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1

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Looking at Transistor Gate Oxide Formation in Real Time Print Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained real-time oxidation results for this elusive range. Using the ambient-pressure x-ray photoelectron spectroscopy (APXPS) endstation at ALS Beamline 9.3.2, they examined oxidation of Si(100) at pressures up to 1 torr and temperatures up to 450 ºC. The Si 2p chemical shifts allowed determination of oxide thickness as a function of time with a precision of 1-2 Å. The initial oxidation rate was very high (up to ~234 Å/h). Then, after an initial oxide thickness of 6-22 Å was formed, the rate decreased markedly (~1.5-4.0Å/h). Neither rate regime can be explained by the standard Deal-Grove (D-G) model for Si oxidation. These results are a significant step toward developing a better understanding of this critical thickness regime.

2

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Looking at Transistor Gate Oxide Formation in Real Time Print Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained real-time oxidation results for this elusive range. Using the ambient-pressure x-ray photoelectron spectroscopy (APXPS) endstation at ALS Beamline 9.3.2, they examined oxidation of Si(100) at pressures up to 1 torr and temperatures up to 450 ºC. The Si 2p chemical shifts allowed determination of oxide thickness as a function of time with a precision of 1-2 Å. The initial oxidation rate was very high (up to ~234 Å/h). Then, after an initial oxide thickness of 6-22 Å was formed, the rate decreased markedly (~1.5-4.0Å/h). Neither rate regime can be explained by the standard Deal-Grove (D-G) model for Si oxidation. These results are a significant step toward developing a better understanding of this critical thickness regime.

3

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Looking at Transistor Gate Oxide Formation in Real Time Print Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained real-time oxidation results for this elusive range. Using the ambient-pressure x-ray photoelectron spectroscopy (APXPS) endstation at ALS Beamline 9.3.2, they examined oxidation of Si(100) at pressures up to 1 torr and temperatures up to 450 ºC. The Si 2p chemical shifts allowed determination of oxide thickness as a function of time with a precision of 1-2 Å. The initial oxidation rate was very high (up to ~234 Å/h). Then, after an initial oxide thickness of 6-22 Å was formed, the rate decreased markedly (~1.5-4.0Å/h). Neither rate regime can be explained by the standard Deal-Grove (D-G) model for Si oxidation. These results are a significant step toward developing a better understanding of this critical thickness regime.

4

Advanced insulated gate bipolar transistor gate drive  

DOE Patents [OSTI]

A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

Short, James Evans (Monongahela, PA); West, Shawn Michael (West Mifflin, PA); Fabean, Robert J. (Donora, PA)

2009-08-04T23:59:59.000Z

5

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors  

E-Print Network [OSTI]

We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.

D. J. Carrad; A. M. Burke; R. W. Lyttleton; H. J. Joyce; H. H. Tan; C. Jagadish; K. Storm; H. Linke; L. Samuelson; A. P. Micolich

2014-04-08T23:59:59.000Z

6

Thermally deposited Ag-doped CdS thin film transistors with high-k rare-earth oxide Nd2O3 as gate dielectric  

Science Journals Connector (OSTI)

The performance of thermally deposited CdS thin film transistors doped with Ag has been reported. Ag-doped CdS thin films have been prepared using chemical...2O3 has been used as gate insulator. The thin film tra...

P. Gogoi

2013-03-01T23:59:59.000Z

7

A SIMULATION MODEL FOR FLOATING-GATE MOS SYNAPSE TRANSISTORS  

E-Print Network [OSTI]

A SIMULATION MODEL FOR FLOATING-GATE MOS SYNAPSE TRANSISTORS Kambiz Rahimi, Chris Diorio, Cecilia, Seattle, Washington ABSTRACT We propose an empirical simulation model for p-channel floating-gate MOS and accurate simulation model for the synaptic devices, many of these circuits were designed using equation

Diorio, Chris

8

Design, Simulation and Modeling of Insulated Gate Bipolar Transistor  

E-Print Network [OSTI]

The market for Insulated Gate Bipolar Transistor (IGBT) is growing and there is a need for techniques to improve the design, modeling and simulation of IGBT. In this thesis, we first developed a new method to optimize the layout and dimensions...

Gupta, Kaustubh

2013-07-09T23:59:59.000Z

9

New Silicon Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET)  

E-Print Network [OSTI]

New Silicon Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET) without PN. In this paper, we propose a novel Schottky-gate BMFET (SBMFET) using P- type 4H Silicon-Carbide 13,41, a wide, Silicon Carbide, Field effect transistor, Simulation. I. INTRODUCTION TH E BMFET operates in bipolar mode

Kumar, M. Jagadesh

10

Molecular doping for control of gate bias stress in organic thin film transistors  

SciTech Connect (OSTI)

The key active devices of future organic electronic circuits are organic thin film transistors (OTFTs). Reliability of OTFTs remains one of the most challenging obstacles to be overcome for broad commercial applications. In particular, bias stress was identified as the key instability under operation for numerous OTFT devices and interfaces. Despite a multitude of experimental observations, a comprehensive mechanism describing this behavior is still missing. Furthermore, controlled methods to overcome these instabilities are so far lacking. Here, we present the approach to control and significantly alleviate the bias stress effect by using molecular doping at low concentrations. For pentacene and silicon oxide as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias stress behavior is explained in terms of the shift of Fermi Level and, thus, exponentially reduced proton generation at the pentacene/oxide interface.

Hein, Moritz P., E-mail: hein@iapp.de; Lssem, Bjrn; Jankowski, Jens; Tietze, Max L.; Riede, Moritz K. [Institut fr Angewandte Photophysik, Technische Universitt Dresden, George-Bhr-Strae 1, 01069 Dresden (Germany)] [Institut fr Angewandte Photophysik, Technische Universitt Dresden, George-Bhr-Strae 1, 01069 Dresden (Germany); Zakhidov, Alexander A. [Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany)] [Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany); Leo, Karl [Institut fr Angewandte Photophysik, Technische Universitt Dresden, George-Bhr-Strae 1, 01069 Dresden (Germany) [Institut fr Angewandte Photophysik, Technische Universitt Dresden, George-Bhr-Strae 1, 01069 Dresden (Germany); Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany)

2014-01-06T23:59:59.000Z

11

Influence of Electrolyte Composition on Liquid-Gated Carbon Nanotube and Graphene Transistors  

E-Print Network [OSTI]

Influence of Electrolyte Composition on Liquid-Gated Carbon Nanotube and Graphene Transistors Iddo-walled carbon nanotubes (SWNTs) and graphene can function as highly sensitive nanoscale (bio)sensors in solution. Here, we compare experimentally how SWNT and graphene transistors respond to changes in the composition

Dekker, Cees

12

Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1  

E-Print Network [OSTI]

Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1 , Cory Dean1, 10027 Tel: (212) 854-2529, Fax: (212) 932-9421, Email: shepard@ee.columbia.edu Abstract Graphene field of graphene, as the gate dielectric. The devices ex- hibit mobility values exceeding 10,000 cm2 /V

Shepard, Kenneth

13

Encapsulated gate-all-around InAs nanowire field-effect transistors  

SciTech Connect (OSTI)

We report the fabrication of lateral gate-all-around InAs nanowire field-effect transistors whose gate overlaps the source and drain electrodes and thus fully encapsulates the nanowire channel. They feature large drive current and transconductance that surpass those of conventional non-gate-overlap devices. The improved device characteristics can be attributed to the elimination of access resistance associated with ungated segments between the gate and source/drain electrodes. Our data also reveal a correlation between the normalized transconductance and the threshold voltage, which points to a beneficial effect of our wet-etching procedure performed prior to the atomic-layer-deposition of the gate dielectric.

Sasaki, Satoshi, E-mail: sasaki.s@lab.ntt.co.jp; Tateno, Kouta; Zhang, Guoqiang; Suominen, Henri; Harada, Yuichi; Saito, Shiro; Fujiwara, Akira; Sogawa, Tetsuomi; Muraki, Koji [NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)] [NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)

2013-11-18T23:59:59.000Z

14

Coherent molecular transistor: Control through variation of the gate wave function  

SciTech Connect (OSTI)

In quantum interference transistors (QUITs), the current through the device is controlled by variation of the gate component of the wave function that interferes with the wave function component joining the source and the sink. Initially, mesoscopic QUITs have been studied and more recently, QUITs at the molecular scale have been proposed and implemented. Typically, in these devices the gate lead is subjected to externally adjustable physical parameters that permit interference control through modifications of the gate wave function. Here, we present an alternative model of a molecular QUIT in which the gate wave function is directly considered as a variable and the transistor operation is discussed in terms of this variable. This implies that we specify the gate current as well as the phase of the gate wave function component and calculate the resulting current through the source-sink channel. Thus, we extend on prior works that focus on the phase of the gate wave function component as a control parameter while having zero or certain discrete values of the current. We address a large class of systems, including finite graphene flakes, and obtain analytic solutions for how the gate wave function controls the transistor.

Ernzerhof, Matthias, E-mail: Matthias.Ernzerhof@UMontreal.ca [Dpartement de Chimie, Universit de Montral, C.P. 6128 Succursale A, Montral, Quebec H3C 3J7 (Canada)] [Dpartement de Chimie, Universit de Montral, C.P. 6128 Succursale A, Montral, Quebec H3C 3J7 (Canada)

2014-03-21T23:59:59.000Z

15

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network [OSTI]

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

16

Choosing a gate dielectric for graphene based transistors  

E-Print Network [OSTI]

Much attention has recently been focused on graphene as an alternative semiconductor to silicon. Transistors with graphene conduction channels have only recently been fabricated and their performance remains to be optimized. ...

Hsu, Pei-Lan, M. Eng. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

17

Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures  

Science Journals Connector (OSTI)

Strong plasmon resonances have been observed in the terahertz transmission spectra (15 THz) of large-area slit-grating-gate AlGaN/GaN-based high-electron-mobility transistor(HEMT) structures at temperatures from 10 to 170 K. The resonance frequencies correspond to the excitation of plasmons with wave vectors equal to the reciprocal lattice vectors of the metal grating which serves both as a gate electrode for the HEMT and a coupler between plasmons and incident terahertz radiation. Wide tunability of the resonances by the applied gate voltage demonstrates potential of these devices for terahertz applications.

A. V. Muravjov; D. B. Veksler; V. V. Popov; O. V. Polischuk; N. Pala; X. Hu; R. Gaska; H. Saxena; R. E. Peale; M. S. Shur

2010-01-01T23:59:59.000Z

18

Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment  

SciTech Connect (OSTI)

Deposition of high-quality dielectric on a graphene channel is an essential technology to overcome structural constraints for the development of nano-electronic devices. In this study, we investigated a method for directly depositing aluminum oxide (Al{sub 2}O{sub 3}) on a graphene channel through nitrogen plasma treatment. The deposited Al{sub 2}O{sub 3} thin film on graphene demonstrated excellent dielectric properties with negligible charge trapping and de-trapping in the gate insulator. A top-gate-structural graphene transistor was fabricated using Al{sub 2}O{sub 3} as the gate dielectric with nitrogen plasma treatment on graphene channel region, and exhibited p-type transistor characteristics.

Lim, Taekyung; Kim, Dongchool; Ju, Sanghyun [Department of Physics, Kyonggi University, Suwon, Gyeonggi-Do 443-760 (Korea, Republic of)

2013-07-01T23:59:59.000Z

19

Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors  

SciTech Connect (OSTI)

Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. The placement of the gate driver circuit next to the power switch is optimal for minimising system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the power-to-volume ratio as well as the power-to-weight ratio for power conversion modules such as a DC-DC converter, inverter etc. A silicon-on-insulator (SOI)-based high-voltage, high-temperature integrated circuit (IC) gate driver for SiC power FETs has been designed and fabricated using a commercially available 0.8--m, 2-poly and 3-metal bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) process. The prototype circuit-s maximum gate drive supply can be 40-V with peak 2.3-A sourcing/sinking current driving capability. Owing to the wide driving range, this gate driver IC can be used to drive a wide variety of SiC FET switches (both normally OFF metal oxide semiconductor field effect transistor (MOSFET) and normally ON junction field effect transistor (JFET)). The switching frequency is 20-kHz and the duty cycle can be varied from 0 to 100-. The circuit has been successfully tested with SiC power MOSFETs and JFETs without any heat sink and cooling mechanism. During these tests, SiC switches were kept at room temperature and ambient temperature of the driver circuit was increased to 200-C. The circuit underwent numerous temperature cycles with negligible performance degradation.

Tolbert, Leon M [ORNL; Huque, Mohammad A [ORNL; Blalock, Benjamin J [ORNL; Islam, Syed K [ORNL

2010-01-01T23:59:59.000Z

20

Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature  

SciTech Connect (OSTI)

Top-gated graphene field-effect transistors (GFETs) have been fabricated using bilayer epitaxial graphene grown on the Si-face of 4H-SiC substrates by thermal decomposition of silicon carbide in high vacuum. Graphene films were characterized by Raman spectroscopy, Atomic Force Microscopy, Scanning Tunnelling Microscopy, and Hall measurements to estimate graphene thickness, morphology, and charge transport properties. A 27?nm thick Al{sub 2}O{sub 3} gate dielectric was grown by atomic layer deposition with an e-beam evaporated Al seed layer. Electrical characterization of the GFETs has been performed at operating temperatures up to 100?C limited by deterioration of the gate dielectric performance at higher temperatures. Devices displayed stable operation with the gate oxide dielectric strength exceeding 4.5 MV/cm at 100?C. Significant shifting of the charge neutrality point and an increase of the peak transconductance were observed in the GFETs as the operating temperature was elevated from room temperature to 100?C.

Hopf, T.; Vassilevski, K. V., E-mail: k.vasilevskiy@ncl.ac.uk; Escobedo-Cousin, E.; King, P. J.; Wright, N. G.; O'Neill, A. G.; Horsfall, A. B.; Goss, J. P. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Wells, G. H.; Hunt, M. R. C. [Department of Physics, Durham University, Durham DH1 3LE (United Kingdom)

2014-10-21T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

A high-k ferroelectric relaxor terpolymer as a gate dielectric for orgnaic thin film transistors  

SciTech Connect (OSTI)

Poly(vinylidenefluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)) is a ferroelectric terpolymer relaxor with a static dielectric constant of 50, which was developed using defect modification to eliminate remnant polarization in the normal ferroelectric PVDF. In this work, this solution processable terpolymer was used as the gate insulator in bottom gated organic thin-film transistors with a pentacene semiconductor layer. Due to the high dielectric constant of P(VDF-TrFE- CFE), a large capacitive coupling between the gate and channel can be achieved which causes a high charge concentration at the interface of the semiconductor and dielectric layers. In this device, an on/ off ratio of 104 and a low minimum operation gate voltage (5-10 V) were attained

Wu, Shan [Pennsylvania State University; Shao, Ming [ORNL; Burlingame, Quinn [Pennsylvania State University; Chen, Xiangzhong [Penn state university; Lin, Minren [Pennsylvania State University; Xiao, Kai [ORNL; Zhang, Qiming [Pennsylvania State University

2013-01-01T23:59:59.000Z

22

Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays  

SciTech Connect (OSTI)

Low-frequency noise is used to study the electronic transport in arrays of 14?nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the heart of the wire, and the extremely low noise level is comparable to that of high quality epitaxial layers. Although contact noise can already be a source of poor transistor operation above threshold voltage for few nanowires, nanowire parallelization drastically reduces its impact.

Clment, N., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr; Han, X. L. [Institute of Electronics, Microelectronics and Nanotechnology, CNRS, Avenue Poincar, 59652 Villeneuve d'Ascq (France)] [Institute of Electronics, Microelectronics and Nanotechnology, CNRS, Avenue Poincar, 59652 Villeneuve d'Ascq (France); Larrieu, G., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr [Laboratory for Analysis and Architecture of Systems (LAAS), CNRS, Universite de Toulouse, 7 Avenue Colonel Roche, 31077 Toulouse (France)

2013-12-23T23:59:59.000Z

23

Passivation effect on gate-bias stress instability of carbon nanotube thin film transistors  

SciTech Connect (OSTI)

A prior requirement of any developed transistor for practical use is the stability test. Random network carbon nanotube-thin film transistor (CNT-TFT) was fabricated on SiO{sub 2}/Si. Gate bias stress stability was investigated with various passivation layers of HfO{sub 2} and Al{sub 2}O{sub 3}. Compared to the threshold voltage shift without passivation layer, the measured values in the presence of passivation layers were reduced independent of gate bias polarity except HfO{sub 2} under positive gate bias stress (PGBS). Al{sub 2}O{sub 3} capping layer was found to be the best passivation layer to prevent ambient gas adsorption, while gas adsorption on HfO{sub 2} layer was unavoidable, inducing surface charges to increase threshold voltage shift in particular for PGBS. This high performance in the gate bias stress test of CNT-TFT even superior to that of amorphous silicon opens potential applications to active TFT industry for soft electronics.

Won Lee, Sang [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Suh, Dongseok, E-mail: energy.suh@skku.edu [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science and Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Young Lee, Si [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Physics, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Hee Lee, Young, E-mail: leeyoung@skku.edu [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science and Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Physics, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2014-04-21T23:59:59.000Z

24

Combinatorial study of zinc tin oxide thin-film transistors  

SciTech Connect (OSTI)

Groups of thin-film transistors using a zinc tin oxide semiconductor layer have been fabricated via a combinatorial rf sputtering technique. The ZnO:SnO{sub 2} ratio of the film varies as a function of position on the sample, from pure ZnO to SnO{sub 2}, allowing for a study of zinc tin oxide transistor performance as a function of channel stoichiometry. The devices were found to have mobilities ranging from 2 to 12 cm{sup 2}/V s, with two peaks in mobility in devices at ZnO fractions of 0.80{+-}0.03 and 0.25{+-}0.05, and on/off ratios as high as 10{sup 7}. Transistors composed predominantly of SnO{sub 2} were found to exhibit light sensitivity which affected both the on/off ratios and threshold voltages of these devices.

McDowell, M. G.; Sanderson, R. J.; Hill, I. G. [Dalhousie University, Department of Physics, Halifax, Nova Scotia B3H 3J5 (Canada)

2008-01-07T23:59:59.000Z

25

Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors  

Science Journals Connector (OSTI)

We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (?-HfIZO) thin film transistors (TFTs). Co-sputtering-processed ?-HfIZO thin films have shown an amorphous phase in nature. ...

Sheng-Po Chang; San-Syong Shih

2012-01-01T23:59:59.000Z

26

Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability  

SciTech Connect (OSTI)

We fabricated nano-crystalline Si (nc-Si:H) thin-film transistors (TFTs) with a double-metal-gate structure, which showed a high electron-mobility (?{sub FE}) and adjustable threshold voltages (V{sub th}). The nc-Si:H channel and source/drain (S/D) of the multilayered TFT were deposited at 375?C by inductively coupled plasma chemical vapor deposition. The low grain-boundary defect density of the channel layer is responsible for the high ?{sub FE} of 370 cm{sup 2}/V-s, a steep subthreshold slope of 90?mV/decade, and a low V{sub th} of ?0.64?V. When biased with the double-gate driving mode, the device shows a tunable V{sub th} value extending from ?1?V up to 2.7?V.

Chiou, Uio-Pu; Pan, Fu-Ming, E-mail: fmpan@faculty.nctu.edu.tw [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China)] [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China); Shieh, Jia-Min, E-mail: jmshieh@narlabs.org.tw, E-mail: jmshieh@faculty.nctu.edu.tw [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China) [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China); Yang, Chih-Chao [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China)] [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Huang, Wen-Hsien [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China) [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China); National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Kao, Yo-Tsung [Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China)] [Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China)

2013-11-11T23:59:59.000Z

27

Effects of fluorine incorporation into HfO{sub 2} gate dielectrics on InP and In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors  

SciTech Connect (OSTI)

In this work, the effects of fluorine (F) incorporation on electrical characteristics of HfO{sub 2}/InP and HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As gate stack are presented. F had been introduced into HfO{sub 2} gate dielectric by postgate CF{sub 4} plasma treatment, which was confirmed by x-ray photoelectron spectroscopy analysis and a secondary ion mass spectrometry technique. Compared to the control sample, fluorinated samples had great improvements in subthreshold swing, hysteresis, the normalized extrinsic transconductance, and the normalized drain current. These improvements can be attributed to the reduction in fixed charge in the HfO{sub 2} bulk and less interface trap density at the HfO{sub 2}/III-V interface.

Chen Yenting; Zhao Han; Wang Yanzhen; Xue Fei; Zhou Fei; Lee, Jack C. [Department of Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin, Texas 78758 (United States)

2010-06-21T23:59:59.000Z

28

Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors  

SciTech Connect (OSTI)

We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (?130?C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for free without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k?=?3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriers as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.

Sanne, A.; Movva, H. C. P.; Kang, S.; McClellan, C.; Corbet, C. M.; Banerjee, S. K. [Microelectronics Research Center, University of Texas, Austin, Texas 78758 (United States)

2014-02-24T23:59:59.000Z

29

InGaZnO thin film transistor with HfO{sub 2} gate insulator prepared using various O{sub 2}/(Ar + O{sub 2}) gas ratios  

SciTech Connect (OSTI)

We have investigated the effect of the deposition of an HfO{sub 2} thin film as a gate insulator with different O{sub 2}/(Ar + O{sub 2}) gas ratios using RF magnetron sputtering. The HfO{sub 2} thin film affected the device performance of amorphous indiumgalliumzinc oxide transistors. The performance of the fabricated transistors improved monotonously with increasing O{sub 2}/(Ar + O{sub 2}) gas ratio: at a ratio of 0.35, the field effect mobility of the amorphous InGaZnO thin film transistors was improved to 7.54 cm{sup 2}/(V s). Compared to those prepared with an O{sub 2}/(Ar + O{sub 2}) gas ratio of 0.05, the field effect mobility of the amorphous InGaZnO thin film transistors was increased to 1.64 cm{sup 2}/(V s) at a ratio of 0.35. This enhancement in the field effect mobility was attributed to the reduction of the root mean square roughness of the gate insulator layer, which might result from the trap states and surface scattering of the gate insulator layer at the lower O{sub 2}/(Ar + O{sub 2}) gas ratio.

Jo, Young Je [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of)] [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of); Lee, In-Hwan [School of Advanced Materials Engineering, Chonbuk National University, Chonju 561-756 (Korea, Republic of)] [School of Advanced Materials Engineering, Chonbuk National University, Chonju 561-756 (Korea, Republic of); Kwak, Joon Seop, E-mail: jskwak@sunchon.ac.kr [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of)

2012-10-15T23:59:59.000Z

30

A Low Temperature Fully Lithographic Process For MetalOxide Field-Effect Transistors  

E-Print Network [OSTI]

We report a low temperature ( ~ 100 °C) lithographic method for fabricating hybrid metal oxide/organic field-effect transistors (FETs) that combine a zinc-indium-oxide (ZIO) semiconductor channel and organic, parylene, ...

Sodini, Charles G.

31

Electron Transport Behavior on Gate Length Scaling in Sub-50 nm GaAs Metal Semiconductor Field Effect Transistors  

SciTech Connect (OSTI)

Short channel GaAs Metal Semiconductor Field Effect Transistors (MESFETs) have been fabricated with gate length to 20 nm, in order to examine the characteristics of sub-50 nm MESFET scaling. Here the rise in the measured transconductance is mainly attributed to electron velocity overshoot. For gate lengths below 40 nm, however, the transconductance drops suddenly. The behavior of velocity overshoot and its degradation is investigated and simulated by using a transport model based on the retarded Langevin equation (RLE). This indicates the existence of a minimum acceleration length needed for the carriers to reach the overshoot velocity. The argument shows that the source resistance must be included as an internal element, or appropriate boundary condition, of relative importance in any model where the gate length is comparable to the inelastic mean free path of the carriers.

Han, Jaeheon [Department of Electronic Engineering, Kangnam University, 111 Gugal-dong, Giheung-gu, Yongin-city, Gyeonggi-do, Korea 446-702 (Korea, Republic of)

2011-12-23T23:59:59.000Z

32

Thin Film Transistors On Plastic Substrates  

DOE Patents [OSTI]

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

2004-01-20T23:59:59.000Z

33

Schottky barrier source-gated ZnO thin film transistors by low temperature atomic layer deposition  

SciTech Connect (OSTI)

We have fabricated ZnO source-gated thin film transistors (SGTFTs) with a buried TiW source Schottky barrier and a top gate contact. The ZnO active channel and thin high-? HfO{sub 2} dielectric utilized are both grown by atomic layer deposition at temperatures less than 130?C, and their material and electronic properties are characterized. These SGTFTs demonstrate enhancement-mode operation with a threshold voltage of 0.91?V, electron mobility of 3.9 cm{sup 2} V{sup ?1} s{sup ?1}, and low subthreshold swing of 192?mV/decade. The devices also exhibit a unique combination of high breakdown voltages (>20?V) with low output conductances.

Ma, Alex M.; Gupta, Manisha; Shoute, Gem; Tsui, Ying Y.; Barlage, Douglas W., E-mail: barlage@ualberta.ca [Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada); Afshar, Amir; Cadien, Kenneth C. [Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada)] [Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada)

2013-12-16T23:59:59.000Z

34

High-frequency self-aligned graphene transistors with transferred gate stacks  

Science Journals Connector (OSTI)

...2009 ) Radio-frequency electrical...Epitaxial-graphene RF field-effect...2011 ) High-frequency, scaled graphene...of high-frequency measurement...Information (PDF) High-frequency self-aligned...attention for radio-frequency transistor...

Rui Cheng; Jingwei Bai; Lei Liao; Hailong Zhou; Yu Chen; Lixin Liu; Yung-Chen Lin; Shan Jiang; Yu Huang; Xiangfeng Duan

2012-01-01T23:59:59.000Z

35

Gate-Controlled Punch Through Transistor Xiangli Li, Huadian Pan, Bogdan M. Wilamowski  

E-Print Network [OSTI]

of the device are simulated using SILVACO atlas device simulator. This device shows high voltage, high operation is proposed and simulated using SILVACO atlas device simulator. The punch through transistors can be used

Wilamowski, Bogdan Maciej

36

Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks  

SciTech Connect (OSTI)

The properties of high-{kappa} metal oxide gate stacks are often determined in the final processing steps following dielectric deposition. We report here results from medium energy ion scattering and x-ray photoelectron spectroscopy studies of oxygen and silicon diffusion and interfacial layer reactions in multilayer gate stacks. Our results show that Ti metallization of HfO{sub 2}/SiO{sub 2}/Si stacks reduces the SiO{sub 2} interlayer and (to a more limited extent) the HfO{sub 2} layer. We find that Si atoms initially present in the interfacial SiO{sub 2} layer incorporate into the bottom of the high-{kappa} layer. Some evidence for Ti-Si interdiffusion through the high-{kappa} film in the presence of a Ti gate in the crystalline HfO{sub 2} films is also reported. This diffusion is likely to be related to defects in crystalline HfO{sub 2} films, such as grain boundaries. High-resolution transmission electron microscopy and corresponding electron energy loss spectroscopy scans show aggressive Ti-Si intermixing and oxygen diffusion to the outermost Ti layer, given high enough annealing temperature. Thermodynamic calculations show that the driving forces exist for some of the observed diffusion processes.

Goncharova, L. V.; Dalponte, M.; Gustafsson, T.; Celik, O.; Garfunkel, E.; Lysaght, P. S.; Bersuker, G. [Department of Physics and Astronomy, and Laboratory for Surface Modification, Rutgers University, 136 Frelinghuysen Rd., Piscataway, New Jersey 08854 (United States); Department of Chemistry and Chemical Biology, and Laboratory for Surface Modification, Rutgers University, 610 Taylor Rd., Piscataway, New Jersey 08854 (United States); SEMATECH, 2705 Montopolis Dr., Austin, Texas 78741 (United States)

2007-03-15T23:59:59.000Z

37

Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology  

E-Print Network [OSTI]

of the doped films were explained by their compositions and bond structures. The Hf-doped TaOx film is a potential high-k gate dielectric for future MOS transistors. A 5 ?? tantalum nitride (TaNx) interface layer has been inserted between the Hf-doped Ta...

Lu, Jiang

2007-04-25T23:59:59.000Z

38

Carrier mobility measurement across a single grain boundary in polycrystalline silicon using an organic gate thin-film transistor  

Science Journals Connector (OSTI)

In this study we developed a measurement method for field-effect-carrier mobility across a single grain boundary in polycrystalline Si (poly Si) used for solar cell production by using an organic gate field-effect transistor(FET). To prevent precipitation and the diffusion of impurities affecting the electronic characteristics of the grain boundary all the processing temperatures during FET fabrication were held below 150?C. From the grain boundary the field-effect mobility was measured at around 21.4 cm2/Vs at 297?K and the temperature dependence of the field-effect mobility suggested the presence of a potential barrier of 0.22?eV at the boundary. The technique presented here is applicable for the monitoring of carrier conduction characteristics at the grain boundary in poly Si used for the production of solar cells.

Masaki Hashimoto; Kensaku Kanomata; Katsuaki Momiyama; Shigeru Kubota; Fumihiko Hirose

2012-01-01T23:59:59.000Z

39

Carrier mobility measurement across a single grain boundary in polycrystalline silicon using an organic gate thin-film transistor  

SciTech Connect (OSTI)

In this study, we developed a measurement method for field-effect-carrier mobility across a single grain boundary in polycrystalline Si (poly Si) used for solar cell production by using an organic gate field-effect transistor (FET). To prevent precipitation and the diffusion of impurities affecting the electronic characteristics of the grain boundary, all the processing temperatures during FET fabrication were held below 150 deg. C. From the grain boundary, the field-effect mobility was measured at around 21.4 cm{sup 2}/Vs at 297 K, and the temperature dependence of the field-effect mobility suggested the presence of a potential barrier of 0.22 eV at the boundary. The technique presented here is applicable for the monitoring of carrier conduction characteristics at the grain boundary in poly Si used for the production of solar cells.

Hashimoto, Masaki; Kanomata, Kensaku; Momiyama, Katsuaki; Kubota, Shigeru; Hirose, Fumihiko

2012-01-09T23:59:59.000Z

40

Using SPICE for the modelization of the static behaviour of the insulated gate transistor  

E-Print Network [OSTI]

the influence ofthe electrical parameters of the model, and thus, to infer the technolo- gical parameters PNP structure and the resistivity of the lightly doped layer is so modulated by the injection of holes coming from the anode. Due to this resistivity modulation and to the current gain of the PNP transistor

Boyer, Edmond

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41

High performance organic field-effect transistors with ultra-thin HfO{sub 2} gate insulator deposited directly onto the organic semiconductor  

SciTech Connect (OSTI)

We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO{sub 2} gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm{sup 2}/V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO{sub 2} layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor.

Ono, S., E-mail: shimpei@criepi.denken.or.jp [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan); Husermann, R. [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan) [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan); Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland); Chiba, D. [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan) [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 322-0012 (Japan); Department of Applied Physics, University of Tokyo, Tokyo 113-8656 (Japan); Shimamura, K.; Ono, T. [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)] [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); Batlogg, B. [Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland)] [Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland)

2014-01-06T23:59:59.000Z

42

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network [OSTI]

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

43

L{sub g}?=?100?nm In{sub 0.7}Ga{sub 0.3}As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer  

SciTech Connect (OSTI)

In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In{sub 0.53}Ga{sub 0.47}As MOS capacitors with BeO and Al{sub 2}O{sub 3} and compared their electrical characteristics. As interface passivation layer, BeO/HfO{sub 2} bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In{sub 0.7}Ga{sub 0.3}As QW MOSFETs with a BeO/HfO{sub 2} dielectric, showing a sub-threshold slope of 100?mV/dec, and a transconductance (g{sub m,max}) of 1.1 mS/?m, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for IIIV MOSFETs at the 7?nm technology node and/or beyond.

Koh, D., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); SEMATECH, Inc., Albany, New York 12203 (United States); Kwon, H. M. [Department of Electronics Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Kim, T.-W., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org; Veksler, D.; Gilmer, D.; Kirsch, P. D. [SEMATECH, Inc., Albany, New York 12203 (United States); Kim, D.-H. [SEMATECH, Inc., Albany, New York 12203 (United States); GLOBALFOUNDRIES, Malta, New York 12020 (United States); Hudnall, Todd W. [Department of Chemistry and Biochemistry, Texas State University, San Marcos, Texas, 78666 (United States); Bielawski, Christopher W. [Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712 (United States); Maszara, W. [GLOBALFOUNDRIES, Santa Clara, California 95054 (United States); Banerjee, S. K. [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)

2014-04-21T23:59:59.000Z

44

Case Studies on Variation Tolerant and Low Power Design Using Planar Asymmetric Double Gate Transistor  

E-Print Network [OSTI]

new circuit topology for IGFET, which on average shows 33.8% lower leakage and 34.9% lower area at the cost of 2.8% increase in total active mode power, for basic logic gates. Finally, we showed a technique for reducing leakage of minimum sized... ????????????????????????????????????????????????? 5 III.1 Power-delay product for FO4 inverter ????????????????????????????????????? 12 III.2 Power-delay product for 51 Stage ring oscillator ??????????????????????????? 12 IV.1 Delay distribution histogram...

Singh, Amrinder

2011-10-21T23:59:59.000Z

45

Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors  

SciTech Connect (OSTI)

In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

Yang, Jyun-Bao; Chen, Yu-Ting; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Huang, Jheng-Jie; Chen, Yu-Chun; Tseng, Hsueh-Chih [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Sze, Simon M. [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China)

2014-04-14T23:59:59.000Z

46

Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement  

SciTech Connect (OSTI)

Two-dimensional current collapse imaging of a Schottky gate AlGaN/GaN high electron mobility transistor device was achieved by optical electric field-induced second-harmonic generation (EFISHG) measurements. EFISHG measurements can detect the electric field produced by carriers trapped in the on-state of the device, which leads to current collapse. Immediately after (e.g., 1, 100, or 800??s) the completion of drain-stress voltage (200?V) in the off-state, the second-harmonic (SH) signals appeared within 2??m from the gate edge on the drain electrode. The SH signal intensity became weak with time, which suggests that the trapped carriers are emitted from the trap sites. The SH signal location supports the well-known virtual gate model for current collapse.

Katsuno, Takashi, E-mail: e1417@mosk.tytlabs.co.jp; Ishikawa, Tsuyoshi; Ueda, Hiroyuki; Uesugi, Tsutomu [Toyota Central R and D Laboratories Inc., Nagakute, Aichi 480-1192 (Japan); Manaka, Takaaki; Iwamoto, Mitsumasa [Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552 (Japan)

2014-06-23T23:59:59.000Z

47

Improved Stability Of Amorphous Zinc Tin Oxide Thin Film Transistors...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Instruments: Ultra-high Vacuum, Low-temperature Scanning Probe Microscope Instrument, or UHV LT SPM Tags: oxides ultra-high vacuum UHV VT SPM atomic-resolution imaging structural...

48

Electro-oxidized Epitaxial Graphene Channel Field-Effect Transistors with Single-Walled Carbon Nanotube Thin Film  

E-Print Network [OSTI]

Electro-oxidized Epitaxial Graphene Channel Field-Effect Transistors with Single-Walled Carbon on the electronic properties of epitaxial graphene (EG) grown on silicon carbide substrates; we demonstrate the introduction of the reaction medium into the graphene galleries during electro-oxidation. The device

49

Radiation-hardened transistor and integrated circuit  

DOE Patents [OSTI]

A composite transistor is disclosed for use in radiation hardening a CMOS IC formed on an SOI or bulk semiconductor substrate. The composite transistor has a circuit transistor and a blocking transistor connected in series with a common gate connection. A body terminal of the blocking transistor is connected only to a source terminal thereof, and to no other connection point. The blocking transistor acts to prevent a single-event transient (SET) occurring in the circuit transistor from being coupled outside the composite transistor. Similarly, when a SET occurs in the blocking transistor, the circuit transistor prevents the SET from being coupled outside the composite transistor. N-type and P-type composite transistors can be used for each and every transistor in the CMOS IC to radiation harden the IC, and can be used to form inverters and transmission gates which are the building blocks of CMOS ICs.

Ma, Kwok K. (Albuquerque, NM)

2007-11-20T23:59:59.000Z

50

Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures  

SciTech Connect (OSTI)

We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm{sup 2} V{sup ?1} s{sup ?1} at low operating voltages (<5?V) in air. We further show that the SWCNT-ZTO hybrid ambipolar FETs can be integrated into functional inverter circuits that display high peak gain (>10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures.

Kim, Bongjun; Jang, Seonpil; Dodabalapur, Ananth, E-mail: ananth.dodabalapur@engr.utexas.edu [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Geier, Michael L.; Prabhumirashi, Pradyumna L. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Hersam, Mark C. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States); Department of Medicine, Northwestern University, Evanston, Illinois 60208 (United States)

2014-02-10T23:59:59.000Z

51

Part I:Part I: Degradation in 3.2 nm Gate Oxides:Degradation in 3.2 nm Gate Oxides: Effects on Inverter Performance and MOSFETEffects on Inverter Performance and MOSFET  

E-Print Network [OSTI]

on Inverter Performance and MOSFETEffects on Inverter Performance and MOSFET Characteristics.2 nm Gate Oxides: Effects on Inverter Performance and MOSFETEffects on Inverter Performance and MOSFET

Anlage, Steven

52

Chemoresponsive monolayer transistors Xuefeng Guo*  

E-Print Network [OSTI]

in the gap and form transistors with large current modulation and high gate efficiency. Because these devices and drain (S D) electrodes, transistors can be made that have high gate efficiency and large ON OFF ratios; and §Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY 11973 Edited

Hone, James

53

Prototypical Single-Molecule Chemical-Field-Effect Transistor with Nanometer-Sized Gates F. Jackel,1  

E-Print Network [OSTI]

or break junctions [7,8]. Field effect transistors have been fabricated with carbon nanotubes [9 defects in carbon nanotube field effect tran- sistors [13]. Under ultrahigh vacuum (UHV) conditions and a voltage ramp with 100 equidistant points between ÿ1:5 and 1.5 V was run with the feedback loop switched

Peters, Achim

54

Impact of SF{sub 6} plasma treatment on performance of TaN-HfO{sub 2}-InP metal-oxide-semiconductor field-effect transistor  

SciTech Connect (OSTI)

In this work, the experimental impact of SF{sub 6} plasma treatment on the performance of InP metal-oxide-semiconductor field-effect transistors is presented. S and F are incorporated into atomic layer deposited HfO{sub 2} via postgate SF{sub 6} plasma treatment. The decreased subthreshold swing, gate leakage (I{sub g}), and increased effective channel mobility ({mu}{sub eff}) indicate that better interface and bulk oxide quality have been achieved with SF{sub 6} plasma treatment due to the formation of stronger Hf-F bonds. Drive current (I{sub d}), transconductance (G{sub m}), and effective channel mobility ({mu}{sub eff}) are improved by 22.3%, 35%, and 35%, respectively, compared with those of control devices.

Wang Yanzhen; Chen Yenting; Zhao Han; Xue Fei; Zhou Fei; Lee, Jack C. [Department of Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78758 (United States)

2011-01-24T23:59:59.000Z

55

SiC Power MOSFET with Improved Gate Dielectric  

SciTech Connect (OSTI)

In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

Sbrockey, Nick M; Tompa, Gary S; Spencer, Michael G; Chandrashekhar, Chandra MVS

2010-08-23T23:59:59.000Z

56

ESS 2012 Peer Review - Engineered Gate Oxides for Wide Bandgap Semiconductor MOSFETs - Jon Ihlefeld, SNL  

Broader source: Energy.gov (indexed) [DOE]

-5 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 -6 -4 -2 0 2 4 6 8 10 |J Leakage | (A-cm -2 ) Semiconductor Voltage (V) Engineered Gate Oxides for Wide Bandgap S emiconductor M OSFETs* Jon I hlefeld, M ichael B rumbach, S andeepan D asGupta, and Stanley AtciEy Sandia NaGonal Laboratories *Sponsored b y t he U .S. D epartment o f E nergy's O ffice o f E lectricity E nergy S torage Systems P rogram jihlefe@sandia.gov, 505---844---3162; s atciE@sandia.gov, 505---284---2701 Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. SAND No. 2011-XXXXP Cooling Power electronics Energy storage Energy storage -V gate Low defect oxide Metal gate Wide

57

Charge Noise in Graphene Transistors Iddo Heller,,  

E-Print Network [OSTI]

Charge Noise in Graphene Transistors Iddo Heller,,§ Sohail Chatoor, Jaan Ma¨nnik, Marcel A. G an experimental study of 1/f noise in liquid-gated graphene transistors. We show that the gate dependence to the graphene, while at high carrier density it is consistent with noise due to scattering in the channel

Dekker, Cees

58

Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO{sub 2} structure using fast I-V measurement  

SciTech Connect (OSTI)

This letter investigates abnormal negative threshold voltage shifts under positive bias stress in input/output (I/O) TiN/HfO{sub 2} n-channel metal-oxide-semiconductor field-effect transistors using fast I-V measurement. This phenomenon is attributed to a reversible charge/discharge effect in pre-existing bulk traps. Moreover, in standard performance devices, threshold-voltage (V{sub t}) shifts positively during fast I-V double sweep measurement. However, in I/O devices, V{sub t} shifts negatively since electrons escape from bulk traps to metal gate rather than channel electrons injecting to bulk traps. Consequently, decreasing pre-existing bulk traps in I/O devices, which can be achieved by adopting Hf{sub x}Zr{sub 1?x}O{sub 2} as gate oxide, can reduce the charge/discharge effect.

Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw; Lu, Ying-Hsin; Tsai, Jyun-Yu; Liu, Kuan-Ju [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen [Device Department, United Microelectronics Corporation, Tainan Science Park, Taiwan (China)

2014-03-17T23:59:59.000Z

59

E-Print Network 3.0 - aluminum oxide gate Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

2 Charge Trapping Characteristics of SONOS Capacitors with Control Gates of Different Work Functions during ProgramErase Operations Summary: ABSTRACT The control gate...

60

Toward Active-Matrix Lab-On-A-Chip: Programmable Electrofluidic control Enaled by Arrayed Oxide Thin Film Transistors  

SciTech Connect (OSTI)

Agile micro- and nano-fluidic control is critical to numerous life science and chemical science synthesis as well as kinetic and thermodynamic studies. To this end, we have demonstrated the use of thin film transistor arrays as an active matrix addressing method to control an electrofluidic array. Because the active matrix method minimizes the number of control lines necessary (m + n lines for the m x n element array), the active matrix addressing method integrated with an electrofluidic platform can be a significant breakthrough for complex electrofluidic arrays (increased size or resolution) with enhanced function, agility and programmability. An amorphous indium gallium zinc oxide (a-IGZO) semiconductor active layer is used because of its high mobility of 1-15 cm{sup 2} V{sup -1} s{sup -1}, low-temperature processing and transparency for potential spectroscopy and imaging. Several electrofluidic functionalities are demonstrated using a simple 2 x 5 electrode array connected to a 2 x 5 IGZO thin film transistor array with the semiconductor channel width of 50 {mu}m and mobility of 6.3 cm{sup 2} V{sup -1} s{sup -1}. Additionally, using the TFT device characteristics, active matrix addressing schemes are discussed as the geometry of the electrode array can be tailored to act as a storage capacitor element. Finally, requisite material and device parameters are discussed in context with a VGA scale active matrix addressed electrofluidic platform.

Noh, Joo Hyon [University of Tennessee, Knoxville (UTK); Noh, Jiyong [University of Tennessee, Knoxville (UTK); Kreit, Eric [University of Cincinnati; Heikenfeld, Jason [University of Cincinnati; Rack, Philip D [ORNL

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Gate Metal-Induced Diffusion and Interface Reactions in Hf Oxide Films on Si  

SciTech Connect (OSTI)

When metal electrodes are deposited on a high-{kappa} metal-oxide/SiO{sub 2}/Si stack, chemical interactions may occur both at the metal/high-{kappa} and the high-{kappa}/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO{sub 2}/SiO{sub 2}/Si stacks causes reduction of the SiO{sub 2} interfacial layer and (to a lesser extent) the HfO{sub 2} layer. Silicon atoms initially present in the interfacial SiO{sub 2} layer incorporate into the bottom of the high-{kappa} layer. Some evidence for titanium-silicon interdiffusion through the high-{kappa} film in the presence of a titanium gate in crystalline HfO{sub 2} films is also reported.

Goncharova, Lyudmila V.; Dalponte, Mateus; Celik, Ozgur; Garfunkel, Eric; Gustafsson, Torgny [Departments of Physics and Chemistry, and Laboratory for Surface Modification, Rutgers University, Piscataway, NJ 08854 (United States); Lysaght, Pat S.; Bersuker, Gennadi I. [Sematech, Austin, Texas 78741 (United States)

2007-09-26T23:59:59.000Z

62

Abstract--Bias temperature instability, hot-carrier injection, and gate-oxide wearout will cause severe lifetime degradation in  

E-Print Network [OSTI]

Abstract--Bias temperature instability, hot-carrier injection, and gate-oxide wearout will cause mechanisms are bias temperature instability (BTI) [1] and hot-carrier injection (HCI) [2], both of which can is compounded by thermal feedback, since active devices located at die hot spots operate at an elevated

Lipasti, Mikko H.

63

Zirconium-doped tantalum oxide high-k gate dielectric films  

E-Print Network [OSTI]

layer formation and properties were studied with or without an inserted thin tantalum nitride (TaNx) layer. The gate electrode material influence on the dielectric properties was also investigated. Four types of gate materials, i.e., aluminum (Al...

Tewg, Jun-Yen

2005-02-17T23:59:59.000Z

64

Low temperature lithographically patterned metal oxide transistors for large area electronics  

E-Print Network [OSTI]

Optically transparent, wide bandgap metal oxide semiconductors are a promising candidate for large-area electronics technologies that require lightweight, temperature-sensitive flexible substrates. Because these thin films ...

Wang, Annie I. (Annie I-Jen), 1981-

2011-01-01T23:59:59.000Z

65

Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films  

E-Print Network [OSTI]

nanoparticles. These results can be important to the novel metal gate/high-k/Si MOS structure. The Ru-modified ZrHfO gate dielectric film showed a large breakdown voltage and a long lifetime. The conventional polycrystalline Si (poly-Si) charge trapping layer...

Lin, Chen-Han

2012-10-19T23:59:59.000Z

66

Gate potential control of nanofluidic devices  

E-Print Network [OSTI]

The effect of an external gate potential control on the nanofluidic nanochannels was experimentally investigated in this work. Like in the field effect transistors (FET) in microelectronics, molecular transport in ...

Le Coguic, Arnaud

2005-01-01T23:59:59.000Z

67

Effective phase control of silicon films during high-rate deposition in atmospheric-pressure very high-frequency plasma: Impacts of gas residence time on the performance of bottom-gate thin film transistors  

Science Journals Connector (OSTI)

Abstract Hydrogenated amorphous silicon (a-Si) and microcrystalline silicon (?c-Si) films were grown in atmospheric-pressure (AP) He/H2/SiH4 plasma excited by a 150-MHz very high-frequency (VHF) power at a temperature of 220C. The variations in thickness and crystallinity of the deposited Si films along the gas flow direction were studied as functions of gas residence time in the plasma, VHF power density and H2 flow rate. Furthermore, the electrical characteristics of bottom-gate thin film transistors (TFTs) were investigated to evaluate the film quality. The results revealed that the chemical reactions both in gas phase and on the growing film surface were significantly enhanced in AP-VHF plasma, promoting phase transition from amorphous to microcrystalline in a time of the order of 0.1ms. The performance of the \\{TFTs\\} showed that a-Si layers formed in the upstream portion of the plasma zone had reasonably good electrical property (field-effect mobility of approximately 2cm2/Vs) despite very high deposition rates around 20nm/s. While ?c-Si layers deposited in the downstream portion were very defective, which might come from the insufficient passivation of grain boundaries with a-Si tissues due to a too long gas residence time in the plasma. The precise control of gas residence time by adjusting the length of plasma will be effective for the phase control of Si films with desired quality.

H. Kakiuchi; H. Ohmi; T. Yamada; A. Hirano; T. Tsushima; W. Lin; K. Yasutake

2013-01-01T23:59:59.000Z

68

Low-Cost Label-Free Electrical Detection of Artificial DNA Nanostructures Using Solution-Processed Oxide Thin-Film Transistors  

Science Journals Connector (OSTI)

As stabilizers, monoethanolamine (MEA) and acetic acid (CH3COOH) were dropped to ameliorate the solubility of the precursors and make a homogeneous IGZO solution, respectively. ... Prepared DNA-covered mica sheet was attached onto the metal puck using instant glue and 5 ?L of DX solution, 30 ?L of 1 TAE/Mg2+ buffer was dropped onto the mica and 10 ?L of 1 TAE/Mg2+ buffer was mounted onto the AFM tip (A NP-S oxide-sharpened silicon nitride tip). ... The original influence of water on the back-channel of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors was studied in various relative humidity environments. ...

Si Joon Kim; Joohye Jung; Keun Woo Lee; Doo Hyun Yoon; Tae Soo Jung; Sreekantha Reddy Dugasani; Sung Ha Park; Hyun Jae Kim

2013-09-27T23:59:59.000Z

69

On the electrical stress-induced oxide-trapped charges in thin HfO{sub 2}/SiO{sub 2} gate dielectric stack  

SciTech Connect (OSTI)

Oxide charge buildup and its generation kinetics during constant voltage stress in TaN/HfO{sub 2}/SiO{sub 2}/p-Si structures have been experimentally investigated. From the oxide charge relaxation experiments, nature and energy location of the as-fabricated intrinsic hole traps in the gate stack have also been determined. Our measurement results indicate that the dispersive proton transport through the interfacial SiO{sub 2} contributes larger than hole trapping in positive charge buildup in the stack. From the bias temperature stress measurement results in both control oxide and HfO{sub 2}/SiO{sub 2} stacks, we have identified overcoordinated [Si{sub 2}=OH]{sup +} centers as the proton-induced defects located in the interfacial SiO{sub 2} layer of the stack. Finally, an empirical equation is proposed to explain the stress-induced oxide positive charge buildup.

Samanta, Piyas; Zhu Chunxiang; Chan, Mansun [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay Road, Kowloon, Hong Kong (China); Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 (Singapore); Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay Road, Kowloon, Hong Kong (China)

2007-09-10T23:59:59.000Z

70

Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)  

SciTech Connect (OSTI)

Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

2008-10-31T23:59:59.000Z

71

Thin-film transistors based on p-type Cu{sub 2}O thin films produced at room temperature  

SciTech Connect (OSTI)

Copper oxide (Cu{sub 2}O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu{sub 2}O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm{sup 2}/V s and an on/off ratio of 2x10{sup 2}.

Fortunato, Elvira; Figueiredo, Vitor; Barquinha, Pedro; Elamurugu, Elangovan; Goncalves, Goncalo; Martins, Rodrigo [Departamento de Ciencia dos Materiais, CENIMAT/I3N, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, 2829-516 Caparica (Portugal); Barros, Raquel [Departamento de Ciencia dos Materiais, CENIMAT/I3N, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, 2829-516 Caparica (Portugal); Materiais Avancados, INNOVNANO, SA, 7600-095 Aljustrel (Portugal); Park, Sang-Hee Ko; Hwang, Chi-Sun [Electronic and Telecommunications Research Institute, 138 Gajeongro, Yuseong-gu, Daejeon, 305-700 (Korea, Republic of)

2010-05-10T23:59:59.000Z

72

Femtosecond all-optical parallel logic gates based on tunable saturable to reverse saturable absorption in graphene-oxide thin films  

SciTech Connect (OSTI)

A detailed theoretical analysis of ultrafast transition from saturable absorption (SA) to reverse saturable absorption (RSA) has been presented in graphene-oxide thin films with femtosecond laser pulses at 800?nm. Increase in pulse intensity leads to switching from SA to RSA with increased contrast due to two-photon absorption induced excited-state absorption. Theoretical results are in good agreement with reported experimental results. Interestingly, it is also shown that increase in concentration results in RSA to SA transition. The switching has been optimized to design parallel all-optical femtosecond NOT, AND, OR, XOR, and the universal NAND and NOR logic gates.

Roy, Sukhdev, E-mail: sukhdevroy@dei.ac.in; Yadav, Chandresh [Department of Physics and Computer Science, Dayalbagh Educational Institute, Dayalbagh, Agra 282 005 (India)] [Department of Physics and Computer Science, Dayalbagh Educational Institute, Dayalbagh, Agra 282 005 (India)

2013-12-09T23:59:59.000Z

73

A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors  

SciTech Connect (OSTI)

In this paper, we present a methodology for the identification and quantification of defects responsible for low channel mobility in 4H-Silicon Carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs). To achieve this, we use an algorithm based on 2D-device simulations of a power MOSFET, density functional simulations, and measurement data. Using physical modeling of carrier mobility and interface traps, we reproduce the experimental I-V characteristics of a 4H-SiC doubly implanted MOSFET through drift-diffusion simulation. We extract the position of Fermi level and the occupied trap density as a function of applied bias and temperature. Using these inputs, our algorithm estimates the number of possible trap types, their energy levels, and concentrations at 4H-SiC/SiO{sub 2} interface. Subsequently, we use density functional theory (DFT)-based ab initio simulations to identify the atomic make-up of defects causing these trap levels. We study silicon vacancy and carbon di-interstitial defects in the SiC side of the interface. Our algorithm indicates that the D{sub it} spectrum near the conduction band edge (3.25?eV) is composed of three trap types located at 2.82.85?eV, 3.05?eV, and 3.13.2?eV, and also calculates their densities. Based on DFT simulations, this work attributes the trap levels very close to the conduction band edge to the C di-interstitial defect.

Ettisserry, D. P., E-mail: deva@umd.edu; Goldsman, N. [Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20742 (United States); Lelis, A. [U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States)

2014-03-14T23:59:59.000Z

74

Sample size requirements for estimating effective dose from computed tomography using solid-state metal-oxide-semiconductor field-effect transistor dosimetry  

SciTech Connect (OSTI)

Purpose: Effective dose (ED) is a widely used metric for comparing ionizing radiation burden between different imaging modalities, scanners, and scan protocols. In computed tomography (CT), ED can be estimated by performing scans on an anthropomorphic phantom in which metal-oxide-semiconductor field-effect transistor (MOSFET) solid-state dosimeters have been placed to enable organ dose measurements. Here a statistical framework is established to determine the sample size (number of scans) needed for estimating ED to a desired precision and confidence, for a particular scanner and scan protocol, subject to practical limitations. Methods: The statistical scheme involves solving equations which minimize the sample size required for estimating ED to desired precision and confidence. It is subject to a constrained variation of the estimated ED and solved using the Lagrange multiplier method. The scheme incorporates measurement variation introduced both by MOSFET calibration, and by variation in MOSFET readings between repeated CT scans. Sample size requirements are illustrated on cardiac, chest, and abdomenpelvis CT scans performed on a 320-row scanner and chest CT performed on a 16-row scanner. Results: Sample sizes for estimating ED vary considerably between scanners and protocols. Sample size increases as the required precision or confidence is higher and also as the anticipated ED is lower. For example, for a helical chest protocol, for 95% confidence and 5% precision for the ED, 30 measurements are required on the 320-row scanner and 11 on the 16-row scanner when the anticipated ED is 4 mSv; these sample sizes are 5 and 2, respectively, when the anticipated ED is 10 mSv. Conclusions: Applying the suggested scheme, it was found that even at modest sample sizes, it is feasible to estimate ED with high precision and a high degree of confidence. As CT technology develops enabling ED to be lowered, more MOSFET measurements are needed to estimate ED with the same precision and confidence.

Trattner, Sigal [Department of Medicine, Division of Cardiology, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York 10032 (United States)] [Department of Medicine, Division of Cardiology, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York 10032 (United States); Cheng, Bin [Department of Biostatistics, Columbia University Mailman School of Public Health, New York, New York 10032 (United States)] [Department of Biostatistics, Columbia University Mailman School of Public Health, New York, New York 10032 (United States); Pieniazek, Radoslaw L. [Center for Radiological Research, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York 10032 (United States)] [Center for Radiological Research, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York 10032 (United States); Hoffmann, Udo [Department of Radiology, Massachusetts General Hospital and Harvard Medical School, Boston, Massachusetts 02114 (United States)] [Department of Radiology, Massachusetts General Hospital and Harvard Medical School, Boston, Massachusetts 02114 (United States); Douglas, Pamela S. [Department of Medicine, Division of Cardiology, Duke University, Durham, North Carolina 27715 (United States)] [Department of Medicine, Division of Cardiology, Duke University, Durham, North Carolina 27715 (United States); Einstein, Andrew J., E-mail: andrew.einstein@columbia.edu [Department of Medicine, Division of Cardiology, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York and Department of Radiology, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York (United States)

2014-04-15T23:59:59.000Z

75

Photoresponsive nanoscale columnar transistors  

Science Journals Connector (OSTI)

...2C shows an optical micrograph...devices used. Thin film transistors...2D shows an optical micrograph of the...either spin-coating or drop-casting...broad potential applications in ultrasensitive...deposition (CVD) process from...P ( 2003 ) Thin-Film Transistors...self-assembled nano optical switcher and transistor...

Xuefeng Guo; Shengxiong Xiao; Matthew Myers; Qian Miao; Michael L. Steigerwald; Colin Nuckolls

2009-01-01T23:59:59.000Z

76

Convex Delay Models for Transistor Sizing Mahesh Ketkar  

E-Print Network [OSTI]

for developing accurate con- vex delay models to be used for transistor sizing. A new rich class of convex]: minimize Area or Power subject to Delay Tspec: (1) There have been many significant attempts to solve. in the development of closed form models for inverters and then mapping other gates to an equivalent inverter [5, 6

Sapatnekar, Sachin

77

Bounding the total-dose response of modern bipolar transistors  

SciTech Connect (OSTI)

The base current in modern bipolar transistors saturates at large total doses once a critical oxide charge is reached. The saturated value of base current is dose-rate independent. Testing implications are discussed.

Kosier, S.L.; Wei, A.; Schrimpf, R.D. [Arizona Univ., Tucson, AZ (United States). Dept. of Electrical and Computer Engineering; Combs, W.E. [Naval Surface Warfare Center-Crane, Crane, IN (United States); Fleetwood, D.M. [Sandia National Labs., Albuquerque, NM (United States); DeLaus, M. [Analog Devices, Inc., Wilmington, MA (United States); Pease, R.L. [RLP Research, Albuquerque, NM (United States)

1994-03-01T23:59:59.000Z

78

Membrane-Transistor Cable  

Science Journals Connector (OSTI)

Membrane-Transistor Cable ... The system is the basis for a development of bioelectronic transducers and for the study of nonlinear phenomena in membrane cables. ...

Marion Rentschler; Peter Fromherz

1998-01-20T23:59:59.000Z

79

Probing Organic Transistors with Infrared Beams  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Probing Organic Transistors with Infrared Beams Probing Organic Transistors with Infrared Beams Print Wednesday, 26 July 2006 00:00 Silicon-based transistors are well-understood,...

80

IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 2, FEBRUARY 2008 183 Externally Assembled Gate-All-Around Carbon  

E-Print Network [OSTI]

-All-Around Carbon Nanotube Field-Effect Transistor Zhihong Chen, Member, IEEE, Damon Farmer, Sheng Xu, Roy Gordon USA (e-mail: zchen@us.ibm.com; avouris@ us.ibm.com). D. Farmer is with the School of Engineering demonstrate a gate-all-around single- wall carbon nanotube field-effect transistor. This is the first suc

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

A CMOS neuroelectronic interface based on two-dimensional transistor arrays with monolithically-integrated circuitry  

Science Journals Connector (OSTI)

The ability to monitor and to elicit neural activity with a high spatiotemporal resolution has grown essential for studying the functionality of neuronal networks. Although a variety of microelectrode arrays (MEAs) has been proposed, very few \\{MEAs\\} are integrated with signal-processing circuitry. As a result, the maximum number of electrodes is limited by routing complexity, and the signal-to-noise ratio is degraded by parasitics and noise interference. This paper presents a single-chip neuroelectronic interface integrating oxide-semiconductor field-effect transistors (OSFETs) with signal-processing circuitry. After the chip was fabricated with the standard complementary-metal-oxide-semiconductor (CMOS) process, polygates of specific transistors were etched at die-level to form OSFETs, while metal layers were retained to connect the \\{OSFETs\\} into two-dimensional arrays. The complete removal of polygates was confirmed by high-resolution image scanners, and the reliability of \\{OSFETs\\} was examined by measuring their electrical characteristics. Through a gate oxide of only 7nm thick, each OSFET can record and stimulate neural activity extracellularly by capacitive coupling. The capability of the full chip in neural recording and stimulation was further experimented using the well-characterised escape circuit of the crayfish. Experimental results indicate that the OSFET-based neuroelectronic interface can be used to study neuronal networks as faithfully as conventional electrophysiological tools. Moreover, the proposed simple, die-level fabrication process of the \\{OSFETs\\} underpins the development of various field-effect biosensors on a large scale with on-chip circuitry.

C.H. Chang; S.R. Chang; J.S. Lin; Y.T. Lee; S.R. Yeh; H. Chen

2009-01-01T23:59:59.000Z

82

Method for formation of thin film transistors on plastic substrates  

DOE Patents [OSTI]

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

1998-10-06T23:59:59.000Z

83

Method for formation of thin film transistors on plastic substrates  

DOE Patents [OSTI]

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

1998-10-06T23:59:59.000Z

84

Persistent photoconductivity effects in printed n-channel organic transistors  

Science Journals Connector (OSTI)

Persistent photoconductivity of top-gate n-type organic transistors is investigated. The irradiation of green light leads to a negative shift in transistor threshold voltage and an increase in sub-threshold current. These light-induced effects are enhanced when the gate is negatively biased during the light irradiation and the recovery process is faster at 60?C than at 25?C. After storage in dark full recovery is obtained for a transistor printed with a neat semiconductor whereas for the device printed with a solution of the same semiconductor mixed with an insulator only partial recovery is observed after four days at room temperature. Other stress conditions (irradiation with a positive gate bias irradiation without bias and bias under dark) do not change the threshold voltage or the sub-threshold current significantly. We attribute this photo phenomenon to holes trapped and released at the dielectric/semiconductor interface and a smaller number of positive fixed charges generated in the bulk of the semiconductor layer.

Tse Nga Ng; Robert A. Street

2013-01-01T23:59:59.000Z

85

Application of the FETMOS transistor as a quasi-analog storage element  

E-Print Network [OSTI]

Tuneable Reference Current Generator. . . . . . 39 D. l Bias Arrangement For Threshold Voltage Measurement. . . . . . 62 D. 2 Example of Ids vs Vgs Plot Used To Measure Threshold Voltage . . . . . . . . 62 CHAPTER I INTRODUCTION hang and Sze of... to channel length ratio as defined by the source/drain regions and the floating gate. Vos is the contml gate to source bias Vr is the apparent threshold voltage for the transistor, and Vns is the drain to source bias. Appendix C contains a cotnplete...

Sweeney, John Hillabrant

2012-06-07T23:59:59.000Z

86

p Channel thin lm transistor and complementary metaloxidesilicon inverter made of microcrystalline silicon  

E-Print Network [OSTI]

p Channel thin ®lm transistor and complementary metal±oxide±silicon inverter made ®lm transistor (TFT) made of directly deposited microcrystalline silicon (lc-Si). The lc-Si channel°C. By integrating this p TFT on a single lc-Si ®lm with an n channel TFT, we fabricated

87

East Gate  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

East East Gate to: Rt. 59 Fermilab Village Main Entrance B u tt e r fi e ld R d . to: Farnsworth Ave, I-88 Kirk Rd. Site 56 Site 55 Buffalo Farm Lederman Science Center (Public Welcome) Prairie Trails Dog Training Area Nature Area Lake Law A.E. Sea Technical Division Illinois Accelerator Research Center Feynman Computing Center Muon Delivery Ring Main Injector Tevatron Test Accelerators Site 37 Site 39 Site 38 Neutrino Experiments Silicon Detector Facility Test Beam Facility DAB Site 50 Wilson Hall & Ramsey Auditorium (Public Welcome) Wilson St. Gate (Deliveries, Employees) NML CMTF A 1 R D D R D B RD S E O LA R D B A T A V I A R D E WILSON ST WILSON ST P IN E S T P O W E R L I N E R D N E O LA R D MCCHESNEY RD A B C D E 5 4 3 2 1 ´ 0 0.5 1 0.25 Miles Trails Public Areas Buildings Roads/Parking Ponds Fermi National Accelerator Laboratory 2013 Fermilab Site Map

88

Quantum Behavior of Graphene Transistors near the Scaling Limit Yanqing Wu,,  

E-Print Network [OSTI]

Quantum Behavior of Graphene Transistors near the Scaling Limit Yanqing Wu,, * Vasili Perebeinos properties of graphene have been a key research focus for the past few years. However, external components interference effects were demonstrated in graphene heterojunctions formed by a top gate. Here phase coherent

Perebeinos, Vasili

89

Mechanisms for plasma etching of HfO{sub 2} gate stacks with Si selectivity and photoresist trimming  

SciTech Connect (OSTI)

To minimize leakage currents resulting from the thinning of the insulator in the gate stack of field effect transistors, high-dielectric constant (high-k) metal oxides, and HfO{sub 2} in particular, are being implemented as a replacement for SiO{sub 2}. To speed the rate of processing, it is desirable to etch the gate stack (e.g., metal gate, antireflection layers, and dielectric) in a single process while having selectivity to the underlying Si. Plasma etching using Ar/BCl{sub 3}/Cl{sub 2} mixtures effectively etches HfO{sub 2} while having good selectivity to Si. In this article, results from integrated reactor and feature scale modeling of gate-stack etching in Ar/BCl{sub 3}/Cl{sub 2} plasmas, preceded by photoresist trimming in Ar/O{sub 2} plasmas, are discussed. It was found that BCl{sub n} species react with HfO{sub 2}, which under ion impact, form volatile etch products such as B{sub m}OCl{sub n} and HfCl{sub n}. Selectivity to Si is achieved by creating Si-B bonding as a precursor to the deposition of a BCl{sub n} polymer which slows the etch rate relative to HfO{sub 2}. The low ion energies required to achieve this selectivity then challenge one to obtain highly anisotropic profiles in the metal gate portion of the stack. Validation was performed with data from literature. The effect of bias voltage and key reactant probabilities on etch rate, selectivity, and profile are discussed.

Shoeb, Juline; Kushner, Mark J. [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2009-11-15T23:59:59.000Z

90

Gating of Permanent Molds for ALuminum Casting  

SciTech Connect (OSTI)

This report summarizes a two-year project, DE-FC07-01ID13983 that concerns the gating of aluminum castings in permanent molds. The main goal of the project is to improve the quality of aluminum castings produced in permanent molds. The approach taken was determine how the vertical type gating systems used for permanent mold castings can be designed to fill the mold cavity with a minimum of damage to the quality of the resulting casting. It is evident that somewhat different systems are preferred for different shapes and sizes of aluminum castings. The main problems caused by improper gating are entrained aluminum oxide films and entrapped gas. The project highlights the characteristic features of gating systems used in permanent mold aluminum foundries and recommends gating procedures designed to avoid common defects. The study also provides direct evidence on the filling pattern and heat flow behavior in permanent mold castings.

David Schwam; John F. Wallace; Tom Engle; Qingming Chang

2004-03-30T23:59:59.000Z

91

Probing Organic Transistors with Infrared Beams  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Probing Organic Transistors with Infrared Beams Print Silicon-based transistors are well-understood, basic components of contemporary electronic technology. In contrast, there is...

92

Electroluminescence in ion gel gated organic polymer semiconductor transistors  

E-Print Network [OSTI]

Harsha (N. Shastri), without whom I wouldnt call myself complete, and am filled with gratitude to the cause that has brought us together, be it the god or that nature of probability function or the free will. Abstract This thesis reports the light... . The presence of a positive or negative charge causes a local structural relaxation of the polymer chain around the charge due to electron-phonon coupling similar to that of an exciton. This quasi-particle (spin = 1/2) of a charge and a lattice distortion...

Bhat, Shrivalli

2011-07-12T23:59:59.000Z

93

Amorphous-Silicon Thin-Film Transistors Using Chemical Vapor Deposition of Disilane  

Science Journals Connector (OSTI)

Amorphous silicon layers have been deposited by low pressure chemical vapour deposition at 450C using disilane as the only source gas. Simple inverted staggered thin-film transistors were made with thermal silicon dioxide as the gate insulator. Field-effect mobilities for electrons and holes were 1.4 cm2/V s and 0.1 cm2/V s, respectively. In order to obtain these high mobilities the transistor structures were carefully annealed in a hydrogen-radical rich ambient.

PaulA. Breddels; Hiroshi Kanoh; Osamu Sugiura; Masakiyo Matsumura

1990-01-01T23:59:59.000Z

94

Metal-semiconductor hybrid thin films in field-effect transistors  

SciTech Connect (OSTI)

Metal-semiconductor hybrid thin films consisting of an amorphous oxide semiconductor and a number of aluminum dots in different diameters and arrangements are formed by electron beam lithography and employed for thin-film transistors (TFTs). Experimental and computational demonstrations systematically reveal that the field-effect mobility of the TFTs enhances but levels off as the dot density increases, which originates from variations of the effective channel length that strongly depends on the electric field distribution in a transistor channel.

Okamura, Koshi, E-mail: koshi.okamura@kit.edu; Dehm, Simone [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany)] [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany); Hahn, Horst [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany) [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany); KIT-TUD Joint Research Laboratory Nanomaterials, Technische Universitt Darmstadt, Petersenstr. 32, 64287 Darmstadt (Germany)

2013-12-16T23:59:59.000Z

95

Adiabatic Quantum Transistors  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

We describe a many-body quantum system that can be made to quantum compute by the adiabatic application of a large applied field to the system. Prior to the application of the field, quantum information is localized on one boundary of the device, and after the application of the field, this information propagates to the other side of the device, with a quantum circuit applied to the information. The applied circuit depends on the many-body Hamiltonian of the material, and the computation takes place in a degenerate ground space with symmetry-protected topological order. Such adiabatic quantum transistors are universal adiabatic quantum computing devices that have the added benefit of being modular. Here, we describe this model, provide arguments for why it is an efficient model of quantum computing, and examine these many-body systems in the presence of a noisy environment.

Bacon, Dave; Flammia, Steven T.; Crosswhite, Gregory M.

2013-06-01T23:59:59.000Z

96

Ultrafast gating of proximity-focused microchannel-plate intensifiers  

SciTech Connect (OSTI)

Proximity-focused, microchannel-plate (MCP) image intensifiers have been used at Los Alamos for many years to allow single frame film and video exposure times in the range of 2.5 to 10 ns. There is now a program to reduce gating times to < 1 ns. This paper reviews previous work and the problems in achieving good resolution with gating times of < 1 ns. The key problems involve applying fast electrical gating signals to the tube elements. We present computer modeling studies of the combined tube, tube connection, and pulser system and show that low photocathode surface resistivity must be obtained to permit fast gating between the photocathode and the MCP input. We discuss ways of making low-resistivity S20 photocathodes, using gallium arsenide photocathodes, and various means of gating the tubes. A variety of pulser designs are being experimentally evaluated including spark gaps, avalanche transistors, Krytron tubes with sharpening gaps, step recovery diodes, and photoconductive elements (PCEs). The results of these studies are presented. Because of the high capacitances involved in most gating schemes, the tube connection geometry must be of low-impedance design, and our solution is presented. Finally, ways of testing these high-speed camera systems are discussed.

Lundy, A.S.; Iverson, A.E.

1982-01-01T23:59:59.000Z

97

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect (OSTI)

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

98

Demonstrating 1 nm-oxide-equivalent-thickness HfO{sub 2}/InSb structure with unpinning Fermi level and low gate leakage current density  

SciTech Connect (OSTI)

In this work, the band alignment, interface, and electrical characteristics of HfO{sub 2}/InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 0.1 eV and valence band offset of 3.35 0.1 eV have been extracted. The transmission electron microscopy analysis has shown that HfO{sub 2} layer would be a good diffusion barrier for InSb. As a result, 1 nm equivalent-oxide-thickness in the 4 nm HfO{sub 2}/InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10{sup ?4} A/cm{sup ?2}. The D{sub it} value of smaller than 10{sup 12} eV{sup ?1}cm{sup ?2} has been obtained using conduction method.

Trinh, Hai-Dang [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Lin, Yueh-Chin; Nguyen, Hong-Quan; Luc, Quang-Ho [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China)] [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Nguyen, Minh-Thuy; Duong, Quoc-Van; Nguyen, Manh-Nghia [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam)] [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Wang, Shin-Yuan [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)] [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China); Yi Chang, Edward [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)

2013-09-30T23:59:59.000Z

99

Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics  

SciTech Connect (OSTI)

We investigated the passivation of In{sub 0.53}Ga{sub 0.47}As (001) surface by molecular beam epitaxy techniques. After growth of strained In{sub 0.53}Ga{sub 0.47}As on InP (001) substrate, HfO{sub 2}/Al{sub 2}O{sub 3} high-{kappa} oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (D{sub it}) of the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface have been revealed by conductance measurement, indicating a downward D{sub it} profile from the energy close to the valence band (medium 10{sup 12} cm{sup -2}eV{sup -1}) towards that close to the conduction band (10{sup 11} cm{sup -2}eV{sup -1}). The low D{sub it}'s are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO{sub 2} has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO{sub 2} thickness (dielectric constant of HfO{sub 2}{approx}20) and the remained low D{sub it}'s due to the thin Al{sub 2}O{sub 3} passivation layer. The sample with HfO{sub 2} (3.4 nm)/Al{sub 2}O{sub 3} (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of {approx}0.93 nm.

Chu, L. K. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Katholieke Universiteit Leuven, 3001 Leuven (Belgium); Merckling, C.; Dekoster, J.; Caymax, M. [Interuniversity Microelectronics Center (IMEC vzw), 3001 Leuven (Belgium); Alian, A.; Heyns, M. [Katholieke Universiteit Leuven, 3001 Leuven (Belgium); Interuniversity Microelectronics Center (IMEC vzw), 3001 Leuven (Belgium); Kwo, J. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China); Hong, M. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

2011-07-25T23:59:59.000Z

100

CHAPTER III POWER BIPOLAR JUNCTION TRANSISTOR  

E-Print Network [OSTI]

recovery waveform of the transistor. These were obtained using the Silvaco simulation package [15]. The 2D

Anand, Raghubir Singh

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Optical NAND gate  

SciTech Connect (OSTI)

An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Skogen, Erik J. (Albuquerque, NM); Raring, James (Goleta, CA); Tauke-Pedretti, Anna (Albuquerque, NM)

2011-08-09T23:59:59.000Z

102

Optical NOR gate  

DOE Patents [OSTI]

An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Skogen, Erik J. (Albuquerque, NM); Tauke-Pedretti, Anna (Albuquerque, NM)

2011-09-06T23:59:59.000Z

103

CARBON NANOTUBE TRANSISTORS: AN EVALUATION  

E-Print Network [OSTI]

CARBON NANOTUBE TRANSISTORS: AN EVALUATION L.C. Castro, D.L. John, and D.L. Pulfrey Department A simple, non-equilibrium model is used to evaluate the likely DC performance of carbon nanotube field and transcon- ductance close to the low-quantum-capacitance limit. Keywords: Carbon nanotubes, field

Pulfrey, David L.

104

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect (OSTI)

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; zgr, .; Morko, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

105

Cellular Gate Technology  

E-Print Network [OSTI]

We propose a biochemically plausible mechanism for constructing digital logic signals and gates of significant complexity within living cells. These mechanisms rely largely on co-opting existing biochemical machinery and ...

Knight, Thomas F.

1998-01-05T23:59:59.000Z

106

Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides  

SciTech Connect (OSTI)

Performance limits of tunnel field-effect transistors based on mono-layer transition metal dichalcogenides are investigated through numerical quantum mechanical simulations. The atomic mono-layer nature of the devices results in a much smaller natural length ?, leading to much larger electric field inside the tunneling diodes. As a result, the inter-band tunneling currents are found to be very high as long as ultra-thin high-k gate dielectric is possible. The highest on-state driving current is found to be close to 600??A/?m at V{sub g}?=?V{sub d}?=?0.5?V when 2?nm thin HfO{sub 2} layer is used for gate dielectric, outperforming most of the conventional semiconductor tunnel transistors. In the five simulated transition-metal dichalcogenides, mono-layer WSe{sub 2} based tunnel field-effect transistor shows the best potential. Deep analysis reveals that there is plenty room to further enhance the device performance by either geometry, alloy, or strain engineering on these mono-layer materials.

Jiang, Xiang-Wei, E-mail: xwjiang@semi.ac.cn; Li, Shu-Shen [State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)

2014-05-12T23:59:59.000Z

107

Complementary junction heterostructure field-effect transistor  

DOE Patents [OSTI]

A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits. 10 figs.

Baca, A.G.; Drummond, T.J.; Robertson, P.J.; Zipperian, T.E.

1995-12-26T23:59:59.000Z

108

Alternative Gate Dielectrics on Semiconductors for MOSFET Device Applications  

SciTech Connect (OSTI)

We have investigated the synthesis and properties of deposited oxides on Si and Ge for use as alternative gate dielectrics in MOSFET applications. The capacitance and leakage current behavior of polycrystalline Y{sub 2}O{sub 3} films synthesized by pulsed-laser deposition is reported. In addition, we also discuss the growth of epitaxial oxide structures. In particular, we have investigated the use of silicide termination for oxide growth on (001) Si using laser-molecular beam epitaxy. In addition, we discuss a novel approach involving the use of hydrogen to eliminate native oxide during initial dielectric oxide nucleation on (001) Ge.

Norton, D.P.; Budai, J.D.; Chisholm, M.F.; Pennycook, S.J.; McKee, R.; Walker, F.; Lee, Y.; Park, C.

1999-12-06T23:59:59.000Z

109

IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 2, FEBRUARY 2008 143 Fabrication and Performance of 0.25-m Gate Length  

E-Print Network [OSTI]

is limited to a volt or less, MOSFETs offer the potential for improved input power handling ability]. Depletion-mode transistors have been demonstrated with each of these gate dielectric materials; mi Object Identifier 10.1109/LED.2007.914107 Fig. 1. Cross-sectional diagram of a fabricated device

110

CARBON NANOTUBE TRANSISTORS, SENSORS, AND A Dissertation  

E-Print Network [OSTI]

CARBON NANOTUBE TRANSISTORS, SENSORS, AND BEYOND A Dissertation Presented to the Faculty of Philosophy by Xinjian Zhou January 2008 #12;#12;CARBON NANOTUBE TRANSISTORS, SENSORS, AND BEYOND Xinjian Zhou, Ph. D. Cornell University 2008 Carbon nanotubes are tiny hollow cylinders, made from a single

McEuen, Paul L.

111

New Technology, New People, New Organizations: The Rise of the MOS Transistor,  

E-Print Network [OSTI]

The MOS (Metal-Oxide-Semiconductor) transistor, as the fundamental element in all digital electronics, is the base technology of late twentieth centmy American society. It has been the vehicle through which digital electronics has entered almost every area of American life, first through the electronicalcuhtor, then through the digital watch, and finally through the microprocessor. And while the proliferation of the microprocessor has been most apparent through the personal computer, it has spread almost everywhere: to automobiles, sewing machines, cameras, and dishwashers, to name only a few of its endless applications. In 1994, over 2 billion 4- and 8-bit microprocessors and microcontrollers 0ong out of date for use as central processing units for computers) were produced [Slater, 1996, p. 41]. The MOS Transistor and Technological Revolutions The story of the MOS transistor is the story of a technological revolution. The first technologically important transistor was the bipolar transistor, invented in 1948 by William Shockley at Bell Labs. It was extremely successful,

Ross Bassett

112

Photon-energy-dependent light effects in organic nano-floating-gate nonvolatile memories  

Science Journals Connector (OSTI)

Abstract A pentacene-based organic field-effect transistor nonvolatile memory, in which polystyrene covered Au nanoparticles act as the nano-floating-gate, is probed under different illumination conditions. The memory window can be greatly enlarged upon illumination depending on incident photon energy and intensity, and two light effects are proposed and discussed. The minority multiplication effect enhances the minority carrier tunneling into the nano-floating-gate, resulting in the remarkable positive VT shift. The excitation-induced injection effect is strongly photon energy dependent, and it is responsible for the significant negative VT shift. Appropriate illumination is favorable for reducing the programming/erasing voltage of organic nano-floating-gate nonvolatile memories.

Xu Gao; Chang-Hai Liu; Xiao-Jian She; Qin-Liang Li; Jie Liu; Sui-Dong Wang

2014-01-01T23:59:59.000Z

113

Light-induced bias stress reversal in polyfluorene thin-film transistors  

Science Journals Connector (OSTI)

Gate bias-stress effects in the high-performance semiconducting polymer poly-9 9? dioctyl-fluorene-co-bithiophene (F8T2) were studied. The bias stress in F8T2 was characterized in devices having various gate dielectric materialsdifferent types of SiO 2 and a polymerand a variety of chemically modified dielectric/semiconductor interfaces. A bias-stress effect was reversed by illuminating the transistor structure with band gap radiation. The recovery rate was directly related to the absorption characteristics of F8T2. We conclude that bias stress in F8T2 is due to hole charge trapping inside the polymer close to the dielectric interface and not to a structural change in the polymer or to charge in the dielectric.

A. Salleo; R. A. Street

2003-01-01T23:59:59.000Z

114

Probing Organic Transistors with Infrared Beams  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Probing Organic Transistors with Infrared Beams Print Probing Organic Transistors with Infrared Beams Print Silicon-based transistors are well-understood, basic components of contemporary electronic technology. In contrast, there is growing need for the development of electronic devices based on organic polymer materials. Organic field-effect transistors (FETs) are ideal for special applications that require large areas, light weight, and structural flexibility. They also have the advantage of being easy to mass-produce at very low cost. However, even though this class of devices is finding a growing number of applications, electronic processes in organic materials are still not well understood. A group of researchers from the University of California and the ALS has succeeded in probing the intrinsic electronic properties of the charge carriers in organic FETs using infrared spectromicroscopy. The results of their study could help in the future development of sensors, large-area displays, and other plastic electronic components.

115

Spin effects in single-electron transistors  

E-Print Network [OSTI]

Basic electron transport phenomena observed in single-electron transistors (SETs) are introduced, such as Coulomb-blockade diamonds, inelastic cotunneling thresholds, the spin-1/2 Kondo effect, and Fano interference. With ...

Granger, Ghislain

2005-01-01T23:59:59.000Z

116

Surface potential study of amorphous InGaZnO thin film transistors C. Chen and J. Kanickia  

E-Print Network [OSTI]

microscopy SKPM offers the possibility to measure two-dimensional 2D electrostatic po- tential distribution be described by the standard metal oxide semiconductor field effect transistor MOSFET equation incorporated at the epitaxial layer/ substrate interface. The current crowding phenomenon was also confirmed to occur

Kanicki, Jerzy

117

Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics  

SciTech Connect (OSTI)

Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2?V), negligible hysteresis, current saturation with intrinsic gain >1.0 in vacuum (pressure?gate dielectrics. Statistical analysis of the field-effect mobility and residual carrier concentration demonstrate high spatial uniformity of the dielectric interfacial properties and graphene transistor characteristics over full 3 in. wafers. This work thus establishes SANDs as an effective platform for large-area, high-performance graphene electronics.

Sangwan, Vinod K.; Jariwala, Deep; McMorrow, Julian J.; He, Jianting; Lauhon, Lincoln J. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Everaerts, Ken [Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States); Grayson, Matthew [Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States); Marks, Tobin J., E-mail: t-marks@northwestern.edu, E-mail: m-hersam@northwestern.edu; Hersam, Mark C., E-mail: t-marks@northwestern.edu, E-mail: m-hersam@northwestern.edu [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States)

2014-02-24T23:59:59.000Z

118

BILL GATES, AIDS GIVING, AND TAX REBATES  

Science Journals Connector (OSTI)

BILL GATES, AIDS GIVING, AND TAX REBATES ... Gates Foundation's support for global health inspires ideas on how to spend the tax rebate ...

PAMELA S. ZURER

2001-07-30T23:59:59.000Z

119

Developing Language Processing Components with GATE  

E-Print Network [OSTI]

Developing Language Processing Components with GATE (a User Guide) For GATE version 3 beta 1 (July.3 Troubleshooting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 3.4 [D] Get Started

Maynard, Diana

120

Technology and market evaluation for semiconductor nanowire transistors  

E-Print Network [OSTI]

Information processing systems have been getting more powerful over the course of the past three decades due to the scaling of transistor dimensions. Scaling of transistor dimension causes a plethora of technological ...

Omampuliyur, Rajamouly Swaminathan

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Probing Organic Transistors with Infrared Beams  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Probing Organic Transistors with Probing Organic Transistors with Infrared Beams Probing Organic Transistors with Infrared Beams Print Wednesday, 26 July 2006 00:00 Silicon-based transistors are well-understood, basic components of contemporary electronic technology. In contrast, there is growing need for the development of electronic devices based on organic polymer materials. Organic field-effect transistors (FETs) are ideal for special applications that require large areas, light weight, and structural flexibility. They also have the advantage of being easy to mass-produce at very low cost. However, even though this class of devices is finding a growing number of applications, electronic processes in organic materials are still not well understood. A group of researchers from the University of California and the ALS has succeeded in probing the intrinsic electronic properties of the charge carriers in organic FETs using infrared spectromicroscopy. The results of their study could help in the future development of sensors, large-area displays, and other plastic electronic components.

122

Carbon Nanotube Field-effect Transistors: AC Performance Capabilities.  

E-Print Network [OSTI]

Carbon Nanotube Field-effect Transistors: AC Performance Capabilities. D.L. Pulfrey, D.L. John-barrier carbon nanotube field-effect transistors are examined via simulations using a self-consistent Schrödinger is known about the DC capabilities of carbon nanotube field-effect transistors [1,2,3], and devices

Pulfrey, David L.

123

Fermi-level shifts in graphene transistors with dual-cut channels scraped by atomic force microscope tips  

SciTech Connect (OSTI)

We investigate the electronic properties of p-type graphene transistors on silicon dioxide with dual-cut channels that were scraped using atomic force microscope tips. In these devices, the current is forced to squeeze into the path between the two cuts rather than flow directly through the graphene sheet. We observe that the gate voltages with minimum current shift toward zero bias as the sizes of the dual-cut regions increase. These phenomena suggest that the Fermi levels in the dual-cut regions are shifted toward the Dirac points after the mechanical scraping process.

Lin, Meng-Yu [Institute of Electronics, National Taiwan University, Taipei 10617, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan (China); Chen, Yen-Hao [Department of Photonics, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Su, Chen-Fung [College of Photonics, National Chiao Tung University, Tainan 71150, Taiwan (China); Chang, Shu-Wei [Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan (China); Department of Photonics, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Lee, Si-Chen [Institute of Electronics, National Taiwan University, Taipei 10617, Taiwan (China); Lin, Shih-Yen, E-mail: shihyen@gate.sinica.edu.tw [Institute of Electronics, National Taiwan University, Taipei 10617, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan (China); Department of Photonics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

2014-01-13T23:59:59.000Z

124

from Microsoft's Bill Gates. Summer  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

with backing from Microsoft's Bill Gates. Summer fun (pages 4-5) All aboard a bus or train and tour Y-12 and the Secret City. August 2012 Visit us Many phrases can be used to...

125

Electronics MOS Field-Effect Transistors  

E-Print Network [OSTI]

Department of Electrical and Computer Engineering #12;NMOS Physical StructureNMOS Physical Structure p-Martinez - 1 - Jose Silva-Martinez Texas A&M University Department of Electrical Engineering Analog and Mixed substrate N+ N+ VS=0 VG>0 VD=0 P P+ B D S B G N-type transistorInversion: channel is created D-S current

Palermo, Sam

126

Gallium nitride junction field-effect transistor  

DOE Patents [OSTI]

An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

Zolper, John C. (Albuquerque, NM); Shul, Randy J. (Albuquerque, NM)

1999-01-01T23:59:59.000Z

127

Gallium nitride junction field-effect transistor  

DOE Patents [OSTI]

An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

Zolper, J.C.; Shul, R.J.

1999-02-02T23:59:59.000Z

128

E-Print Network 3.0 - attenuates oxidative damage Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Collection: Computer Technologies and Information Sciences 40 Charge-trapping properties of gate oxide grown on nitrogen-implanted silicon substrate Summary: Charge-trapping...

129

Radio-frequency dispersive detection of donor atoms in a field-effect transistor  

SciTech Connect (OSTI)

Radio-frequency dispersive read-out can provide a useful probe to nano-scale structures, such as nano-wire devices, especially, when the implementation of charge sensing is not straightforward. Here, we demonstrate dispersive gate-only read-out of phosphor donors in a silicon nano-scale transistor. The technique enables access to states that are only tunnel-coupled to one contact, which is not easily achievable by other methods. This allows us to locate individual randomly placed donors in the device channel. Furthermore, the setup is naturally compatible with high bandwidth access to the probed donor states and may aid the implementation of a qubit based on coupled donors.

Verduijn, J., E-mail: a.verduijn@unsw.edu.au; Rogge, S. [Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney NSW 2052 (Australia)] [Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney NSW 2052 (Australia); Vinet, M. [CEA/LETI-MINATEC, CEA-Grenoble, 17 rue des martyrs, F-38054 Grenoble (France)] [CEA/LETI-MINATEC, CEA-Grenoble, 17 rue des martyrs, F-38054 Grenoble (France)

2014-03-10T23:59:59.000Z

130

Random telegraph signals by alkanethiol-protected Au nanoparticles in chemically assembled single-electron transistors  

SciTech Connect (OSTI)

We have studied random telegraph signals (RTSs) in a chemically assembled single-electron transistor (SET) at temperatures as low as 300 mK. The RTSs in the chemically assembled SET were investigated by measuring the sourcedrain current, using a histogram of the RTS dwell time, and calculating the power spectrum density of the drain currenttime characteristics. It was found that the dwell time of the RTS was dependent on the drain voltage of the SET, but was independent of the gate voltage. Considering the spatial structure of the chemically assembled SET, the origin of the RTS is attributed to the trapped charges on an alkanethiol-protected Au nanoparticle positioned near the SET. These results are important as they will help to realize stable chemically assembled SETs in practical applications.

Kano, Shinya [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); CREST, Japan Science and Technology Agency, Yokohama 226-8503 (Japan); Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom); Azuma, Yasuo [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); CREST, Japan Science and Technology Agency, Yokohama 226-8503 (Japan); Tanaka, Daisuke [CREST, Japan Science and Technology Agency, Yokohama 226-8503 (Japan); Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571 (Japan); Institute for Chemical Research, Kyoto University, Uji 611-0011 (Japan); Sakamoto, Masanori [CREST, Japan Science and Technology Agency, Yokohama 226-8503 (Japan); Institute for Chemical Research, Kyoto University, Uji 611-0011 (Japan); PRESTO, Japan Science and Technology Agency, Uji 611-0011 (Japan); Teranishi, Toshiharu [CREST, Japan Science and Technology Agency, Yokohama 226-8503 (Japan); Institute for Chemical Research, Kyoto University, Uji 611-0011 (Japan); Smith, Luke W.; Smith, Charles G. [Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom); Majima, Yutaka, E-mail: majima@msl.titech.ac.jp [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); CREST, Japan Science and Technology Agency, Yokohama 226-8503 (Japan); Department of Printed Electronics Engineering, Sunchon National University, Sunchon 540-742 (Korea, Republic of)

2013-12-14T23:59:59.000Z

131

Halogen-Based Plasma Etching of Novel Field-Effect Transistor Gate Materials  

E-Print Network [OSTI]

of Silicon Etching by a Cf4 Plasma. Journal of Vacuumplasma with the addition of CF4, Cl-2, and N-2. Japaneseet al. , The effect of CF4 addition on Ru etching with

Kiehlbaugh, Kasi Michelle

2009-01-01T23:59:59.000Z

132

Solution-gated graphene transistors for chemical and biological sensing applications  

E-Print Network [OSTI]

Various fabrication processes were developed in order to make graphene-based chemical and biological sensors on different substrates. Single-layer graphene is grown by chemical vapor deposition and then transferred to ...

Mailly, Benjamin

2013-01-01T23:59:59.000Z

133

Tuning the threshold voltage in electrolyte-gated organic field-effect transistors  

Science Journals Connector (OSTI)

...variation of the electric potential (constant electric field) across the...respectively. q is the elementary charge, Qis is the...attributed to contact resistance. The threshold...Chemicals | Algorithms Electric Conductivity Electrolytes...

Log Kergoat; Lars Herlogsson; Benoit Piro; Minh Chau Pham; Gilles Horowitz; Xavier Crispin; Magnus Berggren

2012-01-01T23:59:59.000Z

134

Research Update: Molecular electronics: The single-molecule switch and transistor  

SciTech Connect (OSTI)

In order to design and realize single-molecule devices it is essential to have a good understanding of the properties of an individual molecule. For electronic applications, the most important property of a molecule is its conductance. Here we show how a single octanethiol molecule can be connected to macroscopic leads and how the transport properties of the molecule can be measured. Based on this knowledge we have realized two single-molecule devices: a molecular switch and a molecular transistor. The switch can be opened and closed at will by carefully adjusting the separation between the electrical contacts and the voltage drop across the contacts. This single-molecular switch operates in a broad temperature range from cryogenic temperatures all the way up to room temperature. Via mechanical gating, i.e., compressing or stretching of the octanethiol molecule, by varying the contact's interspace, we are able to systematically adjust the conductance of the electrode-octanethiol-electrode junction. This two-terminal single-molecule transistor is very robust, but the amplification factor is rather limited.

Sotthewes, Kai; Heimbuch, Ren, E-mail: r.heimbuch@utwente.nl; Kumar, Avijit; Zandvliet, Harold J. W. [Physics of Interfaces and Nanomaterials, MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede (Netherlands); Geskin, Victor [Service de Chimie des Materiaux Nouveaux, University of Mons, Mons (Belgium)

2014-01-01T23:59:59.000Z

135

Screening in gated bilayer graphene  

Science Journals Connector (OSTI)

The tight-binding model of a graphene bilayer is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the equation for the gap is obtained. This equation for the ratio of the gap to the chemical potential is determined only by the screening constant. Thus the gap is strictly proportional to the gate voltage or the carrier concentration in the absence of donors or acceptors. In the opposite case, where the donors or acceptors are present, the gap demonstrates the asymmetrical behavior on the electron and hole sides of the gate bias.

L. A. Falkovsky

2009-09-30T23:59:59.000Z

136

Decomposition of Diagonal Hermitian Quantum Gates Using Multiple-Controlled Pauli Z Gates  

E-Print Network [OSTI]

Quantum logic decomposition refers to decomposing a given quantum gate to a set of physically implementable gates. An approach has been presented to decompose arbitrary diagonal quantum gates to a set of multiplexed-rotation gates around z axis. In this paper, a special class of diagonal quantum gates, namely diagonal Hermitian quantum gates, is considered and a new perspective to the decomposition problem with respect to decomposing these gates is presented. It is first shown that these gates can be decomposed to a set that solely consists of multiple-controlled Z gates. Then a binary representation for the diagonal Hermitian gates is introduced. It is shown that the binary representations of multiple-controlled Z gates form a basis for the vector space that is produced by the binary representations of all diagonal Hermitian quantum gates. Moreover, the problem of decomposing a given diagonal Hermitian gate is mapped to the problem of writing its binary representation in the specific basis mentioned above. Moreover, CZ gate is suggested to be the two-qubit gate in the decomposition library, instead of previously used CNOT gate. Experimental results show that the proposed approach can lead to circuits with lower costs in comparison with the previous ones.

Mahboobeh Houshmand; Morteza Saheb Zamani; Mehdi Sedighi; Mona Arabzadeh

2014-05-26T23:59:59.000Z

137

Improvement of the cantilever grooveless gate  

Science Journals Connector (OSTI)

1. The grooveless multisectional gate permits closing openings of any width without dividing the conduit into se...

S. M. Slisskii; P. R. Khlopenkov; E. G. Chernenko

1976-01-01T23:59:59.000Z

138

Characterization of interface states in Al{sub 2}O{sub 3}/AlGaN/GaN structures for improved performance of high-electron-mobility transistors  

SciTech Connect (OSTI)

We have investigated the relationship between improved electrical properties of Al{sub 2}O{sub 3}/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) and electronic state densities at the Al{sub 2}O{sub 3}/AlGaN interface evaluated from the same structures as the MOS-HEMTs. To evaluate Al{sub 2}O{sub 3}/AlGaN interface state densities of the MOS-HEMTs, two types of capacitance-voltage (C-V) measurement techniques were employed: the photo-assisted C-V measurement for the near-midgap states and the frequency dependent C-V characteristics for the states near the conduction-band edge. To reduce the interface states, an N{sub 2}O-radical treatment was applied to the AlGaN surface just prior to the deposition of the Al{sub 2}O{sub 3} insulator. As compared to the sample without the treatment, the N{sub 2}O-radical treated Al{sub 2}O{sub 3}/AlGaN/GaN structure showed smaller frequency dispersion of the C-V curves in the positive gate bias range. The state densities at the Al{sub 2}O{sub 3}/AlGaN interface were estimated to be 1??10{sup 12}?cm{sup ?2}?eV{sup ?1} or less around the midgap and 8??10{sup 12}?cm{sup ?2}?eV{sup ?1} near the conduction-band edge. In addition, we observed higher maximum drain current at the positive gate bias and suppressed threshold voltage instability under the negative gate bias stress even at 150?C. Results presented in this paper indicated that the N{sub 2}O-radical treatment is effective both in reducing the interface states and improving the electrical properties of the Al{sub 2}O{sub 3}/AlGaN/GaN MOS-HEMTs.

Hori, Y.; Yatabe, Z. [Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13 West 8, Sapporo, 060-8628 Hokkaido (Japan); Hashizume, T., E-mail: hashi@rciqe.hokudai.ac.jp [Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13 West 8, Sapporo, 060-8628 Hokkaido (Japan); Japan Science and Technology Agency (JST), CREST, Tokyo 102-0075 (Japan)

2013-12-28T23:59:59.000Z

139

The gated community: residents' crime experience and perception of safety behind gates and fences in the urban area  

E-Print Network [OSTI]

regarding the connections between gated community territory, safety, and crime experience, this study classifies apartment communities according to the conditions of their gating and fencing: gated communities, perceived gated communities, and non...

Kim, Suk Kyung

2006-10-30T23:59:59.000Z

140

Thermally Oxidized Silicon  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Anneli Munkholm (Lumileds Lighting) and Sean Brennan (SSRL) Anneli Munkholm (Lumileds Lighting) and Sean Brennan (SSRL) Illustration of the silicon positions near the Si-SiO2 interface for a 4° miscut projected onto the ( ) plane. The silicon atoms in the substrate are blue and those in the oxide are red. The small black spots represent the translated silicon positions in the absence of static disorder. The silicon atoms in the oxide have been randomly assigned a magnitude and direction based on the static disorder value at that position in the lattice. The outline of four silicon unit cells is shown in black, whereas the outline of four expanded lattice cells in the oxide is shown in blue One of the most studied devices of modern technology is the field-effect transistor, which is the basis for most integrated circuits. At its heart

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141

Doping suppression and mobility enhancement of graphene transistors fabricated using an adhesion promoting dry transfer process  

SciTech Connect (OSTI)

We present the facile dry transfer of graphene synthesized via chemical vapor deposition on copper film to a functional device substrate. High quality uniform dry transfer of graphene to oxidized silicon substrate was achieved by exploiting the beneficial features of a poly(4-vinylphenol) adhesive layer involving a strong adhesion energy to graphene and negligible influence on the electronic and structural properties of graphene. The graphene field effect transistors (FETs) fabricated using the dry transfer process exhibit excellent electrical performance in terms of high FET mobility and low intrinsic doping level, which proves the feasibility of our approach in graphene-based nanoelectronics.

Cheol Shin, Woo; Hun Mun, Jeong; Yong Kim, Taek; Choi, Sung-Yool; Jin Cho, Byung, E-mail: bjcho@kaist.edu, E-mail: tskim1@kaist.ac.kr [Department of Electrical Engineering, Graphene Research Center, KAIST, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Yoon, Taeshik; Kim, Taek-Soo, E-mail: bjcho@kaist.edu, E-mail: tskim1@kaist.ac.kr [Department of Mechanical Engineering, Graphene Research Center, KAIST, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)] [Department of Mechanical Engineering, Graphene Research Center, KAIST, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

2013-12-09T23:59:59.000Z

142

The role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh vacuum study  

E-Print Network [OSTI]

The role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh conditions that elucidate the role of oxygen in the functioning of silicon carbide field-effect gas sensors hydrogen-depleted state; competition between hydrogen oxidation and hydrogen diffusion to metal/ oxide

Tobin, Roger G.

143

Graduate Automotive Technology Education (GATE) Initiative Awards |  

Broader source: Energy.gov (indexed) [DOE]

Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards September 8, 2011 - 11:46am Addthis Graduate Automotive Technology Education (GATE) Initiative Awards DOE's Graduate Automotive Technology Education (GATE) initiative will award $6.4 million over the course of five years to support seven Centers of Excellence at American colleges, universities, and university-affiliated research institutions. The awardees will focus on three critical automotive technology areas: hybrid propulsion, energy storage, and lightweight materials. By funding curriculum development and expansion as well as laboratory work, GATE allows higher education institutions to develop multidisciplinary training. As a result, GATE promotes the development of a

144

Graduate Automotive Technology Education (GATE) Initiative Awards |  

Broader source: Energy.gov (indexed) [DOE]

Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards September 8, 2011 - 11:46am Addthis Graduate Automotive Technology Education (GATE) Initiative Awards DOE's Graduate Automotive Technology Education (GATE) initiative will award $6.4 million over the course of five years to support seven Centers of Excellence at American colleges, universities, and university-affiliated research institutions. The awardees will focus on three critical automotive technology areas: hybrid propulsion, energy storage, and lightweight materials. By funding curriculum development and expansion as well as laboratory work, GATE allows higher education institutions to develop multidisciplinary training. As a result, GATE promotes the development of a

145

Tunable organic transistors that use microfluidic source and drain electrodes  

E-Print Network [OSTI]

Tunable organic transistors that use microfluidic source and drain electrodes George Maltezos of organic transistor has the potential to be useful in plastic microfluidic devices that require active electronics directly with molded microfluidic channel arrays represents a promising way to increase

Rogers, John A.

146

Flexible Graphene Field-Effect Transistors for Microwave Electronics  

E-Print Network [OSTI]

Flexible Graphene Field-Effect Transistors for Microwave Electronics Inanc Meric , Nicholas Petrone-frequency characteristics of graphene field-effect transistors (GFETs) has received significant interest due the very high carrier velocities in graphene. In addition to excellent electronic performance, graphene possesses

Shepard, Kenneth

147

Vibration-Assisted Electron Tunneling in C140 Transistors  

Science Journals Connector (OSTI)

Vibration-Assisted Electron Tunneling in C140 Transistors ... When electrons travel through molecules, vibrational modes of the molecules can affect current flow. ... 1 Recently, effects of vibrations in single molecules have been measured using scanning tunneling microscopes,2 single-molecule transistors,3,4 and mechanical break junctions. ...

A. N. Pasupathy; J. Park; C. Chang; A. V. Soldatov; S. Lebedkin; R. C. Bialczak; J. E. Grose; L. A. K. Donev; J. P. Sethna; D. C. Ralph; P. L. McEuen

2005-01-07T23:59:59.000Z

148

Sulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor  

E-Print Network [OSTI]

monitoring, solid-oxide fuel cells, and coal gasification, require operation at much higher temperatures thanSulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor Yung Ho to hydrogen sulfide, even in the presence of hydrogen or oxygen at partial pressures of 20­600 times greater

Tobin, Roger G.

149

Golden Gate Park Marina Blvd.  

E-Print Network [OSTI]

St. Eureka S.VanNessAve. M arket St. Broadway St. To Golden Gate Bridge H ow ard St. Folsom St. Bryant St. 10 Bridge to/from Oakland C hannel St. 2nd St. Pine St. California St. California St. Clement St. Lake St From the East Bay and Oakland Airport 1. Cross Bay Bridge (I­80 West) 2. Exit on left 2A / 5th St. 3

Derisi, Joseph

150

Combined Transistor Sizing with Bu er Insertion for Timing Optimization  

E-Print Network [OSTI]

, to achieve bet- ter power-delay and area-delay tradeo s. The delay model incorporates placement-based information and the e ect of input slew rates on gate delays. The re- sults obtained by using the new method gate Gi is mod- eled by an equivalent inverter. The relation between the gate sizes in the equivalent

Sapatnekar, Sachin

151

Fast Quantum Gates for Neutral Atoms  

Science Journals Connector (OSTI)

We propose several schemes for implementing a fast two-qubit quantum gate for neutral atoms with the gate operation time much faster than the time scales associated with the external motion of the atoms in the trapping potential. In our example, the large interaction energy required to perform fast gate operations is provided by the dipole-dipole interaction of atoms excited to low-lying Rydberg states in constant electric fields. A detailed analysis of imperfections of the gate operation is given.

D. Jaksch; J. I. Cirac; P. Zoller; S. L. Rolston; R. Ct; M. D. Lukin

2000-09-04T23:59:59.000Z

152

Toward practical gas sensing with highly reduced graphene oxide: a new signal processing method to circumvent run-to-run and device-to-device variations  

SciTech Connect (OSTI)

Graphene is worth evaluating for chemical sensing and biosensing due to its outstanding physical and chemical properties. We first report on the fabrication and characterization of gas sensors using a back-gated field-effect transistor platform with chemically reduced graphene oxide (R-GO) as the conducting channel. These sensors exhibited a 360% increase in response when exposed to 100 ppm NO{sub 2} in air, compared with thermally reduced graphene oxide sensors we reported earlier. We then present a new method of signal processing/data interpretation that addresses (i) sensing devices with long recovery periods (such as required for sensing gases with these R-GO sensors) as well as (ii) device-to-device variations. A theoretical analysis is used to illuminate the importance of using the new signal processing method when the sensing device suffers from slow recovery and non-negligible contact resistance. We suggest that the work reported here (including the sensor signal processing method and the inherent simplicity of device fabrication) is a significant step toward the real-world application of graphene-based chemical sensors.

Lu, G.; Park, S.; Ruoff, R. S.; Ocola, L. E.; Chen, J. (Center for Nanoscale Materials); (Univ. of Wisconsin); (Univ. of Texas)

2011-01-01T23:59:59.000Z

153

Toward practical gas sensing with highly reduced graphene oxide : a new signal processing method to circumvent run-to-run and device-to-device variations.  

SciTech Connect (OSTI)

Graphene is worth evaluating for chemical sensing and biosensing due to its outstanding physical and chemical properties. We first report on the fabrication and characterization of gas sensors using a back-gated field-effect transistor platform with chemically reduced graphene oxide (R-GO) as the conducting channel. These sensors exhibited a 360% increase in response when exposed to 100 ppm NO{sub 2} in air, compared with thermally reduced graphene oxide sensors we reported earlier. We then present a new method of signal processing/data interpretation that addresses (i) sensing devices with long recovery periods (such as required for sensing gases with these R-GO sensors) as well as (ii) device-to-device variations. A theoretical analysis is used to illuminate the importance of using the new signal processing method when the sensing device suffers from slow recovery and non-negligible contact resistance. We suggest that the work reported here (including the sensor signal processing method and the inherent simplicity of device fabrication) is a significant step toward the real-world application of graphene-based chemical sensors.

Ocola, L. E.; Park, S.; Yu, K.; Ruoff, R. S.; Ocola, L. E.; Rosenmann, D.; Chen, J.; Univ. of Wisconsin at Milwaukee; Univ. of Texas at Austin

2011-01-04T23:59:59.000Z

154

Difference of operation mechanisms in SWNTs network FETs studied via scanning gate microscopy  

SciTech Connect (OSTI)

Field effect transistors (FETs) whose channel is composed of a network of single wall carbon nanotubes (SWNTs) have been studied to investigate the mechanism of the device operation via scanning gate microscopy (SGM) at room temperature. We observed different SGM response in networks of SWNTs either synthesized by CoMoCAT process or semiconducting enriched by density gradient ultracentrifuge process. In the former case, SGM response was observed at specific inter-tube junctions suggesting a Schottky junction formed with semiconducting and metallic SWNTs in the network. In contrast, multiple concentric rings in the SGM response are observed within the tubes in a network of the latter SWNTs suggesting a possibility of quantum mechanical transport at room-temperature. Different type of SGM responses are confirmed in the two kinds of SWNTs networks, nevertheless such active positions would likely have an important role in the FET operation mechanism in each network.

Wei, Xiaojun; Matsunaga, Masahiro; Yahagi, Tatsurou; Maeda, Kenji; Ochiai, Yuichi; Aoki, Nobuyuki [Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522 (Japan); Bird, Jonathan P. [Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY 14260-1920 (United States); Ishibashi, Koji [Advanced Device Laboratory, RIKEN, Wako, Saitama 351-0198 (Japan)

2013-12-04T23:59:59.000Z

155

Characteristics of light-induced electron transport from P3HT to ZnO-nanowire field-effect transistors  

SciTech Connect (OSTI)

We fabricated ZnO-nanowire (NW) field-effect transistors (FETs) coated with poly(3-hexylthiophene) (P3HT) and characterized the electron-transfer characteristics from the P3HT to the ZnO NWs. Under irradiation by laser light with a wavelength of 532?nm, photo-induced electrons were created in the P3HT and then transported to the ZnO NWs, constituting a source-drain current in the initially enhancement-mode P3HT-coated ZnO-NW FETs. As the intensity of the light increased, the current increased, and its threshold voltage shifted to the negative gate-bias direction. We estimated the photo-induced electron density and the electron-transfer characteristics, which will be helpful for understanding organic-inorganic hybrid optoelectronic devices.

Choe, Minhyeok; Hoon Lee, Byoung; Park, Woojin; Kang, Jang-Won; Jeong, Sehee; Hun Lee, Byoung; Lee, Kwanghee; Park, Seong-Ju, E-mail: sjpark@gist.ac.kr [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)] [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Cho, Kyungjune; Lee, Takhee, E-mail: tlee@snu.ac.kr [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)] [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Hong, Woong-Ki [Jeonju Center, Korea Basic Science Institute, Jeonju 561-756 (Korea, Republic of)] [Jeonju Center, Korea Basic Science Institute, Jeonju 561-756 (Korea, Republic of)

2013-11-25T23:59:59.000Z

156

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors  

SciTech Connect (OSTI)

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P. [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)] [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)] [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

2013-11-25T23:59:59.000Z

157

Graphene quantum point contact transistor for DNA sensing  

Science Journals Connector (OSTI)

Graphene quantum point contact transistor for DNA...the position and size of a nanopore in graphene nanoribbons can strongly affect its electronic...nanopore. In particular, we show that a graphene membrane with quantum point contact geometry...

Anuj Girdhar; Chaitanya Sathe; Klaus Schulten; Jean-Pierre Leburton

2013-01-01T23:59:59.000Z

158

Graphene field effect transistor without an energy gap  

Science Journals Connector (OSTI)

Graphene field effect transistor without an energy...of Technology, Pasadena, CA 91125; Graphene is a room temperature ballistic electron...relativistic massless electrons in pristine graphene exhibit unimpeded Klein tunneling penetration...

Min Seok Jang; Hyungjun Kim; Young-Woo Son; Harry A. Atwater; William A. Goddard III

2013-01-01T23:59:59.000Z

159

Flexible, transparent thin film transistors raise hopes for flexible...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

screens and displays. Virtually all flat-screen TVs and smartphones are made up of thin film transistors today; they form the basis of both LEDs and LCDs (liquid crystal...

160

BN/Graphene/BN Transistors for RF Applications  

E-Print Network [OSTI]

In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched ...

Taychatanapat, Thiti

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Focused Ion Beam Induced Effects on MOS Transistor Parameters  

SciTech Connect (OSTI)

We report on recent studies of the effects of 50 keV focused ion beam (FIB) exposure on MOS transistors. We demonstrate that the changes in value of transistor parameters (such as threshold voltage, V{sub t}) are essentially the same for exposure to a Ga+ ion beam at 30 and 50 keV under the same exposure conditions. We characterize the effects of FIB exposure on test transistors fabricated in both 0.5 {micro}m and 0.225 {micro}m technologies from two different vendors. We report on the effectiveness of overlying metal layers in screening MOS transistors from FIB-induced damage and examine the importance of ion dose rate and the physical dimensions of the exposed area.

Abramo, Marsha T.; Antoniou, Nicholas; Campbell, Ann N.; Fleetwood, Daniel M.; Hembree, Charles E.; Jessing, Jeffrey R.; Soden, Jerry M.; Swanson, Scot E.; Tangyunyong, Paiboon; Vanderlinde, William E.

1999-07-28T23:59:59.000Z

162

Automatically closing swing gate closure assembly  

DOE Patents [OSTI]

A swing gate closure assembly for nuclear reactor tipoff assembly wherein the swing gate is cammed open by a fuel element or spacer but is reliably closed at a desired closing rate primarily by hydraulic forces in the absence of a fuel charge.

Chang, Shih-Chih (Richland, WA); Schuck, William J. (Richland, WA); Gilmore, Richard F. (Kennewick, WA)

1988-01-01T23:59:59.000Z

163

Quantum logic gates for superconducting resonator qudits  

SciTech Connect (OSTI)

We study quantum information processing using superpositions of Fock states in superconducting resonators as quantum d-level systems (qudits). A universal set of single and coupled logic gates is theoretically proposed for resonators coupled by superconducting circuits of Josephson junctions. These gates use experimentally demonstrated interactions and provide an attractive route to quantum information processing using harmonic oscillator modes.

Strauch, Frederick W. [Williams College, Williamstown, Massachusetts 01267 (United States)

2011-11-15T23:59:59.000Z

164

Simulation-based design of a strained graphene field effect transistor incorporating the pseudo magnetic field effect  

SciTech Connect (OSTI)

We present a numerical study on the performance of strained graphene-based field-effect transistors. A local strain less than 10% is applied over a central channel region of the graphene to induce the shift of the Dirac point in the channel region along the transverse momentum direction. The left and the right unstrained graphene regions are doped to be either n-type or p-type. By using the atomistic tight-binding model and a Green's function method, we predict that the gate voltage applied to the central strained graphene region can switch the drain current on and off with an on/off ratio of more than six orders of magnitude at room temperature. This is in spite of the absence of a bandgap in the strained channel region. Steeper subthreshold slopes below 60?mV/decade are also predicted at room temperature because of a mechanism similar to the band-to-band tunneling field-effect transistors.

Souma, Satofumi, E-mail: ssouma@harbor.kobe-u.ac.jp; Ueyama, Masayuki; Ogawa, Matsuto [Department of Electrical and Electronic Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan)

2014-05-26T23:59:59.000Z

165

Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors  

SciTech Connect (OSTI)

The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 21011 to 21015 cm2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 21015 cm2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 21011 to 21015 cm2 exhibited minimal degradation of the saturation drain current and extrinsic trans- conductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present. VC 2011 American Vacuum Society. [DOI: 10.1116/1.3644480

Lo, C. F. [University of Florida; Liu, L. [University of Florida, Gainesville; Ren, F. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2011-01-01T23:59:59.000Z

166

Journal Article: Gate-tunable exchange coupling between cobalt...  

Office of Scientific and Technical Information (OSTI)

Gate-tunable exchange coupling between cobalt clusters on graphene Citation Details Title: Gate-tunable exchange coupling between cobalt clusters on graphene Authors: Chen, Hua;...

167

The University of Tennessee's GATE Center for Hybrid Systems...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

The University of Tennessee's GATE Center for Hybrid Systems The University of Tennessee's GATE Center for Hybrid Systems 2009 DOE Hydrogen Program and Vehicle Technologies Program...

168

The University of Tennessee's GATE Center for Hybrid Systems...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

The University of Tennessee's GATE Center for Hybrid Systems The University of Tennessee's GATE Center for Hybrid Systems Presentation from the U.S. DOE Office of Vehicle...

169

Substrate dielectric effects on graphene field effect transistors  

SciTech Connect (OSTI)

Graphene is emerging as a promising material for future electronics and optoelectronics applications due to its unique electronic structure. Understanding the graphene-dielectric interaction is of vital importance for the development of graphene field effect transistors (FETs) and other novel graphene devices. Here, we extend the exploration of substrate dielectrics from conventionally used thermally grown SiO{sub 2} and hexagonal boron nitride films to technologically relevant deposited dielectrics used in semiconductor industry. A systematic analysis of morphology and optical and electrical properties was performed to study the effects of different substrates (SiO{sub 2}, HfO{sub 2}, Al{sub 2}O{sub 3}, tetraethyl orthosilicate (TEOS)-oxide, and Si{sub 3}N{sub 4}) on the carrier transport of chemical vapor deposition-derived graphene FET devices. As baseline, we use graphene FETs fabricated on thermal SiO{sub 2} with a relatively high carrier mobility of 10?000 cm{sup 2}/(V s). Among the deposited dielectrics studied, silicon nitride showed the highest mobility, comparable to the properties of graphene fabricated on thermal SiO{sub 2}. We conclude that this result comes from lower long range scattering and short range scattering rates in the nitride compared those in the other deposited films. The carrier fluctuation caused by substrates, however, seems to be the main contributing factor for mobility degradation, as a universal mobility-disorder density product is observed for all the dielectrics examined. The extrinsic doping trend is further confirmed by Raman spectra. We also provide, for the first time, correlation between the intensity ratio of G peak and 2D peak in the Raman spectra to the carrier mobility of graphene for different substrates.

Hu, Zhaoying; Prasad Sinha, Dhiraj; Ung Lee, Ji, E-mail: jlee1@albany.edu; Liehr, Michael [College of Nanoscale Science and Engineering, The State University of New York at Albany, Albany, New York 12203 (United States)

2014-05-21T23:59:59.000Z

170

Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition  

E-Print Network [OSTI]

Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO[subscript 2] substrate. The properties and integration of these graphene-on-insulator transistors are presented and ...

Keast, Craig L.

171

Investigation of the tunneling emitter bipolar transistor as spin-injector into silicon  

E-Print Network [OSTI]

In this thesis is discussed the tunneling emitter bipolar transistor as a possible spin-injector into silicon. The transistor has a metallic emitter which as a spin-injector will be a ferromagnet. Spin-polarized electrons ...

Van Veenhuizen, Marc Julien

2010-01-01T23:59:59.000Z

172

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

173

Transistor-Based Miniature Microwave-Drill Applicator Yehuda Meir and Eli Jerby*  

E-Print Network [OSTI]

. Recent developments of gallium-nitride (GaN) and silicon- carbide (SiC) transistors have increased

Jerby, Eli

174

David A Gates | Princeton Plasma Physics Lab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Gates A Gates Principal Research Physicist, Stellerator Physics Lead, Advanced Projects Division, Science Focus Group Leader for Macroscopic Stability David Gates is a principal research physicist for the advanced projects division of PPPL, and the stellarator physics leader at the Laboratory. In the latter capacity he leads collaborative efforts with the Wendelstein 7-X and Large Helical Device stellarator projects in Germany and Japan, respectively. Gates is first author of more than a dozen research papers, including an April, 2012, paper that proposed a possible solution to a critical barrier to fusion as a source of energy for generating electricity. Interests Collisional energy transport High-frequency Alfvén waves Fast-ion energy transfer Ideal and resistive magneto-hydrodynamic stability

175

Digital gate pulse generator for cycloconverter control  

DOE Patents [OSTI]

The present invention provides a digital gate pulse generator which controls the output of a cycloconverter used for electrical power conversion applications by determining the timing and delivery of the firing pulses to the switching devices in the cycloconverter. Previous gate pulse generators have been built with largely analog or discrete digital circuitry which require many precision components and periodic adjustment. The gate pulse generator of the present invention utilizes digital techniques and a predetermined series of values to develop the necessary timing signals for firing the switching device. Each timing signal is compared with a reference signal to determine the exact firing time. The present invention is significantly more compact than previous gate pulse generators, responds quickly to changes in the output demand and requires only one precision component and no adjustments.

Klein, Frederick F. (Monroeville, PA); Mutone, Gioacchino A. (Pleasant Hills, PA)

1989-01-01T23:59:59.000Z

176

Yuanmingyuan East Gate of Peking University  

E-Print Network [OSTI]

Dingxiangyuan Cafeteria SupermarketI Parking 32 Northeast Gate C Building C Swimming Hall East Playground and New Energy Technology 32 Institute of Education Schools & Departments A Foreign Student Affairs

Gu, Jin

177

Graphene-Base Hot-Electron Transistor  

E-Print Network [OSTI]

B. H. ; Wang, K. L. "Vertical Graphene-Base Hot-Electronoperation in single-layer graphene ferroelectric memory",of Dirac Point Energy at the Graphene/Oxide Interface", Nano

Zeng, Caifu

2014-01-01T23:59:59.000Z

178

PUBLISHED ONLINE: 31 AUGUST 2014 | DOI: 10.1038/NPHYS3049 Gate-tunable superconducting weak link and  

E-Print Network [OSTI]

to control transmission across the device, and conductance measurements are carried out with standard lock Lee, James R. Williams and David Goldhaber-Gordon* Two-dimensional electron systems in gallium they are easily modulated by voltages on nanopatterned gate electrodes. Electron systems at oxide interfaces hold

Loss, Daniel

179

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

180

Behavior of the drain leakage current in metal-induced laterally crystallized thin lm transistors  

E-Print Network [OSTI]

Behavior of the drain leakage current in metal-induced laterally crystallized thin ®lm transistors crystallized (MILC) thin ®lm transistors (TFTs) are better than solid phase crystallized (SPC) TFTs in many. ? 2000 Elsevier Science Ltd. All rights reserved. Keywords: Thin ®lm transistors; Leakage current

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova*  

E-Print Network [OSTI]

1 Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova* , I be minimized throughout the fabrication process. Amorphous silicon thin-film transistors and solar cells, thin-film transistor, solar cell, flexible electronics Phone: (609) 258-4626, Fax: (609) 258-3585, E

182

Transistors into Resistors -- and Back Again | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Transistors into Resistors -- and Back Again Transistors into Resistors -- and Back Again Transistors into Resistors -- and Back Again December 22, 2011 - 3:07pm Addthis The future of the computer chips that serve in supercomputers, smart phones, sensors, vehicles and appliances may hinge on a new material developed by researchers at Northwestern University that rearranges itself to steer or stop an electrical current. | Photo courtesy of Pacific Northwest National Laboratory. The future of the computer chips that serve in supercomputers, smart phones, sensors, vehicles and appliances may hinge on a new material developed by researchers at Northwestern University that rearranges itself to steer or stop an electrical current. | Photo courtesy of Pacific Northwest National Laboratory. Charles Rousseaux Charles Rousseaux

183

Paying the Toll: A Political History of the Golden Gate Bridge and Highway District, 1923-1971  

E-Print Network [OSTI]

Gate: the Construction of the Golden Gate Bridge and HighwayCommittee on Golden Gate Bridge and Highway District,versus the Golden Gate Bridge . . . . . . . . . . . . . . .

Dyble, Amy Louise Nelson

2003-01-01T23:59:59.000Z

184

Voltage-gated Ion Channels and Gating Modifier Toxins William A. Catterall,* Sandrine Cestle,  

E-Print Network [OSTI]

;2 Abstract Voltage-gated sodium, calcium, and potassium channels generate electrical signals required and a pore loop. Their pores are formed by the S5/S6 segments and the pore loop between them and are gated and participate in calcium signaling pathways in nonexcitable cells. Because of their importance in many aspects

Paris-Sud XI, Université de

185

Gated SIT vidicon streak tube  

SciTech Connect (OSTI)

A recently developed prototype streak tube designed to produce high gain and resolution by incorporating the streak and readout functions in one envelope thereby minimizing photon-to-change transformations and eliminating external coupling losses is presented. The tube is based upon a grid-gated Silicon-Intensified-Target Vidicon (SITV) with integral Focus Projection Scan (FPS) TV readout. Demagnifying electron optics (m=0.63) in the image section map the 40-mm-diameter photocathode image unto a 25-mm-diameter silicon target where gains greater than or equal to10/sup 3/ are achieved with only 10 KV accelerating voltage. This is compared with much lower gains (approx.50) at much higher voltages (approx.30 KV) reported for streak tubes using phosphor screens. Because SIT technology is well established means for electron imaging in vacuum, such fundamental problems as ''backside thinning'' required for electron imaging unto CCDs do not exist. The high spatial resolution (approx.30 lp/mm), variable scan formats, and high speed electrostatic deflection (250 mm/sup 2/ areas are routinely rastered with 256 scan lines in 1.6 ms) available from FPS readout add versatility not available in CCD devices. Theoretical gain and spatial resolution for this design (developed jointly by Los Alamos National Laboratory and General Electric Co.) are compared with similar calculations and measured data obtained for RCA 73435 streaks fiber optically coupled to (1) 25-mm-diameter SIT FPS vidicons and (2) 40-mm-diameter MCPTs (proximity-focused microchannel plate image intensifier tubes) fiber optically coupled to 18-mm-diameter Sb/sub 2/S/sub 3/ FPS vidicons. Sweep sensitivity, shutter ratio, and record lengths for nanosecond duration (20 to 200 ns) streak applications are discussed.

Dunbar, D.L.; Yates, G.J.; Black, J.P.

1985-01-01T23:59:59.000Z

186

The Defeat of the Golden Gate Authority: Regional Planning and Local Power  

E-Print Network [OSTI]

Regional Politics and the Golden Gate Bridge, Philadelphia:Politics and the Golden Gate Bridge, won the Abel WolmanBridge and the Golden Gate Bridge. Moreover, interregional

Dyble, Louise Nelson

2012-01-01T23:59:59.000Z

187

Heralded quantum gates with integrated error detection in optical cavitites  

E-Print Network [OSTI]

We propose and analyze heralded quantum gates between qubits in optical cavities. They employ an auxiliary qubit to report if a successful gate occurred. In this manner, the errors, which would have corrupted a deterministic gate, are converted into a non-unity probability of success: once successful the gate has a much higher fidelity than a similar deterministic gate. Specifically, we describe that a heralded , near-deterministic controlled phase gate (CZ-gate) with the conditional error arbitrarily close to zero and the success probability that approaches unity as the cooperativity of the system, C, becomes large. Furthermore, we describe an extension to near-deterministic N- qubit Toffoli gate with a favorable error scaling. These gates can be directly employed in quantum repeater networks to facilitate near-ideal entanglement swapping, thus greatly speeding up the entanglement distribution.

J. Borregaard; P. Kmr; E. M. Kessler; A. S. Srensen; M. D. Lukin

2015-01-05T23:59:59.000Z

188

Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors  

SciTech Connect (OSTI)

This Letter investigates abnormal channel width-dependent threshold voltage variation in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Unlike drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, the wider the channel, the larger the threshold voltage observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider channel devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast IV measurement is utilized to demonstrate the self-heating induced anomalous channel width-dependent threshold voltage variation.

Liu, Kuan-Hsien; Chou, Wu-Ching [Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Wu, Ming-Siou; Hung, Yi-Syuan; Sze, Simon M. [Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Hung, Pei-Hua; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Hsieh, Tien-Yu [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Yeh, Bo-Liang [Advanced Display Technology Research Center, AU Optronics, No. 1, Li-Hsin Rd. 2, Hsinchu Science Park, Hsinchu 30078, Taiwan (China)

2014-03-31T23:59:59.000Z

189

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network [OSTI]

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm GaN-on-Si...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

190

InP-and Graphene-based grating-gated transistors for tunable THz and mm-wave detection  

E-Print Network [OSTI]

layer. Silvaco Atlas 2-D device simulator (FEM analysis software) was used to determine the free carrier

Peale, Robert E.

191

A Fast Global Gate Collapsing Technique for High Performance Designs using Static CMOS and Pass Transistor Logic  

E-Print Network [OSTI]

of traditional technology mappers such as MIS 2 cannot be applied on the vir- tual library since the number that is similar to that of technology mapping, but without the restriction of a xed library size. The second and can handle all of the ISCAS85 benchmark circuits in minutes. A comparison of the results

Sapatnekar, Sachin

192

Provably minimal energy using coordinated DVS and power gating  

Science Journals Connector (OSTI)

Both energy and execution speed can be greatly impacted by clock and power gating, nonlinear voltage scaling, and leakage energy. We address the problem of coordinated power gating and dynamic voltage scaling (DVS) to minimize the overall energy consumption ...

Nathaniel A. Conos; Saro Meguerdichian; Foad Dabiri; Miodrag Potkonjak

2014-03-01T23:59:59.000Z

193

Effect of Oxygen on Ni-Silicided FUSI Metal Gate  

E-Print Network [OSTI]

Continual evolution of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-65 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...

Yu, H.P.

194

GATE Center of Excellence at UAB for Lightweight Materials and...  

Broader source: Energy.gov (indexed) [DOE]

Constante (PhD candidate) and Samuel Jasper (PhD candidate) working on composite beams 9 Accomplishments and Progress: GATE Directly Funded Students (2005-2011) GATE SCHOLAR...

195

Operating conditions of submerged gates and possibilities of improvement  

Science Journals Connector (OSTI)

1. Submerged gates, employed at high-head hydroelectric stations, do not completely meet the demands placed on t...

P. R. Khlopenkov

1971-06-01T23:59:59.000Z

196

Radar Vehicle Detection Within Four Quadrant Gate Crossings  

E-Print Network [OSTI]

Vehicle Detection System for Four-Quadrant Gate Warning Systems and Blocked Crossing Detection. Washington. . . . . Radar Vehicle Detection Within Four Quadrant Gate Crossings Dylan Horne 2014 Global Level and delay but ultimately in loss of life. Radar Vehicle Detection Within Four Quadrant Gate Crossings #12

Illinois at Urbana-Champaign, University of

197

3-dimensional modeling and simulation of surface and sidewall roughening during plasma etching  

E-Print Network [OSTI]

Line edge roughness (LER) on the sidewalls of gate electrodes in metal oxide semiconductor transistors is one of the most important issues in the manufacturing of modem integrated circuits (IC). The significance of LER ...

Kawai, Hiroyo

2008-01-01T23:59:59.000Z

198

Accuracy and Consistency of Respiratory Gating in Abdominal Cancer Patients  

SciTech Connect (OSTI)

Purpose: To evaluate respiratory gating accuracy and intrafractional consistency for abdominal cancer patients treated with respiratory gated treatment on a regular linear accelerator system. Methods and Materials: Twelve abdominal patients implanted with fiducials were treated with amplitude-based respiratory-gated radiation therapy. On the basis of daily orthogonal fluoroscopy, the operator readjusted the couch position and gating window such that the fiducial was within a setup margin (fiducial-planning target volume [f-PTV]) when RPM indicated beam-ON. Fifty-five pre- and post-treatment fluoroscopic movie pairs with synchronized respiratory gating signal were recorded. Fiducial motion traces were extracted from the fluoroscopic movies using a template matching algorithm and correlated with f-PTV by registering the digitally reconstructed radiographs with the fluoroscopic movies. Treatment was determined to be accurate if 50% of the fiducial area stayed within f-PTV while beam-ON. For movie pairs that lost gating accuracy, a MATLAB program was used to assess whether the gating window was optimized, the external-internal correlation (EIC) changed, or the patient moved between movies. A series of safety margins from 0.5 mm to 3 mm was added to f-PTV for reassessing gating accuracy. Results: A decrease in gating accuracy was observed in 44% of movie pairs from daily fluoroscopic movies of 12 abdominal patients. Three main causes for inaccurate gating were identified as change of global EIC over time (?43%), suboptimal gating setup (?37%), and imperfect EIC within movie (?13%). Conclusions: Inconsistent respiratory gating accuracy may occur within 1 treatment session even with a daily adjusted gating window. To improve or maintain gating accuracy during treatment, we suggest using at least a 2.5-mm safety margin to account for gating and setup uncertainties.

Ge, Jiajia; Santanam, Lakshmi; Yang, Deshan [Department of Radiation Oncology, Washington University School of Medicine, St Louis, Missouri (United States)] [Department of Radiation Oncology, Washington University School of Medicine, St Louis, Missouri (United States); Parikh, Parag J., E-mail: pparikh@radonc.wustl.edu [Department of Radiation Oncology, Washington University School of Medicine, St Louis, Missouri (United States)

2013-03-01T23:59:59.000Z

199

Gate-controlled ultraviolet photo-etching of graphene edges  

SciTech Connect (OSTI)

The chemical reactivity of graphene under ultraviolet (UV) light irradiation is investigated under positive and negative gate electric fields. Graphene edges are selectively etched when negative gate voltages are applied while the reactivity is significantly suppressed for positive gate voltages. Oxygen adsorption onto graphene is significantly affected by the Fermi level of the final state achieved during previous electrical measurements. UV irradiation after negative-to-positive gate sweeps causes predominant oxygen desorption while UV irradiation after gate sweeps in the opposite direction causes etching of graphene edges.

Mitoma, Nobuhiko; Nouchi, Ryo [Nanoscience and Nanotechnology Research Center, Osaka Prefecture University, Sakai, Osaka 599-8570 (Japan)] [Nanoscience and Nanotechnology Research Center, Osaka Prefecture University, Sakai, Osaka 599-8570 (Japan)

2013-11-11T23:59:59.000Z

200

Improving the fidelity of optical Zeno gates via distillation  

SciTech Connect (OSTI)

We have modeled the Zeno effect controlled-sign gate of Franson et al. [Phys. Rev. A 70, 062302 (2004)] and shown that high two-photon to one-photon absorption ratios, {kappa}, are needed for high fidelity free-standing operation. Hence we instead employ this gate for cluster state fusion, where the requirement for {kappa} is less restrictive. With the help of partially offline one-photon and two-photon distillations, we can achieve a fusion gate with unity fidelity but nonunit probability of success. We conclude that for {kappa}>2200, the Zeno fusion gate will out perform the equivalent linear optics gate.

Leung, Patrick M.; Ralph, Timothy C. [Centre for Quantum Computer Technology, Department of Physics, University of Queensland, Brisbane 4072 (Australia)

2006-12-15T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

AgraGate Carbon Credits Corporation | Open Energy Information  

Open Energy Info (EERE)

AgraGate Carbon Credits Corporation AgraGate Carbon Credits Corporation Jump to: navigation, search Name AgraGate Carbon Credits Corporation Place Des Moines, Iowa Zip 50266 Product Offset aggregators that work with American farmers, ranchers, and private forest owners, providing clients with cash flows produced by the sale of credits. Offsets are sold on the Chicago Climate Exchange References AgraGate Carbon Credits Corporation[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. AgraGate Carbon Credits Corporation is a company located in Des Moines, Iowa . References ↑ "AgraGate Carbon Credits Corporation" Retrieved from "http://en.openei.org/w/index.php?title=AgraGate_Carbon_Credits_Corporation&oldid=341882"

202

Arbitrary two-qubit computation in 23 elementary gates  

SciTech Connect (OSTI)

We address the problem of constructing quantum circuits to implement an arbitrary two-qubit quantum computation. We pursue circuits without ancilla qubits and as small a number of elementary quantum gates as possible. Our lower bound for worst-case optimal two-qubit circuits calls for at least 17 gates: 15 one-qubit rotations and 2 controlled-NOT (CNOT) gates. We also constructively prove a worst-case upper bound of 23 elementary gates, of which at most four (CNOT gates) entail multiqubit interactions. Our analysis shows that synthesis algorithms suggested in previous work, although more general, entail larger quantum circuits than ours in the special case of two qubits. One such algorithm has a worst case of 61 gates, of which 18 may be CNOT gates.

Bullock, Stephen S.; Markov, Igor L. [Department of Mathematics, The University of Michigan, Ann Arbor, Michigan 48109-2122, USA (United States); Mathematical and Computational Sciences Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8910, USA (United States); Department of Electrical Engineering and Computer Science, The University of Michigan, 1301 Beal Avenue-EECS, Ann Arbor, Michigan 48109-2122, USA (United States)

2003-07-01T23:59:59.000Z

203

Mechanically Adjustable Single-Molecule Transistors and Stencil Mask Nanofabrication of High-Resolution Scanning Probes .  

E-Print Network [OSTI]

??This dissertation presents the development of two original experimental techniques to probe nanoscale objects. The first one studies electronic transport in single organic molecule transistors (more)

Champagne, Alexandre

2005-01-01T23:59:59.000Z

204

Transistor-based filter for inhibiting load noise from entering a power supply  

DOE Patents [OSTI]

A transistor-based filter for inhibiting load noise from entering a power supply is disclosed. The filter includes a first transistor having an emitter coupled to a power supply, a collector coupled to a load, and a base. The filter also includes a first capacitor coupled between the base of the first transistor and a ground terminal. The filter further includes an impedance coupled between the base and a node between the collector and the load, or a second transistor and second capacitor. The impedance can be a resistor or an inductor.

Taubman, Matthew S

2013-07-02T23:59:59.000Z

205

Amorphous silicon thin film transistor as nonvolatile device.  

E-Print Network [OSTI]

particles before loaded into the deposition chamber. 2.2.2. Equipment for Plasma Processes Plasma-Enhanced Chemical Vapor...: Dr. Yue Kuo n-channel and p-channel amorphous-silicon thin-film transistors (a-Si:H TFTs) with copper electrodes prepared by a novel plasma etching process have been fabricated and studied. Their characteristics are similar to those of TFTs...

Nominanda, Helinda

2008-10-10T23:59:59.000Z

206

The design of a frequency modulated transistor oscillator  

E-Print Network [OSTI]

THE DESIGN OF A. FREQUENCY MODULATED TRANSISTOR OSCILLATOR A Thesis PHIL DEWEY FISHER Submitted to the Graduate School of the Agricultural and Mechanical College of Texas in partial fulfillment of the requirements for the degree of MASTER... OF SCIENCE August 19/9 ELECTRICAL ENGINEERING THE DESLGE OP A FREQUEECT MODULATED TRAESZSTOR OSCILLATOR A Thesis PHIL DEWEY PISHER Approved as to style and content hyt ai an of Co ittee ead of DepaFtnent August 1959 ACKNOWLEDGMENTS The author...

Fisher, Phil Dewey

1959-01-01T23:59:59.000Z

207

As-Received, Ozone Cleaned and Ar+ Sputtered Surfaces of Hafnium Oxide Grown by Atomic Layer Deposition and Studied by XPS  

SciTech Connect (OSTI)

In this study, X-ray photoelectron spectroscopy (XPS) characterization was performed on 47 nm thick hafnium oxide (HfO{sub 2}) films grown by atomic layer deposition using TEMA-Hf/H{sub 2}O at 250 C substrate temperature. HfO{sub 2} is currently being studied as a possible replacement for Silicon Oxide (SiO{sub 2}) as a gate dielectric in electronics transistors. XPS spectra were collected on a Physical Electronics Quantum 2000 Scanning ESCA Microprobe using a monochromatic Al K{sub a} X-ray (1486.7 eV) excitation source. The sample was analyzed under the following conditions: as received, after UV irradiation for five minutes, and after sputter cleaning with 2 kV Ar{sup +} ions for 180 seconds. Survey scans showed carbon, oxygen, and hafnium as the major species in the film, while the only minor species of argon and carbide was detected after sputtering. Adventitious carbon initially composed approximately 18.6 AT% of the surface, but after UV cleaning it was reduced to 2.4 AT%. This demonstrated that that the majority of carbon was due to adventitious carbon. However, after 2 kV Ar{sup +} sputtering there was still only trace amounts of carbon at {approx}1 AT%, Some of this trace carbon is now in the form of a carbide due to the interaction with Ar{sup +} used for sputter cleaning. Furthermore, the stoiciometric ratio of oxygen and hafnium is consistent with a high quality HfO{sub 2} film.

Engelhard, Mark H.; Herman, Jacob A.; Wallace, Robert; Baer, Donald R.

2012-06-27T23:59:59.000Z

208

Gates, Oregon: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Gates, Oregon: Energy Resources Gates, Oregon: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 44.7562329°, -122.4167483° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":44.7562329,"lon":-122.4167483,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

209

Patterning graphene nanostripes in substrate-supported functionalized graphene: A promising route to integrated, robust, and superior transistors  

Science Journals Connector (OSTI)

It is promising to apply quantum-mechanically confined graphene systems in field-effect transistors. High stability ... the main challenges facing the practical application of graphene transistors. Our understand...

Liang-feng Huang; Zhi Zeng

2012-06-01T23:59:59.000Z

210

High-Mobility Thin-Film Transistor Fabricated Using Hydrogenated Amorphous Silicon Deposited by Discharge of Disilane  

Science Journals Connector (OSTI)

Plasma-enhanced chemical vapor deposition of hydrogenated amorphous silicon (a-Si:H) film was investigated with emphasis on the effect of disilane flow rate. A coplanar thin-film transistor (TFT) was fabricated using this a-Si:H film. Silicon-hydrogen bond content in the a-Si:H film was measured by infrared absorption spectroscopy. With decrease in the disilane flow rate from 3.0 cm3/min to 1.5 cm3/min, the maximum field-effect electron mobility ( FE) of the TFT which depends on the gate voltage increased from 3.3 cm2/( Vs) to 4.9 cm2/( Vs), accompanied by a reduction in the silicon-hydrogen bond content. There was a negative correlation between FE and the silicon-hydrogen bond content in the a-Si:H film. The improvement mechanism of FE was discussed in terms of the chemical structure of the a-Si:H film.

Shigeichi Yamamoto; Junji Nakamura; Masatoshi Migitaka

1996-01-01T23:59:59.000Z

211

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

SciTech Connect (OSTI)

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

212

The effect of Ta doping in polycrystalline TiO{sub x} and the associated thin film transistor properties  

SciTech Connect (OSTI)

Tantalum (Ta) is suggested to act as an electron donor and crystal phase stabilizer in titanium oxide (TiO{sub x}). A transition occurs from an amorphous state to a crystalline phase at an annealing temperature above 300?C in a vacuum ambient. As the annealing temperature increases from 300?C to 450?C, the mobility increases drastically from 0.07 cm{sup 2}/Vs to 0.61 cm{sup 2}/Vs. The remarkable enhancement of thin film transistor performance is suggested to be due to the splitting of Ti 3d band orbitals as well as the increase in Ta{sup 5+} ions that can act as electron donors.

Ok, Kyung-Chul, E-mail: kchul2926@naver.com; Park, Yoseb, E-mail: jozeph.park@gmail.com; Park, Jin-Seong, E-mail: kbchung@dankook.ac.kr, E-mail: jsparklime@hanyang.ac.kr [Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of)] [Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Chung, Kwun-Bum, E-mail: kbchung@dankook.ac.kr, E-mail: jsparklime@hanyang.ac.kr [Department of Physics, Dankook University, 119 Dandae-ro, Dongnam-gu, Cheonan 330-714 (Korea, Republic of)] [Department of Physics, Dankook University, 119 Dandae-ro, Dongnam-gu, Cheonan 330-714 (Korea, Republic of)

2013-11-18T23:59:59.000Z

213

Ionic-Liquid Component Dependence of Carrier Injection and Mobility for Electric-Double-Layer Organic Thin-Film Transistors  

Science Journals Connector (OSTI)

Ionic-Liquid Component Dependence of Carrier Injection and Mobility for Electric-Double-Layer Organic Thin-Film Transistors ... The values of tan ? can be expressed by the following equation(1)where IC and IR are the currents of CIL and the parasitic resistance (RP), respectively, and ? is the angular frequency. ... We estimated the thickness (dOX) of the oxidized layer from the CV curves, using(2)where Q is the amount of charge calculated from the CV curve; VU is the unit cell volume; n is the number of molecules in the unit cell; n? is the number of the reaction electrons per one molecule; e is the elementary charge; and A is the area of the thin film. ...

Takuya Fujimoto; Michio M. Matsushita; Kunio Awaga

2012-02-07T23:59:59.000Z

214

SYSTEMATIC SYNTHESIS METHOD FOR ANALOGUE CIRCUITS PART III ALL-TRANSISTOR CIRCUIT SYNTHESIS  

E-Print Network [OSTI]

SYSTEMATIC SYNTHESIS METHOD FOR ANALOGUE CIRCUITS ­ PART III ALL-TRANSISTOR CIRCUIT SYNTHESIS David papers (subtitled Parts I and II) together present a systematic synthesis method for analogue circuits. This paper illustrates the synthesis method by deriving and analysing some known all- transistor circuits

Papavassiliou, Christos

215

Hybrid single-electron transistor as a source of quantized electric current  

E-Print Network [OSTI]

LETTERS Hybrid single-electron transistor as a source of quantized electric current JUKKA P. PEKOLA of a hybrid normal-metal­ superconductor turnstile in the form of a one-island single- electron transistor currents in the nano-ampere range but their accuracy is still limited. Surprisingly, a simple hybrid single

Loss, Daniel

216

DESIGN, MODELING, TESTING, AND SPICE PARAMETER EXTRACTION OF DIMOS TRANSISTOR IN 4H-SILICON CARBIDE  

E-Print Network [OSTI]

DESIGN, MODELING, TESTING, AND SPICE PARAMETER EXTRACTION OF DIMOS TRANSISTOR IN 4H-SILICON CARBIDE (DIMOS) transistor structure in 4H-Silicon Carbide (SiC) is presented. Simulation for transport Silicon carbide (SiC), a wide bandgap material, shows a tremendous potential for high temperature

Tolbert, Leon M.

217

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network [OSTI]

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

218

Graphene Transistors Fabricated via Transfer-Printing In Device Active-Areas  

E-Print Network [OSTI]

Graphene Transistors Fabricated via Transfer-Printing In Device Active-Areas on Large Wafer Xiaogan graphene islands from a graphite and then uses transfer printing to place the islands from the stamp from the printed graphene. The transistors show a hole and electron mobility of 3735 and 795 cm2/V

219

Theory of vibrational absorption sidebands in the Coulomb-blockade regime of single-molecule transistors  

E-Print Network [OSTI]

Theory of vibrational absorption sidebands in the Coulomb-blockade regime of single-molecule-driven vibrational nonequilibrium induces vibrational sidebands in single-molecule transistors which arise from.125306 PACS number s : 73.23.Hk, 73.63. b, 85.65. h I. INTRODUCTION Single-molecule junctions and transistors

von Oppen, Felix

220

Single-molecule transistor fabrication by self-aligned lithography and in situ molecular assembly  

E-Print Network [OSTI]

Single-molecule transistor fabrication by self-aligned lithography and in situ molecular assembly J of single-molecule transistors by self-aligned lithography and in situ molecular assembly. Ultrathin metal fabrication of electrodes that can be bridged by a single molecule remains a significant challenge

Hone, James

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene  

E-Print Network [OSTI]

Tunable Bandgap in Bilayer Graphene Yuanbo Zhang* 1 , Tsung-gate-tunable bandgap in graphene bilayers with magnitude asbands. In two- dimensional graphene bilayers this bandgap

Zhang, Yuanbo

2010-01-01T23:59:59.000Z

222

Penn State DOE Graduate Automotive Technology Education (Gate...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Graduate Automotive Technology Education (Gate) Program for In-Vehicle, High-Power Energy Storage Systems 2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program...

223

PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational...  

Office of Environmental Management (EM)

Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate...

224

GATE Center of Excellence at UAB for Lightweight Materials and...  

Broader source: Energy.gov (indexed) [DOE]

Constante (PhD candidate) and Samuel Jasper (PhD candidate) working on composite beams GATE courses (some newly developed, some based on tailoring content in existing...

225

Self-terminating diffraction gates femtosecond X-ray nanocrystallograp...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Self-terminating diffraction gates femtosecond X-ray nanocrystallography measurements Authors: Barty, A., Caleman, C., Aquila, A., Timneanu, N., Lomb, L., White, T. A., Andreasson,...

226

Sandia National Laboratories: ECIS and i-GATE: Innovation Hub...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

support system to accelerate the commercialization of innovative technologies related to green transportation and clean energy. There are now eight i-GATE clients developing fuel...

227

Improved design of a deep vertical-lift gate  

Science Journals Connector (OSTI)

1. Redesigning of the framework of a deep vertical-lift gate by replacing the multibeam framework by a two-beam ...

P. R. Khlopenkov

1986-04-01T23:59:59.000Z

228

Vehicle Technologies Office: Graduate Automotive Technology Education (GATE)  

Broader source: Energy.gov [DOE]

DOE established the Graduate Automotive Technology Education (GATE) Centers of Excellence to provide future generations of engineers and scientists with knowledge and skills in advanced automotive...

229

Coherence resonance in an unijunction transistor relaxation oscillator  

E-Print Network [OSTI]

The phenomenon of coherence resonance (CR) is investigated in an unijunction transistor relaxation oscillator (UJT-RO) and quantified by estimating the normal variance (NV). Depending upon the measuring points two types of NV curves have been obtained. We have observed that the degradations in coherency at higher noise amplitudes in our system is probably the result of direct interference of coherent oscillations and the stochastic perturbation. Degradation of coherency may be minimal if this direct interference of noise and coherent oscillations is eliminated.

Md. Nurujjaman; P. S. Bhattacharya; A. N. Sekar Iyengar; Sandip Sarkar

2009-02-02T23:59:59.000Z

230

Cavity-QED-based quantum phase gate  

E-Print Network [OSTI]

are detuned by an amount D from the cavity mode 1, i.e., vbc5n11D . A quantum phase gate with a p phase shift is implemented if the atom in its ground state uc& passes through the cavity such that ~1! the detuning D is equal to g2, and ~2! the interaction...- lowing. The effective Hamiltonian for the interaction, in the di- pole and rotating-wave approximations, is H5H01H1 , ~3! where H05\

Zubairy, M. Suhail; Kim, M.; Scully, Marlan O.

2003-01-01T23:59:59.000Z

231

Optical AND and NOT gates at 40 Gbps using electro-absorption modulator/photodiode pairs.  

SciTech Connect (OSTI)

We demonstrate an optical gate architecture using electro-absorption modulator/photodiode pairs to perform AND and NOT functions. Optical bandwidth for both gates reach 40 GHz. Also shown are AND gate waveforms at 40 Gbps.

Tauke-Pedretti, Anna; Overberg, Mark E.; Skogen, Erik J.; Alford, Charles Fred; Sullivan, Charles Thomas; Vawter, Gregory Allen; Peake, Gregory Merwin; Torres, David L.

2010-06-01T23:59:59.000Z

232

Modeling gated neutron images of THD capsules  

SciTech Connect (OSTI)

Time gating a neutron detector 28m from a NIF implosion can produce images at different energies. The brighter image near 14 MeV reflects the size and symmetry of the capsule 'hot spot'. Scattered neutrons, {approx}9.5-13 MeV, reflect the size and symmetry of colder, denser fuel, but with only {approx}1-7% of the neutrons. The gated detector records both the scattered neutron image, and, to a good approximation, an attenuated copy of the primary image left by scintillator decay. By modeling the imaging system the energy band for the scattered neutron image (10-12 MeV) can be chosen, trading off the decayed primary image and the decrease of scattered image brightness with energy. Modeling light decay from EJ399, BC422, BCF99-55, Xylene, DPAC-30, and Liquid A leads to a preference from BCF99-55 for the first NIF detector, but DPAC 30 and Liquid A would be preferred if incorporated into a system. Measurement of the delayed light from the NIF scintillator using implosions at the Omega laser shows BCF99-55 to be a good choice for down-scattered imaging at 28m.

Wilson, Douglas Carl [Los Alamos National Laboratory; Grim, Gary P [Los Alamos National Laboratory; Tregillis, Ian L [Los Alamos National Laboratory; Wilke, Mark D [Los Alamos National Laboratory; Morgan, George L [Los Alamos National Laboratory; Loomis, Eric N [Los Alamos National Laboratory; Wilde, Carl H [Los Alamos National Laboratory; Oertel, John A [Los Alamos National Laboratory; Fatherley, Valerie E [Los Alamos National Laboratory; Clark, David D [Los Alamos National Laboratory; Schmitt, Mark J [Los Alamos National Laboratory; Merrill, Frank E [Los Alamos National Laboratory; Wang, Tai - Sen F [Los Alamos National Laboratory; Danly, Christopher R [Los Alamos National Laboratory; Batha, Steven H [Los Alamos National Laboratory; Patel, M [LLNL; Sepke, S [LLNL; Hatarik, R [LLNL; Fittinghoff, D [LLNL; Bower, D [LLNL; Marinak, M [LLNL; Munro, D [LLNL; Moran, M [LLNL; Hilko, R [NSTEC; Frank, M [LLNL; Buckles, R [NSTEC

2010-01-01T23:59:59.000Z

233

Sizing sliding gate valves for steam service  

SciTech Connect (OSTI)

Sliding gate valves have been used in thousands of applications during the past 40 yr. While steam control is a common application for these valves, thy are also used to control other gases and liquids. The sliding gate design provides straight-through flow, which minimizes turbulence, vibration, and noise. Seats are self-cleaning and self-lapping to provide a tight, long-lasting shutoff. A correctly sized valve is essential for accurate control. Valve size should be determined by service and system requirements, not by the size of the existing pipeline. Sizing a valve on the basis of pipeline size usually results in an oversized valve and poor control. Generally, regulator size is smaller than pipe size. Whenever complete information is known (inlet pressure, outlet pressure, or pressure drop, and required flow), determine the valve flow coefficient (C{sub v}) using the equations in ANSI/ISA S75.01 or a flow sizing chart. Tables of values for various types of valves are available from manufacturers. However, when complete system requirements are not known, valve oversizing is prevented by determining the design capacity of piping downstream from the valve. The valve should not be sized to pass more flow than the maximum amount the pipe can handle at a reasonable velocity. An example calculation is given.

Bollinger, R. [Jordan Value, Cincinnati, OH (United States)

1995-11-06T23:59:59.000Z

234

Metal Oxides  

Science Journals Connector (OSTI)

Metal oxides are the class of materials having the widest application in gas sensors. This chapter presents information related to the application of various metal oxides in gas sensors designed on different p...

Ghenadii Korotcenkov

2013-01-01T23:59:59.000Z

235

A p-cell approach to integer gate sizing  

E-Print Network [OSTI]

cell (p-cell) approach to the generation of layouts of standard gates is presented. The use of constant delay model for gate delay estimation is proposed which eliminates the need for maintaining huge volumes of delay tables in the standard cell library...

Doddannagari, Uday

2009-05-15T23:59:59.000Z

236

Paying the Toll: A Political History of the Golden Gate Bridge and Highway District, 1923-1971  

E-Print Network [OSTI]

Final Environmental Statement Golden Gate Bridge, HighwayGolden Gate Bridge Highway and Transportation District, Draft Environmental

Dyble, Amy Louise Nelson

2003-01-01T23:59:59.000Z

237

Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors  

SciTech Connect (OSTI)

This paper investigates abnormal dimension-dependent thermal instability in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Device dimension should theoretically have no effects on threshold voltage, except for in short channel devices. Unlike short channel drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, for devices with either a relatively large channel width or a short channel length, the output drain current decreases instead of saturating with an increase in drain voltage. Moreover, the wider the channel and the shorter the channel length, the larger the threshold voltage and output on-state current degradation that is observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider/shorter channel length devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast I{sub D}-V{sub G} and modulated peak/base pulse time I{sub D}-V{sub D} measurements are utilized to demonstrate the self-heating induced anomalous dimension-dependent threshold voltage variation and on-state current degradation.

Liu, Kuan-Hsien; Chou, Wu-Ching, E-mail: tcchang3708@gmail.com, E-mail: wuchingchou@mail.nctu.edu.tw [Department of Electrophysics, National Chiao Tung University, Hsin-chu 300, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang3708@gmail.com, E-mail: wuchingchou@mail.nctu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Chen, Hua-Mao; Tai, Ya-Hsiang [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-chu 300, Taiwan (China); Tsai, Ming-Yen; Hung, Pei-Hua; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Wu, Ming-Siou; Hung, Yi-Syuan [Department of Electronics Engineering, National Chiao Tung University, Hsin-Chu 300, Taiwan (China); Hsieh, Tien-Yu [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Yeh, Bo-Liang [Advanced Display Technology Research Center, AU Optronics, No.1, Li-Hsin Rd. 2, Hsinchu Science Park, Hsin-Chu 30078, Taiwan (China)

2014-10-21T23:59:59.000Z

238

Deeply-scaled GaN high electron mobility transistors for RF applications  

E-Print Network [OSTI]

Due to the unique combination of large critical breakdown field and high electron velocity, GaN-based high electron mobility transistors (HEMTs) have great potential for next generation high power RF amplifiers. The ...

Lee, Dong Seup

2014-01-01T23:59:59.000Z

239

Millimeter-wave GaN high electron mobility transistors and their integration with silicon electronics  

E-Print Network [OSTI]

In spite of the great progress in performance achieved during the last few years, GaN high electron mobility transistors (HEMTs) still have several important issues to be solved for millimeter-wave (30 ~ 300 GHz) applications. ...

Chung, Jinwook W. (Jinwook Will)

2011-01-01T23:59:59.000Z

240

The bias-stress effect in pentacene organic thin-film transistors  

E-Print Network [OSTI]

Organic thin-film transistors (OTFTs) are promising for flexible large-area electronics. However, the bias-stress effect (BSE) in OTFTs causes operational instability that limits the usefulness of the OTFT technology in a ...

Ryu, Kyungbum

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

A high-mobility electron-transporting polymer for printed transistors  

Science Journals Connector (OSTI)

... Printed electronics is a revolutionary technology aimed at unconventional electronic device manufacture on plastic foils, and will probably rely on polymeric semiconductors for organic thin-film transistor (OTFT) ...

He Yan; Zhihua Chen; Yan Zheng; Christopher Newman; Jordan R. Quinn; Florian Dtz; Marcel Kastler; Antonio Facchetti

2009-01-21T23:59:59.000Z

242

Electric field engineering in GaN high electron mobility transistors  

E-Print Network [OSTI]

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

243

JOURNAL DE PHYSIQUE Colloque C4, supplkment au n09, Tome 49, septembre 1988  

E-Print Network [OSTI]

by ion implantation through an 80 nm thick gate'oxide. CIT 1 uses a metal gate. This process is very thick layer of platinum silicide with a resistivity of 8 Ohms per square is selectively deposited. The bipolar transistor surface is completely covered by this silicide. Both collector-base and base

Paris-Sud XI, Université de

244

Micro-mechanical logic for field produceable gate arrays  

E-Print Network [OSTI]

A paradigm of micro-mechanical gates for field produceable logic is explored. A desktop manufacturing system is sought after which is capable of printing functional logic devices in the field. A logic scheme which induces ...

Prakash, Manu

2005-01-01T23:59:59.000Z

245

On the Query Complexity of Perfect Gate Discrimination  

E-Print Network [OSTI]

On the Query Complexity of Perfect Gate Discrimination Giulio Chiribella1 , Giacomo Mauro D'Ariano2 queries are called at different time steps [5]. T Q C © Giulio Chiribella, Giacomo Mauro D

D'Ariano, Giacomo Mauro

246

How many copies are needed for gate discrimination?  

E-Print Network [OSTI]

How many copies are needed for gate discrimination? Giulio Chiribella1 , Giacomo Mauro D'Ariano2 Chiribella, Giacomo Mauro D'Ariano, and Martin Roetteler; licensed under Creative Commons License

D'Ariano, Giacomo Mauro

247

Parameter Mismatches, Chaos Synchronization and Fast Dynamic Logic Gates  

E-Print Network [OSTI]

By using chaos synchronization between non-identical multiple time delay semiconductor lasers with optoelectronic feedbacks, we demonstrate numerically how fast dynamic logic gates can be constructed. The results may be helpful to obtain a computational hardware with reconfigurable properties.

E. M. Shahverdiev

2009-07-02T23:59:59.000Z

248

Single-Step Implementation of Universal Quantum Gates  

SciTech Connect (OSTI)

We construct optimized implementations of the controlled-NOT and other universal two-qubit gates that, unlike many of the previously proposed protocols, are carried out in a single step. The new protocols require tunable interqubit couplings but, in return, show a significant improvement in the quality of gate operations. We make specific predictions for coupled Josephson junction qubits and compare them with the results of recent experiments.

Grigorenko, I.A.; Khveshchenko, D.V. [Department of Physics and Astronomy, University of North Carolina, Chapel Hill, North Carolina 27599 (United States)

2005-09-09T23:59:59.000Z

249

Self-aligned submicron gate length gallium arsenide MESFET  

E-Print Network [OSTI]

SELF-ALIGNED SUBMICRON GATE LENGTH GALLIUM ARSENIDE MESFET A Thesis by HSIEN-CHING HUANG Submitted to the Graduate College of Texas ASSAM University in partial fulfillment of the requirement for the degree ol' MASTER OF SCIENCE May 1987... Major Subject: Electrical Engineering SELF-ALIGNED SUBMICRON GATE LENGTH GALLIUM ARSENIDE MESFET A Thesis by HSIEN-CHING HUANG Approved as to style and content by: Mark. H. Weichold (Chairman of Committee) Donald L. Parker (Member) dali L...

Huang, Hsien-Ching

2012-06-07T23:59:59.000Z

250

Accelerometer-Based method for extracting respiratory and cardiac gating information for dual gating during nuclear medicine imaging  

Science Journals Connector (OSTI)

Both respiratory and cardiac motions reduce the quality and consistency of medical imaging specifically in nuclear medicine imaging. Motion artifacts can be eliminated by gating the image acquisition based on the respiratory phase and cardiac contractions ...

Mojtaba Jafari Tadi, Tero Koivisto, Mikko Pnkl, Ari Paasio

2014-01-01T23:59:59.000Z

251

Liquid crystal terahertz phase shifters with functional indium-tin-oxide nanostructures for biasing and alignment  

SciTech Connect (OSTI)

Indium Tin Oxide (ITO) nanowhiskers (NWhs) obliquely evaporated by electron-beam glancing-angle deposition can serve simultaneously as transparent electrodes and alignment layer for liquid crystal (LC) devices in the terahertz (THz) frequency range. To demonstrate, we constructed a THz LC phase shifter with ITO NWhs. Phase shift exceeding ?/2 at 1.0 THz was achieved in a ?517??m-thick cell. The phase shifter exhibits high transmittance (?78%). The driving voltage required for quarter-wave operation is as low as 5.66?V (rms), compatible with complementary metal-oxide-semiconductor (CMOS) and thin-film transistor (TFT) technologies.

Yang, Chan-Shan [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Tang, Tsung-Ta [Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan (China); Pan, Ru-Pin [Department of Electrophysics, National Chiao Tung University, Hsinchu 30078, Taiwan (China); Yu, Peichen [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Pan, Ci-Ling, E-mail: clpan@phys.nthu.edu.tw [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Frontier Research Center on Fundamental and Applied Science of Matters, Hsinchu 30013, Taiwan (China)

2014-04-07T23:59:59.000Z

252

Modeling Low-Dose-Rate Effects in Irradiated Bipolar-Base Oxides  

SciTech Connect (OSTI)

A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-dose-rate gain degradation in bipolar junction transistors. Multiple-trapping simulations show that space charge limited transport is partially responsible for low-dose-rate enhancement. At low dose rates, more holes are trapped near the silicon-oxide interface than at high dose rates, resulting in larger midgap voltage shifts at lower dose rates. The additional trapped charge near the interface may cause an exponential increase in excess base current, and a resultant decrease in current gain for some NPN bipolar technologies.

Cirba, C.R.; Fleetwood, D.M.; Graves, R.J.; Michez, A.; Milanowski, R.J.; Saigne, F.; Schrimpf, R.D.; Witczak, S.C.

1998-10-26T23:59:59.000Z

253

Discrimination between 1/f noise models in junctions field effect transistors and metal?oxide?semiconductor field effect transistors: Numerical results  

Science Journals Connector (OSTI)

The integrals given by Park e t a l. in an earlier paper [J. Appl. Phys. 52 296 (1981)] on 1/f noise are expressed in closed forms and evaluated numerically. The results show how the field dependent mobility affects the number fluctuation model and how the field dependent mobility and the field dependence of Hooges parameter ? affects the mobility fluctuation model. The latter effect is very strong and results in a large decrease in the noise spectrum at larger values of drain bias when compared with the elementary theory that neglects these field dependences. For relatively short channels the mobility fluctuation model gives a peak in the noise well before saturation in agreement with the experiments of Park e t a l. The effects of the field dependent mobility and of the field dependent ? on the noise resistance at saturation are evaluated numerically.

A. van der Ziel; R. J. J. Zijlstra; H. S. Park

1981-01-01T23:59:59.000Z

254

Beyond the Transistor | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Beyond the Transistor Beyond the Transistor Discovery & Innovation Stories of Discovery & Innovation Brief Science Highlights SBIR/STTR Highlights Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 10.12.11 Beyond the Transistor EFRC researchers fabricate a novel device for channeling light. Print Text Size: A A A Subscribe FeedbackShare Page Click to enlarge photo. Enlarge Photo Schematic of a GaAs 3D photonic crystal Image courtesy of the University of Illinois at Urbana-Champaign Schematic of a GaAs 3D photonic crystal (blue) containing an InGaAs light-emitting layer (red). The structure is lithographically patterned into the form of a cylindrical mesa with a ring electrode on the top surface (gold).

255

Transport properties of single-walled carbon nanotube transistors after gamma radiation treatment  

E-Print Network [OSTI]

potential for high-speed nanosize electronics and biosensors utilizing their superior electronic properties by the gate voltage. At the same time, this different behavior with gate voltage allows us to study is registered at the metal/ semiconductor interface as a result of combined effect of metal work function

Ural, Ant

256

Methane oxidation by an extremely acidophilic bacterium of the phylum Verrucomicrobia  

Science Journals Connector (OSTI)

... primarily through the microbial degradation of organic matter, but abiogenic methane emitted from seeps and geothermal areas is also a major contribution to the atmospheric budget, estimated at 4575? ... at 4575?Tg annually. Hells Gate (Tikitere), New Zealand, is a geothermal area rich in abiogenic methane. We studied methane oxidation in an area of woody ...

Peter F. Dunfield; Anton Yuryev; Pavel Senin; Angela V. Smirnova; Matthew B. Stott; Shaobin Hou; Binh Ly; Jimmy H. Saw; Zhemin Zhou; Yan Ren; Jianmei Wang; Bruce W. Mountain; Michelle A. Crowe; Tina M. Weatherby; Paul L. E. Bodelier; Werner Liesack; Lu Feng; Lei Wang; Maqsudul Alam

2007-11-14T23:59:59.000Z

257

Ligand-gated Diffusion Across the Bacterial Outer Membrane  

SciTech Connect (OSTI)

Ligand-gated channels, in which a substrate transport pathway is formed as a result of the binding of a small-molecule chemical messenger, constitute a diverse class of membrane proteins with important functions in prokaryotic and eukaryotic organisms. Despite their widespread nature, no ligand-gated channels have yet been found within the outer membrane (OM) of Gram-negative bacteria. Here we show, using in vivo transport assays, intrinsic tryptophan fluorescence and X-ray crystallography, that high-affinity (submicromolar) substrate binding to the OM long-chain fatty acid transporter FadL from Escherichia coli causes conformational changes in the N terminus that open up a channel for substrate diffusion. The OM long-chain fatty acid transporter FadL from E. coli is a unique paradigm for OM diffusion-driven transport, in which ligand gating within a {beta}-barrel membrane protein is a prerequisite for channel formation.

B Lepore; M Indic; H Pham; E Hearn; D Patel; B van den Berg

2011-12-31T23:59:59.000Z

258

Sensory gating in intracranial recordings The role of phase locking  

Science Journals Connector (OSTI)

For patients with schizophrenia, a deficient gating (or filtering) of sensory input has been described. One major approach to study this sensory gating is to measure event-related potentials (ERPs) in response to paired clicks. In these experiments, sensory gating is quantified as amplitude reduction of the ERP components P50 and N100 from the 1st to the 2nd stimulus. In ERP studies brain electrical signals are averaged over single trials. Alterations in phase locking might be one factor contributing to the observed deficits in sensory gating, but findings have been inconclusive as yet. In particular, the contribution of different frequency bands to the deficit required further investigation. We studied N100 gating by intracranial recordings in a sample of epilepsy patients and subdivided the group into good and poor gators of the intracranial ERP component N100. Data were evaluated by frequency specific wavelet-based phase and power analyses. Poor N100 gators had an increased phase locking in the frequency range from 6.015.1Hz after the 2nd stimulus, as compared to good gators. Other group differences were apparent already before the 2nd stimulus. Poor gators had less phase locked beta band activity (20.230.0Hz) than good gators 200315ms after the onset of the 1st stimulus. Within the group of poor gators, lower values of phase locking in this frequency range were also associated with lower gating ratios. The reduced beta band response in response to the 1st stimulus may reflect poorer memory encoding of the 1st stimulus in poor gators. This in turn might lead to increased demands to process the 2nd stimulus.

Timm Rosburg; Peter Trautner; Jrgen Fell; Karen Anne Moxon; Christian E. Elger; Nash N. Boutros

2009-01-01T23:59:59.000Z

259

Chemical composition and temperature dependent performance of ZnO-thin film transistors deposited by pulsed and continuous spray pyrolysis  

SciTech Connect (OSTI)

Zinc oxide thin film transistors (TFTs) deposited by continuous and pulsed spray pyrolysis were investigated to analyze process kinetics which make reduction of process temperature possible. Thus, fluid mechanics, chemical composition, electrical performance, and deposition and annealing temperature were systematically analyzed. It was found that ZnO layers continuously deposited at 360?C contained zinc oxynitrides, CO{sub 3}, and hydro carbonate groups from pyrolysis of basic zinc acetate. Statistically, every second wurtzite ZnO unit cell contained an impurity atom. The purity and performance of the ZnO-TFTs increased systematically with increasing deposition temperature due to an improved oxidation processes. At 500?C the zinc to oxygen ratio exceeded a high value of 0.96. Additionally, the ZnO film was not found to be in a stabilized state after deposition even at high temperatures. Introducing additional subsequent annealing steps stabilizes the film and allows the reduction of the overall thermal stress to the substrate. Further improvement of device characteristics was obtained by pulsed deposition which allowed a more effective transport of the by-products and oxygen. A significant reduction of the deposition temperature by 140?C was achieved compared to the same performance as in continuous deposition mode. The trap density close to the Fermi energy could be reduced by a factor of two to 4??10{sup 17}?eV{sup ?1}?cm{sup ?3} due to the optimized combustion process on the surface. The optimization of the deposition processes made the fabrication of TFTs with excellent performance possible. The mobility was high and exceeded 12 cm{sup 2}/V s, the subthreshold slope was 0.3 V dec{sup ?1}, and an on-set close to the ideal value of 0?V was achieved.

Ortel, Marlis; Balster, Torsten; Wagner, Veit [School of Engineering and Science, Jacobs University Bremen, Campus Ring 1, 28759 Bremen (Germany)

2013-12-21T23:59:59.000Z

260

On the Role of Hadamard Gates in Quantum Circuits  

E-Print Network [OSTI]

We study a reduced quantum circuit computation paradigm in which the only allowable gates either permute the computational basis states or else apply a "global Hadamard operation", i.e. apply a Hadamard operation to every qubit simultaneously. In this model, we discuss complexity bounds (lower-bounding the number of global Hadamard operations) for common quantum algorithms : we illustrate upper bounds for Shor's Algorithm, and prove lower bounds for Grover's Algorithm. We also use our formalism to display a gate that is neither quantum-universal nor classically simulable, on the assumption that Integer Factoring is not in BPP.

Dan Shepherd

2005-08-22T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Realizing Three-Qubit Quantum-Gate Operation in a Cavity-QED System  

Science Journals Connector (OSTI)

Three-qubit quantum phase-gate and C2-NOT gate realization in a cavity-QED system is proposed where highly detuned field modes interact with a four-level system in an...

Joshi, Amitabh; Xiao, Min

262

Deep gates of a new design for closure of diversion tunnels  

Science Journals Connector (OSTI)

1. The discussed gate has a number of merits: the absence of deformation of the stream (except for deformation w...

P. R. Khlopenkov

1968-02-01T23:59:59.000Z

263

HfO{sub x}N{sub y} gate dielectric on p-GaAs  

SciTech Connect (OSTI)

Plasma nitridation method is used for nitrogen incorporation in HfO{sub 2} based gate dielectrics for future GaAs-based devices. The nitrided HfO{sub 2} (HfO{sub x}N{sub y}) films on p-GaAs improve metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, hysteresis, and leakage current. An equivalent oxide thickness of 3.6 nm and a leakage current density of 10{sup -6} A cm{sup -2} have been achieved at V{sub FB}-1 V for nitrided HfO{sub 2} films. A nitride interfacial layer (GaAsO:N) was observed at HfO{sub 2}-GaAs interface, which can reduce the outdiffusion of elemental Ga and As during post-thermal annealing process. Such suppression of outdiffusion led to a substantial enhancement in the overall dielectric properties of the HfO{sub 2} film.

Dalapati, G. K.; Sridhara, A.; Wong, A. S. W.; Chia, C. K.; Chi, D. Z. [Institute of Materials Research and Engineering, A-STAR - Agency for Science, Technology and Research, 3 Research Link, Singapore 117602 (Singapore)

2009-02-16T23:59:59.000Z

264

Electron Injection Mechanism in Top-gate Amorphous Silicon Thin-film Transistors with Self-Aligned Silicide Source and Drain  

E-Print Network [OSTI]

Institute for the Science and Technology of Materials (PRISM), Department of Elect. Eng., Princeton. The devices exhibit a threshold voltage of 2.7V, saturation mobility of 1cm2 /Vs, subthreshold slope of 600m from 1cm2 /Vs at L=100µm to 0.65 cm2 /Vs at L=5µm while the observed effective threshold is independent

265

Top-gate thin-film transistors based on GaN channel layer Rongsheng Chen, Wei Zhou, and Hoi Sing Kwok  

E-Print Network [OSTI]

liquid gallium target. The GaN TFTs exhibit good electrical performance such as field effect mobility of 1 cm2 /Vs, threshold voltage of ?0.4 V, on/off current ratio of 105 , and subthreshold swing of 0 electrical sta- bility of ZnO-based TFTs is still a main issue preventing from commercialization.9 Bottom

266

Top-gate thin-film transistors based on GaN channel layer Rongsheng Chen, Wei Zhou, and Hoi Sing Kwok  

E-Print Network [OSTI]

exhibit good electrical performance such as field effect mobility of 1 cm2 /Vs, threshold voltage of ?0 and poly-Si TFTs.6­8 However, the poor electrical sta- bility of ZnO-based TFTs is still a main issue mobility (6 ? 10?2 cm2 /Vs) and low on/off current ratio (3 ? 103 ), due to local- ized gap states in Ga

267

Multi-analyte biosensors on a CF4 plasma treated Nb2O5-based membrane with an extended gate field effect transistor structure  

Science Journals Connector (OSTI)

Abstract Multianalyte biosensors were fabricated with an Nb2O5 pH-sensitive membrane on silicon substrate in an EGFET structure. Incorporation of CF4 plasma treatment with an appropriate time of 15s was found to improve material properties and enhance performance. Multiple material analyses including XRD, AFM and SIMS indicate that CF4 plasma treatment reduces dangling bonds and passivates defects by forming strong bonds. Results indicate that an Nb2O5-based EGFET exhibited good performance with a high degree of sensitivity, a low hysteresis voltage and a low drift rate. Overall sensing performance for various ions of Na+, K+, urea and glucose detection was also enhanced. Our research indicates that Nb2O5-based biosensors with CF4 treatment show promise for future industrial biosensing applications.

Chyuan-Haur Kao; Hsiang Chen; Lien-Tai Kuo; Jer-Chyi Wang; Yun-Ti Chen; Yu-Cheng Chu; Chian-You Chen; Chao-Sung Lai; Shan Wei Chang; Che Wei Chang

2014-01-01T23:59:59.000Z

268

Power and thermal effects of SRAM vs. Latch-Mux design styles and clock gating choices  

Science Journals Connector (OSTI)

This paper studies the impact on energy efficiency and thermal behavior of design style and clock-gating style in queue and array structures. These structures are major sources of power dissipation, and both design styles and various clock gating schemes ... Keywords: architecture, clock gating, power, temperature

Yingmin Li; Mark Hempstead; Patrick Mauro; David Brooks; Zhigang Hu; Kevin Skadron

2005-08-01T23:59:59.000Z

269

Geometric phase gate on an optical transition for ion trap quantum computation C. F. Roos,2  

E-Print Network [OSTI]

Geometric phase gate on an optical transition for ion trap quantum computation K. Kim,1 C. F. Roos We propose a geometric phase gate of two ion qubits that are encoded in two levels linked by an optical dipole-forbidden transition. Compared to hyperfine geometric phase gates mediated by electric

Blatt, Rainer

270

Steric Gate Variants of UmuC Confer UV Hypersensitivity on Escherichia coli  

Science Journals Connector (OSTI)

...on survival. FIG. 1. The steric gate residue of UmuC is predicted to approach...blue), and residues F10 and steric gate Y11 (red). The backbone of UmuC is shown...Homo sapiens. FIG. 2. The steric gate Y11 and F10 variants in UmuC cause...

Brenna W. Shurtleff; Jaylene N. Ollivierre; Mohammad Tehrani; Graham C. Walker; Penny J. Beuning

2009-05-29T23:59:59.000Z

271

Simple Template-Based Method to Produce Bradbury-Nielsen Gates  

E-Print Network [OSTI]

ARTICLES Simple Template-Based Method to Produce Bradbury-Nielsen Gates Oh Kyu Yoon, Ignacio A University, Stanford, California, USA A Bradbury-Nielsen gate (BNG) consists of two interleaved as a Bradbury-Nielsen gate (BNG), which consists of two interleaved and electrically isolated sets of wires

Zare, Richard N.

272

Nanometer scale linewidth control during etching of polysilicon gates in high-density plasmas  

Science Journals Connector (OSTI)

We address some of the plasma issues encountered for ultimate silicon gate patterning that should be fixed in order to establish the long term viability of plasma processes in integrated circuits manufacturing. For sub-100-nm gate dimensions, one of ... Keywords: CMOS scaling, critical dimension control, gate patterning, plasma etching

O. Joubert; E. Pargon; J. Foucher; X. Detter; G. Cunge; L. Vallier

2003-09-01T23:59:59.000Z

273

Engineering Light-Gated Ion Channels Matthew R. Banghart, Matthew Volgraf, and Dirk Trauner*  

E-Print Network [OSTI]

Engineering Light-Gated Ion Channels Matthew R. Banghart, Matthew Volgraf, and Dirk Trauner covers the molecular principles that guide the engineering of light-gated ion channels for applicationsVised Manuscript ReceiVed NoVember 6, 2006 ABSTRACT: Ion channels are gated by a variety of stimuli, including

Trauner, Dirk

274

Case Studies on Clock Gating and Local Routign for VLSI Clock Mesh  

E-Print Network [OSTI]

. This thesis deals with the introduction of 'reconfigurability' by using control structures like transmission gates between sub-clock meshes, thus enabling clock gating in clock mesh. By using the optimum value of size for PMOS and NMOS of transmission gate...

Ramakrishnan, Sundararajan

2010-10-12T23:59:59.000Z

275

Life cycle inventory for palm based plywood: A gate-to-gate case study  

Science Journals Connector (OSTI)

The oil palm industry heavily relies on the world market. It is essential to ensure that the oil palm industry is ready to meet the demands and expectation of these overseas customers on the environmental performance of the oil palm industry. Malaysia produces 13.9 million tons of oil palm biomass including oil palm trunk (OPT) frond and empty fruits bunches (EFB) annually. OPT felled in some oil palm plantations during replanting is transported to various industries and one such industry is the plywood factories. In order to gauge the environmental performance of the use of OPT as plywood a Life Cycle Assessment (LCA) study was conducted for palm based plywood. LCA is an important tool to assess the environmental performance of a product or process. Life cycle inventory (LCI) is the heart of a LCA study. This LCI study has a gate-to-gate system boundary and the functional unit is 1 m3 palm plywood produced and covers three types of plywood; Moisture Resistance Plywood (MR) Weather Boiling Proof Plywood Grade 1 (WBP Grade 1) at Factory D and Weather Boiling Proof Plywood Grade 2 (WBP Grade 2) at Factory E. Both factories use two different types of drying processes; conventional drying at Factory D and kiln drying at Factory E. This inventory data was collected from two factories (D and E) representing 40% of Malaysia palm plywood industry. The inputs are mainly the raw materials which are the oil palm trunks and tropical wood veneers and the energy from diesel and electricity from grid which is mainly used for the drying process. The other inputs include water urea formaldehyde phenol formaldehyde flour and melamine powder. The outputs are the biomass waste which consists of oil palm trunk off-cut and emission from boiler. Generally all types of plywood production use almost same materials and processing methods in different quantities. Due to the different process efficiency Factory D uses less input of raw materials and energy compared to Factory E.

Shamim Ahmad; Ismail Sahid; Vijaya Subramaniam; Halimah Muhamad; Anis Mokhtar

2013-01-01T23:59:59.000Z

276

TECH FORUM: [VERIFIED RTL TO GATES] Efficient RC power grid  

E-Print Network [OSTI]

TECH FORUM: [VERIFIED RTL TO GATES] Efficient RC power grid verification using node elimination proposes a novel approach to systematically reduce the power grid and accurately compute an upper bound on the voltage drops at power grid nodes that are retained. Furthermore, acriterion for the safety of nodes

Najm, Farid N.

277

Compressed sensing quantum process tomography for superconducting quantum gates  

E-Print Network [OSTI]

We apply the method of compressed sensing (CS) quantum process tomography (QPT) to characterize quantum gates based on superconducting Xmon and phase qubits. Using experimental data for a two-qubit controlled-Z gate, we obtain an estimate for the process matrix $\\chi$ with reasonably high fidelity compared to full QPT, but using a significantly reduced set of initial states and measurement configurations. We show that the CS method still works when the amount of used data is so small that the standard QPT would have an underdetermined system of equations. We also apply the CS method to the analysis of the three-qubit Toffoli gate with numerically added noise, and similarly show that the method works well for a substantially reduced set of data. For the CS calculations we use two different bases in which the process matrix $\\chi$ is approximately sparse, and show that the resulting estimates of the process matrices match each ther with reasonably high fidelity. For both two-qubit and three-qubit gates, we characterize the quantum process by not only its process matrix and fidelity, but also by the corresponding standard deviation, defined via variation of the state fidelity for different initial states.

Andrey V. Rodionov; Andrzej Veitia; R. Barends; J. Kelly; Daniel Sank; J. Wenner; John M. Martinis; Robert L. Kosut; Alexander N. Korotkov

2014-07-03T23:59:59.000Z

278

Quantification of Priority-OR gates in temporal fault trees  

Science Journals Connector (OSTI)

Fault Tree Analysis has been used in reliability engineering for many decades and has seen various modifications to enable it to analyse fault trees with dynamic and temporal gates so it can incorporate sequential failure in its analysis. Pandora is ... Keywords: Markov chains, Monte Carlo, Pandora, dynamic fault trees, fault trees, safety

Ernest Edifor; Martin Walker; Neil Gordon

2012-09-01T23:59:59.000Z

279

Quantum phase gate for optical qubits with cavity quantum optomechanics  

E-Print Network [OSTI]

We show that a cavity optomechanical system formed by a mechanical resonator simultaneously coupled to two modes of an optical cavity can be used for the implementation of quantum phase gate between optical qubits associated with the two intracavity modes. The scheme is realizable for sufficiently strong single-photon optomechanical coupling in the resolved sideband regime, and is robust against cavity losses.

Muhammad Asjad; Paolo Tombesi; David Vitali

2015-01-16T23:59:59.000Z

280

Advanced Gate Drive for the SNS High Voltage Converter Modulator  

SciTech Connect (OSTI)

SLAC National Accelerator Laboratory is developing a next generation H-bridge switch plate [1], a critical component of the SNS High Voltage Converter Modulator [2]. As part of that effort, a new IGBT gate driver has been developed. The drivers are an integral part of the switch plate, which are essential to ensuring fault-tolerant, high-performance operation of the modulator. The redesigned driver improves upon the existing gate drive in several ways. The new gate driver has improved fault detection and suppression capabilities; suppression of shoot-through and over-voltage conditions, monitoring of dI/dt and Vce(sat) for fast over-current detection and suppression, and redundant power isolation are some of the added features. In addition, triggering insertion delay is reduced by a factor of four compared to the existing driver. This paper details the design and performance of the new IGBT gate driver. A simplified schematic and description of the construction are included. The operation of the fast over-current detection circuits, active IGBT over-voltage protection circuit, shoot-through prevention circuitry, and control power isolation breakdown detection circuit are discussed.

Nguyen, M.N.; Burkhart, C.; Kemp, M.A.; /SLAC; Anderson, D.E.; /Oak Ridge

2009-05-07T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Controlling attosecond electron dynamics by phase-stabilized polarization gating  

E-Print Network [OSTI]

LETTERS Controlling attosecond electron dynamics by phase-stabilized polarization gating I. J. SOLA the signature of a single return of the electron wavepacket over a large range of energies. This temporally (low energy) and cut-off (high energy) harmonics, specific focusing conditions ensure that only

Loss, Daniel

282

Optical gating of perylene bisimide fluorescence using dithienylcyclopentene photochromic switches  

SciTech Connect (OSTI)

The emission of millions of fluorescence photons from a chromophore is controlled by the absorption of a few tens of photons in a photochromic molecule. The parameters that determine the efficiency of this process are investigated, providing insights for the development of an all-optical gate.

Prs, Martti; Khler, Jrgen, E-mail: juergen.koehler@uni-bayreuth.de [Experimental Physics IV, University of Bayreuth, 95440 Bayreuth (Germany)] [Experimental Physics IV, University of Bayreuth, 95440 Bayreuth (Germany); Grf, Katja; Bauer, Peter; Thelakkat, Mukundan [Applied Functional Polymers, University of Bayreuth, 95440 Bayreuth (Germany)] [Applied Functional Polymers, University of Bayreuth, 95440 Bayreuth (Germany)

2013-11-25T23:59:59.000Z

283

Anti-coherence based molecular electronics: XOR-gate response  

E-Print Network [OSTI]

Anti-coherence based molecular electronics: XOR-gate response Roi Baera,*, Daniel Neuhauserb 90095-1569, USA Received 18 August 2001 Abstract We point out and simulate the possible utility of anti-coherence phase condition on the loop structure, the transfer would be anti- coherent. By applying one or two

Baer, Roi

284

Fabrication of gated nano electron source for vacuum nanoelectronics  

Science Journals Connector (OSTI)

Abstract Many kinds of attractive new applications, such as image sensors, stationary X-ray sources, and the column-less SEM, are investigated as post field emission displays that use a gated nano electron source. The fabrication of the gated nano electron source is overviewed from the conventional method to the latest one, especially in regarding to the gate formation process. Multi-stacked gate electrode formation using an etch-back method was developed recently, which is a very attractive method for generating a focused electron beam. The traditional Spindt-type emitter fabrication method is also being improved to the one that is easier and applicable to large area substrates. Using a double-layered photoresist as a lift-off layer and using HiPIMS sputtering instead of an e-beam evaporator was proposed. Thin film-type FEA fabrication is also improved to make vertically standing thin film by ion irradiation, which is applicable for making an emitter array on a large sized substrate.

Masayoshi Nagao; Tomoya Yoshida

2015-01-01T23:59:59.000Z

285

Ann. Phys. (Leipzig) 9 (2000) 1112, 885 894 The single electron transistor and artificial atoms  

E-Print Network [OSTI]

Ann. Phys. (Leipzig) 9 (2000) 11­12, 885 ­ 894 The single electron transistor and artificial atoms M. A. Kastner Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139 USA, there is a close analogy between the confined electrons inside an SET and an atom. In this review, the physics

Wilczek, Frank

286

Bendable single crystal silicon thin film transistors formed by printing on plastic substrates  

E-Print Network [OSTI]

Bendable single crystal silicon thin film transistors formed by printing on plastic substrates E on plastic substrates using an efficient dry transfer printing technique. In these devices, free standing-Si is then transferred, to a specific location and with a controlled orientation, onto a thin plastic sheet

Rogers, John A.

287

A high-performance cryogenic amplifier based on a radio-frequency single electron transistor  

E-Print Network [OSTI]

A high-performance cryogenic amplifier based on a radio-frequency single electron transistor K, Sweden Received 23 May 2002; accepted 24 October 2002 We demonstrate a high-performance cryogenic-chip integrability, make it a good candidate for a general-purpose cryogenic amplifier for high impedance sources. We

Segall, Ken

288

HIGH-LEVEL MULTI-STEP INVERTER OPTIMIZATION, USING A MINIMUM NUMBER OF POWER TRANSISTORS.  

E-Print Network [OSTI]

HIGH-LEVEL MULTI-STEP INVERTER OPTIMIZATION, USING A MINIMUM NUMBER OF POWER TRANSISTORS. Juan 56-41-246-999 e-mail lmoran@renoir.die.udec.cl ABSTRACT Multilevel inverters with a large number-5]. Multi-level inverters can operate not only with PWM techniques but also with amplitude modulation (AM

Catholic University of Chile (Universidad Católica de Chile)

289

Physics 326 Spring 2014 1/15/14 Lab 4: DIODES AND TRANSISTORS  

E-Print Network [OSTI]

Physics 326 Spring 2014 1/15/14 1 Lab 4: DIODES AND TRANSISTORS Please read Faissler Chapters. The transformer has a center tap (i.e. a line connected to the center of the coil). Characterize the transformer Spring 2014 1/15/14 2 Describe the effect of the capacitor on the output. Repeat with a 0.1 F capacitor

Glashausser, Charles

290

SELF-HEATING PROCESS IN MICROWAVE TRANSISTORS Anthony E. Parker(1) and James G. Rathmell(2)  

E-Print Network [OSTI]

by the complex signals used in communication systems. Self-heating [1] and charge-trapping related to impactSELF-HEATING PROCESS IN MICROWAVE TRANSISTORS Anthony E. Parker(1) and James G. Rathmell(2) (1 of Electrical and Information Engineering, The University of Sydney, AUSTRALIA 2006, mailto: jimr

291

Fabrication of nanogapped single-electron transistors for transport studies of individual single-molecule magnets  

E-Print Network [OSTI]

Fabrication of nanogapped single-electron transistors for transport studies of individual single-molecule through individual single-molecule magnets SMMs . The devices were patterned via multiple layers molecules have received considerable attention over the last several years due to the introduction of single

del Barco, Enrique

292

High-Yield Sorting of Small-Diameter Carbon Nanotubes for Solar Cells and Transistors  

Science Journals Connector (OSTI)

High-Yield Sorting of Small-Diameter Carbon Nanotubes for Solar Cells and Transistors ... G.I.K. acknowledges the support of the Government of Canada and the Natural Sciences and Engineering Research Council of Canada (NSERC) in the form of the Banting Postdoctoral Fellowship. ...

Huiliang Wang; Ghada I. Koleilat; Peng Liu; Gonzalo Jimnez-Oss; Ying-Chih Lai; Michael Vosgueritchian; Ya Fang; Steve Park; Kendall N. Houk; Zhenan Bao

2014-01-31T23:59:59.000Z

293

AN ADAPTIVE MIXED SCHEME FOR ENERGY-TRANSPORT SIMULATIONS OF FIELD-EFFECT TRANSISTORS  

E-Print Network [OSTI]

AN ADAPTIVE MIXED SCHEME FOR ENERGY-TRANSPORT SIMULATIONS OF FIELD-EFFECT TRANSISTORS #3; STEFAN HOLST, ANSGAR J  UNGEL y AND PAOLA PIETRA z Abstract. Energy-transport models are used in semiconductor and energy of the electrons, coupled to the Poisson equation for the electrostatic potential. The movement

Pietra, Paola

294

Oxidation of Propane by Doped Nickel Oxides  

Science Journals Connector (OSTI)

... present study, however, indicate that in the absence of excess oxygen, direct oxidation of propane by the oxide lattice can occur.

D. W. McKEE

1964-04-11T23:59:59.000Z

295

Photo-Curable Polymer Blend Dielectrics for Advancing Organic Field-Effect Transistor Applications  

SciTech Connect (OSTI)

A solution method of photo-curable and -patternable polymer gate dielectrics was introduced by using blend solutions of poly(4-dimethylsilyl styrene) (PDMSS) and poly(melamine-co-formaldehyde) acrylate (PMFA). The fabrication was optimized to produce a smooth hydrophobic gate dielectric with good insulating and solvent-resistant properties. On the optimized PDMSS/PMFA blend gate dielectric, pentacene could grow into highly ordered structure, showing high electric performances for the resulting OFETs, as well as PTCDI-C13 and TES-ADT.

S Kim; K Hong; M Jang; J Jang; J Anthony; H Yang; C Park

2011-12-31T23:59:59.000Z

296

DOI: 10.1002/adma.200601908 Piezoelectric Gated Diode of a Single ZnO Nanowire**  

E-Print Network [OSTI]

Institute of Physics. DOI: 10.1063/1.2193468 Electrical and optoelectronic devices such as field class of organic optoelectronic devices has been demonstrated, i.e., organic light-emitting transistors

Wang, Zhong L.

297

Current limiters based on silicon pillar un-gated FET for field emission application  

E-Print Network [OSTI]

This research investigates the use of vertical silicon ungated field effect transistors (FETs) as current limiters to individuallycontrol emission current in a field emitter and provide a simple solution to three problems ...

Niu, Ying, M. Eng. Massachusetts Institute of Technology

2009-01-01T23:59:59.000Z

298

Presented at the 2003 USSD Annual Lecture, Charleston, South Carolina. April 2003. SPILLWAY GATE RELIABILITY IN THE CONTEXT OF  

E-Print Network [OSTI]

and operations are listed and illustrated through their application to the Thames Flood Barrier gates

Bowles, David S.

299

High-resolution depth proling of ultrathin gate oxides using medium-energy ion scattering  

E-Print Network [OSTI]

areas, such as vacuum techniques, accelerator technology, and ion±solid interactions, to operate and can Nuclear Instruments and Methods in Physics Research B 183 (2001) 146±153 www

Gustafsson, Torgny

300

Ultrathin organic transistors for chemical sensing Richard D. Yang, T. Gredig, Corneliu N. Colesniuc, Jeongwon Park, Ivan K. Schuller,  

E-Print Network [OSTI]

Lab, Materials Science and Engineering, Department of Physics and Department of Chemistry in the ultrathin transistors. CoPc was purchased from Sigma-Aldrich and purified by zone sublimation below 10

Kummel, Andrew C.

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

A compact transport and charge model for GaN-based high electron mobility transistors for RF applications  

E-Print Network [OSTI]

Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are rapidly emerging as front-runners in high-power mm-wave circuit applications. For circuit design with current devices and to allow sensible future ...

Radhakrishna, Ujwal

2013-01-01T23:59:59.000Z

302

THE GROWTH MECHANISMS OF ULTRATHIN GATE DIELECTRICS ON SILICON  

E-Print Network [OSTI]

in the passive oxidation regime, while etching in the active oxidation regime made the surface slightly rougher. A roughening regime is also observed in between the active and passive oxidation regimes and causes, I was fortunate to share a house with Alex See, from whom Qing-Tang heard about me and recruited me

Gustafsson, Torgny

303

South Gate, California: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Gate, California: Energy Resources Gate, California: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.954737°, -118.2120161° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.954737,"lon":-118.2120161,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

304

Ocean Gate, New Jersey: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Gate, New Jersey: Energy Resources Gate, New Jersey: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 39.926785°, -74.1337496° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.926785,"lon":-74.1337496,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

305

Synthesis of Reversible Functions Beyond Gate Count and Quantum Cost  

E-Print Network [OSTI]

Many synthesis approaches for reversible and quantum logic have been proposed so far. However, most of them generate circuits with respect to simple metrics, i.e. gate count or quantum cost. On the other hand, to physically realize reversible and quantum hardware, additional constraints exist. In this paper, we describe cost metrics beyond gate count and quantum cost that should be considered while synthesizing reversible and quantum logic for the respective target technologies. We show that the evaluation of a synthesis approach may differ if additional costs are applied. In addition, a new cost metric, namely Nearest Neighbor Cost (NNC) which is imposed by realistic physical quantum architectures, is considered in detail. We discuss how existing synthesis flows can be extended to generate optimal circuits with respect to NNC while still keeping the quantum cost small.

Robert Wille; Mehdi Saeedi; Rolf Drechsler

2010-04-26T23:59:59.000Z

306

Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN  

SciTech Connect (OSTI)

Double heterostructures of strained GaN quantum wells (QWs) sandwiched between relaxed AlN layers provide a platform to investigate the quantum-confined electronic and optical properties of the wells. The growth of AlN/GaN/AlN heterostructures with varying GaN quantum well thicknesses on AlN by plasma molecular beam epitaxy (MBE) is reported. Photoluminescence spectra provide the optical signature of the thin GaN QWs. Reciprocal space mapping in X-ray diffraction shows that a GaN layer as thick as ?28 nm is compressively strained to the AlN layer underneath. The density of the polarization-induced two-dimensional electron gas (2DEG) in the undoped heterostructures increases with the GaN QW thickness, reaching ?2.5??10{sup 13}/cm{sup 2}. This provides a way to tune the 2DEG channel density without changing the thickness of the top barrier layer. Electron mobilities less than ?400 cm{sup 2}/Vs are observed, leaving ample room for improvement. Nevertheless, owing to the high 2DEG density, strained GaN QW field-effect transistors with MBE regrown ohmic contacts exhibit an on-current density ?1.4?A/mm, a transconductance ?280 mS/mm, and a cut off frequency f{sub T}?104?GHz for a 100-nm-gate-length device. These observations indicate high potential for high-speed radio frequency and high voltage applications that stand to benefit from the extreme-bandgap and high thermal conductivity of AlN.

Li, Guowang; Song, Bo; Ganguly, Satyaki; Zhu, Mingda; Wang, Ronghua; Yan, Xiaodong; Verma, Jai; Protasenko, Vladimir; Grace Xing, Huili; Jena, Debdeep, E-mail: djena@nd.edu [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

2014-05-12T23:59:59.000Z

307

Nanoporous carbon tunable resistor/transistor and methods of production thereof  

DOE Patents [OSTI]

In one embodiment, a tunable resistor/transistor includes a porous material that is electrically coupled between a source electrode and a drain electrode, wherein the porous material acts as an active channel, an electrolyte solution saturating the active channel, the electrolyte solution being adapted for altering an electrical resistance of the active channel based on an applied electrochemical potential, wherein the active channel comprises nanoporous carbon arranged in a three-dimensional structure. In another embodiment, a method for forming the tunable resistor/transistor includes forming a source electrode, forming a drain electrode, and forming a monolithic nanoporous carbon material that acts as an active channel and selectively couples the source electrode to the drain electrode electrically. In any embodiment, the electrolyte solution saturating the nanoporous carbon active channel is adapted for altering an electrical resistance of the nanoporous carbon active channel based on an applied electrochemical potential.

Biener, Juergen; Baumann, Theodore F; Dasgupta, Subho; Hahn, Horst

2014-04-22T23:59:59.000Z

308

Thin film transistors on plastic substrates with reflective coatings for radiation protection  

DOE Patents [OSTI]

Fabrication of silicon thin film transistors (TFT) on low-temperature plastic substrates using a reflective coating so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The TFT can be used in large area low cost electronics, such as flat panel displays and portable electronics such as video cameras, personal digital assistants, and cell phones.

Wolfe, Jesse D. (Fairfield, CA); Theiss, Steven D. (Woodbury, MN); Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Wickbold, Paul (Walnut Creek, CA)

2006-09-26T23:59:59.000Z

309

Growth and properties of crystalline barium oxide on the GaAs(100) substrate  

SciTech Connect (OSTI)

Growing a crystalline oxide film on III-V semiconductor renders possible approaches to improve operation of electronics and optoelectronics heterostructures such as oxide/semiconductor junctions for transistors and window layers for solar cells. We demonstrate the growth of crystalline barium oxide (BaO) on GaAs(100) at low temperatures, even down to room temperature. Photoluminescence (PL) measurements reveal that the amount of interface defects is reduced for BaO/GaAs, compared to Al{sub 2}O{sub 3}/GaAs, suggesting that BaO is a useful buffer layer to passivate the surface of the III-V device material. PL and photoemission data show that the produced junction tolerates the post heating around 600?C.

Yasir, M.; Dahl, J.; Lng, J.; Tuominen, M.; Punkkinen, M. P. J.; Laukkanen, P., E-mail: pekka.laukkanen@utu.fi; Kokko, K. [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland)] [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Kuzmin, M. [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland) [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation); Korpijrvi, V.-M.; Polojrvi, V.; Guina, M. [Optoelectronics Research Centre, Tampere University of Technology, FI-33101 Tampere (Finland)] [Optoelectronics Research Centre, Tampere University of Technology, FI-33101 Tampere (Finland)

2013-11-04T23:59:59.000Z

310

Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices  

DOE Patents [OSTI]

A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.

Morse, Jeffrey D. (Martinez, CA); Contolini, Robert J. (Lake Oswego, OR)

2001-01-01T23:59:59.000Z

311

At the Boundary between Superconducting and Magnetic Oxides  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

At the Boundary between Superconducting and Magnetic Oxides The transistor, which shaped so much of our modern technology and economics, grew out of scientists' desire to gain a greater understanding of the interfaces between different materials. In the same way, today's materials scientists seek to expand our understanding of complex oxides by creating new states at the interface of two materials. Novel growth of complex oxides provides the ability to combine different materials with different and often antagonistic order parameters to create novel, strongly correlated states at the interface. As shown in the article, " Magnetism at the interface between ferromagnetic and superconducting oxides " in the April 2006 issue of Nature Physics, element-resolved x-ray probes and neutrons can be used to construct the first microscopic picture of interactions in a La[subscript 0.7]Ca[subscript 0.3]MnO[subscript 3]/YBa[subscript 2]Cu[subscript 3]O[subscript 7-x] superlattice.

312

Asphalt Oxidation Kinetics and Pavement Oxidation Modeling  

E-Print Network [OSTI]

Most paved roads in the United States are surfaced with asphalt. These asphalt pavements suffer from fatigue cracking and thermal cracking, aggravated by the oxidation and hardening of asphalt. This negative impact of asphalt oxidation on pavement...

Jin, Xin

2012-07-16T23:59:59.000Z

313

Simple trapped-ion architecture for high-fidelity Toffoli gates  

SciTech Connect (OSTI)

We discuss a simple architecture for a quantum toffoli gate implemented using three trapped ions. The gate, which, in principle, can be implemented with a single laser-induced operation, is effective under rather general conditions and is strikingly robust (within any experimentally realistic range of values) against dephasing, heating, and random fluctuations of the Hamiltonian parameters. We provide a full characterization of the unitary and noise-affected gate using three-qubit quantum process tomography.

Borrelli, Massimo [CM-DTC, SUPA, EPS/School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Mazzola, Laura [Turku Centre for Quantum Physics, Department of Physics and Astronomy, University of Turku, FI-20014 Turun yliopisto (Finland); School of Mathematics and Physics, Queen's University, BT7 1NN Belfast (United Kingdom); Paternostro, Mauro [School of Mathematics and Physics, Queen's University, BT7 1NN Belfast (United Kingdom); Maniscalco, Sabrina [CM-DTC, SUPA, EPS/School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Turku Centre for Quantum Physics, Department of Physics and Astronomy, University of Turku, FI-20014 Turun yliopisto (Finland)

2011-07-15T23:59:59.000Z

314

Geometric phase gate on an optical transition for ion trap quantum computation  

Science Journals Connector (OSTI)

We propose a geometric phase gate of two ion qubits that are encoded in two levels linked by an optical dipole-forbidden transition. Compared to hyperfine geometric phase gates mediated by electric dipole transitions, the gate has many interesting properties, such as very low spontaneous emission rates, applicability to magnetic field insensitive states, and use of a co-propagating laser beam geometry. We estimate that current technology allows for infidelities of around 10?4.

K. Kim; C. F. Roos; L. Aolita; H. Hffner; V. Nebendahl; R. Blatt

2008-05-08T23:59:59.000Z

315

Geometric phase gate on an optical transition for ion trap quantum computation  

E-Print Network [OSTI]

We propose a geometric phase gate of two ion qubits that are encoded in two levels linked by an optical dipole-forbidden transition. Compared to hyperfine geometric phase gates mediated by electric dipole transitions, the gate has many interesting properties, such as very low spontaneous emission rates, applicability to magnetic field insensitive states, and use of a co-propagating laser beam geometry. We estimate that current technology allows for infidelities of around 10$^{-4}$.

K. Kim; C. F. Roos; L. Aolita; H. Haeffner; V. Nebendahl; R. Blatt

2007-10-21T23:59:59.000Z

316

Increase of the reliability and cost effectiveness of the Leningrad flood control gates  

SciTech Connect (OSTI)

This paper presents the results of a detailed analysis of competing designs of rolling gates and floating radial gates for the Leningrad flood control system and describes from a hydraulic engineering standpoint those aspects of the gate designs which led to the conclusion that they did not have sufficient reliability for the loads encountered under flood conditions. Specific design revisions which take into account not only the flood loads but also the navigation and dock parts of the structures were investigated and recommended.

Khlopenkov, P.R.

1988-06-01T23:59:59.000Z

317

Micromachined Bradbury-Nielsen Gates Ignacio A. Zuleta, Griffin K. Barbula, Matthew D. Robbins, Oh Kyu Yoon, and Richard N. Zare*  

E-Print Network [OSTI]

Micromachined Bradbury-Nielsen Gates Ignacio A. Zuleta, Griffin K. Barbula, Matthew D. Robbins, Oh 94305-5080 Bradbury-Nielsen gates (BNGs) are a standard way for gating or steering beams of charged for axial gating of an ion beam is referred to as a Bradbury-Nielsen gate (BNG).6 Depending on the kinetic

Zare, Richard N.

318

Bill Gates and Deputy Secretary Poneman Discuss the Energy Technology Landscape  

Broader source: Energy.gov [DOE]

Bill Gates and Deputy Secretary of Energy Daniel Poneman discuss the future of energy technology during the twenty-second Plenary Meeting of the Nuclear Suppliers Group.

319

Reversible Switching of an Optical Gate Using Phase-Change Material and Si Waveguide  

Science Journals Connector (OSTI)

Optical gate switch that uses Ge2Sb2Te5phase-change material was fabricated and the reversible switching has been...

Ikuma, Yuichiro; Shoji, Yuya; Kuwahara, Masashi; Wang, Xiaomin; Kintaka, Kenji; Kawashima, Hitoshi; Tanaka, Daiki; Tsuda, Hiroyuki

320

Development of a time-gated system for Raman spectroscopy of biological samples  

Science Journals Connector (OSTI)

A time gating system has been constructed that is capable of recording high quality Raman spectra of highly fluorescing biological samples while operating below the photodamage...

Knorr, Florian; Smith, Zachary J; Wachsmann-Hogiu, Sebastian

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Locally observable conditions for the successful implementation of entangling multi-qubit quantum gates  

E-Print Network [OSTI]

The information obtained from the operation of a quantum gate on only two complementary sets of input states is sufficient to estimate the quantum process fidelity of the gate. In the case of entangling gates, these conditions can be used to predict the multi qubit entanglement capability from the fidelities of two non-entangling local operations. It is then possible to predict highly non-classical features of the gate such as violations of local realism from the fidelities of two completely classical input-output relations, without generating any actual entanglement.

Holger F. Hofmann; Ryo Okamoto; Shigeki Takeuchi

2005-09-01T23:59:59.000Z

322

Synthesis of Reversible Functions Using Various Gate Libraries and Design Specifications.  

E-Print Network [OSTI]

?? This dissertation is devoted to efficient automated logic synthesis of reversible circuits using various gate types and initial specifications. These Reversible circuits are of (more)

Alhagi, Nouraddin

2010-01-01T23:59:59.000Z

323

Coherence-Controlled Holographic Microscopy for Coherence-Gated Quantitative Phase Imaging  

Science Journals Connector (OSTI)

We show that the use of incoherent illumination in coherence-controlled holographic microscopy (CCHM) enables coherence-gated quantitative phase imaging of objects through turbid...

Slaby, Tomas; Kolman, Pavel; Dostal, Zbynek; Antos, Martin; Lostak, Martin; Krizova, Aneta; Collakova, Jana; Kollarova, Vera; Slaba, Michala; Vesely, Pavel; Chmelik, Radim

324

Rapid optimization of working parameters of microwave-driven multilevel qubits for minimal gate leakage  

E-Print Network [OSTI]

.0134 is the interaction between the qubits, .0020 .0136 M=L is the coupling constant, and x i , x ei , and h.0133x i .0134 (i .0136 1 and 2) are the canonical coordinate, normal- ized external flux, and Hamiltonian of the ith single qubit. Note... for the gate at the point B. The quality of a gate can be described by gate fidelity F .0017 Trace.0137.0026 P .0026 I .0138, where .0026 P and.0026 I are the physical and ideal density matrices after gate operation and the overline denotes averaging over all...

Zhou, Zhongyuan; Han, Siyuan; Chu, Shih-I

2005-09-16T23:59:59.000Z

325

E-Print Network 3.0 - affects voltage-gated calcium Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

modulate neuronal voltage-gated calcium cur- rents, we performed a whole-cell patch... that hippocampal neurons in an astrocyte-enriched environment show augmentation of...

326

Use of high-level design information for enabling automation of fine-grained power gating  

E-Print Network [OSTI]

Leakage power reduction through power gating requires considerable design and verification effort. Conventionally, extensive analysis is required for dividing a heterogeneous design into power domains and generating control ...

Agarwal, Abhinav

2014-01-01T23:59:59.000Z

327

Three-qubit phase gate based on cavity quantum electrodynamics  

E-Print Network [OSTI]

- mentation, such as linear ion traps #4;1#5;, liquid-state nuclear magnetic resonance #1;NMR#2; #4;2#5;, and cavity QED systems #4;3,4#5;. There are three requirements for implementing a quantum computer: Efficient manipulation and read out of an indi.... #4;6#5;, a scheme to implement a two-qubit quantum phase gate and one-qubit unitary operation implementation based on cavity QED was described. They choose the Fock states #6;0#7; and #6;1#7; of a high Q cavity mode as the two logical states of a...

Chang, Jun-Tao; Zubairy, M. Suhail

2008-01-01T23:59:59.000Z

328

Performance analysis of boron nitride embedded armchair graphene nanoribbon metaloxidesemiconductor field effect transistor with Stone Wales defects  

SciTech Connect (OSTI)

We study the performance of a hybrid Graphene-Boron Nitride armchair nanoribbon (a-GNR-BN) n-MOSFET at its ballistic transport limit. We consider three geometric configurations 3p, 3p + 1, and 3p + 2 of a-GNR-BN with BN atoms embedded on either side (2, 4, and 6 BN) on the GNR. Material properties like band gap, effective mass, and density of states of these H-passivated structures are evaluated using the Density Functional Theory. Using these material parameters, self-consistent Poisson-Schrodinger simulations are carried out under the Non Equilibrium Green's Function formalism to calculate the ballistic n-MOSFET device characteristics. For a hybrid nanoribbon of width ?5?nm, the simulated ON current is found to be in the range of 265??A280??A with an ON/OFF ratio 7.1 10{sup 6}7.4 10{sup 6} for a V{sub DD}?=?0.68?V corresponding to 10?nm technology node. We further study the impact of randomly distributed Stone Wales (SW) defects in these hybrid structures and only 2.5% degradation of ON current is observed for SW defect density of 3.18%.

Chanana, Anuja; Sengupta, Amretashis; Mahapatra, Santanu [Nano Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560 012 (India)

2014-01-21T23:59:59.000Z

329

Directions to USC, Gate 6 (Parking Structure A) 110 (Harbor Freeway) North  

E-Print Network [OSTI]

on Vermont Avenue Turn right at 36th Place/Downey Way and enter USC at Gate 6 5 (Golden State/Santa AnaDirections to USC, Gate 6 (Parking Structure A) 110 (Harbor Freeway) North Take the Exposition Boulevard exit Go straight through the 37th Street light. Keep left Go under the freeway bridge and across

Valero-Cuevas, Francisco

330

Electrochemical gating of individual single-wall carbon nanotubes observed by electron transport measurements and resonant  

E-Print Network [OSTI]

, the Fermi energy of a nanotube can be changed, as ions from the solution accu- mulate on the surface gating of nanotubes has been shown previously to effectively shift the Fermi energy of semiconducting with the laser energy, we can observe the Raman spectrum from a single SWNT.7 Electrochemical gating of nanotubes

331

Impact of tide gates on the migration of juvenile sea trout, Salmo trutta  

Science Journals Connector (OSTI)

Abstract As part of flood protection and land reclamation schemes, tide gates allow rivers to discharge to sea when open, and prevent salt water intrusion when closed. Their impact on diadromous fish migration between essential spawning and rearing habitats, and the effectiveness of mitigation measures, have received little consideration. The River Meon, UK, discharges to sea through four top-hung counterbalanced tide gates. In March 2012, the gates were replaced with new ones of the same design, but with an orifice installed in two of them partly to improve fish passage. Sixty downstream migrating juvenile sea trout, Salmo trutta, were trapped approximately 4.9km upstream of the tidal limit and tagged with acoustic transmitters in April 2011 (n=30) and 2012 (n=30). Tagged individuals were detected by acoustic receivers placed near the tide gates before (year 1) and after (year 2) orifice installation. Of the fish that approached the tide gates, 95.8% and 100.0% successfully passed in years 1 and 2, respectively. The speed of migration at the gates was slower than for upstream and downstream reaches, and was positively related to percentage of time the gates were open. Presence of the orifices did not influence delay. Overall, top-hung tide gates delayed sea trout migration, potentially increasing the risk of predation and energy expenditure during the vulnerable juvenile life stage.

G.V. Wright; R.M. Wright; P.S. Kemp

2014-01-01T23:59:59.000Z

332

Ambipolar silicon nanowire FETs with stenciled-deposited metal gate Davide Sacchetto  

E-Print Network [OSTI]

Ambipolar silicon nanowire FETs with stenciled-deposited metal gate Davide Sacchetto , Veronica Keywords: Schottky barrier Ambipolarity Si nanowire Stencil lithography FET Silicide a b s t r a c t We chemical vapor deposition (LPCVD) of amorphous Si (a-Si) and SiO2 layers as well as metal gate patterning

De Micheli, Giovanni

333

Surface application of molybdenum silicide onto gated poly-Si emitters for enhanced field emission performance  

E-Print Network [OSTI]

the merits of molybdenum Mo silicide formation on gated polycrystalline silicon poly-Si field emitters. Metal, any metal silicide can be adopted without reSurface application of molybdenum silicide onto gated poly-Si emitters for enhanced field emission

Lee, Jong Duk

334

Optimal Control of Airport Operations with Gate Capacity Constraints Harshad Khadilkar and Hamsa Balakrishnan  

E-Print Network [OSTI]

at Boston's Logan International Airport in the US are used to illustrate the advantages of the proposed for Boston Logan International Airport (BOS) is shown in Fig. 1. Gates at each of the four main terminalsOptimal Control of Airport Operations with Gate Capacity Constraints Harshad Khadilkar and Hamsa

Gummadi, Ramakrishna

335

Gate-modulated thermoelectric conversion in disordered nanowires: I. Low temperature coherent regime  

E-Print Network [OSTI]

Gate-modulated thermoelectric conversion in disordered nanowires: I. Low temperature coherent of a disordered nanowire in the presence of an external gate electrode which can be used for depleting the carrier and Gardner for describing the energy dependence of the localization length around the band edges allowing us

Recanati, Catherine

336

Microfluidic logic gates and timers{ Michael W. Toepke, Vinay V. Abhyankar and David J. Beebe*  

E-Print Network [OSTI]

Microfluidic logic gates and timers{ Michael W. Toepke, Vinay V. Abhyankar and David J. Beebe to create a number of microfluidic analogs to electronic circuit components. Three classes of components are demonstrated: (1) OR/AND, NOR/NAND, and XNOR digital microfluidic logic gates; (2) programmable, autonomous

Beebe, David J.

337

Asynchronous Gate-Diffusion----Input (GDI) Circuits Arkadiy Morgenshtein, Michael Moreinis and Ran Ginosar  

E-Print Network [OSTI]

1 Asynchronous Gate-Diffusion----Input (GDI) Circuits Arkadiy Morgenshtein, Michael Moreinis, Israel [ran@ee.technion.ac.il] Abstract: Novel Gate-Diffusion Input (GDI) circuits are applied to asynchronous design. A variety of GDI implementations are compared with typical CMOS asynchronous circuits

Ginosar, Ran

338

Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chip  

E-Print Network [OSTI]

Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate transformer integrated in a CMOS silicon die together with the gate driver and other required functions frequency through the coreless transformer. The chosen design methodology will be explained and experimental

Paris-Sud XI, Université de

339

PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

MedGate Occupational MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) More Documents & Publications PIA - Savannah River Nuclear Solution (SRNS) Procurement Cycle System (PCS) PIA - Savannah River Nuclear Solutions (SRNS) Human Resource Management

340

Optimal control for fast and high-fidelity quantum gates in coupled superconducting flux qubits  

E-Print Network [OSTI]

We apply the quantum optimal control theory based on the Krotov method to implement single-qubit $X$ and $Z$ gates and two-qubit CNOT gates for inductively coupled superconducting flux qubits with fixed qubit transition frequencies and fixed off-diagonal qubit-qubit coupling. Our scheme that shares the same advantage of other directly coupling schemes requires no additional coupler subcircuit and control lines. The control lines needed are only for the manipulation of individual qubits (e.g., a time-dependent magnetic flux or field applied on each qubit). The qubits are operated at the optimal coherence points and the gate operation times (single-qubit gates $magnetic-field-induced single-qubit interactions and two-qubit couplings. The effect of leakage to higher energy-level states and the effect of qubit decoherence on the quantum gate operations are also discussed.

Shang-Yu Huang; Hsi-Sheng Goan

2014-06-30T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Oxidation of propylene over copper oxide catalysts  

E-Print Network [OSTI]

to the study of propylene oxidation. Dunlop (17) reported that small quantities of iron compounds substantially enhanced the catalytic activity of chromia-alumina catalysts with respect to propylene oxidation, Woodharn (72) has suggested that under... between 360 C and 430oC the rate of propane oxidation decreases as the teznperature is increased, and the rate of conversion to olefins, especially propylene, becomes progressively greater. Above 430 C the proportion of propane converted to ethylene in...

Billingsley, David Stuart

2012-06-07T23:59:59.000Z

342

A Graphene Quantum Dot with a Single Electron Transistor as Integrated Charge Sensor  

E-Print Network [OSTI]

We have developed an etching process to fabricate a quantum dot and a nearby single electron transistor as a charge detector in a single layer graphene. The high charge sensitivity of the detector is used to probe Coulomb diamonds as well as excited spectrum in the dot, even in the regime where the current through the quantum dot is too small to be measured by conventional transport means. The graphene based quantum dot and integrated charge sensor serve as an essential building block to form a solid-state qubit in a nuclear-spin-free quantum world.

Ling-Jun Wang; Gang Cao; Tao Tu; Hai-Ou Li; Cheng Zhou; Xiao-Jie Hao; Zhan Su; Guang-Can Guo; Guo-Ping Guo; Hong-Wen Jiang

2010-08-28T23:59:59.000Z

343

Radio frequency ion source operated with field effect transistor based radio frequency system  

SciTech Connect (OSTI)

Characteristics of radio frequency (RF) plasma production are investigated using a field effect transistor inverter power supply as an RF wave source. With the frequency of around 0.3 MHz, an electron density over 10{sup 18} m{sup -3} is produced in argon plasma. Although lower densities are obtained in hydrogen plasma, it drastically increased up to 5x10{sup 18} m{sup -3} with an axial magnetic field of around 100 G applied in the driver region. Effects of the magnetic field and gas pressure are investigated in the RF produced plasma with the frequency of several hundred kilohertz.

Ando, A.; Komuro, A.; Matsuno, T. [Department of Electrical Engineering, Tohoku University, Sendai 980-8759 (Japan); Tsumori, K.; Takeiri, Y. [National Institute for Fusion Science, Toki 509-5292 (Japan)

2010-02-15T23:59:59.000Z

344

REVUE DE PHYSIQUE APPLIQUE Simulation d'un transistor MOS silicium-sur-isolant dsertion profonde  

E-Print Network [OSTI]

tensions de grilles avant (Vg1) et arrière (Vg2) appliquées. Nous dédui- sons aussi les caractéristiques Id(Vg1, Vg2) à faible tension de drain. Les caractéristiques Id(Vg2) simulées sont comparées aux caractéristiques Id(Vg2) obtenues avec des transistors CMOS/SOS. Le saphir de ces dispositifs a été localement

Boyer, Edmond

345

Impact of graphene polycrystallinity on the performance of graphene field-effect transistors  

SciTech Connect (OSTI)

We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries and can be used to guide the further development and optimization of graphene-based electronic devices.

Jimnez, David; Chaves, Ferney [Departament d'Enginyeria Electrnica, Escola d'Enginyeria, Universitat Autnoma de Barcelona, 08193-Bellaterra (Spain); Cummings, Aron W.; Van Tuan, Dinh [ICN2, Institut Catal de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); Kotakoski, Jani [Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Wien (Austria); Department of Physics, University of Helsinki, P.O. Box 43, 00014 University of Helsinki (Finland); Roche, Stephan [ICN2, Institut Catal de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); ICREA, Instituci Catalana de Recerca i Estudis Avanats, 08070 Barcelona (Spain)

2014-01-27T23:59:59.000Z

346

Dopant characterization in self-regulatory plasma doped fin field-effect transistors by atom probe tomography  

SciTech Connect (OSTI)

Fin field-effect transistors are promising next-generation electronic devices, and the identification of dopant positions is important for their accurate characterization. We report atom probe tomography (APT) of silicon fin structures prepared by a recently developed self-regulatory plasma doping (SRPD) technique. Trenches between fin-arrays were filled using a low-energy focused ion beam to directly deposit silicon, which allowed the analysis of dopant distribution by APT near the surface of an actual fin transistor exposed to air. We directly demonstrate that SRPD can achieve a boron concentration above 1 x 10{sup 20} atoms/cm{sup 3} at the fin sidewall.

Takamizawa, H.; Shimizu, Y.; Nozawa, Y.; Toyama, T.; Nagai, Y. [Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Morita, H.; Yabuuchi, Y.; Ogura, M. [Panasonic Corporation, Moriguchi, Osaka 570-8501 (Japan)

2012-02-27T23:59:59.000Z

347

First-principles calculations of defects in oxygen-deficient silica exposed to hydrogen  

Science Journals Connector (OSTI)

Hydrogen-related defects and oxygen vacancies in silica are analyzed using first-principles density-functional calculations. Energetics, structures, charge-state levels, and hyperfine parameters are determined. These calculations identify the hydrogen bridge related to the E4? center as the defect responsible for the stress-induced leakage current, a forerunner of dielectric breakdown of gate oxides in transistors.

Peter E. Blchl

2000-09-01T23:59:59.000Z

348

Simultaneous Modification of Bottom-Contact Electrode and Dielectric Surfaces for Organic Thin-Film Transistors Through Single-Component Spin-Cast Monolayers  

SciTech Connect (OSTI)

An efficient process is developed by spin-coating a single-component, self-assembled monolayer (SAM) to simultaneously modify the bottom-contact electrode and dielectric surfaces of organic thin-film transistors (OTFTs). This efficient interface modification is achieved using n-alkyl phosphonic acid based SAMs to prime silver bottom-contacts and hafnium oxide (HfO{sub 2}) dielectrics in low-voltage OTFTs. Surface characterization using near edge X-ray absorption fine structure (NEXAFS) spectroscopy, X-ray photoelectron spectroscopy (XPS), attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, atomic force microscopy (AFM), and spectroscopic ellipsometry suggest this process yields structurally well-defined phosphonate SAMs on both metal and oxide surfaces. Rational selection of the alkyl length of the SAM leads to greatly enhanced performance for both n-channel (C60) and p-channel (pentacene) based OTFTs. Specifically, SAMs of n-octylphos-phonic acid (OPA) provide both low-contact resistance at the bottom-contact electrodes and excellent interfacial properties for compact semiconductor grain growth with high carrier mobilities. OTFTs based on OPA modifi ed silver electrode/HfO{sub 2} dielectric bottom-contact structures can be operated using < 3V with low contact resistance (down to 700 Ohm-cm), low subthreshold swing (as low as 75 mV dec{sup -1}), high on/off current ratios of 107, and charge carrier mobilities as high as 4.6 and 0.8 cm{sup 2} V{sup -1} s{sup -1}, for C60 and pentacene, respectively. These results demonstrate that this is a simple and efficient process for improving the performance of bottom-contact OTFTs.

O Acton; M Dubey; t Weidner; K OMalley; T Kim; G Ting; D Hutchins; J Baio; T Lovejoy; et al.

2011-12-31T23:59:59.000Z

349

Examination of geometric and dosimetric accuracies of gated step-and-shoot intensity modulated radiation therapy  

SciTech Connect (OSTI)

Due to the complicated technical nature of gated radiation therapy, electronic and mechanical limitations may affect the precision of delivery. The purpose of this study is to investigate the geometric and dosimetric accuracies of gated step-and-shoot intensity modulated radiation treatments (SS-IMRT). Unique segmental MLC plans are designed, which allow quantitative testing of the gating process. Both ungated and gated deliveries are investigated for different dose sizes, dose rates, and gating window times using a commercial treatment system (Varian Trilogy) together with a respiratory gating system [Varian Real-Time Position Management system]. Radiographic film measurements are used to study the geometric accuracy, where it is found that with both ungated and gated SS-IMRT deliveries the MLC leaf divergence away from planned is less than or equal to the MLC specified leaf tolerance value for all leafs (leaf tolerance being settable from 0.5-5 mm). Nevertheless, due to the MLC controller design, failure to define a specific leaf tolerance value suitable to the SS-IMRT plan can lead to undesired geometric effects, such as leaf motion of up to the maximum 5 mm leaf tolerance value occurring after the beam is turned on. In this case, gating may be advantageous over the ungated case, as it allows more time for the MLC to reach the intended leaf configuration. The dosimetric precision of gated SS-IMRT is investigated using ionization chamber methods. Compared with the ungated case, it is found that gating generally leads to increased dosimetric errors due to the interruption of the 'overshoot phenomena.' With gating the average timing deviation for intermediate segments is found to be 27 ms, compared to 18 ms for the ungated case. For a plan delivered at 600 MU/min this would correspond to an average segment dose error of {approx}0.27 MU and {approx}0.18 MU for gated and ungated deliveries, respectively. The maximum dosimetric errors for individual intermediate segments are found to deviate by up to {approx}0.64 MU from their planned value when delivered at 600 MU/min using gating, this compares to only {approx}0.32 MU for the ungated case.

Wiersma, R. D.; Xing, L. [Department of Radiation Oncology, Stanford University School of Medicine, Stanford, California 94305-5847 (United States)

2007-10-15T23:59:59.000Z

350

Solid Oxide Fuel Cells  

Science Journals Connector (OSTI)

A Solid Oxide Fuel Cell (SOFC) is typically composed of two porous electrodes, interposed between an electrolyte made of a particular solid oxide ceramic material. The system originates from the work of Nernst...

Nigel M. Sammes; Roberto Bove; Jakub Pusz

2006-01-01T23:59:59.000Z

351

Abstract --Design guidelines are provided to improve the thermal stability of three-finger bipolar transistors. Experiments  

E-Print Network [OSTI]

in selfheating and mutual thermal resistances, which are extracted through accurate 3-D numerical simulations. To avoid strong asymmetries between the mutual thermal resistances of two adjacent fingers compared to two of the thermal resistance of the transistors; as a consequence, selfheating and thermal coupling among

Technische Universiteit Delft

352

Stripline microchannel plate image intensifier tubes (MCPTS) for nanosecond optical gating applications  

SciTech Connect (OSTI)

Shuttering characteristics of low impedance stripline geometry microchannel plate image intensifier tubes (MCPTs) with 50% transmissive nickel undercoated S-20 photocathodes are discussed. Iris-free shutter sequences with 50 to 75 micron resolution at optical gate times of 500ps to 2ns were measured for typical samples from two manufacturers. Shutter sequences clearly showing gate pulse propagation velocities for this MCPT design when externally driven by impedance matched circuitry are contrasted with non-directional sequences obtained from unmatched coupling of the gate pulse. 7 refs., 7 figs.

Yates, G.J.; Jaramillo, S.A.; Zagarino, P.; Thomas, M.

1986-01-01T23:59:59.000Z

353

Gates controlled parallel-coupled double quantum dot on both single layer and bilayer graphene  

E-Print Network [OSTI]

Here we report the fabrication and quantum transport measurements of gates controlled parallel-coupled double quantum dot on both bilayer and single layer graphene. It is shown that the interdot coupling strength of the parallel double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the graphene parallel-coupled double dot can be extracted from the honeycomb charge stability diagrams revealed through the transport measurements.

Lin-Jun Wang; Guo-Ping Guo; Da Wei; Gang Cao; Tao Tu; Ming Xiao; Guang-Can Guo; A. M. Chang

2011-04-22T23:59:59.000Z

354

Integrating respiratory gating into a megavoltage cone-beam CT system  

SciTech Connect (OSTI)

We have previously described a low-dose megavoltage cone beam computed tomography (MV CBCT) system capable of producing projection image using one beam pulse. In this study, we report on its integration with respiratory gating for gated radiotherapy. The respiratory gating system tracks a reflective marker on the patient's abdomen midway between the xiphoid and umbilicus, and disables radiation delivery when the marker position is outside predefined thresholds. We investigate two strategies for acquiring gated scans. In the continuous rotation-gated acquisition, the linear accelerator (LINAC) is set to the fixed x-ray mode and the gantry makes a 5 min, 360 deg.continuous rotation, during which the gating system turns the radiation beam on and off, resulting in projection images with an uneven distribution of projection angles (e.g., in 70 arcs each covering 2 deg.). In the gated rotation-continuous acquisition, the LINAC is set to the dynamic arc mode, which suspends the gantry rotation when the gating system inhibits the beam, leading to a slightly longer (6-7 min) scan time, but yielding projection images with more evenly distributed projection angles (e.g., {approx}0.8 deg.between two consecutive projection angles). We have tested both data acquisition schemes on stationary (a contrast detail and a thoracic) phantoms and protocol lung patients. For stationary phantoms, a separate motion phantom not visible in the images is used to trigger the RPM system. Frame rate is adjusted so that approximately 450 images (13 MU) are acquired for each scan and three-dimensional tomographic images reconstructed using a Feldkamp filtered backprojection algorithm. The gated rotation-continuous acquisition yield reconstructions free of breathing artifacts. The tumor in parenchymal lung and normal tissues are easily discernible and the boundary between the diaphragm and the lung sharply defined. Contrast-to-noise ratio (CNR) is not degraded relative to nongated scans of stationary phantoms. The continuous rotation-gated acquisition scan also yields tomographic images with discernible anatomic features; however, streak artifacts are observed and CNR is reduced by approximately a factor of 4. In conclusion, we have successfully developed a gated MV CBCT system to verify the patient positioning for gated radiotherapy.

Chang Jenghwa; Sillanpaa, Jussi; Ling, Clifton C.; Seppi, Edward; Yorke, Ellen; Mageras, Gikas; Amols, Howard [Department of Medical Physics, Memorial Sloan-Kettering Cancer Center, New York, New York 10021 (United States); Ginzton Technology Center, Varian Medical Systems, Mountain View, California 94043 (United States); Department of Medical Physics, Memorial Sloan-Kettering Cancer Center, New York, New York 10021 (United States)

2006-07-15T23:59:59.000Z

355

Demonstration of a fully tuneable entangling gate for continuous-variable one-way quantum computation  

E-Print Network [OSTI]

We introduce a fully tuneable entangling gate for continuous-variable one-way quantum computation. We present a proof-of-principle demonstration by propagating two independent optical inputs through a three-mode linear cluster state and applying the gate in various regimes. The genuine quantum nature of the gate is confirmed by verifying the entanglement strength in the output state. Our protocol can be readily incorporated into efficient multi-mode interaction operations in the context of large-scale one-way quantum computation, as our tuning process is the generalisation of cluster state shaping.

Shota Yokoyama; Ryuji Ukai; Seiji C. Armstrong; Jun-ichi Yoshikawa; Peter van Loock; Akira Furusawa

2014-10-02T23:59:59.000Z

356

TiO{sub 2} nanotube-based field effect transistors and their application as humidity sensors  

SciTech Connect (OSTI)

Highlights: Black-Right-Pointing-Pointer Individual TiO{sub 2} nanotubes fabricated by directly anodizing a Ti foil followed by ultrasonification. Black-Right-Pointing-Pointer Individual TiO{sub 2} nanotubes used to construct field effect transistors. Black-Right-Pointing-Pointer Electrical properties measured from the TiO{sub 2} nanotube-based field effect transistors. Black-Right-Pointing-Pointer Sensitive response of the TiO{sub 2} nanotube-based field effect transistors to water vapor. -- Abstract: TiO{sub 2} nanotubes are the building units of various devices of energy- and environment-related applications and the property studies of individual TiO{sub 2} nanotubes are important to understand and improve the performance of TiO{sub 2} nanotubes-based devices. Here we report the electrical property study of individual TiO{sub 2} nanotubes enabled by the construction of field effect transistors based on individual TiO{sub 2} nanotubes. It is found that individual TiO{sub 2} nanotubes exhibit typical n-type electrical conduction characteristics, with electron mobility of 6.9 Multiplication-Sign 10{sup -3} cm{sup 2}/V s at V{sub ds} = 1 V, and electron concentration of 2.8 Multiplication-Sign 10{sup 17} cm{sup -3}. Moreover, the on-off ratio of the TiO{sub 2} nanotube-based field effect transistors is as high as 10{sup 3}. Humidity sensing test shows the sensitive response of the individual TiO{sub 2} nanotubes to water vapor.

Liang, Fengxia [Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong Special Administrative Region (Hong Kong)] [Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong Special Administrative Region (Hong Kong); Luo, Lin-Bao [School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, Anhui (China)] [School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, Anhui (China); Tsang, Chun-Kwan; Zheng, Lingxia; Cheng, Hua [Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong Special Administrative Region (Hong Kong)] [Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong Special Administrative Region (Hong Kong); Li, Yang Yang, E-mail: yangli@cityu.edu.hk [Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong Special Administrative Region (Hong Kong)

2012-01-15T23:59:59.000Z

357

Infrared Imaging of the Nanometer-Thick Accumulation Layer in Organic Field-Effect Transistors  

E-Print Network [OSTI]

We report on infrared (IR) spectro-microscopy of the electronic excitations in nanometer-thick accumulation layers in FET devices based on poly(3-hexylthiophene). IR data allows us to explore the charge injection landscape and uncovers the critical role of the gate insulator in defining relevant length scales. This work demonstrates the unique potential of IR spectroscopy for the investigation of physical phenomena at the nanoscale occurring at the semiconductor-insulator interface in FET devices.

Z. Q. Li; G. M. Wang; N. Sai; D. Moses; M. C. Martin; M. Di Ventra; A. J. Heeger; D. N. Basov

2006-02-09T23:59:59.000Z

358

VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy |  

Broader source: Energy.gov (indexed) [DOE]

VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy March 5, 2012 - 1:24pm Addthis Secretary Chu sits down with Microsoft Founder and Chairman Bill Gates at the 2012 ARPA-E Energy Innovation Summit. April Saylor April Saylor Former Digital Outreach Strategist, Office of Public Affairs Last week, attendees at the 2012 ARPA-E Energy Innovation Summit heard from a variety of leaders from across the research, business and government sectors who spoke at the conference of nearly 2,400. These speakers, along with the startup companies and innovators in attendance, converged outside of Washington, D.C., to offer their take on how America can tackle our energy challenges. One of the top-level highlights from the Summit included this fireside chat

359

Thermosensitive gating effect and selective gas adsorption in a porous coordination nanocage  

SciTech Connect (OSTI)

A porous coordination nanocage functionalized with 24 triisopropylsilyl groups exhibits a remarkable thermosensitive gate opening phenomenon and demonstrates a molecular sieving effect at a certain temperature range, which can be used for gas separation purposes.

Zhao, Dan; Yuan, Daqiang; Krishna, Rajamani; van Baten, Jasper M.; Zhou, Hong-Cai (TAM); (U. Amsterdam)

2010-10-22T23:59:59.000Z

360

Thermosensitive gating effect and selective gas adsorption in a porous coordination nanocage  

SciTech Connect (OSTI)

A porous coordination nanocage functionalized with 24 triisopropylsilyl groups exhibits a remarkable thermosensitive gate opening phenomenon and demonstrates a molecular sieving effect at a certain temperature range, which can be used for gas separation purposes.

Zhao, Dan; Yuan, Daqiang; Krishna, Rajamani; van Baten, Jasper M; Zhou, Hong-Cai

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Vehicle Technologies Office Merit Review 2014: GATE: Energy Efficient Vehicles for Sustainable Mobility  

Broader source: Energy.gov [DOE]

Presentation given by Ohio State University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE: energy efficient...

362

Vehicle Technologies Office Merit Review 2014: DOE GATE Center of Excellence in Sustainable Vehicle Systems  

Broader source: Energy.gov [DOE]

Presentation given by Clemson University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about DOE GATE Center of...

363

A linear programming solution to the gate assignment problem at airport terminals  

E-Print Network [OSTI]

This research solves the flight-to-gate assignment problem at airports in such a way as to minimize, or at least reduce, walking distances for passengers inside terminals. Two solution methods are suggested. The first is ...

Mangoubi, Rami

1980-01-01T23:59:59.000Z

364

E-Print Network 3.0 - arbitrary phase gates Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

<< < 1 2 3 4 5 > >> Page: << < 1 2 3 4 5 > >> 41 Optical simulation of quantum logic N. J. Cerf,1 Summary: of universal quantum gates using simple optical components beam...

365

Simple template-based method to produce bradbury-nielsen gates  

Science Journals Connector (OSTI)

A Bradbury-Nielsen gate (BNG) consists of two interleaved...m with minimal use of a microscope. The small wire spacing allows modulation rates at tens of megahertz. Using this method, we have fabricated four BNG...

Oh Kyu Yoon; Ignacio A. Zuleta

2007-11-01T23:59:59.000Z

366

Process fidelity estimation of linear optical quantum CZ gate: A comparative study  

E-Print Network [OSTI]

We present a systematic comparison of different methods of fidelity estimation of a linear optical quantum controlled-Z gate implemented by two-photon interference on a partially polarizing beam splitter. We have utilized a linear fidelity estimator based on the Monte Carlo sampling technique as well as a non-linear estimator based on maximum likelihood reconstruction of a full quantum process matrix. In addition, we have also evaluated lower bound on quantum gate fidelity determined by average quantum state fidelities for two mutually unbiased bases. In order to probe various regimes of operation of the gate we have introduced a tunable delay line between the two photons. This allowed us to move from high-fidelity operation to a regime where the photons become distinguishable and the success probability of the scheme significantly depends on input state. We discuss in detail possible systematic effects that could influence the gate fidelity estimation.

M. Micuda; M. Sedlak; I. Straka; M. Mikova; M. Dusek; M. Jezek; J. Fiurasek

2014-03-19T23:59:59.000Z

367

Ligand-Gated Chloride Channels Are Receptors for Biogenic Amines in C. elegans  

E-Print Network [OSTI]

Biogenic amines such as serotonin and dopamine are intercellular signaling molecules that function widely as neurotransmitters and neuromodulators. We have identified in the nematode Caenorhabditis elegans three ligand-gated ...

Ringstad, Niels

368

Synthesis of reversible functions using various gate libraries and design specifications  

Science Journals Connector (OSTI)

This dissertation is devoted to efficient automated logic synthesis of reversible circuits using various gate types and initial specifications. These Reversible circuits are of interest to several modern technologies, including Nanotechnology, ...

Nouraddin Alhagi / Marek Perkowski

2010-01-01T23:59:59.000Z

369

Gate-diffusion input (GDI): a power-efficient method for digital combinatorial circuits  

Science Journals Connector (OSTI)

Gate diffusion input (GDI) - a new technique of low-power digital combinatorial circuit design - is described. This technique allows reducing power consumption, propagation delay, and area of digital circuits while maintaining low complexity of logic ...

A. Morgenshtein; A. Fish; I. A. Wagner

2002-10-01T23:59:59.000Z

370

Positions in the glun2c-containing nmdar regulate alcohol sensitivity and ion channel gating.  

E-Print Network [OSTI]

?? The N-methyl-D-aspartate (NMDA) receptor, a subtype of glutamate-gated ion channel, has been shown to be a major target of ethanol in the central nervous (more)

Wu, Man

2014-01-01T23:59:59.000Z

371

Comparison of the Catalytic Oxidation Reaction on Graphene Oxide and Reduced Graphene Oxide  

E-Print Network [OSTI]

Comparison of the Catalytic Oxidation Reaction on Graphene Oxide and Reduced Graphene Oxide Laboratory (PAL), Pohang 790-784, Republic of Korea ABSTRACT: The capacities of graphene oxide (GO) and reduced graphene oxide (rGO) films grown on silicon substrate to cause the aniline to azobenzene oxidation

Kim, Sehun

372

AN AUTOZEROING FLOATING-GATE BANDPASS FILTER Paul Hasler, Bradley A. Minch, and Chris Diorio  

E-Print Network [OSTI]

is the thermal Figure 1: An autozeroing oating-gate ampli er AFGA that uses pFET hot-electron injection a bandpass oating-gate ampli er that uses tunneling and pFET hot-electron injection to set its DC operating the current through the pFET. Steady state occurs when the injection current is equal to the tunneling current

Diorio, Chris

373

Yield estimates and comparisons for full custom, standard cell, and gate array design methodologies  

E-Print Network [OSTI]

YIELD ESTIMATES AND COMPARISONS FOR FULL CUSTOM, STANDARD CELL, AND GATE ARRAY DESIGN METHODOLOGIES A Thesis by MARCELLA EVELYN NORTE Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment... of the requirements for the degree of MASTER OF SCIENCE December 1990 Major Subject: Electrical Engineering YIELD ESTIMATES AND COMPARISONS FOR FULL CUSTOM, STANDARD CELL, AND GATE ARRAY DESIGN METHODOLOGIES A Thesis by MARCELLA EVELYN NORTE Approved...

Norte, Marcella Evelyn

2012-06-07T23:59:59.000Z

374

Silicon field-effect transistor based on quantum tunneling J. FL Tucker, Chinlee Wang, and P. Scott Carney  

E-Print Network [OSTI]

configuration, the gate could be offset in order to permit a shallow implant of the finished device to convert a commercial package, SEMICAD,' together with our own cal- culation of tunneling and thermionic emission

Bhargava, Rohit

375

Fully Printed Separated Carbon Nanotube Thin Film Transistor Circuits and Its Application in Organic Light Emitting Diode Control  

Science Journals Connector (OSTI)

The advantages of printed electronics and semiconducting single-walled carbon nanotubes (SWCNTs) are combined for the first time for display electronics. Conductive silver ink and 98% semiconductive SWCNT solutions are used to print back-gated thin film ...

Pochiang Chen; Yue Fu; Radnoosh Aminirad; Chuan Wang; Jialu Zhang; Kang Wang; Kosmas Galatsis; Chongwu Zhou

2011-11-03T23:59:59.000Z

376

Logic gates at the surface code threshold: Superconducting qubits poised for fault-tolerant quantum computing  

E-Print Network [OSTI]

A quantum computer can solve hard problems - such as prime factoring, database searching, and quantum simulation - at the cost of needing to protect fragile quantum states from error. Quantum error correction provides this protection, by distributing a logical state among many physical qubits via quantum entanglement. Superconductivity is an appealing platform, as it allows for constructing large quantum circuits, and is compatible with microfabrication. For superconducting qubits the surface code is a natural choice for error correction, as it uses only nearest-neighbour coupling and rapidly-cycled entangling gates. The gate fidelity requirements are modest: The per-step fidelity threshold is only about 99%. Here, we demonstrate a universal set of logic gates in a superconducting multi-qubit processor, achieving an average single-qubit gate fidelity of 99.92% and a two-qubit gate fidelity up to 99.4%. This places Josephson quantum computing at the fault-tolerant threshold for surface code error correction. Our quantum processor is a first step towards the surface code, using five qubits arranged in a linear array with nearest-neighbour coupling. As a further demonstration, we construct a five-qubit Greenberger-Horne-Zeilinger (GHZ) state using the complete circuit and full set of gates. The results demonstrate that Josephson quantum computing is a high-fidelity technology, with a clear path to scaling up to large-scale, fault-tolerant quantum circuits.

R. Barends; J. Kelly; A. Megrant; A. Veitia; D. Sank; E. Jeffrey; T. C. White; J. Mutus; A. G. Fowler; B. Campbell; Y. Chen; Z. Chen; B. Chiaro; A. Dunsworth; C. Neill; P. O`Malley; P. Roushan; A. Vainsencher; J. Wenner; A. N. Korotkov; A. N. Cleland; John M. Martinis

2014-02-19T23:59:59.000Z

377

Correlation of gross tumor volume excursion with potential benefits of respiratory gating  

SciTech Connect (OSTI)

Purpose: To test the hypothesis that the magnitude of thoracic tumor motion can be used to determine the desirability of respiratory gating. Methods and materials: Twenty patients to be treated for lung tumors had computed tomography image data sets acquired under assisted breath hold at normal inspiration (100% tidal volume), at full expiration (0% tidal volume), and under free breathing. A radiation oncologist outlined gross tumor volumes (GTVs) on the breath-hold computed tomographic images. These data sets were registered to the free-breathing image data set. Two sets of treatment plans were generated: one based on an internal target volume explicitly formed from assessment of the excursion of the clinical target volume (CTV) through the respiratory cycle, representing an ungated treatment, and the other based on the 0% tidal volume CTV, representing a gated treatment with little margin for residual motion. Dose-volume statistics were correlated to the magnitude of the motion of the center of the GTV during respiration. Results: Patients whose GTVs were >100 cm{sup 3} showed little decrease in lung dose under gating. The other patients showed a correlation between the excursion of the center of the GTV and a reduction in potential lung toxicity. As residual motion increased, the benefits of respiratory gating increased. Conclusion: Gating seems to be advantageous for patients whose GTVs are <100 cm{sup 3} and for whom the center of the GTV exhibits significant motion, provided residual motion under gating is kept small.

Starkschall, George [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States)]. E-mail: gstarksc@mdanderson.org; Forster, Kenneth M. [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Kitamura, Kei [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Department of Radiology, Hokkaido University, Graduate School of Medicine, Sapporo (Japan); Cardenas, Alex [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Tucker, Susan L. [Department of Biomathematics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Stevens, Craig W. [Department of Radiation Oncology, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States)

2004-11-15T23:59:59.000Z

378

Magic State Distillation and Gate Compilation in Quantum Algorithms for Quantum Chemistry  

E-Print Network [OSTI]

Quantum algorithms for quantum chemistry map the dynamics of electrons in a molecule to the dynamics of a coupled spin system. To reach chemical accuracy for interesting molecules, a large number of quantum gates must be applied which implies the need for quantum error correction and fault-tolerant quantum computation. Arbitrary fault-tolerant operations can be constructed from a small, universal set of fault-tolerant operations by gate compilation. Quantum chemistry algorithms are compiled by decomposing the dynamics of the coupled spin-system using a Trotter formula, synthesizing the decomposed dynamics using Clifford operations and single-qubit rotations, and finally approximating the single-qubit rotations by a sequence of fault-tolerant single-qubit gates. Certain fault-tolerant gates rely on the preparation of specific single-qubit states referred to as magic states. As a result, gate compilation and magic state distillation are critical for solving quantum chemistry problems on a quantum computer. We review recent progress that has improved the efficiency of gate compilation and magic state distillation by orders of magnitude.

Colin J. Trout; Kenneth R. Brown

2015-01-07T23:59:59.000Z

379

Oxidation Resistant Graphite Studies  

SciTech Connect (OSTI)

The Very High Temperature Reactor (VHTR) Graphite Research and Development Program is investigating doped nuclear graphite grades exhibiting oxidation resistance. During a oxygen ingress accident the oxidation rates of the high temperature graphite core region would be extremely high resulting in significant structural damage to the core. Reducing the oxidation rate of the graphite core material would reduce the structural effects and keep the core integrity intact during any air-ingress accident. Oxidation testing of graphite doped with oxidation resistant material is being conducted to determine the extent of oxidation rate reduction. Nuclear grade graphite doped with varying levels of Boron-Carbide (B4C) was oxidized in air at nominal 740C at 10/90% (air/He) and 100% air. The oxidation rates of the boronated and unboronated graphite grade were compared. With increasing boron-carbide content (up to 6 vol%) the oxidation rate was observed to have a 20 fold reduction from unboronated graphite. Visual inspection and uniformity of oxidation across the surface of the specimens were conducted. Future work to determine the remaining mechanical strength as well as graphite grades with SiC doped material are discussed.

W. Windes; R. Smith

2014-07-01T23:59:59.000Z

380

Acoustic sounding of the tropical marine boundary layer during GATE  

Science Journals Connector (OSTI)

A vertically pointed monostatic acoustic sounder was installed on the NOAA ShipOCEANOGRAPHER during the Global Atmospheric Research Program Atlantic Tropical Experiment (GATE). The sounderantenna was mounted on a gyrocontrolled platform to compensate for the ship'spitch and roll motions. Extensive measures such as mounting the antenna assembly on a vibration isolator and installing absorbing cuffs had to be taken to reduce interference by ship?generated noise. Back?scattered acoustic data obtained from up to 850 m height describe the tropical marine boundary layer in unique and hitherto unseen detail. During undisturbed weather conditions the facsimile record showed convective plumes rising from the surface of the water up to 400 m. Storm?generated disturbances resulted in a substantial modification of the boundary layer; low?level multilayered undulating inversions formed from cool outflow currents. The inversions persisted for up to 16 hours. Low?level patchy cumulus clouds produced characteristic hummock?shaped acoustic echoes. Analysis of the Doppler frequency shift of the returns allowed the determination of vertical velocities within these clouds and underlying convective plumes.

P. A. Mandics; J. E. Gaynor; F. F. Hall Jr.

1976-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

InGaAs/InP heterojunction bipolar transistors for ultra-low power circuit applications  

SciTech Connect (OSTI)

For many modern day portable electronic applications, low power high speed devices have become very desirable. Very high values of f{sub T} and f{sub MAX} have been reported with InGaAs/InP heterojunction bipolar transistors (HBTs), but only under high bias and high current level operating conditions. An InGaAs/InP ultra-lowpower HBT with f{sub MAX} greater than 10 GHz operating at less than 20 {micro}A has been reported for the first time in this work. The results are obtained on a 2.5 x 5 {micro}m{sup 2} device, corresponding to less than 150 A/cm{sup 2} of current density. These are the lowest current levels at which f{sub MAX} {ge} 10 GHz has been reported.

Chang, P.C.; Baca, A.G.; Hafich, M.J.; Ashby, C.I.

1998-08-01T23:59:59.000Z

382

Atomic layer deposition of Hf{sub x}Al{sub y}C{sub z} as a work function material in metal gate MOS devices  

SciTech Connect (OSTI)

As advanced silicon semiconductor devices are transitioning from planar to 3D structures, new materials and processes are needed to control the device characteristics. Atomic layer deposition (ALD) of Hf{sub x}Al{sub y}C{sub z} films using hafnium chloride and trimethylaluminum precursors was combined with postdeposition anneals and ALD liners to control the device characteristics in high-k metal-gate devices. Combinatorial process methods and technologies were employed for rapid electrical and materials characterization of various materials stacks. The effective work function in metaloxidesemiconductor capacitor devices with the Hf{sub x}Al{sub y}C{sub z} layer coupled with an ALD HfO{sub 2} dielectric was quantified to be mid-gap at ?4.6?eV. Thus, Hf{sub x}Al{sub y}C{sub z} is a promising metal gate work function material that allows for the tuning of device threshold voltages (V{sub th}) for anticipated multi-V{sub th} integrated circuit devices.

Lee, Albert, E-mail: alee@intermolecular.com; Fuchigami, Nobi; Pisharoty, Divya; Hong, Zhendong; Haywood, Ed; Joshi, Amol; Mujumdar, Salil; Bodke, Ashish; Karlsson, Olov [Intermolecular, 3011 North First Street, San Jose, California 95134 (United States); Kim, Hoon; Choi, Kisik [GLOBALFOUNDRIES Technology Research Group, 257 Fuller Road, Albany, New York 12309 (United States); Besser, Paul [GLOBALFOUNDRIES, 1050 East Arques, Sunnyvale, California 94085 (United States)

2014-01-15T23:59:59.000Z

383

positions): transistor,  

E-Print Network [OSTI]

, Hubble) . Anthropology ­ 1 (The Leakeys) . Economy ­ 1 (Keynes) . Environment ­ 1 (Rachel Carson & Astronomy ­ 3 (Einstein, Fermi, Hubble) . Anthropology ­ 1 (The Leakeys) . Economy ­ 1 (Keynes). Downside: Relatively slow. Later refinements improved its e#­ ciency but the logical purity has been lost

Artemov, Sergei N.

384

METAL OXIDE NANOPARTICLES  

SciTech Connect (OSTI)

This chapter covers the fundamental science, synthesis, characterization, physicochemical properties and applications of oxide nanomaterials. Explains fundamental aspects that determine the growth and behavior of these systems, briefly examines synthetic procedures using bottom-up and top-down fabrication technologies, discusses the sophisticated experimental techniques and state of the art theory results used to characterize the physico-chemical properties of oxide solids and describe the current knowledge concerning key oxide materials with important technological applications.

FERNANDEZ-GARCIA,M.; RODGRIGUEZ, J.A.

2007-10-01T23:59:59.000Z

385

Single-Phase Self-Oscillating Jets for Enhanced Heat Transfer: Preprint  

SciTech Connect (OSTI)

Self-oscillating jets have potential to cool insulated gate bipolar transistors in vehicle power electronics modules.

Narumanchi, S.; Kelly, K.; Mihalic, M.; Gopalan, S.; Hester, R.; Vlahinos, A.

2008-06-01T23:59:59.000Z

386

Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain  

SciTech Connect (OSTI)

Interface properties of La-silicate gate dielectrics on Si substrates with W or nano-sized grain W{sub 2}C gate electrodes have been investigated. A low interface state density of 2.5??10{sup 11}?cm{sup ?2}/eV has been achieved with W{sub 2}C gate electrodes, which is one third of those with W gate electrode. An interface roughness of 0.33?nm with spatial frequency comparable to the grain size of W gate electrode has been observed. Besides, an atomically flat interface of 0.12?nm has been obtained with W{sub 2}C gate electrode. The origin of flat interface may be attributed to the elimination of inhomogeneous stress by grains in metal electrode.

Tuokedaerhan, K.; Natori, K.; Iwai, H. [Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Kakushima, K., E-mail: kakushima@ep.titech.ac.jp; Kataoka, Y.; Nishiyama, A.; Sugii, N.; Wakabayashi, H.; Tsutsui, K. [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan)

2014-01-13T23:59:59.000Z

387

Full-Swing Gate Diffusion Input logic-Case-study of low-power CLA adder design  

Science Journals Connector (OSTI)

Full Swing Gate Diffusion Input (FS-GDI) methodology is presented. The proposed methodology is applied to a 40nm Carry Look Ahead Adder (CLA). The CLA is implemented mainly using GDI full-swing F1 and F2 gates, which are the counterparts of standard ... Keywords: Alternative logic family, Carry Look Ahead (CLA) adder, Full-Swing GDI, Gate Difusion Input (GDI), Low power

Arkadiy Morgenshtein; Viacheslav Yuzhaninov; Alexey Kovshilovsky; Alexander Fish

2014-01-01T23:59:59.000Z

388

The fabrication and characteristics of a Vertical V-grove Field-Effect Transistor  

E-Print Network [OSTI]

SOURCE + n DRAIN X n + n GATE Figure 7. Ideal JFET showing model parameters. P 12 Applying this condition to (2) it can be seen that qN a 2 W 0 2C where W is the pinch off potential for the JFET. The dotted line 0 in Figure 8 represents..., can then be obtained from the definition dI g dV (11) Taking the derivative of (10) with respect to the drain voltage, the conductance in the linear region is 2s(y -v ) , s = ~, L' ? (~~) I. qN a (12) The transconductance, g , is defined...

Simpson, Dale Alan

1980-01-01T23:59:59.000Z

389

Stabilized chromium oxide film  

DOE Patents [OSTI]

Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

Garwin, Edward L. (Los Altos, CA); Nyaiesh, Ali R. (Palo Alto, CA)

1988-01-01T23:59:59.000Z

390

Stabilized chromium oxide film  

DOE Patents [OSTI]

Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150A are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

Nyaiesh, A.R.; Garwin, E.L.

1986-08-04T23:59:59.000Z

391

Ethylene Oxide Explosions  

Science Journals Connector (OSTI)

... THE occasional occurrence of ethylene oxide explosions during the fumigation of dried fruit has led us to undertake a detailed ... yielded results somewhat like those for acetaldehyde1,2.. Cool flames can be initiated in ethylene oxide air mixtures in the neighbourhood of 330 C. at atmospheric pressure. ...

J. H. BURGOYNE; F. A. BURDEN

1948-07-31T23:59:59.000Z

392

Oxidative Degradation of Monoethanolamine  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Oxidative Degradation of Monoethanolamine Oxidative Degradation of Monoethanolamine Susan Chi Gary T. Rochelle* (gtr@che.utexas.edu, 512-471-7230) The University of Texas at Austin Department of Chemical Engineering Austin, Texas 78712 Prepared for presentation at the First National Conference on Carbon Sequestration, Washington, DC, May 14-17, 2001 Abstract Oxidative degradation of monoethanolamine (MEA) was studied under typical absorber condition of 55°C. The rate of evolution of NH 3 , which was indicative of the overall rate of degradation, was measured continuously in a batch system sparged with air. Dissolved iron from 0.0001 mM to 1 mM yields oxidation rates from 0.37 to 2 mM/hr in MEA solutions loaded with 0.4 mole CO 2 / mole MEA. Ethylenediaminetetraacetic acid (EDTA) and N,N-bis(2- hydroxyethyl)glycine effectively decrease the rate of oxidation in the presence of iron by 40 to

393

Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization  

Science Journals Connector (OSTI)

We report a novel way of introducing strain in Ultra-Thin Body and Buried-Oxide (UTBB) SOI structures by Ge+ implant into the underlying Si substrate and the formation of localized SiGe regions underneath the buried oxide (BOX) by Crystallization. The localized SiGe regions result in local deformation of the ultra-thin Si. Compressive strain of up to ?0.55% and ?1.2% were detected by Nano-Beam Diffraction (NBD) at the center and the edge, respectively, of a 50nm wide ultra-thin Si region located between two local SiGe regions. The under-the-BOX SiGe regions may be useful for strain engineering of ultra-thin body transistors formed on UTBB-SOI substrates.

Yinjie Ding; Ran Cheng; Qian Zhou; Anyan Du; Nicolas Daval; Bich-Yen Nguyen; Yee-Chia Yeo

2013-01-01T23:59:59.000Z

394

Dissociation of human thalamic and cortical SEP gating as revealed by intrathalamic recordings under muscle relaxation  

Science Journals Connector (OSTI)

Gating refers to a reduction of cortical somatosensory evoked potentials (SEP) under multiple simultaneous afferent inputs. This study used the opportunity for intrathalamic recordings in patients with movement disorders to clarify to what extent cortical SEP gating is preceded by thalamic gating. Recordings were performed in 10 patients, narcotised by intravenous propofol when receiving implantation of a therapeutic deep brain stimulator system. SEP were elicited by an 8.1-Hz median nerve stimulation at twice motor threshold and were recorded simultaneously from both intrathalamic and scalp electrodes before and after the application of the depolarising muscle blocker succinylcholine which eliminated both the background muscular tone and the repetitive muscle twitches caused by the median nerve stimulation. Peripheral compound action potentials recorded at the upper arm remained unchanged after complete muscle relaxation, proving a continuously effective nerve stimulation. In contrast, the primary cortical SEP component (N20) was significantly increased under succinylcholine (+17%). This cortical release from gating was not paralleled, however, by an increased thalamic response; rather, the primary thalamic response (P16) showed a slight (?9%) but highly significant amplitude reduction. As the recordings were performed in narcotised patients, any potentially variable attentional bias on part of the subjects can be excluded as confounding factor when comparing the two experimental conditions with vs. without reafferent somatosensory inflow. Thus, given the high signal-to-noise ratio of intrathalamically recorded SEP, the present study shows a distinct thalamocortical dissociation with the primary somatosensory cortex representing the predominant level exhibiting SEP gating.

Fabian Klostermann; Ren Gobbele; Helmut Buchner; Gabriel Curio

2002-01-01T23:59:59.000Z

395

Water gate array for current flow or tidal movement pneumatic harnessing system  

DOE Patents [OSTI]

The invention, which provides a system for harnessing power from current flow or tidal movement in a body of water, comprises first and second hydro-pneumatic chambers each having ingress and egress below the water surface near the river or ocean floor and water gates operative to open or seal the ports to the passage of water. In an exemplary embodiment, the gates are sychronized by shafts so that the ingress ports of each chamber are connected to the egress ports of each other chamber. Thus, one set of gates is closed, while the other is open, thereby allowing water to flow into one chamber and build air pressure therein and allowing water to flow out of the other chamber and create a partial vacuum therein. A pipe connects the chambers, and an air turbine harnesses the air movement within the pipe. When water levels are equilibrated, the open set of gates is closed by a counterweight, and the other set is allowed to open by natural force of the water differential. The water gates may be comprised of a plurality of louvers which are ganged for simultaneous opening and closing. The system is designed to operate with air turbines or other pneumatic devices. Its design minimizes construction cost and environmental impact, yet provides a clean renewable energy source.

Gorlov, Alexander M. (Brookline, MA)

1991-01-01T23:59:59.000Z

396

Phase-Transfer-Catalyzed Oxidations  

Science Journals Connector (OSTI)

Phase-transfer catalysis (PTC) offers many excellent opportunities for conducting oxidation reactions using inexpensive primary oxidants such as oxygen, sodium hypochlorite, hydrogen peroxide, electrooxidation...

Charles M. Starks; Charles L. Liotta; Marc E. Halpern

1994-01-01T23:59:59.000Z

397

Regenerative catalytic oxidation  

SciTech Connect (OSTI)

Currently Regenerative Thermal Oxidizers (R.T.O.`s) are an accepted technology for the control of volatile organic compounds (VOC`s) and hazardous air pollutants (HAP`s). This control technology, when introduced, offered substantial reductions in operating costs, especially auxiliary fuel requirements when compared to existing control technologies such as recuperative thermal and recuperative catalytic oxidizers. While these savings still exist, there is a demand for control of new and/or hybrid technologies, one of which is Regenerative Catalytic Oxidizers (R.C.O.`s). This paper will explore the development of regenerative catalytic oxidation from the theoretical stage through pilot testing through a commercial installation. The operating cost of R.C.O.`s will be compared to R.T.O.`s to verify the savings that are achievable through the use of regenerative catalytic oxidation. In the development of this technology, which is a combination of two (2) existing technologies, R.T.O.`s and catalysis, a second hybrid technology was explored and pilot tested. This is a combination R.C.O. for VOC and HAP control and simultaneous SCR (Selective Catalytic Reduction) for NOx (Oxides of Nitrogen) control. Based on the pilot and full scale testing, both regenerative catalytic oxidizers and systems which combine R.C.O. with SCR for both VOC and NOx reduction are economically viable and are in fact commercially available. 6 figs., 2 tabs.

Gribbon, S.T. [Engelhard Process Emission Systems, South Lyon, MI (United States)

1996-12-31T23:59:59.000Z

398

Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and  

Broader source: Energy.gov (indexed) [DOE]

Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders February 28, 2012 - 7:02am Addthis Washington D.C. - This week, the Advanced Research Projects Agency - Energy (ARPA-E) is hosting its third annual Energy Innovation Summit, which is designed to unite key players from all sectors of America's energy innovation community to share ideas for how to lead the world in the development of next generation clean energy technologies, develop our nation's energy resources, and build an American economy that lasts. Tomorrow's full agenda with speakers is below. For specific press requests, please contact Keri Fulton at keri.fulton@hq.doe.gov.

399

Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and  

Broader source: Energy.gov (indexed) [DOE]

Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders February 28, 2012 - 7:02am Addthis Washington D.C. - This week, the Advanced Research Projects Agency - Energy (ARPA-E) is hosting its third annual Energy Innovation Summit, which is designed to unite key players from all sectors of America's energy innovation community to share ideas for how to lead the world in the development of next generation clean energy technologies, develop our nation's energy resources, and build an American economy that lasts. Tomorrow's full agenda with speakers is below. For specific press requests, please contact Keri Fulton at keri.fulton@hq.doe.gov.

400

ARPA-E Announces 2012 Energy Innovation Summit Featuring Bill Gates, Fred  

Broader source: Energy.gov (indexed) [DOE]

Announces 2012 Energy Innovation Summit Featuring Bill Announces 2012 Energy Innovation Summit Featuring Bill Gates, Fred Smith and Lee Scott ARPA-E Announces 2012 Energy Innovation Summit Featuring Bill Gates, Fred Smith and Lee Scott September 9, 2011 - 9:25am Addthis New York, NY - The U.S. Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) Director, Arun Majumdar, announced yesterday that the Agency will hold its third annual ARPA-E Energy Innovation Summit from February 27 - 29, 2012 at the Gaylord Convention Center just outside Washington, D.C. Bill Gates, founder and chairman of Microsoft; Fred Smith, chairman, president and CEO of FedEx; and Lee Scott, former CEO of Wal-Mart; will join Secretary Chu and Director Majumdar as distinguished keynote speakers. "After two successful Summits, I'm excited to once again bring some of

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

A hot oxidant, 3-NO[subscript 2]Y[subscript 122] radical, unmasks conformational gating in reductase  

E-Print Network [OSTI]

Escherichia coli ribonucleotide reductase is an ?2?2 complex that catalyzes the conversion of nucleotides to deoxynucleotides and requires a diferric-tyrosyl radical (Y[superscript ]) cofactor to initiate catalysis. The ...

Yokoyama, Kenichi

402

SOLID OXIDE PLANAR AND TUBULAR SOLID OXIDE FUEL  

E-Print Network [OSTI]

SOLID OXIDE PLANAR AND TUBULAR SOLID OXIDE FUEL CELLS Dynamic Simulation Approach Modular Approach · Parallel planes: PSOFC · Other: combustor, reformer Solid Oxide Fuel Cell Electrochemistry Cell Reactions · Slow pressure transients #12;Fuel Cell Assumptions · H2 electrochemically oxidized only · CO consumed

Mease, Kenneth D.

403

Engineering a C-Phase quantum gate: optical design and experimental realization  

E-Print Network [OSTI]

A two qubit quantum gate, namely the C-Phase, has been realized by exploiting the longitudinal momentum (i.e. the optical path) degree of freedom of a single photon. The experimental setup used to engineer this quantum gate represents an advanced version of the high stability closed-loop interferometric setup adopted to generate and characterize 2-photon 4-qubit Phased Dicke states. Some experimental results, dealing with the characterization of multipartite entanglement of the Phased Dicke states are also discussed in detail.

Andrea Chiuri; Chiara Greganti; Paolo Mataloni

2012-04-12T23:59:59.000Z

404

Resilience of gated avalanche photodiodes against bright illumination attacks in quantum cryptography  

E-Print Network [OSTI]

Semiconductor avalanche photodiodes (APDs) are commonly used for single photon detection in quantum key distribution. Recently, many attacks using bright illumination have been proposed to manipulate gated InGaAs APDs. In order to devise effective counter-measures, careful analysis of these attacks must be carried out to distinguish between incorrect operation and genuine loopholes. Here, we show that correctly-operated, gated APDs are immune to continuous-wave illumination attacks, while monitoring the photocurrent for anomalously high values is a straightforward counter-measure against attacks using temporally tailored light.

Z. L. Yuan; J. F. Dynes; A. J. Shields

2011-06-14T23:59:59.000Z

405

A proposal for the implementation of quantum gates with photonic-crystal coupled cavity waveguides  

E-Print Network [OSTI]

Quantum computers require technologies that offer both sufficient control over coherent quantum phenomena and minimal spurious interactions with the environment. We show, that photons confined to photonic crystals, and in particular to highly efficient waveguides formed from linear chains of defects doped with atoms can generate strong non-linear interactions which allow to implement both single and two qubit quantum gates. The simplicity of the gate switching mechanism, the experimental feasibility of fabricating two dimensional photonic crystal structures and integrability of this device with optoelectronics offers new interesting possibilities for optical quantum information processing networks.

Dimitris G. Angelakis; Marcelo Franca Santos; Vassilis Yannopapas; Artur Ekert

2007-04-12T23:59:59.000Z

406

A procedure for localizing faults to specific gates using power supply transient signals is described. The method  

E-Print Network [OSTI]

of gates along sensitized paths from the composite transient signals measured at the power ports or C4s by a defect-free chip or simulation to identify the position of a defect. The transients produced at the C4sAbstract A procedure for localizing faults to specific gates using power supply transient signals

Plusquellic, James

407

Activation of the Inositol (1,4,5)-Triphosphate Calcium Gate Receptor Is Required for HIV-1 Gag Release  

Science Journals Connector (OSTI)

...27 Jagannath, A., and M. J. A. Wood. 2009. Localization of double-stranded...inositol (1,4,5)-triphosphate calcium gate receptor is required for HIV-1 Gag release...5)-triphosphate receptor (IP3R) gates intracellular Ca(2+) stores. Following...

Lorna S. Ehrlich; Gisselle N. Medina; Mahfuz B. Khan; Michael D. Powell; Katsuhiko Mikoshiba; Carol A. Carter

2010-04-28T23:59:59.000Z

408

Dominant-Negative Synthesis Suppression of Voltage-Gated Calcium Channel Cav2.2 Induced by Truncated Constructs  

E-Print Network [OSTI]

Dominant-Negative Synthesis Suppression of Voltage-Gated Calcium Channel Cav2.2 Induced, United Kingdom Voltage-gated calcium channel 1 subunits consist of four domains (I­IV), each with six by the cytoplasmic I-II loop of Cav2.2. It requires transmembrane seg- ments, because the isolated Cav2.2 N terminus

Dolphin, Annette C.

409

Crystal Structure of the Mammalian GIRK2 KplusChannel and Gating Regulation by G Proteins PIP2 and Sodium  

SciTech Connect (OSTI)

G protein-gated K{sup +} channels (Kir3.1--Kir3.4) control electrical excitability in many different cells. Among their functions relevant to human physiology and disease, they regulate the heart rate and govern a wide range of neuronal activities. Here, we present the first crystal structures of a G protein-gated K{sup +} channel. By comparing the wild-type structure to that of a constitutively active mutant, we identify a global conformational change through which G proteins could open a G loop gate in the cytoplasmic domain. The structures of both channels in the absence and presence of PIP{sub 2} suggest that G proteins open only the G loop gate in the absence of PIP{sub 2}, but in the presence of PIP{sub 2} the G loop gate and a second inner helix gate become coupled, so that both gates open. We also identify a strategically located Na{sup +} ion-binding site, which would allow intracellular Na{sup +} to modulate GIRK channel activity. These data provide a structural basis for understanding multiligand regulation of GIRK channel gating.

M Whorton; R MacKinnon

2011-12-31T23:59:59.000Z

410

ECG-GATED C-ARM COMPUTED TOMOGRAPHY USING L1 REGULARIZATION Cyril Mory 1,3  

E-Print Network [OSTI]

ECG-GATED C-ARM COMPUTED TOMOGRAPHY USING L1 REGULARIZATION Cyril Mory 1,3 , Bo Zhang 3 , Vincent of the algorithm used for the minimization. Index Terms -- C-Arm, computed tomography, ECG- gating, augmented arises from the synchronization with the patient's electrocardiogram (ECG), which is necessary to avoid

Paris-Sud XI, Université de

411

Syngas Oxidation Mechanism  

Science Journals Connector (OSTI)

A comprehensive analysis of synthesis gas (syngas) oxidation kinetics in wide ranges of temperature ... on the basis of the reaction mechanism of syngas ignition and combustion in air. A vast set of experimental ...

A. M. Starik; N. S. Titova; A. S. Sharipov

2010-09-01T23:59:59.000Z

412

Controlled CO preferential oxidation  

DOE Patents [OSTI]

Method is described for controlling the supply of air to a PROX (PReferential OXidation for CO cleanup) reactor for the preferential oxidation in the presence of hydrogen wherein the concentration of the hydrogen entering and exiting the PROX reactor is monitored, the difference there between correlated to the amount of air needed to minimize such difference, and based thereon the air supply to the PROX reactor adjusted to provide such amount and minimize such difference. 2 figs.

Meltser, M.A.; Hoch, M.M.

1997-06-10T23:59:59.000Z

413

Transport in carbon nanotube field-effect transistors tuned using low energy electron beam This article has been downloaded from IOPscience. Please scroll down to see the full text article.  

E-Print Network [OSTI]

Transport in carbon nanotube field-effect transistors tuned using low energy electron beam exposure nanotube field-effect transistors tuned using low energy electron beam exposure Jack Chan1 , Brian Burke1/334212 Abstract We have studied the effect of low energy (30 keV) electron beam exposure on carbon nanotube field

Harriott, Lloyd R.

414

Site-Directed Amino Acid Substitutions in the Hydroxylase ? Subunit of Butane Monooxygenase from Pseudomonas butanovora: Implications for Substrates Knocking at the Gate  

Science Journals Connector (OSTI)

...intricacies of the leucine gate influence catalysis at...opening the leucine gate and shifting the geometry...where green is carbon, red is oxygen, blue is nitrogen...is through the leucine gate toward the diiron center...H. Shim, and T. K. Wood. 2002. Directed evolution...

Kimberly H. Halsey; Luis A. Sayavedra-Soto; Peter J. Bottomley; Daniel J. Arp

2006-07-01T23:59:59.000Z

415

Modeling of Diesel Oxidation Catalyst  

Science Journals Connector (OSTI)

Modeling of Diesel Oxidation Catalyst ... Optimization of hydrocarbon (HC) oxidation over a diesel oxidation catalyst (DOC) requires consideration of (i) HC gas diffusion into the catalyst layer, (ii) HC gas adsorption and desorption from catalyst sites, and (iii) kinetics of the oxidation reaction. ... Mutagenicity of Diesel Engine Exhaust Is Eliminated in the Gas Phase by an Oxidation Catalyst but Only Slightly Reduced in the Particle Phase ...

Yasushi Tanaka; Takashi Hihara; Makoto Nagata; Naoto Azuma; Akifumi Ueno

2005-09-30T23:59:59.000Z

416

Performance of honeywell RICMOS-IV SOI transistors after irradiation to 27 Mrad(si) by 63.3 MeV protons  

Science Journals Connector (OSTI)

We present results of an exposure of Honeywell RICMOS-IV SOI transistors produced in a developmental run to 2 1014 63.3 MeV protons at the UCD cyclotron radiation test beam (27 Mrad (Si)). In terms of surface damage, this corresponds to almost twice the dose expected for the CMS pixel detector during its useful life at the LHC collider. The irradiated transistors include n-channel \\{MOSFETs\\} similar to the front-end transistors of a pixel readout suitable for use at hadron colliders. Data are presented for \\{MOSFETs\\} on radiation-induced changes in thresholds, transconductance, maximum voltage gain and noise. Circuit simulations using the measured noise data indicate that the pixel readout would continue to function satisfactorily in the CMS radiation environment.

D.E. Pellett; S.T. Liu

1999-01-01T23:59:59.000Z

417

Guardians at the Gates of Hell Estimating the Risk of Nuclear Theft and Terrorism  

E-Print Network [OSTI]

that pose the highest-priority risks of nuclear theft, and to evaluate policy approaches to strengtheningGuardians at the Gates of Hell Estimating the Risk of Nuclear Theft and Terrorism ­ and Identifying the Highest-Priority Risks of Nuclear Theft by Matthew Bunn SB and SM, Political Science, MIT, 1985 SUBMITTED

de Weck, Olivier L.

418

7-Gate Kinetic AMPA Model Kinetics to match EPSCs from calyx of Held  

E-Print Network [OSTI]

7-Gate Kinetic AMPA Model · Kinetics to match EPSCs from calyx of Held · Multiple closed, open and EPSC amplitude Bruce Graham Department of Computing Science and Mathematics, University of Stirling, U, including the calyx of Held in the mammalian auditory system. Such depression may be mediated

Graham, Bruce

419

The Thinnest Molecular Separation Sheet by Graphene Gates of Single-Walled Carbon Nanohorns  

Science Journals Connector (OSTI)

Graduate School of Science, Chiba University, 1-33 Yayoi, Inage, Chiba, Chiba 263-8522, Japan ... transport properties; surface science; separation science; molecular modeling; green chemistry; molecular gates; picostructures ... The author would like to thank Dr. M. Yudasaka from the Nanotube Research Center, Advanced Industrial Science and Technology, Japan and Prof. S. Iijima from Meijo University, Japan for supplying the NHs. ...

Tomonori Ohba

2014-10-27T23:59:59.000Z

420

International Agriculture Fellowship: A Gates Foundation Grand Challenges Exploration in Endophytic Biological Control  

E-Print Network [OSTI]

International Agriculture Fellowship: A Gates Foundation Grand Challenges Exploration in Endophytic Biological Control Who we are: The International Center for Tropical Agriculture (CIAT) is a member institute of the Consultative Group on International Agricultural Research (CIAR). Based in Cali, Colombia, we focus

Ferrara, Katherine W.

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Circadian gating of the psbAIII high light response in Synechococcus sp. strain PCC 7942  

E-Print Network [OSTI]

(1-5 fold) during the peaks of the cycle. We also found that in a clock null strain the lack of an oscillator does not entirely negate the light response of PpsbAIII::luxAB; however, this response does not demonstrate gating. In contrast...

Shelton, Jeffrey Lyn

2000-01-01T23:59:59.000Z

422

Performance of a 512 x 512 Gated CMOS Imager with a 250 ps Exposure Time  

SciTech Connect (OSTI)

We describe the performance of a 512x512 gated CMOS read out integrated circuit (ROIC) with a 250 ps exposure time. A low-skew, H-tree trigger distribution system is used to locally generate individual pixel gates in each 8x8 neighborhood of the ROIC. The temporal width of the gate is voltage controlled and user selectable via a precision potentiometer. The gating implementation was first validated in optical tests of a 64x64 pixel prototype ROIC developed as a proof-of-concept during the early phases of the development program. The layout of the H-Tree addresses each quadrant of the ROIC independently and admits operation of the ROIC in two modes. If common mode triggering is used, the camera provides a single 512x512 image. If independent triggers are used, the camera can provide up to four 256x256 images with a frame separation set by the trigger intervals. The ROIC design includes small (sub-pixel) optical photodiode structures to allow test and characterization of the ROIC using optical sources prior to bump bonding. Reported test results were obtained using short pulse, second harmonic Ti:Sapphire laser systems operating at ?~ 400 nm at sub-ps pulse widths.

Teruya, A T; Moody, J D; Hsing, W W; Brown, C G; Griffin, M; Mead, A S

2012-10-01T23:59:59.000Z

423

Elephant Beer and Shinto Gates: Managing Similar Concepts in a Multilingual Database  

E-Print Network [OSTI]

Elephant Beer and Shinto Gates: Managing Similar Concepts in a Multilingual Database Martin" and "tembo" are completely interchangeable when talking about elephants, but bring you different brands as "rouge" in French or "nyekundu" in Swahili. An "elephant" is an elephant, whether it is "éléphant

424

Unique Functional Properties of a Sensory Neuronal P2X ATP-Gated Channel from Zebrafish  

E-Print Network [OSTI]

of native P2X receptor channels evokes a fast inward current carried by mono- valent and calcium ions in a broad range of calcium- dependent signaling events from the neurogenic control of smooth muscle, and a cysteine-rich extracellular loop resembles that of recently discovered proton-gated channels (Wald- mann

Séguéla, Philippe

425

Ligand Gated Ion Channel Functionality Assays Robert P. Hayes, Kumud Raj Poudel and James A. Brozik  

E-Print Network [OSTI]

was to devise a method suitable to test the functionality of the entire family of cysteine-loop ligand gated ion substrate was infused with calcium ions that were trapped by the POPC bilayer. Once the assembly was formed. Electrochemical measurements were taken using a calcium ion sensitive electrode. The assemblies were interrogated

Collins, Gary S.

426

Economic Congestion Relief Across Multiple Regions Requires Tradable Physical Flow-gate Rights  

E-Print Network [OSTI]

PWP-076 Economic Congestion Relief Across Multiple Regions Requires Tradable Physical Flow.ucei.berkeley.edu/ucei #12;Economic Congestion Relief Across Multiple Regions Requires Tradable Physical Flow-gate Rights- mission use. The North American Electric Reliability Council NERC is in the process of implementing

California at Berkeley. University of

427

Effects of Magnesium on Inactivation of the Voltage-gated Calcium Current in  

E-Print Network [OSTI]

Effects of Magnesium on Inactivation of the Voltage-gated Calcium Current in Cardiac Myocytes H-dependent inactivation can be modulated by changes in cytoplasmic Mg~+. INTRODUCTION Magnesium is an important constituent of the intracellular milieu. Despite the importance of magnesium as an essential cofactor

428

Photothermal Response in Dual-Gated Bilayer Graphene M.-H. Kim,1  

E-Print Network [OSTI]

Photothermal Response in Dual-Gated Bilayer Graphene M.-H. Kim,1 J. Yan,1,2 R. J. Suess,3 T. E photoresponse in gapped bilayer graphene was investigated by optical and transport measurements. A pulse There is growing recognition that graphene has excep- tional potential as a new optoelectronic material, which has

Murphy, Thomas E.

429

Current transport, gate dielectrics and band gap engineering in graphene devices  

E-Print Network [OSTI]

Current transport, gate dielectrics and band gap engineering in graphene devices Wenjuan Zhu In this work, we studied current transport in mono-, bi- and tri-layer graphene. We find that both of the electrical field of the substrate surface polar phonons in bi-layer/tri-layer graphenes. We also find

Perebeinos, Vasili

430

Channel gating forces govern accuracy of mechano-electrical transduction in hair cells  

Science Journals Connector (OSTI)

...imposed on the measurements by the series resistance of the patch. Hair-bundle displacement was measured...The most important parameter is the elementary gating force, Z, defined as...Support, Non-U.S. Gov't | Animals Electric Stimulation Electrophysiology Hair Cells...

Sietse M. van Netten; Theo Dinklo; Walter Marcotti; Corn J. Kros

2003-01-01T23:59:59.000Z

431

The use of gated radionuclide angiography in the diagnosis of cardiac contusion  

SciTech Connect (OSTI)

No currently used diagnostic test is an accurate predictor of patients who will develop morbidity or mortality from cardiac contusion. In a prospective study we used gated cardiac radionuclide angiography to assess cardiac function in 30 patients with blunt chest trauma, and we compared the results of this test with those of other diagnostic studies for cardiac contusion to determine whether gated angiography is a more accurate predictor of serious cardiac injury. Diagnostic tests included the following: serial electrocardiograms (ECG), serial creatine phosphokinase muscle-brain isoenzyme (CPK-MB) and lactic dehydrogenase (LDH) isoenzymes, gated cardiac radionuclide angiography, and technetium-99m (Tc-99m) pyrophosphate scintigraphy. Abnormal studies were present in 26 patients; 22 showed abnormalities in CPK-MB, 19 on ECG, and five on gated scan. No patient demonstrated an abnormal Tc-99m pyrophosphate scan or abnormal elevation of LDH isoenzyme. Although no diagnostic test was predictive of morbidity and mortality, CPK-MB isoenzyme was the only test to correlate with morbidity and mortality. Morbidity and mortality correlated most closely with the number of associated major injuries and the presence of hypotension or hypoxia.

Fenner, J.E.; Knopp, R.; Lee, B.; dos Santos, P.A.; Wessel, R.J.; Dang, C.V.; Parks, S.N.

1984-09-01T23:59:59.000Z

432

Direct-current substrate bias effects on amorphous silicon sputter-deposited films for thin film transistor fabrication  

SciTech Connect (OSTI)

The effect that direct current (dc) substrate bias has on radio frequency-sputter-deposited amorphous silicon (a-Si) films has been investigated. The substrate bias produces a denser a-Si film with fewer defects compared to unbiased films. The reduced number of defects results in a higher resistivity because defect-mediated conduction paths are reduced. Thin film transistors (TFTs) that were completely sputter deposited were fabricated and characterized. The TFT with the biased a-Si film showed lower leakage (off-state) current, higher on/off current ratio, and higher transconductance (field effect mobility) than the TFT with the unbiased a-Si film.

Jun, Seung-Ik; Rack, Philip D.; McKnight, Timothy E.; Melechko, Anatoli V.; Simpson, Michael L. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996-2200 (United States); Molecular Scale Engineering and Nanoscale Technologies Research Group, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

2005-09-26T23:59:59.000Z

433

Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment  

SciTech Connect (OSTI)

This study examined the effect of oxygen plasma treatment on light-enhanced bias instability in Zn-Sn-O (ZTO) thin film transistors (TFTs). The treated ZTO TFT exhibited only a threshold voltage (V{sub th}) shift of -2.05 V under negative bias illumination stress (NBIS) conditions, whereas the pristine device suffered from a negative V{sub th} shift of 3.76 V under identical conditions. X-ray photoelectron spectroscopic analysis revealed that the oxygen vacancy defect density was diminished via the oxygen plasma treatment. This suggests the V{sub th} degradation under NBIS is due to photo-transition of oxygen vacancy defects.

Yang, Shinhyuk [Oxide Electronics Research Team, Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Department of Information Display, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Hwan Ji, Kwang; Kyeong Jeong, Jae [Department of Materials Science and Engineering, Inha University, Incheon 402-751 (Korea, Republic of); Ki Kim, Un; Seong Hwang, Cheol [Department of Materials Science and Engineering, WCU Hybrid Materials Program, and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Ko Park, Sang-Hee; Hwang, Chi-Sun [Oxide Electronics Research Team, Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Jang, Jin [Department of Information Display, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

2011-09-05T23:59:59.000Z

434

Improving chemical vapor deposition graphene conductivity using molybdenum trioxide: An in-situ field effect transistor study  

SciTech Connect (OSTI)

By using in situ field effect transistor characterization integrated with molecular beam epitaxy technique, we demonstrate the strong surface transfer p-type doping effect of single layer chemical vapor deposition (CVD) graphene, through the surface functionalization of molybdenum trioxide (MoO{sub 3}) layer. After doping, both the hole and electron mobility of CVD graphene are nearly retained, resulting in significant enhancement of graphene conductivity. With coating of 10 nm MoO{sub 3}, the conductivity of CVD graphene can be increased by about 7 times, showing promising application for graphene based electronics and transparent, conducting, and flexible electrodes.

Han, Cheng [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China) [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China); Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Lin, Jiadan; Xiang, Du [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)] [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Wang, Chaocheng; Wang, Li [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China)] [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China); Chen, Wei [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore) [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 and Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)

2013-12-23T23:59:59.000Z

435

H{sup -} beam extraction from a cesium seeded field effect transistor based radio frequency negative hydrogen ion source  

SciTech Connect (OSTI)

H{sup -} beam was successfully extracted from a cesium seeded ion source operated using a field effect transistor inverter power supply as a radio frequency (RF) wave source. High density hydrogen plasma more than 10{sup 19} m{sup -3} was obtained using an external type antenna with RF frequency of lower than 0.5 MHz. The source was isolated by an isolation transformer and H{sup -} ion beam was extracted from a single aperture. Acceleration current and extraction current increased with the increase of extraction voltage. Addition of a small amount of cesium vapor into the source enhanced the currents.

Ando, A.; Matsuno, T.; Funaoi, T.; Tanaka, N. [School of Engineering, Tohoku University, Sendai 980-8579 (Japan); Tsumori, K.; Takeiri, Y. [National Institute for Fusion Science, Toki 509-5292 (Japan)

2012-02-15T23:59:59.000Z

436

Design and Simulation of Novel Enhancement Mode 520 kV GaN Vertical Superjunction High Electron Mobility Transistors for Smart Grid Applications  

Science Journals Connector (OSTI)

We report on the design, simulations and optimization of a novel enhancement mode 520 kV GaN vertical superjunction (SJ) high electron mobility transistor (HEMT). We optimize the space charge in GaN pillars using GaN SJ pn diode for the best trade-off between breakdown voltage (BV) and specific on-resistance (Ronsp), by varying the pillar dosage, length and width. The resulting GaN SJ field effect transistor (FET) structure is projected to have, for example, Ronsp of 4.2 m? cm2 with BV of 12.4 kV.

Zhongda Li; T. Paul Chow

2013-01-01T23:59:59.000Z

437

Oxidative Tritium Decontamination System  

SciTech Connect (OSTI)

The Princeton Plasma Physics Laboratory, Tritium Systems Group has developed and fabricated an Oxidative Tritium Decontamination System (OTDS), which is designed to reduce tritium surface contamination on various components and items. The system is configured to introduce gaseous ozone into a reaction chamber containing tritiated items that require a reduction in tritium surface contamination. Tritium surface contamination (on components and items in the reaction chamber) is removed by chemically reacting elemental tritium to tritium oxide via oxidation, while purging the reaction chamber effluent to a gas holding tank or negative pressure HVAC system. Implementing specific concentrations of ozone along with catalytic parameters, the system is able to significantly reduce surface tritium contamination on an assortment of expendable and non-expendable items. This paper will present the results of various experimentation involving employment of this system.

Charles A. Gentile; John J. Parker; Gregory L. Guttadora; Lloyd P. Ciebiera

2002-02-11T23:59:59.000Z

438

Methanol partial oxidation reformer  

DOE Patents [OSTI]

A partial oxidation reformer comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell.

Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Krumpelt, Michael (Naperville, IL)

1999-01-01T23:59:59.000Z

439

Methanol partial oxidation reformer  

DOE Patents [OSTI]

A partial oxidation reformer comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell.

Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Krumpelt, Michael (Naperville, IL)

2001-01-01T23:59:59.000Z

440

Methanol partial oxidation reformer  

DOE Patents [OSTI]

A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

Ahmed, S.; Kumar, R.; Krumpelt, M.

1999-08-17T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Methanol partial oxidation reformer  

DOE Patents [OSTI]

A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

Ahmed, S.; Kumar, R.; Krumpelt, M.

1999-08-24T23:59:59.000Z

442

Highly accurate SPICE-compatible modeling for single- and double-gate GNRFETs with studies on technology scaling  

Science Journals Connector (OSTI)

In this paper, we present a highly accurate closed-form compact model for Schottky-Barrier-type Graphene Nano-Ribbon Field-Effect Transistors (SB-GNRFETs). This is a physics-based analytical model for the current--voltage (I--V) characteristics of SB-GNRFETs. ...

Morteza Gholipour; Ying-Yu Chen; Amit Sangai; Deming Chen

2014-03-01T23:59:59.000Z

443

Tetraalklylammonium polyoxoanionic oxidation catalysts  

DOE Patents [OSTI]

Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H{sub e{minus}z}[(n-C{sub 4}H{sub 9}){sub 4}N]{sub z}(XM{sub 11}M{prime}O{sub 39}){sup {minus}e}. The M{prime} (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

Ellis, P.E.; Lyons, J.E.; Myers, H.K. Jr.; Shaikh, S.N.

1998-10-06T23:59:59.000Z

444

Tetraalykylammonium polyoxoanionic oxidation catalysts  

DOE Patents [OSTI]

Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H.sub.e-z (n-C.sub.4 H.sub.9).sub.4 N!.sub.z (XM.sub.11 M'O.sub.39).sup.-e The M' (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

Ellis, Paul E. (Downingtown, PA); Lyons, James E. (Wallingford, PA); Myers, Jr., Harry K. (Cochranville, PA); Shaikh, Shahid N. (Media, PA)

1998-01-01T23:59:59.000Z

445

A Porphyrin-Stabilized Iridium Oxide Water Oxidation Catalyst  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Porphyrin-Stabilized Iridium Oxide Water Oxidation Catalyst Authors: Sherman, B. D., Pillai, S., Kodis, G., Bergkamp, J., Mallouk, T. E., Gust, D., Moore, T. A., and Moore, A. L....

446

Robust quantum gates and a bus architecture for quantum computing with rare-earth-ion doped crystals  

E-Print Network [OSTI]

We present a composite pulse controlled phase gate which together with a bus architecture improves the feasibility of a recent quantum computing proposal based on rare-earth-ion doped crystals. Our proposed gate operation is tolerant to variations between ions of coupling strengths, pulse lengths, and frequency shifts, and it achieves worst case fidelities above 0.999 with relative variations in coupling strength as high as 10% and frequency shifts up to several percent of the resonant Rabi frequency of the laser used to implement the gate. We outline an experiment to demonstrate the creation and detection of maximally entangled states in the system.

Janus Wesenberg; Klaus Moelmer

2003-01-09T23:59:59.000Z

447

Charakterisierung und Prparation von GaN und Herstellung von In-Plane-Gate Transistoren in AlxGa1-xN/GaN Heterostrukturen.  

E-Print Network [OSTI]

??Gegenstand der Arbeit sind GaN-Volumenmaterial und AlxGa1-xN/GaN HEMTs (high electron mobility transistor), welche ein zweidimensionales Elektronengas (2DEG) besitzen. Die Materialien wurden durch elektrische Messungen, insbesondere (more)

Ebbers, Andr

2003-01-01T23:59:59.000Z

448

Oxidative Reforming of Biodiesel Over Molybdenum (IV) Oxide  

E-Print Network [OSTI]

as potential feedstock in solid oxide fuel cells. Petroleum based fuels become scarcer daily, and biodiesel for use in solid oxide fuel cells. This cutting edge area of research continues to be important as energy prove useful for solid oxide fuel cells. METHODS Commercial molybdenum dioxide was used for all tests

Collins, Gary S.

449

8/1/14 Google Maps https://www.google.com/maps/dir/Golden+Gate+Bridge,+San+Francisco,+CA+94129/UCSF%2FMission+Bay,+San+Francisco,+CA/@37.7996107,-122.4363906,... 1/2  

E-Print Network [OSTI]

8/1/14 Google Maps https://www.google.com/maps/dir/Golden+Gate+Bridge,+San+Francisco,+CA+94129/UCSF has tolls. Directions from Golden Gate Bridge to UCSF/Mission Bay San Francisco, CA 94129 Golden Gate;8/1/14 Google Maps https://www.google.com/maps/dir/Golden+Gate+Bridge,+San+Francisco,+CA+94129/UCSF%2FMission

Derisi, Joseph

450

Highly oxidized superconductors  

DOE Patents [OSTI]

Novel superconducting materials in the form of compounds, structures or phases are formed by performing otherwise known synthesis in a highly oxidizing atmosphere rather than that created by molecular oxygen at atmospheric pressure or below. This leads to the successful synthesis of novel superconducting compounds which are thermodynamically stable at the conditions under which they are formed. 16 figs.

Morris, D.E.

1994-09-20T23:59:59.000Z

451

Experimental synchronization of chaos in a large ring of mutually coupled single-transistor oscillators: Phase, amplitude, and clustering effects  

Science Journals Connector (OSTI)

In this paper experimental evidence of multiple synchronization phenomena in a large (n?=?30) ring of chaotic oscillators is presented. Each node consists of an elementary circuit generating spikes of irregular amplitude and comprising one bipolar junction transistor one capacitor two inductors and one biasing resistor. The nodes are mutually coupled to their neighbours via additional variable resistors. As coupling resistance is decreased phase synchronization followed by complete synchronization is observed and onset of synchronization is associated with partial synchronization i.e. emergence of communities (clusters). While component tolerances affect community structure the general synchronization properties are maintained across three prototypes and in numerical simulations. The clusters are destroyed by adding long distance connections with distant notes but are otherwise relatively stable with respect to structural connectivity changes. The study provides evidence that several fundamental synchronization phenomena can be reliably observed in a network of elementary single-transistor oscillators demonstrating their generative potential and opening way to potential applications of this undemanding setup in experimental modelling of the relationship between network structure synchronization and dynamical properties.

2014-01-01T23:59:59.000Z

452

Staged membrane oxidation reactor system  

DOE Patents [OSTI]

Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

2012-09-11T23:59:59.000Z

453

Staged membrane oxidation reactor system  

DOE Patents [OSTI]

Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

2014-05-20T23:59:59.000Z

454

Staged membrane oxidation reactor system  

DOE Patents [OSTI]

Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

2013-04-16T23:59:59.000Z

455

> REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 1 Abstract--This paper presents Single Electron Transistor  

E-Print Network [OSTI]

low energy circuits. By discussing the energy-delay trade- offs for SET devices and comparing them Efficient, Single Electron Transistor, Energy-Delay Trade-Off I. INTRODUCTION TTAINING low energy operation option to implement low energy consumption circuits with low- to-moderate performance requirements

Yener, Aylin

456

The Fabrication of an Inverter using Rubrene Single Crystal Organic Transistors C. Corbet, Y. Matsuoka, K. Watanabe, P.I. Yoshihiro Iwasa  

E-Print Network [OSTI]

The Fabrication of an Inverter using Rubrene Single Crystal Organic Transistors C. Corbet, Y single crystal devices. The purpose of this project is to fabricate an inverter device using organic by a physical vapor transport method with a nitrogen flow. Inverter devices were fabricated by laminating thus

Mellor-Crummey, John

457

Technology Review: Angle Speeds Plastic Transistor http://www.technologyreview.com/articles/rnb_041304.asp 1 of 2 4/14/2004 8:24 PM  

E-Print Network [OSTI]

mobility in organic transistors. The researchers' method could lead to mass production techniques appeared in the March 12, 2004 issue of Science. Single-Molecule Logic Proposed Red Wine Mends Solar Cells. Though they are flexible and potentially very inexpensive, organic electronic devices perform relatively

Rogers, John A.

458

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network [OSTI]

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

459

Ultrafast Graphene Oxide Humidity Sensors  

Science Journals Connector (OSTI)

Ultrafast Graphene Oxide Humidity Sensors ... Graphene oxide can be exploited in humidity and temperature sensors with a number of convenient features such as flexibility, transparency and suitability for large-scale manufacturing. ... Here we show that the two-dimensional nature of graphene oxide and its superpermeability to water combine to enable humidity sensors with unprecedented response speed (?30 ms response and recovery times). ...

Stefano Borini; Richard White; Di Wei; Michael Astley; Samiul Haque; Elisabetta Spigone; Nadine Harris; Jani Kivioja; Tapani Ryhnen

2013-11-09T23:59:59.000Z

460

Doped palladium containing oxidation catalysts  

DOE Patents [OSTI]

A supported oxidation catalyst includes a support having a metal oxide or metal salt, and mixed metal particles thereon. The mixed metal particles include first particles including a palladium compound, and second particles including a precious metal group (PMG) metal or PMG metal compound, wherein the PMG metal is not palladium. The oxidation catalyst may also be used as a gas sensor.

Mohajeri, Nahid

2014-02-18T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Hybrid Photonic Hyper-Controlled-Not Gate with the Dipole Induced Transparency in Weak-Coupling Regime  

E-Print Network [OSTI]

We present a hybrid hyper-controlled-not (hyper-CNOT) gate for hyperparallel photonic quantum computing based on both the polarization and spatial-mode degrees of freedom (DOFs) of a two-photon system, which is identical to two CNOT gates operating at the same time on four photons in one DOF. This proposal is implemented with the optical reflection-transmission property of a diamond nitrogen-vacancy center embedded in a photonic crystal cavity coupled to two waveguides, which is suitable for the robust and flexible quantum information processing based on both the spatial-mode and polarization DOFs of photon systems in Purcell regime. With the hybrid hyper-CNOT gate, more quantum logic gate operations can be accomplished with less resources in a definite period of time, and the influence from photonic dissipation and environment noise can be suppressed.

Bao-Cang Ren; Fu-Guo Deng

2014-11-02T23:59:59.000Z

462

E-Print Network 3.0 - atp-gated p2x4 ion Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ion Search Powered by Explorit Topic List Advanced Search Sample search results for: atp-gated p2x4 ion Page: << < 1 2 3 4 5 > >> 1 introduction browse basic search advanced...

463

Vehicle Technologies Office Merit Review 2014: GATE Center for Electric Drive Transportation at the University of Michigan- Dearborn  

Broader source: Energy.gov [DOE]

Presentation given by Regents University of Michigan at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center...

464

Abstract----Recently, a novel multi-bit nonvolatile memory based on double gate (DG) MOSFET is  

E-Print Network [OSTI]

and the negative control gate voltages applied for read operation. We used Silvaco Atlas, a 2- D numerical. The quantitative analysis were conducted by Silvaco Atlas, a 2-D numerical device simulator [4]. We read

Lee, Jong Duk

465

Positions in the GluN2C-Containing NMDAR Regulate Alcohol Sensitivity and Ion Channel Gating.  

E-Print Network [OSTI]

??The N-methyl-D-aspartate (NMDA) receptor, a subtype of glutamate-gated ion channel, has been shown to be a major target of ethanol in the central nervous system (more)

Wu, Man

2014-01-01T23:59:59.000Z

466

ESS 2012 Peer Review - Notrees Wind Storage - Jeff Gates, Duke Energy  

Broader source: Energy.gov (indexed) [DOE]

Notrees Energy Storage Project Notrees Energy Storage Project Jeff Gates Duke Energy jeff.gates@duke-energy.com Project Objectives * Use energy storage to increase the value and practical application of wind generation * Integrate storage with intermittent renewable energy production * Improve use of power-producing assets by storing energy during non-peak generation periods * Demonstrate benefits of using fast response energy storage to provide ancillary services for grid management * Verify that energy storage solutions can operate within the ERCOT market protocols * Demonstrate ramp control and Energy Storage System * Technology: Advanced lead-acid battery * OEM Partner - Xtreme Power (XP) * 36 MW / 24 MWh output * Modules housed in ~ 6,000 sq. ft. building Project Activities to Date * Site construction began December

467

Effects of spectral entanglement in polarization-entanglement swapping and type-I fusion gates  

Science Journals Connector (OSTI)

We examine how spectral entanglement in polarization-entangled photon states generated from bulk-crystal, spontaneous parametric down-conversion affects the success of entanglement swapping and type-I fusion gates. We quantify the success of the entanglement swapping and fusion gates by calculating the bipartite concurrence and residual tangle, respectively, in terms of the joint spectral probability amplitudes of the initial broad-bandwidth polarization-entangled states. We find that both polarization-entanglement measures depend strongly on the initial spectral entanglement, as well as on the configuration of the independent sources. Specifically, when spectral differences correlate with polarization, the optimal source configuration is different for the two protocols. We conclude that this distinction is founded in how the underlying Bell-state measurement and quantum-erasure techniques respond differently to distinguishing spectral information.

Travis S. Humble and Warren P. Grice

2008-02-11T23:59:59.000Z

468

Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes  

E-Print Network [OSTI]

We present a practical and easy-to-implement method for high-speed near infrared single-photon detection based on InGaAs/InP single-photon avalanche photodiodes (SPADs), combining aspects of both sine gating and self-differencing techniques. At a gating frequency of 921 MHz and temperature of -30 $^{\\circ}$C we achieve: a detection efficiency of 9.3 %, a dark count probability of 2.8$\\times10^{-6}$ ns$^{-1}$, while the afterpulse probability is 1.6$\\times10^{-4}$ ns$^{-1}$, with a 10 ns "count-off time" setting. In principle, the maximum count rate of the SPAD can approach 100 MHz, which can significantly improve the performance for diverse applications.

Jun Zhang; Rob Thew; Claudio Barreiro; Hugo Zbinden

2009-08-16T23:59:59.000Z

469

2012 ARPA-E Energy Innovation Summit: Fireside Chat with Steven Chu and Bill Gates  

ScienceCinema (OSTI)

The third annual ARPA-E Energy Innovation Summit was held in Washington D.C. in February, 2012. The event brought together key players from across the energy ecosystem - researchers, entrepreneurs, investors, corporate executives, and government officials - to share ideas for developing and deploying the next generation of energy technologies. This video captures a session called 'Fireside Chat' that featured Steven Chu, the Secretary of Energy, and Bill Gates, Chairman of Microsoft Corporation. The session is moderated by John Podesta, Chair of the Center for American Progress. Energy Secretary Steven Chu and Microsoft Founder and Chairman Bill Gates exchanged ideas about how small businesses and innovators can overcome the challenges that face many startups.

Chu, Steven (U.S. Department of Energy Secretary); Gates, Bill (Microsoft, Chairman); Podesta, John (Center for American Progress, Chair and Counselor)

2012-03-21T23:59:59.000Z

470

Gated x-ray framing camera image of a direct-drive cylindrical implosion  

SciTech Connect (OSTI)

Gated X-ray images of laser-driven implosions can provide movies of typically 16 frames with {approximately} 80 ps time resolution and 10 {micro}m spatial resolution. Cylindrical implosions allow study of convergent hydrodynamics but with excellent diagnostic access down the axis of the cylinder. This example from a recent cylindrical implosion campaign on the OMEGA laser provides quantitative data on the growth of ablative Rayleigh-Taylor instabilities in convergent geometry.

Voss, S.A.; Barnes, C.W.; Oertel, J.A.; Watt, R.G. [Los Alamos National Lab., NM (United States)] [Los Alamos National Lab., NM (United States); Boehly, T.R.; Bradley, D.K.; Knauer, J.P.; Pien, G. [Univ. of Rochester, NY (United States). Lab. for Laser Energetics] [Univ. of Rochester, NY (United States). Lab. for Laser Energetics

1999-02-01T23:59:59.000Z

471

Highly enhanced avalanche probability using sinusoidally-gated silicon avalanche photodiode  

SciTech Connect (OSTI)

We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520?nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.

Suzuki, Shingo; Namekata, Naoto, E-mail: nnao@phys.cst.nihon-u.ac.jp; Inoue, Shuichiro [Institute of Quantum Science, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Tsujino, Kenji [Tokyo Women's Medical University, 8-1 Kawada-cho, Shinjuku-ku, Tokyo 162-8666 (Japan)

2014-01-27T23:59:59.000Z

472

Modeling the current behavior of the digital BiCMOS gate  

E-Print Network [OSTI]

CMOS gate showing the pull-up and pull-down sections 6 Schematics of the pull-up section Pull-up equivalent circuit model . Equivalent circuit model 10 Simplified equivalent circuit model Equivalent circuit model neglecting ATF Collector current... with ATF effect vs without ATF effect 14 Modified circuit model 16 10 Comparison of this work versus SPICE simulation Typical collector current response 17 12 13 Equivalent circuit for 0 ? t0 Equivalent circuit after t0 21 14 Base current...

Tang, Zhilong

1995-01-01T23:59:59.000Z

473

Graphene and Graphene Oxide: Biofunctionalization and Applications...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and Graphene Oxide: Biofunctionalization and Applications in Biotechnology. Graphene and Graphene Oxide: Biofunctionalization and Applications in Biotechnology. Abstract: Graphene...

474

Optimum performance investigation of LYSO crystal pixels: A comparison between GATE simulation and experimental data  

E-Print Network [OSTI]

Monte Carlo simulation plays an important role in the study of time of flight (TOF) positron emission tomography (PET) prototype. As it can incorporate accurate physical modeling of scintillation detection process, from scintillation light generation, the transport of scintillation photos through the crystal(s), to the conversion of these photons into electronic signals. The Geant4 based simulation software GATE can provide a user-friendly simulation platform containing the properties needed. In this work, we developed a dedicated module in GATE simulation tool. Using this module, we simulated the light yield, energy resolution, time resolution of LYSO pixels with the same cross-section ($4\\times4 mm^{2}$) of different lengths: 5 mm, 10 mm, 15 mm, 20 mm, 25 mm, coupled to a PMT. The experiments were performed to validate the GATE simulation results. The results indicate that the best time resolution (484.0$\\pm$67.5 ps) and energy resolution (13.3$\\pm$0.4 %) could be produced by using pixel with length of 5 mm...

Chen, Ze; Chen, Jin-Da; Zhang, Xiu-Ling; Sun, Zhi-Yu; Huang, Wen-Xue; Wang, Jian-Song; Guo, Zhong-Yan; Xiao, Guo-Qing

2013-01-01T23:59:59.000Z

475

Optimum performance investigation of LYSO crystal pixels: A comparison between GATE simulation and experimental data  

E-Print Network [OSTI]

Monte Carlo simulation plays an important role in the study of time of flight (TOF) positron emission tomography (PET) prototype. As it can incorporate accurate physical modeling of scintillation detection process, from scintillation light generation, the transport of scintillation photos through the crystal(s), to the conversion of these photons into electronic signals. The Geant4 based simulation software GATE can provide a user-friendly simulation platform containing the properties needed. In this work, we developed a dedicated module in GATE simulation tool. Using this module, we simulated the light yield, energy resolution, time resolution of LYSO pixels with the same cross-section ($4\\times4 mm^{2}$) of different lengths: 5 mm, 10 mm, 15 mm, 20 mm, 25 mm, coupled to a PMT. The experiments were performed to validate the GATE simulation results. The results indicate that the best time resolution (484.0$\\pm$67.5 ps) and energy resolution (13.3$\\pm$0.4 %) could be produced by using pixel with length of 5 mm. The module can also be applied to other cases for precisely simulating optical photons propagating in scintillators.

Ze Chen; Zheng-Guo Hu; Jin-Da Chen; Xiu-Ling Zhang; Zhi-Yu Sun; Wen-Xue Huang; Jian-Song Wang; Zhong-Yan Guo; Guo-Qing Xiao

2013-09-15T23:59:59.000Z

476

A large Bradbury Nielsen ion gate with flexible wire spacing based on photo-etched stainless steel grids  

E-Print Network [OSTI]

Bradbury Nielsen gates are well known devices used to switch ion beams and are typically applied in mass or mobility spectrometers for separating beam constituents by their different flight or drift times. A Bradbury Nielsen gate consists of two interleaved sets of electrodes. If opposite polarity of the same amplitude is applied the gate is closed, and for identical (zero) potential the gate is open. Whereas former realizations of the device employ actual wires resulting in difficulties with winding, fixing and tensioning them, our approach is to use two grids photo-etched onto a metallic foil. This design allows for simplified construction of gates covering large beam sizes up to at least 900\\,mm$^2$ with variable wire spacing down to 250\\,\\textmu m. By changing the grids the wire spacing can be varied without major changes. A gate of this design was installed and systematically tested at TRIUMF's ion trap facility, TITAN, for use with radioactive beams to separate isobaric contamination of charge states.

Brunner, T; O'Sullivan, K; Simon, M C; Kossick, M; Ettenauer, S; Gallant, A T; Man, E; Bishop, D; Good, M; Gratta, G; Dilling, J

2011-01-01T23:59:59.000Z

477

Design and optimisation of quantum logic circuits for a three-qubit Deutsch-Jozsa algorithm implemented with optically-controlled, solid-state quantum logic gates  

E-Print Network [OSTI]

We analyse the design and optimisation of quantum logic circuits suitable for the experimental demonstration of a three-qubit quantum computation prototype based on optically-controlled, solid-state quantum logic gates. In these gates, the interaction between two qubits carried by the electron-spin of donors is mediated by the optical excitation of a control particle placed in their proximity. First, we use a geometrical approach for analysing the entangling characteristics of these quantum gates. Then, using a genetic programming algorithm, we develop circuits for the refined Deutsch-Jozsa algorithm investigating different strategies for obtaining short total computational times. We test two separate approaches based on using different sets of entangling gates with the shortest possible gate computation time which, however, does not introduce leakage of quantum information to the control particles. The first set exploits fast approximations of controlled-phase gates as entangling gates, while the other one arbitrary entangling gates with a shorter gate computation time compared to the first set. We have identified circuits with consistently shorter total computation times when using controlled-phase gates.

A. Del Duce; S. Savory; P. Bayvel

2009-10-09T23:59:59.000Z

478

Respiration Induced Heart Motion and Indications of Gated Delivery for Left-Sided Breast Irradiation  

SciTech Connect (OSTI)

Purpose: To investigate respiration-induced heart motion for left-sided breast irradiation using a four-dimensional computed tomography (4DCT) technique and to determine novel indications to assess heart motion and identify breast patients who may benefit from a gated treatment. Methods and Materials: Images of 4DCT acquired during free breathing for 20 left-sided breast cancer patients, who underwent whole breast irradiation with or without regional nodal irradiation, were analyzed retrospectively. Dose distributions were reconstructed in the phases of 0%, 20%, and 50%. The intrafractional heart displacement was measured in three selected transverse CT slices using D{sub LAD} (the distance from left ascending aorta to a fixed line [connecting middle point of sternum and the body] drawn on each slice) and maximum heart depth (MHD, the distance of the forefront of the heart to the line). Linear regression analysis was used to correlate these indices with mean heart dose and heart dose volume at different breathing phases. Results: Respiration-induced heart displacement resulted in observable variations in dose delivered to the heart. During a normal free-breathing cycle, heart-induced motion D{sub LAD} and MHD changed up to 9 and 11 mm respectively, resulting in up to 38% and 39% increases of mean doses and V{sub 25.2} for the heart. MHD and D{sub LAD} were positively correlated with mean heart dose and heart dose volume. Respiratory-adapted gated treatment may better spare heart and ipsilateral-lung compared with the conventional non-gated plan in a subset of patients with large D{sub LAD} or MHD variations. Conclusion: Proposed indices offer novel assessment of heart displacement based on 4DCT images. MHD and D{sub LAD} can be used independently or jointly as selection criteria for respiratory gating procedure before treatment planning. Patients with great intrafractional MHD variations or tumor(s) close to the diaphragm may particularly benefit from the gated treatment.

Qi, X. Sharon, E-mail: xiangrong.qi@ucdenver.edu [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Hu, Angela [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Wang Kai [Department of Radiation Oncology, Medical College of Wisconsin, Milwaukee, WI (United States); Newman, Francis [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Crosby, Marcus; Hu Bin; White, Julia; Li, X. Allen [Department of Radiation Oncology, Medical College of Wisconsin, Milwaukee, WI (United States)

2012-04-01T23:59:59.000Z

479

A real time status monitor for transistor bank driver power limit resistor in boost injection kicker power supply  

SciTech Connect (OSTI)

For years suffering of Booster Injection Kicker transistor bank driver regulator troubleshooting, a new real time monitor system has been developed. A simple and floating circuit has been designed and tested. This circuit monitor system can monitor the driver regulator power limit resistor status in real time and warn machine operator if the power limit resistor changes values. This paper will mainly introduce the power supply and the new designed monitoring system. This real time resistor monitor circuit shows a useful method to monitor some critical parts in the booster pulse power supply. After two years accelerator operation, it shows that this monitor works well. Previously, we spent a lot of time in booster machine trouble shooting. We will reinstall all 4 PCB into Euro Card Standard Chassis when the power supply system will be updated.

Mi, J.; Tan, Y.; Zhang, W.

2011-03-28T23:59:59.000Z

480

DEPARTMENT OF CHEMICAL ENGINEERING DEPARTMENT OF MECHANICAL AND INDUSTRIAL ENGINEERING  

E-Print Network [OSTI]

-oxide-semiconductor field effect transistor (MOSFET) o Light emitting diodes (LEDs): principles and characteristics o

Massachusetts at Amherst, University of

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Oxidation resistant alloys, method for producing oxidation resistant alloys  

DOE Patents [OSTI]

A method for producing oxidation-resistant austenitic alloys for use at temperatures below 800.degree. C. comprising of: providing an alloy comprising, by weight %: 14-18% chromium, 15-18% nickel, 1-3% manganese, 1-2% molybdenum, 2-4% silicon, 0% aluminum and the balance being iron; heating the alloy to 800.degree. C. for between 175-250 hours prior to use in order to form a continuous silicon oxide film and another oxide film. The method provides a means of producing stainless steels with superior oxidation resistance at temperatures above 700.degree. C. at a low cost

Dunning, John S. (Corvallis, OR); Alman, David E. (Salem, OR)

2002-11-05T23:59:59.000Z

482

Oxidation resistant alloys, method for producing oxidation resistant alloys  

DOE Patents [OSTI]

A method for producing oxidation-resistant austenitic alloys for use at temperatures below 800 C. comprising of: providing an alloy comprising, by weight %: 14-18% chromium, 15-18% nickel, 1-3% manganese, 1-2% molybdenum, 2-4% silicon, 0% aluminum and the balance being iron; heating the alloy to 800 C. for between 175-250 hours prior to use in order to form a continuous silicon oxide film and another oxide film. The method provides a means of producing stainless steels with superior oxidation resistance at temperatures above 700 C. at a low cost

Dunning, John S.; Alman, David E.

2002-11-05T23:59:59.000Z

483

Implementation of controlled phase shift gates and Collins version of Deutsch-Jozsa algorithm on a quadrupolar spin-7/2 nucleus using non-adiabatic geometric phases  

E-Print Network [OSTI]

In this work Controlled phase shift gates are implemented on a qaudrupolar system, by using non-adiabatic geometric phases. A general procedure is given, for implementing controlled phase shift gates in an 'N' level system. The utility of such controlled phase shift gates, is demonstrated here by implementing 3-qubit Deutsch-Jozsa algorithm on a 7/2 quadrupolar nucleus oriented in a liquid crystal matrix.

T. Gopinath; Anil Kumar

2009-09-22T23:59:59.000Z

484

Patient radiation dose in prospectively gated axial CT coronary angiography and retrospectively gated helical technique with a 320-detector row CT scanner  

SciTech Connect (OSTI)

Purpose: The aim of this study was to evaluate radiation dose to patients undergoing computed tomography coronary angiography (CTCA) for prospectively gated axial (PGA) technique and retrospectively gated helical (RGH) technique. Methods: Radiation doses were measured for a 320-detector row CT scanner (Toshiba Aquilion ONE) using small sized silicon-photodiode dosimeters, which were implanted at various tissue and organ positions within an anthropomorphic phantom for a standard Japanese adult male. Output signals from photodiode dosimeters were read out on a personal computer, from which organ and effective doses were computed according to guidelines published in the International Commission on Radiological Protection Publication 103. Results: Organs that received high doses were breast, followed by lung, esophagus, and liver. Breast doses obtained with PGA technique and a phase window width of 16% at a simulated heart rate of 60 beats per minute were 13 mGy compared to 53 mGy with RGH technique using electrocardiographically dependent dose modulation at the same phase window width as that in PGA technique. Effective doses obtained in this case were 4.7 and 20 mSv for the PGA and RGH techniques, respectively. Conversion factors of dose length product to the effective dose in PGA and RGH were 0.022 and 0.025 mSv mGy{sup -1} cm{sup -1} with a scan length of 140 mm. Conclusions: CTCA performed with PGA technique provided a substantial effective dose reduction, i.e., 70%-76%, compared to RGH technique using the dose modulation at the same phase windows as those in PGA technique. Though radiation doses in CTCA with RGH technique were the same level as, or some higher than, those in conventional coronary angiography (CCA), the use of PGA technique reduced organ and effective doses to levels less than CCA except for breast dose.

Seguchi, Shigenobu; Aoyama, Takahiko; Koyama, Shuji; Fujii, Keisuke; Yamauchi-Kawaura, Chiyo [Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan) and Department of Medical Technology, Nagoya Daini Red Cross Hospital, Myouken-chou, Showa-ku, Nagoya 466-8650 (Japan); Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan); Section of Radiological Protection, National Institute of Radiological Sciences, Anagawa, Inage-ku, Chiba 263-8555 (Japan); Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan)

2010-11-15T23:59:59.000Z

485

Enhanced Thermal Conductivity Oxide Fuels  

SciTech Connect (OSTI)

the purpose of this project was to investigate the feasibility of increasing the thermal conductivity of oxide fuels by adding small fractions of a high conductivity solid phase.

Alvin Solomon; Shripad Revankar; J. Kevin McCoy

2006-01-17T23:59:59.000Z

486

Anodic oxidation of zircaloy-2  

Science Journals Connector (OSTI)

The anodic polarization of zircaloy-2 in different electrolytic baths has been investigated in order to obtain thick oxide films with properties suitable for wear applications.

A. Conte; A. Borello; A. Cabrini

1976-07-01T23:59:59.000Z

487

Operation of staged membrane oxidation reactor systems  

SciTech Connect (OSTI)

A method of operating a multi-stage ion transport membrane oxidation system. The method comprises providing a multi-stage ion transport membrane oxidation system with at least a first membrane oxidation stage and a second membrane oxidation stage, operating the ion transport membrane oxidation system at operating conditions including a characteristic temperature of the first membrane oxidation stage and a characteristic temperature of the second membrane oxidation stage; and controlling the production capacity and/or the product quality by changing the characteristic temperature of the first membrane oxidation stage and/or changing the characteristic temperature of the second membrane oxidation stage.

Repasky, John Michael

2012-10-16T23:59:59.000Z

488

Analytical expressions for the gate utilization factors of passive multiplicity counters including signal build-up  

SciTech Connect (OSTI)

In the realm of nuclear safeguards, passive neutron multiplicity counting using shift register pulse train analysis to nondestructively quantify Pu in product materials is a familiar and widely applied technique. The approach most commonly taken is to construct a neutron detector consisting of {sup 3}He filled cylindrical proportional counters embedded in a high density polyethylene moderator. Fast neutrons from the item enter the moderator and are quickly slowed down, on timescales of the order of 1-2 {micro}s, creating a thermal population which then persists typically for several 10's {micro}s and is sampled by the {sup 3}He detectors. Because the initial transient is of comparatively short duration it has been traditional to treat it as instantaneous and furthermore to approximate the subsequent capture time distribution as exponential in shape. With these approximations simple expressions for the various Gate Utilization Factors (GUFs) can be obtained. These factors represent the proportion of time correlated events i.e. Doubles and Triples signal present in the pulse train that is detected by the coincidence gate structure chosen (predelay and gate width settings of the multiplicity shift register). More complicated expressions can be derived by generalizing the capture time distribution to multiple time components or harmonics typically present in real systems. When it comes to applying passive neutron multiplicity methods to extremely intense (i.e. high emission rate and highly multiplying) neutron sources there is a drive to use detector types with very fast response characteristics in order to cope with the high rates. In addition to short pulse width, detectors with a short capture time profile are also desirable so that a short coincidence gate width can be set in order to reduce the chance or Accidental coincidence signal. In extreme cases, such as might be realized using boron loaded scintillators, the dieaway time may be so short that the build-up (thermalization transient) within the detector cannot be ignored. Another example where signal build-up might be observed is when a {sup 3}He based system is used to track the evolution of the time correlated signal created by a higher multiplying item within a reflective configuration such as the measurement of a spent fuel assembly. In this work we develop expressions for the GUFs which include signal build-up.

Croft, Stephen [Los Alamos National Laboratory; Evans, Louise G [Los Alamos National Laboratory; Schear, Melissa A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

489

Universal conductance fluctuations in electrolyte-gated SrTiO{sub 3} nanostructures  

SciTech Connect (OSTI)

We report low-temperature magnetoconductance measurements of a patterned two-dimensional electron system at the surface of strontium titanate, gated by an ionic liquid electrolyte. We observe universal conductance fluctuations, a signature of phase-coherent transport in mesoscopic devices. From the universal conductance fluctuations, we extract an electron dephasing rate linear in temperature, characteristic of electron-electron interaction in a disordered conductor. The dephasing rate has a temperature-independent offset, which could possibly be explained by the presence of unscreened local magnetic moments in the sample.

Stanwyck, Sam W. [Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)] [Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Gallagher, P.; Williams, J. R.; Goldhaber-Gordon, David [Department of Physics, Stanford University, Stanford, California 94305 (United States)] [Department of Physics, Stanford University, Stanford, California 94305 (United States)

2013-11-18T23:59:59.000Z

490

Simple Template-Based Method to Produce Bradbury-Nielsen Gates  

Science Journals Connector (OSTI)

A Bradbury-Nielsen gate (BNG) consists of two interleaved and electrically isolated sets of wires and can transmit or deflect charged particles by applying a varying voltage difference across the two wire sets. We present a simple template-based method to fabricate \\{BNGs\\} with wire spacings as small as 50 ?m with minimal use of a microscope. The small wire spacing allows modulation rates at tens of megahertz. Using this method, we have fabricated four \\{BNGs\\} with wire spacings of 500, 200, 100, and 50 ?m using 10 ?m gold-coated tungsten wires. The performance of the four \\{BNGs\\} is characterized using an imaging detector and compared with theoretical predictions.

Oh Kyu Yoon; Ignacio A. Zuleta; Matthew D. Robbins; Griffin K. Barbula; Richard N. Zare

2007-01-01T23:59:59.000Z

491

Catalytic wet oxidation of phenolic wastes  

E-Print Network [OSTI]

Possible catalyst deactivation problems High capital, low operating Supercritical water oxidation (SCWO) Feasible only at high organic concentra- tions High Fast reaction, complete oxidation Severe reaction conditions, canosion problems... of milder reaction conditions and is much less energy intensive. Thus, catalytic wet oxidation would be an alternative to solvent extraction, supercritical water oxidation, homogeneous oxidation, and incineration. It should also be feasible at low...

Thomas, Brook James

1995-01-01T23:59:59.000Z

492

Low Temperature Constrained Sintering of Cerium Gadolinium Oxide Films for Solid Oxide Fuel Cell Applications  

E-Print Network [OSTI]

Temperature Solid Oxide Fuel Cells, In: S.C. Singhal and M.solidoxide.html, Tubular Solid Oxide Fuel Cell Technology,Oxide Films for Solid Oxide Fuel Cell Applications by Jason

Nicholas, Jason.D.

2007-01-01T23:59:59.000Z

493

As you prepare for your upcoming beam time, please be aware that construction is planned to update SLAC Gate 17 with RFID proximity card access hardware and to change the stairs next to the Security hut to an ADA compliant ramp. Please forward this to your proposal collaborators (and ensure that all users have registered and completed training before they arrive). This construction is scheduled to begin Tuesday 5/28 and be completed by 6/28. During this construction, access to the LCLS and SSRL buildings and experimental facilities will be provided as follows: VEHICLES ONLY THROUGH GATE 17 5/28-6/28 0600-1530 (6 am-3:30 pm) Construction Zone. Only VEHICLE traffic will be allowed access through Gate 17 and flagman will provide traffic control. 1530-1800 (3:30-6:00 pm) Assumes construction will have stopped for the day; both traffic lanes will be open for vehicles. 1800-0600 (6 pm-6 am) As now, Gate 17 will be closed or barricaded overnight. PEDESTRIANS ONLY THROUGH GATE 16 5/28-6/28 The pedestrian turnstile at Gate 16A will not change. The turnstile is available for pedestrian use 24/7 as long as the individual has a valid SLAC ID badge (and there is a guard at Gate 30 to 'buzz' them through). 0700-1600 (6 am-4 pm) Pedestrians who would normally walk through Gate 17 will instead follow the detour to Gate 16 swing gate which will be unlocked and staffed by Security. A valid SLAC ID badge is needed to enter; new users without IDs will be allowed to proceed for check-in and badging after confirmation with the User Research Administration Office (see detour map attached). FYI - After the construction is completed and proximity card readers are fully functional, users and staff will enter Gates 17 and 30 using an activated RFID proximity card. More details to follow.  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Automated Proximity Access at Gate 17 and Sector 30 Automated Proximity Access at Gate 17 and Sector 30 New SLAC ID badges with embedded RFID are used to activate these gates and for off-hours access at the main entrance off Sand Hill Road as well as Alpine Road (gates will be accessible 24/7) . New user badges include this proximity gate activation feature, but older photo IDs need to be updated. Users are advised to register, complete training and contact the User Research Administration (URA) office before arrival for beam time to help facilitate access. During the transition period, July 26-August 9, 2013 users can inform Security at Gate 17 that they are checking in and proceed to the URA office in Building 120; however, after August 9 th , users without a proximity activated ID need to stop at

494

Copolymer semiconductors comprising thiazolothiazole or benzobisthiazole, or benzobisoxazole electron acceptor subunits, and electron donor subunits, and their uses in transistors and solar cells  

DOE Patents [OSTI]

The inventions disclosed, described, and/or claimed herein relate to copolymers comprising copolymers comprising electron accepting A subunits that comprise thiazolothiazole, benzobisthiazole, or benzobisoxazoles rings, and electron donating subunits that comprise certain heterocyclic groups. The copolymers are useful for manufacturing organic electronic devices, including transistors and solar cells. The invention also relates to certain synthetic precursors of the copolymers. Methods for making the copolymers and the derivative electronic devices are also described.

Jenekhe, Samson A; Subramaniyan, Selvam; Ahmed, Eilaf; Xin, Hao; Kim, Felix Sunjoo

2014-10-28T23:59:59.000Z

495

Deep oxidation of glucose in enzymatic fuel cells through a synthetic enzymatic pathway containing a cascade of two thermostable dehydrogenases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Deep Deep oxidation of glucose in enzymatic fuel cells through a synthetic enzymatic pathway containing a cascade of two thermostable dehydrogenases Zhiguang Zhu a , Fangfang Sun a , Xiaozhou Zhang a,d , Y.-H. Percival Zhang a,b,c,d,n a Biological Systems Engineering Department, Virginia Polytechnic Institute and State University (Virginia Tech), 210-A Seitz Hall, Blacksburg, Virginia 24061, USA b Institute for Critical Technology and Applied Science (ICTAS), Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061, USA c DOE BioEnergy Science Center (BESC), Oak Ridge, Tennessee 37831, USA d Gate Fuels Inc., 2200 Kraft Drive, Suite 1200B, Blacksburg, VA 24060, USA a r t i c l e i n f o Article history: Received 12 January 2012 Received in revised form 26 March 2012 Accepted 4 April 2012 Keywords: Deep oxidation Enzymatic fuel cell Glucose biobattery Thermoenzyme

496

Metal oxide films on metal  

DOE Patents [OSTI]

A structure including a thin film of a conductive alkaline earth metal oxide selected from the group consisting of strontium ruthenium trioxide, calcium ruthenium trioxide, barium ruthenium trioxide, lanthanum-strontium cobalt oxide or mixed alkaline earth ruthenium trioxides thereof upon a thin film of a noble metal such as platinum is provided.

Wu, Xin D. (Los Alamos, NM); Tiwari, Prabhat (Los Alamos, NM)

1995-01-01T23:59:59.000Z

497

Ethylene Oxide for Soil Sterilization  

Science Journals Connector (OSTI)

... , this method may be time-consuming, and in view of the physical properties of ethylene oxide (solubility in water and boiling point 12-5 C.) it was considered ... consists of making up an aqueous solution to supply 2 or 4 c.c. of ethylene oxide in a given amount of water, using pre-chilled glassware and water. The ...

R. E. ROSE; R. W. BAILEY

1952-04-26T23:59:59.000Z

498

Temperature dependence of a high- T c single-flux-quantum logic gate up to 50 K  

Science Journals Connector (OSTI)

Basic characteristics of a simple single-flux-quantum (SFQ) logic gate using high- T c material and Josephson junction ( NdBa 2 Cu 3 O 7?? and focused ion beamjunction) have been investigated. The logic gate consists of an rf-superconducting quantum interference device (rf-SQUID) and a dc-SQUID. In the logic gate elementary SFQ logic operations such as generating SFQ (dc/SFQ) and providing simultaneous readout (SFQ/dc) have been confirmed up to 50 K. The temperature dependencies of the output voltage level and the critical current-normal resistance (I c R n ) product were compared and the decreasing tendency of the output voltage level for increasing temperature was found to be more rapid than that of the I c R n product.

Kazuo Saitoh; Tadashi Utagawa; Youichi Enomoto

1998-01-01T23:59:59.000Z

499

Ultra Supercritical Steamside Oxidation  

SciTech Connect (OSTI)

Ultra supercritical (USC) power plants offer the promise of higher efficiencies and lower emissions, which are goals of the U.S. Department of Energy's Advanced Power Systems Initiatives. Most current coal power plants in the U.S. operate at a maximum steam temperature of 538 C. However, new supercritical plants worldwide are being brought into service with steam temperatures of up to 620 C. Current Advanced Power Systems goals include coal generation at 60% efficiency, which require steam temperatures of up to 760 C. This research examines the steamside oxidation of advanced alloys for use in USC systems, with emphasis placed on alloys for high- and intermediate-pressure turbine sections. Initial results of this research are presented.

Holcomb, Gordon R.; Cramer, Stephen D.; Covino, Bernard S., Jr.; Bullard, Sophie J.; Ziomek-Moroz, Malgorzata

2005-01-01T23:59:59.000Z

500

Nanostructured Solid Oxide Fuel Cell Electrodes  

E-Print Network [OSTI]

post-Doping of Solid Oxide Fuel Cell Cathodes,? P.h.D.and V. I. Birss, in Solid Oxide Fuel Cells (SOFC IX), S. C.Nanostructured Solid Oxide Fuel Cell Electrodes By Tal Zvi

Sholklapper, Tal Zvi

2007-01-01T23:59:59.000Z