is expected to exclude Higgsino thermal dark matter candidates with $m_{\\rm{LSP}}\\sim 1 $ TeV if Wino NLSPs are lighter than about 3.2 TeV. The $3\\ell$ search usually offers the highest mass reach, which varies in the range of (2-4) TeV depending on scenarios. In particular, scenarios with light Higgsinos have generically simplified parameter dependences. We also demonstrate that, at a 100 TeV collider, lepton collimation becomes a crucial issue for NLSPs heavier than about 2.5 TeV. We finally compare our results with the discovery prospects of gluino pair productions and deduce which ...

Gori, Stefania; Wang, Lian-Tao; Wells, James D

2014-01-01T23:59:59.000Z

365

Prospects for Electroweakino Discovery at a 100 TeV Hadron Collider  

E-Print Network [OSTI]

We investigate the prospects of discovering split Supersymmetry at a future 100 TeV proton-proton collider through the direct production of electroweakino next-to-lightest-supersymmetric-particles (NLSPs). We focus on signatures with multi-lepton and missing energy: $3\\ell$, opposite-sign dileptons and same-sign dileptons. We perform a comprehensive study of different electroweakino spectra. A 100 TeV collider with 3000/fb data is expected to exclude Higgsino thermal dark matter candidates with $m_{\\rm{LSP}}\\sim 1 $ TeV if Wino NLSPs are lighter than about 3.2 TeV. The $3\\ell$ search usually offers the highest mass reach, which varies in the range of (2-4) TeV depending on scenarios. In particular, scenarios with light Higgsinos have generically simplified parameter dependences. We also demonstrate that, at a 100 TeV collider, lepton collimation becomes a crucial issue for NLSPs heavier than about 2.5 TeV. We finally compare our results with the discovery prospects of gluino pair productions and deduce which SUSY breaking model can be discovered first by electroweakino searches.

Stefania Gori; Sunghoon Jung; Lian-Tao Wang; James D. Wells

2014-10-23T23:59:59.000Z

366

Studies on optoelectronic properties of DC reactive magnetron sputtered CdTe thin films  

SciTech Connect (OSTI)

Cadmium telluride continues to be a leading candidate for the development of cost effective photovoltaics for terrestrial applications. In the present work two individual metallic targets of Cd and Te were used for the deposition of CdTe thin films on mica substrates from room temperature to 300 °C by DC reactive magnetron sputtering method. XRD patterns of CdTe thin films deposited on mica substrates exhibit peaks at 2? = 27.7°, 46.1° and 54.6°, which corresponds to reflection on (1 1 1), (2 2 0) and (3 1 1) planes of CdTe cubic structure. The intensities of XRD patterns increases with the increase of substrate temperature upto 150 °C and then it decreases at higher substrate temperatures. The conductivity of CdTe thin films measured from four probe method increases with the increase of substrate temperature. The activation energies (?E) are found to be decrease with the increase of substrate temperature. The optical transmittance spectra of CdTe thin films deposited on mica have a clear interference pattern in the longer wavelength region. The films have good transparency (T > 85 %) exhibiting interference pattern in the spectral region between 1200 – 2500 nm. The optical band gap of CdTe thin films are found to be in the range of 1.48 – 1.57. The refractive index, n decreases with the increase of wavelength, ?. The value of n and k increases with the increase of substrate temperature.

Kumar, B. Rajesh, E-mail: rajphyind@gmail.com [Department of Physics, Sri Venkateswara University, Tirupati - 517 502, A.P, India and Department of Physics, Sri Krishnadevaraya University, Anantapur - 515 003, A.P (India); Hymavathi, B.; Rao, T. Subba [Department of Physics, Sri Krishnadevaraya University, Anantapur - 515 003, A.P (India)

2014-01-28T23:59:59.000Z

367

Simulation of relaxation times and energy spectra of the CdTe/Hg{sub 1-x}Cd{sub x}Te/CdTe quantum well for variable valence band offset, well width, and composition x  

SciTech Connect (OSTI)

The dependences of relaxation times and energy spectrum of the CdTe/Hg{sub 1-x}Cd{sub x}Te/CdTe quantum well (QW) on its parameters were simulated in the cadmium molar fraction range 0 < x < 0.16. It was found that the x increase from 0 to 0.16 changes electron wave function localization in the QW. A criterion for determining the number of interface levels of localized electrons depending on QW parameters was obtained. The effect of a sharp (by two orders of magnitude) increase in the relaxation time of localized electrons was detected at small QW widths and x close to 0.16.

Melezhik, E. O., E-mail: emelezhik@gmail.com; Gumenjuk-Sichevska, J. V.; Sizov, F. F. [National Academy of Sciences, Lashkariev Institute of Semiconductor Physics (Ukraine)

2010-10-15T23:59:59.000Z

368

Effect of low energy ion irradiation on CdTe crystals: Luminescence enhancement  

SciTech Connect (OSTI)

In this work we show that low energy ion sputtering is a very efficient technique as a cleaning process for CdTe substrates. We demonstrate, by using several techniques like grazing-angle x-ray diffraction, cathodoluminescence, microluminescence, and micro-Raman spectroscopy that the luminescent properties of CdTe substrates can be very much increased when CdTe surfaces are irradiated with low energy Argon ions. We postulate that this enhancement is mainly due to the removal of surface damage induced by the cutting and polishing processes. The formation of a low density of nonluminescent aggregates after the sputtering process has also been observed.

Olvera, J.; Plaza, J. L.; Dios, S. de; Dieguez, E. [Departamento de Fisica de Materiales, Laboratorio de Crecimiento de Cristales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Martinez, O.; Avella, M. [Departamento Fisica Materia Condensada, GdS-Optronlab Group, Universidad de Valladolid, Edificio I-D, Paseo de Belen 1, 47011 Valladolid (Spain)

2010-12-15T23:59:59.000Z

369

Chapter 1.19: Cadmium Telluride Photovoltaic Thin Film: CdTe  

SciTech Connect (OSTI)

The chapter reviews the history, development, and present processes used to fabricate thin-film, CdTe-based photovoltaic (PV) devices. It is intended for readers who are generally familiar with the operation and material aspects of PV devices but desire a deeper understanding of the process sequences used in CdTe PV technology. The discussion identifies why certain processes may have commercial production advantages and how the various process steps can interact with each other to affect device performance and reliability. The chapter concludes with a discussion of considerations of large-area CdTe PV deployment including issues related to material availability and energy-payback time.

Gessert, T. A.

2012-01-01T23:59:59.000Z

370

Search for Neutral Heavy Leptons in the NuTeV Experiment at Fermilab  

E-Print Network [OSTI]

Preliminary results from a search for neutral heavy leptons in the NuTeV experiment at Fermilab. The upgraded NuTeV neutrino detector for the 1996-1997 run included an instrumented decay region for the NHL search which, combined with the NuTeV calorimeter, allows detection in several decay modes (mu-mu-nu, mu-e-nu, mu-pi, e-pi, and e-e-nu). We see no evidence for neutral heavy leptons in our current search in the mass range from 0.3 GeV to 2.0 GeV decaying into final states containing a muon.

NuTeV Collaboration; R. B. Drucker

1998-11-23T23:59:59.000Z

371

Photoluminescence study of the substitution of Cd by Zn during the growth by atomic layer epitaxy of alternate CdSe and ZnSe monolayers  

SciTech Connect (OSTI)

We present a study of the substitution of Cd atoms by Zn atoms during the growth of alternate ZnSe and CdSe compound monolayers (ML) by atomic layer epitaxy (ALE) as a function of substrate temperature. Samples contained two quantum wells (QWs), each one made of alternate CdSe and ZnSe monolayers with total thickness of 12 ML but different growth parameters. The QWs were studied by low temperature photoluminescence (PL) spectroscopy. We show that the Cd content of underlying CdSe layers is affected by the exposure of the quantum well film to the Zn flux during the growth of ZnSe monolayers. The amount of Cd of the quantum well film decreases with higher exposures to the Zn flux. A brief discussion about the difficulties to grow the Zn{sub 0.5}Cd{sub 0.5}Se ordered alloy (CuAu-I type) by ALE is presented.

Hernández-Calderón, I. [Physics Department,Cinvestav, Ave. IPN2508, 07360, México City, DF. (Mexico); Salcedo-Reyes, J. C. [Thin Films Group, Physics Department, Pontificia Universidad Javeriana, Cr. 7 No. 43-82, Ed. 53, Lab. 404, Bogotá, D.C. (Colombia)

2014-05-15T23:59:59.000Z

372

T-641: Oracle Java SE Critical Patch Update Advisory - June 2011 |  

Broader source: Energy.gov (indexed) [DOE]

41: Oracle Java SE Critical Patch Update Advisory - June 2011 41: Oracle Java SE Critical Patch Update Advisory - June 2011 T-641: Oracle Java SE Critical Patch Update Advisory - June 2011 June 8, 2011 - 12:26pm Addthis PROBLEM: Oracle Java SE Critical Patch Update Advisory - June 2011 PLATFORM: JDK and JRE 6 Update 25 and earlier, Java SE, JDK 5.0 Update 29 and earlier Java SE, SDK 1.4.2_31 and earlier ABSTRACT: This Critical Patch Update contains 17 new security fixes for Oracle Java SE - 5 apply to client and server deployments of Java SE, 11 apply to client deployments of Java SE only, and 1 applies to server deployments of Java SE only. All of these vulnerabilities may be remotely exploitable without authentication, i.e., may be exploited over a network without the need for a username and password. Oracle CVSS scores assume that a user running a Java applet or Java Web

373

T-641: Oracle Java SE Critical Patch Update Advisory - June 2011 |  

Broader source: Energy.gov (indexed) [DOE]

1: Oracle Java SE Critical Patch Update Advisory - June 2011 1: Oracle Java SE Critical Patch Update Advisory - June 2011 T-641: Oracle Java SE Critical Patch Update Advisory - June 2011 June 8, 2011 - 12:26pm Addthis PROBLEM: Oracle Java SE Critical Patch Update Advisory - June 2011 PLATFORM: JDK and JRE 6 Update 25 and earlier, Java SE, JDK 5.0 Update 29 and earlier Java SE, SDK 1.4.2_31 and earlier ABSTRACT: This Critical Patch Update contains 17 new security fixes for Oracle Java SE - 5 apply to client and server deployments of Java SE, 11 apply to client deployments of Java SE only, and 1 applies to server deployments of Java SE only. All of these vulnerabilities may be remotely exploitable without authentication, i.e., may be exploited over a network without the need for a username and password. Oracle CVSS scores assume that a user running a Java applet or Java Web

374

The TE Wave Transmission Method for Electron Cloud Measurements at Cesr-TA  

E-Print Network [OSTI]

CLOUD MEASUREMENTS AT CESR-TA* S. De Santis # , J. Byrd,Wave measurements at the Cesr-TA ring at Cornell University.CBP-836 THE TE WAVE TRANSMISSION METHOD FOR

Desantis, S.

2010-01-01T23:59:59.000Z

375

Energy spectrum of cosmic ray muons above 10 TeV according to BUST data  

Science Journals Connector (OSTI)

The energy spectrum of cosmic ray muons in the range of several TeV to ... obtained through the analysis of multiple interactions of muons (the pair meter technique) in the ... are compared with prior BUST data o...

A. G. Bogdanov; R. P. Kokoulin…

2011-03-01T23:59:59.000Z

376

TeV scale left-right symmetry with spontaneous D-parity breaking  

SciTech Connect (OSTI)

The different scenarios of spontaneous breaking of D parity have been studied in both the nonsupersymmetric and the supersymmetric version of the left-right symmetric models (LRSM). We explore the possibility of a TeV scale SU(2){sub R} breaking scale M{sub R} and hence TeV scale right-handed neutrinos from both minimization of the scalar potential as well as the coupling constant unification point of view. We show that, although minimization of the scalar potential allows the possibility of a TeV scale M{sub R} and tiny neutrino masses in LRSM with spontaneous D-parity breaking, the gauge coupling unification at a high scale {approx}10{sup 16} GeV does not favor a TeV scale symmetry breaking except in the supersymmetric left-right model with Higgs doublet and bidoublet. The phenomenology of neutrino mass is also discussed.

Borah, Debasish [Indian Institute of Technology Bombay, Mumbai-400076 (India); Patra, Sudhanwa; Sarkar, Utpal [Physical Research Laboratory, Ahmedabad-380009 (India)

2011-02-01T23:59:59.000Z

377

Molybdenum Nitride Films in the Back Contact Structure of Flexible Substrate CdTe Solar Cells.  

E-Print Network [OSTI]

??CdTe solar cells in the superstrate configuration have achieved record efficiencies of 16% but those in the substrate configuration have reached efficiencies of only 7.8%.… (more)

Guntur, Vasudha

2011-01-01T23:59:59.000Z

378

Optical properties of single ZnTe nanowires grown at low temperature  

SciTech Connect (OSTI)

Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature (350 °C) under Te rich conditions, and at ultra-low density (from 1 to 5 nanowires per ?m{sup 2}). The crystalline structure is zinc blende as identified by transmission electron microscopy. All nanowires are tapered and the majority of them are <111> oriented. Low temperature micro-photoluminescence and cathodoluminescence experiments have been performed on single nanowires. We observe a narrow emission line with a blue-shift of 2 or 3 meV with respect to the exciton energy in bulk ZnTe. This shift is attributed to the strain induced by a 5 nm-thick oxide layer covering the nanowires, and this assumption is supported by a quantitative estimation of the strain in the nanowires.

Artioli, A.; Stepanov, P.; Den Hertog, M.; Bougerol, C.; Genuist, Y.; Donatini, F.; André, R.; Nogues, G.; Tatarenko, S.; Ferrand, D.; Cibert, J. [Inst NEEL, Universiy of Grenoble Alpes, F-38042 Grenoble (France) [Inst NEEL, Universiy of Grenoble Alpes, F-38042 Grenoble (France); Inst NEEL, CNRS, F-38042 Grenoble (France); Rueda-Fonseca, P. [Inst NEEL, Universiy of Grenoble Alpes, F-38042 Grenoble (France) [Inst NEEL, Universiy of Grenoble Alpes, F-38042 Grenoble (France); Inst NEEL, CNRS, F-38042 Grenoble (France); INAC, CEA and Université de Grenoble, 17 rue des Martyrs, 38054 Grenoble (France); Bellet-Amalric, E.; Kheng, K. [INAC, CEA and Université de Grenoble, 17 rue des Martyrs, 38054 Grenoble (France)] [INAC, CEA and Université de Grenoble, 17 rue des Martyrs, 38054 Grenoble (France)

2013-11-25T23:59:59.000Z

379

UNIVERSITY OF CALIFORNIA, TeV Energy Spectra of the Crab Nebula, Mrk 421 and  

E-Print Network [OSTI]

UNIVERSITY OF CALIFORNIA, IRVINE TeV Energy Spectra of the Crab Nebula, Mrk 421 and the Cygnus . . . . . . . . . . . . . . . . . . . . 2 i Cosmic Rays . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ii The Search for the Origin with Milagro . . . . . . . . . . . . . . . . . . . . . 69 IVThe Milagro Energy Reconstruction Algorithm 73 I

California at Santa Cruz, University of

380

V-183: Cisco TelePresence TC and TE Bugs Let Remote Users Deny...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Cisco TelePresence Profiles Series running Cisco TelePresence Quick Set Series Cisco IP Video Phone E20 ABSTRACT: Cisco TelePresence TC and TE Software contain two vulnerabilities...

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Collimation and Radiative Deceleration of Jets in TeV AGNs  

E-Print Network [OSTI]

We consider some implications of the rapid X-ray and TeV variability observed in M87 and the TeV blazars. We outline a model for jet focusing and demonstrate that modest radiative cooling can lead to recollimation of a relativistic jet in a nozzle having a very small cross-sectional radius. Such a configuration can produce rapid variability at large distances from the central engine and may explain recent observations of the HST-1 knot in M87. Possible applications of this model to TeV blazars are discussed. We also discuss a scenario for the very rapid TeV flares observed with HESS and MAGIC in some blazars, that accommodates the relatively small Doppler factors inferred from radio observations.

Amir Levinson; Omer Bromberg

2007-12-17T23:59:59.000Z

382

p-CdTe/n-CdS photovoltaic cells in the substrate configuration.  

E-Print Network [OSTI]

??In this thesis, p-CdTe/n-CdS solar cells in the substrate configuration have been studied. The focus is on device fabrication, performance optimization, and the development of… (more)

Wu, Hsiang Ning (1984 - )

2014-01-01T23:59:59.000Z

383

Development of high efficieny CdTe thin-film solar cell.  

E-Print Network [OSTI]

??CdTe films were deposited by sputtering technique and were then carried out by CdCl2 treatment. The SEM micrographs show that the grain sizes of the… (more)

Huang, Yein-rein

2011-01-01T23:59:59.000Z

384

Stability Issues in Sputtered CdS/CdTe Solar Cells.  

E-Print Network [OSTI]

?? Magnetron sputtering is a well-established thin-film deposition technique which is particularly well-suited for sub-micron layers. We use this method to deposit ultra-thin CdS/CdTe layers… (more)

Paudel, Naba Raj

2011-01-01T23:59:59.000Z

385

Development of CdTe thin film solar cells on flexible foil substrates.  

E-Print Network [OSTI]

??Cadmium telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal band gap of 1.45 eV, its high optical absorption… (more)

Hodges, Deidra Ranel

2009-01-01T23:59:59.000Z

386

CdTe/CdS Thin Film Solar Cells Fabricated on Flexible Substrates.  

E-Print Network [OSTI]

??Cadmium Telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal bandgap of 1.45 eV and its high optical absorption… (more)

Palekis, Vasilios

2011-01-01T23:59:59.000Z

387

Photoluminescence and Extended X-ray Absorption Fine Structure Studies on CdTe Material.  

E-Print Network [OSTI]

??The direct-band-gap semiconductor CdTe is an important material for fabricating high efficiency, polycrystalline thin-film solar cells in a heterojunction configuration. The outstanding physical properties of… (more)

Liu, Xiangxin

2006-01-01T23:59:59.000Z

388

Electron-reflector strategy for CdTe thin-film solar cells.  

E-Print Network [OSTI]

??The CdTe thin-film solar cell has a large absorption coefficient and high theoretical efficiency. Moreover, large-area photovoltaic panels can be economically fabricated. These features potentially… (more)

Hsiao, Kuo-Jui

2010-01-01T23:59:59.000Z

389

Approaches to fabricating high-efficiency ultra-thin CdTe solar cells.  

E-Print Network [OSTI]

??This thesis is an investigation of the fabrication, characterization and performance of high-efficiency and ultra-thin CdTe solar cells with an aim of reducing the material… (more)

Xia, Wei (1981 - )

2013-01-01T23:59:59.000Z

390

Room temperature ferromagnetism in Co defused CdTe nanocrystalline thin films  

SciTech Connect (OSTI)

Nanocrystalline Co defused CdTe thin films were prepared using electron beam evaporation technique by depositing CdTe/Co/CdTe stacked layers with different Co thickness onto glass substrate at 373 K followed by annealing at 573K for 2 hrs. Structural, morphological and magnetic properties of of all the Co defused CdTe thin films has been investigated. XRD pattern of all the films exhibited zinc blende structure with <111> preferential orientation without changing the crystal structure of the films. The grain size of the films increased from 31.5 nm to 48.1 nm with the increase of Co layer thickness from 25nm to 100nm. The morphological studies showed that uniform texture of the films and the presence of Co was confirmed by EDAX. Room temperature magnetization curves indicated an improved ferromagnetic behavior in the films with increase of the Co thickness.

Rao, N. Madhusudhana; Kaleemulla, S.; Begam, M. Rigana [Materials Physics Division, School of Advanced Sciences, VIT University, Vellore - 632 014 (India)

2014-04-24T23:59:59.000Z

391

Shunt Passivation Process for CdTe Solar Cell - New Post Deposition Technique.  

E-Print Network [OSTI]

?? A cadmium sulfide / cadmium telluride (CdS/CdTe) solar cell consists of thedevice stack: Glass substrate / SnO2:F (TCO, transparent conductive oxide) / CdS (n-type… (more)

Tessema, Misle Mesfin

2009-01-01T23:59:59.000Z

392

Effect of Cu doping on Hole Mobility in CdTe  

SciTech Connect (OSTI)

High quality CdTe thin films grown by laser deposition technique and heavily doped with Cu have recently been reported to have resistivity and hole mobility comparable to those of bulk single crystals. To explain the experimental results we have calculated the effect of Cu on the band structure and phonon spectrum of CdTe using the density functional theory (DFT) and the linearized augmented plane wave (LAPW) method. We found that the introduction of a high density of Cu can lead to a reduction in the hole-LO phonon scattering. In addition, Cu doping can remove Cd vacancies in CdTe and thereby enhance the hole mobility in CdTe.

Ma Zhixun; Mao, Samuel S. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Liu Lei; Yu, Peter Y. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Department of Physics, University of California at Berkeley, Berkeley, CA 94720 (United States)

2010-01-04T23:59:59.000Z

393

Efficiency, Cost and Weight Trade-off in TE Power Generation System for Vehicle Exhaust Applications  

Broader source: Energy.gov [DOE]

It contains a detailed co-optimization of the thermoelectric module with the heat sink and a study of the tradeoff between the material cost and efficiency for the TE module and the heat sink. An optimum design is found.

394

The tin impurity in Bi0.5Sb1.5Te3 alloys  

Broader source: Energy.gov [DOE]

Extends work on tin to p-type thermoelectric alloys of formula Bi(2-x)Sb(x)Te(3) doped with Sn. Both single crystals and polycrystals prepared using powder metallurgical techniques are studied and properties reported.

395

TeC: end-user development of software systems for smart spaces  

Science Journals Connector (OSTI)

This paper presents TeC, a framework for end-user design, deployment, and evolution of applications for smart spaces. This work is motivated by the current gap between traditional software development approaches and end user desire to easily personalise and evolve their systems for smart spaces. TeC is precise enough to support the fully automated deployment of systems designed by end users, and it addresses important characteristics of ubiquitous computing, namely, the ability to describe dynamic adaptations and to relate system features to physical location and to the presence and identity of users. TeC is described by example, with four home automation systems concerning surveillance and energy management. The paper also discusses the implementation of the TeC middleware and preliminary evaluation concerning usability and engineering effort.

João P. Sousa; Daniel Keathley; Mong Le; Luan Pham; Daniel Ryan; Sneha Rohira; Samuel Tryon; Sheri Williamson

2011-01-01T23:59:59.000Z

396

Combined SIMS, AES and XPS Study of CdxHg1-xTe  

Science Journals Connector (OSTI)

The ternary compound CdxHg1_xTe is of great importance in infrared technology. The band gap of this material depends critically on the concentration x. Therefore, a detailed knowledge of the surface and bulk comp...

O. Ganschow; H. M. Nitz; L. Wiedmann…

1979-01-01T23:59:59.000Z

397

Aqueous Synthesis of Zinc Blende CdTe/CdS Magic-Core/Thick-Shell...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

CdTeCdS Magic-CoreThick-Shell Tetrahedral Shaped Nanocrystals with Emission Tunable to Near-Infrared Authors: Deng, Z., Schulz, O., Lin, S., Ding, B., Liu, X., Wei, X., Ros, R.,...

398

First results on neutrinoless double beta decay of Te-130 with the calorimetric cuoricino experiment  

E-Print Network [OSTI]

Evidence for Neutrinoless Double Beta Decay” arXiv:hep-on “Evidence for neutrinoless double beta decay”- arXiv:hep-Results on Neutrinoless Double Beta Decay of 130 Te with the

2003-01-01T23:59:59.000Z

399

Surveying The TeV Sky With Milagro G. P. Walker for the Milagro Collaboration  

E-Print Network [OSTI]

Surveying The TeV Sky With Milagro G. P. Walker for the Milagro Collaboration Los Alamos National been reported by the Milagro collaboration [5]. In this analysis, the emission is resolved into regions

California at Santa Cruz, University of

400

Synthesis, characterization and performance of Cd1xInxTe compound for solar cell applications  

E-Print Network [OSTI]

), Tebbin, P.O. Box 87 Helwan, Cairo 11412, Egypt b Department of Physics, University of Central Florida­vis­NIR spectrophotometer and band gap energy of 1.37 eV for Cd0.6In0.4Te was obtained. The best photovoltaic conversion efficiency of 1.89% was obtained for the Cd0.6In0.4Te sample with a short circuit current density (Jsc) of 15

Chow, Lee

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Simultaneous TE{sub 1} and TE{sub 2} mode lasing yielding dual-wavelength oscillation in a semiconductor laser with a tunnel junction  

SciTech Connect (OSTI)

Dual-frequency oscillation is obtained and investigated in a new type of injection heterolaser, an interband two-stage cascade laser with a tunneling p-n junction separating two active regions with quantum wells located in a common waveguide. The laser design provides for simultaneous oscillation at the first-order TE mode of wavelength {lambda} = 1.086 {mu}m and the second-order TE mode of wavelength {lambda} = 0.96 {mu}m in the continuous-wave regime at room temperature.

Aleshkin, V. Ya., E-mail: aleshkin@ipm.sci.nnov.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Babushkina, T. S.; Birykov, A. A. [Nizhni Novgorod State University, Physicotechnical Institute (Russian Federation); Dubinov, A. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N.; Kolesnikov, M. N.; Nekorkin, S. M. [Nizhni Novgorod State University, Physicotechnical Institute (Russian Federation)

2011-05-15T23:59:59.000Z

402

CATHODOLUMINESCENCE STUDIES OF THE 1.4 eV BANDS IN CdTe (*) C. B. NORRIS and C. E. BARNES  

E-Print Network [OSTI]

219 CATHODOLUMINESCENCE STUDIES OF THE 1.4 eV BANDS IN CdTe (*) C. B. NORRIS and C. E. BARNESV luminescence bands in nominally undoped, nominally stoichiometric CdTe and in donor-compensated, Te-rich CdTe.4 eV transitions in CdTe arose from the fact that this transition is of a more complex nature than

Paris-Sud XI, Université de

403

Optical Stark Effect and Dressed Exciton States in a Mn-Doped CdTe Quantum Dot C. Le Gall,1  

E-Print Network [OSTI]

Optical Stark Effect and Dressed Exciton States in a Mn-Doped CdTe Quantum Dot C. Le Gall,1 A spin in a CdTe QD, like the strain- induced magnetic anisotropy or hyperfine coupling to the nuclei in this study is grown on a ZnTe substrate and contains CdTe QDs. A 6.5 monolayer thick CdTe layer is deposited

Boyer, Edmond

404

DISCOVERY OF A NEW TeV GAMMA-RAY SOURCE: VER J0521+211  

SciTech Connect (OSTI)

We report the detection of a new TeV gamma-ray source, VER J0521+211, based on observations made with the VERITAS imaging atmospheric Cherenkov Telescope Array. These observations were motivated by the discovery of a cluster of >30 GeV photons in the first year of Fermi Large Area Telescope observations. VER J0521+211 is relatively bright at TeV energies, with a mean photon flux of (1.93 ± 0.13{sub stat} ± 0.78{sub sys}) × 10{sup –11} cm{sup –2} s{sup –1} above 0.2 TeV during the period of the VERITAS observations. The source is strongly variable on a daily timescale across all wavebands, from optical to TeV, with a peak flux corresponding to ?0.3 times the steady Crab Nebula flux at TeV energies. Follow-up observations in the optical and X-ray bands classify the newly discovered TeV source as a BL Lac-type blazar with uncertain redshift, although recent measurements suggest z = 0.108. VER J0521+211 exhibits all the defining properties of blazars in radio, optical, X-ray, and gamma-ray wavelengths.

Archambault, S. [Physics Department, McGill University, Montreal, QC H3A 2T8 (Canada); Arlen, T.; Aune, T. [Department of Physics and Astronomy, University of California, Los Angeles, CA 90095 (United States); Behera, B.; Federici, S. [DESY, Platanenallee 6, D-15738 Zeuthen (Germany); Beilicke, M.; Buckley, J. H.; Bugaev, V. [Department of Physics, Washington University, St. Louis, MO 63130 (United States); Benbow, W. [Fred Lawrence Whipple Observatory, Harvard-Smithsonian Center for Astrophysics, Amado, AZ 85645 (United States); Bird, R. [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Bouvier, A. [Santa Cruz Institute for Particle Physics and Department of Physics, University of California, Santa Cruz, CA 95064 (United States); Byrum, K. [Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439 (United States); Cesarini, A.; Connolly, M. P. [School of Physics, National University of Ireland Galway, University Road, Galway (Ireland); Ciupik, L. [Astronomy Department, Adler Planetarium and Astronomy Museum, Chicago, IL 60605 (United States); Cui, W.; Feng, Q.; Finley, J. P. [Department of Physics, Purdue University, West Lafayette, IN 47907 (United States); Errando, M. [Department of Physics and Astronomy, Barnard College, Columbia University, NY 10027 (United States); Falcone, A., E-mail: fortin@veritas.sao.arizona.edu, E-mail: errando@astro.columbia.edu, E-mail: jholder@physics.udel.edu, E-mail: sfegan@llr.in2p3.fr [Department of Astronomy and Astrophysics, 525 Davey Lab, Pennsylvania State University, University Park, PA 16802 (United States); Collaboration: VERITAS Collaboration; and others

2013-10-20T23:59:59.000Z

405

X-ray Studies of Unidentified Galactic TeV Gamma-ray Sources  

SciTech Connect (OSTI)

Many of the recently discovered Galactic TeV sources remain unidentified to date. A large fraction of the sources is possibly associated with relic pulsar wind nebula (PWN) systems. One key question here is the maximum energy (beyond TeV) attained in the compact PWNe. Hard X-ray emission can trace those particles, but current non-focussing X-ray instruments above 10 keV have difficulties to deconvolve the hard pulsar spectrum from its surrounding nebula.Some of the new TeV sources are also expected to originate from middle-aged and possibly even from old supernova remnants (SNR). But no compelling case for such an identification has been found yet. In established young TeV-emitting SNRs, X-ray imaging above 10 keV could help to disentangle the leptonic from the hadronic emission component in the TeV shells, if secondary electrons produced in hadronic collisions can be effectively detected. As SNRs get older, the high energy electron component is expected to fade away. This may allow to verify the picture through X-ray spectral evolution of the source population.Starting from the lessons we have learned so far from X-ray follow-up observations of unidentified TeV sources, prospects for Simbol-X to resolve open questions in this field will be discussed.

Puehlhofer, Gerd [Institut fuer Astronomie und Astrophysik, Sand 1, 72076 Tuebingen (Germany)

2009-05-11T23:59:59.000Z

406

Abundance determinations in HII regions: model fitting versus Te-method  

E-Print Network [OSTI]

The discrepancy between the oxygen abundances in high-metallicity HII regions determined through the Te-method (and/or through the corresponding "strong lines - oxygen abundance" calibration) and that determined through the model fitting (and/or through the corresponding "strong lines - oxygen abundance" calibration) is discussed. It is suggested to use the interstellar oxygen abundance in the solar vicinity, derived with very high precision from the high-resolution observations of the weak interstellar absorption lines towards the stars, as a "Rosetta stone" to verify the validity of the oxygen abundances derived in HII regions with the Te-method at high abundances. The agreement between the value of the oxygen abundance at the solar galactocentric distance traced by the abundances derived in HII regions through the Te-method and that derived from the interstellar absorption lines towards the stars is strong evidence in favor of that i) the two-zone model for Te seems to be a realistic interpretation of the temperature structure within HII regions, and ii) the classic Te-method provides accurate oxygen abundances in HII regions. It has been concluded that the "strong lines - oxygen abundance" calibrations must be based on the HII regions with the oxygen abundances derived with the Te-method but not on the existing grids of the models for HII regions.

L. S. Pilyugin

2002-11-14T23:59:59.000Z

407

Enhanced thermoelectric performance in Cd doped CuInTe{sub 2} compounds  

SciTech Connect (OSTI)

CuIn{sub 1?x}Cd{sub x}Te{sub 2} materials (x?=?0, 0.02, 0.05, and 0.1) are prepared using melting-annealing method and the highly densified bulk samples are obtained through Spark Plasma Sintering. The X-ray diffraction data confirm that nearly pure chalcopyrite structures are obtained in all the samples. Due to the substitution of Cd at In sites, the carrier concentration is greatly increased, leading to much enhanced electrical conductivity and power factor. The single parabolic band model is used to describe the electrical transport properties of CuInTe{sub 2} and the low temperature Hall mobility is also modeled. By combing theoretical model and experiment data, the optimum carrier concentration in CuInTe{sub 2} is proposed to explain the greatly enhanced power factors in the Cd doped CuInTe{sub 2}. In addition, the thermal conductivity is reduced by extra phonon scattering due to the atomic mass and radius fluctuations between Cd and In atoms. The maximum zTs are observed in CuIn{sub 0.98}Cd{sub 0.02}Te{sub 2} and CuIn{sub 0.9}Cd{sub 0.1}Te{sub 2} samples, which are improved by over 100% at room temperature and around 20% at 600?K.

Cheng, N. [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049 (China); Liu, R. [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Bai, S. [CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Shi, X., E-mail: xshi@mail.sic.ac.cn; Chen, L. [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)

2014-04-28T23:59:59.000Z

408

Strong lensing probability in TeVeS theory  

E-Print Network [OSTI]

We recalculate the strong lensing probability as a function of the image separation in TeVeS (tensor-vector-scalar) cosmology, which is a relativistic version of MOND (MOdified Newtonian Dynamics). The lens is modeled by the Hernquist profile. We assume an open cosmology with $\\Omega_b=0.04$ and $\\Omega_\\Lambda=0.5$ and three different kinds of interpolating functions. Two different galaxy stellar mass functions (GSMF) are adopted: PHJ (Panter-Heavens-Jimenez, 2004) determined from SDSS data release one and Fontana (Fontana et al., 2006) from GOODS-MUSIC catalog. We compare our results with both the predicted probabilities for lenses by Singular Isothermal Sphere (SIS) galaxy halos in LCDM (lambda cold dark matter) with Schechter-fit velocity function, and the observational results of the well defined combined sample of Cosmic Lens All-Sky Survey (CLASS) and Jodrell Bank/Very Large Array Astrometric Survey (JVAS). It turns out that the interpolating function $\\mu(x)=x/(1+x)$ combined with Fontana GSMF matches the results from CLASS/JVAS quite well.

Da-Ming Chen

2007-12-11T23:59:59.000Z

409

DEVELOPMENT OF CdZnTe RADIATION DETECTORS  

SciTech Connect (OSTI)

Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconductor detectors because of its wide band-gap and high atomic number. Despite these advantages, CZT still presents some material limitations and poor hole mobility. In the past decade most of the developing CZT detectors focused on designing different electrode configurations, mainly to minimize the deleterious effect due to the poor hole mobility. A few different electrode geometries were designed and fabricated, such as pixelated anodes and Frisch-grid detectors developed at Brookhaven National Lab (BNL). However, crystal defects in CZT materials still limit the yield of detector-grade crystals, and, in general, dominate the detector's performance. In the past few years, our group's research extended to characterizing the CZT materials at the micro-scale, and to correlating crystal defects with the detector's performance. We built a set of unique tools for this purpose, including infrared (IR) transmission microscopy, X-ray micro-scale mapping using synchrotron light source, X-ray transmission- and reflection-topography, current deep level transient spectroscopy (I-DLTS), and photoluminescence measurements. Our most recent work on CZT detectors was directed towards detailing various crystal defects, studying the internal electrical field, and delineating the effects of thermal annealing on improving the material properties. In this paper, we report our most recent results.

BOLOTNIKOV, A.; CAMARDA, G.; HOSSAIN, A.; KIM, K.H.; YANG, G.; GUL, R.; CUI, Y.; AND JAMES, R.B.

2011-10-23T23:59:59.000Z

410

Note on XMM-Newton observations of the first unidentified TeV gamma-ray source TeV J2032+4130 by Horns et al. astro-ph/0705.0009  

E-Print Network [OSTI]

I comment on the -- apparent -- diffuse X-ray emission reported by Horns et al. in their XMM observations of TeV J2032+4130

Yousaf Butt

2007-05-02T23:59:59.000Z

411

Secretary Chu to Lead Delegation to SE4All, CEM Conferences in London |  

Broader source: Energy.gov (indexed) [DOE]

SE4All, CEM Conferences in SE4All, CEM Conferences in London Secretary Chu to Lead Delegation to SE4All, CEM Conferences in London April 9, 2012 - 10:13am Addthis WASHINGTON, DC - Later this month, U.S. Energy Secretary Steven Chu will join Energy Ministers from the world's leading economies in London for the UN Sustainable Energy for All (SE4All) conference and the Clean Energy Ministerial (CEM3). CEM3 and SE4All will hold a joint press conference on April 26, 2012, to announce outcomes from the ministerial and release the SE4All Action Agenda. The High Level Group of SE4All will work to accelerate progress on critical clean energy priorities. SE4All's objectives are to double the global rate of improvement in energy efficiency, double the share of renewable energy in the global energy mix, and ensure universal access to modern

412

Secretary Chu to Lead Delegation to SE4All, CEM Conferences in London |  

Broader source: Energy.gov (indexed) [DOE]

Secretary Chu to Lead Delegation to SE4All, CEM Conferences in Secretary Chu to Lead Delegation to SE4All, CEM Conferences in London Secretary Chu to Lead Delegation to SE4All, CEM Conferences in London April 9, 2012 - 10:13am Addthis WASHINGTON, DC - Later this month, U.S. Energy Secretary Steven Chu will join Energy Ministers from the world's leading economies in London for the UN Sustainable Energy for All (SE4All) conference and the Clean Energy Ministerial (CEM3). CEM3 and SE4All will hold a joint press conference on April 26, 2012, to announce outcomes from the ministerial and release the SE4All Action Agenda. The High Level Group of SE4All will work to accelerate progress on critical clean energy priorities. SE4All's objectives are to double the global rate of improvement in energy efficiency, double the share of renewable

413

E-Print Network 3.0 - atuba se brasil Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

se brasil Search Powered by Explorit Topic List Advanced Search Sample search results for: atuba se brasil Page: << < 1 2 3 4 5 > >> 1 CROCODYLOMORPH EGGS AND EGGSHELLS FROM THE...

414

E-Print Network 3.0 - amor se encontram Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

I j encontra-se plantada... intervalo I 0; 4 2; 1; 6 26; R 2 . A horta encontra-se sub-dividida em quatro rectangulos mais... 26; R 2 de12;nido por E ...

415

E-Print Network 3.0 - altdorf se germany Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

altdorf se germany Search Powered by Explorit Topic List Advanced Search Sample search results for: altdorf se germany Page: << < 1 2 3 4 5 > >> 1 195Schweiz. Z.Forstwes. 156...

416

T-558: Oracle Java SE and Java for Business Critical Patch Update...  

Broader source: Energy.gov (indexed) [DOE]

58: Oracle Java SE and Java for Business Critical Patch Update Advisory - February 2011 T-558: Oracle Java SE and Java for Business Critical Patch Update Advisory - February 2011...

417

DISCOVERY OF TeV GAMMA-RAY EMISSION FROM CTA 1 BY VERITAS  

SciTech Connect (OSTI)

We report the discovery of TeV gamma-ray emission coincident with the shell-type radio supernova remnant (SNR) CTA 1 using the VERITAS gamma-ray observatory. The source, VER J0006+729, was detected as a 6.5 standard deviation excess over background and shows an extended morphology, approximated by a two-dimensional Gaussian of semimajor (semiminor) axis 0. Degree-Sign 30 (0. Degree-Sign 24) and a centroid 5' from the Fermi gamma-ray pulsar PSR J0007+7303 and its X-ray pulsar wind nebula (PWN). The photon spectrum is well described by a power-law dN/dE = N {sub 0}(E/3 TeV){sup -{Gamma}}, with a differential spectral index of {Gamma} = 2.2 {+-} 0.2{sub stat} {+-} 0.3{sub sys}, and normalization N {sub 0} = (9.1 {+-} 1.3{sub stat} {+-} 1.7{sub sys}) Multiplication-Sign 10{sup -14} cm{sup -2} s{sup -1} TeV{sup -1}. The integral flux, F {sub {gamma}} = 4.0 Multiplication-Sign 10{sup -12} erg cm{sup -2} s{sup -1} above 1 TeV, corresponds to 0.2% of the pulsar spin-down power at 1.4 kpc. The energetics, colocation with the SNR, and the relatively small extent of the TeV emission strongly argue for the PWN origin of the TeV photons. We consider the origin of the TeV emission in CTA 1.

Aliu, E.; Errando, M. [Department of Physics and Astronomy, Barnard College, Columbia University, NY 10027 (United States)] [Department of Physics and Astronomy, Barnard College, Columbia University, NY 10027 (United States); Archambault, S. [Physics Department, McGill University, Montreal, QC H3A 2T8 (Canada)] [Physics Department, McGill University, Montreal, QC H3A 2T8 (Canada); Arlen, T. [Department of Physics and Astronomy, University of California, Los Angeles, CA 90095 (United States)] [Department of Physics and Astronomy, University of California, Los Angeles, CA 90095 (United States); Aune, T.; Bouvier, A. [Santa Cruz Institute for Particle Physics and Department of Physics, University of California, Santa Cruz, CA 95064 (United States)] [Santa Cruz Institute for Particle Physics and Department of Physics, University of California, Santa Cruz, CA 95064 (United States); Beilicke, M.; Buckley, J. H.; Bugaev, V.; Dickherber, R. [Department of Physics, Washington University, St. Louis, MO 63130 (United States)] [Department of Physics, Washington University, St. Louis, MO 63130 (United States); Benbow, W. [Fred Lawrence Whipple Observatory, Harvard-Smithsonian Center for Astrophysics, Amado, AZ 85645 (United States)] [Fred Lawrence Whipple Observatory, Harvard-Smithsonian Center for Astrophysics, Amado, AZ 85645 (United States); Cesarini, A.; Connolly, M. P. [School of Physics, National University of Ireland Galway, University Road, Galway (Ireland)] [School of Physics, National University of Ireland Galway, University Road, Galway (Ireland); Ciupik, L. [Astronomy Department, Adler Planetarium and Astronomy Museum, Chicago, IL 60605 (United States)] [Astronomy Department, Adler Planetarium and Astronomy Museum, Chicago, IL 60605 (United States); Collins-Hughes, E. [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland)] [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Cui, W. [Department of Physics, Purdue University, West Lafayette, IN 47907 (United States)] [Department of Physics, Purdue University, West Lafayette, IN 47907 (United States); Duke, C. [Department of Physics, Grinnell College, Grinnell, IA 50112-1690 (United States)] [Department of Physics, Grinnell College, Grinnell, IA 50112-1690 (United States); Dumm, J. [School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455 (United States)] [School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455 (United States); Dwarkadas, V. V. [Department of Astronomy and Astrophysics, University of Chicago, Chicago, IL 60637 (United States)] [Department of Astronomy and Astrophysics, University of Chicago, Chicago, IL 60637 (United States); Falcone, A., E-mail: muk@astro.columbia.edu, E-mail: smcarthur@ulysses.uchicago.edu [Department of Astronomy and Astrophysics, 525 Davey Lab, Pennsylvania State University, University Park, PA 16802 (United States); and others

2013-02-10T23:59:59.000Z

418

Key experimental information on intermediate-range atomic structures in amorphous Ge2Sb2Te5 phase change material  

E-Print Network [OSTI]

.1063/1.3657139 Nature of phase transitions in crystalline and amorphous GeTe-Sb2Te3 phase change materials J. Chem. Phys on intermediate-range atomic structures in amorphous Ge2Sb2Te5 phase change material Shinya Hosokawa,1,2,a) Wolf change material Shinya Hosokawa, Wolf-Christian Pilgrim, Astrid Höhle, Daniel Szubrin, Nathalie Boudet

Paris-Sud XI, Université de

419

X-RAY ESCAPE PEAK VARIATIONS IN DIODES MADE FROM DOUBLY TRAVELLING SOLVENT GROWN p-TYPE CdTe  

E-Print Network [OSTI]

293 X-RAY ESCAPE PEAK VARIATIONS IN DIODES MADE FROM DOUBLY TRAVELLING SOLVENT GROWN p-TYPE CdTe H On a étudié la variation de l'intensité du pic d'échappement d'un compteur CdTe en fonction de la tension de height on the applied diode voltage was measured at diodes made from doubly travelling solvent grown CdTe

Paris-Sud XI, Université de

420

COMPARATIVE STUDY OF CdTe AND GaAs PHOTOREFRACTIVE PERFORMANCES FROM 1m TO 1.55m  

E-Print Network [OSTI]

1 COMPARATIVE STUDY OF CdTe AND GaAs PHOTOREFRACTIVE PERFORMANCES FROM 1µm TO 1.55µm L.A. de CdTe at different wavelengths from 1.06µm to 1.55µm. The sensitivity and performances of different for the extension of the photorefractive effect towards the wavelength region of 1.3-1.5µm. CdTe appears

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Growth of CdTe Films on Amorphous Substrates Using CaF2 Nanorods as a Buffer Layer  

E-Print Network [OSTI]

Growth of CdTe Films on Amorphous Substrates Using CaF2 Nanorods as a Buffer Layer NICHOLAS LICAUSI biaxially textured CdTe films were grown on biaxial CaF2 buffer layers. The CaF2 nanorods were grown by oblique angle vapor deposition and possessed a {111}h121i biaxial texture. The CdTe film was deposited

Wang, Gwo-Ching

422

REVIEW OF CdTe MEDICAL APPLICATIONS Radiation Monitoring Devices, Inc. 44 Hunt St., Watertown, Massachusetts 02172, U. S. A.  

E-Print Network [OSTI]

REVIEW OF CdTe MEDICAL APPLICATIONS G. ENTINE Radiation Monitoring Devices, Inc. 44 Hunt St place de dents synthé- tiques. Par ailleurs, les détecteurs CdTe ont été utilisés pour le diagnostic d développer des photo- conducteurs X à base de CdTe pour les tomo-densitomètres ; toutefois, des progrès

Paris-Sud XI, Université de

423

Epitaxial growth of CdTe oriented thin films, infrared characterization and possible applications to photo-voltaic cells  

E-Print Network [OSTI]

573 Epitaxial growth of CdTe oriented thin films, infrared characterization and possible décembre 1979, accepté le 12 décembre 1979) Résumé. 2014 Des films minces orientés de CdTe, d de CdTe cubique dont la face (111), polie mécaniquement et décapée chimiquement, est préalablement

Paris-Sud XI, Université de

424

CONTRIBUTION TO THE DETERMINATION OF DEEP TRAPPING LEVELS IN HIGH RESISTIVITY FILMS OF n-TYPE CdTe  

E-Print Network [OSTI]

-TYPE CdTe C. LHERMITTE, D. CARLES and C. VAUTIER Laboratoire de Physique des couches minces, Faculté des conduction à l'obscurité et de la photoconductivité des couches minces de CdTe de type n nous permet de and the photoconductivity of n-type CdTe films enables us to emphasize the existence of a distribution of traps located

Boyer, Edmond

425

The Roles of Cu Impurity States in CdTe Thin Film Solar Cells Ken K. Chin1  

E-Print Network [OSTI]

1 The Roles of Cu Impurity States in CdTe Thin Film Solar Cells Ken K. Chin1 , T.A. Gessert2 of Cu impurity inclusion in CdTe thin film solar cells, such as degradation caused by Cu diffusion , and Su-Huai Wei2 1 Department of Physics and Apollo CdTe Solar Energy Research Center, NJIT, Newark, NJ

426

Performance study of CdS/Co-Doped-CdSe quantum dot sensitized solar cells  

Science Journals Connector (OSTI)

In order to optimize the charge transfer path in quantum dot sensitized solar cells (QDSCs), we employed successive ionic layer adsorption and reaction method to dope CdSe with Co for fabricating CdS/Co-doped-CdSe QDSCs constructed with CdS/Co-doped-CdSe ...

Xiaoping Zou, Sheng He, Gongqing Teng, Chuan Zhao

2014-01-01T23:59:59.000Z

427

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells  

E-Print Network [OSTI]

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A. Rockettb , M. Edoffa , L. Stolta a A°ngstro¨m Solar Center, Uppsala University, P.O. Box 534, SE-751 21 Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been

Rockett, Angus

428

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

429

Aqueous synthesis and characterization of CdSe/ZnO core-shell nanoparticles  

Science Journals Connector (OSTI)

Core-shell nanomaterials based on CdSe as the core and ZnO as the shell were prepared using an aqueous route involving the use of Cd salt and NaBH4 in reaction with Se to generate CdSe in the presence of thioglycerol (TG) as a stabilizer. ...

B. P. Rakgalakane; M. J. Moloto

2011-01-01T23:59:59.000Z

430

A Search for a Light Charged Higgs Boson Decaying to cs at ?s = 7 TeV.  

E-Print Network [OSTI]

??A search for a light charged Higgs boson decaying into cs is presented using data recorded in pp collisions at ?s = 7 TeV. The… (more)

Martyniuk, Alex Christopher

2011-01-01T23:59:59.000Z

431

De herontwikkeling van het DSM terrein; naar een strategisch advies voor de ontwikkeling van het DSM terrein te Delft :.  

E-Print Network [OSTI]

??Het doel van het onderzoek is het traceren van het (bewust of onbewust) gevolgde strategisch proces voor de herontwikkeling van het DSM terrein te Delft,… (more)

Schellekens, F.P.

2013-01-01T23:59:59.000Z

432

Calcul de la variation de mobilit des lectrons dans PbTe type n entre 50 et 300 K  

E-Print Network [OSTI]

, Classification Physics Abstracts 72.20F 1. Introduction. Les chalcog6nures tel le tellurure de plomb (PbTe) sont

Paris-Sud XI, Université de

433

Exploring alternative symmetry breaking mechanisms at the LHC with 7, 8 and 10 TeV total energy  

E-Print Network [OSTI]

In view of the annnouncement that in 2012 the LHC will run at 8 TeV, we study the possibility of detecting signals of alternative mechanisms of ElectroWeak Symmetry Breaking, described phenomenologically by unitarized models, at energies lower than 14 TeV. A complete calculation with six fermions in the final state is performed using the PHANTOM event generator. Our results indicate that at 8 TeV some of the scenarios with TeV scale resonances are likely to be identified while models with no resonances or with very heavy ones will be inaccessible, unless the available luminosity will be much higher than expected.

Alessandro Ballestrero; Diogo Buarque Franzosi; Ezio Maina

2012-03-13T23:59:59.000Z

434

Polymorphic transformation in TlSe and the electrical properties of phases  

SciTech Connect (OSTI)

Alloys in the TlSe-Se system on the side of the TlSe compound in the phase diagram have been investigated using differential thermal, X-ray powder diffraction, and microstructural analyses. The phase diagram of the system has been constructed, and the temperature dependences of the electrical conductivity of the phases obtained have been examined. An analysis of the thermograms of alloys in the (TlSe){sub 0.96}-Se{sub 0.04} system has revealed a structural phase transition at a temperature of 470 {+-} 1 K. Investigations into the temperature dependences of the electrical conductivity in the range 120-450 K have demonstrated that the temperature dependence of the electrical conductivity for the (TlSe){sub 0.96}-Se{sub 0.04} alloy exhibits metallic behavior.

Najafov, A. I. [Azerbaijan National Academy of Sciences, Institute of Radiation Problems (Azerbaijan); Guseinov, G. G.; Alekperov, O. Z. [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan); Sardarly, R. M., E-mail: sardarli@yahoo.com; Abdullaev, A. P.; Eyubova, N. A. [Azerbaijan National Academy of Sciences, Institute of Radiation Problems (Azerbaijan)

2008-09-15T23:59:59.000Z

435

Abidjan, Côte d'Ivoire: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Abidjan, Côte d'Ivoire: Energy Resources Abidjan, Côte d'Ivoire: Energy Resources Jump to: navigation, search Name Abidjan, Côte d'Ivoire Equivalent URI DBpedia GeoNames ID 2293538 Coordinates 5.341111°, -4.028056° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":5.341111,"lon":-4.028056,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

436

Suzanne G.E. te Velthuis - Argonne National Laboratories, Materials Sicence  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

NXRS > Suzanne G.E. te Velthuis NXRS > Suzanne G.E. te Velthuis Suzanne G.E. te Velthuis Physicist Bldg. 223, B-205 Phone 630-252-1075 This e-mail address is being protected from spambots. You need JavaScript enabled to view it. Quick Links Selected Publications Selected Invited Talks Present Position Physicist, Materials Science Division, Argonne National Laboratory (2005-Present). Education Ph.D. Degree, Deft University of Technology, The Netherlands (1999). Masters Degree in Applied Physics, Eindhoven University of Technology, The Netherlands (1993). Professional Expirence Assistant Scientist, Materials Science Division, Argonne National Laboratory, (2001-2005). Post-doctoral Scientist, Intense Pulsed Neutron Source, Argonne National Laboratory (1999-2001). Researcher in training (leading to PhD degree), Delft University of Technology, The Netherlands (1994 -1998).

437

Energy spectrum of charge carriers in Ag{sub 2}Te  

SciTech Connect (OSTI)

On the basis of investigations of the temperature and concentration dependences of kinetic coefficients (the Hall coefficientR, the electrical conductivity {sigma}, and thermopower {alpha}{sub 0}) in n-type Ag{sub 2}Te, it is established that Ag atoms in Ag{sub 2}Te create the shallow donor levels located at a distance of (0.002-7 x 10{sup -5}T) eV from the bottom of the conduction band. It is shown that silver telluride has n-type conductivity starting with the deficiency of Ag {>=} 0.01 at % in the stoichiometric composition, and it is practically impossible to achieve the stoichiometric composition in Ag{sub 2}Te.

Aliev, F. F., E-mail: farzali@physics.ab.az; Jafarov, M. B. [Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

2008-11-15T23:59:59.000Z

438

Optical characteristics of pulsed laser deposited Ge-Sb-Te thin films studied by spectroscopic ellipsometry  

SciTech Connect (OSTI)

Pulsed laser deposition technique was used for the fabrication of (GeTe){sub 1-x}(Sb{sub 2}Te{sub 3}){sub x} (x = 0, 0.33, 0.50, 0.66, and 1) amorphous thin films. Scanning electron microscopy with energy-dispersive x-ray analysis, x-ray diffraction, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (rocksaltlike) layers. In order to extract optical functions of the films, the Cody-Lorentz model was applied for the analysis of ellipsometric data. Fitted sets of Cody-Lorentz model parameters are discussed in relation with chemical composition and the structure of the layers. The GeTe component content was found to be responsible for the huge optical functions and thickness changes upon amorphous-to-fcc phase transition.

Nemec, P. [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic); Prikryl, J.; Frumar, M. [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic); Nazabal, V. [Equipe Verres et Ceramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Universite de Rennes 1, 35042 Rennes Cedex (France)

2011-04-01T23:59:59.000Z

439

Diffuse neutrinos from extragalactic supernova remnants: Dominating the 100 TeV IceCube flux  

E-Print Network [OSTI]

IceCube has measured a diffuse astrophysical flux of TeV-PeV neutrinos. The most plausible sources are unique high energy cosmic ray accelerators like hypernova remnants (HNRs) and remnants from gamma ray bursts in star-burst galaxies, which can produce primary cosmic rays with the required energies and abundance. In this case, however, ordinary supernova remnants (SNRs), which are far more abundant than HNRs, produce a comparable or larger neutrino flux in the ranges up to 100-150 TeV energies, implying a spectral break in the IceCube signal around these energies. The SNRs contribution in the diffuse flux up to these hundred TeV energies provides a natural baseline and then constrains the expected PeV flux.

Chakraborty, Sovan

2015-01-01T23:59:59.000Z

440

Phase assembly and photo-induced current in CdTe-ZnO nanocomposite thin films  

SciTech Connect (OSTI)

Sequential radio-frequency sputtering was used to produce CdTe-ZnO nanocomposite thin films with varied semiconductor-phase extended structures. Control of the spatial distribution of CdTe nanoparticles within the ZnO embedding phase was used to influence the semiconductor phase connectivity, contributing to both changes in quantum confinement induced spectral absorption and carrier transport characteristics of the resulting nanocomposite. An increased number density of CdTe particles deposited along the applied field direction produced an enhancement in the photo-induced current observed. These results highlight the opportunity to employ long-range phase assembly as a means to control optoelectronic properties of significant interest for photovoltaic applications.

Beal, R. J.; Kana Kana, J. B. [Department of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85721 (United States); Potter, B. G. Jr. [Department of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85721 (United States); College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States)

2012-07-16T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Layer-by-Layer Assembly of Sintered CdSexTe1–x Nanocrystal Solar Cells  

Science Journals Connector (OSTI)

solar cell; nanocrystal; CdTe; CdSexTe1?x; layer-by-layer; solution-processed; sintered ... For instance, devices fabricated using cadmium telluride (CdTe) and copper indium gallium selenide (CIGS) based active layers have exhibited laboratory scale power conversion efficiencies up to 17.3%(1) and 20.3%,(2) respectively, at commercial production costs as low as US $0.75/Watt. ... (20) More recently, the graded device concept has been extended to solution-processed organic solar cells, through a series of complementary donor materials(21) and to PbS quantum dot devices, where bandgap grading was accomplished through variation of the QD diameter. ...

Brandon I. MacDonald; Alessandro Martucci; Sergey Rubanov; Scott E. Watkins; Paul Mulvaney; Jacek J. Jasieniak

2012-06-12T23:59:59.000Z

442

Testing the plutonium isotopic analysis code FRAM with various CdTe detectors.  

SciTech Connect (OSTI)

The isotopic analysis code Fixed-energy Response-function Analysis with Multiple efficiency (FRAM)1,2 has been proven to successfully analyze plutonium spectra taken with a portable CdTe detector with Peltier cooling, the first results of this kind for a noncryogenic detector.3 These are the first wide-range plutonium gamma-ray isotopics analysis results obtained with other than Ge spectrometers. The CdTe spectrometer measured small plutonium reference samples in reasonable count times, covering the range from low to high burnup. This paper describes further testing of FRAM with two CdTe detectors of different sizes and resolutions using different analog and digital, portable multichannel analyzers (MCAs).

Vo, Duc T.; Russo, P. A. (Phyllis A.)

2002-01-01T23:59:59.000Z

443

Hybrid model of GeV-TeV gamma ray emission from Galactic Center  

E-Print Network [OSTI]

The observations of high energy $\\gamma$-ray emission from the Galactic center (GC) by HESS, and recently by Fermi, suggest the cosmic ray acceleration in the GC and possibly around the supermassive black hole. In this work we propose a lepton-hadron hybrid model to explain simultaneously the GeV-TeV $\\gamma$-ray emission. Both electrons and hadronic cosmic rays were accelerated during the past activity of the GC. Then these particles would diffuse outwards and interact with the interstellar gas and background radiation field. The collisions between hadronic cosmic rays with gas is responsible to the TeV $\\gamma$-ray emission detected by HESS. With fast cooling in the strong radiation field, the electrons would cool down and radiate GeV photons through inverse Compton scattering off the soft background photons. This scenario provides a natural explanation of the observed GeV-TeV spectral shape of $\\gamma$-rays.

Yi-Qing Guo; Qiang Yuan; Cheng Liu; Ai-Feng Li

2014-09-14T23:59:59.000Z

444

High-Pressure Synthesis and Structure Determination of K6(SeO4)(SeO5), The First Potassium Orthoselenate(VI)  

SciTech Connect (OSTI)

The authors report on the first synthesis of a potassium orthoselenate(VI), K{sub 6}(SeO{sub 4})(SeO{sub 5}), and the structure determination from synchrotron powder diffraction data. The title compound crystallizes in the tetragonal space group P4{sub 1}2{sub 1}2 with a = 8.1259(1) {angstrom}, c = 17.4953(2) {angstrom}, V = 1155.21(2) {angstrom}{sup 3}, and Z = 4. Selenium displays two different complex anions, tetrahedral SeO{sub 4}{sup 2-} and trigonal-bipyramidal SeO{sub 5}{sup 4-}. When the formula is reduced to A{sub 3}B, the spatial arrangement of the constituting building units can be derived from the Li{sub 3}Bi type of structure.

Orosel,D.; Dinnebeier, R.; Jansen, M.

2006-01-01T23:59:59.000Z

445

Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers  

SciTech Connect (OSTI)

Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors, fabricated by growing p-and n-type CdTe epilayers on (211) n{sup +}-Si substrates using metalorganic vapor-phase epitaxy (MOVPE), were studied by analyzing current-voltage characteristics measured at various temperatures. The diode fabricated shows good rectification properties, however, both forward and reverse biased currents deviate from their ideal behavior. The forward current exhibits typical feature of multi-step tunneling at lower biases; however, becomes space charge limited type when the bias is increased. On the other hand, the reverse current exhibits thermally activated tunneling-type current. It was found that trapping centers at the p-CdTe/n-CdTe junction, which were formed due to the growth induced defects, determine the currents of this diode, and hence limit the performance of the nuclear radiation detectors developed.

Niraula, M.; Yasuda, K.; Wajima, Y.; Yamashita, H.; Tsukamoto, Y.; Suzuki, Y.; Matsumoto, M.; Takai, N.; Tsukamoto, Y.; Agata, Y. [Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan)] [Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan)

2013-10-28T23:59:59.000Z

446

Ionic conductivity and dielectric relaxation in {gamma}-irradiated TlGaTe{sub 2} crystals  

SciTech Connect (OSTI)

The switching effect, field and temperature dependences of the permittivity and conductivity of TlGaTe{sub 2} crystals subjected to various {gamma}-irradiation doses are studied. Under rather low electric fields, the phenomenon of threshold switching with an S-shaped current-voltage characteristic containing a portion with negative differential resistance is observed in the crystals. In the region of critical voltages, current and voltage oscillations and imposed modulation are observed. Possible mechanisms of switching, ionic conductivity, disorder, and electrical instability in TlGaTe{sub 2} crystals are discussed.

Sardarli, R. M., E-mail: sardarli@yahoo.com; Samedov, O. A.; Abdullayev, A. P. [National Academy of Sciences of Azerbaijan, Institute of Radiation Problems (Azerbaijan); Huseynov, E. K. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan); Salmanov, F. T.; Alieva, N. A.; Agaeva, R. Sh. [National Academy of Sciences of Azerbaijan, Institute of Radiation Problems (Azerbaijan)

2013-05-15T23:59:59.000Z

447

Measurement of Dijet Azimuthal Decorrelations in pp Collisions at {radical}(s)=7 TeV  

SciTech Connect (OSTI)

Azimuthal decorrelations between the two central jets with the largest transverse momenta are sensitive to the dynamics of events with multiple jets. We present a measurement of the normalized differential cross section based on the full data set ({integral}Ldt=36 pb{sup -1}) acquired by the ATLAS detector during the 2010 {radical}(s)=7 TeV proton-proton run of the LHC. The measured distributions include jets with transverse momenta up to 1.3 TeV, probing perturbative QCD in a high-energy regime.

Aad, G.; Ahles, F.; Beckingham, M.; Bernhard, R.; Bitenc, U.; Bruneliere, R.; Caron, S.; Carpentieri, C.; Christov, A.; Dahlhoff, A.; Dietrich, J.; Eckert, S.; Fehling-Kaschek, M.; Flechl, M.; Glatzer, J. [Fakultaet fuer Mathematik und Physik, Albert-Ludwigs-Universitaet, Freiburg i.Br. (Germany); Abbott, B. [Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman Oklahoma (United States); Abdallah, J.; Bosman, M.; Casado, M. P.; Cavalli-Sforza, M. [Institut de Fisica d'Altes Energies and Universitat Autonoma de Barcelona and ICREA, Barcelona (Spain)

2011-04-29T23:59:59.000Z

448

Improvement of the energy resolution of CdTe detectors by pulse height correction from waveform  

E-Print Network [OSTI]

Semiconductor detectors made of CdTe crystal have high gamma-ray detection efficiency and are usable at room temperature. However, the energy resolution of CdTe detectors for MeV gamma-rays is rather poor because of the significant hole trapping effect. We have developed a method to improve the energy resolution by correcting the pulse height using the waveform of the signal and achieved 2.0% (FWHM) energy resolution for 662keV gamma-rays. Best energy resolution was achieved at temperatures between -10 degrees C and 0 degrees C.

Kikawa, T; Hiraki, T; Nakaya, T

2011-01-01T23:59:59.000Z

449

Improvement of the energy resolution of CdTe detectors by pulse height correction from waveform  

E-Print Network [OSTI]

Semiconductor detectors made of CdTe crystal have high gamma-ray detection efficiency and are usable at room temperature. However, the energy resolution of CdTe detectors for MeV gamma-rays is rather poor because of the significant hole trapping effect. We have developed a method to improve the energy resolution by correcting the pulse height using the waveform of the signal and achieved 2.0% (FWHM) energy resolution for 662keV gamma-rays. Best energy resolution was achieved at temperatures between -10 degrees C and 0 degrees C.

T. Kikawa; A. K. Ichikawa; T. Hiraki; T. Nakaya

2011-12-21T23:59:59.000Z

450

Ultrahigh Energy Cosmic Rays and Prompt TeV Gamma Rays from Gamma Ray Bursts  

E-Print Network [OSTI]

Gamma Ray Bursts (GRBs) have been proposed as one {\\it possible} class of sources of the Ultrahigh Energy Cosmic Ray (UHECR) events observed up to energies $\\gsim10^{20}\\ev$. The synchrotron radiation of the highest energy protons accelerated within the GRB source should produce gamma rays up to TeV energies. Here we briefly discuss the implications on the energetics of the GRB from the point of view of the detectability of the prompt TeV gamma rays of proton-synchrotron origin in GRBs in the up-coming ICECUBE muon detector in the south pole.

Pijushpani Bhattacharjee; Nayantara Gupta

2003-05-12T23:59:59.000Z

451

A search for neutrinoless double beta decay of 130Te with a low temperature calorimeter  

Science Journals Connector (OSTI)

Possible impacts of the bolometric technique on Neutrinoless Double Beta Decay (0??DVD) search are discussed. In this approach the performances of two TeO2 low temperature calorimeters with masses of 73 g and 340 g are reported: the FWHM resolutions are respectively 6 keV and 20 keV at 2614 keV. The operation of these detectors in a low background environment in the Gran Sasso underground laboratory has allowed to set a limit on the half?life of 130Te 2??DBD of about 2.5×1021 and to study the residual radioactive background components.

A. Alessandrello; C. Brofferio; D. V. Camin; O. Cremonesi; G. Gervasio; E. Fiorini; A. Giuliani; M. Pavan; G. Pessina; E. Previtali; L. Zanotti

1992-01-01T23:59:59.000Z

452

Shubnikov-de Haas Oscillations in the Bulk Rashba Semiconductor BiTeI  

SciTech Connect (OSTI)

Bulk magnetoresistance quantum oscillations are observed in high quality single crystal samples of BiTeI. This compound shows an extremely large internal spin-orbit coupling, associated with the polarity of the alternating Bi, Te, and I layers perpendicular to the c-axis. The corresponding areas of the inner and outer Fermi surfaces around the A-point show good agreement with theoretical calculations, demonstrating that the intrinsic bulk Rashba-type splitting is nearly 360 meV, comparable to the largest spin-orbit coupling generated in heterostructures and at surfaces.

Bell, C.; Bahramy, M.S.; Murakawa, H.; Checkelsky, J.G.; Arita, R.; Kaneko, Y.; Onose, Y.; Nagaosa, N.; Tokura, Y.; Hwang, H.Y.

2012-07-11T23:59:59.000Z

453

Use of a capillary X-ray focused beam to investigate the chemical composition of CdZnTe wafers with high resolution CdZnTe detectors  

SciTech Connect (OSTI)

The control of the concentration of Zn and its fluctuation in the high pressure Bridgman grown CdZnTe crystals is part of the characterization work on the ternary grown ingots grown in house. In order to reach both high sensitivity and high position resolution, the authors have developed a new system consisting of a X-ray generator, coupled to a focusing X-ray capillary, delivering intense beams in the micron scale, since the intensity gain is around a factor of 100 compared to conventional methods. The characteristic X-rays are measured through a high resolution CdZnTe detector (225 eV at 5.9 keV FWHM) cooled by a Peltier system. The results of the investigations on different kinds of crystals will be discussed.

Fougeres, P. [EURORAD, Strasbourg (France); Burggraf, Ch.; Burggraf, Chr.; Koebel, J.M.; Regal, R.; Hage-Ali, M.; Krauth, A.; Siffert, P. [CNRS, Strasbourg (France). Lab. PHASE; Koenig, C. [Univ. Louis Pasteur, Schiltigheim (France)

1998-12-31T23:59:59.000Z

454

Search for resonances in the dijet mass spectrum from 7 TeV pp collisions at CMS  

E-Print Network [OSTI]

A search for narrow resonances with a mass of at least 1 TeV in the dijet mass spectrum is performed using pp collisions at ?s = 7 TeV corresponding to an integrated luminosity of 1 fb[superscript ?1], collected by the CMS ...

CMS Collaboration

455

The effect of impurities on the doping and VOC of CdTe/CdS thin film solar cells  

Science Journals Connector (OSTI)

The effect of introducing impurities in CdTe, namely antimony (Sb) and oxygen (O), on the net carrier concentration in CdS/CdTe solar cells and on their open-circuit voltage (VOC) has been investigated. Oxygen was introduced in the CdTe films during the deposition of this layer by the close-spaced sublimation process. The total pressure was held constant at 1330 Pa (N2 and O2). The amount of oxygen was varied by varying its partial pressure. Antimony was introduced into CdTe using a post-deposition diffusion process. Following the deposition of CdTe a thin film (a few nm) of Sb was deposited onto the CdTe surface and subsequently heat-treated to cause in-diffusion of Sb. The temperature and time during the diffusion process were varied in the range of 300–525 °C and 20–160 min respectively. In both instances it was possible to vary (increase) the doping concentration in CdTe. The increase in doping was accompanied by an increase in VOC. However, in all instances the doping in CdTe reached a maximum value, beyond which further increases were not possible leading to saturation in VOC. The highest VOC measured was similar to state-of-the-art values in the range of 800–830 mV, and the highest doping concentration measured was in the 1016 cm? 3 range.

H. Zhao; Alvi Farah; D. Morel; C.S. Ferekides

2009-01-01T23:59:59.000Z

456

PHOTOREFRACTIVE RESPONSE OF CdTe:V UNDER AC ELECTRIC FIELD FROM 1 TO 1.5m  

E-Print Network [OSTI]

for the extension of the photorefractive effect towards the wavelength region of 1.3-1.5µm. Cadmium Telluride (CdTe conduction (hole-electron competition). Sample and experimental set-up presentations : The CdTe sample we

457

Cadmium sulfate and CdTe-quantum dots alter DNA repair in zebrafish (Danio rerio) liver cells  

SciTech Connect (OSTI)

Increasing use of quantum dots (QDs) makes it necessary to evaluate their toxicological impacts on aquatic organisms, since their contamination of surface water is inevitable. This study compares the genotoxic effects of ionic Cd versus CdTe nanocrystals in zebrafish hepatocytes. After 24 h of CdSO{sub 4} or CdTe QD exposure, zebrafish liver (ZFL) cells showed a decreased number of viable cells, an accumulation of Cd, an increased formation of reactive oxygen species (ROS), and an induction of DNA strand breaks. Measured levels of stress defense and DNA repair genes were elevated in both cases. However, removal of bulky DNA adducts by nucleotide excision repair (NER) was inhibited with CdSO{sub 4} but not with CdTe QDs. The adverse effects caused by acute exposure of CdTe QDs might be mediated through differing mechanisms than those resulting from ionic cadmium toxicity, and studying the effects of metallic components may be not enough to explain QD toxicities in aquatic organisms. - Highlights: • Both CdSO{sub 4} and CdTe QDs lead to cell death and Cd accumulation. • Both CdSO{sub 4} and CdTe QDs induce cellular ROS generation and DNA strand breaks. • Both CdSO{sub 4} and CdTe QDs induce the expressions of stress defense and DNA repair genes. • NER repair capacity was inhibited with CdSO{sub 4} but not with CdTe QDs.

Tang, Song; Cai, Qingsong [The Institute of Environmental and Human Health, Texas Tech University, Lubbock, TX 79416 (United States); Chibli, Hicham [Department of Biomedical Engineering, McGill University, Montréal, QC H3A 2B4 (Canada); Allagadda, Vinay [The Institute of Environmental and Human Health, Texas Tech University, Lubbock, TX 79416 (United States); Nadeau, Jay L. [Department of Biomedical Engineering, McGill University, Montréal, QC H3A 2B4 (Canada); Mayer, Gregory D., E-mail: greg.mayer@ttu.edu [The Institute of Environmental and Human Health, Texas Tech University, Lubbock, TX 79416 (United States)

2013-10-15T23:59:59.000Z

458

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION ELECTRON MICROSCOPY  

E-Print Network [OSTI]

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION, A. N. Tiwari Thin Film Physics Group, Laboratory for Solid State Physics, Technopark ETH-Building, Technoparkstr. 1, CH-8005 Zurich, Switzerland ABSTRACT: CdTe/CdS thin £lm solar cells have been grown by closed

Romeo, Alessandro

459

Sonochemical and hydrothermal synthesis of PbTe nanostructures with the aid of a novel capping agent  

SciTech Connect (OSTI)

Graphical abstract: - Highlights: • PbTe nanostructures were prepared with the aid of Schiff-base compound. • Sonochemical and hydrothermal methods were employed to fabricate PbTe nanostrucrues. • The effect of preparation parameters on the morphology of PbTe was investigated. - Abstract: In this work, a new Schiff-base compound derived from 1,8-diamino-3,6-dioxaoctane and 2-hydroxy-1-naphthaldehyde marked as (2-HyNa)-(DaDo) was synthesized, characterized, and then used as capping agent for the preparation of PbTe nanostructures. To fabricate PbTe nanostructures, two different synthesis methods; hydrothermal and sonochemical routes, were applied. To further investigate, the effect of preparation parameters like reaction time and temperature in hydrothermal synthesis and sonication time in the presence of ultrasound irradiation on the morphology and purity of the final products was tested. The products were analyzed with the aid of SEM, TEM, XRD, FT-IR, and EDS. Based on the obtained results, it was found that pure cubic phased PbTe nanostructures have been obtained by hydrothermal and sonochemical approaches. Besides, SEM images showed that cubic-like and rod-like PbTe nanostructures have been formed by hydrothermal and sonochemical methods, respectively. Sonochemical synthesis of PbTe nanostructures was favorable, because the synthesis time of sonochemical method was shorter than that of hydrothermal method.

Fard-Fini, Shahla Ahmadian [Department of Chemistry, Payame Noor University, P.O. Box 19395-3697, Tehran, Islamic Republic of Iran (Iran, Islamic Republic of); Salavati-Niasari, Masoud, E-mail: salavati@kashanu.ac.ir [Department of Inorganic Chemistry, Faculty of Chemistry, University of Kashan, P.O. Box 87317-51167, Kashan, Islamic Republic of Iran (Iran, Islamic Republic of); Institute of Nano Science and Nano Technology, University of Kashan, P.O. Box 87317-51167, Kashan, Islamic Republic of Iran (Iran, Islamic Republic of); Mohandes, Fatemeh [Department of Inorganic Chemistry, Faculty of Chemistry, University of Kashan, P.O. Box 87317-51167, Kashan, Islamic Republic of Iran (Iran, Islamic Republic of)

2013-10-15T23:59:59.000Z

460

A New LCA Methodology of Technology Evolution (TE-LCA) and its Application to the Production of Ammonia (1950-2000) (8 pp)  

Science Journals Connector (OSTI)

This paper presents a new LCA method of technology evolution (TE-LCA), and its application to the production ... over the last fifty years. The TE-LCA of a chemical process is the procedure ... then transformed ...

Ramon Mendivil; Ulrich Fischer…

2006-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Open-circuit voltage, fill factor, and efficiency of a CdS/CdTe solar cell  

SciTech Connect (OSTI)

The dependences of the open-circuit voltage, fill factor, and efficiency of the thin-film CdS/CdTe solar cell on the resistivity {rho} and carrier lifetime {tau} in the absorbing CdTe layer were studied. In the common case in which the uncompensated acceptor concentration and the electron lifetime in the CdTe layer are within 10{sup 15}-10{sup 16} cm{sup -3} and 10{sup -10}-10{sup -9} s, the calculation results correspond to the achieved efficiency of the best thin-film CdS/CdTe solar cells. It was shown that, by decreasing {rho} and increasing {tau} in the absorbing CdTe layer, the open-circuit voltage, fill factor, and efficiency can be substantially increased, with their values approaching the theoretical limit for such devices.

Kosyachenko, L. A., E-mail: lakos@chv.ukrpack.net; Grushko, E. V. [Yuriy Fedkovych Chernivtsi National University (Ukraine)

2010-10-15T23:59:59.000Z

462

U-105:Oracle Java SE Critical Patch Update Advisory | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

05:Oracle Java SE Critical Patch Update Advisory 05:Oracle Java SE Critical Patch Update Advisory U-105:Oracle Java SE Critical Patch Update Advisory February 16, 2012 - 11:45am Addthis PROBLEM: Oracle Java SE Critical Patch Update Advisory PLATFORM: 1.4.2_35 and prior, 5.0 Update 33 and prior; 6 Update 30 and prior; 7 Update 2 and prior ABSTRACT: Multiple vulnerabilities were reported in Oracle Java SE. A remote user can execute arbitrary code on the target system. A remote user can cause denial of service conditions. reference LINKS: Oracle Java SE Critical Patch Critical Patch Security Alerts SecurityTracker Alert ID: 1026688 Secunia Advisory: SA48009 Red Hat advisory IMPACT ASSESSMENT: High Discussion: A remote user can send specially crafted data to execute arbitrary code on the target system or cause complete denial of service conditions. The Java

463

HKC-US: Proposed Penalty (2013-SE-33002) | Department of Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Proposed Penalty (2013-SE-33002) Proposed Penalty (2013-SE-33002) HKC-US: Proposed Penalty (2013-SE-33002) July 11, 2013 DOE alleged in a Notice of Proposed Civil Penalty that HKC-US, LLC failed to certify a ceiling fan light kit as compliant with the applicable energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. HKC-US: Proposed Penalty (2013-SE-33002) More Documents & Publications HKC-US: Order (2013-SE-33002) Royal Pacific: Proposed Penalty (2013-SE-33004) Excellence Opto: Proposed Penalty

464

Pulsed laser deposition of Mn doped CdSe quantum dots for improved solar cell performance  

SciTech Connect (OSTI)

In this work, we demonstrate (1) a facile method to prepare Mn doped CdSe quantum dots (QDs) on Zn{sub 2}SnO{sub 4} photoanodes by pulsed laser deposition and (2) improved device performance of quantum dot sensitized solar cells of the Mn doped QDs (CdSe:Mn) compared to the undoped QDs (CdSe). The band diagram of photoanode Zn{sub 2}SnO{sub 4} and sensitizer CdSe:Mn QD is proposed based on the incident-photon-to-electron conversion efficiency (IPCE) data. Mn-modified band structure leads to absorption at longer wavelengths than the undoped CdSe QDs, which is due to the exchange splitting of the CdSe:Mn conduction band by the Mn dopant. Three-fold increase in the IPCE efficiency has also been observed for the Mn doped samples.

Dai, Qilin; Wang, Wenyong, E-mail: wwang5@uwyo.edu, E-mail: jtang2@uwyo.edu; Tang, Jinke, E-mail: wwang5@uwyo.edu, E-mail: jtang2@uwyo.edu [Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071 (United States); Sabio, Erwin M. [Department of Chemistry, University of Wyoming, Laramie, Wyoming 82071 (United States)

2014-05-05T23:59:59.000Z

465

U-105:Oracle Java SE Critical Patch Update Advisory | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

5:Oracle Java SE Critical Patch Update Advisory 5:Oracle Java SE Critical Patch Update Advisory U-105:Oracle Java SE Critical Patch Update Advisory February 16, 2012 - 11:45am Addthis PROBLEM: Oracle Java SE Critical Patch Update Advisory PLATFORM: 1.4.2_35 and prior, 5.0 Update 33 and prior; 6 Update 30 and prior; 7 Update 2 and prior ABSTRACT: Multiple vulnerabilities were reported in Oracle Java SE. A remote user can execute arbitrary code on the target system. A remote user can cause denial of service conditions. reference LINKS: Oracle Java SE Critical Patch Critical Patch Security Alerts SecurityTracker Alert ID: 1026688 Secunia Advisory: SA48009 Red Hat advisory IMPACT ASSESSMENT: High Discussion: A remote user can send specially crafted data to execute arbitrary code on the target system or cause complete denial of service conditions. The Java

466

MATERIALS FOR SOLAR PHOTOCELLS : PLACE OF CdTe Laboratoire de Physique des Solides C. N. R. S., 1, place Aristide-Briand, 92190 Meudon, France  

E-Print Network [OSTI]

MATERIALS FOR SOLAR PHOTOCELLS : PLACE OF CdTe M. RODOT Laboratoire de Physique des Solides C. N. R général, puis appliqués à CdTe. On montre que CdTe est l'un des matériaux les plus prometteurs. Une revue des cellules au CdTe doivent encore être obtenues. Abstract. 2014 The choice of the best materials

Paris-Sud XI, Université de

467

Pressure-induced phase transformation of In2Se3 Anya M. Rasmussen,1  

E-Print Network [OSTI]

13 February 2013) In2Se3 has potential as a phase-change material for memory applications and the defect wurtzite c phase.1 Recently, In2Se3 has received attention as a phase-change material that could be used in phase-change random access memory (PRAM) applications.2,3 In2Se3 may be preferable over Ge2Sb2

McCluskey, Matthew

468

Fe3O4-LiMo3Se3 Nanoparticle Clusters as Superparamagnetic Nanocompasses  

E-Print Network [OSTI]

Fe3O4-LiMo3Se3 Nanoparticle Clusters as Superparamagnetic Nanocompasses Frank E. Osterloh,*, Hiroki bacteria is described. LiMo3Se3-Fe3O4 nanowire-nanoparticle composites were synthesized by a reaction of 3-iodopropionic acid treated LiMo3Se3 nanowire bundles with oleic acid-stabilized Fe3O4 nanoparticles of 2.8, 5

Osterloh, Frank

469

Direct Patterning of CdSe Quantum Dots into Sub-100 nm Structures  

SciTech Connect (OSTI)

Ordered, two-dimensional cadmium selenide (CdSe) arrays have been fabricated on indium-doped tin oxide (ITO) electrodes using the pattern replication in nonwetting templates (PRINT) process. CdSe quantum dots (QDs) with an average diameter of 2.7 nm and a pyridine surface ligand were used for patterning. The PRINT technique utilizes a perfluoropolyether (PFPE) elastomeric mold that is tolerant of most organic solvents, thus allowing solutions of CdSe QDs in 4-picoline to be used for patterning without significant deformation of the mold. Nanometer-scale diffraction gratings have been successfully replicated with CdSe QDs.

Hampton, Meredith J.; Templeton, Joseph L.; DeSimone, Joseph M.

2010-01-01T23:59:59.000Z

470

Mechanical and electronic-structure properties of compressed CdSe tetrapod nanocrystals  

E-Print Network [OSTI]

Mechanical and electronic-structure properties of compressed94720 USA The coupling of mechanical and optical propertiestheoretical examination of the mechanical properties of CdSe

Schrier, Joshua; Lee, Byounghak; Wang, Lin-Wang

2008-01-01T23:59:59.000Z

471

BOX 50005, SE-104 05 STOCKHOLM, SWEDEN, RECEPTION +46 8 673 95 00, FAX +46 8 15 56 70 BESK/VISIT: LILLA FRESCATIVGEN 4A, STOCKHOLM, INFO@KVA.SE HTTP://KVA.SE  

E-Print Network [OSTI]

BOX 50005, SE-104 05 STOCKHOLM, SWEDEN, RECEPTION +46 8 673 95 00, FAX +46 8 15 56 70 BESÃ?K by Patricia K. Kuhl, University of Washington, Seattle, WA, USA and Hon. Dr., Stockholm University, Sweden will be followed by a panel discussion including Hugo Lagercrantz, Karolinska Institutet, Solna, Sweden, Andrew

472

HOMOGENEITY ALONG Cl-COMPENSATED THM GROWN CdTe INGOT NGO-TICH-PHUOC, G. M. MARTIN, C. BELIN and E. FABRE  

E-Print Network [OSTI]

195 HOMOGENEITY ALONG Cl-COMPENSATED THM GROWN CdTe INGOT NGO-TICH-PHUOC, G. M. MARTIN, C. BELIN resistivity CdTe is believed to present some potentialities as a material for y-rays detection at room carried out [8-9]. This paper presents an assessment of Cl-compen- sated, THM grown CdTe ingots : emphasis

Paris-Sud XI, Université de

473

THE RELATIONSHIP OF CdS/CdTe CELL BAND PROFILES TO J-V CHARACTERISTICS AND BIAS-DEPENDENT QUANTUM EFFICIENCY  

E-Print Network [OSTI]

-over, and, in some cases, long J-V and capacitance transient effects. CdTe is highly compensated containing by charge in the bulk CdTe within the absorber. PATHWAYS TO INCREASED EFFICIENCY There are several general to realize in practice. One pathway is by increasing the net negative charge in the CdTe by "p-type doping

Sites, James R.

474

Investigation of the evolution of single domain ,,111...B CdTe films by molecular beam epitaxy on miscut ,,001...Si substrate  

E-Print Network [OSTI]

Investigation of the evolution of single domain ,,111...B CdTe films by molecular beam epitaxy; accepted for publication 22 July 1998 A comprehensive view of the microstructure of 111 B CdTe films grown and scanning transmission electron microscopy. It is found that in the initial growth stage, CdTe nucleates

Pennycook, Steve

475

The irradiation hardness of CdTe solar cells was inves-tigated for extremely high fluence of protons (up to  

E-Print Network [OSTI]

ABSTRACT The irradiation hardness of CdTe solar cells was inves- tigated for extremely high fluence high fluences. One general degradation characteristic for CdTe cells was calculated using a damage dose formulation, allowing a comprehen- sive comparison with other cell technologies. CdTe cells show an excellent

Romeo, Alessandro

476

FLEXIBLE CdTe SOLAR CELLS BY A LOW TEMPERATURE PROCESS ON ITO/ZnO COATED A. Salavei, I. Rimmaudo, F. Piccinelli1  

E-Print Network [OSTI]

FLEXIBLE CdTe SOLAR CELLS BY A LOW TEMPERATURE PROCESS ON ITO/ZnO COATED POLYMERS A. Salavei, I of a deposition process for flexible CdTe devices on ITO/ZnO coated polymers. Optimization of fabrication process will be discussed. Keywords: Flexible Substrate, CdTe, ITO, Laser Processing, Thin Film Solar Cell 1 INTRODUCTION

Romeo, Alessandro

477

TeV J2032+4130: a not-so-dark Accelerator?  

E-Print Network [OSTI]

The HEGRA gamma-ray source TeV J2032+4130 is considered the prototypical 'dark accelerator', since it was the first TeV source detected with no firm counterparts at lower frequencies. The Whipple collaboration observed this source in 2003-5 and the emission hotspot appears displaced about 9 arcminutes to the northeast of the HEGRA position, though given the large positional uncertainties the HEGRA and Whipple positions are consistent. Here we report on Westerbork Synthesis Radio Telescope (WSRT), Very Large Array (VLA), Chandra and INTEGRAL data covering the locations of the Whipple and HEGRA hotspots. We confirm a dual-lobed radio source (also see Marti et al., 2007) coincident with the Whipple hotspot, as well as a weak, partially non-thermal shell-like object, with a location and morphology very similar to the HEGRA source, in our WSRT and mosaicked VLA datasets, respectively. Due to its extended nature, it is likely that the latter structure is a more plausible counterpart of the reported very high energy (VHE) gamma-ray emissions in this region. If so, TeV J2032+4130 may not be a 'dark accelerator' after all. Further observations with the new generation of imaging Cherenkov telescopes are needed to pin down the precise location and morphology of the TeV emission region and thus clear up the confusion over its possible lower frequency counterparts.

Yousaf M. Butt; Jorge A. Combi; Jeremy Drake; John P. Finley; Alexander Konopelko; Matthew Lister; Jerome Rodriguez; Debra Shepherd

2006-11-23T23:59:59.000Z

478

Accelerated Stress Testing and Diagnostic Analysis of Degradation in CdTe Solar Cells  

SciTech Connect (OSTI)

The primary goal of this study was to ascertain the presence and types of mechanisms affecting CdS/CdTe device stability in the temperature range of 60 to 120 ..deg..C. It should be noted that the results presented were specific to cells made using the specific growth conditions described.

Albin, D. S.

2008-11-01T23:59:59.000Z

479

First measurement of hadronic event shapes in pp collisions at ?s = 7 TeV  

E-Print Network [OSTI]

Hadronic event shapes have been measured in proton–proton collisions at ?s =7 TeV, with a data sample collected with the CMS detector at the LHC. The sample corresponds to an integrated luminosity of 3.2 pb-1. Event-shape ...

CMS Collaboration

480

Results on CP Violation from Belle T.E. Browder representing the Belle Collaboration  

E-Print Network [OSTI]

Results on CP Violation from Belle T.E. Browder representing the Belle Collaboration Department of Physics, University of Hawaii, Honolulu, Hawaii Abstract. I describe the recent measurement of the CP In 1973, Kobayashi and Maskawa (KM) first proposed a model where CP violation is incorporated

Browder, Tom

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481

14%-efficient flexible CdTe solar cells on ultra-thin glass substrates  

SciTech Connect (OSTI)

Flexible glass enables high-temperature, roll-to-roll processing of superstrate devices with higher photocurrents than flexible polymer foils because of its higher optical transmission. Using flexible glass in our high-temperature CdTe process, we achieved a certified record conversion efficiency of 14.05% for a flexible CdTe solar cell. Little has been reported on the flexibility of CdTe devices, so we investigated the effects of three different static bending conditions on device performance. We observed a consistent trend of increased short-circuit current and fill factor, whereas the open-circuit voltage consistently dropped. The quantum efficiency under the same static bend condition showed no change in the response. After storage in a flexed state for 24 h, there was very little change in device efficiency relative to its unflexed state. This indicates that flexible glass is a suitable replacement for rigid glass substrates, and that CdTe solar cells can tolerate bending without a decrease in device performance.

Rance, W. L.; Burst, J. M.; Reese, M. O.; Gessert, T. A.; Metzger, W. K.; Barnes, T. M. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Meysing, D. M.; Wolden, C. A. [Colorado School of Mines, Golden, Colorado 80401 (United States); Garner, S.; Cimo, P. [Corning Incorporated, Corning, New York 14831 (United States)

2014-04-07T23:59:59.000Z

482

MilagroA TeV Observatory for Gamma Ray Bursts  

E-Print Network [OSTI]

Milagro­A TeV Observatory for Gamma Ray Bursts B.L. Dingus and the Milagro Collaboration Los energy gamma-rays from gamma-ray bursts. The highest energy gamma rays supply very strong constraints on the nature of gamma-ray burst sources as well as fundamental physics. Because the highest energy gamma-rays

California at Santa Cruz, University of

483

Rational Synthesis of Ultrathin n-Type Bi2Te3 Nanowires with Enhanced Thermoelectric Properties  

E-Print Network [OSTI]

, which can generate electricity by recovering waste heat or be used as solid-state cooling devices, have-based thermoelectric power generation and solid-state cooling devices with superior performance in a reliableRational Synthesis of Ultrathin n-Type Bi2Te3 Nanowires with Enhanced Thermoelectric Properties

Xu, Xianfan

484

Expectations for neutron-antineutron oscillation time from TeV scale baryogenesis  

SciTech Connect (OSTI)

A TeV scale extension of the standard model that incorporates the seesaw mechanism for neutrino masses along with quark-lepton unification is presented. It is shown that this model leads to the {Delta}B= 2 baryon number violating process of neutron-antineutron (n-bar n) oscillation. The model has all the ingredients to generate the observed baryon asymmetry of the universe using the B-violating decay of a scalar field involved in the seesaw mechanism. The B-violating decay arises from the exchange of color sextet scalars which have TeV scale masses. Baryogenesis occurs below the sphaleron decoupling temperature and has been termed post-sphaleron baryogenesis. Here we show that the constraints of TeV scale baryogenesis, when combined with the neutrino oscillation data and restrictions from flavor changing neutral currents mediated by the colored scalars imply an upper limit on the n-bar n oscillation time of 5 Multiplication-Sign 10{sup 10} sec. regardless of the quark-lepton unification scale. If this scale is relatively low, in the (200 - 250) TeV range, {tau}{sub n-bar} {sub n} is predicted to be less than 10{sup 10} sec., which is accessible to the next generation of proposed experiments.

Babu, K. S. [Department of Physics, Oklahoma State University, Stillwater, OK 74078 (United States); Bhupal Dev, P. S. [Consortium for Fundamental Physics, School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL (United Kingdom); Fortes, Elaine C. F. S. [Instituto de Fisica Teorica-Universidade Estadual Paulista, R. Dr. Bento Teobaldo Ferraz 271, Sao Paulo-SP, 01140-070 (Brazil); Mohapatra, Rabindra N. [Maryland Center for Fundamental Physics and Department of Physics, University of Maryland, College Park, MD 20742 (United States)

2013-05-23T23:59:59.000Z

485

REVIEW OF OPTICAL APPLICATIONS OF CdTe Mobil Tyco Solar Energy Corporation 16 Hickory Drive  

E-Print Network [OSTI]

REVIEW OF OPTICAL APPLICATIONS OF CdTe R. O. BELL Mobil Tyco Solar Energy Corporation 16 Hickory of optical applications. These include electrooptic modulation, high power laser windows, electroluminescence will be paid to the various optical absorption mechanisms and the effects of impurities on the optical behavior

Paris-Sud XI, Université de

486

Investigation of deep level defects in CdTe thin films  

SciTech Connect (OSTI)

In the past few years, a large body of work has been dedicated to CdTe thin film semiconductors, as the electronic and optical properties of CdTe nanostructures make them desirable for photovoltaic applications. The performance of semiconductor devices is greatly influenced by the deep levels. Knowledge of parameters of deep levels present in as-grown materials and the identification of their origin is the key factor in the development of photovoltaic device performance. Photo Induced Current Transient Spectroscopy technique (PICTS) has proven to be a very powerful method for the study of deep levels enabling us to identify the type of traps, their activation energy and apparent capture cross section. In the present work, we report the effect of growth parameters and LASER irradiation intensity on the photo-electric and transport properties of CdTe thin films prepared by Close-Space Sublimation method using SiC electrical heating element. CdTe thin films were grown at three different source temperatures (630, 650 and 700 °C). The grown films were irradiated with Nd:YAG LASER and characterized by Photo-Induced Current Transient Spectroscopy, Photocurrent measurementand Current Voltage measurements. The defect levels are found to be significantly influenced by the growth temperature.

Shankar, H.; Castaldini, A. [Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy); Dieguez, E.; Rubio, S. [Crystal Growth Lab, Department of Materials Physics, Faculty of Science, University Autonoma of Madrid, Ciudad Universitaria de Cantoblanco, 28049, Madrid (Spain); Dauksta, E.; Medvid, A. [Institute of Technical Physics, Riga Technical University, 14 Azenes Str, Riga, Latvia, Department of Materials (Latvia); Cavallini, A. [Department of Physics and Astronomy,University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy)

2014-02-21T23:59:59.000Z

487

Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices  

SciTech Connect (OSTI)

We discuss typical and alternative procedures to analyze time-resolved photoluminescence (TRPL) measurements of minority carrier lifetime (MCL) with the hope of enhancing our understanding of how this technique may be used to better analyze CdTe photovoltaic (PV) device functionality. Historically, TRPL measurements of the fast recombination rate (t{sub 1}) have provided insightful correlation with broad device functionality. However, we have more recently found that t{sub 1} does not correlate as well with smaller changes in device performance, nor does it correlate well with performance differences observed between superstrate and substrate CdTe PV devices. This study presents TRPL data for both superstrate and substrate CdTe devices where both t{sub 1} and the slower TRPL decay (t{sub 2}) are analyzed. The study shows that changes in performance expected from small changes in device processing may correlate better with t{sub 2}. Numerical modeling further suggests that, for devices that are expected to have similar drift field in the depletion region, effects of changes in bulk MCL and interface recombination should be more pronounced in t{sub 2}. Although this technique may provide future guidance to improving CdS/CdTe device performance, it is often difficult to extract statistically precise values for t{sub 2}, and therefore t{sub 2} data may demonstrate significant scatter when correlated with performance parameters.

Gessert, T. A.; Dhere, R. G.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Bergeson, J. D.

2011-01-01T23:59:59.000Z

488

Nanoassembly control and optical absorption in CdTe-ZnO nanocomposite thin films  

SciTech Connect (OSTI)

The spatial distribution of CdTe nanoparticles within a ZnO thin-film matrix was manipulated using a dual-source, sequential radio-frequency (RF)-sputter deposition technique to produce nanocomposite materials with tuned spectral absorption characteristics. The relative substrate exposure time to each sputtering source was used to control the semiconductor phase connectivity, both within the film plane and along the film growth direction, to influence the degree of photocarrier confinement and the resulting optical transition energies exhibited by the CdTe phase. Significant changes (up to {Delta}E {approx_equal} 0.3 eV) in the absorption onset energy for the CdTe nanoparticle ensemble were produced through modification in the extended structure of the semiconductor phase. Raman spectroscopy, cross-sectional transmission electron microscopy, and x-ray diffraction were used to confirm the phase identity of the CdTe and ZnO and to characterize the nanostructures produced in these composite films. Isochronal annealing for 5 min at temperatures up to 800 deg. C further indicated the potential to improve film crystallinity as well as to establish the post-deposition thermal processing limits of stability for the semiconductor phase. The study highlights the significance of ensemble behavior as a means to influence quantum-scale semiconductor optical characteristics of import to the use of such materials as the basis for a variety of optoelectronic devices, including photosensitized heterojunction components in thin film photovoltaics.

Potter, B. G. Jr. [Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85721 (United States); College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States); Beal, R. J.; Allen, C. G. [Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85721 (United States)

2012-02-01T23:59:59.000Z

489

OpTeC Annual Meeting Agenda 1 11 Sept. 2014 Optical Science & Engineering Conference  

E-Print Network [OSTI]

Devices for Polarization Control 9:05 am Tianbo Liu & David Dickensheets MSU Electrical and Computer in an SOFC #12;OpTeC Annual Meeting Agenda 2 11 Sept. 2014 9:40 am Alexander Mikhaylov,a Lauren Bennett

Maxwell, Bruce D.

490

Enhanced Thermoelectric Properties of Solution Grown Bi2Te3-xSex Nanoplatelet Composites  

E-Print Network [OSTI]

is the lattice contributions) and T is average absolute temperature. An ideal thermoelectric material on the efficiency of thermoelectric materials, and hence a decoupling of these parameters is required to improveEnhanced Thermoelectric Properties of Solution Grown Bi2Te3-xSex Nanoplatelet Composites Ajay Soni

Xiong, Qihua

491

DAnTE: a statistical tool for quantitative analysis of -omics data  

Science Journals Connector (OSTI)

......employing the Shapiro-Wilks test and features two non-parametric hypothesis tests (Wilcoxon rank sum test and Kruskal-Wallis test) when the normality assumption fails to hold. 3 SUMMARY DAnTE is designed as a complete downstream analysis......

Ashoka D. Polpitiya; Wei-Jun Qian; Navdeep Jaitly; Vladislav A. Petyuk; Joshua N. Adkins; David G. Camp; II; Gordon A. Anderson; Richard D. Smith

2008-07-01T23:59:59.000Z

492

High thermoelectric performance by resonant dopant indium in nanostructured SnTe  

E-Print Network [OSTI]

From an environmental perspective, lead-free SnTe would be preferable for solid-state waste heat recovery if its thermoelectric figure-of-merit could be brought close to that of the lead-containing chalcogenides. In this ...

Liao, Bolin

493

Study of forward Z + jet production in pp collisions at ?s = 7 TeV  

E-Print Network [OSTI]

A measurement of the Z(? ? [superscript +] ? [superscript ?]) + jet production cross-section in pp collisions at a centre-of-mass energy ?s = 7 TeV is presented. The analysis is based on an integrated luminosity of 1.0 ...

Williams, Michael

494

Could the Wein fireball be associated to the "orphan" TeV flares ?  

E-Print Network [OSTI]

TeV $\\gamma$-ray detections in flaring states without activity in X-rays from blazars have attracted much attention due to the irregularity of these "orphan" flares. Although the synchrotron self-Compton model has been very successful in explaining the spectral energy distribution and spectral variability of these sources, it has not been able to describe these atypical flaring events. On the other hand, an electron-positron pair plasma at the base of the AGN jet was proposed as the mechanism of bulk acceleration of relativistic outflows. This plasma in quasi-themal equilibrium called Wein fireball emits radiation at MeV-peak energies serving as target of accelerated protons. In this work we describe the "orphan" TeV flares presented in blazars 1ES 1959+650 and Mrk421 assuming geometrical considerations in the jet and evoking the interactions of Fermi-accelerated protons and MeV-peak target photons coming from the Wein fireball. After describing successfully these "orphan" TeV flares, we correlate the TeV $\\g...

Fraija, Nissim

2015-01-01T23:59:59.000Z

495

Industrial Upscaling of CdTe/CdS Thin Film Solar Cells , A. Bosioa  

E-Print Network [OSTI]

, with the participation of the Marcegaglia industrial group, IFIS Bank of Venice, the contribution of Ministry 905223. E-mail address: Nicola.Romeo@unipr.it (Nicola Romeo). 1 INTRODUCTION CdTe with its energy gap" which means that only a few microns of the material are needed to absorb 90% of photons with energy

Romeo, Alessandro

496

1. INTRODUCTION Polycrystalline CdTe thin films solar cells have shown long  

E-Print Network [OSTI]

to the solar panel that can be adapted to any kind of shape and is easy to deploy in space. We have developed1. INTRODUCTION Polycrystalline CdTe thin films solar cells have shown long term stable performance for the solar cell, therefore high specific power (ratio of out- put power to the weight) solar cells

Romeo, Alessandro

497

Nuclear structure relevant to neutrinoless double beta decay candidate {sup 130}Te and other recent results  

SciTech Connect (OSTI)

We have undertaken a series of single-nucleon and pair transfer reaction measurements to help constrain calculations of the nuclear matrix elements for neutrinoless double beta decay. In this talk, a short overview of measurements relevant to the {sup 130}Te?{sup 130}Xe system is given. Brief mention is made of other recent and forthcoming results.

Kay, B. P. [Physics Division, Argonne National Laboratory, Illinois 60439 (United States)

2013-12-30T23:59:59.000Z

498

Ann bay lodyans 12 / Se Bryant Freeman ("Tonton Liben") ki pare ti liv sa a  

E-Print Network [OSTI]

a, Bondye fe yon bon ti melanj: li pran bwode ki gen nan pan, di ki gen nan woch, fines ki gen nan ke zwazo, douse ki gen nan siwo myel, mechanste ki gen nan tig, chale ki gen nan dife, fredi ki gen nan lanej. Bondye kontwole yo, sa pa ase.... Yo te viv ansanm pandan kek tan konsa. Men yon jou, msye a al devan Bondye ansanm ak fi a. Li pote I remet Bondye. Li di konsa: "Bondye, m pa kapab viv ak zanmi ou ban mwen an. Li pale san rete, li fatige m twop, menm yon ti poze m pa kab fe. Sa...

Freeman, Bryant C.

2000-01-01T23:59:59.000Z

499

Measuring the Invisible Higgs Width at the 7 and 8 TeV LHC  

E-Print Network [OSTI]

The LHC is well on track toward the discovery or exclusion of a light Standard Model (SM)-like Higgs boson. Such a Higgs has a very small SM width and can easily have large branching fractions to physics beyond the SM, making Higgs decays an excellent opportunity to observe new physics. Decays into collider-invisible particles are particularly interesting as they are theoretically well motivated and relatively clean experimentally. In this work we estimate the potential of the 7 and 8 TeV LHC to observe an invisible Higgs branching fraction. We analyze three channels that can be used to directly study the invisible Higgs branching ratio at the 7 TeV LHC: an invisible Higgs produced in association with (i) a hard jet; (ii) a leptonic Z; and (iii) forward tagging jets. We find that the last channel, where the Higgs is produced via weak boson fusion, is the most sensitive, allowing branching fractions as small as 40% to be probed at 20 inverse fb for masses in the range between 120 and 170 GeV, including in particular the interesting region around 125 GeV. We provide an estimate of the 8 TeV LHC sensitivity to an invisibly-decaying Higgs produced via weak boson fusion and find that the reach is comparable to but not better than the reach at the 7 TeV LHC. We further estimate the discovery potential at the 8 TeV LHC for cases where the Higgs has substantial branching fractions to both visible and invisible final states.

Yang Bai; Patrick Draper; Jessie Shelton

2011-12-19T23:59:59.000Z

500

Optical and electrochemical properties of CuInSe2 and CuInS2?CuInSe2 alloys  

Science Journals Connector (OSTI)

The fundamental optical transitions in single crystals of CuInS2 x Se2 ? 2 x alloys have been studied by electrolyte electroreflectance (EER) spectroscopy. The band gap of the alloys increases nonlinearly with increasing sulphur content corresponding to a bowing parameter 0.14. The flatband potential derived from the EER spectra is in excellent agreement with differential capacitance measurements and determined as ?0.350 V versus the saturated calomel electrode. CuInS2x Se2?2x liquid junction solar cells are reported that exhibit a long wavelength cutoff in the spectral response matching the EER data.

H. Neff; P. Lange; M. L. Fearheiley; K. J. Bachmann

1985-01-01T23:59:59.000Z