National Library of Energy BETA

Sample records for uup se te

  1. Heterojunctions of model CdTe/CdSe mixtures

    SciTech Connect (OSTI)

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-03-18

    We report on the strain behavior of compound mixtures of model group IIVI semiconductors. We use the StillingerWeber Hamiltonian that we recently introduced, specifically developed to model binary mixtures of group IIVI compounds such as CdTe and CdSe. We also employ molecular dynamics simulations to examine the behavior of thin sheets of material, bilayers of CdTe and CdSe. The lattice mismatch between the two compounds leads to a strong bending of the entire sheet, with about a 0.5 to 1 deflection between neighboring planes. To further analyze bilayer bending, we introduce a simple one-dimensional model and use energy minimization to find the angle of deflection. The analysis is equivalent to a least-squares straight line fit. We consider the effects of bilayers which are asymmetric with respect to the thickness of the CdTe and CdSe parts. We thus learn that the bending can be subdivided into four kinds depending on the compressive/tensile nature of each outer plane of the sheet. We use this approach to directly compare our findings with experimental results on the bending of CdTe/CdSe rods. To reduce the effects of the lattice mismatch we explore diffuse interfaces, where we mix (i.e. alloy) Te and Se, and estimate the strain response.

  2. Heterojunctions of model CdTe/CdSe mixtures

    SciTech Connect (OSTI)

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-03-18

    We report on the strain behavior of compound mixtures of model group II-VI semiconductors. We use the Stillinger-Weber Hamiltonian that we recently introduced, specifically developed to model binary mixtures of group II-VI compounds such as CdTe and CdSe. We also employ molecular dynamics simulations to examine the behavior of thin sheets of material, bilayers of CdTe and CdSe. The lattice mismatch between the two compounds leads to a strong bending of the entire sheet, with about a 0.5 to 1° deflection between neighboring planes. To further analyze bilayer bending, we introduce a simple one-dimensional model and use energy minimization to find the angle of deflection. The analysis is equivalent to a least-squares straight line fit. We consider the effects of bilayers which are asymmetric with respect to the thickness of the CdTe and CdSe parts. We thus learn that the bending can be subdivided into four kinds depending on the compressive/tensile nature of each outer plane of the sheet. We use this approach to directly compare our findings with experimental results on the bending of CdTe/CdSe rods. To reduce the effects of the lattice mismatch we explore diffuse interfaces, where we mix (i.e. alloy) Te and Se, and estimate the strain response.

  3. Heterojunctions of model CdTe/CdSe mixtures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-03-18

    We report on the strain behavior of compound mixtures of model group II-VI semiconductors. We use the Stillinger-Weber Hamiltonian that we recently introduced, specifically developed to model binary mixtures of group II-VI compounds such as CdTe and CdSe. We also employ molecular dynamics simulations to examine the behavior of thin sheets of material, bilayers of CdTe and CdSe. The lattice mismatch between the two compounds leads to a strong bending of the entire sheet, with about a 0.5 to 1° deflection between neighboring planes. To further analyze bilayer bending, we introduce a simple one-dimensional model and use energy minimization tomore » find the angle of deflection. The analysis is equivalent to a least-squares straight line fit. We consider the effects of bilayers which are asymmetric with respect to the thickness of the CdTe and CdSe parts. We thus learn that the bending can be subdivided into four kinds depending on the compressive/tensile nature of each outer plane of the sheet. We use this approach to directly compare our findings with experimental results on the bending of CdTe/CdSe rods. To reduce the effects of the lattice mismatch we explore diffuse interfaces, where we mix (i.e. alloy) Te and Se, and estimate the strain response.« less

  4. Reverse Monte Carlo simulation of Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} glasses

    SciTech Connect (OSTI)

    Abdel-Baset, A. M.; Rashad, M.; Moharram, A. H.

    2013-12-16

    Two-dimensional Monte Carlo of the total pair distribution functions g(r) is determined for Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} alloys, and then it used to assemble the three-dimensional atomic configurations using the reverse Monte Carlo simulation. The partial pair distribution functions g{sub ij}(r) indicate that the basic structure unit in the Se{sub 80}Te{sub 15}Sb{sub 5} glass is di-antimony tri-selenide units connected together through Se-Se and Se-Te chain. The structure of Se{sub 80}Te{sub 20} alloys is a chain of Se-Te and Se-Se in addition to some rings of Se atoms.

  5. Thermodynamic properties of model CdTe/CdSe mixtures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-02-20

    We report on the thermodynamic properties of binary compound mixtures of model groups II–VI semiconductors. We use the recently introduced Stillinger–Weber Hamiltonian to model binary mixtures of CdTe and CdSe. We use molecular dynamics simulations to calculate the volume and enthalpy of mixing as a function of mole fraction. The lattice parameter of the mixture closely follows Vegard's law: a linear relation. This implies that the excess volume is a cubic function of mole fraction. A connection is made with hard sphere models of mixed fcc and zincblende structures. We found that the potential energy exhibits a positive deviation frommore » ideal soluton behaviour; the excess enthalpy is nearly independent of temperatures studied (300 and 533 K) and is well described by a simple cubic function of the mole fraction. Using a regular solution approach (combining non-ideal behaviour for the enthalpy with ideal solution behaviour for the entropy of mixing), we arrive at the Gibbs free energy of the mixture. The Gibbs free energy results indicate that the CdTe and CdSe mixtures exhibit phase separation. The upper consolute temperature is found to be 335 K. Finally, we provide the surface energy as a function of composition. Moreover, it roughly follows ideal solution theory, but with a negative deviation (negative excess surface energy). This indicates that alloying increases the stability, even for nano-particles.« less

  6. Wide emission-tunable CdTeSe/ZnSe/ZnS core-shell quantum dots...

    Office of Scientific and Technical Information (OSTI)

    Title: Wide emission-tunable CdTeSeZnSeZnS core-shell quantum dots and their conjugation with E. coli O-157 Highlights: * QDs with variety morphology were obtained via an ...

  7. Wide emission-tunable CdTeSe/ZnSe/ZnS core-shell quantum dots and their

    Office of Scientific and Technical Information (OSTI)

    conjugation with E. coli O-157 (Journal Article) | SciTech Connect Wide emission-tunable CdTeSe/ZnSe/ZnS core-shell quantum dots and their conjugation with E. coli O-157 Citation Details In-Document Search Title: Wide emission-tunable CdTeSe/ZnSe/ZnS core-shell quantum dots and their conjugation with E. coli O-157 Highlights: * QDs with variety morphology were obtained via an injection controlled process. * 3-D PL spectra of core-shell QDs show different excitation wavelength dependence. *

  8. CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor

    SciTech Connect (OSTI)

    Sedova, I. V. Lyublinskaya, O. G.; Sorokin, S. V.; Sitnikova, A. A.; Toropov, A. A.; Donatini, F.; Dang, Si Le; Ivanov, S. V.

    2007-11-15

    A procedure for formation of CdSe quantum dots (QDs) in a ZnSe matrix is suggested. The procedure is based on the introduction of a CdTe submonolayer stressor deposited on the matrix surface just before deposition of the material of the QDs. (For CdTe/ZnSe structure, the relative lattice mismatch is {delta}a/a {approx} 14%.) The stressor forms small strained islands at the ZnSe surface, thus producing local fields of high elastic stresses controlling the process of the self-assembling of the QDs. According to the data of transmission electron microscopy, this procedure allows a considerable increase in the surface density of QDs, with a certain decrease in their lateral dimensions (down to 4.5 {+-} 1.5 nm). In the photoluminescence spectra, a noticeable ({approx}150 meV) shift of the peak to longer wavelengths from the position of the reference CdSe/ZnSe QD structure is observed. The shift is due to some transformation of the morphology of the QDs and an increase in the Cd content in the QDs. Comprehensive studies of the nanostructures by recording and analyzing the excitation spectra of photoluminescence, the time-resolved photoluminescence spectra, and the cathodoluminescence spectra show that the emission spectra involve two types of optical transitions, namely, the type-I transitions in the CdSeTe/ZnSe QDs and the type-II transitions caused mainly by the low cadmium content (Zn,Cd)(Se,Te)/ZnSe layer formed between the QDs.

  9. Role of polycrystallinity in CdTe and CuInSe sub 2 photovoltaic cells

    SciTech Connect (OSTI)

    Sites, J.R. )

    1991-01-01

    The polycrystalline nature of thin-film CdTe and CuInSe{sub 2} solar cells continues to be a major factor in several individual losses that limit overall cell efficiency. This report describes progress in the quantitative separation of these losses, including both measurement and analysis procedures. It also applies these techniques to several individual cells to help document the overall progress with CdTe and CuInSe{sub 2} cells. Notably, CdTe cells from Photon Energy have reduced window photocurrent losses to 1 mA/Cm{sup 2}; those from the University of South Florida have achieved a maximum power voltage of 693 mV; and CuInSe{sub 2} cells from International Solar Electric Technology have shown a hole density as high as 7 {times} 10{sup 16} cm{sup {minus}3}, implying a significant reduction in compensation. 9 refs.

  10. Thermoelectric properties of polycrystalline In4Se3 and In4Te3

    SciTech Connect (OSTI)

    Shi, Xun; Cho, Jung Y; Salvador, James R.; Yang, Jihui; Wang, Hsin

    2010-01-01

    High thermoelectric performance of a single crystal layered compound In{sub 4}Se{sub 3} was reported recently. We present here an electrical and thermal transport property study over a wide temperature range for polycrystalline samples of In{sub 4}Se{sub 3} and In{sub 4}Te{sub 3}. Our data demonstrate that these materials are lightly doped semiconductors, leading to large thermopower and resistivity. Very low thermal conductivity, below 1 W/m K, is observed. The power factors for In{sub 4}Se{sub 3} and In{sub 4}Te{sub 3} are much smaller when compared with state-of-the-art thermoelectric materials. This combined with the very low thermal conductivity results in the maximum ZT value of less than 0.6 at 700 K for In{sub 4}Se{sub 3}.

  11. Low-temperature photoluminescence analysis of CdTeSe crystals for radiation-detector applications

    SciTech Connect (OSTI)

    YANG G.; Roy, U. N.; Bolotnikov, A. E.; Cui, Y.; Camarda, G.S.; Hossain, A.; and James, R. B.

    2015-10-05

    Goal: Understanding the changes of material defects in CdTeSe following annealing. Experimental results and discussions: Infrared (IR) transmission microscopy; current-voltage measurements (Highlight: Improvement of resistivity of un-doped crystals after annealing); low-temperature photoluminescence (PL) spectrum of as-grown and annealed samples.

  12. Local-moment magnetism in superconducting FeTe0.35Se0.65 as seen...

    Office of Scientific and Technical Information (OSTI)

    Local-moment magnetism in superconducting FeTe0.35Se0.65 as seen via inelastic neutron scattering Prev Next Title: Local-moment magnetism in superconducting FeTe0.35Se0.65 as ...

  13. Resonance photoelectron spectroscopy of TiX{sub 2} (X = S, Se, Te) titanium dichalcogenides

    SciTech Connect (OSTI)

    Shkvarin, A. S. Yarmoshenko, Yu. M.; Skorikov, N. A.; Yablonskikh, M. V.; Merentsov, A. I.; Shkvarina, E. G.; Titov, A. N.

    2012-11-15

    The photoelectron valence band spectra of TiS{sub 2}, TiSe{sub 2}, and TiTe{sub 2} dichalcogenides are investigated in the Ti 2p-3d resonance regime. Resonance bands in the vicinity of the Fermi energy are found for TiS{sub 2} and TiTe{sub 2}. The nature of these bands is analyzed based on model calculations of the density of electronic states in TiS{sub 2}, TiSe{sub 2}, and TiTe{sub 2} compounds intercalated by titanium atoms. Analysis of experimental data and their comparison with model calculations showed that these bands have different origins. It is found that the resonance enhancement of an additional band observed in TiS{sub 2} is explained by self-intercalation by titanium during the synthesis of this compound. The resonance enhancement in TiTe{sub 2} is caused by occupation of the 3d band in Ti.

  14. Photoluminescence studies of type-II CdSe/CdTe superlattices

    SciTech Connect (OSTI)

    Li Jingjing; Johnson, Shane R.; Wang Shumin; Ding Ding; Ning Cunzheng; Zhang Yonghang; Yin Leijun; Skromme, B. J.; Liu Xinyu; Furdyna, Jacek K.

    2012-08-06

    CdSe/CdTe type-II superlattices grown on GaSb substrates by molecular beam epitaxy are studied using time-resolved and steady-state photoluminescence (PL) spectroscopy at 10 K. The relatively long carrier lifetime of 188 ns observed in time-resolved PL measurements shows good material quality. The steady-state PL peak position exhibits a blue shift with increasing excess carrier concentration. Self-consistent solutions of the Schroedinger and Poisson equations show that this effect can be explained by band bending as a result of the spatial separation of electrons and holes, which is critical confirmation of a strong type-II band edge alignment between CdSe and CdTe.

  15. CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

    SciTech Connect (OSTI)

    Li Jingjing; Liu Shi; Wang Shumin; Ding Ding; Johnson, Shane R.; Zhang Yonghang; Liu Xinyu; Furdyna, Jacek K.; Smith, David J.

    2012-03-19

    CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63 {+-} 0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.

  16. Electronic structure of titanium dichalcogenides TiX{sub 2} (X = S, Se, Te)

    SciTech Connect (OSTI)

    Shkvarin, A. S. Yarmoshenko, Yu. M.; Skorikov, N. A.; Yablonskikh, M. V.; Merentsov, A. I.; Shkvarina, E. G.; Titov, A. N.

    2012-01-15

    The electronic structure and the chemical bond in titanium dichalcogenides TiX{sub 2} (X = S, Se, Te), which are promising electrode materials for lithium batteries, are studied experimentally and theoretically. It is found that the X-ray photoelectron spectra of the valence bands and the core levels of titanium and its X-ray L{sub 2,3} absorption spectra demonstrate a change in the ionic and covalent components of the chemical bond in these compounds. The densities of states in these compounds are calculated by the full-potential augmented-plane-wave method, and multiplet calculations of the X-ray L{sub 2,3} absorption spectra of titanium are performed. It is shown that, in the row TiS{sub 2}-TiSe{sub 2}-TiTe{sub 2}, the covalence increases, the ionicity of the chemical bond decreases, and the effect of the crystal field of a ligand is weakened.

  17. Quantifying electron-phonon coupling in CdTe{sub 1−x}Se{sub x} nanocrystals via coherent phonon manipulation

    SciTech Connect (OSTI)

    Spann, B. T.; Xu, X.

    2014-08-25

    We employ ultrafast transient absorption spectroscopy with temporal pulse shaping to manipulate coherent phonon excitation and quantify the strength of electron-phonon coupling in CdTe{sub 1−x}Se{sub x} nanocrystals (NCs). Raman active CdSe and CdTe longitudinal optical phonon (LO) modes are excited and probed in the time domain. By temporally controlling pump pulse pairs to coherently excite and cancel coherent phonons in the CdTe{sub 1−x}Se{sub x} NCs, we estimate the relative amount of optical energy that is coupled to the coherent CdSe LO mode.

  18. Magneto-optical characterizations of FeTe???Se??? thin films with critical current density over 1 MA/cm

    SciTech Connect (OSTI)

    Sun, Yue; Li, Qiang; Tsuchiya, Yuji; Pyon, Sunseng; Tamegai, Tsuyoshi; Zhang, Cheng; Ozaki, Toshinori

    2015-01-01

    We performed magneto-optical (MO) measurements on FeTe???Se??? thin films grown on LaAlO? (LAO) and Yttria-stabilized zirconia (YSZ) single-crystalline substrates. These thin films show superconducting transition temperature Tc ~19 K, 4 K higher than the bulk sample. Typical roof-top patterns can be observed in the MO images of thin films grown on LAO and YSZ, from which a large and homogeneous critical current density Jc ~ 3 - 4 x 10? A/cm at 5 K was obtained. Magnetic flux penetration measurement reveals that the current is almost isotropically distributed in the two thin films. Compared with bulk crystals, FeTe???Se??? thin film demonstrates not only higher Tc, but also much larger Jc, which is attractive for applications.

  19. Electronic structure, transport, and phonons of SrAgChF (Ch = S,Se,Te): Bulk superlattice thermoelectrics

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gudelli, Vijay Kumar; Kanchana, V.; Vaitheeswaran, G.; Singh, David J.; Svane, Axel; Christensen, Niels Egede; Mahanti, Subhendra D.

    2015-07-15

    Here, we report calculations of the electronic structure, vibrational properties, and transport for the p-type semiconductors, SrAgChF (Ch = S, Se, and Te). We find soft phonons with low frequency optical branches intersecting the acoustic modes below 50 cm–1, indicative of a material with low thermal conductivity. The bands at and near the valence-band maxima are highly two-dimensional, which leads to high thermopowers even at high carrier concentrations, which is a combination that suggests good thermoelectric performance. These materials may be regarded as bulk realizations of superlattice thermoelectrics.

  20. Te

    U.S. Energy Information Administration (EIA) Indexed Site

    N u n a v u t O n t a r i o A l b e r t a Te x a s N o r t h w e s t Te r r i t o r i e s ... M o n t a n a U t a h I d a h o C a l i f o r n i a N e v a d a O r e g o n A r i z o n a ...

  1. Te

    U.S. Energy Information Administration (EIA) Indexed Site

    D u N o r d - O u e s t Te r r e - N e u v e - e t - L a b r a d o r Q u b e c l e - d u - P r i n c e - d o u a r d N o u v e l l e - c o s s e N o u v e a u - B r u n ...

  2. Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography

    SciTech Connect (OSTI)

    Bonef, Bastien; Rouvire, Jean-Luc; Jouneau, Pierre-Henri; Bellet-Amalric, Edith; Grard, Lionel; Mariette, Henri; Andr, Rgis; Bougerol, Catherine; Grenier, Adeline

    2015-02-02

    High resolution scanning transmission electron microscopy and atom probe tomography experiments reveal the presence of an intermediate layer at the interface between two binary compounds with no common atom, namely, ZnTe and CdSe for samples grown by Molecular Beam Epitaxy under standard conditions. This thin transition layer, of the order of 1 to 3 atomic planes, contains typically one monolayer of ZnSe. Even if it occurs at each interface, the direct interface, i.e., ZnTe on CdSe, is sharper than the reverse one, where the ZnSe layer is likely surrounded by alloyed layers. On the other hand, a CdTe-like interface was never observed. This interface knowledge is crucial to properly design superlattices for optoelectronic applications and to master band-gap engineering.

  3. Role of polycrystallinity in CdTe and CuInSe{sub 2} photovoltaic cells. Annual subcontract report, 1 April 1990--31 March 1991

    SciTech Connect (OSTI)

    Sites, J.R.

    1991-12-31

    The polycrystalline nature of thin-film CdTe and CuInSe{sub 2} solar cells continues to be a major factor in several individual losses that limit overall cell efficiency. This report describes progress in the quantitative separation of these losses, including both measurement and analysis procedures. It also applies these techniques to several individual cells to help document the overall progress with CdTe and CuInSe{sub 2} cells. Notably, CdTe cells from Photon Energy have reduced window photocurrent losses to 1 mA/Cm{sup 2}; those from the University of South Florida have achieved a maximum power voltage of 693 mV; and CuInSe{sub 2} cells from International Solar Electric Technology have shown a hole density as high as 7 {times} 10{sup 16} cm{sup {minus}3}, implying a significant reduction in compensation. 9 refs.

  4. Effect of thermal annealing on structure and optical band gap of Se{sub 66}Te{sub 25}In{sub 9} thin films

    SciTech Connect (OSTI)

    Dwivedi, D. K.; Pathak, H. P.; Shukla, Nitesh; Kumar, Vipin

    2015-05-15

    Thin films of a-Se{sub 66}Te{sub 25}In{sub 9} have been deposited onto a chemically cleaned glass substrate by thermal evaporation technique under vacuum. Glassy nature of the films has been ascertained by X-ray diffraction pattern. The analysis of absorption spectra, measured at normal incidence, in the spectral range 400-1100 nm has been used for the optical characterization of thin films under investigation. The effect of thermal annealing on structure and optical band gap (E{sub g}) of a-Se{sub 66}Te{sub 25}In{sub 9} have been studied.

  5. Polytypism, polymorphism, and superconductivity in TaSe2–xTex

    SciTech Connect (OSTI)

    Luo, Huixia; Xie, Weiwei; Tao, Jing; Inoue, Hiroyuki; Gyenis, András; Krizan, Jason W.; Yazdani, Ali; Zhu, Yimei; Cava, Robert Joseph

    2015-03-03

    Polymorphism in materials often leads to significantly different physical properties - the rutile and anatase polymorphs of TiO₂ are a prime example. Polytypism is a special type of polymorphism, occurring in layered materials when the geometry of a repeating structural layer is maintained but the layer stacking sequence of the overall crystal structure can be varied; SiC is an example of a material with many polytypes. Although polymorphs can have radically different physical properties, it is much rarer for polytypism to impact physical properties in a dramatic fashion. Here we study the effects of polytypism and polymorphism on the superconductivity of TaSe₂, one of the archetypal members of the large family of layered dichalcogenides. We show that it is possible to access 2 stable polytypes and 2 stable polymorphs in the TaSe2-xTex solid solution, and find that the 3R polytype shows a superconducting transition temperature that is between 6 and 17 times higher than that of the much more commonly found 2H polytype. Thus, the reason for this dramatic change is not apparent, but we propose that it arises either from a remarkable dependence of Tc on subtle differences in the characteristics of the single layers present, or from a surprising effect of the layer stacking sequence on electronic properties that instead are expected to be dominated by the properties of a single layer in materials of this kind.

  6. Solar-energy conversion by combined photovoltaic converters with CdTe and CuInSe{sub 2} base layers

    SciTech Connect (OSTI)

    Khrypunov, G. S. Sokol, E. I.; Yakimenko, Yu. I.; Meriuts, A. V.; Ivashuk, A. V.; Shelest, T. N.

    2014-12-15

    The possibility of the combined use of bifacial thin-film solar cells based on CdTe and frontal solar cells with a CuInSe{sub 2} base layer in tandem structures is experimentally confirmed. It is found that, for the use of bifacial solar cells based on cadmium telluride in a tandem structure, the optimal thickness of their base layer should be 1 ?m. The gain in the efficiency of the tandem structure, compared with an individual CuInSe{sub 2}-based solar cell, is 1.8% in the case of series-connected solar cells and 1.3%, for parallel-connected.

  7. Observation of an electron band above the Fermi level in FeTe?.??Se?.?? from in-situ surface doping

    SciTech Connect (OSTI)

    Zhang, P.; Richard, P.; Xu, N.; Xu, Y. -M.; Ma, J.; Qian, T.; Fedorov, A. V.; Denlinger, J. D.; Gu, G. D.; Ding, H.

    2014-10-27

    We used in-situ potassium (K) evaporation to dope the surface of the iron-based superconductor FeTe?.??Se?.??. The systematic study of the bands near the Fermi level confirms that electrons are doped into the system, allowing us to tune the Fermi level of this material and to access otherwise unoccupied electronic states. In particular, we observe an electron band located above the Fermi level before doping that shares similarities with a small three-dimensional pocket observed in the cousin, heavily-electron-doped KFe??xSe? compound.

  8. Comparison of crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te nanocrystalline thin films: Effects of homogeneous irradiation with an electron beam

    SciTech Connect (OSTI)

    Takashiri, Masayuki, E-mail: takashiri@tokai-u.jp; Imai, Kazuo; Uyama, Masato; Nishi, Yoshitake [Department of Materials Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Hagino, Harutoshi; Miyazaki, Koji [Department of Mechanical and Control Engineering, Kyushu Institute of Technology, 1-1 Sensui, Tobata-ku, Kitakyushu 804-8550 (Japan); Tanaka, Saburo [Department of Mechanical Engineering, College of Engineering, Nihon University, Nakagawara, Tokusada, Tamuramachi, Koriyama, Fukushima 963-8642 (Japan)

    2014-06-07

    The effects of homogenous electron beam (EB) irradiation on the crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te thin films were investigated. Both types of thin films were prepared by flash evaporation, after which homogeneous EB irradiation was performed at an acceleration voltage of 0.17?MeV. For the n-type thin films, nanodots with a diameter of less than 10?nm were observed on the surface of rice-like nanostructures, and crystallization and crystal orientation were improved by EB irradiation. The resulting enhancement of mobility led to increased electrical conductivity and thermoelectric power factor for the n-type thin films. In contrast, the crystallization and crystal orientation of the p-type thin films were not influenced by EB irradiation. The carrier concentration increased and mobility decreased with increased EB irradiation dose, possibly because of the generation of defects. As a result, the thermoelectric power factor of p-type thin films was not improved by EB irradiation. The different crystallization behavior of the n-type and p-type thin films is attributed to atomic rearrangement during EB irradiation. Selenium in the n-type thin films is more likely to undergo atomic rearrangement than the other atoms present, so only the crystallinity of the n-type Bi-Se-Te thin films was enhanced.

  9. Optimum composition of a Bi{sub 2}Te{sub 3-x}Se{sub x} alloy for the n-type leg of a thermoelectric generator

    SciTech Connect (OSTI)

    Prokofieva, L. V. Pshenay-Severin, D. A.; Konstantinov, P. P.; Shabaldin, A. A.

    2009-08-15

    The reliability of determination of model parameters for the Bi{sub 2}Te{sub 3-x}Se{sub x} alloys is improved by extending the concentration and temperature ranges in experimental studies and, correspondingly, in calculations of kinetic coefficients based on the two-band model of the electronic spectrum. The obtained results served as a motivation for a study of the thermoelectric figure of merit for the above-mentioned alloys with x = 0.3, 0.45, and 0.6 and with the electron concentration varied in the range (1-50) x 10{sup 18} cm{sup -3} at temperatures 300-550 K. Comparison of the results showed that the highest efficiency is exhibited by the Bi{sub 2}Te{sub 2.7}Se{sub 0.3} alloy with the absolute value of the thermoelectric power of about 165 {mu}VK{sup -1} at 300 K, and the dimensionless efficiency is equal to 1.2 at 410 K. An appreciable decrease in thermal conductivity in alloys with x = 0.6 at 410 K is related to a larger band gap and could beneficially affect the figure of merit. However, the magnitude of this effect is found to be too small to compensate a decrease in electrical conductivity due to a large fraction of heavy electrons in the concentration and to a high content of selenium.

  10. Investigation of scanning tunneling spectra on iron-based superconductor FeSe0.5Te0.5(in Chinese)

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Du, Z. -Y.; Fang, D. -L.; Wang, Z. -Y.; Du, G.; Yang, X.; Yang, H.; Gu, G.; -H, Wen H.

    2015-05-05

    FeSe0.5Te0.5 single crystals with superconducting critical temperature of 13.5 K are investigated by scanning tunneling microscopy/spectroscopy (STM/STS) measureflents in detail. STM image on the top surface shows an atomically resolved square lattice consisted by white and dark spots with a constant of about 3.73± 0.03 Å which is consistent with the lattice constant 3.78 Å. The Se and Te atoms with a height difference of about 0.35 Å are successfully identified since the sizes of the two kinds of atoms are different. The tunneling spectra show very large zero-bias conductance value and asymmetric coherent peaks in the superconducting state. Accordingmore » to the positions of coherence peaks, we determine the superconducting gap 2Δ = 5.5 meV, and the reduced gap 2Δ/kBTc = 4.9 is larger than the value predicted by the weak-coupling BCS theory. The zero-bias conductance at 1.7 K only have a decrease of about 40% compared with the normal state conductance, which may originate from some scattering and broadening mechanism in the material. This broadening effect will also make the superconducting gap determined by the distance between the coherence peaks larger than the exact gap value. The asymmetric structure of the tunneling spectra near the superconducting gap is induced by the hump on the background. This hump appears at temperature more than twice the superconducting critical temperature. This kind of hump has also been observed in other iron pnictides and needs further investigation. A possible bosonic mode outside the coherence peak with a mode energy Ω of about 5.5 meV is observed in some tunneling spectra, and the ratio between the mode energy and superconducting transition temperature Ω/kBTc ≈ 4.7 is roughly consistent with the universal ratio 4.3 in iron-based superconductors. The high-energy background of the spectra beyond the superconducting gaps shows a V-shape feature. The slopes of the differential conductance spectra at high energy are very different in the areas of Te-atom cluster and Se-atom cluster, and the difference extends to the energy of more than 300 meV. The differential conductance mapping has very little information about the quasi-particle interference of the superconducting state, which may result from the other strong scattering mechanism in the sample.« less

  11. Substitution of Ni for Fe in superconducting Fe?.??Te?.?Se?.? depresses the normal-state conductivity but not the magnetic spectral weight

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Jinghui; Tranquada, J. M.; Zhong, Ruidan; Li, Shichao; Gan, Yuan; Xu, Zhijun; Zhang, Cheng; Ozaki, T.; Matsuda, M.; Zhao, Yang; et al

    2015-01-05

    We have performed systematic resistivity and inelastic neutron scattering measurements on Fe?.???zNizTe?.?Se?.? samples to study the impact of Ni substitution on the transport properties and the low-energy (? 12 meV) magnetic excitations. It is found that, with increasing Ni doping, both the conductivity and superconductivity are gradually suppressed; in contrast, the low-energy magnetic spectral weight changes little. Comparing with the impact of Co and Cu substitution, we find that the effects on conductivity and superconductivity for the same degree of substitution grow systematically as the atomic number of the substituent deviates from that of Fe. The impact of the substituentsmoreas scattering centers appears to be greater than any contribution to carrier concentration. The fact that low-energy magnetic spectral weight is not reduced by increased electron scattering indicates that the existence of antiferromagnetic correlations does not depend on electronic states close to the Fermi energy.less

  12. Point defects in CdTexSe1-x crystals grown from a Te-rich solution for applications in detecting radiation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gul, R.; Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Hossain, A.; Lee, W.; Yang, G.; Burger, A.; James, R. B.; et al

    2015-04-15

    We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from (1–30) V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.

  13. Electronic structure of antifluorite Cu{sub 2}X (X = S, Se, Te) within the modified Becke-Johnson potential plus an on-site Coulomb U

    SciTech Connect (OSTI)

    Zhang, Yubo; Wang, Youwei; Xi, Lili; Qiu, Ruihao; Shi, Xun; Zhang, Peihong E-mail: pzhang3@buffalo.edu; Beijing Computational Science Research Center, Beijing 100084 ; Zhang, Wenqing E-mail: pzhang3@buffalo.edu; School of Chemistry and Chemical Engineering, and Sate Key Laboratory of Coordination Chemistry, Nanjing University, Jiangsu 210093

    2014-02-21

    The traditional photon absorbers Cu{sub 2?x}X (X = S, Se, and Te) have regained significant research attention in the search of earth-abundant photovoltaic materials. These moderate- and narrow-gap materials have also been shown to exhibit excellent thermoelectric properties recently. However, semimetallic band structures with inverted band orderings are predicted for antifluorite structure Cu{sub 2}X using density functional theory with the local density approximation or the generalized gradient approximation. We find that semiconducting band structures and normal band orderings can be obtained using the modified Becke-Johnson potential plus an on-site Coulomb U (the mBJ+U approach), which is consistent with our earlier finding for diamond-like Cu-based multinary semiconductors [Y. Zhang, J. Zhang, W. Gao, T. A. Abtew, Y. Wang, P. Zhang, and W. Zhang, J. Chem. Phys. 139, 184706 (2013)]. The trend of the chemical bonding of Cu{sub 2}X is analyzed, which shows that the positions of the valence band maximum and conduction band minimum are strongly affected by the inter-site pd and intra-site sp hybridizations, respectively. The calculated gaps of Cu{sub 2}S and Cu{sub 2}Se still seem to be underestimated compared with experimental results. We also discuss the effects of different structural phases and Cu disordering and deficiency on the bandgaps of these materials.

  14. Surface collective modes in the topological insulators Bi2Se3 and Bi0.5Sb1.5Te3-xSex

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kogar, A.; Gu, G.; Vig, S.; Thaler, A.; Wong, M. H.; Xiao, Y.; Reig-i-Plessis, D.; Cho, G. Y.; Valla, T.; Pan, Z.; et al

    2015-12-15

    In this study, we used low-energy, momentum-resolved inelastic electron scattering to study surface collective modes of the three-dimensional topological insulators Bi2Se3 and Bi0.5Sb1.5Te3-xSex. Our goal was to identify the “spin plasmon” predicted by Raghu and co-workers [Phys. Rev. Lett. 104, 116401 (2010)]. Instead, we found that the primary collective mode is a surface plasmon arising from the bulk, free carriers in these materials. This excitation dominates the spectral weight in the bosonic function of the surface χ''(q,ω) at THz energy scales, and is the most likely origin of a quasiparticle dispersion kink observed in previous photoemission experiments. Our study suggestsmore » that the spin plasmon may mix with this other surface mode, calling for a more nuanced understanding of optical experiments in which the spin plasmon is reported to play a role.« less

  15. Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi{sub 2}Te{sub 2}Se

    SciTech Connect (OSTI)

    Kushwaha, S. K. Gibson, Q. D.; Cava, R. J.; Xiong, J.; Ong, N. P.; Pletikosic, I.; Weber, A. P.; Fedorov, A. V.; Valla, T.

    2014-04-14

    A comparative study of the properties of topological insulator Bi{sub 2}Te{sub 2}Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8??10{sup 14}?cm{sup ?3}. Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (E{sub F}) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, which the Dirac point for the surface states lies approximately 60?meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near E{sub F}. Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed.

  16. Phase stabilities of pyrite-related MTCh compounds (M=Ni, Pd, Pt; T=Si, Ge, Sn, Pb; Ch=S, Se, Te): A systematic DFT study

    SciTech Connect (OSTI)

    Bachhuber, Frederik; Krach, Alexander; Furtner, Andrea; Söhnel, Tilo; Peter, Philipp; Rothballer, Jan; Weihrich, Richard

    2015-03-15

    Pyrite-type and related systems appear for a wide range of binary and ternary combinations of transition metals and main group elements that form Zintl type dumbbell anion units. Those representatives with 20 valence electrons exhibit an extraordinary structural flexibility and interesting properties as low-gap semiconductors or thermoelectric and electrode materials. This work is devoted to the systematic exploration of novel compounds within the class of MTCh compounds (M=Ni, Pd, Pt; T=Si, Ge, Sn, Pb; Ch=S, Se, Te) by means of density functional calculations. Their preferred structures are predicted from an extended scheme of colored pyrites and marcasites. To determine their stabilities, competing binary MT{sub 2} and MCh{sub 2} boundary phases are taken into account as well as ternary M{sub 3}T{sub 2}Ch{sub 2} and M{sub 2}T{sub 3}Ch{sub 3} systems. Recently established stability diagrams are presented to account for MTCh ordering phenomena with a focus on a not-yet-reported ordering variant of the NiAs{sub 2} type. Due to the good agreement with experimental data available for several PtTCh systems, the predictions for the residual systems are considered sufficiently accurate. - Graphical abstract: Compositional and structural stability of MTCh compounds is investigated from first principle calculations. A conceptional approach is presented to study and predict novel stable and metastable compounds and structures of low gap semiconductors with TCh dumbbell units that are isoelectronic and structurally related to pyrite (FeS{sub 2}). - Highlights: • Study of compositional stability of MTCh vs. M{sub 3}T{sub 2}Ch{sub 2} and M{sub 2}T{sub 3}Ch{sub 3} compounds. • Study of structural stability of known and novel MTCh compounds. • Prediction of novel stable and metastable structures and compounds isoelectronic to pyrite, FeS{sub 2}.

  17. Structural and conductivity studies of CsK(SO{sub 4}){sub 0.32}(SeO{sub 4}){sub 0.68}Te(OH){sub 6}

    SciTech Connect (OSTI)

    Djemel, M.; Abdelhedi, M.; Dammak, M.; Kolsi, A.W.

    2012-12-15

    The compound CsK(SO{sub 4}){sub 0.32}(SeO{sub 4}){sub 0.68}Te(OH){sub 6} crystallizes in the monoclinic P2{sub 1}/n space group. It was analyzed, at room temperature, using X-ray diffractometer data. The main feature of these atomic arrangements is the coexistence of three and different anions (SO{sub 4}{sup 2-}, SeO{sub 4}{sup 2-} and TeO{sub 6}{sup 6-}groups) in the unit cell, connected by hydrogen bonds which make the building of the crystal. The thermal analysis of the title compound shows three distinct endothermal peaks at 435, 460 and 475 K. Complex impedance measurements are performed on this material as a function of both temperature and frequency. The electric conduction has been studied. The temperature dependence on the conductivity indicates that the sample became an ionic conductor at high temperature. - Graphical abstract: Projection of crystal structure CsK(SO{sub 4}){sub 0.32}(SeO{sub 4}){sub 0.68}Te(OH){sub 6} on the ab plane. Highlights: Black-Right-Pointing-Pointer We have studied the results of the crystal structure of the new mixed compound. Black-Right-Pointing-Pointer We have characterized the phase transition observed in DSC curve. Black-Right-Pointing-Pointer The protonic conduction in our material is probably due to a hopping mechanism.

  18. Observation of an electron band above the Fermi level in FeTe{sub 0.55}Se{sub 0.45} from in-situ surface doping

    SciTech Connect (OSTI)

    Zhang, P.; Ma, J.; Qian, T.; Richard, P. Ding, H.; Xu, N.; Xu, Y.-M.; Fedorov, A. V.; Denlinger, J. D.; Gu, G. D.

    2014-10-27

    We used in-situ potassium (K) evaporation to dope the surface of the iron-based superconductor FeTe{sub 0.55}Se{sub 0.45}. The systematic study of the bands near the Fermi level confirms that electrons are doped into the system, allowing us to tune the Fermi level of this material and to access otherwise unoccupied electronic states. In particular, we observe an electron band located above the Fermi level before doping that shares similarities with a small three-dimensional pocket observed in the cousin, heavily electron-doped KFe{sub 2?x}Se{sub 2} compound.

  19. Determination of lateral size distribution of type-II ZnTe/ZnSe stacked submonolayer quantum dots via spectral analysis of optical signature of the Aharanov-Bohm excitons

    SciTech Connect (OSTI)

    Ji, Haojie; Dhomkar, Siddharth; Roy, Bidisha; Kuskovsky, Igor L.; Shuvayev, Vladimir; Deligiannakis, Vasilios; Tamargo, Maria C.; Ludwig, Jonathan; Smirnov, Dmitry; Wang, Alice

    2014-10-28

    For submonolayer quantum dot (QD) based photonic devices, size and density of QDs are critical parameters, the probing of which requires indirect methods. We report the determination of lateral size distribution of type-II ZnTe/ZnSe stacked submonolayer QDs, based on spectral analysis of the optical signature of Aharanov-Bohm (AB) excitons, complemented by photoluminescence studies, secondary-ion mass spectroscopy, and numerical calculations. Numerical calculations are employed to determine the AB transition magnetic field as a function of the type-II QD radius. The study of four samples grown with different tellurium fluxes shows that the lateral size of QDs increases by just 50%, even though tellurium concentration increases 25-fold. Detailed spectral analysis of the emission of the AB exciton shows that the QD radii take on only certain values due to vertical correlation and the stacked nature of the QDs.

  20. Li2Se as a Neutron Scintillator

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Du, Mao-Hua; Shi, Hongliang; Singh, David J.

    2015-06-23

    We show that Li2Se:Te is a potential neutron scintillator material based on density functional calculations. Li2Se exhibits a number of properties favorable for efficient neutron detection, such as a high Li concentration for neutron absorption, a small effective atomic mass and a low density for reduced sensitivity to background gamma rays, and a small band gap for a high light yield. Our calculations show that Te doping should lead to the formation of deep acceptor complex VLi-TeSe, which can facilitate efficient light emission, similar to the emission activation in Te doped ZnSe.

  1. CsBi4Te6: A High-Performance Thermoelectric Material for Low...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    thermoelectric properties of CsBi(4)Te(6) appear to match or exceed those of Bi(2-x)Sb(x)Te(3-y)Se(y) alloys. URL: Link to article - National Center for Biotechnology Information

  2. 125Te NMR chemical-shift trends in PbTeGeTe and PbTeSnTe alloys

    SciTech Connect (OSTI)

    Njegic, Bosiljka; Levin, Evgenii M.; Schmidt-Rohr, Klaus

    2013-10-08

    Complex tellurides, such as doped PbTe, GeTe, and their alloys, are among the best thermoelectric materials. Knowledge of the change in 125Te NMR chemical shift due to bonding to dopant or solute atoms is useful for determination of phase composition, peak assignment, and analysis of local bonding. We have measured the 125Te NMR chemical shifts in PbTe-based alloys, Pb1?xGexTe and Pb1?xSnxTe, which have a rocksalt-like structure, and analyzed their trends. For low x, several peaks are resolved in the 22-kHz MAS 125Te NMR spectra. A simple linear trend in chemical shifts with the number of Pb neighbors is observed. No evidence of a proposed ferroelectric displacement of Ge atoms in a cubic PbTe matrix is detected at low Ge concentrations. The observed chemical shift trends are compared with the results of DFT calculations, which confirm the linear dependence on the composition of the first-neighbor shell. The data enable determination of the composition of various phases in multiphase telluride materials. They also provide estimates of the 125Te chemical shifts of GeTe and SnTe (+970 and +400150 ppm, respectively, from PbTe), which are otherwise difficult to access due to Knight shifts of many hundreds of ppm in neat GeTe and SnTe.

  3. Current enhancement of CdTe-based solar cells

    SciTech Connect (OSTI)

    Paudel, Naba R.; Poplawsky, Jonathan D.; More, Karren Leslie; Yan, Yanfa

    2015-07-30

    We report on the realization of CdTe solar cell photocurrent enhancement using an n-type CdSe heterojunction partner sputtered on commercial SnO2/SnO2:F coated soda-lime glass substrates. With high-temperature close-space sublimation CdTe deposition followed by CdCl2 activation, this thin-film stack allows for substantial interdiffusion at the CdSe/CdTe interface facilitating a CdSexTe1-x alloy formation. The bowing effect causes a reduced optical bandgap of the alloyed absorber layer and, therefore, leads to current enhancement in the long-wavelength region and a decrease in open-circuit voltage (VOC). To overcome the VOC loss and maintain a high short-circuit current (JSC), the CdTe cell configuration has been modified using combined CdS:O/CdSe window layers. The new device structure has demonstrated enhanced collection from both short-and long-wavelength regions as well as a VOC improvement. With an optimized synthesis process, a small-area cell using CdS:O/CdSe window layer showed an efficiency of 15.2% with a VOC of 831 mV, a JSC of 26.3 mA/cm2, and a fill factor of 69.5%, measured under an AM1.5 illumination without antireflection coating. Furthermore, the results provide new directions for further improvement of CdTe-based solar cells.

  4. Current enhancement of CdTe-based solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Paudel, Naba R.; Poplawsky, Jonathan D.; More, Karren Leslie; Yan, Yanfa

    2015-07-30

    We report on the realization of CdTe solar cell photocurrent enhancement using an n-type CdSe heterojunction partner sputtered on commercial SnO2/SnO2:F coated soda-lime glass substrates. With high-temperature close-space sublimation CdTe deposition followed by CdCl2 activation, this thin-film stack allows for substantial interdiffusion at the CdSe/CdTe interface facilitating a CdSexTe1-x alloy formation. The bowing effect causes a reduced optical bandgap of the alloyed absorber layer and, therefore, leads to current enhancement in the long-wavelength region and a decrease in open-circuit voltage (VOC). To overcome the VOC loss and maintain a high short-circuit current (JSC), the CdTe cell configuration has been modifiedmore » using combined CdS:O/CdSe window layers. The new device structure has demonstrated enhanced collection from both short-and long-wavelength regions as well as a VOC improvement. With an optimized synthesis process, a small-area cell using CdS:O/CdSe window layer showed an efficiency of 15.2% with a VOC of 831 mV, a JSC of 26.3 mA/cm2, and a fill factor of 69.5%, measured under an AM1.5 illumination without antireflection coating. Furthermore, the results provide new directions for further improvement of CdTe-based solar cells.« less

  5. Neutron capture of /sup 122/Te, /sup 123/Te, /sup 124/Te, /sup 125/Te, and /sup 126/Te

    SciTech Connect (OSTI)

    Macklin, R.L.; Winters, R.R.

    1989-07-01

    Isotopically enriched samples of the tellurium isotopes from mass 122 to mass 126 were used to measure neutron capture in the energy range 2.6 keV to 600 keV at the Oak Ridge Electron Linear Accelerator pulsed neutron source. Starting at 2.6 keV, over 200 Breit-Wigner resonances for each isotope were used to describe the capture data. Least-squares adjustment gave parameters and their uncertainties for a total of 1659 resonances. Capture cross sections averaged over Maxwellian neutron distributions with temperatures ranging from kT = 5 keV to kT = 100 keV were derived for comparison with stellar nucleosynthesis calculations. For the three isotopes shielded from the astrophysical r-process, /sup 122/Te, /sup 123/Te and /sup 124/Te at kT = 30 keV the respective values were (280 /plus minus/ 10) mb, (819 /plus minus/ 30) mb and (154 /plus minus/ 6) mb. The corresponding products of cross section and solar system abundance are nearly equal in close agreement with s-process nucleosynthesis calculations. 26 refs., 8 figs., 10 tabs.

  6. TE Connectivity Finds Answers in Tomography

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    TE Connectivity Finds Answers in Tomography TE Connectivity Finds Answers in Tomography Print Thursday, 22 August 2013 10:50 TE Connectivity is a world leader in connectivity-the...

  7. LgCOOleS, Se*&,,

    Office of Legacy Management (LM)

    ; "Ofice Mem . m *" ' ' *IilCl:t Consists of & " ' / Of LgCOOleS, Se*&,, es * UNITED STATES G-OVERNM NT <;$)~~ 3i;t-j /Lj ' , ~~~' jCjC;O c) TO I LT. :s. Clnr!te, ,;or,~~~,~' , -.,,..:-:-Y"' r~-;i~.L.-Z.:r DATE: uL"C!.,?r 6, 1' ?L9 A meting mj: !1:1d in i:1CG bet,. _ ^ .- ',cel representatives 51 ;.2rshz:i sr.3 the A;.35 to nwotiztc .the prices for producing FY-1: (brow oxise), _1 I%-; (green salt and .?T-12 (he::.-iZluoriic) fcr the sc2or.d 3,uarter of

  8. Experimental determination of valence band offset at PbTe/CdTe(111)

    Office of Scientific and Technical Information (OSTI)

    heterojunction interface by x-ray photoelectron spectroscopy (Journal Article) | SciTech Connect Experimental determination of valence band offset at PbTe/CdTe(111) heterojunction interface by x-ray photoelectron spectroscopy Citation Details In-Document Search Title: Experimental determination of valence band offset at PbTe/CdTe(111) heterojunction interface by x-ray photoelectron spectroscopy Lattice-matched PbTe/CdTe(111) heterojunction interfaces were studied using x-ray photoelectron

  9. Solon SE | Open Energy Information

    Open Energy Info (EERE)

    to: navigation, search Name: Solon SE Place: Berlin, Berlin, Germany Zip: D-12489 Sector: Solar Product: Manufacturer of PV modules and tracking systems, and integrator of solar...

  10. TE Connectivity Finds Answers in Tomography

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    TE Connectivity Finds Answers in Tomography TE Connectivity Finds Answers in Tomography Print Thursday, 22 August 2013 10:50 TE Connectivity is a world leader in connectivity-the $13 billion global company designs and manufactures more than 500,000 different electronic connectivity products for the automotive, energy, industrial, broadband communications, consumer device, healthcare, aerospace, and defense industries. TE Connectivity has a long-standing commitment to innovation and engineering

  11. TE Connectivity Finds Answers in Tomography

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    TE Connectivity Finds Answers in Tomography TE Connectivity Finds Answers in Tomography Print Thursday, 22 August 2013 10:50 TE Connectivity is a world leader in connectivity-the $13 billion global company designs and manufactures more than 500,000 different electronic connectivity products for the automotive, energy, industrial, broadband communications, consumer device, healthcare, aerospace, and defense industries. TE Connectivity has a long-standing commitment to innovation and engineering

  12. Materials Data on Bi2TeSe2 (SG:166) by Materials Project

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Kristin Persson

    2014-11-02

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  13. Materials Data on TeSeO4 (SG:9) by Materials Project

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Kristin Persson

    2014-11-02

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  14. Materials Data on Sb2Te2Se (SG:166) by Materials Project

    SciTech Connect (OSTI)

    Kristin Persson

    2015-02-09

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  15. CdSe/ZnSe quantum dot with a single Mn{sup 2+} ionA new system for a single spin manipulation

    SciTech Connect (OSTI)

    Smole?ski, T.

    2015-03-21

    We present a magneto-optical study of individual self-assembled CdSe/ZnSe quantum dots doped with single Mn{sup 2+} ions. Properties of the studied dots are analyzed analogously to more explored system of Mn-doped CdTe/ZnTe dots. Characteristic sixfold splitting of the neutral exciton emission line as well as its evolution in the magnetic field are described using a spin Hamiltonian model. Dynamics of both exciton recombination and Mn{sup 2+} spin relaxation are extracted from a series of time-resolved experiments. Presence of a single dopant is shown not to affect the average excitonic lifetime measured for a number of nonmagnetic and Mn-doped dots. On the other hand, non-resonant pumping is demonstrated to depolarize the Mn{sup 2+} spin in a quantum dot placed in external magnetic field. This effect is utilized to determine the ion spin relaxation time in the dark.

  16. Resources-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Resources This webpage is provided for legacy archive purposes only, as of 30 April 2015. However, the facilities and resources created under PHaSE (thanks to the support of the U.S. Department of Energy) remain available for their original purpose of investigating organic-based electronic materials. Resources As a national and regional center of excellence for energy research, PHaSE has access to many resources linked from the Department of Energy and the greater UMass Amherst campus, as well

  17. Structural phase transitions in Bi2Se3 under high pressure

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yu, Zhenhai; Gu, Genda; Wang, Lin; Hu, Qingyang; Zhao, Jinggeng; Yan, Shuai; Yang, Ke; Sinogeikin, Stanislav; Mao, Ho -kwang

    2015-11-02

    Raman spectroscopy and angle dispersive X-ray diffraction (XRD) experiments of bismuth selenide (Bi2Se3) have been carried out to pressures of 35.6 and 81.2 GPa, respectively, to explore its pressure-induced phase transformation. The experiments indicate that a progressive structural evolution occurs from an ambient rhombohedra phase (Space group (SG): R-3m) to monoclinic phase (SG: C2/m) and eventually to a high pressure body-centered tetragonal phase (SG: I4/mmm). Evidenced by our XRD data up to 81.2 GPa, the Bi2Se3 crystallizes into body-centered tetragonal structures rather than the recently reported disordered body-centered cubic (BCC) phase. Furthermore, first principles theoretical calculations favor the viewpoint thatmore » the I4/mmm phase Bi2Se3 can be stabilized under high pressure (>30 GPa). Remarkably, the Raman spectra of Bi2Se3 from this work (two independent runs) are still Raman active up to ~35 GPa. Furthermore, it is worthy to note that the disordered BCC phase at 27.8 GPa is not observed here. The remarkable difference in atomic radii of Bi and Se in Bi2Se3 may explain why Bi2Se3 shows different structural behavior than isocompounds Bi2Te3 and Sb2Te3.« less

  18. News-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    News and Highlights Saxony This page shows highlights and news items about PHaSE activities, research achievements, and people; archived items can be accessed by year at the menu to the left. If you have questions about any items, or want to know more, please contact either Tom Russell or D. Venkataraman. Final archive date: 26 April

  19. Recycling of CdTe photovoltaic waste

    DOE Patents [OSTI]

    Goozner, Robert E.; Long, Mark O.; Drinkard, Jr., William F.

    1999-01-01

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate and electrolyzing the leachate to separate Cd from Te, wherein the Te is deposits onto a cathode while the Cd remains in solution.

  20. TE Connectivity Finds Answers in Tomography

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    healthcare, aerospace, and defense industries. TE Connectivity has a long-standing commitment to innovation and engineering excellence. Their products help address challenges...

  1. Graphene/CdTe heterostructure solar cell and its enhancement with photo-induced doping

    SciTech Connect (OSTI)

    Lin, Shisheng Chen, Hongsheng; Li, Xiaoqiang; Zhang, Shengjiao; Wang, Peng; Xu, Zhijuan; Zhong, Huikai; Wu, Zhiqian

    2015-11-09

    We report a type of solar cell based on graphene/CdTe Schottky heterostructure, which can be improved by surface engineering as graphene is atomic thin. By coating a layer of ultrathin CdSe quantum dots onto graphene/CdTe heterostructure, the power conversion efficiency is increased from 2.08% to 3.10%. Photo-induced doping is mainly accounted for this enhancement, as evidenced by field effect transport, Raman, photoluminescence, and quantum efficiency measurements. This work demonstrates a feasible way of improving the performance of graphene/semiconductor heterostructure solar cells by combining one dimensional with two dimensional materials.

  2. Te

    U.S. Energy Information Administration (EIA) Indexed Site

    U t a h I d a h o C a l i f o r n i a N e v a d a O r e g o n A r i z o n a I o w a K a n s a s C o l o r a d o W y o m i n g S o n o r a N e w M e x i c o M i n n e s o t a N e b ...

  3. Te

    U.S. Energy Information Administration (EIA) Indexed Site

    ... Incluye tecnologas de almacenamiento de energa, vapor comprado, calor residual no atribuido directamente a una fuente de combustible y combustibles derivados de llantas. ...

  4. Te

    U.S. Energy Information Administration (EIA) Indexed Site

    ... Refining Company Lp 31 Countrymark Cooperative Inc 66 Marathon Petroleum Co Lp 101 Santa Maria Refining Company 136 Western Refining Southwest Inc 32 Cross Oil Refining & ...

  5. CdTe devices and method of manufacturing same

    DOE Patents [OSTI]

    Gessert, Timothy A.; Noufi, Rommel; Dhere, Ramesh G.; Albin, David S.; Barnes, Teresa; Burst, James; Duenow, Joel N.; Reese, Matthew

    2015-09-29

    A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

  6. High performance Zintl phase TE materials with embedded nanoparticles...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Zintl phase TE materials with embedded nanoparticles High performance Zintl phase TE materials with embedded nanoparticles Performance of zintl phase thermoelectric ...

  7. I2SE | Open Energy Information

    Open Energy Info (EERE)

    I2SE Jump to: navigation, search Name: I2SE Place: Leipzig, Germany Zip: 4103 Sector: Efficiency Product: IT company providing solutions for energy efficiency and data...

  8. SE Project Srl | Open Energy Information

    Open Energy Info (EERE)

    search Name: SE Project Srl Place: San Pietro, Italy Zip: 35010 Sector: Solar Product: Italian manufacturer and supplier of solar modules and solar technology. References: SE...

  9. Role of chalcogen vapor annealing in inducing bulk superconductivity in Fe1+yTe1-xSex [How does annealing in chalcogen vapor induce superconductivity in Fe1+yTe-xSex?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lin, Wenzhi; Ganesh, P.; Gianfrancesco, Anthony; Wang, Jun; Berlijn, Tom; Maier, Thomas A.; Kalinin, Sergei V.; Sales, Brian C.; Pan, Minghu

    2015-02-01

    Recent investigations have shown that Fe1+yTe1-xSex can be made superconducting by annealing it in Se and O vapors. The current lore is that these chalcogen vapors induce superconductivity by removing the magnetic excess Fe atoms. To investigate this phenomenon we performed a combination of magnetic susceptibility, specific heat and transport measurements together with scanning tunneling microscopy and spectroscopy and density functional theory calculations on Fe1+yTe1-xSex treated with Te vapor. We conclude that the main role of the Te vapor is to quench the magnetic moments of the excess Fe atoms by forming FeTem (m ≥ 1) complexes. We show thatmore » the remaining FeTem complexes are still damaging to the superconductivity and therefore that their removal potentially could further improve superconductive properties in these compounds.« less

  10. High Compositional Homogeneity of CdTexSe1-x Crystals Grown by the Bridgman Method

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Hossain, A.; Lee, K.; Lee, W.; Tappero, R.; Yang, G.; Gul, R.; et al

    2015-02-03

    We obtained high-quality CdTexSe1-x (CdTeSe) crystals from ingots grown by the vertical Bridgman technique. The compositional uniformity of the ingots was evaluated by X-ray fluorescence at BNL’s National Synchrotron Light Source X27A beam line. The resulting compositional homogeneity was highly uniform throughout the ingot, and the effective segregation coefficient of Se was ~1.0. This uniformity offers potential opportunity to enhance the yield of the materials for both infrared substrate and radiation-detector applications, so greatly lowering the cost of production and also offering us the prospect to grow large-diameter ingots for use as large-area substrates and for producing higher efficiency gamma-raymore » detectors. The concentration of secondary phases was found to be much lower, by eight- to ten fold compared to that of conventional CdxZn1-xTe (CdZnTe or CZT).« less

  11. Superconductivity in strong spin orbital coupling compound Sb2Se3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kong, P. P.; Sun, F.; Xing, L. Y.; Zhu, J.; Zhang, S. J.; Li, W. M.; Liu, Q. Q.; Wang, X. C.; Feng, S. M.; Yu, X. H.; et al

    2014-10-20

    Recently, A2B3 type strong spin orbital coupling compounds such as Bi2Te3, Bi2Se3 and Sb2Te3 were theoretically predicated to be topological insulators and demonstrated through experimental efforts. The counterpart compound Sb2Se3 on the other hand was found to be topological trivial, but theoretical studies indicated that the pressure might induce Sb2Se3 into a topological nontrivial state. We report on the discovery of superconductivity in Sb2Se3 single crystal induced via pressure. Our experiments indicated that Sb2Se3 became superconductive at high pressures above 10 GPa proceeded by a pressure induced insulator to metal like transition at ~3 GPa which should be related tomore » the topological quantum transition. The superconducting transition temperature (TC) increased to around 8.0 K with pressure up to 40 GPa while it keeps ambient structure. As a result, high pressure Raman revealed that new modes appeared around 10 GPa and 20 GPa, respectively, which correspond to occurrence of superconductivity and to the change of TC slop as the function of high pressure in conjunction with the evolutions of structural parameters at high pressures.« less

  12. Recycling of CdTe photovoltaic waste

    DOE Patents [OSTI]

    Goozner, Robert E.; Long, Mark O.; Drinkard, Jr., William F.

    1999-04-27

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base.

  13. Recycling of CdTe photovoltaic waste

    DOE Patents [OSTI]

    Goozner, R.E.; Long, M.O.; Drinkard, W.F. Jr.

    1999-04-27

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base. 3 figs.

  14. Thermodynamic and Transport Properties of YTe3, LaTe3 and CeTe3

    SciTech Connect (OSTI)

    Ru, N.

    2011-08-19

    Measurements of heat capacity, susceptibility, and electrical resistivity are presented for single crystals of the charge density wave compounds YTe{sub 3}, LaTe{sub 3}, and CeTe{sub 3}. The materials are metallic to low temperatures, but have a small density of states due to the charge density wave gapping large portions of the Fermi surface. CeTe{sub 3} is found to be a weak Kondo lattice, with an antiferromagnetic ground state and T{sub N} = 2.8 K. The electrical resistivity of all three compounds is highly anisotropic, confirming the weak dispersion perpendicular to Te planes predicted by band structure calculations.

  15. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  16. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for

    Office of Scientific and Technical Information (OSTI)

    Room-temperature Nuclear Radiation Detectors (Journal Article) | SciTech Connect Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors Citation Details In-Document Search Title: Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that

  17. Efficiency, Cost and Weight Trade-off in TE Power Generation...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    TE Materials with Embedded Particles High performance Zintl phase TE materials with embedded nanoparticles High performance Zintl phase TE materials with embedded nanoparticles

  18. Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Zhao, Xin-Hao; Campbell, Calli M.; DiNezza, Michael J.; Liu, Shi; Zhao, Yuan; Zhang, Yong-Hang

    2014-12-22

    The bulk Shockley-Read-Hall carrier lifetime of CdTe and interface recombination velocity at the CdTe/Mg{sub 0.24}Cd{sub 0.76}Te heterointerface are estimated to be around 0.5??s and (4.7??0.4)??10{sup 2?}cm/s, respectively, using time-resolved photoluminescence (PL) measurements. Four CdTe/MgCdTe double heterostructures (DHs) with varying CdTe layer thicknesses were grown on nearly lattice-matched InSb (001) substrates using molecular beam epitaxy. The longest lifetime of 179?ns is observed in the DH with a 2??m thick CdTe layer. It is also shown that the photon recycling effect has a strong influence on the bulk radiative lifetime, and the reabsorption process affects the measured PL spectrum shape and intensity.

  19. Q Cells SE | Open Energy Information

    Open Energy Info (EERE)

    Name: Q-Cells SE Place: Thalheim, Brandenburg, Germany Zip: 6766 Product: German PV cell manufacturer; also makes strategic venture capital and corporate investments....

  20. Facilities-Resources-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Facilities Glove box photo UMass Amherst PHaSE EFRC participants and collaborators have access to the main Photovoltaic & Optical Spectroscopy Facility in Conte B523524 and its...

  1. Oxidation of ultrathin GaSe

    SciTech Connect (OSTI)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  2. Oxidation of ultrathin GaSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  3. Templates-Resources-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    templates 36 inch high by 48 inch wide, landscape poster template with PHaSE acknowledgements (PPT file download) 36 inch high by 48 inch wide, landscape poster template with PHaSE acknowledgements, 12-panel layout (typical pattern used by UMass PSE) (PPT file download) 42 inch high by 48 inch wide, landscape poster template with PHaSE acknowledgements (PPT file download) 36 inch high by 48 inch wide, portrait poster template with PHaSE acknowledgements (PPT file download) 16:9 Slide Templates

  4. Advanced Precursor Reaction Processing for Cu(InGa)(SeS)2 Solar Cells

    SciTech Connect (OSTI)

    Shafarman, William N.

    2015-10-12

    This project “Advanced Precursor Reaction Processing for Cu(InGa)(SeS)2 Solar Cells”, completed by the Institute of Energy Conversion (IEC) at the University of Delaware in collaboration with the Department of Chemical Engineering at the University of Florida, developed the fundamental understanding and technology to increase module efficiency and improve the manufacturability of Cu(InGa)(SeS)2 films using the precursor reaction approach currently being developed by a number of companies. Key results included: (1) development of a three-step H2Se/Ar/H2S reaction process to control Ga distribution through the film and minimizes back contact MoSe2 formation; (2) Ag-alloying to improve precursor homogeneity by avoiding In phase agglomeration, faster reaction and improved adhesion to allow wider reaction process window; (3) addition of Sb, Bi, and Te interlayers at the Mo/precursor junction to produce more uniform precursor morphology and improve adhesion with reduced void formation in reacted films; (4) a precursor structure containing Se and a reaction process to reduce processing time to 5 minutes and eliminate H2Se usage, thereby increasing throughput and reducing costs. All these results were supported by detailed characterization of the film growth, reaction pathways, thermodynamic assessment and device behavior.

  5. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals...

    Office of Scientific and Technical Information (OSTI)

    temperature gradient, we observed the migration of Te inclusions from a low-temperature ... These results show that the migration, diffusion, and reaction of Te with Cd in the matrix ...

  6. Effect and optimization of CdS/CdTe interdiffusion on CdTe electrical properties and CdS/CdTe cell performance

    SciTech Connect (OSTI)

    Song, W.; Mao, D.; Kaydanov, V.; Ohno, T.R.; Trefny, J.V.; Levi, D.H.; Johnston, S. McCandless, B.E.

    1999-03-01

    We have investigated the effect of the CdS/CdTe interdiffusion on the properties of the CdTe films and the CdS/CdTe cell performance. Sulfur (S) diffusion into the CdTe films leads to a decreased defect density in the films, improvement of cell performance, and possibly to the increase of the carrier lifetime in the films. Cell performance is improved with the increase of the amount of S in the CdTe films. S diffusion into CdTe also deteriorates the uniformity of the CdS window layers, resulting in worse cell performance. Based on this study, we propose a processing method to improve cell performance. {copyright} {ital 1999 American Institute of Physics.}

  7. Superconductivity in strong spin orbital coupling compound Sb2Se3

    SciTech Connect (OSTI)

    Kong, P. P.; Sun, F.; Xing, L. Y.; Zhu, J.; Zhang, S. J.; Li, W. M.; Liu, Q. Q.; Wang, X. C.; Feng, S. M.; Yu, X. H.; Zhu, J. L.; Yu, R. C.; Yang, W. G.; Shen, G. Y.; Zhao, Y. S.; Ahuja, R.; Mao, H. K.; Jin, C. Q.

    2014-10-20

    Recently, A2B3 type strong spin orbital coupling compounds such as Bi2Te3, Bi2Se3 and Sb2Te3 were theoretically predicated to be topological insulators and demonstrated through experimental efforts. The counterpart compound Sb2Se3 on the other hand was found to be topological trivial, but theoretical studies indicated that the pressure might induce Sb2Se3 into a topological nontrivial state. We report on the discovery of superconductivity in Sb2Se3 single crystal induced via pressure. Our experiments indicated that Sb2Se3 became superconductive at high pressures above 10 GPa proceeded by a pressure induced insulator to metal like transition at ~3 GPa which should be related to the topological quantum transition. The superconducting transition temperature (TC) increased to around 8.0 K with pressure up to 40 GPa while it keeps ambient structure. As a result, high pressure Raman revealed that new modes appeared around 10 GPa and 20 GPa, respectively, which correspond to occurrence of superconductivity and to the change of TC slop as the function of high pressure in conjunction with the evolutions of structural parameters at high pressures.

  8. Contact Us-About-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    contact us The following information is for legacy archival purposes only, as of 30 April 2015! PHaSE EFRC Main Office Conte Research Center A515 (area code=413) Phone 413-577-0041, FAX 413-545-1510 Thomas P. Russell (Conte A515) Polymer Science & Engineering PHaSE EFRC Co-Director 577-1516 Paul M. Lahti (Goessmann 141) Chemistry PHaSE EFRC Co-Director 545-4890 Volodimyr Duzhko (Conte A529) Facility Director Photovoltaic Facility Director 577-0902 External Advisory Board Members Gui Bazan

  9. SE Drive Technik | Open Energy Information

    Open Energy Info (EERE)

    Drive Technik Jump to: navigation, search Name: SE Drive Technik Place: Bochum, Germany Zip: 44791 Product: Germany-based R&D subsidiary of Indian turbine maker Suzlon. References:...

  10. 2013 Archives-News-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3 Archives Volodimyr Duzhko photo Volodimyr Duzhko promoted to (extension) Assistant Professor of Polymer Science & Engineering. PHaSE is pleased to announce that Facility Director Dr. Volodimyr Duzhko has been promoted to extension Assistant Professor of Polymer Science & Engineering. Volodimyr is a semiconductor physicist with considerable experience in polymer materials. Since joining PHaSE, he has trained over 70 people to use 10 instruments in the Photovoltaic & Optical

  11. New chalcogenide glasses in the CdTe-AgI-As{sub 2}Te{sub 3} system

    SciTech Connect (OSTI)

    Kassem, M.; Le Coq, D.; Boidin, R.; Bychkov, E.; ULCO, LPCA, EA 4493, F-59140 Dunkerque

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Determination of the glass-forming region in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system. Black-Right-Pointing-Pointer Characterization of macroscopic properties of the new CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Characterization of the total conductivity of CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Comparison between the selenide and telluride equivalent systems. -- Abstract: Chalcogenide glasses in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system were synthesized and the glass-forming range was determined. The maximum content of CdTe in this glass system was found to be equal to 15 mol.%. The macroscopic characterizations of samples have consisted in Differential Scanning Calorimetry, density, and X-ray diffraction measurements. The cadmium telluride addition does not generate any significant change in the glass transition temperature but the resistance of binary AgI-As{sub 2}Te{sub 3} glasses towards crystallisation is estimated to be decreasing on the base of {Delta}T = T{sub x} - T{sub g} parameter. The total electrical conductivity {sigma} was measured by complex impedance spectroscopy. First, the CdTe additions in the (AgI){sub 0.5}(As{sub 2}Te{sub 3}){sub 0.5} host glass, (CdTe){sub x}(AgI){sub 0.5-x/2}(As{sub 2}Te{sub 3}){sub 0.5-x/2} lead to a conductivity decrease at x {<=} 0.05. Then, the behaviour is reversed at 0.05 {<=} x {<=} 0.15. The obtained results are discussed by comparison with the equivalent selenide system.

  12. Nanoscale structure in AgSbTe2 determined by diffuse elastic neutron scattering

    SciTech Connect (OSTI)

    Specht, Eliot D [ORNL; Ma, Jie [ORNL; Delaire, Olivier A [ORNL; Budai, John D [ORNL; May, Andrew F [ORNL; Karapetrova, Evguenia A. [Argonne National Laboratory (ANL)

    2015-01-01

    Diffuse elastic neutron scattering measurements confirm that AgSbTe2 has a hierarchical structure, with defects on length scales from nanometers to microns. While scattering from mesoscale structure is consistent with previously-proposed structures in which Ag and Sb order on a NaCl lattice, more diffuse scattering from nanoscale structure suggests a structural rearrangement in which hexagonal layers form a combination of (ABC), (ABA), and (AAB) stacking sequences. The AgCrSe2 structure is the best-fitting model for the local atomic arrangements.

  13. A transferable force field for CdS-CdSe-PbS-PbSe solid systems

    SciTech Connect (OSTI)

    Fan, Zhaochuan; Vlugt, Thijs J. H.; Koster, Rik S.; Fang, Changming; Huis, Marijn A. van; Wang, Shuaiwei; Yalcin, Anil O.; Tichelaar, Frans D.; Zandbergen, Henny W.

    2014-12-28

    A transferable force field for the PbSe-CdSe solid system using the partially charged rigid ion model has been successfully developed and was used to study the cation exchange in PbSe-CdSe heteronanocrystals [A. O. Yalcin et al., Atomic resolution monitoring of cation exchange in CdSe-PbSe heteronanocrystals during epitaxial solid-solid-vapor growth, Nano Lett. 14, 36613667 (2014)]. In this work, we extend this force field by including another two important binary semiconductors, PbS and CdS, and provide detailed information on the validation of this force field. The parameterization combines Bader charge analysis, empirical fitting, and ab initio energy surface fitting. When compared with experimental data and density functional theory calculations, it is shown that a wide range of physical properties of bulk PbS, PbSe, CdS, CdSe, and their mixed phases can be accurately reproduced using this force field. The choice of functional forms and parameterization strategy is demonstrated to be rational and effective. This transferable force field can be used in various studies on II-VI and IV-VI semiconductor materials consisting of CdS, CdSe, PbS, and PbSe. Here, we demonstrate the applicability of the force field model by molecular dynamics simulations whereby transformations are initiated by cation exchange.

  14. Benefits of Carrier Pocket Anisotropy to Thermoelectric Performance: The case of p-type AgBiSe2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Parker, David S; May, Andrew F; Singh, David J

    2015-01-01

    We study theoretically the effects of anisotropy on the thermoelectric performance of p-type AgBiSe2. We present an apparent realization of the thermoelectric benefits of one-dimensional plate-like carrier pocket anisotropy in the valence band of this material. Based on first principles calculations we find a substantial anisotropy in the electronic structure, likely favorable for thermoelectric performance, in the valence bands of the hexagonal phase of the silver chalcogenide thermoelectric AgBiSe2, while the conduction bands are more isotropic, and in our experiments do not attain high performance. AgBiSe2 has already exhibited a ZT value of 1.5 in a high-temperature disordered fcc phase,more » but room-temperature performance has not been demonstrated. We develop a theory for the ability of anisotropy to decouple the density-of-states and conductivity effective masses, pointing out the influence of this effect in the high performance thermoelectrics Bi2Te3 and PbTe. From our first principles and Boltzmann transport calculations we find that p-type AgBiSe2 has substantial promise as a room temperature thermoelectric, and estimate its performance.« less

  15. Benefits of Carrier Pocket Anisotropy to Thermoelectric Performance: The case of p-type AgBiSe2

    SciTech Connect (OSTI)

    Parker, David S; May, Andrew F; Singh, David J

    2015-01-01

    We study theoretically the effects of anisotropy on the thermoelectric performance of p-type AgBiSe2. We present an apparent realization of the thermoelectric benefits of one-dimensional plate-like carrier pocket anisotropy in the valence band of this material. Based on first principles calculations we find a substantial anisotropy in the electronic structure, likely favorable for thermoelectric performance, in the valence bands of the hexagonal phase of the silver chalcogenide thermoelectric AgBiSe2, while the conduction bands are more isotropic, and in our experiments do not attain high performance. AgBiSe2 has already exhibited a ZT value of 1.5 in a high-temperature disordered fcc phase, but room-temperature performance has not been demonstrated. We develop a theory for the ability of anisotropy to decouple the density-of-states and conductivity effective masses, pointing out the influence of this effect in the high performance thermoelectrics Bi2Te3 and PbTe. From our first principles and Boltzmann transport calculations we find that p-type AgBiSe2 has substantial promise as a room temperature thermoelectric, and estimate its performance.

  16. 2011 Archives-News-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1 Archives solar cells video clip Solar Cells from Plastics? Mission Possible at the PHaSE energy research center, UMass Amherst!, a YouTube video about work at PHaSE, debuted on 24 March 2011. This video is part of our center's contributions to the Energy Frontier Research Centers Summit & Forum on 25-27 May 2011, which is further described below. Many thanks to Harihara Venkatraman (DV group, ERG 1) and Dr. Emily Pentzer (Emrick group, ERG 1) for starring in the video clip, along with

  17. Structural phase transitions in Bi2Se3 under high pressure

    SciTech Connect (OSTI)

    Yu, Zhenhai; Gu, Genda; Wang, Lin; Hu, Qingyang; Zhao, Jinggeng; Yan, Shuai; Yang, Ke; Sinogeikin, Stanislav; Mao, Ho -kwang

    2015-11-02

    Raman spectroscopy and angle dispersive X-ray diffraction (XRD) experiments of bismuth selenide (Bi2Se3) have been carried out to pressures of 35.6 and 81.2 GPa, respectively, to explore its pressure-induced phase transformation. The experiments indicate that a progressive structural evolution occurs from an ambient rhombohedra phase (Space group (SG): R-3m) to monoclinic phase (SG: C2/m) and eventually to a high pressure body-centered tetragonal phase (SG: I4/mmm). Evidenced by our XRD data up to 81.2 GPa, the Bi2Se3 crystallizes into body-centered tetragonal structures rather than the recently reported disordered body-centered cubic (BCC) phase. Furthermore, first principles theoretical calculations favor the viewpoint that the I4/mmm phase Bi2Se3 can be stabilized under high pressure (>30 GPa). Remarkably, the Raman spectra of Bi2Se3 from this work (two independent runs) are still Raman active up to ~35 GPa. Furthermore, it is worthy to note that the disordered BCC phase at 27.8 GPa is not observed here. The remarkable difference in atomic radii of Bi and Se in Bi2Se3 may explain why Bi2Se3 shows different structural behavior than isocompounds Bi2Te3 and Sb2Te3.

  18. Luminosity goals for a 100-TeV pp collider

    SciTech Connect (OSTI)

    Hinchliffe, Ian; Kotwal, Ashutosh; Mangano, Michelangelo L.; Quigg, Chris; Wang, Lian-Tao

    2015-04-23

    We consider diverse examples of science goals that provide a framework to assess luminosity goals for a future 100-TeV proton-proton collider.

  19. Luminosity goals for a 100-TeV pp collider

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hinchliffe, Ian; Kotwal, Ashutosh; Mangano, Michelangelo L.; Quigg, Chris; Wang, Lian-Tao

    2015-08-20

    We consider diverse examples of science goals that provide a framework to assess luminosity goals for a future 100-TeV proton-proton collider.

  20. High Performance Zintl Phase TE Materials with Embedded Particles...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Presents results from embedding nanoparticles in magnesium silicide alloy matrix ... Zintl Phase Materials with Embedded Nanoparticles High performance Zintl phase TE ...

  1. Anisotropy in CdSe quantum rods

    SciTech Connect (OSTI)

    Li, Liang-shi

    2003-09-01

    The size-dependent optical and electronic properties of semiconductor nanocrystals have drawn much attention in the past decade, and have been very well understood for spherical ones. The advent of the synthetic methods to make rod-like CdSe nanocrystals with wurtzite structure has offered us a new opportunity to study their properties as functions of their shape. This dissertation includes three main parts: synthesis of CdSe nanorods with tightly controlled widths and lengths, their optical and dielectric properties, and their large-scale assembly, all of which are either directly or indirectly caused by the uniaxial crystallographic structure of wurtzite CdSe. The hexagonal wurtzite structure is believed to be the primary reason for the growth of CdSe nanorods. It represents itself in the kinetic stabilization of the rod-like particles over the spherical ones in the presence of phosphonic acids. By varying the composition of the surfactant mixture used for synthesis we have achieved tight control of the widths and lengths of the nanorods. The synthesis of monodisperse CdSe nanorods enables us to systematically study their size-dependent properties. For example, room temperature single particle fluorescence spectroscopy has shown that nanorods emit linearly polarized photoluminescence. Theoretical calculations have shown that it is due to the crossing between the two highest occupied electronic levels with increasing aspect ratio. We also measured the permanent electric dipole moment of the nanorods with transient electric birefringence technique. Experimental results on nanorods with different sizes show that the dipole moment is linear to the particle volume, indicating that it originates from the non-centrosymmetric hexagonal lattice. The elongation of the nanocrystals also results in the anisotropic inter-particle interaction. One of the consequences is the formation of liquid crystalline phases when the nanorods are dispersed in solvent to a high enough concentration. The preparation of the stable liquid crystalline solution of CdSe nanorods is described, as well as the large-scale alignment of the nanorods by taking advantage of the long-range orientational correlation in the liquid crystals. In addition, we investigated the phase diagram of the nanorod solution, as a step toward understanding the possible role of the long-range attractive interaction between the nanorods in the formation of lyotropic liquid crystals.

  2. Copper migration in CdTe heterojunction solar cells

    SciTech Connect (OSTI)

    Chou, H.C.; Rohatgi, A.; Jokerst, N.M.; Thomas, E.W.; Kamra, S.

    1996-07-01

    CdTe solar cells were fabricated by depositing a Au/Cu contact with Cu thickness in the range of 50 to 150A on polycrystalline CdTe/CdS/SnO{sub 2} glass structures. The increase in Cu thickness improves ohmic contact and reduces series resistance (R{sub s}), but the excess Cu tends to diffuse into CdTe and lower shunt resistance (R{sub sh}) and cell performance. Light I-V and secondary ion mass spectroscopy (SIMS) measurements were performed to understand the correlations between the Cu contact thickness, the extent of Cu incorporation in the CdTe cells, and its impact on the cell performance. The CdTe/CdS/SnO{sub 2} glass, CdTe/CdS/GaAs, and CdTe/GaAs structures were prepared in an attempt to achieve CdTe films with different degrees of crystallinity and grain size. A large grain polycrystalline CdTe thin film solar cell was obtained for the first time by selective etching the GaAs substrate coupled with the film transfer onto a glass substrate. SIMS measurement showed that poor crystallinity and smaller grain size of the CdTe film promotes Cu diffusion and decreases the cell performance. Therefore, grain boundaries are the main conduits for Cu migration and larger CdTe grain size or alternate method of contact formation can mitigate the adverse effect of Cu and improve the cell performance. 15 refs., 1 fig.,6 tabs.

  3. UMass-Resources-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    UMass Resources UMass logo The following links provide information about important local (UMass Amherst) campus and departmental offices and resources, including major interdepartmental research centers that pursue work closely akin to research that was initiated or expanded under PHaSE. The last four links go to sites with energy or research news of potential interest to scientists interested in organic electronic materails. Major UMass User Facilities Vice-Chancellor for Research UMass

  4. EFRC Resources-Resources-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    EFRC Resources EFRC map Last update 30 April 2015. The following links mostly provide information about accessing specialty equipment and the main instrument facilities that were created by PHaSE during 2009-2015. The last three links guide readers to information that is useful to anyone seriously interested in photovoltaics. Photovoltaic & Spectroscopy Facility Specialty Equipment for Electronic Materials Facility User Reservation Site NREL AM1.5 Solar Radiance Standard NREL Solar Cell

  5. Organization-About-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    About Mission Statement (PDF) Organization Contact Us organization This webpage is provided for legacy archive purposes only, as of 30 April 2015. The day to day operations of the University of Massachusetts Amherst PHaSE EFRC are administered by co-directors. Russell is the Samuel Conte Distingushed Professor of Polymer Science and Engineering, with years of previous experience at IBM Research, over 620 publications and 21 patents for polymer chemistry and physics. Lahti has over 29 years at

  6. 2010 Archives-News-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    0 Archives PHaSE welcomes Dr. Lawrence Friedman as our new Managing Director. Larry comes to us with strong backgrounds in both academic and industrial experience. He is well acquainted with UMass Amherst from his time at Bayer Materials Science, where he was much involved in doctoral level recruiting and in academic/industrial liaison work as Head of University Relations. Before this, he was at Polaroid doing work in flims research as a manager and senior scientist. His academic credentials

  7. 2013 Archives-News-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4 Archives PHaSE EFRC work was featured in an MRS-TV video production, UMASS Amherst -- Optimal Design: Interdisciplinary Teamwork from Synthesis to Production, that was highlighted on electronic signage throughout the Fall 2014 Boston Materials Research Society meeting. Major vignettes were shown from Maroudas group, DV group, Emrick group. Both faculty and undergraduates/graduates/postdocs described EFRC work and work being carried out by closely allied groups interested in energy-related

  8. High performance Zintl phase TE materials with embedded nanoparticles |

    Broader source: Energy.gov (indexed) [DOE]

    Department of Energy Performance of zintl phase thermoelectric materials with embedded particles are evaluated PDF icon shakouri.pdf More Documents & Publications High performance Zintl phase TE materials with embedded nanoparticles High Performance Zintl Phase TE Materials with Embedded Particles Thermoelectrics Partnership: High Performance Thermoelectric Waste Heat Recovery System Based on Zintl Phase Materials with Embedded Nanoparticles

  9. ETA-NAC007 - Control of Measuring and Test Equipment (M&TE)

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Control of Measuring and Test Equipment (M&TE) Prepared by Electric Transportation ... of calibration standards and Measuring and Test Equipment (M&TE) used for measuring, ...

  10. ETA-UAC07 - Control of Measuring and Test Equipment (M&TE)

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    "Control of Measuring and Test Equipment (M&TE)" Prepared by Electric Transportation ... of calibration standards and Measuring and Test Equipment (M&TE) used for measuring, ...

  11. Thermoelectric device including an alloy of GeTe and AgSbTe as the P-type element

    DOE Patents [OSTI]

    Skrabek, Emanuel Andrew; Trimmer, Donald Smith

    1976-01-01

    Improved alloys suitable for thermoelectric applications and having the general formula: (AgSbTe.sub.2).sub.1.sub.-x + (GeTe).sub.x wherein x has a value of about 0.80 and 0.85, have been found to possess unexpectedly high thermoelectric properties such as efficiency index, as well as other improved physical properties.

  12. Multiband Te p Based Superconductivity of Ta4Pd3Te16

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Singh, David J.

    2014-10-06

    We recently discovered that Ta4Pd3Te16 is a superconductor that has been suggested to be an unconventional superconductor near magnetism. Here, we report electronic structure calculations showing that despite the layered crystal structure the material is an anisotropic three-dimensional (3D) metal. The Fermi surface contains prominent one-dimensional (1D) and two-dimensional (2D) features, including nested 1D sheets, a 2D cylindrical section, and a 3D sheet. Moreover, the electronic states that make up the Fermi surface are mostly derived from Te p states with small Ta d and Pd d contributions. This places the compound far from magnetic instabilities. The results are discussedmore » in terms of multiband superconductivity.« less

  13. 2009 Archives-News-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    09 Archives U.S. DOE Announces Energy Frontier Research Centers (08/2009) UMass Amherst EFRC Proposal (08/2009) EFRC Funding Distributed to Successful Centers (08/2009) PHaSE co-director Paul Lahti led off a set of presentations organized by the UMass Amherst Research & Liaison office to meet with a delegation of scientists from various technical research centers of the Gipuzkoa province in the Basque region of northern Spain. The delegation was organized through the Tecnalia Corporation,

  14. 2012 Archives-News-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2 Archives Tom Russell photo Joint work by Tom Russell, Alex Briseno, and coworkers describes fabrication and a significant degree of device optimization of a low band polymer pDPP/PCBM solar cell, in an article published in Advanced Materials. Photoconversion efficiency up to 5.6% with a fill factor of 60% were obtained. Morphology control based on solvent mixture tuning was critically important for best electrical output. [read more] PHaSE members D. Venkataraman and Tom Russell have edited a

  15. Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films

    DOE Patents [OSTI]

    Gessert, T.A.

    1999-06-01

    A method of is disclosed improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurium-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact. 11 figs.

  16. Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films

    DOE Patents [OSTI]

    Gessert, Timothy A.

    1999-01-01

    A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

  17. Haier: Compromise Agreement (2011-SE-1428) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Compromise Agreement (2011-SE-1428) Haier: Compromise Agreement (2011-SE-1428) April 23, 2013 DOE and Haier America Trading, LLC entered into a Compromise Agreement to resolve a ...

  18. SeQuential Pacific Biodiesel LLC | Open Energy Information

    Open Energy Info (EERE)

    Pacific Biodiesel LLC Jump to: navigation, search Name: SeQuential-Pacific Biodiesel LLC Place: Oregon Sector: Biofuels Product: JV between SeQuential Biofuels, Pacific Biodiesel,...

  19. Electrochemically deposited BiTe-based nanowires for thermoelectric applications

    SciTech Connect (OSTI)

    Ng, Inn-Khuan; Kok, Kuan-Ying; Rahman, Che Zuraini Che Ab; Saidin, Nur Ubaidah; Ilias, Suhaila Hani; Choo, Thye-Foo

    2014-02-12

    Nanostructured materials systems such as thin-films and nanowires (NWs) are promising for thermoelectric power generation and refrigeration compared to traditional counterparts in bulk, due to their enhanced thermoelectric figures-of-merit. BiTe and its derivative compounds, in particular, are well-known for their near-room temperature thermoelectric performance. In this work, both the binary and ternary BiTe-based nanowires namely, BiTe and BiSbTe, were synthesized using template-assisted electrodeposition. Diameters of the nanowires were controlled by the pore sizes of the anodised alumina (AAO) templates used. Systematic study on the compositional change as a function of applied potential was carried out via Linear Sweep Voltanmetry (LSV). Chemical compositions of the nanowires were studied using Energy Dispersive X-ray Spectrometry (EDXS) and their microstructures evaluated using diffraction and imaging techniques. Results from chemical analysis on the nanowires indicated that while the Sb content in BiSbTe nanowires increased with more negative deposition potentials, the formation of Te{sup 0} and Bi{sub 2}Te{sub 3} were favorable at more positive potentials.

  20. Process Development for High Voc CdTe Solar Cells

    SciTech Connect (OSTI)

    Ferekides, C. S.; Morel, D. L.

    2011-05-01

    This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

  1. Synthesis and optical study of green light emitting polymer coated CdSe/ZnSe core/shell nanocrystals

    SciTech Connect (OSTI)

    Tripathi, S.K.; Sharma, Mamta

    2013-05-15

    Highlights: ► Synthesis of Polymer coated core CdSe and CdSe/ZnSe core/shell NCs. ► From TEM image, the spherical nature of CdSe and CdSe/ZnSe is obtained. ► Exhibiting green band photoemission peak at 541 nm and 549 nm for CdSe core and CdSe/ZnSe core/shell NCs. ► The shell thickness has been calculated by using superposition of quantum confinement energy model. - Abstract: CdSe/ZnSe Core/Shell NCs dispersed in PVA are synthesized by chemical method at room temperature. This is characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV/Vis spectra and photoluminescence spectroscopy (PL). TEM image shows the spherical nature of CdSe/ZnSe core/shell NCs. The red shift of absorption and emission peak of CdSe/ZnSe core/shell NCs as compared to CdSe core confirmed the formation of core/shell. The superposition of quantum confinement energy model is used for calculation of thickness of ZnSe shell.

  2. Native defects in MBE-grown CdTe

    SciTech Connect (OSTI)

    Olender, Karolina; Wosinski, Tadeusz; Makosa, Andrzej; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz

    2013-12-04

    Deep-level traps in both n- and p-type CdTe layers, grown by molecular-beam epitaxy on GaAs substrates, have been investigated by means of deep-level transient spectroscopy (DLTS). Four of the traps revealed in the DLTS spectra, which displayed exponential kinetics for capture of charge carriers into the trap states, have been assigned to native point defects: Cd interstitial, Cd vacancy, Te antisite defect and a complex formed of the Te antisite and Cd vacancy. Three further traps, displaying logarithmic capture kinetics, have been ascribed to electron states of treading dislocations generated at the mismatched interface with the substrate and propagated through the CdTe layer.

  3. Extreme solid state refrigeration using nanostructured Bi-Te alloys.

    SciTech Connect (OSTI)

    Lima Sharma, Ana L.; Spataru, Dan Catalin; Medlin, Douglas L.; Sharma, Peter Anand; Morales, Alfredo Martin

    2009-09-01

    Materials are desperately needed for cryogenic solid state refrigeration. We have investigated nanostructured Bi-Te alloys for their potential use in Ettingshausen refrigeration to liquid nitrogen temperatures. These alloys form alternating layers of Bi{sub 2} and Bi{sub 2}Te{sub 3} blocks in equilibrium. The composition Bi{sub 4}Te{sub 3} was identified as having the greatest potential for having a high Ettingshausen figure of merit. Both single crystal and polycrystalline forms of this material were synthesized. After evaluating the Ettingshausen figure of merit for a large, high quality polycrystal, we simulated the limits of practical refrigeration in this material from 200 to 77 K using a simple device model. The band structure was also computed and compared to experiments. We discuss the crystal growth, transport physics, and practical refrigeration potential of Bi-Te alloys.

  4. Summary of the TeV33 working group

    SciTech Connect (OSTI)

    Bagley, P.P.; Bieniosek, F.M.; Colestock, P.

    1996-10-01

    This summary of the TeV33 working group at Snowmass reports on work in the areas of Tevatron store parameters, the beam-beam interaction, Main Injector intensity (slip stacking), antiproton production, and electron cooling.

  5. PVA TePla AG | Open Energy Information

    Open Energy Info (EERE)

    search Name: PVA TePla AG Place: Asslar, Germany Zip: 35614 Product: Supplier of plants and equipment for vacuum systems, crystal-growing systems and plasma systems, some of...

  6. Substrate CdTe Efficiency Improvements - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate CdTe Efficiency Improvements National Renewable Energy Laboratory Contact NREL About This Technology Publications: PDF Document Publication 11-28PCT Application as-published (984 KB) Technology Marketing Summary Thin film solar cells have been the focus of many research facilities in recent years that are working to decrease manufacturing costs and increase cell efficiency. Cadmium telluride (CdTe) has been well recognized as a promising photovoltaic material for thin film solar cells

  7. Phonon self-energy and origin of anomalous neutron scattering spectra in SnTe and PbTe thermoelectrics

    SciTech Connect (OSTI)

    Li, Chen [ORNL] [ORNL; Ma, Jie [ORNL] [ORNL; May, Andrew F [ORNL] [ORNL; Cao, Huibo [ORNL] [ORNL; Christianson, Andrew D [ORNL] [ORNL; Ehlers, Georg [ORNL] [ORNL; Singh, David J [ORNL] [ORNL; Sales, Brian C [ORNL] [ORNL; Delaire, Olivier A [ORNL] [ORNL

    2014-01-01

    The anharmonic lattice dynamics of rock-salt thermoelectric compounds SnTe and PbTe are investigated with inelastic neutron scattering (INS) and first-principles calculations. The experiments show that, surprisingly, although SnTe is closer to the ferroelectric instability, phonon spectra in PbTe exhibit a more anharmonic character. This behavior is reproduced in first-principles calculations of the temperature-dependent phonon self-energy. Our simulations reveal how the nesting of phonon dispersions induces prominent features in the self-energy, which account for the measured INS spectra and their temperature dependence. We establish that the phase-space for three-phonon scattering processes, rather than just the proximity to the lattice instability, is the mechanism determining the complex spectrum of the transverse-optical ferroelectric mode.

  8. Manufacturing technology development for CuInGaSe sub 2 solar cell modules

    SciTech Connect (OSTI)

    Stanbery, B.J. )

    1991-11-01

    The report describes research performed by Boeing Aerospace and Electronics under the Photovoltaic Manufacturing Technology project. We anticipate that implementing advanced semiconductor device fabrication techniques to the production of large-area CuIn{sub 1-x}Ga{sub x}Se{sub 2} (CIGS)/Cd{sub 1-y}Zn{sub y}S/ZnO monolithically integrated thin-film solar cell modules will enable 15% median efficiencies to be achieved in high-volume manufacturing. We do not believe that CuInSe{sub 2} (CIS) can achieve this efficiency in production without sufficient gallium to significantly increase the band gap, thereby matching it better to the solar spectrum (i.e., x{ge}0.2). Competing techniques for CIS film formation have not been successfully extended to CIGS devices with such high band gaps. The SERI-confirmed intrinsic stability of CIS-based photovoltaics renders them far superior to a-Si:H-based devices, making a 30-year module lifetime feasible. The minimal amounts of cadmium used in the structure we propose, compared to CdTe-based devices, makes them environmentally safer and more acceptable to both consumers and relevant regulatory agencies. Large-area integrated thin-film CIGS modules are the product most likely to supplant silicon modules by the end of this decade and enable the cost improvements which will lead to rapid market expansion.

  9. Effects of Cu Diffusion from ZnTe:Cu/Ti Contacts on Carrier Lifetime of CdS/CdTe Thin Film Solar Cells: Preprint

    SciTech Connect (OSTI)

    Gessert, T. A.; Metzger, W. K.; Asher, S. E.; Young, M. R.; Johnston, S.; Dhere, R. G.; Duda, A.

    2008-05-01

    We study the performance of CdS/CdTe thin film PV devices processed with a ZnTe:Cu/Ti contact to investigate how carrier lifetime in the CdTe layer is affected by Cu diffusion from the contact.

  10. SE-72/AS-72 generator system based on Se extraction/ As reextraction

    DOE Patents [OSTI]

    Fassbender, Michael Ernst; Ballard, Beau D

    2013-09-10

    The preparation of a .sup.72Se/.sup.72As radioisotope generator involves forming an acidic aqueous solution of an irradiated alkali bromide target such as a NaBr target, oxidizing soluble bromide in the solution to elemental bromine, removing the elemental bromine, evaporating the resulting solution to a residue, removing hydrogen chloride from the residue, forming an acidic aqueous solution of the residue, adding a chelator that selectively forms a chelation complex with selenium, and extracting the chelation complex from the acidic aqueous solution into an organic phase. As the .sup.72Se generates .sup.72As in the organic phase, the .sup.72As may be extracted repeatedly from the organic phase with an aqueous acid solution.

  11. MgSe/ZnSe/CdSe coupled quantum wells grown on InP substrate with intersubband absorption covering 1.55??m

    SciTech Connect (OSTI)

    Chen, Guopeng; Shen, Aidong; De Jesus, Joel; Tamargo, Maria C.

    2014-12-08

    The authors report the observation of intersubband (ISB) transitions in the optical communication wavelength region in MgSe/ZnSe/CdSe coupled quantum wells (QWs). The coupled QWs were grown on InP substrates by molecular beam epitaxy. By inserting ZnSe layers to compensate the strain, samples with high structural quality were obtained, as indicated by well resolved satellite peaks in high-resolution x-ray diffraction. The observed ISB transition energies agree well with the calculated values.

  12. SE-MA-NO Electric Coop | Open Energy Information

    Open Energy Info (EERE)

    SE-MA-NO Electric Coop Jump to: navigation, search Name: SE-MA-NO Electric Coop Place: Missouri Phone Number: (417) 924-3291 Website: www.semano.com Facebook: https:...

  13. Goodman Manufacturing: Order (2011-SE-4301) | Department of Energy

    Energy Savers [EERE]

    Goodman Manufacturing: Order (2011-SE-4301) Goodman Manufacturing: Order (2011-SE-4301) March 2, 2012 DOE ordered Goodman Manufacturing Company, L.P., to pay a $14,800 civil penalty after finding Goodman had manufactured and distributed in commerce in the U.S. at least 74 units of commercial package air conditioner basic model CPC180*. PDF icon Goodman Manufacturing: Order (2011-SE-4301) More Documents & Publications Goodman Manufacturing: Proposed Penalty (2011-SE-4301) Goodman

  14. Perlick: Order (2013-SE-14001) | Department of Energy

    Energy Savers [EERE]

    Order (2013-SE-14001) Perlick: Order (2013-SE-14001) May 14, 2015 DOE ordered Perlick Corporation to pay a $168,200 civil penalty after finding Perlick had manufactured and distributed in commerce in the U.S. 841 units of basic model HP24F, a noncompliant freezer. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Perlick. PDF icon Perlick: Order (2013-SE-14001) More Documents & Publications Perlick: Proposed Penalty (2013-SE-14001) Perlick: Order

  15. Morris: Order (2013-SE-5403) | Department of Energy

    Energy Savers [EERE]

    Order (2013-SE-5403) Morris: Order (2013-SE-5403) July 21, 2015 DOE ordered Morris Products, Inc. to pay a $170,720 civil penalty after finding Morris had manufactured and distributed in commerce in the U.S. a large quantity of noncompliant metal halide lamp fixtures. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Morris. PDF icon Morris: Order (2013-SE-5403) More Documents & Publications Morris: Proposed Penalty (2013-SE-5403) Morris:

  16. Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Xufan; Lin, Ming-Wei; Lin, Junhao; Huang, Bing; Puretzky, Alexander A.; Ma, Cheng; Wang, Kai; Zhou, Wu; Pantelides, Sokrates T.; Chi, Miaofang; et al

    2016-04-01

    Two-dimensional (2D) heterostructures hold the promise for future atomically-thin electronics and optoelectronics due to their diverse functionalities. While heterostructures consisting of different transition metal dichacolgenide monolayers with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) or edge epitaxy, constructing heterostructures from monolayers of layered semiconductors with large lattice misfits still remains challenging. Here, we report the growth of monolayer GaSe/MoSe2 heterostructures with large lattice misfit by two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between themore » two layers, forming an incommensurate vdW heterostructure. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2 monolayer domains in lateral GaSe/MoSe2 heterostructures, GaSe monolayers are found to overgrow MoSe2 during CVD, forming a stripe of vertically stacked vdW heterostructure at the crystal interface. Such vertically-stacked vdW GaSe/MoSe2 heterostructures are shown to form p-n junctions with effective transport and separation of photo-generated charge carriers between layers, resulting in a gate-tunable photovoltaic response. In conclusion, these GaSe/MoSe2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.« less

  17. Spectral photoresponse of ZnSe/GaAs(001) heterostructures with CdSe ultra-thin quantum well insertions

    SciTech Connect (OSTI)

    Valverde-Chvez, D. A.; Sutara, F.; Hernndez-Caldern, I.

    2014-05-15

    We present a study of the spectral photoresponse (SPR) of ZnSe/GaAs(001) heterostructures for different ZnSe film thickness with and without CdSe ultra-thin quantum well (UTQW) insertions. We observe a significant increase of the SPR of heterostructures containing 3 monolayer thick CdSe UTQW insertions; these results encourage their use in photodetectors and solar cells.

  18. Twinning effect on photoluminescence spectra of ZnSe nanowires

    SciTech Connect (OSTI)

    Xu, Jing; Wang, Chunrui Wu, Binhe; Xu, Xiaofeng; Chen, Xiaoshuang; Oh, Hongseok; Baek, Hyeonjun; Yi, Gyu-Chul

    2014-11-07

    Bandgap engineering in a single material along the axial length of nanowires may be realized by arranging periodic twinning, whose twin plane is vertical to the axial length of nanowires. In this paper, we report the effect of twin on photoluminescence of ZnSe nanowires, which refers to the bandgap of it. The exciton-related emission peaks of transverse twinning ZnSe nanowires manifest a 10-meV-blue-shift in comparison with those of longitudinal twinning ZnSe nanowires. The blue-shift is attributed to quantum confinement effect, which is influenced severely by the proportion of wurtzite ZnSe layers in ZnSe nanowires.

  19. The half-life of {sup 131g,m}Te

    SciTech Connect (OSTI)

    Ruivo, J. C.; Zamboni, C. B.; Oliveira, J. R. B.; Heder Medina, Nilberto

    2013-05-06

    In this work, the half-lives of {sup 131m}Te and {sup 131g}Te were measured. Radioactive sources of {sup 131}Te were obtained using the {sup 130}Te(n,{gamma}){sup 131}Te nuclear reaction. These nuclear parameters have been determined with a better confidence and accuracy than previously available: 18.89 {+-} 0.11 min and 33.18 {+-} 0.13 h, respectively. These results are quite helpful for new calculations that attempt to describe the low-lying levels in {sup 131}I from the decay of {sup 131g,m}Te.

  20. Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy

    SciTech Connect (OSTI)

    DiNezza, Michael J.; Liu, Shi; Kirk, Alexander P.; Zhang, Yong-Hang; School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 ; Zhao, Xin-Hao; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287

    2013-11-04

    CdTe/MgCdTe double heterostructures (DHs) are grown on InSb substrates using molecular beam epitaxy and reveal strong photoluminescence with over double the intensity of a GaAs/AlGaAs DH with an identical layer structure design grown on GaAs. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a Shockley-Read-Hall recombination lifetime of 86 ns, which is more than one order of magnitude longer than that of typical polycrystalline CdTe films. These findings indicate that monocrystalline CdTe/MgCdTe DHs effectively reduce surface recombination, have limited nonradiative interface recombination, and are promising for solar cells that could reach power conversion efficiencies similar to that of GaAs.

  1. CuInSe/sub 2/-based photoelectrochemical cells: their use in characterization of thin CuInSe/sub 2/ films, and as photovoltaic cells per se

    SciTech Connect (OSTI)

    Cahen, D.; Chen, Y.W.; Ireland, P.J.; Noufi, R.; Turner, J.A.; Rincon, C.; Bachmann, K.J.

    1984-05-01

    Photoelectrochemistry has been employed to characterize the p-CuInSe/sub 2/ component of the CdS/CuInSe/sub 2/ on-metal and a nonaqueous electrolyte containing a redox couple not specifically adsorbed onto the semiconductor, we can test the films for photovoltaic activity and obtain effective electronic properties of them, before CdS deposition, in a nondestructive manner. Electrochemical decomposition of CuInSe/sub 2/ was investigated in acetonitrile solutions to determine the mechanism of decomposition (n and p) in the dark and under illumination. Electrochemical, solution chemical and surface analyses confirmed at the light-assisted decomposition of CuInSe/sub 2/ resulted in metal ions and elemental chalcogen. On the basis of the results from the electrochemical decomposition, and studies on the solid state chemistry of the (Cu/sub 2/Se)/sub x/(In/sub 2/Se/sub 3/)/sub 1-x/ system and surface analyses, the CuInSe/sub 2//polyiodide interface was stabilized and up to 11.7% conversion efficiencies were obtained.

  2. Thermoelectric transport of Se-rich Ag{sub 2}Se in normal phases and phase transitions

    SciTech Connect (OSTI)

    Mi, Wenlong; Lv, Yanhong; Qiu, Pengfei; Shi, Xun E-mail: cld@mail.sic.ac.cn; Chen, Lidong E-mail: cld@mail.sic.ac.cn; Zhang, Tiansong

    2014-03-31

    Small amount of Se atoms are used to tune the carrier concentrations (n{sub H}) and electrical transport in Ag{sub 2}Se. Significant enhancements in power factor and thermoelectric figure of merit (zT) are observed in the compositions of Ag{sub 2}Se{sub 1.06} and Ag{sub 2}Se{sub 1.08}. The excessive Se atoms do not change the intrinsically electron-conducting character in Ag{sub 2}Se. The detailed analysis reveals the experiment optimum carrier concentration in Ag{sub 2}Se is around 5??10{sup 18}?cm{sup ?3}. We also investigate the temperature of maximum zT and the thermoelectric transport during the first order phase transitions using the recently developed measurement system.

  3. Resonant Level Enhancement of the Thermoelectric Power of Bi2Te3...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Resonant Level Enhancement of the Thermoelectric Power of Bi2Te3 with Tin Resonant Level Enhancement of the Thermoelectric Power of Bi2Te3 with Tin Application to practical p-type...

  4. Energy Sources for Yotta-TeV Iceberg Showers (Conference) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    Energy Sources for Yotta-TeV Iceberg Showers Citation Details In-Document Search Title: Energy Sources for Yotta-TeV Iceberg Showers You are accessing a document from the ...

  5. ETA-HAC07 - Control of Measuring and Test Equipment (M&TE)

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Control of Measuring and Test Equipment (M&TE) Prepared by Electric Transportation ... The objective of this procedure is to assure that Measuring and Test Equipment (M&TE) used ...

  6. ETA-HIAC07 - Control of Measuring and Test Equipment (M&TE)

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Control of Measuring and Test Equipment (M&TE) Prepared by Electric Transportation ... The objective of this procedure is to assure that Measuring and Test Equipment (M&TE) used ...

  7. Probing TeV physics in the structure of the neutron (Technical...

    Office of Scientific and Technical Information (OSTI)

    Probing TeV physics in the structure of the neutron Citation Details In-Document Search Title: Probing TeV physics in the structure of the neutron You are accessing a document ...

  8. CdTe Thin Film Solar Cells and Modules Tutorial; NREL (National Renewable Energy Laboratory)

    SciTech Connect (OSTI)

    Albin, David S.

    2015-06-13

    This is a tutorial presented at the 42nd IEEE Photovoltaics Specialists Conference to cover the introduction, background, and updates on CdTe cell and module technology, including CdTe cell and module structure and fabrication.

  9. Probing TeV physics in the structure of the neutron (Technical...

    Office of Scientific and Technical Information (OSTI)

    Technical Report: Probing TeV physics in the structure of the neutron Citation Details In-Document Search Title: Probing TeV physics in the structure of the neutron Authors: Gupta, ...

  10. Pressure-induced Phase Transition in Thiol-capped CdTe Nanoparticles

    SciTech Connect (OSTI)

    Wu, F; Zaug, J; Young, C; Zhang, J Z

    2006-11-29

    Phase transitions for CdTe nanoparticles (NPs) under high pressure up to 37.0 GPa have been studied using fluorescence measurements. The phase transition from cinnarbar to rocksalt phase has been observed in CdTe NPs solution at 5.8 GPa, which is much higher than the phase transition pressure of bulk CdTe (3.8 GPa) and that of CdTe NPs in solid form (0.8 GPa). CdTe NPs solution therefore shows elevated phase transition pressure and enhanced stability against pressure compared with bulk CdTe and CdTe NPs in solid forms. The enhanced stability of CdTe NPs solution has been attributed to possible shape change in the phase transition and/or inhomogeneous strains in nanoparticle solutions.

  11. Glass formation and the third harmonic generation of Cu{sub 2}SeGeSe{sub 2}As{sub 2}Se{sub 3} glasses

    SciTech Connect (OSTI)

    Reshak, A. H.; Klymovych, O. S.; Zmiy, O. F.; Myronchuk, G. L.; Zamuruyeva, O. V.; Alahmed, Z. A.; Chysk, J.; Bila, Jiri; Kamarudin, H.

    2014-10-14

    We have performed the investigation of the nonlinear optical properties namely the third harmonic generation (THG) of the glass-formation region in the Cu{sub 2}SeGeSe{sub 2}As{sub 2}Se{sub 3} system. The samples were synthesized by direct single-temperature method from high-purity elementary substances. We have found that the value of disorder parameter ? depends on the composition of the glassy alloys. The measurements show that increasing the Cu{sub 2}Se concentration leads to increased slope of the absorption edge, which may be explained by the decrease of the height of random potential relief for the electrons in the tails of the state density which border the band edges. A very sharp increase in the THG at low temperature was observed. Significant enhancement in THG was obtained with decreasing the energy gap, which agreed well with the nonlinear optical susceptibilities obtained from other glasses.

  12. Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)

    SciTech Connect (OSTI)

    Gessert, T. A.

    2010-09-01

    Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

  13. Philips: Order (2014-SE-48006) | Department of Energy

    Energy Savers [EERE]

    Order (2014-SE-48006) Philips: Order (2014-SE-48006) April 14, 2015 DOE ordered Philips Lighting North America Corp. to pay a $75,000 civil penalty after finding Philips had manufactured and distributed in commerce in the U.S. at least 12,275 units of a variety of illuminated exit sign models. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Philips. PDF icon Philips: Order (2014-SE-48006) More Documents & Publications Philips: Proposed Penalty

  14. Everest Refrigeration: Order (2015-SE-42001) | Department of Energy

    Energy Savers [EERE]

    Order (2015-SE-42001) Everest Refrigeration: Order (2015-SE-42001) June 9, 2015 DOE ordered Bu Sung America Corporation (dba Everest Refrigeration) to pay a $12,080 civil penalty after finding Bu Sung had manufactured and distributed in commerce in the U.S. at least 64 units of noncompliant commercial refrigerator basic model ESGR3. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Bu Sung. PDF icon Everest Refrigeration: Order (2015-SE-42001) More

  15. U-105:Oracle Java SE Critical Patch Update Advisory

    Broader source: Energy.gov [DOE]

    Multiple vulnerabilities were reported in Oracle Java SE. A remote user can execute arbitrary code on the target system. A remote user can cause denial of service conditions.

  16. Research Forum Schedule-Research-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Forum Schedule PHaSE Research Fora and Talks This webpage is provided for legacy archive purposes only, as of 30 April 2015.

  17. SeQuential Biofuels LLC | Open Energy Information

    Open Energy Info (EERE)

    Biofuels LLC Jump to: navigation, search Name: SeQuential Biofuels LLC Place: Portland, Oregon Zip: 97231 Sector: Biofuels Product: A biofuels marketing and distribution company...

  18. SE Idaho Load Service Update - June 10, 2015

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SE-Idaho-Load-Service-Update---June-10,-2015 Sign In About | Careers | Contact | Investors | bpa.gov Search Doing Business Expand Doing Business Customer Involvement Expand...

  19. CdSe self-assembled quantum dots with ZnCdMgSe barriers emitting throughout the visible spectrum

    SciTech Connect (OSTI)

    Perez-Paz, M. Noemi; Zhou Xuecong; Munoz, Martin; Lu Hong; Sohel, Mohammad; Tamargo, Maria C.; Jean-Mary, Fleumingue; Akins, Daniel L.

    2004-12-27

    Self-assembled quantum dots of CdSe with ZnCdMgSe barriers have been grown by molecular beam epitaxy on InP substrates. The optical and microstructural properties were investigated using photoluminescence (PL) and atomic force microscopy (AFM) measurements. Control and reproducibility of the quantum dot (QD) size leading to light emission throughout the entire visible spectrum range has been obtained by varying the CdSe deposition time. Longer CdSe deposition times result in a redshift of the PL peaks as a consequence of an increase of QD size. AFM studies demonstrate the presence of QDs in uncapped structures. A comparison of this QD system with CdSe/ZnSe shows that not only the strain but also the chemical properties of the system play an important role in QD formation.

  20. TeVeS gets caught on caustics

    SciTech Connect (OSTI)

    Contaldi, Carlo R.; Wiseman, Toby; Withers, Benjamin

    2008-08-15

    TeVeS uses a dynamical vector field with timelike unit-norm constraint to specify a preferred local frame. When matter moves slowly in this frame--the so-called quasistatic regime--modified Newtonian dynamics results. Theories with such vectors (such as Einstein-Aether) are prone to the vector dynamics forming singularities that render their classical evolution problematic. Here, we analyze the dynamics of the vector in TeVeS in various situations. We begin by analytically showing that the vacuum solution of TeVeS forms caustic singularities under a large class of physically reasonably initial perturbations. This shows the classical evolution of TeVeS appears problematic in the absence of matter. We then consider matter by investigating black hole solutions. We find large classes of new black hole solutions with static geometries, where the curves generated by the vector field are attracted to the black hole and may form caustics. We go on to consider the full dynamics with matter by numerically simulating, assuming spherical symmetry, the gravitational collapse of a scalar, and the evolution of an initially nearly static boson star. We find that in both cases our initial data evolves so that the vector field develops caustic singularities on a time scale of order the gravitational in-fall time. Having shown singularity formation is generic with or without matter, Bekenstein's original formulation of TeVeS appears dynamically problematic. We argue that by modifying the vector field kinetic terms to the more general form used by Einstein-Aether, this problem may be avoided.

  1. Superconducting Bi2Te: Pressure-induced universality in the (Bi2)m(Bi2Te3)n series

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Stillwell, Ryan L.; Jeffries, Jason R.; Jenei, Zsolt; Weir, Samuel T.; Vohra, Yogesh K.

    2016-03-09

    Using high-pressure magnetotransport techniques we have discovered superconductivity in Bi2Te, a member of the infinitely adaptive (Bi2)m(Bi2Te3)n series, whose end members, Bi and Bi2Te3, can be tuned to display topological surface states or superconductivity. Bi2Te has a maximum Tc = 8.6 K at P = 14.5 GPa and goes through multiple high pressure phase transitions, ultimately collapsing into a bcc structure that suggests a universal behavior across the series. High-pressure magnetoresistance and Hall measurements suggest a semi-metal to metal transition near 5.4 GPa, which accompanies the hexagonal to intermediate phase transition seen via x-ray diffraction measurements. In addition, the linearitymore » of Hc2 (T) exceeds the Werthamer-Helfand-Hohenberg limit, even in the extreme spin-orbit scattering limit, yet is consistent with other strong spin-orbit materials. Furthermore, considering these results in combination with similar reports on strong spin-orbit scattering materials seen in the literature, we suggest the need for a new theory that can address the unconventional nature of their superconducting states.« less

  2. Surfactant-Free Synthesis of Bi?Te?-Te Micro-Nano Heterostructure with Enhanced Thermoelectric Figure of Merit

    SciTech Connect (OSTI)

    Zhang, Yichi; Wang, Heng; Kraemer, Stephan; Shi, Yifeng; Zhang, Fan; Snedaker, Matt; Ding, Kunlun; Moskovits, Martin; Snyder, G. Jeffrey; Stucky, Galen D.

    2011-01-01

    An ideal thermoelectric material would be a semiconductor with high electrical conductivity and relatively low thermal conductivity: an electron crystal, phonon glass. Introducing nanoscale heterostructures into the bulk TE matrix is one way of achieving this intuitively anomalous electron/phonon transport behavior. The heterostructured interfaces are expected to play a significant role in phonon scattering to reduce thermal conductivity and in the energy-dependent scattering of electrical carriers to improve the Seebeck coefficient. A nanoparticle building block assembly approach is plausible to fabricate three-dimensional heterostructured materials on a bulk commercial scale. However, a key problem in applying this strategy is the possible negative impact on TE performance of organic residue from the nanoparticle capping ligands. Herein, we report a wet chemical, surfactant-free, low-temperature, and easily up-scalable strategy for the synthesis of nanoscale heterophase Bi?Te?-Te via a galvanic replacement reaction. The micro-nano heterostructured material is fabricated bottom-up, by mixing the heterophase with commercial Bi?Te?. This unique structure shows an enhanced zT value of ~0.4 at room temperature. This heterostructure has one of the highest figures of merit among bismuth telluride systems yet achieved by a wet chemical bottom-up assembly. In addition, it shows a 40% enhancement of the figure of merit over our lab-made material without nanoscale heterostructures. This enhancement is mainly due to the decrease in the thermal conductivity while maintaining the power factor. Overall, this cost-efficient and room-temperature synthesis methodology provides the potential for further improvement and large-scale thermoelectric applications.

  3. High-Efficiency CdTe and CIGS Thin-Film Solar Cells: Highlights and Challenges; Preprint

    SciTech Connect (OSTI)

    Noufi, R.; Zweibel, K.

    2006-05-01

    Thin-film photovoltaic (PV) modules of CdTe and Cu(In,Ga)Se2 (CIGS) have the potential to reach cost-effective PV-generated electricity. These technologies have transitioned from the laboratory to the market place. Pilot production and first-time manufacturing are ramping up to higher capacity and enjoying a flood of venture-capital funding. CIGS solar cells and modules have achieved 19.5% and 13% efficiencies, respectively. Likewise, CdTe cells and modules have reached 16.5% and 10.2% efficiencies, respectively. Even higher efficiencies from the laboratory and from the manufacturing line are only a matter of time. Manufacturing-line yield continues to improve and is surpassing 85%. Long-term stability has been demonstrated for both technologies; however, some failures in the field have also been observed, emphasizing the critical need for understanding degradation mechanisms and packaging options. The long-term potential of the two technologies require R&D emphasis on science and engineering-based challenges to find solutions to achieve targeted cost-effective module performance, and in-field durability. Some of the challenges are common to both, e.g., in-situ process control and diagnostics, thinner absorber, understanding degradation mechanisms, protection from water vapor, and innovation in high-speed processing and module design. Other topics are specific to the technology, such as lower-cost and fast-deposition processes for CIGS, and improved back contact and voltage for CdTe devices.

  4. Traulsen: Order (2015-SE-42002) | Department of Energy

    Energy Savers [EERE]

    Order (2015-SE-42002) Traulsen: Order (2015-SE-42002) August 31, 2015 DOE ordered Traulsen - ITW Food Group LLC to pay a $52,600 civil penalty after finding Traulsen had manufactured and distributed in commerce in the U.S. at least 284 units of commercial refrigerator-freezer basic model RDT132DUT-HHS, a noncompliant product. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Traulsen. PDF icon Traulsen: Order (2015-SE-42002) More Documents &

  5. Victory: Order (2015-SE-42033) | Department of Energy

    Energy Savers [EERE]

    Order (2015-SE-42033) Victory: Order (2015-SE-42033) October 27, 2015 DOE ordered Victory Refrigeration to pay a $1,600 civil penalty after finding Victory had manufactured and distributed in commerce in the U.S. at least 8 units of commercial refrigerator-freezer basic model RFS-1D-S1-EW-PT-HD, a noncompliant product. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Victory. PDF icon Victory: Order (2015-SE-42033) More Documents & Publications

  6. Optical Probing of metamagnetic phases in epitaxial EuSe

    SciTech Connect (OSTI)

    Galgano, G. D.; Henriques, A. B.; Bauer, G.; Springholz, G.

    2011-12-23

    EuSe is a wide gap magnetic semiconductors with a potential for applications in proof-of-concept spintronic devices. When the temperature is lowered, EuSe goes through sharp transitions between a variety of magnetic phases and is thus described as metamagnetic. The purpose of the present investigation is to correlate the magnetic order to the sharp dichroic doublet, discovered recently in high quality thin epitaxial layers of EuSe, grown by molecular beam epitaxy. We report detailed measurements of the doublet positions and intensities as a function of magnetic field in low temperatures, covering several magnetic phases.

  7. Diameter dependent thermoelectric properties of individual SnTe nanowires

    SciTech Connect (OSTI)

    Xu, E. Z.; Li, Z.; Martinez, J. A.; Sinitsyn, N.; Htoon, H.; Li, Nan; Swartzentruber, B.; Hollingsworth, J. A.; Wang, Jian; Zhang, S. X.

    2015-01-15

    The lead-free compound tin telluride (SnTe) has recently been suggested to be a potentially promising thermoelectric material because of its similar electronic band structure as the well-known lead telluride. Here we report on the first thermoelectric study of individual single crystalline SnTe nanowires (NWs) with different diameters ranging from ~200 to ~1000 nm. Measurements of thermopower S, electrical conductivity σ, and thermal conductivity κ were carried out on the same nanowires over a temperature range of 25 - 300 K. While σ does not show a strong diameter dependence, the thermopower increases by a factor of 2 when the nanowire diameter is decreased from 1000 nm to 200 nm. The thermal conductivities of the measured NWs are only about half of that of the bulk SnTe, which may arise from the enhanced phonon-grain boundary and phonon-defect scatterings. Temperature dependent figure-of-merit ZT was determined and the maximum value at room temperature is ~3 times higher than what was obtained in bulk samples of comparable carrier density.

  8. Diameter dependent thermoelectric properties of individual SnTe nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xu, E. Z.; Li, Z.; Martinez, J. A.; Sinitsyn, N.; Htoon, H.; Li, Nan; Swartzentruber, B.; Hollingsworth, J. A.; Wang, Jian; Zhang, S. X.

    2015-01-15

    The lead-free compound tin telluride (SnTe) has recently been suggested to be a potentially promising thermoelectric material because of its similar electronic band structure as the well-known lead telluride. Here we report on the first thermoelectric study of individual single crystalline SnTe nanowires (NWs) with different diameters ranging from ~200 to ~1000 nm. Measurements of thermopower S, electrical conductivity σ, and thermal conductivity κ were carried out on the same nanowires over a temperature range of 25 - 300 K. While σ does not show a strong diameter dependence, the thermopower increases by a factor of 2 when the nanowiremore » diameter is decreased from 1000 nm to 200 nm. The thermal conductivities of the measured NWs are only about half of that of the bulk SnTe, which may arise from the enhanced phonon-grain boundary and phonon-defect scatterings. Temperature dependent figure-of-merit ZT was determined and the maximum value at room temperature is ~3 times higher than what was obtained in bulk samples of comparable carrier density.« less

  9. Optical Properties of CdSe Nanoparticle Assemblies

    SciTech Connect (OSTI)

    Huser, T; Gerion, D; Zaitseva, N; Krol, D M; Leon, F R

    2003-11-24

    We report on three-dimensional fluorescence imaging of micron-size faceted crystals precipitated from solutions of CdSe nanocrystals. Such crystals have previously been suggested to be superlattices of CdSe quantum dots [1,2]. Possible applications for these materials include their use in optical and optoelectronic devices. The micron-size crystals were grown by slow evaporation from toluene solutions of CdSe nanocrystals in the range of 3-6 nm, produced by traditional wet-chemistry techniques. By using a confocal microscope with laser illumination, three-dimensional raster-scanning and synchronized hyper-spectral detection, we have generated spatial profiles of the fluorescence emission intensity and spectrum. The fluorescence data of the micro-crystals were compared with spectra of individual nanocrystals obtained from the same solution. The results do not support the assertion that these microcrystals consist of CdSe superlattices.

  10. Enhanced thermoelectric power and electronic correlations in RuSe?

    SciTech Connect (OSTI)

    Wang, Kefeng; Wang, Aifeng; Tomic, A.; Wang, Limin; Abeykoon, A. M. Milinda; Dooryhee, E.; Billinge, S. J.L.; Petrovic, C.

    2015-03-03

    We report the electronic structure, electric and thermal transport properties of Ru??xIrxSe? (x ? 0.2). RuSe? is a semiconductor that crystallizes in a cubic pyrite unit cell. The Seebeck coefficient of RuSe? exceeds -200 V/K around 730 K. Ir substitution results in the suppression of the resistivity and the Seebeck coefficient, suggesting the removal of the peaks in density of states near the Fermi level. Ru?.?Ir?.?Se? shows a semiconductor-metal crossover at about 30 K. The magnetic field restores the semiconducting behavior. Our results indicate the importance of the electronic correlations in enhanced thermoelectricity of RuSb?.

  11. Synthesis and properties of new CdSe-AgI-As{sub 2}Se{sub 3} chalcogenide glasses

    SciTech Connect (OSTI)

    Kassem, M.; ULCO, LPCA, EAC CNRS 4493 F-59140 Dunkerque ; Le Coq, D.; Fourmentin, M.; Hindle, F.; Bokova, M.; Cuisset, A.; Masselin, P.; Bychkov, E.; ULCO, LPCA, EAC CNRS 4493 F-59140 Dunkerque

    2011-02-15

    Research highlights: {yields} Determination of the glass-forming region in the pseudo-ternary CdSe-AgI-As{sub 2}Se{sub 3} system. {yields} Characterization of macroscopic properties of the new CdSe-AgI-As{sub 2}Se{sub 3} glasses. {yields} Far infrared transmission of chalcogenide glasses. {yields} Characterization of the total conductivity of CdSe-AgI-As{sub 2}Se{sub 3} glasses. -- Abstract: The glass-forming region in the pseudo-ternary CdSe-AgI-As{sub 2}Se{sub 3} system was determined. Measurements including differential scanning calorimetry (DSC), density, and X-ray diffraction were performed. The effect resulting from the addition of CdSe or AgI has been highlighted by examining three series of different base glasses. The characteristic temperatures of the glass samples, including glass transition (T{sub g}), crystallisation (T{sub x}), and melting (T{sub m}) temperatures are reported and used to calculate their {Delta}T = T{sub x} - T{sub g} and their Hruby, H{sub r} = (T{sub x} - T{sub g})/(T{sub m} - T{sub x}), criteria. Evolution of the total electrical conductivity {sigma} and the room temperature conductivity {sigma}{sub 298} was also studied. The terahertz transparency domain in the 50-600 cm{sup -1} region was pointed for different chalcogenide glasses (ChGs) and the potential of the THz spectroscopy was suggested to obtain structural information on ChGs.

  12. Seaga: Noncompliance Determination (2015-SE-52001) | Department of Energy

    Energy Savers [EERE]

    Seaga: Noncompliance Determination (2015-SE-52001) Seaga: Noncompliance Determination (2015-SE-52001) June 19, 2015 DOE issued a Notice of Noncompliance Determination to Seaga Manufacturing, Inc. finding that the refrigerated bottle and canned beverage vending machine (BVM) basic model with name plate model SP536R does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Seaga must immediately notify each person (or company) to

  13. Philips: Noncompliance Determination (2014-SE-48006) | Department of Energy

    Energy Savers [EERE]

    Noncompliance Determination (2014-SE-48006) Philips: Noncompliance Determination (2014-SE-48006) March 26, 2015 DOE issued a Notice of Noncompliance Determination to Philips Lighting North America Corp. finding that a variety of illuminated exit sign models do not comport with the energy conservation standards, based on information provided to DOE by Philips. DOE determined the products were noncompliant based on testing information provided by the company. Philips must immediately notify each

  14. Quantum oscillations in a two-dimensional electron gas at the rocksalt/zincblende interface of PbTe/CdTe (111) heterostructures.

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhang, Bingpo; Lu, Ping; Liu, Henan; Jiao, Lin; Ye, Zhenyu; Jaime, M.; Balakirev, F. F.; Yuan, Huiqiu; Wu, Huizhen; Pan, Wei; et al

    2015-06-05

    Quantum oscillations are observed in the 2DEG system at the interface of novel heterostructures, PbTe/CdTe (111), with nearly identical lattice parameters (aPbTe = 0.6462 nm, aCdTe = 0.648 nm) but very different lattice structures (PbTe: rock salt, CdTe: zinc blende). The 2DEG formation mechanism, a mismatch in the bonding configurations of the valence electrons at the interface, is uniquely different from the other known 2DEG systems. The aberration-corrected scanning transmission electron microscope (AC-STEM) characterization indicates an abrupt interface without cation interdiffusion due to a large miscibility gap between the two constituent materials. As a result, electronic transport measurements under magneticmore » field up to 60 T, with the observation of Landau level filling factor ν = 1, unambiguously reveal a π Berry phase, suggesting the Dirac Fermion nature of the 2DEG at the heterostructure interface, and the PbTe/CdTe heterostructure being a new candidate for 2D topological crystalline insulators.« less

  15. Quantum oscillations in a two-dimensional electron gas at the rocksalt/zincblende interface of PbTe/CdTe (111) heterostructures.

    SciTech Connect (OSTI)

    Zhang, Bingpo; Lu, Ping; Liu, Henan; Jiao, Lin; Ye, Zhenyu; Jaime, M.; Balakirev, F. F.; Yuan, Huiqiu; Wu, Huizhen; Pan, Wei; Zhang, Yong

    2015-06-05

    Quantum oscillations are observed in the 2DEG system at the interface of novel heterostructures, PbTe/CdTe (111), with nearly identical lattice parameters (aPbTe = 0.6462 nm, aCdTe = 0.648 nm) but very different lattice structures (PbTe: rock salt, CdTe: zinc blende). The 2DEG formation mechanism, a mismatch in the bonding configurations of the valence electrons at the interface, is uniquely different from the other known 2DEG systems. The aberration-corrected scanning transmission electron microscope (AC-STEM) characterization indicates an abrupt interface without cation interdiffusion due to a large miscibility gap between the two constituent materials. As a result, electronic transport measurements under magnetic field up to 60 T, with the observation of Landau level filling factor ν = 1, unambiguously reveal a π Berry phase, suggesting the Dirac Fermion nature of the 2DEG at the heterostructure interface, and the PbTe/CdTe heterostructure being a new candidate for 2D topological crystalline insulators.

  16. Dynamic conductivity of the bulk states of n-type HgTe/CdTe quantum well topological insulator

    SciTech Connect (OSTI)

    Chen, Qinjun; Sanderson, Matthew; Cao, J. C.; Zhang, Chao

    2014-11-17

    We theoretically studied the frequency-dependent current response of the bulk state of topological insulator HgTe/CdTe quantum well. The optical conductivity is mainly due to the inter-band process at high frequencies. At low frequencies, intra-band process dominates with a dramatic drop to near zero before the inter-band contribution takes over. The conductivity decreases with temperature at low temperature and increases with temperature at high temperature. The transport scattering rate has an opposite frequency dependence in the low and high temperature regime. The different frequency dependence is due to the interplay of the carrier-impurity scattering and carrier population near the Fermi surface.

  17. Grain boundary junctions of FeSe0.5Te0.5 thin films on SrTiO3...

    Office of Scientific and Technical Information (OSTI)

    Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA National High Magnetic Field Laboratory, Florida State University,...

  18. Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Guiseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

    2015-02-11

    Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an ordermore » of 102. During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10-5 mbar, we observed the diffusion of Te from the sample, causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10-5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on certain conditions.« less

  19. The influence of interfaces on properties of thin-film inorganic structural isomers containing SnSeNbSe? Subunits

    SciTech Connect (OSTI)

    Alemayehu, Matti B.; Falmbigl, Matthias; Ta, Kim; Johnson, David C.

    2015-08-28

    Inorganic isomers ([SnSe]1+?)m(NbSe?)n([SnSe]1+?)p(NbSe?)q([SnSe]1+?)r(NbSe?)s where m, n, p, q, r, and s are integers and m + p + r = n + q + s = 4 were prepared using the modulated elemental reactant technique. This series of all six possible isomers provides an opportunity to study the influence of interface density on properties while maintaining the same unit cell size and composition. As expected, all six compounds were observed to have the same atomic compositions and an almost c-axis lattice parameter of ?4.90 (5) nm, with a slight trend in the c-axis lattice parameter correlated with the different number of interfaces in the isomers: two, four and six. The structures of the constituents in the ab-plane were independent of one another, confirming the nonepitaxial relationship between them. The temperature dependent electrical resistivities revealed metallic behavior for all the six compounds. Surprisingly, the electrical resistivity at room temperature decreases with increasing number of interfaces. Hall measurements suggest this results from changes in carrier concentration, which increases with increasing thickness of the thickest SnSe block in the isomer. Carrier mobility scales with the thickness of the thickest NbSe? block due to increased interfacial scattering as the NbSe? blocks become thinner. The observed behavior suggests that the two constituents serve different purposes with respect to electrical transport. SnSe acts as a charge donor and NbSe? acts as the charge transport layer. This separation of function suggests that such heterostructures can be designed to optimize performance through choice of constituent, layer thickness, and layer sequence. A simplistic model, which predicts the properties of the complex isomers from a weighted sum of the properties of building blocks, was developed. A theoretical model is needed to predict the optimal compound for specific properties among the many potential compounds that can be prepared.

  20. Empirical correlations between the arrhenius' parameters of impurities' diffusion coefficients in CdTe crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shcherbak, L.; Kopach, O.; Fochuk, P.; James, R. B.; Bolotnikov, A. E.

    2015-01-21

    Understanding of self- and dopant-diffusion in semiconductor devices is essential to our being able to assure the formation of well-defined doped regions. In this paper, we compare obtained in the literature up to date the Arrhenius’ parameters (D=D0exp(–ΔEa/kT)) of point-defect diffusion coefficients and the I-VII groups impurities in CdTe crystals and films. We found that in the diffusion process there was a linear dependence between the pre-exponential factor, D0, and the activation energy, ΔEa, of different species: This was evident in the self-diffusivity and isovalent impurity Hg diffusivity as well as for the dominant IIIA and IVA groups impurities andmore » Chlorine, except for the fast diffusing elements (e.g., Cu and Ag), chalcogens O, S, and Se, halogens I and Br as well as the transit impurities Mn, Co, Fe. As a result, reasons of the lack of correspondence of the data to compensative dependence are discussed.« less

  1. A W' boson near 2 TeV: Predictions for run 2 of the LHC

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dobrescu, Bogdan A.; Liu, Zhen

    2015-11-20

    We present a renormalizable theory that includes a W' boson of mass in the 1.8–2 TeV range, which may explain the excess events reported by the ATLAS Collaboration in a WZ final state, and by the CMS Collaboration in e+e– jj, Wh0, and jj final states. The W' boson couples to right-handed quarks and leptons, including Dirac neutrinos with TeV-scale masses. This theory predicts a Z' boson of mass in the 3.4–4.5 TeV range. The cross section times branching fractions for the narrow Z' dijet and dilepton peaks at the 13 TeV LHC are 10 and 0.6 fb, respectively, formore » MZ'=3.4 TeV, and an order of magnitude smaller for MZ'=4.5 TeV.« less

  2. Charge transfer and mobility enhancement at CdO/SnTe heterointerfaces

    SciTech Connect (OSTI)

    Nishitani, Junichi; Yu, Kin Man; Walukiewicz, Wladek

    2014-09-29

    We report a study of the effects of charge transfer on electrical properties of CdO/SnTe heterostructures. A series of structures with variable SnTe thicknesses were deposited by RF magnetron sputtering. Because of an extreme type III band offset with the valence band edge of SnTe located at 1.5?eV above the conduction band edge of CdO, a large charge transfer is expected at the interface of the CdO/SnTe heterostructure. The electrical properties of the heterostructures are analyzed using a multilayer charge transport model. The analysis indicates a large 4-fold enhancement of the CdO electron mobility at the interface with SnTe. The mobility enhancement is attributed to reduction of the charge center scattering through neutralization of the donor-like defects responsible for the Fermi level pinning at the CdO/SnTe interface.

  3. The Effect of Structural Vacancies on the Thermoelectric Properties of (Cu2Te)1-x(Ga2Te3)x

    SciTech Connect (OSTI)

    Ye, Zuxin; Cho, Jung Y; Tessema, Misle; Salvador, James R.; Waldo, Richard; Wang, Hsin; Cai, Wei

    2013-01-01

    We have studied the effects of structural vacancies on the thermoelectric properties of the ternary compounds (Cu2Te)1-x(Ga2Te3)x (x = 0.5, 0.55, 0.571, 0.6, 0.625, 0.667 and 0.75), which are solid solutions found in the pseudo-binary phase diagram for Cu2Te and Ga2Te3. This system possesses tunable structural vacancy concentrations. The x= 0.5 phase, CuGaTe2, is nominally devoid of structural vacancies, while the rest of the compounds contain varying amounts of these features, and the volume density of vacancies increases with Ga2Te3 content. The sample with x = 0.5, 0.55, 0.571, 0.6, 0.625 crystallize in the chalcopyrite structure while the x = 0.667 and 0.75 adopt the Ga2Te3 defect zinc blende structure. Strong scattering of heat carrying phonons by structural defects, leads to the reduction of thermal conductivity, which is beneficial to the thermoelectric performance of materials. On the other hand, these defects also scatter charge carriers and reduce the electrical conductivity. All the samples investigated are p-type semiconductors as inferred by the signs of their respective Hall (RH) and Seebeck (S) coefficients. The structural vacancies were found to scatter phonons strongly, while a combination of increased carrier concentration, and vacancies decreases the Hall mobility ( H), degrading the overall thermoelectric performance. The room temperature H drops from 90 cm2/V s for CuGaTe2 to 13 cm2/V s in Cu9Ga11Te21 and 4.6 cm2/V s in CuGa3Te5. The low temperature thermal conductivity decreases significantly with higher Ga2Te3 concentrations (higher vacancy concentration) due to increased point defect scattering which dominate thermal resistance terms. At high temperatures, the dependence of thermal conductivity on the Ga2Te3 content is less significant. The presence of strong Umklapp scattering leads to low thermal conductivity at high temperatures for all samples investigated. The highest ZT among the samples in this study was found for the defect-free CuGaTe2 with ZT ~ 1.0 at 840K.

  4. EMPaSE: an Extensible Multi-Paradigm Simulation Environment

    Energy Science and Technology Software Center (OSTI)

    2010-08-05

    EMPaSE is a hierarchical, extensible, modular modeling environment for developing and running hybrid simulations of sequential-modular, systems dynamics, discrete-event, and agent-based paradigms. It contains two principle components: a multi-paradigm simulation engine and a graphical user interface. EMPaSE models are defined through a hierarchically-defined set of computational modules that define the simulation logic. Inter-module communication occurs through two complimentary systems: pull-based "ports" for general computation patterns and push-based "plugs" for event processing. Entities (i.e. agents) withinmore » the simulation operate within an abstract multi-network environment. The EMPaSE simulation engine is designed around a flexible plug-in architecture, allowing simulations to import computational modules, engine customizations, and interfaces to external applications from independent plug-in libraries. The EMPaSE GUI environment provides an environment for graphically constructing, executing, and debugging EMPaSE models. As with the simulation engine, the GUI is constructed on top of an extensible architecture that supports rapid customization of the user experience through external plug-in libraries.« less

  5. Photoluminescence Imaging of Large-Grain CdTe for Grain Boundary

    Office of Scientific and Technical Information (OSTI)

    Characterization (Conference) | SciTech Connect Photoluminescence Imaging of Large-Grain CdTe for Grain Boundary Characterization Citation Details In-Document Search Title: Photoluminescence Imaging of Large-Grain CdTe for Grain Boundary Characterization In this work, we use photoluminescence (PL) imaging to characterize CdTe grain boundary recombination. We use a silicon megapixel camera and green (532 nm) laser diodes for excitation. A microscope objective lens system is used for high

  6. Component Overpressure Growth and Characterization of High Resistivity CdTe

    Office of Scientific and Technical Information (OSTI)

    Crystals for Radiation Detectors (Journal Article) | SciTech Connect Component Overpressure Growth and Characterization of High Resistivity CdTe Crystals for Radiation Detectors Citation Details In-Document Search Title: Component Overpressure Growth and Characterization of High Resistivity CdTe Crystals for Radiation Detectors Spectrometer-grade CdTe single crystals with resistivities higher than 10{sup 9} {Omega} cm have been grown by the modified Bridgman method using zone-refined

  7. High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011

    SciTech Connect (OSTI)

    Carmody, M.; Gilmore, A.

    2011-05-01

    The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently showed state-of-the-art electron mobilities and good hole mobilities; bulk minority carrier recombination lifetimes of unintentionally p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be consistently of order 100 ns or longer; desired n- and p-doping levels were achieved; solar cell series specific resistances <10 ?-cm2 were achieved; A single-junction solar cell having a state-of-the-art value of Voc and a unverified 16.4% efficiency was fabricated from CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a tandem cell with a Si bottom junction.

  8. Microstructure and Thermoelectric Properties of Mechanically Robust PbTe-Si

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Eutectic Composites | Energy Frontier Research Centers Microstructure and Thermoelectric Properties of Mechanically Robust PbTe-Si Eutectic Composites Home Author: J. R. Sootsman, J. He, V. P. Dravid, S. Ballikaya, D. Vermeulen, C. Uher, M. G. Kanatzidis Year: 2010 Abstract: The microstructure and thermoelectric properties of the PbTe-Si eutectic system are presented in detail. When rapidly quenched from the melt this system yields materials with thermoelectric properties similar to PbTe

  9. High Efficiency CdTe and CIGS Thin Film Solar Cells: Highlights...

    Office of Scientific and Technical Information (OSTI)

    High Efficiency CdTe and CIGS Thin Film Solar Cells: Highlights of the Technologies Challenges Acknowledgement: Work performed at NREL for US DOE under contract No....

  10. Analysis of Surface Chemistry and Detector Performance of Chemically Process CdZnTe crystals

    SciTech Connect (OSTI)

    HOSSAIN A.; Yang, G.; Sutton, J.; Zergaw, T.; Babalola, O. S.; Bolotnikov, A. E.; Camarda. ZG. S.; Gul, R.; Roy, U. N., and James, R. B.

    2015-10-05

    The goal is to produce non-conductive smooth surfaces for fabricating low-noise and high-efficiency CdZnTe devices.

  11. Nanoscale imaging of photocurrent and efficiency in CdTe solar...

    Office of Scientific and Technical Information (OSTI)

    cells The local collection characteristics of grain interiors and grain boundaries in thin film CdTe polycrystalline solar cells are investigated using scanning photocurrent...

  12. Characterization and Analysis of CIGS and CdTE Solar Cells: December 2004 - July 2008

    SciTech Connect (OSTI)

    Sites, J. R.

    2009-01-01

    The work reported here embodies a device-physics approach based on careful measurement and interpretation of data from CIGS and CdTe solar cells.

  13. GE Appliances: Order (2012-SE-1403) | Department of Energy

    Energy Savers [EERE]

    Appliances: Order (2012-SE-1403) GE Appliances: Order (2012-SE-1403) October 3, 2012 DOE ordered GE Appliances, a Division of General Electric Company to pay a $63,000 civil penalty after finding GE had privately labeled and distributed in commerce in the U.S. the 4-cubic-foot capacity refrigerator basic model SMR04GAZCS, which includes models SMR04GAZACS and SMR04GAZBCS. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and GE. PDF icon GE Appliances: Order

  14. Utility: Order (2016-SE-42003) | Department of Energy

    Energy Savers [EERE]

    SE-42003) Utility: Order (2016-SE-42003) March 1, 2016 DOE ordered Utility Refrigerator to pay a $200 civil penalty after finding Utility manufactured and distributed in commerce in the U.S. 1 unit of a Utility brand commercial refrigerator, model PT-R-75-SS-3S-3S-N. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Utility. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do

  15. Sunshine Lighting: Order (2014-SE-54008) | Department of Energy

    Energy Savers [EERE]

    Sunshine Lighting: Order (2014-SE-54008) Sunshine Lighting: Order (2014-SE-54008) July 7, 2015 DOE ordered Lighting & Supplies, Inc. d/b/a Sunshine Lighting Company ("Sunshine") to pay a $150,000 civil penalty after finding Sunshine had manufactured and distributed in commerce in the U.S. 1780 units of Sunlite brand basic model 04937-SU and 1134 units of basic model 04952-SU, noncompliant metal halide lamp fixtures. The Order adopted a Compromise Agreement, which reflected

  16. Excited-State Relaxation in PbSe Quantum Dots

    SciTech Connect (OSTI)

    An, J. M.; Califano, M.; Franceschetti, A.; Zunger, A.

    2008-01-01

    In solids the phonon-assisted, nonradiative decay from high-energy electronic excited states to low-energy electronic excited states is picosecond fast. It was hoped that electron and hole relaxation could be slowed down in quantum dots, due to the unavailability of phonons energy matched to the large energy-level spacings ('phonon-bottleneck'). However, excited-state relaxation was observed to be rather fast ({le}1 ps) in InP, CdSe, and ZnO dots, and explained by an efficient Auger mechanism, whereby the excess energy of electrons is nonradiatively transferred to holes, which can then rapidly decay by phonon emission, by virtue of the densely spaced valence-band levels. The recent emergence of PbSe as a novel quantum-dot material has rekindled the hope for a slow down of excited-state relaxation because hole relaxation was deemed to be ineffective on account of the widely spaced hole levels. The assumption of sparse hole energy levels in PbSe was based on an effective-mass argument based on the light effective mass of the hole. Surprisingly, fast intraband relaxation times of 1-7 ps were observed in PbSe quantum dots and have been considered contradictory with the Auger cooling mechanism because of the assumed sparsity of the hole energy levels. Our pseudopotential calculations, however, do not support the scenario of sparse hole levels in PbSe: Because of the existence of three valence-band maxima in the bulk PbSe band structure, hole energy levels are densely spaced, in contradiction with simple effective-mass models. The remaining question is whether the Auger decay channel is sufficiently fast to account for the fast intraband relaxation. Using the atomistic pseudopotential wave functions of Pb{sub 2046}Se{sub 2117} and Pb{sub 260}Se{sub 249} quantum dots, we explicitly calculated the electron-hole Coulomb integrals and the P {yields} S electron Auger relaxation rate. We find that the Auger mechanism can explain the experimentally observed P {yields} S intraband decay time scale without the need to invoke any exotic relaxation mechanisms.

  17. Scandium resonant impurity level in PbTe

    SciTech Connect (OSTI)

    Skipetrov, E. P. Skipetrova, L. A.; Knotko, A. V.; Slynko, E. I.; Slynko, V. E.

    2014-04-07

    We synthesize a scandium-doped PbTe single-crystal ingot and investigate the phase and the elemental composition as well as galvanomagnetic properties of Pb{sub 1-y}Sc{sub y}Te alloys in weak magnetic fields (4.2?K???T???300?K, B???0.07?T) upon varying the scandium content (y???0.02). We find that all investigated samples are single-phase and n-type. The distribution of scandium impurities along the axis of the ingot is estimated to be exponential. An increase of scandium impurity content leads to a monotonous growth of the free electron concentration by four orders of magnitude (approximately from 10{sup 16}?cm{sup ?3} to 10{sup 20}?cm{sup ?3}). In heavily doped alloys (y?>?0.01), the free electron concentration at the liquid-helium temperature tends to saturation, indicating the pinning of the Fermi energy by the scandium resonant impurity level located on the background of the conduction band. Using the two-band Kane and six-band Dimmock dispersion relations for IV-VI semiconductors, dependences of the Fermi energy measured from the bottom of the conduction band E{sub c} on the scandium impurity content are calculated and the energy of the resonant scandium level is estimated to be E{sub Sc}???E{sub c}?+?280?meV. Diagrams of electronic structure rearrangement of Pb{sub 1-y}Sc{sub y}Te alloys upon doping are proposed.

  18. High-Efficiency, Commercial Ready CdTe Solar Cells

    SciTech Connect (OSTI)

    Sites, James R.

    2015-11-19

    Colorado State’s F-PACE project explored several ways to increase the efficiency of CdTe solar cells and to better understand the device physics of those cells under study. Increases in voltage, current, and fill factor resulted in efficiencies above 17%. The three project tasks and additional studies are described in detail in the final report. Most cells studied were fabricated at Colorado State using an industry-compatible single-vacuum closed-space-sublimation (CSS) chamber for deposition of the key semiconductor layers. Additionally, some cells were supplied by First Solar for comparison purposes, and a small number of modules were supplied by Abound Solar.

  19. Mr. John E. Kieling, Chief Hazardous Was te Bureau

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    John E. Kieling, Chief Hazardous Was te Bureau Depa rtment of Energy Carlsbad Field Office P. O. Box 3090 Carlsbad , New Mexico 88221 NOV 0 5 2013 New Mexico Environment Department 2905 Rodeo Park Drive East. Building 1 Santa Fe, New Mexico 87505-6303 Subject: Panel 6 Closure and Final Waste Emplacement Notifications Dear Mr. Kieling : The purpose of this leiter is 1 0 notify th e New Mexico Environment Department (NMEO) that the Permittees intend to commence closure of Hazardous Waste Disposa

  20. Orbitally-driven giant phonon anharmonicity in SnSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Chen W.; Hong, Jiawang; May, Andrew F.; Bansal, Dipanshu; Chi, Songxue; Hong, Tao; Ehlers, Georg; Delaire, Olivier A.

    2015-10-19

    We understand that elementary excitations and their couplings in condensed matter systems is critical to develop better energy-conversion devices. In thermoelectric materials, the heat-to-electricity conversion efficiency is directly improved by suppressing the propagation of phonon quasiparticles responsible for macroscopic thermal transport. The material with the current record for thermoelectric conversion efficiency, SnSe, achieves an ultra-low thermal conductivity, but the mechanism enabling this strong phonon scattering remains largely unknown. Using inelastic neutron scattering measurements and first-principles simulations, we mapped the four-dimensional phonon dispersion surfaces of SnSe, and revealed the origin of ionic-potential anharmonicity responsible for the unique properties of SnSe. Wemore » show that the giant phonon scattering arises from an unstable electronic structure, with orbital interactions leading to a ferroelectric-like lattice instability. Our results provide a microscopic picture connecting electronic structure and phonon anharmonicity in SnSe, and offers precious insights on how electron-phonon and phononphonon interactions may lead to the realization of ultra-low thermal conductivity.« less

  1. Orbitally-driven giant phonon anharmonicity in SnSe

    SciTech Connect (OSTI)

    Li, Chen W.; Hong, Jiawang; May, Andrew F.; Bansal, Dipanshu; Chi, Songxue; Hong, Tao; Ehlers, Georg; Delaire, Olivier A.

    2015-10-19

    We understand that elementary excitations and their couplings in condensed matter systems is critical to develop better energy-conversion devices. In thermoelectric materials, the heat-to-electricity conversion efficiency is directly improved by suppressing the propagation of phonon quasiparticles responsible for macroscopic thermal transport. The material with the current record for thermoelectric conversion efficiency, SnSe, achieves an ultra-low thermal conductivity, but the mechanism enabling this strong phonon scattering remains largely unknown. Using inelastic neutron scattering measurements and first-principles simulations, we mapped the four-dimensional phonon dispersion surfaces of SnSe, and revealed the origin of ionic-potential anharmonicity responsible for the unique properties of SnSe. We show that the giant phonon scattering arises from an unstable electronic structure, with orbital interactions leading to a ferroelectric-like lattice instability. Our results provide a microscopic picture connecting electronic structure and phonon anharmonicity in SnSe, and offers precious insights on how electron-phonon and phononphonon interactions may lead to the realization of ultra-low thermal conductivity.

  2. Extending Higgs inflation with TeV scale new physics

    SciTech Connect (OSTI)

    He, Hong-Jian; Xianyu, Zhong-Zhi E-mail: xianyuzhongzhi@gmail.com

    2014-10-01

    Higgs inflation is among the most economical and predictive inflation models, although the original Higgs inflation requires tuning the Higgs or top mass away from its current experimental value by more than 2? deviations, and generally gives a negligible tensor-to-scalar ratio r?10{sup -3} (if away from the vicinity of critical point). In this work, we construct a minimal extension of Higgs inflation, by adding only two new weak-singlet particles at TeV scale, a vector-quark T and a real scalar S. The presence of singlets (T,S) significantly impact the renormalization group running of the Higgs boson self-coupling. With this, our model provides a wider range of the tensor-to-scalar ratio r=O(0.1)-O(10{sup -3}), consistent with the favored r values by either BICEP2 or Planck data, while keeping the successful prediction of the spectral index n{sub s}?0.96. It allows the Higgs and top masses to fully fit the collider measurements. We also discuss implications for searching the predicted TeV-scale vector-quark T and scalar S at the LHC and future high energy pp colliders.

  3. Extending Higgs inflation with TeV scale new physics

    SciTech Connect (OSTI)

    He, Hong-Jian; Xianyu, Zhong-Zhi

    2014-10-10

    Higgs inflation is among the most economical and predictive inflation models, although the original Higgs inflation requires tuning the Higgs or top mass away from its current experimental value by more than 2σ deviations, and generally gives a negligible tensor-to-scalar ratio r∼10{sup −3} (if away from the vicinity of critical point). In this work, we construct a minimal extension of Higgs inflation, by adding only two new weak-singlet particles at TeV scale, a vector-quark T and a real scalar S . The presence of singlets (T, S) significantly impact the renormalization group running of the Higgs boson self-coupling. With this, our model provides a wider range of the tensor-to-scalar ratio r=O(0.1)−O(10{sup −3}) , consistent with the favored r values by either BICEP2 or Planck data, while keeping the successful prediction of the spectral index n{sub s}≃0.96 . It allows the Higgs and top masses to fully fit the collider measurements. We also discuss implications for searching the predicted TeV-scale vector-quark T and scalar S at the LHC and future high energy pp colliders.

  4. Purification of CdZnTe by Electromigration

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

    2015-04-14

    Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 lm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. Furthermore, a CZT detector fabricated from the middle portion of themore » electromigrated CZT boule showed an improved mobility-lifetime product of 0.91 10-2 cm2 /V, compared to that of 1.4 10-3 cm2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.« less

  5. Advanced CdTe Photovoltaic Technology: September 2007 - March 2009

    SciTech Connect (OSTI)

    Barth, K.

    2011-05-01

    During the last eighteen months, Abound Solar (formerly AVA Solar) has enjoyed significant success under the SAI program. During this time, a fully automated manufacturing line has been developed, fabricated and commissioned in Longmont, Colorado. The facility is fully integrated, converting glass and semiconductor materials into complete modules beneath its roof. At capacity, a glass panel will enter the factory every 10 seconds and emerge as a completed module two hours later. This facility is currently undergoing trials in preparation for large volume production of 120 x 60 cm thin film CdTe modules. Preceding the development of the large volume manufacturing capability, Abound Solar demonstrated long duration processing with excellent materials utilization for the manufacture of high efficiency 42 cm square modules. Abound Solar prototype modules have been measured with over 9% aperture area efficiency by NREL. Abound Solar demonstrated the ability to produce modules at industry leading low costs to NREL representatives. Costing models show manufacturing costs below $1/Watt and capital equipment costs below $1.50 per watt of annual manufacturing capacity. Under this SAI program, Abound Solar supported a significant research and development program at Colorado State University. The CSU team continues to make progress on device and materials analysis. Modeling for increased device performance and the effects of processing conditions on properties of CdTe PV were investigated.

  6. Photoconductivity of CdTe Nanocrystal-Based Thin Films. Te2- Ligands Lead To Charge Carrier Diffusion Lengths Over 2 Micrometers

    SciTech Connect (OSTI)

    Crisp, Ryan W.; Callahan, Rebecca; Reid, Obadiah G.; Dolzhnikov, Dmitriy S.; Talapin, Dmitri V.; Rumbles, Garry; Luther, Joseph M.; Kopidakis, Nikos

    2015-11-16

    We report on photoconductivity of films of CdTe nanocrystals (NCs) using time-resolved microwave photoconductivity (TRMC). Spherical and tetrapodal CdTe NCs with tunable size-dependent properties are studied as a function of surface ligand (including inorganic molecular chalcogenide species) and annealing temperature. Relatively high carrier mobility is measured for films of sintered tetrapod NCs (4 cm2/(V s)). Our TRMC findings show that Te2- capped CdTe NCs show a marked improvement in carrier mobility (11 cm2/(V s)), indicating that NC surface termination can be altered to play a crucial role in charge-carrier mobility even after the NC solids are sintered into bulk films.

  7. Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS

    SciTech Connect (OSTI)

    Fei, Ruixiang; Yang, Li; Li, Wenbin; Li, Ju

    2015-10-26

    We predict enormous, anisotropic piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe, and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their piezoelectric coefficients are about one to two orders of magnitude larger than those of other 2D materials, such as MoS{sub 2} and GaSe, and bulk quartz and AlN which are widely used in industry. This enhancement is a result of the unique “puckered” C{sub 2v} symmetry and electronic structure of monolayer group IV monochalcogenides. Given the achieved experimental advances in the fabrication of monolayers, their flexible character, and ability to withstand enormous strain, these 2D structures with giant piezoelectric effects may be promising for a broad range of applications such as nano-sized sensors, piezotronics, and energy harvesting in portable electronic devices.

  8. Epitaxial growth of CZT(S,Se) on silicon

    DOE Patents [OSTI]

    Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

    2016-03-15

    Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

  9. Fabrication and Physics of CdTe Devices by Sputtering: Final Report, 1 March 2005 - 30 November 2008

    SciTech Connect (OSTI)

    Compaan, A.; Collins, R.; Karpov, V.; Giolando, D.

    2009-04-01

    Work to understand CdS/CdTe solar cell device physics; increase magnetron sputtering rate (while keeping high device quality); reduce thickness of CdTe layers (while keeping voltage and fill factor).

  10. Growth of CdTe thin films on graphene by close-spaced sublimation method

    SciTech Connect (OSTI)

    Jung, Younghun; Yang, Gwangseok; Kim, Jihyun, E-mail: hyunhyun7@korea.ac.kr [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of)] [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Chun, Seungju; Kim, Donghwan [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)] [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

    2013-12-02

    CdTe thin films grown on bi-layer graphene were demonstrated by using the close-spaced sublimation method, where CdTe was selectively grown on the graphene. The density of the CdTe domains was increased with increasing the number of the defective sites in the graphene, which was controlled by the duration of UV exposure. The CdTe growth rate on the bi-layer graphene electrodes was 400?nm/min with a bandgap energy of 1.451.49?eV. Scanning electron microscopy, micro-Raman spectroscopy, micro-photoluminescence, and X-ray diffraction technique were used to confirm the high quality of the CdTe thin films grown on the graphene electrodes.

  11. Deformation potentials of CdSe quantum dots

    SciTech Connect (OSTI)

    Li, Jingbo; Wang, Lin-Wang

    2004-06-02

    The size dependent deformation potentials of CdSe quantum dots are studied by first principle and semi-empirical pseudopotentials calculations. They find that the amplitude of the quantum dot deformation potential is only slightly larger than the bulk value, and this increase is mostly caused by the off {Lambda} point deformation potentials in the bulk, which are larger in amplitude than the {Lambda} point deformation potential.

  12. Quantum confined acceptors and donors in InSe nanosheets

    SciTech Connect (OSTI)

    Mudd, G. W.; Patan, A. Makarovsky, O.; Eaves, L.; Kudrynskyi, Z. R.; Kovalyuk, Z. D.; Fay, M. W.; Zlyomi, V.; Falko, V.

    2014-12-01

    We report on the radiative recombination of photo-excited carriers bound at native donors and acceptors in exfoliated nanoflakes of nominally undoped rhombohedral ?-polytype InSe. The binding energies of these states are found to increase with the decrease in flake thickness, L. We model their dependence on L using a two-dimensional hydrogenic model for impurities and show that they are strongly sensitive to the position of the impurities within the nanolayer.

  13. Ba{sub 2}TeO: A new layered oxytelluride

    SciTech Connect (OSTI)

    Besara, T.; Ramirez, D.; Sun, J.; Whalen, J.B.; Tokumoto, T.D.; McGill, S.A.; Singh, D.J.; Siegrist, T.

    2015-02-15

    Single crystals of the new semiconducting oxytelluride phase, Ba{sub 2}TeO, were synthesized from barium oxide powder and elemental tellurium in a molten barium metal flux. Ba{sub 2}TeO crystallizes in tetragonal symmetry with space group P4/nmm (#129), a=5.0337(1) Å, c=9.9437(4) Å, Z=2. The crystals were characterized by single crystal x-ray diffraction, heat capacity and optical measurements. The optical measurements along with electronic band structure calculations indicate semiconductor behavior with a band gap of 2.93 eV. Resistivity measurements show that Ba{sub 2}TeO is highly insulating. - Graphical abstract: Starting from a simple stacking of rocksalt layers, the final structure of Ba{sub 2}TeO can be obtained by accommodation of structural strain via atom displacements. Density of states calculations and optical absorbance measurements show that Ba{sub 2}TeO has a band gap of 2.93 eV, indicative of semiconductor behavior. - Highlights: • Single crystal synthesis of a new layered oxytelluride, Ba{sub 2}TeO. • The structure features inverse PbO-type BaO layers and NaCl-type BaTe layers. • Optical absorbance show Ba{sub 2}TeO to be a semiconductor with a 2.93 eV gap. • Density of states indicate a small hybridization between Te 5p and Ba 5d states. • The BaTe (BaO) layers dominate the heat capacity at low (high) temperatures.

  14. American Ref-Fuel of SE CT Biomass Facility | Open Energy Information

    Open Energy Info (EERE)

    Ref-Fuel of SE CT Biomass Facility Jump to: navigation, search Name American Ref-Fuel of SE CT Biomass Facility Facility American Ref-Fuel of SE CT Sector Biomass Facility Type...

  15. V-181: Oracle Java SE Critical Patch Update Advisory - June 2013...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    1: Oracle Java SE Critical Patch Update Advisory - June 2013 V-181: Oracle Java SE Critical Patch Update Advisory - June 2013 June 19, 2013 - 1:06am Addthis PROBLEM: Oracle Java SE...

  16. Bi-Se doped with Cu, p-type semiconductor

    DOE Patents [OSTI]

    Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

    2013-08-20

    A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

  17. Pressure-dependent Optical Behaviors of Colloidal CdSe Nanoplatelets...

    Office of Scientific and Technical Information (OSTI)

    dependent Optical Behaviors of Colloidal CdSe Nanoplatelets Citation Details In-Document Search Title: Pressure-dependent Optical Behaviors of Colloidal CdSe Nanoplatelets Authors: ...

  18. The effect of structural vacancies on the thermoelectric properties of (Cu?Te){sub 1x}(Ga?Te?)x

    SciTech Connect (OSTI)

    Ye, Zuxin; Young Cho, Jung; Tessema, Misle M.; Salvador, James R.; Waldo, Richard A.; Wang, Hsin; Cai, Wei

    2013-05-01

    We have studied the effects of structural vacancies on the thermoelectric properties of the ternary compounds (Cu?Te)1x(Ga?Te?)x (x=0.5, 0.55, 0.571, 0.6, 0.625, 0.667 and 0.75), which are solid solutions found in the pseudo-binary phase diagram for Cu?Te and Ga?Te?, and possesses tunable structural vacancy concentrations. This materials system is not suitable due to the cost and scarcity of the constituent elements, but the vacancy behavior is well understood and will provide a valuable test case for other systems more suitable from the standpoint of cost and abundance of raw materials, which also possesses these vacancy features, but whose structural characterization is lacking at this stage. We find that the nominally defect free phase CuGaTe? possess the highest ZT (ZT=ST/??, where S is the Seebeck coefficient and ? is the electrical resistivity ? is the thermal conductivity and T is the absolute temperature) which approaches 1 at 840 K and seems to continuously increase above this temperature. This result is due to the unexpectedly low thermal conductivity found for this material at high temperature. The low thermal conductivity was caused by strong Umklapp (thermally resistive scattering processes involving three phonons) phonon scattering. We find that due to the coincidentally strong scattering of carriers by the structural defects that higher concentrations of these features lead to poor electrical transport properties and decreased ZT. - Graphical abstract: Thermal conductivity and zT as a function of temperature for a series of compounds of the type (Cu?Te)1x(Ga?Te?)x (x=0.5, 0.55, 0.571, 0.6, 0.625, 0.667 and 0.75). Highlights: All the samples show p-type semiconducting behavior in the temperature dependence of the Seebeck and Hall coefficients. The increased carrier concentration and the introduction of vacancies diminish the carrier mobility and power factor. The low temperature k decreases significantly as the Ga?Te? content increases due to increasing point defects. The highest ZT ~ 1.0 at 840 K among the samples in this study was found in CuGaTe?, which contains no vacancies.

  19. Evidence for charge Kondo effect in superconducting Tl-doped PbTe (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Evidence for charge Kondo effect in superconducting Tl-doped PbTe Citation Details In-Document Search Title: Evidence for charge Kondo effect in superconducting Tl-doped PbTe We report results of low-temperature thermodynamic and transport measurements of Pb{sub 1-x}Tl{sub x}Te single crystals for Tl concentrations up to the solubility limit of approximately x = 1.5%. For all doped samples, we observe a low-temperature resistivity upturn that scales in magnitude

  20. NuTeV Anomaly Helps Shed Light on Physics of the Nucleus | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NuTeV Anomaly Helps Shed Light on Physics of the Nucleus NuTeV Anomaly Helps Shed Light on Physics of the Nucleus NEWPORT NEWS, VA, June 29, 2009 - A new calculation clarifies the complicated relationship between protons and neutrons in the atomic nucleus and offers a fascinating resolution of the famous NuTeV Anomaly. The calculation, published in the journal Physical Review Letters on June 26, was carried out by a collaboration of researchers from the Department of Energy's Thomas Jefferson

  1. Chapter 1.19: Cadmium Telluride Photovoltaic Thin Film: CdTe

    SciTech Connect (OSTI)

    Gessert, T. A.

    2012-01-01

    The chapter reviews the history, development, and present processes used to fabricate thin-film, CdTe-based photovoltaic (PV) devices. It is intended for readers who are generally familiar with the operation and material aspects of PV devices but desire a deeper understanding of the process sequences used in CdTe PV technology. The discussion identifies why certain processes may have commercial production advantages and how the various process steps can interact with each other to affect device performance and reliability. The chapter concludes with a discussion of considerations of large-area CdTe PV deployment including issues related to material availability and energy-payback time.

  2. Nucleation of AgInSbTe films employed in phase-change media (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Nucleation of AgInSbTe films employed in phase-change media Citation Details In-Document Search Title: Nucleation of AgInSbTe films employed in phase-change media In phase-change technology small volumes of a chalcogenide material are switched between amorphous and crystalline states by local heating with a short laser or current pulses. AgInSbTe is an alloy frequently used in optical data storage, which could also be applied in electronic data storage. For those

  3. ON THE ENERGY SPECTRA OF GeV/TeV COSMIC RAY LEPTONS (Journal Article) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect ON THE ENERGY SPECTRA OF GeV/TeV COSMIC RAY LEPTONS Citation Details In-Document Search Title: ON THE ENERGY SPECTRA OF GeV/TeV COSMIC RAY LEPTONS Recent observations of cosmic ray (CR) electrons from several instruments have revealed various degrees of deviation in the measured electron energy distribution from a simple power law, in the form of an excess around 0.1-1 TeV energies. An even more prominent deviation and excess has been observed in the fraction of CR positrons

  4. On the Energy Spectra of GeV/TeV Cosmic Ray Leptons (Journal Article) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect On the Energy Spectra of GeV/TeV Cosmic Ray Leptons Citation Details In-Document Search Title: On the Energy Spectra of GeV/TeV Cosmic Ray Leptons Recent observations of cosmic ray electrons from several instruments have revealed various degrees of deviation in the measured electron energy distribution from a simple power-law, in a form of an excess around 0.1 to 1 TeV energies. An even more prominent deviation and excess has been observed in the fraction of cosmic ray

  5. Ultrafast terahertz-induced response of GeSbTe phase-change materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect terahertz-induced response of GeSbTe phase-change materials Citation Details In-Document Search Title: Ultrafast terahertz-induced response of GeSbTe phase-change materials The time-resolved ultrafast electric field-driven response of crystalline and amorphous GeSbTe films has been measured all-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub-picosecond time-scale. Utilizing the near-band-gap

  6. Magnetooptical study of CdSe/ZnMnSe semimagnetic quantum-dot ensembles with n-type modulation doping

    SciTech Connect (OSTI)

    Reshina, I. I. Ivanov, S. V.

    2014-12-15

    Magnetic and polarization investigations of the photoluminescence and resonant electron spin-flip Raman scattering in ensembles of self-organized CdSe/ZnMnSe semimagnetic quantum dots with n-type modulation doping are carried out. It is demonstrated that exciton transitions contribute to the photoluminescence band intensity, along with the transitions of trions in the singlet state. In the Hanle-effect measurements, negative circular polarization in zero magnetic field is observed, which is related to the optical orientation of a trion heavy hole. The lifetime and spin-relaxation time of a heavy hole are estimated as ?3 and ?1 ps, respectively. Such short times are assumed to be due to Auger recombination with the excitation of an intrinsic transition in a Mn{sup 2+} ion. Investigations of the photoluminescence-maximum intensity and shift in a longitudinal magnetic field at the ?{sup ?}?{sup +} and ?{sup ?}?{sup ?} polarizations reveal the pronounced spin polarization of electrons. Under resonant excitation conditions, a sharp increase in the photoluminescence-band maximum intensity at ?{sup ?} excitation polarization over the ?{sup +} one is observed. The Raman scattering peak at the electron spin-flip transition is observed upon resonant excitation in a transverse magnetic field in crossed linear polarizations. This peak is shown to be a Brillouin function of a magnetic field.

  7. Intrinsic Rashba-like splitting in asymmetric Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} heterogeneous topological insulator films

    SciTech Connect (OSTI)

    Liu, Xiaofei; Guo, Wanlin

    2014-08-25

    We show by density functional theory calculations that asymmetric hetero-stacking of Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} films can modulate the topological surface states. Due to the structure inversion asymmetry, an intrinsic Rashba-like splitting of the conical surface bands is aroused. While such splitting in homogeneous Bi{sub 2}Te{sub 3}-class topological insulators can be realized in films with more than three quintuple layers under external electric fields, the hetero-stacking breaks the limit of thickness for preserving the topological nature into the thinnest two quintuple layers. These results indicate that the hetero-stacking can serve as an efficient strategy for spin-resolved band engineering of topological insulators.

  8. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Citation Details In-Document ... Publication Date: 2014-07-08 OSTI Identifier: 1136695 Report ...

  9. Thermoelectric properties of AgSbTe? from first-principles calculations

    SciTech Connect (OSTI)

    Rezaei, Nafiseh; Akbarzadeh, Hadi; Hashemifar, S. Javad

    2014-09-14

    The structural, electronic, and transport properties of AgSbTe? are studied by using full-relativistic first-principles electronic structure calculation and semiclassical description of transport parameters. The results indicate that, within various exchange-correlation functionals, the cubic Fd3?m and trigonal R3?m structures of AgSbTe? are more stable than two other considered structures. The computed Seebeck coefficients at different values of the band gap and carrier concentration are accurately compared with the available experimental data to speculate a band gap of about 0.10.35 eV for AgSbTe? compound, in agreement with our calculated electronic structure within the hybrid HSE (Heyd-Scuseria-Ernzerhof) functional. By calculating the semiclassical Seebeck coefficient, electrical conductivity, and electronic part of thermal conductivity, we present the theoretical upper limit of the thermoelectric figure of merit of AgSbTe? as a function of temperature and carrier concentration.

  10. The tin impurity in Bi0.5Sb1.5Te3 alloys

    Broader source: Energy.gov [DOE]

    Extends work on tin to p-type thermoelectric alloys of formula Bi(2-x)Sb(x)Te(3) doped with Sn. Both single crystals and polycrystals prepared using powder metallurgical techniques are studied and properties reported.

  11. Ultrathin nanosheets of CrSiTe3. A semiconducting two-dimensional...

    Office of Scientific and Technical Information (OSTI)

    In this work we for the first time exfoliate the CrSiTe3, a bulk ferromagnetic semiconductor, to mono- and few-layer 2D crystals onto a SiSiO2 substrate. The Raman spectra show ...

  12. Thermoelectric Enhancement in PbTe with K or Na codoping from...

    Office of Scientific and Technical Information (OSTI)

    Thermoelectric Enhancement in PbTe with K or Na codoping from tuning the interaction of the light- and heavy-hole valence bands Citation Details In-Document Search Title: ...

  13. V-183: Cisco TelePresence TC and TE Bugs Let Remote Users Deny...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Remote Users Deny Service and Remote Adjacent Authenticated Users Gain Root Shell Access V-183: Cisco TelePresence TC and TE Bugs Let Remote Users Deny Service and Remote Adjacent...

  14. Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires

    SciTech Connect (OSTI)

    Guo, Shaojun; Andrew F. Fidler; He, Kai; Su, Dong; Chen, Gen; Lin, Qianglu; Pietryga, Jeffrey M.; Klimov, Victor I.

    2015-11-06

    In this study, the rational design and synthesis of narrow-gap colloidal semiconductor nanocrystals (NCs) is an important step toward the next generation of solution-processable photovoltaics, photodetectors, and thermoelectric devices. SnTe NCs are particularly attractive as a Pb-free alternative to NCs of narrow-gap lead chalcogenides. Previous synthetic efforts on SnTe NCs have focused on spherical nanoparticles. Here we report new strategies for synthesis of SnTe NCs with shapes tunable from highly monodisperse nanocubes, to nanorods (NRs) with variable aspect ratios, and finally to long, straight nanowires (NWs). Reaction at high temperature quickly forms thermodynamically favored nanocubes, but low temperatures lead to elongated particles. Transmission electron microscopy studies of reaction products at various stages of the synthesis reveal that the growth and shape-focusing of monodisperse SnTe nanocubes likely involves interparticle ripening, while directional growth of NRs and NWs may be initiated by particle dimerization via oriented attachment.

  15. Giant and tunable valley degeneracy splitting in MoTe 2 (Journal...

    Office of Scientific and Technical Information (OSTI)

    This content will become publicly available on September 7, 2016 Title: Giant and tunable valley degeneracy splitting in MoTe 2 Authors: Qi, Jingshan ; Li, Xiao ; Niu, Qian ; Feng, ...

  16. Ultrafast terahertz-induced response of GeSbTe phase-change materials...

    Office of Scientific and Technical Information (OSTI)

    Title: Ultrafast terahertz-induced response of GeSbTe phase-change materials The time-reso... pulses as a means of biasing phase-change materials on a sub-picosecond time-scale. ...

  17. Structural analysis of Cr aggregation in ferromagnetic semiconductor (Zn,Cr)Te

    SciTech Connect (OSTI)

    Kobayashi, H.; Yamawaki, K.; Nishio, Y.; Kanazawa, K.; Kuroda, S.; Mitome, M.; Bando, Y.

    2013-12-04

    The Cr aggregation in a ferromagnetic semiconductor (Zn,Cr)Te was studied by performing precise analyses using TEM and XRD of microscopic structure of the Cr-aggregated regions formed in iodine-doped Zn{sub 1?x}Cr{sub x}Te films with a relatively high Cr composition x ? 0.2. It was found that the Cr-aggregated regions are composed of Cr{sub 1??}Te nanocrystals of the hexagonal structure and these hexagonal precipitates are stacked preferentially on the (111)A plane of the zinc-blende (ZB) structure of the host ZnTe crystal with its c-axis nearly parallel to the (111){sub ZB} plane.

  18. THE EI'IVIRONMENTAL QUALITY COMPANY CORPCl~V\\TE OFFICE

    Office of Environmental Management (EM)

    EI'IVIRONMENTAL QUALITY COMPANY CORPClVTE OFFICE Ill 36255 MICIat:l;1 '1 J.VENIJE WAYNE , IVICHICA148 '184 te800-5925489 tit fax 800-592-5329 February 20, 2013...

  19. Atomic-force microscopy and photoluminescence of nanostructured CdTe

    SciTech Connect (OSTI)

    Babentsov, V.; Sizov, F.; Franc, J.; Luchenko, A.; Svezhentsova, E. Tsybrii, Z.

    2013-09-15

    Low-dimensional CdTe nanorods with a diameter of 10-30 nm and a high aspect ratio that reaches 100 are studied. The nanorods are grown by the physical vapor transport method with the use of Bi precipitates on the substrates. In addition, thin films of closely packed CdTe nanorods with the transverse dimensions {approx}(100-200) nm are grown. Atomic-force microscopy shows that the cross sections of all of the nanorods were hexagonally shaped. By photoluminescence measurements, the inference about the wurtzite structure of CdTe is supported, and the structural quality, electron-phonon coupling, and defects are analyzed. On the basis of recent ab initio calculations, the nature of defects responsible for the formation of deep levels in the CdTe layers and bulk crystals are analyzed.

  20. Photoluminescence study of the substitution of Cd by Zn during the growth by atomic layer epitaxy of alternate CdSe and ZnSe monolayers

    SciTech Connect (OSTI)

    Hernndez-Caldern, I.; Salcedo-Reyes, J. C.

    2014-05-15

    We present a study of the substitution of Cd atoms by Zn atoms during the growth of alternate ZnSe and CdSe compound monolayers (ML) by atomic layer epitaxy (ALE) as a function of substrate temperature. Samples contained two quantum wells (QWs), each one made of alternate CdSe and ZnSe monolayers with total thickness of 12 ML but different growth parameters. The QWs were studied by low temperature photoluminescence (PL) spectroscopy. We show that the Cd content of underlying CdSe layers is affected by the exposure of the quantum well film to the Zn flux during the growth of ZnSe monolayers. The amount of Cd of the quantum well film decreases with higher exposures to the Zn flux. A brief discussion about the difficulties to grow the Zn{sub 0.5}Cd{sub 0.5}Se ordered alloy (CuAu-I type) by ALE is presented.

  1. NREL Collaboration Boosts Potential for CdTe Solar Cells - News Releases |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NREL NREL Collaboration Boosts Potential for CdTe Solar Cells February 29, 2016 A critical milestone has been reached in cadmium telluride (CdTe) solar cell technology, helping pave the way for solar energy to directly compete with electricity generated by conventional energy sources. Scientists at the Energy Department's National Renewable Energy Laboratory (NREL) collaborated with researchers at Washington State University and the University of Tennessee to improve the maximum voltage

  2. Electronic correlation and magnetism in the ferromagnetic metal Fe 3 GeTe 2

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Electronic correlation and magnetism in the ferromagnetic metal Fe 3 GeTe 2 Citation Details In-Document Search This content will become publicly available on April 5, 2017 Title: Electronic correlation and magnetism in the ferromagnetic metal Fe 3 GeTe 2 Authors: Zhu, Jian-Xin ; Janoschek, Marc ; Chaves, D. S. ; Cezar, J. C. ; Durakiewicz, Tomasz ; Ronning, Filip ; Sassa, Yasmine ; Mansson, Martin ; Scott, B. L. ; Wakeham, N. ; Bauer, Eric D. ; Thompson,

  3. Spin glass in semiconducting KFe1.05Ag0.88Te2 single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ryu, H.; Lei, H.; Klobes, B.; Warren, J. B.; Hermann, R. P.; Petrovic, C.

    2015-05-26

    We report discovery of KFe1.05Ag0.88Te2 single crystals with semiconducting spin glass ground state. Composition and structure analysis suggest nearly stoichiometric I4/mmm space group but allow for the existence of vacancies, absent in long range semiconducting antiferromagnet KFe1.05Ag0.88Te2. The subtle change in stoichometry in Fe/Ag sublattice changes magnetic ground state but not conductivity, giving further insight into the semiconducting gap mechanism.

  4. Deformation and shape transitions in hot rotating neutron deficient Te isotopes

    SciTech Connect (OSTI)

    Aggarwal, Mamta; Mazumdar, I.

    2009-08-15

    Evolution of the nuclear shapes and deformations under the influence of temperature and rotation is investigated in Te isotopes with neutron number ranging from the proton drip line to the stability valley. Spin dependent critical temperatures for the shape transitions in Te nuclei are computed. Shape transitions from prolate at low temperature and spin to oblate via triaxiality are seen with increasing neutron number and spin.

  5. Diluted magnetic semiconductors based on Sb2-xVxTe3 | Energy Frontier

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Centers Diluted magnetic semiconductors based on Sb2-xVxTe3 Home Author: J. S. Dyck, P. Hajek, P. Lostak, C. Uher Year: 2002 Abstract: We report on a diluted magnetic semiconductor based on the Sb2Te3 tetradymite structure doped with very low concentrations of vanadium (1-3 at. %). The anomalous transport behavior and robust magnetic hysteresis loops observed in magnetotransport and magnetic measurements are experimental manifestations of the ferromagnetic state in these materials.

  6. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Terahertz-Induced Response of GeSbTe Phase-Change Materials Citation Details In-Document Search Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Authors: Shu, Michael J. ; Zalden, Peter ; Chen, Frank ; Weems, Ben ; Chatzakis, Ioannis ; Xiong, Feng ; Jeyasingh, Rakesh ; Hoffmann, Matthias C. ; Pop, Eric ; Wong, H.-S.Philip ; Wuttig, Matthias ; Lindenberg, Aaron M. Publication Date: 2014-07-08 OSTI Identifier: 1136695 Report

  7. Ultrathin nanosheets of CrSiTe3. A semiconducting two-dimensional

    Office of Scientific and Technical Information (OSTI)

    ferromagnetic material (Journal Article) | SciTech Connect Ultrathin nanosheets of CrSiTe3. A semiconducting two-dimensional ferromagnetic material Citation Details In-Document Search This content will become publicly available on November 27, 2016 Title: Ultrathin nanosheets of CrSiTe3. A semiconducting two-dimensional ferromagnetic material Finite range ferromagnetism and antiferromagnetism in two-dimensional (2D) systems within an isotropic Heisenberg model at non-zero temperature were

  8. PbTe/TAGS RTG Mars Environmental Survey (MESUR) mission

    SciTech Connect (OSTI)

    Schock, A. )

    1993-01-10

    The paper describes the results of studies on an RTG option for powering the global network of unmanned landers for NASA's Mars Environmental Survey (MESUR) mission. RTGs are essentially unaffected by diurnal and seasonal variations, Martian sandstorms, and landing site latitudes, and their waste heat can stabilize the temperatures of the landers and their payload. The RTG designs described in this paper are based on PbTe/TAGS thermoelectric elements, in contast to the SiGe-based RTGs the author described in previous publications. The presently described RTGs differ not only in the choice of thermoelectric materials but also in the use of much lower operating temperatures, conductive rather than radiative heat transfer, an inert cover gas instead of vacuum in the RTG's converter, and fibrous instead of multifoil thermal insulation. As in a previous Teledyne design, the Fairchild designs described in this paper employ flight-proven General Purpose Source modules and Close-Pack Arrays of thermoelectric converter modules. Illustrative point designs of RTGs producing 41 and 51 watts(e) at 28 volts are presented. The presented performance parameters were derived by detailed thermal, thermoelectric, and electrical analyses (including radiator geometry optimization) described in the paper. The Fairchild study showed that, with appropriate modifications, the Teledyne design can be scaled up to higher power levels, and it identified solutions to ensure adequate fuel clad ductility at launch temperatures and adequate thermal conductance from the thermoelectric cold ends to the RTG housing.

  9. Ultrathin nanosheets of CrSiTe3. A semiconducting two-dimensional ferromagnetic material

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lin, Ming -Wei; Zhung, Houlong L.; Yan, Jiaqiang; Ward, Thomas Zac; Puretzky, Alexander A.; Rouleau, Christopher M.; Gai, Zheng; Liang, Liangbo; Meunier, Vincent; Ganesh, Panchapakesan; et al

    2015-11-27

    Finite range ferromagnetism and antiferromagnetism in two-dimensional (2D) systems within an isotropic Heisenberg model at non-zero temperature were originally proposed to be impossible. However, recent theoretical studies using an Ising model have recently shown that 2D magnetic crystals can exhibit magnetism. Experimental verification of existing 2D magnetic crystals in this system has remained elusive. In this work we for the first time exfoliate the CrSiTe3, a bulk ferromagnetic semiconductor, to mono- and few-layer 2D crystals onto a Si/SiO2 substrate. The Raman spectra show the good stability and high quality of the exfoliated flakes, consistent with the computed phonon spectra ofmore » 2D CrSiTe3, giving a strong evidence for the existence of 2D CrSiTe3 crystals. When the thickness of the CrSiTe3 crystals is reduced to few-layers, we observed a clear change in resistivity at 80~120 K, consistent with the theoretical calculations on the Curie temperature (Tc) of ~80 K for the magnetic ordering of 2D CrSiTe3 crystals. As a result, the ferromagnetic mono- and few-layer 2D CrSiTe3 indicated here should enable numerous applications in nano-spintronics.« less

  10. Ion-beam treatment to prepare surfaces of p-CdTe films

    DOE Patents [OSTI]

    Gessert, Timothy A.

    2001-01-01

    A method of making a low-resistance electrical contact between a p-CdTe layer and outer contact layers by ion beam processing comprising: a) placing a CdS/CdTe device into a chamber and evacuating the chamber; b) orienting the p-CdTe side of the CdS/CdTe layer so that it faces apparatus capable of generating Ar atoms and ions of preferred energy and directionality; c) introducing Ar and igniting the area of apparatus capable of generating Ar atoms and ions of preferred energy and directionality in a manner so that during ion exposure, the source-to-substrate distance is maintained such that it is less than the mean-free path or diffusion length of the Ar atoms and ions at the vacuum pressure; d) allowing exposure of the p-CdTe side of the device to said ion beam for a period less than about 5 minutes; and e) imparting movement to the substrate to control the real uniformity of the ion-beam exposure on the p-CdTe side of the device.

  11. Oxygen Incorporation During Fabrication of Substrate CdTe Photovoltaic Devices: Preprint

    SciTech Connect (OSTI)

    Duenow, J. N.; Dhere, R. G.; Kuciauskas, D.; Li, J. V.; Pankow, J. W.; DeHart, C. M.; Gessert, T. A.

    2012-06-01

    Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower ({approx}6%-8%) than those of high-performance superstrate devices ({approx}17%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10%.

  12. Enhanced thermoelectric performance in Cd doped CuInTe{sub 2} compounds

    SciTech Connect (OSTI)

    Cheng, N.; Liu, R.; Bai, S.; Shi, X. Chen, L.

    2014-04-28

    CuIn{sub 1?x}Cd{sub x}Te{sub 2} materials (x?=?0, 0.02, 0.05, and 0.1) are prepared using melting-annealing method and the highly densified bulk samples are obtained through Spark Plasma Sintering. The X-ray diffraction data confirm that nearly pure chalcopyrite structures are obtained in all the samples. Due to the substitution of Cd at In sites, the carrier concentration is greatly increased, leading to much enhanced electrical conductivity and power factor. The single parabolic band model is used to describe the electrical transport properties of CuInTe{sub 2} and the low temperature Hall mobility is also modeled. By combing theoretical model and experiment data, the optimum carrier concentration in CuInTe{sub 2} is proposed to explain the greatly enhanced power factors in the Cd doped CuInTe{sub 2}. In addition, the thermal conductivity is reduced by extra phonon scattering due to the atomic mass and radius fluctuations between Cd and In atoms. The maximum zTs are observed in CuIn{sub 0.98}Cd{sub 0.02}Te{sub 2} and CuIn{sub 0.9}Cd{sub 0.1}Te{sub 2} samples, which are improved by over 100% at room temperature and around 20% at 600?K.

  13. DEGREE-SCALE GeV 'JETS' FROM ACTIVE AND DEAD TeV BLAZARS

    SciTech Connect (OSTI)

    Neronov, A.; Semikoz, D.; Kachelriess, M.; Ostapchenko, S.; Elyiv, A.

    2010-08-20

    We show that images of TeV blazars in the GeV energy band should contain, along with point-like sources, degree-scale jet-like extensions. These GeV extensions are the result of electromagnetic cascades initiated by TeV {gamma}-rays interacting with extragalactic background light and the deflection of the cascade electrons/positrons in extragalactic magnetic fields (EGMFs). Using Monte Carlo simulations, we study the spectral and timing properties of the degree-scale extensions in simulated GeV band images of TeV blazars. We show that the brightness profile of such degree-scale extensions can be used to infer the light curve of the primary TeV {gamma}-ray source over the past 10{sup 7} yr, i.e., over a time scale comparable to the lifetime of the parent active galactic nucleus. This implies that the degree-scale jet-like GeV emission could be detected not only near known active TeV blazars, but also from 'TeV blazar remnants', whose central engines were switched off up to 10 million years ago. Since the brightness profile of the GeV 'jets' depends on the strength and the structure of the EGMF, their observation provides additional information about the EGMF.

  14. Structural characterization of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} as a function of temperature using neutron powder diffraction and extended X-ray absorption fine structure techniques

    SciTech Connect (OSTI)

    Mansour, A. N.; Wong-Ng, W.; Huang, Q.; Tang, W.; Thompson, A.; Sharp, J.

    2014-08-28

    The structure of Bi{sub 2}Te{sub 3} (Seebeck coefficient Standard Reference Material (SRM™ 3451)) and the related phase Sb{sub 2}Te{sub 3} have been characterized as a function of temperature using the neutron powder diffraction (NPD) and the extended X-ray absorption fine structure (EXAFS) techniques. The neutron structural studies were carried out from 20 K to 300 K for Bi{sub 2}Te{sub 3} and from 10 K to 298 K for Sb{sub 2}Te{sub 3}. The EXAFS technique for studying the local structure of the two compounds was conducted from 19 K to 298 K. Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} are isostructural, with a space group of R3{sup ¯}m. The structure consists of repeated quintuple layers of atoms, Te2-M-Te1-M-Te2 (where M = Bi or Sb) stacking along the c-axis of the unit cell. EXAFS was used to examine the bond distances and static and thermal disorders for the first three shells of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} as a function of temperature. The temperature dependencies of thermal disorders were analyzed using the Debye and Einstein models for lattice vibrations. The Debye and Einstein temperatures for the first two shells of Bi{sub 2}Te{sub 3} are similar to those of Sb{sub 2}Te{sub 3} within the uncertainty in the data. However, the Debye and Einstein temperatures for the third shell of Bi-Bi are significantly lower than those of the third shell of Sb-Sb. The Einstein temperature for the third shell is consistent with a soft phonon mode in both Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3}. The lower Einstein temperature of Bi-Bi relative to Sb-Sb is consistent with the lower value of thermal conductivity of Bi{sub 2}Te{sub 3} relative to Sb{sub 2}Te{sub 3}.

  15. First-epoch VLBA imaging of 20 new TeV blazars

    SciTech Connect (OSTI)

    Piner, B. Glenn; Edwards, Philip G.

    2014-12-10

    We present Very Long Baseline Array (VLBA) images of 20 TeV blazars not previously well studied on the parsec scale. All 20 of these sources are high-frequency peaked BL Lac objects (HBLs). Observations were made between August and December of 2013 at a frequency of 8.4 GHz. These observations represent the first epoch of a VLBA monitoring campaign on these blazars, and they significantly increase the fraction of TeV HBLs studied with high-resolution imaging. The peak very long baseline interferometry (VLBI) flux densities of these sources range from ?10 to ?100 mJy bm{sup 1}, and parsec-scale jet structure is detected in all sources. About half of the VLBI cores are resolved, with brightness temperature upper limits of a few times 10{sup 10} K, and we find that a brightness temperature of ?2 10{sup 10} K is consistent with the VLBI data for all but one of the sources. Such brightness temperatures do not require any relativistic beaming to reduce the observed value below commonly invoked intrinsic limits; however, the lack of detection of counterjets does place a modest limit on the bulk Lorentz factor of ? ? 2. These data are thus consistent with a picture where weak-jet sources like the TeV HBLs develop significant velocity structures on parsec scales. We also extend consideration to the full sample of TeV HBLs by combining the new VLBI data with VLBI and gamma-ray data from the literature. By comparing measured VLBI and TeV fluxes to samples with intrinsically uncorrelated luminosities generated by Monte Carlo simulations, we find a marginally significant correlation between the VLBI and TeV fluxes for the full TeV HBL sample.

  16. Development of a Total Energy, Environment and Asset Management (TE2AM tm) Curriculum

    SciTech Connect (OSTI)

    2012-12-31

    The University of Wisconsin Department of Engineering Professional Development (EPD) has completed the sponsored project entitled, Development of a Total Energy, Environment and Asset Management (TE2AM™) Curriculum. The project involved the development of a structured professional development program to improve the knowledge, skills, capabilities, and competencies of engineers and operators of commercial buildings. TE2AM™ advances a radically different approach to commercial building design, operation, maintenance, and end-­‐of-­‐life disposition. By employing asset management principles to the lifecycle of a commercial building, owners and occupants will realize improved building performance, reduced energy consumption and positive environmental impacts. Through our commercialization plan, we intend to offer TE2AM™ courses and certificates to the professional community and continuously improve TE2AM™ course materials. The TE2AM™ project supports the DOE Strategic Theme 1 -­‐ Energy Security; and will further advance the DOE Strategic Goal 1.4 Energy Productivity. Through participation in the TE2AM™ curriculum, engineers and operators of commercial buildings will be eligible for a professional certificate; denoting the completion of a prescribed series of learning activities. The project involved a comprehensive, rigorous approach to curriculum development, and accomplished the following goals: 1. Identify, analyze and prioritize key learning needs of engineers, architects and technical professionals as operators of commercial buildings. 2. Design and develop TE2AM™ curricula and instructional strategies to meet learning needs of the target learning community. 3. Establish partnerships with the sponsor and key stakeholders to enhance the development and delivery of learning programs. 4. Successfully commercialize and sustain the training and certificate programs for a substantial time following the term of the award. The project team was successful in achieving the goals and deliverables set forth in the original proposal. Though attempts were made to adhere to the original project timeline, the team requested, and was granted a 6-­‐month project extension, during which time the project was completed.

  17. Intersubband absorption in CdSe/Zn{sub x}Cd{sub y}Mg{sub 1-x-y}Se self-assembled quantum dot multilayers

    SciTech Connect (OSTI)

    Shen, A.; Lu, H.; Charles, W.; Yokomizo, I.; Tamargo, M. C.; Franz, K. J.; Gmachl, C.; Zhang, S. K.; Zhou, X.; Alfano, R. R.; Liu, H. C.

    2007-02-12

    The authors report the observation of intersubband absorption in multilayers of CdSe/Zn{sub x}Cd{sub y}Mg{sub 1-x-y}Se self-assembled quantum dots. The samples were grown by molecular beam epitaxy on InP substrates. For samples with the CdSe dot layers doped with Cl and with the deposited CdSe equivalent layer thickness between 5.2 and 6.9 ML, peak absorption between 2.5 and 3.5 {mu}m was observed. These materials are promising for intersubband devices operating in the mid- and near-infrared ranges.

  18. Electronic inhomogeneity and Ag:Sb imbalance of Ag1-yPb18Sb1+zTe20

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    high-performance thermoelectrics elucidated by 125Te and 207Pb NMR | Energy Frontier Research Centers Electronic inhomogeneity and Ag:Sb imbalance of Ag1-yPb18Sb1+zTe20 high-performance thermoelectrics elucidated by 125Te and 207Pb NMR Home Author: E.M. Levin, B.A. Cook, K. Ahn, M.G. Kanatzidis, K. Schmidt-Rohr Year: 2009 Abstract: Using magic-angle spinning 125Te and 207Pb NMR, we have discovered the presence of two phases of approximately tenfold different free-electron concentration, n,

  19. Reduction of Fermi level pinning and recombination at polycrystalline CdTe surfaces by laser irradiation

    SciTech Connect (OSTI)

    Simonds, Brian J.; Kheraj, Vipul; Palekis, Vasilios; Ferekides, Christos; Scarpulla, Michael A.

    2015-06-14

    Laser processing of polycrystalline CdTe is a promising approach that could potentially increase module manufacturing throughput while reducing capital expenditure costs. For these benefits to be realized, the basic effects of laser irradiation on CdTe must be ascertained. In this study, we utilize surface photovoltage spectroscopy (SPS) to investigate the changes to the electronic properties of the surface of polycrystalline CdTe solar cell stacks induced by continuous-wave laser annealing. The experimental data explained within a model consisting of two space charge regions, one at the CdTe/air interface and one at the CdTe/CdS junction, are used to interpret our SPS results. The frequency dependence and phase spectra of the SPS signal are also discussed. To support the SPS findings, low-temperature spectrally-resolved photoluminescence and time-resolved photoluminescence were also measured. The data show that a modest laser treatment of 250 W/cm{sup 2} with a dwell time of 20 s is sufficient to reduce the effects of Fermi level pinning at the surface due to surface defects.

  20. Static atomic displacements in a CdTe epitaxial layer on a GaAs substrate

    SciTech Connect (OSTI)

    Horning, R.D.; Staudenmann, J.

    1987-05-25

    A (001)CdTe epitaxial layer on a (001)GaAs substrate was studied by x-ray diffraction between 10 and 360 K. The CdTe growth took place at 380 /sup 0/C in a vertical gas flow metalorganic chemical vapor deposition reactor. Lattice parameters and integrated intensities of both the substrate and the epitaxial layer using the (00l) and (hhh) Bragg reflections reveal three important features. Firstly, the GaAs substrate does not exhibit severe strain after deposition and it is as perfect as a bulk GaAs. Secondly, the CdTe unit cell distorts tetragonally with a/sub perpendicular/>a/sub parallel/ below 300 K. The decay of the (00l) reflection intensities as a function of the temperature yields a Debye temperature of 142 K, the same value as for bulk CdTe. Thirdly, a temperature-dependent isotropic static displacement of the Cd and the Te atoms is introduced to account for the anomalous behavior of the (hhh) intensities.

  1. An Experiment to Locate the Site of TeV Flaring in M87

    SciTech Connect (OSTI)

    Harris, D.E.; /Harvard-Smithsonian Ctr. Astrophys.; Massaro, F.; /Harvard-Smithsonian Ctr. Astrophys. /KIPAC, Menlo Park /SLAC; Cheung, C.C.; /Natl. Acad. Sci. /Naval Research Lab, Wash., D.C.; Horns, D.; Raue, M.; /Hamburg U.; Stawarz, L.; /JAXA, Sagamihara /Jagiellonian U., Astron. Observ.; Wagner, S.; /Heidelberg Observ.; Colin, P.; /Munich, Max Planck Inst.; Mazin, D.; /Barcelona, IFAE; Wagner, R.; /Munich, Max Planck Inst.; Beilicke, M.; /McDonnell Ctr. Space Sci.; LeBohec, S.; Hui, M.; /Utah U.; Mukherjee, R.; /Barnard Coll.

    2012-05-18

    We describe a Chandra X-ray target-of-opportunity project designed to isolate the site of TeV flaring in the radio galaxy M87. To date, we have triggered the Chandra observations only once (2010 April) and by the time of the first of our nine observations, the TeV flare had ended. However, we found that the X-ray intensity of the unresolved nucleus was at an elevated level for our first observation. Of the more than 60 Chandra observations we have made of the M87 jet covering nine years, the nucleus was measured at a comparably high level only three times. Two of these occasions can be associated with TeV flaring, and at the time of the third event, there were no TeV monitoring activities. From the rapidity of the intensity drop of the nucleus, we infer that the size of the emitting region is of order a few light days x the unknown beaming factor; comparable to the same sort of estimate for the TeV emitting region. We also find evidence of spectral evolution in the X-ray band which seems consistent with radiative losses affecting the non-thermal population of the emitting electrons within the unresolved nucleus.

  2. Intergalactic magnetic fields and gamma-ray observations of extreme TeV blazars

    SciTech Connect (OSTI)

    Arlen, Timothy C.; Vassilev, Vladimir V.; Weisgarber, Thomas; Wakely, Scott P.; Shafi, S. Yusef

    2014-11-20

    The intergalactic magnetic field (IGMF) in cosmic voids can be indirectly probed through its effect on electromagnetic cascades initiated by a source of teraelectronvolt (TeV) gamma-rays, such as active galactic nuclei (AGNs). AGNs that are sufficiently luminous at TeV energies, 'extreme TeV blazars', can produce detectable levels of secondary radiation from inverse Compton scattering of the electrons in the cascade, provided that the IGMF is not too large. We review recent work in the literature that utilizes this idea to derive constraints on the IGMF for three TeV-detected blazars, 1ES 0229+200, 1ES 1218+304, and RGB J0710+591, and we also investigate four other hard-spectrum TeV blazars in the same framework. Through a recently developed, detailed, three-dimensional particle-tracking Monte Carlo code, incorporating all major effects of QED and cosmological expansion, we research the effects of major uncertainties, such as the spectral properties of the source, uncertainty in the ultraviolet and far-infrared extragalactic background light, undersampled very high energy (energy ≥100 GeV) coverage, past history of gamma-ray emission, source versus observer geometry, and the jet AGN Doppler factor. The implications of these effects on the recently reported lower limits of the IGMF are thoroughly examined to conclude that the presently available data are compatible with a zero-IGMF hypothesis.

  3. Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2Te3

    SciTech Connect (OSTI)

    Siemons, W.

    2010-02-24

    Three-dimensional topological insulators are a new state of quantum matter with a bulk gap and odd number of relativistic Dirac fermions on the surface. By investigating the surface state of Bi{sub 2}Te{sub 3} with angle-resolved photoemission spectroscopy, we demonstrate that the surface state consists of a single nondegenerate Dirac cone. Furthermore, with appropriate hole doping, the Fermi level can be tuned to intersect only the surface states, indicating a full energy gap for the bulk states. Our results establish that Bi{sub 2}Te{sub 3} is a simple model system for the three-dimensional topological insulator with a single Dirac cone on the surface. The large bulk gap of Bi{sub 2}Te{sub 3} also points to promising potential for high-temperature spintronics applications.

  4. Systematic study of doping dependence on linear magnetoresistance in p-PbTe

    SciTech Connect (OSTI)

    Schneider, J. M.; Chitta, V. A.; Oliveira, N. F.; Peres, M. L. Castro, S. de; Soares, D. A. W.; Wiedmann, S.; Zeitler, U.; Abramof, E.; Rappl, P. H. O.; Mengui, U. A.

    2014-10-20

    We report on a large linear magnetoresistance effect observed in doped p-PbTe films. While undoped p-PbTe reveals a sublinear magnetoresistance, p-PbTe films doped with BaF{sub 2} exhibit a transition to a nearly perfect linear magnetoresistance behaviour that is persistent up to 30?T. The linear magnetoresistance slope ?R/?B is to a good approximation, independent of temperature. This is in agreement with the theory of Quantum Linear Magnetoresistance. We also performed magnetoresistance simulations using a classical model of linear magnetoresistance. We found that this model fails to explain the experimental data. A systematic study of the doping dependence reveals that the linear magnetoresistance response has a maximum for small BaF{sub 2} doping levels and diminishes rapidly for increasing doping levels. Exploiting the huge impact of doping on the linear magnetoresistance signal could lead to new classes of devices with giant magnetoresistance behavior.

  5. Ba{sub 2}TeO as an optoelectronic material: First-principles study

    SciTech Connect (OSTI)

    Sun, Jifeng; Shi, Hongliang; Du, Mao-Hua; Singh, David J.; Siegrist, Theo

    2015-05-21

    The band structure, optical, and defects properties of Ba{sub 2}TeO are systematically investigated using density functional theory with a view to understanding its potential as an optoelectronic or transparent conducting material. Ba{sub 2}TeO crystallizes with tetragonal structure (space group P4/nmm) and with a 2.93 eV optical bandgap [Besara et al., J. Solid State Chem. 222, 60 (2015)]. We find relatively modest band masses for both electrons and holes suggesting applications. Optical properties show infrared-red absorption when doped. This could potentially be useful for combining wavelength filtering and transparent conducting functions. Furthermore, our defect calculations show that Ba{sub 2}TeO is intrinsically p-type conducting under Ba-poor condition. However, the spontaneous formation of the donor defects may constrain the p-type transport properties and would need to be addressed to enable applications.

  6. Pair correlations in neutrinoless double {beta} decay candidate {sup 130}Te.

    SciTech Connect (OSTI)

    Bloxham, T.; Kay, B. P.; Schiffer, J. P.; Clark, J. A.; Deibel, C. M.; Freeman, S. J.; Freedman, S. J.; Howard, A. M.; McAllister, S. A.; Parker, P. D.; Sharp, D. K.; Thomas, J. S. (Physics); ( PSC-USR); (LBNL); (Michigan State Univ.); (Univ. of Manchester); (Yale Univ.)

    2010-08-16

    Pair correlations in the ground state of {sup 130}Te have been investigated using pair-transfer experiments to explore the validity of approximations in calculating the matrix element for neutrinoless double-{beta} decay. This nucleus is a candidate for the observation of such decay, and a good understanding of its structure is crucial for eventual calculations of the neutrino mass, should such a decay indeed be observed. For proton-pair adding, strong transitions to excited 0{sup +} states had been observed in the Te isotopes by Alford et al. [Nucl. Phys. A 323, 339 (1979)], indicating a breaking of the BCS approximation for protons in the ground state. We measured the neutron-pair removing (p,t) reaction on {sup 130}Te and found no indication of a corresponding splitting of the BCS nature of the ground state for neutrons.

  7. Pair correlations in the neutrinoless double-{beta} decay candidate {sup 130}Te

    SciTech Connect (OSTI)

    Bloxham, T.; Freedman, S. J. [Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kay, B. P.; Schiffer, J. P.; Clark, J. A. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Deibel, C. M. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Joint Institute for Nuclear Astrophysics, Michigan State University, East Lansing, Michigan 48825 (United States); Freeman, S. J.; Howard, A. M.; McAllister, S. A.; Sharp, D. K.; Thomas, J. S. [Schuster Laboratory, University of Manchester, Manchester, M13 9PL (United Kingdom); Parker, P. D. [A. W. Wright Nuclear Structure Laboratory, Yale University, New Haven, Connecticut 06520 (United States)

    2010-08-15

    Pair correlations in the ground state of {sup 130}Te have been investigated using pair-transfer experiments to explore the validity of approximations in calculating the matrix element for neutrinoless double-{beta} decay. This nucleus is a candidate for the observation of such decay, and a good understanding of its structure is crucial for eventual calculations of the neutrino mass, should such a decay indeed be observed. For proton-pair adding, strong transitions to excited 0{sup +} states had been observed in the Te isotopes by Alford et al. [Nucl. Phys. A 323, 339 (1979)], indicating a breaking of the BCS approximation for protons in the ground state. We measured the neutron-pair removing (p,t) reaction on {sup 130}Te and found no indication of a corresponding splitting of the BCS nature of the ground state for neutrons.

  8. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

    2015-09-01

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk.more » With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

  9. Simulation of Electric Field in Semi Insulating Au/CdTe/Au Detector under Flux

    SciTech Connect (OSTI)

    Franc, J.; James, R.; Grill, R.; Kubat, J.; Belas, E.; Hoschl, P.; Moravec, P.; Praus, P.

    2009-08-02

    We report our simulations on the profile of the electric field in semi insulating CdTe and CdZnTe with Au contacts under radiation flux. The type of the space charge and electric field distribution in the Au/CdTe/Au structure is at high fluxes result of a combined influence of charge formed due to band bending at the electrodes and from photo generated carriers, which are trapped at deep levels. Simultaneous solution of drift-diffusion and Poisson equations is used for the calculation. We show, that the space charge originating from trapped photo-carriers starts to dominate at fluxes 10{sup 15}-10{sup 16}cm{sup -2}s{sup -1}, when the influence of contacts starts to be negligible.

  10. Thermoelectric study of crossroads material MnTe via sulfur doping

    SciTech Connect (OSTI)

    Xie, Wenjie Populoh, Sascha; Sagarna, Leyre; Trottmann, Matthias; Ga??zka, Krzysztof; Xiao, Xingxing; Liu, Yufei; He, Jian; Weidenkaff, Anke

    2014-03-14

    Here, we report thermoelectric study of crossroads material MnTe via iso-electronic doping S on the Te-site. MnTe{sub 1-x}S{sub x} samples with nominal S content of x?=?0.00, 0.05, and 0.10 were prepared using a melt-quench method followed by pulverization and spark plasma sintering. The X-ray powder diffraction, scanning electron microscopy, and ZAF-corrected compositional analysis confirmed that S uniformly substitutes Te up to slightly over 2%. A higher content of S in the starting materials led to the formation of secondary phases. The thermoelectric properties of MnTe{sub 1-x}S{sub x} samples were characterized by means of Seebeck coefficient, electrical conductivity, and thermal conductivity measurements from 300?K to 773?K. Furthermore, Hall coefficient measurements and a single parabolic band model were used to help gain insights on the effects of S-doping on the scattering mechanism and the carrier effective mass. As expected, S doping not only introduced hole charge carriers but also created short-range defects that effectively scatter heat-carrying phonons at elevated temperatures. On the other hand, we found that S doping degraded the effective mass. As a result, the ZT of MnTe{sub 0.9}S{sub 0.1} was substantially enhanced over the pristine sample near 400?K, while the improvement of ZT became marginal at elevated temperatures. A ZT???0.65 at 773?K was obtained in all three samples.

  11. Synthesis, crystal and electronic structure, and physical properties of the new lanthanum copper telluride La{sub 3}Cu{sub 5}Te{sub 7}

    SciTech Connect (OSTI)

    Zelinska, Mariya; Assoud, Abdeljalil [Department of Chemistry, University of Waterloo, Waterloo, ON, Canada N2L 3G1 (Canada); Kleinke, Holger, E-mail: kleinke@uwaterloo.c [Department of Chemistry, University of Waterloo, Waterloo, ON, Canada N2L 3G1 (Canada)

    2011-03-15

    The new lanthanum copper telluride La{sub 3}Cu{sub 5-x}Te{sub 7} has been obtained by annealing the elements at 1073 K. Single-crystal X-ray diffraction studies revealed that the title compound crystallizes in a new structure type, space group Pnma (no. 62) with lattice dimensions of a=8.2326(3) A, b=25.9466(9) A, c=7.3402(3) A, V=1567.9(1) A{sup 3}, Z=4 for La{sub 3}Cu{sub 4.86(4)}Te{sub 7}. The structure of La{sub 3}Cu{sub 5-x}Te{sub 7} is remarkably complex. The Cu and Te atoms build up a three-dimensional covalent network. The coordination polyhedra include trigonal LaTe{sub 6} prisms, capped trigonal LaTe{sub 7} prisms, CuTe{sub 4} tetrahedra, and CuTe{sub 3} pyramids. All Cu sites exhibit deficiencies of various extents. Electrical property measurements on a sintered pellet of La{sub 3}Cu{sub 4.86}Te{sub 7} indicate that it is a p-type semiconductor in accordance with the electronic structure calculations. -- Graphical abstract: Oligomeric unit comprising interconnected CuTe{sub 3} pyramids and CuTe{sub 4} tetrahedra. Display Omitted Research highlights: {yields} La{sub 3}Cu{sub 5-x}Te{sub 7} adopts a new structure type. {yields} All Cu sites exhibit deficiencies of various extents. {yields} The coordination polyhedra include trigonal LaTe{sub 6} prisms, capped trigonal LaTe{sub 7} prisms, CuTe{sub 4} tetrahedra and CuTe{sub 3} pyramids. {yields} La{sub 3}Cu{sub 5-x}Te{sub 7} is a p-type semiconductor.

  12. Expanding the Repertoire of Chalcogenide Nanocrystal Networks: Ag2Se Gels

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Aerogels by Cation Exchange Reactions | Energy Frontier Research Centers Expanding the Repertoire of Chalcogenide Nanocrystal Networks: Ag2Se Gels and Aerogels by Cation Exchange Reactions Home Author: Q. Yao, I. U. Arachchige, S. L. Brock Year: 2009 Abstract: Cation exchange is shown to be a simple and efficient method to prepare nanostructured Ag2Se gels and aerogels from CdSe gel precursors. Treatment of CdSe wet gels with AgNO3yields, for the first time, Ag2Se gels, and these are

  13. Multiband Te p Based Superconductivity of Ta4Pd3Te16

    SciTech Connect (OSTI)

    Singh, David J.

    2014-10-06

    We recently discovered that Ta4Pd3Te16 is a superconductor that has been suggested to be an unconventional superconductor near magnetism. Here, we report electronic structure calculations showing that despite the layered crystal structure the material is an anisotropic three-dimensional (3D) metal. The Fermi surface contains prominent one-dimensional (1D) and two-dimensional (2D) features, including nested 1D sheets, a 2D cylindrical section, and a 3D sheet. Moreover, the electronic states that make up the Fermi surface are mostly derived from Te p states with small Ta d and Pd d contributions. This places the compound far from magnetic instabilities. The results are discussed in terms of multiband superconductivity.

  14. Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O

    SciTech Connect (OSTI)

    Felici, Marco; Polimeni, Antonio; Capizzi, Mario; Nabetani, Y.; Okuno, T.; Aoki, K.; Kato, T.; Matsumoto, T.; Hirai, T.

    2006-03-06

    We investigated the optical properties of ZnTe:O/GaAs before and after atomic hydrogen irradiation. Oxygen incorporation gives rise to energy levels associated with single O atoms, O-O pairs, and O clusters, and to a blueshift of the energy gap of the material with respect to that of pure ZnTe/GaAs. All of these effects disappear progressively after irradiation with H, which also leads to an increase in the tensile strain of the epilayer. These observations provide experimental evidence of H-induced passivation of an isoelectronic impurity in II-VI alloys.

  15. Emission switching in carbon dots coated CdTe quantum dots driving by pH

    Office of Scientific and Technical Information (OSTI)

    dependent hetero-interactions (Journal Article) | SciTech Connect Emission switching in carbon dots coated CdTe quantum dots driving by pH dependent hetero-interactions Citation Details In-Document Search Title: Emission switching in carbon dots coated CdTe quantum dots driving by pH dependent hetero-interactions Due to the different emission mechanism between fluorescent carbon dots and semiconductor quantum dots (QDs), it is of interest to explore the potential emission in

  16. Energy Sources for Yotta-TeV Iceberg Showers (Conference) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Energy Sources for Yotta-TeV Iceberg Showers Citation Details In-Document Search Title: Energy Sources for Yotta-TeV Iceberg Showers In late February of 2002, warming climate along the Antarctic Peninsula triggered a macroscopic particle acceleration event that smashed a 350 Gkg floating ice shelf, called the Larsen B. The particle shower released by the acceleration involved on the order of >10^6 iceberg particles accelerated to an aggregate total kinetic energy of ~10^17 J (100 Mt TNT

  17. Higgs production and decay from TeV scale black holes at the LHC (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Higgs production and decay from TeV scale black holes at the LHC Citation Details In-Document Search Title: Higgs production and decay from TeV scale black holes at the LHC We perform a detailed study of the Higgs production and decay, when Higgs is emitted from the black holes produced in proton-proton collisions at the Large Hadron Collider. We show that black hole production can significantly enhance the signal for the Higgs search at the LHC. We evaluate

  18. Preliminary design for a 20 TeV Collider in a deep tunnel at Fermilab

    SciTech Connect (OSTI)

    Not Available

    1985-01-12

    The Reference Design Study for a 20 TeV Collider demonstrated the technical and cost feasibility of a 20 TeV superconducting collider facility. Based on magnets of 3T, 5T, and 6.5T the Main Ring of the Collider would have a circumference of 164 km, 113 km, or 90 km. There would be six collision regions, of which four would be developed intially. The 5T and 6.5T rings would have twelve major refrigeration stations, while the 3T design would have 24 major refrigeration stations.

  19. Indexing and TEM Sample Preparation of Isolated CdTe/CdS Nano-Islands.

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Conference: Indexing and TEM Sample Preparation of Isolated CdTe/CdS Nano-Islands. Citation Details In-Document Search Title: Indexing and TEM Sample Preparation of Isolated CdTe/CdS Nano-Islands. Abstract not provided. Authors: Aguirre, Brandon Adrian ; Cruz-Campa, Jose Luis ; Jungjohann, Katherine Leigh ; Pete, Douglas V. ; Zubia, David Publication Date: 2014-03-01 OSTI Identifier: 1140918 Report Number(s): SAND2014-2312C 505756 DOE Contract Number:

  20. Intrinsic Surface Passivation of CdTe (Journal Article) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Intrinsic Surface Passivation of CdTe Citation Details In-Document Search Title: Intrinsic Surface Passivation of CdTe Authors: Reese, Matthew O. ; Perkins, Craig L. ; Burst, James M. ; Farrell, Stuart ; Barnes, Teresa M. ; Johnston, Steve W. ; Kuciauskas, Darius ; Gessert, Timothy A. ; Metzger, Wyatt K. Publication Date: 2015-10-21 OSTI Identifier: 1225933 Report Number(s): NREL/JA-5K00-64478 Journal ID: ISSN 0021-8979 DOE Contract Number: AC36-08GO28308 Resource Type: Journal Article Resource

  1. Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods

    Office of Scientific and Technical Information (OSTI)

    and nanowires (Journal Article) | SciTech Connect Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires Citation Details In-Document Search This content will become publicly available on November 6, 2016 Title: Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires In this study, the rational design and synthesis of narrow-gap colloidal semiconductor nanocrystals (NCs) is an important step toward the next generation of

  2. Renaissance of the ~1 TeV Fixed-Target Program

    SciTech Connect (OSTI)

    Adams, T.; Appel, Jeffrey A.; Arms, Kregg Elliott; Balantekin, A.B.; Conrad, Janet Marie; Cooper, Peter S.; Djurcic, Zelimir; Dunwoodie, William M.; Engelfried, Jurgen; Fisher, Peter H.; Gottschalk, E.; /Fermilab /Northwestern U.

    2009-05-01

    This document describes the physics potential of a new fixed-target program based on a {approx} TeV proton source. Two proton sources are potentially available in the future: the existing Tevatron at Fermilab, which can provide 800 GeV protons for fixed-target physics, and a possible upgrade to the SPS at CERN, called SPS+, which would produce 1 TeV protons on target. In this paper we use an example Tevatron fixed-target program to illustrate the high discovery potential possible in the charm and neutrino sectors. We highlight examples which are either unique to the program or difficult to accomplish at other venues.

  3. Renaissance of the ~ 1-TeV Fixed-Target Program

    SciTech Connect (OSTI)

    Adams, T.; Appel, J.A.; Arms, K.E.; Balantekin, A.B.; Conrad, J.M.; Cooper, P.S.; Djurcic, Z.; Dunwoodie, W.; Engelfried, J.; Fisher, P.H.; Gottschalk, Erik Edward; de Gouvea, A.; Heller, K.; Ignarra, C.M.; Karagiorgi, G.; Kwan, S.; Loinaz, W.A.; Meadows, B.; Moore, R.; Morfin, J.G.; Naples, D.; /Pittsburgh U. /St. Mary's Coll., Minnesota /New Mexico State U. /Michigan U. /Wayne State U. /South Carolina U. /Florida U. /Carnegie Mellon U. /Cincinnati U. /Columbia U. /Columbia U. /Northwestern U. /Yale U. /Fermilab /Argonne /Northwestern U. /APC, Paris

    2011-12-02

    This document describes the physics potential of a new fixed-target program based on a {approx}1 TeV proton source. Two proton sources are potentially available in the future: the existing Tevatron at Fermilab, which can provide 800 GeV protons for fixed-target physics, and a possible upgrade to the SPS at CERN, called SPS+, which would produce 1 TeV protons on target. In this paper we use an example Tevatron fixed-target program to illustrate the high discovery potential possible in the charm and neutrino sectors. We highlight examples which are either unique to the program or difficult to accomplish at other venues.

  4. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Terahertz-Induced Response of GeSbTe Phase-Change Materials Citation Details In-Document Search Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information resources in energy science and

  5. Charged-particle distributions in s=13 TeV pp interactions measured with

    Office of Scientific and Technical Information (OSTI)

    the ATLAS detector at the LHC (Journal Article) | SciTech Connect Charged-particle distributions in s = 13 TeV pp interactions measured with the ATLAS detector at the LHC Citation Details In-Document Search Title: Charged-particle distributions in s = 13 TeV pp interactions measured with the ATLAS detector at the LHC Publication Date: 2016-07-01 OSTI Identifier: 1250307 Type: Published Article Journal Name: Physics Letters. Section B Additional Journal Information: Journal Volume: 758;

  6. Aqueous Synthesis of Zinc Blende CdTe/CdS Magic-Core/Thick-Shell

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Tetrahedral Shaped Nanocrystals with Emission Tunable to Near-Infrared Aqueous Synthesis of Zinc Blende CdTe/CdS Magic-Core/Thick-Shell Tetrahedral Shaped Nanocrystals with Emission Tunable to Near-Infrared Authors: Deng, Z., Schulz, O., Lin, S., Ding, B., Liu, X., Wei, X., Ros, R., Liu, Y., Yan, H., and Francis, M. Title: Aqueous Synthesis of Zinc Blende CdTe/CdS Magic-Core/Thick-Shell Tetrahedral Shaped Nanocrystals with Emission Tunable to Near-Infrared Source: Journal of the American

  7. .sup.123m Te-Labeled biochemicals and method of preparation

    DOE Patents [OSTI]

    Knapp, Jr., Furn F.

    1980-01-01

    A novel class of .sup.123m Te-labeled steroids and amino acids is provided by the method of reacting a .sup.123m Te symmetric diorgano ditelluride with a hydride reducing agent and a source of alkali metal ions to form an alkali metal organo telluride. The alkali metal organo telluride is reacted with a primary halogenated steroidal side chain, amino acid, or amino acid precursor such as hydantoin. The novel compounds are useful as biological tracers and as organal imaging agents.

  8. High efficiency thin film CdTe and a-Si based solar cells

    SciTech Connect (OSTI)

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2000-01-04

    This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and {approximately}9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features and studied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdS{sub x}Te{sub 1{minus}x} films at 10 K and 300 K; collaborated with the National CdTe PV Team on (1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, (2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and (3) preparation of ZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdS{sub x}Te{sub 1{minus}x} alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, and triple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction top cell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure ({approximately}2 {times} 10{sup {minus}5} torr) was beneficial for growing high-quality films from ITO targets.

  9. Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers

    SciTech Connect (OSTI)

    Niraula, M.; Yasuda, K.; Wajima, Y.; Yamashita, H.; Tsukamoto, Y.; Suzuki, Y.; Matsumoto, M.; Takai, N.; Tsukamoto, Y.; Agata, Y.

    2013-10-28

    Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors, fabricated by growing p-and n-type CdTe epilayers on (211) n{sup +}-Si substrates using metalorganic vapor-phase epitaxy (MOVPE), were studied by analyzing current-voltage characteristics measured at various temperatures. The diode fabricated shows good rectification properties, however, both forward and reverse biased currents deviate from their ideal behavior. The forward current exhibits typical feature of multi-step tunneling at lower biases; however, becomes space charge limited type when the bias is increased. On the other hand, the reverse current exhibits thermally activated tunneling-type current. It was found that trapping centers at the p-CdTe/n-CdTe junction, which were formed due to the growth induced defects, determine the currents of this diode, and hence limit the performance of the nuclear radiation detectors developed.

  10. Elastic and surface energies: Two key parameters for CdSe quantum dot formation

    SciTech Connect (OSTI)

    Robin, Ivan-Christophe; Andre, Regis; Bougerol, Catherine; Aichele, Thomas; Tatarenko, Serge

    2006-06-05

    The two-dimensional-three-dimensional transition of a strained CdSe layer on (001) ZnSe induced by the use of amorphous selenium is studied. To precisely control the thickness of the CdSe layer, atomic layer epitaxy growth mode is used. Atomic force microscopy and reflection high-energy electron diffraction measurements reveal the formation of CdSe islands when 3 ML (monolayers) of CdSe, corresponding to the critical thickness, are deposited. When only 2.5 ML of CdSe are deposited another relaxation mechanism is observed, leading to the appearance of strong undulations on the surface. For a 3 ML thick CdSe layer, transmission electron microscopy images indicate that the formation of the islands occurs only after the amorphous selenium desorption.

  11. Method of synthesizing and growing copper-indium-diselenide (CuInSe.sub.2) crystals

    DOE Patents [OSTI]

    Ciszek, Theodore F.

    1987-01-01

    A process for preparing CuInSe.sub.2 crystals includes melting a sufficient quantity of B.sub.2 O.sub.3 along with stoichiometric quantities of Cu, In, and Se in a crucible in a high pressure atmosphere of inert gas to encapsulate the CuInSe.sub.2 melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2 percent over the stoichiometric quantity is preferred to make up for small amounts of Se lost in the process. The crystal is grown by inserting a seed crystal through the B.sub.2 O.sub.3 encapsulate into contact with the CuInSe.sub.2 melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.

  12. Method of synthesizing and growing copper-indium-diselenide (CuInSe/sub 2/) crystals

    DOE Patents [OSTI]

    Ciszek, T.F.

    1984-11-29

    A process for preparing CuInSe/sub 2/ crystals includes melting a sufficient quantity of B/sub 2/O/sub 2/ along with stochiometric quantities of Cu, In, and Se in a crucible in a high-pressure atmosphere of inert gas to encapsulate the CuInSe/sub 2/ melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2% over the stochiometric quantity is preferred to make up for small amounts of Se lost in the process. The melt can then be cooled slowly to form the crystal as direct solidification, or the crystal can be grown by inserting a seed crystal through the B/sub 2/O/sub 3/ encapsulate into contact with the CuInSe/sub 2/ melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.

  13. Study of W boson production in pPb collisions at sNN=5.02 TeV...

    Office of Scientific and Technical Information (OSTI)

    Study of W boson production in pPb collisions at sNN5.02 TeV Citation Details In-Document Search Title: Study of W boson production in pPb collisions at sNN5.02 TeV Publication...

  14. Cadmium sulfate and CdTe-quantum dots alter DNA repair in zebrafish (Danio rerio) liver cells

    SciTech Connect (OSTI)

    Tang, Song; Cai, Qingsong; Chibli, Hicham; Allagadda, Vinay; Nadeau, Jay L.; Mayer, Gregory D.

    2013-10-15

    Increasing use of quantum dots (QDs) makes it necessary to evaluate their toxicological impacts on aquatic organisms, since their contamination of surface water is inevitable. This study compares the genotoxic effects of ionic Cd versus CdTe nanocrystals in zebrafish hepatocytes. After 24 h of CdSO{sub 4} or CdTe QD exposure, zebrafish liver (ZFL) cells showed a decreased number of viable cells, an accumulation of Cd, an increased formation of reactive oxygen species (ROS), and an induction of DNA strand breaks. Measured levels of stress defense and DNA repair genes were elevated in both cases. However, removal of bulky DNA adducts by nucleotide excision repair (NER) was inhibited with CdSO{sub 4} but not with CdTe QDs. The adverse effects caused by acute exposure of CdTe QDs might be mediated through differing mechanisms than those resulting from ionic cadmium toxicity, and studying the effects of metallic components may be not enough to explain QD toxicities in aquatic organisms. - Highlights: Both CdSO{sub 4} and CdTe QDs lead to cell death and Cd accumulation. Both CdSO{sub 4} and CdTe QDs induce cellular ROS generation and DNA strand breaks. Both CdSO{sub 4} and CdTe QDs induce the expressions of stress defense and DNA repair genes. NER repair capacity was inhibited with CdSO{sub 4} but not with CdTe QDs.

  15. Sonochemical and hydrothermal synthesis of PbTe nanostructures with the aid of a novel capping agent

    SciTech Connect (OSTI)

    Fard-Fini, Shahla Ahmadian; Salavati-Niasari, Masoud; Mohandes, Fatemeh

    2013-10-15

    Graphical abstract: - Highlights: • PbTe nanostructures were prepared with the aid of Schiff-base compound. • Sonochemical and hydrothermal methods were employed to fabricate PbTe nanostrucrues. • The effect of preparation parameters on the morphology of PbTe was investigated. - Abstract: In this work, a new Schiff-base compound derived from 1,8-diamino-3,6-dioxaoctane and 2-hydroxy-1-naphthaldehyde marked as (2-HyNa)-(DaDo) was synthesized, characterized, and then used as capping agent for the preparation of PbTe nanostructures. To fabricate PbTe nanostructures, two different synthesis methods; hydrothermal and sonochemical routes, were applied. To further investigate, the effect of preparation parameters like reaction time and temperature in hydrothermal synthesis and sonication time in the presence of ultrasound irradiation on the morphology and purity of the final products was tested. The products were analyzed with the aid of SEM, TEM, XRD, FT-IR, and EDS. Based on the obtained results, it was found that pure cubic phased PbTe nanostructures have been obtained by hydrothermal and sonochemical approaches. Besides, SEM images showed that cubic-like and rod-like PbTe nanostructures have been formed by hydrothermal and sonochemical methods, respectively. Sonochemical synthesis of PbTe nanostructures was favorable, because the synthesis time of sonochemical method was shorter than that of hydrothermal method.

  16. Electrical properties of In{sub 2}Se{sub 3} single crystals and photosensitivity of Al/In{sub 2}Se{sub 3} Schottky barriers

    SciTech Connect (OSTI)

    Bodnar, I. V.; Ilchuk, G. A.; Petrus', R. Yu.; Rud', V. Yu.; Rud', Yu. V.; Serginov, M.

    2009-09-15

    In{sub 2}Se{sub 3} single crystals {approx}40 mm long and 14 mm in diameter were grown by the Bridgman method. The composition of grown single crystals and their crystal structure were determined. The conductivity ({sigma}) and Hall constant (R) of grown single crystals were measured and the first Schottky barriers Al/n-In{sub 2}Se{sub 3} were fabricated. Rectification and photovoltaic effect were detected in the new structures. Based on the study of the photosensitivity spectra of Al/n-In{sub 2}Se{sub 3} structures, the nature of the interband transitions and band gap of In{sub 2}Se{sub 3} crystals were determined. It was concluded that the new structures can be applied to develop broadband photoconverters of optical radiation.

  17. Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Guo, Shaojun; Andrew F. Fidler; He, Kai; Su, Dong; Chen, Gen; Lin, Qianglu; Pietryga, Jeffrey M.; Klimov, Victor I.

    2015-11-06

    In this study, the rational design and synthesis of narrow-gap colloidal semiconductor nanocrystals (NCs) is an important step toward the next generation of solution-processable photovoltaics, photodetectors, and thermoelectric devices. SnTe NCs are particularly attractive as a Pb-free alternative to NCs of narrow-gap lead chalcogenides. Previous synthetic efforts on SnTe NCs have focused on spherical nanoparticles. Here we report new strategies for synthesis of SnTe NCs with shapes tunable from highly monodisperse nanocubes, to nanorods (NRs) with variable aspect ratios, and finally to long, straight nanowires (NWs). Reaction at high temperature quickly forms thermodynamically favored nanocubes, but low temperatures lead tomore » elongated particles. Transmission electron microscopy studies of reaction products at various stages of the synthesis reveal that the growth and shape-focusing of monodisperse SnTe nanocubes likely involves interparticle ripening, while directional growth of NRs and NWs may be initiated by particle dimerization via oriented attachment.« less

  18. Relic neutralino surface at a 100 TeV collider

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bramante, Joseph; Fox, Patrick J.; Martin, Adam; Ostdiek, Bryan; Plehn, Tilman; Schell, Torben; Takeuchi, Michihisa

    2015-03-11

    We map the parameter space for minimal supersymmetric Standard Model neutralino dark matter which freezes out to the observed relic abundance, in the limit that all superpartners except the neutralinos and charginos are decoupled. In this space of relic neutralinos, we show the dominant dark matter annihilation modes, the mass splittings among the electroweakinos, direct detection rates, and collider cross sections. The mass difference between the dark matter and the next-to-lightest neutral and charged states is typically much less than electroweak gauge boson masses. With these small mass differences, the relic neutralino surface is accessible to a future 100 TeVmore » hadron collider, which can discover interneutralino mass splittings down to 1 GeV and thermal relic dark matter neutralino masses up to 1.5 TeV with a few inverse attobarns of luminosity. This coverage is a direct consequence of the increased collider energy: in the Standard Model events with missing transverse momentum in the TeV range have mostly hard electroweak radiation, distinct from the soft radiation shed in compressed electroweakino decays. As a result, we exploit this kinematic feature in final states including photons and leptons, tailored to the 100 TeV collider environment.« less

  19. Nuclear structure relevant to neutrinoless double beta decay candidate {sup 130}Te and other recent results

    SciTech Connect (OSTI)

    Kay, B. P. [Physics Division, Argonne National Laboratory, Illinois 60439 (United States)

    2013-12-30

    We have undertaken a series of single-nucleon and pair transfer reaction measurements to help constrain calculations of the nuclear matrix elements for neutrinoless double beta decay. In this talk, a short overview of measurements relevant to the {sup 130}Te?{sup 130}Xe system is given. Brief mention is made of other recent and forthcoming results.

  20. Higgs Coupling Measurements at a 1 TeV Linear Collider

    SciTech Connect (OSTI)

    Barklow, T

    2003-12-18

    Methods for extracting Higgs boson signals at a 1 TeV center-of-mass energy e{sup +}e{sup -} linear collider are described. In addition, estimates are given for the accuracy with which branching fractions can be measured for Higgs boson decays to b{bar b} WW, gg, and {gamma}{gamma}.

  1. Nanowire CdS-CdTe solar cells with molybdenum oxide as contact

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dang, Hongmei; Singh, Vijay P.

    2015-10-06

    Using a 10 nm thick molybdenum oxide (MoO3-x) layer as a transparent and low barrier contact to p-CdTe, we demonstrate nanowire CdS-CdTe solar cells with a power conversion efficiency of 11% under front side illumination. Annealing the as-deposited MoO3 film in N2 resulted in a reduction of the cell’s series resistance, from 9.97 Ω/cm2 to 7.69 Ω/cm2, and increase in efficiency from 9.9% to 11%. Under illumination from the back, the MoO3-x/Au side, the nanowire solar cells yielded Jsc of 21 mA/cm2 and efficiency of 8.67%. Our results demonstrate use of a thin layer transition metal oxide as a potentialmore » way for a transparent back contact to nanowire CdS-CdTe solar cells. As a result, this work has implications toward enabling a novel superstrate structure nanowire CdS-CdTe solar cell on Al foil substrate by a low cost roll-to roll fabrication process.« less

  2. Relic neutralino surface at a 100 TeV collider

    SciTech Connect (OSTI)

    Bramante, Joseph; Fox, Patrick J.; Martin, Adam; Ostdiek, Bryan; Plehn, Tilman; Schell, Torben; Takeuchi, Michihisa

    2015-03-11

    We map the parameter space for minimal supersymmetric Standard Model neutralino dark matter which freezes out to the observed relic abundance, in the limit that all superpartners except the neutralinos and charginos are decoupled. In this space of relic neutralinos, we show the dominant dark matter annihilation modes, the mass splittings among the electroweakinos, direct detection rates, and collider cross sections. The mass difference between the dark matter and the next-to-lightest neutral and charged states is typically much less than electroweak gauge boson masses. With these small mass differences, the relic neutralino surface is accessible to a future 100 TeV hadron collider, which can discover interneutralino mass splittings down to 1 GeV and thermal relic dark matter neutralino masses up to 1.5 TeV with a few inverse attobarns of luminosity. This coverage is a direct consequence of the increased collider energy: in the Standard Model events with missing transverse momentum in the TeV range have mostly hard electroweak radiation, distinct from the soft radiation shed in compressed electroweakino decays. As a result, we exploit this kinematic feature in final states including photons and leptons, tailored to the 100 TeV collider environment.

  3. Nanowire CdS-CdTe solar cells with molybdenum oxide as contact

    SciTech Connect (OSTI)

    Dang, Hongmei; Singh, Vijay P.

    2015-10-06

    Using a 10 nm thick molybdenum oxide (MoO3-x) layer as a transparent and low barrier contact to p-CdTe, we demonstrate nanowire CdS-CdTe solar cells with a power conversion efficiency of 11% under front side illumination. Annealing the as-deposited MoO3 film in N2 resulted in a reduction of the cell’s series resistance, from 9.97 Ω/cm2 to 7.69 Ω/cm2, and increase in efficiency from 9.9% to 11%. Under illumination from the back, the MoO3-x/Au side, the nanowire solar cells yielded Jsc of 21 mA/cm2 and efficiency of 8.67%. Our results demonstrate use of a thin layer transition metal oxide as a potential way for a transparent back contact to nanowire CdS-CdTe solar cells. As a result, this work has implications toward enabling a novel superstrate structure nanowire CdS-CdTe solar cell on Al foil substrate by a low cost roll-to roll fabrication process.

  4. Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices: Preprint

    SciTech Connect (OSTI)

    Gessert, T. A.; Dhere, R. G.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Bergeson, J. D.

    2011-07-01

    We discuss typical and alternative procedures to analyze time-resolved photoluminescence (TRPL) measurements of minority carrier lifetime (MCL) with the hope of enhancing our understanding of how this technique may be used to better analyze CdTe photovoltaic (PV) device functionality. Historically, TRPL measurements of the fast recombination rate (t1) have provided insightful correlation with broad device functionality. However, we have more recently found that t1 does not correlate as well with smaller changes in device performance, nor does it correlate well with performance differences observed between superstrate and substrate CdTe PV devices. This study presents TRPL data for both superstrate and substrate CdTe devices where both t1 and the slower TRPL decay (t2) are analyzed. The study shows that changes in performance expected from small changes in device processing may correlate better with t2. Numerical modeling further suggests that, for devices that are expected to have similar drift field in the depletion region, effects of changes in bulk MCL and interface recombination should be more pronounced in t2. Although this technique may provide future guidance to improving CdS/CdTe device performance, it is often difficult to extract statistically precise values for t2, and therefore t2 data may demonstrate significant scatter when correlated with performance parameters.

  5. Project Reports for Te-Moak Tribe of Western Shoshone: Battle Mountain Colony- 2012 Project

    Broader source: Energy.gov [DOE]

    The Feasibility Study for the Battle Mountain Renewable Energy Park project ("Feasibility Study") will assess the feasibility, benefits, and impacts of a 5-megawatt (MW) solar photovoltaic (PV) generating system (the "Solar Project" or "Energy Park") on the Te-Moak Tribe of Western Shoshone Indians of Nevada Battle Mountain Colony in Battle Mountain, Nevada.

  6. ORISE "AK RlDGE lNSTlT"TE FOR SCIENCE AND EDUCATION

    Office of Legacy Management (LM)

    ti,;;; il.,. (' . d ORISE "AK RlDGE lNSTlT"TE FOR SCIENCE AND EDUCATION August 1,200l Robert Atkin U.S. Department of Energy Oak Ridge Operations Office P.O. Box 2001 Oak Ridge, ...

  7. Te-Moak Tribe of Western Shoshone: Battle Mountain Colony- 2012 Project

    Broader source: Energy.gov [DOE]

    The Feasibility Study for the Battle Mountain Renewable Energy Park project ("Feasibility Study") will assess the feasibility, benefits, and impacts of a 5-megawatt (MW) solar photovoltaic (PV) generating system (the "Solar Project" or "Energy Park") on the Te-Moak Tribe of Western Shoshone Indians of Nevada Battle Mountain Colony in Battle Mountain, Nevada.

  8. In-situ crystallization of GeTe\\GaSb phase change memory stacked films

    SciTech Connect (OSTI)

    Velea, A.; Borca, C. N.; Grolimund, D.; Socol, G.; Galca, A. C.; Popescu, M.; Bokhoven, J. A. van

    2014-12-21

    Single and double layer phase change memory structures based on GeTe and GaSb thin films were deposited by pulsed laser deposition (PLD). Their crystallization behavior was studied using in-situ synchrotron techniques. Electrical resistance vs. temperature investigations, using the four points probe method, showed transition temperatures of 138 °C and 198 °C for GeTe and GaSb single films, respectively. It was found that after GeTe crystallization in the stacked films, Ga atoms from the GaSb layer diffused in the vacancies of the GeTe crystalline structure. Therefore, the crystallization temperature of the Sb-rich GaSb layer is decreased by more than 30 °C. Furthermore, at 210 °C, the antimony excess from GaSb films crystallizes as a secondary phase. At higher annealing temperatures, the crystalline Sb phase increased on the expense of GaSb crystalline phase which was reduced. Extended X-ray absorption fine structure (EXAFS) measurements at the Ga and Ge K-edges revealed changes in their local atomic environments as a function of the annealing temperature. Simulations unveil a tetrahedral configuration in the amorphous state and octahedral configuration in the crystalline state for Ge atoms, while Ga is four-fold coordinated in both as-deposited and annealed samples.

  9. Investigation of deep level defects in CdTe thin films

    SciTech Connect (OSTI)

    Shankar, H.; Castaldini, A.; Dauksta, E.; Medvid, A.; Cavallini, A.

    2014-02-21

    In the past few years, a large body of work has been dedicated to CdTe thin film semiconductors, as the electronic and optical properties of CdTe nanostructures make them desirable for photovoltaic applications. The performance of semiconductor devices is greatly influenced by the deep levels. Knowledge of parameters of deep levels present in as-grown materials and the identification of their origin is the key factor in the development of photovoltaic device performance. Photo Induced Current Transient Spectroscopy technique (PICTS) has proven to be a very powerful method for the study of deep levels enabling us to identify the type of traps, their activation energy and apparent capture cross section. In the present work, we report the effect of growth parameters and LASER irradiation intensity on the photo-electric and transport properties of CdTe thin films prepared by Close-Space Sublimation method using SiC electrical heating element. CdTe thin films were grown at three different source temperatures (630, 650 and 700 C). The grown films were irradiated with Nd:YAG LASER and characterized by Photo-Induced Current Transient Spectroscopy, Photocurrent measurementand Current Voltage measurements. The defect levels are found to be significantly influenced by the growth temperature.

  10. Computational discovery of ferromagnetic semiconducting single-layer CrSnTe3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhuang, Houlong L.; Xie, Yu; Kent, P. R. C.; Ganesh, P.

    2015-07-06

    Despite many single-layer materials being reported in the past decade, few of them exhibit magnetism. Here we perform first-principles calculations using accurate hybrid density functional methods (HSE06) to predict that single-layer CrSnTe3 (CST) is a ferromagnetic semiconductor, with band gaps of 0.9 and 1.2 eV for the majority and minority spin channels, respectively. We determine the Curie temperature as 170 K, significantly higher than that of single-layer CrSiTe3 (90K) and CrGeTe3 (130 K). This is due to the enhanced ionicity of the Sn-Te bond, which in turn increases the superexchange coupling between the magnetic Cr atoms. We further explore themore » mechanical and dynamical stability and strain response of this single-layer material for possible epitaxial growth. Lastly, our study provides an intuitive approach to understand and design novel single-layer magnetic semiconductors for a wide range of spintronics and energy applications.« less

  11. Pulsed laser deposition of Mn doped CdSe quantum dots for improved solar cell performance

    SciTech Connect (OSTI)

    Dai, Qilin; Wang, Wenyong E-mail: jtang2@uwyo.edu; Tang, Jinke E-mail: jtang2@uwyo.edu; Sabio, Erwin M.

    2014-05-05

    In this work, we demonstrate (1) a facile method to prepare Mn doped CdSe quantum dots (QDs) on Zn{sub 2}SnO{sub 4} photoanodes by pulsed laser deposition and (2) improved device performance of quantum dot sensitized solar cells of the Mn doped QDs (CdSe:Mn) compared to the undoped QDs (CdSe). The band diagram of photoanode Zn{sub 2}SnO{sub 4} and sensitizer CdSe:Mn QD is proposed based on the incident-photon-to-electron conversion efficiency (IPCE) data. Mn-modified band structure leads to absorption at longer wavelengths than the undoped CdSe QDs, which is due to the exchange splitting of the CdSe:Mn conduction band by the Mn dopant. Three-fold increase in the IPCE efficiency has also been observed for the Mn doped samples.

  12. Measurements of the t-tbar production cross section in lepton+jets final states in pp collisions at 8TeV and ratio of 8 to 7TeV cross sections

    Office of Scientific and Technical Information (OSTI)

    2.09024v1 [hep-ex] 29 Feb 2016 EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH (CERN) CERN-EP/2016-016 2016/03/01 CMS-TOP-12-006 Measurements of the tt production cross section in lepton+jets final states in pp collisions at 8 TeV and ratio of 8 to 7 TeV cross sections The CMS Collaboration* Abstract A measurement of the top quark pair production (tt) cross section in proton-proton collisions at the centre-of-mass energy of 8 TeV is presented using data collected with the CMS detector at the LHC,

  13. Impact of annealing on the chemical structure and morphology of the thin-film CdTe/ZnO interface

    SciTech Connect (OSTI)

    Horsley, K. Hanks, D. A.; Weir, M. G.; Beal, R. J.; Wilks, R. G.; Blum, M.; Hming, M.; Hofmann, T.; Weinhardt, L.; and others

    2014-07-14

    To enable an understanding and optimization of the optoelectronic behavior of CdTe-ZnO nanocomposites, the morphological and chemical properties of annealed CdTe/ZnO interface structures were studied. For that purpose, CdTe layers of varying thickness (424?nm) were sputter-deposited on 100?nm-thick ZnO films on surface-oxidized Si(100) substrates. The morphological and chemical effects of annealing at 525?C were investigated using X-ray Photoelectron Spectroscopy (XPS), X-ray-excited Auger electron spectroscopy, energy dispersive X-ray spectroscopy, scanning electron microscopy, and atomic force microscopy. We find a decrease of the Cd and Te surface concentration after annealing, parallel to an increase in Zn and O signals. While the as-deposited film surfaces show small grains (100?nm diameter) of CdTe on the ZnO surface, annealing induces a significant growth of these grains and separation into islands (with diameters as large as 1??m). The compositional change at the surface is more pronounced for Cd than for Te, as evidenced using component peak fitting of the Cd and Te 3d XPS peaks. The modified Auger parameters of Cd and Te are also calculated to further elucidate the local chemical environment before and after annealing. Together, these results suggest the formation of tellurium and cadmium oxide species at the CdTe/ZnO interface upon annealing, which can create a barrier for charge carrier transport, and might allow for a deliberate modification of interface properties with suitably chosen thermal treatment parameters.

  14. Effects of chemo-mechanical polishing on CdZnTe X-ray and gamma-ray

    Office of Scientific and Technical Information (OSTI)

    detectors (Journal Article) | SciTech Connect Effects of chemo-mechanical polishing on CdZnTe X-ray and gamma-ray detectors Citation Details In-Document Search This content will become publicly available on June 23, 2016 Title: Effects of chemo-mechanical polishing on CdZnTe X-ray and gamma-ray detectors Here, mechanically polishing cadmium zinc telluride (CdZnTe) wafers for x-ray and gamma-ray detectors often is inadequate in removing surface defects caused by cutting them from the ingots.

  15. Simulation, Modeling, and Crystal Growth of Cd0.9Zn0.1Te for Nuclear

    Office of Scientific and Technical Information (OSTI)

    Spectrometers (Journal Article) | SciTech Connect Simulation, Modeling, and Crystal Growth of Cd0.9Zn0.1Te for Nuclear Spectrometers Citation Details In-Document Search Title: Simulation, Modeling, and Crystal Growth of Cd0.9Zn0.1Te for Nuclear Spectrometers High-quality, large (10 cm long and 2.5 cm diameter), nuclear spectrometer grade Cd{sub 0.9}Zn{sub 0.1}Te (CZT) single crystals have been grown by a controlled vertical Bridgman technique using in-house zone refined precursor materials

  16. Search for contact interactions in dimuon events from pp collisions at ?s=7 TeV with the ATLAS detector

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Aad, G.; Abbott, B.; Abdallah, J.; Abdelalim, A. A.; Abdesselam, A.; Abdinov, O.; Abi, B.; Abolins, M.; Abramowicz, H.; Abreu, H.; et al

    2011-07-01

    A search for contact interactions has been performed using dimuon events recorded with the ATLAS detector in proton-proton collisions at ?s=7 TeV. The data sample corresponds to an integrated luminosity of 42 pb?. No significant deviation from the standard model is observed in the dimuon mass spectrum, allowing the following 95% C.L. limits to be set on the energy scale of contact interactions: ?>4.9 TeV (4.5 TeV) for constructive (destructive) interference in the left-left isoscalar compositeness model. These limits are the most stringent to date for ??qq contact interactions.

  17. Ligand-Mediated Modification of the Electronic Structure of CdSe Quantum Dots

    SciTech Connect (OSTI)

    Lee, Jonathan R.; Whitley, Heather D.; Meulenberg, Robert W.; Wolcott, Abraham; Zhang, Jin Z.; Prendergast, Peter; Lovingood, Derek D.; Strouse, Geoffrey F.; Ogitsu, Tadashi; Schwegler, Eric; Terminello, Louis J.; Van Buuren, Tony W.

    2012-05-18

    X-ray absorption spectroscopy and ab initio modeling of the experimental spectra have been used to investigate the effects of surface passivation on the unoccupied electronic states of CdSe quantum dots (QDs). Significant differences are observed in the unoccupied electronic structure of the CdSe QDs, which are shown to arise from variations in specific ligand-surface bonding interactions.

  18. Development of a Low Cost Insulated Foil Substrate for Cu(InGaSe)2 Photovoltaics

    SciTech Connect (OSTI)

    ERTEN ESER

    2012-01-22

    The project validated the use of stainless steel flexible substrate coated with silicone-based resin dielectric, developed by Dow Corning Corporation, for Cu(InGa)Se2 based photovoltaics. The projects driving force was the high performance of Cu(InGa)Se2 based photovoltaics coupled with potential cost reduction that could be achieved with dielectric coated SS web substrate.

  19. Surface Plasmon Excitation via Au Nanoparticles in CdSe Semiconductor

    SciTech Connect (OSTI)

    Pradhan, A. K.; Konda, R. B.; Mundle, R.; Mustafa, H.; Bamiduro, O.; Roy, U. N.; Cui, Y.; Burger, A.

    2008-10-23

    We present experimental evidence for the large Raman and photoluminescence enhancement in CdSe semiconductor films grown on Si and glass substrates due to excitation of surface plasmon resonances in proximate gold metal nanoparticles deposited on the surface of CdSe film. Heterojunction diodes containing n-CdSe on p-Si semiconductor were fabricated and the surface of the diodes was in situ coated with Au nanoparticles using the ultra-high vacuum pulsed-laser deposition technique. A significant enhancement of the photocurrent was obtained in CdSe/p-Si containing Au nanoparticles on the surface compared to CdSe/p-Si due to the enhanced photo-absorption within the semiconductor by the phenomenon of surface plasmon resonance. These observations suggest a variety of approaches for improving the performance of devices such as photodetectors, photovoltaic, and related devices, including biosensors.

  20. The High-Resolution Lightweight Telescope for the EUV (HiLiTE)

    SciTech Connect (OSTI)

    Martinez-Galarce, D S; Boerner, P; Soufli, R; De Pontieu, B; Katz, N; Title, A; Gullikson, E M; Robinson, J C; Baker, S L

    2008-06-02

    The High-resolution Lightweight Telescope for the EUV (HiLiTE) is a Cassegrain telescope that will be made entirely of Silicon Carbide (SiC), optical substrates and metering structure alike. Using multilayer coatings, this instrument will be tuned to operate at the 465 {angstrom} Ne VII emission line, formed in solar transition region plasma at {approx}500,000 K. HiLiTE will have an aperture of 30 cm, angular resolution of {approx}0.2 arc seconds and operate at a cadence of {approx}5 seconds or less, having a mass that is about 1/4 that of one of the 20 cm aperture telescopes on the Atmospheric Imaging Assembly (AIA) instrument aboard NASA's Solar Dynamics Observatory (SDO). This new instrument technology thus serves as a path finder to a post-AIA, Explorer-class missions.

  1. Search for Dijet Resonances in 7 TeV pp Collisions at CMS

    SciTech Connect (OSTI)

    Khachatryan, V.; et al.

    2010-11-01

    A search for narrow resonances in the dijet mass spectrum is performed using data corresponding to an integrated luminosity of 2.9 inverse pb collected by the CMS experiment at the LHC. Upper limits at the 95% confidence level (CL) are presented on the product of the resonance cross section, branching fraction into dijets, and acceptance, separately for decays into quark-quark, quark-gluon, or gluon-gluon pairs. The data exclude new particles predicted in the following models at the 95% CL: string resonances, with mass less than 2.50 TeV, excited quarks, with mass less than 1.58 TeV, and axigluons, colorons, and E_6 diquarks, in specific mass intervals. This extends previously published limits on these models.

  2. Fabrication of fluorescent composite with ultrafast aqueous synthesized high luminescent CdTe quantum dots

    SciTech Connect (OSTI)

    Zhang, Lei, E-mail: mejswu@ust.hk; Chen, Haibin, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk; Wu, Jingshen, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk [Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Hong Kong and Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong); Bi, Xianghong, E-mail: takubatch@gmail.com [Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong)

    2014-05-15

    Without precursor preparation, inert gas protection and enormous amount of additives and reductants, CdTe quantum dots (QDs) can be rapidly synthesized with high quality. A 600 nm photoluminescence peak wavelength could be obtained within 1 hour's refluxing through minimal addition of 1,2-diaminoethane (DAE). The theoretical design for the experiments are illustrated and further proved by the characterization results with different concentrations and reagents. On the other hand, generation of CdTe QDs was found even under room temperature by applying droplet quantity of DAE. This indicates that QDs can be synthesized with simply a bottle and no enormous additives required. The QDs were mixed into the epoxy matrix through solution casting method with cetyltrimethylammonium (CTA) capping for phase transfer. The acquired epoxy based nanocomposite exhibits good transparency, compatibility and fluorescence.

  3. Anti pp searches for quark-gluon plasma at TeV I

    SciTech Connect (OSTI)

    Turkot, F.

    1986-06-01

    Three experiments that have been approved to run at TeV I are discussed from the viewpoint of their capability to search for evidence of the QCD phase transition in proton-antiproton collisions at 1.6 TeV. One of these experiments, E-735, was proposed as a dedicated search for quark-gluon plasma effects with a detector designed to study large total E/sub T/, low P/sub T/ individual particles. The other two, E-741 (CDF) and E-740 (DO), embody general purpose four-pi detectors designed primarily to study the physics of W and Z bosons and other large P/sub T/ phenomena. The detectors and their quark-gluon plasma signals are compared. 8 refs., 6 figs., 4 tabs. (LEW)

  4. Diffusion-Reaction Modeling of Cu Migration in CdTe Solar Devices

    SciTech Connect (OSTI)

    Guo, Da; Brinkman, Daniel; Fang, Tian; Akis, Richard; Sankin, Igor; Vasileska, Dragica; Ringhofer, Christian

    2015-09-04

    In this work, we report on development of one-dimensional (1D) finite-difference and two-dimensional (2D) finite-element diffusion-reaction simulators to investigate mechanisms behind Cu-related metastabilities observed in CdTe solar cells [1]. The evolution of CdTe solar cells performance has been studied as a function of stress time in response to the evolution of associated acceptor and donor states. To achieve such capability, the simu-lators solve reaction-diffusion equations for the defect states in time-space domain self-consistently with the free carrier transport. Re-sults of 1-D and 2-D simulations have been compared to verify the accuracy of solutions.

  5. Higgs mass from compositeness at a multi-TeV scale

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Cheng, Hsin -Chia; Dobrescu, Bogdan A.; Gu, Jiayin

    2014-08-18

    Within composite Higgs models based on the top seesaw mechanism, we show that the Higgs field can arise as the pseudo Nambu-Goldstone boson of the broken U(3)more » $$_{L}$$ chiral symmetry associated with a vector-like quark and the t-b doublet. As a result, the lightest CP-even neutral state of the composite scalar sector is lighter than the top quark, and can be identified as the newly discovered Higgs boson. As a result, constraints on weak-isospin violation push the chiral symmetry breaking scale above a few TeV, implying that other composite scalars are probably too heavy to be probed at the LHC, but may be within reach at a future hadron collider with center-of-mass energy of about 100 TeV.« less

  6. Broadening of optical transitions in polycrystalline CdS and CdTe thin films

    SciTech Connect (OSTI)

    Li Jian; Chen Jie; Collins, R. W.

    2010-11-01

    The dielectric functions {epsilon} of polycrystalline CdS and CdTe thin films sputter deposited onto Si wafers were measured from 0.75 to 6.5 eV by in situ spectroscopic ellipsometry. Differences in {epsilon} due to processing variations are well understood using an excited carrier scattering model. For each sample, a carrier mean free path {lambda} is defined that is found to be inversely proportional to the broadening of each of the band structure critical points (CPs) deduced from {epsilon}. The rate at which broadening occurs with {lambda}{sup -1} is different for each CP, enabling a carrier group speed {upsilon}{sub g} to be identified for the CP. With the database for {upsilon}{sub g}, {epsilon} can be analyzed to evaluate the quality of materials used in CdS/CdTe photovoltaic heterojunctions.

  7. Rare-earth-rich tellurides: Gd{sub 4}NiTe{sub 2} and Er{sub 5}M{sub 2}Te{sub 2} (M=Co, Ni)

    SciTech Connect (OSTI)

    Magliocchi, Carmela; Meng, Fanqin; Hughbanks, Timothy . E-mail: trh@mail.chem.tamu.edu

    2004-11-01

    Three new rare earth metal-rich compounds, Gd{sub 4}NiTe{sub 2}, and Er{sub 5}M{sub 2}Te{sub 2} (M=Ni, Co), were synthesized in direct reactions using R, R{sub 3}M, and R{sub 2}Te{sub 3} (R=Gd, Er; M=Co, Ni) and single-crystal structures were determined. Gd{sub 4}NiTe{sub 2} is orthorhombic and crystallizes in space group Pnma with four formula units per cell. Lattice parameters at 110(2)K are a=15.548(9), b=4.113(2), c=11.7521(15)A. Er{sub 5}Ni{sub 2}Te{sub 2} and Er{sub 5}Co{sub 2}Te{sub 2} are isostructural and crystallize in the orthorhombic space group Cmcm with two formula units per cell. Lattice parameters at 110(2)K are a=3.934(1), b=14.811(4), c=14.709(4)A, and a=3.898(1), b=14.920(3), c=14.889(3)A, respectively. Metal-metal bonding correlations were analyzed using the empirical Pauling bond order concept.

  8. Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance

    SciTech Connect (OSTI)

    Lemmon, John P.; Polikarpov, Evgueni; Bennett, Wendy D.; Kovarik, Libor

    2012-05-25

    We report on CdS/CdTe photovoltaic devices that contain a thin Ta₂O₅ film deposited onto the CdS window layer by sputtering. We show that for thicknesses below 5 nm, Ta₂O₅ films between CdS and CdTe positively affect the solar cell performance, improving JSC, VOC, and the cell power conversion efficiency despite the insulating nature of the interlayer material. Using the Ta₂O₅ interlayer, a VOC gain of over 100 mV was demonstrated compared to a CdTe/CdS baseline. Application of a 1nm Ta₂O₅ interlayer enabled the fabrication of CdTe solar cells with extremely thin (less than 30 nm) CdS window layers. The efficiency of these cells exceeded that of a base line cell with 95 nm of CdS.

  9. Modeling Cu Migration in CdTe Solar Cells Under Device-Processing and Long-Term Stability Conditions: Preprint

    SciTech Connect (OSTI)

    Teeter, G.; Asher, S.

    2008-05-01

    An impurity migration model for systems with material interfaces is applied to Cu migration in CdTe solar cells. In the model, diffusion fluxes are calculated from the Cu chemical potential gradient. Inputs to the model include Cu diffusivities, solubilities, and segregation enthalpies in CdTe, CdS and contact materials. The model yields transient and equilibrium Cu distributions in CdTe devices during device processing and under field-deployed conditions. Preliminary results for Cu migration in CdTe photovoltaic devices using available diffusivity and solubility data from the literature show that Cu segregates in the CdS, a phenomenon that is commonly observed in devices after back-contact processing and/or stress conditions.

  10. Polarization of Bi{sub 2}Te{sub 3} thin film in a floating-gate capacitor structure

    SciTech Connect (OSTI)

    Yuan, Hui E-mail: qli6@gmu.edu; Li, Haitao; Zhu, Hao; Zhang, Kai; Baumgart, Helmut; Bonevich, John E.; Richter, Curt A.; Li, Qiliang E-mail: qli6@gmu.edu

    2014-12-08

    Metal-Oxide-Semiconductor (MOS) capacitors with Bi{sub 2}Te{sub 3} thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi{sub 2}Te{sub 3} thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33?eV for separating the electron and hole pairs in the bulk of Bi{sub 2}Te{sub 3}, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent endurance, and the complementary metaloxidesemiconductor compatibility, the Bi{sub 2}Te{sub 3} embedded MOS structures are very interesting for memory application.

  11. The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

    SciTech Connect (OSTI)

    Zha, Gangqiang; Yang, Jian; Xu, Lingyan; Feng, Tao; Wang, Ning; Jie, Wanqi

    2014-01-28

    Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance can be explained using the deep trap model.

  12. Dijet Azimuthal Decorrelations in pp Collisions at sqrt(s) = 7 TeV

    SciTech Connect (OSTI)

    Khachatryan, Vardan; et al.

    2011-03-01

    Measurements of dijet azimuthal decorrelations in pp collisions at sqrt(s) = 7 TeV using the CMS detector at the CERN LHC are presented. The analysis is based on an inclusive dijet event sample corresponding to an integrated luminosity of 2.9 inverse picobarns. The results are compared to predictions from perturbative QCD calculations and various Monte Carlo event generators. The dijet azimuthal distributions are found to be sensitive to initial-state gluon radiation.

  13. Quantum oscillations in magnetothermopower measurements of topological insulator Bi2Te3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qu, Dong -Xia; Hor, Y. S.; Cava, R. J.

    2012-12-10

    We report the magnetothermopower measurements of the nonmetallic topological insulator Bi2Te3 in magnetic fields up to 35 T. Quantum oscillations arising from surface states are observed in both thermoelectric and conductivity tensors. The inferred surface thermopower has a peak magnitude ~1 mV/K possibly as a result of surface electron and bulk phonon interaction. At the n = 1 Landau level, we resolve additional quantum oscillations signaling Landau sublevels.

  14. CsBi4Te6: A High-Performance Thermoelectric Material for Low-Temperature

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Applications | Energy Frontier Research Centers CsBi4Te6: A High-Performance Thermoelectric Material for Low-Temperature Applications Home Author: D.Y. Chung, T. Hogan, P. Brazis, M. Rocci-Lane, C. Kannawurf, M. Bastea, C. Uher, M. Kanatzidis Year: 2000 Abstract: Thermoelectric (Peltier) heat pumps are capable of refrigerating solid or fluid objects, and unlike conventional vapor compressor systems, they can be miniaturized without loss of efficiency. More efficient thermoelectric materials

  15. New acceptor centers of the background impurities in p-CdZnTe

    SciTech Connect (OSTI)

    Plyatsko, S. V. Rashkovetskyi, L. V.

    2013-07-15

    Low-temperature photoluminescence data are used to study the redistribution of the background impurities and host components of p-CdZnTe single crystals with a resistivity of 1-50 {Omega} cm upon their interaction with infrared laser radiation. The effect of widening of the band gap and the formation of new acceptor centers in response to laser-stimulated changes in the system of intrinsic defects are established. The activation energy of the new acceptor centers is determined.

  16. Probing the size and environment induced phase transformation in CdSe quantum dots

    SciTech Connect (OSTI)

    Karakoti, Ajay S.; Sanghavi, Shail P.; Nachimuthu, Ponnusamy; Yang, Ping; Thevuthasan, Suntharampillai

    2011-11-17

    The structural and electronic properties of CdSe quantum dots in toluene and drop-casted on Si wafer were investigated by in-situ micro X-ray diffraction, X-ray photoelectron spectroscopy and UV-Vis absorption and emission spectroscopy. The in-situ micro diffraction data show that the CdSe quantum dots capped with TOPO or hexadecylamine (HDA) in toluene exhibit predominantly wurtzite crystal structure, which undergoes a phase transformation to zinc blende crystal structure following drop casting on Si and this phase transition increases with decreasing the size of the CdSe quantum dots. Decreasing the size of quantum dots also increases the Se vacancies that facilitate the phase transformation. The X-ray photoelectron spectra show a systematic increase in the core level binding energies of Cd 3d and Se 3d, the band gap and the Cd/Se ratio as the size of the quantum dots decreases from 6.6nm to 2.1nm. This is attributed to the quantum confinement of CdSe crystallites by the capping ligands in toluene which increases with decreasing the size of the quantum dots. However, drop-casting quantum dots on Si alter the density and arrangement of capping ligands and solvent molecules on the quantum dots which causes significant phase transformation.

  17. Search for new particles decaying to diject in 7 TeV proton-proton collisions at CMS

    SciTech Connect (OSTI)

    Ozturk, Sertac; /Cukurova U.

    2011-03-01

    This thesis presents a measurement of the dijet invariant mass spectrum and search for new particles decaying to dijets at CMS in 7 TeV pp collisions using data corresponding to an integrated luminosity of 2.875 pb{sup -1}. The measured dijet mass distribution is compared to QCD prediction from PYTHIA . It is required the pseudorapidity separation of the two jets to satisfy |Dh| < 1.3 with each jet inside the region of |{eta}| < 2.5. The observed dijet mass spectrum is fitted by a smooth function to search for dijet resonances. Since there is no evidence for dijet resonances, the upper limits at 95% Confidence Level (C.L.) on the resonance cross section are set. These generic cross section limits are compared with theoretical predictions for the cross section for several models of new particles: string resonances, axigluons, colorons, excited quarks, E{sub 6} diquarks, Randall-Sundrum gravitons, W' and Z'. It is excluded at 95% C.L. string resonances in the mass range 0.50 < M(S) < 2.50 TeV, excited quarks in the mass range 0.50 < M(q*) < 1.58 TeV, axigluons and colorons in the mass ranges 0.50 < M(A) < 1.17 TeV and 1.47 < M(A) < 1.52 TeV, and E{sub 6} diquarks in the mass ranges 0.50 < M(D) < 0.58 TeV, 0.97 < M(D) < 1.08 TeV, and 1.45 < M(D) < 1.60 TeV. These exclusions extend previously published limits on all models.

  18. Beam extraction from TeV accelerators using channeling in bent crystals

    SciTech Connect (OSTI)

    Carrigan, R.A. Jr.; Toohig, T.E.; Tsyganov, E.N.; Superconducting Super Collider Lab., Dallas, TX; Joint Inst. for Nuclear Research, Dubna )

    1989-08-01

    Bent crystal channeling offers an interesting alternative for beam extraction from trans-GeV accelerators. Conventional extraction employs resonant beam blow-up coupled with electromagnetic beam deflecting channels. It is limited by the length of the available accelerator straight section. Channeling crystals require much less space. A five-step approach to applying crystal extraction in the Superconducting Super Collider (SSC) is discussed. Two steps, extraction from the 8 GeV Dubna Synchrophasotron and the 76 GeV Serpukhov accelerator, have occurred. The next possibility is extraction from a multi-hundred GeV superconducting accelerator. In the nineties the program could continue at UNK (3 TeV) and culminate at the TeV SSC. The possibilities and limitations of crystal extraction are reviewed. More information is needed on dechanneling in bent crystals including the effects of dislocations at TeV energies. Long, dislocation-free'' crystals are required. A more thorough understanding of the theory of crystal extraction is also desirable. 12 refs.

  19. Searching for Neutrinoless Double-Beta Decay of130Te with CUORE

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Artusa, D. R.; Avignone, F. T.; Azzolini, O.; Balata, M.; Banks, T. I.; Bari, G.; Beeman, J.; Bellini, F.; Bersani, A.; Biassoni, M.; et al

    2015-01-01

    Neutrinoless double-beta (0???) decay is a hypothesized lepton-number-violating process that offers the only known means of asserting the possible Majorana nature of neutrino mass. The Cryogenic Underground Observatory for Rare Events (CUORE) is an upcoming experiment designed to search for 0???decay of130Te using an array of 988 TeO2crystal bolometers operated at 10?mK. The detector will contain 206?kg of130Te and have an average energy resolution of 5?keV; the projected 0???decay half-life sensitivity after five years of livetime is 1.6??1026?y at 1?(9.5??1025?y at the 90% confidence level), which corresponds to an upper limit on the effective Majorana massmorein the range 40100?meV (50130?meV). In this paper, we review the experimental techniques used in CUORE as well as its current status and anticipated physics reach.less

  20. Search for Neutrinoless Double-Beta Decay of Te130 with CUORE-0

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Alfonso, K.; Artusa, D. R.; Avignone, F. T.; Azzolini, O.; Balata, M.; Banks, T. I.; Bari, G.; Beeman, J. W.; Bellini, F.; Bersani, A.; et al

    2015-09-03

    We report the results of a search for neutrinoless double-beta decay in a 9.8 kg yr exposure of 130Te using a bolometric detector array, CUORE-0. The characteristic detector energy resolution and background level in the region of interest are 5:1± 0:3 keV FWHM and 0:058 ± 0:004 (stat) ± 0:002 (syst) counts / (keV kg yr), respectively. The median 90% C.L. lower-limit half-life sensitivity of the experiment is 2:9x1024 yr and surpasses the sensitivity of previous searches. We find no evidence for neutrinoless double-beta decay of 130Te and place a Bayesian lower bound on the decay half-life, T0ν1/2 > 2.7more » x 1024 yr at 90% C.L. Combining CUORE-0 data with the 19.75 kg yr exposure of 130Te from the Cuoricino experiment we obtain T0ν1/2 > 4.0 x 1024 yr at 90% C.L. (Bayesian), the most stringent limit to date on this half-life. Lastly, using a range of nuclear matrix element estimates we interpret this as a limit on the e ective Majorana neutrino mass, mββ < 270 -760 meV.« less

  1. Searching for Neutrinoless Double-Beta Decay of 130 Te with CUORE

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Artusa, D. R.; Avignone, F. T.; Azzolini, O.; Balata, M.; Banks, T. I.; Bari, G.; Beeman, J.; Bellini, F.; Bersani, A.; Biassoni, M.; et al

    2015-01-01

    Neumore » trinoless double-beta (0 ν β β ) decay is a hypothesized lepton-number-violating process that offers the only known means of asserting the possible Majorana nature of neutrino mass. The Cryogenic Underground Observatory for Rare Events (CUORE) is an upcoming experiment designed to search for 0 ν β β decay of 130 Te using an array of 988 TeO 2 crystal bolometers operated at 10 mK. The detector will contain 206 kg of 130 Te and have an average energy resolution of 5 keV; the projected 0 ν β β decay half-life sensitivity after five years of livetime is 1.6 × 10 26  y at 1 σ (9.5 × 10 25  y at the 90% confidence level), which corresponds to an upper limit on the effective Majorana mass in the range 40–100 meV (50–130 meV). In this paper, we review the experimental techniques used in CUORE as well as its current status and anticipated physics reach.« less

  2. High-efficiency, flexible CdTe solar cells on ultra-thin glass substrates

    SciTech Connect (OSTI)

    Mahabaduge, H. P.; Rance, W. L.; Burst, J. M.; Reese, M. O.; Gessert, T. A.; Metzger, W. K.; Barnes, T. M.; Meysing, D. M.; Wolden, C. A.; Li, J.; Beach, J. D.; Garner, S.

    2015-03-30

    Flexible, high-efficiency, low-cost solar cells can enable applications that take advantage of high specific power, flexible form factors, lower installation and transportation costs. Here, we report a certified record efficiency of 16.4% for a flexible CdTe solar cell that is a marked improvement over the previous standard (14.05%). The improvement was achieved by replacing chemical-bath-deposited CdS with sputtered CdS:O and also replacing the high-temperature sputtered ZnTe:Cu back contact layer with co-evaporated and rapidly annealed ZnTe:Cu. We use quantum efficiency and capacitance-voltage measurements combined with device simulations to identify the reasons for the increase in efficiency. Both device simulations and experimental results show that higher carrier density can quantitatively account for the increased open circuit voltage (V{sub OC}) and Fill Factor (FF), and likewise, the increase in short circuit current density (J{sub SC}) can be attributed to the more transparent CdS:O.

  3. Near-Unity Quantum Yields of Biexciton Emission from CdSe=CdS Nanocrystals

    Office of Scientific and Technical Information (OSTI)

    Measured Using Single-Particle Spectroscopy (Journal Article) | SciTech Connect Near-Unity Quantum Yields of Biexciton Emission from CdSe=CdS Nanocrystals Measured Using Single-Particle Spectroscopy Citation Details In-Document Search Title: Near-Unity Quantum Yields of Biexciton Emission from CdSe=CdS Nanocrystals Measured Using Single-Particle Spectroscopy Biexciton photoluminescence (PL) quantum yields (Q2X) of individual CdSe/CdS core-shell nanocrystal quantum dots with various shell

  4. Optimal packing size of non-ligated CdSe nanoclusters for microstructure synthesis

    SciTech Connect (OSTI)

    Tefera, Anteneh G.; Mochena, Mogus D.; Johnson, Elijah; Dickerson, James

    2014-09-14

    Structural and electrostatic properties of nanoclusters of CdSe of diameter 1–2 nm are studied with first principle calculations to determine the optimal size for synthesizing microstructures. Based on robustness of the core structure, i.e., the retention of tetrahedral geometry, hexagonal ring structure, and overall wu{sup ¨}rtzite structure to surface relaxations, we conclude that nanoclusters of ~2 nm diameter are the best candidates to form a dense microstructure with minimal interstitial space. Se-terminated surfaces retain a zigzag structure as Se atoms are pulled out and Cd atoms are pulled in due to relaxation, therefore, are best suited for inter-nanocluster formations.

  5. An oleic acid-capped CdSe quantum-dot sensitized solar cell

    SciTech Connect (OSTI)

    Chen Jing; Song, J. L.; Deng, W. Q.; Sun, X. W.; Jiang, C. Y.; Lei, W.; Huang, J. H.; Liu, R. S.

    2009-04-13

    In this letter, we report an oleic acid (OA)-capped CdSe quantum-dot sensitized solar cell (QDSSC) with an improved performance. The TiO{sub 2}/OA-CdSe photoanode in a two-electrode device exhibited a photon-to-current conversion efficiency of 17.5% at 400 nm. At AM1.5G irradiation with 100 mW/cm{sup 2} light intensity, the QDSSCs based on OA-capped CdSe showed a power conversion efficiency of about 1%. The function of OA was to increase QD loading, extend the absorption range and possibly suppress the surface recombination.

  6. Thickness-dependent coherent phonon frequency in ultrathin FeSe/SrTiO3

    Office of Scientific and Technical Information (OSTI)

    films (Journal Article) | SciTech Connect Thickness-dependent coherent phonon frequency in ultrathin FeSe/SrTiO3 films Citation Details In-Document Search Title: Thickness-dependent coherent phonon frequency in ultrathin FeSe/SrTiO3 films Ultrathin FeSe films grown on SrTiO3 substrates are a recent milestone in atomic material engineering due to their important role in understanding unconventional superconductivity in Fe-based materials. By using femtosecond time- and angle-resolved

  7. Ultrathin nanosheets of CrSiTe3. A semiconducting two-dimensional ferromagnetic material

    SciTech Connect (OSTI)

    Lin, Ming -Wei; Zhung, Houlong L.; Yan, Jiaqiang; Ward, Thomas Zac; Puretzky, Alexander A.; Rouleau, Christopher M.; Gai, Zheng; Liang, Liangbo; Meunier, Vincent; Ganesh, Panchapakesan; Kent, Paul R. C.; Sumpter, Bobby G.; Mandrus, David G.; Geohegan, David B.; Xiao, Kai

    2015-11-27

    Finite range ferromagnetism and antiferromagnetism in two-dimensional (2D) systems within an isotropic Heisenberg model at non-zero temperature were originally proposed to be impossible. However, recent theoretical studies using an Ising model have recently shown that 2D magnetic crystals can exhibit magnetism. Experimental verification of existing 2D magnetic crystals in this system has remained elusive. In this work we for the first time exfoliate the CrSiTe3, a bulk ferromagnetic semiconductor, to mono- and few-layer 2D crystals onto a Si/SiO2 substrate. The Raman spectra show the good stability and high quality of the exfoliated flakes, consistent with the computed phonon spectra of 2D CrSiTe3, giving a strong evidence for the existence of 2D CrSiTe3 crystals. When the thickness of the CrSiTe3 crystals is reduced to few-layers, we observed a clear change in resistivity at 80~120 K, consistent with the theoretical calculations on the Curie temperature (Tc) of ~80 K for the magnetic ordering of 2D CrSiTe3 crystals. As a result, the ferromagnetic mono- and few-layer 2D CrSiTe3 indicated here should enable numerous applications in nano-spintronics.

  8. Multiwavelength study of the northeastern outskirts of the extended TeV source HESS J1809193

    SciTech Connect (OSTI)

    Rangelov, Blagoy; Kargaltsev, Oleg; Hare, Jeremy; Volkov, Igor; Posselt, Bettina; Pavlov, George G.

    2014-11-20

    HESS J1809193 is an extended TeV ?-ray source in the Galactic plane. Multiwavelength observations of the HESS J1809193 field reveal a complex picture. We present results from three Chandra X-Ray Observatory and two Suzaku observations of a region in the northeastern outskirts of HESS J1809-193, where enhanced TeV emission has been reported. Our analysis also includes GeV ?-ray and radio data. One of the X-ray sources in the field is the X-ray binary XTE J1810-189, for which we present the outburst history from multiple observatories and confirm that XTE J1810-189 is a strongly variable type I X-ray burster, which can hardly produce TeV emission. We investigate whether there is any connection between the possible TeV extension of HESS J1809193 and the sources seen at lower energies. We find that another X-ray binary candidate, Suzaku J1811-1900, and a radio supernova remnant, SNR G11.40.1, can hardly be responsible for the putative TeV emission. Our multiwavelength classification of fainter X-ray point sources also does not produce a plausible candidate. We conclude that the northeast extension of HESS J1809193, if confirmed by deeper observations, can be considered a dark acceleratora TeV source without a visible counterpart at lower energies.

  9. Topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te thin films on SrTiO{sub 3} (001) with tunable Fermi levels

    SciTech Connect (OSTI)

    Guo, Hua; Liu, Jun-Wei; Wang, Zhen-Yu; Wu, Rui; Ji, Shuai-Hua; Duan, Wen-Hui; Chen, Xi Xue, Qi-Kun; Yan, Chen-Hui; Zhang, Zhi-Dong; Wang, Li-Li; He, Ke; Ma, Xu-Cun

    2014-05-01

    In this letter, we report a systematic study of topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te (0 < x < 1) thin films grown by molecular beam epitaxy on SrTiO{sub 3}(001). Two domains of Pb{sub x}Sn{sub 1-x}Te thin films with intersecting angle of ? ? 45 were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES). ARPES study of Pb{sub x}Sn{sub 1-x}Te thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of Pb{sub x}Sn{sub 1-x}Te thin films.

  10. Search for resonances and quantum black holes using dijet mass spectra in proton-proton collisions at sqrt(s)=8 TeV

    SciTech Connect (OSTI)

    Khachatryan, V.; et al.,

    2015-03-01

    A search for resonances and quantum black holes is performed using the dijet mass spectra measured in proton-proton collisions at sqrt(s)=8 TeV with the CMS detector at the LHC. The data set corresponds to an integrated luminosity of 19.7 inverse femtobarns. In a search for narrow resonances that couple to quark-quark, quark-gluon, or gluon-gluon pairs, model-independent upper limits, at 95% confidence level, are obtained on the production cross section of resonances, with masses above 1.2 TeV. When interpreted in the context of specific models the limits exclude: string resonances with masses below 5.0 TeV; excited quarks below 3.5 TeV; scalar diquarks below 4.7 TeV; W' bosons below 1.9 TeV or between 2.0 and 2.2 TeV; Z' bosons below 1.7 TeV; and Randall-Sundrum gravitons below 1.6 TeV. A separate search is conducted for narrow resonances that decay to final states including b quarks. The first exclusion limit is set for excited b quarks, with a lower mass limit between 1.2 and 1.6 TeV depending on their decay properties. Searches are also carried out for wide resonances, assuming for the first time width-to-mass ratios up to 30%, and for quantum black holes with a range of model parameters. The wide resonance search excludes axigluons and colorons with mass below 3.6 TeV, and color-octet scalars with mass below 2.5 TeV. Lower bounds between 5.0 and 6.3 TeV are set on the masses of quantum black holes.

  11. Low-temperature ferromagnetic properties in Co-doped Ag{sub 2}Se nanoparticles

    SciTech Connect (OSTI)

    Yang, Fengxia E-mail: xia9020@hust.edu.cn; Yu, Gen; Han, Chong; Liu, Tingting; Zhang, Duanming; Xia, Zhengcai E-mail: xia9020@hust.edu.cn

    2014-01-06

    β-Ag{sub 2}Se is a topologically nontrivial insulator. The magnetic properties of Co-doped Ag{sub 2}Se nanoparticles with Co concentrations up to 40% were investigated. The cusp of zero-field-cooling magnetization curves and the low-temperature hysteresis loops were observed. With increasing concentration of Co{sup 2+} ions mainly substituting Ag{sub I} sites in the Ag{sub 2}Se structure, the resistivity, Curie temperature T{sub c}, and magnetization increased. At 10 T, a sharp drop of resistance near T{sub c} was detected due to Co dopants. The ferromagnetic behavior in Co-doped Ag{sub 2}Se might result from the intra-layer ferromagnetic coupling and surface spin. This magnetic semiconductor is a promising candidate in electronics and spintronics.

  12. Enhanced spontaneous emission of CdSe quantum dots in monolithic II-VI pillar microcavities

    SciTech Connect (OSTI)

    Lohmeyer, H.; Kruse, C.; Sebald, K.; Gutowski, J.; Hommel, D.

    2006-08-28

    The emission properties of CdSe/ZnSe quantum dots in ZnSe-based pillar microcavities are studied. All-epitaxial cavities made of ZnSSe and MgS/ZnCdSe superlattices with a single quantum-dot sheet embedded have been grown by molecular beam epitaxy. Pillar structures with diameters down to 500 nm have been realized by focused-ion-beam etching. A pronounced enhancement of the spontaneous emission rate of quantum dots coupling to the fundamental mode of the cavities is found as evidence for the Purcell effect. The enhancement by a factor of up to 3.8 depends systematically on the pillar diameter and thus on the Purcell factor of the individual pillars.

  13. Phonon properties of BaFe?X? (X=S, Se) spin ladder compounds

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Popovicq, Z. V.; Petrovic, C.; Scepanovic, M.; Lazarevic, N.; Opacic, M.; Radonjic, M. M.; Tanaskovic, D.; Lei, Hechang

    2015-02-27

    We present the Raman scattering spectra of the S=2 spin ladder compounds BaFe?X? (X=S,Se) in a temperature range between 20 and 400 K. Although the crystal structures of these two compounds are both orthorhombic and very similar, they are not isostructural. The unit cell of BaFe?S? (BaFe?Se?) is base-centered Cmcm (primitive Pnma), giving 18 (36) modes to be observed in the Raman scattering experiment. We have detected almost all Raman active modes, predicted by factor group analysis, which can be observed from the cleavage planes of these compounds. Assignment of the observed Raman modes of BaFe?S(Se)? is supported by themorelattice dynamics calculations. The antiferromagnetic long-range spin ordering in BaFe?Se? below TN=255K leaves a fingerprint both in the A1g and B3g phonon mode linewidth and energy.less

  14. Super-Poissonian Statistics of Photon Emission from Single CdSe...

    Office of Scientific and Technical Information (OSTI)

    Statistics of Photon Emission from Single CdSe-CdS Core-Shell Nanocrystals Coupled to Metal Nanostructures Citation Details In-Document Search Title: Super-Poissonian Statistics of ...

  15. Flow of US/SE Program Funding to National Laboratories (FY 2014 Enacted)

    Broader source: Energy.gov [DOE]

    This figure illustrates the flow of funding to each of 17 DOE National Laboratories from five of the six US/SE program offices. IE does not directly fund program work at the National Laboratories.

  16. Substitution of Ni for Fe in superconducting Fe0.98Te0.5Se0.5 depresses the normal-state conductivity but not the magnetic spectral weight

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Jinghui; Zhong, Ruidan; Li, Shichao; Gan, Yuan; Xu, Zhijun; Zhang, Cheng; Ozaki, T.; Matsuda, M.; Zhao, Yang; Li, Qiang; et al

    2015-01-05

    We have performed systematic resistivity and inelastic neutron scattering measurements on Fe₀.₉₈₋zNizTe₀.₅Se₀.₅ samples to study the impact of Ni substitution on the transport properties and the low-energy (≤ 12 meV) magnetic excitations. It is found that, with increasing Ni doping, both the conductivity and superconductivity are gradually suppressed; in contrast, the low-energy magnetic spectral weight changes little. Comparing with the impact of Co and Cu substitution, we find that the effects on conductivity and superconductivity for the same degree of substitution grow systematically as the atomic number of the substituent deviates from that of Fe. The impact of the substituentsmore » as scattering centers appears to be greater than any contribution to carrier concentration. The fact that low-energy magnetic spectral weight is not reduced by increased electron scattering indicates that the existence of antiferromagnetic correlations does not depend on electronic states close to the Fermi energy.« less

  17. Advanced processing technology for high-efficiency, thin-film CuInSe{sub 2} and CdTe solar cells. Annual subcontract report, 1 March 1993--28 February 1994

    SciTech Connect (OSTI)

    Morel, D.L.; Ferekides, C.S.

    1994-07-01

    This annual report details activities in research on advanced processing technology for high-effiency, thin-film solar cells.

  18. AeroSys: Noncompliance Determination (2010-SE-0302) | Department of Energy

    Energy Savers [EERE]

    Noncompliance Determination (2010-SE-0302) AeroSys: Noncompliance Determination (2010-SE-0302) April 13, 2010 DOE issued a Notice of Noncompliance Determination to AeroSys, Inc. finding that basic model THDC-24SG does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. AeroSys must immediately notify each person (or company) to whom AeroSys distributed the noncompliant product that the product does not meet Federal standards. In

  19. Unique Challenges Accompany Thick-Shell CdSe/nCdS (n > 10) Nanocrystal Synthesis

    SciTech Connect (OSTI)

    Guo, Y; Marchuk, K; Abraham, R; Sampat, S; Abraham, R.; Fang, N; Malko, AV; Vela, J

    2011-12-23

    Thick-shell CdSe/nCdS (n {ge} 10) nanocrystals were recently reported that show remarkably suppressed fluorescence intermittency or 'blinking' at the single-particle level as well as slow rates of Auger decay. Unfortunately, whereas CdSe/nCdS nanocrystal synthesis is well-developed up to n {le} 6 CdS monolayers (MLs), reproducible syntheses for n {ge} 10 MLs are less understood. Known procedures sometimes result in homogeneous CdS nucleation instead of heterogeneous, epitaxial CdS nucleation on CdSe, leading to broad and multimodal particle size distributions. Critically, obtained core/shell sizes are often below those desired. This article describes synthetic conditions specific to thick-shell growth (n {ge} 10 and n {ge} 20 MLs) on both small (sub2 nm) and large (>4.5 nm) CdSe cores. We find added secondary amine and low concentration of CdSe cores and molecular precursors give desired core/shell sizes. Amine-induced, partial etching of CdSe cores results in apparent shell-thicknesses slightly beyond those desired, especially for very-thick shells (n {ge} 20 MLs). Thermal ripening and fast precursor injection lead to undesired homogeneous CdS nucleation and incomplete shell growth. Core/shells derived from small CdSe (1.9 nm) have longer PL lifetimes and more pronounced blinking at single-particle level compared with those derived from large CdSe (4.7 nm). We expect our new synthetic approach will lead to a larger throughput of these materials, increasing their availability for fundamental studies and applications.

  20. Synthesis of CdSe quantum dots for quantum dot sensitized solar cell

    SciTech Connect (OSTI)

    Singh, Neetu Kapoor, Avinashi; Kumar, Vinod; Mehra, R. M.

    2014-04-24

    CdSe Quantum Dots (QDs) of size 0.85 nm were synthesized using chemical route. ZnO based Quantum Dot Sensitized Solar Cell (QDSSC) was fabricated using CdSe QDs as sensitizer. The Pre-synthesized QDs were found to be successfully adsorbed on front ZnO electrode and had potential to replace organic dyes in Dye Sensitized Solar Cells (DSSCs). The efficiency of QDSSC was obtained to be 2.06 % at AM 1.5.

  1. Supercharging a Superconductor: Understanding the Tc enhancement of FeSe |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stanford Synchrotron Radiation Lightsource Supercharging a Superconductor: Understanding the Tc enhancement of FeSe Wednesday, April 13, 2016 - 3:00pm SLAC, Redtail Hawk Conference Room 108A Speaker: Rob Moore, SIMES Program Description The recent synthesis of interfaces and heterostructures with atomic precision has revealed numerous new and unexpected phenomena. The order of magnitude enhancement of the superconducting properties of FeSe in the ultrathin 2D limit is an example of such a

  2. Super-Poissonian Statistics of Photon Emission from Single CdSe-CdS

    Office of Scientific and Technical Information (OSTI)

    Core-Shell Nanocrystals Coupled to Metal Nanostructures (Journal Article) | SciTech Connect Super-Poissonian Statistics of Photon Emission from Single CdSe-CdS Core-Shell Nanocrystals Coupled to Metal Nanostructures Citation Details In-Document Search Title: Super-Poissonian Statistics of Photon Emission from Single CdSe-CdS Core-Shell Nanocrystals Coupled to Metal Nanostructures Authors: Park, Young-Shin ; Ghosh, Yagnaseni ; Chen, Yongfen ; Piryatinski, Andrei ; Xu, Ping ; Mack, Nathan H. ;

  3. Doping SrTiO3 supported FeSe by excess atoms and oxygen vacancies

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shanavas, Kavungal Veedu; Singh, David J.

    2015-07-24

    Photoemission studies of FeSe monolayer films on SrTiO3 substrate have shown electronic structures that deviate from pristine FeSe, consistent with heavy electron doping. With the help of first-principles calculations we studied the effect of excess Fe and Se atoms on the monolayer and oxygen vacancies in the substrate in order to understand the reported Fermi surface in this system. We find that both excess Fe and Se atoms prefer the same adsorption site above the bottom Se atoms on the monolayer. The adsorbed Fe is strongly magnetic and contributes electrons to the monolayer, while excess Se hybridizes with the monolayermore » Fe-d states and partially opens a gap just above the Fermi energy. We also find that the two-dimensional electron gas generated by the oxygen vacancies is partly transferred to the monolayer and can potentially suppress the hole pockets around the Γ point. Furthermore, both O vacancies in the SrTiO3 substrate and excess Fe over the monolayer can provide high levels of electron doping.« less

  4. A comparative transport study of Bi{sub 2}Se{sub 3} and Bi{sub 2}Se{sub 3}/yttrium iron garnet

    SciTech Connect (OSTI)

    Jiang, Zilong; Tang, Chi; Shi, Jing; Katmis, Ferhat; Wei, Peng; Moodera, Jagadeesh S.

    2014-06-02

    Bilayers of 20 quintuple layer Bi{sub 2}Se{sub 3} on 30 nm thick yttrium iron garnet (YIG) have been grown with molecular beam epitaxy in conjunction with pulsed laser deposition. The presence of the ferri-magnetic insulator YIG causes additional scattering to the surface states of the Bi{sub 2}Se{sub 3} topological insulator layer, as indicated by the temperature dependence of the resistivity. From the two-channel analysis of the Hall data, we find that the surface contribution in the bilayer samples is greatly reduced. Furthermore, the weak antilocalization effect from the surface states is clearly suppressed due to the presence of the YIG layer.

  5. Magnetic order tuned by Cu substitution in Fe1.1–zCuzTe

    SciTech Connect (OSTI)

    Wen, Jinsheng; Xu, Zhijun; Xu, Guangyong; Lumsden, M. D.; Valdivia, P. N.; Bourret-Courchesne, E.; Gu, Genda; Lee, Dung-Hai; Tranquada, J. M.; Birgeneau, R. J.

    2012-07-02

    We study the effects of Cu substitution in Fe₁.₁Te, the nonsuperconducting parent compound of the iron-based superconductor, Fe₁₊yTe₁₋xSex, utilizing neutron scattering techniques. It is found that the structural and magnetic transitions, which occur at ~60 K without Cu, are monotonically depressed with increasing Cu content. By 10% Cu for Fe, the structural transition is hardly detectable, and the system becomes a spin glass below 22 K, with a slightly incommensurate ordering wave vector of (0.5–δ, 0, 0.5) with δ being the incommensurability of 0.02, and correlation length of 12 Å along the a axis and 9 Å along the c axis. With 4% Cu, both transition temperatures are at 41 K, though short-range incommensurate order at (0.42, 0, 0.5) is present at 60 K. With further cooling, the incommensurability decreases linearly with temperature down to 37 K, below which there is a first-order transition to a long-range almost-commensurate antiferromagnetic structure. A spin anisotropy gap of 4.5 meV is also observed in this compound. Our results show that the weakly magnetic Cu has a large effect on the magnetic correlations; it is suggested that this is caused by the frustration of the exchange interactions between the coupled Fe spins.

  6. Hidden Superlattice in Tl2(SC6H4S) and Tl2(SeC6H4Se) Solved from Powder X-ray Diffraction

    SciTech Connect (OSTI)

    K Stone; D Turner; M Singh; T Vaid; P Stephens

    2011-12-31

    The crystal structures of the isostructural title compounds poly[({mu}-benzene-1,4-dithiolato)dithallium], Tl{sub 2}(SC{sub 6}H{sub 4}S), and poly[({mu}-benzene-1,4-diselenolato)dithallium], Tl{sub 2}(SeC{sub 6}H{sub 4}Se), were solved by simulated annealing from high-resolution synchrotron X-ray powder diffraction. Rietveld refinements of an initial structure with one formula unit per triclinic cell gave satisfactory agreement with the data, but led to a structure with impossibly close non-bonded contacts. A disordered model was proposed to alleviate this problem, but an alternative supercell structure leads to slightly improved agreement with the data. The isostructural superlattice structures were confirmed for both compounds through additional data collection, with substantially better counting statistics, which revealed the presence of very weak superlattice peaks not previously seen. Overall, each structure contains Tl-S or Tl-Se two-dimensional networks, connected by phenylene bridges. The sulfur (or selenium) coordination sphere around each thallium is a highly distorted square pyramid or a 'see-saw' shape, depending upon how many Tl-S or Tl-Se interactions are considered to be bonds. In addition, the two compounds contain pairs of Tl{sup I} ions that interact through a closed-shell 'thallophilic' interaction: in the sulfur compound there are two inequivalent pairs of Tl atoms with Tl-Tl distances of 3.49 and 3.58 {angstrom}, while in the selenium compound those Tl-Tl interactions are at 3.54 and 3.63 {angstrom}.

  7. Non-H{sub 2}Se, ultra-thin CuInSe{sub 2} devices. Annual subcontract report, November 10, 1992--November 9, 1993

    SciTech Connect (OSTI)

    Delahoy, A.E.; Britt, J.; Faras, F.; Kiss, Z.

    1994-09-01

    This report describes advances made during Phase II (November 10, 1992-November 9, 1993) of a three-phase, cost-shared subcontract whose ultimate goal is the demonstration of thin film CuInSe{sub 2} photovoltaic modules prepared by methods adaptable to safe, high yield, high volume manufacturing. At the end of Phase I, EPV became one of the first groups to clear the 10% efficiency barrier for CIS cells prepared by non-H{sub 2}Se selenization. During Phase II a total area efficiency of 12.5% was achieved for a 1 cm{sup 2} cell. The key achievement of Phase II was the production of square foot CIS modules without the use of H{sub 2}Se. This is seen as a crucial step towards the commercialization of CIS. Using a novel interconnect technology, EPV delivered an 8.0% aperture area efficiency mini-module and a 6.2% aperture area efficiency 720 cm{sub 2} module to NREL. On the processing side, advances were made in precursor formation and the selenization profile, both of which contributed to higher quality CIS. The higher band gap quaternary chalcopyrite material CuIn(S{sub x}, Se{sub 1{minus}X}){sub 2} was prepared and 8% cells were fabricated using this material. Device analysis revealed a correlation between long wavelength quantum efficiency and the CIS Cu/In ratio. Temperature dependent studies highlighted the need for high V{sub OC} devices to minimize the impact of the voltage drop at operating temperature. Numerical modeling of module performance was performed in order to identify the correct ZnO sheet resistance for modules. Efforts in Phase III will focus on increase of module efficiency to 9-10%, initiation of an outdoor testing program, preparation of completely uniform CIS plates using second generation selenization equipment, and exploration of alternative precursors for CIS formation.

  8. Persistent photoconductivity in two-dimensional Mo1-xW xSe2–MoSe2 van der Waals heterojunctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Puretzky, Alexander A.; Basile, Leonardo; Idrobo, Juan Carlos; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai; Li, Xufan; Lin, Ming -Wei; Wang, Kei

    2016-02-16

    Van der Waals (vdW) heterojunctions consisting of vertically-stacked individual or multiple layers of two-dimensional (2D) layered semiconductors, especially the transition metal dichalcogenides (TMDs), are fascinating new artificial solids just nanometers-thin that promise novel optoelectronic functionalities due to the sensitivity of their electronic and optical properties to strong quantum confinement and interfacial interactions. Here, monolayers of n-type MoSe2 and p-type Mo1-xW xSe2–MoSe2 are grown by vapor transport methods, then transferred and stamped to form artificial vdW heterostructures with different interlayer orientations. Atomic-resolution Z-contrast electron microscopy and electron diffraction are used to characterize both the individual monolayers and the atomic registry betweenmore » layers in the bilayer vdW heterostructures. These measurements are compared with photoluminescence and low-frequency Raman spectroscopy, which indicates strong interlayer coupling in heterostructures. Remarkably, the heterojunctions exhibit an unprecedented photoconductivity effect that persists at room temperature for several days. This persistent photoconductivity is shown to be tunable by applying a gate bias that equilibrates the charge distribution. Furthermore, these measurements indicate that such ultrathin vdW heterojunctions can function as rewritable optoelectronic switches or memory elements under time-dependent photo-illumination, an effect which appears promising for new monolayer TMDs-based optoelectronic devices applications.« less

  9. Search for New Phenomena in Dijet Angular Distributions in Proton-Proton Collisions at s = 8 TeV Measured with the ATLAS Detector

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Aad, G.; Abbott, B.; Abdallah, J.; Abdinov, O.; Aben, R.; Abolins, M.; AbouZeid, O. S.; Abramowicz, H.; Abreu, H.; Abreu, R.; et al

    2015-06-04

    A search for new phenomena in LHC proton-proton collisions at a center-of-mass energy of √s=8 TeV was performed with the ATLAS detector using an integrated luminosity of 17.3 fb⁻¹. The angular distributions are studied in events with at least two jets; the highest dijet mass observed is 5.5 TeV. All angular distributions are consistent with the predictions of the standard model. In a benchmark model of quark contact interactions, a compositeness scale below 8.1 TeV in a destructive interference scenario and 12.0 TeV in a constructive interference scenario is excluded at 95% C.L.; median expected limits are 8.9 TeV formore » the destructive interference scenario and 14.1 TeV for the constructive interference scenario.« less

  10. Material and detector properties of cadmium manganese telluride (Cd1-xMnxTe) crystals grown by the modified floating-zone method

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hossain, A.; Gu, G. D.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Roy, U. N.; Yang, G.; Liu, T.; Zhong, R.; Schneelock, J.; et al

    2014-12-24

    We demonstrated the material- and radiation-detection properties of cadmium manganese telluride (Cd1-xMnxTe; x=0.06), a wide-band-gap semiconductor crystal grown by the modified floating-zone method. We investigated the presence of various bulk defects, such as Te inclusions, twins, and dislocations of several as-grown indium-doped Cd1-xMnxTe crystals using different techniques, viz., IR transmission microscopy, and chemical etching. We then fabricated four planar detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Thus, our experimental results show that CMT crystals grown by the modified floating zone method apparently are free from Te inclusions. However,more » we still need to optimize our growth parameters to attain high-resistivity, large-volume single-crystal CdMnTe.« less

  11. Development of CdS/CdTe Tin Film Devices for St. Gobain Coated Glass: Cooperative Research and Development Final Report, CRADA Number CRD-08-317

    SciTech Connect (OSTI)

    Gessert, T.

    2012-04-01

    Research performed at NREL to produce CdS/CdTe devices on St. Gobain coated-glass material to establish a baseline CdS/CdTe device process and determine baseline device performance parameters on St. Gobain material. Performance of these baseline devices compared to similar devices produced by applying the established baseline CdS/CdTe process on alternative St. Gobain coated-glass materials.

  12. Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications

    DOE Patents [OSTI]

    Albin, David S.; Carapella, Jeffrey J.; Tuttle, John R.; Contreras, Miguel A.; Gabor, Andrew M.; Noufi, Rommel; Tennant, Andrew L.

    1995-07-25

    A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se.sub.2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550.degree. C.) at which Cu(In,Ga)Se.sub.2 is solid and Cu.sub.x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu.sub.x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu.sub.x (In,Ga).sub.y Se.sub.z. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se can be made by sequentially depositing or co-depositing the metal precursors, Cu and (In, Ga), on the substrate at room temperature, ramping up the thin-film temperature in the presence of Se overpressure to a moderate anneal temperature (about 450.degree. C.) and holding that temperature and the Se overpressure for an annealing period. A nonselenizing, low temperature anneal at about 100.degree. C. can also be used to homogenize the precursors on the substrates before the selenizing, moderate temperature anneal.

  13. Manufacturing Process Optimization to Improve Stability, Yield and Efficiency of CdS/CdTe PV Devices: Final Report, December 2004 - January 2009

    SciTech Connect (OSTI)

    Sampath, W. S.; Enzenroth, A.; Barth, K.

    2009-03-01

    The research by Colorado State University advances the understanding of device stability, efficiency, and process yield for CdTe PV devices.

  14. Novel Approaches to Wide Bandgap CuInSe2 Based Absorbers

    SciTech Connect (OSTI)

    William N. Shafarman

    2011-04-28

    This project targeted the development of high performance wide bandgap solar cells based on thin film alloys of CuInSe2 to relax constraints on module design and enable tandem solar cell structures. This addressed goals of the Solar Energy Technologies Program for Next Generation PV to develop technology needed for higher thin film module efficiency as a means to reduce costs. Specific objectives of the research project were: 1) to develop the processes and materials required to improve the performance of wide bandgap thin film solar cells based on alloys of CuInSe2, and 2) to provide the fundamental science and engineering basis for the material, electronic, and device properties required to effectively apply these processes and materials to commercial manufacture. CuInSe2-based photovoltaics have established the highest efficiencies of the thin film materials at both the cell and module scales and are actively being scaled up to commercialization. In the highest efficiency cells and modules, the optical bandgap, a function of the CuInSe2-based alloy composition, is relatively low compared to the optimum match to the solar spectrum. Wider bandgap alloys of CuInSe2 produce higher cell voltages which can improve module performance and enable the development of tandem solar cells to boost the overall efficiency. A focus for the project was alloying with silver to form (AgCu)(InGa)Se2 pentenary thin films deposited by elemental co-evaporation which gives the broadest range of control of composition and material properties. This alloy has a lower melting temperature than Ag-free, Cu-based chalcopyrite compounds, which may enable films to be formed with lower defect densities and the (AgCu)(InGa)Se2 films give improved material properties and better device performance with increasing bandgap. A comprehensive characterization of optical, structural, and electronic properties of (AgCu)(InGa)Se2 was completed over the complete compositional range 0 ≤ Ga/(In+Ga) ≤ 1 and 0 ≤ Ag/(Ag+Cu) ≤ 1. Evidence of improved material quality includes reduced sub-bandgap optical absorption, sharper bandtails, and increased grain size with Ag addition. The Ag alloying was shown to increase the range of bandgaps over which solar cells can be fabricated without any drop-off in performance. With bandgap greater than 1.6 eV, in the range needed for tandem solar cells, (AgCu)(InGa)Se2 gave higher efficiency than other CuInSe2-based alloys. Using a simple single-stage co-evaporation process, a solar cell with 17.6% efficiency using a film with bandgap = 1.3 eV was achieved, demonstrating the viability of (AgCu)(InGa)Se2 for high efficiency devices. With a three-stage co-evaporation process for (AgCu)(InGa)Se2 deposition a device with efficiency = 13.0 % and VOC = 890 mV with JSC = 20.5 mA/cm2, FF = 71.3% was achieved. This surpasses the performance of other wide bandgap CuInSe2-based solar cells. Detailed characterization of the electronic properties of the materials and devices including the application of advanced admittance-based easements was completed.

  15. RAPID TeV GAMMA-RAY FLARING OF BL LACERTAE

    SciTech Connect (OSTI)

    Arlen, T.; Aune, T.; Bouvier, A.; Beilicke, M.; Buckley, J. H.; Bugaev, V.; Dickherber, R.; Benbow, W.; Cesarini, A.; Connolly, M. P.; Ciupik, L.; Cui, W.; Feng, Q.; Finley, J. P.; Dumm, J.; Fortson, L.; Errando, M.; Falcone, A.; Federici, S.; Finnegan, G. E-mail: cui@purdue.edu; Collaboration: VERITAS Collaboration; and others

    2013-01-10

    We report on the detection of a very rapid TeV gamma-ray flare from BL Lacertae on 2011 June 28 with the Very Energetic Radiation Imaging Telescope Array System (VERITAS). The flaring activity was observed during a 34.6 minute exposure, when the integral flux above 200 GeV reached (3.4 {+-} 0.6) Multiplication-Sign 10{sup -6} photons m{sup -2} s{sup -1}, roughly 125% of the Crab Nebula flux measured by VERITAS. The light curve indicates that the observations missed the rising phase of the flare but covered a significant portion of the decaying phase. The exponential decay time was determined to be 13 {+-} 4 minutes, making it one of the most rapid gamma-ray flares seen from a TeV blazar. The gamma-ray spectrum of BL Lacertae during the flare was soft, with a photon index of 3.6 {+-} 0.4, which is in agreement with the measurement made previously by MAGIC in a lower flaring state. Contemporaneous radio observations of the source with the Very Long Baseline Array revealed the emergence of a new, superluminal component from the core around the time of the TeV gamma-ray flare, accompanied by changes in the optical polarization angle. Changes in flux also appear to have occurred at optical, UV, and GeV gamma-ray wavelengths at the time of the flare, although they are difficult to quantify precisely due to sparse coverage. A strong flare was seen at radio wavelengths roughly four months later, which might be related to the gamma-ray flaring activities. We discuss the implications of these multiwavelength results.

  16. Fermi level pinning in Fe-doped PbTe under pressure

    SciTech Connect (OSTI)

    Skipetrov, E. P. Kruleveckaya, O. V.; Skipetrova, L. A.; Slynko, E. I.; Slynko, V. E.

    2014-07-14

    We synthesize an iron-doped PbTe single-crystal ingot and investigate the phase and the elemental composition as well as galvanomagnetic properties in weak magnetic fields (4.2?K?T?300?K, B???0.07?T) of Pb{sub 1?y}Fe{sub y}Te alloys upon varying the iron content, at atmospheric pressure and under hydrostatic compression up to 10 kilobars. We find an increase of iron concentration along the length of the ingot and the appearance of microscopic inclusions enriched with iron in the heavily doped samples. Lightly doped alloys are characterized by the p-type metal conductivity. An increase of the iron impurity content leads to a decrease in the free hole concentration, a stabilization of galvanomagnetic parameters, indicating the pinning of the Fermi energy by the iron resonant impurity level lying under the bottom of the valence band, and to the p-n inversion of the conductivity type. Under pressure, the free hole concentration in the sample, in which the stabilization of galvanomagnetic parameters takes place, increases by approximately a factor of four due to the flow of electrons from the valence band to the iron-induced resonant level. Using the two-band Kane and the six-band Dimmock dispersion relations, the pressure dependence of the Fermi energy is calculated. The model of the electronic structure rearrangement of Pb{sub 1?y}Fe{sub y}Te under pressure is proposed. The energy position and the pressure coefficient of the resonant iron impurity level are determined.

  17. Electronic structure, irreversibility line and magnetoresistance of Cu0.3Bi2Se3 superconductor

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hemian, Yi; Gu, Genda; Chen, Chao -Yu; Sun, Xuan; Xie, Zhuo -Jin; Feng, Ya; Liang, Ai -Ji; Peng, Ying -Ying; He, Shao -Long; Zhao, Lin; et al

    2015-06-01

    CuxBi2Se3 is a superconductor that is a potential candidate for topological superconductors. We report our laser-based angle-resolved photoemission measurement on the electronic structure of the CuxBi2Se3 superconductor, and a detailed magneto-resistance measurement in both normal and superconducting states. We find that the topological surface state of the pristine Bi2Se3 topological insulator remains robust after the Cu-intercalation, while the Dirac cone location moves downward due to electron doping. Detailed measurements on the magnetic field-dependence of the resistance in the superconducting state establishes an irreversibility line and gives a value of the upper critical field at zero temperature of ~4000 Oe formore » the Cu0.3Bi2Se3 superconductor with a middle point Tc of 1.9K. The relation between the upper critical field Hc2 and temperature T is different from the usual scaling relation found in cuprates and in other kinds of superconductors. Small positive magneto-resistance is observed in Cu0.3Bi2Se3 superconductors up to room temperature. As a result, these observations provide useful information for further study of this possible candidate for topological superconductors.« less

  18. In-situ surface composition measurements of CuGaSe{sub 2} thin films

    SciTech Connect (OSTI)

    Fons, P.; Yamada, A.; Niki, S.; Oyanagi, H.

    1998-12-31

    Two CuGaSe{sub 2} films were grown by molecular beam epitaxy onto GaAs (001) substrates with varying Cu/Ga flux ratios under Se overpressure conditions. Growth was interrupted at predetermined times and the surface composition was measured using Auger electron spectroscopy after which growth was continued. After growth, the film composition was analyzed using voltage dependent electron microprobe spectroscopy. Film structure and morphology were also analyzed using x-ray diffraction and atomic force microscopy. The film with a Cu/Ga ratio larger than unity showed evidence of surface segregation of a second Cu-rich phase with a Cu/Se composition ratio slightly greater than unity. A second CuGaSe{sub 2} film with a Cu/Ga ratio of less than unity showed no change in surface composition with time and was also consistent with bulk composition measurements. Diffraction measurements indicated a high concentration of twins as well as the presence of domains with mixed c and a axes in the Ga-rich film. The Cu-rich films by contrast were single domain and had a narrower mosaics. High sensitivity scans along the [001] reciprocal axis did not exhibit any new peaks not attributable to either the substrate or the CuGaSe{sub 2} thin film.

  19. Morphology, electrical, and optical properties of heavily doped ZnTe:Cu thin films

    SciTech Connect (OSTI)

    El Akkad, Fikry; Abdulraheem, Yaser

    2013-11-14

    We report on a study of the physical properties of ZnTe:Cu films with Cu content up to ∼12 at. % prepared using rf magnetron sputtering. The composition and lateral homogeneities are studied using X-ray photoelectron spectroscopy (XPS). Atomic force microscopy measurements on films deposited at different substrate temperatures (up to 325 °C) yielded activation energy of 12 kJ/mole for the grains growth. The results of XPS and electrical and optical measurements provide evidence for the formation of the ternary zinc copper telluride alloy in films containing Cu concentration above ∼4 at. %. The XPS results suggest that copper is incorporated in the alloy with oxidation state Cu{sup 1+} so that the alloy formula can be written Zn{sub 1−y}Cu{sub y} Te with y = 2−x, where x is a parameter measuring the stoichiometry in the Cu site. The formation of this alloy causes appreciable shift in the binding energies of the XPS peaks besides an IR shift in the energy band gap. Detailed analysis of the optical absorption data revealed the presence of two additional transitions, besides the band gap one, originating from the Γ{sub 8} and Γ{sub 7} (spin-orbit) valence bands to a donor level at ∼0.34 eV below the Γ{sub 6} conduction band. This interpretation yields a value for the valence band splitting energy Δ≅ 0.87 eV independent of copper concentration. On the other hand, the mechanism of formation of the alloy is tentatively explained in terms of a point defect reaction in which substitutional Cu defect Cu{sub Zn} is also created. Assuming that substitutional Cu is the dominant acceptor in the Zn rich alloy as in ZnTe, its formation energy was determined to be 1.7 eV close to the theoretical value (1.41 eV) in ZnTe.

  20. Ab initio study of the structural, electronic and optical properties of ZnTe compound

    SciTech Connect (OSTI)

    Bahloul, B.; Deghfel, B.; Amirouche, L.; Bounab, S.; Bentabet, A.; Bouhadda, Y.; Fenineche, N.

    2015-03-30

    Structural, electronic and optical properties of ZnTe compound were calculated using Density Functional Theory (DFT) based on the pseudopotentials and planewaves (PP-PW) method as implemented in the ABINIT computer code, where the exchangecorrelation functional is approximated using the local density approximation (LDA) and the generalized gradient approximation (GGA). The obtained results from either LDA or GGa calculation for lattice parameter, energy band gap and optical parameters, such as the fundamental absorption edge, the peaks observed in the imaginary part of the dielectric function, the macroscopic dielectric constants and the optical dielectric constant, are compared with the available theoretical results and experimental data.

  1. Experimental investigation of spin-orbit coupling in n-type PbTe quantum wells

    SciTech Connect (OSTI)

    Peres, M. L.; Monteiro, H. S.; Castro, S. de; Chitta, V. A.; Oliveira, N. F.; Mengui, U. A.; Rappl, P. H. O.; Abramof, E.; Maude, D. K.

    2014-03-07

    The spin-orbit coupling is studied experimentally in two PbTe quantum wells by means of weak antilocalization effect. Using the Hikami-Larkin-Nagaoka model through a computational global optimization procedure, we extracted the spin-orbit and inelastic scattering times and estimated the strength of the zero field spin-splitting energy ?{sub so}. The values of ?{sub so} are linearly dependent on the Fermi wave vector (k{sub F}) confirming theoretical predictions of the existence of large spin-orbit coupling in IV-VI quantum wells originated from pure Rashba effect.

  2. Heavy Higgs bosons and the 2 TeV $W'$ boson

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dobrescu, Bogdan A.; Liu, Zhen

    2015-10-19

    The hints from the LHC for the existence of a W' boson of mass around 1.9 TeV point towards a certain SU(2) L × SU(2) R × U(1) B-L gauge theory with an extended Higgs sector. We show that the decays of the W' boson into heavy Higgs bosons have sizable branching fractions. Interpreting the ATLAS excess events in the search for same-sign lepton pairs plus b jets as arising from W' cascade decays, we then estimate that the masses of the heavy Higgs bosons are in the 400-700 GeV range.

  3. Quantum Anomalous Hall Effect in Hg_1-yMn_yTe Quantum Wells

    SciTech Connect (OSTI)

    Liu, Chao-Xing; Qi, Xiao-Liang; Dai, Xi; Fang, Zhong; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-03-19

    The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum anomalous Hall effect, can be realized in Hg{sub 1-y}Mn{sub y}Te quantum wells, without the external magnetic field and the associated Landau levels. This effect arises purely from the spin polarization of the Mn atoms, and the quantized Hall conductance is predicted for a range of quantum well thickness and the concentration of the Mn atoms. This effect enables dissipationless charge current in spintronics devices.

  4. Charge ordering in stoichiometric FeTe: Scanning tunneling microscopy and spectroscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Wei; Yin, Wei -Guo; Wang, Lili; He, Ke; Ma, Xucun; Xue, Qi -Kun; Chen, Xi

    2016-01-04

    In this study, we use scanning tunneling microscopy and spectroscopy to reveal a unique stripy charge order in a parent phase of iron-based superconductors in stoichiometric FeTe epitaxy films. The charge order has unusually the same—usually half—period as the spin order. We also found highly anisotropic electron band dispersions being large and little along the ferromagnetic (crystallographic b) and antiferromagnetic (a) directions, respectively. Our data suggest that the microscopic mechanism is likely of the Stoner type driven by interatomic Coulomb repulsion Vij, and that Vij and charge fluctuations, so far much neglected, are important to the understanding of iron-based superconductors.

  5. Conductive atomic force microscopy study of local electronic transport in ZnTe thin films

    SciTech Connect (OSTI)

    Kshirsagar, Sachin D.; Krishna, M. Ghanashyam; Tewari, Surya P.

    2013-02-05

    ZnTe thin films obtained by the electron beam evaporation technique were subjected to thermal annealing at 500 Degree-Sign C for 2 hours. The as deposited films were amorphous but transformed to the crystalline state under influence of the thermal treatment. There is increase in optical absorption due to the heat treatment caused by increase in free carrier concentration. Conductive atomic force microscopy shows the presence of electronic inhomogeneities in the films. This is attributed to local compositional variations in the films. I-V analysis in these systems indicates formation of Schottky junction at the metal semiconductor (M-S) interface.

  6. Quantum Hall effect in HgTe quantum wells at nitrogen temperatures

    SciTech Connect (OSTI)

    Kozlov, D. A. Kvon, Z. D.; Mikhailov, N. N.; Dvoretskii, S. A.; Weishupl, S.; Krupko, Y.; Portal, J.-C.

    2014-09-29

    We report on the observation of quantized Hall plateaus in a system of two-dimensional Dirac fermions, implemented in a 6.6?nm HgTe quantum well at magnetic fields up to 34?T at nitrogen temperatures. The activation energies determined from the temperature dependence of the longitudinal resistivity are found to be almost equal for the filling factors ? of 1 and 2. This indicates that the large values of the g-factor (about 3040) remain unchanged at very strong magnetic fields.

  7. Core-shell ITO/ZnO/CdS/CdTe nanowire solar cells

    SciTech Connect (OSTI)

    Williams, B. L.; Phillips, L.; Major, J. D.; Durose, K.; Taylor, A. A.; Mendis, B. G.; Bowen, L.

    2014-02-03

    Radial p-n junction nanowire (NW) solar cells with high densities of CdTe NWs coated with indium tin oxide (ITO)/ZnO/CdS triple shells were grown with excellent heterointerfaces. The optical reflectance of the devices was lower than for equivalent planar films by a factor of 100. The best efficiency for the NW solar cells was ??=?2.49%, with current transport being dominated by recombination, and the conversion efficiencies being limited by a back contact barrier (?{sub B}?=?0.52?eV) and low shunt resistances (R{sub SH}?

  8. TeV-scale gauged B-L symmetry with inverse seesaw mechanism

    SciTech Connect (OSTI)

    Khalil, Shaaban

    2010-10-01

    We propose a modified version of the TeV-scale B-L extension of the standard model, where neutrino masses are generated through the inverse seesaw mechanism. We show that heavy neutrinos in this model can be accessible via clean signals at the LHC. The search for the extra gauge boson Z{sub B-L}{sup '} through the decay into dileptons or two dileptons plus missing energy is studied. We also show that the B-L extra Higgs boson can be directly probed at the LHC via a clean dilepton and missing energy signal.

  9. High thermal stability Sb{sub 3}Te-TiN{sub 2} material for phase change memory application

    SciTech Connect (OSTI)

    Ji, Xinglong; Zhou, Wangyang; Wu, Liangcai Zhu, Min; Rao, Feng; Song, Zhitang; Cao, Liangliang; Feng, Songlin

    2015-01-12

    For phase change memory (PCM) applications, it has been widely accepted that δ phase Sb-Te has fast operation speed and good phase stability. However, the fast growth crystallization mechanism will cause poor amorphous phase stability and overlarge grain size. We introduce TiN{sub 2} into δ phase Sb-Te (Sb{sub 3}Te) to enhance the amorphous thermal stability and refine the grain size. With TiN{sub 2} incorporating, the temperature for 10-year data retention increases from 79 °C to 124 °C. And the grain size decreases to dozens of nanometers scale. Based on X-ray photoelectron spectroscopy and transmission electron microscopy results, we knew that nitrogen atoms bond with titanium, forming disorder region at the grain boundary of Sb{sub 3}Te-TiN{sub 2} (STTN). Thus, STTN has a quite different crystallization mechanism from Sb{sub 3}Te. Furthermore, PCM device based on STTN can realize reversible phase change under 20 ns electrical pulse.

  10. Towards a predictive route for selection of doping elements for the thermoelectric compound PbTe from first-principles

    SciTech Connect (OSTI)

    Joseph, Elad; Amouyal, Yaron

    2015-05-07

    Striving for improvements of the thermoelectric (TE) properties of the technologically important lead telluride (PbTe) compound, we investigate the influence of different doping elements on the thermal conductivity, Seebeck coefficient, and electrical conductivity applying density functional theory calculations. Our approach combines total-energy calculations yielding lattice vibrational properties with the Boltzmann transport theory to obtain electronic transport properties. We find that doping with elements from the 1st and 3rd columns of the periodic table reduces the sound velocity and, consequently, the lattice thermal conductivity, while 2nd column dopants have no such influence. Furthermore, 1.6 at.?% doping with 4th and 5th column elements provides the highest reduction of lattice thermal conductivity. Out of this group, Hf doping results in maximum reduction of the sound velocity from 2030?m s{sup ?1} for pure PbTe to 1370?m s{sup ?1}, which is equivalent to ca. 32% reduction of lattice thermal conductivity. The highest power factor values calculated for 1.6 at.?% doping range between 40 and 56??W cm{sup ?1} K{sup ?2}, and are obtained for substitution with dopants having the same valence as Pb or Te, such as those located at the 2nd, 14th, and 16th columns of the periodic table. We demonstrate how this method may be generalized for dopant-selection-oriented materials design aimed at improving TE performance of other compounds.

  11. Fabrication and Spark plasma sintering of nanostructured bismuth telluride (Bi{sub 2}Te{sub 3})

    SciTech Connect (OSTI)

    Saleemi, Mohsin; Toprak, Muhammet S.; Li, Shanghua; Johnsson, Mats; Muhammed, Mamoun

    2012-06-26

    Thermoelectric (TE) devices can harvest residual low-grade waste heat energy. Bismuth telluride (Bi{sub 2}Te{sub 3}) and its alloys are mostly used TE materials in the bulk form for making TE modules. We report a simple, fast and very high yield synthetic process for the bulk Bi{sub 2}Te{sub 3} nanopowders with hexagonal plate like morphology. Spark plasma sintering (SPS) process has been optimized in order to preserve nanostructure while achieving a high compaction density of the pellets. Electron microscopy analysis was used to determine the effect of SPS parameters during compaction on the grain growth. Optimal conditions for the fabricated nanopowder was determined as 673 K, 70 MPa pressure with no holding time, which resulted in average lateral grain size in the range of 165-190 nm for a compact density of 98%. About 50% reduction of thermal conductivity was observed as compared to its bulk counterparts, revealing the feasibility of suggested route in the preservation of nanostructure and enhanced phonon scattering.

  12. High Resolution Dopant Profiles Revealed by Atom Probe Tomography and STEM-EBIC for CdTe Based Solar Cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Poplawsky, Jonathan D.; Li, Chen; Paudel, Naba; Guo, Wei; Yan, Yanfa; Pennycook, Stephen J.

    2016-01-01

    Segregated elements and their diffusion profiles within grain boundaries and interfaces resulting from post deposition heat treatments are revealed using atom probe tomography (APT), scanning transmission electron microscopy (STEM), and electron beam induced current (EBIC) techniques. The results demonstrate how these techniques complement each other to provide conclusive evidence for locations of space charge regions and mechanisms that create them at the nanoscale. Most importantly, a Cl dopant profile that extends ~5 nm into CdTe grains interfacing the CdS is shown using APT and STEM synergy, which has been shown to push the pn-junction into the CdTe layer indicative ofmore » a homojunction (revealed by STEM EBIC). In addition, Cu and Cl concentrations within grain boundaries within several nms and µms from the CdS/CdTe interface are compared, Na segregation of <0.1% is detected, and S variations of ~1–3% are witnessed between CdTe grains close to the CdS/CdTe interface. The segregation and diffusion of these elements directly impacts on the material properties, such as band gap energy and n/p type properties. Optimization of the interfacial and grain boundary doping will lead to higher efficiency solar cells.« less

  13. High Resolution Dopant Profiles Revealed by Atom Probe Tomography and STEM-EBIC for CdTe Based Solar Cells

    SciTech Connect (OSTI)

    Poplawsky, Jonathan D.; Li, Chen; Paudel, Naba; Guo, Wei; Yan, Yanfa; Pennycook, Stephen J.

    2016-01-01

    Segregated elements and their diffusion profiles within grain boundaries and interfaces resulting from post deposition heat treatments are revealed using atom probe tomography (APT), scanning transmission electron microscopy (STEM), and electron beam induced current (EBIC) techniques. The results demonstrate how these techniques complement each other to provide conclusive evidence for locations of space charge regions and mechanisms that create them at the nanoscale. Most importantly, a Cl dopant profile that extends ~5 nm into CdTe grains interfacing the CdS is shown using APT and STEM synergy, which has been shown to push the pn-junction into the CdTe layer indicative of a homojunction (revealed by STEM EBIC). In addition, Cu and Cl concentrations within grain boundaries within several nms and µms from the CdS/CdTe interface are compared, Na segregation of <0.1% is detected, and S variations of ~1–3% are witnessed between CdTe grains close to the CdS/CdTe interface. The segregation and diffusion of these elements directly impacts on the material properties, such as band gap energy and n/p type properties. Optimization of the interfacial and grain boundary doping will lead to higher efficiency solar cells.

  14. Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells

    DOE Patents [OSTI]

    Noufi, R.; Gabor, A.M.; Tuttle, J.R.; Tennant, A.L.; Contreras, M.A.; Albin, D.S.; Carapella, J.J.

    1995-08-15

    A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S){sub 2} comprises depositing a first layer of (In,Ga){sub x} (Se,S){sub y} followed by depositing just enough Cu+(Se,S) or Cu{sub x} (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga){sub x} (Se,S){sub y} is deposited first, followed by deposition of all the Cu+(Se,S) or Cu{sub x} (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu{sub x} (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga){sub x} (Se,S){sub y} to go slightly Cu-poor in the final Cu(In,Ga)(Se,S){sub 2} thin film. 5 figs.

  15. Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells

    DOE Patents [OSTI]

    Noufi, Rommel; Gabor, Andrew M.; Tuttle, John R.; Tennant, Andrew L.; Contreras, Miguel A.; Albin, David S.; Carapella, Jeffrey J.

    1995-01-01

    A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.2 thin film.

  16. Charge-transfer dynamics in multilayered PbS and PbSe quantum dot architectures

    SciTech Connect (OSTI)

    Xu, F.; Ma, X.; Haughn, C. R.; Doty, M. F.; Cloutier, S. G.

    2014-02-03

    We demonstrate control of the charge transfer process in PbS and PbSe quantum dot assemblies. We first demonstrate efficient charge transfer from donor quantum dots to acceptor quantum dots in a multi-layer PbSe cascade structure. Then, we assemble type-I and type-II heterostructures using both PbS and PbSe quantum dots via careful control of the band alignment. In type-I structures, photo-generated carriers are transferred and localized in the smaller bandgap (acceptor) quantum dots, resulting in a significant luminescence enhancement. In contrast, a significant luminescence quenching and shorter emission lifetime confirms an efficient separation of photo-generated carriers in the type-II architecture.

  17. Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix

    SciTech Connect (OSTI)

    Gruzintsev, A. N. Emelchenko, G. A.; Masalov, V. M.; Yakimov, E. E.; Barthou, C.; Maitre, A.

    2009-02-15

    The effect of the photonic band gap in the photonic crystal, the synthesized SiO{sub 2} opal with embedded CdSe/ZnS quantum dots, on its luminescence in the visible spectral region is studied. It is shown that the position of the photonic band gap in the luminescence and reflectance spectra for the infiltrated opal depends on the diameter of the constituent nanospheres and on the angle of recording the signal. The optimal conditions for embedding the CdSe/ZnS quantum dots from the solution into the opal matrix are determined. It is found that, for the opal-CdSe/ZnS nanocomposites, the emission intensity decreases and the luminescence decay time increases in the spatial directions, in which the spectral positions of the photonic band gap and the luminescence peak of the quantum dots coincide.

  18. A Novel and Functional Single Layer Sheet of ZnSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhou, Jia; Sumpter, Bobby G; Kent, Paul R; Huang, Jingsong

    2015-01-01

    In this Communication, we report a novel singlelayer sheet of ZnSe, with a three-atomic thickness, which demonstrates a strong quantum confinement effect by exhibiting a large blue shift of 2.0 eV in its absorption edge relative to the zinc blende (ZB) bulk phase. Theoretical optical absorbance shows that the largest absorption of this ultrathin single-layer sheet of ZnSe occurs at a wavelength similar to its four-atom-thick doublelayer counterpart but with higher photoabsorption efficiency, suggesting a superior behavior on incident photon-to-current conversion efficiency for solar water splitting, among other potential applications. The results presented herein for ZnSe may be generalized tomore » other group II-VI analogues.« less

  19. Two-step growth of two-dimensional WSe2/MoSe2 heterostructures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gong, Yongji; Lei, Sidong; Lou, Jun; Liu, Zheng; Vajtai, Robert; Zhou, Wu; Ajayan, Pullikel M.

    2015-08-03

    Two dimensional (2D) materials have attracted great attention due to their unique properties and atomic thickness. Although various 2D materials have been successfully synthesized with different optical and electrical properties, a strategy for fabricating 2D heterostructures must be developed in order to construct more complicated devices for practical applications. Here we demonstrate for the first time a two-step chemical vapor deposition (CVD) method for growing transition-metal dichalcogenide (TMD) heterostructures, where MoSe2 was synthesized first and followed by an epitaxial growth of WSe2 on the edge and on the top surface of MoSe2. Compared to previously reported one-step growth methods, thismore » two-step growth has the capability of spatial and size control of each 2D component, leading to much larger (up to 169 μm) heterostructure size, and cross-contamination can be effectively minimized. Furthermore, this two-step growth produces well-defined 2H and 3R stacking in the WSe2/MoSe2 bilayer regions and much sharper in-plane interfaces than the previously reported MoSe2/WSe2 heterojunctions obtained from one-step growth methods. The resultant heterostructures with WSe2/MoSe2 bilayer and the exposed MoSe2 monolayer display rectification characteristics of a p-n junction, as revealed by optoelectronic tests, and an internal quantum efficiency of 91% when functioning as a photodetector. As a result, a photovoltaic effect without any external gates was observed, showing incident photon to converted electron (IPCE) efficiencies of approximately 0.12%, providing application potential in electronics and energy harvesting.« less

  20. Direct Observation of Energy-Gap Scaling Law in CdSe Quantum Dots with Positrons

    SciTech Connect (OSTI)

    Denison, Arthur Blanchard; Weber, M. H.; Lynn, K. G.; Barbiellini, B.; Sterne, P. A.

    2002-07-01

    CdSe quantum dot samples with sizes in the range of 1.8~6 nm in diameter were examined by positron annihilation spectroscopy. The results were compared to data obtained for single-crystal bulk CdSe. Evidence is provided that the positrons annihilate within the nanospheres. The annihilation line shape shows a smearing at the boundary of the Jones zone proportional to the widening of the band gap due to a reduction in the size of the quantum dots. The data confirm that the change in the band gap is inversely proportional to the square of the quantum dot diameter.

  1. Tuning thermoelectricity in a Bi2Se3 topological insulator via varied film thickness

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Guo, Minghua; Wang, Zhenyu; Xu, Yong; Huang, Huaqing; Zang, Yunyi; Liu, Chang; Duan, Wenhui; Gan, Zhongxue; Zhang, Shou-Cheng; He, Ke; et al

    2016-01-12

    We report thermoelectric transport studies on Bi2Se3 topological insulator thin films with varied thickness grown by molecular beam epitaxy. We find that the Seebeck coefficient and thermoelectric power factor decrease systematically with the reduction of film thickness. These experimental observations can be explained quantitatively by theoretical calculations based on realistic electronic band structure of the Bi2Se3 thin films. Lastly, this work illustrates the crucial role played by the topological surface states on the thermoelectric transport of topological insulators, and sheds new light on further improvement of their thermoelectric performance.

  2. Thickness-dependent coherent phonon frequency in ultrathin FeSe/SrTiO3

    Office of Scientific and Technical Information (OSTI)

    films (Journal Article) | SciTech Connect Thickness-dependent coherent phonon frequency in ultrathin FeSe/SrTiO3 films Citation Details In-Document Search Title: Thickness-dependent coherent phonon frequency in ultrathin FeSe/SrTiO3 films × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information

  3. Ordering mechanism of stacked CdSe/ZnS{sub x}Se{sub 1-x} quantum dots: A combined reciprocal-space and real-space approach

    SciTech Connect (OSTI)

    Schmidt, Th.; Roventa, E.; Clausen, T.; Flege, J. I.; Alexe, G.; Rosenauer, A.; Hommel, D.; Falta, J.; Bernstorff, S.; Kuebel, C.

    2005-11-15

    The vertical and lateral ordering of stacked CdSe quantum dot layers embedded in ZnS{sub x}Se{sub 1-x} has been investigated by means of grazing incidence small angle x-ray scattering and transmission electron microscopy. Different growth parameters have been varied in order to elucidate the mechanisms leading to quantum dot correlation. From the results obtained for different numbers of quantum dot layers, we conclude on a self-organized process which leads to increasing ordering for progressive stacking. The dependence on the spacer layer thickness indicates that strain induced by lattice mismatch drives the ordering process, which starts to break down for too thick spacer layers in a thickness range from 45 to 80 A. Typical quantum dot distances in a range from about 110 to 160 A have been found. A pronounced anisotropy of the quantum dot correlation has been observed, with the strongest ordering along the [110] direction. Since an increased ordering is found with increasing growth temperature, the formation of stacking faults as an additional mechanism for quantum dot alignment can be ruled out.

  4. Search for Quark Compositeness with the Dijet Centrality Ratio in $pp$ Collisions at $\\sqrt{s}=7$ TeV

    SciTech Connect (OSTI)

    Khachatryan, Vardan; et al.

    2010-12-01

    A search for quark compositeness in the form of quark contact interactions, based on hadronic jet pairs (dijets) produced in proton-proton collisions at sqrt(s)=7 TeV, is described. The data sample of the study corresponds to an integrated luminosity of 2.9 inverse picobarns collected with the CMS detector at the LHC. The dijet centrality ratio, which quantifies the angular distribution of the dijets, is measured as a function of the invariant mass of the dijet system and is found to agree with the predictions of the Standard Model. A statistical analysis of the data provides a lower limit on the energy scale of quark contact interactions. The sensitivity of the analysis is such that the expected limit is 2.9 TeV; because the observed value of the centrality ratio at high invariant mass is below the expectation, the observed limit is 4.0 TeV at the 95% confidence level.

  5. Reduction of surface leakage current by surface passivation of CdZn Te and other materials using hyperthermal oxygen atoms

    DOE Patents [OSTI]

    Hoffbauer, Mark A.; Prettyman, Thomas H.

    2001-01-01

    Reduction of surface leakage current by surface passivation of Cd.sub.1-x Zn.sub.x Te and other materials using hyperthermal oxygen atoms. Surface effects are important in the performance of CdZnTe room-temperature radiation detectors used as spectrometers since the dark current is often dominated by surface leakage. A process using high-kinetic-energy, neutral oxygen atoms (.about.3 eV) to treat the surface of CdZnTe detectors at or near ambient temperatures is described. Improvements in detector performance include significantly reduced leakage current which results in lower detector noise and greater energy resolution for radiation measurements of gamma- and X-rays, thereby increasing the accuracy and sensitivity of measurements of radionuclides having complex gamma-ray spectra, including special nuclear materials.

  6. Microstructures, magnetic and electric properties of diluted magnetic semiconductors InTe{sub 1?x} Fe{sub x} (Co{sub x})

    SciTech Connect (OSTI)

    El-Sayed, Karimat; Sedeek, K.; Heiba, Z.K.; Hantour, H.H.

    2013-06-01

    Highlights: ? The prepared InTe{sub 0.9}Fe{sub 0.1} was found to be ferromagnetic at room temperature and can be characterized as diluted magnetic semiconductors. ? The presence of staking faults, various types of defects, strained lattice, grain boundaries and the impurity of minor non-magnetic phase were suggested to participate in high temperature ferromagnetism. - Abstract: InTe compound doped by 10% of Fe or Co respectively was synthesized. X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope (SEM), energy dispersive X-ray (EDX), vibrating sample magnetometer (VSM) and Kiethley electrometer were used for characterizing the prepared samples. XRD show the presence of InTe{sub 0.9}Fe{sub 0.1} or InTe{sub 0.9}Co{sub 0.1} together with minor In{sub 4}Te{sub 3} phase. InTe{sub 0.9}Fe{sub 0.1} is ferromagnetic with high Curie and high blocking temperature, while InTe{sub 0.9}Co{sub 0.1} is antiferromagnetic with two high Neels temperatures. ?RT of InTe{sub 0.9}Fe{sub 0.1} and InTe{sub 0.9}Co{sub 0.1} are greater than those of InTe. The higher conductivity is due to the higher carrier's density obtained from the interaction of the sp-d orbitals, of the electric and magnetic system. The presence of In{sub 4}Te{sub 3} minor phase and different kinds of defects are taking major roles in the formation of high Tc ferromagnetism and antiferromagnetism.

  7. Magnetic Correlations in the Quasi-2D Semiconducting Ferromagnet CrSiTe3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Williams, Travis J.; Aczel, Adam A.; Lumsden, Mark D.; Nagler, Stephen E.; Stone, Matthew B.; Yan, Jiaqiang; Mandrus, D.

    2015-10-02

    Intrinsic, two-dimensional ferromagnetic semiconductors are an important class of materials for overcoming the limitations of dilute magnetic semiconductors for spintronics applications. CrSiTe3 is a particularly interesting member of this class, since it can likely be exfoliated down to single layers, where Tc is predicted to increase dramatically. Establishing the nature of the magnetism in the bulk is a necessary precursor to understanding the magnetic behavior in thin film samples and the possible applications of this material. In this work, we use elastic and inelastic neutron scattering to measure the magnetic properties of single crystalline CrSiTe3. We find that there ismorea very small single ion anisotropy favoring magnetic ordering along the c-axis and that the measured spin waves fit well to a model where the moments are only weakly coupled along that direction. Finally, we find that both static and dynamic correlations persist within the ab-plane up to at least 300 K, strong evidence of this material's two-dimensional characteristics that are relevant for future studies on thin film and monolayer samples.less

  8. Nanosecond laser-induced phase transitions in pulsed laser deposition-deposited GeTe films

    SciTech Connect (OSTI)

    Sun, Xinxing Thelander, Erik; Lorenz, Pierre; Gerlach, Jürgen W.; Decker, Ulrich; Rauschenbach, Bernd

    2014-10-07

    Phase transformations between amorphous and crystalline states induced by irradiation of pulsed laser deposition grown GeTe thin films with nanosecond laser pulses at 248 nm and pulse duration of 20 ns are studied. Structural and optical properties of the Ge-Te phase-change films were studied by X-ray diffraction and optical reflectivity measurements as a function of the number of laser pulses between 0 and 30 pulses and of the laser fluence up to 195 mJ/cm². A reversible phase transition by using pulse numbers ≥ 5 at a fluence above the threshold fluence between 11 and 14 mJ/cm² for crystallization and single pulses at a fluence between 162 and 182 mJ/cm² for amorphization could be proved. For laser fluences from 36 up to 130 mJ/cm², a high optical contrast of 14.7% between the amorphous and crystalline state is measured. A simple model is used that allows the discussion on the distribution of temperature in dependency on the laser fluence.

  9. Experimental observation of spin-dependent electron many-body effects in CdTe

    SciTech Connect (OSTI)

    Horodysk, P.; N?mec, P. Novotn, T.; Trojnek, F.; Mal, P.

    2014-08-07

    In semiconductors, the spin degree of freedom is usually disregarded in the theoretical treatment of electron many-body effects such as band-gap renormalization and screening of the Coulomb enhancement factor. Nevertheless, as was observed experimentally in GaAs, not only the single-particle phase-space filling but also many-body effects are spin sensitive. In this paper, we report on time- and polarization-resolved differential transmission pump-probe measurements in CdTe, which has the same zincblende crystal structure but different material parameters compared to that of GaAs. We show experimentally that at room temperature in CdTeunlike in GaAsthe pump-induced decrease of transmission due to the band-gap renormalization can even exceed the transmission increase due to the phase-space filling, which enables to measure directly the spin-sensitivity of the band-gap renormalization. We also observed that the influence of the band-gap renormalization is more prominent at low temperatures.

  10. Hidden extra U(1) at the electroweak/TeV scale

    SciTech Connect (OSTI)

    Grossmann, B. N.; Rai, Santosh Kumar; McElrath, B.; Nandi, S.

    2010-09-01

    We propose a simple extension of the standard model (SM) by adding an extra U(1) symmetry which is hidden from the SM sector. Such a hidden U(1) has not been considered before, and its existence at the TeV scale can be explored at the LHC. This hidden U(1) does not couple directly to the SM particles, and couples only to new SU(2){sub L} singlet exotic quarks and singlet Higgs bosons, and is broken at the TeV scale. The dominant signals at the high-energy hadron colliders are multilepton and multi-b-jet final states with or without missing energy. We calculate the signal rates as well as the corresponding standard model background for these final states. A very distinctive signal is 6 high p{sub T} b-jets in the final state with no missing energy. For a wide range of the exotic quarks masses the signals are observable above the background at the LHC.

  11. Nanoscale imaging of photocurrent and efficiency in CdTe solar cells

    SciTech Connect (OSTI)

    Leite, Marina S.; Abashin, Maxim; Lezec, Henri J.; Gianfrancesco, Anthony; Talin, A. Alec; Zhitenev, Nikolai B.

    2014-10-15

    The local collection characteristics of grain interiors and grain boundaries in thin film CdTe polycrystalline solar cells are investigated using scanning photocurrent microscopy. The carriers are locally generated by light injected through a small aperture (50-300 nm) of a near-field scanning optical microscope in an illumination mode. Possible influence of rough surface topography on light coupling is examined and eliminated by sculpting smooth wedges on the granular CdTe surface. By varying the wavelength of light, nanoscale spatial variations in external quantum efficiency are mapped. We find that the grain boundaries (GBs) are better current collectors than the grain interiors (GIs). The increased collection efficiency is caused by two distinct effects associated with the material composition of GBs. First, GBs are charged, and the corresponding built-in field facilitates the separation and the extraction of the photogenerated carriers. Second, the GB regions generate more photocurrent at long wavelength corresponding to the band edge, which can be caused by a smaller local band gap. As a result, resolving carrier collection with nanoscale resolution in solar cell materials is crucial for optimizing the polycrystalline device performance through appropriate thermal processing and passivation of defect and surfaces.

  12. Study of the effect of the stress on CdTe nuclear detectors

    SciTech Connect (OSTI)

    Ayoub, M.; Radley, I.; Mullins, J. T.; Hage-Ali, M.

    2013-09-14

    CdTe detectors are commonly used for X and ? ray applications. The performance of these detectors is strongly affected by different types of mechanical stress; such as that caused by differential expansion between the semiconductor and its intimate metallic contacts and that caused by applied pressure during the bonding process. The aim of this work was to study the effects of stress on the performance of CdTe detectors. A difference in expansion coefficients induces transverse stress under the metallic contact, while contact pressure induces longitudinal stress. These stresses have been simulated by applying known static pressures. For the longitudinal case, the pressure was applied directly to the metallic contact; while in the transverse case, it was applied to the side. We have studied the effect of longitudinal and transverse stresses on the electrical characteristics including leakage current measurements and ?-ray detection performance. We have also investigated induced defects, their nature, activation energies, cross sections, and concentrations under the applied stress by using photo-induced current transient spectroscopy and thermoelectric effect spectroscopy techniques. The operational stress limit is also given.

  13. Measurement of the atmospheric muon charge ratio at TeV energies with MINOS

    SciTech Connect (OSTI)

    Adamson, P.; Andreopoulos, C.; Arms, K.E.; Armstrong, R.; Auty, D.J.; Avvakumov, S.; Ayres, D.S.; Baller, B.; Barish, B.; Barnes, P.D., Jr.; Barr, G.; /Fermilab /University Coll. London /Rutherford /Minnesota U. /Indiana U. /Sussex U. /Stanford U., Phys. Dept. /Argonne /Caltech /LLNL, Livermore /Oxford U.

    2007-05-01

    The 5.4 kton MINOS far detector has been taking charge-separated cosmic ray muon data since the beginning of August, 2003 at a depth of 2070 m.w.e. in the Soudan Underground Laboratory, Minnesota, USA. The data with both forward and reversed magnetic field running configurations were combined to minimize systematic errors in the determination of the underground muon charge ratio. When averaged, two independent analyses find the charge ratio underground to be N{sub {mu}}+/N{sub {mu}}-=1.374{+-}0.004(stat)-0.010{sup +0.012}(sys). Using the map of the Soudan rock overburden, the muon momenta as measured underground were projected to the corresponding values at the surface in the energy range 1-7 TeV. Within this range of energies at the surface, the MINOS data are consistent with the charge ratio being energy independent at the 2 standard deviation level. When the MINOS results are compared with measurements at lower energies, a clear rise in the charge ratio in the energy range 0.3-1.0 TeV is apparent. A qualitative model shows that the rise is consistent with an increasing contribution of kaon decays to the muon charge ratio.

  14. Magnetic Correlations in the Quasi-Two-Dimensional Semiconducting Ferromagnet CrSiTe3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Williams, Travis J.; Aczel, Adam A.; Lumsden, Mark D.; Nagler, Stephen E.; Stone, Matthew B.; Yan, Jiaqiang -Q.; Mandrus, D.

    2015-10-02

    Intrinsic, 2D ferromagnetic semiconductors are an important class of materials for overcoming dilute magnetic semiconductors’ limitations for spintronics. CrSiTe3 is a particularly interesting material of this class, since it can likely be exfoliated to single layers, for which Tc is predicted to increase dramatically. Establishing the nature of the bulk material’s magnetism is necessary for understanding the thin-film magnetic behavior and the material’s possible applications. In this work, we use elastic and inelastic neutron scattering to measure the magnetic properties of single crystalline CrSiTe3. We find a very small single ion anisotropy that favors magnetic ordering along the c-axis andmore » that the measured spin waves fit well to a model in which the moments are only weakly coupled along that direction. Then, we find that both static and dynamic correlations persist within the ab-plane up to at least 300 K, which is strong evidence of the material's 2D characteristics that are relevant for future studies on thin film and monolayer samples.« less

  15. Nanoscale imaging of photocurrent and efficiency in CdTe solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Leite, Marina S.; National Inst. of Standards and Technology; Abashin, Maxim; National Inst. of Standards and Technology; Lezec, Henri J.; Gianfrancesco, Anthony; Talin, A. Alec; Sandia National Lab.; Zhitenev, Nikolai B.

    2014-10-15

    The local collection characteristics of grain interiors and grain boundaries in thin film CdTe polycrystalline solar cells are investigated using scanning photocurrent microscopy. The carriers are locally generated by light injected through a small aperture (50-300 nm) of a near-field scanning optical microscope in an illumination mode. Possible influence of rough surface topography on light coupling is examined and eliminated by sculpting smooth wedges on the granular CdTe surface. By varying the wavelength of light, nanoscale spatial variations in external quantum efficiency are mapped. We find that the grain boundaries (GBs) are better current collectors than the grain interiors (GIs).more » The increased collection efficiency is caused by two distinct effects associated with the material composition of GBs. First, GBs are charged, and the corresponding built-in field facilitates the separation and the extraction of the photogenerated carriers. Second, the GB regions generate more photocurrent at long wavelength corresponding to the band edge, which can be caused by a smaller local band gap. As a result, resolving carrier collection with nanoscale resolution in solar cell materials is crucial for optimizing the polycrystalline device performance through appropriate thermal processing and passivation of defect and surfaces.« less

  16. The search for TeV-scale dark matter with the HAWC observatory

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Harding, J. Patrick

    2015-01-01

    The High Altitude Water Cherenkov (HAWC) observatory is a wide field-of-view detector sensitive to 100 GeV - 100 TeV gamma rays and cosmic rays. Located at an elevation of 4100 m on the Sierra Negra mountain in Mexico, HAWC observes extensive air showers from gamma and cosmic rays with an array of water tanks which produce Cherenkov light in the presence of air showers. With a field-of-view capable of observing 2/3 of the sky each day, and a sensitivity of 1 Crab/day, HAWC will be able to map out the sky in gamma and cosmic rays in detail. In thismore » paper, we discuss the capabilities of HAWC to map out the directions and spectra of TeV gamma rays and cosmic rays coming from sources of dark matter annihilation. We discuss the HAWC sensitivity to multiple extended sources of dark matter annihilation and the possibility of HAWC observations of annihilations in nearby dark matter subhalos.« less

  17. Structural characterization and novel optical properties of defect chalcopyrite ZnGa{sub 2}Te{sub 4} thin films

    SciTech Connect (OSTI)

    Fouad, S.S.; Sakr, G.B.; Yahia, I.S.; Basset, D.M. Abdel

    2011-11-15

    Highlights: {yields} Preparation and characterization of ZnGa{sub 2}Te{sub 4} in powder and thin film forms. {yields} Structure properties such as XRD and EDX. {yields} Optical constant of the as-deposited ZnGa{sub 2}Te{sub 4} for the first time. {yields} Extraction of the optical parameters of the studied films. -- Abstract: Stoichiometric thin film samples of the ternary ZnGa{sub 2}Te{sub 4} defect chalcopyrite compound were prepared and characterized by X-ray diffraction technique. The elemental chemical composition of the prepared bulk material as well as of the as-deposited film was determined by energy-dispersive X-ray spectrometry. ZnGa{sub 2}Te{sub 4} thin films were deposited, by conventional thermal evaporation technique onto highly cleaned glass substrates. The X-ray and electron diffraction studies revealed that the as-deposited and the annealed ZnGa{sub 2}Te{sub 4} films at annealing temperature t{sub a} {<=} 548 K are amorphous, while those annealed at t{sub a} {>=} 573 K (for 1 h), are polycrystalline. The optical properties of the as-deposited films have been investigated for the first time at normal incidence in the spectral range from 500 to 2500 nm. The refractive index dispersion in the transmission and low absorption region is adequately described by the Wemple-DiDomenico single oscillator model, whereby, the values of the oscillator parameters have been calculated. The analysis of the optical absorption coefficient revealed an in-direct optical transition with energy of 1.33 eV for the as-deposited sample. This work suggested that ZnGa{sub 2}Te{sub 4} is a good candidate in solar cell devices as an absorbing layer.

  18. Magneto-infrared study of electron-hole system in strained semimetallic HgTe quantum wells

    SciTech Connect (OSTI)

    Vasilyev, Yu. B.; Greshnov, A. A.; Mikhailov, N. N.; Suchalkin, S. D.; Tung, L.-C.; Smirnov, D.; Gouider, F.; Nachtwei, G.

    2013-12-04

    Magneto infrared absorption measurements have been performed on HgTe/CdHgTe quantum wells with different thicknesses grown on (013) GaAs substrate. Cyclotron resonance effective masses, inter-Landau-level transition energies and their dependence on magnetic field are measured. The measured intersubband energies are in good agreement with the theoretically calculated values. Strong spin-orbit interaction is responsible for cyclotron resonance splitting in asymmetric quantum wells. We demonstrate that the increase of the quantum well thickness leads to a semimetallic state, allowing for simultaneous observation of holes and electron transitions.

  19. Direct Analysis of JV-Curves Applied to an Outdoor-Degrading CdTe Module (Presentation)

    SciTech Connect (OSTI)

    Jordan, D; Kurtz, S.; Ulbrich, C.; Gerber, A.; Rau, U.

    2014-03-01

    We present the application of a phenomenological four parameter equation to fit and analyze regularly measured current density-voltage JV curves of a CdTe module during 2.5 years of outdoor operation. The parameters are physically meaningful, i.e. the short circuit current density Jsc, open circuit voltage Voc and differential resistances Rsc, and Roc. For the chosen module, the fill factor FF degradation overweighs the degradation of Jsc and Voc. Interestingly, with outdoor exposure, not only the conductance at short circuit, Gsc, increases but also the Gsc(Jsc)-dependence. This is well explained with an increase in voltage dependent charge carrier collection in CdTe.

  20. T-641: Oracle Java SE Critical Patch Update Advisory- June 2011

    Broader source: Energy.gov [DOE]

    This Critical Patch Update contains 17 new security fixes for Oracle Java SE - 5 apply to client and server deployments of Java SE, 11 apply to client deployments of Java SE only, and 1 applies to server deployments of Java SE only. All of these vulnerabilities may be remotely exploitable without authentication, i.e., may be exploited over a network without the need for a username and password. Oracle CVSS scores assume that a user running a Java applet or Java Web Start application has administrator privileges (typical on Windows). Where the user does not run with administrator privileges (typical on Solaris and Linux), the corresponding CVSS impact scores for Confidentiality, Integrity, and Availability are "Partial" instead of "Complete", and the corresponding CVSS Base score is 7.5 instead of 10 respectively. For issues in Deployment, fixes are only made available for JDK and JRE 6. Users should use the Java Web Start in JRE 6 and the new Java Plug-in introduced in 6 Update 10. CVE-2011-0862, CVE-2011-0873, CVE-2011-0815, CVE-2011-0817, CVE-2011-0863, CVE-2011-0864, CVE-2011-0802, CVE-2011-0814, CVE-2011-0871, CVE-2011-0786, CVE-2011-0788, CVE-2011-0866, CVE-2011-0868, CVE-2011-0872, CVE-2011-0867, CVE-2011-0869, and CVE-2011-0865

  1. Molecular beam epitaxial growth of Bi{sub 2}Se{sub 3} nanowires and nanoflakes

    SciTech Connect (OSTI)

    Knebl, G. M. Gessler, J. R.; Kamp, M.; Höfling, S.

    2014-09-29

    Topological Insulators are in focus of immense research efforts and rapid scientific progress is obtained in that field. Bi{sub 2}Se{sub 3} has proven to be a topological insulator material that provides a large band gap and a band structure with a single Dirac cone at the Γ-point. This makes Bi{sub 2}Se{sub 3} one of the most promising three dimensional topological insulator materials. While Bi{sub 2}Se{sub 3} nanowires and nanoflakes so far were fabricated with different methods and for different purposes, we here present the first Bi{sub 2}Se{sub 3} nanowires as well as nanoflakes grown by molecular beam epitaxy. The nanostructures were nucleated on pretreated, silicon (100) wafers. Altering the growth conditions nanoflakes could be fabricated instead of nanowires; both with high crystalline quality, confirmed by scanning electron microscopy as well as transmission electron microscopy. These nanostructures have promise for spintronic devices and Majorana fermion observation in contact to superconductor materials.

  2. Stability of S and Se induced reconstructions on GaP(001)(21) surface

    SciTech Connect (OSTI)

    Li , D. F.; Guo, Zhi C.; Xiao, Hai Yan; Zu, Xiaotao T.; Gao, Fei

    2010-10-15

    The structural and electronic properties of S- and Se- passivated GaP(001)(21) surfaces were studied using first-principles simulations. Our calculations showed that the most stable structure consists of a single chalcogen atom (S or Se) in the first crystal layer, which is bonded to two Ga atoms of the second layer, and the third P layer replaced by chalcogen atoms, similar to the passivation of GaAs(001)(21) surface by chalcogen atoms. The structural parameters were determined and the surface band characters and the local density of states were also analyzed. The results showed that the preferable structure has no surface states in the bulk band gap, but the energy band gaps of the S- and Se-adsorbed GaP(001) surfaces are 1.83eV and 1.63eV, respectively. The passivation effects for the S- and Se-adsorbed surfaces are similar to each other.

  3. T-558: Oracle Java SE and Java for Business Critical Patch Update Advisory- February 2011

    Broader source: Energy.gov [DOE]

    This Critical Patch Update contains 21 new security fixes for Oracle Java SE and Java for Business. 19 of these vulnerabilities may be remotely exploitable without authentication, i.e., may be exploited over a network without the need for a username and password.

  4. Manufacturable CuIn(Ga)Se{sub 2}-based solar cells via development of co-sputtered CuInSe{sub 2} absorber layers

    SciTech Connect (OSTI)

    Dr. Ingrid Eisgruber

    1999-03-20

    Yield and reproducibility remain issues in CuIn(Ga)Se{sub 2} (CIGS) photovoltaic module fabrication. While small-area cells (<1 cm{sup 2}) over 18% efficient have been reported, the best large-area manufactured devices (>1 ft{sup 2}) are 11% efficient with about 60% yield. If improvements in large-area manufacturing can accomplish 15% efficiency and 90% yield, the result is a doubling in throughput leading to a reduction in cost per watt of over 50%. The challenge now facing the photovoltaics industry is to bring the efficiencies of small-area cells and large-area industrial modules closer together and to raise manufacturing yields.

  5. Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization

    DOE Patents [OSTI]

    Tuttle, J.R.; Contreras, M.A.; Noufi, R.; Albin, D.S.

    1994-10-18

    Enhanced quality thin films of Cu[sub w](In,Ga[sub y])Se[sub z] for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu[sub x]Se on a substrate to form a large-grain precursor and then converting the excess Cu[sub x]Se to Cu(In,Ga)Se[sub 2] by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)[sub y]Se[sub z]. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300--600 C, where the Cu(In,Ga)Se[sub 2] remains solid, while the excess Cu[sub x]Se is in a liquid flux. The characteristic of the resulting Cu[sub w](In,Ga)[sub y]Se[sub z] can be controlled by the temperature. Higher temperatures, such as 500--600 C, result in a nearly stoichiometric Cu(In,Ga)Se[sub 2], whereas lower temperatures, such as 300--400 C, result in a more Cu-poor compound, such as the Cu[sub z](In,Ga)[sub 4]Se[sub 7] phase. 7 figs.

  6. Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization

    DOE Patents [OSTI]

    Tuttle, John R.; Contreras, Miguel A.; Noufi, Rommel; Albin, David S.

    1994-01-01

    Enhanced quality thin films of Cu.sub.w (In,Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In,Ga)Se.sub.2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In,Ga)Se.sub.2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In,Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In,Ga)Se.sub.2, whereas lower temperatures, such as 300.degree.-400.degree. C., result in a more Cu-poor compound, such as the Cu.sub.z (In,Ga).sub.4 Se.sub.7 phase.

  7. Cross-Sectional Conductive Atomic Force Microscopy of CdTe/CdS Solar Cells: Effects of Etching and Back-Contact Processes; Preprint

    SciTech Connect (OSTI)

    Moutinho, H. R.; Dhere, R. G.; Jiang, C.-S.; Gessert, T. A.; Duda, A. M.; Young, M.; Metzger, W. K.; Li, X.; Al-Jassim, M. M.

    2006-05-01

    We investigated the effects of the etching processes using bromine and nitric-phosphoric acid solutions, as well as of Cu, in the bulk electrical conductivity of CdTe/CdS solar cells using conductive atomic force microscopy (C-AFM). Although the etching process can create a conductive layer on the surface of the CdTe, the layer is very shallow. In contrast, the addition of a thin layer of Cu to the surface creates a conductive layer inside the CdTe that is not uniform in depth, is concentrated at grains boundaries, and may short circuit the device if the CdTe is too thin. The etching process facilitates the Cu diffusion and results in thicker conductive layers. The existence of this inhomogeneous conductive layer directly affects the current transport and is probably the reason for needing thick CdTe in these devices.

  8. Evaluation of a CdTe semiconductor based compact gamma camera for sentinel lymph node imaging

    SciTech Connect (OSTI)

    Russo, Paolo; Curion, Assunta S.; Mettivier, Giovanni; Esposito, Michela; Aurilio, Michela; Caraco, Corradina; Aloj, Luigi; Lastoria, Secondo

    2011-03-15

    Purpose: The authors assembled a prototype compact gamma-ray imaging probe (MediPROBE) for sentinel lymph node (SLN) localization. This probe is based on a semiconductor pixel detector. Its basic performance was assessed in the laboratory and clinically in comparison with a conventional gamma camera. Methods: The room-temperature CdTe pixel detector (1 mm thick) has 256x256 square pixels arranged with a 55 {mu}m pitch (sensitive area 14.08x14.08 mm{sup 2}), coupled pixel-by-pixel via bump-bonding to the Medipix2 photon-counting readout CMOS integrated circuit. The imaging probe is equipped with a set of three interchangeable knife-edge pinhole collimators (0.94, 1.2, or 2.1 mm effective diameter at 140 keV) and its focal distance can be regulated in order to set a given field of view (FOV). A typical FOV of 70 mm at 50 mm skin-to-collimator distance corresponds to a minification factor 1:5. The detector is operated at a single low-energy threshold of about 20 keV. Results: For {sup 99m}Tc, at 50 mm distance, a background-subtracted sensitivity of 6.5x10{sup -3} cps/kBq and a system spatial resolution of 5.5 mm FWHM were obtained for the 0.94 mm pinhole; corresponding values for the 2.1 mm pinhole were 3.3x10{sup -2} cps/kBq and 12.6 mm. The dark count rate was 0.71 cps. Clinical images in three patients with melanoma indicate detection of the SLNs with acquisition times between 60 and 410 s with an injected activity of 26 MBq {sup 99m}Tc and prior localization with standard gamma camera lymphoscintigraphy. Conclusions: The laboratory performance of this imaging probe is limited by the pinhole collimator performance and the necessity of working in minification due to the limited detector size. However, in clinical operative conditions, the CdTe imaging probe was effective in detecting SLNs with adequate resolution and an acceptable sensitivity. Sensitivity is expected to improve with the future availability of a larger CdTe detector permitting operation at shorter distances from the patient skin.

  9. Correlation between the electronic structures and diffusion paths of interstitial defects in semiconductors: The case in CdTe

    SciTech Connect (OSTI)

    Ma, Jie; Yang, Jihui; Da Silva, J. L.F.; Wei, Su-Huai

    2014-10-30

    Using first-principles calculations, we study the diffusions of interstitial defects Cd, Cu, Te, and Cl in CdTe. We find that the diffusion behavior is strongly correlated with the electronic structure of the interstitial diffuser. For Cd and Cu, because the defect state is the non-degenerated slike state under Td symmetry, the diffusions are almost along the [111] directions between the tetrahedral sites, although the diffusion of Cu shows some deviation due to the s - d coupling. The diffusions of the neutral and charged Cd and Cu follow similar paths. However, for Te and Cl atoms, because the defect state is the degenerated p-like state under Td symmetry, large distortions occur. Therefore, the diffusion paths are very different from those of Cd and Cu interstitials, and depend strongly on the charge states of the interstitial atoms. For Te, we find that the distortion is mostly stabilized by the crystal-field splitting, but for Cl, the exchange splitting plays a more important role.

  10. Superior thermoelectric performance in PbTe-PbS pseudo-binary. Extremely low thermal conductivity and modulated carrier concentration

    SciTech Connect (OSTI)

    Wu, D.; Zhao, L. -D.; Tong, X.; Li, W.; Wu, L.; Tan, Q.; Pei, Y.; Huang, L.; Li, J. -F.; Zhu, Y.; Kanatzidis, M. G.; He, J.

    2015-05-19

    Lead chalcogenides have exhibited their irreplaceable role as thermoelectric materials at the medium temperature range, owing to highly degenerate electronic bands and intrinsically low thermal conductivities. PbTe-PbS pseudo-binary has been paid extensive attentions due to the even lower thermal conductivity which originates largely from the coexistence of both alloying and phase-separated precipitations. To investigate the competition between alloying and phase separation and its pronounced effect on the thermoelectric performance in PbTe-PbS, we systematically studied Spark Plasma Sintered (SPSed), 3 at% Na- doped (PbTe)1-x(PbS)x samples with x=10%, 15%, 20%, 25%, 30% and 35% by means of transmission electron microscopy (TEM) observations and theoretical calculations. Corresponding to the lowest lattice thermal conductivity as a result of the balance between point defect- and precipitates- scattering, the highest figure of merit ZT~2.3 was obtained at 923 K when PbS phase fraction x is at 20%. The consistently lower lattice thermal conductivities in SPSed samples compared with corresponding ingots, resulting from the powdering and follow-up consolidation processes, also contribute to the observed superior ZT. Notably, the onset of carrier concentration modulation ~600 K due to excessive Na’s diffusion and re-dissolution leads to the observed saturations of electrical transport properties, which is believed equally crucial to the outstanding thermoelectric performance of SPSed PbTe-PbS samples.

  11. Correlation between the electronic structures and diffusion paths of interstitial defects in semiconductors: The case in CdTe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ma, Jie; Yang, Jihui; Da Silva, J. L.F.; Wei, Su-Huai

    2014-10-30

    Using first-principles calculations, we study the diffusions of interstitial defects Cd, Cu, Te, and Cl in CdTe. We find that the diffusion behavior is strongly correlated with the electronic structure of the interstitial diffuser. For Cd and Cu, because the defect state is the non-degenerated slike state under Td symmetry, the diffusions are almost along the [111] directions between the tetrahedral sites, although the diffusion of Cu shows some deviation due to the s - d coupling. The diffusions of the neutral and charged Cd and Cu follow similar paths. However, for Te and Cl atoms, because the defect statemore » is the degenerated p-like state under Td symmetry, large distortions occur. Therefore, the diffusion paths are very different from those of Cd and Cu interstitials, and depend strongly on the charge states of the interstitial atoms. For Te, we find that the distortion is mostly stabilized by the crystal-field splitting, but for Cl, the exchange splitting plays a more important role.« less

  12. First Measurement of Hadronic Event Shapes in pp Collisions at sqrt(s)=7 TeV

    SciTech Connect (OSTI)

    Khachatryan, Vardan; et al.

    2011-05-01

    Hadronic event shapes have been measured in proton-proton collisions at sqrt(s)=7 TeV, with a data sample collected with the CMS detector at the LHC. The sample corresponds to an integrated luminosity of 3.2 inverse picobarns. Event-shape distributions, corrected for detector response, are compared with five models of QCD multijet production.

  13. Superior thermoelectric performance in PbTe-PbS pseudo-binary. Extremely low thermal conductivity and modulated carrier concentration

    SciTech Connect (OSTI)

    Wu, D.; Zhao, L. -D.; Tong, X.; Li, W.; Wu, L.; Tan, Q.; Pei, Y.; Huang, L.; Li, J. -F.; Zhu, Y.; Kanatzidis, M. G.; He, J.

    2015-05-19

    Lead chalcogenides have exhibited their irreplaceable role as thermoelectric materials at the medium temperature range, owing to highly degenerate electronic bands and intrinsically low thermal conductivities. PbTe-PbS pseudo-binary has been paid extensive attentions due to the even lower thermal conductivity which originates largely from the coexistence of both alloying and phase-separated precipitations. To investigate the competition between alloying and phase separation and its pronounced effect on the thermoelectric performance in PbTe-PbS, we systematically studied Spark Plasma Sintered (SPSed), 3 at% Na- doped (PbTe)1-x(PbS)x samples with x=10%, 15%, 20%, 25%, 30% and 35% by means of transmission electron microscopy (TEM) observations and theoretical calculations. Corresponding to the lowest lattice thermal conductivity as a result of the balance between point defect- and precipitates- scattering, the highest figure of merit ZT~2.3 was obtained at 923 K when PbS phase fraction x is at 20%. The consistently lower lattice thermal conductivities in SPSed samples compared with corresponding ingots, resulting from the powdering and follow-up consolidation processes, also contribute to the observed superior ZT. Notably, the onset of carrier concentration modulation ~600 K due to excessive Nas diffusion and re-dissolution leads to the observed saturations of electrical transport properties, which is believed equally crucial to the outstanding thermoelectric performance of SPSed PbTe-PbS samples.

  14. Thermal conductivity of Bi{sub 2}Te{sub 3} tilted nanowires, a molecular dynamics study

    SciTech Connect (OSTI)

    Li, Shen Lacroix, David; Termentzidis, Konstantinos; Chaput, Laurent; Stein, Nicolas; Frantz, Cedric

    2015-06-08

    Evidence for an excellent compromise between structural stability and low thermal conductivity has been achieved with tilted Bi{sub 2}Te{sub 3} nanowires. The latter ones were recently fabricated and there is a need in modeling and characterization. The structural stability and the thermal conductivity of Bi{sub 2}Te{sub 3} nanowires along the tilted [015]* direction and along the [010] direction have been explored. For the two configurations of nanowires, the effect of the length and the cross section on the thermal conductivity is discussed. The thermal conductivity of infinite size tilted nanowire is 0.34?W/m K, significantly reduced compared to nanowire along the [010] direction (0.59?W/m K). This reveals that in Bi{sub 2}Te{sub 3} nanowires the structural anisotropy can be as important as size effects to reduce the thermal conductivity. The main reason is the reduction of the phonon mean free path which is found to be 1.7?nm in the tilted nanowires, compared to 5.3?nm for the nanowires along the [010] direction. The fact that tilted Bi{sub 2}Te{sub 3} nanowire is mechanically stable and it has extremely low thermal conductivity suggests these nanowires as a promising material for future thermoelectric generation application.

  15. Strain induced Z{sub 2} topological insulating state of ?-As{sub 2}Te{sub 3}

    SciTech Connect (OSTI)

    Pal, Koushik; Waghmare, Umesh V.

    2014-08-11

    Topological insulators are non-trivial quantum states of matter which exhibit a gap in the electronic structure of their bulk form, but a gapless metallic electronic spectrum at the surface. Here, we predict a uniaxial strain induced electronic topological transition (ETT) from a band to topological insulating state in the rhombohedral phase (space group: R3{sup }m) of As{sub 2}Te{sub 3} (?-As{sub 2}Te{sub 3}) through first-principles calculations including spin-orbit coupling within density functional theory. The ETT in ?-As{sub 2}Te{sub 3} is shown to occur at the uniaxial strain ?{sub zz}?=??0.05 (?{sub zz}?=?1.77?GPa), passing through a Weyl metallic state with a single Dirac cone in its electronic structure at the ? point. We demonstrate the ETT through band inversion and reversal of parity of the top of the valence and bottom of the conduction bands leading to change in the ?{sub 2} topological invariant ?{sub 0} from 0 to 1 across the transition. Based on its electronic structure and phonon dispersion, we propose ultra-thin films of As{sub 2}Te{sub 3} to be promising for use in ultra-thin stress sensors, charge pumps, and thermoelectrics.

  16. Superior thermoelectric performance in PbTe-PbS pseudo-binary. Extremely low thermal conductivity and modulated carrier concentration

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wu, D.; Zhao, L. -D.; Tong, X.; Li, W.; Wu, L.; Tan, Q.; Pei, Y.; Huang, L.; Li, J. -F.; Zhu, Y.; et al

    2015-05-19

    Lead chalcogenides have exhibited their irreplaceable role as thermoelectric materials at the medium temperature range, owing to highly degenerate electronic bands and intrinsically low thermal conductivities. PbTe-PbS pseudo-binary has been paid extensive attentions due to the even lower thermal conductivity which originates largely from the coexistence of both alloying and phase-separated precipitations. To investigate the competition between alloying and phase separation and its pronounced effect on the thermoelectric performance in PbTe-PbS, we systematically studied Spark Plasma Sintered (SPSed), 3 at% Na- doped (PbTe)1-x(PbS)x samples with x=10%, 15%, 20%, 25%, 30% and 35% by means of transmission electron microscopy (TEM) observationsmore » and theoretical calculations. Corresponding to the lowest lattice thermal conductivity as a result of the balance between point defect- and precipitates- scattering, the highest figure of merit ZT~2.3 was obtained at 923 K when PbS phase fraction x is at 20%. The consistently lower lattice thermal conductivities in SPSed samples compared with corresponding ingots, resulting from the powdering and follow-up consolidation processes, also contribute to the observed superior ZT. Notably, the onset of carrier concentration modulation ~600 K due to excessive Na’s diffusion and re-dissolution leads to the observed saturations of electrical transport properties, which is believed equally crucial to the outstanding thermoelectric performance of SPSed PbTe-PbS samples.« less

  17. A measurement of the 2 neutrino double beta decay rate of Te-130 in the CUORICINO experiment

    SciTech Connect (OSTI)

    Kogler, Laura

    2011-11-03

    CUORICINO was a cryogenic bolometer experiment designed to search for neutrinoless double beta decay and other rare processes, including double beta decay with two neutrinos (2{nu}{beta}{beta}). The experiment was located at Laboratori Nazionali del Gran Sasso and ran for a period of about 5 years, from 2003 to 2008. The detector consisted of an array of 62 TeO{sub 2} crystals arranged in a tower and operated at a temperature of #24;10 mK. Events depositing energy in the detectors, such as radioactive decays or impinging particles, produced thermal pulses in the crystals which were read out using sensitive thermistors. The experiment included 4 enriched crystals, 2 enriched with {sup 130}Te and 2 with {sup 128}Te, in order to aid in the measurement of the 2{nu}{beta}{beta} rate. The enriched crystals contained a total of #24;350 g {sup 130}Te. The 128-enriched (130-depleted) crystals were used as background monitors, so that the shared backgrounds could be subtracted from the energy spectrum of the 130- enriched crystals. Residual backgrounds in the subtracted spectrum were fit using spectra generated by Monte-Carlo simulations of natural radioactive contaminants located in and on the crystals. The 2{nu}{beta}{beta} half-life was measured to be T{sup 2{nu}}{sub 1/2} = [9.81{+-} #6;0.96(stat){+-} 0.49(syst)]#2;x10{sup 20} y.

  18. Fully gapped superconductivity in In-doped topological crystalline insulator Pb0.5Sn0.5Te

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Du, Guan; Gu, G. D.; Du, Zengyi; Fang, Delong; Yang, Huan; Zhong, R. D.; Schneeloch, J.; Wen, Hai -Hu

    2015-07-27

    In this study, superconductors derived from topological insulators and topological crystalline insulators by chemical doping have long been considered to be candidates as topological superconductors. Pb0.5Sn0.5Te is a topological crystalline insulator with mirror symmetry protected surface states on (001)-, (011)-, and (111)-oriented surfaces. The superconductor (Pb0.5Sn0.5)0.7In0.3Te is produced by In doping in Pb0.5Sn0.5Te, and is thought to be a topological superconductor. Here we report scanning tunneling spectroscopy measurements of the superconducting state as well as the superconducting energy gap in (Pb0.5Sn0.5)0.7In0.3Te on a (001)-oriented surface. The spectrum can be well fitted by an anisotropic s-wave gap function of Δ =more » 0.72 + 0.18cos4θ meV using Dynes model. The results show that the superconductor seems to be a fully gapped one without any in-gap states, in contradiction with the expectation of a topological superconductor.« less

  19. Algorithmically scalable block preconditioner for fully implicit shallow water equations in CAM-SE

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lott, P Aaron; Woodward, Carol; Evans, Katherine J

    2015-01-01

    Performing accurate and efficient numerical simulation of global atmospheric climate models is challenging due to the disparate length and time scales over which physical processes interact. Implicit solvers enable the physical system to be integrated with a time step commensurate with processes being studied. The dominant cost of an implicit time step is the ancillary linear system solves, so we have developed a preconditioner aimed at improving the efficiency of these linear system solves. Our preconditioner is based on an approximate block factorization of the linearized shallow-water equations and has been implemented within the spectral element dynamical core within themore » Community Atmospheric Model (CAM-SE). In this paper we discuss the development and scalability of the preconditioner for a suite of test cases with the implicit shallow-water solver within CAM-SE.« less

  20. Low-cost CuInSe[sub 2] submodule development

    SciTech Connect (OSTI)

    Basol, B.M.; Kapur, V.K.; Halani, A.; Leidholm, C. )

    1992-10-01

    Aim of this project is development and demonstration of processing steps necessary for fabrication of high efficiency CuInSe[sub 2] solar cells and sub-modules by the two-stage technique (also called the selenization method.) During this period, we have optimized the processing parameters of this method and demonstrated CuInSe[sub 2]/CdS/ZnO devices with a 1[endash]4 cm[sup 2] area and up to 12.4% active area efficiency. We have also developed a novel approach for the preparation of Cu/In precursors that improved the stoichiometric and morphological uniformity in these films. We have developed processing steps and tooling for handling up to 1 ft[sup 2] size substrates and as a result of these efforts demonstrated our first monolithically integrated sub-module of 1 ft[sup 2] area. 16 figs, 1 tab, 15 refs.

  1. CdS/PbSe heterojunction for high temperature mid-infrared photovoltaic detector applications

    SciTech Connect (OSTI)

    Weng, Binbin E-mail: shi@ou.edu; Qiu, Jijun; Zhao, Lihua; Chang, Caleb; Shi, Zhisheng E-mail: shi@ou.edu

    2014-03-24

    n-CdS/p-PbSe heterojunction is investigated. A thin CdS film is deposited by chemical bath deposition on top of epitaxial PbSe film by molecular beam epitaxy on Silicon. Current-voltage measurements demonstrate very good junction characteristics with rectifying ratio of ∼178 and ideality factor of 1.79 at 300 K. Detectors made with such structure exhibit mid-infrared spectral photoresponse at room temperature. The peak responsivity R{sub λ} and specific detectivity D{sup *} are 0.055 A/W and 5.482 × 10{sup 8} cm·Hz{sup 1/2}/W at λ = 4.7 μm under zero-bias photovoltaic mode. Temperature-dependent photoresponse measurements show abnormal intensity variation below ∼200 K. Possible reasons for this phenomenon are also discussed.

  2. Optical spectroscopy study of the three-dimensional Dirac semimetal ZrTe5

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chen, R. Y.; Gu, G. D.; Zhang, S. J.; Schneeloch, J. A.; Zhang, C.; Li, Q.; Wang, N. L.

    2015-08-05

    Three-dimensional (3D) topological Dirac materials have been under intensive study recently. The layered compound ZrTe5 has been suggested to be one such material as a result of transport and angle-resolved photoemission spectroscopy experiments. Here, we perform infrared reflectivity measurements to investigate the underlying physics of this material. The derived optical conductivity increases linearly with frequency below normal interband transitions, which provides optical spectroscopic proof of a 3D Dirac semimetal. In addition, the plasma edge shifts dramatically to lower energy upon temperature cooling, which might be due to the shrinking of the lattice parameters. Additionally, an extremely sharp peak shows upmore » in the frequency-dependent optical conductivity, indicating the presence of a Van Hove singularity in the joint density of state.« less

  3. Natural nanostructure and superlattice nanodomains in AgSbTe{sub 2}

    SciTech Connect (OSTI)

    Carlton, Christopher E.; De Armas, Ricardo; Shao-Horn, Yang E-mail: shaohorn@mit.edu; Ma, Jie; May, Andrew F.; Delaire, Olivier E-mail: shaohorn@mit.edu

    2014-04-14

    AgSbTe{sub 2} has long been of interest for thermoelectric applications because of its favorable electronic properties and its low lattice thermal conductivity of ?0.7?W/mK. In this work, we report new findings from a high-resolution transmission electron microscopy study revealing two nanostructures in single crystal Ag{sub 1?x}Sb{sub 1+x}Sb{sub 2+x} (with x?=?0, 0.1, 0.2); (i) a rippled natural nanostructure with a period of ?2.55?nm and (ii) superlattice ordered nanodomains consistent with cation ordering predicted in previous density functional theory studies. These nanostructures, combined with point-defects, probably serve as sources of scattering for phonons, thereby yielding a low lattice thermal conductivity over a wide temperature range.

  4. EVIDENCE OF A HADRONIC ORIGIN FOR THE TeV SOURCE J1834-087

    SciTech Connect (OSTI)

    Frail, D. A.; Claussen, M. J.; Mehault, J.

    2013-08-20

    We report on the discovery of compact, narrow OH line emission from the hydroxyl molecule at 1720 MHz toward the extended TeV source J1834-087. The origin of this high energy emission is unknown; it could be powered by one or more candidate neutron stars (leptonic) or by cosmic rays interacting with dense gas (hadronic). The OH emission is detected near the center of J1834-087, coincident with the radio continuum of the supernova remnant W41, and the radial velocity of the line is the same velocity as a giant molecular cloud along the line of sight. We argue that the OH is maser emission stimulated by the interaction of the W41 shock with the molecular cloud. The known correlation between {gamma}-ray bright supernova remnants and OH masers favors a hadronic interpretation for this high energy emission.

  5. Search for disappearing tracks in proton-proton collisions at ?s = 8 TeV

    SciTech Connect (OSTI)

    Khachatryan, V.

    2015-01-19

    A search is presented for long-lived charged particles that decay within the CMS detector and produce the signature of a disappearing track. Disappearing tracks are identified as those with little or no associated calorimeter energy deposits and with missing hits in the outer layers of the tracker. The search uses proton-proton collision data recorded at ?s = 8 TeV that corresponds to an integrated luminosity of 19.5 fb-1. The results of the search are interpreted in the context of the anomaly-mediated supersymmetry breaking (AMSB) model. The number of observed events is in agreement with the background expectation, and limits are set on the cross section of direct electroweak chargino production in terms of the chargino mass and mean proper lifetime. At 95% confidence level, AMSB models with a chargino mass less than 260 GeV, corresponding to a mean proper lifetime of 0.2 ns, are excluded.

  6. Performance Stabilization of CdTe PV Modules using Bias and Light

    SciTech Connect (OSTI)

    Silverman, T. J.; Deceglie, M. G.; Marion, B.; Kurtz, S. R.

    2014-07-01

    Reversible performance changes due to light exposure frustrate repeatable performance measurements on CdTe PV modules. It is common to use extended light-exposure to ensure that measurements are representative of outdoor performance. We quantify the extent to which such a light-exposed state depends on module temperature and consider bias in the dark to aid in stabilization. We evaluate the use of dark forward bias to bring about a performance state equivalent to that obtained with light exposure, and to maintain a light-exposed state prior to STC performance measurement. Our results indicate that the most promising method for measuring a light-exposed state is to use light exposure at controlled temperature followed by prompt STC measurement with a repeatable time interval between exposure and the STC measurement.

  7. Search for disappearing tracks in proton-proton collisions at ?s = 8 TeV

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Khachatryan, V.

    2015-01-19

    A search is presented for long-lived charged particles that decay within the CMS detector and produce the signature of a disappearing track. Disappearing tracks are identified as those with little or no associated calorimeter energy deposits and with missing hits in the outer layers of the tracker. The search uses proton-proton collision data recorded at ?s = 8 TeV that corresponds to an integrated luminosity of 19.5 fb-1. The results of the search are interpreted in the context of the anomaly-mediated supersymmetry breaking (AMSB) model. The number of observed events is in agreement with the background expectation, and limits aremoreset on the cross section of direct electroweak chargino production in terms of the chargino mass and mean proper lifetime. At 95% confidence level, AMSB models with a chargino mass less than 260 GeV, corresponding to a mean proper lifetime of 0.2 ns, are excluded.less

  8. Probing color coherence effects in pp collisions at $\\sqrt{s}=7\\,\\text {TeV} $

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chatrchyan, Serguei; et al.

    2013-11-22

    A study of color coherence effects in pp collisions at a center-of-mass energy of 7 TeV is presented. The data used in the analysis were collected in 2010 with the CMS detector at the LHC and correspond to an integrated luminosity of 36 inverse picobarns. Events are selected that contain at least three jets and where the two jets with the largest transverse momentum exhibit a back-to-back topology. The measured angular correlation between the second- and third-leading jet is shown to be sensitive to color coherence effects, and is compared to the predictions of Monte Carlo models with various implementationsmoreof color coherence. None of the models describe the data satisfactorily.less

  9. Surface defect states in MBE-grown CdTe layers

    SciTech Connect (OSTI)

    Olender, Karolina; Wosinski, Tadeusz; Fronc, Krzysztof; Tkaczyk, Zbigniew; Chusnutdinow, Sergij; Karczewski, Grzegorz

    2014-02-21

    Semiconductor surface plays an important role in the technology of semiconductor devices. In the present work we report results of our deep-level transient spectroscopy (DLTS) investigations of surface defect states in nitrogen doped p-type CdTe layers grown by the molecular-beam epitaxy technique. We observed a deep-level trap associated with surface states, with the activation energy for hole emission of 0.33 eV. DLTS peak position in the spectra for this trap, and its ionization energy, strongly depend on the electric field. Our measurements allow to determine a mechanism responsible for the enhancement of hole emission rate from the traps as the phonon-assisted tunnel effect. Density of surface defect states significantly decreased as a result of passivation in ammonium sulfide. Capacitance-voltage measurements confirmed the results obtained by the DLTS technique.

  10. Higgs self-coupling measurements at a 100 TeV hadron collider

    SciTech Connect (OSTI)

    Barr, Alan J.; Dolan, Matthew J.; Englert, Christoph; Ferreira de Lima, Enoque Danilo; Spannowsky, Michael

    2015-02-03

    An important physics goal of a possible next-generation high-energy hadron collider will be precision characterisation of the Higgs sector and electroweak symmetry breaking. A crucial part of understanding the nature of electroweak symmetry breaking is measuring the Higgs self-interactions. We study dihiggs production in proton-proton collisions at 100 TeV centre of mass energy in order to estimate the sensitivity such a machine would have to variations in the trilinear Higgs coupling around the Standard Model expectation. We focus on the bb¯γγ final state, including possible enhancements in sensitivity by exploiting dihiggs recoils against a hard jet. In conclusion, we find that it should be possible to measure the trilinear self-coupling with 40% accuracy given 3/ab and 12% with 30/ab of data.

  11. Search for Single Vectorlike Quarks in pp? Collisions at ?s=1.96 TeV

    SciTech Connect (OSTI)

    Abazov, V. M.; Abbott, B.; Acharya, B. S.; Adams, M.; Adams, T.; Alexeev, G. D.; Alkhazov, G.; Alton, A.; Alverson, G.; Alves, G. A.; Ancu, L. S.; Aoki, M.; Arnoud, Y.; Arov, M.; Askew, A.; sman, B.; Atramentov, O.; Avila, C.; BackusMayes, J.; Badaud, F.; Bagby, L.; Baldin, B.; Bandurin, D. V.; Banerjee, S.; Barberis, E.; Baringer, P.; Barreto, J.; Bartlett, J. F.; Bassler, U.; Bazterra, V.; Beale, S.; Bean, A.; Begalli, M.; Begel, M.; Belanger-Champagne, C.; Bellantoni, L.; Beri, S. B.; Bernardi, G.; Bernhard, R.; Bertram, I.; Besanon, M.; Beuselinck, R.; Bezzubov, V. A.; Bhat, P. C.; Bhatnagar, V.; Blazey, G.; Blessing, S.; Bloom, K.; Boehnlein, A.; Boline, D.; Bolton, T. A.; Boos, E. E.; Borissov, G.; Bose, T.; Brandt, A.; Brandt, O.; Brock, R.; Brooijmans, G.; Bross, A.; Brown, D.; Brown, J.; Bu, X. B.; Buehler, M.; Buescher, V.; Bunichev, V.; Burdin, S.; Burnett, T. H.; Buszello, C. P.; Calpas, B.; Camacho-Prez, E.; Carrasco-Lizarraga, M. A.; Casey, B. C. K.; Castilla-Valdez, H.; Caughron, S.; Chakrabarti, S.; Chakraborty, D.; Chan, K. M.; Chandra, A.; Chen, G.; Chevalier-Thry, S.; Cho, D. K.; Cho, S. W.; Choi, S.; Choudhary, B.; Christoudias, T.; Cihangir, S.; Claes, D.; Clutter, J.; Cooke, M.; Cooper, W. E.; Corcoran, M.; Couderc, F.; Cousinou, M.-C.; Croc, A.; Cutts, D.; ?wiok, M.; Das, A.; Davies, G.; De, K.; de Jong, S. J.; De La Cruz-Burelo, E.; Dliot, F.; Demarteau, M.; Demina, R.; Denisov, D.; Denisov, S. P.; Desai, S.; DeVaughan, K.; Diehl, H. T.; Diesburg, M.; Dominguez, A.; Dorland, T.; Dubey, A.; Dudko, L. V.; Duggan, D.; Duperrin, A.; Dutt, S.; Dyshkant, A.; Eads, M.; Edmunds, D.; Ellison, J.; Elvira, V. D.; Enari, Y.; Evans, H.; Evdokimov, A.; Evdokimov, V. N.; Facini, G.; Ferbel, T.; Fiedler, F.; Filthaut, F.; Fisher, W.; Fisk, H. E.; Fortner, M.; Fox, H.; Fuess, S.; Gadfort, T.; Garcia-Bellido, A.; Gavrilov, V.; Gay, P.; Geist, W.; Geng, W.; Gerbaudo, D.; Gerber, C. E.; Gershtein, Y.; Ginther, G.; Golovanov, G.; Goussiou, A.; Grannis, P. D.; Greder, S.; Greenlee, H.; Greenwood, Z. D.; Gregores, E. M.; Grenier, G.; Gris, Ph.; Grivaz, J.-F.; Grohsjean, A.; Grnendahl, S.; Grnewald, M. W.; Guo, F.; Gutierrez, G.; Gutierrez, P.; Haas, A.; Hagopian, S.; Haley, J.; Han, L.; Harder, K.; Harel, A.; Hauptman, J. M.; Hays, J.; Head, T.; Hebbeker, T.; Hedin, D.; Hegab, H.; Heinson, A. P.; Heintz, U.; Hensel, C.; Heredia-De La Cruz, I.; Herner, K.; Hesketh, G.; Hildreth, M. D.; Hirosky, R.; Hoang, T.; Hobbs, J. D.; Hoeneisen, B.; Hohlfeld, M.; Hossain, S.; Hubacek, Z.; Huske, N.; Hynek, V.; Iashvili, I.; Illingworth, R.; Ito, A. S.; Jabeen, S.; Jaffr, M.; Jain, S.; Jamin, D.; Jesik, R.; Johns, K.; Johnson, M.; Johnston, D.; Jonckheere, A.; Jonsson, P.; Joshi, J.; Juste, A.; Kaadze, K.; Kajfasz, E.; Karmanov, D.; Kasper, P. A.; Katsanos, I.; Kehoe, R.; Kermiche, S.; Khalatyan, N.; Khanov, A.; Kharchilava, A.; Kharzheev, Y. N.; Khatidze, D.; Kirby, M. H.; Kohli, J. M.; Kozelov, A. V.; Kraus, J.; Kumar, A.; Kupco, A.; Kur?a, T.; Kuzmin, V. A.; Kvita, J.; Lammers, S.; Landsberg, G.; Lebrun, P.; Lee, H. S.; Lee, S. W.; Lee, W. M.; Lellouch, J.; Li, L.; Li, Q. Z.; Lietti, S. M.; Lim, J. K.; Lincoln, D.; Linnemann, J.; Lipaev, V. V.; Lipton, R.; Liu, Y.; Liu, Z.; Lobodenko, A.; Lokajicek, M.; Love, P.; Lubatti, H. J.; Luna-Garcia, R.; Lyon, A. L.; Maciel, A. K. A.; Mackin, D.; Madar, R.; Magaa-Villalba, R.; Malik, S.; Malyshev, V. L.; Maravin, Y.; Martnez-Ortega, J.; McCarthy, R.; McGivern, C. L.; Meijer, M. M.; Melnitchouk, A.; Menezes, D.; Mercadante, P. G.; Merkin, M.; Meyer, A.; Meyer, J.; Mondal, N. K.; Muanza, G. S.; Mulhearn, M.; Nagy, E.; Naimuddin, M.; Narain, M.; Nayyar, R.; Neal, H. A.; Negret, J. P.; Neustroev, P.; Novaes, S. F.; Nunnemann, T.; Obrant, G.; Orduna, J.; Osman, N.; Osta, J.; Otero y Garzn, G. J.; Owen, M.; Padilla, M.; Pangilinan, M.; Parashar, N.; Parihar, V.; Park, S. K.; Parsons, J.; Partridge, R.; Parua, N.; Patwa, A.; Penning, B.; Perfilov, M.; Peters, K.; Peters, Y.; Petrillo, G.; Ptroff, P.; Piegaia, R.; Piper, J.; Pleier, M.-A.; Podesta-Lerma, P. L. M.; Podstavkov, V. M.; Pol, M.-E.; Polozov, P.; Popov, A. V.; Prewitt, M.; Price, D.; Protopopescu, S.; Qian, J.; Quadt, A.; Quinn, B.; Rangel, M. S.; Ranjan, K.; Ratoff, P. N.; Razumov, I.; Renkel, P.; Rich, P.; Rijssenbeek, M.; Ripp-Baudot, I.; Rizatdinova, F.; Rominsky, M.; Royon, C.; Rubinov, P.; Ruchti, R.; Safronov, G.; Sajot, G.; Snchez-Hernndez, A.; Sanders, M. P.; Sanghi, B.; Santos, A. S.; Savage, G.; Sawyer, L.; Scanlon, T.; Schamberger, R. D.; Scheglov, Y.; Schellman, H.; Schliephake, T.; Schlobohm, S.; Schwanenberger, C.; Schwienhorst, R.; Sekaric, J.; Severini, H.; Shabalina, E.; Shary, V.; Shchukin, A. A.; Shivpuri, R. K.; Simak, V.; Sirotenko, V.; Skubic, P.; Slattery, P.; Smirnov, D.

    2011-02-22

    We present a search for hypothetical vectorlike quarks in pp? collisions at ?s=1.96 TeV. The data were collected by the D0 detector at the Fermilab Tevatron Collider and correspond to an integrated luminosity of 5.4 fb?. We select events with a final state composed of a W or Z boson and a jet consistent with a heavy object decay. We observe no significant excess in comparison to the background prediction and set limits on production cross sections for vectorlike quarks decaying to W+jet and Z+jet. These are the most stringent limits to date for electroweak single vectorlike quark production at hadron colliders.

  12. Direct Observation of Room-Temperature Polar Ordering in Colloidal GeTe Nanocrystals

    SciTech Connect (OSTI)

    Polking, Mark J.; Zheng, Haimei; Urban, Jeffrey J.; Milliron, Delia J.; Chan, Emory; Caldwell, Marissa A.; Raoux, Simone; Kisielowski, Christian F.; Ager III, Joel W.; Ramesh, Ramamoorthy; Alivisatos, A.P.

    2009-12-07

    Ferroelectrics and other materials that exhibit spontaneous polar ordering have demonstrated immense promise for applications ranging from non-volatile memories to microelectromechanical systems. However, experimental evidence of polar ordering and effective synthetic strategies for accessing these materials are lacking for low-dimensional nanomaterials. Here, we demonstrate the synthesis of size-controlled nanocrystals of the polar material germanium telluride (GeTe) using colloidal chemistry and provide the first direct evidence of room-temperature polar ordering in nanocrystals less than 5 nm in size using aberration-corrected transmission electron microscopy. Synchrotron x-ray diffraction and Raman studies demonstrate a sizeable polar distortion and a reversible size-dependent polar phase transition in these nanocrystals. The stability of polar ordering in solution-processible nanomaterials suggests an economical avenue to Tbit/in2-density non-volatile memory devices and other applications.

  13. Probing color coherence effects in pp collisions at √s = 7 TeV

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chatrchyan, Serguei

    2014-06-11

    A study of color coherence effects in pp collisions at a center-of-mass energy of 7 TeV is presented. The data used in the analysis were collected in 2010 with the CMS detector at the LHC and correspond to an integrated luminosity of 36 inverse picobarns. Events are selected that contain at least three jets and where the two jets with the largest transverse momentum exhibit a back-to-back topology. The measured angular correlation between the second- and third-leading jet is shown to be sensitive to color coherence effects, and is compared to the predictions of Monte Carlo models with various implementationsmore » of color coherence. None of the models describe the data satisfactorily.« less

  14. Testing the Technicolor Interpretation of the CDF Dijet Excess at the 8-TeV LHC

    SciTech Connect (OSTI)

    Eichten, Estia; Lane, Kenneth; Martin, Adam; Pilon, Eric

    2012-10-01

    Under the assumption that the dijet excess seen by the CDF Collaboration near 150 Gev in Wjj production is due to the lightest technipion of the low-scale technicolor process $\\rho_T \\rightarrow W \\pi_T$, we study its observability in LHC detectors for 8 TeV collisions and 20 inverse femtobarns of integrated luminosity. We describe interesting new kinematic tests that can provide independent confirmation of this LSTC hypothesis. We show that cuts similar to those employed by CDF, and recently by ATLAS, cannot confirm the dijet signal. We propose cuts tailored to the LSTC hypothesis and its backgrounds at the LHC that may reveal $\\rho_T \\rightarrow \\ell\

  15. Ultrafast terahertz-induced response of GeSbTe phase-change materials

    SciTech Connect (OSTI)

    Shu, Michael J.; Zalden, Peter; Chen, Frank; Weems, Ben; Chatzakis, Ioannis; Xiong, Feng; Jeyasingh, Rakesh; Pop, Eric; Philip Wong, H.-S.; Hoffmann, Matthias C.; Wuttig, Matthias; Lindenberg, Aaron M.

    2014-06-23

    The time-resolved ultrafast electric field-driven response of crystalline and amorphous GeSbTe films has been measured all-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub-picosecond time-scale. Utilizing the near-band-gap transmission as a probe of the electronic and structural response below the switching threshold, we observe a field-induced heating of the carrier system and resolve the picosecond-time-scale energy relaxation processes and their dependence on the sample annealing condition in the crystalline phase. In the amorphous phase, an instantaneous electroabsorption response is observed, quadratic in the terahertz field, followed by field-driven lattice heating, with Ohmic behavior up to 200 kV/cm.

  16. Effects of chemo-mechanical polishing on CdZnTe X-ray and gamma-ray detectors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Egarievwe, Stephen E.; Hossain, Anwar; Okwechime, Ifechukwude O.; Gul, Rubi; James, Ralph B.

    2015-06-23

    Here, mechanically polishing cadmium zinc telluride (CdZnTe) wafers for x-ray and gamma-ray detectors often is inadequate in removing surface defects caused by cutting them from the ingots. Fabrication-induced defects, such as surface roughness, dangling bonds, and nonstoichiometric surfaces, often are reduced through polishing and etching the surface. In our earlier studies of mechanical polishing with alumina powder, etching with hydrogen bromide in hydrogen peroxide solution, and chemomechanical polishing with bromine–methanol–ethylene glycol solution, we found that the chemomechanical polishing process produced the least surface leakage current. In this research, we focused on using two chemicals to chemomechanically polish CdZnTe wafers aftermore » mechanical polishing, viz. bromine–methanol–ethylene glycol (BME) solution, and hydrogen bromide (HBr) in a hydrogen peroxide and ethylene–glycol solution. We used x-ray photoelectron spectroscopy (XPS), current–voltage (I–V) measurements, and Am-241 spectral response measurements to characterize and compare the effects of each solution. The results show that the HBr-based solution produced lower leakage current than the BME solution. Results from using the same chemomechanical polishing solution on two samples confirmed that the surface treatment affects the measured bulk current (a combination of bulk and surface currents). XPS results indicate that the tellurium oxide to tellurium peak ratios for the mechanical polishing process were reduced significantly by chemomechanical polishing using the BME solution (78.9% for Te 3d5/2O2 and 76.7% for Te 3d3/2O2) compared with the HBr-based solution (27.6% for Te 3d5/2O2 and 35.8% for Te 3d3/2O2). Spectral response measurements showed that the 59.5-keV peak of Am-241 remained under the same channel number for all three CdZnTe samples. While the BME-based solution gave a better performance of 7.15% full-width at half-maximum (FWHM) compared with 7.59% FWHM for the HBr-based solution, the latter showed a smaller variation in performance of 0.39% FWHM over 7 days compared with 0.69% for the BME-based solution.« less

  17. Radiative lifetimes of zincblende CdSe/CdS quantum dots

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gong, Ke; Martin, James E.; Shea-Rohwer, Lauren E.; Lu, Ping; Kelley, David F.

    2015-01-02

    Recent synthetic advances have made available very monodisperse zincblende CdSe/CdS quantum dots having near-unity photoluminescence quantum yields. Because of the absence of nonradiative decay pathways, accurate values of the radiative lifetimes can be obtained from time-resolved PL measurements. Radiative lifetimes can also be obtained from the Einstein relations, using the static absorption spectra and the relative thermal populations in the angular momentum sublevels. We found that one of the inputs into these calculations is the shell thickness, and it is useful to be able to determine shell thickness from spectroscopic measurements. We use an empirically corrected effective mass model tomore » produce a “map” of exciton wavelength as a function of core size and shell thickness. These calculations use an elastic continuum model and the known lattice and elastic constants to include the effect of lattice strain on the band gap energy. The map is in agreement with the known CdSe sizing curve and with the shell thicknesses of zincblende core/shell particles obtained from TEM images. Furthermore, if selenium–sulfur diffusion is included and lattice strain is omitted from the calculation then the resulting map is appropriate for wurtzite CdSe/CdS quantum dots synthesized at high temperatures, and this map is very similar to one previously reported (J. Am. Chem. Soc. 2009, 131, 14299). Radiative lifetimes determined from time-resolved measurements are compared to values obtained from the Einstein relations, and found to be in excellent agreement. For a specific core size (2.64 nm diameter, in the present case), radiative lifetimes are found to decrease with increasing shell thickness. Thus, this is similar to the size dependence of one-component CdSe quantum dots and in contrast to the size dependence in type-II quantum dots.« less

  18. Radiative lifetimes of zincblende CdSe/CdS quantum dots

    SciTech Connect (OSTI)

    Gong, Ke; Martin, James E.; Shea-Rohwer, Lauren E.; Lu, Ping; Kelley, David F.

    2015-01-02

    Recent synthetic advances have made available very monodisperse zincblende CdSe/CdS quantum dots having near-unity photoluminescence quantum yields. Because of the absence of nonradiative decay pathways, accurate values of the radiative lifetimes can be obtained from time-resolved PL measurements. Radiative lifetimes can also be obtained from the Einstein relations, using the static absorption spectra and the relative thermal populations in the angular momentum sublevels. We found that one of the inputs into these calculations is the shell thickness, and it is useful to be able to determine shell thickness from spectroscopic measurements. We use an empirically corrected effective mass model to produce a “map” of exciton wavelength as a function of core size and shell thickness. These calculations use an elastic continuum model and the known lattice and elastic constants to include the effect of lattice strain on the band gap energy. The map is in agreement with the known CdSe sizing curve and with the shell thicknesses of zincblende core/shell particles obtained from TEM images. Furthermore, if selenium–sulfur diffusion is included and lattice strain is omitted from the calculation then the resulting map is appropriate for wurtzite CdSe/CdS quantum dots synthesized at high temperatures, and this map is very similar to one previously reported (J. Am. Chem. Soc. 2009, 131, 14299). Radiative lifetimes determined from time-resolved measurements are compared to values obtained from the Einstein relations, and found to be in excellent agreement. For a specific core size (2.64 nm diameter, in the present case), radiative lifetimes are found to decrease with increasing shell thickness. Thus, this is similar to the size dependence of one-component CdSe quantum dots and in contrast to the size dependence in type-II quantum dots.

  19. Hiding a Heavy Higgs Boson at the 7 TeV LHC

    SciTech Connect (OSTI)

    Bai, Yang; Fan, JiJi; Hewett, JoAnne L.

    2012-03-20

    A heavy Standard Model Higgs boson is not only disfavored by electroweak precision observables but is also excluded by direct searches at the 7 TeV LHC for a wide range of masses. Here, we examine scenarios where a heavy Higgs boson can be made consistent with both the indirect constraints and the direct null searches by adding only one new particle beyond the Standard Model. This new particle should be a weak multiplet in order to have additional contributions to the oblique parameters. If it is a color singlet, we find that a heavy Higgs with an intermediate mass of 200-300 GeV can decay into the new states, suppressing the branching ratios for the standard model modes, and thus hiding a heavy Higgs at the LHC. If the new particle is also charged under QCD, the Higgs production cross section from gluon fusion can be reduced significantly due to the new colored particle one-loop contribution. Current collider constraints on the new particles allow for viable parameter space to exist in order to hide a heavy Higgs boson. We categorize the general signatures of these new particles, identify favored regions of their parameter space and point out that discovering or excluding them at the LHC can provide important indirect information for a heavy Higgs. Finally, for a very heavy Higgs boson, beyond the search limit at the 7 TeV LHC, we discuss three additional scenarios where models would be consistent with electroweak precision tests: including an additional vector-like fermion mixing with the top quark, adding another U(1) gauge boson and modifying triple-gauge boson couplings.

  20. Heliospheric influence on the anisotropy of TeV cosmic rays

    SciTech Connect (OSTI)

    Zhang, Ming; Zuo, Pingbing; Pogorelov, Nikolai

    2014-07-20

    This paper provides a theory of using Liouville's theorem to map the anisotropy of TeV cosmic rays seen at Earth using the particle distribution function in the local interstellar medium (LISM). The ultimate source of cosmic ray anisotropy is the energy, pitch angle, and spatial dependence of the cosmic ray distribution function in the LISM. Because young nearby cosmic ray sources can make a special contribution to the cosmic ray anisotropy, the anisotropy depends on the source age, distance and magnetic connection, and particle diffusion of these cosmic rays, all of which make the anisotropy sensitive to the particle energy. When mapped through the magnetic and electric field of a magnetohydrodynamic model heliosphere, the large-scale dipolar and bidirectional interstellar anisotropy patterns become distorted if they are seen from Earth, resulting in many small structures in the observations. Best fits to cosmic ray anisotropy measurements have allowed us to estimate the particle density gradient and pitch angle anisotropies in the LISM. It is found that the heliotail, hydrogen deflection plane, and the plane perpendicular to the LISM magnetic field play a special role in distorting cosmic ray anisotropy. These features can lead to an accurate determination of the LISM magnetic field direction and polarity. The effects of solar cycle variation, the Sun's coronal magnetic field, and turbulence in the LISM and heliospheric magnetic fields are minor but clearly visible at a level roughly equal to a fraction of the overall anisotropy amplitude. The heliospheric influence becomes stronger at lower energies. Below 1 TeV, the anisotropy is dominated by small-scale patterns produced by disturbances in the heliosphere.

  1. Investigating broadband variability of the TeV blazar 1ES 1959+650

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Aliu, E.; Archambault, S.; Arlen, T.; Aune, T.; Barnacka, A.; Beilicke, M.; Benbow, W.; Berger, K.; Bird, R.; Bouvier, A.; et al

    2014-12-03

    We summarize broadband observations of the TeV-emitting blazar 1ES 1959 650, including optical R-band observations by the robotic telescopes Super-LOTIS and iTelescope, UV observations by Swift UVOT, X-ray observations by the Swift X-ray Telescope, high-energy gamma-ray observations with the Fermi Large Area Telescope, and very-high-energy (VHE) gamma-ray observations by VERITAS above 315 GeV, all taken between 2012 April 17 and 2012 June 1 (MJD 56034 and 56079). The contemporaneous variability of the broadband spectral energy distribution is explored in the context of a simple synchrotron self Compton (SSC) model. In the SSC emission scenario, we find that the parameters requiredmore » to represent the high state are significantly different than those in the low state. Motivated by possible evidence of gas in the vicinity of the blazar, we also investigate a reflected emission model to describe the observed variability pattern. This model assumes that the non-thermal emission from the jet is reflected by a nearby cloud of gas, allowing the reflected emission to re-enter the blob and produce an elevated gamma-ray state with no simultaneous elevated synchrotron flux. The model applied here, although not required to explain the observed variability pattern, represents one possible scenario which can describe the observations. As applied to an elevated VHE state of 66% of the Crab Nebula flux, observed on a single night during the observation period, the reflected emission scenario does not support a purely leptonic non-thermal emission mechanism. The reflected model does, however, predict a reflected photon field with sufficient energy to enable elevated gamma-ray emission via pion production with protons of energies between 10 and 100 TeV.« less

  2. Investigating broadband variability of the TeV blazar 1ES 1959+650

    SciTech Connect (OSTI)

    Aliu, E.; Archambault, S.; Arlen, T.; Aune, T.; Barnacka, A.; Beilicke, M.; Benbow, W.; Berger, K.; Bird, R.; Bouvier, A.; Buckley, J. H.; Bugaev, V.; Cerruti, M.; Chen, X.; Ciupik, L.; Collins-Hughes, E.; Connolly, M. P.; Cui, W.; Dumm, J.; Eisch, J. D.; Falcone, A.; Federici, S.; Feng, Q.; Finley, J. P.; Fleischhack, H.; Fortin, P.; Fortson, L.; Furniss, A.; Galante, N.; Gillanders, G. H.; Griffin, S.; Griffiths, S. T.; Grube, J.; Gyuk, G.; Håkansson, N.; Hanna, D.; Holder, J.; Hughes, G.; Hughes, Z.; Humensky, T. B.; Johnson, C. A.; Kaaret, P.; Kar, P.; Kertzman, M.; Khassen, Y.; Kieda, D.; Krawczynski, H.; Krennrich, F.; Lang, M. J.; Madhavan, A. S.; Majumdar, P.; McArthur, S.; McCann, A.; Meagher, K.; Millis, J.; Moriarty, P.; Mukherjee, R.; Nelson, T.; Nieto, D.; de Bhróithe, A. O'Faoláin; Ong, R. A.; Otte, A. N.; Park, N.; Perkins, J. S.; Pohl, M.; Popkow, A.; Prokoph, H.; Quinn, J.; Ragan, K.; Rajotte, J.; Reyes, L. C.; Reynolds, P. T.; Richards, G. T.; Roache, E.; Sadun, A.; Santander, M.; Sembroski, G. H.; Shahinyan, K.; Sheidaei, F.; Smith, A. W.; Staszak, D.; Telezhinsky, I.; Theiling, M.; Tyler, J.; Varlotta, A.; Vassiliev, V. V.; Vincent, S.; Wakely, S. P.; Weekes, T. C.; Weinstein, A.; Welsing, R.; Wilhelm, A.; Williams, D. A.; Zitzer, and B.; Böttcher, M.; Fumagalli, M.

    2014-12-03

    We summarize broadband observations of the TeV-emitting blazar 1ES 1959 650, including optical R-band observations by the robotic telescopes Super-LOTIS and iTelescope, UV observations by Swift UVOT, X-ray observations by the Swift X-ray Telescope, high-energy gamma-ray observations with the Fermi Large Area Telescope, and very-high-energy (VHE) gamma-ray observations by VERITAS above 315 GeV, all taken between 2012 April 17 and 2012 June 1 (MJD 56034 and 56079). The contemporaneous variability of the broadband spectral energy distribution is explored in the context of a simple synchrotron self Compton (SSC) model. In the SSC emission scenario, we find that the parameters required to represent the high state are significantly different than those in the low state. Motivated by possible evidence of gas in the vicinity of the blazar, we also investigate a reflected emission model to describe the observed variability pattern. This model assumes that the non-thermal emission from the jet is reflected by a nearby cloud of gas, allowing the reflected emission to re-enter the blob and produce an elevated gamma-ray state with no simultaneous elevated synchrotron flux. The model applied here, although not required to explain the observed variability pattern, represents one possible scenario which can describe the observations. As applied to an elevated VHE state of 66% of the Crab Nebula flux, observed on a single night during the observation period, the reflected emission scenario does not support a purely leptonic non-thermal emission mechanism. The reflected model does, however, predict a reflected photon field with sufficient energy to enable elevated gamma-ray emission via pion production with protons of energies between 10 and 100 TeV.

  3. Investigating Broadband Variability of the TeV Blazar 1ES 1959+650

    SciTech Connect (OSTI)

    Aliu, E.; Archambault, S.; Arlen, T.; Aune, T.; Barnacka, A.; Beilicke, M.; Benbow, W.; Berger, K.; Bird, R.; Bouvier, A.; Buckley, J. H.; Bugaev, V.; Cerruti, M.; Chen, X.; Ciupik, L.; Collins-Hughes, E.; Connolly, M. P.; Cui, W.; Dumm, J.; Eisch, J. D.; Falcone, A.; Federici, S.; Feng, Q.; Finley, J. P.; Fleischhack, H.; Hanna, D.; Holder, J.; Hughes, G.; Hughes, Z.; Humensky, T. B.; Johnson, C. A.; Kaaret, P.; Kar, P.; Kertzman, M.; Khassen, Y.; Kieda, D.; Krawczynski, H.; Krennrich, F.; Lang, M. J.; Madhavan, A. S.; Majumdar, P.; McArthur, S.; McCann, A.; Meagher, K.; Millis, J.; Moriarty, P.; Mukherjee, R.; Nelson, T.; Nieto, D.; O'Faolain de Bhroithe, A.; Ong, R. A.; Otte, A. N.; Park, N.; Perkins, J. S.; Pohl, M.; Popkow, A.; Prokoph, H.; Quinn, J.; Ragan, K.; Rajotte, J.; Reyes, L. C.; Reynolds, P. T.; Richards, G. T.; Roache, E.; Sadun, A.; Santander, M.; Sembroski, G. H.; Shahinyan, K.; Sheidaei, F.; Smith, A. W.; Staszak, D.; Telezhinsky, I.; Theiling, M.; Tyler, J.; Varlotta, A.; Vassiliev, V. V.; Vincent, S.; Wakeley, S. P.; Weekes, T. C.; Weinstein, A.; Welsing, R.; Wilhelm, A.; Williams, D. A.; Zitzer, B.; Boettcher, M.; Fumagalli, M.

    2014-12-03

    We summarize broadband observations of the TeV-emitting blazar 1ES 1959 650, including optical R-band observations by the robotic telescopes Super-LOTIS and iTelescope, UV observations by Swift Ultraviolet and Optical Telescope, X-ray observations by the Swift X-ray Telescope, high-energy gamma-ray observations with the Fermi Large Area Telescope, and very-high-energy (VHE) gamma-ray observations by VERITAS above 315 GeV, all taken between 2012 April 17 and 2012 June 1 (MJD 56034 and 56079). The contemporaneous variability of the broadband spectral energy distribution is explored in the context of a simple synchrotron self Compton (SSC) model. In the SSC emission scenario, we find that the parameters required to represent the high state are significantly different than those in the low state. Motivated by possible evidence of gas in the vicinity of the blazar, we also investigate a reflected emission model to describe the observed variability pattern. This model assumes that the non-thermal emission from the jet is reflected by a nearby cloud of gas, allowing the reflected emission to re-enter the blob and produce an elevated gamma-ray state with no simultaneous elevated synchrotron flux. The model applied here, although not required to explain the observed variability pattern, represents one possible scenario which can describe the observations. As applied to an elevated VHE state of 66% of the Crab Nebula flux, observed on a single night during the observation period, the reflected emission scenario does not support a purely leptonic non-thermal emission mechanism. The reflected model does, however, predict a reflected photon field with sufficient energy to enable elevated gamma-ray emission via pion production with protons of energies between 10 and 100 TeV.

  4. Investigation of Fe:ZnSe laser in pulsed and repetitively pulsed regimes

    SciTech Connect (OSTI)

    Velikanov, S D; Zaretskiy, N A; Zotov, E A; Maneshkin, A A; Chuvatkin, R S; Yutkin, I M; Kozlovsky, V I; Korostelin, Yu V; Krokhin, O N; Podmar'kov, Yu P; Savinova, S A; Skasyrsky, Ya K; Frolov, M P

    2015-01-31

    The characteristics of a Fe:ZnSe laser pumped by a single-pulse free-running Er : YAG laser and a repetitively pulsed HF laser are presented. An output energy of 4.9 J is achieved in the case of liquid-nitrogen cooling of the Fe{sup 2+}:ZnSe active laser element longitudinally pumped by an Er:YAG laser with a pulse duration of 1 ms and an energy up to 15 J. The laser efficiency with respect to the absorbed energy is 47%. The output pulse energy at room temperature is 53 mJ. The decrease in the output energy is explained by a strong temperature dependence of the upper laser level lifetime and by pulsed heating of the active element. The temperature dependence of the upper laser level lifetime is used to determine the pump parameters needed to achieve high pulse energies at room temperature. Stable repetitively-pulsed operation of the Fe{sup 2+}:ZnSe laser at room temperature with an average power of 2.4 W and a maximum pulse energy of 14 mJ is achieved upon pumping by a 1-s train of 100-ns HF laser pulses with a repetition rate of 200 Hz. (lasers)

  5. Cr-doped TiSe2 - A layered dichalcogenide spin glass

    SciTech Connect (OSTI)

    Luo, Huixia; Tao, Jing; Krizan, Jason W.; Seibel, Elizabeth M.; Xie, Weiwei; Sahasrabudhe, Girija S.; Bergman, Susanna L.; Phelan, Brendan F.; Wang, Zhen; Zhang, Jiandi; Cava, R. J.

    2015-09-17

    We report the magnetic characterization of the Cr-doped layered dichalcogenide TiSe2. The temperature dependent magnetic susceptibilities are typical of those seen in geometrically frustrated insulating antiferromagnets. The Cr moment is close to the spin-only value, and the Curie–Weiss temperatures (θcw) are between –90 and –230 K. Freezing of the spin system, which is glassy, characterized by peaks in the ac and dc susceptibility and specific heat, does not occur until below T/θcw = 0.05. The CDW transition seen in the resistivity for pure TiSe2 is still present for 3% Cr substitution but is absent by 10% substitution, above which the materials are metallic and p-type. Structural refinements, magnetic characterization, and chemical considerations indicate that the materials are of the type Ti1–xCrxSe2-x/2 for 0 ≤ x ≤ 0.6.

  6. Blue and green electroluminescence from CdSe nanocrystal quantum-dot-quantum-wells

    SciTech Connect (OSTI)

    Lu, Y. F.; Cao, X. A.

    2014-11-17

    CdS/CdSe/ZnS quantum dot quantum well (QDQW) nanocrystals were synthesized using the successive ion layer adsorption and reaction technique, and their optical properties were tuned by bandgap and strain engineering. 3-monolayer (ML) CdSe QWs emitted blue photoluminescence at 467?nm with a spectral full-width-at-half-maximum of ?30?nm. With a 3 ML ZnS cladding layer, which also acts as a passivating and strain-compensating layer, the QDQWs acquired a ?35% quantum yield of the QW emission. Blue and green electroluminescence (EL) was obtained from QDQW light-emitting devices with 34.5 ML CdSe QWs. It was found that as the peak blueshifted, the overall EL was increasingly dominated by defect state emission due to poor hole injection into the QDQWs. The weak EL was also attributed to strong field-induced charge separation resulting from the unique QDQW geometry, weakening the oscillator strength of optical transitions.

  7. Photoinduced Surface Oxidation and Its Effect on the Exciton Dynamics of CdSe Quantum Dots

    SciTech Connect (OSTI)

    Hines, Douglas A.; Becker, Matthew A.; Kamat, Prashant V.

    2012-11-14

    With increased interest in semiconductor nanoparticles for use in quantum dot solar cells there comes a need to understand the long-term photostability of such materials. Colloidal CdSe quantum dots (QDs) were suspended in toluene and stored in combinations of light/dark and N{sub 2}/O{sub 2} to simulate four possible benchtop storage environments. CdSe QDs stored in a dark, oxygen-free environment were observed to better retain their optical properties over the course of 90 days. The excited state lifetimes, determined through femtosecond transient absorption spectroscopy, of air-equilibrated samples exposed to light exhibit a decrease in average lifetime (0.81 ns) when compared to samples stored in a nitrogen/dark environment (8.3 ns). A photoetching technique commonly used for controlled reduction of QD size was found to induce energetic trap states to CdSe QDs and accelerate the rate of electron-hole recombination. X-ray absorption near edge structure (XANES) analysis confirms surface oxidation, the extent of which is shown to be dependent on the thickness of the ligand shell.

  8. Cr-doped TiSe2 - A layered dichalcogenide spin glass

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Luo, Huixia; Tao, Jing; Krizan, Jason W.; Seibel, Elizabeth M.; Xie, Weiwei; Sahasrabudhe, Girija S.; Bergman, Susanna L.; Phelan, Brendan F.; Wang, Zhen; Zhang, Jiandi; et al

    2015-09-17

    We report the magnetic characterization of the Cr-doped layered dichalcogenide TiSe2. The temperature dependent magnetic susceptibilities are typical of those seen in geometrically frustrated insulating antiferromagnets. The Cr moment is close to the spin-only value, and the Curie–Weiss temperatures (θcw) are between –90 and –230 K. Freezing of the spin system, which is glassy, characterized by peaks in the ac and dc susceptibility and specific heat, does not occur until below T/θcw = 0.05. The CDW transition seen in the resistivity for pure TiSe2 is still present for 3% Cr substitution but is absent by 10% substitution, above which themore » materials are metallic and p-type. Structural refinements, magnetic characterization, and chemical considerations indicate that the materials are of the type Ti1–xCrxSe2-x/2 for 0 ≤ x ≤ 0.6.« less

  9. Novel thin-film CuInSe sub 2 fabrication

    SciTech Connect (OSTI)

    Mooney, G.D.; Hermann, A.M. )

    1992-03-01

    This report describes research in Rapid Thermal Processing (RTP), a process that allows the formation of CuInSe{sub 2} without the use of H{sub 2}Se. RTP is a well-established method of rapidly achieving temperatures necessary to melt and recrystallize materials such as Si and and silicides. RTP processes can rapidly and uniformly heat large surface areas to hundreds of degrees Celsius. RTP is the most promising method of rapid recrystallization studied to date, being readily scalable from the research to the production level. The approach to the experiment was divided into two sections: (1) fabricating the precursor film and (2) processing the precursor film. The objective of the first phase of the work was to fabricate the thin films by RTP, then fully characterize them, to demonstrate the viability of the process as a method by which to make device-quality CuInSe{sub 2}. The second phase was to demonstrate that material made by this method could be used to make an active photovoltaic device. 24 refs.

  10. X-ray irradiation induced changes in electron transport in stabilized a-Se photoconductors

    SciTech Connect (OSTI)

    Walornyj, M.; Kasap, S. O.

    2013-12-07

    We have examined the effect of high-dose x-ray irradiation on electron transport in stabilized amorphous selenium (a-Se) x-ray photoconductive films (of the type used in x-ray image detectors) by measuring the electron lifetime ?{sub e} through interrupted-field time-of-flight experiments. X-ray induced effects have been examined through two types of experiments. In recovery experiments, the a-Se was preirradiated with and without an applied field (5 V/?m) during irradiation with sufficient dose (typically ?20 Gy at 21 C) to significantly reduce the electron lifetime by ?50%, and then the recovery of the lifetime was monitored as a function of time at three different temperatures, 10 C, 21 C, and 35 C. The lifetime recovery kinetics was exponential with a relaxation time ?{sub r} that is thermally activated with an activation energy of 1.66 eV. ?{sub r} is a few hours at 21 C and only a few minutes at 35 C. In experiments examining the irradiation induced effects, the a-Se film was repeatedly exposed to x-ray radiation and the changes in the drift mobility and lifetime were monitored as a function of accumulated dose D. There was no observable change in the drift mobility. At 21 C, the concentration of x-ray induced deep traps (or capture centers), N{sub d}, increases linearly with D (N{sub d} ? D) whereas at 35 C, the recovery process prevents a linear increase in N{sub d} with D, and N{sub d} saturates. In all cases, even under high dose irradiation (?50 Gy), the lifetime was recoverable to its original equilibrium (pre-exposure) value within a few relaxation times.

  11. Experimental study of the valence band of Bi2Se3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Heremans, Joseph; Gao, Yibin; He, Bin; Androulakis, Yiannis; Parker, David S

    2014-01-01

    The valence band of Bi2Se3 is investigated with Shubnikov - de Haas measurements, galvanomagnetic and thermoelectric transport. At low hole concentration, the hole Fermi surface is closed and box-like, but at higher concentrations it develops tube-like extensions that are open. The experimentally determined density-of-states effective mass is lighter than density-functional theory calculations predict; while we cannot give a definitive explanation for this, we suspect that the theory may lack sufficient precision to compute room-temperature transport properties, such as the Seebeck coefficient, in solids in which there are Van der Waals interlayer bonds.

  12. Microsized structures assisted nanostructure formation on ZnSe wafer by femtosecond laser irradiation

    SciTech Connect (OSTI)

    Wang, Shutong; Feng, Guoying E-mail: zhoush@scu.edu.cn

    2014-12-22

    Micro/nano patterning of ZnSe wafer is demonstrated by femtosecond laser irradiation through a diffracting pinhole. The irradiation results obtained at fluences above the ablation threshold are characterized by scanning electron microscopy. The microsized structure with low spatial frequency has a good agreement with Fresnel diffraction theory. Laser induced periodic surface structures and laser-induced periodic curvelet surface structures with high spatial frequency have been found on the surfaces of microsized structures, such as spikes and valleys. We interpret its formation in terms of the interference between the reflected laser field on the surface of the valley and the incident laser pulse.

  13. Determination of the Exciton Binding Energy in CdSe Quantum Dots

    SciTech Connect (OSTI)

    Meulenberg, R; Lee, J; Wolcott, A; Zhang, J; Terminello, L; van Buuren, T

    2009-10-27

    The exciton binding energy (EBE) in CdSe quantum dots (QDs) has been determined using x-ray spectroscopy. Using x-ray absorption and photoemission spectroscopy, the conduction band (CB) and valence band (VB) edge shifts as a function of particle size have been determined and combined to obtain the true band gap of the QDs (i.e. without and exciton). These values can be compared to the excitonic gap obtained using optical spectroscopy to determine the EBE. The experimental EBE results are compared with theoretical calculations on the EBE and show excellent agreement.

  14. Multiband semimetallic electronic structure of superconducting Ta2PdSe5

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Singh, David Joseph

    2015-04-24

    We report the electronic structure and related properties of the superconductor Ta2PdSe5 as determined from density functional calculations. The Fermi surface has two disconnected sheets, both derived from bands of primarily chalcogenide p states. These are a corrugated hole cylinder and a heavier complex shaped electron sheet. The sheets contain 0.048 holes and a compensating number of electrons per formula unit, making the material a semimetallic superconductor. The results support the presence of two band superconductivity, although a discrepancy in the specific heat is noted. This discrepancy is discussed as a possible consequence of Pd deficiency in samples.

  15. ScanningTunneling Luminescence of Grain Boundaries in Cu(In,Ga)Se2

    SciTech Connect (OSTI)

    Romero, M. J.; Jiang, C.-S.; Al-Jassim, M. M.; Noufi, R.

    2005-01-01

    At the Laboratory, photon emission in semiconductors has been mapped in the nanoscale using scanning tunneling microscopy (STM). In this Solar Program Review Meeting, we report on the latest results obtained in Cu(In,Ga)Se2 (CIGS) thin films by this adapted STM. Scanning tunneling luminescence (STL) spectroscopy suggests that photons are emitted near the surface of CIGS. STL is excited either by (1) diffusion of tunneling electrons and subsequent recombination with available holes in CIGS or (2) impact ionization by hot electrons. Which process becomes predominant depends on the voltage applied to the STM tip. Photon mapping shows electronically active, extended defects near the surface of CIGS thin films.

  16. Synthesis of monodispersed CdSe nanocrystals in poly(styrene-alt-maleic anhydride) at room temperature

    SciTech Connect (OSTI)

    Liu, S.H.; Qian, X.F.; Yuan, J.Y.; Yin, J.; He, R.; Zhu, Z.K

    2003-07-14

    Nanocomposite of CdSe/poly(styrene-alt-maleic anhydride) (PSM) was successfully prepared via an in situ reaction process at room temperature and ambient pressure. Transmission electron microscopy (TEM) analysis revealed that CdSe nanoparticles with a small size and narrow size distribution were obtained. The obtained nanocomposite was also characterized by FT-IR, XRD, ultraviolet-visible, and fluorescence spectroscopy.

  17. Tensile Strain Switched Ferromagnetism in Layered NbS2 and NbSe2

    SciTech Connect (OSTI)

    Zhou, Yungang; Wang, Zhiguo; Yang, Ping; Zu, Xiaotao; Yang, Li; Sun, Xin; Gao, Fei

    2012-11-01

    Developing approaches to effectively induce and control the magnetic states is critical to the use of magnetic nanostructures in quantum information devices but is still challenging. Here we have demonstrated, by employing the density functional theory calculations, an existence of infinite magnetic sheets with structural integrity and magnetic homogeneity. Examination from a series of transition metal dichalcogenides shows that the biaxial tensile strained NbS2 and NbSe2 structures can be magnetized with a ferromagnetic character due to the competitive effects of through-bond interaction and through-space interaction. The estimated Curie temperatures (387 and 542 K under the 10% strain for NbS2 and NbSe2 structures, respectively) suggest that the unique ferromagnetic character can be achieved above room temperature. The self-exchange of population between 4d orbitals of Nb atom that leads to the exchange splitting is the mechanism behind the transition of the spin moment. The induced magnetic moments can be significantly enhanced by the tensile strain, even giving rise to half-metallic character with the strong spin polarization around the Fermi level. Given the recent progress that the desired strain can be achieved on two-dimensional nanostructures, such as graphene and BN layer in a controlled way, we believe that our calculated results are suitable for experimental verification and implementation opening a new path to explore the spintronics in pristine two-dimensional nanostructures.

  18. Polytypism, polymorphism, and superconductivity in TaSe2-xTex

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Luo, Huixia; Tao, Jing; Xie, Weiwei; Inoue, Hiroyuki; Gyenis, Andras; Krizan, Jason W.; Yazdani, Ali; Zhu, Yimei; Cava, R. J.

    2015-03-17

    Polymorphism in materials often leads to significantly different physical properties - the rutile and anatase polymorphs of TiO? are a prime example. Polytypism is a special type of polymorphism, occurring in layered materials when the geometry of a repeating structural layer is maintained but the layer stacking sequence of the overall crystal structure can be varied; SiC is an example of a material with many polytypes. Although polymorphs can have radically different physical properties, it is much rarer for polytypism to impact physical properties in a dramatic fashion. Here we study the effects of polytypism and polymorphism on the superconductivitymoreof TaSe?, one of the archetypal members of the large family of layered dichalcogenides. We show that it is possible to access 2 stable polytypes and 2 stable polymorphs in the TaSe2-xTex solid solution, and find that the 3R polytype shows a superconducting transition temperature that is between 6 and 17 times higher than that of the much more commonly found 2H polytype. The reason for this dramatic change is not apparent, but we propose that it arises either from a remarkable dependence of Tc on subtle differences in the characteristics of the single layers present, or from a surprising effect of the layer stacking sequence on electronic properties that instead are expected to be dominated by the properties of a single layer in materials of this kind.less

  19. Dependence of superconductivity in CuxBi?Se? on quenching conditions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Schneeloch, J. A.; Zhong, R. D.; Xu, Z. J.; Gu, G. D.; Tranquada, J. M.

    2015-04-20

    Topological superconductivity, implying gapless protected surface states, has recently been proposed to exist in the compound CuxBi?Se?. Unfortunately, low diamagnetic shielding fractions and considerable inhomogeneity have been reported in this compound. In an attempt to understand and improve on the finite superconducting volume fractions, we have investigated the effects of various growth and post-annealing conditions. With a melt-growth (MG) method, diamagnetic shielding fractions of up to 56% in Cu???Bi?Se? have been obtained, the highest value reported for this method. We investigate the efficacy of various quenching and annealing conditions, finding that quenching from temperatures above 560C is essential for superconductivity,morewhereas quenching from lower temperatures or not quenching at all is detrimental. A modified floating zone (FZ) method yielded large single crystals but little superconductivity. Even after annealing and quenching, FZ-grown samples had much less chance of being superconducting than MG-grown samples. From the low shielding fractions in FZ-grown samples and the quenching dependence, we suggest that a metastable secondary phase having a small volume fraction in most of the samples may be responsible for the superconductivity.less

  20. The role of ligands in the optical and electronic spectra of CdSe nanoclusters

    SciTech Connect (OSTI)

    Kilina, Svletana; Sergei, Ivanov A; Victor, Klimov I; Sergei, Tretiak

    2008-01-01

    We investigate the impact of ligands on morphology, electronic structure, and optical response of the Cd33Se33 cluster, which already overlapps in size with the smallest synthesized CdSe quantum dots (QDs). Our Density Functional Theory (DFT) calculations demonstrate significant surface reorganization both for the bare cluster and for the cluster capped by amine and phosphine oxide ligand models. We observe strong surface-ligand interactions leading to substantial charge redistribution and polarization effects on the surface. This effect results in the appearance of hybridized states, where the electronic density is spread over the cluster and the ligands. Neither the ligand's nor hybridized molecular orbitals appear as trap states inside or near the band gap of the QD. Instead, being optically dark, dense hybridized states from the edges of the valence and the conduction bands could open new relaxation channels for high energy photoexcitations. Comparing quantum dots passivated by different ligands, we found that hybridized states are denser in at the edge of the conduction band of the cluster ligated with phosphine oxide molecules than that with primary amines. Such a different manifestation of ligand binding may potentially lead to the faster electron relaxation in dots passivated by phosphine oxide than by amine ligands, which is in agreement with experimental data.

  1. Electronic Structure of Ligated CdSe Clusters: Dependence on DFT Methodology

    SciTech Connect (OSTI)

    Albert, VV; Ivanov, SA; Tretiak, S; Kilina, SV

    2011-07-07

    Simulations of ligated semiconductor quantum dots (QDs) and their physical properties, such as morphologies, QD-ligand interactions, electronic structures, and optical transitions, are expected to be very sensitive to computational methodology. We utilize Density Functional Theory (DFT) and systematically study how the choice of density functional, atom-localized basis set, and a solvent affects the physical properties of the Cd{sub 33}Se{sub 33} cluster ligated with a trimethyl phosphine oxide ligand. We have found that qualitative performance of all exchange-correlation (XC) functionals is relatively similar in predicting strong QD-ligand binding energy ({approx}1 eV). Additionally, all functionals predict shorter Cd-Se bond lengths on the QD surface than in its core, revealing the nature and degree of QD surface reconstruction. For proper modeling of geometries and QD-ligand interactions, however, augmentation of even a moderately sized basis set with polarization functions (e.g., LANL2DZ* and 6-31G*) is very important. A polar solvent has very significant implications for the ligand binding energy, decreasing it to 0.2-0.5 eV. However, the solvent model has a minor effect on the optoelectronic properties, resulting in persistent blue shifts up to {approx}0.3 eV of the low-energy optical transitions. For obtaining reasonable energy gaps and optical transition energies, hybrid XC functionals augmented by a long-range Hartree-Fock orbital exchange have to be applied.

  2. Effect of Ligands on Characteristics of (CdSe)13 Quantum Dot

    SciTech Connect (OSTI)

    Gao, Yang; Zhou, Bo; Kang, Seung-gu; Xin, Minsi; Yang, Ping; Dai, Xing; Wang, Zhigang; Zhou, Ruhong

    2014-01-01

    The widespread applications of quantum dots (QDs) have spurred an increasing interest in the study of their coating ligands, which can not only protect the electronic structures of the central QDs, but also control their permeability through biological membranes with both size and shape. In this work, we have used density functional theory (DFT) to investigate the electronic structures of (CdSe)13 passivated by OPMe2(CH2)nMe ligands with different lengths and various numbers of branches (Me=methyl group, n = 0, 1-3). Our results show that the absorption peak in the ultraviolet-visible (UV-vis) spectra displays a clear blue-shift, on the scale of ~100 nm, upon the binding of ligands. Once the total number of ligands bound with (CdSe)13 reached a saturated number (9 or 10), no more blue-shift occurred in the absorption peak in the UV-vis spectra. On the other hand, the aliphatic chain length of ligands has a negligible effect on the optical properties of the QD core. Analyses of the bonding characteristics confirm that optical transitions are dominantly governed by the central QD core rather than the organic passivation. Interestingly, the density of states (DOS) share similar characteristics as vibrational spectra, even though there is no coordination vibration mode between the ligands and the central QD. These findings might provide insights on the material design for the passivation of quantum dots for biomedical applications.

  3. Lattice dynamics of BaFe2X3(X=S,Se) compounds

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Popović, Z. V.; Šćepanović, M.; Lazarević, N.; Opačić, M.; Radonjić, M. M.; Tanasković, D.; Lei, Hechang; Petrovic, C.

    2015-02-27

    We present the Raman scattering spectra of the S=2 spin ladder compounds BaFe₂X₃ (X=S,Se) in a temperature range between 20 and 400 K. Although the crystal structures of these two compounds are both orthorhombic and very similar, they are not isostructural. The unit cell of BaFe₂S₃ (BaFe₂Se₃) is base-centered Cmcm (primitive Pnma), giving 18 (36) modes to be observed in the Raman scattering experiment. We have detected almost all Raman active modes, predicted by factor group analysis, which can be observed from the cleavage planes of these compounds. Assignment of the observed Raman modes of BaFe₂S(Se)₃ is supported by themore » lattice dynamics calculations. The antiferromagnetic long-range spin ordering in BaFe₂Se₃ below TN=255K leaves a fingerprint both in the A1g and B3g phonon mode linewidth and energy.« less

  4. Nonmonotonic pressure evolution of the upper critical field in superconducting FeSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kaluarachchi, Udhara S.; Taufour, Valentin; Böhmer, Anna E.; Tanatar, Makariy A.; Bud'ko, Sergey L.; Kogan, Vladimir G.; Prozorov, Ruslan; Canfield, Paul C.

    2016-02-01

    The pressure dependence of the upper critical field, Hc2,c, of single crystalline FeSe was studied using measurements of the interplane resistivity, ρc, in magnetic fields parallel to tetragonal c axis. Hc2,c(T) curves obtained under hydrostatic pressures up to 1.56 GPa, the range over which the superconducting transition temperature, Tc, of FeSe exhibits a nonmonotonic dependence with local maximum at p1 ≈ 0.8 GPa and local minimum at p2 ≈ 1.2 GPa. The slope of the upper critical field at Tc,(dHc2,c/dT)Tc, also exhibits a nonmonotonic pressure dependence with distinct changes at p1 and p2. For p < p1 the slope canmore » be described within a multiband orbital model. For both p1 < p < p2 and p > p2 the slope is in good semiquantitative agreement with a single band, orbital Helfand-Werthamer theory with Fermi velocities determined from Shubnikov–de Haas measurements. Lastly, this finding indicates that Fermi surface changes are responsible for the local minimum of Tc(p) at p2 ≈ 1.2 GPa.« less

  5. Biexciton formation and exciton coherent coupling in layered GaSe

    SciTech Connect (OSTI)

    Dey, P.; Paul, J.; Stevens, C. E.; Glikin, N.; Karaiskaj, D.; Moody, G.; Kovalyuk, Z. D.; Kudrynskyi, Z. R.; Romero, A. H.; Cantarero, A.; Hilton, D. J.

    2015-06-07

    Nonlinear two-dimensional Fourier transform (2DFT) and linear absorption spectroscopy are used to study the electronic structure and optical properties of excitons in the layered semiconductor GaSe. At the 1s exciton resonance, two peaks are identified in the absorption spectra, which are assigned to splitting of the exciton ground state into the triplet and singlet states. 2DFT spectra acquired for co-linear polarization of the excitation pulses feature an additional peak originating from coherent energy transfer between the singlet and triplet. At cross-linear polarization of the excitation pulses, the 2DFT spectra expose a new peak likely originating from bound biexcitons. The polarization dependent 2DFT spectra are well reproduced by simulations using the optical Bloch equations for a four level system, where many-body effects are included phenomenologically. Although biexciton effects are thought to be strong in this material, only moderate contributions from bound biexciton creation can be observed. The biexciton binding energy of ?2 meV was estimated from the separation of the peaks in the 2DFT spectra. Temperature dependent absorption and 2DFT measurements, combined with ab initio theoretical calculations of the phonon spectra, indicate strong interaction with the A{sub 1}{sup ?} phonon mode. Excitation density dependent 2DFT measurements reveal excitation induced dephasing and provide a lower limit for the homogeneous linewidth of the excitons in the present GaSe crystal.

  6. Probing Interfacial Electronic States in CdSe Quantum Dots using Second Harmonic Generation Spectroscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Doughty, Benjamin L; Ma, Yingzhong; Shaw, Robert W

    2015-01-01

    Understanding and rationally controlling the properties of nanomaterial surfaces is a rapidly expanding field of research due to the dramatic role they play on the optical and electronic properties vital to light harvesting, emitting and detection technologies. This information is essential to the continued development of synthetic approaches designed to tailor interfaces for optimal nanomaterial based device performance. In this work, closely spaced electronic excited states in model CdSe quantum dots (QDs) are resolved using second harmonic generation (SHG) spectroscopy, and the corresponding contributions from surface species to these states are assessed. Two distinct spectral features are observed in themore » SHG spectra, which are not readily identified in linear absorption and photoluminescence excitation spectra. These features include a weak band at 395 6 nm, which coincides with transitions to the 2S1/2 1Se state, and a much more pronounced band at 423 4 nm arising from electronic transitions to the 1P3/2 1Pe state. Chemical modification of the QD surfaces through oxidation resulted in disappearance of the SHG band corresponding to the 1P3/2 1Pe state, indicating prominent surface contributions. Signatures of deep trap states localized on the surfaces of the QDs are also observed. We further find that the SHG signal intensities depend strongly on the electronic states being probed and their relative surface contributions, thereby offering additional insight into the surface specificity of SHG signals from QDs.« less

  7. Properties of Cu(In,Ga,Al)Se{sub 2} thin films fabricated by magnetron sputtering

    SciTech Connect (OSTI)

    Hameed, Talaat A.; Cao, Wei; Mansour, Bahiga A.; Elzawaway, Inas K.; Abdelrazek, El-Metwally M.; Elsayed-Ali, Hani E.

    2015-05-15

    Cu(In,Ga,Al)Se{sub 2} (CIGAS) thin films were studied as an alternative absorber layer material to Cu(In{sub x}Ga{sub 1?x})Se{sub 2}. CIGAS thin films with varying Al content were prepared by magnetron sputtering on Si(100) and soda-lime glass substrates at 350?C, followed by postdeposition annealing at 520?C for 5 h in vacuum. The film composition was measured by an electron probe microanalyzer while the elemental depth profiles were determined by secondary ion mass spectrometry. X-ray diffraction studies indicated that CIGAS films are single phase with chalcopyrite structure and that the (112) peak clearly shifts to higher 2? values with increasing Al content. Scanning electron microscopy images revealed dense and well-defined grains, as well as sharp CIGAS/Si(100) interfaces for all films. Atomic force microscopy analysis indicated that the roughness of CIGAS films decreases with increasing Al content. The bandgap of CIGAS films was determined from the optical transmittance and reflectance spectra and was found to increase as Al content increased.

  8. Characterization and device performance of (AgCu)(InGa)Se2 absorber layers

    SciTech Connect (OSTI)

    Hanket, Gregory; Boyle, Jonathan H.; Shafarman, William N.

    2009-06-08

    The study of (AgCu)(InGa)Se2 absorber layers is of interest in that Ag-chalcopyrites exhibit both wider bandgaps and lower melting points than their Cu counterparts. (AgCu)(InGa)Se2 absorber layers were deposited over the composition range 0 < Ag/(Ag+Cu) < 1 and 0.3 < Ga/(In+Ga) < 1.0 using a variety of elemental co-evaporation processes. Films were found to be singlephase over the entire composition range, in contrast to prior studies. Devices with Ga content 0.3 < Ga/(In+Ga) <0.5 tolerated Ag incorporation up to Ag/(Ag+Cu) = 0.5 without appreciable performance loss. Ag-containing films with Ga/(In+Ga) = 0.8 showed improved device characteristics over Cu-only control samples, in particular a 30-40% increase in short-circuit current. An absorber layer with composition Ag/(Ag+Cu) = 0.75 and Ga/(In+Ga) = 0.8 yielded a device with VOC = 890 mV, JSC = 20.5mA/cm2, fill factor = 71.3%, and ? = 13.0%.

  9. ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping

    DOE Patents [OSTI]

    Ramanathan, Kannan; Hasoon, Falah S.; Asher, Sarah E.; Dolan, James; Keane, James C.

    2007-02-20

    A process for making a thin film ZnO/Cu(InGa)Se.sub.2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se.sub.2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se.sub.2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se.sub.2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.sub.2.

  10. Migrating data from TcSE to DOORS : an evaluation of the T-Plan Integrator software application.

    SciTech Connect (OSTI)

    Post, Debra S.; Manzanares, David A.; Taylor, Jeffrey L.

    2011-02-01

    This report describes our evaluation of the T-Plan Integrator software application as it was used to transfer a real data set from the Teamcenter for Systems Engineering (TcSE) software application to the DOORS software application. The T-Plan Integrator was evaluated to determine if it would meet the needs of Sandia National Laboratories to migrate our existing data sets from TcSE to DOORS. This report presents the struggles of migrating data and focuses on how the Integrator can be used to map a data set and its data architecture from TcSE to DOORS. Finally, this report describes how the bulk of the migration can take place using the Integrator; however, about 20-30% of the data would need to be transferred from TcSE to DOORS manually. This report does not evaluate the transfer of data from DOORS to TcSE.

  11. Search for high-mass diphoton resonances in pp collisions ats=8 TeVwith the ATLAS detector

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Aad, G.; Abbott, B.; Abdallah, J.; Abdel Khalek, S.; Abdinov, O.; Aben, R.; Abi, B.; Abolins, M.; AbouZeid, O. S.; Abramowicz, H.; et al

    2015-08-14

    This article describes a search for high-mass resonances decaying to a pair of photons using a sample of 20.3 fb-1 of pp collisions at s√=8 TeV recorded with the ATLAS detector at the Large Hadron Collider. The data are found to be in agreement with the Standard Model prediction, and limits are reported in the framework of the Randall-Sundrum model. This theory leads to the prediction of graviton states, the lightest of which could be observed at the Large Hadron Collider. A lower limit of 2.66 (1.41) TeV at 95% confidence level is set on the mass of the lightestmore » graviton for couplings of k/M¯¯Pl=0.1 (0.01).« less

  12. Blinking suppression of CdTe quantum dots on epitaxial graphene and the analysis with Marcus electron transfer

    SciTech Connect (OSTI)

    Hirose, Takuya; Tamai, Naoto, E-mail: tamai@kwansei.ac.jp [Department of Chemistry, School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337 (Japan); Kutsuma, Yasunori; Kurita, Atsusi; Kaneko, Tadaaki [Department of Physics, School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337 (Japan)

    2014-08-25

    We have prepared epitaxial graphene by a Si sublimation method from 4H-SiC. Single-particle spectroscopy of CdTe quantum dots (QDs) on epitaxial graphene covered with polyvinylpyrrolidone (PVP) or polyethylene glycol (PEG) showed the suppression of luminescence blinking and ?10 times decreased luminescence intensity as compared with those on a glass. The electronic coupling constant, H{sub 01}, between CdTe QDs and graphene was calculated to be (3.3??0.4)??10{sup 2?}cm{sup ?1} in PVP and (3.7??0.8)??10{sup 2?}cm{sup ?1} in PEG based on Marcus theory of electron transfer and Tang-Marcus model of blinking with statistical distribution.

  13. Search for Z? events with large missing transverse energy in pp? collisions at ?s=1.96 TeV

    SciTech Connect (OSTI)

    Abazov, V. M.; Abbott, B.; Acharya, B. S.; Adams, M.; Adams, T.; Alexeev, G. D.; Alkhazov, G.; Alton, A.; Alverson, G.; Aoki, M.; Askew, A.; Atkins, S.; Augsten, K.; Avila, C.; Badaud, F.; Bagby, L.; Baldin, B.; Bandurin, D. V.; Banerjee, S.; Barberis, E.; Baringer, P.; Barreto, J.; Bartlett, J. F.; Bassler, U.; Bazterra, V.; Bean, A.; Begalli, M.; Bellantoni, L.; Beri, S. B.; Bernardi, G.; Bernhard, R.; Bertram, I.; Besanon, M.; Beuselinck, R.; Bezzubov, V. A.; Bhat, P. C.; Bhatia, S.; Bhatnagar, V.; Blazey, G.; Blessing, S.; Bloom, K.; Boehnlein, A.; Boline, D.; Boos, E. E.; Borissov, G.; Bose, T.; Brandt, A.; Brandt, O.; Brock, R.; Brooijmans, G.; Bross, A.; Brown, D.; Brown, J.; Bu, X. B.; Buehler, M.; Buescher, V.; Bunichev, V.; Burdin, S.; Buszello, C. P.; Camacho-Prez, E.; Casey, B. C. K.; Castilla-Valdez, H.; Caughron, S.; Chakrabarti, S.; Chakraborty, D.; Chan, K. M.; Chandra, A.; Chapon, E.; Chen, G.; Chevalier-Thry, S.; Cho, D. K.; Cho, S. W.; Choi, S.; Choudhary, B.; Cihangir, S.; Claes, D.; Clutter, J.; Cooke, M.; Cooper, W. E.; Corcoran, M.; Couderc, F.; Cousinou, M.-C.; Croc, A.; Cutts, D.; Das, A.; Davies, G.; de Jong, S. J.; De La Cruz-Burelo, E.; Dliot, F.; Demina, R.; Denisov, D.; Denisov, S. P.; Desai, S.; Deterre, C.; DeVaughan, K.; Diehl, H. T.; Diesburg, M.; Ding, P. F.; Dominguez, A.; Dubey, A.; Dudko, L. V.; Duggan, D.; Duperrin, A.; Dutt, S.; Dyshkant, A.; Eads, M.; Edmunds, D.; Ellison, J.; Elvira, V. D.; Enari, Y.; Evans, H.; Evdokimov, A.; Evdokimov, V. N.; Facini, G.; Feng, L.; Ferbel, T.; Fiedler, F.; Filthaut, F.; Fisher, W.; Fisk, H. E.; Fortner, M.; Fox, H.; Fuess, S.; Garcia-Bellido, A.; Garca-Gonzlez, J. A.; Garca-Guerra, G. A.; Gavrilov, V.; Gay, P.; Geng, W.; Gerbaudo, D.; Gerber, C. E.; Gershtein, Y.; Ginther, G.; Golovanov, G.; Goussiou, A.; Grannis, P. D.; Greder, S.; Greenlee, H.; Grenier, G.; Gris, Ph.; Grivaz, J.-F.; Grohsjean, A.; Grnendahl, S.; Grnewald, M. W.; Guillemin, T.; Gutierrez, G.; Gutierrez, P.; Haas, A.; Hagopian, S.; Haley, J.; Han, L.; Harder, K.; Harel, A.; Hauptman, J. M.; Hays, J.; Head, T.; Hebbeker, T.; Hedin, D.; Hegab, H.; Heinson, A. P.; Heintz, U.; Hensel, C.; Heredia-De La Cruz, I.; Herner, K.; Hesketh, G.; Hildreth, M. D.; Hirosky, R.; Hoang, T.; Hobbs, J. D.; Hoeneisen, B.; Hohlfeld, M.; Howley, I.; Hubacek, Z.; Hynek, V.; Iashvili, I.; Ilchenko, Y.; Illingworth, R.; Ito, A. S.; Jabeen, S.; Jaffr, M.; Jayasinghe, A.; Jesik, R.; Johns, K.; Johnson, E.; Johnson, M.; Jonckheere, A.; Jonsson, P.; Joshi, J.; Jung, A. W.; Juste, A.; Kaadze, K.; Kajfasz, E.; Karmanov, D.; Kasper, P. A.; Katsanos, I.; Kehoe, R.; Kermiche, S.; Khalatyan, N.; Khanov, A.; Kharchilava, A.; Kharzheev, Y. N.; Kiselevich, I.; Kohli, J. M.; Kozelov, A. V.; Kraus, J.; Kulikov, S.; Kumar, A.; Kupco, A.; Kur?a, T.; Kuzmin, V. A.; Lammers, S.; Landsberg, G.; Lebrun, P.; Lee, H. S.; Lee, S. W.; Lee, W. M.; Lellouch, J.; Li, H.; Li, L.; Li, Q. Z.; Lim, J. K.; Lincoln, D.; Linnemann, J.; Lipaev, V. V.; Lipton, R.; Liu, H.; Liu, Y.; Lobodenko, A.; Lokajicek, M.; Lopes de Sa, R.; Lubatti, H. J.; Luna-Garcia, R.; Lyon, A. L.; Maciel, A. K. A.; Madar, R.; Magaa-Villalba, R.; Malik, S.; Malyshev, V. L.; Maravin, Y.; Martnez-Ortega, J.; McCarthy, R.; McGivern, C. L.; Meijer, M. M.; Melnitchouk, A.; Menezes, D.; Mercadante, P. G.; Merkin, M.; Meyer, A.; Meyer, J.; Miconi, F.; Mondal, N. K.; Mulhearn, M.; Nagy, E.; Naimuddin, M.; Narain, M.; Nayyar, R.; Neal, H. A.; Negret, J. P.; Neustroev, P.; Nunnemann, T.; Obrant, G.; Orduna, J.; Osman, N.; Osta, J.; Padilla, M.; Pal, A.; Parashar, N.; Parihar, V.; Park, S. K.; Partridge, R.; Parua, N.; Patwa, A.; Penning, B.; Perfilov, M.; Peters, Y.; Petridis, K.; Petrillo, G.; Ptroff, P.; Pleier, M.-A.; Podesta-Lerma, P. L. M.; Podstavkov, V. M.; Popov, A. V.; Prewitt, M.; Price, D.; Prokopenko, N.; Qian, J.; Quadt, A.; Quinn, B.; Rangel, M. S.; Ranjan, K.; Ratoff, P. N.; Razumov, I.; Renkel, P.; Ripp-Baudot, I.; Rizatdinova, F.; Rominsky, M.; Ross, A.; Royon, C.; Rubinov, P.; Ruchti, R.; Sajot, G.; Salcido, P.; Snchez-Hernndez, A.; Sanders, M. P.; Sanghi, B.; Santos, A. S.; Savage, G.; Sawyer, L.; Scanlon, T.; Schamberger, R. D.; Scheglov, Y.; Schellman, H.; Schlobohm, S.; Schwanenberger, C.; Schwienhorst, R.; Sekaric, J.; Severini, H.; Shabalina, E.; Shary, V.; Shaw, S.; Shchukin, A. A.; Shivpuri, R. K.; Simak, V.; Skubic, P.; Slattery, P.; Smirnov, D.; Smith, K. J.; Snow, G. R.; Snow, J.; Snyder, S.; Sldner-Rembold, S.; Sonnenschein, L.; Soustruznik, K.; Stark, J.; Stoyanova, D. A.; Strauss, M.; Stutte, L.; Suter, L.; Svoisky, P.; Takahashi, M.; Titov, M.; Tokmenin, V. V.; Tsai, Y.-T.; Tschann-Grimm, K.; Tsybychev, D.; Tuchming, B.; Tully, C.; Uvarov, L.; Uvarov, S.; Uzunyan, S.; Van Kooten, R.

    2012-10-02

    We present the first search for new phenomena in Z? final states with large missing transverse energy using data corresponding to an integrated luminosity of 6.2 fb? collected with the D0 experiment in pp? collisions at ?s=1.96 TeV. This signature is predicted in gauge-mediated supersymmetry-breaking models, where the lightest neutralino ??? is the next-to-lightest supersymmetric particle and is produced in pairs, possibly through decay from heavier supersymmetric particles. The ??? can decay either to a Z boson or a photon and an associated gravitino that escapes detection. We exclude this model at the 95% C.L. for supersymmetry-breaking scales of ?<87 TeV.

  14. Deflection and Extraction of Pb Ions up to 33 TeV/c by a Bent Silicon Crystal

    SciTech Connect (OSTI)

    Arduini, G.; Biino, C.; Clement, M.; Cornelis, K.; Doble, N.; Elsener, K.; Ferioli, G.; Fidecaro, G.; Gatignon, L.; Grafstroem, P.; Gyr, M.; Herr, W.; Klem, J.; Mikkelsen, U.; Weisse, E.; Mo Uggerho Taratin, A.; Freund, A.; Keppler, P.; Major, J.

    1997-11-01

    The first results from an experiment to deflect a beam of fully stripped, ultrarelativistic Pb{sup 82+} ions of 400 GeV/c per unit of charge, equivalent to 33 TeV/c , by means of a bent crystal are reported. Deflection efficiencies are as high as 14{percent}, in agreement with theoretical estimates. In a second experiment a bent crystal was used to extract 270 GeV/c -per-charge Pb{sup 82+} (22 TeV/c) ions from a coasting beam in the CERN-SPS, and a high extraction efficiency of up to 10{percent} was found. These represent the first measurements to demonstrate applications of bent crystals in high energy heavy ion beams. {copyright} {ital 1997} {ital The American Physical Society}

  15. The effects of surface bond relaxation on electronic structure of Sb{sub 2}Te{sub 3} nano-films by first-principles calculation

    SciTech Connect (OSTI)

    Li, C. Zhao, Y. F.; Fu, C. X.; Gong, Y. Y.; Chi, B. Q.; Sun, C. Q.

    2014-10-15

    The effects of vertical compressive stress on Sb{sub 2}Te{sub 3} nano-films have been investigated by the first principles calculation, including stability, electronic structure, crystal structure, and bond order. It is found that the band gap of nano-film is sensitive to the stress in Sb{sub 2}Te{sub 3} nano-film and the critical thickness increases under compressive stress. The band gap and band order of Sb{sub 2}Te{sub 3} film has been affected collectively by the surface and internal crystal structures, the contraction ratio between surface bond length of nano-film and the corresponding bond length of bulk decides the band order of Sb{sub 2}Te{sub 3} film.

  16. Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

    SciTech Connect (OSTI)

    Qiu, Weicheng; Hu, Weida Lin, Tie; Yin, Fei; Zhang, Bo; Chen, Xiaoshuang; Lu, Wei; Cheng, Xiang'ai Wang, Rui

    2014-11-10

    In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixed conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.

  17. Property Improvement in CZT via Modeling and Processing Innovations . Te-particles in vertical gradient freeze CZT: Size and Spatial Distributions and Constitutional Supercooling

    SciTech Connect (OSTI)

    Henager, Charles H.; Alvine, Kyle J.; Bliss, Mary; Riley, Brian J.; Stave, Jean A.

    2014-10-01

    A section of a vertical gradient freeze CZT boule approximately 2100-mm3 with a planar area of 300-mm2 was prepared and examined using transmitted IR microscopy at various magnifications to determine the three-dimensional spatial and size distributions of Te-particles over large longitudinal and radial length scales. The boule section was approximately 50-mm wide by 60-mm in length by 7-mm thick and was doubly polished for TIR work. Te-particles were imaged through the thickness using extended focal imaging to locate the particles in thickness planes spaced 15-m apart and then in plane of the image using xy-coordinates of the particle center of mass so that a true three dimensional particle map was assembled for a 1-mm by 45-mm longitudinal strip and for a 1-mm by 50-mm radial strip. Te-particle density distributions were determined as a function of longitudinal and radial positions in these strips, and treating the particles as vertices of a network created a 3D image of the particle spatial distribution. Te-particles exhibited a multi-modal log-normal size density distribution that indicated a slight preference for increasing size with longitudinal growth time, while showing a pronounced cellular network structure throughout the boule that can be correlated to dislocation network sizes in CZT. Higher magnification images revealed a typical Rayleigh-instability pearl string morphology with large and small satellite droplets. This study includes solidification experiments in small crucibles of 30:70 mixtures of Cd:Te to reduce the melting point below 1273 K (1000C). These solidification experiments were performed over a wide range of cooling rates and clearly demonstrated a growth instability with Te-particle capture that is suggested to be responsible for one of the peaks in the size distribution using size discrimination visualization. The results are discussed with regard to a manifold Te-particle genesis history as 1) Te-particle direct capture from melt-solid growth instabilities, 2) Te-particle formation from dislocation core diffusion and the formation and breakup of Te-tubes, and 3) Te-particle formation due to classical nucleation and growth as precipitates.

  18. Synthesis, transport properties, and electronic structure of Cu{sub 2}CdSnTe{sub 4}

    SciTech Connect (OSTI)

    Dong, Yongkwan; Khabibullin, Artem R.; Wei, Kaya; Ge, Zhen-Hua; Woods, Lilia M. Nolas, George S.; Martin, Joshua; Salvador, James R.

    2014-06-23

    A new stannite phase was synthesized and its temperature dependent transport properties were investigated. Cu{sub 2}CdSnTe{sub 4} possesses strong p-type conduction, while the temperature dependence of the thermal conductivity exhibits typical dielectric behavior. Electronic structure calculations allowed for a description of the transport characteristics in terms the energy band structure, density of states, and Fermi surface. The potential for thermoelectric applications is also discussed.

  19. Quantum oscillations in magnetothermopower measurements of topological insulator Bi2Te3

    SciTech Connect (OSTI)

    Qu, Dong -Xia; Hor, Y. S.; Cava, R. J.

    2012-12-10

    We report the magnetothermopower measurements of the nonmetallic topological insulator Bi2Te3 in magnetic fields up to 35 T. Quantum oscillations arising from surface states are observed in both thermoelectric and conductivity tensors. The inferred surface thermopower has a peak magnitude ~1 mV/K possibly as a result of surface electron and bulk phonon interaction. At the n = 1 Landau level, we resolve additional quantum oscillations signaling Landau sublevels.

  20. Les Houches Physics at TeV Colliders 2005 Beyond the Standard Model Working Group: Summary Report

    SciTech Connect (OSTI)

    Allanach, B.C.; Grojean, C.; Skands, P.; Accomando, E.; Azuelos, G.; Baer, H.; Balazs, C.; Belanger, G.; Benakli, K.; Boudjema, F.; Brelier, B.; Bunichev, V.; Cacciapaglia, G.; Carena, M.; Choudhury, D.; Delsart, P.-A.; De Sanctis, U.; Desch, K.; Dobrescu, B.A.; Dudko, L.; El Kacimi, M.; /Saclay, SPhT /CERN /Fermilab /INFN, Turin /Turin U. /Montreal U. /TRIUMF /Florida State U. /Argonne /Annecy, LAPTH /Paris, LPTHE /Moscow State U. /Cornell U., CIHEP /Delhi U. /Milan U. /INFN, Milan /Freiburg U. /Cadi Ayyad U., Marrakech /Orsay, LPT /Oslo U. /Lancaster U.

    2006-03-17

    The work contained herein constitutes a report of the ''Beyond the Standard Model'' working group for the Workshop ''Physics at TeV Colliders'', Les Houches, France, 2-20 May, 2005. We present reviews of current topics as well as original research carried out for the workshop. Supersymmetric and non-supersymmetric models are studied, as well as computational tools designed in order to facilitate their phenomenology.