National Library of Energy BETA

Sample records for ultraviolet lithography mask

  1. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    EUV lithography relies on specialized lenses made of curved mirrors with reflective coatings called multilayers to print patterns with high resolution. One special flat mirror...

  2. Extreme ultraviolet lithography machine

    DOE Patents [OSTI]

    Tichenor, Daniel A. (Castro Valley, CA); Kubiak, Glenn D. (Livermore, CA); Haney, Steven J. (Tracy, CA); Sweeney, Donald W. (San Ramon, CA)

    2000-01-01

    An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

  3. Method for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Felter, T. E. (Livermore, CA); Kubiak, Glenn D. (Livermore, CA)

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  4. Method for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Felter, T. E. (727 Clara St., Livermore, Alameda County, CA 94550); Kubiak, G. D. (475 Maple St., Livermore, Alameda County, CA 94550)

    2000-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  5. Photoresist composition for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Felter, T. E. (Alameda County, CA); Kubiak, G. D. (Alameda County, CA)

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

  6. High numerical aperture projection system for extreme ultraviolet projection lithography

    DOE Patents [OSTI]

    Hudyma, Russell M. (San Ramon, CA)

    2000-01-01

    An optical system is described that is compatible with extreme ultraviolet radiation and comprises five reflective elements for projecting a mask image onto a substrate. The five optical elements are characterized in order from object to image as concave, convex, concave, convex, and concave mirrors. The optical system is particularly suited for ring field, step and scan lithography methods. The invention uses aspheric mirrors to minimize static distortion and balance the static distortion across the ring field width which effectively minimizes dynamic distortion. The present invention allows for higher device density because the optical system has improved resolution that results from the high numerical aperture, which is at least 0.14.

  7. Condenser for ring-field deep-ultraviolet and extreme-ultraviolet lithography

    DOE Patents [OSTI]

    Chapman, Henry N. (Livermore, CA); Nugent, Keith A. (North Fitzroy, AU)

    2001-01-01

    A condenser for use with a ring-field deep ultraviolet or extreme ultraviolet lithography system. A condenser includes a ripple-plate mirror which is illuminated by a collimated beam at grazing incidence. The ripple plate comprises a plate mirror into which is formed a series of channels along an axis of the mirror to produce a series of concave surfaces in an undulating pattern. Light incident along the channels of the mirror is reflected onto a series of cones. The distribution of slopes on the ripple plate leads to a distribution of angles of reflection of the incident beam. This distribution has the form of an arc, with the extremes of the arc given by the greatest slope in the ripple plate. An imaging mirror focuses this distribution to a ring-field arc at the mask plane.

  8. Condenser for ring-field deep ultraviolet and extreme ultraviolet lithography

    DOE Patents [OSTI]

    Chapman, Henry N. (Livermore, CA); Nugent, Keith A. (North Fitzroy, AU)

    2002-01-01

    A condenser for use with a ring-field deep ultraviolet or extreme ultraviolet lithography system. A condenser includes a ripple-plate mirror which is illuminated by a collimated or converging beam at grazing incidence. The ripple plate comprises a flat or curved plate mirror into which is formed a series of channels along an axis of the mirror to produce a series of concave surfaces in an undulating pattern. Light incident along the channels of the mirror is reflected onto a series of cones. The distribution of slopes on the ripple plate leads to a distribution of angles of reflection of the incident beam. This distribution has the form of an arc, with the extremes of the arc given by the greatest slope in the ripple plate. An imaging mirror focuses this distribution to a ring-field arc at the mask plane.

  9. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    with SEMATECH, an international semiconductor industry consortium, to create a unique Fresnel zone-plate microscope on Advanced Light Source Beamline 11.3.2 called the SEMATECH...

  10. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACT EVALUATIONIntroducing the Richard P. FeynmanInventors in

  11. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACT EVALUATIONIntroducing the Richard P. FeynmanInventors inInvestigating

  12. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACT EVALUATIONIntroducing the Richard P. FeynmanInventors

  13. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACT EVALUATIONIntroducing the Richard P. FeynmanInventorsInvestigating

  14. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACT EVALUATIONIntroducing the Richard P.

  15. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation CurrentHenryInhibitingInteractivePGAS and HybridBetoniCenter for

  16. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation CurrentHenryInhibitingInteractivePGAS and HybridBetoniCenter forInvestigating

  17. Vitreous carbon mask substrate for X-ray lithography

    DOE Patents [OSTI]

    Aigeldinger, Georg (Livermore, CA); Skala, Dawn M. (Fremont, CA); Griffiths, Stewart K. (Livermore, CA); Talin, Albert Alec (Livermore, CA); Losey, Matthew W. (Livermore, CA); Yang, Chu-Yeu Peter (Dublin, CA)

    2009-10-27

    The present invention is directed to the use of vitreous carbon as a substrate material for providing masks for X-ray lithography. The new substrate also enables a small thickness of the mask absorber used to pattern the resist, and this enables improved mask accuracy. An alternative embodiment comprised the use of vitreous carbon as a LIGA substrate wherein the VC wafer blank is etched in a reactive ion plasma after which an X-ray resist is bonded. This surface treatment provides a surface enabling good adhesion of the X-ray photoresist and subsequent nucleation and adhesion of the electrodeposited metal for LIGA mold-making while the VC substrate practically eliminates secondary radiation effects that lead to delamination of the X-ray resist form the substrate, the loss of isolated resist features, and the formation of a resist layer adjacent to the substrate that is insoluble in the developer.

  18. An EUV Fresnel zoneplate mask-imaging microscope for lithography generations reaching 8 nm

    E-Print Network [OSTI]

    An EUV Fresnel zoneplate mask-imaging microscope for lithography generations reaching 8 nm Kenneth lithography design rules. The proposed microscope features an array of user-selectable Fresnel zoneplate-EUV, Fresnel zoneplate microscope, the AIT has been in the vanguard of high-resolution EUV mask imaging

  19. Energy flow in light-coupling masks for lensless optical lithography

    E-Print Network [OSTI]

    Floreano, Dario

    Energy flow in light-coupling masks for lensless optical lithography Olivier J. F. Martin@zurich.ibm.com Abstract: We illustrate the propagation of light in a new type of coupling mask for lensless optical. Biebuck, B. Michel, O.J.F. Martin and N.B. Piller, "Light-coupling masks: an alternative, lensless

  20. Compact multi-bounce projection system for extreme ultraviolet projection lithography

    DOE Patents [OSTI]

    Hudyma, Russell M. (San Ramon, CA)

    2002-01-01

    An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four optical elements providing five reflective surfaces for projecting a mask image onto a substrate. The five optical surfaces are characterized in order from object to image as concave, convex, concave, convex and concave mirrors. The second and fourth reflective surfaces are part of the same optical element. The optical system is particularly suited for ring field step and scan lithography methods. The invention uses aspheric mirrors to minimize static distortion and balance the static distortion across the ring field width, which effectively minimizes dynamic distortion.

  1. Method for the protection of extreme ultraviolet lithography optics

    DOE Patents [OSTI]

    Grunow, Philip A.; Clift, Wayne M.; Klebanoff, Leonard E.

    2010-06-22

    A coating for the protection of optical surfaces exposed to a high energy erosive plasma. A gas that can be decomposed by the high energy plasma, such as the xenon plasma used for extreme ultraviolet lithography (EUVL), is injected into the EUVL machine. The decomposition products coat the optical surfaces with a protective coating maintained at less than about 100 .ANG. thick by periodic injections of the gas. Gases that can be used include hydrocarbon gases, particularly methane, PH.sub.3 and H.sub.2S. The use of PH.sub.3 and H.sub.2S is particularly advantageous since films of the plasma-induced decomposition products S and P cannot grow to greater than 10 .ANG. thick in a vacuum atmosphere such as found in an EUVL machine.

  2. Carbon contamination of extreme ultraviolet (EUV) mask and its effect on imaging

    E-Print Network [OSTI]

    Fan, Yu-Jen

    2009-01-01

    induced carbon contamination of extreme ultraviolet optics."potential LWR due to the contamination topography may be anet aI. , "Accelerated contamination testing of EUV masks."

  3. Four-mirror extreme ultraviolet (EUV) lithography projection system

    DOE Patents [OSTI]

    Cohen, Simon J (Pleasonton, CA); Jeong, Hwan J (Los Altos, CA); Shafer, David R (Fairfield, CT)

    2000-01-01

    The invention is directed to a four-mirror catoptric projection system for extreme ultraviolet (EUV) lithography to transfer a pattern from a reflective reticle to a wafer substrate. In order along the light path followed by light from the reticle to the wafer substrate, the system includes a dominantly hyperbolic convex mirror, a dominantly elliptical concave mirror, spherical convex mirror, and spherical concave mirror. The reticle and wafer substrate are positioned along the system's optical axis on opposite sides of the mirrors. The hyperbolic and elliptical mirrors are positioned on the same side of the system's optical axis as the reticle, and are relatively large in diameter as they are positioned on the high magnification side of the system. The hyperbolic and elliptical mirrors are relatively far off the optical axis and hence they have significant aspherical components in their curvatures. The convex spherical mirror is positioned on the optical axis, and has a substantially or perfectly spherical shape. The spherical concave mirror is positioned substantially on the opposite side of the optical axis from the hyperbolic and elliptical mirrors. Because it is positioned off-axis to a degree, the spherical concave mirror has some asphericity to counter aberrations. The spherical concave mirror forms a relatively large, uniform field on the wafer substrate. The mirrors can be tilted or decentered slightly to achieve further increase in the field size.

  4. Flexible CO2 laser system for fundamental research related to an extreme ultraviolet lithography source

    E-Print Network [OSTI]

    Najmabadi, Farrokh

    Flexible CO2 laser system for fundamental research related to an extreme ultraviolet lithography 2009; published online 10 December 2009 A CO2 laser system with flexible parameters was developed 1010 W/cm2 . Utilizing this CO2 MOPA laser system, high conversion efficiency from laser to in-band 2

  5. Low-cost method for producing extreme ultraviolet lithography optics

    DOE Patents [OSTI]

    Folta, James A. (Livermore, CA); Montcalm, Claude (Fort Collins, CO); Taylor, John S. (Livermore, CA); Spiller, Eberhard A. (Mt. Kisco, NY)

    2003-11-21

    Spherical and non-spherical optical elements produced by standard optical figuring and polishing techniques are extremely expensive. Such surfaces can be cheaply produced by diamond turning; however, the roughness in the diamond turned surface prevent their use for EUV lithography. These ripples are smoothed with a coating of polyimide before applying a 60 period Mo/Si multilayer to reflect a wavelength of 134 .ANG. and have obtained peak reflectivities close to 63%. The savings in cost are about a factor of 100.

  6. Commissioning a new EUV Fresnel zoneplate mask-imaging microscope for lithography generations reaching 8 nm

    E-Print Network [OSTI]

    Goldberg, Kenneth A.

    2014-01-01

    Commissioning a new EUV Fresnel zoneplate mask-imagingimaging system relies on Fresnel zoneplate lenses, which

  7. Method for the manufacture of phase shifting masks for EUV lithography

    DOE Patents [OSTI]

    Stearns, Daniel G.; Sweeney, Donald W.; Mirkarimi, Paul B.; Barty, Anton

    2006-04-04

    A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.

  8. Printability and inspectability of programmed pit defects on teh masks in EUV lithography

    SciTech Connect (OSTI)

    Kang, I.-Y.; Seo, H.-S.; Ahn, B.-S.; Lee, D.-G.; Kim, D.; Huh, S.; Koh, C.-W.; Cha, B.; Kim, S.-S.; Cho, H.-K.; Mochi, I.; Goldberg, K. A.

    2010-03-12

    Printability and inspectability of phase defects in ELlVL mask originated from substrate pit were investigated. For this purpose, PDMs with programmed pits on substrate were fabricated using different ML sources from several suppliers. Simulations with 32-nm HP L/S show that substrate pits with below {approx}20 nm in depth would not be printed on the wafer if they could be smoothed by ML process down to {approx}1 nm in depth on ML surface. Through the investigation of inspectability for programmed pits, minimum pit sizes detected by KLA6xx, AIT, and M7360 depend on ML smoothing performance. Furthermore, printability results for pit defects also correlate with smoothed pit sizes. AIT results for pattemed mask with 32-nm HP L/S represents that minimum printable size of pits could be {approx}28.3 nm of SEVD. In addition, printability of pits became more printable as defocus moves to (-) directions. Consequently, printability of phase defects strongly depends on their locations with respect to those of absorber patterns. This indicates that defect compensation by pattern shift could be a key technique to realize zero printable phase defects in EUVL masks.

  9. Maskless, reticle-free, lithography

    DOE Patents [OSTI]

    Ceglio, Natale M. (Livermore, CA); Markle, David A. (Saratoga, CA)

    1997-11-25

    A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies.

  10. Maskless, reticle-free, lithography

    DOE Patents [OSTI]

    Ceglio, N.M.; Markle, D.A.

    1997-11-25

    A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies. 7 figs.

  11. Extreme ultraviolet laser-based table-top aerial image metrology of lithographic masks

    E-Print Network [OSTI]

    Rocca, Jorge J.

    masks," in 22nd Annual BACUS Symposium on Photomask Techology, (proceedings of SPIE, 2002), 0277­0786X

  12. Method for generating extreme ultraviolet with mather-type plasma accelerators for use in Extreme Ultraviolet Lithography

    DOE Patents [OSTI]

    Hassanein, Ahmed (Bolingbrook, IL); Konkashbaev, Isak (Bolingbrook, IL)

    2006-10-03

    A device and method for generating extremely short-wave ultraviolet electromagnetic wave uses two intersecting plasma beams generated by two plasma accelerators. The intersection of the two plasma beams emits electromagnetic radiation and in particular radiation in the extreme ultraviolet wavelength. In the preferred orientation two axially aligned counter streaming plasmas collide to produce an intense source of electromagnetic radiation at the 13.5 nm wavelength. The Mather type plasma accelerators can utilize tin, or lithium covered electrodes. Tin, lithium or xenon can be used as the photon emitting gas source.

  13. VUV lithography

    DOE Patents [OSTI]

    George, Edward V. (Livermore, CA); Oster, Yale (Danville, CA); Mundinger, David C. (Stockton, CA)

    1990-01-01

    Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1700-1300A using xenon, krypton or argon; shorter wavelengths of 850-650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask.

  14. VUV lithography

    DOE Patents [OSTI]

    George, E.V.; Oster, Y.; Mundinger, D.C.

    1990-12-25

    Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1,700--1,300A using xenon, krypton or argon; shorter wavelengths of 850--650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask. 6 figs.

  15. Method for plasma formation for extreme ultraviolet lithography-theta pinch

    DOE Patents [OSTI]

    Hassanein, Ahmed (Naperville, IL); Konkashbaev, Isak (Bolingbrook, IL); Rice, Bryan (Hillsboro, OR)

    2007-02-20

    A device and method for generating extremely short-wave ultraviolet electromagnetic wave, utilizing a theta pinch plasma generator to produce electromagnetic radiation in the range of 10 to 20 nm. The device comprises an axially aligned open-ended pinch chamber defining a plasma zone adapted to contain a plasma generating gas within the plasma zone; a means for generating a magnetic field radially outward of the open-ended pinch chamber to produce a discharge plasma from the plasma generating gas, thereby producing a electromagnetic wave in the extreme ultraviolet range; a collecting means in optical communication with the pinch chamber to collect the electromagnetic radiation; and focusing means in optical communication with the collecting means to concentrate the electromagnetic radiation.

  16. High numerical aperture ring field projection system for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Hudyma, Russell (218 Eastridge Dr., San Ramon, CA 94583-4905); Shafer, David (50 Drake La., Fairfield, CT 06430-2925)

    2001-01-01

    An all-reflective optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first convex mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receives a chief ray at an incidence angle of less than substantially 9.degree., and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 14.degree.. Four of the six reflecting surfaces have an aspheric departure of less than substantially 12 .mu.m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 12 .mu.m. Each of the six reflecting surfaces has an aspheric departure of less than substantially 16 .mu.m.

  17. High numerical aperture ring field projection system for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Hudyma, Russell (315 Eastridge Dr., San Ramon, CA 94583-4905)

    2001-01-01

    An all-reflective optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first concave mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receives a chief ray at an incidence angle of less than substantially 12.degree., and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 15.degree.. Four of the six reflecting surfaces have an aspheric departure of less than substantially 7 .mu.m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 14 .mu.m. Each of the six reflecting surfaces has an aspheric departure of less than 16.0 .mu.m.

  18. High numerical aperture ring field projection system for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Hudyma, Russell (218 Eastridge Dr., San Ramon, CA 84583-4905)

    2000-01-01

    An all-refelctive optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first concave mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receives a chief ray at an incidence angle less than substantially 12.degree., and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 15.degree.. Four of the six reflecting surfaces have an aspheric departure of less than substantially 7 .mu.m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 14 .mu.m. Each of the six refelecting surfaces has an aspheric departure of less than 16.0 .mu.m.

  19. High numerical aperture ring field projection system for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Hudyma, Russell (218 Eastridge Dr., San Ramon, CA 94583-4905); Shafer, David R. (56 Drake La., Fairfield, CT 06430-2925)

    2001-01-01

    An all-reflective optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first convex mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receive a chief ray at an incidence angle of less than substantially 9.degree., and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 14.degree.. Four of the six reflecting surfaces have an aspheric departure of less than substantially 12 .mu.m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 12 .mu.m. Each of the six reflecting surfaces has an aspheric departure of less than substantially 16 .mu.m.

  20. Passivating overcoat bilayer for multilayer reflective coatings for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Montcalm, Claude (Livermore, CA); Stearns, Daniel G. (Los Altos, CA); Vernon, Stephen P. (Pleasanton, CA)

    1999-01-01

    A passivating overcoat bilayer is used for multilayer reflective coatings for extreme ultraviolet (EUV) or soft x-ray applications to prevent oxidation and corrosion of the multilayer coating, thereby improving the EUV optical performance. The overcoat bilayer comprises a layer of silicon or beryllium underneath at least one top layer of an elemental or a compound material that resists oxidation and corrosion. Materials for the top layer include carbon, palladium, carbides, borides, nitrides, and oxides. The thicknesses of the two layers that make up the overcoat bilayer are optimized to produce the highest reflectance at the wavelength range of operation. Protective overcoat systems comprising three or more layers are also possible.

  1. Method and apparatus for inspecting reflection masks for defects

    DOE Patents [OSTI]

    Bokor, Jeffrey (Oakland, CA); Lin, Yun (Berkeley, CA)

    2003-04-29

    An at-wavelength system for extreme ultraviolet lithography mask blank defect detection is provided. When a focused beam of wavelength 13 nm is incident on a defective region of a mask blank, three possible phenomena can occur. The defect will induce an intensity reduction in the specularly reflected beam, scatter incoming photons into an off-specular direction, and change the amplitude and phase of the electric field at the surface which can be monitored through the change in the photoemission current. The magnitude of these changes will depend on the incident beam size, and the nature, extent and size of the defect. Inspection of the mask blank is performed by scanning the mask blank with 13 nm light focused to a spot a few .mu.m in diameter, while measuring the reflected beam intensity (bright field detection), the scattered beam intensity (dark-field detection) and/or the change in the photoemission current.

  2. Neon Ion Beam Lithography (NIBL)

    E-Print Network [OSTI]

    Winston, Donald

    Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. ...

  3. Maskless, resistless ion beam lithography

    SciTech Connect (OSTI)

    Ji, Qing

    2003-03-10

    As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O{sub 2}{sup +}, BF{sub 2}{sup +}, P{sup +} etc., for surface modification and doping applications. With optimized source condition, around 85% of BF{sub 2}{sup +}, over 90% of O{sub 2}{sup +} and P{sup +} have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He{sup +} beam is as high as 440 A/cm{sup 2} {center_dot} Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O{sub 2}{sup +} ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O{sub 2}{sup +} ions with the dose of 10{sup 15} cm{sup -2}. The oxide can then serve as a hard mask for patterning of the Si film. The process flow and the experimental results for directly patterned poly-Si features are presented. The formation of shallow pn-junctions in bulk silicon wafers by scanning focused P{sup +} beam implantation at 5 keV is also presented. With implantation dose of around 10{sup 16} cm{sup -2}, the electron concentration is about 2.5 x 10{sup 18} cm{sup -3} and electron mobility is around 200 cm{sup 2}/V{center_dot}s. To demonstrate the suitability of scanning FIB lithography for the manufacture of integrated circuit devices, SOI MOSFET fabrication using the maskless, resistless ion beam lithography is demonstrated. An array of microcolumns can be built by stacking multi-aperture electrode and insulator layers. Because the multicusp plasma source can achieve uniform ion density over a large area, it can be used in conjunction with the array of microcolumns, for massively parallel FIB processing to achieve reasonable exposure throughput.

  4. Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer

    DOE Patents [OSTI]

    Cardinale, Gregory F. (Oakland, CA)

    2002-01-01

    A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.

  5. Optimization of extreme ultraviolet photons emission and collection in mass-limited laser produced plasmas for lithography application

    E-Print Network [OSTI]

    Harilal, S. S.

    Optimization of extreme ultraviolet photons emission and collection in mass-limited laser produced in DPP or with pre-pulsing in LPP provide wide area for optimization in regards to conversion efficiency and collection as well as calculating photons source location and size. We optimized several parameters of dual

  6. Diffractive optics for maskless lithography and imaging

    E-Print Network [OSTI]

    Menon, Rajesh, 1976-

    2003-01-01

    Semiconductor industry has primarily been driven by the capability of lithography to pattern smaller and smaller features. However due to increasing mask costs and complexity, and increasing tool costs, the state-of-the-art ...

  7. Carbon contamination topography analysis of EUV masks

    E-Print Network [OSTI]

    Fan, Y.-J.

    2010-01-01

    induced carbon contamination of extreme ultraviolet optics,"and A. Izumi. "Carbon contamination of EL'V mask: filmEffect of Carbon Contamination on the Printing Performance

  8. Critical illumination condenser for x-ray lithography

    DOE Patents [OSTI]

    Cohen, S.J.; Seppala, L.G.

    1998-04-07

    A critical illumination condenser system is disclosed, particularly adapted for use in extreme ultraviolet (EUV) projection lithography based on a ring field imaging system and a laser produced plasma source. The system uses three spherical mirrors and is capable of illuminating the extent of the mask plane by scanning either the primary mirror or the laser plasma source. The angles of radiation incident upon each mirror of the critical illumination condenser vary by less than eight (8) degrees. For example, the imaging system in which the critical illumination condenser is utilized has a 200 {micro}m source and requires a magnification of 26. The three spherical mirror system constitutes a two mirror inverse Cassegrain, or Schwarzschild configuration, with a 25% area obstruction (50% linear obstruction). The third mirror provides the final pupil and image relay. The mirrors include a multilayer reflective coating which is reflective over a narrow bandwidth. 6 figs.

  9. Critical illumination condenser for x-ray lithography

    DOE Patents [OSTI]

    Cohen, Simon J. (Pleasanton, CA); Seppala, Lynn G. (Livermore, CA)

    1998-01-01

    A critical illumination condenser system, particularly adapted for use in extreme ultraviolet (EUV) projection lithography based on a ring field imaging system and a laser produced plasma source. The system uses three spherical mirrors and is capable of illuminating the extent of the mask plane by scanning either the primary mirror or the laser plasma source. The angles of radiation incident upon each mirror of the critical illumination condenser vary by less than eight (8) degrees. For example, the imaging system in which the critical illumination condenser is utilized has a 200 .mu.m source and requires a magnification of 26.times.. The three spherical mirror system constitutes a two mirror inverse Cassegrain, or Schwarzschild configuration, with a 25% area obstruction (50% linear obstruction). The third mirror provides the final pupil and image relay. The mirrors include a multilayer reflective coating which is reflective over a narrow bandwidth.

  10. Mask Roughness Induced LER in EUV Lithography

    E-Print Network [OSTI]

    McClinton, Brittany

    2011-01-01

    focus…………………………………… Alt-PSM……………………………………………………………… 5.2.122-nm……………………….. 5.2.2 Alt-PSM vs. Lines and Spaces at 22-Simplified LER, alt-psm……………………………… Simulated LER, 22nm alt-

  11. Virtual mask digital electron beam lithography

    DOE Patents [OSTI]

    Baylor, L.R.; Thomas, C.E.; Voelkl, E.; Moore, J.A.; Simpson, M.L.; Paulus, M.J.

    1999-04-06

    Systems and methods for direct-to-digital holography are described. An apparatus includes a laser; a beamsplitter optically coupled to the laser; a reference beam mirror optically coupled to the beamsplitter; an object optically coupled to the beamsplitter, a focusing lens optically coupled to both the reference beam mirror and the object; and a digital recorder optically coupled to the focusing lens. A reference beam is incident upon the reference beam mirror at a non-normal angle, and the reference beam and an object beam are focused by the focusing lens at a focal plane of the digital recorder to form an image. The systems and methods provide advantages in that computer assisted holographic measurements can be made. 5 figs.

  12. Virtual mask digital electron beam lithography

    DOE Patents [OSTI]

    Baylor, Larry R. (Farragut, TN); Thomas, Clarence E. (Knoxville, TN); Voelkl, Edgar (Oak Ridge, TN); Moore, James A. (Powell, TN); Simpson, Michael L. (Knoxville, TN); Paulus, Michael J. (Knoxville, TN)

    1999-01-01

    Systems and methods for direct-to-digital holography are described. An apparatus includes a laser; a beamsplitter optically coupled to the laser; a reference beam mirror optically coupled to the beamsplitter; an object optically coupled to the beamsplitter, a focusing lens optically coupled to both the reference beam mirror and the object; and a digital recorder optically coupled to the focusing lens. A reference beam is incident upon the reference beam mirror at a non-normal angle, and the reference beam and an object beam are focused by the focusing lens at a focal plane of the digital recorder to form an image. The systems and methods provide advantages in that computer assisted holographic measurements can be made.

  13. Inspection of lithographic mask blanks for defects

    DOE Patents [OSTI]

    Sommargren, Gary E. (Santa Cruz, CA)

    2001-01-01

    A visible light method for detecting sub-100 nm size defects on mask blanks used for lithography. By using optical heterodyne techniques, detection of the scattered light can be significantly enhanced as compared to standard intensity detection methods. The invention is useful in the inspection of super-polished surfaces for isolated surface defects or particulate contamination and in the inspection of lithographic mask or reticle blanks for surface defects or bulk defects or for surface particulate contamination.

  14. Maskless lithography

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Stulen, Richard H. (Livermore, CA)

    1999-01-01

    The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.

  15. Maskless lithography

    DOE Patents [OSTI]

    Sweatt, W.C.; Stulen, R.H.

    1999-02-09

    The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides. 12 figs.

  16. Method for the fabrication of three-dimensional microstructures by deep X-ray lithography

    DOE Patents [OSTI]

    Sweatt, William C.; Christenson, Todd R.

    2005-04-05

    A method for the fabrication of three-dimensional microstructures by deep X-ray lithography (DXRL) comprises a masking process that uses a patterned mask with inclined mask holes and off-normal exposures with a DXRL beam aligned with the inclined mask holes. Microstructural features that are oriented in different directions can be obtained by using multiple off-normal exposures through additional mask holes having different orientations. Various methods can be used to block the non-aligned mask holes from the beam when using multiple exposures. A method for fabricating a precision 3D X-ray mask comprises forming an intermediate mask and a master mask on a common support membrane.

  17. Nanopatterning of ultrananocrystalline diamond thin films via block copolymer lithography.

    SciTech Connect (OSTI)

    Ramanathan, M.; Darling, S. B.; Sumant, A. V.; Auciello, O.

    2010-07-01

    Nanopatterning of diamond surfaces is critical for the development of diamond-based microelectromechanical system/nanoelectromechanical system (MEMS/NEMS), such as resonators or switches. Micro-/nanopatterning of diamond materials is typically done using photolithography or electron beam lithography combined with reactive ion etching (RIE). In this work, we demonstrate a simple process, block copolymer (BCP) lithography, for nanopatterning of ultrananocrystalline diamond (UNCD) films to produce nanostructures suitable for the fabrication of NEMS based on UNCD. In BCP lithography, nanoscale self-assembled polymeric domains serve as an etch mask for pattern transfer. The authors used thin films of a cylinder-forming organic-inorganic BCP, poly(styrene-block-ferrocenyldimethylsilane), PS-b-PFS, as an etch mask on the surface of UNCD films. Orientational control of the etch masking cylindrical PFS blocks is achieved by manipulating the polymer film thickness in concert with the annealing treatment. We have observed that the surface roughness of UNCD layers plays an important role in transferring the pattern. Oxygen RIE was used to etch the exposed areas of the UNCD film underneath the BCP. Arrays of both UNCD posts and wirelike structures have been created using the same starting polymeric materials as the etch mask.

  18. Contact thermal lithography

    E-Print Network [OSTI]

    Schmidt, Aaron Jerome, 1979-

    2004-01-01

    Contact thermal lithography is a method for fabricating microscale patterns using heat transfer. In contrast to photolithography, where the minimum achievable feature size is proportional to the wavelength of light used ...

  19. Automation of soft lithography

    E-Print Network [OSTI]

    Kim, Hyung-Jun

    2006-01-01

    This dissertation is a final documentation of the project whose goal is demonstrating manufacturability of soft lithography. Specifically, our target is creating micron scale patterns of resists on a 3 square inch, relatively ...

  20. M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features

    DOE Patents [OSTI]

    Brueck, Steven R.J. (Albuquerque, NM); Chen, Xiaolan (Albuquerque, NM); Zaidi, Saleem (Albuquerque, NM); Devine, Daniel J. (Los Gatos, CA)

    1998-06-02

    Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.

  1. Carbon contamination topography analysis of EUV masks

    SciTech Connect (OSTI)

    Fan, Y.-J.; Yankulin, L.; Thomas, P.; Mbanaso, C.; Antohe, A.; Garg, R.; Wang, Y.; Murray, T.; Wuest, A.; Goodwin, F.; Huh, S.; Cordes, A.; Naulleau, P.; Goldberg, K. A.; Mochi, I.; Gullikson, E.; Denbeaux, G.

    2010-03-12

    The impact of carbon contamination on extreme ultraviolet (EUV) masks is significant due to throughput loss and potential effects on imaging performance. Current carbon contamination research primarily focuses on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on absorbing features and the printed images, as well as impacting the efficiency of cleaning process. In this work, several different techniques were used to determine possible contamination topography. Lithographic simulations were also performed and the results compared with the experimental data.

  2. Electron Beam Lithography

    E-Print Network [OSTI]

    Sandini, Giulio

    Electron Beam Lithography Marco Salerno #12;Outline · general lithographic concepts · EBL www.cnf.cornell.edu/SPIEBook/SPIE1.HTM #12;Typical Electron Beam Column Zeiss GeminiTM column Types of Electron Beam Columns · no e- cross over no Boersch-effect (additional energy spread) · beam booster

  3. Functional patterning of PDMS microfluidic devices using integrated chemo-masks

    E-Print Network [OSTI]

    Fraden, Seth

    .1039/c004050a Microfluidic devices can be molded easily from PDMS using soft lithography. However, it can be molded quickly, easily, and at low cost.1 Additional advantages of PDMS include its gas a cm-scale array at mm-scale precision, the photo-mask must be aligned with the microchannels to 1 part

  4. Electroplating with Photoresist Masks

    E-Print Network [OSTI]

    Yoo, S. J. Ben

    Electroplating with Photoresist Masks Revised: 2010-01-27 Source: www.microchemicals.eu e-Mail: sales@microchemicals.eu Electroplating - Basic Requirements on the Photoresist Electroplating with photoresist masks requires a chemically stable resist with a superior ad- hesion

  5. Soft x-ray reduction camera for submicron lithography

    DOE Patents [OSTI]

    Hawryluk, Andrew M. (2708 Rembrandt Pl., Modesto, CA 95356); Seppala, Lynn G. (7911 Mines Rd., Livermore, CA 94550)

    1991-01-01

    Soft x-ray projection lithography can be performed using x-ray optical components and spherical imaging lenses (mirrors), which form an x-ray reduction camera. The x-ray reduction is capable of projecting a 5x demagnified image of a mask onto a resist coated wafer using 4.5 nm radiation. The diffraction limited resolution of this design is about 135 nm with a depth of field of about 2.8 microns and a field of view of 0.2 cm.sup.2. X-ray reflecting masks (patterned x-ray multilayer mirrors) which are fabricated on thick substrates and can be made relatively distortion free are used, with a laser produced plasma for the source. Higher resolution and/or larger areas are possible by varying the optic figures of the components and source characteristics.

  6. Membrane projection lithography

    SciTech Connect (OSTI)

    Burckel, David Bruce; Davids, Paul S; Resnick, Paul J; Draper, Bruce L

    2015-03-17

    The various technologies presented herein relate to a three dimensional manufacturing technique for application with semiconductor technologies. A membrane layer can be formed over a cavity. An opening can be formed in the membrane such that the membrane can act as a mask layer to the underlying wall surfaces and bottom surface of the cavity. A beam to facilitate an operation comprising any of implantation, etching or deposition can be directed through the opening onto the underlying surface, with the opening acting as a mask to control the area of the underlying surfaces on which any of implantation occurs, material is removed, and/or material is deposited. The membrane can be removed, a new membrane placed over the cavity and a new opening formed to facilitate another implantation, etching, or deposition operation. By changing the direction of the beam different wall/bottom surfaces can be utilized to form a plurality of structures.

  7. Programmable imprint lithography template

    DOE Patents [OSTI]

    Cardinale, Gregory F. (Oakland, CA); Talin, Albert A. (Livermore, CA)

    2006-10-31

    A template for imprint lithography (IL) that reduces significantly template production costs by allowing the same template to be re-used for several technology generations. The template is composed of an array of spaced-apart moveable and individually addressable rods or plungers. Thus, the template can be configured to provide a desired pattern by programming the array of plungers such that certain of the plungers are in an "up" or actuated configuration. This arrangement of "up" and "down" plungers forms a pattern composed of protruding and recessed features which can then be impressed onto a polymer film coated substrate by applying a pressure to the template impressing the programmed configuration into the polymer film. The pattern impressed into the polymer film will be reproduced on the substrate by subsequent processing.

  8. Low-cost interference lithography

    E-Print Network [OSTI]

    Fucetola, Corey P.

    The authors report demonstration of a low-cost ( ? 1000 USD) interference lithography system based on a Lloyd’s mirror interferometer that is capable of ? 300?nm pitch patterning. The components include only a 405?nm GaN ...

  9. Nanofabrication of Optical Elements for SXR and EUV Applications: Ion Beam Lithography as a New Approach

    SciTech Connect (OSTI)

    Lenz, J. [Institute for X-Optics, RheinAhrCampus Remagen, University of Applied Sciences Koblenz, Suedallee 2, 53424 Remagen (Germany); Research Group Electron Microscopy and Analytics, caesar Research Center, Ludwig-Erhard-Allee 2, 53175 Bonn (Germany); Krupp, N.; Irsen, S. [Research Group Electron Microscopy and Analytics, caesar Research Center, Ludwig-Erhard-Allee 2, 53175 Bonn (Germany); Wilhein, T. [Institute for X-Optics, RheinAhrCampus Remagen, University of Applied Sciences Koblenz, Suedallee 2, 53424 Remagen (Germany)

    2011-09-09

    Diffractive optical elements are important components for applications in soft x-ray and extreme ultraviolet radiation. At present, the standard fabrication method for such optics is based on electron beam lithography followed by nanostructuring. This requires a series of complex processes including exposure, reactive ion-etching, and electro-plating. We report on experiments showing the single-step fabrication of such elements using ion beam lithography. Both transmission and reflection gratings were fabricated and successfully implemented as spectrometers at laboratory soft x-ray sources. Additionally, first steps toward zone plate fabrication are described.

  10. Development of an immersion maskless lithography system

    E-Print Network [OSTI]

    Chao, David, Ph. D. Massachusetts Institute of Technology

    2005-01-01

    As lithography quickly approaches its limits with current technologies, a host of new ideas is being proposed in hopes of pushing lithography to new levels of performance. The work presented in this thesis explores the use ...

  11. Masked multichannel analyzer

    DOE Patents [OSTI]

    Winiecki, A.L.; Kroop, D.C.; McGee, M.K.; Lenkszus, F.R.

    1984-01-01

    An analytical instrument and particularly a time-of-flight-mass spectrometer for processing a large number of analog signals irregularly spaced over a spectrum, with programmable masking of portions of the spectrum where signals are unlikely in order to reduce memory requirements and/or with a signal capturing assembly having a plurality of signal capturing devices fewer in number than the analog signals for use in repeated cycles within the data processing time period.

  12. Masked multichannel analyzer

    DOE Patents [OSTI]

    Winiecki, Alan L. (Downers Grove, IL); Kroop, David C. (Columbia, MD); McGee, Marilyn K. (Colorado Springs, CO); Lenkszus, Frank R. (Woodridge, IL)

    1986-01-01

    An analytical instrument and particularly a time-of-flight-mass spectrometer for processing a large number of analog signals irregularly spaced over a spectrum, with programmable masking of portions of the spectrum where signals are unlikely in order to reduce memory requirements and/or with a signal capturing assembly having a plurality of signal capturing devices fewer in number than the analog signals for use in repeated cycles within the data processing time period.

  13. Wafer chamber having a gas curtain for extreme-UV lithography

    DOE Patents [OSTI]

    Kanouff, Michael P. (Livermore, CA); Ray-Chaudhuri, Avijit K. (Livermore, CA)

    2001-01-01

    An EUVL device includes a wafer chamber that is separated from the upstream optics by a barrier having an aperture that is permeable to the inert gas. Maintaining an inert gas curtain in the proximity of a wafer positioned in a chamber of an extreme ultraviolet lithography device can effectively prevent contaminants from reaching the optics in an extreme ultraviolet photolithography device even though solid window filters are not employed between the source of reflected radiation, e.g., the camera, and the wafer. The inert gas removes the contaminants by entrainment.

  14. X-ray lithography source

    DOE Patents [OSTI]

    Piestrup, Melvin A. (Woodside, CA); Boyers, David G. (Mountain View, CA); Pincus, Cary (Sunnyvale, CA)

    1991-01-01

    A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and elminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an exellent moderate-priced X-ray source for lithography.

  15. Scattering with angular limitation projection electron beam lithography for suboptical lithography

    E-Print Network [OSTI]

    Harriott, Lloyd R.

    Scattering with angular limitation projection electron beam lithography for suboptical lithography era early in the next century. The scattering with angular limitation projection electron-beam lithography SCALPEL approach combines the high resolution and wide process latitude inherent in electron beam

  16. Photo-lithography of xanthate precursor poly(p-phenylenevinylene...

    Office of Scientific and Technical Information (OSTI)

    Conference: Photo-lithography of xanthate precursor poly(p-phenylenevinylene) polymers. Citation Details In-Document Search Title: Photo-lithography of xanthate precursor...

  17. Carbon contamination topography analysis of EUV masks

    E-Print Network [OSTI]

    Fan, Y.-J.

    2010-01-01

    mask surface. but also the topography of the contaminatedCarbon Contamination Topography Analysis of EUV Masks Yu-Jenpossible contamination topography. Lithographic simulations

  18. Extreme-UV lithography system

    DOE Patents [OSTI]

    Replogle, William C. (Livermore, CA); Sweatt, William C. (Albuquerque, NM)

    2001-01-01

    A photolithography system that employs a condenser that includes a series of aspheric mirrors on one side of a small, incoherent source of radiation producing a series of beams is provided. Each aspheric mirror images the quasi point source into a curved line segment. A relatively small arc of the ring image is needed by the camera; all of the beams are so manipulated that they all fall onto this same arc needed by the camera. Also, all of the beams are aimed through the camera's virtual entrance pupil. The condenser includes a correcting mirror for reshaping a beam segment which improves the overall system efficiency. The condenser efficiently fills the larger radius ringfield created by today's advanced camera designs. The system further includes (i) means for adjusting the intensity profile at the camera's entrance pupil or (ii) means for partially shielding the illumination imaging onto the mask or wafer. The adjusting means can, for example, change at least one of: (i) partial coherence of the photolithography system, (ii) mask image illumination uniformity on the wafer or (iii) centroid position of the illumination flux in the entrance pupil. A particularly preferred adjusting means includes at least one vignetting mask that covers at least a portion of the at least two substantially equal radial segments of the parent aspheric mirror.

  19. Coatings on reflective mask substrates

    DOE Patents [OSTI]

    Tong, William Man-Wai (Oakland, CA); Taylor, John S. (Livermore, CA); Hector, Scott D. (Oakland, CA); Mangat, Pawitter J. S. (Gilbert, AZ); Stivers, Alan R. (San Jose, CA); Kofron, Patrick G. (San Jose, CA); Thompson, Matthew A. (Austin, TX)

    2002-01-01

    A process for creating a mask substrate involving depositing: 1) a coating on one or both sides of a low thermal expansion material EUVL mask substrate to improve defect inspection, surface finishing, and defect levels; and 2) a high dielectric coating, on the backside to facilitate electrostatic chucking and to correct for any bowing caused by the stress imbalance imparted by either other deposited coatings or the multilayer coating of the mask substrate. An film, such as TaSi, may be deposited on the front side and/or back of the low thermal expansion material before the material coating to balance the stress. The low thermal expansion material with a silicon overlayer and a silicon and/or other conductive underlayer enables improved defect inspection and stress balancing.

  20. Extreme-UV lithography condenser

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Sweeney, Donald W. (San Ramon, CA); Shafer, David (Fairfield, CT); McGuire, James (Pasadena, CA)

    2001-01-01

    Condenser system for use with a ringfield camera in projection lithography where the condenser includes a series of segments of a parent aspheric mirror having one foci at a quasi-point source of radiation and the other foci at the radius of a ringfield have all but one or all of their beams translated and rotated by sets of mirrors such that all of the beams pass through the real entrance pupil of a ringfield camera about one of the beams and fall onto the ringfield radius as a coincident image as an arc of the ringfield. The condenser has a set of correcting mirrors with one of the correcting mirrors of each set, or a mirror that is common to said sets of mirrors, from which the radiation emanates, is a concave mirror that is positioned to shape a beam segment having a chord angle of about 25 to 85 degrees into a second beam segment having a chord angle of about 0 to 60 degrees.

  1. Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist

    E-Print Network [OSTI]

    Winston, Donald

    A scanning-helium-ion-beam microscope is now commercially available. This microscope can be used to perform lithography similar to, but of potentially higher resolution than, scanning electron-beam lithography. This article ...

  2. Sub-10-nm lithography with light-ion beams

    E-Print Network [OSTI]

    Winston, Donald, Ph. D. Massachusetts Institute of Technology

    2012-01-01

    Scanning-electron-beam lithography (SEBL) is the workhorse of nanoscale lithography in part because of the high brightness of the Schottky source of electrons, but also benefiting from decades of incremental innovation and ...

  3. Mask Edge Effects in Optical Lithography and Chip Level Modeling Methods

    E-Print Network [OSTI]

    Miller, Marshal

    2010-01-01

    Transmission for Chromeless PSM . Grating Based Experimentalvs. Duty Cycle for MoSi Att-PSM MoSi 0 th Order Transmissionfor MoSi Att-PSM . . . . . . . . . MoSi Compared to Ultra

  4. Residue-free fabrication of high-performance graphene devices by patterned PMMA stencil mask

    SciTech Connect (OSTI)

    Shih, Fu-Yu [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Chen, Shao-Yu; Wu, Tsuei-Shin; Wang, Wei-Hua, E-mail: wwang@sinica.edu.tw [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Liu, Cheng-Hua; Chen, Yang-Fang [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Ho, Po-Hsun; Chen, Chun-Wei [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

    2014-06-15

    Two-dimensional (2D) atomic crystals and their hybrid structures have recently attracted much attention due to their potential applications. The fabrication of metallic contacts or nanostructures on 2D materials is very common and generally achieved by performing electron-beam (e-beam) lithography. However, e-beam lithography is not applicable in certain situations, e.g., cases in which the e-beam resist does not adhere to the substrates or the intrinsic properties of the 2D materials are greatly altered and degraded. Here, we present a residue-free approach for fabricating high-performance graphene devices by patterning a thin film of e-beam resist as a stencil mask. This technique can be generally applied to substrates with varying surface conditions, while causing negligible residues on graphene. The technique also preserves the design flexibility offered by e-beam lithography and therefore allows us to fabricate multi-probe metallic contacts. The graphene field-effect transistors fabricated by this method exhibit smooth surfaces, high mobility, and distinct magnetotransport properties, confirming the advantages and versatility of the presented residue-free technique for the fabrication of devices composed of 2D materials.

  5. MoRu/Be multilayers for extreme ultraviolet applications

    DOE Patents [OSTI]

    Bajt, Sasa C. (Livermore, CA); Wall, Mark A. (Stockton, CA)

    2001-01-01

    High reflectance, low intrinsic roughness and low stress multilayer systems for extreme ultraviolet (EUV) lithography comprise amorphous layers MoRu and crystalline Be layers. Reflectance greater than 70% has been demonstrated for MoRu/Be multilayers with 50 bilayer pairs. Optical throughput of MoRu/Be multilayers can be 30-40% higher than that of Mo/Be multilayer coatings. The throughput can be improved using a diffusion barrier to make sharper interfaces. A capping layer on the top surface of the multilayer improves the long-term reflectance and EUV radiation stability of the multilayer by forming a very thin native oxide that is water resistant.

  6. Demonstration of electronic pattern switching and 10x pattern demagnification in a maskless micro-ion beam reduction lithography system

    SciTech Connect (OSTI)

    Ngo, V.V.; Akker, B.; Leung, K.N.; Noh, I.; Scott, K.L.; Wilde, S.

    2002-05-31

    A proof-of-principle ion projection lithography (IPL) system called Maskless Micro-ion beam Reduction Lithography (MMRL) has been developed and tested at the Lawrence Berkeley National Laboratory (LBNL) for future integrated circuits (ICs) manufacturing and thin film media patterning [1]. This MMRL system is aimed at completely eliminating the first stage of the conventional IPL system [2] that contains the complicated beam optics design in front of the stencil mask and the mask itself. It consists of a multicusp RF plasma generator, a multi-beamlet pattern generator, and an all-electrostatic ion optical column. Results from ion beam exposures on PMMA and Shipley UVII-HS resists using 75 keV H+ are presented in this paper. Proof-of-principle electronic pattern switching together with 10x reduction ion optics (using a pattern generator made of nine 50-{micro}m switchable apertures) has been performed and is reported in this paper. In addition, the fabrication of a micro-fabricated pattern generator [3] on an SOI membrane is also presented.

  7. Nanofabrication on unconventional substrates using transferred hard masks

    E-Print Network [OSTI]

    Li, Luozhou

    A major challenge in nanofabrication is to pattern unconventional substrates that cannot be processed for a variety of reasons, such as incompatibility with spin coating, electron beam lithography, optical lithography, or ...

  8. Laser direct write system for fabricating seamless roll-to-roll lithography tools

    E-Print Network [OSTI]

    Petrzelka, Joseph E.

    Implementations of roll to roll contact lithography require new approaches towards manufacturing tooling, including stamps for roll to roll nanoimprint lithography (NIL) and soft lithography. Suitable roll based tools must ...

  9. Multilevel interference lithography--fabricating sub-wavelength periodic nanostructures

    E-Print Network [OSTI]

    Chang, Chih-Hao, 1980-

    2008-01-01

    Periodic nanostructures have many exciting applications, including high-energy spectroscopy, patterned magnetic media, photonic crystals, and templates for self-assembly. Interference lithography (IL) is an attractive ...

  10. Resolution Improvement and Pattern Generator Development for theMaskless Micro-Ion-Beam Reduction Lithography System

    SciTech Connect (OSTI)

    Jiang, Ximan

    2006-05-18

    The shrinking of IC devices has followed the Moore's Law for over three decades, which states that the density of transistors on integrated circuits will double about every two years. This great achievement is obtained via continuous advance in lithography technology. With the adoption of complicated resolution enhancement technologies, such as the phase shifting mask (PSM), the optical proximity correction (OPC), optical lithography with wavelength of 193 nm has enabled 45 nm printing by immersion method. However, this achievement comes together with the skyrocketing cost of masks, which makes the production of low volume application-specific IC (ASIC) impractical. In order to provide an economical lithography approach for low to medium volume advanced IC fabrication, a maskless ion beam lithography method, called Maskless Micro-ion-beam Reduction Lithography (MMRL), has been developed in the Lawrence Berkeley National Laboratory. The development of the prototype MMRL system has been described by Dr. Vinh Van Ngo in his Ph.D. thesis. But the resolution realized on the prototype MMRL system was far from the design expectation. In order to improve the resolution of the MMRL system, the ion optical system has been investigated. By integrating a field-free limiting aperture into the optical column, reducing the electromagnetic interference and cleaning the RF plasma, the resolution has been improved to around 50 nm. Computational analysis indicates that the MMRL system can be operated with an exposure field size of 0.25 mm and a beam half angle of 1.0 mrad on the wafer plane. Ion-ion interactions have been studied with a two-particle physics model. The results are in excellent agreement with those published by the other research groups. The charge-interaction analysis of MMRL shows that the ion-ion interactions must be reduced in order to obtain a throughput higher than 10 wafers per hour on 300-mm wafers. In addition, two different maskless lithography strategies have been studied. The dependence of the throughput with the exposure field size and the speed of the mechanical stage has been investigated. In order to perform maskless lithography, different micro-fabricated pattern generators have been developed for the MMRL system. Ion beamlet switching has been successfully demonstrated on the MMRL system. A positive bias voltage around 10 volts is sufficient to switch off the ion current on the micro-fabricated pattern generators. Some unexpected problems, such as the high-energy secondary electron radiations, have been discovered during the experimental investigation. Thermal and structural analysis indicates that the aperture displacement error induced by thermal expansion can satisfy the 3{delta} CD requirement for lithography nodes down to 25 nm. The cross-talking effect near the surface and inside the apertures of the pattern generator has been simulated in a 3-D ray-tracing code. New pattern generator design has been proposed to reduce the cross-talking effect. In order to eliminate the surface charging effect caused by the secondary electrons, a new beam-switching scheme in which the switching electrodes are immersed in the plasma has been demonstrated on a mechanically fabricated pattern generator.

  11. Ice Lithography for Nanodevices Dimitar Vlassarev,

    E-Print Network [OSTI]

    Golovchenko, Jene A.

    as a mask for lift-off without the device degradation and contamination associated with e-beam imaging-dimensional structures, through-resist mapping and registration of nanostructures, and simple, contamination-free removal, see Support- ing Information). Our sample consists of single-walled car- bon nanotubes (SWCNTs) grown

  12. Lithography DOI: 10.1002/anie.200703525

    E-Print Network [OSTI]

    Doyle, Patrick S.

    -up approaches such as polymer phase separation,[8] molecular self-assembly,[9] or colloidal assem- bly[10 performed by flood exposing a spin-coated layer of photo- resist film through a phase mask, thus imposing extruded shape using a variety of polymer precursors.[24] The method also provides the ability to finely

  13. Interference Assisted Lithography for Patterning of 1D Gridded Design

    E-Print Network [OSTI]

    Kahng, Andrew B.

    , USA 78750 3 University of California at San Diego, La Jolla, CA, USA 92093 4 Tela Innovations, Inc Assisted Lithography (IAL) as a promising and cost-effective solution for extending lithography. IAL for pattern splitting, as well as to address concerns of significantly increased patterning cost. Nano

  14. Tailoring Nanostructures Using Copolymer Nanoimprint Lithography

    E-Print Network [OSTI]

    Pascal Thebault; Stefan Niedermayer; Stefan Landis; Nicolas Chaix; Patrick Guenoun; Jean Daillant; Xingkun Man; David Andelman; Henri Orland

    2012-07-12

    Finding affordable ways of generating high-density ordered nanostructures that can be transferred to a substrate is a major challenge for industrial applications like memories or optical devices with high resolution features. In this work, we report on a novel technique to direct self-assembled structures of block copolymers by NanoImprint Lithography. Surface energy of a reusable mold and nanorheology are used to organize the copolymers in defect-free structures over tens of micrometers in size. Versatile and controlled in-plane orientations of about 25 nm half-period lamellar nanostructures are achieved and, in particular, include applications to circular tracks of magnetic reading heads.

  15. Tailoring Nanostructures Using Copolymer Nanoimprint Lithography

    E-Print Network [OSTI]

    Thebault, Pascal; Landis, Stefan; Chaix, Nicolas; Guenoun, Patrick; Daillant, Jean; Man, Xingkun; Andelman, David; Orland, Henri

    2012-01-01

    Finding affordable ways of generating high-density ordered nanostructures that can be transferred to a substrate is a major challenge for industrial applications like memories or optical devices with high resolution features. In this work, we report on a novel technique to direct self-assembled structures of block copolymers by NanoImprint Lithography. Surface energy of a reusable mold and nanorheology are used to organize the copolymers in defect-free structures over tens of micrometers in size. Versatile and controlled in-plane orientations of about 25 nm half-period lamellar nanostructures are achieved and, in particular, include applications to circular tracks of magnetic reading heads.

  16. Multidimensional Simulation and Optimization of Hybrid Laser and Discharge Plasma Devices for EUV Lithography

    E-Print Network [OSTI]

    Harilal, S. S.

    advantages and disadvantages. In order to meet the requirements of the Intel Lithography Roadmap goals

  17. Graphene nanoribbon superlattices fabricated via He ion lithography

    SciTech Connect (OSTI)

    Archanjo, Braulio S.; Fragneaud, Benjamin; Gustavo Cançado, Luiz; Winston, Donald; Miao, Feng; Alberto Achete, Carlos; Medeiros-Ribeiro, Gilberto

    2014-05-12

    Single-step nano-lithography was performed on graphene sheets using a helium ion microscope. Parallel “defect” lines of ?1??m length and ?5?nm width were written to form nanoribbon gratings down to 20?nm pitch. Polarized Raman spectroscopy shows that crystallographic orientation of the nanoribbons was partially maintained at their lateral edges, indicating a high-fidelity lithography process. Furthermore, Raman analysis of large exposure areas with different ion doses reveals that He ions produce point defects with radii ? 2× smaller than do Ga ions, demonstrating that scanning-He{sup +}-beam lithography can texture graphene with less damage.

  18. Hollow laser self-confined plasma for extreme ultraviolet lithography and other applications

    E-Print Network [OSTI]

    Harilal, S. S.

    low ~about 4%!, stacked multilayers, of which the reflection adds up, are used or bent crystals which

  19. Mitigation of fast ions from laser-produced Sn plasma for an extreme ultraviolet lithography source

    E-Print Network [OSTI]

    Tillack, Mark

    of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0438 and the Center for Energy Research of the reduction of fast ion energy from laser-produced Sn plasma by introducing a low energy prepulse. The energy candidates. Because of the availability of optics, most of the efforts focus on in-band 2% bandwidth 13.5 nm

  20. Mass-limited Sn target irradiated by dual laser pulses for an extreme ultraviolet lithography source

    E-Print Network [OSTI]

    Najmabadi, Farrokh

    . However, at present, because of the high cost of the driving laser, the output power of the EUV light, and stable target supply is the key factor for lowering the critical requirements of the driving la- ser debris re- quires additional innovations for application to the practical EUV light source for HVM

  1. Enhancing extreme ultraviolet photons emission in laser produced plasmas for advanced lithography

    E-Print Network [OSTI]

    Harilal, S. S.

    subjected to laser beam energy with different intensities and laser wavelength to dual-beam lasers, i of vapor expansion rate, which can be produced as a result of droplet heating by pre-pulse laser energy, and the remaining part of the laser heats the plasma instead of inter- acting with the target. For obtaining

  2. Replication of photonic crystals by soft ultraviolet-nanoimprint lithography Michele Belotti, Jrmi Torres,a

    E-Print Network [OSTI]

    photopolymerization through a soft elastomer-based mold is applied to the fabrication of silicon-on-insulator slab of linear defects in the periodicity. Guiding occurs along the defect line, i.e., a missing row of holes forming the so-called W1 defect.5 In order to enhance this behavior, high dielectric contrast between core

  3. Free electron laser with masked chicane

    DOE Patents [OSTI]

    Nguyen, Dinh C. (Los Alamos, NM); Carlsten, Bruce E. (Los Alamos, NM)

    1999-01-01

    A free electron laser (FEL) is provided with an accelerator for outputting electron beam pulses; a buncher for modulating each one of the electron beam pulses to form each pulse into longitudinally dispersed bunches of electrons; and a wiggler for generating coherent light from the longitudinally dispersed bunches of electrons. The electron beam buncher is a chicane having a mask for physically modulating the electron beam pulses to form a series of electron beam bunches for input to the wiggler. In a preferred embodiment, the mask is located in the chicane at a position where each electron beam pulse has a maximum dispersion.

  4. OSIRIS Software: The Mask Designer Tool

    E-Print Network [OSTI]

    J. I. Gonzalez-Serrano; M. Sanchez-Portal; H. Castaneda; R. Quirk; E. D. de Miguel; M. Aguiar; J. Cepa

    2006-02-23

    OSIRIS is a Day One instrument that will be available at the 10m GTC telescope which is being built at La Palma observatory in the Canary Islands. This optical instrument is designed to obtain wide-field narrow-band images using tunable filters and to do low-resolution spectroscopy in both long-slit and multislit modes. For the multislit spectroscopy mode, we have developed a software to assist the observers to design focal plane masks. In this paper we describe the characteristics of this Mask Designer tool. We discuss the main design concepts, the functionality and particular features of the software.

  5. Lithography-driven design for manufacturing in nanometer- era VLSI

    E-Print Network [OSTI]

    Park, Chul-Hong

    2008-01-01

    I.5: Examples of phase shift mask: (a) alternating PSM, (b)attenuated PSM and (c) chromeless PSM. . . . . . . . . . . . . . . Figure I.6:

  6. 'The Final Struggle': The Art of the Soviet Death Mask

    E-Print Network [OSTI]

    Neumeyer, Joy

    2015-01-01

    methods, but the casting of death masks continued. 15 Theothers. 20 The process of casting a death mask has remainedtypical maximum window for casting is three days. With the

  7. Mask Aligner (Carl Suss MJB3)

    E-Print Network [OSTI]

    Subramanian, Venkat

    switches · Turn on the power supply unit · Flip switch on power supply unit and press "Lamp" on the power supply unit (allow 5 minutes to warm up) · Press "Power" on the mask aligner N2 CA PV power supply unit #12;Mode 1: Vacuum Contact (sub micron resolution) · Place wafer on chuck · Press the green "HP

  8. Metrology for electron-beam lithography and resist contrast at the sub-10 nm scale

    E-Print Network [OSTI]

    Duan, Huigao

    Exploring the resolution limit of electron-beam lithography is of great interest both scientifically and technologically. However, when electron-beam lithography approaches its resolution limit, imaging and metrology of ...

  9. High resolution imaging and lithography using interference of light and surface plasmon waves

    E-Print Network [OSTI]

    Kim, Yang-Hyo

    2007-01-01

    The resolution of optical imaging and lithography is limited by the wave nature of light. Studies have been undertaken to overcome the diffraction limit for imaging and lithography. In our lab, the standing wave surface ...

  10. Design and prototype : a manufacturing system for the soft lithography technique

    E-Print Network [OSTI]

    Cao, Arthur Y. (Arthur Yao)

    2006-01-01

    Ever since 1998 when the term "soft lithography" was first created, soft lithography techniques have drawn close attention of the academia and the industry. Micro contact printing is by far the most widely used soft ...

  11. The impact of reverberant self-masking and overlap-masking effects on speech intelligibility by cochlear implant listeners (L)

    E-Print Network [OSTI]

    Kokkinakis, Kostas; Loizou, Philipos C.

    2011-05-05

    The purpose of this study is to determine the relative impact of reverberant self-masking and overlap-masking effects on speech intelligibility by cochlear implant listeners. Sentences were presented in two conditions ...

  12. Translational-symmetry alternating phase shifting mask grating mark used in a linear measurement model of lithographic projection lens aberrations

    SciTech Connect (OSTI)

    Qiu Zicheng; Wang Xiangzhao; Bi Qunyu; Yuan Qiongyan; Peng Bo; Duan Lifeng

    2009-07-01

    A linear measurement model of lithographic projection lens aberrations is studied numerically based on the Hopkins theory of partially-coherent imaging and positive resist optical lithography (PROLITH) simulation. In this linearity model, the correlation between the mark's structure and its sensitivities to aberrations is analyzed. A method to design a mark with high sensitivity is proved and declared. By use of this method, a translational-symmetry alternating phase shifting mask (Alt-PSM) grating mark is redesigned with all of the even orders, {+-}3rd and {+-}5th order diffraction light missing. In the evaluation simulation, the measurement accuracies of aberrations prove to be enhanced apparently by use of the redesigned mark instead of the old ones.

  13. Geometry of nanopore devices fabricated by electron beam lithography: Simulations and experimental comparisons

    E-Print Network [OSTI]

    Nair, Sankar

    Geometry of nanopore devices fabricated by electron beam lithography: Simulations and experimental 2013 Keywords: Nanopore Simulation Electron beam lithography Penelope Nanotechnology Monte Carlo a b be fabricated by electron beam lithography (EBL) with high density (on the order of 10 devices per cm2

  14. Lithography and Design in Partnership: A New Roadmap Andrew B. Kahng

    E-Print Network [OSTI]

    Kahng, Andrew B.

    Lithography and Design in Partnership: A New Roadmap Andrew B. Kahng UCSD Departments of CSE roadmap' between lithography and design from several perspectives. First, we examine cultural gaps and other intrinsic barriers to a shared roadmap. Second, we discuss how lithography technol- ogy can change

  15. Microphotonic parabolic light directors fabricated by two-photon lithography

    SciTech Connect (OSTI)

    Atwater, Jackson H; Spinelli, P.; Kosten, Emily D; Parsons, J.; Van Lare, C; Van de Groep, J; Garcia de Abajo, J.; Polman, Albert; Atwater, Harry A.

    2011-01-01

    We have fabricated microphotonic parabolic light directors using two-photon lithography, thin-film processing, and aperture formation by focused ion beam lithography. Optical transmission measurements through upright parabolic directors 22 ?m high and 10 ?m in diameter exhibit strong beam directivity with a beam divergence of 5.6°, in reasonable agreement with ray-tracing and full-field electromagnetic simulations. The results indicate the suitability of microphotonic parabolic light directors for producing collimated beams for applications in advanced solar cell and light-emitting diode designs.

  16. Resolution Improvement and Pattern Generator Development for the Maskless Micro-Ion-Beam Reduction Lithography System

    E-Print Network [OSTI]

    Jiang, Ximan

    2006-01-01

    such as the phase shifting mask (PSM), the optical proximityCODE), phase shifting mask (PSM) and optical proximitylens. A phase shifting mask (PSM) also works in a similar

  17. Dose masking feature for BNCT radiotherapy planning

    DOE Patents [OSTI]

    Cook, Jeremy L. (Greeley, CO); Wessol, Daniel E. (Bozeman, MT); Wheeler, Floyd J. (Idaho Falls, ID)

    2000-01-01

    A system for displaying an accurate model of isodoses to be used in radiotherapy so that appropriate planning can be performed prior to actual treatment on a patient. The nature of the simulation of the radiotherapy planning for BNCT and Fast Neutron Therapy, etc., requires that the doses be computed in the entire volume. The "entire volume" includes the patient and beam geometries as well as the air spaces in between. Isodoses derived from the computed doses will therefore extend into the air regions between the patient and beam geometries and thus depict the unrealistic possibility that radiation deposition occurs in regions containing no physical media. This problem is solved by computing the doses for the entire geometry and then masking the physical and air regions along with the isodose contours superimposed over the patient image at the corresponding plane. The user is thus able to mask out (remove) the contour lines from the unwanted areas of the image by selecting the appropriate contour masking region from the raster image.

  18. Ultratech Develops an Improved Lithography Tool for LED Wafer Manufacturing

    Broader source: Energy.gov [DOE]

    Ultratech modified an existing lithography tool used for semiconductor manufacturing to better meet the cost and performance targets of the high-brightness LED manufacturing industry. The goal was to make the equipment compatible with the wide range of substrate diameters and thicknesses prevalent in the industry while reducing the capital cost and the overall cost of ownership (COO).

  19. Digital microfluidics using soft lithography{ John Paul Urbanski,a

    E-Print Network [OSTI]

    Amarasinghe, Saman

    Digital microfluidics using soft lithography{ John Paul Urbanski,a William Thies,b Christopher published as an Advance Article on the web 29th November 2005 DOI: 10.1039/b510127a Although microfluidic software to drive the pumps, valves, and electrodes used to manipulate fluids in microfluidic devices

  20. Ultrathin fluorinated diamondlike carbon coating for nanoimprint lithography imprinters

    E-Print Network [OSTI]

    Krchnavek, Robert R.

    Ultrathin fluorinated diamondlike carbon coating for nanoimprint lithography imprinters Ryan W-DLC is used as a NIL imprinter coating to provide this durable antiwear, antistick layer. Previous works10,11 have shown that DLC is a durable coating with a low surface energy 40 mJ/m2 . The fluorinated self

  1. Optimizing laser produced plasmas for efficient extreme ultraviolet and soft X-ray light sources

    SciTech Connect (OSTI)

    Sizyuk, Tatyana; Hassanein, Ahmed [Center for Materials under Extreme Environment, School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

    2014-08-15

    Photon sources produced by laser beams with moderate laser intensities, up to 10{sup 14?}W/cm{sup 2}, are being developed for many industrial applications. The performance requirements for high volume manufacture devices necessitate extensive experimental research supported by theoretical plasma analysis and modeling predictions. We simulated laser produced plasma sources currently being developed for several applications such as extreme ultraviolet lithography using 13.5%?±?1% nm bandwidth, possibly beyond extreme ultraviolet lithography using 6.× nm wavelengths, and water-window microscopy utilizing 2.48?nm (La-?) and 2.88?nm (He-?) emission. We comprehensively modeled plasma evolution from solid/liquid tin, gadolinium, and nitrogen targets as three promising materials for the above described sources, respectively. Results of our analysis for plasma characteristics during the entire course of plasma evolution showed the dependence of source conversion efficiency (CE), i.e., laser energy to photons at the desired wavelength, on plasma electron density gradient. Our results showed that utilizing laser intensities which produce hotter plasma than the optimum emission temperatures allows increasing CE for all considered sources that, however, restricted by the reabsorption processes around the main emission region and this restriction is especially actual for the 6.×?nm sources.

  2. Ultraviolet selective silicon photodiode 

    E-Print Network [OSTI]

    Chintapalli, Koteswara Rao

    1992-01-01

    (' silicon surfa&(& that n&ost of t h&) phologeneraied hole-el( & tron pairs are k&st by surface rccornbinai ion before being nolle&. trxl hy a pr). jun?i, ion. The major cause of surl'a&. e re?omhination is probably due Io lifetim(. shortening ol' Lhe...Luation degrades by &legr(es during (xposure Io high-cncrgy photo(&s such as in ultraviolet light. The second approa?h is a S&:hottky-b))rricr Iype. ol' photodiodc consisting of a iranspar()nt, thin metal film [I I]. ln I. his d(vi?e, ii, is dif%?ult to a...

  3. Method and apparatus for inspecting an EUV mask blank

    DOE Patents [OSTI]

    Goldberg, Kenneth A.

    2005-11-08

    An apparatus and method for at-wavelength EUV mask-blank characterization for inspection of moderate and low spatial frequency coating uniformity using a synchrotron or other source of EUV light. The apparatus provides for rapid, non-destruction, non-contact, at-wavelength qualification of large mask areas, and can be self-calibrating or be calibrated to well-characterized reference samples. It can further check for spatial variation of mask reflectivity or for global differences among masks. The apparatus and method is particularly suited for inspection of coating uniformity and quality and can detect defects in the order of 50 .mu.m and above.

  4. Ultraviolet radiation induced discharge laser

    DOE Patents [OSTI]

    Gilson, Verle A. (Livermore, CA); Schriever, Richard L. (Livermore, CA); Shearer, James W. (Livermore, CA)

    1978-01-01

    An ultraviolet radiation source associated with a suitable cathode-anode electrode structure, disposed in a gas-filled cavity of a high pressure pulsed laser, such as a transverse electric atmosphere (TEA) laser, to achieve free electron production in the gas by photoelectric interaction between ultraviolet radiation and the cathode prior to the gas-exciting cathode-to-anode electrical discharge, thereby providing volume ionization of the gas. The ultraviolet radiation is produced by a light source or by a spark discharge.

  5. Low Cost Lithography Tool for High Brightness LED Manufacturing

    SciTech Connect (OSTI)

    Andrew Hawryluk; Emily True

    2012-06-30

    The objective of this activity was to address the need for improved manufacturing tools for LEDs. Improvements include lower cost (both capital equipment cost reductions and cost-ofownership reductions), better automation and better yields. To meet the DOE objective of $1- 2/kilolumen, it will be necessary to develop these highly automated manufacturing tools. Lithography is used extensively in the fabrication of high-brightness LEDs, but the tools used to date are not scalable to high-volume manufacturing. This activity addressed the LED lithography process. During R&D and low volume manufacturing, most LED companies use contact-printers. However, several industries have shown that these printers are incompatible with high volume manufacturing and the LED industry needs to evolve to projection steppers. The need for projection lithography tools for LED manufacturing is identified in the Solid State Lighting Manufacturing Roadmap Draft, June 2009. The Roadmap states that Projection tools are needed by 2011. This work will modify a stepper, originally designed for semiconductor manufacturing, for use in LED manufacturing. This work addresses improvements to yield, material handling, automation and throughput for LED manufacturing while reducing the capital equipment cost.

  6. On the Cost of Lazy Engineering for Masked Software Implementations

    E-Print Network [OSTI]

    International Association for Cryptologic Research (IACR)

    On the Cost of Lazy Engineering for Masked Software Implementations Josep Balasch1 , Benedikt Engineering-ESAT/COSIC and iMinds Kasteelpark Arenberg 10, B-3001 Leuven-Heverlee, Belgium. 2 ICTEAM. As a result, implementing masking securely can be a time-consuming engineering problem. This is in strong

  7. Nodal photolithography : lithography via far-field optical nodes in the resist

    E-Print Network [OSTI]

    Winston, Donald, S.M. Massachusetts Institute of Technology

    2008-01-01

    In this thesis, I investigate one approach - stimulated emission depletion - to surmounting the diffraction limitation of optical lithography. This approach uses farfield optical nodes to orchestrate reversible, saturable ...

  8. Development of a microfluidic device for patterning multiple species by scanning probe lithography 

    E-Print Network [OSTI]

    Rivas Cardona, Juan Alberto

    2009-06-02

    Scanning Probe Lithography (SPL) is a versatile nanofabrication platform that leverages microfluidic “ink” delivery systems with Scanning Probe Microscopy (SPM) for generating surface-patterned chemical functionality on ...

  9. Low thermal distortion extreme-UV lithography reticle

    DOE Patents [OSTI]

    Gianoulakis, Steven E. (Albuquerque, NM); Ray-Chaudhuri, Avijit K. (Livermore, CA)

    2001-01-01

    Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

  10. Low thermal distortion extreme-UV lithography reticle

    DOE Patents [OSTI]

    Gianoulakis, Steven E. (Albuquerque, NM); Ray-Chaudhuri, Avijit K. (Livermore, CA)

    2002-01-01

    Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

  11. Low thermal distortion Extreme-UV lithography reticle and method

    DOE Patents [OSTI]

    Gianoulakis, Steven E. (Albuquerque, NM); Ray-Chaudhuri, Avijit K. (Livermore, CA)

    2002-01-01

    Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

  12. Chains of quantum dot molecules grown on Si surface pre-patterned by ion-assisted nanoimprint lithography

    SciTech Connect (OSTI)

    Smagina, Zh. V.; Stepina, N. P., E-mail: stepina@isp.nsc.ru; Zinovyev, V. A.; Kuchinskaya, P. A. [Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Lavrenteva 13, 630090 Novosibirsk (Russian Federation); Novikov, P. L.; Dvurechenskii, A. V. [Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Lavrenteva 13, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, Pirogova, 2, 630090 Novosibirsk (Russian Federation)

    2014-10-13

    An original approach based on the combination of nanoimprint lithography and ion irradiation through mask has been developed for fabrication of large-area periodical pattern on Si(100). Using the selective etching of regions amorphized by ion irradiation ordered structures with grooves and ridges were obtained. The shape and depth of the relief were governed by ion energy and by the number of etching stages as well. Laterally ordered chains of Ge quantum dots were fabricated by molecular beam epitaxy of Ge on the pre-patterned Si substrates. For small amount of Ge deposited chains contain separate quantum dot molecules. The increase of deposition amount leads to overlapping of quantum dot molecules with formation of dense homogeneous chains of quantum dots. It was shown that the residual irradiation-induced bulk defects underneath the grooves suppress nucleation of Ge islands at the bottom of grooves. On pre-patterned substrates with whole defect regions, etched quantum dots grow at the bottom of grooves. The observed location of Ge quantum dots is interpreted in terms of local strain-mediated surface chemical potential which controls the sites of islands nucleation. The local chemical potential is affected by additional strain formed by the residual defects. It was shown by molecular dynamics calculations that these defects form the compressive strain at the bottom of grooves.

  13. Plastic masters--rigid templates for soft lithography Salil P. Desai,a

    E-Print Network [OSTI]

    Voldman, Joel

    Plastic masters--rigid templates for soft lithography Salil P. Desai,a Dennis M. Freemanab and Joel plastic master molds for soft lithography directly from (poly)dimethysiloxane devices. Plastics masters without the need for cleanroom facilities. We have successfully demonstrated the use of plastics

  14. A microfluidic microbial fuel cell fabricated by soft lithography Fang Qian a,b,

    E-Print Network [OSTI]

    A microfluidic microbial fuel cell fabricated by soft lithography Fang Qian a,b, , Zhen He c microfluidic microbial fuel cell (MFC) platform built by soft-lithography tech- niques. The MFC design includes a unique sub-5 lL polydimethylsiloxane soft chamber featuring carbon cloth electrodes and microfluidic

  15. Multilayer resist methods for nanoimprint lithography on nonflat surfaces Xiaoyun Sun, Lei Zhuang,a)

    E-Print Network [OSTI]

    American Vacuum Society. S0734-211X 98 10106-3 I. INTRODUCTION Nanoimprint lithography NIL , a new approach of modifying the resist's chemical properties with radiation as in conventional lithography.1 NIL has issue for NIL to become a major li- thography tool is to imprint on nonflat surfaces. This article

  16. Quantum lithography with classical light: Generation of arbitrary patterns 

    E-Print Network [OSTI]

    Sun, Qingqing; Hemmer, Philip R.; Zubairy, M. Suhail

    2007-01-01

    stream_source_info PhysRevA.75.065803.pdf.txt stream_content_type text/plain stream_size 16287 Content-Encoding ISO-8859-1 stream_name PhysRevA.75.065803.pdf.txt Content-Type text/plain; charset=ISO-8859-1 Quantum... alternative meth- ods based on classical fields ?9?11?. In Ref. ?12?, a novel approach was proposed to implement quantum lithography using the classical light. This is accom- plished by correlating wave vector and frequency in a narrow band multiphoton...

  17. Mask-assisted seeded growth of segmented metallic heteronanostructures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Crane, Cameron C. [Univ. of Arkansas, Fayetteville, AR (United States); Tao, Jing [Brookhaven National Lab. (BNL), Upton, NY (United States); Wang, Feng [Univ. of Arkansas, Fayetteville, AR (United States); Zhu, Yimei [Brookhaven National Lab. (BNL), Upton, NY (United States); Chen, Jingyi [Univ. of Arkansas, Fayetteville, AR (United States)

    2014-12-04

    Controlling the deposition of exotic metals in the seeded growth of multi-metal nanostructures is challenging. This work describes a seeded growth method assisted by a mask for synthesis of segmented binary or ternary metal nanostructures. Silica is used as a mask to partially block the surface of a seed and a second metal is subsequently deposited on the exposed area, forming a bimetallic heterodimer. The initial demonstration was carried out on a Au seed, followed by deposition of Pd or Pt on the seed. It was found that Pd tends to spread out laterally on the seed while Pt inclines to grow vertically into branched topology on Au. Without removal of the SiO? mask, Pt could be further deposited on the unblocked Pd of the Pd-Au dimer to form a Pt-Pd-Au trimer. The mask-assisted seeded growth provides a general strategy to construct segmented metallic nanoarchitectures.

  18. Mask-assisted seeded growth of segmented metallic heteronanostructures

    SciTech Connect (OSTI)

    Crane, Cameron C.; Tao, Jing; Wang, Feng; Zhu, Yimei; Chen, Jingyi

    2014-11-24

    Controlling the deposition of exotic metals in the seeded growth of multi-metal nanostructures is challenging. This work describes a seeded growth method assisted by a mask for synthesis of segmented binary or ternary metal nanostructures. Silica is used as a mask to partially block the surface of a seed and a second metal is subsequently deposited on the exposed area, forming a bimetallic heterodimer. The initial demonstration was carried out on a Au seed, followed by deposition of Pd or Pt on the seed. It was found that Pd tends to spread out laterally on the seed while Pt inclines to grow vertically into branched topology on Au. Without removal of the SiO? mask, Pt could be further deposited on the unblocked Pd of the Pd-Au dimer to form a Pt-Pd-Au trimer. The mask-assisted seeded growth provides a general strategy to construct segmented metallic nanoarchitectures.

  19. Mask-Assisted Seeded Growth of Segmented Metallic Heteronanostructures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Crane, Cameron C.; Tao, Jing; Wang, Feng; Zhu, Yimei; Chen, Jingyi

    2014-12-04

    Controlling the deposition of exotic metals in the seeded growth of multi-metal nanostructures is challenging. This work describes a seeded growth method assisted by a mask for synthesis of segmented binary or ternary metal nanostructures. Silica is used as a mask to partially block the surface of a seed and a second metal is subsequently deposited on the exposed area, forming a bimetallic heterodimer. The initial demonstration was carried out on a Au seed, followed by deposition of Pd or Pt on the seed. It was found that Pd tends to spread out laterally on the seed while Pt inclinesmore »to grow vertically into branched topology on Au. Without removal of the SiO? mask, Pt could be further deposited on the unblocked Pd of the Pd-Au dimer to form a Pt-Pd-Au trimer. The mask-assisted seeded growth provides a general strategy to construct segmented metallic nanoarchitectures.« less

  20. Mask-Assisted Seeded Growth of Segmented Metallic Heteronanostructures

    SciTech Connect (OSTI)

    Crane, Cameron C.; Tao, Jing; Wang, Feng; Zhu, Yimei; Chen, Jingyi

    2014-12-04

    Controlling the deposition of exotic metals in the seeded growth of multi-metal nanostructures is challenging. This work describes a seeded growth method assisted by a mask for synthesis of segmented binary or ternary metal nanostructures. Silica is used as a mask to partially block the surface of a seed and a second metal is subsequently deposited on the exposed area, forming a bimetallic heterodimer. The initial demonstration was carried out on a Au seed, followed by deposition of Pd or Pt on the seed. It was found that Pd tends to spread out laterally on the seed while Pt inclines to grow vertically into branched topology on Au. Without removal of the SiO? mask, Pt could be further deposited on the unblocked Pd of the Pd-Au dimer to form a Pt-Pd-Au trimer. The mask-assisted seeded growth provides a general strategy to construct segmented metallic nanoarchitectures.

  1. Bubble masks for time-encoded imaging of fast neutrons.

    SciTech Connect (OSTI)

    Brubaker, Erik; Brennan, James S.; Marleau, Peter; Nowack, Aaron B.; Steele, John; Sweany, Melinda; Throckmorton, Daniel J.

    2013-09-01

    Time-encoded imaging is an approach to directional radiation detection that is being developed at SNL with a focus on fast neutron directional detection. In this technique, a time modulation of a detected neutron signal is induced-typically, a moving mask that attenuates neutrons with a time structure that depends on the source position. An important challenge in time-encoded imaging is to develop high-resolution two-dimensional imaging capabilities; building a mechanically moving high-resolution mask presents challenges both theoretical and technical. We have investigated an alternative to mechanical masks that replaces the solid mask with a liquid such as mineral oil. Instead of fixed blocks of solid material that move in pre-defined patterns, the oil is contained in tubing structures, and carefully introduced air gaps-bubbles-propagate through the tubing, generating moving patterns of oil mask elements and air apertures. Compared to current moving-mask techniques, the bubble mask is simple, since mechanical motion is replaced by gravity-driven bubble propagation; it is flexible, since arbitrary bubble patterns can be generated by a software-controlled valve actuator; and it is potentially high performance, since the tubing and bubble size can be tuned for high-resolution imaging requirements. We have built and tested various single-tube mask elements, and will present results on bubble introduction and propagation as a function of tubing size and cross-sectional shape; real-time bubble position tracking; neutron source imaging tests; and reconstruction techniques demonstrated on simple test data as well as a simulated full detector system.

  2. MASKS 2004 Invitation to 3D vision Step-by-Step Model Buidling

    E-Print Network [OSTI]

    Kosecka, Jana

    MASKS © 2004 Invitation to 3D vision Step-by-Step Model Buidling #12;MASKS © 2004 Invitation to 3D Reconstruction Sparse Structure and camera motion Landing Augmented Reality Vision Based Control #12;MASKS © 2004 Reconstruction #12;MASKS © 2004 Invitation to 3D vision Review Feature correspondence Projective Reconstruction

  3. Tabletop Nanometer Extreme Ultraviolet Imaging in an Extended Reflection Mode using Coherent Fresnel Ptychography

    E-Print Network [OSTI]

    Seaberg, Matthew D; Gardner, Dennis F; Shanblatt, Elisabeth R; Murnane, Margaret M; Kapteyn, Henry C; Adams, Daniel E

    2013-01-01

    We demonstrate high resolution extreme ultraviolet (EUV) coherent diffractive imaging in the most general reflection geometry by combining ptychography with tilted plane correction. This method makes it possible to image extended surfaces at any angle of incidence. Refocused light from a tabletop coherent high harmonic light source at 29 nm illuminates a nanopatterned surface at 45 degree angle of incidence. The reconstructed image contains quantitative amplitude and phase (in this case pattern height) information, comparing favorably with both scanning electron microscope and atomic force microscopy images. In the future, this approach will enable imaging of complex surfaces and nanostructures with sub-10 nm-spatial resolution and fs-temporal resolution, which will impact a broad range of nanoscience and nanotechnology including for direct application in actinic inspection in support of EUV lithography.

  4. Chemical Effect of Dry and Wet Cleaning of the Ru Protective Layer of the Extreme ultraviolet (EUV) Lithography Reflector

    E-Print Network [OSTI]

    Belau, Leonid

    2010-01-01

    Park, Physical Chemistry Chemical Y.B. He, et al. , JournalChemical Effect of Dry and Wet Cleaning of the Ru ProtectiveBerkeley, California 94720 Chemical Sciences Division,

  5. Coma measurement by use of an alternating phase-shifting mask mark with a specific phase width

    SciTech Connect (OSTI)

    Qiu Zicheng; Wang Xiangzhao; Yuan Qiongyan; Wang Fan

    2009-01-10

    The correlation between the coma sensitivity of the alternating phase-shifting mask (Alt-PSM) mark and the mark's structure is studied based on the Hopkins theory of partially coherent imaging and positive resist optical lithography (PROLITH) simulation. It is found that an optimized Alt-PSM mark with its phase width being two-thirds its pitch has a higher sensitivity to coma than Alt-PSM marks with the same pitch and the different phase widths. The pitch of the Alt-PSM mark is also optimized by PROLITH simulation, and the structure of p=1.92{lambda}/NA and pw=2p/3 proves to be with the highest sensitivity. The optimized Alt-PSM mark is used as a measurement mark to retrieve coma aberration from the projection optics in lithographic tools. In comparison with an ordinary Alt-PSM mark with its phase width being a half its pitch, the measurement accuracies of Z7 and Z14 apparently increase.

  6. Ultraviolet Completion of Flavour Models

    E-Print Network [OSTI]

    Ivo de Medeiros Varzielas; Luca Merlo

    2010-11-30

    Effective Flavour Models do not address questions related to the nature of the fundamental renormalisable theory at high energies. We study the ultraviolet completion of Flavour Models, which in general has the advantage of improving the predictivity of the effective models. In order to illustrate the important features we provide minimal completions for two known A4 models. We discuss the phenomenological implications of the explicit completions, such as lepton flavour violating contributions that arise through the exchange of messenger fields.

  7. Development of ion sources for ion projection lithography

    SciTech Connect (OSTI)

    Lee, Y.; Gough, R.A.; Kunkel, W.B.; Leung, K.N.; Perkins, L.T.

    1996-05-01

    Multicusp ion sources are capable of generating ion beams with low axial energy spread as required by the Ion Projection Lithography (IPL). Longitudinal ion energy spread has been studied in two different types of plasma discharge: the filament discharge ion source characterized by its low axial energy spread, and the RF-driven ion source characterized by its long source lifetime. For He{sup +} ions, longitudinal ion energy spreads of 1-2 eV were measured for a filament discharge multicusp ion source which is within the IPL device requirements. Ion beams with larger axial energy spread were observed in the RF-driven source. A double-chamber ion source has been designed which combines the advantages of low axial energy spread of the filament discharge ion source with the long lifetime of the RF-driven source. The energy spread of the double chamber source is lower than that of the RF-driven source.

  8. The development of a prototype Zone-Plate-Array Lithography (ZPAL) system

    E-Print Network [OSTI]

    Patel, Amil Ashok, 1979-

    2004-01-01

    The research presented in this paper aims to build a Zone-Plate-Array Lithography (ZPAL) prototype tool that will demonstrate the high-resolution, parallel patterning capabilities of the architecture. The experiment will ...

  9. Modeling the point-spread function in helium-ion lithography

    E-Print Network [OSTI]

    Winston, Donald

    We present here a hybrid approach to modeling helium-ion lithography that combines the power and ease-of-use of the Stopping and Range of Ions in Matter (SRIM) software with the results of recent work simulating secondary ...

  10. Resolution Limits of Electron-Beam Lithography toward the Atomic Scale

    E-Print Network [OSTI]

    Zhang, Lihua

    We investigated electron-beam lithography with an aberration-corrected scanning transmission electron microscope. We achieved 2 nm isolated feature size and 5 nm half-pitch in hydrogen silsesquioxane resist. We also analyzed ...

  11. Development of a simple, compact, low-cost interference lithography system

    E-Print Network [OSTI]

    Korre, Hasan

    Interference lithography (IL) has proven itself to be an enabling technology for nanofabrication. Within IL, issues of spatial phase distortion, fringe stability, and substrate development have been explored and addressed. ...

  12. Limiting factors in sub-10 nm scanning-electron-beam lithography

    E-Print Network [OSTI]

    Berggren, Karl K.

    Achieving the highest possible resolution using scanning-electron-beam lithography (SEBL) has become an increasingly urgent problem in recent years, as advances in various nanotechnology applications [ F. S. Bates and G. ...

  13. Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography

    E-Print Network [OSTI]

    Berggren, Karl K.

    The authors, demonstrated that 4.5-nm-half-pitch structures could be achieved using electron-beam lithography, followed by salty development. They also hypothesized a development mechanism for hydrogen silsesquioxane, ...

  14. Large area high density quantized magnetic disks fabricated using nanoimprint lithography

    E-Print Network [OSTI]

    for fabricating large area quantized magnetic disks QMDs using nanoimprint lithography NIL , electroplating or a via array. The other is that for high resolution an antireflection coating ARC layer is needed, which

  15. Contact region fidelity, sensitivity, and control in roll-based soft lithography

    E-Print Network [OSTI]

    Petrzelka, Joseph E

    2012-01-01

    Soft lithography is a printing process that uses small features on an elastomeric stamp to transfer micron and sub-micron patterns to a substrate. Translating this lab scale process to a roll-based manufacturing platform ...

  16. Nanometer-precision electron-beam lithography with applications in integrated optics

    E-Print Network [OSTI]

    Hastings, Jeffrey Todd, 1975-

    2003-01-01

    Scanning electron-beam lithography (SEBL) provides sub-10-nm resolution and arbitrary-pattern generation; however, SEBL's pattern-placement accuracy remains inadequate for future integrated-circuits and integrated-optical ...

  17. System for generating two-dimensional masks from a three-dimensional model using topological analysis

    DOE Patents [OSTI]

    Schiek, Richard (Albuquerque, NM)

    2006-06-20

    A method of generating two-dimensional masks from a three-dimensional model comprises providing a three-dimensional model representing a micro-electro-mechanical structure for manufacture and a description of process mask requirements, reducing the three-dimensional model to a topological description of unique cross sections, and selecting candidate masks from the unique cross sections and the cross section topology. The method further can comprise reconciling the candidate masks based on the process mask requirements description to produce two-dimensional process masks.

  18. Fabrication of ZnO photonic crystals by nanosphere lithography using inductively coupled-plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the ZnO/GaN heterojunction light emitting diodes

    SciTech Connect (OSTI)

    Chen, Shr-Jia; Chang, Chun-Ming; Kao, Jiann-Shiun; Chen, Fu-Rong; Tsai, Chuen-Horng [Engineering and System Science, National Tsing Hua University, Hsinchu, 30013 Taiwan (China); Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu, 300 Taiwan (China); Engineering and System Science, National Tsing Hua University, Hsinchu, 30013 Taiwan (China)

    2010-07-15

    This article reports fabrication of n-ZnO photonic crystal/p-GaN light emitting diode (LED) by nanosphere lithography to further booster the light efficiency. In this article, the fabrication of ZnO photonic crystals is carried out by nanosphere lithography using inductively coupled plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the n-ZnO/p-GaN heterojunction LEDs. The CH{sub 4}/H{sub 2}/Ar mixed gas gives high etching rate of n-ZnO film, which yields a better surface morphology and results less plasma-induced damages of the n-ZnO film. Optimal ZnO lattice parameters of 200 nm and air fill factor from 0.35 to 0.65 were obtained from fitting the spectrum of n-ZnO/p-GaN LED using a MATLAB code. In this article, we will show our recent result that a ZnO photonic crystal cylinder has been fabricated using polystyrene nanosphere mask with lattice parameter of 200 nm and radius of hole around 70 nm. Surface morphology of ZnO photonic crystal was examined by scanning electron microscope.

  19. Microgap ultra-violet detector

    DOE Patents [OSTI]

    Wuest, C.R.; Bionta, R.M.

    1994-09-20

    A microgap ultra-violet detector of photons with wavelengths less than 400 run (4,000 Angstroms) which comprises an anode and a cathode separated by a gas-filled gap and having an electric field placed across the gap is disclosed. Either the anode or the cathode is semi-transparent to UV light. Upon a UV photon striking the cathode an electron is expelled and accelerated across the gap by the electric field causing interactions with other electrons to create an electron avalanche which contacts the anode. The electron avalanche is detected and converted to an output pulse. 2 figs.

  20. Microgap ultra-violet detector

    DOE Patents [OSTI]

    Wuest, Craig R. (Danville, CA); Bionta, Richard M. (Livermore, CA)

    1994-01-01

    A microgap ultra-violet detector of photons with wavelengths less than 400 run (4000 Angstroms) which comprises an anode and a cathode separated by a gas-filled gap and having an electric field placed across the gap. Either the anode or the cathode is semi-transparent to UV light. Upon a UV photon striking the cathode an electron is expelled and accelerated across the gap by the electric field causing interactions with other electrons to create an electron avalanche which contacts the anode. The electron avalanche is detected and converted to an output pulse.

  1. Ga lithography in sputtered niobium for superconductive micro and nanowires

    SciTech Connect (OSTI)

    Henry, M. David; Wolfley, Steve; Monson, Todd; Lewis, Rupert

    2014-08-18

    This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12?nm deep with a 14?nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10??m by 10??m and 100??m by 100??m, demonstrate that doses above than 7.5?×?10{sup 15?}cm{sup ?2} at 30?kV provide adequate mask protection for a 205?nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75?nm wide by 10??m long connected to 50??m wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T{sub c})?=?7.7?K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.

  2. Simultaneous Feature Extraction and Selection Using a Masking Genetic Algorithm

    E-Print Network [OSTI]

    1 Simultaneous Feature Extraction and Selection Using a Masking Genetic Algorithm Michael L. Raymer: identification of functional water molecules bound to protein surfaces, and diagnosis of thyroid deficiency of feature extraction ­ defining new features in terms of the original feature set to facilitate more

  3. Mask Making in the NanoLab (Optical Pattern Generator)

    E-Print Network [OSTI]

    California at Irvine, University of

    design or arcs. Pattern Generator charge: $40.80/hour. There is a minimum 30 minute pattern generatorMask Making in the NanoLab (Optical Pattern Generator) Layout To submit a design, use any CAD software which generates a GDS, TDB or CIF file. GDS and TDB files need to be converted for the pattern

  4. ORIGINAL PAPER Vibration detection and discrimination in the masked birch

    E-Print Network [OSTI]

    Yack, Jayne E.

    ORIGINAL PAPER Vibration detection and discrimination in the masked birch caterpillar (Drepana-Verlag 2012 Abstract Leaf-borne vibrations are potentially important to caterpillars for communication they detect and discriminate between vibrations from relevant and non-relevant sources. We measured

  5. Affine Masking against Higher-Order Side Channel Analysis

    E-Print Network [OSTI]

    International Association for Cryptologic Research (IACR)

    the side channel leakage (e.g. the power consumption, the electromagnetic emana- tions) produced during variable is independent of any sensitive variable. This strategy ensures that the instantaneous leakage is independent of any sensitive variable, thus rendering SCA difficult to perform. The masking can

  6. Analysis of Optics and Mask Contamination in SEMATECH EUV Micro-Exposure Tools

    E-Print Network [OSTI]

    Wuest, Andrea

    2008-01-01

    Analysis of Optics and Mask Contamination in SEMATECHMioro^Exposure Tools IEUVI Optics Contamination/Lifetime TWG

  7. A next-generation EUV Fresnel zoneplate mask-imaging microscope

    E-Print Network [OSTI]

    Goldberg, Kenneth A.

    2012-01-01

    A next-generation EUV Fresnel zoneplate mask-imaginghigh-magnification all-EUV Fresnel zoneplate microscope, the

  8. Proceedings of NAMRI/SME, Vol. 39, 2011 Additive Manufacturing based on Optimized Mask Video

    E-Print Network [OSTI]

    Chen, Yong

    Proceedings of NAMRI/SME, Vol. 39, 2011 Additive Manufacturing based on Optimized Mask Video@usc.edu, (213) 740-7829 ABSTRACT Additive manufacturing (AM) processes based on mask image projection and resolution of built components. KEYWORDS Additive manufacturing, Solid freeform fabrication, Mask image

  9. Solar Dynamics Observatory/ Extreme Ultraviolet Variability Experiment

    E-Print Network [OSTI]

    Mojzsis, Stephen J.

    Solar Dynamics Observatory/ EVE Extreme Ultraviolet Variability Experiment Frequently Asked and model solar extreme ultraviolet irradiance variations due to solar flares, solar rotation, and solar and structure of the Sun. What is solar variability? Solar radiation varies on all time scales ranging from

  10. Fundamentals of embossing nanoimprint lithography in polymer substrates.

    SciTech Connect (OSTI)

    Simmons, Blake Alexander; King, William P.

    2011-02-01

    The convergence of micro-/nano-electromechanical systems (MEMS/NEMS) and biomedical industries is creating a need for innovation and discovery around materials, particularly in miniaturized systems that use polymers as the primary substrate. Polymers are ubiquitous in the microelectronics industry and are used as sensing materials, lithography tools, replication molds, microfluidics, nanofluidics, and biomedical devices. This diverse set of operational requirements dictates that the materials employed must possess different properties in order to reduce the cost of production, decrease the scale of devices to the appropriate degree, and generate engineered devices with new functional properties at cost-competitive levels of production. Nanoscale control of polymer deformation at a massive scale would enable breakthroughs in all of the aforementioned applications, but is currently beyond the current capabilities of mass manufacturing. This project was focused on developing a fundamental understanding of how polymers behave under different loads and environments at the nanoscale in terms of performance and fidelity in order to fill the most critical gaps in our current knowledgebase on this topic.

  11. Lithography with MeV Energy Ions for Biomedical Applications: Accelerator Considerations

    SciTech Connect (OSTI)

    Sangyuenyongpipat, S.; Whitlow, H. J.; Nakagawa, S. T.; Yoshida, E.

    2009-03-10

    MeV ion beam lithographies are very powerful techniques for 3D direct writing in positive or negative photoresist materials. Nanometer-scale rough structures, or clear areas with straight vertical sidewalls as thin as a few 10's of nm in a resist of a few nm to 100 {mu}m thickness can be made. These capabilities are particularly useful for lithography in cellular- and sub-cellular level biomedical research and technology applications. It can be used for tailor making special structures such as optical waveguides, biosensors, DNA sorters, spotting plates, systems for DNA, protein and cell separation, special cell-growth substrates and microfluidic lab-on-a-chip devices. Furthermore MeV ion beam lithography can be used for rapid prototyping, and also making master stamps and moulds for mass production by hot embossing and nanoimprint lithography. The accelerator requirements for three different high energy ion beam lithography techniques are overviewed. We consider the special requirements placed on the accelerator and how this is achieved for a commercial proton beam writing tool.

  12. Tin removal from extreme ultraviolet collector optics by inductively coupled plasma reactive ion etching

    SciTech Connect (OSTI)

    Shin, H.; Srivastava, S. N.; Ruzic, D. N. [Center for Plasma Material Interactions, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

    2008-05-15

    Tin (Sn) has the advantage of delivering higher conversion efficiency compared to other fuel materials (e.g., Xe or Li) in an extreme ultraviolet (EUV) source, a necessary component for the leading next generation lithography. However, the use of a condensable fuel in a lithography system leads to some additional challenges for maintaining a satisfactory lifetime of the collector optics. A critical issue leading to decreased mirror lifetime is the buildup of debris on the surface of the primary mirror that comes from the use of Sn in either gas discharge produced plasma (GDPP) or laser produced plasma (LPP). This leads to a decreased reflectivity from the added material thickness and increased surface roughness that contributes to scattering. Inductively coupled plasma reactive ion etching with halide ions is one potential solution to this problem. This article presents results for etch rate and selectivity of Sn over SiO{sub 2} and Ru. The Sn etch rate in a chlorine plasma is found to be much higher (of the order of hundreds of nm/min) than the etch rate of other materials. A thermally evaporated Sn on Ru sample was prepared and cleaned using an inductively coupled plasma etching method. Cleaning was confirmed using several material characterization techniques. Furthermore, a collector mock-up shell was then constructed and etching was performed on Sn samples prepared in a Sn EUV source using an optimized etching recipe. The sample surface before and after cleaning was analyzed by atomic force microscopy, x-ray photoelectron spectroscopy, and Auger electron spectroscopy. The results show the dependence of etch rate on the location of Sn samples placed on the collector mock-up shell.

  13. Comparison of infrared frequency selective surfaces fabricated by direct-write electron-beam and bilayer nanoimprint lithographies

    E-Print Network [OSTI]

    Krchnavek, Robert R.

    Comparison of infrared frequency selective surfaces fabricated by direct-write electron-beam-dipole resonant filters by direct-write electron-beam and nanoimprint lithographies. Such structures have been-write electron electron- beam lithography DEBL . Since DEBL is based on expo- sure of the resist point by point

  14. An optical parametric oscillator as a high-flux source of two-mode light for quantum lithography

    E-Print Network [OSTI]

    Dowling, Jonathan P.

    An optical parametric oscillator as a high-flux source of two-mode light for quantum lithography of contents for this issue, or go to the journal homepage for more Home Search Collections Journals About of Physics An optical parametric oscillator as a high-flux source of two-mode light for quantum lithography

  15. Using neutral metastable argon atoms and contamination lithography to form nanostructures in silicon, silicon dioxide, and gold

    E-Print Network [OSTI]

    Thywissen, Joseph

    Using neutral metastable argon atoms and contamination lithography to form nanostructures vapors present as dilute contaminants in the vacuum chamber, were used to create 80-nm features in Si, Si with similar contaminants present in a vacuum system to produce 8-nm features.1­3 This type of lithography

  16. Received 1 May 2013 | Accepted 26 Jul 2013 | Published 3 Sep 2013 Atomic layer lithography of wafer-scale

    E-Print Network [OSTI]

    Park, Namkyoo

    and high throughput. Here we introduce a new patterning technology based on atomic layer deposition lithography, combines atomic layer deposition (ALD) with `plug-and-peel' metal patterning using adhesive tapeARTICLE Received 1 May 2013 | Accepted 26 Jul 2013 | Published 3 Sep 2013 Atomic layer lithography

  17. 2496 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 16, NO. 11, NOVEMBER 2004 Soft Lithography Replica Molding of Critically

    E-Print Network [OSTI]

    Huang, Yanyi

    Molding of Critically Coupled Polymer Microring Resonators Joyce K. S. Poon, Student Member, IEEE, Yanyi lithography replica molding to fabricate unclad polystyrene (PS) and clad SU-8 microring resonator filters of the microring resonator filters show the practicality of soft-lithography replica molding for the fabrication

  18. Soft X-ray Lithography Beamline at the Siam Photon Laboratory

    SciTech Connect (OSTI)

    Klysubun, P.; Chomnawang, N.; Songsiriritthigul, P.

    2007-01-19

    Construction of a soft x-ray lithography beamline utilizing synchrotron radiation generated by one of the bending magnets at the Siam Photon Laboratory is finished and the beamline is currently in a commissioning period. The beamline was modified from the existing monitoring beamline and is intended for soft x-ray lithographic processing and radiation biological research. The lithography exposure station with a compact one-dimensional scanning mechanism was constructed and assembled in-house. The front-end of the beamline has been modified to allow larger exposure area. The exposure station for studying radiation effects on biological samples will be set up in tandem with the lithography station, with a Mylar window for isolation. Several improvements to both the beamline and the exposure stations, such as improved scanning speed and the ability to adjust the exposure spectrum by means of low-Z filters, are planned and will be implemented in the near future.

  19. Fabrication of moth-eye structures on silicon by direct six-beam laser interference lithography

    SciTech Connect (OSTI)

    Xu, Jia; Zhang, Ziang; Weng, Zhankun; Wang, Zuobin Wang, Dapeng

    2014-05-28

    This paper presents a new method for the generation of cross-scale laser interference patterns and the fabrication of moth-eye structures on silicon. In the method, moth-eye structures were produced on a surface of silicon wafer using direct six-beam laser interference lithography to improve the antireflection performance of the material surface. The periodic dot arrays of the moth-eye structures were formed due to the ablation of the irradiance distribution of interference patterns on the wafer surface. The shape, size, and distribution of the moth-eye structures can be adjusted by controlling the wavelength, incidence angles, and exposure doses in a direct six-beam laser interference lithography setup. The theoretical and experimental results have shown that direct six-beam laser interference lithography can provide a way to fabricate cross-scale moth-eye structures for antireflection applications.

  20. Critical dimension and pattern size enhancement using pre-strained lithography

    SciTech Connect (OSTI)

    Hong, Jian-Wei [Department of Power Mechanical Engineering, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsin Chu 30013, Taiwan (China); Yang, Chung-Yuan [Institute of NanoEngineering and MicroSystems, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsin Chu 30013, Taiwan (China); Lo, Cheng-Yao, E-mail: chengyao@mx.nthu.edu.tw [Department of Power Mechanical Engineering, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsin Chu 30013, Taiwan (China); Institute of NanoEngineering and MicroSystems, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsin Chu 30013, Taiwan (China)

    2014-10-13

    This paper proposes a non-wavelength-shortening-related critical dimension and pattern size reduction solution for the integrated circuit industry that entails generating strain on the substrate prior to lithography. Pattern size reduction of up to 49% was achieved regardless of shape, location, and size on the xy plane, and complete theoretical calculations and process steps are described in this paper. This technique can be applied to enhance pattern resolution by employing materials and process parameters already in use and, thus, to enhance the capability of outdated lithography facilities, enabling them to particularly support the manufacturing of flexible electronic devices with polymer substrates.

  1. Onsite Wastewater Treatment Systems: Ultraviolet Light Disinfection 

    E-Print Network [OSTI]

    Lesikar, Bruce J.

    2008-10-02

    Some onsite wastewater treatment systems include a disinfection component. This publication explains how homeowners can disinfect wastewater with ultraviolet light, what the components of such a system are, what factors affect the performance of a...

  2. Ultraviolet laser calibration of drift chambers

    E-Print Network [OSTI]

    Elliott, Grant (Grant Andrew)

    2006-01-01

    We demonstrate the use of a focused ultraviolet laser as a track calibration source in drift chambers, and specifically in a small time projection chamber (TPC). Drift chambers such as TPCs reconstruct the trajectories of ...

  3. Ultraviolet Behavior of N = 8 supergravity

    SciTech Connect (OSTI)

    Dixon, Lance J.

    2010-06-07

    In these lectures the author describes the remarkable ultraviolet behavior of N = 8 supergravity, which through four loops is no worse than that of N = 4 super-Yang-Mills theory (a finite theory). I also explain the computational tools that allow multi-loop amplitudes to be evaluated in this theory - the KLT relations and the unitarity method - and sketch how ultraviolet divergences are extracted from the amplitudes.

  4. Comparing Vacuum and Extreme Ultraviolet Radiation for Postionization of Laser Desorbed Neutrals from Bacterial Biofilms and Organic Fullerene

    E-Print Network [OSTI]

    Gaspera, Gerald L.

    2011-01-01

    Laboratory, USA Comparing Vacuum and Extreme Ultravioletradiation, extreme ultraviolet, vacuum ultravioletAbstract Vacuum and extreme ultraviolet radiation from 8 -

  5. Sub-5 keV electron-beam lithography in hydrogen silsesquioxane resist

    E-Print Network [OSTI]

    Manfrinato, Vitor R.

    We fabricated 9–30 nm half-pitch nested Ls and 13–15 nm half-pitch dot arrays, using 2 keV electron-beam lithography with hydrogen silsesquioxane (HSQ) as the resist. All structures with 15 nm half-pitch and above were ...

  6. Pattern transfer of electron beam modified self-assembled monolayers for high-resolution lithography

    E-Print Network [OSTI]

    Parikh, Atul N.

    Pattern transfer of electron beam modified self-assembled monolayers for high-resolution electron beam lithography. Focused electron beams from 1 to 50 keV and scanning tunneling microscopy at 10 of electron beam damage on the monolayers and the subsequent etching reactions has been explored through x

  7. Microchannel molding: A soft lithography-inspired approach to micrometer-scale patterning

    E-Print Network [OSTI]

    Aksay, Ilhan A.

    Microchannel molding: A soft lithography-inspired approach to micrometer-scale patterning large amounts of shrinkage during drying, topographical distortions develop. In place of patterning the elastomeric mold, the network of capillary channels was patterned directly into the substrate surface

  8. IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 5, NO. 1, JANUARY 2006 3 Nanopatterning With Interferometric Lithography

    E-Print Network [OSTI]

    Rocca, Jorge J.

    IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 5, NO. 1, JANUARY 2006 3 Nanopatterning the potential of compact EUV lasers in nanotechnology applications. Index Terms--Nanotechnology, photolithography, X-ray lasers, X-ray lithography. THE increasing activity in nanotechnology and nanoscience fuels

  9. INTEGRATED SIMULATION OF DISCHARGE AND LASER PRODUCED PLASMAS IN EUV LITHOGRAPHY DEVICES

    E-Print Network [OSTI]

    Harilal, S. S.

    of the plasma energy that includes thermal energy of electron and ionization energy; ie - ion component to support the throughput requirements of High-Volume Manufacturing lithography exposure tools. One method not only of power sources but also plasma irradiation parameters, plasma energy deposition, target material

  10. Low-voltage spatial-phase-locked scanning-electron-beam lithography

    E-Print Network [OSTI]

    Cheong, Lin Lee

    2010-01-01

    Spatial-phase-locked electron-beam lithography (SPLEBL) is a method that tracks and corrects the position of an electron-beam in real-time by using a reference grid placed above the electron-beam resist. In this thesis, ...

  11. Silicon nanopillar anodes for lithium-ion batteries using nanoimprint lithography with flexible molds

    E-Print Network [OSTI]

    Arnold, Craig B.

    ) The lithium ion battery, a preferred energy storage technology, is limited by its volumetric and gravimetric. INTRODUCTION The lithium ion battery has become the energy storage me- dium of choice for almost allSilicon nanopillar anodes for lithium-ion batteries using nanoimprint lithography with flexible

  12. Optimization Criteria for SRAM Design -Lithography Contribution Daniel C. Cole,b

    E-Print Network [OSTI]

    Cole, Dan C.

    Optimization Criteria for SRAM Design - Lithography Contribution Daniel C. Cole,b Orest Bula, to predict and "optimize" the printed shapes through all critical levels in a dense SRAM design. Our key emphasis here is on "optimization criteria," namely, having achieved good predictability for printability

  13. Heidelberg DWL66 Direct Write Lithography System Biomolecular Nanotechnology Center, UC Berkeley

    E-Print Network [OSTI]

    Healy, Kevin Edward

    Heidelberg DWL66 Direct Write Lithography System Biomolecular Nanotechnology Center, UC Berkeley Standard Operating Procedure Prepared By: Frankie Myers (fbm@berkeley.edu) Updated: July 30, 2010, Peter Ledochowitz) may use this machine. Qualification must include one supervised run. SAFETY WARNING

  14. Sub-10 nm imprint lithography and applications Stephen Y. Chou,a)

    E-Print Network [OSTI]

    imprint. Moreover, imprint lithography was used to fabricate the silicon quantum dot, wire, and ring to the ultrasmall force in tapping mode, both the nano-CD and the scanning probe will not show noticeable wear after-cost nanopatterning technology, particularly a nanolithography which allows complete free- dom in designing the size

  15. A novel lithography technique for formation of large areas of uniform nanostructures

    E-Print Network [OSTI]

    Shahriar, Selim

    such as plasmonics, sensors, storage devices, solar cells, nano-filtration and artificial kidneys require applications such as surface plasmonics[1] , data storage[2] , optoelectronic devices[3] , and nanoA novel lithography technique for formation of large areas of uniform nanostructures Wei Wu

  16. Room-temperature Si single-electron memory fabricated by nanoimprint lithography

    E-Print Network [OSTI]

    , Haixiong Ge, Christopher Keimel, and Stephen Y. Chou NanoStructure Laboratory, Department of Electrical using nanoimprint lithography NIL . The devices consist of a narrow channel metal­ oxide­semiconductor field-effect transistor and a sub-10-nm storage dot, which is located between the channel and the gate

  17. Methane Digesters and Biogas Recovery - Masking the Environmental Consequences of Industrial Concentrated Livestock Production

    E-Print Network [OSTI]

    Di Camillo, Nicole G.

    2011-01-01

    Methane Digesters and Biogas Recovery-Masking theII. METHANE DIGESTERS AND BIOGAs RECOVERY- IN THE2011] METHANE DIGESTERS AND BIOGAS RECOVERY methane, and 64%

  18. Methane Digesters and Biogas Recovery - Masking the Environmental Consequences of Industrial Concentrated Livestock Production

    E-Print Network [OSTI]

    Di Camillo, Nicole G.

    2011-01-01

    Methane Digesters and Biogas Recovery-Masking theII. METHANE DIGESTERS AND BIOGAs RECOVERY- IN THEEVEN BEYOND MANURE-ASSOCIATED METHANE EMISSIONS, INDUSTRIAL

  19. Analysis of Optics and Mask Contamination in SEMATECH EUV Micro-Exposure Tools

    E-Print Network [OSTI]

    Wuest, Andrea

    2008-01-01

    of Optics and Mask Contamination in SEMATECH EUV MioroTools IEUVI Optics Contamination/Lifetime TWG Sapporo,of spot inside visible contamination. sputter time (min) c

  20. A masking analysis of glass pattern perception Department of Psychology, National Taiwan University,

    E-Print Network [OSTI]

    Chen, Chein Chung

    A masking analysis of glass pattern perception Department of Psychology, National Taiwan University, Taipei, Taiwan, & Neurobiology and Cognitive Science Center, National Taiwan University, Taipei, Taiwan

  1. Vacuum-ultraviolet (VUV) photoionization of small methanol and methanol-water clusters

    E-Print Network [OSTI]

    Ahmed, Musahid

    2008-01-01

    Physical Chemistry Vacuum-ultraviolet (VUV) photoionizationPhysical Chemistry Vacuum-ultraviolet (VUV) photoionizationwe report on the vacuum-ultraviolet (VUV) photoionization of

  2. Vacuum-Ultraviolet (VUV) Photoionization of Small Methanol and Methanol-Water Clusters

    E-Print Network [OSTI]

    Kostko, Oleg

    2008-01-01

    Vacuum-ultraviolet (VUV) photoionization of small methanolwe report on the vacuum-ultraviolet (VUV) photoionization ofionization with tunable vacuum- ultraviolet synchrotron

  3. Design and analysis of a scanning beam interference lithography system for patterning gratings with nanometer-level distortions

    E-Print Network [OSTI]

    Konkola, Paul Thomas, 1973-

    2003-01-01

    This thesis describes the design and analysis of a system for patterning large-area gratings with nanometer level phase distortions. The novel patterning method, termed scanning beam interference lithography (SBIL), uses ...

  4. Sub-10-nm half-pitch electron-beam lithography by using poly(methyl methacrylate) as a negative resist

    E-Print Network [OSTI]

    Berggren, Karl K.

    Developing high-resolution resists and processes for electron-beam lithography is of great importance for high-density magnetic storage, integrated circuits, and nanoelectronic and nanophotonic devices. Until now, hydrogen ...

  5. Graphene Edge Lithography Guibai Xie, Zhiwen Shi, Rong Yang, Donghua Liu, Wei Yang, Meng Cheng, Duoming Wang, Dongxia Shi,

    E-Print Network [OSTI]

    Zhang, Guangyu

    Graphene Edge Lithography Guibai Xie, Zhiwen Shi, Rong Yang, Donghua Liu, Wei Yang, Meng Cheng: Fabrication of graphene nanostructures is of importance for both investigating their intrinsic physical approach for graphene nanostructures. Compared with conventional lithographic fabrication techniques

  6. Inference for the dependent competing risks model with masked causes of failure

    E-Print Network [OSTI]

    Craiu, V. Radu

    Inference for the dependent competing risks model with masked causes of failure Radu V. Craiu Æ/fail for different reasons. The cause specific hazard rates are taken to be piecewise constant functions. A complication arises when some of the failures are masked within a group of possible causes. Traditionally

  7. Inference based on the em algorithm for the competing risk model with masked causes of failure

    E-Print Network [OSTI]

    Duchesne, Thierry

    Inference based on the em algorithm for the competing risk model with masked causes of failure parameterised competing risks model with masked causes of failure and second-stage data. With a carefully chosen definition of complete data, the maximum likelihood estimation of the cause-specific hazard functions

  8. An Efficient Shift Invariant Rasterization Algorithm for All-Angle Mask Patterns in ILT

    E-Print Network [OSTI]

    Chu, Chris C.-N.

    rasterize the ILT masks before they are inputted to the simulation tools. Currently, there is no high project- ing COG (Chrome on Glass) circuit masks onto coated silicon Permission to make digital or hard dis- torts the shapes on reticle, as the imaging process cuts off all the high-frequency content

  9. Ultraviolet-light-induced transformation of human primary cells

    SciTech Connect (OSTI)

    Sutherland, B.M.

    1981-01-01

    The development of model systems for probing the ultraviolet radiation induced oncogenic transformation of human skin cells is described. (ACR)

  10. Ultraviolet emissions from Gd3 + ions excited by energy transfer

    E-Print Network [OSTI]

    Cao, Wenwu

    Ultraviolet emissions from Gd3 + ions excited by energy transfer from Ho3 + ions Ying Yu October 2010 Accepted 28 October 2010 Available online 4 November 2010 Keywords: Ultraviolet emission Upconversion Energy transfer a b s t r a c t Ultraviolet (UV) upconversion (UC) emissions of Gd3+ ion were

  11. Microwave-driven ultraviolet light sources

    DOE Patents [OSTI]

    Manos, Dennis M. (Williamsburg, VA); Diggs, Jessie (Norfolk, VA); Ametepe, Joseph D. (Roanoke, VA)

    2002-01-29

    A microwave-driven ultraviolet (UV) light source is provided. The light source comprises an over-moded microwave cavity having at least one discharge bulb disposed within the microwave cavity. At least one magnetron probe is coupled directly to the microwave cavity.

  12. ATOMIC FORCE LITHOGRAPHY OF NANO/MICROFLUIDIC CHANNELS FOR VERIFICATION AND MONITORING OF AQUEOUS SOLUTIONS

    SciTech Connect (OSTI)

    Mendez-Torres, A.; Torres, R.; Lam, P.

    2011-07-15

    The growing interest in the physics of fluidic flow in nanoscale channels, as well as the possibility for high sensitive detection of ions and single molecules is driving the development of nanofluidic channels. The enrichment of charged analytes due to electric field-controlled flow and surface charge/dipole interactions along the channel can lead to enhancement of sensitivity and limits-of-detection in sensor instruments. Nuclear material processing, waste remediation, and nuclear non-proliferation applications can greatly benefit from this capability. Atomic force microscopy (AFM) provides a low-cost alternative for the machining of disposable nanochannels. The small AFM tip diameter (< 10 nm) can provide for features at scales restricted in conventional optical and electron-beam lithography. This work presents preliminary results on the fabrication of nano/microfluidic channels on polymer films deposited on quartz substrates by AFM lithography.

  13. ATOMIC FORCE LITHOGRAPHY OF NANO MICROFLUIDIC CHANNELS FOR VERIFICATION AND MONITORING IN AQUEOUS SOLUTIONS

    SciTech Connect (OSTI)

    Torres, R.; Mendez-Torres, A.; Lam, P.

    2011-06-09

    The growing interest in the physics of fluidic flow in nanoscale channels, as well as the possibility for high sensitive detection of ions and single molecules is driving the development of nanofluidic channels. The enrichment of charged analytes due to electric field-controlled flow and surface charge/dipole interactions along the channel can lead to enhancement of sensitivity and limits-of-detection in sensor instruments. Nuclear material processing, waste remediation, and nuclear non-proliferation applications can greatly benefit from this capability. Atomic force microscopy (AFM) provides a low-cost alternative for the machining of disposable nanochannels. The small AFM tip diameter (< 10 nm) can provide for features at scales restricted in conventional optical and electron-beam lithography. This work presents preliminary results on the fabrication of nano/microfluidic channels on polymer films deposited on quartz substrates by AFM lithography.

  14. Mask effects on cosmological studies with weak-lensing peak statistics

    SciTech Connect (OSTI)

    Liu, Xiangkun; Pan, Chuzhong; Fan, Zuhui; Wang, Qiao

    2014-03-20

    With numerical simulations, we analyze in detail how the bad data removal, i.e., the mask effect, can influence the peak statistics of the weak-lensing convergence field reconstructed from the shear measurement of background galaxies. It is found that high peak fractions are systematically enhanced because of the presence of masks; the larger the masked area is, the higher the enhancement is. In the case where the total masked area is about 13% of the survey area, the fraction of peaks with signal-to-noise ratio ? ? 3 is ?11% of the total number of peaks, compared with ?7% of the mask-free case in our considered cosmological model. This can have significant effects on cosmological studies with weak-lensing convergence peak statistics, inducing a large bias in the parameter constraints if the effects are not taken into account properly. Even for a survey area of 9 deg{sup 2}, the bias in (? {sub m}, ?{sub 8}) is already intolerably large and close to 3?. It is noted that most of the affected peaks are close to the masked regions. Therefore, excluding peaks in those regions in the peak statistics can reduce the bias effect but at the expense of losing usable survey areas. Further investigations find that the enhancement of the number of high peaks around the masked regions can be largely attributed to the smaller number of galaxies usable in the weak-lensing convergence reconstruction, leading to higher noise than that of the areas away from the masks. We thus develop a model in which we exclude only those very large masks with radius larger than 3' but keep all the other masked regions in peak counting statistics. For the remaining part, we treat the areas close to and away from the masked regions separately with different noise levels. It is shown that this two-noise-level model can account for the mask effect on peak statistics very well, and the bias in cosmological parameters is significantly reduced if this model is applied in the parameter fitting.

  15. Data Collection for the MASK Kiosk: WOz vs Prototype System A. Life, I. Saltery

    E-Print Network [OSTI]

    Data Collection for the MASK Kiosk: WOz vs Prototype System A. Life, I. Saltery Ergonomics Unit state-of-the-art speech technology. In this paperwe report on our efforts aimed at evaluating

  16. Ice-assisted electron beam lithography of graphene This article has been downloaded from IOPscience. Please scroll down to see the full text article.

    E-Print Network [OSTI]

    Ice-assisted electron beam lithography of graphene This article has been downloaded from IOPscience-assisted electron beam lithography of graphene Jules A Gardener1 and J A Golovchenko1,2 1 Department of Physics demonstrate that a low energy focused electron beam can locally pattern graphene coated with a thin ice layer

  17. Integrated circuit mask generation using a raster scanned laser trimming system 

    E-Print Network [OSTI]

    Gourley, Kevin Dwayne

    1982-01-01

    and developed . for the production of integrated circuit master reticles. The novelty of this approach is the use of a commercial Nd:YAG laser trimming system as a raster scanning laser reticle generator. A previous method employing an ESI Model 44 Laser... Integrated Circuit Mask Making), supports designs of even very large scale integration (VLSI) complexities. Low cost and high versatility makes the use of a commercial laser trimmer as a mask gener ation system very attractive for research applications...

  18. Decomposition of catechol and carbonaceous residues on TiO2,,110...: A model system for cleaning of extreme ultraviolet lithography optics

    E-Print Network [OSTI]

    Diebold, Ulrike

    oxidize and/or become contaminated with residual carbon, which significantly low- ers the mirror electron yield and rapid contamination of the reflective optics. In prototype mir- ror systems, the deposits are predominantly composed of car- bon and hydrogen with oxygen as a minority species.2,3 Capping

  19. Facile electron-beam lithography technique for irregular and fragile substrates

    SciTech Connect (OSTI)

    Chang, Jiyoung; Zhou, Qin; Zettl, Alex, E-mail: azettl@berkeley.edu [Department of Physics, University of California at Berkeley, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kavli Energy NanoSciences Institute at the University of California, Berkeley, California 94720 (United States)

    2014-10-27

    A facile technique is presented which enables high-resolution electron beam lithography on irregularly-shaped, non-planar or fragile substrates such as the edges of a silicon chip, thin and narrow suspended beams and bridges, or small cylindrical wires. The method involves a spin-free dry-transfer of pre-formed uniform-thickness polymethyl methacrylate, followed by conventional electron beam writing, metal deposition, and lift-off. High-resolution patterning is demonstrated for challenging target substrates. The technique should find broad application in micro- and nano-technology research arenas.

  20. A reflective optical transport system for ultraviolet Thomson...

    Office of Scientific and Technical Information (OSTI)

    A reflective optical transport system for ultraviolet Thomson scattering from electron plasma waves on OMEGA Citation Details In-Document Search Title: A reflective optical...

  1. Vacuum-ultraviolet photoreduction of graphene oxide: Electrical...

    Office of Scientific and Technical Information (OSTI)

    Vacuum-ultraviolet photoreduction of graphene oxide: Electrical conductivity of entirely reduced single sheets and reduced micro line patterns Citation Details In-Document Search...

  2. Lyalpha EMITTERS IN HIERARCHICAL GALAXY FORMATION. II. ULTRAVIOLET...

    Office of Scientific and Technical Information (OSTI)

    Lyalpha EMITTERS IN HIERARCHICAL GALAXY FORMATION. II. ULTRAVIOLET CONTINUUM LUMINOSITY FUNCTION AND EQUIVALENT WIDTH DISTRIBUTION Citation Details In-Document Search Title:...

  3. Ultra-lightweight nanorelief networks : photopatterned microframes

    E-Print Network [OSTI]

    Choi, Taeyi

    2007-01-01

    Lightweight nano-network structures in polymers have been fabricated and investigated for their mechanical properties. Fabrication techniques via holographic interference lithography and phase mask lithography were implemented ...

  4. The SEMATECH Berkeley MET & DCT: a quest for 14-nm half-pitch in chemically amplified resist, OOB contrast of EUV resists, and 6.x-nm lithography

    E-Print Network [OSTI]

    McClinton, Brittany

    2013-01-01

    phase-shift-mask (pseudo-PSM) imaging, providing earlypitch, using the pseudo-PSM technique. In September 2011,

  5. Soft holographic interference lithography microlens for enhanced organic light emitting diode light extraction

    SciTech Connect (OSTI)

    Park, Joong-Mok; Gan, Zhengqing; Leung, Wai Y.; Liu, Rui; Ye, Zhuo; Constant, Kristen; Shinar, Joseph; Shinar, Ruth; Ho, Kai-Ming

    2011-06-06

    Very uniform 2 {micro}m-pitch square microlens arrays ({micro}LAs), embossed on the blank glass side of an indium-tin-oxide (ITO)-coated 1.1 mm-thick glass, are used to enhance light extraction from organic light-emitting diodes (OLEDs) by {approx}100%, significantly higher than enhancements reported previously. The array design and size relative to the OLED pixel size appear to be responsible for this enhancement. The arrays are fabricated by very economical soft lithography imprinting of a polydimethylsiloxane (PDMS) mold (itself obtained from a Ni master stamp that is generated from holographic interference lithography of a photoresist) on a UV-curable polyurethane drop placed on the glass. Green and blue OLEDs are then fabricated on the ITO to complete the device. When the {mu}LA is {approx}15 x 15 mm{sup 2}, i.e., much larger than the {approx}3 x 3 mm{sup 2} OLED pixel, the electroluminescence (EL) in the forward direction is enhanced by {approx}100%. Similarly, a 19 x 25 mm{sup 2} {mu}LA enhances the EL extracted from a 3 x 3 array of 2 x 2 mm{sup 2} OLED pixels by 96%. Simulations that include the effects of absorption in the organic and ITO layers are in accordance with the experimental results and indicate that a thinner 0.7 mm thick glass would yield a {approx}140% enhancement.

  6. Vacuum ultraviolet mass-analyzed threshold ionization spectroscopy of methylcyclohexane in the supersonic jet

    E-Print Network [OSTI]

    Kim, Sang Kyu

    Vacuum ultraviolet mass-analyzed threshold ionization spectroscopy of methylcyclohexane t Vacuum ultraviolet (VUV) mass-analyzed threshold ionization (MATI) spectrum of supersonically cooled the vacuum ultraviolet (VUV) laser source is particu- larly useful for molecular systems with no stable

  7. THORIUM-BASED MIRRORS IN THE EXTREME ULTRAVIOLET Nicole Farnsworth

    E-Print Network [OSTI]

    Hart, Gus

    THORIUM-BASED MIRRORS IN THE EXTREME ULTRAVIOLET by Nicole Farnsworth Submitted to Brigham Young Ultraviolet and Thorium-based Mirrors . . . 1 1.2 Project Background the Optical Constants of Thorium Oxide 34 3.1 Reflectance and Transmittance Measurements

  8. 3D microfabrication of single-wall carbon nanotube/polymer composites by two-photon polymerization lithography

    E-Print Network [OSTI]

    Natelson, Douglas

    3D microfabrication of single-wall carbon nanotube/polymer composites by two-photon polymerization online 16 March 2013 A B S T R A C T We present a method to develop single-wall carbon nanotube (SWCNT)/polymer-photon polymerization lithography, allows one to fabricate three-dimensional SWCNT/polymer composites with a minimum

  9. Polymer sphere lithography for solid oxide fuel cells: a route to functional, well-defined electrode structures

    E-Print Network [OSTI]

    Polymer sphere lithography for solid oxide fuel cells: a route to functional, well. Introduction Dramatic breakthroughs in the materials, particularly electrode materials, for solid oxide fuel cells (SOFCs) have been reported in recent years.1­3 Fundamental understanding of the electro- catalytic

  10. Feature filling modeling for step and flash imprint lithography Siddharth Chauhan, Frank Palmieri, Roger T. Bonnecaze,a

    E-Print Network [OSTI]

    : 10.1116/1.3147212 I. INTRODUCTION Step and flash imprint lithography SFIL is a low pres- sure molding technology of integrated circuits ICs , including high throughput and low defects, necessitate nearly perfect defect-free imprinting in SFIL. Complete filling of features during the imprint step is imperative

  11. Contact lens wear with the USAF protective integrated hood/mask chemical defense ensemble

    SciTech Connect (OSTI)

    Dennis, R.J.; Miller, R.E. II; Peterson, R.D.; Jackson, W.G. Jr. (USAF, Armstrong Laboratory, Brooks AFB, TX (United States))

    1992-07-01

    The Protective Integrated Hood/Mask (PIHM) chemical defense aircrew ensemble blows air from the mask's plenum across the visor at a rate of approximately 15 L/min in order to prevent fogging of the visor and to cool the aircrew member's face. This study was designed to determine the effect of the PIHM airflow on soft contact lens (SCL) dehydration, contact lens comfort, and corneal integrity. There were 26 subjects who participated in this study: 15 SCL wearers, six rigid gas-permeable (RGP) wearers, and five nonspectacle wearing controls. Contrast acuity with the three Regan charts, subjective comfort, and relative humidity (RH) and temperature readings under the PIHM mask were monitored every 0.5 h during 6-h laboratory rides. Slit-lamp examinations and SCL water content measurements with a hand-held Abbe refractometer were made before and after the rides. High RH under the mask may have accounted for the moderate SCL dehydration (8.3 percent), no decrease in contrast acuity for any group, and lack of corneal stress. Although all groups experienced some inferior, epithelial, punctate keratopathy, RGP wearers had the most significant effects. SCLs performed relatively well in the PIHM mask environment. Testing with other parameter designs is necessary before recommending RGPs with the PIHM system. 19 refs.

  12. Ultraviolet laser beam monitor using radiation responsive crystals

    DOE Patents [OSTI]

    McCann, Michael P. (Oliver Springs, TN); Chen, Chung H. (Knoxville, TN)

    1988-01-01

    An apparatus and method for monitoring an ultraviolet laser beam includes disposing in the path of an ultraviolet laser beam a substantially transparent crystal that will produce a color pattern in response to ultraviolet radiation. The crystal is exposed to the ultraviolet laser beam and a color pattern is produced within the crystal corresponding to the laser beam intensity distribution therein. The crystal is then exposed to visible light, and the color pattern is observed by means of the visible light to determine the characteristics of the laser beam that passed through crystal. In this manner, a perpendicular cross sectional intensity profile and a longitudinal intensity profile of the ultraviolet laser beam may be determined. The observation of the color pattern may be made with forward or back scattered light and may be made with the naked eye or with optical systems such as microscopes and television cameras.

  13. Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices

    DOE Patents [OSTI]

    Morse, Jeffrey D. (Martinez, CA); Contolini, Robert J. (Lake Oswego, OR)

    2001-01-01

    A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.

  14. Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO[subscript 2] Resists

    E-Print Network [OSTI]

    Mendoza, Hiroshi A.

    To address the incompatibility of organic semiconductors with traditional photolithography, an inert, frozen CO[subscript 2] resist is demonstrated that forms an in situ shadow mask. Contact with a room-temperature ...

  15. Progress in the fabrication of high aspect ratio zone plates by soft x-ray lithography.

    SciTech Connect (OSTI)

    Divan, R.; Mancini, D. C.; Moldovan, N. A.; Lai, B.; Assoufid, L.; Leondard, Q.; Cerrina, F.

    2002-08-13

    Soft x-ray lithography technology has been applied to fabrication of phase shifting Fresnel Zone Plate (FZP's) for hard x-rays. Effects of the exposure conditions, developing system, and electroplating process parameters on line width and aspect ratio have been analyzed. The process has been optimized and an aspect ratio of 11 has been achieved for 110 nm outermost zone width. SEM and AFM have been used for preliminary metrology of the FZPs. The FZP optical performance was characterized at 8 keV photon energy at the 2-ID-D beam line at the Advanced Photon Source. Focusing efficiencies of 23% for FZPs apertures to 100 microns and 18% for 150-micron-diameter apertures have been obtained. The parameters of the fabricated FZP are in good agreement with the predicted values.

  16. Study of nano imprinting using soft lithography on Krafty glue and PVDF polymer thin films

    SciTech Connect (OSTI)

    Sankar, M. S. Ravi, E-mail: rameshg.phy@pondiuni.edu; Gangineni, Ramesh Babu, E-mail: rameshg.phy@pondiuni.edu [Department of Physics, Pondicherry University, R. V. Nagar, Kalapet, Puducherry - 605014 (India)

    2014-04-24

    The present work reveals soft lithography strategy based on self assembly and replica molding for carrying out micro and nanofabrication. It provides a convenient, effective and very low cost method for the formation and manufacturing of micro and nano structures. Al-layer of compact disc (sony CD-R) used as a stamp with patterned relief structures to generate patterns and structures with pattern size of 100nm height, 1.7 ?m wide. In literature, PDMS (Polydimethylsiloxane) solution is widely used to get negative copy of the Al-layer. In this work, we have used inexpensive white glue (Polyvinylacetate + water), 15gm (?5) and PVDF (Polyvinylidene difluoride) spin coated films and successfully transferred the nano patterns of Al layer on to white glue and PVDF films.

  17. A HIGH ASPECT RATIO, FLEXIBLE, TRANSPARENT AND LOW-COST PARYLENE-C SHADOW MASK TECHNOLOGY FOR MICROPATTERNING APPLICATIONS

    E-Print Network [OSTI]

    Dokmeci, Mehmet

    A HIGH ASPECT RATIO, FLEXIBLE, TRANSPARENT AND LOW-COST PARYLENE-C SHADOW MASK TECHNOLOGY and Technology, MIT, Cambridge, MA, USA Abstract: In this paper, we present a flexible parylene-C shadow mask technology for creating microscale patterns on flat and curved surfaces. The smallest feature size of 4 µm

  18. USER EVALUATION OF THE MASK KIOSK L. Lamel, S. Bennacef, J.L. Gauvain, H. Dartiguesy, J.N. Tememy

    E-Print Network [OSTI]

    USER EVALUATION OF THE MASK KIOSK L. Lamel, S. Bennacef, J.L. Gauvain, H. Dartiguesy, J.N. Tememy) and the Ergonomics group at UCL. The time to complete the transaction with the MASK kiosk is reduced by about 30-CNRS, the SNCF (the French Railways) and the Ergonomics group at UCL (Univeristy College London). The physical

  19. Reflective optical imaging method and circuit

    DOE Patents [OSTI]

    Shafer, David R. (Fairfield, CT)

    2001-01-01

    An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four reflective elements for projecting a mask image onto a substrate. The four optical elements are characterized in order from object to image as convex, concave, convex and concave mirrors. The optical system is particularly suited for step and scan lithography methods. The invention increases the slit dimensions associated with ringfield scanning optics, improves wafer throughput and allows higher semiconductor device density.

  20. Reflective optical imaging system

    DOE Patents [OSTI]

    Shafer, David R. (Fairfield, CT)

    2000-01-01

    An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four reflective elements for projecting a mask image onto a substrate. The four optical elements are characterized in order from object to image as convex, concave, convex and concave mirrors. The optical system is particularly suited for step and scan lithography methods. The invention increases the slit dimensions associated with ringfield scanning optics, improves wafer throughput and allows higher semiconductor device density.

  1. A direct-write thick-film lithography process for multi-parameter control of tooling in continuous roll-to-roll microcontact printing

    E-Print Network [OSTI]

    Nietner, Larissa F

    2014-01-01

    Roll-to-roll (R2R) microcontact printing ([mu]CP) aims to transform micron-precision soft lithography in a continuous, large-scale, high-throughput process for large-area surface patterning, flexible electronics and ...

  2. Laser Makes New Shade of Ultraviolet (COSMIC Log on MSNBC.com...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    cosmiclog.nbcnews.comnews201012285725603-laser-makes-new-shade-of-ultraviolet Submitted: Wednesday, December 29...

  3. The application of nanosecond-pulsed laser welding technology in MEMS packaging with a shadow mask$

    E-Print Network [OSTI]

    Lin, Liwei

    The application of nanosecond-pulsed laser welding technology in MEMS packaging with a shadow mask wiring is not pre- ferred. A comprehensive review on laser welding was given in [6]. The laser welding of laser welding is to create the liquid pool by absorption of incident radiation, allow it to grow

  4. New MS-Windows-Based Educational Software for Teaching the Sunpath Diagram and Shading Mask Protractor 

    E-Print Network [OSTI]

    Oh, J. K. W.; Haberl, J. S.

    1996-01-01

    software package that includes a tutorial on how the sunpath and shading mask protrotractor are constructed. protractor which represents the hemispherical view that one could obtained if a photo could be taken with a fisheye-lens camera that is facing...

  5. Computer-aided engineering system for design of sequence arrays and lithographic masks

    DOE Patents [OSTI]

    Hubbell, Earl A. (Mt. View, CA); Lipshutz, Robert J. (Palo Alto, CA); Morris, Macdonald S. (San Jose, CA); Winkler, James L. (Palo Alto, CA)

    1997-01-01

    An improved set of computer tools for forming arrays. According to one aspect of the invention, a computer system is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files to design and/or generate lithographic masks.

  6. Evaluation of MODIS snow cover and cloud mask and its application in Northern Xinjiang, China

    E-Print Network [OSTI]

    Texas at San Antonio, University of

    Evaluation of MODIS snow cover and cloud mask and its application in Northern Xinjiang, China in revised form 14 May 2007; accepted 26 May 2007 Abstract Using five-year (2001­2005) ground-observed snow the accuracy of the 8-day snow cover product (MOD10A2) from the Moderate Resolution Imaging Spectroradiometer

  7. Informational masking for simultaneous nonspeech stimuli: Psychometric functions for fixed and randomly mixed maskers

    E-Print Network [OSTI]

    Shinn-Cunningham, Barbara

    be reasonably well fit by simple energy-detector models in which internal noise and filter bandwidth are used of new data and its relation to energy-detector models, this paper provides comments on a variety target is being masked by a simultaneously presented multitone com- plex e.g., Neff and Green, 1987; Neff

  8. Analysis of a Mask-Based Nanowire Decoder Eric Rachlin, John E. Savage and Benjamin Gojman

    E-Print Network [OSTI]

    Savage, John

    a moderate number of mesoscale wires. Three methods have been proposed to use mesoscale wires to control random doped connections between nanowires and mesoscale wires, and the third, a mask-based approach, in- terposes high-K dielectric regions between nanowires and mesoscale wires. All three addressing schemes

  9. Thermal behavior of TAXN and TCDXM D2 collimator mask, Finite element studies

    E-Print Network [OSTI]

    Sklariks, Stepans

    2015-01-01

    The objective of this project was to perform thermal loading simulations of TCDXM (D2 collimator mask) and TAXN so as to allow the preliminary evaluation of the suitability of the given parts for the upcoming high luminosity upgrade that is to be performed in LHC in the nearest future.

  10. Title of Document: DEVELOPMENT OF AN ADAPTIVE MASKING METHOD TO IMAGE BEAM

    E-Print Network [OSTI]

    Anlage, Steven

    . Light produced by the beam intercepting a phosphor screen is first imaged onto the array; an adaptiveABSTRACT Title of Document: DEVELOPMENT OF AN ADAPTIVE MASKING METHOD TO IMAGE BEAM HALO Hao Zhang performed to study beam halo at the University of Maryland Electron Ring. #12;DEVELOPMENT OF AN ADAPTIVE

  11. Model Selection for the Competing-Risks Model With and Without Masking

    E-Print Network [OSTI]

    Lee, Thomas

    Department of Statistics Colorado State University Fort Collins, CO 80523-1877 (tlee@stat.colostate.edu) The competing-risks model is useful in settings in which individuals (or units) may die (or fail) because for competing-risks data with and without masking involves the specification of cause-specific hazard rates

  12. Automatic Selection of Mask and Arterial Phase Images for Temporally Resolved MR Digital

    E-Print Network [OSTI]

    Zabih, Ramin

    Automatic Selection of Mask and Arterial Phase Images for Temporally Resolved MR Digital Subtraction Angiography Junhwan Kim,1* Martin R. Prince,2 Ramin Zabih,1,2 Jeff Bezanson,2 Richard Watts,2 Hale angiography (CEMRA) has become a routine clinical tool for pretreat- ment mapping of vasculature (1). Among

  13. Coherent light scattering of ultraviolet light by avian feather barbs

    E-Print Network [OSTI]

    Prum, Richard O.; Andersson, Staffan; Torres, Rodolfo H.

    2003-04-05

    Ultraviolet (UV) structural colors of avian feathers are produced by the spongy medullary keratin of feather barbs, but various physical mechanisms have been hypothesized to produce those colors, including Rayleigh scattering, Mie scattering...

  14. Reduction of turkey hatching egg shell contamination with ultraviolet irradiation 

    E-Print Network [OSTI]

    Russo, Rebecca Ann

    2001-01-01

    The effects of ultraviolet light (UV) at 254 nm on indigenous eggshell surface aerobic bacteria, Salmonella, Escherichia coli, gram positive bacteria as well as inoculated Salmonella typhimurium chicken and E. coli O157:H7 were evaluated. Various...

  15. Subcutaneous and cutaneous melanins in Rhabdomys: complementary ultraviolet radiation shields

    E-Print Network [OSTI]

    Timm, Robert M.; Kermott, L. Henry

    1982-02-01

    We describe the pigmented tissue layer covering the skull of Rhabdomys pumilio and test the hypotheses that it is melanin and that it functions in absorption of ultraviolet solar radiation. The parietals were covered by a dark tissue layer...

  16. Can we stop the spread of influenza in schools with face masks?

    SciTech Connect (OSTI)

    Del Valle, Sara Y; Tellier, Raymond; Settles, Gary; Tang, Julian

    2009-01-01

    In the absence of a strain-specific vaccine and the potential resistance to antiviral medication, nonpharmaceutical interventions can be used to reduce the spread of an infectious disease such as influenza. The most common non-pharmaceutical interventions include school closures, travel restrictions, social distancing, enforced or volunteer home isolation and quarantine, improved hand hygiene, and the appropriate wearing of face masks. However, for some of these interventions, there are some unavoidable economic costs to both employees and employers, as well as possible additional detriment to society as a whole. For example, it has been shown that school-age children are most likely to be infected and act as sources of infection for others, due to their greater societal interaction and increased susceptibility. Therefore, preventing or at least reducing infections in children is a logical first-line of defense. For this reason, school closures have been widely investigated and recommended as part of pandemic influenza preparedness, and some studies support this conclusion. Yet, school closures would result in lost work days if at least one parent must be absent from work to care for children who would otherwise be at school. In addition, the delay in-academic progress may be detrimental due to mass school absenteeism. In particular, the pandemic influenza guidance by the U.S. Department of Health and Human Services recommends school closures for less than four weeks for Category 2 and 3 pandemics (i.e., similar to the milder 1957 and 1968 pandemics) and one to three months for Category 4 and 5 pandemics (i .e., similar to the 1918 pandemic ). Yet, given the above, it is clear that closing schools for up to three months is unlikely to be a practical mitigation strategy for many families and society. Thus modelers and policy makers need to weigh all factors before recommending such drastic measures, particularly if the agent under consideration typically has low mortality and causes a mild disease. Therefore, we contend that face masks are an effective, practical, non-pharmaceutical intervention that would reduce the spread of disease among school-children, while keeping schools open. Influenza spreads through person-to-person contact, via transmission by large droplets or aerosols (droplet nuclei) produced by breathing, talking, coughing or sneezing, as well as by direct (though most people touch very few others in their daily lives) or indirect (i.e., via fomites) contact. Face masks act as a physical barrier to reduce the amount of potentially infectious inhaled and exhaled particles, although they would not reliably protect the wearer against aerosols; a recent study also demonstrated that they can redirect and decelerate exhaled airflows (when worn by an infected individual) to prevent them from entering the breathing zones of others. Thus, if a whole classroom were to don face masks, disease transmission would be expected to be greatly diminished. Another recent study on face masks and hand hygiene show a 10-50% transmission reduction for influenza-like illnesses. Furthermore, face masks can act as an effective physical reminder and barrier to transmission by preventing the wearer from touching any potentially infectious secretions from their mucous membranes (i.e., from the nose and mouth), which is another mechanism for direct and indirect contact transmission for influenza. A recent systematic review has suggested that wearing masks can be highly effective in limiting the transmission of respiratory infections, such as influenza. Yet, admittedly, the effectiveness of this intervention strategy is highly dependent on compliance (i.e., the willingness to wear the mask in all appropriate situations), which in tum depends on comfort, convenience, fitness, and hygiene. Importantly, masks themselves must not become a source of infection (or reinfection); as such they should be replaced or sanitized daily (where possible) to maximize effectiveness. One solution could be for masks to be touted as fashion accessories, whi

  17. Vacuum ultraviolet photoionization of carbohydrates and nucleotides

    SciTech Connect (OSTI)

    Shin, Joong-Won, E-mail: jshin@govst.edu [Division of Science, Governors State University, University Park, Illinois 60484-0975 (United States) [Division of Science, Governors State University, University Park, Illinois 60484-0975 (United States); Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523-1872 (United States); Bernstein, Elliot R., E-mail: erb@lamar.colostate.edu [Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523-1872 (United States)

    2014-01-28

    Carbohydrates (2-deoxyribose, ribose, and xylose) and nucleotides (adenosine-, cytidine-, guanosine-, and uridine-5{sup ?}-monophosphate) are generated in the gas phase, and ionized with vacuum ultraviolet photons (VUV, 118.2 nm). The observed time of flight mass spectra of the carbohydrate fragmentation are similar to those observed [J.-W. Shin, F. Dong, M. Grisham, J. J. Rocca, and E. R. Bernstein, Chem. Phys. Lett. 506, 161 (2011)] for 46.9 nm photon ionization, but with more intensity in higher mass fragment ions. The tendency of carbohydrate ions to fragment extensively following ionization seemingly suggests that nucleic acids might undergo radiation damage as a result of carbohydrate, rather than nucleobase fragmentation. VUV photoionization of nucleotides (monophosphate-carbohydrate-nucleobase), however, shows that the carbohydrate-nucleobase bond is the primary fragmentation site for these species. Density functional theory (DFT) calculations indicate that the removed carbohydrate electrons by the 118.2 nm photons are associated with endocyclic C–C and C–O ring centered orbitals: loss of electron density in the ring bonds of the nascent ion can thus account for the observed fragmentation patterns following carbohydrate ionization. DFT calculations also indicate that electrons removed from nucleotides under these same conditions are associated with orbitals involved with the nucleobase-saccharide linkage electron density. The calculations give a general mechanism and explanation of the experimental results.

  18. Intense ultraviolet perturbations on aquatic primary producers

    E-Print Network [OSTI]

    Guimarais, Mayrene; Horvath, Jorge

    2010-01-01

    During the last decade, the hypothesis that one or more biodiversity drops in the Phanerozoic eon, evident in the geological record, might have been caused by the most powerful kind of stellar explosion so far known (Gamma Ray Bursts) has been discussed in several works. These stellar explosions could have left an imprint in the biological evolution on Earth and in other habitable planets. In this work we calculate the short-term lethality that a GRB would produce in the aquatic primary producers on Earth. This effect on life appears as a result of ultraviolet (UV) re-transmission in the atmosphere of a fraction of the gamma energy, resulting in an intense UV flash capable of penetrating ~ tens of meters in the water column in the ocean. We focus on the action of the UV flash on phytoplankton, as they are the main contributors to global aquatic primary productivity. Our results suggest that the UV flash could cause an hemispheric reduction of phytoplankton biomass in the upper mixed layer of the World Ocean o...

  19. System and methods for determining masking signals for applying empirical mode decomposition (EMD) and for demodulating intrinsic mode functions obtained from application of EMD

    DOE Patents [OSTI]

    Senroy, Nilanjan (New Delhi, IN); Suryanarayanan, Siddharth (Littleton, CO)

    2011-03-15

    A computer-implemented method of signal processing is provided. The method includes generating one or more masking signals based upon a computed Fourier transform of a received signal. The method further includes determining one or more intrinsic mode functions (IMFs) of the received signal by performing a masking-signal-based empirical mode decomposition (EMD) using the at least one masking signal.

  20. Near ultraviolet-wavelength photonic-crystal biosensor with enhanced surface-to-bulk sensitivity ratio

    E-Print Network [OSTI]

    Cunningham, Brian

    in a Si/SiO2/poly methyl- methacrylate substrate by electron-beam lithography and etched into the discovery,1 environmental detection, medical diagnostics, and life science research.2 Traditional labeled

  1. HST-COS observations of AGNs. II. Extended survey of ultraviolet composite spectra from 159 active galactic nuclei

    SciTech Connect (OSTI)

    Stevans, Matthew L. [Present address: Astronomy Department, University of Texas, Austin, TX 78712, USA. (United States); Shull, J. Michael [Also at Institute of Astronomy, Cambridge University, Cambridge CB3 OHA, UK. (United Kingdom); Danforth, Charles W.; Tilton, Evan M., E-mail: stevans@astro.as.utexas.edu, E-mail: michael.shull@colorado.edu, E-mail: charles.danforth@colorado.edu, E-mail: evan.tilton@colorado.edu [CASA, Department of Astrophysical and Planetary Sciences, University of Colorado, Boulder, CO 80309 (United States)

    2014-10-10

    The ionizing fluxes from quasars and other active galactic nuclei (AGNs) are critical for interpreting their emission-line spectra and for photoionizing and heating the intergalactic medium. Using far-ultraviolet (FUV) spectra from the Cosmic Origins Spectrograph (COS) on the Hubble Space Telescope (HST), we directly measure the rest-frame ionizing continua and emission lines for 159 AGNs at redshifts 0.001 < z {sub AGN} < 1.476 and construct a composite spectrum from 475 to 1875 Å. We identify the underlying AGN continuum and strong extreme ultraviolet (EUV) emission lines from ions of oxygen, neon, and nitrogen after masking out absorption lines from the H I Ly? forest, 7 Lyman-limit systems (N{sub H} {sub I}?10{sup 17.2} cm{sup –2}) and 214 partial Lyman-limit systems (14.5

  2. Ringfield lithographic camera

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM)

    1998-01-01

    A projection lithography camera is presented with a wide ringfield optimized so as to make efficient use of extreme ultraviolet radiation from a large area radiation source (e.g., D.sub.source .apprxeq.0.5 mm). The camera comprises four aspheric mirrors optically arranged on a common axis of symmetry with an increased etendue for the camera system. The camera includes an aperture stop that is accessible through a plurality of partial aperture stops to synthesize the theoretical aperture stop. Radiation from a mask is focused to form a reduced image on a wafer, relative to the mask, by reflection from the four aspheric mirrors.

  3. Ringfield lithographic camera

    DOE Patents [OSTI]

    Sweatt, W.C.

    1998-09-08

    A projection lithography camera is presented with a wide ringfield optimized so as to make efficient use of extreme ultraviolet radiation from a large area radiation source (e.g., D{sub source} {approx_equal} 0.5 mm). The camera comprises four aspheric mirrors optically arranged on a common axis of symmetry. The camera includes an aperture stop that is accessible through a plurality of partial aperture stops to synthesize the theoretical aperture stop. Radiation from a mask is focused to form a reduced image on a wafer, relative to the mask, by reflection from the four aspheric mirrors. 11 figs.

  4. Development of extreme ultraviolet and soft x-ray multilayer optics for scientific studies with femtosecond/attosecond sources

    SciTech Connect (OSTI)

    Aquila, Andrew Lee

    2009-05-21

    The development of multilayer optics for extreme ultraviolet (EUV) radiation has led to advancements in many areas of science and technology, including materials studies, EUV lithography, water window microscopy, plasma imaging, and orbiting solar physics imaging. Recent developments in femtosecond and attosecond EUV pulse generation from sources such as high harmonic generation lasers, combined with the elemental and chemical specificity provided by EUV radiation, are opening new opportunities to study fundamental dynamic processes in materials. Critical to these efforts is the design and fabrication of multilayer optics to transport, focus, shape and image these ultra-fast pulses This thesis describes the design, fabrication, characterization, and application of multilayer optics for EUV femtosecond and attosecond scientific studies. Multilayer mirrors for bandwidth control, pulse shaping and compression, tri-material multilayers, and multilayers for polarization control are described. Characterization of multilayer optics, including measurement of material optical constants, reflectivity of multilayer mirrors, and metrology of reflected phases of the multilayer, which is critical to maintaining pulse size and shape, were performed. Two applications of these multilayer mirrors are detailed in the thesis. In the first application, broad bandwidth multilayers were used to characterize and measure sub-100 attosecond pulses from a high harmonic generation source and was performed in collaboration with the Max-Planck institute for Quantum Optics and Ludwig- Maximilians University in Garching, Germany, with Professors Krausz and Kleineberg. In the second application, multilayer mirrors with polarization control are useful to study femtosecond spin dynamics in an ongoing collaboration with the T-REX group of Professor Parmigiani at Elettra in Trieste, Italy. As new ultrafast x-ray sources become available, for example free electron lasers, the multilayer designs described in this thesis can be extended to higher photon energies, and such designs can be used with those sources to enable new scientific studies, such as molecular bonding, phonon, and spin dynamics.

  5. Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns

    DOE Patents [OSTI]

    Hau-Riege, Stefan Peter (Fremont, CA)

    2007-05-01

    The invention applies techniques for image reconstruction from X-ray diffraction patterns on the three-dimensional imaging of defects in EUVL multilayer films. The reconstructed image gives information about the out-of-plane position and the diffraction strength of the defect. The positional information can be used to select the correct defect repair technique. This invention enables the fabrication of defect-free (since repaired) X-ray Mo--Si multilayer mirrors. Repairing Mo--Si multilayer-film defects on mask blanks is a key for the commercial success of EUVL. It is known that particles are added to the Mo--Si multilayer film during the fabrication process. There is a large effort to reduce this contamination, but results are not sufficient, and defects continue to be a major mask yield limiter. All suggested repair strategies need to know the out-of-plane position of the defects in the multilayer.

  6. Optimized focal and pupil plane masks for vortex coronagraphs on telescopes with obstructed apertures

    E-Print Network [OSTI]

    Ruane, Garreth J; Huby, Elsa; Mawet, Dimitri; Delacroix, Christian; Carlomagno, Brunella; Piron, Pierre; Swartzlander, Grover A

    2015-01-01

    We present methods for optimizing pupil and focal plane optical elements that improve the performance of vortex coronagraphs on telescopes with obstructed or segmented apertures. Phase-only and complex masks are designed for the entrance pupil, focal plane, and the plane of the Lyot stop. Optimal masks are obtained using both analytical and numerical methods. The latter makes use of an iterative error reduction algorithm to calculate "correcting" optics that mitigate unwanted diffraction from aperture obstructions. We analyze the achieved performance in terms of starlight suppression, contrast, off-axis image quality, and chromatic dependence. Manufacturing considerations and sensitivity to aberrations are also discussed. This work provides a path to joint optimization of multiple coronagraph planes to maximize sensitivity to exoplanets and other faint companions.

  7. Patterned Exfoliation of GaAs Based on Masked Helium Implantation and Subsequent Rapid Thermal Annealing

    SciTech Connect (OSTI)

    Woo, H. J.; Choi, H. W.; Kim, G. D.; Hong, W.; Kim, J. K.

    2009-03-10

    A method of patterning single crystal GaAs based on ion implantation induced selective area exfoliation is suggested. Samples were implanted with 200-500 keV helium ions to a fluence range of 2-4x10{sup 16} He{sup +}/cm{sup 2} at room temperature through masks of Ni mesh (40 {mu}m opening) or stainless steel wire (50 {mu}m in diameter), and subsequent rapid thermal annealing at 350-500{open_square} resulted in expulsion of ion beam exposed material. The influences of ion energy, ion fluence, implantation temperature, subsequent annealing conditions (temperature and ramp rate), and mask pattern and its orientation with GaAs lattice on the patterned exfoliation were examined.

  8. Computer-aided engineering system for design of sequence arrays and lithographic masks

    DOE Patents [OSTI]

    Hubbell, E.A.; Morris, M.S.; Winkler, J.L.

    1999-01-05

    An improved set of computer tools for forming arrays is disclosed. According to one aspect of the invention, a computer system is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files to design and/or generate lithographic masks. 14 figs.

  9. Computer-aided engineering system for design of sequence arrays and lithographic masks

    DOE Patents [OSTI]

    Hubbell, E.A.; Morris, M.S.; Winkler, J.L.

    1996-11-05

    An improved set of computer tools for forming arrays is disclosed. According to one aspect of the invention, a computer system is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files to design and/or generate lithographic masks. 14 figs.

  10. Computer-aided engineering system for design of sequence arrays and lithographic masks

    DOE Patents [OSTI]

    Hubbell, Earl A. (Mt. View, CA); Morris, MacDonald S. (San Jose, CA); Winkler, James L. (Palo Alto, CA)

    1996-01-01

    An improved set of computer tools for forming arrays. According to one aspect of the invention, a computer system (100) is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files (104) to design and/or generate lithographic masks (110).

  11. Computer-aided engineering system for design of sequence arrays and lithographic masks

    DOE Patents [OSTI]

    Hubbell, Earl A. (Mt. View, CA); Morris, MacDonald S. (San Jose, CA); Winkler, James L. (Palo Alto, CA)

    1999-01-05

    An improved set of computer tools for forming arrays. According to one aspect of the invention, a computer system (100) is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files (104) to design and/or generate lithographic masks (110).

  12. Planck CMB anomalies: astrophysical and cosmological secondary effects and the curse of masking

    SciTech Connect (OSTI)

    Rassat, A.; Starck, J.-L.; Paykari, P.; Sureau, F.; Bobin, J. E-mail: jstarck@cea.fr E-mail: florent.sureau@cea.fr

    2014-08-01

    Large-scale anomalies have been reported in CMB data with both WMAP and Planck data. These could be due to foreground residuals and or systematic effects, though their confirmation with Planck data suggests they are not due to a problem in the WMAP or Planck pipelines. If these anomalies are in fact primordial, then understanding their origin is fundamental to either validate the standard model of cosmology or to explore new physics. We investigate three other possible issues: 1) the trade-off between minimising systematics due to foreground contamination (with a conservative mask) and minimising systematics due to masking, 2) astrophysical secondary effects (the kinetic Doppler quadrupole and kinetic Sunyaev-Zel'dovich effect), and 3) secondary cosmological signals (the integrated Sachs-Wolfe effect). We address the masking issue by considering new procedures that use both WMAP and Planck to produce higher quality full-sky maps using the sparsity methodology (LGMCA maps). We show the impact of masking is dominant over that of residual foregrounds, and the LGMCA full-sky maps can be used without further processing to study anomalies. We consider four official Planck PR1 and two LGMCA CMB maps. Analysis of the observed CMB maps shows that only the low quadrupole and quadrupole-octopole alignment seem significant, but that the planar octopole, Axis of Evil, mirror parity and cold spot are not significant in nearly all maps considered. After subtraction of astrophysical and cosmological secondary effects, only the low quadrupole may still be considered anomalous, meaning the significance of only one anomaly is affected by secondary effect subtraction out of six anomalies considered. In the spirit of reproducible research all reconstructed maps and codes will be made available for download here http://www.cosmostat.org/anomaliesCMB.html.

  13. Assessing out-of-band flare effects at the wafer level for EUV lithography

    SciTech Connect (OSTI)

    George, Simi; Naulleau, Patrick; Kemp, Charles; Denham, Paul; Rekawa, Senajith

    2010-01-25

    To accurately estimate the flare contribution from the out-of-band (OOB), the integration of a DUV source into the SEMATECH Berkeley 0.3-NA Micro-field Exposure tool is proposed, enabling precisely controlled exposures along with the EUV patterning of resists in vacuum. First measurements evaluating the impact of bandwidth selected exposures with a table-top set-up and subsequent EUV patterning show significant impact on line-edge roughness and process performance. We outline a simulation-based method for computing the effective flare from resist sensitive wavelengths as a function of mask pattern types and sizes. This simulation method is benchmarked against measured OOB flare measurements and the results obtained are in agreement.

  14. Masked priming and ERPs dissociate maturation of orthographic and semantic components of visual word recognition in children

    E-Print Network [OSTI]

    Eddy, Marianna D.

    This study examined the time-course of reading single words in children and adults using masked repetition priming and the recording of event-related potentials. The N250 and N400 repetition priming effects were used to ...

  15. Enhanced Ultraviolet Cancellations in N = 5 Supergravity at Four Loop

    E-Print Network [OSTI]

    Zvi Bern; Scott Davies; Tristan Dennen

    2014-09-09

    We show that the four-loop four-point amplitudes of N = 5 supergravity are ultraviolet finite in four dimensions, contrary to expectations based on supersymmetry and duality-symmetry arguments. We explain why the diagrams of any covariant local formalism cannot manifestly exhibit the necessary cancellations for finiteness but instead require a new type of nontrivial ultraviolet cancellation that we call "enhanced cancellations". We also show that the three-loop four-point amplitudes in N = 4 and N = 5 supergravity theories display enhanced cancellations. To construct the loop integrand, we use the duality between color and kinematics. We apply standard methods for extracting ultraviolet divergences in conjunction with the FIRE5 integral reduction program to arrive at the four-loop results.

  16. Reflective optical imaging system with balanced distortion

    DOE Patents [OSTI]

    Chapman, Henry N. (Sunol, CA); Hudyma, Russell M. (San Ramon, CA); Shafer, David R. (Fairfield, CT); Sweeney, Donald W. (San Ramon, CA)

    1999-01-01

    An optical system compatible with short wavelength (extreme ultraviolet) An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four reflective elements for projecting a mask image onto a substrate. The four optical elements comprise, in order from object to image, convex, concave, convex and concave mirrors. The optical system is particularly suited for step and scan lithography methods. The invention enables the use of larger slit dimensions associated with ring field scanning optics, improves wafer throughput and allows higher semiconductor device density. The inventive optical system is characterized by reduced dynamic distortion because the static distortion is balanced across the slit width.

  17. Note on ultraviolet renormalization and ground state energy of the Nelson model

    E-Print Network [OSTI]

    Fumio Hiroshima

    2015-07-19

    Ultraviolet (UV) renormalization of the Nelson model in quantum field theory is considered. A relationship between a ultraviolet renormalization term and the ground state energy of the Hamiltonian with total momentum zero is studied by functional integrations.

  18. Solar ultraviolet-B radiation and vitamin D: a cross-sectional population-based study

    E-Print Network [OSTI]

    Wirosoetisno, Djoko

    Solar ultraviolet-B radiation and vitamin D: a cross-sectional population-based study using data, J. A. (2012) Solar ultraviolet-B radiation and vitamin D: a cross-sectional population-based study Access Solar ultraviolet-B radiation and vitamin D: a cross-sectional population-based study using data

  19. Key issues of ultraviolet radiation of OH at high altitudes

    SciTech Connect (OSTI)

    Zhang, Yuhuai; Wan, Tian; Jiang, Jianzheng; Fan, Jing

    2014-12-09

    Ultraviolet (UV) emissions radiated by hydroxyl (OH) is one of the fundamental elements in the prediction of radiation signature of high-altitude and high-speed vehicle. In this work, the OH A{sup 2}?{sup +}?X{sup 2}? ultraviolet emission band behind the bow shock is computed under the experimental condition of the second bow-shock ultraviolet flight (BSUV-2). Four related key issues are discussed, namely, the source of hydrogen element in the high-altitude atmosphere, the formation mechanism of OH species, efficient computational algorithm of trace species in rarefied flows, and accurate calculation of OH emission spectra. Firstly, by analyzing the typical atmospheric model, the vertical distributions of the number densities of different species containing hydrogen element are given. According to the different dominating species containing hydrogen element, the atmosphere is divided into three zones, and the formation mechanism of OH species is analyzed in the different zones. The direct simulation Monte Carlo (DSMC) method and the Navier-Stokes equations are employed to compute the number densities of the different OH electronically and vibrationally excited states. Different to the previous work, the trace species separation (TSS) algorithm is applied twice in order to accurately calculate the densities of OH species and its excited states. Using a non-equilibrium radiation model, the OH ultraviolet emission spectra and intensity at different altitudes are computed, and good agreement is obtained with the flight measured data.

  20. THE LOCAL INTERSTELLAR ULTRAVIOLET RADIATION FIELD Richard Conn Henry1

    E-Print Network [OSTI]

    THE LOCAL INTERSTELLAR ULTRAVIOLET RADIATION FIELD Richard Conn Henry1 Center for Astrophysical 21218; henry@jhu.edu Received 2001 July 20; accepted 2002 January 16 ABSTRACT I have used the Hipparcos of the interstellar extinction, to create a model of the expected intensity and spectral dis- tribution of the local

  1. Gas Mask 

    E-Print Network [OSTI]

    Unknown

    2011-09-05

    The gas industry fostered more efficient energy utilization long before the idea of energy conservation became fashionable. It became apparent in the late '60's that misguided Federal Legislation was discouraging necessary search for new gas...

  2. Wavelet-Smoothed Interpolation of Masked Scientific Data for JPEG 2000 Compression

    SciTech Connect (OSTI)

    Brislawn, Christopher M. [Los Alamos National Laboratory

    2012-08-13

    How should we manage scientific data with 'holes'? Some applications, like JPEG 2000, expect logically rectangular data, but some sources, like the Parallel Ocean Program (POP), generate data that isn't defined on certain subsets. We refer to grid points that lack well-defined, scientifically meaningful sample values as 'masked' samples. Wavelet-smoothing is a highly scalable interpolation scheme for regions with complex boundaries on logically rectangular grids. Computation is based on forward/inverse discrete wavelet transforms, so runtime complexity and memory scale linearly with respect to sample count. Efficient state-of-the-art minimal realizations yield small constants (O(10)) for arithmetic complexity scaling, and in-situ implementation techniques make optimal use of memory. Implementation in two dimensions using tensor product filter banks is straighsorward and should generalize routinely to higher dimensions. No hand-tuning required when the interpolation mask changes, making the method aeractive for problems with time-varying masks. Well-suited for interpolating undefined samples prior to JPEG 2000 encoding. The method outperforms global mean interpolation, as judged by both SNR rate-distortion performance and low-rate artifact mitigation, for data distributions whose histograms do not take the form of sharply peaked, symmetric, unimodal probability density functions. These performance advantages can hold even for data whose distribution differs only moderately from the peaked unimodal case, as demonstrated by POP salinity data. The interpolation method is very general and is not tied to any particular class of applications, could be used for more generic smooth interpolation.

  3. Fabrication of triangular nanobeam waveguide networks in bulk diamond using single-crystal silicon hard masks

    SciTech Connect (OSTI)

    Bayn, I.; Mouradian, S.; Li, L.; Goldstein, J. A.; Schröder, T.; Zheng, J.; Chen, E. H.; Gaathon, O.; Englund, Dirk; Lu, M.; Stein, A.; Ruggiero, C. A.; Salzman, J.; Kalish, R.

    2014-11-24

    A scalable approach for integrated photonic networks in single-crystal diamond using triangular etching of bulk samples is presented. We describe designs of high quality factor (Q?=?2.51?×?10{sup 6}) photonic crystal cavities with low mode volume (V{sub m}?=?1.062?×?(?/n){sup 3}), which are connected via waveguides supported by suspension structures with predicted transmission loss of only 0.05?dB. We demonstrate the fabrication of these structures using transferred single-crystal silicon hard masks and angular dry etching, yielding photonic crystal cavities in the visible spectrum with measured quality factors in excess of Q?=?3?×?10{sup 3}.

  4. Patterned graphene functionalization via mask-free scanning of micro-plasma jet under ambient condition

    SciTech Connect (OSTI)

    Ye, Dong; Yu, Yao Liu, Lin; Wu, Shu-Qun; Lu, Xin-Pei; Wu, Yue

    2014-03-10

    In this work, a mask-free method is introduced for patterned nitrogen doping of graphene using a micro-plasma jet under ambient condition. Raman and X-ray photoelectron spectroscopy spectra indicate that nitrogen atoms are incorporated into the graphene lattice with the two-dimensional spatial distribution precisely controlled in the range of mm down to 10??m. Since the chemistry of the micro-plasma jet can be controlled by the choice of the gas mixture, this direct writing process with micro-plasma jet can be a versatile approach for patterned functionalization of graphene with high spatial resolution. This could have promising applications in graphene-based electronics.

  5. Development of computer program ENMASK for prediction of residual environmental masking-noise spectra, from any three independent environmental parameters

    SciTech Connect (OSTI)

    Chang, Y.-S.; Liebich, R. E.; Chun, K. C.

    2000-03-31

    Residual environmental sound can mask intrusive4 (unwanted) sound. It is a factor that can affect noise impacts and must be considered both in noise-impact studies and in noise-mitigation designs. Models for quantitative prediction of sensation level (audibility) and psychological effects of intrusive noise require an input with 1/3 octave-band spectral resolution of environmental masking noise. However, the majority of published residual environmental masking-noise data are given with either octave-band frequency resolution or only single A-weighted decibel values. A model has been developed that enables estimation of 1/3 octave-band residual environmental masking-noise spectra and relates certain environmental parameters to A-weighted sound level. This model provides a correlation among three environmental conditions: measured residual A-weighted sound-pressure level, proximity to a major roadway, and population density. Cited field-study data were used to compute the most probable 1/3 octave-band sound-pressure spectrum corresponding to any selected one of these three inputs. In turn, such spectra can be used as an input to models for prediction of noise impacts. This paper discusses specific algorithms included in the newly developed computer program ENMASK. In addition, the relative audibility of the environmental masking-noise spectra at different A-weighted sound levels is discussed, which is determined by using the methodology of program ENAUDIBL.

  6. The pilus usher controls protein interactions via domain masking and is functional as an oligomer

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Werneburg, Glenn T.; Li, Huilin; Henderson, Nadine S.; Portnoy, Erica B.; Sarowar, Samema; Hultgren, Scott J.; Thanassi, David G.

    2015-06-08

    The chaperone/usher (CU) pathway is responsible for biogenesis of organelles termed pili or fimbriae in Gram-negative bacteria. Type 1 pili expressed by uropathogenic Escherichia coli are prototypical structures assembled by the CU pathway. Assembly and secretion of pili by the CU pathway requires a dedicated periplasmic chaperone and a multidomain outer membrane protein termed the usher (FimD). We show that the FimD C-terminal domains provide the high-affinity substrate binding site, but that these domains are masked in the resting usher. Domain masking requires the FimD plug domain, which served as a central switch controlling usher activation. In addition, we demonstratemore »that usher molecules can act in trans for pilus biogenesis, providing conclusive evidence for a functional usher oligomer. These results reveal mechanisms by which molecular machines such as the usher regulate and harness protein-protein interactions, and suggest that ushers may interact in a cooperative manner during pilus assembly in bacteria.« less

  7. Sub-50 nm scratch-proof DLC molds for reversal nanoimprint lithography L. Tao, C. T. Nelson, K. Trivedi, S. Ramachandran, M. Goeckner, L. Overzet, and Walter Hua)

    E-Print Network [OSTI]

    Hu, Wenchuang "Walter"

    Sub-50 nm scratch-proof DLC molds for reversal nanoimprint lithography L. Tao, C. T. Nelson, K of the industry is related to the mold life time that significantly affects cost of ownership and manufacturing reproducibility. Nowadays, most often used Si or glass molds that are very expensive can be damaged after certain

  8. High extraction efficiency ultraviolet light-emitting diode

    DOE Patents [OSTI]

    Wierer, Jonathan; Montano, Ines; Allerman, Andrew A.

    2015-11-24

    Ultraviolet light-emitting diodes with tailored AlGaN quantum wells can achieve high extraction efficiency. For efficient bottom light extraction, parallel polarized light is preferred, because it propagates predominately perpendicular to the QW plane and into the typical and more efficient light escape cones. This is favored over perpendicular polarized light that propagates along the QW plane which requires multiple, lossy bounces before extraction. The thickness and carrier density of AlGaN QW layers have a strong influence on the valence subband structure, and the resulting optical polarization and light extraction of ultraviolet light-emitting diodes. At Al>0.3, thinner QW layers (<2.5 nm are preferred) result in light preferentially polarized parallel to the QW plane. Also, active regions consisting of six or more QWs, to reduce carrier density, and with thin barriers, to efficiently inject carriers in all the QWs, are preferred.

  9. Single-crystalline aluminum film for ultraviolet plasmonic nanolasers

    E-Print Network [OSTI]

    Chou, Bo-Tsun; Wu, Yen-Mo; Chung, Yi-Chen; Hsueh, Wei-Jen; Lin, Shih-Wei; Lu, Tien-Chang; Lin, Tzy-Rong; Lin, Sheng-Di

    2015-01-01

    Plasmonic devices have advanced significantly in the past decade. Being one of the most intriguing devices, plamonic nanolasers plays an important role in biomedicine, chemical sensor, information technology, and optical integrated circuits. However, nanoscale plasmonic devices, particularly in ultraviolet regime, are extremely sensitive to metal and interface quality, which renders the development of ultraviolet plasmonics. Here, by addressing the material issues, we demonstrate a low threshold, high characteristic temperature metal-oxide-semiconductor ZnO nanolaser working at room temperature. The template for ZnO nanowires consists of a flat single-crystalline aluminum film grown by molecular beam epitaxy and an ultra-smooth Al2O3 spacer layer prepared by atomic layer deposition. By effectively reducing surface plasmon scattering loss and metal intrinsic absorption loss, the high-quality metal film and sharp interfaces between layers boost the device performance. Our work paves the way for future applicati...

  10. PULSE: The Palomar Ultraviolet Laser for the Study of Exoplanets

    E-Print Network [OSTI]

    Baranec, Christoph; Burruss, Rick S; Bowler, Brendan P; van Dam, Marcos; Riddle, Reed; Shelton, J Christopher; Truong, Tuan; Roberts, Jennifer; Milburn, Jennifer; Tesch, Jonathan

    2014-01-01

    The Palomar Ultraviolet Laser for the Study of Exoplanets (PULSE) will dramatically expand the science reach of PALM-3000, the facility high-contrast extreme adaptive optics system on the 5-meter Hale Telescope. By using an ultraviolet laser to measure the dominant high spatial and temporal order turbulence near the telescope aperture, one can increase the limiting natural guide star magnitude for exquisite correction from mV < 10 to mV < 16. Providing the highest near-infrared Strehl ratios from any large telescope laser adaptive optics system, PULSE uniquely enables spectroscopy of low-mass and more distant young exoplanet systems, essential to formulating a complete picture of exoplanet populations.

  11. Inorganic volumetric light source excited by ultraviolet light

    DOE Patents [OSTI]

    Reed, S.; Walko, R.J.; Ashley, C.S.; Brinker, C.J.

    1994-04-26

    The invention relates to a composition for the volumetric generation of radiation. The composition comprises a porous substrate loaded with a component capable of emitting radiation upon interaction with an exciting radiation. Preferably, the composition is an aerogel substrate loaded with a component, e.g., a phosphor, capable of interacting with exciting radiation of a first energy, e.g., ultraviolet light, to produce radiation of a second energy, e.g., visible light. 4 figures.

  12. Amplitudes and Ultraviolet Behavior of N = 8 Supergravity

    SciTech Connect (OSTI)

    Bern, Zvi; Carrasco, John Joseph; Dixon, Lance J.; Johansson, Henrik; Roiban, Radu; /Penn State U.

    2011-05-20

    In this contribution we describe computational tools that permit the evaluation of multi-loop scattering amplitudes in N = 8 supergravity, in terms of amplitudes in N = 4 super-Yang-Mills theory. We also discuss the remarkable ultraviolet behavior of N = 8 supergravity, which follows from these amplitudes, and is as good as that of N = 4 super-Yang-Mills theory through at least four loops.

  13. Durable Corrosion and Ultraviolet-Resistant Silver Mirror

    DOE Patents [OSTI]

    Jorgensen, G. J.; Gee, R.

    2006-01-24

    A corrosion and ultra violet-resistant silver mirror for use in solar reflectors; the silver layer having a film-forming protective polymer bonded thereto, and a protective shield overlay comprising a transparent multipolymer film that incorporates a UV absorber. The corrosion and ultraviolet resistant silver mirror retains spectral hemispherical reflectance and high optical clarity throughout the UV and visible spectrum when used in solar reflectors.

  14. Inorganic volumetric light source excited by ultraviolet light

    DOE Patents [OSTI]

    Reed, Scott (Albuquerue, NM); Walko, Robert J. (Albuquerue, NM); Ashley, Carol S. (Albuquerue, NM); Brinker, C. Jeffrey (Albuquerue, NM)

    1994-01-01

    The invention relates to a composition for the volumetric generation of radiation. The composition comprises a porous substrate loaded with a component capable of emitting radiation upon interaction with an exciting radiation. Preferably, the composition is an aerogel substrate loaded with a component, e.g., a phosphor, capable of interacting with exciting radiation of a first energy, e.g., ultraviolet light, to produce radiation of a second energy, e.g., visible light.

  15. THE ULTRAVIOLET BRIGHTEST TYPE Ia SUPERNOVA 2011de

    SciTech Connect (OSTI)

    Brown, Peter J., E-mail: pbrown@physics.tamu.edu [George P. and Cynthia Woods Mitchell Institute for Fundamental Physics and Astronomy, Texas A and M University, Department of Physics and Astronomy, 4242 TAMU, College Station, TX 77843 (United States)

    2014-11-20

    We present and discuss the ultraviolet (UV)/optical photometric light curves and absolute magnitudes of the Type Ia supernova (SN Ia) 2011de from the Swift Ultraviolet/Optical Telescope. We find it to be the UV brightest SN Ia yet observed—more than a factor of 10 brighter than normal SNe Ia in the mid-ultraviolet. We find that the UV/optical brightness and broad light curve evolution can be modeled with additional flux from the shock of the ejecta hitting a relatively large red giant companion separated by 6 × 10{sup 13} cm. However, the post-maximum behavior of other UV-bright SNe Ia can also be modeled in a similar manner, including objects with UV spectroscopy or pre-maximum photometry which is inconsistent with this model. This suggests that similar UV luminosities can be intrinsic or caused by other forms of shock interaction. The high velocities reported for SN 2011de make it distinct from the UV-bright ''super-Chandrasekhar'' SNe Ia and the NUV-blue group of normal SNe Ia. SN 2011de is an extreme example of the UV variations in SNe Ia.

  16. Creating bio-inspired hierarchical 3D-2D photonic stacks via planar lithography on self-assembled inverse opals

    E-Print Network [OSTI]

    Ian B. Burgess; Joanna Aizenberg; Marko Loncar

    2012-11-29

    Structural hierarchy and complex 3D architecture are characteristics of biological photonic designs that are challenging to reproduce in synthetic materials. Top-down lithography allows for designer patterning of arbitrary shapes, but is largely restricted to planar 2D structures. Self-assembly techniques facilitate easy fabrication of 3D photonic crystals, but controllable defect-integration is difficult. In this paper we combine the advantages of top-down and bottom-up fabrication, developing two techniques to deposit 2D-lithographically-patterned planar layers on top of or in between inverse-opal 3D photonic crystals and creating hierarchical structures that resemble the architecture of the bright green wing scales of the butterfly, Parides sesostris. These fabrication procedures, combining advantages of both top-down and bottom-up fabrication, may prove useful in the development of omnidirectional coloration elements and 3D-2D photonic crystal devices.

  17. Creating bio-inspired hierarchical 3D-2D photonic stacks via planar lithography on self-assembled inverse opals

    E-Print Network [OSTI]

    Burgess, Ian B; Loncar, Marko

    2012-01-01

    Structural hierarchy and complex 3D architecture are characteristics of biological photonic designs that are challenging to reproduce in synthetic materials. Top-down lithography allows for designer patterning of arbitrary shapes, but is largely restricted to planar 2D structures. Self-assembly techniques facilitate easy fabrication of 3D photonic crystals, but controllable defect-integration is difficult. In this paper we combine the advantages of top-down and bottom-up fabrication, developing two techniques to deposit 2D-lithographically-patterned planar layers on top of or in between inverse-opal 3D photonic crystals and creating hierarchical structures that resemble the architecture of the bright green wing scales of the butterfly, Parides sesostris. These fabrication procedures, combining advantages of both top-down and bottom-up fabrication, may prove useful in the development of omnidirectional coloration elements and 3D-2D photonic crystal devices.

  18. A NEW ALGORITHM FOR RADIOISOTOPE IDENTIFICATION OF SHIELDED AND MASKED SNM/RDD MATERIALS

    SciTech Connect (OSTI)

    Jeffcoat, R.

    2012-06-05

    Detection and identification of shielded and masked nuclear materials is crucial to national security, but vast borders and high volumes of traffic impose stringent requirements for practical detection systems. Such tools must be be mobile, and hence low power, provide a low false alarm rate, and be sufficiently robust to be operable by non-technical personnel. Currently fielded systems have not achieved all of these requirements simultaneously. Transport modeling such as that done in GADRAS is able to predict observed spectra to a high degree of fidelity; our research is focusing on a radionuclide identification algorithm that inverts this modeling within the constraints imposed by a handheld device. Key components of this work include incorporation of uncertainty as a function of both the background radiation estimate and the hypothesized sources, dimensionality reduction, and nonnegative matrix factorization. We have partially evaluated performance of our algorithm on a third-party data collection made with two different sodium iodide detection devices. Initial results indicate, with caveats, that our algorithm performs as good as or better than the on-board identification algorithms. The system developed was based on a probabilistic approach with an improved approach to variance modeling relative to past work. This system was chosen based on technical innovation and system performance over algorithms developed at two competing research institutions. One key outcome of this probabilistic approach was the development of an intuitive measure of confidence which was indeed useful enough that a classification algorithm was developed based around alarming on high confidence targets. This paper will present and discuss results of this novel approach to accurately identifying shielded or masked radioisotopes with radiation detection systems.

  19. Many roads lead to recognition: Electrophysiological correlates of familiarity derived from short-term masked repetition priming

    E-Print Network [OSTI]

    Henson, Rik

    cues via masked repetition priming. Replicating previous findings, the proportion of words endorsed; Norman, 2010; Shiffrin & Steyvers, 1997). As such, patterns of neural activity that vary continuously, it has been argued that recollection can also be graded or continuous, such that familiarity and weak

  20. USER EVALUATION OF THE MASK KIOSK L. Lamel, S. Bennacef, J.L. Gauvain, H. Dartiguesy, J.N. Tememy

    E-Print Network [OSTI]

    USER EVALUATION OF THE MASK KIOSK L. Lamel, S. Bennacef, J.L. Gauvain, H. Dartiguesy, J.N. Tememy with the French Railways (SNCF) and the Ergonomics group at the University College of London (UCL). The time) and the Ergonomics group at UCL (University College London). The physical design of the prototype kiosk has been

  1. Soft Harmonic Masks for Recognising Speech in the Presence of a Competing Andre Coy and Jon Barker

    E-Print Network [OSTI]

    Barker, Jon

    energy cannot be reliably labelled as either one source or the other. This typically happens whenSoft Harmonic Masks for Recognising Speech in the Presence of a Competing Speaker Andr´e Coy of recognising speech in the presence of a competing speaker. It uses a two stage `Speech Fragment Decoding

  2. Wavelength Invariant Bi/In Thermal Resist As A Si Anisotropic Etch Masking Layer And Direct Write Photomask Material

    E-Print Network [OSTI]

    Chapman, Glenn H.

    . Thermal modeling has confirmed the exposure time/optical energy requirements for Bi/In. Exposed these problems: an inorganic based resist activated by optically driven thermal processes, i.e. a thermal resistWavelength Invariant Bi/In Thermal Resist As A Si Anisotropic Etch Masking Layer And Direct Write

  3. Analysis of Mask-Based Nanowire Decoders Eric Rachlin, Student Member, IEEE, and John E. Savage, Life Fellow, IEEE

    E-Print Network [OSTI]

    Savage, John

    is controlling parallel sets of nanowires (NWs), such as those in crossbars, using a moderate number of mesoscale wires. Three similar methods have been proposed to control NWs using a set of perpendicular mesoscale between NWs and mesoscale wires, and the third, a mask-based approach, interposes high-K dielectric

  4. Good Halftone Masks via Genetic Algorithms Peter G. Anderson, Jonathan S. Arney, Samuel A. Inverso, Daniel R. Kunkle,

    E-Print Network [OSTI]

    Anderson, Peter G.

    of relatively poor individuals to keep the popula- tion size constant. It mutates then evaluates the new individuals. This process terminates after a predetermined time or when a satisfactory individual appears. GAs figure of merit ex- presses how well a mask renders a constant gray image--from the point of view

  5. Fast Yield-Driven Fracture for Variable Shaped-Beam Mask Andrew B. Kahng, Xu Xu and Alex Zelikovsky

    E-Print Network [OSTI]

    Zelikovsky, Alexander

    Fast Yield-Driven Fracture for Variable Shaped-Beam Mask Writing Andrew B. Kahng, Xu Xu and Alex process generation have collectively presented new challenges for current fracture tools, which-dimension errors. Some commercial tools are available for handling the sliver minimization problem in fracture

  6. The ultraviolet spectra of SO?¹? and SO?¹? near 2300 A 

    E-Print Network [OSTI]

    Kim, Sang Uk

    1966-01-01

    22 10 Isotope Shift of Bands in the 2300 S02 ~ 13 Vapor Pressure Curve of SO Correction Curve. A System of 24 33 INTRODUCTION SO has three absorption regions in the ultraviolet portion of its spectrum. They are located at 5900 ? 5400 A.... The emission spectrum lines of the iron arc were used as a 14 TABLE I CORRESPONDING PRESSURES AT DIFFERENT TEMPERATURES PLATL' NUMBER 3 Spectrograms Temperatures -100 C - 85'c - 70'0 - 65'c 50 C Pressures 22 mm 33 mm 43 mm 73 15 standard...

  7. Large area, surface discharge pumped, vacuum ultraviolet light source

    DOE Patents [OSTI]

    Sze, Robert C. (Santa Fe, NM); Quigley, Gerard P. (Los Alamos, NM)

    1996-01-01

    Large area, surface discharge pumped, vacuum ultraviolet (VUV) light source. A contamination-free VUV light source having a 225 cm.sup.2 emission area in the 240-340 nm region of the electromagnetic spectrum with an average output power in this band of about 2 J/cm.sup.2 at a wall-plug efficiency of approximately 5% is described. Only ceramics and metal parts are employed in this surface discharge source. Because of the contamination-free, high photon energy and flux, and short pulse characteristics of the source, it is suitable for semiconductor and flat panel display material processing.

  8. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  9. Gamma Ray Burst Constraints on Ultraviolet Lorentz Invariance Violation

    E-Print Network [OSTI]

    Tina Kahniashvili; Grigol Gogoberidze; Bharat Ratra

    2006-10-20

    We present a unified general formalism for ultraviolet Lorentz invariance violation (LV) testing through electromagnetic wave propagation, based on both dispersion and rotation measure data. This allows for a direct comparison of the efficacy of different data to constrain LV. As an example we study the signature of LV on the rotation of the polarization plane of $\\gamma$-rays from gamma ray bursts in a LV model. Here $\\gamma$-ray polarization data can provide a strong constraint on LV, 13 orders of magnitude more restrictive than a potential constraint from the rotation of the cosmic microwave background polarization proposed by Gamboa, L\\'{o}pez-Sarri\\'{o}n, and Polychronakos (2006).

  10. Large area, surface discharge pumped, vacuum ultraviolet light source

    DOE Patents [OSTI]

    Sze, R.C.; Quigley, G.P.

    1996-12-17

    Large area, surface discharge pumped, vacuum ultraviolet (VUV) light source is disclosed. A contamination-free VUV light source having a 225 cm{sup 2} emission area in the 240-340 nm region of the electromagnetic spectrum with an average output power in this band of about 2 J/cm{sup 2} at a wall-plug efficiency of approximately 5% is described. Only ceramics and metal parts are employed in this surface discharge source. Because of the contamination-free, high photon energy and flux, and short pulse characteristics of the source, it is suitable for semiconductor and flat panel display material processing. 3 figs.

  11. Broadband extreme ultraviolet probing of transient gratings in vanadium dioxide

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sistrunk, Emily; Lawrence Livermore National Lab.; Grilj, Jakob; Ecole Polytechnique Federal de Lausanne; Jeong, Jaewoo; Samant, Mahesh G.; Gray, Alexander X.; Temple Univ. Philadelphia, PA; Dürr, Hermann A.; Parkin, Stuart S. P.; et al

    2015-02-11

    Nonlinear spectroscopy in the extreme ultraviolet (EUV) and soft x-ray spectral range offers the opportunity for element selective probing of ultrafast dynamics using core-valence transitions (Mukamel et al., Acc. Chem. Res. 42, 553 (2009)). We demonstrate a step on this path showing core-valence sensitivity in transient grating spectroscopy with EUV probing. We study the optically induced insulator-to-metal transition (IMT) of a VO? film with EUV diffraction from the optically excited sample. The VO? exhibits a change in the 3p-3d resonance of V accompanied by an acoustic response. Due to the broadband probing we are able to separate the two features.

  12. ULTRAVIOLET NUMBER COUNTS OF GALAXIES FROM SWIFT ULTRAVIOLET/OPTICAL TELESCOPE DEEP IMAGING OF THE CHANDRA DEEP FIELD SOUTH

    SciTech Connect (OSTI)

    Hoversten, E. A.; Gronwall, C.; Koch, T. S.; Roming, P. W. A.; Siegel, M. H.; Berk, D. E. Vanden; Breeveld, A. A.; Curran, P. A.; Still, M.

    2009-11-10

    Deep Swift UV/Optical Telescope (UVOT) imaging of the Chandra Deep Field South is used to measure galaxy number counts in three near-ultraviolet (NUV) filters (uvw2: 1928 A, uvm2: 2246 A, and uvw1: 2600 A) and the u band (3645 A). UVOT observations cover the break in the slope of the NUV number counts with greater precision than the number counts by the Hubble Space Telescope Space Telescope Imaging Spectrograph and the Galaxy Evolution Explorer, spanning a range 21 approx< m{sub AB} approx< 25. Model number counts confirm earlier investigations in favoring models with an evolving galaxy luminosity function.

  13. Ultraviolet Free Electron Laser Facility preliminary design report

    SciTech Connect (OSTI)

    Ben-Zvi, I.

    1993-02-01

    This document, the Preliminary Design Report (PDR) for the Brookhaven Ultraviolet Free Electron Laser (UV FEL) facility, describes all the elements of a facility proposed to meet the needs of a research community which requires ultraviolet sources not currently available as laboratory based lasers. Further, for these experiments, the requisite properties are not extant in either the existing second or upcoming third generation synchrotron light sources. This document is the result of our effort at BNL to identify potential users, determine the requirements of their experiments, and to design a facility which can not only satisfy the existing need, but have adequate flexibility for possible future extensions as need dictates and as evolving technology allows. The PDR is comprised of three volumes. In this, the first volume, background for the development of the proposal is given, including descriptions of the UV FEL facility, and representative examples of the science it was designed to perform. Discussion of the limitations and potential directions for growth are also included. A detailed description of the facility design is then provided, which addresses the accelerator, optical, and experimental systems. Information regarding the conventional construction for the facility is contained in an addendum to volume one (IA).

  14. Bipolar charging of dust particles under ultraviolet radiation

    SciTech Connect (OSTI)

    Filippov, A. V. Babichev, V. N.; Fortov, V. E.; Gavrikov, A. V.; Pal', A. F.; Petrov, O. F.; Starostin, A. N.; Sarkarov, N. E.

    2011-05-15

    The photoemission charging of dust particles under ultraviolet radiation from a xenon lamp has been investigated. The velocities of yttrium dust particles with a work function of 3.3 eV and their charges have been determined experimentally; the latter are about 400-500 and about 100 elementary charges per micron of radius for the positively and negatively charged fractions, respectively. The dust particle charging and the dust cloud evolution in a photoemission cell after exposure to an ultraviolet radiation source under the applied voltage have been simulated numerically. The photoemission charging of dust particles has been calculated on the basis of nonlocal and local charging models. Only unipolar particle charging is shown to take place in a system of polydisperse dust particles with the same photoemission efficiency. It has been established that bipolar charging is possible in the case of monodisperse particles with different quantum efficiencies. Polydispersity in this case facilitates the appearance of oppositely charged particles in a photoemission plasma.

  15. The far-ultraviolet spectra of "cool" PG1159 stars

    E-Print Network [OSTI]

    Werner, K; Kruk, J W

    2015-01-01

    We present a comprehensive study of Far Ultraviolet Spectroscopic Explorer (FUSE) spectra (912-1190 A) of two members of the PG1159 spectral class, which consists of hydrogen-deficient (pre-) white dwarfs with effective temperatures in the range Teff = 75,000-200,000 K. As two representatives of the cooler objects, we have selected PG1707+427 (Teff = 85,000 K) and PG1424+535 (Teff = 110,000 K), complementing a previous study of the hotter prototype PG1159-035 (Teff = 140,000 K). The helium-dominated atmospheres are strongly enriched in carbon and oxygen, therefore, their spectra are dominated by lines from C III-IV and O III-VI, many of which were never observed before in hot stars. In addition, lines of many other metals (N, F, Ne, Si, P, S, Ar, Fe) are detectable, demonstrating that observations in this spectral region are most rewarding when compared to the near-ultraviolet and optical wavelength bands. We perform abundance analyses of these species and derive upper limits for several undetected light and ...

  16. Hopkins Ultraviolet Telescope Observations of Nova Circini 1995 and Nova Aquilae 1995

    E-Print Network [OSTI]

    Hopkins Ultraviolet Telescope Observations of Nova Circini 1995 and Nova Aquilae 1995 Bradford W 1995 and Nova Aql 1995 with the Hopkins Ultraviolet Telescope during the Astro­2 space shuttle mission in 1995 March. The spectra cover the wavelength range from 820 š A to 1840 š A with a spectral resolution

  17. Mass transfer during drying of colloidal film beneath a patterned mask that contains a hexagonal array of holes

    E-Print Network [OSTI]

    Tarasevich, Yuri Yu

    2015-01-01

    We simulated an experiment in which a thin colloidal sessile droplet is allowed to dry out on a horizontal hydrophilic surface when a mask just above the droplet predominantly allows evaporation from the droplet free surface directly beneath the holes in the mask [Harris D J, Hu H, Conrad J C and Lewis J A 2007 \\textit{Phys. Rev. Lett.} \\textbf{98} 148301]. We considered one particular case when centre-to-centre spacing between the holes is much less than the drop diameter. In our model, advection, diffusion, and sedimentation were taken into account. FlexPDE was utilized to solve an advection-diffusion equation using the finite element method. The simulation demonstrated that the colloidal particles accumulate below the holes as the solvent evaporates. Diffusion can reduce this accumulation.

  18. Context-based automated defect classification system using multiple morphological masks

    DOE Patents [OSTI]

    Gleason, Shaun S. (Knoxville, TN); Hunt, Martin A. (Knoxville, TN); Sari-Sarraf, Hamed (Lubbock, TX)

    2002-01-01

    Automatic detection of defects during the fabrication of semiconductor wafers is largely automated, but the classification of those defects is still performed manually by technicians. This invention includes novel digital image analysis techniques that generate unique feature vector descriptions of semiconductor defects as well as classifiers that use these descriptions to automatically categorize the defects into one of a set of pre-defined classes. Feature extraction techniques based on multiple-focus images, multiple-defect mask images, and segmented semiconductor wafer images are used to create unique feature-based descriptions of the semiconductor defects. These feature-based defect descriptions are subsequently classified by a defect classifier into categories that depend on defect characteristics and defect contextual information, that is, the semiconductor process layer(s) with which the defect comes in contact. At the heart of the system is a knowledge database that stores and distributes historical semiconductor wafer and defect data to guide the feature extraction and classification processes. In summary, this invention takes as its input a set of images containing semiconductor defect information, and generates as its output a classification for the defect that describes not only the defect itself, but also the location of that defect with respect to the semiconductor process layers.

  19. Volunteering at Research and Cultural Collections From Egyptian shabti figures to nineteenth century medical waxes, from West African Masks to modern British

    E-Print Network [OSTI]

    Birmingham, University of

    century medical waxes, from West African Masks to modern British landscape paintings, the Research: Basic cleaning and conservation of objects e.g. cleaning and waxing outdoor sculpture Basic remedial

  20. Vacuum ultraviolet mass-analyzed threshold ionization spectroscopy of p-, m-, and o-difluorobenzenes. Ionization energies

    E-Print Network [OSTI]

    Kim, Myung Soo

    Vacuum ultraviolet mass-analyzed threshold ionization spectroscopy of p-, m-, and o been measured by vacuum ultraviolet mass-analyzed threshold ionization VUV-MATI spectroscopy. From use of monochromatic and tunable vacuum ultraviolet radia- tion which is not routinely available

  1. Vacuum-ultraviolet mass-analyzed threshold ionization spectra of iodobutane isomers: Conformer-specific ionization and ion-core

    E-Print Network [OSTI]

    Kim, Myung Soo

    Vacuum-ultraviolet mass-analyzed threshold ionization spectra of iodobutane isomers: Conformer-analyzed threshold ionization MATI spectra using coherent vacuum ultraviolet radiation have been obtained for t-photon MATI spectroscopy using a vacuum-ultraviolet VUV laser source generated by four-wave mixing in Kr gas.8

  2. Impact of polymer film thickness and cavity size on polymer flow during embossing : towards process design rules for nanoimprint lithography.

    SciTech Connect (OSTI)

    Schunk, Peter Randall; King, William P. (Georgia Institute of Technology, Atlanta, GA); Sun, Amy Cha-Tien; Rowland, Harry D.

    2006-08-01

    This paper presents continuum simulations of polymer flow during nanoimprint lithography (NIL). The simulations capture the underlying physics of polymer flow from the nanometer to millimeter length scale and examine geometry and thermophysical process quantities affecting cavity filling. Variations in embossing tool geometry and polymer film thickness during viscous flow distinguish different flow driving mechanisms. Three parameters can predict polymer deformation mode: cavity width to polymer thickness ratio, polymer supply ratio, and Capillary number. The ratio of cavity width to initial polymer film thickness determines vertically or laterally dominant deformation. The ratio of indenter width to residual film thickness measures polymer supply beneath the indenter which determines Stokes or squeeze flow. The local geometry ratios can predict a fill time based on laminar flow between plates, Stokes flow, or squeeze flow. Characteristic NIL capillary number based on geometry-dependent fill time distinguishes between capillary or viscous driven flows. The three parameters predict filling modes observed in published studies of NIL deformation over nanometer to millimeter length scales. The work seeks to establish process design rules for NIL and to provide tools for the rational design of NIL master templates, resist polymers, and process parameters.

  3. Integration of a 2D Periodic Nanopattern Into Thin Film Polycrystalline Silicon Solar Cells by Nanoimprint Lithography

    E-Print Network [OSTI]

    Abdo, Islam; Deckers, Jan; Depauw, Valérie; Tous, Loic; Van Gestel, Dries; Guindi, Rafik; Gordon, Ivan; Daif, Ounsi El

    2015-01-01

    The integration of two-dimensional (2D) periodic nanopattern defined by nanoimprint lithography and dry etching into aluminum induced crystallization (AIC) based polycrystalline silicon (Poly-Si) thin film solar cells is investigated experimentally. Compared to the unpatterned cell an increase of 6% in the light absorption has been achieved thanks to the nanopattern which, in turn, increased the short circuit current from 20.6 mA/cm2 to 23.8 mA/cm2. The efficiency, on the other hand, has limitedly increased from 6.4% to 6.7%. We show using the transfer length method (TLM) that the surface topography modification caused by the nanopattern has increased the sheet resistance of the antireflection coating (ARC) layer as well as the contact resistance between the ARC layer and the emitter front contacts. This, in turn, resulted in increased series resistance of the nanopatterned cell which has translated into a decreased fill factor, explaining the limited increase in efficiency.

  4. Cloud Detection with MODIS, Part I: Improvements in the MODIS Cloud Mask for Collection 5 *Richard A. Frey, Steven A. Ackerman, Yinghui Liu, Kathleen I. Strabala, Hong Zhang,

    E-Print Network [OSTI]

    Sheridan, Jennifer

    Cloud Detection with MODIS, Part I: Improvements in the MODIS Cloud Mask for Collection 5 *Richard.frey@ssec.wisc.edu August 2007 #12;ABSTRACT Significant improvements have been made to the MODIS cloud mask (MOD35 and MYD35 to the 3.9-12 m and 11-12 m cloud tests. More non-MODIS ancillary input data has been added. Land and sea

  5. Laser plasma formation assisted by ultraviolet pre-ionization

    SciTech Connect (OSTI)

    Yalin, Azer P., E-mail: ayalin@engr.colostate.edu; Dumitrache, Ciprian [Department of Mechanical Engineering, Colorado State University, Fort Collins, Colorado 80523 (United States); Wilvert, Nick [Sandia Laboratory, Albuquerque, New Mexico 87123 (United States); Joshi, Sachin [Cummins Inc., Columbus, Indiana 47201 (United States); Shneider, Mikhail N. [Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544 (United States)

    2014-10-15

    We present experimental and modeling studies of air pre-ionization using ultraviolet (UV) laser pulses and its effect on laser breakdown of an overlapped near-infrared (NIR) pulse. Experimental studies are conducted with a 266?nm beam (fourth harmonic of Nd:YAG) for UV pre-ionization and an overlapped 1064?nm NIR beam (fundamental of Nd:YAG), both having pulse duration of ?10?ns. Results show that the UV beam produces a pre-ionized volume which assists in breakdown of the NIR beam, leading to reduction in NIR breakdown threshold by factor of >2. Numerical modeling is performed to examine the ionization and breakdown of both beams. The modeled breakdown threshold of the NIR, including assist by pre-ionization, is in reasonable agreement with the experimental results.

  6. Paper II: Calibration of the Swift ultraviolet/optical telescope

    E-Print Network [OSTI]

    Breeveld, A A; Hoversten, E A; Koch, S; Landsman, W; Marshall, F E; Page, M J; Poole, T S; Roming, P; Smith, P J; Still, M; Yershov, V; Blustin, A J; Brown, P J; Gronwall, C; Holland, S T; Kuin, N P M; McGowan, K; Rosen, S; Boyd, P; Broos, P; Carter, M; Chester, M M; Hancock, B; Huckle, H; Immler, S; Ivanushkina, M; Kennedy, T; Mason, K O; Morgan, A N; Oates, S; de Pasquale, M; Schady, P; Siegel, M; Berk, D Vanden

    2010-01-01

    The Ultraviolet/Optical Telescope (UVOT) is one of three instruments onboard the Swift observatory. The photometric calibration has been published, and this paper follows up with details on other aspects of the calibration including a measurement of the point spread function with an assessment of the orbital variation and the effect on photometry. A correction for large scale variations in sensitivity over the field of view is described, as well as a model of the coincidence loss which is used to assess the coincidence correction in extended regions. We have provided a correction for the detector distortion and measured the resulting internal astrometric accuracy of the UVOT, also giving the absolute accuracy with respect to the International Celestial Reference System. We have compiled statistics on the background count rates, and discuss the sources of the background, including instrumental scattered light. In each case we describe any impact on UVOT measurements, whether any correction is applied in the st...

  7. Strong Ultraviolet Pulse From a Newborn Type Ia Supernova

    E-Print Network [OSTI]

    Cao, Yi; Howell, D Andrew; Gal-Yam, Avishay; Kasliwal, Mansi M; Valenti, Stefano; Johansson, J; Amanullah, R; Goobar, A; Sollerman, J; Taddia, F; Horesh, Assaf; Sagiv, Ilan; Cenko, S Bradley; Nugent, Peter E; Arcavi, Iair; Surace, Jason; Wo?niak, P R; Moody, Daniela I; Rebbapragada, Umaa D; Bue, Brian D; Gehrels, Neil

    2015-01-01

    Type Ia supernovae are destructive explosions of carbon oxygen white dwarfs. Although they are used empirically to measure cosmological distances, the nature of their progenitors remains mysterious, One of the leading progenitor models, called the single degenerate channel, hypothesizes that a white dwarf accretes matter from a companion star and the resulting increase in its central pressure and temperature ignites thermonuclear explosion. Here we report observations of strong but declining ultraviolet emission from a Type Ia supernova within four days of its explosion. This emission is consistent with theoretical expectations of collision between material ejected by the supernova and a companion star, and therefore provides evidence that some Type Ia supernovae arise from the single degenerate channel.

  8. Broadband extreme ultraviolet probing of transient gratings in vanadium dioxide

    SciTech Connect (OSTI)

    Sistrunk, Emily [SLAC National Acceleraor Laboratory, Menlo Park, CA (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Grilj, Jakob [SLAC National Acceleraor Laboratory, Menlo Park, CA (United States); Ecole Polytechnique Federal de Lausanne (Switzerland); Jeong, Jaewoo [IBM Almaden Research Center, San Jose, CA (United States); Samant, Mahesh G. [IBM Almaden Research Center, San Jose, CA (United States); Gray, Alexander X. [SLAC National Acceleraor Laboratory, Menlo Park, CA (United States); Temple Univ. Philadelphia, PA (United States); Dürr, Hermann A. [SLAC National Acceleraor Laboratory, Menlo Park, CA (United States); Parkin, Stuart S. P. [IBM Almaden Research Center, San Jose, CA (United States); Max Planck Inst. of Microstructure Physics, Halle (Germany); Gühr, Markus [SLAC National Acceleraor Laboratory, Menlo Park, CA (United States)

    2015-01-01

    Nonlinear spectroscopy in the extreme ultraviolet (EUV) and soft x-ray spectral range offers the opportunity for element selective probing of ultrafast dynamics using core-valence transitions (Mukamel et al., Acc. Chem. Res. 42, 553 (2009)). We demonstrate a step on this path showing core-valence sensitivity in transient grating spectroscopy with EUV probing. We study the optically induced insulator-to-metal transition (IMT) of a VO? film with EUV diffraction from the optically excited sample. The VO? exhibits a change in the 3p-3d resonance of V accompanied by an acoustic response. Due to the broadband probing we are able to separate the two features.

  9. An Internet Database of Ultraviolet Lightcurves for Seyfert Galaxies

    E-Print Network [OSTI]

    Jay P. Dunn; Brian Jackson; Rajesh P. Deo; Chris Farrington; Varendra Das; D. Michael Crenshaw

    2006-03-29

    Using the Multimission Archives at Space Telescope (MAST), we have extracted spectra and determined continuum light curves for 175 Seyfert Galaxies that have been observed with the International Ultraviolet Explorer (IUE) and the Faint Object Spectrograph (FOS) on the Hubble Space Telescope (HST). To obtain the light curves as a function of Julian Date, we used fix bins in the object's rest frame, and measured small regions (between 30 and 60 Angstroms) of each spectrum's continuum flux in the range 1150 Angstroms to 3200 Angstroms. We provide access to the UV light curves and other basic information about the observations in tabular and graphical form via the Internet at http://www.chara.gsu.edu/PEGA/IUE/.

  10. THE EXTREME-ULTRAVIOLET EMISSION FROM SUN-GRAZING COMETS

    SciTech Connect (OSTI)

    Bryans, P.; Pesnell, W. D.

    2012-11-20

    The Atmospheric Imaging Assembly (AIA) on the Solar Dynamics Observatory has observed two Sun-grazing comets as they passed through the solar atmosphere. Both passages resulted in a measurable enhancement of extreme-ultraviolet (EUV) radiance in several of the AIA bandpasses. We explain this EUV emission by considering the evolution of the cometary atmosphere as it interacts with the ambient solar atmosphere. Molecules in the comet rapidly sublimate as it approaches the Sun. They are then photodissociated by the solar radiation field to create atomic species. Subsequent ionization of these atoms produces a higher abundance of ions than normally present in the corona and results in EUV emission in the wavelength ranges of the AIA telescope passbands.

  11. Ultraviolet Resonant Raman Enhancements in the Detection of Explosives

    SciTech Connect (OSTI)

    Short, B J; Carter, J C; Gunter, D; Hovland, P; Jagode, H; Karavanic, K; Marin, G; Mellor-Crummey, J; Moore, S; Norris, B; Oliker, L; Olschanowsky, C; Roth, P C; Schulz, M; Shende, S; Snavely, A; Spear, W

    2009-06-03

    Raman-based spectroscopy is potentially militarily useful for standoff detection of high explosives. Normal (non-resonance) and resonance Raman spectroscopies are both light scattering techniques that use a laser to measure the vibrational spectrum of a sample. In resonance Raman, the laser is tuned to match the wavelength of a strong electronic absorbance in the molecule of interest, whereas, in normal Raman the laser is not tuned to any strong electronic absorbance bands. The selection of appropriate excitation wavelengths in resonance Raman can result in a dramatic increase in the Raman scattering efficiency of select band(s) associated with the electronic transition. Other than the excitation wavelength, however, resonance Raman is performed experimentally the same as normal Raman. In these studies, normal and resonance Raman spectral signatures of select solid high explosive (HE) samples and explosive precursors were collected at 785 nm, 244 nm and 229 nm. Solutions of PETN, TNT, and explosive precursors (DNT & PNT) in acetonitrile solvent as an internal Raman standard were quantitatively evaluated using ultraviolet resonance Raman (UVRR) microscopy and normal Raman spectroscopy as a function of power and select excitation wavelengths. Use of an internal standard allowed resonance enhancements to be estimated at 229 nm and 244 nm. Investigations demonstrated that UVRR provided {approx}2000-fold enhancement at 244 nm and {approx}800-fold improvement at 229 nm while PETN showed a maximum of {approx}25-fold at 244 nm and {approx}190-fold enhancement at 229 nm solely from resonance effects when compared to normal Raman measurements. In addition to the observed resonance enhancements, additional Raman signal enhancements are obtained with ultraviolet excitation (i.e., Raman scattering scales as !4 for measurements based on scattered photons). A model, based partly on the resonance Raman enhancement results for HE solutions, is presented for estimating Raman enhancements for solid HE samples.

  12. Reflective optical imaging systems with balanced distortion

    DOE Patents [OSTI]

    Hudyma, Russell M. (San Ramon, CA)

    2001-01-01

    Optical systems compatible with extreme ultraviolet radiation comprising four reflective elements for projecting a mask image onto a substrate are described. The four optical elements comprise, in order from object to image, convex, concave, convex and concave mirrors. The optical systems are particularly suited for step and scan lithography methods. The invention enables the use of larger slit dimensions associated with ring field scanning optics, improves wafer throughput, and allows higher semiconductor device density. The inventive optical systems are characterized by reduced dynamic distortion because the static distortion is balanced across the slit width.

  13. Method and apparatus for producing durationally short ultraviolet or x-ray laser pulses

    DOE Patents [OSTI]

    MacGowan, B.J.; Matthews, D.L.; Trebes, J.E.

    1987-05-05

    A method and apparatus is disclosed for producing ultraviolet or x- ray laser pulses of short duration. An ultraviolet or x-ray laser pulse of long duration is progressively refracted, across the surface of an opaque barrier, by a streaming plasma that is produced by illuminating a solid target with a pulse of conventional line focused high power laser radiation. The short pulse of ultraviolet or x-ray laser radiation, which may be amplified to high power, is separated out by passage through a slit aperture in the opaque barrier.

  14. Passive intrinsic-linewidth narrowing of ultraviolet extended-cavity diode laser by weak optical feedback

    E-Print Network [OSTI]

    Samutpraphoot, Polnop

    We present a simple method for narrowing the intrinsic Lorentzian linewidth of a commercial ultraviolet grating extended-cavity diode laser (TOPTICA DL Pro) using weak optical feedback from a long external cavity. We achieve ...

  15. Home ultraviolet light therapy for psoriasis: Why patients choose other options

    E-Print Network [OSTI]

    Dothard, Emily H.; Sandoval, Laura F.; Yentzer, Brad A.; Feldman, Steven R.

    2015-01-01

    of psoriasis [5]. A home light unit may therefore be theyou/your child for a home UV light device. I just need aboutFebruary 2015 Commentary Home ultraviolet light therapy for

  16. NEAR-ULTRAVIOLET PROPERTIES OF A LARGE SAMPLE OF TYPE Ia SUPERNOVAE...

    Office of Scientific and Technical Information (OSTI)

    SUPERNOVAE AS OBSERVED WITH THE Swift UVOT We present ultraviolet (UV) and optical photometry of 26 Type Ia supernovae (SNe Ia) observed from 2005 March to 2008 March with the...

  17. The far-ultraviolet UPS and downs of Alpha Centauri (Journal...

    Office of Scientific and Technical Information (OSTI)

    Centauri have yielded a detailed time history of far-ultraviolet (FUV: 1150-1700 ) emissions of the solarlike primary (A: G2 V) and the cooler but more active secondary (B: K1...

  18. MATING SYSTEM EVOLUTION, PLANT-POLLINATOR INTERACTIONS, AND FLORAL ULTRAVIOLET PATTERNING IN MIMULUS GUTTATUS

    E-Print Network [OSTI]

    Bodbyl-Roels, Sarah Ann

    2012-08-31

    speciation. In Chapter 4, I document within and among population variation in a cryptic floral trait, ultraviolet (UV) patterning. UV patterning is a visual stimulant for pollinators, but I found it in a selfing Mimulus species, suggesting that UV patterning...

  19. DETECTION OF NEUTRAL PHOSPHORUS IN THE NEAR-ULTRAVIOLET SPECTRA OF LATE-TYPE STARS

    E-Print Network [OSTI]

    Roederer, Ian U.

    We report the detection of several absorption lines of neutral phosphorus (P, Z = 15) in archival near-ultraviolet spectra obtained with the Space Telescope Imaging Spectrograph on board the Hubble Space Telescope. We ...

  20. Microbial Reduction on Eggshell Surfaces by the use of Hydrogen Peroxide and Ultraviolet Light 

    E-Print Network [OSTI]

    Gottselig, Steven Michael

    2011-10-21

    O2) in combination with ultraviolet light (UV) as an egg sanitization process on eggshell surfaces was studied. Preliminary experiments were conducted to develop an optimized methodology for eggshell disinfection that will be an effective...

  1. The development and application of a diode-laser-based ultraviolet absorption sensor for nitric oxide 

    E-Print Network [OSTI]

    Anderson, Thomas Nathan

    2004-09-30

    This thesis describes the development of a new type of sensor for nitric oxide (NO) that can be used in a variety of combustion diagnostics and control applications. The sensor utilizes the absorption of ultraviolet (UV) ...

  2. Ultraviolet light absorbers having two different chromophors in the same molecule

    DOE Patents [OSTI]

    Vogl, O.; Li, S.

    1983-10-06

    This invention relates to novel ultraviolet light absorbers having two chromophors in the same molecule, and more particularly to benzotriazole substituted dihydroxybenzophenones and acetophenones. More particularly, this invention relates to 3,5-(di(2H-benzotriazole-2-yl))-2,4-dihydroxybenzophenone and 3,5-(di(2H-benzotriazole-2-yl))-2,4-dihydroxyacetophenone which are particularly useful as an ultraviolet light absorbers.

  3. Ultraviolet photodissociation of OCS: Product energy and angular distributions

    SciTech Connect (OSTI)

    McBane, G. C. [Department of Chemistry, Grand Valley State University, Allendale, Michigan 49401 (United States); Schmidt, J. A.; Johnson, M. S. [Department of Chemistry, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen O (Denmark); Schinke, R. [Max-Planck-Institut fuer Dynamik und Selbstorganisation (MPIDS), D-37077 Goettingen (Germany)

    2013-03-07

    The ultraviolet photodissociation of carbonyl sulfide (OCS) was studied using three-dimensional potential energy surfaces and both quantum mechanical dynamics calculations and classical trajectory calculations including surface hopping. The transition dipole moment functions used in an earlier study [J. A. Schmidt, M. S. Johnson, G. C. McBane, and R. Schinke, J. Chem. Phys. 137, 054313 (2012)] were improved with more extensive treatment of excited electronic states. The new functions indicate a much larger contribution from the 1 {sup 1}A{sup Double-Prime} state ({sup 1}{Sigma}{sup -} in linear OCS) than was found in the previous work. The new transition dipole functions yield absorption spectra that agree with experimental data just as well as the earlier ones. The previously reported potential energy surfaces were also empirically modified in the region far from linearity. The resulting product state distributions P{sub v,j}, angular anisotropy parameters {beta}(j), and carbon monoxide rotational alignment parameters A{sub 0}{sup (2)}(j) agree reasonably well with the experimental results, while those computed from the earlier transition dipole and potential energy functions do not. The higher-j peak in the bimodal rotational distribution is shown to arise from nonadiabatic transitions from state 2 {sup 1}A{sup Prime} to the OCS ground state late in the dissociation.

  4. High photon flux table-top coherent extreme ultraviolet source

    E-Print Network [OSTI]

    Hädrich, Steffen; Rothhardt, Jan; Krebs, Manuel; Hoffmann, Armin; Pronin, Oleg; Pervak, Vladimir; Limpert, Jens; Tünnermann, Andreas

    2014-01-01

    High harmonic generation (HHG) enables extreme ultraviolet radiation with table-top setups. Its exceptional properties, such as coherence and (sub)-femtosecond pulse durations, have led to a diversity of applications. Some of these require a high photon flux and megahertz repetition rates, e.g. to avoid space charge effects in photoelectron spectroscopy. To date this has only been achieved with enhancement cavities. Here, we establish a novel route towards powerful HHG sources. By achieving phase-matched HHG of a megahertz fibre laser we generate a broad plateau (25 eV - 40 eV) of strong harmonics, each containing more than $10^{12}$ photons/s, which constitutes an increase by more than one order of magnitude in that wavelength range. The strongest harmonic (H25, 30 eV) has an average power of 143 $\\mu$W ($3\\cdot10^{13}$ photons/s). This concept will greatly advance and facilitate applications in photoelectron or coincidence spectroscopy, coherent diffractive imaging or (multidimensional) surface science.

  5. The Swift-UVOT ultraviolet and visible grism calibration

    E-Print Network [OSTI]

    Kuin, N P M; Breeveld, A A; Page, M J; James, C; Lamoureux, H; Mehdipour, M; Still, M; Yershov, V; Brown, P J; Carter, M; Mason, K O; Kennedy, T; Marshall, F; Roming, P W A; Siegel, M; Oates, S; Smith, P J; De Pasquale, M

    2015-01-01

    We present the calibration of the Swift UVOT grisms, of which there are two, providing low-resolution field spectroscopy in the ultraviolet and optical bands respectively. The UV grism covers the range 1700-5000 Angstrom with a spectral resolution of 75 at 2600 Angstrom for source magnitudes of u=10-16 mag, while the visible grism covers the range 2850-6600 Angstrom with a spectral resolution of 100 at 4000 Angstrom for source magnitudes of b=12-17 mag. This calibration extends over all detector positions, for all modes used during operations. The wavelength accuracy (1-sigma) is 9 Angstrom in the UV grism clocked mode, 17 Angstrom in the UV grism nominal mode and 22 Angstrom in the visible grism. The range below 2740 Angstrom in the UV grism and 5200 Angstrom in the visible grism never suffers from overlapping by higher spectral orders. The flux calibration of the grisms includes a correction we developed for coincidence loss in the detector. The error in the coincidence loss correction is less than 20%. The...

  6. Xe capillary target for laser-plasma extreme ultraviolet source

    SciTech Connect (OSTI)

    Inoue, Takahiro; Okino, Hideyasu; Nica, Petru Edward; Amano, Sho; Miyamoto, Shuji; Mochizuki, Takayasu

    2007-10-15

    A cryogenic Xe jet system with an annular nozzle has been developed in order to continuously fast supply a Xe capillary target for generating a laser-plasma extreme ultraviolet (EUV) source. The cooling power of the system was evaluated to be 54 W, and the temperature stability was {+-}0.5 K at a cooling temperature of about 180 K. We investigated experimentally the influence of pressure loss inside an annular nozzle on target formation by shortening the nozzle length. Spraying caused by cavitation was mostly suppressed by mitigating the pressure loss, and a focused jet was formed. Around a liquid-solid boundary, a solid-Xe capillary target (100/70 {mu}m {phi}) was formed with a velocity of {<=}0.01 m/s. Laser-plasma EUV generation was tested by focusing a Nd:YAG laser beam on the target. The results suggested that an even thinner-walled capillary target is required to realize the inertial confinement effect.

  7. Graphene defect formation by extreme ultraviolet generated photoelectrons

    SciTech Connect (OSTI)

    Gao, A., E-mail: a.gao@utwente.nl; Lee, C. J.; Bijkerk, F. [FOM-Dutch Institute for Fundamental Energy Research, Edisonbaan 14, 3439 MN Nieuwegein, The Netherlands and XUV Optics Group, MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)

    2014-08-07

    We have studied the effect of photoelectrons on defect formation in graphene during extreme ultraviolet (EUV) irradiation. Assuming the major role of these low energy electrons, we have mimicked the process by using low energy primary electrons. Graphene is irradiated by an electron beam with energy lower than 80?eV. After e-beam irradiation, it is found that the D peak, I(D), appears in the Raman spectrum, indicating defect formation in graphene. The evolution of I(D)/I(G) follows the amorphization trajectory with increasing irradiation dose, indicating that graphene goes through a transformation from microcrystalline to nanocrystalline and then further to amorphous carbon. Further, irradiation of graphene with increased water partial pressure does not significantly change the Raman spectra, which suggests that, in the extremely low energy range, e-beam induced chemical reactions between residual water and graphene are not the dominant mechanism driving defect formation in graphene. Single layer graphene, partially suspended over holes was irradiated with EUV radiation. By comparing with the Raman results from e-beam irradiation, it is concluded that the photoelectrons, especially those from the valence band, contribute to defect formation in graphene during irradiation.

  8. AN EXTREME-ULTRAVIOLET WAVE ASSOCIATED WITH A SURGE

    SciTech Connect (OSTI)

    Zheng, Ruisheng; Jiang, Yunchun; Yang, Jiayan; Bi, Yi; Hong, Junchao; Yang, Bo; Yang, Dan

    2013-02-10

    Taking advantage of the high temporal and spatial resolution observations from the Solar Dynamics Observatory, we present an extreme-ultraviolet (EUV) wave associated with a surge on 2010 November 13. Due to the magnetic flux cancelation, some surges formed in the source active region (AR). The strongest surge produced our studied event. The surge was deflected by the nearby loops that connected to another AR, and disrupted the overlying loops that slowly expanded and eventually evolved into a weak coronal mass ejection (CME). The surge was likely associated with the core of the CME. The EUV wave happened after the surge deflected. The wave departed far from the flare center and showed a close location relative to the deflected surge. The wave propagated in a narrow angular extent, mainly in the ejection direction of the surge. The close timing and location relations between the EUV wave and the surge indicate that the wave was closely associated with the CME. The wave had a velocity of 310-350 km s{sup -1}, while the speeds of the surge and the expanding loops were about 130 and 150 km s{sup -1}, respectively. All of the results suggest that the EUV wave was a fast-mode wave and was most likely triggered by the weak CME.

  9. Probing the Role of Carbon in the Interstellar Ultraviolet Extinction

    E-Print Network [OSTI]

    Mishra, Ajay

    2015-01-01

    We probe the role of carbon in the ultraviolet (UV) extinction by examining the relations between the amount of carbon required to be locked up in dust [C/H]_dust with the 2175 Angstrom extinction bump and the far-UV extinction rise, based on an analysis of the extinction curves along 16 Galactic sightlines for which the gas-phase carbon abundance is known and the 2175 Angstrom extinction bump exhibits variable strengths and widths. We derive [C/H]_dust from the Kramers-Kronig relation which relates the wavelength-integrated extinction to the total dust volume. This approach is less model-dependent since it does not require the knowledge of the detailed optical properties and size distribution of the dust. We also derive [C/H]_dust from fitting the observed UV/optical/near-infrared extinction with a mixture of amorphous silicate and graphite. We find that the carbon depletion [C/H]_dust tends to correlate with the strength of the 2175 Angstrom bump, while the abundance of silicon depleted in dust shows no cor...

  10. Enhanced Software for Displaying Orthographic, Stereographic, Gnomic and Cylindrical Projections of the Sunpath Diagram and Shading Mask Protractor 

    E-Print Network [OSTI]

    Oh, K. W.; Haberl, J. S.; Degelman, L. O.

    2000-01-01

    -path diagram and shading mask protractor are well known graphic formats that have traditionally been used by architects and engineers to analyze whether or not a solar shading device will block direct sunlight on a given point in the plane of an exterior... (Schnieders et al. 1997), AWNSHADE (McCluney 1995), SOLAR-2 (Sheu 1986), SUNPATH (McCluney 1995), and SUNSPEC (McCluney 1995) programs. OPAQUE (Abouella and Milne 1990), developed by the Department of Architecture at UCLA, draws a detailed wall or roof...

  11. Ultrasonic generator and detector using an optical mask having a grating for launching a plurality of spatially distributed, time varying strain pulses in a sample

    DOE Patents [OSTI]

    Maris, Humphrey J. (Barrington, RI)

    2002-01-01

    A method and a system are disclosed for determining at least one characteristic of a sample that contains a substrate and at least one film disposed on or over a surface of the substrate. The method includes a first step of placing a mask over a free surface of the at least one film, where the mask has a top surface and a bottom surface that is placed adjacent to the free surface of the film. The bottom surface of the mask has formed therein or thereon a plurality of features for forming at least one grating. A next step directs optical pump pulses through the mask to the free surface of the film, where individual ones of the pump pulses are followed by at least one optical probe pulse. The pump pulses are spatially distributed by the grating for launching a plurality of spatially distributed, time varying strain pulses within the film, which cause a detectable change in optical constants of the film. A next step detects a reflected or a transmitted portion of the probe pulses, which are also spatially distributed by the grating. A next step measures a change in at least one characteristic of at least one of reflected or transmitted probe pulses due to the change in optical constants, and a further step determines the at least one characteristic of the sample from the measured change in the at least one characteristic of the probe pulses. An optical mask is also disclosed herein, and forms a part of these teachings.

  12. Ultrasonic generator and detector using an optical mask having a grating for launching a plurality of spatially distributed, time varying strain pulses in a sample

    DOE Patents [OSTI]

    Maris, Humphrey J. (Barrington, RI)

    2003-01-01

    A method and a system are disclosed for determining at least one characteristic of a sample that contains a substrate and at least one film disposed on or over a surface of the substrate. The method includes a first step of placing a mask over a free surface of the at least one film, where the mask has a top surface and a bottom surface that is placed adjacent to the free surface of the film. The bottom surface of the mask has formed therein or thereon a plurality of features for forming at least one grating. A next step directs optical pump pulses through the mask to the free surface of the film, where individual ones of the pump pulses are followed by at least one optical probe pulse. The pump pulses are spatially distributed by the grating for launching a plurality of spatially distributed, time varying strain pulses within the film, which cause a detectable change in optical constants of the film. A next step detects a reflected or a transmitted portion of the probe pulses, which are also spatially distributed by the grating. A next step measures a change in at least one characteristic of at least one of reflected or transmitted probe pulses due to the change in optical constants, and a further step determines the at least one characteristic of the sample from the measured change in the at least one characteristic of the probe pulses. An optical mask is also disclosed herein, and forms a part of these teachings.

  13. Nanofabrication of sharp diamond tips by e-beam lithography and inductively coupled plasma reactive ion etching.

    SciTech Connect (OSTI)

    Moldovan, N.; Divan, R.; Zeng, H.; Carlisle, J. A.; Advanced Diamond Tech.

    2009-12-07

    Ultrasharp diamond tips make excellent atomic force microscopy probes, field emitters, and abrasive articles due to diamond's outstanding physical properties, i.e., hardness, low friction coefficient, low work function, and toughness. Sharp diamond tips are currently fabricated as individual tips or arrays by three principal methods: (1) focused ion beam milling and gluing onto a cantilever of individual diamond tips, (2) coating silicon tips with diamond films, or (3) molding diamond into grooves etched in a sacrificial substrate, bonding the sacrificial substrate to another substrate or electrodepositing of a handling chip, followed by dissolution of the sacrificial substrate. The first method is tedious and serial in nature but does produce very sharp tips, the second method results in tips whose radius is limited by the thickness of the diamond coating, while the third method involves a costly bonding and release process and difficulties in thoroughly filling the high aspect ratio apex of molding grooves with diamond at the nanoscale. To overcome the difficulties with these existing methods, this article reports on the feasibility of the fabrication of sharp diamond tips by direct etching of ultrananocrystalline diamond (UNCD{reg_sign}) as a starting and structural material. The UNCD is reactive ion etched using a cap-precursor-mask scheme. An optimized etching recipe demonstrates the formation of ultrasharp diamond tips ({approx} 10 nm tip radius) with etch rates of 650 nm/min.

  14. The GALEX Ultraviolet Virgo Cluster Survey (GUViCS). V. Ultraviolet diffuse emission and cirrus properties in the Virgo cluster direction

    E-Print Network [OSTI]

    Boissier, S; Voyer, E; Bianchi, S; Pappalardo, C; Guhathakurta, P; Heinis, S; Cortese, L; Duc, P -A; Cuillandre, J -C; Davies, J I; Smith, M W L

    2015-01-01

    CONTEXT: The Virgo direction has been observed at many wavelengths in the recent years, in particular in the ultraviolet with GALEX. The far ultraviolet (FUV) diffuse light detected by GALEX bears interesting information on the large scale distribution of Galactic dust, owing to the GALEX FUV band sensitivity and resolution. AIMS: We aim to characterise the ultraviolet large scale distribution of diffuse emission in the Virgo direction. A map of this emission may become useful for various studies by identifying regions where dust affects observations by either scattering light or absorbing radiation. METHODS: We construct mosaics of the FUV and near ultraviolet diffuse emission over a large sky region (RA 12 to 13 hours, DEC 0 to 20 degrees) surrounding the Virgo cluster, using all the GALEX available data in the area. We test for the first time the utilisation of the FUV diffuse light as a Galactic extinction E(B-V) tracer. RESULTS: The FUV diffuse light scattered on cirrus reveals details in their geometry....

  15. Maskless nanolithography and imaging with diffractive optical arrays

    E-Print Network [OSTI]

    Gil, Darío, 1975-

    2003-01-01

    Semiconductor lithography is at a crossroads. With mask set costs in excess of one million dollars, long mask turn-around times, and tools that are characterized by their inflexibility and skyrocketing costs, there is a ...

  16. Nanodiamond dust and the far-ultraviolet quasar break

    E-Print Network [OSTI]

    L. Binette; G. Magris C.; Y. Krongold; C. Morisset; S. Haro-Corzo; J. A. de Diego; H. Mutschke; A. C. Andersen

    2005-05-29

    We explore the possibility that the steepening observed shortward of 1000A in the energy distribution of quasars may result from absorption by dust, being either intrinsic to the quasar environment or intergalactic. We find that a dust extinction curve consisting of nanodiamonds, composed of terrestrial cubic diamonds or with surface impurities as found in carbonaceous chondrite meteorites, such as Allende, is successful in reproducing the sharp break observed. The intergalactic dust model is partially successful in explaining the shape of the composite energy distribution, but must be discarded in the end, as the amount of crystalline dust required is unreasonable and would imply an improbable fine tuning among the dust formation processes. The alternative intrinsic dust model requires a mixture of both cubic diamonds and Allende nanodiamonds and provide a better fit of the UV break. The gas column densities implied are of the order 10^{20} cm^{-2} assuming solar metallicity for carbon and full depletion of carbon into dust. The absorption only occurs in the ultraviolet and is totally negligible in the visible. The minimum dust mass required is of the order ~ 0.003 r_{pc}^{2}M_o, where r_{pc} is the distance in parsec between the dust screen and the continuum source. The intrinsic dust model reproduces the flux {\\it rise} observed around 660A in key quasar spectra quite well. We present indirect evidence of a shallow continuum break near 670A (18.5 eV), which would be intrinsic to the quasar continuum.

  17. The Near-Ultraviolet Continuum of Late-Type Stars

    E-Print Network [OSTI]

    Carlos Allende Prieto; David L. Lambert

    2000-01-28

    Analyses of the near-ultraviolet continuum of late-type stars have led to controversial results regarding the performance of state-of-the-art model atmospheres. The release of the homogeneous IUE final archive and the availability of the high-accuracy Hipparcos parallaxes provide an opportunity to revisit this issue, as accurate stellar distances make it possible to compare observed absolute fluxes with the predictions of model atmospheres. The near-UV continuum is highly sensitive to Teff and [Fe/H], and once the gravity is constrained from the parallax, these parameters may be derived from the analysis of low-dispersion "long-wavelength" (2000-3000 A) IUE spectra for stars previously studied by Alonso et al. (1996; A&AS 117, 227) using the Infrared Flux Method (IRFM). A second comparison is carried out against the stars spectroscopically investigated by Gratton et al. (1996; A&A 314, 191). It is shown that there is a good agreement between Teffs obtained from the IRFM and from the near-UV continuum, and a remarkable correspondence between observed and synthetic fluxes for stars with 4000 <= Teff <= 6000 K of any metallicity and gravity. These facts suggest that model atmospheres provide an adequate description of the near-UV continuum forming region and that the opacities involved are essentially understood. For cooler stars, the results of the IRFM are no longer reliable, as shown by Alonso et al., but the discrepancy noticed for stars hotter than 6000 K may reflect problems in the model atmospheres and/or the opacities at these higher temperatures.

  18. SU-E-T-603: Analysis of Optical Tracked Head Inter-Fraction Movements Within Masks to Access Intracranial Immobilization Techniques in Proton Therapy

    SciTech Connect (OSTI)

    Hsi, W; Zeidan, O

    2014-06-01

    Purpose: We present a quantitative methodology utilizing an optical tracking system for monitoring head inter-fraction movements within brain masks to assess the effectiveness of two intracranial immobilization techniques. Methods and Materials: A 3-point-tracking method was developed to measure the mask location for a treatment field at each fraction. Measured displacement of mask location to its location at first fraction is equivalent to the head movement within the mask. Head movements for each of treatment fields were measured over about 10 fractions at each patient for seven patients; five treated in supine and two treated in prone. The Q-fix Base-of-Skull head frame was used in supine while the CIVCO uni-frame baseplate was used in prone. Displacements of recoded couch position of each field post imaging at each fraction were extracted for those seven patients. Standard deviation (S.D.) of head movements and couch displacements was scored for statistical analysis. Results: The accuracy of 3PtTrack method was within 1.0 mm by phantom measurements. Patterns of head movement and couch displacement were similar for patients treated in either supine or prone. In superior-inferior direction, mean value of scored standard deviations over seven patients were 1.6 mm and 3.4 mm for the head movement and the couch displacement, respectively. The result indicated that the head movement combined with a loose fixation between the mask-to-head frame results large couch displacements for each patient, and also large variation between patients. However, the head movement is the main cause for the couch displacement with similar magnitude of around 1.0 mm in anterior-posterior and lateral directions. Conclusions: Optical-tracking methodology independently quantifying head movements could improve immobilization devices by correctly acting on causes for head motions within mask. A confidence in the quality of intracranial immobilization techniques could be more efficient by eliminating the need for frequent imaging.

  19. Therapy-resistant psoriasis treated with alefacept and subsequent narrow band ultraviolet B phototherapy with total clearing of psoriasis

    E-Print Network [OSTI]

    Scheinfeld, Noah

    2005-01-01

    and ultraviolet B light for treatment of psoriasis.Presented at: International Psoriasis Symposium. June 18-22;B light for treatment of psoriasis. Poster Presented at:

  20. Solvent Immersion Imprint Lithography

    SciTech Connect (OSTI)

    Vasdekis, Andreas E.; Wilkins, Michael J.; Grate, Jay W.; Kelly, Ryan T.; Konopka, Allan; Xantheas, Sotiris S.; Chang, M. T.

    2014-06-21

    The mechanism of polymer disolution was explored for polymer microsystem prototyping, including microfluidics and optofluidics. Polymer films are immersed in a solvent, imprinted and finally brought into contact with a non-modified surface to permanently bond. The underlying polymer-solvent interactions were experimentally and theoretically investigated, and enabled rapid polymer microsystem prototyping. During imprinting, small molecule integration in the molded surfaces was feasible, a principle applied to oxygen sensing. Polystyrene (PS) was employed for microbiological studies at extreme environmental conditions. The thermophile anaerobe Clostridium Thermocellum was grown in PS pore-scale micromodels, revealing a double mean generation lifetime than under ideal culture conditions. Microsystem prototyping through directed polymer dissolution is simple and accessible, while simultaneous patterning, bonding, and surface/volume functionalization are possible in less than one minute.

  1. Lithography Trouble-Shooter

    E-Print Network [OSTI]

    Yoo, S. J. Ben

    , or alternative coating techniques such as spray coating, roller coating, or dip coating are possible work, roller coating, or dip coating are reasonable alternatives for spin coating. Please contact us and Comet-Like Structures After Spin Coating? Possible reasons and work- arounds are listed in the section

  2. Advances in Lithography

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room News Publications Traditional Knowledge KiosksAboutHelp &AdvancedAdvancedExamples

  3. Climatic isotope signals in tree rings masked by air pollution: A case study conducted along the Mont Blanc Tunnel access road (Western Alps, Italy)

    E-Print Network [OSTI]

    Climatic isotope signals in tree rings masked by air pollution: A case study conducted along, Switzerland h i g h l i g h t s air pollution on the climatic signal recorded in the d13 C chronologies. Air pollution loads strongly influence the photosynthetic process.

  4. Surface photoconductivity of organosilicate glass dielectrics induced by vacuum-ultraviolet radiation

    SciTech Connect (OSTI)

    Zheng, H.; Nichols, M. T.; Pei, D.; Shohet, J. L.; Nishi, Y.

    2013-08-14

    The temporary increase in the electrical surface conductivity of low-k organosilicate glass (SiCOH) during exposure to vacuum-ultraviolet radiation (VUV) is investigated. To measure the photoconductivity, patterned “comb structures” are deposited on dielectric films and exposed to synchrotron radiation in the range of 8–25 eV, which is in the energy range of most plasma vacuum-ultraviolet radiation. The change in photo surface conductivity induced by VUV radiation may be beneficial in limiting charging damage of dielectrics by depleting the plasma-deposited charge.

  5. Note: Hollow cathode lamp with integral, high optical efficiency isolation valve: A modular vacuum ultraviolet source

    SciTech Connect (OSTI)

    Sloan Roberts, F.; Anderson, Scott L. [Department of Chemistry, University of Utah, 315 S. 1400 E., Salt Lake City, Utah 84112 (United States)] [Department of Chemistry, University of Utah, 315 S. 1400 E., Salt Lake City, Utah 84112 (United States)

    2013-12-15

    The design and operating conditions of a hollow cathode discharge lamp for the generation of vacuum ultraviolet radiation, suitable for ultrahigh vacuum (UHV) application, are described in detail. The design is easily constructed, and modular, allowing it to be adapted to different experimental requirements. A thin isolation valve is built into one of the differential pumping stages, isolating the discharge section from the UHV section, both for vacuum safety and to allow lamp maintenance without venting the UHV chamber. The lamp has been used both for ultraviolet photoelectron spectroscopy of surfaces and as a “soft” photoionization source for gas-phase mass spectrometry.

  6. Nanofabrication of super-high-aspect-ratio structures in hydrogen silsesquioxane from direct-write e-beam lithography and hot development.

    SciTech Connect (OSTI)

    Ocola, L. E.; Tirumala, V. R.; Center for Nanoscale Materials; NIST

    2008-11-01

    Super-high-aspect-ratio structures (>10) in hydrogen silsesquioxane resist using direct write electron beam lithography at 100 kV and hot development and rinse are reported. Posts of 100 nm in width and 1.2 {micro}m tall have been successfully fabricated without the need of supercritical drying. Hot rinse solution with isopropyl alcohol has been used to reduce surface tension effects during drying. Dose absorption effects have been observed and modeled using known Monte Carlo models. These results indicate that for e-beam exposures of thick negative resists (>1 {micro}m), the bottom of the structures will have less cross-link density and therefore will be less stiff than the top. These results will have impact in the design of high-aspect-ratio structures that can be used in microelectromechanical system devices and high-aspect-ratio Fresnel zone plates.

  7. Floriculture and Greenhouse Crops Utilization of ultraviolet-C (UV-C) irradiation on ornamental plants for disease

    E-Print Network [OSTI]

    Chen, Tsuhan

    Floriculture and Greenhouse Crops Utilization of ultraviolet-C (UV-C) irradiation on ornamental the effects of ultraviolet-C irradiation (UV-C) on commercially-valuable greenhouse ornamental plants UV lamps (Osram HNS OFR) have been suspended in the LIHREC greenhouses over greenhouse benches. Each

  8. Deep-Ultraviolet Resonance Raman Excitation Profiles of NH4NO3, PETN, TNT, HMX, and RDX

    E-Print Network [OSTI]

    Asher, Sanford A.

    Deep-Ultraviolet Resonance Raman Excitation Profiles of NH4NO3, PETN, TNT, HMX, and RDX Manash nitrate (NH4NO3), pentaerythritol tetranitrate (PETN), trinitrotoluene (TNT), nitroamine (HMX. The ultraviolet (UV) resonance Raman/differential Raman cross-sections of NH4NO3, PETN, TNT, HMX, and RDX

  9. Re-evaluation of SO2 release of the 15 June 1991 Pinatubo eruption using ultraviolet and infrared satellite sensors

    E-Print Network [OSTI]

    Rose, William I.

    Re-evaluation of SO2 release of the 15 June 1991 Pinatubo eruption using ultraviolet and infrared Infrared Radiation Sounder/2) sensor, whose data sets have a higher temporal resolution, are also analyzed ultraviolet and infrared satellite sensors, Geochem. Geophys. Geosyst., 5, Q04001, doi:10.1029/ 2003GC000654

  10. Carbon contamination and oxidation of Au surfaces under extreme ultraviolet radiation: An x-ray photoelectron spectroscopy study

    E-Print Network [OSTI]

    Harilal, S. S.

    Carbon contamination and oxidation of Au surfaces under extreme ultraviolet radiation: An x 2012) Extreme ultraviolet (EUV) radiation-induced carbon contamination and oxidation of Au surfaces modification during EUV exposure. XPS analysis showed that total carbon contamination (C 1s peak

  11. Vacuum-ultraviolet ionization spectroscopy of the jet-cooled RNA-base Kyo-Won Choi, Joo-Hee Lee and Sang Kyu Kim*

    E-Print Network [OSTI]

    Kim, Sang Kyu

    Vacuum-ultraviolet ionization spectroscopy of the jet-cooled RNA-base uracil Kyo-Won Choi, Joo accurately and precisely determined for the first time using a vacuum-ultraviolet mass-analyzed threshold be used for the clarification of the latter in this report. Here, we employ a vacuum-ultraviolet mass

  12. Nanowire Ultraviolet Photodetectors and Optical By Hannes Kind, Haoquan Yan, Benjamin Messer,

    E-Print Network [OSTI]

    Yang, Peidong

    of a Nd:YAG laser was used as the UV light source. Neutral density filters were used to change the incident UV light power. It was found that the photoresponse (Ipc) can be expressed by a simple power law is extremely sensitive to ultraviolet light exposure. The light-induced conductivity increase allows us

  13. Lubricating bacteria model for the growth of bacterial colonies exposed to ultraviolet radiation

    SciTech Connect (OSTI)

    Zhang Shengli; Zhang Lei; Liang Run; Zhang Erhu; Liu Yachao; Zhao Shumin

    2005-11-01

    In this paper, we study the morphological transition of bacterial colonies exposed to ultraviolet radiation by modifying the bacteria model proposed by Delprato et al. Our model considers four factors: the lubricant fluid generated by bacterial colonies, a chemotaxis initiated by the ultraviolet radiation, the intensity of the ultraviolet radiation, and the bacteria's two-stage destruction rate with given radiation intensities. Using this modified model, we simulate the ringlike pattern formation of the bacterial colony exposed to uniform ultraviolet radiation. The following is shown. (1) Without the UV radiation the colony forms a disklike pattern and reaches a constant front velocity. (2) After the radiation is switched on, the bacterial population migrates to the edge of the colony and forms a ringlike pattern. As the intensity of the UV radiation is increased the ring forms faster and the outer velocity of the colony decreases. (3) For higher radiation intensities the total population decreases, while for lower intensities the total population increases initially at a small rate and then decreases. (4) After the UV radiation is switched off, the bacterial population grows both outward as well as into the inner region, and the colony's outer front velocity recovers to a constant value. All these results agree well with the experimental observations [Phys. Rev. Lett. 87, 158102 (2001)]. Along with the chemotaxis, we find that lubricant fluid and the two-stage destruction rate are critical to the dynamics of the growth of the bacterial colony when exposed to UV radiation, and these were not previously considered.

  14. Ultraviolet Spectroscopy of Protein Backbone Transitions in Aqueous Solution: Combined QM and MM Simulations

    E-Print Network [OSTI]

    Mukamel, Shaul

    Ultraviolet Spectroscopy of Protein Backbone Transitions in Aqueous Solution: Combined QM and MM (MM) calculations is developed to simulate the n f * and f * backbone transitions of proteins using a new algorithm, EHEF, which combines a molecular dynamics (MD) trajectory obtained with a MM

  15. NANODIAMOND DUST AND THE FAR-ULTRAVIOLET QUASAR BREAK Luc Binette,1

    E-Print Network [OSTI]

    Morisset, Christophe

    NANODIAMOND DUST AND THE FAR-ULTRAVIOLET QUASAR BREAK Luc Binette,1 Gladis Magris C.,2 Yair curve consisting of nanodiamonds, composed of terrestrial cubic diamonds or with surface impurities intrinsic dust model requires a mixture of both cubic diamonds and Allende nanodiamonds and provides

  16. First detection of an ultraviolet transition in an ionized polycyclic aromatic hydrocarbon

    E-Print Network [OSTI]

    ; accepted 3 May 1999 We report the first measurement of a polycyclic aromatic hydrocarbon cation electronicFirst detection of an ultraviolet transition in an ionized polycyclic aromatic hydrocarbon Xavier D of Physics. S0021-9606 99 02226-6 I. INTRODUCTION Polycyclic aromatic hydrocarbon PAH ions are prom- ising

  17. Global methane emission estimates from ultraviolet irradiation of terrestrial plant foliage

    E-Print Network [OSTI]

    Palmer, Paul

    of ultraviolet (UV) radiation-driven CH4 emissions from foliar pectin as a global CH4 source. · We combine source of UV-driven CH4 emissions and that other environmental stresses may also generate CH4 global warming potential 25 times that of CO2, and its current atmospheric concentration of 1.8 ppm makes

  18. Generation of intense continuum extreme-ultraviolet radiation by many-cycle

    E-Print Network [OSTI]

    Loss, Daniel

    LETTERS Generation of intense continuum extreme-ultraviolet radiation by many-cycle laser fields P in ultrashort pulse engineering have recently led to the breakthroughs of the generation of attosecond (10-18 s) pulse trains1­7 and isolated pulses8­11 . Although trains of multiple pulses can be generated through

  19. Signatures of the Protein Folding Pathway in Two-Dimensional Ultraviolet Spectroscopy

    E-Print Network [OSTI]

    Mukamel, Shaul

    Signatures of the Protein Folding Pathway in Two-Dimensional Ultraviolet Spectroscopy Jun Jiang of the signals provides a quantitative marker of protein folding status, accessible by both theoretical calculations and experiments. SECTION: Biophysical Chemistry and Biomolecules Protein folding is an important

  20. Combined effects of prepulsing and target geometry on efficient extreme ultraviolet

    E-Print Network [OSTI]

    Harilal, S. S.

    for Materials Under Extreme Environment School of Nuclear Engineering West Lafayette, Indiana 47907-2017 E-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.3609043] Subject terms: nanolithography; extreme ultraviolet materials can significantly reduce their lifetime, and as a result, the efficiency and the economy

  1. EuroGeo4 Paper number 226 INSTALLATION AND ULTRAVIOLET EXPOSURE DAMAGE OF GEOTEXTILES

    E-Print Network [OSTI]

    Zornberg, Jorge G.

    EuroGeo4 Paper number 226 1 INSTALLATION AND ULTRAVIOLET EXPOSURE DAMAGE OF GEOTEXTILES Benjamim, C-mail: zornberg@mail.utexas.edu) Abstract: A better understanding on the behavior of geotextile-reinforced soil material characterization program. Accordingly, eight prototype geotextile-reinforced soil structures were

  2. Non-thermal calcination by ultraviolet irradiation in the synthesis of microporous materials

    E-Print Network [OSTI]

    Parikh, Atul N.

    Non-thermal calcination by ultraviolet irradiation in the synthesis of microporous materials Atul N-directing agents in the synthesis of microporous materials. The method relies on the exposure of the sample. This method is applicable in making new materials from organic­inorganic pre- cursors and holds promise

  3. Could the Earth's surface Ultraviolet irradiance be blamed for the global warming? (II) ----Ozone layer depth reconstruction via HEWV effect

    E-Print Network [OSTI]

    Chen, Jilong; Zheng, Yujun

    2014-01-01

    It is suggested by Chen {\\it et al.} that the Earth's surface Ultraviolet irradiance ($280-400$ nm) could influence the Earth's surface temperature variation by "Highly Excited Water Vapor" (HEWV) effect. In this manuscript, we reconstruct the developing history of the ozone layer depth variation from 1860 to 2011 based on the HEWV effect. It is shown that the reconstructed ozone layer depth variation correlates with the observational variation from 1958 to 2005 very well ($R=0.8422$, $P>99.9\\%$). From this reconstruction, we may limit the spectra band of the surface Ultraviolet irradiance referred in HEWV effect to Ultraviolet B ($280-320$ nm).

  4. Subsurface flow constructed wetland: treatment of domestic wastewater by gravel and tire chip media and ultraviolet disinfection of effluent 

    E-Print Network [OSTI]

    Richmond, Amanda Yvette

    2002-01-01

    spray application, wetland effluent must be disinfected (traditionally by chlorine). This study determines the treatment efficiency of SFCWs filled with gravel or tire chip media to treat domestic wastewater and the effectiveness of ultraviolet (UV...

  5. Quality and Sensory Attributes of Shell Eggs Sanitized with a Combination of Hydrogen Peroxide and Ultraviolet Light 

    E-Print Network [OSTI]

    Woodring, Kristy Senise

    2011-10-21

    Two experiments were conducted to evaluate the combination of hydrogen peroxide (H2O2) and ultraviolet light (UV) as an alternative eggshell sanitization procedure for shell egg processing. In each experiment, two cases of eggs (720 total) were...

  6. Ultraviolet and white photon avalanche upconversion in Ho{sup 3+}-doped nanophase glass ceramics

    SciTech Connect (OSTI)

    Lahoz, F.; Martin, I.R.; Calvilla-Quintero, J.M.

    2005-01-31

    Ho{sup 3+}-doped fluoride nanophase glass ceramics have been synthesized from silica-based oxyfluoride glass. An intense white emission light is observed by the naked eye under near infrared excitation at 750 nm. This visible upconversion is due to three strong emission bands in the primary color components, red, green, and blue. Besides, ultraviolet signals are also recorded upon the same excitation wavelength. The excitation mechanism of both the ultraviolet and the visible emissions is a photon avalanche process with a relatively low pump power threshold at about 20 mW. The total upconverted emission intensity has been estimated to increase by about a factor of 20 in the glass ceramic compared to the precursor glass, in which an avalanche type mechanism is not generated.

  7. Final LDRD report :ultraviolet water purification systems for rural environments and mobile applications.

    SciTech Connect (OSTI)

    Banas, Michael Anthony; Crawford, Mary Hagerott; Ruby, Douglas Scott; Ross, Michael P.; Nelson, Jeffrey Scott; Allerman, Andrew Alan; Boucher, Ray

    2005-11-01

    We present the results of a one year LDRD program that has focused on evaluating the use of newly developed deep ultraviolet LEDs in water purification. We describe our development efforts that have produced an LED-based water exposure set-up and enumerate the advances that have been made in deep UV LED performance throughout the project. The results of E. coli inactivation with 270-295 nm LEDs are presented along with an assessment of the potential for applying deep ultraviolet LED-based water purification to mobile point-of-use applications as well as to rural and international environments where the benefits of photovoltaic-powered systems can be realized.

  8. Improved energy efficiency by use of the new ultraviolet light radiation paint curing process

    SciTech Connect (OSTI)

    Grosset, A.M.; Su, W.-F.A.

    1984-08-01

    In product finishing lines, ultraviolet radiation curing of paints on prefabricated structures is more energy efficient than curing by natural gas fired ovens, and could eliminate solvent emission. The replacement of a conventional natural gas fired oven by an ultraviolet radiation curing line for paint curing could save quadrillions of joules per year for each finishing line. In this program sponsored by the U.S. Department of Energy, Office of Industrial Programs, two photoinduced polymerizations, via free radical or cationic mechanisms, were considered in the formulation of UV curable paints. The spectral output of radiation sources was chosen so as to complement the absorption spectra of pigments and photoactive agents; thus highly pigmented thick films could be cured fully by UV radiation. One coat enamels, topcoats, and primers have been developed which can be applied on three dimensional objects by spraying and can be cured by passing through a tunnel containing UV lamps.

  9. Ultraviolet and electron irradiation of DC-704 siloxane oil in zinc orthotitanate paint

    SciTech Connect (OSTI)

    Mossman, D.L.; Barsh, M.K.; Greenberg, S.A.

    1982-01-01

    Discrepancies exist between accelerated laboratory simulation and geosynchronous orbit flight data for zinc orthotitanate (ZOT) paint degradation. The effects of ultraviolet and electron irradiation on ZOT contaminated with DC-704 silicone oil are reported. In-situ solar absorptance and emittance changes for contaminated and clean specimens are discussed with reference to post-test surface morphology, determined by scanning electron microscope analysis. Features of the contaminated ZOT degradation kinetics correlate with orbital performance.

  10. Heats of vaporization of room temperature ionic liquids by tunable vacuum ultraviolet photoionization

    SciTech Connect (OSTI)

    Chambreau, Steven D.; Vaghjiani, Ghanshyam L.; To, Albert; Koh, Christine; Strasser, Daniel; Kostko, Oleg; Leone, Stephen R.

    2009-11-25

    The heats of vaporization of the room temperature ionic liquids (RTILs) N-butyl-N-methylpyrrolidinium bistrifluorosulfonylimide, N-butyl-N-methylpyrrolidinium dicyanamide, and 1-butyl-3-methylimidazolium dicyanamide are determined using a heated effusive vapor source in conjunction with single photon ionization by a tunable vacuum ultraviolet synchrotron source. The relative gas phase ionic liquid vapor densities in the effusive beam are monitored by clearly distinguished dissociative photoionization processes via a time-of-flight mass spectrometer at a tunable vacuum ultraviolet beamline 9.0.2.3 (Chemical Dynamics Beamline) at the Advanced Light Source synchrotron facility. Resulting in relatively few assumptions, through the analysis of both parent cations and fragment cations, the heat of vaporization of N-butyl-N-methylpyrrolidinium bistrifluorosulfonylimide is determined to be Delta Hvap(298.15 K) = 195+-19 kJ mol-1. The observed heats of vaporization of 1-butyl-3-methylimidazolium dicyanamide (Delta Hvap(298.15 K) = 174+-12 kJ mol-1) and N-butyl-N-methylpyrrolidinium dicyanamide (Delta Hvap(298.15 K) = 171+-12 kJ mol-1) are consistent with reported experimental values using electron impact ionization. The tunable vacuum ultraviolet source has enabled accurate measurement of photoion appearance energies. These appearance energies are in good agreement with MP2 calculations for dissociative photoionization of the ion pair. These experimental heats of vaporization, photoion appearance energies, and ab initio calculations corroborate vaporization of these RTILs as intact cation-anion ion pairs.

  11. Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography

    SciTech Connect (OSTI)

    Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-07-07

    The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6° through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350?mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

  12. Probing temporal evolution of extreme ultraviolet assisted contamination on Ru mirror by x-ray photoelectron spectroscopy

    E-Print Network [OSTI]

    Harilal, S. S.

    Lafayette, Indiana 47907 B. Rice SEMATECH Inc., Albany, New York 12203 (Received 7 October 2011; accepted 4 concentration in the first 1 h followed by a slow but linear growth in the presence of EUV radiation. Further from plasma source to the mask and then to target wafer.5 However, Mo/Si MLM shows a very poor chemical

  13. Ionizing and ultraviolet radiation enhances the efficiency of DNA mediated gene transfer in vitro

    SciTech Connect (OSTI)

    Perez, C.F.

    1984-08-01

    The enhancement effects of ionizing and non-ionizing radiation on the efficiency of DNA mediated gene transfer were studied. Confluent Rat-2 cells were transfected with purified SV40 viral DNA, irradiated with either X-rays or ultraviolet, trypsinized, plated, and assayed for the formation of foci on Rat-2 monolayers. Both ionizing and ultraviolet radiation enhanced the frequency of A-gene transformants/survivor compared to unirradiated transfected cells. These enhancements were non-linear and dose dependent. A recombinant plasmid, pOT-TK5, was constructed that contained the SV40 virus A-gene and the Herpes Simplex virus (HSV) thymidine kinase (TK) gene. Confluent Rat-2 cells transfected with pOT-TK5 DNA and then immediately irradiated with either X-rays or 330 MeV/amu argon particles at the Berkeley Bevalac showed a higher frequency of HAT/sup +/ colonies/survivor than unirradiated transfected cells. Rat-2 cells transfected with the plasmid, pTK2, containing only the HSV TK-gene were enhanced for TK-transformation by both X-rays and ultraviolet radiation. The results demonstrate that radiation enhancement of the efficiency of DNA mediated gene transfer is not explained by increased nuclear uptake of the transfected DNA. Radiation increases the competence of the transfected cell population for genetic transformation. Three models for this increased competence are presented. The targeted integration model, the inducible recombination model, the partition model, and the utilization of DNA mediated gene transfer for DNA repair studies are discussed. 465 references.

  14. JET ROTATION INVESTIGATED IN THE NEAR-ULTRAVIOLET WITH THE HUBBLE SPACE TELESCOPE IMAGING SPECTROGRAPH

    SciTech Connect (OSTI)

    Coffey, Deirdre; Ray, Thomas P.; Rigliaco, Elisabetta; Bacciotti, Francesca; Eisloeffel, Jochen

    2012-04-20

    We present results of the second phase of our near-ultraviolet investigation into protostellar jet rotation using the Hubble Space Telescope Imaging Spectrograph. We obtain long-slit spectra at the base of five T Tauri jets to determine if there is a difference in radial velocity between the jet borders which may be interpreted as a rotation signature. These observations are extremely challenging and push the limits of current instrumentation, but have the potential to provide long-awaited observational support for the magnetocentrifugal mechanism of jet launching in which jets remove angular momentum from protostellar systems. We successfully detect all five jet targets (from RW Aur, HN Tau, DP Tau, and CW Tau) in several near-ultraviolet emission lines, including the strong Mg II doublet. However, only RW Aur's bipolar jet presents a sufficiently high signal-to-noise ratio to allow for analysis. The approaching jet lobe shows a difference of 10 km s{sup -1} in a direction which agrees with the disk rotation sense, but is opposite to previously published optical measurements for the receding jet. The near-ultraviolet difference is not found six months later, nor is it found in the fainter receding jet. Overall, in the case of RW Aur, differences are not consistent with a simple jet rotation interpretation. Indeed, given the renowned complexity and variability of this system, it now seems likely that any rotation signature is confused by other influences, with the inevitable conclusion that RW Aur is not suited to a jet rotation study.

  15. Total to Selective Extinction Ratios and Visual Extinctions from Ultraviolet Data

    E-Print Network [OSTI]

    Anna Geminale; Piotr Popowski

    2004-09-21

    We present determinations of the total to selective extinction ratio R_V and visual extinction A_V values for Milky Way stars using ultraviolet color excesses. We extend the analysis of Gnacinski and Sikorski (1999) by using non-equal weights derived from observational errors. We present a detailed discussion of various statistical errors. In addition, we estimate the level of systematic errors by considering different normalization of the extinction curve adopted by Wegner (2002). Our catalog of 782 R_V and A_V values and their errors is available in the electronic form on the World Wide Web.

  16. Vacuum ultraviolet and infrared spectra of condensed methyl acetate on cold astrochemical dust analogs

    SciTech Connect (OSTI)

    Sivaraman, B.; Nair, B. G.; Mason, N. J.; Lo, J.-I.; Cheng, B.-M.; Kundu, S.; Davis, D.; Prabhudesai, V.; Krishnakumar, E.; Raja Sekhar, B. N.

    2013-12-01

    Following the recent report of the first identification of methyl acetate (CH{sub 3}COOCH{sub 3}) in the interstellar medium (ISM), we have carried out vacuum ultraviolet (VUV) and infrared (IR) spectroscopy studies on methyl acetate from 10 K until sublimation in an ultrahigh vacuum chamber simulating astrochemical conditions. We present the first VUV and IR spectra of methyl acetate relevant to ISM conditions. Spectral signatures clearly showed molecular reorientation to have started in the ice by annealing the amorphous ice formed at 10 K. An irreversible phase change from amorphous to crystalline methyl acetate ice was found to occur between 110 K and 120 K.

  17. Improving Ramsey spectroscopy in the extreme-ultraviolet region with a random-sampling approach

    SciTech Connect (OSTI)

    Eramo, R.; Bellini, M. [Istituto Nazionale di Ottica (INO-CNR), Largo E. Fermi 6, I-50125 Florence (Italy); European Laboratory for Non-linear Spectroscopy (LENS), I-50019 Sesto Fiorentino, Florence (Italy); Corsi, C.; Liontos, I. [European Laboratory for Non-linear Spectroscopy (LENS), I-50019 Sesto Fiorentino, Florence (Italy); Cavalieri, S. [European Laboratory for Non-linear Spectroscopy (LENS), I-50019 Sesto Fiorentino, Florence (Italy); Department of Physics, University of Florence, I-50019 Sesto Fiorentino, Florence (Italy)

    2011-04-15

    Ramsey-like techniques, based on the coherent excitation of a sample by delayed and phase-correlated pulses, are promising tools for high-precision spectroscopic tests of QED in the extreme-ultraviolet (xuv) spectral region, but currently suffer experimental limitations related to long acquisition times and critical stability issues. Here we propose a random subsampling approach to Ramsey spectroscopy that, by allowing experimentalists to reach a given spectral resolution goal in a fraction of the usual acquisition time, leads to substantial improvements in high-resolution spectroscopy and may open the way to a widespread application of Ramsey-like techniques to precision measurements in the xuv spectral region.

  18. Cooperative effect of ultraviolet and near-infrared beams in laser-induced condensation

    SciTech Connect (OSTI)

    Matthews, M.; Henin, S.; Pomel, F.; Kasparian, J.; Wolf, J.-P.; Théberge, F.; Daigle, J.-F.; Lassonde, P.; Kieffer, J.-C.

    2013-12-23

    We demonstrate the cooperative effect of near infrared (NIR) and ultraviolet (UV) beams on laser-induced condensation. Launching a UV laser after a NIR pulse yields up to a 5-fold increase in the production of nanoparticles (25–300 nm) as compared to a single NIR beam. This cooperative effect exceeds the sum of those from the individual beams and occurs for delays up to 1 ?s. We attribute it to the UV photolysis of ozone created by the NIR pulses. The resulting OH radicals oxidize NO{sub 2} and volatile organic compounds, producing condensable species.

  19. Highly reproducible and reliable metal/graphene contact by ultraviolet-ozone treatment

    SciTech Connect (OSTI)

    Li, Wei [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Hacker, Christina A.; Cheng, Guangjun; Hight Walker, A. R.; Richter, Curt A.; Gundlach, David J., E-mail: david.gundlach@nist.gov, E-mail: liangxl@pku.edu.cn [Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Liang, Yiran; Tian, Boyuan; Liang, Xuelei, E-mail: david.gundlach@nist.gov, E-mail: liangxl@pku.edu.cn; Peng, Lianmao [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China)

    2014-03-21

    Resist residue from the device fabrication process is a significant source of contamination at the metal/graphene contact interface. Ultraviolet Ozone (UVO) treatment is proven here, by X-ray photoelectron spectroscopy and Raman measurement, to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices that were fabricated by using UVO treatment of the metal/graphene contact region show that stable and reproducible low resistance metal/graphene contacts are obtained and the electrical properties of the graphene channel remain unaffected.

  20. Rare-earth plasma extreme ultraviolet sources at 6.5-6.7 nm

    SciTech Connect (OSTI)

    Otsuka, Takamitsu; Higashiguchi, Takeshi; Yugami, Noboru; Yatagai, Toyohiko [Department of Advanced Interdisciplinary Sciences, Center for Optical Research and Education (CORE), Utsunomiya University, Yoto 7-1-2, Utsunomiya, Tochigi 321-8585 (Japan); Kilbane, Deirdre; White, John; Dunne, Padraig; O'Sullivan, Gerry [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Jiang, Weihua [Department of Electrical Engineering, Nagaoka University of Technology, Kami-tomiokamachi 1603-1, Nagaoka, Niigata 940-2188 (Japan); Endo, Akira [Forschungszentrum Dresden, Bautzner Landstrs. 400, D-01328 Dresden (Germany)

    2010-09-13

    We have demonstrated a laser-produced plasma extreme ultraviolet source operating in the 6.5-6.7 nm region based on rare-earth targets of Gd and Tb coupled with a Mo/B{sub 4}C multilayer mirror. Multiply charged ions produce strong resonance emission lines, which combine to yield an intense unresolved transition array. The spectra of these resonant lines around 6.7 nm (in-band: 6.7 nm {+-}1%) suggest that the in-band emission increases with increased plasma volume by suppressing the plasma hydrodynamic expansion loss at an electron temperature of about 50 eV, resulting in maximized emission.

  1. Construction and characterization of ultraviolet acousto-optic based femtosecond pulse shapers

    SciTech Connect (OSTI)

    Mcgrane, Shawn D [Los Alamos National Laboratory; Moore, David S [Los Alamos National Laboratory; Greenfield, Margo T [Los Alamos National Laboratory

    2008-01-01

    We present all the information necessary for construction and characterization of acousto optic pulse shapers, with a focus on ultraviolet wavelengths, Various radio-frequency drive configurations are presented to allow optimization via knowledgeable trade-off of design features. Detailed performance characteristics of a 267 nm acousto-optic modulator (AOM) based pulse shaper are presented, Practical considerations for AOM based pulse shaping of ultra-broad bandwidth (sub-10 fs) amplified femtosecond pulse shaping are described, with particular attention paid to the effects of the RF frequency bandwidth and optical frequency bandwidth on the spatial dispersion of the output laser pulses.

  2. Chemo-physical properties of renal capsules under ultraviolet-c exposure

    SciTech Connect (OSTI)

    Baghapour, Sh.; Parvin, P. Mokhtari, S.; Reyhani, A.; Mortazavi, S. Z.; Amjadi, A.

    2014-08-07

    The renal capsule tissue of lamb was irradiated with ultraviolet-C light and the treated samples were analyzed by uniaxial tensile test, dynamic mechanical analysis, attenuated total reflectance Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and contact angle measurements. It was shown that the skin cross-linking is dominant in low doses in accordance with the contact angle assessment. Conversely, the strong bulk degradation takes place at high doses. Similarly, the bulk cross-linking affects the mechanical tests as to enhance the stiffness at low doses, whereas strong degradation occurs at high doses that mainly arises from the strong bulk chain scission.

  3. Far-ultraviolet Observations of the North Ecliptic Pole with SPEAR

    E-Print Network [OSTI]

    Eric J. Korpela; Jerry Edelstein; Julia Kregenow; Kaori Nishikida; Kyoung-Wook Min; Dae-Hee Lee; Kwangsun Ryu; Wonyong Han; Uk-Won Nam; Jang-Hyun Park

    2006-01-26

    We present SPEAR/FIMS far-ultraviolet observations near the North Ecliptic Pole. This area, at b~30 degrees and with intermediate HI column, seems to be a fairly typical line of sight that is representative of general processes in the diffuse ISM. We detect a surprising number of emission lines of many elements at various ionization states representing gas phases from the warm neutral medium (WNM) to the hot ionized medium (HIM). We also detect fluorescence bands of H2, which may be due to the ubiquitous diffuse H2 previously observed in absorption.

  4. A Cost-Driven Fracture Heuristics to Minimize External Sliver Length

    E-Print Network [OSTI]

    Zakhor, Avideh

    A Cost-Driven Fracture Heuristics to Minimize External Sliver Length Xu Ma, Shangliang Jiang lithography, mask pattern is first fractured into basic trapezoids, and then fabricated by the variable shaped beam mask writing machine. Ideally, mask fracture tools aim at both suppressing the trapezoid count

  5. Polaritonic-to-Plasmonic Transition in Optically Resonant Bismuth Nanospheres for High-Contrast Switchable Ultraviolet Meta-Filters

    E-Print Network [OSTI]

    Cuadrado, Alexander; Serna, Rosalia

    2015-01-01

    In the quest aimed at unveiling alternative plasmonic elements overcoming noble metals for selected applications in photonics, we investigate by numerical simulations the near ultraviolet-to-near infrared optical response of solid and liquid Bi nanospheres embedded in a dielectric matrix. We also determine the resulting transmission contrast upon reversible solid-liquid phase transition to evaluate their potential for switchable optical filtering. The optical response of the solid (liquid) Bi nanospheres is ruled by localized polaritonic (plasmonic) resonances tunable by controlling the diameter. For a selected diameter between 20 nm and 50 nm, both solid and liquid nanospheres present a dipolar resonance inducing a strong peak extinction in the near ultraviolet, however at different photon energies. This enables a high transmission contrast at selected near ultraviolet photon energies. It is estimated that a two-dimensional assembly of 20 nm solid Bi nanospheres with a surface coverage of 28% will totally ex...

  6. Laser Desorption Postionization Mass Spectrometry of Antibiotic-Treated Bacterial Biofilms using Tunable Vacuum Ultraviolet Radiation

    SciTech Connect (OSTI)

    Gasper, Gerald L.; Takahashi, Lynelle K.; Zhou, Jia; Ahmed, Musahid; Moore, Jerry F.; Hanley, Luke

    2010-08-04

    Laser desorption postionization mass spectrometry (LDPI-MS) with 8.0 ? 12.5 eV vacuum ultraviolet synchrotron radiation is used to single photon ionize antibiotics andextracellular neutrals that are laser desorbed both neat and from intact bacterial biofilms. Neat antibiotics are optimally detected using 10.5 eV LDPI-MS, but can be ionized using 8.0 eV radiation, in agreement with prior work using 7.87 eV LDPI-MS. Tunable vacuum ultraviolet radiation also postionizes laser desorbed neutrals of antibiotics and extracellular material from within intact bacterial biofilms. Different extracellular material is observed by LDPI-MS in response to rifampicin or trimethoprim antibiotic treatment. Once again, 10.5 eV LDPI-MS displays the optimum trade-off between improved sensitivity and minimum fragmentation. Higher energy photons at 12.5 eV produce significant parent ion signal, but fragment intensity and other low mass ions are also enhanced. No matrix is added to enhance desorption, which is performed at peak power densities insufficient to directly produce ions, thus allowing observation of true VUV postionization mass spectra of antibiotic treated biofilms.

  7. Vacuum-Ultraviolet (VUV) Photoionization of Small Methanol and Methanol-Water Clusters

    SciTech Connect (OSTI)

    Kostko, Oleg; Belau, Leonid; Wilson, Kevin R.; Ahmed, Musahid

    2008-04-24

    In this work, we report on the vacuum-ultraviolet (VUV) photoionization of small methanol and methanol-water clusters. Clusters of methanol with water are generated via co-expansion of the gas phase constituents in a continuous supersonic jet expansion of methanol and water seeded in Ar. The resulting clusters are investigated by single photon ionization with tunable vacuum-ultraviolet synchrotron radiation and mass analyzed using reflectron mass spectrometry. Protonated methanol clusters of the form (CH3OH)nH+(n = 1-12) dominate the mass spectrum below the ionization energy of the methanol monomer. With an increase in water concentration, small amounts of mixed clusters of the form (CH3OH n(H2O)H+ (n = 2-11) are detected. The only unprotonated species observed in this work are the methanol monomer and dimer. Appearance energies are obtained from the photoionization efficiency (PIE) curves for CH3OH+, (CH3OH)2+, (CH3OH)nH+ (n = 1-9), and (CH3OH)n(H2O)H+ (n = 2-9) as a function of photon energy. With an increasein the water content in the molecular beam, there is an enhancement of photoionization intensity for the methanol dimer and protonated methanol monomer at threshold. These results are compared and contrasted to previous experimental observations.

  8. Detection of neutral phosphorus in the near-ultraviolet spectra of late-type stars

    SciTech Connect (OSTI)

    Roederer, Ian U. [Department of Astronomy, University of Michigan, 1085 South University Avenue, Ann Arbor, MI 48109 (United States); Jacobson, Heather R.; Thanathibodee, Thanawuth; Frebel, Anna; Toller, Elizabeth, E-mail: iur@umich.edu [Department of Physics and Kavli Institute for Astrophysics and Space Research, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139 (United States)

    2014-12-10

    We report the detection of several absorption lines of neutral phosphorus (P, Z = 15) in archival near-ultraviolet spectra obtained with the Space Telescope Imaging Spectrograph on board the Hubble Space Telescope. We derive phosphorus abundances or interesting upper limits in 14 late-type stars with metallicities spanning –3.8 < [Fe/H] <–0.1. Previously, phosphorus had only been studied in Galactic stars with –1.0 < [Fe/H] <+0.3. Iron lines reveal abundance offsets between the optical and ultraviolet regions, and we discuss and apply a correction factor to account for this offset. In stars with [Fe/H] >–1.0, the [P/Fe] ratio decreases toward the solar value with increasing metallicity, in agreement with previous observational studies. In stars with [Fe/H] <–1.0, ([P/Fe]) = +0.04 ± 0.10, which overlaps with the [P/Fe] ratios found in several high-redshift damped Lyman-? systems. This behavior hints at a primary origin in massive stars.

  9. Nuclear activity versus star formation: emission-line diagnostics at ultraviolet and optical wavelengths

    E-Print Network [OSTI]

    Feltre, Anna; Gutkin, Julia

    2015-01-01

    In the context of observations of the rest-frame ultraviolet and optical emission from distant galaxies, we explore the emission-line properties of photoionization models of active and inactive galaxies. Our aim is to identify new line-ratio diagnostics to discriminate between gas photoionization by active galactic nuclei (AGN) and star formation. We use a standard photoionization code to compute the emission from AGN narrow-line regions and compare this with calculations of the nebular emission from star-forming galaxies achieved using the same code. We confirm the appropriateness of widely used optical spectral diagnostics of nuclear activity versus star formation and explore new diagnostics at ultraviolet wavelengths. We find that combinations of a collisionally excited metal line or line multiplet, such as CIV 1548,1551, OIII]1661,1666, NIII]1750, [SiIII]1883+[SiIII]1892 and [CIII]1907+CIII]1909, with the HeII 1640 recombination line are individually good discriminants of the nature of the ionizing source...

  10. Viability of Cladosporium herbarum spores under 157 nm laser and vacuum ultraviolet irradiation, low temperature (10 K) and vacuum

    SciTech Connect (OSTI)

    Sarantopoulou, E. Stefi, A.; Kollia, Z.; Palles, D.; Cefalas, A. C.; Petrou, P. S.; Bourkoula, A.; Koukouvinos, G.; Kakabakos, S.; Velentzas, A. D.

    2014-09-14

    Ultraviolet photons can damage microorganisms, which rarely survive prolonged irradiation. In addition to the need for intact DNA, cell viability is directly linked to the functionality of the cell wall and membrane. In this work, Cladosporium herbarum spore monolayers exhibit high viability (7%) when exposed to 157 nm laser irradiation (412 kJm?²) or vacuum-ultraviolet irradiation (110–180 nm) under standard pressure and temperature in a nitrogen atmosphere. Spore viability can be determined by atomic-force microscopy, nano-indentation, mass, ?-Raman and attenuated reflectance Fourier-transform far-infrared spectroscopies and DNA electrophoresis. Vacuum ultraviolet photons cause molecular damage to the cell wall, but radiation resistance in spores arises from the activation of a photon-triggered signaling reaction, expressed via the exudation of intracellular substances, which, in combination with the low penetration depth of vacuum-ultraviolet photons, shields DNA from radiation. Resistance to phototoxicity under standard conditions was assessed, as was resistance to additional environmental stresses, including exposure in a vacuum, under different rates of change of pressure during pumping time and low (10 K) temperatures. Vacuum conditions were far more destructive to spores than vacuum-ultraviolet irradiation, and UV-B photons were two orders of magnitude more damaging than vacuum-ultraviolet photons. The viability of irradiated spores was also enhanced at 10 K. This work, in addition to contributing to the photonic control of the viability of microorganisms exposed under extreme conditions, including decontamination of biological warfare agents, outlines the basis for identifying bio-signaling in vivo using physical methodologies.

  11. Room-temperature ultraviolet emission from an organic light-emitting diode C. F. Qiu, L. D. Wang, H. Y. Chen, M. Wong, and H. S. Kwok

    E-Print Network [OSTI]

    Room-temperature ultraviolet emission from an organic light-emitting diode C. F. Qiu, L. D. Wang, H Ultraviolet emission was obtained from N,N -diphenyl-N,N -bis 3-methylphenyl - 1,1 -bi phenyl -4,4 -diamine. Gallium nitride was used as a hole-blocking layer to contain the holes. A peak emission wavelength of 400

  12. Development of a coherent vacuum ultraviolet source at 104108 nm generated by four-wave sum frequency mixing in Hg vapor

    E-Print Network [OSTI]

    Kim, Myung Soo

    Development of a coherent vacuum ultraviolet source at 104­108 nm generated by four-wave sum-harmonic generation and four-wave mixing in a gas- eous nonlinear medium.8­11 Two tunable outputs from a pulsed dye ultraviolet VUV light source in the 104­108 nm range has been developed by utilizing four-wave sum frequency

  13. Electron density diagnostics for solar ultraviolet lines E. O'Shea (e.oshea@queensbelfast.ac.uk), T. O'Neill

    E-Print Network [OSTI]

    :4), in conjunction with observational data obtained with the Solar Ultraviolet Measurements of Emitted Radiation resolve these fea­ tures. However, with the Solar Ultraviolet Measurements of Emitted Radiation (sumer of this particular ratio in different solar regions and in testing the accuracy of the new atomic data discussed here

  14. Please cite this article in press as: S. Selvarasah, et al., A reusable high aspect ratio parylene-C shadow mask technology for diverse micropat-terning applications, Sens. Actuators A: Phys. (2007), doi:10.1016/j.sna.2007.10.053

    E-Print Network [OSTI]

    Sridhar, Srinivas

    2007-01-01

    .sciencedirect.com Sensors and Actuators A xxx (2007) xxx­xxx A reusable high aspect ratio parylene-C shadow mask technologyPlease cite this article in press as: S. Selvarasah, et al., A reusable high aspect ratio parylene-C shadow mask technology for diverse micropat- terning applications, Sens. Actuators A: Phys. (2007), doi

  15. Devices useful for vacuum ultraviolet beam characterization including a movable stage with a transmission grating and image detector

    SciTech Connect (OSTI)

    Gessner, Oliver; Kornilov, Oleg A; Wilcox, Russell B

    2013-10-29

    The invention provides for a device comprising an apparatus comprising (a) a transmission grating capable of diffracting a photon beam into a diffracted photon output, and (b) an image detector capable of detecting the diffracted photon output. The device is useful for measuring the spatial profile and diffraction pattern of a photon beam, such as a vacuum ultraviolet (VUV) beam.

  16. Vacuum ultraviolet mass-analyzed threshold ionization spectroscopy of benzene: Vibrational analysis of C6H6

    E-Print Network [OSTI]

    Kim, Myung Soo

    Vacuum ultraviolet mass-analyzed threshold ionization spectroscopy of benzene: Vibrational analysis-photon spectra agrees with the previous suggestion that the geometry of benzene cation in the ground electronic. INTRODUCTION Benzene cation has been the focus of an intensive re- search effort, both experimental1

  17. PUBLISHED ONLINE: 31 MARCH 2013 | DOI: 10.1038/NPHYS2590 Extreme-ultraviolet light generation in

    E-Print Network [OSTI]

    Loss, Daniel

    generation in plasmonic nanostructures M. Sivis1 , M. Duwe1 , B. Abel2 and C. Ropers1 * Strong-harmonic generation. However, there is growing tension between the great promise held by extreme-ultraviolet and attosecond-pulse generation on the nanoscale, and the lack of successful implementations. Here, we address

  18. Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film

    E-Print Network [OSTI]

    Deng, Xunming

    -infrared to ultraviolet: Applications in thin film photovoltaics A. S. Ferlauto, G. M. Ferreira, J. M. Pearce, C. R. Wronski, and R. W. Collinsa) Department of Physics, Materials Research Institute, and Center for Thin Film, it has numerous applications in the analysis and simulation of thin film a-Si:H based p-i-n and n

  19. Efficient 13.5 nm extreme ultraviolet emission from Sn plasma irradiated by a long CO2 laser pulse

    E-Print Network [OSTI]

    Najmabadi, Farrokh

    Efficient 13.5 nm extreme ultraviolet emission from Sn plasma irradiated by a long CO2 laser pulse 17 April 2008; accepted 4 June 2008; published online 23 June 2008 The effect of pulse duration on in with pulse durations from 25 to 110 ns. Employing a long pulse, for example, 110 ns, in a CO2 laser system

  20. Interaction of methanol and water on MgO,,100... studied by ultraviolet photoelectron and metastable impact electron spectroscopies

    E-Print Network [OSTI]

    Goodman, Wayne

    Interaction of methanol and water on MgO,,100... studied by ultraviolet photoelectron; accepted 27 October 1998 The coadsorption of methanol (CH3OH) and water (D2O) on the MgO 100 /Mo 100 photoelectron spectroscopy UPS HeI , and by thermal programmed desorption TPD . Methanol wets the MgO surface

  1. A close-up of the Sun (shown in ultraviolet light) reveals a mottled surface, bright flares,

    E-Print Network [OSTI]

    Christian, Eric

    #12;#12;A close-up of the Sun (shown in ultraviolet light) reveals a mottled surface, bright flares, and tongues of hot gas leaping into space. Though they look like burns in the face of the Sun, sunspots circle in the center of the photo--allows scientists to see the solar wind streaming away from the Sun

  2. THE ROLE OF POLYCYCLIC AROMATIC HYDROCARBONS IN ULTRAVIOLET EXTINCTION. I. PROBING SMALL MOLECULAR POLYCYCLIC AROMATIC HYDROCARBONS1

    E-Print Network [OSTI]

    THE ROLE OF POLYCYCLIC AROMATIC HYDROCARBONS IN ULTRAVIOLET EXTINCTION. I. PROBING SMALL MOLECULAR POLYCYCLIC AROMATIC HYDROCARBONS1 Geoffrey C. Clayton,2 Karl D. Gordon,3 F. Salama,4 L. J. Allamandola,4, with particular emphasis on a search for absorp- tion features produced by polycyclic aromatic hydrocarbons (PAHs

  3. Electrically tunable selective reflection of light from ultraviolet to visible and infrared by heliconical cholesterics

    E-Print Network [OSTI]

    Xiang, Jie; Li, Quan; Paterson, Daniel A; Storey, John M D; Imrie, Corrie T; Lavrentovich, Oleg D

    2015-01-01

    Cholesteric liquid crystals with helicoidal molecular architecture are known for their ability to selectively reflect light with the wavelength that is determined by the periodicity of molecular orientations. Here we demonstrate that by using a cholesteric with oblique helicoidal(heliconical) structure, as opposed to the classic right-angle helicoid, one can vary the wavelength of selectively reflected light in a broad spectral range, from ultraviolet to visible and infrared (360-1520 nm for the same chemical composition) by simply adjusting the electric field applied parallel to the helicoidal axis. The effect exists in a wide temperature range (including the room temperatures) and thus can enable many applications that require dynamically controlled transmission and reflection of electromagnetic waves, from energy-saving smart windows to tunable organic lasers, reflective color display, and transparent see-through displays.

  4. Electrically tunable selective reflection of light from ultraviolet to visible and infrared by heliconical cholesterics

    E-Print Network [OSTI]

    Jie Xiang; Yannian Li; Quan Li; Daniel A. Paterson; John M. D. Storey; Corrie T. Imrie; Oleg D. Lavrentovich

    2015-03-30

    Cholesteric liquid crystals with helicoidal molecular architecture are known for their ability to selectively reflect light with the wavelength that is determined by the periodicity of molecular orientations. Here we demonstrate that by using a cholesteric with oblique helicoidal(heliconical) structure, as opposed to the classic right-angle helicoid, one can vary the wavelength of selectively reflected light in a broad spectral range, from ultraviolet to visible and infrared (360-1520 nm for the same chemical composition) by simply adjusting the electric field applied parallel to the helicoidal axis. The effect exists in a wide temperature range (including the room temperatures) and thus can enable many applications that require dynamically controlled transmission and reflection of electromagnetic waves, from energy-saving smart windows to tunable organic lasers, reflective color display, and transparent see-through displays.

  5. Accretion Rates for T Tauri Stars Using Nearly Simultaneous Ultraviolet and Optical Spectra

    E-Print Network [OSTI]

    Ingleby, Laura; Herczeg, Gregory; Blaty, Alex; Walter, Frederick; Ardila, David; Alexander, Richard; Edwards, Suzan; Espaillat, Catherine; Gregory, Scott G; Hillenbrand, Lynne; Brown, Alexander

    2013-01-01

    We analyze the accretion properties of 21 low mass T Tauri stars using a dataset of contemporaneous near ultraviolet (NUV) through optical observations obtained with the Hubble Space Telescope Imaging Spectrograph (STIS) and the ground based Small and Medium Aperture Research Telescope System (SMARTS), a unique dataset because of the nearly simultaneous broad wavelength coverage. Our dataset includes accreting T Tauri stars (CTTS) in Taurus, Chamaeleon I, $\\eta$ Chamaeleon and the TW Hydra Association. For each source we calculate the accretion rate by fitting the NUV and optical excesses above the photosphere, produced in the accretion shock, introducing multiple accretion components characterized by a range in energy flux (or density) for the first time. This treatment is motivated by models of the magnetospheric geometry and accretion footprints, which predict that high density, low filling factor accretion spots co-exist with low density, high filling factor spots. By fitting the UV and optical spectra wi...

  6. QUIET-SUN INTENSITY CONTRASTS IN THE NEAR-ULTRAVIOLET AS MEASURED FROM SUNRISE

    SciTech Connect (OSTI)

    Hirzberger, J.; Feller, A.; Riethmueller, T. L.; Schuessler, M.; Borrero, J. M.; Gandorfer, A.; Solanki, S. K.; Barthol, P.; Afram, N.; Unruh, Y. C.; Berdyugina, S. V.; Berkefeld, T.; Schmidt, W.; Bonet, J. A.; MartInez Pillet, V.; Knoelker, M.; Title, A. M.

    2010-11-10

    We present high-resolution images of the Sun in the near-ultraviolet spectral range between 214 nm and 397 nm as obtained from the first science flight of the 1 m SUNRISE balloon-borne solar telescope. The quiet-Sun rms intensity contrasts found in this wavelength range are among the highest values ever obtained for quiet-Sun solar surface structures-up to 32.8% at a wavelength of 214 nm. We compare the rms contrasts obtained from the observational data with theoretical intensity contrasts obtained from numerical magnetohydrodynamic simulations. For 388 nm and 312 nm the observations agree well with the numerical simulations whereas at shorter wavelengths discrepancies between observed and simulated contrasts remain.

  7. Ultraviolet Luminosity Density of the Universe During the Epoch of Reionization

    E-Print Network [OSTI]

    Mitchell-Wynne, Ketron; Gong, Yan; Ashby, Matthew; Dolch, Timothy; Ferguson, Henry; Finkelstein, Steven; Grogin, Norman; Kocevski, Dale; Koekemoer, Anton; Primack, Joel; Smidt, Joseph

    2015-01-01

    The spatial fluctuations of the extragalactic background light trace the total emission from all stars and galaxies in the Universe. A multi-wavelength study can be used to measure the integrated emission from first galaxies during reionization when the Universe was about 500 million years old. Here we report arcminute-scale spatial fluctuations in one of the deepest sky surveys with the Hubble Space Telescope in five wavebands between 0.6 and 1.6 $\\mu$m. We model-fit the angular power spectra of intensity fluctuation measurements to find the ultraviolet luminosity density of galaxies at $z$ > 8 to be $\\log \\rho_{\\rm UV} = 27.4^{+0.2}_{-1.2}$ erg s$^{-1}$ Hz$^{-1}$ Mpc$^{-3}$ $(1\\sigma)$. This level of integrated light emission allows for a significant surface density of fainter primeval galaxies that are below the point source detection level in current surveys.

  8. Dynamics of the solar chromosphere. V. High-frequency modulation in ultraviolet image sequences from TRACE

    E-Print Network [OSTI]

    A. G. de Wijn; R. J. Rutten; T. D. Tarbell

    2007-06-13

    We search for signatures of high-frequency oscillations in the upper solar photosphere and low chromosphere in the context of acoustic heating of outer stellar atmospheres. We use ultraviolet image sequences of a quiet center-disk area from the Transition Region and Coronal Explorer (TRACE) mission which were taken with strict cadence regularity. The latter permits more reliable high-frequency diagnosis than in earlier work. Spatial Fourier power maps, spatially averaged coherence and phase-difference spectra, and spatio-temporal k-f decompositions all contain high-frequency features that at first sight seem of considerable intrinsic interest but actually are more likely to represent artifacts of different nature. Spatially averaged phase difference measurement provides the most sensitive diagnostic and indicates the presence of acoustic modulation up to f=20 mHz (periods down to 50 seconds) in internetwork areas.

  9. Cluster beam targets for laser plasma extreme ultraviolet and soft x-ray sources

    DOE Patents [OSTI]

    Kublak, G.D.; Richardson, M.C.

    1996-11-19

    Method and apparatus for producing extreme ultraviolet (EUV) and soft x-ray radiation from an ultra-low debris plasma source are disclosed. Targets are produced by the free jet expansion of various gases through a temperature controlled nozzle to form molecular clusters. These target clusters are subsequently irradiated with commercially available lasers of moderate intensity (10{sup 11}--10{sup 12} watts/cm{sup 2}) to produce a plasma radiating in the region of 0.5 to 100 nanometers. By appropriate adjustment of the experimental conditions the laser focus can be moved 10--30 mm from the nozzle thereby eliminating debris produced by plasma erosion of the nozzle. 5 figs.

  10. Tunable vacuum ultraviolet laser based spectrometer for angle resolved photoemission spectroscopy

    SciTech Connect (OSTI)

    Jiang, Rui; Mou, Daixiang; Wu, Yun; Huang, Lunan; Kaminski, Adam [Division of Materials Science and Engineering, Ames Laboratory, Ames, Iowa 50011 (United States) [Division of Materials Science and Engineering, Ames Laboratory, Ames, Iowa 50011 (United States); Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States); McMillen, Colin D.; Kolis, Joseph [Department of Chemistry, Clemson University, Clemson, South Carolina 29634 (United States)] [Department of Chemistry, Clemson University, Clemson, South Carolina 29634 (United States); Giesber, Henry G.; Egan, John J. [Advanced Photonic Crystals LLC, Fort Mill, South Carolina 29708 (United States)] [Advanced Photonic Crystals LLC, Fort Mill, South Carolina 29708 (United States)

    2014-03-15

    We have developed an angle-resolved photoemission spectrometer with tunable vacuum ultraviolet laser as a photon source. The photon source is based on the fourth harmonic generation of a near IR beam from a Ti:sapphire laser pumped by a CW green laser and tunable between 5.3 eV and 7 eV. The most important part of the set-up is a compact, vacuum enclosed fourth harmonic generator based on potassium beryllium fluoroborate crystals, grown hydrothermally in the US. This source can deliver a photon flux of over 10{sup 14} photon/s. We demonstrate that this energy range is sufficient to measure the k{sub z} dispersion in an iron arsenic high temperature superconductor, which was previously only possible at synchrotron facilities.

  11. Swift-UVOT captures the earliest ultraviolet spectrum of a Gamma Ray Burst

    E-Print Network [OSTI]

    N. P. M. Kuin; W. B. Landsman; M. J. Page; P. Schady; M. Still; A. A. Breeveld; M. De Pasquale; P. J. Brown; M. Carter; C. James; P. A. Curran; A. Cucciara; C. Gronwall; S. T. Holland; E. A. Hoversten; S. Hunsberger; T. Kennedy; S. Koch; H. Lamoureux; F. E. Marshall; S. R. Oates; A. Parsons; D. Palmer; P. Roming; P. J. Smith

    2009-01-28

    We present the earliest ever ultraviolet spectrum of a gamma-ray burst (GRB) as observed with the Swift-UVOT. The GRB 081203A spectrum was observed for 50 seconds with the UV grism starting 251 seconds after the Swift-BAT trigger when the GRB was of u ~13.4 mag and still rising to its peak optical brightness. The UV grism spectrum shows a damped Ly-alpha line, Ly-beta, and the Lyman continuum break at a redshift z = 2.05 +/- 0.01. A model fit to the Lyman absorption implies log N(HI) = 22.0 +/- 0.2 cm-2, which is typical for GRB host galaxies with damped Ly-alpha absorbers. This observation of GRB 081203A demonstrates that for GRBs brighter than v ~14 mag and with 0.5 Swift-BAT trigger.

  12. Swift-UVOT captures the earliest ultraviolet spectrum of a Gamma Ray Burst

    E-Print Network [OSTI]

    Kuin, N P M; Page, M J; Schady, P; Still, M; Breeveld, A A; De Pasquale, M; Brown, P J; Carter, M; James, C; Curran, P A; Cucciara, A; Gronwall, C; Holland, S T; Hoversten, E; Hunsberger, S; Kennedy, T; Koch, S; Lamoureux, H; Marshall, F E; Oates, S R; Parsons, A; Palmer, D; Roming, P; Smith, P J

    2008-01-01

    We present the earliest ever ultraviolet spectrum of a gamma-ray burst (GRB) as observed with the Swift-UVOT. The spectrum of GRB 081203A was observed for 50 seconds with the UV grism starting 251 seconds after the Swift-BAT trigger when the GRB was of u ~13.4 mag and still rising to its peak optical brightness. The UV grism spectrum shows a damped Ly-alpha line, Ly-beta, and the Lyman continuum break at a redshift z = 2.05 +/- 0.01. A model fit to the Lyman absorption implies log N(HI) = 22.0 +/- 0.2 cm-2, which is typical for GRB host galaxies with damped Ly-alpha absorbers. This observation of GRB 081203A demonstrates that for GRBs brighter than v ~14 mag and with 0.5 Swift-BAT trigger.

  13. Origin of the Diffuse, Far Ultraviolet Emission in the Interarm Regions of M101

    E-Print Network [OSTI]

    Crocker, Alison F; Calzetti, Daniela; Holwerda, Benne Willem; Leitherer, Claus; Popescu, Cristina; Tuffs, R J

    2015-01-01

    We present images from the Solar Blind Channel on HST that resolve hundreds of far ultraviolet (FUV) emitting stars in two ~1 kpc$^2$ interarm regions of the grand-design spiral M101. The luminosity functions of these stars are compared with predicted distributions from simple star formation histories, and are best reproduced when the star formation rate has declined recently (past 10-50 Myr). This pattern is consistent with stars forming within spiral arms and then streaming into the interarm regions. We measure the diffuse FUV surface brightness after subtracting all of the detected stars, clusters and background galaxies. A residual flux is found for both regions which can be explained by a mix of stars below our detection limit and scattered FUV light. The amount of scattered light required is much larger for the region immediately adjacent to a spiral arm, a bright source of FUV photons.

  14. Ultraviolet stimulated electron source for use with low energy plasma instrument calibration

    E-Print Network [OSTI]

    Henderson, Kevin; Funsten, Herb; MacDonald, Elizabeth

    2011-01-01

    We report the development of a versatile, compact, low to medium energy electron source. A collimated, monoenergetic beam of electrons, up to 50 mm in diameter, is produced with energies ranging from 0.03 to 30 keV. A uniform electron beam profile is generated by illuminating a metal cathode plate with a near ultraviolet (UV) light emitting diode (LED). A parallel electric field accelerates the electrons away from the cathode plate towards a grounded grid. The beam intensity can be controlled from 10 - 10^9 electrons cm-2 s-1 and the angular divergence of the beam is less than 1 degree FWHM for energies greater than 1 keV.

  15. Ultraviolet stimulated electron source for use with low energy plasma instrument calibration

    SciTech Connect (OSTI)

    Henderson, Kevin; Harper, Ron; Funsten, Herb; MacDonald, Elizabeth [Space Science and Applications, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2012-07-15

    We have developed and demonstrated a versatile, compact electron source that can produce a mono-energetic electron beam up to 50 mm in diameter from 0.1 to 30 keV with an energy spread of <10 eV. By illuminating a metal cathode plate with a single near ultraviolet light emitting diode, a spatially uniform electron beam with 15% variation over 1 cm{sup 2} can be generated. A uniform electric field in front of the cathode surface accelerates the electrons into a beam with an angular divergence of <1 Degree-Sign at 1 keV. The beam intensity can be controlled from 10 to 10{sup 9} electrons cm{sup -2} s{sup -1}.

  16. Ionization avalanching in clusters ignited by extreme-ultraviolet driven seed electrons

    E-Print Network [OSTI]

    Schütte, Bernd; Mermillod-Blondin, Alexandre; Vrakking, Marc J J; Rouzée, Arnaud; Fennel, Thomas

    2015-01-01

    We study the ionization dynamics of Ar clusters exposed to ultrashort near-infrared (NIR) laser pulses for intensities well below the threshold at which tunnel ionization could ignite the nanoplasma formation. We find that the emission of highly charged ions up to Ar$^{8+}$ can be switched on with unit contrast by generating only a few seed electrons with an ultrashort extreme ultraviolet (XUV) pulse prior to the NIR field. Molecular dynamics simulations can explain the experimental observations and predict a generic scenario where efficient heating via inverse bremsstrahlung and NIR avalanching are followed by resonant collective nanoplasma heating. The temporally and spatially well-controlled injection of the XUV seed electrons opens new routes for controlling avalanching and heating phenomena in nanostructures and solids, with implications for both fundamental and applied laser-matter science.

  17. Colliding laser-produced plasmas as targets for laser-generated extreme ultraviolet sources

    SciTech Connect (OSTI)

    Cummins, T.; O'Gorman, C.; Dunne, P.; Sokell, E.; O'Sullivan, G. [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Hayden, P., E-mail: patrick.hayden@physics.org [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); School of Physical Sciences and National Centre for Plasma Science and Technology, Dublin City University, Glasnevin, Dublin 9 (Ireland)

    2014-07-28

    Colliding plasmas produced by neodymium-doped yttrium aluminium garnet (Nd:YAG) laser illumination of tin wedge targets form stagnation layers, the physical parameters of which can be controlled to optimise coupling with a carbon dioxide (CO{sub 2}) heating laser pulse and subsequent extreme ultraviolet (EUV) production. The conversion efficiency (CE) of total laser energy into EUV emission at 13.5?nm?±?1% was 3.6%. Neglecting both the energy required to form the stagnation layer and the EUV light produced before the CO{sub 2} laser pulse is incident results in a CE of 5.1% of the CO{sub 2} laser energy into EUV light.

  18. Bandgap measurements of low-k porous organosilicate dielectrics using vacuum ultraviolet irradiation

    SciTech Connect (OSTI)

    Zheng, H.; Shohet, J. L. [Plasma Processing and Technology Laboratory, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); King, S. W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); Ryan, V. [GLOBALFOUNDRIES, Albany, New York 12203 (United States); Nishi, Y. [Stanford University, Stanford, California 94305 (United States)

    2014-02-10

    Vacuum ultraviolet (VUV) photoemission spectroscopy is used to investigate the effect of VUV radiation on porous organosilicate (SiCOH) dielectrics during plasma processing. By comparing photoemission spectroscopic results before and after VUV exposure, VUV irradiation with photon energies less than 9.0?eV was found to be beneficial in depleting accumulated charge in SiCOH films while VUV photons with higher energies did not have this effect. Moreover, VUV irradiation with 8.9?eV photons depletes the most charge. From this result, it can be concluded that 8.9?eV is the bandgap plus the electron affinity energy of SiCOH dielectrics.

  19. Extreme Ultraviolet Imaging of Three-dimensional Magnetic Reconnection in a Solar Eruption

    E-Print Network [OSTI]

    Sun, J Q; Ding, M D; Guo, Y; Priest, E R; Parnell, C E; Edwards, S J; Zhang, J; Chen, P F; Fang, C

    2015-01-01

    Magnetic reconnection, a change of magnetic field connectivity, is a fundamental physical process in which magnetic energy is released explosively. It is responsible for various eruptive phenomena in the universe. However, this process is difficult to observe directly. Here, the magnetic topology associated with a solar reconnection event is studied in three dimensions (3D) using the combined perspectives of two spacecraft. The sequence of extreme ultraviolet (EUV) images clearly shows that two groups of oppositely directed and non-coplanar magnetic loops gradually approach each other, forming a separator or quasi-separator and then reconnecting. The plasma near the reconnection site is subsequently heated from $\\sim$1 to $\\ge$5 MK. Shortly afterwards, warm flare loops ($\\sim$3 MK) appear underneath the hot plasma. Other observational signatures of reconnection, including plasma inflows and downflows, are unambiguously revealed and quantitatively measured. These observations provide direct evidence of magneti...

  20. Enhancement of laser plasma extreme ultraviolet emission by shockwave-laser interaction

    SciTech Connect (OSTI)

    Bruijn, Rene de; Koshelev, Konstantin N.; Zakharov, Serguei V.; Novikov, Vladimir G.; Bijkerk, Fred [FOM Institute for Plasma Physics Rijnhuizen, P.O. Box 1207, 3430 BE Nieuwegein (Netherlands); EPPRA SAS, 16 Avenue de Quebec, Silic 706 Courtaboeuf, 91961 Villebon-sur-Yvette (France) and TRINITI RF SRC, Troitsk (Russian Federation); KIAM RAS, Miusskaya square 4, Moscow, 125047 (Russian Federation); FOM Institute for Plasma Physics Rijnhuizen, P.O. Box 1207, 3430 BE Nieuwegein (Netherlands)

    2005-04-15

    A double laser pulse heating scheme has been applied to generate plasmas with enhanced emission in the extreme ultraviolet (EUV). The plasmas were produced by focusing two laser beams (prepulse and main pulse) with a small spatial separation between the foci on a xenon gas jet target. Prepulses with ps-duration were applied to obtain high shockwave densities, following indications of earlier published results obtained using ns prepulses. EUV intensities around 13.5 nm and in the range 5-20 nm were recorded, and a maximum increase in intensity exceeding 2 was measured at an optimal delay of 140 ns between prepulse and main pulse. The gain in intensity is explained by the interaction of the shockwave produced by the prepulse with the xenon in the beam waist of the main pulse. Extensive simulation was done using the radiative magnetohydrodynamic code Z{sup *}.

  1. Injection locking of a high power ultraviolet laser diode for laser cooling of ytterbium atoms

    E-Print Network [OSTI]

    Toshiyuki Hosoya; Martin Miranda; Ryotaro Inoue; Mikio Kozuma

    2014-12-02

    We developed a high-power laser system at a wavelength of 399 nm for laser cooling of ytterbium atoms with ultraviolet laser diodes. The system is composed of an external cavity laser diode providing frequency stabilized output at a power of 40 mW and another laser diode for amplifying the laser power up to 220 mW by injection locking. The systematic method for optimization of our injection locking can also be applied to high power light sources at any other wavelengths. Our system, which does not depend on complex nonlinear frequency-doubling, has great importance for implementing transportable optical lattice clocks, and is also useful for investigations on condensed matter physics or quantum information processing using cold atoms.

  2. Fluorescence Efficiency and Visible Re-emission Spectrum of Tetraphenyl Butadiene Films at Extreme Ultraviolet Wavelengths

    E-Print Network [OSTI]

    Gehman, V M; Rielage, K; Hime, A; Sun, Y; Mei, D -M; Maassen, J; Moore, D

    2011-01-01

    A large number of current and future experiments in neutrino and dark matter detection use the scintillation light from noble elements as a mechanism for measuring energy deposition. The scintillation light from these elements is produced in the extreme ultraviolet (EUV) range, from 60 - 200 nm. Currently, the most practical technique for observing light at these wavelengths is to surround the scintillation volume with a thin film of Tetraphenyl Butadiene (TPB) to act as a fluor. The TPB film absorbs EUV photons and reemits visible photons, detectable with a variety of commercial photosensors. Here we present a measurement of the re-emission spectrum of TPB films when illuminated with 128, 160, 175, and 250 nm light. We also measure the fluorescence efficiency as a function of incident wavelength from 120 to 250 nm.

  3. Fluorescence Efficiency and Visible Re-emission Spectrum of Tetraphenyl Butadiene Films at Extreme Ultraviolet Wavelengths

    E-Print Network [OSTI]

    V. M. Gehman; S. R. Seibert; K. Rielage; A. Hime; Y. Sun; D. -M. Mei; J. Maassen; D. Moore

    2011-09-22

    A large number of current and future experiments in neutrino and dark matter detection use the scintillation light from noble elements as a mechanism for measuring energy deposition. The scintillation light from these elements is produced in the extreme ultraviolet (EUV) range, from 60 - 200 nm. Currently, the most practical technique for observing light at these wavelengths is to surround the scintillation volume with a thin film of Tetraphenyl Butadiene (TPB) to act as a fluor. The TPB film absorbs EUV photons and reemits visible photons, detectable with a variety of commercial photosensors. Here we present a measurement of the re-emission spectrum of TPB films when illuminated with 128, 160, 175, and 250 nm light. We also measure the fluorescence efficiency as a function of incident wavelength from 120 to 250 nm.

  4. Far-ultraviolet observations of comet C/2001 Q4 (NEAT) with FIMS/SPEAR

    SciTech Connect (OSTI)

    Lim, Y.-M.; Min, K.-W. [Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Feldman, P. D. [Department of Physics and Astronomy, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218 (United States); Han, W. [Korea Astronomy and Space Science Institute (KASI), 776 Daedeokdae-ro, Yuseong-gu, Daejeon 305-348 (Korea, Republic of); Edelstein, J., E-mail: ymlim@kaist.ac.kr [Space Sciences Laboratory, University of California, Berkeley, 7 Gauss Way, Berkeley, CA 94720 (United States)

    2014-02-01

    We present the results of far-ultraviolet observations of comet C/2001 Q4 (NEAT) that were made with the Far-Ultraviolet Imaging Spectrograph on board the Korean satellite STSAT-1. The observations were conducted in two campaigns during its perihelion approach between 2004 May 8 and 15. Based on the scanning mode observations in the wavelength band of 1400-1700 Å, we have constructed an image of the comet with an angular size of 5°×5°, which corresponds to the central coma region. Several important fluorescence emission lines were detected including S I multiplets at 1429 and 1479 Å, C I multiplets at 1561 and 1657 Å, and the CO A{sup 1}?-X{sup 1}?{sup +} Fourth Positive system; we have estimated the production rates of the corresponding species from the fluxes of these emission lines. The estimated production rate of CO was Q {sub CO} = (2.65 ± 0.63) × 10{sup 28} s{sup –1}, which is 6.2%-7.4% of the water production rate and is consistent with earlier predictions. The average carbon production rate was estimated to be Q{sub C} = ?1.59 × 10{sup 28} s{sup –1}, which is ?60% of the CO production rate. However, the observed carbon profile was steeper than that predicted using the two-component Haser model in the inner coma region, while it was consistent with the model in the outer region. The average sulfur production rate was Q{sub S} = (4.03±1.03) × 10{sup 27} s{sup –1}, which corresponds to ?1% of the water production rate.

  5. THE HIGH-RESOLUTION EXTREME-ULTRAVIOLET SPECTRUM OF N{sub 2} BY ELECTRON IMPACT

    SciTech Connect (OSTI)

    Heays, A. N.; Ajello, J. M.; Aguilar, A.; Lewis, B. R.; Gibson, S. T.

    2014-04-01

    We have analyzed high-resolution (FWHM = 0.2 Å) extreme-ultraviolet (EUV, 800-1350 Å) laboratory emission spectra of molecular nitrogen excited by an electron impact at 20 and 100 eV under (mostly) optically thin, single-scattering experimental conditions. A total of 491 emission features were observed from N{sub 2} electronic-vibrational transitions and atomic N I and N II multiplets and their emission cross sections were measured. Molecular emission was observed at vibrationally excited ground-state levels as high as v'' = 17, from the a {sup 1}? {sub g} , b {sup 1}? {sub u} , and b'{sup 1}? {sub u} {sup +} excited valence states and the Rydberg series c'{sub n} {sub +1} {sup 1}? {sub u} {sup +}, c{sub n} {sup 1}? {sub u} , and o{sub n} {sup 1}? {sub u} for n between 3 and 9. The frequently blended molecular emission bands were disentangled with the aid of a sophisticated and predictive quantum-mechanical model of excited states that includes the strong coupling between valence and Rydberg electronic states and the effects of predissociation. Improved model parameters describing electronic transition moments were obtained from the experiment and allowed for a reliable prediction of the vibrationally summed electronic emission cross section, including an extrapolation to unobserved emission bands and those that are optically thick in the experimental spectra. Vibrationally dependent electronic excitation functions were inferred from a comparison of emission features following 20 and 100 eV electron-impact collisional excitation. The electron-impact-induced fluorescence measurements are compared with Cassini Ultraviolet Imaging Spectrograph observations of emissions from Titan's upper atmosphere.

  6. Interferometric at-wavelength flare characterization of EUV optical systems

    DOE Patents [OSTI]

    Naulleau, Patrick P. (Oakland, CA); Goldberg, Kenneth Alan (Berkeley, CA)

    2001-01-01

    The extreme ultraviolet (EUV) phase-shifting point diffraction interferometer (PS/PDI) provides the high-accuracy wavefront characterization critical to the development of EUV lithography systems. Enhancing the implementation of the PS/PDI can significantly extend its spatial-frequency measurement bandwidth. The enhanced PS/PDI is capable of simultaneously characterizing both wavefront and flare. The enhanced technique employs a hybrid spatial/temporal-domain point diffraction interferometer (referred to as the dual-domain PS/PDI) that is capable of suppressing the scattered-reference-light noise that hinders the conventional PS/PDI. Using the dual-domain technique in combination with a flare-measurement-optimized mask and an iterative calculation process for removing flare contribution caused by higher order grating diffraction terms, the enhanced PS/PDI can be used to simultaneously measure both figure and flare in optical systems.

  7. EUV light source with high brightness at 13.5 nm

    SciTech Connect (OSTI)

    Borisov, V M; Prokof'ev, A V; Khristoforov, O B [State Research Center of Russian Federation 'Troitsk Institute for Innovation and Fusion Research', Troitsk, Moscow Region (Russian Federation); Koshelev, K N [Institute of Spectroscopy, Russian Academy of Sciences, Troitsk, Moscow (Russian Federation); Khadzhiyskiy, F Yu [EUV Labs, Ltd., Troitsk, Moscow (Russian Federation)

    2014-11-30

    The results of the studies on the development of a highbrightness radiation source in the extreme ultraviolet (EUV) range are presented. The source is intended for using in projection EUV lithography, EUV mask inspection, for the EUV metrology, etc. Novel approaches to creating a light source on the basis of Z-pinch in xenon allowed the maximal brightness [130 W(mm{sup 2} sr){sup -1}] to be achieved in the vicinity of plasma for this type of radiation sources within the 2% spectral band centred at the wavelength of 13.5 nm that corresponds to the maximal reflection of multilayer Mo/Si mirrors. In this spectral band the radiation power achieves 190 W in the solid angle of 2? at a pulse repetition rate of 1.9 kHz and an electric power of 20 kW, injected into the discharge. (laser applications and other topics in quantum electronics)

  8. CHARACTERIZING ULTRAVIOLET AND INFRARED OBSERVATIONAL PROPERTIES FOR GALAXIES. I. INFLUENCES OF DUST ATTENUATION AND STELLAR POPULATION AGE

    SciTech Connect (OSTI)

    Mao Yewei; Kong Xu [Center for Astrophysics, University of Science and Technology of China, Hefei 230026 (China); Kennicutt, Robert C. Jr. [Institute of Astronomy, University of Cambridge, Madingley Road, Cambridge, CB3 0HA (United Kingdom); Hao, Cai-Na [Tianjin Astrophysics Center, Tianjin Normal University, Tianjin 300387 (China); Zhou Xu, E-mail: owen81@mail.ustc.edu.cn, E-mail: xkong@ustc.edu.cn [National Astronomical Observatories, Chinese Academy of Sciences, Beijing 100012 (China)

    2012-09-20

    The correlation between infrared-to-ultraviolet luminosity ratio and ultraviolet color (or ultraviolet spectral slope), i.e., the IRX-UV (or IRX-{beta}) relation, found in studies of starburst galaxies is a prevalent recipe for correcting extragalactic dust attenuation. Considerable dispersion in this relation discovered for normal galaxies, however, complicates its usability. In order to investigate the cause of the dispersion and to have a better understanding of the nature of the IRX-UV relation, in this paper, we select five nearby spiral galaxies, and perform spatially resolved studies on each of the galaxies, with a combination of ultraviolet and infrared imaging data. We measure all positions within each galaxy and divide the extracted regions into young and evolved stellar populations. By means of this approach, we attempt to discover separate effects of dust attenuation and stellar population age on the IRX-UV relation for individual galaxies. In this work, in addition to dust attenuation, stellar population age is interpreted to be another parameter in the IRX-UV function, and the diversity of star formation histories is suggested to disperse the age effects. At the same time, strong evidence shows the need for more parameters in the interpretation of observational data, such as variations in attenuation/extinction law. Fractional contributions of different components to the integrated luminosities of the galaxies suggest that the integrated measurements of these galaxies, which comprise different populations, would weaken the effect of the age parameter on IRX-UV diagrams. The dependence of the IRX-UV relation on luminosity and radial distance in galaxies presents weak trends, which offers an implication of selective effects. The two-dimensional maps of the UV color and the infrared-to-ultraviolet ratio are displayed and show a disparity in the spatial distributions between the two galaxy parameters, which offers a spatial interpretation of the scatter in the IRX-UV relation.

  9. Masked-backlighter technique used to simultaneously image x-ray absorption and x-ray emission from an inertial confinement fusion plasma

    SciTech Connect (OSTI)

    Marshall, F. J., E-mail: fredm@lle.rochester.edu; Radha, P. B. [Laboratory for Laser Energetics, University of Rochester, Rochester, New York 14623 (United States)

    2014-11-15

    A method to simultaneously image both the absorption and the self-emission of an imploding inertial confinement fusion plasma has been demonstrated on the OMEGA Laser System. The technique involves the use of a high-Z backlighter, half of which is covered with a low-Z material, and a high-speed x-ray framing camera aligned to capture images backlit by this masked backlighter. Two strips of the four-strip framing camera record images backlit by the high-Z portion of the backlighter, while the other two strips record images aligned with the low-Z portion of the backlighter. The emission from the low-Z material is effectively eliminated by a high-Z filter positioned in front of the framing camera, limiting the detected backlighter emission to that of the principal emission line of the high-Z material. As a result, half of the images are of self-emission from the plasma and the other half are of self-emission plus the backlighter. The advantage of this technique is that the self-emission simultaneous with backlighter absorption is independently measured from a nearby direction. The absorption occurs only in the high-Z backlit frames and is either spatially separated from the emission or the self-emission is suppressed by filtering, or by using a backlighter much brighter than the self-emission, or by subtraction. The masked-backlighter technique has been used on the OMEGA Laser System to simultaneously measure the emission profiles and the absorption profiles of polar-driven implosions.

  10. NANO-ELECTROMECHANICAL ZERO-DIMENSIONAL FREESTANDING NANOGAP ACTUATOR

    E-Print Network [OSTI]

    Afshari, Ehsan

    -beam lithography [7], mechanical pulling [8], shadow masking [9], electromigration [10], electroplating [11 the metal coated tips can be 978-1-4244-9633-4/11/$26.00 ©2011 IEEE 1357 MEMS 2011, Cancun, MEXICO, January

  11. Could the Earth's surface Ultraviolet irradiance be blamed for the global warming? A new effect may exist

    E-Print Network [OSTI]

    Chen, Jilong; Zhao, Juan; Zheng, Yujun

    2014-01-01

    Whether natural factors could interpret the rise of the Earth's surface temperature is still controversial. Though numerous recent researches have reported apparent correlations between solar activity and the Earth's climate, solar activity has encountered a big problem when describing the rapid global warming after 1970s. Our investigation shows the good positive correlations between the Earth's surface Ultraviolet irradiance (280-400 nm) and the Earth's surface temperature both in temporal and spatial variations by analyzing the global surface Ultraviolet irradiance (280-400 nm) and global surface temperature data from 1980-1999. The rise of CO$_2$ cannot interpret the good positive correlations, and we could even get an opposite result to the good correlations when employing the rise of CO$_2$ to describe the relation between them. Based on the good positive correlations, we suggest a new effect, named "Highly Excited Water Vapor" (HEWV) effect, which can interpret how the Sun influences the Earth's surfac...

  12. The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

    SciTech Connect (OSTI)

    Gaddy, BE; Bryan, Z; Bryan, I; Xie, JQ; Dalmau, R; Moody, B; Kumagai, Y; Nagashima, T; Kubota, Y; Kinoshita, T; Koukitu, A; Kirste, R; Sitar, Z; Collazo, R; Irving, DL

    2014-05-19

    Co-doping AlN crystals with Si is found to suppress the unwanted 4.7 eV (265 nm) deep ultraviolet absorption associated with isolated carbon acceptors common in materials grown by physical vapor transport. Density functional theory calculations with hybrid functionals demonstrate that silicon forms a stable nearest-neighbor defect complex with carbon. This complex is predicted to absorb at 5.5 eV and emit at or above 4.3 eV. Absorption and photoluminescence measurements of co-doped samples confirm the presence of the predicted C-N-Si-Al complex absorption and emission peaks and significant reduction of the 4.7 eV absorption. Other sources of deep ultraviolet absorption in AlN are also discussed. (C) 2014 AIP Publishing LLC.

  13. Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode

    SciTech Connect (OSTI)

    Kang, Jang-Won; Choi, Yong-Seok; Goo Kang, Chang; Hun Lee, Byoung [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Kim, Byeong-Hyeok [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407 (United States); Park, Seong-Ju, E-mail: sjpark@gist.ac.kr [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

    2014-02-03

    We report on ultraviolet emission from a multi-layer graphene (MLG)/MgZnO/ZnO light-emitting diodes (LED). The p-type MLG and MgZnO in the MLG/MgZnO/ZnO LED are used as transparent hole injection and electron blocking layers, respectively. The current-voltage characteristics of the MLG/MgZnO/ZnO LED show that current transport is dominated by tunneling processes in the MgZnO barrier layer under forward bias conditions. The holes injected from p-type MLG recombine efficiently with the electrons accumulated in ZnO, and the MLG/MgZnO/ZnO LED shows strong ultraviolet emission from the band edge of ZnO and weak red-orange emission from the deep levels of ZnO.

  14. Doubly-Resonant Fabry-Perot Cavity for Power Enhancement of Burst-Mode Picosecond Ultraviolet Pulses

    SciTech Connect (OSTI)

    Abudureyimu, Reheman [ORNL; Huang, Chunning [ORNL; Liu, Yun [ORNL

    2015-01-01

    We report on a first experimental demonstration of locking a doubly-resonant Fabry-Perot cavity to burst-mode picosecond ultraviolet (UV) pulses by using a temperature controlled dispersion compensation method. This technique will eventually enable the intra cavity power enhancement of burst-mode 402.5MHz/50ps UV laser pulses with a MW level peak power required for the laser assisted H- beam stripping experiment at the Spallation Neutron Source.

  15. Removal of pollutant compounds from water supplies using ozone, ultraviolet light, and a counter, current packed column. Master's thesis

    SciTech Connect (OSTI)

    Kelly, E.L.

    1991-01-01

    Many water pollutants are determined to be carcinogenic and often appear in very low concentrations and still pose a health risk. Conventional water treatment processes cannot remove these contaminants and there is a great demand for the development of alternative removal technologies. The use of ozone and ultraviolet light in a counter current packed column could prove to be an effective treatment process to remove these contaminants.

  16. The effective spectral irradiance of ultra-violet radiations from inert-gas-shielded welding processes in relation to the ARC current density 

    E-Print Network [OSTI]

    DeVore, Robin Kent

    1973-01-01

    fulfillment of the requirement for the degree of MASTER OF SCIENCE December 1973 Major Subject: Industrial Hygiene THE EFFECTIVE SPECTRAL IRRADIANCE OF ULTRAVIOLET RADIATIONS FROM INERT-GAS-SHIELDED WELDING PROCESSES IN RELATION TO THE ARC CURRENT... DENSITY A Thesis by ROBIN KENT DEVORE Approved as to style and content by: C alarm n of o itte Hea o partment e er Member December 1973 ABSTRACT The Effective Spectral Irradiance of Ultraviolet Radiations from Inert-Gas-Shielded Welding...

  17. Ultraviolet germicidal irradiation and its effects on elemental distributions in mouse embryonic fibroblast cells in x-ray fluorescence microanalysis

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jin, Qiaoling; Vogt, Stefan; Lai, Barry; Chen, Si; Finney, Lydia; Gleber, Sophie-Charlotte; Ward, Jesse; Deng, Junjing; Mak, Rachel; Moonier, Nena; et al

    2015-02-23

    Rapidly-frozen hydrated (cryopreserved) specimens combined with cryo-scanning x-ray fluorescence microscopy provide an ideal approach for investigating elemental distributions in biological cells and tissues. However, because cryopreservation does not deactivate potentially infectious agents associated with Risk Group 2 biological materials, one must be concerned with contamination of expensive and complicated cryogenic x-ray microscopes when working with such materials. We employed ultraviolet germicidal irradiation to decontaminate previously cryopreserved cells under liquid nitrogen, and then investigated its effects on elemental distributions under both frozen hydrated and freeze dried states with x-ray fluorescence microscopy. We show that the contents and distributions of most biologicallymore »important elements remain nearly unchanged when compared with non-ultraviolet-irradiated counterparts, even after multiple cycles of ultraviolet germicidal irradiation and cryogenic x-ray imaging. This provides a potential pathway for rendering Risk Group 2 biological materials safe for handling in multiuser cryogenic x-ray microscopes without affecting the fidelity of the results.« less

  18. Ultraviolet germicidal irradiation and its effects on elemental distributions in mouse embryonic fibroblast cells in x-ray fluorescence microanalysis

    SciTech Connect (OSTI)

    Jin, Qiaoling; Vogt, Stefan; Lai, Barry; Chen, Si; Finney, Lydia; Gleber, Sophie-Charlotte; Ward, Jesse; Deng, Junjing; Mak, Rachel; Moonier, Nena; Jacobsen, Chris; Brody, James P.

    2015-02-23

    Rapidly-frozen hydrated (cryopreserved) specimens combined with cryo-scanning x-ray fluorescence microscopy provide an ideal approach for investigating elemental distributions in biological cells and tissues. However, because cryopreservation does not deactivate potentially infectious agents associated with Risk Group 2 biological materials, one must be concerned with contamination of expensive and complicated cryogenic x-ray microscopes when working with such materials. We employed ultraviolet germicidal irradiation to decontaminate previously cryopreserved cells under liquid nitrogen, and then investigated its effects on elemental distributions under both frozen hydrated and freeze dried states with x-ray fluorescence microscopy. We show that the contents and distributions of most biologically important elements remain nearly unchanged when compared with non-ultraviolet-irradiated counterparts, even after multiple cycles of ultraviolet germicidal irradiation and cryogenic x-ray imaging. This provides a potential pathway for rendering Risk Group 2 biological materials safe for handling in multiuser cryogenic x-ray microscopes without affecting the fidelity of the results.

  19. High-performance deep ultraviolet photodetectors based on ZnO quantum dot assemblies

    SciTech Connect (OSTI)

    Xu, Xiaoyong; Xu, Chunxiang E-mail: jghu@yzu.edu.cn; Hu, Jingguo E-mail: jghu@yzu.edu.cn

    2014-09-14

    A high-performance ZnO quantum dots (QDs)-based ultraviolet (UV) photodetector has been successfully fabricated via the self-assembly of QDs on the Au interdigital electrode. The broadened band gap in ZnO QDs makes the device has the highly selective response for the deep UV detection. The unique QD-QD junction barriers similar to back-to-back Schottky barriers dominate the conductance of the QD network and the UV light-induced barrier-height modulation plays a crucial role in enhancing the photoresponsivity and the response speed. Typically, the as-fabricated device exhibits the fast response and recovery times of within 1 s, the deep UV selectivity of less than 340 nm, and the stable repeatability with on/off current ratio over 10³, photoresponsivity of 5.04×10²A/W, and photocurrent gain of 1.9×10³, demonstrating that the ZnO QD network is a superior building block for deep UV photodetectors.

  20. Resonantly enhanced method for generation of tunable, coherent vacuum-ultraviolet radiation

    DOE Patents [OSTI]

    Glownia, J.H.; Sander, R.K.

    1982-06-29

    Carbon Monoxide vapor is used to generate coherent, tunable vacuum ultraviolet radiation by third-harmonic generation using a single tunable dye laser. The presence of a nearby electronic level resonantly enhances the nonlinear susceptibility of this molecule allowing efficient generation of the vuv light at modest pump laser intensities, thereby reducing the importance of a six-photon multiple-photon ionization process which is also resonantly enhanced by the same electronic level but no higher order. By choosing the pump radiation wavelength to be of shorter wavelength than individual vibronic levels used to extend tunability stepwise from 154.4 to 124.6 nm, and the intensity to be low enough, multiple-photon ionization can be eliminated. Excitation spectra of the third-harmonic emission output exhibit shifts to shorter wavelength and broadening with increasing CO pressure due to phase matching effects. Increasing the carbon monoxide pressure, therefore, allows the substantial filling in of gaps arising from the stepwise tuning thereby providing almost continuous tunability over the quoted range of wavelength emitted.

  1. Resonantly enhanced method for generation of tunable, coherent vacuum ultraviolet radiation

    DOE Patents [OSTI]

    Glownia, James H. (Los Alamos, NM); Sander, Robert K. (Los Alamos, NM)

    1985-01-01

    Carbon Monoxide vapor is used to generate coherent, tunable vacuum ultraviolet radiation by third-harmonic generation using a single tunable dye laser. The presence of a nearby electronic level resonantly enhances the nonlinear susceptibility of this molecule allowing efficient generation of the vuv light at modest pump laser intensities, thereby reducing the importance of a six-photon multiple-photon ionization process which is also resonantly enhanced by the same electronic level but to higher order. By choosing the pump radiation wavelength to be of shorter wavelength than individual vibronic levels used to extend tunability stepwise from 154.4 to 124.6 nm, and the intensity to be low enough, multiple-photon ionization can be eliminated. Excitation spectra of the third-harmonic emission output exhibit shifts to shorter wavelength and broadening with increasing CO pressure due to phase matching effects. Increasing the carbon monoxide pressure, therefore, allows the substantial filling in of gaps arising from the stepwise tuning thereby providing almost continuous tunability over the quoted range of wavelength emitted.

  2. Control of the polarization of a vacuum-ultraviolet, high-gain, free-electron laser

    SciTech Connect (OSTI)

    Allaria, Enrico; Diviacco, Bruno; Callegari, Carlo; Finetti, Paola; Mahieu, Benoît; Viefhaus, Jens; Zangrando, Marco; De Ninno, Giovanni; Lambert, Guillaume; Ferrari, Eugenio; Buck, Jens; Ilchen, Markus; Vodungbo, Boris; Mahne, Nicola; Svetina, Cristian; Spezzani, Carlo; Di Mitri, Simone; Penco, Giuseppe; Trovó, Mauro; Fawley, William M.; Rebernik, Primoz R.; Gauthier, David; Grazioli, Cesare; Coreno, Marcello; Ressel, Barbara; Kivimäki, Antti; Mazza, Tommaso; Glaser, Leif; Scholz, Frank; Seltmann, Joern; Gessler, Patrick; Grünert, Jan; De Fanis, Alberto; Meyer, Michael; Knie, André; Moeller, Stefan P.; Raimondi, Lorenzo; Capotondi, Flavio; Pedersoli, Emanuele; Plekan, Oksana; Danailov, Miltcho B.; Demidovich, Alexander; Nikolov, Ivaylo; Abrami, Alessandro; Gautier, Julien; Lüning, Jan; Zeitoun, Philippe; Giannessi, Luca

    2014-12-02

    The two single-pass, externally seeded free-electron lasers (FELs) of the FERMI user facility are designed around Apple-II-type undulators that can operate at arbitrary polarization in the vacuum ultraviolet-to-soft x-ray spectral range. Furthermore, within each FEL tuning range, any output wavelength and polarization can be set in less than a minute of routine operations. We report the first demonstration of the full output polarization capabilities of FERMI FEL-1 in a campaign of experiments where the wavelength and nominal polarization are set to a series of representative values, and the polarization of the emitted intense pulses is thoroughly characterized by three independent instruments and methods, expressly developed for the task. The measured radiation polarization is consistently >90% and is not significantly spoiled by the transport optics; differing, relative transport losses for horizontal and vertical polarization become more prominent at longer wavelengths and lead to a non-negligible ellipticity for an originally circularly polarized state. The results from the different polarimeter setups validate each other, allow a cross-calibration of the instruments, and constitute a benchmark for user experiments.

  3. HST/STIS Ultraviolet Spectroscopy of the Components of the Massive Triple Star delta Ori A

    E-Print Network [OSTI]

    Richardson, Noel D; Gull, Theodore R; Lindler, Don J; Gies, Douglas R; Corcoran, Michael F; Chené, André-Nicolas

    2015-01-01

    The multiple star system of delta Orionis is one of the closest examples of a system containing a luminous O-type, bright giant star (component Aa1). It is often used as a spectral-type standard and has the highest observed X-ray flux of any hot-star binary. The main component Aa1 is orbited by two lower mass stars, faint Aa2 in a 5.7 day eclipsing binary, and Ab, an astrometric companion with an estimated period of 346 years. Generally the flux from all three stars is recorded in ground-based spectroscopy, and the spectral decomposition of the components has proved difficult. Here we present HST/STIS ultraviolet spectroscopy of delta Ori A that provides us with spatially separated spectra of Aa and Ab for the first time. We measured radial velocities for Aa1 and Ab in two observations made near the velocity extrema of Aa1. We show tentative evidence for the detection of the Aa2 component in cross-correlation functions of the observed and model spectra. We discuss the appearance of the UV spectra of Aa1 and A...

  4. THE NEAR-ULTRAVIOLET LUMINOSITY FUNCTION OF YOUNG, EARLY M-TYPE DWARF STARS

    SciTech Connect (OSTI)

    Ansdell, Megan; Baranec, Christoph; Gaidos, Eric; Mann, Andrew W.; Lépine, Sebastien; James, David; Buccino, Andrea; Mauas, Pablo; Petrucci, Romina; Law, Nicholas M.; Riddle, Reed

    2015-01-01

    Planets orbiting within the close-in habitable zones of M dwarf stars will be exposed to elevated high-energy radiation driven by strong magnetohydrodynamic dynamos during stellar youth. Near-ultraviolet (NUV) irradiation can erode and alter the chemistry of planetary atmospheres, and a quantitative description of the evolution of NUV emission from M dwarfs is needed when modeling these effects. We investigated the NUV luminosity evolution of early M-type dwarfs by cross-correlating the Lépine and Gaidos catalog of bright M dwarfs with the Galaxy Evolution Explorer (GALEX) catalog of NUV (1771-2831 Å) sources. Of the 4805 sources with GALEX counterparts, 797 have NUV emission significantly (>2.5?) in excess of an empirical basal level. We inspected these candidate active stars using visible-wavelength spectra, high-resolution adaptive optics imaging, time-series photometry, and literature searches to identify cases where the elevated NUV emission is due to unresolved background sources or stellar companions; we estimated the overall occurrence of these ''false positives'' (FPs) as ?16%. We constructed an NUV luminosity function that accounted for FPs, detection biases of the source catalogs, and GALEX upper limits. We found the NUV luminosity function to be inconsistent with predictions from a constant star-formation rate and simplified age-activity relation defined by a two-parameter power law.

  5. Control of the polarization of a vacuum-ultraviolet, high-gain, free-electron laser

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Allaria, Enrico; Diviacco, Bruno; Callegari, Carlo; Finetti, Paola; Mahieu, Benoît; Viefhaus, Jens; Zangrando, Marco; De Ninno, Giovanni; Lambert, Guillaume; Ferrari, Eugenio; et al

    2014-12-02

    The two single-pass, externally seeded free-electron lasers (FELs) of the FERMI user facility are designed around Apple-II-type undulators that can operate at arbitrary polarization in the vacuum ultraviolet-to-soft x-ray spectral range. Furthermore, within each FEL tuning range, any output wavelength and polarization can be set in less than a minute of routine operations. We report the first demonstration of the full output polarization capabilities of FERMI FEL-1 in a campaign of experiments where the wavelength and nominal polarization are set to a series of representative values, and the polarization of the emitted intense pulses is thoroughly characterized by three independentmore »instruments and methods, expressly developed for the task. The measured radiation polarization is consistently >90% and is not significantly spoiled by the transport optics; differing, relative transport losses for horizontal and vertical polarization become more prominent at longer wavelengths and lead to a non-negligible ellipticity for an originally circularly polarized state. The results from the different polarimeter setups validate each other, allow a cross-calibration of the instruments, and constitute a benchmark for user experiments.« less

  6. An analysis of ultraviolet spectra of Extreme Helium Stars and new clues to their origins

    E-Print Network [OSTI]

    Pandey, G; Jeffery, C S; Rao, N K; Pandey, Gajendra; Lambert, David L.

    2006-01-01

    Abundances of about 18 elements including the heavy elements Y and Zr are determined from Hubble Space Telescope Space Telescope Imaging Spectrograph ultraviolet spectra of seven extreme helium stars (EHes): LSE 78, BD+10 2179, V1920 Cyg, HD 124448, PV Tel, LS IV -1 2, and FQ Aqr. New optical spectra of the three stars -- BD+10 2179, V1920 Cyg, and HD 124448 were analysed. The abundance analyses is done using LTE line formation and LTE model atmospheres especially constructed for these EHe stars. The stellar parameters derived from an EHe's UV spectrum are in satisfactory agreement with those derived from its optical spectrum. Adopted abundances for the seven EHes are from a combination of the UV and optical analyses. Published results for an additional ten EHes provide abundances obtained in a nearly uniform manner for a total of 17 EHes, the largest sample on record. The initial metallicity of an EHe is indicated by the abundance of elements from Al to Ni; Fe is adopted to be the representative of initial m...

  7. Soft x ray/extreme ultraviolet images of the solar atmosphere with normal incidence multilayer optics

    SciTech Connect (OSTI)

    Lindblom, J.F.

    1990-01-01

    The first high resolution Soft X-Ray/Extreme Ultraviolet (XUV) images of the Sun with normal incidence multilayer optics were obtained by the Standford/MSFC Rocket X-Ray Spectroheliograph on 23 Oct. 1987. Numerous images at selected wavelengths from 8 to 256 A were obtained simultaneously by the diverse array of telescopes flown on-board the experiment. These telescopes included single reflection normal incidence multilayer systems (Herschelian), double reflection multilayer systems (Cassegrain), a grazing incidence mirror system (Wolter-Schwarzschild), and hybrid systems using normal incidence multilayer optics in conjunction with the grazing incidence primary (Wolter-Cassegrain). Filters comprised of approximately 1700{Angstrom} thick aluminum supported on a nickel mesh were used to transmit the soft x ray/EUV radiation while preventing the intense visible light emission of the Sun from fogging the sensitive experimental T-grain photographic emulsions. These systems yielded high resolution soft x ray/EUV images of the solar corona and transition region, which reveal magnetically confined loops of hot solar plasma, coronal plumes, polar coronal holes, supergranulation, and features associated with overlying cool prominences. The development, testing, and operation of the experiments, and the results from the flight are described. The development of a second generation experiment, the Multi-Spectral Solar Telescope Array, which is scheduled to fly in the summer of 1990, and a recently approved Space Station experiment, the Ultra-High Resolution XUV Spectroheliograph, which is scheduled to fly in 1996 are also described.

  8. Thermal characteristics and durability of sealed insulated glass units incorporating muntin bars under ultraviolet exposure

    SciTech Connect (OSTI)

    Elmahdy, A.H. [National Research Council of Canada, Ottawa, Ontario (Canada). Inst. for Research in Construction

    1998-10-01

    Recent developments in glazing manufacturing have resulted in the introduction of a variety of glazing systems to meet the consumers demand and, in many cases, with better thermal performance than conventional glazing. Insulating glass (IG) units are now available where air is replaced with argon and other heavy gases (or mixtures of gases), low emissivity coatings on glass or plastic films, and muntin bars in the cavity between the sheets of glass. Muntin bars are made of various materials such as aluminum (anodized or painted), vinyl, or silicone foam. Although muntin bars are used for aesthetic reasons, they may cause adverse effects on the IG units performance, which may be attributed to the improper preparation of the muntin bars or the use of interior paints. Ultraviolet (fogging) tests were performed on a number of argon-filled IG units with and without muntin bars. The test results indicate that most of the IG units with muntin bars fail the UV test when viewed at off-angle. Meanwhile, when viewed at right angle, most of the IG units with muntin bars passed the UV test. Test results also showed that the R-value and condensation resistance of IG units with muntin bars are 4% to 7% lower than those units without muntin bars. The thermal bridging effect of the muntin bars contribute to the lower glass surface temperature in the area adjacent to the muntin bars.

  9. Extreme ultraviolet emission and confinement of tin plasmas in the presence of a magnetic field

    SciTech Connect (OSTI)

    Roy, Amitava E-mail: aroy@barc.gov.in; Murtaza Hassan, Syed; Harilal, Sivanandan S.; Hassanein, Ahmed; Endo, Akira; Mocek, Tomas

    2014-05-15

    We investigated the role of a guiding magnetic field on extreme ultraviolet (EUV) and ion emission from a laser produced Sn plasma for various laser pulse duration and intensity. For producing plasmas, planar slabs of pure Sn were irradiated with 1064?nm, Nd:YAG laser pulses with varying pulse duration (5–15?ns) and intensity. A magnetic trap was fabricated with the use of two neodymium permanent magnets which provided a magnetic field strength ?0.5?T along the plume expansion direction. Our results indicate that the EUV conversion efficiency do not depend significantly on applied axial magnetic field. Faraday Cup ion analysis of Sn plasma show that the ion flux reduces by a factor of ?5 with the application of an axial magnetic field. It was found that the plasma plume expand in the lateral direction with peak velocity measured to be ?1.2?cm/?s and reduced to ?0.75?cm/?s with the application of an axial magnetic field. The plume expansion features recorded using fast photography in the presence and absence of 0.5?T axial magnetic field are simulated using particle-in-cell code. Our simulation results qualitatively predict the plasma behavior.

  10. K-corrections and filter transformations in the ultraviolet, optical, and near infrared

    E-Print Network [OSTI]

    Michael R. Blanton; Sam Roweis

    2006-06-07

    Template fits to observed galaxy fluxes allow calculation of K-corrections and conversions among observations of galaxies at various wavelengths. We present a method for creating model-based template sets given a set of heterogeneous photometric and spectroscopic galaxy data. Our technique, non-negative matrix factorization, is akin to principle component analysis (PCA), except that it is constrained to produce nonnegative templates, it can use a basis set of models (rather than the delta function basis of PCA), and it naturally handles uncertainties, missing data, and heterogeneous data (including broad-band fluxes at various redshifts). The particular implementation we present here is suitable for ultraviolet, optical, and near-infrared observations in the redshift range 0 base our templates on stellar population synthesis models, the results are intepretable in terms of approximate stellar masses and star-formation histories. We present templates fit with this method to data from GALEX, Sloan Digital Sky Survey spectroscopy and photometry, the Two-Micron All Sky Survey, the Deep Extragalactic Evolutionary Probe and the Great Observatories Origins Deep Survey. In addition, we present software for using such data to estimate K-corrections and stellar masses.

  11. Ultraviolet emission lines of Si II in cool star and solar spectra

    E-Print Network [OSTI]

    Laha, Sibasish; ferland, Gary J; Ramsbottom, Catherine A; Aggarwal, Kanti M; Ayres, Thomas R; Chatzikos, Marios; van Hoof, Peter A M; Williams, Robin J R

    2015-01-01

    Recent atomic physics calculations for Si II are employed within the Cloudy modelling code to analyse Hubble Space Telescope (HST) STIS ultraviolet spectra of three cool stars, Beta-Geminorum, Alpha-Centauri A and B, as well as previously published HST/GHRS observations of Alpha-Tau, plus solar quiet Sun data from the High Resolution Telescope and Spectrograph. Discrepancies found previously between theory and observation for line intensity ratios involving the 3s$^{2}$3p $^{2}$P$_{J}$--3s3p$^{2}$ $^{4}$P$_{J^{\\prime}}$ intercombination multiplet of Si II at 2335 Angs are significantly reduced, as are those for ratios containing the 3s$^{2}$3p $^{2}$P$_{J}$--3s3p$^{2}$ $^{2}$D$_{J^{\\prime}}$ transitions at 1816 Angs. This is primarily due to the effect of the new Si II transition probabilities. However, these atomic data are not only very different from previous calculations, but also show large disagreements with measurements, specifically those of Calamai et. al. (1993) for the intercombination lines. New m...

  12. Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED)

    SciTech Connect (OSTI)

    Kurose, N., E-mail: kurose@fc.ritsumei.ac.jp; Aoyagi, Y. [The Research Organization of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577 (Japan)] [The Research Organization of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577 (Japan); Shibano, K.; Araki, T. [Department of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577 (Japan)] [Department of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577 (Japan)

    2014-02-15

    A vertical ultraviolet (UV) light-emitting diode (LED) that does not require substrate removal is developed. Spontaneous via holes are formed in n-AlN layer epitaxially grown on a high conductive n+Si substrate and the injected current flows directly from the p-electrode to high doped n{sup +} Si substrate through p-AlGaN, multi-quantum wells, n-AlGaN and spontaneous via holes in n-AlN. The spontaneous via holes were formed by controlling feeding-sequence of metal-organic gas sources and NH{sub 3} and growth temperature in MOCVD. The via holes make insulating n-AlN to be conductive. We measured the current-voltage, current-light intensity and emission characteristics of this device. It exhibited a built-in voltage of 3.8 V and emission was stated at 350 nm from quantum wells with successive emission centered at 400?nm. This UV LED can be produced, including formation of n and p electrodes, without any resist process.

  13. Influence of laser pulse duration on extreme ultraviolet and ion emission features from tin plasmas

    SciTech Connect (OSTI)

    Roy, A., E-mail: roy@fzu.cz, E-mail: aroy@barc.gov.in [HiLASE Project, Department of Diode-Pumped Lasers, Institute of Physics of the ASCR, Na Slovance 2, 18221 Prague (Czech Republic); School of Nuclear Engineering and Center for Materials Under Extreme Environment (CMUXE), Purdue University, West Lafayette, Indiana 47907 (United States); Harilal, S. S.; Polek, M. P.; Hassan, S. M.; Hassanein, A. [School of Nuclear Engineering and Center for Materials Under Extreme Environment (CMUXE), Purdue University, West Lafayette, Indiana 47907 (United States)] [School of Nuclear Engineering and Center for Materials Under Extreme Environment (CMUXE), Purdue University, West Lafayette, Indiana 47907 (United States); Endo, A. [HiLASE Project, Department of Diode-Pumped Lasers, Institute of Physics of the ASCR, Na Slovance 2, 18221 Prague (Czech Republic)] [HiLASE Project, Department of Diode-Pumped Lasers, Institute of Physics of the ASCR, Na Slovance 2, 18221 Prague (Czech Republic)

    2014-03-15

    We investigated the role of laser pulse duration and intensity on extreme ultraviolet (EUV) generation and ion emission from a laser produced Sn plasma. For producing plasmas, planar slabs of pure Sn were irradiated with 1064?nm Nd:YAG laser pulses with varying pulse duration (5–20?ns) and intensity. Experimental results performed at CMUXE indicate that the conversion efficiency (CE) of the EUV radiation strongly depend on laser pulse width and intensity, with a maximum CE of ?2.0% measured for the shortest laser pulse width used (5?ns). Faraday Cup ion analysis of Sn plasma showed that the ion flux kinetic profiles are shifted to higher energy side with the reduction in laser pulse duration and narrower ion kinetic profiles are obtained for the longest pulse width used. However, our initial results showed that at a constant laser energy, the ion flux is more or less constant regardless of the excitation laser pulse width. The enhanced EUV emission obtained at shortest laser pulse duration studied is related to efficient laser-plasma reheating supported by presence of higher energy ions at these pulse durations.

  14. Effective interface state effects in hydrogenated amorphous-crystalline silicon heterostructures using ultraviolet laser photocarrier radiometry

    SciTech Connect (OSTI)

    Melnikov, A.; Mandelis, A.; Halliop, B.; Kherani, N. P.

    2013-12-28

    Ultraviolet photocarrier radiometry (UV-PCR) was used for the characterization of thin-film (nanolayer) intrinsic hydrogenated amorphous silicon (i-a-Si:H) on c-Si. The small absorption depth (approximately 10?nm at 355?nm laser excitation) leads to strong influence of the nanolayer parameters on the propagation and recombination of the photocarrier density wave (CDW) within the layer and the substrate. A theoretical PCR model including the presence of effective interface carrier traps was developed and used to evaluate the transport parameters of the substrate c-Si as well as those of the i-a-Si:H nanolayer. Unlike conventional optoelectronic characterization methods such as photoconductance, photovoltage, and photoluminescence, UV-PCR can be applied to more complete quantitative characterization of a-Si:H/c-Si heterojunction solar cells, including transport properties and defect structures. The quantitative results elucidate the strong effect of a front-surface passivating nanolayer on the transport properties of the entire structure as the result of effective a-Si:H/c-Si interface trap neutralization through occupation. A further dramatic improvement of those properties with the addition of a back-surface passivating nanolayer is observed and interpreted as the result of the interaction of the increased excess bulk CDW with, and more complete occupation and neutralization of, effective front interface traps.

  15. NANOSTRUCTURED HIGH PERFORMANCE ULTRAVIOLET AND BLUE LIGHT EMITTING DIODES FOR SOLID STATE LIGHTING

    SciTech Connect (OSTI)

    Arto V. Nurmikko; Jung Han

    2004-10-01

    We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications. Accomplishments in the first 12 month contract period include (1) new means of synthesizing zero- and one-dimensional GaN nanostructures, (2) establishment of the building blocks for making GaN-based microcavity devices, and (3) demonstration of top-down approach to nano-scale photonic devices for enhanced spontaneous emission and light extraction. These include a demonstration of eight-fold enhancement of the external emission efficiency in new InGaN QW photonic crystal structures. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

  16. Nanostructured High Performance Ultraviolet and Blue Light Emitting Diodes for Solid State Lighting

    SciTech Connect (OSTI)

    Arto V. Nurmikko; Jung Han

    2005-09-30

    We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications. Accomplishments in the second 12 month contract period include (i) new means of synthesizing AlGaN and InN quantum dots by droplet heteroepitaxy, (ii) synthesis of AlGaInN nanowires as building blocks for GaN-based microcavity devices, (iii) progress towards direct epitaxial alignment of the dense arrays of nanowires, (iv) observation and measurements of stimulated emission in dense InGaN nanopost arrays, (v) design and fabrication of InGaN photonic crystal emitters, and (vi) observation and measurements of enhanced fluorescence from coupled quantum dot and plasmonic nanostructures. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

  17. Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

    SciTech Connect (OSTI)

    Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep

    2013-01-28

    We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.

  18. Vacuum-ultraviolet (VUV) photoionization of small methanol and methanol-water clusters

    SciTech Connect (OSTI)

    Ahmed, Musahid; Ahmed, Musahid; Wilson, Kevin R.; Belau, Leonid; Kostko, Oleg

    2008-05-12

    In this work we report on thevacuum-ultraviolet (VUV) photoionization of small methanol and methanol-water clusters. Clusters of methanol with water are generated via co-expansion of the gas phase constituents in a continuous supersonic jet expansion of methanol and water seeded in Ar. The resulting clusters are investigated by single photon ionization with tunable vacuumultraviolet synchrotron radiation and mass analyzed using reflectron mass spectrometry. Protonated methanol clusters of the form (CH3OH)nH + (n=1-12) dominate the mass spectrum below the ionization energy of the methanol monomer. With an increase in water concentration, small amounts of mixed clusters of the form (CH3OH)n(H2O)H + (n=2-11) are detected. The only unprotonated species observed in this work are the methanol monomer and dimer. Appearance energies are obtained from the photoionization efficiency (PIE) curves for CH3OH +, (CH 3OH)2 +, (CH3OH)nH + (n=1-9), and (CH 3OH)n(H2O)H + (n=2-9 ) as a function of photon energy. With an increase in the water content in the molecular beam, there is an enhancement of photoionization intensity for methanol dimer and protonated methanol monomer at threshold. These results are compared and contrasted to previous experimental observations.

  19. Comparison of surface vacuum ultraviolet emissions with resonance level number densities. I. Argon plasmas

    SciTech Connect (OSTI)

    Boffard, John B., E-mail: jboffard@wisc.edu; Lin, Chun C. [Department of Physics, University of Wisconsin, Madison, WI 53706 (United States); Culver, Cody [Materials Science Program, University of Wisconsin, Madison, WI 53706 (United States); Wang, Shicong; Wendt, Amy E. [Department of Electrical and Computer Engineering, University of Wisconsin, Madison, WI 53706 (United States); Radovanov, Svetlana; Persing, Harold [Varian Semiconductor Equipment, Applied Materials Inc., Gloucester, MA 01939 (United States)

    2014-03-15

    Vacuum ultraviolet (VUV) photons emitted from excited atomic states are ubiquitous in material processing plasmas. The highly energetic photons can induce surface damage by driving surface reactions, disordering surface regions, and affecting bonds in the bulk material. In argon plasmas, the VUV emissions are due to the decay of the 1s{sub 4} and 1s{sub 2} principal resonance levels with emission wavelengths of 104.8 and 106.7?nm, respectively. The authors have measured the number densities of atoms in the two resonance levels using both white light optical absorption spectroscopy and radiation-trapping induced changes in the 3p{sup 5}4p?3p{sup 5}4s branching fractions measured via visible/near-infrared optical emission spectroscopy in an argon inductively coupled plasma as a function of both pressure and power. An emission model that takes into account radiation trapping was used to calculate the VUV emission rate. The model results were compared to experimental measurements made with a National Institute of Standards and Technology-calibrated VUV photodiode. The photodiode and model results are in generally good accord and reveal a strong dependence on the neutral gas temperature.

  20. Exploring the Origin and Fate of the Magellanic Stream with Ultraviolet and Optical Absorption

    E-Print Network [OSTI]

    Fox, Andrew J; Smoker, Jonathan V; Richter, Philipp; Savage, Blair D; Sembach, Kenneth R

    2010-01-01

    (Abridged) We present an analysis of ionization and metal enrichment in the Magellanic Stream (MS), the nearest gaseous tidal stream, using HST/STIS and FUSE ultraviolet spectroscopy of two background AGN, NGC 7469 and Mrk 335. For NGC 7469, we include optical spectroscopy from VLT/UVES. In both sightlines the MS is detected in low-ion and high-ion absorption. Toward NGC 7469, we measure a MS oxygen abundance [O/H]_MS=[OI/HI]=-1.00+/-0.05(stat)+/-0.08(syst), supporting the view that the Stream originates in the SMC rather than the LMC. We use CLOUDY to model the low-ion phase of the Stream as a photoionized plasma using the observed Si III/Si II and C III/C II ratios. Toward Mrk 335 this yields an ionization parameter log U between -3.45 and -3.15 and a gas density log (n_H/cm^-3) between -2.51 and -2.21. Toward NGC 7469 we derive sub-solar abundance ratios for [Si/O], [Fe/O], and [Al/O], indicating the presence of dust in the MS. The high-ion column densities are too large to be explained by photoionization,...

  1. Detailed balance condition and ultraviolet stability of scalar field in Horava-Lifshitz gravity

    E-Print Network [OSTI]

    Ahmad Borzou; Kai Lin; Anzhong Wang

    2011-04-23

    Detailed balance and projectability conditions are two main assumptions when Horava recently formulated his theory of quantum gravity - the Horava-Lifshitz (HL) theory. While the latter represents an important ingredient, the former often believed needs to be abandoned, in order to obtain an ultraviolet stable scalar field, among other things. In this paper, because of several attractive features of this condition, we revisit it, and show that the scalar field can be stabilized, if the detailed balance condition is allowed to be softly broken. Although this is done explicitly in the non-relativistic general covariant setup of Horava-Melby-Thompson with an arbitrary coupling constant $\\lambda$, generalized lately by da Silva, it is also true in other versions of the HL theory. With the detailed balance condition softly breaking, the number of independent coupling constants can be still significantly reduced. It is remarkable to note that, unlike other setups, in this da Silva generalization, there exists a master equation for the linear perturbations of the scalar field in the flat Friedmann-Robertson-Walker background.

  2. Distinguishing Unfolding and Functional Conformational Transitions of Calmodulin Using Ultraviolet Resonance Raman Spectroscopy

    SciTech Connect (OSTI)

    Jones, Eric M.; Balakrishnan, G.; Squier, Thomas C.; Spiro, Thomas

    2014-06-14

    Calmodulin (CaM) is a ubiquitous moderator protein for calcium signaling in all eukaryotic cells. This small calcium-binding protein exhibits a broad range of structural transitions, including domain opening and folding-unfolding, that allow it to recognize a wide variety of binding partners in vivo. While the static structures of CaM associated with its various binding activities are fairly well known, it has been challenging to examine the dynamics of transition between these structures in real-time, due to a lack of suitable spectroscopic probes of CaM structure. In this paper, we examine the potential of ultraviolet resonance Raman (UVRR) spectroscopy for clarifying the nature of structural transitions in CaM. We find that the UVRR spectral change (with 229 nm excitation) due to thermal unfolding of CaM is qualitatively different from that associated with opening of the C-terminal domain in response to Ca2+ binding. This spectral difference is entirely due to differences in teritary contacts at the inter-domain tyrosine residue Tyr138, toward which other spectroscopic methods are not sensitive. We conclude that UVRR is ideally suited to identifying the different types of structural transitions in CaM and other proteins with conformation-sensitive tyrosine residues, opening a path to time-resolved studies of CaM dynamics using Raman spectroscopy.

  3. The Far Ultraviolet Spectral Signatures of Formaldehyde and Carbon Dioxide in Comets

    E-Print Network [OSTI]

    Feldman, Paul D; McCandliss, Stephan R; Weaver, Harold A

    2009-01-01

    Observations of four comets made with the Far Ultraviolet Spectroscopic Explorer show the rotational envelope of the (0,0) band of the CO Hopfield-Birge system (C - X) at 1088 A to consist of both "cold" and "hot" components, the "cold" component accounting for ~75% of the flux and with a rotational temperature in the range 55-75 K. We identify the "hot" component as coming from the dissociation of CO2 into rotationally "hot" CO, with electron impact dissociation probably dominant over photodissociation near the nucleus. An additional weak, broad satellite band is seen centered near the position of the P(40) line that we attribute to CO fluorescence from a non-thermal high J rotational population produced by photodissociation of formaldehyde into CO and H2. This process also leaves the H2 preferentially populated in excited vibrational levels which are identified by fluorescent H2 lines in the spectrum excited by solar OVI 1031.9 and solar Lyman-alpha. The amount of H2 produced by H2CO dissociation is compara...

  4. The WFPC2 ultraviolet survey: The blue straggler population in NGC 5824

    SciTech Connect (OSTI)

    Sanna, N.; Dalessandro, E.; Ferraro, F. R.; Lanzoni, B.; Miocchi, P.

    2014-01-01

    We have used a combination of high-resolution Hubble Space Telescope Wide Field Planetary Camera 2 and wide-field ground-based observations, in ultraviolet and optical bands, to study the blue straggler star population of the massive outer halo globular cluster NGC 5824 over its entire radial extent. We have computed the center of the cluster and constructed the radial density profile from detailed star counts. The profile is well reproduced by a Wilson model with a small core (r{sub c} ? 4.''4) and a concentration parameter c ? 2.74. We also present the first age determination for this cluster. From a comparison with isochrones, we find t = 13 ± 0.5 Gyr. We discuss this result in the context of the observed age-metallicity relation of Galactic globular clusters. A total of 60 bright blue stragglers has been identified. Their radial distribution is found to be bimodal, with a central peak, a well-defined minimum at r ? 20'', and an upturn at large radii. In the framework of the dynamical clock recently defined by Ferraro et al., this feature suggests that NGC 5824 is a cluster of intermediate dynamical age.

  5. On the role of chemical reactions in initiating ultraviolet laser ablation in poly(methyl methacrylate)

    SciTech Connect (OSTI)

    Prasad, Manish; Conforti, Patrick F.; Garrison, Barbara J.

    2007-05-15

    The role of chemical reactions is investigated versus the thermal and mechanical processes occurring in a polymer substrate during irradiation by a laser pulse and subsequent ablation. Molecular dynamics simulations with an embedded Monte Carlo based reaction scheme were used to study ultraviolet ablation of poly(methyl methacrylate) at 157 nm. We discuss the onset of ablation, the mechanisms leading to ablation, and the role of stress relaxation of the polymer matrix during ablation. Laser induced heating and chemical decomposition of the polymer substrate are considered as ablation pathways. It is shown that heating the substrate can set off ablation via mechanical failure of the material only for very short laser pulses. For longer pulses, the mechanism of ejection is thermally driven limited by the critical number of bonds broken in the substrate. Alternatively, if the photon energy goes towards direct bond breaking, it initiates chemical reactions, polymer unzipping, and formation of gaseous products, leading to a nearly complete decomposition of the top layers of substrates. The ejection of small molecules has a hollowing out effect on the weakly connected substrates which can lead to lift-off of larger chunks. Excessive pressure buildup upon the creation of gaseous molecules does not lead to enhanced yield. The larger clusters are thermally ejected, and an entrainment of larger polymer fragments in gaseous molecules is not observed.

  6. THE EXTREME ULTRAVIOLET DEFICIT AND MAGNETICALLY ARRESTED ACCRETION IN RADIO-LOUD QUASARS

    SciTech Connect (OSTI)

    Punsly, Brian

    2014-12-20

    The Hubble Space Telescope composite quasar spectra presented in Telfer et al. show a significant deficit of emission in the extreme ultraviolet for the radio-loud component of the quasar population (RLQs) compared to the radio-quiet component of the quasar population. The composite quasar continuum emission between 1100 Å and ?580 Å is generally considered to be associated with the innermost regions of the accretion flow onto the central black hole. The deficit between 1100 Å and 580 Å in RLQs has a straightforward interpretation as a missing or a suppressed innermost region of local energy dissipation in the accretion flow. It is proposed that this can be the result of islands of large-scale magnetic flux in RLQs that are located close to the central black hole that remove energy from the accretion flow as Poynting flux (sometimes called magnetically arrested accretion). These magnetic islands are natural sites for launching relativistic jets. Based on the Telfer et al. data and the numerical simulations of accretion flows in Penna et al., the magnetic islands are concentrated between the event horizon and an outer boundary of <2.8 M (in geometrized units) for rapidly rotating black holes and <5.5 M for modestly rotating black holes.

  7. Narrowband filter radiometer for ground-based measurements of global ultraviolet solar irradiance and total ozone

    SciTech Connect (OSTI)

    Petkov, Boyan; Vitale, Vito; Tomasi, Claudio; Bonafe, Ubaldo; Scaglione, Salvatore; Flori, Daniele; Santaguida, Riccardo; Gausa, Michael; Hansen, Georg; Colombo, Tiziano

    2006-06-20

    The ultraviolet narrowband filter radiometer (UV-RAD) designed by the authors to take ground-based measurements of UV solar irradiance, total ozone, and biological dose rate is described, together with the main characteristics of the seven blocked filters mounted on it, all of which have full widths at half maxima that range 0.67 to 0.98 nm. We have analyzed the causes of cosine response and calibration errors carefully to define the corresponding correction terms, paying particular attention to those that are due to the spectral displacements of the filter transmittance peaks from the integer wavelength values. The influence of the ozone profile on the retrieved ozone at large solar zenith angles has also been examined by means of field measurements. The opportunity of carrying out nearly monochromatic irradiance measurements offered by the UV-RAD allowed us to improve the procedure usually followed to reconstruct the solar spectrum at the surface by fitting the computed results, using radiative transfer models with field measurements of irradiance. Two long-term comparison campaigns took place, showing that a mean discrepancy of+0.3% exists between the UV-RAD total ozone values and those given by the Brewer no. 63 spectroradiometer and that mean differences of+0.3% and-0.9% exist between the erythemal dose rates determined with the UV-RAD and those obtained with the Brewer no. 63 and the Brewer no. 104 spectroradiometers, respectively.

  8. Norathyriol Suppresses Skin Cancers Induced by Solar Ultraviolet Radiation by Targeting ERK Kinases

    SciTech Connect (OSTI)

    Li, Jixia; Malakhova, Margarita; Mottamal, Madhusoodanan; Reddy, Kanamata; Kurinov, Igor; Carper, Andria; Langfald, Alyssa; Oi, Naomi; Kim, Myoung Ok; Zhu, Feng; Sosa, Carlos P.; Zhou, Keyuan; Bode, Ann M.; Dong, Zigang

    2012-06-27

    Ultraviolet (UV) irradiation is the leading factor in the development of skin cancer, prompting great interest in chemopreventive agents for this disease. In this study, we report the discovery of norathyriol, a plant-derived chemopreventive compound identified through an in silico virtual screening of the Chinese Medicine Library. Norathyriol is a metabolite of mangiferin found in mango, Hypericum elegans, and Tripterospermum lanceolatum and is known to have anticancer activity. Mechanistic investigations determined that norathyriol acted as an inhibitor of extracellular signal-regulated kinase (ERK)1/2 activity to attenuate UVB-induced phosphorylation in mitogen-activated protein kinases signaling cascades. We confirmed the direct and specific binding of norathyriol with ERK2 through a cocrystal structural analysis. The xanthone moiety in norathyriol acted as an adenine mimetic to anchor the compound by hydrogen bonds to the hinge region of the protein ATP-binding site on ERK2. Norathyriol inhibited in vitro cell growth in mouse skin epidermal JB6 P+ cells at the level of G{sub 2}-M phase arrest. In mouse skin tumorigenesis assays, norathyriol significantly suppressed solar UV-induced skin carcinogenesis. Further analysis indicated that norathyriol mediates its chemopreventive activity by inhibiting the ERK-dependent activity of transcriptional factors AP-1 and NF-{kappa}B during UV-induced skin carcinogenesis. Taken together, our results identify norathyriol as a safe new chemopreventive agent that is highly effective against development of UV-induced skin cancer.

  9. Fabrication and Characterization of Nano-Sized Magnetic Structures and Their Flux-Pinning Effects on Superconducting Thin Films 

    E-Print Network [OSTI]

    Lee, Han Gil

    2011-02-22

    . . ............................................................................................. 29 22 Cobalt was grown not only on the Au film cathode, but also on the contact pads for this sample.. ........................................................ 31 23 A photo mask (1 cm by 1cm... for electron beam lithography of the cathode, cohesion frames, and electrical lead to the cathode. ................................................. 34 25 The pattern for electron beam lithography for the superconducting...

  10. Structure of a Glomulin-RBX1-CUL1 Complex: Inhibition of a RING E3 Ligase through Masking of Its E2-Binding Surface

    SciTech Connect (OSTI)

    Duda, David M.; Olszewski, Jennifer L.; Tron, Adriana E.; Hammel, Michal; Lambert, Lester J.; Waddell, M. Brett; Mittag, Tanja; DeCaprio, James A.; Schulman, Brenda A. (BWH); (LBNL); (SJCH); (DFCI)

    2012-11-01

    The approximately 300 human cullin-RING ligases (CRLs) are multisubunit E3s in which a RING protein, either RBX1 or RBX2, recruits an E2 to catalyze ubiquitination. RBX1-containing CRLs also can bind Glomulin (GLMN), which binds RBX1's RING domain, regulates the RBX1-CUL1-containing SCF{sup FBW7} complex, and is disrupted in the disease Glomuvenous Malformation. Here we report the crystal structure of a complex between GLMN, RBX1, and a fragment of CUL1. Structural and biochemical analyses reveal that GLMN adopts a HEAT-like repeat fold that tightly binds the E2-interacting surface of RBX1, inhibiting CRL-mediated chain formation by the E2 CDC34. The structure explains the basis for GLMN's selectivity toward RBX1 over RBX2, and how disease-associated mutations disrupt GLMN-RBX1 interactions. Our study reveals a mechanism for RING E3 ligase regulation, whereby an inhibitor blocks E2 access, and raises the possibility that other E3s are likewise controlled by cellular proteins that mask E2-binding surfaces to mediate inhibition.

  11. The formation of IRIS diagnostics. III. Near-ultraviolet spectra and images

    SciTech Connect (OSTI)

    Pereira, T. M. D.; Leenaarts, J.; De Pontieu, B.; Carlsson, M.; Uitenbroek, H. E-mail: jorritl@astro.uio.no E-mail: mats.carlsson@astro.uio.no

    2013-12-01

    The Mg II h and k lines are the prime chromospheric diagnostics of NASA's Interface Region Imaging Spectrograph (IRIS). In the previous papers of this series, we used a realistic three-dimensional radiative magnetohydrodynamics model to calculate the h and k lines in detail and investigated how their spectral features relate to the underlying atmosphere. In this work, we employ the same approach to investigate how the h and k diagnostics fare when taking into account the finite resolution of IRIS and different noise levels. In addition, we investigate the diagnostic potential of several other photospheric lines and near-continuum regions present in the near-ultraviolet (NUV) window of IRIS and study the formation of the NUV slit-jaw images. We find that the instrumental resolution of IRIS has a small effect on the quality of the h and k diagnostics; the relations between the spectral features and atmospheric properties are mostly unchanged. The peak separation is the most affected diagnostic, but mainly due to limitations of the simulation. The effects of noise start to be noticeable at a signal-to-noise ratio (S/N) of 20, but we show that with noise filtering one can obtain reliable diagnostics at least down to a S/N of 5. The many photospheric lines present in the NUV window provide velocity information for at least eight distinct photospheric heights. Using line-free regions in the h and k far wings, we derive good estimates of photospheric temperature for at least three heights. Both of these diagnostics, in particular the latter, can be obtained even at S/Ns as low as 5.

  12. ACTIVE REGION MOSS: DOPPLER SHIFTS FROM HINODE/EXTREME-ULTRAVIOLET IMAGING SPECTROMETER OBSERVATIONS

    SciTech Connect (OSTI)

    Tripathi, Durgesh [Inter-University Centre for Astronomy and Astrophysics, Pune University Campus, Pune 411007 (India); Mason, Helen E. [Department of Applied Mathematics and Theoretical Physics, University of Cambridge, Wilberforce Road, Cambridge CB3 0WA (United Kingdom); Klimchuk, James A. [NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States)

    2012-07-01

    Studying the Doppler shifts and the temperature dependence of Doppler shifts in moss regions can help us understand the heating processes in the core of the active regions. In this paper, we have used an active region observation recorded by the Extreme-ultraviolet Imaging Spectrometer (EIS) on board Hinode on 2007 December 12 to measure the Doppler shifts in the moss regions. We have distinguished the moss regions from the rest of the active region by defining a low-density cutoff as derived by Tripathi et al. in 2010. We have carried out a very careful analysis of the EIS wavelength calibration based on the method described by Young et al. in 2012. For spectral lines having maximum sensitivity between log T = 5.85 and log T = 6.25 K, we find that the velocity distribution peaks at around 0 km s{sup -1} with an estimated error of 4-5 km s{sup -1}. The width of the distribution decreases with temperature. The mean of the distribution shows a blueshift which increases with increasing temperature and the distribution also shows asymmetries toward blueshift. Comparing these results with observables predicted from different coronal heating models, we find that these results are consistent with both steady and impulsive heating scenarios. However, the fact that there are a significant number of pixels showing velocity amplitudes that exceed the uncertainty of 5 km s{sup -1} is suggestive of impulsive heating. Clearly, further observational constraints are needed to distinguish between these two heating scenarios.

  13. Ultraviolet Broad Absorption Features and the Spectral Energy Distribution of the QSO PG 1351+64

    E-Print Network [OSTI]

    W. Zheng; G. A. Kriss; J. X. Wang; M. Brotherton; W. R. Oegerle; W. P. Blair; A. F. Davidsen; R. F. Green; J. B. Hutchings; M. E. Kaiser

    2001-07-30

    We present a moderate-resolution (~20 km/s) spectrum of the mini broad-absorption-line QSO PG1351+64 between 915-1180 A, obtained with the Far Ultraviolet Spectroscopic Explorer (FUSE). Additional spectra at longer wavelengths were also obtained with the HST and ground-based telescopes. Broad absorption is present on the blue wings of CIII 977, Ly-beta, OVI 1032,1038, Ly-alpha, NV 1238,1242, SiIV 1393,1402, and CIV 1548,1450. The absorption profile can be fitted with five components at velocities of ~ -780, -1049, -1629, -1833, and -3054 km/s with respect to the emission-line redshift of z = 0.088. All the absorption components cover a large fraction of the continuum source as well as the broad-line region. The OVI emission feature is very weak, and the OVI/Lyalpha flux ratio is 0.08, one of the lowest among low-redshift active galaxies and QSOs. The UV continuum shows a significant change in slope near 1050 A in the restframe. The steeper continuum shortward of the Lyman limit extrapolates well to the observed weak X-ray flux level. The absorbers' properties are similar to those of high-redshift broad absorption-line QSOs. The derived total column density of the UV absorbers is on the order of 10^21 cm^-2, unlikely to produce significant opacity above 1 keV in the X-ray. Unless there is a separate, high-ionization X-ray absorber, the QSO's weak X-ray flux may be intrinsic. The ionization level of the absorbing components is comparable to that anticipated in the broad-line region, therefore the absorbers may be related to broad-line clouds along the line of sight.

  14. The Young and the Dustless: Interpreting Radio Observations of UltraViolet Luminous Galaxies

    E-Print Network [OSTI]

    Antara R. Basu-Zych; David Schiminovich; Benjamin D. Johnson; Charles Hoopes; Roderik Overzier; Marie A. Treyer; Timothy M. Heckman; Tom A. Barlow; Luciana Bianchi; Tim Conrow; Jose Donas; Karl G. Forster; Peter G. Friedman; Young-Wook Lee; Barry F. Madore; D. Christopher Martin; Bruno Milliard; Patrick Morrissey; Susan G. Neff; R. Michael Rich; Samir Salim; Mark Seibert; Todd A. Small; Alex S. Szalay; Ted K. Wyder; Suk Young Yi

    2007-07-12

    Ultraviolet Luminous Galaxies (UVLGs) have been identified as intensely star-forming, nearby galaxies. A subset of these, the supercompact UVLGs, are believed to be local analogs of high redshift Lyman Break Galaxies. Here we investigate the radio continuum properties of this important population for the first time. We have observed 42 supercompact UVLGs with the VLA, all of which have extensive coverage in the UV/optical by GALEX and SDSS. Our analysis includes comparison samples of multiwavelength data from the Spitzer First Look Survey and from the SDSS-Galex matched catalogs. In addition we have Spitzer MIPS data for 24 of our galaxies and find that they fall on the radio-FIR correlation of normal star-forming galaxies. We find that our galaxies have lower radio-to-UV ratios and lower Balmer decrements than other local galaxies with similar (high) star formation rates. Optical spectra show they have lower Dn(4000) and HdeltaA indices, higher Hbeta emission-line equivalents widths, and higher [OIII]5007/Hbeta emission-line ratios than normal star forming galaxies. Comparing these results to galaxy spectral evolution models we conclude that supercompact UVLGs are distinguished from normal star forming galaxies firstly by their high specific star formation rates. Moreover, compared to other types of galaxies with similar star formation rates, they have significantly less dust attenuation. In both regards they are similar to Lyman Break Galaxies. This suggests that the process that causes star formation in the supercompact UVLGs differs from other local star forming galaxies, but may be similar to Lyman Break Galaxies.

  15. Non-LTE model atmosphere analysis of the early ultraviolet spectra of nova OS Andromedae 1986

    E-Print Network [OSTI]

    Greg Schwarz; Peter H. Hauschildt; Sumner Starrfield; Eddie Baron; France Allard; Steve Shore; George Sonneborn

    1996-08-29

    We have analyzed the early optically thick ultraviolet spectra of Nova OS And 1986 using a grid of spherically symmetric, non-LTE, line-blanketed, expanding model atmospheres and synthetic spectra with the following set of parameters: $5,000\\le$ T$_{model}$ $\\le 60,000$K, solar abundances, $\\rho \\propto r^{-3}$, $\\v_{max} = 2000\\kms$, $L=6 \\times 10^{4}\\Lsun$, and a statistical or microturbulent velocity of 50 $\\kms$. We used the synthetic spectra to estimate the model parameters corresponding to the observed {\\it IUE} spectra. The fits to the observations were then iteratively improved by changing the parameters of the model atmospheres, in particular T$_{model}$ and the abundances, to arrive at the best fits to the optically thick pseudo-continuum and the features found in the {\\it IUE} spectra. The {\\it IUE} spectra show two different optically thick subphases. The earliest spectra, taken a few days after maximum optical light, show a pseudo-continuum created by overlapping absorption lines. The later observations, taken approximately 3 weeks after maximum light, show the simultaneous presence of allowed, semi-forbidden, and forbidden lines in the observed spectra. Analysis of these phases indicate that OS And 86 had solar metallicities except for Mg which showed evidence of being underabundant by as much as a factor of 10. We determine a distance of 5.1 kpc to OS And 86 and derive a peak bolometric luminosity of $\\sim$ 5 $\\times$ 10$^4$ L$_{\\odot}$. The computed nova parameters provide insights into the physics of the early outburst and explain the spectra seen by {\\it IUE}. Lastly, we find evidence in the later observations for large non-LTE effects of Fe{\\sc ii} which, when included, lead to much better agreement with the observations.

  16. ACTUAL-WASTE TESTING OF ULTRAVIOLET LIGHT TO AUGMENT THE ENHANCED CHEMICAL CLEANING OF SRS SLUDGE

    SciTech Connect (OSTI)

    Martino, C.; King, W.; Ketusky, E.

    2012-07-10

    In support of Savannah River Site (SRS) tank closure efforts, the Savannah River National Laboratory (SRNL) conducted Real Waste Testing (RWT) to evaluate Enhanced Chemical Cleaning (ECC), an alternative to the baseline 8 wt% oxalic acid (OA) chemical cleaning technology for tank sludge heel removal. ECC utilizes a more dilute OA solution (2 wt%) and an oxalate destruction technology using ozonolysis with or without the application of ultraviolet (UV) light. SRNL conducted tests of the ECC process using actual SRS waste material from Tanks 5F and 12H. The previous phase of testing involved testing of all phases of the ECC process (sludge dissolution, OA decomposition, product evaporation, and deposition tank storage) but did not involve the use of UV light in OA decomposition. The new phase of testing documented in this report focused on the use of UV light to assist OA decomposition, but involved only the OA decomposition and deposition tank portions of the process. Compared with the previous testing at analogous conditions without UV light, OA decomposition with the use of UV light generally reduced time required to reach the target of <100 mg/L oxalate. This effect was the most pronounced during the initial part of the decomposition batches, when pH was <4. For the later stages of each OA decomposition batch, the increase in OA decomposition rate with use of the UV light appeared to be minimal. Testing of the deposition tank storage of the ECC product resulted in analogous soluble concentrations regardless of the use or non-use of UV light in the ECC reactor.

  17. Ultraviolet observations of Super-Chandrasekhar mass type Ia supernova candidates with swift UVOT

    SciTech Connect (OSTI)

    Brown, Peter J.; Smitka, Michael T.; Krisciunas, Kevin; Wang, Lifan [George P. and Cynthia Woods Mitchell Institute for Fundamental Physics and Astronomy, Texas A and M University, Department of Physics and Astronomy, 4242 TAMU, College Station, TX 77843 (United States); Kuin, Paul; De Pasquale, Massimiliano [Mullard Space Science Laboratory, University College London, Holmbury St. Mary, Dorking Surrey, RH5 6NT (United Kingdom); Scalzo, Richard [Research School of Astronomy and Astrophysics, The Australian National University, Mount Stromlo Observatory, Cotter Road, Weston Creek, ACT 2611 (Australia); Holland, Stephen [Space Telescope Science Center 3700 San Martin Drive, Baltimore, MD 21218 (United States); Milne, Peter, E-mail: pbrown@physics.tamu.edu [Steward Observatory, University of Arizona, Tucson, AZ 85719 (United States)

    2014-05-20

    Among Type Ia supernovae (SNe Ia), a class of overluminous objects exist whose ejecta mass is inferred to be larger than the canonical Chandrasekhar mass. We present and discuss the UV/optical photometric light curves, colors, absolute magnitudes, and spectra of three candidate Super-Chandrasekhar mass SNe—2009dc, 2011aa, and 2012dn—observed with the Swift Ultraviolet/Optical Telescope. The light curves are at the broad end for SNe Ia, with the light curves of SN 2011aa being among the broadest ever observed. We find all three to have very blue colors which may provide a means of excluding these overluminous SNe from cosmological analysis, though there is some overlap with the bluest of 'normal' SNe Ia. All three are overluminous in their UV absolute magnitudes compared to normal and broad SNe Ia, but SNe 2011aa and 2012dn are not optically overluminous compared to normal SNe Ia. The integrated luminosity curves of SNe 2011aa and 2012dn in the UVOT range (1600-6000 Å) are only half as bright as SN 2009dc, implying a smaller {sup 56}Ni yield. While it is not enough to strongly affect the bolometric flux, the early time mid-UV flux makes a significant contribution at early times. The strong spectral features in the mid-UV spectra of SNe 2009dc and 2012dn suggest a higher temperature and lower opacity to be the cause of the UV excess rather than a hot, smooth blackbody from shock interaction. Further work is needed to determine the ejecta and {sup 56}Ni masses of SNe 2011aa and 2012dn and to fully explain their high UV luminosities.

  18. Infrared lessons for ultraviolet gravity: the case of massive gravity and Born-Infeld

    SciTech Connect (OSTI)

    Jiménez, Jose Beltrán; Heisenberg, Lavinia; Olmo, Gonzalo J. E-mail: Lavinia.Heisenberg@unige.ch

    2014-11-01

    We generalize the ultraviolet sector of gravitation via a Born-Infeld action using lessons from massive gravity. The theory contains all of the elementary symmetric polynomials and is treated in the Palatini formalism. We show how the connection can be solved algebraically to be the Levi-Civita connection of an effective metric. The non-linearity of the algebraic equations yields several branches, one of which always reduces to General Relativity at low curvatures. We explore in detail a minimal version of the theory, for which we study solutions in the presence of a perfect fluid with special attention to the cosmological evolution. In vacuum we recover Ricci-flat solutions, but also an additional physical solution corresponding to an Einstein space. The existence of two physical branches remains for non-vacuum solutions and, in addition, the branch that connects to the Einstein space in vacuum is not very sensitive to the specific value of the energy density. For the branch that connects to the General Relativity limit we generically find three behaviours for the Hubble function depending on the equation of state of the fluid, namely: either there is a maximum value for the energy density that connects continuously with vacuum, or the energy density can be arbitrarily large but the Hubble function saturates and remains constant at high energy densities, or the energy density is unbounded and the Hubble function grows faster than in General Relativity. The second case is particularly interesting because it could offer an interesting inflationary epoch even in the presence of a dust component. Finally, we discuss the possibility of avoiding certain types of singularities within the minimal model.

  19. Overlying extreme-ultraviolet arcades preventing eruption of a filament observed by AIA/SDO

    SciTech Connect (OSTI)

    Chen, Huadong; Ma, Suli; Zhang, Jun

    2013-11-20

    Using the multi-wavelength data from the Atmospheric Imaging Assembly/Solar Dynamic Observatory (AIA/SDO) and the Sun Earth Connection Coronal and Heliospheric Investigation/Solar Terrestrial Relations Observatory (SECCHI/STEREO), we report a failed filament eruption in NOAA AR 11339 on 2011 November 3. The eruption was associated with an X1.9 flare, but without any coronal mass ejection (CME), coronal dimming, or extreme ultraviolet (EUV) waves. Some magnetic arcades above the filament were observed distinctly in EUV channels, especially in the AIA 94 Å and 131 Å wavebands, before and during the filament eruption process. Our results show that the overlying arcades expanded along with the ascent of the filament at first until they reached a projected height of about 49 Mm above the Sun's surface, where they stopped. The following filament material was observed to be confined by the stopped EUV arcades and not to escape from the Sun. After the flare, a new filament formed at the low corona where part of the former filament remained before its eruption. These results support that the overlying arcades play an important role in preventing the filament from successfully erupting outward. We also discuss in this paper the EUV emission of the overlying arcades during the flare. It is rare for a failed filament eruption to be associated with an X1.9 class flare, but not with a CME or EUV waves. Therefore, this study also provides valuable insight into the triggering mechanism of the initiation of CMEs and EUV waves.

  20. Investigating the effective range of vacuum ultraviolet-mediated breakdown in high-power microwave metamaterials

    SciTech Connect (OSTI)

    Liu, Chien-Hao, E-mail: cliu82@wisc.edu; Neher, Joel D., E-mail: jdneher@wisc.edu; Booske, John H., E-mail: booske@engr.wisc.edu; Behdad, Nader, E-mail: behdad@wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706 (United States)

    2014-10-14

    Metamaterials and periodic structures operating under high-power excitations are susceptible to breakdown. It was recently demonstrated that a localized breakdown created in a given region of a periodic structure can facilitate breakdown in other regions of the structure where the intensity of the incident electromagnetic fields may not be high enough to cause breakdown under normal circumstances. It was also demonstrated that this phenomenon is due to the generation of vacuum ultraviolet radiation at the location of the initial discharge, which propagates to the neighboring regions (e.g., other unit cells in a periodic structure) and facilitates the generation of a discharge at a lower incident power level. In this paper, we present the results of an experimental study conducted to determine the effective range of this physical phenomenon for periodic structures that operate in air and in pure nitrogen gas at atmospheric pressure levels. It is demonstrated that when breakdown is induced in a periodic structure using a high-power pulse with a frequency of 9.382 GHz, duration of 0.8 ?s, and peak power level of 25 kW, this phenomenon is highly likely to happen in radii of approximately 16–17 mm from the location of the initial discharge under these test conditions. The results of this study are significant in designing metamaterials and periodic structures for high-power microwave applications as they suggest that a localized discharge created in such a periodic structure with a periodicity less than 16–17 mm can spread over a large surface and result in a distributed discharge.