Sample records for ultraviolet lithography mask

  1. Reflective masks for extreme ultraviolet lithography

    SciTech Connect (OSTI)

    Nguyen, Khanh Bao

    1994-05-01T23:59:59.000Z

    Extreme ultraviolet lithographic masks are made by patterning multilayer reflective coatings with high normal incidence reflectivity. Masks can be patterned by depositing a patterned absorber layer above the coating or by etching the pattern directly into the coating itself. Electromagnetic simulations showed that absorber-overlayer masks have superior imaging characteristics over etched masks (less sensitive to incident angles and pattern profiles). In an EUVL absorber overlayer mask, defects can occur in the mask substrate, reflective coating, and absorber pattern. Electromagnetic simulations showed that substrate defects cause the most severe image degradation. A printability study of substrate defects for absorber overlayer masks showed that printability of 25 nm high substrate defects are comparable to defects in optical lithography. Simulations also indicated that the manner in which the defects are covered by multilayer reflective coatings can affect printability. Coverage profiles that result in large lateral spreading of defect geometries amplify the printability of the defects by increasing their effective sizes. Coverage profiles of Mo/Si coatings deposited above defects were studied by atomic force microscopy and TEM. Results showed that lateral spread of defect geometry is proportional to height. Undercut at defect also increases the lateral spread. Reductions in defect heights were observed for 0.15 {mu}m wide defect lines. A long-term study of Mo/Si coating reflectivity revealed that Mo/Si coatings with Mo as the top layer suffer significant reductions in reflectivity over time due to oxidation.

  2. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    light, opens the way to future generations of smaller, faster, and cheaper semiconductors. EUV lithography relies on specialized lenses made of curved mirrors with...

  3. Extreme ultraviolet mask substrate surface roughness effects on lithography patterning

    SciTech Connect (OSTI)

    George, Simi; Naulleau, Patrick; Salmassi, Farhad; Mochi, Iacopo; Gullikson, Eric; Goldberg, Kenneth; Anderson, Erik

    2010-06-21T23:59:59.000Z

    In extreme ultraviolet lithography exposure systems, mask substrate roughness induced scatter contributes to LER at the image plane. In this paper, the impact of mask substrate roughness on image plane speckle is explicitly evaluated. A programmed roughness mask was used to study the correlation between mask roughness metrics and wafer plane aerial image inspection. We find that the roughness measurements by top surface topography profile do not provide complete information on the scatter related speckle that leads to LER at the image plane. We suggest at wavelength characterization by imaging and/or scatter measurements into different frequencies as an alternative for a more comprehensive metrology of the mask substrate/multilayer roughness effects.

  4. Extreme ultraviolet lithography machine

    DOE Patents [OSTI]

    Tichenor, Daniel A. (Castro Valley, CA); Kubiak, Glenn D. (Livermore, CA); Haney, Steven J. (Tracy, CA); Sweeney, Donald W. (San Ramon, CA)

    2000-01-01T23:59:59.000Z

    An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

  5. Method for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Felter, T. E. (Livermore, CA); Kubiak, Glenn D. (Livermore, CA)

    1999-01-01T23:59:59.000Z

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  6. Method for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Felter, T. E. (727 Clara St., Livermore, Alameda County, CA 94550); Kubiak, G. D. (475 Maple St., Livermore, Alameda County, CA 94550)

    2000-01-01T23:59:59.000Z

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  7. Photoresist composition for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Felter, T. E. (Alameda County, CA); Kubiak, G. D. (Alameda County, CA)

    1999-01-01T23:59:59.000Z

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

  8. Validity of the thin mask approximation in extreme ultraviolet mask roughness simulations

    SciTech Connect (OSTI)

    Naulleau, Patrick; George, Simi

    2011-01-26T23:59:59.000Z

    In the case of extreme ultraviolet (EUV) lithography, modeling has shown that reflector phase roughness on the lithographic mask is a significant concern due to the image plan speckle it causes and the resulting line-edge roughness on imaged features. Modeling results have recently been used to determine the requirements for future production worthy masks yielding the extremely stringent specification of 50 pm rms roughness. Owing to the scale of the problem in terms of memory requirements, past modeling results have all been based on the thin mask approximation. EUV masks, however, are inherently three dimensional in nature and thus the question arises as to the validity of the thin mask approximation. Here we directly compare image plane speckle calculation results using the fast two dimensional thin mask model to rigorous finite-difference time-domain results and find the two methods to be comparable.

  9. Thermal management of masks for deep x-ray lithography.

    SciTech Connect (OSTI)

    Khounsary, A.; Chojnowski, D.; Mancini, D.C.; Lai, B.; Dejus, R.

    1997-11-18T23:59:59.000Z

    This paper addresses some options and techniques in the thermal management of masks used in deep x-ray lithography. The x-ray masks are thin plates made of low-atomic-number materials on which a patterned thin film of a high-atomic-number metal has been deposited. When they are exposed to an x-ray beam, part of the radiation is transmitted to replicate the pattern on a downstream photoresist, and the remainder is absorbed in the mask in the form of heat. This heat load can cause deformation of the mask and thus image distortion in the lithography process. The mask geometry considered in the present study is 100 mm x 100 mm in area, and about 0.1 to 2 mm thick. The incident radiation is a bending magnet x-ray beam having a footprint of 60 mm x 4 mm at the mask. The mask is scanned vertically about {+-} 30 mm so that a 60 mm x 60 mm area is exposed. the maximum absorbed heat load in the mask is 80 W, which is significantly greater than a few watts encountered in previous systems. In this paper, cooling techniques, substrate material selection, transient and steady state thermal and structural behavior, and other thermo-mechanical aspects of mask design are discussed. It is shown that, while diamond and graphite remain attractive candidates, at present beryllium is a more suitable material for this purpose and, when properly cooled, can provide the necessary dimensional tolerance.

  10. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    with SEMATECH, an international semiconductor industry consortium, to create a unique Fresnel zone-plate microscope on Advanced Light Source Beamline 11.3.2 called the SEMATECH...

  11. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)Integrated Codes | NationalCurriculum Introduction toLucas

  12. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)Integrated Codes | NationalCurriculum Introduction toLucasInvestigating Extreme

  13. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh SchoolIn OtherEnergyBPA-Film-Collection Sign

  14. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh SchoolIn OtherEnergyBPA-Film-Collection SignInvestigating Extreme

  15. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh SchoolIn OtherEnergyBPA-Film-Collection SignInvestigating

  16. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh SchoolIn OtherEnergyBPA-Film-Collection

  17. Investigating Extreme Ultraviolet Lithography Mask Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh SchoolIn OtherEnergyBPA-Film-CollectionInvestigating Extreme

  18. Vitreous carbon mask substrate for X-ray lithography

    DOE Patents [OSTI]

    Aigeldinger, Georg (Livermore, CA); Skala, Dawn M. (Fremont, CA); Griffiths, Stewart K. (Livermore, CA); Talin, Albert Alec (Livermore, CA); Losey, Matthew W. (Livermore, CA); Yang, Chu-Yeu Peter (Dublin, CA)

    2009-10-27T23:59:59.000Z

    The present invention is directed to the use of vitreous carbon as a substrate material for providing masks for X-ray lithography. The new substrate also enables a small thickness of the mask absorber used to pattern the resist, and this enables improved mask accuracy. An alternative embodiment comprised the use of vitreous carbon as a LIGA substrate wherein the VC wafer blank is etched in a reactive ion plasma after which an X-ray resist is bonded. This surface treatment provides a surface enabling good adhesion of the X-ray photoresist and subsequent nucleation and adhesion of the electrodeposited metal for LIGA mold-making while the VC substrate practically eliminates secondary radiation effects that lead to delamination of the X-ray resist form the substrate, the loss of isolated resist features, and the formation of a resist layer adjacent to the substrate that is insoluble in the developer.

  19. An EUV Fresnel zoneplate mask-imaging microscope for lithography generations reaching 8 nm

    E-Print Network [OSTI]

    An EUV Fresnel zoneplate mask-imaging microscope for lithography generations reaching 8 nm Kenneth lithography design rules. The proposed microscope features an array of user-selectable Fresnel zoneplate-EUV, Fresnel zoneplate microscope, the AIT has been in the vanguard of high-resolution EUV mask imaging

  20. Energy flow in light-coupling masks for lensless optical lithography

    E-Print Network [OSTI]

    Floreano, Dario

    Energy flow in light-coupling masks for lensless optical lithography Olivier J. F. Martin@zurich.ibm.com Abstract: We illustrate the propagation of light in a new type of coupling mask for lensless optical. Biebuck, B. Michel, O.J.F. Martin and N.B. Piller, "Light-coupling masks: an alternative, lensless

  1. Self-cleaning optic for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Klebanoff, Leonard E.; Stulen, Richard H.

    2003-12-16T23:59:59.000Z

    A multilayer reflective optic or mirror for lithographic applications, and particularly extreme ultraviolet (EUV) lithography, having a surface or "capping" layer which in combination with incident radiation and gaseous molecular species such as O.sub.2, H.sub.2, H.sub.2 O provides for continuous cleaning of carbon deposits from the optic surface. The metal capping layer is required to be oxidation resistant and capable of transmitting at least 90% of incident EUV radiation. Materials for the capping layer include Ru, Rh, Pd, Ir, Pt and Au and combinations thereof.

  2. Method for the protection of extreme ultraviolet lithography optics

    DOE Patents [OSTI]

    Grunow, Philip A.; Clift, Wayne M.; Klebanoff, Leonard E.

    2010-06-22T23:59:59.000Z

    A coating for the protection of optical surfaces exposed to a high energy erosive plasma. A gas that can be decomposed by the high energy plasma, such as the xenon plasma used for extreme ultraviolet lithography (EUVL), is injected into the EUVL machine. The decomposition products coat the optical surfaces with a protective coating maintained at less than about 100 .ANG. thick by periodic injections of the gas. Gases that can be used include hydrocarbon gases, particularly methane, PH.sub.3 and H.sub.2S. The use of PH.sub.3 and H.sub.2S is particularly advantageous since films of the plasma-induced decomposition products S and P cannot grow to greater than 10 .ANG. thick in a vacuum atmosphere such as found in an EUVL machine.

  3. Carbon contamination of extreme ultraviolet (EUV) mask and its effect on imaging

    E-Print Network [OSTI]

    Fan, Yu-Jen

    2009-01-01T23:59:59.000Z

    induced carbon contamination of extreme ultraviolet optics."potential LWR due to the contamination topography may be anet aI. , "Accelerated contamination testing of EUV masks."

  4. Extreme ultraviolet lithography: A few more pieces of the puzzle

    SciTech Connect (OSTI)

    Anderson, Christopher N.

    2009-05-20T23:59:59.000Z

    The work described in this dissertation has improved three essential components of extreme ultraviolet (EUV) lithography: exposure tools, photoresist, and metrology. Exposure tools. A field-averaging illumination stage is presented that enables nonuniform, high-coherence sources to be used in applications where highly uniform illumination is required. In an EUV implementation, it is shown that the illuminator achieves a 6.5% peak-to-valley intensity variation across the entire design field of view. In addition, a design for a stand-alone EUV printing tool capable of delivering 15 nm half-pitch sinusoidal fringes with available sources, gratings and nano-positioning stages is presented. It is shown that the proposed design delivers a near zero line-edge-rougness (LER) aerial image, something extremely attractive for the application of resist testing. Photoresist. Two new methods of quantifying the deprotection blur of EUV photoresists are described and experimentally demonstrated. The deprotection blur, LER, and sensitivity parameters of several EUV photoresists are quantified simultaneously as base weight percent, photoacid generator (PAG) weight percent, and post-exposure bake (PEB) temperature are varied. Two surprising results are found: (1) changing base weight percent does not significantly affect the deprotection blur of EUV photoresist, and (2) increasing PAG weight percent can simultaneously reduce LER and E-size in EUV photoresist. The latter result motivates the development of an EUV exposure statistics model that includes the effects of photon shot noise, the PAG spatial distribution, and the changing of the PAG distribution during the exposure. In addition, a shot noise + deprotection blur model is used to show that as deprotection blur becomes large relative to the size of the printed feature, LER reduction from improved counting statistics becomes dominated by an increase in LER due to reduced deprotection contrast. Metrology. Finally, this dissertation describes MOSAIC, a new wavefront metrology that enables complete wavefront recovery from print or aerial image based measurements. This new technique, based on measuring the local focal length of the optic at sampled positions in the pupil, recovers the curvature of the aberration and uses the curvature to recover the aberration itself. In a modeled EUV implementation, MOSAIC is shown to recover the SEMATECH Berkeley MET wavefront with a 4.2% RMS error: a 4% improvement over the reported errors of the original lateral shearing interferometry wavefront measurement.

  5. Flexible CO2 laser system for fundamental research related to an extreme ultraviolet lithography source

    E-Print Network [OSTI]

    Najmabadi, Farrokh

    Flexible CO2 laser system for fundamental research related to an extreme ultraviolet lithography 2009; published online 10 December 2009 A CO2 laser system with flexible parameters was developed 1010 W/cm2 . Utilizing this CO2 MOPA laser system, high conversion efficiency from laser to in-band 2

  6. Update on the SEMATECH 0.5 NA Extreme-Ultraviolet Lithography (EUVL) Microfield Exposure Tool (MET)

    E-Print Network [OSTI]

    Cummings, Kevin

    2014-01-01T23:59:59.000Z

    eld Exposure Tools with 0.5 NA,” Proc. SPIE TBP (2014) [6]microexposure tool at 0.5 NA for sub-16 nm lithography,&Update on the SEMATECH 0.5 NA Extreme Ultraviolet

  7. Low-cost method for producing extreme ultraviolet lithography optics

    DOE Patents [OSTI]

    Folta, James A. (Livermore, CA); Montcalm, Claude (Fort Collins, CO); Taylor, John S. (Livermore, CA); Spiller, Eberhard A. (Mt. Kisco, NY)

    2003-11-21T23:59:59.000Z

    Spherical and non-spherical optical elements produced by standard optical figuring and polishing techniques are extremely expensive. Such surfaces can be cheaply produced by diamond turning; however, the roughness in the diamond turned surface prevent their use for EUV lithography. These ripples are smoothed with a coating of polyimide before applying a 60 period Mo/Si multilayer to reflect a wavelength of 134 .ANG. and have obtained peak reflectivities close to 63%. The savings in cost are about a factor of 100.

  8. Corner Rounding in Photoresists for Extreme Ultraviolet Lithography

    SciTech Connect (OSTI)

    Anderson, Christopher N.; Naulleau, Patrick; Deng, Yunfei; Wallow, Thomas

    2008-06-01T23:59:59.000Z

    Deprotection blur in EUV resists fundamentally limits the smallest sized dense features that can be patterned in a single exposure and development step. Several metrics have recently been developed to explore the ways that different resist and process parameters affect the deprotection blur in EUV resists. One of these metrics is based on the imaging fidelity of a sharp corner on a large feature. As this metric has involved the close inspection of printing fidelity of corner features, it has brought attention to an interesting phenomena: corners print differently whether or not the remaining resist edge contains 270 degrees of resist or 90 degrees of resist. Here we present experimental data across a wide sampling of leading resists to show this effect is real and reproducible. They provide aerial image modeling results assuming thin and realistic mask models that show no corner bias between the aerial images in the 90-degree and 270-degree configurations. They also compare modeled patterning results assuming several resist models including the single blur, dual blur, and Prolith models, none of which reproduce the corner biasing that is observed experimentally.

  9. Commissioning a new EUV Fresnel zoneplate mask-imaging microscope for lithography generations reaching 8 nm

    E-Print Network [OSTI]

    Goldberg, Kenneth A.

    2014-01-01T23:59:59.000Z

    Commissioning a new EUV Fresnel zoneplate mask-imagingimaging system relies on Fresnel zoneplate lenses, which

  10. Effect of carbon contamination on the printing performance of extreme ultraviolet masks

    E-Print Network [OSTI]

    Effect of carbon contamination on the printing performance of extreme ultraviolet masks Yu-Jen Fan November 2009; accepted 2 February 2010; published 22 March 2010 Carbon contamination is a significant on imaging performance. Current carbon contamination research is primarily focused on the lifetime

  11. Carbon Contamination of Extreme Ultraviolet (EUV) Masks and its Effect on Imaging

    E-Print Network [OSTI]

    Carbon Contamination of Extreme Ultraviolet (EUV) Masks and its Effect on Imaging Yu-Jen Fan1 3. CXRO, Lawrence Berkeley National Laboratory, Berkeley CA ABSTRACT Carbon contamination of extreme and potential effects on imaging performance. In this work, a series of carbon contamination experiments were

  12. Commissioning an EUV mask microscope for lithography generations reaching 8 nm

    E-Print Network [OSTI]

    Goldberg, Kenneth A.

    2014-01-01T23:59:59.000Z

    Commissioning an EUV mask microscope for lithographycurrent status of the tool commissioning and the performance1. INTRODUCTION We are now commissioning a new, synchrotron—

  13. Repair of localized defects in multilayer-coated reticle blanks for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Stearns, Daniel G. (Los Altos, CA); Sweeney, Donald W. (San Ramon, CA); Mirkarimi, Paul B. (Sunol, CA)

    2004-11-23T23:59:59.000Z

    A method is provided for repairing defects in a multilayer coating layered onto a reticle blank used in an extreme ultraviolet lithography (EUVL) system. Using high lateral spatial resolution, energy is deposited in the multilayer coating in the vicinity of the defect. This can be accomplished using a focused electron beam, focused ion beam or a focused electromagnetic radiation. The absorbed energy will cause a structural modification of the film, producing a localized change in the film thickness. The change in film thickness can be controlled with sub-nanometer accuracy by adjusting the energy dose. The lateral spatial resolution of the thickness modification is controlled by the localization of the energy deposition. The film thickness is adjusted locally to correct the perturbation of the reflected field. For example, when the structural modification is a localized film contraction, the repair of a defect consists of flattening a mound or spreading out the sides of a depression.

  14. Spectral Control of Emission from Tin Doped Targets for Extreme Ultraviolet Lithography

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    control of emissions from tin doped targets for extremearray (UTA) emission around 13.5 nm from solid density tinand tin doped foam targets. Extreme ultraviolet (EUV)

  15. Method for generating extreme ultraviolet with mather-type plasma accelerators for use in Extreme Ultraviolet Lithography

    DOE Patents [OSTI]

    Hassanein, Ahmed (Bolingbrook, IL); Konkashbaev, Isak (Bolingbrook, IL)

    2006-10-03T23:59:59.000Z

    A device and method for generating extremely short-wave ultraviolet electromagnetic wave uses two intersecting plasma beams generated by two plasma accelerators. The intersection of the two plasma beams emits electromagnetic radiation and in particular radiation in the extreme ultraviolet wavelength. In the preferred orientation two axially aligned counter streaming plasmas collide to produce an intense source of electromagnetic radiation at the 13.5 nm wavelength. The Mather type plasma accelerators can utilize tin, or lithium covered electrodes. Tin, lithium or xenon can be used as the photon emitting gas source.

  16. VUV lithography

    DOE Patents [OSTI]

    George, Edward V. (Livermore, CA); Oster, Yale (Danville, CA); Mundinger, David C. (Stockton, CA)

    1990-01-01T23:59:59.000Z

    Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1700-1300A using xenon, krypton or argon; shorter wavelengths of 850-650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask.

  17. Method for plasma formation for extreme ultraviolet lithography-theta pinch

    DOE Patents [OSTI]

    Hassanein, Ahmed (Naperville, IL); Konkashbaev, Isak (Bolingbrook, IL); Rice, Bryan (Hillsboro, OR)

    2007-02-20T23:59:59.000Z

    A device and method for generating extremely short-wave ultraviolet electromagnetic wave, utilizing a theta pinch plasma generator to produce electromagnetic radiation in the range of 10 to 20 nm. The device comprises an axially aligned open-ended pinch chamber defining a plasma zone adapted to contain a plasma generating gas within the plasma zone; a means for generating a magnetic field radially outward of the open-ended pinch chamber to produce a discharge plasma from the plasma generating gas, thereby producing a electromagnetic wave in the extreme ultraviolet range; a collecting means in optical communication with the pinch chamber to collect the electromagnetic radiation; and focusing means in optical communication with the collecting means to concentrate the electromagnetic radiation.

  18. Passivating overcoat bilayer for multilayer reflective coatings for extreme ultraviolet lithography

    DOE Patents [OSTI]

    Montcalm, Claude (Livermore, CA); Stearns, Daniel G. (Los Altos, CA); Vernon, Stephen P. (Pleasanton, CA)

    1999-01-01T23:59:59.000Z

    A passivating overcoat bilayer is used for multilayer reflective coatings for extreme ultraviolet (EUV) or soft x-ray applications to prevent oxidation and corrosion of the multilayer coating, thereby improving the EUV optical performance. The overcoat bilayer comprises a layer of silicon or beryllium underneath at least one top layer of an elemental or a compound material that resists oxidation and corrosion. Materials for the top layer include carbon, palladium, carbides, borides, nitrides, and oxides. The thicknesses of the two layers that make up the overcoat bilayer are optimized to produce the highest reflectance at the wavelength range of operation. Protective overcoat systems comprising three or more layers are also possible.

  19. Table-top Extreme Ultraviolet Laser Aerial Imaging of Lithographic Masks

    E-Print Network [OSTI]

    Brizuela, F.

    2012-01-01T23:59:59.000Z

    Table-top Extreme Ultraviolet Laser Aerial Imaging ofmasks realized using a table-top aerial imaging systembased on a table-top X=\\3.2 laser. © 2 0 0 9 Optical Society

  20. Method and apparatus for inspecting reflection masks for defects

    DOE Patents [OSTI]

    Bokor, Jeffrey (Oakland, CA); Lin, Yun (Berkeley, CA)

    2003-04-29T23:59:59.000Z

    An at-wavelength system for extreme ultraviolet lithography mask blank defect detection is provided. When a focused beam of wavelength 13 nm is incident on a defective region of a mask blank, three possible phenomena can occur. The defect will induce an intensity reduction in the specularly reflected beam, scatter incoming photons into an off-specular direction, and change the amplitude and phase of the electric field at the surface which can be monitored through the change in the photoemission current. The magnitude of these changes will depend on the incident beam size, and the nature, extent and size of the defect. Inspection of the mask blank is performed by scanning the mask blank with 13 nm light focused to a spot a few .mu.m in diameter, while measuring the reflected beam intensity (bright field detection), the scattered beam intensity (dark-field detection) and/or the change in the photoemission current.

  1. Maskless, resistless ion beam lithography

    SciTech Connect (OSTI)

    Ji, Qing

    2003-03-10T23:59:59.000Z

    As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O{sub 2}{sup +}, BF{sub 2}{sup +}, P{sup +} etc., for surface modification and doping applications. With optimized source condition, around 85% of BF{sub 2}{sup +}, over 90% of O{sub 2}{sup +} and P{sup +} have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He{sup +} beam is as high as 440 A/cm{sup 2} {center_dot} Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O{sub 2}{sup +} ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O{sub 2}{sup +} ions with the dose of 10{sup 15} cm{sup -2}. The oxide can then serve as a hard mask for patterning of the Si film. The process flow and the experimental results for directly patterned poly-Si features are presented. The formation of shallow pn-junctions in bulk silicon wafers by scanning focused P{sup +} beam implantation at 5 keV is also presented. With implantation dose of around 10{sup 16} cm{sup -2}, the electron concentration is about 2.5 x 10{sup 18} cm{sup -3} and electron mobility is around 200 cm{sup 2}/V{center_dot}s. To demonstrate the suitability of scanning FIB lithography for the manufacture of integrated circuit devices, SOI MOSFET fabrication using the maskless, resistless ion beam lithography is demonstrated. An array of microcolumns can be built by stacking multi-aperture electrode and insulator layers. Because the multicusp plasma source can achieve uniform ion density over a large area, it can be used in conjunction with the array of microcolumns, for massively parallel FIB processing to achieve reasonable exposure throughput.

  2. XUV free-electron laser-based projection lithography systems

    SciTech Connect (OSTI)

    Newnam, B.E.

    1990-01-01T23:59:59.000Z

    Free-electron laser sources, driven by rf-linear accelerators, have the potential to operate in the extreme ultraviolet (XUV) spectral range with more than sufficient average power for high-volume projection lithography. For XUV wavelengths from 100 nm to 4 nm, such sources will enable the resolution limit of optical projection lithography to be extended from 0.25 {mu}m to 0.05{mu}m and with an adequate total depth of focus (1 to 2 {mu}m). Recent developments of a photoinjector of very bright electron beams, high-precision magnetic undulators, and ring-resonator cavities raise our confidence that FEL operation below 100 nm is ready for prototype demonstration. We address the motivation for an XUV FEL source for commercial microcircuit production and its integration into a lithographic system, include reflecting reduction masks, reflecting XUV projection optics and alignment systems, and surface-imaging photoresists. 52 refs., 7 figs.

  3. Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer

    DOE Patents [OSTI]

    Cardinale, Gregory F. (Oakland, CA)

    2002-01-01T23:59:59.000Z

    A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.

  4. Optimization of extreme ultraviolet photons emission and collection in mass-limited laser produced plasmas for lithography application

    E-Print Network [OSTI]

    Harilal, S. S.

    Optimization of extreme ultraviolet photons emission and collection in mass-limited laser produced in DPP or with pre-pulsing in LPP provide wide area for optimization in regards to conversion efficiency and collection as well as calculating photons source location and size. We optimized several parameters of dual

  5. Diffractive optics for maskless lithography and imaging

    E-Print Network [OSTI]

    Menon, Rajesh, 1976-

    2003-01-01T23:59:59.000Z

    Semiconductor industry has primarily been driven by the capability of lithography to pattern smaller and smaller features. However due to increasing mask costs and complexity, and increasing tool costs, the state-of-the-art ...

  6. Carbon contamination topography analysis of EUV masks

    E-Print Network [OSTI]

    Fan, Y.-J.

    2010-01-01T23:59:59.000Z

    induced carbon contamination of extreme ultraviolet optics,"and A. Izumi. "Carbon contamination of EL'V mask: filmEffect of Carbon Contamination on the Printing Performance

  7. Critical illumination condenser for x-ray lithography

    DOE Patents [OSTI]

    Cohen, S.J.; Seppala, L.G.

    1998-04-07T23:59:59.000Z

    A critical illumination condenser system is disclosed, particularly adapted for use in extreme ultraviolet (EUV) projection lithography based on a ring field imaging system and a laser produced plasma source. The system uses three spherical mirrors and is capable of illuminating the extent of the mask plane by scanning either the primary mirror or the laser plasma source. The angles of radiation incident upon each mirror of the critical illumination condenser vary by less than eight (8) degrees. For example, the imaging system in which the critical illumination condenser is utilized has a 200 {micro}m source and requires a magnification of 26. The three spherical mirror system constitutes a two mirror inverse Cassegrain, or Schwarzschild configuration, with a 25% area obstruction (50% linear obstruction). The third mirror provides the final pupil and image relay. The mirrors include a multilayer reflective coating which is reflective over a narrow bandwidth. 6 figs.

  8. An Ice Lithography Instrument Anpan Han 1, John Chervinsky2

    E-Print Network [OSTI]

    Page 1 An Ice Lithography Instrument Anpan Han 1, John Chervinsky2 , Daniel Branton3 , and J. A a new nano-patterning method called ice lithography, where ice is used as the resist. Water vapor. The vapor condenses, covering the sample with an amorphous layer of ice. To form a lift-off mask, ice

  9. Mask fabrication process

    DOE Patents [OSTI]

    Cardinale, Gregory F. (Oakland, CA)

    2000-01-01T23:59:59.000Z

    A method for fabricating masks and reticles useful for projection lithography systems. An absorber layer is conventionally patterned using a pattern and etch process. Following the step of patterning, the entire surface of the remaining top patterning photoresist layer as well as that portion of an underlying protective photoresist layer where absorber material has been etched away is exposed to UV radiation. The UV-exposed regions of the protective photoresist layer and the top patterning photoresist layer are then removed by solution development, thereby eliminating the need for an oxygen plasma etch and strip and chances for damaging the surface of the substrate or coatings.

  10. Virtual mask digital electron beam lithography

    DOE Patents [OSTI]

    Baylor, Larry R. (Farragut, TN); Thomas, Clarence E. (Knoxville, TN); Voelkl, Edgar (Oak Ridge, TN); Moore, James A. (Powell, TN); Simpson, Michael L. (Knoxville, TN); Paulus, Michael J. (Knoxville, TN)

    1999-01-01T23:59:59.000Z

    Systems and methods for direct-to-digital holography are described. An apparatus includes a laser; a beamsplitter optically coupled to the laser; a reference beam mirror optically coupled to the beamsplitter; an object optically coupled to the beamsplitter, a focusing lens optically coupled to both the reference beam mirror and the object; and a digital recorder optically coupled to the focusing lens. A reference beam is incident upon the reference beam mirror at a non-normal angle, and the reference beam and an object beam are focused by the focusing lens at a focal plane of the digital recorder to form an image. The systems and methods provide advantages in that computer assisted holographic measurements can be made.

  11. Inspection of lithographic mask blanks for defects

    DOE Patents [OSTI]

    Sommargren, Gary E. (Santa Cruz, CA)

    2001-01-01T23:59:59.000Z

    A visible light method for detecting sub-100 nm size defects on mask blanks used for lithography. By using optical heterodyne techniques, detection of the scattered light can be significantly enhanced as compared to standard intensity detection methods. The invention is useful in the inspection of super-polished surfaces for isolated surface defects or particulate contamination and in the inspection of lithographic mask or reticle blanks for surface defects or bulk defects or for surface particulate contamination.

  12. Dynamics and manipulation of the dominant 13.5 nm in-band extreme ultraviolet emitting region of laser-produced Sn plasmas

    E-Print Network [OSTI]

    Yuspeh, Samuel Edward

    2011-01-01T23:59:59.000Z

    manufacturing (HVM) of semiconductor microchips with nodes 32 nm and below is extreme ultraviolet (EUV) lithography using laser

  13. Maskless lithography

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Stulen, Richard H. (Livermore, CA)

    1999-01-01T23:59:59.000Z

    The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.

  14. Absorbance modulation optical lithography

    E-Print Network [OSTI]

    Tsai, Hsin-Yu Sidney

    2007-01-01T23:59:59.000Z

    In this thesis, the concept of absorbance-modulation optical lithography (AMOL) is described, and the feasibility experimentally verified. AMOL is an implementation of nodal lithography, which is not bounded by the diffraction ...

  15. alpha-class extreme ultraviolet: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vacuum Society. S0734-211X 00 02506-3 I. INTRODUCTION EUV lithography optics require 5 Solar Dynamics Observatory Extreme Ultraviolet Variability Experiment Geosciences Websites...

  16. Diffractive element in extreme-UV lithography condenser

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Ray-Chaudhurl, Avijit K. (Livermore, CA)

    2000-01-01T23:59:59.000Z

    Condensers having a mirror with a diffraction grating in projection lithography using extreme ultra-violet significantly enhances critical dimension control. The diffraction grating has the effect of smoothing the illumination at the camera's entrance pupil with minimum light loss. Modeling suggests that critical dimension control for 100 nm features can be improved from 3 nm to less than about 0.5 nm.

  17. Diffractive element in extreme-UV lithography condenser

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Ray-Chaudhuri, Avijit (Livermore, CA)

    2001-01-01T23:59:59.000Z

    Condensers having a mirror with a diffraction grating in projection lithography using extreme ultra-violet significantly enhances critical dimension control. The diffraction grating has the effect of smoothing the illumination at the camera's entrance pupil with minimum light loss. Modeling suggests that critical dimension control for 100 nm features can be improved from 3 nm to less than about 0.5 nm.

  18. Tailoring plasmon resonances in the deep-ultraviolet by size-tunable fabrication of aluminum nanostructures

    SciTech Connect (OSTI)

    Taguchi, Atsushi [Nanophotonics Laboratory, RIKEN, Wako, Saitama 351-0198 (Japan); Saito, Yuika; Watanabe, Koichi; Yijian, Song [Department of Applied Physics, Osaka University, Suita, Osaka 565-0871 (Japan); Kawata, Satoshi [Nanophotonics Laboratory, RIKEN, Wako, Saitama 351-0198 (Japan); Department of Applied Physics, Osaka University, Suita, Osaka 565-0871 (Japan)

    2012-08-20T23:59:59.000Z

    Localized surface plasmon resonances were controlled at deep-ultraviolet (DUV) wavelengths by fabricating aluminum (Al) nanostructures in a size-controllable manner. Plasmon resonances were obtained at wavelengths from near-UV down to 270 nm (4.6 eV) depending on the fabricated structure size. Such precise size control was realized by the nanosphere lithography technique combined with additional microwave heating to shrink the spaces in a close-packed monolayer of colloidal nanosphere masks. By adjusting the microwave heating time, the sizes of the Al nanostructures could be controlled from 80 nm to 50 nm without the need to use nanosphere beads of different sizes. With the outstanding controllability and versatility of the presented fabrication technique, the fabricated Al nanostructure is promising for use as a DUV plasmonic substrate, a light-harvesting platform for mediating strong light-matter interactions between UV photons and molecules placed near the metal nanostructure.

  19. Automation of soft lithography

    E-Print Network [OSTI]

    Kim, Hyung-Jun

    2006-01-01T23:59:59.000Z

    This dissertation is a final documentation of the project whose goal is demonstrating manufacturability of soft lithography. Specifically, our target is creating micron scale patterns of resists on a 3 square inch, relatively ...

  20. Contact thermal lithography

    E-Print Network [OSTI]

    Schmidt, Aaron Jerome, 1979-

    2004-01-01T23:59:59.000Z

    Contact thermal lithography is a method for fabricating microscale patterns using heat transfer. In contrast to photolithography, where the minimum achievable feature size is proportional to the wavelength of light used ...

  1. Carbon contamination topography analysis of EUV masks

    SciTech Connect (OSTI)

    Fan, Y.-J.; Yankulin, L.; Thomas, P.; Mbanaso, C.; Antohe, A.; Garg, R.; Wang, Y.; Murray, T.; Wuest, A.; Goodwin, F.; Huh, S.; Cordes, A.; Naulleau, P.; Goldberg, K. A.; Mochi, I.; Gullikson, E.; Denbeaux, G.

    2010-03-12T23:59:59.000Z

    The impact of carbon contamination on extreme ultraviolet (EUV) masks is significant due to throughput loss and potential effects on imaging performance. Current carbon contamination research primarily focuses on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on absorbing features and the printed images, as well as impacting the efficiency of cleaning process. In this work, several different techniques were used to determine possible contamination topography. Lithographic simulations were also performed and the results compared with the experimental data.

  2. M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features

    DOE Patents [OSTI]

    Brueck, Steven R.J. (Albuquerque, NM); Chen, Xiaolan (Albuquerque, NM); Zaidi, Saleem (Albuquerque, NM); Devine, Daniel J. (Los Gatos, CA)

    1998-06-02T23:59:59.000Z

    Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.

  3. Ion beam lithography system

    DOE Patents [OSTI]

    Leung, Ka-Ngo

    2005-08-02T23:59:59.000Z

    A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.

  4. Electron caustic lithography

    SciTech Connect (OSTI)

    Kennedy, S. M.; Zheng, C. X.; Tang, W. X.; Paganin, D. M.; Jesson, D. E. [School of Physics, Monash University, Victoria, 3800 (Australia); Fu, J. [Department of Mechanical and Aerospace Engineering, Monash University, Victoria, 3800 (Australia)

    2012-06-15T23:59:59.000Z

    A maskless method of electron beam lithography is described which uses the reflection of an electron beam from an electrostatic mirror to produce caustics in the demagnified image projected onto a resist-coated wafer. By varying the electron optics, e.g. via objective lens defocus, both the morphology and dimensions of the caustic features may be controlled, producing a range of bright and tightly focused projected features. The method is illustrated for line and fold caustics and is complementary to other methods of reflective electron beam lithography.

  5. Development of free-electron lasers for xuv projection lithography

    SciTech Connect (OSTI)

    Newnam, B.E.

    1990-01-01T23:59:59.000Z

    Future rf-linac-driven FELs, operating in the range from 4 nm to 100 nm, could be excellent exposure tools for extending the resolution limit of projection optical lithography to {le}0.1 {mu}m and with adequate total depth of focus (1 to 2 {mu}m). When operated at a moderate duty rate of {ge}1%, XUV FELs should be able to supply sufficient average power to support high-volume chip production. Recent developments of the electron beam, magnetic undulator, and resonator mirrors are described which raise our expectation that FEL operation below 100 nm is almost ready for demonstration. Included as a supplement is a review of initial design studies of the reflecting XUV projection optics, fabrication of reflection masks, characterization of photoresists, and the first experimental demonstrations of the capability of projection lithography with 14-nm radiation to produce lines and spaces as small as 0.05 {mu}m. 88 refs., 10 figs.

  6. Carbon Contamination Topography Analysis of EUV Masks Yu-Jen Fan1

    E-Print Network [OSTI]

    Carbon Contamination Topography Analysis of EUV Masks Yu-Jen Fan1 , Leonid Yankulin1 , Petros ABSTRACT The impact of carbon contamination on extreme ultraviolet (EUV) masks is significant due to throughput loss and potential effects on imaging performance. Current carbon contamination research primarily

  7. Soft x-ray reduction camera for submicron lithography

    DOE Patents [OSTI]

    Hawryluk, Andrew M. (2708 Rembrandt Pl., Modesto, CA 95356); Seppala, Lynn G. (7911 Mines Rd., Livermore, CA 94550)

    1991-01-01T23:59:59.000Z

    Soft x-ray projection lithography can be performed using x-ray optical components and spherical imaging lenses (mirrors), which form an x-ray reduction camera. The x-ray reduction is capable of projecting a 5x demagnified image of a mask onto a resist coated wafer using 4.5 nm radiation. The diffraction limited resolution of this design is about 135 nm with a depth of field of about 2.8 microns and a field of view of 0.2 cm.sup.2. X-ray reflecting masks (patterned x-ray multilayer mirrors) which are fabricated on thick substrates and can be made relatively distortion free are used, with a laser produced plasma for the source. Higher resolution and/or larger areas are possible by varying the optic figures of the components and source characteristics.

  8. Soft x-ray reduction camera for submicron lithography

    DOE Patents [OSTI]

    Hawryluk, A.M.; Seppala, L.G.

    1991-03-26T23:59:59.000Z

    Soft x-ray projection lithography can be performed using x-ray optical components and spherical imaging lenses (mirrors), which form an x-ray reduction camera. The x-ray reduction is capable of projecting a 5x demagnified image of a mask onto a resist coated wafer using 4.5 nm radiation. The diffraction limited resolution of this design is about 135 nm with a depth of field of about 2.8 microns and a field of view of 0.2 cm[sup 2]. X-ray reflecting masks (patterned x-ray multilayer mirrors) which are fabricated on thick substrates and can be made relatively distortion free are used, with a laser produced plasma for the source. Higher resolution and/or larger areas are possible by varying the optic figures of the components and source characteristics. 9 figures.

  9. Programmable imprint lithography template

    DOE Patents [OSTI]

    Cardinale, Gregory F. (Oakland, CA); Talin, Albert A. (Livermore, CA)

    2006-10-31T23:59:59.000Z

    A template for imprint lithography (IL) that reduces significantly template production costs by allowing the same template to be re-used for several technology generations. The template is composed of an array of spaced-apart moveable and individually addressable rods or plungers. Thus, the template can be configured to provide a desired pattern by programming the array of plungers such that certain of the plungers are in an "up" or actuated configuration. This arrangement of "up" and "down" plungers forms a pattern composed of protruding and recessed features which can then be impressed onto a polymer film coated substrate by applying a pressure to the template impressing the programmed configuration into the polymer film. The pattern impressed into the polymer film will be reproduced on the substrate by subsequent processing.

  10. Wafer chamber having a gas curtain for extreme-UV lithography

    DOE Patents [OSTI]

    Kanouff, Michael P. (Livermore, CA); Ray-Chaudhuri, Avijit K. (Livermore, CA)

    2001-01-01T23:59:59.000Z

    An EUVL device includes a wafer chamber that is separated from the upstream optics by a barrier having an aperture that is permeable to the inert gas. Maintaining an inert gas curtain in the proximity of a wafer positioned in a chamber of an extreme ultraviolet lithography device can effectively prevent contaminants from reaching the optics in an extreme ultraviolet photolithography device even though solid window filters are not employed between the source of reflected radiation, e.g., the camera, and the wafer. The inert gas removes the contaminants by entrainment.

  11. IIII--E. Scanning Probe LithographyE. Scanning Probe Lithography Voltage pulse

    E-Print Network [OSTI]

    Liu, Kai

    Molnar, PRB 57 14028 (1998) Lithography Liu, UCD Phy250-1, 2011, NanoFab34 Contamination PRB 57 14028 GrowthStep Growth--66 Annealed NaCl substrates Sugawara & Scheinfein, PRB 56, 8499 (1997). Lithography

  12. X-ray lithography source

    DOE Patents [OSTI]

    Piestrup, Melvin A. (Woodside, CA); Boyers, David G. (Mountain View, CA); Pincus, Cary (Sunnyvale, CA)

    1991-01-01T23:59:59.000Z

    A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and elminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an exellent moderate-priced X-ray source for lithography.

  13. X-ray lithography source

    DOE Patents [OSTI]

    Piestrup, M.A.; Boyers, D.G.; Pincus, C.

    1991-12-31T23:59:59.000Z

    A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits is disclosed. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and eliminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an excellent moderate-priced X-ray source for lithography. 26 figures.

  14. Fabrication of high-T sub c Josephson effect devices by natural lithography

    SciTech Connect (OSTI)

    Dozier, W.D.; Daly, K.P.; Hu, R.; Platt, C.E.; Wire, M.S. (TRW Space and Technology Group, Redondo Beach, CA (United States))

    1991-03-01T23:59:59.000Z

    This paper reports on deposited thin films of YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) on LaAlO{sub 3} substrates previously textured with submicron which features by the use of natural lithography (the use of monolayers of polystyrene microspheres as lithographic masks). This weakens the superconducting properties due to reduced connectivity in the film. Devices fabricated using localized textured regions have shown Josephson coupling. Weak links have shown Shapiro steps at the expected voltage intervals. Magnetic field induced modulation in the detected RF voltage with the geometrically correct periodicity has been observed in RF SQUIDs over a limited temperature range.

  15. Coatings on reflective mask substrates

    DOE Patents [OSTI]

    Tong, William Man-Wai (Oakland, CA); Taylor, John S. (Livermore, CA); Hector, Scott D. (Oakland, CA); Mangat, Pawitter J. S. (Gilbert, AZ); Stivers, Alan R. (San Jose, CA); Kofron, Patrick G. (San Jose, CA); Thompson, Matthew A. (Austin, TX)

    2002-01-01T23:59:59.000Z

    A process for creating a mask substrate involving depositing: 1) a coating on one or both sides of a low thermal expansion material EUVL mask substrate to improve defect inspection, surface finishing, and defect levels; and 2) a high dielectric coating, on the backside to facilitate electrostatic chucking and to correct for any bowing caused by the stress imbalance imparted by either other deposited coatings or the multilayer coating of the mask substrate. An film, such as TaSi, may be deposited on the front side and/or back of the low thermal expansion material before the material coating to balance the stress. The low thermal expansion material with a silicon overlayer and a silicon and/or other conductive underlayer enables improved defect inspection and stress balancing.

  16. Sub-10-nm lithography with light-ion beams

    E-Print Network [OSTI]

    Winston, Donald, Ph. D. Massachusetts Institute of Technology

    2012-01-01T23:59:59.000Z

    Scanning-electron-beam lithography (SEBL) is the workhorse of nanoscale lithography in part because of the high brightness of the Schottky source of electrons, but also benefiting from decades of incremental innovation and ...

  17. Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist

    E-Print Network [OSTI]

    Winston, Donald

    A scanning-helium-ion-beam microscope is now commercially available. This microscope can be used to perform lithography similar to, but of potentially higher resolution than, scanning electron-beam lithography. This article ...

  18. Method for mask repair using defect compensation

    DOE Patents [OSTI]

    Sweeney, Donald W. (San Ramon, CA); Ray-Chaudhuri, Avijit K. (Livermore, CA)

    2001-01-01T23:59:59.000Z

    A method for repair of amplitude and/or phase defects in lithographic masks. The method involves modifying or altering a portion of the absorber pattern on the surface of the mask blank proximate to the mask defect to compensate for the local disturbance (amplitude or phase) of the optical field due to the defect.

  19. II. Types of LithographyII. Types of Lithography A. Photolithography (optical, UV, EUV) F. Step Growth

    E-Print Network [OSTI]

    Liu, Kai

    lithography S i b I. Self-Assembly J NanotemplatesE. Scanning Probe Voltage pulse CVD Local electrodeposition J. Nanotemplates Diblock copolymer Sphere Alumina membraneLocal electrodeposition Dip Interference Lithography FIG. 1. SEM images of nickel dot arrays fabricated by x-ray interference lithography

  20. Magnetic nanostructures patterned by block copolymer lithography

    E-Print Network [OSTI]

    Ilievski, Filip, 1980-

    2008-01-01T23:59:59.000Z

    The aim of this research was twofold: understanding the methods of patterning magnetic films using self-assembled block copolymer masks and examining the magnetic reversal mechanisms of as deposited and patterned magnetic ...

  1. EUV lithography cost of ownership analysis

    SciTech Connect (OSTI)

    Hawryluk, A.M.; Ceglio, N.M.

    1995-01-19T23:59:59.000Z

    The cost of fabricating state-of-the-art integrated circuits (ICs) has been increasing and it will likely be economic rather than technical factors that ultimately limit the progress of ICs toward smaller devices. It is estimated that lithography currently accounts for approximately one-third the total cost of fabricating modem ICs({sup 1}). It is expected that this factor will be fairly stable for the forseeable future, and as a result, any lithographic process must be cost-effective before it can be considered for production. Additionally, the capital equipment cost for a new fabrication facility is growing at an exponential rate (2); it will soon require a multibillion dollar investment in capital equipment alone to build a manufacturing facility. In this regard, it is vital that any advanced lithography candidate justify itself on the basis of cost effectiveness. EUV lithography is no exception and close attention to issues of wafer fabrication costs have been a hallmark of its early history. To date, two prior cost analyses have been conducted for EUV lithography (formerly called {open_quotes}Soft X-ray Projection Lithography{close_quotes}). The analysis by Ceglio, et. al., provided a preliminary system design, set performance specifications and identified critical technical issues for cost control. A follow-on analysis by Early, et.al., studied the impact of issues such as step time, stepper overhead, tool utilization, escalating photoresist costs and limited reticle usage on wafer exposure costs. This current study provides updated system designs and specifications and their impact on wafer exposure costs. In addition, it takes a first cut at a preliminary schematic of an EUVL fabrication facility along with an estimate of the capital equipment costs for such a facility.

  2. MoRu/Be multilayers for extreme ultraviolet applications

    DOE Patents [OSTI]

    Bajt, Sasa C. (Livermore, CA); Wall, Mark A. (Stockton, CA)

    2001-01-01T23:59:59.000Z

    High reflectance, low intrinsic roughness and low stress multilayer systems for extreme ultraviolet (EUV) lithography comprise amorphous layers MoRu and crystalline Be layers. Reflectance greater than 70% has been demonstrated for MoRu/Be multilayers with 50 bilayer pairs. Optical throughput of MoRu/Be multilayers can be 30-40% higher than that of Mo/Be multilayer coatings. The throughput can be improved using a diffusion barrier to make sharper interfaces. A capping layer on the top surface of the multilayer improves the long-term reflectance and EUV radiation stability of the multilayer by forming a very thin native oxide that is water resistant.

  3. Nanofabrication on unconventional substrates using transferred hard masks

    E-Print Network [OSTI]

    Li, Luozhou

    A major challenge in nanofabrication is to pattern unconventional substrates that cannot be processed for a variety of reasons, such as incompatibility with spin coating, electron beam lithography, optical lithography, or ...

  4. Multilevel interference lithography--fabricating sub-wavelength periodic nanostructures

    E-Print Network [OSTI]

    Chang, Chih-Hao, 1980-

    2008-01-01T23:59:59.000Z

    Periodic nanostructures have many exciting applications, including high-energy spectroscopy, patterned magnetic media, photonic crystals, and templates for self-assembly. Interference lithography (IL) is an attractive ...

  5. Resolution Improvement and Pattern Generator Development for theMaskless Micro-Ion-Beam Reduction Lithography System

    SciTech Connect (OSTI)

    Jiang, Ximan

    2006-05-18T23:59:59.000Z

    The shrinking of IC devices has followed the Moore's Law for over three decades, which states that the density of transistors on integrated circuits will double about every two years. This great achievement is obtained via continuous advance in lithography technology. With the adoption of complicated resolution enhancement technologies, such as the phase shifting mask (PSM), the optical proximity correction (OPC), optical lithography with wavelength of 193 nm has enabled 45 nm printing by immersion method. However, this achievement comes together with the skyrocketing cost of masks, which makes the production of low volume application-specific IC (ASIC) impractical. In order to provide an economical lithography approach for low to medium volume advanced IC fabrication, a maskless ion beam lithography method, called Maskless Micro-ion-beam Reduction Lithography (MMRL), has been developed in the Lawrence Berkeley National Laboratory. The development of the prototype MMRL system has been described by Dr. Vinh Van Ngo in his Ph.D. thesis. But the resolution realized on the prototype MMRL system was far from the design expectation. In order to improve the resolution of the MMRL system, the ion optical system has been investigated. By integrating a field-free limiting aperture into the optical column, reducing the electromagnetic interference and cleaning the RF plasma, the resolution has been improved to around 50 nm. Computational analysis indicates that the MMRL system can be operated with an exposure field size of 0.25 mm and a beam half angle of 1.0 mrad on the wafer plane. Ion-ion interactions have been studied with a two-particle physics model. The results are in excellent agreement with those published by the other research groups. The charge-interaction analysis of MMRL shows that the ion-ion interactions must be reduced in order to obtain a throughput higher than 10 wafers per hour on 300-mm wafers. In addition, two different maskless lithography strategies have been studied. The dependence of the throughput with the exposure field size and the speed of the mechanical stage has been investigated. In order to perform maskless lithography, different micro-fabricated pattern generators have been developed for the MMRL system. Ion beamlet switching has been successfully demonstrated on the MMRL system. A positive bias voltage around 10 volts is sufficient to switch off the ion current on the micro-fabricated pattern generators. Some unexpected problems, such as the high-energy secondary electron radiations, have been discovered during the experimental investigation. Thermal and structural analysis indicates that the aperture displacement error induced by thermal expansion can satisfy the 3{delta} CD requirement for lithography nodes down to 25 nm. The cross-talking effect near the surface and inside the apertures of the pattern generator has been simulated in a 3-D ray-tracing code. New pattern generator design has been proposed to reduce the cross-talking effect. In order to eliminate the surface charging effect caused by the secondary electrons, a new beam-switching scheme in which the switching electrodes are immersed in the plasma has been demonstrated on a mechanically fabricated pattern generator.

  6. CMA Operating Manual: Canon Mask Aligner Introduction

    E-Print Network [OSTI]

    Yoo, S. J. Ben

    CMA Operating Manual: Canon Mask Aligner Introduction Use the Canon PLA-501F Mask Aligner (See Fig: Dan Haskell, 1125 Kemper Hall Corey Wolin, 1125 Kemper Hall Lab Manager Pre-operational Checklist Before you enter the cleanroom: 1. Have you arranged training from the superuser or lab manager

  7. Quantitative evaluation of mask phase defects from through-focus EUV aerial images

    SciTech Connect (OSTI)

    Mochi, Iacopo; Yamazoe, Kenji; Neureuther, Andrew; Goldberg, Kenneth A.

    2011-02-21T23:59:59.000Z

    Mask defects inspection and imaging is one of the most important issues for any pattern transfer lithography technology. This is especially true for EUV lithography where the wavelength-specific properties of masks and defects necessitate actinic inspection for a faithful prediction of defect printability and repair performance. In this paper we will present a technique to obtain a quantitative characterization of mask phase defects from EUV aerial images. We apply this technique to measure the aerial image phase of native defects on a blank mask, measured with the SEMATECH Berkeley Actinic Inspection Tool (AIT) an EUV zoneplate microscope that operates at Lawrence Berkeley National Laboratory. The measured phase is compared with predictions made from AFM top-surface measurements of those defects. While amplitude defects are usually easy to recognize and quantify with standard inspection techniques like scanning electron microscopy (SEM), defects or structures that have a phase component can be much more challenging to inspect. A phase defect can originate from the substrate or from any level of the multilayer. In both cases its effect on the reflected field is not directly related to the local topography of the mask surface, but depends on the deformation of the multilayer structure. Using the AIT, we have previously showed that EUV inspection provides a faithful and reliable way to predict the appearance of mask defect on the printed wafer; but to obtain a complete characterization of the defect we need to evaluate quantitatively its phase component. While aerial imaging doesn't provide a direct measurement of the phase of the object, this information is encoded in the through focus evolution of the image intensity distribution. Recently we developed a technique that allows us to extract the complex amplitude of EUV mask defects using two aerial images from different focal planes. The method for the phase reconstruction is derived from the Gerchberg-Saxton (GS) algorithm, an iterative method that can be used to reconstruct phase and amplitude of an object from the intensity distributions in the image and in the pupil plane. The GS algorithm is equivalent to a two-parameter optimization problem and it needs exactly two constraints to be solved, namely two intensity distributions in different focal planes. In some formulations, adding any other constraint would result in an ill posed problem. On the other hand, the solution's stability and convergence time can both be improved using more information. We modified our complex amplitude reconstruction algorithm to use an arbitrary number of through focus images and we compared its performance with the previous version in terms of convergence speed, robustness and accuracy. We have demonstrated the phase-reconstruction method on native, mask-blank phase defects and compared the results with phase-predictions made from AFM data collected before and after the multilayer deposition. The method and the current results could be extremely useful for improving the modeling and understanding of native phase defects, their detectability, and their printability.

  8. Controlled doping of graphene using ultraviolet irradiation

    SciTech Connect (OSTI)

    Luo Zhengtang [Department of Chemical and Biomolecular Engineering, Hong Kong University of Science and Technology, Clear Water Bay (Hong Kong); Pinto, Nicholas J.; Davila, Yarely [Department of Physics and Electronics, University of Puerto Rico at Humacao, Humacao, 00792 (Puerto Rico); Charlie Johnson, A. T. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6396 (United States)

    2012-06-18T23:59:59.000Z

    The electronic properties of graphene are tunable via doping, making it attractive in low dimensional organic electronics. Common methods of doping graphene, however, adversely affect charge mobility and degrade device performance. We demonstrate a facile shadow mask technique of defining electrodes on graphene grown by chemical vapor deposition (CVD) thereby eliminating the use of detrimental chemicals needed in the corresponding lithographic process. Further, we report on the controlled, effective, and reversible doping of graphene via ultraviolet (UV) irradiation with minimal impact on charge mobility. The change in charge concentration saturates at {approx}2 Multiplication-Sign 10{sup 12} cm{sup -2} and the quantum yield is {approx}10{sup -5} e/photon upon initial UV exposure. This simple and controlled strategy opens the possibility of doping wafer-size CVD graphene for diverse applications.

  9. Simplified models for mask roughness induced LER

    SciTech Connect (OSTI)

    McClinton, Brittany; Naulleau, Patrick

    2011-02-21T23:59:59.000Z

    The ITRS requires < 1.2nm line-edge roughness (LER) for the 22nm half-pitch node. Currently, we can consistently achieve only about 3nm LER. Further progress requires understanding the principle causes of LER. Much work has already been done on how both the resist and LER on the mask effect the final printed LER. What is poorly understood, however, is the extent to which system-level effects such as mask surface roughness, illumination conditions, and defocus couple to speckle at the image plane, and factor into LER limits. Presently, mask-roughness induced LER is studied via full 2D aerial image modeling and subsequent analysis of the resulting image. This method is time consuming and cumbersome. It is, therefore, the goal of this research to develop a useful 'rule-of-thumb' analytic model for mask roughness induced LER to expedite learning and understanding.

  10. Two-dimensional Photonic Crystals Fabricated by Nanoimprint Lithography

    E-Print Network [OSTI]

    Chen, A.

    We report on the process parameters of nanoimprint lithography (NIL) for the fabrication of two-dimensional (2-D) photonic crystals. The nickel mould with 2-D photonic crystal patterns covering the area up to 20mm² is ...

  11. Toward nano-accuracy in scanning beam interference lithography

    E-Print Network [OSTI]

    Montoya, Juan, 1976-

    2006-01-01T23:59:59.000Z

    Scanning beam interference lithography is a technique developed in our laboratory which uses interfering beams and a scanning stage to rapidly pattern gratings over large areas (300x300 mm2) with high precision. The ...

  12. Achieving sub-10-nm resolution using scanning electron beam lithography

    E-Print Network [OSTI]

    Cord, Bryan M. (Bryan Michael), 1980-

    2009-01-01T23:59:59.000Z

    Achieving the highest possible resolution using scanning-electron-beam lithography (SEBL) has become an increasingly urgent problem in recent years, as advances in various nanotechnology applications have driven demand for ...

  13. Hollow laser self-confined plasma for extreme ultraviolet lithography and other applications

    E-Print Network [OSTI]

    Harilal, S. S.

    that the EUV efficiency of the proposed hollow-beam LPP device to be higher than the current standard devices the microlithography progress. The litho- graphic process generates a semiconductor wafer partially covered

  14. Enhancing extreme ultraviolet photons emission in laser produced plasmas for advanced lithography

    E-Print Network [OSTI]

    Harilal, S. S.

    subjected to laser beam energy with different intensities and laser wavelength to dual-beam lasers, i of vapor expansion rate, which can be produced as a result of droplet heating by pre-pulse laser energy, and the remaining part of the laser heats the plasma instead of inter- acting with the target. For obtaining

  15. Imaging capabilities of resist in deep ultraviolet liquid immersion interferometric lithography

    E-Print Network [OSTI]

    New Mexico, University of

    of New Mexico, Albuquerque, New Mexico 87106 Will Conley Freescale Semiconductor Assignee known from oil-immersion optical microscopy. Through the use of immersion media, such as deionized water

  16. Ultraviolet stimulation of hydrogen peroxide production using...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ultraviolet stimulation of hydrogen peroxide production using aminoindazole, diaminopyridine, and phenylenediamine solid polymer Ultraviolet stimulation of hydrogen peroxide...

  17. Masking line foregrounds in intensity mapping surveys

    E-Print Network [OSTI]

    Breysse, Patrick C; Kamionkowski, Marc

    2015-01-01T23:59:59.000Z

    We address the problem of line confusion in intensity mapping surveys and explore the possibility to mitigate line foreground contamination by progressively masking the brightest pixels in the observed map. We consider experiments targeting CO(1-0) at $z=3$, Ly$\\alpha$ at $z=7$, and CII at $z=7$, and use simulated intensity maps, which include both clustering and shot noise components of the signal and possible foregrounds, in order to test the efficiency of our method. We find that for CO and Ly$\\alpha$ it is quite possible to remove most of the foreground contribution from the maps via only 1%-3% pixel masking. The CII maps will be more difficult to clean, however, due to instrumental constraints and the high-intensity foreground contamination involved. While the masking procedure sacrifices much of the astrophysical information present in our maps, we demonstrate that useful cosmological information in the targeted lines can be successfully retrieved.

  18. Protective mask for airborne toxic substances

    SciTech Connect (OSTI)

    Shoemaker, C.J.; Scavnicky, J.A.; Little, M.E.; Hagy, E.M.; Bloom, A.

    1983-10-21T23:59:59.000Z

    A protective mask is described which includes a one-piece face piece molded of a transparent elastomer. A visor in the face piece provides panoramic visibility and is resilient enough to deform under applied force to permit improved use of optical devices. Identical left and right cheek fittings permit installation of a canister on either side so that the same mask can be used by right-handed and left-handed wearers voice for use with a telephone and the like. Air deflectors inside the mask adjacent the left and right cheek fittings deflect de-foging air along the inside surface of the visor when either left or right or both cheek fittings are used for attachment of a canister. A sealing adapter permits sealing around earpiece shafts of eyeglasses.

  19. Free electron laser with masked chicane

    DOE Patents [OSTI]

    Nguyen, Dinh C. (Los Alamos, NM); Carlsten, Bruce E. (Los Alamos, NM)

    1999-01-01T23:59:59.000Z

    A free electron laser (FEL) is provided with an accelerator for outputting electron beam pulses; a buncher for modulating each one of the electron beam pulses to form each pulse into longitudinally dispersed bunches of electrons; and a wiggler for generating coherent light from the longitudinally dispersed bunches of electrons. The electron beam buncher is a chicane having a mask for physically modulating the electron beam pulses to form a series of electron beam bunches for input to the wiggler. In a preferred embodiment, the mask is located in the chicane at a position where each electron beam pulse has a maximum dispersion.

  20. Spatiotemporal discrimination model predicts temporal masking functions

    E-Print Network [OSTI]

    CA 94035 a b Institute for Optical Research, Stockholm, Sweden W ABSTRACT e present a simplified dual, and masking based on local spatio­temporal contrast energy. The contras ensitivity filter parameters for the lack of space­time l s separability in contrast detection, the model has separate sustained

  1. Automated mask creation from a 3D model using Faethm.

    SciTech Connect (OSTI)

    Schiek, Richard Louis; Schmidt, Rodney Cannon

    2007-11-01T23:59:59.000Z

    We have developed and implemented a method which given a three-dimensional object can infer from topology the two-dimensional masks needed to produce that object with surface micro-machining. The masks produced by this design tool can be generic, process independent masks, or if given process constraints, specific for a target process. This design tool calculates the two-dimensional mask set required to produce a given three-dimensional model by investigating the vertical topology of the model.

  2. High resolution imaging and lithography using interference of light and surface plasmon waves

    E-Print Network [OSTI]

    Kim, Yang-Hyo

    2007-01-01T23:59:59.000Z

    The resolution of optical imaging and lithography is limited by the wave nature of light. Studies have been undertaken to overcome the diffraction limit for imaging and lithography. In our lab, the standing wave surface ...

  3. Design and prototype : a manufacturing system for the soft lithography technique

    E-Print Network [OSTI]

    Cao, Arthur Y. (Arthur Yao)

    2006-01-01T23:59:59.000Z

    Ever since 1998 when the term "soft lithography" was first created, soft lithography techniques have drawn close attention of the academia and the industry. Micro contact printing is by far the most widely used soft ...

  4. Pattern-placement-error detection for spatial-phase-locked e-beam lithography (SPLEBL)

    E-Print Network [OSTI]

    Caramana, Cynthia L. (Cynthia Louise), 1978-

    2004-01-01T23:59:59.000Z

    Spatial-phase-locked electron-beam lithography (SPLEBL) is a new paradigm for scanning electron-beam lithography (SEBL) that permits nanometer-level pattern placement accuracy. Unlike conventional SEBL systems which run ...

  5. Mask-to-wafer alignment system

    DOE Patents [OSTI]

    Sweatt, William C.; Tichenor, Daniel A.; Haney, Steven J.

    2003-11-04T23:59:59.000Z

    A modified beam splitter that has a hole pattern that is symmetric in one axis and anti-symmetric in the other can be employed in a mask-to-wafer alignment device. The device is particularly suited for rough alignment using visible light. The modified beam splitter transmits and reflects light from a source of electromagnetic radiation and it includes a substrate that has a first surface facing the source of electromagnetic radiation and second surface that is reflective of said electromagnetic radiation. The substrate defines a hole pattern about a central line of the substrate. In operation, an input beam from a camera is directed toward the modified beam splitter and the light from the camera that passes through the holes illuminates the reticle on the wafer. The light beam from the camera also projects an image of a corresponding reticle pattern that is formed on the mask surface of the that is positioned downstream from the camera. Alignment can be accomplished by detecting the radiation that is reflected from the second surface of the modified beam splitter since the reflected radiation contains both the image of the pattern from the mask and a corresponding pattern on the wafer.

  6. Ultraviolet | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron Spin TransitionProgram |FrankUltrafastHydrogen andPortalUltraviolet

  7. Arrays of nanoscale magnetic dots: Fabrication by x-ray interference lithography and characterization

    SciTech Connect (OSTI)

    Heyderman, L.J.; Solak, H.H.; David, C.; Atkinson, D.; Cowburn, R.P.; Nolting, F. [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Nanomagnetism Group, Department of Physics, University of Durham, Rochester Building, Science Laboratories, South Road, Durham DH1 3LE (United Kingdom); Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland)

    2004-11-22T23:59:59.000Z

    X-ray interference lithography (XIL) was employed in combination with electrodeposition to fabricate arrays of nanoscale nickel dots which are uniform over 40 {mu}m and have periods down to 71 nm. Using extreme-ultraviolet light, XIL has the potential to produce magnetic dot arrays over large areas with periods well below 50 nm, and down to a theoretical limit of 6.5 nm for a 13 nm x-ray wavelength. In the nickel dot arrays, we observed the effect of interdot magnetic stray field interactions. Measuring the hysteresis loops using the magneto-optical Kerr effect, a double switching via the vortex state was observed in the nickel dots with diameters down to 44 nm and large dot separations. As the dot separations are reduced to below around 50 nm a single switching, occurring by collective rotation of the magnetic spins, is favored due to interdot magnetic stray field interactions. This results in magnetic flux closure through several dots which could be visualized with micromagnetic simulations. Further evidence of the stray field interactions was seen in photoemission electron microscopy images, where bands of contrast corresponding to chains of coupled dots were observed.

  8. Removable pellicle for lithographic mask protection and handling

    DOE Patents [OSTI]

    Klebanoff, Leonard E. (Dublin, CA); Rader, Daniel J. (Albuquerque, NM); Hector, Scott D. (Oakland, CA); Nguyen, Khanh B. (Sunnyvale, CA); Stulen, Richard H. (Livermore, CA)

    2002-01-01T23:59:59.000Z

    A removable pellicle for a lithographic mask that provides active and robust particle protection, and which utilizes a traditional pellicle and two deployments of thermophoretic protection to keep particles off the mask. The removable pellicle is removably attached via a retaining structure to the mask substrate by magnetic attraction with either contacting or non-contacting magnetic capture mechanisms. The pellicle retaining structural is composed of an anchor piece secured to the mask substrate and a frame member containing a pellicle. The anchor piece and the frame member are in removable contact or non-contact by the magnetic capture or latching mechanism. In one embodiment, the frame member is retained in a floating (non-contact) relation to the anchor piece by magnetic levitation. The frame member and the anchor piece are provided with thermophoretic fins which are interdigitated to prevent particles from reaching the patterned area of the mask. Also, the anchor piece and mask are maintained at a higher temperature than the frame member and pellicle which also prevents particles from reaching the patterned mask area by thermophoresis. The pellicle can be positioned over the mask to provide particle protection during mask handling, inspection, and pumpdown, but which can be removed manually or robotically for lithographic use of the mask.

  9. Condenser for extreme-UV lithography with discharge source

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Kubiak, Glenn D. (Livermore, CA)

    2001-01-01T23:59:59.000Z

    Condenser system, for use with a ringfield camera in projection lithography, employs quasi grazing-incidence collector mirrors that are coated with a suitable reflective metal such as ruthenium to collect radiation from a discharge source to minimize the effect of contaminant accumulation on the collecting mirrors.

  10. Ultratech Develops an Improved Lithography Tool for LED Wafer Manufacturing

    Broader source: Energy.gov [DOE]

    Ultratech modified an existing lithography tool used for semiconductor manufacturing to better meet the cost and performance targets of the high-brightness LED manufacturing industry. The goal was to make the equipment compatible with the wide range of substrate diameters and thicknesses prevalent in the industry while reducing the capital cost and the overall cost of ownership (COO).

  11. Digital microfluidics using soft lithography{ John Paul Urbanski,a

    E-Print Network [OSTI]

    Amarasinghe, Saman

    Digital microfluidics using soft lithography{ John Paul Urbanski,a William Thies,b Christopher published as an Advance Article on the web 29th November 2005 DOI: 10.1039/b510127a Although microfluidic software to drive the pumps, valves, and electrodes used to manipulate fluids in microfluidic devices

  12. Method and apparatus for inspecting an EUV mask blank

    DOE Patents [OSTI]

    Goldberg, Kenneth A.

    2005-11-08T23:59:59.000Z

    An apparatus and method for at-wavelength EUV mask-blank characterization for inspection of moderate and low spatial frequency coating uniformity using a synchrotron or other source of EUV light. The apparatus provides for rapid, non-destruction, non-contact, at-wavelength qualification of large mask areas, and can be self-calibrating or be calibrated to well-characterized reference samples. It can further check for spatial variation of mask reflectivity or for global differences among masks. The apparatus and method is particularly suited for inspection of coating uniformity and quality and can detect defects in the order of 50 .mu.m and above.

  13. Solving Maximum-Entropy Sampling Problems Using Factored Masks

    E-Print Network [OSTI]

    Samuel Burer

    2005-03-02T23:59:59.000Z

    Mar 2, 2005 ... Abstract: We present a practical approach to Anstreicher and Lee's masked spectral bound for maximum-entropy sampling, and we describe ...

  14. A masked spectral bound for maximum-entropy sampling

    E-Print Network [OSTI]

    Kurt Anstreicher

    2003-09-16T23:59:59.000Z

    Sep 16, 2003 ... Abstract: We introduce a new masked spectral bound for the maximum-entropy sampling problem. This bound is a continuous generalization of ...

  15. A laser triggered vacuum spark x-ray lithography source 

    E-Print Network [OSTI]

    Keating, Richard Allen

    1987-01-01T23:59:59.000Z

    was 50 cm. Obviously, this type of configurat, ion is totally impractical for a step and repeat system. Synchrotron radiation is being considered as an x-ray lithography source. Many laboratories are experi- menting with synchrotron sources. Also... for production of submicron geometries and improvements needed is presented. 1v ACKNOWLEDGMENT This thesis was made possible through the assistance of a number of people. Huang Wei Ling helped gather much of the data presented in this thesis. She also...

  16. Low Cost Lithography Tool for High Brightness LED Manufacturing

    SciTech Connect (OSTI)

    Andrew Hawryluk; Emily True

    2012-06-30T23:59:59.000Z

    The objective of this activity was to address the need for improved manufacturing tools for LEDs. Improvements include lower cost (both capital equipment cost reductions and cost-ofownership reductions), better automation and better yields. To meet the DOE objective of $1- 2/kilolumen, it will be necessary to develop these highly automated manufacturing tools. Lithography is used extensively in the fabrication of high-brightness LEDs, but the tools used to date are not scalable to high-volume manufacturing. This activity addressed the LED lithography process. During R&D and low volume manufacturing, most LED companies use contact-printers. However, several industries have shown that these printers are incompatible with high volume manufacturing and the LED industry needs to evolve to projection steppers. The need for projection lithography tools for LED manufacturing is identified in the Solid State Lighting Manufacturing Roadmap Draft, June 2009. The Roadmap states that Projection tools are needed by 2011. This work will modify a stepper, originally designed for semiconductor manufacturing, for use in LED manufacturing. This work addresses improvements to yield, material handling, automation and throughput for LED manufacturing while reducing the capital equipment cost.

  17. Superconducting x-ray lithography source Phase 1 (XLS) safety analysis report

    SciTech Connect (OSTI)

    Blumberg, L. (ed.)

    1990-07-01T23:59:59.000Z

    This paper discusses safety aspects associated with the superconducting x-ray lithography source. The policy, building systems safety and storage ring systems safety are specifically addressed. (LSP)

  18. Low thermal distortion extreme-UV lithography reticle

    DOE Patents [OSTI]

    Gianoulakis, Steven E. (Albuquerque, NM); Ray-Chaudhuri, Avijit K. (Livermore, CA)

    2001-01-01T23:59:59.000Z

    Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

  19. Low thermal distortion extreme-UV lithography reticle

    DOE Patents [OSTI]

    Gianoulakis, Steven E. (Albuquerque, NM); Ray-Chaudhuri, Avijit K. (Livermore, CA)

    2002-01-01T23:59:59.000Z

    Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

  20. Low thermal distortion Extreme-UV lithography reticle and method

    DOE Patents [OSTI]

    Gianoulakis, Steven E. (Albuquerque, NM); Ray-Chaudhuri, Avijit K. (Livermore, CA)

    2002-01-01T23:59:59.000Z

    Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

  1. Chains of quantum dot molecules grown on Si surface pre-patterned by ion-assisted nanoimprint lithography

    SciTech Connect (OSTI)

    Smagina, Zh. V.; Stepina, N. P., E-mail: stepina@isp.nsc.ru; Zinovyev, V. A.; Kuchinskaya, P. A. [Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Lavrenteva 13, 630090 Novosibirsk (Russian Federation); Novikov, P. L.; Dvurechenskii, A. V. [Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Lavrenteva 13, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, Pirogova, 2, 630090 Novosibirsk (Russian Federation)

    2014-10-13T23:59:59.000Z

    An original approach based on the combination of nanoimprint lithography and ion irradiation through mask has been developed for fabrication of large-area periodical pattern on Si(100). Using the selective etching of regions amorphized by ion irradiation ordered structures with grooves and ridges were obtained. The shape and depth of the relief were governed by ion energy and by the number of etching stages as well. Laterally ordered chains of Ge quantum dots were fabricated by molecular beam epitaxy of Ge on the pre-patterned Si substrates. For small amount of Ge deposited chains contain separate quantum dot molecules. The increase of deposition amount leads to overlapping of quantum dot molecules with formation of dense homogeneous chains of quantum dots. It was shown that the residual irradiation-induced bulk defects underneath the grooves suppress nucleation of Ge islands at the bottom of grooves. On pre-patterned substrates with whole defect regions, etched quantum dots grow at the bottom of grooves. The observed location of Ge quantum dots is interpreted in terms of local strain-mediated surface chemical potential which controls the sites of islands nucleation. The local chemical potential is affected by additional strain formed by the residual defects. It was shown by molecular dynamics calculations that these defects form the compressive strain at the bottom of grooves.

  2. Electrodeposition of nickel oxyhydroxide films through polymer masks

    SciTech Connect (OSTI)

    Yang, M.C.; Lin, C.K.; Su, C.L. [National Cheng Kung Univ., Tainan (Taiwan, Province of China). Dept. of Chemical Engineering

    1995-04-01T23:59:59.000Z

    Electrochromic materials have attracted much attention for devices including ``smart windows`` and displays. Nickel oxyhydroxide films were electrodeposited through gelatin masks, whose thicknesses may control the optical transmittances of the deposited electrochromic films. The difference of transmittance, {Delta}T{sub 540}, between bleaching and coloration states at wavelength of 540 nm has a linear relationship with the gelatin mask thickness. {Delta}T{sub 540} increased if nickel oxyhydroxide was prepared in agitated electrolyte. The electrodeposited films, prepared with gelatin masks, may have higher stability. These results showed the feasibility of fabricating an electrochromic device with a controlled image whose contrast and brightness are adjustable with potential or current.

  3. Ultraviolet-radiation-curable paints

    SciTech Connect (OSTI)

    Grosset, A M; Su, W F.A.; Vanderglas, E

    1981-09-30T23:59:59.000Z

    In product finishing lines, ultraviolet radiation curing of paints on prefabricated structures could be more energy efficient than curing by natural gas fired ovens, and could eliminate solvent emission. Diffuse ultraviolet light can cure paints on three dimensional metal parts. In the uv curing process, the spectral output of radiation sources must complement the absorption spectra of pigments and photoactive agents. Photosensitive compounds, such as thioxanthones, can photoinitiate unsaturated resins, such as acrylated polyurethanes, by a free radical mechanism. Newly developed cationic photoinitiators, such as sulfonium or iodonium salts (the so-called onium salts) of complex metal halide anions, can be used in polymerization of epoxy paints by ultraviolet light radiation. One-coat enamels, topcoats, and primers have been developed which can be photoinitiated to produce hard, adherent films. This process has been tested in a laboratory scale unit by spray coating these materials on three-dimensional objects and passing them through a tunnel containing uv lamps.

  4. Computer-Aided Design for Microfluidic Chips Based on Multilayer Soft Lithography

    E-Print Network [OSTI]

    Rajamani, Sriram K.

    Computer-Aided Design for Microfluidic Chips Based on Multilayer Soft Lithography Nada Amin1 Abstract-- Microfluidic chips are emerging as a powerful platform for automating biology experiments automation techniques for microfluidic chips based on multilayer soft lithography. We focus our attention

  5. UV-LED LITHOGRAPHY FOR 3-D HIGH ASPECT RATIO MICROSTRUCTURE PATTERNING

    E-Print Network [OSTI]

    in microfabrication. Table 1 compares the performance of UV-LEDs with a mercury lamp for several key parametersUV-LED LITHOGRAPHY FOR 3-D HIGH ASPECT RATIO MICROSTRUCTURE PATTERNING Jungkwun `JK' Kim*, Seung of Technology, Atlanta, GA, USA ABSTRACT This paper presents a UV lithography method that utilizes a UV-LED

  6. A microfluidic microbial fuel cell fabricated by soft lithography Fang Qian a,b,

    E-Print Network [OSTI]

    A microfluidic microbial fuel cell fabricated by soft lithography Fang Qian a,b, , Zhen He c microfluidic microbial fuel cell (MFC) platform built by soft-lithography tech- niques. The MFC design includes a unique sub-5 lL polydimethylsiloxane soft chamber featuring carbon cloth electrodes and microfluidic

  7. header for SPIE use Fluoropolymers for 157nm Lithography: Optical Properties from VUV

    E-Print Network [OSTI]

    Rollins, Andrew M.

    new radiation damage mechanisms in previously accepted optical materials. For 157 nm pellicles, newheader for SPIE use Fluoropolymers for 157nm Lithography: Optical Properties from VUV Absorbance With the introduction of 157 nm as the next optical lithography wavelength, the need for new pellicle and photoresist

  8. Mask-assisted seeded growth of segmented metallic heteronanostructures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Crane, Cameron C.; Tao, Jing; Wang, Feng; Zhu, Yimei; Chen, Jingyi

    2014-12-04T23:59:59.000Z

    Controlling the deposition of exotic metals in the seeded growth of multi-metal nanostructures is challenging. This work describes a seeded growth method assisted by a mask for synthesis of segmented binary or ternary metal nanostructures. Silica is used as a mask to partially block the surface of a seed and a second metal is subsequently deposited on the exposed area, forming a bimetallic heterodimer. The initial demonstration was carried out on a Au seed, followed by deposition of Pd or Pt on the seed. It was found that Pd tends to spread out laterally on the seed while Pt inclinesmore »to grow vertically into branched topology on Au. Without removal of the SiO? mask, Pt could be further deposited on the unblocked Pd of the Pd-Au dimer to form a Pt-Pd-Au trimer. The mask-assisted seeded growth provides a general strategy to construct segmented metallic nanoarchitectures.« less

  9. SIGNAL MASKING IN GAUSSIAN CHANNELS John A. Quinn

    E-Print Network [OSTI]

    Edinburgh, University of

    and masking noise pollution. We present results as to how this can be done efficiently, assuming that we have. We also discuss the ap- plication of the theory to acoustic signals, where we consider aspects

  10. Mask-assisted seeded growth of segmented metallic heteronanostructures

    SciTech Connect (OSTI)

    Crane, Cameron C. [Univ. of Arkansas, Fayetteville, AR (United States); Tao, Jing [Brookhaven National Lab. (BNL), Upton, NY (United States); Wang, Feng [Univ. of Arkansas, Fayetteville, AR (United States); Zhu, Yimei [Brookhaven National Lab. (BNL), Upton, NY (United States); Chen, Jingyi [Univ. of Arkansas, Fayetteville, AR (United States)

    2014-12-04T23:59:59.000Z

    Controlling the deposition of exotic metals in the seeded growth of multi-metal nanostructures is challenging. This work describes a seeded growth method assisted by a mask for synthesis of segmented binary or ternary metal nanostructures. Silica is used as a mask to partially block the surface of a seed and a second metal is subsequently deposited on the exposed area, forming a bimetallic heterodimer. The initial demonstration was carried out on a Au seed, followed by deposition of Pd or Pt on the seed. It was found that Pd tends to spread out laterally on the seed while Pt inclines to grow vertically into branched topology on Au. Without removal of the SiO? mask, Pt could be further deposited on the unblocked Pd of the Pd-Au dimer to form a Pt-Pd-Au trimer. The mask-assisted seeded growth provides a general strategy to construct segmented metallic nanoarchitectures.

  11. A laser triggered vacuum spark x-ray lithography source

    E-Print Network [OSTI]

    Keating, Richard Allen

    1987-01-01T23:59:59.000Z

    ionized state or the physical processes occurring 15 in a high temperature plasma. There are many advantages to the use of the vacuum spark as an x-ray source; the simplicity of the machine is one. The x-ray output is within the range usable for x-ray... spark apparatus ha- been studied here to determine its applicability to x-ray lithography. A capacitor which stored approximately 3 KJ supplied most of the energy for the plasma. A Nd-YAG laser was used to supply electrons and metallic atoms...

  12. Bubble masks for time-encoded imaging of fast neutrons.

    SciTech Connect (OSTI)

    Brubaker, Erik; Brennan, James S.; Marleau, Peter; Nowack, Aaron B.; Steele, John; Sweany, Melinda; Throckmorton, Daniel J.

    2013-09-01T23:59:59.000Z

    Time-encoded imaging is an approach to directional radiation detection that is being developed at SNL with a focus on fast neutron directional detection. In this technique, a time modulation of a detected neutron signal is induced-typically, a moving mask that attenuates neutrons with a time structure that depends on the source position. An important challenge in time-encoded imaging is to develop high-resolution two-dimensional imaging capabilities; building a mechanically moving high-resolution mask presents challenges both theoretical and technical. We have investigated an alternative to mechanical masks that replaces the solid mask with a liquid such as mineral oil. Instead of fixed blocks of solid material that move in pre-defined patterns, the oil is contained in tubing structures, and carefully introduced air gaps-bubbles-propagate through the tubing, generating moving patterns of oil mask elements and air apertures. Compared to current moving-mask techniques, the bubble mask is simple, since mechanical motion is replaced by gravity-driven bubble propagation; it is flexible, since arbitrary bubble patterns can be generated by a software-controlled valve actuator; and it is potentially high performance, since the tubing and bubble size can be tuned for high-resolution imaging requirements. We have built and tested various single-tube mask elements, and will present results on bubble introduction and propagation as a function of tubing size and cross-sectional shape; real-time bubble position tracking; neutron source imaging tests; and reconstruction techniques demonstrated on simple test data as well as a simulated full detector system.

  13. Tabletop Nanometer Extreme Ultraviolet Imaging in an Extended Reflection Mode using Coherent Fresnel Ptychography

    E-Print Network [OSTI]

    Seaberg, Matthew D; Gardner, Dennis F; Shanblatt, Elisabeth R; Murnane, Margaret M; Kapteyn, Henry C; Adams, Daniel E

    2013-01-01T23:59:59.000Z

    We demonstrate high resolution extreme ultraviolet (EUV) coherent diffractive imaging in the most general reflection geometry by combining ptychography with tilted plane correction. This method makes it possible to image extended surfaces at any angle of incidence. Refocused light from a tabletop coherent high harmonic light source at 29 nm illuminates a nanopatterned surface at 45 degree angle of incidence. The reconstructed image contains quantitative amplitude and phase (in this case pattern height) information, comparing favorably with both scanning electron microscope and atomic force microscopy images. In the future, this approach will enable imaging of complex surfaces and nanostructures with sub-10 nm-spatial resolution and fs-temporal resolution, which will impact a broad range of nanoscience and nanotechnology including for direct application in actinic inspection in support of EUV lithography.

  14. Time exposure performance of Mo-Au Gibbsian segregating alloys for extreme ultraviolet collector optics

    SciTech Connect (OSTI)

    Qiu Huatan; Srivastava, Shailendra N.; Thompson, Keith C.; Neumann, Martin J.; Ruzic, David N

    2008-05-01T23:59:59.000Z

    Successful implementation of extreme ultraviolet (EUV) lithography depends on research and progress toward minimizing collector optics degradation from intense plasma erosion and debris deposition. Thus studying the surface degradation process and implementing innovative methods, which could enhance the surface chemistry causing the mirrors to suffer less damage, is crucial for this technology development. A Mo-Au Gibbsian segregation (GS) alloy is deposited on Si using a dc dual-magnetron cosputtering system and the damage is investigated as a result of time dependent exposure in an EUV source. A thin Au segregating layer is maintained through segregation during exposure, even though overall erosion in the Mo-Au sample is taking place in the bulk. The reflective material, Mo, underneath the segregating layer is protected by this sacrificial layer, which is lost due to preferential sputtering. In addition to theoretical work, experimental results are presented on the effectiveness of the GS alloys to be used as potential EUV collector optics material.

  15. Organization of Block Copolymers using NanoImprint Lithography: Comparison of Theory and Experiments

    E-Print Network [OSTI]

    Xingkun Man; Daivd Andelman; Henri Orland; Pascal Thebault; Pang-Hung Liu; Patrick Guenoun; Jean Daillant; Stefan Landis

    2011-01-26T23:59:59.000Z

    We present NanoImprint lithography experiments and modeling of thin films of block copolymers (BCP). The NanoImprint lithography is used to align perpendicularly lamellar phases, over distances much larger than the natural lamellar periodicity. The modeling relies on self-consistent field calculations done in two- and three-dimensions. We get a good agreement with the NanoImprint lithography setups. We find that, at thermodynamical equilibrium, the ordered BCP lamellae are much better aligned than when the films are deposited on uniform planar surfaces.

  16. Ultraviolet imaging of hydrogen flames

    SciTech Connect (OSTI)

    Yates, G.J.; Wilke, M.; King, N.

    1988-01-01T23:59:59.000Z

    We have assembled an ultraviolet-sensitive intensified camera for observing hydrogen combustion by imaging the OH, A/sup 2/..sigma.. - X/sup 2//Pi/ bandhead emissions near 309 nm. The camera consists of a quartz and CaF achromat lense-coupled to an ultraviolet image intensifier which is in turn fiber-coupled to a focus projection scan (FPS) vidicon. The emission band is selected with interference filters which serve to discriminate against background. The camera provides optical gain of 100 to 1000 and is capable of being shuttered at nanosecond speeds and of being framed at over 600 frames per second. We present data from observations of test flames in air at standard RS-170 video rates with varying background conditions. Enhanced images using background subtraction are presented. Finally, we discuss the use of polarizaton effects to further discrimination against sky background. This work began as a feasibility study to investigate ultraviolet technology to detect hydrogen fires for the NASA space program. 6 refs., 7 figs, 2 tabs.

  17. Holographic illuminator for synchrotron-based projection lithography systems

    DOE Patents [OSTI]

    Naulleau, Patrick P.

    2005-08-09T23:59:59.000Z

    The effective coherence of a synchrotron beam line can be tailored to projection lithography requirements by employing a moving holographic diffuser and a stationary low-cost spherical mirror. The invention is particularly suited for use in an illuminator device for an optical image processing system requiring partially coherent illumination. The illuminator includes: (1) a synchrotron source of coherent or partially coherent radiation which has an intrinsic coherence that is higher than the desired coherence, (2) a holographic diffuser having a surface that receives incident radiation from said source, (3) means for translating the surface of the holographic diffuser in two dimensions along a plane that is parallel to the surface of the holographic diffuser wherein the rate of the motion is fast relative to integration time of said image processing system; and (4) a condenser optic that re-images the surface of the holographic diffuser to the entrance plane of said image processing system.

  18. An Eight-Octant Phase-Mask Coronagraph

    E-Print Network [OSTI]

    Murakami, N; Baba, N; Nishikawa, J; Tamura, M; Hashimoto, N; Abe, L

    2008-01-01T23:59:59.000Z

    We present numerical simulations and laboratory experiments on an eight-octant phase-mask (EOPM) coronagraph. The numerical simulations suggest that an achievable contrast for the EOPM coronagraph can be greatly improved as compared to that of a four-quadrant phase-mask (FQPM) coronagraph for a partially resolved star. On-sky transmission maps reveal that the EOPM coronagraph has relatively high optical throughput, a small inner working angle and large discovery space. We have manufactured an eight-segment phase mask utilizing a nematic liquid-crystal device, which can be easily switched between the FQPM and the EOPM modes. The laboratory experiments demonstrate that the EOPM coronagraph has a better tolerance of the tip-tilt error than the FQPM one. We also discuss feasibility of a fully achromatic and high-throughput EOPM coronagraph utilizing a polarization interferometric technique.

  19. An Eight-Octant Phase-Mask Coronagraph

    E-Print Network [OSTI]

    N. Murakami; R. Uemura; N. Baba; J. Nishikawa; M. Tamura; N. Hashimoto; L. Abe

    2008-09-09T23:59:59.000Z

    We present numerical simulations and laboratory experiments on an eight-octant phase-mask (EOPM) coronagraph. The numerical simulations suggest that an achievable contrast for the EOPM coronagraph can be greatly improved as compared to that of a four-quadrant phase-mask (FQPM) coronagraph for a partially resolved star. On-sky transmission maps reveal that the EOPM coronagraph has relatively high optical throughput, a small inner working angle and large discovery space. We have manufactured an eight-segment phase mask utilizing a nematic liquid-crystal device, which can be easily switched between the FQPM and the EOPM modes. The laboratory experiments demonstrate that the EOPM coronagraph has a better tolerance of the tip-tilt error than the FQPM one. We also discuss feasibility of a fully achromatic and high-throughput EOPM coronagraph utilizing a polarization interferometric technique.

  20. BAYESIAN INSIGHTS ON DISCLOSURE LIMITATION: MASK OR IMPUTE?

    SciTech Connect (OSTI)

    S. KELLER-MCNULTY; G. DUNCAN

    2000-10-01T23:59:59.000Z

    Statistical agencies seek to disseminate useful data while keeping low the risk of statistical confidentiality disclosure. Recognizing that reidentification of data is generally inadequate to protect its confidentiality against attack by a data snooper, agencies restrict the data they release for general use. Typically, these restricted data procedures have involved transformation or masking of the original, collected data through such devices as adding noise, topcoding, data swapping, and recoding. Recently, proposals have been put forth for the release of synthetic data, simulated from models constructed from the original data. This paper gives a framework for the comparison of masking and synthetic data as two approaches to disclosure limitation. Particular attention is paid to data utility and disclosure risk. Examples of instantiation of masking and of synthetic data construction are provided to illustrate the concepts. Particular attention is paid to data swapping. Insights drawn from the Bayesian paxadigm are provided.

  1. System for generating two-dimensional masks from a three-dimensional model using topological analysis

    DOE Patents [OSTI]

    Schiek, Richard (Albuquerque, NM)

    2006-06-20T23:59:59.000Z

    A method of generating two-dimensional masks from a three-dimensional model comprises providing a three-dimensional model representing a micro-electro-mechanical structure for manufacture and a description of process mask requirements, reducing the three-dimensional model to a topological description of unique cross sections, and selecting candidate masks from the unique cross sections and the cross section topology. The method further can comprise reconciling the candidate masks based on the process mask requirements description to produce two-dimensional process masks.

  2. Development of a microfluidic device for patterning multiple species by scanning probe lithography

    E-Print Network [OSTI]

    Rivas Cardona, Juan Alberto

    2009-06-02T23:59:59.000Z

    Scanning Probe Lithography (SPL) is a versatile nanofabrication platform that leverages microfluidic “ink” delivery systems with Scanning Probe Microscopy (SPM) for generating surface-patterned chemical functionality on the sub-100 nm length scale...

  3. Sub-10-nm electron-beam lithography for templated placement of colloidal quantum dots

    E-Print Network [OSTI]

    Manfrinato, Vitor Riseti

    2011-01-01T23:59:59.000Z

    This thesis presents the investigation of resolution limits of electron-beam lithography (EBL) at the sub-10-nm scale. EBL patterning was investigated at low electron energy (2 keV) in a converted scanning electron microscope ...

  4. Real-time spatial-phase-locked electron-beam lithography

    E-Print Network [OSTI]

    Zhang, Feng, 1973-

    2005-01-01T23:59:59.000Z

    The ability of electron-beam lithography (EBL) to create sub-10-nm features with arbitrary geometry makes it a critical tool in many important applications in nanoscale science and technology. The conventional EBL system ...

  5. The development of a prototype Zone-Plate-Array Lithography (ZPAL) system

    E-Print Network [OSTI]

    Patel, Amil Ashok, 1979-

    2004-01-01T23:59:59.000Z

    The research presented in this paper aims to build a Zone-Plate-Array Lithography (ZPAL) prototype tool that will demonstrate the high-resolution, parallel patterning capabilities of the architecture. The experiment will ...

  6. Contact region fidelity, sensitivity, and control in roll-based soft lithography

    E-Print Network [OSTI]

    Petrzelka, Joseph E

    2012-01-01T23:59:59.000Z

    Soft lithography is a printing process that uses small features on an elastomeric stamp to transfer micron and sub-micron patterns to a substrate. Translating this lab scale process to a roll-based manufacturing platform ...

  7. Resolution Limits of Electron-Beam Lithography toward the Atomic Scale

    E-Print Network [OSTI]

    Zhang, Lihua

    We investigated electron-beam lithography with an aberration-corrected scanning transmission electron microscope. We achieved 2 nm isolated feature size and 5 nm half-pitch in hydrogen silsesquioxane resist. We also analyzed ...

  8. Fabrication of ZnO photonic crystals by nanosphere lithography using inductively coupled-plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the ZnO/GaN heterojunction light emitting diodes

    SciTech Connect (OSTI)

    Chen, Shr-Jia; Chang, Chun-Ming; Kao, Jiann-Shiun; Chen, Fu-Rong; Tsai, Chuen-Horng [Engineering and System Science, National Tsing Hua University, Hsinchu, 30013 Taiwan (China); Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu, 300 Taiwan (China); Engineering and System Science, National Tsing Hua University, Hsinchu, 30013 Taiwan (China)

    2010-07-15T23:59:59.000Z

    This article reports fabrication of n-ZnO photonic crystal/p-GaN light emitting diode (LED) by nanosphere lithography to further booster the light efficiency. In this article, the fabrication of ZnO photonic crystals is carried out by nanosphere lithography using inductively coupled plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the n-ZnO/p-GaN heterojunction LEDs. The CH{sub 4}/H{sub 2}/Ar mixed gas gives high etching rate of n-ZnO film, which yields a better surface morphology and results less plasma-induced damages of the n-ZnO film. Optimal ZnO lattice parameters of 200 nm and air fill factor from 0.35 to 0.65 were obtained from fitting the spectrum of n-ZnO/p-GaN LED using a MATLAB code. In this article, we will show our recent result that a ZnO photonic crystal cylinder has been fabricated using polystyrene nanosphere mask with lattice parameter of 200 nm and radius of hole around 70 nm. Surface morphology of ZnO photonic crystal was examined by scanning electron microscope.

  9. Ultraviolet divergences and supersymmetric theories

    SciTech Connect (OSTI)

    Sagnotti, A.

    1984-09-01T23:59:59.000Z

    This article is closely related to the one by Ferrara in these same Proceedings. It deals with what is perhaps the most fascinating property of supersymmetric theories, their improved ultraviolet behavior. My aim here is to present a survey of the state of the art as of August, 1984, and a somewhat more detailed discussion of the breakdown of the superspace power-counting beyond N = 2 superfields. A method is also described for simplifying divergence calculations that uses the locality of subtracted Feynman integrals. 74 references.

  10. Microgap ultra-violet detector

    DOE Patents [OSTI]

    Wuest, C.R.; Bionta, R.M.

    1994-09-20T23:59:59.000Z

    A microgap ultra-violet detector of photons with wavelengths less than 400 run (4,000 Angstroms) which comprises an anode and a cathode separated by a gas-filled gap and having an electric field placed across the gap is disclosed. Either the anode or the cathode is semi-transparent to UV light. Upon a UV photon striking the cathode an electron is expelled and accelerated across the gap by the electric field causing interactions with other electrons to create an electron avalanche which contacts the anode. The electron avalanche is detected and converted to an output pulse. 2 figs.

  11. Ga lithography in sputtered niobium for superconductive micro and nanowires

    SciTech Connect (OSTI)

    Henry, M. David; Wolfley, Steve; Monson, Todd; Lewis, Rupert [Sandia National Labs, MESA Facility, P.O. Box 5800, Albuquerque, New Mexico 87185-1084 (United States)

    2014-08-18T23:59:59.000Z

    This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12?nm deep with a 14?nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10??m by 10??m and 100??m by 100??m, demonstrate that doses above than 7.5?×?10{sup 15?}cm{sup ?2} at 30?kV provide adequate mask protection for a 205?nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75?nm wide by 10??m long connected to 50??m wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T{sub c})?=?7.7?K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.

  12. Adaptive Streaming and Rendering of Large Terrains using Strip Masks

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Adaptive Streaming and Rendering of Large Terrains using Strip Masks Joachim Pouderoux Jean-Eudes Marvie IPARLA Project (LaBRI - INRIA Futurs) University of Bordeaux, France Abstract Terrain rendering is an important factor in the rendering of virtual scenes. If they are large and detailed, digital terrains can

  13. The rhetorical mask as an aid to composition

    E-Print Network [OSTI]

    Bovey, Shirley Ellen

    1972-01-01T23:59:59.000Z

    , it can be demonstrated that professional writers do use a rhetorical mask. A short essay from The Norton Reader, "Pop Angler, " will be used to illustrate this idea; the opening paragraphs are quoted in order to show that the persona is established...

  14. BAYESIAN RELIABILITY MODELING FOR MASKED SYSTEM LIFETIME DATA

    E-Print Network [OSTI]

    Kuo, Lynn

    supported by Korea Science and Engineering Foundation 971­0105­027­2. 1 #12; reliability of the components of Statistics, University of Connecticut, Storrs, CT 06269­3120, USA Tae Young YANG y Department of Mathematics consider various probability models for the conditional masking probabilities that identify the set

  15. Simultaneous Feature Extraction and Selection Using a Masking Genetic Algorithm

    E-Print Network [OSTI]

    1 Simultaneous Feature Extraction and Selection Using a Masking Genetic Algorithm Michael L. Raymer: identification of functional water molecules bound to protein surfaces, and diagnosis of thyroid deficiency of feature extraction ­ defining new features in terms of the original feature set to facilitate more

  16. Masking Property of Quantum Random Cipher with Phase Mask Encryption -Towards Quantum Enigma Cipher-

    E-Print Network [OSTI]

    Masaki Sohma; Osamu Hirota

    2014-04-18T23:59:59.000Z

    The security analysis of physical encryption protocol based on coherent pulse position modulation(CPPM) originated by Yuen is one of the most interesting topics in the study of cryptosystem with a security level beyond the Shannon limit. Although the implementation of CPPM scheme has certain difficulty, several methods have been proposed recently. This paper deals with the CPPM encryption in terms of symplectic transformation, which includes a phase mask encryption as a special example, and formulates a unified security analysis for such encryption schemes. Specifically, we give a lower bound of Eve's symbol error probability using reliability function theory to ensure that our proposed system exceeds the Shannon limit. Then we assume the secret key is given to Eve after her heterodyne measurement. Since this assumption means that Eve has a great advantage in the sense of the conventional cryptography, the lower bound of her error indeed ensures the security level beyond the Shannon limit. In addition, we show some numerical examples of the security performance.

  17. Analysis of Optics and Mask Contamination in SEMATECH EUV Micro-Exposure Tools

    E-Print Network [OSTI]

    Wuest, Andrea

    2008-01-01T23:59:59.000Z

    Analysis of Optics and Mask Contamination in SEMATECHMioro^Exposure Tools IEUVI Optics Contamination/Lifetime TWG

  18. A next-generation EUV Fresnel zoneplate mask-imaging microscope

    E-Print Network [OSTI]

    Goldberg, Kenneth A.

    2012-01-01T23:59:59.000Z

    A next-generation EUV Fresnel zoneplate mask-imaginghigh-magnification all-EUV Fresnel zoneplate microscope, the

  19. Disposable colorimetric carbon dioxide detector use as an indicator of a patent airway during noninvasive mask ventilation

    E-Print Network [OSTI]

    Leone, T A; Lange, A; Rich, W; Finer, N N

    2006-01-01T23:59:59.000Z

    During Noninvasive Mask Ventilation Tina A. Leone, Allisonduring bag and mask ventilation and en- courage others toposi- tive pressure ventilation in preterm babies ventilated

  20. Proceedings of NAMRI/SME, Vol. 39, 2011 Additive Manufacturing based on Optimized Mask Video

    E-Print Network [OSTI]

    Chen, Yong

    Proceedings of NAMRI/SME, Vol. 39, 2011 Additive Manufacturing based on Optimized Mask Video@usc.edu, (213) 740-7829 ABSTRACT Additive manufacturing (AM) processes based on mask image projection and resolution of built components. KEYWORDS Additive manufacturing, Solid freeform fabrication, Mask image

  1. ROBUST CONTENT-BASED VIDEO WATERMARKING EXPLOITING MOTION ENTROPY MASKING EFFECT

    E-Print Network [OSTI]

    Reif, Rafael

    ROBUST CONTENT-BASED VIDEO WATERMARKING EXPLOITING MOTION ENTROPY MASKING EFFECT Amir Houmansadr: Digital watermarking, Video sequence, Entropy masking. Abstract: A major class of image and video, a content-based video watermarking scheme is developed and the concept of entropy masking effect is employed

  2. Solar Dynamics Observatory/ Extreme Ultraviolet Variability Experiment

    E-Print Network [OSTI]

    Mojzsis, Stephen J.

    Solar Dynamics Observatory/ EVE Extreme Ultraviolet Variability Experiment Frequently Asked and model solar extreme ultraviolet irradiance variations due to solar flares, solar rotation, and solar and structure of the Sun. What is solar variability? Solar radiation varies on all time scales ranging from

  3. A Combined Vacuum Ultraviolet Laser and Synchrotron Pulsed Field...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vacuum Ultraviolet Laser and Synchrotron Pulsed Field Ionization Study of BCl. A Combined Vacuum Ultraviolet Laser and Synchrotron Pulsed Field Ionization Study of BCl. Abstract:...

  4. Fundamentals of embossing nanoimprint lithography in polymer substrates.

    SciTech Connect (OSTI)

    Simmons, Blake Alexander; King, William P. (University of Illinois, Urbana IL)

    2011-02-01T23:59:59.000Z

    The convergence of micro-/nano-electromechanical systems (MEMS/NEMS) and biomedical industries is creating a need for innovation and discovery around materials, particularly in miniaturized systems that use polymers as the primary substrate. Polymers are ubiquitous in the microelectronics industry and are used as sensing materials, lithography tools, replication molds, microfluidics, nanofluidics, and biomedical devices. This diverse set of operational requirements dictates that the materials employed must possess different properties in order to reduce the cost of production, decrease the scale of devices to the appropriate degree, and generate engineered devices with new functional properties at cost-competitive levels of production. Nanoscale control of polymer deformation at a massive scale would enable breakthroughs in all of the aforementioned applications, but is currently beyond the current capabilities of mass manufacturing. This project was focused on developing a fundamental understanding of how polymers behave under different loads and environments at the nanoscale in terms of performance and fidelity in order to fill the most critical gaps in our current knowledgebase on this topic.

  5. Virtually distortion-free imaging system for large field, high resolution lithography

    DOE Patents [OSTI]

    Hawryluk, A.M.; Ceglio, N.M.

    1993-01-05T23:59:59.000Z

    Virtually distortion free large field high resolution imaging is performed using an imaging system which contains large field distortion or field curvature. A reticle is imaged in one direction through the optical system to form an encoded mask. The encoded mask is then imaged back through the imaging system onto a wafer positioned at the reticle position.

  6. X-ray mask and method for making

    DOE Patents [OSTI]

    Morales, Alfredo M.

    2004-10-26T23:59:59.000Z

    The present invention describes a method for fabricating an x-ray mask tool which is a contact lithographic mask which can provide an x-ray exposure dose which is adjustable from point-to-point. The tool is useful in the preparation of LIGA plating molds made from PMMA, or similar materials. In particular the tool is useful for providing an ability to apply a graded, or "stepped" x-ray exposure dose across a photosensitive substrate. By controlling the x-ray radiation dose from point-to-point, it is possible to control the development process for removing exposed portions of the substrate; adjusting it such that each of these portions develops at a more or less uniformly rate regardless of feature size or feature density distribution.

  7. Jpn. J. Appl. Phys. Vol. 41 (2002) pp. 41014104 Part 1, No. 6B, June 2002

    E-Print Network [OSTI]

    Bokor, Jeffrey

    2002-01-01T23:59:59.000Z

    of Applied Physics "Actinic-only" Defects in Extreme Ultraviolet Lithography Mask Blanks --Native Defects, CA 94720, U.S.A. 2NTT Telecommunications Energy Laboratories, Atsugi, Kanagawa 243-0198, Japan 3 that native defects as small as 60 nm with only 3 nm height were detectable by the actinic tool. These defects

  8. UV-nanoimprint lithography and large area roll-to-roll texturization with hyperbranched polymer nanocomposites for light-trapping applications$

    E-Print Network [OSTI]

    UV-nanoimprint lithography and large area roll-to-roll texturization with hyperbranched polymer nanoimprint lithography Light-trapping Roll-to-roll Amorphous silicon a b s t r a c t Light-trapping textures were produced in hyperbranched polymer (HBP) silica nanocomposites using a UV-nanoimprint lithography

  9. Comparing Vacuum and Extreme Ultraviolet Radiation for Postionization of Laser Desorbed Neutrals from Bacterial Biofilms and Organic Fullerene

    E-Print Network [OSTI]

    Gaspera, Gerald L.

    2011-01-01T23:59:59.000Z

    Laboratory, USA Comparing Vacuum and Extreme Ultravioletradiation, extreme ultraviolet, vacuum ultravioletAbstract Vacuum and extreme ultraviolet radiation from 8 -

  10. Onsite Wastewater Treatment Systems: Ultraviolet Light Disinfection

    E-Print Network [OSTI]

    Lesikar, Bruce J.

    2008-10-02T23:59:59.000Z

    Some onsite wastewater treatment systems include a disinfection component. This publication explains how homeowners can disinfect wastewater with ultraviolet light, what the components of such a system are, what factors affect the performance of a...

  11. The Local Interstellar Ultraviolet Radiation Field

    E-Print Network [OSTI]

    Richard Conn Henry

    2002-01-03T23:59:59.000Z

    I have used the Hipparcos Input Catalog, together with Kurucz model stellar atmospheres, and information on the strength of the interstellar extinction, to create a model of the expected intensity and spectral distribution of the local interstellar ultraviolet radiation field, under various assumptions concerning the albedo a of the interstellar grains. (This ultraviolet radiation field is of particular interest because of the fact that ultraviolet radiation is capable of profoundly affecting the chemistry of the interstellar medium.) By comparing my models with the observations, I am able to conclude that the albedo a of the interstellar grains in the far ultraviolet is very low, perhaps a = 0.1. I also advance arguments that my present determination of this albedo is much more reliable than any of the many previous (and conflicting) ultraviolet interstellar grain albedo determinations. Beyond this, I show that the ultraviolet background radiation that is observed at high galactic latitudes must be extragalactic in origin, as it cannot be backscatter of the interstellar radiation field.

  12. Vacuum-Ultraviolet (VUV) Photoionization of Small Methanol and Methanol-Water Clusters

    E-Print Network [OSTI]

    Kostko, Oleg

    2008-01-01T23:59:59.000Z

    Vacuum-ultraviolet (VUV) photoionization of small methanolwe report on the vacuum-ultraviolet (VUV) photoionization ofionization with tunable vacuum- ultraviolet synchrotron

  13. Vacuum-ultraviolet (VUV) photoionization of small methanol and methanol-water clusters

    E-Print Network [OSTI]

    Ahmed, Musahid

    2008-01-01T23:59:59.000Z

    Physical Chemistry Vacuum-ultraviolet (VUV) photoionizationPhysical Chemistry Vacuum-ultraviolet (VUV) photoionizationwe report on the vacuum-ultraviolet (VUV) photoionization of

  14. Ice-assisted electron beam lithography of graphene Jules A Gardener1

    E-Print Network [OSTI]

    1 Ice-assisted electron beam lithography of graphene Jules A Gardener1 and Jene A Golovchenko1 with a thin ice layer. The irradiated ice plays a crucial role in the process by providing activated species that locally remove graphene from a silicon dioxide substrate. After patterning the graphene, the ice resist

  15. A novel lithography technique for formation of large areas of uniform nanostructures

    E-Print Network [OSTI]

    Shahriar, Selim

    such as plasmonics, sensors, storage devices, solar cells, nano-filtration and artificial kidneys require applications such as surface plasmonics[1] , data storage[2] , optoelectronic devices[3] , and nanoA novel lithography technique for formation of large areas of uniform nanostructures Wei Wu

  16. Magnetic anisotropy in a permalloy microgrid fabricated by near-field optical lithography

    SciTech Connect (OSTI)

    Li, S. P.; Lebib, A.; Peyrade, D.; Natali, M.; Chen, Y.; Lew, W. S.; Bland, J. A. C.

    2001-07-01T23:59:59.000Z

    We report the fabrication and magnetic properties of permalloy microgrids prepared by near-field optical lithography and characterized using high-sensitivity magneto-optical Kerr effect techniques. A fourfold magnetic anisotropy induced by the grid architecture is identified. {copyright} 2001 American Institute of Physics.

  17. Pure Boron-Doped Photodiodes: a Solution for Radiation Detection in EUV Lithography

    E-Print Network [OSTI]

    Technische Universiteit Delft

    Pure Boron-Doped Photodiodes: a Solution for Radiation Detection in EUV Lithography F. Sarubbi, L for radiation detection in the extreme-ultra-violet (EUV) spectral range. Outstanding electrical and optical has triggered a growing interest in UV radiation detection at wavelengths between 10 nm and 200 nm

  18. Fabrication of magnetic microfiltration systems using soft lithography Tao Deng, Mara Prentiss,a)

    E-Print Network [OSTI]

    Prentiss, Mara

    . The combination of microtransfer molding--a soft lithography technique--and electrodeposition generated nickel, Massachusetts 02138 Received 9 August 2001; accepted for publication 9 November 2001 Arrays of nickel posts were field from an external, permanent, neodymium­iron­boron magnet, these nickel posts generated strong

  19. Wafer-Scale Fabrication of Nanofluidic Arrays and Networks Using Nanoimprint Lithography and Lithographically Patterned Nanowire

    E-Print Network [OSTI]

    Wafer-Scale Fabrication of Nanofluidic Arrays and Networks Using Nanoimprint Lithography of nanofluidic channels (up to 1 mm in length) filled with solutions of either fluorescent dye or 20 nm diameter-replica process was also used to create a large two-dimensional network of crossed nanofluidic channels. Large

  20. Toward Optimized Light Utilization in Nanowire Arrays Using Scalable Nanosphere Lithography and Selected Area Growth

    E-Print Network [OSTI]

    Zhou, Chongwu

    can have application in high-throughput and low-cost optoelectronic devices, including solar cellsToward Optimized Light Utilization in Nanowire Arrays Using Scalable Nanosphere Lithography promising results when used to fabricate light emitters6-10 and photovoltaic devices.11-15 The small contact

  1. Room-temperature Si single-electron memory fabricated by nanoimprint lithography

    E-Print Network [OSTI]

    , Haixiong Ge, Christopher Keimel, and Stephen Y. Chou NanoStructure Laboratory, Department of Electrical using nanoimprint lithography NIL . The devices consist of a narrow channel metal­ oxide­semiconductor field-effect transistor and a sub-10-nm storage dot, which is located between the channel and the gate

  2. Methane Digesters and Biogas Recovery - Masking the Environmental Consequences of Industrial Concentrated Livestock Production

    E-Print Network [OSTI]

    Di Camillo, Nicole G.

    2011-01-01T23:59:59.000Z

    Methane Digesters and Biogas Recovery-Masking theII. METHANE DIGESTERS AND BIOGAs RECOVERY- IN THE2011] METHANE DIGESTERS AND BIOGAS RECOVERY methane, and 64%

  3. Analysis of Optics and Mask Contamination in SEMATECH EUV Micro-Exposure Tools

    E-Print Network [OSTI]

    Wuest, Andrea

    2008-01-01T23:59:59.000Z

    of Optics and Mask Contamination in SEMATECH EUV MioroTools IEUVI Optics Contamination/Lifetime TWG Sapporo,of spot inside visible contamination. sputter time (min) c

  4. Methane Digesters and Biogas Recovery - Masking the Environmental Consequences of Industrial Concentrated Livestock Production

    E-Print Network [OSTI]

    Di Camillo, Nicole G.

    2011-01-01T23:59:59.000Z

    DIGESTERS AND BIOGAS RECOVERY Digesters Do Not Address theMethane Digesters and Biogas Recovery-Masking theII. METHANE DIGESTERS AND BIOGAs RECOVERY- IN THE

  5. Methane Digesters and Biogas Recovery - Masking the Environmental Consequences of Industrial Concentrated Livestock Production

    E-Print Network [OSTI]

    Di Camillo, Nicole G.

    2011-01-01T23:59:59.000Z

    Methane Digesters and Biogas Recovery-Masking theII. METHANE DIGESTERS AND BIOGAs RECOVERY- IN THEA. Digesters Have Received Attention for Their Potential to

  6. Ultraviolet Limit of Open String Theory

    E-Print Network [OSTI]

    Shyamoli Chaudhuri

    2005-01-21T23:59:59.000Z

    We confirm the intuition that a string theory which is perturbatively infrared finite is automatically perturbatively ultraviolet finite. Our derivation based on the asymptotics of the Selberg trace formula for the Greens function on a Riemann surface holds for both open and closed string amplitudes and is independent of modular invariance and supersymmetry. The mass scale for the open strings stretched between Dbranes suggests a natural world-sheet ultraviolet regulator in the string path integral, preserving both T-duality and open-closed string world-sheet duality. Note added (Jan 2005): Comments and related references added.

  7. The Application of Ultraviolet Germicidal Technology in HVAC Systems

    E-Print Network [OSTI]

    Taylor, M. J.

    2000-01-01T23:59:59.000Z

    capability, which increases the operating costs of the equipment. Fortunately, IAQ degradation, foul odor, and increased expenses can be eliminated with the installation of the ultraviolet 'C' band (W-C) lamps. The ultraviolet germicidal lamps are designed...

  8. The Mask Manufacturing Unit (MMU), one of the three main components of the

    E-Print Network [OSTI]

    Liske, Jochen

    of the VIRMOS Laser Mask Manufacturing Unit (MMU) at Paranal G. AVILA1, G. CONTI2, E. MATTAINI2, L. CHIAPPETTI 2 under a 16 bar compressed air jet. The laser system (manufactured by the German LPKF company) is also1 The Mask Manufacturing Unit (MMU), one of the three main components of the VIRMOS project, has

  9. Graphene Edge Lithography Guibai Xie, Zhiwen Shi, Rong Yang, Donghua Liu, Wei Yang, Meng Cheng, Duoming Wang, Dongxia Shi,

    E-Print Network [OSTI]

    Zhang, Guangyu

    Graphene Edge Lithography Guibai Xie, Zhiwen Shi, Rong Yang, Donghua Liu, Wei Yang, Meng Cheng: Fabrication of graphene nanostructures is of importance for both investigating their intrinsic physical approach for graphene nanostructures. Compared with conventional lithographic fabrication techniques

  10. Design and analysis of a scanning beam interference lithography system for patterning gratings with nanometer-level distortions

    E-Print Network [OSTI]

    Konkola, Paul Thomas, 1973-

    2003-01-01T23:59:59.000Z

    This thesis describes the design and analysis of a system for patterning large-area gratings with nanometer level phase distortions. The novel patterning method, termed scanning beam interference lithography (SBIL), uses ...

  11. Ultraviolet emissions from Gd3 + ions excited by energy transfer

    E-Print Network [OSTI]

    Cao, Wenwu

    Ultraviolet emissions from Gd3 + ions excited by energy transfer from Ho3 + ions Ying Yu October 2010 Accepted 28 October 2010 Available online 4 November 2010 Keywords: Ultraviolet emission Upconversion Energy transfer a b s t r a c t Ultraviolet (UV) upconversion (UC) emissions of Gd3+ ion were

  12. Microwave-driven ultraviolet light sources

    SciTech Connect (OSTI)

    Manos, Dennis M. (Williamsburg, VA); Diggs, Jessie (Norfolk, VA); Ametepe, Joseph D. (Roanoke, VA)

    2002-01-29T23:59:59.000Z

    A microwave-driven ultraviolet (UV) light source is provided. The light source comprises an over-moded microwave cavity having at least one discharge bulb disposed within the microwave cavity. At least one magnetron probe is coupled directly to the microwave cavity.

  13. ATOMIC FORCE LITHOGRAPHY OF NANO/MICROFLUIDIC CHANNELS FOR VERIFICATION AND MONITORING OF AQUEOUS SOLUTIONS

    SciTech Connect (OSTI)

    Mendez-Torres, A.; Torres, R.; Lam, P.

    2011-07-15T23:59:59.000Z

    The growing interest in the physics of fluidic flow in nanoscale channels, as well as the possibility for high sensitive detection of ions and single molecules is driving the development of nanofluidic channels. The enrichment of charged analytes due to electric field-controlled flow and surface charge/dipole interactions along the channel can lead to enhancement of sensitivity and limits-of-detection in sensor instruments. Nuclear material processing, waste remediation, and nuclear non-proliferation applications can greatly benefit from this capability. Atomic force microscopy (AFM) provides a low-cost alternative for the machining of disposable nanochannels. The small AFM tip diameter (< 10 nm) can provide for features at scales restricted in conventional optical and electron-beam lithography. This work presents preliminary results on the fabrication of nano/microfluidic channels on polymer films deposited on quartz substrates by AFM lithography.

  14. ATOMIC FORCE LITHOGRAPHY OF NANO MICROFLUIDIC CHANNELS FOR VERIFICATION AND MONITORING IN AQUEOUS SOLUTIONS

    SciTech Connect (OSTI)

    Torres, R.; Mendez-Torres, A.; Lam, P.

    2011-06-09T23:59:59.000Z

    The growing interest in the physics of fluidic flow in nanoscale channels, as well as the possibility for high sensitive detection of ions and single molecules is driving the development of nanofluidic channels. The enrichment of charged analytes due to electric field-controlled flow and surface charge/dipole interactions along the channel can lead to enhancement of sensitivity and limits-of-detection in sensor instruments. Nuclear material processing, waste remediation, and nuclear non-proliferation applications can greatly benefit from this capability. Atomic force microscopy (AFM) provides a low-cost alternative for the machining of disposable nanochannels. The small AFM tip diameter (< 10 nm) can provide for features at scales restricted in conventional optical and electron-beam lithography. This work presents preliminary results on the fabrication of nano/microfluidic channels on polymer films deposited on quartz substrates by AFM lithography.

  15. Background sources and masks for Mark II detector at PEP

    SciTech Connect (OSTI)

    Kadyk, J.

    1981-06-01T23:59:59.000Z

    The shielding masks currently at use in several of the current experiments at PEP are the result of an early organized effort to understand the sources of particle background expected at PEP, followed by the evolution of the conceptual designs into actual hardware. The degree and kind of background particle loading which could be tolerated was expected to differ significantly among the different experiments, and several designs emerged from the common study. Qualitatively, the types of radiations studied were, Synchrotron Radiation (SR), Beam Gas Bremsstrahlung (BGB), and, to a limited extent others, e.g., Electroproduction (EP). Calculations will be given of predicted occupancies in the pipe counter and other sensitive elements at small radius, since these will be most susceptible to the SR and BGB backgrounds. The calculations presented in this note are specific to the Mark II detector. Some general statements will be made first about the character of each of the various types of backgrounds considered, then some detailed calculations made for application to the Mark II detector.

  16. Proceedings of NAMRI/SME, Vol. 40, 2012 Smooth Surface Fabrication in Mask Projection based

    E-Print Network [OSTI]

    Chen, Yong

    Proceedings of NAMRI/SME, Vol. 40, 2012 Smooth Surface Fabrication in Mask Projection based-stepping effect. #12;Proceedings of NAMRI/SME, Vol. 40, 2012 In this paper, we present an alternative approach

  17. Integrated circuit mask generation using a raster scanned laser trimming system

    E-Print Network [OSTI]

    Gourley, Kevin Dwayne

    1982-01-01T23:59:59.000Z

    INTEGRATED CIRCUIT MASK GENERATION USING A RASTER SCANNED LASER TRIMMING SYSTEM A Thesis by KEVIN DWAYNE GOURLEY Submitted to the Graduate College of Texas AA M University in partial fulfillment of the requirement for the degree of MASTER... OF SCIENCE May 1982 Major Subject: Electrical Engineering INTEGRATED CIRCUIT MASK GENERATION USING A RASTER SCANNED LASER TRIMMING SYSTEM A Thesis by KEVIN DWAYNE GOURLEY Approved as to style and content by: hair ma ommittee Dr . Dou as M. Green 4...

  18. A particle-in-cell plus Monte Carlo study of plasma-induced damage of normal incidence collector optics used in extreme ultraviolet lithography

    E-Print Network [OSTI]

    Zegeling, Paul

    ,6 In this paper, we present a study of plasma-induced sput- tering damage to the collector, using a spherical 3d3v at which the ions are created and their final energy is studied, revealing how the evolution In semiconductor industries there is a continuous de- mand for printing smaller structures on silicon wafers

  19. Random laser from engineered nanostructures obtained by surface tension driven lithography

    E-Print Network [OSTI]

    Ghofraniha, N; Di Maria, F; Barbarella, G; Gigli, G; Conti, C

    2013-01-01T23:59:59.000Z

    The random laser emission from the functionalized thienyl-S,S-dioxide quinquethiophene (T5OCx) in confined patterns with different shapes is demonstrated. Functional patterning of the light emitter organic material in well defined features is obtained by spontaneous molecular self-assembly guided by surface tension driven (STD) lithography. Such controlled supramolecular nano-aggregates act as scattering centers allowing the fabrication of one-component organic lasers with no external resonator and with desired shape and efficiency. Atomic force microscopy shows that different geometric pattern with different supramolecular organization obtained by the lithographic process tailors the coherent emission properties by controlling the distribution and the size of the random scatterers.

  20. Diffraction spectral filter for use in extreme-UV lithography condenser

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Tichenor, Daniel A. (Castro Valley, CA); Bernardez, Luis J. (Livermore, CA)

    2002-01-01T23:59:59.000Z

    A condenser system for generating a beam of radiation includes a source of radiation light that generates a continuous spectrum of radiation light; a condenser comprising one or more first optical elements for collecting radiation from the source of radiation light and for generating a beam of radiation; and a diffractive spectral filter for separating first radiation light having a particular wavelength from the continuous spectrum of radiation light. Cooling devices can be employed to remove heat generated. The condenser system can be used with a ringfield camera in projection lithography.

  1. Photonic assisted light trapping integrated in ultrathin crystalline silicon solar cells by nanoimprint lithography

    E-Print Network [OSTI]

    Trompoukis, Christos; Depauw, Valérie; Gordon, Ivan; Poortmans, Jef; 10.1063/1.4749810.

    2012-01-01T23:59:59.000Z

    We report on the fabrication of two-dimensional periodic photonic nanostructures by nanoimprint lithography and dry etching, and their integration into a 1-{\\mu}m-thin mono-crystalline silicon solar cell. Thanks to the periodic nanopatterning, a better in-coupling and trapping of light is achieved, resulting in an absorption enhancement. The proposed light trapping mechanism can be explained as the superposition of a graded index effect and of the diffraction of light inside the photoactive layer. The absorption enhancement is translated into a 23% increase in short-circuit current, as compared to the benchmark cell, resulting in an increase in energy-conversion efficiency.

  2. Ultra-lightweight nanorelief networks : photopatterned microframes

    E-Print Network [OSTI]

    Choi, Taeyi

    2007-01-01T23:59:59.000Z

    Lightweight nano-network structures in polymers have been fabricated and investigated for their mechanical properties. Fabrication techniques via holographic interference lithography and phase mask lithography were implemented ...

  3. ULTRAVIOLET EXTINCTION AT HIGH GALACTIC LATITUDES

    SciTech Connect (OSTI)

    Peek, J. E. G.; Schiminovich, David, E-mail: jegpeek@gmail.com [Department of Astronomy, Columbia University, New York, NY (United States)

    2013-07-01T23:59:59.000Z

    In order to study the properties and effects of high Galactic latitude dust, we present an analysis of 373,303 galaxies selected from the Galaxy Evolution Explorer All-Sky Survey and Wide-field Infrared Explorer All-Sky Data Release. By examining the variation in aggregate ultraviolet colors and number density of these galaxies, we measure the extinction curve at high latitude. We additionally consider a population of spectroscopically selected galaxies from the Sloan Digital Sky Survey to measure extinction in the optical. We find that dust at high latitude is neither quantitatively nor qualitatively consistent with standard reddening laws. Extinction in the FUV and NUV is {approx}10% and {approx}35% higher than expected, with significant variation across the sky. We find that no single R{sub V} parameter fits both the optical and ultraviolet extinction at high latitude, and that while both show detectable variation across the sky, these variations are not related. We propose that the overall trends we detect likely stem from an increase in very small silicate grains in the interstellar medium.

  4. THORIUM-BASED MIRRORS IN THE EXTREME ULTRAVIOLET Nicole Farnsworth

    E-Print Network [OSTI]

    Hart, Gus

    THORIUM-BASED MIRRORS IN THE EXTREME ULTRAVIOLET by Nicole Farnsworth Submitted to Brigham Young Ultraviolet and Thorium-based Mirrors . . . 1 1.2 Project Background the Optical Constants of Thorium Oxide 34 3.1 Reflectance and Transmittance Measurements

  5. Soft holographic interference lithography microlens for enhanced organic light emitting diode light extraction

    SciTech Connect (OSTI)

    Park, Joong-Mok; Gan, Zhengqing; Leung, Wai Y.; Liu, Rui; Ye, Zhuo; Constant, Kristen; Shinar, Joseph; Shinar, Ruth; Ho, Kai-Ming

    2011-06-06T23:59:59.000Z

    Very uniform 2 {micro}m-pitch square microlens arrays ({micro}LAs), embossed on the blank glass side of an indium-tin-oxide (ITO)-coated 1.1 mm-thick glass, are used to enhance light extraction from organic light-emitting diodes (OLEDs) by {approx}100%, significantly higher than enhancements reported previously. The array design and size relative to the OLED pixel size appear to be responsible for this enhancement. The arrays are fabricated by very economical soft lithography imprinting of a polydimethylsiloxane (PDMS) mold (itself obtained from a Ni master stamp that is generated from holographic interference lithography of a photoresist) on a UV-curable polyurethane drop placed on the glass. Green and blue OLEDs are then fabricated on the ITO to complete the device. When the {mu}LA is {approx}15 x 15 mm{sup 2}, i.e., much larger than the {approx}3 x 3 mm{sup 2} OLED pixel, the electroluminescence (EL) in the forward direction is enhanced by {approx}100%. Similarly, a 19 x 25 mm{sup 2} {mu}LA enhances the EL extracted from a 3 x 3 array of 2 x 2 mm{sup 2} OLED pixels by 96%. Simulations that include the effects of absorption in the organic and ITO layers are in accordance with the experimental results and indicate that a thinner 0.7 mm thick glass would yield a {approx}140% enhancement.

  6. Extending ion-track lithography to the low-energy ion regime

    SciTech Connect (OSTI)

    Musket, R.G. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)

    2006-06-01T23:59:59.000Z

    Ion tracking and ion-track lithography have been performed almost exclusively using ions with energies near or above the maximum in electronic stopping, which occurs at {approx}1 MeV/amu. In this paper, ion-track lithography using ions with energies well below this maximum is discussed. The results of etching ion tracks created in polycarbonate films by ions with energies just above the anticipated threshold for creating etchable latent tracks with cylindrical geometry have been examined. Low-energy neon and argon ions with 18-60 keV/amu and fluences of {approx}10{sup 8} cm{sup -2} were used to examine the limits for producing useful, etchable tracks in polycarbonate films. By concentrating on the early stages of etching (i.e., {approx}20 nm

  7. Extending ion-track lithography to the low-energy ion regime

    SciTech Connect (OSTI)

    Musket, R G

    2005-10-14T23:59:59.000Z

    Ion tracking and ion-track lithography have been performed almost exclusively using ions with energies near or above the maximum in electronic stopping, which occurs at {approx}1 MeV/amu. In this paper, ion-track lithography using ions with energies well below this maximum is discussed. The results of etching ion tracks created in polycarbonate films by ions with energies just above the anticipated threshold for creating etchable latent tracks with cylindrical geometry have been examined. Low-energy neon and argon ions with 18-60 keV/amu and fluences of {approx}10{sup 8}/cm{sup 2} were used to examine the limits for producing useful, etchable tracks in polycarbonate films. By concentrating on the early stages of etching (i.e., {approx}20 nm < SEM hole diameter < {approx}100 nm), the energy deposition calculated for the incident ion was correlated with the creation of etchable tracks. The experimental results are discussed with regard to the energy losses of the ions in the polycarbonate films and to the formation of continuous latent tracks through the entire thickness of the films. The probability distributions for large-angle scattering events were calculated to assess their importance as a function of ion energy. All these results have significant implications with respect to the threshold for formation of etchable tracks and to the use of low-energy ions for lithographic applications of ion tracking.

  8. Evaluation of Setup Uncertainties for Single-Fraction SRS by Comparing the Two Different Mask-Creation Methods

    E-Print Network [OSTI]

    Baek, Jong Geun; Oh, Young Kee; Lee, Hyun Jeong; Kim, Eng Chan

    2015-01-01T23:59:59.000Z

    The purpose of this study was to evaluate the setup uncertainties for single-fraction stereotactic radiosurgery (SF-SRS) based on the clinical data with the two different mask-creation methods using pretreatment CBCT imaging guidance. Dedicated frameless fixation BrainLAB masks for 23 patients were created as a routine mask (R-mask) making method, as explained in the BrainLAB user manual. The alternative masks (A-mask) which were created by modifying the cover range of the R-mask for the patient head were used for 23 patients. The systematic errors including the each mask and stereotactic target localizer were analyzed and the errors were calculated as the mean and standard deviation (SD) from the LR, SI, AP, and yaw setup corrections. In addition, the frequency of three-dimensional (3D) vector length were also analyzed. The values of the mean setup corrections for the R-mask in all directions were small; < 0.7 mm and < 0.1 degree, whereas the magnitudes of the SDs were relatively large compared to the ...

  9. Ultraviolet laser beam monitor using radiation responsive crystals

    DOE Patents [OSTI]

    McCann, Michael P. (Oliver Springs, TN); Chen, Chung H. (Knoxville, TN)

    1988-01-01T23:59:59.000Z

    An apparatus and method for monitoring an ultraviolet laser beam includes disposing in the path of an ultraviolet laser beam a substantially transparent crystal that will produce a color pattern in response to ultraviolet radiation. The crystal is exposed to the ultraviolet laser beam and a color pattern is produced within the crystal corresponding to the laser beam intensity distribution therein. The crystal is then exposed to visible light, and the color pattern is observed by means of the visible light to determine the characteristics of the laser beam that passed through crystal. In this manner, a perpendicular cross sectional intensity profile and a longitudinal intensity profile of the ultraviolet laser beam may be determined. The observation of the color pattern may be made with forward or back scattered light and may be made with the naked eye or with optical systems such as microscopes and television cameras.

  10. PATENT/DISCLOSURE LIST (1) A. Bindal, "Sidewall Lithography for Growing Horizontal Carbon Nano Tubes and a

    E-Print Network [OSTI]

    Eirinaki, Magdalini

    Tubes and a Process Flow for Complementary Carbon Nano Tube Field Effect Transistor (CCFET) FabricationPATENT/DISCLOSURE LIST (1) A. Bindal, "Sidewall Lithography for Growing Horizontal Carbon Nano for Manufacturing Nano-Interconnects and Catalyst Islands for Growing Carbon Nano Tubes", provisional patent

  11. Polymer sphere lithography for solid oxide fuel cells: a route to functional, well-defined electrode structures

    E-Print Network [OSTI]

    Polymer sphere lithography for solid oxide fuel cells: a route to functional, well. Introduction Dramatic breakthroughs in the materials, particularly electrode materials, for solid oxide fuel cells (SOFCs) have been reported in recent years.1­3 Fundamental understanding of the electro- catalytic

  12. Scanning probe lithography of self-assembled monolayers Guohua Yang, Nabil A. Amro, Gang-yu Liu*

    E-Print Network [OSTI]

    Liu, Gang-yu

    Scanning probe lithography of self-assembled monolayers Guohua Yang, Nabil A. Amro, Gang-yu Liu* Department ofChemistry, University ofCalifornia, Davis, CA, USA 95616 ABSTRACT Systematic studies on scanning, and nanopen reader and writer (NPRW), which rely on the local force, and two scanning tunneling microscopy

  13. Fabrication of planar quantum magnetic disk structure using electron beam lithography, reactive ion etching, and chemical mechanical polishing

    E-Print Network [OSTI]

    Fabrication of planar quantum magnetic disk structure using electron beam lithography, reactive ion, Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455 Received 2 June's size and location, and reactive ion etching was used to form an SiO2 template. Nickel electroplating

  14. A novel approach to reconstructing signals of isotropy violation from a masked CMB sky

    E-Print Network [OSTI]

    Aluri, Pavan K; Rotti, Aditya; Souradeep, Tarun

    2015-01-01T23:59:59.000Z

    Statistical isotropy (SI) is one of the fundamental assumptions made in cosmological model building. This assumption is now being rigorously tested using the almost full sky measurements of the CMB anisotropies. A major hurdle in any such analysis is to handle the large biases induced due to the process of masking. We have developed a new method of analysis, using the bipolar spherical harmonic basis functions, in which we semi-analytically evaluate the modifications to SI violation induced by the mask. The method developed here is generic and can be potentially used to search for any arbitrary form of SI violation. We specifically demonstrate the working of this method by recovering the Doppler boost signal from a set of simulated, masked CMB skies.

  15. Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices

    DOE Patents [OSTI]

    Morse, Jeffrey D. (Martinez, CA); Contolini, Robert J. (Lake Oswego, OR)

    2001-01-01T23:59:59.000Z

    A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.

  16. Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO[subscript 2] Resists

    E-Print Network [OSTI]

    Mendoza, Hiroshi A.

    To address the incompatibility of organic semiconductors with traditional photolithography, an inert, frozen CO[subscript 2] resist is demonstrated that forms an in situ shadow mask. Contact with a room-temperature ...

  17. Reflective optical imaging system

    DOE Patents [OSTI]

    Shafer, David R. (Fairfield, CT)

    2000-01-01T23:59:59.000Z

    An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four reflective elements for projecting a mask image onto a substrate. The four optical elements are characterized in order from object to image as convex, concave, convex and concave mirrors. The optical system is particularly suited for step and scan lithography methods. The invention increases the slit dimensions associated with ringfield scanning optics, improves wafer throughput and allows higher semiconductor device density.

  18. Reflective optical imaging method and circuit

    DOE Patents [OSTI]

    Shafer, David R. (Fairfield, CT)

    2001-01-01T23:59:59.000Z

    An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four reflective elements for projecting a mask image onto a substrate. The four optical elements are characterized in order from object to image as convex, concave, convex and concave mirrors. The optical system is particularly suited for step and scan lithography methods. The invention increases the slit dimensions associated with ringfield scanning optics, improves wafer throughput and allows higher semiconductor device density.

  19. A NOVEL APPROACH TO SOFT-MASK ESTIMATION AND LOG-SPECTRAL ENHANCEMENT FOR ROBUST SPEECH RECOGNITION

    E-Print Network [OSTI]

    Alwan, Abeer

    A NOVEL APPROACH TO SOFT-MASK ESTIMATION AND LOG-SPECTRAL ENHANCEMENT FOR ROBUST SPEECH RECOGNITION-- Speech Recognition, Feature Extraction, Speech Enhancement, Mask Estimation, Median Filtering. 1 enhancement. Reliable SPPs provide clues about the spectro-temporal location of speech and are thus a highly

  20. Failure of signed chromatic apparent motion with luminance masking Tatsuya Yoshizawa, Kathy T. Mullen, Curtis L. Baker Jr. *

    E-Print Network [OSTI]

    Mullen, Kathy T.

    Failure of signed chromatic apparent motion with luminance masking Tatsuya Yoshizawa, Kathy T measured in the presence of a dynamic luminance masking noise. Increasing the luminance noise contrast­green chromatic motion is derived from a luminance- based signal, rather than a genuinely chromatic motion

  1. A direct-write thick-film lithography process for multi-parameter control of tooling in continuous roll-to-roll microcontact printing

    E-Print Network [OSTI]

    Nietner, Larissa F

    2014-01-01T23:59:59.000Z

    Roll-to-roll (R2R) microcontact printing ([mu]CP) aims to transform micron-precision soft lithography in a continuous, large-scale, high-throughput process for large-area surface patterning, flexible electronics and ...

  2. The application of nanosecond-pulsed laser welding technology in MEMS packaging with a shadow mask$

    E-Print Network [OSTI]

    Lin, Liwei

    The application of nanosecond-pulsed laser welding technology in MEMS packaging with a shadow mask wiring is not pre- ferred. A comprehensive review on laser welding was given in [6]. The laser welding of laser welding is to create the liquid pool by absorption of incident radiation, allow it to grow

  3. Computer-aided engineering system for design of sequence arrays and lithographic masks

    DOE Patents [OSTI]

    Hubbell, Earl A. (Mt. View, CA); Lipshutz, Robert J. (Palo Alto, CA); Morris, Macdonald S. (San Jose, CA); Winkler, James L. (Palo Alto, CA)

    1997-01-01T23:59:59.000Z

    An improved set of computer tools for forming arrays. According to one aspect of the invention, a computer system is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files to design and/or generate lithographic masks.

  4. Mask estimation for missing data speech recognition based on statistics of binaural interaction

    E-Print Network [OSTI]

    Barker, Jon

    1 Mask estimation for missing data speech recognition based on statistics of binaural interaction to a target sound source in the presence of other This work was funded by EPSRC grant GR/R47400 comparisons are used to cancel interfering sound sources [5] or actively group acoustic energy which

  5. Multi-Color Coronagraph Experiment in a Vacuum Testbed with a Binary Shaped Pupil Mask

    E-Print Network [OSTI]

    Haze, Kanae; Abe, Lyu; Kotani, Takayuki; Nakagawa, Takao; Sato, Toshimichi; Yamamuro, Tomoyasu

    2011-01-01T23:59:59.000Z

    We conducted a number of multi-band coronagraph experiments using a vacuum chamber and a binary-shaped pupil mask which in principle should work at all wavelengths, in the context of the research and development on a coronagraph to observe extra-solar planets (exoplanets) directly. The aim of this work is to demonstrate that subtraction of Point Spread Function (PSF) and multi-band experiments using a binary-shaped pupil mask coronagraph would help improve the contrast in the observation of exoplanets. A checkerboard mask, a kind of binary-shaped pupil mask, was used. We improved the temperature stability by installing the coronagraph optics in a vacuum chamber, controlling the temperature of the optical bench, and covering the vacuum chamber with thermal insulation layers. We evaluated how much the PSF subtraction contributes to the high contrast observation by subtracting the images obtained through the coronagraph. We also carried out multi- band experiments in order to demonstrate a more realistic observa...

  6. Analysis of a Mask-Based Nanowire Decoder Eric Rachlin, John E. Savage and Benjamin Gojman

    E-Print Network [OSTI]

    DeHon, André

    a moderate number of mesoscale wires. Three methods have been proposed to use mesoscale wires to control random doped connections between nanowires and mesoscale wires, and the third, a mask-based approach, in- terposes high-K dielectric regions between nanowires and mesoscale wires. All three addressing schemes

  7. Track-etched nanopores in spin-coated polycarbonate films applied as sputtering mask

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    - 2 - Track-etched nanopores in spin-coated polycarbonate films applied as sputtering mask A Schwerionenforschung (GSI), Darmstadt, Germany 4 Hahn-Meitner-Institut, Berlin, Germany Abstract Thin polycarbonate.80.Jh; 61.82Pv Keywords: polycarbonate, ion track, etching, sputtering, swift heavy ion irradiation #12

  8. Genetic refinement of cloud-masking algorithms for the multi-spectral thermal imager (MTI)

    SciTech Connect (OSTI)

    Hirsch, K. L. (Karen L.); Davis, A. B. (Anthony B.); Harvey, N. R. (Neal R.); Rohde, C. A. (Charles A.); Brumby, Steven P.

    2001-01-01T23:59:59.000Z

    The Multi-spectral Thermal Imager (MTI) is a high-performance remote-sensing satellite designed, owned and operated by the U.S. Department of Energy, with a dual mission in environmental studies and in nonproliferation. It has enhanced spatial and radiometric resolutions and state-of-the-art calibration capabilities. This instrumental development puts a new burden on retrieval algorithm developers to pass this accuracy on to the inferred geophysical parameters. In particular, the atmospheric correction scheme assumes the intervening atmosphere will be modeled as a plane-parallel horizontally-homogeneous medium. A single dense-enough cloud in view of the ground target can easily offset reality from the calculations, hence the need for a reliable cloud-masking algorithm. Pixel-scale cloud detection relies on the simple facts that clouds are generally whiter, brighter, and colder than the ground below; spatially, dense clouds are generally large on some scale. This is a good basis for searching multispectral datacubes for cloud signatures. However, the resulting cloud mask can be very sensitive to the choice of thresholds in whiteness, brightness, temperature, and connectivity. We have used a genetic algorithm trained on (MODIS Airborne Simulator-based) simulated MTI data to design a cloud-mask. Its performance is compared quantitatively to hand-drawn training data and to the EOS/Terra MODIS cloud mask.

  9. Model Selection for the Competing-Risks Model With and Without Masking

    E-Print Network [OSTI]

    Lee, Chun Man "Thomas"

    Department of Statistics Colorado State University Fort Collins, CO 80523-1877 (tlee@stat.colostate.edu) The competing-risks model is useful in settings in which individuals (or units) may die (or fail) because for competing-risks data with and without masking involves the specification of cause-specific hazard rates

  10. SINGLE-MASK, HIGH ASPECT RATIO, 3-D MICROMACHINING OF BULK TITANIUM , M. F. Aimi2

    E-Print Network [OSTI]

    MacDonald, Noel C.

    SINGLE-MASK, HIGH ASPECT RATIO, 3-D MICROMACHINING OF BULK TITANIUM M. P. Rao1 , M. F. Aimi2 , E. R profiles in bulk titanium. The method relies on the exploitation of Reactive Ion Etching Lag (RIE Lag for application in bulk micromachined titanium micromirror devices. 1. INTRODUCTION The recent development

  11. Giving and Thanksgiving: Gratitude and Adiaphora in A Mask and Paradise Regained

    E-Print Network [OSTI]

    Newberry, Julie Nicole

    2011-10-21T23:59:59.000Z

    in Paradise Lost, but scholars have not fully appreciated the role of this virtue elsewhere in Milton's writing. This thesis is an attempt to redress that oversight with reference to A Mask and Paradise Regained, while also answering a question that Medine...

  12. Comparison of sequence masking algorithms and the detection of biased protein sequence

    E-Print Network [OSTI]

    Kreil, David

    Comparison of sequence masking algorithms and the detection of biased protein sequence regions;Abstract Motivation Separation of protein sequence regions according to their local information complexity by sequence similarity. Comparison with alternative methods that focus on compositional sequence bias rather

  13. Quantitative imaging of living cells by deep ultraviolet microscopy

    E-Print Network [OSTI]

    Zeskind, Benjamin J

    2006-01-01T23:59:59.000Z

    Developments in light microscopy over the past three centuries have opened new windows into cell structure and function, yet many questions remain unanswered by current imaging approaches. Deep ultraviolet microscopy ...

  14. Can we stop the spread of influenza in schools with face masks?

    SciTech Connect (OSTI)

    Del Valle, Sara Y [Los Alamos National Laboratory; Tellier, Raymond [UNIV OF CALGARY; Settles, Gary [UNIV PARK; Tang, Julian [NATIONAL UNIV OF SINGAPORE

    2009-01-01T23:59:59.000Z

    In the absence of a strain-specific vaccine and the potential resistance to antiviral medication, nonpharmaceutical interventions can be used to reduce the spread of an infectious disease such as influenza. The most common non-pharmaceutical interventions include school closures, travel restrictions, social distancing, enforced or volunteer home isolation and quarantine, improved hand hygiene, and the appropriate wearing of face masks. However, for some of these interventions, there are some unavoidable economic costs to both employees and employers, as well as possible additional detriment to society as a whole. For example, it has been shown that school-age children are most likely to be infected and act as sources of infection for others, due to their greater societal interaction and increased susceptibility. Therefore, preventing or at least reducing infections in children is a logical first-line of defense. For this reason, school closures have been widely investigated and recommended as part of pandemic influenza preparedness, and some studies support this conclusion. Yet, school closures would result in lost work days if at least one parent must be absent from work to care for children who would otherwise be at school. In addition, the delay in-academic progress may be detrimental due to mass school absenteeism. In particular, the pandemic influenza guidance by the U.S. Department of Health and Human Services recommends school closures for less than four weeks for Category 2 and 3 pandemics (i.e., similar to the milder 1957 and 1968 pandemics) and one to three months for Category 4 and 5 pandemics (i .e., similar to the 1918 pandemic ). Yet, given the above, it is clear that closing schools for up to three months is unlikely to be a practical mitigation strategy for many families and society. Thus modelers and policy makers need to weigh all factors before recommending such drastic measures, particularly if the agent under consideration typically has low mortality and causes a mild disease. Therefore, we contend that face masks are an effective, practical, non-pharmaceutical intervention that would reduce the spread of disease among school-children, while keeping schools open. Influenza spreads through person-to-person contact, via transmission by large droplets or aerosols (droplet nuclei) produced by breathing, talking, coughing or sneezing, as well as by direct (though most people touch very few others in their daily lives) or indirect (i.e., via fomites) contact. Face masks act as a physical barrier to reduce the amount of potentially infectious inhaled and exhaled particles, although they would not reliably protect the wearer against aerosols; a recent study also demonstrated that they can redirect and decelerate exhaled airflows (when worn by an infected individual) to prevent them from entering the breathing zones of others. Thus, if a whole classroom were to don face masks, disease transmission would be expected to be greatly diminished. Another recent study on face masks and hand hygiene show a 10-50% transmission reduction for influenza-like illnesses. Furthermore, face masks can act as an effective physical reminder and barrier to transmission by preventing the wearer from touching any potentially infectious secretions from their mucous membranes (i.e., from the nose and mouth), which is another mechanism for direct and indirect contact transmission for influenza. A recent systematic review has suggested that wearing masks can be highly effective in limiting the transmission of respiratory infections, such as influenza. Yet, admittedly, the effectiveness of this intervention strategy is highly dependent on compliance (i.e., the willingness to wear the mask in all appropriate situations), which in tum depends on comfort, convenience, fitness, and hygiene. Importantly, masks themselves must not become a source of infection (or reinfection); as such they should be replaced or sanitized daily (where possible) to maximize effectiveness. One solution could be for masks to be touted as fashion accessories, whi

  15. System and methods for determining masking signals for applying empirical mode decomposition (EMD) and for demodulating intrinsic mode functions obtained from application of EMD

    DOE Patents [OSTI]

    Senroy, Nilanjan (New Delhi, IN); Suryanarayanan, Siddharth (Littleton, CO)

    2011-03-15T23:59:59.000Z

    A computer-implemented method of signal processing is provided. The method includes generating one or more masking signals based upon a computed Fourier transform of a received signal. The method further includes determining one or more intrinsic mode functions (IMFs) of the received signal by performing a masking-signal-based empirical mode decomposition (EMD) using the at least one masking signal.

  16. Lamp for generating high power ultraviolet radiation

    DOE Patents [OSTI]

    Morgan, Gary L. (Elkridge, MD); Potter, James M. (Los Alamos, NM)

    2001-01-01T23:59:59.000Z

    The apparatus is a gas filled ultraviolet generating lamp for use as a liquid purifier. The lamp is powred by high voltage AC, but has no metallic electrodes within or in contact with the gas enclosure which is constructed as two concentric quartz cylinders sealed together at their ends with the gas fill between the cylinders. Cooling liquid is pumped through the volume inside the inner quartz cylinder where an electrically conductive pipe spaced from the inner cylinder is used to supply the cooling liquid and act as the high voltage electrode. The gas enclosure is enclosed within but spaced from a metal housing which is connected to operate as the ground electrode of the circuit and through which the treated fluid flows. Thus, the electrical circuit is from the central pipe, and through the cooling liquid, the gas enclosure, the treated liquid on the outside of the outer quartz cylinder, and to the housing. The high voltage electrode is electrically isolated from the source of cooling liquid by a length of insulated hose which also supplies the cooling liquid.

  17. Intense ultraviolet perturbations on aquatic primary producers

    E-Print Network [OSTI]

    Guimarais, Mayrene; Horvath, Jorge

    2010-01-01T23:59:59.000Z

    During the last decade, the hypothesis that one or more biodiversity drops in the Phanerozoic eon, evident in the geological record, might have been caused by the most powerful kind of stellar explosion so far known (Gamma Ray Bursts) has been discussed in several works. These stellar explosions could have left an imprint in the biological evolution on Earth and in other habitable planets. In this work we calculate the short-term lethality that a GRB would produce in the aquatic primary producers on Earth. This effect on life appears as a result of ultraviolet (UV) re-transmission in the atmosphere of a fraction of the gamma energy, resulting in an intense UV flash capable of penetrating ~ tens of meters in the water column in the ocean. We focus on the action of the UV flash on phytoplankton, as they are the main contributors to global aquatic primary productivity. Our results suggest that the UV flash could cause an hemispheric reduction of phytoplankton biomass in the upper mixed layer of the World Ocean o...

  18. Vacuum ultraviolet photoionization of carbohydrates and nucleotides

    SciTech Connect (OSTI)

    Shin, Joong-Won, E-mail: jshin@govst.edu [Division of Science, Governors State University, University Park, Illinois 60484-0975 (United States) [Division of Science, Governors State University, University Park, Illinois 60484-0975 (United States); Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523-1872 (United States); Bernstein, Elliot R., E-mail: erb@lamar.colostate.edu [Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523-1872 (United States)

    2014-01-28T23:59:59.000Z

    Carbohydrates (2-deoxyribose, ribose, and xylose) and nucleotides (adenosine-, cytidine-, guanosine-, and uridine-5{sup ?}-monophosphate) are generated in the gas phase, and ionized with vacuum ultraviolet photons (VUV, 118.2 nm). The observed time of flight mass spectra of the carbohydrate fragmentation are similar to those observed [J.-W. Shin, F. Dong, M. Grisham, J. J. Rocca, and E. R. Bernstein, Chem. Phys. Lett. 506, 161 (2011)] for 46.9 nm photon ionization, but with more intensity in higher mass fragment ions. The tendency of carbohydrate ions to fragment extensively following ionization seemingly suggests that nucleic acids might undergo radiation damage as a result of carbohydrate, rather than nucleobase fragmentation. VUV photoionization of nucleotides (monophosphate-carbohydrate-nucleobase), however, shows that the carbohydrate-nucleobase bond is the primary fragmentation site for these species. Density functional theory (DFT) calculations indicate that the removed carbohydrate electrons by the 118.2 nm photons are associated with endocyclic C–C and C–O ring centered orbitals: loss of electron density in the ring bonds of the nascent ion can thus account for the observed fragmentation patterns following carbohydrate ionization. DFT calculations also indicate that electrons removed from nucleotides under these same conditions are associated with orbitals involved with the nucleobase-saccharide linkage electron density. The calculations give a general mechanism and explanation of the experimental results.

  19. First-principles study of the structural, electronic, and optical properties of Ga2O3 in its monoclinic and hexagonal phases

    E-Print Network [OSTI]

    Pandey, Ravi

    electrodes for flat panel displays and solar cells, and phase shift masks for laser lithography. Ga2O3 has

  20. Development of extreme ultraviolet and soft x-ray multilayer optics for scientific studies with femtosecond/attosecond sources

    SciTech Connect (OSTI)

    Aquila, Andrew Lee

    2009-05-21T23:59:59.000Z

    The development of multilayer optics for extreme ultraviolet (EUV) radiation has led to advancements in many areas of science and technology, including materials studies, EUV lithography, water window microscopy, plasma imaging, and orbiting solar physics imaging. Recent developments in femtosecond and attosecond EUV pulse generation from sources such as high harmonic generation lasers, combined with the elemental and chemical specificity provided by EUV radiation, are opening new opportunities to study fundamental dynamic processes in materials. Critical to these efforts is the design and fabrication of multilayer optics to transport, focus, shape and image these ultra-fast pulses This thesis describes the design, fabrication, characterization, and application of multilayer optics for EUV femtosecond and attosecond scientific studies. Multilayer mirrors for bandwidth control, pulse shaping and compression, tri-material multilayers, and multilayers for polarization control are described. Characterization of multilayer optics, including measurement of material optical constants, reflectivity of multilayer mirrors, and metrology of reflected phases of the multilayer, which is critical to maintaining pulse size and shape, were performed. Two applications of these multilayer mirrors are detailed in the thesis. In the first application, broad bandwidth multilayers were used to characterize and measure sub-100 attosecond pulses from a high harmonic generation source and was performed in collaboration with the Max-Planck institute for Quantum Optics and Ludwig- Maximilians University in Garching, Germany, with Professors Krausz and Kleineberg. In the second application, multilayer mirrors with polarization control are useful to study femtosecond spin dynamics in an ongoing collaboration with the T-REX group of Professor Parmigiani at Elettra in Trieste, Italy. As new ultrafast x-ray sources become available, for example free electron lasers, the multilayer designs described in this thesis can be extended to higher photon energies, and such designs can be used with those sources to enable new scientific studies, such as molecular bonding, phonon, and spin dynamics.

  1. Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns

    DOE Patents [OSTI]

    Hau-Riege, Stefan Peter (Fremont, CA)

    2007-05-01T23:59:59.000Z

    The invention applies techniques for image reconstruction from X-ray diffraction patterns on the three-dimensional imaging of defects in EUVL multilayer films. The reconstructed image gives information about the out-of-plane position and the diffraction strength of the defect. The positional information can be used to select the correct defect repair technique. This invention enables the fabrication of defect-free (since repaired) X-ray Mo--Si multilayer mirrors. Repairing Mo--Si multilayer-film defects on mask blanks is a key for the commercial success of EUVL. It is known that particles are added to the Mo--Si multilayer film during the fabrication process. There is a large effort to reduce this contamination, but results are not sufficient, and defects continue to be a major mask yield limiter. All suggested repair strategies need to know the out-of-plane position of the defects in the multilayer.

  2. New Educational Software for Teaching the Sunpath Diagram and Shading Mask Protractor

    E-Print Network [OSTI]

    Oh, J.; Haberl, J. S.

    .E. Energy Systems Laboratory, Department of Architecture, Texas A&M University, College Station, Texas ABSTRACT The well-known versions of the sunpath diagrams that appear in the AIA's Architectural Graphics Standards are based on the equidistant sky dome... projections and use a shading mask protractor developed by Olgyay and Olgyay at Princeton University in the 1950s. A designer using the AIA's Graphics Standards book, or other printed versions of the sunpath diagram, must select the nearest latitude, make...

  3. Computer-aided engineering system for design of sequence arrays and lithographic masks

    DOE Patents [OSTI]

    Hubbell, E.A.; Morris, M.S.; Winkler, J.L.

    1999-01-05T23:59:59.000Z

    An improved set of computer tools for forming arrays is disclosed. According to one aspect of the invention, a computer system is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files to design and/or generate lithographic masks. 14 figs.

  4. Computer-aided engineering system for design of sequence arrays and lithographic masks

    DOE Patents [OSTI]

    Hubbell, E.A.; Lipshutz, R.J.; Morris, M.S.; Winkler, J.L.

    1997-01-14T23:59:59.000Z

    An improved set of computer tools for forming arrays is disclosed. According to one aspect of the invention, a computer system is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files to design and/or generate lithographic masks. 14 figs.

  5. Computer-aided engineering system for design of sequence arrays and lithographic masks

    DOE Patents [OSTI]

    Hubbell, E.A.; Morris, M.S.; Winkler, J.L.

    1996-11-05T23:59:59.000Z

    An improved set of computer tools for forming arrays is disclosed. According to one aspect of the invention, a computer system is used to select probes and design the layout of an array of DNA or other polymers with certain beneficial characteristics. According to another aspect of the invention, a computer system uses chip design files to design and/or generate lithographic masks. 14 figs.

  6. Reflective optical imaging system with balanced distortion

    DOE Patents [OSTI]

    Chapman, Henry N. (Sunol, CA); Hudyma, Russell M. (San Ramon, CA); Shafer, David R. (Fairfield, CT); Sweeney, Donald W. (San Ramon, CA)

    1999-01-01T23:59:59.000Z

    An optical system compatible with short wavelength (extreme ultraviolet) An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four reflective elements for projecting a mask image onto a substrate. The four optical elements comprise, in order from object to image, convex, concave, convex and concave mirrors. The optical system is particularly suited for step and scan lithography methods. The invention enables the use of larger slit dimensions associated with ring field scanning optics, improves wafer throughput and allows higher semiconductor device density. The inventive optical system is characterized by reduced dynamic distortion because the static distortion is balanced across the slit width.

  7. Measurement and analysis of near ultraviolet solar radiation

    SciTech Connect (OSTI)

    Mehos, M.S.; Pacheco, K.A.; Link, H.F.

    1991-12-01T23:59:59.000Z

    The photocatalytic detoxification of organic contaminants is currently being investigated by a number of laboratories, universities, and institutions throughout the world. The photocatalytic oxidation process requires that contaminants come in contact with a photocatalyst such as titanium dioxide, under illumination of ultraviolet (UV) radiation in order for the decomposition reaction to take place. Researches from the National Renewable Energy Laboratory (NREL) and Sandia National Laboratories are currently investigating the use of solar energy as a means of driving this photocatalytic process. Measurements of direct-normal and global-horizontal ultraviolet (280--385 nm) and full-spectrum (280--4000 nm) solar radiation taken in Golden, Colorado over a one-year period are analyzed, and comparisons are made with data generated from a clear-sky solar radiation model (BRITE) currently in use for predicting the performance of solar detoxification processes. Analysis of the data indicates a ratio of global-horizontal ultraviolet to full-spectrum radiation of 4%--6% that is weakly dependent on air mass. Conversely, data for direct-normal ultraviolet radiation indicate a much large dependence on air mass, with a ratio of approximately 5% at low air mass to 1% at higher at masses. Results show excellent agreement between the measured data and clear-sky predictions for both the ultraviolet and the full-spectrum global-horizontal radiation. For the direct-normal components, however, the tendency is for the clear-sky model to underpredict the measured that. Averaged monthly ultraviolet radiation available for the detoxification process indicates that the global-horizontal component of the radiation exceeds the direct-normal component throughout the year. 9 refs., 7 figs.

  8. On-board Measurement of NO and NO2 using Non-dispersive Ultraviolet...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    board Measurement of NO and NO2 using Non-dispersive Ultraviolet (NDUV) Spectroscopy On-board Measurement of NO and NO2 using Non-dispersive Ultraviolet (NDUV) Spectroscopy...

  9. Electron and proton aurora observed spectroscopically in the far ultraviolet

    E-Print Network [OSTI]

    Lummerzheim, Dirk

    Electron and proton aurora observed spectroscopically in the far ultraviolet M. Galand,1 D the location of the electron and proton aurorae is discussed. The estimation of the particle characteristics aurora. Because protons and electrons do not interact in the same way with the atmosphere, our study

  10. Time resolved ultraviolet absorption spectroscopy of pulsed fluorocarbon plasmas

    E-Print Network [OSTI]

    Gleason, Karen K.

    Time resolved ultraviolet absorption spectroscopy of pulsed fluorocarbon plasmas Brett A. Cruden.1063/1.1334936 I. INTRODUCTION The study of fluorocarbon plasmas is of great interest for their applications in silicon dioxide etching.1,2 Recently, at- tention has been paid to using fluorocarbon plasmas to pro- duce

  11. UV nanoimprint lithography for the realization of large-area ordered SiGe/Si(001) island arrays

    SciTech Connect (OSTI)

    Lausecker, E.; Brehm, M.; Grydlik, M.; Hackl, F.; Fromherz, T.; Schaeffler, F.; Bauer, G. [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, 4040 Linz (Austria); Bergmair, I.; Muehlberger, M. [Functional Surfaces and Nanostructures, Profactor GmbH, 4407 Steyr-Gleink (Austria)

    2011-04-04T23:59:59.000Z

    We use UV nanoimprint lithography for the pit-patterning of silicon substrates. Ordered silicon-germanium islands are grown inside these pits by molecular-beam epitaxy on arrays of 3x3 mm{sup 2} and characterized by atomic force microscopy (AFM) and photoluminescence (PL) measurements. AFM-based statistics reveals an extremely uniform size distribution of the islands in the patterned areas. These results are confirmed by very narrow and uniform PL peaks recorded at various positions across the patterned arrays.

  12. Wavelet-Smoothed Interpolation of Masked Scientific Data for JPEG 2000 Compression

    SciTech Connect (OSTI)

    Brislawn, Christopher M. [Los Alamos National Laboratory

    2012-08-13T23:59:59.000Z

    How should we manage scientific data with 'holes'? Some applications, like JPEG 2000, expect logically rectangular data, but some sources, like the Parallel Ocean Program (POP), generate data that isn't defined on certain subsets. We refer to grid points that lack well-defined, scientifically meaningful sample values as 'masked' samples. Wavelet-smoothing is a highly scalable interpolation scheme for regions with complex boundaries on logically rectangular grids. Computation is based on forward/inverse discrete wavelet transforms, so runtime complexity and memory scale linearly with respect to sample count. Efficient state-of-the-art minimal realizations yield small constants (O(10)) for arithmetic complexity scaling, and in-situ implementation techniques make optimal use of memory. Implementation in two dimensions using tensor product filter banks is straighsorward and should generalize routinely to higher dimensions. No hand-tuning required when the interpolation mask changes, making the method aeractive for problems with time-varying masks. Well-suited for interpolating undefined samples prior to JPEG 2000 encoding. The method outperforms global mean interpolation, as judged by both SNR rate-distortion performance and low-rate artifact mitigation, for data distributions whose histograms do not take the form of sharply peaked, symmetric, unimodal probability density functions. These performance advantages can hold even for data whose distribution differs only moderately from the peaked unimodal case, as demonstrated by POP salinity data. The interpolation method is very general and is not tied to any particular class of applications, could be used for more generic smooth interpolation.

  13. Ultraviolet-B Radiation Harms Aquatic Life -Current Results http://www.currentresults.com/Water/Water-Pollution/ultraviolet.php 1 of 2 8/7/2007 1:45 PM

    E-Print Network [OSTI]

    Blaustein, Andrew R.

    Ultraviolet-B Radiation Harms Aquatic Life - Current Results http://www.currentresults.com/Water/Water-Pollution/ultraviolet.php 1 of 2 8/7/2007 1:45 PM Ultraviolet-B Radiation Harms Aquatic Life The first quantitative analysis of published studies on ultraviolet-B (UVB) radiation and water-borne life reveals that UVB causes widespread

  14. Patterned graphene functionalization via mask-free scanning of micro-plasma jet under ambient condition

    SciTech Connect (OSTI)

    Ye, Dong; Yu, Yao, E-mail: ensiyu@mail.hust.edu.cn; Liu, Lin [School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074 Wuhan (China)] [School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074 Wuhan (China); Wu, Shu-Qun; Lu, Xin-Pei [State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, 430074 Wuhan (China)] [State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, 430074 Wuhan (China); Wu, Yue [Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3255 (United States)] [Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3255 (United States)

    2014-03-10T23:59:59.000Z

    In this work, a mask-free method is introduced for patterned nitrogen doping of graphene using a micro-plasma jet under ambient condition. Raman and X-ray photoelectron spectroscopy spectra indicate that nitrogen atoms are incorporated into the graphene lattice with the two-dimensional spatial distribution precisely controlled in the range of mm down to 10??m. Since the chemistry of the micro-plasma jet can be controlled by the choice of the gas mixture, this direct writing process with micro-plasma jet can be a versatile approach for patterned functionalization of graphene with high spatial resolution. This could have promising applications in graphene-based electronics.

  15. A CLOSE COMPANION SEARCH AROUND L DWARFS USING APERTURE MASKING INTERFEROMETRY AND PALOMAR LASER GUIDE STAR ADAPTIVE OPTICS

    SciTech Connect (OSTI)

    Bernat, David [Department of Astronomy, Cornell University, Ithaca, NY 14853 (United States); Bouchez, Antonin H.; Cromer, John L.; Dekany, Richard G.; Moore, Anna M. [California Institute of Technology, Pasadena, CA 91125 (United States); Ireland, Michael; Tuthill, Peter [Sydney Institute for Astrophysics, School of Physics, University of Sydney (Australia); Martinache, Frantz [National Astronomical Observatory of Japan, Subaru Telescope, Hilo, HI 96720 (United States); Angione, John; Burruss, Rick S.; Guiwits, Stephen R.; Henning, John R.; Hickey, Jeff; Kibblewhite, Edward; McKenna, Daniel L.; Petrie, Harold L.; Roberts, Jennifer; Shelton, J. Chris; Thicksten, Robert P.; Trinh, Thang [Palomar Laser Guide Star Adaptive Optics Team, Palomar Observatory, California Institute of Technology, Palomar Mountain, CA 92060 (United States)

    2010-06-01T23:59:59.000Z

    We present a close companion search around 16 known early L dwarfs using aperture masking interferometry with Palomar laser guide star adaptive optics (LGS AO). The use of aperture masking allows the detection of close binaries, corresponding to projected physical separations of 0.6-10.0 AU for the targets of our survey. This survey achieved median contrast limits of {Delta}K {approx} 2.3 for separations between 1.2 {lambda}/D-4{lambda}/D and {Delta}K {approx} 1.4 at 2/3 {lambda}/D. We present four candidate binaries detected with moderate-to-high confidence (90%-98%). Two have projected physical separations less than 1.5 AU. This may indicate that tight-separation binaries contribute more significantly to the binary fraction than currently assumed, consistent with spectroscopic and photometric overluminosity studies. Ten targets of this survey have previously been observed with the Hubble Space Telescope as part of companion searches. We use the increased resolution of aperture masking to search for close or dim companions that would be obscured by full aperture imaging, finding two candidate binaries. This survey is the first application of aperture masking with LGS AO at Palomar. Several new techniques for the analysis of aperture masking data in the low signal-to-noise regime are explored.

  16. Science & Technology Review September/October 2008

    SciTech Connect (OSTI)

    Bearinger, J P

    2008-07-21T23:59:59.000Z

    This issue has the following articles: (1) Answering Scientists Most Audacious Questions--Commentary by Dona Crawford; (2) Testing the Accuracy of the Supernova Yardstick--High-resolution simulations are advancing understanding of Type Ia supernovae to help uncover the mysteries of dark energy; (3) Developing New Drugs and Personalized Medical Treatment--Accelerator mass spectrometry is emerging as an essential tool for assessing the effects of drugs in humans; (4) Triage in a Patch--A painless skin patch and accompanying detector can quickly indicate human exposure to biological pathogens, chemicals, explosives, or radiation; and (5) Smoothing Out Defects for Extreme Ultraviolet Lithography--A process for smoothing mask defects helps move extreme ultraviolet lithography one step closer to creating smaller, more powerful computer chips.

  17. Single-crystalline aluminum film for ultraviolet plasmonic nanolasers

    E-Print Network [OSTI]

    Chou, Bo-Tsun; Wu, Yen-Mo; Chung, Yi-Chen; Hsueh, Wei-Jen; Lin, Shih-Wei; Lu, Tien-Chang; Lin, Tzy-Rong; Lin, Sheng-Di

    2015-01-01T23:59:59.000Z

    Plasmonic devices have advanced significantly in the past decade. Being one of the most intriguing devices, plamonic nanolasers plays an important role in biomedicine, chemical sensor, information technology, and optical integrated circuits. However, nanoscale plasmonic devices, particularly in ultraviolet regime, are extremely sensitive to metal and interface quality, which renders the development of ultraviolet plasmonics. Here, by addressing the material issues, we demonstrate a low threshold, high characteristic temperature metal-oxide-semiconductor ZnO nanolaser working at room temperature. The template for ZnO nanowires consists of a flat single-crystalline aluminum film grown by molecular beam epitaxy and an ultra-smooth Al2O3 spacer layer prepared by atomic layer deposition. By effectively reducing surface plasmon scattering loss and metal intrinsic absorption loss, the high-quality metal film and sharp interfaces between layers boost the device performance. Our work paves the way for future applicati...

  18. Ice-assisted electron beam lithography of graphene This article has been downloaded from IOPscience. Please scroll down to see the full text article.

    E-Print Network [OSTI]

    Ice-assisted electron beam lithography of graphene This article has been downloaded from IOPscience PUBLISHING NANOTECHNOLOGY Nanotechnology 23 (2012) 185302 (6pp) doi:10.1088/0957-4484/23/18/185302 Ice demonstrate that a low energy focused electron beam can locally pattern graphene coated with a thin ice layer

  19. Sub-50 nm high aspect-ratio silicon pillars, ridges, and trenches fabricated using ultrahigh resolution electron beam lithography and reactive ion

    E-Print Network [OSTI]

    resolution electron beam lithography and reactive ion etching P. B. Fischer and S. Y. Chou University of Minnesota Department of Electrical Engineering, Minneapolis, Minnesota 554~3 (Received 29 July 1992 and chlorine based reactive ion etching. These nanoscale Si features can be further reduced to 10 nm using

  20. Nanopatterning of Si/SiGe Two-dimensional Hole Gases by PFOTS-aided AFM Lithography of Carrier Supply Layer

    E-Print Network [OSTI]

    Nanopatterning of Si/SiGe Two-dimensional Hole Gases by PFOTS-aided AFM Lithography of Carrier The nanopatterning of Si/SiGe layers by PFOTS (perfluorooctyl trichlorosilane) -aided AFM (atomic force microscopy and then transfer patterns in to underlying SiGe layers by a two-step selective wet etching. Minimum linewidths

  1. Fabrication of Sub-10-nm Silicon Nanowire Arrays by Size Reduction Lithography Yang-Kyu Choi, Ji Zhu,, Jeff Grunes,, Jeffrey Bokor, and Gabor. A. Somorjai*,,

    E-Print Network [OSTI]

    Bokor, Jeffrey

    systems. Introduction The fabrication of nanoscale patterns with dimensions of 10 nm or less has been and space dimensions" from polysilicon (polycrystalline silicon) and a metal oxide by etching one et al. carried out what they called "spacer lithography" to produce electronic devices in silicon

  2. Inorganic volumetric light source excited by ultraviolet light

    DOE Patents [OSTI]

    Reed, S.; Walko, R.J.; Ashley, C.S.; Brinker, C.J.

    1994-04-26T23:59:59.000Z

    The invention relates to a composition for the volumetric generation of radiation. The composition comprises a porous substrate loaded with a component capable of emitting radiation upon interaction with an exciting radiation. Preferably, the composition is an aerogel substrate loaded with a component, e.g., a phosphor, capable of interacting with exciting radiation of a first energy, e.g., ultraviolet light, to produce radiation of a second energy, e.g., visible light. 4 figures.

  3. Durable Corrosion and Ultraviolet-Resistant Silver Mirror

    DOE Patents [OSTI]

    Jorgensen, G. J.; Gee, R.

    2006-01-24T23:59:59.000Z

    A corrosion and ultra violet-resistant silver mirror for use in solar reflectors; the silver layer having a film-forming protective polymer bonded thereto, and a protective shield overlay comprising a transparent multipolymer film that incorporates a UV absorber. The corrosion and ultraviolet resistant silver mirror retains spectral hemispherical reflectance and high optical clarity throughout the UV and visible spectrum when used in solar reflectors.

  4. Magnetic fluorescent lamp having reduced ultraviolet self-absorption

    DOE Patents [OSTI]

    Berman, Samuel M. (San Francisco, CA); Richardson, Robert W. (Pelham, NY)

    1985-01-01T23:59:59.000Z

    The radiant emission of a mercury-argon discharge in a fluorescent lamp assembly (10) is enhanced by providing means (30) for establishing a magnetic field with lines of force along the path of electron flow through the bulb (12) of the lamp assembly, to provide Zeeman splitting of the ultraviolet spectral line. Optimum results are obtained when the magnetic field strength causes a Zeeman splitting of approximately 1.7 times the thermal line width.

  5. A high galactic latitude survey of far ultraviolet excess objects

    SciTech Connect (OSTI)

    Bixler, J.V.

    1988-01-01T23:59:59.000Z

    Two closely related efforts in astrophysical instrumentation and observation are described with the objective of performing a high galactic latitude survey of faint objects in the far ultraviolet. The avenues of research possible with data obtained from space based ultraviolet surveys are discussed and a summary of past, present and planned instruments capable of such survey work presented. The Faust telescope, an eight degree field of view imaging instrument with peak sensitivity at 1700A, designed for survey work is described. An imaging, active readout detector and associated ground support equipment were designed, constructed, and calibrated to replace the original photographic detector. The present state of observational data relevant to determining the atmospheric parameters of subdwarf B and O stars, and their mid-Galactic plane density and scale height was reviewed. Theoretical explanations of their evolutionary status were proposed. The optical observations and spectral reductions performed on objects included in a catalog of far ultraviolet bright, high galactic latitude objects are described. These observations provide a sample of subdwarf O and B stars free of brightness and temperature selection effects. A model atmospheres analysis was performed on the subdwarf sample to determine the temperature, gravity and helium to hydrogen ratio of the individual objects. The results show a smooth distribution of objects on the gravity versus temperature diagram near the theoretical location of the extended horizontal branch.

  6. A Super-high Angular Resolution Principle for Coded-mask X-ray Imaging Beyond the Diffraction Limit of Single Pinhole

    E-Print Network [OSTI]

    Chen Zhang; Shuang Nan Zhang

    2008-06-25T23:59:59.000Z

    High angular resolution X-ray imaging is always demanded by astrophysics and solar physics, which can be realized by coded-mask imaging with very long mask-detector distance in principle. Previously the diffraction-interference effect has been thought to degrade coded-mask imaging performance dramatically at low energy end with very long mask-detector distance. In this work the diffraction-interference effect is described with numerical calculations, and the diffraction-interference cross correlation reconstruction method (DICC) is developed in order to overcome the imaging performance degradation. Based on the DICC, a super-high angular resolution principle (SHARP) for coded-mask X-ray imaging is proposed. The feasibility of coded mask imaging beyond the diffraction limit of single pinhole is demonstrated with simulations. With the specification that the mask element size of 50* 50 square micrometers and the mask-detector distance of 50 m, the achieved angular resolution is 0.32 arcsec above about 10 keV, and 0.36 arcsec at 1.24 keV where diffraction can not be neglected. The on-axis source location accuracy is better than 0.02 arcsec. Potential applications for solar observations and wide-field X-ray monitors are also shortly discussed.

  7. Pattern Recognition Pergamon Press 1973. Vol. 5, pp. 199-211. Printed in Great Britain The "Rubber-Mask" Technique II.

    E-Print Network [OSTI]

    Widrow, Bernard

    Pattern Recognition Pergamon Press 1973. Vol. 5, pp. 199-211. Printed in Great Britain The "Rubber to date, and relates the rubber mask technique to previous work. A scheme for incorporating flexible by flexible matching, is also presented. Flexible templates Rubber masks Pattern recognition and memory system

  8. Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks: A method to map the free-carrier

    E-Print Network [OSTI]

    Nabben, Reinhard

    Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten properties of two epitaxial-laterally overgrown GaN structures with tungsten masks in 1100 and 1120 direction by tungsten masks3 to prevent the in-diffusion of silicon and oxygen atoms in the overgrown GaN, which

  9. 714 IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 38, NO. 4, APRIL 2010 Interaction of a CO2 Laser Pulse With Tin-Based

    E-Print Network [OSTI]

    Najmabadi, Farrokh

    Pulse With Tin-Based Plasma for an Extreme Ultraviolet Lithography Source Yezheng Tao, Mark S. Tillack

  10. Exceptional service in the national interest www.sandia.gov

    E-Print Network [OSTI]

    of the Extreme Ultraviolet Lithography (EUVL) Program and an industry-funded $300 million, three-lab CRADA

  11. FEATURE ENHANCEMENT USING SPARSE REFERENCE AND ESTIMATED SOFT-MASK EXEMPLAR-PAIRS FOR NOISY SPEECH RECOGNITION

    E-Print Network [OSTI]

    Alwan, Abeer

    FEATURE ENHANCEMENT USING SPARSE REFERENCE AND ESTIMATED SOFT-MASK EXEMPLAR-PAIRS FOR NOISY SPEECH-robust speech recogni- tion is proposed. Existing sparse exemplar-based feature enhance- ment methods use clean speech recognition [14]. More recently in [13], another feature enhancement scheme is pro

  12. ON THE OPTIMALITY OF IDEAL BINARY TIME-FREQUENCY MASKS Yipeng Li and DeLiang Wang

    E-Print Network [OSTI]

    Wang, DeLiang "Leon"

    of Computer Science and Engineering The Ohio State University {liyip, dwang}@cse.ohio-state.edu ABSTRACT also experimentally compare the performance of ideal binary masks in terms of signal-to-noise ratio separation, Wiener filter 1. INTRODUCTION The human auditory system has the ability to segregate an acoustic

  13. Analysis of Mask-Based Nanowire Decoders Eric Rachlin, Student Member, IEEE, and John E. Savage, Life Fellow, IEEE

    E-Print Network [OSTI]

    Savage, John

    is controlling parallel sets of nanowires (NWs), such as those in crossbars, using a moderate number of mesoscale wires. Three similar methods have been proposed to control NWs using a set of perpendicular mesoscale between NWs and mesoscale wires, and the third, a mask-based approach, interposes high-K dielectric

  14. A HIGH ASPECT RATIO, FLEXIBLE, TRANSPARENT AND LOW-COST PARYLENE-C SHADOW MASK TECHNOLOGY FOR MICROPATTERNING APPLICATIONS

    E-Print Network [OSTI]

    Dokmeci, Mehmet

    this shadow mask, we successfully patterned proteins and cells on various surfaces (glass, PDMS, methacrylate) up to 9 times. This technology has potential applications for patterning proteins, cells and organic steps, and lack the precise pattern definition and flexibility to create patterns with varying length

  15. Good Halftone Masks via Genetic Algorithms Peter G. Anderson, Jonathan S. Arney, Samuel A. Inverso, Daniel R. Kunkle,

    E-Print Network [OSTI]

    Anderson, Peter G.

    of relatively poor individuals to keep the popula- tion size constant. It mutates then evaluates the new individuals. This process terminates after a predetermined time or when a satisfactory individual appears. GAs figure of merit ex- presses how well a mask renders a constant gray image--from the point of view

  16. High aspect ratio x-ray waveguide channels fabricated by e-beam lithography and wafer bonding

    SciTech Connect (OSTI)

    Neubauer, H.; Hoffmann, S.; Kanbach, M.; Haber, J.; Kalbfleisch, S.; Krüger, S. P.; Salditt, T., E-mail: tsaldit@gwdg.de [Institut für Röntgenphysik, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany)

    2014-06-07T23:59:59.000Z

    We report on the fabrication and characterization of hard x-ray waveguide channels manufactured by e-beam lithography, reactive ion etching and wafer bonding. The guiding layer consists of air or vacuum and the cladding material of silicon, which is favorable in view of minimizing absorption losses. The specifications for waveguide channels which have to be met in the hard x-ray range to achieve a suitable beam confinement in two orthogonal directions are extremely demanding. First, high aspect ratios up to 10{sup 6} have to be achieved between lateral structure size and length of the guides. Second, the channels have to be deeply embedded in material to warrant the guiding of the desired modes while absorbing all other (radiative) modes in the cladding material. We give a detailed report on device fabrication with the respective protocols and parameter optimization, the inspection and the optical characterization.

  17. A NEW ALGORITHM FOR RADIOISOTOPE IDENTIFICATION OF SHIELDED AND MASKED SNM/RDD MATERIALS

    SciTech Connect (OSTI)

    Jeffcoat, R.

    2012-06-05T23:59:59.000Z

    Detection and identification of shielded and masked nuclear materials is crucial to national security, but vast borders and high volumes of traffic impose stringent requirements for practical detection systems. Such tools must be be mobile, and hence low power, provide a low false alarm rate, and be sufficiently robust to be operable by non-technical personnel. Currently fielded systems have not achieved all of these requirements simultaneously. Transport modeling such as that done in GADRAS is able to predict observed spectra to a high degree of fidelity; our research is focusing on a radionuclide identification algorithm that inverts this modeling within the constraints imposed by a handheld device. Key components of this work include incorporation of uncertainty as a function of both the background radiation estimate and the hypothesized sources, dimensionality reduction, and nonnegative matrix factorization. We have partially evaluated performance of our algorithm on a third-party data collection made with two different sodium iodide detection devices. Initial results indicate, with caveats, that our algorithm performs as good as or better than the on-board identification algorithms. The system developed was based on a probabilistic approach with an improved approach to variance modeling relative to past work. This system was chosen based on technical innovation and system performance over algorithms developed at two competing research institutions. One key outcome of this probabilistic approach was the development of an intuitive measure of confidence which was indeed useful enough that a classification algorithm was developed based around alarming on high confidence targets. This paper will present and discuss results of this novel approach to accurately identifying shielded or masked radioisotopes with radiation detection systems.

  18. Gamma Ray Burst Constraints on Ultraviolet Lorentz Invariance Violation

    E-Print Network [OSTI]

    Tina Kahniashvili; Grigol Gogoberidze; Bharat Ratra

    2006-10-20T23:59:59.000Z

    We present a unified general formalism for ultraviolet Lorentz invariance violation (LV) testing through electromagnetic wave propagation, based on both dispersion and rotation measure data. This allows for a direct comparison of the efficacy of different data to constrain LV. As an example we study the signature of LV on the rotation of the polarization plane of $\\gamma$-rays from gamma ray bursts in a LV model. Here $\\gamma$-ray polarization data can provide a strong constraint on LV, 13 orders of magnitude more restrictive than a potential constraint from the rotation of the cosmic microwave background polarization proposed by Gamboa, L\\'{o}pez-Sarri\\'{o}n, and Polychronakos (2006).

  19. Broadband extreme ultraviolet probing of transient gratings in vanadium dioxide

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sistrunk, Emily; Grilj, Jakob; Jeong, Jaewoo; Samant, Mahesh G.; Gray, Alexander X.; Dürr, Hermann A.; Parkin, Stuart S. P.; Gühr, Markus

    2015-01-01T23:59:59.000Z

    Nonlinear spectroscopy in the extreme ultraviolet (EUV) and soft x-ray spectral range offers the opportunity for element selective probing of ultrafast dynamics using core-valence transitions (Mukamel et al., Acc. Chem. Res. 42, 553 (2009)). We demonstrate a step on this path showing core-valence sensitivity in transient grating spectroscopy with EUV probing. We study the optically induced insulator-to-metal transition (IMT) of a VO? film with EUV diffraction from the optically excited sample. The VO? exhibits a change in the 3p-3d resonance of V accompanied by an acoustic response. Due to the broadband probing we are able to separate the two features.

  20. The ultraviolet spectra of SO?¹? and SO?¹? near 2300 A 

    E-Print Network [OSTI]

    Kim, Sang Uk

    1966-01-01T23:59:59.000Z

    22 10 Isotope Shift of Bands in the 2300 S02 ~ 13 Vapor Pressure Curve of SO Correction Curve. A System of 24 33 INTRODUCTION SO has three absorption regions in the ultraviolet portion of its spectrum. They are located at 5900 ? 5400 A.... The emission spectrum lines of the iron arc were used as a 14 TABLE I CORRESPONDING PRESSURES AT DIFFERENT TEMPERATURES PLATL' NUMBER 3 Spectrograms Temperatures -100 C - 85'c - 70'0 - 65'c 50 C Pressures 22 mm 33 mm 43 mm 73 15 standard...

  1. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18T23:59:59.000Z

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  2. Large area, surface discharge pumped, vacuum ultraviolet light source

    DOE Patents [OSTI]

    Sze, Robert C. (Santa Fe, NM); Quigley, Gerard P. (Los Alamos, NM)

    1996-01-01T23:59:59.000Z

    Large area, surface discharge pumped, vacuum ultraviolet (VUV) light source. A contamination-free VUV light source having a 225 cm.sup.2 emission area in the 240-340 nm region of the electromagnetic spectrum with an average output power in this band of about 2 J/cm.sup.2 at a wall-plug efficiency of approximately 5% is described. Only ceramics and metal parts are employed in this surface discharge source. Because of the contamination-free, high photon energy and flux, and short pulse characteristics of the source, it is suitable for semiconductor and flat panel display material processing.

  3. Large area, surface discharge pumped, vacuum ultraviolet light source

    DOE Patents [OSTI]

    Sze, R.C.; Quigley, G.P.

    1996-12-17T23:59:59.000Z

    Large area, surface discharge pumped, vacuum ultraviolet (VUV) light source is disclosed. A contamination-free VUV light source having a 225 cm{sup 2} emission area in the 240-340 nm region of the electromagnetic spectrum with an average output power in this band of about 2 J/cm{sup 2} at a wall-plug efficiency of approximately 5% is described. Only ceramics and metal parts are employed in this surface discharge source. Because of the contamination-free, high photon energy and flux, and short pulse characteristics of the source, it is suitable for semiconductor and flat panel display material processing. 3 figs.

  4. The ultraviolet spectra of SO?¹? and SO?¹? near 2300 A

    E-Print Network [OSTI]

    Kim, Sang Uk

    1966-01-01T23:59:59.000Z

    22 10 Isotope Shift of Bands in the 2300 S02 ~ 13 Vapor Pressure Curve of SO Correction Curve. A System of 24 33 INTRODUCTION SO has three absorption regions in the ultraviolet portion of its spectrum. They are located at 5900 ? 5400 A.... The emission spectrum lines of the iron arc were used as a 14 TABLE I CORRESPONDING PRESSURES AT DIFFERENT TEMPERATURES PLATL' NUMBER 3 Spectrograms Temperatures -100 C - 85'c - 70'0 - 65'c 50 C Pressures 22 mm 33 mm 43 mm 73 15 standard...

  5. Extreme Ultra-Violet Spectroscopy of the Flaring Solar Chromosphere

    E-Print Network [OSTI]

    Milligan, Ryan O

    2015-01-01T23:59:59.000Z

    The extreme ultraviolet portion of the solar spectrum contains a wealth of diagnostic tools for probing the lower solar atmosphere in response to an injection of energy, particularly during the impulsive phase of solar flares. These include temperature and density sensitive line ratios, Doppler shifted emission lines and nonthermal broadening, abundance measurements, differential emission measure profiles, and continuum temperatures and energetics, among others. In this paper I shall review some of the advances made in recent years using these techniques, focusing primarily on studies that have utilized data from Hinode/EIS and SDO/EVE, while also providing some historical background and a summary of future spectroscopic instrumentation.

  6. Ultraviolet Absorber UV-770 Market | OpenEI Community

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlin Baxin HydropowerTrinityTurnbullGlobalUbbinkUkrainianUltraviolet

  7. Ultraviolet radiation in the southern seas in early spring 1993

    SciTech Connect (OSTI)

    Wendler, G.; Quakenbush, T. [Univ. of Alaska, Fairbanks, AK (United States)

    1994-12-31T23:59:59.000Z

    The National Science Foundation research vessel Nathaniel B. Palmer carried out a cruise to Antarctica in early spring of 1993. It left Punta Arenas, Chile, close to the tip of South America on 11 August 1993. sailed south for 3 days to the tip of The Antarctic Peninsula, stopping at O`Higgens and Palmer Stations, and from there went southwest and into the Bellingshausen sea. On 10 September, it reached the most southerly position, 71{degrees}S, some distance north of the Thurston Island. From there, it went as far as 110{degrees}W before returning to Punta Arenas. The main purpose of the cruise was to investigate the snow- and sea-ice thickness, properties, and structures in this part of the southern oceans. It also allowed us to carry out continuous radiation measurements. We measured the following fluxes: global radiation (Eppley PSP), infrared incoming radiation (Eppley Pyrgeometer PIR), ultraviolet-A radiation (Eppley UV meter), ultraviolet-B radiation (Yankee Environmental Systems), and pitch and roll of the ship (Lucas Sensing Systems, Inc.). All instruments were sampled twice per second (Campbell Scientific, Model 21 X), and a notebook computer (ASI Patriot) stored 1-minute averages of the radiation data and 1-minute standard deviation of the ship`s pitch and roll. Visual observations of cloud cover were also recorded. 2 refs., 3 figs.

  8. Ultraviolet Free Electron Laser Facility preliminary design report

    SciTech Connect (OSTI)

    Ben-Zvi, I. [ed.

    1993-02-01T23:59:59.000Z

    This document, the Preliminary Design Report (PDR) for the Brookhaven Ultraviolet Free Electron Laser (UV FEL) facility, describes all the elements of a facility proposed to meet the needs of a research community which requires ultraviolet sources not currently available as laboratory based lasers. Further, for these experiments, the requisite properties are not extant in either the existing second or upcoming third generation synchrotron light sources. This document is the result of our effort at BNL to identify potential users, determine the requirements of their experiments, and to design a facility which can not only satisfy the existing need, but have adequate flexibility for possible future extensions as need dictates and as evolving technology allows. The PDR is comprised of three volumes. In this, the first volume, background for the development of the proposal is given, including descriptions of the UV FEL facility, and representative examples of the science it was designed to perform. Discussion of the limitations and potential directions for growth are also included. A detailed description of the facility design is then provided, which addresses the accelerator, optical, and experimental systems. Information regarding the conventional construction for the facility is contained in an addendum to volume one (IA).

  9. Ambient Levels of Ultraviolet-B Radiation Cause Mortality in Juvenile Western Toads, Bufo boreas

    E-Print Network [OSTI]

    Blaustein, Andrew R.

    Ambient Levels of Ultraviolet-B Radiation Cause Mortality in Juvenile Western Toads, Bufo boreas industrial gases contribute to the depletion of the earth's protective ozone layer, resulting in increased amounts of cell damaging ultraviolet-B (UV-B) radiation reaching the surface of the earth. Recent

  10. Author's personal copy Effects of ultraviolet radiation on an intertidal trematode parasite: An assessment

    E-Print Network [OSTI]

    Poulin, Robert

    Author's personal copy Effects of ultraviolet radiation on an intertidal trematode parasite: An assessment of damage and protection A. Studer a, , V.M. Cubillos b,c , M.D. Lamare c , R. Poulin a , D ecosystems which experience high levels of ultraviolet radiation. Although these parasites mostly live within

  11. Table top nanopatterning with extreme ultraviolet laser illumination M.G. Capeluto c

    E-Print Network [OSTI]

    Rocca, Jorge J.

    Table top nanopatterning with extreme ultraviolet laser illumination M.G. Capeluto c , P. Wachulak practical table-top nanopatterning tools based on extreme ultraviolet lasers for nanotechnology applications. Ó 2007 Elsevier B.V. All rights reserved. Keywords: EUV lasers; Table top photolithography

  12. Hubble Space Telescope FOS Optical and Ultraviolet Spectroscopy of the Bow Shock HH 47A 1

    E-Print Network [OSTI]

    Hartigan, Patrick

    Hubble Space Telescope FOS Optical and Ultraviolet Spectroscopy of the Bow Shock HH 47A 1 Patrick Telescope of the HH 47A bow shock and Mach disk that cover the entire spectral range between 2220 Å¡ that the Fe II line broadening must exceed that expected from thermal motions. Excitation of ultraviolet Fe II

  13. Influence of laser pulse duration on extreme ultraviolet and ion emission features from tin plasmas

    E-Print Network [OSTI]

    Harilal, S. S.

    Influence of laser pulse duration on extreme ultraviolet and ion emission features from tin plasmas ultraviolet (EUV) radiation from a laser pro- duced tin plasma has been studied extensively in recent years. The need for 13.5 nm wavelength and a regenerative target lead to the use of tin droplet targets.10 Hot tin

  14. Context-based automated defect classification system using multiple morphological masks

    DOE Patents [OSTI]

    Gleason, Shaun S. (Knoxville, TN); Hunt, Martin A. (Knoxville, TN); Sari-Sarraf, Hamed (Lubbock, TX)

    2002-01-01T23:59:59.000Z

    Automatic detection of defects during the fabrication of semiconductor wafers is largely automated, but the classification of those defects is still performed manually by technicians. This invention includes novel digital image analysis techniques that generate unique feature vector descriptions of semiconductor defects as well as classifiers that use these descriptions to automatically categorize the defects into one of a set of pre-defined classes. Feature extraction techniques based on multiple-focus images, multiple-defect mask images, and segmented semiconductor wafer images are used to create unique feature-based descriptions of the semiconductor defects. These feature-based defect descriptions are subsequently classified by a defect classifier into categories that depend on defect characteristics and defect contextual information, that is, the semiconductor process layer(s) with which the defect comes in contact. At the heart of the system is a knowledge database that stores and distributes historical semiconductor wafer and defect data to guide the feature extraction and classification processes. In summary, this invention takes as its input a set of images containing semiconductor defect information, and generates as its output a classification for the defect that describes not only the defect itself, but also the location of that defect with respect to the semiconductor process layers.

  15. Enhanced Software for Displaying Orthographic, Stereographic, Gnomic and Cylindrical Projections of the Sunpath Diagram and Shading Mask Protractor

    E-Print Network [OSTI]

    Oh, K. W.; Haberl, J. S.; Degelman, L. O.

    2000-01-01T23:59:59.000Z

    . INTRODUCTION The sun-path diagram and shading mask protractor are well known graphic formats that have traditionally been used by architects and engineers to analyze whether or not a solar shading device will block direct sunlight on a given point... 1990), SOMBRERO (Schnieders et al. 1997), AWNSHADE (McCluney 1995), SOLAR-2 (Sheu 1986), SUNPATH (McCluney 1995), and SUNSPEC (McCluney 1995) programs. OPAQUE (Abouella and Milne 1990), developed by the Department of Architecture at UCLA, draws a...

  16. Volunteering at Research and Cultural Collections From Egyptian shabti figures to nineteenth century medical waxes, from West African Masks to modern British

    E-Print Network [OSTI]

    Birmingham, University of

    century medical waxes, from West African Masks to modern British landscape paintings, the Research: Basic cleaning and conservation of objects e.g. cleaning and waxing outdoor sculpture Basic remedial

  17. Design of the commissioning filter/mask/window assembly for undulator beamline front ends at the Advanced Photon Source

    SciTech Connect (OSTI)

    Shu, D.; Kuzay, T.M.

    1995-10-20T23:59:59.000Z

    A compact filter/mask/window assembly has been designed for undulator beamline commissioning activity at the Advanced Photon Source beamlines. The assembly consists of one 300-{mu}m graphite filter, one 127-{mu}m CVD diamond filter and two 250-{mu}m beryllium windows. A water-cooled Glidcop fixed mask with a 4.5-mm {times} 4.5-mm output optical aperture and a 0.96-mrad {times} 1.6-mrad beam missteering acceptance is a major part in the assembly. The CVD diamond filter which is mounted on the downstream side of the fixed mask is designed to also function as a transmitting x-ray beam position monitor. The sum signal from the latter can be used to monitor the physical condition of the graphite filter and prevent any possible chain reaction damage to the beryllium windows downstream. In this paper, the design concept as well as the detailed structural design of the commissioning window are presented. Further applications of the commissioning window commissioning window components are also discussed.

  18. A Close Companion Search around L Dwarfs using Aperture Masking Interferometry and Palomar Laser Guide Star Adaptive Optics

    E-Print Network [OSTI]

    Bernat, David; Ireland, Michael; Tuthill, Peter; Martinache, Frantz; Angione, John; Burruss, Rick S; Cromer, John L; Dekany, Richard G; Guiwits, Stephen R; Henning, John R; Hickey, Jeff; Kibblewhite, Edward; McKenna, Daniel L; Moore, Anna M; Petrie, Harold L; Roberts, Jennifer; Shelton, J Chris; Thicksten, Robert P; Trinh, Thang; Tripathi, Renu; Troy, Mitchell; Truong, Tuan; Velur, Viswa; Lloyd, James P

    2010-01-01T23:59:59.000Z

    We present a close companion search around sixteen known early-L dwarfs using aperture masking interferometry with Palomar laser guide star adaptive optics. The use of aperture masking allows the detection of close binaries, corresponding to projected physical separations of 0.6-10.0 AU for the targets of our survey. This survey achieved median contrast limits of Delta_K ~ 2.3 for separations between 1.2 - 4 lambda/D, and Delta_K ~ 1.4 at (2/3)lambda/D. We present four candidate binaries detected with moderate to high confidence (90-98%). Two have projected physical separations less than 1.5 AU. This may indicate that tight-separation binaries contribute more significantly to the binary fraction than currently assumed, consistent with spectroscopic and photometric overluminosity studies. Ten targets of this survey have previously been observed with the Hubble Space Telescope as part of companion searches. We use the increased resolution of aperture masking to search for close or dim companions that would be o...

  19. Cloud Detection with MODIS, Part I: Improvements in the MODIS Cloud Mask for Collection 5 *Richard A. Frey, Steven A. Ackerman, Yinghui Liu, Kathleen I. Strabala, Hong Zhang,

    E-Print Network [OSTI]

    Sheridan, Jennifer

    Cloud Detection with MODIS, Part I: Improvements in the MODIS Cloud Mask for Collection 5 *Richard.frey@ssec.wisc.edu August 2007 #12;ABSTRACT Significant improvements have been made to the MODIS cloud mask (MOD35 and MYD35 to the 3.9-12 m and 11-12 m cloud tests. More non-MODIS ancillary input data has been added. Land and sea

  20. Standoff ultraviolet raman scattering detection of trace levels of explosives.

    SciTech Connect (OSTI)

    Kulp, Thomas J.; Bisson, Scott E.; Reichardt, Thomas A.

    2011-10-01T23:59:59.000Z

    Ultraviolet (UV) Raman scattering with a 244-nm laser is evaluated for standoff detection of explosive compounds. The measured Raman scattering albedo is incorporated into a performance model that focused on standoff detection of trace levels of explosives. This model shows that detection at {approx}100 m would likely require tens of seconds, discouraging application at such ranges, and prohibiting search-mode detection, while leaving open the possibility of short-range point-and-stare detection. UV Raman spectra are also acquired for a number of anticipated background surfaces: tile, concrete, aluminum, cloth, and two different car paints (black and silver). While these spectra contained features in the same spectral range as those for TNT, we do not observe any spectra similar to that of TNT.

  1. Ultrafast Extreme Ultraviolet Induced Isomerization of Acetylene Cations

    SciTech Connect (OSTI)

    Jiang, Y. H.; Kurka, M.; Kuehnel, K. U.; Schroeter, C. D.; Moshammer, R. [Max-Planck-Institut fuer Kernphysik, 69117 Heidelberg (Germany); Rudenko, A.; Foucar, L. [Max-Planck Advanced Study Group at CFEL, 22607 Hamburg (Germany); Herrwerth, O.; Lezius, M.; Kling, M. F. [Max-Planck-Institut fuer Quantenoptik, 85748 Garching (Germany); Tilborg, J. van; Belkacem, A. [Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Ueda, K. [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 980-8577 Sendai (Japan); Duesterer, S.; Treusch, R. [DESY, 22607 Hamburg (Germany); Ullrich, J. [Max-Planck-Institut fuer Kernphysik, 69117 Heidelberg (Germany); Max-Planck Advanced Study Group at CFEL, 22607 Hamburg (Germany)

    2010-12-31T23:59:59.000Z

    Ultrafast isomerization of acetylene cations ([HC=CH]{sup +}) in the low-lying excited A{sup 2}{Sigma}{sub g}{sup +} state, populated by the absorption of extreme ultraviolet (XUV) photons (38 eV), has been observed at the Free Electron Laser in Hamburg, (FLASH). Recording coincident fragments C{sup +}+CH{sub 2}{sup +} as a function of time between XUV-pump and -probe pulses, generated by a split-mirror device, we find an isomerization time of 52{+-}15 fs in a kinetic energy release (KER) window of 5.8

  2. Ultrafast Extreme Ultraviolet Induced Isomerization of Acetylene Cations

    SciTech Connect (OSTI)

    Jiang, Y.; Rudenko, Artem; Herrwerth, O.; Foucar, L.; Kurka, M.; Kuhnel, K.; Lezius, M.; Kling, Matthias; van Tilborg, Jeroen; Belkacem, Ali; Ueda, K.; Dusterer, S.; Treusch, R.; Schroter, Claus-Dieter; Moshammer, Robbert; Ullrich, Joachim

    2011-06-17T23:59:59.000Z

    Ultrafast isomerization of acetylene cations ([HC = CH]{sup +}) in the low-lying excited A{sup 2}{Sigma}{sub g}{sup +} state, populated by the absorption of extreme ultraviolet (XUV) photons (38 eV), has been observed at the Free Electron Laser in Hamburg, (FLASH). Recording coincident fragments C{sup +} + CH{sub 2}{sup +} as a function of time between XUV-pump and -probe pulses, generated by a split-mirror device, we find an isomerization time of 52 {+-} 15 fs in a kinetic energy release (KER) window of 5.8 < KER < 8 eV, providing clear evidence for the existence of a fast, nonradiative decay channel.

  3. Strong Ultraviolet Pulse From a Newborn Type Ia Supernova

    E-Print Network [OSTI]

    Cao, Yi; Howell, D Andrew; Gal-Yam, Avishay; Kasliwal, Mansi M; Valenti, Stefano; Johansson, J; Amanullah, R; Goobar, A; Sollerman, J; Taddia, F; Horesh, Assaf; Sagiv, Ilan; Cenko, S Bradley; Nugent, Peter E; Arcavi, Iair; Surace, Jason; Wo?niak, P R; Moody, Daniela I; Rebbapragada, Umaa D; Bue, Brian D; Gehrels, Neil

    2015-01-01T23:59:59.000Z

    Type Ia supernovae are destructive explosions of carbon oxygen white dwarfs. Although they are used empirically to measure cosmological distances, the nature of their progenitors remains mysterious, One of the leading progenitor models, called the single degenerate channel, hypothesizes that a white dwarf accretes matter from a companion star and the resulting increase in its central pressure and temperature ignites thermonuclear explosion. Here we report observations of strong but declining ultraviolet emission from a Type Ia supernova within four days of its explosion. This emission is consistent with theoretical expectations of collision between material ejected by the supernova and a companion star, and therefore provides evidence that some Type Ia supernovae arise from the single degenerate channel.

  4. Upgrade of absolute extreme ultraviolet diagnostic on J-TEXT

    SciTech Connect (OSTI)

    Zhang, X. L.; Cheng, Z. F., E-mail: chengfe@hust.edu.cn; Hou, S. Y.; Zhuang, G.; Luo, J. [State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2014-11-15T23:59:59.000Z

    The absolute extreme ultraviolet (AXUV) diagnostic system is used for radiation observation on J-TEXT tokamak [J. Zhang, G. Zhuang, Z. J. Wang, Y. H. Ding, X. Q. Zhang, and Y. J. Tang, Rev. Sci. Instrum. 81, 073509 (2010)]. The upgrade of the AXUV system is aimed to improve the spatial resolution and provide a three-dimensional image on J-TEXT. The new system consists of 12 AXUV arrays (4 AXUV16ELG arrays, 8 AXUV20ELG arrays). The spatial resolution in the cross-section is 21 mm for the AXUV16ELG arrays and 17 mm for the AXUV20ELG arrays. The pre-amplifier is also upgraded for a higher signal to noise ratio. By upgrading the AXUV imaging system, a more accurate observation on the radiation information is obtained.

  5. Laser plasma formation assisted by ultraviolet pre-ionization

    SciTech Connect (OSTI)

    Yalin, Azer P., E-mail: ayalin@engr.colostate.edu; Dumitrache, Ciprian [Department of Mechanical Engineering, Colorado State University, Fort Collins, Colorado 80523 (United States); Wilvert, Nick [Sandia Laboratory, Albuquerque, New Mexico 87123 (United States); Joshi, Sachin [Cummins Inc., Columbus, Indiana 47201 (United States); Shneider, Mikhail N. [Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544 (United States)

    2014-10-15T23:59:59.000Z

    We present experimental and modeling studies of air pre-ionization using ultraviolet (UV) laser pulses and its effect on laser breakdown of an overlapped near-infrared (NIR) pulse. Experimental studies are conducted with a 266?nm beam (fourth harmonic of Nd:YAG) for UV pre-ionization and an overlapped 1064?nm NIR beam (fundamental of Nd:YAG), both having pulse duration of ?10?ns. Results show that the UV beam produces a pre-ionized volume which assists in breakdown of the NIR beam, leading to reduction in NIR breakdown threshold by factor of >2. Numerical modeling is performed to examine the ionization and breakdown of both beams. The modeled breakdown threshold of the NIR, including assist by pre-ionization, is in reasonable agreement with the experimental results.

  6. Ultraviolet photoluminescence from Gd-implanted AlN epilayers

    SciTech Connect (OSTI)

    Zavada, J. M.; Nepal, N.; Lin, J. Y.; Jiang, H. X.; Brown, E.; Hoemmerich, U.; Hite, J.; Thaler, G. T.; Abernathy, C. R.; Pearton, S. J.; Gwilliam, R. [U.S. Army Research Office, Durham, North Carolina 27709 (United States); Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States); Department of Physics, Hampton University, Hampton, Virginia 23668 (United States); Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Surrey Ion Beam Center, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)

    2006-10-09T23:59:59.000Z

    Deep ultraviolet emission from gadolinium (Gd)-implanted AlN thin films has been observed using photoluminescence (PL) spectroscopy. The AlN epilayers were ion implanted with Gd to a total dose of {approx}6x10{sup 14} cm{sup -2}. Using the output at 197 nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318 nm, characteristic of the trivalent Gd ion. A broader emission band, also centered at 318 nm, was measured with excitation at 263 nm. The PL emission intensity decreased by less than a factor of 3 over the sample temperature range of 10-300 K and decay transients were of the order of nanoseconds.

  7. Ultraviolet Resonant Raman Enhancements in the Detection of Explosives

    SciTech Connect (OSTI)

    Short, B J; Carter, J C; Gunter, D; Hovland, P; Jagode, H; Karavanic, K; Marin, G; Mellor-Crummey, J; Moore, S; Norris, B; Oliker, L; Olschanowsky, C; Roth, P C; Schulz, M; Shende, S; Snavely, A; Spear, W

    2009-06-03T23:59:59.000Z

    Raman-based spectroscopy is potentially militarily useful for standoff detection of high explosives. Normal (non-resonance) and resonance Raman spectroscopies are both light scattering techniques that use a laser to measure the vibrational spectrum of a sample. In resonance Raman, the laser is tuned to match the wavelength of a strong electronic absorbance in the molecule of interest, whereas, in normal Raman the laser is not tuned to any strong electronic absorbance bands. The selection of appropriate excitation wavelengths in resonance Raman can result in a dramatic increase in the Raman scattering efficiency of select band(s) associated with the electronic transition. Other than the excitation wavelength, however, resonance Raman is performed experimentally the same as normal Raman. In these studies, normal and resonance Raman spectral signatures of select solid high explosive (HE) samples and explosive precursors were collected at 785 nm, 244 nm and 229 nm. Solutions of PETN, TNT, and explosive precursors (DNT & PNT) in acetonitrile solvent as an internal Raman standard were quantitatively evaluated using ultraviolet resonance Raman (UVRR) microscopy and normal Raman spectroscopy as a function of power and select excitation wavelengths. Use of an internal standard allowed resonance enhancements to be estimated at 229 nm and 244 nm. Investigations demonstrated that UVRR provided {approx}2000-fold enhancement at 244 nm and {approx}800-fold improvement at 229 nm while PETN showed a maximum of {approx}25-fold at 244 nm and {approx}190-fold enhancement at 229 nm solely from resonance effects when compared to normal Raman measurements. In addition to the observed resonance enhancements, additional Raman signal enhancements are obtained with ultraviolet excitation (i.e., Raman scattering scales as !4 for measurements based on scattered photons). A model, based partly on the resonance Raman enhancement results for HE solutions, is presented for estimating Raman enhancements for solid HE samples.

  8. Reflective optical imaging systems with balanced distortion

    DOE Patents [OSTI]

    Hudyma, Russell M. (San Ramon, CA)

    2001-01-01T23:59:59.000Z

    Optical systems compatible with extreme ultraviolet radiation comprising four reflective elements for projecting a mask image onto a substrate are described. The four optical elements comprise, in order from object to image, convex, concave, convex and concave mirrors. The optical systems are particularly suited for step and scan lithography methods. The invention enables the use of larger slit dimensions associated with ring field scanning optics, improves wafer throughput, and allows higher semiconductor device density. The inventive optical systems are characterized by reduced dynamic distortion because the static distortion is balanced across the slit width.

  9. Sensitivity calibration of an imaging extreme ultraviolet spectrometer-detector system for determining the efficiency of broadband extreme ultraviolet sources

    SciTech Connect (OSTI)

    Fuchs, S.; Roedel, C.; Bierbach, J.; Paz, A. E.; Foerster, E.; Paulus, G. G. [Institute of Optics und Quantum Electronics, Friedrich-Schiller-University Jena (Germany); Helmholtz-Institute Jena (Germany); Krebs, M. [Institute of Applied Physics, Friedrich-Schiller-University Jena (Germany); Haedrich, S.; Limpert, J. [Helmholtz-Institute Jena (Germany); Institute of Applied Physics, Friedrich-Schiller-University Jena (Germany); Kuschel, S.; Wuensche, M.; Hilbert, V.; Zastrau, U. [Institute of Optics und Quantum Electronics, Friedrich-Schiller-University Jena (Germany)

    2013-02-15T23:59:59.000Z

    We report on the absolute sensitivity calibration of an extreme ultraviolet (XUV) spectrometer system that is frequently employed to study emission from short-pulse laser experiments. The XUV spectrometer, consisting of a toroidal mirror and a transmission grating, was characterized at a synchrotron source in respect of the ratio of the detected to the incident photon flux at photon energies ranging from 15.5 eV to 99 eV. The absolute calibration allows the determination of the XUV photon number emitted by laser-based XUV sources, e.g., high-harmonic generation from plasma surfaces or in gaseous media. We have demonstrated high-harmonic generation in gases and plasma surfaces providing 2.3 {mu}W and {mu}J per harmonic using the respective generation mechanisms.

  10. Method and apparatus for producing durationally short ultraviolet or X-ray laser pulses

    DOE Patents [OSTI]

    MacGowan, Brian J. (Livermore, CA); Matthews, Dennis L. (El Granada, CA); Trebes, James E. (Livermore, CA)

    1988-01-01T23:59:59.000Z

    A method and apparatus is disclosed for producing ultraviolet or X-ray laser pulses of short duration (32). An ultraviolet or X-ray laser pulse of long duration (12) is progressively refracted, across the surface of an opaque barrier (28), by a streaming plasma (22) that is produced by illuminating a solid target (16, 18) with a pulse of conventional line focused high power laser radiation (20). The short pulse of ultraviolet or X-ray laser radiation (32), which may be amplified to high power (40, 42), is separated out by passage through a slit aperture (30) in the opaque barrier (28).

  11. Method and apparatus for producing durationally short ultraviolet or x-ray laser pulses

    DOE Patents [OSTI]

    MacGowan, B.J.; Matthews, D.L.; Trebes, J.E.

    1987-05-05T23:59:59.000Z

    A method and apparatus is disclosed for producing ultraviolet or x- ray laser pulses of short duration. An ultraviolet or x-ray laser pulse of long duration is progressively refracted, across the surface of an opaque barrier, by a streaming plasma that is produced by illuminating a solid target with a pulse of conventional line focused high power laser radiation. The short pulse of ultraviolet or x-ray laser radiation, which may be amplified to high power, is separated out by passage through a slit aperture in the opaque barrier.

  12. all-solid-state ultraviolet laser: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    C. S. Menoni, and J. J. Rocca NSFERC for Extreme Ultraviolet Science. J. E. Trebes, S. B. Brown, E. M. Campbell, D. L. Matthews, D. G. Nilson, G. F. Stone, and D. A amplifier,"...

  13. The development and application of a diode-laser-based ultraviolet absorption sensor for nitric oxide 

    E-Print Network [OSTI]

    Anderson, Thomas Nathan

    2004-09-30T23:59:59.000Z

    This thesis describes the development of a new type of sensor for nitric oxide (NO) that can be used in a variety of combustion diagnostics and control applications. The sensor utilizes the absorption of ultraviolet (UV) ...

  14. Tryptophan Cluster Protects Human ?D-Crystallin from Ultraviolet Radiation-Induced Photoaggregation

    E-Print Network [OSTI]

    Schafheimer, Steven Nathaniel

    Exposure to ultraviolet radiation (UVR) is a significant risk factor for age-related cataract, a disease of the human lens and the most prevalent cause of blindness in the world. Cataract pathology involves protein misfolding ...

  15. Quantum Field Theory on Noncommutative Space-Times and the Persistence of Ultraviolet Divergences

    E-Print Network [OSTI]

    M. Chaichian; A. Demichev; P. Presnajder

    1999-04-13T23:59:59.000Z

    We study properties of a scalar quantum field theory on two-dimensional noncommutative space-times. Contrary to the common belief that noncommutativity of space-time would be a key to remove the ultraviolet divergences, we show that field theories on a noncommutative plane with the most natural Heisenberg-like commutation relations among coordinates or even on a noncommutative quantum plane with $E_q(2)$-symmetry have ultraviolet divergences, while the theory on a noncommutative cylinder is ultraviolet finite. Thus, ultraviolet behaviour of a field theory on noncommutative spaces is sensitive to the topology of the space-time, namely to its compactness. We present general arguments for the case of higher space-time dimensions and as well discuss the symmetry transformations of physical states on noncommutative space-times.

  16. EVIDENCE FOR TYPE Ia SUPERNOVA DIVERSITY FROM ULTRAVIOLET OBSERVATIONS WITH THE HUBBLE SPACE TELESCOPE

    E-Print Network [OSTI]

    Lewin, Walter H. G.

    We present ultraviolet (UV) spectroscopy and photometry of four Type Ia supernovae (SNe 2004dt, 2004ef, 2005M, and 2005cf) obtained with the UV prism of the Advanced Camera for Surveys on the Hubble Space Telescope. This ...

  17. The O iv and S iv intercombination lines in the ultraviolet spectra of astrophysical sources

    E-Print Network [OSTI]

    , obtained with the Solar Ultraviolet Measurements of the Emitted Radiation (sumer) instrument on the Solar/09/2002; 9:46; p.1 #12; 2 Keenan et al. line ratios and observational data. For example, Cook et al. (1995

  18. Solar ultraviolet-B radiation and vitamin D: a cross-sectional population-based

    E-Print Network [OSTI]

    Wirosoetisno, Djoko

    Solar ultraviolet-B radiation and vitamin D: a cross-sectional population-based study using data,3* Abstract Background: Exposure to solar ultraviolet-B (UV-B) radiation is a major source of vitamin D3AUR 17326E125C4(7E3E3C7E>4(72B43.EE7D4" 7D4":BE27B725CE9393BE647 #12;RESEARCH ARTICLE Open Access Solar

  19. Microbial Reduction on Eggshell Surfaces by the use of Hydrogen Peroxide and Ultraviolet Light

    E-Print Network [OSTI]

    Gottselig, Steven Michael

    2011-10-21T23:59:59.000Z

    MICROBIAL REDUCTION ON EGGSHELL SURFACES BY THE USE OF HYDROGEN PEROXIDE AND ULTRAVIOLET LIGHT A Thesis by STEVEN MICHAEL GOTTSELIG Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment... of the requirements for the degree of MASTER OF SCIENCE August 2011 Major Subject: Poultry Science Microbial Reduction on Eggshell Surfaces by the Use of Hydrogen Peroxide and Ultraviolet Light Copyright 2011...

  20. Ultraviolet light absorbers having two different chromophors in the same molecule

    DOE Patents [OSTI]

    Vogl, O.; Li, S.

    1983-10-06T23:59:59.000Z

    This invention relates to novel ultraviolet light absorbers having two chromophors in the same molecule, and more particularly to benzotriazole substituted dihydroxybenzophenones and acetophenones. More particularly, this invention relates to 3,5-(di(2H-benzotriazole-2-yl))-2,4-dihydroxybenzophenone and 3,5-(di(2H-benzotriazole-2-yl))-2,4-dihydroxyacetophenone which are particularly useful as an ultraviolet light absorbers.

  1. Gas-phase ultraviolet photoelectron spectroscopy and molecular orbital calculations on transition metal carbonyls and nitrosyls

    E-Print Network [OSTI]

    Morris-Sherwood, Betty Jeanne

    1981-01-01T23:59:59.000Z

    GAS-PHASE ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY AND MOLECULAR ORBITAL CALCULATIONS ON TRANSITION METAL CARBONYLS AND NITROSYLS A Thesis by BETTY JEANNE MORRIS-SHERWOOD Submitted to the Graduate College of Texas ARM Uni ver s i ty in partial... JEANNE MORRIS-SHERWOOD Approved as to sty1e and content by: (Chairman of Committee) (Member): (Niember) r / )g (Head of Department) December 1981 ABSTRACT Gas-Phas Ultraviolet Photoelectron Spectroscopy and Molecular Orbital Calculations...

  2. analysis phase exposure: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    measurements and set up test Haddadi, Hamed 2 Dual exposure, two-photon, conformal phase mask lithography for three dimensional silicon inverse woodpile photonic crystals...

  3. Graphene defect formation by extreme ultraviolet generated photoelectrons

    SciTech Connect (OSTI)

    Gao, A., E-mail: a.gao@utwente.nl; Lee, C. J.; Bijkerk, F. [FOM-Dutch Institute for Fundamental Energy Research, Edisonbaan 14, 3439 MN Nieuwegein, The Netherlands and XUV Optics Group, MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)

    2014-08-07T23:59:59.000Z

    We have studied the effect of photoelectrons on defect formation in graphene during extreme ultraviolet (EUV) irradiation. Assuming the major role of these low energy electrons, we have mimicked the process by using low energy primary electrons. Graphene is irradiated by an electron beam with energy lower than 80?eV. After e-beam irradiation, it is found that the D peak, I(D), appears in the Raman spectrum, indicating defect formation in graphene. The evolution of I(D)/I(G) follows the amorphization trajectory with increasing irradiation dose, indicating that graphene goes through a transformation from microcrystalline to nanocrystalline and then further to amorphous carbon. Further, irradiation of graphene with increased water partial pressure does not significantly change the Raman spectra, which suggests that, in the extremely low energy range, e-beam induced chemical reactions between residual water and graphene are not the dominant mechanism driving defect formation in graphene. Single layer graphene, partially suspended over holes was irradiated with EUV radiation. By comparing with the Raman results from e-beam irradiation, it is concluded that the photoelectrons, especially those from the valence band, contribute to defect formation in graphene during irradiation.

  4. The Far-Ultraviolet Ups and Downs of Alpha Centauri

    E-Print Network [OSTI]

    Ayres, Thomas R

    2014-01-01T23:59:59.000Z

    Four years (2010-2014) of semiannual pointings by Hubble Space Telescope Imaging Spectrograph (STIS) on nearby Alpha Centauri have yielded a detailed time history of far-ultraviolet emissions of the solar-like primary (A: G2V) and the cooler, but more active, secondary (B: K1V). This period saw A climbing out of a prolonged coronal X-ray minimum, as documented by Chandra, while B was rising to, then falling from, a peak of its long-term (8 yr) starspot cycle. The FUV fluxes of the primary were steady over most of the STIS period, although the [Fe XII] 124 nm coronal forbidden line (T= 1.5 MK) partly mirrored the slowly rising X-ray fluxes. The FUV emissions of the secondary more closely tracked the rise and fall of its coronal luminosities, especially the "hot lines" like Si IV, C IV, and N V (T= 80,000-200,000 K), and coronal [Fe XII] itself. The hot lines of both stars were systematically redshifted, relative to narrow chromospheric emissions, by several km/s, showing little change in amplitude over the 4-y...

  5. AN EXTREME-ULTRAVIOLET WAVE ASSOCIATED WITH A SURGE

    SciTech Connect (OSTI)

    Zheng, Ruisheng; Jiang, Yunchun; Yang, Jiayan; Bi, Yi; Hong, Junchao; Yang, Bo; Yang, Dan, E-mail: zhrsh@ynao.ac.cn [National Astronomical Observatories/Yunnan Astronomical Observatory, Chinese Academy of Sciences, Kunming 650011 (China)] [National Astronomical Observatories/Yunnan Astronomical Observatory, Chinese Academy of Sciences, Kunming 650011 (China)

    2013-02-10T23:59:59.000Z

    Taking advantage of the high temporal and spatial resolution observations from the Solar Dynamics Observatory, we present an extreme-ultraviolet (EUV) wave associated with a surge on 2010 November 13. Due to the magnetic flux cancelation, some surges formed in the source active region (AR). The strongest surge produced our studied event. The surge was deflected by the nearby loops that connected to another AR, and disrupted the overlying loops that slowly expanded and eventually evolved into a weak coronal mass ejection (CME). The surge was likely associated with the core of the CME. The EUV wave happened after the surge deflected. The wave departed far from the flare center and showed a close location relative to the deflected surge. The wave propagated in a narrow angular extent, mainly in the ejection direction of the surge. The close timing and location relations between the EUV wave and the surge indicate that the wave was closely associated with the CME. The wave had a velocity of 310-350 km s{sup -1}, while the speeds of the surge and the expanding loops were about 130 and 150 km s{sup -1}, respectively. All of the results suggest that the EUV wave was a fast-mode wave and was most likely triggered by the weak CME.

  6. Ultraviolet laser ablation of polycarbonate and glass in air

    SciTech Connect (OSTI)

    Bormotova, T. A.; Blumenthal, R. [Auburn University, Alabama 36849 (United States)

    2009-02-01T23:59:59.000Z

    The fundamental physical processes that follow ultraviolet laser ablation of polycarbonate and borosilicate glass in air have been investigated using photodeflection as a function of the distance from the surface to probe laser. Four features were observed in the data sets for each material. Two of these features correlate well with gas dynamical predictions for the expansion of the shock wave and gas plume. The third feature is consistent with the propagation of the popping sound of the laser ablation event. The final feature, which occurs at very early times and does not shift significantly in time as the surface to probe distance is increased from 0 to greater than 6 mm, has been tentatively ascribed to the ejection of fast electrons. The final significant observation is complete blocking of the probe laser, only observed during borosilicate ablation, which is attributed to scattering of the probe laser light by macroscopic SiO{sub x} particles that grow in the final stages of plume expansion and cooling.

  7. Performance of multilayer coated concave gratings in the extreme ultraviolet

    SciTech Connect (OSTI)

    Bixler, J.V.; Barbee, T.W. Jr.; Dietrich, D.D.

    1989-06-13T23:59:59.000Z

    Recent advances in multilayer structures for the Extreme Ultraviolet now make it possible to construct diffraction gratings in the wavelength range below 250 /angstrom/ which can be used for precision measurements using normal incidence spectrometers. We report results from two such gratings, one conventionally ruled and other holographically ruled. Both are one meter radius, 1200 lines per millimeter gratings coated with a molybdenum-silicon multilayer for use in the 150 /angstrom/ wavelength region. A McPherson 225 one meter normal incidence spectrometer with a Garton flash tube source and a film detector was used to test the resolution. Semiquantitative efficiency measurements were made by comparing the spectra with that produced by an osmium coated gratings. Oxygen lines in the wavelength region of interest (characteristic of the source) are easily detected and well resolved with both multilayer coated gratings. The same lines are faint or undetected with the osmium coated grating. Quantitative efficiency measurement were performed using a Penning source and a photon counting detector. 9 refs., 4 figs., 1 tab.

  8. Ultrasonic generator and detector using an optical mask having a grating for launching a plurality of spatially distributed, time varying strain pulses in a sample

    DOE Patents [OSTI]

    Maris, Humphrey J. (Barrington, RI)

    2003-01-01T23:59:59.000Z

    A method and a system are disclosed for determining at least one characteristic of a sample that contains a substrate and at least one film disposed on or over a surface of the substrate. The method includes a first step of placing a mask over a free surface of the at least one film, where the mask has a top surface and a bottom surface that is placed adjacent to the free surface of the film. The bottom surface of the mask has formed therein or thereon a plurality of features for forming at least one grating. A next step directs optical pump pulses through the mask to the free surface of the film, where individual ones of the pump pulses are followed by at least one optical probe pulse. The pump pulses are spatially distributed by the grating for launching a plurality of spatially distributed, time varying strain pulses within the film, which cause a detectable change in optical constants of the film. A next step detects a reflected or a transmitted portion of the probe pulses, which are also spatially distributed by the grating. A next step measures a change in at least one characteristic of at least one of reflected or transmitted probe pulses due to the change in optical constants, and a further step determines the at least one characteristic of the sample from the measured change in the at least one characteristic of the probe pulses. An optical mask is also disclosed herein, and forms a part of these teachings.

  9. Ultrasonic generator and detector using an optical mask having a grating for launching a plurality of spatially distributed, time varying strain pulses in a sample

    DOE Patents [OSTI]

    Maris, Humphrey J. (Barrington, RI)

    2002-01-01T23:59:59.000Z

    A method and a system are disclosed for determining at least one characteristic of a sample that contains a substrate and at least one film disposed on or over a surface of the substrate. The method includes a first step of placing a mask over a free surface of the at least one film, where the mask has a top surface and a bottom surface that is placed adjacent to the free surface of the film. The bottom surface of the mask has formed therein or thereon a plurality of features for forming at least one grating. A next step directs optical pump pulses through the mask to the free surface of the film, where individual ones of the pump pulses are followed by at least one optical probe pulse. The pump pulses are spatially distributed by the grating for launching a plurality of spatially distributed, time varying strain pulses within the film, which cause a detectable change in optical constants of the film. A next step detects a reflected or a transmitted portion of the probe pulses, which are also spatially distributed by the grating. A next step measures a change in at least one characteristic of at least one of reflected or transmitted probe pulses due to the change in optical constants, and a further step determines the at least one characteristic of the sample from the measured change in the at least one characteristic of the probe pulses. An optical mask is also disclosed herein, and forms a part of these teachings.

  10. Optical Properties and London Dispersion Forces of Amorphous Silica Determined by Vacuum Ultraviolet Spectroscopy and

    E-Print Network [OSTI]

    Rollins, Andrew M.

    for semiconductor fabrication, re- cently as a potential 157 nm mask substrate. The optical properties in the vacuum, optical fibers, and microelectronics such as metal oxide semiconductor transistors, etc.1 It also forms is tetrahedrally coordinated with four oxygen atoms and each oxygen atom serves as a bridge connecting two

  11. The Near-Ultraviolet Continuum of Late-Type Stars

    E-Print Network [OSTI]

    Carlos Allende Prieto; David L. Lambert

    2000-01-28T23:59:59.000Z

    Analyses of the near-ultraviolet continuum of late-type stars have led to controversial results regarding the performance of state-of-the-art model atmospheres. The release of the homogeneous IUE final archive and the availability of the high-accuracy Hipparcos parallaxes provide an opportunity to revisit this issue, as accurate stellar distances make it possible to compare observed absolute fluxes with the predictions of model atmospheres. The near-UV continuum is highly sensitive to Teff and [Fe/H], and once the gravity is constrained from the parallax, these parameters may be derived from the analysis of low-dispersion "long-wavelength" (2000-3000 A) IUE spectra for stars previously studied by Alonso et al. (1996; A&AS 117, 227) using the Infrared Flux Method (IRFM). A second comparison is carried out against the stars spectroscopically investigated by Gratton et al. (1996; A&A 314, 191). It is shown that there is a good agreement between Teffs obtained from the IRFM and from the near-UV continuum, and a remarkable correspondence between observed and synthetic fluxes for stars with 4000 <= Teff <= 6000 K of any metallicity and gravity. These facts suggest that model atmospheres provide an adequate description of the near-UV continuum forming region and that the opacities involved are essentially understood. For cooler stars, the results of the IRFM are no longer reliable, as shown by Alonso et al., but the discrepancy noticed for stars hotter than 6000 K may reflect problems in the model atmospheres and/or the opacities at these higher temperatures.

  12. Growth of individual carbon nanotubes on an array of TiN/Ni nanodots patterned by e-beam lithography and defined by dry etching for field emission application.

    E-Print Network [OSTI]

    Boyer, Edmond

    or nanoimprint lithography 11 with lift-off. After realizing holes in a resin layer, a TiN film (acting is critical in particular for sputtered layers. Moreover, the deposited TiN film contains carbon and oxygen was employed to etch hal-00880711,version1-8Nov2013 #12;Ni and TiN layers. Following the stripping of HSQ

  13. A simple transfer-optics system for an extreme-ultraviolet synchrotron beamline

    SciTech Connect (OSTI)

    Tarrio, C.; Grantham, S.; Vest, R.E.; Liu, K. [Electron and Optical Physics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8410 (United States)

    2005-04-01T23:59:59.000Z

    Radiometric experiments often require comparatively high intensities in the extreme ultraviolet, in the microwatt range. The monochromators that provide the high throughput needed for these experiments, though, do not always allow for end stations to be switched out easily. At the National Institute of Standards and Technology Synchrotron Ultraviolet Radiation Facility, the only beamline with sufficient extreme-ultraviolet power has a multi-ton endstation, which cannot be moved. We will describe a set of transfer optics that allow the photon beam to be collimated and deflected through a port on the downstream end of the large chamber. This allowed an absolute cryogenic radiometer to be attached, with the entrance cavity underfilled. We will describe ray-tracing results and offer preliminary results of the radiometer-based throughput of the system.

  14. Laser triggered Z-pinch broadband extreme ultraviolet source for metrology

    SciTech Connect (OSTI)

    Tobin, I.; Lunney, J. G. [School of Physics, Trinity College Dublin, Dublin 2 (Ireland)] [School of Physics, Trinity College Dublin, Dublin 2 (Ireland); Juschkin, L. [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland) [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Department of Physics, RWTH Aachen University, Steinbachstr. 15 D-52074 Aachen (Germany); Sidelnikov, Y. [ISAN Institute of Spectroscopy, Fizicheskaya Str. 5, Troitsk, Moscow Region 142190 (Russian Federation)] [ISAN Institute of Spectroscopy, Fizicheskaya Str. 5, Troitsk, Moscow Region 142190 (Russian Federation); O'Reilly, F.; Sokell, E. [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland)] [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Sheridan, P. [Newlambda Technologies, UCD Science Centre North, Belfield, Dublin 4 (Ireland)] [Newlambda Technologies, UCD Science Centre North, Belfield, Dublin 4 (Ireland)

    2013-05-20T23:59:59.000Z

    We compare the extreme ultraviolet emission characteristics of tin and galinstan (atomic %: Ga: 78.35, In: 14.93, Sn: 6.72) between 10 nm and 18 nm in a laser-triggered discharge between liquid metal-coated electrodes. Over this wavelength range, the energy conversion efficiency for galinstan is approximately half that of tin, but the spectrum is less strongly peaked in the 13-15 nm region. The extreme ultraviolet source dimensions were 110 {+-} 25 {mu}m diameter and 500 {+-} 125 {mu}m length. The flatter spectrum, and -19 Degree-Sign C melting point, makes this galinstan discharge a relatively simple high radiance extreme ultraviolet light source for metrology and scientific applications.

  15. Climatic isotope signals in tree rings masked by air pollution: A case study conducted along the Mont Blanc Tunnel access road (Western Alps, Italy)

    E-Print Network [OSTI]

    Climatic isotope signals in tree rings masked by air pollution: A case study conducted along, Switzerland h i g h l i g h t s air pollution on the climatic signal recorded in the d13 C chronologies. Air pollution loads strongly influence the photosynthetic process.

  16. Pattern Recognition Pergamon Press 1973. Vol, 5, pp. 175-197. Printed in Great Britain The "Rubber-Mask" Technique I.

    E-Print Network [OSTI]

    Widrow, Bernard

    Pattern Recognition Pergamon Press 1973. Vol, 5, pp. 175-197. Printed in Great Britain The "Rubber in size, fuzzy, rotated, translated, observed at an unusual perspective, etc. Flexible templates (rubber, and electroencephalogram waveforms are illustrated. The rubber-mask technique will probably be usable in a wide variety

  17. Note: Hollow cathode lamp with integral, high optical efficiency isolation valve: A modular vacuum ultraviolet source

    SciTech Connect (OSTI)

    Sloan Roberts, F.; Anderson, Scott L. [Department of Chemistry, University of Utah, 315 S. 1400 E., Salt Lake City, Utah 84112 (United States)] [Department of Chemistry, University of Utah, 315 S. 1400 E., Salt Lake City, Utah 84112 (United States)

    2013-12-15T23:59:59.000Z

    The design and operating conditions of a hollow cathode discharge lamp for the generation of vacuum ultraviolet radiation, suitable for ultrahigh vacuum (UHV) application, are described in detail. The design is easily constructed, and modular, allowing it to be adapted to different experimental requirements. A thin isolation valve is built into one of the differential pumping stages, isolating the discharge section from the UHV section, both for vacuum safety and to allow lamp maintenance without venting the UHV chamber. The lamp has been used both for ultraviolet photoelectron spectroscopy of surfaces and as a “soft” photoionization source for gas-phase mass spectrometry.

  18. Nonadiabatic calculations of ultraviolet absorption cross section of sulfur monoxide: Isotopic effects on the photodissociation reaction

    SciTech Connect (OSTI)

    Danielache, Sebastian O.; Tomoya, Suzuki; Nanbu, Shinkoh [Department of Materials and Life Sciences, Faculty of Science and Technology, Sophia University, Chiyoda Ku, Tokyo 102-8554 (Japan)] [Department of Materials and Life Sciences, Faculty of Science and Technology, Sophia University, Chiyoda Ku, Tokyo 102-8554 (Japan); Kondorsky, Alexey [P. N. Lebedev Physical Institute of Russian Academy of Science, Leninsky pr., 53, Moscow, 119991 (Russian Federation) [P. N. Lebedev Physical Institute of Russian Academy of Science, Leninsky pr., 53, Moscow, 119991 (Russian Federation); Moscow Institute of Physics and Technology (State University), Institutsky per., 9, Dolgoprudny Moscow region, 141700 (Russian Federation); Tokue, Ikuo [Department of Chemistry, Faculty of Science, Niigata University, Ikarashi, Niigata 950-2181 (Japan)] [Department of Chemistry, Faculty of Science, Niigata University, Ikarashi, Niigata 950-2181 (Japan)

    2014-01-28T23:59:59.000Z

    Ultraviolet absorption cross sections of the main and substituted sulfur monoxide (SO) isotopologues were calculated using R-Matrix expansion technique. Energies, transition dipole moments, and nonadiabatic coupling matrix elements were calculated at MRCI/AV6Z level. The calculated absorption cross section of {sup 32}S{sup 16}O was compared with experimental spectrum; the spectral feature and the absolute value of photoabsorption cross sections are in good agreement. Our calculation predicts a long lived photoexcited SO* species which causes large non-mass dependent isotopic effects depending on the excitation energy in the ultraviolet region.

  19. Re-evaluation of SO2 release of the 15 June 1991 Pinatubo eruption using ultraviolet and infrared satellite sensors

    E-Print Network [OSTI]

    Rose, William I.

    Re-evaluation of SO2 release of the 15 June 1991 Pinatubo eruption using ultraviolet and infrared Infrared Radiation Sounder/2) sensor, whose data sets have a higher temporal resolution, are also analyzed ultraviolet and infrared satellite sensors, Geochem. Geophys. Geosyst., 5, Q04001, doi:10.1029/ 2003GC000654

  20. Carbon contamination and oxidation of Au surfaces under extreme ultraviolet radiation: An x-ray photoelectron spectroscopy study

    E-Print Network [OSTI]

    Harilal, S. S.

    Carbon contamination and oxidation of Au surfaces under extreme ultraviolet radiation: An x 2012) Extreme ultraviolet (EUV) radiation-induced carbon contamination and oxidation of Au surfaces modification during EUV exposure. XPS analysis showed that total carbon contamination (C 1s peak

  1. 620 OPTICS LETTERS / Vol. 29, No. 6 / March 15, 2004 Damage to extreme-ultraviolet Sc Si multilayer mirrors

    E-Print Network [OSTI]

    Rocca, Jorge J.

    620 OPTICS LETTERS / Vol. 29, No. 6 / March 15, 2004 Damage to extreme-ultraviolet Sc Si multilayer, Russia Received August 21, 2003 The damage threshold and damage mechanism of extreme-ultraviolet Sc Si multilayer mirror coatings are investigated with focused nanosecond pulses at 46.9-nm radiation from

  2. Solvent Immersion Imprint Lithography

    SciTech Connect (OSTI)

    Vasdekis, Andreas E.; Wilkins, Michael J.; Grate, Jay W.; Kelly, Ryan T.; Konopka, Allan; Xantheas, Sotiris S.; Chang, M. T.

    2014-06-21T23:59:59.000Z

    The mechanism of polymer disolution was explored for polymer microsystem prototyping, including microfluidics and optofluidics. Polymer films are immersed in a solvent, imprinted and finally brought into contact with a non-modified surface to permanently bond. The underlying polymer-solvent interactions were experimentally and theoretically investigated, and enabled rapid polymer microsystem prototyping. During imprinting, small molecule integration in the molded surfaces was feasible, a principle applied to oxygen sensing. Polystyrene (PS) was employed for microbiological studies at extreme environmental conditions. The thermophile anaerobe Clostridium Thermocellum was grown in PS pore-scale micromodels, revealing a double mean generation lifetime than under ideal culture conditions. Microsystem prototyping through directed polymer dissolution is simple and accessible, while simultaneous patterning, bonding, and surface/volume functionalization are possible in less than one minute.

  3. Advances in Lithography

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisiting the TWP TWP Related LinksATHENAAdministrative80-AAAdvancedof

  4. Application of a Theory for Generation of Soft X-Ray by Storage Rings and Its Use For X-Ray Lithography

    SciTech Connect (OSTI)

    Minkov, D. [21st Century COE SLLS (Japan); Yamada, H. [21st Century COE SLLS (Japan); Ritsumeikan University (Japan); PPL Co. Ltd., 1-1-1 Nojihigashi, Kusatsu City, Shiga 525-8577 (Japan); Toyosugi, N.; Morita, M. [PPL Co. Ltd., 1-1-1 Nojihigashi, Kusatsu City, Shiga 525-8577 (Japan); Yamaguchi, T. [Ritsumeikan University (Japan)

    2007-01-19T23:59:59.000Z

    A theory has been developed for generation of soft X-ray transition radiation (TR) by storage ring synchrotrons. It takes into consideration that the dielectric constant of the TR target material is a complex number, utilizes an explicit expression for the number of passes of an injected electron through the target, and describes more precisely the absorption of TR in the target. Such TR can be used for performing X-ray lithography (XRL), and therefore a formula is included for the sensitivity of the photoresist used in XRL. TR targets for XRL can be optimized, based on finding a maximum of the resist sensitivity. Application of this theory to optimization of Mg target shows that a target containing only one Mg foil, with a thickness of about 245 nm is the best Mg target, for performing XRL by our storage ring synchrotron MIRRORCLE-20SX.

  5. JOURNAL DE PHYSIQUE Colloque C4, supplkment au no 7 , Tome 39, Juillet 1978,page C4-221 STRATOSPHERIC POLLUTION RELATED ULTRAVIOLET RADIATION

    E-Print Network [OSTI]

    Boyer, Edmond

    -221 STRATOSPHERIC POLLUTION RELATED ULTRAVIOLET RADIATION PHENOMENA M. ACKERMAN Institut d'Abronomie Spatiale de aspects with recent examples. The new data obtained on the solar ultraviolet radiation since seven years are emphasized. 1. Introduction. - Solar ultraviolet radiation plays a fundamental role in the formation

  6. Infrared and ultraviolet problem for the Nelson model with variable coefficients

    E-Print Network [OSTI]

    Infrared and ultraviolet problem for the Nelson model with variable coefficients C. G´erard,1 , F of the Hamiltonian in the presence of the infrared problem, i.e. assuming that the boson mass tends to 0 at infinity state one usually speaks of the infrared problem or infrared divergence. The infrared problem arises

  7. Design and Evaluation of a Low-Cost Point-of-Use Ultraviolet Water Disinfection Device

    E-Print Network [OSTI]

    Kammen, Daniel M.

    receive chlorinated water while another receives contaminated water with no residual level of chlorineDesign and Evaluation of a Low-Cost Point-of-Use Ultraviolet Water Disinfection Device Alicia Cohn around the world to supply safe drinking water. We have developed a device for disinfecting drinking

  8. THE PREFLIGHT PHOTOMETRIC CALIBRATION OF THE EXTREME-ULTRAVIOLET IMAGING TELESCOPE EIT

    E-Print Network [OSTI]

    K. P. Dere; J. D. Moses; J. -p. Delaboudinière; J. Brunaud; C. Carabetian; J. -f. Hochedez; X. Y. Song; R. C. Catura; F. Clette

    1999-01-01T23:59:59.000Z

    Abstract. This paper presents the preflight photometric calibration of the Extreme-ultraviolet Imaging Telescope (EIT) aboard the Solar and Heliospheric Observatory (SOHO). The EIT consists of a Ritchey–Chrétien telescope with multilayer coatings applied to four quadrants of the primary and secondary mirrors, several filters and a backside-thinned CCD detector. The quadrants of the EIT

  9. Assessment of a low-cost, point-of-use, ultraviolet water disinfection technology

    E-Print Network [OSTI]

    Kammen, Daniel M.

    lack access to safe drinking water and an accelerated effort is required if the MDG is to be met (WHOAssessment of a low-cost, point-of-use, ultraviolet water disinfection technology Sarah A. Brownell, Portland, OR, USA Rachel L. Peletz Centre for Affordable Water and Sanitation Technology, Calgary, Canada

  10. Non-thermal calcination by ultraviolet irradiation in the synthesis of microporous materials

    E-Print Network [OSTI]

    Parikh, Atul N.

    Non-thermal calcination by ultraviolet irradiation in the synthesis of microporous materials Atul N-directing agents in the synthesis of microporous materials. The method relies on the exposure of the sample. This method is applicable in making new materials from organic­inorganic pre- cursors and holds promise

  11. Nanowire Ultraviolet Photodetectors and Optical By Hannes Kind, Haoquan Yan, Benjamin Messer,

    E-Print Network [OSTI]

    Yang, Peidong

    of a Nd:YAG laser was used as the UV light source. Neutral density filters were used to change the incident UV light power. It was found that the photoresponse (Ipc) can be expressed by a simple power law is extremely sensitive to ultraviolet light exposure. The light-induced conductivity increase allows us

  12. Recent Experimental and Theoretical Advances in Microdrilling of Polymers with Ultraviolet Laser Beams

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Libération, F-33405 Talence, FRANCE E-mail: s.lazare@lpcm.u-bordeaux1.fr ABSTRACT Laser drilling becomes is now in progress. Keywords: Materials, laser, processing, drilling, model, profile, mechanisms, polymer1 Recent Experimental and Theoretical Advances in Microdrilling of Polymers with Ultraviolet Laser

  13. Simulation of Two-Dimensional Ultraviolet Spectroscopy of Amyloid Fibrils Darius Abramavicius,

    E-Print Network [OSTI]

    Mukamel, Shaul

    diseases. Amyloid fibrils are formed by a wide variety of peptides and proteins and can be distinguishedSimulation of Two-Dimensional Ultraviolet Spectroscopy of Amyloid Fibrils Jun Jiang, Darius, 2010 Revealing the structure and aggregation mechanism of amyloid fibrils is essential

  14. Liquid-tin-jet laser-plasma extreme ultraviolet generation P. A. C. Jansson,a)

    E-Print Network [OSTI]

    Liquid-tin-jet laser-plasma extreme ultraviolet generation P. A. C. Jansson,a) B. A. M. Hansson, O spectral signatures. The system is demonstrated using tin Sn as the target due to its strong emission materials with new spectral signatures. As an example we use tin, motivated by its current interest for EUV

  15. Signatures of the Protein Folding Pathway in Two-Dimensional Ultraviolet Spectroscopy

    E-Print Network [OSTI]

    Mukamel, Shaul

    Signatures of the Protein Folding Pathway in Two-Dimensional Ultraviolet Spectroscopy Jun Jiang of the signals provides a quantitative marker of protein folding status, accessible by both theoretical calculations and experiments. SECTION: Biophysical Chemistry and Biomolecules Protein folding is an important

  16. Applying a tapered electrode on a porous ceramic support tube by masking a band inside the tube and drawing in electrode material from the outside of the tube by suction

    DOE Patents [OSTI]

    Vasilow, T.R.; Zymboly, G.E.

    1991-12-17T23:59:59.000Z

    An electrode is deposited on a support by providing a porous ceramic support tube having an open end and closed end; masking at least one circumferential interior band inside the tube; evacuating air from the tube by an evacuation system, to provide a permeability gradient between the masked part and unmasked part of the tube; applying a liquid dispersion of solid electrode particles to the outside surface of the support tube, where liquid flows through the wall, forming a uniform coating over the unmasked support part and a tapered coating over the masked part. 2 figures.

  17. Could the Earth's surface Ultraviolet irradiance be blamed for the global warming? (II) ----Ozone layer depth reconstruction via HEWV effect

    E-Print Network [OSTI]

    Chen, Jilong; Zheng, Yujun

    2014-01-01T23:59:59.000Z

    It is suggested by Chen {\\it et al.} that the Earth's surface Ultraviolet irradiance ($280-400$ nm) could influence the Earth's surface temperature variation by "Highly Excited Water Vapor" (HEWV) effect. In this manuscript, we reconstruct the developing history of the ozone layer depth variation from 1860 to 2011 based on the HEWV effect. It is shown that the reconstructed ozone layer depth variation correlates with the observational variation from 1958 to 2005 very well ($R=0.8422$, $P>99.9\\%$). From this reconstruction, we may limit the spectra band of the surface Ultraviolet irradiance referred in HEWV effect to Ultraviolet B ($280-320$ nm).

  18. Improvements in Near-Terminator and Nocturnal Cloud Masks using Satellite Imager Data over the Atmospheric Radiation Measurement Sites

    SciTech Connect (OSTI)

    Trepte, Q.Z.; Minnis, P.; Heck, P.W.; Palikonda, R.

    2005-03-18T23:59:59.000Z

    Cloud detection using satellite measurements presents a big challenge near the terminator where the visible (VIS; 0.65 {micro}m) channel becomes less reliable and the reflected solar component of the solar infrared 3.9-{micro}m channel reaches very low signal-to-noise ratio levels. As a result, clouds are underestimated near the terminator and at night over land and ocean in previous Atmospheric Radiation Measurement (ARM) Program cloud retrievals using Geostationary Operational Environmental Satellite (GOES) imager data. Cloud detection near the terminator has always been a challenge. For example, comparisons between the CLAVR-x (Clouds from Advanced Very High Resolution Radiometer [AVHRR]) cloud coverage and Geoscience Laser Altimeter System (GLAS) measurements north of 60{sup o}N indicate significant amounts of missing clouds from AVHRR because this part of the world was near the day/night terminator viewed by AVHRR. Comparisons between MODIS cloud products and GLAS at the same regions also shows the same difficulty in the MODIS cloud retrieval (Pavolonis and Heidinger 2005). Consistent detection of clouds at all times of day is needed to provide reliable cloud and radiation products for ARM and other research efforts involving the modeling of clouds and their interaction with the radiation budget. To minimize inconsistencies between daytime and nighttime retrievals, this paper develops an improved twilight and nighttime cloud mask using GOES-9, 10, and 12 imager data over the ARM sites and the continental United States (CONUS).

  19. Synchrotron Vacuum-Ultraviolet Postionization Mass Spectrometry with Laser and Ion Probes for Intact Molecular Spatial Mapping of Lignin

    E-Print Network [OSTI]

    Takahashi, Lynelle Kazue

    2011-01-01T23:59:59.000Z

    27, 289. Thompson, M. W. Vacuum 2002, 66, 99. McPhail, D. J.Gibson, J. K. Journal of Vacuum Science and Technology 1995,Chemical Society. Vacuum ultraviolet photoionization coupled

  20. Tyrosine/Cysteine Cluster Sensitizing Human ?D-Crystallin to Ultraviolet Radiation-Induced Photoaggregation in Vitro

    E-Print Network [OSTI]

    Schafheimer, Steven Nathaniel

    Ultraviolet radiation (UVR) exposure is a major risk factor for age-related cataract, a protein-aggregation disease of the human lens often involving the major proteins of the lens, the crystallins. ?D-Crystallin (H?D-Crys) ...

  1. Final LDRD report :ultraviolet water purification systems for rural environments and mobile applications.

    SciTech Connect (OSTI)

    Banas, Michael Anthony; Crawford, Mary Hagerott; Ruby, Douglas Scott; Ross, Michael P.; Nelson, Jeffrey Scott; Allerman, Andrew Alan; Boucher, Ray

    2005-11-01T23:59:59.000Z

    We present the results of a one year LDRD program that has focused on evaluating the use of newly developed deep ultraviolet LEDs in water purification. We describe our development efforts that have produced an LED-based water exposure set-up and enumerate the advances that have been made in deep UV LED performance throughout the project. The results of E. coli inactivation with 270-295 nm LEDs are presented along with an assessment of the potential for applying deep ultraviolet LED-based water purification to mobile point-of-use applications as well as to rural and international environments where the benefits of photovoltaic-powered systems can be realized.

  2. DNA synthesis in pigmented and non-pigmented mutants of Serratia marcescens after ultra-violet irradiation

    E-Print Network [OSTI]

    Russo, Salvadore William

    1973-01-01T23:59:59.000Z

    DNA SYNTHESIS IN PIGNENTED AND NON-PIGKENTED MUTANTS OF SERRATIA MARCESCENS AFTER ULTRAVIOLET IRRADIATION A Thesis by SALVADORE NILLIAM RUSSO, JR. Submitted to the Graduate College of Texas A&M University in partial fulfillment... of the requirement for the degree of MASTER OF SCIENCE August 1973 Major Subject: Biochemistry DNA SYNTHESIS IN PIGMENTED AND NON-PIGMENTED MUTANTS OF SERRATIA MARCESCENS AFTER ULTRAVIOLET IRRADIATION A' Thesis by SALVADORE WILLIAM RUSSO, JR. Approved...

  3. The effects of selected wavelengths and energy levels of ultraviolet irradiation on the endopeptidase and hemolytic activity of Aeromonas proteolytica

    E-Print Network [OSTI]

    Lovett, David Franklin

    1972-01-01T23:59:59.000Z

    irradiation of the radiosensitive B strain of Escherichia cali induced, at a high frequency, a radiation resistance strain, which she designated as B/r. Six years later Clark (2) found that this B/r strain was not only more resistant to ultraviolet...THE EFFECTS OF SELECTED WAVELENGTHS AND ENERGY LEVELS OF ULTRAVIOLET IRRADIATION ON THE ENDOPEPTIDASE AND HEMOLYTIC ACTIVITY OF AEROMONAS PROTEOLYTICA A Thesis by DAVID FRANKLIN LOVETT Submitted to the Graduate College of Texas ASM...

  4. Efficient 13.5 nm extreme ultraviolet emission from Sn plasma irradiated by a long CO2 laser pulse

    E-Print Network [OSTI]

    Najmabadi, Farrokh

    Efficient 13.5 nm extreme ultraviolet emission from Sn plasma irradiated by a long CO2 laser pulse-band 2% bandwidth conversion efficiency CE from a CO2 laser to 13.5 nm extreme ultraviolet EUV light was investigated for Sn plasma. It was found that high in-band CE, 2.6%, is consistently obtained using a CO2 laser

  5. Ablation of solids using a femtosecond extreme ultraviolet free electron laser

    SciTech Connect (OSTI)

    Stojanovic, N.; Linde, D. von der; Sokolowski-Tinten, K.; Zastrau, U.; Perner, F.; Foerster, E.; Sobierajski, R.; Nietubyc, R.; Jurek, M.; Klinger, D.; Pelka, J.; Krzywinski, J.; Juha, L; Cihelka, J.; Velyhan, A.; Koptyaev, S.; Hajkova, V.; Chalupsky, J.; Kuba, J.; Tschentscher, T. [Institut fuer Experimentelle Physik, Universitaet Duisburg-Essen, Lotharstrasse 1, 47048 Duisburg (Germany); Institut fuer Optik und Quantenelektronik, FSU Jena, 07743 Jena (Germany); Institute of Physics, PAS, Al. Lotnikov 32/46, 02-668 Warsaw (Poland); Institute of Physics, ASCR, 182 21 Prague (Czech Republic); Czech Technical University, 115 19 Prague (Czech Republic); Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22605 Hamburg (Germany)] (and others)

    2006-12-11T23:59:59.000Z

    The ablation of solids by high energy femtosecond pulses from an extreme ultraviolet (XUV) free electron laser has been investigated using picosecond optical imaging. The time-resolved measurements are supplemented by an analysis of the permanent structural surface modifications. Compared with femtosecond optical excitation, distinct differences in the material response are found which are attributed to the increased penetration depth of the XUV radiation and the absence of any absorption nonlinearities.

  6. Ultraviolet spectrophotometry of close binary systems: CV Velorum, RS Vulpeculae and DH Cephei

    SciTech Connect (OSTI)

    Wu, C.C.; Eaton, J.A.

    1981-01-01T23:59:59.000Z

    The ultraviolet magnitudes of CV Velorum, RS Vulpeculae and DH Cephei are reported. Aside from twenty observations of CV Velorum which fell inside the primary eclipse, all data were obtained for phases outside eclipse. Observations were made with the University of Greningen experiment on board the Astronomical Netherlands Satellite. The instrument consists of a 22 cm aperture Cassegrain telescope followed by a five channel grating spectrophotometer. Instrument operation modes and data correction procedures are briefly described.

  7. Damage of multilayer optics with varying capping layers induced by focused extreme ultraviolet beam

    SciTech Connect (OSTI)

    Jody Corso, Alain; Nicolosi, Piergiorgio; Nardello, Marco; Guglielmina Pelizzo, Maria [National Research Council of Italy, Institute for Photonics and Nanotechnology, via Trasea 7, 35131 Padova (Italy) [National Research Council of Italy, Institute for Photonics and Nanotechnology, via Trasea 7, 35131 Padova (Italy); Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy); Zuppella, Paola [National Research Council of Italy, Institute for Photonics and Nanotechnology, via Trasea 7, 35131 Padova (Italy)] [National Research Council of Italy, Institute for Photonics and Nanotechnology, via Trasea 7, 35131 Padova (Italy); Barkusky, Frank [Laser-Laboratorium Goettingen e.V, Goettingen (Germany) [Laser-Laboratorium Goettingen e.V, Goettingen (Germany); KLA-Tencor, 5 Technology Dr., Milpitas, California 95035 (United States); Mann, Klaus; Mueller, Matthias [Laser-Laboratorium Goettingen e.V, Goettingen (Germany)] [Laser-Laboratorium Goettingen e.V, Goettingen (Germany)

    2013-05-28T23:59:59.000Z

    Extreme ultraviolet Mo/Si multilayers protected by capping layers of different materials were exposed to 13.5 nm plasma source radiation generated with a table-top laser to study the irradiation damage mechanism. Morphology of single-shot damaged areas has been analyzed by means of atomic force microscopy. Threshold fluences were evaluated for each type of sample in order to determine the capability of the capping layer to protect the structure underneath.

  8. Heats of vaporization of room temperature ionic liquids by tunable vacuum ultraviolet photoionization

    SciTech Connect (OSTI)

    Chambreau, Steven D.; Vaghjiani, Ghanshyam L.; To, Albert; Koh, Christine; Strasser, Daniel; Kostko, Oleg; Leone, Stephen R.

    2009-11-25T23:59:59.000Z

    The heats of vaporization of the room temperature ionic liquids (RTILs) N-butyl-N-methylpyrrolidinium bistrifluorosulfonylimide, N-butyl-N-methylpyrrolidinium dicyanamide, and 1-butyl-3-methylimidazolium dicyanamide are determined using a heated effusive vapor source in conjunction with single photon ionization by a tunable vacuum ultraviolet synchrotron source. The relative gas phase ionic liquid vapor densities in the effusive beam are monitored by clearly distinguished dissociative photoionization processes via a time-of-flight mass spectrometer at a tunable vacuum ultraviolet beamline 9.0.2.3 (Chemical Dynamics Beamline) at the Advanced Light Source synchrotron facility. Resulting in relatively few assumptions, through the analysis of both parent cations and fragment cations, the heat of vaporization of N-butyl-N-methylpyrrolidinium bistrifluorosulfonylimide is determined to be Delta Hvap(298.15 K) = 195+-19 kJ mol-1. The observed heats of vaporization of 1-butyl-3-methylimidazolium dicyanamide (Delta Hvap(298.15 K) = 174+-12 kJ mol-1) and N-butyl-N-methylpyrrolidinium dicyanamide (Delta Hvap(298.15 K) = 171+-12 kJ mol-1) are consistent with reported experimental values using electron impact ionization. The tunable vacuum ultraviolet source has enabled accurate measurement of photoion appearance energies. These appearance energies are in good agreement with MP2 calculations for dissociative photoionization of the ion pair. These experimental heats of vaporization, photoion appearance energies, and ab initio calculations corroborate vaporization of these RTILs as intact cation-anion ion pairs.

  9. Proliferative and toxic effects of ultraviolet light and inflammation on epidermal pigment cells

    SciTech Connect (OSTI)

    Nordlund, J.J.; Ackles, A.E.; Traynor, F.F.

    1981-10-01T23:59:59.000Z

    The ear of the mouse is useful for studying the effects of ultraviolet light on epidermal pigment cells. The quantity of light penetrating into the skin causing an inflammatory response can be assessed easily by measuring with an engineering calipers the swelling of the ear. The inflammatory response of the ear exhibits a linear relationship to the dose of light delivered. We observed that doses of shortwave ultraviolet light which are noninflammatory when repeated at daily intervals induce moderate to severe inflammation. Small doses of psoralen and prolonged exposure to UVA (PUVA) were more inflammatory than larger amounts of psoralen and short exposure to light. Doses of shortwave ultraviolet light and PUVA which produce only a minimal inflammation of the skin stimulate the proliferation of epidermal melanocytes. In contrast, PUVA in doses sufficiently large to cause a marked inflammatory reaction in the skin seems injurious to pigment cells and kills them or causes only a minimal proliferative response. The inflammatory reaction itself does not seem to stimulate or inhibit the proliferation of melanocytes. Prostaglandins A, E, and F2 alpha have no effect on the proliferation of epidermal pigment cells. In contrast, dimethyl sulfoxide (DMSO) and allergic contact dermatitis increase the numerical density of pigment cells. Steroids may block the function of the enzyme tyrosinase. Our experiments indicate that pigment cells, like many other varieties of cells, are susceptible to injury and can be killed at least by large doses of PUVA.

  10. Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography

    SciTech Connect (OSTI)

    Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-07-07T23:59:59.000Z

    The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6° through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350?mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

  11. Sandia National Laboratories: MASK

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the extent to which control strategies can increase the power produced by resonant wave-energy converter (WEC) devices. Many theoretical studies have shown a promise that...

  12. 10^{-7} contrast ratio at 4.5Lambda/D: New results obtained in laboratory experiments using nano-fabricated coronagraph and multi-Gaussian shaped pupil masks

    E-Print Network [OSTI]

    Abhijit Chakraborty; Laird A. Thompson; Mike Rogosky

    2005-04-05T23:59:59.000Z

    We present here new experimental results on high contrast imaging of 10^{-7} at 4.5Lambda/D (Lambda = 0.820 microns) by combining a circular focal plane mask (coronagraph) of 2.5Lambda/D diameter and a multi-Gaussian pupil plane mask. Both the masks were fabricated on very high surface quality (Lambda/30) BK7 optical substrates using nano-fabrication techniques of photolithography and metal lift-off. This process ensured that the shaped masks have a useable edge roughness better than Lambda/4 (rms error better than 0.2 microns), a specification that is necessary to realize the predicted theoretical limits of any mask design. Though a theoretical model predicts a contrast level of 10^{-12}, the background noise of the observed images was speckle dominated which reduced the contrast level to 4x10^{-7} at 4.5Lambda/D. The optical setup was built on the University of Illinois Seeing Improvement System (UnISIS) optics table which is at the Coude focus of the 2.5-m telescope of the Mt. Wilson Observatory. We used a 0.820 micron laser source coupled with a 5 micron single-mode fiber to simulate an artificial star on the optical test bench of UnISIS.

  13. Infrared and Ultraviolet QCD dynamics with quark mass for J=0,1 mesons

    E-Print Network [OSTI]

    Nicholas Souchlas

    2010-06-04T23:59:59.000Z

    By using a previously developed phenomenological kernel for the study of the light quark QCD sector and dynamical chiral symmetry breaking effects we will examine the relative infrared and ultraviolet QCD dynamics for J=0,1 meson properties. For the same reasons we extend and explore a quark mass depended generalization of the kernel in the heavy quark region and we also compare with the original model. The relation between the dynamics of the quark propagator and the effective kernel with the J=0,1 QQ and qQ mesons and quarks Compton size is also discussed.

  14. Evolution of laser-produced Sn extreme ultraviolet source diameter for high-brightness source

    SciTech Connect (OSTI)

    Roy, Amitava, E-mail: roy@fzu.cz, E-mail: aroy@barc.gov.in [Department of Advanced Interdisciplinary Sciences, Center for Optical Research and Education (CORE), Utsunomiya University, Utsunomiya, Tochigi 321-8585 (Japan); HiLASE Centre, Institute of Physics ASCR, v.v.i., Za Radnicí 828, 25241 Dolní B?ežany (Czech Republic); Arai, Goki; Hara, Hiroyuki; Higashiguchi, Takeshi, E-mail: higashi@cc.utsunomiya-u.ac.jp [Department of Advanced Interdisciplinary Sciences, Center for Optical Research and Education (CORE), Utsunomiya University, Utsunomiya, Tochigi 321-8585 (Japan); Ohashi, Hayato [Graduate School of Science and Engineering for Research, University of Toyama, Toyama, Toyama 930-8555 (Japan); Sunahara, Atsushi [Institute for Laser Technology, 2-6 Yamada-oka, Suita, Osaka 565-0871 (Japan); Li, Bowen [School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000 (China); School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Dunne, Padraig; O'Sullivan, Gerry [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Miura, Taisuke; Mocek, Tomas; Endo, Akira [HiLASE Centre, Institute of Physics ASCR, v.v.i., Za Radnicí 828, 25241 Dolní B?ežany (Czech Republic)

    2014-08-18T23:59:59.000Z

    We have investigated the effect of irradiation of solid Sn targets with laser pulses of sub-ns duration and sub-mJ energy on the diameter of the extreme ultraviolet (EUV) emitting region and source conversion efficiency. It was found that an in-band EUV source diameter as low as 18??m was produced due to the short scale length of a plasma produced by a sub-ns laser. Most of the EUV emission occurs in a narrow region with a plasma density close to the critical density value. Such EUV sources are suitable for high brightness and high repetition rate metrology applications.

  15. Highly reproducible and reliable metal/graphene contact by ultraviolet-ozone treatment

    SciTech Connect (OSTI)

    Li, Wei [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Hacker, Christina A.; Cheng, Guangjun; Hight Walker, A. R.; Richter, Curt A.; Gundlach, David J., E-mail: david.gundlach@nist.gov, E-mail: liangxl@pku.edu.cn [Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Liang, Yiran; Tian, Boyuan; Liang, Xuelei, E-mail: david.gundlach@nist.gov, E-mail: liangxl@pku.edu.cn; Peng, Lianmao [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China)

    2014-03-21T23:59:59.000Z

    Resist residue from the device fabrication process is a significant source of contamination at the metal/graphene contact interface. Ultraviolet Ozone (UVO) treatment is proven here, by X-ray photoelectron spectroscopy and Raman measurement, to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices that were fabricated by using UVO treatment of the metal/graphene contact region show that stable and reproducible low resistance metal/graphene contacts are obtained and the electrical properties of the graphene channel remain unaffected.

  16. Chemo-physical properties of renal capsules under ultraviolet-c exposure

    SciTech Connect (OSTI)

    Baghapour, Sh.; Parvin, P., E-mail: parvin@aut.ac.ir; Mokhtari, S. [Department of Physics, Amirkabir University of Technology, P.O.Box 15875-4413 Tehran (Iran, Islamic Republic of); Reyhani, A.; Mortazavi, S. Z. [Department of Physics, Imam Khomeini International University, P.O.Box 34149-16818 Qazvin (Iran, Islamic Republic of); Amjadi, A. [Department of Physics, Sharif University of Technology, P.O.Box 11365-9567, Tehran (Iran, Islamic Republic of)

    2014-08-07T23:59:59.000Z

    The renal capsule tissue of lamb was irradiated with ultraviolet-C light and the treated samples were analyzed by uniaxial tensile test, dynamic mechanical analysis, attenuated total reflectance Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and contact angle measurements. It was shown that the skin cross-linking is dominant in low doses in accordance with the contact angle assessment. Conversely, the strong bulk degradation takes place at high doses. Similarly, the bulk cross-linking affects the mechanical tests as to enhance the stiffness at low doses, whereas strong degradation occurs at high doses that mainly arises from the strong bulk chain scission.

  17. Total to Selective Extinction Ratios and Visual Extinctions from Ultraviolet Data

    E-Print Network [OSTI]

    Anna Geminale; Piotr Popowski

    2004-09-21T23:59:59.000Z

    We present determinations of the total to selective extinction ratio R_V and visual extinction A_V values for Milky Way stars using ultraviolet color excesses. We extend the analysis of Gnacinski and Sikorski (1999) by using non-equal weights derived from observational errors. We present a detailed discussion of various statistical errors. In addition, we estimate the level of systematic errors by considering different normalization of the extinction curve adopted by Wegner (2002). Our catalog of 782 R_V and A_V values and their errors is available in the electronic form on the World Wide Web.

  18. Rare-earth plasma extreme ultraviolet sources at 6.5-6.7 nm

    SciTech Connect (OSTI)

    Otsuka, Takamitsu; Higashiguchi, Takeshi; Yugami, Noboru; Yatagai, Toyohiko [Department of Advanced Interdisciplinary Sciences, Center for Optical Research and Education (CORE), Utsunomiya University, Yoto 7-1-2, Utsunomiya, Tochigi 321-8585 (Japan); Kilbane, Deirdre; White, John; Dunne, Padraig; O'Sullivan, Gerry [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Jiang, Weihua [Department of Electrical Engineering, Nagaoka University of Technology, Kami-tomiokamachi 1603-1, Nagaoka, Niigata 940-2188 (Japan); Endo, Akira [Forschungszentrum Dresden, Bautzner Landstrs. 400, D-01328 Dresden (Germany)

    2010-09-13T23:59:59.000Z

    We have demonstrated a laser-produced plasma extreme ultraviolet source operating in the 6.5-6.7 nm region based on rare-earth targets of Gd and Tb coupled with a Mo/B{sub 4}C multilayer mirror. Multiply charged ions produce strong resonance emission lines, which combine to yield an intense unresolved transition array. The spectra of these resonant lines around 6.7 nm (in-band: 6.7 nm {+-}1%) suggest that the in-band emission increases with increased plasma volume by suppressing the plasma hydrodynamic expansion loss at an electron temperature of about 50 eV, resulting in maximized emission.

  19. Note: Enhancement of the extreme ultraviolet emission from a potassium plasma by dual laser irradiation

    SciTech Connect (OSTI)

    Higashiguchi, Takeshi, E-mail: higashi@cc.utsunomiya-u.ac.jp; Yamaguchi, Mami; Otsuka, Takamitsu; Nagata, Takeshi [Department of Advanced Interdisciplinary Sciences and Center for Optical Research (CORE), Utsunomiya University, Yoto 7-1-2, Utsunomiya, Tochigi 321-8585 Japan (Japan); Ohashi, Hayato [Graduate School of Science and Engineering for Research, University of Toyama, Toyama, Toyama 930-8555 (Japan); Li, Bowen [School of Nuclear Science and Technology, Lanzhou University, Lanzhou, 730000 (China); School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); D’Arcy, Rebekah; Dunne, Padraig; O’Sullivan, Gerry [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland)

    2014-09-15T23:59:59.000Z

    Emission spectra from multiply charged potassium ions ranging from K{sup 3+} to K{sup 5+} have been obtained in the extreme ultraviolet (EUV) spectral region. A strong emission feature peaking around 38?nm, corresponding to a photon energy of 32.6 eV, is the dominant spectral feature at time-averaged electron temperatures in the range of 8?12 eV. The variation of this emission with laser intensity and the effects of pre-pulses on the relative conversion efficiency (CE) have been explored experimentally and indicate that an enhancement of about 30% in EUV CE is readily attainable.

  20. Viability of Cladosporium herbarum spores under 157 nm laser and vacuum ultraviolet irradiation, low temperature (10 K) and vacuum

    SciTech Connect (OSTI)

    Sarantopoulou, E., E-mail: esarant@eie.gr; Stefi, A.; Kollia, Z.; Palles, D.; Cefalas, A. C. [National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, 48 Vassileos Constantinou Avenue, Athens 11635 (Greece); Petrou, P. S.; Bourkoula, A.; Koukouvinos, G.; Kakabakos, S. [N.C.S.R. “Demokritos”, Institute for Nuclear and Radiological Sciences, Energy, Technology and Safety, Patriarchou Gregoriou Str. Aghia Paraskevi, Athens 15310 (Greece); Velentzas, A. D. [University of Athens, Faculty of Biology, Department of Cell Biology and Biophysics, Athens 15784 (Greece)

    2014-09-14T23:59:59.000Z

    Ultraviolet photons can damage microorganisms, which rarely survive prolonged irradiation. In addition to the need for intact DNA, cell viability is directly linked to the functionality of the cell wall and membrane. In this work, Cladosporium herbarum spore monolayers exhibit high viability (7%) when exposed to 157 nm laser irradiation (412 kJm?²) or vacuum-ultraviolet irradiation (110–180 nm) under standard pressure and temperature in a nitrogen atmosphere. Spore viability can be determined by atomic-force microscopy, nano-indentation, mass, ?-Raman and attenuated reflectance Fourier-transform far-infrared spectroscopies and DNA electrophoresis. Vacuum ultraviolet photons cause molecular damage to the cell wall, but radiation resistance in spores arises from the activation of a photon-triggered signaling reaction, expressed via the exudation of intracellular substances, which, in combination with the low penetration depth of vacuum-ultraviolet photons, shields DNA from radiation. Resistance to phototoxicity under standard conditions was assessed, as was resistance to additional environmental stresses, including exposure in a vacuum, under different rates of change of pressure during pumping time and low (10 K) temperatures. Vacuum conditions were far more destructive to spores than vacuum-ultraviolet irradiation, and UV-B photons were two orders of magnitude more damaging than vacuum-ultraviolet photons. The viability of irradiated spores was also enhanced at 10 K. This work, in addition to contributing to the photonic control of the viability of microorganisms exposed under extreme conditions, including decontamination of biological warfare agents, outlines the basis for identifying bio-signaling in vivo using physical methodologies.

  1. ultraviolet | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and early disease diagnostic applications. Citation: Lee AC, D Du, B Chen, CK Heng, TM Lim, and Y Lin.2014."Electrochemical detection of leukemia oncogenes using...

  2. EMSL - ultraviolet

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    class"field-item even" property"schema:citation">Lee AC, D Du, B Chen, CK Heng, TM Lim, and Y Lin.2014."Electrochemical detection of leukemia oncogenes using...

  3. Vacuum-Ultraviolet (VUV) Photoionization of Small Methanol and Methanol-Water Clusters

    SciTech Connect (OSTI)

    Kostko, Oleg; Belau, Leonid; Wilson, Kevin R.; Ahmed, Musahid

    2008-04-24T23:59:59.000Z

    In this work, we report on the vacuum-ultraviolet (VUV) photoionization of small methanol and methanol-water clusters. Clusters of methanol with water are generated via co-expansion of the gas phase constituents in a continuous supersonic jet expansion of methanol and water seeded in Ar. The resulting clusters are investigated by single photon ionization with tunable vacuum-ultraviolet synchrotron radiation and mass analyzed using reflectron mass spectrometry. Protonated methanol clusters of the form (CH3OH)nH+(n = 1-12) dominate the mass spectrum below the ionization energy of the methanol monomer. With an increase in water concentration, small amounts of mixed clusters of the form (CH3OH n(H2O)H+ (n = 2-11) are detected. The only unprotonated species observed in this work are the methanol monomer and dimer. Appearance energies are obtained from the photoionization efficiency (PIE) curves for CH3OH+, (CH3OH)2+, (CH3OH)nH+ (n = 1-9), and (CH3OH)n(H2O)H+ (n = 2-9) as a function of photon energy. With an increasein the water content in the molecular beam, there is an enhancement of photoionization intensity for the methanol dimer and protonated methanol monomer at threshold. These results are compared and contrasted to previous experimental observations.

  4. Laser Desorption Postionization Mass Spectrometry of Antibiotic-Treated Bacterial Biofilms using Tunable Vacuum Ultraviolet Radiation

    SciTech Connect (OSTI)

    Gasper, Gerald L.; Takahashi, Lynelle K.; Zhou, Jia; Ahmed, Musahid; Moore, Jerry F.; Hanley, Luke

    2010-08-04T23:59:59.000Z

    Laser desorption postionization mass spectrometry (LDPI-MS) with 8.0 ? 12.5 eV vacuum ultraviolet synchrotron radiation is used to single photon ionize antibiotics andextracellular neutrals that are laser desorbed both neat and from intact bacterial biofilms. Neat antibiotics are optimally detected using 10.5 eV LDPI-MS, but can be ionized using 8.0 eV radiation, in agreement with prior work using 7.87 eV LDPI-MS. Tunable vacuum ultraviolet radiation also postionizes laser desorbed neutrals of antibiotics and extracellular material from within intact bacterial biofilms. Different extracellular material is observed by LDPI-MS in response to rifampicin or trimethoprim antibiotic treatment. Once again, 10.5 eV LDPI-MS displays the optimum trade-off between improved sensitivity and minimum fragmentation. Higher energy photons at 12.5 eV produce significant parent ion signal, but fragment intensity and other low mass ions are also enhanced. No matrix is added to enhance desorption, which is performed at peak power densities insufficient to directly produce ions, thus allowing observation of true VUV postionization mass spectra of antibiotic treated biofilms.

  5. Quasi-Coherent Oscillations in the Extreme Ultraviolet Flux of the Dwarf Nova SS Cygni

    E-Print Network [OSTI]

    Christopher W. Mauche

    1996-03-18T23:59:59.000Z

    Quasi-coherent oscillations have been detected in the extreme ultraviolet flux of the dwarf nova SS Cygni during observations with the Extreme Ultraviolet Explorer satellite of the rise and plateau phases of an anomalous outburst in 1993 August and a normal outburst in 1994 June/July. On both occasions, the oscillation turned on during the rise to outburst and persisted throughout the observation. During the 1993 outburst, the period of the oscillation fell from 9.3 s to 7.5 s over an interval of 4.4 days; during the 1994 outburst, the period fell from 8.9 s to 7.19 s (the shortest period ever observed in SS Cyg, or any other dwarf nova) within less than a day, and then rose to 8.0 s over an interval of 8.0 days. For both outbursts, the period $P$ of the oscillation was observed to correlate with the 75--120 \\AA \\ count rate $I_{\\rm EUV}$ according to $P\\propto I_{\\rm EUV}^{-0.094}$. A magnetospheric model is considered to reproduce this variation. It is found that an effective high-order multipole field is required, and that the field strength at the surface of the white dwarf is 0.1--1 MG. Such a field strength is at the lower extreme of those measured or inferred for bona fide magnetic cataclysmic variables.

  6. Support of the balloon-borne ultraviolet stellar spectrograph. Final report

    SciTech Connect (OSTI)

    Timothy, J.G.

    1986-05-01T23:59:59.000Z

    A (256 x 1024)-pixel imaging ultraviolet Multi-mode Microchannel Array (MAMA) detector system for flight was fabricated, evaluated, and environmentally tested for flight on the Balloon Borne Ultraviolet Stellar Spectrograph (BUSS). The goal of the program was to replace the existing SEC Vidicon with the pulse-counting MAMA detector in order to, first, improve the overall sensitivity of the BUSS telescope and spectrograph for observations of stars down to m sub v = 7 and fainter, and, second, to improve the spectral resolution and wavelength accuracy by eliminating the image drifts in the Vidicon caused by magnetic field effects. A sealed MAMA detector tube structure employing a remotely processed photocathode mounted on a window in proximity focus with the front face of the MCP was developed to avoid contamination produced by a noisy and unstable device. The configuration of the BUSS detector system in its flight ready configuration is shown. The quantum efficiency curve for the semi-transparent Cs/sub 2/Te photocathode is also shown.

  7. Constraints to the magnetospheric properties of T Tauri stars - II. The Mg II ultraviolet feature

    E-Print Network [OSTI]

    Lopez-Martinez, Fatima

    2015-01-01T23:59:59.000Z

    The atmospheric structure of T Tauri Stars (TTSs) and its connection with the large scale outflow is poorly known. Neither the effect of the magnetically mediated inter- action between the star and the disc in the stellar atmosphere is well understood. The Mg II multiplet is a fundamental tracer of TTSs atmospheres and outflows, and is the strongest feature in the near-ultraviolet spectrum of TTSs. The International Ultraviolet Explorer and Hubble Space Telescope data archives provide a unique set to study the main physical compounds contributing to the line profile and to derive the properties of the line formation region. The Mg II profiles of 44 TTSs with resolution 13,000 to 30,000 are available in these archives. In this work, we use this data set to measure the main observables: flux, broadening, asymmetry, terminal velocity of the outflow, and the velocity of the Discrete Absorption Components. For some few sources repeated observations are available and variability has been studied. There is a warm wi...

  8. Melanocytes can absorb ultraviolet radiation (UVR) and survive con-siderable genotoxic stress. The skin is the main barrier to the exter-

    E-Print Network [OSTI]

    Cai, Long

    to the appearance of skin and provide protection from damage by ultraviolet radiation. Pigmentation mutantsMelanocytes can absorb ultraviolet radiation (UVR) and survive con- siderable genotoxic stress. Thisreviewsummarizeshowpigmentationisregulatedatthemolecu- lar level and how the tanning response provides protection against dam- age and skin cancer. We

  9. High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

    E-Print Network [OSTI]

    Wu, Y.; Hasan, T.; Li, X.; Xu, P.; Wang, Y.; Shen, X.; Liu, X.; Yang, Q.

    2015-02-05T23:59:59.000Z

    We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5?nm. The dominant emission, detectable...

  10. Self-heating in a GaN based heterostructure field effect transistor: Ultraviolet and visible Raman measurements and simulations

    E-Print Network [OSTI]

    Holtz, Mark

    Self-heating in a GaN based heterostructure field effect transistor: Ultraviolet and visible Raman online 8 December 2006 We report direct self-heating measurements for AlGaN/GaN heterostructure field density can be commensurately high, collisional energy loss from electrons to the crystal leads to self-heating

  11. Interaction of methanol and water on MgO,,100... studied by ultraviolet photoelectron and metastable impact electron spectroscopies

    E-Print Network [OSTI]

    Goodman, Wayne

    Interaction of methanol and water on MgO,,100... studied by ultraviolet photoelectron; accepted 27 October 1998 The coadsorption of methanol (CH3OH) and water (D2O) on the MgO 100 /Mo 100 photoelectron spectroscopy UPS HeI , and by thermal programmed desorption TPD . Methanol wets the MgO surface

  12. Devices useful for vacuum ultraviolet beam characterization including a movable stage with a transmission grating and image detector

    DOE Patents [OSTI]

    Gessner, Oliver; Kornilov, Oleg A; Wilcox, Russell B

    2013-10-29T23:59:59.000Z

    The invention provides for a device comprising an apparatus comprising (a) a transmission grating capable of diffracting a photon beam into a diffracted photon output, and (b) an image detector capable of detecting the diffracted photon output. The device is useful for measuring the spatial profile and diffraction pattern of a photon beam, such as a vacuum ultraviolet (VUV) beam.

  13. DO THE INFRARED EMISSION FEATURES NEED ULTRAVIOLET EXCITATION? THE POLYCYCLIC AROMATIC HYDROCARBON MODEL IN UV-POOR REFLECTION NEBULAE

    E-Print Network [OSTI]

    Draine, Bruce T.

    '' PAHs in reflection nebulae near stars as cool as Teff ¼ 3000 K can result in observable emis- sion at 6DO THE INFRARED EMISSION FEATURES NEED ULTRAVIOLET EXCITATION? THE POLYCYCLIC AROMATIC HYDROCARBON MODEL IN UV-POOR REFLECTION NEBULAE Aigen Li and B. T. Draine Department of Astrophysical Sciences

  14. Vacuum ultraviolet mass-analyzed threshold ionization spectroscopy of benzene: Vibrational analysis of C6H6

    E-Print Network [OSTI]

    Kim, Myung Soo

    Vacuum ultraviolet mass-analyzed threshold ionization spectroscopy of benzene: Vibrational analysis-photon spectra agrees with the previous suggestion that the geometry of benzene cation in the ground electronic. INTRODUCTION Benzene cation has been the focus of an intensive re- search effort, both experimental1

  15. Effects of PGF{sub 2{alpha}} on human melanocytes and regulation of the FP receptor by ultraviolet radiation

    SciTech Connect (OSTI)

    Scott, Glynis [Department of Dermatology, University of Rochester School of Medicine, Box 697, 601 Elmwood Avenue, Rochester, NY 14642 (United States)]. E-mail: Glynis_Scott@urmc.rochester.edu; Jacobs, Stacey [Department of Dermatology, University of Rochester School of Medicine, Box 697, 601 Elmwood Avenue, Rochester, NY 14642 (United States); Leopardi, Sonya [Department of Dermatology, University of Rochester School of Medicine, Box 697, 601 Elmwood Avenue, Rochester, NY 14642 (United States); Anthony, Frank A. [Schering-Plough HealthCare Products Inc., Memphis TN (United States); Learn, Doug [Charles River DDS, Argus Division, Horsham, PA (United States); Malaviya, Rama [University of Medicine and Dentistry, RWJMS, New Brunswick, NJ (United States); Pentland, Alice [Department of Dermatology, University of Rochester School of Medicine, Box 697, 601 Elmwood Avenue, Rochester, NY 14642 (United States)

    2005-04-01T23:59:59.000Z

    Prostaglandins are potent lipid hormones that activate multiple signaling pathways resulting in regulation of cellular growth, differentiation, and apoptosis. In the skin, prostaglandins are rapidly released by keratinocytes following ultraviolet radiation and are chronically present in inflammatory skin lesions. We have shown previously that melanocytes, which provide photoprotection to keratinocytes through the production of melanin, express several receptors for prostaglandins, including the PGE{sub 2} receptors EP{sub 1} and EP{sub 3} and the PGF{sub 2{alpha}} receptor FP, and that PGF{sub 2{alpha}} stimulates melanocyte dendricity. We now show that PGF{sub 2{alpha}} stimulates the activity and expression of tyrosinase, the rate-limiting enzyme in melanin synthesis. Analysis of FP receptor regulation showed that the FP receptor is regulated by ultraviolet radiation in melanocytes in vitro and in human skin in vivo. We also show that ultraviolet irradiation stimulates production of PGF{sub 2{alpha}} by melanocytes. These results show that PGF{sub 2{alpha}} binding to the FP receptor activates signals that stimulate a differentiated phenotype (dendricity and pigmentation) in melanocytes. The regulation of the FP receptor and the stimulation of production of PGF{sub 2{alpha}} in melanocytes in response to ultraviolet radiation suggest that PGF{sub 2{alpha}} could act as an autocrine factor for melanocyte differentiation.

  16. Distinct Ultraviolet-Signaling Pathways in Bean Leaves. DNA Damage Is Associated with -1,3-Glucanase Gene

    E-Print Network [OSTI]

    Leubner, Gerhard

    Distinct Ultraviolet-Signaling Pathways in Bean Leaves. DNA Damage Is Associated with -1 (UV-B; 280­320 nm) radiation in primary leaves of French bean (Phaseolus vulgaris to the expression of bean class I Glu ( Glu I). In contrast to other proteins of the family of pathogenesis

  17. Interferometric at-wavelength flare characterization of EUV optical systems

    DOE Patents [OSTI]

    Naulleau, Patrick P. (Oakland, CA); Goldberg, Kenneth Alan (Berkeley, CA)

    2001-01-01T23:59:59.000Z

    The extreme ultraviolet (EUV) phase-shifting point diffraction interferometer (PS/PDI) provides the high-accuracy wavefront characterization critical to the development of EUV lithography systems. Enhancing the implementation of the PS/PDI can significantly extend its spatial-frequency measurement bandwidth. The enhanced PS/PDI is capable of simultaneously characterizing both wavefront and flare. The enhanced technique employs a hybrid spatial/temporal-domain point diffraction interferometer (referred to as the dual-domain PS/PDI) that is capable of suppressing the scattered-reference-light noise that hinders the conventional PS/PDI. Using the dual-domain technique in combination with a flare-measurement-optimized mask and an iterative calculation process for removing flare contribution caused by higher order grating diffraction terms, the enhanced PS/PDI can be used to simultaneously measure both figure and flare in optical systems.

  18. Delayed Ultrafast X-ray Auger Probing (DUXAP) of Nucleobase Ultraviolet Photoprotection

    E-Print Network [OSTI]

    McFarland, B K; Miyabe, S; Tarantelli, F; Aguilar, A; Berrah, N; Bostedt, C; Bozek, J; Bucksbaum, P H; Castagna, J C; Coffee, R; Cryan, J; Fang, L; Feifel, R; Gaffney, K; Glownia, J; Martinez, T; Mucke, M; Murphy, B; Natan, A; Osipov, T; Petrovic, V; Schorb, S; Schultz, Th; Spector, L; Swiggers, M; Tenney, I; Wang, S; White, W; White, J; Gühr, M

    2013-01-01T23:59:59.000Z

    We present a new method for ultrafast spectroscopy of molecular photoexcited dynamics. The technique uses a pair of femtosecond pulses: a photoexcitation pulse initiating excited state dynamics followed by a soft x-ray (SXR) probe pulse that core ionizes certain atoms inside the molecule. We observe the Auger decay of the core hole as a function of delay between the photoexcitation and SXR pulses. The core hole decay is particularly sensitive to the local valence electrons near the core and shows new types of propensity rules, compared to dipole selection rules in SXR absorption or emission spectroscopy. We apply the delayed ultrafast x-ray Auger probing (DUXAP) method to the specific problem of nucleobase photoprotection to demonstrate its potential. The ultraviolet photoexcited \\pi\\pi* states of nucleobases are prone to chemical reactions with neighboring bases. To avoid this, the single molecules funnel the \\pi\\pi* population to lower lying electronic states on an ultrafast timescale under violation of the...

  19. Ultraviolet stimulated electron source for use with low energy plasma instrument calibration

    SciTech Connect (OSTI)

    Henderson, Kevin; Harper, Ron; Funsten, Herb; MacDonald, Elizabeth [Space Science and Applications, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2012-07-15T23:59:59.000Z

    We have developed and demonstrated a versatile, compact electron source that can produce a mono-energetic electron beam up to 50 mm in diameter from 0.1 to 30 keV with an energy spread of <10 eV. By illuminating a metal cathode plate with a single near ultraviolet light emitting diode, a spatially uniform electron beam with 15% variation over 1 cm{sup 2} can be generated. A uniform electric field in front of the cathode surface accelerates the electrons into a beam with an angular divergence of <1 Degree-Sign at 1 keV. The beam intensity can be controlled from 10 to 10{sup 9} electrons cm{sup -2} s{sup -1}.

  20. Dynamics of the solar chromosphere. V. High-frequency modulation in ultraviolet image sequences from TRACE

    E-Print Network [OSTI]

    A. G. de Wijn; R. J. Rutten; T. D. Tarbell

    2007-06-13T23:59:59.000Z

    We search for signatures of high-frequency oscillations in the upper solar photosphere and low chromosphere in the context of acoustic heating of outer stellar atmospheres. We use ultraviolet image sequences of a quiet center-disk area from the Transition Region and Coronal Explorer (TRACE) mission which were taken with strict cadence regularity. The latter permits more reliable high-frequency diagnosis than in earlier work. Spatial Fourier power maps, spatially averaged coherence and phase-difference spectra, and spatio-temporal k-f decompositions all contain high-frequency features that at first sight seem of considerable intrinsic interest but actually are more likely to represent artifacts of different nature. Spatially averaged phase difference measurement provides the most sensitive diagnostic and indicates the presence of acoustic modulation up to f=20 mHz (periods down to 50 seconds) in internetwork areas.

  1. Functionalization of carbon nanotubes by argon plasma-assisted ultraviolet grafting

    SciTech Connect (OSTI)

    Yan, Y.H.; Chan-Park, M.B.; Zhou, Q.; Li, C.M.; Yue, C.Y. [School of Mechanical and Aerospace Engineering and School of Chemical and Biomedical Engineering, Nanyang Technological University, Singapore 639798 (Singapore); School of Chemical and Biomedical Engineering, Nanyang Technological University, Singapore 639798 (Singapore); School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2005-11-21T23:59:59.000Z

    We have demonstrated the functionalization of single-wall carbon nanotubes (SWNTs) by argon (Ar) plasma-assisted ultraviolet (UV) grafting of 1-vinylimidazole (VZ). The Ar plasma treatment generates defect sites at the tube ends and sidewalls, which act as the active sites for the subsequent UV grafting of VZ monomer. Atomic force microscopy analyses indicate that the original nanotube bundles exfoliate to individual tubes after the VZ grafting. By control of the deposited energy of Ar plasma treatment (200 W) and treatment time (5 min), no visible chopping of the functionalized SWNT was observed. This method may be extended to other vinyl monomers and offers another diverse way of sidewall functionalization of SWNT.

  2. Extreme Ultraviolet Imaging of Three-dimensional Magnetic Reconnection in a Solar Eruption

    E-Print Network [OSTI]

    Sun, J Q; Ding, M D; Guo, Y; Priest, E R; Parnell, C E; Edwards, S J; Zhang, J; Chen, P F; Fang, C

    2015-01-01T23:59:59.000Z

    Magnetic reconnection, a change of magnetic field connectivity, is a fundamental physical process in which magnetic energy is released explosively. It is responsible for various eruptive phenomena in the universe. However, this process is difficult to observe directly. Here, the magnetic topology associated with a solar reconnection event is studied in three dimensions (3D) using the combined perspectives of two spacecraft. The sequence of extreme ultraviolet (EUV) images clearly shows that two groups of oppositely directed and non-coplanar magnetic loops gradually approach each other, forming a separator or quasi-separator and then reconnecting. The plasma near the reconnection site is subsequently heated from $\\sim$1 to $\\ge$5 MK. Shortly afterwards, warm flare loops ($\\sim$3 MK) appear underneath the hot plasma. Other observational signatures of reconnection, including plasma inflows and downflows, are unambiguously revealed and quantitatively measured. These observations provide direct evidence of magneti...

  3. Cluster beam targets for laser plasma extreme ultraviolet and soft x-ray sources

    DOE Patents [OSTI]

    Kublak, G.D.; Richardson, M.C.

    1996-11-19T23:59:59.000Z

    Method and apparatus for producing extreme ultraviolet (EUV) and soft x-ray radiation from an ultra-low debris plasma source are disclosed. Targets are produced by the free jet expansion of various gases through a temperature controlled nozzle to form molecular clusters. These target clusters are subsequently irradiated with commercially available lasers of moderate intensity (10{sup 11}--10{sup 12} watts/cm{sup 2}) to produce a plasma radiating in the region of 0.5 to 100 nanometers. By appropriate adjustment of the experimental conditions the laser focus can be moved 10--30 mm from the nozzle thereby eliminating debris produced by plasma erosion of the nozzle. 5 figs.

  4. The effects of concentrated ultraviolet light on high-efficiency silicon solar cells

    SciTech Connect (OSTI)

    Ruby, D.S.; Schubert, W.K.

    1991-01-01T23:59:59.000Z

    The importance of stability in the performance of solar cells is clearly recognized as fundamental. Some of the highest efficiency silicon solar cells demonstrated to date, such as the Point Contact solar cell and the Passivated Emitter solar cell, rely upon the passivation of cell surfaces in order to minimize recombination, which reduces cell power output. Recently, it has been shown that exposure to ultraviolet (UV) light of wavelengths present in the terrestrial solar spectrum can damage a passivating silicon-oxide interface and increase recombination. In this study, we compared the performance of Point Contact and Passivated Emitter solar cells after exposure to UV light. We also examined the effect of UV exposure on oxide-passivated silicon wafers. We found that current Passivated Emitter designs are stable at both one-sun and under concentrated sunlight. The evolution of Point Contact concentrator cell performance shows a clear trend towards more stable cells. 15 refs., 18 figs.

  5. Evaluation of Ultra-Violet Photocatalytic Oxidation for Indoor AirApplications

    SciTech Connect (OSTI)

    Hodgson, A.T.; Sullivan, D.P.; Fisk, W.J.

    2006-02-01T23:59:59.000Z

    Acceptable indoor air quality in office buildings may be achieved with less energy by combining effective air cleaning systems for volatile organic compounds (VOCs) with particle filtration then by relying solely on ventilation. For such applications, ultraviolet photocatalytic oxidation (UVPCO) systems are being developed for VOC destruction. An experimental evaluation of a UVPCO system is reported. The evaluation was unique in that it employed complex mixtures of VOCs commonly found in office buildings at realistically low concentrations. VOC conversion efficiencies varied over a broad range, usually exceeded 20%, and were as high as {approx}80%. Conversion efficiency generally diminished with increased air flow rate. Significant amounts of formaldehyde and acetaldehyde were produced due to incomplete mineralization. The results indicate that formaldehyde and acetaldehyde production rates may need to be reduced before such UVPCO systems can be deployed safely in occupied buildings.

  6. Electronic Excitations in B12As2 and their Temperature Dependence by Vacuum Ultraviolet Ellipsometry

    SciTech Connect (OSTI)

    S Bakalova; Y Gong; C Cobet; N Esser; Y Zhang; J Edgar; Y Zhang; M Dudley; M Kuball

    2011-12-31T23:59:59.000Z

    The dielectric response function of epitaxial B{sub 12}As{sub 2} films on 4H-SiC was determined at room temperature and at 10 K in the spectral region of 3.6-9.8 eV, i.e., in the vacuum ultraviolet (VUV) spectral region, by synchrotron ellipsometry. The experimental dielectric function was simulated with the critical point parabolic band model. The parameters of the dispersive structures were derived by numerical fitting of the experimental data to the proposed model. New high energy optical transitions are resolved at 5.95, 7.8 and 8.82 eV and their lineshape and origin are discussed. The temperature dependence of the critical point energies and transition strengths was determined, and the excitonic effect is considered.

  7. QUIET-SUN INTENSITY CONTRASTS IN THE NEAR-ULTRAVIOLET AS MEASURED FROM SUNRISE

    SciTech Connect (OSTI)

    Hirzberger, J.; Feller, A.; Riethmueller, T. L.; Schuessler, M.; Borrero, J. M.; Gandorfer, A.; Solanki, S. K.; Barthol, P. [Max-Planck-Institut fuer Sonnensystemforschung, D-37434 Katlenburg-Lindau (Germany); Afram, N.; Unruh, Y. C. [Astrophysics Group, Blackett Laboratory, Imperial College, London SW7 2AZ (United Kingdom); Berdyugina, S. V.; Berkefeld, T.; Schmidt, W. [Kiepenheuer-Institut fuer Sonnenphysik, D-79104 Freiburg (Germany); Bonet, J. A.; MartInez Pillet, V. [Instituto de Astrofisica de Canarias, E-38200 La Laguna (Spain); Knoelker, M. [High Altitude Observatory, National Center for Atmospheric Research, Boulder, CO 80307 (United States); Title, A. M., E-mail: hirzberger@mps.mpg.d [Lockheed Martin Solar and Astrophysics Laboratory, Palo Alto, CA 94305 (United States)

    2010-11-10T23:59:59.000Z

    We present high-resolution images of the Sun in the near-ultraviolet spectral range between 214 nm and 397 nm as obtained from the first science flight of the 1 m SUNRISE balloon-borne solar telescope. The quiet-Sun rms intensity contrasts found in this wavelength range are among the highest values ever obtained for quiet-Sun solar surface structures-up to 32.8% at a wavelength of 214 nm. We compare the rms contrasts obtained from the observational data with theoretical intensity contrasts obtained from numerical magnetohydrodynamic simulations. For 388 nm and 312 nm the observations agree well with the numerical simulations whereas at shorter wavelengths discrepancies between observed and simulated contrasts remain.

  8. Ultraviolet-B radiation enhancement in dielectric barrier discharge based xenon chloride exciplex source by air

    SciTech Connect (OSTI)

    Gulati, P., E-mail: pgulati1512@gmail.com [CSIR-Central Electronics Engineering Research Institute (CSIR-CEERI), Pilani, Rajasthan-333031 (India); Department of Physics, Banasthali University, P.O. Banasthali Vidyapith, Rajasthan 304022 (India); Prakash, R.; Pal, U. N.; Kumar, M. [CSIR-Central Electronics Engineering Research Institute (CSIR-CEERI), Pilani, Rajasthan-333031 (India); Vyas, V. [Department of Physics, Banasthali University, P.O. Banasthali Vidyapith, Rajasthan 304022 (India)

    2014-07-07T23:59:59.000Z

    A single barrier dielectric barrier discharge tube of quartz with multi-strip Titanium-Gold (Ti-Au) coatings have been developed and utilized for ultraviolet-B (UV-B) radiation production peaking at wavelength 308?nm. The observed radiation at this wavelength has been examined for the mixtures of the Xenon together with chlorine and air admixtures. The gas mixture composition, chlorine gas content, total gas pressure, and air pressure dependency of the UV intensity, has been analyzed. It is found that the larger concentration of Cl{sub 2} deteriorates the performance of the developed source and around 2% Cl{sub 2} in this source produced optimum results. Furthermore, an addition of air in the xenon and chlorine working gas environment leads to achieve same intensity of UV-B light but at lower working gas pressure where significant amount of gas is air.

  9. Influences of atmospheric conditions and air mass on the ratio of ultraviolet to total solar radiation

    SciTech Connect (OSTI)

    Riordan, C.J.; Hulstrom, R.L.; Myers, D.R.

    1990-08-01T23:59:59.000Z

    The technology to detoxify hazardous wastes using ultraviolet (UV) solar radiation is being investigated by the DOE/SERI Solar Thermal Technology Program. One of the elements of the technology evaluation is the assessment and characterization of UV solar radiation resources available for detoxification processes. This report describes the major atmospheric variables that determine the amount of UV solar radiation at the earth's surface, and how the ratio of UV-to-total solar radiation varies with atmospheric conditions. These ratios are calculated from broadband and spectral solar radiation measurements acquired at SERI, and obtained from the literature on modeled and measured UV solar radiation. The following sections discuss the atmospheric effects on UV solar radiation and provide UV-to-total solar radiation ratios from published studies, as well as measured values from SERI's data. A summary and conclusions are also given.

  10. Injection locking of a high power ultraviolet laser diode for laser cooling of ytterbium atoms

    E-Print Network [OSTI]

    Toshiyuki Hosoya; Martin Miranda; Ryotaro Inoue; Mikio Kozuma

    2014-12-02T23:59:59.000Z

    We developed a high-power laser system at a wavelength of 399 nm for laser cooling of ytterbium atoms with ultraviolet laser diodes. The system is composed of an external cavity laser diode providing frequency stabilized output at a power of 40 mW and another laser diode for amplifying the laser power up to 220 mW by injection locking. The systematic method for optimization of our injection locking can also be applied to high power light sources at any other wavelengths. Our system, which does not depend on complex nonlinear frequency-doubling, has great importance for implementing transportable optical lattice clocks, and is also useful for investigations on condensed matter physics or quantum information processing using cold atoms.

  11. Reliable self-powered highly spectrum-selective ZnO ultraviolet photodetectors

    SciTech Connect (OSTI)

    Shen, H. [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China) [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Shan, C. X., E-mail: shancx@ciomp.ac.cn, E-mail: binghuili@163.com; Li, B. H., E-mail: shancx@ciomp.ac.cn, E-mail: binghuili@163.com; Shen, D. Z. [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)] [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Xuan, B. [Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)] [Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

    2013-12-02T23:59:59.000Z

    Ultraviolet photodetectors (PDs) have been fabricated from p-ZnO:(Li,N)/n-ZnO structures in this Letter. The PDs can operate without any external power supply and show response only to a very narrow spectrum range. The self-power character of the devices is due to the built-in electric field in the p-n junctions that can separate the photogenerated electrons and holes while the high spectrum-selectivity has been attributed to the filter effect of the neutral region in the ZnO:(Li,N) layer. The performance of the self-powered highly spectrum-selective PDs degrades little after five months, indicating their good reliability.

  12. Ultraviolet stimulated electron source for use with low energy plasma instrument calibration

    E-Print Network [OSTI]

    Henderson, Kevin; Funsten, Herb; MacDonald, Elizabeth

    2011-01-01T23:59:59.000Z

    We report the development of a versatile, compact, low to medium energy electron source. A collimated, monoenergetic beam of electrons, up to 50 mm in diameter, is produced with energies ranging from 0.03 to 30 keV. A uniform electron beam profile is generated by illuminating a metal cathode plate with a near ultraviolet (UV) light emitting diode (LED). A parallel electric field accelerates the electrons away from the cathode plate towards a grounded grid. The beam intensity can be controlled from 10 - 10^9 electrons cm-2 s-1 and the angular divergence of the beam is less than 1 degree FWHM for energies greater than 1 keV.

  13. Tunable vacuum ultraviolet laser based spectrometer for angle resolved photoemission spectroscopy

    SciTech Connect (OSTI)

    Jiang, Rui; Mou, Daixiang; Wu, Yun; Huang, Lunan; Kaminski, Adam [Division of Materials Science and Engineering, Ames Laboratory, Ames, Iowa 50011 (United States) [Division of Materials Science and Engineering, Ames Laboratory, Ames, Iowa 50011 (United States); Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States); McMillen, Colin D.; Kolis, Joseph [Department of Chemistry, Clemson University, Clemson, South Carolina 29634 (United States)] [Department of Chemistry, Clemson University, Clemson, South Carolina 29634 (United States); Giesber, Henry G.; Egan, John J. [Advanced Photonic Crystals LLC, Fort Mill, South Carolina 29708 (United States)] [Advanced Photonic Crystals LLC, Fort Mill, South Carolina 29708 (United States)

    2014-03-15T23:59:59.000Z

    We have developed an angle-resolved photoemission spectrometer with tunable vacuum ultraviolet laser as a photon source. The photon source is based on the fourth harmonic generation of a near IR beam from a Ti:sapphire laser pumped by a CW green laser and tunable between 5.3 eV and 7 eV. The most important part of the set-up is a compact, vacuum enclosed fourth harmonic generator based on potassium beryllium fluoroborate crystals, grown hydrothermally in the US. This source can deliver a photon flux of over 10{sup 14} photon/s. We demonstrate that this energy range is sufficient to measure the k{sub z} dispersion in an iron arsenic high temperature superconductor, which was previously only possible at synchrotron facilities.

  14. Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys

    SciTech Connect (OSTI)

    Nepal, N.; Zavada, J. M. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Lee, D. S.; Steckl, A. J. [Nanoelectronics Laboratory, University of Cincinnati, Cincinnati, Ohio 45221 (United States); Sedhain, A.; Lin, J. Y.; Jiang, H. X. [Department of Electrical and Computer Engineering and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409 (United States)

    2009-03-16T23:59:59.000Z

    The ultraviolet (UV) photoluminescence (PL) properties of Tm-doped Al{sub x}Ga{sub 1-x}N (0.39{<=}x{<=}1) alloys grown by solid-source molecular beam epitaxy were probed using above-bandgap excitation from a laser source at 197 nm. The PL spectra show dominant UV emissions at 298 and 358 nm only for samples with x=1 and 0.81. Temperature dependence of the PL intensities of these emission lines reveals exciton binding energies of 150 and 57 meV, respectively. The quenching of these UV emissions appears related to the thermal activation of the excitons bound to rare-earth structured isovalent (RESI) charge traps, which transfer excitonic energy to Tm{sup 3+} ions resulting in the UV emissions. A model of the RESI trap levels in AlGaN alloys is presented.

  15. Spectral dependencies of killing, mutation, and transformation in mammalian cells and their relevance to hazards caused by solar ultraviolet radiation

    SciTech Connect (OSTI)

    Suzuki, F.; Han, A.; Lankas, G.R.; Utsumi, H.; Elkind, M.M.

    1981-12-01T23:59:59.000Z

    Using germicidal lamps and Westinghouse sunlamps with and without filtration, the effectiveness of ultraviolet and near-ultraviolet light in inducing molecular and cellular changes was measured. Cell survival and the induction of resistance to 6-thioguanine or to ouabain were measured with V79 Chinese hamster cells, cell survival and neoplastic transformation were measured with C3H mouse 10 T 1/2 cells, and the induction of pyrimidine dimers containing thymine was measured in both cell lines. The short-wavelength cutoff of the sunlamp emission was shifted from approximately 290 nm (unfiltered) to approximately 300 and approximately 310 nm by appropriate filters. Although it was found that the efficiency with which all end points were induced progressively decreased as the short-wavelength cutoff was shifted to longer wavelengths, the rates of decrease differed appreciably. For example, doses of near-ultraviolet light longer than approximately 300 nm that were effective in mutating or in transforming cells were ineffective in killing them. In respect to pyrimidine dimer induction, several but not all cellular end points were induced by dose ratios of sunlamp light (short-wavelength cutoff, approximately 290 nm) to germicidal lamp light (254 nm) in fairly close accord with the doses required to produce equivalent proportions of dimers. However, for near-ultraviolet light having cutoffs at longer wavelengths, the biological action observed was appreciably greater than what would be predicted from the proportion of dimers induced. From the latter observation, it is inferred that increasing intensities of short-wavelength ultraviolet light, as would be expected from reductions in stratospheric ozone around the earth, would result in smaller increases in biological action, e.g., skin cancer, compared to current levels of action than would be predicted from an action spectrum completely corresponding to that of a pyrimidine dimer induction spectrum in DNA.

  16. Far-ultraviolet observations of comet C/2001 Q4 (NEAT) with FIMS/SPEAR

    SciTech Connect (OSTI)

    Lim, Y.-M.; Min, K.-W. [Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Feldman, P. D. [Department of Physics and Astronomy, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218 (United States); Han, W. [Korea Astronomy and Space Science Institute (KASI), 776 Daedeokdae-ro, Yuseong-gu, Daejeon 305-348 (Korea, Republic of); Edelstein, J., E-mail: ymlim@kaist.ac.kr [Space Sciences Laboratory, University of California, Berkeley, 7 Gauss Way, Berkeley, CA 94720 (United States)

    2014-02-01T23:59:59.000Z

    We present the results of far-ultraviolet observations of comet C/2001 Q4 (NEAT) that were made with the Far-Ultraviolet Imaging Spectrograph on board the Korean satellite STSAT-1. The observations were conducted in two campaigns during its perihelion approach between 2004 May 8 and 15. Based on the scanning mode observations in the wavelength band of 1400-1700 Å, we have constructed an image of the comet with an angular size of 5°×5°, which corresponds to the central coma region. Several important fluorescence emission lines were detected including S I multiplets at 1429 and 1479 Å, C I multiplets at 1561 and 1657 Å, and the CO A{sup 1}?-X{sup 1}?{sup +} Fourth Positive system; we have estimated the production rates of the corresponding species from the fluxes of these emission lines. The estimated production rate of CO was Q {sub CO} = (2.65 ± 0.63) × 10{sup 28} s{sup –1}, which is 6.2%-7.4% of the water production rate and is consistent with earlier predictions. The average carbon production rate was estimated to be Q{sub C} = ?1.59 × 10{sup 28} s{sup –1}, which is ?60% of the CO production rate. However, the observed carbon profile was steeper than that predicted using the two-component Haser model in the inner coma region, while it was consistent with the model in the outer region. The average sulfur production rate was Q{sub S} = (4.03±1.03) × 10{sup 27} s{sup –1}, which corresponds to ?1% of the water production rate.

  17. STUDYING LARGE- AND SMALL-SCALE ENVIRONMENTS OF ULTRAVIOLET LUMINOUS GALAXIES

    SciTech Connect (OSTI)

    Basu-Zych, Antara R.; Schiminovich, David [Department of Astronomy, Columbia University, 550 West 120th Street, New York, NY 10027 (United States); Heinis, Sebastien; Heckman, Tim; Bianchi, Luciana [Center for Astrophysical Sciences, The Johns Hopkins' University, 3400 N. Charles St., Baltimore, MD 21218 (United States); Overzier, Roderik [Max-Planck-Institut fuer Astrophysik, D-85748 Garching (Germany); Zamojski, Michel; Barlow, Tom A.; Conrow, Tim; Forster, Karl G.; Friedman, Peter G.; Martin, D. Christopher; Morrissey, Patrick [California Institute of Technology, MC 405-47, 1200 East California Boulevard, Pasadena, CA 91125 (United States); Ilbert, Olivier [Institute for Astronomy, 2680 Woodlawn Dr., University of Hawaii, Honolulu, HI 96822 (United States); Koekemoer, Anton M. [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD 21218 (United States); Donas, Jose; Milliard, Bruno [Laboratoire d'Astrophysique de Marseille, BP8, Traverse du Siphon, F-13376 Marseille (France); Lee, Young-Wook [Center for Space Astrophysics, Yonsei University, Seoul 120-749 (Korea, Republic of); Madore, Barry F. [Observatories of the Carnegie Institution of Washington, 813 Santa Barbara St., Pasadena, CA 91101 (United States); Neff, Susan G. [Laboratory for Astronomy and Solar Physics, NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States)], E-mail: antara@astro.columbia.edu (and others)

    2009-07-10T23:59:59.000Z

    Studying the environments of 0.4 < z < 1.2 ultraviolet (UV)-selected galaxies, as examples of extreme star-forming galaxies (with star formation rates (SFRs) in the range of 3-30 M{sub sun} yr{sup -1}), we explore the relationship between high rates of star formation, host halo mass, and pair fractions. We study the large- and small-scale environments of local ultraviolet luminous galaxies (UVLGs) by measuring angular correlation functions. We cross-correlate these systems with other galaxy samples: a volume-limited sample (ALL), a blue luminous galaxy sample, and a luminous red galaxy (LRG) sample. We determine the UVLG comoving correlation length to be r{sub 0} = 4.8{sup +11.6}{sub -2.4} h {sup -1} Mpc at (z) = 1.0, which is unable to constrain the halo mass for this sample. However, we find that UVLGs form close (separation <30 kpc) pairs with the ALL sample, but do not frequently form pairs with LRGs. A rare subset of UVLGs, those with the highest FUV surface brightnesses, are believed to be local analogs of high-redshift Lyman break galaxies (LBGs) and are called Lyman break analogs (LBAs). LBGs and LBAs share similar characteristics (i.e., color, size, surface brightness, specific SFRs, metallicities, and dust content). Recent Hubble Space Telescope images of z {approx} 0.2 LBAs show disturbed morphologies, signs of mergers and interactions. UVLGs may be influenced by interactions with other galaxies and we discuss this result in terms of other high star-forming, merging systems.

  18. Masked-backlighter technique used to simultaneously image x-ray absorption and x-ray emission from an inertial confinement fusion plasma

    SciTech Connect (OSTI)

    Marshall, F. J., E-mail: fredm@lle.rochester.edu; Radha, P. B. [Laboratory for Laser Energetics, University of Rochester, Rochester, New York 14623 (United States)

    2014-11-15T23:59:59.000Z

    A method to simultaneously image both the absorption and the self-emission of an imploding inertial confinement fusion plasma has been demonstrated on the OMEGA Laser System. The technique involves the use of a high-Z backlighter, half of which is covered with a low-Z material, and a high-speed x-ray framing camera aligned to capture images backlit by this masked backlighter. Two strips of the four-strip framing camera record images backlit by the high-Z portion of the backlighter, while the other two strips record images aligned with the low-Z portion of the backlighter. The emission from the low-Z material is effectively eliminated by a high-Z filter positioned in front of the framing camera, limiting the detected backlighter emission to that of the principal emission line of the high-Z material. As a result, half of the images are of self-emission from the plasma and the other half are of self-emission plus the backlighter. The advantage of this technique is that the self-emission simultaneous with backlighter absorption is independently measured from a nearby direction. The absorption occurs only in the high-Z backlit frames and is either spatially separated from the emission or the self-emission is suppressed by filtering, or by using a backlighter much brighter than the self-emission, or by subtraction. The masked-backlighter technique has been used on the OMEGA Laser System to simultaneously measure the emission profiles and the absorption profiles of polar-driven implosions.

  19. Solvent Immersion Imprint Lithography. | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of polymer disolution was explored for polymer microsystem prototyping, including microfluidics and optofluidics. Polymer films are immersed in a solvent, imprinted and finally...

  20. Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode

    SciTech Connect (OSTI)

    Kang, Jang-Won; Choi, Yong-Seok; Goo Kang, Chang; Hun Lee, Byoung [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Kim, Byeong-Hyeok [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407 (United States); Park, Seong-Ju, E-mail: sjpark@gist.ac.kr [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

    2014-02-03T23:59:59.000Z

    We report on ultraviolet emission from a multi-layer graphene (MLG)/MgZnO/ZnO light-emitting diodes (LED). The p-type MLG and MgZnO in the MLG/MgZnO/ZnO LED are used as transparent hole injection and electron blocking layers, respectively. The current-voltage characteristics of the MLG/MgZnO/ZnO LED show that current transport is dominated by tunneling processes in the MgZnO barrier layer under forward bias conditions. The holes injected from p-type MLG recombine efficiently with the electrons accumulated in ZnO, and the MLG/MgZnO/ZnO LED shows strong ultraviolet emission from the band edge of ZnO and weak red-orange emission from the deep levels of ZnO.

  1. Could the Earth's surface Ultraviolet irradiance be blamed for the global warming? A new effect may exist

    E-Print Network [OSTI]

    Chen, Jilong; Zhao, Juan; Zheng, Yujun

    2014-01-01T23:59:59.000Z

    Whether natural factors could interpret the rise of the Earth's surface temperature is still controversial. Though numerous recent researches have reported apparent correlations between solar activity and the Earth's climate, solar activity has encountered a big problem when describing the rapid global warming after 1970s. Our investigation shows the good positive correlations between the Earth's surface Ultraviolet irradiance (280-400 nm) and the Earth's surface temperature both in temporal and spatial variations by analyzing the global surface Ultraviolet irradiance (280-400 nm) and global surface temperature data from 1980-1999. The rise of CO$_2$ cannot interpret the good positive correlations, and we could even get an opposite result to the good correlations when employing the rise of CO$_2$ to describe the relation between them. Based on the good positive correlations, we suggest a new effect, named "Highly Excited Water Vapor" (HEWV) effect, which can interpret how the Sun influences the Earth's surfac...

  2. A passive measurement of dissociated atom densities in atmospheric pressure air discharge plasmas using vacuum ultraviolet self-absorption spectroscopy

    SciTech Connect (OSTI)

    Laity, George [Center for Pulsed Power and Power Electronics, Department of Electrical and Computer Engineering and Department of Physics, Texas Tech University, Lubbock, Texas 79409 (United States); Applied Science and Technology Maturation Department, Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Fierro, Andrew; Dickens, James; Neuber, Andreas [Center for Pulsed Power and Power Electronics, Department of Electrical and Computer Engineering and Department of Physics, Texas Tech University, Lubbock, Texas 79409 (United States); Frank, Klaus [Erlangen Centre for Astroparticle Physics, Department of Physics, Friedrich–Alexander University at Erlangen-Nürnberg, 91058 Erlangen (Germany)

    2014-03-28T23:59:59.000Z

    We demonstrate a method for determining the dissociation degree of atmospheric pressure air discharges by measuring the self-absorption characteristics of vacuum ultraviolet radiation from O and N atoms in the plasma. The atom densities are determined by modeling the amount of radiation trapping present in the discharge, without the use of typical optical absorption diagnostic techniques which require external sources of probing radiation into the experiment. For an 8.0?mm spark discharge between needle electrodes at atmospheric pressure, typical peak O atom densities of 8.5?×?10{sup 17}?cm{sup ?3} and peak N atom densities of 9.9?×?10{sup 17}?cm{sup ?3} are observed within the first ?1.0?mm of plasma near the anode tip by analyzing the OI and NI transitions in the 130.0–132.0?nm band of the vacuum ultraviolet spectrum.

  3. The effective spectral irradiance of ultra-violet radiations from inert-gas-shielded welding processes in relation to the ARC current density

    E-Print Network [OSTI]

    DeVore, Robin Kent

    1973-01-01T23:59:59.000Z

    THE EFFECTIVE SPECTRAL IRRADIANCE OF ULTRAVIOLET RADIATIONS FROM INERT-GAS-SHIELDED MELDING PROCESSES IN RELATION TO THE ARC CURRENT DENSITY A Thesis by ROBIN KENT DEVORE Submitted to the Graduate College of Texas A&M University in partial... fulfillment of the requirement for the degree of MASTER OF SCIENCE December 1973 Major Subject: Industrial Hygiene THE EFFECTIVE SPECTRAL IRRADIANCE OF ULTRAVIOLET RADIATIONS FROM INERT-GAS-SHIELDED WELDING PROCESSES IN RELATION TO THE ARC CURRENT...

  4. The effective spectral irradiance of ultra-violet radiations from inert-gas-shielded welding processes in relation to the ARC current density 

    E-Print Network [OSTI]

    DeVore, Robin Kent

    1973-01-01T23:59:59.000Z

    fulfillment of the requirement for the degree of MASTER OF SCIENCE December 1973 Major Subject: Industrial Hygiene THE EFFECTIVE SPECTRAL IRRADIANCE OF ULTRAVIOLET RADIATIONS FROM INERT-GAS-SHIELDED WELDING PROCESSES IN RELATION TO THE ARC CURRENT... DENSITY A Thesis by ROBIN KENT DEVORE Approved as to style and content by: C alarm n of o itte Hea o partment e er Member December 1973 ABSTRACT The Effective Spectral Irradiance of Ultraviolet Radiations from Inert-Gas-Shielded Welding...

  5. Hot-electron-driven charge transfer processes on O2 Pt,,111... surface probed by ultrafast extreme-ultraviolet pulses

    E-Print Network [OSTI]

    Bauer, Michael

    it with an ultrafast laser pulse, charge transfer induced changes in the platinum-oxygen bond were observedHot-electron-driven charge transfer processes on O2 Ã?Pt,,111... surface probed by ultrafast extreme-ultraviolet pulses C. Lei,1, * M. Bauer,2 K. Read,1 R. Tobey,1 Y. Liu,3 T. Popmintchev,1 M. M. Murnane,1 and H. C

  6. The effects of cerium doping on the size, morphology, and optical properties of ?-hematite nanoparticles for ultraviolet filtration

    SciTech Connect (OSTI)

    Cardillo, Dean [Institute for Superconducting and Electronic Materials, AIIM Facility, University of Wollongong Innovation Campus, Squires Way, North Wollongong, NSW 2500 (Australia); Konstantinov, Konstantin, E-mail: konstan@uow.edu.au [Institute for Superconducting and Electronic Materials, AIIM Facility, University of Wollongong Innovation Campus, Squires Way, North Wollongong, NSW 2500 (Australia); Devers, Thierry [Centre de Recherche sur la Matière Divisée, Institut de Physique, site de Chartres, Université d’Orléans (France)

    2013-11-15T23:59:59.000Z

    Highlights: • Possible application of cerium-doped ?-hematite as ultraviolet filter. • Nanoparticles obtained through co-precipitation technique using various cerium doping levels followed by annealing. • Comprehensive materials characterisation utilizing XRD, DSC/TGA, STEM, UV–vis spectroscopy. • Increasing cerium content reduces particle sizing and alters morphology. • Solubility of cerium in hematite seen between 5 and 10% doping, 10% cerium doping greatly enhances attenuation in ultraviolet region and increases optical bandgap. - Abstract: Metal oxide nanoparticles have potential use in energy storage, electrode materials, as catalysts and in the emerging field of nanomedicine. Being able to accurately tailor the desirable properties of these nanoceramic materials, such as particle size, morphology and optical bandgap (E{sub g}) is integral in the feasibility of their use. In this study we investigate the altering of both the structure and physical properties through the doping of hematite (?-Fe{sub 2}O{sub 3}) nanocrystals with cerium at a range of concentrations, synthesised using a one-pot co-precipitation method. This extremely simple synthesis followed by thermal treatment results in stable Fe{sub 2?x}Ce{sub x}O{sub y} nanoceramics resulting from the burning of any unreacted precursors and transformation of goethite-cerium doped nanoparticle intermediate. The inclusion of Ce into the crystal lattice of these ?-Fe{sub 2}O{sub 3} nanoparticles causes a significantly large reduction in mean crystalline size and alteration in particle morphology with increasing cerium content. Finally we report an increase optical semiconductor bandgap, along with a substantial increase in the ultraviolet attenuation found for a 10% Ce-doping concentration which shows the potential application of cerium-doped hematite nanocrystals to be used as a pigmented ultraviolet filter for cosmetic products.

  7. Multiple pulse thermal damage thresholds of materials for x-ray free electron laser optics investigated with an ultraviolet laser

    SciTech Connect (OSTI)

    Hau-Riege, Stefan P.; London, Richard A.; Bionta, Richard M.; Soufli, Regina; Ryutov, Dmitri; Shirk, Michael; Baker, Sherry L. [Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, California 94539 (United States); Smith, Patrick M.; Nataraj, Pradeep [Kovio, Inc., 1145 Sonora Court, Sunnyvale, California 94086 (United States)

    2008-11-17T23:59:59.000Z

    Optical elements to be used for x-ray free electron lasers (XFELs) must withstand multiple high-fluence pulses. We have used an ultraviolet laser to study the damage of two candidate materials, crystalline Si and B{sub 4}C-coated Si, emulating the temperature profile expected to occur in optics exposed to XFEL pulses. We found that the damage threshold for 10{sup 5} pulses is {approx}20% to 70% lower than the melting threshold.

  8. Exploring the Origin and Fate of the Magellanic Stream with Ultraviolet and Optical Absorption

    E-Print Network [OSTI]

    Fox, Andrew J; Smoker, Jonathan V; Richter, Philipp; Savage, Blair D; Sembach, Kenneth R

    2010-01-01T23:59:59.000Z

    (Abridged) We present an analysis of ionization and metal enrichment in the Magellanic Stream (MS), the nearest gaseous tidal stream, using HST/STIS and FUSE ultraviolet spectroscopy of two background AGN, NGC 7469 and Mrk 335. For NGC 7469, we include optical spectroscopy from VLT/UVES. In both sightlines the MS is detected in low-ion and high-ion absorption. Toward NGC 7469, we measure a MS oxygen abundance [O/H]_MS=[OI/HI]=-1.00+/-0.05(stat)+/-0.08(syst), supporting the view that the Stream originates in the SMC rather than the LMC. We use CLOUDY to model the low-ion phase of the Stream as a photoionized plasma using the observed Si III/Si II and C III/C II ratios. Toward Mrk 335 this yields an ionization parameter log U between -3.45 and -3.15 and a gas density log (n_H/cm^-3) between -2.51 and -2.21. Toward NGC 7469 we derive sub-solar abundance ratios for [Si/O], [Fe/O], and [Al/O], indicating the presence of dust in the MS. The high-ion column densities are too large to be explained by photoionization,...

  9. Vacuum-ultraviolet (VUV) photoionization of small methanol and methanol-water clusters

    SciTech Connect (OSTI)

    Ahmed, Musahid; Ahmed, Musahid; Wilson, Kevin R.; Belau, Leonid; Kostko, Oleg

    2008-05-12T23:59:59.000Z

    In this work we report on thevacuum-ultraviolet (VUV) photoionization of small methanol and methanol-water clusters. Clusters of methanol with water are generated via co-expansion of the gas phase constituents in a continuous supersonic jet expansion of methanol and water seeded in Ar. The resulting clusters are investigated by single photon ionization with tunable vacuumultraviolet synchrotron radiation and mass analyzed using reflectron mass spectrometry. Protonated methanol clusters of the form (CH3OH)nH + (n=1-12) dominate the mass spectrum below the ionization energy of the methanol monomer. With an increase in water concentration, small amounts of mixed clusters of the form (CH3OH)n(H2O)H + (n=2-11) are detected. The only unprotonated species observed in this work are the methanol monomer and dimer. Appearance energies are obtained from the photoionization efficiency (PIE) curves for CH3OH +, (CH 3OH)2 +, (CH3OH)nH + (n=1-9), and (CH 3OH)n(H2O)H + (n=2-9 ) as a function of photon energy. With an increase in the water content in the molecular beam, there is an enhancement of photoionization intensity for methanol dimer and protonated methanol monomer at threshold. These results are compared and contrasted to previous experimental observations.

  10. CITIUS: An infrared-extreme ultraviolet light source for fundamental and applied ultrafast science

    SciTech Connect (OSTI)

    Grazioli, C.; Gauthier, D.; Ivanov, R.; De Ninno, G. [Laboratory of Quantum Optics, University of Nova Gorica, Nova Gorica (Slovenia) [Laboratory of Quantum Optics, University of Nova Gorica, Nova Gorica (Slovenia); Elettra Sincrotrone Trieste, Trieste (Italy)] [Italy; Callegari, C.; Spezzani, C. [Elettra Sincrotrone Trieste, Trieste (Italy)] [Elettra Sincrotrone Trieste, Trieste (Italy); Ciavardini, A. [Sapienza University, Rome (Italy)] [Sapienza University, Rome (Italy); Coreno, M. [Elettra Sincrotrone Trieste, Trieste (Italy) [Elettra Sincrotrone Trieste, Trieste (Italy); Institute of Inorganic Methodologies and Plasmas (CNR-IMIP), Montelibretti, Roma (Italy); Frassetto, F.; Miotti, P.; Poletto, L. [Institute of Photonics and Nanotechnologies (CNR-IFN), Padova (Italy)] [Institute of Photonics and Nanotechnologies (CNR-IFN), Padova (Italy); Golob, D. [Kontrolni Sistemi d.o.o., Sežana (Slovenia)] [Kontrolni Sistemi d.o.o., Sežana (Slovenia); Kivimäki, A. [Institute of Materials Manufacturing (CNR-IOM), TASC Laboratory, Trieste (Italy)] [Institute of Materials Manufacturing (CNR-IOM), TASC Laboratory, Trieste (Italy); Mahieu, B. [Elettra Sincrotrone Trieste, Trieste (Italy) [Elettra Sincrotrone Trieste, Trieste (Italy); Service des Photons Atomes et Molécules, Commissariat à l'Energie Atomique, Centre d'Etudes de Saclay, Bâtiment 522, 91191 Gif-sur-Yvette (France); Bu?ar, B.; Merhar, M. [Laboratory of Mechanical Processing Technologies, University of Ljubljana, Ljubljana (Slovenia)] [Laboratory of Mechanical Processing Technologies, University of Ljubljana, Ljubljana (Slovenia); Polo, E. [Institute of Organic Synthesis and Photoreactivity (CNR-ISOF), Ferrara (Italy)] [Institute of Organic Synthesis and Photoreactivity (CNR-ISOF), Ferrara (Italy); Ressel, B. [Laboratory of Quantum Optics, University of Nova Gorica, Nova Gorica (Slovenia)] [Laboratory of Quantum Optics, University of Nova Gorica, Nova Gorica (Slovenia)

    2014-02-15T23:59:59.000Z

    We present the main features of CITIUS, a new light source for ultrafast science, generating tunable, intense, femtosecond pulses in the spectral range from infrared to extreme ultraviolet (XUV). The XUV pulses (about 10{sup 5}-10{sup 8} photons/pulse in the range 14-80 eV) are produced by laser-induced high-order harmonic generation in gas. This radiation is monochromatized by a time-preserving monochromator, also allowing one to work with high-resolution bandwidth selection. The tunable IR-UV pulses (10{sup 12}-10{sup 15} photons/pulse in the range 0.4-5.6 eV) are generated by an optical parametric amplifier, which is driven by a fraction of the same laser pulse that generates high order harmonics. The IR-UV and XUV pulses follow different optical paths and are eventually recombined on the sample for pump-probe experiments. We also present the results of two pump-probe experiments: with the first one, we fully characterized the temporal duration of harmonic pulses in the time-preserving configuration; with the second one, we demonstrated the possibility of using CITIUS for selective investigation of the ultra-fast dynamics of different elements in a magnetic compound.

  11. Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED)

    SciTech Connect (OSTI)

    Kurose, N., E-mail: kurose@fc.ritsumei.ac.jp; Aoyagi, Y. [The Research Organization of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577 (Japan)] [The Research Organization of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577 (Japan); Shibano, K.; Araki, T. [Department of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577 (Japan)] [Department of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577 (Japan)

    2014-02-15T23:59:59.000Z

    A vertical ultraviolet (UV) light-emitting diode (LED) that does not require substrate removal is developed. Spontaneous via holes are formed in n-AlN layer epitaxially grown on a high conductive n+Si substrate and the injected current flows directly from the p-electrode to high doped n{sup +} Si substrate through p-AlGaN, multi-quantum wells, n-AlGaN and spontaneous via holes in n-AlN. The spontaneous via holes were formed by controlling feeding-sequence of metal-organic gas sources and NH{sub 3} and growth temperature in MOCVD. The via holes make insulating n-AlN to be conductive. We measured the current-voltage, current-light intensity and emission characteristics of this device. It exhibited a built-in voltage of 3.8 V and emission was stated at 350 nm from quantum wells with successive emission centered at 400?nm. This UV LED can be produced, including formation of n and p electrodes, without any resist process.

  12. Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

    SciTech Connect (OSTI)

    Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)] [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

    2013-01-28T23:59:59.000Z

    We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.

  13. Finding gas-rich dwarf galaxies betrayed by their ultraviolet emission

    E-Print Network [OSTI]

    Meyer, Jennifer Donovan; Putman, Mary; Grcevich, Jana

    2015-01-01T23:59:59.000Z

    We present ultraviolet (UV) follow-up of a sample of potential dwarf galaxy candidates selected for their neutral hydrogen (HI) properties, taking advantage of the low UV background seen by the GALEX satellite and its large and publicly available imaging footprint. The HI clouds, which are drawn from published GALFA-HI and ALFALFA HI survey compact cloud catalogs, are selected to be galaxy candidates based on their spatial compactness and non-association with known high-velocity cloud complexes or Galactic HI emission. Based on a comparison of their UV characteristics to those of known dwarf galaxies, half (48%) of the compact HI clouds have at least one potential stellar counterpart with UV properties similar to those of nearby dwarf galaxies. If galaxies, the star formation rates, HI masses, and star formation efficiencies of these systems follow the trends seen for much larger galaxies. The presence of UV emission is an efficient method to identify the best targets for spectroscopic follow-up, which is nec...

  14. Stability properties of Hawking radiation in the presence of ultraviolet violation of local Lorentz invariance

    E-Print Network [OSTI]

    Antonin Coutant

    2014-05-14T23:59:59.000Z

    In this thesis, we study several features of Hawking radiation in the presence of ultraviolet Lorentz violations. These violations are implemented by a modified dispersion relation that becomes nonlinear at short wavelengths. The motivations of this work arise on the one hand from the developing field of analog gravity, where we aim at measuring the Hawking effect in fluid flows that mimic black hole space-times, and on the other hand from the possibility that quantum gravity effects might be approximately modeled by a modified dispersion relation. We develop several studies on various aspects of the problem. First we obtain precise characterizations about the deviations from the Hawking result of black hole radiation, which are induced by dispersion. Second, we study the emergence, both in white hole flows or for massive fields, of a macroscopic standing wave, spontaneously produced from the Hawking effect, and known as `undulation'. Third, we describe in detail an instability named black hole laser, which arises in the presence of two horizons, where Hawking radiation is self-amplified and induces an exponentially growing in time emitted flux.

  15. Norathyriol Suppresses Skin Cancers Induced by Solar Ultraviolet Radiation by Targeting ERK Kinases

    SciTech Connect (OSTI)

    Li, Jixia; Malakhova, Margarita; Mottamal, Madhusoodanan; Reddy, Kanamata; Kurinov, Igor; Carper, Andria; Langfald, Alyssa; Oi, Naomi; Kim, Myoung Ok; Zhu, Feng; Sosa, Carlos P.; Zhou, Keyuan; Bode, Ann M.; Dong, Zigang (Cornell); (Guangdong); (UMM)

    2012-06-27T23:59:59.000Z

    Ultraviolet (UV) irradiation is the leading factor in the development of skin cancer, prompting great interest in chemopreventive agents for this disease. In this study, we report the discovery of norathyriol, a plant-derived chemopreventive compound identified through an in silico virtual screening of the Chinese Medicine Library. Norathyriol is a metabolite of mangiferin found in mango, Hypericum elegans, and Tripterospermum lanceolatum and is known to have anticancer activity. Mechanistic investigations determined that norathyriol acted as an inhibitor of extracellular signal-regulated kinase (ERK)1/2 activity to attenuate UVB-induced phosphorylation in mitogen-activated protein kinases signaling cascades. We confirmed the direct and specific binding of norathyriol with ERK2 through a cocrystal structural analysis. The xanthone moiety in norathyriol acted as an adenine mimetic to anchor the compound by hydrogen bonds to the hinge region of the protein ATP-binding site on ERK2. Norathyriol inhibited in vitro cell growth in mouse skin epidermal JB6 P+ cells at the level of G{sub 2}-M phase arrest. In mouse skin tumorigenesis assays, norathyriol significantly suppressed solar UV-induced skin carcinogenesis. Further analysis indicated that norathyriol mediates its chemopreventive activity by inhibiting the ERK-dependent activity of transcriptional factors AP-1 and NF-{kappa}B during UV-induced skin carcinogenesis. Taken together, our results identify norathyriol as a safe new chemopreventive agent that is highly effective against development of UV-induced skin cancer.

  16. Demonstration and evaluation of the pulsed ultraviolet-irradiation gas-treatment system, Savannah River Site

    SciTech Connect (OSTI)

    Schneider, J.; Wilkey, M.; Peters, R.; Tomczyk, N.; Friedlund, J.; Farber, P. [Argonne National Lab., IL (United States). Energy Systems Div.; Mass, B.; Haag, W. [Purus, Inc., San Jose, CA (United States)

    1994-10-01T23:59:59.000Z

    Argonne National Laboratory was asked to demonstrate and evaluate a pulsed ultraviolet-irradiation system developed by Purus, Inc., at the Volatile Organic Compounds Non-Arid Integrated Demonstration at the Savannah River Site near aiken, South Carolina. The Purus system consists of four reactor chambers, each containing a xenon flash lamp. During the two weeks of testing, samples were taken and analyzed from the inlet and outlet sides of the Purus system. The contaminants of concern on the inlet were tetrachloroethylene (PCE), trichloroethylene (TCE), and 1,1,1-trichloroethane (TCA); the contaminants of concern on the outlet were PCE, TCE, TCA, carbon tetrachloride (CT), and chloroform. The evaluation of the Purus system included an examination of the reduction of both TCE and PCE and a search for any change in the concentrations. (Operating conditions included flow rates, ranging from 25 to 100 standard cubic feet per minute; inlet concentration of PCE, ranging from 360 to 10,700 parts per million volume; and flash lamp rates, ranging from 1 to 30 hertz.) The Purus system was quite efficient at reducing the concentrations of both PCE and TCE. The potential by-products, TCA, CT, and chloroform, showed no significant increases throughout the range of the various operating parameters. Overall, the Purus system appears to be a cost-efficient means of reducing the concentrations of PCE and TCE, while the removal of the initial photo-oxidation products and TCA is slower and needs further evaluation.

  17. Nanostructured High Performance Ultraviolet and Blue Light Emitting Diodes for Solid State Lighting

    SciTech Connect (OSTI)

    Arto V. Nurmikko; Jung Han

    2005-09-30T23:59:59.000Z

    We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications. Accomplishments in the second 12 month contract period include (i) new means of synthesizing AlGaN and InN quantum dots by droplet heteroepitaxy, (ii) synthesis of AlGaInN nanowires as building blocks for GaN-based microcavity devices, (iii) progress towards direct epitaxial alignment of the dense arrays of nanowires, (iv) observation and measurements of stimulated emission in dense InGaN nanopost arrays, (v) design and fabrication of InGaN photonic crystal emitters, and (vi) observation and measurements of enhanced fluorescence from coupled quantum dot and plasmonic nanostructures. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

  18. NANOSTRUCTURED HIGH PERFORMANCE ULTRAVIOLET AND BLUE LIGHT EMITTING DIODES FOR SOLID STATE LIGHTING

    SciTech Connect (OSTI)

    Arto V. Nurmikko; Jung Han

    2004-10-01T23:59:59.000Z

    We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications. Accomplishments in the first 12 month contract period include (1) new means of synthesizing zero- and one-dimensional GaN nanostructures, (2) establishment of the building blocks for making GaN-based microcavity devices, and (3) demonstration of top-down approach to nano-scale photonic devices for enhanced spontaneous emission and light extraction. These include a demonstration of eight-fold enhancement of the external emission efficiency in new InGaN QW photonic crystal structures. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

  19. System for time-discretized vacuum ultraviolet spectroscopy of spark breakdown in air

    SciTech Connect (OSTI)

    Ryberg, D.; Fierro, A.; Dickens, J.; Neuber, A. [Center for Pulsed Power and Power Electronics, Department of Electrical and Computer Engineering and Department of Physics, Texas Tech University, Lubbock, Texas 79409 (United States)

    2014-10-15T23:59:59.000Z

    A system for time-discretized spectroscopic measurements of the vacuum ultraviolet (VUV) emission from spark discharges in the 60-160 nm range has been developed for the study of early plasma-forming phenomena. The system induces a spark discharge in an environment close to atmospheric conditions created using a high speed puff value, but is otherwise kept at high vacuum to allow for the propagation of VUV light. Using a vertical slit placed 1.5 mm from the discharge the emission from a small cross section of the discharge is allowed to pass into the selection chamber consisting of a spherical grating, with 1200 grooves/mm, and an exit slit set to 100 ?m. Following the exit slit is a photomultiplier tube with a sodium salicylate scintillator that is used for the time discretized measurement of the VUV signal with a temporal resolution limit of 10 ns. Results from discharges studied in dry air, Nitrogen, SF{sub 6}, and Argon indicate the emission of light with wavelengths shorter than 120 nm where the photon energy begins to approach the regime of direct photoionization.

  20. Comparison of surface vacuum ultraviolet emissions with resonance level number densities. I. Argon plasmas

    SciTech Connect (OSTI)

    Boffard, John B., E-mail: jboffard@wisc.edu; Lin, Chun C. [Department of Physics, University of Wisconsin, Madison, WI 53706 (United States); Culver, Cody [Materials Science Program, University of Wisconsin, Madison, WI 53706 (United States); Wang, Shicong; Wendt, Amy E. [Department of Electrical and Computer Engineering, University of Wisconsin, Madison, WI 53706 (United States); Radovanov, Svetlana; Persing, Harold [Varian Semiconductor Equipment, Applied Materials Inc., Gloucester, MA 01939 (United States)

    2014-03-15T23:59:59.000Z

    Vacuum ultraviolet (VUV) photons emitted from excited atomic states are ubiquitous in material processing plasmas. The highly energetic photons can induce surface damage by driving surface reactions, disordering surface regions, and affecting bonds in the bulk material. In argon plasmas, the VUV emissions are due to the decay of the 1s{sub 4} and 1s{sub 2} principal resonance levels with emission wavelengths of 104.8 and 106.7?nm, respectively. The authors have measured the number densities of atoms in the two resonance levels using both white light optical absorption spectroscopy and radiation-trapping induced changes in the 3p{sup 5}4p?3p{sup 5}4s branching fractions measured via visible/near-infrared optical emission spectroscopy in an argon inductively coupled plasma as a function of both pressure and power. An emission model that takes into account radiation trapping was used to calculate the VUV emission rate. The model results were compared to experimental measurements made with a National Institute of Standards and Technology-calibrated VUV photodiode. The photodiode and model results are in generally good accord and reveal a strong dependence on the neutral gas temperature.

  1. Response of five tropical plant species to natural solar ultraviolet-B radiation

    SciTech Connect (OSTI)

    Searles, P.S.; Caldwell, M.M. (Utah State Univ., Logan, UT (United States)); Winter, K. (Smithsonian Tropical Research Institute, Balboa (Panama))

    1994-06-01T23:59:59.000Z

    The tropical latitudes currently receive high solar ultraviolet-B radiation (UV-B, 280-320 nm) even without ozone depletion. Thus, the influence of natural, present-day UV-B irradiance was examined for three native rainforest tree species and two economically important species on Barro Colorado Island, Panama (9[degrees] N). Solar UV-B radiation conditions were obtained using a UV-B excluding plastic film or a near-ambient UV-B transmitting film over potted plants in a small clearing. Significant differences were often exhibited as increased foliar UV-B absorbing compounds, increased leaf mass pre area, and reduced leaf blade length for plants receiving solar UV-B radiation. Plant height was typically reduced under solar UV-B, but some variation among species in response was seen. Biomass and photosystem II function were generally unaffected. The results provide evidence that tropical vegetation responds to the present level of Solar UV-B radiation. This suggests even a small increase in UV-B radiation with ozone depletion may have biological implications.

  2. Ultraviolet Morphologies and Star-Formation Rates of CLASH Brightest Cluster Galaxies

    E-Print Network [OSTI]

    Donahue, Megan; Fogarty, Kevin; Li, Yuan; Voit, G Mark; Postman, Marc; Koekemoer, Anton; Moustakas, John; Bradley, Larry; Ford, Holland

    2015-01-01T23:59:59.000Z

    Brightest cluster galaxies (BCGs) are usually quiescent, but many exhibit star formation. Here we exploit the opportunity provided by rest-frame UV imaging of galaxy clusters in the CLASH (Cluster Lensing and Supernovae with Hubble) Multi-Cycle Treasury Project to reveal the diversity of UV morphologies in BCGs and to compare them with recent simulations of the cool, star-forming gas structures produced by precipitation-driven feedback. All of the CLASH BCGs are detected in the rest-frame UV (280 nm), regardless of their star-formation activity, because evolved stellar populations produce a modest amount of UV light that traces the relatively smooth, symmetric, and centrally peaked stellar distribution seen in the near infrared. Ultraviolet morphologies among the BCGs with strong UV excesses exhibit distinctive knots, multiple elongated clumps, and extended filaments of emission that distinctly differ from the smooth profiles of the UV-quiet BCGs. These structures, which are similar to those seen in the few s...

  3. METALLICITY DIFFERENCES IN TYPE Ia SUPERNOVA PROGENITORS INFERRED FROM ULTRAVIOLET SPECTRA

    SciTech Connect (OSTI)

    Foley, Ryan J.; Kirshner, Robert P. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States)

    2013-05-20T23:59:59.000Z

    Two ''twin'' Type Ia supernovae (SNe Ia), SNe 2011by and 2011fe, have extremely similar optical light-curve shapes, colors, and spectra, yet have different ultraviolet (UV) continua as measured in Hubble Space Telescope spectra and measurably different peak luminosities. We attribute the difference in the UV continua to significantly different progenitor metallicities. This is the first robust detection of different metallicities for SN Ia progenitors. Theoretical reasoning suggests that differences in metallicity also lead to differences in luminosity. SNe Ia with higher progenitor metallicities have lower {sup 56}Ni yields and lower luminosities for the same light-curve shape. SNe 2011by and 2011fe have different peak luminosities ({Delta}M{sub V} Almost-Equal-To 0.6 mag), which correspond to different {sup 56}Ni yields: M{sub 11fe}({sup 56}Ni) / M{sub 11by}({sup 56}Ni) = 1.7{sup +0.7}{sub -0.5}. From theoretical models that account for different neutron-to-proton ratios in progenitors, the differences in {sup 56}Ni yields for SNe 2011by and 2011fe imply that their progenitor stars were above and below solar metallicity, respectively. Although we can distinguish progenitor metallicities in a qualitative way from UV data, the quantitative interpretation in terms of abundances is limited by the present state of theoretical models.

  4. Resonantly enhanced method for generation of tunable, coherent vacuum ultraviolet radiation

    DOE Patents [OSTI]

    Glownia, James H. (Los Alamos, NM); Sander, Robert K. (Los Alamos, NM)

    1985-01-01T23:59:59.000Z

    Carbon Monoxide vapor is used to generate coherent, tunable vacuum ultraviolet radiation by third-harmonic generation using a single tunable dye laser. The presence of a nearby electronic level resonantly enhances the nonlinear susceptibility of this molecule allowing efficient generation of the vuv light at modest pump laser intensities, thereby reducing the importance of a six-photon multiple-photon ionization process which is also resonantly enhanced by the same electronic level but to higher order. By choosing the pump radiation wavelength to be of shorter wavelength than individual vibronic levels used to extend tunability stepwise from 154.4 to 124.6 nm, and the intensity to be low enough, multiple-photon ionization can be eliminated. Excitation spectra of the third-harmonic emission output exhibit shifts to shorter wavelength and broadening with increasing CO pressure due to phase matching effects. Increasing the carbon monoxide pressure, therefore, allows the substantial filling in of gaps arising from the stepwise tuning thereby providing almost continuous tunability over the quoted range of wavelength emitted.

  5. Resonantly enhanced method for generation of tunable, coherent vacuum-ultraviolet radiation

    DOE Patents [OSTI]

    Glownia, J.H.; Sander, R.K.

    1982-06-29T23:59:59.000Z

    Carbon Monoxide vapor is used to generate coherent, tunable vacuum ultraviolet radiation by third-harmonic generation using a single tunable dye laser. The presence of a nearby electronic level resonantly enhances the nonlinear susceptibility of this molecule allowing efficient generation of the vuv light at modest pump laser intensities, thereby reducing the importance of a six-photon multiple-photon ionization process which is also resonantly enhanced by the same electronic level but no higher order. By choosing the pump radiation wavelength to be of shorter wavelength than individual vibronic levels used to extend tunability stepwise from 154.4 to 124.6 nm, and the intensity to be low enough, multiple-photon ionization can be eliminated. Excitation spectra of the third-harmonic emission output exhibit shifts to shorter wavelength and broadening with increasing CO pressure due to phase matching effects. Increasing the carbon monoxide pressure, therefore, allows the substantial filling in of gaps arising from the stepwise tuning thereby providing almost continuous tunability over the quoted range of wavelength emitted.

  6. TEMPERATURE AND EXTREME-ULTRAVIOLET INTENSITY IN A CORONAL PROMINENCE CAVITY AND STREAMER

    SciTech Connect (OSTI)

    Kucera, T. A. [NASA/GSFC, Code 671, Greenbelt, MD 20771 (United States); Gibson, S. E.; Schmit, D. J. [HAO/NCAR, P.O. Box 3000, Boulder, CO 80307-3000 (United States); Landi, E. [Department of Atmospheric, Oceanic and Space Science, Space Research Building, University of Michigan, 2455 Hayward St., Ann Arbor, MI 48109-2143 (United States); Tripathi, D. [Inter-University Centre for Astronomy and Astrophysics, Post Bag-4, Ganeshkhind, Pune University Campus, Pune 411 007 (India)

    2012-09-20T23:59:59.000Z

    We analyze the temperature and EUV line emission of a coronal cavity and surrounding streamer in terms of a morphological forward model. We use a series of iron line ratios observed with the Hinode Extreme-ultraviolet Imaging Spectrograph (EIS) on 2007 August 9 to constrain temperature as a function of altitude in a morphological forward model of the streamer and cavity. We also compare model predictions to the EIS EUV line intensities and polarized brightness (pB) data from the Mauna Loa Solar Observatory (MLSO) Mark 4 K-coronameter. This work builds on earlier analysis using the same model to determine geometry of and density in the same cavity and streamer. The fit to the data with altitude-dependent temperature profiles indicates that both the streamer and cavity have temperatures in the range 1.4-1.7 MK. However, the cavity exhibits substantial substructure such that the altitude-dependent temperature profile is not sufficient to completely model conditions in the cavity. Coronal prominence cavities are structured by magnetism so clues to this structure are to be found in their plasma properties. These temperature substructures are likely related to structures in the cavity magnetic field. Furthermore, we find that the model overestimates the EUV line intensities by a factor of 4-10, without overestimating pB. We discuss this difference in terms of filling factors and uncertainties in density diagnostics and elemental abundances.

  7. A Survey of Intrinsic Absorption in Active Galaxies using the Far Ultraviolet Spectroscopic Explorer

    E-Print Network [OSTI]

    Jay P. Dunn; D. Michael Crenshaw; S. B. Kraemer; J. R. Gabel

    2007-06-20T23:59:59.000Z

    We present a survey of 72 Seyfert galaxies and quasars observed by the it Far Ultraviolet Spectroscopic Explorer (FUSE). We have determined that 72 of 253 available active galactic nuclei (AGN) targets are viable targets for detection of intrinsic absorption lines. We examined these spectra for signs of intrinsic absorption in the O VI doublet (lambda 1031.9, 1037.6) and Lyman beta (lambda 1025.7). The fraction of Seyfert 1 galaxies and low-redshift quasars at z absorption is ~50%, which is slightly lower than Crenshaw et al. (1999) found (60%) based on a smaller sample of Seyfert 1 galaxies observed with the Hubble Space Telescope (HST). With this new fraction we find a global covering factor of the absorbing gas with respect to the central nucleus of ~0.4. Our survey is to date the largest searching for intrinsic UV absorption with high spectral resolution, and is the first step toward a more comprehensive study of intrinsic absorption in low-redshift AGN.

  8. Intrinsic Absorption Properties in Active Galaxies Observed with the Far Ultraviolet Spectroscopic Explorer

    E-Print Network [OSTI]

    Jay P. Dunn; D. Michael Crenshaw; S. B. Kraemer; M. L. Trippe

    2008-07-01T23:59:59.000Z

    In a continuing survey of active galactic nuclei observed by the Far Ultraviolet Spectroscopic Explorer, we provide a deeper analysis of intrinsic absorption features found in 35 objects. Our survey is for low-redshift and moderate-luminosity objects, mostly Seyfert galaxies. We find a strong correlation between maximum radial velocity and luminosity. We also examine the relationships between equivalent width (EW), full width at half maximum, velocity: and continuum flux. The correlation between velocity and luminosity has been explored previously by Laor & Brandt, but at a significantly higher redshift and heavily weighted by broad absorption line quasars. We also have examined each object with multiple observations for variability in each of the aforementioned quantities, and have characterized the variation of EW with the continuum flux. In our survey, we find that variability of O VI lambda1032, lambda1038 is less common than of the UV doublets of CIV and N V seen at longer wavelengths, because the O VI absorption is usually saturated. Lyman beta absorption variability is more frequent. In a target-by-target examination we find that broad absorption line absorption and narrow absorption line absorbers are related in terms of maximum outflow velocity and luminosity, and both can be exhibited in similar luminosity objects. We also find one object that shows radial velocity change, seven objects that show equivalent width variability, and two objects that show either transverse velocity changes or a change in ionization.

  9. Structure of a Glomulin-RBX1-CUL1 Complex: Inhibition of a RING E3 Ligase through Masking of Its E2-Binding Surface

    SciTech Connect (OSTI)

    Duda, David M.; Olszewski, Jennifer L.; Tron, Adriana E.; Hammel, Michal; Lambert, Lester J.; Waddell, M. Brett; Mittag, Tanja; DeCaprio, James A.; Schulman, Brenda A. (BWH); (LBNL); (SJCH); (DFCI)

    2012-11-01T23:59:59.000Z

    The approximately 300 human cullin-RING ligases (CRLs) are multisubunit E3s in which a RING protein, either RBX1 or RBX2, recruits an E2 to catalyze ubiquitination. RBX1-containing CRLs also can bind Glomulin (GLMN), which binds RBX1's RING domain, regulates the RBX1-CUL1-containing SCF{sup FBW7} complex, and is disrupted in the disease Glomuvenous Malformation. Here we report the crystal structure of a complex between GLMN, RBX1, and a fragment of CUL1. Structural and biochemical analyses reveal that GLMN adopts a HEAT-like repeat fold that tightly binds the E2-interacting surface of RBX1, inhibiting CRL-mediated chain formation by the E2 CDC34. The structure explains the basis for GLMN's selectivity toward RBX1 over RBX2, and how disease-associated mutations disrupt GLMN-RBX1 interactions. Our study reveals a mechanism for RING E3 ligase regulation, whereby an inhibitor blocks E2 access, and raises the possibility that other E3s are likewise controlled by cellular proteins that mask E2-binding surfaces to mediate inhibition.

  10. Non-LTE model atmosphere analysis of the early ultraviolet spectra of nova OS Andromedae 1986

    E-Print Network [OSTI]

    Greg Schwarz; Peter H. Hauschildt; Sumner Starrfield; Eddie Baron; France Allard; Steve Shore; George Sonneborn

    1996-08-29T23:59:59.000Z

    We have analyzed the early optically thick ultraviolet spectra of Nova OS And 1986 using a grid of spherically symmetric, non-LTE, line-blanketed, expanding model atmospheres and synthetic spectra with the following set of parameters: $5,000\\le$ T$_{model}$ $\\le 60,000$K, solar abundances, $\\rho \\propto r^{-3}$, $\\v_{max} = 2000\\kms$, $L=6 \\times 10^{4}\\Lsun$, and a statistical or microturbulent velocity of 50 $\\kms$. We used the synthetic spectra to estimate the model parameters corresponding to the observed {\\it IUE} spectra. The fits to the observations were then iteratively improved by changing the parameters of the model atmospheres, in particular T$_{model}$ and the abundances, to arrive at the best fits to the optically thick pseudo-continuum and the features found in the {\\it IUE} spectra. The {\\it IUE} spectra show two different optically thick subphases. The earliest spectra, taken a few days after maximum optical light, show a pseudo-continuum created by overlapping absorption lines. The later observations, taken approximately 3 weeks after maximum light, show the simultaneous presence of allowed, semi-forbidden, and forbidden lines in the observed spectra. Analysis of these phases indicate that OS And 86 had solar metallicities except for Mg which showed evidence of being underabundant by as much as a factor of 10. We determine a distance of 5.1 kpc to OS And 86 and derive a peak bolometric luminosity of $\\sim$ 5 $\\times$ 10$^4$ L$_{\\odot}$. The computed nova parameters provide insights into the physics of the early outburst and explain the spectra seen by {\\it IUE}. Lastly, we find evidence in the later observations for large non-LTE effects of Fe{\\sc ii} which, when included, lead to much better agreement with the observations.

  11. Vacuum-Ultraviolet Photoionization and Mass Spectrometric Characterization of Lignin Monomers Coniferyl and Sinapyl Alcohols

    SciTech Connect (OSTI)

    Takahashi, Lynelle K.; Zhou, Jia; Kostko, Oleg; Golan, Amir; Leone, Stephen R.; Ahmed, Musahid

    2011-02-09T23:59:59.000Z

    The fragmentation mechanisms of monolignols under various energetic processes are studied with jet-cooled thermal desorption molecular beam (TDMB) mass spectrometry (MS), 25 keV Bi3+ secondary ion MS (SIMS), synchrotron vacuum-ultraviolet secondary neutral MS (VUV-SNMS) and theoretical methods. Experimental and calculated appearance energies of fragments observed in TDMB MS indicate that the coniferyl alcohol photoionization mass spectra contain the molecular parent and several dissociative photoionization products. Similar results obtained for sinapyl alcohol are also discussed briefly. Ionization energies of 7.60 eV ? 0.05 eV for coniferyl alcohol and<7.4 eV for both sinapyl and dihydrosinapyl alcohols are determined. The positive ion SIMS spectrum of coniferyl alcohol shares few characteristic peaks (m/z = 137 and 151) with the TDMB mass spectra, shows extensive fragmentation, and does not exhibit clear molecular parent signals. VUV-SNMS spectra, on the other hand, are dominated by the parent ion and main fragments also present in the TDMB spectra. Molecular fragmentation in VUV-SNMS spectra can be reduced by increasing the extraction delay time. Some features resembling the SIMS spectra are also observed in the desorbed neutral products. The monolignol VUV-SNMS peaks shared with the TDMB mass spectra suggest that dissociative photoionization of ion-sputtered neutral molecules predominate in the VUV-SNMS mass spectra, despite the extra internal energy imparted in the initial ion impact. The potential applications of these results to imaging mass spectrometry of bio-molecules are discussed.

  12. ACTIVE REGION MOSS: DOPPLER SHIFTS FROM HINODE/EXTREME-ULTRAVIOLET IMAGING SPECTROMETER OBSERVATIONS

    SciTech Connect (OSTI)

    Tripathi, Durgesh [Inter-University Centre for Astronomy and Astrophysics, Pune University Campus, Pune 411007 (India); Mason, Helen E. [Department of Applied Mathematics and Theoretical Physics, University of Cambridge, Wilberforce Road, Cambridge CB3 0WA (United Kingdom); Klimchuk, James A. [NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States)

    2012-07-01T23:59:59.000Z

    Studying the Doppler shifts and the temperature dependence of Doppler shifts in moss regions can help us understand the heating processes in the core of the active regions. In this paper, we have used an active region observation recorded by the Extreme-ultraviolet Imaging Spectrometer (EIS) on board Hinode on 2007 December 12 to measure the Doppler shifts in the moss regions. We have distinguished the moss regions from the rest of the active region by defining a low-density cutoff as derived by Tripathi et al. in 2010. We have carried out a very careful analysis of the EIS wavelength calibration based on the method described by Young et al. in 2012. For spectral lines having maximum sensitivity between log T = 5.85 and log T = 6.25 K, we find that the velocity distribution peaks at around 0 km s{sup -1} with an estimated error of 4-5 km s{sup -1}. The width of the distribution decreases with temperature. The mean of the distribution shows a blueshift which increases with increasing temperature and the distribution also shows asymmetries toward blueshift. Comparing these results with observables predicted from different coronal heating models, we find that these results are consistent with both steady and impulsive heating scenarios. However, the fact that there are a significant number of pixels showing velocity amplitudes that exceed the uncertainty of 5 km s{sup -1} is suggestive of impulsive heating. Clearly, further observational constraints are needed to distinguish between these two heating scenarios.

  13. FAR-ULTRAVIOLET OBSERVATIONS OF THE SPICA NEBULA AND THE INTERACTION ZONE

    SciTech Connect (OSTI)

    Choi, Yeon-Ju; Min, Kyoung-Wook; Lim, Tae-Ho; Jo, Young-Soo [Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Seon, Kwang-Il [Korea Astronomy and Space Science Institute (KASI), 61-1 Hwaam-dong, Yuseong-gu, Daejeon 305-348 (Korea, Republic of); Park, Jae-Woo, E-mail: zmzm83@kaist.ac.kr [Korea Intellectual Property Office (KIPO), Government Complex Daejeon Building 4, 189 Cheongsa-ro, Seo-gu, Daejeon 305-348 (Korea, Republic of)

    2013-09-01T23:59:59.000Z

    We report the analysis results of far-ultraviolet (FUV) observations, made for a broad region around {alpha} Vir (Spica) including the interaction zone of Loop I and the Local Bubble. The whole region was optically thin and a general correlation was seen between the FUV continuum intensity and the dust extinction, except in the neighborhood of the bright central star, indicating the dust scattering nature of the FUV continuum. We performed Monte Carlo radiative transfer simulations to obtain the optical parameters related to the dust scattering as well as to the geometrical structure of the region. The albedo and asymmetry factor were found to be 0.38 {+-} 0.06 and 0.46 {+-} 0.06, respectively, in good agreement with the Milky Way dust grain models. The distance to and the thickness of the interaction zone were estimated to be 70{sup +4}{sub -8} pc and 40{sup +8}{sub -10} pc, respectively. The diffuse FUV continuum in the northern region above Spica was mostly the result of scattering of the starlight from Spica, while that in the southern region was mainly due to the background stars. The C IV {lambda}{lambda}1548, 1551 emission was found throughout the whole region, in contrast to the Si II* {lambda}1532 emission which was bright only within the H II region. This indicates that the C IV line arises mostly at the shell boundaries of the bubbles, with a larger portion likely from the Loop I than from the Local Bubble side, whereas the Si II* line is from the photoionized Spica Nebula.

  14. Ultraviolet observations of Super-Chandrasekhar mass type Ia supernova candidates with swift UVOT

    SciTech Connect (OSTI)

    Brown, Peter J.; Smitka, Michael T.; Krisciunas, Kevin; Wang, Lifan [George P. and Cynthia Woods Mitchell Institute for Fundamental Physics and Astronomy, Texas A and M University, Department of Physics and Astronomy, 4242 TAMU, College Station, TX 77843 (United States); Kuin, Paul; De Pasquale, Massimiliano [Mullard Space Science Laboratory, University College London, Holmbury St. Mary, Dorking Surrey, RH5 6NT (United Kingdom); Scalzo, Richard [Research School of Astronomy and Astrophysics, The Australian National University, Mount Stromlo Observatory, Cotter Road, Weston Creek, ACT 2611 (Australia); Holland, Stephen [Space Telescope Science Center 3700 San Martin Drive, Baltimore, MD 21218 (United States); Milne, Peter, E-mail: pbrown@physics.tamu.edu [Steward Observatory, University of Arizona, Tucson, AZ 85719 (United States)

    2014-05-20T23:59:59.000Z

    Among Type Ia supernovae (SNe Ia), a class of overluminous objects exist whose ejecta mass is inferred to be larger than the canonical Chandrasekhar mass. We present and discuss the UV/optical photometric light curves, colors, absolute magnitudes, and spectra of three candidate Super-Chandrasekhar mass SNe—2009dc, 2011aa, and 2012dn—observed with the Swift Ultraviolet/Optical Telescope. The light curves are at the broad end for SNe Ia, with the light curves of SN 2011aa being among the broadest ever observed. We find all three to have very blue colors which may provide a means of excluding these overluminous SNe from cosmological analysis, though there is some overlap with the bluest of 'normal' SNe Ia. All three are overluminous in their UV absolute magnitudes compared to normal and broad SNe Ia, but SNe 2011aa and 2012dn are not optically overluminous compared to normal SNe Ia. The integrated luminosity curves of SNe 2011aa and 2012dn in the UVOT range (1600-6000 Å) are only half as bright as SN 2009dc, implying a smaller {sup 56}Ni yield. While it is not enough to strongly affect the bolometric flux, the early time mid-UV flux makes a significant contribution at early times. The strong spectral features in the mid-UV spectra of SNe 2009dc and 2012dn suggest a higher temperature and lower opacity to be the cause of the UV excess rather than a hot, smooth blackbody from shock interaction. Further work is needed to determine the ejecta and {sup 56}Ni masses of SNe 2011aa and 2012dn and to fully explain their high UV luminosities.

  15. Investigating the effective range of vacuum ultraviolet-mediated breakdown in high-power microwave metamaterials

    SciTech Connect (OSTI)

    Liu, Chien-Hao, E-mail: cliu82@wisc.edu; Neher, Joel D., E-mail: jdneher@wisc.edu; Booske, John H., E-mail: booske@engr.wisc.edu; Behdad, Nader, E-mail: behdad@wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706 (United States)

    2014-10-14T23:59:59.000Z

    Metamaterials and periodic structures operating under high-power excitations are susceptible to breakdown. It was recently demonstrated that a localized breakdown created in a given region of a periodic structure can facilitate breakdown in other regions of the structure where the intensity of the incident electromagnetic fields may not be high enough to cause breakdown under normal circumstances. It was also demonstrated that this phenomenon is due to the generation of vacuum ultraviolet radiation at the location of the initial discharge, which propagates to the neighboring regions (e.g., other unit cells in a periodic structure) and facilitates the generation of a discharge at a lower incident power level. In this paper, we present the results of an experimental study conducted to determine the effective range of this physical phenomenon for periodic structures that operate in air and in pure nitrogen gas at atmospheric pressure levels. It is demonstrated that when breakdown is induced in a periodic structure using a high-power pulse with a frequency of 9.382 GHz, duration of 0.8 ?s, and peak power level of 25 kW, this phenomenon is highly likely to happen in radii of approximately 16–17 mm from the location of the initial discharge under these test conditions. The results of this study are significant in designing metamaterials and periodic structures for high-power microwave applications as they suggest that a localized discharge created in such a periodic structure with a periodicity less than 16–17 mm can spread over a large surface and result in a distributed discharge.

  16. Resist-based measurement of contrast transfer function in a 0.3-NAmicrofield optic

    SciTech Connect (OSTI)

    Cain, Jason P.; Naulleau, Patrick; Spanos, Costas J.

    2005-01-11T23:59:59.000Z

    Although extreme ultraviolet (EUV) lithography offers the possibility of very high-resolution patterning, the projection optics must be of extremely high quality in order to meet this potential. One key metric of the projection optic quality is the contrast transfer function (CTF), which is a measure of the aerial image contrast as a function of pitch. A static microfield exposure tool based on the 0.3-NA MET optic and operating at a wavelength of 13.5 nm has been installed at the Advanced Light Source, a synchrotron facility at the Lawrence Berkeley National Laboratory. This tool provides a platform for a wide variety of research into EUV lithography. In this work we present resist-based measurements of the contrast transfer function for the MET optic. These measurements are based upon line/space patterns printed in several different EUV photoresists. The experimental results are compared with the CTF in aerial-image simulations using the aberrations measured in the projection optic using interferometry. In addition, the CTF measurements are conducted for both bright-field and dark-field mask patterns. Finally, the orientation dependence of the CTF is measured in order to evaluate the effect of non-rotationally symmetric lens aberrations. These measurements provide valuable information in interpreting the results of other experiments performed using the MET and similar systems.

  17. Spatio-temporal coherence of free-electron laser radiation in the extreme ultraviolet determined by a Michelson interferometer

    SciTech Connect (OSTI)

    Hilbert, V.; Rödel, C.; Zastrau, U., E-mail: ulf.zastrau@uni-jena.de [Institut für Optik und Quantenelektronik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, 07743 Jena (Germany); Brenner, G.; Düsterer, S.; Dziarzhytski, S.; Harmand, M.; Przystawik, A.; Redlin, H.; Toleikis, S. [Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg (Germany); Döppner, T.; Ma, T. [Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, California 94550 (United States); Fletcher, L. [Department of Physics, University of California, Berkeley, California 94720 (United States); Förster, E. [Institut für Optik und Quantenelektronik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, 07743 Jena (Germany); Helmholtz-Institut Jena, Fröbelstieg 3, 07743 Jena (Germany); Glenzer, S. H.; Lee, H. J. [SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Hartley, N. J. [Department of Physics, Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom); Kazak, L.; Komar, D.; Skruszewicz, S. [Institut für Physik, Universität Rostock, 18051 Rostock (Germany); and others

    2014-09-08T23:59:59.000Z

    A key feature of extreme ultraviolet (XUV) radiation from free-electron lasers (FELs) is its spatial and temporal coherence. We measured the spatio-temporal coherence properties of monochromatized FEL pulses at 13.5?nm using a Michelson interferometer. A temporal coherence time of (59±8) fs has been determined, which is in good agreement with the spectral bandwidth given by the monochromator. Moreover, the spatial coherence in vertical direction amounts to about 15% of the beam diameter and about 12% in horizontal direction. The feasibility of measuring spatio-temporal coherence properties of XUV FEL radiation using interferometric techniques advances machine operation and experimental studies significantly.

  18. Extreme ultraviolet ionization of pure He nanodroplets: Mass-correlated photoelectron imaging, Penning ionization, and electron energy-loss spectra

    SciTech Connect (OSTI)

    Buchta, D.; Stienkemeier, F.; Mudrich, M. [Physikalisches Institut, Universität Freiburg, 79104 Freiburg (Germany)] [Physikalisches Institut, Universität Freiburg, 79104 Freiburg (Germany); Krishnan, S. R.; Moshammer, R. [Max-Planck-Institut für Kernphysik, 69117 Heidelberg (Germany)] [Max-Planck-Institut für Kernphysik, 69117 Heidelberg (Germany); Brauer, N. B.; Drabbels, M. [Laboratoire de Chimie Physique Moléculaire, Swiss Federal Institute of Technology Lausanne (EPFL), 1015 Lausanne (Switzerland)] [Laboratoire de Chimie Physique Moléculaire, Swiss Federal Institute of Technology Lausanne (EPFL), 1015 Lausanne (Switzerland); O’Keeffe, P.; Coreno, M. [CNR Istituto di Metodologie Inorganiche e dei Plasmi, CP10, 00016 Monterotondo Scalo (Italy)] [CNR Istituto di Metodologie Inorganiche e dei Plasmi, CP10, 00016 Monterotondo Scalo (Italy); Devetta, M. [CIMAINA and Dipartimento di Fisica, Università di Milano, 20133 Milano (Italy)] [CIMAINA and Dipartimento di Fisica, Università di Milano, 20133 Milano (Italy); Di Fraia, M. [Department of Physics, University of Trieste, 34128 Trieste (Italy)] [Department of Physics, University of Trieste, 34128 Trieste (Italy); Callegari, C.; Richter, R.; Prince, K. C. [Elettra-Sincrotrone Trieste, 34149 Basovizza, Trieste (Italy)] [Elettra-Sincrotrone Trieste, 34149 Basovizza, Trieste (Italy); Ullrich, J. [Max-Planck-Institut für Kernphysik, 69117 Heidelberg (Germany) [Max-Planck-Institut für Kernphysik, 69117 Heidelberg (Germany); Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, D-38116 Braunschweig (Germany)

    2013-08-28T23:59:59.000Z

    The ionization dynamics of pure He nanodroplets irradiated by Extreme ultraviolet radiation is studied using Velocity-Map Imaging PhotoElectron-PhotoIon COincidence spectroscopy. We present photoelectron energy spectra and angular distributions measured in coincidence with the most abundant ions He{sup +}, He{sub 2}{sup +}, and He{sub 3}{sup +}. Surprisingly, below the autoionization threshold of He droplets, we find indications for multiple excitation and subsequent ionization of the droplets by a Penning-like process. At high photon energies we observe inelastic collisions of photoelectrons with the surrounding He atoms in the droplets.

  19. Spectral-phase interferometry for direct electric-field reconstruction applied to seeded extreme-ultraviolet free-electron lasers

    E-Print Network [OSTI]

    Mahieu, Benoît; De Ninno, Giovanni; Dacasa, Hugo; Lozano, Magali; Rousseau, Jean-Philippe; Zeitoun, Philippe; Garzella, David; Merdji, Hamed

    2015-01-01T23:59:59.000Z

    We present a setup for complete characterization of femtosecond pulses generated by seeded free-electron lasers (FEL's) in the extreme-ultraviolet spectral region. Two delayed and spectrally shifted replicas are produced and used for spectral phase interferometry for direct electric field reconstruction (SPIDER). We show that it can be achieved by a simple arrangement of the seed laser. Temporal shape and phase obtained in FEL simulations are well retrieved by the SPIDER reconstruction, allowing to foresee the implementation of this diagnostic on existing and future sources. This will be a significant step towards an experimental investigation and control of FEL spectral phase.

  20. Quality and Sensory Attributes of Shell Eggs Sanitized with a Combination of Hydrogen Peroxide and Ultraviolet Light

    E-Print Network [OSTI]

    Woodring, Kristy Senise

    2011-10-21T23:59:59.000Z

    of the microorganisms that are present (Rodriguez and Alberto, 2004). In 2009, ultraviolet-C (UV) light (wavelength of 254 nm) was approved as a non- thermal intervention technology that can be used for the decontamination of food surfaces by the United States... of eggs. Its ability to cause illness is related to its host and other virulence factors that allow it survive at the low pH values found in the gastrointestinal tract and its ability to subsequently multiply (Rodriguez and Alberto, 2004...

  1. Finite element simulation for ultraviolet excimer laser processing of patterned Si/SiGe/Si(100) heterostructures

    SciTech Connect (OSTI)

    Conde, J. C.; Chiussi, S.; Gontad, F.; Gonzalez, P. [Dpto. Fisica Aplicada, University of Vigo, E-36310 Vigo (Spain); Martin, E. [Dpto. Mecanica, Maquinas, Motores Termicos y Fluidos, University of Vigo, E-36310 Vigo (Spain); Serra, C. [CACTI, University of Vigo, E-36310 Vigo (Spain)

    2010-07-05T23:59:59.000Z

    Ultraviolet (UV) Excimer laser assisted processing is an alternative strategy for producing patterned silicon germanium heterostructures. We numerically analyzed the effects caused by pulsed 193 Excimer laser radiation impinging on patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bilayers deposited on a crystalline silicon substrate [Si(100)]. The proposed two dimensional axisymmetric numerical model allowed us to estimate the temperature and concentration gradients caused by the laser induced rapid melting and solidification processes. Energy density dependence of maximum melting depth and melting time evolution as well as three dimensional temperature and element distribution have been simulated and compared with experimentally obtained results.

  2. Ionization and dissociation dynamics of vinyl bromide probed by femtosecond extreme ultraviolet transient absorption spectroscopy

    SciTech Connect (OSTI)

    Lin, Ming-Fu; Neumark, Daniel M. [Ultrafast X-ray Science Laboratory, Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Ultrafast X-ray Science Laboratory, Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Chemistry, University of California, Berkeley, California 94720 (United States); Gessner, Oliver [Ultrafast X-ray Science Laboratory, Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)] [Ultrafast X-ray Science Laboratory, Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Leone, Stephen R. [Ultrafast X-ray Science Laboratory, Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Ultrafast X-ray Science Laboratory, Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Chemistry, University of California, Berkeley, California 94720 (United States); Department of Physics, University of California, Berkeley, California 94720 (United States)

    2014-02-14T23:59:59.000Z

    Strong-field induced ionization and dissociation dynamics of vinyl bromide, CH{sub 2}=CHBr, are probed using femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy. Strong-field ionization is initiated with an intense femtosecond, near infrared (NIR, 775 nm) laser field. Femtosecond XUV pulses covering the photon energy range of 50-72 eV probe the subsequent dynamics by measuring the time-dependent spectroscopic features associated with transitions of the Br (3d) inner-shell electrons to vacancies in molecular and atomic valence orbitals. Spectral signatures are observed for the depletion of neutral C{sub 2}H{sub 3}Br, the formation of C{sub 2}H{sub 3}Br{sup +} ions in their ground (X{sup ~}) and first excited (A{sup ~}) states, the production of C{sub 2}H{sub 3}Br{sup ++} ions, and the appearance of neutral Br ({sup 2}P{sub 3/2}) atoms by dissociative ionization. The formation of free Br ({sup 2}P{sub 3/2}) atoms occurs on a timescale of 330 ± 150 fs. The ionic A{sup ~} state exhibits a time-dependent XUV absorption energy shift of ?0.4 eV within the time window of the atomic Br formation. The yield of Br atoms correlates with the yield of parent ions in the A{sup ~} state as a function of NIR peak intensity. The observations suggest that a fraction of vibrationally excited C{sub 2}H{sub 3}Br{sup +} (A{sup ~}) ions undergoes intramolecular vibrational energy redistribution followed by the C–Br bond dissociation. The C{sub 2}H{sub 3}Br{sup +} (X{sup ~}) products and the majority of the C{sub 2}H{sub 3}Br{sup ++} ions are relatively stable due to a deeper potential well and a high dissociation barrier, respectively. The results offer powerful new insights about orbital-specific electronic processes in high field ionization, coupled vibrational relaxation and dissociation dynamics, and the correlation of valence hole-state location and dissociation in polyatomic molecules, all probed simultaneously by ultrafast table-top XUV spectroscopy.

  3. The Efficacy of Ultraviolet Radiation for Sterilizing Tools Used for Surgically Implanting Transmitters into Fish

    SciTech Connect (OSTI)

    Walker, Ricardo W.; Markillie, Lye Meng; Colotelo, Alison HA; Gay, Marybeth E.; Woodley, Christa M.; Brown, Richard S.

    2013-02-28T23:59:59.000Z

    Telemetry is frequently used to examine the behavior of fish, and the transmitters used are normally surgically implanted into the coelom of fish. Implantation requires the use of surgical tools such as scalpels, forceps, needle holders, and sutures. When several fish are implanted consecutively for large telemetry studies, it is common for surgical tools to be sterilized or, at minimum, disinfected between each use so that pathogens that may be present are not spread among fish. However, autoclaving tools can take a long period of time, and chemical sterilants or disinfectants can be harmful to both humans and fish and have varied effectiveness. Ultraviolet (UV) radiation is commonly used to disinfect water in aquaculture facilities. However, this technology has not been widely used to sterilize tools for surgical implantation of transmitters in fish. To determine its efficacy for this application, Pacific Northwest National Laboratory researchers used UV radiation to disinfect surgical tools (i.e., forceps, needle holder, stab scalpel, and suture) that were exposed to one of four aquatic organisms that typically lead to negative health issues for salmonids. These organisms included Aeromonas salmonicida, Flavobacterium psychrophilum, Renibacterium salmoninarum, and Saprolegnia parasitica. Surgical tools were exposed to the bacteria by dipping them into a confluent suspension of three varying concentrations (i.e., low, medium, high). After exposure to the bacterial culture, tools were placed into a mobile Millipore UV sterilization apparatus. The tools were then exposed for three different time periods—2, 5, or 15 min. S. parasitica, a water mold, was tested using an agar plate method and forceps-pinch method. UV light exposures of 5 and 15 min were effective at killing all four organisms. UV light was also effective at killing Geobacillus stearothermophilus, the organism used as a biological indicator to verify effectiveness of steam sterilizers. These techniques appear to provide a quick alternative disinfection technique for some surgical tools that is less harmful to both humans and fish while not producing chemical waste. However, we do not recommend using these methods with tools that have overlapping parts or other structures that cannot be directly exposed to UV light such as needle holders.

  4. HINODE/EXTREME-ULTRAVIOLET IMAGING SPECTROMETER OBSERVATIONS OF THE TEMPERATURE STRUCTURE OF THE QUIET CORONA

    SciTech Connect (OSTI)

    Brooks, David H.; Warren, Harry P. [Space Science Division, Code 7673, Naval Research Laboratory, Washington, DC 20375 (United States); Williams, David R. [Mullard Space Science Laboratory, University College London, Holmbury St Mary, Dorking, Surrey RH5 6NT (United Kingdom); Watanabe, Tetsuya, E-mail: dhbrooks@ssd5.nrl.navy.mi [National Astronomical Observatory of Japan, Osawa, Mitaka, Tokyo 181-8588 (Japan)

    2009-11-10T23:59:59.000Z

    We present a differential emission measure (DEM) analysis of the quiet solar corona on disk using data obtained by the Extreme-ultraviolet Imaging Spectrometer (EIS) on Hinode. We show that the expected quiet-Sun DEM distribution can be recovered from judiciously selected lines, and that their average intensities can be reproduced to within 30%. We present a subset of these selected lines spanning the temperature range log T = 5.6-6.4 K that can be used to derive the DEM distribution reliably, including a subset of iron lines that can be used to derive the DEM distribution free of the possibility of uncertainties in the elemental abundances. The subset can be used without the need for extensive measurements, and the observed intensities can be reproduced to within the estimated uncertainty in the pre-launch calibration of EIS. Furthermore, using this subset, we also demonstrate that the quiet coronal DEM distribution can be recovered on size scales down to the spatial resolution of the instrument (1'' pixels). The subset will therefore be useful for studies of small-scale spatial inhomogeneities in the coronal temperature structure, for example, in addition to studies requiring multiple DEM derivations in space or time. We apply the subset to 45 quiet-Sun data sets taken in the period 2007 January to April, and show that although the absolute magnitude of the coronal DEM may scale with the amount of released energy, the shape of the distribution is very similar up to at least log T approx 6.2 K in all cases. This result is consistent with the view that the shape of the quiet-Sun DEM is mainly a function of the radiating and conducting properties of the plasma and is fairly insensitive to the location and rate of energy deposition. This universal DEM may be sensitive to other factors such as loop geometry, flows, and the heating mechanism, but if so they cannot vary significantly from quiet-Sun region to region.

  5. INFRARED AND ULTRAVIOLET STAR FORMATION IN BRIGHTEST CLUSTER GALAXIES IN THE ACCEPT SAMPLE

    SciTech Connect (OSTI)

    Hoffer, Aaron S.; Donahue, Megan; Hicks, Amalia [Physics and Astronomy Department, Michigan State University, East Lansing, MI 48824-2320 (United States); Barthelemy, R. S., E-mail: hofferaa@msu.edu, E-mail: donahue@pa.msu.edu, E-mail: hicksam@msu.edu, E-mail: ramon.s.barthelemy@wmich.edu [Physics Department, Western Michigan University, Kalamazoo, MI 49008-5252 (United States)

    2012-03-01T23:59:59.000Z

    We present infrared (IR) and ultraviolet (UV) photometry for a sample of brightest cluster galaxies (BCGs). The BCGs are from a heterogeneous but uniformly characterized sample, the Archive of Chandra Cluster Entropy Profile Tables (ACCEPT), of X-ray galaxy clusters from the Chandra X-ray telescope archive with published gas temperature, density, and entropy profiles. We use archival Galaxy Evolution Explorer (GALEX), Spitzer Space Telescope, and Two Micron All Sky Survey (2MASS) observations to assemble spectral energy distributions (SEDs) and colors for BCGs. We find that while the SEDs of some BCGs follow the expectation of red, dust-free old stellar populations, many exhibit signatures of recent star formation in the form of excess UV or mid-IR emission, or both. We establish a mean near-UV (NUV) to 2MASS K color of 6.59 {+-} 0.34 for quiescent BCGs. We use this mean color to quantify the UV excess associated with star formation in the active BCGs. We use both fits to a template of an evolved stellar population and library of starburst models and mid-IR star formation relations to estimate the obscured star formation rates (SFRs). We show that many of the BCGs in X-ray clusters with low central gas entropy exhibit enhanced UV (38%) and mid-IR emission (43%) from 8 to 160 {mu}m, above that expected from an old stellar population. These excesses are consistent with ongoing star formation activity in the BCG, star formation that appears to be enabled by the presence of high-density, X-ray-emitting intergalactic gas in the core of the cluster of galaxies. This hot, X-ray-emitting gas may provide the enhanced ambient pressure and some of the fuel to trigger star formation. This result is consistent with previous works that showed that BCGs in clusters with low central gas entropies host H{alpha} emission-line nebulae and radio sources, while clusters with high central gas entropy exhibit none of these features. GALEX UV and Spitzer mid-IR measurements combined provide a complete picture of unobscured and obscured star formation occurring in these systems. We present IR and UV photometry and estimated equivalent continuous SFRs for a sample of BCGs.

  6. TWO TYPES OF EXTREME-ULTRAVIOLET BRIGHTENINGS IN AR 10926 OBSERVED BY HINODE/EIS

    SciTech Connect (OSTI)

    Lee, K.-S. [Department of Astronomy and Space Science, Kyung Hee University, Yongin 446-701 (Korea, Republic of); Moon, Y.-J.; Choe, G. S. [School of Space Research, Kyung Hee University, Yongin 446-701 (Korea, Republic of); Kim, Sujin; Cho, Kyung-Suk [Korea Astronomy and Space Science Institute, Daejeon 305-348 (Korea, Republic of); Imada, S., E-mail: lksun@khu.ac.kr [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara-shi, Kanagawa 252-5210 (Japan)

    2011-07-20T23:59:59.000Z

    We have investigated seven extreme-ultraviolet (EUV) brightenings in the active region AR 10926 on 2006 December 2 observed by the EUV Imaging Spectrometer on board the Hinode spacecraft. We have determined their Doppler velocities and non-thermal velocities from 15 EUV spectral lines (log T = 4.7 - 6.4) by fitting each line profile to a Gaussian function. The Doppler velocity maps for different temperatures are presented to show the height dependence of the Doppler shifts. It is found that the active region brightenings show two distinct Doppler shift patterns. The type 1 brightening shows a systematic increase of Doppler velocity from -68 km s{sup -1} (strong blueshift) at log T = 4.7 to -2 km s{sup -1} (weak blueshift) at log T = 6.4, while the type 2 brightenings have Doppler velocities in the range from -20 km s{sup -1} to 20 km s{sup -1}. The type 1 brightening point is considered to sit in an upward reconnection outflow whose speed decreases with height. In both types of brightenings, the non-thermal velocity is found to be significantly enhanced at log T = 5.8 compared to the background region. We have also determined electron densities from line ratios and derived temperatures from emission measure loci using the CHIANTI atomic database. The electron densities of all brightenings are comparable to typical values in active regions (log N{sub e} = 9.9-10.4). The emission measure loci plots indicate that these brightenings should be multi-thermal whereas the background is isothermal. The differential emission measure as a function of temperature shows multiple peaks in the EUV brightening regions, while it has only a single peak (log T = 6.0) in the background region. Using Michelson Doppler Imager magnetograms, we have found that the type 1 brightening is associated with a canceling magnetic feature with a flux canceling rate of 2.4 x 10{sup 18} Mx hr{sup -1}. We also found the canceling magnetic feature and chromospheric brightenings in the type 1 brightening from the Hinode SOT and Transition Region and Coronal Explorer data. This observation corroborates our argument that brightening is caused by magnetic reconnection in a low atmosphere.

  7. Ultraviolet Germicidal Irradiation and Its Effects on Elemental Distributions in Mouse Embryonic Fibroblast Cells in X-Ray Fluorescence Microanalysis

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jin, Qiaoling; Vogt, Stefan; Lai, Barry; Chen, Si; Finney, Lydia; Gleber, Sophie-Charlotte; Ward, Jesse; Deng, Junjing; Mak, Rachel; Moonier, Nena; et al

    2015-02-23T23:59:59.000Z

    Rapidly-frozen hydrated (cryopreserved) specimens combined with cryo-scanning x-ray fluorescence microscopy provide an ideal approach for investigating elemental distributions in biological cells and tissues. However, because cryopreservation does not deactivate potentially infectious agents associated with Risk Group 2 biological materials, one must be concerned with contamination of expensive and complicated cryogenic x-ray microscopes when working with such materials. We employed ultraviolet germicidal irradiation to decontaminate previously cryopreserved cells under liquid nitrogen, and then investigated its effects on elemental distributions under both frozen hydrated and freeze dried states with xray fluorescence microscopy. We show that the contents and distributions of most biologicallymore »important elements remain nearly unchanged when compared with non-ultravioletirradiated counterparts, even after multiple cycles of ultraviolet germicidal irradiation and cryogenic x-ray imaging. This provides a potential pathway for rendering Risk Group 2 biological materials safe for handling in multiuser cryogenic x-ray microscopes without affecting the fidelity of the results.« less

  8. Method for high-precision multi-layered thin film deposition for deep and extreme ultraviolet mirrors

    DOE Patents [OSTI]

    Ruffner, J.A.

    1999-06-15T23:59:59.000Z

    A method for coating (flat or non-flat) optical substrates with high-reflectivity multi-layer coatings for use at Deep Ultra-Violet (DUV) and Extreme Ultra-Violet (EUV) wavelengths. The method results in a product with minimum feature sizes of less than 0.10 [micro]m for the shortest wavelength (13.4 nm). The present invention employs a computer-based modeling and deposition method to enable lateral and vertical thickness control by scanning the position of the substrate with respect to the sputter target during deposition. The thickness profile of the sputter targets is modeled before deposition and then an appropriate scanning algorithm is implemented to produce any desired, radially-symmetric thickness profile. The present invention offers the ability to predict and achieve a wide range of thickness profiles on flat or figured substrates, i.e., account for 1/R[sup 2] factor in a model, and the ability to predict and accommodate changes in deposition rate as a result of plasma geometry, i.e., over figured substrates. 15 figs.

  9. Method for high-precision multi-layered thin film deposition for deep and extreme ultraviolet mirrors

    DOE Patents [OSTI]

    Ruffner, Judith Alison (Albuquerque, NM)

    1999-01-01T23:59:59.000Z

    A method for coating (flat or non-flat) optical substrates with high-reflectivity multi-layer coatings for use at Deep Ultra-Violet ("DUV") and Extreme Ultra-Violet ("EUV") wavelengths. The method results in a product with minimum feature sizes of less than 0.10-.mu.m for the shortest wavelength (13.4-nm). The present invention employs a computer-based modeling and deposition method to enable lateral and vertical thickness control by scanning the position of the substrate with respect to the sputter target during deposition. The thickness profile of the sputter targets is modeled before deposition and then an appropriate scanning algorithm is implemented to produce any desired, radially-symmetric thickness profile. The present invention offers the ability to predict and achieve a wide range of thickness profiles on flat or figured substrates, i.e., account for 1/R.sup.2 factor in a model, and the ability to predict and accommodate changes in deposition rate as a result of plasma geometry, i.e., over figured substrates.

  10. Modeling of EUV photoresists with a resist point spreadfunction

    SciTech Connect (OSTI)

    Cain, Jason P.; Naulleau, Patrick; Spanos, Costas J.

    2005-01-01T23:59:59.000Z

    Extreme ultraviolet (EUV) lithography is under development for possible deployment at the 32-nm technology node. One active area of research in this field is the development of photoresists that can meet the stringent requirements (high resolution, high sensitivity, low LER, etc.) of lithography in this regime. In order to facilitate research in this and other areas related to EUV lithography, a printing station based upon the 0.3-NA Micro Exposure Tool (MET) optic was established at the Advanced Light Source, a synchrotron facility at Lawrence Berkeley National Laboratory. A resist modeling technique using a resist point spread function has been shown to have good agreement with experiments for certain EUV resists such as Shipley EUV-2D [2]. The resist point spread function is a two-dimensional function that, when convolved with the simulated aerial image for a given mask pattern and applied to a threshold function, gives a representation of the photoresist pattern remaining after development. The simplicity of this modeling approach makes it attractive for rapid modeling of photoresists for process development applications. In this work, the resist point spread functions for three current high-resolution EUV photoresists [Rohm and Haas EUV-2D, Rohm and Haas MET-1K (XP 3454C), and KRS] are extracted experimentally. This model is then used in combination with aerial image simulations (including effects of projection optic aberrations) to predict the resist pattern for a variety of test patterns. A comparison is made between these predictions and experimental results to evaluate the effectiveness of this modeling technique for newer high-resolution EUV resists.

  11. Evaluation of a Combined Ultraviolet Photocatalytic Oxidation(UVPCO)/Chemisorbent Air Cleaner for Indoor Air Applications

    SciTech Connect (OSTI)

    Hodgson, Alfred T.; Destaillats, Hugo; Hotchi, Toshifumi; Fisk,William J.

    2007-02-01T23:59:59.000Z

    We previously reported that gas-phase byproducts of incomplete oxidation were generated when a prototype ultraviolet photocatalytic oxidation (UVPCO) air cleaner was operated in the laboratory with indoor-relevant mixtures of VOCs at realistic concentrations. Under these conditions, there was net production of formaldehyde and acetaldehyde, two important indoor air toxicants. Here, we further explore the issue of byproduct generation. Using the same UVPCO air cleaner, we conducted experiments to identify common VOCs that lead to the production of formaldehyde and acetaldehyde and to quantify their production rates. We sought to reduce the production of formaldehyde and acetaldehyde to acceptable levels by employing different chemisorbent scrubbers downstream of the UVPCO device. Additionally, we made preliminary measurements to estimate the capacity and expected lifetime of the chemisorbent media. For most experiments, the system was operated at 680-780 m{sup 3}/h (400-460 cfm). A set of experiments was conducted with common VOCs introduced into the UVPCO device individually and in mixture. Compound conversion efficiencies and the production of formaldehyde and acetaldehyde were determined by comparison of compound concentrations upstream and downstream of the reactor. There was general agreement between compound conversions efficiencies determined individually and in the mixture. This suggests that competition among compounds for active sites on the photocatalyst surface will not limit the performance of the UVPCO device when the total VOC concentration is low. A possible exception was the very volatile alcohols, for which there were some indications of competitive adsorption. The results also showed that formaldehyde was produced from many commonly encountered VOCs, while acetaldehyde was generated by specific VOCs, particularly ethanol. The implication is that formaldehyde concentrations are likely to increase when an effective UVPCO air cleaner is used in buildings containing typical VOC sources. The magnitude of the expected increase will depend upon a number of interrelated factors. Series of experiments were conducted to determine if the oxidizer, sodium permanganate (NaMnO{sub 4}{center_dot}H{sub 2}O), has sufficient reaction rates and capacity to counteract formaldehyde and acetaldehyde production and enable a 50 % reduction in building ventilation rate without net increases in indoor aldehyde concentrations. A commercially produced filter element and two laboratory-fabricated media beds containing NaMnO{sub 4}{center_dot}H{sub 2}O chemisorbent media were evaluated. The effectiveness of a device for removal of formaldehyde, acetaldehyde and other VOCs was determined by measurement of concentrations immediately upstream and downstream of the device. In some experiments, conversion efficiencies and byproduct generation by the UVPCO device also were determined. Six experiments were conducted with the commercial filter element installed downstream of the UVPCO reactor. Eleven experiments were conducted with a single panel media bed (30 cm by 61 cm by 2.5 cm deep) installed downstream of the UVPCO reactor; in these, the effects of temperature and air residence time on conversion efficiency were examined. Two experiments were conducted with a four-panel, folded, media bed (approximately four times the size of the single panel bed) installed downstream of the reactor. Because the commercial unit contained activated carbon as an additional component, it was effective at removing lower volatility compounds that typically have low oxidation rates in the UVPCO reactor. The filter element also met the minimum efficiency objective for formaldehyde. However, the removal of acetaldehyde was less than required. The air residence time in the single panel bed was not optimized as the removal efficiencies for both formaldehyde and acetaldehyde were strongly inversely related to the air flow rate through the device. In addition, the acetaldehyde removal efficiency decreased to less than 10% with extended use of the device. The fold

  12. Projection optics box

    DOE Patents [OSTI]

    Hale, Layton C. (Livermore, CA); Malsbury, Terry (Tracy, CA); Hudyma, Russell M. (San Ramon, CA); Parker, John M. (Tracy, CA)

    2000-01-01T23:59:59.000Z

    A projection optics box or assembly for use in an optical assembly, such as in an extreme ultraviolet lithography (EUVL) system using 10-14 nm soft x-ray photons. The projection optics box utilizes a plurality of highly reflective optics or mirrors, each mounted on a precision actuator, and which reflects an optical image, such as from a mask, in the EUVL system onto a point of use, such as a target or silicon wafer, the mask, for example, receiving an optical signal from a source assembly, such as a developed from laser system, via a series of highly reflective mirrors of the EUVL system. The plurality of highly reflective optics or mirrors are mounted in a housing assembly comprised of a series of bulkheads having wall members secured together to form a unit construction of maximum rigidity. Due to the precision actuators, the mirrors must be positioned precisely and remotely in tip, tilt, and piston (three degrees of freedom), while also providing exact constraint.

  13. Development of photo-patterned composite structures in microchannels for oil reservoir research

    E-Print Network [OSTI]

    Lee, Hyundo

    2014-01-01T23:59:59.000Z

    Starting from unstructured glass microchannels, we develop a new method of micromodel fabrication. We build composite structures in a bottom-up manner with ultraviolet projection lithography where the composite structures ...

  14. Cold-target recoil-ion momentum spectroscopy for diagnostics of high harmonics of the extreme-ultraviolet free-electron laser light source at SPring-8

    SciTech Connect (OSTI)

    Liu, X.-J.; Fukuzawa, H.; Pruemper, G.; Ueda, K. [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577 (Japan); RIKEN, XFEL Project Head Office, Kouto 1-1-1, Sayo, Hyogo 679-5148 (Japan); Okunishi, M.; Shimada, K. [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577 (Japan); Motomura, K.; Saito, N. [RIKEN, XFEL Project Head Office, Kouto 1-1-1, Sayo, Hyogo 679-5148 (Japan); National Metrology Institute of Japan, AIST, Tsukuba 305-8568 (Japan); Iwayama, H.; Nagaya, K.; Yao, M. [RIKEN, XFEL Project Head Office, Kouto 1-1-1, Sayo, Hyogo 679-5148 (Japan); Department of Physics, Kyoto University, Kyoto 606-8502 (Japan); Rudenko, A. [RIKEN, XFEL Project Head Office, Kouto 1-1-1, Sayo, Hyogo 679-5148 (Japan); Max Planck Advanced Study Group, CFEL, D-22607, Hamburg (Germany); Ullrich, J. [RIKEN, XFEL Project Head Office, Kouto 1-1-1, Sayo, Hyogo 679-5148 (Japan); Max Planck Advanced Study Group, CFEL, D-22607, Hamburg (Germany); Max Planck-Insitut fuer Kernphysik, D-69117 Heidelberg (Germany); Foucar, L. [RIKEN, XFEL Project Head Office, Kouto 1-1-1, Sayo, Hyogo 679-5148 (Japan); Institut fuer Kernphysik, Universitaet Frankfurt, D-60486 Frankfurt (Germany); Czasch, A.; Schmidt-Boecking, H.; Doerner, R. [Institut fuer Kernphysik, Universitaet Frankfurt, D-60486 Frankfurt (Germany); Nagasono, M.; Higashiya, A.; Yabashi, M. [RIKEN, XFEL Project Head Office, Kouto 1-1-1, Sayo, Hyogo 679-5148 (Japan); and others

    2009-05-15T23:59:59.000Z

    We have developed a cold-target recoil-ion momentum spectroscopy apparatus dedicated to the experiments using the extreme-ultraviolet light pulses at the free-electron laser facility, SPring-8 Compact SASE Source test accelerator, in Japan and used it to measure spatial distributions of fundamental, second, and third harmonics at the end station.

  15. Efficient compact watt-level deep-ultraviolet laser generated from a multi-kHz Q-switched diode-pumped

    E-Print Network [OSTI]

    Kung, Andy

    W of 213 nm radiation were generated from a fundamental power of 7 W of 1064 nm light at 5 kHz. The overall-4018(02)01669-3 #12;the resonance condition increases the UV pulse duration. As a result, the peak power density 2002; accepted 10 June 2002 Abstract Stable high-power operation in the deep ultraviolet is achieved

  16. High Energy Neutrino Flashes from Far-Ultraviolet and X-ray Flares in Gamma-Ray Bursts

    E-Print Network [OSTI]

    Kohta Murase; Shigehiro Nagataki

    2006-08-07T23:59:59.000Z

    The recent observations of bright optical and x-ray flares by the Swift satellite suggest these are produced by the late activities of the central engine. We study the neutrino emission from far-ultraviolet and x-ray flares under the late internal shock model. We show that the efficiency of pion production in the highest energy is comparable to or higher than the unity, and the contribution from such neutrino flashes to a diffuse very high energy neutrino background can be larger than that of prompt bursts if the total baryonic energy input into flares is comparable to the radiated energy of prompt bursts. These signals may be detected by IceCube and are very important because they have possibilities to probe the nature of flares (the baryon loading, the photon field, the magnetic field and so on).

  17. Extended-range grazing-incidence spectrometer for high-resolution extreme ultraviolet measurements on an electron beam ion trap

    SciTech Connect (OSTI)

    Beiersdorfer, P.; Magee, E. W.; Brown, G. V.; Träbert, E.; Widmann, K. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Hell, N. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Dr. Remeis-Sternwarte and ECAP, Universität Erlangen-Nürnberg, 96049 Bamberg (Germany)

    2014-11-15T23:59:59.000Z

    A high-resolution grazing-incidence grating spectrometer has been implemented on the Livermore electron beam ion traps for performing very high-resolution measurements in the soft x-ray and extreme ultraviolet region spanning from below 10 Å to above 300 Å. The instrument operates without an entrance slit and focuses the light emitted by highly charged ions located in the roughly 50 ?m wide electron beam onto a cryogenically cooled back-illuminated charge-coupled device detector. The measured line widths are below 0.025 Å above 100 Å, and the resolving power appears to be limited by the source size and Doppler broadening of the trapped ions. Comparisons with spectra obtained with existing grating spectrometers show an order of magnitude improvement in spectral resolution.

  18. Effect of ultraviolet and x-ray radiation on the work function of TiO{sub 2} surfaces

    SciTech Connect (OSTI)

    Gutmann, S. [Department of Chemistry, University of South Florida, Tampa, Florida 33620 (United States); Wolak, M. A.; Beerbom, M. M.; Schlaf, R. [Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States); Conrad, M. [Department of Mechanical Engineering, University of South Florida, Tampa, Florida 33620 (United States)

    2010-05-15T23:59:59.000Z

    The work functions of nanocrystalline anatase (TiO{sub 2}) thin films and a rutile single crystal were measured using photoemission spectroscopy (PES). The nanocrystalline titanium dioxide films were deposited in-vacuum using electrospray thin film deposition. A comparison between ultraviolet photoemission spectroscopy (UPS) and low intensity x-ray photoemission spectroscopy (LIXPS) work function measurements on these samples revealed a strong, immediate, and permanent work function reduction (>0.5 eV) caused by the UPS measurements. Furthermore, it was found that regular XPS measurements also reduce the work function after exposure times ranging from seconds to minutes. These effects are similar in magnitude to artifacts seen previously on indium tin oxide (ITO) substrates characterized with XPS and UPS, and are likely related to the formation of a surface dipole through the photochemical hydroxylation of oxygen vacancies present on the TiO{sub 2} surface.

  19. High blue-near ultraviolet photodiode response of vertically stacked graphene-MoS{sub 2}-metal heterostructures

    SciTech Connect (OSTI)

    Wi, Sungjin; Chen, Mikai; Nam, Hongsuk; Liu, Amy C.; Meyhofer, Edgar; Liang, Xiaogan, E-mail: xiaoganl@umich.edu [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2014-06-09T23:59:59.000Z

    We present a study on the photodiode response of vertically stacked graphene/MoS{sub 2}/metal heterostructures in which MoS{sub 2} layers are doped with various plasma species. In comparison with undoped heterostructures, such doped ones exhibit significantly improved quantum efficiencies in both photovoltaic and photoconductive modes. This indicates that plasma-doping-induced built-in potentials play an important role in photocurrent generation. As compared to indium-tin-oxide/ MoS{sub 2}/metal structures, the presented graphene/MoS{sub 2}/metal heterostructures exhibit greatly enhanced quantum efficiencies in the blue-near ultraviolet region, which is attributed to the low density of recombination centers at graphene/MoS{sub 2} heterojunctions. This work advances the knowledge for making photo-response devices based on layered materials.

  20. Effect of aerosols and NO2 concentration on ultraviolet actinic flux near Mexico City during MILAGRO: Measurements and model calculations

    SciTech Connect (OSTI)

    Palancar, Gustavo G.; Lefer, Barry; Hall, Samual R.; Shaw, William J.; Corr, Chelsea A.; Herndon, Scott C.; Slusser, J. R.; Madronich, Sasha

    2013-01-24T23:59:59.000Z

    Ultraviolet (UV) actinic ?uxes (AF) measured with three Scanning Actinic Flux Spectroradiometers (SAFS) are compared with the Tropospheric Ultraviolet-Visible (TUV) model v.5 in order to assess the effects of aerosols and NO2 concentrations on the radiation. Measurements were made during the MILAGRO campaign near Mexico City in March 2006, at a ground-based station near Mexico City (the T1 supersite) and from the NSF/NCAR C-130 aircraft. At the surface, measurements are typically smaller by up to 25 % in the morning, 10% at noon, and 40% in the afternoon, than actinic flux modeled for clean, cloud-free conditions. When measurements of PBL height, NO2 concentration and aerosols optical properties are included in the model, the agreement improves to within ±10% in the morning and afternoon, and ±3% at noon. Based on daily averages, aerosols account for 68%, NO2 for 25%, and residual uncertainties for 7% of these AF reductions observed at the surface. Several overpasses from the C-130 aircraft provided the opportunity to examine the actinic flux perturbations aloft, and also show better agreement with the model when aerosol and NO2 effects are included above and below the flight altitude. TUV model simulations show that the vertical structure of the actinic flux is sensitive to the choice of the aerosol single scattering albedo (SSA) at UV wavelengths. Typically, aerosols caused enhanced AF above the PBL and reduced AF near the surface. However, for highly scattering aerosols (SSA > 0.95), enhancements can penetrate well into the PBL, while for strongly absorbing aerosols (SSA<0.7) reductions in AF are computed in the free troposphere as well as in the PBL. Additional measurements of the SSA at these wavelengths are needed to better constrain the effect of aerosols on the vertical structure of the actinic flux.

  1. Photodissociation dynamics of C{sub 3}H{sub 5}I in the near-ultraviolet region

    SciTech Connect (OSTI)

    Sumida, Masataka; Hanada, Takuya; Yamasaki, Katsuyoshi; Kohguchi, Hiroshi, E-mail: kohguchi@hiroshima-u.ac.jp [Department of Chemistry, Graduate School of Science, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima, Hiroshima 739-8526 (Japan)

    2014-09-14T23:59:59.000Z

    The ultraviolet photodissociation dynamics of allyl iodide (C{sub 3}H{sub 5}I) have been studied by ion-imaging at 266 nm and 213 nm. These photolysis wavelengths are located in the two lowest absorption bands in the near-ultraviolet region. The atomic iodine products were detected by [2+1] resonantly enhanced multiphoton ionization spectroscopy. The spectra showed that the branching fraction for the spin-orbit excited ({sup 2}P{sub 1/2}) state was larger than that for the ground ({sup 2}P{sub 3/2}) state at both photolysis wavelengths. The state-resolved scattering images of iodine showed two maxima in the velocity distributions in the {sup 2}P{sub 3/2} state and a single peak in the {sup 2}P{sub 1/2} state. The spin-orbit specificity indicates that the C?I bond cleavage at both absorption bands is governed by the dissociative n{sub I}?{sup *}{sub C?I} potential energy surfaces. The nascent internal energy distribution of the allyl radical (C{sub 3}H{sub 5}) counter product, which was obtained by the analysis of the state-resolved scattering distributions, showed a marked difference between the photolysis at 266 nm and 213 nm. The generation of the colder C{sub 3}H{sub 5} with the higher translational energy at 266 nm implied the direct photoexcitation to the n{sub I}?{sup *}{sub C?I} repulsive surfaces, whereas the internally hot C{sub 3}H{sub 5} at 213 nm was ascribed to the local ?{sub CC}?{sup *}{sub CC} photoinitiation in the allyl framework followed by predissociation to the n{sub I}?{sup *}{sub C?I} states.

  2. A SEARCH FOR LYMAN BREAK GALAXIES IN THE CHANDRA DEEP FIELD SOUTH USING SWIFT ULTRAVIOLET/OPTICAL TELESCOPE

    SciTech Connect (OSTI)

    Basu-Zych, Antara R.; Hornschemeier, Ann E. [NASA Goddard Space Flight Center, Code 662, Greenbelt, MD 20771 (United States); Hoversten, Erik A.; Gronwall, Caryl [Department of Astronomy and Astrophysics, Pennsylvania State University, 525 Davey Laboratory, University Park, PA 16802 (United States); Lehmer, Bret, E-mail: antara.r.basu-zych@nasa.gov, E-mail: Ann.Hornschemeier@nasa.gov, E-mail: hoversten@astro.psu.edu, E-mail: caryl@astro.psu.edu, E-mail: blehmer@pha.jhu.edu [Department of Physics and Astronomy, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218 (United States)

    2011-10-01T23:59:59.000Z

    While the Swift satellite is primarily designed to study gamma-ray bursts, its ultraviolet and optical imaging and spectroscopy capabilities are also being used for a variety of scientific programs. In this study, we use the UV/Optical Telescope (UVOT) instrument on board Swift to discover 0.5 < z < 2 Lyman break galaxies (LBGs). UVOT has covered {approx}266 arcmin{sup 2} at >60 ks exposure time, achieving a limiting magnitude of u < 24.5, in the Chandra Deep Field South (CDF-S). Applying UVOT near-ultraviolet color selection, we select 50 UV-dropouts from this UVOT CDF-S data. We match the selected sources with available multiwavelength data from Great Observatories Origins Deep Survey (GOODS) South, Multiwavelength Survey by Yale-Chile, and COMBO-17 to characterize the spectral energy distributions for these galaxies and determine stellar masses, star formation rates (SFRs), and dust attenuations. We compare these properties for LBGs selected in this paper versus z {approx} 3 LBGs and other CDF-S galaxies in the same redshift range (0.5 < z < 2), identified using photometric redshift techniques. The z {approx} 1 LBGs have stellar masses of (logM{sub *}/M{sub sun}) = 9.4 {+-} 0.6, which is slightly lower than z {approx} 3 LBGs ((logM{sub *}/Ms{sub un}) = 10.2 {+-} 0.4) and slightly higher compared with the z {approx} 1 CDF-S galaxies ((logM{sub *}/M{sub sun}) = 8.7 {+-} 0.7). Similarly, our sample of z {approx} 1 LBGs has SFRs (derived using both ultraviolet and infrared data, where available) of (logSFR/(M{sub sun} yr{sup -1})) = 0.7 {+-} 0.6, nearly an order of magnitude lower than z {approx} 3 LBGs ((logSFR/M{sub sun} yr{sup -1}) = 1.5 {+-} 0.4), but slightly higher than the comparison z {approx} 1 sample of CDF-S galaxies ((logSFR/M{sub sun} yr{sup -1}) = 0.2 {+-} 0.7). We find that our z {approx} 1 UV-dropouts have (A{sub FUV}) = 2.0 {+-} 1.0, which is higher than z {approx} 3 LBGs ((A{sub FUV}) = 1.0 {+-} 0.5), but similar to the distribution of dust attenuations in the other CDF-S galaxies ((A{sub FUV}) {approx} 2.8 {+-} 1.5). Using the GOODS-South multiwavelength catalog of galaxies, we simulate a larger and fainter sample of LBGs to compare their properties with those of the UVOT-selected LBG sample. We conclude that UVOT can be useful for finding and studying the bright end of 0.5 < z < 2.0 LBGs.

  3. Self-heating study of an AlGaN/GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering

    E-Print Network [OSTI]

    Holtz, Mark

    Self-heating study of an AlGaN/GaN-based heterostructure field-effect transistor using ultraviolet We report micro-Raman studies of self-heating in an AlGaN/GaN heterostructure field-effect transistorC substrate, at the same lateral position. Combined, we depth profile the self-heating. Measured T in the 2DEG

  4. Proceedings of the eighth international colloquium on ultraviolet and x-ray spectroscopy of astrophysical and laboratory plasmas (IAU colloquium 86)

    SciTech Connect (OSTI)

    Not Available

    1984-01-01T23:59:59.000Z

    This volume represents the Proceedings of the Eighth International Colloquium on Ultraviolet and X-Ray Spectroscopy of Astrophysical and Laboratory Plasmas. The aim of this series of colloquia has been to bring together workers in the fields of astrophysical spectroscopy, laboratory spectroscopy and atomic physics in order to exchange ideas and results on problems which are common to these different disciplines. In addition to the presented papers there was a poster paper session. (WRF)

  5. Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption In this paper, we present four GaN based polar quantum structures grown on c-plane embedded in p-i-n diode GaN/AlGaN quantum structures for operation in the deep-UV spectral region and the other three

  6. Engineering of AlGaN-Delta-GaN Quantum-Well Gain Media for Mid-and Deep-Ultraviolet Lasers

    E-Print Network [OSTI]

    Gilchrist, James F.

    Engineering of AlGaN-Delta-GaN Quantum-Well Gain Media for Mid- and Deep-Ultraviolet Lasers Volume.1109/JPHOT.2013.2248705 1943-0655/$31.00 Ó2013 IEEE #12;Engineering of AlGaN-Delta-GaN Quantum-Well Gain@Lehigh.Edu). Abstract: The gain characteristics of AlGaN-delta-GaN quantum wells (QWs) with varying delta-GaN positions

  7. HST polarization map of the ultraviolet emission from the outer jet in M87 and a comparison with the 2cm radio emission

    E-Print Network [OSTI]

    R. C. Thomson; D. R. T. Robinson; N. R. Tanvir; C. D. Mackay; A. Boksenberg

    1995-05-26T23:59:59.000Z

    We present the first high resolution polarization map of the ultraviolet emission from the outer jet in M87. The data were obtained by the Faint Object Camera (FOC) on the Hubble Space Telescope. The polarization map has a resolution of 0.2 arcsec and was derived using data from three linearly polarized images combined with the best available calibration data. The ultraviolet emission is highly polarized (~40\\%) with the magnetic vector aligned roughly with the jet axis, except in the region of the brightest knot (Knot A) where the position angle changes abruptly and the magnetic vector becomes perpendicular to the jet axis. A similar behaviour is seen in the 2cm VLA radio polarization map. By aligning the FOC and VLA data, we present ultraviolet--2cm spectral index, depolarization and rotation measure maps. We identify a region of high depolarization adjacent to Knot A. This is the first direct observational evidence that indicates the presence of a cloud or filament of dense thermal material which is mixed with the synchrotron emitting plasma of the jet. The interaction of the jet with this cloud is likely to be responsible for the sudden increase in the brightness of the jet at Knot A due to an induced shock. We suggest that the dark line seen in the 2cm radio data between Knot A and Knot C could be the shadow or magnetotail of the depolarizing cloud in the jet.

  8. Importance of Biologically Active Aurora-like Ultraviolet Emission: Stochastic Irradiation of Earth and Mars by Flares and Explosions

    E-Print Network [OSTI]

    David S. Smith; John Scalo; J. Craig Wheeler

    2003-07-30T23:59:59.000Z

    (Abridged) We show that sizeable fractions of incident ionizing radiation from stochastic astrophysical sources can be redistributed to biologically and chemically important UV wavelengths, a significant fraction of which can reach the surface. This redistribution is mediated by secondary electrons, resulting from Compton scattering and X-ray photoabsorption, with energies low enough to excite atmospheric molecules and atoms, resulting in a rich aurora-like spectrum. We calculate the fraction of energy redistributed into biologically and chemically important wavelength regions for spectra characteristic of stellar flares and supernovae using a Monte-Carlo transport code written for this problem and then estimate the fraction of this energy that is transmitted from the atmospheric altitudes of redistribution to the surface for a few illustrative cases. Redistributed fractions are found to be of order 1%, even in the presence of an ozone shield. This result implies that planetary organisms will be subject to mutationally significant, if intermittent, fluences of UV-B and harder radiation even in the presence of a narrow-band UV shield like ozone. We also calculate the surficial transmitted fraction of ionizing radiation and redistributed ultraviolet radiation for two illustrative evolving Mars atmospheres whose initial surface pressures were 1 bar. Our results suggest that coding organisms on planets orbiting low-mass stars (and on the early Earth) may evolve very differently than on contemporary Earth, with diversity and evolutionary rate controlled by a stochastically varying mutation rate and frequent hypermutation episodes.

  9. SWIFT ULTRAVIOLET/OPTICAL TELESCOPE IMAGING OF STAR-FORMING REGIONS IN M81 AND HOLMBERG IX

    SciTech Connect (OSTI)

    Hoversten, E. A.; Gronwall, C.; Siegel, M. H. [Department of Astronomy and Astrophysics, Pennsylvania State University, 525 Davey Laboratory, University Park, PA 16802 (United States); Vanden Berk, D. E. [Physics Department, St. Vincent College, Latrobe, PA 15650 (United States); Basu-Zych, A. R. [NASA/Goddard Space Flight Center, Greenbelt, MD 20771 (United States); Breeveld, A. A.; Kuin, N. P. M.; Page, M. J. [Mullard Space Science Laboratory/UCL, Holbury St. Mary, Dorking, Surrey RH5 6NT (United Kingdom); Brown, P. J. [Department of Physics and Astronomy, University of Utah, Salt Lake City, UT 84112 (United States); Roming, P. W. A. [Space Science and Engineering Division, Southwest Research Institute, 6220 Culebra Road, San Antonio, TX 78238 (United States)

    2011-06-15T23:59:59.000Z

    We present Swift UV/Optical Telescope (UVOT) imaging of the galaxies M81 and Holmberg IX. We combine UVOT imaging in three near-ultraviolet (NUV) filters (uvw2: 1928 A; uvm2: 2246 A; uvw1: 2600 A) with ground-based optical imaging from the Sloan Digital Sky Survey to constrain the stellar populations of both galaxies. Our analysis consists of three different methods. First, we use the NUV imaging to identify UV star-forming knots and then perform spectral energy distribution (SED) modeling on the UV/optical photometry of these sources. Second, we measure surface brightness profiles of the disk of M81 in the NUV and optical. Lastly, we use SED fitting of individual pixels to map the properties of the two galaxies. In agreement with earlier studies, we find evidence for a burst in star formation in both galaxies starting {approx}200 Myr ago coincident with the suggested time of an M81-M82 interaction. In line with theories of its origin as a tidal dwarf, we find that the luminosity-weighted age of Holmberg IX is a few hundred million years. Both galaxies are best fit by a Milky Way dust extinction law with a prominent 2175 A bump. In addition, we describe a stacked median filter technique for modeling the diffuse background light within a galaxy and a Markov chain method for cleaning segment maps generated by SExtractor.

  10. Detection of magnetic dipole lines of Fe XII in the ultraviolet spectrum of the dwarf star Epsilon Eri

    E-Print Network [OSTI]

    C. Jordan; A. D. McMurry; S. A. Sim; M. Arulvel

    2001-01-17T23:59:59.000Z

    We report observations of the dwarf star Epsilon Eri (K2 V) made with the Space Telescope Imaging Spectrograph (STIS) on the Hubble Space Telescope (HST). The high sensitivity of the STIS instrument has allowed us to detect the magnetic dipole transitions of Fe XII at 1242.00A and 1349.38A for the first time in a star other than the Sun. The width of the stronger line at 1242.00A has also been measured; such measurements are not possible for the permitted lines of Fe XII in the extreme ultraviolet. To within the accurcy of the measurements, the N V and the Fe XII lines occur at their rest wavelengths. Electron densities and line widths have been measured from other transition region lines. Together, these can be used to investigate the non-thermal energy flux in the lower and upper transition region, which is useful in constraining possible heating processes. The Fe XII lines are also present in archival STIS spectra of other G/K-type dwarfs.

  11. An upper limit on the ratio between the Extreme Ultraviolet and the bolometric luminosities of stars hosting habitable planets

    E-Print Network [OSTI]

    Sengupta, Sujan

    2015-01-01T23:59:59.000Z

    A large number of terrestrial planets in the classical habitable zone of stars of different spectral types has already been discovered and many are expected to be discovered in near future. However, owing to the lack of knowledge on the atmospheric properties, the ambient environment of such planets are unknown. It is known that sufficient amount of Extreme Ultraviolet (EUV) radiation from the star can drive hydrodynamic outflow of hydrogen that may drag heavier species from the atmosphere of the planet. If the rate of mass loss is sufficiently high then substantial amount of volatiles would escape causing the planet to become uninhabitable. Considering energy-limited hydrodynamical mass loss with an escape rate that causes oxygen to escape along with hydrogen, I present an upper limit for the ratio between the EUV and the bolometric luminosities of stars which constrains the habitability of planets around them. Application of the limit to planet-hosting stars with known EUV luminosities implies that many M-t...

  12. Ejecta Particle-Size Measurements in Vacuum and Helium Gas using Ultraviolet In-Line Fraunhofer Holography

    SciTech Connect (OSTI)

    Sorenson, Danny S. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Pazuchanics, Peter [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Johnson, Randall P. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Malone, R. M. [National Security Technologies, LLC. (NSTec), Los Alamos, NM (United States); Kaufman, M. I. [National Security Technologies, LLC. (NSTec), Los Alamos, NM (United States); Tibbitts, A. [National Security Technologies, LLC. (NSTec), Los Alamos, NM (United States); Tunnell, T. [National Security Technologies, LLC. (NSTec), Los Alamos, NM (United States); Marks, D. [National Security Technologies, LLC. (NSTec), Los Alamos, NM (United States); Capelle, G. A. [National Security Technologies, LLC. (NSTec), Santa Barbara, CA (United States); Grover, M. [National Security Technologies, LLC. (NSTec), Santa Barbara, CA (United States); Marshall, B. [National Security Technologies, LLC. (NSTec), Santa Barbara, CA (United States); Stevens, G. D. [National Security Technologies, LLC. (NSTec), Santa Barbara, CA (United States); Turley, W. D. [National Security Technologies, LLC. (NSTec), Santa Barbara, CA (United States); LaLone, B. [National Security Technologies, LLC. (NSTec), Santa Barbara, CA (United States)

    2014-06-25T23:59:59.000Z

    An Ultraviolet (UV) in-line Fraunhofer holography diagnostic has been developed for making high-resolution spatial measurements of ejecta particles traveling at many mm/?sec. This report will discuss the development of the diagnostic including the high-powered laser system and high-resolution optical relay system. In addition, the system required to reconstruct the images from the hologram and the corresponding analysis of those images to extract particles will also be described. Finally, results from six high-explosive (HE), shock-driven Sn ejecta experiments will be presented. Particle size distributions will be shown that cover most of the ejecta velocities for experiments conducted in a vacuum, and helium gas environments. In addition, a modification has been made to the laser system that produces two laser pulses separated by 6.8 ns. This double-pulsed capability allows a superposition of two holograms to be acquired at two different times, thus allowing ejecta velocities to be measured directly. Results from this double pulsed experiment will be described.

  13. Desorption Dynamics, Internal Energies and Imaging of Organic Molecules from Surfaces with Laser Desorption and Vacuum Ultraviolet (VUV) Photoionization

    SciTech Connect (OSTI)

    Kostko, Oleg; Takahashi, Lynelle K.; Ahmed, Musahid

    2011-04-05T23:59:59.000Z

    There is enormous interest in visualizing the chemical composition of organic material that comprises our world. A convenient method to obtain molecular information with high spatial resolution is imaging mass spectrometry. However, the internal energy deposited within molecules upon transfer to the gas phase from a surface can lead to increased fragmentation and to complications in analysis of mass spectra. Here it is shown that in laser desorption with postionization by tunable vacuum ultraviolet (VUV) radiation, the internal energy gained during laser desorption leads to minimal fragmentation of DNA bases. The internal temperature of laser-desorbed triacontane molecules approaches 670 K, whereas the internal temperature of thymine is 800 K. A synchrotron-based VUV postionization technique for determining translational temperatures reveals that biomolecules have translational temperatures in the range of 216-346 K. The observed low translational temperatures, as well as their decrease with increased desorption laser power is explained by collisional cooling. An example of imaging mass spectrometry on an organic polymer, using laser desorption VUV postionization shows 5 mu m feature details while using a 30 mu m laser spot size and 7 ns duration. Applications of laser desorption postionization to the analysis of cellulose, lignin and humic acids are briefly discussed.

  14. Improving metastable impact electron spectroscopy and ultraviolet photoelectron spectroscopy signals by means of a modified time-of-flight separation

    SciTech Connect (OSTI)

    Spirkl, Florian M.; Kunz, Sebastian; Schweinberger, Florian F.; Farnbacher, Adrian N.; Schroeter, Richard; Heiz, Ulrich [Technische Universitaet Muenchen, Department Chemie, Lichtenbergstrasse 4, D-85748 Garching (Germany)

    2012-01-15T23:59:59.000Z

    The separation of ultraviolet photoelectron spectroscopy (UPS) and metastable impact electron spectroscopy (MIES) is usually performed by a time-of-flight (ToF) separation using pre-set ToF for both types of signal. In this work, we present a new, improved ex situ signal separation method for the separation of MIES and UPS for every single measurement. Signal separation issues due to changes of system parameters can be overcome by changing the ToF separation and therefore allowing for the application of a wider range of measuring conditions. The method also enables to identify and achieve separation of the two signals without any time consuming calibration and the use of any special material for the calibration. Furthermore, changes made to the discharge source are described that enable to operate an existing MIES/UPS source over a broader range of conditions. This allows for tuning of the yield of UV photons and metastable rare gas atoms leading to an improved signal to noise ratio. First results of this improved setup are well in agreement with spectra reported in literature and show increased resolution and higher signal intensities for both MIE and UP spectra compared to the previous, non-optimized setup.

  15. DIFFRACTION, REFRACTION, AND REFLECTION OF AN EXTREME-ULTRAVIOLET WAVE OBSERVED DURING ITS INTERACTIONS WITH REMOTE ACTIVE REGIONS

    SciTech Connect (OSTI)

    Shen Yuandeng; Liu Yu; Zhao Ruijuan; Tian Zhanjun [Yunnan Astronomical Observatory, Chinese Academy of Sciences, Kunming 650011 (China); Su Jiangtao [Key Laboratory of Solar Activity, Chinese Academy of Sciences, Beijing 100012 (China); Li Hui [Key Laboratory of Dark Matter and Space Astronomy, Chinese Academy of Sciences, Nanjing 210008 (China); Ichimoto, Kiyoshi; Shibata, Kazunari, E-mail: ydshen@ynao.ac.cn [Kwasan and Hida Observatories, Kyoto University, Kyoto 6078471 (Japan)

    2013-08-20T23:59:59.000Z

    We present observations of the diffraction, refraction, and reflection of a global extreme-ultraviolet (EUV) wave propagating in the solar corona. These intriguing phenomena are observed when the wave interacts with two remote active regions, and together they exhibit properties of an EUV wave. When the wave approached AR11465, it became weaker and finally disappeared in the active region, but a few minutes later a new wavefront appeared behind the active region, and it was not concentric with the incoming wave. In addition, a reflected wave was also simultaneously observed on the wave incoming side. When the wave approached AR11459, it transmitted through the active region directly and without reflection. The formation of the new wavefront and the transmission could be explained with diffraction and refraction effects, respectively. We propose that the different behaviors observed during the interactions may be caused by different speed gradients at the boundaries of the two active regions. We find that the EUV wave formed ahead of a group of expanding loops a few minutes after the start of the loops' expansion, which represents the initiation of the associated coronal mass ejection (CME). Based on these results, we conclude that the EUV wave should be a nonlinear magnetosonic wave or shock driven by the associated CME, which propagated faster than the ambient fast mode speed and gradually slowed down to an ordinary linear wave. Our observations support the hybrid model that includes both fast wave and slow non-wave components.

  16. High-performance solar-blind ultraviolet photodetector based on mixed-phase ZnMgO thin film

    SciTech Connect (OSTI)

    Fan, M. M. [Graduate University of the Chinese Academy of Sciences, Beijing 100049 (China); State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, 130033 Changchun (China); Liu, K. W., E-mail: liukw@ciomp.ac.cn, E-mail: shendz@ciomp.ac.cn; Zhang, Z. Z.; Li, B. H.; Chen, X.; Zhao, D. X.; Shan, C. X.; Shen, D. Z., E-mail: liukw@ciomp.ac.cn, E-mail: shendz@ciomp.ac.cn [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, 130033 Changchun (China)

    2014-07-07T23:59:59.000Z

    High Mg content mixed-phase Zn{sub 0.38}Mg{sub 0.62}O was deposited on a-face sapphire by plasma-assisted molecular beam epitaxy, based on which a metal-semiconductor-metal solar-blind ultraviolet (UV) photodetector was fabricated. The dark current is only 0.25?pA at 5?V, which is much lower than that of the reported mixed-phase ZnMgO photodetectors. More interestingly, different from the other mixed-phase ZnMgO photodetectors containing two photoresponse bands, this device shows only one response peak and its ?3?dB cut-off wavelength is around 275?nm. At 10?V, the peak responsivity is as high as 1.664?A/W at 260?nm, corresponding to an internal gain of ?8. The internal gain is mainly ascribed to the interface states at the grain boundaries acting as trapping centers of photogenerated holes. In view of the advantages of mixed-phase ZnMgO photodetectors over single-phase ZnMgO photodetectors, including easy fabrication, high responsivity, and low dark current, our findings are anticipated to pave a new way for the development of ZnMgO solar-blind UV photodetectors.

  17. Ejecta Particle-Size Measurements in Vacuum and Helium Gas using Ultraviolet In-Line Fraunhofer Holography

    SciTech Connect (OSTI)

    Sorenson, D. S. [LANL; Pazuchanics, P. [LANL; Johnson, R. [LANL; Malone, R. M. [NSTec; Kaufman, M. I. [NSTec; Tibbitts, A. [NSTec; Tunnell, T. [NSTec; Marks, D. [NSTec; Capelle, G. A. [NSTec; Grover, M. [NSTec; Marshall, B. [NSTec; Stevens, G. D. [NSTec; Turley, W. D. [NSTec; LaLone, B. [NSTec

    2014-06-30T23:59:59.000Z

    An ultraviolet (UV) in-line Fraunhofer holography diagnostic has been developed for making high-resolution spatial measurements of ejecta particles traveling at many mm/?sec. This report will discuss the development of the diagnostic, including the high-powered laser system and high-resolution optical relay system. In addition, we will also describe the system required to reconstruct the images from the hologram and the corresponding analysis of those images to extract particles. Finally, we will present results from six high-explosive (HE), shock-driven Sn-ejecta experiments. Particle-size distributions will be shown that cover most of the ejecta velocities for experiments conducted in a vacuum, and helium gas environments. In addition, a modification has been made to the laser system that produces two laser pulses separated by 6.8 ns. This double-pulsed capability allows a superposition of two holograms to be acquired at two different times, thus allowing ejecta velocities to be measured directly. Results from this double-pulsed experiment will be described.

  18. Optical and ultraviolet observations of the narrow-lined type Ia SN 2012fr in NGC 1365

    SciTech Connect (OSTI)

    Zhang, Ju-Jia; Bai, Jin-Ming; Wang, Bo; Liu, Zheng-Wei [Yunnan Observatories (YNAO), Chinese Academy of Sciences, Kunming 650011 (China); Wang, Xiao-Feng; Zhao, Xu-Lin; Chen, Jun-Cheng [Physics Department and Tsinghua Center for Astrophysics (THCA), Tsinghua University, Beijing 100084 (China); Zhang, Tian-Meng, E-mail: jujia@ynao.ac.cn, E-mail: baijinming@ynao.ac.cn, E-mail: wang_xf@mail.tsinghua.edu.cn [National Astronomical Observatories of China (NAOC), Chinese Academy of Sciences, Beijing 100012 (China)

    2014-07-01T23:59:59.000Z

    Extensive optical and ultraviolet (UV) observations of the type Ia supernova (SN Ia) 2012fr are presented in this paper. It has a relatively high luminosity, with an absolute B-band peak magnitude of about –19.5 mag and a smaller post-maximum decline rate than normal SNe Ia (e.g., ?m {sub 15}(B) =0.85 ± 0.05 mag). Based on the UV and optical light curves, we derived that a {sup 56}Ni mass of about 0.88 M {sub ?} was synthesized in the explosion. The earlier spectra are characterized by noticeable high-velocity features of Si II ?6355 and Ca II with velocities in the range of ?22, 000-25, 000 km s{sup –1}. At around the maximum light, these spectral features are dominated by the photospheric components which are noticeably narrower than normal SNe Ia. The post-maximum velocity of the photosphere remains almost constant at ?12,000 km s{sup –1} for about one month, reminiscent of the behavior of some luminous SNe Ia like SN 1991T. We propose that SN 2012fr may represent a subset of the SN 1991T-like SNe Ia viewed in a direction with a clumpy or shell-like structure of ejecta, in terms of a significant level of polarization reported in Maund et al. in 2013.

  19. A simple electron time-of-flight spectrometer for ultrafast vacuum ultraviolet photoelectron spectroscopy of liquid solutions

    SciTech Connect (OSTI)

    Arrell, C. A., E-mail: christopher.arrell@epfl.ch; Ojeda, J.; Mourik, F. van; Chergui, M. [Laboratory of Ultrafast Spectroscopy, ISIC, Station 6, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne (Switzerland); Sabbar, M.; Gallmann, L.; Keller, U. [Physics Department, ETH Zurich, 8093 Zurich (Switzerland); Okell, W. A.; Witting, T.; Siegel, T.; Diveki, Z.; Hutchinson, S.; Tisch, J. W.G.; Marangos, J. P. [Department of Physics, The Blackett Laboratory, Imperial College, London SW7 2AZ (United Kingdom); Chapman, R. T.; Cacho, C.; Rodrigues, N.; Turcu, I. C.E.; Springate, E. [Central Laser Facility, STFC Rutherford Appleton Laboratory, Oxon OX11 0QX (United Kingdom)

    2014-10-15T23:59:59.000Z

    We present a simple electron time of flight spectrometer for time resolved photoelectron spectroscopy of liquid samples using a vacuum ultraviolet (VUV) source produced by high-harmonic generation. The field free spectrometer coupled with the time-preserving monochromator for the VUV at the Artemis facility of the Rutherford Appleton Laboratory achieves an energy resolution of 0.65 eV at 40 eV with a sub 100 fs temporal resolution. A key feature of the design is a differentially pumped drift tube allowing a microliquid jet to be aligned and started at ambient atmosphere while preserving a pressure of 10{sup ?1} mbar at the micro channel plate detector. The pumping requirements for photoelectron (PE) spectroscopy in vacuum are presented, while the instrument performance is demonstrated with PE spectra of salt solutions in water. The capability of the instrument for time resolved measurements is demonstrated by observing the ultrafast (50 fs) vibrational excitation of water leading to temporary proton transfer.

  20. The Ultraviolet Emission Properties of Five Low-Redshift Active Galactic Nuclei at High Signal to Noise and Spectral Resolution

    E-Print Network [OSTI]

    Ari Laor; John N. Bahcall; Buell T. Jannuzi; Donald P. Schneider; Richard F. Green; George F. Hartig

    1993-05-21T23:59:59.000Z

    We analyze the ultraviolet (UV) emission line and continuum properties of five low-redshift active galactic nuclei (four luminous quasars: PKS~0405$-$123, H1821+643, PG~0953+414, and 3C273, and one bright Seyfert 1 galaxy: Mrk~205). The HST spectra have higher signal-to-noise ratios (typically $\\sim 60$ per resolution element) and spectral resolution ($R = 1300$) than all previously- published UV spectra used to study the emission characteristics of active galactic nuclei. We include in the analysis ground-based optical spectra covering \\hb\\ and the narrow [O III] $\\lambda\\lambda$4959,5007 doublet. The following new results are obtained: \\lyb/\\lya=0.03$-$0.12 for the four quasars, which is the first accurate measurement of the long-predicted \\lyb\\ intensity in QSOs. The cores of \\lya\\ and C~IV are symmetric to an accuracy of better than 2.5% within about 2000 km s$^{-1}$ of the line peak. This high degree of symmetry of \\lya\\ argues against models in which the broad line cloud velocity field has a significant radial component. The observed smoothness of the \\lya\\ and C~IV line profiles requires at least $\\sim 10^4$ individual clouds if bulk velocity is the only line-broadening mechanism. The overall similarity of the \\lya\\ and C IV $\\lambda$1549 profiles rules out models for the broad line region (BLR) with a radial distribution of virialized....