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1

Reverse Monte Carlo simulation of Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} glasses  

SciTech Connect (OSTI)

Two-dimensional Monte Carlo of the total pair distribution functions g(r) is determined for Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} alloys, and then it used to assemble the three-dimensional atomic configurations using the reverse Monte Carlo simulation. The partial pair distribution functions g{sub ij}(r) indicate that the basic structure unit in the Se{sub 80}Te{sub 15}Sb{sub 5} glass is di-antimony tri-selenide units connected together through Se-Se and Se-Te chain. The structure of Se{sub 80}Te{sub 20} alloys is a chain of Se-Te and Se-Se in addition to some rings of Se atoms.

Abdel-Baset, A. M.; Rashad, M. [Physics Department, Faculty of Science , Assiut University, Assiut, P.O. Box 71516 (Egypt); Moharram, A. H. [Faculty of Science, King Abdul Aziz Univ., Rabigh Branch, P.O. Box 433 (Saudi Arabia)

2013-12-16T23:59:59.000Z

2

Micro-Raman spectroscopy of mechanically exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2Te3 materials  

E-Print Network [OSTI]

Micro-Raman spectroscopy of mechanically exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2-like" exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2Te3. It is found that crystal symmetry breaking

3

Thermoelectric properties of indium doped PbTe{sub 1-y}Se{sub y} alloys  

SciTech Connect (OSTI)

Lead telluride and its alloys are well known for their thermoelectric applications. Here, a systematic study of PbTe{sub 1-y}Se{sub y} alloys doped with indium has been done. The powder X-Ray diffraction combined with Rietveld analysis confirmed the polycrystalline single phase nature of the samples, while microstructural analysis with scanning electron microscope results showed densification of samples and presence of micrometer sized particles. The temperature dependent transport properties showed that in these alloys, indium neither pinned the Fermi level as it does in PbTe, nor acted as a resonant dopant as in SnTe. At high temperatures, bipolar effect was observed which restricted the zT to 0.66 at 800?K for the sample with 30% Se content.

Bali, Ashoka; Mallik, Ramesh Chandra, E-mail: rcmallik@physics.iisc.ernet.in [Thermoelectric Materials and Devices Laboratory, Department of Physics, Indian Institute of Science, Bangalore 560012, Karnataka (India); Wang, Heng; Snyder, G. Jeffrey [Department of Materials Science, California Institute of Technology, Pasadena, California 91125 (United States)

2014-07-21T23:59:59.000Z

4

Thermoelectric properties of polycrystalline In4Se3 and In4Te3  

SciTech Connect (OSTI)

High thermoelectric performance of a single crystal layered compound In{sub 4}Se{sub 3} was reported recently. We present here an electrical and thermal transport property study over a wide temperature range for polycrystalline samples of In{sub 4}Se{sub 3} and In{sub 4}Te{sub 3}. Our data demonstrate that these materials are lightly doped semiconductors, leading to large thermopower and resistivity. Very low thermal conductivity, below 1 W/m K, is observed. The power factors for In{sub 4}Se{sub 3} and In{sub 4}Te{sub 3} are much smaller when compared with state-of-the-art thermoelectric materials. This combined with the very low thermal conductivity results in the maximum ZT value of less than 0.6 at 700 K for In{sub 4}Se{sub 3}.

Shi, Xun [Optimal Inc., Plymouth, Michigan 48170, USA; Cho, Jung Y [GM R& D and Planning, Warren, Michigan; Salvador, James R. [GM R& D and Planning, Warren, Michigan; Yang, Jihui [General Motors Corporation-R& D; Wang, Hsin [Oak Ridge National Laboratory (ORNL)

2010-01-01T23:59:59.000Z

5

Spray Deposition of High Quality CuInSe2 and CdTe Films: Preprint  

SciTech Connect (OSTI)

A number of different ink and deposition approaches have been used for the deposition of CuInSe2 (CIS), Cu(In,Ga)Se2 (CIGS), and CdTe films. For CIS and CIGS, soluble precursors containing Cu, In, and Ga have been developed and used in two ways to produce CIS films. In the first, In-containing precursor films were sprayed on Mo-coated glass substrates and converted by rapid thermal processing (RTP) to In2Se3. Then a Cu-containing film was sprayed down on top of the In2Se3 and the stacked films were again thermally processed to give CIS. In the second approach, the Cu-, In-, and Ga-containing inks were combined in the proper ratio to produce a mixed Cu-In-Ga ink that was sprayed on substrates and thermally processed to give CIGS films directly. For CdTe deposition, ink consisting of CdTe nanoparticles dispersed in methanol was prepared and used to spray precursor films. Annealing these precursor films in the presence of CdCl2 produced large-grained CdTe films. The films were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). Optimized spray and processing conditions are crucial to obtain dense, crystalline films.

Curtis, C. J.; van Hest, M.; Miedaner, A.; Leisch, J.; Hersh, P.; Nekuda, J.; Ginley, D. S.

2008-05-01T23:59:59.000Z

6

Hydrogen passivation of Se and Te in AlSb M. D. McCluskey and E. E. Haller  

E-Print Network [OSTI]

Hydrogen passivation of Se and Te in AlSb M. D. McCluskey and E. E. Haller Lawrence Berkeley observed local vibrational modes LVM's arising from DX-hydrogen complex in AlSb. Hydrogen was diffused into bulk AlSb:Se and AlSb:Te by annealing in sealed quartz ampoules with either hydrogen gas or methanol CH

McCluskey, Matthew

7

Photoluminescence studies of type-II CdSe/CdTe superlattices  

SciTech Connect (OSTI)

CdSe/CdTe type-II superlattices grown on GaSb substrates by molecular beam epitaxy are studied using time-resolved and steady-state photoluminescence (PL) spectroscopy at 10 K. The relatively long carrier lifetime of 188 ns observed in time-resolved PL measurements shows good material quality. The steady-state PL peak position exhibits a blue shift with increasing excess carrier concentration. Self-consistent solutions of the Schroedinger and Poisson equations show that this effect can be explained by band bending as a result of the spatial separation of electrons and holes, which is critical confirmation of a strong type-II band edge alignment between CdSe and CdTe.

Li Jingjing; Johnson, Shane R.; Wang Shumin; Ding Ding; Ning Cunzheng; Zhang Yonghang [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287-5706 (United States); School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706 (United States); Yin Leijun [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287-5706 (United States); Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Skromme, B. J. [School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706 (United States); Liu Xinyu; Furdyna, Jacek K. [Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

2012-08-06T23:59:59.000Z

8

CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy  

SciTech Connect (OSTI)

CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63 {+-} 0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.

Li Jingjing; Liu Shi; Wang Shumin; Ding Ding; Johnson, Shane R.; Zhang Yonghang [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Liu Xinyu; Furdyna, Jacek K. [Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Smith, David J. [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

2012-03-19T23:59:59.000Z

9

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface  

SciTech Connect (OSTI)

Topological insulators are new states of quantum matter in which surface states residing in the bulk insulating gap of such systems are protected by time-reversal symmetry. The study of such states was originally inspired by the robustness to scattering of conducting edge states in quantum Hall systems. Recently, such analogies have resulted in the discovery of topologically protected states in two-dimensional and three-dimensional band insulators with large spin-orbit coupling. So far, the only known three-dimensional topological insulator is Bi{sub x}Sb{sub 1-x}, which is an alloy with complex surface states. Here, we present the results of first-principles electronic structure calculations of the layered, stoichiometric crystals Sb{sub 2}Te{sub 3}, Sb{sub 2}Se{sub 3}, Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3}. Our calculations predict that Sb{sub 2}Te{sub 3}, Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} are topological insulators, whereas Sb{sub 2}Se{sub 3} is not. These topological insulators have robust and simple surface states consisting of a single Dirac cone at the point. In addition, we predict that Bi{sub 2}Se{sub 3} has a topologically non-trivial energy gap of 0.3 eV, which is larger than the energy scale of room temperature. We further present a simple and unified continuum model that captures the salient topological features of this class of materials.

Zhang, Haijun; /Beijing, Inst. Phys.; Liu, Chao-Xing; /Tsinghua U., Beijing; Qi, Xiao-Liang; /Stanford U., Phys. Dept.; Dai, Xi; Fang, Zhong; /Beijing, Inst. Phys.; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

2010-02-24T23:59:59.000Z

10

DETERMINATION OF BACK CONTACT BARRIER HEIGHT IN Cu(In,Ga)(Se,S)2 AND CdTe SOLAR CELLS  

E-Print Network [OSTI]

DETERMINATION OF BACK CONTACT BARRIER HEIGHT IN Cu(In,Ga)(Se,S)2 AND CdTe SOLAR CELLS Galymzhan T-contact metallization. The input data is the current- voltage (J-V) curves for the solar cell measured over a range point technique and apply it to specific solar-cell examples. The range of Jt that can be practically

Sites, James R.

11

Three-dimensional topological insulators Bi{sub 2}Te{sub 3}, Bi{sub 2}Se{sub 3}, and Bi{sub 2}Te{sub 2}Se - a microwave spectroscopy study  

SciTech Connect (OSTI)

We present results of investigations of three-dimensional topological insulators from a family of bismuth compounds performed in electron spin resonance spectrometer. Next to the standard spin resonance spectra in Bi{sub 2}Se{sub 3} originating from bulk conduction electrons (g{sub Verbar;} = 27.5 ± 0.1 and g{sub ?} = 19.5 ± 0.1), we observed also cyclotron resonance due to topological surface states in Bi{sub 2}Te{sub 3} and non-resonant signal related to weak anti-localization in Bi{sub 2}Te{sub 2}Se. The analysis of the cyclotron resonance signal yields low Fermi velocity equal to 3250 m/s in Bi{sub 2}Te{sub 3}. The phase coherence length determined from weak anti-localization signal equals to 550 nm at low temperatures in Bi{sub 2}Te{sub 2}Se. Relation of the signals to bulk, topological surface or two-dimensional quantum well states is discussed and where possible indicated.

Wolos, A. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland and Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland); Drabinska, A.; Szyszko, S.; Kaminska, M. [Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland); Strzelecka, S. G.; Hruban, A.; Materna, A.; Piersa, M. [Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919 Warsaw (Poland)

2013-12-04T23:59:59.000Z

12

Thin-film CdTe and CuInSe{sub 2} photovoltaic technologies  

SciTech Connect (OSTI)

Total-area conversion efficiency of 15%--15.8% have been achieved for thin-film CdTe and CIS solar cells. Modules with power output of 5--53 W have been demonstrated by several groups world-wide. Critical processes and reaction pathways for achieving excellent PV devices have been eluciated. Research, development and technical issues have been identified, which could result in potential improvements in device and module performance. A 1-kW thin-film CdTe array has been installed and is being tested. Multimegawatt thin-film CdTe manufacturing plants are expected to be completed in 1-2 years.

Ullal, H.S.; Zweibel, K.; von Roedern, B.G.

1993-08-01T23:59:59.000Z

13

Studies of sputtered CdTe and CdSe solar cells.  

E-Print Network [OSTI]

??CdTe has recently become the most commercially successful polycrystalline thin filmsolar module material. Its low cost, large-area solar module is reshaping the silicondominatedsolar panel market;… (more)

Kwon, Dohyoung

2012-01-01T23:59:59.000Z

14

X-ray diffraction study of (TlInSe{sub 2}){sub 1-x}(TlGaTe{sub 2}){sub x} crystal system  

SciTech Connect (OSTI)

The crystallographic and dynamic characteristics of TlInSe{sub 2} and TlGaTe{sub 2} crystals have been studied by X-ray diffraction in the temperature range of 85-320 K. The temperature dependences of the unit-cell parameters a of TlInSe{sub 2} and TlGaTe{sub 2} crystals, as well as their coefficients of thermal expansion along the [100] direction, are determined. The concentration dependences of the unit-cell parameters a and c for (TlInSe{sub 2}){sub 1-x}(TlGaTe{sub 2}){sub x} crystals are measured. Anomalies are found in the temperature dependences of the unit-cell parameters a and, correspondingly, the coefficient of thermal expansion, indicating the existence of phase transitions in TlInSe{sub 2} and TlGaTe{sub 2} crystals.

Sheleg, A. U., E-mail: sheleg@ifttp.bas-net.by; Zub, E. M.; Yachkovskii, A. Ya. [National Academy of Sciences of Belarus, State Scientific and Production Association, Scientific and Practical Materials Research Center (Belarus); Mustafaeva, S. N.; Kerimova, E. M. [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan)

2012-03-15T23:59:59.000Z

15

Syntheses, crystal structures and characterizations of BaZn(SeO{sub 3}){sub 2} and BaZn(TeO{sub 3})Cl{sub 2}  

SciTech Connect (OSTI)

Two new barium zinc selenite and tellurite, namely, BaZn(SeO{sub 3}){sub 2} and BaZn(TeO{sub 3})Cl{sub 2}, have been synthesized by the solid state reaction. The structure of BaZn(SeO{sub 3}){sub 2} features double chains of [Zn(SeO{sub 3}){sub 2}]{sup 2-} anions composed of four- and eight-member rings which are alternatively along a-axis. The double chains of [Zn{sub 2}(TeO{sub 3}){sub 2}Cl{sub 3}]{sup 3-} anions in BaZn(TeO{sub 3})Cl{sub 2} are formed by Zn{sub 3}Te{sub 3} rings in which each tellurite group connects with three ZnO{sub 3}Cl tetrahedra. BaZn(SeO{sub 3}){sub 2} and BaZn(TeO{sub 3})Cl{sub 2} are wide bandgap semiconductors based on optical diffuse reflectance spectrum measurements. -- Graphical abstract: Two new barium zinc selenite and tellurite, namely, BaZn(SeO{sub 3}){sub 2} and BaZn(TeO{sub 3})Cl{sub 2}, have been synthesized by solid state reaction. The structure of BaZn(SeO{sub 3}){sub 2} features 1D double chains of [Zn(SeO{sub 3}){sub 2}]{sup 2-} anions composed of four- and eight-member rings which are alternatively along a-axis. The 1D double chains of [Zn{sub 2}(TeO{sub 3}){sub 2}Cl{sub 3}]{sup 3-} anions in BaZn(TeO{sub 3})Cl{sub 2} are formed by Zn{sub 3}Te{sub 3} rings in which each tellurite group connects with one ZnO{sub 3}Cl and two ZnO{sub 2}Cl{sub 2} tetrahedra. BaZn(SeO{sub 3}){sub 2} and BaZn(TeO{sub 3})Cl{sub 2} are wide bandgap semiconductors based on optical diffuse reflectance spectrum measurements.

Jiang Hailong [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, and the Graduate School of the Chinese Academy of Sciences, Fuzhou 350002 (China); Feng Meiling [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, and the Graduate School of the Chinese Academy of Sciences, Fuzhou 350002 (China); Mao Jianggao [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, and the Graduate School of the Chinese Academy of Sciences, Fuzhou 350002 (China)]. E-mail: mjg@ms.fjirsm.ac.cn

2006-06-15T23:59:59.000Z

16

Investigation into the growth and structure of thin-film solid solutions of iron-based superconductors in the FeSe{sub 0.92}-FeSe{sub 0.5}Te{sub 0.5} system  

SciTech Connect (OSTI)

Thin films of FeSe{sub 0.92} and FeSe{sub 0.5}Te{sub 0.5} iron chalcogenide superconductors and solid solutions containing these components in different ratios have been grown on the surface of LaAlO{sub 3} (10 1-bar 2) crystals by pulsed laser deposition. Films of solid solutions have been deposited by simultaneous laser ablation from two targets of the FeSe{sub 0.92} and FeSe{sub 0.5}Te{sub 0.5} stoichiometric compositions onto one substrate. An X-ray diffraction study of the film structure shows that the films grown are epitaxial and their lattice parameters regularly vary with the ratio of the deposited components, which was controllably varied by changing the ablation intensities from the targets.

Stepantsov, E. A., E-mail: stepantsov@ns.cryst.ras.ru [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Kazakov, S. M.; Belikov, V. V. [Moscow State University (Russian Federation)] [Moscow State University (Russian Federation); Makarova, I. P. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)] [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Arpaia, R.; Gunnarsson, R.; Lombardi, F. [Chalmers University of Technology, Department of Microtechnology and Nanoscience (Sweden)] [Chalmers University of Technology, Department of Microtechnology and Nanoscience (Sweden)

2013-09-15T23:59:59.000Z

17

NONLINEAR OPTICAL EFFECTS IN ROTATIONALLY-TWINNED CRYSTALS: AN EVALUATION OF CdTe, ZnTe AND ZnSe  

E-Print Network [OSTI]

-frequency and wavelength- tunable radiation from the ultraviolet to the far infrared region of the spectrum. Typical optical coefficients, (iii) the crystal must resist damage at the high power densities required405 NONLINEAR OPTICAL EFFECTS IN ROTATIONALLY-TWINNED CRYSTALS: AN EVALUATION OF CdTe, ZnTe AND Zn

Boyer, Edmond

18

Structural and dynamical properties of Bridgman-grown CdSe[subscript x]Te[subscript 1?x] (0  

E-Print Network [OSTI]

Measurements of the Raman scattering and extended x-ray-absorption fine-structure (EXAFS) spectroscopy are reported on a series of Bridgman-grown zinc-blende CdTe[subscript 1?x]Se[subscript x] (0.35 ? x > 0.05) ternary ...

Talwar, Devki N.

19

CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} and CdTe PV solar cells  

SciTech Connect (OSTI)

Higher indium proportion in the first precursor was employed to eliminate pits in CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} films prepared by two Se-vapor selenizations of metallic precursors. CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} films had large, faceted grains, and a near-optimum composition Cu:In:Ga:Se 24.25:22.21:4.40:49.14. Ga incorporated using a Cu-Ga(22 at. {percent}) alloy target was enhanced by optimizing the time-temperature profiles of selenizations. CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} solar cells gave {ital V}{sub oc} of 451.8 mV, {ital J}{sub sc} of 34.5 mA, FF of 57.87{percent}, total area efficiency of 9.02{percent}. CdTe thin films were prepared by heat treatment of magnetron-sputtered elemental Cd/Te stacks. Formation of extraneous oxide phases was avoided by optimizing ambients, temperature, and CdCl{sub 2} treatment. CdTe solar cells gave maximum {ital V}{sub oc} of {approximately}600 mV, {ital J}{sub sc} of {approximately}5 mA.cm{sup {minus}2}, very low FF and efficiency probably due to blocking layer or junction away from CdS{backslash}CdTe interface. {copyright} {ital 1996 American Institute of Physics.}

Dhere, N.G. [Florida Solar Energy Center, 300 State Rd 401, Cape Canaveral, Florida 32920-4099 (United States)

1996-01-01T23:59:59.000Z

20

Solar-energy conversion by combined photovoltaic converters with CdTe and CuInSe{sub 2} base layers  

SciTech Connect (OSTI)

The possibility of the combined use of bifacial thin-film solar cells based on CdTe and frontal solar cells with a CuInSe{sub 2} base layer in tandem structures is experimentally confirmed. It is found that, for the use of bifacial solar cells based on cadmium telluride in a tandem structure, the optimal thickness of their base layer should be 1 ?m. The gain in the efficiency of the tandem structure, compared with an individual CuInSe{sub 2}-based solar cell, is 1.8% in the case of series-connected solar cells and 1.3%, for parallel-connected.

Khrypunov, G. S., E-mail: khrip@ukr.net; Sokol, E. I. [National Technical University “Kharkiv Polytechnic Institute” (Ukraine); Yakimenko, Yu. I. [National Technical University “Kyiv Polytechnic Institute”, Research Institute of Applied Electronics (Ukraine); Meriuts, A. V. [National Technical University “Kharkiv Polytechnic Institute” (Ukraine); Ivashuk, A. V. [National Technical University “Kyiv Polytechnic Institute”, Research Institute of Applied Electronics (Ukraine); Shelest, T. N. [National Technical University “Kharkiv Polytechnic Institute” (Ukraine)

2014-12-15T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Comparison of crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te nanocrystalline thin films: Effects of homogeneous irradiation with an electron beam  

SciTech Connect (OSTI)

The effects of homogenous electron beam (EB) irradiation on the crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te thin films were investigated. Both types of thin films were prepared by flash evaporation, after which homogeneous EB irradiation was performed at an acceleration voltage of 0.17?MeV. For the n-type thin films, nanodots with a diameter of less than 10?nm were observed on the surface of rice-like nanostructures, and crystallization and crystal orientation were improved by EB irradiation. The resulting enhancement of mobility led to increased electrical conductivity and thermoelectric power factor for the n-type thin films. In contrast, the crystallization and crystal orientation of the p-type thin films were not influenced by EB irradiation. The carrier concentration increased and mobility decreased with increased EB irradiation dose, possibly because of the generation of defects. As a result, the thermoelectric power factor of p-type thin films was not improved by EB irradiation. The different crystallization behavior of the n-type and p-type thin films is attributed to atomic rearrangement during EB irradiation. Selenium in the n-type thin films is more likely to undergo atomic rearrangement than the other atoms present, so only the crystallinity of the n-type Bi-Se-Te thin films was enhanced.

Takashiri, Masayuki, E-mail: takashiri@tokai-u.jp; Imai, Kazuo; Uyama, Masato; Nishi, Yoshitake [Department of Materials Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Hagino, Harutoshi; Miyazaki, Koji [Department of Mechanical and Control Engineering, Kyushu Institute of Technology, 1-1 Sensui, Tobata-ku, Kitakyushu 804-8550 (Japan); Tanaka, Saburo [Department of Mechanical Engineering, College of Engineering, Nihon University, Nakagawara, Tokusada, Tamuramachi, Koriyama, Fukushima 963-8642 (Japan)

2014-06-07T23:59:59.000Z

22

Structural properties of Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} topological insulators grown by molecular beam epitaxy on GaAs(001) substrates  

SciTech Connect (OSTI)

Thin films of Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} have been grown on deoxidized GaAs(001) substrates using molecular beam epitaxy. Cross-sectional transmission electron microscopy established the highly parallel nature of the Te(Se)-Bi-Te(Se)-Bi-Te(Se) quintuple layers deposited on the slightly wavy GaAs substrate surface and the different crystal symmetries of the two materials. Raman mapping confirmed the presence of the strong characteristic peaks reported previously for these materials in bulk form. The overall quality of these films reveals the potential of combining topological insulators with ferromagnetic semiconductors for future applications.

Liu, X.; Leiner, J.; Dobrowolska, M.; Furdyna, J. K. [Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Smith, D. J. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States); Fan, J. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States); Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); Zhang, Y.-H. [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Cao, H.; Chen, Y. P. [Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States); Kirby, B. J. [Center for Neutron Research, NIST, Gaithersburg, Maryland 20899 (United States)

2011-10-24T23:59:59.000Z

23

Surface and substrate induced effects on thin films of the topological insulators Bi2Se3 and Bi2Te3  

SciTech Connect (OSTI)

Based on van der Waals density functional calculations, we have studied few-quintuple-layer (QL) films of Bi2Se3 and Bi2Te3. The separation between the QLs near the surface is found to have a large increase after relaxation, whereas, the separation between the inner QLs is smaller and approaches the bulk value as the thickness grows, showing a two-dimensional to three-dimensional structural crossover. Accordingly, the surface Dirac cone of the Bi2Se3 film is evidently gapped for small thicknesses (two to four QLs), and the gap is reduced and, finally, is closed with the increasing thickness, agreeing well with the experiments. We further studied the substrate effect by investigating the Bi2Se3/graphene system. It is found that the underlying graphene induces a giant thickness-dependent Rashba splitting and Dirac point shift. Because Bi2Te3 films have smaller relative inter-QL expansion and stronger spin-orbit coupling, the topological features start to appear in the film as thin as two QLs in good accord with the experiments.

Liu, Wenliang [Xiangtan University, Xiangtan Hunan, China; Peng, Xiangyang [Xiangtan University, Xiangtan Hunan, China; Wei, Xiaolin [Xiangtan University, Xiangtan Hunan, China; Yang, Hong [Xiangtan University, Xiangtan Hunan, China; Stocks, George Malcolm [ORNL; Zhong, Jianxin [Xiangtan University, Xiangtan Hunan, China

2013-01-01T23:59:59.000Z

24

Ballistic performance comparison of monolayer transition metal dichalcogenide MX{sub 2} (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors  

SciTech Connect (OSTI)

We study the transport properties of monolayer MX{sub 2} (M?=?Mo, W; X?=?S, Se, Te) n- and p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green's function simulations with an atomistic tight-binding Hamiltonian with hopping potentials obtained from density functional theory. We discuss the subthreshold slope, drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX{sub 2} MOSFETs. We also report the possibility of negative differential resistance behavior in the output characteristics of nanoscale monolayer MX{sub 2} MOSFETs.

Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K. [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)

2014-02-28T23:59:59.000Z

25

PUBLISHED ONLINE: 10 MAY 2009 | DOI: 10.1038/NPHYS1270 Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3  

E-Print Network [OSTI]

ARTICLES PUBLISHED ONLINE: 10 MAY 2009 | DOI: 10.1038/NPHYS1270 Topological insulators in Bi2Se3-Liang Qi3 , Xi Dai1 , Zhong Fang1 and Shou-Cheng Zhang3 * Topological insulators are new states of quantum of topologically protected states in two-dimensional and three-dimensional band insulators with large spin

Loss, Daniel

26

Thermoelectric properties of n-type Bi{sub 2}(Te{sub 1{minus}x}Se{sub x}){sub 3} fabricated by mechanical alloying and hot pressing  

SciTech Connect (OSTI)

Thermoelectric properties of polycrystalline Bi{sub 2}(Te{sub 1{minus}x}Se{sub x}){sub 3} (0.05 {le} x {le} 0.25), fabricated by mechanical alloying and hot pressing, have been investigated. Formation of n-type Bi{sub 2}(Te{sub 0.9}Se{sub 0.1}){sub 3} alloy powders was completed by mechanical alloying for 3 hours at ball-to-material ratio of 5:1, and processing time for Bi{sub 2}(Te{sub 1{minus}x}Se{sub x}){sub 3} formation increased with Bi{sub 2}Se{sub 3} content x. Figure-of-merit of Bi{sub 2}(Te{sub 0.9}Se{sub 0.1}) was markedly increased by hot pressing at temperatures above 450 C, and maximum value of 1.9 x 10{sup {minus}3}/K was obtained by hot pressing at 550 C. With addition of 0.015 wt% Bi as acceptor dopant, figure-of-merit of Bi{sub 2}(Te{sub 0.9}Se{sub 0.1}){sub 3} was hot pressed at 550 C, could be improved to 2.1 x 10{sup {minus}3}/K. When Bi{sub 2}(Te{sub 1{minus}x}Se{sub x}){sub 3} was hot pressed at 550 C, figure-of-merit increased from 1.14 x 10{sup {minus}3}/K to 1.92 x 10{sup {minus}3}/K with increasing Bi{sub 2}Se{sub 3} content x from 0.05 to 0.15, and then decreased to 1.30 x 10{sup {minus}3}/K for x = 0.25 composition.

Kim, H.J.; Choi, J.S.; Oh, T.S.; Hyun, D.B.

1997-07-01T23:59:59.000Z

27

Mechanical and thermal properties of h-MX{sub 2} (M?=?Cr, Mo, W; X?=?O, S, Se, Te) monolayers: A comparative study  

SciTech Connect (OSTI)

Using density functional theory, we obtain the mechanical and thermal properties of MX{sub 2} monolayers (where M?=?Cr, Mo, W and X?=?O, S, Se, Te). The ?-centered phonon frequencies (i.e., A{sub 1}, A{sub 2}{sup ?}, E?, and E?), relative frequency values of A{sub 1}, and E? modes, and mechanical properties (i.e., elastic constants, Young modulus, and Poisson's ratio) display a strong dependence on the type of metal and chalcogenide atoms. In each chalcogenide (metal) group, transition-metal dichalcogenides (TMDCs) with W (O) atom are found to be much stiffer. Consistent with their stability, the thermal expansion of lattice constants for TMDCs with O (Te) is much slower (faster). Furthermore, in a heterostructure of these materials, the difference of the thermal expansion of lattice constants between the individual components becomes quite tiny over the whole temperature range. The calculated mechanical and thermal properties show that TMDCs are promising materials for heterostructures.

Çak?r, Deniz, E-mail: deniz.cakir@uantwerpen.be; Peeters, François M., E-mail: francois.peeters@uantwerpen.be [Department of Physics, University of Antwerp, 2610 Antwerpen (Belgium); Sevik, Cem, E-mail: csevik@anadolu.edu.tr [Department of Mechanical Engineering, Faculty of Engineering, Anadolu University, Eskisehir TR 26555 (Turkey)

2014-05-19T23:59:59.000Z

28

Effect of carrier density and valence states on superconductivity of oxygen annealed Fe{sub 1.06}Te{sub 0.6}Se{sub 0.4} single crystals  

SciTech Connect (OSTI)

The variations of carrier density and valence states in oxygen annealed Fe{sub 1.06}Te{sub 0.6}Se{sub 0.4} single crystals were studied systematically. It was found that the carrier density n{sub H} increases after oxygen annealing by Hall coefficient measurements. The X-ray photoelectron spectroscopy experiments reveal that the oxygen annealing changes Fe{sup 0} and Te{sup 0} states to Fe{sup 2+/3+} and Te{sup 4+}, respectively, while the valence variation of Se is negligible. Our results indicate that the improvement of superconductivity, such as the zero resistance transition temperature T{sub c}{sup zero}, shielding and Meissner fraction value 4?? and upper critical field H{sub c2}, could be closely related to the proper manipulation of n{sub H} and the valence states by oxygen annealing in the system.

Su, T. S.; Yin, Y. W., E-mail: yyw@ustc.edu.cn, E-mail: lixg@ustc.edu.cn; Teng, M. L.; Gong, Z. Z.; Zhang, M. J.; Li, X. G., E-mail: yyw@ustc.edu.cn, E-mail: lixg@ustc.edu.cn [Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei 230026 (China)

2013-11-14T23:59:59.000Z

29

Syntheses, crystal structures and optical properties of the first strontium selenium(IV) and tellurium(IV) oxychlorides: Sr{sub 3}(SeO{sub 3})(Se{sub 2}O{sub 5})Cl{sub 2} and Sr{sub 4}(Te{sub 3}O{sub 8})Cl{sub 4}  

SciTech Connect (OSTI)

Two new quaternary strontium selenium(IV) and tellurium(IV) oxychlorides, namely, Sr{sub 3}(SeO{sub 3})(Se{sub 2}O{sub 5})Cl{sub 2} and Sr{sub 4}(Te{sub 3}O{sub 8})Cl{sub 4}, have been prepared by solid-state reaction. Sr{sub 3}(SeO{sub 3})(Se{sub 2}O{sub 5})Cl{sub 2} features a three-dimensional (3D) network structure constructed from strontium(II) interconnected by Cl{sup -}, SeO{sub 3}{sup 2-} as well as Se{sub 2}O{sub 5}{sup 2-} anions. The structure of Sr{sub 4}(Te{sub 3}O{sub 8})Cl{sub 4} features a 3D network in which the strontium tellurium oxide slabs are interconnected by bridging Cl{sup -} anions. The diffuse reflectance spectrum measurements and results of the electronic band structure calculations indicate that both compounds are wide band-gap semiconductors. - Graphical abstract: Solid-state reactions of SrO, SrCl{sub 2}, and SeO{sub 2} or TeO{sub 2} in different molar ratios and under different temperatures lead to two new strontium selenium(IV) or tellurium(IV) oxychlorides with two different types of structures, namely, Sr{sub 3}(SeO{sub 3})(Se{sub 2}O{sub 5})Cl{sub 2} and Sr{sub 4}(Te{sub 3}O{sub 8})Cl{sub 4}. Both compounds are wide band-gap semiconductors based on the diffuse reflectance spectra and the electronic band structures.

Jiang Hailong [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100039 (China); Mao Jianggao [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002 (China)], E-mail: mjg@fjirsm.ac.cn

2008-02-15T23:59:59.000Z

30

Microstructural and thermoelectric properties of p-type Te-doped Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} and n-type SbI{sub 3}-doped Bi{sub 2}Te{sub 2.85}Se{sub 0.15} compounds  

SciTech Connect (OSTI)

The p-type Te-doped Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} and n-type SbI{sub 3}-doped Bi{sub 2}Te{sub 2.85}Se{sub 0.15} thermoelectric compounds were fabricated by hot pressing in the temperature range of 380 to 440 C under 200 MPa in Ar. Both the compounds were highly dense and showed high crystalline quality. The grains of the compounds were preferentially oriented and contained many dislocations through the hot pressing. The fracture path followed the transgranular cleavage planes, which are perpendicular to the c-axis. In addition, with increasing the pressing temperature, the figure of merit was increased. The highest values of figure of merit for the p- and n-type compounds, which were obtained at 420 C, were 2.69 x 10{sup {minus}3}/K and 2.35 x 10{sup {minus}3}/K, respectively.

Seo, J.; Park, K.; Lee, C.; Kim, J.

1997-07-01T23:59:59.000Z

31

Structural and conductivity studies of CsK(SO{sub 4}){sub 0.32}(SeO{sub 4}){sub 0.68}Te(OH){sub 6}  

SciTech Connect (OSTI)

The compound CsK(SO{sub 4}){sub 0.32}(SeO{sub 4}){sub 0.68}Te(OH){sub 6} crystallizes in the monoclinic P2{sub 1}/n space group. It was analyzed, at room temperature, using X-ray diffractometer data. The main feature of these atomic arrangements is the coexistence of three and different anions (SO{sub 4}{sup 2-}, SeO{sub 4}{sup 2-} and TeO{sub 6}{sup 6-}groups) in the unit cell, connected by hydrogen bonds which make the building of the crystal. The thermal analysis of the title compound shows three distinct endothermal peaks at 435, 460 and 475 K. Complex impedance measurements are performed on this material as a function of both temperature and frequency. The electric conduction has been studied. The temperature dependence on the conductivity indicates that the sample became an ionic conductor at high temperature. - Graphical abstract: Projection of crystal structure CsK(SO{sub 4}){sub 0.32}(SeO{sub 4}){sub 0.68}Te(OH){sub 6} on the ab plane. Highlights: Black-Right-Pointing-Pointer We have studied the results of the crystal structure of the new mixed compound. Black-Right-Pointing-Pointer We have characterized the phase transition observed in DSC curve. Black-Right-Pointing-Pointer The protonic conduction in our material is probably due to a hopping mechanism.

Djemel, M., E-mail: jmal_manel@yahoo.fr [Laboratoire de Chimie Inorganique, Universite de Sfax, Faculte des Sciences de Sfax, BP 1171, 3000 Sfax (Tunisia); Abdelhedi, M., E-mail: m_abdelhedi2002@yahoo.fr [Laboratoire de Chimie Inorganique, Universite de Sfax, Faculte des Sciences de Sfax, BP 1171, 3000 Sfax (Tunisia); Laboratoire Leon Brouillon, CE/Saclay, 91191 Gif-Sur-Yvette Cedex (France); Zouari, N., E-mail: bizrirl@yahoo.fr [Laboratoire de l'Etat solide, Universite de Sfax, Faculte des Sciences de Sfax, BP 1171, 3000 Sfax (Tunisia); Dammak, M., E-mail: meddammak@yahoo.fr [Laboratoire de Chimie Inorganique, Universite de Sfax, Faculte des Sciences de Sfax, BP 1171, 3000 Sfax (Tunisia); Kolsi, A.W., E-mail: kolsi_abdelhwaheb@yahoo.fr [Laboratoire de Chimie Inorganique, Universite de Sfax, Faculte des Sciences de Sfax, BP 1171, 3000 Sfax (Tunisia)

2012-12-15T23:59:59.000Z

32

Observation of an electron band above the Fermi level in FeTe{sub 0.55}Se{sub 0.45} from in-situ surface doping  

SciTech Connect (OSTI)

We used in-situ potassium (K) evaporation to dope the surface of the iron-based superconductor FeTe{sub 0.55}Se{sub 0.45}. The systematic study of the bands near the Fermi level confirms that electrons are doped into the system, allowing us to tune the Fermi level of this material and to access otherwise unoccupied electronic states. In particular, we observe an electron band located above the Fermi level before doping that shares similarities with a small three-dimensional pocket observed in the cousin, heavily electron-doped KFe{sub 2?x}Se{sub 2} compound.

Zhang, P.; Ma, J.; Qian, T. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Richard, P., E-mail: p.richard@iphy.ac.cn; Ding, H., E-mail: dingh@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Xu, N. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Paul Scherrer Institut, Swiss Light Source, CH-5232 Villigen PSI (Switzerland); Xu, Y.-M. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Fedorov, A. V.; Denlinger, J. D. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Gu, G. D. [Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973 (United States)

2014-10-27T23:59:59.000Z

33

Quasiparticle self-consistent GW calculations for PbS, PbSe, and PbTe: Band structure and pressure coefficients  

E-Print Network [OSTI]

and in solar-energy panels.8 With Tl doping PbTe may even exhibit superconductivity.9,10 The lead chalcogenides of states. The pressure-induced gap closure leads to linear Dirac-type band dispersions around the L point states being interchanged.19,25 These states have the same L6 symmetry but different parity and orbital

Svane, Axel Torstein

34

Interface Driven Energy Filtering of Thermoelectric Power in Spark Plasma Sintered Bi2Te2.7Se0.3 Nanoplatelet Composites  

E-Print Network [OSTI]

and electrical and thermal conductivities is essential for the high performance of thermoelectric materials. Bulk, the electronic and lattice contributions to the thermal conductivity.5 Thus a good TE material should have a high Seebeck coefficient, a high electrical conductivity, and a low thermal conductivity. Combining

Xiong, Qihua

35

Theoretical study of influencing factors on the dispersion of bulk band-gap edges and the surface states in topological insulators Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3}  

SciTech Connect (OSTI)

The dispersion of the band-gap edge states in bulk topological insulators Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} is considered within density functional theory. The dependences of this dispersion both on the approximation used for an exchange-correlation functional at fixed unit cell parameters and atomic positions and on these parameters and positions that are obtained upon structural relaxation performed using a certain approximated functional are analyzed. The relative position of the Dirac point of topologically protected surface states and the valence band maximum in the surface electronic structure of the topological insulators is discussed.

Rusinov, I. P., E-mail: rusinovip@gmail.com; Nechaev, I. A. [Tomsk State University (Russian Federation); Chulkov, E. V. [Donostia International Physics Center (DIPC) (Spain)

2013-06-15T23:59:59.000Z

36

Lattice location and local magnetism of recoil implanted Fe impurities in wide and narrow band semiconductors CdTe, CdSe, and InSb: Experiment and theory  

SciTech Connect (OSTI)

Employing the time differential perturbed angular distribution method, we have measured local susceptibility and spin relaxation rate of {sup 54}Fe nuclei implanted in III-V and II-VI semiconductors, CdTe, CdSe, and InSb. The magnetic response of Fe, identified to occupy the metal as well as the semi-metal atom sites, exhibit Curie-Weiss type susceptibility and Korringa like spin relaxation rate, revealing the existence of localized moments with small spin fluctuation temperature. The experimental results are supported by first principle electronic structure calculations performed within the frame work of density functional theory.

Mohanta, S. K.; Mishra, S. N. [Tata Institute of Fundamental Research (TIFR), Homi Bhabha Road, Mumbai 400005 (India)

2014-05-07T23:59:59.000Z

37

Y{sub 2}MoSe{sub 3}O{sub 12} and Y{sub 2}MoTe{sub 3}O{sub 12}: Solid-state synthesis, structure determination, and characterization of two new quaternary mixed metal oxides containing asymmetric coordination environment  

SciTech Connect (OSTI)

Two new quaternary yttrium molybdenum selenium/tellurium oxides, Y{sub 2}MoSe{sub 3}O{sub 12} and Y{sub 2}MoTe{sub 3}O{sub 12} have been prepared by standard solid-state reactions using Y{sub 2}O{sub 3}, MoO{sub 3}, and SeO{sub 2} (or TeO{sub 2}) as reagents. Single-crystal X-ray diffraction was used to determine the crystal structures of the reported materials. Although both of the materials contain second-order Jahn–Teller (SOJT) distortive cations and are stoichiometrically similar, they reveal different structural features: while Y{sub 2}MoSe{sub 3}O{sub 12} shows a three-dimensional framework consisting of YO{sub 8}, MoO{sub 6}, and SeO{sub 3} groups, Y{sub 2}MoTe{sub 3}O{sub 12} exhibits a layered structure composed of YO{sub 8}, MoO{sub 4}, TeO{sub 3}, and TeO{sub 4} polyhedra. With the Mo{sup 6+} cations in Y{sub 2}MoSe{sub 3}O{sub 12}, a C{sub 3}-type intraoctahedral distortion toward a face is observed, in which the direction of the out-of-center distortion for Mo{sup 6+} is away from the oxide ligand linked to a Se{sup 4+} cation. The Se{sup 4+} and Te{sup 4+} cations in both materials are in asymmetric coordination environment attributed to the lone pairs. Elemental analyses, infrared spectroscopy, thermal analyses, intraoctahedral distortions, and dipole moment calculations for the compounds are also presented. - Graphical abstract: Y{sub 2}MoSe{sub 3}O{sub 12} reveals a three-dimensional framework consisting of YO{sub 8}, MoO{sub 6}, and SeO{sub 3} polyhedra, whereas Y{sub 2}MoTe{sub 3}O{sub 12} exhibits a layered structure composed of YO{sub 8}, MoO{sub 4}, TeO{sub 3}, and TeO{sub 4} groups. - Highlights: • Two new selenite and tellurite (Y{sub 2}MoQ{sub 3}O{sub 12}; Q=Se and Te) are synthesized. • Y{sub 2}MoQ{sub 3}O{sub 12} contain second-order Jahn–Teller distortive cations in asymmetric environments. • The intra-octahedral distortion of the Mo{sup 6+} is influenced by the Se{sup 4+}.

Bang, Seong-eun; Pan, Zhi; Kim, Yeong Hun; Lee, Dong Woo; Ok, Kang Min, E-mail: kmok@cau.ac.kr

2013-12-15T23:59:59.000Z

38

Effect of fluctuations on electron and phonon processes and thermodynamic parameters of Ag{sub 2}Te and Ag{sub 2}Se in the region of phase transition  

SciTech Connect (OSTI)

Temperature dependences of electrical conductivity {sigma}, thermoelectric power {alpha}, results of differential thermal analysis {delta}T{sub y}, thermal conductivity {chi}, temperature conductivity {kappa}, and heat capacity C{sub p} were studied in Ag{sub 2}Te and Ag{sub 2}Se semiconductors in the region of the phase transition. Two extrema are observed in the temperature dependence {chi}(T): a maximum in the region of the {alpha}' {sup {yields}} {beta}' transition and a minimum in the region of the {beta}' {sup {yields}} {beta} transition; these extrema are caused by the similar dependence C{sub p}(T). It is shown that the {alpha} {sup {yields}} {alpha}' and {beta}' {sup {yields}} {beta} transitions are displacement transitions, while the {alpha}' {sup {yields}} {beta}' transition is of reconstruction type. It is established that the disorder parameter {eta} in silver chalcogenides is highly smeared in the region of the phase transition; therefore, disordering of phases at the point of the phase transition is incomplete: 73, 62, and 48% in Ag{sub 2}Te, Ag{sub 2}Se, and Ag{sub 2}S, respectively. The minimum volumes V{sub ph} for new phases are calculated; it is shown that the value of V{sub ph} in displacement transitions is larger than in the reconstruction-type transitions.

Aliev, S. A.; Aliev, F. F. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)], E-mail: farzali@physics.ab.az

2008-04-15T23:59:59.000Z

39

Determination of lateral size distribution of type-II ZnTe/ZnSe stacked submonolayer quantum dots via spectral analysis of optical signature of the Aharanov-Bohm excitons  

SciTech Connect (OSTI)

For submonolayer quantum dot (QD) based photonic devices, size and density of QDs are critical parameters, the probing of which requires indirect methods. We report the determination of lateral size distribution of type-II ZnTe/ZnSe stacked submonolayer QDs, based on spectral analysis of the optical signature of Aharanov-Bohm (AB) excitons, complemented by photoluminescence studies, secondary-ion mass spectroscopy, and numerical calculations. Numerical calculations are employed to determine the AB transition magnetic field as a function of the type-II QD radius. The study of four samples grown with different tellurium fluxes shows that the lateral size of QDs increases by just 50%, even though tellurium concentration increases 25-fold. Detailed spectral analysis of the emission of the AB exciton shows that the QD radii take on only certain values due to vertical correlation and the stacked nature of the QDs.

Ji, Haojie; Dhomkar, Siddharth; Roy, Bidisha; Kuskovsky, Igor L. [Department of Physics, Queens College of CUNY, Queens, New York 11367 (United States); The Graduate Center of CUNY, New York, New York 10016 (United States); Shuvayev, Vladimir [Department of Physics, Queens College of CUNY, Queens, New York 11367 (United States); Deligiannakis, Vasilios; Tamargo, Maria C. [The Graduate Center of CUNY, New York, New York 10016 (United States); Department of Chemistry, City College of CUNY, New York, New York 10031 (United States); Ludwig, Jonathan [National High Magnetic Field Laboratory, Tallahassee, Florida 32310 (United States); Department of Physics, Florida State University, Tallahassee, Florida 32306 (United States); Smirnov, Dmitry [National High Magnetic Field Laboratory, Tallahassee, Florida 32310 (United States); Wang, Alice [Evans Analytical Group, Sunnyvale, California 94086 (United States)

2014-10-28T23:59:59.000Z

40

Studies on the Bi[subscript 2]Te[subscript 3]–Bi[subscript 2]Se[subscript 3]–Bi[subscript 2]S[subscript 3] system for mid-temperature thermoelectric energy conversion  

E-Print Network [OSTI]

Bismuth telluride (Bi[subscript 2]Te[subscript 3]) and its alloys have been widely investigated as thermoelectric materials for cooling applications at around room temperature. We report a systematic study on many compounds ...

Liu, Weishu

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Mechanical and Electrical Properties of CdTe Tetrapods Studied by Atomic Force Microscopy  

E-Print Network [OSTI]

Electrical Properties of CdTe Tetrapods Studied by Atomicelectrical properties of CdTe tetrapod-shaped nanocrystalsIntroduction CdSe and CdTe nanocrystals possess interesting

2008-01-01T23:59:59.000Z

42

directory of reSeArcherS  

E-Print Network [OSTI]

Applied ScienceS directory of reSeArcherS SPRING 2014 DIRECTORY #12;2 " WelcoMetothe fAcUlty of Applied ScienceS, Where We Are coMMitted to eXcellence in teAchinG, reSeArch And innovAtion.thiS directory

43

directory of reSeArcherS  

E-Print Network [OSTI]

Applied ScienceS directory of reSeArcherS SPRING 2013 DIRECTORY #12;2 " WelcoMetothe fAcUlty of Applied ScienceS, Where We Are coMMitted to eXcellence in teAchinG And reSeArch. thiS directory Will ASSi

Kavanagh, Karen L.

44

Sta te a n d E v e n ts fo r W e b Se r v ic e s: A C o m p a r iso n o f F iv e W S-R e so u r c e F r a m e w o r k a n d W S-N o tific a tio n  

E-Print Network [OSTI]

Sta te a n d E v e n ts fo r W e b Se r v ic e s: A C o m p a r iso n o f F iv e W S-R e so u r c e F r a m e w o r k a n d W S-N o tific a tio n Im p le m e n ta tio n s M a rty H u m p h re y , G le n n W a sso n D e p a rtm e n t o f C o m p u te r S c ie n c e , U n iv e rsity o f V irg in ia , C

Humphrey, Marty

45

p-type Bi2Se3 for topological insulator and low temperature thermoelectric applications  

E-Print Network [OSTI]

end-members of the (Bi,Sb)2(Te,Se)3 family of thermoelectric materials. Decades of work-based thermoelectrics has been the difficulty in making the material p-type. Unlike Bi2Te3, which can1 p-type Bi2Se3 for topological insulator and low temperature thermoelectric applications Y.S. Hor1

Ong, N. P.

46

Metallurgy, thermal stability, and failure mode of the commercial Bi-Te-based thermoelectric modules.  

SciTech Connect (OSTI)

Bi-Te-based thermoelectric (TE) alloys are excellent candidates for power generation modules. We are interested in reliable TE modules for long-term use at or below 200 C. It is known that the metallurgical characteristics of TE materials and of interconnect components affect the performance of TE modules. Thus, we have conducted an extensive scientific investigation of several commercial TE modules to determine whether they meet our technical requirements. Our main focus is on the metallurgy and thermal stability of (Bi,Sb){sup 2}(Te,Se){sup 3} TE compounds and of other materials used in TE modules in the temperature range between 25 C and 200 C. Our study confirms the material suite used in the construction of TE modules. The module consists of three major components: AlN cover plates; electrical interconnects; and the TE legs, P-doped (Bi{sub 8}Sb{sub 32})(Te{sub 60}) and N-doped (Bi{sub 37}Sb{sub 3})(Te{sub 56}Se{sub 4}). The interconnect assembly contains Sn (Sb {approx} 1wt%) solder, sandwiched between Cu conductor with Ni diffusion barriers on the outside. Potential failure modes of the TE modules in this temperature range were discovered and analyzed. The results show that the metallurgical characteristics of the alloys used in the P and N legs are stable up to 200 C. However, whole TE modules are thermally unstable at temperatures above 160 C, lower than the nominal melting point of the solder suggested by the manufacture. Two failure modes were observed when they were heated above 160 C: solder melting and flowing out of the interconnect assembly; and solder reacting with the TE leg, causing dimensional swelling of the TE legs. The reaction of the solder with the TE leg occurs as the lack of a nickel diffusion barrier on the side of the TE leg where the displaced solder and/or the preexisting solder beads is directly contact the TE material. This study concludes that the present TE modules are not suitable for long-term use at temperatures above 160 C due to the reactivity between the Sn-solder and the (Bi,Sb){sup 2}(Te,Se){sup 3} TE alloys. In order to deploy a reliable TE power generator for use at or below 200 C, alternate interconnect materials must be used and/or a modified module fabrication technique must be developed.

Yang, Nancy Y. C.; Morales, Alfredo Martin

2009-02-01T23:59:59.000Z

47

Native defects in tetradymite Bi2(TexSe3-x) topological insulators  

SciTech Connect (OSTI)

Formation energies of native defects in Bi2(TexSe3-x), with comparison to ideal Bi2Te2S, are calculated in density-functional theory to assess transport properties. Bi2Se3 is found to be n type for both Bi- and Se-rich growth conditions, while Bi2Te3 changes from n to p type going from Te- to Bi-rich conditions, as observed. Bi2Te2Se and Bi2Te2S are generally n type, explaining observed heavily doped n-type behavior in most samples. A (0/-) transition level at 16 meV above valence-band maximum for Bi on Te antisites in Bi2Te2Se is related to the observed thermally active transport gap causing a p-to-n transition at low temperature. Bi2(TexSe3-x) with x>2 are predicted to have high bulk resistivity due to effective carrier compensation when approaching the n-to-p crossover. Predicted behaviors are confirmed from characterization of our grown single crystals.

Wang, Lin-Lin [Ames Laboratory; Huang, Mianliang [South Dakota School of Mines; Thimmaiah, Srinivasa [Ames Laboratory; Alam, Aftab [Ames Laboratory; Budko, Sergey L. [Ames Laboratory; Kaminski, Adam [Ames Laboratory; Lograsso, Thomas A. [Ames Laboratory; Canfield, Paul [Ames Laboratory; Johnson, Duane D. [Ames Laboratory

2013-03-08T23:59:59.000Z

48

Quantifying electron-phonon coupling in CdTe12xSex nanocrystals via coherent phonon manipulation  

E-Print Network [OSTI]

Quantifying electron-phonon coupling in CdTe12xSex nanocrystals via coherent phonon manipulation B to manipulate coherent phonon excitation and quantify the strength of electron-phonon coupling in CdTe1Ã?xSex nanocrystals (NCs). Raman active CdSe and CdTe longitudinal optical phonon (LO) modes are excited and probed

Xu, Xianfan

49

De de se  

E-Print Network [OSTI]

In this dissertation, I argue against a unitary treatment of individual de se ascription. Based on consideration of Yoruba logophors and English dream-report pronouns, I show that one mechanism is best analyzed as binding ...

Anand, Pranav

2006-01-01T23:59:59.000Z

50

Ann bay lodyans 8 / se Bryant Freeman ("Tonton Liben") ki pare ti liv sa a  

E-Print Network [OSTI]

dlo." Eklid Etyen, Teryewouj 1 2 TI GOUT TI GOUT, KONPE CHAT PEDI Yon jou diskisyon mete pye ant konpe Chen ak konpe Chat. Te gen yon moso vyann ate a. Konpe Chen di se li menm ki te we I anvan, men konpe Chat di se li menm ki te we I anvan... mak sonje. Konsa, Chat ale kay yon boko. Li di: "Papa, m vin lakay ou pou touye tout chen ki gen sou late. M ap peye ou mezi ou vie pou sa." Boko a reponn: "A monche, m ap ba ou sa sou de chez. Eske ou ka jwenn yon ti gout pipi chen?" Konpe Chat...

Freeman, Bryant C.

2000-01-01T23:59:59.000Z

51

Magnetoluminescence of CdTe/MnTe/CdMgTe heterostructures with ultrathin MnTe layers  

SciTech Connect (OSTI)

CdTe/MnTe/CdMgTe quantum-well structures with one or two monolayers of MnTe inserted at CdTe/CdMgTe interfaces were fabricated. The spectra of the excitonic luminescence from CdTe quantum wells and their variation with temperature indicate that introduction of ultrathin MnTe layers improves the interface quality. The effect of a magnetic field in the Faraday configuration on the spectral position of the exciton-emission peaks indicates that frustration of magnetic moments in one-monolayer MnTe insertions is weaker than in two-monolayer insertions. The effect of a magnetic field on the exciton localization can be explained in terms of the exciton wave-function shrinkage and obstruction of the photoexcited charge-carrier motion in the quantum well.

Agekyan, V. F., E-mail: vfag@rambler.ru [St. Petersburg State University, Fock Institute of Physics (Russian Federation); Holz, P. O. [Polish Academy of Sciences, Institute of Physics (Poland); Karczewski, G. [Linkoeping University (Sweden); Katz, V. N. [St. Petersburg State University, Fock Institute of Physics (Russian Federation); Moskalenko, E. S. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Serov, A. Yu.; Filosofov, N. G. [St. Petersburg State University, Fock Institute of Physics (Russian Federation)

2011-10-15T23:59:59.000Z

52

Weak topological insulators in PbTe/SnTe superlattices  

E-Print Network [OSTI]

It is desirable to realize topological phases in artificial structures by engineering electronic band structures. In this paper we investigate (PbTe)[subscript m](SnTe)[subscript 2n?m] superlattices along the [001] direction ...

Yang, Gang

53

CdTe/CdZnTe pixellated radiation detector.  

E-Print Network [OSTI]

??The work in this thesis is focused on the study of CdTe/CdZnTe pixellated detectors. During this research, three main aspects have been covered in the… (more)

Mohd Zain, Rasif

2015-01-01T23:59:59.000Z

54

THROUGH-THE-GLASS SPECTROSCOPIC ELLIPSOMETRY OF CdTe SOLAR CELLS  

E-Print Network [OSTI]

THROUGH-THE-GLASS SPECTROSCOPIC ELLIPSOMETRY OF CdTe SOLAR CELLS Jie Chen 1 , Jian Li 1 , Courtney of the optical structure of CdTe solar cells on transparent conducting oxide (TCO) coated glass superstrates. SE components from the coated glass before solar cell fabrication. A step-by-step fitting procedure identifies

Rockett, Angus

55

Te INCLUSIONS IN CdTe GROWN FROM A SLOWLY COOLED Te SOLUTION AND BY THE TRAVELLING SOLVENT METHOD  

E-Print Network [OSTI]

135 Te INCLUSIONS IN CdTe GROWN FROM A SLOWLY COOLED Te SOLUTION AND BY THE TRAVELLING SOLVENT. Abstract. 2014 CdTe crystals have been grown from a slowly cooled Te solution and with the travelling. Introduction. - CdTe crystals for nuclear radia- tion detectors are usually grown from a slowly cooled solution

Paris-Sud XI, Université de

56

New Rate Schedule CV-UUP1 UNITED STATES DEPARTMENT OF ENERGY  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the Contributions andDataNational Libraryornl.gov Ron WalliA Key TargetGID1

57

VICTORIA UNIVERSITY OF WELLINGTON Te Whare Wananga o te Upoko o te Ika a Maui  

E-Print Network [OSTI]

VICTORIA UNIVERSITY OF WELLINGTON Te Whare Wananga o te Upoko o te Ika a Maui School Descent Will Smart and Mengjie Zhang Technical Report CS-TR-04/11 August 2004 School of Mathematical and Computing Sciences Victoria University PO Box 600, Wellington New Zealand Tel: +64 4 463 5341 Fax: +64 4 463

Fernandez, Thomas

58

Luminescence Enhancement of CdTe Nanostructures in LaF3:Ce/CdTe...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Enhancement of CdTe Nanostructures in LaF3:CeCdTe Nanocomposites. Luminescence Enhancement of CdTe Nanostructures in LaF3:CeCdTe Nanocomposites. Abstract: Radiation detection...

59

Development of ZnTe:Cu Contacts for CdTe Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-08-320  

SciTech Connect (OSTI)

The main focus of the work at NREL was on the development of Cu-doped ZnTe contacts to CdTe solar cells in the substrate configuration. The work performed under the CRADA utilized the substrate device structure used at NREL previously. All fabrication was performed at NREL. We worked on the development of Cu-doped ZnTe as well as variety of other contacts such as Sb-doped ZnTe, CuxTe, and MoSe2. We were able to optimize the contacts to improve device parameters. The improvement was obtained primarily through increasing the open-circuit voltage, to values as high as 760 mV, leading to device efficiencies of 7%.

Dhere, R.

2012-04-01T23:59:59.000Z

60

TE Connectivity Finds Answers in Tomography  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

TE Connectivity Finds Answers in Tomography TE Connectivity Finds Answers in Tomography Print Thursday, 22 August 2013 10:50 TE Connectivity is a world leader in connectivity-the...

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

IR spectroscopy of lattice vibrations and comparative analysis of the ZnTe/CdTe quantum-dot superlattices on the GaAs substrate and with the ZnTe and CdTe buffer layers  

SciTech Connect (OSTI)

A comparative analysis of multiperiod ZnTe/CdTe superlattices with the CdTe quantum dots grown by molecular beam epitaxy on the GaAs substrate with the ZnTe and CdTe buffer layers is carried out. The elastic-stress-induced shifts of eigenfrequencies of the modes of the CdTe- and ZnTe-like vibrations of materials forming similar superlattices but grown on different buffer ZnTe and CdTe layers are compared. The conditions of formation of quantum dots in the ZnTe/CdTe superlattices on the ZnTe and CdTe buffer layers differ radically.

Kozyrev, S. P. [Russian Academy of Sciences, Lebedev Institute of Physics (Russian Federation)], E-mail: skozyrev@sci.lebedev.ru

2009-07-15T23:59:59.000Z

62

CdTe/CdSe/CdTe heterostructure nanorods and I-III-VI? nanocrystals: synthesis and characterization.  

E-Print Network [OSTI]

??Semiconductor nanocrystals are interesting candidates as new light-absorbing materials for photovoltaic (PV) devices. They can be dispersed in solvents and cheaply deposited at low-temperature on… (more)

Koo, Bonil

2010-01-01T23:59:59.000Z

63

Diffusion of Te vacancy and interstitials of Te, Cl, O, S, P and Sb in CdTe: A density functional theory study  

E-Print Network [OSTI]

Diffusion of Te vacancy and interstitials of Te, Cl, O, S, P and Sb in CdTe: A density functional profiles in CdTe of native, Te adatom and vacancy, and anionic non-native interstitial adatoms P, Sb, O, S B.V. All rights reserved. 1. Introduction Cadmium telluride (CdTe) based thin films have emerged

Khare, Sanjay V.

64

Determination of Mass Attenuation Coefficients for CuInSe2 and CuGaSe2 Semiconductors  

SciTech Connect (OSTI)

This work presents mass attenuation coefficients values of CuInSe2 and CuGaSe2 semiconductor thin films commonly used in photovoltaic devices. The mass attenuation coefficients were measured at different energies from 11.9 to 37.3 keV by using the secondary excitation method. Monochromatic photons were obtained using the Br, Sr, Mo, Cd, Te, Ba and Nd secondary targets. 59.5 keV gamma rays emitted from an annular Am-241 radioactive source were used to excite secondary targets. Characteristic X-rays emitted from secondary target were counted by a Si(Li) detector with a resolution of 0.16 keV at 5.9 keV. The measured values were compared with theoretical values calculated using WinXCOM program.

Celik, Ahmet; Cevik, Ugur; Baltas, Hasan; Bacaksiz, Emin [Department of Physics, Faculty of Arts and Sciences, Karadeniz Technical University, 61080 Trabzon (Turkey)

2007-04-23T23:59:59.000Z

65

HVAC Optimization at Te Papa  

E-Print Network [OSTI]

and humid climate means that the outside air is rarely very dry. (Incidentally, Te Papa’s position on the harbour means that the air temperatures it faces are several degrees warmer in winter and cooler in summer than at the local weather stations... concentration of 1000 ppm, Figure 8 shows the amount of excess outside air, as a ratio of actual to required, as a function of indoor CO2, for two ambient concentrations, 400 and 500 ppm. (Due to Te Papa’s location on the harbour, ambient CO2 levels vary...

Bishop, R.

2005-01-01T23:59:59.000Z

66

Elastic properties of sulphur and selenium doped ternary PbTe alloys by first principles  

SciTech Connect (OSTI)

Lead telluride (PbTe) is an established thermoelectric material which can be alloyed with sulphur and selenium to further enhance the thermoelectric properties. Here, a first principles study of ternary alloys PbS{sub x}Te{sub (1?x)} and PbSe{sub x}Te{sub (1?x)} (0?x?1) based on the Virtual Crystal Approximation (VCA) is presented for different ratios of the isoelectronic atoms in each series. Equilibrium lattice parameters and elastic constants have been calculated and compared with the reported data. Anisotropy parameter calculated from the stiffness constants showed a slight improvement in anisotropy of elastic properties of the alloys over undoped PbTe. Furthermore, the alloys satisfied the predicted stability criteria from the elastic constants, showing stable structures, which agreed with the previously reported experimental results.

Bali, Ashoka, E-mail: rcmallik@physics.iisc.ernet.in; Chetty, Raju, E-mail: rcmallik@physics.iisc.ernet.in; Mallik, Ramesh Chandra, E-mail: rcmallik@physics.iisc.ernet.in [Thermoelectric Materials and Devices Laboratory, Department of Physics, Indian Institute of Science, Bangalore-560012 (India)

2014-04-24T23:59:59.000Z

67

Synthesis of Germanium-Gallium-Tellurium (Ge-Ga-Te) ceramics by ball-milling and sintering Mathieu Hubert, Elena Petracovschi, Xiang-Hua Zhang and Laurent Calvez*  

E-Print Network [OSTI]

, the semiconductor behavior of CdTe is exploited for the production of solar panels [1, 2], the rapid and reversibleSe3 [21, 22] glasses show a controllable crystallization behavior, enabling the production of glass

Paris-Sud XI, Université de

68

X-ray standing wave study of CdTe/MnTe/CdTe(001) heterointerfaces J. C. Boulliard,a)  

E-Print Network [OSTI]

features of the first stages of growth of ultrathin pseudomorphic MnTe 001 strained layers buried in CdTe on CdTe 001 substrates. Experiments with 004 and 113 reflecting planes show evidence of the presenceTe layers grown in CdTe 001 by molecular beam epitaxy. The results will be compared to high resolution

Boyer, Edmond

69

Observation de super-rseaux CdTe-HgTe par microscopie lectronique en transmission  

E-Print Network [OSTI]

-conducteurs II-VI a été beaucoup plus tardive [2]. Dans cette dernière famille, le système CdTe- HgTe présente l'avantage d'un accord de maille quasi parfait entre les deux composés (a = 0,648 nm pour CdTe contre a = 0 JET MOL�CULAIRE. - Les super- réseaux CdTe-HgTe ont été épitaxiés sur un substrat CdTe d

Paris-Sud XI, Université de

70

Si, CdTe and CdZnTe radiation detectors for imaging applications.  

E-Print Network [OSTI]

??The structure and operation of CdTe, CdZnTe and Si pixel detectors based on crystalline semiconductors, bump bonding and CMOS technology and developed mainly at Oy… (more)

Schulman, Tom

2006-01-01T23:59:59.000Z

71

Recycling of CdTe photovoltaic waste  

DOE Patents [OSTI]

A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate and electrolyzing the leachate to separate Cd from Te, wherein the Te is deposits onto a cathode while the Cd remains in solution.

Goozner, Robert E. (Charlotte, NC); Long, Mark O. (Charlotte, NC); Drinkard, Jr., William F. (Charlotte, NC)

1999-01-01T23:59:59.000Z

72

Recycling ZnTe, CdTe, and Other Compound Semiconductors by Ambipolar Electrolysis  

E-Print Network [OSTI]

The electrochemical behavior of ZnTe and CdTe compound semiconductors dissolved in molten ZnCl[subscript 2] and equimolar CdCl[subscript 2]–KCl, respectively, was examined. In these melts dissolved Te is present as the ...

Osswald, Sebastian

73

A Search for Neutrinoless Double Beta Decay of Te-130  

E-Print Network [OSTI]

Decay of Te by Adam Douglas Bryant A dissertation submitted2010 by Adam Douglas Bryant Te Abstract A Search forDecay of Te by Adam Douglas Bryant Doctor of Philosophy in

Bryant, Adam Douglas

2010-01-01T23:59:59.000Z

74

Response of Cds/CdTe Devices to Te Exposure of Back Contact: Preprint  

SciTech Connect (OSTI)

Theoretical predictions of thin-film CdS/CdTe photovoltaic (PV) devices have suggested performance may be improved by reducing recombination due to Te-vacancy (VTe) or Te-interstitial (Tei) defects. Although formation of these intrinsic defects is likely influenced by CdTe deposition parameters, it also may be coupled to formation of beneficial cadmium vacancy (VCd) defects. If this is true, reducing potential effects of VTe or Tei may be difficult without also reducing the density of VCd. In contrast, post-deposition processes can sometimes afford a greater degree of defect control. Here we explore a post-deposition process that appears to influence the Te-related defects in polycrystalline CdTe. Specifically, we have exposed the CdTe surface to Te prior to ZnTe:Cu/Ti contact-interface formation with the goal of reducing VTe but without significantly reducing VCd. Initial results show that when this modified contact is used on a CdCl2-treated CdS/CdTe device, significantly poorer device performance results. This suggests two things: First, the amount of free-Te available during contact formation (either from chemical etching or CuTe or ZnTe deposition) may be a more important parameter to device performance than previously appreciated. Second, if processes have been used to reduce the effect of VTe (e.g., oxygen and chlorine additions to the CdTe), adding even a small amount of Te may produce detrimental defects.

Gessert, T. A.; Burst, J. M.; Ma, J.; Wei, S. H.; Kuciauskas, D.; Barnes, T. M.; Duenow, J. N.; Young, M. R.; Rance, W. L.; Li, J. V.; Dippo, P.

2012-06-01T23:59:59.000Z

75

CdSxTe1-x Alloying in CdS/CdTe Solar Cells  

SciTech Connect (OSTI)

A CdSxTe1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdSxTe1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdSxTe1-x region. Further understanding, however, is essential to predict the role of this CdSxTe1-x layer in the operation of CdS/CdTe devices. In this study, CdSxTe1-x alloy films were deposited by RF magnetron sputtering and co-evaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and co-evaporated CdSxTe1-x films of lower S content (x<0.3) have a cubic zincblende (ZB) structure akin to CdTe, while those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl2 heat treatment at ~400 degrees C for 5 min. Films sputtered in a 1% O2/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl2 heat treatment (HT). Films sputtered in O2 partial pressure have a much wider bandgap (BG) than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films.

Duenow, J. N.; Dhere, R. G.; Moutinho, H. R.; To, B.; Pankow, J. W.; Kuciauskas, D.; Gessert, T. A.

2011-05-01T23:59:59.000Z

76

CdSxTe1-x Alloying in CdS/CdTe Solar Cells  

SciTech Connect (OSTI)

A CdS{sub x}Te{sub 1-x} layer forms by interdiffusion of CdS and CdTe during the fabrication of thin film CdTe photovoltaic (PV) devices. The CdS{sub x}Te{sub 1-x} layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work has indicated that the electrical junction is located in this interdiffused CdS{sub x}Te{sub 1-x} region. Further understanding, however, is essential to predict the role of this CdS{sub x}Te{sub 1-x} layer in the operation of CdS/CdTe devices. In this study, CdS{sub x}Te{sub 1-x} alloy films were deposited by radio-frequency magnetron sputtering and coevaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and coevaporated CdS{sub x}Te{sub 1-x} films of lower S content (x < 0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl{sub 2} heat treatment at {approx}400 C for 5 min. Films sputtered in a 1% O{sub 2}/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl{sub 2} heat treatment. Films sputtered in O{sub 2} partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously for sputtered oxygenated CdS (CdS:O) films.

Duenow, J. N.; Dhere, R. G.; Moutinho, H. R.; To, B.; Pankow, J. W.; Kuciauskas, D.; Gessert, T. A.

2011-01-01T23:59:59.000Z

77

Energy loss rate of a charged particle in HgTe/(HgTe, CdTe) quantum wells  

SciTech Connect (OSTI)

The energy loss rate (ELR) of a charged particle in a HgTe/(HgTe, CdTe) quantum well is investigated. We consider scattering of a charged particle by the bulk insulating states in this type of topological insulator. It is found that the ELR characteristics due to the intraband excitation have a linear energy dependence while those due to interband excitation depend on the energy exponentially. An interesting quantitative result is that for a large range of the incident energy, the mean inelastic scattering rate is around a few terahertz.

Chen, Qinjun; Sin Ang, Yee [School of Physics, University of Wollongong, New South Wales 2522 (Australia)] [School of Physics, University of Wollongong, New South Wales 2522 (Australia); Wang, Xiaolin [Institute for Superconducting and Electronic Materials, University of Wollongong, New South Wales 2522 (Australia)] [Institute for Superconducting and Electronic Materials, University of Wollongong, New South Wales 2522 (Australia); Lewis, R. A.; Zhang, Chao [School of Physics, University of Wollongong, New South Wales 2522 (Australia) [School of Physics, University of Wollongong, New South Wales 2522 (Australia); Institute for Superconducting and Electronic Materials, University of Wollongong, New South Wales 2522 (Australia)

2013-11-04T23:59:59.000Z

78

In-situ spectroscopic ellipsometry for real time composition control of Hg{sub 1{minus}x}Cd{sub x}Te grown by molecular beam epitaxy  

SciTech Connect (OSTI)

Spectral ellipsometry (SE) was applied to in situ composition control of Hg{sub 1{minus}x}Cd{sub x}Te grown by molecular beam epitaxy (MBE), and the impact of surface topography of the Hg{sub 1{minus}x}Cd{sub x}Te layers on the accuracy of SE was investigated. Of particular importance is the presence of surface defects, such as voids in MBE-Hg{sub 1{minus}x}Cd{sub x}Te layers. While dislocations do not have any significant impact on the dielectric functions, the experimental data in this work show that MBE-Hg{sub 1{minus}x}Cd{sub x}Te samples having the same composition, but different void densities, have different effective dielectric functions.

Dat, R.; Aqariden, F.; Chandra, D.; Shih, H.D. [Raytheon TI Systems, Sensors and Infrared Lab., Dallas, TX (United States); Duncan, W.M. [Texas Instruments Inc., Dallas, TX (United States). Components and Materials Research Center

1998-12-31T23:59:59.000Z

79

Infrared spectroscopy of lattice vibrations in ZnTe/CdTe superlattices with quantum dots on the GaAs substrate with the ZnTe buffer layer  

SciTech Connect (OSTI)

The results of the analysis of the infrared lattice reflectance spectra of multiperiod ZnTe/CdTe superlattices with CdTe quantum dots are reported. The samples are grown by molecular beam epitaxy on the GaAs substrate with the ZnTe buffer layer. Due to the large number of periods of the superlattices, it is possible to observe CdTe-like vibration modes in the quantum dots, i.e., the dislocation-free stressed islands formed during the growth due to relaxation of elastic stresses between the ZnTe and CdTe layers are markedly different in their lattice parameters. From the frequency shifts of the CdTe- and ZnTe-like vibration modes with respect to the corresponding modes in the unstressed materials, it is possible to estimate the level of elastic stresses.

Kozyrev, S. P. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)], E-mail: skozyrev@sci.lebedev.ru

2009-03-15T23:59:59.000Z

80

Formation and optical properties of CdTe/ZnTe nanostructures with different CdTe thicknesses grown on Si (100) substrates  

SciTech Connect (OSTI)

Atomic force microscopy (AFM) and photoluminescence (PL) measurements were carried out to investigate the formation and the optical properties of CdTe/ZnTe nanostructures with various CdTe thicknesses grown on Si (100) substrates by using molecular beam epitaxy and atomic layer epitaxy. AFM images showed that uniform CdTe/ZnTe quantum dots with a CdTe layer thickness of 2.5 ML (monolayer) were formed on Si (100) substrates. The excitonic peaks corresponding to transitions from the ground electronic subband to the ground heavy-hole band in the CdTe/ZnTe nanostructures shifted to a lower energy with increasing thickness of the CdTe layer. The activation energies of the carriers confined in the CdTe/ZnTe nanostructures grown on Si (100) substrates were obtained from the temperature-dependent PL spectra. The present observations can help improve understanding of the formation and the optical properties in CdTe/ZnTe nanostructures with different CdTe thicknesses grown on Si (100) substrates.

Lee, H. S.; Park, H. L.; Lee, I.; Kim, T. W. [Department of Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of)

2007-11-15T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Recycling of CdTe photovoltaic waste  

DOE Patents [OSTI]

A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base.

Goozner, Robert E. (Charlotte, NC); Long, Mark O. (Charlotte, NC); Drinkard, Jr., William F. (Charlotte, NC)

1999-04-27T23:59:59.000Z

82

Recycling of CdTe photovoltaic waste  

DOE Patents [OSTI]

A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base. 3 figs.

Goozner, R.E.; Long, M.O.; Drinkard, W.F. Jr.

1999-04-27T23:59:59.000Z

83

Growth and optical properties of CdTe quantum dots in ZnTe nanowires  

SciTech Connect (OSTI)

We report on the formation of optically active CdTe quantum dots in ZnTe nanowires. The CdTe/ZnTe nanostructures have been grown by a gold nanocatalyst assisted molecular beam epitaxy in a vapor-liquid solid growth process. The presence of CdTe insertions in ZnTe nanowire results in the appearance of a strong photoluminescence band in the 2.0 eV-2.25 eV energy range. Spatially resolved photoluminescence measurements reveal that this broad emission consists of several sharp lines with the spectral width of about 2 meV. The large degree of linear polarization of these individual emission lines confirms their nanowire origin, whereas the zero-dimensional confinement is proved by photon correlation spectroscopy.

Wojnar, Piotr; Janik, Elzbieta; Baczewski, Lech T.; Kret, Slawomir; Karczewski, G.; Wojtowicz, Tomasz [Institute of Physics, Polish Academy of Sciences, Al Lotnikow 32/46, 02-668 Warsaw (Poland); Goryca, Mateusz; Kazimierczuk, Tomasz; Kossacki, Piotr [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland)

2011-09-12T23:59:59.000Z

84

IMPROVEMENT OF CdMnTe DETECTOR PERFORMANCE BY MnTe PURIFICATION  

SciTech Connect (OSTI)

Residual impurities in manganese (Mn) are a big obstacle to obtaining high-performance CdMnTe (CMT) X-ray and gamma-ray detectors. Generally, the zone-refining method is an effective way to improve the material's purity. In this work, we purified the MnTe compounds combining the zone-refining method with molten Te, which has a very high solubility for most impurities. We confirmed the improved purity of the material by glow-discharge mass spectrometry (GDMS). We also found that CMT crystals from a multiply-refined MnTe source, grown by the vertical Bridgman method, yielded better performing detectors.

Kim, K.H.; Bolotnikov, A.E.; Camarda, G.S.; Tappero, R.; Hossain, A.; Cui, Y.; Yang, G.; Gul, R.; and James, R.B.

2011-04-25T23:59:59.000Z

85

Phonon blocking by two dimensional electron gas in polar CdTe/PbTe heterojunctions  

SciTech Connect (OSTI)

Narrow-gap lead telluride crystal is an important thermoelectric and mid-infrared material in which phonon functionality is a critical issue to be explored. In this Letter, efficient phonon blockage by forming a polar CdTe/PbTe heterojunction is explicitly observed by Raman scattering. The unique phonon screening effect can be interpreted by recent discovery of high-density two dimensional electrons at the polar CdTe/PbTe(111) interface which paves a way for design and fabrication of thermoelectric devices.

Zhang, Bingpo; Cai, Chunfeng; Zhu, He; Wu, Feifei; Ye, Zhenyu; Chen, Yongyue; Li, Ruifeng; Kong, Weiguang; Wu, Huizhen, E-mail: hzwu@zju.edu.cn [Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027 (China)

2014-04-21T23:59:59.000Z

86

Facultad de Ciencias Departamento de Fsica Te  

E-Print Network [OSTI]

Facultad de Ciencias Departamento de Fâ??�sica Te â?? orica Jet production in charged current deep Ciencias Fâ??�sicas'' by M â?? onica Luisa V â?? azquez Acosta Director : Juan Terr â?? on Cuadrado 16/12/2002 #12; #12; Facultad de Ciencias Departamento de Fâ??�sica Te â?? orica Producci â?? on de chorros hadr â?? onicos en

87

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

88

CdTe AND CdTe : Hg ALLOYS CRYSTAL GROWTH USING STOICHIOMETRIC AND OFF-STOICHIOMETRIC  

E-Print Network [OSTI]

123 CdTe AND CdTe : Hg ALLOYS CRYSTAL GROWTH USING STOICHIOMETRIC AND OFF-STOICHIOMETRIC ZONE.-Briand, 92190 Meudon/Bellevue, France Résumé. 2014 En vue de la croissance de cristaux de CdTe de haute cristaux semi-isolants Cd0, 9Hg0, 1Te. Abstract. 2014 Some aspects of the thermodynamic state of CdTe

Paris-Sud XI, Université de

89

Semitransparent ultrathin CdTe solar cells Semitransparent ultrathin CdTe solar cells and durabilityand durability  

E-Print Network [OSTI]

Semitransparent ultrathin CdTe solar cells Semitransparent ultrathin CdTe solar cells PV coatings based on CdTe. ...for transparent window PV:...for transparent window PV: , p g · The X26 for ultrathin CdTe · X26 PV window coatings (250 500 nm of CdTe) are attractive very low cost and· X26 PV window

Rollins, Andrew M.

90

HgTe-low-field Strained HgTe: a textbook 3D topological insulator  

E-Print Network [OSTI]

HgTe-low-field Strained HgTe: a textbook 3D topological insulator Cl´ement Bouvier, Tristan Meunier martyrs 38054 Grenoble Cedex 9, France (Dated: December 9, 2011) Topological insulators can be seen-conductors and topological- insulators, other contributions make transport data more difficult to unravel. This letter

Paris-Sud XI, Université de

91

CdTe, CdTe/CdS Core/Shell, and CdTe/CdS/ZnS Core/Shell/Shell Quantum Dots Study.  

E-Print Network [OSTI]

?? CdTe, CdTe/CdS core/shell, and CdTe/CdS/ZnS core/shell/shell quantum dots (QDs) are potential candidates for bio-imaging and solar cell applications because of some special physical properties… (more)

Yan, Yueran

2012-01-01T23:59:59.000Z

92

Ann bay lodyans 7 / se Bryant Freeman ("Tonton Liben") ki pare ti liv sa a  

E-Print Network [OSTI]

("Tonton Liben") ki pare ti liv sa a. AYITI SE PEP AYISYEN PM 7854 .H39 A56 Enstiti Etid Ayisyen - Inivesite Kannzas Bon Nouvel Fondasyon Alfa Lwes 1997 MALIS AP VANN, WA AP PRAN Yon jou yon neg t ap fe yon ti vizit lakay Malis. Pandan li t ap... I ak nan lespri I, ti lanp sa a ap pemet li we sot isit rive nan Ginen, menm anndan yon kay ki femen ak mi." Neg la mande: "Eske ou te seye sa deja?" Malis reponn: "O non, monche! Eske ou kwe m ta ka rete konsa jis pou m ka fe jouda, fouye lavi...

Freeman, Bryant C.

2000-01-01T23:59:59.000Z

93

High Performance of InSe and InSeGraphene Heterostructure Based Wide Spectral Photodetectors  

E-Print Network [OSTI]

We investigated both the few-layered InSe/metal photodetectors and InSe/graphene heterostructure photodetectors. Both types of the photodetectors show broad spectral range at 400-1000 nm. The few-layered InSe/metal photodetectors have higher photoresponsivity than that of the InSe/graphene heterostructure photodetectors. However, the InSe/graphene heterostructure photodetectors possesses a fast response time down to 100 {\\mu}s, which is about 40 times faster than that of the InSe/metal devices. The design of 2D crystal/graphene heterostructure could be important for high performace optoelectronic devices.

Luo, Wengang; Hu, Pingan; Cai, Kaiming; Feng, Qi; Yan, Faguang; Yan, Tengfei; Zhang, Xinhui; Wang, Kaiyou

2015-01-01T23:59:59.000Z

94

THE DEFECT STRUCTURE OF CdTe (*) F. A. KRGER  

E-Print Network [OSTI]

THE DEFECT STRUCTURE OF CdTe (*) F. A. KR�GER David Packard Professor of Electrical Engineering haute résistivité. Abstract. 2014 Evidence concerning the defect structure of CdTe is reviewed

Paris-Sud XI, Université de

95

Preliminary study of CdTe and CdTe:Cu thin films nanostructures deposited by using DC magnetron sputtering  

SciTech Connect (OSTI)

Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 °C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 °C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV.

Marwoto, Putut; Made, D. P. Ngurah; Sugianto [Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia)] [Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Wibowo, Edy; Astuti, Santi Yuli; Aryani, Nila Prasetya [Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia)] [Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Othaman, Zulkafli [Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)] [Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)

2013-09-03T23:59:59.000Z

96

Bioavailability of Particle-Associated Se to the Bivalve Potamocorbula  

E-Print Network [OSTI]

of Se(0) by generatingradioisotopic75Se(0)throughbacterialdissimilatory reduction of 75SeO3 2- by pure by reducing 75SeO3 2- with ascorbic acid (AA). Speciation determinations showed that AA and SES were >90% Se(0. After 113 d of incubation, 36% of SES Se(0) was oxidized to SeO3 2-. Assimilation of total particulate

97

PRESENT LIMITATIONS OF CdTe DETECTORS IN NUCLEAR MEDICINE  

E-Print Network [OSTI]

365 PRESENT LIMITATIONS OF CdTe DETECTORS IN NUCLEAR MEDICINE R. ALLEMAND, P. BOUTEILLER, M. LAVAL quality criteria, it is necessary to compare Cd-Te detectors results (or estimated characteristics) with other methods (i. e. 8cintillation cameras) in order to know the effective interest of Cd-Te in nuclear

Boyer, Edmond

98

Transverse Feedback in a 100 TeV Storage Ring  

E-Print Network [OSTI]

Proceedings Transverse Feedback in a 100 TeV Storage Ring G.DE93 001571 TRANSVERSE FEEDBACK IN A 100 TeV STORAGE RING*IS UNLIMITED r-t_9. TRANSVERSE FEEDBACK IN A 100 TeV STORAGE

Lambertson, G.

2011-01-01T23:59:59.000Z

99

Hybrid functional calculations of a Te antisite in bulk CdTe.  

E-Print Network [OSTI]

?? The detection of gamma-rays is an important issue in a cast array ofindustries. CdTe is a semiconductor used for gamma-ray detectors whichcan operate at… (more)

Árdal, Kristinn Björgvin

2013-01-01T23:59:59.000Z

100

Influence of CdTe thickness on structural and electrical properties of CdTe/CdS solar cells  

E-Print Network [OSTI]

Influence of CdTe thickness on structural and electrical properties of CdTe/CdS solar cells A a b s t r a c ta r t i c l e i n f o Available online xxxx Keywords: Solar cells CdCl2 CdTe Thin absorbers Due to its high scalability and low production cost, CdTe solar cells have shown a very strong

Romeo, Alessandro

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

The PeTroleum InsTITuTe Annual report 2009 The PeTroleum InsTITuTe  

E-Print Network [OSTI]

The PeTroleum InsTITuTe Annual report 2009 The PeTroleum InsTITuTe Annual report - 2009 online version #12;The PeTroleum InsTITuTe Annual report 2009 #12;The PeTroleum InsTITuTe Annual report 2009 overvIew Annual Report 2009 THE PETROLEUM INSTITUTE Office of the President 4 OFFICE OF THE PRESIDENT DR

102

Mechanism of terahertz photoconductivity in semimetallic HgTe/CdHgTe quantum wells  

SciTech Connect (OSTI)

Terahertz photoconductivity in magnetic fields in semimetallic HgTe/CdHgTe quantum wells has been studied. The main contribution to photoconductivity comes from a signal that appears as a result of electron-gas heating. It is shown that, with the cyclotron resonance conditions satisfied, the photoconductivity signal is composed of cyclotron-resonance and bolometric components. However, in this case too, the bolometric contribution predominates.

Vasilyev, Yu. B., E-mail: yu.vasilyev@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Mikhailov, N. N. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Gouider, F. [Institut fuer Angewandte Physik (Germany); Vasilyeva, G. Yu. [St. Petersburg State Polytechnic University (Russian Federation); Nachtwei, G. [Institut fuer Angewandte Physik (Germany)

2012-05-15T23:59:59.000Z

103

THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te-CdTe HETEROJUNCTIONS (1)  

E-Print Network [OSTI]

195 THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te This paper is a short status report on the continuing development of Cu22014xTe-CdTe thin film solar cells Company has had a conti- nuous effort on thin film solar cells for the past four and a half years

Paris-Sud XI, Université de

104

Electronic structure and phase stability of MgTe, ZnTe, CdTe, and their alloys in the B3, B4, and B8 structures  

E-Print Network [OSTI]

Aron Walsh and Su-Huai Wei National Renewable Energy Laboratory, Golden, Colorado 80401, USA ReceivedTe. However, the Mg,Zn Te alloy undergoes a B3 to B4 transition above 88% Mg concentration and a B4 to B8 transition above 95% Mg concentration. For Mg,Cd Te, a B3 to B4 transition is predicted above 80% Mg content

Gong, Xingao

105

Charge separation and transfer in hybrid type II tunneling structures of CdTe and CdSe nanocrystals.  

E-Print Network [OSTI]

??Halbleiter-Nanokristalle sind eine besondere Materialklasse in den Nanowissenschaften. Sie sind kleinste Halbleiter-Kristalle, die an ihrer Oberfläche mittels organischer Chemie passiviert wurden. Damit können Sie auf… (more)

Groß, Dieter

2013-01-01T23:59:59.000Z

106

www.ave.kth.se Rail Vehicles  

E-Print Network [OSTI]

www.ave.kth.se Rail Vehicles Part of the Masters program in Vehicle Engineering Master's Thesis: Validation of wheel wear calculation code Background Rail vehicle operators have a genuine concern about wheel and rail wear prediction methodologies, due to the influence of worn profiles in the cost of both

Haviland, David

107

Luminescence Enhancement of CdTe Nanostructures in LaF3:Ce/CdTe Nanocomposites  

SciTech Connect (OSTI)

Radiation detection demands new scintillators with high quantum efficiency, high energy resolution and short luminescence lifetimes. Nanocomposites consisting of quantum dots and Ce3+ doped nanophosphors may be able to meet these requirements. Here we report the luminescence of LaF3:Ce/CdTe nanocomposites which were synthesized by a wet chemistry method. In LaF3:Ce/CdTe nanocomposites the CdTe quantum dots are converted into nanowires, while in LaF3/CdTe nanocomposites no such conversion is observed. The CdTe luminescence in LaF3:Ce/CdTe nanocomposites is enhanced about 5 times, while in LaF3/CdTe nanocomposites no enhancement was observed. Energy transfer, light-re-absorption and surface passivation are likely the reasons for the luminescence enhancement.

Yao, Mingzhen; Zhang, Xing; Ma, Lun; Chen, Wei; Joly, Alan G.; Huang, Jinsong; Wang, Qingwu

2010-11-15T23:59:59.000Z

108

Relations between structural parameters and physical properties in CdTe and Cd0.96Zn0.04Te alloys  

E-Print Network [OSTI]

481 Relations between structural parameters and physical properties in CdTe and Cd0.96Zn0.04Te cristaux de CdTe et de Cd0,96Zn0,04Te, de densité de dislocations variant entre 5 x 104 et 6 x 105 cm-2. La and photoluminescence experiments were performed on several CdTe and Cd0.96Zn0.04Te crystals with dislocation density

Paris-Sud XI, Université de

109

Anisotropy in CdSe quantum rods  

SciTech Connect (OSTI)

The size-dependent optical and electronic properties of semiconductor nanocrystals have drawn much attention in the past decade, and have been very well understood for spherical ones. The advent of the synthetic methods to make rod-like CdSe nanocrystals with wurtzite structure has offered us a new opportunity to study their properties as functions of their shape. This dissertation includes three main parts: synthesis of CdSe nanorods with tightly controlled widths and lengths, their optical and dielectric properties, and their large-scale assembly, all of which are either directly or indirectly caused by the uniaxial crystallographic structure of wurtzite CdSe. The hexagonal wurtzite structure is believed to be the primary reason for the growth of CdSe nanorods. It represents itself in the kinetic stabilization of the rod-like particles over the spherical ones in the presence of phosphonic acids. By varying the composition of the surfactant mixture used for synthesis we have achieved tight control of the widths and lengths of the nanorods. The synthesis of monodisperse CdSe nanorods enables us to systematically study their size-dependent properties. For example, room temperature single particle fluorescence spectroscopy has shown that nanorods emit linearly polarized photoluminescence. Theoretical calculations have shown that it is due to the crossing between the two highest occupied electronic levels with increasing aspect ratio. We also measured the permanent electric dipole moment of the nanorods with transient electric birefringence technique. Experimental results on nanorods with different sizes show that the dipole moment is linear to the particle volume, indicating that it originates from the non-centrosymmetric hexagonal lattice. The elongation of the nanocrystals also results in the anisotropic inter-particle interaction. One of the consequences is the formation of liquid crystalline phases when the nanorods are dispersed in solvent to a high enough concentration. The preparation of the stable liquid crystalline solution of CdSe nanorods is described, as well as the large-scale alignment of the nanorods by taking advantage of the long-range orientational correlation in the liquid crystals. In addition, we investigated the phase diagram of the nanorod solution, as a step toward understanding the possible role of the long-range attractive interaction between the nanorods in the formation of lyotropic liquid crystals.

Li, Liang-shi

2003-09-01T23:59:59.000Z

110

New chalcogenide glasses in the CdTe-AgI-As{sub 2}Te{sub 3} system  

SciTech Connect (OSTI)

Highlights: Black-Right-Pointing-Pointer Determination of the glass-forming region in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system. Black-Right-Pointing-Pointer Characterization of macroscopic properties of the new CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Characterization of the total conductivity of CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Comparison between the selenide and telluride equivalent systems. -- Abstract: Chalcogenide glasses in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system were synthesized and the glass-forming range was determined. The maximum content of CdTe in this glass system was found to be equal to 15 mol.%. The macroscopic characterizations of samples have consisted in Differential Scanning Calorimetry, density, and X-ray diffraction measurements. The cadmium telluride addition does not generate any significant change in the glass transition temperature but the resistance of binary AgI-As{sub 2}Te{sub 3} glasses towards crystallisation is estimated to be decreasing on the base of {Delta}T = T{sub x} - T{sub g} parameter. The total electrical conductivity {sigma} was measured by complex impedance spectroscopy. First, the CdTe additions in the (AgI){sub 0.5}(As{sub 2}Te{sub 3}){sub 0.5} host glass, (CdTe){sub x}(AgI){sub 0.5-x/2}(As{sub 2}Te{sub 3}){sub 0.5-x/2} lead to a conductivity decrease at x {<=} 0.05. Then, the behaviour is reversed at 0.05 {<=} x {<=} 0.15. The obtained results are discussed by comparison with the equivalent selenide system.

Kassem, M. [Univ. Picardie Jules Verne, F-80000 Amiens (France)] [Univ. Picardie Jules Verne, F-80000 Amiens (France); Le Coq, D., E-mail: david.lecoq@univ-littoral.fr [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France); Boidin, R.; Bychkov, E. [Univ. Lille Nord de France, F-59000 Lille (France) [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France)

2012-02-15T23:59:59.000Z

111

A Calorimetric Search on Double Beta Decay of 130Te  

E-Print Network [OSTI]

We report on the final results of a series of experiments on double decay of 130Te carried out with an array of twenty cryogenic detectors. The set-up is made with crystals of TeO2 with a total mass of 6.8 kg, the largest operating one for a cryogenic experiment. Four crystals are made with isotopically enriched materials: two in 128Te and two others in 130Te. The remaining ones are made with natural tellurium, which contains 31.7 % and 33.8 % 128Te and 130Te, respectively. The array was run under a heavy shield in the Gran Sasso Underground Laboratory at a depth of about 3500 m.w.e. By recording the pulses of each detector in anticoincidence with the others a lower limit of 2.1E23 years has been obtained at the 90 % C.L. on the lifetime for neutrinoless double beta decay of 130Te. In terms of effective neutrino mass this is the most restrictive limit in direct experiments, after those obtained with Ge diodes. Limits on other lepton violating decays of 130Te and on the neutrinoless double beta decay of 128Te to the ground state of 128Xe are also reported and discussed. An indication is presented for the two neutrino double beta decay of 130Te. Some consequences of the present results in the interpretation of geochemical experiments are discussed.

C. Arnaboldi; C. Brofferio; C. Bucci; S. Capelli; O. Cremonesi; E. Fiorini; A. Giuliani; A. Nucciotti; M. Pavan; M. Pedretti; G. Pessina; S. Pirro; C. Pobes; E. Previtali; M. Sisti; M. Vanzini

2003-02-25T23:59:59.000Z

112

I2SE | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio:GreerHiCalifornia: Energythe SecondInformation 3 -2 -2 - IdahoI2SE

113

High Performance Zintl Phase TE Materials with Embedded Particles...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

TE Materials with Embedded Particles Presents results from embedding nanoparticles in magnesium silicide alloy matrix reducing thermal conductivity by phonon scattering and...

114

A Search for Neutrinoless Double Beta Decay of Te-130  

E-Print Network [OSTI]

far unobserved, neutrinoless double beta decay is a possibleright for the neutrinoless double beta decay of 130 Te. Thisprocess, with neutrinoless double beta decay being the most

Bryant, Adam Douglas

2010-01-01T23:59:59.000Z

115

A Search for Neutrinoless Double Beta Decay of Te-130.  

E-Print Network [OSTI]

??This dissertation describes an experimental search for neutrinoless double beta (0???) decay of 130Te. An observation of 0??? decay would establish that neutrinos are Majorana… (more)

Bryant, Adam Douglas

2010-01-01T23:59:59.000Z

116

Thermoelectric properties of M{sub 2}Mo{sub 6}Se{sub 6} (M =Tl,In)  

SciTech Connect (OSTI)

The authors have measured the thermal conductivity of Tl{sub 2}Mo{sub 6}Se{sub 6}, a quasi-one dimensional conductor which belongs to the family of M{sub 2}Mo{sub 6}X{sub 6} linear chain compounds. Using these results and the measurements of the Seebeck coefficient and the electrical conductivity the authors estimate the dimensionless figure of merit to be of the order of 0.08. This result suggest that this compound and other related compounds are good potential TE.

Verebelyi, D.T.; Payne, J.E.; Tessema, G.X.; Mengistu, E.

1997-07-01T23:59:59.000Z

117

Diamond Based TE Materials | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeat Pump Models |Conduct, Parent CompanyaUSAMPRelated Path DependenceDiamond Based TE

118

Te Mihi Power Station | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty LtdSteen,Ltd Jump to:Taos County, New Mexico:Taylor County isTaylors,TazewellTe

119

Strain relaxation of CdTe films growing on lattice-mismatched substrates  

E-Print Network [OSTI]

gap approaches the value of bulk CdTe crystals. This makesbulk crystals with crystalline CdTe ?lms for the purpose ofthe top layer of thick CdTe ?lms grown on Si(001) substrate

Ma, Zhixun; Yu, Kin Man; Walukiewicz, Wladek; Yu, Peter Y.; Mao, Samuel S.

2009-01-01T23:59:59.000Z

120

E-Print Network 3.0 - amorphous ge-sb-te films Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

times in GeSbTe films irradiated... commercial phase-change optical recording systems, such as those based on GeSbTe Ref. 3 or AglnSbTe,4 use... the crystalline and...

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

X-ray luminescence of CdTe quantum dots in LaF{sub 3}:Ce/CdTe nanocomposites  

SciTech Connect (OSTI)

CdTe quantum dots have intense photoluminescence but exhibit almost no x-ray luminescence. However, intense x-ray luminescence from CdTe quantum dots is observed in LaF{sub 3}:Ce/CdTe nanocomposites. This enhancement in the x-ray luminescence of CdTe quantum dots is attributed to the energy transfer from LaF{sub 3}:Ce to CdTe quantum dots in the nanocomposites. The combination of LaF{sub 3}:Ce nanoparticles and CdTe quantum dots makes LaF{sub 3}:Ce/CdTe nanocomposites promising scintillators for radiation detection.

Hossu, Marius; Liu Zhongxin; Yao Mingzhen; Ma Lun; Chen Wei

2012-01-02T23:59:59.000Z

122

CdS/CdTe Solar Cells Containing Directly Deposited CdSxTe1-x Alloy Layers: Preprint  

SciTech Connect (OSTI)

A CdSxTe1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdSxTe1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdSxTe1-x region. Further understanding, however, is essential to predict the role of this CdSxTe1-x layer in the operation of CdS/CdTe devices. In this study, CdSxTe1-x alloy films were deposited by radio-frequency (RF) magnetron sputtering and co-evaporation from CdTe and CdS sources. Both RF-magnetron-sputtered and co-evaporated CdSxTe1-x films of lower S content (x<0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl2 heat treatment (HT) at ~400 degrees C for 5 min. Films sputtered in a 1% O2/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl2 HT. Films sputtered in O2 partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films. Initial PV device results show that the introduction of a directly-deposited CdSxTe1-x alloy layer into the device structure produces devices of comparable performance to those without the alloy layer when a CdCl2 HT is performed. Further investigation is required to determine whether the CdCl2 heat treatment step can be altered or eliminated through direct deposition of the alloy layer.

Duenow, J. N.; Dhere, R. G.; Moutinho, H. R.; To, B.; Pankow, J. W.; Kuciauskas, D.; Gessert, T. A.

2011-07-01T23:59:59.000Z

123

CdS/CdTe Solar Cells Containing Directly-Deposited CdSxTe1-x Alloy Layers  

SciTech Connect (OSTI)

A CdS{sub x}Te{sub 1-x} layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdS{sub x}Te{sub 1-x} layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdS{sub x}Te{sub 1-x} region. Further understanding, however, is essential to predict the role of this CdS{sub x}Te{sub 1-x} layer in the operation of CdS/CdTe devices. In this study, CdS{sub x}Te{sub 1-x} alloy films were deposited by radio-frequency (RF) magnetron sputtering and co-evaporation from CdTe and CdS sources. Both RF-magnetron-sputtered and co-evaporated CdS{sub x}Te{sub 1-x} films of lower S content (x<;0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl{sub 2} heat treatment (HT) at {approx}400 C for 5 min. Films sputtered in a 1% O{sub 2}/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl{sub 2} HT. Films sputtered in O{sub 2} partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films. Initial PV device results show that the introduction of a directly-deposited CdS{sub x}Te{sub 1-x} alloy layer into the device structure produces devices of comparable performance to those without the alloy layer when a CdCl{sub 2} HT is performed. Further investigation is required to determine whether the CdCl{sub 2} heat treatment step can be altered or eliminated through direct deposition of the alloy layer.

Duenow, J. N.; Dhere, R. G.; Moutinho, H. R.; To, B.; Pankow, J. W.; Kuciauskas, D.; Gessert, T. A.

2011-01-01T23:59:59.000Z

124

(GeTe){sub n}SbInTe{sub 3} (n?3)—Element distribution and thermal behavior  

SciTech Connect (OSTI)

Antimony in germanium antimony tellurides (GeTe){sub n}(Sb{sub 2}Te{sub 3}) can be substituted by indium. Homogeneous bulk samples of GeSbInTe{sub 4} (R3-bar m, Z=3, a=4.21324(5) Å, c=41.0348(10) Å) and Ge{sub 2}SbInTe{sub 5} (P3-bar m1, Z=1, a=4.20204(6) Å, c=17.2076(4) Å) were obtained; their structures were refined with the Rietveld method. Single-crystal X-ray diffraction using synchrotron radiation at the K edges of Sb and Te (exploiting anomalous dispersion) yields precise information on the element distribution in the trigonal layered structure of Ge{sub 3}SbInTe{sub 6} (R3-bar m, Z=3, a=4.19789(4) Å, c=62.1620(11) Å). The structure is characterized by van der Waals gaps between distorted rocksalt-type slabs of alternating cation and anion layers. The cation concentration is commensurately modulated with Sb preferring the positions near the gaps. In contrast to unsubstituted Ge{sub 3}Sb{sub 2}Te{sub 6}, quenching the NaCl-type high-temperature phase (stable above ?510 °C) easily yields a pseudocubic modification that is metastable at ambient conditions. Temperature-dependent powder diffraction reveals a broader stability range of the cubic high-temperature modification of Ge{sub 3}SbInTe{sub 6} compared to the ternary phases. In-containing samples partially decompose at ca. 300 °C but become homogeneous again when the high-temperature phase is formed. - Graphical abstract: Crystal structure of 33R-Ge{sub 3}SbInTe{sub 6} as determined by resonant X-ray diffraction, one example of the (GeTe){sub n}SbInTe{sub 3} series of compounds investigated. - Highlights: • The new compounds 21R-GeSbInTe{sub 4}, 9P-Ge{sub 2}SbInTe{sub 5} and 33R-Ge{sub 3}SbInTe are described. • The element distribution in 33R-Ge{sub 3}SbInTe{sub 6} was determined by resonant scattering. • The cation concentration in the crystal structure is strongly modulated. • The Sb substitution by In has a significant impact on phase transitions. • Results may be relevant for thermoelectrics and thin-film phase-change materials.

Fahrnbauer, Felix; Urban, Philipp; Welzmiller, Simon [Institute for Mineralogy, Crystallography and Materials Science, Leipzig University, Scharnhorststraße 20, 04275 Leipzig (Germany); Schröder, Thorsten; Rosenthal, Tobias [Department of Chemistry, Ludwig Maximilian University, Butenandtstraße 5-13, 81377 Munich (Germany); Oeckler, Oliver, E-mail: oliver.oeckler@gmx.de [Institute for Mineralogy, Crystallography and Materials Science, Leipzig University, Scharnhorststraße 20, 04275 Leipzig (Germany); Department of Chemistry, Ludwig Maximilian University, Butenandtstraße 5-13, 81377 Munich (Germany)

2013-12-15T23:59:59.000Z

125

Synthesis and optical study of green light emitting polymer coated CdSe/ZnSe core/shell nanocrystals  

SciTech Connect (OSTI)

Highlights: ? Synthesis of Polymer coated core CdSe and CdSe/ZnSe core/shell NCs. ? From TEM image, the spherical nature of CdSe and CdSe/ZnSe is obtained. ? Exhibiting green band photoemission peak at 541 nm and 549 nm for CdSe core and CdSe/ZnSe core/shell NCs. ? The shell thickness has been calculated by using superposition of quantum confinement energy model. - Abstract: CdSe/ZnSe Core/Shell NCs dispersed in PVA are synthesized by chemical method at room temperature. This is characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV/Vis spectra and photoluminescence spectroscopy (PL). TEM image shows the spherical nature of CdSe/ZnSe core/shell NCs. The red shift of absorption and emission peak of CdSe/ZnSe core/shell NCs as compared to CdSe core confirmed the formation of core/shell. The superposition of quantum confinement energy model is used for calculation of thickness of ZnSe shell.

Tripathi, S.K., E-mail: surya@pu.ac.in [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh 160 014 (India); Sharma, Mamta [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh 160 014 (India)

2013-05-15T23:59:59.000Z

126

Laser irradiation effects on the CdTe/ZnTe quantum dot structure studied by Raman and AFM spectroscopy  

SciTech Connect (OSTI)

Micro-Raman spectroscopy has been applied to investigate the impact of laser irradiation on semiconducting CdTe/ZnTe quantum dots (QDs) structures. A reference sample (without dots) was also studied for comparison. Both samples were grown by molecular beam epitaxy technique on the p-type GaAs substrate. The Raman spectra have been recorded for different time of a laser exposure and for various laser powers. The spectra for both samples exhibit peak related to the localized longitudinal (LO) ZnTe phonon of a wavenumber equal to 210 cm{sup -1}. For the QD sample, a broad band corresponding to the LO CdTe phonon related to the QD-layer appears at a wavenumber of 160 cm{sup -1}. With increasing time of a laser beam exposure and laser power, the spectra get dominated by tellurium-related peaks appearing at wavenumbers around 120 cm{sup -1} and 140 cm{sup -1}. Simultaneously, the ZnTe surface undergoes rising damage, with the formation of Te aggregates at the pinhole edge as reveal atomic force microscopy observations. Local temperature of irradiated region has been estimated from the anti-Stokes/Stokes ratio of the Te modes intensity and it was found to be close or exceeding ZnTe melting point. Thus, the laser damage can be explained by the ablation process.

Zielony, E.; Placzek-Popko, E.; Henrykowski, A.; Gumienny, Z.; Kamyczek, P.; Jacak, J. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Nowakowski, P.; Karczewski, G. [Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw (Poland)

2012-09-15T23:59:59.000Z

127

Synthesis, Crystal Structure, and Magnetism of ?-Fe1.00(2)Se1.00(3) Single Crystals  

SciTech Connect (OSTI)

Understanding iron-based superconductors requires high-quality impurity-free single crystals. So far they have been elusive for {beta}-FeSe and extraction of intrinsic materials properties has been compromised by several magnetic-impurity phases. Here, we report synchrotron-clean {beta}-FeSe superconducting single crystals grown via LiCl/CsCl flux method. Phase purity yields evidence for a defect-induced weak ferromagnetism that coexists with superconductivity below T{sub c}. In contrast to Fe{sub 1+y}Te-based superconductors, our results reveal that the interstitial Fe(2) site is not occupied and that all contribution to density of states at the Fermi level must come from in-plane Fe(1).

Petrovic, C.; Billinge, S.

2011-06-20T23:59:59.000Z

128

Electric transport properties of the pentatelluride materials HfTe{sub 5} and ZrTe{sub 5}  

SciTech Connect (OSTI)

The authors have measured the resistivity and thermopower of single crystals as well as polycrystalline pressed powders of the low-dimensional pentatelluride materials: HfTe{sub 5} and ZrTe{sub 5}. They have performed these measurements as a function of temperature between 5K and 320K. In the single crystals there is a peak in the resistivity for both materials at a peak temperature, T{sub p} where T{sub p} {approx} 80K for HfTe{sub 5} and T{sub p} {approx} 145K for ZrTe{sub 5}. Both materials exhibit a large p-type thermopower around room temperature which undergoes a change to n-type below the peak. These data are similar to behavior observed previously in these materials. They have also synthesized pressed powders of polycrystalline pentatelluride materials, HfTe{sub 5} and ZrTe{sub 5}. They have measured the resistivity and thermopower of these polycrystalline materials as a function of temperature between 5K and 320K. For the polycrystalline material, the room temperature thermopower for each of these materials is relatively high, +95 {micro}V/K and +65 {micro}V/K for HfTe{sub 5} and ZrTe{sub 5}, respectively. These values compare closely to thermopower values for single crystals of these materials. At 77 K, the thermopower is +55 {micro}V/K for HfTe{sub 5} and +35 {micro}V/K for ZrTe{sub 5}. In fact, the thermopower for the polycrystals decreases monotonically with temperature to T {approx} 5K, thus exhibiting p-type behavior over the entire range of temperature. As expected, the resistivity for the polycrystals is higher than the single crystal material, with values of 430 m{Omega}-cm and 24 m{Omega}-cm for HfTe{sub 5} and ZrTe{sub 5} respectively, compared to single crystal values of 0.35 m{Omega}-cm (HfTe{sub 5}) and 1.0 m{Omega}-cm (ZrTe{sub 5}). The authors have found that the peak in the resistivity evident in both single crystal materials is absent in these polycrystalline materials. They will discuss these materials in relation to their potential as candidates for thermoelectric applications.

Tritt, T.M.; Wilson, M.L.; Littleton, R.L. [and others

1997-07-01T23:59:59.000Z

129

Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films  

DOE Patents [OSTI]

A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

Gessert, Timothy A. (Conifer, CO)

1999-01-01T23:59:59.000Z

130

Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films  

DOE Patents [OSTI]

A method of is disclosed improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurium-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact. 11 figs.

Gessert, T.A.

1999-06-01T23:59:59.000Z

131

Real-time observation of nanoscale topological transitions in epitaxial PbTe/CdTe heterostructures  

SciTech Connect (OSTI)

The almost completely immiscible PbTe/CdTe heterostructure has recently become a prototype system for self-organized quantum dot formation based on solid-state phase separation. Here, we study by real-time transmission electron microscopy the topological transformations of two-dimensional PbTe-epilayers into, first, a quasi-one-dimensional percolation network and subsequently into zero-dimensional quantum dots. Finally, the dot size distribution coarsens by Ostwald ripening. The whole transformation sequence occurs during all stages in the fully coherent solid state by bulk diffusion. A model based on the numerical solution of the Cahn-Hilliard equation reproduces all relevant morphological and dynamic aspects of the experiments, demonstrating that this standard continuum approach applies to coherent solids down to nanometer dimensions. As the Cahn-Hilliard equation does not depend on atomistic details, the observed morphological transformations are general features of the model. To confirm the topological nature of the observed shape transitions, we developed a parameter-free geometric model. This, together with the Cahn-Hilliard approach, is in qualitative agreement with the experiments.

Groiss, H., E-mail: heiko.groiss@jku.at, E-mail: istvan.daruka@jku.at; Daruka, I., E-mail: heiko.groiss@jku.at, E-mail: istvan.daruka@jku.at; Springholz, G.; Schäffler, F. [Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz 4040 (Austria); Koike, K.; Yano, M. [Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535-8585 (Japan); Hesser, G. [Center for Surface- and Nanoanalytics (ZONA), Johannes Kepler University, Linz 4040 (Austria); Zakharov, N.; Werner, P. [Max Planck Institute of Microstructure Physics, Halle 06120 (Germany)

2014-01-01T23:59:59.000Z

132

Thermoelectric figure of merit of Ag{sub 2}Se with Ag and Se excess  

SciTech Connect (OSTI)

In the temperature range of 100-300 K, the electric ({sigma}) and thermoelectric ({alpha}{sub 0}) properties of Ag{sub 2}Se with an excess of Ag as high as {approx}0.1 at. % and Se as high as {approx}1.0 at. %, respectively, are investigated. From the data on {sigma}, {alpha}{sub 0}, and {chi}{sub tot} (thermal conductivities), the thermoelectric power {alpha}{sub 0}{sup 2}{sigma} and the figure of merit Z are calculated. It is found that {alpha}{sub 0}{sup 2}{sigma} and Z attain the peak values at room temperature and the electron concentration n {approx} 6.5 x 10{sup 18} cm{sup -3}.

Aliev, F. F., E-mail: farzali@physics.ab.az; Jafarov, M. B.; Eminova, V. I. [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan)

2009-08-15T23:59:59.000Z

133

Process Development for High Voc CdTe Solar Cells  

SciTech Connect (OSTI)

This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

Ferekides, C. S.; Morel, D. L.

2011-05-01T23:59:59.000Z

134

Paul Sellin, Radiation Imaging Group The role of defects on CdTe detector performance  

E-Print Network [OSTI]

Paul Sellin, Radiation Imaging Group The role of defects on CdTe detector performance P.J. Sellin1-destructive material characterisation techniques have been applied to CdTe wafers grown by the Travelling Heater Method Imaging Group PL mapping of whole CdTe wafers PL ( =819 nm) scan for two CdTe wafers, (left: wafer L700

Sellin, Paul

135

Self-Assembly of CdTe Tetrapods into Network Monolayers at the Air/Water  

E-Print Network [OSTI]

Self-Assembly of CdTe Tetrapods into Network Monolayers at the Air/Water Interface Matthew D present a versatile method for cadmium telluride (CdTe) tetrapod syn- thesis by utilizing multiple Te the tetrapod shape. CdTe tetra- pods are a promising inorganic semicon- ductor for photovoltaic cells due

Lin, Zhiqun

136

In-well pumped mid-infrared PbTe/CdTe quantum well vertical external cavity surface emitting lasers  

SciTech Connect (OSTI)

Optical in-well pumped mid-infrared vertical external cavity surface emitting lasers based on PbTe quantum wells embedded in CdTe barriers are realized. In contrast to the usual ternary barrier materials of lead salt lasers such as PbEuTe of PbSrTe, the combination of narrow-gap PbTe with wide-gap CdTe offers an extremely large carrier confinement, preventing charge carrier leakage from the quantum wells. In addition, optical in-well pumping can be achieved with cost effective and readily available near infrared lasers. Free carrier absorption, which is a strong loss mechanism in the mid-infrared, is strongly reduced due to the insulating property of CdTe. Lasing is observed from 85?K to 300?K covering a wavelength range of 3.3–4.2??m. The best laser performance is achieved for quantum well thicknesses of 20?nm. At low temperature, the threshold power is around 100 mW{sub P} and the output power more than 700 mW{sub P}. The significance of various charge carrier loss mechanisms are analyzed by modeling the device performance. Although Auger losses are quite low in IV–VI semiconductors, an Auger coefficient of C{sub A}?=?3.5?×?10{sup ?27} cm{sup 6} s{sup ?1} was estimated for the laser structure, which is attributed to the large conduction band offset.

Khiar, A., E-mail: amir.khiar@jku.at; Witzan, M.; Hochreiner, A.; Eibelhuber, M.; Springholz, G. [Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz (Austria); Volobuev, V. [Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz (Austria); National Technical University “Kharkiv Polytechnic Institute,” Frunze str. 21, 61002 Kharkiv (Ukraine)

2014-06-09T23:59:59.000Z

137

Cotinga Alirrufa La Cotinga Alirrufa se distribuye en  

E-Print Network [OSTI]

. inventarios y su estudio, la situación actual de esta especie en Colombia. Se considera casi Aphanotriccus

Cuervo, Andrés

138

Fluorescence relaxation dynamics of CdSe and CdSe/CdS core/shell quantum dots  

SciTech Connect (OSTI)

Time-resolved fluorescence spectra for colloidal CdSe and CdSe/CdS core/shell quantum dots have been investigated to know their electron relaxation dynamics at the maximum steady state fluorescence intensity. CdSe core and CdSe/CdS type I core-shell materials with different shell (CdS) thicknesses have been synthesized using mercaptoacetic acid as a capping agent. Steady state absorption and emission studies confirmed successful synthesis of CdSe and CdSe/CdS core-shell quantum dots. The fluorescence shows a tri-exponential decay with lifetimes 57.39, 7.82 and 0.96 ns for CdSe quantum dots. The lifetime of each recombination decreased with growth of CdS shell over the CdSe core, with maximum contribution to fluorescence by the fastest transition.

Kaur, Gurvir; Kaur, Harmandeep [Centre of Advanced Study in Physics, Department of Physics, Panjab University, Chandigarh-160014 (India); Tripathi, S. K., E-mail: surya@pu.ac.in [Centre of Advanced Study in Physics, Panjab University, Chandigarh- 160014 (India)

2014-04-24T23:59:59.000Z

139

Selective Area Epitaxy of CdTe on Nanopatterned Substrates.  

E-Print Network [OSTI]

?? HgCdTe/Si devices can potentially be significantly improved by the use of nanopatterned substrate structures on Si to control point and extended crystal defects. This… (more)

Fahey, Stephen

2013-01-01T23:59:59.000Z

140

Selective Area Epitaxy of CdTe on Nanopatterned Substrates.  

E-Print Network [OSTI]

??HgCdTe/Si devices can potentially be significantly improved by the use of nanopatterned substrate structures on Si to control point and extended crystal defects. This thesis… (more)

Fahey, Stephen D.

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Native defects in MBE-grown CdTe  

SciTech Connect (OSTI)

Deep-level traps in both n- and p-type CdTe layers, grown by molecular-beam epitaxy on GaAs substrates, have been investigated by means of deep-level transient spectroscopy (DLTS). Four of the traps revealed in the DLTS spectra, which displayed exponential kinetics for capture of charge carriers into the trap states, have been assigned to native point defects: Cd interstitial, Cd vacancy, Te antisite defect and a complex formed of the Te antisite and Cd vacancy. Three further traps, displaying logarithmic capture kinetics, have been ascribed to electron states of treading dislocations generated at the mismatched interface with the substrate and propagated through the CdTe layer.

Olender, Karolina; Wosinski, Tadeusz; Makosa, Andrzej; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz [Institute of Physics, Polish Academy of Sciences, Al. Lotników32/46, 02-668 Warsaw (Poland)

2013-12-04T23:59:59.000Z

142

A Search for Neutrinoless Double Beta Decay of Te-130  

E-Print Network [OSTI]

Bolometric experiments for neutrinoless double beta 3.2.1A Search for Neutrinoless Double Beta Decay of Te by AdamSpring 2010 A Search for Neutrinoless Double Beta Decay of

Bryant, Adam Douglas

2010-01-01T23:59:59.000Z

143

Summary of the TeV33 working group  

SciTech Connect (OSTI)

This summary of the TeV33 working group at Snowmass reports on work in the areas of Tevatron store parameters, the beam-beam interaction, Main Injector intensity (slip stacking), antiproton production, and electron cooling.

Bagley, P.P.; Bieniosek, F.M.; Colestock, P. [and others

1996-10-01T23:59:59.000Z

144

INTERACTION OF DEFECTS IN CdTe-CRYSTALS HEAVILY DOPED WITH CHLORINE  

E-Print Network [OSTI]

ClTe) and (VCd 2 ClTe)] form, but larger clusters as well. Thus, the compensation process in Cl doped CdTe, PAGE In order to clarify the mechanism of compensation in semi-insulating crystals of CdTe doped.1051/rphysap:01977001202023500 #12;236 FIG. 1. - Photoluminescence spectra of In and Cl doped CdTe. ND = 10 17

Paris-Sud XI, Université de

145

REVUE DE PHYSIQUE APPLIQUE PHASE DIAGRAM CALCULATION IN THE Te-Bi-Sb TERNARY SYSTEM  

E-Print Network [OSTI]

by the stoichio- metric compounds Bi2Te3-Sb2Te3 and SnTe-PbTe [16, 17] exhibit complete miscibility in both liquid 1976) Résumé. 2014 On calcule le diagramme de l'équilibre liquide-solide dans le système ternaire Te be achieved either by means of time- and labor-consuming measurements which permit plotting the equilibrium

Boyer, Edmond

146

Spectral photoresponse of ZnSe/GaAs(001) heterostructures with CdSe ultra-thin quantum well insertions  

SciTech Connect (OSTI)

We present a study of the spectral photoresponse (SPR) of ZnSe/GaAs(001) heterostructures for different ZnSe film thickness with and without CdSe ultra-thin quantum well (UTQW) insertions. We observe a significant increase of the SPR of heterostructures containing 3 monolayer thick CdSe UTQW insertions; these results encourage their use in photodetectors and solar cells.

Valverde-Chávez, D. A.; Sutara, F.; Hernández-Calderón, I. [Physics Department, Cinvestav-IPN, Av. IPN 2508, 07360 México, DF (Mexico)

2014-05-15T23:59:59.000Z

147

Twinning effect on photoluminescence spectra of ZnSe nanowires  

SciTech Connect (OSTI)

Bandgap engineering in a single material along the axial length of nanowires may be realized by arranging periodic twinning, whose twin plane is vertical to the axial length of nanowires. In this paper, we report the effect of twin on photoluminescence of ZnSe nanowires, which refers to the bandgap of it. The exciton-related emission peaks of transverse twinning ZnSe nanowires manifest a 10-meV-blue-shift in comparison with those of longitudinal twinning ZnSe nanowires. The blue-shift is attributed to quantum confinement effect, which is influenced severely by the proportion of wurtzite ZnSe layers in ZnSe nanowires.

Xu, Jing; Wang, Chunrui, E-mail: crwang@dhu.edu.cn; Wu, Binhe; Xu, Xiaofeng [Department of Applied Physics and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, 2999 Renmin Rd. North, Songjiang District, Shanghai 201620 (China); Chen, Xiaoshuang [Department of Applied Physics and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, 2999 Renmin Rd. North, Songjiang District, Shanghai 201620 (China); National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083 (China); Oh, Hongseok; Baek, Hyeonjun; Yi, Gyu-Chul [Department of Physics and Astronomy, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-747 (Korea, Republic of)

2014-11-07T23:59:59.000Z

148

Electrical characteristics of the CdTe-n-CdHgTe structure fabricated in a single molecular-beam epitaxy process  

SciTech Connect (OSTI)

An extraordinary shape of the capacitance-voltage characteristics of CdTe-CdHgTe structures has been detected; these characteristics include a specific 'hump' in the inversion region, the height of which increased severalfold under illumination. Additional measurements using an optical probe, measurements of current-voltage characteristics, and an analysis of the energy-band diagram of the structure showed the following. CdTe, in contrast to CdHgTe, is a p-type semiconductor with an acceptor concentration of 1 x 10{sup 16} cm{sup -3}; there is a hole inversion layer in CdHgTe at the boundary with CdTe, which causes the 'hump'; and the barrier height for holes at the CdTe-Cd{sub 0.43}Hg{sub 0.57}Te interface was determined as 0.13 eV.

Mashukov, Yu. P., E-mail: dr_mashukov@mail.ru; Mikhailov, N. N.; Vasilyev, V. V. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2010-09-15T23:59:59.000Z

149

Phonon self-energy and origin of anomalous neutron scattering spectra in SnTe and PbTe thermoelectrics  

SciTech Connect (OSTI)

The anharmonic lattice dynamics of rock-salt thermoelectric compounds SnTe and PbTe are investigated with inelastic neutron scattering (INS) and first-principles calculations. The experiments show that, surprisingly, although SnTe is closer to the ferroelectric instability, phonon spectra in PbTe exhibit a more anharmonic character. This behavior is reproduced in first-principles calculations of the temperature-dependent phonon self-energy. Our simulations reveal how the nesting of phonon dispersions induces prominent features in the self-energy, which account for the measured INS spectra and their temperature dependence. We establish that the phase-space for three-phonon scattering processes, rather than just the proximity to the lattice instability, is the mechanism determining the complex spectrum of the transverse-optical ferroelectric mode.

Li, Chen [ORNL] [ORNL; Ma, Jie [ORNL] [ORNL; May, Andrew F [ORNL] [ORNL; Cao, Huibo [ORNL] [ORNL; Christianson, Andrew D [ORNL] [ORNL; Ehlers, Georg [ORNL] [ORNL; Singh, David J [ORNL] [ORNL; Sales, Brian C [ORNL] [ORNL; Delaire, Olivier A [ORNL] [ORNL

2014-01-01T23:59:59.000Z

150

Coulomb interaction of acceptors in Cd{sub 1?x}Mn{sub x}Te/CdTe quantum dot  

SciTech Connect (OSTI)

The investigation on the effect of confining potential like isotropic harmonic oscillator type potential on the binding and the Coulomb interaction energy of the double acceptors in the presence of magnetic field in a Cd{sub 1?x}Mn{sub x}Te/CdTe Spherical Quantum Dot has been made for the Mn ion composition x=0.3 and compared with the results obtained from the square well type potential using variational procedure in the effective mass approximation.

Kalpana, P.; Nithiananthi, P., E-mail: kjkumar-gri@rediffmail.com; Jayakumar, K., E-mail: kjkumar-gri@rediffmail.com [Department of Physics, Gandhigram Rural University, Gandhigram-624302, TamilNadu (India); Reuben, A. Merwyn Jasper D. [Department of Physics, School of Engineering, Saveetha University, Thandalam, Chennai- 600104, TamilNadu (India)

2014-04-24T23:59:59.000Z

151

On the behavior of Bi in a CdTe lattice and the compensation effect in CdTe:Bi  

SciTech Connect (OSTI)

CdTe crystals of two types have been grown by the vertical Bridgman method: (i) crystals doped with Bi to {approx}10{sup 18} cm{sup -3} and (ii) double-doped (Bi + Cl) crystals with a Bi concentration of {approx}10{sup 18} cm{sup -3} and a Cl concentration of {approx}10{sup 17} cm{sup -3}. The temperature dependences of the resistivity, photoconductivity, and low-temperature photoluminescence are investigated for the crystals grown. Analysis has shown that doping with Bi (crystals of the first type) leads to compensation of the material. The resistivity of the CdTe:Bi samples at room temperature, depending on the doping level, is varied in the range of 10{sup 5}-10{sup 9} {Omega} cm. The hole concentration is determined by the acceptor level at E{sub v} + 0.4 eV in lightly doped CdTe:Bi samples and by the deep center at E{sub v} + 0.72 eV in heavily doped CdTe:Bi samples. Double doping leads to inversion of the conductivity type and reduces the resistivity to {approx}1 {Omega} cm. Heavily doped CdTe:Bi crystals and double-doped crystals exhibit the presence of acceptors with an ionization energy of 36 meV, which is atypical of CdTe.

Kolosov, S. A., E-mail: kolosov@sci.lebedev.ru; Krivobok, V. S., E-mail: krivobok@sci.lebedev.ru; Klevkov, Yu. V.; Adiyatullin, A. F. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

2013-04-15T23:59:59.000Z

152

Thermoelectric transport of Se-rich Ag{sub 2}Se in normal phases and phase transitions  

SciTech Connect (OSTI)

Small amount of Se atoms are used to tune the carrier concentrations (n{sub H}) and electrical transport in Ag{sub 2}Se. Significant enhancements in power factor and thermoelectric figure of merit (zT) are observed in the compositions of Ag{sub 2}Se{sub 1.06} and Ag{sub 2}Se{sub 1.08}. The excessive Se atoms do not change the intrinsically electron-conducting character in Ag{sub 2}Se. The detailed analysis reveals the experiment optimum carrier concentration in Ag{sub 2}Se is around 5?×?10{sup 18}?cm{sup ?3}. We also investigate the temperature of maximum zT and the thermoelectric transport during the first order phase transitions using the recently developed measurement system.

Mi, Wenlong; Lv, Yanhong [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences,1295 Dingxi Road, Shanghai 200050 (China); University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049 (China); Qiu, Pengfei; Shi, Xun, E-mail: xshi@mail.sic.ac.cn, E-mail: cld@mail.sic.ac.cn; Chen, Lidong, E-mail: xshi@mail.sic.ac.cn, E-mail: cld@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences,1295 Dingxi Road, Shanghai 200050 (China); Zhang, Tiansong [CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences,1295 Dingxi Road, Shanghai 200050 (China)

2014-03-31T23:59:59.000Z

153

Growth of highly doped p-type ZnTe films by pulsed laser ablation in molecular nitrogen  

SciTech Connect (OSTI)

Highly p-doped ZnTe films have been grown on semi-insulating GaAs (001) substrates by pulsed-laser ablation (PLA) of a stoichiometric ZnTe target in a high-purity N{sub 2} ambient without the use of any assisting (DC or AC) plasma source. Free hole concentrations in the mid-10{sup 19} cm{sup {minus}3} to > 10{sup 20} cm{sup {minus}3} range were obtained for a range of nitrogen pressures The maximum hole concentration equals the highest hole doping reported to date for any wide band gap II-VI compound. The highest hole mobilities were attained for nitrogen pressures of 50--100 mTorr ({approximately}6.5-13 Pa). Unlike recent experiments in which atomic nitrogen beams, extracted from RF and DC plasma sources, were used to produce p-type doping during molecular beam epitaxy deposition, spectroscopic measurements carried out during PLA of ZnTe in N{sub 2} do not reveal the presence of atomic nitrogen. This suggests that the high hole concentrations in laser ablated ZnTe are produced by a new and different mechanism, possibly energetic beam-induced reactions with excited molecular nitrogen adsorbed on the growing film surface, or transient formation of Zn-N complexes in the energetic ablation plume. This appears to be the first time that any wide band gap (Eg > 2 eV) II-VI compound (or other) semiconductor has been impurity-doped from the gas phase by laser ablation. In combination with the recent discovery that epitaxial ZnSe{sub l-x}S{sub x} films and heterostructures with continuously variable composition can be grown by ablation from a single target of fixed composition, these results appear to open the way to explore PLA growth and doping of compound semiconductors as a possible alternative to molecular beam epitaxy.

Lowndes, D.H.; Rouleau, C.M.; Budai, J.D.; Poker, D.B.; Geohegan, D.B.; Zhu, Shen [Oak Ridge National Lab., TN (United States); McCamy, J.W. [Harvard Univ., Cambridge, MA (United States). Div. of Applied Science; Puretzky, A. [Institute of Spectroscopy, Troitsk (Russian Federation)

1995-04-01T23:59:59.000Z

154

Glass formation and the third harmonic generation of Cu{sub 2}Se–GeSe{sub 2}–As{sub 2}Se{sub 3} glasses  

SciTech Connect (OSTI)

We have performed the investigation of the nonlinear optical properties namely the third harmonic generation (THG) of the glass-formation region in the Cu{sub 2}Se–GeSe{sub 2}–As{sub 2}Se{sub 3} system. The samples were synthesized by direct single-temperature method from high-purity elementary substances. We have found that the value of disorder parameter ? depends on the composition of the glassy alloys. The measurements show that increasing the Cu{sub 2}Se concentration leads to increased slope of the absorption edge, which may be explained by the decrease of the height of random potential relief for the electrons in the tails of the state density which border the band edges. A very sharp increase in the THG at low temperature was observed. Significant enhancement in THG was obtained with decreasing the energy gap, which agreed well with the nonlinear optical susceptibilities obtained from other glasses.

Reshak, A. H., E-mail: maalidph@yahoo.co.uk [New Technologies-Research Centre, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Klymovych, O. S.; Zmiy, O. F. [Department of Inorganic and Physical Chemistry, Lesya Ukrainka Eastern European National University, Voli Av. 13, 43025 Lutsk (Ukraine); Myronchuk, G. L.; Zamuruyeva, O. V. [Department of Physics, Lesya Ukrainka Eastern European National University, Voli Av. 13, 43025 Lutsk (Ukraine); Alahmed, Z. A. [Department of Physics and Astronomy, King Saud University, Riyadh 11451 (Saudi Arabia); Chyský, J.; Bila, Jiri [Department of Instrumentation and Control Engineering, Faculty of Mechanical Engineering, CTU in Prague, Technicka 4, 166 07 Prague 6 (Czech Republic); Kamarudin, H. [Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia)

2014-10-14T23:59:59.000Z

155

Influence of EDTA{sup 2-} on the hydrothermal synthesis of CdTe nanocrystallites  

SciTech Connect (OSTI)

Transformation from Te nanorods to CdTe nanoparticles was achieved with the assistance of EDTA as a ligand under hydrothermal conditions. Experimental results showed that at the beginning of reaction Te nucleated and grew into nanorods. With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Finally, nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were obtained. The effects of EDTA on the morphology and formation of CdTe nanoparticles were discussed in consideration of the strong ligand-effect of EDTA, which greatly decreased the concentration of Cd{sup 2+}. Furthermore, the possible formation process of CdTe nanoparticles from Te nanorods was further proposed. The crystal structure and morphology of the products were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). - Graphical Abstract: Firstly, Te nucleated and grew into nanorods in the presence of EDTA{sup 2-}. Then CdTe nucleus began to emerge on Te nanorods and finally monodispersed CdTe nanoparticles were obtained. Highlights: Black-Right-Pointing-Pointer EDTA serves as a strong ligand with Cd{sup 2+}. Black-Right-Pointing-Pointer The existence of EDTA constrains the nucleation of CdTe and promotes the formation of Te nanorods. Black-Right-Pointing-Pointer With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Black-Right-Pointing-Pointer Nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were finally obtained.

Gong Haibo [Center of Bio and Micro/nano Functional Materials, State Key Lab of Crystal Materials, Shandong University, Jinan 250100 (China); School of Materials Science and Engineering, University of Jinan, Jinan 250022 (China); Hao Xiaopeng, E-mail: xphao@sdu.edu.cn [Center of Bio and Micro/nano Functional Materials, State Key Lab of Crystal Materials, Shandong University, Jinan 250100 (China); Wu Yongzhong [Center of Bio and Micro/nano Functional Materials, State Key Lab of Crystal Materials, Shandong University, Jinan 250100 (China); Cao Bingqiang; Xu Hongyan [School of Materials Science and Engineering, University of Jinan, Jinan 250022 (China); Xu Xiangang [Center of Bio and Micro/nano Functional Materials, State Key Lab of Crystal Materials, Shandong University, Jinan 250100 (China)

2011-12-15T23:59:59.000Z

156

Electrical Characterization of Cu Composition Effects in CdS/CdTe Thin-Film Solar Cells with a ZnTe:Cu Back Contact: Preprint  

SciTech Connect (OSTI)

We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at {approx}0.55 eV whose concentration is significant when the Cu concentration is high. The device performance, which initially increases with Cu concentration then decreases, reflects the interplay between the positive influences and negative influences (increasing deep levels in CdTe) of Cu.

Li, J. V.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Dhere, R. G.; Young, M. R.; Levi, D. H.

2012-07-01T23:59:59.000Z

157

Milagro Observations of Potential TeV Emitters  

E-Print Network [OSTI]

This paper reports the results from three targeted searches of Milagro TeV sky maps: two extragalactic point source lists and one pulsar source list. The first extragalactic candidate list consists of 709 candidates selected from the Fermi-LAT 2FGL catalog. The second extragalactic candidate list contains 31 candidates selected from the TeVCat source catalog that have been detected by imaging atmospheric Cherenkov telescopes (IACTs). In both extragalactic candidate lists Mkn 421 was the only source detected by Milagro. This paper presents the Milagro TeV flux for Mkn 421 and flux limits for the brighter Fermi-LAT extragalactic sources and for all TeVCat candidates. The pulsar list extends a previously published Milagro targeted search for Galactic sources. With the 32 new gamma-ray pulsars identified in 2FGL, the number of pulsars that are studied by both Fermi-LAT and Milagro is increased to 52. In this sample, we find that the probability of Milagro detecting a TeV emission coincident with a pulsar increase...

Abdo, A A; Allen, B T; Aune, T; Barber, A S; Berley, D; Braun, J; Chen, C; Christopher, G E; DeYoung, T; Dingus, B L; Ellsworth, R W; Gonzalez, M M; Goodman, J A; Hays, E; Hoffman, C M; Huntemeyer, P H; Imran, A; Kolterman, B E; Linnemann, J T; McEnery, J E; Morgan, T; Mincer, A I; Nemethy, P; Pretz, J; Ryan, J M; Parkinson, P M Saz; Schneider, M; Shoup, A; Sinnis, G; Smith, A J; Vasileiou, V; Walker, G P; Williams, D A; Yodh, G B

2014-01-01T23:59:59.000Z

158

Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy  

SciTech Connect (OSTI)

CdTe/MgCdTe double heterostructures (DHs) are grown on InSb substrates using molecular beam epitaxy and reveal strong photoluminescence with over double the intensity of a GaAs/AlGaAs DH with an identical layer structure design grown on GaAs. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a Shockley-Read-Hall recombination lifetime of 86 ns, which is more than one order of magnitude longer than that of typical polycrystalline CdTe films. These findings indicate that monocrystalline CdTe/MgCdTe DHs effectively reduce surface recombination, have limited nonradiative interface recombination, and are promising for solar cells that could reach power conversion efficiencies similar to that of GaAs.

DiNezza, Michael J.; Liu, Shi; Kirk, Alexander P.; Zhang, Yong-Hang [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States) [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Zhao, Xin-Hao [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States) [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States)

2013-11-04T23:59:59.000Z

159

Workshop on Revisions to SE 2004 Mark Ardis David Budgen  

E-Print Network [OSTI]

Workshop on Revisions to SE 2004 Mark Ardis David Budgen Stevens Institute of Technology University-day workshop on needed revisions to Software Engineering 2004: Curriculum Guidelines for Undergraduate Degree Programs in Software Engineering (SE 2004). A brief overview of the current guidelines and their revision

Ardis, Mark

160

VOLUME 76, NUMBER 6 P H Y S I C A L R E V I E W L E T T E R S 5 FEBRUARY 1996 Emergence of Deep Levels in n-Type ZnSe under Hydrostatic Pressure  

E-Print Network [OSTI]

, State University of New York at Buffalo, Buffalo, New York 14260 R. M. Park1 and M. C. Tamargo2 1 Department of Chemistry, City College of the City University of New York, New York, New York 10031 (Received be inactive in ZnSe until pressure (or Te alloying) tunes the CBE to higher energy [1]. We report pressure

Weinstein, Benard.A.

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Isovector EMC effect explains the NuTeV anomaly  

E-Print Network [OSTI]

A neutron or proton excess in nuclei leads to an isovector-vector mean-field which, through its coupling to the quarks in a bound nucleon, implies a shift in the quark distributions with respect to the Bjorken scaling variable. We show that this result leads to an additional correction to the NuTeV measurement of sin^2(Theta_W). The sign of this correction is largely model independent and acts to reduce their result. Explicit calculation within a covariant and confining Nambu--Jona-Lasinio model predicts that this vector field correction accounts for approximately two-thirds of the NuTeV anomaly. We are therefore led to offer a new interpretation of the NuTeV measurement, namely, that it is further evidence for the medium modification of the bound nucleon wavefunction.

I. C. Cloët; W. Bentz; A. W. Thomas

2009-01-22T23:59:59.000Z

162

Isovector EMC Effect and the NuTeV Anomaly  

SciTech Connect (OSTI)

A neutron or proton excess in nuclei leads to an isovector-vector mean field which, through its coupling to the quarks in a bound nucleon, implies a shift in the quark distributions with respect to the Bjorken scaling variable. We show that this result leads to an additional correction to the NuTeV measurement of sin{sup 2}theta{sub W}. The sign of this correction is largely model independent and acts to reduce their result. Explicit calculation in nuclear matter within a covariant and confining Nambu-Jona-Lasinio model predicts that this vector field correction may account for a substantial fraction of the NuTeV anomaly. We are therefore led to offer a new interpretation of the NuTeV measurement, namely, that it provides further evidence for the medium modification of the bound nucleon wave function.

Cloeet, I. C. [Department of Physics, University of Washington, Seattle, Washington 98195-1560 (United States); Bentz, W. [Department of Physics, School of Science, Tokai University, Hiratsuka-shi, Kanagawa 259-1292 (Japan); Thomas, A. W. [Jefferson Lab, 12000 Jefferson Avenue, Newport News, Virginia 23606, USA and College of William and Mary, Williamsburg, Virginia 23187 (United States)

2009-06-26T23:59:59.000Z

163

What causes high resistivity in CdTe  

SciTech Connect (OSTI)

Shallow donors are often introduced into semiconductor materials to enhance n-type conductivity. However, they can sometimes also be used to obtain compensation between donors and acceptors, resulting in high resistivity in semiconductors. For example, CdTe can be made semi-insulating by shallow donor doping. This is routinely done to obtain high resistivity in CdTe-based radiation detectors. However, it is widely believed that the shallow donor alone cannot be responsible for the high resistivity in CdTe. This is based on the argument that it is practically impossible to control the shallow donor doping level so precisely that the free carrier density can be brought below the desired value suitable for radiation detection applications. Therefore, a deep native donor is usually assumed to exist in CdTe and pin the Fermi level near midgap. In this paper, we present our calculations on carrier statistics and energetics of shallow donors and native defects in CdTe and illustrate different donor-specific mechanisms for achieving carrier compensation. Our results show that the shallow donor can be used to reliably obtain high resistivity in CdTe without requiring additional deep donors. Since radiation detection applications require both high resistivity and good carrier transport, one should generally use shallow donors and shallow acceptors for carrier compensation and avoid deep centers that are effective carrier traps. This study highlights how the interaction between impurities and native defects intricately affects the Fermi level pinning in the semiconductor band gap and the associated resistivity of the material.

Biswas, Koushik [ORNL; Du, Mao-Hua [ORNL

2012-01-01T23:59:59.000Z

164

Precision Calibration of the NuTeV Calorimeter  

E-Print Network [OSTI]

NuTeV is a neutrino-nucleon deep-inelastic scattering experiment at Fermilab. The detector consists of an iron-scintillator sampling calorimeter interspersed with drift chambers, followed by a muon toroidal spectrometer. We present determinations of response and resolution functions of the NuTeV calorimeter for electrons, hadrons, and muons over an energy range of 4.8 to 190 GeV. The absolute hadronic energy scale is determined to an accuracy of 0.43%. We compare our measurements to predictions from calorimeter theory and GEANT3 simulations.

The NuTeV Collaboration; D. A. Harris; J. Yu

1999-08-20T23:59:59.000Z

165

High contrast, CdTe portal scanner for radiation therapy  

SciTech Connect (OSTI)

This paper reports on one of the most promising new technologies for improving the qualify of radiation therapy, the use of real-time systems to produce portal images. In the authors' approach, they are constructing a linear array of 256 CdTe photovoltaic detectors attached to a very compact linear scanner, all of which will be mounted in a cassette shaped package to be located under the patient table. The high stopping power of the CdTe allows a high contrast image to be made using only a single Linac pulse per line, resulting in a high contrast image in under 5 seconds.

Entine, G.; Squillante, M.R.; Hahn, R.; Cirignano, L.J.; McGann, W. (Radiation Monitoring Devices, Inc., Watertown, MA (United States)); Biggs, P.J. (Massachusetts General Hospital, Boston, MA (United States))

1992-10-01T23:59:59.000Z

166

Pressure-induced Phase Transition in Thiol-capped CdTe Nanoparticles  

SciTech Connect (OSTI)

Phase transitions for CdTe nanoparticles (NPs) under high pressure up to 37.0 GPa have been studied using fluorescence measurements. The phase transition from cinnarbar to rocksalt phase has been observed in CdTe NPs solution at 5.8 GPa, which is much higher than the phase transition pressure of bulk CdTe (3.8 GPa) and that of CdTe NPs in solid form (0.8 GPa). CdTe NPs solution therefore shows elevated phase transition pressure and enhanced stability against pressure compared with bulk CdTe and CdTe NPs in solid forms. The enhanced stability of CdTe NPs solution has been attributed to possible shape change in the phase transition and/or inhomogeneous strains in nanoparticle solutions.

Wu, F; Zaug, J; Young, C; Zhang, J Z

2006-11-29T23:59:59.000Z

167

Impurity and back contact effects on CdTe/CdS thin film solar cells.  

E-Print Network [OSTI]

??CdTe/CdS thin film solar cells are the most promising cost-effective solar cells. The goal of this project is to improve the performance for CdS/CdTe devices… (more)

Zhao, Hehong

2008-01-01T23:59:59.000Z

168

Ligand Mediated Surface Reconstruction of Photoluminescent CdTe Quantum Dots.  

E-Print Network [OSTI]

??Enhancement of photoluminescence (PL) is observed for light-shielded dodecylamine-capped colloidal CdTe quantum dots (CdTe/DDA QDs) dispersed in toluene after washing and recapping. The PL quantum… (more)

Onnink, A.J.

2013-01-01T23:59:59.000Z

169

Development of Materials and Structures for p-type Contacts in CdTe Solar Cells.  

E-Print Network [OSTI]

??Solar cells based on CdTe absorbers are attractive due to the optimal direct band gap energy and large absorption coefficient of CdTe, however, their performance… (more)

Ferizovic, Dino

2012-01-01T23:59:59.000Z

170

WAVELENGTH DEPENDENT EFFECTIVE TRAP DENSITY IN CdTe : EVIDENCE FOR THE PRESENCE OF TWO  

E-Print Network [OSTI]

1 WAVELENGTH DEPENDENT EFFECTIVE TRAP DENSITY IN CdTe : EVIDENCE FOR THE PRESENCE OF TWO.1016/S0030-4018(96)00516-0 #12;2 Photorefractive semiconductors like CdTe are characterized by a low

171

Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

for Improved Performance. Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance. Abstract: We report on CdSCdTe photovoltaic devices...

172

Change in the current-carrier concentration upon doping PbTe with gallium  

SciTech Connect (OSTI)

Upon doping PbTe with gallium, both high-resistivity samples with intrinsic conductivity and low-resistivity samples with electronic conductivity (n/sub e/ = 10/sup 18/ cm/sup -3/) are produced on the PbTe-GaTe section. A thorough investigation of the dependence of the thermo-emf of Pb/sub 1-x/Ga/sub x/Te on the excess Pb and Te side showed the presence of a wide region with intrinsic conductivity. The experimental data can be explained by the fact that impure gallium in PbTe has negative Hubbard energy and stabilizes the Fermi level almost at the center of the forbidden band. At high gallium concentrations, Ga/sub 2/Te/sub 3/ precipitates at first, and then GaTe precipitates as well. The lead forming in excess transforms Ga/sup 3 +/ to Ga/sup +/, which produces the electronic conductivity in the material.

Bushmarina, G.S.; Gruzinov, B.F.; Drabkin, I.A.; Lev, E.Ya.; Moizhes, B.Ya; Suprun, S.G.

1987-07-01T23:59:59.000Z

173

PRECONTACT SURFACE CHEMISTRY EFFECTS ON CdWCdTe SOLAR CELL PERFORMANCE AND STABILITY  

E-Print Network [OSTI]

PRECONTACT SURFACE CHEMISTRY EFFECTS ON CdWCdTe SOLAR CELL PERFORMANCE AND STABILITY Dave Albin (CBD) and close spaced sublimation (CSS) respectively. CdTe growth is followed by either solution

Sites, James R.

174

Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)  

SciTech Connect (OSTI)

Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

Gessert, T. A.

2010-09-01T23:59:59.000Z

175

Department of Plant ProtectionDepartment of Plant Protection BiologyBiology (www(www.slu.se).slu.se)  

E-Print Network [OSTI]

the safety manual as a useful tool in the safety work. Safety work is an on-going process, if something.2.3 Greenhouse connected to the Horticum building 6. Radioactivity (from the ICM safety manual) 6.1 working(www.slu.se).slu.se) Safety Manual January, 2013 Note: Suggestions for improvements and updates are necessary to keep

176

p1 RJM 07/01/14 SE3SE11 -Sustainable Electrical Energy -Gaia Dr Richard Mitchell 2014  

E-Print Network [OSTI]

p1 RJM 07/01/14 SE3SE11 - Sustainable Electrical Energy - Gaia © Dr Richard Mitchell 2014 1 : Sustainable Electrical Energy - Gaia This module considers the sustainable aspects of Electrical Energy For instance, various colleagues, including Dr George Whitfield, researched photovoltaic solar systems

Mitchell, Richard

177

Quieres ser voluntario de Fundacin Valora? Elige el perfil que mejor se adapte a ti  

E-Print Network [OSTI]

. Perfil creativo Si te gusta el diseño y eres imaginativo, siempre podrás poner tu creatividad en

Rey Juan Carlos, Universidad

178

Indication of Te segregation in laser-irradiated ZnTe observed by in situ coherent-phonon spectroscopy  

SciTech Connect (OSTI)

We irradiate a ZnTe single crystal with 10-fs laser pulses at a repetition rate of 80?MHz and investigate its resulting gradual modification by means of coherent-phonon spectroscopy. We observe the emergence of a phonon mode at about 3.6?THz whose amplitude and lifetime grow monotonously with irradiation time. The speed of this process depends sensitively on the pump-pulse duration. Our observations strongly indicate that the emerging phonon mode arises from a Te phase induced by multiphoton absorption of incident laser pulses. A potential application of our findings is laser-machining of microstructures in the bulk of a ZnTe crystal, a highly relevant electrooptic material.

Shimada, Toru [Fritz Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin (Germany); Hirosaki University, 1 Bunkyo-cho, Hirosaki, Aomori 036-8152 (Japan); Kamaraju, N., E-mail: nkamaraju@lanl.gov [Fritz Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin (Germany); Los Alamos National Laboratory, Center for Integrated Nanotechnologies, Los Alamos, New Mexico 87545 (United States); Frischkorn, Christian [Department of Physics, Free University of Berlin, Arnimallee 14, 14195 Berlin (Germany); Wolf, Martin; Kampfrath, Tobias [Fritz Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin (Germany)

2014-09-15T23:59:59.000Z

179

1. INTRODUCTION CdTe/CdS solar cells are among the most promising  

E-Print Network [OSTI]

Te/CdS SOLAR CELLS A.Romeo, A.N. Tiwari, and H. Zogg Thin Films Physics Group, Institute of Quantum ElectronicsTe/CdS thin film solar cells. The merits of different TCOs and the properties of the CdTe/CdS solar cells1. INTRODUCTION CdTe/CdS solar cells are among the most promising devices for low cost and high

Romeo, Alessandro

180

Detector Performance of Ammonium-Sulfide-Passivated CdZnTe and CdMnTe Materials  

SciTech Connect (OSTI)

Dark currents, including those in the surface and bulk, are the leading source of electronic noise in X-ray and gamma detectors, and are responsible for degrading a detector's energy resolution. The detector material itself determines the bulk leakage current; however, the surface leakage current is controllable by depositing appropriate passivation layers. In previous research, we demonstrated the effectiveness of surface passivation in CZT (CdZnTe) and CMT (CdMnTe) materials using ammonium sulfide and ammonium fluoride. In this research, we measured the effect of such passivation on the surface states of these materials, and on the performances of detectors made from them.

Kim, K.H.; Bolotnikov, A.E.; Camarda, G.S.; Marchini, L.; Yang, G.; Hossain, A.; Cui, Y.; Xu, L.; and James, R.B.

2010-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

The PeTroleum InsTITuTe Annual report 2008 -2009 The PeTroleum InsTITuTe  

E-Print Network [OSTI]

PArTmenTs AuP dePArTmenT 8· College of ArTs And sCIenCes 24· ChemICAl engIneerIng dePArTmenT 47· eleCTrICAl engIneerIng dePArTmenT 61· meChAnICAl engIneerIng dePArTmenT 83· PeTroleum engIneerIng dePArTmenT 95· PeTroleumThe PeTroleum InsTITuTe Annual report 2008 - 2009 The PeTroleum InsTITuTe Annual report - Academic

182

Solar Energy Materials & Solar Cells 91 (2007) 13881391 Bifacial configurations for CdTe solar cells  

E-Print Network [OSTI]

Solar Energy Materials & Solar Cells 91 (2007) 1388­1391 Bifacial configurations for CdTe solar We present a different back contact for CdTe solar cell by the application of only a transparent that acts as a free-Cu stable back contact and at the same time allows to realize bifacial CdTe solar cells

Romeo, Alessandro

183

PHOTOSCANNING OF CdTe DETECTORS FOR INVESTIGATION OF CRYSTAL QUALITY  

E-Print Network [OSTI]

349 PHOTOSCANNING OF CdTe DETECTORS FOR INVESTIGATION OF CRYSTAL QUALITY AND CONTACT BEHAVIOUR P. A. Preliminary results are reported on light scanning of CdTe detectors with a mechanical scanning system using is absorbed in CdTe with an absorption length of appro- ximately 10 gm. The two mirrors were driven

Paris-Sud XI, Université de

184

Optical implementation of entangled multi-spin states in a CdTe quantum well  

E-Print Network [OSTI]

Optical implementation of entangled multi-spin states in a CdTe quantum well J.M. Baoa , A in a CdTe quantum well. Our method, relying on the exchange interaction between optically excited holes; 78.67.De; 42.50.Md Keywords: A. CdTe quantum wells; D. Ultrafast optics; D. Quantum computation; D

Bao, Jiming

185

Structural tuning of color chromaticity through nonradiative energy transfer by interspacing CdTe nanocrystal monolayers  

E-Print Network [OSTI]

Structural tuning of color chromaticity through nonradiative energy transfer by interspacing CdTe transfer in the heterostructure of layer-by-layer spaced CdTe nanocrystal NC solids. We achieved highly demonstrated efficient FRET in LbL assembled bilayers of CdTe NCs. In another structure, alternating layers

Demir, Hilmi Volkan

186

USE OF VARIOUS DEVICE GEOMETRIES TO IMPROVE THE PERFORMANCE OF CdTe DETECTORS (*)  

E-Print Network [OSTI]

343 USE OF VARIOUS DEVICE GEOMETRIES TO IMPROVE THE PERFORMANCE OF CdTe DETECTORS (*) K. ZANIO. - The most direct method of increasing the resolution of CdTe gamma ray and x-ray detectors is to increase of Environmental and Biomedical Research. doped CdTe. Devices do not polarize as those having blocking contacts

Paris-Sud XI, Université de

187

NUMERICAL MODELING OF CIGS AND CdTe SOLAR CELLS: SETTING THE BASELINE  

E-Print Network [OSTI]

NUMERICAL MODELING OF CIGS AND CdTe SOLAR CELLS: SETTING THE BASELINE M. Gloeckler, A. Consequently specific baseline parameters for CIGS and CdTe are proposed. The modeling results important complications that are often found in experimental CIGS and CdTe solar cells. 1. INTRODUCTION

Sites, James R.

188

USE OF CdTe DETECTORS IN BONE MINERAL MEASUREMENTS J. VOGEL, J. ULLMAN  

E-Print Network [OSTI]

375 USE OF CdTe DETECTORS IN BONE MINERAL MEASUREMENTS J. VOGEL, J. ULLMAN Nuclear Medicine. Cet ensemble emploie des détecteurs CdTe mesurant la transmission d'un faisceau collimaté de rayons X periods of prolonged bedrest or weightlessness. The unit employs CdTe detectors to mea- sure

Paris-Sud XI, Université de

189

Nonresonant four-wave mixing in photorefractive CdTe crystals using a picosecond parametric generator  

E-Print Network [OSTI]

Nonresonant four-wave mixing in photorefractive CdTe crystals using a picosecond parametric at nonresonant interaction, thus allowing a study of time-resolved carrier transport in CdTe crystals to be made space-charge SC electric fields have been studied in vanadium or germanium doped semi-insulating CdTe

Boyer, Edmond

190

IMPROVEMENTS IN THE MANUFACTURE OF CdTe GAMMA RAY DETECTORS  

E-Print Network [OSTI]

141 IMPROVEMENTS IN THE MANUFACTURE OF CdTe GAMMA RAY DETECTORS S. BRELANT The Aerospace been made in the quality of chlorine-doped CdTe crystals manufactured by the traveling heater method applications of CdTe gamma ray detectors has been the continuous measurement of ablating materials

Paris-Sud XI, Université de

191

CRYSTAL GROWTH BY SOLVENT TECHNIQUES AND CHARACTERISTIC PROPERTIES OF CdTe  

E-Print Network [OSTI]

117 CRYSTAL GROWTH BY SOLVENT TECHNIQUES AND CHARACTERISTIC PROPERTIES OF CdTe T. TAGUCHI, J and holes are obtained. REVUE DE PHYSIQUE APPLIQUÃ?E TOME 12, FÃ?VRIER 1977, PAGE 117 1. Introduction. - CdTe during donor doping since CdTe has a strong tendency for self compensation However, in spite of a great

Paris-Sud XI, Université de

192

APPLICATIONS OF CdTe. A REVIEW Mobil Tyco Solar Energy Corporation, 16 Hickory Drive  

E-Print Network [OSTI]

APPLICATIONS OF CdTe. A REVIEW F. V. WALD Mobil Tyco Solar Energy Corporation, 16 Hickory Drive sont également données. Abstract. 2014 The review considers the history of CdTe in short form advanced. II. APPLICATIONS OF CADMIUM TELLURIDE AND DEVICES BASED ON THIS MATERIAL. Section II. 1 : CdTe

Paris-Sud XI, Université de

193

CHARACTERIZATION OF CdTe WITH PHOTOELECTRONIC TECHNIQUES A. M. MANCINI and C. MANFREDOTTI  

E-Print Network [OSTI]

255 CHARACTERIZATION OF CdTe WITH PHOTOELECTRONIC TECHNIQUES A. M. MANCINI and C. MANFREDOTTI seront discutés dans le cas où elles sont mises en 0153uvre sur CdTe. Abstract. 2014 Thermally stimulated current (TSC) and space-charge limited current (SCLC) measurements have been performed in CdTe grown

Paris-Sud XI, Université de

194

BIOTELEMETRY BASED ON CdTe-DETECTORS J. BOJSEN, N. ROSSING, O. SOEBERG and S. VADSTRUP  

E-Print Network [OSTI]

radionuclide detectors (CdTe) 2-3 mm3 (developed by C. R. N. Strasbourg) have been tested with special to the skin for surface detection [2, 3]. Among several new semiconductor materials the cadmium telluride (CdTe. - The detector probe, developed by C. R. N., Strasbourg, France, consists of a CdTe- crystal (2-3 mm

Paris-Sud XI, Université de

195

EFFECT OF BACK-CONTACT COPPER CONCENTRATION ON CdTe CELL OPERATION  

E-Print Network [OSTI]

EFFECT OF BACK-CONTACT COPPER CONCENTRATION ON CdTe CELL OPERATION A.O. Pudov, M. Gloeckler, S of Mechanical Engineering Colorado State University, Ft. Collins, CO 80523 ABSTRACT CdTe solar cells were Copper is commonly used to form low-barrier contacts to p-type CdTe absorbers. Copper, however, is a fast

Sites, James R.

196

CHARACTERIZATION OF UNDOPED HIGH RESISTIVITY CdTe GROWN BY A THM METHOD  

E-Print Network [OSTI]

185 CHARACTERIZATION OF UNDOPED HIGH RESISTIVITY CdTe GROWN BY A THM METHOD R. STUCK, J. C. MULLER techniques of cadmium tellu- ride crystals (CdTe) allowed to obtain high resistivity crystals of detector shape of the phase diagram of CdTe, it seemed interesting to characterize these materials in order

Paris-Sud XI, Université de

197

Exploring the Potential for High-Quality Epitaxial CdTe Solar Cells , Ana Kanevce2  

E-Print Network [OSTI]

Exploring the Potential for High-Quality Epitaxial CdTe Solar Cells Tao Song1 , Ana Kanevce2 National Renewable Energy Laboratory, Golden, CO, 80401, USA Abstract -- Traditional polycrystalline CdTeV and ~ 20%. Epitaxial CdTe with high-quality, low defect-density, and high carrier density, could yield

Sites, James R.

198

Biaxial CdTe/CaF2 films growth on amorphous surface , F. Tang a  

E-Print Network [OSTI]

electron microscopy Metal organic chemical vapor deposition A continuous and highly biaxially textured CdTe nanorods as a buffer layer. The interface between the CdTe film and CaF2 nanorods and the morphology of the CdTe film were studied by transmission electron microscopy (TEM) and scanning electron microscopy

Wang, Gwo-Ching

199

NREL study may provide future guidance in improving CdS/CdTe photovoltaic device performance.  

E-Print Network [OSTI]

NREL study may provide future guidance in improving CdS/CdTe photovoltaic device performance. The majority of minority carrier lifetime (MCL) studies performed on CdS/CdTe photovoltaic (PV) devices have Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices." Proc. 37th IEEE Photovoltaic

200

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS Submitted by Kuo-Jui Hsiao ELECTRON- REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS SOLAR CELLS The CdTe thin-film solar cell has a large absorption coefficient and high theoretical

Sites, James R.

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Carbon Sequestration in Terrestrial Ecosystems (CSiTE) PRINCIPAL INVESTIGATOR: Stan D. Wullschleger  

E-Print Network [OSTI]

Carbon Sequestration in Terrestrial Ecosystems (CSiTE) PRINCIPAL INVESTIGATOR: Stan D. Wullschleger://csite.eds.ornl.gov PROJECT DESCRIPTION The Carbon Sequestration in Terrestrial Ecosystems (CSiTE) project conducts research of switchgrass growing in the field. #12;Carbon Sequestration in Terrestrial Ecosystems (CSiTE) tion of inputs

202

Inkrafttreten Diese Ordnung tritt mit Genehmigung durch die Se-  

E-Print Network [OSTI]

§ 7 Inkrafttreten Diese Ordnung tritt mit Genehmigung durch die Se- natorin für Bildung und. Artikel 2 Die �nderung tritt nach der Genehmigung des Rek- tors mit Wirkung vom 1. Oktober 2007 in Kraft

Hoffmeister, Thomas S.

203

Hot exciton transport in ZnSe quantum wells  

E-Print Network [OSTI]

The in-plane transport of excitons in ZnSe quantum wells is investigated directly by microphotoluminescence in combination with a solid immersion lens. Due to the strong Froehlich coupling, the initial kinetic energy of the excitons is well...

Zhao, Hui; Moehl, Sebastian; Wachter, Sven; Kalt, Heinz

2002-02-01T23:59:59.000Z

204

Lattice vibrations of pure and doped GaSe  

SciTech Connect (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

205

Results of a Si/CdTe Compton Telescope  

E-Print Network [OSTI]

We have been developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. We use a Si strip and CdTe pixel detector for the Compton telescope to cover an energy range from 60 keV. For energies above several hundred keV, the higher efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as an absorber and a scatterer. In order to demonstrate the spectral and imaging capability of a CdTe-based Compton Telescope, we have developed a Compton telescope consisting of a stack of CdTe pixel detectors as a small scale prototype. With this prototype, we succeeded in reconstructing images and spectra by solving the Compton equation from 122 keV to 662 keV. The energy resolution (FWHM) of reconstructed spectra is 7.3 keV at 511 keV and 3.1 keV at 122 keV, respectively. The angular resolution obtained at 511 keV is measured to be 12.2 degree (FWHM).

Kousuke Oonuki; Takaaki Tanaka; Shin Watanabe; Shin'ichiro Takeda; Kazuhiro Nakazawa; Takefumi Mitani; Tadayuki Takahashi; Hiroyasu Tajima; Yasushi Fukazawa; Masaharu Nomachi

2005-09-21T23:59:59.000Z

206

Ion-beam-induced damage formation in CdTe  

SciTech Connect (OSTI)

Damage formation in <111>- and <112>-oriented CdTe single crystals irradiated at room temperature and 15 K with 270 keV Ar or 730 keV Sb ions was investigated in situ using Rutherford backscattering spectroscopy (RBS) in channeling configuration. Defect profiles were calculated from the RBS spectra using the computer code DICADA and additional energy-dependent RBS measurements were performed to identify the type of defects. At both temperatures no formation of a buried amorphous layer was detected even after prolonged irradiation with several 10{sup 16} ions/cm{sup 2}. The fact that CdTe is not rendered amorphous even at 15 K suggests that the high resistance to amorphization is caused by the high ionicity of CdTe rather than thermal effects. The calculated defect profiles show the formation of a broad defect distribution that extends much deeper into the crystal than the projected range of the implanted ions at both temperatures. The post-range defects in CdTe thus do not seem to be of thermal origin either, but are instead believed to result from migration driven by the electronic energy loss.

Rischau, C. W.; Schnohr, C. S.; Wendler, E.; Wesch, W. [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

2011-06-01T23:59:59.000Z

207

Diffuse TeV Emission at the Galactic Centre  

E-Print Network [OSTI]

The High-Energy Stereoscopic System (HESS) has detected intense diffuse TeV emission correlated with the distribution of molecular gas along the galactic ridge at the centre of our Galaxy. Earlier HESS observations of this region had already revealed the presence of several point sources at these energies, one of them (HESS J1745-290) coincident with the supermassive black hole Sagittarius A*. It is still not entirely clear what the origin of the TeV emission is, nor even whether it is due to hadronic or leptonic interactions. It is reasonable to suppose, however, that at least for the diffuse emission, the tight correlation of the intensity distribution with the molecular gas indicates a pionic-decay process involving relativistic protons. In this paper, we explore the possible source(s) of energetic hadrons at the galactic centre, and their propagation through a turbulent medium. We conclude that though Sagittarius A* itself may be the source of cosmic rays producing the emission in HESS J1745-290, it cannot be responsible for the diffuse emission farther out. A distribution of point sources, such as pulsar wind nebulae dispersed along the galactic plane, similarly do not produce a TeV emission profile consistent with the HESS map. We conclude that only a relativistic proton distribution accelerated throughout the inter-cloud medium can account for the TeV emission profile measured with HESS.

Elizabeth Wommer; Fulvio Melia; Marco Fatuzzo

2008-04-18T23:59:59.000Z

208

AL TE X 2" The macro package for TEX  

E-Print Network [OSTI]

such as xdvi, which actually uses the `.dvi' file. 2.A "transcript" or `.log' file that contains summary-201-13448-9, published jointly by the American Mathemat* *ical Society and Addison-Wesley Publishing Company-Wesley Publ* *ish- ing Company, 2nd edition, 1994. The LaTeX Companion, by Michel Goossens, Frank

Mintmire, John W.

209

Simple shear processing of bulk BI?TE? alloys  

E-Print Network [OSTI]

The objective of this work is to determine the appropriate extrusion conditions of cast Bi?Te? alloys via equal channel angular extrusion (ECAE) to produce material that has a fine grain size (5~30[]m), uniform grain morphology and low grain...

Im, Jae-taek

2001-01-01T23:59:59.000Z

210

TeV Particle Astrophysics II: Summary comments  

E-Print Network [OSTI]

A unifying theme of this conference was the use of different approaches to understand astrophysical sources of energetic particles in the TeV range and above. In this summary I review how gamma-ray astronomy, neutrino astronomy and (to some extent) gravitational wave astronomy provide complementary avenues to understanding the origin and role of high-energy particles in energetic astrophysical sources.

Thomas K. Gaisser

2006-12-11T23:59:59.000Z

211

STAFF POSITION DESCRIPTION SAN JOSE STA TE HUMAN RESOURCES  

E-Print Network [OSTI]

STAFF POSITION DESCRIPTION SAN JOSE STA TE HUMAN RESOURCES UNIVERSITY Workforce Planning l: 408-924-2250 I408-924-1784 (fax) Job Description Staff Date: Workforce Planning, Human Resources (Name [Workforce Planning reviews the CSU classification standards with essential duties of the positions] F

Su, Xiao

212

Nanoscale order in ZnSe:(Mg, O)  

SciTech Connect (OSTI)

Self-assembling of 1O4Mg identical tetrahedral clusters resulting in the nanoscale order in ZnSe:(Mg, O) is presented. Co-doping transforms ZnSe into Mg{sub x}Zn{sub 1?x}O{sub y}Se{sub 1?y} alloy of MgO, MgSe, ZnO and ZnSe. The decrease of a sum of the enthalpies of the constituent compounds and diminution of the strain energy are the causes of this phenomenon. The self-assembling conditions are obtained from the free energy minimum when magnesium and oxygen are in the dilute and ultra dilute limits, correspondingly. The occurrence of 1O4Mg clusters and completion of self-assembling when all oxygen atoms are in clusters are results of the continuous phase transitions. The self-assembling occurrence temperature does not depend on the oxygen content and it is a function of magnesium concentration. Mg{sub x}Zn{sub 1?x}O{sub y}Se{sub 1?y} with all oxygen atoms in clusters can be obtained in temperature ranges from T = 206 °C (x = 0.001, y = 1×10{sup ?4}) to T = 456 °C (x = 0.01, y = 1×10{sup ?4}) and from T = 237 °C (x = 0.001, y = 1×10{sup ?6}) to T = 462 °C (x = 0.01, y = 1×10{sup ?6})

Elyukhin, Vyacheslav A. [Department of Electrical Engineering, Centro de Investigación y de Estudios Avanzados del IPN, Avenida Instituto Politecnico Nacional 2508, 07360 México (Mexico)

2014-02-21T23:59:59.000Z

213

Carrier dynamics and activation energy of CdTe quantum dots in a Cd{sub x}Zn{sub 1-x}Te quantum well  

SciTech Connect (OSTI)

We investigate the optical properties of CdTe quantum dots (QDs) in a Cd{sub 0.3}Zn{sub 0.7}Te quantum well (QW) grown on GaAs (100) substrates. Carrier dynamics of CdTe/ZnTe QDs and quantum dots-in-a-well (DWELL) structure is studied using time-resolved photoluminescence (PL) measurements, which show the longer exciton lifetime of the DWELL structure. The activation energy of the electrons confined in the DWELL structure, as obtained from the temperature-dependent PL spectra, was also higher than that of electrons confined in the CdTe/ZnTe QDs. This behavior is attributed to the better capture of carriers into QDs within the surrounding QW.

Han, W. I.; Lee, J. H.; Yu, J. S.; Choi, J. C. [Department of Physics, Yonsei University, Wonju 220-710 (Korea, Republic of); Lee, H. S. [Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

2011-12-05T23:59:59.000Z

214

Exploring Resonance Levels and Nanostructuring in the PbTe?CdTe System and Enhancement of the Thermoelectric Figure of Merit  

SciTech Connect (OSTI)

We explored the effect of Cd substitution on the thermoelectric properties of PbTe in an effort to test a theoretical hypothesis that Cd atoms on Pb sites of the rock salt lattice can increase the Seebeck coefficient via the formation of a resonance level in the density of states near the Fermi energy. We find that the solubility of Cd is less than previously reported, and CdTe precipitation occurs to create nanostructuring, which strongly suppresses the lattice thermal conductivity. We present detailed characterization including structural and spectroscopic data, transmission electron microscopy, and thermoelectric transport properties of samples of PbTe?x% CdTe?0.055% PbI{sub 2} (x = 1, 3, 5, 7, 10), PbTe?1% CdTe?y% PbI{sub 2} (y = 0.03, 0.045, 0.055, 0.08, 0.1, 0.2), PbTe?5% CdTe?y% PbI{sub 2} (y = 0.01, 0.03, 0.055, 0.08), and PbTe?1% CdTe?z% Sb (z = 0.3, 0.5, 1, 1.5, 2, 3, 4, 5, 6). All samples follow the Pisarenko relationship, and no enhancement of the Seebeck coefficient was observed that could be attributed to a resonance level or a distortion in the density of states. A maximum ZT of 1.2 at 720 K was achieved for the PbTe?1% CdTe?0.055% PbI{sub 2} sample arising from a high power factor of 17 ?W/(cm K{sup 2}) and a very low lattice thermal conductivity of 0.5 W/(m K) at 720 K.

Ahn, Kyunghan; Han, Mi-Kyung; He, Jiaqing; Androulakis, John; Ballikaya, Sedat; Uher, Ctirad; Dravid, Vinayak; Kanatzidis, Mercouri G.

2010-01-01T23:59:59.000Z

215

Estudios de Medicina A los 16 aos se matricula de Medicina en el CEU, el primer ao que se  

E-Print Network [OSTI]

1 Estudios de Medicina A los 16 años se matricula de Medicina en el CEU, el primer año que se Grado de Licenciatura (1982), en la recién creada Facultad de Medicina de Alicante. El acontecimiento Facultad de Medicina de Alicante. En 1984 es Jefe de la Unidad de Educación Sanitaria y en 1988, Jefe de la

Escolano, Francisco

216

High efficiency photodetectors fabricated by electrostatic layer-by-layer self-assembly of CdTe quantum dots  

E-Print Network [OSTI]

High efficiency photodetectors fabricated by electrostatic layer-by-layer self-assembly of CdTe 20 October 2008 We demonstrate high-performance photodetectors from multilayers of CdTe quantum dots. The synthesis of CdTe QDs in aqueous solution using cadmium perchlorate hydrate and Al2Te3 was previously re

Lin, Lih Y.

217

ROLE OF COPPER IN THE PERFORMANCE OF CdS/CdTe SOLAR CELLS * , D. Albin2  

E-Print Network [OSTI]

simulations to reproduce and explain some of the experimental results. Introduction The performance of CdTe Cucd in CdTe [1,2]. Cu can also migrate along grain boundaries toward the main junction. The standard with a relatively simpler one in which Cu metal of varying thickness is evaporated on Te-rich CdTe surfaces

Sites, James R.

218

1. INTRODUCTION CdTe/CdS is one of the most promising solar cell for low  

E-Print Network [OSTI]

with CdTe grown by close space sublimation, electrodeposition, spray pyrolysis, vacuum evaporation and RF conversion of CdTe layers, as well as for the intermixing of CdS-CdTe. An optimum annealing condition is required for the formation of an appropriate CdTe1-x-Sx intermixed interface. It is desirable to separately

Romeo, Alessandro

219

High Efficiency CdTe/CdS Thin Film Solar Cells Prepared by Treating CdTe Films with a Freon Gas in Substitution of CdCl2  

E-Print Network [OSTI]

High Efficiency CdTe/CdS Thin Film Solar Cells Prepared by Treating CdTe Films with a Freon Gas delle Scienze, 37/A-43010 Fontanini, Parma, Italy ABSTRACT: CdTe/CdS thin film solar cells have reached in the preparation of high efficiency CdTe/CdS solar cells is the activation treatment of CdTe film. Most research

Romeo, Alessandro

220

Straightforward Route to the Adamantane Clusters [Sn4Q10]4-(Q ) S, Se, Te) and Use in the Assembly of Open-Framework Chalcogenides  

E-Print Network [OSTI]

. For example, in a recent publication it was demonstrated that high surface area porous chalcogenide aerogels

Trikalitis, Pantelis N.

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Postal address P.O. Box 118, SE-221 00 LUND Visiting address John Ericssons vg 3 Telephone switchboard +46 46-222 00 00 E-mail outgoing@kansli.lth.se Internet http://www.lth.se  

E-Print Network [OSTI]

switchboard +46 46-222 00 00 E-mail outgoing@kansli.lth.se Internet http://www.lth.se International Office Telephone switchboard +46 46-222 00 00 E-mail outgoing@kansli.lth.se Internet http://www.lth.se ARGENTINA Sciences (Lahti Yrkeshögskola) Oulun yliopisto Tampereen Teknillinen Korkeakoulu University of Lapland

222

Density functional theory investigation of the electronic structure and thermoelectric properties of layered MoS{sub 2}, MoSe{sub 2} and their mixed-layer compound  

SciTech Connect (OSTI)

First principles density functional theory calculations were carried out for the 2H-MoQ{sub 2} (Q=S and Se) and their hypothetical mixed-layer compound. Due to the different electronegativities of S and Se atoms on MoQ{sub 2}, the band gap size could be adjusted in mixed-layer compound MoS{sub 2}/MoSe{sub 2}. Also, the indirect band gap in pure MoQ{sub 2} compounds is changed to the pseudo direct band gap in mixed-layer MoS{sub 2}/MoSe{sub 2} which is similar to the monolayer compound. The layer mixing enhances the thermoelectric properties because of the increased density of states around the Fermi level and the decreased band gap size. Therefore, we suggest that this layer mixing approach should be regarded as a useful way to modulate their electronic structures and to improve their thermoelectric properties. -- Graphical abstract: On the basis of density functional calculations we predict that the mixed-layer compounds 2H-MoS{sub 2}/2H-MoSe{sub 2}, in which two different layers 2H-MoS{sub 2} and 2H-MoSe{sub 2}, have enhanced thermoelectric properties because of the increased density of states around the Fermi level and the decreased band gap size. Highlights: • We explored a way of improving TE properties of 2H-MoQ{sub 2} on DFT methods. • The mixed-layer compounds MoS{sub 2}/MoSe{sub 2} have enhanced thermoelectric properties. • This is caused by modulated electronic structure of mixed layer compound. • Layer mixing approach should be regarded as a useful way to improve TE properties.

Lee, Changhoon; Hong, Jisook [Department of Chemistry, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Lee, Wang Ro [Faculty of Liberal Education, Chonbuk National University, Jeonju, Jeonbuk 561-756 (Korea, Republic of); Kim, Dae Yeon [Agency for Defense Development (ADD), Chinhae, Kyungnam 645-600 (Korea, Republic of); Shim, Ji Hoon, E-mail: jhshim@postech.ac.kr [Department of Chemistry, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Divisions of Advanced Nuclear Engineering, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)

2014-03-15T23:59:59.000Z

223

Evidence for TeV Emission from GRB 970417a  

E-Print Network [OSTI]

Milagrito, a detector sensitive to very high energy gamma rays, monitored the northern sky from February 1997 through May 1998. With a large field of view and a high duty cycle, this instrument was well suited to perform a search for TeV gamma-ray bursts (GRBs). We report on a search made for TeV counterparts to GRBs observed by BATSE. BATSE detected 54 GRBs within the field of view of Milagrito during this period. An excess of events coincident in time and space with one of these bursts, GRB 970417a, was observed by Milagrito. The excess has a chance probability of $2.8 \\times 10^{-5}$ of being a fluctuation of the background. The probability for observing an excess at least this large from any of the 54 bursts is $1.5 \\times 10^{-3}$. No significant correlations were detected from the other bursts.

Atkins, R; Berley, D; Chen, M L; Coyne, D G; Dingus, B L; Dorfan, D E; Ellsworth, R W; Evans, D; Falcone, A D; Fleysher, L; Fleysher, R; Gisler, G; Goodman, J A; Haines, T J; Hoffman, C M; Hugenberger, S; Kelley, L A; Leonor, I; McConnell, M; McCullough, J F; McEnery, J E; Miller, R S; Mincer, A I; Morales, M F; Némethy, P; Ryan, J M; Shen, B; Shoup, A L; Sinnis, C; Smith, A J; Sullivan, G W; Tümer, T O; Wang, K; Wascko, M O; Westerhoff, S; Williams, D A; Yang, T; Yodh, G B

2000-01-01T23:59:59.000Z

224

Point Defect Characterization in CdZnTe  

SciTech Connect (OSTI)

Measurements of the defect levels and performance testing of CdZnTe detectors were performed by means of Current Deep Level Transient Spectroscopy (I-DLTS), Transient Charge Technique (TCT), Current versus Voltage measurements (I-V), and gamma-ray spectroscopy. CdZnTe crystals were acquired from different commercial vendors and characterized for their point defects. I-DLTS studies included measurements of defect parameters such as energy levels in the band gap, carrier capture cross sections, and defect densities. The induced current due to laser-generated carriers was measured using TCT. The data were used to determine the transport properties of the detectors under study. A good correlation was found between the point defects in the detectors and their performance.

Gul,R.; Li, Z.; Bolotnikov, A.; Keeter, K.; Rodriguez, R.; James, R.

2009-03-24T23:59:59.000Z

225

Evidence for TeV Emission from GRB 970417a  

E-Print Network [OSTI]

Milagrito, a detector sensitive to very high energy gamma rays, monitored the northern sky from February 1997 through May 1998. With a large field of view and a high duty cycle, this instrument was well suited to perform a search for TeV gamma-ray bursts (GRBs). We report on a search made for TeV counterparts to GRBs observed by BATSE. BATSE detected 54 GRBs within the field of view of Milagrito during this period. An excess of events coincident in time and space with one of these bursts, GRB 970417a, was observed by Milagrito. The excess has a chance probability of $2.8 \\times 10^{-5}$ of being a fluctuation of the background. The probability for observing an excess at least this large from any of the 54 bursts is $1.5 \\times 10^{-3}$. No significant correlations were detected from the other bursts.

The Milagro Collaboration; R. Atkins; W. Benbow; D. Berley; M. L. Chen; D. G. Coyne; B. L. Dingus; D. E. Dorfan; R. W. Ellsworth; D. Evans; A. Falcone; L. Fleysher; R. Fleysher; G. Gisler; J. A. Goodman; T. J. Haines; C. M. Hoffman; S. Hugenberger; L. A. Kelley; I. Leonor; M. McConnell; J. F. McCullough; J. E. McEnery; R. S. Miller; A. I. Mincer; M. F. Morales; P. Nemethy; J. M. Ryan; B. Shen; A. Shoup; C. Sinnis; A. J. Smith; G. W. Sullivan; T. Tumer; K. Wang; M. O. Wascko; S. Westerhoff; D. A. Williams; T. Yang; G. B. Yodh

2000-01-07T23:59:59.000Z

226

High-efficiency large-area CdTe panels  

SciTech Connect (OSTI)

The objective of this three year effort has been to develop an improved materials technology and fabrication process for limited volume production of 1 ft{sup 2} and 4 ft{sup 2} CdS/CdTe photovoltaic modules. The module stability objective by the end of this three year subcontract was to develop techniques to provide ten year life exploration with no greater than 10% degradation. In order to achieve these efficiency and stability objectives, the research program has been separated into tasks including: (1) analysis and characterization of CdS/CdTe Devices; (2) performance optimization on small cells; (3) encapsulation and stability testing; and (4) module efficiency optimization. 27 refs., 18 figs., 3 tabs.

Albright, S.P.; Chamberlin, R.R.; Jordan, J.F. (Photon Energy, Inc., El Paso, TX (USA))

1990-11-01T23:59:59.000Z

227

Charge transport properties of CdMnTe radiation detectors  

SciTech Connect (OSTI)

Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature.

Kim K.; Rafiel, R.; Boardman, M.; Reinhard, I.; Sarbutt, A.; Watt, G.; Watt, C.; Uxa, S.; Prokopovich, D.A.; Belas, E.; Bolotnikov, A.E.; James, R.B.

2012-04-11T23:59:59.000Z

228

RARE B MESON DECAYS T.E. Browder \\Lambda  

E-Print Network [OSTI]

Supported by the US Department of Energy c fl 2002 by T.E. Browder #12; 1 Introduction, Motivation on the construction of the Standard Model of particle physics. Recall that in a physical picture with only three. As a result, the weak neutral current, J 0 NC , J 0 NC = u¯u + d c ¯ d c + s c ¯ s c (2) = u¯u + d ¯ d cos 2

Browder, Tom

229

Milagrito Detection of TeV Emission from Mrk 501  

E-Print Network [OSTI]

The Milagro water Cherenkov detector near Los Alamos, New Mexico, has been operated as a sky monitor at energies of a few TeV between February 1997 and April 1998. Serving as a test run for the full Milagro detector, Milagrito has taken data during the strong and long-lasting 1997 flare of Mrk 501. We present results from the analysis of Mrk 501 and compare the excess and background rates with expectations from the detector simulations.

Atkins, R; Berley, D; Chen, M L; Coyne, D G; Delay, R S; Dingus, B L; Dorfan, D E; Ellsworth, R W; Evans, D; Falcone, A D; Fleysher, L; Fleysher, R; Gisler, G; Goodman, J A; Haines, T J; Hoffman, C M; Hugenberger, S; Kelley, L A; Leonor, I; Macri, J R; McConnell, M; McCullough, J F; McEnery, J E; Miller, R S; Mincer, A I; Morales, M F; Némethy, P; Ryan, J M; Schneider, M; Shen, B; Shoup, A L; Sinnis, G; Smith, A J; Sullivan, G W; Thompson, T N; Tümer, T O; Wang, K; Wascko, M O; Westerhoff, S; Williams, D A; Yang, T; Yodh, G B

1999-01-01T23:59:59.000Z

230

Milagrito Detection of TeV Emission from Mrk 501  

E-Print Network [OSTI]

The Milagro water Cherenkov detector near Los Alamos, New Mexico, has been operated as a sky monitor at energies of a few TeV between February 1997 and April 1998. Serving as a test run for the full Milagro detector, Milagrito has taken data during the strong and long-lasting 1997 flare of Mrk 501. We present results from the analysis of Mrk 501 and compare the excess and background rates with expectations from the detector simulations.

R. Atkins; W. Benbow; D. Berley; M. -L. Chen; D. G. Coyne; R. S. Delay; B. L. Dingus; D. E. Dorfan; R. W. Ellsworth; D. Evans; A. Falcone; L. Fleysher; R. Fleysher; G. Gisler; J. A. Goodman; T. J. Haines; C. M. Hoffman; S. Hugenberger; L. A. Kelley; I. Leonor; J. Macri; M. McConnell; J. F. McCullough; J. E. McEnery; R. S. Miller; A. I. Mincer; M. F. Morales; P. Nemethy; J. M. Ryan; M. Schneider; B. Shen; A. Shoup; G. Sinnis; A. J. Smith; G. W. Sullivan; T. N. Thompson; O. T. Tumer; K. Wang; M. O. Wascko; S. Westerhoff; D. A. Williams; T. Yang; G. B. Yodh

1999-06-24T23:59:59.000Z

231

Structural Changes in Vitreous GeSe4 under Pressure  

SciTech Connect (OSTI)

High-energy X-ray diffraction experiments have been performed on GeSe{sub 4} glass up to pressures of 8.6 GPa, and the equation of state has been measured up to 10 GPa. The X-ray structure factors reveal a decrease in the first sharp diffraction peak intensity and broadening with pressure, which signifies a break-up of the intermediate range order in the glass. In contrast, the principal peak in the structure factor shows an increase in intensity and a sharpening with pressure, which is attributed to an increase in extended range order and coherence of the compacted units. The average nearest neighbor coordination number is found to remain constant in GeSe{sub 4} glass (within experimental error) over the pressure range measured. This is in contrast with the gradual increase found in GeSe{sub 2} glass. Rather, in GeSe{sub 4} glass the densification mechanism is shown to be associated with large inward shifts of the second neighbor and higher coordination shells. These features appear as additional correlations at 3.3 and 5.3 {angstrom} in the differences taken between adjacent pair distribution functions with increasing pressure.

Skinner L. B.; Parise J.; Benmore, C.J,; Antao, S.; Soignard, E.; Amin, S.A.; Bychkov, E.; Rissi, E. and Yarger, J.L.

2011-11-21T23:59:59.000Z

232

Synthesis of a Se0 /Calcite Composite Using Hydrothermal  

E-Print Network [OSTI]

Synthesis of a Se0 /Calcite Composite Using Hydrothermal Carbonation of Ca(OH)2 Coupled in a batch system by hydrothermal carbonation of calcium hydroxide under high CO2-Ar pressure (90 bar. The carbonate matrix was constituted by nano- to microrhombohedral crystals (

Montes-Hernandez, German

233

Synthesis of a Se0 /calcite composite using hydrothermal1  

E-Print Network [OSTI]

1 Synthesis of a Se0 /calcite composite using hydrothermal1 carbonation of Ca(OH)2 coupled800141p #12;2 Abstract1 2 In this study, the hydrothermal carbonation of calcium hydroxide under high CO2 "crystalline elemental selenium" (carbonate matrix was constituted

Paris-Sud XI, Université de

234

www.sida.se The Impact of the Global Economic  

E-Print Network [OSTI]

www.sida.se The Impact of the Global Economic Crisis on Women's Well-Being and Empowerment Sida, December 02, 2010 Publication series: Women's Economic Empowerment A worker at a steel recycling mill.m.B. Akash #12;#12;A Guide to Principles, Procedures and Working Methods MariaS.Floro AssociateProfessor,DepartmentofEconomics

Lansky, Joshua

235

KTH Aeronautical and Vehicle Engineering, Teknikringen 8, SE-10044 Stockholm. Phone: +46 70 6522441. E-mail: mabe@kth.se Pg: 1 56 53-9. Bg: 895-9223. VAT: SE202100305401. www.kth.se  

E-Print Network [OSTI]

KTH Aeronautical and Vehicle Engineering, Teknikringen 8, SE-10044 Stockholm. Phone: +46 70 6522441 on Energy Usage of Tracked Taxis Car-like vehicles running on elevated guideways in urban areas or airports vehicles and traditional vehicles, including both measurements and simulations. - Study the rolling

Haviland, David

236

se de doctorat en informatique Comprendre le Web cach  

E-Print Network [OSTI]

niveau à l'aide de telles descriptions. Abstract e hidden Web (also known as deep or invisible Web'informations, complexité Keywords: hidden Web, deep Web, databases, information extraction, complexity tel-00198150,versionèse de doctorat en informatique Comprendre le Web caché Understanding the Hidden Web Pierre

Paris-Sud XI, Université de

237

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

238

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

SciTech Connect (OSTI)

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

239

Directional correlation measurements for gamma transitions in /sup 127/Te  

SciTech Connect (OSTI)

The directional correlation of coincident ..gamma.. transitions in /sup 127/Te has been measured following the ..beta../sup -/ decay of /sup 127/Sb (T/sub 1/2/ = 3.9 d) using Ge(Li)-Ge(Li) and Ge(Li)-NaI(T1) gamma spectrometers. Measurements have been carried out for 14 gamma cascades resulting in the determination of multipole mixing ratios delta(E2/M1) for 15 ..gamma.. transitions. The present results permitted a definite spin assignment of (7/2) for the 785 keV level and confirmation of several previous assignments to other levels in /sup 127/Te. The g factor of the 340 keV ((9/2)/sup -/) level has also been measured using the integral perturbed angular correlation method in the hyperfine magnetic field of a Te in Ni matrix. The results of the g factor as well as the mixing ratio for the 252 keV ((9/2)/sup -/..-->..(11/2)/sup -/) transition support the earlier interpretation of this state as an anomalous coupling state.

de Souza, M.O.M.D.; Saxena, R.N.

1985-02-01T23:59:59.000Z

240

A New Limit on the Neutrinoless DBD of 130Te  

E-Print Network [OSTI]

We report the present results of CUORICINO a cryogenic experiment on neutrinoless double beta decay (DBD) of 130Te consisting of an array of 62 crystals of TeO2 with a total active mass of 40.7 kg. The array is framed inside of a dilution refrigerator, heavily shielded against environmental radioactivity and high-energy neutrons, and operated at a temperature of ~8 mK in the Gran Sasso Underground Laboratory. Temperature pulses induced by particle interacting in the crystals are recorded and measured by means of Neutron Transmutation Doped thermistors. The gain of each bolometer is stabilized with voltage pulses developed by a high stability pulse generator across heater resistors put in thermal contact with the absorber. The calibration is performed by means of two thoriated wires routinely inserted in the set-up. No evidence for a peak indicating neutrinoless DBD of 130Te is detected and a 90% C.L. lower limit of 1.8E24 years is set for the lifetime of this process. Taking largely into account the uncertainties in the theoretical values of nuclear matrix elements, this implies an upper boud on the effective mass of the electron neutrino ranging from 0.2 to 1.1 eV. This sensitivity is similar to those of the 76Ge experiments.

C. Arnaboldi; D. R. Artusa; F. T. Avignone III; M. Balata; I. Bandac; M. Barucci; J. W. Beeman; C. Brofferio; C. Bucci; S. Capelli; L. Carbone; S. Cebrian; O. Cremonesi; R. J. Creswick; A. de Waard; H. A. Farach; E. Fiorini; G. Frossati; E. Guardincerri; A. Giuliani; P. Gorla; E. E. Haller; J. McDonald; E. B. Norman; A. Nucciotti; E. Olivieri; M. Pallavicini; E. Palmieri; E. Pasca; M. Pavan; M. Pedretti; G. Pessina; S. Pirro; E. Previtali; L. Risegari; C. Rosenfeld; S. Sangiorgio; M. Sisti; A. R. Smith; L. Torres; G. Ventura

2005-01-13T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

TeV Scale Lepton Number Violation and Baryogenesis  

E-Print Network [OSTI]

Contrary to the common lore based on naive dimensional analysis, the seesaw scale for neutrino masses can be naturally in the TeV range, with small parameters coming from radiative corrections. We present one such class of type-I seesaw models, based on the left-right gauge group $SU(2)_L\\times SU(2)_R\\times U(1)_{B-L}$ realized at the TeV scale, which fits the observed neutrino oscillation parameters as well as other low energy constraints. We discuss how the small parameters of this scenario can arise naturally from one loop effects. The neutrino fits in this model use quasi-degenerate heavy Majorana neutrinos, as also required to explain the matter-antimatter asymmetry in our Universe via resonant leptogenesis mechanism. We discuss the constraints implied by the dynamics of this mechanism on the mass of the right-handed gauge boson in this class of models with enhanced neutrino Yukawa couplings compared to the canonical seesaw model and find a lower bound of $m_{W_R}\\geq 9.9$ TeV for successful leptogenesi...

Dev, P S Bhupal; Mohapatra, R N

2015-01-01T23:59:59.000Z

242

Ann bay lodyans 12 / Se Bryant Freeman ("Tonton Liben") ki pare ti liv sa a  

E-Print Network [OSTI]

le sa a, li kite fimen. Li pran bwa pip li, li voltije I laba. Koze I regie tout tan. Lamesi Montelis, Ravin Twonpet 4 NEG KABRIT AK NEG SOULYE Yon jou, te gen yon neg ki te gen yon bel kabrit. Li te soti Leste, e le I rive Gonayiv, li we yon... a, Bondye fe yon bon ti melanj: li pran bwode ki gen nan pan, di ki gen nan woch, fines ki gen nan ke zwazo, douse ki gen nan siwo myel, mechanste ki gen nan tig, chale ki gen nan dife, fredi ki gen nan lanej. Bondye kontwole yo, sa pa ase...

Freeman, Bryant C.

2000-01-01T23:59:59.000Z

243

Effect of Te Inclusions on Internal Electric Field of CdMnTe Gamma-Ray Detectors  

SciTech Connect (OSTI)

We studied two separate as-grown CdMnTe crystals by Infrared (IR) microscopy and Pockels effect imaging, and then developed an algorithm to analyze and visualize the electric field within the crystals’ bulk. In one of the two crystals the size and distribution of inclusions within the bulk promised to be more favorable in terms of efficiency as a detector crystal. However, the Te inclusions were arranged in characteristic ‘planes’. Pockels imaging revealed an accumulation of charges in the region of these planes. We demonstrated that the planes induced stress within the bulk of the crystal that accumulated charges, thereby causing non-uniformity of the internal electric field and degrading the detector’s performance.

Babalola, O.S.; Bolotnikov, A.; Egarievwe, S.; Hossain, A.; Burger, A.; James, R.

2009-08-02T23:59:59.000Z

244

First-Principles Study of Back Contact Effects on CdTe Thin Film Solar Cells  

SciTech Connect (OSTI)

Forming a chemically stable low-resistance back contact for CdTe thin-film solar cells is critically important to the cell performance. This paper reports theoretical study of the effects of the back-contact material, Sb{sub 2}Te{sub 3}, on the performance of the CdTe solar cells. First-principles calculations show that Sb impurities in p-type CdTe are donors and can diffuse with low diffusion barrier. There properties are clearly detrimental to the solar-cell performance. The Sb segregation into the grain boundaries may be required to explain the good efficiencies for the CdTe solar cells with Sb{sub 2}Te{sub 3} back contacts.

Du, Mao-Hua [ORNL

2009-01-01T23:59:59.000Z

245

Multi-TeV flaring from blazars: Markarian 421 a case study  

E-Print Network [OSTI]

The TeV blazar Markarian 421 underwent multi-TeV flaring during April 2004 and simultaneously observed in x-ray and TeV energies. It was observed that the TeV outbursts had no counterparts in the lower energies, which implies that this might be an orphan flare. In the context of hadronic model, we have shown that this multi-TeV flaring can be produced due to the interaction of Fermi-accelerated protons of energy $\\lesssim 168$ TeV with the background photons in the low energy tail of the synchrotron self-Compton spectrum of the blazar jet. We fit very well the flaring spectrum with this model. Based on this study, we speculate that Mrk 501 and PG 1553+113 are possible candidates for orphan flaring in the future.

Sahu, Sarira; Rajpoot, Subhash

2015-01-01T23:59:59.000Z

246

The Effect of Structural Vacancies on the Thermoelectric Properties of (Cu2Te)1-x(Ga2Te3)x  

SciTech Connect (OSTI)

We have studied the effects of structural vacancies on the thermoelectric properties of the ternary compounds (Cu2Te)1-x(Ga2Te3)x (x = 0.5, 0.55, 0.571, 0.6, 0.625, 0.667 and 0.75), which are solid solutions found in the pseudo-binary phase diagram for Cu2Te and Ga2Te3. This system possesses tunable structural vacancy concentrations. The x= 0.5 phase, CuGaTe2, is nominally devoid of structural vacancies, while the rest of the compounds contain varying amounts of these features, and the volume density of vacancies increases with Ga2Te3 content. The sample with x = 0.5, 0.55, 0.571, 0.6, 0.625 crystallize in the chalcopyrite structure while the x = 0.667 and 0.75 adopt the Ga2Te3 defect zinc blende structure. Strong scattering of heat carrying phonons by structural defects, leads to the reduction of thermal conductivity, which is beneficial to the thermoelectric performance of materials. On the other hand, these defects also scatter charge carriers and reduce the electrical conductivity. All the samples investigated are p-type semiconductors as inferred by the signs of their respective Hall (RH) and Seebeck (S) coefficients. The structural vacancies were found to scatter phonons strongly, while a combination of increased carrier concentration, and vacancies decreases the Hall mobility ( H), degrading the overall thermoelectric performance. The room temperature H drops from 90 cm2/V s for CuGaTe2 to 13 cm2/V s in Cu9Ga11Te21 and 4.6 cm2/V s in CuGa3Te5. The low temperature thermal conductivity decreases significantly with higher Ga2Te3 concentrations (higher vacancy concentration) due to increased point defect scattering which dominate thermal resistance terms. At high temperatures, the dependence of thermal conductivity on the Ga2Te3 content is less significant. The presence of strong Umklapp scattering leads to low thermal conductivity at high temperatures for all samples investigated. The highest ZT among the samples in this study was found for the defect-free CuGaTe2 with ZT ~ 1.0 at 840K.

Ye, Zuxin [GM Research and Development Center; Cho, Jung Y [GM R& D and Planning, Warren, Michigan; Tessema, Misle [GM Research and Development Center; Salvador, James R. [GM R& D and Planning, Warren, Michigan; Waldo, Richard [GM R& D and Planning, Warren, Michigan; Wang, Hsin [ORNL; Cai, Wei [ORNL

2013-01-01T23:59:59.000Z

247

DETERMINATION AND CHARACTERIZATION OF DEEP LEVELS IN p-CdTe(Cl)  

E-Print Network [OSTI]

photons de 122 keV (57Co) et de 5 keV pour des photons de 59 keV (241Am). Abstract. 2014 CdTe single doped CdTe single crystals grown from tellurium solvent have a good resolution for gamma-rays, when. The investigation of the energy levels system of charged centres in CdTe, as well as in other II-VI compounds

Paris-Sud XI, Université de

248

p-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells  

E-Print Network [OSTI]

p-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells Ken K. Chin n Department of Physics and Apollo CdTe Solar Energy Research Center, NJIT, Newark, NJ 07058, USA a r t i c l e May 2010 Keywords: CdTe p-Doping Hole density Non-shallow Acceptor Activation energy a b s t r a c

249

ELECTRIC PROPERTIES OF SEMI-INSULATING CRYSTALS CdTe : Cl  

E-Print Network [OSTI]

239 ELECTRIC PROPERTIES OF SEMI-INSULATING CRYSTALS CdTe : Cl E. N. ARKADYEVA and O. A. MATVEEV A Des mesures d'effet Hall et de conductivité sont effectuées sur des cristaux de CdTe, dopé au chlore and conductivity measurement are carried out on chlorine doped semi- insulating CdTe crystals, of p and n electric

Boyer, Edmond

250

High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011  

SciTech Connect (OSTI)

The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently showed state-of-the-art electron mobilities and good hole mobilities; bulk minority carrier recombination lifetimes of unintentionally p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be consistently of order 100 ns or longer; desired n- and p-doping levels were achieved; solar cell series specific resistances <10 ?-cm2 were achieved; A single-junction solar cell having a state-of-the-art value of Voc and a unverified 16.4% efficiency was fabricated from CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a tandem cell with a Si bottom junction.

Carmody, M.; Gilmore, A.

2011-05-01T23:59:59.000Z

251

Voltage Dependent Carrier Collection in CdTe Solar Cells D.L. Btzner1  

E-Print Network [OSTI]

Voltage Dependent Carrier Collection in CdTe Solar Cells D.L. Bätzner1 , Guido Agostinelli2 , A to 1000nm, i.e. the band edge region of CdTe. Region I is further divided in a `blue' part between 300 nm III is as well subdivided in region IIIa from about 800 nm to the band gap of CdTe (~850 nm

Romeo, Alessandro

252

CdTe OPTICAL WAVEGUIDE MODULATORS (*) D. L. SPEARS and A. J. STRAUSS  

E-Print Network [OSTI]

401 CdTe OPTICAL WAVEGUIDE MODULATORS (*) D. L. SPEARS and A. J. STRAUSS Lincoln Laboratory guides d'ondes opto-acoustiques et opto-électriques ont été réalisés dans des guides d'ondes n-/n+ CdTe-électriques de faible tension ont été réalisés en appliquant des électrodes en or sur des plaquettes n+ de CdTe

Paris-Sud XI, Université de

253

ELECTROABSORPTION BY IMPURITIES AND DEFECTS IN SEMI-INSULATING CdTe  

E-Print Network [OSTI]

263 ELECTROABSORPTION BY IMPURITIES AND DEFECTS IN SEMI-INSULATING CdTe G. NEU, Y. MARFAING, R des défauts dans CdTe compensé non dopé et dopé au chlore de 1,2 à 1,6 eV. Trois groupes de symétrie. Abstract. 2014 Electroabsorption experiments have been conducted on semi-insulating CdTe prepared

Paris-Sud XI, Université de

254

CdTe-Cu(OH){sub 2} nanocomposite: Aqueous synthesis and characterization  

SciTech Connect (OSTI)

CdTe-Cu(OH){sub 2} nanocomposites were synthesized in aqueous solution by a seed-mediated growth approach. The effect of refluxing time and the concentration of Cu{sup 2+} on the preparation of these samples were measured using UV-visible absorption and photoluminescence analysis. The emission peak of the synthesized nanocomposites (CdTe-Cu(OH){sub 2}) was shifted from 605 (CdTe seed) to 621 nm. The size of CdTe nanoparticles were averaged about 3.22 nm, and the CdTe-Cu(OH){sub 2} nanocomposites were averaged as 5.19 nm. The synthesized CdTe-Cu(OH){sub 2} nanocomposite were characterized with XRD, EDAX, TEM, FT-IR, EPR, and thermal analysis (TG/DTG curves). The results indicate that as-prepared nanoparticles with core/shell structure exhibit interesting optical properties. -- Graphical Abstract: Schematic of aqueous synthesis route for CdTe-Cu(OH){sub 2} nanocomposite and The Stokes shift of CdTe nanocrystals and CdTe-Cu(OH){sub 2} Nanocomposites, (CdTe: emission at 605 nm, CdTe-Cu(OH){sub 2}: emission at 621 nm). Display Omitted Highlights: {yields} CdTe-Cu(OH){sub 2} nanocomposites were synthesized by a seed-mediated growth approach. {yields} The synthetic procedure is simple, and can be easily scaled up. {yields} The effect of refluxing time on the preparation of these samples was measured. {yields} The Cu(OH){sub 2} shell thickness was controlled by the amount of Cu in the solution. {yields} TEM images demonstrated homogeneous size distribution for these nanocomposites.

Abd El-sadek, M.S., E-mail: el_sadek_99@yahoo.co [Nanomaterial Laboratory, Physics Department, Faculty of Science, South Valley University, Qena 83523 (Egypt); Crystal Growth Centre, Anna University Chennai, Chennai 600025 (India); Moorthy Babu, S. [Crystal Growth Centre, Anna University Chennai, Chennai 600025 (India)

2011-05-15T23:59:59.000Z

255

DISSERTATION Role of the Cu-O Defect in CdTe Solar Cells  

E-Print Network [OSTI]

OF THE CU-O DEFECT COMPLEX IN CDTE SOLAR CELLS Thin-film CdTe is one of the leading materials used the defects present in thin-film CdTe deposited for solar cells. One key defect seen in the thin-film CdDISSERTATION Role of the Cu-O Defect in CdTe Solar Cells Submitted by Caroline R. Corwine

Sites, James R.

256

APS/DPP 111207-se 1 University Fusion Association Meeting  

E-Print Network [OSTI]

University Funding FY 2007-2008 ($ Millions) Program Element FY 2007 FY 2008 Sept Plan Oct Plan · C.0 · HEDLP 1.8 1.9 · Intl, Diagnostics, HBCU, Other 4.3 4.8 · Total University Funding 76.8 78.1 #12;APSAPS/DPP 111207-se 1 University Fusion Association Meeting Orlando, FL November 12, 2007 Stephen

257

LG: Order (2014-SE-15011) | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensionalthe10 DOEWashington, DCKickoffLDV HVACResearchof4-SE-15011) LG:

258

Superficies y Vacio 8, 69-72(1999) Sociedad Mexicana de Ciencias de Superficies y de Vaco. Electronic properties of (CdTe)x(In2Te3)1-x thin films grown by close spaced vapor  

E-Print Network [OSTI]

(CSVT-FE); CdTe and In2Te3 were employed as sources. The temperature of evaporation of the CdTe and In2 the band gap energy from a value as low as 0.6 eV up to 1.5 eV, the band gap of CdTe. It has been reported I. INTRODUCTION The ternary compound CdIn2Te4 is of interest since all compounds formed by mixing CdTe

Meléndez Lira, Miguel Angel

259

Fabrication of ultra thin CdS/CdTe solar cells by magnetron sputtering.  

E-Print Network [OSTI]

?? CdTe is a nearly perfect absorber material for second generation polycrystalline solar cells because the bandgap closely matches the peak of the solar spectrum,… (more)

Plotnikov, Victor

2009-01-01T23:59:59.000Z

260

Construção e caracterização de célula solar tipo barreira Schottky CdTe/Al.  

E-Print Network [OSTI]

??In this work the techniques of hot wall epitaxy (HWE) and molecular beam epitaxy (MBE) on thin films of CdTe (cadmium telluride) were used in… (more)

Denis Rafael de Oliveira Pereira

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Some possible sources of IceCube TeV-PeV neutrino events  

E-Print Network [OSTI]

The IceCube Collaboration has observed 37 neutrino events in the energy range $30\\, {\\text TeV}\\lesssim E_{\

Sarira Sahu; Luis Salvador Miranda

2014-08-21T23:59:59.000Z

262

E-Print Network 3.0 - arond te dual-axis Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Michigan University Collection: Mathematics 62 BunchTiming Measurement in the Muon Cooling Experiment Summary: Bunch-Timing Measurement in the Muon Cooling Experiment Via TE...

263

Electrical properties of PbTe single crystals with excess tellurium  

SciTech Connect (OSTI)

The effects of excess (up to 0.1 at %) Te atoms and heat treatment at 473 and 573 K for 120 h on the conductivity {sigma}, thermopower {alpha}, and Hall coefficient R of PbTe single crystals are studied. It is shown that excess Te atoms and annealing strongly affect the values and character of the temperature dependences of these parameters and the signs of {alpha} and R at low temperatures, which is caused by the acceptor effect of these atoms and the formation of antisite defects due to localization of Te in vacancies of the lead sublattice upon annealing.

Bagiyeva, G. Z., E-mail: bagieva-gjulandam@rambler.ru; Mustafayev, N. B.; Abdinova, G. Dj.; Abdinov, D. Sh. [National Academy of Sciences of Azerbaijan, Abdullaev Institute of Physics (Azerbaijan)

2011-11-15T23:59:59.000Z

264

A study of a procedure for editing data  

E-Print Network [OSTI]

. 11vciltol les ciirsory erlaniination of the eight items listed iibove shows iio obvi o?s basis for a se!. of intevn il collsl. st. e?cy cciuntlofls Hei(ever i I, hc ( el'lsus Bul cau hus !o:ig recognized that ccvtain vatios of report avc... of seve& aI & epovt. vari &bi es, e. g. ?un&her of &uupI oyces on Ocl. obev 1, co& n acveage, o&?umbev of children. A &Ll&?&inta set is & e&ul ?'&to the program ?hich caus&. "s various operations to be performed on the & ?dividual report vari...

Smith, David Worth

1970-01-01T23:59:59.000Z

265

TeV Astrophysics Constraints on Planck Scale Lorentz Violation  

E-Print Network [OSTI]

We analyze observational constraints from TeV astrophysics on Lorentz violating nonlinear dispersion for photons and electrons without assuming any a priori equality between the photon and electron parameters. The constraints arise from thresholds for vacuum Cerenkov radiation, photon decay and photo-production of electron-positron pairs. We show that the parameter plane for cubic momentum terms in the dispersion relations is constrained to an order unity region in Planck units. We find that the threshold configuration can occur with an asymmetric distribution of momentum for pair creation, and with a hard photon for vacuum Cerenkov radiation.

Ted Jacobson; Stefano Liberati; David Mattingly

2002-09-24T23:59:59.000Z

266

Electromagnetic leptogenesis at the TeV scale  

E-Print Network [OSTI]

We construct an explicit model implementing electromagnetic leptogenesis. In a simple extension of the Standard Model, a discrete symmetry forbids the usual decays of the right-handed neutrinos, while allowing for an effective coupling between the left-handed and right-handed neutrinos through the electromagnetic dipole moment. This generates correct leptogenesis with resonant enhancement and also the required neutrino mass via a TeV scale seesaw mechanism. The model is consistent with low energy phenomenology and would have distinct signals in the next generation colliders, and, perhaps even the LHC.

Debajyoti Choudhury; Namit Mahajan; Sudhanwa Patra; Utpal Sarkar

2011-04-11T23:59:59.000Z

267

Substrate CdTe Efficiency Improvements - Energy Innovation Portal  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon CoolingSubstrate CdTe Efficiency

268

TeVSymposium12MasterDB (PPD-115151)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassiveSubmittedStatus TomAboutManus Site-InactiveLaboratory TeV Physics

269

Effect of shells on photoluminescence of aqueous CdTe quantum dots  

SciTech Connect (OSTI)

Graphical abstract: Size-tunable CdTe coated with several shells using an aqueous solution synthesis. CdTe/CdS/ZnS quantum dots exhibited high PL efficiency up to 80% which implies the promising applications for biomedical labeling. - Highlights: • CdTe quantum dots were fabricated using an aqueous synthesis. • CdS, ZnS, and CdS/ZnS shells were subsequently deposited on CdTe cores. • Outer ZnS shells provide an efficient confinement of electron and hole inside the QDs. • Inside CdS shells can reduce the strain on the QDs. • Aqueous CdTe/CdS/ZnS QDs exhibited high stability and photoluminescence efficiency of 80%. - Abstract: CdTe cores with various sizes were fabricated in aqueous solutions. Inorganic shells including CdS, ZnS, and CdS/ZnS were subsequently deposited on the cores through a similar aqueous procedure to investigate the effect of shells on the photoluminescence properties of the cores. In the case of CdTe/CdS/ZnS quantum dots, the outer ZnS shell provides an efficient confinement of electron and hole wavefunctions inside the quantum dots, while the middle CdS shell sandwiched between the CdTe core and ZnS shell can be introduced to obviously reduce the strain on the quantum dots because the lattice parameters of CdS is situated at the intermediate-level between those of CdTe and ZnS. In comparison with CdTe/ZnS core–shell quantum dots, the as-prepared water-soluble CdTe/CdS/ZnS quantum dots in our case can exhibit high photochemical stability and photoluminescence efficiency up to 80% in an aqueous solution, which implies the promising applications in the field of biomedical labeling.

Yuan, Zhimin; Yang, Ping, E-mail: mse_yangp@ujn.edu.cn

2013-07-15T23:59:59.000Z

270

Bi-Se doped with Cu, p-type semiconductor  

DOE Patents [OSTI]

A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

2013-08-20T23:59:59.000Z

271

Goodman Manufacturing: Order (2011-SE-4301) | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensional Subject: GuidanceNot Measurement Sensitive DOE-1-SE-4301) Goodman

272

SeQuential Biofuels LLC | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revisionEnvReviewNonInvasiveExplorationUT-g Grant ofRichardton AbbeyA Jump to:ScheringScituate WindSeQuential

273

Midea: Order (2013-SE-1505) | Department of Energy  

Energy Savers [EERE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector General Office0-72.pdfGeorgeDoesn't32 MasterAcquisiti ----Energy3-SE-1505) Midea: Order

274

Mile High: Order (2012-SE-4501) | Department of Energy  

Energy Savers [EERE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector General Office0-72.pdfGeorgeDoesn't32 MasterAcquisiti ----Energy3-SE-1505)MidwestOrder

275

Mile High: Proposed Penalty (2012-SE-4501) | Department of Energy  

Energy Savers [EERE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector General Office0-72.pdfGeorgeDoesn't32 MasterAcquisiti ----Energy3-SE-1505)MidwestOrderProposed

276

Constraints on the TeV source population and its contribution to the galactic diffuse TeV emission  

E-Print Network [OSTI]

The detection by the HESS atmospheric Cerenkov telescope of fourteen new sources from the Galactic plane makes it possible to estimate the contribution of unresolved sources like those detected by HESS to the diffuse Galactic emission measured by the Milagro Collaboration. The number-intensity relation and the luminosity function for the HESS source population are investigated. By evaluating the contribution of such a source population to the diffuse emission we conclude that a significant fraction of the TeV energy emission measured by the Milagro experiment could be due to unresolved sources like HESS sources. Predictions concerning the number of sources which Veritas, Milagro, and HAWC should detect are also given.

Casanova, Sabrina

2007-01-01T23:59:59.000Z

277

Constraints on the TeV source population and its contribution to the galactic diffuse TeV emission  

E-Print Network [OSTI]

The detection by the HESS atmospheric Cerenkov telescope of fourteen new sources from the Galactic plane makes it possible to estimate the contribution of unresolved sources like those detected by HESS to the diffuse Galactic emission measured by the Milagro Collaboration. The number-intensity relation and the luminosity function for the HESS source population are investigated. By evaluating the contribution of such a source population to the diffuse emission we conclude that a significant fraction of the TeV energy emission measured by the Milagro experiment could be due to unresolved sources like HESS sources. Predictions concerning the number of sources which Veritas, Milagro, and HAWC should detect are also given.

Sabrina Casanova; Brenda L. Dingus

2007-11-19T23:59:59.000Z

278

Superficies y Vaco 12, 16-19, Junio 2001 Sociedad Mexicana de Ciencia de Superficies y de Vaco. Near-IR bandgap engineering employing the alloy (CdTe)x(In2Te3)1-x  

E-Print Network [OSTI]

the closed space vapor transport technique combined with free evaporation. As sources we employed CdTe and In thin films 1. Introduction CdTe and its alloys are versatile optoelectronic materials, some of 1.19 eV and 1.15 eV have been reported [5, 6], suggest the use of the compounds In2Te3 and CdTe

Meléndez Lira, Miguel Angel

279

Space-charge-limited currents in an Se{sub 95}As{sub 5} chalcogenide glass-like semiconductor system containing EuF{sub 3} impurities  

SciTech Connect (OSTI)

It is established that charge carrier (hole) transport in the Al-Se{sub 95}As{sub 5} Left-Pointing-Angle-Bracket EuF{sub 3} Right-Pointing-Angle-Bracket -Te structure is effected by unipolar injection currents limited by space charges with the involvement of two capture trap groups. Shallow traps corresponding to charged intrinsic defects C{sub 1}{sup -} are related to broken selenium bonds. Deep traps corresponding to charged intrinsic defects P{sub 2}{sup -} are formed by arsenic atoms with broken coordination. It is shown that the EuF{sub 3} impurity strongly affects the concentration of the capture traps, especially those localized near the Fermi level.

Isayev, A. I.; Mekhtiyeva, S. I.; Qaribova, S. N., E-mail: sqaribova@rambler.ru [Azerbaijan National Academy of Sciences, Abdullaev Institute of Physics (Azerbaijan)

2011-12-15T23:59:59.000Z

280

Advanced CdTe Photovoltaic Technology: September 2007 - March 2009  

SciTech Connect (OSTI)

During the last eighteen months, Abound Solar (formerly AVA Solar) has enjoyed significant success under the SAI program. During this time, a fully automated manufacturing line has been developed, fabricated and commissioned in Longmont, Colorado. The facility is fully integrated, converting glass and semiconductor materials into complete modules beneath its roof. At capacity, a glass panel will enter the factory every 10 seconds and emerge as a completed module two hours later. This facility is currently undergoing trials in preparation for large volume production of 120 x 60 cm thin film CdTe modules. Preceding the development of the large volume manufacturing capability, Abound Solar demonstrated long duration processing with excellent materials utilization for the manufacture of high efficiency 42 cm square modules. Abound Solar prototype modules have been measured with over 9% aperture area efficiency by NREL. Abound Solar demonstrated the ability to produce modules at industry leading low costs to NREL representatives. Costing models show manufacturing costs below $1/Watt and capital equipment costs below $1.50 per watt of annual manufacturing capacity. Under this SAI program, Abound Solar supported a significant research and development program at Colorado State University. The CSU team continues to make progress on device and materials analysis. Modeling for increased device performance and the effects of processing conditions on properties of CdTe PV were investigated.

Barth, K.

2011-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Development of Nanostructures in Thermoelectric Pb-Te-Sb Alloys , L. A. Collins2  

E-Print Network [OSTI]

in the figure of merit of thermoelectric materials. Fabrication of nanostructured thermoelectric materials via the discovery of materials with a high thermoelectric figure of merit, zT, defined as S2 T/, where immiscible thermoelectric materials: PbTe-Sb2Te3. This ternary system was selected for investigation because

282

Performance predictions for monolithic, thin-film CdTe/Ge tandem solar cells  

E-Print Network [OSTI]

Performance predictions for monolithic, thin-film CdTe/Ge tandem solar cells D.L. Pulfrey*, J. Dell): pulfrey@ece.ubc.ca ABSTRACT Cadmium telluride thin-film solar cells are now commercially available be attainable. 1. INTRODUCTION Thin film solar cells based on polycrystalline CdTe have been investigated

Pulfrey, David L.

283

Interconnected Slums: Water, Sanitation and Health in Abidjan, Co^te d'Ivoire  

E-Print Network [OSTI]

Interconnected Slums: Water, Sanitation and Health in Abidjan, Co^te d'Ivoire BRIGIT OBRIST, GUE contributed to this paper are: Gue´ladio Cisse´ (Centre Suisse de Recherches Scientifiques, Abidjan, Co^te d'Ivoire´tude de cas comparative, il examine les re´ponses aux proble`mes environnementaux dans un contexte aussi

Richner, Heinz

284

A Search for TeV Emission from Active Galaxies using the Milagro Observatory  

E-Print Network [OSTI]

that observes very high energy gamma rays (100 GeV to 100 TeV) using the water-Cerenkov technique Mexico, Milagro observes most of the Northern Hemisphere over the course of a day. The high duty cycleV candidates. Active galaxies have been observed to be highly variable at TeV energies. To test for episodic

California at Santa Cruz, University of

285

Search for Short Duration Bursts of TeV Gamma Rays with the Milagrito Telescope  

E-Print Network [OSTI]

OG 2.3.07 Search for Short Duration Bursts of TeV Gamma Rays with the Milagrito Telescope Gus for short duration bursts of TeV photons. Such bursts may result from "traditional" gamma-ray bursts to gamma-ray bursts, the final stages of black hole evaporation) the most compelling reason may

California at Santa Cruz, University of

286

Unusual Otto excitation dynamics and enhanced coupling of light to TE plasmons in graphene  

E-Print Network [OSTI]

Unusual Otto excitation dynamics and enhanced coupling of light to TE plasmons in graphene Daniel R are a unique and unusual aspect of graphene's plasmonic response that are predicted to manifest when the sign plasmons in graphene. We show that TE plasmons supported by graphene in an Otto configuration unusually

Park, Namkyoo

287

Research Overview Seminar Extreme astrophysics: mapping the TeV gamma ray sky  

E-Print Network [OSTI]

and a R&D Array is currently under construction + some neutrino and dark matter experiment R&D · Recent duty cycle, TeV -ray detector · Possibly essential input to the indirect detection of dark matter experiment · Which experiments: High Altitude Water Cherenkov (HAWC) TeV -ray experiment in Mexico (with

288

$?$ and $?$ Production in Proton-Proton Collisions at E=13 TeV  

E-Print Network [OSTI]

This article is an extension of our recent studies of $\\Psi$ and $\\Upsilon$ production cross sections in proton-proton collisions at the LHC with E=$\\sqrt{s}$=8.0 TeV to E=13 TeV

Leonard S. Kisslinger; Debasish Das

2015-02-02T23:59:59.000Z

289

Bandgap engineering of CdxZn1xTe nanowires Keivan Davami,a  

E-Print Network [OSTI]

junction. These structures have been used in solar cells2,3 and eld effect transistors.4 Alloy nanowires device fabrication. Alloy nano- wires in various systems have been used to construct solar cells into a furnace. In a set of trial experiments, ZnTe (99.99% Aldrich) and CdTe (99.99% Aldrich) source powders

Cuniberti, Gianaurelio

290

Coplanar grid CdZnTe detectors for space science applications Benjamin W. Sturm*a  

E-Print Network [OSTI]

Coplanar grid CdZnTe detectors for space science applications Benjamin W. Sturm*a , Zhong Hea of the latest coplanar grid CdZnTe detectors, which use the third- generation coplanar grid design into the material properties as well as the charge induction uniformity of the detector. Keywords: coplanar grid, Cd

He, Zhong

291

Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition  

SciTech Connect (OSTI)

CdTe thin film has been grown by metalorganic chemical vapor deposition (MOCVD) on Ni(100) substrate. Using x-ray pole figure measurements we observed the epitaxial relationship of {111}CdTe// {001}Ni with [110]CdTe//[010]Ni and [112] CdTe//[100]Ni. The 12 diffraction peaks in the (111) pole figure of CdTe film and their relative positions with respect to the four peak positions in the (111) pole figure of Ni substrate are consistent with four equivalent orientational domains of CdTe with three to four superlattice match of about 0.7% in the [110] direction of CdTe and the [010] direction of Ni. The electron backscattered diffraction (EBSD) images show that the CdTe domains are 30 degrees orientated from each other.

GIARE, C [Rensselaer Polytechnic Institute (RPI); RAO, S [Rensselaer Polytechnic Institute (RPI); RILEY, M [Rensselaer Polytechnic Institute (RPI); CHEN, L [Rensselaer Polytechnic Institute (RPI); Goyal, Amit [ORNL; BHAT, I [Rensselaer Polytechnic Institute (RPI); LU, T [Rensselaer Polytechnic Institute (RPI); WANG, G [Rensselaer Polytechnic Institute (RPI)

2012-01-01T23:59:59.000Z

292

ZnO/Sn:In2O3 and ZnO/CdTe band offsets for extremely thin absorber...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ZnOSn:In2O3 and ZnOCdTe band offsets for extremely thin absorber photovoltaics . ZnOSn:In2O3 and ZnOCdTe band offsets for extremely thin absorber photovoltaics . Abstract: Band...

293

Fabrication and Physics of CdTe Devices by Sputtering: Final Report, 1 March 2005 - 30 November 2008  

SciTech Connect (OSTI)

Work to understand CdS/CdTe solar cell device physics; increase magnetron sputtering rate (while keeping high device quality); reduce thickness of CdTe layers (while keeping voltage and fill factor).

Compaan, A.; Collins, R.; Karpov, V.; Giolando, D.

2009-04-01T23:59:59.000Z

294

Post-Synthesis Crystallinity Tailoring of Water-Soluble Polymer Encapsulated CdTe Nanoparticles using Rapid Thermal Annealing  

E-Print Network [OSTI]

Post-Synthesis Crystallinity Tailoring of Water-Soluble Polymer Encapsulated CdTe Nanoparticles CdTe NPs have been demonstrated suitable for use in applications involving efficient solar cells

295

Optimal width of barrier region in X/{gamma}-ray Schottky diode detectors based on CdTe and CdZnTe  

SciTech Connect (OSTI)

The spectral distribution of quantum detection efficiency of X- and {gamma}-ray Schottky diodes based on semi-insulating CdTe or Cd{sub 0.9}Zn{sub 0.1}Te crystals is substantiated and obtained in analytical form. It is shown that the width of the space charge region (SCR) of 6-40 {mu}m at zero bias in CdTe (Cd{sub 0.9}Zn{sub 0.1}Te) Schottky diode is optimal for detecting radiation in the photon energy range above 5-10 keV. Based on the Poisson equation, the relationship between the SCR width and the composition of impurities and the degree of their compensation are investigated. It is shown that the presence of deep levels in the bandgap leads to a considerable increase in space charge density and electric field strength near the crystal surface. However, this effect contributes a small error in the determination of the SCR width using the standard formula for the Schottky diode. It is also shown that the concentration of uncompensated impurities in CdTe and Cd{sub 0.9}Zn{sub 0.1}Te crystals within the 4 Multiplication-Sign 10{sup 11}-10{sup 13} cm{sup -3} range is optimal for the detection efficiency of X- and {gamma}-rays in the photon high-energy range. The record-high values of energy resolution have been obtained in the spectra of {sup 241}Am, {sup 57}Co, {sup 133}Ba and {sup 137}Cs isotopes measured using CdTe crystals with Schottky diodes because the concentration of uncompensated donors in the CdTe crystals (1-2) Multiplication-Sign 10{sup 12} cm{sup -3} falls on an interval of maximum detection efficiency. In the spectrum of {sup 57}Co isotope, the limiting energy resolution has been achieved.

Kosyachenko, L. A.; Melnychuk, S. V.; Sklyarchuk, V. M.; Maslyanchuk, O. L.; Sklyarchuk, O. V. [Chernivtsi National University, 58012 Chernivtsi (Ukraine); Aoki, T. [Research Institute of Electronics, Shizuoka University, Johoku, Hamamatsu 432-8011 (Japan); Lambropoulos, C. P. [Technological Educational Institute of Chalkida, Psahna, Evia GR 34400 (Greece); Gnatyuk, V. A. [Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028 Kyiv (Ukraine); Grushko, E. V. [Chernivtsi National University, 58012 Chernivtsi (Ukraine); Research Institute of Electronics, Shizuoka University, Johoku, Hamamatsu 432-8011 (Japan)

2013-02-07T23:59:59.000Z

296

Structure, nonlinear properties, and photosensitivity of (GeSe2)100-x(Sb2Se3)x glasses  

E-Print Network [OSTI]

-Anne, J. Charrier, J.-P. Guin, and A. Moréac, "Sputtering and pulsed laser deposition for near- and mid-infrared to increase the n2 from 2 to 710-18 m2 /W for As2S3 glass to 11-3010-18 m2 /W for As2Se3 glass at near-infrared measurements were performed with 10 mg powdered samples, heated up to 450°C at heating rate of 10 °C.min-1

297

Cd-rich and Te-rich low-temperature photoluminescence in cadmium telluride  

SciTech Connect (OSTI)

Low-temperature photoluminescence emission spectra were measured in cadmium telluride (CdTe) samples in which composition was varied to promote either Cd or Te-rich stoichiometry. The ability to monitor stoichiometry is important, since it has been shown to impact carrier recombination. Te-rich samples show transitions corresponding to acceptor-bound excitons (?1.58?eV) and free-electron to acceptor transitions (?1.547?eV). In addition to acceptor-bound excitons, Cd-rich samples show transitions assigned to donor-bound excitons (1.591?eV) and Te vacancies at 1.552?eV. Photoluminescence is a noninvasive way to monitor stoichiometric shifts induced by post-deposition anneals in polycrystalline CdTe thin films deposited by close-spaced sublimation.

Albin, D. S., E-mail: david.albin@nrel.gov; Kuciauskas, D.; Ma, J.; Metzger, W. K.; Burst, J. M.; Moutinho, H. R.; Dippo, P. C. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2014-03-03T23:59:59.000Z

298

TenTen: A New Array of Multi-TeV Imaging Cherenkov Telescopes  

E-Print Network [OSTI]

The exciting results from H.E.S.S. point to a new population of gamma-ray sources at energies E > 10 TeV, paving the way for future studies and new discoveries in the multi-TeV energy range. Connected with these energies is the search for sources of PeV cosmic-rays (CRs) and the study of multi-TeV gamma-ray production in a growing number of astrophysical environments. TenTen is a proposed stereoscopic array (with a suggested site in Australia) of modest-sized (10 to 30m^2) Cherenkov imaging telescopes with a wide field of view (8 to 10deg diameter) optimised for the E~10 to 100 TeV range. TenTen will achieve an effective area of ~10 km^2 at energies above 10 TeV. We outline here the motivation for TenTen and summarise key performance parameters.

Rowell, G; Clay, R; Dawson, B; Denman, J; Protheroe, R; Smith, A G K; Thornton, G; Wild, N

2007-01-01T23:59:59.000Z

299

TenTen: A New Array of Multi-TeV Imaging Cherenkov Telescopes  

E-Print Network [OSTI]

The exciting results from H.E.S.S. point to a new population of gamma-ray sources at energies E > 10 TeV, paving the way for future studies and new discoveries in the multi-TeV energy range. Connected with these energies is the search for sources of PeV cosmic-rays (CRs) and the study of multi-TeV gamma-ray production in a growing number of astrophysical environments. TenTen is a proposed stereoscopic array (with a suggested site in Australia) of modest-sized (10 to 30m^2) Cherenkov imaging telescopes with a wide field of view (8 to 10deg diameter) optimised for the E~10 to 100 TeV range. TenTen will achieve an effective area of ~10 km^2 at energies above 10 TeV. We outline here the motivation for TenTen and summarise key performance parameters.

G. Rowell; V. Stamatescu; R. Clay; B. Dawson; J. Denman; R. Protheroe; A. G. K. Smith; G. Thornton; N. Wild

2007-10-10T23:59:59.000Z

300

Phase formation and phase transformations in Bi-Te films with nanoscale thickness  

SciTech Connect (OSTI)

The processes of phase formation are studied in a binary Bi-Te system using the kinematic electron diffraction technique. It is established that, in the case of both simultaneous and layer-by-layer deposition of bismuth and tellurium and irrespective of the order of their deposition, phases with compositions Bi{sub 2}Te{sub 3} and BiTe are formed at the condensation plane in the amorphous and crystalline state, respectively. The amorphous Bi{sub 2}Te{sub 3} phase is stable at room temperature and crystallizes at a temperature of 423 K. It is shown that ordering of the phase BiTe is not a consequence of atomic order of the structure; rather, it is caused by the real structure of the object (by blocks)

Akhmedov, K. M. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)], E-mail: axmedovqurban@rambler.ru

2008-09-15T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Growth of CdTe thin films on graphene by close-spaced sublimation method  

SciTech Connect (OSTI)

CdTe thin films grown on bi-layer graphene were demonstrated by using the close-spaced sublimation method, where CdTe was selectively grown on the graphene. The density of the CdTe domains was increased with increasing the number of the defective sites in the graphene, which was controlled by the duration of UV exposure. The CdTe growth rate on the bi-layer graphene electrodes was 400?nm/min with a bandgap energy of 1.45–1.49?eV. Scanning electron microscopy, micro-Raman spectroscopy, micro-photoluminescence, and X-ray diffraction technique were used to confirm the high quality of the CdTe thin films grown on the graphene electrodes.

Jung, Younghun; Yang, Gwangseok; Kim, Jihyun, E-mail: hyunhyun7@korea.ac.kr [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of)] [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Chun, Seungju; Kim, Donghwan [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)] [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

2013-12-02T23:59:59.000Z

302

Band gap of CdTe and Cd{sub 0.9}Zn{sub 0.1}Te crystals  

SciTech Connect (OSTI)

The band gap E{sub g} of the CdTe and Cd{sub 0.9}Zn{sub 0.1}Te crystals and its temperature dependence are determined by optical methods. This is motivated by considerable contradictoriness of the published data, which hampers the interpretation and calculation of characteristics of detectors of X-ray and {gamma} radiation based on these materials (E{sub g} = 1.39-1.54 and 1.51-1.6 eV for CdTe and Cd{sub 0.9}Zn{sub 0.1}Te, respectively). The used procedure of determination of E{sub g} is analyzed from the viewpoint of the influence of the factors leading to inaccuracies in determination of its value. The measurements are performed for well-purified high-quality samples. The acquired data for CdTe (E{sub g} = 1.47-1.48 eV) and Cd{sub 0.9}Zn{sub 0.1}Te (E{sub g} = 1.52-1.53 eV) at room temperature substantially narrow the range of accurate determination of E{sub g}.

Kosyachenko, L. A., E-mail: lakos@chv.ukrpact.net; Sklyarchuk, V. M.; Sklyarchuk, O. V.; Maslyanchuk, O. L. [Chernovtsy National University (Ukraine)

2011-10-15T23:59:59.000Z

303

Investigation of Junction Properties of CdS/CdTe Solar Cells and their Correlation to Device Properties (Presentation)  

SciTech Connect (OSTI)

The objective of the Junction Studies are: (1) understand the nature of the junction in the CdTe/CdS device; (2) correlate the device fabrication parameters to the junction formation; and (3) develop a self consistent device model to explain the device properties. Detailed analysis of CdS/CdTe and SnO{sub 2}/CdTe devices prepared using CSS CdTe is discussed.

Dhere, R. G.; Zhang, Y.; Romero, M. J.; Asher, S. E.; Young, M.; To, B.; Noufi, R.; Gessert, T. A.

2008-05-01T23:59:59.000Z

304

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa  

E-Print Network [OSTI]

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa , Alessio in the fabrication of high efficiency CdTe/CdS thin film solar cells. Usually, it is done first by etching the Cd: Back Contact, CdTe, Thin Film 1 INTRODUCTION The back contact in the CdTe/CdS thin film solar cell

Romeo, Alessandro

305

CdTe Feedstock Development and Validation: Cooperative Research and Development Final Report, CRADA Number CRD-08-00280  

SciTech Connect (OSTI)

The goal of this work was to evaluate different CdTe feedstock formulations (feedstock provided by Redlen) to determine if they would significantly improve CdTe performance with ancillary benefits associated with whether changes in feedstock would affect CdTe cell processing and possibly reliability of cells. Feedstock also included attempts to intentionally dope the CdTe with pre-selected elements.

Albin, D.

2011-05-01T23:59:59.000Z

306

ENG EC/ME/SE 543 Sustainable Power Systems Page 1/4 ENG EC/ME/SE 543 Sustainable Power Systems: Planning, Operation, and Markets  

E-Print Network [OSTI]

ENG EC/ME/SE 543 Sustainable Power Systems Page 1/4 Syllabus ENG EC/ME/SE 543 Sustainable Power of electrifying the transportation industry, will render electricity the dominant energy form in a sustainable costs. #12;ENG EC/ME/SE 543 Sustainable Power Systems Page 2/4 The handling of technical and economic

307

Geometric Tracking Control of a Quadrotor UAV on SE(3)  

E-Print Network [OSTI]

This paper provides new results for the tracking control of a quadrotor unmanned aerial vehicle (UAV). The UAV has four input degrees of freedom, namely the magnitudes of the four rotor thrusts, that are used to control the six translational and rotational degrees of freedom, and to achieve asymptotic tracking of four outputs, namely, three position variables for the vehicle center of mass and the direction of one vehicle body-fixed axis. A globally defined model of the quadrotor UAV rigid body dynamics is introduced as a basis for the analysis. A nonlinear tracking controller is developed on the special Euclidean group SE(3) and it is shown to have desirable closed loop properties that are almost global. Several numerical examples, including an example in which the quadrotor recovers from being initially upside down, illustrate the versatility of the controller.

Lee, Taeyoung; McClamroch, N Harris

2010-01-01T23:59:59.000Z

308

Fluorescence quenching of CdSe quantum dots on graphene  

SciTech Connect (OSTI)

We studied systematically the fluorescence quenching of CdSe quantum dots (QDs) on graphene and its multilayers, as well as graphene oxide (GO) and reduced graphene oxide (rGO). Raman intensity of QDs was used as a quantitatively measurement of its concentration in order to achieve a reliable quenching factor (QF). It was found that the QF of graphene (?13.1) and its multilayers is much larger than rGO (?4.4), while GO (?1.5) has the lowest quenching efficiency, which suggests that the graphitic structure is an important factor for quenching the fluorescence of QDs. It was also revealed that the QF of graphene is not strongly dependent on its thicknesses.

Guo, Xi Tao; Hua Ni, Zhen, E-mail: zhni@seu.edu.cn; Yan Nan, Hai; Hui Wang, Wen [Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189 (China)] [Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189 (China); Yan Liao, Chun [Physics Department, National Photoelectric Technology and Functional Materials and Application of Science and Technology International Cooperation Base, Northwest University, Xi'an 710069 (China)] [Physics Department, National Photoelectric Technology and Functional Materials and Application of Science and Technology International Cooperation Base, Northwest University, Xi'an 710069 (China); Zhang, Yan; Wei Zhao, Wei [Jiangsu Key Laboratory for Design and Fabrication of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211189 (China)] [Jiangsu Key Laboratory for Design and Fabrication of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211189 (China)

2013-11-11T23:59:59.000Z

309

PHONONS-DEFECTS INTERACTIONS IN CdTe J. L. TISSOT, P. L. VUILLERMOZ and A. LAUGIER  

E-Print Network [OSTI]

267 PHONONS-DEFECTS INTERACTIONS IN CdTe J. L. TISSOT, P. L. VUILLERMOZ and A. LAUGIER Laboratoire Einstein, 69621 Villeurbanne Cedex, France Résumé. 2014 Les défauts électriquement inactifs dans CdTe ont of electrically inactive defects has been performed on CdTe single crystals by two different experimental

Boyer, Edmond

310

Interference effects in photoreflectance and contactless electroreflectance spectra of CdTe films grown on Si substrate  

E-Print Network [OSTI]

Interference effects in photoreflectance and contactless electroreflectance spectra of CdTe films and contactless electroreflectance CER spectra of CdTe films grown on Si substrate, at energies below the band gap of CdTe. The simultaneous observation of OF in the reflectance (R) spectrum having the same period

Ghosh, Sandip

311

PHYSICAL REVIEW B 84, 205305 (2011) Spin-phonon coupling in single Mn-doped CdTe quantum dot  

E-Print Network [OSTI]

PHYSICAL REVIEW B 84, 205305 (2011) Spin-phonon coupling in single Mn-doped CdTe quantum dot C. L dynamics of a single Mn atom in a laser driven CdTe quantum dot is addressed theoretically. Recent of single Mn-doped CdTe dots, information about the quantum spin state of a single Mn atom is extracted from

Paris-Sud XI, Université de

312

Effect of Shunts on Thin-Film CdTe Module Performance. Galymzhan T. Koishiyev, James R. Sites  

E-Print Network [OSTI]

Effect of Shunts on Thin-Film CdTe Module Performance. Galymzhan T. Koishiyev, James R. Sites circuit model is used to analyze the impact of shunts on basic performance parameters of a CdTe thin with each other in their effect on the module. To address these questions, a 2-D circuit model of a CdTe

Sites, James R.

313

CdTe EPITAXIAL FILMS AND THEIR PROPERTIES S. N. MAXIMOVSKY, I. P. REVOCATOVA, V. M. SALMAN,  

E-Print Network [OSTI]

161 CdTe EPITAXIAL FILMS AND THEIR PROPERTIES S. N. MAXIMOVSKY, I. P. REVOCATOVA, V. M. SALMAN, M CdTe films of p and n type conductivity with a given devia- tion of film composition from PHYSIQUE APPLIQUÃ?E TOME 12, FÃ?VRIER 1977, PAGE 161 The design of reliable CdTe nuclear radiation counters

Paris-Sud XI, Université de

314

A SMALL PORTABLE DETECTOR HEAD USING MIS-CONTACTED CdTe FOR X-RAY SPECTROMETRY  

E-Print Network [OSTI]

339 A SMALL PORTABLE DETECTOR HEAD USING MIS-CONTACTED CdTe FOR X-RAY SPECTROMETRY P. EICHINGER for semiconductor radiation detectors is discussed. A versatile head consisting of a 2 mm thick, 10 mm diameter CdTe and its applica- tion to CdTe and CdS has already been published [2, 3], but because of the many

Paris-Sud XI, Université de

315

Substrate effect on CdTe layers grown by metalorganic vapor phase N. V. Sochinskiia),b)  

E-Print Network [OSTI]

Substrate effect on CdTe layers grown by metalorganic vapor phase epitaxy N. V. Sochinskiia for publication 30 December 1996 CdTe layers were grown by metalorganic vapor phase epitaxy MOVPE on different substrates like sapphire, GaAs, and CdTe wafers. The growth was carried out at the temperature 340 °C

Viña, Luis

316

Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-film CdTe Caroline R. Corwine,1  

E-Print Network [OSTI]

Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-film CdTe Caroline R. Corwine Laboratory, Golden, CO 80401 ABSTRACT Polycrystalline thin-film CdTe is one of the leading materials used various process steps alter defect states in the CdTe layer. Low-temperature photoluminescence (PL

Sites, James R.

317

CARRIER TRANSPORT AND TRAPPING PROCESS IN HIGH-RESISTIVITY CdTe GROWN BY A MODIFIED THM  

E-Print Network [OSTI]

189 CARRIER TRANSPORT AND TRAPPING PROCESS IN HIGH-RESISTIVITY CdTe GROWN BY A MODIFIED THM T, PAGE 189 1. Introduction. - Recent results of studies on carrier transport in high-purity CdTe crystals current measure- ments. This paper discusses trapping and detrapping effects in high-resistivity CdTe

Paris-Sud XI, Université de

318

Micron-Resolution Photocurrent of CdTe Solar Cells Using Multiple Wavelengths Jason F. Hiltner1  

E-Print Network [OSTI]

Micron-Resolution Photocurrent of CdTe Solar Cells Using Multiple Wavelengths Jason F. Hiltner1 variations in the quantum efficiency near the CdTe band gap, which track intermixing of Cd wavelengths with energies near and slightly below the CdTe band gap (1.5 eV) to be used. Temperature tuning

Sites, James R.

319

Paul Sellin, Centre for Nuclear and Radiation Physics Charge transport and mobility mapping in CdTe  

E-Print Network [OSTI]

Paul Sellin, Centre for Nuclear and Radiation Physics Charge transport and mobility mapping in CdTe, JAP 92 (2002) 3198-3206 Introduction Motivation for this Work: r THM-grown CdTe supplied by Eurorad signal response? r Pulse shape analysis can identify regions of trapping or reduced mobility r Does CdTe

Sellin, Paul

320

Photoluminescence study of the substitution of Cd by Zn during the growth by atomic layer epitaxy of alternate CdSe and ZnSe monolayers  

SciTech Connect (OSTI)

We present a study of the substitution of Cd atoms by Zn atoms during the growth of alternate ZnSe and CdSe compound monolayers (ML) by atomic layer epitaxy (ALE) as a function of substrate temperature. Samples contained two quantum wells (QWs), each one made of alternate CdSe and ZnSe monolayers with total thickness of 12 ML but different growth parameters. The QWs were studied by low temperature photoluminescence (PL) spectroscopy. We show that the Cd content of underlying CdSe layers is affected by the exposure of the quantum well film to the Zn flux during the growth of ZnSe monolayers. The amount of Cd of the quantum well film decreases with higher exposures to the Zn flux. A brief discussion about the difficulties to grow the Zn{sub 0.5}Cd{sub 0.5}Se ordered alloy (CuAu-I type) by ALE is presented.

Hernández-Calderón, I. [Physics Department,Cinvestav, Ave. IPN2508, 07360, México City, DF. (Mexico); Salcedo-Reyes, J. C. [Thin Films Group, Physics Department, Pontificia Universidad Javeriana, Cr. 7 No. 43-82, Ed. 53, Lab. 404, Bogotá, D.C. (Colombia)

2014-05-15T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy  

SciTech Connect (OSTI)

The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin films, sapphire substrates are preferred because they enable the optical path alignment to be simplified. ZnTe/sapphire heterostructures were focused upon, and ZnTe epilayers were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. Epitaxial relationships between the ZnTe thin films and the sapphire substrates with their various orientations were investigated using an X-ray diffraction pole figure method. (0001) c-plane, (1-102) r-plane, (1-100) m-plane, and (11-20) a-plane oriented sapphire substrates were used in this study. The epitaxial relationship between ZnTe and c-plane sapphire was found to be (111) ZnTe//(0001) sapphire with an in-plane orientation relationship of [?211] ZnTe//[1-100] sapphire. It was found that the (211)-plane ZnTe layer was grown on the m-plane of the sapphire substrates, and the (100)-plane ZnTe layer was grown on the r-plane sapphire. When the sapphire substrates were inclined from the c-plane towards the m-axis direction, the orientation of the ZnTe thin films was then tilted from the (111)-plane to the (211)-plane. The c-plane of the sapphire substrates governs the formation of the (111) ZnTe domain and the ZnTe epilayer orientation. These crystallographic features were also related to the atom arrangements of ZnTe and sapphire.

Nakasu, T., E-mail: n-taizo.nakasu@asagi.waseda.jp; Yamashita, S.; Aiba, T.; Hattori, S.; Sun, W.; Taguri, K.; Kazami, F. [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, M. [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials and Technology, Waseda University, Tokyo 169-0051 (Japan)

2014-10-28T23:59:59.000Z

322

ATLAS SUSY search prospects at 10 TeV  

E-Print Network [OSTI]

The search for physics beyond the Standard Model (BSM) is one of the most important goals for the general purpose detector ATLAS at the Large Hadron Collider at CERN. Already with early LHC data, the ATLAS experiment should be sensitive to discover physics beyond the Standard Model. This paper summarizes the prospects of the ATLAS experiment to find experimental evidence for Supersymmetry (SUSY) and Universal Extra Dimensions (UED) in channels with jets, leptons and missing transverse energy for an integrated luminosity of L = 200pb-1 at a centre-of-mass energy sqrt s = 10 TeV. Only a selection of the results is presented focussing on the the discovery reach for inclusive searches.

Janet Dietrich

2009-10-29T23:59:59.000Z

323

Plasma graviton production in TeV-scale gravity  

E-Print Network [OSTI]

We develop the theory of interaction of classical plasma with Kaluza-Klein (KK) gravitons in the ADD model of TeV-scale gravity. Plasma is described within the kinetic approach as the system of charged particles and Maxwell field both confined on the brane. Interaction with multidimensional gravity living in the bulk with $n$ compact extra dimensions is introduced within the linearized theory. The KK gravitons emission rates are computed taking into account plasma collective effects through the two-point correlation functions of the fluctuations of the plasma energy-momentum tensor. Apart from known mechanisms (such as bremsstrahlung and gravi-Primakoff effect) we find essentially collective channels such as the coalescence of plasma waves into gravitons which may be manifest in turbulent plasmas. Our results indicate that commonly used rates of the KK gravitons production in stars and supernovae may be underestimated.

E. Yu. Melkumova

2010-12-14T23:59:59.000Z

324

LISTE ELECTORALE BELFORT Bureau Secrtariat SeT NOM PRENOM DEPARTEMENT ETABLISSEMENT  

E-Print Network [OSTI]

Serge FEMTO-ST ENERGIE UFC AHMED Fayez-Shakil SeT UTBM AIT ALI Kahina SeT UTBM AIT-CHEIK-BIHI Wafaa SeT UTBM AMRANE Sofiane FEMTO-ST ENERGIE UFC ASENSIO SAUTO Joseba FEMTO-ST ENERGIE UFC ATTIA Dhouha SeT UTBM BAERT Jérôme FEMTO-ST ENERGIE UFC BAKKALI Zouheir FEMTO-ST ENERGIE UTBM BASSO Gillian SeT UTBM

Jeanjean, Louis

325

Studies on optoelectronic properties of DC reactive magnetron sputtered CdTe thin films  

SciTech Connect (OSTI)

Cadmium telluride continues to be a leading candidate for the development of cost effective photovoltaics for terrestrial applications. In the present work two individual metallic targets of Cd and Te were used for the deposition of CdTe thin films on mica substrates from room temperature to 300 °C by DC reactive magnetron sputtering method. XRD patterns of CdTe thin films deposited on mica substrates exhibit peaks at 2? = 27.7°, 46.1° and 54.6°, which corresponds to reflection on (1 1 1), (2 2 0) and (3 1 1) planes of CdTe cubic structure. The intensities of XRD patterns increases with the increase of substrate temperature upto 150 °C and then it decreases at higher substrate temperatures. The conductivity of CdTe thin films measured from four probe method increases with the increase of substrate temperature. The activation energies (?E) are found to be decrease with the increase of substrate temperature. The optical transmittance spectra of CdTe thin films deposited on mica have a clear interference pattern in the longer wavelength region. The films have good transparency (T > 85 %) exhibiting interference pattern in the spectral region between 1200 – 2500 nm. The optical band gap of CdTe thin films are found to be in the range of 1.48 – 1.57. The refractive index, n decreases with the increase of wavelength, ?. The value of n and k increases with the increase of substrate temperature.

Kumar, B. Rajesh, E-mail: rajphyind@gmail.com [Department of Physics, Sri Venkateswara University, Tirupati - 517 502, A.P, India and Department of Physics, Sri Krishnadevaraya University, Anantapur - 515 003, A.P (India); Hymavathi, B.; Rao, T. Subba [Department of Physics, Sri Krishnadevaraya University, Anantapur - 515 003, A.P (India)

2014-01-28T23:59:59.000Z

326

Simulation of relaxation times and energy spectra of the CdTe/Hg{sub 1-x}Cd{sub x}Te/CdTe quantum well for variable valence band offset, well width, and composition x  

SciTech Connect (OSTI)

The dependences of relaxation times and energy spectrum of the CdTe/Hg{sub 1-x}Cd{sub x}Te/CdTe quantum well (QW) on its parameters were simulated in the cadmium molar fraction range 0 < x < 0.16. It was found that the x increase from 0 to 0.16 changes electron wave function localization in the QW. A criterion for determining the number of interface levels of localized electrons depending on QW parameters was obtained. The effect of a sharp (by two orders of magnitude) increase in the relaxation time of localized electrons was detected at small QW widths and x close to 0.16.

Melezhik, E. O., E-mail: emelezhik@gmail.com; Gumenjuk-Sichevska, J. V.; Sizov, F. F. [National Academy of Sciences, Lashkariev Institute of Semiconductor Physics (Ukraine)

2010-10-15T23:59:59.000Z

327

Development of Substrate Structure CdTe Photovoltaic Devices with Performance Exceeding 10%: Preprint  

SciTech Connect (OSTI)

Most work on CdTe-based solar cells has focused on devices with a superstrate structure. This focus is due to the early success of the superstrate structure in producing high-efficiency cells, problems of suitable ohmic contacts for lightly doped CdTe, and the simplicity of the structure for manufacturing. The development of the CdCl2 heat treatment boosted CdTe technology and perpetuated the use of the superstrate structure. However, despite the beneficial attributes of the superstrate structure, devices with a substrate structure are attractive both commercially and scientifically. The substrate structure eliminates the need for transparent superstrates and thus allows the use of flexible metal and possibly plastic substrates. From a scientific perspective, it allows better control in forming the junction and direct access to the junction for detailed analysis. Research on such devices has been limited. The efficiency of these devices has been limited to around 8% due to low open-circuit voltage (Voc) and fill factor. In this paper, we present our recent device development efforts at NREL on substrate-structure CdTe devices. We have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. We have worked on a variety of contact materials including Cu-doped ZnTe and CuxTe. We will present a comparative analysis of the performance of these contacts. In addition, we have studied the influence of fabrication parameters on junction properties. We will present an overview of our development work, which has led to CdTe devices with Voc values of more than 860 mV and NREL-confirmed efficiencies approaching 11%.

Dhere, R. G.; Duenow, J. N.; DeHart, C. M.; Li, J. V.; Kuciauskas, D.; Gessert, T. A.

2012-08-01T23:59:59.000Z

328

XPS and AES Studies of Cu/CdTe(111)-B  

SciTech Connect (OSTI)

Copper is frequently used as a p-type dopant to improve the performance of back contacts in CdTe thin-film solar cells. In this study, surface-analysis techniques are used to probe fundamental interactions between Cu and the CdTe(111)-B surface. The results presented here were facilitated by the newly constructed surface-analysis cluster tool in the Measurements and Characterization Division at NREL; they reveal a host of fundamental phenomena that occur in the Cu/CdTe system.

Teeter, G.; Gessert, T. A.; Asher, S. E.

2005-01-01T23:59:59.000Z

329

Effect of low energy ion irradiation on CdTe crystals: Luminescence enhancement  

SciTech Connect (OSTI)

In this work we show that low energy ion sputtering is a very efficient technique as a cleaning process for CdTe substrates. We demonstrate, by using several techniques like grazing-angle x-ray diffraction, cathodoluminescence, microluminescence, and micro-Raman spectroscopy that the luminescent properties of CdTe substrates can be very much increased when CdTe surfaces are irradiated with low energy Argon ions. We postulate that this enhancement is mainly due to the removal of surface damage induced by the cutting and polishing processes. The formation of a low density of nonluminescent aggregates after the sputtering process has also been observed.

Olvera, J.; Plaza, J. L.; Dios, S. de; Dieguez, E. [Departamento de Fisica de Materiales, Laboratorio de Crecimiento de Cristales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Martinez, O.; Avella, M. [Departamento Fisica Materia Condensada, GdS-Optronlab Group, Universidad de Valladolid, Edificio I-D, Paseo de Belen 1, 47011 Valladolid (Spain)

2010-12-15T23:59:59.000Z

330

Search for a TeV Component of GRBs using the Milagrito Detector  

E-Print Network [OSTI]

Observing gamma ray bursts (GRBs) in the TeV energy range can be extremely valuable in providing insight to GRB radiation mechanisms and in constraining source distances. The Milagrito detector was an air shower array which used the water Cherenkov technique to search for TeV sources. Data from this detector was analyzed to look for a TeV component of GRBs coincident with low energy -rays detected by the BATSE instrument on the Compton Gamma Ray Observatory. A sample of 54 BATSE GRBs which were in the field of view of the Milagrito detector during its lifetime (February 1997 to May 1998) was used.

Atkins, R; Berley, D; Chen, M L; Coyne, D G; Delay, R S; Dingus, B L; Dorfan, D E; Ellsworth, R W; Evans, D; Falcone, A D; Fleysher, L; Fleysher, R; Gisler, G; Goodman, J A; Haines, T J; Hoffman, C M; Hugenberger, S; Kelley, L A; Leonor, I; Macri, J R; McConnell, M; McCullough, J F; McEnery, J E; Miller, R S; Mincer, A I; Morales, M F; Némethy, P; Ryan, J M; Schneider, M; Shen, B; Shoup, A L; Sinnis, G; Smith, A J; Sullivan, G W; Thompson, T N; Tümer, T O; Wang, K; Wascko, M O; Westerhoff, S; Williams, D A; Yang, T; Yodh, G B

1999-01-01T23:59:59.000Z

331

Chapter 1.19: Cadmium Telluride Photovoltaic Thin Film: CdTe  

SciTech Connect (OSTI)

The chapter reviews the history, development, and present processes used to fabricate thin-film, CdTe-based photovoltaic (PV) devices. It is intended for readers who are generally familiar with the operation and material aspects of PV devices but desire a deeper understanding of the process sequences used in CdTe PV technology. The discussion identifies why certain processes may have commercial production advantages and how the various process steps can interact with each other to affect device performance and reliability. The chapter concludes with a discussion of considerations of large-area CdTe PV deployment including issues related to material availability and energy-payback time.

Gessert, T. A.

2012-01-01T23:59:59.000Z

332

Superconductivity in textured Bi clusters/Bi{sub 2}Te{sub 3} films  

SciTech Connect (OSTI)

We report superconductivity at an onset critical temperature below 3.1 K in topological insulator ?200-nm-thick Bi{sub 2}Te{sub 3} thin films grown by pulsed laser deposition. Using energy-dispersive X-ray spectroscopy elemental mapping and Auger electron spectroscopy elemental depth profiling, we clearly identified bismuth (Bi) precipitation and Bi cluster signatures. Superconductivity in the Bi{sub 2}Te{sub 3} films was attributed to the proximity effect of Bi clusters precipitated on the surface of the Bi{sub 2}Te{sub 3} films.

Le, Phuoc Huu [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30049, Taiwan (China); Faculty of Basic Sciences, Can Tho University of Medicine and Pharmacy, 179 Nguyen Van Cu Street, Can Tho (Viet Nam); Tzeng, Wen-Yen; Chen, Hsueh-Ju; Luo, Chih Wei, E-mail: cwluo@mail.nctu.edu.tw [Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan (China); Lin, Jiunn-Yuan [Institute of Physics, National Chiao Tung University, Hsinchu 300, Taiwan (China); Leu, Jihperng, E-mail: jimleu@mail.nctu.edu.tw [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30049, Taiwan (China)

2014-09-01T23:59:59.000Z

333

Development of Bi-Sb-Te ternary alloy with compositionally graded structure  

SciTech Connect (OSTI)

Compositionally graded p-type Bi-Sb-Te thermoelectric material was synthesized by PIES (Pulverized and Intermixed Elements Sintering) method. The materials consisted of three segmented regions of different alloy composition, i.e., y = 0.8/0.825/0.9 in (Bi{sub 2}Te{sub 3}){sub 1{minus}y} (Sb{sub 2}Te{sub 3}){sub y} system. It was found that the electrical power output of the compositionally graded material was larger than that of the best single composition material when the temperature difference was the designed value.

Yamamoto, A.; Ohta, T.

1997-07-01T23:59:59.000Z

334

Search for Neutral Heavy Leptons in the NuTeV Experiment at Fermilab  

E-Print Network [OSTI]

Preliminary results from a search for neutral heavy leptons in the NuTeV experiment at Fermilab. The upgraded NuTeV neutrino detector for the 1996-1997 run included an instrumented decay region for the NHL search which, combined with the NuTeV calorimeter, allows detection in several decay modes (mu-mu-nu, mu-e-nu, mu-pi, e-pi, and e-e-nu). We see no evidence for neutral heavy leptons in our current search in the mass range from 0.3 GeV to 2.0 GeV decaying into final states containing a muon.

NuTeV Collaboration; R. B. Drucker

1998-11-23T23:59:59.000Z

335

Search for a TeV Component of GRBs using the Milagrito Detector  

E-Print Network [OSTI]

Observing gamma ray bursts (GRBs) in the TeV energy range can be extremely valuable in providing insight to GRB radiation mechanisms and in constraining source distances. The Milagrito detector was an air shower array which used the water Cherenkov technique to search for TeV sources. Data from this detector was analyzed to look for a TeV component of GRBs coincident with low energy -rays detected by the BATSE instrument on the Compton Gamma Ray Observatory. A sample of 54 BATSE GRBs which were in the field of view of the Milagrito detector during its lifetime (February 1997 to May 1998) was used.

R. Atkins; W. Benbow; D. Berley; M. -L. Chen; D. G. Coyne; R. S. Delay; B. L. Dingus; D. E. Dorfan; R. W. Ellsworth; D. Evans; A. Falcone; L. Fleysher; R. Fleysher; G. Gisler; J. A. Goodman; T. J. Haines; C. M. Hoffman; S. Hugenberger; L. A. Kelley; I. Leonor; J. Macri; M. McConnell; J. F. McCullough; J. E. McEnery; R. S. Miller; A. I. Mincer; M. F. Morales; P. Nemethy; J. M. Ryan; M. Schneider; B. Shen; A. Shoup; G. Sinnis; A. J. Smith; G. W. Sullivan; T. N. Thompson; O. T. Tumer; K. Wang; M. O. Wascko; S. Westerhoff; D. A. Williams; T. Yang; G. B. Yodh

1999-06-24T23:59:59.000Z

336

Multi-channel Absorption of Photons at Energies above 1 TeV  

E-Print Network [OSTI]

It is shown that the absorption of photons at energies > 1 TeV (much higher than the mass of the Higgs boson ~ 100 GeV) is a multi-channel one as opposed to the purely electron pair like absorption at lower energies. The observation on muons and gamma rays from Cygnus X-3 point source at these energies (1 TeV to 10 TeV) is quantitatively accounted for. The expected multi-channel cross-sections of photons in air as a function of energy is given both for Coulomb dissociation and nuclear absorption upto limiting energies of 10^9 GeV.

A. Subramanian

2006-07-24T23:59:59.000Z

337

Phase relationships in the pseudo-binary 2(ZnTe)-CuInTe{sub 2} system  

SciTech Connect (OSTI)

Subsolidus phase relationships in the 2(ZnTe){sub x}(CuInTe{sub 2}){sub 1-x} system were investigated by TEM experiments combined with EDX analysis. The samples were prepared by the solid-state reaction of the elements during long annealing times, followed by either quenching in ice-cold water, or by controlled cooling at different rates. Using the chemical compositions of single and coexisting phases at various temperatures, the boundaries of the two-phase region have been determined. At room temperature, the two-phase region extends from x=0.10 to 0.31. For x<0.10 only mixed crystals with tetragonal structure exist. Between x=0.31 and 1 alloys with the cubic structure are stable. The morphology of the tetragonal domains and their orientation relationship to the cubic matrix were determined by SAD, TEM and HRTEM experiments. The tetragonal phase embedded within the cubic matrix has a flat ellipsoidal shape, whose short axis coincides with the tetragonal c-axis. The three topotaxial orientation relationships between the tetragonal domains and the surrounding cubic matrix were found to be: [001]{sub tetr.}-bar [100]{sub cub.}, [001]{sub tetr.}-bar [010]{sub cub.} and [001]{sub tetr.}-bar [001]{sub cub.}. There is an indication that the nucleation starts from small regions displaying cation ordering according to the CuPt-type structure. Reaching the two-phase equilibrium, the tetragonal domains as well as the surrounding cubic phase are free of this cation ordering.

Roussak, Liudmila [University of Leipzig, Faculty of Chemistry and Mineralogy, Institute of Mineralogy, Crystallography and Materials Science, Linnestrasse 3-5 (TA), D-04103 Leipzig (Germany)]. E-mail: roussak@rz.uni-leipzig.de; Wagner, Gerald [University of Leipzig, Faculty of Chemistry and Mineralogy, Institute of Mineralogy, Crystallography and Materials Science, Linnestrasse 3-5 (TA), D-04103 Leipzig (Germany); Schorr, Susan [University of Leipzig, Faculty of Chemistry and Mineralogy, Institute of Mineralogy, Crystallography and Materials Science, Linnestrasse 3-5 (TA), D-04103 Leipzig (Germany); Bente, Klaus [University of Leipzig, Faculty of Chemistry and Mineralogy, Institute of Mineralogy, Crystallography and Materials Science, Linnestrasse 3-5 (TA), D-04103 Leipzig (Germany)

2005-11-15T23:59:59.000Z

338

Intrinsic Rashba-like splitting in asymmetric Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} heterogeneous topological insulator films  

SciTech Connect (OSTI)

We show by density functional theory calculations that asymmetric hetero-stacking of Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} films can modulate the topological surface states. Due to the structure inversion asymmetry, an intrinsic Rashba-like splitting of the conical surface bands is aroused. While such splitting in homogeneous Bi{sub 2}Te{sub 3}-class topological insulators can be realized in films with more than three quintuple layers under external electric fields, the hetero-stacking breaks the limit of thickness for preserving the topological nature into the thinnest two quintuple layers. These results indicate that the hetero-stacking can serve as an efficient strategy for spin-resolved band engineering of topological insulators.

Liu, Xiaofei; Guo, Wanlin, E-mail: wlguo@nuaa.edu.cn [State Key Laboratory of Mechanics and Control for Mechanical Structures and Key Laboratory for Intelligent Nano Materials and Devices (MOE), Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)

2014-08-25T23:59:59.000Z

339

Data Release for NuTeV nu_e Disappearance Analysis  

E-Print Network [OSTI]

Data Release for the NuTeV electron flavor disappearance study. See this document for instructions on incorporating the NuteV nu_e disappearance data into oscillation global fits.

Conrad, J.M.

2012-07-23T23:59:59.000Z

340

UNIVERSITY OF CALIFORNIA, TeV Energy Spectra of the Crab Nebula, Mrk 421 and  

E-Print Network [OSTI]

UNIVERSITY OF CALIFORNIA, IRVINE TeV Energy Spectra of the Crab Nebula, Mrk 421 and the Cygnus . . . . . . . . . . . . . . . . . . . . 2 i Cosmic Rays . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ii The Search for the Origin with Milagro . . . . . . . . . . . . . . . . . . . . . 69 IVThe Milagro Energy Reconstruction Algorithm 73 I

California at Santa Cruz, University of

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Collimation and Radiative Deceleration of Jets in TeV AGNs  

E-Print Network [OSTI]

We consider some implications of the rapid X-ray and TeV variability observed in M87 and the TeV blazars. We outline a model for jet focusing and demonstrate that modest radiative cooling can lead to recollimation of a relativistic jet in a nozzle having a very small cross-sectional radius. Such a configuration can produce rapid variability at large distances from the central engine and may explain recent observations of the HST-1 knot in M87. Possible applications of this model to TeV blazars are discussed. We also discuss a scenario for the very rapid TeV flares observed with HESS and MAGIC in some blazars, that accommodates the relatively small Doppler factors inferred from radio observations.

Amir Levinson; Omer Bromberg

2007-12-17T23:59:59.000Z

342

p-CdTe/n-CdS photovoltaic cells in the substrate configuration.  

E-Print Network [OSTI]

??In this thesis, p-CdTe/n-CdS solar cells in the substrate configuration have been studied. The focus is on device fabrication, performance optimization, and the development of… (more)

Wu, Hsiang Ning (1984 - )

2014-01-01T23:59:59.000Z

343

Development of high efficieny CdTe thin-film solar cell.  

E-Print Network [OSTI]

??CdTe films were deposited by sputtering technique and were then carried out by CdCl2 treatment. The SEM micrographs show that the grain sizes of the… (more)

Huang, Yein-rein

2011-01-01T23:59:59.000Z

344

Stability Issues in Sputtered CdS/CdTe Solar Cells.  

E-Print Network [OSTI]

?? Magnetron sputtering is a well-established thin-film deposition technique which is particularly well-suited for sub-micron layers. We use this method to deposit ultra-thin CdS/CdTe layers… (more)

Paudel, Naba Raj

2011-01-01T23:59:59.000Z

345

Molybdenum Nitride Films in the Back Contact Structure of Flexible Substrate CdTe Solar Cells.  

E-Print Network [OSTI]

??CdTe solar cells in the superstrate configuration have achieved record efficiencies of 16% but those in the substrate configuration have reached efficiencies of only 7.8%.… (more)

Guntur, Vasudha

2011-01-01T23:59:59.000Z

346

Atomic-force microscopy and photoluminescence of nanostructured CdTe  

SciTech Connect (OSTI)

Low-dimensional CdTe nanorods with a diameter of 10-30 nm and a high aspect ratio that reaches 100 are studied. The nanorods are grown by the physical vapor transport method with the use of Bi precipitates on the substrates. In addition, thin films of closely packed CdTe nanorods with the transverse dimensions {approx}(100-200) nm are grown. Atomic-force microscopy shows that the cross sections of all of the nanorods were hexagonally shaped. By photoluminescence measurements, the inference about the wurtzite structure of CdTe is supported, and the structural quality, electron-phonon coupling, and defects are analyzed. On the basis of recent ab initio calculations, the nature of defects responsible for the formation of deep levels in the CdTe layers and bulk crystals are analyzed.

Babentsov, V.; Sizov, F. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)] [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine); Franc, J. [Charles University, Institute of Physics, Faculty of Mathematics and Physics (Czech Republic)] [Charles University, Institute of Physics, Faculty of Mathematics and Physics (Czech Republic); Luchenko, A.; Svezhentsova, E., E-mail: svezhentsova@ukr.net; Tsybrii, Z. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)] [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)

2013-09-15T23:59:59.000Z

347

Development of CdTe thin film solar cells on flexible foil substrates.  

E-Print Network [OSTI]

??Cadmium telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal band gap of 1.45 eV, its high optical absorption… (more)

Hodges, Deidra Ranel

2009-01-01T23:59:59.000Z

348

CdTe/CdS Thin Film Solar Cells Fabricated on Flexible Substrates.  

E-Print Network [OSTI]

??Cadmium Telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal bandgap of 1.45 eV and its high optical absorption… (more)

Palekis, Vasilios

2011-01-01T23:59:59.000Z

349

Photoluminescence and Extended X-ray Absorption Fine Structure Studies on CdTe Material.  

E-Print Network [OSTI]

??The direct-band-gap semiconductor CdTe is an important material for fabricating high efficiency, polycrystalline thin-film solar cells in a heterojunction configuration. The outstanding physical properties of… (more)

Liu, Xiangxin

2006-01-01T23:59:59.000Z

350

Electron-reflector strategy for CdTe thin-film solar cells.  

E-Print Network [OSTI]

??The CdTe thin-film solar cell has a large absorption coefficient and high theoretical efficiency. Moreover, large-area photovoltaic panels can be economically fabricated. These features potentially… (more)

Hsiao, Kuo-Jui

2010-01-01T23:59:59.000Z

351

Approaches to fabricating high-efficiency ultra-thin CdTe solar cells.  

E-Print Network [OSTI]

??This thesis is an investigation of the fabrication, characterization and performance of high-efficiency and ultra-thin CdTe solar cells with an aim of reducing the material… (more)

Xia, Wei (1981 - )

2013-01-01T23:59:59.000Z

352

Room temperature ferromagnetism in Co defused CdTe nanocrystalline thin films  

SciTech Connect (OSTI)

Nanocrystalline Co defused CdTe thin films were prepared using electron beam evaporation technique by depositing CdTe/Co/CdTe stacked layers with different Co thickness onto glass substrate at 373 K followed by annealing at 573K for 2 hrs. Structural, morphological and magnetic properties of of all the Co defused CdTe thin films has been investigated. XRD pattern of all the films exhibited zinc blende structure with <111> preferential orientation without changing the crystal structure of the films. The grain size of the films increased from 31.5 nm to 48.1 nm with the increase of Co layer thickness from 25nm to 100nm. The morphological studies showed that uniform texture of the films and the presence of Co was confirmed by EDAX. Room temperature magnetization curves indicated an improved ferromagnetic behavior in the films with increase of the Co thickness.

Rao, N. Madhusudhana; Kaleemulla, S.; Begam, M. Rigana [Materials Physics Division, School of Advanced Sciences, VIT University, Vellore - 632 014 (India)

2014-04-24T23:59:59.000Z

353

Shunt Passivation Process for CdTe Solar Cell - New Post Deposition Technique.  

E-Print Network [OSTI]

?? A cadmium sulfide / cadmium telluride (CdS/CdTe) solar cell consists of thedevice stack: Glass substrate / SnO2:F (TCO, transparent conductive oxide) / CdS (n-type… (more)

Tessema, Misle Mesfin

2009-01-01T23:59:59.000Z

354

Effect of Cu doping on Hole Mobility in CdTe  

SciTech Connect (OSTI)

High quality CdTe thin films grown by laser deposition technique and heavily doped with Cu have recently been reported to have resistivity and hole mobility comparable to those of bulk single crystals. To explain the experimental results we have calculated the effect of Cu on the band structure and phonon spectrum of CdTe using the density functional theory (DFT) and the linearized augmented plane wave (LAPW) method. We found that the introduction of a high density of Cu can lead to a reduction in the hole-LO phonon scattering. In addition, Cu doping can remove Cd vacancies in CdTe and thereby enhance the hole mobility in CdTe.

Ma Zhixun; Mao, Samuel S. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Liu Lei; Yu, Peter Y. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Department of Physics, University of California at Berkeley, Berkeley, CA 94720 (United States)

2010-01-04T23:59:59.000Z

355

Atomistic simulation of CdTe solid-liquid coexistence equilibria...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

coexistence equilibria. Abstract: Atomistic simulations of CdTe using a Stillinger-Weber (S-W) interatomic potential were undertaken to model the solid-liquid phase equilibria...

356

Hadronic Production of TeV Gamma Ray Flares from Blazars  

E-Print Network [OSTI]

We propose that TeV $\\gamma$-ray emission from blazars is produced by collisions near the line of sight of high energy jet protons with gas targets (``clouds'') from the broad emission-line region (BLR). Intense TeV $\\gamma$-ray flares (GRFs) are produced when BLR clouds cross the line of sight close to the black hole. The model reproduces the observed properties of the recently reported very short and intense TeV GRFs from the blazar Markarian 421. Hadronic production of TeV GRF from blazars implies that it is accompanied by a simultaneous emission of high energy neutrinos, and of electrons and positrons with similar intensities, light curves and energy spectra. Cooling of these electrons and positrons by emission of synchrotron radiation and inverse Compton scattering produces delayed optical, X-ray and $\\gamma$-ray flares.

Arnon Dar; Ari Laor

1997-01-13T23:59:59.000Z

357

Z' Bosons, the NuTeV Anomaly, and the Higgs Boson Mass  

E-Print Network [OSTI]

NuTeV Anomaly, and the Higgs Boson Mass Michael S. Chanowitzpredicted value of the Higgs boson mass, from ? 60 to ? 120from an increase in the Higgs boson mass. There is a vast

Chanowitz, Michael S

2009-01-01T23:59:59.000Z

358

First results on neutrinoless double beta decay of Te-130 with the calorimetric cuoricino experiment  

E-Print Network [OSTI]

Evidence for Neutrinoless Double Beta Decay” arXiv:hep-on “Evidence for neutrinoless double beta decay”- arXiv:hep-Results on Neutrinoless Double Beta Decay of 130 Te with the

2003-01-01T23:59:59.000Z

359

Isospin dependence of EMC effect explains NuTeV anomaly  

SciTech Connect (OSTI)

A neutron or proton excess in nuclei leads to an isovector-vector mean-field which, through its coupling to the quarks in a bound nucleon, implies a shift in the quark distributions with respect to the Bjorken scaling variable. We show that this result leads to an additional correction to the NuTeV measurement of sin^2Theta_W. The sign of this correction is largely model independent and acts to reduce the NuTeV result. Explicit calculation within a covariant and confining Nambu Jona-Lasinio model predicts that this vector field correction accounts for approximately two-thirds of the NuTeV anomaly. We are therefore led to offer a new interpretation of the NuTeV measurement, namely, that it is further evidence for the medium modification of the bound nucleon wavefunction.

Cloet, Ian; Bentz, Wolfgang; Thomas, Anthony

2009-01-01T23:59:59.000Z

360

CATHODOLUMINESCENCE STUDIES OF THE 1.4 eV BANDS IN CdTe (*) C. B. NORRIS and C. E. BARNES  

E-Print Network [OSTI]

219 CATHODOLUMINESCENCE STUDIES OF THE 1.4 eV BANDS IN CdTe (*) C. B. NORRIS and C. E. BARNESV luminescence bands in nominally undoped, nominally stoichiometric CdTe and in donor-compensated, Te-rich CdTe.4 eV transitions in CdTe arose from the fact that this transition is of a more complex nature than

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Optical Stark Effect and Dressed Exciton States in a Mn-Doped CdTe Quantum Dot C. Le Gall,1  

E-Print Network [OSTI]

Optical Stark Effect and Dressed Exciton States in a Mn-Doped CdTe Quantum Dot C. Le Gall,1 A spin in a CdTe QD, like the strain- induced magnetic anisotropy or hyperfine coupling to the nuclei in this study is grown on a ZnTe substrate and contains CdTe QDs. A 6.5 monolayer thick CdTe layer is deposited

Boyer, Edmond

362

Enhanced thermoelectric performance in Cd doped CuInTe{sub 2} compounds  

SciTech Connect (OSTI)

CuIn{sub 1?x}Cd{sub x}Te{sub 2} materials (x?=?0, 0.02, 0.05, and 0.1) are prepared using melting-annealing method and the highly densified bulk samples are obtained through Spark Plasma Sintering. The X-ray diffraction data confirm that nearly pure chalcopyrite structures are obtained in all the samples. Due to the substitution of Cd at In sites, the carrier concentration is greatly increased, leading to much enhanced electrical conductivity and power factor. The single parabolic band model is used to describe the electrical transport properties of CuInTe{sub 2} and the low temperature Hall mobility is also modeled. By combing theoretical model and experiment data, the optimum carrier concentration in CuInTe{sub 2} is proposed to explain the greatly enhanced power factors in the Cd doped CuInTe{sub 2}. In addition, the thermal conductivity is reduced by extra phonon scattering due to the atomic mass and radius fluctuations between Cd and In atoms. The maximum zTs are observed in CuIn{sub 0.98}Cd{sub 0.02}Te{sub 2} and CuIn{sub 0.9}Cd{sub 0.1}Te{sub 2} samples, which are improved by over 100% at room temperature and around 20% at 600?K.

Cheng, N. [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049 (China); Liu, R. [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Bai, S. [CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Shi, X., E-mail: xshi@mail.sic.ac.cn; Chen, L. [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)

2014-04-28T23:59:59.000Z

363

DISCOVERY OF A NEW TeV GAMMA-RAY SOURCE: VER J0521+211  

SciTech Connect (OSTI)

We report the detection of a new TeV gamma-ray source, VER J0521+211, based on observations made with the VERITAS imaging atmospheric Cherenkov Telescope Array. These observations were motivated by the discovery of a cluster of >30 GeV photons in the first year of Fermi Large Area Telescope observations. VER J0521+211 is relatively bright at TeV energies, with a mean photon flux of (1.93 ± 0.13{sub stat} ± 0.78{sub sys}) × 10{sup –11} cm{sup –2} s{sup –1} above 0.2 TeV during the period of the VERITAS observations. The source is strongly variable on a daily timescale across all wavebands, from optical to TeV, with a peak flux corresponding to ?0.3 times the steady Crab Nebula flux at TeV energies. Follow-up observations in the optical and X-ray bands classify the newly discovered TeV source as a BL Lac-type blazar with uncertain redshift, although recent measurements suggest z = 0.108. VER J0521+211 exhibits all the defining properties of blazars in radio, optical, X-ray, and gamma-ray wavelengths.

Archambault, S. [Physics Department, McGill University, Montreal, QC H3A 2T8 (Canada); Arlen, T.; Aune, T. [Department of Physics and Astronomy, University of California, Los Angeles, CA 90095 (United States); Behera, B.; Federici, S. [DESY, Platanenallee 6, D-15738 Zeuthen (Germany); Beilicke, M.; Buckley, J. H.; Bugaev, V. [Department of Physics, Washington University, St. Louis, MO 63130 (United States); Benbow, W. [Fred Lawrence Whipple Observatory, Harvard-Smithsonian Center for Astrophysics, Amado, AZ 85645 (United States); Bird, R. [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Bouvier, A. [Santa Cruz Institute for Particle Physics and Department of Physics, University of California, Santa Cruz, CA 95064 (United States); Byrum, K. [Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439 (United States); Cesarini, A.; Connolly, M. P. [School of Physics, National University of Ireland Galway, University Road, Galway (Ireland); Ciupik, L. [Astronomy Department, Adler Planetarium and Astronomy Museum, Chicago, IL 60605 (United States); Cui, W.; Feng, Q.; Finley, J. P. [Department of Physics, Purdue University, West Lafayette, IN 47907 (United States); Errando, M. [Department of Physics and Astronomy, Barnard College, Columbia University, NY 10027 (United States); Falcone, A., E-mail: fortin@veritas.sao.arizona.edu, E-mail: errando@astro.columbia.edu, E-mail: jholder@physics.udel.edu, E-mail: sfegan@llr.in2p3.fr [Department of Astronomy and Astrophysics, 525 Davey Lab, Pennsylvania State University, University Park, PA 16802 (United States); Collaboration: VERITAS Collaboration; and others

2013-10-20T23:59:59.000Z

364

Oxygen Incorporation During Fabrication of Substrate CdTe Photovoltaic Devices: Preprint  

SciTech Connect (OSTI)

Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower ({approx}6%-8%) than those of high-performance superstrate devices ({approx}17%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10%.

Duenow, J. N.; Dhere, R. G.; Kuciauskas, D.; Li, J. V.; Pankow, J. W.; DeHart, C. M.; Gessert, T. A.

2012-06-01T23:59:59.000Z

365

Ion-beam treatment to prepare surfaces of p-CdTe films  

DOE Patents [OSTI]

A method of making a low-resistance electrical contact between a p-CdTe layer and outer contact layers by ion beam processing comprising: a) placing a CdS/CdTe device into a chamber and evacuating the chamber; b) orienting the p-CdTe side of the CdS/CdTe layer so that it faces apparatus capable of generating Ar atoms and ions of preferred energy and directionality; c) introducing Ar and igniting the area of apparatus capable of generating Ar atoms and ions of preferred energy and directionality in a manner so that during ion exposure, the source-to-substrate distance is maintained such that it is less than the mean-free path or diffusion length of the Ar atoms and ions at the vacuum pressure; d) allowing exposure of the p-CdTe side of the device to said ion beam for a period less than about 5 minutes; and e) imparting movement to the substrate to control the real uniformity of the ion-beam exposure on the p-CdTe side of the device.

Gessert, Timothy A. (Conifer, CO)

2001-01-01T23:59:59.000Z

366

Synthesis, mechanism, optical and electrical characterization of PbTe micro-needles  

SciTech Connect (OSTI)

Highlights: ? PbTe nanoneedles were prepared at low temperature without any surfactant or template. ? The synthetic method is very simple, economical and environment benign. ? PbTe nanoneedles exhibit low resistivity, which improves thermoelectric performance. ? PbTe nanoneedles show large blue-shift due to quantum confinement effect. - Abstract: The face-centered cubic PbTe micro-needles were synthesized by a simple aqueous chemical reaction between lead acetate and tellurium in NaOH solution in the presence of Na{sub 2}HPO{sub 4} as reducing reagent at low temperature under atmospheric pressure without any additional surfactants or templates. Micro structural analyses show that these micro-needles are in the range of 90–130 nm in diameter with length ?2 ?m. Electrical resistivity of prepared PbTe micro-needles was found to be 14–33 Ohm-cm. The optical absorption spectrum of PbTe micro-needles shows large blue-shift (?1.26 eV) with respect to those of the bulk counterpart (0.32 eV) due to quantum confinement of charge carriers, which is consistent with the blue shift of the band emission peak in the photoluminescence spectrum.

Kungumadevi, L. [PG and Research Department of Physics, Kongunadu Arts and Science College, Coimbatore 641 029, Tamilnadu (India); Sathyamoorthy, R., E-mail: rsathya1959@gmail.com [PG and Research Department of Physics, Kongunadu Arts and Science College, Coimbatore 641 029, Tamilnadu (India)

2013-05-15T23:59:59.000Z

367

TeV AND MULTI-WAVELENGTH OBSERVATIONS OF Mrk 421 IN 2006-2008  

SciTech Connect (OSTI)

We report on TeV {gamma}-ray observations of the blazar Mrk 421 (redshift of 0.031) with the VERITAS observatory and the Whipple 10 m Cherenkov telescope. The excellent sensitivity of VERITAS allowed us to sample the TeV {gamma}-ray fluxes and energy spectra with unprecedented accuracy where Mrk 421 was detected in each of the pointings. A total of 47.3 hr of VERITAS and 96 hr of Whipple 10 m data were acquired between 2006 January and 2008 June. We present the results of a study of the TeV {gamma}-ray energy spectra as a function of time and for different flux levels. On 2008 May 2 and 3, bright TeV {gamma}-ray flares were detected with fluxes reaching the level of 10 Crab. The TeV {gamma}-ray data were complemented with radio, optical, and X-ray observations, with flux variability found in all bands except for the radio wave band. The combination of the Rossi X-ray Timing Explorer and Swift X-ray data reveal spectral hardening with increasing flux levels, often correlated with an increase of the source activity in TeV {gamma}-rays. Contemporaneous spectral energy distributions were generated for 18 nights, each of which are reasonably described by a one-zone synchrotron self-Compton model.

Acciari, V. A.; Benbow, W. [Fred Lawrence Whipple Observatory, Harvard-Smithsonian Center for Astrophysics, Amado, AZ 85645 (United States); Aliu, E. [Department of Physics and Astronomy, Barnard College, Columbia University, NY 10027 (United States); Arlen, T. [Department of Physics and Astronomy, University of California, Los Angeles, CA 90095 (United States); Aune, T. [Santa Cruz Institute for Particle Physics and Department of Physics, University of California, Santa Cruz, CA 95064 (United States); Beilicke, M.; Buckley, J. H.; Bugaev, V.; Dickherber, R. [Department of Physics, Washington University, St. Louis, MO 63130 (United States); Boltuch, D. [Department of Physics and Astronomy and Bartol Research Institute, University of Delaware, Newark, DE 19716 (United States); Bradbury, S. M. [School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT (United Kingdom); Byrum, K. [Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439 (United States); Cannon, A. [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Cesarini, A. [School of Physics, National University of Ireland Galway, University Road, Galway (Ireland); Ciupik, L. [Astronomy Department, Adler Planetarium and Astronomy Museum, Chicago, IL 60605 (United States); Cui, W.; Finley, J. P. [Department of Physics, Purdue University, West Lafayette, IN 47907 (United States); Duke, C. [Department of Physics, Grinnell College, Grinnell, IA 50112-1690 (United States); Falcone, A. [Department of Astronomy and Astrophysics, 525 Davey Lab, Pennsylvania State University, University Park, PA 16802 (United States); Finnegan, G., E-mail: beilicke@physics.wustl.edu [Department of Physics and Astronomy, University of Utah, Salt Lake City, UT 84112 (United States)

2011-09-01T23:59:59.000Z

368

E-Print Network 3.0 - altdorf se germany Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

altdorf se germany Search Powered by Explorit Topic List Advanced Search Sample search results for: altdorf se germany Page: << < 1 2 3 4 5 > >> 1 195Schweiz. Z.Forstwes. 156...

369

E-Print Network 3.0 - atuba se brasil Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

se brasil Search Powered by Explorit Topic List Advanced Search Sample search results for: atuba se brasil Page: << < 1 2 3 4 5 > >> 1 CROCODYLOMORPH EGGS AND EGGSHELLS FROM THE...

370

E-Print Network 3.0 - amor se encontram Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

I j encontra-se plantada... intervalo I 0; 4 2; 1; 6 26; R 2 . A horta encontra-se sub-dividida em quatro rectangulos mais... 26; R 2 de12;nido por E ...

371

En Colombia se baila así: Intersectional Bodies, Race, Gender, and Nation Building in the Barranquilla Carnival  

E-Print Network [OSTI]

continente se fusionó la creatividad social del indio y delimportante de la cultura: la creatividad social del hombre.

Tamayo Duque, Ana Maria

2012-01-01T23:59:59.000Z

372

Multichannel CdZnTe Gamma Ray Spectrometer  

SciTech Connect (OSTI)

A 3 cm{sup 3} multichannel gamma spectrometer for DOE applications is under development by Digirad Corporation. The device is based on a position sensitive detector packaged in a compact multi-chip module (MCM) with integrated readout circuitry. The modular, multichannel design will enable identification and quantitative analysis of radionuclides in extended sources, or sources containing low levels of activity. The MCM approach has the advantages that the modules are designed for imaging applications, and the sensitivity can be arbitrarily increased by increasing the number of pixels, i.e. adding modules to the instrument. For a high sensitivity probe, the outputs for each pixel can be corrected for gain and offset variations, and summed digitally. Single pixel results obtained with discrete low noise readout indicate energy resolution of 3 keV can be approached with currently available CdZnTe. The energy resolution demonstrated to date with MCMs for 511 keV gamma rays is 10 keV.

F. P. Doty; C. L. Lingren; B. A. Apotovsky; J. Brunsch; J. F. Butler; T. Collins; R. L. Conwell; S. Friesenhahn; J. Gormley; B. Pi; S. Zhao (Digirad Corp., San Diego, CA); F. L. Augustine, Augustine Engineering, Encinitas, CA; B. A. Bennet; E. Cross; R. B. James (Sandia Nat'l. Labs.)

1998-07-22T23:59:59.000Z

373

Propagation of Gravitational Waves in Generalized TeVeS  

E-Print Network [OSTI]

Efforts are underway to improve the design and sensitivity of gravitational waves detectors, with the hope that the next generation of these detectors will observe a gravitational wave signal. Such a signal will not only provide information on dynamics in the strong gravity regime that characterizes potential sources of gravitational waves, but will also serve as a decisive test for alternative theories of gravitation that are consistent with all other current experimental observations. We study the linearized theory of the tensor-vector-scalar theory of gravity (TeVeS) with generalized vector action, an alternative theory of gravitation designed to explain the apparent deficit of visible matter in galaxies and clusters of galaxies without postulating yet undetected dark matter. We find the polarization states and propagation speeds for gravitational waves in vacuum, and show that in addition to the usual transverse-traceless propagation modes, there are two more transverse modes and two trace modes. Additionally, the propagation speeds are different from c.

Eva Sagi

2010-01-11T23:59:59.000Z

374

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells  

E-Print Network [OSTI]

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A. Rockettb , M. Edoffa , L. Stolta a A°ngstro¨m Solar Center, Uppsala University, P.O. Box 534, SE-751 21 Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been

Rockett, Angus

375

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

376

Phonon and thermal properties of exfoliated TaSe2 thin films T. R. Pope,2  

E-Print Network [OSTI]

Phonon and thermal properties of exfoliated TaSe2 thin films Z. Yan,1 C. Jiang,1 T. R. Pope,2 C. F diselenide (2H-TaSe2) obtained via the "graphene-like" mechanical exfoliation of crystals grown by chemical films exfoliated from TaSe2 and other metal dichalcogenides, as well as for evaluating self

377

Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction  

E-Print Network [OSTI]

High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

Zhaoquan Zeng; Timothy A. Morgan; Dongsheng Fan; Chen Li; Yusuke Hirono; Xian Hu; Yanfei Zhao; Joon Sue Lee; Zhiming M. Wang; Jian Wang; Shuiqing Yu; Michael E. Hawkridge; Mourad Benamara; Gregory J. Salamo

2013-03-11T23:59:59.000Z

378

Electronic and thermoelectric properties of Ce{sub 3}Te{sub 4} and La{sub 3}Te{sub 4} computed with density functional theory with on-site Coulomb interaction correction  

SciTech Connect (OSTI)

The electronic properties and Seebeck coefficients of Ce{sub 3}Te{sub 4} and La{sub 3}Te{sub 4} are computed using Density Functional Theory with on-site Coulomb interaction correction. We found that the Seebeck coefficients of Ce{sub 3}Te{sub 4} and La{sub 3}Te{sub 4} are almost equal at temperatures larger than the Curie temperature of Ce{sub 3}Te{sub 4}, and in good agreement with the measurements reported by May et al. [Phys. Rev. B 86, 035135 (2012)]. At temperatures below the Curie temperature, the Seebeck coefficient of Ce{sub 3}Te{sub 4} increases due to the ferromagnetic ordering, which leads the f-electron of Ce to contribute to the Seebeck coefficient in the relevant range of electron concentration.

Vo, Trinh; Allmen, Paul von; Huang, Chen-Kuo; Ma, James; Bux, Sabah; Fleurial, Jean-Pierre [Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109 (United States)

2014-10-07T23:59:59.000Z

379

J/{psi} measurements in 7 TeV p-p collisions with ALICE using EMCal-triggered events  

SciTech Connect (OSTI)

J/{psi} measurements can be performed with the ALICE experiment through the dilepton decay into e{sup -}e{sup +} (for rapidity Double-Vertical-Line y Double-Vertical-Line <0.9) and {mu}{sup -}{mu}{sup +} (for rapidity -4.0se because the mechanism of charmonium production in hadron interactions is not yet fully understood. The ALICE Eletromagnetic Calorimeter (EMCal) p{sub T} extends the range of J/{psi} measurements, since it provides electron/hadron discrimination for higher p{sub T} values in comparison to other electron PID techniques in ALICE. The EMCal can also provide fast triggers for events containing high energy electrons. In 2011, during proton-proton collisions at 7 TeV, the ALICE EMCal trigger was intensively used for event selection of showers above 4.8 GeV. In this work, some results from 2011 proton-proton collisions are presented, showing a J/{psi} measurement for transversal momentum above 6 GeV/c, due to a combination of the ALICE EMCal PID and trigger system.

Figueredo, M. A. [Universidade de Sao Paulo (Brazil); Collaboration: ALICE Collaboration

2013-03-25T23:59:59.000Z

380

Local Charge Neutrality Condition, Fermi Level, and Carrier Compensation of CdTe Polycrystalline Thin Film in CdS/CdTe Solar Cells  

E-Print Network [OSTI]

Te Solar Energy Research Center, NJIT, Newark, NJ 07102 2 National Renewable Energy Laboratory, Golden, CO in the band gap of semiconductors according to the charging and transition energy levels of the state being single or multiple, and according to the atomic configuration and formation of energy of the state being

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
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381

Note on XMM-Newton observations of the first unidentified TeV gamma-ray source TeV J2032+4130 by Horns et al. astro-ph/0705.0009  

E-Print Network [OSTI]

I comment on the -- apparent -- diffuse X-ray emission reported by Horns et al. in their XMM observations of TeV J2032+4130

Yousaf Butt

2007-05-02T23:59:59.000Z

382

Polymorphic transformation in TlSe and the electrical properties of phases  

SciTech Connect (OSTI)

Alloys in the TlSe-Se system on the side of the TlSe compound in the phase diagram have been investigated using differential thermal, X-ray powder diffraction, and microstructural analyses. The phase diagram of the system has been constructed, and the temperature dependences of the electrical conductivity of the phases obtained have been examined. An analysis of the thermograms of alloys in the (TlSe){sub 0.96}-Se{sub 0.04} system has revealed a structural phase transition at a temperature of 470 {+-} 1 K. Investigations into the temperature dependences of the electrical conductivity in the range 120-450 K have demonstrated that the temperature dependence of the electrical conductivity for the (TlSe){sub 0.96}-Se{sub 0.04} alloy exhibits metallic behavior.

Najafov, A. I. [Azerbaijan National Academy of Sciences, Institute of Radiation Problems (Azerbaijan); Guseinov, G. G.; Alekperov, O. Z. [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan); Sardarly, R. M., E-mail: sardarli@yahoo.com; Abdullaev, A. P.; Eyubova, N. A. [Azerbaijan National Academy of Sciences, Institute of Radiation Problems (Azerbaijan)

2008-09-15T23:59:59.000Z

383

X-RAY ESCAPE PEAK VARIATIONS IN DIODES MADE FROM DOUBLY TRAVELLING SOLVENT GROWN p-TYPE CdTe  

E-Print Network [OSTI]

293 X-RAY ESCAPE PEAK VARIATIONS IN DIODES MADE FROM DOUBLY TRAVELLING SOLVENT GROWN p-TYPE CdTe H On a étudié la variation de l'intensité du pic d'échappement d'un compteur CdTe en fonction de la tension de height on the applied diode voltage was measured at diodes made from doubly travelling solvent grown CdTe

Paris-Sud XI, Université de

384

COMPARATIVE STUDY OF CdTe AND GaAs PHOTOREFRACTIVE PERFORMANCES FROM 1m TO 1.55m  

E-Print Network [OSTI]

1 COMPARATIVE STUDY OF CdTe AND GaAs PHOTOREFRACTIVE PERFORMANCES FROM 1µm TO 1.55µm L.A. de CdTe at different wavelengths from 1.06µm to 1.55µm. The sensitivity and performances of different for the extension of the photorefractive effect towards the wavelength region of 1.3-1.5µm. CdTe appears

Paris-Sud XI, Université de

385

Growth of CdTe Films on Amorphous Substrates Using CaF2 Nanorods as a Buffer Layer  

E-Print Network [OSTI]

Growth of CdTe Films on Amorphous Substrates Using CaF2 Nanorods as a Buffer Layer NICHOLAS LICAUSI biaxially textured CdTe films were grown on biaxial CaF2 buffer layers. The CaF2 nanorods were grown by oblique angle vapor deposition and possessed a {111}h121i biaxial texture. The CdTe film was deposited

Wang, Gwo-Ching

386

REVIEW OF CdTe MEDICAL APPLICATIONS Radiation Monitoring Devices, Inc. 44 Hunt St., Watertown, Massachusetts 02172, U. S. A.  

E-Print Network [OSTI]

REVIEW OF CdTe MEDICAL APPLICATIONS G. ENTINE Radiation Monitoring Devices, Inc. 44 Hunt St place de dents synthé- tiques. Par ailleurs, les détecteurs CdTe ont été utilisés pour le diagnostic d développer des photo- conducteurs X à base de CdTe pour les tomo-densitomètres ; toutefois, des progrès

Paris-Sud XI, Université de

387

Epitaxial growth of CdTe oriented thin films, infrared characterization and possible applications to photo-voltaic cells  

E-Print Network [OSTI]

573 Epitaxial growth of CdTe oriented thin films, infrared characterization and possible décembre 1979, accepté le 12 décembre 1979) Résumé. 2014 Des films minces orientés de CdTe, d de CdTe cubique dont la face (111), polie mécaniquement et décapée chimiquement, est préalablement

Paris-Sud XI, Université de

388

CONTRIBUTION TO THE DETERMINATION OF DEEP TRAPPING LEVELS IN HIGH RESISTIVITY FILMS OF n-TYPE CdTe  

E-Print Network [OSTI]

-TYPE CdTe C. LHERMITTE, D. CARLES and C. VAUTIER Laboratoire de Physique des couches minces, Faculté des conduction à l'obscurité et de la photoconductivité des couches minces de CdTe de type n nous permet de and the photoconductivity of n-type CdTe films enables us to emphasize the existence of a distribution of traps located

Boyer, Edmond

389

Development of a Total Energy, Environment and Asset Management (TE2AM tm) Curriculum  

SciTech Connect (OSTI)

The University of Wisconsin Department of Engineering Professional Development (EPD) has completed the sponsored project entitled, Development of a Total Energy, Environment and Asset Management (TE2AM™) Curriculum. The project involved the development of a structured professional development program to improve the knowledge, skills, capabilities, and competencies of engineers and operators of commercial buildings. TE2AM™ advances a radically different approach to commercial building design, operation, maintenance, and end-­?of-­?life disposition. By employing asset management principles to the lifecycle of a commercial building, owners and occupants will realize improved building performance, reduced energy consumption and positive environmental impacts. Through our commercialization plan, we intend to offer TE2AM™ courses and certificates to the professional community and continuously improve TE2AM™ course materials. The TE2AM™ project supports the DOE Strategic Theme 1 -­? Energy Security; and will further advance the DOE Strategic Goal 1.4 Energy Productivity. Through participation in the TE2AM™ curriculum, engineers and operators of commercial buildings will be eligible for a professional certificate; denoting the completion of a prescribed series of learning activities. The project involved a comprehensive, rigorous approach to curriculum development, and accomplished the following goals: 1. Identify, analyze and prioritize key learning needs of engineers, architects and technical professionals as operators of commercial buildings. 2. Design and develop TE2AM™ curricula and instructional strategies to meet learning needs of the target learning community. 3. Establish partnerships with the sponsor and key stakeholders to enhance the development and delivery of learning programs. 4. Successfully commercialize and sustain the training and certificate programs for a substantial time following the term of the award. The project team was successful in achieving the goals and deliverables set forth in the original proposal. Though attempts were made to adhere to the original project timeline, the team requested, and was granted a 6-­?month project extension, during which time the project was completed.

None

2012-12-31T23:59:59.000Z

390

DISCOVERY OF TeV GAMMA-RAY EMISSION FROM CTA 1 BY VERITAS  

SciTech Connect (OSTI)

We report the discovery of TeV gamma-ray emission coincident with the shell-type radio supernova remnant (SNR) CTA 1 using the VERITAS gamma-ray observatory. The source, VER J0006+729, was detected as a 6.5 standard deviation excess over background and shows an extended morphology, approximated by a two-dimensional Gaussian of semimajor (semiminor) axis 0. Degree-Sign 30 (0. Degree-Sign 24) and a centroid 5' from the Fermi gamma-ray pulsar PSR J0007+7303 and its X-ray pulsar wind nebula (PWN). The photon spectrum is well described by a power-law dN/dE = N {sub 0}(E/3 TeV){sup -{Gamma}}, with a differential spectral index of {Gamma} = 2.2 {+-} 0.2{sub stat} {+-} 0.3{sub sys}, and normalization N {sub 0} = (9.1 {+-} 1.3{sub stat} {+-} 1.7{sub sys}) Multiplication-Sign 10{sup -14} cm{sup -2} s{sup -1} TeV{sup -1}. The integral flux, F {sub {gamma}} = 4.0 Multiplication-Sign 10{sup -12} erg cm{sup -2} s{sup -1} above 1 TeV, corresponds to 0.2% of the pulsar spin-down power at 1.4 kpc. The energetics, colocation with the SNR, and the relatively small extent of the TeV emission strongly argue for the PWN origin of the TeV photons. We consider the origin of the TeV emission in CTA 1.

Aliu, E.; Errando, M. [Department of Physics and Astronomy, Barnard College, Columbia University, NY 10027 (United States)] [Department of Physics and Astronomy, Barnard College, Columbia University, NY 10027 (United States); Archambault, S. [Physics Department, McGill University, Montreal, QC H3A 2T8 (Canada)] [Physics Department, McGill University, Montreal, QC H3A 2T8 (Canada); Arlen, T. [Department of Physics and Astronomy, University of California, Los Angeles, CA 90095 (United States)] [Department of Physics and Astronomy, University of California, Los Angeles, CA 90095 (United States); Aune, T.; Bouvier, A. [Santa Cruz Institute for Particle Physics and Department of Physics, University of California, Santa Cruz, CA 95064 (United States)] [Santa Cruz Institute for Particle Physics and Department of Physics, University of California, Santa Cruz, CA 95064 (United States); Beilicke, M.; Buckley, J. H.; Bugaev, V.; Dickherber, R. [Department of Physics, Washington University, St. Louis, MO 63130 (United States)] [Department of Physics, Washington University, St. Louis, MO 63130 (United States); Benbow, W. [Fred Lawrence Whipple Observatory, Harvard-Smithsonian Center for Astrophysics, Amado, AZ 85645 (United States)] [Fred Lawrence Whipple Observatory, Harvard-Smithsonian Center for Astrophysics, Amado, AZ 85645 (United States); Cesarini, A.; Connolly, M. P. [School of Physics, National University of Ireland Galway, University Road, Galway (Ireland)] [School of Physics, National University of Ireland Galway, University Road, Galway (Ireland); Ciupik, L. [Astronomy Department, Adler Planetarium and Astronomy Museum, Chicago, IL 60605 (United States)] [Astronomy Department, Adler Planetarium and Astronomy Museum, Chicago, IL 60605 (United States); Collins-Hughes, E. [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland)] [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Cui, W. [Department of Physics, Purdue University, West Lafayette, IN 47907 (United States)] [Department of Physics, Purdue University, West Lafayette, IN 47907 (United States); Duke, C. [Department of Physics, Grinnell College, Grinnell, IA 50112-1690 (United States)] [Department of Physics, Grinnell College, Grinnell, IA 50112-1690 (United States); Dumm, J. [School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455 (United States)] [School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455 (United States); Dwarkadas, V. V. [Department of Astronomy and Astrophysics, University of Chicago, Chicago, IL 60637 (United States)] [Department of Astronomy and Astrophysics, University of Chicago, Chicago, IL 60637 (United States); Falcone, A., E-mail: muk@astro.columbia.edu, E-mail: smcarthur@ulysses.uchicago.edu [Department of Astronomy and Astrophysics, 525 Davey Lab, Pennsylvania State University, University Park, PA 16802 (United States); and others

2013-02-10T23:59:59.000Z

391

Optical properties of ZnO/ZnS and ZnO/ZnTe heterostructures for photovoltaic applications  

E-Print Network [OSTI]

ZnTe heterostructures for photovoltaic applications Joshuatoo large for optimal photovoltaic e?ciency. By using band-nanowires can be used as photovoltaic devices with organic

Schrier, Joshua; Demchenko, Denis O.; Wang, Lin-Wang; Alivisatos, A. Paul

2008-01-01T23:59:59.000Z

392

Analysis of Alternate Methods to Obtain Stabilized Power Performance of CdTe and CIGS PV Modules (Presentation)  

SciTech Connect (OSTI)

This presentation outlines an analysis of alternate methods to obtain stabilized power performance of CdTe and CIGS PV modules.

del Cueto, J. A.; Deline, C. A.; Rummel, S.

2011-02-01T23:59:59.000Z

393

A Search for a Light Charged Higgs Boson Decaying to cs at ?s = 7 TeV.  

E-Print Network [OSTI]

??A search for a light charged Higgs boson decaying into cs is presented using data recorded in pp collisions at ?s = 7 TeV. The… (more)

Martyniuk, Alex Christopher

2011-01-01T23:59:59.000Z

394

The Tellurophosphate K4P8Te4: Phase-Change Properties, Exfoliation, Photoluminescence in Solution and Nanospheres  

E-Print Network [OSTI]

The Tellurophosphate K4P8Te4: Phase-Change Properties, Exfoliation, Photoluminescence in Solution- state NMR spectroscopy, electrospray ionization mass spectrometry, and PDF analysis indicate exfoliation

Weliky, David

395

Calcul de la variation de mobilit des lectrons dans PbTe type n entre 50 et 300 K  

E-Print Network [OSTI]

, Classification Physics Abstracts 72.20F 1. Introduction. Les chalcog6nures tel le tellurure de plomb (PbTe) sont

Paris-Sud XI, Université de

396

Exploring alternative symmetry breaking mechanisms at the LHC with 7, 8 and 10 TeV total energy  

E-Print Network [OSTI]

In view of the annnouncement that in 2012 the LHC will run at 8 TeV, we study the possibility of detecting signals of alternative mechanisms of ElectroWeak Symmetry Breaking, described phenomenologically by unitarized models, at energies lower than 14 TeV. A complete calculation with six fermions in the final state is performed using the PHANTOM event generator. Our results indicate that at 8 TeV some of the scenarios with TeV scale resonances are likely to be identified while models with no resonances or with very heavy ones will be inaccessible, unless the available luminosity will be much higher than expected.

Alessandro Ballestrero; Diogo Buarque Franzosi; Ezio Maina

2012-03-13T23:59:59.000Z

397

Characterization of Min-K TE-1400 Thermal Insulation  

SciTech Connect (OSTI)

Min-K 1400TE insulation material was characterized at Oak Ridge National Laboratory for use in structural applications under gradient temperature conditions. Initial compression testing was performed at room temperature at various loading rates ranging between 5 and 500 psi/hour (?35 and 3500 kPa/hour) to determine the effect of sample size and test specimen geometry on the compressive strength of Min-K. To determine the loading rates that would be used for stress relaxation testing, compression tests were next carried out at various levels followed by stress relaxation under constant strain at temperatures of 650, 850, and 900oC. Additional high temperature compression testing was performed with samples loaded at a rate of 53 psi/hour (365 kPa/hour) in three load steps of 50, 100 and 200 psi (345, 690, and 1380 kPa) with quick unload/load cycles between steps and followed by a hold period in load control (3 to 100 hours) to allow for sample creep. Testing was carried out at 190, 382, 813, and 850oC. Isothermal stress relaxation testing was performed at temperatures of 190, 382, 813, and 850oC and initial loads of 100 and 200 psi (690 and 1380 kPa). Gradient stress relaxation testing was intended to be performed at temperatures of 850/450oC and 450/190oC with initial loads of 100 or 200 psi (690 and 1380 kPa) performed under constant strain utilizing a twelve-step loading scheme with loading every half hour at a rate of 5.56% strain/hour.

Hemrick, James Gordon [ORNL; Lara-Curzio, Edgar [ORNL; King, James [ORNL

2008-07-01T23:59:59.000Z

398

High-Pressure Synthesis and Structure Determination of K6(SeO4)(SeO5), The First Potassium Orthoselenate(VI)  

SciTech Connect (OSTI)

The authors report on the first synthesis of a potassium orthoselenate(VI), K{sub 6}(SeO{sub 4})(SeO{sub 5}), and the structure determination from synchrotron powder diffraction data. The title compound crystallizes in the tetragonal space group P4{sub 1}2{sub 1}2 with a = 8.1259(1) {angstrom}, c = 17.4953(2) {angstrom}, V = 1155.21(2) {angstrom}{sup 3}, and Z = 4. Selenium displays two different complex anions, tetrahedral SeO{sub 4}{sup 2-} and trigonal-bipyramidal SeO{sub 5}{sup 4-}. When the formula is reduced to A{sub 3}B, the spatial arrangement of the constituting building units can be derived from the Li{sub 3}Bi type of structure.

Orosel,D.; Dinnebeier, R.; Jansen, M.

2006-01-01T23:59:59.000Z

399

Discovery of TeV Gamma-Ray Emission from the Cygnus Region  

SciTech Connect (OSTI)

The diffuse gamma radiation arising from the interaction of cosmic ray particles with matter and radiation in the Galaxy is one of the few probes available to study the origin of the cosmic rays. Milagro is a water Cherenkov detector that continuously views the entire overhead sky. The large field-of-view combined with the long observation time makes Milagro the most sensitive instrument available for the study of large, low surface brightness sources such as the diffuse gamma radiation arising from interactions of cosmic radiation with interstellar matter. In this paper we present spatial and flux measurements of TeV gamma-ray emission from the Cygnus Region. The TeV image shows at least one new source MGRO J2019+37 as well as correlations with the matter density in the region as would be expected from cosmic-ray proton interactions. However, the TeV gamma-ray flux as measured at {approx}12 TeV from the Cygnus region (after excluding MGRO J2019+37) exceeds that predicted from a conventional model of cosmic ray production and propagation. This observation indicates the existence of either hard-spectrum cosmic-ray sources and/or other sources of TeV gamma rays in the region.

Abdo, A.A.; Allen, B.; Berley, D.; Blaufuss, E.; Casanova, S.; Chen, C.; Coyne, D.G.; Delay, R.S.; Dingus, B.L.; Ellsworth, R.W.; Fleysher, L.; Fleysher, R.; Gonzalez,; Goodman, J.A.; Hays, E.; Hoffman, C.M.; Kolterman, B.E.; Kelley, L.A.; Lansdell, C.P.; Linnemann, J.T.; McEnery, J.E.

2006-11-28T23:59:59.000Z

400

Discovery of TeV Gamma-Ray Emission from the Cygnus Region of the Galaxy  

E-Print Network [OSTI]

The diffuse gamma radiation arising from the interaction of cosmic ray particles with matter and radiation in the Galaxy is one of the few probes available to study the origin of the cosmic rays. Milagro is a water Cherenkov detector that continuously views the entire overhead sky. The large field-of-view combined with the long observation time makes Milagro the most sensitive instrument available for the study of large, low surface brightness sources such as the diffuse gamma radiation arising from interactions of cosmic radiation with interstellar matter. In this paper we present spatial and flux measurements of TeV gamma-ray emission from the Cygnus Region. The TeV image shows at least one new source MGRO J2019+37 as well as correlations with the matter density in the region as would be expected from cosmic-ray proton interactions. However, the TeV gamma-ray flux as measured at ~12 TeV from the Cygnus region (after excluding MGRO J2019+37) exceeds that predicted from a conventional model of cosmic ray production and propagation. This observation indicates the existence of either hard-spectrum cosmic-ray sources and/or other sources of TeV gamma rays in the region.

A. A. Abdo; B. Allen; D. Berley; E. Blaufuss; S. Casanova; C. Chen; D. G. Coyne; R. S. Delay; B. L. Dingus; R. W. Ellsworth; L. Fleysher; R. Fleysher; M. M. Gonzalez; J. A. Goodman; E. Hays; C. M. Hoffman; B. E. Kolterman; L. A. Kelley; C. P. Lansdell; J. T. Linnemann; J. E. McEnery; A. I. Mincer; I. V. Moskalenko; P. Nemethy; D. Noyes; J. M. Ryan; F. W. Samuelson; P. M. Saz Parkinson; M. Schneider; A. Shoup; G. Sinnis; A. J. Smith; A. W. Strong; G. W. Sullivan; V. Vasileiou; G. P. Walker; D. A. Williams; X. W. Xu; G. B. Yodh

2006-11-21T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Phenomenology of TeV Right-handed Neutrino and the Dark Matter Model  

E-Print Network [OSTI]

In a model of TeV right-handed (RH) neutrino by Krauss, Nasri, and Trodden, the sub-eV scale neutrino masses are generated via a 3-loop diagram with the vanishing see-saw mass forbidden by a discrete symmetry, and the TeV mass RH neutrino is simultaneously a novel candidate for the cold dark matter. However, we show that with a single RH neutrino it is not possible to generate two mass-square differences as required by the oscillation data. We extend the model by introducing one more TeV RH neutrino and show that it is possible to satisfy the oscillation pattern within the modified model. After studying in detail the constraints coming from the dark matter, lepton flavor violation and the muon anomalous magnetic moment, and the neutrinoless double beta decay, we explore the parameter space and derive predictions of the model. Finally, we study the production and decay signatures of the TeV RH neutrinos at TeV $e^+ e^-/\\mu^+ \\mu^-$ colliders.

Kingman Cheung; Osamu Seto

2004-03-08T23:59:59.000Z

402

Synthesis, crystal and electronic structure, and physical properties of the new lanthanum copper telluride La{sub 3}Cu{sub 5}Te{sub 7}  

SciTech Connect (OSTI)

The new lanthanum copper telluride La{sub 3}Cu{sub 5-x}Te{sub 7} has been obtained by annealing the elements at 1073 K. Single-crystal X-ray diffraction studies revealed that the title compound crystallizes in a new structure type, space group Pnma (no. 62) with lattice dimensions of a=8.2326(3) A, b=25.9466(9) A, c=7.3402(3) A, V=1567.9(1) A{sup 3}, Z=4 for La{sub 3}Cu{sub 4.86(4)}Te{sub 7}. The structure of La{sub 3}Cu{sub 5-x}Te{sub 7} is remarkably complex. The Cu and Te atoms build up a three-dimensional covalent network. The coordination polyhedra include trigonal LaTe{sub 6} prisms, capped trigonal LaTe{sub 7} prisms, CuTe{sub 4} tetrahedra, and CuTe{sub 3} pyramids. All Cu sites exhibit deficiencies of various extents. Electrical property measurements on a sintered pellet of La{sub 3}Cu{sub 4.86}Te{sub 7} indicate that it is a p-type semiconductor in accordance with the electronic structure calculations. -- Graphical abstract: Oligomeric unit comprising interconnected CuTe{sub 3} pyramids and CuTe{sub 4} tetrahedra. Display Omitted Research highlights: {yields} La{sub 3}Cu{sub 5-x}Te{sub 7} adopts a new structure type. {yields} All Cu sites exhibit deficiencies of various extents. {yields} The coordination polyhedra include trigonal LaTe{sub 6} prisms, capped trigonal LaTe{sub 7} prisms, CuTe{sub 4} tetrahedra and CuTe{sub 3} pyramids. {yields} La{sub 3}Cu{sub 5-x}Te{sub 7} is a p-type semiconductor.

Zelinska, Mariya; Assoud, Abdeljalil [Department of Chemistry, University of Waterloo, Waterloo, ON, Canada N2L 3G1 (Canada); Kleinke, Holger, E-mail: kleinke@uwaterloo.c [Department of Chemistry, University of Waterloo, Waterloo, ON, Canada N2L 3G1 (Canada)

2011-03-15T23:59:59.000Z

403

Pulsed laser deposition of Mn doped CdSe quantum dots for improved solar cell performance  

SciTech Connect (OSTI)

In this work, we demonstrate (1) a facile method to prepare Mn doped CdSe quantum dots (QDs) on Zn{sub 2}SnO{sub 4} photoanodes by pulsed laser deposition and (2) improved device performance of quantum dot sensitized solar cells of the Mn doped QDs (CdSe:Mn) compared to the undoped QDs (CdSe). The band diagram of photoanode Zn{sub 2}SnO{sub 4} and sensitizer CdSe:Mn QD is proposed based on the incident-photon-to-electron conversion efficiency (IPCE) data. Mn-modified band structure leads to absorption at longer wavelengths than the undoped CdSe QDs, which is due to the exchange splitting of the CdSe:Mn conduction band by the Mn dopant. Three-fold increase in the IPCE efficiency has also been observed for the Mn doped samples.

Dai, Qilin; Wang, Wenyong, E-mail: wwang5@uwyo.edu, E-mail: jtang2@uwyo.edu; Tang, Jinke, E-mail: wwang5@uwyo.edu, E-mail: jtang2@uwyo.edu [Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071 (United States); Sabio, Erwin M. [Department of Chemistry, University of Wyoming, Laramie, Wyoming 82071 (United States)

2014-05-05T23:59:59.000Z

404

ADVANCES IN SE-79 ANALYSES ON SAVANNAH RIVER SITE RADIOACTIVE WASTE MATRICES  

SciTech Connect (OSTI)

Waste cleanup efforts underway at the United States Department of Energy's (DOE) Savannah River Site (SRS) in South Carolina, as well as other DOE nuclear sites, have created a need to characterize {sup 79}Se in radioactive waste inventories. Successful analysis of {sup 79}Se in high activity waste matrices is challenging for a variety of reasons. As a result of these unique challenges, the successful quantification of {sup 79}Se in the types of matrices present at SRS requires an extremely efficient and selective separation of {sup 79}Se from high levels of interfering radionuclides. A robust {sup 79}Se radiochemical separation method has been developed at the Savannah River National Laboratory (SRNL) which is routinely capable of successfully purifying {sup 79}Se from a wide range of interfering radioactive species. In addition to a dramatic improvements in the Kd, ease, and reproducibility of the analysis, the laboratory time has been reduced from several days to only 6 hours.

Diprete, D; C Diprete, C; Ned Bibler, N; Cj Bannochie, C; Michael Hay, M

2009-03-16T23:59:59.000Z

405

Photovoltaic Devices Employing Ternary PbSxSe1-x Nanocrystals  

SciTech Connect (OSTI)

We report solar cells based on highly confined nanocrystals of the ternary compound PbSxSe1-x. Crystalline, monodisperse alloyed nanocrystals are obtained using a one-pot, hot injection reaction. Rutherford back scattering and energy filtered transmission electron microscopy suggest that the S and Se anions are uniformly distributed in the alloy nanoparticles. Photovoltaic devices made using ternary nanoparticles are more efficient than either pure PbS or pure PbSe based nanocrystal devices.

Ma, Wanli; Luther, Joseph; Zheng, Haimei; Wu, Yue; Alivisatos, A. Paul

2009-02-05T23:59:59.000Z

406

Synthesis and Crystal Structure Study of 2’-Se-Adenosine-Derivatized DNA  

SciTech Connect (OSTI)

The selenium derivatization of nucleic acids is a novel and promising strategy for 3D structure determination of nucleic acids. Selenium can serve as an excellent anomalous scattering center to solve the phase problem, which is one of the two major bottlenecks in macromolecule X-ray crystallography. The other major bottleneck is crystallization. It has been demonstrated that the incorporated selenium functionality at the 2'-positions of the nucleosides and nucleotides is stable and does not cause significant structure perturbation. Furthermore, it was observed that the 2'-Se-derivatization could facilitate crystallization of oligonucleotides with fast crystal growth and high diffraction quality. Herein, we describe a convenient synthesis of the 2'-Se-adenosine phosphoramidite, and report the first synthesis and X-ray crystal structure determination of the DNA containing the 2'-Se-A derivatization. The 3D structure of 2'-Se-A-DNA decamer [5'-GTACGCGT(2'-Se-A)C-3']{sub 2} was determined at 1.75 {angstrom} resolution, the 2'-Se-functionality points to the minor groove, and the Se-modified and native structures are virtually identical. Moreover, we have observed that the 2'-Se-A modification can greatly facilitate the crystal growth with high diffraction quality. In conjunction with the crystallization facilitation by the 2'-Se-U and 2'-Se-T, this novel observation on the 2'-Se-A functionality suggests that the 2'-Se moiety is sole responsible for the crystallization facilitation and the identity of nucleobases does not influence the crystal growth significantly.

Sheng, J.; Salon, J; Gan, J; Huang, Z

2010-01-01T23:59:59.000Z

407

Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2Te3  

SciTech Connect (OSTI)

Three-dimensional topological insulators are a new state of quantum matter with a bulk gap and odd number of relativistic Dirac fermions on the surface. By investigating the surface state of Bi{sub 2}Te{sub 3} with angle-resolved photoemission spectroscopy, we demonstrate that the surface state consists of a single nondegenerate Dirac cone. Furthermore, with appropriate hole doping, the Fermi level can be tuned to intersect only the surface states, indicating a full energy gap for the bulk states. Our results establish that Bi{sub 2}Te{sub 3} is a simple model system for the three-dimensional topological insulator with a single Dirac cone on the surface. The large bulk gap of Bi{sub 2}Te{sub 3} also points to promising potential for high-temperature spintronics applications.

Siemons, W.

2010-02-24T23:59:59.000Z

408

First-Principles Study of Surface States of Bi{sub 2}Te{sub 3}  

SciTech Connect (OSTI)

Bi{sub 2}Te{sub 3} is a topological insulator with time reversal symmetry possessing a single Dirac cone at a given surface. The surface states of topological insulators play a critical role in exotic physical phenomena and their applications. We investigate the surface states of thin films of Bi{sub 2}Te{sub 3}(111) using density-functional theory including spin-orbit coupling. Considering one to six quintuple layers (QLs) of Bi{sub 2}Te{sub 3} films, we identify the surface states from calculated band structures using the decay length of the surface states and electron density plots. We show that the films of 1 and 2 QLs are too thin to hold the surface states protected topologically, and that for thicker films bands identified as surface states at {Gamma}-bar lose their surface-state features away from {Gamma}-bar. This method can be applied to other topological insulators.

Park, Kyungwha [Department of Physics, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2011-12-26T23:59:59.000Z

409

Phase assembly and photo-induced current in CdTe-ZnO nanocomposite thin films  

SciTech Connect (OSTI)

Sequential radio-frequency sputtering was used to produce CdTe-ZnO nanocomposite thin films with varied semiconductor-phase extended structures. Control of the spatial distribution of CdTe nanoparticles within the ZnO embedding phase was used to influence the semiconductor phase connectivity, contributing to both changes in quantum confinement induced spectral absorption and carrier transport characteristics of the resulting nanocomposite. An increased number density of CdTe particles deposited along the applied field direction produced an enhancement in the photo-induced current observed. These results highlight the opportunity to employ long-range phase assembly as a means to control optoelectronic properties of significant interest for photovoltaic applications.

Beal, R. J.; Kana Kana, J. B. [Department of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85721 (United States); Potter, B. G. Jr. [Department of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85721 (United States); College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States)

2012-07-16T23:59:59.000Z

410

Temporal and temperature evolution of electric field in CdTe:In radiation detectors  

SciTech Connect (OSTI)

We employed measurement of the Pockels electro-optic effect to study the electric field and space charge dynamics in semi-insulating CdTe doped with indium. We performed measurements of time and temperature dependence of the electric field. The polarization due to space charge build-up decreases with increasing temperature. Increase of temperature, therefore, leads to de-polarization in CdTe:In detectors which are opposite to the CdTe:Cl samples studied to date. We have shown that the thermally activated depolarization cannot be explained by the conventional model used for the description of space charge formation so far and an alternative model involving a recombination level was suggested and successfully used.

D?di?, V., E-mail: dedicv@karlov.mff.cuni.cz; Zázvorka, J.; Rejhon, M.; Franc, J.; Grill, R. [Faculty of Mathematics and Physics, Institute of Physics, Charles University, KeKarlovu 5, Prague 2 CZ-121 16 (Czech Republic); Sellin, P. J. [Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom)

2014-08-07T23:59:59.000Z

411

Hybrid model of GeV-TeV gamma ray emission from Galactic Center  

E-Print Network [OSTI]

The observations of high energy $\\gamma$-ray emission from the Galactic center (GC) by HESS, and recently by Fermi, suggest the cosmic ray acceleration in the GC and possibly around the supermassive black hole. In this work we propose a lepton-hadron hybrid model to explain simultaneously the GeV-TeV $\\gamma$-ray emission. Both electrons and hadronic cosmic rays were accelerated during the past activity of the GC. Then these particles would diffuse outwards and interact with the interstellar gas and background radiation field. The collisions between hadronic cosmic rays with gas is responsible to the TeV $\\gamma$-ray emission detected by HESS. With fast cooling in the strong radiation field, the electrons would cool down and radiate GeV photons through inverse Compton scattering off the soft background photons. This scenario provides a natural explanation of the observed GeV-TeV spectral shape of $\\gamma$-rays.

Yi-Qing Guo; Qiang Yuan; Cheng Liu; Ai-Feng Li

2014-09-14T23:59:59.000Z

412

Pair correlations in the neutrinoless double-{beta} decay candidate {sup 130}Te  

SciTech Connect (OSTI)

Pair correlations in the ground state of {sup 130}Te have been investigated using pair-transfer experiments to explore the validity of approximations in calculating the matrix element for neutrinoless double-{beta} decay. This nucleus is a candidate for the observation of such decay, and a good understanding of its structure is crucial for eventual calculations of the neutrino mass, should such a decay indeed be observed. For proton-pair adding, strong transitions to excited 0{sup +} states had been observed in the Te isotopes by Alford et al. [Nucl. Phys. A 323, 339 (1979)], indicating a breaking of the BCS approximation for protons in the ground state. We measured the neutron-pair removing (p,t) reaction on {sup 130}Te and found no indication of a corresponding splitting of the BCS nature of the ground state for neutrons.

Bloxham, T.; Freedman, S. J. [Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kay, B. P.; Schiffer, J. P.; Clark, J. A. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Deibel, C. M. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Joint Institute for Nuclear Astrophysics, Michigan State University, East Lansing, Michigan 48825 (United States); Freeman, S. J.; Howard, A. M.; McAllister, S. A.; Sharp, D. K.; Thomas, J. S. [Schuster Laboratory, University of Manchester, Manchester, M13 9PL (United Kingdom); Parker, P. D. [A. W. Wright Nuclear Structure Laboratory, Yale University, New Haven, Connecticut 06520 (United States)

2010-08-15T23:59:59.000Z

413

Pair correlations in neutrinoless double {beta} decay candidate {sup 130}Te.  

SciTech Connect (OSTI)

Pair correlations in the ground state of {sup 130}Te have been investigated using pair-transfer experiments to explore the validity of approximations in calculating the matrix element for neutrinoless double-{beta} decay. This nucleus is a candidate for the observation of such decay, and a good understanding of its structure is crucial for eventual calculations of the neutrino mass, should such a decay indeed be observed. For proton-pair adding, strong transitions to excited 0{sup +} states had been observed in the Te isotopes by Alford et al. [Nucl. Phys. A 323, 339 (1979)], indicating a breaking of the BCS approximation for protons in the ground state. We measured the neutron-pair removing (p,t) reaction on {sup 130}Te and found no indication of a corresponding splitting of the BCS nature of the ground state for neutrons.

Bloxham, T.; Kay, B. P.; Schiffer, J. P.; Clark, J. A.; Deibel, C. M.; Freeman, S. J.; Freedman, S. J.; Howard, A. M.; McAllister, S. A.; Parker, P. D.; Sharp, D. K.; Thomas, J. S. (Physics); ( PSC-USR); (LBNL); (Michigan State Univ.); (Univ. of Manchester); (Yale Univ.)

2010-08-16T23:59:59.000Z

414

Reassessment of the NuTeV determination of the Weinberg angle  

SciTech Connect (OSTI)

In light of the recent discovery of the importance of the isovector EMC effect for the interpretation of the NuTeV determination of sin2 #18;W, it seems timely to reassess the central value and the errors on this fundamental Standard Model parameter derived from the NuTeV data. We also include earlier work on charge symmetry violation and the recent limits on a possible asymmetry between s and ¯s quarks. With these corrections we find a revised NuTeV result of sin2 #18;W = 0.2232 ± 0.0013(stat) ± 0.0024(syst), which is in excellent agreement with the running of sin2 #18;W predicted by the Standard Model.

W. Bentz, I.C. Cloet, J.T. Londergan and A.W. Thomas

2010-10-01T23:59:59.000Z

415

Energy spectrum of charge carriers in Ag{sub 2}Te  

SciTech Connect (OSTI)

On the basis of investigations of the temperature and concentration dependences of kinetic coefficients (the Hall coefficientR, the electrical conductivity {sigma}, and thermopower {alpha}{sub 0}) in n-type Ag{sub 2}Te, it is established that Ag atoms in Ag{sub 2}Te create the shallow donor levels located at a distance of (0.002-7 x 10{sup -5}T) eV from the bottom of the conduction band. It is shown that silver telluride has n-type conductivity starting with the deficiency of Ag {>=} 0.01 at % in the stoichiometric composition, and it is practically impossible to achieve the stoichiometric composition in Ag{sub 2}Te.

Aliev, F. F., E-mail: farzali@physics.ab.az; Jafarov, M. B. [Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

2008-11-15T23:59:59.000Z

416

Diffuse neutrinos from extragalactic supernova remnants: Dominating the 100 TeV IceCube flux  

E-Print Network [OSTI]

IceCube has measured a diffuse astrophysical flux of TeV-PeV neutrinos. The most plausible sources are unique high energy cosmic ray accelerators like hypernova remnants (HNRs) and remnants from gamma ray bursts in star-burst galaxies, which can produce primary cosmic rays with the required energies and abundance. In this case, however, ordinary supernova remnants (SNRs), which are far more abundant than HNRs, produce a comparable or larger neutrino flux in the ranges up to 100-150 TeV energies, implying a spectral break in the IceCube signal around these energies. The SNRs contribution in the diffuse flux up to these hundred TeV energies provides a natural baseline and then constrains the expected PeV flux.

Chakraborty, Sovan

2015-01-01T23:59:59.000Z

417

Photovoltaic performance of ultra-small PbSe quantum dots  

E-Print Network [OSTI]

Y; Alivisatos, AP, Photovoltaic Devices Employing TernaryPhotovoltaic performance of ultra-small PbSe quantum dotsquantum dot, solar cell, photovoltaic, quantum size effect

Ma, Wanli

2014-01-01T23:59:59.000Z

418

Photovoltaic Devices Employing Ternary PbSxSe1-x Nanocrystals  

E-Print Network [OSTI]

Photovoltaic Devices Employing Ternary PbS x Se 1-xalloy nanoparticles. Photovoltaic devices made using ternaryInformation for Efficient Photovoltaic Devices Employing

Alivisatos, A. Paul

2009-01-01T23:59:59.000Z

419

SciTech Connect: A Solution for Solution-Produced [beta]-FeSe...  

Office of Scientific and Technical Information (OSTI)

A Solution for Solution-Produced beta-FeSe: Elucidating and Overcoming Factors that Prevent Superconductivity Citation Details In-Document Search Title: A Solution for...

420

Electrical Transport of Topological Insulator-Bi2Se3 and Thermoelectric Properties of Graphene  

E-Print Network [OSTI]

tapes are detached to exfoliate the crystal into thinnercan also be utilized to exfoliate Bi 2 Se 3 on top of SrTiO

WEI, PENG

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Mechanical and electronic-structure properties of compressed CdSe tetrapod nanocrystals  

E-Print Network [OSTI]

Mechanical and electronic-structure properties of compressed94720 USA The coupling of mechanical and optical propertiestheoretical examination of the mechanical properties of CdSe

Schrier, Joshua; Lee, Byounghak; Wang, Lin-Wang

2008-01-01T23:59:59.000Z

422

Direct Patterning of CdSe Quantum Dots into Sub-100 nm Structures  

SciTech Connect (OSTI)

Ordered, two-dimensional cadmium selenide (CdSe) arrays have been fabricated on indium-doped tin oxide (ITO) electrodes using the pattern replication in nonwetting templates (PRINT) process. CdSe quantum dots (QDs) with an average diameter of 2.7 nm and a pyridine surface ligand were used for patterning. The PRINT technique utilizes a perfluoropolyether (PFPE) elastomeric mold that is tolerant of most organic solvents, thus allowing solutions of CdSe QDs in 4-picoline to be used for patterning without significant deformation of the mold. Nanometer-scale diffraction gratings have been successfully replicated with CdSe QDs.

Hampton, Meredith J.; Templeton, Joseph L.; DeSimone, Joseph M.

2010-01-01T23:59:59.000Z

423

Thermoelectric study of crossroads material MnTe via sulfur doping  

SciTech Connect (OSTI)

Here, we report thermoelectric study of crossroads material MnTe via iso-electronic doping S on the Te-site. MnTe{sub 1-x}S{sub x} samples with nominal S content of x?=?0.00, 0.05, and 0.10 were prepared using a melt-quench method followed by pulverization and spark plasma sintering. The X-ray powder diffraction, scanning electron microscopy, and ZAF-corrected compositional analysis confirmed that S uniformly substitutes Te up to slightly over 2%. A higher content of S in the starting materials led to the formation of secondary phases. The thermoelectric properties of MnTe{sub 1-x}S{sub x} samples were characterized by means of Seebeck coefficient, electrical conductivity, and thermal conductivity measurements from 300?K to 773?K. Furthermore, Hall coefficient measurements and a single parabolic band model were used to help gain insights on the effects of S-doping on the scattering mechanism and the carrier effective mass. As expected, S doping not only introduced hole charge carriers but also created short-range defects that effectively scatter heat-carrying phonons at elevated temperatures. On the other hand, we found that S doping degraded the effective mass. As a result, the ZT of MnTe{sub 0.9}S{sub 0.1} was substantially enhanced over the pristine sample near 400?K, while the improvement of ZT became marginal at elevated temperatures. A ZT???0.65 at 773?K was obtained in all three samples.

Xie, Wenjie, E-mail: xie@imw.uni-stuttgart.de; Populoh, Sascha; Sagarna, Leyre; Trottmann, Matthias [Empa–Swiss Federal Laboratories for Materials Science and Technology, Solid State Chemistry and Catalysis, Uberlandstrasse 129, CH-8600 Dübendorf (Switzerland); Ga??zka, Krzysztof [Empa–Swiss Federal Laboratories for Materials Science and Technology, Solid State Chemistry and Catalysis, Uberlandstrasse 129, CH-8600 Dübendorf (Switzerland); Department of Chemistry and Biochemistry, University of Bern, Freiestrasse 3, CH-3012 Bern (Switzerland); Xiao, Xingxing [Institute for Materials Science, University of Stuttgart, DE-70569 Stuttgart (Germany); Liu, Yufei; He, Jian [Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634-0978 (United States); Weidenkaff, Anke [Empa–Swiss Federal Laboratories for Materials Science and Technology, Solid State Chemistry and Catalysis, Uberlandstrasse 129, CH-8600 Dübendorf (Switzerland); Institute for Materials Science, University of Stuttgart, DE-70569 Stuttgart (Germany)

2014-03-14T23:59:59.000Z

424

Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers  

SciTech Connect (OSTI)

Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors, fabricated by growing p-and n-type CdTe epilayers on (211) n{sup +}-Si substrates using metalorganic vapor-phase epitaxy (MOVPE), were studied by analyzing current-voltage characteristics measured at various temperatures. The diode fabricated shows good rectification properties, however, both forward and reverse biased currents deviate from their ideal behavior. The forward current exhibits typical feature of multi-step tunneling at lower biases; however, becomes space charge limited type when the bias is increased. On the other hand, the reverse current exhibits thermally activated tunneling-type current. It was found that trapping centers at the p-CdTe/n-CdTe junction, which were formed due to the growth induced defects, determine the currents of this diode, and hence limit the performance of the nuclear radiation detectors developed.

Niraula, M.; Yasuda, K.; Wajima, Y.; Yamashita, H.; Tsukamoto, Y.; Suzuki, Y.; Matsumoto, M.; Takai, N.; Tsukamoto, Y.; Agata, Y. [Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan)] [Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan)

2013-10-28T23:59:59.000Z

425

BOX 50005, SE-104 05 STOCKHOLM, SWEDEN, RECEPTION +46 8 673 95 00, FAX +46 8 15 56 70 BESK/VISIT: LILLA FRESCATIVGEN 4A, STOCKHOLM, INFO@KVA.SE HTTP://KVA.SE  

E-Print Network [OSTI]

BOX 50005, SE-104 05 STOCKHOLM, SWEDEN, RECEPTION +46 8 673 95 00, FAX +46 8 15 56 70 BESÃ?K by Patricia K. Kuhl, University of Washington, Seattle, WA, USA and Hon. Dr., Stockholm University, Sweden will be followed by a panel discussion including Hugo Lagercrantz, Karolinska Institutet, Solna, Sweden, Andrew

426

Surface state dominated transport in topological insulator Bi{sub 2}Te{sub 3} nanowires  

SciTech Connect (OSTI)

We report on low temperature magnetoresistance measurements on single-crystalline Bi{sub 2}Te{sub 3} nanowires synthesized via catalytic growth and post-annealing in a Te-rich atmosphere. The observation of Aharonov-Bohm oscillations indicates the presence of topological surface states. Analyses of Subnikov-de Haas oscillations in perpendicular magnetoresistance yield extremely low two-dimensional carrier concentrations and effective electron masses, and very high carrier mobilities. All our findings are in excellent agreement with theoretical predictions of massless Dirac fermions at the surfaces of topological insulators.

Hamdou, Bacel, E-mail: bhamdou@physnet.uni-hamburg.de; Gooth, Johannes; Dorn, August; Nielsch, Kornelius, E-mail: knielsch@physnet.uni-hamburg.de [Institute of Applied Physics, University of Hamburg, Jungiusstrasse 11, 20355 Hamburg (Germany)] [Institute of Applied Physics, University of Hamburg, Jungiusstrasse 11, 20355 Hamburg (Germany); Pippel, Eckhard [Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany)] [Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany)

2013-11-04T23:59:59.000Z

427

Improvement of the energy resolution of CdTe detectors by pulse height correction from waveform  

E-Print Network [OSTI]

Semiconductor detectors made of CdTe crystal have high gamma-ray detection efficiency and are usable at room temperature. However, the energy resolution of CdTe detectors for MeV gamma-rays is rather poor because of the significant hole trapping effect. We have developed a method to improve the energy resolution by correcting the pulse height using the waveform of the signal and achieved 2.0% (FWHM) energy resolution for 662keV gamma-rays. Best energy resolution was achieved at temperatures between -10 degrees C and 0 degrees C.

Kikawa, T; Hiraki, T; Nakaya, T

2011-01-01T23:59:59.000Z

428

Improvement of the energy resolution of CdTe detectors by pulse height correction from waveform  

E-Print Network [OSTI]

Semiconductor detectors made of CdTe crystal have high gamma-ray detection efficiency and are usable at room temperature. However, the energy resolution of CdTe detectors for MeV gamma-rays is rather poor because of the significant hole trapping effect. We have developed a method to improve the energy resolution by correcting the pulse height using the waveform of the signal and achieved 2.0% (FWHM) energy resolution for 662keV gamma-rays. Best energy resolution was achieved at temperatures between -10 degrees C and 0 degrees C.

T. Kikawa; A. K. Ichikawa; T. Hiraki; T. Nakaya

2011-12-21T23:59:59.000Z

429

Ultrahigh Energy Cosmic Rays and Prompt TeV Gamma Rays from Gamma Ray Bursts  

E-Print Network [OSTI]

Gamma Ray Bursts (GRBs) have been proposed as one {\\it possible} class of sources of the Ultrahigh Energy Cosmic Ray (UHECR) events observed up to energies $\\gsim10^{20}\\ev$. The synchrotron radiation of the highest energy protons accelerated within the GRB source should produce gamma rays up to TeV energies. Here we briefly discuss the implications on the energetics of the GRB from the point of view of the detectability of the prompt TeV gamma rays of proton-synchrotron origin in GRBs in the up-coming ICECUBE muon detector in the south pole.

Pijushpani Bhattacharjee; Nayantara Gupta

2003-05-12T23:59:59.000Z

430

Measurement of Dijet Azimuthal Decorrelations in pp Collisions at {radical}(s)=7 TeV  

SciTech Connect (OSTI)

Azimuthal decorrelations between the two central jets with the largest transverse momenta are sensitive to the dynamics of events with multiple jets. We present a measurement of the normalized differential cross section based on the full data set ({integral}Ldt=36 pb{sup -1}) acquired by the ATLAS detector during the 2010 {radical}(s)=7 TeV proton-proton run of the LHC. The measured distributions include jets with transverse momenta up to 1.3 TeV, probing perturbative QCD in a high-energy regime.

Aad, G.; Ahles, F.; Beckingham, M.; Bernhard, R.; Bitenc, U.; Bruneliere, R.; Caron, S.; Carpentieri, C.; Christov, A.; Dahlhoff, A.; Dietrich, J.; Eckert, S.; Fehling-Kaschek, M.; Flechl, M.; Glatzer, J. [Fakultaet fuer Mathematik und Physik, Albert-Ludwigs-Universitaet, Freiburg i.Br. (Germany); Abbott, B. [Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman Oklahoma (United States); Abdallah, J.; Bosman, M.; Casado, M. P.; Cavalli-Sforza, M. [Institut de Fisica d'Altes Energies and Universitat Autonoma de Barcelona and ICREA, Barcelona (Spain)

2011-04-29T23:59:59.000Z

431

Ionic conductivity and dielectric relaxation in {gamma}-irradiated TlGaTe{sub 2} crystals  

SciTech Connect (OSTI)

The switching effect, field and temperature dependences of the permittivity and conductivity of TlGaTe{sub 2} crystals subjected to various {gamma}-irradiation doses are studied. Under rather low electric fields, the phenomenon of threshold switching with an S-shaped current-voltage characteristic containing a portion with negative differential resistance is observed in the crystals. In the region of critical voltages, current and voltage oscillations and imposed modulation are observed. Possible mechanisms of switching, ionic conductivity, disorder, and electrical instability in TlGaTe{sub 2} crystals are discussed.

Sardarli, R. M., E-mail: sardarli@yahoo.com; Samedov, O. A.; Abdullayev, A. P. [National Academy of Sciences of Azerbaijan, Institute of Radiation Problems (Azerbaijan); Huseynov, E. K. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan); Salmanov, F. T.; Alieva, N. A.; Agaeva, R. Sh. [National Academy of Sciences of Azerbaijan, Institute of Radiation Problems (Azerbaijan)

2013-05-15T23:59:59.000Z

432

Unique nanostructures and enhanced thermoelectric performance of melt-spun BiSbTe alloys  

SciTech Connect (OSTI)

We report a melt spinning technique followed by a quick spark plasma sintering procedure to fabricate high-performance p-type Bi{sub 0.52}Sb{sub 1.48}Te{sub 3} bulk material with unique microstructures. The microstructures consist of nanocrystalline domains embedded in amorphous matrix and 5-15 nm nanocrystals with coherent grain boundary. The significantly reduced thermal conductivity leads to a state-of-the-art dimensionless figure of merit ZT{approx}1.56 at 300 K, more than 50% improvement of that of the commercial Bi{sub 2}Te{sub 3} ingot materials.

Xie Wenjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634-0978 (United States); Tang Xinfeng; Yan Yonggao; Zhang Qingjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Tritt, Terry M. [Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634-0978 (United States)

2009-03-09T23:59:59.000Z

433

Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells  

SciTech Connect (OSTI)

Spin Hall effect can be induced both by the extrinsic impurity scattering and by the intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes from normal to inverted. We show that the intrinsic spin Hall effect of the conduction band vanishes on the normal side, while it is finite on the inverted side. This difference gives a direct mechanism to experimentally distinguish the intrinsic spin Hall effect from the extrinsic one.

Yang, Wen; Chang, Kai; /Beijing, Inst. Semiconductors; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

2010-03-19T23:59:59.000Z

434

Shubnikov-de Haas Oscillations in the Bulk Rashba Semiconductor BiTeI  

SciTech Connect (OSTI)

Bulk magnetoresistance quantum oscillations are observed in high quality single crystal samples of BiTeI. This compound shows an extremely large internal spin-orbit coupling, associated with the polarity of the alternating Bi, Te, and I layers perpendicular to the c-axis. The corresponding areas of the inner and outer Fermi surfaces around the A-point show good agreement with theoretical calculations, demonstrating that the intrinsic bulk Rashba-type splitting is nearly 360 meV, comparable to the largest spin-orbit coupling generated in heterostructures and at surfaces.

Bell, C.; Bahramy, M.S.; Murakawa, H.; Checkelsky, J.G.; Arita, R.; Kaneko, Y.; Onose, Y.; Nagaosa, N.; Tokura, Y.; Hwang, H.Y.

2012-07-11T23:59:59.000Z

435

Grain boundary enhanced carrier collection in CdTe solar cells  

SciTech Connect (OSTI)

The atomic structure and composition of grain boundaries in CdCl2 treated CdTe solar cells have been determined with aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy. A high fraction of Te in the grain boundary regions has been substituted by Cl. Density functional calculations reveal the origin of such segregation levels, and further indicate the GBs are likely inverted to n-type, establishing local P-N junctions, which help to separate electron-hole carriers. The results are in good agreement with electron beam induced current observations of high collection efficiency at grain boundaries.

Li, Chen [ORNL] [ORNL; Wu, Yelong [University of Toledo] [University of Toledo; Poplawsky, Jonathan D [ORNL] [ORNL; Paudel, Naba [University of Toledo] [University of Toledo; Yin, Wanjian [University of Toledo] [University of Toledo; Pennycook, Timothy [University of Oxford] [University of Oxford; Haigh, Sarah [University of Manchester, UK] [University of Manchester, UK; Oxley, Mark P [ORNL] [ORNL; Lupini, Andrew R [ORNL] [ORNL; Al-jassim, Mowafak [National Renewable Energy Laboratory (NREL)] [National Renewable Energy Laboratory (NREL); Pennycook, Stephen J [ORNL] [ORNL; Yan, Yanfa [University of Toledo] [University of Toledo

2014-01-01T23:59:59.000Z

436

PHOTOREFRACTIVE RESPONSE OF CdTe:V UNDER AC ELECTRIC FIELD FROM 1 TO 1.5m  

E-Print Network [OSTI]

for the extension of the photorefractive effect towards the wavelength region of 1.3-1.5µm. Cadmium Telluride (CdTe conduction (hole-electron competition). Sample and experimental set-up presentations : The CdTe sample we

437

Cadmium sulfate and CdTe-quantum dots alter DNA repair in zebrafish (Danio rerio) liver cells  

SciTech Connect (OSTI)

Increasing use of quantum dots (QDs) makes it necessary to evaluate their toxicological impacts on aquatic organisms, since their contamination of surface water is inevitable. This study compares the genotoxic effects of ionic Cd versus CdTe nanocrystals in zebrafish hepatocytes. After 24 h of CdSO{sub 4} or CdTe QD exposure, zebrafish liver (ZFL) cells showed a decreased number of viable cells, an accumulation of Cd, an increased formation of reactive oxygen species (ROS), and an induction of DNA strand breaks. Measured levels of stress defense and DNA repair genes were elevated in both cases. However, removal of bulky DNA adducts by nucleotide excision repair (NER) was inhibited with CdSO{sub 4} but not with CdTe QDs. The adverse effects caused by acute exposure of CdTe QDs might be mediated through differing mechanisms than those resulting from ionic cadmium toxicity, and studying the effects of metallic components may be not enough to explain QD toxicities in aquatic organisms. - Highlights: • Both CdSO{sub 4} and CdTe QDs lead to cell death and Cd accumulation. • Both CdSO{sub 4} and CdTe QDs induce cellular ROS generation and DNA strand breaks. • Both CdSO{sub 4} and CdTe QDs induce the expressions of stress defense and DNA repair genes. • NER repair capacity was inhibited with CdSO{sub 4} but not with CdTe QDs.

Tang, Song; Cai, Qingsong [The Institute of Environmental and Human Health, Texas Tech University, Lubbock, TX 79416 (United States); Chibli, Hicham [Department of Biomedical Engineering, McGill University, Montréal, QC H3A 2B4 (Canada); Allagadda, Vinay [The Institute of Environmental and Human Health, Texas Tech University, Lubbock, TX 79416 (United States); Nadeau, Jay L. [Department of Biomedical Engineering, McGill University, Montréal, QC H3A 2B4 (Canada); Mayer, Gregory D., E-mail: greg.mayer@ttu.edu [The Institute of Environmental and Human Health, Texas Tech University, Lubbock, TX 79416 (United States)

2013-10-15T23:59:59.000Z

438

Thermoelectric Properties of Nb3SbxTe7-x Compounds Sidney Wang, G. Jeff Snyder, and Thierry Caillat  

E-Print Network [OSTI]

of the resulting compounds. Introduction The search for more efficient thermoelectric materials has largely as a possible thermoelectric material by Jensen and Kjekshus, who predicted Nb3Sb2Te5 to be a semiconductor. In this study, the potential of Nb3Sb2Te5 as a thermoelectric material was examined via tests on Seebeck

439

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION ELECTRON MICROSCOPY  

E-Print Network [OSTI]

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION, A. N. Tiwari Thin Film Physics Group, Laboratory for Solid State Physics, Technopark ETH-Building, Technoparkstr. 1, CH-8005 Zurich, Switzerland ABSTRACT: CdTe/CdS thin £lm solar cells have been grown by closed

Romeo, Alessandro

440

OPTIMIZATION OF GRADED BAND GAP CdHgTe SOLAR CELLS A. BOUAZZI (*), Y. MARFAING and J. MIMILA-ARROYO  

E-Print Network [OSTI]

145 OPTIMIZATION OF GRADED BAND GAP CdHgTe SOLAR CELLS A. BOUAZZI (*), Y. MARFAING and J. MIMILA and an n-type CdHgTe alloy of uniform band gap as the base region. The optimization of solar energy conversion is conducted with respect to two constitutive para- meters : the gradient of the band gap

Boyer, Edmond

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Search for resonances in the dijet mass spectrum from 7 TeV pp collisions at CMS  

E-Print Network [OSTI]

A search for narrow resonances with a mass of at least 1 TeV in the dijet mass spectrum is performed using pp collisions at ?s = 7 TeV corresponding to an integrated luminosity of 1 fb[superscript ?1], collected by the CMS ...

CMS Collaboration

442

Mechanically-exfoliated stacks of thin films of Bi2Te3 topological insulators with enhanced thermoelectric performance  

E-Print Network [OSTI]

Mechanically-exfoliated stacks of thin films of Bi2Te3 topological insulators with enhanced; published online 1 October 2010 The authors report on "graphene-like" mechanical exfoliation of single can be used to mechanically exfoliate the ultrathin films of Bi2Te3 with the thickness down

443

Sonochemical and hydrothermal synthesis of PbTe nanostructures with the aid of a novel capping agent  

SciTech Connect (OSTI)

Graphical abstract: - Highlights: • PbTe nanostructures were prepared with the aid of Schiff-base compound. • Sonochemical and hydrothermal methods were employed to fabricate PbTe nanostrucrues. • The effect of preparation parameters on the morphology of PbTe was investigated. - Abstract: In this work, a new Schiff-base compound derived from 1,8-diamino-3,6-dioxaoctane and 2-hydroxy-1-naphthaldehyde marked as (2-HyNa)-(DaDo) was synthesized, characterized, and then used as capping agent for the preparation of PbTe nanostructures. To fabricate PbTe nanostructures, two different synthesis methods; hydrothermal and sonochemical routes, were applied. To further investigate, the effect of preparation parameters like reaction time and temperature in hydrothermal synthesis and sonication time in the presence of ultrasound irradiation on the morphology and purity of the final products was tested. The products were analyzed with the aid of SEM, TEM, XRD, FT-IR, and EDS. Based on the obtained results, it was found that pure cubic phased PbTe nanostructures have been obtained by hydrothermal and sonochemical approaches. Besides, SEM images showed that cubic-like and rod-like PbTe nanostructures have been formed by hydrothermal and sonochemical methods, respectively. Sonochemical synthesis of PbTe nanostructures was favorable, because the synthesis time of sonochemical method was shorter than that of hydrothermal method.

Fard-Fini, Shahla Ahmadian [Department of Chemistry, Payame Noor University, P.O. Box 19395-3697, Tehran, Islamic Republic of Iran (Iran, Islamic Republic of); Salavati-Niasari, Masoud, E-mail: salavati@kashanu.ac.ir [Department of Inorganic Chemistry, Faculty of Chemistry, University of Kashan, P.O. Box 87317-51167, Kashan, Islamic Republic of Iran (Iran, Islamic Republic of); Institute of Nano Science and Nano Technology, University of Kashan, P.O. Box 87317-51167, Kashan, Islamic Republic of Iran (Iran, Islamic Republic of); Mohandes, Fatemeh [Department of Inorganic Chemistry, Faculty of Chemistry, University of Kashan, P.O. Box 87317-51167, Kashan, Islamic Republic of Iran (Iran, Islamic Republic of)

2013-10-15T23:59:59.000Z

444

Open-circuit voltage, fill factor, and efficiency of a CdS/CdTe solar cell  

SciTech Connect (OSTI)

The dependences of the open-circuit voltage, fill factor, and efficiency of the thin-film CdS/CdTe solar cell on the resistivity {rho} and carrier lifetime {tau} in the absorbing CdTe layer were studied. In the common case in which the uncompensated acceptor concentration and the electron lifetime in the CdTe layer are within 10{sup 15}-10{sup 16} cm{sup -3} and 10{sup -10}-10{sup -9} s, the calculation results correspond to the achieved efficiency of the best thin-film CdS/CdTe solar cells. It was shown that, by decreasing {rho} and increasing {tau} in the absorbing CdTe layer, the open-circuit voltage, fill factor, and efficiency can be substantially increased, with their values approaching the theoretical limit for such devices.

Kosyachenko, L. A., E-mail: lakos@chv.ukrpack.net; Grushko, E. V. [Yuriy Fedkovych Chernivtsi National University (Ukraine)

2010-10-15T23:59:59.000Z

445

The reversal of the laser-beam-induced-current contrast with varying illumination density in a Cu{sub 2}ZnSnSe{sub 4} thin-film solar cell  

SciTech Connect (OSTI)

We apply an array of correlated spatially-resolved techniques, including ?-Raman/photoluminescence/reflectance/laser-beam-induced-current in conjunction with scanning electron microscopy and atomic force microscopy, to study the impact of the microscopic-scale thickness inhomogeneity of CdS layer in a Cu{sub 2}ZnSnSe{sub 4} thin-film solar cell. Thicker CdS regions are found to cause more light reflecting loss thus yield lower external quantum efficiencies and energy conversion efficiencies than the general area. However, these regions show much less efficiency degradation at high illumination intensity, leading to an inversion of laser-beam-induced-current contrast in the area mapping. While improving the CdS layer uniformity can boost the device performance, the finding further points out the possibility of operating thin-film photovoltaic devices based on the similar materials (such as CuInGaSe{sub 2}, CdTe, Cu{sub 2}ZnSn(S,Se){sub 4}) under a substantially higher illumination density for concentrated photovoltaic and photo-detection.

Chen, Qiong; Zhang, Yong, E-mail: yong.zhang@uncc.edu [Department of Electrical and Computer Engineering, and Energy Production and Infrastructure Center (EPIC), The University of North Carolina at Charlotte, Charlotte, North Carolina 28223 (United States)] [Department of Electrical and Computer Engineering, and Energy Production and Infrastructure Center (EPIC), The University of North Carolina at Charlotte, Charlotte, North Carolina 28223 (United States)

2013-12-09T23:59:59.000Z

446

MATERIALS FOR SOLAR PHOTOCELLS : PLACE OF CdTe Laboratoire de Physique des Solides C. N. R. S., 1, place Aristide-Briand, 92190 Meudon, France  

E-Print Network [OSTI]

MATERIALS FOR SOLAR PHOTOCELLS : PLACE OF CdTe M. RODOT Laboratoire de Physique des Solides C. N. R général, puis appliqués à CdTe. On montre que CdTe est l'un des matériaux les plus prometteurs. Une revue des cellules au CdTe doivent encore être obtenues. Abstract. 2014 The choice of the best materials

Paris-Sud XI, Université de

447

Ultrathin Topological Insulator Bi2Se3 Nanoribbons Exfoliated by Atomic Force  

E-Print Network [OSTI]

Ultrathin Topological Insulator Bi2Se3 Nanoribbons Exfoliated by Atomic Force Microscopy Seung Sae, Stanford University, Stanford, California 94305 ABSTRACT Ultrathin topological insulator nanostructures), the layered bismuth selenide (Bi2Se3), a single Dirac-cone topological insulator with a large bulk gap, can

Cui, Yi

448

Kandidatexjobb inom fysik Bjrn Cederstrm, bjorn@mi.physics.kth.se  

E-Print Network [OSTI]

Kandidatexjobb inom fysik VT 2014 Björn Cederström, bjorn@mi.physics.kth.se (avgående kontaktpersonGoLite project #12;Tack! Mer information: http://www.mi.physics.kth.se/web/teaching_kand_exjobb.htm 2013-09-25 12

Haviland, David

449

Hybrid Electrochromic Fluorescent Poly(DNTD)/CdSe@ZnS Composite Films  

E-Print Network [OSTI]

Hybrid Electrochromic Fluorescent Poly(DNTD)/CdSe@ZnS Composite Films Huige Wei, Xingru Yan, Springdale, Arkansas 72764, United States ABSTRACT: Hybrid electrochromic poly(DNTD)/CdSe@ZnS quantum dots of an electrical current after the application of an appropriate electrode potential.15-17 The electrochromic

Guo, John Zhanhu

450

Testing models for the Messinian salinity crisis: The Messinian record in Almera, SE Spain  

E-Print Network [OSTI]

Testing models for the Messinian salinity crisis: The Messinian record in Almería, SE Spain Juan C Fuentenueva s.n., Universidad de Granada, 18002 Granada, Spain b School of Earth, Ocean and Planetary Sciences, SE Spain, display excellent exposures of Messinian (Late Miocene) sequences. The Sorbas, Almería

Riding, Robert

451

Rapid degradation of CdSe/ZnS colloidal quantum dots exposed to gamma irradiation  

E-Print Network [OSTI]

- grade their optical properties. In this paper, we report on the effects of gamma irradiationRapid degradation of CdSe/ZnS colloidal quantum dots exposed to gamma irradiation Nathan J. Withers of 137 Cs gamma irradiation on photoluminescent properties of CdSe/ZnS colloidal quantum dots

New Mexico, University of

452

Tunable White-Light-Emitting Mn-Doped ZnSe Nanocrystals Vijay Kumar Sharma,  

E-Print Network [OSTI]

Tunable White-Light-Emitting Mn-Doped ZnSe Nanocrystals Vijay Kumar Sharma, Burak Guzelturk, Talha report white-light-emitting Mn-doped ZnSe nanocrystals (NCs) that are synthesized using modified orange emission (580 nm), allowed us to achieve excitation wavelength tailorable white-light generation

Demir, Hilmi Volkan

453

Superconductivity in Strong Spin Orbital Coupling Compound Sb2Se3  

E-Print Network [OSTI]

Superconductivity in Strong Spin Orbital Coupling Compound Sb2Se3 P. P. Kong1 , F. Sun1,3 , L. Y induce Sb2Se3 into a topological nontrivial state. Here, we report on the discovery of superconductivity superconductive at high pressures above 10 GPa proceeded by a pressure induced insulator to metal like transition

Shen, Guoyin

454

Photovoltaic cells fabricated by electrophoretic deposition of CdSe nanocrystals  

E-Print Network [OSTI]

Photovoltaic cells fabricated by electrophoretic deposition of CdSe nanocrystals Nathanael J. Smith Electrophoretic deposition was used to deposit CdSe nanocrystals on TiO2 for use in photovoltaic cells formed. A solar cell constructed using electrophoretic deposition exhibited a photovoltaic response from

Smith, Nathanael J.

455

Development of a Low Cost Insulated Foil Substrate for Cu(InGaSe)2 Photovoltaics  

SciTech Connect (OSTI)

The project validated the use of stainless steel flexible substrate coated with silicone-based resin dielectric, developed by Dow Corning Corporation, for Cu(InGa)Se2 based photovoltaics. The projects driving force was the high performance of Cu(InGa)Se2 based photovoltaics coupled with potential cost reduction that could be achieved with dielectric coated SS web substrate.

ERTEN ESER

2012-01-22T23:59:59.000Z

456

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se2 Thin Films  

E-Print Network [OSTI]

state with an ionization energy of ~16 meV is proposed to be a transition into band tail states rather resource concerns have spurred interest in renewable energy technologies, particularly in the area identified between defect spectra of CuInSe2 and CuGaSe2 ­ the transition energies are different

Rockett, Angus

457

Using SeDuMi 1.02, a MATLAB toolbox for optimization over symmetric cones  

E-Print Network [OSTI]

SeDuMi is an add-on for MATLAB, that lets you solve optimization problems with linear, quadratic and semidefiniteness constraints. It is possible to have complex valued data and variables in SeDuMi. Moreover, large scale optimization problems are solved efficiently, by exploiting sparsity. This paper describes how to work with this toolbox.

Jos F. Sturm

1998-01-01T23:59:59.000Z

458

SE HAN FINALIZADO LOS PREPARATIVOS PARA LA CONFERENCIA NACIONAL DE JUSTICIA MEDIOAMBIENTAL Y PROGRAMA DE FORMACIÓN 2013  

Broader source: Energy.gov [DOE]

La National Environmental Justice Conference, Inc. (Conferencia de Justicia Medioambiental) se prepara para otro exitoso acontecimiento, ya que se aproxima la Conferencia Nacional de Justicia...

459

HOMOGENEITY ALONG Cl-COMPENSATED THM GROWN CdTe INGOT NGO-TICH-PHUOC, G. M. MARTIN, C. BELIN and E. FABRE  

E-Print Network [OSTI]

195 HOMOGENEITY ALONG Cl-COMPENSATED THM GROWN CdTe INGOT NGO-TICH-PHUOC, G. M. MARTIN, C. BELIN resistivity CdTe is believed to present some potentialities as a material for y-rays detection at room carried out [8-9]. This paper presents an assessment of Cl-compen- sated, THM grown CdTe ingots : emphasis

Paris-Sud XI, Université de

460

THE RELATIONSHIP OF CdS/CdTe CELL BAND PROFILES TO J-V CHARACTERISTICS AND BIAS-DEPENDENT QUANTUM EFFICIENCY  

E-Print Network [OSTI]

-over, and, in some cases, long J-V and capacitance transient effects. CdTe is highly compensated containing by charge in the bulk CdTe within the absorber. PATHWAYS TO INCREASED EFFICIENCY There are several general to realize in practice. One pathway is by increasing the net negative charge in the CdTe by "p-type doping

Sites, James R.

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Diffusion of Cd vacancy and interstitials of Cd, Cu, Ag, Au and Mo in CdTe: A first principles investigation  

E-Print Network [OSTI]

Diffusion of Cd vacancy and interstitials of Cd, Cu, Ag, Au and Mo in CdTe: A first principles, Au, and Mo in bulk CdTe. The high symmetry Wyckoff position 4(b) is the global minimum energy enhanced the commercial viability of solar cells to generate electricity. Among them, cadmium telluride (CdTe

Khare, Sanjay V.

462

Investigation of the evolution of single domain ,,111...B CdTe films by molecular beam epitaxy on miscut ,,001...Si substrate  

E-Print Network [OSTI]

Investigation of the evolution of single domain ,,111...B CdTe films by molecular beam epitaxy; accepted for publication 22 July 1998 A comprehensive view of the microstructure of 111 B CdTe films grown and scanning transmission electron microscopy. It is found that in the initial growth stage, CdTe nucleates

Pennycook, Steve

463

TeV GAMMA-RAY SURVEY OF THE NORTHERN HEMISPHERE SKY USING THE MILAGRO OBSERVATORY R. Atkins,1,2  

E-Print Network [OSTI]

to search the entire northern hemisphere for such objects. The search for short bursts of TeV gamma rays hasTeV GAMMA-RAY SURVEY OF THE NORTHERN HEMISPHERE SKY USING THE MILAGRO OBSERVATORY R. Atkins,1,2 W) are presented. The data have been searched for steady point sources of TeV gamma rays between declinations of 1

California at Santa Cruz, University of

464

Ann bay lodyans 14 / Se Bryant Freeman ("Tonton Liben") ki pare ti liv sa a  

E-Print Network [OSTI]

chante. A! chwal pati, men krapo pi vif pase I. Li bondi al tache nan gwo ke chwal la. F6 nou te we chwal kouri tout boulin. Li voltije ni rigol ni lantiray. Le li bouke, li fe yon ti rete. 10 Men, tou dousman, krapo fe yon ti "ef-6f." Chwal sezi... chwal, fe yon ti "ef-df" anko. Chwal rele: "Sa pa posib!" Epi li komanse galope vites boulin pou I ka rive pi vit. Nan yon ti moman, li paret nan bouk la. Men kay Melani. Chwal rele: "Cheri! cheri!" Yo tande vwa li. Tout moun vini pou yo ka resevwa...

Freeman, Bryant C.

2000-01-01T23:59:59.000Z

465

Magnetic and electrical properties of layered magnets Tl(Cr,Mn,Co)Se{sub 2}  

SciTech Connect (OSTI)

Tl(Cr,Mn,Co)Se{sub 2} crystals were synthesized at T {approx} 1050 K. X-ray diffraction analysis showed that TlCrSe{sub 2}, TlMnSe{sub 2}, and TlCoSe{sub 2} compounds crystallize in the hexagonal crystal system with the lattice parameters: a = 3.6999 A, c = 22.6901 A, c/a {approx} 6.133, z = 3, {rho}{sub x} = 6.209 g/cm{sup 3}; a = 6.53 A, c = 23.96 A, c/a {approx} 3.669, z = 8, {rho}{sub x} = 6.71 g/cm{sup 3}; and a = 3.747 A, c = 22.772 A, c/a {approx} 6.077, z = 3, {rho}{sub x} = 7.577 g/cm{sup 3}, respectively. Magnetic and electrical studies in the temperature range from 80-400 K showed that TlCrSe{sub 2} is a semiconductor ferromagnet, TlMnSe{sub 2} is a semiconductor antiferromagnet, and TlCoSe{sub 2} is a ferrimagnet with a conductivity characteristic of metals. A rather large deviation in the experimental effective magnetic moment for TlCrSe{sub 2} (3.05 {mu}B) from the theoretical value (3.85 {mu}B) is attributed to two-dimensional magnetic ordering in the paramagnetic region of the noticeably layered ferromagnet TlCrSe{sub 2}. In TlCrSe{sub 2}, a correlation between magnetic and electrical properties was detected.

Veliyev, R. G.; Sadikhov, R. Z.; Kerimova, E. M., E-mail: ekerimova@physics.ab.az; Asadov, Yu. G.; Jabbarov, A. I. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

2009-02-15T23:59:59.000Z

466

Phase equilibria in the quasi-ternary system Ag{sub 2}Se–Ga{sub 2}Se{sub 3}–In{sub 2}Se{sub 3} and physical properties of (Ga{sub 0.6}In{sub 0.4}){sub 2}Se{sub 3}, (Ga{sub 0.594}In{sub 0.396}Er{sub 0.01}){sub 2}Se{sub 3} single crystals  

SciTech Connect (OSTI)

The quasi-ternary system Ag{sub 2}Se–Ga{sub 2}Se{sub 3}–In{sub 2}Se{sub 3} was investigated by differential thermal, X-ray phase, X-ray structure, microstructure analysis and microhardness measurements. Five quasi-binary phase diagrams, six polythermal sections, isothermal section at 820 K and the liquidus surface projection were constructed. The character and temperature of the invariant processes were determined. The specific resistance of the single crystals (Ga{sub 0.6}In{sub 0.4}){sub 2}Se{sub 3}, (Ga{sub 0.594}In{sub 0.396}Er{sub 0.01}){sub 2}Se{sub 3} was measured, 7.5×10{sup 5} and 3.15×10{sup 5} ? m, respectively, optical absorption spectra in the 600–1050 nm range were recorded at room temperature, and the band gap energy was estimated which is 1.95±0. 01 eV for both samples. - Graphical abstract: The article reports for the first time the investigated liquidus surface projection of the Ag{sub 2}Se–Ga{sub 2}Se{sub 3}–In{sub 2}Se{sub 3} system and isothermal section at 820 K of the system. Five phase diagrams, six polythermal sections, isothermal section at 820 K and the liquidus surface projection were built at the first time. The existence of the large region of the solid solutions based on AgIn{sub 5}Se{sub 8}, Ga{sub 2}Se{sub 3} and AgGa{sub 1?x}In{sub x}Se{sub 2} was investigated. The existence of two ternary phases was established in the Ga{sub 2}Se{sub 3}–In{sub 2}Se{sub 3} system. Two single crystals (Ga{sub 0.6}In{sub 0.4}){sub 2}Se{sub 3}, (Ga{sub 0.594}In{sub 0.396}Er{sub 0.01}){sub 2}Se{sub 3} were grown and some of optical properties of them were studied at first time. Display Omitted - Highlights: • Liquidus surface projection was built for Ag{sub 2}Se–Ga{sub 2}Se{sub 3}–In{sub 2}Se{sub 3} system. • Solid solution ranges of AgIn{sub 5}Se{sub 8}, Ga{sub 2}Se{sub 3} and AgGa{sub 1?x}In{sub x}Se{sub 2} were investigated. • Two single crystals (Ga{sub 0.6}In{sub 0.4}){sub 2}Se{sub 3}, (Ga{sub 0.594}In{sub 0.396}Er{sub 0.01}){sub 2}Se{sub 3} were grown. • Some optical properties of these single crystals were studied.

Ivashchenko, I.A., E-mail: inna.ivashchenko@mail.ru [Department of Inorganic and Physical Chemistry, Eastern European National University, Voli Ave 13, Lutsk 43025 (Ukraine); Danyliuk, I.V.; Olekseyuk, I.D. [Department of Inorganic and Physical Chemistry, Eastern European National University, Voli Ave 13, Lutsk 43025 (Ukraine); Halyan, V.V. [Department of General Physics, Eastern European National University, Voli Ave 13, Lutsk 43025 (Ukraine)

2014-02-15T23:59:59.000Z

467

Upsilon production cross section in pp collisions at ?s=7??TeV  

E-Print Network [OSTI]

The ?(1S), ?(2S), and ?(3S) production cross sections in proton-proton collisions at ?s=7??TeV are measured using a data sample collected with the CMS detector at the LHC, corresponding to an integrated luminosity of ...

Paus, Christoph M E

2011-10-05T23:59:59.000Z

468

Superconductivity in Topological Insulator Sb2Te3 Induced by Pressure  

E-Print Network [OSTI]

Superconductivity in Topological Insulator Sb2Te3 Induced by Pressure J. Zhu1 *, J. L. Zhang1 *, P superconductivity and topology nature. A s new states of quantum matter, topological insulators are characterized to topological insulators, topological superconductors are expected to have a full pairing gap in the bulk

Wang, Wei Hua

469

EXAFS Studies of Ga Doped Pb1-xMnxTe  

SciTech Connect (OSTI)

We have employed the X-Rays Absorption Fine Structure (EXAFS) technique to resolve the local structure of Pb1-xMnxTe (Ga) in order to provide answers on questions concerning the exact positions and charge states of constitutive and impurity atoms, possibilities and features of their ordering and (or) clustering, as well as configurational and thermal disorder in the system.

Radisavljevic, I.; Ivanovic, N.; Novakovic, N. [Vinca- Institute of Nuclear Sciences, POB 522, 11001 Belgrade (Serbia and Montenegro); Romcevic, N. [Institute of Physics, Pregrevica 118, 11000 Belgrade (Serbia and Montenegro); Mahnke, H.-E. [Bereich Strukturforschung, Hahn-Meitner-Institut Berlin GmbH, D-14109 Berlin (Germany)

2007-04-23T23:59:59.000Z

470

REVIEW OF OPTICAL APPLICATIONS OF CdTe Mobil Tyco Solar Energy Corporation 16 Hickory Drive  

E-Print Network [OSTI]

REVIEW OF OPTICAL APPLICATIONS OF CdTe R. O. BELL Mobil Tyco Solar Energy Corporation 16 Hickory of optical applications. These include electrooptic modulation, high power laser windows, electroluminescence will be paid to the various optical absorption mechanisms and the effects of impurities on the optical behavior

Paris-Sud XI, Université de

471

Investigation of deep level defects in CdTe thin films  

SciTech Connect (OSTI)

In the past few years, a large body of work has been dedicated to CdTe thin film semiconductors, as the electronic and optical properties of CdTe nanostructures make them desirable for photovoltaic applications. The performance of semiconductor devices is greatly influenced by the deep levels. Knowledge of parameters of deep levels present in as-grown materials and the identification of their origin is the key factor in the development of photovoltaic device performance. Photo Induced Current Transient Spectroscopy technique (PICTS) has proven to be a very powerful method for the study of deep levels enabling us to identify the type of traps, their activation energy and apparent capture cross section. In the present work, we report the effect of growth parameters and LASER irradiation intensity on the photo-electric and transport properties of CdTe thin films prepared by Close-Space Sublimation method using SiC electrical heating element. CdTe thin films were grown at three different source temperatures (630, 650 and 700 °C). The grown films were irradiated with Nd:YAG LASER and characterized by Photo-Induced Current Transient Spectroscopy, Photocurrent measurementand Current Voltage measurements. The defect levels are found to be significantly influenced by the growth temperature.

Shankar, H.; Castaldini, A. [Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy); Dieguez, E.; Rubio, S. [Crystal Growth Lab, Department of Materials Physics, Faculty of Science, University Autonoma of Madrid, Ciudad Universitaria de Cantoblanco, 28049, Madrid (Spain); Dauksta, E.; Medvid, A. [Institute of Technical Physics, Riga Technical University, 14 Azenes Str, Riga, Latvia, Department of Materials (Latvia); Cavallini, A. [Department of Physics and Astronomy,University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy)

2014-02-21T23:59:59.000Z

472

Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices: Preprint  

SciTech Connect (OSTI)

We discuss typical and alternative procedures to analyze time-resolved photoluminescence (TRPL) measurements of minority carrier lifetime (MCL) with the hope of enhancing our understanding of how this technique may be used to better analyze CdTe photovoltaic (PV) device functionality. Historically, TRPL measurements of the fast recombination rate (t1) have provided insightful correlation with broad device functionality. However, we have more recently found that t1 does not correlate as well with smaller changes in device performance, nor does it correlate well with performance differences observed between superstrate and substrate CdTe PV devices. This study presents TRPL data for both superstrate and substrate CdTe devices where both t1 and the slower TRPL decay (t2) are analyzed. The study shows that changes in performance expected from small changes in device processing may correlate better with t2. Numerical modeling further suggests that, for devices that are expected to have similar drift field in the depletion region, effects of changes in bulk MCL and interface recombination should be more pronounced in t2. Although this technique may provide future guidance to improving CdS/CdTe device performance, it is often difficult to extract statistically precise values for t2, and therefore t2 data may demonstrate significant scatter when correlated with performance parameters.

Gessert, T. A.; Dhere, R. G.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Bergeson, J. D.

2011-07-01T23:59:59.000Z

473

Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices  

SciTech Connect (OSTI)

We discuss typical and alternative procedures to analyze time-resolved photoluminescence (TRPL) measurements of minority carrier lifetime (MCL) with the hope of enhancing our understanding of how this technique may be used to better analyze CdTe photovoltaic (PV) device functionality. Historically, TRPL measurements of the fast recombination rate (t{sub 1}) have provided insightful correlation with broad device functionality. However, we have more recently found that t{sub 1} does not correlate as well with smaller changes in device performance, nor does it correlate well with performance differences observed between superstrate and substrate CdTe PV devices. This study presents TRPL data for both superstrate and substrate CdTe devices where both t{sub 1} and the slower TRPL decay (t{sub 2}) are analyzed. The study shows that changes in performance expected from small changes in device processing may correlate better with t{sub 2}. Numerical modeling further suggests that, for devices that are expected to have similar drift field in the depletion region, effects of changes in bulk MCL and interface recombination should be more pronounced in t{sub 2}. Although this technique may provide future guidance to improving CdS/CdTe device performance, it is often difficult to extract statistically precise values for t{sub 2}, and therefore t{sub 2} data may demonstrate significant scatter when correlated with performance parameters.

Gessert, T. A.; Dhere, R. G.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Bergeson, J. D.

2011-01-01T23:59:59.000Z

474

Nanoassembly control and optical absorption in CdTe-ZnO nanocomposite thin films  

SciTech Connect (OSTI)

The spatial distribution of CdTe nanoparticles within a ZnO thin-film matrix was manipulated using a dual-source, sequential radio-frequency (RF)-sputter deposition technique to produce nanocomposite materials with tuned spectral absorption characteristics. The relative substrate exposure time to each sputtering source was used to control the semiconductor phase connectivity, both within the film plane and along the film growth direction, to influence the degree of photocarrier confinement and the resulting optical transition energies exhibited by the CdTe phase. Significant changes (up to {Delta}E {approx_equal} 0.3 eV) in the absorption onset energy for the CdTe nanoparticle ensemble were produced through modification in the extended structure of the semiconductor phase. Raman spectroscopy, cross-sectional transmission electron microscopy, and x-ray diffraction were used to confirm the phase identity of the CdTe and ZnO and to characterize the nanostructures produced in these composite films. Isochronal annealing for 5 min at temperatures up to 800 deg. C further indicated the potential to improve film crystallinity as well as to establish the post-deposition thermal processing limits of stability for the semiconductor phase. The study highlights the significance of ensemble behavior as a means to influence quantum-scale semiconductor optical characteristics of import to the use of such materials as the basis for a variety of optoelectronic devices, including photosensitized heterojunction components in thin film photovoltaics.

Potter, B. G. Jr. [Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85721 (United States); College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States); Beal, R. J.; Allen, C. G. [Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85721 (United States)

2012-02-01T23:59:59.000Z

475

OpTeC Annual Meeting Agenda 1 11 Sept. 2014 Optical Science & Engineering Conference  

E-Print Network [OSTI]

Devices for Polarization Control 9:05 am Tianbo Liu & David Dickensheets MSU Electrical and Computer in an SOFC #12;OpTeC Annual Meeting Agenda 2 11 Sept. 2014 9:40 am Alexander Mikhaylov,a Lauren Bennett

Maxwell, Bruce D.

476

Search for Three-Jet Resonances in pp Collisions at ?s=7??TeV  

E-Print Network [OSTI]

A search for three-jet hadronic resonance production in pp collisions at a center-of-mass energy of 7 TeV has been conducted by the CMS Collaboration at the LHC, using a data sample corresponding to an integrated luminosity ...

Bauer, Gerry P.

477

Search for anomalous production of multilepton events in pp collisions at ?s = 7 TeV  

E-Print Network [OSTI]

A search for anomalous production of events with three or more isolated leptons in pp collisions at ?s = 7 TeV is presented. The data, corresponding to an integrated luminosity of 4.98 fb[superscript ?1], were collected ...

Bauer, Gerry P.

478

Enhanced Thermoelectric Properties of Solution Grown Bi2Te3-xSex Nanoplatelet Composites  

E-Print Network [OSTI]

is the lattice contributions) and T is average absolute temperature. An ideal thermoelectric material on the efficiency of thermoelectric materials, and hence a decoupling of these parameters is required to improveEnhanced Thermoelectric Properties of Solution Grown Bi2Te3-xSex Nanoplatelet Composites Ajay Soni

Xiong, Qihua

479

OG 2.1.11 1 Milagrito Detection of TeV Emission from Mrk 501  

E-Print Network [OSTI]

detector near Los Alamos, New Mexico, has been operated as a sky monitor at energies of a few TeV between: With the detection of 4 Galactic and 3 extragalatic sources, Very High Energy (VHE) fl­ray astronomy, studying the sky at energies above 100 GeV, has become one of the most interesting frontiers in astronomy. Source

California at Santa Cruz, University of

480

SCIPP 99/12 Study of Active Galactic Nuclei at TeV Energies  

E-Print Network [OSTI]

SCIPP 99/12 March 1999 Study of Active Galactic Nuclei at TeV Energies with Milagrito S. Westerhoff of California, Irvine, CA 92697, USA (6) George Mason University, Fairfax, VA 22030, USA (7) University of New Hampshire, Durham, NH 03824, USA (8) New York University, New York, NY 10003, USA (9) Los Alamos National

California at Santa Cruz, University of

Note: This page contains sample records for the topic "uup se te" from the National Library of EnergyBeta (NLEBeta).
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481

Direct Observation of Room-Temperature Polar Ordering in Colloidal GeTe Nanocrystals  

E-Print Network [OSTI]

99.997 %), 1-dodecanethiol (1-DDT, > 98 %), anhydrous 1,2Then, 0.03 g of dried 1-DDT was mixed with 1.5 mL of a 10stirring, and the 1-DDT/TOP-Te solution was immediately

Polking, Mark J.

2010-01-01T23:59:59.000Z

482

Discovery of TeV Gamma-Ray Emission from the Cygnus Region of the Galaxy  

E-Print Network [OSTI]

The diffuse gamma radiation arising from the interaction of cosmic ray particles with matter and radiation in the Galaxy is one of the few probes available to study the origin of the cosmic rays. Milagro is a water Cherenkov detector that continuously views the entire overhead sky. The large field-of-view combined with the long observation time makes Milagro the most sensitive instrument available for the study of large, low surface brightness sources such as the diffuse gamma radiation arising from interactions of cosmic radiation with interstellar matter. In this paper we present spatial and flux measurements of TeV gamma-ray emission from the Cygnus Region. The TeV image shows at least one new source MGRO J2019+37 as well as correlations with the matter density in the region as would be expected from cosmic-ray proton interactions. However, the TeV gamma-ray flux as measured at ~12 TeV from the Cygnus region (after excluding MGRO J2019+37) exceeds that predicted from a conventional model of cosmic ray prod...

Abdo, A A; Berley, D; Blaufuss, E; Casanova, S; Chen, C; Coyne, D G; Delay, R S; Dingus, B L; Ellsworth, R W; Fleysher, L; Fleysher, R; González, M M; Goodman, J A; Hays, E; Hoffman, C M; Kolterman, B E; Kelley, L A; Lansdell, C P; Linnemann, J T; McEnery, J E; Mincer, A I; Moskalenko, I V; Némethy, P; Noyes, D; Ryan, J M; Samuelson, F W; Parkinson, P M S; Schneider, M; Shoup, A; Sinnis, G; Smith, A J; Strong, A W; Sullivan, G W; Vasileiou, V; Walker, G P; Williams, D A; Xu, X W; Yodh, G B

2006-01-01T23:59:59.000Z

483

Detection of TeV Gamma-Rays from extended sources with Milagro  

E-Print Network [OSTI]

The Milagro gamma-ray observatory employs a water Cherenkov detector to observe extensive air showers produced by high-energy particles impacting in the Earth's atmosphere. A 4800 m$^{2}$ pond instrumented with 723 8" PMTs detects Cherenkov light produced by secondary air-shower particles. An array of 175 4000 liter water tanks surrounding the central pond detector was recently added, extending the physical area of the Milagro observatory to 40,000 m$^{2}$ and substantially increasing the sensitivity of the detector. Because of its wide field of view and high duty cycle, Milagro is ideal for monitoring the northern sky almost continuously ($>$90% duty cycle) in the 100 GeV to 100 TeV energy range. Here we discuss the first detection of TeV gamma-rays from the inner Galactic plane region. We also report the detection of an extended TeV source coincident with the EGRET source 3EG J0520+2556, as well as the observation of extended TeV emission from the Cygnus region of the Galactic plane.

Parkinson, P M S; Atkins, R; Benbow, W; Berley, D; Blaufuss, E; Coyne, D G; De Young, T R; Dingus, B L; Dorfan, D E; Ellsworth, R W; Fleysher, L; Gisler, G; González, M M; Goodman, J A; Haines, T J; Hays, E; Hoffman, C M; Kelley, L A; Lansdell, C P; Linnemann, J T; McEnery, J E; Miller, R S; Mincer, A I; Morales, M F; Némethy, P; Noyes, D; Ryan, J M; Samuelson, F W; Saz-Parkinson, P M; Shoup, A; Sinnis, G; Smith, A J; Sullivan, G W; Williams, D A; Wilson, M E; Xu, X W; Yodh, G B

2005-01-01T23:59:59.000Z

484

Rational Synthesis of Ultrathin n-Type Bi2Te3 Nanowires with Enhanced Thermoelectric Properties  

E-Print Network [OSTI]

, which can generate electricity by recovering waste heat or be used as solid-state cooling devices, have-based thermoelectric power generation and solid-state cooling devices with superior performance in a reliableRational Synthesis of Ultrathin n-Type Bi2Te3 Nanowires with Enhanced Thermoelectric Properties

Xu, Xianfan

485

Expectations for neutron-antineutron oscillation time from TeV scale baryogenesis  

SciTech Connect (OSTI)

A TeV scale extension of the standard model that incorporates the seesaw mechanism for neutrino masses along with quark-lepton unification is presented. It is shown that this model leads to the {Delta}B= 2 baryon number violating process of neutron-antineutron (n-bar n) oscillation. The model has all the ingredients to generate the observed baryon asymmetry of the universe using the B-violating decay of a scalar field involved in the seesaw mechanism. The B-violating decay arises from the exchange of color sextet scalars which have TeV scale masses. Baryogenesis occurs below the sphaleron decoupling temperature and has been termed post-sphaleron baryogenesis. Here we show that the constraints of TeV scale baryogenesis, when combined with the neutrino oscillation data and restrictions from flavor changing neutral currents mediated by the colored scalars imply an upper limit on the n-bar n oscillation time of 5 Multiplication-Sign 10{sup 10} sec. regardless of the quark-lepton unification scale. If this scale is relatively low, in the (200 - 250) TeV range, {tau}{sub n-bar} {sub n} is predicted to be less than 10{sup 10} sec., which is accessible to the next generation of proposed experiments.

Babu, K. S. [Department of Physics, Oklahoma State University, Stillwater, OK 74078 (United States); Bhupal Dev, P. S. [Consortium for Fundamental Physics, School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL (United Kingdom); Fortes, Elaine C. F. S. [Instituto de Fisica Teorica-Universidade Estadual Paulista, R. Dr. Bento Teobaldo Ferraz 271, Sao Paulo-SP, 01140-070 (Brazil); Mohapatra, Rabindra N. [Maryland Center for Fundamental Physics and Department of Physics, University of Maryland, College Park, MD 20742 (United States)

2013-05-23T23:59:59.000Z

486

PyR@TE: Renormalization Group Equations for General Gauge Theories  

E-Print Network [OSTI]

Although the two-loop renormalization group equations for a general gauge field theory have been known for quite some time, deriving them for specific models has often been difficult in practice. This is mainly due to the fact that, albeit straightforward, the involved calculations are quite long, tedious and prone to error. The present work is an attempt to facilitate the practical use of the renormalization group equations in model building. To that end, we have developed two completely independent sets of programs written in Python and Mathematica, respectively. The Mathematica scripts will be part of an upcoming release of SARAH 4. The present article describes the collection of Python routines that we dubbed PyR@TE which is an acronym for "Python Renormalization group equations At Two-loop for Everyone". In PyR@TE, once the user specifies the gauge group and the particle content of the model, the routines automatically generate the full two-loop renormalization group equations for all (dimensionless and dimensionful) parameters. The results can optionally be exported to Latex and Mathematica, or stored in a Python data structure for further processing by other programs. For ease of use, we have implemented an interactive mode for PyR@TE in form of an IPython Notebook. As a first application, we have generated with PyR@TE the renormalization group equations for several non-supersymmetric extensions of the Standard Model and found some discrepancies with the existing literature.

Florian Lyonnet; Ingo Schienbein; Florian Staub; Akin Wingerter

2013-09-26T23:59:59.000Z

487

Search for Stopped Gluinos in pp Collisions at root s=7 TeV  

E-Print Network [OSTI]

The results of the first search for long-lived gluinos produced in 7 TeV pp collisions at the CERN Large Hadron Collider are presented. The search looks for evidence of long-lived particles that stop in the CMS detector ...

Alver, Burak Han

488

Les Houches 2013: Physics at TeV Colliders: Standard Model Working Group Report  

E-Print Network [OSTI]

This Report summarizes the proceedings of the 2013 Les Houches workshop on Physics at TeV Colliders. Session 1 dealt primarily with (1) the techniques for calculating standard model multi-leg NLO and NNLO QCD and NLO EW cross sections and (2) the comparison of those cross sections with LHC data from Run 1, and projections for future measurements in Run 2.

J. Butterworth; G. Dissertori; S. Dittmaier; D. de Florian; N. Glover; K. Hamilton; J. Huston; M. Kado; A. Korytov; F. Krauss; G. Soyez; J. R. Andersen; S. Badger; L. Barzè; J. Bellm; F. U. Bernlochner; A. Buckley; J. Butterworth; N. Chanon; M. Chiesa; A. Cooper-Sarkar; L. Cieri; G. Cullen; H. van Deurzen; G. Dissertori; S. Dittmaier; D. de Florian; S. Forte; R. Frederix; B. Fuks; J. Gao; M. V. Garzelli; T. Gehrmann; E. Gerwick; S. Gieseke; D. Gillberg; E. W. N. Glover; N. Greiner; K. Hamilton; T. Hapola; H. B. Hartanto; G. Heinrich; A. Huss; J. Huston; B. Jäger; M. Kado; A. Kardos; U. Klein; F. Krauss; A. Kruse; L. Lönnblad; G. Luisoni; Daniel Maître; P. Mastrolia; O. Mattelaer; J. Mazzitelli; E. Mirabella; P. Monni; G. Montagna; M. Moretti; P. Nadolsky; P. Nason; O. Nicrosini; C. Oleari; G. Ossola; S. Padhi; T. Peraro; F. Piccinini; S. Plätzer; S. Prestel; J. Pumplin; K. Rabbertz; Voica Radescu; L. Reina; C. Reuschle; J. Rojo; M. Schönherr; J. M. Smillie; J. F. von Soden-Fraunhofen; G. Soyez; R. Thorne; F. Tramontano; Z. Trocsanyi; D. Wackeroth; J. Winter; C-P. Yuan; V. Yundin; K. Zapp

2014-05-05T23:59:59.000Z

489

Results from Milagrito on TeV Emission by Active Galactic Nuclei  

E-Print Network [OSTI]

telescopes. INTRODUCTION Milagro is an experiment to study gamma­rays with energy near one TeV using a large water­Cherenkov detector. Very high­energy particles interacting in the atmosphere produce extensive air [4] used a man­made water reservoir, shown in Figure 1, in the Jemez Mountains of New Mexico

California at Santa Cruz, University of

490

14%-efficient flexible CdTe solar cells on ultra-thin glass substrates  

SciTech Connect (OSTI)

Flexible glass enables high-temperature, roll-to-roll processing of superstrate devices with higher photocurrents than flexible polymer foils because of its higher optical transmission. Using flexible glass in our high-temperature CdTe process, we achieved a certified record conversion efficiency of 14.05% for a flexible CdTe solar cell. Little has been reported on the flexibility of CdTe devices, so we investigated the effects of three different static bending conditions on device performance. We observed a consistent trend of increased short-circuit current and fill factor, whereas the open-circuit voltage consistently dropped. The quantum efficiency under the same static bend condition showed no change in the response. After storage in a flexed state for 24 h, there was very little change in device efficiency relative to its unflexed state. This indicates that flexible glass is a suitable replacement for rigid glass substrates, and that CdTe solar cells can tolerate bending without a decrease in device performance.

Rance, W. L.; Burst, J. M.; Reese, M. O.; Gessert, T. A.; Metzger, W. K.; Barnes, T. M. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Meysing, D. M.; Wolden, C. A. [Colorado School of Mines, Golden, Colorado 80401 (United States); Garner, S.; Cimo, P. [Corning Incorporated, Corning, New York 14831 (United States)

2014-04-07T23:59:59.000Z

491

The Drivetrain of Sustainability Powering innovation in Clean teCh  

E-Print Network [OSTI]

The Drivetrain of Sustainability Powering innovation in Clean teCh iNSiDe: BUSiNeSS OF HeALTH CARe energy use, generation and storage, as well as other necessities of life, environmentally responsible of Management, I hope to participate in what many expect to be the next big chapter of the California Dream

California at Davis, University of

492

High thermoelectric performance by resonant dopant indium in nanostructured SnTe  

E-Print Network [OSTI]

From an environmental perspective, lead-free SnTe would be preferable for solid-state waste heat recovery if its thermoelectric figure-of-merit could be brought close to that of the lead-containing chalcogenides. In this ...

Liao, Bolin

493

Study of forward Z + jet production in pp collisions at ?s = 7 TeV  

E-Print Network [OSTI]

A measurement of the Z(? ? [superscript +] ? [superscript ?]) + jet production cross-section in pp collisions at a centre-of-mass energy ?s = 7 TeV is presented. The analysis is based on an integrated luminosity of 1.0 ...

Williams, Michael

494

Charge-carrier transport and recombination in heteroepitaxial CdTe  

SciTech Connect (OSTI)

We analyze charge-carrier dynamics using time-resolved spectroscopy and varying epitaxial CdTe thickness in undoped heteroepitaxial CdTe/ZnTe/Si. By employing one-photon and nonlinear two-photon excitation, we assess surface, interface, and bulk recombination. Two-photon excitation with a focused laser beam enables characterization of recombination velocity at the buried epilayer/substrate interface, 17.5??m from the sample surface. Measurements with a focused two-photon excitation beam also indicate a fast diffusion component, from which we estimate an electron mobility of 650?cm{sup 2} (Vs){sup ?1} and diffusion coefficient D of 17?cm{sup 2}?s{sup ?1}. We find limiting recombination at the epitaxial film surface (surface recombination velocity S{sub surface}?=?(2.8?±?0.3)?×?10{sup 5?}cm?s{sup ?1}) and at the heteroepitaxial interface (interface recombination velocity S{sub interface}?=?(4.8?±?0.5)?×?10{sup 5?}cm?s{sup ?1}). The results demonstrate that reducing surface and interface recombination velocity is critical for photovoltaic solar cells and electronic devices that employ epitaxial CdTe.

Kuciauskas, Darius, E-mail: Darius.Kuciauskas@nrel.gov; Farrell, Stuart; Dippo, Pat; Moseley, John; Moutinho, Helio; Li, Jian V.; Allende Motz, A. M.; Kanevce, Ana; Zaunbrecher, Katherine; Gessert, Timothy A.; Levi, Dean H.; Metzger, Wyatt K. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401-3305 (United States); Colegrove, Eric; Sivananthan, S. [Microphysics Laboratory, Physics Department, University of Illinois at Chicago, Chicago, Illinois 60612 (United States)

2014-09-28T23:59:59.000Z