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Sample records for transparent conducting oxide

  1. Precise Application of Transparent Conductive Oxide Coatings...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Precise Application of Transparent Conductive Oxide Coatings for Flat Panel Displays and Photovoltaic Cells Technology available for licensing: New transparent conducting oxide ...

  2. Transparent conducting oxides and production thereof

    DOE Patents [OSTI]

    Gessert, Timothy A.; Yoshida, Yuki; Coutts, Timothy J.

    2014-06-10

    Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber. The method may also comprise depositing a metal oxide on the target in the process chamber to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

  3. Transparent conducting oxides and production thereof

    DOE Patents [OSTI]

    Gessert, Timothy A; Yoshida, Yuki; Coutts, Timothy J

    2014-05-27

    Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target (110) doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber (100). The method may also comprise depositing a metal oxide on the target (110) to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

  4. High quality transparent conducting oxide thin films

    DOE Patents [OSTI]

    Gessert, Timothy A.; Duenow, Joel N.; Barnes, Teresa; Coutts, Timothy J.

    2012-08-28

    A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

  5. Nanostructured transparent conducting oxide electrochromic device

    DOE Patents [OSTI]

    Milliron, Delia; Tangirala, Ravisubhash; Llordes, Anna; Buonsanti, Raffaella; Garcia, Guillermo

    2016-05-17

    The embodiments described herein provide an electrochromic device. In an exemplary embodiment, the electrochromic device includes (1) a substrate and (2) a film supported by the substrate, where the film includes transparent conducting oxide (TCO) nanostructures. In a further embodiment, the electrochromic device further includes (a) an electrolyte, where the nanostructures are embedded in the electrolyte, resulting in an electrolyte, nanostructure mixture positioned above the substrate and (b) a counter electrode positioned above the mixture. In a further embodiment, the electrochromic device further includes a conductive coating deposited on the substrate between the substrate and the mixture. In a further embodiment, the electrochromic device further includes a second substrate positioned above the mixture.

  6. Controlling Surface Properties of Transparent Conducting Oxides | ANSER

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Center | Argonne-Northwestern National Laboratory Controlling Surface Properties of Transparent Conducting Oxides Home > Research > ANSER Research Highlights > Controlling Surface Properties of Transparent Conducting Oxides

  7. High carrier concentration p-type transparent conducting oxide films

    DOE Patents [OSTI]

    Yan, Yanfa; Zhang, Shengbai

    2005-06-21

    A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.

  8. Synthesis of transparent conducting oxide coatings

    DOE Patents [OSTI]

    Elam, Jeffrey W.; Martinson, Alex B. F.; Pellin, Michael J.; Hupp, Joseph T.

    2010-05-04

    A method and system for preparing a light transmitting and electrically conductive oxide film. The method and system includes providing an atomic layer deposition system, providing a first precursor selected from the group of cyclopentadienyl indium, tetrakis (dimethylamino) tin and mixtures thereof, inputting to the deposition system the first precursor for reaction for a first selected time, providing a purge gas for a selected time, providing a second precursor comprised of an oxidizer, and optionally inputting a second precursor into the deposition system for reaction and alternating for a predetermined number of cycles each of the first precursor, the purge gas and the second precursor to produce the oxide film.

  9. Precise Application of Transparent Conductive Oxide Coatings for Flat Panel

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Displays and Photovoltaic Cells | Argonne National Laboratory Precise Application of Transparent Conductive Oxide Coatings for Flat Panel Displays and Photovoltaic Cells Technology available for licensing: New transparent conducting oxide (TCO) coatings are deposited using atomic layer deposition (ALD). Provides uniform coating of complex, 3D nanostructures such as electrodes for next-generation PV cells Improved coating precision uses less material and reduces cost PDF icon

  10. Transparent Conducting Oxide - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... dielectric permittivity when produced as an oxide, such as materials comprising certain metals, rare earth elements, and lathanides, and the oxides of these elements. ...

  11. III-V/Si Wafer Bonding Using Transparent, Conductive Oxide Interlayers...

    Office of Scientific and Technical Information (OSTI)

    III-VSi Wafer Bonding Using Transparent, Conductive Oxide Interlayers; Article No. 263904 Citation Details In-Document Search Title: III-VSi Wafer Bonding Using Transparent, ...

  12. Precise Application of Transparent Conductive Oxide Coatings for Flat Panel

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Displays and Photovoltaic Cells - Energy Innovation Portal Solar Photovoltaic Solar Photovoltaic Advanced Materials Advanced Materials Find More Like This Return to Search Precise Application of Transparent Conductive Oxide Coatings for Flat Panel Displays and Photovoltaic Cells Argonne National Laboratory Contact ANL About This Technology <p align="center"> New <em>ALD reaction chamber containing 12-in x 12-in piece of plate glass</em></p> New ALD reaction

  13. High-performance, transparent conducting oxides based on cadmium stannate

    SciTech Connect (OSTI)

    Coutts, T.J.; Wu, X.; Mulligan, W.P.; Webb, J.M.

    1996-06-01

    We discuss the modeling of thin films of transparent conducting oxides and we compare the predictions with the observed properties of cadmium stannate. Thin films of this material were deposited using radio-frequency magnetron sputtering. The Drude free-carrier model is used to model the optical and electrical properties. The model demonstrates the need for high mobilities. The free-carrier absorbance in the visible spectrum is used as a comparative figure-of-merit for cadmium stannate and tin oxide. This shows that free-carrier absorbance is much less in cadmium stannate than in tin oxide. X-ray diffraction shows that annealed films consist of a single-phase spinel structure. The post-deposition annealing sequence is shown to be crucial to forming a single phase, which is vital for optimal optical and electrical properties. The films are typically high mobility (up to 65 cm{sup 2}V{sup -1}s{sup -1}) and have carrier concentrations as high as 10{sup 21} cm{sup -3}. Resistivities are as low as 1.3 10{sup -4} {Omega} cm, the lowest values reported for cadmium stannate. Atomic force microscopy indicates that the root-mean-square surface roughness is approximately {+-}15A. Cadmium stannate etches readily in both hydrofluoric and hydrochloric acid, which is a commanding advantage over tin oxide. 11 refs., 15 figs.

  14. Magnetic transparent conducting oxide film and method of making

    DOE Patents [OSTI]

    Windisch, Jr., Charles F.; Exarhos, Gregory J.; Sharma, Shiv K.

    2004-07-13

    Cobalt-nickel oxide films of nominal 100 nm thickness, and resistivity as low as 0.06 .OMEGA..multidot.cm have been deposited by spin-casting from both aqueous and organic precursor solutions followed by annealing at 450.degree. C. in air. Films deposited on sapphire substrates exhibit a refractive index of about 1.7 and are relatively transparent in the wavelength region from 0.6 to 10.0 .mu.m. They are also magnetic. The electrical and spectroscopic properties of the oxides have been studied as a function of x=Co/(Co+Ni) ratio. An increase in film resistivity was found upon substitution of other cations (e.g., Zn.sup.2+, Al.sup.3+) for Ni in the spinel structure. However, some improvement in the mechanical properties of the films resulted. On the other hand, addition of small amounts of Li decreased the resistivity. A combination of XRD, XPS, UV/Vis and Raman spectroscopy indicated that NiCo.sub.2 O.sub.4 is the primary conducting component and that the conductivity reaches a maximum at this stoichiometry. When x<0.67, NiO forms leading to an increase in resistivity; when x>0.67, the oxide was all spinel but the increased Co content lowered the conductivity. The influence of cation charge state and site occupancy in the spinel structure markedly affects calculated electron band structures and contributes to a reduction of p-type conductivity, the formation of polarons, and the reduction in population of mobile charge carriers that tend to limit transmission in the infrared.

  15. Method for producing high carrier concentration p-Type transparent conducting oxides

    DOE Patents [OSTI]

    Li, Xiaonan; Yan, Yanfa; Coutts, Timothy J.; Gessert, Timothy A.; Dehart, Clay M.

    2009-04-14

    A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.

  16. Method of forming macro-structured high surface area transparent conductive oxide electrodes

    DOE Patents [OSTI]

    Forman, Arnold J.; Chen, Zhebo; Jaramillo, Thomas F.

    2016-01-05

    A method of forming a high surface area transparent conducting electrode is provided that includes depositing a transparent conducting thin film on a conductive substrate, where the transparent conducting thin film includes transparent conductive particles and a solution-based transparent conducting adhesive layer which serves to coat and bind together the transparent conducting particles, and heat treating the transparent conducting adhesion layer on the conductive substrate, where an increased surface area transparent conducting electrode is formed.

  17. Magnetic Transparent Conducting Oxide Film And Method Of Making

    DOE Patents [OSTI]

    Windisch, Jr., Charles F. (Richland, WA); Exarhos, Gregory J. (Richland, WA); Sharma, Shiv K. (Honolulu, HI)

    2006-03-14

    Cobalt-nickel oxide films of nominal 100 nm thickness, and resistivity as low as 0.06 Ocm have been deposited by spin-casting from both aqueous and organic precursor solutions followed by annealing at 450 C. in air. An increase in film resistivity was found upon substitution of other cations (e.g., Zn2+, Al3+) for Ni in the spinel structure. However, some improvement in the mechanical properties of the films resulted. On the other hand, addition of small amounts of Li decreased the resistivity. A combination of XRD, XPS, UV/Vis and Raman spectroscopy indicated that NiCo2O4 is the primary conducting component and that the conductivity reaches a maximum at this stoichiometry. When x<0.67, NiO forms leading to an increase in resistivity; when x>0.67, the oxide was all spinel but the increased Co content lowered the conductivity.

  18. Magnetic Transparent Conducting Oxide Film And Method Of Making

    DOE Patents [OSTI]

    Windisch, Jr., Charles F.; Exarhos, Gregory J.; Sharma, Shiv K.

    2006-03-14

    Cobalt-nickel oxide films of nominal 100 nm thickness, and resistivity as low as 0.06 O·cm have been deposited by spin-casting from both aqueous and organic precursor solutions followed by annealing at 450° C. in air. An increase in film resistivity was found upon substitution of other cations (e.g., Zn2+, Al3+) for Ni in the spinel structure. However, some improvement in the mechanical properties of the films resulted. On the other hand, addition of small amounts of Li decreased the resistivity. A combination of XRD, XPS, UV/Vis and Raman spectroscopy indicated that NiCo2O4 is the primary conducting component and that the conductivity reaches a maximum at this stoichiometry. When x<0.67, NiO forms leading to an increase in resistivity; when x>0.67, the oxide was all spinel but the increased Co content lowered the conductivity.

  19. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    DOE Patents [OSTI]

    Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

    2010-07-13

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  20. Impacts of humidity and temperature on the performance of transparent conducting zinc oxide.

    SciTech Connect (OSTI)

    Granata, Jennifer E.; Yaklin, Melissa A.; Schneider, Duane Allen; Staiger, Chad Lynn; Norman, Kirsten

    2010-06-01

    The impact of humidity and temperature on a zinc oxide based transparent conducting oxide (TCO) was assessed under accelerated aging conditions. An in situ electroanalytical method was used to monitor the electrical properties for a conducting zinc oxide under controlled atmospheric (humidity, temperature and irradiation) conditions. A review of thin film photovoltaic (PV) literature has shown one major failure mode of cells/modules is associated with the ingress of water into modules in the field. Water contamination has been shown to degrade the performance of the TCO in addition to corroding interconnects and other conductive metals/materials associated with the module. Water ingress is particularly problematic in flexible thin film PV modules since traditional encapsulates such as poly(ethyl vinyl acetate) (EVA) have high water vapor transmission rates. The accelerated aging studies of the zinc oxide based TCOs will allow acceleration factors and kinetic parameters to be determined for reliability purposes.

  1. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Malasi, A.; Taz, H.; Farah, A.; Patel, M.; Lawrie, Benjamin; Pooser, R.; Baddorf, A.; Duscher, G.; Kalyanaraman, R.

    2015-12-16

    We report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104 S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergentmore » semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. In conclusion, since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.« less

  2. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

    SciTech Connect (OSTI)

    Malasi, A.; Taz, H.; Farah, A.; Patel, M.; Lawrie, Benjamin; Pooser, R.; Baddorf, A.; Duscher, G.; Kalyanaraman, R.

    2015-12-16

    We report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104 S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. In conclusion, since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.

  3. Damp-Heat Induced Degradation of Transparent Conducting Oxides for Thin Film Solar Cells (Presentation)

    SciTech Connect (OSTI)

    Pern, J.; Noufi, R.; Li, X.; DeHart, C.; To, B.

    2008-05-01

    The objectives are: (1) To achieve a high long-term performance reliability for the thin-film CIGS PV modules with more stable materials, device structure designs, and moisture-resistant encapsulation materials and schemes; (2) to evaluate the DH stability of various transparent conducting oxides (TCOs); (3) to identify the degradation mechanisms and quantify degradation rates; (4) to seek chemical and/or physical mitigation methods, and explore new materials. It's important to note that direct exposure to DH represents an extreme condition that a well-encapsulated thin film PV module may never experience.

  4. Perovskite Sr-doped LaCrO3 as a new p-type transparent conducting oxide

    SciTech Connect (OSTI)

    Zhang, Hongliang; Du, Yingge; Papadogianni, Alexandra; Bierwagen, Oliver; Sallis, Shawn; Piper, Louis F. J.; Bowden, Mark E.; Shutthanandan, V.; Sushko, Petr; Chambers, Scott A.

    2015-09-16

    Transparent conducting oxides (TCOs) constitute a unique class of materials which combine the seemingly mutually exclusive properties of electrical conductivity and optical transparency in a single material. TCOs are useful for a wide range of applications including solar cells, displays, light emitting diodes and transparent electronics. Simple post-transition metal oxides such as ZnO, In2O3 and SnO2 are wide gap insulators in which the ionic character generates an oxygen 2p-derived valence band (VB) and a metal s-derived conduction band (CB), resulting in large optical band gaps (>3.0 eV) and excellent n-type conductivity when donor doped. In contrast, the development of efficient p-type TCOs remains a global materials challenge. Converting n-type oxides to p-type analogs by acceptor doping is extremely difficult and these materials display poor conductivity.

  5. Data Mining-Aided Crystal Engineering for the Design of Transparent Conducting Oxides: Preprint

    SciTech Connect (OSTI)

    Suh, C.; Kim, K.; Berry, J. J.; Lee, J.; Jones, W. B.

    2010-12-01

    The purpose of this paper is to accelerate the pace of material discovery processes by systematically visualizing the huge search space that conventionally needs to be explored. To this end, we demonstrate not only the use of empirical- or crystal chemistry-based physical intuition for decision-making, but also to utilize knowledge-based data mining methodologies in the context of finding p-type delafossite transparent conducting oxides (TCOs). We report on examples using high-dimensional visualizations such as radial visualization combined with machine learning algorithms such as k-nearest neighbor algorithm (k-NN) to better define and visualize the search space (i.e. structure maps) of functional materials design. The vital role of search space generated from these approaches is discussed in the context of crystal chemistry of delafossite crystal structure.

  6. Carrier Selective, Passivated Contacts for High Efficiency Silicon Solar Cells based on Transparent Conducting Oxides

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Young, David L.; Nemeth, William; Grover, Sachit; Norman, Andrew; Yuan, Hao-Chih; Lee, Benjamin G.; LaSalvia, Vincenzo; Stradins, Paul

    2014-01-01

    We describe the design, fabrication and results of passivated contacts to n-type silicon utilizing thin SiO2 and transparent conducting oxide layers. High temperature silicon dioxide is grown on both surfaces of an n-type wafer to a thickness <50 Å, followed by deposition of tin-doped indium oxide (ITO) and a patterned metal contacting layer. As deposited, the thin-film stack has a very high J0,contact, and a non-ohmic, high contact resistance. However, after a forming gas anneal, the passivation quality and the contact resistivity improve significantly. The contacts are characterized by measuring the recombination parameter of the contact (J0,contact) and the specificmore » contact resistivity (ρcontact) using a TLM pattern. The best ITO/SiO2 passivated contact in this study has J0,contact = 92.5 fA/cm2 and ρcontact = 11.5 mOhm-cm2. These values are placed in context with other passivating contacts using an analysis that determines the ultimate efficiency and the optimal area fraction for contacts for a given set of (J0,contact, ρcontact) values. The ITO/SiO2 contacts are found to have a higher J0,contact, but a similar ρcontact compared to the best reported passivated contacts.« less

  7. Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting

    SciTech Connect (OSTI)

    Gary Silverman; Bluhm, Martin; Coffey, James; Korotkov, Roman; Polsz, Craig; Salemi, Alexandre; Smith, Robert; Smith, Ryan; Stricker, Jeff; Xu,Chen; Shirazi, Jasmine; Papakonstantopulous, George; Carson, Steve Philips Lighting GmbH Goldman, Claudia; Hartmann, Sren; Jessen, Frank; Krogmann, Bianca; Rickers, Christoph; Ruske, Manfred, Schwab, Holger; Bertram, Dietrich

    2011-01-02

    Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exaserbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectonic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availablility of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a

  8. Transparent Conductive Nanostructures

    SciTech Connect (OSTI)

    2008-06-22

    The objectives of this program between UT-Battelle, LLC (the ''Contractor'') and (Battelle Memorial Institute) (the "Participant") were directed towards achieving significant improvement: in the electrical conductivity and optical/infrared transmission of single-wall carbon nanotube (SWNT)-based composite materials. These materials will be used in coating applications that range from aircraft canopies to display applications. The goal of the project was to obtain supported mats of SWNTs with sheet conductivities approaching 10 ohms/square combined with high optical transmission (>85% transmission at 550 nm), thereby permitting their application as a replacement for indium tin oxide (ITO) in a variety of applications such as flexible displays.

  9. Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting

    SciTech Connect (OSTI)

    Martin Bluhm; James Coffey; Roman Korotkov; Craig Polsz; Alexandre Salemi; Robert Smith; Ryan Smith; Jeff Stricker; Chen Xu; Jasmine Shirazi; George Papakonstantopulous; Steve Carson; Claudia Goldman; Soren Hartmann; Frank Jessen; Bianca Krogmann; Christoph Rickers; Manfred Ruske; Holger Schwab; Dietrich Bertram

    2011-01-02

    Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exacerbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectronic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availability of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a

  10. Plasmonic transparent conducting metal oxide nanoparticles and films for optical sensing applications

    DOE Patents [OSTI]

    Ohodnicki, Jr., Paul R; Wang, Congjun; Andio, Mark A

    2014-01-28

    The disclosure relates to a method of detecting a change in a chemical composition by contacting a doped oxide material with a monitored stream, illuminating the doped oxide material with incident light, collecting exiting light, monitoring an optical signal based on a comparison of the incident light and the exiting light, and detecting a shift in the optical signal. The doped metal oxide has a carrier concentration of at least 10.sup.18/cm.sup.3, a bandgap of at least 2 eV, and an electronic conductivity of at least 10.sup.1 S/cm, where parameters are specified at a temperature of 25.degree. C. The optical response of the doped oxide materials results from the high carrier concentration of the doped metal oxide, and the resulting impact of changing gas atmospheres on that relatively high carrier concentration. These changes in effective carrier densities of conducting metal oxide nanoparticles are postulated to be responsible for the change in measured optical absorption associated with free carriers. Exemplary doped metal oxides include but are not limited to Al-doped ZnO, Sn-doped In.sub.2O.sub.3, Nb-doped TiO.sub.2, and F-doped SnO.sub.2.

  11. Optical and electronic properties of delafossite CuBO{sub 2}p-type transparent conducting oxide

    SciTech Connect (OSTI)

    Ruttanapun, Chesta E-mail: krchesta@kmitl.ac.th

    2013-09-21

    CuBO{sub 2} delafossite was prepared by solid state reaction and calcined/sintered at 1005?C. The optical properties of this p-type transparent conducting oxide were investigated. Its crystal structure, morphology, composition, oxygen decomposition, and optical and electronic properties were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, thermal gravimetric analysis (TGA), ultraviolet-visible-near-infrared (UV-VIS-NIR) and fluorescence spectroscopies, Seebeck coefficient, and electrical conductivity measurements. CuBO{sub 2} delafossite possesses a hexagonal space group R3{sup }m. TGA indicated a weight loss of 10%, which was attributed to excess oxygen. The positive Seebeck coefficient confirmed p-type behavior. Emission at 355?nm indicated a direct band type transition, and the UV-VIS-NIR spectrum indicated an optical direct gap of 3.6?eV. Activation energies for carrier production and electrical conduction were 0.147 and 0.58?eV, respectively, indicating the thermal activation of carriers. CuBO{sub 2} delafossite is a p-type transparent conducting oxide with a wide band gap and may have potential in industrial p-type electrodes.

  12. High quality ZnO:Al transparent conducting oxide films synthesized by pulsed filtered cathodic arc deposition

    SciTech Connect (OSTI)

    Anders, Andre; Lim, Sunnie H.N.; Yu, Kin Man; Andersson, Joakim; Rosen, Johanna; McFarland, Mike; Brown, Jeff

    2009-04-24

    Aluminum-doped zinc oxide, ZnO:Al or AZO, is a well-known n-type transparent conducting oxide with great potential in a number of applications currently dominated by indium tin oxide (ITO). In this study, the optical and electrical properties of AZO thin films deposited on glass and silicon by pulsed filtered cathodic arc deposition are systematically studied. In contrast to magnetron sputtering, this technique does not produce energetic negative ions, and therefore ion damage can be minimized. The quality of the AZO films strongly depends on the growth temperature while only marginal improvements are obtained with post-deposition annealing. The best films, grown at a temperature of about 200?C, have resistivities in the low to mid 10-4 Omega cm range with a transmittance better than 85percent in the visible part of the spectrum. It is remarkable that relatively good films of small thickness (60 nm) can be fabricated using this method.

  13. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    SciTech Connect (OSTI)

    Zhu, Yuankun; Mendelsberg, Rueben J.; Zhu, Jiaqi; Han, Jiecai; Anders, Andr

    2012-11-26

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). In this study, it is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10-5 ?cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80% from 500-1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.

  14. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Yuankun; Mendelsberg, Rueben J.; Zhu, Jiaqi; Han, Jiecai; Anders, André

    2012-11-26

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). In this study, it is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10-5 Ωcm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80% from 500-1250 nmmore » (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.« less

  15. Colloidal infrared reflective and transparent conductive aluminum-doped zinc oxide nanocrystals

    DOE Patents [OSTI]

    Buonsanti, Raffaella; Milliron, Delia J

    2015-02-24

    The present invention provides a method of preparing aluminum-doped zinc oxide (AZO) nanocrystals. In an exemplary embodiment, the method includes (1) injecting a precursor mixture of a zinc precursor, an aluminum precursor, an amine, and a fatty acid in a solution of a vicinal diol in a non-coordinating solvent, thereby resulting in a reaction mixture, (2) precipitating the nanocrystals from the reaction mixture, thereby resulting in a final precipitate, and (3) dissolving the final precipitate in an apolar solvent. The present invention also provides a dispersion. In an exemplary embodiment, the dispersion includes (1) nanocrystals that are well separated from each other, where the nanocrystals are coated with surfactants and (2) an apolar solvent where the nanocrystals are suspended in the apolar solvent. The present invention also provides a film. In an exemplary embodiment, the film includes (1) a substrate and (2) nanocrystals that are evenly distributed on the substrate.

  16. Highly transparent conductive electrode with ultra-low HAZE by grain boundary modification of aqueous solution fabricated alumina-doped zinc oxide nanocrystals

    SciTech Connect (OSTI)

    Nian, Qiong; Cheng, Gary J.; Callahan, Michael; Bailey, John; Look, David; Efstathiadis, Harry

    2015-06-01

    Commercial production of transparent conducting oxide (TCO) polycrystalline films requires high electrical conductivity with minimal degradation in optical transparency. Aqueous solution deposited TCO films would reduce production costs of TCO films but suffer from low electrical mobility, which severely degrades both electrical conductivity and optical transparency in the visible spectrum. Here, we demonstrated that grain boundary modification by ultra-violet laser crystallization (UVLC) of solution deposited aluminium-doped zinc oxide (AZO) nanocrystals results in high Hall mobility, with a corresponding dramatic improvement in AZO electrical conductance. The AZO films after laser irradiation exhibit electrical mobility up to 18.1 cm{sup 2} V{sup −1} s{sup −1} with corresponding electrical resistivity and sheet resistances as low as 1 × 10{sup −3} Ω cm and 75 Ω/sq, respectively. The high mobility also enabled a high transmittance (T) of 88%-96% at 550 nm for the UVLC films. In addition, HAZE measurement shows AZO film scattering transmittance as low as 1.8%, which is superior over most other solution deposited transparent electrode alternatives such as silver nanowires. Thus, AZO films produced by the UVLC technique have a combined figure of merit for electrical conductivity, optical transparency, and optical HAZE higher than other solution based deposition techniques and comparable to vacuumed based deposition methods.

  17. Why MnIn{sub 2}O{sub 4} spinel is not a transparent conducting oxide?

    SciTech Connect (OSTI)

    Martinez-Lope, M.J.; Retuerto, M.; Calle, C. de la; Porcher, Florence

    2012-03-15

    The title compound has been synthesized by a citrate technique. The crystal structure has been investigated at room temperature from high-resolution neutron powder diffraction (NPD) data. It crystallizes in a cubic spinel structure, space group Fd3-bar m, Z=8, with a=9.0008(1) A at 295 K. It exhibits a crystallographic formula (Mn{sub 0.924(2)}In{sub 0.076(2)}){sub 8a}(In{sub 1.804(2)}Mn{sub 0.196(2)}){sub 16d}O{sub 4}, where 8a and 16d stand for the tetrahedral and octahedral sites of the spinel structure, respectively, with a slight degree of inversion, {lambda}=0.08. MnIn{sub 2}O{sub 4} shows antiferromagnetic interactions below T{sub N} Almost-Equal-To 40 K, due to the statistical distribution of Mn ions over the two available sites. Unlike the related MgIn{sub 2}O{sub 4} and CdIn{sub 2}O{sub 4} spinels, well known as transparent conducting oxides, MnIn{sub 2}O{sub 4} is not transparent and shows a poor conductivity ({sigma}=0.38 S cm{sup -1} at 1123 K): the presence of Mn ions, able to adopt mixed valence states, localizes the charges that, otherwise, would be delocalized in the spinel conduction band. - Graphical Abstract: From NPD data the crystallographic formula (Mn{sub 0.924(2)}In{sub 0.076(2)}){sub 8a}(In{sub 1.804(2)}Mn{sub 0.196(2)}){sub 16d}O{sub 4}, shows a slight degree of inversion, {lambda}=0.08 and a certain In deficiency. The presence of Mn ions, able to adopt mixed oxidation states, localize the charges that, otherwise, would be delocalized in the spinel conduction band; the presence of localized Mn{sup 2+} and Mn{sup 3+} ions provides the characteristic brown color. Highlights: Black-Right-Pointing-Pointer Accurate structural determination from NPD data: inversion degree (8%), and In deficiency. Black-Right-Pointing-Pointer Bond-valence indicates Mn{sup 2+}-Mn{sup 3+} ions; edge-sharing octahedra contain 90% In{sup 3+}+10% Mn{sup 3+} cations. Black-Right-Pointing-Pointer Conductivity several orders of magnitude lower than those of MgIn{sub 2}O

  18. Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes

    SciTech Connect (OSTI)

    Yang Yu; Wang Lian; Yan He; Jin Shu; Marks, Tobin J.; Li Shuyou

    2006-07-31

    Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In{sub 2}O{sub 3} (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at. %. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 {omega}/{open_square}, and the average optical transmittance is 87.1% in the 400-700 nm region. The overall figure of merit ({phi}=T{sup 10}/R{sub sheet}) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices.

  19. Transparent Conductive Nano-Composites - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Photovoltaic Solar Photovoltaic Electricity Transmission Electricity Transmission Advanced Materials Advanced Materials Find More Like This Return to Search Transparent Conductive Nano-Composites Nanomaterials for Applications Ranging From Photovoltaic Cells to Display Technologies Oak Ridge National Laboratory Contact ORNL About This Technology Technology Marketing Summary Indium Tin Oxide, the most widely used commercial transparent conducting coating, has severe limitations such

  20. Transparent conducting impurity-doped ZnO thin films prepared using oxide targets sintered by millimeter-wave heating

    SciTech Connect (OSTI)

    Minami, Tadatsugu; Okada, Kenji; Miyata, Toshihiro; Nomoto, Juni-chi; Hara, Youhei; Abe, Hiroshi

    2009-07-15

    The preparation of transparent conducting impurity-doped ZnO thin films by both pulsed laser deposition (PLD) and magnetron sputtering deposition (MSD) using impurity-doped ZnO targets sintered with a newly developed energy saving millimeter-wave (28 GHz) heating technique is described. Al-doped ZnO (AZO) and V-co-doped AZO (AZO:V) targets were prepared by sintering with various impurity contents for 30 min at a temperature of approximately 1250 degree sign C in an air or Ar gas atmosphere using the millimeter-wave heating technique. The resulting resistivity and its thickness dependence obtainable in thin films prepared by PLD using millimeter-wave-sintered AZO targets were comparable to those obtained in thin films prepared by PLD using conventional furnace-sintered AZO targets; a low resistivity on the order of 3x10{sup -4} {Omega} cm was obtained in AZO thin films prepared with an Al content [Al/(Al+Zn) atomic ratio] of 3.2 at. % and a thickness of 100 nm. In addition, the resulting resistivity and its spatial distribution on the substrate surface obtainable in thin films prepared by rf-MSD using a millimeter-wave-sintered AZO target were almost the same as those obtained in thin films prepared by rf-MSD using a conventional powder AZO target. Thin films prepared by PLD using millimeter-wave-sintered AZO:V targets exhibited an improved resistivity stability in a high humidity environment. Thin films deposited with a thickness of approximately 100 nm using an AZO:V target codoped with an Al content of 4 at. % and a V content [V/(V+Zn) atomic ratio] of 0.2 at. % were sufficiently stable when long-term tested in air at 90% relative humidity and 60 degree sign C.

  1. Effects of pulsed sputtering frequency on the uniformity of Al:ZnO's transparent conductive oxide properties for solar cell applications

    SciTech Connect (OSTI)

    Yang, Wonkyun; Joo, Junghoon

    2009-11-15

    Bipolar pulsed magnetron sputtering is used to deposit Al doped ZnO (AZO) on a glass substrate for a transparent conducting oxide in a solar cell structure. A 5x25 in.{sup 2} AZO target was sputtered by 50-250 kHz bipolar pulsed dc power supply to deposit a 400x400 mm{sup 2} area by swinging back and forth. Sheet resistance, surface morphology, and optical transmittance were measured at different positions on 16 witness samples (small glass slides) to evaluate uniformity. In the thickness of 800 nm, the average value of sheet resistance was 30 {Omega}/{open_square} and the average resistivity was 2.1x10{sup -3} {Omega} cm. Transmittance was 50%-80% over the visible range. The nonuniformities of thickness, transmittance, and resistivity in the 400x400 mm{sup 2} area were 5.8%, 0.8%, and within 9.5%, respectively.

  2. Transparent electrical conducting films by activated reactive evaporation

    DOE Patents [OSTI]

    Bunshah, Rointan; Nath, Prem

    1982-01-01

    Process and apparatus for producing transparent electrical conducting thin films by activated reactive evaporation. Thin films of low melting point metals and alloys, such as indium oxide and indium oxide doped with tin, are produced by physical vapor deposition. The metal or alloy is vaporized by electrical resistance heating in a vacuum chamber, oxygen and an inert gas such as argon are introduced into the chamber, and vapor and gas are ionized by a beam of low energy electrons in a reaction zone between the resistance heater and the substrate. There is a reaction between the ionized oxygen and the metal vapor resulting in the metal oxide which deposits on the substrate as a thin film which is ready for use without requiring post deposition heat treatment.

  3. Lutetium oxide-based transparent ceramic scintillators

    DOE Patents [OSTI]

    Seeley, Zachary; Cherepy, Nerine; Kuntz, Joshua; Payne, Stephen A.

    2016-01-19

    In one embodiment, a transparent ceramic of sintered nanoparticles includes gadolinium lutetium oxide doped with europium having a chemical composition (Lu.sub.1-xGd.sub.x).sub.2-YEu.sub.YO.sub.3, where X is any value within a range from about 0.05 to about 0.45 and Y is any value within a range from about 0.01 to about 0.2, and where the transparent ceramic exhibits a transparency characterized by a scatter coefficient of less than about 10%/cm. In another embodiment, a transparent ceramic scintillator of sintered nanoparticles, includes a body of sintered nanoparticles including gadolinium lutetium oxide doped with a rare earth activator (RE) having a chemical composition (Lu.sub.1-xGd.sub.x).sub.2-YRE.sub.YO.sub.3, where RE is selected from the group consisting of: Sm, Eu, Tb, and Dy, where the transparent ceramic exhibits a transparency characterized by a scatter coefficient of less than about 10%/cm.

  4. Thin Film Electronic Devices with Conductive and Transparent Gas and

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Moisture Permeation Barriers - Energy Innovation Portal Solar Photovoltaic Solar Photovoltaic Electricity Transmission Electricity Transmission Advanced Materials Advanced Materials Find More Like This Return to Search Thin Film Electronic Devices with Conductive and Transparent Gas and Moisture Permeation Barriers National Renewable Energy Laboratory Contact NREL About This Technology Technology Marketing Summary Transparent conducting (TC) materials are extensively used in electronics and

  5. Thin transparent conducting films of cadmium stannate

    DOE Patents [OSTI]

    Wu, Xuanzhi; Coutts, Timothy J.

    2001-01-01

    A process for preparing thin Cd.sub.2 SnO.sub.4 films. The process comprises the steps of RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a first substrate; coating a second substrate with a CdS layer; contacting the Cd.sub.2 SnO.sub.4 layer with the CdS layer in a water- and oxygen-free environment and heating the first and second substrates and the Cd.sub.2 SnO.sub.4 and CdS layers to a temperature sufficient to induce crystallization of the Cd.sub.2 SnO.sub.4 layer into a uniform single-phase spinel-type structure, for a time sufficient to allow full crystallization of the Cd.sub.2 SnO.sub.4 layer at that temperature; cooling the first and second substrates to room temperature; and separating the first and second substrates and layers from each other. The process can be conducted at temperatures less than 600.degree. C., allowing the use of inexpensive soda lime glass substrates.

  6. Tuning optical properties of transparent conducting barium stannate by dimensional reduction

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Yuwei; Zhang, Lijun; Ma, Yanming; Singh, David J.

    2015-01-30

    We report calculations of the electronic structure and optical properties of doped n-type perovskite BaSnO3 and layered perovskites. While doped BaSnO3 retains its transparency for energies below the valence to conduction band onset, the doped layered compounds exhibit below band edge optical conductivity due to transitions from the lowest conduction band. This gives absorption in the visible for Ba2SnO4. It is important to minimize this phase in transparent conducting oxide (TCO) films. Ba3Sn2O7 and Ba4Sn3O10 have strong transitions only in the red and infrared, respectively. Thus, there may be opportunities for using these as wavelength filtering TCO.

  7. ZnO:H indium-free transparent conductive electrodes for active-matrix display applications

    SciTech Connect (OSTI)

    Chen, Shuming Wang, Sisi

    2014-12-01

    Transparent conductive electrodes based on hydrogen (H)-doped zinc oxide (ZnO) have been proposed for active-matrix (AM) display applications. When fabricated with optimal H plasma power and optimal plasma treatment time, the resulting ZnO:H films exhibit low sheet resistance of 200 Ω/◻ and high average transmission of 85% at a film thickness of 150 nm. The demonstrated transparent conductive ZnO:H films can potentially replace indium-tin-oxide and serve as pixel electrodes for organic light-emitting diodes as well as source/drain electrodes for ZnO-based thin-film transistors. Use of the proposed ZnO:H electrodes means that two photomask stages can be removed from the fabrication process flow for ZnO-based AM backplanes.

  8. Single-walled carbon nanotube transparent conductive films fabricated by reductive dissolution and spray coating for organic photovoltaics

    SciTech Connect (OSTI)

    Ostfeld, Aminy E.; Arias, Ana Claudia; Catheline, Amlie; Ligsay, Kathleen; Kim, Kee-Chan; Fogden, Sin; Chen, Zhihua; Facchetti, Antonio

    2014-12-22

    Solutions of unbundled and unbroken single-walled carbon nanotubes have been prepared using a reductive dissolution process. Transparent conductive films spray-coated from these solutions show a nearly twofold improvement in the ratio of electrical conductivity to optical absorptivity versus those deposited from conventional aqueous dispersions, due to substantial de-aggregation and sizable nanotube lengths. These transparent electrodes have been utilized to fabricate P3HT-PCBM organic solar cells achieving power conversion efficiencies up to 2.3%, comparable to those of solar cells using indium tin oxide transparent electrodes.

  9. Low resistivity p-type Zn{sub 1−x}Al{sub x}O:Cu{sub 2}O composite transparent conducting oxide thin film fabricated by sol–gel method

    SciTech Connect (OSTI)

    Hui, K.N.; Hui, K.S.; Li, Lei; Cho, Y.R.; Singh, Jai

    2013-01-15

    Graphical abstract: Display Omitted Highlights: ► Cu{sub 2}O doped p-type AZO films was first prepared by sol–gel method. ► AZO:Cu{sub 2}O films showed a polycrystalline Cu{sub 2}O (1 1 0) and Cu (2 0 0) phases. ► p-Type conductivity was achieved by annealing in N{sub 2}/H{sub 2} forming gas at 400 °C. ► p–n junction (ITO/AZO:Cu{sub 2}O) revealed rectifying I–V characteristics. ► The mean optical transmittance of AZO:Cu{sub 2}Ofilms was >90%. -- Abstract: Highly transparent Cu{sub 2}O-doped p-type Zn{sub 1−x}Al{sub x}O (AZO; Al/Zn = 1.5 at%) conducting oxide films were synthesized on glass substrates using a cost effective low temperature sol–gel method. X-ray diffraction of the Cu{sub 2}O-doped AZO (AZO:Cu{sub 2}O) films revealed a polycrystalline Cu{sub 2}O (1 1 0) peak. The I–V measurements of the p–n junction (ITO/AZO:Cu{sub 2}O) revealed rectifying I–V characteristics, showing that these AZO:Cu{sub 2}O films exhibit p-type conductivity. p-Type conductivity was achieved by annealing the AZO:Cu{sub 2}O films in N{sub 2}/H{sub 2} forming gas at 400 °C. The hole concentration, hole mobility and resistivity of the 0.5–2 mol% AZO:Cu{sub 2}O films were 5.41 × 10{sup 18} to 1.99 × 10{sup 20} cm{sup −3}, 8.36–21.6 cm{sup 2}/V s and 1.66 × 10{sup −2} to 6.94 × 10{sup −3} Ω cm, respectively. These results show that post-annealing in a forming gas is effective and practicable in producing p-type AZO.

  10. Characterization of transparent zinc oxide films prepared by electrochemical reaction

    SciTech Connect (OSTI)

    Izaki, Masanobu; Omi, Takashi

    1997-06-01

    Transparent zinc oxide (ZnO) films have been grown by galvanostatic cathodic deposition onto conductive glasses from a simple aqueous zinc nitrate electrolyte maintained at 335 K. The as-deposited ZnO films were characterized with Fourier transform infrared absorption spectroscopy, x-ray diffraction, scanning electron microscopy, optical transmission and absorption studies, and measurement of sheet resistivity as a function of cathodic current density. The ZnO films prepared had a wurtzite structure and exhibited an optical bandgap energy of 3.3 eV which is characteristic of ZnO. At a low cathodic current density of 0.05 mA/cm{sup 2}, ZnO films with excellent electrical characteristics have been obtained. A 2 {micro}m thick ZnO film with an optical transmittance of 72% was deposited by electrolysis for approximately 20 min at a cathodic current density of 10 mA/cm{sup 2}.

  11. Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

    DOE Patents [OSTI]

    Simpson, Lin Jay

    2015-07-28

    Thin film electronic devices (or stacks integrated with a substrate) that include a permeation barrier formed of a thin layer of metal that provides a light transmitting and electrically conductive layer, wherein the electrical conductive layer is formed on a surface of the substrate or device layer such as a transparent conducting material layer with pin holes or defects caused by manufacturing and the thin layer of metal is deposited on the conductive layer and formed from a self-healing metal that forms self-terminating oxides. A permeation plug or block is formed in or adjacent to the thin film of metal at or proximate to the pin holes to block further permeation of contaminants through the pin holes.

  12. Deposition and post-processing techniques for transparent conductive films

    DOE Patents [OSTI]

    Christoforo, Mark Greyson; Mehra, Saahil; Salleo, Alberto; Peumans, Peter

    2015-01-13

    In one embodiment, a method is provided for fabrication of a semitransparent conductive mesh. A first solution having conductive nanowires suspended therein and a second solution having nanoparticles suspended therein are sprayed toward a substrate, the spraying forming a mist. The mist is processed, while on the substrate, to provide a semitransparent conductive material in the form of a mesh having the conductive nanowires and nanoparticles. The nanoparticles are configured and arranged to direct light passing through the mesh. Connections between the nanowires provide conductivity through the mesh.

  13. High performance transparent conducting films of cadmium indate prepared by RF sputtering

    SciTech Connect (OSTI)

    Coutts, T.J.; Wu, X.; Mulligan, W.P.

    1996-04-01

    The authors are examining various spinel-structured thin films (e.g., Cd{sub 2}SnO{sub 4}, Zn{sub 2}SnO{sub 4}) to develop higher-quality transparent conducting oxides (TCO) than more conventional materials such as indium tin oxide. Here, the authors report on cadmium indate (CdIn{sub 2}O{sub 4}, CIO), which is another member of this family. Thin films of CIO were deposited by radio-frequency (RF) magnetron sputtering, from an oxide target, onto borosilicate glass substrates. The variables included the substrate temperature, sputtering gas composition, and pressure. Film properties were measured before and after heat treatment. Characterization involved Hall effect measurements, optical and infrared spectrophotometry, X-ray diffraction, and atomic-force microscopy. Film resistivities as low as 2.3 {times} 10{sup {minus}4} {Omega} cm were achieved for a film thickness of 0.55 {micro}m. The transmittance was 90% in the visible region of the spectrum, without correction for substrate losses and without an anti-reflection coating. The plasma resonance occurred at longer wavelengths than for other materials and this, with a bandgap of approximately 3.1 eV, presents a wide window for optical transmittance. The highest mobility was 54 cm{sup 2} V{sup {minus}1} s{sup {minus}1} and the highest carrier concentration was 7.5 {times} 10{sup 20} cm{sup {minus}3}.

  14. High performance transparent conducting films of cadmium indate prepared by RF sputtering

    SciTech Connect (OSTI)

    Coutts, T.J.; Wu, X.; Mulligan, W.P.

    1996-12-31

    The authors are examining various spinel-structured thin films (e.g., Cd{sub 2}SnO{sub 4}, Zn{sub 2}SnO{sub 4}) to develop higher-quality transparent conducting oxides (TCO) than more conventional materials such as indium tin oxide. Here, they report on cadmium indate (CdIn{sub 2}O{sub 4}, CIO), which is another member of this family. Thin films of CIO were deposited by radio-frequency (RF) magnetron sputtering, from an oxide target, onto borosilicate glass substrates. The variables included the substrate temperature, sputtering gas composition, and pressure. Film properties were measured before and after heat treatment. Characterization involved Hall effect measurements, optical and infrared spectrophotometry, X-ray diffraction, and atomic-force microscopy. Film resistivities as low as 2.3 {times} 10{sup {minus}4} {Omega}cm were achieved for a film thickness of 0.55 {micro}m. The transmittance was 90% in the visible region of the spectrum, without correction for substrate losses and without an anti-reflection coating. The plasma resonance occurred at longer wavelengths than for other materials and this, with a bandgap of approximately 3.1 eV, presents a wide window for optical transmittance. The highest mobility was 54 cm{sup 2} V{sup {minus}1} s{sup {minus}1} and the highest carrier concentration was 7.5 {times} 10{sup 20} cm{sup {minus}3}.

  15. Graphene oxide overprints for flexible and transparent electronics

    SciTech Connect (OSTI)

    Rogala, M. Wlasny, I.; Kowalczyk, P. J.; Busiakiewicz, A.; Kozlowski, W.; Klusek, Z.; Sieradzki, Z.; Krucinska, I.; Puchalski, M.; Skrzetuska, E.

    2015-01-26

    The overprints produced in inkjet technology with graphene oxide dispersion are presented. The graphene oxide ink is developed to be fully compatible with standard industrial printers and polyester substrates. Post-printing chemical reduction procedure is proposed, which leads to the restoration of electrical conductivity without destroying the substrate. The presented results show the outstanding potential of graphene oxide for rapid and cost efficient commercial implementation to production of flexible electronics. Properties of graphene-based electrodes are characterized on the macro- and nano-scale. The observed nano-scale inhomogeneity of overprints' conductivity is found to be essential in the field of future industrial applications.

  16. Infrared-optical spectroscopy of transparent conducting perovskite (La,Ba)SnO{sub 3} thin films

    SciTech Connect (OSTI)

    Seo, Dongmin; Yu, Kwangnam; Jun Chang, Young; Choi, E. J.; Sohn, Egon; Hoon Kim, Kee

    2014-01-13

    We have performed optical transmission, reflection, spectroscopic ellipsometry, and Hall effect measurements on the electron-doped La{sub x}Ba{sub 1x}SnO{sub 3} (x?=?0.04) transparent thin films. From the infrared Drude response and plasma frequency analysis we determine the effective mass of the conducting electron m*?=?0.35m{sub 0}. In the visible-UV region the optical band gap shifts to high energy in (La,Ba)SnO{sub 3} by 0.18?eV compared with undoped BaSnO{sub 3} which, in the context of the Burstein-Moss analysis, is consistent with the infrared-m*. m* of BaSnO{sub 3} is compared with other existing transparent conducting oxides (TCO), and implication on search for high-mobility TCO compounds is discussed.

  17. Growth of oriented vanadium pentaoxide nanostructures on transparent conducting substrates and their applications in photocatalysis

    SciTech Connect (OSTI)

    Liu, Hongjiang; Gao, Yanfeng; Zhou, Jiadong; Liu, Xinling; Chen, Zhang; Cao, Chuanxiang; Luo, Hongjie; Kanehira, Minoru

    2014-06-01

    A novel, hydrothermal and hard-template-free method was developed for the first time to grow oriented, single-crystalline monoclinic VO{sub 2} (B) flower-like nanorod films on transparent conductive fluorine-doped tin oxide (FTO) substrates. The length and morphology of the nanorods can be tuned by changing the growth parameters, such as growth time and initial precursor concentration. The flower-like V{sub 2}O{sub 5} films were obtained after post-calcination treatment of VO{sub 2} (B) films. The photocatalytic activity of V{sub 2}O{sub 5} films was investigated by the degradation of methylene blue (MB) under UV and visible light. The prepared V{sub 2}O{sub 5} film exhibited good photocatalytic performance (74.6% and 63% under UV and visible light for 210 min, respectively) and more practical application in industry. - Graphical abstract: Flower nanostructured vanadium oxide film was prepared by hydrothermal reaction for photocatalysis application. - Highlights: Monoclinic VO{sub 2} nanorod array and flower-like nanostructure were directly grown on FTO substrate by hydrothermal reaction. The growth mechanism was analyzed by FESEM at different time. V{sub 2}O{sub 5} flower-like nanostructure film was obtained after calcining VO{sub 2} film. V{sub 2}O{sub 5} film exhibited good light activity and potential application in photocatalysis.

  18. Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency

    SciTech Connect (OSTI)

    Nian, Qiong; Zhang, Martin Y.; Schwartz, Bradley D.; Cheng, Gary J.

    2014-05-19

    One of the most challenging issues in transparent conductive oxides (TCOs) is to improve their conductivity without compromising transparency. High conductivity in TCO films often comes from a high carrier concentration, which is detrimental to transparency due to free carrier absorption. Here we show that UV laser crystallization (UVLC) of aluminum-doped ZnO (AZO) films prepared by pulsed laser deposition on sapphire results in much higher Hall mobility, allowing relaxation of the constraints of the conductivity/transparency trade-off. X-ray diffraction patterns and morphological characterizations show grain growth and crystallinity enhancement during UVLC, resulting in less film internal imperfections. Optoelectronic measurements show that UVLC dramatically improves the electron mobility, while the carrier concentration decreases which in turn simultaneously increases conductivity and transparency. AZO films under optimized UVLC achieve the highest electron mobility of 79 cm{sup 2}/V s at a low carrier concentration of 7.9 × 10{sup +19} cm{sup −3}. This is realized by a laser crystallization induced decrease of both grain boundary density and electron trap density at grain boundaries. The infrared (IR) to mid-IR range transmittance spectrum shows UVLC significantly enhances the AZO film transparency without compromising conductivity.

  19. Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

    DOE Patents [OSTI]

    Simpson, Lin Jay

    2013-12-17

    A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).

  20. 15.07.10 RH P-type Transparent - JCAP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for Efficient and Stable Solar Water Oxidation Chen, L. et al. p -Type Transparent Conducting Oxide n-Type Semiconductor Heterojunctions for Efficient and Stable ...

  1. p-Type transparent conducting oxides and methods for preparation

    DOE Patents [OSTI]

    Shahriari, Dean Y.; Barnabe, Antoine; Mason, Thomas O.; Poeppelmeier, Kenneth R.

    2005-12-27

    A facile, low temperature and low pressure method for the preparation of a wide range of phase pure ABO.sub.2 compositions.

  2. p-Type transparent conducting oxides and methods for preparation

    DOE Patents [OSTI]

    Shahriari, Dean Y.; Barnabe, Antoine; Mason, Thomas O.; Poeppelmeier, Kenneth R.

    2011-05-31

    A facile, low temperature and low pressure method for the preparation of a wide range of phase pure ABO.sub.2 compositions.

  3. p-Type transparent conducting oxides and methods for preparation...

    Office of Scientific and Technical Information (OSTI)

    Inventors: Shahriari, Dean Y. 1 ; Barnabe, Antoine 2 ; Mason, Thomas O. 1 ; Poeppelmeier, Kenneth R. 1 + Show Author Affiliations (Evanston, IL) (Toulouse, FR) Issue Date: ...

  4. 15.07.10 RH P-type Transparent - JCAP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    p -Type Transparent Conducting Oxide/n-Type Semiconductor Heterojunctions for Efficient and Stable Solar Water Oxidation Chen, L. et al. p -Type Transparent Conducting Oxide / n-Type Semiconductor Heterojunctions for Efficient and Stable Solar Water Oxidation. Journal of the American Chemical Society, 2015, DOI: 10.1021/ jacs . 5b03536 (2015). Scientific Achievement Efficient charge conduction from the light absorber to the water oxidation catalyst was realized with a transparent,

  5. Structural stability of transparent conducting films assembled from length purified single-wall carbon nanotubes

    SciTech Connect (OSTI)

    J. M. Harris; G. R. S. Iyer; D. O. Simien; J. A. Fagan; J. Y. Huh; J. Y. Chung; S. D. Hudson; J. Obrzut; J. F. Douglas; C. M. Stafford; E. K. Hobbie

    2011-01-01

    Single-wall carbon nanotube (SWCNT) films show significant promise for transparent electronics applications that demand mechanical flexibility, but durability remains an outstanding issue. In this work, thin membranes of length purified single-wall carbon nanotubes (SWCNTs) are uniaxially and isotropically compressed by depositing them on prestrained polymer substrates. Upon release of the strain, the topography, microstructure, and conductivity of the films are characterized using a combination of optical/fluorescence microscopy, light scattering, force microscopy, electron microscopy, and impedance spectroscopy. Above a critical surface mass density, films assembled from nanotubes of well-defined length exhibit a strongly nonlinear mechanical response. The measured strain dependence reveals a dramatic softening that occurs through an alignment of the SWCNTs normal to the direction of prestrain, which at small strains is also apparent as an anisotropic increase in sheet resistance along the same direction. At higher strains, the membrane conductivities increase due to a compression-induced restoration of conductive pathways. Our measurements reveal the fundamental mode of elasto-plastic deformation in these films and suggest how it might be suppressed.

  6. Enhanced ionic conductivity in oxide heterostructures

    SciTech Connect (OSTI)

    Garcia-Barriocanal, Javier; Rivera-Calzada, Alberto; Varela del Arco, Maria; Sefrioui, Z.; Iborra, Enrique; Leon, C.; Pennycook, Stephen J; Santamaria, J.

    2010-01-01

    Fuel cells are electrochemical devices used to generate energy out of hydrogen. In a fuel cell, two conducting electrodes are separated by an electrolyte that is permeable to ions (either hydrogen or oxygen, depending on the fuel-cell category) but not to electrons. An electrode catalytic process yields the ionic species, which are transported through the electrolyte, while electrons blocked by the electrolyte pass through the external circuit. Polymeric membrane (PEMFC) or phosphoric acid fuel cells (PAFC) operating at low temperatures are the preferred option for transportation because of their quite large efficiencies (50%), compared with gasoline combustion engines (25%). Other uses are also being considered, such as battery replacements for personal electronics and stationary or portable emergency power. Solid-oxide fuel cells (SOFCs), operating at high temperatures, are a better option for stationary power generation because of their scalability. Here O{sup 2-} ions are the mobile species that travel at elevated temperatures (800-1000 C) through a solid electrolyte material to react with H{sup +} ions in the anode to produce water (Fig. 1). The high operating temperatures of solid oxide fuel cells are a major impediment to their widespread use in power generation. Thus, reducing this operating temperature is currently a major materials research goal, involving the search for novel electrolytes as well as active catalysts for electrode kinetics (oxygen reduction and hydrogen oxidation). Among oxide-ion conductors, those of anion-deficient fluorite structures such as yttria-stabilized zirconia (YSZ), xY{sub 2}O{sub 3}:(1-x) ZrO{sub 2}, are extensively used as electrolytes in SOFCs. Doping with Y{sub 2}O{sub 3} is known to stabilize the cubic fluorite structure of ZrO{sub 2} and to supply the oxygen vacancies responsible for the ionic conduction. These materials are characterized by a large number of mobile oxygen vacancies, which are randomly distributed in the

  7. U.S. transparency monitoring of HEU oxide conversion and blending to LEU hexafluoride at three Russian blending plants

    SciTech Connect (OSTI)

    Leich, D., LLNL

    1998-07-27

    The down-blending of Russian highly enriched uranium (HEU) takes place at three Russian gaseous centrifuge enrichment plants. The fluorination of HEU oxide and down-blending of HEU hexafluoride began in 1994, and shipments of low enriched uranium (LEU) hexafluoride product to the United States Enrichment Corporation (USEC) began in 1995 US transparency monitoring under the HEU Purchase Agreement began in 1996 and includes a permanent monitoring presence US transparency monitoring at these facilities is intended to provide confidence that HEU is received and down-blended to LEU for shipment to USEC The monitoring begins with observation of the receipt of HEU oxide shipments, including confirmation of enrichment using US nondestructive assay equipment The feeding of HEU oxide to the fluorination process and the withdrawal of HEU hexafluoride are monitored Monitoring is also conducted where the blending takes place and where shipping cylinders are filled with LEU product. A series of process and material accountancy documents are provided to US monitors.

  8. Preparation of transparent conducting B-doped ZnO films by vacuum arc plasma evaporation

    SciTech Connect (OSTI)

    Miyata, Toshihiro; Honma, Yasunori; Minami, Tadatsugu

    2007-07-15

    Highly transparent and conductive B-doped ZnO (BZO) thin films have been prepared by a newly developed vacuum arc plasma evaporation method that provided high-rate film depositions using sintered BZO pellets and fragments. The obtained electrical and optical properties of the deposited BZO thin films were considerably affected by the deposition conditions as well as the preparation method of the BZO pellets and fragments used. The lowest thin film resistivity was obtained with a B doping content [B/(B+Zn) atomic ratio] of approximately 1 at. %. A resistivity as low as 5x10{sup -4} {omega} cm and an average transmittance above about 80% in the wavelength range of 400-1300 nm were obtained in BZO films prepared with a thickness above approximately 400 nm at a substrate temperature of 200 deg. C. In addition, a low resistivity of 7.97x10{sup -4} {omega} cm and average transmittances above about 80% in the visible wavelength range were obtained in a BZO film prepared at a substrate temperature of 100 deg. C and an O{sub 2} gas flow rate of 10 SCCM (SCCM denotes cubic centimeter per minute at STP). The deposition rate of BZO films was typically 170 nm/min with a cathode plasma power of 4.5 kW.

  9. Zinc oxyfluoride transparent conductor

    DOE Patents [OSTI]

    Gordon, Roy G.

    1991-02-05

    Transparent, electrically conductive and infrared-reflective films of zinc oxyfluoride are produced by chemical vapor deposition from vapor mixtures of zinc, oxygen and fluorine-containing compounds. The substitution of fluorine for some of the oxygen in zinc oxide results in dramatic increases in the electrical conductivity. For example, diethyl zinc, ethyl alcohol and hexafluoropropene vapors are reacted over a glass surface at 400.degree. C. to form a visibly transparent, electrically conductive, infrared reflective and ultraviolet absorptive film of zinc oxyfluoride. Such films are useful in liquid crystal display devices, solar cells, electrochromic absorbers and reflectors, energy-conserving heat mirrors, and antistatic coatings.

  10. Investigation of fluorine-doped tin oxide based optically transparent E-shaped patch antenna for terahertz communications

    SciTech Connect (OSTI)

    Anand, S. E-mail: darak.mayur@gmail.com Darak, Mayur Sudesh E-mail: darak.mayur@gmail.com Kumar, D. Sriram E-mail: darak.mayur@gmail.com

    2014-10-15

    In this paper, a fluorine-doped tin oxide based optically transparent E-shaped patch antenna is designed and its radiation performance is analyzed in the 705 – 804 GHz band. As optically transparent antennas can be mounted on optical display, they facilitate the reduction of overall system size. The proposed antenna design is simulated using electromagnetic solver - Ansys HFSS and its characteristics such as impedance bandwidth, directivity, radiation efficiency and gain are observed. Results show that the fluorine-doped tin oxide based optically transparent patch antenna overcomes the conventional patch antenna limitations and thus the same can be used for solar cell antenna used in satellite systems.

  11. Conductive polymer/fullerene blend thin films with honeycomb framework for transparent photovoltaic application

    DOE Patents [OSTI]

    Cotlet, Mircea; Wang, Hsing-Lin; Tsai, Hsinhan; Xu, Zhihua

    2015-04-21

    Optoelectronic devices and thin-film semiconductor compositions and methods for making same are disclosed. The methods provide for the synthesis of the disclosed composition. The thin-film semiconductor compositions disclosed herein have a unique configuration that exhibits efficient photo-induced charge transfer and high transparency to visible light.

  12. NO.sub.x sensing devices having conductive oxide electrodes

    SciTech Connect (OSTI)

    Montgomery, Frederick C.; West, David L.; Armstrong, Timothy R.; Maxey, Lonnie C.

    2010-03-16

    A NO.sub.x sensing device includes at least one pair of spaced electrodes, at least one of which is made of a conductive oxide, and an oxygen-ion conducting material in bridging electrical communication with the electrodes.

  13. See-through amorphous silicon solar cells with selectively transparent and conducting photonic crystal back reflectors for building integrated photovoltaics

    SciTech Connect (OSTI)

    Yang, Yang; OBrien, Paul G.; Materials Chemistry Research Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6 ; Ozin, Geoffrey A. E-mail: kherani@ecf.utoronto.ca; Kherani, Nazir P. E-mail: kherani@ecf.utoronto.ca

    2013-11-25

    Thin semi-transparent hydrogenated amorphous silicon (a-Si:H) solar cells with selectively transparent and conducting photonic crystal (STCPC) back-reflectors are demonstrated. Short circuit current density of a 135?nm thick a-Si:H cell with a given STCPC back-reflector is enhanced by as much as 23% in comparison to a reference cell with an ITO film functioning as its rear contact. Concurrently, solar irradiance of 295?W/m{sup 2} and illuminance of 3480 lux are transmitted through the cell with a given STCPC back reflector under AM1.5 Global tilt illumination, indicating its utility as a source of space heating and lighting, respectively, in building integrated photovoltaic applications.

  14. 15.02.10 RH Transparent Catalytic - JCAP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transparent Catalytic Nickel Oxide Protecting Films for Photoanodes Sun, K. et al. Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films. PNAS 112 ( 12), 3612-3617, DOI: 10.1073/ pnas . 1423034112 (2015). Scientific Achievement Reactively sputtered NiOx layer provides a transparent, anti-reflective, conductive, chemically stable, inherently catalytic coating that stabilizes many efficient and technologically important

  15. Low temperature proton conducting oxide devices

    DOE Patents [OSTI]

    Armstrong, Timothy R.; Payzant, Edward A.; Speakman, Scott A.; Greenblatt, Martha

    2008-08-19

    A device for conducting protons at a temperature below 550.degree. C. includes a LAMOX ceramic body characterized by an alpha crystalline structure.

  16. A New Route to Nanoscale Conducting Channels in Insulating Oxides

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A New Route to Nanoscale Conducting Channels in Insulating Oxides Print Two-dimensional electron gases (2DEGs)-narrow conducting channels at the surfaces and interfaces of semiconductor materials-are the bedrock of conventional electronics. The startling 2004 discovery that such 2DEGs could be engineered at the interface between two insulating transition-metal oxides, SrTiO3 and LaAlO3, initiated a worldwide effort to harness the functionality of oxide materials for advanced electronic

  17. A New Route to Nanoscale Conducting Channels in Insulating Oxides

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New Route to Nanoscale Conducting Channels in Insulating Oxides Print Two-dimensional electron gases (2DEGs)-narrow conducting channels at the surfaces and interfaces of semiconductor materials-are the bedrock of conventional electronics. The startling 2004 discovery that such 2DEGs could be engineered at the interface between two insulating transition-metal oxides, SrTiO3 and LaAlO3, initiated a worldwide effort to harness the functionality of oxide materials for advanced electronic

  18. A New Route to Nanoscale Conducting Channels in Insulating Oxides

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A New Route to Nanoscale Conducting Channels in Insulating Oxides Print Two-dimensional electron gases (2DEGs)-narrow conducting channels at the surfaces and interfaces of semiconductor materials-are the bedrock of conventional electronics. The startling 2004 discovery that such 2DEGs could be engineered at the interface between two insulating transition-metal oxides, SrTiO3 and LaAlO3, initiated a worldwide effort to harness the functionality of oxide materials for advanced electronic

  19. A New Route to Nanoscale Conducting Channels in Insulating Oxides

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A New Route to Nanoscale Conducting Channels in Insulating Oxides Print Two-dimensional electron gases (2DEGs)-narrow conducting channels at the surfaces and interfaces of semiconductor materials-are the bedrock of conventional electronics. The startling 2004 discovery that such 2DEGs could be engineered at the interface between two insulating transition-metal oxides, SrTiO3 and LaAlO3, initiated a worldwide effort to harness the functionality of oxide materials for advanced electronic

  20. A New Route to Nanoscale Conducting Channels in Insulating Oxides

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A New Route to Nanoscale Conducting Channels in Insulating Oxides Print Two-dimensional electron gases (2DEGs)-narrow conducting channels at the surfaces and interfaces of semiconductor materials-are the bedrock of conventional electronics. The startling 2004 discovery that such 2DEGs could be engineered at the interface between two insulating transition-metal oxides, SrTiO3 and LaAlO3, initiated a worldwide effort to harness the functionality of oxide materials for advanced electronic

  1. A New Route to Nanoscale Conducting Channels in Insulating Oxides

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A New Route to Nanoscale Conducting Channels in Insulating Oxides Print Two-dimensional electron gases (2DEGs)-narrow conducting channels at the surfaces and interfaces of semiconductor materials-are the bedrock of conventional electronics. The startling 2004 discovery that such 2DEGs could be engineered at the interface between two insulating transition-metal oxides, SrTiO3 and LaAlO3, initiated a worldwide effort to harness the functionality of oxide materials for advanced electronic

  2. A New Route to Nanoscale Conducting Channels in Insulating Oxides

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A New Route to Nanoscale Conducting Channels in Insulating Oxides Print Two-dimensional electron gases (2DEGs)-narrow conducting channels at the surfaces and interfaces of semiconductor materials-are the bedrock of conventional electronics. The startling 2004 discovery that such 2DEGs could be engineered at the interface between two insulating transition-metal oxides, SrTiO3 and LaAlO3, initiated a worldwide effort to harness the functionality of oxide materials for advanced electronic

  3. Visible-light-induced instability in amorphous metal-oxide based TFTs for transparent electronics

    SciTech Connect (OSTI)

    Ha, Tae-Jun

    2014-10-15

    We investigate the origin of visible-light-induced instability in amorphous metal-oxide based thin film transistors (oxide-TFTs) for transparent electronics by exploring the shift in threshold voltage (V{sub th}). A large hysteresis window in amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs possessing large optical band-gap (≈3 eV) was observed in a visible-light illuminated condition whereas no hysteresis window was shown in a dark measuring condition. We also report the instability caused by photo irradiation and prolonged gate bias stress in oxide-TFTs. Larger V{sub th} shift was observed after photo-induced stress combined with a negative gate bias than the sum of that after only illumination stress and only negative gate bias stress. Such results can be explained by trapped charges at the interface of semiconductor/dielectric and/or in the gate dielectric which play a role in a screen effect on the electric field applied by gate voltage, for which we propose that the localized-states-assisted transitions by visible-light absorption can be responsible.

  4. Defect structure of indium tin oxide and its relationship to conductivity

    SciTech Connect (OSTI)

    Gonzalez, G. B.; Cohen, J. B.; Hwang, J.-H.; Mason, T. O.; Hodges, J. P.; Jorgensen, J. D.

    2000-05-09

    Doping In{sub 2}O{sub 3} with tin results in an improved transparent conducting oxide (TCO). Although indium tin oxide (ITO) is the most frequently used commercial TCO, its defect structure is still uncertain. Previously, its defect chemistry has been inferred based on the conductivity of the material. To directly study the defect structure of ITO, the authors prepared powders under different processing environments and performed neutron powder diffraction. Structural information was obtained by performing Rietveld analysis. The results include positions of the atoms, their thermal displacements, the fractional occupancy of the defect oxygen site, and the fractional occupancies of Sn on each of the two nonequivalent cation sites, showing a strong preference for the b site. These structural results are correlated with the measured electrical properties of the same samples.

  5. A New Route to Nanoscale Conducting Channels in Insulating Oxides

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A New Route to Nanoscale Conducting Channels in Insulating Oxides A New Route to Nanoscale Conducting Channels in Insulating Oxides Print Wednesday, 29 August 2012 00:00 Two-dimensional electron gases (2DEGs)-narrow conducting channels at the surfaces and interfaces of semiconductor materials-are the bedrock of conventional electronics. The startling 2004 discovery that such 2DEGs could be engineered at the interface between two insulating transition-metal oxides, SrTiO3 and LaAlO3, initiated a

  6. Plasmonic Three-Dimensional Transparent Conductor Based on Al-Doped Zinc Oxide-Coated Nanostructured Glass Using Atomic Layer Deposition

    SciTech Connect (OSTI)

    Malek, Gary A.; Aytug, Tolga; Liu, Qingfeng; Wu, Judy

    2015-04-02

    Transparent nanostructured glass coatings, fabricated on glass substrates, with a unique three-dimensional (3D) architecture were utilized as the foundation for the design of plasmonic 3D transparent conductors. Transformation of the non-conducting 3D structure to a conducting 3D network was accomplished through atomic layer deposition of aluminum-doped zinc oxide (AZO). After AZO growth, gold nanoparticles (AuNPs) were deposited by electronbeam evaporation to enhance light trapping and decrease the overall sheet resistance. Field emission scanning electron microscopy and atomic force microcopy images revealed the highly porous, nanostructured morphology of the AZO coated glass surface along with the in-plane dimensions of the deposited AuNPs. Sheet resistance measurements conducted on the coated samples verified that the electrical properties of the 3D network are comparable to that of the untextured two-dimensional AZO coated glass substrates. In addition, transmittance measurements of the glass samples coated with various AZO thicknesses showed preservation of the highly transparent nature of each sample, while the AuNPs demonstrated enhanced light scattering as well as light-trapping capability.

  7. Plasmonic Three-Dimensional Transparent Conductor Based on Al-Doped Zinc Oxide-Coated Nanostructured Glass Using Atomic Layer Deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Malek, Gary A.; Aytug, Tolga; Liu, Qingfeng; Wu, Judy

    2015-04-02

    Transparent nanostructured glass coatings, fabricated on glass substrates, with a unique three-dimensional (3D) architecture were utilized as the foundation for the design of plasmonic 3D transparent conductors. Transformation of the non-conducting 3D structure to a conducting 3D network was accomplished through atomic layer deposition of aluminum-doped zinc oxide (AZO). After AZO growth, gold nanoparticles (AuNPs) were deposited by electronbeam evaporation to enhance light trapping and decrease the overall sheet resistance. Field emission scanning electron microscopy and atomic force microcopy images revealed the highly porous, nanostructured morphology of the AZO coated glass surface along with the in-plane dimensions of the depositedmore » AuNPs. Sheet resistance measurements conducted on the coated samples verified that the electrical properties of the 3D network are comparable to that of the untextured two-dimensional AZO coated glass substrates. In addition, transmittance measurements of the glass samples coated with various AZO thicknesses showed preservation of the highly transparent nature of each sample, while the AuNPs demonstrated enhanced light scattering as well as light-trapping capability.« less

  8. Ag-Pd-Cu alloy inserted transparent indium tin oxide electrodes for organic solar cells

    SciTech Connect (OSTI)

    Kim, Hyo-Joong; Seo, Ki-Won; Kim, Han-Ki; Noh, Yong-Jin; Na, Seok-In

    2014-09-01

    The authors report on the characteristics of Ag-Pd-Cu (APC) alloy-inserted indium tin oxide (ITO) films sputtered on a glass substrate at room temperature for application as transparent anodes in organic solar cells (OSCs). The effect of the APC interlayer thickness on the electrical, optical, structural, and morphological properties of the ITO/APC/ITO multilayer were investigated and compared to those of ITO/Ag/ITO multilayer electrodes. At the optimized APC thickness of 8 nm, the ITO/APC/ITO multilayer exhibited a resistivity of 8.55 × 10{sup −5} Ω cm, an optical transmittance of 82.63%, and a figure-of-merit value of 13.54 × 10{sup −3} Ω{sup −1}, comparable to those of the ITO/Ag/ITO multilayer. Unlike the ITO/Ag/ITO multilayer, agglomeration of the metal interlayer was effectively relieved with APC interlayer due to existence of Pd and Cu elements in the thin region of the APC interlayer. The OSCs fabricated on the ITO/APC/ITO multilayer showed higher power conversion efficiency than that of OSCs prepared on the ITO/Ag/ITO multilayer below 10 nm due to the flatness of the APC layer. The improved performance of the OSCs with ITO/APC/ITO multilayer electrodes indicates that the APC alloy interlayer prevents the agglomeration of the Ag-based metal interlayer and can decrease the thickness of the metal interlayer in the oxide-metal-oxide multilayer of high-performance OSCs.

  9. Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

    DOE Patents [OSTI]

    Wu, X.; Coutts, T.J.; Sheldon, P.; Rose, D.H.

    1999-07-13

    A photovoltaic device is disclosed having a substrate, a layer of Cd[sub 2]SnO[sub 4] disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd[sub 2]SnO[sub 4], and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd[sub 2]SnO[sub 4] layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd[sub 2]SnO[sub 4], and depositing an electrically conductive film onto the thin film of semiconductor materials. 10 figs.

  10. Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

    DOE Patents [OSTI]

    Wu, Xuanzhi; Coutts, Timothy J.; Sheldon, Peter; Rose, Douglas H.

    1999-01-01

    A photovoltaic device having a substrate, a layer of Cd.sub.2 SnO.sub.4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd.sub.2 SnO.sub.4, and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd.sub.2 SnO.sub.4, and depositing an electrically conductive film onto the thin film of semiconductor materials.

  11. Fluorine compounds for doping conductive oxide thin films

    DOE Patents [OSTI]

    Gessert, Tim; Li, Xiaonan; Barnes, Teresa M; Torres, Jr., Robert; Wyse, Carrie L

    2013-04-23

    Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

  12. Investigation of Some Transparent Metal Oxides as Damp Heat Protective Coating for CIGS Solar Cells: Preprint

    SciTech Connect (OSTI)

    Pern, F. J.; Yan, F.; Zaaunbrecher, B.; To, B.; Perkins, J.; Noufi, R.

    2012-10-01

    We investigated the protective effectiveness of some transparent metal oxides (TMO) on CIGS solar cell coupons against damp heat (DH) exposure at 85oC and 85% relative humidity (RH). Sputter-deposited bilayer ZnO (BZO) with up to 0.5-um Al-doped ZnO (AZO) layer and 0.2-um bilayer InZnO were used as 'inherent' part of device structure on CdS/CIGS/Mo/SLG. Sputter-deposited 0.2-um ZnSnO and atomic layer deposited (ALD) 0.1-um Al2O3 were used as overcoat on typical BZO/CdS/CIGS/Mo/SLG solar cells. The results were all negative -- all TMO-coated CIGS cells exhibited substantial degradation in DH. Combining the optical photographs, PL and EL imaging, SEM surface micro-morphology, coupled with XRD, I-V and QE measurements, the causes of the device degradations are attributed to hydrolytic corrosion, flaking, micro-cracking, and delamination induced by the DH moisture. Mechanical stress and decrease in crystallinity (grain size effect) could be additional degrading factors for thicker AZO grown on CdS/CIGS.

  13. Mixed-conducting oxides for gas separation applications.

    SciTech Connect (OSTI)

    Balachandran, U.

    1999-04-20

    Mixed-conducting oxides are attracting increased attention because of their potential uses in high-temperature electrochemical applications such as solid-oxide fuel cells, batteries, sensors, and gas-permeable membranes. We are developing mixed-conducting, dense ceramic membranes to selectively transport oxygen and hydrogen. Ceramic membranes made of Sr-Fe-Co oxide (SFC), which exhibits high combined electronic and oxygen ionic conductivities, can be used to selectively transport oxygen during the partial oxidation of methane to synthesis gas (syngas, a mixture of CO and H{sub 2}). Steady-state oxygen permeability of SrFeCo{sub 0.5}O{sub x} has been measured as a function of oxygen-partial-pressure gradient and temperature. At 900 C, oxygen permeability was {approx}2.5 scc{center_dot}cm{sup {minus}2}-min{sup {minus}1} for a 2.9-mm-thick membrane, and this value increases as membrane thickness decreases. We have fabricated tubular SrFeCo{sub 0.5}O{sub x} membranes and operated them at 900 C for >1000 h during conversion of methane into syngas. Yttria-doped BaCeO{sub 3} (BCY) is a good protonic conductor; however, its lack of electronic conductivity can potentially limit its hydrogen permeability. To enhance the electronic conductivity and thus improve hydrogen permeation, a membrane composite material was developed. Nongalvanic permeation of hydrogen through the composite membrane was characterized as a function of thickness.

  14. Electronically conductive ceramics for high temperature oxidizing environments

    DOE Patents [OSTI]

    Kucera, Gene H. (Downers Grove, IL); Smith, James L. (Lemont, IL); Sim, James W. (Evergreen Park, IL)

    1986-01-01

    A high temperature, ceramic composition having electronic conductivity as measured by resistivity below about 500 ohm-cm, chemical stability particularly with respect to cathode conditions in a molten carbonate fuel cell, and composed of an alkali metal, transition metal oxide containing a dopant metal in the crystalline structure to replace a portion of the alkali metal or transition metal.

  15. Anisotropic thermal conductivity of thin polycrystalline oxide samples

    SciTech Connect (OSTI)

    Tiwari, A.; Boussois, K.; Nait-Ali, B.; Smith, D. S.; Blanchart, P.

    2013-11-15

    This paper reports about the development of a modified laser-flash technique and relation to measure the in-plane thermal diffusivity of thin polycrystalline oxide samples. Thermal conductivity is then calculated with the product of diffusivity, specific heat and density. Design and operating features for evaluating in-plane thermal conductivities are described. The technique is advantageous as thin samples are not glued together to measure in-plane thermal conductivities like earlier methods reported in literature. The approach was employed to study anisotropic thermal conductivity in alumina sheet, textured kaolin ceramics and montmorillonite. Since it is rare to find in-plane thermal conductivity values for such anisotropic thin samples in literature, this technique offers a useful variant to existing techniques.

  16. The role of probe oxide in local surface conductivity measurements

    SciTech Connect (OSTI)

    Barnett, C. J.; Kryvchenkova, O.; Wilson, L. S. J.; Maffeis, T. G. G.; Cobley, R. J.; Kalna, K.

    2015-05-07

    Local probe methods can be used to measure nanoscale surface conductivity, but some techniques including nanoscale four point probe rely on at least two of the probes forming the same low resistivity non-rectifying contact to the sample. Here, the role of probe shank oxide has been examined by carrying out contact and non-contact I V measurements on GaAs when the probe oxide has been controllably reduced, both experimentally and in simulation. In contact, the barrier height is pinned but the barrier shape changes with probe shank oxide dimensions. In non-contact measurements, the oxide modifies the electrostatic interaction inducing a quantum dot that alters the tunneling behavior. For both, the contact resistance change is dependent on polarity, which violates the assumption required for four point probe to remove probe contact resistance from the measured conductivity. This has implications for all nanoscale surface probe measurements and macroscopic four point probe, both in air and vacuum, where the role of probe oxide contamination is not well understood.

  17. Development of mixed-conducting oxides for gas separation

    SciTech Connect (OSTI)

    Balachandran, U.; Ma, B.; Maiya, P.S.

    1997-08-01

    Mixed-conducting oxides have been used in many applications, including fuel cells, gas separation membranes, sensors, and electrocatalysis. The authors are developing a mixed-conducting, dense ceramic membrane for selectively transporting oxygen and hydrogen. Ceramic membranes made of Sr-Fe-Co oxide, which has high combined electronic and oxygen ionic conductions, can be used to selectively transport oxygen during the partial oxidation of methane to synthesis gas (syngas, CO + H{sub 2}). The authors have measured the steady-state oxygen permeability of SrFeCo{sub 0.5}O{sub x} as a function of oxygen-partial-pressure gradient and temperature. At 900{degrees}C, oxygen permeability was {approx}2.5 scc{center_dot}cm{sup {minus}2}{center_dot}min{sup {minus}1} for a 2.9-mm-thick membrane and this value increases as membrane thickness decreases. The authors have fabricated tubular SrFeCo{sub 0.5}O{sub x} membranes and operated them at 900{degrees}C for >1000 h during conversion of methane into syngas. The hydrogen ion (proton) transport properties of yttria-doped BaCeO{sub 3} were investigated by impedance spectroscopy and open-cell voltage measurements. High proton conductivity and a high protonic transference number make yttria-doped BaCeO{sub 3} a potential membrane for hydrogen separation.

  18. Stability Issues of Transparent Conducting Oxides (TCOs) for Thin-Film Photovoltaics (Presentation)

    SciTech Connect (OSTI)

    Pern, J.

    2008-12-01

    Study of stability issues of TCOs for thin-film PV, including degradation of optical, electrical, and structural properties of TCOs in damp heat and required encapsulation to prevent moisture egress.

  19. KAg11(VO4)4 as a Candidate p-Type Transparent Conducting Oxide

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and theory unveil a new asymmetry character in topological insulators: the in-plane orbital wavefunction of surface states switches from tangential (a) to radial (b) when the energy surface varies from above to below the Dirac point. Y. Cao, J.A. Waugh, X.-W. Zhang, J.-W. Luo, Q. Wang, T.J. Reber, S.K. Mo, Z. Xu, A. Yang, J. Schneeloch, G. Gu, M. Brahlek, N. Bansal, S. Oh, A. Zunger, and D.S. Dessau, Nature Physics 9, 499-504 (2013). Discovery of Asymmetry in the Surface States of Topological

  20. Diffusion-controlled creep in mixed-conducting oxides

    SciTech Connect (OSTI)

    Routbort, J.L.; Goretta, K.C.; Cook, R.E.; Wolfenstine, J.; Armstrong, T.R.; Clauss, C.; Dominguez-Rodriguez, A.

    1996-06-01

    Steady-state creep rate of the mixed conducting oxides La{sub 1-x}Sr{sub x}MnO{sub 3} (x=0.1, 0.15, 0.25) and La{sub 0.7}Ca{sub 0.3}MnO{sub 3} has been investigated between 1150 and 1300 C. Creep parameters and TEM indicate that deformation is controlled by lattice diffusion of one of the cations. Dependence of creep rate on Sr concentration, combined with a point-defect model, confirms this hypothesis; however the oxygen partial pressure dependence of creep (from 10{sup -1} to 2x10{sup 4} Pa) cannot be accounted for within the framework of a simple point-defect model.

  1. High surface area, electrically conductive nanocarbon-supported metal oxide

    DOE Patents [OSTI]

    Worsley, Marcus A.; Han, Thomas Yong-Jin; Kuntz, Joshua D.; Cervantes, Octavio; Gash, Alexander E.; Baumann, Theodore F.; Satcher, Jr., Joe H.

    2015-07-14

    A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust.

  2. High surface area, electrically conductive nanocarbon-supported metal oxide

    DOE Patents [OSTI]

    Worsley, Marcus A; Han, Thomas Yong-Jin; Kuntz, Joshua D; Cervanted, Octavio; Gash, Alexander E; Baumann, Theodore F; Satcher, Jr., Joe H

    2014-03-04

    A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust.

  3. Design of ternary alkaline-earth metal Sn(II) oxides with potential good p-type conductivity

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Du, Mao -Hua; Singh, David J.; Zhang, Lijun; Li, Yuwei; Xu, Qiaoling; Ma, Yanming; Zheng, Weitao

    2016-04-19

    Oxides with good p-type conductivity have been long sought after to achieve high performance all-oxide optoelectronic devices. Divalent Sn(II) based oxides are promising candidates because of their rather dispersive upper valence bands caused by the Sn-5s/O-2p anti-bonding hybridization. There are so far few known Sn(II) oxides being p-type conductive suitable for device applications. Here, we present via first-principles global optimization structure searches a material design study for a hitherto unexplored Sn(II)-based system, ternary alkaline-earth metal Sn(II) oxides in the stoichiometry of MSn2O3 (M = Mg, Ca, Sr, Ba). We identify two stable compounds of SrSn2O3 and BaSn2O3, which can bemore » stabilized by Sn-rich conditions in phase stability diagrams. Their structures follow the Zintl behaviour and consist of basic structural motifs of SnO3 tetrahedra. Unexpectedly they show distinct electronic properties with band gaps ranging from 1.90 (BaSn2O3) to 3.15 (SrSn2O3) eV, and hole effective masses ranging from 0.87 (BaSn2O3) to above 6.0 (SrSn2O3) m0. Further exploration of metastable phases indicates a wide tunability of electronic properties controlled by the details of the bonding between the basic structural motifs. Lastly, this suggests further exploration of alkaline-earth metal Sn(II) oxides for potential applications requiring good p-type conductivity such as transparent conductors and photovoltaic absorbers.« less

  4. Microchannel apparatus and methods of conducting catalyzed oxidative dehydrogenation

    DOE Patents [OSTI]

    Tonkovich, Anna Lee; Yang, Bin; Perry, Steven T.; Mazanec, Terry; Arora, Ravi; Daly, Francis P.; Long, Richard; Yuschak, Thomas D.; Neagle, Paul W.; Glass, Amanda

    2011-08-16

    Methods of oxidative dehydrogenation are described. Surprisingly, Pd and Au alloys of Pt have been discovered to be superior for oxidative dehydrogenation in microchannels. Methods of forming these catalysts via an electroless plating methodology are also described. An apparatus design that minimizes heat transfer to the apparatus' exterior is also described.

  5. A New Route to Nanoscale Conducting Channels in Insulating Oxides

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    interacting, electrons could hold the key to engineering novel functionality into a new generation of all-oxide electronic devices. ARPES measurements of a 2DEG in SrTiO3 and...

  6. Electronically conducting metal oxide nanoparticles and films for optical sensing applications

    DOE Patents [OSTI]

    Ohodnicki, Jr., Paul R.; Wang, Congjun; Andio, Mark A

    2014-09-16

    The disclosure relates to a method of detecting a change in a chemical composition by contacting a conducting oxide material with a monitored stream, illuminating the conducting oxide material with incident light, collecting exiting light, monitoring an optical signal based on a comparison of the incident light and the exiting light, and detecting a shift in the optical signal. The conducting metal oxide has a carrier concentration of at least 10.sup.17/cm.sup.3, a bandgap of at least 2 eV, and an electronic conductivity of at least 10.sup.-1 S/cm, where parameters are specified at the gas stream temperature. The optical response of the conducting oxide materials is proposed to result from the high carrier concentration and electronic conductivity of the conducting metal oxide, and the resulting impact of changing gas atmospheres on that relatively high carrier concentration and electronic conductivity. These changes in effective carrier densities and electronic conductivity of conducting metal oxide films and nanoparticles are postulated to be responsible for the change in measured optical absorption associated with free carriers. Exemplary conducting metal oxides include but are not limited to Al-doped ZnO, Sn-doped In.sub.2O.sub.3, Nb-doped TiO.sub.2, and F-doped SnO.sub.2.

  7. Light transmissive electrically conductive oxide electrode formed in the presence of a stabilizing gas

    DOE Patents [OSTI]

    Tran, Nang T.; Gilbert, James R.

    1992-08-04

    A light transmissive, electrically conductive oxide is doped with a stabilizing gas such as H.sub.2 and H.sub.2 O. The oxide is formed by sputtering a light transmissive, electrically conductive oxide precursor onto a substrate at a temperature from 20.degree. C. to 300.degree. C. Sputtering occurs in a gaseous mixture including a sputtering gas and the stabilizing gas.

  8. Operation of mixed conducting metal oxide membrane systems under transient conditions

    DOE Patents [OSTI]

    Carolan, Michael Francis

    2008-12-23

    Method of operating an oxygen-permeable mixed conducting membrane having an oxidant feed side, an oxidant feed surface, a permeate side, and a permeate surface, which method comprises controlling the differential strain between the permeate surface and the oxidant feed surface at a value below a selected maximum value by varying the oxygen partial pressure on either or both of the oxidant feed side and the permeate side of the membrane.

  9. Transparent conductive nano-composites

    DOE Patents [OSTI]

    Geohegan, David Bruce; Ivanov, Ilia N; Puretzky, Alexander A; Jesse, Stephen; Hu, Bin; Garrett, Matthew; Zhao, Bin

    2013-09-24

    The present invention, in one embodiment, provides a method of forming an organic electric device that includes providing a plurality of carbon nanostructures; and dispersing the plurality of carbon nanostructures in a polymeric matrix to provide a polymeric composite, wherein when the plurality of carbon nanostructures are present at a first concentration an interface of the plurality of carbon nanostructures and the polymeric matrix is characterized by charge transport when an external energy is applied, and when the plurality of carbon nanostructures are present at a second concentration the interface of the plurality of carbon nanostructures and the polymeric matrix are characterized by exciton dissociation when an external energy is applied, wherein the first concentration is less than the second concentration.

  10. Transparent conductive nano-composites

    DOE Patents [OSTI]

    Geohegan, David Bruce; Ivanov, Ilia N.; Puretzky, Alexander A.; Jesse, Stephen; Hu, Bin; Garrett, Matthew; Zhao, Bin

    2011-04-12

    The present invention, in one embodiment, provides a method of forming an organic electric device that includes providing a plurality of carbon nanostructures; and dispersing the plurality of carbon nanostructures in a polymeric matrix to provide a polymeric composite, wherein when the plurality of carbon nanostructures are present at a first concentration an interface of the plurality of carbon nanostructures and the polymeric matrix is characterized by charge transport when an external energy is applied, and when the plurality of carbon nanostructures are present at a second concentration the interface of the plurality of carbon nanostructures and the polymeric matrix are characterized by exciton dissociation when an external energy is applied, wherein the first concentration is less than the second concentration.

  11. Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination

    SciTech Connect (OSTI)

    Minami, Tadatsugu; Ohtani, Yuusuke; Miyata, Toshihiro; Kuboi, Takeshi

    2007-07-15

    A newly developed Al-doped ZnO (AZO) thin-film magnetron-sputtering deposition technique that decreases resistivity, improves resistivity distribution, and produces high-rate depositions has been demonstrated by dc magnetron-sputtering depositions that incorporate rf power (dc+rf-MS), either with or without the introduction of H{sub 2} gas into the deposition chamber. The dc+rf-MS preparations were carried out in a pure Ar or an Ar+H{sub 2} (0%-2%) gas atmosphere at a pressure of 0.4 Pa by adding a rf component (13.56 MHz) to a constant dc power of 80 W. The deposition rate in a dc+rf-MS deposition incorporating a rf power of 150 W was approximately 62 nm/min, an increase from the approximately 35 nm/min observed in dc magnetron sputtering with a dc power of 80 W. A resistivity as low as 3x10{sup -4} {omega} cm and an improved resistivity distribution could be obtained in AZO thin films deposited on substrates at a low temperature of 150 deg. C by dc+rf-MS with the introduction of hydrogen gas with a content of 1.5%. This article describes the effects of adding a rf power component (i.e., dc+rf-MS deposition) as well as introducing H{sub 2} gas into dc magnetron-sputtering preparations of transparent conducting AZO thin films.

  12. Electronic structure of Al-doped ZnO transparent conductive thin films studied by x-ray absorption and emission spectroscopies

    SciTech Connect (OSTI)

    Huang, W. H.; Sun, S. J.; Chiou, J. W.; Chou, H.; Chan, T. S.; Lin, H.-J.; Kumar, Krishna; Guo, J.-H.

    2011-11-15

    This study used O K-, Zn L{sub 3}-, Zn K-, and Al K-edges x-ray absorption near-edge structure (XANES) and O K-edge x-ray emission spectroscopy (XES) measurements to investigate the electronic structure of transparent Al-doped ZnO (AZO) thin film conductors. The samples were prepared on glass substrates at a low temperature near 77 K by using a standard RF sputtering method. High-purity Ne (5N) was used as the sputtering gas. The crystallography of AZO thin films gradually transformed from the ZnO wurtize structure to an amorphous structure during sample deposition, which suggests the suitability to grow on flexible substrates, eliminating the severe degradation due to fragmentation by repeated bending. The O K- and Zn L{sub 3}-edges XANES spectra of AZO thin films revealed a decrease in the number of both O 2p and Zn 3d unoccupied states when the pressure of Ne was increased from 5 to 100 mTorr. In contrast, Al K-edges XANES spectra showed that the number of unoccupied states of Al 3p increased in conjunction with the pressure of Ne, indicating an electron transfer from Al to O atoms, and suggesting that Al doping increases the negative effective charge of oxygen ions. XES and XANES spectra of O 2p states at the O K-edge also revealed that Al doping not only raised the conduction-band-minimum, but also increased the valence-band-maximum and the band-gap. The results indicate that the reduction in conductivity of AZO thin films is due to the generation of ionic characters, the increase in band-gap, and the decrease in density of unoccupied states of oxygen.

  13. Thin film ion conducting coating

    DOE Patents [OSTI]

    Goldner, Ronald B.; Haas, Terry; Wong, Kwok-Keung; Seward, George

    1989-01-01

    Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

  14. Development of a tritium monitor combined with an electrochemical tritium pump using a proton conducting oxide

    SciTech Connect (OSTI)

    Tanaka, M.; Sugiyama, T.

    2015-03-15

    The detection of low level tritium is one of the key issues for tritium management in tritium handling facilities. Such a detection can be performed by tritium monitors based on proton conducting oxide technique. We tested a tritium monitoring system composed of a commercial proportional counter combined with an electrochemical hydrogen pump equipped with CaZr{sub 0.9}In{sub 0.1}O{sub 3-α} as proton conducting oxide. The hydrogen pump operated at 973 K under electrolysis conditions using tritiated water vapor (HTO). The proton conducting oxide extracts tritium molecules (HT) from HTO and tritium concentration is measured by the proportional counter. The advantage of the proposed tritium monitoring system is that it is able to convert HTO into molecular hydrogen.

  15. Fabrication of ion conductive tin oxide-phosphate amorphous thin films by atomic layer deposition

    SciTech Connect (OSTI)

    Park, Suk Won; Jang, Dong Young; Kim, Jun Woo; Shim, Joon Hyung

    2015-07-15

    This work reports the atomic layer deposition (ALD) of tin oxide-phosphate films using tetrakis(dimethylamino)tin and trimethyl phosphate as precursors. The growth rates were 1.23–1.84 Å/cycle depending upon the deposition temperature and precursor combination. The ionic conductivity of the ALD tin oxide-phosphate films was evaluated by cross-plane impedance measurements in the temperature range of 50–300 °C under atmospheric air, with the highest conductivity measured as 1.92 × 10{sup −5} S cm{sup −1} at 300 °C. Furthermore, high-resolution x-ray photoelectron spectroscopy exhibited two O1s peaks that were classified as two subpeaks of hydroxyl ions and oxygen ions, revealing that the quantity of hydroxyl ions in the ALD tin oxide-phosphate films influences their ionic conductivity.

  16. Electronically conductive perovskite-based oxide nanoparticles and films for optical sensing applications

    DOE Patents [OSTI]

    Ohodnicki, Jr., Paul R; Schultz, Andrew M

    2015-04-28

    The disclosure relates to a method of detecting a change in a chemical composition by contacting a electronically conducting perovskite-based metal oxide material with a monitored stream, illuminating the electronically conducting perovskite-based metal oxide with incident light, collecting exiting light, monitoring an optical signal based on a comparison of the incident light and the exiting light, and detecting a shift in the optical signal. The electronically conducting perovskite-based metal oxide has a perovskite-based crystal structure and an electronic conductivity of at least 10.sup.-1 S/cm, where parameters are specified at the gas stream temperature. The electronically conducting perovskite-based metal oxide has an empirical formula A.sub.xB.sub.yO.sub.3-.delta., where A is at least a first element at the A-site, B is at least a second element at the B-site, and where 0.8conducting perovskite-based oxides include but are not limited to La.sub.1-xSr.sub.xCoO.sub.3, La.sub.1-xSr.sub.xMnO.sub.3, LaCrO.sub.3, LaNiO.sub.3, La.sub.1-xSr.sub.xMn.sub.1-yCr.sub.yO.sub.3, SrFeO.sub.3, SrVO.sub.3, La-doped SrTiO.sub.3, Nb-doped SrTiO.sub.3, and SrTiO.sub.3-.delta..

  17. CRAD, Conduct of Operations- Y-12 Enriched Uranium Operations Oxide Conversion Facility

    Broader source: Energy.gov [DOE]

    A section of Appendix C to DOE G 226.1-2 "Federal Line Management Oversight of Department of Energy Nuclear Facilities." Consists of Criteria Review and Approach Documents (CRADs) used for a January, 2005 assessment of Conduct of Operations program at the Y-12 - Enriched Uranium Operations Oxide Conversion Facility.

  18. Composite electrolyte with proton conductivity for low-temperature solid oxide fuel cell

    SciTech Connect (OSTI)

    Raza, Rizwan; Ahmed, Akhlaq; Akram, Nadeem; Saleem, Muhammad; Niaz Akhtar, Majid; Ajmal Khan, M.; Abbas, Ghazanfar; Alvi, Farah; Yasir Rafique, M.; Sherazi, Tauqir A.; Shakir, Imran; Mohsin, Munazza; Javed, Muhammad Sufyan; Zhu, Bin E-mail: zhubin@hubu.edu.cn

    2015-11-02

    In the present work, cost-effective nanocomposite electrolyte (Ba-SDC) oxide is developed for efficient low-temperature solid oxide fuel cells (LTSOFCs). Analysis has shown that dual phase conduction of O{sup −2} (oxygen ions) and H{sup +} (protons) plays a significant role in the development of advanced LTSOFCs. Comparatively high proton ion conductivity (0.19 s/cm) for LTSOFCs was achieved at low temperature (460 °C). In this article, the ionic conduction behaviour of LTSOFCs is explained by carrying out electrochemical impedance spectroscopy measurements. Further, the phase and structure analysis are investigated by X-ray diffraction and scanning electron microscopy techniques. Finally, we achieved an ionic transport number of the composite electrolyte for LTSOFCs as high as 0.95 and energy and power density of 90% and 550 mW/cm{sup 2}, respectively, after sintering the composite electrolyte at 800 °C for 4 h, which is promising. Our current effort toward the development of an efficient, green, low-temperature solid oxide fuel cell with the incorporation of high proton conductivity composite electrolyte may open frontiers in the fields of energy and fuel cell technology.

  19. Remote Monitoring Transparency Program

    SciTech Connect (OSTI)

    Sukhoruchkin, V.K.; Shmelev, V.M.; Roumiantsev, A.N.; Croessmann, C.D.; Horton, R.D.; Matter, J.C.; Czajkowski, A.F.; Sheely, K.B.; Bieniawski, A.J.

    1996-12-31

    The objective of the Remote Monitoring Transparency Program is to evaluate and demonstrate the use of remote monitoring technologies to advance nonproliferation and transparency efforts that are currently being developed by Russia and the US without compromising the national security of the participating parties. Under a lab-to-lab transparency contract between Sandia National Laboratories (SNL) and the Kurchatov Institute (KI RRC), the Kurchatov Institute will analyze technical and procedural aspects of the application of remote monitoring as a transparency measure to monitor inventories of direct-use HEU and plutonium (e.g., material recovered from dismantled nuclear weapons). A goal of this program is to assist a broad range of political and technical experts in learning more about remote monitoring technologies that could be used to implement nonproliferation, arms control, and other security and confidence building measures. Specifically, this program will: (1) begin integrating Russian technologies into remote monitoring systems; (2) develop remote monitoring procedures that will assist in the application of remote monitoring techniques to monitor inventories of HEU and Pu from dismantled nuclear weapons; and (3) conduct a workshop to review remote monitoring fundamentals, demonstrate an integrated US/Russian remote monitoring will have on the national security of participating countries.

  20. Zinc oxide modified with benzylphosphonic acids as transparent electrodes in regular and inverted organic solar cell structures

    SciTech Connect (OSTI)

    Lange, Ilja; Reiter, Sina; Kniepert, Juliane; Piersimoni, Fortunato; Brenner, Thomas; Neher, Dieter; Pätzel, Michael; Hildebrandt, Jana; Hecht, Stefan

    2015-03-16

    An approach is presented to modify the work function of solution-processed sol-gel derived zinc oxide (ZnO) over an exceptionally wide range of more than 2.3 eV. This approach relies on the formation of dense and homogeneous self-assembled monolayers based on phosphonic acids with different dipole moments. This allows us to apply ZnO as charge selective bottom electrodes in either regular or inverted solar cell structures, using poly(3-hexylthiophene):phenyl-C71-butyric acid methyl ester as the active layer. These devices compete with or even surpass the performance of the reference on indium tin oxide/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate. Our findings highlight the potential of properly modified ZnO as electron or hole extracting electrodes in hybrid optoelectronic devices.

  1. Low temperature formation of electrode having electrically conductive metal oxide surface

    DOE Patents [OSTI]

    Anders, Simone; Anders, Andre; Brown, Ian G.; McLarnon, Frank R.; Kong, Fanping

    1998-01-01

    A low temperature process is disclosed for forming metal suboxides on substrates by cathodic arc deposition by either controlling the pressure of the oxygen present in the deposition chamber, or by controlling the density of the metal flux, or by a combination of such adjustments, to thereby control the ratio of oxide to metal in the deposited metal suboxide coating. The density of the metal flux may, in turn, be adjusted by controlling the discharge current of the arc, by adjusting the pulse length (duration of on cycle) of the arc, and by adjusting the frequency of the arc, or any combination of these parameters. In a preferred embodiment, a low temperature process is disclosed for forming an electrically conductive metal suboxide, such as, for example, an electrically conductive suboxide of titanium, on an electrode surface, such as the surface of a nickel oxide electrode, by such cathodic arc deposition and control of the deposition parameters. In the preferred embodiment, the process results in a titanium suboxide-coated nickel oxide electrode exhibiting reduced parasitic evolution of oxygen during charging of a cell made using such an electrode as the positive electrode, as well as exhibiting high oxygen overpotential, resulting in suppression of oxygen evolution at the electrode at full charge of the cell.

  2. Black Conductive Titanium Oxide High-Capacity Materials for Battery Electrodes

    SciTech Connect (OSTI)

    Han, W.

    2011-05-18

    Stoichiometric titanium dioxide (TiO{sub 2}) is one of the most widely studied transitionmetal oxides because of its many potential applications in photoelectrochemical systems, such as dye-sensitized TiO{sub 2} electrodes for photovoltaic solar cells, and water-splitting catalysts for hydrogen generation, and in environmental purification for creating or degrading specific compounds. However, TiO{sub 2} has a wide bandgap and high electrical resistivity, which limits its use as an electrode. A set of non-stoichiometric titanium oxides called the Magneli phases, having a general formula of Ti{sub n}O{sub 2n-1} with n between 4 and 10, exhibits lower bandgaps and resistivities, with the highest electrical conductivities reported for Ti{sub 4}O{sub 7}. These phases have been formulated under different conditions, but in all reported cases the resulting oxides have minimum grain sizes on the order of micrometers, regardless of the size of the starting titanium compounds. In this method, nanoparticles of TiO{sub 2} or hydrogen titanates are first coated with carbon using either wet or dry chemistry methods. During this process the size and shape of the nanoparticles are 'locked in.' Subsequently the carbon-coated nanoparticles are heated. This results in the transformation of the original TiO{sub 2} or hydrogen titanates to Magneli phases without coarsening, so that the original size and shape of the nanoparticles are maintained to a precise degree. People who work on batteries, fuel cells, ultracapacitors, electrosynthesis cells, electro-chemical devices, and soil remediation have applications that could benefit from using nanoscale Magneli phases of titanium oxide. Application of these electrode materials may not be limited to substitution for TiO{sub 2} electrodes. Combining the robustness and photosensitivity of TiO{sub 2} with higher electrical conductivity may result in a general electrode material.

  3. Transparent electrode for optical switch

    DOE Patents [OSTI]

    Goldhar, Julius; Henesian, Mark A.

    1986-01-01

    A low pressure gas electrode utilizing ionized gas in a glow discharge regime forms a transparent electrode for electro-optical switches. The transparent electrode comprises a low pressure gas region on both sides of the crystal. When the gas is ionized, e.g., by a glow discharge in the low pressure gas, the plasma formed is a good conductor. The gas electrode acts as a highly uniform conducting electrode. Since the plasma is transparent to a high energy laser beam passing through the crystal, the electrode is a transparent electrode. A crystal exposed from two sides to such a plasma can be charged up uniformly to any desired voltage. The plasma can be created either by the main high voltage pulser used to charge up the crystal or by auxiliary discharges or external sources of ionization. A typical configuration utilizes 10 torr argon in the discharge region adjacent to each crystal face.

  4. Oxidation Resistant, Cr Retaining, Electrically Conductive Coatings on Metallic Alloys for SOFC Interconnects

    SciTech Connect (OSTI)

    Vladimir Gorokhovsky

    2008-03-31

    This report describes significant results from an on-going, collaborative effort to enable the use of inexpensive metallic alloys as interconnects in planar solid oxide fuel cells (SOFCs) through the use of advanced coating technologies. Arcomac Surface Engineering, LLC, under the leadership of Dr. Vladimir Gorokhovsky, is investigating filtered-arc and filtered-arc plasma-assisted hybrid coating deposition technologies to promote oxidation resistance, eliminate Cr volatility, and stabilize the electrical conductivity of both standard and specialty steel alloys of interest for SOFC metallic interconnect (IC) applications. Arcomac has successfully developed technologies and processes to deposit coatings with excellent adhesion, which have demonstrated a substantial increase in high temperature oxidation resistance, stabilization of low Area Specific Resistance values and significantly decrease Cr volatility. An extensive matrix of deposition processes, coating compositions and architectures was evaluated. Technical performance of coated and uncoated sample coupons during exposures to SOFC interconnect-relevant conditions is discussed, and promising future directions are considered. Cost analyses have been prepared based on assessment of plasma processing parameters, which demonstrate the feasibility of the proposed surface engineering process for SOFC metallic IC applications.

  5. TRANSPARENT COATINGS FOR SOLAR CELLS RESEARCH

    SciTech Connect (OSTI)

    Glatkowski, P.J.; Landis, D.A.

    2013-04-16

    Todays solar cells are fabricated using metal oxide based transparent conductive coatings (TCC) or metal wires with optoelectronic performance exceeding that currently possible with Carbon Nanotube (CNT) based TCCs. The motivation for replacing current TCC is their inherent brittleness, high deposition cost, and high deposition temperatures; leading to reduced performance on thin substrates. With improved processing, application and characterization techniques Nanofiber and/or CNT based TCCs can overcome these shortcomings while offering the ability to be applied in atmospheric conditions using low cost coating processes At todays level of development, CNT based TCC are nearing commercial use in touch screens, some types of information displays (i.e. electronic paper), and certain military applications. However, the resistivity and transparency requirements for use in current commercial solar cells are more stringent than in many of these applications. Therefore, significant research on fundamental nanotube composition, dispersion and deposition are required to reach the required performance commanded by photovoltaic devices. The objective of this project was to research and develop transparent conductive coatings based on novel nanomaterial composite coatings, which comprise nanotubes, nanofibers, and other nanostructured materials along with binder materials. One objective was to show that these new nanomaterials perform at an electrical resistivity and optical transparency suitable for use in solar cells and other energy-related applications. A second objective was to generate new structures and chemistries with improved resistivity and transparency performance. The materials also included the binders and surface treatments that facilitate the utility of the electrically conductive portion of these composites in solar photovoltaic devices. Performance enhancement venues included: CNT purification and metallic tube separation techniques, chemical doping, CNT

  6. Interface engineering in epitaxial growth of layered oxides via a conducting layer insertion

    SciTech Connect (OSTI)

    Yun, Yu; Meng, Dechao; Wang, Jianlin; Ma, Chao; Zhai, Xiaofang; Huang, Haoliang; Fu, Zhengping; Peng, Ranran; Brown, Gail J.; and others

    2015-07-06

    There is a long-standing challenge in the fabrication of layered oxide epitaxial films due to their thermodynamic phase-instability and the large stacking layer number. Recently, the demand for high-quality thin films is strongly pushed by their promising room-temperature multiferroic properties. Here, we find that by inserting a conducting and lattice matched LaNiO{sub 3} buffer layer, high quality m = 5 Bi{sub 6}FeCoTi{sub 3}O{sub 18} epitaxial films can be fabricated using the laser molecular beam epitaxy, in which the atomic-scale sharp interface between the film and the metallic buffer layer explains the enhanced quality. The magnetic and ferroelectric properties of the high quality Bi{sub 6}FeCoTi{sub 3}O{sub 18} films are studied. This study demonstrates that insertion of the conducting layer is a powerful method in achieving high quality layered oxide thin films, which opens the door to further understand the underline physics and to develop new devices.

  7. Highly efficient blue organic light emitting device using indium-free transparent anode Ga:ZnO with scalability for large area coating

    SciTech Connect (OSTI)

    Wang, Liang; Matson, Dean W.; Polikarpov, Evgueni; Swensen, James S.; Bonham, Charles C.; Cosimbescu, Lelia; Berry, J. J.; Ginley, D. S.; Gaspar, Daniel J.; Padmaperuma, Asanga B.

    2010-02-15

    The availability of economically-produced and environmentally-stable transparent conductive oxide (TCO) coatings is critical for the development of a variety of electronic devices requiring transparent electrodes. Such devices include liquid crystal display pixels and organic light emitting diodes (OLEDs),[1, 2] solar cell applications,[3, 4] and electrically heated windows.[5, 6] The materials fulfilling these requirements are usually wide band gap inorganic transparent conductive oxides (TCOs). Tin-doped indium oxide, or ITO, has traditionally been used for electronic TCO applications because of its low resistivity, high work function and transparency. Due to the increasing cost and limited supply of indium and its tendency to migrate in to the device, there has been increasing research interest to substitute ITO with an indium-free material. A number of alternative metal oxides and doped oxides have been evaluated as TCO materials with varying degrees of success.[7, 8] Among these alternatives to ITO, gallium-doped zinc oxide (GZO) [2, 9] and aluminium-doped zinc oxide (AZO) [10, 11] have drawn particular attention. These materials have been demonstrated to have resistivities and transparencies approaching those of the best ITO, low toxicity, and much lower materials cost. Although AZO is attractive as a TCO electrode material, GZO features a greater resistance to oxidation as a result of gallium’s greater electronegativity compared to Submitted to 2 aluminum.[12, 13

  8. Fundamental limits on optical transparency of transparent conducting...

    Office of Scientific and Technical Information (OSTI)

    Subject: solar (photovoltaic), solid state lighting, phonons, thermoelectric, bio-inspired, energy storage (including batteries and capacitors), electrodes - solar, defects, ...

  9. Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide

    DOE Patents [OSTI]

    Feng, Tom; Ghosh, Amal K.

    1979-01-01

    In preparing tin oxide and indium tin oxide-silicon heterojunction solar cells by electron beam sublimation of the oxide and subsequent deposition thereof on the silicon, the engineering efficiency of the resultant cell is enhanced by depositing the oxide at a predetermined favorable angle of incidence. Typically the angle of incidence is between 40.degree. and 70.degree. and preferably between 55.degree. and 65.degree. when the oxide is tin oxide and between 40.degree. and 70.degree. when the oxide deposited is indium tin oxide. gi The Government of the United States of America has rights in this invention pursuant to Department of Energy Contract No. EY-76-C-03-1283.

  10. Proton conducting sodium alginate electrolyte laterally coupled low-voltage oxide-based transistors

    SciTech Connect (OSTI)

    Liu, Yang Hui; Wan, Qing; Qiang Zhu, Li; Shi, Yi

    2014-03-31

    Solution-processed sodium alginate electrolyte film shows a high proton conductivity of ?5.5??10{sup ?3} S/cm and a high lateral electric-double-layer (EDL) capacitance of ?2.0??F/cm{sup 2} at room temperature with a relative humidity of 57%. Low-voltage in-plane-gate indium-zinc-oxide-based EDL transistors laterally gated by sodium alginate electrolytes are fabricated on glass substrates. The field-effect mobility, current ON/OFF ratio, and subthreshold swing of such EDL transistors are estimated to be 4.2 cm{sup 2} V{sup ?1} s{sup ?1}, 2.8??10{sup 6}, and 130?mV/decade, respectively. At last, a low-voltage driven resistor-load inverter is also demonstrated. Such in-plane-gate EDL transistors have potential applications in portable electronics and low-cost biosensors.

  11. Relationships between strength, electrical conductivity, and density for oxidized PGX graphite

    SciTech Connect (OSTI)

    Morgan, W.C.; Prince, J.M.

    1983-07-01

    The core of a High Temperature Gas-Cooled Reactor (HTGR) rests on massive graphite core support blocks; which, in turn, are supported by core support posts. PGX graphite was used for the core support blocks of the Fort St. Vrain HTGR (the only operating HTGR); and, evidently, is the leading candidate material for use in advanced HTGRs. Therefore, PGX was chosen for the initial tests on the use of eddy current techniques to monitor strength changes as a result of oxidation. The results of these initial tests showed that both compressive strength and electrical conductivity correlated very well with density. However, only a single log of PGX was used for the initial tests; therefore, it was necessary to determine if the correlations could be extended to other logs of PGX.

  12. NREL Designs Promising New Oxides for Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2012-04-01

    High-efficiency, thin-film solar cells require electrical contacts with high electrical conductivity, and the top contact must also have high optical transparency. This need is currently met by transparent conducting oxides (TCOs), which conduct electricity but are 90% transparent to visible light. Scientists at the National Renewable Energy Laboratory (NREL) have derived three key design principles for selecting promising materials for TCO contacts. NREL's application of these design principles has resulted in a 10,000-fold improvement in conductivity for one TCO material.

  13. Aluminum-doped Zinc Oxide Nanoink

    Energy Innovation Portal (Marketing Summaries) [EERE]

    2014-08-15

    Scientists at Berkeley Lab have developed a method for fabricating conductive aluminum-doped zinc oxide (AZO) nanocrystals that provide a lower cost, less toxic, earth-abundant alternative to the widely used transparent conductive oxide (TCO) indium tin oxide while offering comparable optical and electronic properties. TCOs are used in devices such as flat screen displays, photovoltaic cells, photochromic windows, chemical sensors, and biosensors....

  14. Optoelectronic properties and interband transition of La-doped BaSnO{sub 3} transparent conducting films determined by variable temperature spectral transmittance

    SciTech Connect (OSTI)

    Xing, S. M.; Shan, C.; Jiang, K.; Zhu, J. J.; Li, Y. W.; Hu, Z. G. Chu, J. H.

    2015-03-14

    Perovskite-structured Ba{sub 1?x}La{sub x}SnO{sub 3} (x?=?00.10) films have been directly grown on (0001) sapphire substrates by a sol-gel method. Optical properties and bandgap energy of the films have been investigated by transmittance spectra from 10?K to 450?K. It indicates that these films exhibit a high transmission of more than 80% in the visible region. With increasing temperature, there is a significant bandgap shrinkage of about 0.5?eV for lightly La doping (x???0.04) films. For heavily La doping concentration (x???0.06), the bandgap remains nearly stable with the temperature and La composition. This is due to the fact that the lattice expansion caused by La doping is close to the saturation for the film doped with x?=?0.06. Moreover, temperature dependent conductivity behavior shows a similar pattern, which suggests that the doping concentration of La-doped BaSnO{sub 3} (BLSO) films has a saturated state. The La introduction can modify the Sn 5s-O 2p antibonding state and the nonbonding O 2p orbital, which remarkably affect the electronic bandgap of the BLSO films.

  15. Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom

    DOE Patents [OSTI]

    Christen, David K.; He, Qing

    2001-01-01

    The present invention provides a biaxially textured laminate article having a polycrystalline biaxially textured metallic substrate with an electrically conductive oxide layer epitaxially deposited thereon and methods for producing same. In one embodiment a biaxially texture Ni substrate has a layer of LaNiO.sub.3 deposited thereon. An initial layer of electrically conductive oxide buffer is epitaxially deposited using a sputtering technique using a sputtering gas which is an inert or forming gas. A subsequent layer of an electrically conductive oxide layer is then epitaxially deposited onto the initial layer using a sputtering gas comprising oxygen. The present invention will enable the formation of biaxially textured devices which include HTS wires and interconnects, large area or long length ferromagnetic and/or ferroelectric memory devices, large area or long length, flexible light emitting semiconductors, ferroelectric tapes, and electrodes.

  16. Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom

    DOE Patents [OSTI]

    Christen, David K.; He, Qing

    2003-04-29

    The present invention provides a biaxially textured laminate article having a polycrystalline biaxially textured metallic substrate with an electrically conductive oxide layer epitaxially deposited thereon and methods for producing same. In one embodiment a biaxially texture Ni substrate has a layer of LaNiO.sub.3 deposited thereon. An initial layer of electrically conductive oxide buffer is epitaxially deposited using a sputtering technique using a sputtering gas which is an inert or forming gas. A subsequent layer of an electrically conductive oxide layer is then epitaxially deposited onto the initial layer using a sputtering gas comprising oxygen. The present invention will enable the formation of biaxially textured devices which include HTS wires and interconnects, large area or long length ferromagnetic and/or ferroelectric memory devices, large area or long length, flexible light emitting semiconductors, ferroelectric tapes, and electrodes.

  17. Oriented conductive oxide electrodes on SiO2/Si and glass

    DOE Patents [OSTI]

    Jia, Quanxi; Arendt, Paul N.

    2001-01-01

    A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide. Also, a method of forming such thin film structures, including a low temperature deposition of a layer of a biaxially oriented cubic oxide material upon the silicon dioxide surface of a silicon dioxide/silicon substrate is provided.

  18. ALSO: Nuclear Transparency Minirobots Conduct Search & Rescue

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... the role of remote monitoring in ... * Radiation sensor systems; * Motion detectors ... S A N D I A T E C H N O L O G Y Conference unites a world of science and technology to ...

  19. UCSB researchers uncover fundamental limits on optical transparency...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    a wide range of optoelectronic devices, such as solar cells, light-emitting diodes, and LCD touch screens. These materials can conduct electricity while being transparent to...

  20. Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering

    SciTech Connect (OSTI)

    Ma, H. J. Harsan E-mail: ariando@nus.edu.sg; Zeng, S. W.; Annadi, A.; Ariando E-mail: ariando@nus.edu.sg; Huang, Z.; Venkatesan, T.

    2015-08-15

    The two-dimensional electron gas (2DEG) formed at the perovskite oxides heterostructures is of great interest because of its potential applications in oxides electronics and nanoscale multifunctional devices. A canonical example is the 2DEG at the interface between a polar oxide LaAlO{sub 3} (LAO) and non-polar SrTiO{sub 3} (STO). Here, the LAO polar oxide can be regarded as the modulating or doping layer and is expected to define the electronic properties of 2DEG at the LAO/STO interface. However, to practically implement the 2DEG in electronics and device design, desired properties such as tunable 2D carrier density are necessary. Here, we report the tuning of conductivity threshold, carrier density and electronic properties of 2DEG in LAO/STO heterostructures by insertion of a La{sub 0.5}Sr{sub 0.5}TiO{sub 3} (LSTO) layer of varying thicknesses, and thus modulating the amount of polarization of the oxide over layers. Our experimental result shows an enhancement of carrier density up to a value of about five times higher than that observed at the LAO/STO interface. A complete thickness dependent metal-insulator phase diagram is obtained by varying the thickness of LAO and LSTO providing an estimate for the critical thickness needed for the metallic phase. The observations are discussed in terms of electronic reconstruction induced by polar oxides.

  1. Fabrication of transparent ceramics using nanoparticles

    DOE Patents [OSTI]

    Cherepy, Nerine J; Tillotson, Thomas M; Kuntz, Joshua D; Payne, Stephen A

    2012-09-18

    A method of fabrication of a transparent ceramic using nanoparticles synthesized via organic acid complexation-combustion includes providing metal salts, dissolving said metal salts to produce an aqueous salt solution, adding an organic chelating agent to produce a complexed-metal sol, heating said complexed-metal sol to produce a gel, drying said gel to produce a powder, combusting said powder to produce nano-particles, calcining said nano-particles to produce oxide nano-particles, forming said oxide nano-particles into a green body, and sintering said green body to produce the transparent ceramic.

  2. Formation of conductive polymers using nitrosyl ion as an oxidizing agent

    DOE Patents [OSTI]

    Choi, Kyoung-Shin; Jung, Yongju; Singh, Nikhilendra

    2016-06-07

    A method of forming a conductive polymer deposit on a substrate is disclosed. The method may include the steps of preparing a composition comprising monomers of the conductive polymer and a nitrosyl precursor, contacting the substrate with the composition so as to allow formation of nitrosyl ion on the exterior surface of the substrate, and allowing the monomer to polymerize into the conductive polymer, wherein the polymerization is initiated by the nitrosyl ion and the conductive polymer is deposited on the exterior surface of the substrate. The conductive polymer may be polypyrrole.

  3. Transparent conducting Si-codoped Al-doped ZnO thin films prepared by magnetron sputtering using Al-doped ZnO powder targets containing SiC

    SciTech Connect (OSTI)

    Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu

    2009-07-15

    Transparent conducting Al-doped ZnO (AZO) thin films codoped with Si, or Si-codoped AZO (AZO:Si), were prepared by radio-frequency magnetron sputtering using a powder mixture of ZnO, Al{sub 2}O{sub 3}, and SiC as the target; the Si content (Si/[Si+Zn] atomic ratio) was varied from 0 to 1 at. %, but the Al content (Al/[Al+Zn] atomic ratio) was held constant. To investigate the effect of carbon on the electrical properties of AZO:Si thin films prepared using the powder targets containing SiC, the authors also prepared thin films using a mixture of ZnO, Al{sub 2}O{sub 3}, and SiO{sub 2} or SiO powders as the target. They found that when AZO:Si thin films were deposited on glass substrates at about 200 degree sign C, both Al and Si doped into ZnO acted as effective donors and the atomic carbon originating from the sputtered target acted as a reducing agent. As a result, sufficient improvement was obtained in the spatial distribution of resistivity on the substrate surface in AZO:Si thin films prepared with a Si content (Si/[Si+Zn] atomic ratio) of 0.75 at. % using powder targets containing SiC. The improvement in resistivity distribution was mainly attributed to increases in both carrier concentration and Hall mobility at locations on the substrate corresponding to the target erosion region. In addition, the resistivity stability of AZO: Si thin films exposed to air for 30 min at a high temperature was found to improve with increasing Si content.

  4. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    DOE Patents [OSTI]

    Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2015-09-08

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  5. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    DOE Patents [OSTI]

    Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2013-11-26

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  6. Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Annual subcontract report, April 1, 1994--March 31, 1995

    SciTech Connect (OSTI)

    Gordon, R.G.

    1995-10-01

    Transparent and reflecting electrodes are important parts of the structure of amorphous silicon solar cells. We report improved methods for depositing zinc oxide, deposition of tin nitride as a potential reflection-enhancing diffusion barrier between the a-Si and back metal electrodes. Highly conductive and transparent fluorine-doped zinc oxide was successfully produced on small areas by atmospheric pressure CVD from a less hazardous zinc precursor, zinc acetylacetonate. The optical properties measured for tin nitride showed that the back-reflection would be decreased if tin nitride were used instead of zinc oxide as a barrier layer over silver on aluminum. Niobium-doped titanium dioxide was produced with high enough electrical conductivity so that normal voltages and fill factors were obtained for a-Si cells made on it.

  7. Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

    SciTech Connect (OSTI)

    Kashiwagi, Y. Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Nakamoto, M.; Koizumi, A.; Fujiwara, Y.; Takemura, Y.; Murahashi, K.; Ohtsuka, K.; Furuta, S.

    2014-12-01

    Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25?nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850?C for 10?min under atmospheric conditions, the resistivity of the ITO film was 5.2?m??cm. The fabricated LED up to 3?mm square surface emitted red light when the on-voltage was exceeded.

  8. Conductivity and optical band gaps of polyethylene oxide doped with Li{sub 2}SO{sub 4} salt

    SciTech Connect (OSTI)

    Chapi, Sharanappa Raghu, S. Subramanya, K. Archana, K. Mini, V. Devendrappa, H.

    2014-04-24

    The conductivity and optical properties of Li{sub 2}SO{sub 4} doped polyethylene oxide (PEO) films were studied. The polymer electrolyte films are prepared using solution casting technique. The material phase change was confirmed by X-ray diffraction (XRD) technique. Optical absorption study was conducted using UV- Vis. Spectroscopy in the wavelength range 190–1100nm on pure and doped PEO films. The direct and indirect optical band gaps were found decreased from 5.81–4.51eV and 4.84–3.43eV respectively with increasing the Li{sub 2}SO{sub 4}. The conductivity found to increases with increasing the dopant concentration due to strong hopping mechanism at room temperature.

  9. Flexible transparent conductors based on metal nanowire networks

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Guo, Chuan Fei; Ren, Zhifeng

    2015-04-01

    Few conductors are transparent and flexible. Metals have the best electrical conductivity, but they are opaque and stiff in bulk form. However, metals can be transparent and flexible when they are very thin or properly arranged on the nanoscale. This review focuses on the flexible transparent conductors based on percolating networks of metal. Specifically, we discuss the fabrication, the means to improve the electrical conductivity, the large stretchability and its mechanism, and the applications of these metal networks. We also suggest some criteria for evaluating flexible transparent conductors and propose some new research directions in this emerging field.

  10. Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

    DOE Patents [OSTI]

    Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

    2005-10-18

    An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

  11. Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

    DOE Patents [OSTI]

    Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

    2003-09-09

    An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

  12. A Dictionary for Transparency

    SciTech Connect (OSTI)

    Kouzes, Richard T.

    2001-11-15

    There are many terms that are used in association with the U.S. Defense Threat Reduction Agency (DTRA) Transparency Project associated with the Mayak Fissile Materials Storage Facility. This is a collection of proposed definitions of these terms.

  13. 15.02.10 RH Transparent Catalytic - JCAP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transparent Catalytic Nickel Oxide Protecting Films for Photoanodes Sun, K. et al. Stable ... of 15-nm metallic Ni on quartz substrates Reprinted with permission from Sun, K. et al. ...

  14. Multilayered YSZ/GZO films with greatly enhanced ionic conduction for low temperature solid oxide fuel cells

    SciTech Connect (OSTI)

    Li, Bin; Zhang, Jiaming; Kaspar, Tiffany C.; Shutthanandan, V.; Ewing, Rodney C.; Lian, Jie

    2013-01-01

    Strain confinement in heterostructured films significantly affects ionic conductivity of the electrolytes for solid oxide fuel cells based on a multi-layered design strategy. Nearly ideal tensile strain can be achieved by a dedicated manipulation of the lattice mismatch between adjacent layers and fine control of the layer thicknesses to minimize the formation of dislocations and thus to achieve optimized ionic conduction. This strategy was demonstrated by a model system of multilayered 8 mol%Y2O3 stabilized ZrO2 (YSZ) with Gd2Zr2O7 (GZO) films, which were epitaxially grown on Al2O3 (0001) substrates by pulsed laser deposition (PLD) with the {111} planes of YSZ/GZO along the Al2O3 [0 1 ?1 0] direction. The tensile strain (3%) resulting from the lattice mismatch can be confined in individual YSZ layers with the formation of a coherent, dislocation-free interface upon the manipulation of the layer thickness below a critical value, e.g., down to 5 nm. The strained heterostructure displays a two order-of-magnitude increase in oxide-ion conductivity as compared with bulk YSZ, and a high ionic conductivity of 0.01 S cm?1 at 475 C can be achieved, five times greater than that of Gd-doped ceria/zirconia. The approach of strain confinement by fine control of lattice mismatch and layer thickness represents a promising strategy in developing advanced electrolytes enabling the miniaturization of solid-state ionic devices that can be operated at low temperatures below 500 C.

  15. Fabrication of anatase precipitated glass-ceramics possessing high transparency

    SciTech Connect (OSTI)

    Masai, Hirokazu; Toda, Tatsuya; Takahashi, Yoshihiro; Fujiwara, Takumi

    2009-04-13

    Transparent anatase precipitated glass-ceramics were fabricated using ZnO as a component. The particle size of precipitated anatase is several nanometers enough to possess high transparency. The preparation of the Bi-free transparent TiO{sub 2} glass-ceramic was attained by substitution of two different kinds of oxides for bismuth oxide. It is also noteworthy that we have demonstrated the crystallization of metastable anatase in the glass-ceramics as a main phase. The present bulk anatase glass-ceramics will open up an application field for a TiO{sub 2}-containing photocatalyst.

  16. Nanocarbon-copper thin film as transparent electrode

    SciTech Connect (OSTI)

    Isaacs, R. A.; Zhu, H.; Preston, Colin; LeMieux, M.; Jaim, H. M. Iftekhar; Hu, L. Salamanca-Riba, L. G.; Mansour, A.; Zavalij, P. Y.; Rabin, O.

    2015-05-11

    Researchers seeking to enhance the properties of metals have long pursued incorporating carbon in the metallic host lattice in order to combine the strongly bonded electrons in the metal lattice that yield high ampacity and the free electrons available in carbon nanostructures that give rise to high conductivity. The incorporation of carbon nanostructures into the copper lattice has the potential to improve the current density of copper to meet the ever-increasing demands of nanoelectronic devices. We report on the structure and properties of carbon incorporated in concentrations up to 5 wt. % (∼22 at. %) into the crystal structure of copper. Carbon nanoparticles of 5 nm–200 nm in diameter in an interconnecting carbon matrix are formed within the bulk Cu samples. The carbon does not phase separate after subsequent melting and re-solidification despite the absence of a predicted solid solution at such concentrations in the C-Cu binary phase diagram. This material, so-called, Cu covetic, makes deposition of Cu films containing carbon with similar microstructure to the metal possible. Copper covetic films exhibit greater transparency, higher conductivity, and resistance to oxidation than pure copper films of the same thickness, making them a suitable choice for transparent conductors.

  17. Transparent conductor-Si pillars heterojunction photodetector

    SciTech Connect (OSTI)

    Yun, Ju-Hyung; Kim, Joondong; Park, Yun Chang

    2014-08-14

    We report a high-performing heterojunction photodetector by enhanced surface effects. Periodically, patterned Si substrates were used to enlarge the photo-reactive regions and yield proportionally improved photo-responses. An optically transparent indium-tin-oxide (ITO) was deposited on a Si substrate and spontaneously formed an ITO/Si heterojunction. Due to an electrical conductive ITO film, ITO/Si heterojunction device can be operated at zero-bias, which effectively suppresses the dark current, resulting in better performances than those by a positive or a negative bias operation. This zero-bias operating heterojunction device exhibits a short response time (? 22.5?ms) due to the physical reaction to the incident light. We revealed that the location of the space charge region (SCR) is crucial for a specific photon-wavelength response. The SCR space has the highest collection efficiency of the photo-generated carriers. The photo-response can be maximized when we design the photodetector by superposing the SCR space over a corresponding photon-absorption length. The surface enhanced Si pillar devices significantly improved the photo-responses ratios from that of a planar Si device. According to this design scheme, a high photo-response ratio of 5560% was achieved at a wavelength of 600?nm. This surfaced-enhanced heterojunction design scheme would be a promising approach for various photoelectric applications.

  18. The role of electronic and ionic conductivities in the rate performance of tunnel structured manganese oxides in Li-ion batteries

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Byles, B. W.; Palapati, N. K. R.; Subramanian, A.; Pomerantseva, E.

    2016-04-29

    Single nanowires of two manganese oxide polymorphs (α-MnO2 and todorokite manganese oxide), which display a controlled size variation in terms of their square structural tunnels, were isolated onto nanofabricated platforms using dielectrophoresis. This platform allowed for the measurement of the electronic conductivity of these manganese oxides, which was found to be higher in α-MnO2 as compared to that of the todorokite phase by a factor of similar to 46. Despite this observation of substantially higher electronic conductivity in α-MnO2, the todorokite manganese oxide exhibited better electrochemical rate performance as a Li-ion battery cathode. The relationship between this electrochemical performance, themore » electronic conductivities of the manganese oxides, and their reported ionic conductivities is discussed for the first time, clearly revealing that the rate performance of these materials is limited by their Li+ diffusivity, and not by their electronic conductivity. This result reveals important new insights relevant for improving the power density of manganese oxides, which have shown promise as a low-cost, abundant, and safe alternative for next-generation cathode materials. Moreover, the presented experimental approach is suitable for assessing a broader family of one-dimensional electrode active materials (in terms of their electronic and ionic conductivities) for both Li-ion batteries and for electrochemical systems utilizing charge-carrying ions beyond Li+.« less

  19. Heteroepitaxial growth of highly conductive metal oxide RuO{sub 2} thin films by pulsed laser deposition

    SciTech Connect (OSTI)

    Jia, Q.X.; Wu, X.D.; Foltyn, S.R.; Findikoglu, A.T.; Tiwari, P.; Zheng, J.P.; Jow, T.R.

    1995-09-18

    Highly conductive ruthenium oxide (RuO{sub 2}) has been epitaxially grown on LaAlO{sub 3} substrates by pulsed laser deposition. The RuO{sub 2} film is ({ital h}00) oriented normal to the substrate surface. The heteroepitaxial growth of RuO{sub 2} on LaAlO{sub 3} is demonstrated by the strong in-plane orientation of thin films with respect to the major axes of the substrate. High crystallinity of RuO{sub 2} thin films is also determined from Rutherford backscattering channeling measurements. Electrical measurements on the RuO{sub 2} thin films demonstrate a quite low room-temperature resistivity of 35{plus_minus}2 {mu}{Omega} cm at deposition temperatures of above 500 {degree}C. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  20. Use of impure inert gases in the controlled heating and cooling of mixed conducting metal oxide materials

    DOE Patents [OSTI]

    Carolan, Michael Francis; Bernhart, John Charles

    2012-08-21

    Method for processing an article comprising mixed conducting metal oxide material. The method comprises contacting the article with an oxygen-containing gas and either reducing the temperature of the oxygen-containing gas during a cooling period or increasing the temperature of the oxygen-containing gas during a heating period; during the cooling period, reducing the oxygen activity in the oxygen-containing gas during at least a portion of the cooling period and increasing the rate at which the temperature of the oxygen-containing gas is reduced during at least a portion of the cooling period; and during the heating period, increasing the oxygen activity in the oxygen-containing gas during at least a portion of the heating period and decreasing the rate at which the temperature of the oxygen-containing gas is increased during at least a portion of the heating period.

  1. Transparent conductor-embedding nanolens for Si solar cells

    SciTech Connect (OSTI)

    Kim, Joondong E-mail: junsin@skku.edu Kumar, Melvin David; Yun, Ju-Hyung; Kim, Hongsik; Park, Hyeong-Ho; Lee, Eunsongyi; Kim, Dong-wook; Kim, Hyunyub; Kim, Mingeon; Yi, Junsin E-mail: junsin@skku.edu; Jeong, Chaehwan E-mail: junsin@skku.edu

    2015-04-13

    We present a large-scale applicable nanolens-embedding solar cell. An electrically conductive and optically transparent indium-tin-oxide (ITO) thin film was coated on a Si substrate. After then, periodically patterned ITO nanodome-arrays were formed on the ITO film by using a nano-imprint method. This structure is effective to reduce the incident light reflection for broad wavelengths and also efficient to drive the incident photons into a light-absorbing Si substrate. There exist two electric fields. One is by a p/n junction and the other is by the light absorption into Si. We designed nanolens structures to overlap two electric fields and demonstrate highly improved solar cell performances of current and voltage values from a planar structure.

  2. Chemical vapor deposition of fluorine-doped zinc oxide

    DOE Patents [OSTI]

    Gordon, Roy G.; Kramer, Keith; Liang, Haifan

    2000-06-06

    Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

  3. Spatial dependence of polycrystalline FTOs conductance analyzed by conductive atomic force microscope (C-AFM)

    SciTech Connect (OSTI)

    Peixoto, Alexandre Pessoa; Costa, J. C. da

    2014-05-15

    Fluorine-doped Tin oxide (FTO) is a highly transparent, electrically conductive polycrystalline material frequently used as an electrode in organic solar cells and optical-electronic devices [12]. In this work a spatial analysis of the conductive behavior of FTO was carried out by Conductive-mode Atomic Force Microscopy (C-AFM). Rare highly oriented grains sample give us an opportunity to analyze the top portion of polycrystalline FTO and compare with the border one. It is shown that the current flow essentially takes place through the polycrystalline edge at grain boundaries.

  4. Quantification and impact of nonparabolicity of the conduction band of indium tin oxide on its plasmonic properties

    SciTech Connect (OSTI)

    Liu, Xiaoge; Park, Junghyun; Kang, Ju-Hyung; Yuan, Hongtao; Cui, Yi; Hwang, Harold Y.; Brongersma, Mark L.

    2014-11-03

    Doped indium tin oxide (ITO) behaves as a Drude metal with a plasma frequency that is controlled by its free carrier density. In this work, we systematically tune this frequency across the mid-infrared range by annealing treatments in a reducing environment that produce high electron concentrations (∼10{sup 21 }cm{sup −3}). The changes in ITO's optical properties that result from the changes in carrier density are measured by attenuated total reflection measurements. These optical frequency measurements are complemented by Hall measurements to obtain a comprehensive picture of the Drude response of the ITO films. It was found that a complete description of the optical properties at very high carrier densities needs to account for the nonparabolicity of the conduction band of ITO and a reduced carrier mobility. More specifically, an increase in carrier concentration from 6.2 × 10{sup 19 }cm{sup −3} to 1.4 × 10{sup 21 }cm{sup −3} comes with a change of the effective electron mass from 0.35 m{sub 0} to 0.53 m{sub 0} and a decrease in the optical frequency mobility from about 20 cm{sup 2} V{sup −1} s{sup −1} to 9 cm{sup 2} V{sup −1} s{sup −1}.

  5. Application of Single Wall Carbon Nanotubes as Transparent Electrodes in Cu(In,Ga)Se2-Based Solar Cells: Preprint

    SciTech Connect (OSTI)

    Contreras, M.; Barnes, T.; van de Lagemaat, J.; Rumbles, G.; Coutts, T. J.; Weeks, C.; Glatkowski, P.; Levitsky, I.; Peltola, J.

    2006-05-01

    We present a new thin-film solar cell structure in which the traditional transparent conductive oxide electrode (ZnO) is replaced by a transparent conductive coating consisting of a network of bundled single-wall carbon nanotubes. Optical transmission properties of these coatings are presented in relation to their electrical properties (sheet resistance), along with preliminary solar cell results from devices made using CuIn1-xGaxSe2 thin-film absorber materials. Achieving an energy conversion efficiency of >12% and a quantum efficiency of {approx}80% demonstrate the feasibility of the concept. A discussion of the device structures will be presented considering the physical properties of the new electrodes comparing current-voltage results from the new solar cell structure and those from standard ZnO/CdS/Cu(In,Ga)Se2/Mo solar cells.

  6. Transparent ceramics and methods of preparation thereof

    DOE Patents [OSTI]

    Hollingsworth, Joel P. (Oakland, CA); Kuntz, Joshua D. (Livermore, CA); Seeley, Zachary M. (Pullman, WA); Soules, Thomas F. (Livermore, CA)

    2011-10-18

    According to one embodiment, a method for forming a transparent ceramic preform includes forming a suspension of oxide particles in a solvent, adding the suspension to a mold of a desired shape, and uniformly curing the suspension in the mold for forming a preform. The suspension includes a dispersant but does not include a gelling agent. In another embodiment, a method includes creating a mixture without a gelling agent, the mixture including: inorganic particles, a solvent, and a dispersant. The inorganic particles have a mean diameter of less than about 2000 nm. The method also includes agitating the mixture, adding the mixture to a mold, and curing the mixture in the mold at a temperature of less than about 80.degree. C. for forming a preform. Other methods for forming a transparent ceramic preform are also described according to several embodiments.

  7. Aerogel: a transparent insulator for solar applications

    SciTech Connect (OSTI)

    Hunt, A.J.; Russo, R.E.; Tewari, P.H.; Lofftus, K.D.

    1985-06-01

    Aerogel is a transparent, low density, insulating material suitable for a variety of solar applications. Significant energy savings can be realized by using aerogel for a window glazing material. Other possible applications include solar collector covers, transparent insulating jackets for direct gain passive solar devices, and situations that require both transparency and good insulation. Because silica aerogel has a low density (2 to 10% solid), it has a thermal conductivity as low as 0.014 W/m/sup 0/K without evacuation, and if evacuated, lower than 0.006 W/m/sup 0/K. It provides a clear view with only slight coloring due to its weak and nearly isotropic scattering of light. This paper describes significant progress made in the past year at our laboratory in the development of aerogel. We have improved the transparency, developed new preparation methods using less toxic materials, and initiated successful experiments in drying alcogels at near ambient temperature. Optical transmission, light scattering, and electron microscopy data show that CO/sub 2/ supercritical drying of alcogels produces aerogels similar in quality to those produced by high temperature supercritical drying. These advances make the commercial production of aerogel much more feasible.

  8. Correlation effects in nuclear transparency

    SciTech Connect (OSTI)

    Frankfurt, L. L.; Moniz, Ernest J.; Sargsyan, M. M.; Strikman, M. I.

    1995-06-01

    The Glauber approximation is used to calculate the contribution of nucleon correlations in high-energy A(e,e'N) reactions. When the excitation energy of the residual nucleus is small, the increase of the nuclear transparency due to correlations between the struck nucleon and the other nucleons is mostly compensated by a decrease of the transparency due to the correlations between nondetected nucleons. We derive Glauber model predictions for nuclear transparency for the differential cross section when nuclear shell level excitations are measured. The role of correlations in color transparency is briefly discussed.

  9. Final Technical Report CONDUCTIVE COATINGS FOR SOLAR CELLS USING CARBON NANOTUBES

    SciTech Connect (OSTI)

    Paul J Glatkowski; Jorma Peltola; Christopher Weeks; Mike Trottier; David Britz

    2007-09-30

    US Department of Energy (DOE) awarded a grant for Eikos Inc. to investigate the feasibility of developing and utilizing Transparent Conducting Coatings (TCCs) based on carbon nanotubes (CNT) for solar cell applications. Conventional solar cells today employ metal oxide based TCCs with both Electrical Resistivity (R) and Optical Transparency (T), commonly referred to as optoelectronic (RT) performance significantly higher than with those possible with CNT based TCCs available today. Transparent metal oxide based coatings are also inherently brittle requiring high temperature in vacuum processing and are thus expensive to manufacture. One such material is indium tin oxide (ITO). Global demand for indium has recently increased rapidly while supply has diminished causing substantial spikes in raw material cost and availability. In contrast, the raw material, carbon, needed for CNT fabrication is abundantly available. Transparent Conducting Coatings based on CNTs can overcome not only cost and availability constraints while also offering the ability to be applied by existing, low cost process technologies under ambient conditions. Processes thus can readily be designed both for rigid and flexible PV technology platforms based on mature spray or dip coatings for silicon based solar cells and continuous roll to roll coating processes for polymer solar applications.

  10. A new architecture as transparent electrodes for solar and IR applications based on photonic structures via soft lithography

    SciTech Connect (OSTI)

    Kuang, Ping

    2011-05-15

    Transparent conducting electrodes with the combination of high optical transmission and good electrical conductivity are essential for solar energy harvesting and electric lighting devices. Currently, indium tin oxide (ITO) is used because ITO offers relatively high transparency (>80%) to visible light and low sheet resistance (R{sub s} = 10 ohms/square ({Omega}#2;/?)) for electrical conduction. However, ITO is costly due to limited indium reserves, and it is brittle. These disadvantages have motivated the search for other conducting electrodes with similar or better properties. There has been research on a variety of electrode structures involving carbon nanotube networks, graphene films, nanowire and nanopatterned meshes and grids. Due to their novel characteristics in light manipulation and collection, photonic crystal structures show promise for further improvement. Here, we report on a new architecture consisting of nanoscale high aspect ratio metallic photonic structures as transparent electrodes fabricated via a combination of processes. For (Au) and silver (Ag) structures, the visible light transmission can reach as high as 80%, and the sheet resistance of the structure can be as low as 3.2{Omega}#2;/?. The optical transparency of the high aspect ratio metal structures at visible wavelength range is comparable to that of ITO glass, while their sheet resistance is more than 3 times lower, which indicates a much higher electrical conductivity of the metal structures. Furthermore, the high aspect ratio metal structures have very high infrared (IR) reflection (90%) for the transverse magnetic (TM) mode, which can lead to the development of fabrication of metallic structures as IR filters for heat control applications. Investigations of interdigitated structures based on the high aspect ratio metal electrodes are ongoing to study the feasibility in smart window applications in light transmission modulation.

  11. Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Tomasi, Andrea; Sahli, Florent; Seif, Johannes Peter; Fanni, Lorenzo; de Nicolas Agut, Silvia Martin; Geissbuhler, Jonas; Paviet-Salomon, Bertrand; Nicolay, Sylvain; Barraud, Loris; Niesen, Bjoern; et al

    2015-10-26

    Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solarmore » cells. As a result, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.« less

  12. Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation

    SciTech Connect (OSTI)

    Tomasi, Andrea; Sahli, Florent; Seif, Johannes Peter; Fanni, Lorenzo; de Nicolas Agut, Silvia Martin; Geissbuhler, Jonas; Paviet-Salomon, Bertrand; Nicolay, Sylvain; Barraud, Loris; Niesen, Bjoern; De Wolf, Stefaan; Ballif, Christophe

    2015-10-26

    Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solar cells. As a result, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.

  13. Oxide

    SciTech Connect (OSTI)

    2014-07-15

    Oxide is a modular framework for feature extraction and analysis of executable files. Oxide is useful in a variety of reverse engineering and categorization tasks relating to executable content.

  14. Air transparent soundproof window

    SciTech Connect (OSTI)

    Kim, Sang-Hoon; Lee, Seong-Hyun

    2014-11-15

    A soundproof window or wall which is transparent to airflow is presented. The design is based on two wave theories: the theory of diffraction and the theory of acoustic metamaterials. It consists of a three-dimensional array of strong diffraction-type resonators with many holes centered on each individual resonator. The negative effective bulk modulus of the resonators produces evanescent wave, and at the same time the air holes with subwavelength diameter existed on the surfaces of the window for macroscopic air ventilation. The acoustic performance levels of two soundproof windows with air holes of 20mm and 50mm diameters were measured. The sound level was reduced by about 30 - 35dB in the frequency range of 400 - 5,000Hz with the 20mm window, and by about 20 - 35dB in the frequency range of 700 - 2,200Hz with the 50mm window. Multi stop-band was created by the multi-layers of the window. The attenuation length or the thickness of the window was limited by background noise. The effectiveness of the soundproof window with airflow was demonstrated by a real installation.

  15. Measuring the Impact of Benchmarking & Transparency - Methodologies...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Measuring the Impact of Benchmarking & Transparency - Methodologies and the NYC Example Measuring the Impact of Benchmarking & Transparency - Methodologies and the NYC Example ...

  16. Building Energy Transparency Report | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Transparency Report Building Energy Transparency Report This report discusses best practices in implementing benchmarking policies. It includes policy profiles from several cities ...

  17. Surface-Plasmon Enhanced Transparent Electrodes in Organic Photovoltaics

    SciTech Connect (OSTI)

    Reilly III, T. H.; van de Lagemaat, J.; Tenent, R. C.; Morfa, A. J.; Rowlen, K. L.

    2008-01-01

    Random silver nanohole films were created through colloidal lithography techniques and metal vapor deposition. The transparent electrodes were characterized by uv-visible spectroscopy and incorporated into an organic solar cell. The test cells were evaluated for solar power-conversion efficiency and incident photon-to-current conversion efficiency. The incident photon-to-current conversion efficiency spectra displayed evidence that a nanohole film with 92 nm diameter holes induces surface-plasmon-enhanced photoconversion. The nanohole silver films demonstrate a promising route to removing the indium tin oxide transparent electrode that is ubiquitous in organic optoelectronics.

  18. Opportunities for Improving Photovoltaic Performance with Better Transparent Contacts

    SciTech Connect (OSTI)

    Ginley, David S.; Perkins, John D.

    2015-06-14

    NREL and DOE recently held a workshop to assess the challenges, opportunities and potential impacts for improved transparent contacts (TCs) to positively impact current and emerging photovoltaic conversion technologies. Here, we report on the workshop outcomes based on the collective input and participation from industry, academia, national laboratories and DOE. A primary conclusion is that new emerging materials can have significant impacts on the overall performance, reliability and cost for commercial scale PV. One key observation is that TC's should no longer be thought of as a single-layer single-purpose material but as an integrated contact layer stack that includes a charge selective interface layer, a conducting layer and sometimes layers for reliability or light management. In addition, the long standing goal of developing of high performance atmospheric-pressure-processed TCs has finally been met by the rapidly improving Ag nanowire based composites with better than ITO performance from an all ink based process. Even the more conventional metal oxide materials are improving rapidly by introducing solution processed buffer layers, and even conductor layers. This rapid evolution has opened the way to high-throughput low-cost TC processing. Key desired metrics for TCs and approaches to achieving them are discussed.

  19. THIN FILM ELECTRONIC DEVICES WITH CONDUCTIVE AND TRANSPARENT GAS AND

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    MOISTURE PERMEATION BARRIERS - Energy Innovation Portal 065358 Site Map Printable Version Share this resource About Search Categories (15) Advanced Materials Biomass and Biofuels Building Energy Efficiency Electricity Transmission Energy Analysis Energy Storage Geothermal Hydrogen and Fuel Cell Hydropower, Wave and Tidal Industrial Technologies Solar Photovoltaic Solar Thermal Startup America Vehicles and Fuels Wind Energy Partners (27) Visual Patent Search Success Stories Return to Search

  20. Thin Film Electronic Devices with Conductive and Transparent Gas and

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Moisture Permeation Barriers - Energy Innovation Portal 68436 Site Map Printable Version Share this resource About Search Categories (15) Advanced Materials Biomass and Biofuels Building Energy Efficiency Electricity Transmission Energy Analysis Energy Storage Geothermal Hydrogen and Fuel Cell Hydropower, Wave and Tidal Industrial Technologies Solar Photovoltaic Solar Thermal Startup America Vehicles and Fuels Wind Energy Partners (27) Visual Patent Search Success Stories Return to Search

  1. Thin film electronic devices with conductive and transparent gas and

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    moisture permeation barriers - Energy Innovation Portal 93,661 Site Map Printable Version Share this resource About Search Categories (15) Advanced Materials Biomass and Biofuels Building Energy Efficiency Electricity Transmission Energy Analysis Energy Storage Geothermal Hydrogen and Fuel Cell Hydropower, Wave and Tidal Industrial Technologies Solar Photovoltaic Solar Thermal Startup America Vehicles and Fuels Wind Energy Partners (27) Visual Patent Search Success Stories Find More Like

  2. Large area controlled assembly of transparent conductive networks

    SciTech Connect (OSTI)

    Ivanov, Ilia N.; Simpson, John T.

    2015-09-29

    A method of preparing a network comprises disposing a solution comprising particulate materials in a solvent onto a superhydrophobic surface comprising a plurality of superhydrophobic features and interfacial areas between the superhydrophobic features. The plurality of superhydrophobic features has a water contact angle of at least about 150.degree.. The method of preparing the network also comprises removing the solvent from the solution of the particulate materials, and forming a network of the particulate materials in the interfacial areas, the particulate materials receding to the interfacial areas as the solvent is removed.

  3. Thin film electronic devices with conductive and transparent gas and

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    moisture permeation barriers - Energy Innovation Portal 09,994 Site Map Printable Version Share this resource About Search Categories (15) Advanced Materials Biomass and Biofuels Building Energy Efficiency Electricity Transmission Energy Analysis Energy Storage Geothermal Hydrogen and Fuel Cell Hydropower, Wave and Tidal Industrial Technologies Solar Photovoltaic Solar Thermal Startup America Vehicles and Fuels Wind Energy Partners (27) Visual Patent Search Success Stories Find More Like

  4. Transparent ceramics and methods of preparation thereof

    DOE Patents [OSTI]

    Hollingsworth, Joel P.; Kuntz, Joshua D.; Seeley, Zachary M.; Soules, Thomas F.

    2012-12-25

    A method for forming a transparent ceramic preform in one embodiment includes forming a suspension of oxide particles in a solvent, wherein the suspension includes a dispersant, with the proviso that the suspension does not include a gelling agent; and uniformly curing the suspension for forming a preform of gelled suspension. A method according to another embodiment includes creating a mixture of inorganic particles, a solvent and a dispersant, the inorganic particles having a mean diameter of less than about 2000 nm; agitating the mixture; adding the mixture to a mold; and curing the mixture in the mold for gelling the mixture, with the proviso that no gelling agent is added to the mixture.

  5. Compound transparent ceramics and methods of preparation thereof

    DOE Patents [OSTI]

    Hollingsworth, Joel P.; Kuntz, Joshua D.; Soules, Thomas F.; Landingham, Richard L.

    2012-12-11

    According to one embodiment, a method for forming a composite transparent ceramic preform includes forming a first suspension of oxide particles in a first solvent which includes a first dispersant but does not include a gelling agent, adding the first suspension to a first mold of a desired shape, and uniformly curing the first suspension in the first mold until stable. The method also includes forming a second suspension of oxide particles in a second solvent which includes a second dispersant but does not include a gelling agent, adding the second suspension to the stable first suspension in a second mold of a desired shape encompassing the first suspension and the second suspension, and uniformly curing the second suspension in the second mold until stable. Other methods for forming a composite transparent ceramic preform are also described according to several other embodiments. Structures are also disclosed.

  6. Preparation of transparent conductors ferroelectric memory materials and ferrites

    DOE Patents [OSTI]

    Bhattacharya, R.N.; Ginley, D.S.

    1998-07-28

    A process is described for the preparation by electrodeposition of metal oxide film and powder compounds for ferroelectric memory materials and ferrites wherein the metal oxide includes a plurality of metals. The process comprises providing an electrodeposition bath, providing soluble salts of the metals to this bath, electrically energizing the bath to thereby cause formation of a recoverable film of metal on the electrode, recovering the resultant film as a film or a powder, and recovering powder formed on the floor of the bath. The films and powders so produced are subsequently annealed to thereby produce metal oxide for use in electronic applications. The process can be employed to produce metal-doped metal oxide film and powder compounds for transparent conductors. The process for preparation of these metal-doped metal oxides follows that described above.

  7. Preparation of transparent conductors ferroelectric memory materials and ferrites

    DOE Patents [OSTI]

    Bhattacharya, Raghu Nath; Ginley, David S.

    1998-01-01

    A process for the preparation by electrodeposition of metal oxide film and powder compounds for ferroelectric memory materials and ferrites wherein the metal oxide includes a plurality of metals. The process comprises providing an electrodeposition bath, providing soluble salts of the metals to this bath, electrically energizing the bath to thereby cause formation of a recoverable film of metal on the electrode, recovering the resultant film as a film or a powder, and recovering powder formed on the floor of the bath. The films and powders so produced are subsequently annealed to thereby produce metal oxide for use in electronic applications. The process can be employed to produce metal-doped metal oxide film and powder compounds for transparent conductors. The process for preparation of these metal-doped metal oxides follows that described above.

  8. Transparent self-cleaning dust shield

    DOE Patents [OSTI]

    Mazumder, Malay K.; Sims, Robert A.; Wilson, James D.

    2005-06-28

    A transparent electromagnetic shield to protect solar panels and the like from dust deposition. The shield is a panel of clear non-conducting (dielectric) material with embedded parallel electrodes. The panel is coated with a semiconducting film. Desirably the electrodes are transparent. The electrodes are connected to a single-phase AC signal or to a multi-phase AC signal that produces a travelling electromagnetic wave. The electromagnetic field produced by the electrodes lifts dust particles away from the shield and repels charged particles. Deposited dust particles are removed when the electrodes are activated, regardless of the resistivity of the dust. Electrostatic charges on the panel are discharged by the semiconducting film. When used in conjunction with photovoltaic cells, the power for the device may be obtained from the cells themselves. For other surfaces, such as windshields, optical windows and the like, the power must be derived from an external source. One embodiment of the invention employs monitoring and detection devices to determine when the level of obscuration of the screen by dust has reached a threshold level requiring activation of the dust removal feature.

  9. Transparent electrode for optical switch

    DOE Patents [OSTI]

    Goldhar, J.; Henesian, M.A.

    1984-10-19

    The invention relates generally to optical switches and techniques for applying a voltage to an electro-optical crystal, and more particularly, to transparent electodes for an optical switch. System architectures for very large inertial confinement fusion (ICF) lasers require active optical elements with apertures on the order of one meter. Large aperture optical switches are needed for isolation of stages, switch-out from regenerative amplifier cavities and protection from target retroreflections.

  10. Layed Perovskite PRBA0.5SR0.5CO205 as High Performance Cathode for Solid Oxide Fuels Using Photon Conducting Electrolyte

    SciTech Connect (OSTI)

    Brinkman, K.

    2010-05-05

    The layered perovskite PrBa{sub 0.5}Sr{sub 0.5}Co{sub 2}O{sub 5+{delta}} (PBSC) was investigated as a cathode material for a solid oxide fuel cell using a proton-conducting electrolyte based on BaCe{sub 0.7}Y{sub 0.2}Zr{sub 0.1}O{sub 3-{delta}} (BCYZ). The sintering conditions for the PBSC-BCYZ composite cathode were optimized resulting in the lowest area-specific resistance and apparent activation energy obtained with the cathode sintered at 1200 C for 2h. The maximum power densities of the PBSC-BCYZ/BZCY/NiO-BCYZ cell were 0.179, 0.274, 0.395, and 0.522 Wcm{sup -2} at 550, 600, 650, and 700 C, respectively with a 15{micro}m thick electrolyte. A relatively low cell interfacial polarization resistance of 0.132 {Omega}cm{sup 2} at 700 C indicated that the PBSC-BCYZ could be a good cathode candidate for intermediate temperature SOFCs with proton-conducting electrolyte.

  11. Tunable morphologies of indium tin oxide nanostructures using nanocellulose templates

    SciTech Connect (OSTI)

    Aytug, Tolga; Meyer, III, Harry M.; Ozcan, Soydan; Lu, Yuan; Poole, II, Joseph E.

    2015-01-01

    Metal oxide nanostructures have emerged as an important family of materials for various device applications. The performance is highly dependent on the morphology of the metal oxide nanostructures. Here we report a completely green approach to prepare indium tin oxide (ITO) nanoparticles using only water and cellulose nanofibril (CNF) in addition to the ITO precursor. Surface hydroxyl groups of the CNFs allow for efficient conjugation of ITO precursors (e.g., metal ions) in aqueous solution. The resulting CNF film allows for controllable spatial arrangement of metal oxide precursors, which results in tunable particle morphology (e.g., nanowires, nanospheres, and octahedral nanoparticles). These ITO nanoparticles can also form conductive and transparent ITO films. This study opens a new perspective on developing metal oxide nanostructures.

  12. Tunable morphologies of indium tin oxide nanostructures using nanocellulose templates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Aytug, Tolga; Meyer, III, Harry M.; Ozcan, Soydan; Lu, Yuan; Poole, II, Joseph E.

    2015-01-01

    Metal oxide nanostructures have emerged as an important family of materials for various device applications. The performance is highly dependent on the morphology of the metal oxide nanostructures. Here we report a completely green approach to prepare indium tin oxide (ITO) nanoparticles using only water and cellulose nanofibril (CNF) in addition to the ITO precursor. Surface hydroxyl groups of the CNFs allow for efficient conjugation of ITO precursors (e.g., metal ions) in aqueous solution. The resulting CNF film allows for controllable spatial arrangement of metal oxide precursors, which results in tunable particle morphology (e.g., nanowires, nanospheres, and octahedral nanoparticles). Thesemore » ITO nanoparticles can also form conductive and transparent ITO films. This study opens a new perspective on developing metal oxide nanostructures.« less

  13. Transparent communications permit unmanned operations

    SciTech Connect (OSTI)

    1995-07-01

    Not-normally-manned platforms are not a new development. However, their use in harsher environments has until recently, been limited. Development of reliable communications networks capable of handling the large amounts of data required for process control in real time with distributed control systems (DCSs) has been a key factor in making the concept viable for harsher, more remote environments. The article below examines the transparent communications network and DCS installed on Pickerill field, offshore UK, by Fisher-Rosemount Systems and its operational parameters. Pickerill field, some 50 mi off the Lincolnshire coast, comprises two small unmanned platforms producing gas under remote control from Arco`s operations base at Great Yarmouth about 60 mi south. Reliable communication is required both with the two platforms offshore and with Conoco`s gas processing operators at Theddlethorpe. Fundamental to project success was the ability of the process control system to provide entirely secure and transparent communication with equipment offshore and thus enable operators at Great Yarmouth to interact with the process as if it were local to their control center.

  14. Scientists produce transparent, light-harvesting material

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transparent, light-harvesting material Scientists produce transparent, light-harvesting material The material could be used in development of transparent solar panels. November 3, 2010 Los Alamos National Laboratory sits on top of a once-remote mesa in northern New Mexico with the Jemez mountains as a backdrop to research and innovation covering multi-disciplines from bioscience, sustainable energy sources, to plasma physics and new materials. Los Alamos National Laboratory sits on top of a

  15. Electrode with transparent series resistance for uniform switching of optical modulation devices

    DOE Patents [OSTI]

    Tench, D. Morgan; Cunningham, Michael A.; Kobrin, Paul H.

    2008-01-08

    Switching uniformity of an optical modulation device for controlling the propagation of electromagnetic radiation is improved by use of an electrode comprising an electrically resistive layer that is transparent to the radiation. The resistive layer is preferably an innerlayer of a wide-bandgap oxide sandwiched between layers of indium tin oxide or another transparent conductor, and may be of uniform thickness, or may be graded so as to provide further improvement in the switching uniformity. The electrode may be used with electrochromic and reversible electrochemical mirror (REM) smart window devices, as well as display devices based on various technologies.

  16. Scientists produce transparent, light-harvesting material

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The material could be used in development of transparent solar panels. November 3, 2010 Los ... "Potentially, with future refinement of this technology, windows in a home or office ...

  17. Optically transparent and environmentally durable superhydrophobic...

    Office of Scientific and Technical Information (OSTI)

    nanoparticles Citation Details In-Document Search Title: Optically transparent and environmentally durable superhydrophobic coating based on functionalized SiO2 nanoparticles ...

  18. Enhanced durability transparent superhydrophobic anti-soiling...

    Office of Scientific and Technical Information (OSTI)

    Title: Enhanced durability transparent superhydrophobic anti-soiling coatings for CSP applications Authors: Polyzos, Georgios 1 ; Schaeffer, Daniel A 1 ; Smith, Barton Barton ...

  19. Transparency: it's not just for windows

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transparency: it's not just for windows Los Alamos National Laboratory's database of environmental monitoring data is now directly viewable by the public. March 20, 2012...

  20. Atomically Bonded Transparent Superhydrophobic Coatings

    SciTech Connect (OSTI)

    Aytug, Tolga

    2015-08-01

    Maintaining clarity and avoiding the accumulation of water and dirt on optically transparent surfaces such as US military vehicle windshields, viewports, periscope optical head windows, and electronic equipment cover glasses are critical to providing a high level of visibility, improved survivability, and much-needed safety for warfighters in the field. Through a combination of physical vapor deposition techniques and the exploitation of metastable phase separation in low-alkali borosilicate, a novel technology was developed for the fabrication of optically transparent, porous nanostructured silica thin film coatings that are strongly bonded to glass platforms. The nanotextured films, initially structurally superhydrophilic, exhibit superior superhydrophobicity, hence antisoiling ability, following a simple but robust modification in surface chemistry. The surfaces yield water droplet contact angles as high as 172°. Moreover, the nanostructured nature of these coatings provides increased light scattering in the UV regime and reduced reflectivity (i.e., enhanced transmission) over a broad range of the visible spectrum. In addition to these functionalities, the coatings exhibit superior mechanical resistance to abrasion and are thermally stable to temperatures approaching 500°C. The overall process technology relies on industry standard equipment and inherently scalable manufacturing processes and demands only nontoxic, naturally abundant, and inexpensive base materials. Such coatings, applied to the optical components of current and future combat equipment and military vehicles will provide a significant strategic advantage for warfighters. The inherent self-cleaning properties of such superhydrophobic coatings will also mitigate biofouling of optical windows exposed to high-humidity conditions and can help decrease repair/replacement costs, reduce maintenance, and increase readiness by limiting equipment downtime.

  1. Temperature dependence of structural parameters in oxide-ion-conducting Nd{sub 9.33}(SiO{sub 4}){sub 6}O{sub 2}: single crystal X-ray studies from 295 to 900K

    SciTech Connect (OSTI)

    Okudera, Hiroki . E-mail: h.okudera@fkf.mpg.de; Yoshiasa, Akira; Masubuchi, Yuuji; Higuchi, Mikio; Kikkawa, Shinichi

    2004-12-01

    Crystallographic space group, structural parameters and their thermal changes in oxide-ion-conducting Nd{sub 9.33}(SiO{sub 4}){sub 6}O{sub 2} were investigated using high-temperature single-crystal X-ray diffraction experiments in the temperature range of 295=oxide ions which belong to SiO{sub 4} tetrahedron indicated high rigidity of the tetrahedron in the structure, indicating that they form sp3 hybrid orbitals and the ligand oxygens do not take part in oxide-ion conductivity. Virtually full occupation of the 6h Nd site and highly anisotropic displacements of oxide ion inside the hexagonal channel were maintained over the temperature range examined. This result confirms that oxide-ion transport inside the hexagonal channel is the dominant process of conduction in the title compound.

  2. Electrically conductive diamond electrodes

    DOE Patents [OSTI]

    Swain, Greg; Fischer, Anne ,; Bennett, Jason; Lowe, Michael

    2009-05-19

    An electrically conductive diamond electrode and process for preparation thereof is described. The electrode comprises diamond particles coated with electrically conductive doped diamond preferably by chemical vapor deposition which are held together with a binder. The electrodes are useful for oxidation reduction in gas, such as hydrogen generation by electrolysis.

  3. Electronic Durability of Flexible Transparent Films from Type-Specific Single-Wall Carbon Nanotubes

    SciTech Connect (OSTI)

    Harris, J; Iyer, S; Bernhardt, A; Huh, JY; Hudson, S; Fagan, J; Hobbie, E.

    2011-12-11

    The coupling between mechanical flexibility and electronic performance is evaluated for thin films of metallic and semiconducting single-wall carbon nanotubes (SWCNTs) deposited on compliant supports. Percolated networks of type-purified SWCNTs are assembled as thin conducting coatings on elastic polymer substrates, and the sheet resistance is measured as a function of compression and cyclic strain through impedance spectroscopy. The wrinkling topography, microstructure and transparency of the films are independently characterized using optical microscopy, electron microscopy, and optical absorption spectroscopy. Thin films made from metallic SWCNTs show better durability as flexible transparent conductive coatings, which we attribute to a combination of superior mechanical performance and higher interfacial conductivity.

  4. Improving Data Transparency for the Distributed PV Interconnection...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Data Transparency for the Distributed PV Page 1 of 21 Interconnection Process Emergent ... The topic for today is: Improving Data Transparency for the Distributed PV Interconnection ...

  5. Subtask 5: Functional nanostructured transparent electrode materials...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5: Functional nanostructured transparent electrode materials All papers by year Subtask 1 Subtask 2 Subtask 3 Subtask 4 Subtask 5 Jeon, K.-W. and Seo, D.-K. (2014) Concomitant...

  6. Transparency: it's not just for windows

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transparency: it's not just for windows Transparency: it's not just for windows Los Alamos National Laboratory's database of environmental monitoring data is now directly viewable by the public. March 20, 2012 Intellus environmental data The same environmental data used by LANL scientists can be viewed by anyone, anytime. Contact Environmental Communications & Public Involvement P.O. Box 1663 MS M996 Los Alamos, NM 87545 (505) 667-0216 Email "The new system contains more than 9 million

  7. Three-terminal resistive switching memory in a transparent vertical-configuration device

    SciTech Connect (OSTI)

    Ungureanu, Mariana; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2014-01-06

    The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies.

  8. Comments on: New report offers best practice for transparent...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    sandia-national-laboratories-report-offers-best-practice-for-transparent-contract-language-of-pv-om-agreements...

  9. Methodology for Improved Adhesion for Deposited Fluorinated Transparen...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    compositions and doping to achieve a transparent conducting film, such as a transparent conductive oxide (TCO). In solar cell applications, the TCO may act as a transparent coating ...

  10. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-11-01

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing,more » between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.« less

  11. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-11-01

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.

  12. Transparent Conductors from Carbon Nanotubes LBL-Assembled with Polymer Dopant with ?-? Electron Transfer

    SciTech Connect (OSTI)

    Zhu, Jian; Shim, Bong Sup; Di Prima, Matthew; Kotov, Nicholas A.

    2011-01-01

    Single-walled carbon nanotube (SWNT) and other carbon-based coatings are being considered as replacements for indium tin oxide (ITO). The problems of transparent conductors (TCs) coatings from SWNT and similar materials include poor mechanical properties, high roughness, low temperature resilience, and fast loss of conductivity. The simultaneous realization of these desirable characteristics can be achieved using high structural control of layer-by-layer (LBL) deposition, which is demonstrated by the assembly of hydroethyl cellulose (HOCS) and sulfonated polyetheretherketone (SPEEK)-SWNTs. A new type of SWNT doping based on electron transfer from valence bands of nanotubes to unoccupied levels of SPEEK through ?-? interactions was identified for this system. It leads to a conductivity of 1.1 10? S/m at 66 wt % loadings of SWNT. This is better than other polymer/SWNT composites and translates into surface conductivity of 920 ?/? and transmittance of 86.7% at 550 nm. The prepared LBL films also revealed unusually high temperature resilience up to 500 C, and low roughness of 3.5 nm (ITO glass -2.4 nm). Tensile modulus, ultimate strength, and toughness of such coatings are 13 2 GPa, 366 35 MPa, and 8 3 kJ/m, respectively, and exceed corresponding parameters of all similar TCs. The cumulative figure of merit, ?TC, which included the critical failure strain relevant for flexible electronics, was ?TC = 0.022 and should be compared to ?TC = 0.006 for commercial ITO. Further optimization is possible using stratified nanoscale coatings and improved doping from the macromolecular LBL components.

  13. Fabrication of Transparent Capacitive Structure by Self-Assembled Thin Films

    SciTech Connect (OSTI)

    Zhang, Q.; Shing, Y. J.; Hua, Feng; Saraf, Laxmikant V.; Matson, Dean W.

    2008-06-01

    An approach to fabricating transparent electronic devices by using nanomaterial and nanofabrication is presented in this paper. A see-through capacitor is constructed from selfassembled silica nanoparticle layers that are stacked on the transparent substrate. The electrodes are made of indium tin oxide. Unlike the traditional processes used to fabricate such devices, the self-assembly approach enables one to synthesize the thin film layers at lower temperature and cost, and with a broader availability of nanomaterials. The vertical dimension of the selfassembled thin films can be precisely controlled, as well as the molecular order in the thin film layers. The shape of the capacitor is generated by planar micropatterning. The quartz crystal demonstrates the steady growth of the silica nanoparticle multilayer. In addition, because the nanomaterial synthesis and the device fabrication steps are separate, the device is not affected by the harsh conditions required for the material synthesis. A clear pattern is allowed over a large area on the substrate. The prepared capacitive structure has an optical transparency higher than 92% over the visible spectrum. The capacitive impedance is measured at different frequencies and fit the theoretical results. As one of the fundamental components, this type of capacitive structure can serve in the transparent circuits, interactive media and sensors, as well as being applicable to other transparent devices.

  14. Process for forming transparent aerogel insulating arrays

    SciTech Connect (OSTI)

    Tewari, P.H.; Hunt, A.J.

    1986-09-09

    This patent describes a drying process for forming transparent aerogel insulating arrays of the type utilizing the steps of hydrolyzing and condensing alkoxides to form alcogels, and subsequently removing the alcohol therefrom to form aerogels, the improvement comprising the additional step, after alcogels are formed, of substituting a solvent having a critical temperature less than the critical temperature of the alcohol for the alcohol in the alcogels, and drying the resulting gels at a supercritical temperature for the solvent, to thereby provide a transparent aerogel array within a substantially reduced drying time period.

  15. Overview of Russian HEU transparency issues

    SciTech Connect (OSTI)

    Kempf, C.R.; Bieniawski, A.

    1993-09-01

    The U.S. has signed an agreement with the Russian Federation for the purchase of 500 metric tons of highly-enriched uranium (HEU) taken from dismantled nuclear weapons. The HEU will be blended down to low-enriched uranium and will be transported to the U.S. to be used by fuel fabricators to make fuel for commercial nuclear power plants. Both the U.S. and Russia have been preparing to institute transparency measures to provide assurance that nonproliferation and arms control objectives specified in the agreement are met. This paper provides background information on the original agreement and on subsequent negotiations with the Russians, as well as discussion of technical aspects of developing transparency measures suited to the facilities and processes which are expected to be involved. Transparency has been defined as those agreed-upon measures which build confidence that arms control and non-proliferation objectives shared by the parties are met. Transparency is a departure from exhaustive, detailed arms control verification regimes of past agreements, which were based on a presumption of detecting transgressions as opposed to confirming compliance.

  16. Process for forming transparent aerogel insulating arrays

    DOE Patents [OSTI]

    Tewari, P.H.; Hunt, A.J.

    1985-09-04

    An improved supercritical drying process for forming transparent silica aerogel arrays is described. The process is of the type utilizing the steps of hydrolyzing and condensing aloxides to form alcogels. A subsequent step removes the alcohol to form aerogels. The improvement includes the additional step, after alcogels are formed, of substituting a solvent, such as CO/sub 2/, for the alcohol in the alcogels, the solvent having a critical temperature less than the critical temperature of the alcohol. The resulting gels are dried at a supercritical temperature for the selected solvent, such as CO/sub 2/, to thereby provide a transparent aerogel array within a substantially reduced (days-to-hours) time period. The supercritical drying occurs at about 40/sup 0/C instead of at about 270/sup 0/C. The improved process provides increased yields of large scale, structurally sound arrays. The transparent aerogel array, formed in sheets or slabs, as made in accordance with the improved process, can replace the air gap within a double glazed window, for example, to provide a substantial reduction in heat transfer. The thus formed transparent aerogel arrays may also be utilized, for example, in windows of refrigerators and ovens, or in the walls and doors thereof or as the active material in detectors for analyzing high energy elementary particles or cosmic rays.

  17. Process for forming transparent aerogel insulating arrays

    DOE Patents [OSTI]

    Tewari, Param H.; Hunt, Arlon J.

    1986-01-01

    An improved supercritical drying process for forming transparent silica aerogel arrays is described. The process is of the type utilizing the steps of hydrolyzing and condensing aloxides to form alcogels. A subsequent step removes the alcohol to form aerogels. The improvement includes the additional step, after alcogels are formed, of substituting a solvent, such as CO.sub.2, for the alcohol in the alcogels, the solvent having a critical temperature less than the critical temperature of the alcohol. The resulting gels are dried at a supercritical temperature for the selected solvent, such as CO.sub.2, to thereby provide a transparent aerogel array within a substantially reduced (days-to-hours) time period. The supercritical drying occurs at about 40.degree. C. instead of at about 270.degree. C. The improved process provides increased yields of large scale, structurally sound arrays. The transparent aerogel array, formed in sheets or slabs, as made in accordance with the improved process, can replace the air gap within a double glazed window, for example, to provide a substantial reduction in heat transfer. The thus formed transparent aerogel arrays may also be utilized, for example, in windows of refrigerators and ovens, or in the walls and doors thereof or as the active material in detectors for analyzing high energy elementry particles or cosmic rays.

  18. Diameter-Refined Metallic Carbon Nanotubes as Optically Tunable Transparent

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Conductors | ANSER Center | Argonne-Northwestern National Laboratory Diameter-Refined Metallic Carbon Nanotubes as Optically Tunable Transparent Conductors Home > Research > ANSER Research Highlights > Diameter-Refined Metallic Carbon Nanotubes as Optically Tunable Transparent Conductors

  19. Methods and apparatus for transparent display using scattering nanoparticles

    DOE Patents [OSTI]

    Hsu, Chia Wei; Qiu, Wenjun; Zhen, Bo; Shapira, Ofer; Soljacic, Marin

    2016-05-10

    Transparent displays enable many useful applications, including heads-up displays for cars and aircraft as well as displays on eyeglasses and glass windows. Unfortunately, transparent displays made of organic light-emitting diodes are typically expensive and opaque. Heads-up displays often require fixed light sources and have limited viewing angles. And transparent displays that use frequency conversion are typically energy inefficient. Conversely, the present transparent displays operate by scattering visible light from resonant nanoparticles with narrowband scattering cross sections and small absorption cross sections. More specifically, projecting an image onto a transparent screen doped with nanoparticles that selectively scatter light at the image wavelength(s) yields an image on the screen visible to an observer. Because the nanoparticles scatter light at only certain wavelengths, the screen is practically transparent under ambient light. Exemplary transparent scattering displays can be simple, inexpensive, scalable to large sizes, viewable over wide angular ranges, energy efficient, and transparent simultaneously.

  20. Transparent selective illumination means suitable for use in optically activated electrical switches and optically activated electrical switches constructed using same

    DOE Patents [OSTI]

    Wilcox, R.B.

    1991-09-10

    A planar transparent light conducting means and an improved optically activated electrical switch made using the novel light conducting means are disclosed. The light conducting means further comprise light scattering means on one or more opposite planar surfaces thereof to transmit light from the light conducting means into adjacent media and reflective means on other surfaces of the light conducting means not containing the light scattering means. The optically activated electrical switch comprises at least two stacked photoconductive wafers, each having electrodes formed on both surfaces thereof, and separated by the planar transparent light conducting means. The light scattering means on the light conducting means face surfaces of the wafers not covered by the electrodes to transmit light from the light conducting means into the photoconductive wafers to uniformly illuminate and activate the switch. 11 figures.

  1. Transparent selective illumination means suitable for use in optically activated electrical switches and optically activated electrical switches constructed using same

    DOE Patents [OSTI]

    Wilcox, Russell B.

    1991-01-01

    A planar transparent light conducting means and an improved optically activated electrical switch made using the novel light conducting means are disclosed. The light conducting means further comprise light scattering means on one or more opposite planar surfaces thereof to transmit light from the light conducting means into adjacent media and reflective means on other surfaces of the light conducting means not containing the light scattering means. The optically activated electrical switch comprises at least two stacked photoconductive wafers, each having electrodes formed on both surfaces thereof, and separated by the planar transparent light conducting means. The light scattering means on the light conducting means face surfaces of the wafers not covered by the electrodes to transmit light from the light conducting means into the photoconductive wafers to uniformly illuminate and activate the switch.

  2. Electrically conductive material

    DOE Patents [OSTI]

    Singh, Jitendra P.; Bosak, Andrea L.; McPheeters, Charles C.; Dees, Dennis W.

    1993-01-01

    An electrically conductive material for use in solid oxide fuel cells, electrochemical sensors for combustion exhaust, and various other applications possesses increased fracture toughness over available materials, while affording the same electrical conductivity. One embodiment of the sintered electrically conductive material consists essentially of cubic ZrO.sub.2 as a matrix and 6-19 wt. % monoclinic ZrO.sub.2 formed from particles having an average size equal to or greater than about 0.23 microns. Another embodiment of the electrically conductive material consists essentially at cubic ZrO.sub.2 as a matrix and 10-30 wt. % partially stabilized zirconia (PSZ) formed from particles having an average size of approximately 3 microns.

  3. Electrically conductive material

    DOE Patents [OSTI]

    Singh, J.P.; Bosak, A.L.; McPheeters, C.C.; Dees, D.W.

    1993-09-07

    An electrically conductive material is described for use in solid oxide fuel cells, electrochemical sensors for combustion exhaust, and various other applications possesses increased fracture toughness over available materials, while affording the same electrical conductivity. One embodiment of the sintered electrically conductive material consists essentially of cubic ZrO[sub 2] as a matrix and 6-19 wt. % monoclinic ZrO[sub 2] formed from particles having an average size equal to or greater than about 0.23 microns. Another embodiment of the electrically conductive material consists essentially at cubic ZrO[sub 2] as a matrix and 10-30 wt. % partially stabilized zirconia (PSZ) formed from particles having an average size of approximately 3 microns. 8 figures.

  4. Transparent monolithic metal ion containing nanophase aerogels

    SciTech Connect (OSTI)

    Risen, W. M., Jr.; Hu, X.; Ji, S.; Littrell, K.

    1999-12-01

    The formation of monolithic and transparent transition metal containing aerogels has been achieved through cooperative interactions of high molecular weight functionalized carbohydrates and silica precursors, which strongly influence the kinetics of gelation. After initial gelation, subsequent modification of the ligating character of the system, coordination of the group VIII metal ions, and supercritical extraction afford the aerogels. The structures at the nanophase level have been probed by photon and electron transmission and neutron scattering techniques to help elucidate the basis for structural integrity together with the small entity sizes that permit transparency in the visible range. They also help with understanding the chemical reactivities of the metal-containing sites in these very high surface area materials. These results are discussed in connection with new reaction studies.

  5. Transparent heat-spreader for optoelectronic applications

    DOE Patents [OSTI]

    Minano, Juan Carlos; Benitez, Pablo

    2014-11-04

    An optoelectronic cooling system is equally applicable to an LED collimator or a photovoltaic solar concentrator. A transparent fluid conveys heat from the optoelectronic chip to a hollow cover over the system aperture. The cooling system can keep a solar concentrator chip at the same temperature as found for a one-sun flat-plate solar cell. Natural convection or forced circulation can operate to convey heat from the chip to the cover.

  6. Improved open-circuit voltage in Cu(In,Ga)Se{sub 2} solar cells with high work function transparent electrodes

    SciTech Connect (OSTI)

    Jäger, Timo Romanyuk, Yaroslav E.; Bissig, Benjamin; Pianezzi, Fabian; Nishiwaki, Shiro; Reinhard, Patrick; Steinhauser, Jérôme; Tiwari, Ayodhya N.; Schwenk, Johannes

    2015-06-14

    Hydrogenated indium oxide (IOH) is implemented as transparent front contact in Cu(In,Ga)Se{sub 2} (CIGS) solar cells, leading to an open circuit voltage V{sub OC} enhanced by ∼20 mV as compared to reference devices with ZnO:Al (AZO) electrodes. This effect is reproducible in a wide range of contact sheet resistances corresponding to various IOH thicknesses. We present the detailed electrical characterization of glass/Mo/CIGS/CdS/intrinsic ZnO (i-ZnO)/transparent conductive oxide (TCO) with different IOH/AZO ratios in the front TCO contact in order to identify possible reasons for the enhanced V{sub OC}. Temperature and illumination intensity-dependent current-voltage measurements indicate that the dominant recombination path does not change when AZO is replaced by IOH, and it is mainly limited to recombination in the space charge region and at the junction interface of the solar cell. The main finding is that the introduction of even a 5 nm-thin IOH layer at the i-ZnO/TCO interface already results in a step-like increase in V{sub OC}. Two possible explanations are proposed and verified by one-dimensional simulations using the SCAPS software. First, a higher work function of IOH as compared to AZO is simulated to yield an V{sub OC} increase by 21 mV. Second, a lower defect density in the i-ZnO layer as a result of the reduced sputter damage during milder sputter-deposition of IOH can also add to a maximum enhanced V{sub OC} of 25 mV. Our results demonstrate that the proper choice of the front TCO contact can reduce the parasitic recombination and boost the efficiency of CIGS cells with improved corrosion stability.

  7. Multifunctional oxides for integrated manufacturing of efficient graphene electrodes for organic electronics

    SciTech Connect (OSTI)

    Kidambi, Piran R.; Robertson, John; Hofmann, Stephan; Weijtens, Christ; Meyer, Jens

    2015-02-09

    Using multi-functional oxide films, we report on the development of an integration strategy for scalable manufacturing of graphene-based transparent conducting electrodes (TCEs) for organic electronics. A number of fundamental and process challenges exists for efficient graphene-based TCEs, in particular, environmentally and thermally stable doping, interfacial band engineering for efficient charge injection/extraction, effective wetting, and process compatibility including masking and patterning. Here, we show that all of these challenges can be effectively addressed at once by coating graphene with a thin (>10 nm) metal oxide (MoO{sub 3} or WO{sub 3}) layer. We demonstrate graphene electrode patterning without the need for conventional lithography and thereby achieve organic light emitting diodes with efficiencies exceeding those of standard indium tin oxide reference devices.

  8. Radiation Heat Transfer in 3 Dimensions for Semi-Transparent Materials....

    Energy Science and Technology Software Center (OSTI)

    2010-12-02

    The RAD3D software solves the critical heat transfer mechanisms that occur in production glass furnaces. The code includes state-of-the-art solution algorithms for efficient radiant interaction of the heating elements, furnace walls and internal furnace components. The code specifically solves the coupled radiative and conductive heating of semi-transparent materials such as glass to calculate the temperature distribution in the glass during processing.

  9. TRANSPARENT HELIUM IN STRIPPED ENVELOPE SUPERNOVAE

    SciTech Connect (OSTI)

    Piro, Anthony L.; Morozova, Viktoriya S., E-mail: piro@caltech.edu [Theoretical Astrophysics, California Institute of Technology, 1200 E. California Blvd., M/C 350-17, Pasadena, CA 91125 (United States)

    2014-09-01

    Using simple arguments based on photometric light curves and velocity evolution, we propose that some stripped envelope supernovae (SNe) show signs that a significant fraction of their helium is effectively transparent. The main pieces of evidence are the relatively low velocities with little velocity evolution, as are expected deep inside an exploding star, along with temperatures that are too low to ionize helium. This means that the helium should not contribute to the shaping of the main SN light curve, and thus the total helium mass may be difficult to measure from simple light curve modeling. Conversely, such modeling may be more useful for constraining the mass of the carbon/oxygen core of the SN progenitor. Other stripped envelope SNe show higher velocities and larger velocity gradients, which require an additional opacity source (perhaps the mixing of heavier elements or radioactive nickel) to prevent the helium from being transparent. We discuss ways in which similar analysis can provide insights into the differences and similarities between SNe Ib and Ic, which will lead to a better understanding of their respective formation mechanisms.

  10. Powerpedia - Using Technology to Increase Transparency | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Powerpedia - Using Technology to Increase Transparency Powerpedia - Using Technology to Increase Transparency May 18, 2011 - 4:42pm Addthis The OCIO established a Department-wide wiki, Powerpedia, in early 2010 to facilitate knowledge capture and collaboration, and to increase efficiency. Leveraging lessons learned from the intelligence community's Intellipedia effort, the Department established Powerpedia to increase transparency and connect people and information together. Built on

  11. NEPA Process Transparency and Openness (DOE, 2009) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Process Transparency and Openness (DOE, 2009) NEPA Process Transparency and Openness (DOE, 2009) This memorandum describes the U.S. Department of Energy's (DOE's) policy for posting online the categorical exclusion determinations made by DOE NEPA Compliance Officers. Download Document NEPA Process Transparency and Openness (59.69 KB) More Documents & Publications Recommendations for the Preparation of Environmental Assessments and Environmental Impact Statements Second Edition (DOE, 2004) 10

  12. Promoting NEPA Transparency and Public Engagement | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Promoting NEPA Transparency and Public Engagement Promoting NEPA Transparency and Public Engagement June 3, 2011 - 1:14pm Addthis "NEPA is, at its core, a transparency statute," said Katie Scharf, Council on Environmental Quality (CEQ) Deputy General Counsel, in opening a panel discussion on using information technology to support open government initiatives, engage the public, and add value to NEPA analysis. At the March 9, 2011, event - hosted by CEQ for Federal NEPA and legal staff

  13. Net Requirements Transparency Process for Slice/Block Customers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4, 2012 Net Requirements Transparency Process for SliceBlock Customers Description of Changes and a Response to Comments September 24, 2012 Background and Description of Changes:...

  14. Benchmarking and Transparency Policy and Program Impact Evaluation...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Benchmarking and Transparency Policy and Program Impact Evaluation Handbook Prepared for by the U.S. Department of Energy, this Handbook provides both a strategic planning ...

  15. Sorted Single-Walled Carbon Nanotube Films for Transparent Electrodes...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sorted Single-Walled Carbon Nanotube Films for Transparent Electrodes in Organic Solar Cells Home > Research > ANSER Research Highlights > Sorted Single-Walled Carbon Nanotube...

  16. New York City Benchmarking and Transparency Policy Impact Evaluation...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    New York City's benchmarking and transparency policy, Local Law 84, and the results of the application of those methodologies to the early period of the policy's implementation. ...

  17. Researchers Create Transparent Lithium-Ion Battery - Joint Center...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stanford and SLAC National Accelerator Laboratory researchers have invented a transparent lithium-ion battery that is also highly flexible. It is comparable in cost to regular ...

  18. Oxygen ion conducting materials

    DOE Patents [OSTI]

    Carter, J. David; Wang, Xiaoping; Vaughey, John; Krumpelt, Michael

    2004-11-23

    An oxygen ion conducting ceramic oxide that has applications in industry including fuel cells, oxygen pumps, oxygen sensors, and separation membranes. The material is based on the idea that substituting a dopant into the host perovskite lattice of (La,Sr)MnO.sub.3 that prefers a coordination number lower than 6 will induce oxygen ion vacancies to form in the lattice. Because the oxygen ion conductivity of (La,Sr)MnO.sub.3 is low over a very large temperature range, the material exhibits a high overpotential when used. The inclusion of oxygen vacancies into the lattice by doping the material has been found to maintain the desirable properties of (La,Sr)MnO.sub.3, while significantly decreasing the experimentally observed overpotential.

  19. Oxygen ion conducting materials

    DOE Patents [OSTI]

    Vaughey, John; Krumpelt, Michael; Wang, Xiaoping; Carter, J. David

    2005-07-12

    An oxygen ion conducting ceramic oxide that has applications in industry including fuel cells, oxygen pumps, oxygen sensors, and separation membranes. The material is based on the idea that substituting a dopant into the host perovskite lattice of (La,Sr)MnO.sub.3 that prefers a coordination number lower than 6 will induce oxygen ion vacancies to form in the lattice. Because the oxygen ion conductivity of (La,Sr)MnO.sub.3 is low over a very large temperature range, the material exhibits a high overpotential when used. The inclusion of oxygen vacancies into the lattice by doping the material has been found to maintain the desirable properties of (La,Sr)MnO.sub.3, while significantly decreasing the experimentally observed overpotential.

  20. Oxygen ion conducting materials

    DOE Patents [OSTI]

    Vaughey, John; Krumpelt, Michael; Wang, Xiaoping; Carter, J. David

    2003-01-01

    An oxygen ion conducting ceramic oxide that has applications in industry including fuel cells, oxygen pumps, oxygen sensors, and separation membranes. The material is based on the idea that substituting a dopant into the host perovskite lattice of (La,Sr)MnO.sub.3 that prefers a coordination number lower than 6 will induce oxygen ion vacancies to form in the lattice. Because the oxygen ion conductivity of (La,Sr)MnO.sub.3 is low over a very large temperature range, the material exhibits a high overpotential when used. The inclusion of oxygen vacancies into the lattice by doping the material has been found to maintain the desirable properties of (La,Sr)MnO.sub.3, while significantly decreasing the experimentally observed overpotential.

  1. Partial oxidation catalyst

    DOE Patents [OSTI]

    Krumpelt, Michael; Ahmed, Shabbir; Kumar, Romesh; Doshi, Rajiv

    2000-01-01

    A two-part catalyst comprising a dehydrogenation portion and an oxide-ion conducting portion. The dehydrogenation portion is a group VIII metal and the oxide-ion conducting portion is selected from a ceramic oxide crystallizing in the fluorite or perovskite structure. There is also disclosed a method of forming a hydrogen rich gas from a source of hydrocarbon fuel in which the hydrocarbon fuel contacts a two-part catalyst comprising a dehydrogenation portion and an oxide-ion conducting portion at a temperature not less than about 400.degree. C. for a time sufficient to generate the hydrogen rich gas while maintaining CO content less than about 5 volume percent. There is also disclosed a method of forming partially oxidized hydrocarbons from ethanes in which ethane gas contacts a two-part catalyst comprising a dehydrogenation portion and an oxide-ion conducting portion for a time and at a temperature sufficient to form an oxide.

  2. Site Dependency of the High Conductivity of Ga 2 In 6 Sn 2 O 16 : The Role of the 7-Coordinate Site

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Rickert, Karl; Huq, Ashfia; Lapidus, Saul H.; Wustrow, Allison; Ellis, Donald E.; Poeppelmeier, Kenneth R.

    2015-11-11

    In 6-coordinated cation sites, we find that it is the fundamental building block of the most effective transparent conducting oxides. Ga2In6SnO16, however, maintains 4-, 6-, 7-, and 8-coordinated cation sites and still exhibits desirable transparency and high conductivity. To investigate the potential impact of these alternative sites, we partially replace the Sn in Ga2In6Sn2O16 with Ti, Zr, or Hf and use a combined approach of density functional theory-based calculations, X-ray diffraction, and neutron diffraction to establish that the substitution occurs preferentially on the 7-coordinate site. Conversely to Sn, the empty d orbitals of Ti, Zr, and Hf promote spd covalencymore » with the surrounding oxygen, which decreases the conductivity. Pairing the substitutional site preference with the magnitude of this decrease demonstrates that the 7-coordinate site is the V major contributor to conductivity. The optical band gaps, in contrast, are shown to be site-independent and composition-dependent. After all 7-coordinate Sn has been replaced, the continued substitution of Sn results in the formation of a 7-coordinate In antisite or replacement of 6-coordinate Sn, depending on the identity of the d(0) substitute.« less

  3. Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

    SciTech Connect (OSTI)

    Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgstrm, Magnus T.; Hessman, Dan; Samuelson, Lars

    2013-12-04

    We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

  4. Transparent conductive Al-doped ZnO thin films grown at room temperature

    SciTech Connect (OSTI)

    Wang Yuping; Lu Jianguo; Bie Xun; Gong Li; Li Xiang; Song Da; Zhao Xuyang; Ye Wenyi; Ye Zhizhen

    2011-05-15

    Aluminum-doped ZnO (ZnO:Al, AZO) thin films were prepared on glass substrates by dc reactive magnetron sputtering from a Zn-Al alloy target at room temperature. The effects of the Ar-to-O{sub 2} partial pressure ratios on the structural, electrical, and optical properties of AZO films were studied in detail. AZO films grown using 100:4 to 100:8 Ar-to-O{sub 2} ratio result in acceptable quality films with c-axis orientated crystals, uniform grains, 10{sup -3} {Omega} cm resistivity, greater than 10{sup 20} cm{sup -3} electron concentration, and high transmittance, 90%, in the visible region. The lowest resistivity of 4.11x10{sup -3} {Omega} cm was obtained under the Ar-to-O{sub 2} partial pressure ratio of 100:4. A relatively strong UV emission at {approx}3.26 eV was observed in the room-temperature photoluminescence spectrum. X-ray photoelectron spectroscopy analysis confirmed that Al was introduced into ZnO and substitutes for Zn and doped the film n-type.

  5. Next-Generation LED Package Architectures Enabled by Thermally Conductive Transparent Encapsulants

    Broader source: Energy.gov [DOE]

    Lead Performer: Momentive Performance Materials Quartz, Inc.DOE Total Funding: $1,497,255Cost Share: $512,700Project Term: 10/1/2014 - 3/31/2016Funding Opportunity: SSL R&D Funding Opportunity...

  6. Thin film method of conducting lithium-ions

    DOE Patents [OSTI]

    Zhang, J.G.; Benson, D.K.; Tracy, C.E.

    1998-11-10

    The present invention relates to the composition of a solid lithium-ion electrolyte based on the Li{sub 2}O-CeO{sub 2}-SiO{sub 2} system having good transparent characteristics and high ion conductivity suitable for uses in lithium batteries, electrochromic devices and other electrochemical applications. 12 figs.

  7. Thin film method of conducting lithium-ions

    DOE Patents [OSTI]

    Zhang, Ji-Guang; Benson, David K.; Tracy, C. Edwin

    1998-11-10

    The present invention relates to the composition of a solid lithium-ion electrolyte based on the Li.sub.2 O--CeO.sub.2 --SiO.sub.2 system having good transparent characteristics and high ion conductivity suitable for uses in lithium batteries, electrochromic devices and other electrochemical applications.

  8. Improving the Transparency of IAEA Safeguards Reporting

    SciTech Connect (OSTI)

    Toomey, Christopher; Hayman, Aaron M.; Wyse, Evan T.; Odlaug, Christopher S.

    2011-07-17

    In 2008, the Standing Advisory Group on Safeguards Implementation (SAGSI) indicated that the International Atomic Energy Agency's (IAEA) Safeguards Implementation Report (SIR) has not kept pace with the evolution of safeguards and provided the IAEA with a set of recommendations for improvement. The SIR is the primary mechanism for providing an overview of safeguards implementation in a given year and reporting on the annual safeguards findings and conclusions drawn by the Secretariat. As the IAEA transitions to State-level safeguards approaches, SIR reporting must adapt to reflect these evolutionary changes. This evolved report will better reflect the IAEA's transition to a more qualitative and information-driven approach, based upon State-as-a-whole considerations. This paper applies SAGSI's recommendations to the development of multiple models for an evolved SIR and finds that an SIR repurposed as a 'safeguards portal' could significantly enhance information delivery, clarity, and transparency. In addition, this paper finds that the 'portal concept' also appears to have value as a standardized information presentation and analysis platform for use by Country Officers, for continuity of knowledge purposes, and the IAEA Secretariat in the safeguards conclusion process. Accompanying this paper is a fully functional prototype of the 'portal' concept, built using commercial software and IAEA Annual Report data.

  9. Transparent Metal-Organic Framework/Polymer Mixed Matrix Membranes...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transparent Metal-Organic FrameworkPolymer Mixed Matrix Membranes as Water Vapor Barriers Previous Next List Bae, Youn Jue; Cho, Eun Seon; Qu, Fen; Sun, Daniel T.; Williams, ...

  10. Net Requirements Transparency Process for Slice/Block and Block...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3 As part of its Net Requirements Transparency process, on July 31, 2013 BPA published the SliceBlock and Block customers' FY2012 and forecast FY2014 Total Retail Load (TRL) and...