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Sample records for ultraviolet lithography mask

  1. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Investigating Extreme Ultraviolet Lithography Mask Defects Print Wednesday, 28 July 2010 00:00 Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using

  2. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  3. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  4. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  5. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  6. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  7. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigating Extreme Ultraviolet Lithography Mask Defects Print Since the 1970s, the semiconductor industry has strived to shrink the cost and size of circuit patterns printed onto computer chips in accordance with Moore's law, doubling the number of transistors on a computer's central processing unit (CPU) every two years. The introduction of extreme ultraviolet (EUV) lithography, printing chips using 13-nm-wavelength light, opens the way to future generations of smaller, faster, and cheaper

  8. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    blemishes. In lithography, the complex process used to create computer chips, a six-inch glass plate called a mask carries one layer of a circuit pattern-the image of which is...

  9. Extreme ultraviolet lithography machine

    DOE Patents [OSTI]

    Tichenor, Daniel A. (Castro Valley, CA); Kubiak, Glenn D. (Livermore, CA); Haney, Steven J. (Tracy, CA); Sweeney, Donald W. (San Ramon, CA)

    2000-01-01

    An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

  10. Method for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Felter, T. E. (727 Clara St., Livermore, Alameda County, CA 94550); Kubiak, G. D. (475 Maple St., Livermore, Alameda County, CA 94550)

    2000-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  11. Method for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Felter, T. E. (Livermore, CA); Kubiak, Glenn D. (Livermore, CA)

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  12. Defect tolerant transmission lithography mask

    DOE Patents [OSTI]

    Vernon, Stephen P. (Pleasanton, CA)

    2000-01-01

    A transmission lithography mask that utilizes a transparent substrate or a partially transparent membrane as the active region of the mask. A reflective single layer or multilayer coating is deposited on the membrane surface facing the illumination system. The coating is selectively patterned (removed) to form transmissive (bright) regions. Structural imperfections and defects in the coating have negligible effect on the aerial image of the mask master pattern since the coating is used to reflect radiation out of the entrance pupil of the imaging system. Similarly, structural imperfections in the clear regions of the membrane have little influence on the amplitude or phase of the transmitted electromagnetic fields. Since the mask "discards," rather than absorbs, unwanted radiation, it has reduced optical absorption and reduced thermal loading as compared to conventional designs. For EUV applications, the mask circumvents the phase defect problem, and is independent of the thermal load during exposure.

  13. Photoresist composition for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Felter, T. E. (Alameda County, CA); Kubiak, G. D. (Alameda County, CA)

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

  14. High numerical aperture projection system for extreme ultraviolet projection lithography

    DOE Patents [OSTI]

    Hudyma, Russell M. (San Ramon, CA)

    2000-01-01

    An optical system is described that is compatible with extreme ultraviolet radiation and comprises five reflective elements for projecting a mask image onto a substrate. The five optical elements are characterized in order from object to image as concave, convex, concave, convex, and concave mirrors. The optical system is particularly suited for ring field, step and scan lithography methods. The invention uses aspheric mirrors to minimize static distortion and balance the static distortion across the ring field width which effectively minimizes dynamic distortion. The present invention allows for higher device density because the optical system has improved resolution that results from the high numerical aperture, which is at least 0.14.

  15. Etched-multilayer phase shifting masks for EUV lithography

    DOE Patents [OSTI]

    Chapman, Henry N.; Taylor, John S.

    2005-04-05

    A method is disclosed for the implementation of phase shifting masks for EUV lithography. The method involves directly etching material away from the multilayer coating of the mask, to cause a refractive phase shift in the mask. By etching into the multilayer (for example, by reactive ion etching), rather than depositing extra material on the top of the multilayer, there will be minimal absorption loss associated with the phase shift.

  16. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    semiconductor industry consortium, to create a unique Fresnel zone-plate microscope on Advanced Light Source Beamline 11.3.2 called the SEMATECH Berkeley Actinic...

  17. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Tool The AIT is the world's highest-performing EUV microscope dedicated to photomask research. It operates on bend-magnet Beamline 11.3.2 at the Advanced Light Source, Lawrence...

  18. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Light Source, Lawrence Berkeley National Laboratory. It is also the first zone-plate microscope to feature an array of selectable lenses with different optical properties,...

  19. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1 nm high and can be very difficult or impossible to detect with non-EUV techniques. The SEM inspection underestimates the size of this defect, which appears as a dark line...

  20. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the size of this defect, which appears as a dark line surrounded by a transparent halo. Actinic inspection with the AIT shows that the halo is completely opaque to EUV. This...

  1. Condenser for ring-field deep ultraviolet and extreme ultraviolet lithography

    DOE Patents [OSTI]

    Chapman, Henry N. (Livermore, CA); Nugent, Keith A. (North Fitzroy, AU)

    2002-01-01

    A condenser for use with a ring-field deep ultraviolet or extreme ultraviolet lithography system. A condenser includes a ripple-plate mirror which is illuminated by a collimated or converging beam at grazing incidence. The ripple plate comprises a flat or curved plate mirror into which is formed a series of channels along an axis of the mirror to produce a series of concave surfaces in an undulating pattern. Light incident along the channels of the mirror is reflected onto a series of cones. The distribution of slopes on the ripple plate leads to a distribution of angles of reflection of the incident beam. This distribution has the form of an arc, with the extremes of the arc given by the greatest slope in the ripple plate. An imaging mirror focuses this distribution to a ring-field arc at the mask plane.

  2. Condenser for ring-field deep-ultraviolet and extreme-ultraviolet lithography

    DOE Patents [OSTI]

    Chapman, Henry N. (Livermore, CA); Nugent, Keith A. (North Fitzroy, AU)

    2001-01-01

    A condenser for use with a ring-field deep ultraviolet or extreme ultraviolet lithography system. A condenser includes a ripple-plate mirror which is illuminated by a collimated beam at grazing incidence. The ripple plate comprises a plate mirror into which is formed a series of channels along an axis of the mirror to produce a series of concave surfaces in an undulating pattern. Light incident along the channels of the mirror is reflected onto a series of cones. The distribution of slopes on the ripple plate leads to a distribution of angles of reflection of the incident beam. This distribution has the form of an arc, with the extremes of the arc given by the greatest slope in the ripple plate. An imaging mirror focuses this distribution to a ring-field arc at the mask plane.

  3. Vitreous carbon mask substrate for X-ray lithography

    DOE Patents [OSTI]

    Aigeldinger, Georg; Skala, Dawn M.; Griffiths, Stewart K.; Talin, Albert Alec; Losey, Matthew W.; Yang, Chu-Yeu Peter

    2009-10-27

    The present invention is directed to the use of vitreous carbon as a substrate material for providing masks for X-ray lithography. The new substrate also enables a small thickness of the mask absorber used to pattern the resist, and this enables improved mask accuracy. An alternative embodiment comprised the use of vitreous carbon as a LIGA substrate wherein the VC wafer blank is etched in a reactive ion plasma after which an X-ray resist is bonded. This surface treatment provides a surface enabling good adhesion of the X-ray photoresist and subsequent nucleation and adhesion of the electrodeposited metal for LIGA mold-making while the VC substrate practically eliminates secondary radiation effects that lead to delamination of the X-ray resist form the substrate, the loss of isolated resist features, and the formation of a resist layer adjacent to the substrate that is insoluble in the developer.

  4. Compact multi-bounce projection system for extreme ultraviolet projection lithography

    DOE Patents [OSTI]

    Hudyma, Russell M. (San Ramon, CA)

    2002-01-01

    An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four optical elements providing five reflective surfaces for projecting a mask image onto a substrate. The five optical surfaces are characterized in order from object to image as concave, convex, concave, convex and concave mirrors. The second and fourth reflective surfaces are part of the same optical element. The optical system is particularly suited for ring field step and scan lithography methods. The invention uses aspheric mirrors to minimize static distortion and balance the static distortion across the ring field width, which effectively minimizes dynamic distortion.

  5. Self-cleaning optic for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Klebanoff, Leonard E.; Stulen, Richard H.

    2003-12-16

    A multilayer reflective optic or mirror for lithographic applications, and particularly extreme ultraviolet (EUV) lithography, having a surface or "capping" layer which in combination with incident radiation and gaseous molecular species such as O.sub.2, H.sub.2, H.sub.2 O provides for continuous cleaning of carbon deposits from the optic surface. The metal capping layer is required to be oxidation resistant and capable of transmitting at least 90% of incident EUV radiation. Materials for the capping layer include Ru, Rh, Pd, Ir, Pt and Au and combinations thereof.

  6. Method for the protection of extreme ultraviolet lithography optics

    DOE Patents [OSTI]

    Grunow, Philip A.; Clift, Wayne M.; Klebanoff, Leonard E.

    2010-06-22

    A coating for the protection of optical surfaces exposed to a high energy erosive plasma. A gas that can be decomposed by the high energy plasma, such as the xenon plasma used for extreme ultraviolet lithography (EUVL), is injected into the EUVL machine. The decomposition products coat the optical surfaces with a protective coating maintained at less than about 100 .ANG. thick by periodic injections of the gas. Gases that can be used include hydrocarbon gases, particularly methane, PH.sub.3 and H.sub.2S. The use of PH.sub.3 and H.sub.2S is particularly advantageous since films of the plasma-induced decomposition products S and P cannot grow to greater than 10 .ANG. thick in a vacuum atmosphere such as found in an EUVL machine.

  7. Four-mirror extreme ultraviolet (EUV) lithography projection system

    DOE Patents [OSTI]

    Cohen, Simon J (Pleasonton, CA); Jeong, Hwan J (Los Altos, CA); Shafer, David R (Fairfield, CT)

    2000-01-01

    The invention is directed to a four-mirror catoptric projection system for extreme ultraviolet (EUV) lithography to transfer a pattern from a reflective reticle to a wafer substrate. In order along the light path followed by light from the reticle to the wafer substrate, the system includes a dominantly hyperbolic convex mirror, a dominantly elliptical concave mirror, spherical convex mirror, and spherical concave mirror. The reticle and wafer substrate are positioned along the system's optical axis on opposite sides of the mirrors. The hyperbolic and elliptical mirrors are positioned on the same side of the system's optical axis as the reticle, and are relatively large in diameter as they are positioned on the high magnification side of the system. The hyperbolic and elliptical mirrors are relatively far off the optical axis and hence they have significant aspherical components in their curvatures. The convex spherical mirror is positioned on the optical axis, and has a substantially or perfectly spherical shape. The spherical concave mirror is positioned substantially on the opposite side of the optical axis from the hyperbolic and elliptical mirrors. Because it is positioned off-axis to a degree, the spherical concave mirror has some asphericity to counter aberrations. The spherical concave mirror forms a relatively large, uniform field on the wafer substrate. The mirrors can be tilted or decentered slightly to achieve further increase in the field size.

  8. Low-cost method for producing extreme ultraviolet lithography optics

    DOE Patents [OSTI]

    Folta, James A. (Livermore, CA); Montcalm, Claude (Fort Collins, CO); Taylor, John S. (Livermore, CA); Spiller, Eberhard A. (Mt. Kisco, NY)

    2003-11-21

    Spherical and non-spherical optical elements produced by standard optical figuring and polishing techniques are extremely expensive. Such surfaces can be cheaply produced by diamond turning; however, the roughness in the diamond turned surface prevent their use for EUV lithography. These ripples are smoothed with a coating of polyimide before applying a 60 period Mo/Si multilayer to reflect a wavelength of 134 .ANG. and have obtained peak reflectivities close to 63%. The savings in cost are about a factor of 100.

  9. Properites of ultrathin films appropriate for optics capping layers in extreme ultraviolet lithography (EUVL)

    SciTech Connect (OSTI)

    Bajt, S; Edwards, N V; Madey, T E

    2007-06-25

    The contamination of optical surfaces by irradiation shortens optics lifetime and is one of the main concerns for optics used in conjunction with intense light sources, such as high power lasers, 3rd and 4th generation synchrotron sources or plasma sources used in extreme ultraviolet lithography (EUVL) tools. This paper focuses on properties and surface chemistry of different materials, which as thin layers, could be used as capping layers to protect and extend EUVL optics lifetime. The most promising candidates include single element materials such as ruthenium and rhodium, and oxides such as TiO{sub 2} and ZrO{sub 2}.

  10. Repair of localized defects in multilayer-coated reticle blanks for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Stearns, Daniel G.; Sweeney, Donald W.; Mirkarimi, Paul B.

    2004-11-23

    A method is provided for repairing defects in a multilayer coating layered onto a reticle blank used in an extreme ultraviolet lithography (EUVL) system. Using high lateral spatial resolution, energy is deposited in the multilayer coating in the vicinity of the defect. This can be accomplished using a focused electron beam, focused ion beam or a focused electromagnetic radiation. The absorbed energy will cause a structural modification of the film, producing a localized change in the film thickness. The change in film thickness can be controlled with sub-nanometer accuracy by adjusting the energy dose. The lateral spatial resolution of the thickness modification is controlled by the localization of the energy deposition. The film thickness is adjusted locally to correct the perturbation of the reflected field. For example, when the structural modification is a localized film contraction, the repair of a defect consists of flattening a mound or spreading out the sides of a depression.

  11. Method for the manufacture of phase shifting masks for EUV lithography

    DOE Patents [OSTI]

    Stearns, Daniel G.; Sweeney, Donald W.; Mirkarimi, Paul B.; Barty, Anton

    2006-04-04

    A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.

  12. Printability and inspectability of programmed pit defects on teh masks in EUV lithography

    SciTech Connect (OSTI)

    Kang, I.-Y.; Seo, H.-S.; Ahn, B.-S.; Lee, D.-G.; Kim, D.; Huh, S.; Koh, C.-W.; Cha, B.; Kim, S.-S.; Cho, H.-K.; Mochi, I.; Goldberg, K. A.

    2010-03-12

    Printability and inspectability of phase defects in ELlVL mask originated from substrate pit were investigated. For this purpose, PDMs with programmed pits on substrate were fabricated using different ML sources from several suppliers. Simulations with 32-nm HP L/S show that substrate pits with below {approx}20 nm in depth would not be printed on the wafer if they could be smoothed by ML process down to {approx}1 nm in depth on ML surface. Through the investigation of inspectability for programmed pits, minimum pit sizes detected by KLA6xx, AIT, and M7360 depend on ML smoothing performance. Furthermore, printability results for pit defects also correlate with smoothed pit sizes. AIT results for pattemed mask with 32-nm HP L/S represents that minimum printable size of pits could be {approx}28.3 nm of SEVD. In addition, printability of pits became more printable as defocus moves to (-) directions. Consequently, printability of phase defects strongly depends on their locations with respect to those of absorber patterns. This indicates that defect compensation by pattern shift could be a key technique to realize zero printable phase defects in EUVL masks.

  13. Maskless, reticle-free, lithography

    DOE Patents [OSTI]

    Ceglio, Natale M. (Livermore, CA); Markle, David A. (Saratoga, CA)

    1997-11-25

    A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies.

  14. Maskless, reticle-free, lithography

    DOE Patents [OSTI]

    Ceglio, N.M.; Markle, D.A.

    1997-11-25

    A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies. 7 figs.

  15. Method for generating extreme ultraviolet with mather-type plasma accelerators for use in Extreme Ultraviolet Lithography

    DOE Patents [OSTI]

    Hassanein, Ahmed (Bolingbrook, IL); Konkashbaev, Isak (Bolingbrook, IL)

    2006-10-03

    A device and method for generating extremely short-wave ultraviolet electromagnetic wave uses two intersecting plasma beams generated by two plasma accelerators. The intersection of the two plasma beams emits electromagnetic radiation and in particular radiation in the extreme ultraviolet wavelength. In the preferred orientation two axially aligned counter streaming plasmas collide to produce an intense source of electromagnetic radiation at the 13.5 nm wavelength. The Mather type plasma accelerators can utilize tin, or lithium covered electrodes. Tin, lithium or xenon can be used as the photon emitting gas source.

  16. VUV lithography

    DOE Patents [OSTI]

    George, E.V.; Oster, Y.; Mundinger, D.C.

    1990-12-25

    Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1,700--1,300A using xenon, krypton or argon; shorter wavelengths of 850--650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask. 6 figs.

  17. VUV lithography

    DOE Patents [OSTI]

    George, Edward V.; Oster, Yale; Mundinger, David C.

    1990-01-01

    Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1700-1300A using xenon, krypton or argon; shorter wavelengths of 850-650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask.

  18. Method for plasma formation for extreme ultraviolet lithography-theta pinch

    DOE Patents [OSTI]

    Hassanein, Ahmed (Naperville, IL); Konkashbaev, Isak (Bolingbrook, IL); Rice, Bryan (Hillsboro, OR)

    2007-02-20

    A device and method for generating extremely short-wave ultraviolet electromagnetic wave, utilizing a theta pinch plasma generator to produce electromagnetic radiation in the range of 10 to 20 nm. The device comprises an axially aligned open-ended pinch chamber defining a plasma zone adapted to contain a plasma generating gas within the plasma zone; a means for generating a magnetic field radially outward of the open-ended pinch chamber to produce a discharge plasma from the plasma generating gas, thereby producing a electromagnetic wave in the extreme ultraviolet range; a collecting means in optical communication with the pinch chamber to collect the electromagnetic radiation; and focusing means in optical communication with the collecting means to concentrate the electromagnetic radiation.

  19. Passivating overcoat bilayer for multilayer reflective coatings for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Montcalm, Claude (Livermore, CA); Stearns, Daniel G. (Los Altos, CA); Vernon, Stephen P. (Pleasanton, CA)

    1999-01-01

    A passivating overcoat bilayer is used for multilayer reflective coatings for extreme ultraviolet (EUV) or soft x-ray applications to prevent oxidation and corrosion of the multilayer coating, thereby improving the EUV optical performance. The overcoat bilayer comprises a layer of silicon or beryllium underneath at least one top layer of an elemental or a compound material that resists oxidation and corrosion. Materials for the top layer include carbon, palladium, carbides, borides, nitrides, and oxides. The thicknesses of the two layers that make up the overcoat bilayer are optimized to produce the highest reflectance at the wavelength range of operation. Protective overcoat systems comprising three or more layers are also possible.

  20. High numerical aperture ring field projection system for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Hudyma, Russell (218 Eastridge Dr., San Ramon, CA 94583-4905); Shafer, David R. (56 Drake La., Fairfield, CT 06430-2925)

    2001-01-01

    An all-reflective optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first convex mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receive a chief ray at an incidence angle of less than substantially 9.degree., and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 14.degree.. Four of the six reflecting surfaces have an aspheric departure of less than substantially 12 .mu.m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 12 .mu.m. Each of the six reflecting surfaces has an aspheric departure of less than substantially 16 .mu.m.

  1. High numerical aperture ring field projection system for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Hudyma, Russell (315 Eastridge Dr., San Ramon, CA 94583-4905)

    2001-01-01

    An all-reflective optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first concave mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receives a chief ray at an incidence angle of less than substantially 12.degree., and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 15.degree.. Four of the six reflecting surfaces have an aspheric departure of less than substantially 7 .mu.m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 14 .mu.m. Each of the six reflecting surfaces has an aspheric departure of less than 16.0 .mu.m.

  2. High numerical aperture ring field projection system for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Hudyma, Russell (218 Eastridge Dr., San Ramon, CA 84583-4905)

    2000-01-01

    An all-refelctive optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first concave mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receives a chief ray at an incidence angle less than substantially 12.degree., and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 15.degree.. Four of the six reflecting surfaces have an aspheric departure of less than substantially 7 .mu.m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 14 .mu.m. Each of the six refelecting surfaces has an aspheric departure of less than 16.0 .mu.m.

  3. Method and apparatus for inspecting reflection masks for defects

    DOE Patents [OSTI]

    Bokor, Jeffrey; Lin, Yun

    2003-04-29

    An at-wavelength system for extreme ultraviolet lithography mask blank defect detection is provided. When a focused beam of wavelength 13 nm is incident on a defective region of a mask blank, three possible phenomena can occur. The defect will induce an intensity reduction in the specularly reflected beam, scatter incoming photons into an off-specular direction, and change the amplitude and phase of the electric field at the surface which can be monitored through the change in the photoemission current. The magnitude of these changes will depend on the incident beam size, and the nature, extent and size of the defect. Inspection of the mask blank is performed by scanning the mask blank with 13 nm light focused to a spot a few .mu.m in diameter, while measuring the reflected beam intensity (bright field detection), the scattered beam intensity (dark-field detection) and/or the change in the photoemission current.

  4. Phase measurements of EUV mask defects

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claus, Rene A.; Wang, Yow-Gwo; Wojdyla, Antoine; Benk, Markus P.; Goldberg, Kenneth A.; Neureuther, Andrew R.; Naulleau, Patrick P.; Waller, Laura

    2015-02-22

    Extreme Ultraviolet (EUV) Lithography mask defects were examined on the actinic mask imaging system, SHARP, at Lawrence Berkeley National Laboratory. Also, a quantitative phase retrieval algorithm based on the Weak Object Transfer Function was applied to the measured through-focus aerial images to examine the amplitude and phase of the defects. The accuracy of the algorithm was demonstrated by comparing the results of measurements using a phase contrast zone plate and a standard zone plate. Using partially coherent illumination to measure frequencies that would otherwise fall outside the numerical aperture (NA), it was shown that some defects are smaller than themore » conventional resolution of the microscope. We found that the programmed defects of various sizes were measured and shown to have both an amplitude and a phase component that the algorithm is able to recover.« less

  5. Maskless, resistless ion beam lithography

    SciTech Connect (OSTI)

    Ji, Qing

    2003-03-10

    As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O{sub 2}{sup +}, BF{sub 2}{sup +}, P{sup +} etc., for surface modification and doping applications. With optimized source condition, around 85% of BF{sub 2}{sup +}, over 90% of O{sub 2}{sup +} and P{sup +} have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He{sup +} beam is as high as 440 A/cm{sup 2} {center_dot} Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O{sub 2}{sup +} ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O{sub 2}{sup +} ions with the dose of 10{sup 15} cm{sup -2}. The oxide can then serve as a hard mask for patterning of the Si film. The process flow and the experimental results for directly patterned poly-Si features are presented. The formation of shallow pn-junctions in bulk silicon wafers by scanning focused P{sup +} beam implantation at 5 keV is also presented. With implantation dose of around 10{sup 16} cm{sup -2}, the electron concentration is about 2.5 x 10{sup 18} cm{sup -3} and electron mobility is around 200 cm{sup 2}/V{center_dot}s. To demonstrate the suitability of scanning FIB lithography for the manufacture of integrated circuit devices, SOI MOSFET fabrication using the maskless, resistless ion beam lithography is demonstrated. An array of microcolumns can be built by stacking multi-aperture electrode and insulator layers. Because the multicusp plasma source can achieve uniform ion density over a large area, it can be used in conjunction with the array of microcolumns, for massively parallel FIB processing to achieve reasonable exposure throughput.

  6. Nanoimprint-lithography Patterned Epitaxial Fe Nanowire Arrays...

    Office of Scientific and Technical Information (OSTI)

    epitaxial Fe nanowire arrays on MgO(001) substrates by nanoimprint lithography with a direct metallization of epitaxial materials through a metallic mask, which avoided the...

  7. Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer

    DOE Patents [OSTI]

    Cardinale, Gregory F. (Oakland, CA)

    2002-01-01

    A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.

  8. Dynamic mask for producing uniform or graded-thickness thin films

    DOE Patents [OSTI]

    Folta, James A. (Livermore, CA)

    2006-06-13

    A method for producing single layer or multilayer films with high thickness uniformity or thickness gradients. The method utilizes a moving mask which blocks some of the flux from a sputter target or evaporation source before it deposits on a substrate. The velocity and position of the mask is computer controlled to precisely tailor the film thickness distribution. The method is applicable to any type of vapor deposition system, but is particularly useful for ion beam sputter deposition and evaporation deposition; and enables a high degree of uniformity for ion beam deposition, even for near-normal incidence of deposition species, which may be critical for producing low-defect multilayer coatings, such as required for masks for extreme ultraviolet lithography (EUVL). The mask can have a variety of shapes, from a simple solid paddle shape to a larger mask with a shaped hole through which the flux passes. The motion of the mask can be linear or rotational, and the mask can be moved to make single or multiple passes in front of the substrate per layer, and can pass completely or partially across the substrate.

  9. Critical illumination condenser for x-ray lithography

    DOE Patents [OSTI]

    Cohen, S.J.; Seppala, L.G.

    1998-04-07

    A critical illumination condenser system is disclosed, particularly adapted for use in extreme ultraviolet (EUV) projection lithography based on a ring field imaging system and a laser produced plasma source. The system uses three spherical mirrors and is capable of illuminating the extent of the mask plane by scanning either the primary mirror or the laser plasma source. The angles of radiation incident upon each mirror of the critical illumination condenser vary by less than eight (8) degrees. For example, the imaging system in which the critical illumination condenser is utilized has a 200 {micro}m source and requires a magnification of 26. The three spherical mirror system constitutes a two mirror inverse Cassegrain, or Schwarzschild configuration, with a 25% area obstruction (50% linear obstruction). The third mirror provides the final pupil and image relay. The mirrors include a multilayer reflective coating which is reflective over a narrow bandwidth. 6 figs.

  10. Critical illumination condenser for x-ray lithography

    DOE Patents [OSTI]

    Cohen, Simon J. (Pleasanton, CA); Seppala, Lynn G. (Livermore, CA)

    1998-01-01

    A critical illumination condenser system, particularly adapted for use in extreme ultraviolet (EUV) projection lithography based on a ring field imaging system and a laser produced plasma source. The system uses three spherical mirrors and is capable of illuminating the extent of the mask plane by scanning either the primary mirror or the laser plasma source. The angles of radiation incident upon each mirror of the critical illumination condenser vary by less than eight (8) degrees. For example, the imaging system in which the critical illumination condenser is utilized has a 200 .mu.m source and requires a magnification of 26.times.. The three spherical mirror system constitutes a two mirror inverse Cassegrain, or Schwarzschild configuration, with a 25% area obstruction (50% linear obstruction). The third mirror provides the final pupil and image relay. The mirrors include a multilayer reflective coating which is reflective over a narrow bandwidth.

  11. Plasma formed ion beam projection lithography system

    DOE Patents [OSTI]

    Leung, Ka-Ngo (Hercules, CA); Lee, Yung-Hee Yvette (Berkeley, CA); Ngo, Vinh (San Jose, CA); Zahir, Nastaran (Greenbrae, CA)

    2002-01-01

    A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.

  12. Virtual mask digital electron beam lithography

    DOE Patents [OSTI]

    Baylor, L.R.; Thomas, C.E.; Voelkl, E.; Moore, J.A.; Simpson, M.L.; Paulus, M.J.

    1999-04-06

    Systems and methods for direct-to-digital holography are described. An apparatus includes a laser; a beamsplitter optically coupled to the laser; a reference beam mirror optically coupled to the beamsplitter; an object optically coupled to the beamsplitter, a focusing lens optically coupled to both the reference beam mirror and the object; and a digital recorder optically coupled to the focusing lens. A reference beam is incident upon the reference beam mirror at a non-normal angle, and the reference beam and an object beam are focused by the focusing lens at a focal plane of the digital recorder to form an image. The systems and methods provide advantages in that computer assisted holographic measurements can be made. 5 figs.

  13. Virtual mask digital electron beam lithography

    DOE Patents [OSTI]

    Baylor, Larry R. (Farragut, TN); Thomas, Clarence E. (Knoxville, TN); Voelkl, Edgar (Oak Ridge, TN); Moore, James A. (Powell, TN); Simpson, Michael L. (Knoxville, TN); Paulus, Michael J. (Knoxville, TN)

    1999-01-01

    Systems and methods for direct-to-digital holography are described. An apparatus includes a laser; a beamsplitter optically coupled to the laser; a reference beam mirror optically coupled to the beamsplitter; an object optically coupled to the beamsplitter, a focusing lens optically coupled to both the reference beam mirror and the object; and a digital recorder optically coupled to the focusing lens. A reference beam is incident upon the reference beam mirror at a non-normal angle, and the reference beam and an object beam are focused by the focusing lens at a focal plane of the digital recorder to form an image. The systems and methods provide advantages in that computer assisted holographic measurements can be made.

  14. Mask fabrication process

    DOE Patents [OSTI]

    Cardinale, Gregory F. (Oakland, CA)

    2000-01-01

    A method for fabricating masks and reticles useful for projection lithography systems. An absorber layer is conventionally patterned using a pattern and etch process. Following the step of patterning, the entire surface of the remaining top patterning photoresist layer as well as that portion of an underlying protective photoresist layer where absorber material has been etched away is exposed to UV radiation. The UV-exposed regions of the protective photoresist layer and the top patterning photoresist layer are then removed by solution development, thereby eliminating the need for an oxygen plasma etch and strip and chances for damaging the surface of the substrate or coatings.

  15. Inspection of lithographic mask blanks for defects

    DOE Patents [OSTI]

    Sommargren, Gary E. (Santa Cruz, CA)

    2001-01-01

    A visible light method for detecting sub-100 nm size defects on mask blanks used for lithography. By using optical heterodyne techniques, detection of the scattered light can be significantly enhanced as compared to standard intensity detection methods. The invention is useful in the inspection of super-polished surfaces for isolated surface defects or particulate contamination and in the inspection of lithographic mask or reticle blanks for surface defects or bulk defects or for surface particulate contamination.

  16. Maskless lithography

    DOE Patents [OSTI]

    Sweatt, W.C.; Stulen, R.H.

    1999-02-09

    The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides. 12 figs.

  17. Maskless lithography

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Stulen, Richard H. (Livermore, CA)

    1999-01-01

    The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.

  18. Method for the fabrication of three-dimensional microstructures by deep X-ray lithography

    DOE Patents [OSTI]

    Sweatt, William C.; Christenson, Todd R.

    2005-04-05

    A method for the fabrication of three-dimensional microstructures by deep X-ray lithography (DXRL) comprises a masking process that uses a patterned mask with inclined mask holes and off-normal exposures with a DXRL beam aligned with the inclined mask holes. Microstructural features that are oriented in different directions can be obtained by using multiple off-normal exposures through additional mask holes having different orientations. Various methods can be used to block the non-aligned mask holes from the beam when using multiple exposures. A method for fabricating a precision 3D X-ray mask comprises forming an intermediate mask and a master mask on a common support membrane.

  19. Diffractive element in extreme-UV lithography condenser

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Ray-Chaudhurl, Avijit K. (Livermore, CA)

    2000-01-01

    Condensers having a mirror with a diffraction grating in projection lithography using extreme ultra-violet significantly enhances critical dimension control. The diffraction grating has the effect of smoothing the illumination at the camera's entrance pupil with minimum light loss. Modeling suggests that critical dimension control for 100 nm features can be improved from 3 nm to less than about 0.5 nm.

  20. Diffractive element in extreme-UV lithography condenser

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Ray-Chaudhuri, Avijit (Livermore, CA)

    2001-01-01

    Condensers having a mirror with a diffraction grating in projection lithography using extreme ultra-violet significantly enhances critical dimension control. The diffraction grating has the effect of smoothing the illumination at the camera's entrance pupil with minimum light loss. Modeling suggests that critical dimension control for 100 nm features can be improved from 3 nm to less than about 0.5 nm.

  1. Nanopatterning of ultrananocrystalline diamond thin films via block copolymer lithography.

    SciTech Connect (OSTI)

    Ramanathan, M.; Darling, S. B.; Sumant, A. V.; Auciello, O.

    2010-07-01

    Nanopatterning of diamond surfaces is critical for the development of diamond-based microelectromechanical system/nanoelectromechanical system (MEMS/NEMS), such as resonators or switches. Micro-/nanopatterning of diamond materials is typically done using photolithography or electron beam lithography combined with reactive ion etching (RIE). In this work, we demonstrate a simple process, block copolymer (BCP) lithography, for nanopatterning of ultrananocrystalline diamond (UNCD) films to produce nanostructures suitable for the fabrication of NEMS based on UNCD. In BCP lithography, nanoscale self-assembled polymeric domains serve as an etch mask for pattern transfer. The authors used thin films of a cylinder-forming organic-inorganic BCP, poly(styrene-block-ferrocenyldimethylsilane), PS-b-PFS, as an etch mask on the surface of UNCD films. Orientational control of the etch masking cylindrical PFS blocks is achieved by manipulating the polymer film thickness in concert with the annealing treatment. We have observed that the surface roughness of UNCD layers plays an important role in transferring the pattern. Oxygen RIE was used to etch the exposed areas of the UNCD film underneath the BCP. Arrays of both UNCD posts and wirelike structures have been created using the same starting polymeric materials as the etch mask.

  2. Interferometric Lithography Patterned Pyrolytic Carbon. (Conference...

    Office of Scientific and Technical Information (OSTI)

    Interferometric Lithography Patterned Pyrolytic Carbon. Citation Details In-Document Search Title: Interferometric Lithography Patterned Pyrolytic Carbon. Abstract not provided....

  3. Maskless micro-ion-beam reduction lithography system

    DOE Patents [OSTI]

    Leung, Ka-Ngo; Barletta, William A.; Patterson, David O.; Gough, Richard A.

    2005-05-03

    A maskless micro-ion-beam reduction lithography system is a system for projecting patterns onto a resist layer on a wafer with feature size down to below 100 nm. The MMRL system operates without a stencil mask. The patterns are generated by switching beamlets on and off from a two electrode blanking system or pattern generator. The pattern generator controllably extracts the beamlet pattern from an ion source and is followed by a beam reduction and acceleration column.

  4. Ion beam lithography system

    DOE Patents [OSTI]

    Leung, Ka-Ngo

    2005-08-02

    A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.

  5. M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features

    DOE Patents [OSTI]

    Brueck, Steven R.J.; Chen, Xiaolan; Zaidi, Saleem; Devine, Daniel J.

    1998-06-02

    Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.

  6. Carbon contamination topography analysis of EUV masks

    SciTech Connect (OSTI)

    Fan, Y.-J.; Yankulin, L.; Thomas, P.; Mbanaso, C.; Antohe, A.; Garg, R.; Wang, Y.; Murray, T.; Wuest, A.; Goodwin, F.; Huh, S.; Cordes, A.; Naulleau, P.; Goldberg, K. A.; Mochi, I.; Gullikson, E.; Denbeaux, G.

    2010-03-12

    The impact of carbon contamination on extreme ultraviolet (EUV) masks is significant due to throughput loss and potential effects on imaging performance. Current carbon contamination research primarily focuses on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on absorbing features and the printed images, as well as impacting the efficiency of cleaning process. In this work, several different techniques were used to determine possible contamination topography. Lithographic simulations were also performed and the results compared with the experimental data.

  7. Membrane projection lithography

    DOE Patents [OSTI]

    Burckel, David Bruce; Davids, Paul S; Resnick, Paul J; Draper, Bruce L

    2015-03-17

    The various technologies presented herein relate to a three dimensional manufacturing technique for application with semiconductor technologies. A membrane layer can be formed over a cavity. An opening can be formed in the membrane such that the membrane can act as a mask layer to the underlying wall surfaces and bottom surface of the cavity. A beam to facilitate an operation comprising any of implantation, etching or deposition can be directed through the opening onto the underlying surface, with the opening acting as a mask to control the area of the underlying surfaces on which any of implantation occurs, material is removed, and/or material is deposited. The membrane can be removed, a new membrane placed over the cavity and a new opening formed to facilitate another implantation, etching, or deposition operation. By changing the direction of the beam different wall/bottom surfaces can be utilized to form a plurality of structures.

  8. Decal transfer lithography

    DOE Patents [OSTI]

    Nuzzo, Ralph G. (Champaign, IL); Childs, William R. (Champaign, IL); Motala, Michael J. (Champaign, IL); Lee, Keon Jae (Savoy, IL)

    2010-02-16

    A method of making a microstructure includes selectively activating a portion of a surface of a silicon-containing elastomer, contacting the activated portion with a substance, and bonding the activated portion and the substance, such that the activated portion of the surface and the substance in contact with the activated portion are irreversibly attached. The selective activation may be accomplished by positioning a mask on the surface of the silicon-containing elastomer, and irradiating the exposed portion with UV radiation.

  9. Method for maskless lithography

    DOE Patents [OSTI]

    Sweatt, William C. (13027 Arrovo de Vista, Albuquerque, NM 87111); Stulen, Richard H. (5258 Roxanne Ct., Livermore, Alameda County, CA 94550)

    2000-01-01

    The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.

  10. Programmable imprint lithography template

    DOE Patents [OSTI]

    Cardinale, Gregory F. (Oakland, CA); Talin, Albert A. (Livermore, CA)

    2006-10-31

    A template for imprint lithography (IL) that reduces significantly template production costs by allowing the same template to be re-used for several technology generations. The template is composed of an array of spaced-apart moveable and individually addressable rods or plungers. Thus, the template can be configured to provide a desired pattern by programming the array of plungers such that certain of the plungers are in an "up" or actuated configuration. This arrangement of "up" and "down" plungers forms a pattern composed of protruding and recessed features which can then be impressed onto a polymer film coated substrate by applying a pressure to the template impressing the programmed configuration into the polymer film. The pattern impressed into the polymer film will be reproduced on the substrate by subsequent processing.

  11. Soft x-ray reduction camera for submicron lithography

    DOE Patents [OSTI]

    Hawryluk, A.M.; Seppala, L.G.

    1991-03-26

    Soft x-ray projection lithography can be performed using x-ray optical components and spherical imaging lenses (mirrors), which form an x-ray reduction camera. The x-ray reduction is capable of projecting a 5x demagnified image of a mask onto a resist coated wafer using 4.5 nm radiation. The diffraction limited resolution of this design is about 135 nm with a depth of field of about 2.8 microns and a field of view of 0.2 cm[sup 2]. X-ray reflecting masks (patterned x-ray multilayer mirrors) which are fabricated on thick substrates and can be made relatively distortion free are used, with a laser produced plasma for the source. Higher resolution and/or larger areas are possible by varying the optic figures of the components and source characteristics. 9 figures.

  12. Soft x-ray reduction camera for submicron lithography

    DOE Patents [OSTI]

    Hawryluk, Andrew M. (2708 Rembrandt Pl., Modesto, CA 95356); Seppala, Lynn G. (7911 Mines Rd., Livermore, CA 94550)

    1991-01-01

    Soft x-ray projection lithography can be performed using x-ray optical components and spherical imaging lenses (mirrors), which form an x-ray reduction camera. The x-ray reduction is capable of projecting a 5x demagnified image of a mask onto a resist coated wafer using 4.5 nm radiation. The diffraction limited resolution of this design is about 135 nm with a depth of field of about 2.8 microns and a field of view of 0.2 cm.sup.2. X-ray reflecting masks (patterned x-ray multilayer mirrors) which are fabricated on thick substrates and can be made relatively distortion free are used, with a laser produced plasma for the source. Higher resolution and/or larger areas are possible by varying the optic figures of the components and source characteristics.

  13. Wavelength-specific reflections: A decade of EUV actinic mask inspection research

    SciTech Connect (OSTI)

    Goldberg, Kenneth; Mochi, Iacopo

    2010-12-31

    Mask inspection is essential for the success of any pattern-transfer lithography technology, and EUV Lithography in particular faces unique challenges. EUV masks resonant-reflective multilayer coatings have a narrow, wavelength-specific response that dramatically affects the way that defects appear, or disappear, at various illuminating wavelengths. Furthermore, the ever-shrinking size of 'critical' defects limits the potential effectiveness of DUV inspection techniques over time. Researchers pursuing numerous ways of finding and characterizing defects on EUV masks and have met with varying degrees of success. Their lessons inform the current, urgent exploration to select the most effective techniques for high-volume manufacturing. Ranging from basic research and demonstration experiments to commercial inspection tool prototypes, we survey the recent history of work in this area, including sixteen projects in Europe, Asia, and America. Solutions range from scanning beams to microscopy, dark field imaging to pattern transfer.

  14. X-ray lithography source

    DOE Patents [OSTI]

    Piestrup, M.A.; Boyers, D.G.; Pincus, C.

    1991-12-31

    A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits is disclosed. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and eliminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an excellent moderate-priced X-ray source for lithography. 26 figures.

  15. X-ray lithography source

    DOE Patents [OSTI]

    Piestrup, Melvin A. (Woodside, CA); Boyers, David G. (Mountain View, CA); Pincus, Cary (Sunnyvale, CA)

    1991-01-01

    A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and elminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an exellent moderate-priced X-ray source for lithography.

  16. Masked multichannel analyzer

    DOE Patents [OSTI]

    Winiecki, A.L.; Kroop, D.C.; McGee, M.K.; Lenkszus, F.R.

    1984-01-01

    An analytical instrument and particularly a time-of-flight-mass spectrometer for processing a large number of analog signals irregularly spaced over a spectrum, with programmable masking of portions of the spectrum where signals are unlikely in order to reduce memory requirements and/or with a signal capturing assembly having a plurality of signal capturing devices fewer in number than the analog signals for use in repeated cycles within the data processing time period.

  17. Masked multichannel analyzer

    DOE Patents [OSTI]

    Winiecki, Alan L. (Downers Grove, IL); Kroop, David C. (Columbia, MD); McGee, Marilyn K. (Colorado Springs, CO); Lenkszus, Frank R. (Woodridge, IL)

    1986-01-01

    An analytical instrument and particularly a time-of-flight-mass spectrometer for processing a large number of analog signals irregularly spaced over a spectrum, with programmable masking of portions of the spectrum where signals are unlikely in order to reduce memory requirements and/or with a signal capturing assembly having a plurality of signal capturing devices fewer in number than the analog signals for use in repeated cycles within the data processing time period.

  18. Wafer chamber having a gas curtain for extreme-UV lithography

    DOE Patents [OSTI]

    Kanouff, Michael P. (Livermore, CA); Ray-Chaudhuri, Avijit K. (Livermore, CA)

    2001-01-01

    An EUVL device includes a wafer chamber that is separated from the upstream optics by a barrier having an aperture that is permeable to the inert gas. Maintaining an inert gas curtain in the proximity of a wafer positioned in a chamber of an extreme ultraviolet lithography device can effectively prevent contaminants from reaching the optics in an extreme ultraviolet photolithography device even though solid window filters are not employed between the source of reflected radiation, e.g., the camera, and the wafer. The inert gas removes the contaminants by entrainment.

  19. Paving the Way to Nanoelectronics 16 nm and Smaller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Science Highlight Investigating Extreme Ultraviolet Lithography Mask Defects), and the development of ultrahigh-resolution photoresist-a light-sensitive material used to form a...

  20. Extreme-UV lithography system

    DOE Patents [OSTI]

    Replogle, William C. (Livermore, CA); Sweatt, William C. (Albuquerque, NM)

    2001-01-01

    A photolithography system that employs a condenser that includes a series of aspheric mirrors on one side of a small, incoherent source of radiation producing a series of beams is provided. Each aspheric mirror images the quasi point source into a curved line segment. A relatively small arc of the ring image is needed by the camera; all of the beams are so manipulated that they all fall onto this same arc needed by the camera. Also, all of the beams are aimed through the camera's virtual entrance pupil. The condenser includes a correcting mirror for reshaping a beam segment which improves the overall system efficiency. The condenser efficiently fills the larger radius ringfield created by today's advanced camera designs. The system further includes (i) means for adjusting the intensity profile at the camera's entrance pupil or (ii) means for partially shielding the illumination imaging onto the mask or wafer. The adjusting means can, for example, change at least one of: (i) partial coherence of the photolithography system, (ii) mask image illumination uniformity on the wafer or (iii) centroid position of the illumination flux in the entrance pupil. A particularly preferred adjusting means includes at least one vignetting mask that covers at least a portion of the at least two substantially equal radial segments of the parent aspheric mirror.

  1. Extreme-UV lithography condenser

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Sweeney, Donald W. (San Ramon, CA); Shafer, David (Fairfield, CT); McGuire, James (Pasadena, CA)

    2001-01-01

    Condenser system for use with a ringfield camera in projection lithography where the condenser includes a series of segments of a parent aspheric mirror having one foci at a quasi-point source of radiation and the other foci at the radius of a ringfield have all but one or all of their beams translated and rotated by sets of mirrors such that all of the beams pass through the real entrance pupil of a ringfield camera about one of the beams and fall onto the ringfield radius as a coincident image as an arc of the ringfield. The condenser has a set of correcting mirrors with one of the correcting mirrors of each set, or a mirror that is common to said sets of mirrors, from which the radiation emanates, is a concave mirror that is positioned to shape a beam segment having a chord angle of about 25 to 85 degrees into a second beam segment having a chord angle of about 0 to 60 degrees.

  2. Method to repair localized amplitude defects in a EUV lithography mask blank

    DOE Patents [OSTI]

    Stearns, Daniel G.; Sweeney, Donald W.; Mirkarimi, Paul B.; Chapman, Henry N.

    2005-11-22

    A method and apparatus are provided for the repair of an amplitude defect in a multilayer coating. A significant number of layers underneath the amplitude defect are undamaged. The repair technique restores the local reflectivity of the coating by physically removing the defect and leaving a wide, shallow crater that exposes the underlying intact layers. The particle, pit or scratch is first removed the remaining damaged region is etched away without disturbing the intact underlying layers.

  3. Coatings on reflective mask substrates

    DOE Patents [OSTI]

    Tong, William Man-Wai (Oakland, CA); Taylor, John S. (Livermore, CA); Hector, Scott D. (Oakland, CA); Mangat, Pawitter J. S. (Gilbert, AZ); Stivers, Alan R. (San Jose, CA); Kofron, Patrick G. (San Jose, CA); Thompson, Matthew A. (Austin, TX)

    2002-01-01

    A process for creating a mask substrate involving depositing: 1) a coating on one or both sides of a low thermal expansion material EUVL mask substrate to improve defect inspection, surface finishing, and defect levels; and 2) a high dielectric coating, on the backside to facilitate electrostatic chucking and to correct for any bowing caused by the stress imbalance imparted by either other deposited coatings or the multilayer coating of the mask substrate. An film, such as TaSi, may be deposited on the front side and/or back of the low thermal expansion material before the material coating to balance the stress. The low thermal expansion material with a silicon overlayer and a silicon and/or other conductive underlayer enables improved defect inspection and stress balancing.

  4. MoRu/Be multilayers for extreme ultraviolet applications

    DOE Patents [OSTI]

    Bajt, Sasa C. (Livermore, CA); Wall, Mark A. (Stockton, CA)

    2001-01-01

    High reflectance, low intrinsic roughness and low stress multilayer systems for extreme ultraviolet (EUV) lithography comprise amorphous layers MoRu and crystalline Be layers. Reflectance greater than 70% has been demonstrated for MoRu/Be multilayers with 50 bilayer pairs. Optical throughput of MoRu/Be multilayers can be 30-40% higher than that of Mo/Be multilayer coatings. The throughput can be improved using a diffusion barrier to make sharper interfaces. A capping layer on the top surface of the multilayer improves the long-term reflectance and EUV radiation stability of the multilayer by forming a very thin native oxide that is water resistant.

  5. "A Novel Objective for EUV Microscopy and EUV Lithography" Inventors...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Novel Objective for EUV Microscopy and EUV Lithography" Inventors ..--.. Manfred Bitter, Kenneth Hill, Philip Efthimion. This invention is a new x-ray scheme for stigmatic...

  6. Photo-lithography of xanthate precursor poly(p-phenylenevinylene...

    Office of Scientific and Technical Information (OSTI)

    of xanthate precursor poly(p-phenylenevinylene) polymers. Citation Details In-Document Search Title: Photo-lithography of xanthate precursor poly(p-phenylenevinylene) polymers. ...

  7. Demonstration of electronic pattern switching and 10x pattern demagnification in a maskless micro-ion beam reduction lithography system

    SciTech Connect (OSTI)

    Ngo, V.V.; Akker, B.; Leung, K.N.; Noh, I.; Scott, K.L.; Wilde, S.

    2002-05-31

    A proof-of-principle ion projection lithography (IPL) system called Maskless Micro-ion beam Reduction Lithography (MMRL) has been developed and tested at the Lawrence Berkeley National Laboratory (LBNL) for future integrated circuits (ICs) manufacturing and thin film media patterning [1]. This MMRL system is aimed at completely eliminating the first stage of the conventional IPL system [2] that contains the complicated beam optics design in front of the stencil mask and the mask itself. It consists of a multicusp RF plasma generator, a multi-beamlet pattern generator, and an all-electrostatic ion optical column. Results from ion beam exposures on PMMA and Shipley UVII-HS resists using 75 keV H+ are presented in this paper. Proof-of-principle electronic pattern switching together with 10x reduction ion optics (using a pattern generator made of nine 50-{micro}m switchable apertures) has been performed and is reported in this paper. In addition, the fabrication of a micro-fabricated pattern generator [3] on an SOI membrane is also presented.

  8. Resolution Improvement and Pattern Generator Development for theMaskless Micro-Ion-Beam Reduction Lithography System

    SciTech Connect (OSTI)

    Jiang, Ximan

    2006-05-18

    The shrinking of IC devices has followed the Moore's Law for over three decades, which states that the density of transistors on integrated circuits will double about every two years. This great achievement is obtained via continuous advance in lithography technology. With the adoption of complicated resolution enhancement technologies, such as the phase shifting mask (PSM), the optical proximity correction (OPC), optical lithography with wavelength of 193 nm has enabled 45 nm printing by immersion method. However, this achievement comes together with the skyrocketing cost of masks, which makes the production of low volume application-specific IC (ASIC) impractical. In order to provide an economical lithography approach for low to medium volume advanced IC fabrication, a maskless ion beam lithography method, called Maskless Micro-ion-beam Reduction Lithography (MMRL), has been developed in the Lawrence Berkeley National Laboratory. The development of the prototype MMRL system has been described by Dr. Vinh Van Ngo in his Ph.D. thesis. But the resolution realized on the prototype MMRL system was far from the design expectation. In order to improve the resolution of the MMRL system, the ion optical system has been investigated. By integrating a field-free limiting aperture into the optical column, reducing the electromagnetic interference and cleaning the RF plasma, the resolution has been improved to around 50 nm. Computational analysis indicates that the MMRL system can be operated with an exposure field size of 0.25 mm and a beam half angle of 1.0 mrad on the wafer plane. Ion-ion interactions have been studied with a two-particle physics model. The results are in excellent agreement with those published by the other research groups. The charge-interaction analysis of MMRL shows that the ion-ion interactions must be reduced in order to obtain a throughput higher than 10 wafers per hour on 300-mm wafers. In addition, two different maskless lithography strategies have been studied. The dependence of the throughput with the exposure field size and the speed of the mechanical stage has been investigated. In order to perform maskless lithography, different micro-fabricated pattern generators have been developed for the MMRL system. Ion beamlet switching has been successfully demonstrated on the MMRL system. A positive bias voltage around 10 volts is sufficient to switch off the ion current on the micro-fabricated pattern generators. Some unexpected problems, such as the high-energy secondary electron radiations, have been discovered during the experimental investigation. Thermal and structural analysis indicates that the aperture displacement error induced by thermal expansion can satisfy the 3{delta} CD requirement for lithography nodes down to 25 nm. The cross-talking effect near the surface and inside the apertures of the pattern generator has been simulated in a 3-D ray-tracing code. New pattern generator design has been proposed to reduce the cross-talking effect. In order to eliminate the surface charging effect caused by the secondary electrons, a new beam-switching scheme in which the switching electrodes are immersed in the plasma has been demonstrated on a mechanically fabricated pattern generator.

  9. Ultraviolet absorption hygrometer

    DOE Patents [OSTI]

    Gersh, M.E.; Bien, F.; Bernstein, L.S.

    1986-12-09

    An ultraviolet absorption hygrometer is provided including a source of pulsed ultraviolet radiation for providing radiation in a first wavelength region where water absorbs significantly and in a second proximate wavelength region where water absorbs weakly. Ultraviolet radiation in the first and second regions which has been transmitted through a sample path of atmosphere is detected. The intensity of the radiation transmitted in each of the first and second regions is compared and from this comparison the amount of water in the sample path is determined. 5 figs.

  10. Graphene nanoribbon superlattices fabricated via He ion lithography

    SciTech Connect (OSTI)

    Archanjo, Braulio S.; Fragneaud, Benjamin; Gustavo Canado, Luiz; Winston, Donald; Miao, Feng; Alberto Achete, Carlos; Medeiros-Ribeiro, Gilberto

    2014-05-12

    Single-step nano-lithography was performed on graphene sheets using a helium ion microscope. Parallel defect lines of ?1??m length and ?5?nm width were written to form nanoribbon gratings down to 20?nm pitch. Polarized Raman spectroscopy shows that crystallographic orientation of the nanoribbons was partially maintained at their lateral edges, indicating a high-fidelity lithography process. Furthermore, Raman analysis of large exposure areas with different ion doses reveals that He ions produce point defects with radii ? 2 smaller than do Ga ions, demonstrating that scanning-He{sup +}-beam lithography can texture graphene with less damage.

  11. Advanced Ultraviolet Spectroradiometer

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Advanced Ultraviolet Spectroradiometer A specialized instrument used to measure a portion of the ultraviolet (UV) spectrum was recently installed at the SGP central facility. The instrument, called an advanced UV spectroradiometer, was developed by Dr. Lee Harrison of the State University of New York at Albany and is funded by the United States Department of Agriculture (USDA). The sun emits a vast amount of energy in the form of electro- magnetic radiation. We see some of this energy as visible

  12. X-ray lithography using holographic images

    DOE Patents [OSTI]

    Howells, Malcolm R. (Berkeley, CA); Jacobsen, Chris (Sound Beach, NY)

    1995-01-01

    A non-contact X-ray projection lithography method for producing a desired X-ray image on a selected surface of an X-ray-sensitive material, such as photoresist material on a wafer, the desired X-ray image having image minimum linewidths as small as 0.063 .mu.m, or even smaller. A hologram and its position are determined that will produce the desired image on the selected surface when the hologram is irradiated with X-rays from a suitably monochromatic X-ray source of a selected wavelength .lambda.. On-axis X-ray transmission through, or off-axis X-ray reflection from, a hologram may be used here, with very different requirements for monochromaticity, flux and brightness of the X-ray source. For reasonable penetration of photoresist materials by X-rays produced by the X-ray source, the wavelength X, is preferably chosen to be no more than 13.5 nm in one embodiment and more preferably is chosen in the range 1-5 nm in the other embodiment. A lower limit on linewidth is set by the linewidth of available microstructure writing devices, such as an electron beam.

  13. Free electron laser with masked chicane

    DOE Patents [OSTI]

    Nguyen, Dinh C. (Los Alamos, NM); Carlsten, Bruce E. (Los Alamos, NM)

    1999-01-01

    A free electron laser (FEL) is provided with an accelerator for outputting electron beam pulses; a buncher for modulating each one of the electron beam pulses to form each pulse into longitudinally dispersed bunches of electrons; and a wiggler for generating coherent light from the longitudinally dispersed bunches of electrons. The electron beam buncher is a chicane having a mask for physically modulating the electron beam pulses to form a series of electron beam bunches for input to the wiggler. In a preferred embodiment, the mask is located in the chicane at a position where each electron beam pulse has a maximum dispersion.

  14. Microphotonic parabolic light directors fabricated by two-photon lithography

    SciTech Connect (OSTI)

    Atwater, Jackson H; Spinelli, P.; Kosten, Emily D; Parsons, J.; Van Lare, C; Van de Groep, J; Garcia de Abajo, J.; Polman, Albert; Atwater, Harry A.

    2011-01-01

    We have fabricated microphotonic parabolic light directors using two-photon lithography, thin-film processing, and aperture formation by focused ion beam lithography. Optical transmission measurements through upright parabolic directors 22 ?m high and 10 ?m in diameter exhibit strong beam directivity with a beam divergence of 5.6, in reasonable agreement with ray-tracing and full-field electromagnetic simulations. The results indicate the suitability of microphotonic parabolic light directors for producing collimated beams for applications in advanced solar cell and light-emitting diode designs.

  15. Translational-symmetry alternating phase shifting mask grating mark used in a linear measurement model of lithographic projection lens aberrations

    SciTech Connect (OSTI)

    Qiu Zicheng; Wang Xiangzhao; Bi Qunyu; Yuan Qiongyan; Peng Bo; Duan Lifeng

    2009-07-01

    A linear measurement model of lithographic projection lens aberrations is studied numerically based on the Hopkins theory of partially-coherent imaging and positive resist optical lithography (PROLITH) simulation. In this linearity model, the correlation between the mark's structure and its sensitivities to aberrations is analyzed. A method to design a mark with high sensitivity is proved and declared. By use of this method, a translational-symmetry alternating phase shifting mask (Alt-PSM) grating mark is redesigned with all of the even orders, {+-}3rd and {+-}5th order diffraction light missing. In the evaluation simulation, the measurement accuracies of aberrations prove to be enhanced apparently by use of the redesigned mark instead of the old ones.

  16. Ultratech Develops an Improved Lithography Tool for LED Wafer Manufacturing

    Broader source: Energy.gov [DOE]

    Ultratech modified an existing lithography tool used for semiconductor manufacturing to better meet the cost and performance targets of the high-brightness LED manufacturing industry. The goal was to make the equipment compatible with the wide range of substrate diameters and thicknesses prevalent in the industry while reducing the capital cost and the overall cost of ownership (COO).

  17. Dose masking feature for BNCT radiotherapy planning

    DOE Patents [OSTI]

    Cook, Jeremy L.; Wessol, Daniel E.; Wheeler, Floyd J.

    2000-01-01

    A system for displaying an accurate model of isodoses to be used in radiotherapy so that appropriate planning can be performed prior to actual treatment on a patient. The nature of the simulation of the radiotherapy planning for BNCT and Fast Neutron Therapy, etc., requires that the doses be computed in the entire volume. The "entire volume" includes the patient and beam geometries as well as the air spaces in between. Isodoses derived from the computed doses will therefore extend into the air regions between the patient and beam geometries and thus depict the unrealistic possibility that radiation deposition occurs in regions containing no physical media. This problem is solved by computing the doses for the entire geometry and then masking the physical and air regions along with the isodose contours superimposed over the patient image at the corresponding plane. The user is thus able to mask out (remove) the contour lines from the unwanted areas of the image by selecting the appropriate contour masking region from the raster image.

  18. Supersonic cluster jet source for debris-free extreme ultraviolet production

    SciTech Connect (OSTI)

    Kubiak, G.D.; Bernardez, L.J.

    1997-09-01

    The supersonic cluster jet has been developed and characterized for use as a target medium to produce a clean source of extreme ultraviolet radiation for extreme ultraviolet lithography and other applications. Spectroscopic characterization of the laser plasma emission produced from Xe, O{sub 2} and Kr cluster gas targets has been performed. Xe is the most efficient target gas, exhibiting a conversion efficiency at 13.5 nm of 0.8% into the relevant 2.5% spectral bandwidth. The other target gases are less efficient in the spectral region of interest and, in the case of oxygen, emit {approximately}5 times less off-band radiation. The angular distribution of the Xe plasma emission has also been characterized.

  19. Ultraviolet | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ultraviolet January 18, 2011 Richard Plantagenet was known as Richard, Duke of York and also father of Richard III, King of England. Richard III spent considerable time in Middleham, the village in which I was born. He pretty well ruled England from Middleham Castle. Later, we, the people, built the village from the stones of the castle, but there was enough left for my peers and I to climb into and play in during the summer months. We would climb the tower and look over the land, as Richard

  20. Optimizing laser produced plasmas for efficient extreme ultraviolet and soft X-ray light sources

    SciTech Connect (OSTI)

    Sizyuk, Tatyana; Hassanein, Ahmed [Center for Materials under Extreme Environment, School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

    2014-08-15

    Photon sources produced by laser beams with moderate laser intensities, up to 10{sup 14?}W/cm{sup 2}, are being developed for many industrial applications. The performance requirements for high volume manufacture devices necessitate extensive experimental research supported by theoretical plasma analysis and modeling predictions. We simulated laser produced plasma sources currently being developed for several applications such as extreme ultraviolet lithography using 13.5%??1% nm bandwidth, possibly beyond extreme ultraviolet lithography using 6. nm wavelengths, and water-window microscopy utilizing 2.48?nm (La-?) and 2.88?nm (He-?) emission. We comprehensively modeled plasma evolution from solid/liquid tin, gadolinium, and nitrogen targets as three promising materials for the above described sources, respectively. Results of our analysis for plasma characteristics during the entire course of plasma evolution showed the dependence of source conversion efficiency (CE), i.e., laser energy to photons at the desired wavelength, on plasma electron density gradient. Our results showed that utilizing laser intensities which produce hotter plasma than the optimum emission temperatures allows increasing CE for all considered sources that, however, restricted by the reabsorption processes around the main emission region and this restriction is especially actual for the 6.?nm sources.

  1. Method and apparatus for inspecting an EUV mask blank

    DOE Patents [OSTI]

    Goldberg, Kenneth A.

    2005-11-08

    An apparatus and method for at-wavelength EUV mask-blank characterization for inspection of moderate and low spatial frequency coating uniformity using a synchrotron or other source of EUV light. The apparatus provides for rapid, non-destruction, non-contact, at-wavelength qualification of large mask areas, and can be self-calibrating or be calibrated to well-characterized reference samples. It can further check for spatial variation of mask reflectivity or for global differences among masks. The apparatus and method is particularly suited for inspection of coating uniformity and quality and can detect defects in the order of 50 .mu.m and above.

  2. Low Cost Lithography Tool for High Brightness LED Manufacturing

    SciTech Connect (OSTI)

    Andrew Hawryluk; Emily True

    2012-06-30

    The objective of this activity was to address the need for improved manufacturing tools for LEDs. Improvements include lower cost (both capital equipment cost reductions and cost-ofownership reductions), better automation and better yields. To meet the DOE objective of $1- 2/kilolumen, it will be necessary to develop these highly automated manufacturing tools. Lithography is used extensively in the fabrication of high-brightness LEDs, but the tools used to date are not scalable to high-volume manufacturing. This activity addressed the LED lithography process. During R&D and low volume manufacturing, most LED companies use contact-printers. However, several industries have shown that these printers are incompatible with high volume manufacturing and the LED industry needs to evolve to projection steppers. The need for projection lithography tools for LED manufacturing is identified in the Solid State Lighting Manufacturing Roadmap Draft, June 2009. The Roadmap states that Projection tools are needed by 2011. This work will modify a stepper, originally designed for semiconductor manufacturing, for use in LED manufacturing. This work addresses improvements to yield, material handling, automation and throughput for LED manufacturing while reducing the capital equipment cost.

  3. Ultraviolet radiation induced discharge laser

    DOE Patents [OSTI]

    Gilson, Verle A. (Livermore, CA); Schriever, Richard L. (Livermore, CA); Shearer, James W. (Livermore, CA)

    1978-01-01

    An ultraviolet radiation source associated with a suitable cathode-anode electrode structure, disposed in a gas-filled cavity of a high pressure pulsed laser, such as a transverse electric atmosphere (TEA) laser, to achieve free electron production in the gas by photoelectric interaction between ultraviolet radiation and the cathode prior to the gas-exciting cathode-to-anode electrical discharge, thereby providing volume ionization of the gas. The ultraviolet radiation is produced by a light source or by a spark discharge.

  4. Low thermal distortion Extreme-UV lithography reticle and method

    DOE Patents [OSTI]

    Gianoulakis, Steven E. (Albuquerque, NM); Ray-Chaudhuri, Avijit K. (Livermore, CA)

    2002-01-01

    Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

  5. Low thermal distortion extreme-UV lithography reticle

    DOE Patents [OSTI]

    Gianoulakis, Steven E. (Albuquerque, NM); Ray-Chaudhuri, Avijit K. (Livermore, CA)

    2002-01-01

    Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

  6. Low thermal distortion extreme-UV lithography reticle

    DOE Patents [OSTI]

    Gianoulakis, Steven E. (Albuquerque, NM); Ray-Chaudhuri, Avijit K. (Livermore, CA)

    2001-01-01

    Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

  7. Gray scale x-ray mask

    DOE Patents [OSTI]

    Morales, Alfredo M. (Livermore, CA); Gonzales, Marcela (Seattle, WA)

    2006-03-07

    The present invention describes a method for fabricating an embossing tool or an x-ray mask tool, providing microstructures that smoothly vary in height from point-to-point in etched substrates, i.e., structure which can vary in all three dimensions. The process uses a lithographic technique to transfer an image pattern in the surface of a silicon wafer by exposing and developing the resist and then etching the silicon substrate. Importantly, the photoresist is variably exposed so that when developed some of the resist layer remains. The remaining undeveloped resist acts as an etchant barrier to the reactive plasma used to etch the silicon substrate and therefore provides the ability etch structures of variable depths.

  8. Phase-shifting point diffraction interferometer mask designs

    DOE Patents [OSTI]

    Goldberg, Kenneth Alan (Berkeley, CA)

    2001-01-01

    In a phase-shifting point diffraction interferometer, different image-plane mask designs can improve the operation of the interferometer. By keeping the test beam window of the mask small compared to the separation distance between the beams, the problem of energy from the reference beam leaking through the test beam window is reduced. By rotating the grating and mask 45.degree., only a single one-dimensional translation stage is required for phase-shifting. By keeping two reference pinholes in the same orientation about the test beam window, only a single grating orientation, and thus a single one-dimensional translation stage, is required. The use of a two-dimensional grating allows for a multiplicity of pinholes to be used about the pattern of diffracted orders of the grating at the mask. Orientation marks on the mask can be used to orient the device and indicate the position of the reference pinholes.

  9. Micropatterning of metal substrate by adhesive force lithography

    SciTech Connect (OSTI)

    Seo, Soon-min; Park, Jeong-yong; Lee, Hong H.

    2005-03-28

    We introduce adhesive force lithography (AFL), a detachment-based method for patterning metal surface. In this method, all the polymer layer except for the desired pattern gets lifted up from the metal surface. The craze microstructure unique to thin polymer films on the order of 10{sup 2} nm is utilized for this AFL along with a difference in adhesive force at two interfaces. Poly(urethaneacrylate) mold, which has a high enough work of adhesion with polymer, makes AFL effective. This technique is purely additive, fast ({approx}10 s contact time), and applicable to large area patterning (10 cmx10 cm)

  10. Mask-assisted seeded growth of segmented metallic heteronanostructures

    SciTech Connect (OSTI)

    Crane, Cameron C.; Tao, Jing; Wang, Feng; Zhu, Yimei; Chen, Jingyi

    2014-11-24

    Controlling the deposition of exotic metals in the seeded growth of multi-metal nanostructures is challenging. This work describes a seeded growth method assisted by a mask for synthesis of segmented binary or ternary metal nanostructures. Silica is used as a mask to partially block the surface of a seed and a second metal is subsequently deposited on the exposed area, forming a bimetallic heterodimer. The initial demonstration was carried out on a Au seed, followed by deposition of Pd or Pt on the seed. It was found that Pd tends to spread out laterally on the seed while Pt inclines to grow vertically into branched topology on Au. Without removal of the SiO? mask, Pt could be further deposited on the unblocked Pd of the Pd-Au dimer to form a Pt-Pd-Au trimer. The mask-assisted seeded growth provides a general strategy to construct segmented metallic nanoarchitectures.

  11. Mask-Assisted Seeded Growth of Segmented Metallic Heteronanostructures

    SciTech Connect (OSTI)

    Crane, Cameron C.; Tao, Jing; Wang, Feng; Zhu, Yimei; Chen, Jingyi

    2014-12-04

    Controlling the deposition of exotic metals in the seeded growth of multi-metal nanostructures is challenging. This work describes a seeded growth method assisted by a mask for synthesis of segmented binary or ternary metal nanostructures. Silica is used as a mask to partially block the surface of a seed and a second metal is subsequently deposited on the exposed area, forming a bimetallic heterodimer. The initial demonstration was carried out on a Au seed, followed by deposition of Pd or Pt on the seed. It was found that Pd tends to spread out laterally on the seed while Pt inclines to grow vertically into branched topology on Au. Without removal of the SiO? mask, Pt could be further deposited on the unblocked Pd of the Pd-Au dimer to form a Pt-Pd-Au trimer. The mask-assisted seeded growth provides a general strategy to construct segmented metallic nanoarchitectures.

  12. Mask-Assisted Seeded Growth of Segmented Metallic Heteronanostructures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Crane, Cameron C.; Tao, Jing; Wang, Feng; Zhu, Yimei; Chen, Jingyi

    2014-12-04

    Controlling the deposition of exotic metals in the seeded growth of multi-metal nanostructures is challenging. This work describes a seeded growth method assisted by a mask for synthesis of segmented binary or ternary metal nanostructures. Silica is used as a mask to partially block the surface of a seed and a second metal is subsequently deposited on the exposed area, forming a bimetallic heterodimer. The initial demonstration was carried out on a Au seed, followed by deposition of Pd or Pt on the seed. It was found that Pd tends to spread out laterally on the seed while Pt inclinesmore » to grow vertically into branched topology on Au. Without removal of the SiO₂ mask, Pt could be further deposited on the unblocked Pd of the Pd-Au dimer to form a Pt-Pd-Au trimer. The mask-assisted seeded growth provides a general strategy to construct segmented metallic nanoarchitectures.« less

  13. Lithography process for patterning HgI2 photonic devices

    DOE Patents [OSTI]

    Mescher, Mark J.; James, Ralph B.; Hermon, Haim

    2004-11-23

    A photolithographic process forms patterns on HgI.sub.2 surfaces and defines metal sublimation masks and electrodes to substantially improve device performance by increasing the realizable design space. Techniques for smoothing HgI.sub.2 surfaces and for producing trenches in HgI.sub.2 are provided. A sublimation process is described which produces etched-trench devices with enhanced electron-transport-only behavior.

  14. Bubble masks for time-encoded imaging of fast neutrons.

    SciTech Connect (OSTI)

    Brubaker, Erik; Brennan, James S.; Marleau, Peter; Nowack, Aaron B.; Steele, John; Sweany, Melinda; Throckmorton, Daniel J.

    2013-09-01

    Time-encoded imaging is an approach to directional radiation detection that is being developed at SNL with a focus on fast neutron directional detection. In this technique, a time modulation of a detected neutron signal is induced-typically, a moving mask that attenuates neutrons with a time structure that depends on the source position. An important challenge in time-encoded imaging is to develop high-resolution two-dimensional imaging capabilities; building a mechanically moving high-resolution mask presents challenges both theoretical and technical. We have investigated an alternative to mechanical masks that replaces the solid mask with a liquid such as mineral oil. Instead of fixed blocks of solid material that move in pre-defined patterns, the oil is contained in tubing structures, and carefully introduced air gaps-bubbles-propagate through the tubing, generating moving patterns of oil mask elements and air apertures. Compared to current moving-mask techniques, the bubble mask is simple, since mechanical motion is replaced by gravity-driven bubble propagation; it is flexible, since arbitrary bubble patterns can be generated by a software-controlled valve actuator; and it is potentially high performance, since the tubing and bubble size can be tuned for high-resolution imaging requirements. We have built and tested various single-tube mask elements, and will present results on bubble introduction and propagation as a function of tubing size and cross-sectional shape; real-time bubble position tracking; neutron source imaging tests; and reconstruction techniques demonstrated on simple test data as well as a simulated full detector system.

  15. Lyalpha EMITTERS IN HIERARCHICAL GALAXY FORMATION. II. ULTRAVIOLET...

    Office of Scientific and Technical Information (OSTI)

    Lyalpha EMITTERS IN HIERARCHICAL GALAXY FORMATION. II. ULTRAVIOLET CONTINUUM LUMINOSITY ... FORMATION. II. ULTRAVIOLET CONTINUUM LUMINOSITY FUNCTION AND EQUIVALENT WIDTH ...

  16. Development of ion sources for ion projection lithography

    SciTech Connect (OSTI)

    Lee, Y.; Gough, R.A.; Kunkel, W.B.; Leung, K.N.; Perkins, L.T.

    1996-05-01

    Multicusp ion sources are capable of generating ion beams with low axial energy spread as required by the Ion Projection Lithography (IPL). Longitudinal ion energy spread has been studied in two different types of plasma discharge: the filament discharge ion source characterized by its low axial energy spread, and the RF-driven ion source characterized by its long source lifetime. For He{sup +} ions, longitudinal ion energy spreads of 1-2 eV were measured for a filament discharge multicusp ion source which is within the IPL device requirements. Ion beams with larger axial energy spread were observed in the RF-driven source. A double-chamber ion source has been designed which combines the advantages of low axial energy spread of the filament discharge ion source with the long lifetime of the RF-driven source. The energy spread of the double chamber source is lower than that of the RF-driven source.

  17. Holographic illuminator for synchrotron-based projection lithography systems

    DOE Patents [OSTI]

    Naulleau, Patrick P.

    2005-08-09

    The effective coherence of a synchrotron beam line can be tailored to projection lithography requirements by employing a moving holographic diffuser and a stationary low-cost spherical mirror. The invention is particularly suited for use in an illuminator device for an optical image processing system requiring partially coherent illumination. The illuminator includes: (1) a synchrotron source of coherent or partially coherent radiation which has an intrinsic coherence that is higher than the desired coherence, (2) a holographic diffuser having a surface that receives incident radiation from said source, (3) means for translating the surface of the holographic diffuser in two dimensions along a plane that is parallel to the surface of the holographic diffuser wherein the rate of the motion is fast relative to integration time of said image processing system; and (4) a condenser optic that re-images the surface of the holographic diffuser to the entrance plane of said image processing system.

  18. Sequential Infiltration Synthesis Advances Lithography (IN-10-017, 10-106)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    - Energy Innovation Portal Industrial Technologies Industrial Technologies Advanced Materials Advanced Materials Find More Like This Return to Search Sequential Infiltration Synthesis Advances Lithography (IN-10-017, 10-106) A unique lithography resist transformation process that dramatically improves image quality while reducing cost. Argonne National Laboratory Contact ANL About This Technology <p> Directed self-assembly (DSA) of block copolymers is targeted as a next-generation

  19. Photo-lithography of xanthate precursor poly(p-phenylenevinylene) polymers.

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Conference: Photo-lithography of xanthate precursor poly(p-phenylenevinylene) polymers. Citation Details In-Document Search Title: Photo-lithography of xanthate precursor poly(p-phenylenevinylene) polymers. Conjugated polymers such as poly(p-phenylenevinylene) (PPV) have attracted a great deal of attention due to their optoelectronic properties. The ability to control the lateral spatial resolution of conjugated polymers will allow for improved integration into

  20. Coma measurement by use of an alternating phase-shifting mask mark with a specific phase width

    SciTech Connect (OSTI)

    Qiu Zicheng; Wang Xiangzhao; Yuan Qiongyan; Wang Fan

    2009-01-10

    The correlation between the coma sensitivity of the alternating phase-shifting mask (Alt-PSM) mark and the mark's structure is studied based on the Hopkins theory of partially coherent imaging and positive resist optical lithography (PROLITH) simulation. It is found that an optimized Alt-PSM mark with its phase width being two-thirds its pitch has a higher sensitivity to coma than Alt-PSM marks with the same pitch and the different phase widths. The pitch of the Alt-PSM mark is also optimized by PROLITH simulation, and the structure of p=1.92{lambda}/NA and pw=2p/3 proves to be with the highest sensitivity. The optimized Alt-PSM mark is used as a measurement mark to retrieve coma aberration from the projection optics in lithographic tools. In comparison with an ordinary Alt-PSM mark with its phase width being a half its pitch, the measurement accuracies of Z7 and Z14 apparently increase.

  1. X-ray mask and method for providing same

    DOE Patents [OSTI]

    Morales, Alfredo M.; Skala, Dawn M.

    2002-01-01

    The present invention describes a method for fabricating an x-ray mask tool which can achieve pattern features having lateral dimension of less than 1 micron. The process uses a thin photoresist and a standard lithographic mask to transfer an trace image pattern in the surface of a silicon wafer by exposing and developing the resist. The exposed portion of the silicon substrate is then anisotropically etched to provide an etched image of the trace image pattern consisting of a series of channels in the silicon having a high depth-to-width aspect ratio. These channels are then filled by depositing a metal such as gold to provide an inverse image of the trace image and thereby providing a robust x-ray mask tool.

  2. X-ray mask and method for providing same

    DOE Patents [OSTI]

    Morales, Alfredo M. (Pleasanton, CA); Skala, Dawn M. (Fremont, CA)

    2004-09-28

    The present invention describes a method for fabricating an x-ray mask tool which can achieve pattern features having lateral dimension of less than 1 micron. The process uses a thin photoresist and a standard lithographic mask to transfer an trace image pattern in the surface of a silicon wafer by exposing and developing the resist. The exposed portion of the silicon substrate is then anisotropically etched to provide an etched image of the trace image pattern consisting of a series of channels in the silicon having a high depth-to-width aspect ratio. These channels are then filled by depositing a metal such as gold to provide an inverse image of the trace image and thereby providing a robust x-ray mask tool.

  3. Ga lithography in sputtered niobium for superconductive micro and nanowires

    SciTech Connect (OSTI)

    Henry, M. David; Wolfley, Steve; Monson, Todd; Lewis, Rupert

    2014-08-18

    This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12?nm deep with a 14?nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10??m by 10??m and 100??m by 100??m, demonstrate that doses above than 7.5??10{sup 15?}cm{sup ?2} at 30?kV provide adequate mask protection for a 205?nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75?nm wide by 10??m long connected to 50??m wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T{sub c})?=?7.7?K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.

  4. System for generating two-dimensional masks from a three-dimensional model using topological analysis

    DOE Patents [OSTI]

    Schiek, Richard (Albuquerque, NM)

    2006-06-20

    A method of generating two-dimensional masks from a three-dimensional model comprises providing a three-dimensional model representing a micro-electro-mechanical structure for manufacture and a description of process mask requirements, reducing the three-dimensional model to a topological description of unique cross sections, and selecting candidate masks from the unique cross sections and the cross section topology. The method further can comprise reconciling the candidate masks based on the process mask requirements description to produce two-dimensional process masks.

  5. Fundamentals of embossing nanoimprint lithography in polymer substrates.

    SciTech Connect (OSTI)

    Simmons, Blake Alexander; King, William P.

    2011-02-01

    The convergence of micro-/nano-electromechanical systems (MEMS/NEMS) and biomedical industries is creating a need for innovation and discovery around materials, particularly in miniaturized systems that use polymers as the primary substrate. Polymers are ubiquitous in the microelectronics industry and are used as sensing materials, lithography tools, replication molds, microfluidics, nanofluidics, and biomedical devices. This diverse set of operational requirements dictates that the materials employed must possess different properties in order to reduce the cost of production, decrease the scale of devices to the appropriate degree, and generate engineered devices with new functional properties at cost-competitive levels of production. Nanoscale control of polymer deformation at a massive scale would enable breakthroughs in all of the aforementioned applications, but is currently beyond the current capabilities of mass manufacturing. This project was focused on developing a fundamental understanding of how polymers behave under different loads and environments at the nanoscale in terms of performance and fidelity in order to fill the most critical gaps in our current knowledgebase on this topic.

  6. Microgap ultra-violet detector

    DOE Patents [OSTI]

    Wuest, Craig R. (Danville, CA); Bionta, Richard M. (Livermore, CA)

    1994-01-01

    A microgap ultra-violet detector of photons with wavelengths less than 400 run (4000 Angstroms) which comprises an anode and a cathode separated by a gas-filled gap and having an electric field placed across the gap. Either the anode or the cathode is semi-transparent to UV light. Upon a UV photon striking the cathode an electron is expelled and accelerated across the gap by the electric field causing interactions with other electrons to create an electron avalanche which contacts the anode. The electron avalanche is detected and converted to an output pulse.

  7. Microgap ultra-violet detector

    DOE Patents [OSTI]

    Wuest, C.R.; Bionta, R.M.

    1994-09-20

    A microgap ultra-violet detector of photons with wavelengths less than 400 run (4,000 Angstroms) which comprises an anode and a cathode separated by a gas-filled gap and having an electric field placed across the gap is disclosed. Either the anode or the cathode is semi-transparent to UV light. Upon a UV photon striking the cathode an electron is expelled and accelerated across the gap by the electric field causing interactions with other electrons to create an electron avalanche which contacts the anode. The electron avalanche is detected and converted to an output pulse. 2 figs.

  8. Lithography with MeV Energy Ions for Biomedical Applications: Accelerator Considerations

    SciTech Connect (OSTI)

    Sangyuenyongpipat, S.; Whitlow, H. J.; Nakagawa, S. T.; Yoshida, E.

    2009-03-10

    MeV ion beam lithographies are very powerful techniques for 3D direct writing in positive or negative photoresist materials. Nanometer-scale rough structures, or clear areas with straight vertical sidewalls as thin as a few 10's of nm in a resist of a few nm to 100 {mu}m thickness can be made. These capabilities are particularly useful for lithography in cellular- and sub-cellular level biomedical research and technology applications. It can be used for tailor making special structures such as optical waveguides, biosensors, DNA sorters, spotting plates, systems for DNA, protein and cell separation, special cell-growth substrates and microfluidic lab-on-a-chip devices. Furthermore MeV ion beam lithography can be used for rapid prototyping, and also making master stamps and moulds for mass production by hot embossing and nanoimprint lithography. The accelerator requirements for three different high energy ion beam lithography techniques are overviewed. We consider the special requirements placed on the accelerator and how this is achieved for a commercial proton beam writing tool.

  9. Ultraviolet Thomson scattering measurements of the electron feature...

    Office of Scientific and Technical Information (OSTI)

    Ultraviolet Thomson scattering measurements of the electron feature with an energetic 263 nm probe Citation Details In-Document Search Title: Ultraviolet Thomson scattering...

  10. Virtually distortion-free imaging system for large field, high resolution lithography

    DOE Patents [OSTI]

    Hawryluk, A.M.; Ceglio, N.M.

    1993-01-05

    Virtually distortion free large field high resolution imaging is performed using an imaging system which contains large field distortion or field curvature. A reticle is imaged in one direction through the optical system to form an encoded mask. The encoded mask is then imaged back through the imaging system onto a wafer positioned at the reticle position.

  11. Soft X-ray Lithography Beamline at the Siam Photon Laboratory

    SciTech Connect (OSTI)

    Klysubun, P.; Chomnawang, N.; Songsiriritthigul, P.

    2007-01-19

    Construction of a soft x-ray lithography beamline utilizing synchrotron radiation generated by one of the bending magnets at the Siam Photon Laboratory is finished and the beamline is currently in a commissioning period. The beamline was modified from the existing monitoring beamline and is intended for soft x-ray lithographic processing and radiation biological research. The lithography exposure station with a compact one-dimensional scanning mechanism was constructed and assembled in-house. The front-end of the beamline has been modified to allow larger exposure area. The exposure station for studying radiation effects on biological samples will be set up in tandem with the lithography station, with a Mylar window for isolation. Several improvements to both the beamline and the exposure stations, such as improved scanning speed and the ability to adjust the exposure spectrum by means of low-Z filters, are planned and will be implemented in the near future.

  12. Fabrication of moth-eye structures on silicon by direct six-beam laser interference lithography

    SciTech Connect (OSTI)

    Xu, Jia; Zhang, Ziang; Weng, Zhankun; Wang, Zuobin Wang, Dapeng

    2014-05-28

    This paper presents a new method for the generation of cross-scale laser interference patterns and the fabrication of moth-eye structures on silicon. In the method, moth-eye structures were produced on a surface of silicon wafer using direct six-beam laser interference lithography to improve the antireflection performance of the material surface. The periodic dot arrays of the moth-eye structures were formed due to the ablation of the irradiance distribution of interference patterns on the wafer surface. The shape, size, and distribution of the moth-eye structures can be adjusted by controlling the wavelength, incidence angles, and exposure doses in a direct six-beam laser interference lithography setup. The theoretical and experimental results have shown that direct six-beam laser interference lithography can provide a way to fabricate cross-scale moth-eye structures for antireflection applications.

  13. X-ray mask and method for making

    DOE Patents [OSTI]

    Morales, Alfredo M.

    2004-10-26

    The present invention describes a method for fabricating an x-ray mask tool which is a contact lithographic mask which can provide an x-ray exposure dose which is adjustable from point-to-point. The tool is useful in the preparation of LIGA plating molds made from PMMA, or similar materials. In particular the tool is useful for providing an ability to apply a graded, or "stepped" x-ray exposure dose across a photosensitive substrate. By controlling the x-ray radiation dose from point-to-point, it is possible to control the development process for removing exposed portions of the substrate; adjusting it such that each of these portions develops at a more or less uniformly rate regardless of feature size or feature density distribution.

  14. Tin removal from extreme ultraviolet collector optics by inductively coupled plasma reactive ion etching

    SciTech Connect (OSTI)

    Shin, H.; Srivastava, S. N.; Ruzic, D. N. [Center for Plasma Material Interactions, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

    2008-05-15

    Tin (Sn) has the advantage of delivering higher conversion efficiency compared to other fuel materials (e.g., Xe or Li) in an extreme ultraviolet (EUV) source, a necessary component for the leading next generation lithography. However, the use of a condensable fuel in a lithography system leads to some additional challenges for maintaining a satisfactory lifetime of the collector optics. A critical issue leading to decreased mirror lifetime is the buildup of debris on the surface of the primary mirror that comes from the use of Sn in either gas discharge produced plasma (GDPP) or laser produced plasma (LPP). This leads to a decreased reflectivity from the added material thickness and increased surface roughness that contributes to scattering. Inductively coupled plasma reactive ion etching with halide ions is one potential solution to this problem. This article presents results for etch rate and selectivity of Sn over SiO{sub 2} and Ru. The Sn etch rate in a chlorine plasma is found to be much higher (of the order of hundreds of nm/min) than the etch rate of other materials. A thermally evaporated Sn on Ru sample was prepared and cleaned using an inductively coupled plasma etching method. Cleaning was confirmed using several material characterization techniques. Furthermore, a collector mock-up shell was then constructed and etching was performed on Sn samples prepared in a Sn EUV source using an optimized etching recipe. The sample surface before and after cleaning was analyzed by atomic force microscopy, x-ray photoelectron spectroscopy, and Auger electron spectroscopy. The results show the dependence of etch rate on the location of Sn samples placed on the collector mock-up shell.

  15. Ultraviolet Behavior of N = 8 supergravity

    SciTech Connect (OSTI)

    Dixon, Lance J.

    2010-06-07

    In these lectures the author describes the remarkable ultraviolet behavior of N = 8 supergravity, which through four loops is no worse than that of N = 4 super-Yang-Mills theory (a finite theory). I also explain the computational tools that allow multi-loop amplitudes to be evaluated in this theory - the KLT relations and the unitarity method - and sketch how ultraviolet divergences are extracted from the amplitudes.

  16. ATOMIC FORCE LITHOGRAPHY OF NANO MICROFLUIDIC CHANNELS FOR VERIFICATION AND MONITORING IN AQUEOUS SOLUTIONS

    SciTech Connect (OSTI)

    Torres, R.; Mendez-Torres, A.; Lam, P.

    2011-06-09

    The growing interest in the physics of fluidic flow in nanoscale channels, as well as the possibility for high sensitive detection of ions and single molecules is driving the development of nanofluidic channels. The enrichment of charged analytes due to electric field-controlled flow and surface charge/dipole interactions along the channel can lead to enhancement of sensitivity and limits-of-detection in sensor instruments. Nuclear material processing, waste remediation, and nuclear non-proliferation applications can greatly benefit from this capability. Atomic force microscopy (AFM) provides a low-cost alternative for the machining of disposable nanochannels. The small AFM tip diameter (< 10 nm) can provide for features at scales restricted in conventional optical and electron-beam lithography. This work presents preliminary results on the fabrication of nano/microfluidic channels on polymer films deposited on quartz substrates by AFM lithography.

  17. ATOMIC FORCE LITHOGRAPHY OF NANO/MICROFLUIDIC CHANNELS FOR VERIFICATION AND MONITORING OF AQUEOUS SOLUTIONS

    SciTech Connect (OSTI)

    Mendez-Torres, A.; Torres, R.; Lam, P.

    2011-07-15

    The growing interest in the physics of fluidic flow in nanoscale channels, as well as the possibility for high sensitive detection of ions and single molecules is driving the development of nanofluidic channels. The enrichment of charged analytes due to electric field-controlled flow and surface charge/dipole interactions along the channel can lead to enhancement of sensitivity and limits-of-detection in sensor instruments. Nuclear material processing, waste remediation, and nuclear non-proliferation applications can greatly benefit from this capability. Atomic force microscopy (AFM) provides a low-cost alternative for the machining of disposable nanochannels. The small AFM tip diameter (< 10 nm) can provide for features at scales restricted in conventional optical and electron-beam lithography. This work presents preliminary results on the fabrication of nano/microfluidic channels on polymer films deposited on quartz substrates by AFM lithography.

  18. Compensation of flare-induced CD changes EUVL

    DOE Patents [OSTI]

    Bjorkholm, John E. (Pleasanton, CA); Stearns, Daniel G. (Los Altos, CA); Gullikson, Eric M. (Oakland, CA); Tichenor, Daniel A. (Castro Valley, CA); Hector, Scott D. (Oakland, CA)

    2004-11-09

    A method for compensating for flare-induced critical dimensions (CD) changes in photolithography. Changes in the flare level results in undesirable CD changes. The method when used in extreme ultraviolet (EUV) lithography essentially eliminates the unwanted CD changes. The method is based on the recognition that the intrinsic level of flare for an EUV camera (the flare level for an isolated sub-resolution opaque dot in a bright field mask) is essentially constant over the image field. The method involves calculating the flare and its variation over the area of a patterned mask that will be imaged and then using mask biasing to largely eliminate the CD variations that the flare and its variations would otherwise cause. This method would be difficult to apply to optical or DUV lithography since the intrinsic flare for those lithographies is not constant over the image field.

  19. Mask effects on cosmological studies with weak-lensing peak statistics

    SciTech Connect (OSTI)

    Liu, Xiangkun; Pan, Chuzhong; Fan, Zuhui; Wang, Qiao

    2014-03-20

    With numerical simulations, we analyze in detail how the bad data removal, i.e., the mask effect, can influence the peak statistics of the weak-lensing convergence field reconstructed from the shear measurement of background galaxies. It is found that high peak fractions are systematically enhanced because of the presence of masks; the larger the masked area is, the higher the enhancement is. In the case where the total masked area is about 13% of the survey area, the fraction of peaks with signal-to-noise ratio ? ? 3 is ?11% of the total number of peaks, compared with ?7% of the mask-free case in our considered cosmological model. This can have significant effects on cosmological studies with weak-lensing convergence peak statistics, inducing a large bias in the parameter constraints if the effects are not taken into account properly. Even for a survey area of 9 deg{sup 2}, the bias in (? {sub m}, ?{sub 8}) is already intolerably large and close to 3?. It is noted that most of the affected peaks are close to the masked regions. Therefore, excluding peaks in those regions in the peak statistics can reduce the bias effect but at the expense of losing usable survey areas. Further investigations find that the enhancement of the number of high peaks around the masked regions can be largely attributed to the smaller number of galaxies usable in the weak-lensing convergence reconstruction, leading to higher noise than that of the areas away from the masks. We thus develop a model in which we exclude only those very large masks with radius larger than 3' but keep all the other masked regions in peak counting statistics. For the remaining part, we treat the areas close to and away from the masked regions separately with different noise levels. It is shown that this two-noise-level model can account for the mask effect on peak statistics very well, and the bias in cosmological parameters is significantly reduced if this model is applied in the parameter fitting.

  20. Diffraction spectral filter for use in extreme-UV lithography condenser

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Tichenor, Daniel A. (Castro Valley, CA); Bernardez, Luis J. (Livermore, CA)

    2002-01-01

    A condenser system for generating a beam of radiation includes a source of radiation light that generates a continuous spectrum of radiation light; a condenser comprising one or more first optical elements for collecting radiation from the source of radiation light and for generating a beam of radiation; and a diffractive spectral filter for separating first radiation light having a particular wavelength from the continuous spectrum of radiation light. Cooling devices can be employed to remove heat generated. The condenser system can be used with a ringfield camera in projection lithography.

  1. Maskless Lithography and in situ Visualization of Conductivity of Graphene using Helium Ion Microscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Iberi, Vighter O.; Vlassiouk, Ivan V.; Zhang, X. -G.; Matola, Brad R.; Linn, Allison R.; Joy, David Charles; Adam Justin Rondinone

    2015-07-07

    The remarkable mechanical and electronic properties of graphene make it an ideal candidate for next generation nanoelectronics. With the recent development of commercial-level single-crystal graphene layers, the potential for manufacturing household graphene-based devices has improved, but significant challenges still remain with regards to patterning the graphene into devices. In the case of graphene supported on a substrate, traditional nanofabrication techniques such as e-beam lithography (EBL) are often used in fabricating graphene nanoribbons but the multi-step processes they require can result in contamination of the graphene with resists and solvents. In this letter, we report the utility of scanning helium ionmore » lithography for fabricating functional graphene nanoconductors that are supported directly on a silicon dioxide layer, and we measure the minimum feature size achievable due to limitations imposed by thermal fluctuations and ion scattering during the milling process. Further we demonstrate that ion beams, due to their positive charging nature, may be used to observe and test the conductivity of graphene-based nanoelectronic devices in situ.« less

  2. Soft holographic interference lithography microlens for enhanced organic light emitting diode light extraction

    SciTech Connect (OSTI)

    Park, Joong-Mok; Gan, Zhengqing; Leung, Wai Y.; Liu, Rui; Ye, Zhuo; Constant, Kristen; Shinar, Joseph; Shinar, Ruth; Ho, Kai-Ming

    2011-06-06

    Very uniform 2 {micro}m-pitch square microlens arrays ({micro}LAs), embossed on the blank glass side of an indium-tin-oxide (ITO)-coated 1.1 mm-thick glass, are used to enhance light extraction from organic light-emitting diodes (OLEDs) by {approx}100%, significantly higher than enhancements reported previously. The array design and size relative to the OLED pixel size appear to be responsible for this enhancement. The arrays are fabricated by very economical soft lithography imprinting of a polydimethylsiloxane (PDMS) mold (itself obtained from a Ni master stamp that is generated from holographic interference lithography of a photoresist) on a UV-curable polyurethane drop placed on the glass. Green and blue OLEDs are then fabricated on the ITO to complete the device. When the {mu}LA is {approx}15 x 15 mm{sup 2}, i.e., much larger than the {approx}3 x 3 mm{sup 2} OLED pixel, the electroluminescence (EL) in the forward direction is enhanced by {approx}100%. Similarly, a 19 x 25 mm{sup 2} {mu}LA enhances the EL extracted from a 3 x 3 array of 2 x 2 mm{sup 2} OLED pixels by 96%. Simulations that include the effects of absorption in the organic and ITO layers are in accordance with the experimental results and indicate that a thinner 0.7 mm thick glass would yield a {approx}140% enhancement.

  3. Vacuum-ultraviolet photoreduction of graphene oxide: Electrical...

    Office of Scientific and Technical Information (OSTI)

    Vacuum-ultraviolet photoreduction of graphene oxide: Electrical conductivity of entirely reduced single sheets and reduced micro line patterns Citation Details In-Document Search...

  4. Study of nano imprinting using soft lithography on Krafty glue and PVDF polymer thin films

    SciTech Connect (OSTI)

    Sankar, M. S. Ravi, E-mail: rameshg.phy@pondiuni.edu; Gangineni, Ramesh Babu, E-mail: rameshg.phy@pondiuni.edu [Department of Physics, Pondicherry University, R. V. Nagar, Kalapet, Puducherry - 605014 (India)

    2014-04-24

    The present work reveals soft lithography strategy based on self assembly and replica molding for carrying out micro and nanofabrication. It provides a convenient, effective and very low cost method for the formation and manufacturing of micro and nano structures. Al-layer of compact disc (sony CD-R) used as a stamp with patterned relief structures to generate patterns and structures with pattern size of 100nm height, 1.7 ?m wide. In literature, PDMS (Polydimethylsiloxane) solution is widely used to get negative copy of the Al-layer. In this work, we have used inexpensive white glue (Polyvinylacetate + water), 15gm (?5) and PVDF (Polyvinylidene difluoride) spin coated films and successfully transferred the nano patterns of Al layer on to white glue and PVDF films.

  5. Ultraviolet laser beam monitor using radiation responsive crystals

    DOE Patents [OSTI]

    McCann, Michael P. (Oliver Springs, TN); Chen, Chung H. (Knoxville, TN)

    1988-01-01

    An apparatus and method for monitoring an ultraviolet laser beam includes disposing in the path of an ultraviolet laser beam a substantially transparent crystal that will produce a color pattern in response to ultraviolet radiation. The crystal is exposed to the ultraviolet laser beam and a color pattern is produced within the crystal corresponding to the laser beam intensity distribution therein. The crystal is then exposed to visible light, and the color pattern is observed by means of the visible light to determine the characteristics of the laser beam that passed through crystal. In this manner, a perpendicular cross sectional intensity profile and a longitudinal intensity profile of the ultraviolet laser beam may be determined. The observation of the color pattern may be made with forward or back scattered light and may be made with the naked eye or with optical systems such as microscopes and television cameras.

  6. Virtually distortion-free imaging system for large field, high resolution lithography using electrons, ions or other particle beams

    DOE Patents [OSTI]

    Hawryluk, A.M.; Ceglio, N.M.

    1993-01-12

    Virtually distortion free large field high resolution imaging is performed using an imaging system which contains large field distortion or field curvature. A reticle is imaged in one direction through the optical system to form an encoded mask. The encoded mask is then imaged back through the imaging system onto a wafer positioned at the reticle position. Particle beams, including electrons, ions and neutral particles, may be used as well as electromagnetic radiation.

  7. Phase-shifting point diffraction interferometer focus-aid enhanced mask

    DOE Patents [OSTI]

    Naulleau, Patrick (5239 Miles Ave., Apt. A, Oakland, CA 94618)

    2000-01-01

    A phase-shifting point diffraction interferometer system (PS/PDI) employing a PS/PDI mask that includes a PDI focus aid is provided. The PDI focus aid mask includes a large or secondary reference pinhole that is slightly displaced from the true or primary reference pinhole. The secondary pinhole provides a larger capture tolerance for interferometrically performing fine focus. With the focus-aid enhanced mask, conventional methods such as the knife-edge test can be used to perform an initial (or rough) focus and the secondary (large) pinhole is used to perform interferometric fine focus. Once the system is well focused, high accuracy interferometry can be performed using the primary (small) pinhole.

  8. Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices

    DOE Patents [OSTI]

    Morse, Jeffrey D. (Martinez, CA); Contolini, Robert J. (Lake Oswego, OR)

    2001-01-01

    A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.

  9. Masked Areas in Shear Peak Statistics: A Forward Modeling Approach (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Masked Areas in Shear Peak Statistics: A Forward Modeling Approach Citation Details In-Document Search Title: Masked Areas in Shear Peak Statistics: A Forward Modeling Approach Authors: Bard, D. ; /KIPAC, Menlo Park ; Kratochvil, J.M. ; /KwaZulu Natal U. ; Dawson, W. ; /LLNL, Livermore Publication Date: 2016-02-18 OSTI Identifier: 1238567 Report Number(s): SLAC-PUB-16483 arXiv:1410.5446 DOE Contract Number: AC02-76SF00515 Resource Type: Journal Article Resource

  10. Cavity-enhanced single photon emission from site-controlled In(Ga)As quantum dots fabricated using nanoimprint lithography

    SciTech Connect (OSTI)

    Tommila, J.; Hakkarainen, T. V.; Schramm, A. Guina, M.; Belykh, V. V.; Sibeldin, N. N.; Heinonen, E.

    2014-05-26

    We report on the emission dynamics of single In(Ga)As quantum dots formed in etched GaAs pits and integrated into micropillar cavities. The site-controlled quantum dots were fabricated by molecular beam epitaxy on nanoimprint lithography patterned GaAs(001) surfaces. Triggered single photon emission confirmed by photon autocorrelation measurements is demonstrated. Time-resolved photoluminescence experiments clearly show an effect of the cavity on the spontaneous emission rate of the quantum dot.

  11. Computer-aided engineering system for design of sequence arrays and lithographic masks

    DOE Patents [OSTI]

    Hubbell, Earl A.; Lipshutz, Robert J.; Morris, Macdonald S.; Winkler, James L.

    1997-01-01

    An improved set of computer tools for forming arrays. According to one aspect of the invention, a computer system is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files to design and/or generate lithographic masks.

  12. Theoretical and numerical analyses of a slit-masked chicane for modulated bunch generation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Xiaofang; Broemmelsiek, Daniel R.; Shin, Young -Min; Fermi National Accelerator Lab.

    2015-10-28

    Density modulations on electron beams can improve machine performance of beam-driven accelerators and FELs with resonance beam-wave coupling. The beam modulation is studied with a masked chicane by the analytic model and simulations with the beam parameters of the Fermilab Accelerator Science and Technology (FAST) facility. With the chicane design parameters (bending angle of 18o, bending radius of 0.95 m and R56 ~ –0.19 m) and a nominal beam of 3 ps bunch length, the analytic model showed that a slit-mask with slit period 900 μ m and aperture width 300 μ m induces a modulation of bunch-to-bunch spacing ~more » 100 μ m to the bunch with 2.4% correlated energy spread. With the designed slit mask and a 3 ps bunch, particle-in-cell (PIC) simulations, including nonlinear energy distributions, space charge force, and coherent synchrotron radiation (CSR) effect, also result in beam modulation with bunch-to-bunch distance around 100 μ m and a corresponding modulation frequency of 3 THz. The beam modulation has been extensively examined with three different beam conditions, 2.25 ps (0.25 nC), 3.25 ps (1 nC), and 4.75 ps (3.2 nC), by tracking code Elegant. The simulation analysis indicates that the sliced beam by the slit-mask with 3 ~ 6% correlated energy spread has modulation lengths about 187 μ m (0.25 nC), 270 μ m (1 nC) and 325 μ m (3.2 nC). As a result, the theoretical and numerical data proved the capability of the designed masked chicane in producing modulated bunch train with micro-bunch length around 100 fs.« less

  13. Theoretical and numerical analyses of a slit-masked chicane for modulated bunch generation

    SciTech Connect (OSTI)

    Zhu, Xiaofang; Broemmelsiek, Daniel R.; Shin, Young -Min

    2015-10-28

    Density modulations on electron beams can improve machine performance of beam-driven accelerators and FELs with resonance beam-wave coupling. The beam modulation is studied with a masked chicane by the analytic model and simulations with the beam parameters of the Fermilab Accelerator Science and Technology (FAST) facility. With the chicane design parameters (bending angle of 18o, bending radius of 0.95 m and R56 ~ –0.19 m) and a nominal beam of 3 ps bunch length, the analytic model showed that a slit-mask with slit period 900 μ m and aperture width 300 μ m induces a modulation of bunch-to-bunch spacing ~ 100 μ m to the bunch with 2.4% correlated energy spread. With the designed slit mask and a 3 ps bunch, particle-in-cell (PIC) simulations, including nonlinear energy distributions, space charge force, and coherent synchrotron radiation (CSR) effect, also result in beam modulation with bunch-to-bunch distance around 100 μ m and a corresponding modulation frequency of 3 THz. The beam modulation has been extensively examined with three different beam conditions, 2.25 ps (0.25 nC), 3.25 ps (1 nC), and 4.75 ps (3.2 nC), by tracking code Elegant. The simulation analysis indicates that the sliced beam by the slit-mask with 3 ~ 6% correlated energy spread has modulation lengths about 187 μ m (0.25 nC), 270 μ m (1 nC) and 325 μ m (3.2 nC). As a result, the theoretical and numerical data proved the capability of the designed masked chicane in producing modulated bunch train with micro-bunch length around 100 fs.

  14. Lyalpha EMITTERS IN HIERARCHICAL GALAXY FORMATION. II. ULTRAVIOLET

    Office of Scientific and Technical Information (OSTI)

    CONTINUUM LUMINOSITY FUNCTION AND EQUIVALENT WIDTH DISTRIBUTION (Journal Article) | SciTech Connect Lyalpha EMITTERS IN HIERARCHICAL GALAXY FORMATION. II. ULTRAVIOLET CONTINUUM LUMINOSITY FUNCTION AND EQUIVALENT WIDTH DISTRIBUTION Citation Details In-Document Search Title: Lyalpha EMITTERS IN HIERARCHICAL GALAXY FORMATION. II. ULTRAVIOLET CONTINUUM LUMINOSITY FUNCTION AND EQUIVALENT WIDTH DISTRIBUTION We present theoretical predictions of the UV continuum luminosity function (UV LF) and

  15. A reflective optical transport system for ultraviolet Thomson scattering

    Office of Scientific and Technical Information (OSTI)

    from electron plasma waves on OMEGA (Journal Article) | SciTech Connect A reflective optical transport system for ultraviolet Thomson scattering from electron plasma waves on OMEGA Citation Details In-Document Search Title: A reflective optical transport system for ultraviolet Thomson scattering from electron plasma waves on OMEGA A reflective optical transport system has been designed for the OMEGA Thomson-scattering diagnostic. A Schwarzschild objective that uses two concentric spherical

  16. Ultraviolet Thomson scattering measurements of the electron feature with an

    Office of Scientific and Technical Information (OSTI)

    energetic 263 nm probe (Journal Article) | SciTech Connect Journal Article: Ultraviolet Thomson scattering measurements of the electron feature with an energetic 263 nm probe Citation Details In-Document Search Title: Ultraviolet Thomson scattering measurements of the electron feature with an energetic 263 nm probe Authors: Ross, J S ; Divol, L ; Sorce, C ; Froula, D H ; Glenzer, S H Publication Date: 2011-06-23 OSTI Identifier: 1091881 Report Number(s): LLNL-JRNL-489959 DOE Contract Number:

  17. Lamp for generating high power ultraviolet radiation

    DOE Patents [OSTI]

    Morgan, Gary L. (Elkridge, MD); Potter, James M. (Los Alamos, NM)

    2001-01-01

    The apparatus is a gas filled ultraviolet generating lamp for use as a liquid purifier. The lamp is powred by high voltage AC, but has no metallic electrodes within or in contact with the gas enclosure which is constructed as two concentric quartz cylinders sealed together at their ends with the gas fill between the cylinders. Cooling liquid is pumped through the volume inside the inner quartz cylinder where an electrically conductive pipe spaced from the inner cylinder is used to supply the cooling liquid and act as the high voltage electrode. The gas enclosure is enclosed within but spaced from a metal housing which is connected to operate as the ground electrode of the circuit and through which the treated fluid flows. Thus, the electrical circuit is from the central pipe, and through the cooling liquid, the gas enclosure, the treated liquid on the outside of the outer quartz cylinder, and to the housing. The high voltage electrode is electrically isolated from the source of cooling liquid by a length of insulated hose which also supplies the cooling liquid.

  18. Reflective optical imaging system

    DOE Patents [OSTI]

    Shafer, David R. (Fairfield, CT)

    2000-01-01

    An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four reflective elements for projecting a mask image onto a substrate. The four optical elements are characterized in order from object to image as convex, concave, convex and concave mirrors. The optical system is particularly suited for step and scan lithography methods. The invention increases the slit dimensions associated with ringfield scanning optics, improves wafer throughput and allows higher semiconductor device density.

  19. Reflective optical imaging method and circuit

    DOE Patents [OSTI]

    Shafer, David R. (Fairfield, CT)

    2001-01-01

    An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four reflective elements for projecting a mask image onto a substrate. The four optical elements are characterized in order from object to image as convex, concave, convex and concave mirrors. The optical system is particularly suited for step and scan lithography methods. The invention increases the slit dimensions associated with ringfield scanning optics, improves wafer throughput and allows higher semiconductor device density.

  20. System and methods for determining masking signals for applying empirical mode decomposition (EMD) and for demodulating intrinsic mode functions obtained from application of EMD

    DOE Patents [OSTI]

    Senroy, Nilanjan; Suryanarayanan, Siddharth

    2011-03-15

    A computer-implemented method of signal processing is provided. The method includes generating one or more masking signals based upon a computed Fourier transform of a received signal. The method further includes determining one or more intrinsic mode functions (IMFs) of the received signal by performing a masking-signal-based empirical mode decomposition (EMD) using the at least one masking signal.

  1. Assessing out-of-band flare effects at the wafer level for EUV lithography

    SciTech Connect (OSTI)

    George, Simi; Naulleau, Patrick; Kemp, Charles; Denham, Paul; Rekawa, Senajith

    2010-01-25

    To accurately estimate the flare contribution from the out-of-band (OOB), the integration of a DUV source into the SEMATECH Berkeley 0.3-NA Micro-field Exposure tool is proposed, enabling precisely controlled exposures along with the EUV patterning of resists in vacuum. First measurements evaluating the impact of bandwidth selected exposures with a table-top set-up and subsequent EUV patterning show significant impact on line-edge roughness and process performance. We outline a simulation-based method for computing the effective flare from resist sensitive wavelengths as a function of mask pattern types and sizes. This simulation method is benchmarked against measured OOB flare measurements and the results obtained are in agreement.

  2. HST-COS observations of AGNs. II. Extended survey of ultraviolet composite spectra from 159 active galactic nuclei

    SciTech Connect (OSTI)

    Stevans, Matthew L. [Present address: Astronomy Department, University of Texas, Austin, TX 78712, USA. (United States); Shull, J. Michael [Also at Institute of Astronomy, Cambridge University, Cambridge CB3 OHA, UK. (United Kingdom); Danforth, Charles W.; Tilton, Evan M., E-mail: stevans@astro.as.utexas.edu, E-mail: michael.shull@colorado.edu, E-mail: charles.danforth@colorado.edu, E-mail: evan.tilton@colorado.edu [CASA, Department of Astrophysical and Planetary Sciences, University of Colorado, Boulder, CO 80309 (United States)

    2014-10-10

    The ionizing fluxes from quasars and other active galactic nuclei (AGNs) are critical for interpreting their emission-line spectra and for photoionizing and heating the intergalactic medium. Using far-ultraviolet (FUV) spectra from the Cosmic Origins Spectrograph (COS) on the Hubble Space Telescope (HST), we directly measure the rest-frame ionizing continua and emission lines for 159 AGNs at redshifts 0.001 < z {sub AGN} < 1.476 and construct a composite spectrum from 475 to 1875 . We identify the underlying AGN continuum and strong extreme ultraviolet (EUV) emission lines from ions of oxygen, neon, and nitrogen after masking out absorption lines from the H I Ly? forest, 7 Lyman-limit systems (N{sub H} {sub I}?10{sup 17.2} cm{sup 2}) and 214 partial Lyman-limit systems (14.5

  3. Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns

    DOE Patents [OSTI]

    Hau-Riege, Stefan Peter

    2007-05-01

    The invention applies techniques for image reconstruction from X-ray diffraction patterns on the three-dimensional imaging of defects in EUVL multilayer films. The reconstructed image gives information about the out-of-plane position and the diffraction strength of the defect. The positional information can be used to select the correct defect repair technique. This invention enables the fabrication of defect-free (since repaired) X-ray Mo--Si multilayer mirrors. Repairing Mo--Si multilayer-film defects on mask blanks is a key for the commercial success of EUVL. It is known that particles are added to the Mo--Si multilayer film during the fabrication process. There is a large effort to reduce this contamination, but results are not sufficient, and defects continue to be a major mask yield limiter. All suggested repair strategies need to know the out-of-plane position of the defects in the multilayer.

  4. Patterned Exfoliation of GaAs Based on Masked Helium Implantation and Subsequent Rapid Thermal Annealing

    SciTech Connect (OSTI)

    Woo, H. J.; Choi, H. W.; Kim, G. D.; Hong, W.; Kim, J. K.

    2009-03-10

    A method of patterning single crystal GaAs based on ion implantation induced selective area exfoliation is suggested. Samples were implanted with 200-500 keV helium ions to a fluence range of 2-4x10{sup 16} He{sup +}/cm{sup 2} at room temperature through masks of Ni mesh (40 {mu}m opening) or stainless steel wire (50 {mu}m in diameter), and subsequent rapid thermal annealing at 350-500{open_square} resulted in expulsion of ion beam exposed material. The influences of ion energy, ion fluence, implantation temperature, subsequent annealing conditions (temperature and ramp rate), and mask pattern and its orientation with GaAs lattice on the patterned exfoliation were examined.

  5. Computer-aided engineering system for design of sequence arrays and lithographic masks

    DOE Patents [OSTI]

    Hubbell, Earl A.; Morris, MacDonald S.; Winkler, James L.

    1996-01-01

    An improved set of computer tools for forming arrays. According to one aspect of the invention, a computer system (100) is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files (104) to design and/or generate lithographic masks (110).

  6. Computer-aided engineering system for design of sequence arrays and lithographic masks

    DOE Patents [OSTI]

    Hubbell, E.A.; Morris, M.S.; Winkler, J.L.

    1996-11-05

    An improved set of computer tools for forming arrays is disclosed. According to one aspect of the invention, a computer system is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files to design and/or generate lithographic masks. 14 figs.

  7. Computer-aided engineering system for design of sequence arrays and lithographic masks

    DOE Patents [OSTI]

    Hubbell, E.A.; Morris, M.S.; Winkler, J.L.

    1999-01-05

    An improved set of computer tools for forming arrays is disclosed. According to one aspect of the invention, a computer system is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files to design and/or generate lithographic masks. 14 figs.

  8. Computer-aided engineering system for design of sequence arrays and lithographic masks

    DOE Patents [OSTI]

    Hubbell, Earl A.; Morris, MacDonald S.; Winkler, James L.

    1999-01-05

    An improved set of computer tools for forming arrays. According to one aspect of the invention, a computer system (100) is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files (104) to design and/or generate lithographic masks (110).

  9. Computer-aided engineering system for design of sequence arrays and lithographic masks

    DOE Patents [OSTI]

    Hubbell, E.A.; Lipshutz, R.J.; Morris, M.S.; Winkler, J.L.

    1997-01-14

    An improved set of computer tools for forming arrays is disclosed. According to one aspect of the invention, a computer system is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files to design and/or generate lithographic masks. 14 figs.

  10. Planck CMB anomalies: astrophysical and cosmological secondary effects and the curse of masking

    SciTech Connect (OSTI)

    Rassat, A.; Starck, J.-L.; Paykari, P.; Sureau, F.; Bobin, J. E-mail: jstarck@cea.fr E-mail: florent.sureau@cea.fr

    2014-08-01

    Large-scale anomalies have been reported in CMB data with both WMAP and Planck data. These could be due to foreground residuals and or systematic effects, though their confirmation with Planck data suggests they are not due to a problem in the WMAP or Planck pipelines. If these anomalies are in fact primordial, then understanding their origin is fundamental to either validate the standard model of cosmology or to explore new physics. We investigate three other possible issues: 1) the trade-off between minimising systematics due to foreground contamination (with a conservative mask) and minimising systematics due to masking, 2) astrophysical secondary effects (the kinetic Doppler quadrupole and kinetic Sunyaev-Zel'dovich effect), and 3) secondary cosmological signals (the integrated Sachs-Wolfe effect). We address the masking issue by considering new procedures that use both WMAP and Planck to produce higher quality full-sky maps using the sparsity methodology (LGMCA maps). We show the impact of masking is dominant over that of residual foregrounds, and the LGMCA full-sky maps can be used without further processing to study anomalies. We consider four official Planck PR1 and two LGMCA CMB maps. Analysis of the observed CMB maps shows that only the low quadrupole and quadrupole-octopole alignment seem significant, but that the planar octopole, Axis of Evil, mirror parity and cold spot are not significant in nearly all maps considered. After subtraction of astrophysical and cosmological secondary effects, only the low quadrupole may still be considered anomalous, meaning the significance of only one anomaly is affected by secondary effect subtraction out of six anomalies considered. In the spirit of reproducible research all reconstructed maps and codes will be made available for download here http://www.cosmostat.org/anomaliesCMB.html.

  11. Development of extreme ultraviolet and soft x-ray multilayer optics for scientific studies with femtosecond/attosecond sources

    SciTech Connect (OSTI)

    Aquila, Andrew Lee

    2009-05-21

    The development of multilayer optics for extreme ultraviolet (EUV) radiation has led to advancements in many areas of science and technology, including materials studies, EUV lithography, water window microscopy, plasma imaging, and orbiting solar physics imaging. Recent developments in femtosecond and attosecond EUV pulse generation from sources such as high harmonic generation lasers, combined with the elemental and chemical specificity provided by EUV radiation, are opening new opportunities to study fundamental dynamic processes in materials. Critical to these efforts is the design and fabrication of multilayer optics to transport, focus, shape and image these ultra-fast pulses This thesis describes the design, fabrication, characterization, and application of multilayer optics for EUV femtosecond and attosecond scientific studies. Multilayer mirrors for bandwidth control, pulse shaping and compression, tri-material multilayers, and multilayers for polarization control are described. Characterization of multilayer optics, including measurement of material optical constants, reflectivity of multilayer mirrors, and metrology of reflected phases of the multilayer, which is critical to maintaining pulse size and shape, were performed. Two applications of these multilayer mirrors are detailed in the thesis. In the first application, broad bandwidth multilayers were used to characterize and measure sub-100 attosecond pulses from a high harmonic generation source and was performed in collaboration with the Max-Planck institute for Quantum Optics and Ludwig- Maximilians University in Garching, Germany, with Professors Krausz and Kleineberg. In the second application, multilayer mirrors with polarization control are useful to study femtosecond spin dynamics in an ongoing collaboration with the T-REX group of Professor Parmigiani at Elettra in Trieste, Italy. As new ultrafast x-ray sources become available, for example free electron lasers, the multilayer designs described in this thesis can be extended to higher photon energies, and such designs can be used with those sources to enable new scientific studies, such as molecular bonding, phonon, and spin dynamics.

  12. Defect Mask Encoder (DME) for a Content-Based Image Retrieval System

    Energy Science and Technology Software Center (OSTI)

    2002-10-08

    With the proliferation and accessibility of web-based Internet sites for the posting and viewing of various forms of data and information, digital watermark technology has been created to facilitate the copyright protection of digital imagery even under conditions where the original image may have been modified through image transforms such as compression, rotation, and cropping. This software represents a new application of digital watermarking for the purpose of encoding, storing, and decoding image region segmentationsmore »sometimes referred to as “drawings”, “masks”, or “defect masks”, to facilitate the description and management of large numbers of electronic images in digital libraries or databases. The technology provides a transparent, secure, and space-efficient method for maintaining these masks within digital libraries for purposes such as manufacturing, biomedical, satellite/land use, and other image-intensive applications.« less

  13. Can we stop the spread of influenza in schools with face masks?

    SciTech Connect (OSTI)

    Del Valle, Sara Y; Tellier, Raymond; Settles, Gary; Tang, Julian

    2009-01-01

    In the absence of a strain-specific vaccine and the potential resistance to antiviral medication, nonpharmaceutical interventions can be used to reduce the spread of an infectious disease such as influenza. The most common non-pharmaceutical interventions include school closures, travel restrictions, social distancing, enforced or volunteer home isolation and quarantine, improved hand hygiene, and the appropriate wearing of face masks. However, for some of these interventions, there are some unavoidable economic costs to both employees and employers, as well as possible additional detriment to society as a whole. For example, it has been shown that school-age children are most likely to be infected and act as sources of infection for others, due to their greater societal interaction and increased susceptibility. Therefore, preventing or at least reducing infections in children is a logical first-line of defense. For this reason, school closures have been widely investigated and recommended as part of pandemic influenza preparedness, and some studies support this conclusion. Yet, school closures would result in lost work days if at least one parent must be absent from work to care for children who would otherwise be at school. In addition, the delay in-academic progress may be detrimental due to mass school absenteeism. In particular, the pandemic influenza guidance by the U.S. Department of Health and Human Services recommends school closures for less than four weeks for Category 2 and 3 pandemics (i.e., similar to the milder 1957 and 1968 pandemics) and one to three months for Category 4 and 5 pandemics (i .e., similar to the 1918 pandemic ). Yet, given the above, it is clear that closing schools for up to three months is unlikely to be a practical mitigation strategy for many families and society. Thus modelers and policy makers need to weigh all factors before recommending such drastic measures, particularly if the agent under consideration typically has low mortality and causes a mild disease. Therefore, we contend that face masks are an effective, practical, non-pharmaceutical intervention that would reduce the spread of disease among school-children, while keeping schools open. Influenza spreads through person-to-person contact, via transmission by large droplets or aerosols (droplet nuclei) produced by breathing, talking, coughing or sneezing, as well as by direct (though most people touch very few others in their daily lives) or indirect (i.e., via fomites) contact. Face masks act as a physical barrier to reduce the amount of potentially infectious inhaled and exhaled particles, although they would not reliably protect the wearer against aerosols; a recent study also demonstrated that they can redirect and decelerate exhaled airflows (when worn by an infected individual) to prevent them from entering the breathing zones of others. Thus, if a whole classroom were to don face masks, disease transmission would be expected to be greatly diminished. Another recent study on face masks and hand hygiene show a 10-50% transmission reduction for influenza-like illnesses. Furthermore, face masks can act as an effective physical reminder and barrier to transmission by preventing the wearer from touching any potentially infectious secretions from their mucous membranes (i.e., from the nose and mouth), which is another mechanism for direct and indirect contact transmission for influenza. A recent systematic review has suggested that wearing masks can be highly effective in limiting the transmission of respiratory infections, such as influenza. Yet, admittedly, the effectiveness of this intervention strategy is highly dependent on compliance (i.e., the willingness to wear the mask in all appropriate situations), which in tum depends on comfort, convenience, fitness, and hygiene. Importantly, masks themselves must not become a source of infection (or reinfection); as such they should be replaced or sanitized daily (where possible) to maximize effectiveness. One solution could be for masks to be touted as fashion accessories, which may be particularly effective in influencing trend-conscious children. With support from the fashion industry and a child-targeted public health campaign, it may be possible to encourage such a trend and make the mask an acceptable fashion item, as well as an important means of infectious disease control.

  14. Ringfield lithographic camera

    DOE Patents [OSTI]

    Sweatt, W.C.

    1998-09-08

    A projection lithography camera is presented with a wide ringfield optimized so as to make efficient use of extreme ultraviolet radiation from a large area radiation source (e.g., D{sub source} {approx_equal} 0.5 mm). The camera comprises four aspheric mirrors optically arranged on a common axis of symmetry. The camera includes an aperture stop that is accessible through a plurality of partial aperture stops to synthesize the theoretical aperture stop. Radiation from a mask is focused to form a reduced image on a wafer, relative to the mask, by reflection from the four aspheric mirrors. 11 figs.

  15. Europium (Z=63) n=3-3 lines in the extreme ultraviolet: Na- through...

    Office of Scientific and Technical Information (OSTI)

    ultraviolet: Na- through Si-like ions Citation Details In-Document Search Title: Europium (Z63) n3-3 lines in the extreme ultraviolet: Na- through Si-like ions Authors: ...

  16. Soft X-Ray and Vacuum Ultraviolet Based Spectroscopy of the Actinides...

    Office of Scientific and Technical Information (OSTI)

    Conference: Soft X-Ray and Vacuum Ultraviolet Based Spectroscopy of the Actinides Citation Details In-Document Search Title: Soft X-Ray and Vacuum Ultraviolet Based Spectroscopy of...

  17. On-board Measurement of NO and NO2 using Non-dispersive Ultraviolet...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    board Measurement of NO and NO2 using Non-dispersive Ultraviolet (NDUV) Spectroscopy On-board Measurement of NO and NO2 using Non-dispersive Ultraviolet (NDUV) Spectroscopy...

  18. NEAR-ULTRAVIOLET PROPERTIES OF A LARGE SAMPLE OF TYPE Ia SUPERNOVAE...

    Office of Scientific and Technical Information (OSTI)

    AND ASTRONOMY; DUSTS; EMISSION; GALACTIC EVOLUTION; GALAXIES; NASA; PHOTOMETRY; RED SHIFT; STAR EVOLUTION; SUPERNOVAE; TELESCOPES; TIME DELAY; ULTRAVIOLET RADIATION BINARY...

  19. Key issues of ultraviolet radiation of OH at high altitudes

    SciTech Connect (OSTI)

    Zhang, Yuhuai; Wan, Tian; Jiang, Jianzheng; Fan, Jing

    2014-12-09

    Ultraviolet (UV) emissions radiated by hydroxyl (OH) is one of the fundamental elements in the prediction of radiation signature of high-altitude and high-speed vehicle. In this work, the OH A{sup 2}?{sup +}?X{sup 2}? ultraviolet emission band behind the bow shock is computed under the experimental condition of the second bow-shock ultraviolet flight (BSUV-2). Four related key issues are discussed, namely, the source of hydrogen element in the high-altitude atmosphere, the formation mechanism of OH species, efficient computational algorithm of trace species in rarefied flows, and accurate calculation of OH emission spectra. Firstly, by analyzing the typical atmospheric model, the vertical distributions of the number densities of different species containing hydrogen element are given. According to the different dominating species containing hydrogen element, the atmosphere is divided into three zones, and the formation mechanism of OH species is analyzed in the different zones. The direct simulation Monte Carlo (DSMC) method and the Navier-Stokes equations are employed to compute the number densities of the different OH electronically and vibrationally excited states. Different to the previous work, the trace species separation (TSS) algorithm is applied twice in order to accurately calculate the densities of OH species and its excited states. Using a non-equilibrium radiation model, the OH ultraviolet emission spectra and intensity at different altitudes are computed, and good agreement is obtained with the flight measured data.

  20. Reflective optical imaging system with balanced distortion

    SciTech Connect (OSTI)

    Chapman, Henry N.; Hudyma, Russell M.; Shafer, David R.; Sweeney, Donald W.

    1999-01-01

    An optical system compatible with short wavelength (extreme ultraviolet) An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four reflective elements for projecting a mask image onto a substrate. The four optical elements comprise, in order from object to image, convex, concave, convex and concave mirrors. The optical system is particularly suited for step and scan lithography methods. The invention enables the use of larger slit dimensions associated with ring field scanning optics, improves wafer throughput and allows higher semiconductor device density. The inventive optical system is characterized by reduced dynamic distortion because the static distortion is balanced across the slit width.

  1. Fabrication of triangular nanobeam waveguide networks in bulk diamond using single-crystal silicon hard masks

    SciTech Connect (OSTI)

    Bayn, I.; Mouradian, S.; Li, L.; Goldstein, J. A.; Schrder, T.; Zheng, J.; Chen, E. H.; Gaathon, O.; Englund, Dirk; Lu, M.; Stein, A.; Ruggiero, C. A.; Salzman, J.; Kalish, R.

    2014-11-24

    A scalable approach for integrated photonic networks in single-crystal diamond using triangular etching of bulk samples is presented. We describe designs of high quality factor (Q?=?2.51??10{sup 6}) photonic crystal cavities with low mode volume (V{sub m}?=?1.062??(?/n){sup 3}), which are connected via waveguides supported by suspension structures with predicted transmission loss of only 0.05?dB. We demonstrate the fabrication of these structures using transferred single-crystal silicon hard masks and angular dry etching, yielding photonic crystal cavities in the visible spectrum with measured quality factors in excess of Q?=?3??10{sup 3}.

  2. Patterned graphene functionalization via mask-free scanning of micro-plasma jet under ambient condition

    SciTech Connect (OSTI)

    Ye, Dong; Yu, Yao Liu, Lin; Wu, Shu-Qun; Lu, Xin-Pei; Wu, Yue

    2014-03-10

    In this work, a mask-free method is introduced for patterned nitrogen doping of graphene using a micro-plasma jet under ambient condition. Raman and X-ray photoelectron spectroscopy spectra indicate that nitrogen atoms are incorporated into the graphene lattice with the two-dimensional spatial distribution precisely controlled in the range of mm down to 10??m. Since the chemistry of the micro-plasma jet can be controlled by the choice of the gas mixture, this direct writing process with micro-plasma jet can be a versatile approach for patterned functionalization of graphene with high spatial resolution. This could have promising applications in graphene-based electronics.

  3. Development of computer program ENMASK for prediction of residual environmental masking-noise spectra, from any three independent environmental parameters

    SciTech Connect (OSTI)

    Chang, Y.-S.; Liebich, R. E.; Chun, K. C.

    2000-03-31

    Residual environmental sound can mask intrusive4 (unwanted) sound. It is a factor that can affect noise impacts and must be considered both in noise-impact studies and in noise-mitigation designs. Models for quantitative prediction of sensation level (audibility) and psychological effects of intrusive noise require an input with 1/3 octave-band spectral resolution of environmental masking noise. However, the majority of published residual environmental masking-noise data are given with either octave-band frequency resolution or only single A-weighted decibel values. A model has been developed that enables estimation of 1/3 octave-band residual environmental masking-noise spectra and relates certain environmental parameters to A-weighted sound level. This model provides a correlation among three environmental conditions: measured residual A-weighted sound-pressure level, proximity to a major roadway, and population density. Cited field-study data were used to compute the most probable 1/3 octave-band sound-pressure spectrum corresponding to any selected one of these three inputs. In turn, such spectra can be used as an input to models for prediction of noise impacts. This paper discusses specific algorithms included in the newly developed computer program ENMASK. In addition, the relative audibility of the environmental masking-noise spectra at different A-weighted sound levels is discussed, which is determined by using the methodology of program ENAUDIBL.

  4. Suboxide/subnitride formation on Ta masks during magnetic material etching by reactive plasmas

    SciTech Connect (OSTI)

    Li, Hu; Muraki, Yu; Karahashi, Kazuhiro; Hamaguchi, Satoshi

    2015-07-15

    Etching characteristics of tantalum (Ta) masks used in magnetoresistive random-access memory etching processes by carbon monoxide and ammonium (CO/NH{sub 3}) or methanol (CH{sub 3}OH) plasmas have been examined by mass-selected ion beam experiments with in-situ surface analyses. It has been suggested in earlier studies that etching of magnetic materials, i.e., Fe, Ni, Co, and their alloys, by such plasmas is mostly due to physical sputtering and etch selectivity of the process arises from etch resistance (i.e., low-sputtering yield) of the hard mask materials such as Ta. In this study, it is shown that, during Ta etching by energetic CO{sup +} or N{sup +} ions, suboxides or subnitrides are formed on the Ta surface, which reduces the apparent sputtering yield of Ta. It is also shown that the sputtering yield of Ta by energetic CO{sup +} or N{sup +} ions has a strong dependence on the angle of ion incidence, which suggests a correlation between the sputtering yield and the oxidation states of Ta in the suboxide or subnitride; the higher the oxidation state of Ta, the lower is the sputtering yield. These data account for the observed etch selectivity by CO/NH{sub 3} and CH{sub 3}OH plasmas.

  5. The pilus usher controls protein interactions via domain masking and is functional as an oligomer

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Werneburg, Glenn T.; Li, Huilin; Henderson, Nadine S.; Portnoy, Erica B.; Sarowar, Samema; Hultgren, Scott J.; Thanassi, David G.

    2015-06-08

    The chaperone/usher (CU) pathway is responsible for biogenesis of organelles termed pili or fimbriae in Gram-negative bacteria. Type 1 pili expressed by uropathogenic Escherichia coli are prototypical structures assembled by the CU pathway. Assembly and secretion of pili by the CU pathway requires a dedicated periplasmic chaperone and a multidomain outer membrane protein termed the usher (FimD). We show that the FimD C-terminal domains provide the high-affinity substrate binding site, but that these domains are masked in the resting usher. Domain masking requires the FimD plug domain, which served as a central switch controlling usher activation. In addition, we demonstratemore » that usher molecules can act in trans for pilus biogenesis, providing conclusive evidence for a functional usher oligomer. These results reveal mechanisms by which molecular machines such as the usher regulate and harness protein-protein interactions, and suggest that ushers may interact in a cooperative manner during pilus assembly in bacteria.« less

  6. Phase-Field Simulations of GaN Growth by Selective Area Epitaxy on Complex Mask Geometries

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Aagesen, Larry K.; Coltrin, Michael Elliott; Han, Jung; Thornton, Katsuyo

    2015-05-15

    Three-dimensional phase-field simulations of GaNgrowth by selective area epitaxy were performed. Furthermore, this model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. We found that the model provides a route to optimize masks and processingmore » conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.« less

  7. Phase-Field Simulations of GaN Growth by Selective Area Epitaxy on Complex Mask Geometries

    SciTech Connect (OSTI)

    Aagesen, Larry K.; Coltrin, Michael Elliott; Han, Jung; Thornton, Katsuyo

    2015-05-15

    Three-dimensional phase-field simulations of GaNgrowth by selective area epitaxy were performed. Furthermore, this model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. We found that the model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.

  8. Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries

    SciTech Connect (OSTI)

    Aagesen, Larry K.; Thornton, Katsuyo; Coltrin, Michael E.; Han, Jung

    2015-05-21

    Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. The model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. The model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.

  9. Superhydrophobic anti-ultraviolet films by doctor blade coating

    SciTech Connect (OSTI)

    Cai, Chang-Yun; Yang, Hongta; Lin, Kun-Yi Andrew

    2014-11-17

    This article reports a scalable technology for fabricating polymer films with excellent water-repelling and anti-ultraviolet properties. A roll-to-roll compatible doctor blade coating technology is utilized to prepare silica colloidal crystal-polymer composites. The silica microspheres can then be selectively removed to create flexible self-standing macroporous polymer films with crystalline arrays of pores. The void sizes are controlled by tuning the duration of a reactive ion etching process prior to the removal of the templating silica microspheres. After surface modification, superhydrophobic surface can be achieved. This study further demonstrates that the as-prepared transparent porous films with 200?nm of pores exhibit diffraction of ultraviolet lights originated from the Bragg's diffractive of light from the three-dimensional highly ordered air cavities.

  10. High extraction efficiency ultraviolet light-emitting diode

    DOE Patents [OSTI]

    Wierer, Jonathan; Montano, Ines; Allerman, Andrew A.

    2015-11-24

    Ultraviolet light-emitting diodes with tailored AlGaN quantum wells can achieve high extraction efficiency. For efficient bottom light extraction, parallel polarized light is preferred, because it propagates predominately perpendicular to the QW plane and into the typical and more efficient light escape cones. This is favored over perpendicular polarized light that propagates along the QW plane which requires multiple, lossy bounces before extraction. The thickness and carrier density of AlGaN QW layers have a strong influence on the valence subband structure, and the resulting optical polarization and light extraction of ultraviolet light-emitting diodes. At Al>0.3, thinner QW layers (<2.5 nm are preferred) result in light preferentially polarized parallel to the QW plane. Also, active regions consisting of six or more QWs, to reduce carrier density, and with thin barriers, to efficiently inject carriers in all the QWs, are preferred.

  11. Inorganic volumetric light source excited by ultraviolet light

    DOE Patents [OSTI]

    Reed, Scott (Albuquerue, NM); Walko, Robert J. (Albuquerue, NM); Ashley, Carol S. (Albuquerue, NM); Brinker, C. Jeffrey (Albuquerue, NM)

    1994-01-01

    The invention relates to a composition for the volumetric generation of radiation. The composition comprises a porous substrate loaded with a component capable of emitting radiation upon interaction with an exciting radiation. Preferably, the composition is an aerogel substrate loaded with a component, e.g., a phosphor, capable of interacting with exciting radiation of a first energy, e.g., ultraviolet light, to produce radiation of a second energy, e.g., visible light.

  12. Magnetic fluorescent lamp having reduced ultraviolet self-absorption

    DOE Patents [OSTI]

    Berman, Samuel M. (San Francisco, CA); Richardson, Robert W. (Pelham, NY)

    1985-01-01

    The radiant emission of a mercury-argon discharge in a fluorescent lamp assembly (10) is enhanced by providing means (30) for establishing a magnetic field with lines of force along the path of electron flow through the bulb (12) of the lamp assembly, to provide Zeeman splitting of the ultraviolet spectral line. Optimum results are obtained when the magnetic field strength causes a Zeeman splitting of approximately 1.7 times the thermal line width.

  13. Inorganic volumetric light source excited by ultraviolet light

    DOE Patents [OSTI]

    Reed, S.; Walko, R.J.; Ashley, C.S.; Brinker, C.J.

    1994-04-26

    The invention relates to a composition for the volumetric generation of radiation. The composition comprises a porous substrate loaded with a component capable of emitting radiation upon interaction with an exciting radiation. Preferably, the composition is an aerogel substrate loaded with a component, e.g., a phosphor, capable of interacting with exciting radiation of a first energy, e.g., ultraviolet light, to produce radiation of a second energy, e.g., visible light. 4 figures.

  14. Amplitudes and Ultraviolet Behavior of N = 8 Supergravity

    SciTech Connect (OSTI)

    Bern, Zvi; Carrasco, John Joseph; Dixon, Lance J.; Johansson, Henrik; Roiban, Radu; /Penn State U.

    2011-05-20

    In this contribution we describe computational tools that permit the evaluation of multi-loop scattering amplitudes in N = 8 supergravity, in terms of amplitudes in N = 4 super-Yang-Mills theory. We also discuss the remarkable ultraviolet behavior of N = 8 supergravity, which follows from these amplitudes, and is as good as that of N = 4 super-Yang-Mills theory through at least four loops.

  15. Durable Corrosion and Ultraviolet-Resistant Silver Mirror

    DOE Patents [OSTI]

    Jorgensen, G. J.; Gee, R.

    2006-01-24

    A corrosion and ultra violet-resistant silver mirror for use in solar reflectors; the silver layer having a film-forming protective polymer bonded thereto, and a protective shield overlay comprising a transparent multipolymer film that incorporates a UV absorber. The corrosion and ultraviolet resistant silver mirror retains spectral hemispherical reflectance and high optical clarity throughout the UV and visible spectrum when used in solar reflectors.

  16. THE ULTRAVIOLET BRIGHTEST TYPE Ia SUPERNOVA 2011de

    SciTech Connect (OSTI)

    Brown, Peter J., E-mail: pbrown@physics.tamu.edu [George P. and Cynthia Woods Mitchell Institute for Fundamental Physics and Astronomy, Texas A and M University, Department of Physics and Astronomy, 4242 TAMU, College Station, TX 77843 (United States)

    2014-11-20

    We present and discuss the ultraviolet (UV)/optical photometric light curves and absolute magnitudes of the TypeIa supernova (SN Ia) 2011de from the Swift Ultraviolet/Optical Telescope. We find it to be the UV brightest SN Ia yet observedmore than a factor of 10 brighter than normal SNe Ia in the mid-ultraviolet. We find that the UV/optical brightness and broad light curve evolution can be modeled with additional flux from the shock of the ejecta hitting a relatively large red giant companion separated by 6 10{sup 13} cm. However, the post-maximum behavior of other UV-bright SNe Ia can also be modeled in a similar manner, including objects with UV spectroscopy or pre-maximum photometry which is inconsistent with this model. This suggests that similar UV luminosities can be intrinsic or caused by other forms of shock interaction. The high velocities reported for SN 2011de make it distinct from the UV-bright ''super-Chandrasekhar'' SNe Ia and the NUV-blue group of normal SNe Ia. SN 2011de is an extreme example of the UV variations in SNe Ia.

  17. A NEW ALGORITHM FOR RADIOISOTOPE IDENTIFICATION OF SHIELDED AND MASKED SNM/RDD MATERIALS

    SciTech Connect (OSTI)

    Jeffcoat, R.

    2012-06-05

    Detection and identification of shielded and masked nuclear materials is crucial to national security, but vast borders and high volumes of traffic impose stringent requirements for practical detection systems. Such tools must be be mobile, and hence low power, provide a low false alarm rate, and be sufficiently robust to be operable by non-technical personnel. Currently fielded systems have not achieved all of these requirements simultaneously. Transport modeling such as that done in GADRAS is able to predict observed spectra to a high degree of fidelity; our research is focusing on a radionuclide identification algorithm that inverts this modeling within the constraints imposed by a handheld device. Key components of this work include incorporation of uncertainty as a function of both the background radiation estimate and the hypothesized sources, dimensionality reduction, and nonnegative matrix factorization. We have partially evaluated performance of our algorithm on a third-party data collection made with two different sodium iodide detection devices. Initial results indicate, with caveats, that our algorithm performs as good as or better than the on-board identification algorithms. The system developed was based on a probabilistic approach with an improved approach to variance modeling relative to past work. This system was chosen based on technical innovation and system performance over algorithms developed at two competing research institutions. One key outcome of this probabilistic approach was the development of an intuitive measure of confidence which was indeed useful enough that a classification algorithm was developed based around alarming on high confidence targets. This paper will present and discuss results of this novel approach to accurately identifying shielded or masked radioisotopes with radiation detection systems.

  18. Laser Makes New Shade of Ultraviolet (COSMIC Log on MSNBC.com) | Jefferson

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Lab cosmiclog.nbcnews.com/_news/2010/12/28/5725603-laser-makes-new-shade-of-ultraviolet Submitted: Wednesday, December 29

  19. THE ABSOLUTE MAGNITUDES OF TYPE Ia SUPERNOVAE IN THE ULTRAVIOLET (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect THE ABSOLUTE MAGNITUDES OF TYPE Ia SUPERNOVAE IN THE ULTRAVIOLET Citation Details In-Document Search Title: THE ABSOLUTE MAGNITUDES OF TYPE Ia SUPERNOVAE IN THE ULTRAVIOLET We examine the absolute magnitudes and light-curve shapes of 14 nearby (redshift z = 0.004-0.027) Type Ia supernovae (SNe Ia) observed in the ultraviolet (UV) with the Swift Ultraviolet/Optical Telescope. Colors and absolute magnitudes are calculated using both a standard Milky Way extinction

  20. Broadband extreme ultraviolet probing of transient gratings in vanadium dioxide

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sistrunk, Emily; Lawrence Livermore National Lab.; Grilj, Jakob; Ecole Polytechnique Federal de Lausanne; Jeong, Jaewoo; Samant, Mahesh G.; Gray, Alexander X.; Temple Univ. Philadelphia, PA; Drr, Hermann A.; Parkin, Stuart S. P.; et al

    2015-02-11

    Nonlinear spectroscopy in the extreme ultraviolet (EUV) and soft x-ray spectral range offers the opportunity for element selective probing of ultrafast dynamics using core-valence transitions (Mukamel et al., Acc. Chem. Res. 42, 553 (2009)). We demonstrate a step on this path showing core-valence sensitivity in transient grating spectroscopy with EUV probing. We study the optically induced insulator-to-metal transition (IMT) of a VO? film with EUV diffraction from the optically excited sample. The VO? exhibits a change in the 3p-3d resonance of V accompanied by an acoustic response. Due to the broadband probing we are able to separate the two features.

  1. Large area, surface discharge pumped, vacuum ultraviolet light source

    DOE Patents [OSTI]

    Sze, Robert C. (Santa Fe, NM); Quigley, Gerard P. (Los Alamos, NM)

    1996-01-01

    Large area, surface discharge pumped, vacuum ultraviolet (VUV) light source. A contamination-free VUV light source having a 225 cm.sup.2 emission area in the 240-340 nm region of the electromagnetic spectrum with an average output power in this band of about 2 J/cm.sup.2 at a wall-plug efficiency of approximately 5% is described. Only ceramics and metal parts are employed in this surface discharge source. Because of the contamination-free, high photon energy and flux, and short pulse characteristics of the source, it is suitable for semiconductor and flat panel display material processing.

  2. Large area, surface discharge pumped, vacuum ultraviolet light source

    DOE Patents [OSTI]

    Sze, R.C.; Quigley, G.P.

    1996-12-17

    Large area, surface discharge pumped, vacuum ultraviolet (VUV) light source is disclosed. A contamination-free VUV light source having a 225 cm{sup 2} emission area in the 240-340 nm region of the electromagnetic spectrum with an average output power in this band of about 2 J/cm{sup 2} at a wall-plug efficiency of approximately 5% is described. Only ceramics and metal parts are employed in this surface discharge source. Because of the contamination-free, high photon energy and flux, and short pulse characteristics of the source, it is suitable for semiconductor and flat panel display material processing. 3 figs.

  3. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  4. ULTRAVIOLET NUMBER COUNTS OF GALAXIES FROM SWIFT ULTRAVIOLET/OPTICAL TELESCOPE DEEP IMAGING OF THE CHANDRA DEEP FIELD SOUTH

    SciTech Connect (OSTI)

    Hoversten, E. A.; Gronwall, C.; Koch, T. S.; Roming, P. W. A.; Siegel, M. H.; Berk, D. E. Vanden; Breeveld, A. A.; Curran, P. A.; Still, M.

    2009-11-10

    Deep Swift UV/Optical Telescope (UVOT) imaging of the Chandra Deep Field South is used to measure galaxy number counts in three near-ultraviolet (NUV) filters (uvw2: 1928 A, uvm2: 2246 A, and uvw1: 2600 A) and the u band (3645 A). UVOT observations cover the break in the slope of the NUV number counts with greater precision than the number counts by the Hubble Space Telescope Space Telescope Imaging Spectrograph and the Galaxy Evolution Explorer, spanning a range 21 approx< m{sub AB} approx< 25. Model number counts confirm earlier investigations in favoring models with an evolving galaxy luminosity function.

  5. Bipolar charging of dust particles under ultraviolet radiation

    SciTech Connect (OSTI)

    Filippov, A. V. Babichev, V. N.; Fortov, V. E.; Gavrikov, A. V.; Pal', A. F.; Petrov, O. F.; Starostin, A. N.; Sarkarov, N. E.

    2011-05-15

    The photoemission charging of dust particles under ultraviolet radiation from a xenon lamp has been investigated. The velocities of yttrium dust particles with a work function of 3.3 eV and their charges have been determined experimentally; the latter are about 400-500 and about 100 elementary charges per micron of radius for the positively and negatively charged fractions, respectively. The dust particle charging and the dust cloud evolution in a photoemission cell after exposure to an ultraviolet radiation source under the applied voltage have been simulated numerically. The photoemission charging of dust particles has been calculated on the basis of nonlocal and local charging models. Only unipolar particle charging is shown to take place in a system of polydisperse dust particles with the same photoemission efficiency. It has been established that bipolar charging is possible in the case of monodisperse particles with different quantum efficiencies. Polydispersity in this case facilitates the appearance of oppositely charged particles in a photoemission plasma.

  6. Ultraviolet Free Electron Laser Facility preliminary design report

    SciTech Connect (OSTI)

    Ben-Zvi, I.

    1993-02-01

    This document, the Preliminary Design Report (PDR) for the Brookhaven Ultraviolet Free Electron Laser (UV FEL) facility, describes all the elements of a facility proposed to meet the needs of a research community which requires ultraviolet sources not currently available as laboratory based lasers. Further, for these experiments, the requisite properties are not extant in either the existing second or upcoming third generation synchrotron light sources. This document is the result of our effort at BNL to identify potential users, determine the requirements of their experiments, and to design a facility which can not only satisfy the existing need, but have adequate flexibility for possible future extensions as need dictates and as evolving technology allows. The PDR is comprised of three volumes. In this, the first volume, background for the development of the proposal is given, including descriptions of the UV FEL facility, and representative examples of the science it was designed to perform. Discussion of the limitations and potential directions for growth are also included. A detailed description of the facility design is then provided, which addresses the accelerator, optical, and experimental systems. Information regarding the conventional construction for the facility is contained in an addendum to volume one (IA).

  7. Impact of polymer film thickness and cavity size on polymer flow during embossing : towards process design rules for nanoimprint lithography.

    SciTech Connect (OSTI)

    Schunk, Peter Randall; King, William P. (Georgia Institute of Technology, Atlanta, GA); Sun, Amy Cha-Tien; Rowland, Harry D.

    2006-08-01

    This paper presents continuum simulations of polymer flow during nanoimprint lithography (NIL). The simulations capture the underlying physics of polymer flow from the nanometer to millimeter length scale and examine geometry and thermophysical process quantities affecting cavity filling. Variations in embossing tool geometry and polymer film thickness during viscous flow distinguish different flow driving mechanisms. Three parameters can predict polymer deformation mode: cavity width to polymer thickness ratio, polymer supply ratio, and Capillary number. The ratio of cavity width to initial polymer film thickness determines vertically or laterally dominant deformation. The ratio of indenter width to residual film thickness measures polymer supply beneath the indenter which determines Stokes or squeeze flow. The local geometry ratios can predict a fill time based on laminar flow between plates, Stokes flow, or squeeze flow. Characteristic NIL capillary number based on geometry-dependent fill time distinguishes between capillary or viscous driven flows. The three parameters predict filling modes observed in published studies of NIL deformation over nanometer to millimeter length scales. The work seeks to establish process design rules for NIL and to provide tools for the rational design of NIL master templates, resist polymers, and process parameters.

  8. Context-based automated defect classification system using multiple morphological masks

    DOE Patents [OSTI]

    Gleason, Shaun S. (Knoxville, TN); Hunt, Martin A. (Knoxville, TN); Sari-Sarraf, Hamed (Lubbock, TX)

    2002-01-01

    Automatic detection of defects during the fabrication of semiconductor wafers is largely automated, but the classification of those defects is still performed manually by technicians. This invention includes novel digital image analysis techniques that generate unique feature vector descriptions of semiconductor defects as well as classifiers that use these descriptions to automatically categorize the defects into one of a set of pre-defined classes. Feature extraction techniques based on multiple-focus images, multiple-defect mask images, and segmented semiconductor wafer images are used to create unique feature-based descriptions of the semiconductor defects. These feature-based defect descriptions are subsequently classified by a defect classifier into categories that depend on defect characteristics and defect contextual information, that is, the semiconductor process layer(s) with which the defect comes in contact. At the heart of the system is a knowledge database that stores and distributes historical semiconductor wafer and defect data to guide the feature extraction and classification processes. In summary, this invention takes as its input a set of images containing semiconductor defect information, and generates as its output a classification for the defect that describes not only the defect itself, but also the location of that defect with respect to the semiconductor process layers.

  9. THE EXTREME-ULTRAVIOLET EMISSION FROM SUN-GRAZING COMETS

    SciTech Connect (OSTI)

    Bryans, P.; Pesnell, W. D.

    2012-11-20

    The Atmospheric Imaging Assembly (AIA) on the Solar Dynamics Observatory has observed two Sun-grazing comets as they passed through the solar atmosphere. Both passages resulted in a measurable enhancement of extreme-ultraviolet (EUV) radiance in several of the AIA bandpasses. We explain this EUV emission by considering the evolution of the cometary atmosphere as it interacts with the ambient solar atmosphere. Molecules in the comet rapidly sublimate as it approaches the Sun. They are then photodissociated by the solar radiation field to create atomic species. Subsequent ionization of these atoms produces a higher abundance of ions than normally present in the corona and results in EUV emission in the wavelength ranges of the AIA telescope passbands.

  10. Ultraviolet Resonant Raman Enhancements in the Detection of Explosives

    SciTech Connect (OSTI)

    Short, B J; Carter, J C; Gunter, D; Hovland, P; Jagode, H; Karavanic, K; Marin, G; Mellor-Crummey, J; Moore, S; Norris, B; Oliker, L; Olschanowsky, C; Roth, P C; Schulz, M; Shende, S; Snavely, A; Spear, W

    2009-06-03

    Raman-based spectroscopy is potentially militarily useful for standoff detection of high explosives. Normal (non-resonance) and resonance Raman spectroscopies are both light scattering techniques that use a laser to measure the vibrational spectrum of a sample. In resonance Raman, the laser is tuned to match the wavelength of a strong electronic absorbance in the molecule of interest, whereas, in normal Raman the laser is not tuned to any strong electronic absorbance bands. The selection of appropriate excitation wavelengths in resonance Raman can result in a dramatic increase in the Raman scattering efficiency of select band(s) associated with the electronic transition. Other than the excitation wavelength, however, resonance Raman is performed experimentally the same as normal Raman. In these studies, normal and resonance Raman spectral signatures of select solid high explosive (HE) samples and explosive precursors were collected at 785 nm, 244 nm and 229 nm. Solutions of PETN, TNT, and explosive precursors (DNT & PNT) in acetonitrile solvent as an internal Raman standard were quantitatively evaluated using ultraviolet resonance Raman (UVRR) microscopy and normal Raman spectroscopy as a function of power and select excitation wavelengths. Use of an internal standard allowed resonance enhancements to be estimated at 229 nm and 244 nm. Investigations demonstrated that UVRR provided {approx}2000-fold enhancement at 244 nm and {approx}800-fold improvement at 229 nm while PETN showed a maximum of {approx}25-fold at 244 nm and {approx}190-fold enhancement at 229 nm solely from resonance effects when compared to normal Raman measurements. In addition to the observed resonance enhancements, additional Raman signal enhancements are obtained with ultraviolet excitation (i.e., Raman scattering scales as !4 for measurements based on scattered photons). A model, based partly on the resonance Raman enhancement results for HE solutions, is presented for estimating Raman enhancements for solid HE samples.

  11. Method and apparatus for producing durationally short ultraviolet or X-ray laser pulses

    DOE Patents [OSTI]

    MacGowan, Brian J. (Livermore, CA); Matthews, Dennis L. (El Granada, CA); Trebes, James E. (Livermore, CA)

    1988-01-01

    A method and apparatus is disclosed for producing ultraviolet or X-ray laser pulses of short duration (32). An ultraviolet or X-ray laser pulse of long duration (12) is progressively refracted, across the surface of an opaque barrier (28), by a streaming plasma (22) that is produced by illuminating a solid target (16, 18) with a pulse of conventional line focused high power laser radiation (20). The short pulse of ultraviolet or X-ray laser radiation (32), which may be amplified to high power (40, 42), is separated out by passage through a slit aperture (30) in the opaque barrier (28).

  12. Bright high-repetition-rate source of narrowband extreme-ultraviolet

    Office of Scientific and Technical Information (OSTI)

    harmonics beyond 22 eV (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: Bright high-repetition-rate source of narrowband extreme-ultraviolet harmonics beyond 22 eV Citation Details In-Document Search Title: Bright high-repetition-rate source of narrowband extreme-ultraviolet harmonics beyond 22 eV Table-top sources of extreme ultraviolet (XUV) light based on high-harmonic generation (HHG) provide novel insight into the fundamental properties of molecules,

  13. Radiation-Hardened Circuitry Using Mask-Programmable Analog Arrays. Report 3

    SciTech Connect (OSTI)

    Britton, Jr, Charles L.; Shelton, Jacob H.; Ericson, Milton Nance; Blalock, Benjamin

    2015-03-01

    As the recent accident at Fukushima Daiichi so vividly demonstrated, telerobotic technologies capable of withstanding high radiation environments need to be readily available to enable operations, repair, and recovery under severe accident scenarios when human entry is extremely dangerous or not possible. Telerobotic technologies that enable remote operation in high dose rate environments have undergone revolutionary improvement over the past few decades. However, much of this technology cannot be employed in nuclear power environments because of the radiation sensitivity of the electronics and the organic insulator materials currently in use. This is a report of the activities involving Task 3 of the Nuclear Energy Enabling Technologies (NEET) 2 project Radiation Hardened Circuitry Using Mask-Programmable Analog Arrays [1]. Evaluation of the performance of the system for both pre- and post-irradiation as well as operation at elevated temperature will be performed. Detailed performance of the system will be documented to ensure the design meets requirements prior to any extended evaluation. A suite of tests will be developed which will allow evaluation before and after irradiation and during temperature. Selection of the radiation exposure facilities will be determined in the early phase of the project. Radiation exposure will consist of total integrated dose (TID) up to 200 kRad or above with several intermediate doses during test. Dose rates will be in various ranges determined by the facility that will be used with a target of 30 kRad/hr. Many samples of the pre-commercial devices to be used will have been tested in previous projects to doses of at least 300 kRad and temperatures up to 125C. The complete systems will therefore be tested for performance at intermediate doses. Extended temperature testing will be performed up to the limit of the commercial sensors. The test suite performed at each test point will consist of operational testing of the three basic measurement functions plus electronic functional testing (power dissipation, voltage offset changes, noise variations, etc.). This suite will be developed as part of this task.

  14. Nanofabrication of sharp diamond tips by e-beam lithography and inductively coupled plasma reactive ion etching.

    SciTech Connect (OSTI)

    Moldovan, N.; Divan, R.; Zeng, H.; Carlisle, J. A.; Advanced Diamond Tech.

    2009-12-07

    Ultrasharp diamond tips make excellent atomic force microscopy probes, field emitters, and abrasive articles due to diamond's outstanding physical properties, i.e., hardness, low friction coefficient, low work function, and toughness. Sharp diamond tips are currently fabricated as individual tips or arrays by three principal methods: (1) focused ion beam milling and gluing onto a cantilever of individual diamond tips, (2) coating silicon tips with diamond films, or (3) molding diamond into grooves etched in a sacrificial substrate, bonding the sacrificial substrate to another substrate or electrodepositing of a handling chip, followed by dissolution of the sacrificial substrate. The first method is tedious and serial in nature but does produce very sharp tips, the second method results in tips whose radius is limited by the thickness of the diamond coating, while the third method involves a costly bonding and release process and difficulties in thoroughly filling the high aspect ratio apex of molding grooves with diamond at the nanoscale. To overcome the difficulties with these existing methods, this article reports on the feasibility of the fabrication of sharp diamond tips by direct etching of ultrananocrystalline diamond (UNCD{reg_sign}) as a starting and structural material. The UNCD is reactive ion etched using a cap-precursor-mask scheme. An optimized etching recipe demonstrates the formation of ultrasharp diamond tips ({approx} 10 nm tip radius) with etch rates of 650 nm/min.

  15. The far-ultraviolet UPS and downs of Alpha Centauri (Journal...

    Office of Scientific and Technical Information (OSTI)

    Centauri have yielded a detailed time history of far-ultraviolet (FUV: 1150-1700 ) emissions of the solarlike primary (A: G2 V) and the cooler but more active secondary (B: K1...

  16. Reflective optical imaging systems with balanced distortion

    DOE Patents [OSTI]

    Hudyma, Russell M. (San Ramon, CA)

    2001-01-01

    Optical systems compatible with extreme ultraviolet radiation comprising four reflective elements for projecting a mask image onto a substrate are described. The four optical elements comprise, in order from object to image, convex, concave, convex and concave mirrors. The optical systems are particularly suited for step and scan lithography methods. The invention enables the use of larger slit dimensions associated with ring field scanning optics, improves wafer throughput, and allows higher semiconductor device density. The inventive optical systems are characterized by reduced dynamic distortion because the static distortion is balanced across the slit width.

  17. Ultraviolet light absorbers having two different chromophors in the same molecule

    DOE Patents [OSTI]

    Vogl, O.; Li, S.

    1983-10-06

    This invention relates to novel ultraviolet light absorbers having two chromophors in the same molecule, and more particularly to benzotriazole substituted dihydroxybenzophenones and acetophenones. More particularly, this invention relates to 3,5-(di(2H-benzotriazole-2-yl))-2,4-dihydroxybenzophenone and 3,5-(di(2H-benzotriazole-2-yl))-2,4-dihydroxyacetophenone which are particularly useful as an ultraviolet light absorbers.

  18. Graphene defect formation by extreme ultraviolet generated photoelectrons

    SciTech Connect (OSTI)

    Gao, A. Lee, C. J.; Bijkerk, F.

    2014-08-07

    We have studied the effect of photoelectrons on defect formation in graphene during extreme ultraviolet (EUV) irradiation. Assuming the major role of these low energy electrons, we have mimicked the process by using low energy primary electrons. Graphene is irradiated by an electron beam with energy lower than 80?eV. After e-beam irradiation, it is found that the D peak, I(D), appears in the Raman spectrum, indicating defect formation in graphene. The evolution of I(D)/I(G) follows the amorphization trajectory with increasing irradiation dose, indicating that graphene goes through a transformation from microcrystalline to nanocrystalline and then further to amorphous carbon. Further, irradiation of graphene with increased water partial pressure does not significantly change the Raman spectra, which suggests that, in the extremely low energy range, e-beam induced chemical reactions between residual water and graphene are not the dominant mechanism driving defect formation in graphene. Single layer graphene, partially suspended over holes was irradiated with EUV radiation. By comparing with the Raman results from e-beam irradiation, it is concluded that the photoelectrons, especially those from the valence band, contribute to defect formation in graphene during irradiation.

  19. Ultraviolet reflector materials for solar detoxification of hazardous waste

    SciTech Connect (OSTI)

    Jorgensen, G.; Govindarajan, R.

    1991-07-01

    Organic waste detoxification requires cleavage of carbon bonds. Such reactions can be photo-driven by light that is energetic enough to disrupt such bonds. Alternately, light can be used to activate catalyst materials, which in turn can break organic bonds. In either case, photons with wavelengths less than 400 nm are required. Because the terrestrial solar resource below 400 nm is so small (roughly 3% of the available spectrum), highly efficient optical concentrators are needed that can withstand outdoor service conditions. In the past, optical elements for solar application have been designed to prevent ultraviolet (uv) radiation from reaching the reflective layer to avoid the potentially harmful effects of such light on the collector materials themselves. This effectively forfeits the uv part of the spectrum in return for some measure of protection against optical degradation. To optimize the cost/performance benefit of photochemical reaction systems, optical materials must be developed that are not only highly efficient but also inherently stable against the radiation they are designed to concentrate. The requirements of uv optical elements in terms of appropriate spectral bands and level of reflectance are established based upon the needs of photochemical applications. Relevant literature on uv reflector materials is reviewed which, along with discussions with industrial contacts, allows the establishment of a data base of currently available materials. Although a number of related technologies exist that require uv reflectors, to date little attention has been paid to achieving outdoor durability required for solar applications. 49 refs., 3 figs.

  20. Ultraviolet photodissociation of OCS: Product energy and angular distributions

    SciTech Connect (OSTI)

    McBane, G. C. [Department of Chemistry, Grand Valley State University, Allendale, Michigan 49401 (United States); Schmidt, J. A.; Johnson, M. S. [Department of Chemistry, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen O (Denmark); Schinke, R. [Max-Planck-Institut fuer Dynamik und Selbstorganisation (MPIDS), D-37077 Goettingen (Germany)

    2013-03-07

    The ultraviolet photodissociation of carbonyl sulfide (OCS) was studied using three-dimensional potential energy surfaces and both quantum mechanical dynamics calculations and classical trajectory calculations including surface hopping. The transition dipole moment functions used in an earlier study [J. A. Schmidt, M. S. Johnson, G. C. McBane, and R. Schinke, J. Chem. Phys. 137, 054313 (2012)] were improved with more extensive treatment of excited electronic states. The new functions indicate a much larger contribution from the 1 {sup 1}A{sup Double-Prime} state ({sup 1}{Sigma}{sup -} in linear OCS) than was found in the previous work. The new transition dipole functions yield absorption spectra that agree with experimental data just as well as the earlier ones. The previously reported potential energy surfaces were also empirically modified in the region far from linearity. The resulting product state distributions P{sub v,j}, angular anisotropy parameters {beta}(j), and carbon monoxide rotational alignment parameters A{sub 0}{sup (2)}(j) agree reasonably well with the experimental results, while those computed from the earlier transition dipole and potential energy functions do not. The higher-j peak in the bimodal rotational distribution is shown to arise from nonadiabatic transitions from state 2 {sup 1}A{sup Prime} to the OCS ground state late in the dissociation.

  1. Xe capillary target for laser-plasma extreme ultraviolet source

    SciTech Connect (OSTI)

    Inoue, Takahiro; Okino, Hideyasu; Nica, Petru Edward; Amano, Sho; Miyamoto, Shuji; Mochizuki, Takayasu

    2007-10-15

    A cryogenic Xe jet system with an annular nozzle has been developed in order to continuously fast supply a Xe capillary target for generating a laser-plasma extreme ultraviolet (EUV) source. The cooling power of the system was evaluated to be 54 W, and the temperature stability was {+-}0.5 K at a cooling temperature of about 180 K. We investigated experimentally the influence of pressure loss inside an annular nozzle on target formation by shortening the nozzle length. Spraying caused by cavitation was mostly suppressed by mitigating the pressure loss, and a focused jet was formed. Around a liquid-solid boundary, a solid-Xe capillary target (100/70 {mu}m {phi}) was formed with a velocity of {<=}0.01 m/s. Laser-plasma EUV generation was tested by focusing a Nd:YAG laser beam on the target. The results suggested that an even thinner-walled capillary target is required to realize the inertial confinement effect.

  2. AN EXTREME-ULTRAVIOLET WAVE ASSOCIATED WITH A SURGE

    SciTech Connect (OSTI)

    Zheng, Ruisheng; Jiang, Yunchun; Yang, Jiayan; Bi, Yi; Hong, Junchao; Yang, Bo; Yang, Dan

    2013-02-10

    Taking advantage of the high temporal and spatial resolution observations from the Solar Dynamics Observatory, we present an extreme-ultraviolet (EUV) wave associated with a surge on 2010 November 13. Due to the magnetic flux cancelation, some surges formed in the source active region (AR). The strongest surge produced our studied event. The surge was deflected by the nearby loops that connected to another AR, and disrupted the overlying loops that slowly expanded and eventually evolved into a weak coronal mass ejection (CME). The surge was likely associated with the core of the CME. The EUV wave happened after the surge deflected. The wave departed far from the flare center and showed a close location relative to the deflected surge. The wave propagated in a narrow angular extent, mainly in the ejection direction of the surge. The close timing and location relations between the EUV wave and the surge indicate that the wave was closely associated with the CME. The wave had a velocity of 310-350 km s{sup -1}, while the speeds of the surge and the expanding loops were about 130 and 150 km s{sup -1}, respectively. All of the results suggest that the EUV wave was a fast-mode wave and was most likely triggered by the weak CME.

  3. Ultrasonic generator and detector using an optical mask having a grating for launching a plurality of spatially distributed, time varying strain pulses in a sample

    DOE Patents [OSTI]

    Maris, Humphrey J. (Barrington, RI)

    2002-01-01

    A method and a system are disclosed for determining at least one characteristic of a sample that contains a substrate and at least one film disposed on or over a surface of the substrate. The method includes a first step of placing a mask over a free surface of the at least one film, where the mask has a top surface and a bottom surface that is placed adjacent to the free surface of the film. The bottom surface of the mask has formed therein or thereon a plurality of features for forming at least one grating. A next step directs optical pump pulses through the mask to the free surface of the film, where individual ones of the pump pulses are followed by at least one optical probe pulse. The pump pulses are spatially distributed by the grating for launching a plurality of spatially distributed, time varying strain pulses within the film, which cause a detectable change in optical constants of the film. A next step detects a reflected or a transmitted portion of the probe pulses, which are also spatially distributed by the grating. A next step measures a change in at least one characteristic of at least one of reflected or transmitted probe pulses due to the change in optical constants, and a further step determines the at least one characteristic of the sample from the measured change in the at least one characteristic of the probe pulses. An optical mask is also disclosed herein, and forms a part of these teachings.

  4. Ultrasonic generator and detector using an optical mask having a grating for launching a plurality of spatially distributed, time varying strain pulses in a sample

    DOE Patents [OSTI]

    Maris, Humphrey J. (Barrington, RI)

    2003-01-01

    A method and a system are disclosed for determining at least one characteristic of a sample that contains a substrate and at least one film disposed on or over a surface of the substrate. The method includes a first step of placing a mask over a free surface of the at least one film, where the mask has a top surface and a bottom surface that is placed adjacent to the free surface of the film. The bottom surface of the mask has formed therein or thereon a plurality of features for forming at least one grating. A next step directs optical pump pulses through the mask to the free surface of the film, where individual ones of the pump pulses are followed by at least one optical probe pulse. The pump pulses are spatially distributed by the grating for launching a plurality of spatially distributed, time varying strain pulses within the film, which cause a detectable change in optical constants of the film. A next step detects a reflected or a transmitted portion of the probe pulses, which are also spatially distributed by the grating. A next step measures a change in at least one characteristic of at least one of reflected or transmitted probe pulses due to the change in optical constants, and a further step determines the at least one characteristic of the sample from the measured change in the at least one characteristic of the probe pulses. An optical mask is also disclosed herein, and forms a part of these teachings.

  5. Solvent Immersion Imprint Lithography

    SciTech Connect (OSTI)

    Vasdekis, Andreas E.; Wilkins, Michael J.; Grate, Jay W.; Kelly, Ryan T.; Konopka, Allan; Xantheas, Sotiris S.; Chang, M. T.

    2014-06-21

    The mechanism of polymer disolution was explored for polymer microsystem prototyping, including microfluidics and optofluidics. Polymer films are immersed in a solvent, imprinted and finally brought into contact with a non-modified surface to permanently bond. The underlying polymer-solvent interactions were experimentally and theoretically investigated, and enabled rapid polymer microsystem prototyping. During imprinting, small molecule integration in the molded surfaces was feasible, a principle applied to oxygen sensing. Polystyrene (PS) was employed for microbiological studies at extreme environmental conditions. The thermophile anaerobe Clostridium Thermocellum was grown in PS pore-scale micromodels, revealing a double mean generation lifetime than under ideal culture conditions. Microsystem prototyping through directed polymer dissolution is simple and accessible, while simultaneous patterning, bonding, and surface/volume functionalization are possible in less than one minute.

  6. Advances in Lithography

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    algorithm customized for partially coherent imaging and targeted for fast and accurate retrieval. For information, see Yamazoe et al., pp. B34-B43, part of the Applied...

  7. SU-E-T-603: Analysis of Optical Tracked Head Inter-Fraction Movements Within Masks to Access Intracranial Immobilization Techniques in Proton Therapy

    SciTech Connect (OSTI)

    Hsi, W; Zeidan, O

    2014-06-01

    Purpose: We present a quantitative methodology utilizing an optical tracking system for monitoring head inter-fraction movements within brain masks to assess the effectiveness of two intracranial immobilization techniques. Methods and Materials: A 3-point-tracking method was developed to measure the mask location for a treatment field at each fraction. Measured displacement of mask location to its location at first fraction is equivalent to the head movement within the mask. Head movements for each of treatment fields were measured over about 10 fractions at each patient for seven patients; five treated in supine and two treated in prone. The Q-fix Base-of-Skull head frame was used in supine while the CIVCO uni-frame baseplate was used in prone. Displacements of recoded couch position of each field post imaging at each fraction were extracted for those seven patients. Standard deviation (S.D.) of head movements and couch displacements was scored for statistical analysis. Results: The accuracy of 3PtTrack method was within 1.0 mm by phantom measurements. Patterns of head movement and couch displacement were similar for patients treated in either supine or prone. In superior-inferior direction, mean value of scored standard deviations over seven patients were 1.6 mm and 3.4 mm for the head movement and the couch displacement, respectively. The result indicated that the head movement combined with a loose fixation between the mask-to-head frame results large couch displacements for each patient, and also large variation between patients. However, the head movement is the main cause for the couch displacement with similar magnitude of around 1.0 mm in anterior-posterior and lateral directions. Conclusions: Optical-tracking methodology independently quantifying head movements could improve immobilization devices by correctly acting on causes for head motions within mask. A confidence in the quality of intracranial immobilization techniques could be more efficient by eliminating the need for frequent imaging.

  8. Method for the detection of nitro-containing compositions using ultraviolet photolysis

    DOE Patents [OSTI]

    Reagen, William K. (Stillwater, MN); Lancaster, Gregory D. (Idaho Falls, ID); Partin, Judy K. (Idaho Falls, ID); Moore, Glenn A. (Idaho Falls, ID)

    2000-01-01

    A method for detecting nitro-containing compositions (e.g. nitrate/nitrite materials) in water samples and on solid substrates. In a water sample, ultraviolet light is applied to the sample so that dissolved nitro compositions therein will photolytically dissociate into gaseous nitrogen oxides (NO.sub.2(g) and/or NO.sub.(g)). A carrier gas is then introduced into the sample to generate a gaseous stream which includes the carrier gas combined with any gaseous nitrogen oxides. The carrier gas is thereafter directed into a detector. To detect nitro-compositions on solid substrates, ultraviolet light is applied thereto. A detector is then used to detect any gaseous nitrogen oxides which are photolytically generated during ultraviolet illumination. An optional carrier gas may be applied to the substrate during illumination to produce a gaseous stream which includes the carrier gas and any gaseous nitrogen oxides. The gaseous stream is then supplied to the detector.

  9. A new facility for the synchrotron radiation-based calibration of transfer radiation sources in the ultraviolet and vacuum ultraviolet spectral range

    SciTech Connect (OSTI)

    Thornagel, Reiner; Fliegauf, Rolf; Klein, Roman Kroth, Simone; Paustian, Wolfgang; Richter, Mathias

    2015-01-15

    The Physikalisch-Technische Bundesanstalt (PTB) has a long tradition in the calibration of radiation sources in the ultraviolet and vacuum ultraviolet spectral range, with traceability to calculable synchrotron radiation. Within this context, new instrumentation in the PTB laboratory at the Metrology Light Source (MLS) has been put into operation that opens up extended and improved calibration possibilities. A new facility for radiation source calibrations has been set up in the spectral range from 7 nm to 400 nm based on a combined normal incidence-grazing incidence monochromator. The facility can be used for the calibration of transfer sources in terms of spectral radiant intensity or mean spectral radiance, with traceability to the MLS primary source standard. We describe the design and performance of the experimental station and give examples of some commissioning results.

  10. Wave-mixing with high-order harmonics in extreme ultraviolet region

    SciTech Connect (OSTI)

    Dao, Lap Van; Dinh, Khuong Ba; Le, Hoang Vu; Gaffney, Naylyn; Hannaford, Peter

    2015-01-12

    We report studies of the wave-mixing process in the extreme ultraviolet region with two near-infrared driving and controlling pulses with incommensurate frequencies (at 1400 nm and 800 nm). A non-collinear scheme for the two beams is used in order to spatially separate and to characterise the properties of the high-order wave-mixing field. We show that the extreme ultraviolet frequency mixing can be treated by perturbative, very high-order nonlinear optics; the modification of the wave-packet of the free electron needs to be considered in this process.

  11. Surface photoconductivity of organosilicate glass dielectrics induced by vacuum-ultraviolet radiation

    SciTech Connect (OSTI)

    Zheng, H.; Nichols, M. T.; Pei, D.; Shohet, J. L.; Nishi, Y.

    2013-08-14

    The temporary increase in the electrical surface conductivity of low-k organosilicate glass (SiCOH) during exposure to vacuum-ultraviolet radiation (VUV) is investigated. To measure the photoconductivity, patterned comb structures are deposited on dielectric films and exposed to synchrotron radiation in the range of 825 eV, which is in the energy range of most plasma vacuum-ultraviolet radiation. The change in photo surface conductivity induced by VUV radiation may be beneficial in limiting charging damage of dielectrics by depleting the plasma-deposited charge.

  12. Type IIb supernova SN 2011dh: Spectra and photometry from the ultraviolet

    Office of Scientific and Technical Information (OSTI)

    to the near-infrared (Journal Article) | SciTech Connect Type IIb supernova SN 2011dh: Spectra and photometry from the ultraviolet to the near-infrared Citation Details In-Document Search Title: Type IIb supernova SN 2011dh: Spectra and photometry from the ultraviolet to the near-infrared We report spectroscopic and photometric observations of the Type IIb SN 2011dh obtained between 4 and 34 days after the estimated date of explosion (May 31.5 UT). The data cover a wide wavelength range from

  13. Photoluminescence performance of thulium doped Li{sub 4}SrCa(SiO{sub 4}){sub 2} under irradiation of ultraviolet and vacuum ultraviolet lights

    SciTech Connect (OSTI)

    Wang, Zhaofeng; Li, Yezhou; Liu, Xiong; Wei, Xingmin; Chen, Yueling; Zhou, Fei; Wang, Yuhua

    2014-11-15

    Highlights: A novel blue-emitting phosphor Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} was reported. Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} exhibited excellent thermal and irradiation stability. Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} was found to possess high color purity. - Abstract: In this work, we synthesized Tm{sup 3+} doped Li{sub 4}SrCa(SiO{sub 4}){sub 2} phosphors and investigated their photoluminescence properties under the excitation of ultraviolet and vacuum ultraviolet lights. The crystal structure analysis and variation of cell parameters confirm that Tm{sup 3+} ions have been successfully doped in the structure of Li{sub 4}SrCa(SiO{sub 4}){sub 2} host by occupying the sites of Ca{sup 2+} with the coordination number of 6. The luminescence results suggest that Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} is a good blue-emitting phosphor when excited by ultraviolet and vacuum ultraviolet irradiations. In addition, it is observed that there is nearly no degradation for Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} after undergoing thermal and irradiation treatments. Possible mechanisms for the luminescence processes are proposed on the basis of the discussion of excitation and emission spectra. In particular, the emission color of Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} by excitation of 147 and 172 nm irradiations is very close to the standard blue color, suggesting that it could be potentially applied in plasma display panels and mercury-free fluorescence lamps.

  14. Lubricating bacteria model for the growth of bacterial colonies exposed to ultraviolet radiation

    SciTech Connect (OSTI)

    Zhang Shengli; Zhang Lei; Liang Run; Zhang Erhu; Liu Yachao; Zhao Shumin

    2005-11-01

    In this paper, we study the morphological transition of bacterial colonies exposed to ultraviolet radiation by modifying the bacteria model proposed by Delprato et al. Our model considers four factors: the lubricant fluid generated by bacterial colonies, a chemotaxis initiated by the ultraviolet radiation, the intensity of the ultraviolet radiation, and the bacteria's two-stage destruction rate with given radiation intensities. Using this modified model, we simulate the ringlike pattern formation of the bacterial colony exposed to uniform ultraviolet radiation. The following is shown. (1) Without the UV radiation the colony forms a disklike pattern and reaches a constant front velocity. (2) After the radiation is switched on, the bacterial population migrates to the edge of the colony and forms a ringlike pattern. As the intensity of the UV radiation is increased the ring forms faster and the outer velocity of the colony decreases. (3) For higher radiation intensities the total population decreases, while for lower intensities the total population increases initially at a small rate and then decreases. (4) After the UV radiation is switched off, the bacterial population grows both outward as well as into the inner region, and the colony's outer front velocity recovers to a constant value. All these results agree well with the experimental observations [Phys. Rev. Lett. 87, 158102 (2001)]. Along with the chemotaxis, we find that lubricant fluid and the two-stage destruction rate are critical to the dynamics of the growth of the bacterial colony when exposed to UV radiation, and these were not previously considered.

  15. Ultraviolet light absorbers having two different chromophors in the same molecule

    DOE Patents [OSTI]

    Vogl, Otto (Brooklyn, NY); Li, Shanjun (Brooklyn, NY)

    1988-05-17

    Ultraviolet light absorbing compounds having two different chromophors in the same molecule, particularly the benzotriazole chromophor and either the dihydroxybenzophenone or dihydroxyacetophenone chromophor; specifically, the two compounds 3,5-[di(2H-benzotriazole-2-yl)]-2,4-dihydroxyacetophenone and 3,5-[di(2H-benzotriazole-2-yl)]2,4-dihydroxybenzophenone.

  16. Applying a tapered electrode on a porous ceramic support tube by masking a band inside the tube and drawing in electrode material from the outside of the tube by suction

    DOE Patents [OSTI]

    Vasilow, Theodore R. (Penn Township, Westmoreland County, PA); Zymboly, Gregory E. (Murrysville, PA)

    1991-01-01

    An electrode is deposited on a support by providing a porous ceramic support tube (10) having an open end (14) and closed end (16); masking at least one circumferential interior band (18 and 18') inside the tube; evacuating air from the tube by an evacuation system (30), to provide a permeability gradient between the masked part (18 and 18') and unmasked part (20) of the tube; applying a liquid dispersion of solid electrode particles to the outside surface of the support tube, where liquid flows through the wall, forming a uniform coating (42) over the unmasked support part (20) and a tapered coating over the masked part (18 and 18').

  17. Applying a tapered electrode on a porous ceramic support tube by masking a band inside the tube and drawing in electrode material from the outside of the tube by suction

    DOE Patents [OSTI]

    Vasilow, T.R.; Zymboly, G.E.

    1991-12-17

    An electrode is deposited on a support by providing a porous ceramic support tube having an open end and closed end; masking at least one circumferential interior band inside the tube; evacuating air from the tube by an evacuation system, to provide a permeability gradient between the masked part and unmasked part of the tube; applying a liquid dispersion of solid electrode particles to the outside surface of the support tube, where liquid flows through the wall, forming a uniform coating over the unmasked support part and a tapered coating over the masked part. 2 figures.

  18. Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography

    SciTech Connect (OSTI)

    Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-07-07

    The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6 through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350?mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

  19. Ultraviolet and white photon avalanche upconversion in Ho{sup 3+}-doped nanophase glass ceramics

    SciTech Connect (OSTI)

    Lahoz, F.; Martin, I.R.; Calvilla-Quintero, J.M.

    2005-01-31

    Ho{sup 3+}-doped fluoride nanophase glass ceramics have been synthesized from silica-based oxyfluoride glass. An intense white emission light is observed by the naked eye under near infrared excitation at 750 nm. This visible upconversion is due to three strong emission bands in the primary color components, red, green, and blue. Besides, ultraviolet signals are also recorded upon the same excitation wavelength. The excitation mechanism of both the ultraviolet and the visible emissions is a photon avalanche process with a relatively low pump power threshold at about 20 mW. The total upconverted emission intensity has been estimated to increase by about a factor of 20 in the glass ceramic compared to the precursor glass, in which an avalanche type mechanism is not generated.

  20. Ultraviolet high-spectral-resolution Doppler lidar for measuring wind field and aerosol optical properties

    SciTech Connect (OSTI)

    Imaki, Masaharu; Kobayashi, Takao

    2005-10-01

    An ultraviolet incoherent Doppler lidar that incorporates the high-spectral-resolution (HSR) technique has been developed for measuring the wind field and aerosol optical properties in the troposphere. An injection seeded and tripled Nd:YAG laser at an ultraviolet wavelength of 355 nm was used in the lidar system. The HRS technique can resolve the aerosol Mie backscatter and the molecular Rayleigh backscatter to derive the signal components. By detecting the Mie backscatter, a great increase in the Doppler filter sensitivity was realized compared to the conventional incoherent Doppler lidars that detected the Rayleigh backscatter. The wind velocity distribution in a two-dimensional cross section was measured. By using the HSR technique, multifunction and absolute value measurements were realized for aerosol extinction, and volume backscatter coefficients; the laser beam transmittance, the lidar ratio, and the backscatter ratio are derived from these measurements.

  1. Improved energy efficiency by use of the new ultraviolet light radiation paint curing process

    SciTech Connect (OSTI)

    Grosset, A.M.; Su, W.-F.A.

    1984-08-01

    In product finishing lines, ultraviolet radiation curing of paints on prefabricated structures is more energy efficient than curing by natural gas fired ovens, and could eliminate solvent emission. The replacement of a conventional natural gas fired oven by an ultraviolet radiation curing line for paint curing could save quadrillions of joules per year for each finishing line. In this program sponsored by the U.S. Department of Energy, Office of Industrial Programs, two photoinduced polymerizations, via free radical or cationic mechanisms, were considered in the formulation of UV curable paints. The spectral output of radiation sources was chosen so as to complement the absorption spectra of pigments and photoactive agents; thus highly pigmented thick films could be cured fully by UV radiation. One coat enamels, topcoats, and primers have been developed which can be applied on three dimensional objects by spraying and can be cured by passing through a tunnel containing UV lamps.

  2. Ultraviolet and electron irradiation of DC-704 siloxane oil in zinc orthotitanate paint

    SciTech Connect (OSTI)

    Mossman, D.L.; Barsh, M.K.; Greenberg, S.A.

    1982-01-01

    Discrepancies exist between accelerated laboratory simulation and geosynchronous orbit flight data for zinc orthotitanate (ZOT) paint degradation. The effects of ultraviolet and electron irradiation on ZOT contaminated with DC-704 silicone oil are reported. In-situ solar absorptance and emittance changes for contaminated and clean specimens are discussed with reference to post-test surface morphology, determined by scanning electron microscope analysis. Features of the contaminated ZOT degradation kinetics correlate with orbital performance.

  3. Enhanced multicolor fluorescence in bioimaging using deep-ultraviolet surface plasmon resonance

    SciTech Connect (OSTI)

    Kikawada, Masakazu; Ono, Atsushi; Inami, Wataru; Kawata, Yoshimasa

    2014-06-02

    Enhanced multicolor fluorescence has been achieved using deep-ultraviolet surface plasmon resonance (DUV-SPR) on an aluminum thin film using the Kretschmann configuration. The film thickness and the incident angle of the light were optimized by calculations using the Fresnel equations. The presence of a surface oxide layer was also considered in the calculations. Experimental measurements showed that DUV-SPR led to a strong enhancement of the fluorescence intensity from both quantum dots and dye-labeled cells.

  4. Paving the Way to Nanoelectronics 16 nm and Smaller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    will no longer be feasible. Extreme ultraviolet (EUV) lithography, utilizing reflective optics and 13-nm-wavelength light to print chips, is the leading candidate to meet the...

  5. The Ultraviolet Surprise. Efficient Soft X-Ray High Harmonic Generation in Multiply-Ionized Plasmas

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Popmintchev, Dimitar; Hernandez-Garcia, Carlos; Dollar, Franklin; Mancuso, Christopher; Perez-Hernandez, Jose A.; Chen, Ming-Chang; Hankla, Amelia; Gao, Xiaohui; Shim, Bonggu; Gaeta, Alexander L.; et al

    2015-12-04

    High-harmonic generation is a universal response of matter to strong femtosecond laser fields, coherently upconverting light to much shorter wavelengths. Optimizing the conversion of laser light into soft x-rays typically demands a trade-off between two competing factors. Reduced quantum diffusion of the radiating electron wave function results in emission from each species which is highest when a short-wavelength ultraviolet driving laser is used. But, phase matching—the constructive addition of x-ray waves from a large number of atoms—favors longer-wavelength mid-infrared lasers. We identified a regime of high-harmonic generation driven by 40-cycle ultraviolet lasers in waveguides that can generate bright beams inmore »the soft x-ray region of the spectrum, up to photon energies of 280 electron volts. Surprisingly, the high ultraviolet refractive indices of both neutral atoms and ions enabled effective phase matching, even in a multiply ionized plasma. We observed harmonics with very narrow linewidths, while calculations show that the x-rays emerge as nearly time-bandwidth–limited pulse trains of ~100 attoseconds.« less

  6. The Ultraviolet Surprise. Efficient Soft X-Ray High Harmonic Generation in Multiply-Ionized Plasmas

    SciTech Connect (OSTI)

    Popmintchev, Dimitar; Hernandez-Garcia, Carlos; Dollar, Franklin; Mancuso, Christopher; Perez-Hernandez, Jose A.; Chen, Ming-Chang; Hankla, Amelia; Gao, Xiaohui; Shim, Bonggu; Gaeta, Alexander L.; Tarazkar, Maryam; Romanov, Dmitri A.; Levis, Robert J.; Gaffney, Jim A.; Foord, Mark; Libby, Stephen B.; Jaron-Becker, Agnieskzka; Becker, Andreas; Plaja, Luis; Muranane, Margaret M.; Kapteyn, Henry C.; Popmintchev, Tenio

    2015-12-04

    High-harmonic generation is a universal response of matter to strong femtosecond laser fields, coherently upconverting light to much shorter wavelengths. Optimizing the conversion of laser light into soft x-rays typically demands a trade-off between two competing factors. Reduced quantum diffusion of the radiating electron wave function results in emission from each species which is highest when a short-wavelength ultraviolet driving laser is used. But, phase matching—the constructive addition of x-ray waves from a large number of atoms—favors longer-wavelength mid-infrared lasers. We identified a regime of high-harmonic generation driven by 40-cycle ultraviolet lasers in waveguides that can generate bright beams in the soft x-ray region of the spectrum, up to photon energies of 280 electron volts. Surprisingly, the high ultraviolet refractive indices of both neutral atoms and ions enabled effective phase matching, even in a multiply ionized plasma. We observed harmonics with very narrow linewidths, while calculations show that the x-rays emerge as nearly time-bandwidth–limited pulse trains of ~100 attoseconds.

  7. Photodegradation of aniline by goethite doped with boron under ultraviolet and visible light irradiation

    SciTech Connect (OSTI)

    Liu, Guanglong; Liao, Shuijiao; College of Basic Sciences of Huazhong Agricultural University, Wuhan 430070 ; Zhu, Duanwei; Liu, Linghua; Cheng, Dongsheng; Zhou, Huaidong

    2011-08-15

    Highlights: {yields} Goethite modified by boron was prepared by sol-gel method in presence of boron acid at the low temperature. {yields} B-goethite has slight red shift in the band gap transition beside their stronger light absorption compared with pristine goethite. {yields} The results showed that semiconductor photocatalytic reaction mechanism should exist in the process of aniline degradation with goethite and B-goethite as photocatalyst. -- Abstract: In the present study, goethite and goethite doped with boron (B-goethite) were employed to detect the presence or absence of semiconductor photocatalytic reaction mechanism in the reaction systems. B-goethite was prepared by sol-gel method in presence of boron acid in order to improve its photocatalystic efficiency under the ultraviolet and visible light irradiation. The optical properties of goethite and B-goethite were characterized by ultraviolet and visible absorption spectra and the result indicated that B-goethite has slight red shift in the band gap transition beside their stronger light absorption compared with pristine goethite. Degradation of aniline was investigated in presence of goethite and B-goethite in aqueous solution. It was found that the B-goethite photocatalyst exhibited enhanced ultraviolet and visible light photocatalytic activity in degradation of aniline compared with the pristine goethite. The photocatalytic degradation mechanism of B-goethite was discussed.

  8. RHIC prefire protection masks

    SciTech Connect (OSTI)

    Drees, A.; Biscardi, C.; Curcio, T.; Gassner, D.; DeSanto, L.; Fu, W.; Liaw, C. J.; Montag, C.; Thieberger, P.; Yip, K.

    2015-01-07

    The protection of the RHIC experimental detectors from damage due to beam hitting close upstream elements in cases of abort kicker prefires requires some dedicated precautionary measures with two general options: to bring the beam close to a limiting aperture (i.e. the beam pipe wall), as far upstream of the detector components as possible or, alternatively, to bring a limiting aperture close to the circulating beam. Spontaneous and random prefires of abort kicker modules (Pulse Forming Network, PFN) have a history as long as RHIC is being operated. The abort system consist of 5 kickers in per ring, each of them equipped with its own dedicated PFN.

  9. Design of a Physical Point-Absorbing WEC Model on which Multiple Control Strategies will be Tested at Large Scale in the MASK Basin

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Design of a Physical Point-Absorbing WEC Model on which Multiple Control Strategies will be Tested at Large Scale in the MASK Basin Diana L. Bull 1 , Ryan G. Coe 1 , Mark Monda 3 , Kevin Dullea 2 , Giorgio Bacelli 1 , David Patterson 1 1 Water Power Technologies, 2 Intelligent Systems Control, 3 Robotic and Security Systems Sandia National Laboratories, Albuquerque, NM 87185-1124 ABSTRACT A new multi-year effort has been launched by the Department of Energy to validate the extent to which

  10. Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates

    SciTech Connect (OSTI)

    Akabori, M.; Yamada, S.

    2013-12-04

    We prepared InAs nanowires (NWs) by lateral growth on GaAs (110) masked substrates in molecular beam epitaxy. We measured magneto-transport properties of the InAs NWs. In spite of parallel-NW multi-channels, we observed fluctuating magneto-conductance. From the fluctuation, we evaluated phase coherence length as a function of measurement temperature, and found decrease in the length with increase in the temperature. We also evaluate phase coherence length as a function of gate voltage.

  11. JET ROTATION INVESTIGATED IN THE NEAR-ULTRAVIOLET WITH THE HUBBLE SPACE TELESCOPE IMAGING SPECTROGRAPH

    SciTech Connect (OSTI)

    Coffey, Deirdre; Ray, Thomas P.; Rigliaco, Elisabetta; Bacciotti, Francesca; Eisloeffel, Jochen

    2012-04-20

    We present results of the second phase of our near-ultraviolet investigation into protostellar jet rotation using the Hubble Space Telescope Imaging Spectrograph. We obtain long-slit spectra at the base of five T Tauri jets to determine if there is a difference in radial velocity between the jet borders which may be interpreted as a rotation signature. These observations are extremely challenging and push the limits of current instrumentation, but have the potential to provide long-awaited observational support for the magnetocentrifugal mechanism of jet launching in which jets remove angular momentum from protostellar systems. We successfully detect all five jet targets (from RW Aur, HN Tau, DP Tau, and CW Tau) in several near-ultraviolet emission lines, including the strong Mg II doublet. However, only RW Aur's bipolar jet presents a sufficiently high signal-to-noise ratio to allow for analysis. The approaching jet lobe shows a difference of 10 km s{sup -1} in a direction which agrees with the disk rotation sense, but is opposite to previously published optical measurements for the receding jet. The near-ultraviolet difference is not found six months later, nor is it found in the fainter receding jet. Overall, in the case of RW Aur, differences are not consistent with a simple jet rotation interpretation. Indeed, given the renowned complexity and variability of this system, it now seems likely that any rotation signature is confused by other influences, with the inevitable conclusion that RW Aur is not suited to a jet rotation study.

  12. Cooperative effect of ultraviolet and near-infrared beams in laser-induced condensation

    SciTech Connect (OSTI)

    Matthews, M.; Henin, S.; Pomel, F.; Kasparian, J.; Wolf, J.-P.; Thberge, F.; Daigle, J.-F.; Lassonde, P.; Kieffer, J.-C.

    2013-12-23

    We demonstrate the cooperative effect of near infrared (NIR) and ultraviolet (UV) beams on laser-induced condensation. Launching a UV laser after a NIR pulse yields up to a 5-fold increase in the production of nanoparticles (25300 nm) as compared to a single NIR beam. This cooperative effect exceeds the sum of those from the individual beams and occurs for delays up to 1 ?s. We attribute it to the UV photolysis of ozone created by the NIR pulses. The resulting OH radicals oxidize NO{sub 2} and volatile organic compounds, producing condensable species.

  13. Vacuum ultraviolet and infrared spectra of condensed methyl acetate on cold astrochemical dust analogs

    SciTech Connect (OSTI)

    Sivaraman, B.; Nair, B. G.; Mason, N. J.; Lo, J.-I.; Cheng, B.-M.; Kundu, S.; Davis, D.; Prabhudesai, V.; Krishnakumar, E.; Raja Sekhar, B. N.

    2013-12-01

    Following the recent report of the first identification of methyl acetate (CH{sub 3}COOCH{sub 3}) in the interstellar medium (ISM), we have carried out vacuum ultraviolet (VUV) and infrared (IR) spectroscopy studies on methyl acetate from 10 K until sublimation in an ultrahigh vacuum chamber simulating astrochemical conditions. We present the first VUV and IR spectra of methyl acetate relevant to ISM conditions. Spectral signatures clearly showed molecular reorientation to have started in the ice by annealing the amorphous ice formed at 10 K. An irreversible phase change from amorphous to crystalline methyl acetate ice was found to occur between 110 K and 120 K.

  14. Improving Ramsey spectroscopy in the extreme-ultraviolet region with a random-sampling approach

    SciTech Connect (OSTI)

    Eramo, R.; Bellini, M. [Istituto Nazionale di Ottica (INO-CNR), Largo E. Fermi 6, I-50125 Florence (Italy); European Laboratory for Non-linear Spectroscopy (LENS), I-50019 Sesto Fiorentino, Florence (Italy); Corsi, C.; Liontos, I. [European Laboratory for Non-linear Spectroscopy (LENS), I-50019 Sesto Fiorentino, Florence (Italy); Cavalieri, S. [European Laboratory for Non-linear Spectroscopy (LENS), I-50019 Sesto Fiorentino, Florence (Italy); Department of Physics, University of Florence, I-50019 Sesto Fiorentino, Florence (Italy)

    2011-04-15

    Ramsey-like techniques, based on the coherent excitation of a sample by delayed and phase-correlated pulses, are promising tools for high-precision spectroscopic tests of QED in the extreme-ultraviolet (xuv) spectral region, but currently suffer experimental limitations related to long acquisition times and critical stability issues. Here we propose a random subsampling approach to Ramsey spectroscopy that, by allowing experimentalists to reach a given spectral resolution goal in a fraction of the usual acquisition time, leads to substantial improvements in high-resolution spectroscopy and may open the way to a widespread application of Ramsey-like techniques to precision measurements in the xuv spectral region.

  15. Highly reproducible and reliable metal/graphene contact by ultraviolet-ozone treatment

    SciTech Connect (OSTI)

    Li, Wei [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Hacker, Christina A.; Cheng, Guangjun; Hight Walker, A. R.; Richter, Curt A.; Gundlach, David J., E-mail: david.gundlach@nist.gov, E-mail: liangxl@pku.edu.cn [Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Liang, Yiran; Tian, Boyuan; Liang, Xuelei, E-mail: david.gundlach@nist.gov, E-mail: liangxl@pku.edu.cn; Peng, Lianmao [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China)

    2014-03-21

    Resist residue from the device fabrication process is a significant source of contamination at the metal/graphene contact interface. Ultraviolet Ozone (UVO) treatment is proven here, by X-ray photoelectron spectroscopy and Raman measurement, to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices that were fabricated by using UVO treatment of the metal/graphene contact region show that stable and reproducible low resistance metal/graphene contacts are obtained and the electrical properties of the graphene channel remain unaffected.

  16. Chemo-physical properties of renal capsules under ultraviolet-c exposure

    SciTech Connect (OSTI)

    Baghapour, Sh.; Parvin, P. Mokhtari, S.; Reyhani, A.; Mortazavi, S. Z.; Amjadi, A.

    2014-08-07

    The renal capsule tissue of lamb was irradiated with ultraviolet-C light and the treated samples were analyzed by uniaxial tensile test, dynamic mechanical analysis, attenuated total reflectance Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and contact angle measurements. It was shown that the skin cross-linking is dominant in low doses in accordance with the contact angle assessment. Conversely, the strong bulk degradation takes place at high doses. Similarly, the bulk cross-linking affects the mechanical tests as to enhance the stiffness at low doses, whereas strong degradation occurs at high doses that mainly arises from the strong bulk chain scission.

  17. Laser Desorption Postionization Mass Spectrometry of Antibiotic-Treated Bacterial Biofilms using Tunable Vacuum Ultraviolet Radiation

    SciTech Connect (OSTI)

    Gasper, Gerald L.; Takahashi, Lynelle K.; Zhou, Jia; Ahmed, Musahid; Moore, Jerry F.; Hanley, Luke

    2010-08-04

    Laser desorption postionization mass spectrometry (LDPI-MS) with 8.0 ? 12.5 eV vacuum ultraviolet synchrotron radiation is used to single photon ionize antibiotics andextracellular neutrals that are laser desorbed both neat and from intact bacterial biofilms. Neat antibiotics are optimally detected using 10.5 eV LDPI-MS, but can be ionized using 8.0 eV radiation, in agreement with prior work using 7.87 eV LDPI-MS. Tunable vacuum ultraviolet radiation also postionizes laser desorbed neutrals of antibiotics and extracellular material from within intact bacterial biofilms. Different extracellular material is observed by LDPI-MS in response to rifampicin or trimethoprim antibiotic treatment. Once again, 10.5 eV LDPI-MS displays the optimum trade-off between improved sensitivity and minimum fragmentation. Higher energy photons at 12.5 eV produce significant parent ion signal, but fragment intensity and other low mass ions are also enhanced. No matrix is added to enhance desorption, which is performed at peak power densities insufficient to directly produce ions, thus allowing observation of true VUV postionization mass spectra of antibiotic treated biofilms.

  18. Vacuum-Ultraviolet (VUV) Photoionization of Small Methanol and Methanol-Water Clusters

    SciTech Connect (OSTI)

    Kostko, Oleg; Belau, Leonid; Wilson, Kevin R.; Ahmed, Musahid

    2008-04-24

    In this work, we report on the vacuum-ultraviolet (VUV) photoionization of small methanol and methanol-water clusters. Clusters of methanol with water are generated via co-expansion of the gas phase constituents in a continuous supersonic jet expansion of methanol and water seeded in Ar. The resulting clusters are investigated by single photon ionization with tunable vacuum-ultraviolet synchrotron radiation and mass analyzed using reflectron mass spectrometry. Protonated methanol clusters of the form (CH3OH)nH+(n = 1-12) dominate the mass spectrum below the ionization energy of the methanol monomer. With an increase in water concentration, small amounts of mixed clusters of the form (CH3OH n(H2O)H+ (n = 2-11) are detected. The only unprotonated species observed in this work are the methanol monomer and dimer. Appearance energies are obtained from the photoionization efficiency (PIE) curves for CH3OH+, (CH3OH)2+, (CH3OH)nH+ (n = 1-9), and (CH3OH)n(H2O)H+ (n = 2-9) as a function of photon energy. With an increasein the water content in the molecular beam, there is an enhancement of photoionization intensity for the methanol dimer and protonated methanol monomer at threshold. These results are compared and contrasted to previous experimental observations.

  19. Defect-Enabled Electrical Current Leakage in Ultraviolet Light-Emitting Diodes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; Wierer, Jonathan; Smith, Michael L.; Biedermann, Laura

    2015-04-13

    The AlGaN materials system offers a tunable, ultra-wide bandgap that is exceptionally useful for high-power electronics and deep ultraviolet optoelectronics. Moseley et al. (pp. 723–726) investigate a structural defect known as an open-core threading dislocation or ''nanopipe'' that is particularly detrimental to devices that employ these materials. Furthermore, an AlGaN thin film was synthesized using metal-organic chemical-vapor deposition. Electrical current leakage is detected at a discrete point using a conductive atomic-force microscope (CAFM). However, no physical feature or abnormality at this location was visible by an optical microscope. The AlGaN thin film was then etched in hot phosphoric acid, andmore » the same location that was previously analyzed was revisited with the CAFM. The point that previously exhibited electrical current leakage had been decorated with a 1.1 μm wide hexagonal pit, which identified the site of electrical current leakage as a nanopipe and allows these defects to be easily observed by optical microscopy. Moreover, with this nanopipe identification and quantification strategy, the authors were able to correlate decreasing ultraviolet light-emitting diode optical output power with increasing nanopipe density.« less

  20. Viability of Cladosporium herbarum spores under 157 nm laser and vacuum ultraviolet irradiation, low temperature (10 K) and vacuum

    SciTech Connect (OSTI)

    Sarantopoulou, E. Stefi, A.; Kollia, Z.; Palles, D.; Cefalas, A. C.; Petrou, P. S.; Bourkoula, A.; Koukouvinos, G.; Kakabakos, S.; Velentzas, A. D.

    2014-09-14

    Ultraviolet photons can damage microorganisms, which rarely survive prolonged irradiation. In addition to the need for intact DNA, cell viability is directly linked to the functionality of the cell wall and membrane. In this work, Cladosporium herbarum spore monolayers exhibit high viability (7%) when exposed to 157 nm laser irradiation (412 kJm?) or vacuum-ultraviolet irradiation (110180 nm) under standard pressure and temperature in a nitrogen atmosphere. Spore viability can be determined by atomic-force microscopy, nano-indentation, mass, ?-Raman and attenuated reflectance Fourier-transform far-infrared spectroscopies and DNA electrophoresis. Vacuum ultraviolet photons cause molecular damage to the cell wall, but radiation resistance in spores arises from the activation of a photon-triggered signaling reaction, expressed via the exudation of intracellular substances, which, in combination with the low penetration depth of vacuum-ultraviolet photons, shields DNA from radiation. Resistance to phototoxicity under standard conditions was assessed, as was resistance to additional environmental stresses, including exposure in a vacuum, under different rates of change of pressure during pumping time and low (10 K) temperatures. Vacuum conditions were far more destructive to spores than vacuum-ultraviolet irradiation, and UV-B photons were two orders of magnitude more damaging than vacuum-ultraviolet photons. The viability of irradiated spores was also enhanced at 10 K. This work, in addition to contributing to the photonic control of the viability of microorganisms exposed under extreme conditions, including decontamination of biological warfare agents, outlines the basis for identifying bio-signaling in vivo using physical methodologies.

  1. Europium (Z=63) n=3-3 lines in the extreme ultraviolet: Na- through Si-like

    Office of Scientific and Technical Information (OSTI)

    ions (Journal Article) | SciTech Connect Europium (Z=63) n=3-3 lines in the extreme ultraviolet: Na- through Si-like ions Citation Details In-Document Search Title: Europium (Z=63) n=3-3 lines in the extreme ultraviolet: Na- through Si-like ions Authors: Trabert, E ; Beiersdorfer, P ; Hell, N ; Brown, G V Publication Date: 2014-08-22 OSTI Identifier: 1228017 Report Number(s): LLNL-JRNL-659246 DOE Contract Number: AC52-07NA27344 Resource Type: Journal Article Resource Relation: Journal Name:

  2. Devices useful for vacuum ultraviolet beam characterization including a movable stage with a transmission grating and image detector

    DOE Patents [OSTI]

    Gessner, Oliver; Kornilov, Oleg A; Wilcox, Russell B

    2013-10-29

    The invention provides for a device comprising an apparatus comprising (a) a transmission grating capable of diffracting a photon beam into a diffracted photon output, and (b) an image detector capable of detecting the diffracted photon output. The device is useful for measuring the spatial profile and diffraction pattern of a photon beam, such as a vacuum ultraviolet (VUV) beam.

  3. QUIET-SUN INTENSITY CONTRASTS IN THE NEAR-ULTRAVIOLET AS MEASURED FROM SUNRISE

    SciTech Connect (OSTI)

    Hirzberger, J.; Feller, A.; Riethmueller, T. L.; Schuessler, M.; Borrero, J. M.; Gandorfer, A.; Solanki, S. K.; Barthol, P.; Afram, N.; Unruh, Y. C.; Berdyugina, S. V.; Berkefeld, T.; Schmidt, W.; Bonet, J. A.; MartInez Pillet, V.; Knoelker, M.; Title, A. M.

    2010-11-10

    We present high-resolution images of the Sun in the near-ultraviolet spectral range between 214 nm and 397 nm as obtained from the first science flight of the 1 m SUNRISE balloon-borne solar telescope. The quiet-Sun rms intensity contrasts found in this wavelength range are among the highest values ever obtained for quiet-Sun solar surface structures-up to 32.8% at a wavelength of 214 nm. We compare the rms contrasts obtained from the observational data with theoretical intensity contrasts obtained from numerical magnetohydrodynamic simulations. For 388 nm and 312 nm the observations agree well with the numerical simulations whereas at shorter wavelengths discrepancies between observed and simulated contrasts remain.

  4. Ultraviolet stimulated electron source for use with low energy plasma instrument calibration

    SciTech Connect (OSTI)

    Henderson, Kevin; Harper, Ron; Funsten, Herb; MacDonald, Elizabeth [Space Science and Applications, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2012-07-15

    We have developed and demonstrated a versatile, compact electron source that can produce a mono-energetic electron beam up to 50 mm in diameter from 0.1 to 30 keV with an energy spread of <10 eV. By illuminating a metal cathode plate with a single near ultraviolet light emitting diode, a spatially uniform electron beam with 15% variation over 1 cm{sup 2} can be generated. A uniform electric field in front of the cathode surface accelerates the electrons into a beam with an angular divergence of <1 Degree-Sign at 1 keV. The beam intensity can be controlled from 10 to 10{sup 9} electrons cm{sup -2} s{sup -1}.

  5. Ultraviolet Absorption Spectrum of Malonaldehyde in Water Is Dominated by Solvent-Stabilized Conformations

    SciTech Connect (OSTI)

    Xu, Xuefei; Zheng, Jingjing; Truhlar, Donald G.

    2015-07-01

    Free energy calculations for eight enol isomers of malonaldehyde (MA) and simulation of the ultraviolet (UV) absorption spectrum in both the gas phase and water (pH = 3, where the molecule exists in neutral undeprotonated form) show that in water the two s-trans nonchelated enol conformers of MA become thermodynamically more stable than the internally hydrogen-bonded (chelated enol) conformer (CE). The pure CE conformer in water has a slightly red-shifted UV spectrum with respect to that in the gas phase, but the blue-shifted spectrum observed in water at pH 3 is dominated by solvent-stabilized conformations that have negligible populations in the gas phase. Density functional calculations with the solvation model based on density (SMD) and an ensemble-averaged vertical excitation model explain the experimental observations in detail.

  6. Cluster beam targets for laser plasma extreme ultraviolet and soft x-ray sources

    DOE Patents [OSTI]

    Kublak, G.D.; Richardson, M.C.

    1996-11-19

    Method and apparatus for producing extreme ultraviolet (EUV) and soft x-ray radiation from an ultra-low debris plasma source are disclosed. Targets are produced by the free jet expansion of various gases through a temperature controlled nozzle to form molecular clusters. These target clusters are subsequently irradiated with commercially available lasers of moderate intensity (10{sup 11}--10{sup 12} watts/cm{sup 2}) to produce a plasma radiating in the region of 0.5 to 100 nanometers. By appropriate adjustment of the experimental conditions the laser focus can be moved 10--30 mm from the nozzle thereby eliminating debris produced by plasma erosion of the nozzle. 5 figs.

  7. Enhancement of laser plasma extreme ultraviolet emission by shockwave-laser interaction

    SciTech Connect (OSTI)

    Bruijn, Rene de; Koshelev, Konstantin N.; Zakharov, Serguei V.; Novikov, Vladimir G.; Bijkerk, Fred

    2005-04-15

    A double laser pulse heating scheme has been applied to generate plasmas with enhanced emission in the extreme ultraviolet (EUV). The plasmas were produced by focusing two laser beams (prepulse and main pulse) with a small spatial separation between the foci on a xenon gas jet target. Prepulses with ps-duration were applied to obtain high shockwave densities, following indications of earlier published results obtained using ns prepulses. EUV intensities around 13.5 nm and in the range 5-20 nm were recorded, and a maximum increase in intensity exceeding 2 was measured at an optimal delay of 140 ns between prepulse and main pulse. The gain in intensity is explained by the interaction of the shockwave produced by the prepulse with the xenon in the beam waist of the main pulse. Extensive simulation was done using the radiative magnetohydrodynamic code Z{sup *}.

  8. Far-ultraviolet observations of comet C/2001 Q4 (NEAT) with FIMS/SPEAR

    SciTech Connect (OSTI)

    Lim, Y.-M.; Min, K.-W.; Feldman, P. D.; Han, W.; Edelstein, J.

    2014-02-01

    We present the results of far-ultraviolet observations of comet C/2001 Q4 (NEAT) that were made with the Far-Ultraviolet Imaging Spectrograph on board the Korean satellite STSAT-1. The observations were conducted in two campaigns during its perihelion approach between 2004 May 8 and 15. Based on the scanning mode observations in the wavelength band of 1400-1700 , we have constructed an image of the comet with an angular size of 55, which corresponds to the central coma region. Several important fluorescence emission lines were detected including S I multiplets at 1429 and 1479 , C I multiplets at 1561 and 1657 , and the CO A{sup 1}?-X{sup 1}?{sup +} Fourth Positive system; we have estimated the production rates of the corresponding species from the fluxes of these emission lines. The estimated production rate of CO was Q {sub CO} = (2.65 0.63) 10{sup 28} s{sup 1}, which is 6.2%-7.4% of the water production rate and is consistent with earlier predictions. The average carbon production rate was estimated to be Q{sub C} = ?1.59 10{sup 28} s{sup 1}, which is ?60% of the CO production rate. However, the observed carbon profile was steeper than that predicted using the two-component Haser model in the inner coma region, while it was consistent with the model in the outer region. The average sulfur production rate was Q{sub S} = (4.031.03) 10{sup 27} s{sup 1}, which corresponds to ?1% of the water production rate.

  9. THE HIGH-RESOLUTION EXTREME-ULTRAVIOLET SPECTRUM OF N{sub 2} BY ELECTRON IMPACT

    SciTech Connect (OSTI)

    Heays, A. N.; Ajello, J. M.; Aguilar, A.; Lewis, B. R.; Gibson, S. T.

    2014-04-01

    We have analyzed high-resolution (FWHM = 0.2 ) extreme-ultraviolet (EUV, 800-1350 ) laboratory emission spectra of molecular nitrogen excited by an electron impact at 20 and 100 eV under (mostly) optically thin, single-scattering experimental conditions. A total of 491 emission features were observed from N{sub 2} electronic-vibrational transitions and atomic N I and N II multiplets and their emission cross sections were measured. Molecular emission was observed at vibrationally excited ground-state levels as high as v'' = 17, from the a {sup 1}? {sub g} , b {sup 1}? {sub u} , and b'{sup 1}? {sub u} {sup +} excited valence states and the Rydberg series c'{sub n} {sub +1} {sup 1}? {sub u} {sup +}, c{sub n} {sup 1}? {sub u} , and o{sub n} {sup 1}? {sub u} for n between 3 and 9. The frequently blended molecular emission bands were disentangled with the aid of a sophisticated and predictive quantum-mechanical model of excited states that includes the strong coupling between valence and Rydberg electronic states and the effects of predissociation. Improved model parameters describing electronic transition moments were obtained from the experiment and allowed for a reliable prediction of the vibrationally summed electronic emission cross section, including an extrapolation to unobserved emission bands and those that are optically thick in the experimental spectra. Vibrationally dependent electronic excitation functions were inferred from a comparison of emission features following 20 and 100 eV electron-impact collisional excitation. The electron-impact-induced fluorescence measurements are compared with Cassini Ultraviolet Imaging Spectrograph observations of emissions from Titan's upper atmosphere.

  10. CHARACTERIZING ULTRAVIOLET AND INFRARED OBSERVATIONAL PROPERTIES FOR GALAXIES. I. INFLUENCES OF DUST ATTENUATION AND STELLAR POPULATION AGE

    SciTech Connect (OSTI)

    Mao Yewei; Kong Xu [Center for Astrophysics, University of Science and Technology of China, Hefei 230026 (China); Kennicutt, Robert C. Jr. [Institute of Astronomy, University of Cambridge, Madingley Road, Cambridge, CB3 0HA (United Kingdom); Hao, Cai-Na [Tianjin Astrophysics Center, Tianjin Normal University, Tianjin 300387 (China); Zhou Xu, E-mail: owen81@mail.ustc.edu.cn, E-mail: xkong@ustc.edu.cn [National Astronomical Observatories, Chinese Academy of Sciences, Beijing 100012 (China)

    2012-09-20

    The correlation between infrared-to-ultraviolet luminosity ratio and ultraviolet color (or ultraviolet spectral slope), i.e., the IRX-UV (or IRX-{beta}) relation, found in studies of starburst galaxies is a prevalent recipe for correcting extragalactic dust attenuation. Considerable dispersion in this relation discovered for normal galaxies, however, complicates its usability. In order to investigate the cause of the dispersion and to have a better understanding of the nature of the IRX-UV relation, in this paper, we select five nearby spiral galaxies, and perform spatially resolved studies on each of the galaxies, with a combination of ultraviolet and infrared imaging data. We measure all positions within each galaxy and divide the extracted regions into young and evolved stellar populations. By means of this approach, we attempt to discover separate effects of dust attenuation and stellar population age on the IRX-UV relation for individual galaxies. In this work, in addition to dust attenuation, stellar population age is interpreted to be another parameter in the IRX-UV function, and the diversity of star formation histories is suggested to disperse the age effects. At the same time, strong evidence shows the need for more parameters in the interpretation of observational data, such as variations in attenuation/extinction law. Fractional contributions of different components to the integrated luminosities of the galaxies suggest that the integrated measurements of these galaxies, which comprise different populations, would weaken the effect of the age parameter on IRX-UV diagrams. The dependence of the IRX-UV relation on luminosity and radial distance in galaxies presents weak trends, which offers an implication of selective effects. The two-dimensional maps of the UV color and the infrared-to-ultraviolet ratio are displayed and show a disparity in the spatial distributions between the two galaxy parameters, which offers a spatial interpretation of the scatter in the IRX-UV relation.

  11. Interferometric at-wavelength flare characterization of EUV optical systems

    DOE Patents [OSTI]

    Naulleau, Patrick P. (Oakland, CA); Goldberg, Kenneth Alan (Berkeley, CA)

    2001-01-01

    The extreme ultraviolet (EUV) phase-shifting point diffraction interferometer (PS/PDI) provides the high-accuracy wavefront characterization critical to the development of EUV lithography systems. Enhancing the implementation of the PS/PDI can significantly extend its spatial-frequency measurement bandwidth. The enhanced PS/PDI is capable of simultaneously characterizing both wavefront and flare. The enhanced technique employs a hybrid spatial/temporal-domain point diffraction interferometer (referred to as the dual-domain PS/PDI) that is capable of suppressing the scattered-reference-light noise that hinders the conventional PS/PDI. Using the dual-domain technique in combination with a flare-measurement-optimized mask and an iterative calculation process for removing flare contribution caused by higher order grating diffraction terms, the enhanced PS/PDI can be used to simultaneously measure both figure and flare in optical systems.

  12. Electrostatic particle trap for ion beam sputter deposition

    DOE Patents [OSTI]

    Vernon, Stephen P. (Pleasanton, CA); Burkhart, Scott C. (Livermore, CA)

    2002-01-01

    A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate. The electrostatic charged particle trap enables prevention of charged particles from being deposited on the substrate thereby enabling the deposition of extremely low defect density films, such as required for reflective masks of an extreme ultraviolet lithography (EUVL) system.

  13. The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

    SciTech Connect (OSTI)

    Gaddy, BE; Bryan, Z; Bryan, I; Xie, JQ; Dalmau, R; Moody, B; Kumagai, Y; Nagashima, T; Kubota, Y; Kinoshita, T; Koukitu, A; Kirste, R; Sitar, Z; Collazo, R; Irving, DL

    2014-05-19

    Co-doping AlN crystals with Si is found to suppress the unwanted 4.7 eV (265 nm) deep ultraviolet absorption associated with isolated carbon acceptors common in materials grown by physical vapor transport. Density functional theory calculations with hybrid functionals demonstrate that silicon forms a stable nearest-neighbor defect complex with carbon. This complex is predicted to absorb at 5.5 eV and emit at or above 4.3 eV. Absorption and photoluminescence measurements of co-doped samples confirm the presence of the predicted C-N-Si-Al complex absorption and emission peaks and significant reduction of the 4.7 eV absorption. Other sources of deep ultraviolet absorption in AlN are also discussed. (C) 2014 AIP Publishing LLC.

  14. Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode

    SciTech Connect (OSTI)

    Kang, Jang-Won; Choi, Yong-Seok; Goo Kang, Chang; Hun Lee, Byoung [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Kim, Byeong-Hyeok [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407 (United States); Park, Seong-Ju, E-mail: sjpark@gist.ac.kr [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

    2014-02-03

    We report on ultraviolet emission from a multi-layer graphene (MLG)/MgZnO/ZnO light-emitting diodes (LED). The p-type MLG and MgZnO in the MLG/MgZnO/ZnO LED are used as transparent hole injection and electron blocking layers, respectively. The current-voltage characteristics of the MLG/MgZnO/ZnO LED show that current transport is dominated by tunneling processes in the MgZnO barrier layer under forward bias conditions. The holes injected from p-type MLG recombine efficiently with the electrons accumulated in ZnO, and the MLG/MgZnO/ZnO LED shows strong ultraviolet emission from the band edge of ZnO and weak red-orange emission from the deep levels of ZnO.

  15. Removal of pollutant compounds from water supplies using ozone, ultraviolet light, and a counter, current packed column. Master's thesis

    SciTech Connect (OSTI)

    Kelly, E.L.

    1991-01-01

    Many water pollutants are determined to be carcinogenic and often appear in very low concentrations and still pose a health risk. Conventional water treatment processes cannot remove these contaminants and there is a great demand for the development of alternative removal technologies. The use of ozone and ultraviolet light in a counter current packed column could prove to be an effective treatment process to remove these contaminants.

  16. Ultraviolet germicidal irradiation and its effects on elemental distributions in mouse embryonic fibroblast cells in x-ray fluorescence microanalysis

    SciTech Connect (OSTI)

    Jin, Qiaoling; Vogt, Stefan; Lai, Barry; Chen, Si; Finney, Lydia; Gleber, Sophie-Charlotte; Ward, Jesse; Deng, Junjing; Mak, Rachel; Moonier, Nena; Jacobsen, Chris; Brody, James P.

    2015-02-23

    Rapidly-frozen hydrated (cryopreserved) specimens combined with cryo-scanning x-ray fluorescence microscopy provide an ideal approach for investigating elemental distributions in biological cells and tissues. However, because cryopreservation does not deactivate potentially infectious agents associated with Risk Group 2 biological materials, one must be concerned with contamination of expensive and complicated cryogenic x-ray microscopes when working with such materials. We employed ultraviolet germicidal irradiation to decontaminate previously cryopreserved cells under liquid nitrogen, and then investigated its effects on elemental distributions under both frozen hydrated and freeze dried states with x-ray fluorescence microscopy. We show that the contents and distributions of most biologically important elements remain nearly unchanged when compared with non-ultraviolet-irradiated counterparts, even after multiple cycles of ultraviolet germicidal irradiation and cryogenic x-ray imaging. This provides a potential pathway for rendering Risk Group 2 biological materials safe for handling in multiuser cryogenic x-ray microscopes without affecting the fidelity of the results.

  17. Ultraviolet germicidal irradiation and its effects on elemental distributions in mouse embryonic fibroblast cells in x-ray fluorescence microanalysis

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jin, Qiaoling; Vogt, Stefan; Lai, Barry; Chen, Si; Finney, Lydia; Gleber, Sophie-Charlotte; Ward, Jesse; Deng, Junjing; Mak, Rachel; Moonier, Nena; et al

    2015-02-23

    Rapidly-frozen hydrated (cryopreserved) specimens combined with cryo-scanning x-ray fluorescence microscopy provide an ideal approach for investigating elemental distributions in biological cells and tissues. However, because cryopreservation does not deactivate potentially infectious agents associated with Risk Group 2 biological materials, one must be concerned with contamination of expensive and complicated cryogenic x-ray microscopes when working with such materials. We employed ultraviolet germicidal irradiation to decontaminate previously cryopreserved cells under liquid nitrogen, and then investigated its effects on elemental distributions under both frozen hydrated and freeze dried states with x-ray fluorescence microscopy. We show that the contents and distributions of most biologicallymore » important elements remain nearly unchanged when compared with non-ultraviolet-irradiated counterparts, even after multiple cycles of ultraviolet germicidal irradiation and cryogenic x-ray imaging. This provides a potential pathway for rendering Risk Group 2 biological materials safe for handling in multiuser cryogenic x-ray microscopes without affecting the fidelity of the results.« less

  18. Resonantly enhanced method for generation of tunable, coherent vacuum-ultraviolet radiation

    DOE Patents [OSTI]

    Glownia, J.H.; Sander, R.K.

    1982-06-29

    Carbon Monoxide vapor is used to generate coherent, tunable vacuum ultraviolet radiation by third-harmonic generation using a single tunable dye laser. The presence of a nearby electronic level resonantly enhances the nonlinear susceptibility of this molecule allowing efficient generation of the vuv light at modest pump laser intensities, thereby reducing the importance of a six-photon multiple-photon ionization process which is also resonantly enhanced by the same electronic level but no higher order. By choosing the pump radiation wavelength to be of shorter wavelength than individual vibronic levels used to extend tunability stepwise from 154.4 to 124.6 nm, and the intensity to be low enough, multiple-photon ionization can be eliminated. Excitation spectra of the third-harmonic emission output exhibit shifts to shorter wavelength and broadening with increasing CO pressure due to phase matching effects. Increasing the carbon monoxide pressure, therefore, allows the substantial filling in of gaps arising from the stepwise tuning thereby providing almost continuous tunability over the quoted range of wavelength emitted.

  19. THE NEAR-ULTRAVIOLET LUMINOSITY FUNCTION OF YOUNG, EARLY M-TYPE DWARF STARS

    SciTech Connect (OSTI)

    Ansdell, Megan; Baranec, Christoph; Gaidos, Eric; Mann, Andrew W.; Lpine, Sebastien; James, David; Buccino, Andrea; Mauas, Pablo; Petrucci, Romina; Law, Nicholas M.; Riddle, Reed

    2015-01-01

    Planets orbiting within the close-in habitable zones of M dwarf stars will be exposed to elevated high-energy radiation driven by strong magnetohydrodynamic dynamos during stellar youth. Near-ultraviolet (NUV) irradiation can erode and alter the chemistry of planetary atmospheres, and a quantitative description of the evolution of NUV emission from M dwarfs is needed when modeling these effects. We investigated the NUV luminosity evolution of early M-type dwarfs by cross-correlating the Lpine and Gaidos catalog of bright M dwarfs with the Galaxy Evolution Explorer (GALEX) catalog of NUV (1771-2831 ) sources. Of the 4805 sources with GALEX counterparts, 797 have NUV emission significantly (>2.5?) in excess of an empirical basal level. We inspected these candidate active stars using visible-wavelength spectra, high-resolution adaptive optics imaging, time-series photometry, and literature searches to identify cases where the elevated NUV emission is due to unresolved background sources or stellar companions; we estimated the overall occurrence of these ''false positives'' (FPs) as ?16%. We constructed an NUV luminosity function that accounted for FPs, detection biases of the source catalogs, and GALEX upper limits. We found the NUV luminosity function to be inconsistent with predictions from a constant star-formation rate and simplified age-activity relation defined by a two-parameter power law.

  20. Resonantly enhanced method for generation of tunable, coherent vacuum ultraviolet radiation

    DOE Patents [OSTI]

    Glownia, James H. (Los Alamos, NM); Sander, Robert K. (Los Alamos, NM)

    1985-01-01

    Carbon Monoxide vapor is used to generate coherent, tunable vacuum ultraviolet radiation by third-harmonic generation using a single tunable dye laser. The presence of a nearby electronic level resonantly enhances the nonlinear susceptibility of this molecule allowing efficient generation of the vuv light at modest pump laser intensities, thereby reducing the importance of a six-photon multiple-photon ionization process which is also resonantly enhanced by the same electronic level but to higher order. By choosing the pump radiation wavelength to be of shorter wavelength than individual vibronic levels used to extend tunability stepwise from 154.4 to 124.6 nm, and the intensity to be low enough, multiple-photon ionization can be eliminated. Excitation spectra of the third-harmonic emission output exhibit shifts to shorter wavelength and broadening with increasing CO pressure due to phase matching effects. Increasing the carbon monoxide pressure, therefore, allows the substantial filling in of gaps arising from the stepwise tuning thereby providing almost continuous tunability over the quoted range of wavelength emitted.

  1. Control of the polarization of a vacuum-ultraviolet, high-gain, free-electron laser

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Allaria, Enrico; Diviacco, Bruno; Callegari, Carlo; Finetti, Paola; Mahieu, Benoît; Viefhaus, Jens; Zangrando, Marco; De Ninno, Giovanni; Lambert, Guillaume; Ferrari, Eugenio; et al

    2014-12-02

    The two single-pass, externally seeded free-electron lasers (FELs) of the FERMI user facility are designed around Apple-II-type undulators that can operate at arbitrary polarization in the vacuum ultraviolet-to-soft x-ray spectral range. Furthermore, within each FEL tuning range, any output wavelength and polarization can be set in less than a minute of routine operations. We report the first demonstration of the full output polarization capabilities of FERMI FEL-1 in a campaign of experiments where the wavelength and nominal polarization are set to a series of representative values, and the polarization of the emitted intense pulses is thoroughly characterized by three independentmore » instruments and methods, expressly developed for the task. The measured radiation polarization is consistently >90% and is not significantly spoiled by the transport optics; differing, relative transport losses for horizontal and vertical polarization become more prominent at longer wavelengths and lead to a non-negligible ellipticity for an originally circularly polarized state. The results from the different polarimeter setups validate each other, allow a cross-calibration of the instruments, and constitute a benchmark for user experiments.« less

  2. Extreme ultraviolet emission and confinement of tin plasmas in the presence of a magnetic field

    SciTech Connect (OSTI)

    Roy, Amitava E-mail: aroy@barc.gov.in; Murtaza Hassan, Syed; Harilal, Sivanandan S.; Hassanein, Ahmed; Endo, Akira; Mocek, Tomas

    2014-05-15

    We investigated the role of a guiding magnetic field on extreme ultraviolet (EUV) and ion emission from a laser produced Sn plasma for various laser pulse duration and intensity. For producing plasmas, planar slabs of pure Sn were irradiated with 1064?nm, Nd:YAG laser pulses with varying pulse duration (515?ns) and intensity. A magnetic trap was fabricated with the use of two neodymium permanent magnets which provided a magnetic field strength ?0.5?T along the plume expansion direction. Our results indicate that the EUV conversion efficiency do not depend significantly on applied axial magnetic field. Faraday Cup ion analysis of Sn plasma show that the ion flux reduces by a factor of ?5 with the application of an axial magnetic field. It was found that the plasma plume expand in the lateral direction with peak velocity measured to be ?1.2?cm/?s and reduced to ?0.75?cm/?s with the application of an axial magnetic field. The plume expansion features recorded using fast photography in the presence and absence of 0.5?T axial magnetic field are simulated using particle-in-cell code. Our simulation results qualitatively predict the plasma behavior.

  3. INTENSITY ENHANCEMENT OF OVI ULTRAVIOLET EMISSION LINES IN SOLAR SPECTRA DUE TO OPACITY

    SciTech Connect (OSTI)

    Keenan, F. P.; Mathioudakis, M.; Doyle, J. G.; Madjarska, M. S.; Rose, S. J.; Bowler, L. A.; Britton, J.; McCrink, L.

    2014-04-01

    Opacity is a property of many plasmas. It is normally expected that if an emission line in a plasma becomes optically thick, then its intensity ratio to that of another transition that remains optically thin should decrease. However, radiative transfer calculations undertaken both by ourselves and others predict that under certain conditions the intensity ratio of an optically thick to an optically thin line can show an increase over the optically thin value, indicating an enhancement in the former. These conditions include the geometry of the emitting plasma and its orientation to the observer. A similar effect can take place between lines of differing optical depths. While previous observational studies have focused on stellar point sources, here we investigate the spatially resolved solar atmosphere using measurements of the I(1032 )/I(1038 ) intensity ratio of OVI in several regions obtained with the Solar Ultraviolet Measurements of Emitted Radiation instrument on board the Solar and Heliospheric Observatory satellite. We find several I(1032 )/I(1038 ) ratios observed on the disk to be significantly larger than the optically thin value of 2.0, providing the first detection (to our knowledge) of intensity enhancement in the ratio arising from opacity effects in the solar atmosphere. The agreement between observation and theory is excellent and confirms that the OVI emission originates from a slab-like geometry in the solar atmosphere, rather than from cylindrical structures.

  4. High-performance deep ultraviolet photodetectors based on ZnO quantum dot assemblies

    SciTech Connect (OSTI)

    Xu, Xiaoyong; Xu, Chunxiang E-mail: jghu@yzu.edu.cn; Hu, Jingguo E-mail: jghu@yzu.edu.cn

    2014-09-14

    A high-performance ZnO quantum dots (QDs)-based ultraviolet (UV) photodetector has been successfully fabricated via the self-assembly of QDs on the Au interdigital electrode. The broadened band gap in ZnO QDs makes the device has the highly selective response for the deep UV detection. The unique QD-QD junction barriers similar to back-to-back Schottky barriers dominate the conductance of the QD network and the UV light-induced barrier-height modulation plays a crucial role in enhancing the photoresponsivity and the response speed. Typically, the as-fabricated device exhibits the fast response and recovery times of within 1 s, the deep UV selectivity of less than 340 nm, and the stable repeatability with on/off current ratio over 10, photoresponsivity of 5.0410A/W, and photocurrent gain of 1.910, demonstrating that the ZnO QD network is a superior building block for deep UV photodetectors.

  5. Nanostructured High Performance Ultraviolet and Blue Light Emitting Diodes for Solid State Lighting

    SciTech Connect (OSTI)

    Arto V. Nurmikko; Jung Han

    2005-09-30

    We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications. Accomplishments in the second 12 month contract period include (i) new means of synthesizing AlGaN and InN quantum dots by droplet heteroepitaxy, (ii) synthesis of AlGaInN nanowires as building blocks for GaN-based microcavity devices, (iii) progress towards direct epitaxial alignment of the dense arrays of nanowires, (iv) observation and measurements of stimulated emission in dense InGaN nanopost arrays, (v) design and fabrication of InGaN photonic crystal emitters, and (vi) observation and measurements of enhanced fluorescence from coupled quantum dot and plasmonic nanostructures. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

  6. Vacuum-ultraviolet (VUV) photoionization of small methanol and methanol-water clusters

    SciTech Connect (OSTI)

    Ahmed, Musahid; Ahmed, Musahid; Wilson, Kevin R.; Belau, Leonid; Kostko, Oleg

    2008-05-12

    In this work we report on thevacuum-ultraviolet (VUV) photoionization of small methanol and methanol-water clusters. Clusters of methanol with water are generated via co-expansion of the gas phase constituents in a continuous supersonic jet expansion of methanol and water seeded in Ar. The resulting clusters are investigated by single photon ionization with tunable vacuumultraviolet synchrotron radiation and mass analyzed using reflectron mass spectrometry. Protonated methanol clusters of the form (CH3OH)nH + (n=1-12) dominate the mass spectrum below the ionization energy of the methanol monomer. With an increase in water concentration, small amounts of mixed clusters of the form (CH3OH)n(H2O)H + (n=2-11) are detected. The only unprotonated species observed in this work are the methanol monomer and dimer. Appearance energies are obtained from the photoionization efficiency (PIE) curves for CH3OH +, (CH 3OH)2 +, (CH3OH)nH + (n=1-9), and (CH 3OH)n(H2O)H + (n=2-9 ) as a function of photon energy. With an increase in the water content in the molecular beam, there is an enhancement of photoionization intensity for methanol dimer and protonated methanol monomer at threshold. These results are compared and contrasted to previous experimental observations.

  7. Distinguishing Unfolding and Functional Conformational Transitions of Calmodulin Using Ultraviolet Resonance Raman Spectroscopy

    SciTech Connect (OSTI)

    Jones, Eric M.; Balakrishnan, G.; Squier, Thomas C.; Spiro, Thomas

    2014-06-14

    Calmodulin (CaM) is a ubiquitous moderator protein for calcium signaling in all eukaryotic cells. This small calcium-binding protein exhibits a broad range of structural transitions, including domain opening and folding-unfolding, that allow it to recognize a wide variety of binding partners in vivo. While the static structures of CaM associated with its various binding activities are fairly well known, it has been challenging to examine the dynamics of transition between these structures in real-time, due to a lack of suitable spectroscopic probes of CaM structure. In this paper, we examine the potential of ultraviolet resonance Raman (UVRR) spectroscopy for clarifying the nature of structural transitions in CaM. We find that the UVRR spectral change (with 229 nm excitation) due to thermal unfolding of CaM is qualitatively different from that associated with opening of the C-terminal domain in response to Ca2+ binding. This spectral difference is entirely due to differences in teritary contacts at the inter-domain tyrosine residue Tyr138, toward which other spectroscopic methods are not sensitive. We conclude that UVRR is ideally suited to identifying the different types of structural transitions in CaM and other proteins with conformation-sensitive tyrosine residues, opening a path to time-resolved studies of CaM dynamics using Raman spectroscopy.

  8. NANOSTRUCTURED HIGH PERFORMANCE ULTRAVIOLET AND BLUE LIGHT EMITTING DIODES FOR SOLID STATE LIGHTING

    SciTech Connect (OSTI)

    Arto V. Nurmikko; Jung Han

    2004-10-01

    We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications. Accomplishments in the first 12 month contract period include (1) new means of synthesizing zero- and one-dimensional GaN nanostructures, (2) establishment of the building blocks for making GaN-based microcavity devices, and (3) demonstration of top-down approach to nano-scale photonic devices for enhanced spontaneous emission and light extraction. These include a demonstration of eight-fold enhancement of the external emission efficiency in new InGaN QW photonic crystal structures. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

  9. Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED)

    SciTech Connect (OSTI)

    Kurose, N. Aoyagi, Y.; Shibano, K.; Araki, T.

    2014-02-15

    A vertical ultraviolet (UV) light-emitting diode (LED) that does not require substrate removal is developed. Spontaneous via holes are formed in n-AlN layer epitaxially grown on a high conductive n+Si substrate and the injected current flows directly from the p-electrode to high doped n{sup +} Si substrate through p-AlGaN, multi-quantum wells, n-AlGaN and spontaneous via holes in n-AlN. The spontaneous via holes were formed by controlling feeding-sequence of metal-organic gas sources and NH{sub 3} and growth temperature in MOCVD. The via holes make insulating n-AlN to be conductive. We measured the current-voltage, current-light intensity and emission characteristics of this device. It exhibited a built-in voltage of 3.8 V and emission was stated at 350 nm from quantum wells with successive emission centered at 400 nm. This UV LED can be produced, including formation of n and p electrodes, without any resist process.

  10. Control of the polarization of a vacuum-ultraviolet, high-gain, free-electron laser

    SciTech Connect (OSTI)

    Allaria, Enrico; Diviacco, Bruno; Callegari, Carlo; Finetti, Paola; Mahieu, Benot; Viefhaus, Jens; Zangrando, Marco; De Ninno, Giovanni; Lambert, Guillaume; Ferrari, Eugenio; Buck, Jens; Ilchen, Markus; Vodungbo, Boris; Mahne, Nicola; Svetina, Cristian; Spezzani, Carlo; Di Mitri, Simone; Penco, Giuseppe; Trov, Mauro; Fawley, William M.; Rebernik, Primoz R.; Gauthier, David; Grazioli, Cesare; Coreno, Marcello; Ressel, Barbara; Kivimki, Antti; Mazza, Tommaso; Glaser, Leif; Scholz, Frank; Seltmann, Joern; Gessler, Patrick; Grnert, Jan; De Fanis, Alberto; Meyer, Michael; Knie, Andr; Moeller, Stefan P.; Raimondi, Lorenzo; Capotondi, Flavio; Pedersoli, Emanuele; Plekan, Oksana; Danailov, Miltcho B.; Demidovich, Alexander; Nikolov, Ivaylo; Abrami, Alessandro; Gautier, Julien; Lning, Jan; Zeitoun, Philippe; Giannessi, Luca

    2014-12-02

    The two single-pass, externally seeded free-electron lasers (FELs) of the FERMI user facility are designed around Apple-II-type undulators that can operate at arbitrary polarization in the vacuum ultraviolet-to-soft x-ray spectral range. Furthermore, within each FEL tuning range, any output wavelength and polarization can be set in less than a minute of routine operations. We report the first demonstration of the full output polarization capabilities of FERMI FEL-1 in a campaign of experiments where the wavelength and nominal polarization are set to a series of representative values, and the polarization of the emitted intense pulses is thoroughly characterized by three independent instruments and methods, expressly developed for the task. The measured radiation polarization is consistently >90% and is not significantly spoiled by the transport optics; differing, relative transport losses for horizontal and vertical polarization become more prominent at longer wavelengths and lead to a non-negligible ellipticity for an originally circularly polarized state. The results from the different polarimeter setups validate each other, allow a cross-calibration of the instruments, and constitute a benchmark for user experiments.

  11. Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

    SciTech Connect (OSTI)

    Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep

    2013-01-28

    We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.

  12. Effective interface state effects in hydrogenated amorphous-crystalline silicon heterostructures using ultraviolet laser photocarrier radiometry

    SciTech Connect (OSTI)

    Melnikov, A.; Mandelis, A.; Halliop, B.; Kherani, N. P.

    2013-12-28

    Ultraviolet photocarrier radiometry (UV-PCR) was used for the characterization of thin-film (nanolayer) intrinsic hydrogenated amorphous silicon (i-a-Si:H) on c-Si. The small absorption depth (approximately 10?nm at 355?nm laser excitation) leads to strong influence of the nanolayer parameters on the propagation and recombination of the photocarrier density wave (CDW) within the layer and the substrate. A theoretical PCR model including the presence of effective interface carrier traps was developed and used to evaluate the transport parameters of the substrate c-Si as well as those of the i-a-Si:H nanolayer. Unlike conventional optoelectronic characterization methods such as photoconductance, photovoltage, and photoluminescence, UV-PCR can be applied to more complete quantitative characterization of a-Si:H/c-Si heterojunction solar cells, including transport properties and defect structures. The quantitative results elucidate the strong effect of a front-surface passivating nanolayer on the transport properties of the entire structure as the result of effective a-Si:H/c-Si interface trap neutralization through occupation. A further dramatic improvement of those properties with the addition of a back-surface passivating nanolayer is observed and interpreted as the result of the interaction of the increased excess bulk CDW with, and more complete occupation and neutralization of, effective front interface traps.

  13. The WFPC2 ultraviolet survey: The blue straggler population in NGC 5824

    SciTech Connect (OSTI)

    Sanna, N.; Dalessandro, E.; Ferraro, F. R.; Lanzoni, B.; Miocchi, P.

    2014-01-01

    We have used a combination of high-resolution Hubble Space Telescope Wide Field Planetary Camera 2 and wide-field ground-based observations, in ultraviolet and optical bands, to study the blue straggler star population of the massive outer halo globular cluster NGC 5824 over its entire radial extent. We have computed the center of the cluster and constructed the radial density profile from detailed star counts. The profile is well reproduced by a Wilson model with a small core (r{sub c} ? 4.''4) and a concentration parameter c ? 2.74. We also present the first age determination for this cluster. From a comparison with isochrones, we find t = 13 0.5 Gyr. We discuss this result in the context of the observed age-metallicity relation of Galactic globular clusters. A total of 60 bright blue stragglers has been identified. Their radial distribution is found to be bimodal, with a central peak, a well-defined minimum at r ? 20'', and an upturn at large radii. In the framework of the dynamical clock recently defined by Ferraro et al., this feature suggests that NGC 5824 is a cluster of intermediate dynamical age.

  14. On the role of chemical reactions in initiating ultraviolet laser ablation in poly(methyl methacrylate)

    SciTech Connect (OSTI)

    Prasad, Manish; Conforti, Patrick F.; Garrison, Barbara J.

    2007-05-15

    The role of chemical reactions is investigated versus the thermal and mechanical processes occurring in a polymer substrate during irradiation by a laser pulse and subsequent ablation. Molecular dynamics simulations with an embedded Monte Carlo based reaction scheme were used to study ultraviolet ablation of poly(methyl methacrylate) at 157 nm. We discuss the onset of ablation, the mechanisms leading to ablation, and the role of stress relaxation of the polymer matrix during ablation. Laser induced heating and chemical decomposition of the polymer substrate are considered as ablation pathways. It is shown that heating the substrate can set off ablation via mechanical failure of the material only for very short laser pulses. For longer pulses, the mechanism of ejection is thermally driven limited by the critical number of bonds broken in the substrate. Alternatively, if the photon energy goes towards direct bond breaking, it initiates chemical reactions, polymer unzipping, and formation of gaseous products, leading to a nearly complete decomposition of the top layers of substrates. The ejection of small molecules has a hollowing out effect on the weakly connected substrates which can lead to lift-off of larger chunks. Excessive pressure buildup upon the creation of gaseous molecules does not lead to enhanced yield. The larger clusters are thermally ejected, and an entrainment of larger polymer fragments in gaseous molecules is not observed.

  15. THE EXTREME ULTRAVIOLET DEFICIT AND MAGNETICALLY ARRESTED ACCRETION IN RADIO-LOUD QUASARS

    SciTech Connect (OSTI)

    Punsly, Brian

    2014-12-20

    The Hubble Space Telescope composite quasar spectra presented in Telfer et al. show a significant deficit of emission in the extreme ultraviolet for the radio-loud component of the quasar population (RLQs) compared to the radio-quiet component of the quasar population. The composite quasar continuum emission between 1100 and ?580 is generally considered to be associated with the innermost regions of the accretion flow onto the central black hole. The deficit between 1100 and 580 in RLQs has a straightforward interpretation as a missing or a suppressed innermost region of local energy dissipation in the accretion flow. It is proposed that this can be the result of islands of large-scale magnetic flux in RLQs that are located close to the central black hole that remove energy from the accretion flow as Poynting flux (sometimes called magnetically arrested accretion). These magnetic islands are natural sites for launching relativistic jets. Based on the Telfer et al. data and the numerical simulations of accretion flows in Penna et al., the magnetic islands are concentrated between the event horizon and an outer boundary of <2.8 M (in geometrized units) for rapidly rotating black holes and <5.5 M for modestly rotating black holes.

  16. Narrowband filter radiometer for ground-based measurements of global ultraviolet solar irradiance and total ozone

    SciTech Connect (OSTI)

    Petkov, Boyan; Vitale, Vito; Tomasi, Claudio; Bonafe, Ubaldo; Scaglione, Salvatore; Flori, Daniele; Santaguida, Riccardo; Gausa, Michael; Hansen, Georg; Colombo, Tiziano

    2006-06-20

    The ultraviolet narrowband filter radiometer (UV-RAD) designed by the authors to take ground-based measurements of UV solar irradiance, total ozone, and biological dose rate is described, together with the main characteristics of the seven blocked filters mounted on it, all of which have full widths at half maxima that range 0.67 to 0.98 nm. We have analyzed the causes of cosine response and calibration errors carefully to define the corresponding correction terms, paying particular attention to those that are due to the spectral displacements of the filter transmittance peaks from the integer wavelength values. The influence of the ozone profile on the retrieved ozone at large solar zenith angles has also been examined by means of field measurements. The opportunity of carrying out nearly monochromatic irradiance measurements offered by the UV-RAD allowed us to improve the procedure usually followed to reconstruct the solar spectrum at the surface by fitting the computed results, using radiative transfer models with field measurements of irradiance. Two long-term comparison campaigns took place, showing that a mean discrepancy of+0.3% exists between the UV-RAD total ozone values and those given by the Brewer no. 63 spectroradiometer and that mean differences of+0.3% and-0.9% exist between the erythemal dose rates determined with the UV-RAD and those obtained with the Brewer no. 63 and the Brewer no. 104 spectroradiometers, respectively.

  17. Norathyriol Suppresses Skin Cancers Induced by Solar Ultraviolet Radiation by Targeting ERK Kinases

    SciTech Connect (OSTI)

    Li, Jixia; Malakhova, Margarita; Mottamal, Madhusoodanan; Reddy, Kanamata; Kurinov, Igor; Carper, Andria; Langfald, Alyssa; Oi, Naomi; Kim, Myoung Ok; Zhu, Feng; Sosa, Carlos P.; Zhou, Keyuan; Bode, Ann M.; Dong, Zigang

    2012-06-27

    Ultraviolet (UV) irradiation is the leading factor in the development of skin cancer, prompting great interest in chemopreventive agents for this disease. In this study, we report the discovery of norathyriol, a plant-derived chemopreventive compound identified through an in silico virtual screening of the Chinese Medicine Library. Norathyriol is a metabolite of mangiferin found in mango, Hypericum elegans, and Tripterospermum lanceolatum and is known to have anticancer activity. Mechanistic investigations determined that norathyriol acted as an inhibitor of extracellular signal-regulated kinase (ERK)1/2 activity to attenuate UVB-induced phosphorylation in mitogen-activated protein kinases signaling cascades. We confirmed the direct and specific binding of norathyriol with ERK2 through a cocrystal structural analysis. The xanthone moiety in norathyriol acted as an adenine mimetic to anchor the compound by hydrogen bonds to the hinge region of the protein ATP-binding site on ERK2. Norathyriol inhibited in vitro cell growth in mouse skin epidermal JB6 P+ cells at the level of G{sub 2}-M phase arrest. In mouse skin tumorigenesis assays, norathyriol significantly suppressed solar UV-induced skin carcinogenesis. Further analysis indicated that norathyriol mediates its chemopreventive activity by inhibiting the ERK-dependent activity of transcriptional factors AP-1 and NF-{kappa}B during UV-induced skin carcinogenesis. Taken together, our results identify norathyriol as a safe new chemopreventive agent that is highly effective against development of UV-induced skin cancer.

  18. ACTIVE REGION MOSS: DOPPLER SHIFTS FROM HINODE/EXTREME-ULTRAVIOLET IMAGING SPECTROMETER OBSERVATIONS

    SciTech Connect (OSTI)

    Tripathi, Durgesh [Inter-University Centre for Astronomy and Astrophysics, Pune University Campus, Pune 411007 (India); Mason, Helen E. [Department of Applied Mathematics and Theoretical Physics, University of Cambridge, Wilberforce Road, Cambridge CB3 0WA (United Kingdom); Klimchuk, James A. [NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States)

    2012-07-01

    Studying the Doppler shifts and the temperature dependence of Doppler shifts in moss regions can help us understand the heating processes in the core of the active regions. In this paper, we have used an active region observation recorded by the Extreme-ultraviolet Imaging Spectrometer (EIS) on board Hinode on 2007 December 12 to measure the Doppler shifts in the moss regions. We have distinguished the moss regions from the rest of the active region by defining a low-density cutoff as derived by Tripathi et al. in 2010. We have carried out a very careful analysis of the EIS wavelength calibration based on the method described by Young et al. in 2012. For spectral lines having maximum sensitivity between log T = 5.85 and log T = 6.25 K, we find that the velocity distribution peaks at around 0 km s{sup -1} with an estimated error of 4-5 km s{sup -1}. The width of the distribution decreases with temperature. The mean of the distribution shows a blueshift which increases with increasing temperature and the distribution also shows asymmetries toward blueshift. Comparing these results with observables predicted from different coronal heating models, we find that these results are consistent with both steady and impulsive heating scenarios. However, the fact that there are a significant number of pixels showing velocity amplitudes that exceed the uncertainty of 5 km s{sup -1} is suggestive of impulsive heating. Clearly, further observational constraints are needed to distinguish between these two heating scenarios.

  19. The formation of IRIS diagnostics. III. Near-ultraviolet spectra and images

    SciTech Connect (OSTI)

    Pereira, T. M. D.; Leenaarts, J.; De Pontieu, B.; Carlsson, M.; Uitenbroek, H. E-mail: jorritl@astro.uio.no E-mail: mats.carlsson@astro.uio.no

    2013-12-01

    The Mg II h and k lines are the prime chromospheric diagnostics of NASA's Interface Region Imaging Spectrograph (IRIS). In the previous papers of this series, we used a realistic three-dimensional radiative magnetohydrodynamics model to calculate the h and k lines in detail and investigated how their spectral features relate to the underlying atmosphere. In this work, we employ the same approach to investigate how the h and k diagnostics fare when taking into account the finite resolution of IRIS and different noise levels. In addition, we investigate the diagnostic potential of several other photospheric lines and near-continuum regions present in the near-ultraviolet (NUV) window of IRIS and study the formation of the NUV slit-jaw images. We find that the instrumental resolution of IRIS has a small effect on the quality of the h and k diagnostics; the relations between the spectral features and atmospheric properties are mostly unchanged. The peak separation is the most affected diagnostic, but mainly due to limitations of the simulation. The effects of noise start to be noticeable at a signal-to-noise ratio (S/N) of 20, but we show that with noise filtering one can obtain reliable diagnostics at least down to a S/N of 5. The many photospheric lines present in the NUV window provide velocity information for at least eight distinct photospheric heights. Using line-free regions in the h and k far wings, we derive good estimates of photospheric temperature for at least three heights. Both of these diagnostics, in particular the latter, can be obtained even at S/Ns as low as 5.

  20. ACTUAL-WASTE TESTING OF ULTRAVIOLET LIGHT TO AUGMENT THE ENHANCED CHEMICAL CLEANING OF SRS SLUDGE

    SciTech Connect (OSTI)

    Martino, C.; King, W.; Ketusky, E.

    2012-07-10

    In support of Savannah River Site (SRS) tank closure efforts, the Savannah River National Laboratory (SRNL) conducted Real Waste Testing (RWT) to evaluate Enhanced Chemical Cleaning (ECC), an alternative to the baseline 8 wt% oxalic acid (OA) chemical cleaning technology for tank sludge heel removal. ECC utilizes a more dilute OA solution (2 wt%) and an oxalate destruction technology using ozonolysis with or without the application of ultraviolet (UV) light. SRNL conducted tests of the ECC process using actual SRS waste material from Tanks 5F and 12H. The previous phase of testing involved testing of all phases of the ECC process (sludge dissolution, OA decomposition, product evaporation, and deposition tank storage) but did not involve the use of UV light in OA decomposition. The new phase of testing documented in this report focused on the use of UV light to assist OA decomposition, but involved only the OA decomposition and deposition tank portions of the process. Compared with the previous testing at analogous conditions without UV light, OA decomposition with the use of UV light generally reduced time required to reach the target of <100 mg/L oxalate. This effect was the most pronounced during the initial part of the decomposition batches, when pH was <4. For the later stages of each OA decomposition batch, the increase in OA decomposition rate with use of the UV light appeared to be minimal. Testing of the deposition tank storage of the ECC product resulted in analogous soluble concentrations regardless of the use or non-use of UV light in the ECC reactor.

  1. Infrared lessons for ultraviolet gravity: the case of massive gravity and Born-Infeld

    SciTech Connect (OSTI)

    Jimnez, Jose Beltrn; Heisenberg, Lavinia; Olmo, Gonzalo J. E-mail: Lavinia.Heisenberg@unige.ch

    2014-11-01

    We generalize the ultraviolet sector of gravitation via a Born-Infeld action using lessons from massive gravity. The theory contains all of the elementary symmetric polynomials and is treated in the Palatini formalism. We show how the connection can be solved algebraically to be the Levi-Civita connection of an effective metric. The non-linearity of the algebraic equations yields several branches, one of which always reduces to General Relativity at low curvatures. We explore in detail a minimal version of the theory, for which we study solutions in the presence of a perfect fluid with special attention to the cosmological evolution. In vacuum we recover Ricci-flat solutions, but also an additional physical solution corresponding to an Einstein space. The existence of two physical branches remains for non-vacuum solutions and, in addition, the branch that connects to the Einstein space in vacuum is not very sensitive to the specific value of the energy density. For the branch that connects to the General Relativity limit we generically find three behaviours for the Hubble function depending on the equation of state of the fluid, namely: either there is a maximum value for the energy density that connects continuously with vacuum, or the energy density can be arbitrarily large but the Hubble function saturates and remains constant at high energy densities, or the energy density is unbounded and the Hubble function grows faster than in General Relativity. The second case is particularly interesting because it could offer an interesting inflationary epoch even in the presence of a dust component. Finally, we discuss the possibility of avoiding certain types of singularities within the minimal model.

  2. Ultraviolet observations of Super-Chandrasekhar mass type Ia supernova candidates with swift UVOT

    SciTech Connect (OSTI)

    Brown, Peter J.; Smitka, Michael T.; Krisciunas, Kevin; Wang, Lifan [George P. and Cynthia Woods Mitchell Institute for Fundamental Physics and Astronomy, Texas A and M University, Department of Physics and Astronomy, 4242 TAMU, College Station, TX 77843 (United States); Kuin, Paul; De Pasquale, Massimiliano [Mullard Space Science Laboratory, University College London, Holmbury St. Mary, Dorking Surrey, RH5 6NT (United Kingdom); Scalzo, Richard [Research School of Astronomy and Astrophysics, The Australian National University, Mount Stromlo Observatory, Cotter Road, Weston Creek, ACT 2611 (Australia); Holland, Stephen [Space Telescope Science Center 3700 San Martin Drive, Baltimore, MD 21218 (United States); Milne, Peter, E-mail: pbrown@physics.tamu.edu [Steward Observatory, University of Arizona, Tucson, AZ 85719 (United States)

    2014-05-20

    Among Type Ia supernovae (SNe Ia), a class of overluminous objects exist whose ejecta mass is inferred to be larger than the canonical Chandrasekhar mass. We present and discuss the UV/optical photometric light curves, colors, absolute magnitudes, and spectra of three candidate Super-Chandrasekhar mass SNe2009dc, 2011aa, and 2012dnobserved with the Swift Ultraviolet/Optical Telescope. The light curves are at the broad end for SNe Ia, with the light curves of SN 2011aa being among the broadest ever observed. We find all three to have very blue colors which may provide a means of excluding these overluminous SNe from cosmological analysis, though there is some overlap with the bluest of 'normal' SNe Ia. All three are overluminous in their UV absolute magnitudes compared to normal and broad SNe Ia, but SNe 2011aa and 2012dn are not optically overluminous compared to normal SNe Ia. The integrated luminosity curves of SNe 2011aa and 2012dn in the UVOT range (1600-6000 ) are only half as bright as SN 2009dc, implying a smaller {sup 56}Ni yield. While it is not enough to strongly affect the bolometric flux, the early time mid-UV flux makes a significant contribution at early times. The strong spectral features in the mid-UV spectra of SNe 2009dc and 2012dn suggest a higher temperature and lower opacity to be the cause of the UV excess rather than a hot, smooth blackbody from shock interaction. Further work is needed to determine the ejecta and {sup 56}Ni masses of SNe 2011aa and 2012dn and to fully explain their high UV luminosities.

  3. Overlying extreme-ultraviolet arcades preventing eruption of a filament observed by AIA/SDO

    SciTech Connect (OSTI)

    Chen, Huadong; Ma, Suli; Zhang, Jun

    2013-11-20

    Using the multi-wavelength data from the Atmospheric Imaging Assembly/Solar Dynamic Observatory (AIA/SDO) and the Sun Earth Connection Coronal and Heliospheric Investigation/Solar Terrestrial Relations Observatory (SECCHI/STEREO), we report a failed filament eruption in NOAA AR 11339 on 2011 November 3. The eruption was associated with an X1.9 flare, but without any coronal mass ejection (CME), coronal dimming, or extreme ultraviolet (EUV) waves. Some magnetic arcades above the filament were observed distinctly in EUV channels, especially in the AIA 94 and 131 wavebands, before and during the filament eruption process. Our results show that the overlying arcades expanded along with the ascent of the filament at first until they reached a projected height of about 49 Mm above the Sun's surface, where they stopped. The following filament material was observed to be confined by the stopped EUV arcades and not to escape from the Sun. After the flare, a new filament formed at the low corona where part of the former filament remained before its eruption. These results support that the overlying arcades play an important role in preventing the filament from successfully erupting outward. We also discuss in this paper the EUV emission of the overlying arcades during the flare. It is rare for a failed filament eruption to be associated with an X1.9 class flare, but not with a CME or EUV waves. Therefore, this study also provides valuable insight into the triggering mechanism of the initiation of CMEs and EUV waves.

  4. A chain of winking (oscillating) filaments triggered by an invisible extreme-ultraviolet wave

    SciTech Connect (OSTI)

    Shen, Yuandeng; Tian, Zhanjun; Zhao, Ruijuan; Ichimoto, Kiyoshi; Ishii, Takako T.; Shibata, Kazunari

    2014-05-10

    Winking (oscillating) filaments have been observed for many years. However, observations of successive winking filaments in one event have not yet been reported. In this paper, we present the observations of a chain of winking filaments and a subsequent jet that are observed right after the X2.1 flare in AR11283. The event also produced an extreme-ultraviolet (EUV) wave that has two components: an upward dome-like wave (850 km s{sup 1}) and a lateral surface wave (554 km s{sup 1}) that was very weak (or invisible) in imaging observations. By analyzing the temporal and spatial relationships between the oscillating filaments and the EUV waves, we propose that all the winking filaments and the jet were triggered by the weak (or invisible) lateral surface EUV wave. The oscillation of the filaments last for two or three cycles, and their periods, Doppler velocity amplitudes, and damping times are 11-22 minutes, 6-14 km s{sup 1}, and 25-60 minutes, respectively. We further estimate the radial component magnetic field and the maximum kinetic energy of the filaments, and they are 5-10 G and ?10{sup 19} J, respectively. The estimated maximum kinetic energy is comparable to the minimum energy of ordinary EUV waves, suggesting that EUV waves can efficiently launch filament oscillations on their path. Based on our analysis results, we conclude that the EUV wave is a good agent for triggering and connecting successive but separated solar activities in the solar atmosphere, and it is also important for producing solar sympathetic eruptions.

  5. ULTRAVIOLET EMISSION-LINE CORRELATIONS IN HST/COS SPECTRA OF ACTIVE GALACTIC NUCLEI: SINGLE-EPOCH BLACK HOLE MASSES

    SciTech Connect (OSTI)

    Tilton, Evan M.; Shull, J. Michael, E-mail: evan.tilton@colorado.edu, E-mail: michael.shull@colorado.edu [CASA, Department of Astrophysical and Planetary Sciences, University of Colorado, 389-UCB, Boulder, CO 80309 (United States)

    2013-09-01

    Effective methods of measuring supermassive black hole masses in active galactic nuclei (AGNs) are of critical importance to studies of galaxy evolution. While there has been much success in obtaining masses through reverberation mapping, the extensive observing time required by this method has limited the practicality of applying it to large samples at a variety of redshifts. This limitation highlights the need to estimate these masses using single-epoch spectroscopy of ultraviolet (UV) emission lines. We use UV spectra of 44 AGNs from HST/COS, the International Ultraviolet Explorer, and the Far Ultraviolet Spectroscopic Explorer of the C IV {lambda}1549, O VI {lambda}1035, O III] {lambda}1664, He II {lambda}1640, C II {lambda}1335, and Mg II {lambda}2800 emission lines and explore their potential as tracers of the broad-line region and supermassive black hole mass. The higher signal-to-noise ratio and better spectral resolution of the Cosmic Origins Spectrograph (COS) on the Hubble Space Telescope (HST) resolve AGN intrinsic absorption and produce more accurate line widths. From these, we test the viability of mass-scaling relationships based on line widths and luminosities and carry out a principal component analysis based on line luminosities, widths, skewness, and kurtosis. At L{sub 1450} {<=} 10{sup 45} erg s{sup -1}, the UV line luminosities correlate well with H{beta}, as does the 1450 A continuum luminosity. We find that C IV, O VI, and Mg II can be used as reasonably accurate estimators of AGN black hole masses, while He II and C II are uncorrelated.

  6. FAR-ULTRAVIOLET SPECTROSCOPY OF THE NOVA-LIKE VARIABLE KQ MONOCEROTIS: A NEW SW SEXTANTIS STAR?

    SciTech Connect (OSTI)

    Wolfe, Aaron; Sion, Edward M.; Bond, Howard E. E-mail: edward.sion@villanova.edu

    2013-06-01

    New optical spectra obtained with the SMARTS 1.5 m telescope and archival International Ultraviolet Explorer (IUE) far-ultraviolet (FUV) spectra of the nova-like variable KQ Mon are discussed. The optical spectra reveal Balmer lines in absorption as well as He I absorption superposed on a blue continuum. The 2011 optical spectrum is similar to the KPNO 2.1 m IIDS spectrum we obtained 33 years earlier except that the Balmer and He I absorption is stronger in 2011. Far-ultraviolet IUE spectra reveal deep absorption lines due to C II, Si III, Si IV, C IV, and He II, but no P Cygni profiles indicative of wind outflow. We present the results of the first synthetic spectral analysis of the IUE archival spectra of KQ Mon with realistic optically thick, steady-state, viscous accretion-disk models with vertical structure and high-gravity photosphere models. We find that the photosphere of the white dwarf (WD) contributes very little FUV flux to the spectrum and is overwhelmed by the accretion light of a steady disk. Disk models corresponding to a WD mass of {approx}0.6 M {sub Sun }, with an accretion rate of order 10{sup -9} M {sub Sun} yr{sup -1} and disk inclinations between 60 Degree-Sign and 75 Degree-Sign , yield distances from the normalization in the range of 144-165 pc. KQ Mon is discussed with respect to other nova-like variables. Its spectroscopic similarity to the FUV spectra of three definite SW Sex stars suggests that it is likely a member of the SW Sex class and lends support to the possibility that the WD is magnetic.

  7. PREDICTING Lyα AND Mg II FLUXES FROM K AND M DWARFS USING GALAXY EVOLUTION EXPLORER ULTRAVIOLET PHOTOMETRY

    SciTech Connect (OSTI)

    Shkolnik, Evgenya L.; Rolph, Kristina A.; Peacock, Sarah; Barman, Travis S. E-mail: kristina.rolph@fandm.edu E-mail: barman@lpl.arizona.edu

    2014-11-20

    A star's ultraviolet (UV) emission can greatly affect the atmospheric chemistry and physical properties of closely orbiting planets with the potential for severe mass loss. In particular, the Lyα emission line at 1216 Å, which dominates the far-ultraviolet (FUV) spectrum, is a major source of photodissociation of important atmospheric molecules such as water and methane. The intrinsic flux of Lyα, however, cannot be directly measured due to the absorption of neutral hydrogen in the interstellar medium and contamination by geocoronal emission. To date, reconstruction of the intrinsic Lyα line based on Hubble Space Telescope spectra has been accomplished for 46 FGKM nearby stars, 28 of which have also been observed by the Galaxy Evolution Explorer (GALEX). Our investigation provides a correlation between published intrinsic Lyα and GALEX far- and near-ultraviolet (NUV) chromospheric fluxes for K and M stars. The negative correlations between the ratio of the Lyα to the GALEX fluxes reveal how the relative strength of Lyα compared to the broadband fluxes weakens as the FUV and NUV excess flux increase. We also correlate GALEX fluxes with the strong NUV Mg II h+k spectral emission lines formed at lower chromospheric temperatures than Lyα. The reported correlations provide estimates of intrinsic Lyα and Mg II fluxes for the thousands of K and M stars in the archived GALEX all-sky surveys. These will constrain new stellar upper atmosphere models for cool stars and provide realistic inputs to models describing exoplanetary photochemistry and atmospheric evolution in the absence of UV spectroscopy.

  8. HINODE/EXTREME-ULTRAVIOLET IMAGING SPECTROMETER OBSERVATIONS OF THE TEMPERATURE STRUCTURE OF THE QUIET CORONA

    SciTech Connect (OSTI)

    Brooks, David H.; Warren, Harry P. [Space Science Division, Code 7673, Naval Research Laboratory, Washington, DC 20375 (United States); Williams, David R. [Mullard Space Science Laboratory, University College London, Holmbury St Mary, Dorking, Surrey RH5 6NT (United Kingdom); Watanabe, Tetsuya, E-mail: dhbrooks@ssd5.nrl.navy.mi [National Astronomical Observatory of Japan, Osawa, Mitaka, Tokyo 181-8588 (Japan)

    2009-11-10

    We present a differential emission measure (DEM) analysis of the quiet solar corona on disk using data obtained by the Extreme-ultraviolet Imaging Spectrometer (EIS) on Hinode. We show that the expected quiet-Sun DEM distribution can be recovered from judiciously selected lines, and that their average intensities can be reproduced to within 30%. We present a subset of these selected lines spanning the temperature range log T = 5.6-6.4 K that can be used to derive the DEM distribution reliably, including a subset of iron lines that can be used to derive the DEM distribution free of the possibility of uncertainties in the elemental abundances. The subset can be used without the need for extensive measurements, and the observed intensities can be reproduced to within the estimated uncertainty in the pre-launch calibration of EIS. Furthermore, using this subset, we also demonstrate that the quiet coronal DEM distribution can be recovered on size scales down to the spatial resolution of the instrument (1'' pixels). The subset will therefore be useful for studies of small-scale spatial inhomogeneities in the coronal temperature structure, for example, in addition to studies requiring multiple DEM derivations in space or time. We apply the subset to 45 quiet-Sun data sets taken in the period 2007 January to April, and show that although the absolute magnitude of the coronal DEM may scale with the amount of released energy, the shape of the distribution is very similar up to at least log T approx 6.2 K in all cases. This result is consistent with the view that the shape of the quiet-Sun DEM is mainly a function of the radiating and conducting properties of the plasma and is fairly insensitive to the location and rate of energy deposition. This universal DEM may be sensitive to other factors such as loop geometry, flows, and the heating mechanism, but if so they cannot vary significantly from quiet-Sun region to region.

  9. THE GALEX TIME DOMAIN SURVEY. I. SELECTION AND CLASSIFICATION OF OVER A THOUSAND ULTRAVIOLET VARIABLE SOURCES

    SciTech Connect (OSTI)

    Gezari, S.; Martin, D. C.; Forster, K.; Neill, J. D.; Morrissey, P.; Wyder, T. K.; Huber, M.; Burgett, W. S.; Chambers, K. C.; Kaiser, N.; Magnier, E. A.; Tonry, J. L.; Heckman, T.; Bianchi, L.; Neff, S. G.; Seibert, M.; Schiminovich, D.; Price, P. A.

    2013-03-20

    We present the selection and classification of over a thousand ultraviolet (UV) variable sources discovered in {approx}40 deg{sup 2} of GALEX Time Domain Survey (TDS) NUV images observed with a cadence of 2 days and a baseline of observations of {approx}3 years. The GALEX TDS fields were designed to be in spatial and temporal coordination with the Pan-STARRS1 Medium Deep Survey, which provides deep optical imaging and simultaneous optical transient detections via image differencing. We characterize the GALEX photometric errors empirically as a function of mean magnitude, and select sources that vary at the 5{sigma} level in at least one epoch. We measure the statistical properties of the UV variability, including the structure function on timescales of days and years. We report classifications for the GALEX TDS sample using a combination of optical host colors and morphology, UV light curve characteristics, and matches to archival X-ray, and spectroscopy catalogs. We classify 62% of the sources as active galaxies (358 quasars and 305 active galactic nuclei), and 10% as variable stars (including 37 RR Lyrae, 53 M dwarf flare stars, and 2 cataclysmic variables). We detect a large-amplitude tail in the UV variability distribution for M-dwarf flare stars and RR Lyrae, reaching up to |{Delta}m| = 4.6 mag and 2.9 mag, respectively. The mean amplitude of the structure function for quasars on year timescales is five times larger than observed at optical wavelengths. The remaining unclassified sources include UV-bright extragalactic transients, two of which have been spectroscopically confirmed to be a young core-collapse supernova and a flare from the tidal disruption of a star by dormant supermassive black hole. We calculate a surface density for variable sources in the UV with NUV < 23 mag and |{Delta}m| > 0.2 mag of {approx}8.0, 7.7, and 1.8 deg{sup -2} for quasars, active galactic nuclei, and RR Lyrae stars, respectively. We also calculate a surface density rate in the UV for transient sources, using the effective survey time at the cadence appropriate to each class, of {approx}15 and 52 deg{sup -2} yr{sup -1} for M dwarfs and extragalactic transients, respectively.

  10. Ultraviolet photodissociation dynamics of the n-propyl and i-propyl radicals

    SciTech Connect (OSTI)

    Song, Yu; Zheng, Xianfeng; Zhou, Weidong; Lucas, Michael; Zhang, Jingsong

    2015-06-14

    Ultraviolet (UV) photodissociation dynamics of jet-cooled n-propyl (n-C{sub 3}H{sub 7}) radical via the 3s Rydberg state and i-propyl (i-C{sub 3}H{sub 7}) radical via the 3p Rydberg states are studied in the photolysis wavelength region of 230260 nm using high-n Rydberg atom time-of-flight and resonance enhanced multiphoton ionization techniques. The H-atom photofragment yield spectra of the n-propyl and i-propyl radicals are broad and in good agreement with the UV absorption spectra. The H + propene product translational energy distributions, P(E{sub T})s, of both n-propyl and i-propyl are bimodal, with a slow component peaking around 5-6 kcal/mol and a fast one peaking at ?50 kcal/mol (n-propyl) and ?45 kcal/mol (i-propyl). The fraction of the average translational energy in the total excess energy, ?f{sub T}?, is 0.3 for n-propyl and 0.2 for i-propyl, respectively. The H-atom product angular distributions of the slow components of n-propyl and i-propyl are isotropic, while that of the fast component of n-propyl is anisotropic (with an anisotropy parameter ?0.8) and that of i-propyl is nearly isotropic. Site-selective loss of the ? hydrogen atom is confirmed using the partially deuterated CH{sub 3}CH{sub 2}CD{sub 2} and CH{sub 3}CDCH{sub 3} radicals. The bimodal translational energy and angular distributions indicate two dissociation pathways to the H + propene products in the n-propyl and i-propyl radicals: (i) a unimolecular dissociation pathway from the hot ground-state propyl after internal conversion from the 3s and 3p Rydberg states and (ii) a direct, prompt dissociation pathway coupling the Rydberg excited states to a repulsive part of the ground-state surface, presumably via a conical intersection.

  11. SIMULTANEOUS X-RAY AND ULTRAVIOLET OBSERVATIONS OF THE SW SEXTANTIS STAR DW URSAE MAJORIS

    SciTech Connect (OSTI)

    Hoard, D. W.; Wachter, S. [Spitzer Science Center, California Institute of Technology, MS 220-6, 1200 E. California Blvd., Pasadena, CA 91125 (United States); Lu, Ting-Ni [Institute of Astronomy, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Knigge, Christian [School of Physics and Astronomy, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom); Homer, Lee; Szkody, Paula [Department of Astronomy, University of Washington, Box 351580, Seattle, WA 98195-1580 (United States); Still, M. [NASA Ames Research Center, Moffett Field, CA 94035 (United States); Long, Knox S. [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD 21218 (United States); Dhillon, V. S., E-mail: hoard@ipac.caltech.ed [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom)

    2010-11-15

    We present the first pointed X-ray observation of DW Ursae Majoris, a novalike cataclysmic variable (CV) and one of the archetype members of the SW Sextantis class, obtained with the XMM-Newton satellite. These data provide the first detailed look at an SW Sex star in the X-ray regime (with previous X-ray knowledge of the SW Sex stars limited primarily to weak or non-detections in the ROSAT All Sky Survey). It is also one of only a few XMM-Newton observations (to date) of any high mass transfer rate novalike CV, and the only one in the evolutionarily important 3-4 hr orbital period range. The observed X-ray spectrum of DW UMa is very soft, with {approx}95% of the detected X-ray photons at energies <2 keV. The spectrum can be fit equally well by a one-component cooling flow model, with a temperature range of 0.2-3.5 keV, or a two-component, two-temperature thermal plasma model, containing hard ({approx}5-6 keV) and soft ({approx}0.8 keV) components. The X-ray light curve of DW UMa shows a likely partial eclipse, implying X-ray reprocessing in a vertically extended region, and an orbital modulation, implying a structural asymmetry in the X-ray reprocessing site (e.g., it cannot be a uniform corona). We also obtained a simultaneous near-ultraviolet light curve of DW UMa using the Optical Monitor on XMM-Newton. This light curve is similar in appearance to published optical-UV light curves of DW UMa and shows a prominent deep eclipse. Regardless of the exact nature of the X-ray reprocessing site in DW UMa, the lack of a prominent hard X-ray total eclipse and very low fraction of high energy X-rays point to the presence of an optically and geometrically thick accretion disk that obscures the boundary layer and modifies the X-ray spectrum emitted near the white dwarf.

  12. The Efficacy of Ultraviolet Radiation for Sterilizing Tools Used for Surgically Implanting Transmitters into Fish

    SciTech Connect (OSTI)

    Walker, Ricardo W.; Markillie, Lye Meng; Colotelo, Alison HA; Gay, Marybeth E.; Woodley, Christa M.; Brown, Richard S.

    2013-02-28

    Telemetry is frequently used to examine the behavior of fish, and the transmitters used are normally surgically implanted into the coelom of fish. Implantation requires the use of surgical tools such as scalpels, forceps, needle holders, and sutures. When several fish are implanted consecutively for large telemetry studies, it is common for surgical tools to be sterilized or, at minimum, disinfected between each use so that pathogens that may be present are not spread among fish. However, autoclaving tools can take a long period of time, and chemical sterilants or disinfectants can be harmful to both humans and fish and have varied effectiveness. Ultraviolet (UV) radiation is commonly used to disinfect water in aquaculture facilities. However, this technology has not been widely used to sterilize tools for surgical implantation of transmitters in fish. To determine its efficacy for this application, Pacific Northwest National Laboratory researchers used UV radiation to disinfect surgical tools (i.e., forceps, needle holder, stab scalpel, and suture) that were exposed to one of four aquatic organisms that typically lead to negative health issues for salmonids. These organisms included Aeromonas salmonicida, Flavobacterium psychrophilum, Renibacterium salmoninarum, and Saprolegnia parasitica. Surgical tools were exposed to the bacteria by dipping them into a confluent suspension of three varying concentrations (i.e., low, medium, high). After exposure to the bacterial culture, tools were placed into a mobile Millipore UV sterilization apparatus. The tools were then exposed for three different time periods2, 5, or 15 min. S. parasitica, a water mold, was tested using an agar plate method and forceps-pinch method. UV light exposures of 5 and 15 min were effective at killing all four organisms. UV light was also effective at killing Geobacillus stearothermophilus, the organism used as a biological indicator to verify effectiveness of steam sterilizers. These techniques appear to provide a quick alternative disinfection technique for some surgical tools that is less harmful to both humans and fish while not producing chemical waste. However, we do not recommend using these methods with tools that have overlapping parts or other structures that cannot be directly exposed to UV light such as needle holders.

  13. Method for high-precision multi-layered thin film deposition for deep and extreme ultraviolet mirrors

    DOE Patents [OSTI]

    Ruffner, J.A.

    1999-06-15

    A method for coating (flat or non-flat) optical substrates with high-reflectivity multi-layer coatings for use at Deep Ultra-Violet (DUV) and Extreme Ultra-Violet (EUV) wavelengths. The method results in a product with minimum feature sizes of less than 0.10 [micro]m for the shortest wavelength (13.4 nm). The present invention employs a computer-based modeling and deposition method to enable lateral and vertical thickness control by scanning the position of the substrate with respect to the sputter target during deposition. The thickness profile of the sputter targets is modeled before deposition and then an appropriate scanning algorithm is implemented to produce any desired, radially-symmetric thickness profile. The present invention offers the ability to predict and achieve a wide range of thickness profiles on flat or figured substrates, i.e., account for 1/R[sup 2] factor in a model, and the ability to predict and accommodate changes in deposition rate as a result of plasma geometry, i.e., over figured substrates. 15 figs.

  14. Method for high-precision multi-layered thin film deposition for deep and extreme ultraviolet mirrors

    DOE Patents [OSTI]

    Ruffner, Judith Alison (Albuquerque, NM)

    1999-01-01

    A method for coating (flat or non-flat) optical substrates with high-reflectivity multi-layer coatings for use at Deep Ultra-Violet ("DUV") and Extreme Ultra-Violet ("EUV") wavelengths. The method results in a product with minimum feature sizes of less than 0.10-.mu.m for the shortest wavelength (13.4-nm). The present invention employs a computer-based modeling and deposition method to enable lateral and vertical thickness control by scanning the position of the substrate with respect to the sputter target during deposition. The thickness profile of the sputter targets is modeled before deposition and then an appropriate scanning algorithm is implemented to produce any desired, radially-symmetric thickness profile. The present invention offers the ability to predict and achieve a wide range of thickness profiles on flat or figured substrates, i.e., account for 1/R.sup.2 factor in a model, and the ability to predict and accommodate changes in deposition rate as a result of plasma geometry, i.e., over figured substrates.

  15. Paving the Way to Nanoelectronics 16 nm and Smaller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Paving the Way to Nanoelectronics 16 nm and Smaller Print As the nanoelectronics industry pushes towards feature sizes of 22 nm and smaller, conventional single-exposure refractive lithography systems used to print circuit patterns onto computer chips will no longer be feasible. Extreme ultraviolet (EUV) lithography, utilizing reflective optics and 13-nm-wavelength light to print chips, is the leading candidate to meet the industry's future needs. Despite strong progress in EUV lithography over

  16. Paving the Way to Nanoelectronics 16 nm and Smaller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Paving the Way to Nanoelectronics 16 nm and Smaller Print As the nanoelectronics industry pushes towards feature sizes of 22 nm and smaller, conventional single-exposure refractive lithography systems used to print circuit patterns onto computer chips will no longer be feasible. Extreme ultraviolet (EUV) lithography, utilizing reflective optics and 13-nm-wavelength light to print chips, is the leading candidate to meet the industry's future needs. Despite strong progress in EUV lithography over

  17. Paving the Way to Nanoelectronics 16 nm and Smaller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Paving the Way to Nanoelectronics 16 nm and Smaller Print As the nanoelectronics industry pushes towards feature sizes of 22 nm and smaller, conventional single-exposure refractive lithography systems used to print circuit patterns onto computer chips will no longer be feasible. Extreme ultraviolet (EUV) lithography, utilizing reflective optics and 13-nm-wavelength light to print chips, is the leading candidate to meet the industry's future needs. Despite strong progress in EUV lithography over

  18. Paving the Way to Nanoelectronics 16 nm and Smaller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Paving the Way to Nanoelectronics 16 nm and Smaller Print As the nanoelectronics industry pushes towards feature sizes of 22 nm and smaller, conventional single-exposure refractive lithography systems used to print circuit patterns onto computer chips will no longer be feasible. Extreme ultraviolet (EUV) lithography, utilizing reflective optics and 13-nm-wavelength light to print chips, is the leading candidate to meet the industry's future needs. Despite strong progress in EUV lithography over

  19. Paving the Way to Nanoelectronics 16 nm and Smaller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Paving the Way to Nanoelectronics 16 nm and Smaller Print As the nanoelectronics industry pushes towards feature sizes of 22 nm and smaller, conventional single-exposure refractive lithography systems used to print circuit patterns onto computer chips will no longer be feasible. Extreme ultraviolet (EUV) lithography, utilizing reflective optics and 13-nm-wavelength light to print chips, is the leading candidate to meet the industry's future needs. Despite strong progress in EUV lithography over

  20. Paving the Way to Nanoelectronics 16 nm and Smaller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Paving the Way to Nanoelectronics 16 nm and Smaller Print As the nanoelectronics industry pushes towards feature sizes of 22 nm and smaller, conventional single-exposure refractive lithography systems used to print circuit patterns onto computer chips will no longer be feasible. Extreme ultraviolet (EUV) lithography, utilizing reflective optics and 13-nm-wavelength light to print chips, is the leading candidate to meet the industry's future needs. Despite strong progress in EUV lithography over

  1. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect (OSTI)

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  2. A solar type II radio burst from coronal mass ejection-coronal ray interaction: Simultaneous radio and extreme ultraviolet imaging

    SciTech Connect (OSTI)

    Chen, Yao; Du, Guohui; Feng, Shiwei; Kong, Xiangliang; Wang, Bing; Feng, Li; Guo, Fan; Li, Gang

    2014-05-20

    Simultaneous radio and extreme ultraviolet (EUV)/white-light imaging data are examined for a solar type II radio burst occurring on 2010 March 18 to deduce its source location. Using a bow-shock model, we reconstruct the three-dimensional EUV wave front (presumably the type-II-emitting shock) based on the imaging data of the two Solar TErrestrial RElations Observatory spacecraft. It is then combined with the Nanay radio imaging data to infer the three-dimensional position of the type II source. It is found that the type II source coincides with the interface between the coronal mass ejection (CME) EUV wave front and a nearby coronal ray structure, providing evidence that the type II emission is physically related to the CME-ray interaction. This result, consistent with those of previous studies, is based on simultaneous radio and EUV imaging data for the first time.

  3. Effects of the dynamics of droplet-based laser-produced plasma on angular extreme ultraviolet emission profile

    SciTech Connect (OSTI)

    Giovannini, Andrea Z.; Abhari, Reza S.

    2014-05-12

    The emission distribution of extreme ultraviolet (EUV) radiation from droplet targets is dependent on the dynamics of the laser-produced plasma. The EUV emission is measured on a 2% bandwidth centered at 13.5?nm (in-band). The targets of the laser are small (sub-50 ?m) tin droplets, and the in-band emission distribution is measured for different laser irradiances and droplet sizes at various angular positions. Larger droplets lead to a faster decay of EUV emission at larger angles with respect to the laser axis. A decrease in laser irradiance has the opposite effect. The measurements are used together with an analytical model to estimate plume dynamics. Additionally, the model is used to estimate EUV emission distribution for a desired droplet diameter and laser irradiance.

  4. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect (OSTI)

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  5. High blue-near ultraviolet photodiode response of vertically stacked graphene-MoS{sub 2}-metal heterostructures

    SciTech Connect (OSTI)

    Wi, Sungjin; Chen, Mikai; Nam, Hongsuk; Liu, Amy C.; Meyhofer, Edgar; Liang, Xiaogan

    2014-06-09

    We present a study on the photodiode response of vertically stacked graphene/MoS{sub 2}/metal heterostructures in which MoS{sub 2} layers are doped with various plasma species. In comparison with undoped heterostructures, such doped ones exhibit significantly improved quantum efficiencies in both photovoltaic and photoconductive modes. This indicates that plasma-doping-induced built-in potentials play an important role in photocurrent generation. As compared to indium-tin-oxide/ MoS{sub 2}/metal structures, the presented graphene/MoS{sub 2}/metal heterostructures exhibit greatly enhanced quantum efficiencies in the blue-near ultraviolet region, which is attributed to the low density of recombination centers at graphene/MoS{sub 2} heterojunctions. This work advances the knowledge for making photo-response devices based on layered materials.

  6. High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

    SciTech Connect (OSTI)

    Wu, Y.; Li, X.; Xu, P.; Wang, Y.; Shen, X.; Liu, X.; Yang, Q.; Hasan, T.

    2015-02-02

    We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5?nm. The dominant emission, detectable at ultralow (<1??A) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25??A current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter?

  7. Projection optics box

    DOE Patents [OSTI]

    Hale, Layton C. (Livermore, CA); Malsbury, Terry (Tracy, CA); Hudyma, Russell M. (San Ramon, CA); Parker, John M. (Tracy, CA)

    2000-01-01

    A projection optics box or assembly for use in an optical assembly, such as in an extreme ultraviolet lithography (EUVL) system using 10-14 nm soft x-ray photons. The projection optics box utilizes a plurality of highly reflective optics or mirrors, each mounted on a precision actuator, and which reflects an optical image, such as from a mask, in the EUVL system onto a point of use, such as a target or silicon wafer, the mask, for example, receiving an optical signal from a source assembly, such as a developed from laser system, via a series of highly reflective mirrors of the EUVL system. The plurality of highly reflective optics or mirrors are mounted in a housing assembly comprised of a series of bulkheads having wall members secured together to form a unit construction of maximum rigidity. Due to the precision actuators, the mirrors must be positioned precisely and remotely in tip, tilt, and piston (three degrees of freedom), while also providing exact constraint.

  8. X-ray lithography using holographic images

    DOE Patents [OSTI]

    Howells, Malcolm S. (Berkeley, CA); Jacobsen, Chris (Sound Beach, NY)

    1997-01-01

    Methods for forming X-ray images having 0.25 .mu.m minimum line widths on X-ray sensitive material are presented. A holgraphic image of a desired circuit pattern is projected onto a wafer or other image-receiving substrate to allow recording of the desired image in photoresist material. In one embodiment, the method uses on-axis transmission and provides a high flux X-ray source having modest monochromaticity and coherence requirements. A layer of light-sensitive photoresist material on a wafer with a selected surface is provided to receive the image(s). The hologram has variable optical thickness and variable associated optical phase angle and amplitude attenuation for transmission of the X-rays. A second embodiment uses off-axis holography. The wafer receives the holographic image by grazing incidence reflection from a hologram printed on a flat metal or other highly reflecting surface or substrate. In this second embodiment, an X-ray beam with a high degree of monochromaticity and spatial coherence is required.

  9. X-ray lithography using holographic images

    DOE Patents [OSTI]

    Howells, M.S.; Jacobsen, C.

    1997-03-18

    Methods for forming X-ray images having 0.25 {micro}m minimum line widths on X-ray sensitive material are presented. A holographic image of a desired circuit pattern is projected onto a wafer or other image-receiving substrate to allow recording of the desired image in photoresist material. In one embodiment, the method uses on-axis transmission and provides a high flux X-ray source having modest monochromaticity and coherence requirements. A layer of light-sensitive photoresist material on a wafer with a selected surface is provided to receive the image(s). The hologram has variable optical thickness and variable associated optical phase angle and amplitude attenuation for transmission of the X-rays. A second embodiment uses off-axis holography. The wafer receives the holographic image by grazing incidence reflection from a hologram printed on a flat metal or other highly reflecting surface or substrate. In this second embodiment, an X-ray beam with a high degree of monochromaticity and spatial coherence is required. 15 figs.

  10. Synchrotron-based EUV lithography illuminator simulator

    DOE Patents [OSTI]

    Naulleau, Patrick P.

    2004-07-27

    A lithographic illuminator to illuminate a reticle to be imaged with a range of angles is provided. The illumination can be employed to generate a pattern in the pupil of the imaging system, where spatial coordinates in the pupil plane correspond to illumination angles in the reticle plane. In particular, a coherent synchrotron beamline is used along with a potentially decoherentizing holographic optical element (HOE), as an experimental EUV illuminator simulation station. The pupil fill is completely defined by a single HOE, thus the system can be easily modified to model a variety of illuminator fill patterns. The HOE can be designed to generate any desired angular spectrum and such a device can serve as the basis for an illuminator simulator.

  11. Composite patterning devices for soft lithography

    DOE Patents [OSTI]

    Rogers, John A.; Menard, Etienne

    2007-03-27

    The present invention provides methods, devices and device components for fabricating patterns on substrate surfaces, particularly patterns comprising structures having microsized and/or nanosized features of selected lengths in one, two or three dimensions. The present invention provides composite patterning devices comprising a plurality of polymer layers each having selected mechanical properties, such as Young's Modulus and flexural rigidity, selected physical dimensions, such as thickness, surface area and relief pattern dimensions, and selected thermal properties, such as coefficients of thermal expansion, to provide high resolution patterning on a variety of substrate surfaces and surface morphologies.

  12. Biochemical Lithography - Templating of supported lipid bilayers...

    Office of Scientific and Technical Information (OSTI)

    Abstract not provided. Authors: Paxton, Walter F ; Nogan, John ; Montano, Gabriel A. ; Adams, Peter G. ; Swingle, Kirtsi K. ; Lamoureux, L. ; Firestone, Millicent A. ; Mukundan,...

  13. Proceedings of the eighth international colloquium on ultraviolet and x-ray spectroscopy of astrophysical and laboratory plasmas (IAU colloquium 86)

    SciTech Connect (OSTI)

    Not Available

    1984-01-01

    This volume represents the Proceedings of the Eighth International Colloquium on Ultraviolet and X-Ray Spectroscopy of Astrophysical and Laboratory Plasmas. The aim of this series of colloquia has been to bring together workers in the fields of astrophysical spectroscopy, laboratory spectroscopy and atomic physics in order to exchange ideas and results on problems which are common to these different disciplines. In addition to the presented papers there was a poster paper session. (WRF)

  14. The efficacy of post porosity plasma protection against vacuum-ultraviolet damage in porous low-k materials

    SciTech Connect (OSTI)

    Lionti, K.; Volksen, W.; Darnon, M.; Magbitang, T.; Dubois, G.

    2015-03-21

    As of today, plasma damage remains as one of the main challenges to the reliable integration of porous low-k materials into microelectronic devices at the most aggressive node. One promising strategy to limit damage of porous low-k materials during plasma processing is an approach we refer to as post porosity plasma protection (P4). In this approach, the pores of the low-k material are filled with a sacrificial agent prior to any plasma treatment, greatly minimizing the total damage by limiting the physical interactions between plasma species and the low-k material. Interestingly, the contribution of the individual plasma species to the total plasma damage is not fully understood. In this study, we investigated the specific damaging effect of vacuum-ultraviolet (v-UV) photons on a highly porous, k = 2.0 low-k material and we assessed the P4 protective effect against them. It was found that the impact of the v-UV radiation varied depending upon the v-UV emission lines of the plasma. More importantly, we successfully demonstrated that the P4 process provides excellent protection against v-UV damage.

  15. Near ultraviolet photochemistry of 2-bromo- and 2-iodothiophene: Revealing photoinduced ring opening in the gas phase?

    SciTech Connect (OSTI)

    Marchetti, Barbara; Karsili, Tolga N. V.; Ashfold, Michael N. R.; Kelly, Orla; Kapetanopoulos, Panos

    2015-06-14

    Velocity map imaging methods, with a new and improved ion optics design, have been used to explore the near ultraviolet photodissociation dynamics of gas phase 2-bromo- and 2-iodothiophene molecules. In both cases, the ground (X) and spin-orbit excited (X*) (where X = Br, I) atom products formed at the longest excitation wavelengths are found to recoil with fast, anisotropic velocity distributions, consistent with prompt CX bond fission following excitation via a transition whose dipole moment is aligned parallel to the breaking bond. Upon tuning to shorter wavelengths, this fast component fades and is progressively replaced by a slower, isotropic recoil distribution. Complementary electronic structure calculations provide a plausible explanation for this switch in fragmentation behaviournamely, the opening of a rival CS bond extension pathway to a region of conical intersection with the ground state potential energy surface. The resulting ground state molecules are formed with more than sufficient internal energy to sample the configuration space associated with several parent isomers and to dissociate to yield X atom products in tandem with both cyclic and ring-opened partner fragments.

  16. PROBING THE FERMI BUBBLES IN ULTRAVIOLET ABSORPTION: A SPECTROSCOPIC SIGNATURE OF THE MILKY WAY'S BICONICAL NUCLEAR OUTFLOW

    SciTech Connect (OSTI)

    Fox, Andrew J.; Bordoloi, Rongmon; Hernandez, Svea; Tumlinson, Jason; Savage, Blair D.; Wakker, Bart P.; Lockman, Felix J.; Bland-Hawthorn, Joss; Kim, Tae-Sun; Benjamin, Robert A.

    2015-01-20

    Giant lobes of plasma extend ?55 above and below the Galactic center, glowing in emission from gamma rays (the Fermi Bubbles) to microwaves and polarized radio waves. We use ultraviolet absorption-line spectra from the Hubble Space Telescope to constrain the velocity of the outflowing gas within these regions, targeting the quasar PDS456 (?, b = 10.4, +11.2). This sightline passes through a clear biconical structure seen in hard X-ray and gamma-ray emission near the base of the northern Fermi Bubble. We report two high-velocity metal absorption components, at v {sub LSR} = 235 and +250kms{sup 1}, which cannot be explained by co-rotating gas in the Galactic disk or halo. Their velocities are suggestive of an origin on the front and back side of an expanding biconical outflow emanating from the Galactic center. We develop simple kinematic biconical outflow models that can explain the observed profiles with an outflow velocity of ?900kms{sup 1} and a full opening angle of ?110 (matching the X-ray bicone). This indicates Galactic center activity over the last ?2.5-4.0Myr, in line with age estimates of the Fermi Bubbles. The observations illustrate the use of UV spectroscopy to probe the properties of swept-up gas venting into the Fermi Bubbles.

  17. Quantitative analysis of electron energy loss spectra and modelling of optical properties of multilayer systems for extreme ultraviolet radiation regime

    SciTech Connect (OSTI)

    Gusenleitner, S.; Hauschild, D.; Reinert, F.; Handick, E.

    2014-03-28

    Ruthenium capped multilayer coatings for use in the extreme ultraviolet (EUV) radiation regime have manifold applications in science and industry. Although the Ru cap shall protect the reflecting multilayers, the surface of the heterostructures suffers from contamination issues and surface degradation. In order to get a better understanding of the effects of these impurities on the optical parameters, reflection electron energy loss spectroscopy (REELS) measurements of contaminated and H cleaned Ru multilayer coatings were taken at various primary electron beam energies. Experiments conducted at low primary beam energies between 100?eV and 1000?eV are very surface sensitive due to the short inelastic mean free path of the electrons in this energy range. Therefore, influences of the surface condition on the above mentioned characteristics can be appraised. In this paper, it can be shown that carbon and oxide impurities on the mirror surface decrease the transmission of the Ru cap by about 0.75% and the overall reflectance of the device is impaired as the main share of the non-transmitted EUV light is absorbed in the contamination layer.

  18. Ejecta Particle-Size Measurements in Vacuum and Helium Gas using Ultraviolet In-Line Fraunhofer Holography

    SciTech Connect (OSTI)

    Sorenson, D. S.; Pazuchanics, P.; Johnson, R.; Malone, R. M.; Kaufman, M. I.; Tibbitts, A.; Tunnell, T.; Marks, D.; Capelle, G. A.; Grover, M.; Marshall, B.; Stevens, G. D.; Turley, W. D.; LaLone, B.

    2014-06-30

    An ultraviolet (UV) in-line Fraunhofer holography diagnostic has been developed for making high-resolution spatial measurements of ejecta particles traveling at many mm/?sec. This report will discuss the development of the diagnostic, including the high-powered laser system and high-resolution optical relay system. In addition, we will also describe the system required to reconstruct the images from the hologram and the corresponding analysis of those images to extract particles. Finally, we will present results from six high-explosive (HE), shock-driven Sn-ejecta experiments. Particle-size distributions will be shown that cover most of the ejecta velocities for experiments conducted in a vacuum, and helium gas environments. In addition, a modification has been made to the laser system that produces two laser pulses separated by 6.8 ns. This double-pulsed capability allows a superposition of two holograms to be acquired at two different times, thus allowing ejecta velocities to be measured directly. Results from this double-pulsed experiment will be described.

  19. Ejecta Particle-Size Measurements in Vacuum and Helium Gas using Ultraviolet In-Line Fraunhofer Holography

    SciTech Connect (OSTI)

    Sorenson, Danny S.; Pazuchanics, Peter; Johnson, Randall P.; Malone, R. M.; Kaufman, M. I.; Tibbitts, A.; Tunnell, T.; Marks, D.; Capelle, G. A.; Grover, M.; Marshall, B.; Stevens, G. D.; Turley, W. D.; LaLone, B.

    2014-06-25

    An Ultraviolet (UV) in-line Fraunhofer holography diagnostic has been developed for making high-resolution spatial measurements of ejecta particles traveling at many mm/?sec. This report will discuss the development of the diagnostic including the high-powered laser system and high-resolution optical relay system. In addition, the system required to reconstruct the images from the hologram and the corresponding analysis of those images to extract particles will also be described. Finally, results from six high-explosive (HE), shock-driven Sn ejecta experiments will be presented. Particle size distributions will be shown that cover most of the ejecta velocities for experiments conducted in a vacuum, and helium gas environments. In addition, a modification has been made to the laser system that produces two laser pulses separated by 6.8 ns. This double-pulsed capability allows a superposition of two holograms to be acquired at two different times, thus allowing ejecta velocities to be measured directly. Results from this double pulsed experiment will be described.

  20. HUBBLE SPACE TELESCOPE DETECTION OF THE DOUBLE PULSAR SYSTEM J07373039 IN THE FAR-ULTRAVIOLET

    SciTech Connect (OSTI)

    Durant, Martin; Kargaltsev, Oleg; Pavlov, George G. E-mail: kargaltsev@email.gwu.edu

    2014-03-01

    We report on detection of the double pulsar system J07373039 in the far-UV with the Advanced Camera for Surveys/Solar-blind Channel detector aboard Hubble Space Telescope. We measured the energy flux F = (4.6 1.0) 10{sup 17}ergcm{sup 2} s{sup 1} in the 1250-1550 band, which corresponds to the extinction-corrected luminosity L ? 1.5 10{sup 28}ergs{sup 1} for the distance d = 1.1kpc and a plausible reddening E(B V) = 0.1. If the detected emission comes from the entire surface of one of the neutron stars with a 13km radius, the surface blackbody temperature is in the range T ? (2-5) 10{sup 5}K for a reasonable range of interstellar extinction. Such a temperature requires an internal heating mechanism to operate in old neutron stars, or, less likely, it might be explained by heating of the surface of the less energetic Pulsar B by the relativistic wind of Pulsar A. If the far-ultraviolet emission is non-thermal (e.g., produced in the magnetosphere of Pulsar A), its spectrum exhibits a break between the UV and X-rays.

  1. Optical and ultraviolet observations of the narrow-lined type Ia SN 2012fr in NGC 1365

    SciTech Connect (OSTI)

    Zhang, Ju-Jia; Bai, Jin-Ming; Wang, Bo; Liu, Zheng-Wei [Yunnan Observatories (YNAO), Chinese Academy of Sciences, Kunming 650011 (China); Wang, Xiao-Feng; Zhao, Xu-Lin; Chen, Jun-Cheng [Physics Department and Tsinghua Center for Astrophysics (THCA), Tsinghua University, Beijing 100084 (China); Zhang, Tian-Meng, E-mail: jujia@ynao.ac.cn, E-mail: baijinming@ynao.ac.cn, E-mail: wang_xf@mail.tsinghua.edu.cn [National Astronomical Observatories of China (NAOC), Chinese Academy of Sciences, Beijing 100012 (China)

    2014-07-01

    Extensive optical and ultraviolet (UV) observations of the type Ia supernova (SN Ia) 2012fr are presented in this paper. It has a relatively high luminosity, with an absolute B-band peak magnitude of about 19.5 mag and a smaller post-maximum decline rate than normal SNe Ia (e.g., ?m {sub 15}(B) =0.85 0.05 mag). Based on the UV and optical light curves, we derived that a {sup 56}Ni mass of about 0.88 M {sub ?} was synthesized in the explosion. The earlier spectra are characterized by noticeable high-velocity features of Si II ?6355 and Ca II with velocities in the range of ?22, 000-25, 000 km s{sup 1}. At around the maximum light, these spectral features are dominated by the photospheric components which are noticeably narrower than normal SNe Ia. The post-maximum velocity of the photosphere remains almost constant at ?12,000 km s{sup 1} for about one month, reminiscent of the behavior of some luminous SNe Ia like SN 1991T. We propose that SN 2012fr may represent a subset of the SN 1991T-like SNe Ia viewed in a direction with a clumpy or shell-like structure of ejecta, in terms of a significant level of polarization reported in Maund et al. in 2013.

  2. Rapid low-temperature processing of metal-oxide thin film transistors with combined far ultraviolet and thermal annealing

    SciTech Connect (OSTI)

    Leppniemi, J. Ojanper, K.; Kololuoma, T.; Huttunen, O.-H.; Majumdar, H.; Alastalo, A.; Dahl, J.; Tuominen, M.; Laukkanen, P.

    2014-09-15

    We propose a combined far ultraviolet (FUV) and thermal annealing method of metal-nitrate-based precursor solutions that allows efficient conversion of the precursor to metal-oxide semiconductor (indium zinc oxide, IZO, and indium oxide, In{sub 2}O{sub 3}) both at low-temperature and in short processing time. The combined annealing method enables a reduction of more than 100?C in annealing temperature when compared to thermally annealed reference thin-film transistor (TFT) devices of similar performance. Amorphous IZO films annealed at 250?C with FUV for 5?min yield enhancement-mode TFTs with saturation mobility of ?1?cm{sup 2}/(Vs). Amorphous In{sub 2}O{sub 3} films annealed for 15?min with FUV at temperatures of 180?C and 200?C yield TFTs with low-hysteresis and saturation mobility of 3.2?cm{sup 2}/(Vs) and 7.5?cm{sup 2}/(Vs), respectively. The precursor condensation process is clarified with x-ray photoelectron spectroscopy measurements. Introducing the FUV irradiation at 160?nm expedites the condensation process via in situ hydroxyl radical generation that results in the rapid formation of a continuous metal-oxygen-metal structure in the film. The results of this paper are relevant in order to upscale printed electronics fabrication to production-scale roll-to-roll environments.

  3. DIFFRACTION, REFRACTION, AND REFLECTION OF AN EXTREME-ULTRAVIOLET WAVE OBSERVED DURING ITS INTERACTIONS WITH REMOTE ACTIVE REGIONS

    SciTech Connect (OSTI)

    Shen Yuandeng; Liu Yu; Zhao Ruijuan; Tian Zhanjun; Su Jiangtao; Li Hui; Ichimoto, Kiyoshi; Shibata, Kazunari

    2013-08-20

    We present observations of the diffraction, refraction, and reflection of a global extreme-ultraviolet (EUV) wave propagating in the solar corona. These intriguing phenomena are observed when the wave interacts with two remote active regions, and together they exhibit properties of an EUV wave. When the wave approached AR11465, it became weaker and finally disappeared in the active region, but a few minutes later a new wavefront appeared behind the active region, and it was not concentric with the incoming wave. In addition, a reflected wave was also simultaneously observed on the wave incoming side. When the wave approached AR11459, it transmitted through the active region directly and without reflection. The formation of the new wavefront and the transmission could be explained with diffraction and refraction effects, respectively. We propose that the different behaviors observed during the interactions may be caused by different speed gradients at the boundaries of the two active regions. We find that the EUV wave formed ahead of a group of expanding loops a few minutes after the start of the loops' expansion, which represents the initiation of the associated coronal mass ejection (CME). Based on these results, we conclude that the EUV wave should be a nonlinear magnetosonic wave or shock driven by the associated CME, which propagated faster than the ambient fast mode speed and gradually slowed down to an ordinary linear wave. Our observations support the hybrid model that includes both fast wave and slow non-wave components.

  4. Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Miller, Mary A.; Tangyunyong, Paiboon; Edward I. Cole, Jr.

    2016-01-12

    In this study, laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes(LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increasedmore » leakage is not present in devices without AVM signals. Transmission electron microscopyanalysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)].« less

  5. Tuning the plasmon band number of aluminum nanorod within the ultraviolet-visible region by gold coating

    SciTech Connect (OSTI)

    Zhu, Jian E-mail: nanoptzhao@163.com; Li, Jian-Jun; Zhao, Jun-Wu E-mail: nanoptzhao@163.com

    2014-11-15

    The localized surface plasmon (LSP) properties of Al nanorod with Au coating have been investigated by using the quasi-static calculation. Because of the anisotropic plasmon splitting and the plasmon coupling between the Al and Au surfaces, the band number of LSP in the Al-Au core-shell nanorod could be tuned from 2 to 4 continuously in the ultraviolet-visible region. Due to the non-spherical symmetry and the dielectric polarization-induced plasmon energy fading, the Au coating-dependent plasmon shift and split are further affected by the aspect ratio and the dielectric surrounding. When the aspect ratio or the surrounding dielectric constant has a small value, the band number of LSP could only be tuned from 2 to 3. However, the band number of LSP could only be tuned from 3 to 4 when the aspect ratio or the surrounding dielectric constant has a large value. This tunable band number of LSP in the Au-coated Al nanorod provides potential application for multichannel plasmonic nanosensors.

  6. A full-dimensional multilayer multiconfiguration time-dependent Hartree study on the ultraviolet absorption spectrum of formaldehyde oxide

    SciTech Connect (OSTI)

    Meng, Qingyong, E-mail: mengqingyong@dicp.ac.cn [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Zhongshan Road 457, 116023 Dalian (China); Meyer, Hans-Dieter, E-mail: hans-dieter.meyer@pci.uni-heidelberg.de [Theoretische Chemie, Physikalisch-Chemisches Institut, Ruprecht-Karls Universitt Heidelberg, Im Neuenheimer Feld 229, D-69120 Heidelberg (Germany)

    2014-09-28

    Employing the multilayer multiconfiguration time-dependent Hartree (ML-MCTDH) method in conjunction with the multistate multimode vibronic coupling Hamiltonian (MMVCH) model, we perform a full dimensional (9D) quantum dynamical study on the simplest Criegee intermediate, formaldehyde oxide, in five lower-lying singlet electronic states. The ultraviolet (UV) spectrum is then simulated by a Fourier transform of the auto-correlation function. The MMVCH model is built based on extensive MRCI(8e,8o)/aug-cc-pVTZ calculations. To ensure a fast convergence of the final calculations, a large number of ML-MCTDH test calculations is performed to find an appropriate multilayer separations (ML-trees) of the ML-MCTDH nuclear wave functions, and the dynamical calculations are carefully checked to ensure that the calculations are well converged. To compare the computational efficiency, standard MCTDH simulations using the same Hamiltonian are also performed. A comparison of the MCTDH and ML-MCTDH calculations shows that even for the present not-too-large system (9D here) the ML-MCTDH calculations can save a considerable amount of computational resources while producing identical spectra as the MCTDH calculations. Furthermore, the present theoretical B{sup ~} {sup 1}A{sup ?}?X{sup ~} {sup 1}A{sup ?} UV spectral band and the corresponding experimental measurements [J. M. Beames, F. Liu, L. Lu, and M. I. Lester, J. Am. Chem. Soc. 134, 2004520048 (2012); L. Sheps, J. Phys. Chem. Lett. 4, 42014205 (2013); W.-L. Ting, Y.-H. Chen, W. Chao, M. C. Smith, and J. J.-M. Lin, Phys. Chem. Chem. Phys. 16, 1043810443 (2014)] are discussed. To the best of our knowledge, this is the first theoretical UV spectrum simulated for this molecule including nuclear motion beyond an adiabatic harmonic approximation.

  7. The ultraviolet-bright, slowly declining transient PS1-11af as a partial tidal disruption event

    SciTech Connect (OSTI)

    Chornock, R.; Berger, E.; Zauderer, B. A.; Kamble, A.; Soderberg, A. M.; Czekala, I.; Dittmann, J.; Drout, M.; Foley, R. J.; Fong, W.; Kirshner, R. P.; Lunnan, R.; Marion, G. H.; Narayan, G.; Gezari, S.; Rest, A.; Riess, A. G.; Chomiuk, L.; Huber, M. E.; Lawrence, A.; and others

    2014-01-01

    We present the Pan-STARRS1 discovery of the long-lived and blue transient PS1-11af, which was also detected by Galaxy Evolution Explorer with coordinated observations in the near-ultraviolet (NUV) band. PS1-11af is associated with the nucleus of an early type galaxy at redshift z = 0.4046 that exhibits no evidence for star formation or active galactic nucleus activity. Four epochs of spectroscopy reveal a pair of transient broad absorption features in the UV on otherwise featureless spectra. Despite the superficial similarity of these features to P-Cygni absorptions of supernovae (SNe), we conclude that PS1-11af is not consistent with the properties of known types of SNe. Blackbody fits to the spectral energy distribution are inconsistent with the cooling, expanding ejecta of a SN, and the velocities of the absorption features are too high to represent material in homologous expansion near a SN photosphere. However, the constant blue colors and slow evolution of the luminosity are similar to previous optically selected tidal disruption events (TDEs). The shape of the optical light curve is consistent with models for TDEs, but the minimum accreted mass necessary to power the observed luminosity is only ?0.002 M {sub ?}, which points to a partial disruption model. A full disruption model predicts higher bolometric luminosities, which would require most of the radiation to be emitted in a separate component at high energies where we lack observations. In addition, the observed temperature is lower than that predicted by pure accretion disk models for TDEs and requires reprocessing to a constant, lower temperature. Three deep non-detections in the radio with the Very Large Array over the first two years after the event set strict limits on the production of any relativistic outflow comparable to Swift J1644+57, even if off-axis.

  8. Ultraviolet stimulation of hydrogen peroxide production using aminoindazole, diaminopyridine, and phenylenediamine solid polymer complexes of Zn(II)

    SciTech Connect (OSTI)

    Hayes, Jennifer A.; Schubert, David M.; Amonette, James E.; Nachimuthu, Ponnusamy; Disselkamp, Robert S.

    2008-06-25

    Hydrogen peroxide is a valuable chemical commodity whose production relies on expensive methods. If an efficient, sustainable, and inexpensive solar-mediated production method could be developed from the reaction between dioxygen and water then its use as a fuel may be possible and gain acceptance. Hydrogen peroxide at greater than 10 M possesses a high specific energy, is environmentally clean, and is easily stored. However, the current method of manufacturing H2O2 via the anthraquinone process is environmentally unfriendly making the unexplored nature of its photochemical production from solar irradiation of interest. Here the concentration and quantum yield of hydrogen peroxide produced in an ultraviolet (UV-B) irradiated environment using aromatic and nitrogen-heterocyclic ring complexes of zinc(II) as solid substrates was studied. The amino-substituted isomers of the substrates indazole, pyridine, and phenylenediamine solid polymer complexes are examined. Samples exposed to the ambient atmosphere (e.g., aerated) were irradiated with a low power lamp with emission from 280-360 nm. Irradiation of various zinc complexes revealed Zn-5-aminoindazole to have the greatest first-day production of 63 mM/day with a 37% quantum yield. Para-phenylenediamine (PPAM) showed the greatest long-term stability and thus suggests H2O2 is produced photocatalytically. Isomeric forms of the catalysts organic components (e.g., amino groups) did have an effect on the production. Irradiation of diaminopyridine isomers indicated 2,3-diamino and 3,4-diamino structures were the most productive, each generating 32 mM/day hydrogen peroxide. However, the 2,5-diamino isomer showed no peroxide production. A significant decrease in hydrogen peroxide production in all but PPAM was noticed in the samples, suggesting the possibility of a catalyst poisoning mechanism. The samples ability to produce H2O2 is rationalized by proposing a reaction mechanism and examining the stability of the resonance structures of the different isomers.

  9. Optical and ultraviolet observations of a low-velocity type II plateau supernova 2013am in M65

    SciTech Connect (OSTI)

    Zhang, Jujia; Bai, Jinming; Fan, Yufeng; Wang, Jianguo; Yi, Weimin; Wang, Chuanjun; Xin, Yuxin; Liangchang; Zhang, Xiliang; Lun, Baoli; Wang, Xueli; He, Shousheng [Yunnan Observatories (YNAO), Chinese Academy of Sciences, Kunming 650216 (China); Wang, Xiaofeng; Huang, Fang; Mo, Jun [Physics Department and Tsinghua Center for Astrophysics (THCA), Tsinghua University, Beijing 100084 (China); Mazzali, Paolo A.; Bersier, David [Astrophysics Research Institute, Liverpool John Moores University, Liverpool Science Park, 146 Brownlow Hill, Liverpool L3 5RF (United Kingdom); Zhang, Tianmeng [National Astronomical Observatories of China (NAOC), Chinese Academy of Sciences, Beijing 100012 (China); Walker, Emma S., E-mail: jujia@ynao.ac.cn, E-mail: baijinming@ynao.ac.cn, E-mail: wang_xf@mail.tsinghua.edu.cn [Department of Physics, Yale University, New Haven, CT 06520-8121 (United States)

    2014-12-10

    Optical and ultraviolet observations for the nearby type II plateau supernova (SN IIP) 2013am in the nearby spiral galaxy M65 are presented in this paper. The early spectra are characterized by relatively narrow P-Cygni features, with ejecta velocities much lower than observed in normal SNe IIP (i.e., ?2000 km s{sup 1} versus ?5000 km {sup 1} in the middle of the plateau phase). Moreover, prominent Ca II absorptions are also detected in SN 2013am at relatively early phases. These spectral features are reminiscent of those seen in the low-velocity and low-luminosity SN IIP 2005cs. However, SN 2013am exhibits different photometric properties, having shorter plateau phases and brighter light curve tails if compared to SN 2005cs. Adopting R{sub V} = 3.1 and a mean value of total reddening derived from the photometric and spectroscopic methods (i.e., E(B V) = 0.55 0.19 mag), we find that SN 2013am may have reached an absolute V-band peak magnitude of 15.83 0.71 mag and produced an {sup 56}Ni mass of 0.016{sub ?0.006}{sup +0.010} M {sub ?} in the explosion. These parameters are close to those derived for SN 2008in and SN 2009N, which have been regarded as 'gap-filler' objects linking the faint SNe IIP to the normal ones. This indicates that some low-velocity SNe IIP may not necessarily result from the low-energetic explosions. The low expansion velocities could be due to a lower metallicity of the progenitor stars, a larger envelope mass ejected in the explosion, or the effect of viewing angle where these SNe were observed at an angle away from the polar direction.

  10. HST-COS OBSERVATIONS OF AGNs. I. ULTRAVIOLET COMPOSITE SPECTRA OF THE IONIZING CONTINUUM AND EMISSION LINES

    SciTech Connect (OSTI)

    Shull, J. Michael; Stevans, Matthew; Danforth, Charles W., E-mail: michael.shull@colorado.edu, E-mail: matthew.stevans@colorado.edu, E-mail: charles.danforth@colorado.edu [CASA, Department of Astrophysical and Planetary Sciences, University of Colorado, Boulder, CO 80309 (United States)

    2012-06-20

    The ionizing fluxes from quasars and other active galactic nuclei (AGNs) are critical for interpreting the emission-line spectra of AGNs and for photoionization and heating of the intergalactic medium. Using ultraviolet spectra from the Cosmic Origins Spectrograph (COS) on the Hubble Space Telescope (HST), we have directly measured the rest-frame ionizing continua and emission lines for 22 AGNs. Over the redshift range 0.026 < z < 1.44, COS samples the Lyman continuum and many far-UV emission lines (Ly{alpha} {lambda}1216, C IV {lambda}1549, Si IV/O IV] {lambda}1400, N V {lambda}1240, O VI {lambda}1035). Strong EUV emission lines with 14-22 eV excitation energies (Ne VIII {lambda}{lambda}770, 780, Ne V {lambda}569, O II {lambda}834, O III {lambda}833, {lambda}702, O IV {lambda}788, 608, 554, O V {lambda}630, N III {lambda}685) suggest the presence of hot gas in the broad emission-line region. The rest-frame continuum, F{sub {nu}}{proportional_to}{nu}{sup {alpha}{sub {nu}}}, shows a break at wavelengths {lambda} < 1000 A, with spectral index {alpha}{sub {nu}} = -0.68 {+-} 0.14 in the FUV (1200-2000 A) steepening to {alpha}{sub {nu}} = -1.41 {+-} 0.21 in the EUV (500-1000 A). The COS EUV index is similar to that of radio-quiet AGNs in the 2002 HST/FOS survey ({alpha}{sub {nu}} = -1.57 {+-} 0.17). We see no Lyman edge ({tau}{sub HI} < 0.03) or He I {lambda}584 emission in the AGN composite. Our 22 AGNs exhibit a substantial range of FUV/EUV spectral indices and a correlation with AGN luminosity and redshift, likely due to observing below the 1000 A spectral break.

  11. THE POTENTIAL IMPORTANCE OF BINARY EVOLUTION IN ULTRAVIOLET-OPTICAL SPECTRAL FITTING OF EARLY-TYPE GALAXIES

    SciTech Connect (OSTI)

    Li, Zhongmu; Mao, Caiyan; Chen, Li; Zhang, Qian; Li, Maocai

    2013-10-10

    Most galaxies possibly contain some binaries, and more than half of Galactic hot subdwarf stars, which are thought to be a possible origin of the UV-upturn of old stellar populations, are found in binaries. However, the effect of binary evolution has not been taken into account in most works on the spectral fitting of galaxies. This paper studies the role of binary evolution in the spectral fitting of early-type galaxies, via a stellar population synthesis model including both single and binary star populations. Spectra from ultraviolet to optical bands are fitted to determine a few galaxy parameters. The results show that the inclusion of binaries in stellar population models may lead to obvious change in the determination of some parameters of early-type galaxies and therefore it is potentially important for spectral studies. In particular, the ages of young components of composite stellar populations become much older when using binary star population models instead of single star population models. This implies that binary star population models will measure significantly different star formation histories for early-type galaxies compared to single star population models. In addition, stellar population models with binary interactions on average measure larger dust extinctions than single star population models. This suggests that when binary star population models are used, negative extinctions are possibly no longer necessary in the spectral fitting of galaxies (see previous works, e.g., Cid Fernandes et al. for comparison). Furthermore, it is shown that optical spectra have strong constraints on stellar age while UV spectra have strong constraints on binary fraction. Finally, our results suggest that binary star population models can provide new insight into the stellar properties of globular clusters.

  12. QUENCHING DEPENDS ON MORPHOLOGIES: IMPLICATIONS FROM THE ULTRAVIOLET-OPTICAL RADIAL COLOR DISTRIBUTIONS IN GREEN VALLEY GALAXIES

    SciTech Connect (OSTI)

    Pan, Zhizheng; Lin, Weipeng; Li, Jinrong; Kong, Xu; Wang, Jing E-mail: linwp@shao.ac.cn

    2014-09-01

    In this Letter, we analyze the radial ultraviolet-optical color distributions in a sample of low redshift green valley galaxies, with the Galaxy Evolution Explorer (GALEX)+Sloan Digital Sky Survey (SDSS) images, to investigate how the residual recent star formation is distributed in these galaxies. We find that the dust-corrected u r colors of early-type galaxies (ETGs) are flat out to R {sub 90}, while the colors monotonously turn blue when r > 0.5 R {sub 50} for late-type galaxies (LTGs). More than half of the ETGs are blue-cored and have remarkable positive NUV r color gradients, suggesting that their star formations are centrally concentrated. The rest have flat color distributions out to R {sub 90}. The centrally concentrated star formation activity in a large portion of ETGs is confirmed by the SDSS spectroscopy, showing that ?50% of the ETGs have EW(H?)>6.0 . Of the LTGs, 95% show uniform radial color profiles, which can be interpreted as a red bulge plus an extended blue disk. The links between the two kinds of ETGs, e.g., those objects having remarkable ''blue-cores'' and those having flat color gradients, are less known and require future investigations. It is suggested that the LTGs follow a general model by which quenching first occurs in the core regions, and then finally extend to the rest of the galaxy. Our results can be re-examined and have important implications for the IFU surveys, such as MaNGA and SAMI.

  13. THE MID-INFRARED AND NEAR-ULTRAVIOLET EXCESS EMISSIONS OF QUIESCENT GALAXIES ON THE RED SEQUENCE

    SciTech Connect (OSTI)

    Ko, Jongwan; Lee, Jong Chul; Hwang, Ho Seong; Sohn, Young-Jong

    2013-04-10

    We study the mid-infrared (IR) and near-ultraviolet (UV) excess emissions of spectroscopically selected quiescent galaxies on the optical red sequence. We use the Wide-field Infrared Survey Explorer mid-IR and Galaxy Evolution Explorer near-UV data for a spectroscopic sample of galaxies in the Sloan Digital Sky Survey Data Release 7 to study the possible connection between quiescent red-sequence galaxies with and without mid-IR/near-UV excess. Among 648 12 {mu}m detected quiescent red-sequence galaxies without H{alpha} emission, 26% and 55% show near-UV and mid-IR excess emissions, respectively. When we consider only bright (M{sub r} < -21.5) galaxies with an early-type morphology, the fraction of galaxies with recent star formation is still 39%. The quiescent red-sequence galaxies with mid-IR and near-UV excess emissions are optically fainter and have slightly smaller D{sub n} 4000 than those without mid-IR and near-UV excess emissions. We also find that mid-IR weighted mean stellar ages of quiescent red-sequence galaxies with mid-IR excess are larger than those with near-UV excess, and smaller than those without mid-IR and near-UV excess. The environmental dependence of the fraction of quiescent red-sequence galaxies with mid-IR and near-UV excess seems strong even though the trends of quiescent red-sequence galaxies with near-UV excess differ from those with mid-IR excess. These results indicate that the recent star formation traced by near-UV ({approx}< 1 Gyr) and mid-IR ({approx}< 2 Gyr) excess is not negligible among nearby, quiescent, red, early-type galaxies. We suggest a possible evolutionary scenario of quiescent red-sequence galaxies from quiescent red-sequence galaxies with near-UV excess to those with mid-IR excess to those without near-UV and mid-IR excess.

  14. THE FAR-ULTRAVIOLET 'CONTINUUM' IN PROTOPLANETARY DISK SYSTEMS. II. CARBON MONOXIDE FOURTH POSITIVE EMISSION AND ABSORPTION

    SciTech Connect (OSTI)

    France, Kevin; Schindhelm, Eric; Burgh, Eric B.; Brown, Alexander; Green, James C.; Herczeg, Gregory J.; Brown, Joanna M.; Harper, Graham M.; Linsky, Jeffrey L.; Yang Hao; Abgrall, Herve; Ardila, David R.; Bergin, Edwin; Bethell, Thomas; Calvet, Nuria; Ingleby, Laura; Espaillat, Catherine; Gregory, Scott G.; Hillenbrand, Lynne A.; Hussain, Gaitee

    2011-06-10

    We exploit the high sensitivity and moderate spectral resolution of the Hubble Space Telescope Cosmic Origins Spectrograph to detect far-ultraviolet (UV) spectral features of carbon monoxide (CO) present in the inner regions of protoplanetary disks for the first time. We present spectra of the classical T Tauri stars HN Tau, RECX-11, and V4046 Sgr, representative of a range of CO radiative processes. HN Tau shows CO bands in absorption against the accretion continuum. The CO absorption most likely arises in warm inner disk gas. We measure a CO column density and rotational excitation temperature of N(CO) = (2 {+-} 1) x 10{sup 17} cm{sup -2} and T{sub rot}(CO) 500 {+-} 200 K for the absorbing gas. We also detect CO A-X band emission in RECX-11 and V4046 Sgr, excited by UV line photons, predominantly H I Ly{alpha}. All three objects show emission from CO bands at {lambda} > 1560 A, which may be excited by a combination of UV photons and collisions with non-thermal electrons. In previous observations these emission processes were not accounted for due to blending with emission from the accretion shock, collisionally excited H{sub 2}, and photo-excited H{sub 2}, all of which appeared as a 'continuum' whose components could not be separated. The CO emission spectrum is strongly dependent upon the shape of the incident stellar Ly{alpha} emission profile. We find CO parameters in the range: N(CO) {approx} 10{sup 18}-10{sup 19} cm{sup -2}, T{sub rot}(CO) {approx}> 300 K for the Ly{alpha}-pumped emission. We combine these results with recent work on photo-excited and collisionally excited H{sub 2} emission, concluding that the observations of UV-emitting CO and H{sub 2} are consistent with a common spatial origin. We suggest that the CO/H{sub 2} ratio ({identical_to} N(CO)/N(H{sub 2})) in the inner disk is {approx}1, a transition between the much lower interstellar value and the higher value observed in solar system comets today, a result that will require future observational and theoretical study to confirm.

  15. Extreme ultraviolet reflector

    DOE Patents [OSTI]

    Newnam, Brian E. (Los Alamos, NM)

    1990-01-01

    A multi-faceted mirror forms a retroreflector for a resonator loop in a free electron laser (FEL) operating in the XUV (.lambda.=10-100 nm). The number of facets is determined by the angle-of-incidence needed to obtain total external reflectance (TER) from the facet surface and the angle through which the FEL beam is to be turned. Angles-of-incidence greater than the angle for TER may be used to increase the area of the beam incident on the surface and reduce energy absorption density. Suitable surface films having TER in the 10-100 nm range may be formed from a variety of materials, including Al, single-crystal Si, Ag, and Rh. One of the facets is formed as an off-axis conic section to collimate the output beam with minimum astigmatism.

  16. Vacuum ultraviolet laser

    DOE Patents [OSTI]

    Berkowitz, J.; Ruscic, B.M.; Greene, J.P.

    1984-07-06

    Transitions from the 2p/sup 4/(/sup 1/S/sub 0/)3s /sup 2/S/sub 1/2/ state of atomic fluorine to all allowed loser states produces laser emission at six new wavelengths: 680.7A, 682.6A, 3592.7A, 3574.1A, 6089.2A, and 6046.8A. Coherent radiation at these new wavelengths can be generated in an atomic fluorine laser operated as an amplifier or as an oscillator.

  17. Ultraviolet absorbing copolymers

    DOE Patents [OSTI]

    Gupta, Amitava (Pasadena, CA); Yavrouian, Andre H. (La Crescenta, CA)

    1982-01-01

    Photostable and weather stable absorping copolymers have been prepared from acrylic esters such as methyl methacrylate containing 0.1 to 5% of an 2-hydroxy-allyl benzophenone, preferably the 4,4' dimethoxy derivative thereof. The pendant benzophenone chromophores protect the acrylic backbone and when photoexcited do not degrade the ester side chain, nor abstract hydrogen from the backbone.

  18. Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

    SciTech Connect (OSTI)

    Verma, Jai Islam, S. M.; Protasenko, Vladimir; Kumar Kandaswamy, Prem; Xing, Huili; Jena, Debdeep

    2014-01-13

    Efficient semiconductor optical emitters in the deep-ultraviolet spectral window are encountering some of the most deep rooted problems of semiconductor physics. In III-Nitride heterostructures, obtaining short-wavelength photon emission requires the use of wide bandgap high Al composition AlGaN active regions. High conductivity electron (n-) and hole (p-) injection layers of even higher bandgaps are necessary for electrical carrier injection. This approach requires the activation of very deep dopants in very wide bandgap semiconductors, which is a difficult task. In this work, an approach is proposed and experimentally demonstrated to counter the challenges. The active region of the heterostructure light emitting diode uses ultrasmall epitaxially grown GaN quantum dots. Remarkably, the optical emission energy from GaN is pushed from 365?nm (3.4?eV, the bulk bandgap) to below 240?nm (>5.2?eV) because of extreme quantum confinement in the dots. This is possible because of the peculiar bandstructure and band alignments in the GaN/AlN system. This active region design crucially enables two further innovations for efficient carrier injection: Tunnel injection of carriers and polarization-induced p-type doping. The combination of these three advances results in major boosts in electroluminescence in deep-ultraviolet light emitting diodes and lays the groundwork for electrically pumped short-wavelength lasers.

  19. Beamlines

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Beamlines Micromachining X-ray Lithography Micromachining I (XRLM1), Port 2A, 10 mrad (Updated) X-ray lithography beamline for microfabrication. Two mode of operation, "white" and "mirror" light. Two Beryllium windows, 100 µm and 120 µm. Distance source point - mask plane 10.35 meter. DEX 02 scanner, from Jenoptik GmbH. Micromachining II (XRLM2), Port 2B, 10 mrad (Updated) X-ray lithography beamline for microfabrication. Full spectrum, "white light" beamline. Two

  20. Improved etch resistance of ZEP 520A in reactive ion etching through heat

    Office of Scientific and Technical Information (OSTI)

    and ultraviolet light treatment. (Journal Article) | SciTech Connect Improved etch resistance of ZEP 520A in reactive ion etching through heat and ultraviolet light treatment. Citation Details In-Document Search Title: Improved etch resistance of ZEP 520A in reactive ion etching through heat and ultraviolet light treatment. The authors have developed a treatment process to improve the etch resistance of an electron beam lithography resist (ZEP 520A) to allow direct pattern transfer from the

  1. Performance enhancement of GaN metalsemiconductormetal ultraviolet photodetectors by insertion of ultrathin interfacial HfO{sub 2} layer

    SciTech Connect (OSTI)

    Kumar, Manoj E-mail: aokyay@ee.bilkent.edu.tr; Tekcan, Burak; Okyay, Ali Kemal E-mail: aokyay@ee.bilkent.edu.tr

    2015-03-15

    The authors demonstrate improved device performance of GaN metalsemiconductormetal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO{sub 2} (UT-HfO{sub 2}) layer on GaN. The UT-HfO{sub 2} interfacial layer is grown by atomic layer deposition. The dark current of the PDs with UT-HfO{sub 2} is significantly reduced by more than two orders of magnitude compared to those without HfO{sub 2} insertion. The photoresponsivity at 360?nm is as high as 1.42 A/W biased at 5 V. An excellent improvement in the performance of the devices is ascribed to allowed electron injection through UT-HfO{sub 2} on GaN interface under UV illumination, resulting in the photocurrent gain with fast response time.

  2. Temporal characterization of a time-compensated monochromator for high-efficiency selection of extreme-ultraviolet pulses generated by high-order harmonics

    SciTech Connect (OSTI)

    Poletto, L.; Villoresi, P.; Benedetti, E.; Ferrari, F.; Stagira, S.; Sansone, G.; Nisoli, M.

    2008-07-15

    Ultrafast extreme-ultraviolet pulses are spectrally selected by a time-delay-compensated grating monochromator. The intrinsic very short duration of the pulses is obtained by exploiting the high-order harmonic generation process. The temporal characterization of the harmonic pulses is obtained using a cross-correlation method: pulses as short as 8 fs are measured at the output of the monochromator in the case of the 23rd harmonic. This value is in agreement with the expected duration of such pulses, indicating that the influence of the monochromator is negligible. The photon flux has been measured with a calibrated photodiode, pointing out the good efficiency of the monochromator, derived by the exploitation for the two gratings of the conical diffraction mounting.

  3. Absolute atomic oxygen and nitrogen densities in radio-frequency driven atmospheric pressure cold plasmas: Synchrotron vacuum ultra-violet high-resolution Fourier-transform absorption measurements

    SciTech Connect (OSTI)

    Niemi, K.; O'Connell, D.; Gans, T.; Oliveira, N. de; Joyeux, D.; Nahon, L.; Booth, J. P.

    2013-07-15

    Reactive atomic species play a key role in emerging cold atmospheric pressure plasma applications, in particular, in plasma medicine. Absolute densities of atomic oxygen and atomic nitrogen were measured in a radio-frequency driven non-equilibrium plasma operated at atmospheric pressure using vacuum ultra-violet (VUV) absorption spectroscopy. The experiment was conducted on the DESIRS synchrotron beamline using a unique VUV Fourier-transform spectrometer. Measurements were carried out in plasmas operated in helium with air-like N{sub 2}/O{sub 2} (4:1) admixtures. A maximum in the O-atom concentration of (9.1 {+-} 0.7) Multiplication-Sign 10{sup 20} m{sup -3} was found at admixtures of 0.35 vol. %, while the N-atom concentration exhibits a maximum of (5.7 {+-} 0.4) Multiplication-Sign 10{sup 19} m{sup -3} at 0.1 vol. %.

  4. Band structure of the epitaxial Fe/MgO/GaAs(001) tunnel junction studied by x-ray and ultraviolet photoelectron spectroscopies

    SciTech Connect (OSTI)

    Lu, Y.; Le Breton, J. C.; Turban, P.; Lepine, B.; Schieffer, P.; Jezequel, G.

    2006-10-09

    The electronic band structure in the epitaxial Fe/MgO/GaAs(001) tunnel junction has been studied by x-ray and ultraviolet photoelectron spectroscopy measurements. The Schottky barrier height (SBH) of Fe on MgO/GaAs heterostructure is determined to be 3.3{+-}0.1 eV, which sets the Fe Fermi level at about 0.3 eV above the GaAs valence band maximum. This SBH is also exactly the same as that measured from Fe on MgO monocrystal. After Fe deposition, no band bending change is observed in MgO and GaAs underlayers. On the contrary, Au and Al depositions led to clear variation of the band bending in both MgO and GaAs layers. This effect is analyzed as a fingerprint of defect states at the MgO/GaAs interface.

  5. ULTRAVIOLET SPECTROSCOPY OF RAPIDLY ROTATING SOLAR-MASS STARS: EMISSION-LINE REDSHIFTS AS A TEST OF THE SOLAR-STELLAR CONNECTION

    SciTech Connect (OSTI)

    Linsky, Jeffrey L.; Bushinsky, Rachel; Ayres, Tom; France, Kevin

    2012-07-20

    We compare high-resolution ultraviolet spectra of the Sun and thirteen solar-mass main-sequence stars with different rotational periods that serve as proxies for their different ages and magnetic field structures. In this, the second paper in the series, we study the dependence of ultraviolet emission-line centroid velocities on stellar rotation period, as rotation rates decrease from that of the Pleiades star HII314 (P{sub rot} = 1.47 days) to {alpha} Cen A (P{sub rot} = 28 days). Our stellar sample of F9 V to G5 V stars consists of six stars observed with the Cosmic Origins Spectrograph on the Hubble Space Telescope (HST) and eight stars observed with the Space Telescope Imaging Spectrograph on HST. We find a systematic trend of increasing redshift with more rapid rotation (decreasing rotation period) that is similar to the increase in line redshift between quiet and plage regions on the Sun. The fastest-rotating solar-mass star in our study, HII314, shows significantly enhanced redshifts at all temperatures above log T = 4.6, including the corona, which is very different from the redshift pattern observed in the more slowly rotating stars. This difference in the redshift pattern suggests that a qualitative change in the magnetic-heating process occurs near P{sub rot} = 2 days. We propose that HII314 is an example of a solar-mass star with a magnetic heating rate too large for the physical processes responsible for the redshift pattern to operate in the same way as for the more slowly rotating stars. HII314 may therefore lie above the high activity end of the set of solar-like phenomena that is often called the 'solar-stellar connection'.

  6. Speech masking and cancelling and voice obscuration

    DOE Patents [OSTI]

    Holzrichter, John F.

    2013-09-10

    A non-acoustic sensor is used to measure a user's speech and then broadcasts an obscuring acoustic signal diminishing the user's vocal acoustic output intensity and/or distorting the voice sounds making them unintelligible to persons nearby. The non-acoustic sensor is positioned proximate or contacting a user's neck or head skin tissue for sensing speech production information.

  7. Paving the Way to Nanoelectronics 16 nm and Smaller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Paving the Way to Nanoelectronics 16 nm and Smaller Paving the Way to Nanoelectronics 16 nm and Smaller Print Wednesday, 30 March 2011 00:00 As the nanoelectronics industry pushes towards feature sizes of 22 nm and smaller, conventional single-exposure refractive lithography systems used to print circuit patterns onto computer chips will no longer be feasible. Extreme ultraviolet (EUV) lithography, utilizing reflective optics and 13-nm-wavelength light to print chips, is the leading candidate to

  8. Generation of circularly polarized radiation from a compact plasma-based extreme ultraviolet light source for tabletop X-ray magnetic circular dichroism studies

    SciTech Connect (OSTI)

    Wilson, Daniel; Rudolf, Denis Juschkin, Larissa; Weier, Christian; Adam, Roman; Schneider, Claus M.; Winkler, Gerrit; Frmter, Robert; Danylyuk, Serhiy; Bergmann, Klaus; Grtzmacher, Detlev

    2014-10-15

    Generation of circularly polarized light in the extreme ultraviolet (EUV) spectral region (about 25 eV250 eV) is highly desirable for applications in spectroscopy and microscopy but very challenging to achieve in a small-scale laboratory. We present a compact apparatus for generation of linearly and circularly polarized EUV radiation from a gas-discharge plasma light source between 50 eV and 70 eV photon energy. In this spectral range, the 3p absorption edges of Fe (54 eV), Co (60 eV), and Ni (67 eV) offer a high magnetic contrast often employed for magneto-optical and electron spectroscopy as well as for magnetic imaging. We simulated and designed an instrument for generation of linearly and circularly polarized EUV radiation and performed polarimetric measurements of the degree of linear and circular polarization. Furthermore, we demonstrate first measurements of the X-ray magnetic circular dichroism at the Co 3p absorption edge with a plasma-based EUV light source. Our approach opens the door for laboratory-based, element-selective spectroscopy of magnetic materials and spectro-microscopy of ferromagnetic domains.

  9. Vacuum ultra-violet emission of plasma discharges with high Xe partial pressure using a cathode protective layer with high secondary electron emission

    SciTech Connect (OSTI)

    Zhu, Di; Song, Le; Zhang, Xiong; Kajiyama, Hiroshi

    2014-02-14

    In this work, the mechanism of the vacuum ultra-violet (VUV) emission of plasma discharges, with high Xe partial pressure and high ion-induced secondary electrons emission protective layer, is studied by measuring the VUV light emission directly and comparing it with two-dimensional simulations. From the panel measurement, we find that the high intensity of excimer VUV mainly contributes to the high luminous efficacy of SrCaO-plasma display panels (PDP) at a low sustain voltage. The unchanged Xe excitation efficiency indicates that the electron temperature is not decreased by the high secondary electrons emission protective layer, even though the sustain voltage is much lower. From the two-dimensional simulations, we can find that the ratio of excimer VUV to resonant VUV, which is determined by the collision rate in the discharge, is only significantly affected by the Xe partial pressure, while it is independent of the sustain voltage and the secondary-electrons-emission capability of protective layer. The unchanged average electron energy at the moment when the electric field becomes maximum confirms that the improvement of the VUV production efficiency mainly is attributed to the increase in electron heating efficiency of a PDP with high ion-induced secondary electrons emission protective layer. Combining the experimental and the simulation results, we conclude about the mechanism by which the VUV production is improved for the plasma display panel with a high Xe partial pressure and a cold cathode with high ion-induced secondary electrons emission.

  10. Fluorescence excitation and ultraviolet absorption spectra and theoretical calculations for benzocyclobutane: Vibrations and structure of its excited S{sub 1}(?,?{sup *}) electronic state

    SciTech Connect (OSTI)

    Shin, Hee Won; Ocola, Esther J.; Laane, Jaan; Kim, Sunghwan

    2014-01-21

    The fluorescence excitation spectra of jet-cooled benzocyclobutane have been recorded and together with its ultraviolet absorption spectra have been used to assign the vibrational frequencies for this molecule in its S{sub 1}(?,?{sup *}) electronic excited state. Theoretical calculations at the CASSCF(6,6)/aug-cc-pVTZ level of theory were carried out to compute the structure of the molecule in its excited state. The calculated structure was compared to that of the molecule in its electronic ground state as well as to the structures of related molecules in their S{sub 0} and S{sub 1}(?,?{sup *}) electronic states. In each case the decreased ? bonding in the electronic excited states results in longer carbon-carbon bonds in the benzene ring. The skeletal vibrational frequencies in the electronic excited state were readily assigned and these were compared to the ground state and to the frequencies of five similar molecules. The vibrational levels in both S{sub 0} and S{sub 1}(?,?{sup *}) states were remarkably harmonic in contrast to the other bicyclic molecules. The decreases in the frequencies of the out-of-plane skeletal modes reflect the increased floppiness of these bicyclic molecules in their S{sub 1}(?,?{sup *}) excited state.

  11. Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes

    SciTech Connect (OSTI)

    Moseley, Michael Allerman, Andrew; Crawford, Mary; Wierer, Jonathan J.; Smith, Michael; Biedermann, Laura

    2014-08-07

    Electrical current transport through leakage paths in AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) and their effect on LED performance are investigated. Open-core threading dislocations, or nanopipes, are found to conduct current through nominally insulating Al{sub 0.7}Ga{sub 0.3}N layers and limit the performance of DUV-LEDs. A defect-sensitive phosphoric acid etch reveals these open-core threading dislocations in the form of large, micron-scale hexagonal etch pits visible with optical microscopy, while closed-core screw-, edge-, and mixed-type threading dislocations are represented by smaller and more numerous nanometer-scale pits visible by atomic-force microscopy. The electrical and optical performances of DUV-LEDs fabricated on similar Si-doped Al{sub 0.7}Ga{sub 0.3}N templates are found to have a strong correlation to the density of these nanopipes, despite their small fraction (<0.1% in this study) of the total density of threading dislocations.

  12. Luminescent properties of Eu{sup 2+}-doped BaGdF{sub 5} glass ceramics a potential blue phosphor for ultra-violet light-emitting diode

    SciTech Connect (OSTI)

    Zhang, Weihuan; Zhang, Yuepin Ouyang, Shaoye; Zhang, Zhixiong; Wang, Qian; Xia, Haiping

    2015-01-14

    Eu{sup 2+} doped transparent oxyfluoride glass ceramics containing BaGdF{sub 5} nanocrystals were successfully fabricated by melt-quenching technique under a reductive atmosphere. The structure of the glass and glass ceramics were investigated by differential scanning calorimetry, X-ray diffraction (XRD), and transmission electron microscopy (TEM). The luminescent properties were investigated by transmission, excitation, and emission spectra. The decay time of the Gd{sup 3+} ions at 312?nm excited with 275?nm were also investigated. The results of XRD and TEM indicated the existence of BaGdF5 nanocrystals in the transparent glass ceramics. The excitation spectra of Eu{sup 2+} doped glass ceramics showed an excellent overlap with the main emission region of an ultraviolet light-emitting diode (UV-LED). Compared with the as-made glass, the emission of glass ceramics is much stronger by a factor of increasing energy transfer efficiency from Gd{sup 3+} to Eu{sup 2+} ions, the energy transfer efficiency from Gd{sup 3+} to Eu{sup 2+} ions was discussed. In addition, the chromaticity coordinates of glass and glass ceramics specimens were also discussed, which indicated that the Eu{sup 2+} doped BaGdF{sub 5} glass ceramics may be used as a potential blue-emitting phosphor for UV-LED.

  13. Study of extreme-ultraviolet emission and properties of a coronal streamer from PROBA2/SWAP, HINODE/EIS and Mauna Loa Mk4 observations

    SciTech Connect (OSTI)

    Goryaev, F.; Slemzin, V.; Vainshtein, L. [P.N. Lebedev Physical Institute of the RAS (LPI), Moscow 119991 (Russian Federation); Williams, David R., E-mail: goryaev_farid@mail.ru [Mullard Space Science Laboratory, University College London, Holmbury St Mary, Surrey, RH5 6NT (United Kingdom)

    2014-02-01

    Wide-field extreme-ultraviolet (EUV) telescopes imaging in spectral bands sensitive to 1 MK plasma on the Sun often observe extended, ray-like coronal structures stretching radially from active regions to distances of 1.5-2 R {sub ?}, which represent the EUV counterparts of white-light streamers. To explain this phenomenon, we investigated the properties of a streamer observed on 2010 October 20 and 21, by the PROBA2/SWAP EUV telescope together with the Hinode/EIS (HOP 165) and the Mauna Loa Mk4 white-light coronagraph. In the SWAP 174 band comprising the Fe IX-Fe XI lines, the streamer was detected to a distance of 2 R {sub ?}. We assume that the EUV emission is dominated by collisional excitation and resonant scattering of monochromatic radiation coming from the underlying corona. Below 1.2 R {sub ?}, the plasma density and temperature were derived from the Hinode/EIS data by a line-ratio method. Plasma conditions in the streamer and in the background corona above 1.2 R {sub ?} from the disk center were determined by forward-modeling the emission that best fit the observational data in both EUV and white light. It was found that the plasma in the streamer above 1.2 R {sub ?} is nearly isothermal, with a temperature of T = 1.43 0.08 MK. The hydrostatic scale-height temperature determined from the evaluated density distribution was significantly higher (1.72 0.08 MK), which suggests the existence of outward plasma flow along the streamer. We conclude that, inside the streamer, collisional excitation provided more than 90% of the observed EUV emission, whereas, in the background corona, the contribution of resonance scattering became comparable with that of collisions at R ? 2 R {sub ?}.

  14. Effusive molecular beam-sampled Knudsen flow reactor coupled to vacuum ultraviolet single photon ionization mass spectrometry using an external free radical source

    SciTech Connect (OSTI)

    Leplat, N.; Rossi, M. J.

    2013-11-15

    A new apparatus using vacuum ultraviolet single photon ionization mass spectrometry (VUV SPIMS) of an effusive molecular beam emanating from a Knudsen flow reactor is described. It was designed to study free radical-molecule kinetics over a significant temperature range (300630 K). Its salient features are: (1) external free radical source, (2) counterpropagating molecular beam and diffuse VUV photon beam meeting in a crossed-beam ion source of a quadrupole mass spectrometer with perpendicular ion extraction, (3) analog detection of the photocurrent of the free radical molecular cation, and (4) possibility of detecting both free radicals and closed shell species in the same apparatus and under identical reaction conditions owing to the presence of photoelectrons generated by the photoelectric effect of the used VUV-photons. The measured thermal molecular beam-to-background ratio was 6.35 0.39 for Ar and 10.86 1.59 for i-C{sub 4}H{sub 10} at 300 K, a factor of 2.52 and 1.50 smaller, respectively, than predicted from basic gas-dynamic considerations. Operating parameters as well as the performance of key elements of the instrument are presented and discussed. Coupled to an external free radical source a steady-state specific exit flow of 1.6 10{sup 11} and 5.0 10{sup 11} molecule s{sup ?1} cm{sup ?3} of C{sub 2}H{sub 5}{sup } (ethyl) and t-C{sub 4}H{sub 9}{sup } (t-butyl) free radicals have been detected using VUV SPIMS at their molecular ion m/z 29 and 57, respectively, at 300 K.

  15. Initiation and early evolution of the coronal mass ejection on 2009 May 13 from extreme-ultraviolet and white-light observations

    SciTech Connect (OSTI)

    Reva, A. A.; Ulyanov, A. S.; Bogachev, S. A.; Kuzin, S. V.

    2014-10-01

    We present the results of the observations of a coronal mass ejection (CME) that occurred on 2009 May 13. The most important feature of these observations is that the CME was observed from the very early stage (the solar surface) up to a distance of 15 solar radii (R {sub ?}). Below 2 R {sub ?}, we used the data from the TESIS extreme-ultraviolet telescopes obtained in the Fe 171 and He 304 lines, and above 2 R {sub ?}, we used the observations of the LASCO C2 and C3 coronagraphs. The CME was formed at a distance of 0.2-0.5R {sub ?} from the Sun's surface as a U-shaped structure, which was observed both in the 171 images and in the white light. Observations in the He 304 line showed that the CME was associated with an erupting prominence, which was not located aboveas the standard model predictsbut rather in the lowest part of the U-shaped structure close to the magnetic X point. The prominence location can be explained with the CME breakout model. Estimates showed that CME mass increased with time. The CME trajectory was curvedits heliolatitude decreased with time. The CME started at a latitude of 50 and reached the ecliptic plane at distances of 2.5 R {sub ?}. The CME kinematics can be divided into three phases: initial acceleration, main acceleration, and propagation with constant velocity. After the CME, onset GOES registered a sub-A-class flare.

  16. Investigating nearby star-forming galaxies in the ultraviolet with HST/COS spectroscopy. I. Spectral analysis and interstellar abundance determinations

    SciTech Connect (OSTI)

    James, B. L.; Aloisi, A.; Sohn, S. T.; Wolfe, M. A.; Heckman, T.

    2014-11-10

    This is the first in a series of three papers describing a project with the Cosmic Origins Spectrograph on the Hubble Space Telescope to measure abundances of the neutral interstellar medium (ISM) in a sample of nine nearby star-forming galaxies. The goal is to assess the (in)homogeneities of the multiphase ISM in galaxies where the bulk of metals can be hidden in the neutral phase, yet the metallicity is inferred from the ionized gas in the H II regions. The sample, spanning a wide range in physical properties, is to date the best suited to investigate the metallicity behavior of the neutral gas at redshift z = 0. ISM absorption lines were detected against the far-ultraviolet spectra of the brightest star-forming region(s) within each galaxy. Here we report on the observations, data reduction, and analysis of these spectra. Column densities were measured by a multicomponent line-profile fitting technique, and neutral-gas abundances were obtained for a wide range of elements. Several caveats were considered, including line saturation, ionization corrections, and dust depletion. Ionization effects were quantified with ad hoc CLOUDY models reproducing the complex photoionization structure of the ionized and neutral gas surrounding the UV-bright sources. An 'average spectrum of a redshift z = 0 star-forming galaxy' was obtained from the average column densities of unsaturated profiles of neutral-gas species. This template can be used as a powerful tool for studies of the neutral ISM at both low and high redshift.

  17. EVIDENCE FOR THE WAVE NATURE OF AN EXTREME ULTRAVIOLET WAVE OBSERVED BY THE ATMOSPHERIC IMAGING ASSEMBLY ON BOARD THE SOLAR DYNAMICS OBSERVATORY

    SciTech Connect (OSTI)

    Shen Yuandeng; Liu Yu

    2012-07-20

    Extreme-ultraviolet (EUV) waves have been found for about 15 years. However, significant controversy remains over their physical natures and origins. In this paper, we report an EUV wave that was accompanied by an X1.9 flare and a partial halo coronal mass ejection (CME). Using high temporal and spatial resolution observations taken by the Solar Dynamics Observatory and the Solar-TErrestrial RElations Observatory, we are able to investigate the detailed kinematics of the EUV wave. We find several arguments that support the fast-mode wave scenario. (1) The speed of the EUV wave (570 km s{sup -1}) is higher than the sound speed of the quiet-Sun corona. (2) Significant deceleration of the EUV wave (-130 m s{sup -2}) is found during its propagation. (3) The EUV wave resulted in the oscillations of a loop and a filament along its propagation path, and a reflected wave from the polar coronal hole is also detected. (4) Refraction or reflection effect is observed when the EUV wave was passing through two coronal bright points. (5) The dimming region behind the wavefront stopped to expand when the wavefront started to become diffuse. (6) The profiles of the wavefront exhibited a dispersive nature, and the magnetosonic Mach number of the EUV wave derived from the highest intensity jump is about 1.4. In addition, triangulation indicates that the EUV wave propagated within a height range of about 60-100 Mm above the photosphere. We propose that the EUV wave observed should be a nonlinear fast-mode magnetosonic wave that propagated freely in the corona after it was driven by the CME expanding flanks during the initial period.

  18. Line spectrum and ion temperature measurements from tungsten ions at low ionization stages in large helical device based on vacuum ultraviolet spectroscopy in wavelength range of 5002200

    SciTech Connect (OSTI)

    Oishi, T. Morita, S.; Goto, M.; Huang, X. L.; Zhang, H. M.

    2014-11-15

    Vacuum ultraviolet spectra of emissions released from tungsten ions at lower ionization stages were measured in the Large Helical Device (LHD) in the wavelength range of 5002200 using a 3 m normal incidence spectrometer. Tungsten ions were distributed in the LHD plasma by injecting a pellet consisting of a small piece of tungsten metal and polyethylene tube. Many lines having different wavelengths from intrinsic impurity ions were observed just after the tungsten pellet injection. Doppler broadening of a tungsten candidate line was successfully measured and the ion temperature was obtained.

  19. Space-resolved extreme ultraviolet spectroscopy free of high-energy neutral particle noise in wavelength range of 10130 on the large helical device

    SciTech Connect (OSTI)

    Huang, Xianli; Morita, Shigeru; Oishi, Tetsutarou; Goto, Motoshi; National Institute for Fusion Science, Toki 509-5292 Gifu ; Dong, Chunfeng

    2014-04-15

    A flat-field space-resolved extreme ultraviolet (EUV) spectrometer system working in wavelength range of 10130 has been constructed in the Large Helical Device (LHD) for profile measurements of bremsstrahlung continuum and line emissions of heavy impurities in the central column of plasmas, which are aimed at studies on Z{sub eff} and impurity transport, respectively. Until now, a large amount of spike noise caused by neutral particles with high energies (?180 keV) originating in neutral beam injection has been observed in EUV spectroscopy on LHD. The new system has been developed with an aim to delete such a spike noise from the signal by installing a thin filter which can block the high-energy neutral particles entering the EUV spectrometer. Three filters of 11 ?m thick beryllium (Be), 3.3 ?m thick polypropylene (PP), and 0.5 ?m thick polyethylene terephthalate (PET: polyester) have been examined to eliminate the spike noise. Although the 11 ?m Be and 3.3 ?m PP filters can fully delete the spike noise in wavelength range of ? ? 20 , the signal intensity is also reduced. The 0.5 ?m PET filter, on the other hand, can maintain sufficient signal intensity for the measurement and the spike noise remained in the signal is acceptable. As a result, the bremsstrahlung profile is successfully measured without noise at 20 even in low-density discharges, e.g., 2.9 10{sup 13} cm{sup ?3}, when the 0.5 ?m PET filter is used. The iron n = 32 L? transition array consisting of FeXVII to FeXXIV is also excellently observed with their radial profiles in wavelength range of 1018 . Each transition in the L? array can be accurately identified with its radial profile. As a typical example of the method a spectral line at 17.62 is identified as FeXVIII transition. Results on absolute intensity calibration of the spectrometer system, pulse height and noise count analyses of the spike noise between holographic and ruled gratings and wavelength response of the used filters are also presented with performance of the present spectrometer system.

  20. Soft lithography microlens fabrication and array for enhanced...

    Office of Scientific and Technical Information (OSTI)

    Ames, IA (United States) Sponsoring Org: USDOE Country of Publication: United States Language: English Subject: 32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION; 42 ENGINEERING...

  1. Soft lithography microlens fabrication and array for enhanced...

    Office of Scientific and Technical Information (OSTI)

    Sponsoring Org: USDOE Country of Publication: United States Language: English Subject: 32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION; 42 ENGINEERING Word Cloud More Like...

  2. Extreme-UV lithography vacuum chamber zone seal

    DOE Patents [OSTI]

    Haney, Steven J. (Tracy, CA); Herron, Donald Joe (Manteca, CA); Klebanoff, Leonard E. (San Ramon, CA); Replogle, William C. (Livermore, CA)

    2003-04-15

    Control of particle contamination on the reticle and carbon contamination of optical surfaces in photolithography systems can be achieved by the establishment of multiple pressure zones in the photolithography systems. The different zones will enclose the reticle, projection optics, wafer, and other components of system. The system includes a vacuum apparatus that includes: a housing defining a vacuum chamber; one or more metrology trays situated within the vacuum chamber each of which is supported by at least one support member, wherein the tray separates the vacuum chamber into a various compartments that are maintained at different pressures; and conductance seal devices for adjoining the perimeter of each tray to an inner surface of the housing wherein the tray is decoupled from vibrations emanating from the inner surface of the housing.

  3. Extreme-UV lithography vacuum chamber zone seal

    DOE Patents [OSTI]

    Haney, Steven J. (Tracy, CA); Herron, Donald Joe (Manteca, CA); Klebanoff, Leonard E. (San Ramon, CA); Replogle, William C. (Livermore, CA)

    2003-04-08

    Control of particle contamination on the reticle and carbon contamination of optical surfaces in photolithography systems can be achieved by the establishment of multiple pressure zones in the photolithography systems. The different zones will enclose the reticle, projection optics, wafer, and other components of system. The system includes a vacuum apparatus that includes: a housing defining a vacuum chamber; one or more metrology trays situated within the vacuum chamber each of which is supported by at least one support member, wherein the tray separates the vacuum chamber into a various compartments that are maintained at different pressures; and conductance seal devices for adjoining the perimeter of each tray to an inner surface of the housing wherein the tray is decoupled from vibrations emanating from the inner surface of the housing.

  4. Extreme-UV lithography vacuum chamber zone seal

    DOE Patents [OSTI]

    Haney, Steven J. (Tracy, CA); Herron, Donald Joe (Manteca, CA); Klebanoff, Leonard E. (San Ramon, CA); Replogle, William C. (Livermore, CA)

    2001-01-01

    Control of particle contamination on the reticle and carbon contamination of optical surfaces in photolithography systems can be achieved by the establishment of multiple pressure zones in the photolithography systems. The different zones will enclose the reticle, projection optics, wafer, and other components of system. The system includes a vacuum apparatus that includes: a housing defining a vacuum chamber; one or more metrology trays situated within the vacuum chamber each of which is supported by at least one support member, wherein the tray separates the vacuum chamber into a various compartments that are maintained at different pressures; and conductance seal devices for adjoining the perimeter of each tray to an inner surface of the housing wherein the tray is decoupled from vibrations emanating from the inner surface of the housing.

  5. High-efficiency spectral purity filter for EUV lithography

    DOE Patents [OSTI]

    Chapman, Henry N.

    2006-05-23

    An asymmetric-cut multilayer diffracts EUV light. A multilayer cut at an angle has the same properties as a blazed grating, and has been demonstrated to have near-perfect performance. Instead of having to nano-fabricate a grating structure with imperfections no greater than several tens of nanometers, a thick multilayer is grown on a substrate and then cut at an inclined angle using coarse and inexpensive methods. Effective grating periods can be produced this way that are 10 to 100 times smaller than those produced today, and the diffraction efficiency of these asymmetric multilayers is higher than conventional gratings. Besides their ease of manufacture, the use of an asymmetric multilayer as a spectral purity filter does not require that the design of an EUV optical system be modified in any way, unlike the proposed use of blazed gratings for such systems.

  6. Biomedical devices from ultraviolet LEDs

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Team Leader Alberto Paleari University of Milano-Bicocca in Italy Such devices ... at the University of Milano-Bicocca in Italy describe a fabrication process that ...

  7. SECONDARY WAVES AND/OR THE 'REFLECTION' FROM AND 'TRANSMISSION' THROUGH A CORONAL HOLE OF AN EXTREME ULTRAVIOLET WAVE ASSOCIATED WITH THE 2011 FEBRUARY 15 X2.2 FLARE OBSERVED WITH SDO/AIA AND STEREO/EUVI

    SciTech Connect (OSTI)

    Olmedo, Oscar; Vourlidas, Angelos; Zhang Jie; Cheng Xin

    2012-09-10

    For the first time, the kinematic evolution of a coronal wave over the entire solar surface is studied. Full Sun maps can be made by combining images from the Solar Terrestrial Relations Observatory satellites, Ahead and Behind, and the Solar Dynamics Observatory, thanks to the wide angular separation between them. We study the propagation of a coronal wave, also known as the 'Extreme Ultraviolet Imaging Telescope' wave, and its interaction with a coronal hole (CH) resulting in secondary waves and/or reflection and transmission. We explore the possibility of the wave obeying the law of reflection. In a detailed example, we find that a loop arcade at the CH boundary cascades and oscillates as a result of the extreme ultraviolet (EUV) wave passage and triggers a wave directed eastward that appears to have reflected. We find that the speed of this wave decelerates to an asymptotic value, which is less than half of the primary EUV wave speed. Thanks to the full Sun coverage we are able to determine that part of the primary wave is transmitted through the CH. This is the first observation of its kind. The kinematic measurements of the reflected and transmitted wave tracks are consistent with a fast-mode magnetohydrodynamic wave interpretation. Eventually, all wave tracks decelerate and disappear at a distance. A possible scenario of the whole process is that the wave is initially driven by the expanding coronal mass ejection and subsequently decouples from the driver and then propagates at the local fast-mode speed.

  8. Beamline 3.2.1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2.1 Print Commercial deep-etch x-ray lithography (LIGA) GENERAL BEAMLINE INFORMATION Operational Yes, but not open to users Source characteristics Bend magnet Energy range 3-12 keV Monochromator None Endstations Hutch with automated scanner Calculated spot size at sample 100 x 10 mm Sample format 3- and 4-in. wafer format; x-ray mask and LIGA substrate Sample environment Ambient, air Scientific disciplines Applied science Scientific applications Deep-etch x-ray lithography (LIGA) Spokesperson

  9. Beamline 3.2.1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2.1 Print Commercial deep-etch x-ray lithography (LIGA) GENERAL BEAMLINE INFORMATION Operational Yes, but not open to users Source characteristics Bend magnet Energy range 3-12 keV Monochromator None Endstations Hutch with automated scanner Calculated spot size at sample 100 x 10 mm Sample format 3- and 4-in. wafer format; x-ray mask and LIGA substrate Sample environment Ambient, air Scientific disciplines Applied science Scientific applications Deep-etch x-ray lithography (LIGA) Spokesperson

  10. Beamline 3.2.1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2.1 Print Commercial deep-etch x-ray lithography (LIGA) GENERAL BEAMLINE INFORMATION Operational Yes, but not open to users Source characteristics Bend magnet Energy range 3-12 keV Monochromator None Endstations Hutch with automated scanner Calculated spot size at sample 100 x 10 mm Sample format 3- and 4-in. wafer format; x-ray mask and LIGA substrate Sample environment Ambient, air Scientific disciplines Applied science Scientific applications Deep-etch x-ray lithography (LIGA) Spokesperson

  11. Beamline 3.2.1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2.1 Print Commercial deep-etch x-ray lithography (LIGA) GENERAL BEAMLINE INFORMATION Operational Yes, but not open to users Source characteristics Bend magnet Energy range 3-12 keV Monochromator None Endstations Hutch with automated scanner Calculated spot size at sample 100 x 10 mm Sample format 3- and 4-in. wafer format; x-ray mask and LIGA substrate Sample environment Ambient, air Scientific disciplines Applied science Scientific applications Deep-etch x-ray lithography (LIGA) Spokesperson

  12. Beamline 3.2.1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2.1 Print Commercial deep-etch x-ray lithography (LIGA) GENERAL BEAMLINE INFORMATION Operational Yes, but not open to users Source characteristics Bend magnet Energy range 3-12 keV Monochromator None Endstations Hutch with automated scanner Calculated spot size at sample 100 x 10 mm Sample format 3- and 4-in. wafer format; x-ray mask and LIGA substrate Sample environment Ambient, air Scientific disciplines Applied science Scientific applications Deep-etch x-ray lithography (LIGA) Spokesperson

  13. Beamline 3.2.1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2.1 Print Commercial deep-etch x-ray lithography (LIGA) GENERAL BEAMLINE INFORMATION Operational Yes, but not open to users Source characteristics Bend magnet Energy range 3-12 keV Monochromator None Endstations Hutch with automated scanner Calculated spot size at sample 100 x 10 mm Sample format 3- and 4-in. wafer format; x-ray mask and LIGA substrate Sample environment Ambient, air Scientific disciplines Applied science Scientific applications Deep-etch x-ray lithography (LIGA) Spokesperson

  14. Sub-250?nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO{sub 2}/SiO{sub 2} dielectric mirrors

    SciTech Connect (OSTI)

    Kao, Tsung-Ting; Liu, Yuh-Shiuan; Mahbub Satter, Md.; Li, Xiao-Hang; Lochner, Zachary; Douglas Yoder, P.; Detchprohm, Theeradetch; Dupuis, Russell D.; Shen, Shyh-Chiang Ryou, Jae-Hyun; Fischer, Alec M.; Wei, Yong; Xie, Hongen; Ponce, Fernando A.

    2013-11-18

    We report a sub-250-nm, optically pumped, deep-ultraviolet laser using an Al{sub x}Ga{sub 1?x}N-based multi-quantum-well structure grown on a bulk Al-polar c-plane AlN substrate. TE-polarization-dominant lasing action was observed at room temperature with a threshold pumping power density of 250?kW/cm{sup 2}. After employing high-reflectivity SiO{sub 2}/HfO{sub 2} dielectric mirrors on both facets, the threshold pumping power density was further reduced to 180?kW/cm{sup 2}. The internal loss and threshold modal gain can be calculated as 2?cm{sup ?1} and 10.9?cm{sup ?1}, respectively.

  15. Reduced ultraviolet light induced degradation and enhanced light harvesting using YVO{sub 4}:Eu{sup 3+} down-shifting nano-phosphor layer in organometal halide perovskite solar cells

    SciTech Connect (OSTI)

    Chander, Nikhil; Chandrasekhar, P. S.; Thouti, Eshwar; Swami, Sanjay Kumar; Dutta, Viresh; Komarala, Vamsi K.; Khan, A. F.

    2014-07-21

    We report a simple method to mitigate ultra-violet (UV) degradation in TiO{sub 2} based perovskite solar cells (PSC) using a transparent luminescent down-shifting (DS) YVO{sub 4}:Eu{sup 3+} nano-phosphor layer. The PSC coated with DS phosphor showed an improvement in stability under prolonged illumination retaining more than 50% of its initial efficiency, whereas PSC without the phosphor layer degraded to ?35% of its initial value. The phosphor layer also provided ?8.5% enhancement in photocurrent due to DS of incident UV photons into additional red photons. YVO{sub 4}:Eu{sup 3+} layer thus served a bi-functional role in PSC by reducing photo-degradation as well as enhancing energy conversion efficiency.

  16. Intrinsic relationship between electronic structures and phase transition of SrBi{sub 2?x}Nd{sub x}Nb{sub 2}O{sub 9} ceramics from ultraviolet ellipsometry at elevated temperatures

    SciTech Connect (OSTI)

    Duan, Z. H.; Jiang, K.; Xu, L. P.; Li, Y. W.; Hu, Z. G. Chu, J. H.

    2014-02-07

    The ferroelectric orthorhombic to paraelectric tetragonal phase transition of SrBi{sub 2?x}Nd{sub x}Nb{sub 2}O{sub 9} (x?=?0, 0.05, 0.1, and 0.2) layer-structured ceramics has been investigated by temperature-dependent spectroscopic ellipsometry. Based on the analysis of dielectric functions from 0 to 500?C with double Tauc-Lorentz dispersion model, the interband transitions located at ultraviolet region have shown an abrupt variation near the Curie temperature. The changes of dielectric functions are mainly due to the thermal-optical and/or photoelastic effect. Moreover, the characteristic alteration in interband transitions can be ascribed to distortion of NbO{sub 6} octahedron and variation of hybridization between Bi 6s and O 2p states during the structure transformation.

  17. Large scale two-dimensional arrays of magnesium diboride superconducting quantum interference devices

    SciTech Connect (OSTI)

    Cybart, Shane A. Dynes, R. C.; Wong, T. J.; Cho, E. Y.; Beeman, J. W.; Yung, C. S.; Moeckly, B. H.

    2014-05-05

    Magnetic field sensors based on two-dimensional arrays of superconducting quantum interference devices were constructed from magnesium diboride thin films. Each array contained over 30?000 Josephson junctions fabricated by ion damage of 30?nm weak links through an implant mask defined by nano-lithography. Current-biased devices exhibited very large voltage modulation as a function of magnetic field, with amplitudes as high as 8?mV.

  18. Masked Areas in Shear Peak Statistics: A Forward Modeling Approach...

    Office of Scientific and Technical Information (OSTI)

    (SLAC) Sponsoring Org: US DOE Office of Science (DOE SC) Country of Publication: United States Language: English Subject: ASTRO Word Cloud More Like This Full Text preview ...

  19. Method for masking selected regions of a substrate

    DOE Patents [OSTI]

    Fusaro, Jr., Robert Anthony; Bethel, Timothy Francis

    2010-05-04

    Described herein is a method for providing a clean edge at the interface of a portion of a substrate coated with a coating system and an adjacent portion of the substrate which is uncoated. The method includes the step of forming a zone of non-adherence on the substrate portion which is to be uncoated, prior to application of the coating system. The zone of non-adherence is adjacent the interface, so that the coating system will not adhere to the zone of non-adherence, but will adhere to the portion of the substrate which is to be coated with the coating system.

  20. The pilus usher controls protein interactions via domain masking...

    Office of Scientific and Technical Information (OSTI)

    Date: 2015-06-08 OSTI Identifier: 1215608 Report Number(s): BNL--108346-2015-JA Journal ID: ISSN 1545-9993; 600301010 GrantContract Number: SC00112704 Type: Accepted...

  1. RADIOISOTOPE IDENTIFICATION OF SHIELDED AND MASKED SNM RDD MATERIALS

    SciTech Connect (OSTI)

    Salaymeh, S.; Jeffcoat, R.

    2010-06-17

    Sonar and speech techniques have been investigated to improve functionality and enable handheld and other man-portable, mobile, and portal systems to positively detect and identify illicit nuclear materials, with minimal data and with minimal false positives and false negatives. RadSonar isotope detection and identification is an algorithm development project funded by NA-22 and employing the resources of Savannah River National Laboratory and three University Laboratories (JHU-APL, UT-ARL, and UW-APL). Algorithms have been developed that improve the probability of detection and decrease the number of false positives and negatives. Two algorithms have been developed and tested. The first algorithm uses support vector machine (SVM) classifiers to determine the most prevalent nuclide(s) in a spectrum. It then uses a constrained weighted least squares fit to estimate and remove the contribution of these nuclide(s) to the spectrum, iterating classification and fitting until there is nothing of significance left. If any Special Nuclear Materials (SNMs) were detected in this process, a second tier of more stringent classifiers are used to make the final SNM alert decision. The second algorithm is looking at identifying existing feature sets that would be relevant in the radioisotope identification context. The underlying philosophy here is to identify parallels between the physics and/or the structures present in the data for the two applications (speech analysis and gamma spectroscopy). The expectation is that similar approaches may work in both cases. The mel-frequency cepstral representation of spectra is widely used in speech, particularly for two reasons: approximation of the response of the human ear, and simplicity of channel effect separation (in this context, a 'channel' is a method of signal transport that affects the signal, examples being vocal tract shape, room echoes, and microphone response). Measured and simulated gamma-ray spectra from a hand-held Radioisotope Identification Device were used to evaluate the algorithms. This paper will present and discuss results of the Test and Evaluation performed on two algorithms produced from the project.

  2. Comparison of the vacuum-ultraviolet radiation response of HfO{sub 2}/SiO{sub 2}/Si dielectric stacks with SiO{sub 2}/Si

    SciTech Connect (OSTI)

    Upadhyaya, G. S.; Shohet, J. L.

    2007-02-12

    Vacuum ultraviolet (vuv) emitted during plasma processing degrades dielectrics by generating electron-hole pairs. VUV-induced charging of SiO{sub 2}/p-Si and HfO{sub 2}/SiO{sub 2}/p-Si dielectric stacks are compared. For SiO{sub 2}/p-Si, charging is observed for photon energies >15 eV by ionization of dielectric atoms from photoinjected electrons. In HfO{sub 2}/SiO{sub 2}/p-Si, charging is observed for photon >10 eV and is due to ionization by photoinjected electrons and by H{sup +} trapping in the HfO{sub 2}/SiO{sub 2} bulk. Hydrogen appears during annealing at the Si-SiO{sub 2} interface forming Si-H, which, during irradiation, is depassivated by photoinjected electrons. The authors conclude that dielectric charging in thin oxides (<10 nm) occurs more easily in HfO{sub 2}/SiO{sub 2} than in SiO{sub 2}.

  3. Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

    SciTech Connect (OSTI)

    Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo

    2014-10-27

    We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

  4. Multilayer films with sharp, stable interfaces for use in EUV and soft X-ray application

    DOE Patents [OSTI]

    Barbee, Jr., Troy W.; Bajt, Sasa

    2002-01-01

    The reflectivity and thermal stability of Mo/Si (molybdenum/silicon) multilayer films, used in soft x-ray and extreme ultraviolet region, is enhanced by deposition of a thin layer of boron carbide (e.g., B.sub.4 C) between alternating layers of Mo and Si. The invention is useful for reflective coatings for soft X-ray and extreme ultraviolet optics, multilayer for masks, coatings for other wavelengths and multilayers for masks that are more thermally stable than pure Mo/Si multilayers

  5. Electronic Structure and Optical Properties of Cu2ZnGeSe4. First-Principles Calculations and Vacuum-Ultraviolet Spectroscopic Ellipsometric Studies

    SciTech Connect (OSTI)

    Choi, Sukgeun; Park, Ji-Sang; Donohue, Andrea; Christensen, Steven T.; To, Bobby; Beall, Carolyn; Wei, Su-Huai; Repins, Ingid L.

    2015-11-19

    Cu2ZnGeSe4 is of interest for the development of next-generation thin-film photovoltaic technologies. To understand its electronic structure and related fundamental optical properties, we perform first-principles calculations for three structural variations: kesterite, stannite, and primitive-mixed CuAu phases. The calculated data are compared with the room-temperature dielectric function?=?1+i?2 spectrum of polycrystalline Cu2ZnGeSe4 determined by vacuum-ultraviolet spectroscopic ellipsometry in the photon-energy range of 0.7 to 9.0 eV. Ellipsometric data are modeled with the sum of eight Tauc-Lorentz oscillators, and the best-fit model yields the band-gap and Tauc-gap energies of 1.25 and 1.19 eV, respectively. A comparison of overall peak shapes and relative intensities between experimental spectra and the calculated ? data for three structural variations suggests that the sample may not have a pure (ordered) kesterite phase. We found that the complex refractive index N=n+ik, normal-incidence reflectivity R, and absorption coefficients ? are calculated from the modeled ? spectrum, which are also compared with those of Cu2ZnSnSe4 . The spectral features for Cu2ZnGeSe4 appear to be weaker and broader than those for Cu2ZnSnSe4 , which is possibly due to more structural imperfections presented in Cu2ZnGeSe4 than Cu2ZnSnSe4 .

  6. Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

    SciTech Connect (OSTI)

    Szyszka, A. E-mail: adam.szyszka@pwr.wroc.pl; Haeberlen, M.; Storck, P.; Thapa, S. B.; Schroeder, T.

    2014-08-28

    Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y{sub 2}O{sub 3} films is detected under the applied thermal growth budget. As revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated thatwith respect to the basic GaN/oxide/Si system without DBRthe insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.

  7. Preparation and spectroscopic properties of rare-earth (RE) (RE = Sm, Eu, Tb, Dy, Tm)-activated K{sub 2}LnZr(PO{sub 4}){sub 3} (Ln = Y, La, Gd and Lu) phosphate in vacuum ultraviolet region

    SciTech Connect (OSTI)

    Zhang, Zhi-Jun; Lin, Xiao; Graduate School of Chinese Academy of Science, Beijing, 100039 ; Zhao, Jing-Tai; Zhang, Guo-Bin

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ? We report the VUV spectroscopic properties of rare-earth ions in K{sub 2}LnZr(PO{sub 4}){sub 3}. ? The O{sup 2?}-Eu{sup 3+} charge transfer bands at about 220 nm have been observed. ? The 4f5d spin-allowed and spin-forbidden transitions of Tb{sup 3+} have been observed. ? There is energy transfer between the host and rare-earth activators. -- Abstract: Rare earth (RE = Sm, Eu, Tb, Dy and Tm)-activated K{sub 2}LnZr(PO{sub 4}){sub 3} (Ln = Y, La, Gd and Lu) have been synthesized by solid-state reaction method, and their vacuum ultraviolet (VUV) excitation luminescent characteristics have been investigated. The band in the wavelength range of 130157 nm and the other one range from 155 to 216 nm with the maximum at about 187 nm in the VUV excitation spectra of these compounds are attributed to the host lattice absorption and OZr charge transfer transition, respectively. The charge transfer bands (CTB) of O{sup 2?}-Sm{sup 3+}, O{sup 2?}-Dy{sup 3+} and O{sup 2?}-Tm{sup 3+}, in Sm{sup 3+}, Dy{sup 3+} and Tm{sup 3+}-activated samples, have not been obviously observed probably because the 2p electrons of oxygen are tightly bound to the zirconium ion in the host lattice. For Eu{sup 3+}-activated samples, the relatively weak O{sup 2?}-Eu{sup 3+} CTB at about 220 nm is observed. And for Tb{sup 3+}-activated samples, the bands at 223 and 258 nm are related to the 4f-5d spin-allowed and spin-forbidden transitions of Tb{sup 3+}, respectively. It is observed that there is energy transfer between the host lattice and the luminescent activators (e.g. Eu{sup 3+}, Tb{sup 3+}). From the standpoint of luminescent efficiency, color purity and chemical stability, K{sub 2}GdZr(PO{sub 4}){sub 3}:Sm{sup 3+}, Eu{sup 3+}, Tb{sup 3+} are attractive candidates for novel yellow, red, green-emitting PDP phosphors.

  8. The SEMATECH Berkeley MET pushing EUV development beyond 22-nm half pitch

    SciTech Connect (OSTI)

    Naulleau, P.; Anderson, C. N.; Backlea-an, L.-M.; Chan, D.; Denham, P.; George, S.; Goldberg, K. A.; Hoef, B.; Jones, G.; Koh, C.; La Fontaine, B.; McClinton, B.; Miyakawa, R.; Montgomery, W.; Rekawa, S.; Wallow, T.

    2010-03-18

    Microfield exposure tools (METs) play a crucial role in the development of extreme ultraviolet (EUV) resists and masks, One of these tools is the SEMATECH Berkeley 0.3 numerical aperture (NA) MET, Using conventional illumination this tool is limited to approximately 22-nm half pitch resolution. However, resolution enhancement techniques have been used to push the patterning capabilities of this tool to half pitches of 18 nm and below, This resolution was achieved in a new imageable hard mask which also supports contact printing down to 22 nm with conventional illumination. Along with resolution, line-edge roughness is another crucial hurdle facing EUV resists, Much of the resist LER, however, can be attributed to the mask. We have shown that intenssionally aggressive mask cleaning on an older generation mask causes correlated LER in photoresist to increase from 3.4 nm to 4,0 nm, We have also shown that new generation EUV masks (100 pm of substrate roughness) can achieve correlated LER values of 1.1 nm, a 3x improvement over the correlated LER of older generation EUV masks (230 pm of substrate roughness), Finally, a 0.5-NA MET has been proposed that will address the needs of EUV development at the 16-nm node and beyond, The tool will support an ultimate resolution of 8 nm half-pitch and generalized printing using conventional illumination down to 12 nm half pitch.

  9. Spatially addressable design of gradient index structures through spatial light modulator based holographic lithography

    SciTech Connect (OSTI)

    Ohlinger, Kris; Lutkenhaus, Jeff [Department of Physics, University of North Texas, Denton, Texas 76203 (United States); Arigong, Bayaner; Zhang, Hualiang [Department of Electrical Engineering, University of North Texas, Denton, Texas 76203 (United States); Lin, Yuankun, E-mail: yuankun.lin@unt.edu [Department of Physics, University of North Texas, Denton, Texas 76203 (United States); Department of Electrical Engineering, University of North Texas, Denton, Texas 76203 (United States)

    2013-12-07

    In this paper, we present an achievable gradient refractive index in bi-continuous holographic structures that are formed through five-beam interference. We further present a theoretic approach for the realization of gradient index devices by engineering the phases of the interfering beams with a pixelated spatial light modulator. As an example, the design concept of a gradient index Luneburg lens is verified through full-wave electromagnetic simulations. These five beams with desired phases can be generated through programming gray level super-cells in a diffractive spatial light modulator. As a proof-of-concept, gradient index structures are demonstrated using synthesized and gradient phase patterns displayed in the spatial light modulator.

  10. Soft X-Ray Lithography for High-Aspect Ratio Sub-Micrometer

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    fr Materialien und Energie GmbH, Institute for Nanometre Optics and Technology, Albert-Einstein-Str. 15, 12489 Berlin, Germany b Center for Advanced Microstructures &...

  11. EUV lithography reticles fabricated without the use of a patterned absorber

    DOE Patents [OSTI]

    Stearns, Daniel G.; Sweeney, Donald W.; Mirkarimi, Paul B.

    2006-05-23

    Absorber material used in conventional EUVL reticles is eliminated by introducing a direct modulation in the complex-valued reflectance of the multilayer. A spatially localized energy source such as a focused electron or ion beam directly writes a reticle pattern onto the reflective multilayer coating. Interdiffusion is activated within the film by an energy source that causes the multilayer period to contract in the exposed regions. The contraction is accurately determined by the energy dose. A controllable variation in the phase and amplitude of the reflected field in the reticle plane is produced by the spatial modulation of the multilayer period. This method for patterning an EUVL reticle has the advantages (1) avoiding the process steps associated with depositing and patterning an absorber layer and (2) providing control of the phase and amplitude of the reflected field with high spatial resolution.

  12. Ultrahigh density ferroelectric storage and lithography by high order ferroic switching

    DOE Patents [OSTI]

    Kalinin, Sergei V. (Knoxville, TN); Baddorf, Arthur P. (Knoxville, TN); Lee, Ho Nyung (Oak Ridge, TN); Shin, Junsoo (Knoxville, TN); Gruverman, Alexei L. (Raleigh, NC); Karapetian, Edgar (Malden, MA); Kachanov, Mark (Arlington, MA)

    2007-11-06

    A method for switching the direction of polarization in a relatively small domain in a thin-film ferroelectric material whose direction of polarization is oriented normal to the surface of the material involves a step of moving an electrically-chargeable tip into contact with the surface of the ferroelectric material so that the direction of polarization in a region adjacent the tip becomes oriented in a preselected direction relative to the surface of the ferroelectric material. The tip is then pressed against the surface of the ferroelectric material so that the direction of polarization of the ferroelectric material within the area of the ferroelectric material in contact with the tip is reversed under the combined effect of the compressive influence of the tip and electric bias.

  13. Beamline 11.3.2

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1.3.2 Print Inspection of EUV lithography masks GENERAL BEAMLINE INFORMATION Operational Yes, but not open to users Source characteristics Bend magnet Energy range 50-1000 eV Monochromator VLS-PGM Calculated flux (1.9 GeV, 400 mA) 1011 photons/s/0.01%BW at 100 eV Resolving power (E/ΔE) 7000 Endstations The SEMATECH Berkeley Actinic Inspection Tool Detector 2048 x 2048 EUV CCD Characteristics 900-1000x zoneplate microscope Spot size at sample 1-5 microns Spatial resolution 60 nm Sample format

  14. Beamline 11.3.2

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1.3.2 Print Inspection of EUV lithography masks GENERAL BEAMLINE INFORMATION Operational Yes, but not open to users Source characteristics Bend magnet Energy range 50-1000 eV Monochromator VLS-PGM Calculated flux (1.9 GeV, 400 mA) 1011 photons/s/0.01%BW at 100 eV Resolving power (E/ΔE) 7000 Endstations The SEMATECH Berkeley Actinic Inspection Tool Detector 2048 x 2048 EUV CCD Characteristics 900-1000x zoneplate microscope Spot size at sample 1-5 microns Spatial resolution 60 nm Sample format

  15. Beamline 11.3.2

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1.3.2 Print Inspection of EUV lithography masks GENERAL BEAMLINE INFORMATION Operational Yes, but not open to users Source characteristics Bend magnet Energy range 50-1000 eV Monochromator VLS-PGM Calculated flux (1.9 GeV, 400 mA) 1011 photons/s/0.01%BW at 100 eV Resolving power (E/ΔE) 7000 Endstations The SEMATECH Berkeley Actinic Inspection Tool Detector 2048 x 2048 EUV CCD Characteristics 900-1000x zoneplate microscope Spot size at sample 1-5 microns Spatial resolution 60 nm Sample format

  16. Beamline 11.3.2

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1.3.2 Print Inspection of EUV lithography masks GENERAL BEAMLINE INFORMATION Operational Yes, but not open to users Source characteristics Bend magnet Energy range 50-1000 eV Monochromator VLS-PGM Calculated flux (1.9 GeV, 400 mA) 1011 photons/s/0.01%BW at 100 eV Resolving power (E/ΔE) 7000 Endstations The SEMATECH Berkeley Actinic Inspection Tool Detector 2048 x 2048 EUV CCD Characteristics 900-1000x zoneplate microscope Spot size at sample 1-5 microns Spatial resolution 60 nm Sample format

  17. Beamline 11.3.2

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1.3.2 Print Inspection of EUV lithography masks GENERAL BEAMLINE INFORMATION Operational Yes, but not open to users Source characteristics Bend magnet Energy range 50-1000 eV Monochromator VLS-PGM Calculated flux (1.9 GeV, 400 mA) 1011 photons/s/0.01%BW at 100 eV Resolving power (E/ΔE) 7000 Endstations The SEMATECH Berkeley Actinic Inspection Tool Detector 2048 x 2048 EUV CCD Characteristics 900-1000x zoneplate microscope Spot size at sample 1-5 microns Spatial resolution 60 nm Sample format

  18. Beamline 11.3.2

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1.3.2 Print Inspection of EUV lithography masks GENERAL BEAMLINE INFORMATION Operational Yes, but not open to users Source characteristics Bend magnet Energy range 50-1000 eV Monochromator VLS-PGM Calculated flux (1.9 GeV, 400 mA) 1011 photons/s/0.01%BW at 100 eV Resolving power (E/ΔE) 7000 Endstations The SEMATECH Berkeley Actinic Inspection Tool Detector 2048 x 2048 EUV CCD Characteristics 900-1000x zoneplate microscope Spot size at sample 1-5 microns Spatial resolution 60 nm Sample format

  19. Beamline 11.3.2

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3.2 Beamline 11.3.2 Print Tuesday, 20 October 2009 09:23 Inspection of EUV lithography masks GENERAL BEAMLINE INFORMATION Operational Yes, but not open to users Source characteristics Bend magnet Energy range 50-1000 eV Monochromator VLS-PGM Calculated flux (1.9 GeV, 400 mA) 1011 photons/s/0.01%BW at 100 eV Resolving power (E/ΔE) 7000 Endstations The SEMATECH Berkeley Actinic Inspection Tool Detector 2048 x 2048 EUV CCD Characteristics 900-1000x zoneplate microscope Spot size at sample 1-5

  20. Beamline 11.3.2

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1.3.2 Print Inspection of EUV lithography masks GENERAL BEAMLINE INFORMATION Operational Yes, but not open to users Source characteristics Bend magnet Energy range 50-1000 eV Monochromator VLS-PGM Calculated flux (1.9 GeV, 400 mA) 1011 photons/s/0.01%BW at 100 eV Resolving power (E/ΔE) 7000 Endstations The SEMATECH Berkeley Actinic Inspection Tool Detector 2048 x 2048 EUV CCD Characteristics 900-1000x zoneplate microscope Spot size at sample 1-5 microns Spatial resolution 60 nm Sample format

  1. Beamline 11.3.2

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1.3.2 Print Inspection of EUV lithography masks GENERAL BEAMLINE INFORMATION Operational Yes, but not open to users Source characteristics Bend magnet Energy range 50-1000 eV Monochromator VLS-PGM Calculated flux (1.9 GeV, 400 mA) 1011 photons/s/0.01%BW at 100 eV Resolving power (E/ΔE) 7000 Endstations The SEMATECH Berkeley Actinic Inspection Tool Detector 2048 x 2048 EUV CCD Characteristics 900-1000x zoneplate microscope Spot size at sample 1-5 microns Spatial resolution 60 nm Sample format

  2. Large voltage modulation in magnetic field sensors from two-dimensional arrays of Y-Ba-Cu-O nano Josephson junctions

    SciTech Connect (OSTI)

    Cybart, Shane A. Dynes, R. C.; Cho, E. Y.; Wong, T. J.; Glyantsev, V. N.; Huh, J. U.; Yung, C. S.; Moeckly, B. H.; Beeman, J. W.; Ulin-Avila, E.; Wu, S. M.

    2014-02-10

    We have fabricated and tested two-dimensional arrays of YBa{sub 2}Cu{sub 3}O{sub 7??} superconducting quantum interference devices. The arrays contain over 36?000 nano Josephson junctions fabricated from ion irradiation of YBa{sub 2}Cu{sub 3}O{sub 7??} through narrow slits in a resist-mask that was patterned with electron beam lithography and reactive ion etching. Measurements of current-biased arrays in magnetic field exhibit large voltage modulations as high as 30?mV.

  3. Beamline 11.3.2

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1.3.2 Print Inspection of EUV lithography masks GENERAL BEAMLINE INFORMATION Operational Yes, but not open to users Source characteristics Bend magnet Energy range 50-1000 eV Monochromator VLS-PGM Calculated flux (1.9 GeV, 400 mA) 1011 photons/s/0.01%BW at 100 eV Resolving power (E/ΔE) 7000 Endstations The SEMATECH Berkeley Actinic Inspection Tool Detector 2048 x 2048 EUV CCD Characteristics 900-1000x zoneplate microscope Spot size at sample 1-5 microns Spatial resolution 60 nm Sample format

  4. LA 2001 complete

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    LIGHTING THE WAY - Keven Krenz (8420) briefly doffs his face mask for a photo at the chamber of the extreme ultra- violet lithography device where workers align light used to pattern circuits in this potential next-generation approach to microchip manufacturing. Sandia is making the EUVL tool as part of the largest-ever funds-in DOE CRADA ($250M over 5 yrs). See the EUVL entry below. (Photo by Randy Montoya) Toward the beginning of each calendar year the Lab News sums up Sandia National

  5. Mann 3600 Pattern Generator

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mann 3600 Pattern Generator Description: The GCA Mann 3600 pattern generator is designed for patterning standard 5" x 5" mask plates for use in optical lithography. Pattern designs are created in AutoCAD. The AutoCAD file is then converted into binary format, which can be fractured into data read by the pattern generator. The illumination source for exposures is a high pressure Hg arc lamp. The light is filtered and projected onto a shutter, which controls the exposure dose. A set of

  6. Plasma-based EUV light source

    DOE Patents [OSTI]

    Shumlak, Uri (Seattle, WA); Golingo, Raymond (Seattle, WA); Nelson, Brian A. (Mountlake Terrace, WA)

    2010-11-02

    Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time.

  7. Universal EUV in-band intensity detector

    DOE Patents [OSTI]

    Berger, Kurt W.

    2004-08-24

    Extreme ultraviolet light is detected using a universal in-band detector for detecting extreme ultraviolet radiation that includes: (a) an EUV sensitive photodiode having a diode active area that generates a current responsive to EUV radiation; (b) one or more mirrors that reflects EUV radiation having a defined wavelength(s) to the diode active area; and (c) a mask defining a pinhole that is positioned above the diode active area, wherein EUV radiation passing through the pinhole is restricted substantially to illuminating the diode active area.

  8. Applied Science/Techniques

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Applied Science/Techniques Print The ALS is an excellent incubator of new scientific techniques and instrumentation. Many of the technical advances that make the ALS a world-class soft x-ray facility are developed at the ALS itself. The optical components in use at the ALS-mirrors and lenses optimized for x-ray wavelengths-require incredibly high-precision surfaces and patterns (often formed through extreme ultraviolet lithography at the ALS) and must undergo rigorous calibration and testing

  9. Applied Science/Techniques

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Applied Science/Techniques Applied Science/Techniques Print The ALS is an excellent incubator of new scientific techniques and instrumentation. Many of the technical advances that make the ALS a world-class soft x-ray facility are developed at the ALS itself. The optical components in use at the ALS-mirrors and lenses optimized for x-ray wavelengths-require incredibly high-precision surfaces and patterns (often formed through extreme ultraviolet lithography at the ALS) and must undergo rigorous

  10. Revenue and earnings performance masked continuing investor-owned utility problems

    SciTech Connect (OSTI)

    Lincicome, R.A.

    1983-06-01

    The 1982 increase in revenues and net income for the top 100 electric utilities is misleading because the figure is distorted by the allowance for funds used during construction (AFUDC), which overstates the real dollar strength of most investor-owned utilities. A random sampling of profit and loss statements shows that companies heavily involved in plant construction can have AFUDC over 100% of net income. The average is 50% of utility earnings, while cash dividends run 75% of earnings. The problem is short-term, however, and will diminish as construction is completed. A summary of utility performance presents earnings growth statistics, sales data and comparisons, financial statistics, and income statistics and comparisons. A summary financial table lists the 100 utilities in alphabetical order. 7 tables. (DCK)

  11. DOE/SC-ARM/TR-098 Micropulse Lidar Cloud Mask Value-Added Product...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Journal of Atmospheric and Oceanic Technology 19: 431-442. Clothiaux, EE, GG Mace, TP Ackerman, TJ Kane, JD Spinhirne, and VS Scott. 1998. "An Automated Algorithm for Detection of ...

  12. Two photon spectroscopy of UF6 in the near ultraviolet

    SciTech Connect (OSTI)

    Bernstein, E.R.; Kennedy, P.M.

    1981-03-01

    The two photon excited fluorescence excitation spectrum of UF6 was observed in the region 410 to 315 nm. The spectrum was virtually indistinguishable from the one photon absorption in this region. No vibronic structure was observed in absorption or dispersed emission. These data indicate a high density of u and g states for UF6 in this energy range and facile photochemical decomposition. Emission intensity was found to be proportional to laser power to the 3.0 to 3.6 power.

  13. Photon extraction from nitride ultraviolet light-emitting devices

    DOE Patents [OSTI]

    Schowalter, Leo J; Chen, Jianfeng; Grandusky, James R

    2015-02-24

    In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

  14. A reflective optical transport system for ultraviolet Thomson...

    Office of Scientific and Technical Information (OSTI)

    Laboratory for Laser Energetics, University of Rochester, Rochester, New York 14623-1299 ... (c) 2012 American Institute of Physics; Country of input: International Atomic ...

  15. PROMINENCE PLASMA DIAGNOSTICS THROUGH EXTREME-ULTRAVIOLET ABSORPTION

    SciTech Connect (OSTI)

    Landi, E.; Reale, F.

    2013-07-20

    In this paper, we introduce a new diagnostic technique that uses EUV and UV absorption to determine the electron temperature and column emission measure, as well as the He/H relative abundance of the absorbing plasma. If a realistic assumption on the geometry of the latter can be made and a spectral code such as CHIANTI is used, then this technique can also yield the absorbing plasma hydrogen and electron density. This technique capitalizes on the absorption properties of hydrogen and helium at different wavelength ranges and temperature regimes. Several cases where this technique can be successfully applied are described. This technique works best when the absorbing plasma is hotter than 15,000 K. We demonstrate this technique on AIA observations of plasma absorption during a coronal mass ejection eruption. This technique can be easily applied to existing observations of prominences and cold plasmas in the Sun from almost all space missions devoted to the study of the solar atmosphere, which we list.

  16. Erosion resistant nozzles for laser plasma extreme ultraviolet (EUV) sources

    DOE Patents [OSTI]

    Kubiak, Glenn D. (Livermore, CA); Bernardez, II, Luis J. (Tracy, CA)

    2000-01-04

    A gas nozzle having an increased resistance to erosion from energetic plasma particles generated by laser plasma sources. By reducing the area of the plasma-facing portion of the nozzle below a critical dimension and fabricating the nozzle from a material that has a high EUV transmission as well as a low sputtering coefficient such as Be, C, or Si, it has been shown that a significant reduction in reflectance loss of nearby optical components can be achieved even after exposing the nozzle to at least 10.sup.7 Xe plasma pulses.

  17. THE RECENT STAR FORMATION IN NGC 6822: AN ULTRAVIOLET STUDY ...

    Office of Scientific and Technical Information (OSTI)

    CA 91125 (United States) Laboratoire d'Astrophysique de Marseille, BP 8, Traverse du Siphon, 13376 Marseille Cedex 12 (France) Observatories of the Carnegie Institution of...

  18. STUDYING LARGE- AND SMALL-SCALE ENVIRONMENTS OF ULTRAVIOLET LUMINOUS...

    Office of Scientific and Technical Information (OSTI)

    MD 21218 (United States) Laboratoire d'Astrophysique de Marseille, BP8, Traverse du Siphon, F-13376 Marseille (France) Center for Space Astrophysics, Yonsei University, Seoul...

  19. ULTRAVIOLET RAMAN SPECTRAL SIGNATURE ACQUISITION: UV RAMAN SPECTRAL FINGERPRINTS.

    SciTech Connect (OSTI)

    SEDLACEK,III, A.J.FINFROCK,C.

    2002-09-01

    As a member of the science-support part of the ITT-lead LISA development program, BNL is tasked with the acquisition of UV Raman spectral fingerprints and associated scattering cross-sections for those chemicals-of-interest to the program's sponsor. In support of this role, the present report contains the first installment of UV Raman spectral fingerprint data on the initial subset of chemicals. Because of the unique nature associated with the acquisition of spectral fingerprints for use in spectral pattern matching algorithms (i.e., CLS, PLS, ANN) great care has been undertaken to maximize the signal-to-noise and to minimize unnecessary spectral subtractions, in an effort to provide the highest quality spectral fingerprints. This report is divided into 4 sections. The first is an Experimental section that outlines how the Raman spectra are performed. This is then followed by a section on Sample Handling. Following this, the spectral fingerprints are presented in the Results section where the data reduction process is outlined. Finally, a Photographs section is included.

  20. Coordinated optical and ultraviolet observations of DH Leo

    SciTech Connect (OSTI)

    Newmark, J.S.; Buzasi, D.L.; Huenemoerder, D.P.; Ramsey, L.W.; Barden, S.C. Kitt Peak National Observatory, Tucson, AZ )

    1990-08-01

    Results are reported from contemporaneous KPNO optical spectroscopy, IUE UV spectroscopy, and KPNO R photometry of the DH Leo triple system in spring 1987. The data are presented in tables, graphs, and spectral phase images and discussed in detail. The H-alpha, H-beta, H-gamma, H-delta, and Ca II H and IRT lines are found to have excess emission, and the phase modulation in H-alpha, H-beta, and Ca II is well correlated with the photometric modulation. This result is attributed to the combination of (1) a small amount of global chromospheric emission and (2) emission from plagelike regions associated with cool starspots. The (H-alpha)/(H-beta) ratio is found to be significantly lower than that in longer-period RS CVn systems. 22 refs.

  1. Ultraviolet Thomson scattering measurements of the electron feature...

    Office of Scientific and Technical Information (OSTI)

    scattering measurements of the electron feature with an energetic 263 nm probe Authors: Ross, J S ; Divol, L ; Sorce, C ; Froula, D H ; Glenzer, S H Publication Date: 2011-06-23...

  2. STUDYING LARGE- AND SMALL-SCALE ENVIRONMENTS OF ULTRAVIOLET LUMINOUS

    Office of Scientific and Technical Information (OSTI)

    CA 91101 (United States); Neff, Susan G. Laboratory for Astronomy and Solar Physics, NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States), E-mail:...

  3. AN ULTRAVIOLET INVESTIGATION OF ACTIVITY ON EXOPLANET HOST STARS

    SciTech Connect (OSTI)

    Shkolnik, Evgenya L.

    2013-03-20

    Using the far-UV (FUV) and near-UV (NUV) photometry from the NASA Galaxy Evolution Explorer (GALEX), we searched for evidence of increased stellar activity due to tidal and/or magnetic star-planet interactions (SPI) in the 272 known FGK planetary hosts observed by GALEX. With the increased sensitivity of GALEX, we are able probe systems with lower activity levels and at larger distances than what has been done to date with X-ray satellites. We compared samples of stars with close-in planets (a < 0.1 AU) to those with far-out planets (a > 0.5 AU) and looked for correlations of excess activity with other system parameters. This statistical investigation found no clear correlations with a, M{sub p} , or M{sub p} /a, in contrast to some X-ray and Ca II studies. However, there is tentative evidence (at a level of 1.8{sigma}) that stars with radial-velocity-(RV)-detected close-in planets are more FUV-active than stars with far-out planets, in agreement with several published X-ray and Ca II results. The case is strengthened to a level of significance to 2.3{sigma} when transit-detected close-in planets are included. This is most likely because the RV-selected sample of stars is significantly less active than the field population of comparable stars, while the transit-selected sample is similarly active. Given the factor of 2-3 scatter in fractional FUV luminosity for a given stellar effective temperature, it is necessary to conduct a time-resolved study of the planet hosts in order to better characterize their UV variability and generate a firmer statistical result.

  4. Direct Photolysis of Chlorophenols In Aqueous Solution By Ultraviolet Excilamps

    SciTech Connect (OSTI)

    Matafonova, Galina; Philippova, Natalya; Batoev, Valeriy

    2011-08-25

    The direct photolysis of 2-chlorophenol (2-CP), 4-chlorophenol (4-CP) and 2,4-dichlorophenol (2,4-DCP) in model aqueous solution was studied using UV XeBr (282 nm) and KrCl (222 nm) excilamps. The highest pseudo-first order rate constants and quantum yields were found for molecular form of 4-CP (at pH 2 and 5.7) and anionic forms of 2-CP and 2,4-DCP (at pH 11) when irradiated by XeBr excilamp. The maximum removal efficiency of molecular form of 2-CP and 2,4-DCP with the lowest UV dose of absorbed energy was observed using KrCl excilamp. On the contrary, the XeBr excilamp required the lowest dose ({approx}2 J{center_dot}cm{sup -2}) for complete degradation of molecular 4-CP and anionic 2-CP. The highest removal efficiency of anionic form of 4-CP (65%) was achieved when using KrCl excilamp.

  5. Optical and ultraviolet observations of the narrow-lined type...

    Office of Scientific and Technical Information (OSTI)

    m sub 15(B) 0.85 0.05 mag). Based on the UV and optical light curves, we derived that a sup 56Ni mass of about 0.88 M sub was synthesized in the explosion....

  6. First ultraviolet reflectance measurements of several Kuiper Belt objects, Kuiper Belt object satellites, and new ultraviolet measurements of A Centaur

    SciTech Connect (OSTI)

    Stern, S. A.; Schindhelm, E.; Cunningham, N. J.

    2014-05-01

    We observed the 2600-3200 (hereafter, mid-UV) reflectance of two Kuiper Belt Objects (KBOs), two KBO satellites, and a Centaur, using the Hubble Space Telescope (HST) Cosmic Origins Spectrograph (COS). Other than measurements of the Pluto system, these constitute the first UV measurements obtained of KBOs, and KBO satellites, and new HST UV measurements of the Centaur 2060 Chiron. We find significant differences among these objects, constrain the sizes and densities of Haumea's satellites, and report the detection of a possible spectral absorption band in Haumea's spectrum near 3050 . Comparisons of these objects to previously published UV reflectance measurements of Pluto and Charon are also made here.

  7. A new architecture as transparent electrodes for solar and IR applications based on photonic structures via soft lithography

    SciTech Connect (OSTI)

    Kuang, Ping

    2011-05-15

    Transparent conducting electrodes with the combination of high optical transmission and good electrical conductivity are essential for solar energy harvesting and electric lighting devices. Currently, indium tin oxide (ITO) is used because ITO offers relatively high transparency (>80%) to visible light and low sheet resistance (R{sub s} = 10 ohms/square ({Omega}#2;/?)) for electrical conduction. However, ITO is costly due to limited indium reserves, and it is brittle. These disadvantages have motivated the search for other conducting electrodes with similar or better properties. There has been research on a variety of electrode structures involving carbon nanotube networks, graphene films, nanowire and nanopatterned meshes and grids. Due to their novel characteristics in light manipulation and collection, photonic crystal structures show promise for further improvement. Here, we report on a new architecture consisting of nanoscale high aspect ratio metallic photonic structures as transparent electrodes fabricated via a combination of processes. For (Au) and silver (Ag) structures, the visible light transmission can reach as high as 80%, and the sheet resistance of the structure can be as low as 3.2{Omega}#2;/?. The optical transparency of the high aspect ratio metal structures at visible wavelength range is comparable to that of ITO glass, while their sheet resistance is more than 3 times lower, which indicates a much higher electrical conductivity of the metal structures. Furthermore, the high aspect ratio metal structures have very high infrared (IR) reflection (90%) for the transverse magnetic (TM) mode, which can lead to the development of fabrication of metallic structures as IR filters for heat control applications. Investigations of interdigitated structures based on the high aspect ratio metal electrodes are ongoing to study the feasibility in smart window applications in light transmission modulation.

  8. Sub-5 nm Domains in Ordered Poly(cyclohexylethylene)-block-poly(methyl methacrylate) Block Polymers for Lithography.

    SciTech Connect (OSTI)

    Kennemur, Justin; Yao, Li; Bates, Frank Stephen; Hillmyer, Marc

    2014-01-01

    A series of poly(cyclohexylethylene)-block-poly- (methyl methacrylate) (PCHE PMMA) diblock copolymers with varying molar mass (4.9 kg/mol Mn 30.6 kg/mol) and narrow molar mass distribution were synthesized through a combination of anionic and atom transfer radical polymerization (ATRP) techniques. Heterogeneous catalytic hydrogenation of -(hydroxy)polystyrene (PS-OH) yielded -(hydroxy)poly(cyclohexylethylene) (PCHEOH) with little loss of hydroxyl functionality. PCHE-OH was reacted with -bromoisobutyryl bromide (BiBB) to produce an ATRP macroinitiator used for the polymerization of methyl methacrylate. PCHE PMMA is a glassy, thermally stable material with a large effective segment segment interaction parameter, eff = (144.4 6.2)/T (0.162 0.013), determined by meanfield analysis of order-to-disorder transition temperatures (TODT) measured by dynamic mechanical analysis and differential scanning calorimetry. Ordered lamellar domain pitches (9 D 33 nm) were identified by small-angle X-ray scattering from neat BCPs containing 43 52 vol % PCHE ( f PCHE). Atomic force microscopy was used to show 7.5 nm lamellar features (D = 14.8 nm) which are some of the smallest observed to date. The lowest molar mass sample (Mn = 4.9 kg/mol, f PCHE = 0.46) is characterized by TODT = 173 3 C and sub-5 nm nanodomains, which together with the sacrificial properties of PMMA and the high overall thermal stability place this material at the forefront of high- systems for advanced nanopatterning applications.

  9. Multifunctional oxides for integrated manufacturing of efficient graphene electrodes for organic electronics

    SciTech Connect (OSTI)

    Kidambi, Piran R.; Robertson, John; Hofmann, Stephan; Weijtens, Christ; Meyer, Jens

    2015-02-09

    Using multi-functional oxide films, we report on the development of an integration strategy for scalable manufacturing of graphene-based transparent conducting electrodes (TCEs) for organic electronics. A number of fundamental and process challenges exists for efficient graphene-based TCEs, in particular, environmentally and thermally stable doping, interfacial band engineering for efficient charge injection/extraction, effective wetting, and process compatibility including masking and patterning. Here, we show that all of these challenges can be effectively addressed at once by coating graphene with a thin (>10?nm) metal oxide (MoO{sub 3} or WO{sub 3}) layer. We demonstrate graphene electrode patterning without the need for conventional lithography and thereby achieve organic light emitting diodes with efficiencies exceeding those of standard indium tin oxide reference devices.

  10. Method of patterning an aerogel

    DOE Patents [OSTI]

    Reed, Scott T. (Edgewood, NM)

    2012-07-24

    A method for producing a pattern in an aerogel disposed as a coating on a substrate comprises exposing the aerogel coating to the vapors of a hydrophobic silane compound, masking the aerogel coating with a shadow photomask and irradiating the aerogel coating with ultraviolet (UV) irradiation. The exposure to UV through the shadow mask creates a pattern of hydrophobic and hydrophilic regions in the aerogel coating. Etching away the hydrophilic regions of the aerogel coating, preferably with a 1 molar solution of sodium hydroxide, leaves the unwetted and unetched hydrophobic regions of the aerogel layer on the substrate, replicating the pattern of the photomask. The hydrophobic aerogel pattern can be further exposed to UV irradiation if desired, to create a hydrophilic aerogel pattern.

  11. Polymeric matrix materials for infrared metamaterials

    DOE Patents [OSTI]

    Dirk, Shawn M; Rasberry, Roger D; Rahimian, Kamyar

    2014-04-22

    A polymeric matrix material exhibits low loss at optical frequencies and facilitates the fabrication of all-dielectric metamaterials. The low-loss polymeric matrix material can be synthesized by providing an unsaturated polymer, comprising double or triple bonds; partially hydrogenating the unsaturated polymer; depositing a film of the partially hydrogenated polymer and a crosslinker on a substrate; and photopatterning the film by exposing the film to ultraviolet light through a patterning mask, thereby cross-linking at least some of the remaining unsaturated groups of the partially hydrogenated polymer in the exposed portions.

  12. EUV optical design for 100 nm CD imaging system

    SciTech Connect (OSTI)

    Sweeney, D.W.; Hudyma, R.; Chapman, H.B.; Shafer, D.

    1998-04-09

    The imaging specifications for extreme ultraviolet lithography (EUVL) projection optics parallel those of other optical lithographies. Specifications are scaled to reflect the 100 nm critical dimension for the first generation EUVL systems. The design being fabricated for the Engineering Test Stand, an EUVL alpha tool, consists of a condenser with six channels to provide an effective partial coherence factor of 0.7. The camera contains four mirrors; three of the mirrors are aspheres and the fourth is spherical. The design of the optical package has been constrained so that the angles of incidence and the variations in the angle of incidence of all rays allow for uniform multilayer coatings. The multilayers introduce a slight shift in image position and magnification. We have shown that a system aligned with visible light is also aligned at 13.4 nm. Each mirror must be fabricated with an RMS figure error of less than 0.25 nm and better than 0.2 nm RMS roughness. Optical surfaces that exceed each of these specifications individually have been fabricated. The success of EUVL requires that these specifications be met simultaneously.

  13. Highly damped kinematic coupling for precision instruments

    DOE Patents [OSTI]

    Hale, Layton C.; Jensen, Steven A.

    2001-01-01

    A highly damped kinematic coupling for precision instruments. The kinematic coupling provides support while causing essentially no influence to its nature shape, with such influences coming, for example, from manufacturing tolerances, temperature changes, or ground motion. The coupling uses three ball-cone constraints, each combined with a released flexural degree of freedom. This arrangement enables a gain of higher load capacity and stiffness, but can also significantly reduce the friction level in proportion to the ball radius divided by the distance between the ball and the hinge axis. The blade flexures reduces somewhat the stiffness of the coupling and provides an ideal location to apply constrained-layer damping which is accomplished by attaching a viscoelastic layer and a constraining layer on opposite sides of each of the blade flexures. The three identical ball-cone flexures provide a damped coupling mechanism to kinematically support the projection optics system of the extreme ultraviolet lithography (EUVL) system, or other load-sensitive apparatus.

  14. Process for fabricating high reflectance-low stress Mo--Si multilayer reflective coatings

    DOE Patents [OSTI]

    Montcalm, Claude; Mirkarimi, Paul B.

    2001-01-01

    A high reflectance-low stress Mo--Si multilayer reflective coating particularly useful for the extreme ultraviolet (EUV) wavelength region. While the multilayer reflective coating has particular application for EUV lithography, it has numerous other applications where high reflectance and low stress multilayer coatings are utilized. Multilayer coatings having high near-normal incidence reflectance (R.gtoreq.65%) and low residual stress (.ltoreq.100 MPa) have been produced using thermal and non-thermal approaches. The thermal approach involves heating the multilayer coating to a given temperature for a given time after deposition in order to induce structural changes in the multilayer coating that will have an overall "relaxation" effect without reducing the reflectance significantly.

  15. High reflectance-low stress Mo-Si multilayer reflective coatings

    DOE Patents [OSTI]

    Montcalm, Claude; Mirkarimi, Paul B.

    2000-01-01

    A high reflectance-low stress Mo-Si multilayer reflective coating particularly useful for the extreme ultraviolet (EUV) wavelength region. While the multilayer reflective coating has particular application for EUV lithography, it has numerous other applications where high reflectance and low stress multilayer coatings are utilized. Multilayer coatings having high near-normal incidence reflectance (R.gtoreq.65%) and low residual stress (.ltoreq.100 MPa) have been produced using thermal and non-thermal approaches. The thermal approach involves heating the multilayer coating to a given temperature for a given time after deposition in order to induce structural changes in the multilayer coating that will have an overall "relaxation" effect without reducing the reflectance significantly.

  16. Method for fabricating beryllium-based multilayer structures

    DOE Patents [OSTI]

    Skulina, Kenneth M. (Livermore, CA); Bionta, Richard M. (Livermore, CA); Makowiecki, Daniel M. (Livermore, CA); Alford, Craig S. (Tracy, CA)

    2003-02-18

    Beryllium-based multilayer structures and a process for fabricating beryllium-based multilayer mirrors, useful in the wavelength region greater than the beryllium K-edge (111 .ANG. or 11.1 nm). The process includes alternating sputter deposition of beryllium and a metal, typically from the fifth row of the periodic table, such as niobium (Nb), molybdenum (Mo), ruthenium (Ru), and rhodium (Rh). The process includes not only the method of sputtering the materials, but the industrial hygiene controls for safe handling of beryllium. The mirrors made in accordance with the process may be utilized in soft x-ray and extreme-ultraviolet projection lithography, which requires mirrors of high reflectivity (>60%) for x-rays in the range of 60-140 .ANG. (60-14.0 nm).

  17. Temperature dependent dielectric function in the near-infrared to vacuum-ultraviolet ultraviolet spectral range of alumina and yttria stabilized zirconia thin films

    SciTech Connect (OSTI)

    Schmidt-Grund, R. Lhmann, T.; Bntgen, T.; Franke, H.; Lorenz, M.; Grundmann, M.; Opper, D.

    2013-12-14

    The dielectric function of nano-/polycrystalline alumina and yttria stabilised zirconia thin films has been investigated in a wide spectral range from 1.0?eV to 7.5?eV and temperatures between 10?K and room temperature. In the near band-edge spectral range, we found a broad distribution of optical transitions within the band gap, the so-called Urbach absorption tail which is typical for amorphous or polycrystalline materials due to the lack of long range order in the crystal structure. The coupling properties of the electronic system to the optical phonon bath and thermal lattice vibrations strongly depend on the ratio of the spectral extent of these disorder states to the main phonon energy, which we correlate with the different crystalline structure of our samples. The films have been grown at room temperature and 650?C by pulsed laser deposition.

  18. Electrostatically focused addressable field emission array chips (AFEA's) for high-speed massively parallel maskless digital E-beam direct write lithography and scanning electron microscopy

    DOE Patents [OSTI]

    Thomas, Clarence E.; Baylor, Larry R.; Voelkl, Edgar; Simpson, Michael L.; Paulus, Michael J.; Lowndes, Douglas H.; Whealton, John H.; Whitson, John C.; Wilgen, John B.

    2002-12-24

    Systems and methods are described for addressable field emission array (AFEA) chips. A method of operating an addressable field-emission array, includes: generating a plurality of electron beams from a pluralitly of emitters that compose the addressable field-emission array; and focusing at least one of the plurality of electron beams with an on-chip electrostatic focusing stack. The systems and methods provide advantages including the avoidance of space-charge blow-up.

  19. Nanometer-scale ablation using focused, coherent extreme ultraviolet/soft x-ray light

    DOE Patents [OSTI]

    Menoni, Carmen S. (Fort Collins, CO); Rocca, Jorge J. (Fort Collins, CO); Vaschenko, Georgiy (San Diego, CA); Bloom, Scott (Encinitas, CA); Anderson, Erik H. (El Cerrito, CA); Chao, Weilun (El Cerrito, CA); Hemberg, Oscar (Stockholm, SE)

    2011-04-26

    Ablation of holes having diameters as small as 82 nm and having clean walls was obtained in a poly(methyl methacrylate) on a silicon substrate by focusing pulses from a Ne-like Ar, 46.9 nm wavelength, capillary-discharge laser using a freestanding Fresnel zone plate diffracting into third order is described. Spectroscopic analysis of light from the ablation has also been performed. These results demonstrate the use of focused coherent EUV/SXR light for the direct nanoscale patterning of materials.

  20. Ultraviolet photosensitivity of sulfur-doped micro- and nano-crystalline diamond

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mendoza, Frank; Makarov, Vladimir; Hidalgo, Arturo; Weiner, Brad; Morell, Gerardo

    2011-06-06

    The room-temperature photosensitivity of sulfur-doped micro- (MCD), submicro- (SMCD) and nano- (NCD) crystalline diamond films synthesized by hot-filament chemical vapor deposition was studied. The structure and composition of these diamond materials were characterized by Raman spectroscopy, scanning electron microscopy and X-ray diffraction. The UV sensitivity and response time were studied for the three types of diamond materials using a steady state broad UV excitation source and two pulsed UV laser radiations. It was found that they have high sensitivity in the UV region, as high as 109 sec-1mV-1 range, linear response in a broad spectral range below 320 nm, photocurrentsmore » around ~10-5 A, and short response time better than 100 ns, which is independent of fluency intensity. A phenomenological model was applied to help understand the role of defects and dopant concentration on the materials’ photosensitivity.« less

  1. ULTRAVIOLET INDUCED MOTION OF A FLUORESCENT DUST CLOUD IN AN ARGON DIRECT CURRENT GLOW DISCHARGE PLASMA

    SciTech Connect (OSTI)

    Hvasta, M.G.; and Zwicker, A.

    2008-01-01

    Dusty plasmas consist of electrons, ions, neutrals and nm-?m sized particles commonly referred to as dust. In man-made plasmas this dust may represent impurities in a tokamak or plasma etching processing. In astrophysical plasmas this dust forms structures such as planetary rings and comet tails. To study dusty plasma dynamics an experiment was designed in which a 3:1 silica (<5 ?m diameter) and fl uorescent dust mixture was added to an argon DC glow discharge plasma and exposed to UV radiation. This fl uorescent lighting technique offers an advantage over laser scattering (which only allows two-dimensional slices of the cloud to be observed) and is simpler than scanning mirror techniques or particle image velocimetry. Under typical parameters (P=150 mTorr, V anode= 100 V, Vcathode= -400 V, Itotal < 2mA) when the cloud is exposed to the UV light (100W, ? = 365 nm) the mixture fl uoresces, moves ~2mm towards the light source and begins rotating in a clockwise manner (as seen from the cathode). By calibrating a UV lamp and adjusting the relative intensity of the UV with a variable transformer it was found that both translational and rotational velocities are a function of UV intensity. Additionally, it was determined that bulk cloud rotation is not seen when the dust tray is not grounded while bulk translation is. This ongoing experiment represents a novel way to control contamination in man-made plasmas and a path to a better understanding of UV-bathed plasma systems in space..

  2. New red phosphor for near-ultraviolet light-emitting diodes with high color-purity

    SciTech Connect (OSTI)

    Wang, Zhengliang; He, Pei; Wang, Rui; Zhao, Jishou; Gong, Menglian

    2010-02-15

    New red phosphors, Na{sub 5}Eu(MoO{sub 4}){sub 4} doped with boron oxide were prepared by the solid-state reaction. Their structure and photo-luminescent properties were investigated. With the introduction of boron oxide, the red emission intensity of the phosphors under 395 nm excitation is strengthened, with high color-purity (x = 0.673, y = 0.327). The single red light-emitting diode was obtained by combining InGaN chip with the red phosphor, bright red light can be observed by naked eyes from the red light-emitting diodes under a forward bias of 20 mA.

  3. Bright high-repetition-rate source of narrowband extreme-ultraviolet...

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Search Results Journal Article: Bright high-repetition-rate source of ... nanomaterials, or correlated solids and are of interest for advanced applications. ...

  4. Sparkling extreme-ultraviolet bright dots observed with Hi-C

    SciTech Connect (OSTI)

    Rgnier, S.; Alexander, C. E.; Walsh, R. W.; Winebarger, A. R.; Cirtain, J.; Golub, L.; Korreck, K. E.; Weber, M.; Mitchell, N.; Platt, S.; De Pontieu, B.; Title, A.; Kobayashi, K.; Kuzin, S.; DeForest, C. E.

    2014-04-01

    Observing the Sun at high time and spatial scales is a step toward understanding the finest and fundamental scales of heating events in the solar corona. The high-resolution coronal (Hi-C) instrument has provided the highest spatial and temporal resolution images of the solar corona in the EUV wavelength range to date. Hi-C observed an active region on 2012 July 11 that exhibits several interesting features in the EUV line at 193 . One of them is the existence of short, small brightenings 'sparkling' at the edge of the active region; we call these EUV bright dots (EBDs). Individual EBDs have a characteristic duration of 25 s with a characteristic length of 680 km. These brightenings are not fully resolved by the SDO/AIA instrument at the same wavelength; however, they can be identified with respect to the Hi-C location of the EBDs. In addition, EBDs are seen in other chromospheric/coronal channels of SDO/AIA, which suggests a temperature between 0.5 and 1.5 MK. Based on their frequency in the Hi-C time series, we define four different categories of EBDs: single peak, double peak, long duration, and bursty. Based on a potential field extrapolation from an SDO/HMI magnetogram, the EBDs appear at the footpoints of large-scale, trans-equatorial coronal loops. The Hi-C observations provide the first evidence of small-scale EUV heating events at the base of these coronal loops, which have a free magnetic energy of the order of 10{sup 26} erg.

  5. Ultraviolet photosensitivity of sulfur-doped micro- and nano-crystalline diamond

    SciTech Connect (OSTI)

    Mendoza, Frank; Makarov, Vladimir; Hidalgo, Arturo; Weiner, Brad; Morell, Gerardo

    2011-06-06

    The room-temperature photosensitivity of sulfur-doped micro- (MCD), submicro- (SMCD) and nano- (NCD) crystalline diamond films synthesized by hot-filament chemical vapor deposition was studied. The structure and composition of these diamond materials were characterized by Raman spectroscopy, scanning electron microscopy and X-ray diffraction. The UV sensitivity and response time were studied for the three types of diamond materials using a steady state broad UV excitation source and two pulsed UV laser radiations. It was found that they have high sensitivity in the UV region, as high as 109 sec-1mV-1 range, linear response in a broad spectral range below 320 nm, photocurrents around ~10-5 A, and short response time better than 100 ns, which is independent of fluency intensity. A phenomenological model was applied to help understand the role of defects and dopant concentration on the materials photosensitivity.

  6. Inhibition of human peripheral blood lymphocyte function by protoporphyrin and longwave ultraviolet light

    SciTech Connect (OSTI)

    Barrett, K.E.; Yen, A.; Montisano, D.; Gigli, I.; Bigby, T.D.

    1994-10-01

    Modulation of immunologic effector cells by exogenous photoactive substances has been advanced as an underlying mechanism for the efficacy of various photochemotherapeutic regimens. It is also possible that endogenous photosensitizers, such as protoporphyrin, could similarly modify the function of immune cell types. The authors examined the effects of protoporphyrin plus longwave UV light on the ability of human PBL to proliferate in response to mitogens. Noncytotoxic dosages of protoporphyrin plus UV light suppressed PHA-stimulated proliferation of both PBMC and enriched T cells. CD8{sup +} cells were more sensitive to this inhibitory effect than CD4{sup +} cells. The inhibitory effect was also observed when proliferation was induced by the combination of a phorbol ester and ionomycin. Inhibition of PBMC proliferation was associated with inhibition of IL-2 secretion but proliferation was not restored with exogenous IL-2. Instead, the effect of protoporphyrin plus UV light may be on IL-2R. Cells treated with protoporphyrin and UV light did not display the increase in CD25 and {beta}-chain of the IL-2R induced by PHA in control cells. In contrast to the effects of protoporphyrin and UV light on IL-2 and IL-2R {alpha}-chain protein expression, the accumulation of mRNA for these proteins induced by PHA was unaffected. None of the effects of protoporphyrin plus UV light on lymphocytes were observed in control experiments where cells were treated with either protoporphyrin or UV light alone. They conclude that biologically relevant dosages of protoporphyrin and UV light modify the function of circulating lymphocytes. 26 refs., 8 figs., 1 tab.

  7. Desorption of hydroxyl radicals in the vacuum ultraviolet photolysis of amorphous solid water at 90 K

    SciTech Connect (OSTI)

    Hama, Tetsuya; Yabushita, Akihiro; Yokoyama, Masaaki; Kawasaki, Masahiro; Andersson, Stefan

    2009-08-07

    We have studied the desorption dynamics of OH radicals from the 157 nm photodissociation of amorphous solid water (ASW) as well as H{sub 2}O{sub 2} deposited on an ASW surface at 90 K. The translational and internal energy distributions of OH were measured using resonance-enhanced multiphoton ionization methods. These distributions are compared to reported molecular dynamics calculations for the condensed phase photodissociation of water ice and also reported results for the gas phase photodissociation of H{sub 2}O at 157 nm. We have confirmed that OH radicals are produced from two different mechanisms: one from primary photolysis of surface H{sub 2}O of ASW, and the other being secondary photolysis of H{sub 2}O{sub 2} photoproducts on the ASW surface after prolonged irradiation at 157 nm.

  8. The ultraviolet photodissociation of axial and equatorial conformers of 3-pyrroline

    SciTech Connect (OSTI)

    Oliver, Thomas A. A.; King, Graeme A.; Ashfold, Michael N. R.

    2010-11-21

    Resolved sets of photoproducts arising from the photodissociation of axial and equatorial conformers of 3-pyrroline have been observed using H(Rydberg) atom photofragment translational spectroscopy following excitation in the wavelength range of 250-213 nm. 3-pyrroline (alternatively 2,5-dihydropyrrole) is a five membered partially saturated heterocycle in which the bonding around the N atom is pyramidal (sp{sup 3} hybridized) and the N-H bond can lie either axial or equatorial to the ring. Careful analysis of total kinetic energy release data derived from H atom time-of-flight measurements reveals excitation of the 3-pyrrolinyl cofragment consistent with N-H bond fission in both the axial and equatorial conformers. This allows determination of the energy difference between the ground state conformers to be 340{+-}50 cm{sup -1} and the N-H bond strength for axial and equatorial conformers as 31 610{+-}50 and 31 270{+-}50 cm{sup -1}, respectively.

  9. Communication: Ultraviolet photodissociation dynamics of the simplest Criegee intermediate CH{sub 2}OO

    SciTech Connect (OSTI)

    Lehman, Julia H.; Li, Hongwei; Beames, Joseph M.; Lester, Marsha I.

    2013-10-14

    The velocity and angular distributions of O {sup 1}D photofragments arising from UV excitation of the CH{sub 2}OO intermediate on the B {sup 1}A??X {sup 1}A? transition are characterized using velocity map ion imaging. The anisotropic angular distribution yields the orientation of the transition dipole moment, which reflects the ?*?? character of the electronic transition associated with the COO group. The total kinetic energy release distributions obtained at several photolysis wavelengths provide detail on the internal energy distribution of the formaldehyde cofragments and the dissociation energy of CH{sub 2}OO X {sup 1}A? to O {sup 1}D + H{sub 2}CO X {sup 1}A{sub 1}. A common termination of the total kinetic energy distributions, after accounting for the different excitation energies, gives an upper limit for the CH{sub 2}OO X {sup 1}A? dissociation energy of D{sub 0}? 54 kcal mol{sup ?1}, which is compared with theoretical predictions including high level multi-reference ab initio calculations.

  10. Molecular beam mass spectrometry with tunable vacuum ultraviolet (VUV) synchrotron radiation

    SciTech Connect (OSTI)

    Golan, Amir; Ahmed, Musahid

    2012-01-01

    Tunable soft ionization coupled to mass spectroscopy is a powerful method to investigate isolated molecules, complexes and clusters and their spectroscopy and dynamics.[1-4] Fundamental studies of photoionization processes of biomolecules provide information about electronic structure of these systems. Furthermore determinations of ionization energies and other properties of biomolecules in the gas phase are not trivial, and these experiments provide a platform to generate these data. We have developed a thermal vaporization technique coupled with supersonic molecular beams that provides a gentle way to transport these species into the gas phase. Judicious combination of source gas and temperature allows for formation of dimers and higher clusters of the DNA bases. The focus of this particular work is on the effects of non-covalent interactions, i.e., hydrogen bonding, stacking, and electrostatic interactions, on the ionization energies and proton transfer of individual biomolecules, their complexes and upon micro-hydration by water.[1, 5-9] We have performed experimental and theoretical characterization of the photoionization dynamics of gas-phase uracil and 1,3-methyluracil dimers using molecular beams coupled with synchrotron radiation at the Chemical Dynamics Beamline[10] located at the Advanced Light Source and the experimental details are visualized here. This allowed us to observe the proton transfer in 1,3-dimethyluracil dimers, a system with pi stacking geometry and with no hydrogen bonds[1]. Molecular beams provide a very convenient and efficient way to isolate the sample of interest from environmental perturbations which in return allows accurate comparison with electronic structure calculations[11, 12]. By tuning the photon energy from the synchrotron, a photoionization efficiency (PIE) curve can be plotted which informs us about the cationic electronic states. These values can then be compared to theoretical models and calculations and in turn, explain in detail the electronic structure and dynamics of the investigated species [1, 3].

  11. PROBING THE ROLE OF CARBON IN ULTRAVIOLET EXTINCTION ALONG GALACTIC SIGHT LINES

    SciTech Connect (OSTI)

    Parvathi, V. S.; Babu, B. R. S.; Sofia, U. J.; Murthy, J. E-mail: brsbabu@gmail.com E-mail: jmurthy@yahoo.com

    2012-11-20

    We report previously undetermined interstellar gas and dust-phase carbon abundances along 15 Galactic sight lines based on archival data of the strong 1334.5323 A transition observed with the Space Telescope Imaging Spectrograph. These are combined with previously reported carbon measurements along six sight lines to produce a complete sample of interstellar C II measurements determined with the 1334 A transition. Our data set includes a variety of Galactic disk environments characterized by different extinctions and samples paths ranging over three orders of magnitude in average density of hydrogen ((n(H))). Our data support the idea that dust, specifically carbon-based grains, are processed in the neutral interstellar medium. We, however, do not find that the abundance of carbon in dust or the grain-size distribution is related to the strength of the 2175 A bump. This is surprising, given that many current models have polycyclic aromatic hydrocarbons as the bump-producing dust.

  12. Laser desorption time-of-flight mass spectrometry of ultraviolet photo-processed ices

    SciTech Connect (OSTI)

    Paardekooper, D. M. Bossa, J.-B.; Isokoski, K.; Linnartz, H.

    2014-10-01

    A new ultra-high vacuum experiment is described that allows studying photo-induced chemical processes in interstellar ice analogues. MATRICES - a Mass Analytical Tool to study Reactions in Interstellar ICES applies a new concept by combining laser desorption and time-of-flight mass spectrometry with the ultimate goal to characterize in situ and in real time the solid state evolution of organic compounds upon UV photolysis for astronomically relevant ice mixtures and temperatures. The performance of the experimental setup is demonstrated by the kinetic analysis of the different photoproducts of pure methane (CH?) ice at 20 K. A quantitative approach provides formation yields of several new species with up to four carbon atoms. Convincing evidence is found for the formation of even larger species. Typical mass resolutions obtained range from M/?M ~320 to ~400 for CH? and argon, respectively. Additional tests show that the typical detection limit (in monolayers) is ?0.02 ML, substantially more sensitive than the regular techniques used to investigate chemical processes in interstellar ices.

  13. Limits on Variations in Fundamental Constants from 21-cm and Ultraviolet Quasar Absorption Lines

    SciTech Connect (OSTI)

    Tzanavaris, P.; Webb, J.K.; Flambaum, V.V.; Curran, S.J.; Murphy, M.T.

    2005-07-22

    Quasar absorption spectra at 21-cm and UV rest wavelengths are used to estimate the time variation of x{identical_to}{alpha}{sup 2}g{sub p}{mu}, where {alpha} is the fine structure constant, g{sub p} the proton g factor, and m{sub e}/m{sub p}{identical_to}{mu} the electron/proton mass ratio. Over a redshift range 0.24 < or approx. z{sub abs} < or approx. 2.04, <{delta}x/x>{sub total}{sup weighted}=(1.17{+-}1.01)x10{sup -5}. A linear fit gives x/x=(-1.43{+-}1.27)x10{sup -15} yr{sup -1}. Two previous results on varying {alpha} yield the strong limits {delta}{mu}/{mu}=(2.31{+-}1.03)x10{sup -5} and {delta}{mu}/{mu}=(1.29{+-}1.01)x10{sup -5}. Our sample, 8x larger than any previous, provides the first direct estimate of the intrinsic 21-cm and UV velocity differences {approx}6 km s{sup -1}.

  14. HUBBLE SPACE TELESCOPE FAR ULTRAVIOLET SPECTROSCOPY OF THE RECURRENT NOVA T PYXIDIS

    SciTech Connect (OSTI)

    Godon, Patrick; Sion, Edward M. [Astronomy and Astrophysics, Villanova University, Villanova, PA 19085 (United States); Starrfield, Sumner [School of Earth and Space Exploration, Arizona State University, Tempe, AZ 85287 (United States); Livio, Mario; Williams, Robert E. [Space Telescope Science Institute, Baltimore, MD 21218 (United States); Woodward, Charles E. [Minnesota Institute for Astrophysics, University of Minnesota, Minneapolis, MN 55455 (United States); Kuin, Paul [Mullard Space Science Laboratory, University College London, Holmbury St. Mary, Dorking, Surrey RH5 6NT (United Kingdom); Page, Kim L., E-mail: patrick.godon@villanova.edu, E-mail: edward.sion@villanova.edu, E-mail: sumner.starrfield@asu.edu, E-mail: mlivio@stsci.edu, E-mail: wms@stsci.edu, E-mail: chelsea@astro.umn.edu, E-mail: n.kuin@ucl.ac.uk, E-mail: klp5@leicester.ac.uk [Department of Physics and Astronomy, University of Leicester, Leicester, LE1 7RH (United Kingdom)

    2014-04-01

    With six recorded nova outbursts, the prototypical recurrent nova T Pyxidis (T Pyx) is the ideal cataclysmic variable system to assess the net change of the white dwarf mass within a nova cycle. Recent estimates of the mass ejected in the 2011 outburst ranged from a few ?10{sup 5} M {sub ?} to 3.3 10{sup 4} M {sub ?}, and assuming a mass accretion rate of 10{sup 8}-10{sup 7} M {sub ?}yr{sup 1} for 44yr, it has been concluded that the white dwarf in T Pyx is actually losing mass. Using NLTE disk modeling spectra to fit our recently obtained Hubble Space Telescope COS and STIS spectra, we find a mass accretion rate of up to two orders of magnitude larger than previously estimated. Our larger mass accretion rate is due mainly to the newly derived distance of T Pyx (4.8kpc, larger than the previous 3.5kpc estimate), our derived reddening of E(B V) = 0.35 (based on combined IUE and GALEX spectra), and NLTE disk modeling (compared to blackbody and raw flux estimates in earlier works). We find that for most values of the reddening (0.25 ? E(B V) ? 0.50) and white dwarf mass (0.70 M {sub ?} ? M {sub wd} ? 1.35 M {sub ?}) the accreted mass is larger than the ejected mass. Only for a low reddening (?0.25 and smaller) combined with a large white dwarf mass (0.9 M {sub ?} and larger) is the ejected mass larger than the accreted one. However, the best results are obtained for a larger value of reddening.

  15. OBSERVATIONS OF OUTFLOWING ULTRAVIOLET ABSORBERS IN NGC 4051 WITH THE COSMIC ORIGINS SPECTROGRAPH

    SciTech Connect (OSTI)

    Kraemer, S. B. [Institute for Astrophysics and Computational Sciences, Department of Physics, Catholic University of America, Washington, DC 20064 (United States); Crenshaw, D. M.; Fischer, T. C. [Department of Physics and Astronomy, Georgia State University, Astronomy Offices, One Park Place South SE, Suite 700, Atlanta, GA 30303 (United States); Dunn, J. P. [Department of Chemistry and Physics, Augusta State University, 2500 Walton Way, Augusta, GA 30904 (United States); Turner, T. J. [Department of Physics, University of Maryland Baltimore County, Baltimore, MD 21250 (United States); Lobban, A. P.; Reeves, J. N. [Astrophysics Group, School of Physical and Geographical Sciences, Keele University, Keele, Staffordshire ST5 5BG (United Kingdom); Miller, L. [Department of Physics, University of Oxford, Denys Wilkinson Building, Keble Road, Oxford OX1 3RH (United Kingdom); Braito, V., E-mail: steven.b.kraemer@nasa.gov [Department of Physics and Astronomy, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom)

    2012-06-01

    We present new Hubble Space Telescope (HST)/Cosmic Origins Spectrograph (COS) observations of the narrow-line Seyfert 1 galaxy NGC 4051. These data were obtained as part of a coordinated observing program including X-ray observations with the Chandra/High Energy Transmission Grating (HETG) spectrometer and Suzaku. We detected nine kinematic components of UV absorption, which were previously identified using the HST/Space Telescope Imaging Spectrograph (STIS). None of the absorption components showed evidence for changes in column density or profile within the {approx}10 yr between the STIS and COS observations, which we interpret as evidence of (1) saturation, for the stronger components, or (2) very low densities, i.e., n{sub H} < 1 cm{sup -3}, for the weaker components. After applying a +200 km s{sup -1} offset to the HETG spectrum, we found that the radial velocities of the UV absorbers lay within the O VII profile. Based on photoionization models, we suggest that, while UV components 2, 5, and 7 produce significant O VII absorption, the bulk of the X-ray absorption detected in the HETG analysis occurs in more highly ionized gas. Moreover, the mass-loss rate is dominated by high-ionization gas which lacks a significant UV footprint.

  16. On-board Measurement of NO and NO2 using Non-dispersive Ultraviolet (NDUV) Spectroscopy

    Broader source: Energy.gov [DOE]

    Analyzer allows simultaneous and separate measurement of NO and NO2 for on-road and non-raod applications

  17. THE RECENT STAR FORMATION IN NGC 6822: AN ULTRAVIOLET STUDY Efremova...

    Office of Scientific and Technical Information (OSTI)

    ages of the SF complexes up to a few hundred Myr, and masses from 2 x 10sup 2 Msub sun to 1.5 x 10sup 6 Msub sun. The derived ages and masses strongly depend on the...

  18. UBIQUITOUS ROTATING NETWORK MAGNETIC FIELDS AND EXTREME-ULTRAVIOLET CYCLONES IN THE QUIET SUN

    SciTech Connect (OSTI)

    Zhang Jun; Liu Yang E-mail: yliu@sun.stanford.edu

    2011-11-01

    We present Solar Dynamics Observatory (SDO) Atmospheric Imaging Assembly (AIA) observations of EUV cyclones in the quiet Sun. These cyclones are rooted in the rotating network magnetic fields (RNFs). Such cyclones can last several to more than 10 hr and, at the later phase, they are found to be associated with EUV brightenings (microflares) and even EUV waves. SDO Helioseismic and Magnetic Imager (HMI) observations show a ubiquitous presence of RNFs. Using HMI line-of-sight magnetograms on 2010 July 8, we find 388 RNFs in an area of 800 x 980 arcsec{sup 2} near the disk center where no active region is present. The sense of rotation shows a weak hemisphere preference. The unsigned magnetic flux of the RNFs is about 4.0 x 10{sup 21} Mx, or 78% of the total network flux. These observational phenomena at small scale reported in this Letter are consistent with those at large scale in active regions. The ubiquitous RNFs and EUV cyclones over the quiet Sun may suggest an effective way to heat the corona.

  19. NON-POTENTIAL FIELDS IN THE QUIET SUN NETWORK: EXTREME-ULTRAVIOLET AND MAGNETIC FOOTPOINT OBSERVATIONS

    SciTech Connect (OSTI)

    Chesny, D. L.; Oluseyi, H. M.; Orange, N. B.

    2013-11-20

    The quiet Sun (QS) magnetic network is known to contain dynamics which are indicative of non-potential fields. Non-potential magnetic fields forming ''S-shaped'' loop arcades can lead to the breakdown of static activity and have only been observed in high temperature X-ray coronal structuressome of which show eruptive behavior. Thus, analysis of this type of atmospheric structuring has been restricted to large-scale coronal fields. Here we provide the first identification of non-potential loop arcades exclusive to the QS supergranulation network. High-resolution Atmospheric Imaging Assembly data from the Solar Dynamics Observatory have allowed for the first observations of fine-scale ''S-shaped'' loop arcades spanning the network. We have investigated the magnetic footpoint flux evolution of these arcades from Heliospheric and Magnetic Imager data and find evidence of evolving footpoint flux imbalances accompanying the formation of these non-potential fields. The existence of such non-potentiality confirms that magnetic field dynamics leading to the build up of helicity exist at small scales. QS non-potentiality also suggests a self-similar formation process between the QS network and high temperature corona and the existence of self-organized criticality (SOC) in the form of loop-pair reconnection and helicity dissipation. We argue that this type of behavior could lead to eruptive forms of SOC as seen in active region (AR) and X-ray sigmoids if sufficient free magnetic energy is available. QS magnetic network dynamics may be considered as a coronal proxy at supergranular scales, and events confined to the network can even mimic those in coronal ARs.

  20. The effect of quantum correction on plasma electron heating in ultraviolet laser interaction

    SciTech Connect (OSTI)

    Zare, S.; Sadighi-Bonabi, R. Anvari, A.; Yazdani, E.; Hora, H.

    2015-04-14

    The interaction of the sub-picosecond UV laser in sub-relativistic intensities with deuterium is investigated. At high plasma temperatures, based on the quantum correction in the collision frequency, the electron heating and the ion block generation in plasma are studied. It is found that due to the quantum correction, the electron heating increases considerably and the electron temperature uniformly reaches up to the maximum value of 4.91??10{sup 7?}K. Considering the quantum correction, the electron temperature at the laser initial coupling stage is improved more than 66.55% of the amount achieved in the classical model. As a consequence, by the modified collision frequency, the ion block is accelerated quicker with higher maximum velocity in comparison with the one by the classical collision frequency. This study proves the necessity of considering a quantum mechanical correction in the collision frequency at high plasma temperatures.

  1. Cluster beam targets for laser plasma extreme ultraviolet and soft x-ray sources

    DOE Patents [OSTI]

    Kublak, Glenn D. (124 Turquoise Way, Livermore, Alameda County, CA 94550); Richardson, Martin C. (CREOL

    1996-01-01

    Method and apparatus for producing extreme ultra violet (EUV) and soft x-ray radiation from an ultra-low debris plasma source are disclosed. Targets are produced by the free jet expansion of various gases through a temperature controlled nozzle to form molecular clusters. These target clusters are subsequently irradiated with commercially available lasers of moderate intensity (10.sup.11 -10.sup.12 watts/cm.sup.2) to produce a plasma radiating in the region of 0.5 to 100 nanometers. By appropriate adjustment of the experimental conditions the laser focus can be moved 10-30 mm from the nozzle thereby eliminating debris produced by plasma erosion of the nozzle.

  2. Extreme ultraviolet spectra of highly ionized Ge, Kr and Mo emitted by imploding plasmas

    SciTech Connect (OSTI)

    Goldsmith, S.; Feldman, U.; Cohen, L.; Behring, W.E.

    1984-01-01

    Spectra of highly ionized Ge, Kr and Mo in the spectral region of 10 to 80A were excited in laser-produced plasmas. The plasma was obtained by focusing the energy of the 24 laser beams of the University of Rochester Omega system on 0.4 mm diameter microballoon targets. The laser pulse duration was in the range of 0.87 to 1.09 ns, with total energy in the range of 1.8 to 2.2 kJ. The observed spectral lines include n = 2-2 transitions in the oxygen and fluorine isoelectronic sequences and n = 3 to 4 transitions in the sodium, magnesium and aluminum isoelectronic sequences. The present observations are compared with previous experimental and theoretical studies.

  3. Durable silver mirror with ultra-violet thru far infra-red reflection

    DOE Patents [OSTI]

    Wolfe, Jesse D. (Discovery Bay, CA)

    2010-11-23

    A durable highly reflective silver mirror characterized by high reflectance in a broad spectral range of about 300 nm in the UV to the far infrared (.about.10000 nm), as well as exceptional environmental durability. A high absorptivity metal underlayer is used which prevents the formation of a galvanic cell with a silver layer while increasing the reflectance of the silver layer. Environmentally durable overcoat layers are provided to enhance mechanical and chemical durability and protect the silver layer from corrosion and tarnishing, for use in a wide variety of surroundings or climates, including harsh or extreme environments.

  4. Soft X-Ray and Vacuum Ultraviolet Based Spectroscopy of the Actinides...

    Office of Scientific and Technical Information (OSTI)

    spectroscopy, Synchrotron-radiation-based photoelectron spectroscopy, Soft x-ray absorption spectroscopy, Soft x-ray emission spectroscopy, Inverse photoelectron spectroscopy,...

  5. Coordinated optical and ultraviolet observations of short period RS CVn and W UMa type stars

    SciTech Connect (OSTI)

    Newmark, J.S.

    1990-01-01

    Data from the Fiber Optic Echelle Charge Coupled Device (CCD) Spectrograph at KPNO as well as IUE data were analyzed in this study of short period RS CVn and W UMa type binaries. Optical data were analyzed using a spectral subtraction technique to find excess emission (or absorption) in the component spectra. Analysis of data for the W UMa type contact binary VW Cep strongly suggests the existence of extended material near the contact region but clearly outside the Roche lobes. This material is presumably confined in magnetic loops bridging the two components. Making simple assumptions, the density can be estimated at 4 to 5 times 10 {sup 12} cm (sup {minus}3). A possible prominence was also detected on the secondary component of the detached short period RS CVn system DH Leo.

  6. Thermal annealing effects on ultra-violet luminescence properties of Gd doped AlN

    SciTech Connect (OSTI)

    Kita, Takashi; Ishizu, Yuta; Tsuji, Kazuma; Harada, Yukihiro; Chigi, Yoshitaka; Nishimoto, Tetsuro; Tanaka, Hiroyuki; Kobayashi, Mikihiro; Ishihara, Tsuguo; Izumi, Hirokazu

    2015-04-28

    We studied energy transfer from AlN to doped Gd{sup 3+} ions as a function of the post-thermal annealing temperature. Gd-doped AlN thin films were deposited on fused-silica substrates using a reactive radio-frequency magnetron sputtering technique. The film is a c-axis oriented polycrystal. The intra-orbital electron transition in Gd{sup 3+} showed an atomically sharp luminescence at 3.9?eV (318?nm). The photoluminescence (PL) excitation spectrum exhibited a resonant peak, indicating efficient energy transfer from the host AlN crystal to Gd{sup 3+} ions. The PL intensity increases approximately ten times by thermal annealing. The PL decay lifetime becomes long with annealing, and mid-gap luminescence relating to the crystal defects in AlN was also found to be reduced by annealing. These results suggest that energy dissipation of excited carriers in AlN was suppressed by annealing, and the efficiency of energy transfer into Gd{sup 3+} was improved.

  7. Europium (Z=63) n=3-3 lines in the extreme ultraviolet: Na- through...

    Office of Scientific and Technical Information (OSTI)

    Springfield, VA at www.ntis.gov. Authors: Trabert, E ; Beiersdorfer, P ; Hell, N ; Brown, G V Publication Date: 2014-08-22 OSTI Identifier: 1228017 Report Number(s):...

  8. Advanced ultraviolet-resistant silver mirrors for use in solar reflectors

    DOE Patents [OSTI]

    Jorgensen, Gary J. (Pine, CO); Gee, Randy (Arvada, CO)

    2009-11-03

    A silver mirror construction that maintains a high percentage of hemispherical reflectance throughout the UV and visible spectrum when used in solar reflectors, comprising:a) a pressure sensitive adhesive layer positioned beneath a silver overlay;b) a polymer film disposed on the silver overlay;c) an adhesive layer positioned on the polymer film; andd) a UV screening acrylic film disposed on the adhesive layer.

  9. Bright high-repetition-rate source of narrowband extreme-ultraviolet...

    Office of Scientific and Technical Information (OSTI)

    ... Photonics 8, 437-441 (2014). 31. Ditmire, T., Crane, J. K., Nguyen, H., DaSilva, L. B. & Perry, M. D. Energy-yield and conversion efficiency measurements of high-order harmonic ...

  10. Enhanced memory effect via quantum confinement in 16?nm InN nanoparticles embedded in ZnO charge trapping layer

    SciTech Connect (OSTI)

    El-Atab, Nazek; Nayfeh, Ammar; Cimen, Furkan; Alkis, Sabri; Orta, Blend; Alevli, Mustafa; Dietz, Nikolaus; Okyay, Ali K.

    2014-06-23

    In this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO charge trapping layer is demonstrated. Atomic layer deposited Al{sub 2}O{sub 3} layers are used as tunnel and blocking oxides. The gate contacts are sputtered using a shadow mask which eliminates the need for any lithography steps. High frequency C-V{sub gate} measurements show that a memory effect is observed, due to the charging of the InN-NPs. With a low operating voltage of 4?V, the memory shows a noticeable threshold voltage (V{sub t}) shift of 2?V, which indicates that InN-NPs act as charge trapping centers. Without InN-NPs, the observed memory hysteresis is negligible. At higher programming voltages of 10?V, a memory window of 5?V is achieved and the V{sub t} shift direction indicates that electrons tunnel from channel to charge storage layer.

  11. Kelvin probe characterization of buried graphitic microchannels in single-crystal diamond

    SciTech Connect (OSTI)

    Bernardi, E. Battiato, A.; Olivero, P.; Vittone, E.; Picollo, F.

    2015-01-14

    In this work, we present an investigation by Kelvin Probe Microscopy (KPM) of buried graphitic microchannels fabricated in single-crystal diamond by direct MeV ion microbeam writing. Metal deposition of variable-thickness masks was adopted to implant channels with emerging endpoints and high temperature annealing was performed in order to induce the graphitization of the highly-damaged buried region. When an electrical current was flowing through the biased buried channel, the structure was clearly evidenced by KPM maps of the electrical potential of the surface region overlying the channel at increasing distances from the grounded electrode. The KPM profiling shows regions of opposite contrast located at different distances from the endpoints of the channel. This effect is attributed to the different electrical conduction properties of the surface and of the buried graphitic layer. The model adopted to interpret these KPM maps and profiles proved to be suitable for the electronic characterization of buried conductive channels, providing a non-invasive method to measure the local resistivity with a micrometer resolution. The results demonstrate the potential of the technique as a powerful diagnostic tool to monitor the functionality of all-carbon graphite/diamond devices to be fabricated by MeV ion beam lithography.

  12. Condenser for illuminating a ringfield camera with synchrotron emission light

    DOE Patents [OSTI]

    Sweatt, W.C.

    1996-04-30

    The present invention relates generally to the field of condensers for collecting light from a synchrotron radiation source and directing the light into a ringfield of a lithography camera. The present invention discloses a condenser comprising collecting, processing, and imaging optics. The collecting optics are comprised of concave and convex spherical mirrors that collect the light beams. The processing optics, which receive the light beams, are comprised of flat mirrors that converge and direct the light beams into a real entrance pupil of the camera in a symmetrical pattern. In the real entrance pupil are located flat mirrors, common to the beams emitted from the preceding mirrors, for generating substantially parallel light beams and for directing the beams toward the ringfield of a camera. Finally, the imaging optics are comprised of a spherical mirror, also common to the beams emitted from the preceding mirrors, images the real entrance pupil through the resistive mask and into the virtual entrance pupil of the camera. Thus, the condenser is comprised of a plurality of beams with four mirrors corresponding to a single beam plus two common mirrors. 9 figs.

  13. Condenser for illuminating a ringfield camera with synchrotron emission light

    DOE Patents [OSTI]

    Sweatt, William C. (13027 Arroyo de Vista, Albuquerque, NM 87111)

    1996-01-01

    The present invention relates generally to the field of condensers for collecting light from a synchrotron radiation source and directing the light into a ringfield of a lithography camera. The present invention discloses a condenser comprising collecting, processing, and imaging optics. The collecting optics are comprised of concave and convex spherical mirrors that collect the light beams. The processing optics, which receive the light beams, are comprised of flat mirrors that converge and direct the light beams into a real entrance pupil of the camera in a symmetrical pattern. In the real entrance pupil are located flat mirrors, common to the beams emitted from the preceding mirrors, for generating substantially parallel light beams and for directing the beams toward the ringfield of a camera. Finally, the imaging optics are comprised of a spherical mirror, also common to the beams emitted from the preceding mirrors, images the real entrance pupil through the resistive mask and into the virtual entrance pupil of the camera. Thus, the condenser is comprised of a plurality of beams with four mirrors corresponding to a single beam plus two common mirrors.

  14. Note: Deep ultraviolet Raman spectrograph with the laser excitation line down to 177.3 nm and its application

    SciTech Connect (OSTI)

    Jin, Shaoqing; University of the Chinese Academy of Sciences, Beijing 100049 ; Fan, Fengtao; Guo, Meiling; Zhang, Ying; Feng, Zhaochi E-mail: canli@dicp.ac.cn; Li, Can E-mail: canli@dicp.ac.cn

    2014-04-15

    Deep UV Raman spectrograph with the laser excitation line down to 177.3 nm was developed in this laboratory. An ellipsoidal mirror and a dispersed-subtractive triple monochromator were used to collect and disperse Raman light, respectively. The triple monochromator was arranged in a triangular configuration with only six mirrors used. 177.3 nm laser excited Raman spectrum with cut-off wavenumber down to 200 cm{sup ?1} and spectral resolution of 8.0 cm{sup ?1} can be obtained under the condition of high purity N{sub 2} purging. With the CC ? bond in Teflon selectively excited by the 177.3 nm laser, resonance Raman spectrum of Teflon with good quality was recorded on the home-built instrument and the ?-?{sup *} transition of CC bond was studied. The result demonstrates that deep UV Raman spectrograph is powerful for studying the systems with electronic transition located in the deep UV region.

  15. Plasma physical parameters along coronal-mass-ejection-driven shocks. I. Ultraviolet and white-light observations

    SciTech Connect (OSTI)

    Bemporad, A.; Susino, R.; Lapenta, G.

    2014-04-01

    In this work, UV and white-light (WL) coronagraphic data are combined to derive the full set of plasma physical parameters along the front of a shock driven by a coronal mass ejection. Pre-shock plasma density, shock compression ratio, speed, and inclination angle are estimated from WL data, while pre-shock plasma temperature and outflow velocity are derived from UV data. The Rankine-Hugoniot (RH) equations for the general case of an oblique shock are then applied at three points along the front located between 2.2 and 2.6 R {sub ☉} at the shock nose and at the two flanks. Stronger field deflection (by ∼46°), plasma compression (factor ∼2.7), and heating (factor ∼12) occur at the nose, while heating at the flanks is more moderate (factor 1.5-3.0). Starting from a pre-shock corona where protons and electrons have about the same temperature (T{sub p} ∼ T{sub e} ∼ 1.5 × 10{sup 6} K), temperature increases derived with RH equations could better represent the proton heating (by dissipation across the shock), while the temperature increase implied by adiabatic compression (factor ∼2 at the nose, ∼1.2-1.5 at the flanks) could be more representative of electron heating: the transit of the shock causes a decoupling between electron and proton temperatures. Derived magnetic field vector rotations imply a draping of field lines around the expanding flux rope. The shock turns out to be super-critical (sub-critical) at the nose (at the flanks), where derived post-shock plasma parameters can be very well approximated with those derived by assuming a parallel (perpendicular) shock.

  16. Role of OH radicals in the formation of oxygen molecules following vacuum ultraviolet photodissociation of amorphous solid water

    SciTech Connect (OSTI)

    Hama, Tetsuya; Yokoyama, Masaaki; Yabushita, Akihiro; Kawasaki, Masahiro

    2010-09-14

    Photodesorption of O{sub 2}(X {sup 3}{Sigma}{sub g}{sup -}) and O{sub 2}(a {sup 1}{Delta}{sub g}) from amorphous solid water at 90 K has been studied following photoexcitation within the first absorption band at 157 nm. Time-of-flight and rotational spectra of O{sub 2} reveal the translational and internal energy distributions, from which production mechanisms are deduced. Exothermic and endothermic reactions of OH+O({sup 3}P) are proposed as plausible formation mechanisms for O{sub 2}(X {sup 3}{Sigma}{sub g}{sup -} and a {sup 1}{Delta}{sub g}). To examine the contribution of the O({sup 3}P)+O({sup 3}P) recombination reaction to the O{sub 2} formation following 157 nm photolysis of amorphous solid water, O{sub 2} products following 193 nm photodissociation of SO{sub 2} adsorbed on amorphous solid water were also investigated.

  17. Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

    SciTech Connect (OSTI)

    Himwas, C.; Songmuang, R.; Le Si Dang; Bleuse, J.; Monroy, E.; Rapenne, L.; Sarigiannidou, E.

    2012-12-10

    We report on the structural and optical properties of AlGaN/AlN quantum dot (QD) superlattices synthesized by plasma-assisted molecular-beam epitaxy. Modifying the composition and geometry of the QDs, the peak emission wavelength can be shifted from 320 nm to 235 nm while keeping the internal quantum efficiency larger than 30%. The efficient carrier confinement is confirmed by the stability of the photoluminescence (PL) intensity and decay time, from low temperature up to 100 K. Above this threshold, the PL intensity decreases and the radiative lifetime increases due to carrier thermalization. We also identified the intraband electronic transition between the ground level of the conduction band and the first excited state confined along the growth axis (s-p{sub z}).

  18. Replication of a Holographic Ion-etched Spherical Blazed Grating for use at Extreme-Ultraviolet Wavelengths: Efficiency

    SciTech Connect (OSTI)

    Kowalski,M.; Barbee, T.; Hunter, W.

    2006-01-01

    Using synchrotron radiation, we have measured the efficiency at an angle of incidence of 10 deg of a holographic ion-etched spherical blazed grating and three of its fourth-generation replicas. The measured efficiency profile of replicas 1 and 3 prior to multilayer coating oscillated from thin-film interference produced by the replicas' Al/Al2O3?/SiO2 structure. A Mo2C/Si multilayer coating was applied to the master grating and replicas 1 and 2. After coating, the maximum grating efficiency occurred in the -2nd order and the maximum values were 12.4% at 143.8 Angstroms for the master and 11.6% at 145.2 Angstroms for replicas 1 and 2. On the basis of measurements obtained after coating, the derived groove efficiency was 22.2% for the master, 19.4% for replica 1, and 19.3% for replica 2. The groove efficiency of the uncoated replica 3 was 24.3% at 142.5 Angstroms. We find that the replicas are reasonably faithful copies of the ion-etched master, and models based on measured atomic force microscope groove profiles are in general agreement with measured results. However, subtle issues remain regarding the widths of the peak order profile and the location of its maximum wavelength.

  19. Ultraviolet laser-induced poling inhibition produces bulk domains in MgO-doped lithium niobate crystals

    SciTech Connect (OSTI)

    Boes, Andreas, E-mail: s3363819@student.rmit.edu.au; Steigerwald, Hendrik; Sivan, Vijay; Mitchell, Arnan [School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria 3001 (Australia); ARC Center for Ultra-high Bandwidth Devices for Optical Systems (CUDOS), RMIT University, Melbourne, Victoria 3001 (Australia); Yudistira, Didit [School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria 3001 (Australia); Wade, Scott [Faculty of Science, Engineering and Technology, Swinburne University of Technology, Hawthorn, Victoria 3122 (Australia); Mailis, Sakellaris [Optoelectronics Research Centre, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom); Soergel, Elisabeth [Institute of Physics, University of Bonn, Wegelerstr. 8, 53115 Bonn (Germany)

    2014-09-01

    We report the realization of high-resolution bulk domains achieved using a shallow, structured, domain inverted surface template obtained by UV laser-induced poling inhibition in MgO-doped lithium niobate. The quality of the obtained bulk domains is compared to those of the template and their application for second harmonic generation is demonstrated. The present method enables domain structures with a period length as small as 3??m to be achieved. Furthermore, we propose a potential physical mechanism that leads to the transformation of the surface template into bulk domains.

  20. SWIFT X-RAY AND ULTRAVIOLET MONITORING OF THE CLASSICAL NOVA V458 VUL (NOVA VUL 2007)

    SciTech Connect (OSTI)

    Ness, J.-U. [European Space Astronomy Centre, P.O. Box 78, 28691 Villanueva de la Canada, Madrid (Spain); Drake, J. J. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Beardmore, A. P.; Evans, P. A.; Osborne, J. P.; Page, K. L. [Department of Physics and Astronomy, University of Leicester, Leicester LE1 7RH (United Kingdom); Boyd, D. [BAA VSS, 5 Silver Lane, West Challow, Wantage, OX12 9TX (United Kingdom); Bode, M. F. [Astrophysics Research Institute, Liverpool John Moores University, Twelve Quays House, Egerton Wharf, Birkenhead CH41 1LD (United Kingdom); Brady, S. [AAVSO, 5 Melba Drive, Hudson, NH 03051 (United States); Gaensicke, B. T.; Steeghs, D. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Kitamoto, S.; Takei, D. [Department of Physics, Rikkyo University, 3-34-1 Nishi-Ikebukuro, Toshima, Tokyo 171-8501 (Japan); Knigge, C. [School of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ (United Kingdom); Miller, I. [BAA VSS, Furzehill House, Ilston, Swansea SA2 7LE (United Kingdom); Rodriguez-Gil, P. [Isaac Newton Group, PO Ap. de Correos 321, 38700 Sta. Cruz de la Palma (Spain); Schwarz, G. [Department of Geology and Astronomy, West Chester University, West Chester, PA 19383 (United States); Staels, B. [CBA Flanders, Alan Guth Observatory, Koningshofbaan 51, Hofstade, Aalst (Belgium); Tsujimoto, M. [Department of Astronomy and Astrophysics, Pennsylvania State University, 525 Davey Laboratory, University Park, PA 16802 (United States); Wesson, R. [Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT (United Kingdom)], E-mail: juness@sciops.esa.int (and others)

    2009-05-15

    We describe the highly variable X-ray and UV emission of V458 Vul (Nova Vul 2007), observed by Swift between 1 and 422 days after outburst. Initially bright only in the UV, V458 Vul became a variable hard X-ray source due to optically thin thermal emission at kT = 0.64 keV with an X-ray band unabsorbed luminosity of 2.3 x 10{sup 34} erg s{sup -1} during days 71-140. The X-ray spectrum at this time requires a low Fe abundance (0.2{sup +0.3} {sub -0.1} solar), consistent with a Suzaku measurement around the same time. On day 315 we find a new X-ray spectral component which can be described by a blackbody with temperature of kT = 23{sup +9} {sub -5} eV, while the previous hard X-ray component has declined by a factor of 3.8. The spectrum of this soft X-ray component resembles those typically seen in the class of supersoft sources (SSS) which suggests that the nova ejecta were starting to clear and/or that the white dwarf photosphere is shrinking to the point at which its thermal emission reaches into the X-ray band. We find a high degree of variability in the soft component with a flare rising by an order of magnitude in count rate in 0.2 days. In the following observations on days 342.4-383.6, the soft component was not seen, only to emerge again on day 397. The hard component continued to evolve, and we found an anticorrelation between the hard X-ray emission and the UV emission, yielding a Spearman rank probability of 97%. After day 397, the hard component was still present, was variable, and continued to fade at an extremely slow rate but could not be analyzed owing to pile-up contamination from the bright SSS component.