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1

Looking at Transistor Gate Oxide Formation in Real Time  

NLE Websites -- All DOE Office Websites (Extended Search)

Looking at Transistor Gate Oxide Formation in Real Time Print Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained real-time oxidation results for this elusive range. Using the ambient-pressure x-ray photoelectron spectroscopy (APXPS) endstation at ALS Beamline 9.3.2, they examined oxidation of Si(100) at pressures up to 1 torr and temperatures up to 450 ºC. The Si 2p chemical shifts allowed determination of oxide thickness as a function of time with a precision of 1-2 Å. The initial oxidation rate was very high (up to ~234 Å/h). Then, after an initial oxide thickness of 6-22 Å was formed, the rate decreased markedly (~1.5-4.0Å/h). Neither rate regime can be explained by the standard Deal-Grove (D-G) model for Si oxidation. These results are a significant step toward developing a better understanding of this critical thickness regime.

2

Looking at Transistor Gate Oxide Formation in Real Time  

NLE Websites -- All DOE Office Websites (Extended Search)

Looking at Transistor Gate Oxide Formation in Real Time Print Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained real-time oxidation results for this elusive range. Using the ambient-pressure x-ray photoelectron spectroscopy (APXPS) endstation at ALS Beamline 9.3.2, they examined oxidation of Si(100) at pressures up to 1 torr and temperatures up to 450 ºC. The Si 2p chemical shifts allowed determination of oxide thickness as a function of time with a precision of 1-2 Å. The initial oxidation rate was very high (up to ~234 Å/h). Then, after an initial oxide thickness of 6-22 Å was formed, the rate decreased markedly (~1.5-4.0Å/h). Neither rate regime can be explained by the standard Deal-Grove (D-G) model for Si oxidation. These results are a significant step toward developing a better understanding of this critical thickness regime.

3

Looking at Transistor Gate Oxide Formation in Real Time  

NLE Websites -- All DOE Office Websites (Extended Search)

Looking at Transistor Gate Oxide Formation in Real Time Print Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained real-time oxidation results for this elusive range. Using the ambient-pressure x-ray photoelectron spectroscopy (APXPS) endstation at ALS Beamline 9.3.2, they examined oxidation of Si(100) at pressures up to 1 torr and temperatures up to 450 ºC. The Si 2p chemical shifts allowed determination of oxide thickness as a function of time with a precision of 1-2 Å. The initial oxidation rate was very high (up to ~234 Å/h). Then, after an initial oxide thickness of 6-22 Å was formed, the rate decreased markedly (~1.5-4.0Å/h). Neither rate regime can be explained by the standard Deal-Grove (D-G) model for Si oxidation. These results are a significant step toward developing a better understanding of this critical thickness regime.

4

Gated Conductance of Thin Indium Tin Oxide - The Simplest Transistor  

E-Print Network (OSTI)

Transistors are the fundamental building block of modern electronic devices. So far, all transistors are based on various types of semiconductor junctions. The most common bipolar-junction transistors and metal-oxide-semiconductor field-effect transistors contain p-n junctions to control the current, depending on applied biases across the junctions. Thin-film transistors need metal-semiconductor junctions for injecting and extracting electrons from their channels. Here, by coating a heavily-doped thin indium-tin-oxide (ITO) film through a shadow mask onto a biopolymer chitosan/ITO/glass substrate, we can have a high-performance junctionless transparent organic-inorganic hybrid thin film transistor. This could be the simplest transistor in the world, to our knowledge, not only in its structure, but also its fabrication process. In addition, the device performance is found to be greatly enhanced using a reinforced chitosan/SiO2 hybrid bilayer dielectric stack. Our results clearly show that this architecture can...

Jiang, Jie; Sun, Jia; Dou, Wei; Zhang, Qing

2012-01-01T23:59:59.000Z

5

Dual Gate Thin Film Transistors Based on Indium Oxide Active Layers  

SciTech Connect

Polycrystalline Indium Oxide (In{sub 2}O{sub 3}) thin films were employed as an active channel layer for the fabrication of bottom and top gate thin film transistors. While conventional SiO{sub 2} served as a bottom gate dielectric, cross-linked poly-4-vinylphenol (PVP) was used a top gate dielectric. These nano-crystalline TFTs exhibited n-channel behavior with their transport behavior highly dependent on the thickness of the channel. The correlation between the thickness of the active layer and TFT parameters such as on/off ratio, field-effect mobility, threshold voltage were carried out. The optical spectra revealed a high transmittance in the entire visible region, thus making them promising candidates for the display technology.

Kekuda, Dhananjaya; Rao, K. Mohan; Tolpadi, Amita [Department of Physics, Manipal Institute of Technology, Manipal University, Manipal 576 104 (India); Chu, C. W. [Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan (China)

2011-07-15T23:59:59.000Z

6

Looking at Transistor Gate Oxide Formation in Real Time  

NLE Websites -- All DOE Office Websites (Extended Search)

elemental Si (Si0) and the peak at the ca. 4.4 eV higher binding energy as that of stoichiometric oxide (Si4+). From the measured ratio of Si4+ intensity to Si0, the thickness of...

7

Simulation of multiple-gate quantum stub transistor  

Science Conference Proceedings (OSTI)

The quantum stub transistor has the potential for ultrafast, ultra low power signal processing in high density integrated circuits. However, the single gate stub transistor presents the shortcoming of requiring highly precise gate voltage to close the ... Keywords: multiple gate, simulation, stub transistor

Edval J. P. Santos; Alexandre B. Guerra

2005-08-01T23:59:59.000Z

8

Comparison between chemical vapor deposited and physical vapor deposited WSi{sub 2} metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors  

Science Conference Proceedings (OSTI)

We compare chemical vapor deposition (CVD) and physical vapor deposition (PVD) WSi{sub 2} metal gate process for In{sub 0.53}Ga{sub 0.47}As n-metal-oxide-semiconductor field-effect transistors using 10 and 6.5 nm Al{sub 2}O{sub 3} as dielectric layer. The CVD-processed metal gate device with 6.5 nm Al{sub 2}O{sub 3} shows enhanced transistor performance such as drive current, maximum transconductance and maximum effective mobility. These values are relatively better than the PVD-processed counterpart device with improvement of 51.8%, 46.4%, and 47.8%, respectively. The improvement for the performance of the CVD-processed metal gate device is due to the fluorine passivation at the oxide/semiconductor interface and a nondestructive deposition process.

Ong, B. S.; Pey, K. L. [Advanced Materials for Micro and Nano-Systems, Singapore-MIT Alliance, Singapore 637460 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Ong, C. Y.; Tan, C. S. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Antoniadis, D. A. [Advanced Materials for Micro and Nano-Systems, Singapore-MIT Alliance, Singapore 637460 (Singapore); Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Fitzgerald, E. A. [Advanced Materials for Micro and Nano-Systems, Singapore-MIT Alliance, Singapore 637460 (Singapore); Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2011-05-02T23:59:59.000Z

9

The Difficulty of Gate Control in Molecular Transistors  

E-Print Network (OSTI)

The electrostatic gating effects on molecular transistors are investigated using the density functional theory (DFT) combined with the nonequilibrium Green's function (NEGF) method. When molecular energy levels are away from the Fermi energy they can be linearly shifted by the gate voltage, which is consistent with recent experimental observations [Nature 462, 1039 (2009)]. However, when they move near to the Fermi energy (turn-on process), the shifts become extremely small and almost independent of the gate voltage. The fact that the conductance may be beyond the gate control in the "ON" state will challenge the implementation of molecular transistors.

D. Hou; J. H. Wei

2011-09-27T23:59:59.000Z

10

Electroluminescence in ion gel gated organic polymer semiconductor transistors  

E-Print Network (OSTI)

emission in ion gel gated, thin film organic semiconductor tran- sistors and investigates the light emission mechanism behind these devices. We report that ion gel gated organic polymer semiconductor transistors emit light when the drain source volt- age... the organic light emitting devices become mainstream, there are several challenges that need to be resolved and current research focus is to ad- dress those challenges. One particular challenge is relatively high operating volt- ages of light emitting organic...

Bhat, Shrivalli

2011-07-12T23:59:59.000Z

11

Uniaxial Strain Effects on the Performance of a Ballistic Top Gate Graphene Nanoribbon on Insulator Transistor  

Science Conference Proceedings (OSTI)

The effects of uniaxial strain on the bandgap and performance of a top gate graphene nanoribbon (GNR) on insulator transistor are studied using pi-orbital basis 3-D ballistic quantum simulation. The bandgap variation with strain shows zigzag pattern ... Keywords: Graphene nanoribbon (GNR) on insulator transistor, nonequilibrium Green's function (NEGF) formalism, performance of GNR transistor, strain effects

K. Alam

2009-07-01T23:59:59.000Z

12

GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

A GaN based depletion mode metal oxide semiconductor field effect transistor (MOSFET) was demonstrated using Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as the gate dielectric. The MOS gate reverse breakdown voltage was > 35V which was significantly improved from 17V of Pt Schottky gate on the same material. A maximum extrinsic transconductance of 15 mS/mm was obtained at V{sub ds} = 30 V and device performance was limited by the contact resistance. A unity current gain cut-off frequency, f{sub {tau}}, and maximum frequency of oscillation, f{sub max} of 3.1 and 10.3 GHz, respectively, were measured at V{sub ds} = 25 V and V{sub gs} = {minus}20 V.

Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Schurman, M.J.

1999-03-02T23:59:59.000Z

13

Evaluation of hydrogen and ammonia gas mixtures with the suspended- gate field-effect transistor sensor array  

DOE Green Energy (OSTI)

Generation of hydrogen represents a severe industrial hazard primarily because the mixture of hydrogen with air in the ratio 4.0--74.2 vol % is explosive. In some industrial applications, such as waste remediation, hydrogen, as a product of radiolysis and corrosion, occurs in the presence of ammonia, nitrous oxide, water vapor and other molecules. A low cost, reliable method for monitoring these gaseous mixtures is essential. Palladium-based layers have been used successfully as hydrogen sensitive layers in several potentiometric sensors for many years. Since the sensing mechanism is based on the catalytic decomposition of hydrogen molecules, other hydrogen-bearing gases can also produce a response. From this viewpoint, using an array of sensing elements with catalytic and noncatalytic chemically selective layers in these applications can be highly effective. Moreover, integration of this array on a single chip can be routinely achieved. The Suspended Gate Field-Effect Transistor (SGFET) is microfabricated in silicon. The metal gate of the transistor is separated from the substrate by an air gap. The chemically sensitive layer is electrodeposited on the bottom of the suspended gate. Chemical species can penetrate into the gate area and interact with the sensing layer. This interaction modulates the work function of the layer. The change in the work function results in the shift of the transistor threshold voltage. The measured threshold voltage shift is a function of the gas concentration in the sensor vicinity. By passing a small current through the suspended gate, it is possible to control the operating temperature of the sensing layer (up to 200{degrees}C) and, therefore, to modulate the sensor sensitivity, selectivity, response and recovery times. Due to the very low thermal mass, the heat is localized on the gate so that many devices can be operated on a single chip, each with the gate at different temperature.

Domansky, K.; Li, H.S.; Josowicz, M.; Janata, J.

1995-12-01T23:59:59.000Z

14

Light-induced switching in the back-gated organic transistors with built-in conduction channel  

E-Print Network (OSTI)

We report on observation of a light-induced switching of the conductance in the back-gated organic field-effect transistors (OFETs) with built-in conduction channel. In the studied devices, the built-in channel is formed owing to the self-sensitized photo-oxidation of rubrene surface. In the dark, the back gate controls the charge injection from metal contacts into the built-in channel: the high-current ON state corresponds to zero or negative back-gate voltage; the low-current OFF state - to a positive back-gate voltage that blocks the Schottky contacts. Illumination of the OFET in the OFF state with a short pulse of light switches the device into the ON state that persists in the dark for days. The OFF state can be restored by cycling the back gate voltage. The observed effect can be explained by screening of the back-gate electric field by the charges photo-generated in the bulk of organic semiconductor.

V. Podzorov; V. M. Pudalov; M. E. Gershenson

2004-06-29T23:59:59.000Z

15

Near room temperature lithographically processed metal-oxide transistors  

E-Print Network (OSTI)

A fully lithographic process at near-room-temperature was developed for the purpose of fabricating transistors based on metal-oxide channel materials. The combination of indium tin oxide (ITO) as the source/drain electrodes, ...

Tang, Hui, M. Eng. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

16

Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

1998-10-14T23:59:59.000Z

17

Damascene TiN-Gd2O3-gate stacks: Gentle fabrication and electrical properties  

Science Conference Proceedings (OSTI)

In this work, we present MOS capacitors and field effect transistors with a crystalline gadolinium oxide (Gd"2O"3) gate dielectric and metal gate electrode (titanium nitride) fabricated in a gentle damascene gate last process. Details of the gate last ... Keywords: Crystalline high-k dielectrics, Damascene metal gate technology, Gadolinium oxide (Gd2O3), Gentle process integration, MOSFET, Metal gate electrode

Ralf Endres; Tillmann Krauss; Frank Wessely; Udo Schwalke

2011-12-01T23:59:59.000Z

18

Estimation of gate-to-channel tunneling current in ultra-thin oxide sub-50nm double gate devices  

Science Conference Proceedings (OSTI)

Double gate (DG) FETs have emerged as the most promising technology for sub-50nm transistor design. However, analysis and control of the gate tunneling leakage in DGFET is necessary to fully exploit their advantages. In this paper we have modeled (numerically ... Keywords: Direct tunneling, Double gate, Leakage, Quantum confinement

Saibal Mukhopadhyay; Keunwoo Kim; Jae-Joon Kim; Shih-Hsien Lo; Rajiv V. Joshi; Ching-Te Chuang; Kaushik Roy

2007-08-01T23:59:59.000Z

19

Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors  

Science Conference Proceedings (OSTI)

We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (?-HfIZO) thin film transistors (TFTs). Co-sputtering-processed ?-HfIZO thin films have shown an amorphous phase in nature. ...

Sheng-Po Chang; San-Syong Shih

2012-01-01T23:59:59.000Z

20

Case Studies on Variation Tolerant and Low Power Design Using Planar Asymmetric Double Gate Transistor  

E-Print Network (OSTI)

In nanometer technologies, process variation control and low power have emerged as the first order design goal after high performance. Process variations cause high variability in performance and power consumption of an IC, which affects the overall yield. Short channel effects (SCEs) deteriorate the MOSFET performance and lead to higher leakage power. Double gate devices suppress SCEs and are potential candidates for replacing Bulk technology in nanometer nodes. Threshold voltage control in planar asymmetric double gate transistor (IGFET) using a fourth terminal provides an effective means of combating process variations and low power design. In this thesis, using various case studies, we analyzed the suitability of IGFET for variation control and low power design. We also performed an extensive comparison between IGFET and Bulk for reducing variability, improving yield and leakage power reduction using power gating. We also proposed a new circuit topology for IGFET, which on average shows 33.8 percent lower leakage and 34.9 percent lower area at the cost of 2.8 percent increase in total active mode power, for basic logic gates. Finally, we showed a technique for reducing leakage of minimum sized devices designed using new circuit topology for IGFET.

Singh, Amrinder

2010-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

( gate=nickel)/(barrier=GaN/Al (y) Ga (1?y) N)/(buffer=GaN)/(substrate=SiC ) polarizationinduced high electron mobility transistors (PI-HEMTs) show promise for ultrahigh power microwave amplification. The polarization fields in these Ga-face

Lester F. Eastman

1999-01-01T23:59:59.000Z

22

A Strained Organic Field-Effect-Transistor with a Gate-Tunable Superconducting Channel  

E-Print Network (OSTI)

In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high performance computing and should be valid for electric-field-induced superconducting devices, too. However, so far, the carrier density is the sole parameter for field-induced superconducting interfaces. Here we show an active organic superconducting field-effect-transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced superconducting state accessible at low temperature with a paraelectric solid gate. An active three terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled superconducting phases in correlated materials.

Hiroshi M. Yamamoto; Masaki Nakano; Masayuki Suda; Yoshihiro Iwasa; Masashi Kawasaki; Reizo Kato

2013-09-02T23:59:59.000Z

23

Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology  

E-Print Network (OSTI)

A novel high-k gate dielectric material, i.e., hafnium-doped tantalum oxide (Hf-doped TaOx), has been studied for the application of the future generation metal-oxidesemiconductor field effect transistor (MOSFET). The film's electrical, chemical, and structural properties were investigated experimentally. The incorporation of Hf into TaOx impacted the electrical properties. The doping process improved the effective dielectric constant, reduced the fixed charge density, and increased the dielectric strength. The leakage current density also decreased with the Hf doping concentration. MOS capacitors with sub-2.0 nm equivalent oxide thickness (EOT) have been achieved with the lightly Hf-doped TaOx. The low leakage currents and high dielectric constants of the doped films were explained by their compositions and bond structures. The Hf-doped TaOx film is a potential high-k gate dielectric for future MOS transistors. A 5 ?? tantalum nitride (TaNx) interface layer has been inserted between the Hf-doped TaOx films and the Si substrate to engineer the high-k/Si interface layer formation and properties. The electrical characterization result shows that the insertion of a 5 ?? TaNx between the doped TaOx films and the Si substrate decreased the film's leakage current density and improved the effective dielectric constant (keffective) value. The improvement of these dielectric properties can be attributed to the formation of the TaOxNy interfacial layer after high temperature O2 annealing. The main drawback of the TaNx interface layer is the high interface density of states and hysteresis, which needs to be decreased. Advanced metal nitride gate electrodes, e.g., tantalum nitride, molybdenum nitride, and tungsten nitride, were investigated as the gate electrodes for atomic layer deposition (ALD) HfO2 high-k dielectric material. Their physical and electrical properties were affected by the post metallization annealing (PMA) treatment conditions. Work functions of these three gate electrodes are suitable for NMOS applications after 800?°C PMA. Metal nitrides can be used as the gate electrode materials for the HfO2 high-k film. The novel high-k gate stack structures studied in this study are promising candidates to replace the traditional poly-Si-SiO2 gate stack structure for the future CMOS technology node.

Lu, Jiang

2005-12-01T23:59:59.000Z

24

A Low Temperature Fully Lithographic Process For MetalOxide Field-Effect Transistors  

E-Print Network (OSTI)

We report a low temperature ( ~ 100 °C) lithographic method for fabricating hybrid metal oxide/organic field-effect transistors (FETs) that combine a zinc-indium-oxide (ZIO) semiconductor channel and organic, parylene, ...

Sodini, Charles G.

25

Twin logic gates: improved logic reliability by redundancy concerning gate oxide breakdown  

Science Conference Proceedings (OSTI)

Because of the aggressive scaling of integrated circuits and the given limits of atomic scales, circuit designers have to become more and more aware of the arising reliability and yield concerns. So far, only very little research efforts have been put ... Keywords: gate oxide breakdown, integrated circuit design, redundant systems, reliability

Hagen Saemrow; Claas Cornelius; Frank Sill; Andreas Tockhorn; Dirk Timmermann

2009-08-01T23:59:59.000Z

26

K9, Thin Film Encapsulation of Oxide Based Thin Film Transistors  

Science Conference Proceedings (OSTI)

In optimized TTFTs with a composition of [Zn]: [Sn] = 36:64 the relative change of the saturated ... DD4, Oxygen Plasma Exposure Effects on Indium Oxide Nanowire Transistors ... Electronic Materials Science Challenges in Renewable Energy.

27

SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors  

Science Conference Proceedings (OSTI)

Hydrothermally grown SnO2 was integrated with AlGaN/GaN high electron mobility transistor (HEMT) sensor as the gate electrode for oxygen detection. The crystalline of the SnO2 was improved after annealing at 400 C. The grain growth kinetics of the SnO2 nanomaterials, together with the O2 gas sensing properties and sensing mechanism of the SnO2 gated HEMT sensors were investigated. Detection of 1% oxygen in nitrogen at 100 C was possible. A low operation temperature and low power consumption oxygen sensor can be achieved by combining the SnO2 films with the AlGaN/GaN HEMT structure

Hung, S.T. [Feng Chia University, Taichung, Taiwan; Chung, Chi-Jung [Feng Chia University, Taichung, Taiwan; Chen, Chin Ching [University of Florida, Gainesville; Lo, C. F. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

28

Reducing transistor count in clocked standard cells with ambipolar double-gate FETs  

Science Conference Proceedings (OSTI)

This paper presents a set of circuit design approaches to achieve clocked standard logic cell functions with ambipolar double-gate devices such as the Double Gate Carbon Nanotube FET (DG-CNTFET). The cells presented in this work use the infield controllability ... Keywords: CNTFETs, advanced technologies, ambipolar double-gate devices, dynamic logic, standard cells

K. Jabeur; D. Navarro; I. O'Connor; P. E. Gaillardon; M. H. Ben Jamaa; F. Clermidy

2010-06-01T23:59:59.000Z

29

Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Based Gate Metallization  

Science Conference Proceedings (OSTI)

The critical voltage for degradation of AlGaN/GaN high electron mobility transistors (HEMTs) employed with the Pt/Ti/Au gate metallization instead of the commonly used Ni/Au was significantly increased during the off-state stress. The typical critical voltage for HEMTs with Ni/Au gate metallization was around -60V. By sharp contrast, no critical voltage was observed for the HEMTs with Pt/Ti/Au gate metallization, even up to -100V, which was the instrumental limitation in this experiment. Both Schottky forward and reverse gate characteristics of the Ni/Au degraded once the gate voltage passed the critical voltage of around -60V. There was no degradation exhibited for the HEMTs with Pt-gated HEMTs.

Lo, C. F. [University of Florida; Liu, L. [University of Florida, Gainesville; Kang, Tsung Sheng [University of Florida, Gainesville; Davies, Ryan [University of Florida; Gila, Brent P. [University of Florida, Gainesville; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Ren, F. [University of Florida

2011-01-01T23:59:59.000Z

30

Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films  

E-Print Network (OSTI)

Nanocrystals embedded zirconium-doped hafnium oxide (ZrHfO) high-k gate dielectric films have been studied for the applications of the future metal oxide semiconductor field effect transistor (MOSFET) and nonvolatile memory. ZrHfO has excellent gate dielectric properties and can be prepared into MOS structure with a low equivalent oxide thickness (EOT). Ruthenium (Ru) modification effects on the ZrHfO high-k MOS capacitor have been investigated. The bulk and interfacial properties changed with the inclusion of Ru nanoparticles. The permittivity of the ZrHfO film was increased while the energy depth of traps involved in the current transport was lowered. However, the barrier height of titanium nitride (TiN)/ZrHfO was not affected by the Ru nanoparticles. These results can be important to the novel metal gate/high-k/Si MOS structure. The Ru-modified ZrHfO gate dielectric film showed a large breakdown voltage and a long lifetime. The conventional polycrystalline Si (poly-Si) charge trapping layer can be replaced by the novel floating gate structure composed of discrete nanodots embedded in the high-k film. By replacing the SiO2 layer with the ZrHfO film, promising memory functions, e.g., low programming voltage and long charge retention time, can be expected. In this study, the ZrHfO high-k MOS capacitors that separately contain nanocrystalline ruthenium oxide (nc-RuO), indium tin oxide (nc-ITO), and zinc oxide (nc-ZnO) have been successfully fabricated by the sputtering deposition method followed with the rapid thermal annealing process. Material and electrical properties of these kinds of memory devices have been investigated using analysis tools such as XPS, XRD, and HRTEM; electrical characterizations such as C-V, J-V, CVS, and frequency-dependent measurements. All capacitors showed an obvious memory window contributed by the charge trapping effect. The formation of the interface at the nc-RuO/ZrHfO and nc-ITO/ZrHfO contact regions was confirmed by the XPS spectra. Charges were deeply trapped to the bulk nanocrystal sites. However, a portion of holes were loosely trapped at the nanocrystal/ZrHfO interface. Charges trapped to the different sites lead to different detrapping characteristics. For further improving the memory functions, the dual-layer nc-ITO and -ZnO embedded ZrHfO gate dielectric stacks have been fabricated. The dual-layer embedded structure contains two vertically-separated nanocrystal layers with a higher density than the single-layer embedded structure. The critical memory functions, e.g., memory window, programming efficiency, and charge retention can be improved by using the dual-layer nanocrystals embedded floating gate structure. This kind of gate dielectric stack is vital for the next-generation nonvolatile memory applications.

Lin, Chen-Han

2011-08-01T23:59:59.000Z

31

Dry etching device quality high-? GaxGdyOz gate oxide in SiCl4 chemistry for low resistance ohmic contact realisation in fabricating III-V MOSFETs  

Science Conference Proceedings (OSTI)

This paper investigates the reactive ion etching (RIE) of Ga"xGd"yO"z, a device quality high-@k gate oxide for a low resistance ohmic contact realisation in fabricating III-V metal-oxide semiconductor field-effect-transistors (MOSFETs) based on high ... Keywords: Dry etching, Ga2O3-Gd2O3, GaxGdyOz, GaAs MOSFET, High-? oxide, RIE, SiCl4

X. Li; H. Zhou; R. J. W. Hill; P. Longo; M. Holland; I. G. Thayne

2010-05-01T23:59:59.000Z

32

Gate capacitance modeling and width-dependent performance of graphene nanoribbon transistors  

Science Conference Proceedings (OSTI)

The width-dependent performance of armchair GNRs-FETs is investigated by developing a fully analytical gate capacitance model based on effective mass approximation and semiclassical ballistic transport. The model incorporates the effects of edge bond ... Keywords: Analytic ballistic model, Gate capacitance, Graphene FETs, Graphene nanoribbons, Performance metrics

George S. Kliros

2013-12-01T23:59:59.000Z

33

Carrier mobility measurement across a single grain boundary in polycrystalline silicon using an organic gate thin-film transistor  

Science Conference Proceedings (OSTI)

In this study, we developed a measurement method for field-effect-carrier mobility across a single grain boundary in polycrystalline Si (poly Si) used for solar cell production by using an organic gate field-effect transistor (FET). To prevent precipitation and the diffusion of impurities affecting the electronic characteristics of the grain boundary, all the processing temperatures during FET fabrication were held below 150 deg. C. From the grain boundary, the field-effect mobility was measured at around 21.4 cm{sup 2}/Vs at 297 K, and the temperature dependence of the field-effect mobility suggested the presence of a potential barrier of 0.22 eV at the boundary. The technique presented here is applicable for the monitoring of carrier conduction characteristics at the grain boundary in poly Si used for the production of solar cells.

Hashimoto, Masaki; Kanomata, Kensaku; Momiyama, Katsuaki; Kubota, Shigeru; Hirose, Fumihiko

2012-01-09T23:59:59.000Z

34

Dry etching of a device quality high-k GaxGdyOz gate oxide in CH4/H2-O2 chemistry for the fabrication of III-V MOSFETs  

Science Conference Proceedings (OSTI)

This paper investigates the reactive ion etching of Ga"xGd"yO"z, a device quality high-k gate oxide for the fabrication of III-V metal-oxide-semiconductor field-effect-transistors (MOSFETs) based on high mobility channel device layer structures. The ... Keywords: Compound semiconductor, Dry etching, Ga2O3(Gd2O3) RIE, GaxGdyOz, III-V MOSFET

X. Li; H. Zhou; R. J. W. Hill; C. D. W. Wilkinson; I. G. Thayne

2007-05-01T23:59:59.000Z

35

Accelerated Publication: Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO2 as a gate dielectric  

Science Conference Proceedings (OSTI)

Accumulation-type GaN metal-oxide-semiconductor field-effect-transistors (MOSFET's) with atomic-layer-deposited HfO"2 gate dielectrics have been fabricated; a 4@mm gate-length device with a gate dielectric of 14.8nm in thickness (an equivalent SiO"2 ... Keywords: Atomic layer deposition (ALD), Current collapse, GaN, HfO2, Metal-oxide-semiconductor field-effect-transistor (MOSFET)

Y. C. Chang; W. H. Chang; Y. H. Chang; J. Kwo; Y. S. Lin; S. H. Hsu; J. M. Hong; C. C. Tsai; M. Hong

2010-11-01T23:59:59.000Z

36

Self?aligned high electron mobility transistor gate fabrication using focused ion beams  

Science Conference Proceedings (OSTI)

A new gate fabrication technique has been developed based on focused ion beam exposure and reactive ion etching of a polymethylmethacrylate (PMMA)/Ge/PMMA multilevel resist structure. The focused ion beam exposes the thin PMMA imaging layer that is transferred directly to the germanium layer using reactive ion etching (RIE). The underlying resist is etched first in oxygen at high pressure

G. M. Atkinson; R. L. Kubena; L. E. Larson; L. D. Nguyen; F. P. Stratton; L. M. Jelloian; M. V. Le; H. McNulty

1991-01-01T23:59:59.000Z

37

Comparison of dc performance of Pt/Ti/Au- and Ni/Au-Gated AlGaN/GaN High Electron Mobility Transistors  

Science Conference Proceedings (OSTI)

We have demonstrated significant improvements of AlGaN/GaN High Electron Mobility Transistors (HEMTs) dc performance by employing Pt/Ti/Au instead of the conventional Ni/Au gate metallization. During off-state bias stressing, the typical critical voltage for HEMTs with Ni/Au gate metallization was ~ -45 to -65V. By sharp contrast, no critical voltage was observed for HEMTs with Pt/Ti/Au gate metallization, even up to -100V, which was the instrumental limitation in this experiment. After the off-state stressing, the drain current of Ni/Au gated-HEMTs decreased by~ 15%. For the Pt-gate HEMTs, no degradation of the drain current occurred and there were minimal changes in the Schottky gate characteristics for both forward and reverse bias conditions. The HEMTs with Pt/Ti/Au metallization showed an excellent drain on/off current ratio of 1.5 108. The on/off drain current ratio of Ni-gated HEMTs was dependent on the drain bias voltage and ranged from 1.2 107 at Vds=5V and 6 105

Liu, L. [University of Florida, Gainesville; Lo, C. F. [University of Florida; Kang, Tsung Sheng [University of Florida, Gainesville; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL; Laboutin, O. [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Ren, F. [University of Florida

2011-01-01T23:59:59.000Z

38

Work function control at metal high-dielectric-constant gate oxide interfaces  

Science Conference Proceedings (OSTI)

There has been difficulty in finding metals of sufficiently large or small effective work function to act as metal electrodes on high-dielectric-constant gate oxides. To understand the factors affecting the effective work function, we have calculated ... Keywords: High K oxides, Metal gates

K. Tse; J. Robertson

2008-01-01T23:59:59.000Z

39

HRTEM image simulations for the study of ultra-thin gate oxides  

SciTech Connect

We have performed high resolution transmission electron microscope (HRTEM) image simulations to qualitatively assess the visibility of various structural defects in ultra-thin gate oxides of MOSFET devices, and to quantitatively examine the accuracy of HRTEM in performing gate oxide metrology. Structural models contained crystalline defects embedded in an amorphous 16 {angstrom}-thick gate oxide. Simulated images were calculated for structures viewed in cross-section. Defect visibility was assessed as a function of specimen thickness and defect morphology, composition, size and orientation. Defect morphologies included asperities lying on the substrate surface, as well as ''bridging'' defects connecting the substrate to the gate electrode. Measurements of gate oxide thickness extracted from simulated images were compared to actual dimensions in the model structure to assess TEM accuracy for metrology. The effects of specimen tilt, specimen thickness, objective lens defocus and coefficient of spherical aberration (C{sub s}) on measurement accuracy were explored for nominal 10{angstrom} gate oxide thickness. Results from this work suggest that accurate metrology of ultra-thin gate oxides (i.e. limited to several per cent error) is feasible on a consistent basis only by using a C{sub s}-corrected microscope. However, fundamental limitations remain for characterizing defects in gate oxides using HRTEM, even with the new generation of C{sub s}-corrected microscopes.

Taylor, Seth T.; Mardinly, John; O'Keefe, Michael A.

2001-07-17T23:59:59.000Z

40

Radiation-hardened transistor and integrated circuit  

DOE Patents (OSTI)

A composite transistor is disclosed for use in radiation hardening a CMOS IC formed on an SOI or bulk semiconductor substrate. The composite transistor has a circuit transistor and a blocking transistor connected in series with a common gate connection. A body terminal of the blocking transistor is connected only to a source terminal thereof, and to no other connection point. The blocking transistor acts to prevent a single-event transient (SET) occurring in the circuit transistor from being coupled outside the composite transistor. Similarly, when a SET occurs in the blocking transistor, the circuit transistor prevents the SET from being coupled outside the composite transistor. N-type and P-type composite transistors can be used for each and every transistor in the CMOS IC to radiation harden the IC, and can be used to form inverters and transmission gates which are the building blocks of CMOS ICs.

Ma, Kwok K. (Albuquerque, NM)

2007-11-20T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Impact of elliptical cross-section on the propagation delay of multi-channel gate-all-around MOSFET based inverters  

Science Conference Proceedings (OSTI)

Multi-channel (MC) gate-all-around (GAA) metal-oxide-semiconductor field-effect transistor (MOSFET) is one of the promising candidates for the next-generation high performance devices. However, due to fabrication imperfections the cross-section of GAA ... Keywords: Effective diameter, Gate-all-around (GAA), Metal-oxide-semiconductor field-effect transistor (MOSFET), Multi-channel, Propagation delay, Scaling

Subindu Kumar, Shankaranand Jha

2013-09-01T23:59:59.000Z

42

Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices  

Science Conference Proceedings (OSTI)

We present the real-time x-ray irradiation response of charge and pH sensitive solution gate AlGaN/GaN high electron mobility transistors. The devices show stable and reproducible behavior under and following x-ray radiation, including a linear integrated response with dose into the muGy range. Titration measurements of devices in solution reveal that the linear pH response and sensitivity are not only retained under x-ray irradiation, but an irradiation response could also be measured. Since the devices are biocompatible, and can be simultaneously operated in aggressive fluids and under hard radiation, they are well-suited for both medical radiation dosimetry and biosensing applications.

Hofstetter, Markus; Funk, Maren; Paretzke, Herwig G.; Thalhammer, Stefan [Helmholtz Zentrum Muenchen, Ingolstaedter Landstrasse 1, 85764 Neuherberg (Germany); Howgate, John; Sharp, Ian D.; Stutzmann, Martin [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching (Germany)

2010-03-01T23:59:59.000Z

43

Ti-Doped Indium Tin Oxide Thin Films for Transparent Field-Effect Transistors: Control of Charge-Carrier Density and Crystalline Structure  

Science Conference Proceedings (OSTI)

Indium tin oxide (ITO) films are representative transparent conducting oxide media for organic light-emitting diodes, liquid crystal displays, and solar cell applications. Extending the utility of ITO films from passive electrodes to active channel layers in transparent field-effect transistors (FETs), however, has been largely limited because of the materials' high carrier density (>1 x 10{sup 20} cm{sup 03}), wide band gap, and polycrystalline structure. Here, we demonstrate that control over the cation composition in ITO-based oxide films via solid doping of titanium (Ti) can optimize the carrier concentration and suppress film crystallization. On 120 nm thick SiO{sub 2}/Mo (200 nm)/glass substrates, transparent n-type FETs prepared with 4 at % Ti-doped ITO films and fabricated via the cosputtering of ITO and TiO{sub 2} exhibited high electron mobilities of 13.4 cm{sup 2} V{sup -1} s{sup -1}, a low subthreshold gate swing of 0.25 V decade{sup -1}, and a high I{sub on}/I{sub off} ratio of >1 x 10{sup 8}.

J Kim; K Ji; M Jang; H Yang; R Choi; J Jeong

2011-12-31T23:59:59.000Z

44

Electrical and physical characteristics of HfLaON-gated metal-oxide-semiconductor capacitors with various nitrogen concentration profiles  

Science Conference Proceedings (OSTI)

The comparative studies of electrical and physical characteristics of HfLaON-gated metal-oxide-semiconductor (MOS) capacitors with various nitrogen concentration profiles (NCPs) were investigated. Various NCPs in HfLaON gate dielectrics were adjusted ... Keywords: Charge trapping, Current-conduction, High-k dielectric, Metal-oxide-semiconductor (MOS), Nitrogen concentration profiles (NCPs)

Chin-Lung Cheng; Jeng-Haur Horng; Hung-Yang Tsai

2011-02-01T23:59:59.000Z

45

Impact of SF{sub 6} plasma treatment on performance of TaN-HfO{sub 2}-InP metal-oxide-semiconductor field-effect transistor  

SciTech Connect

In this work, the experimental impact of SF{sub 6} plasma treatment on the performance of InP metal-oxide-semiconductor field-effect transistors is presented. S and F are incorporated into atomic layer deposited HfO{sub 2} via postgate SF{sub 6} plasma treatment. The decreased subthreshold swing, gate leakage (I{sub g}), and increased effective channel mobility ({mu}{sub eff}) indicate that better interface and bulk oxide quality have been achieved with SF{sub 6} plasma treatment due to the formation of stronger Hf-F bonds. Drive current (I{sub d}), transconductance (G{sub m}), and effective channel mobility ({mu}{sub eff}) are improved by 22.3%, 35%, and 35%, respectively, compared with those of control devices.

Wang Yanzhen; Chen Yenting; Zhao Han; Xue Fei; Zhou Fei; Lee, Jack C. [Department of Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78758 (United States)

2011-01-24T23:59:59.000Z

46

Novel attributes in scaling issues of carbon nanotube field-effect transistors  

Science Conference Proceedings (OSTI)

For the first time, we present a scaling study of carbon nanotube field-effect transistors (CNTFETs) using a two-dimensional model. We investigate the scaling issues in device performance focusing on transconductance characteristics, output characteristics, ... Keywords: CNTFET, Capacitance model, Carbon nanotube diameter, Gate oxide thickness

Zahra Arefinia; Ali A. Orouji

2009-01-01T23:59:59.000Z

47

Application of group electronegativity concepts to the effective work functions of metal gate electrodes on high- ? gate oxides  

Science Conference Proceedings (OSTI)

The empirical relationship between electronegativity and effective work function is applied to a diverse set of multi-element electrode materials on hafnium dioxide (HfO"2) gate dielectrics. To accommodate the multi-element nature of metal gate electrodes ... Keywords: Effective work function, Electronegativity, Hafnium dioxide, Metal gate electrode

J. K. Schaeffer; D. C. Gilmer; C. Capasso; S. Kalpat; B. Taylor; M. V. Raymond; D. Triyoso; R. Hegde; S. B. Samavedam; B. E. White, Jr

2007-09-01T23:59:59.000Z

48

NBTI-aware power gating design  

Science Conference Proceedings (OSTI)

A header-based power gating structure inserts PMOS as sleep transistors between the power rail and the circuit. Since PMOS sleep transistors in the functional mode are turned-on continuously, Negative Bias Temperature Instability (NBTI) influences the ...

Ming-Chao Lee; Yu-Guang Chen; Ding-Kei Huang; Shih-Chieh Chang

2011-01-01T23:59:59.000Z

49

ESS 2012 Peer Review - Engineered Gate Oxides for Wide Bandgap Semiconductor MOSFETs - Jon Ihlefeld, SNL  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

-5 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 -6 -4 -2 0 2 4 6 8 10 |J Leakage | (A-cm -2 ) Semiconductor Voltage (V) Engineered Gate Oxides for Wide Bandgap S emiconductor M OSFETs* Jon I hlefeld, M ichael B rumbach, S andeepan D asGupta, and Stanley AtciEy Sandia NaGonal Laboratories *Sponsored b y t he U .S. D epartment o f E nergy's O ffice o f E lectricity E nergy S torage Systems P rogram jihlefe@sandia.gov, 505---844---3162; s atciE@sandia.gov, 505---284---2701 Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. SAND No. 2011-XXXXP Cooling Power electronics Energy storage Energy storage -V gate Low defect oxide Metal gate Wide

50

Organic thin film transistors with double insulator layers  

Science Conference Proceedings (OSTI)

We have investigated a double-layer structured gate dielectric for the organic thin films transistor (OTFT) with the purpose of improving the performance of the SiO"2 gate insulator. A 50nm PMMA layer was coated on top of the SiO"2 gate insulator as ... Keywords: Mobility, On/off ratio, Organic thin film transistor, PMMA

X. Liu; Y. Bai; L. Chen; F. X. Wei; X. B. Zhang; X. Y. Jiang; Zh. L. Zhang

2007-08-01T23:59:59.000Z

51

Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Si???xGex/Si virtual substrates  

E-Print Network (OSTI)

We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si??.??Ge??.?? virtual substrates. The poor interface between silicon dioxide (SiO??) and the Ge channel ...

Lee, Minjoo L.

52

Toward Active-Matrix Lab-On-A-Chip: Programmable Electrofluidic control Enaled by Arrayed Oxide Thin Film Transistors  

SciTech Connect

Agile micro- and nano-fluidic control is critical to numerous life science and chemical science synthesis as well as kinetic and thermodynamic studies. To this end, we have demonstrated the use of thin film transistor arrays as an active matrix addressing method to control an electrofluidic array. Because the active matrix method minimizes the number of control lines necessary (m + n lines for the m x n element array), the active matrix addressing method integrated with an electrofluidic platform can be a significant breakthrough for complex electrofluidic arrays (increased size or resolution) with enhanced function, agility and programmability. An amorphous indium gallium zinc oxide (a-IGZO) semiconductor active layer is used because of its high mobility of 1-15 cm{sup 2} V{sup -1} s{sup -1}, low-temperature processing and transparency for potential spectroscopy and imaging. Several electrofluidic functionalities are demonstrated using a simple 2 x 5 electrode array connected to a 2 x 5 IGZO thin film transistor array with the semiconductor channel width of 50 {mu}m and mobility of 6.3 cm{sup 2} V{sup -1} s{sup -1}. Additionally, using the TFT device characteristics, active matrix addressing schemes are discussed as the geometry of the electrode array can be tailored to act as a storage capacitor element. Finally, requisite material and device parameters are discussed in context with a VGA scale active matrix addressed electrofluidic platform.

Noh, Joo Hyon [University of Tennessee, Knoxville (UTK); Noh, Jiyong [University of Tennessee, Knoxville (UTK); Kreit, Eric [University of Cincinnati; Heikenfeld, Jason [University of Cincinnati; Rack, Philip D [ORNL

2012-01-01T23:59:59.000Z

53

Enhanced stability against bias-stress of metal-oxide thin film transistors deposited at elevated temperatures  

SciTech Connect

Transparent zinc-tin-oxide (ZTO) thin film transistors (TFTs) have been prepared by DC magnetron sputtering. Compared to reference devices with a channel deposited at room temperature and subsequently annealing at 400 deg. C, a substantially enhanced stability against bias stress is evidenced for devices with in-situ substrate heating during deposition (400 deg. C). A reduced density of sub-gap defect states in TFT channels prepared with in-situ substrate heating is found. Concomitantly, a reduced sensitivity to the adsorption of ambient gases is evidenced for the in-situ heated devices. This finding is of particular importance for an application as driver electronics for organic light emitting diode displays.

Fakhri, M.; Goerrn, P.; Riedl, T. [Institute of Electronic Devices, University of Wuppertal, Rainer-Gruenter-St. 21, 42119 Wuppertal (Germany); Weimann, T.; Hinze, P. [Physikalisch-Technische Bundesanstalt Braunschweig, Bundesallee 100, 38116 Braunschweig (Germany)

2011-09-19T23:59:59.000Z

54

Method for double-sided processing of thin film transistors  

DOE Patents (OSTI)

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Yuan, Hao-Chih (Madison, WI); Wang, Guogong (Madison, WI); Eriksson, Mark A. (Madison, WI); Evans, Paul G. (Madison, WI); Lagally, Max G. (Madison, WI); Ma, Zhenqiang (Middleton, WI)

2008-04-08T23:59:59.000Z

55

Some issues in advanced CMOS gate stack performance and reliability  

Science Conference Proceedings (OSTI)

This paper summarizes and analyzes some of our previous works on the advanced gate stacks for CMOS transistors focused on the following two topics: 1. Frequency dependence of Dynamic Bias Temperature Instability (DBTI) and the transistor degradation ... Keywords: CMOS, Gate Stack, Reliability

Ming-Fu Li; X. P. Wang; C. Shen; J. J. Yang; J. D. Chen; H. Y. Yu; Chunxiang Zhu; Daming Huang

2011-12-01T23:59:59.000Z

56

Gate potential control of nanofluidic devices  

E-Print Network (OSTI)

The effect of an external gate potential control on the nanofluidic nanochannels was experimentally investigated in this work. Like in the field effect transistors (FET) in microelectronics, molecular transport in ...

Le Coguic, Arnaud

2005-01-01T23:59:59.000Z

57

Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation  

Science Conference Proceedings (OSTI)

In situ steam generated (ISSG) oxides have recently attracted interest for use as gate dielectrics because of their demonstrated reliability improvement over oxides formed by dry oxidation. [G. Minor, G. Xing, H. S. Joo, E. Sanchez, Y. Yokota, C. Chen, D. Lopes, and A. Balakrishna, Electrochem. Soc. Symp. Proc. 99-10, 3 (1999); T. Y. Luo, H. N. Al-Shareef, G. A. Brown, M. Laughery, V. Watt, A. Karamcheti, M. D. Jackson, and H. R. Huff, Proc. SPIE 4181, 220 (2000).] We show in this letter that nitridation of ISSG oxide using a remote plasma decreases the gate leakage current of ISSG oxide by an order of magnitude without significantly degrading transistor performance. In particular, it is shown that the peak normalized transconductance of n-channel devices with an ISSG oxide gate dielectric decreases by only 4% and the normalized drive current by only 3% after remote plasma nitridation (RPN). In addition, it is shown that the reliability of the ISSG oxide exhibits only a small degradation after RPN. These observations suggest that the ISSG/RPN process holds promise for gate dielectric applications. {copyright} 2001 American Institute of Physics.

Al-Shareef, H. N.; Karamcheti, A.; Luo, T. Y.; Bersuker, G.; Brown, G. A.; Murto, R. W.; Jackson, M. D.; Huff, H. R.; Kraus, P.; Lopes, D. (and others)

2001-06-11T23:59:59.000Z

58

Robust gate sizing by geometric programming  

Science Conference Proceedings (OSTI)

We present an efficient optimization scheme for gate sizing in the presence of process variations. Using a posynomial delay model, the delay constraints are modified to incorporate uncertainty in the transistor widths and effective channel lengths due ... Keywords: gate sizing, geometric program, optimization, posynomial, uncertainty ellipsoid

Jaskirat Singh; Vidyasagar Nookala; Zhi-Quan Luo; Sachin Sapatnekar

2005-06-01T23:59:59.000Z

59

Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiation  

SciTech Connect

Two components of the low-field current have been identified in thin oxides, following 10 KeV X-ray irradiation. The first component, observed in the direct tunneling region, can be removed by a 100 C anneal, and is also greatly suppressed if the irradiation is done in vacuum or in a nitrogen ambient, or if the oxide is preannealed before irradiation. The origin of this current is speculated to be related to adsorbed water molecules on the gate surface. The second component is observed to begin in the pre-Fowler-Nordheim tunneling (FNT) region and extends into the FNT region, only in oxides less than {approximately}8 nm thick, and persists even after several days of anneal at 300 C. This current exhibits a power law dependence on radiation dose. The origin of this second component is believed to be due to the trap-assisted tunneling via neutral electron traps, similar to the leakage current observed in the oxide after high-voltage stress.

Ling, C.H.; Ang, C.H.; Ang, D.S.

2000-03-01T23:59:59.000Z

60

F3, A Comparative Study of Thermal and Deposited Gate Oxides on ...  

Science Conference Proceedings (OSTI)

Thermal oxidation processes consisted of dry oxidation at 1175C followed by an .... Microstructure and Properties of Colloidal ITO Films and Cold-Sputtered ITO Films .... Graphene Produced from Ion Implanted Semi-Insulating Silicon Carbide.

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Gate-all-around silicon nanowire MOSFETs : top-down fabrication and transport enhancement techniques  

E-Print Network (OSTI)

Scaling MOSFETs beyond 15 nm gate lengths is extremely challenging using a planar device architecture due to the stringent criteria required for the transistor switching. The top-down fabricated, gate-all-around architecture ...

Hashemi, Pouya

2010-01-01T23:59:59.000Z

62

Accelerated Publication: Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric  

Science Conference Proceedings (OSTI)

Ga"2O"3(Gd"2O"3) [GGO] 3.5nm-thick, with an in situ Al"2O"3 cap 1.5nm thick, has been directly deposited on Ge substrate without employing interfacial passivation layers. The equivalent oxide thickness (EOT) of the gate stack is 1.38-nm. The metal-oxide-semiconductor ... Keywords: EOT, Germanium, High-? dielectric, MOS

L. K. Chu; T. H. Chiang; T. D. Lin; Y. J. Lee; R. L. Chu; J. Kwo; M. Hong

2012-03-01T23:59:59.000Z

63

Near-field thermal transistor  

E-Print Network (OSTI)

Using a block of three separated solid elements, a thermal source and drain together with a gate made of an insulator-metal transition material exchanging near-field thermal radiation, we introduce a nanoscale analog of a field-effect transistor which is able to control the flow of heat exchanged by evanescent thermal photons between two bodies. By changing the gate temperature around its critical value, the heat flux exchanged between the hot body (source) and the cold body (drain) can be reversibly switched, amplified, and modulated by a tiny action on the gate. Such a device could find important applications in the domain of nanoscale thermal management and it opens up new perspectives concerning the development of contactless thermal circuits intended for information processing using the photon current rather than the electric current.

Ben-Abdallah, Philippe

2013-01-01T23:59:59.000Z

64

Performance and reliability improvement of HfSiON gate dielectrics using chlorine plasma treatment  

Science Conference Proceedings (OSTI)

The effects of chlorine plasma treatment on HfSiON gate dielectrics were investigated with respect to device performance and reliability characteristics. The chlorine plasma treatment was performed on atomic layer deposited HfSiON films to remove the residual carbon content. The optimal chlorine plasma treatment is shown to lower gate leakage current density without increasing equivalent oxide thickness of the gate stack. Secondary ion mass spectroscopy depth profiling showed that the carbon residue in HfSiON was reduced by the chlorine plasma treatment. It is demonstrated that an optimized chlorine plasma treatment improves the transistor I{sub on}-I{sub off} characteristics and reduces negative-bias temperature instability.

Park, Hong Bae; Ju, Byongsun [Samsung Electronics R and D Center (Korea, Republic of); Kang, Chang Yong; Park, Chanro; Park, Chang Seo [SEMATECH, Austin, Texas 78741 (United States); Lee, Byoung Hun [Gwangju Institute of Science and Technology, Gwangju (Korea, Republic of); Kim, Tea Wan; Kim, Beom Seok; Choi, Rino [Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751 (Korea, Republic of)

2009-01-26T23:59:59.000Z

65

Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)  

SciTech Connect

Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

2008-10-31T23:59:59.000Z

66

Integration of pentacene-based thin film transistors via photolithography for low and high voltage applications  

E-Print Network (OSTI)

An organic thin film transistor (OTFT) technology platform has been developed for flexible integrated circuits applications. OTFT performance is tuned by engineering the dielectric constant of the gate insulator and the ...

Smith, Melissa Alyson

2012-01-01T23:59:59.000Z

67

Logic synthesis for low power using clock gating and rewiring  

Science Conference Proceedings (OSTI)

Traditionally, clock gating for power saving is mainly done at Register Transistor Level (RTL), while in a lower logical level some synthesis techniques, e.g. Observability Don't Care (ODC) can also be used to provide more power savings. In this paper, ... Keywords: clock gating, logic synthesis, low power

Tak-Kei Lam; Steve Yang; Wai-Chung Tang; Yu-Liang Wu

2010-05-01T23:59:59.000Z

68

Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices  

Science Conference Proceedings (OSTI)

A set of AlGaN/GaN high electron mobility transistor devices has been investigated using step-stress testing, and representative samples of undegraded, source-side-degraded, and drain-side-degraded devices were examined using electron microscopy and microanalysis. An unstressed reference sample was also examined. All tested devices and their corresponding transmission electron microscopy samples originated from the same wafer and thus received nominally identical processing. Step-stressing was performed on each device and the corresponding current voltage characteristics were generated. Degradation in electrical performance, specifically greatly increased gate leakage current, was shown to be correlated with the presence of crystal defects near the gate edges. However, the drain-side-degraded device showed a surface pit on the source side, and another region of the same device showed no evidence of damage. Moreover, significant metal diffusion into the barrier layer from the gate contacts was also observed, as well as thin amorphous oxide layers below the gate metal contacts, even in the unstressed sample. Overall, these observations emphasize that gate-edge defects provide only a partial explanation for device failure.

Johnson, Michael [Arizona State University; Cullen, David A [ORNL; Liu, Lu [University of Florida; Kang, Tsung Sheng [University of Florida, Gainesville; Ren, F. [University of Florida; Chang, C. Y. [University of Florida; Pearton, S. J. [University of Florida; Jang, Soohwan [University of Florida, Gainesville; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Smith, David J [Arizona State University

2012-01-01T23:59:59.000Z

69

Transistor sizing for large combinational digital CMOS circuits  

Science Conference Proceedings (OSTI)

This article describes a new method to determine the device sizes of combinational digital CMOS circuits for an upper limit on the signal propagation delays. By modeling gate delay and area or power consumption of a circuit as a simple analytical function ... Keywords: Transistor sizing, digital combinational CMOS circuits, timing optimization

Lucas S. Heusler; Wolfgang Fichtner

1991-01-01T23:59:59.000Z

70

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

We have investigated the surface morphology of electrically stressed AlGaN/GaN high electron mobility transistors using atomic force microscopy and scanning electron microscopy after removing the gate metallization by ...

Makaram, Prashanth

71

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors  

E-Print Network (OSTI)

We have found that there is a critical drain-to-gate voltage beyond which GaN high-electron mobility transistors start to degrade in electrical-stress experiments. The critical voltage depends on the detailed voltage biasing ...

Joh, Jungwoo

72

Detecting Lyme Disease Using Antibody-Functionalized Single-Walled Carbon Nanotube Transistors  

E-Print Network (OSTI)

We examined the potential of antibody-functionalized single-walled carbon nanotube (SWNT) field-effect transistors (FETs) for use as a fast and accurate sensor for a Lyme disease antigen. Biosensors were fabricated on oxidized silicon wafers using chemical vapor deposition grown carbon nanotubes that were functionalized using diazonium salts. Attachment of Borrelia burgdorferi (Lyme) flagellar antibodies to the nanotubes was verified by Atomic Force Microscopy and electronic measurements. A reproducible shift in the turn-off voltage of the semiconducting SWNT FETs was seen upon incubation with Borrelia burgdorferi flagellar antigen, indicative of the nanotube FET being locally gated by the residues of flagellar protein bound to the antibody. This sensor effectively detected antigen in buffer at concentrations as low as 1 ng/ml, and the response varied strongly over a concentration range coinciding with levels of clinical interest. Generalizable binding chemistry gives this biosensing platform the potential to...

Lerner, Mitchell B; Goldsmith, Brett R; Brisson, Dustin; Johnson, A T Charlie

2013-01-01T23:59:59.000Z

73

Process damage-free damascene metal gate technology for gentle integration of epitaxially grown high-k  

Science Conference Proceedings (OSTI)

This paper presents the first successful attempt to integrate crystalline high-k gate dielectrics into a virtually damage-free damascene metal gate process. Process details as well as initial electrical characterization results on fully functional gate ... Keywords: CMP, Crystalline high-k gate dielectric, Damascene metal gate, Gadolinium oxide, Rare-earth oxide

Ralf Endres; Yordan Stefanov; Frank Wessely; Florian Zaunert; Udo Schwalke

2008-01-01T23:59:59.000Z

74

David Gates home page  

NLE Websites -- All DOE Office Websites (Extended Search)

Gates home page http:www.pppl.gov%7EdgatesSiteDr.DavidA.Gates.html (1 of 4) 8302012 9:47:58 AM David Gates home page Dr. David A. Gates Princeton Plasma Physics...

75

Scanning gate microscopy on graphene: charge inhomogeneity and extrinsic doping This article has been downloaded from IOPscience. Please scroll down to see the full text article.  

E-Print Network (OSTI)

mode tip and local top gate. Electrical transport through graphene at various back gate voltages is monitored as a function of tip voltage and tip position. Near the Dirac point, the response of graphene, USA. graphene field effect transistor (GFET), a voltage applied to a gate (capacitively coupled

Chen, Yong P.

76

Printed inorganic transistors  

E-Print Network (OSTI)

Forty years of exponential growth of semiconductor technology have been predicated on the miniaturization of the transistors that comprise integrated circuits. While complexity has greatly increased within a given area of ...

Ridley, Brent (Brent Alan), 1974-

2003-01-01T23:59:59.000Z

77

Method for formation of thin film transistors on plastic substrates  

DOE Patents (OSTI)

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

1998-10-06T23:59:59.000Z

78

Dynamic and short-circuit power of CMOS gates driving lossless transmission lines  

E-Print Network (OSTI)

AbstractThe dynamic and short-circuit power consumption of a complementary metaloxidesemidconductor (CMOS) gate driving an inductancecapacitance (LC) transmission line as a limiting case of an RLC transmission line is investigated in this paper. Closed-form solutions for the output voltage and shortcircuit power of a CMOS gate driving an LC transmission line are presented. A closed form solution for the short-circuit power is also presented. These solutions agree with circuit simulations within 11 % error for a wide range of transistor widths and line impedances for a 0.25-"m CMOS technology. The ratio of the short circuit to dynamic power is shown to be less than 7 % for CMOS gates driving LC transmission lines where the line is matched or underdriven. The total power consumption is expected to decrease as inductance effects becomes more significant as compared to a resistancecapacitance (RC)-dominated interconnect line. Index TermsCMOS, dynamic, interconnect, LC, power dissipation, RC, RLC, short-circuit, transmission lines.

Yehea I. Ismail; Eby G. Friedman; Senior Member; Jose Luis Neves

1999-01-01T23:59:59.000Z

79

FLOW GATING  

DOE Patents (OSTI)

BS>This invention is a fast gating system for eiectronic flipflop circuits. Diodes connect the output of one circuit to the input of another, and the voltage supply for the receiving flip-flop has two alternate levels. When the supply is at its upper level, no current can flow through the diodes, but when the supply is at its lower level, current can flow to set the receiving flip- flop to the same state as that of the circuit to which it is connected. (AEC)

Poppelbaum, W.J.

1962-12-01T23:59:59.000Z

80

East Gate  

NLE Websites -- All DOE Office Websites (Extended Search)

East East Gate to: Rt. 59 Fermilab Village Main Entrance B u tt e r fi e ld R d . to: Farnsworth Ave, I-88 Kirk Rd. Site 56 Site 55 Buffalo Farm Lederman Science Center (Public Welcome) Prairie Trails Dog Training Area Nature Area Lake Law A.E. Sea Technical Division Illinois Accelerator Research Center Feynman Computing Center Muon Delivery Ring Main Injector Tevatron Test Accelerators Site 37 Site 39 Site 38 Neutrino Experiments Silicon Detector Facility Test Beam Facility DAB Site 50 Wilson Hall & Ramsey Auditorium (Public Welcome) Wilson St. Gate (Deliveries, Employees) NML CMTF A 1 R D D R D B RD S E O LA R D B A T A V I A R D E WILSON ST WILSON ST P IN E S T P O W E R L I N E R D N E O LA R D MCCHESNEY RD A B C D E 5 4 3 2 1 ´ 0 0.5 1 0.25 Miles Trails Public Areas Buildings Roads/Parking Ponds Fermi National Accelerator Laboratory 2013 Fermilab Site Map

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks  

Science Conference Proceedings (OSTI)

The contribution from a relatively low-K SiON (K~6) interfacial transition region (ITR) between Si and transition metal high-K gate dielectrics such as nanocrystalline HfO"2 (K~20), and non-crystalline Hf Si oxynitride (K~10-12) places a significant ... Keywords: Di-vacancy defects, Ge substrates, High-K gate dielectrics, Interfacial transition regions, MOS devices, Native Ge dielectrics, Spectroscopic ellipsometry, X-ray absorption spectroscopy

G. Lucovsky; S. Lee; J. P. Long; H. Seo; J. Lning

2009-03-01T23:59:59.000Z

82

The J-K Gate  

Science Conference Proceedings (OSTI)

For many years two-input NAND, AND, NOR, OR and EX-OR gates have been commercially available as cheap quad TTL integrated circuits (IC's). Ideas on quad programmable two-input gates (three inputs per gate) have been published in the literature but have ... Keywords: Digital circuit design, EX-OR gate, inverter, J-K gate, latch, logic circuit, NAND gate, NIMP gate, OR gate, programmable gate circuit, standard gate, zero/one-true/complement element.

R. M. M. Oberman

1976-11-01T23:59:59.000Z

83

TRANSISTOR HIGH VOLTAGE POWER SUPPLY  

DOE Patents (OSTI)

High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

Driver, G.E.

1958-07-15T23:59:59.000Z

84

Gate Coupling and Charge Distribution in Nanowire Field Effect Transistors  

E-Print Network (OSTI)

York, 1981. (9) Ilani, S.; Donev, L. A. K.; Kindermann, M.; McEuen, P. L. Nat. Phys. 2006, 2, 687. (10

Wu, Junqiao

85

Semi-analytical modeling of Ag and Au nanoparticles and fullerene (C60) embedded gate oxide compound semiconductor MOSFET memory devices  

Science Conference Proceedings (OSTI)

In this paper we present an analytical simulation study of Non-volatile MOSFET memory devices with Ag/Au nanoparticles/fullerene (C60) embedded gate dielectric stacks. We considered a long channel planar MOSFET, having a multilayer SiO2---HfO2 ... Keywords: Ag nanocrystal, Au nanocrystal, C60, Long channel MOSFET, Non-volatile memory

Amretashis Sengupta; Chandan Kumar Sarkar; Felix G. Requejo

2012-12-01T23:59:59.000Z

86

Physical-aware simulated annealing optimization of gate leakage in nanoscale datapath circuits  

Science Conference Proceedings (OSTI)

For CMOS technologies below 65nm, gate oxide direct tunneling current is a major component of the total power dissipation. This paper presents a simulated annealing based algorithm for the gate leakage current reduction by simultaneous scheduling, allocation ...

Saraju P. Mohanty; Ramakrishna Velagapudi; Elias Kougianos

2006-03-01T23:59:59.000Z

87

Analyzing the distribution of threshold voltage degradation in nanoscale transistors by using reaction-diffusion and percolation theory  

Science Conference Proceedings (OSTI)

Continued scaling of transistors into the nanoscale regime has led to large device-to-device variation in transistor characteristics. These variations reflect differences in substrate doping, channel length, interface and/or oxide defects, etc. among ... Keywords: Exponential distribution, Interface defect statistics, Markov Chain Monte-Carlo, Reaction-diffusion model, Skew-normal distribution, Threshold voltage degradation

Ahmad Ehteshamul Islam; Muhammad Ashraful Alam

2011-12-01T23:59:59.000Z

88

REGENERATIVE TRANSISTOR AMPLIFIER  

DOE Patents (OSTI)

Electrical circults for use in computers and the like are described. particularly a regenerative bistable transistor amplifler which is iurned on by a clock signal when an information signal permits and is turned off by the clock signal. The amplifier porforms the above function with reduced power requirements for the clock signal and circuit operation. The power requirements are reduced in one way by employing transformer coupling which increases the collector circuit efficiency by eliminating the loss of power in the collector load resistor.

Kabell, L.J.

1958-11-25T23:59:59.000Z

89

NIST Engineers Discover Fundamental Flaw in Transistor ...  

Science Conference Proceedings (OSTI)

NIST Engineers Discover Fundamental Flaw in Transistor Noise Theory. For Immediate Release: May 20, 2009. ...

2012-11-02T23:59:59.000Z

90

The effect of interfacial layer properties on the performance of Hf-based gate stack devices  

E-Print Network (OSTI)

-k-induced oxygen deficiency in the IL consistent with the electrical data. It is concluded that high temperature. © 2006 American Institute of Physics. DOI: 10.1063/1.2362905 I. INTRODUCTION To sustain the historical rate of transistor scaling, the conventional SiO2 gate dielectric layer must be replaced

Pennycook, Steve

91

Gated strip proportional detector  

DOE Patents (OSTI)

A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10/sup 6/. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

Morris, C.L.; Idzorek, G.C.; Atencio, L.G.

1985-02-19T23:59:59.000Z

92

Gated strip proportional detector  

DOE Patents (OSTI)

A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10.sup.6. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

Morris, Christopher L. (Los Alamos, NM); Idzorek, George C. (Los Alamos, NM); Atencio, Leroy G. (Espanola, NM)

1987-01-01T23:59:59.000Z

93

Double Barrier Resonant Tunneling Transistor with a Fully Two Dimensional Emitter  

SciTech Connect

A novel planar resonant tunneling transistor is demonstrated. The growth structure is similar to that of a double-barrier resonant tunneling diode (RTD), except for a fully two-dimensional (2D) emitter formed by a quantum well. Current is fed laterally into the emitter, and the 2D--2D resonant tunneling current is controlled by a surface gate. This unique device structure achieves figures-of-merit, i.e. peak current densities and peak voltages, approaching that of state-of-the-art RTDs. Most importantly, sensitive control of the peak current and voltage is achieved by gating of the emitter quantum well subband energy. This quantum tunneling transistor shows exceptional promise for ultra-high speed and multifunctional operation at room temperature.

MOON,J.S.; SIMMONS,JERRY A.; RENO,JOHN L.; BACA,WES E.; BLOUNT,MARK A.; HIETALA,VINCENT M.; JONES,ERIC D.

2000-07-13T23:59:59.000Z

94

SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator  

Science Conference Proceedings (OSTI)

In this paper, we compare the electrical characteristics of MOS capacitors and lateral MOSFETs with oxidized Ta"2Si (O-Ta"2Si) as a high-k dielectric on silicon carbide or stacked on thermally grown SiO"2 on SiC. MOS capacitors are used to determine ... Keywords: High-k dielectric, MOSFET, Oxidation, SiC, Ta2Si, Tantalum silicide

A. Prez-Toms; M. R. Jennings; P. M. Gammon; G. J. Roberts; P. A. Mawby; J. Milln; P. Godignon; J. Montserrat; N. Mestres

2008-04-01T23:59:59.000Z

95

Electrical artificial skin using ultraflexible organic transistor  

Science Conference Proceedings (OSTI)

We demonstrate ultrathin, ultraflexible, large-area pressure sensors based on an organic transistor integrated circuit. A 10-?m-thick plastic film with an organic transistor active matrix is developed that can be bent to a bending radius of less than ... Keywords: active matrix, flexible sensor, organic transistor

Tsuyoshi Sekitani, Tomoyuki Yokota, Makoto Takamiya, Takayasu Sakurai, Takao Someya

2013-05-01T23:59:59.000Z

96

SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications  

E-Print Network (OSTI)

. Nanocrystalline indium oxide-doped tin oxide thin film as low temperature hydrogen sensor. Sensors and Actuators B Available online 1 May 2012 Keywords: Hydrogen sensor High electron mobility transistors (HEMT) Tin oxide rights reserved. 1. Introduction Hydrogen is a clean, renewable, and sustainable energy carrier

Florida, University of

97

Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene  

Science Conference Proceedings (OSTI)

The electronic bandgap is an intrinsic property of semiconductors and insulators that largely determines their transport and optical properties. As such, it has a central role in modern device physics and technology and governs the operation of semiconductor devices such as p-n junctions, transistors, photodiodes and lasers. A tunable bandgap would be highly desirable because it would allow great flexibility in design and optimization of such devices, in particular if it could be tuned by applying a variable external electric field. However, in conventional materials, the bandgap is fixed by their crystalline structure, preventing such bandgap control. Here we demonstrate the realization of a widely tunable electronic bandgap in electrically gated bilayer graphene. Using a dual-gate bilayer graphene field-effect transistor (FET) and infrared microspectroscopy, we demonstrate a gate-controlled, continuously tunable bandgap of up to 250 meV. Our technique avoids uncontrolled chemical doping and provides direct evidence of a widely tunable bandgap -- spanning a spectral range from zero to mid-infrared -- that has eluded previous attempts. Combined with the remarkable electrical transport properties of such systems, this electrostatic bandgap control suggests novel nanoelectronic and nanophotonic device applications based on graphene.

Zhang, Yuanbo; Tang, Tsung-Ta; Girit, Caglar; Hao, Zhao; Martin, Michael C.; Zettl, Alex; Crommie, Michael F.; Shen, Y. Ron; Wang, Feng

2009-08-11T23:59:59.000Z

98

Optical NAND gate  

DOE Patents (OSTI)

An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Skogen, Erik J. (Albuquerque, NM); Raring, James (Goleta, CA); Tauke-Pedretti, Anna (Albuquerque, NM)

2011-08-09T23:59:59.000Z

99

Proposal for a Datta-Das transistor in the quantum Hall regime  

E-Print Network (OSTI)

We propose a resonant spin-field-effect transistor for chiral spin-resolved edge states in the integer quantum Hall effect with Rashba spin-orbit interaction. It employs a periodic array of voltage-controlled top gates that locally modulate the Rashba spin-orbit interaction. Strong resonant spin-field effect is achieved when the array periodicity matches the inverse of the wave-vector difference of the two chiral states involved. Well-known techniques of separately contacting the edge states make it possible to selectively populate and read out the edge states, allowing full spin readout. The resonant nature of the spin-field effect and the adiabatic character of the edge states guarantee a high degree of robustness with respect to disorder. Our device represents the quantum Hall version of the all-electrical Datta-Das spin-field effect transistor.

Luca Chirolli; D. Venturelli; F. Taddei; Rosario Fazio; V. Giovannetti

2011-11-02T23:59:59.000Z

100

High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel: Combinatorial approach  

SciTech Connect

Thin film transistors with a channel of Zn-In-Sn-O were fabricated via a combinatorial rf sputtering method. It was found that the role of the In atoms is to enhance the mobility and to shift the threshold voltage (V{sub th}) negatively. On the other hand, the Sn fraction is critical for improving the overall trap density including the density-of-states of the bulk channel layer and the interfacial trap density at the ZnInSnO interface. The optimized transistor was obtained at a compositional ratio of Zn:In:Sn=40:20:40, which exhibited an excellent subthreshold gate swing of 0.12 V/decade, V{sub th} of -0.4 V, and high I{sub on/off} ratio of >10{sup 9} as well as a high field-effect mobility of 24.6 cm{sup 2}/V s.

Ryu, Min Ki; Yang, Shinhyuk; Park, Sang-Hee Ko; Hwang, Chi-Sun [Transparent Electronics Team, ETRI, Daejeon 305-700 (Korea, Republic of); Jeong, Jae Kyeong [Department of Materials Science and Engineering, Inha University, 253 Yonghyun-Dong, Nam-Gu, Incheon 402-751 (Korea, Republic of)

2009-08-17T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al[subscript 2]O[subscript 3] Passivation  

E-Print Network (OSTI)

We studied submicrometer (L[subscript G] = 0.15-0.25 ¿m) gate-recessed InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-nm Al[subscript 2]O[subscript 3] passivation. The combination of ...

Guo, Shiping

102

Text Processing with GATE  

Science Conference Proceedings (OSTI)

GATE is a free open-source infrastructure for developing and deploying software components that process human language. It is more than 15 years old and is in active use for all types of computational tasks involving language (frequently called natural ...

Hamish Cunningham; Diana Maynard; Kalina Bontcheva

2011-04-01T23:59:59.000Z

103

Silicon field-effect transistors as radiation detectors for the Sub-THz range  

SciTech Connect

The nonresonance response of silicon metal-oxide-semiconductor field-effect transistors (Si-MOSFETs) with a long channel (1-20 {mu}m) to radiation in the frequency range 43-135 GHz is studied. The transistors are fabricated by the standard CMOS technology with 1-{mu}m design rules. The volt-watt sensitivity and the noise equivalent power (NEP) for such detectors are estimated with the calculated effective area of the detecting element taken into account. It is shown that such transistors can operate at room temperature as broadband direct detectors of sub-THz radiation. In the 4-5 mm range of wavelengths, the volt-watt sensitivity can be as high as tens of kV/W and the NEP can amount to 10{sup -11} - 10{sup -12}W/{radical}Hz . The parameters of detectors under study can be improved by the optimization of planar antennas.

But, D. B., E-mail: but.dmitry@gmail.com; Golenkov, O. G.; Sakhno, N. V.; Sizov, F. F.; Korinets, S. V.; Gumenjuk-Sichevska, J. V.; Reva, V. P.; Bunchuk, S. G. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)

2012-05-15T23:59:59.000Z

104

Dual-K Versus Dual-T Technique for Gate Leakage Reduction: A Comparative Perspective  

Science Conference Proceedings (OSTI)

As a result of aggressive technology scaling, gate leakage (gate oxide direct tunneling) has become a major component of total power dissipation. Use of dielectrics of higher permittivity (Dual-K) or use of silicon dioxide of higher thicknesses (Dual-T ...

Saraju P. Mohanty; Ramakrishna Velagapudi; Elias Kougianos

2006-03-01T23:59:59.000Z

105

Final Report on LDRD Project: Development of Quantum Tunneling Transistors for Practical Circuit Applications  

SciTech Connect

The goal of this LDRD was to engineer further improvements in a novel electron tunneling device, the double electron layer tunneling transistor (DELTT). The DELTT is a three terminal quantum device, which does not require lateral depletion or lateral confinement, but rather is entirely planar in configuration. The DELTT's operation is based on 2D-2D tunneling between two parallel 2D electron layers in a semiconductor double quantum well heterostructure. The only critical dimensions reside in the growth direction, thus taking full advantage of the single atomic layer resolution of existing semiconductor growth techniques such as molecular beam epitaxy. Despite these advances, the original DELTT design suffered from a number of performance short comings that would need to be overcome for practical applications. These included (i)a peak voltage too low ({approx}20 mV) to interface with conventional electronics and to be robust against environmental noise, (ii) a low peak current density, (iii) a relatively weak dependence of the peak voltage on applied gate voltage, and (iv) an operating temperature that, while fairly high, remained below room temperature. In this LDRD we designed and demonstrated an advanced resonant tunneling transistor that incorporates structural elements both of the DELTT and of conventional double barrier resonant tunneling diodes (RTDs). Specifically, the device is similar to the DELTT in that it is based on 2D-2D tunneling and is controlled by a surface gate, yet is also similar to the RTD in that it has a double barrier structure and a third collector region. Indeed, the device may be thought of either as an RTD with a gate-controlled, fully 2D emitter, or alternatively, as a ''3-layer DELTT,'' the name we have chosen for the device. This new resonant tunneling transistor retains the original DELTT advantages of a planar geometry and sharp 2D-2D tunneling characteristics, yet also overcomes the performance shortcomings of the original DELTT design. In particular, it exhibits the high peak voltages and current densities associated with conventional RTDs, allows sensitive control of the peak voltage by the control gate, and operates nearly at room temperature. Finally, we note under this LDRD we also investigated the use of three layer DELTT structures as long wavelength (Terahertz) detectors using photon-assisted tunneling. We have recently observed a narrowband (resonant) tunable photoresponse in related structures consisting of grating-gated double quantum wells, and report on that work here as well.

SIMMONS, JERRY A.; MOON, JUENG-SUN; BLOUNT, MARK; LYO, SUNGKWUN K.; BACA, WES E.; RENO, JOHN L.; LILLY, MICHAEL P.; WENDT, JOEL R.; WANKE, MICHAEL C.; PERALTA, X.G.; EISENSTEIN, J.P.; BURKE, P.J.

2002-07-01T23:59:59.000Z

106

P1-15: Gating System Optimisation Design Study of a Cast ...  

Science Conference Proceedings (OSTI)

Different designs of the gating and risering systems for the cast automobile ... P1- 04: 3D Microstructural Characterization of Uranium Oxide as a Surrogate Nuclear ... P2-27: Characterization of Carbonate Rocks through X-ray Microtomography.

107

Probing Organic Transistors with Infrared Beams  

NLE Websites -- All DOE Office Websites (Extended Search)

Probing Organic Transistors with Infrared Beams Print Probing Organic Transistors with Infrared Beams Print Silicon-based transistors are well-understood, basic components of contemporary electronic technology. In contrast, there is growing need for the development of electronic devices based on organic polymer materials. Organic field-effect transistors (FETs) are ideal for special applications that require large areas, light weight, and structural flexibility. They also have the advantage of being easy to mass-produce at very low cost. However, even though this class of devices is finding a growing number of applications, electronic processes in organic materials are still not well understood. A group of researchers from the University of California and the ALS has succeeded in probing the intrinsic electronic properties of the charge carriers in organic FETs using infrared spectromicroscopy. The results of their study could help in the future development of sensors, large-area displays, and other plastic electronic components.

108

Spin effects in single-electron transistors  

E-Print Network (OSTI)

Basic electron transport phenomena observed in single-electron transistors (SETs) are introduced, such as Coulomb-blockade diamonds, inelastic cotunneling thresholds, the spin-1/2 Kondo effect, and Fano interference. With ...

Granger, Ghislain

2005-01-01T23:59:59.000Z

109

Development of gallium nitride power transistors  

E-Print Network (OSTI)

GaN-based high-voltage transistors have outstanding properties for the development of ultra-high efficiency and compact power electronics. This thesis describes a new process technology for the fabrication of GaN power ...

Piedra, Daniel, M. Eng. Massachusetts Institute of Technology

2011-01-01T23:59:59.000Z

110

Method of fabrication of display pixels driven by silicon thin film transistors  

DOE Patents (OSTI)

Display pixels driven by silicon thin film transistors are fabricated on plastic substrates for use in active matrix displays, such as flat panel displays. The process for forming the pixels involves a prior method for forming individual silicon thin film transistors on low-temperature plastic substrates. Low-temperature substrates are generally considered as being incapable of withstanding sustained processing temperatures greater than about 200.degree. C. The pixel formation process results in a complete pixel and active matrix pixel array. A pixel (or picture element) in an active matrix display consists of a silicon thin film transistor (TFT) and a large electrode, which may control a liquid crystal light valve, an emissive material (such as a light emitting diode or LED), or some other light emitting or attenuating material. The pixels can be connected in arrays wherein rows of pixels contain common gate electrodes and columns of pixels contain common drain electrodes. The source electrode of each pixel TFT is connected to its pixel electrode, and is electrically isolated from every other circuit element in the pixel array.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA)

1999-01-01T23:59:59.000Z

111

Compact gate valve  

DOE Patents (OSTI)

This invention relates to a double-disc gate valve which is compact, comparatively simple to construct, and capable of maintaining high closing pressures on the valve discs with low frictional forces. The valve casing includes axially aligned ports. Mounted in the casing is a sealed chamber which is pivotable transversely of the axis of the ports. The chamber contains the levers for moving the valve discs axially, and an actuator for the levers. When an external drive means pivots the chamber to a position where the discs are between the ports and axially aligned therewith, the actuator for the levers is energized to move the discs into sealing engagement with the ports.

Bobo, Gerald E. (Knoxville, TN)

1977-01-01T23:59:59.000Z

112

Enhanced Electrochemical Performance of Oxide-carbon Composite ...  

Science Conference Proceedings (OSTI)

Abstract Scope, Hierarchical oxide/carbon nanofiber composites with nanosized ... Engineering in Low Stacking Fault Energy Alloys on their Corrosion Resistance ... for Intrinsic Electrical Characterization of Graphene Filed-Effect Transistors.

113

Penn State DOE GATE Program  

DOE Green Energy (OSTI)

The Graduate Automotive Technology Education (GATE) Program at The Pennsylvania State University (Penn State) was established in October 1998 pursuant to an award from the U.S. Department of Energy (U.S. DOE). The focus area of the Penn State GATE Program is advanced energy storage systems for electric and hybrid vehicles.

Anstrom, Joel

2012-08-31T23:59:59.000Z

114

Probing Organic Transistors with Infrared Beams  

NLE Websites -- All DOE Office Websites (Extended Search)

Probing Organic Transistors with Probing Organic Transistors with Infrared Beams Probing Organic Transistors with Infrared Beams Print Wednesday, 26 July 2006 00:00 Silicon-based transistors are well-understood, basic components of contemporary electronic technology. In contrast, there is growing need for the development of electronic devices based on organic polymer materials. Organic field-effect transistors (FETs) are ideal for special applications that require large areas, light weight, and structural flexibility. They also have the advantage of being easy to mass-produce at very low cost. However, even though this class of devices is finding a growing number of applications, electronic processes in organic materials are still not well understood. A group of researchers from the University of California and the ALS has succeeded in probing the intrinsic electronic properties of the charge carriers in organic FETs using infrared spectromicroscopy. The results of their study could help in the future development of sensors, large-area displays, and other plastic electronic components.

115

An efficient approach to simultaneous transistor and interconnect sizing  

Science Conference Proceedings (OSTI)

In this paper, we study the simultaneous transistor and interconnect sizing (STIS) problem. We define a class of optimization problems as CH-posynomial programs and reveal a general dominance property for all CH-posynomial programs. We show that the ... Keywords: CH-posynomial programs, STIS, circuit CAD, driver/buffer, transistor and interconnect sizing, transistor sizing, wire sizing problem

Jason Cong; Lei He

1997-01-01T23:59:59.000Z

116

Self-protecting transistor oscillator for treating animal tissues  

SciTech Connect

A transistor oscillator circuit wherein the load current applied to animal tissue treatment electrodes is fed back to the transistor. Removal of load is sensed to automatically remove feedback and stop oscillations. A thermistor on one treatment electrode senses temperature, and by means of a control circuit controls oscillator transistor current.

Doss, James D. (Los Alamos, NM)

1980-01-01T23:59:59.000Z

117

Gate Solar | Open Energy Information  

Open Energy Info (EERE)

Sector Solar Product JV set up for the promotion, exploitation and sale of photovoltaic solar power plants. References Gate Solar1 LinkedIn Connections CrunchBase Profile No...

118

from Microsoft's Bill Gates. Summer  

NLE Websites -- All DOE Office Websites (Extended Search)

Power surge (page 2) Developing fuel for next- generation nuclear reactors, with backing from Microsoft's Bill Gates. Summer fun (pages 4-5) All aboard a bus or train and tour Y-12...

119

Shootthrough fault protection system for bipolar transistors in a voltage source transistor inverter  

SciTech Connect

Faulted bipolar transistors in a voltage source transistor inverter are protected against shootthrough fault current, from the filter capacitor of the d-c voltage source which drives the inverter over the d-c bus, by interposing a small choke in series with the filter capacitor to limit the rate of rise of that fault current while at the same time causing the d-c bus voltage to instantly drop to essentially zero volts at the beginning of a shootthrough fault. In this way, the load lines of the faulted transistors are effectively shaped so that they do not enter the second breakdown area, thereby preventing second breakdown destruction of the transistors.

Wirth, W.F.

1982-01-12T23:59:59.000Z

120

The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

We have investigated the effect of proton irradiation on reliability of InAlN/GaN high electron mobility transistors (HEMTs). Devices were subjected to 5-15 MeV proton irradiations with a fixed dose of 5 1015 cm-2, or to a different doses of 2 1011, 5 1013 or 2 1015 cm-2 of protons at a fixed energy of 5 MeV. During off-state electrical stressing, the typical critical voltage for un-irradiated devices was 45 to 55 V. By sharp contrast, no critical voltage was detected for proton irradiated HEMTs up to 100 V, which was instrument-limited. After electrical stressing, no degradation was observed for the drain or gate current-voltage characteristics of the proton-irradiated HEMTs. However, the drain current decreased ~12%, and the reverse bias gate leakage current increased more than two orders of magnitude for un-irradiated HEMTs as a result of electrical stressing.

Liu, L. [University of Florida, Gainesville; Lo, C. F. [University of Florida; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL; Ren, F. [University of Florida

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Analytical Theory of Graphene Nanoribbon Transistors  

Science Conference Proceedings (OSTI)

Graphene has emerged as one of the most promising materials to address scaling challenges in the post silicon era. A simple model for graphene nanoribbon field-effect transistors (GNRFETs) is developed for treating the effects of edge bond relaxation, ... Keywords: Graphene nanoribbons, analytical model, edge bond relaxation, third nearest neighbor interaction, edge scattering

Pei Zhao; Mihir Choudhury; Kartik Mohanram; Jing Guo

2008-09-01T23:59:59.000Z

122

Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields  

DOE Patents (OSTI)

A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space. The layer thicknesses of the quantum well layers are selected to provide a superlattice L/sub 2D/-valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley. 2 figs.

Chaffin, R.J.; Dawson, L.R.; Fritz, I.J.; Osbourn, G.C.; Zipperian, T.E.

1987-06-08T23:59:59.000Z

123

Nitride Based Insulated Gate Field Effect Transistors Broadband Center, ECSE and Physics, Computer, and Systems  

E-Print Network (OSTI)

for commercialization of GaN based electronics. [1 ] M. Asif Khan, J. N. Kuznia, A. R. Bhattarai, and D. P. Olson, Ga. 281, p.769 (1993) [2 ] M. Asif Khan, Michael S. Shur, Q. C. Chen, and J. N. Kuznia, Current, Bristol, 1995), p.459 [4 ] M. Asif Khan, X. Hu, G. Simin, A. Lunev, and J. Yang, R. Gaska and M. S. Shur

Lü, James Jian-Qiang

124

Halogen-Based Plasma Etching of Novel Field-Effect Transistor Gate Materials  

E-Print Network (OSTI)

and W. Gerhardt, Zur Chemie Der Platinmetalle - Ruo2Anorganische Und Allgemeine Chemie, 1963. 319(5-6): p. 327-A. Tebben, and W. Gerhardt, Zur Chemie Der Platinmetalle .5.

Kiehlbaugh, Kasi Michelle

2009-01-01T23:59:59.000Z

125

Randomized Benchmarking of Quantum Gates  

E-Print Network (OSTI)

A key requirement for scalable quantum computing is that elementary quantum gates can be implemented with sufficiently low error. One method for determining the error behavior of a gate implementation is to perform process tomography. However, standard process tomography is limited by errors in state preparation, measurement and one-qubit gates. It suffers from inefficient scaling with number of qubits and does not detect adverse error-compounding when gates are composed in long sequences. An additional problem is due to the fact that desirable error probabilities for scalable quantum computing are of the order of 0.0001 or lower. Experimentally proving such low errors is challenging. We describe a randomized benchmarking method that yields estimates of the computationally relevant errors without relying on accurate state preparation and measurement. Since it involves long sequences of randomly chosen gates, it also verifies that error behavior is stable when used in long computations. We implemented randomized benchmarking on trapped atomic ion qubits, establishing a one-qubit error probability per randomized pi/2 pulse of 0.00482(17) in a particular experiment. We expect this error probability to be readily improved with straightforward technical modifications.

E. Knill; D. Leibfried; R. Reichle; J. Britton; R. B. Blakestad; J. D. Jost; C. Langer; R. Ozeri; S. Seidelin; D. J. Wineland

2007-07-06T23:59:59.000Z

126

Combined Transistor Sizing with Bu er Insertion for Timing Optimization  

E-Print Network (OSTI)

. on CAD, vol. CAD-2, pp. 202 211, July 1983. 8 K. O. Jeppson, Modeling the in uence of the transistor gain

Sapatnekar, Sachin

127

New Design for Transistors Powered by Single Electrons  

Science Conference Proceedings (OSTI)

... This type of innovative transistor, called a "single-electron tunneling" (SET) device, is typically made with a metal wire interrupted by insulating ...

2013-08-07T23:59:59.000Z

128

Dynamic gating window for compensation of baseline shift in respiratory-gated radiation therapy  

Science Conference Proceedings (OSTI)

Purpose: To analyze and evaluate the necessity and use of dynamic gating techniques for compensation of baseline shift during respiratory-gated radiation therapy of lung tumors. Methods: Motion tracking data from 30 lung tumors over 592 treatment fractions were analyzed for baseline shift. The finite state model (FSM) was used to identify the end-of-exhale (EOE) breathing phase throughout each treatment fraction. Using duty cycle as an evaluation metric, several methods of end-of-exhale dynamic gating were compared: An a posteriori ideal gating window, a predictive trend-line-based gating window, and a predictive weighted point-based gating window. These methods were evaluated for each of several gating window types: Superior/inferior (SI) gating, anterior/posterior beam, lateral beam, and 3D gating. Results: In the absence of dynamic gating techniques, SI gating gave a 39.6% duty cycle. The ideal SI gating window yielded a 41.5% duty cycle. The weight-based method of dynamic SI gating yielded a duty cycle of 36.2%. The trend-line-based method yielded a duty cycle of 34.0%. Conclusions: Dynamic gating was not broadly beneficial due to a breakdown of the FSM's ability to identify the EOE phase. When the EOE phase was well defined, dynamic gating showed an improvement over static-window gating.

Pepin, Eric W.; Wu Huanmei; Shirato, Hiroki [School of Health Sciences, Purdue University, West Lafayette, Indiana 47907 (United States); Purdue School of Engineering Technology, IUPUI, Indianapolis, Indiana 46202 (United States); Hokkaido University School of Medicine, Sapporo, 060-8638 (Japan)

2011-04-15T23:59:59.000Z

129

Rational Design and Preparation of Organic Semiconductors for use in Field Effect Transistors and Photovoltaic Cells  

E-Print Network (OSTI)

in thin film organic photovoltaic cells (OPVs) is presented.Effect Transistors and Photovoltaic Cells By Clayton EdwardEffect Transistors and Photovoltaic Cells By Clayton Edward

Mauldin, Clayton Edward

2010-01-01T23:59:59.000Z

130

GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al{sub 2}O{sub 3} gate oxide  

SciTech Connect

The integration of high carrier mobility materials into future CMOS generations is presently being studied in order to increase drive current capability and to decrease power consumption in future generation CMOS devices. If III-V materials are the candidates of choice for n-type channel devices, antimonide-based semiconductors present high hole mobility and could be used for p-type channel devices. In this work we first demonstrate the heteroepitaxy of fully relaxed GaSb epilayers on InP(001) substrates. In a second part, the properties of the Al{sub 2}O{sub 3}/GaSb interface have been studied by in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric. The interface is abrupt without any substantial interfacial layer, and is characterized by high conduction and valence band offsets. Finally, MOS capacitors show well-behaved C-V with relatively low D{sub it} along the bandgap, these results point out an efficient electrical passivation of the Al{sub 2}O{sub 3}/GaSb interface.

Merckling, C.; Brammertz, G.; Hoffmann, T. Y.; Caymax, M.; Dekoster, J. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven (Belgium); Sun, X. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium); Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284 (United States); Alian, A.; Heyns, M. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven (Belgium); Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium); Afanas'ev, V. V. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium)

2011-04-01T23:59:59.000Z

131

Gate fidelity of arbitrary single-qubit gates constrained by conservation laws  

E-Print Network (OSTI)

Recent investigations show that conservation laws limit the accuracy of gate operations in quantum computing. The inevitable error under the angular momentum conservation law has been evaluated so far for the CNOT, Hadamard, and NOT gates for spin 1/2 qubits, while the SWAP gate has no constraint. Here, we extend the above results to general single-qubit gates. We obtain an upper bound of the gate fidelity of arbitrary single-qubit gates implemented under arbitrary conservation laws, determined by the geometry of the conservation law and the gate operation on the Bloch sphere as well as the size of the ancilla.

Tokishiro Karasawa; Julio Gea-Banacloche; Masanao Ozawa

2008-09-18T23:59:59.000Z

132

Graduate Automotive Technology Education (GATE) Initiative Awards |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards September 8, 2011 - 11:46am Addthis Graduate Automotive Technology Education (GATE) Initiative Awards DOE's Graduate Automotive Technology Education (GATE) initiative will award $6.4 million over the course of five years to support seven Centers of Excellence at American colleges, universities, and university-affiliated research institutions. The awardees will focus on three critical automotive technology areas: hybrid propulsion, energy storage, and lightweight materials. By funding curriculum development and expansion as well as laboratory work, GATE allows higher education institutions to develop multidisciplinary training. As a result, GATE promotes the development of a

133

Graduate Automotive Technology Education (GATE) Initiative Awards |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards September 8, 2011 - 11:46am Addthis Graduate Automotive Technology Education (GATE) Initiative Awards DOE's Graduate Automotive Technology Education (GATE) initiative will award $6.4 million over the course of five years to support seven Centers of Excellence at American colleges, universities, and university-affiliated research institutions. The awardees will focus on three critical automotive technology areas: hybrid propulsion, energy storage, and lightweight materials. By funding curriculum development and expansion as well as laboratory work, GATE allows higher education institutions to develop multidisciplinary training. As a result, GATE promotes the development of a

134

Influence of post deposition annealing on Y2O3-gated GaAs MOS capacitors and their reliability issues  

Science Conference Proceedings (OSTI)

The feasibility of employing yttrium oxide (Y"2O"3) as high-k gate dielectrics for GaAs metal-oxide-semiconductor (MOS) devices has been investigated. MOS capacitors were fabricated using RF-sputtered deposited Y"2O"3 films on NH"4OH treated n-GaAs substrate. ... Keywords: GaAs, TDDB, Trapping centroid, Y2O3

P. S. Das; A. Biswas

2011-03-01T23:59:59.000Z

135

Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers  

Science Conference Proceedings (OSTI)

Influence corresponding to the position of {delta}-doped supplied layer on InGaP/GaAs high electron mobility transistors is comparatively studied by two-dimensional simulation analysis. The simulated results exhibit that the device with lower {delta}-doped supplied layer shows a higher gate potential barrier height, a higher saturation output current, a larger magnitude of negative threshold voltage, and broader gate voltage swing, as compared to the device with upper {delta}-doped supplied layer. Nevertheless, it has smaller transconductance and inferior high-frequency characteristics in the device with lower {delta}-doped supplied layer. Furthermore, a knee effect in current-voltage curves is observed at low drain-to-source voltage in the two devices, which is investigated in this article.

Tsai, Jung-Hui, E-mail: jhtsai@nknucc.nknu.edu.tw; Ye, Sheng-Shiun [National Kaohsiung Normal University, Department of Electronic Engineering, Taiwan (China); Guo, Der-Feng [Air Force Academy, Kaohsiung, Department of Electronic Engineering, Taiwan (China); Lour, Wen-Shiung [National Taiwan Ocean University, Department of Electrical Engineering, Taiwan (China)

2012-04-15T23:59:59.000Z

136

Thermally Oxidized Silicon  

NLE Websites -- All DOE Office Websites (Extended Search)

Anneli Munkholm (Lumileds Lighting) and Sean Brennan (SSRL) Anneli Munkholm (Lumileds Lighting) and Sean Brennan (SSRL) Illustration of the silicon positions near the Si-SiO2 interface for a 4° miscut projected onto the ( ) plane. The silicon atoms in the substrate are blue and those in the oxide are red. The small black spots represent the translated silicon positions in the absence of static disorder. The silicon atoms in the oxide have been randomly assigned a magnitude and direction based on the static disorder value at that position in the lattice. The outline of four silicon unit cells is shown in black, whereas the outline of four expanded lattice cells in the oxide is shown in blue One of the most studied devices of modern technology is the field-effect transistor, which is the basis for most integrated circuits. At its heart

137

A "Single-Photon" Transistor in Circuit Quantum Electrodynamics  

E-Print Network (OSTI)

We introduce a circuit quantum electrodynamical setup for a "single-photon" transistor. In our approach photons propagate in two open transmission lines that are coupled via two interacting transmon qubits. The interaction is such that no photons are exchanged between the two transmission lines but a single photon in one line can completely block respectively enable the propagation of photons in the other line. High on-off ratios can be achieved for feasible experimental parameters. Our approach is inherently scalable as all photon pulses can have the same pulse shape and carrier frequency such that output signals of one transistor can be input signals for a consecutive transistor.

Lukas Neumeier; Martin Leib; Michael J. Hartmann

2012-11-30T23:59:59.000Z

138

Polarity inversion of N-face GaN using an aluminum oxide interlayer  

Science Conference Proceedings (OSTI)

The polarity of GaN grown by plasma-assisted molecular beam epitaxy was inverted from N-face to Ga-face by inserting a composite AlN/aluminum oxide (AlO{sub x}) interlayer structure at the inversion interface. The change in polarity was verified in situ by reflection high energy electron diffraction via intensity transients and postgrowth surface reconstructions, and ex situ by convergent beam electron diffraction and etch studies in an aqueous potassium hydroxide solution. The inverted materials showed smooth surfaces and good electrical properties. AlGaN/GaN high electron mobility transistors fabricated on the inverted epilayers showed good dc and high frequency performance. A current-gain cutoff frequency (f{sub T}) of 21 GHz and maximum oscillation frequency (f{sub max}) of 61 GHz were measured in devices with a gate length of 0.7 {mu}m. These data compare favorably to those of Ga-face AlGaN/GaN devices with a similar structure grown on Si-face SiC substrates.

Wong, Man Hoi; Mishra, Umesh K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States); Wu, Feng; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2010-12-15T23:59:59.000Z

139

Timing driven power gating in high-level synthesis  

Science Conference Proceedings (OSTI)

The power gating technique is useful in reducing standby leakage current, but it increases the gate delay. For a functional unit, its maximum allowable delay (for a target clock period) limits the smallest standby leakage current its power gating can ...

Shih-Hsu Huang; Chun-Hua Cheng

2009-01-01T23:59:59.000Z

140

An evaluation of indium antimonide quantum well transistor technology  

E-Print Network (OSTI)

Motivated by the super high electron mobility of Indium Antimonide (InSb), researchers have seen great potential to use this new material in high switching speed and low power transistors. In Dec, 2005, Intel and its ...

Liu, Jingwei, M. Eng. Massachusetts Institute of Technology

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

BN/Graphene/BN Transistors for RF Applications  

E-Print Network (OSTI)

In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched ...

Taychatanapat, Thiti

142

Retaining latch for a water pit gate  

DOE Patents (OSTI)

The present invention relates to retaining devices which are used to latch two elements or parts together and, more particularly, to gate latches for use in locking a gate to a wall bracket in a water pit utilized to store or handle hazardous materials. A retaining latch is provided comprising a latch plate which is rotatably mounted to each end of the top of the gate and a recessed opening, formed in the gate frame, for engaging an edge of the latch plate. The latch plate is circular in profile with one side cut away or flat, such that the latch plate is D-shaped. The remaining circular edge of the latch plate comprises steps of successively reduced thickness. The stepped edge of the latch plate fits inside a recessed opening formed in the gate frame. As the latch plate is rotated, alternate steps of the latch plate are engaged by the recessed opening. When the latch plate is rotated such that the flat portion of the latch plate faces the recessed opening in the gate frame, there is no connection between the opening and the latch plate and the gate is unlatched from the gate frame.

Beale, A.R.

1996-12-31T23:59:59.000Z

143

Airport Gate Scheduling with Time Windows  

Science Conference Proceedings (OSTI)

In contrast to the existing airport gate assignment studies where flight have fixed schedules, we consider the more realistic situation where flight arrival and departure times can change. Although we minimize walking distances (or travel time) in our ... Keywords: aircraft gate scheduling, memetic algorithm, tabu search

A. Lim; B. Rodrigues; Y. Zhu

2005-09-01T23:59:59.000Z

144

Automatically closing swing gate closure assembly  

DOE Patents (OSTI)

A swing gate closure assembly for nuclear reactor tipoff assembly wherein the swing gate is cammed open by a fuel element or spacer but is reliably closed at a desired closing rate primarily by hydraulic forces in the absence of a fuel charge.

Chang, Shih-Chih (Richland, WA); Schuck, William J. (Richland, WA); Gilmore, Richard F. (Kennewick, WA)

1988-01-01T23:59:59.000Z

145

NMR quantum gate factorization through canonical cosets  

E-Print Network (OSTI)

The block canonical coset decomposition is developed as a universal algorithmic tool to synthesize n-qubit quantum gates out of experimentally realizable NMR elements. The two-, three-, and four-qubit quantum Fourier transformations are worked out as examples. The proposed decomposition bridges the state of the art numerical analysis with NMR quantum gate synthesis.

Renan Cabrera; Denys I. Bondar; Herschel A. Rabitz

2012-10-29T23:59:59.000Z

146

Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 21011 to 21015 cm2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 21015 cm2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 21011 to 21015 cm2 exhibited minimal degradation of the saturation drain current and extrinsic trans- conductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present. VC 2011 American Vacuum Society. [DOI: 10.1116/1.3644480

Lo, C. F. [University of Florida; Liu, L. [University of Florida, Gainesville; Ren, F. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2011-01-01T23:59:59.000Z

147

PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate...

148

SPEED CONTROL SYSTEM FOR AN ACCESS GATE - Energy Innovation Portal  

An access control apparatus for an access gate. The access gate typically has a rotator that is configured to rotate around a rotator axis at a first ...

149

ESS 2012 Peer Review - Notrees Wind Storage - Jeff Gates, Duke...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Notrees Energy Storage Project Jeff Gates Duke Energy jeff.gates@duke-energy.com Project Objectives * Use energy storage to increase the value and practical application of wind...

150

Growth of gadolinium oxide films for advanced MOS structure  

Science Conference Proceedings (OSTI)

We have investigated properties of insulating gadolinium oxide (Gd"2O"3) films in connection with the replacement of silicon oxide (SiO"2) gate dielectrics in new generation of CMOS devices. The Gd"2O"3 layers were grown using metal organic chemical ... Keywords: Gadolinium oxide, High-? dielectric, MOCVD, MOS structure

R. Luptk; K. Frhlich; A. Rosov; K. Huekov; M. apajna; D. Machajd?k; M. Jergel; J. P. Espins; C. Mansilla

2005-06-01T23:59:59.000Z

151

Graduate Automotive Technology Education (GATE) Center  

DOE Green Energy (OSTI)

The Graduate Automotive Technology Education (GATE) Center at the University of Tennessee, Knoxville has completed its sixth year of operation. During this period the Center has involved thirteen GATE Fellows and ten GATE Research Assistants in preparing them to contribute to advanced automotive technologies in the center's focus area: hybrid drive trains and control systems. Eighteen GATE students have graduated, and three have completed their course work requirements. Nine faculty members from three departments in the College of Engineering have been involved in the GATE Center. In addition to the impact that the Center has had on the students and faculty involved, the presence of the center has led to the acquisition of resources that probably would not have been obtained if the GATE Center had not existed. Significant industry interaction such as internships, equipment donations, and support for GATE students has been realized. The value of the total resources brought to the university (including related research contracts) exceeds $4,000,000. Problem areas are discussed in the hope that future activities may benefit from the operation of the current program.

Jeffrey Hodgson; David Irick

2005-09-30T23:59:59.000Z

152

Quantum gates and their coexisting geometric phases  

SciTech Connect

Geometric phases arise naturally in a variety of quantum systems with observable consequences. They also arise in quantum computations when dressed states are used in gating operations. Here we show how they arise in these gating operations and how one may take advantage of the dressed states producing them. Specifically, we show that for a given, but arbitrary Hamiltonian, and at an arbitrary time {tau}, there always exists a set of dressed states such that a given gate operation can be performed by the Hamiltonian up to a phase {phi}. The phase is a sum of a dynamical phase and a geometric phase. We illustrate the dressed phase for several systems.

Wu Lianao [Ikerbasque, Basque Foundation for Science, E-48011 Bilbao (Spain); Department of Theoretical Physics and History of Science, Basque Country University (EHU/UPV), P.O. Box 644, E-48080 Bilbao (Spain); Bishop, C. Allen [Physics Department, Southern Illinois University, Carbondale, Illinois 62901-4401 (United States); Byrd, Mark S. [Physics Department, Southern Illinois University, Carbondale, Illinois 62901-4401 (United States); Computer Science Department, Southern Illinois University, Carbondale, Illinois 62901 (United States)

2011-08-15T23:59:59.000Z

153

Investigation of the tunneling emitter bipolar transistor as spin-injector into silicon  

E-Print Network (OSTI)

In this thesis is discussed the tunneling emitter bipolar transistor as a possible spin-injector into silicon. The transistor has a metallic emitter which as a spin-injector will be a ferromagnet. Spin-polarized electrons ...

Van Veenhuizen, Marc Julien

2010-01-01T23:59:59.000Z

154

Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition  

E-Print Network (OSTI)

Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO[subscript 2] substrate. The properties and integration of these graphene-on-insulator transistors are presented and ...

Keast, Craig L.

155

Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields  

DOE Patents (OSTI)

In a field-effect transistor comprising a semiconductor having therein a source, a drain, a channel and a gate in operational relationship, there is provided an improvement wherein said semiconductor is a superlattice comprising alternating quantum well and barrier layers, the quantum well layers comprising a first direct gap semiconductor material which in bulk form has a certain bandgap and a curve of electron velocity versus applied electric field which has a maximum electron velocity at a certain electric field, the barrier layers comprising a second semiconductor material having a bandgap wider than that of said first semiconductor material, wherein the layer thicknesses of said quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice having a curve of electron velocity versus applied electric field which has a maximum electron velocity at a certain electric field, and wherein the thicknesses of said quantum well layers are selected to provide a superlattice curve of electron velocity versus applied electric field whereby, at applied electric fields higher than that at which the maximum electron velocity occurs in said first material when in bulk form, the electron velocities are higher in said superlattice than they are in said first semiconductor material in bulk form.

Chaffin, R.J.; Dawson, L.R.; Fritz, I.J.; Osbourn, G.C.; Zipperian, T.E.

1984-04-19T23:59:59.000Z

156

Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields  

DOE Patents (OSTI)

A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space which includes a lowest energy .GAMMA.-valley and a next lowest energy L-valley, each k-vector corresponding to one of the orthogonal directions defined by the planes of said layers and the directions perpendicular thereto. The layer thicknesses of the quantum well layers are selected to provide a superlattice L.sub.2D -valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley.

Chaffin, deceased, Roger J. (late of Albuquerque, NM); Dawson, Ralph (Albuquerque, NM); Fritz, Ian J. (Albuquerque, NM); Osbourn, Gordon C. (Albuquerque, NM); Zipperian, Thomas E. (Albuquerque, NM)

1989-01-01T23:59:59.000Z

157

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

Science Conference Proceedings (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

158

David A Gates | Princeton Plasma Physics Lab  

NLE Websites -- All DOE Office Websites (Extended Search)

A Gates A Gates Principal Research Physicist, Stellerator Physics Lead, Advanced Projects Division, Science Focus Group Leader for Macroscopic Stability David Gates is a principal research physicist for the advanced projects division of PPPL, and the stellarator physics leader at the Laboratory. In the latter capacity he leads collaborative efforts with the Wendelstein 7-X and Large Helical Device stellarator projects in Germany and Japan, respectively. Gates is first author of more than a dozen research papers, including an April, 2012, paper that proposed a possible solution to a critical barrier to fusion as a source of energy for generating electricity. Interests Collisional energy transport High-frequency Alfvén waves Fast-ion energy transfer Ideal and resistive magneto-hydrodynamic stability

159

Observations and Mechanisms of GATE Waterspouts  

Science Conference Proceedings (OSTI)

The GATE data base for days 261 and 186 is used for a combined observational and numerical investigation of interacting cumulus processes that may be important in the generation of waterspouts. The results suggest that the existence of cumulus-...

Joanne Simpson; Bruce R. Morton; Michael C. McCumber; Richard S. Penc

1986-04-01T23:59:59.000Z

160

The GATE Boundary Layer Instrumentation System (BLIS)  

Science Conference Proceedings (OSTI)

A tethered sonde, the Boundary Layer Instrument System (BLIS), was designed for use from shipboard platforms in the GARP Atlantic Tropical Experiment (GATE). This system was able to monitor the thermal and kinematic properties of the boundary ...

Donald P. Wylie; Chester F. Ropelewski

1980-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

ESS 2012 Peer Review - Engineered Gate Oxides for Wide Bandgap...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. SAND No. 2011-XXXXP...

162

Characterization of ALD Beryllium Oxide as a Potential High-? Gate ...  

Science Conference Proceedings (OSTI)

Elements of Power Conversion Integration in Group-III Nitride Heterojunctions Fabrication of PLZT Dielectric Films for Power Inverters in Electric Drive Vehicles.

163

GaTe semiconductor for radiation detection  

SciTech Connect

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

164

Range gated strip proximity sensor  

DOE Patents (OSTI)

A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance. 6 figs.

McEwan, T.E.

1996-12-03T23:59:59.000Z

165

Range gated strip proximity sensor  

DOE Patents (OSTI)

A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance.

McEwan, Thomas E. (Livermore, CA)

1996-01-01T23:59:59.000Z

166

Transistors into Resistors -- and Back Again | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Transistors into Resistors -- and Back Again Transistors into Resistors -- and Back Again Transistors into Resistors -- and Back Again December 22, 2011 - 3:07pm Addthis The future of the computer chips that serve in supercomputers, smart phones, sensors, vehicles and appliances may hinge on a new material developed by researchers at Northwestern University that rearranges itself to steer or stop an electrical current. | Photo courtesy of Pacific Northwest National Laboratory. The future of the computer chips that serve in supercomputers, smart phones, sensors, vehicles and appliances may hinge on a new material developed by researchers at Northwestern University that rearranges itself to steer or stop an electrical current. | Photo courtesy of Pacific Northwest National Laboratory. Charles Rousseaux Charles Rousseaux

167

Detection of Ionizing Radiation Using Graphene Field Effect Transistors  

E-Print Network (OSTI)

electrode, while the other electrode is the graphene layer. Applying a gate voltage, VG, field lines) of graphite, which has unique electronic properties [1]. Graphene has a high carrier mobility, about 10 times, and a layer of graphene on top (Fig. 2). The electric field is created by applying the gate voltage from

Chen, Yong P.

168

Sliding-gate valve for use with abrasive materials  

DOE Patents (OSTI)

The invention is a flow and pressure-sealing valve for use with abrasive solids. The valve embodies special features which provide for long, reliable operating lifetimes in solids-handling service. The valve includes upper and lower transversely slidable gates, contained in separate chambers. The upper gate provides a solids-flow control function, whereas the lower gate provides a pressure-sealing function. The lower gate is supported by means for (a) lifting that gate into sealing engagement with its seat when the gate is in its open and closed positions and (b) lowering the gate out of contact with its seat to permit abrasion-free transit of the gate between its open and closed positions. When closed, the upper gate isolates the lower gate from the solids. Because of this shielding action, the sealing surface of the lower gate is not exposed to solids during transit or when it is being lifted or lowered. The chamber containing the lower gate normally is pressurized slightly, and a sweep gas is directed inwardly across the lower-gate sealing surface during the vertical translation of the gate.

Ayers, Jr., William J. (Morgantown, WV); Carter, Charles R. (Fairmont, WV); Griffith, Richard A. (Morgantown, WV); Loomis, Richard B. (Bruceton Mills, WV); Notestein, John E. (Morgantown, WV)

1985-01-01T23:59:59.000Z

169

Ge epitaxial refill deposition techniques for fabricating pedestal transistor structures  

Science Conference Proceedings (OSTI)

An etch-epitaxial refill technique is described for the fabrication of integrated high-speed Ge transistor structures having a pedestal configuration. The device areas surrounding 0.1 ohm-cm mesa structures were refilled with Ge having a resistivity ...

V. J. Silvestri; T. B. Light; H. N. Yu; A. Reisman

1972-01-01T23:59:59.000Z

170

Towards structured ASICs using polarity-tunable Si nanowire transistors  

Science Conference Proceedings (OSTI)

In addition to scaling semiconductor devices down to their physical limit, novel devices show enhanced functionality compared to conventional CMOS. At advanced technology nodes, many devices exhibit ambipolar behavior, i.e., they show n- and p-type ... Keywords: XOR logic synthesis, controllable polarity, nanowire transistors, regular fabrics

Pierre-Emmanuel Gaillardon, Michele De Marchi, Luca Amar, Shashikanth Bobba, Davide Sacchetto, Yusuf Leblebici, Giovanni De Micheli

2013-05-01T23:59:59.000Z

171

Characterizing Quantum Gates via Randomized Benchmarking  

E-Print Network (OSTI)

We describe and expand upon the scalable randomized benchmarking protocol proposed in Phys. Rev. Lett. 106, 180504 (2011) which provides a method for benchmarking quantum gates and estimating the gate-dependence of the noise. The protocol allows the noise to have weak time and gate-dependence, and we provide a sufficient condition for the applicability of the protocol in terms of the average variation of the noise. We discuss how state preparation and measurement errors are taken into account and provide a complete proof of the scalability of the protocol. We establish a connection in special cases between the error rate provided by this protocol and the error strength measured using the diamond norm distance.

Easwar Magesan; Jay M. Gambetta; Joseph Emerson

2011-09-30T23:59:59.000Z

172

Evolving GATE to meet new challenges in language engineering  

Science Conference Proceedings (OSTI)

In this paper we present recent work on GATE, a widely-used framework and graphical development environment for creating and deploying Language Engineering components and resources in a robust fashion. The GATE architecture has facilitated the development ...

Kalina Bontcheva; Valentin Tablan; Diana Maynard; Hamish Cunningham

2004-09-01T23:59:59.000Z

173

Using GATE as an environment for teaching NLP  

Science Conference Proceedings (OSTI)

In this paper we argue that the GATE architecture and visual development environment can be used as an effective tool for teaching language engineering and computational linguistics. Since GATE comes with a customisable and extendable set of components, ...

Kalina Bontcheva; Hamish Cunningham; Valentin Tablan; Diana Maynard; Oana Hamza

2002-07-01T23:59:59.000Z

174

Effect of Oxygen on Ni-Silicided FUSI Metal Gate  

E-Print Network (OSTI)

Continual evolution of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-65 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...

Yu, H.P.

175

Two methods of realising 10nm T-gate lithography  

Science Conference Proceedings (OSTI)

This paper presents two separate methods for the fabrication of 10nm footprint T-gates using a two-step gate process. We examine the limits of lithographic and pattern transfer processes using the exposure of ZEP520A resist by electron beam lithography, ... Keywords: Electron beam lithography, HEMT, ICP, RIE, Reactive ion etching, T-gate

S. Bentley; X. Li; D. A. J. Moran; I. G. Thayne

2009-04-01T23:59:59.000Z

176

Waves at 200 mb during GATE  

Science Conference Proceedings (OSTI)

A 200 mb data set obtained during the GATE experiment of the 1974 summer for the period 15 June-23 September and covering the global tropics 25S to 45N has been analyzed to determine the presence of certain wave modes in the tropical ...

Colin A. Depradine

1981-05-01T23:59:59.000Z

177

Efficient tiling patterns for reconfigurable gate arrays  

Science Conference Proceedings (OSTI)

In this paper we present a few potentially efficient tiling patterns for gate-array realizations. We start with a brief recapitulation of tiling patterns, and fundamental limits of placement/routing in a two-dimensional plane. We state the first principles ... Keywords: FPGA, hexagonal, octagonal, tiling

Sumanta Chaudhuri; Sylvain Guilley; Philippe Hoogvorst; Jean-Luc Danger

2008-04-01T23:59:59.000Z

178

Deep Convection on Day 261 of GATE  

Science Conference Proceedings (OSTI)

Aircraft, radar, satellite and ship data, gathered on 18 September 1974 during GATE, have been brought to bear an clouds of the middle and upper troposphere associated with a cloud cluster occurring near the ridge axis of a 700 mb wave.

C. Warner; J. Simpson; G. Van Helvoirt; D. W. Martin; D. Suchman; G. L. Austin

1980-02-01T23:59:59.000Z

179

Gaussian mixture CPHD filter with gating technique  

Science Conference Proceedings (OSTI)

Cardinalized probability hypothesis density (CPHD) filter provides more accurate estimates of target number than the probability hypothesis density (PHD) filter, and hence, also of the states of targets. This additional capability comes at the price ... Keywords: Finite sets statistics, Gating, Gaussian mixture, Probability hypothesis density, Target tracking

Hongjian Zhang; Zhongliang Jing; Shiqiang Hu

2009-08-01T23:59:59.000Z

180

Quantum process tomography of a controlled-NOT gate  

E-Print Network (OSTI)

We demonstrate complete characterization of a two-qubit entangling process - a linear optics controlled-NOT gate operating with coincident detection - by quantum process tomography. We use maximum-likelihood estimation to convert the experimental data into a physical process matrix. The process matrix allows accurate prediction of the operation of the gate for arbitrary input states, and calculation of gate performance measures such as the average gate fidelity, average purity and entangling capability of our gate, which are 0.90, 0.83 and 0.73, respectively.

J. L. O'Brien; G. J. Pryde; A. Gilchrist; D. F. V. James; N. K. Langford; T. C. Ralph; A. G. White

2004-02-23T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

A Bio-Polymer Transistor: Electrical Amplification by Microtubules  

E-Print Network (OSTI)

Microtubules (MTs) are important cytoskeletal structures, engaged in a number of specific cellular activities, including vesicular traffic, cell cyto-architecture and motility, cell division, and information processing within neuronal processes. MTs have also been implicated in higher neuronal functions, including memory, and the emergence of "consciousness". How MTs handle and process electrical information, however, is heretofore unknown. Here we show new electrodynamic properties of MTs. Isolated, taxol-stabilized microtubules behave as bio-molecular transistors capable of amplifying electrical information. Electrical amplification by MTs can lead to the enhancement of dynamic information, and processivity in neurons can be conceptualized as an "ionic-based" transistor, which may impact among other known functions, neuronal computational capabilities.

Avner Priel; Arnolt J. Ramos; Jack A. Tuszynski; Horacio F. Cantiello

2006-06-09T23:59:59.000Z

182

Atomic and electronic structures of oxides on III-V semiconductors :  

E-Print Network (OSTI)

STM imaging. Subsequently, indium oxide is deposited byIndium Monoxide (In 2 O) Once the surface structure of InAs(001)-(42) was characterized, the gate oxidesIndium I t Tunneling Current LDOS Local Density of States LEED Low Energy Electron Diffraction MBE Molecular Beam Epitaxy MOSFET Metal-Oxide

Shen, Jian

2010-01-01T23:59:59.000Z

183

Using nanoscale transistors to measure single donor spins in semiconductors  

SciTech Connect

We propose a technique for measuring the state of a single donor electron spin usinga field-effect transistor induced two-dimensional electron gas and electrically detected magnetic resonance techniques. The scheme is faciltated by hyperfine coupling to the donor nucleus. We analyze the potential sensitivity and outlne experimental reqiurements. Our measurement provides a single-shot, projective, and quantum non-demoltion measurement of an electron-encoded qubit state.

Sarovar, M.; Young, K. C.; Whaley, K. B.; Schenkel, Thomas

2008-12-01T23:59:59.000Z

184

AgraGate Carbon Credits Corporation | Open Energy Information  

Open Energy Info (EERE)

AgraGate Carbon Credits Corporation AgraGate Carbon Credits Corporation Jump to: navigation, search Name AgraGate Carbon Credits Corporation Place Des Moines, Iowa Zip 50266 Product Offset aggregators that work with American farmers, ranchers, and private forest owners, providing clients with cash flows produced by the sale of credits. Offsets are sold on the Chicago Climate Exchange References AgraGate Carbon Credits Corporation[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. AgraGate Carbon Credits Corporation is a company located in Des Moines, Iowa . References ↑ "AgraGate Carbon Credits Corporation" Retrieved from "http://en.openei.org/w/index.php?title=AgraGate_Carbon_Credits_Corporation&oldid=341882"

185

Carbon Nanotube Transistors: Capacitance Measurements, Localized Damage, And Use As Gold Scaffolding .  

E-Print Network (OSTI)

??Carbon nanotubes are incredible materials with interesting mechanical and electrical properties. This thesis presents diverse experiments based on carbon nanotube transistors. We measured the capacitance (more)

Donev, Luke

2009-01-01T23:59:59.000Z

186

Transistor-based filter for inhibiting load noise from entering a power supply  

DOE Patents (OSTI)

A transistor-based filter for inhibiting load noise from entering a power supply is disclosed. The filter includes a first transistor having an emitter coupled to a power supply, a collector coupled to a load, and a base. The filter also includes a first capacitor coupled between the base of the first transistor and a ground terminal. The filter further includes an impedance coupled between the base and a node between the collector and the load, or a second transistor and second capacitor. The impedance can be a resistor or an inductor.

Taubman, Matthew S

2013-07-02T23:59:59.000Z

187

Gates, Oregon: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Gates, Oregon: Energy Resources Gates, Oregon: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 44.7562329°, -122.4167483° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":44.7562329,"lon":-122.4167483,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

188

Fractional diffusion modeling of ion channel gating  

E-Print Network (OSTI)

An anomalous diffusion model for ion channel gating is put forward. This modeling scheme is able to describe the non-exponential, power-law like gating behavior of residence time intervals in several types of ion channels. Our scheme presents a generalization of the discrete diffusion model by Millhauser, Salpeter and Oswald [Proc. Natl. Acad. Sci. USA 85, 1503 (1988)] to the case of a continuous, anomalously slow conformational diffusion. The corresponding generalization is derived from a continuous time random walk composed of nearest neighbor jumps which in the scaling limit results in a fractional diffusion equation. The studied model contains three parameters only: the mean residence time, a characteristic time of conformational diffusion, and the index of subdiffusion. A tractable analytical expression for the characteristic function of the residence time distribution (RTD) is obtained. In the limiting case of normal diffusion a prior result of Goychuk and Hanggi [Proc. Natl. Acad. Sci. USA 99, 3552 (20...

Goychuk, I; Goychuk, Igor; Hanggi, Peter

2004-01-01T23:59:59.000Z

189

AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO2 dielectrics  

Science Conference Proceedings (OSTI)

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) based on InGaN/GaN multi-quantum-well (MQW) structure has been fabricated with SiO"2 dielectric deposited via photo-chemical vapor deposition (PHCVD) using a deuterium lamp ... Keywords: GaN, HEMT, MQW, Photo-chemical vapor deposition, SiO 2

Kai-Hsuan Lee; Ping-Chuan Chang; Shoou-Jinn Chang

2013-04-01T23:59:59.000Z

190

Patient training in respiratory-gated radiotherapy  

Science Conference Proceedings (OSTI)

Respiratory gating is used to counter the effects of organ motion during radiotherapy for chest tumors. The effects of variations in patient breathing patterns during a single treatment and from day to day are unknown. We evaluated the feasibility of using patient training tools and their effect on the breathing cycle regularity and reproducibility during respiratory-gated radiotherapy. To monitor respiratory patterns, we used a component of a commercially available respiratory-gated radiotherapy system (Real Time Position Management (RPM) System, Varian Oncology Systems, Palo Alto, CA 94304). This passive marker video tracking system consists of reflective markers placed on the patient's chest or abdomen, which are detected by a wall-mounted video camera. Software installed on a PC interfaced to this camera detects the marker motion digitally and records it. The marker position as a function of time serves as the motion signal that may be used to trigger imaging or treatment. The training tools used were audio prompting and visual feedback, with free breathing as a control. The audio prompting method used instructions to 'breathe in' or 'breathe out' at periodic intervals deduced from patients' own breathing patterns. In the visual feedback method, patients were shown a real-time trace of their abdominal wall motion due to breathing. Using this, they were asked to maintain a constant amplitude of motion. Motion traces of the abdominal wall were recorded for each patient for various maneuvers. Free breathing showed a variable amplitude and frequency. Audio prompting resulted in a reproducible frequency; however, the variability and the magnitude of amplitude increased. Visual feedback gave a better control over the amplitude but showed minor variations in frequency. We concluded that training improves the reproducibility of amplitude and frequency of patient breathing cycles. This may increase the accuracy of respiratory-gated radiation therapy.

Kini, Vijay R.; Vedam, Subrahmanya S.; Keall, Paul J.; Patil, Sumukh; Chen, Clayton; Mohan, Radhe

2003-03-31T23:59:59.000Z

191

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

192

Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation energy on dc and rf characteristics of InAlN/GaN high electron mobility transistors (HEMTs) were investigated. A fixed proton dose of 51015 cm2 with 5, 10, and 15 MeV irradiation energies was used in this study. For the dc characteristics, degradation was observed for sheet resistance, transfer resistance, contact resistivity, saturation drain current, maximum transconductance, reverse-bias gate leakage current, and sub-threshold drain leakage current for all the irradiated HEMTs; however, the degree of the degradation was decreased as the irradiation energy increased. Similar trends were obtained for the rf performance of the devices, with 10% degradation of the unity gain cut-off frequency (fT) and maximum oscillation frequency ( fmax) for the HEMTs irradiated with 15 MeV protons but 30% for 5 MeV proton irradiation. The carrier removal rate was in the range 0.66 1.24 cm1 over the range of proton energies investigated

Lo, C. F. [University of Florida; Liu, L. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Gila, Brent P. [University of Florida, Gainesville; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

193

Analytical modeling and parameter extraction of top and bottom contact structures of organic thin film transistors  

Science Conference Proceedings (OSTI)

This paper proposes a structure based model of an organic thin film transistor (OTFT) and analyzes its device physics. The analytical model is developed for the top contact structure by mapping the overlap region to the resistance (in the vertical direction) ... Keywords: Analytical modeling, Contact resistance, Organic thin film transistor, Overlap region, Parameter extraction, Top and bottom contact structure, Vertical resistance

Brijesh Kumar, B. K. Kaushik, Y. S. Negi, S. Saxena, G. D. Varma

2013-09-01T23:59:59.000Z

194

Nanoimprinted organic field-effect transistors: fabrication, transfer mechanism and solvent effects on device characteristics  

Science Conference Proceedings (OSTI)

The influence of solvent effects on the electrical characteristics of solution-processed organic field-effect transistors, with dihexylquaterthiophene (DH4T) as the active semiconductor material, has been investigated. A combination of nanoimprint and ... Keywords: nanoimprint lithography, organic field-effect transistors, short channel effects

A. P. Kam; J. Seekamp; V. Solovyev; C. Clavijo Cedeo; A. Goldschmidt; C. M. Sotomayor Torres

2004-06-01T23:59:59.000Z

195

THE DEVELOPMENT OF A DIRECT COUPLED, TRANSISTORIZED, SUB-MILLIMICROAMPERE CURRENT AMPLIFIER  

SciTech Connect

Development of a direct coupled, transistorized current amplifler is reported with sensitivities extending below the millimicroampere region of input currents. The amplifier employs a shunt feedback and exhibits reproducible characteristics. Discovery of this special effect and the design and testing employed in the incorporation of transistors into the amplifier are described. (J.R.D.)

May, F.T.

1961-08-11T23:59:59.000Z

196

Carbon nanotube field effect transistors for high performance analog applications: An optimum design approach  

Science Conference Proceedings (OSTI)

There is a need to explore circuit designs in new emerging technologies for their rapid commercialization to extend Moore's law beyond 22nm technology node. Carbon nanotube based transistor (CNFET) has significant potential to replace CMOS in the future ... Keywords: Analog, CMOS, Carbon nanotube field effect transistor (CNFET), Chirality, Single walled CNT

Fahad Ali Usmani; Mohammad Hasan

2010-07-01T23:59:59.000Z

197

Modeling of carbon nanotube field-effect transistor with nanowelding treatment  

Science Conference Proceedings (OSTI)

An efficient and universal numerical model of carbon nanotube (CN) field-effect transistor (FET) with nanowelding treatment has been developed. In this model, an analytic expression of carrier distribution of intrinsic CN is incorporated into the modified ... Keywords: 73.63.Fg, 85.35.Kt, Ambipolar conduction, Carbon nanotube field-effect transistor (CNFET), Newton-Raphson iteration, Schottky barrier (SB)

Wei Zhang; Changxin Chen; Yafei Zhang

2009-12-01T23:59:59.000Z

198

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network (OSTI)

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

199

All-optical reversible logic gate via adiabatic population transfer  

E-Print Network (OSTI)

The Toffoli gate is an essential logic element, which permits implementation of a reversible processor. It is of relevance both for classical as well as quantum logics. We propose and theoretically study all-optical implementations of three-bit and four-bit Toffoli gates by application of adiabatic population transfer techniques. For a three-bit Toffoli gate we use variants of stimulated Raman adiabatic passage (STIRAP) processes in a $\\Lambda$-type level scheme, driven by two laser pulses at sufficiently large detunings. For the implementation of a four-bit Toffoli gate, we apply reversible adiabatic population transfer in five-level quantum systems, interacting with three laser pulses. We demonstrate correct all-optical implementation of the truth table of three-bit and four-bit Toffoli gates. Moreover, we derive conditions for adiabatic evolution of the population dynamics and robust operation of the gates.

G. Grigoryan; V. Chaltykyan; E. Gazazyan; O. Tikhova; T. Halfmann

2013-06-10T23:59:59.000Z

200

Apparatus and method for recharging a string a avalanche transistors within a pulse generator  

DOE Patents (OSTI)

An apparatus and method for recharging a string of avalanche transistors within a pulse generator is disclosed. A plurality of amplification stages are connected in series. Each stage includes an avalanche transistor and a capacitor. A trigger signal, causes the apparatus to generate a very high voltage pulse of a very brief duration which discharges the capacitors. Charge resistors inject current into the string of avalanche transistors at various points, recharging the capacitors. The method of the present invention includes the steps of supplying current to charge resistors from a power supply; using the charge resistors to charge capacitors connected to a set of serially connected avalanche transistors; triggering the avalanche transistors; generating a high-voltage pulse from the charge stored in the capacitors; and recharging the capacitors through the charge resistors.

Fulkerson, E. Stephen (Livermore, CA)

2000-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

High fidelity gates in quantum dot spin qubits  

E-Print Network (OSTI)

Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. Differences between the schemes can make it difficult to compare them meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet-triplet (ST) and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance (LQR), and a gate-like process known as stimulated Raman adiabatic passage (STIRAP). These gates are all mediated by an exchange interaction that depends on a small number of experimental control parameters, including the interdot tunnel coupling $g$ and the detuning $\\epsilon$, which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity ($f$) for fixed $g$ as a function of the other control parameters; this yields an $f^\\text{opt}(g)$ that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound $f^\\text{max}$ that is specific to the qubit-gate combination. We show that similar gate fidelities ($\\sim 99.5$%) should be attainable for ST qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields $\\Delta B$ produced by nuclear spins.

Teck Seng Koh; S. N. Coppersmith; Mark Friesen

2013-07-31T23:59:59.000Z

202

CLUSTERING OF CYCLIC-NUCLEOTIDE-GATED CHANNELS IN OLFACTORY CILIA.  

E-Print Network (OSTI)

??Cyclic nucleotide gated (CNG) channels play an important role in mediating sensory signal transduction in olfactory receptor neurons, which takes place primarily in olfactory cilia. (more)

FLANNERY, RICHARD JOHN

2006-01-01T23:59:59.000Z

203

Gates/filters in Flow Cytometry Data Visualization  

E-Print Network (OSTI)

The flowViz package provides tools for visualization of flow cytometry data. This document describes the support for visualizing gates (a.k.a. filters). 1

unknown authors

2010-01-01T23:59:59.000Z

204

Gates/filters in Flow Cytometry Data Visualization  

E-Print Network (OSTI)

The flowViz package provides tools for visualization of flow cytometry data. This document describes the support for visualizing gates (a.k.a. filters). 1

unknown authors

2012-01-01T23:59:59.000Z

205

Composite Toffoli gate with two-round error detection  

E-Print Network (OSTI)

We introduce a fault-tolerant construction to implement a composite quantum operation of four overlapping Toffoli gates. The same construction can produce two independent Toffoli gates. This result lowers resource overheads in designs for quantum computers by more than an order of magnitude. The procedure uses Clifford operations and 64 copies of the non-Clifford gate $T = \\exp[i \\pi (I - \\sigma^z) /8]$. Quantum codes detect errors in the circuit. When the dominant source of error is $T$-gate failure with probability $p$, then the composite Toffoli circuit has postselected failure rate of $3072p^4$ to lowest order.

Cody Jones

2013-03-27T23:59:59.000Z

206

Transistorized power switch and base drive circuit therefore  

DOE Green Energy (OSTI)

A high power switching circuit is disclosed which utilizes a four-terminal Darlington transistor block to improve switching speed, particularly in rapid turn-off. Two independent reverse drive currents are utilized during turn-off in order to expel the minority carriers of the Darlington pair at their own charge sweep-out rate. The reverse drive current may be provided by a current transformer, the secondary of which is tapped to the base terminal of the power stage of the Darlington block. In one application, the switching circuit is used in each power switching element in a chopper-inverter drive of an electric vehicle propulsion system.

Lee, F.C.; Carter, R.A.

1981-03-24T23:59:59.000Z

207

Speed control system for an access gate  

DOE Patents (OSTI)

An access control apparatus for an access gate. The access gate typically has a rotator that is configured to rotate around a rotator axis at a first variable speed in a forward direction. The access control apparatus may include a transmission that typically has an input element that is operatively connected to the rotator. The input element is generally configured to rotate at an input speed that is proportional to the first variable speed. The transmission typically also has an output element that has an output speed that is higher than the input speed. The input element and the output element may rotate around a common transmission axis. A retardation mechanism may be employed. The retardation mechanism is typically configured to rotate around a retardation mechanism axis. Generally the retardation mechanism is operatively connected to the output element of the transmission and is configured to retard motion of the access gate in the forward direction when the first variable speed is above a control-limit speed. In many embodiments the transmission axis and the retardation mechanism axis are substantially co-axial. Some embodiments include a freewheel/catch mechanism that has an input connection that is operatively connected to the rotator. The input connection may be configured to engage an output connection when the rotator is rotated at the first variable speed in a forward direction and configured for substantially unrestricted rotation when the rotator is rotated in a reverse direction opposite the forward direction. The input element of the transmission is typically operatively connected to the output connection of the freewheel/catch mechanism.

Bzorgi, Fariborz M. (Knoxville, TN)

2012-03-20T23:59:59.000Z

208

Advanced high-? dielectric stacks with polySi and metal gates: recent progress and current challenges  

Science Conference Proceedings (OSTI)

The paper reviews our recent progress and current challenges in implementing advanced gate stacks composed of high-? dielectric materials and metal gates in mainstream Si CMOS technology. In particular, we address stacks of doped polySi gate electrodes ...

E. P. Gusev; V. Narayanan; M. M. Frank

2006-07-01T23:59:59.000Z

209

Vibration-Assisted Electron Tunneling in C140 Transistors  

E-Print Network (OSTI)

We measure electron tunneling in transistors made from C140, a molecule with a mass?spring?mass geometry chosen as a model system to study electron-vibration coupling. We observe vibration-assisted tunneling at an energy corresponding to the stretching mode of C140. Molecular modeling provides explanations for why this mode couples more strongly to electron tunneling than to the other internal modes of the molecule. We make comparisons between the observed tunneling rates and those expected from the Franck?Condon model. When electrons travel through molecules, vibrational modes of the molecules can affect current flow. Molecular-vibrationassisted tunneling was first measured in the 1960s using devices whose tunnel barriers contained many molecules. 1 Recently, effects of vibrations in single molecules have been measured using scanning tunneling microscopes, 2 singlemolecule transistors, 3,4 and mechanical break junctions. 5 Theoretical considerations suggest that different regimes may exist depending on whether tunneling electrons occupy resonant energy levels on the molecule, and also on the * Corresponding author.

A. N. Pasupathy; J. Park; C. Chang; A. V. Soldatov; S. Lebedkin; R. C. Bialczak; J. E. Grose; L. A. K. Donev; J. P. Sethna; D. C. Ralph; P. L. Mceuen

2004-01-01T23:59:59.000Z

210

Gallium phosphide high-temperature bipolar junction transistor  

DOE Green Energy (OSTI)

Preliminary results are reported on the development of a high-temperature (> 350/sup 0/C) gallium phosphide bipolar junction transistor (BJT) for goethermal and other energy applications. This four-layer p/sup +/n/sup -/pp/sup +/ structure was fromed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The gallium phosphide BJT is observed to have a common-emitter current gain peaking in the range of 6 to 10 (for temperatures from 20/sup 0/C to 400/sup 0/C) and a room-temperature, punchthrough-limited, collector-emitter breakdown voltage of approximately -6V. Other parameters of interest include an f/sub/ = 400 KHz (at 20/sup 0/C) and a collector base leakage current = 200 ..mu..A (at 350/sup 0/C).

Zipperian, T.E.; Dawson, L.R.; Caffin, R.J.

1981-03-01T23:59:59.000Z

211

Power gating design for standard-cell-like structured ASICs  

Science Conference Proceedings (OSTI)

Structured ASIC has been introduced to bridge the power, performance, area and design cost gaps between ASIC and FPGA. As technology scales, leakage power consumption becomes a serious problem. Among the leakage power reduction techniques, power gating ... Keywords: low power, power-gating, structured ASIC, via-configurable

Sin-Yu Chen; Rung-Bin Lin; Hui-Hsiang Tung; Kuen-Wey Lin

2010-03-01T23:59:59.000Z

212

Cardiac perfusion defect detection using gated dynamic spect imaging  

Science Conference Proceedings (OSTI)

In our previous work we proposed a dynamic image reconstruction procedure for gated cardiac imaging, of which the goal is to obtain a single image sequence that shows simultaneously both cardiac motion and tracer distribution change over time. In this ... Keywords: 5D reconstruction, dynamic SPECT, gated SPECT, spatio-temporal processing

Xiaofeng Niu; Yongyi Yang; Miles N. Wernick

2009-11-01T23:59:59.000Z

213

Detectability of perfusion defect in gated dynamic cardiac spect images  

Science Conference Proceedings (OSTI)

Recently we developed an image reconstruction procedure aimed to unify gated imaging and dynamic imaging in nuclear cardiac imaging. It can yield a single image sequence to show simultaneously both cardiac motion and tracer distribution change over the ... Keywords: 5D reconstruction, dynamic SPECT, gated SPECT, spatio-temporal processing

Xiaofeng Niu; Yongyi Yang; Miles N. Wernick

2009-06-01T23:59:59.000Z

214

Non-deterministic Gates for Photonic Single Rail Quantum Logic  

E-Print Network (OSTI)

We discuss techniques for producing, manipulating and measureing qubits encoded optically as vacuum and single photon states. We show that a universal set of non-deterministic gates can be constructed using linear optics and photon counting. We investigate the efficacy of a test gate given realistic detector efficiencies.

A. P. Lund; T. C. Ralph

2002-05-09T23:59:59.000Z

215

Controlled gates for multi-level quantum computation  

Science Conference Proceedings (OSTI)

Multi-level (ML) quantum logic can potentially reduce the number of inputs/outputs or quantum cells in a quantum circuit which is a limitation in current quantum technology. In this paper we propose theorems about ML-quantum and reversible logic circuits. ... Keywords: Controlled gate, Multi-level logic gates, Quantum computing, Quantum cost, Reversible logic

Majid Mohammadi; Aliakbar Niknafs; Mohammad Eshghi

2011-04-01T23:59:59.000Z

216

Gating internal nodes to reduce power during scan shift  

Science Conference Proceedings (OSTI)

It is a common practice to gate a limited number of scan cells in order to reduce overall switching activity during shift, thereby, reducing the circuit's dynamic power consumption. In this paper, we propose a novel approach to reduce overall shift power ... Keywords: gating internal nodes, low power test, scan shift power reduction

Dheepakkumaran Jayaraman; Rajamani Sethuram; Spyros Tragoudas

2010-05-01T23:59:59.000Z

217

Electrical properties of room temperature sputtered Y2O3and MOSFET characteristics  

Science Conference Proceedings (OSTI)

We closely evaluated the properties of Y2O3 deposited by RF sputter system at room temperature for the application to a transparent thin film transistor. Although the leakage current density hardly depends on the deposition conditions, ... Keywords: IGZO, TTFT(transparent thin film transistor), Y2O3, electrical characterization, gate oxide, leakage current

Young-Je Cho; Ji-Hoon Shin; Jae-Kyu Lee; Young-Bae Kim; Duck-Kyun Choi

2008-02-01T23:59:59.000Z

218

City Marketing and Gated Communities: A Case Study of Guaynabo, Puerto Rico.  

E-Print Network (OSTI)

??This dissertation focuses on the dynamics of gated communities with attention to the municipality of Guaynabo, Puerto Rico. Despite the growing numbers of gated communities (more)

Suarez-Carrasquillo, Carlos A.

2009-01-01T23:59:59.000Z

219

Inside the Castle Gates: How Foreign Corporations Nagivate Japan's Policymaking Processes  

E-Print Network (OSTI)

II INSIDE THE CASTLE GATES: POLITICAL STRATEGIES OF MNCS INfortified castle, there are a number of strategies you mightthe castle gates (Part I), and these political strategies

Kushida, Kenji Erik

2010-01-01T23:59:59.000Z

220

Synthesis and Enhanced Intercalation Properties of Nanostructured Vanadium Oxides  

DOE Green Energy (OSTI)

Nanomaterials lie at the heart of the fundamental advances in efficient energy storage/conversion and other types of nanodevices in which the surface process and transport kinetics play determining roles. This review describes some recent developments in the synthesis and characterizations of various vanadium oxide nanostructures including nanowires, nanorolls, nanobelts, and ordered arrays of nanorods, nanotubes, and nanocables for significantly enhanced intercalation properties. The major topic of this article is to highlight the lithium ion intercalation properties of nanostructured vanadium oxides for energy storage as well as other applications in sensors, actuators, and transistors.

Wang, Ying; Cao, Guozhong

2006-05-12T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

From transistor to trapped-ion computers for quantum chemistry  

E-Print Network (OSTI)

Over the last few decades, quantum chemistry has progressed through the development of computational methods based on modern digital computers. However, these methods can hardly fulfill the exponentially-growing resource requirements when applied to large quantum systems. As pointed out by Feynman, this restriction is intrinsic to all computational models based on classical physics. Recently, the rapid advancement of trapped-ion technologies has opened new possibilities for quantum control and quantum simulations. Here, we present an efficient toolkit that exploits both the internal and motional degrees of freedom of trapped ions for solving problems in quantum chemistry, including molecular electronic structure, molecular dynamics, and vibronic coupling. We focus on applications that go beyond the capacity of classical computers, but may be realizable on state-of-the-art trapped-ion systems. These results allow us to envision a new paradigm of quantum chemistry that shifts from the current transistor to a near-future trapped-ion-based technology.

M. -H. Yung; J. Casanova; A. Mezzacapo; J. McClean; L. Lamata; A. Aspuru-Guzik; E. Solano

2013-07-16T23:59:59.000Z

222

A TRANSISTORIZED ALPHA COUNTER FOR AN ALPHA GAUGE  

SciTech Connect

A transistorized instrument prototype was designed and constructed to replace a vacuum-tube instrument in an alpha gauge, which measures the thickness density of gases. The instrument amplifies, shapes, discriminates, and counts alpha pulses from a Au-Si surface-barrier detector exposed to an alpha source in a gas-filled chamber. The circuit consists of a charge-sensitive preamplifier, a main amplifier with pulse clipping, a Schmitt trigger, a diode pump, and a count rate meter. Preliminary tests gave results comparable to the vacuum-tube instrument. Accuracy of counting was within 10% for 0.5- to 10-Mev alpha particles emitted at a maximum rate of 10/sup 6 per sec. The instrument was stable at 25 to 55 deg C, is small and portable, and costs less than 0. An infinitely thick, alpha source that will give a high count rate is being constructed for final tests. (auth)

Kopp, M.C.

1962-08-23T23:59:59.000Z

223

Millimeter-wave GaN high electron mobility transistors and their integration with silicon electronics  

E-Print Network (OSTI)

In spite of the great progress in performance achieved during the last few years, GaN high electron mobility transistors (HEMTs) still have several important issues to be solved for millimeter-wave (30 ~ 300 GHz) applications. ...

Chung, Jinwook W. (Jinwook Will)

2011-01-01T23:59:59.000Z

224

RF Power Degradation of GaN High Electron Mobility Transistors  

E-Print Network (OSTI)

We have developed a versatile methodology to systematically investigate the RF reliability of GaN High-Electron Mobility Transistors. Our technique utilizes RF and DC figures of merit to diagnose the degradation of RF ...

Joh, Jungwoo

225

Bias-Stress Effect in Pentacene Organic Thin-Film Transistors  

E-Print Network (OSTI)

The effects of bias stress in integrated pentacene organic transistors are studied and modeled for different stress conditions. It is found that the effects of bias stress can be expressed in terms of the shift in applied ...

Ryu, Kevin K.

226

Electric field engineering in GaN high electron mobility transistors  

E-Print Network (OSTI)

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

227

The gated community: residents' crime experience and perception of safety behind gates and fences in the urban area  

E-Print Network (OSTI)

The primary purpose of the study is to explore the connections between residents' perception of safety and their crime experience, and the existence of gates and fences in multi-family housing communities in urban areas. For cultivating discussions regarding the connections between gated community territory, safety, and crime experience, this study classifies apartment communities according to the conditions of their gating and fencing: gated communities, perceived gated communities, and non-gated communities. It investigates residents' perceptions of safety and their opinions and managers' opinions on gated territory and safety. The major findings from the surveys are: Residents felt safer in gated communities than in non-gated communities. Residents' perceptions of safety in perceived gated communities were similar to those in gated communities. These results reflected the territoriality issue for improving residents' perceived safety in apartment communities. Residents' perceptions of safety in architectural spaces showed that residents' fear of crime in public and semi-public spaces must first be addressed in order to ease residents' fear of crime in an apartment territory. The reality of crime in apartment communities differed from residents' perceptions of safety. Gated community residents reported a higher crime rate than nongated community residents. In addition to gates and fences that define apartment territory, such elements as patrol services, bright lighting, direct emergency buttons, and visual access to the local police were indicated as the important factors for improving residents' perceived safety. Some architectural factors and demographic factors exhibited statistical correlations with residents' perceptions of safety. Those were types of communities, dwelling floor level, educational attainment, family size, and annual income. For predicting residents' perceptions of safety in their apartment territory, multiple regression models were obtained and residents' neighborhood attachment was also considered in the multiple regression models. The apartment community managers emphasized direct maintenance issues and residents' social contact with neighbors for improving residents' perceived safety. In conclusion, design and managerial suggestions for safer communities were proposed. For creating safer multi-family housing communities, territoriality and related architectural conditions and managerial considerations and residents' participations are emphasized. The concept of community programming for safer multi-family housing communities is suggested.

Kim, Suk Kyung

2006-08-01T23:59:59.000Z

228

Low Voltage, Low Power Organic Light Emitting Transistors for AMOLED Displays  

SciTech Connect

Low voltage, low power dissipation, high aperture ratio organic light emitting transistors are demonstrated. The high level of performance is enabled by a carbon nanotube source electrode that permits integration of the drive transistor and the organic light emitting diode into an efficient single stacked device. Given the demonstrated performance, this technology could break the technical logjam holding back widespread deployment of active matrix organic light emitting displays at flat panel screen sizes.

McCarthy, M. A. [University of Florida, Gainesville; Liu, B. [University of Florida, Gainesville; Donoghue, E. P. [University of Florida, Gainesville; Kravchenko, Ivan I [ORNL; Kim, D. Y. [University of Florida, Gainesville; Reynolds, J. R. [University of Florida, Gainesville; So, Franky [University of Florida, Gainesville; Rinzler, A. G. [University of Florida, Gainesville

2011-01-01T23:59:59.000Z

229

Furan Substituted Diketopyrrolopyrrole and Thienylenevinylene Based Low Band Gap Copolymer for High Mobility Organic Thin Film Transistors  

Science Conference Proceedings (OSTI)

A novel solution processable donor-acceptor (D-A) based low band gap polymer semiconductor poly{l_brace}3,6-difuran-2-yl-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione-alt-thienylenevinylene{r_brace} (PDPPF-TVT), was designed and synthesized by a Pd-catalyzed Stille coupling route. An electron deficient furan based diketopyrrolopyrrole (DPP) block and electron rich thienylenevinylene (TVT) donor moiety were attached alternately in the polymer backbone. The polymer exhibited good solubility, film forming ability and thermal stability. The polymer exhibits wide absorption bands from 400 nm to 950 nm (UV-vis-NIR region) with absorption maximum centered at 782 nm in thin film. The optical band gap (E{sub g}{sup opt}) calculated from the polymer film absorption onset is around 1.37 eV. The {pi}-energy band level (ionization potential) calculated by photoelectron spectroscopy in air (PESA) for PDPPF-TVT is around 5.22 eV. AFM and TEM analyses of the polymer reveal nodular terrace morphology with optimized crystallinity after 200 C thermal annealing. This polymer exhibits p-channel charge transport characteristics when used as the active semiconductor in organic thin-film transistor (OTFT) devices. The highest hole mobility of 0.13 cm{sup 2} V{sup -1} s{sup -1} is achieved in bottom gate and top-contact OTFT devices with on/off ratios in the range of 10{sup 6}-10{sup 7}. This work reveals that the replacement of thiophene by furan in DPP copolymers exhibits such a high mobility, which makes DPP furan a promising block for making a wide range of promising polymer semiconductors for broad applications in organic electronics.

Sonar, Prashant [Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology, and Research; Zhuo, Jing-Mei [Department of Physics, National University of Singapore; Zhao, Li-Hong [National University of Singapore; Lim, Kai-Ming [Department of Physics, National University of Singapore; Chen, Jihua [ORNL; Rondinone, Adam Justin [ORNL; Singh, Samarendra [Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology, and Research; Chua, Lay-Lay [National University of Singapore; Ho, Peter [National University of Singapore; Dodabalapur, Ananth [National University of Singapore

2012-01-01T23:59:59.000Z

230

MaGate Simulator: A Simulation Environment for a Decentralized Grid Scheduler  

Science Conference Proceedings (OSTI)

This paper presents a simulator for of a decentralized modular grid scheduler named MaGate. MaGate's design emphasizes scheduler interoperability by providing intelligent scheduling serving the grid community as a whole. Each MaGate scheduler instance ... Keywords: Grid Scheduling, MaGate Simulator, Simulation, SmartGRID

Ye Huang; Amos Brocco; Michele Courant; Beat Hirsbrunner; Pierre Kuonen

2009-08-01T23:59:59.000Z

231

Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal  

E-Print Network (OSTI)

, 157-159 (2008). 22 W.L. Bragg, Philosophical Magazine Series 6, 40:236, 169-189 (1920). 23 N.E. Holden, Pure & Appl. Chem. 52, 2349-2384 (1979). 24 J.F. Shackelford and W. Alexander, Materials science and engineering handbook, ed. 3. (CRC...

Kiani, Ahmed; Hasko, David G.; Milne, William I.; Flewitt, Andrew J.

2013-04-15T23:59:59.000Z

232

Characterization of silicon surface preparation processes for advanced gate dielectrics  

Science Conference Proceedings (OSTI)

This paper gives a short overview of issues associated with the surface preparation of silicon surfaces for advanced gate dielectrics and the appearance and nature of the wafer surface after different chemical treatments. The main portion of the paper ...

H. F. Okorn-Schmidt

1999-05-01T23:59:59.000Z

233

The Inference of GATE Convective Rainfall from SMS-1 Imagery  

Science Conference Proceedings (OSTI)

Quantitative precipitation estimates have been made for the GARP (Global Atmospheric Research Program) Atlantic Tropical Experiment (GATE) from geosynchronous, infrared satellite imagery and a computer-automated technique that is described in ...

William L. Woodley; Cecilia G. Griffith; Joseph S. Griffin; Scott C. Stromatt

1980-04-01T23:59:59.000Z

234

Molecular Mechanisms of a Retinal Cyclic Nucleotide-Gated Channel.  

E-Print Network (OSTI)

??Cyclic nucleotide-gated (CNG) channels mediate the transduction of light signals to electrical signals in vertebrate photoreceptors. These channels are non-selective for cations and open upon (more)

Martinez-Francois, Juan R

2009-01-01T23:59:59.000Z

235

TransForum v2n4 - GATE  

NLE Websites -- All DOE Office Websites (Extended Search)

with a "real-world" industrial base made up of 16 partners (such as British Petroleum, Exxon, General Motors, and Honda). The Ohio State University (OSU) GATE program is also...

236

A Comparison of Two Satellite Rainfall Estimates for GATE  

Science Conference Proceedings (OSTI)

Rainfall estimates obtained for the GATE experiment by two satellite rainfall estimation techniques are compared for different time and space scales. The Kilonsky-Ramage technique uses polar-orbiting satellites for 1 resolution rainfall ...

Oswaldo Garcia

1981-04-01T23:59:59.000Z

237

Induction-based gate-level verification of multipliers  

Science Conference Proceedings (OSTI)

We propose a method based on unrolling the inductive definition of binary number multiplication to verify gate-level implementations of multipliers. The induction steps successively reduce the size of the multiplier under verification. Through induction, ...

Ying Tsai Chang; Kwang Ting Tim Cheng

2001-11-01T23:59:59.000Z

238

Experimental demonstration of a Hadamard gate for coherent state qubits  

SciTech Connect

We discuss and make an experimental test of a probabilistic Hadamard gate for coherent state qubits. The scheme is based on linear optical components, nonclassical resources, and the joint projective action of a photon counter and a homodyne detector. We experimentally characterize the gate for the coherent states of the computational basis by full tomographic reconstruction of the transformed output states. Based on the parameters of the experiment, we simulate the fidelity for all coherent state qubits on the Bloch sphere.

Tipsmark, Anders; Laghaout, Amine; Andersen, Ulrik L. [Department of Physics, Technical University of Denmark, Fysikvej, DK-2800 Kgs. Lyngby (Denmark); Dong, Ruifang [Quantum Frequency Standards Division, National Time Service Center (NTSC), Chinese Academy of Sciences, 710600 Lintong, Shaanxi (China); Department of Physics, Technical University of Denmark, Fysikvej, DK-2800 Kgs. Lyngby (Denmark); Marek, Petr [Department of Optics, Palacky University, 17. listopadu 12, CZ-77146 Olomouc (Czech Republic); Jezek, Miroslav [Department of Optics, Palacky University, 17. listopadu 12, CZ-77146 Olomouc (Czech Republic); Department of Physics, Technical University of Denmark, Fysikvej, DK-2800 Kgs. Lyngby (Denmark)

2011-11-15T23:59:59.000Z

239

Final Technical GATE Report, 1998-2006  

SciTech Connect

In 1998, the U.S. Department of Energy (DOE) funded 10 proposals to establish graduate automotive technology education (GATE) centers of excellence at nine universities, each addressing a specific technological area. The University of California, Davis was chosen for two centers: Fuel Cell Center and Hybrid-Electric Vehicle Design Center (power drivetrains and control strategies). This report is specific to the Fuel Cell Center only, which was housed at the UC Davis Institute of Transportation Studies (ITS-Davis). ITS-Davis created the Fuel Cell Vehicle Center, with the following goals: (1) create an interdisciplinary fuel cell vehicle curriculum that cuts across engineering, the physical sciences and, to a lesser extent, the social sciences; (2) expand and strengthen the then-emerging multidisciplinary fuel cell vehicle research program; (3) strengthen links with industry; (4) create an active public outreach program; and (5) serve as neutral ground for interactions between academia, the auto, energy, and technology industries, government, and public-interest non-governmental organizations. At the time of proposal, the Center had a solid track record in fuel cell research, strong connections with industry, strong campus support, a core group of distinguished and motivated faculty, and an established institutional foundation for fuel cell vehicle research and education.

GATE Fuel Cell Vehicle Center

2006-09-30T23:59:59.000Z

240

Gated integrator with signal baseline subtraction  

DOE Patents (OSTI)

An ultrafast, high precision gated integrator includes an opamp having differential inputs. A signal to be integrated is applied to one of the differential inputs through a first input network, and a signal indicative of the DC offset component of the signal to be integrated is applied to the other of the differential inputs through a second input network. A pair of electronic switches in the first and second input networks define an integrating period when they are closed. The first and second input networks are substantially symmetrically constructed of matched components so that error components introduced by the electronic switches appear symmetrically in both input circuits and, hence, are nullified by the common mode rejection of the integrating opamp. The signal indicative of the DC offset component is provided by a sample and hold circuit actuated as the integrating period begins. The symmetrical configuration of the integrating circuit improves accuracy and speed by balancing out common mode errors, by permitting the use of high speed switching elements and high speed opamps and by permitting the use of a small integrating time constant. The sample and hold circuit substantially eliminates the error caused by the input signal baseline offset during a single integrating window.

Wang, Xucheng (Lisle, IL)

1996-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Gated integrator with signal baseline subtraction  

DOE Patents (OSTI)

An ultrafast, high precision gated integrator includes an opamp having differential inputs. A signal to be integrated is applied to one of the differential inputs through a first input network, and a signal indicative of the DC offset component of the signal to be integrated is applied to the other of the differential inputs through a second input network. A pair of electronic switches in the first and second input networks define an integrating period when they are closed. The first and second input networks are substantially symmetrically constructed of matched components so that error components introduced by the electronic switches appear symmetrically in both input circuits and, hence, are nullified by the common mode rejection of the integrating opamp. The signal indicative of the DC offset component is provided by a sample and hold circuit actuated as the integrating period begins. The symmetrical configuration of the integrating circuit improves accuracy and speed by balancing out common mode errors, by permitting the use of high speed switching elements and high speed opamps and by permitting the use of a small integrating time constant. The sample and hold circuit substantially eliminates the error caused by the input signal baseline offset during a single integrating window. 5 figs.

Wang, X.

1996-12-17T23:59:59.000Z

242

Multifunctional Oxides  

Science Conference Proceedings (OSTI)

3) Electric, ferroelectric, magnetic and photonic properties of oxides 4) Theoretical modeling of epitaxial growth, interfaces and microstructures 5) Composition...

243

Ambipolar charge transport in microcrystalline silicon thin-film transistors  

Science Conference Proceedings (OSTI)

Hydrogenated microcrystalline silicon ({mu}c-Si:H) is a promising candidate for thin-film transistors (TFTs) in large-area electronics due to high electron and hole charge carrier mobilities. We report on ambipolar TFTs based on {mu}c-Si:H prepared by plasma-enhanced chemical vapor deposition at temperatures compatible with flexible substrates. Electrons and holes are directly injected into the {mu}c-Si:H channel via chromium drain and source contacts. The TFTs exhibit electron and hole charge carrier mobilities of 30-50 cm{sup 2}/V s and 10-15 cm{sup 2}/V s, respectively. In this work, the electrical characteristics of the ambipolar {mu}c-Si:H TFTs are described by a simple analytical model that takes the ambipolar charge transport into account. The analytical expressions are used to model the transfer curves, the potential and the net surface charge along the channel of the TFTs. The electrical model provides insights into the electronic transport of ambipolar {mu}c-Si:H TFTs.

Knipp, Dietmar; Marinkovic, M. [Electronic Devices and Nanophotonics Laboratory, Jacobs University Bremen, 28759 Bremen (Germany); Chan, Kah-Yoong [IEF5-Photovoltaics, Research Center Juelich, 52425 Juelich (Germany); Faculty of Engineering, Multimedia University, Cyberjaya, 63100 Selangor (Malaysia); Gordijn, Aad [IEF5-Photovoltaics, Research Center Juelich, 52425 Juelich (Germany); Stiebig, Helmut [IEF5-Photovoltaics, Research Center Juelich, 52425 Juelich (Germany); Malibu Solar GmbH and Co. KG, 33609 Bielefeld (Germany)

2011-01-15T23:59:59.000Z

244

Free-surface flow simulations for discharge-based operation of hydraulic structure gates  

E-Print Network (OSTI)

We combine non-hydrostatic flow simulations of the free surface with a discharge model based on elementary gate flow equations for decision support in operation of hydraulic structure gates. A water level-based gate control used in most of today's general practice does not take into account the fact that gate operation scenarios producing similar total discharged volumes and similar water levels may have different local flow characteristics. Accurate and timely prediction of local flow conditions around hydraulic gates is important for several aspects of structure management: ecology, scour, flow-induced gate vibrations and waterway navigation. The modelling approach is described and tested for a multi-gate sluice structure regulating discharge from a river to the sea. The number of opened gates is varied and the discharge is stabilized with automated control by varying gate openings. The free-surface model was validated for discharge showing a correlation coefficient of 0.994 compared to experimental data. A...

Erdbrink, C D; Sloot, P M A

2012-01-01T23:59:59.000Z

245

Improving the performance of the organic thin-film transistors with thin insulating lithium fluoride buffer layer  

Science Conference Proceedings (OSTI)

The pentacene-based organic thin-film transistors (OTFTs) with a thin insulating lithium fluoride (LiF) buffer layer between the pentacene and source/drain electrodes were fabricated. Compared with conventional OTFTs, the introduction of the buffer layer ... Keywords: OTFT, Organic thin-film transistor, Pentacene

Wei Hu; Yi Zhao; Jingying Hou; Chunsheng Ma; Shiyong Liu

2007-04-01T23:59:59.000Z

246

Thin film transistors and solar cells. (Latest citations from the US Patent bibliographic file with exemplary claims). Published Search  

Science Conference Proceedings (OSTI)

The bibliography contains citations of selected patents concerning the fabrication and application methods of thin film transistors and thin film solar cells. Methods of manufacturing thin film transistors for use in electronic display devices are presented. Techniques for continuously producing durable and reliable thin film solar cells are discussed. (Contains 250 citations and includes a subject term index and title list.)

NONE

1995-01-01T23:59:59.000Z

247

Thin film transistors and solar cells. (Latest citations from the US Patent Bibliographic File with Exemplary Claims). Published Search  

SciTech Connect

The bibliography contains citations of selected patents concerning the fabrication and application methods of thin film transistors and thin film solar cells. Methods of manufacturing thin film transistors for use in electronic display devices are presented. Techniques for continuously producing durable and reliable thin film solar cells are discussed. (Contains 250 citations and includes a subject term index and title list.)

Not Available

1993-11-01T23:59:59.000Z

248

Entangling unitary gates on distant qubits with ancilla feedback  

E-Print Network (OSTI)

By using an ancilla qubit as a mediator, two distant qubits can undergo a non-local entangling unitary operation. This is desirable for when attempting to scale up or distribute quantum computation by combining fixed static local sets of qubits with ballistic mediators. Using a model driven by measurements on the ancilla, it is possible to generate a maximally entangling CZ gate while only having access to a less entangling gate between the pair qubits and the ancilla. However this results in a stochastic process of generating control phase rotation gates where the expected time for success does not correlate with the entangling power of the connection gate. We explore how one can use feedback into the preparation and measurement parameters of the ancilla to speed up the expected time to generate a CZ gate between a pair of separated qubits and to leverage stronger coupling strengths for faster times. Surprisingly, by choosing an appropriate strategy, control of a binary discrete parameter achieves comparable speed up to full continuous control of all degrees of freedom of the ancilla.

Kerem Halil Shah; Daniel K. L. Oi

2013-11-14T23:59:59.000Z

249

SF{sub 6}/O{sub 2} plasma effects on silicon nitride passivation of AlGaN/GaN high electron mobility transistors  

SciTech Connect

The effects of various plasma and wet chemical surface pretreatments on the electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) passivated with plasma-deposited silicon nitride were investigated. The results of pulsed IV measurements show that samples exposed to various SF{sub 6}/O{sub 2} plasma treatments have markedly better rf dispersion characteristics compared to samples that were either untreated or treated in wet buffered oxide etch prior to encapsulation. The improvement in these characteristics correlates with the reduction of carbon on the semiconductor surface as measured with x-ray photoelectron spectroscopy. HEMT channel sheet resistance was also affected by varying silicon nitride deposition parameters.

Meyer, David J.; Flemish, Joseph R.; Redwing, Joan M. [Materials Science and Engineering Department, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2006-11-27T23:59:59.000Z

250

Beyond the Transistor | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Beyond the Transistor Beyond the Transistor Discovery & Innovation Stories of Discovery & Innovation Brief Science Highlights SBIR/STTR Highlights Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 10.12.11 Beyond the Transistor EFRC researchers fabricate a novel device for channeling light. Print Text Size: A A A Subscribe FeedbackShare Page Click to enlarge photo. Enlarge Photo Schematic of a GaAs 3D photonic crystal Image courtesy of the University of Illinois at Urbana-Champaign Schematic of a GaAs 3D photonic crystal (blue) containing an InGaAs light-emitting layer (red). The structure is lithographically patterned into the form of a cylindrical mesa with a ring electrode on the top surface (gold).

251

An optical fusion gate for W-states  

E-Print Network (OSTI)

We introduce a simple optical gate to fuse arbitrary size polarization entangled W-states to prepare larger W-states. The gate requires a polarizing beam splitter (PBS), a half wave plate (HWP) and two photon detectors. We study numerically and analytically the necessary resource consumption for preparing larger W-states by fusing smaller ones with the proposed fusion gate. We show analytically that resource requirement scales at most sub-exponentially with the increasing size of the state to be prepared. We numerically determine the resource cost for fusion without recycling where W-states of arbitrary size can be optimally prepared. Moreover, we introduce another strategy which is based on recycling and outperforms the optimal strategy for non-recycling case.

Sahin Kaya Ozdemir; Eiji Matsunaga; Toshiyuki Tashima; Takashi Yamamoto; Masato Koashi; Nobuyuki Imoto

2011-03-11T23:59:59.000Z

252

Four-Dimensional Analysis Experiment During the Gate Period Part II  

Science Conference Proceedings (OSTI)

The GATE analysis was repeated utilizing the full GATE data set in the delayed mode and a revised four-dimensional analysis procedure. The resulting maps wore compared with maps of other author. Based on the new analysis, macroscale circulation ...

K. Miyakoda; J. Sheldon; J. Sirutis

1982-03-01T23:59:59.000Z

253

Developing Reusable and Robust Language Processing Components for Information Systems using GATE  

Science Conference Proceedings (OSTI)

In this paper we present GATE, an architecture and a graphical development environment which enables users to develop and deploy HLT applications in a robust fashion. GATE also provides reusable, extendable, and customisable language processing modules ...

Kalina Bontcheva; Hamish Cunningham; Diana Maynard; Valentin Tablan; Horacio Saggion

2002-09-01T23:59:59.000Z

254

Workfunction Tuning of n-Channel MOSFETs Using Interfacial Yttrium Layer in Fully Silicided Nickel Gate  

E-Print Network (OSTI)

Continual scaling of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-45 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...

Yu, Hongpeng

255

Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaNGaN heterostructure field-effect transistor  

E-Print Network (OSTI)

. Redwing Epitronics/ATMI, Phoenix, Arizona 85027 Received 14 December 1999; accepted for publication 21

Yu, Edward T.

256

Embedded automatic parking management system based on RFID and existed gate system integration  

Science Conference Proceedings (OSTI)

In this paper, an Embedded Automatic Parking Management System (EAPMS) that integrates the existed gate system and RFID is proposed. This system includes Embedded Gate Hardware, Gate-PC Controller, RFID System, Parking Management Platform. Most systems ... Keywords: RFID, embedded, parking management, system integration

Ming-Shen Jian; Kuen Shiuh Yang; Chung-Lun Lee; Nan-Yuan Huang

2008-07-01T23:59:59.000Z

257

Modular RFID parking management system based on existed gate system integration  

Science Conference Proceedings (OSTI)

In this paper, a Modular RFID Parking Management System that integrates the existed gate system and RFID is proposed. This system includes Modular Gate-PC Controller and Embedded Gate Hardware, RFID System, Modular Parking Management Platform. Most systems ... Keywords: RFID, embedded, modular, parking management, system integration

Ming-Shen Jian; Kuen Shiuh Yang; Chung-Lun Lee

2008-06-01T23:59:59.000Z

258

MaGate: An Interoperable, Decentralized and Modular High-Level Grid Scheduler  

Science Conference Proceedings (OSTI)

This work presents the design and architecture of a decentralized grid scheduler named MaGate, which is developed within the SmartGRID project and focuses on grid scheduler interoperation. The MaGate scheduler is modular structured, and emphasizes the ... Keywords: Grid Computing, MaGate Scheduler, Meta-Scheduling, Scheduling, SmartGRID

Ye Huang; Amos Brocco; Michele Courant; Beat Hirsbrunne; Pierre Kuonen

2010-07-01T23:59:59.000Z

259

Integrated Power-Gating and State Assignment for Low Power FSM Synthesis  

Science Conference Proceedings (OSTI)

Power-gating is an effective technique for reducing standby leakage power and dynamic power. In power-gating one can shut off the power supply to sections of logic block while keeping other logic blocks active. However, careful design is required to ... Keywords: Low power synthesis, Power-gating, FSM decomposition, State encoding, Genetic Algorithm

Sambhu Nath Pradhan; M. Tilak Kumar; Santanu Chattopadhyay

2008-04-01T23:59:59.000Z

260

Low power interconnect design for fpgas with bidirectional wiring using nanocrystal floating gate devices (abstract only)  

Science Conference Proceedings (OSTI)

New architectures for the switch box and connection block are proposed for use in an energy efficient field programmable gate array (FPGA) with bidirectional wiring. Power-hungry SRAMs are replaced by non-volatile nanocrystal floating gate (NCFG) devices ... Keywords: bidirectional wiring, connection block, floating gate, fpga, high speed, low power, nanocrystal, switch box

Daniel Schinke; Wallace Shep Pitts; Neil Di Spigna; Paul Franzon

2011-02-01T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Transistors for Electric Motor Drives: High-Performance GaN HEMT Modules for Agile Power Electronics  

SciTech Connect

ADEPT Project: Transphorm is developing transistors with gallium nitride (GaN) semiconductors that could be used to make cost-effective, high-performance power converters for a variety of applications, including electric motor drives which transmit power to a motor. A transistor acts like a switch, controlling the electrical energy that flows around an electrical circuit. Most transistors today use low-cost silicon semiconductors to conduct electrical energy, but silicon transistors dont operate efficiently at high speeds and voltage levels. Transphorm is using GaN as a semiconductor material in its transistors because GaN performs better at higher voltages and frequencies, and it is more energy efficient than straight silicon. However, Transphorm is using inexpensive silicon as a base to help keep costs low. The company is also packaging its transistors with other electrical components that can operate quickly and efficiently at high power levelsincreasing the overall efficiency of both the transistor and the entire motor drive.

None

2010-09-01T23:59:59.000Z

262

Temperature-controlled molecular depolarization gates in nuclear magnetic resonance  

SciTech Connect

Down the drain: Cryptophane cages in combination with selective radiofrequency spin labeling can be used as molecular 'transpletor' units for transferring depletion of spin polarization from a hyperpolarized 'source' spin ensemble to a 'drain' ensemble. The flow of nuclei through the gate is adjustable by the ambient temperature, thereby enabling controlled consumption of hyperpolarization.

Schroder, Leif; Schroder, Leif; Chavez, Lana; Meldrum, Tyler; Smith, Monica; Lowery, Thomas J.; E. Wemmer, David; Pines, Alexander

2008-02-27T23:59:59.000Z

263

Towards practical biomolecular computers using microfluidic deoxyribozyme logic gate networks  

Science Conference Proceedings (OSTI)

We propose a way of implementing a biomolecular computer in the laboratory using deoxyribozyme logic gates inside a microfluidic reaction chamber. We build upon our previous work, which simulated the operation of a flip-flop and an oscillator based on ...

Joseph Farfel; Darko Stefanovic

2005-06-01T23:59:59.000Z

264

Quantification of Priority-OR gates in temporal fault trees  

Science Conference Proceedings (OSTI)

Fault Tree Analysis has been used in reliability engineering for many decades and has seen various modifications to enable it to analyse fault trees with dynamic and temporal gates so it can incorporate sequential failure in its analysis. Pandora is ... Keywords: Markov chains, Monte Carlo, Pandora, dynamic fault trees, fault trees, safety

Ernest Edifor; Martin Walker; Neil Gordon

2012-09-01T23:59:59.000Z

265

Experimental Realization of Non-Abelian Geometric Gates  

E-Print Network (OSTI)

The geometric aspects of quantum mechanics are underlined most prominently by the concept of geometric phases, which are acquired whenever a quantum system evolves along a closed path in Hilbert space. The geometric phase is determined only by the shape of this path and is -- in its simplest form -- a real number. However, if the system contains degenerate energy levels, matrix-valued geometric phases, termed non-abelian holonomies, can emerge. They play an important role for the creation of synthetic gauge fields in cold atomic gases and the description of non-abelian anyon statistics. Moreover, it has been proposed to exploit non-abelian holonomic gates for robust quantum computation. In contrast to abelian geometric phases, non-abelian ones have been observed only in nuclear quadrupole resonance experiments with a large number of spins and without fully characterizing the geometric process and its non-commutative nature. Here, we realize non-abelian holonomic quantum operations on a single superconducting artificial three-level atom by applying a well controlled two-tone microwave drive. Using quantum process tomography, we determine fidelities of the resulting non-commuting gates exceeding 95 %. We show that a sequence of two paths in Hilbert space traversed in different order yields inequivalent transformations, which is an evidence for the non-abelian character of the implemented holonomic quantum gates. In combination with two-qubit operations, they form a universal set of gates for holonomic quantum computation.

A. A. Abdumalikov; J. M. Fink; K. Juliusson; M. Pechal; S. Berger; A. Wallraff; S. Filipp

2013-04-18T23:59:59.000Z

266

Advanced Gate Drive for the SNS High Voltage Converter Modulator  

SciTech Connect

SLAC National Accelerator Laboratory is developing a next generation H-bridge switch plate [1], a critical component of the SNS High Voltage Converter Modulator [2]. As part of that effort, a new IGBT gate driver has been developed. The drivers are an integral part of the switch plate, which are essential to ensuring fault-tolerant, high-performance operation of the modulator. The redesigned driver improves upon the existing gate drive in several ways. The new gate driver has improved fault detection and suppression capabilities; suppression of shoot-through and over-voltage conditions, monitoring of dI/dt and Vce(sat) for fast over-current detection and suppression, and redundant power isolation are some of the added features. In addition, triggering insertion delay is reduced by a factor of four compared to the existing driver. This paper details the design and performance of the new IGBT gate driver. A simplified schematic and description of the construction are included. The operation of the fast over-current detection circuits, active IGBT over-voltage protection circuit, shoot-through prevention circuitry, and control power isolation breakdown detection circuit are discussed.

Nguyen, M.N.; Burkhart, C.; Kemp, M.A.; /SLAC; Anderson, D.E.; /Oak Ridge

2009-05-07T23:59:59.000Z

267

Tropical Squall Lines over the Eastern Atlantic during GATE  

Science Conference Proceedings (OSTI)

During the entire period of GATE, all oceanic squall lines over the A/B array developed in the vicinity of the near-equatorial convergence zone (NECZ) when a strong midtropospheric easterly jet along the leading and southern borders of a Saharan ...

Yi-Leng Chen

1985-11-01T23:59:59.000Z

268

High mobility CMOS transistors on Si/SiGe heterostructure channels  

Science Conference Proceedings (OSTI)

We have demonstrated high mobility CMOS transistors on Si/SiGe heterostructure channels selectively grown on a Si (100) substrate. Electron and hole mobility is enhanced simultaneously on a single Si/SiGe heterostructure channel by confining electrons ... Keywords: Hetero-epitaxy, Hetero-structure, High mobility channel, SiGe CMOS

Jungwoo Oh; Kanghoon Jeon; Se-Hoon Lee; Jeff Huang; P. Y. Hung; Injo Ok; Barry Sassman; Dae-Hong Ko; Paul Kirsch; Raj Jammy

2012-09-01T23:59:59.000Z

269

Effect of trapping on the critical voltage for degradation in gan high electron mobility transistors  

E-Print Network (OSTI)

We have performed V[subscript DS] = 0 V and OFF-state step-stress experiments on GaN-on-Si and GaN-on-SiC high electron mobility transistors under UV illumination and in the dark. We have found that for both stress conditions, ...

Demirtas, Sefa

270

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors  

E-Print Network (OSTI)

In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

Lu, Bin

271

Fabrication of single electron transistors in multi-wall carbon nanotubes using Ar beam irradiation  

Science Conference Proceedings (OSTI)

The Ar beam with an acceleration voltage of 300 V has been irradiated to multi-wall carbon nanotubes (MWNTs) through a narrow opening of the resist, in order to form a tunnel barrier. The tunnel resistance could be set by appropriate dose, in the range ... Keywords: Ar beam, carbon nanotubes, coulomb blockade, quantum dots, single electron transistor

K. Ishibashi; M. Suzuki; D. Tsuya; Y. Aoyagi

2003-06-01T23:59:59.000Z

272

Semi-analytical model for schottky-barrier carbon nanotube and graphene nanoribbon transistors  

Science Conference Proceedings (OSTI)

This paper describes a physics-based semi-analytical model for Schottky-barrier carbon nanotube (CNT) and graphene nanoribbon (GNR) transistors. The model includes the treatment of (i) both tunneling and thermionic currents, (ii) ambipolar conduction, ... Keywords: carbon nanotubes, graphene nanoribbons, models, schottky-barrier

Xuebei Yang; Gianluca Fiori; Giuseppe Iannaccone; Kartik Mohanram

2010-05-01T23:59:59.000Z

273

Modeling of the Output and Transfer Characteristics of Graphene Field-Effect Transistors  

Science Conference Proceedings (OSTI)

We obtain the output and transfer characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation. Closed expressions ...

Brett W. Scott; Jean-Pierre Leburton

2011-09-01T23:59:59.000Z

274

Transmission gates combined with level-restoring CMOS gates reduce glitches in low-power low-frequency multipliers  

Science Conference Proceedings (OSTI)

Various 16-bit multiplier architectures are compared in terms of dissipated energy, propagation delay, energy-delay product (EDP), and area occupation, in view of low-power low-voltage signal processing for low-frequency applications. A novel practical ... Keywords: arithmetic, glitch, low frequency, low power, multiplier, switching activity, transmission gate

Flavio Carbognani; Felix Buergin; Norbert Felber; Hubert Kaeslin; Wolfgang Fichtner

2008-07-01T23:59:59.000Z

275

C-V characteristics of epitaxial germanium metal-oxide-semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric  

Science Conference Proceedings (OSTI)

Epitaxial germanium metal-oxide-semiconductor capacitors (MOSCAP) were fabricated on GaAs substrate using atomic layer deposited Al"2O"3 gate dielectric with surface treatments including pure HF and HF plus rapid thermal oxidation (RTO). The electrical ... Keywords: ALD Al2O3, CMOS integration, Ge MOSCAP, Ge epitaxial film, RTO

Shih Hsuan Tang; Chien I. Kuo; Hai Dang Trinh; Mantu Hudait; Edward Yi Chang; Ching Yi Hsu; Yung Hsuan Su; Guang-Li Luo; Hong Quan Nguyen

2012-09-01T23:59:59.000Z

276

Phase gate of one superconducting qubit simultaneously controlling n qubits in a cavity  

E-Print Network (OSTI)

We propose how to realize a three-step controlled-phase gate of one superconducting qubit simultaneously controlling n qubits selected from N qubits in a cavity (1nN). The operation time of this gate is independent of the number n of qubits involved in the gate operation. This phase gate controlling at once n qubits is insensitive to the initial state of the cavity mode and can be used to produce an analogous CNOT gate simultaneously acting on n qubits.

Chui-Ping Yang; Yu-xi Liu; Franco Nori

2009-07-24T23:59:59.000Z

277

Structure of the gating ring from the human large-conductance Ca[superscript 2+]-gated K[superscript +] channel  

SciTech Connect

Large-conductance Ca{sup 2+}-gated K{sup +} (BK) channels are essential for many biological processes such as smooth muscle contraction and neurotransmitter release. This group of channels can be activated synergistically by both voltage and intracellular Ca{sup 2+}, with the large carboxy-terminal intracellular portion being responsible for Ca{sup 2+} sensing. Here we present the crystal structure of the entire cytoplasmic region of the human BK channel in a Ca{sup 2+}-free state. The structure reveals four intracellular subunits, each comprising two tandem RCK domains, assembled into a gating ring similar to that seen in the MthK channel and probably representing its physiological assembly. Three Ca{sup 2+} binding sites including the Ca{sup 2+} bowl are mapped onto the structure based on mutagenesis data. The Ca{sup 2+} bowl, located within the second RCK domain, forms an EF-hand-like motif and is strategically positioned close to the assembly interface between two subunits. The other two Ca{sup 2+} (or Mg{sup 2+}) binding sites, Asp367 and Glu374/Glu399, are located on the first RCK domain. The Asp367 site has high Ca{sup 2+} sensitivity and is positioned in the groove between the amino- and carboxy-terminal subdomains of RCK1, whereas the low-affinity Mg{sup 2+}-binding Glu374/Glu399 site is positioned on the upper plateau of the gating ring and close to the membrane. Our structure also contains the linker connecting the transmembrane and intracellular domains, allowing us to dock a voltage-gated K{sup +} channel pore of known structure onto the gating ring with reasonable accuracy and generate a structural model for the full BK channel.

Wu, Yunkun; Yang, Yi; Ye, Sheng; Jiang, Youxing (Zhejiang); (UTSMC)

2010-11-12T23:59:59.000Z

278

A real-time respiration position based passive breath gating equipment for gated radiotherapy: A preclinical evaluation  

Science Conference Proceedings (OSTI)

Purpose: To develop a passive gating system incorporating with the real-time position management (RPM) system for the gated radiotherapy. Methods: Passive breath gating (PBG) equipment, which consists of a breath-hold valve, a controller mechanism, a mouthpiece kit, and a supporting frame, was designed. A commercial real-time positioning management system was implemented to synchronize the target motion and radiation delivery on a linear accelerator with the patient's breathing cycle. The respiratory related target motion was investigated by using the RPM system for correlating the external markers with the internal target motion while using PBG for passively blocking patient's breathing. Six patients were enrolled in the preclinical feasibility and efficiency study of the PBG system. Results: PBG equipment was designed and fabricated. The PBG can be manually triggered or released to block or unblock patient's breathing. A clinical workflow was outlined to integrate the PBG with the RPM system. After implementing the RPM based PBG system, the breath-hold period can be prolonged to 15-25 s and the treatment delivery efficiency for each field can be improved by 200%-400%. The results from the six patients showed that the diaphragm motion caused by respiration was reduced to less than 3 mm and the position of the diaphragm was reproducible for difference gating periods. Conclusions: A RPM based PBG system was developed and implemented. With the new gating system, the patient's breath-hold time can be extended and a significant improvement in the treatment delivery efficiency can also be achieved.

Hu Weigang; Xu Anjie; Li Guichao; Zhang Zhen; Housley, Dave; Ye Jinsong [Department of Radiation Oncology, Fudan University Shanghai Cancer Center and Department of Oncology, Shanghai Medical College, Fudan University, Shanghai 200032 (China); Department of Radiation Oncology, Swedish Cancer Institute, Seattle, Washington 98104 (United States)

2012-03-15T23:59:59.000Z

279

Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

Chung, Jinwook W. (Jinwook Will)

2008-01-01T23:59:59.000Z

280

Rational Design and Preparation of Organic Semiconductors for use in Field Effect Transistors and Photovoltaic Cells  

E-Print Network (OSTI)

fabrication, patterned indium-tin oxide (ITO) coated glassis usually transparent indium tin oxide (ITO), poly(3,4-

Mauldin, Clayton Edward

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Thin film transistors and solar cells. (Latest citations from the US Patent bibliographic file with exemplary claims). Published Search  

SciTech Connect

The bibliography contains citations of selected patents concerning the fabrication and application methods of thin film transistors and thin film solar cells. Methods of manufacturing thin film transistors for use in electronic display devices are presented. Techniques for continuously producing durable and reliable thin film solar cells are discussed. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

NONE

1996-04-01T23:59:59.000Z

282

South Gate, California: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Gate, California: Energy Resources Gate, California: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.954737°, -118.2120161° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.954737,"lon":-118.2120161,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

283

Ocean Gate, New Jersey: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Gate, New Jersey: Energy Resources Gate, New Jersey: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 39.926785°, -74.1337496° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.926785,"lon":-74.1337496,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

284

Synthesis of Reversible Functions Beyond Gate Count and Quantum Cost  

E-Print Network (OSTI)

Many synthesis approaches for reversible and quantum logic have been proposed so far. However, most of them generate circuits with respect to simple metrics, i.e. gate count or quantum cost. On the other hand, to physically realize reversible and quantum hardware, additional constraints exist. In this paper, we describe cost metrics beyond gate count and quantum cost that should be considered while synthesizing reversible and quantum logic for the respective target technologies. We show that the evaluation of a synthesis approach may differ if additional costs are applied. In addition, a new cost metric, namely Nearest Neighbor Cost (NNC) which is imposed by realistic physical quantum architectures, is considered in detail. We discuss how existing synthesis flows can be extended to generate optimal circuits with respect to NNC while still keeping the quantum cost small.

Robert Wille; Mehdi Saeedi; Rolf Drechsler

2010-04-26T23:59:59.000Z

285

Bayesian estimation of one-parameter qubit gates  

E-Print Network (OSTI)

We address estimation of one-parameter unitary gates for qubit systems and seek for optimal probes and measurements. Single- and two-qubit probes are analyzed in details focusing on precision and stability of the estimation procedure. Bayesian inference is employed and compared with the ultimate quantum limits to precision, taking into account the biased nature of Bayes estimator in the non asymptotic regime. Besides, through the evaluation of the asymptotic a posteriori distribution for the gate parameter and the comparison with the results of Monte Carlo simulated experiments, we show that asymptotic optimality of Bayes estimator is actually achieved after a limited number of runs. The robustness of the estimation procedure against fluctuations of the measurement settings is investigated and the use of entanglement to improve the overall stability of the estimation scheme is also analyzed in some details.

Berihu Teklu; Stefano Olivares; Matteo G A Paris

2008-12-04T23:59:59.000Z

286

GATE Center for Automotive Fuel Cell Systems at Virginia Tech  

SciTech Connect

The Virginia Tech GATE Center for Automotive Fuel Cell Systems (CAFCS) achieved the following objectives in support of the domestic automotive industry: ? Expanded and updated fuel cell and vehicle technologies education programs; ? Conducted industry directed research in three thrust areas ?? development and characterization of materials for PEM fuel cells; performance and durability modeling for PEM fuel cells; and fuel cell systems design and optimization, including hybrid and plug-in hybrid fuel cell vehicles; ? Developed MS and Ph.D. engineers and scientists who are pursuing careers related to fuel cells and automotive applications; ? Published research results that provide industry with new knowledge which contributes to the advancement of fuel cell and vehicle systems commercialization. With support from the Dept. of Energy, the CAFCS upgraded existing graduate course offerings; introduced a hands-on laboratory component that make use of Virginia Tech??s comprehensive laboratory facilities, funded 15 GATE Fellowships over a five year period; and expanded our program of industry interaction to improve student awareness of challenges and opportunities in the automotive industry. GATE Center graduate students have a state-of-the-art research experience preparing them for a career to contribute to the advancement fuel cell and vehicle technologies.

Nelson, Douglas

2011-05-31T23:59:59.000Z

287

Implementation of dynamically corrected gates for single-spin qubits  

E-Print Network (OSTI)

Precise control of an open quantum system is critical to quantum information processing, but is challenging due to inevitable interactions between the quantum system and the environment. We demonstrated experimentally at room temperature a type of dynamically corrected gates on the nitrogen-vacancy centers in diamond. The infidelity of quantum gates caused by environment nuclear spin bath is reduced from being the second-order to the sixth-order of the noise to control field ratio, which offers greater efficiency in reducing the infidelity by reducing the noise level. The decay time of the coherent oscillation driven by dynamically corrected gates is shown to be two orders of magnitude longer than the dephasing time, and is essentially limited by spin-lattice relaxation. The infidelity of DCG, which is actually constrained by the decay time, reaches $4\\times 10^{-3}$ at room temperature and is further reducible by 2-3 orders of magnitudes via lowering temperature. The greatly reduced noise dependence of infidelity and the uttermost extension of the coherent time mark an important step towards fault-tolerant quantum computation in realistic systems.

Xing Rong; Jianpei Geng; Zixiang Wang; Qi Zhang; Chenyong Ju; Fazhan Shi; Chang-Kui Duan; Jiangfeng Du

2013-09-21T23:59:59.000Z

288

Thermodynamic considerations in the stability of binary oxides for alternative gate dielectrics in complementary metal-oxide-semiconductors  

E-Print Network (OSTI)

Thermodynamic Considerations in the Stability of BinaryIn this paper, a thermodynamic analysis of the proposedS CHLOM evaluated the thermodynamic stability of a large set

Stemmer, Susanne

2004-01-01T23:59:59.000Z

289

HH8, Characterization of Thin InAlP Native Oxide Gate Dielectric ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

290

Oxidation catalyst  

DOE Patents (OSTI)

The present invention generally relates to catalyst systems and methods for oxidation of carbon monoxide. The invention involves catalyst compositions which may be advantageously altered by, for example, modification of the catalyst surface to enhance catalyst performance. Catalyst systems of the present invention may be capable of performing the oxidation of carbon monoxide at relatively lower temperatures (e.g., 200 K and below) and at relatively higher reaction rates than known catalysts. Additionally, catalyst systems disclosed herein may be substantially lower in cost than current commercial catalysts. Such catalyst systems may be useful in, for example, catalytic converters, fuel cells, sensors, and the like.

Ceyer, Sylvia T. (Cambridge, MA); Lahr, David L. (Cambridge, MA)

2010-11-09T23:59:59.000Z

291

Thin film transistors on plastic substrates with reflective coatings for radiation protection  

DOE Patents (OSTI)

Fabrication of silicon thin film transistors (TFT) on low-temperature plastic substrates using a reflective coating so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The TFT can be used in large area low cost electronics, such as flat panel displays and portable electronics such as video cameras, personal digital assistants, and cell phones.

Wolfe, Jesse D. (Fairfield, CA); Theiss, Steven D. (Woodbury, MN); Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Wickbold, Paul (Walnut Creek, CA)

2006-09-26T23:59:59.000Z

292

Utility-Scale Silicon Carbide Power Transistors: 15 kV SiC IGBT Power Modules for Grid Scale Power Conversion  

SciTech Connect

ADEPT Project: Cree is developing silicon carbide (SiC) power transistors that are 50% more energy efficient than traditional transistors. Transistors act like a switch, controlling the electrical energy that flows through an electrical circuit. Most power transistors today use silicon semiconductors to conduct electricity. However, transistors with SiC semiconductors operate at much higher temperatures, as well as higher voltage and power levels than their silicon counterparts. SiC-based transistors are also smaller and require less cooling than those made with traditional silicon power technology. Cree's SiC transistors will enable electrical circuits to handle higher power levels more efficiently, and they will result in much smaller and lighter electrical devices and power converters. Cree, an established leader in SiC technology, has already released a commercially available SiC transistor that can operate at up to 1,200 volts. The company has also demonstrated a utility-scale SiC transistor that operates at up to 15,000 volts.

None

2010-09-01T23:59:59.000Z

293

Geometric phase gate on an optical transition for ion trap quantum computation  

E-Print Network (OSTI)

We propose a geometric phase gate of two ion qubits that are encoded in two levels linked by an optical dipole-forbidden transition. Compared to hyperfine geometric phase gates mediated by electric dipole transitions, the gate has many interesting properties, such as very low spontaneous emission rates, applicability to magnetic field insensitive states, and use of a co-propagating laser beam geometry. We estimate that current technology allows for infidelities of around 10$^{-4}$.

Kim, K; Aolita, L; Hffner, H; Nebendahl, V; Blatt, R

2007-01-01T23:59:59.000Z

294

Geometric phase gate on an optical transition for ion trap quantum computation  

E-Print Network (OSTI)

We propose a geometric phase gate of two ion qubits that are encoded in two levels linked by an optical dipole-forbidden transition. Compared to hyperfine geometric phase gates mediated by electric dipole transitions, the gate has many interesting properties, such as very low spontaneous emission rates, applicability to magnetic field insensitive states, and use of a co-propagating laser beam geometry. We estimate that current technology allows for infidelities of around 10$^{-4}$.

K. Kim; C. F. Roos; L. Aolita; H. Haeffner; V. Nebendahl; R. Blatt

2007-10-21T23:59:59.000Z

295

Tide gate sensor network as a forensic tool: establishing facts during superstorm sandy  

Science Conference Proceedings (OSTI)

This study presents a Sensor Network based Tide Gate Monitoring System (SensorTGMS) that automatically collects the real-time water levels at tide gates in the New Jersey Meadowlands District where ninety percent of which lies within two feet of the ... Keywords: emergency management, flood alerts, forensic analysis, hurricane, hurricane damages, sensor network, superstorm sandy, tide gate monitoring system, water level, water quality

Soon Ae Chun; Francisco Artigas

2013-06-01T23:59:59.000Z

296

Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

- Bart Gordon, K&L Gates, Partner; Former Representative from Tennessee Stefan Heck, McKinsey & Co., Director, Leader of Global Cleantech Practice Carrie Houtman, The Dow Chemical...

297

Structural Insights into Ion Selectivity and Calcium Blockage in Cyclic Nucleotide Gated Channels.  

E-Print Network (OSTI)

??Cyclic nucleotides-gated (CNG) channels play an essential role in the visual and olfactory sensory systems and are ubiquitously expressed in a variety of neuronal and (more)

[No author

2010-01-01T23:59:59.000Z

298

U-9: Implementation of Parylene as a Low- ? Gate Dielectric Material ...  

Science Conference Proceedings (OSTI)

For a top gated FET, the graphene-dielectric interface play an important role in the FET behavior and mobility degradation mainly due to carrier scattering after...

299

Fabrication and characterization of sub-500nm channel organic field effect transistor using UV nanoimprint lithography with cheap Si-mold  

Science Conference Proceedings (OSTI)

P-type poly (3-hexylthiophene) (P3HT) organic field effect transistors (OFETs) with channel length down to 500nm were fabricated. The gold source and drain electrodes were patterned using UV-based nanoimprint lithography and a lift-off process. To reduce ... Keywords: Lift-off process, Opaque Si-mold, Organic transistor, Short channel effect, UV-nanoimprint lithography

Lichao Teng; Robert Kirchner; Matthias PlTner; Alexander TRke; Andreas Jahn; Jian He; Falk Hagemann; Wolf-Joachim Fischer

2012-09-01T23:59:59.000Z

300

Workshop on gate valve pressure locking and thermal binding  

SciTech Connect

The purpose of the Workshop on Gate Valve Pressure Locking and Thermal Binding was to discuss pressure locking and thermal binding issues that could lead to inoperable gate valves in both boiling water and pressurized water reactors. The goal was to foster exchange of information to develop the technical bases to understand the phenomena, identify the components that are susceptible, discuss actual events, discuss the safety significance, and illustrate known corrective actions that can prevent or limit the occurrence of pressure locking or thermal binding. The presentations were structured to cover U.S. Nuclear Regulatory Commission staff evaluation of operating experience and planned regulatory activity; industry discussions of specific events, including foreign experience, and efforts to determine causes and alleviate the affects; and valve vendor experience and recommended corrective action. The discussions indicated that identifying valves susceptible to pressure locking and thermal binding was a complex process involving knowledge of components, systems, and plant operations. The corrective action options are varied and straightforward.

Brown, E.J.

1995-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

GATE Air-Sea Interactions II: Numerical-Model Calculation of Regional Sea-Surface Temperature Fields Using the GATE Version III Gridded Global Data Set  

Science Conference Proceedings (OSTI)

The numerical model of air-sea interaction previously described in Brown et al. (1982), Pandolfo and Jacobs (1972) and Pandolfo (1969) is applied over a limited horizontal portion of the GATE III Gridded Global Data set (including continental ...

P. S. Brown Jr.; J. P. Pandolfo; G. D. Robinson

1982-10-01T23:59:59.000Z

302

Fault diagnosis in reversible circuits under missing-gate fault model  

Science Conference Proceedings (OSTI)

This article presents a novel technique for fault detection as well as fault location in a reversible combinational circuit under the missing gate fault model. It is shown that in an (nxn) reversible circuit implemented with k-CNOT gates, addition of ...

Hafizur Rahaman; Dipak K. Kole; Debesh K. Das; Bhargab B. Bhattacharya

2011-07-01T23:59:59.000Z

303

Event-driven gate-level simulation with GP-GPUs  

Science Conference Proceedings (OSTI)

Logic simulation is a critical component of the design tool flow in modern hardware development efforts. It is used widely -- from high-level descriptions down to gate-level ones -- to validate several aspects of the design, particularly functional correctness. ... Keywords: gate-level simulation, general purpose graphics processing unit (GP-GPU), high-performance simulation

Debapriya Chatterjee; Andrew DeOrio; Valeria Bertacco

2009-07-01T23:59:59.000Z

304

Bias temperature instability from gate charge characteristics investigations in N-Channel Power MOSFET  

Science Conference Proceedings (OSTI)

This paper reports the effects of bias temperature stress (positive and negative bias temperature instabilites, PBTI-NBTI) on threshold voltage, input capacitance and Miller capacitance of N-Channel Power MOSFET. The device is stressed with gate voltage ... Keywords: Gate charge, NBTI, PBTI, Power MOSFET, Thermal cycling, Thermal stress

M. Alwan; B. Beydoun; K. Ketata; M. Zoaeter

2007-06-01T23:59:59.000Z

305

Multi-Input Floating Gate Differential Amplifier and Application to Intelligent Sensors  

Science Conference Proceedings (OSTI)

Multi-input floating gate differential amplifier (FGDA) is proposed which can perform any convolution operation with differential structure and feedback loop. All operations are in the voltage mode. Only one terminal is required for the negative feedback ... Keywords: DCT, floating gate, image compression, image sensor, signal processing

Takeyasu Sakai; Hiromasa Nagai; Takashi Matsumoto

2000-12-01T23:59:59.000Z

306

Cumulonimbus Vertical Velocity Events in GATE. Part I: Diameter, Intensity and Mass Flux  

Science Conference Proceedings (OSTI)

This is the first part of a two-part paper defining the nature of the vertical air motion in and around GATE cumulonimbus clouds. The statistics are from a total of 104 km of flight legs, flown on six days in GATE, at altitudes from near the ...

Margaret A. LeMone; Edward J. Zipser

1980-11-01T23:59:59.000Z

307

Integration of Gd silicate/TiN gate stacks into SOI n-MOSFETs  

Science Conference Proceedings (OSTI)

In this work we describe the gate first integration of gadolinium silicate (GdSiO) high-k dielectrics and metal gate electrodes into SOI n-MOSFETs. Fully functional devices are achieved and compared to reference devices with standard SiO"2. Analysis ... Keywords: Gadolinium silicate, High temperature stable high-k dielectric, SOI n-MOSFET with high-k

M. Schmidt; A. Stefani; H. D. B. Gottlob; H. Kurz

2009-07-01T23:59:59.000Z

308

Energy-Delay Tradeoffs in Combinational Logic using Gate Sizing and Supply Voltage Optimization  

E-Print Network (OSTI)

Energy-Delay Tradeoffs in Combinational Logic using Gate Sizing and Supply Voltage Optimization savings to the energy profile of a circuit. These savings are obtained by using gate sizing and supply of energy to delay is derived from a linear delay model extended to multiple supplies. The optimizations

Nikolic, Borivoje

309

A satisfiability algorithm for constant depth boolean circuits with unbounded fan-in gates  

E-Print Network (OSTI)

Boolean Circuits with Unbounded Fan-In Gates A dissertationAC 0 by allowing unbounded fan-in M OD m 1 , . . . , M OD mSince each gate in ? has fan-in at most k and ? has depth D

Matthews, William Grant

2011-01-01T23:59:59.000Z

310

Fiber-Optic Stethoscope: A Cardiac Monitoring and Gating System for Magnetic Resonance Microscopy  

E-Print Network (OSTI)

Fiber-Optic Stethoscope: A Cardiac Monitoring and Gating System for Magnetic Resonance Microscopy monitoring and gating purposes. The fiber-optic stethoscope system offers a novel approach to measuring) small enough for use on rats and mice. METHODS Fiber-Optic Stethoscope System Design As shown in the MR

311

3D modelling of an important symbol of the orthodox wooden churches: the imperial gates  

Science Conference Proceedings (OSTI)

The paper presents an on-going process to digitally reconstruct the Imperial Gates of the old Romanian orthodox churches scattered on a large geographical area in Transylvania. Due to the locations of the churches and to the indestructible character ... Keywords: 3d scanning, cultural heritage, imperial gates, orthodox wooden churches

Radu Moraru; Oana Gui; Ioan Chirila

2011-07-01T23:59:59.000Z

312

PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health  

NLE Websites -- All DOE Office Websites (Extended Search)

MedGate Occupational MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) More Documents & Publications PIA - Savannah River Nuclear Solution (SRNS) Procurement Cycle System (PCS) PIA - Savannah River Nuclear Solutions (SRNS) Human Resource Management

313

Mechanism of activation gating in the full-length KcsA K[superscript +] channel  

Science Conference Proceedings (OSTI)

Using a constitutively active channel mutant, we solved the structure of full-length KcsA in the open conformation at 3.9 {angstrom}. The structure reveals that the activation gate expands about 20 {angstrom}, exerting a strain on the bulge helices in the C-terminal domain and generating side windows large enough to accommodate hydrated K{sup +} ions. Functional and spectroscopic analysis of the gating transition provides direct insight into the allosteric coupling between the activation gate and the selectivity filter. We show that the movement of the inner gate helix is transmitted to the C-terminus as a straightforward expansion, leading to an upward movement and the insertion of the top third of the bulge helix into the membrane. We suggest that by limiting the extent to which the inner gate can open, the cytoplasmic domain also modulates the level of inactivation occurring at the selectivity filter.

Uysal, Serdar; Cuello, Luis G.; Cortes, D. Marien; Koide, Shohei; Kossiakoff, Anthony A.; Perozo, Eduardo (UC)

2012-10-25T23:59:59.000Z

314

A Graphene Quantum Dot with a Single Electron Transistor as Integrated Charge Sensor  

E-Print Network (OSTI)

We have developed an etching process to fabricate a quantum dot and a nearby single electron transistor as a charge detector in a single layer graphene. The high charge sensitivity of the detector is used to probe Coulomb diamonds as well as excited spectrum in the dot, even in the regime where the current through the quantum dot is too small to be measured by conventional transport means. The graphene based quantum dot and integrated charge sensor serve as an essential building block to form a solid-state qubit in a nuclear-spin-free quantum world.

Ling-Jun Wang; Gang Cao; Tao Tu; Hai-Ou Li; Cheng Zhou; Xiao-Jie Hao; Zhan Su; Guang-Can Guo; Guo-Ping Guo; Hong-Wen Jiang

2010-08-28T23:59:59.000Z

315

Low Power, Red, Green and Blue Carbon Nanotube Enabled Vertical Organic Light Emitting Transistors for Active Matrix OLED Displays  

SciTech Connect

Organic semiconductors are potential alternatives to polycrystalline silicon as the semiconductor used in the backplane of active matrix organic light emitting diode displays. Demonstrated here is a light-emitting transistor with an organic channel, operating with low power dissipation at low voltage, and high aperture ratio, in three colors: red, green and blue. The single-wall carbon nanotube network source electrode is responsible for the high level of performance demonstrated. A major benefit enabled by this architecture is the integration of the drive transistor, storage capacitor and light emitter into a single device. Performance comparable to commercialized polycrystalline-silicon TFT driven OLEDs is demonstrated.

McCarthy, M. A. [University of Florida, Gainesville; Liu, B. [University of Florida, Gainesville; Donoghue, E. P. [University of Florida, Gainesville; Kravchenko, Ivan I [ORNL; Kim, D. Y. [University of Florida, Gainesville; So, Franky [University of Florida, Gainesville; Rinzler, A. G. [University of Florida, Gainesville

2011-01-01T23:59:59.000Z

316

At the Boundary between Superconducting and Magnetic Oxides  

NLE Websites -- All DOE Office Websites (Extended Search)

At the Boundary between Superconducting and Magnetic Oxides The transistor, which shaped so much of our modern technology and economics, grew out of scientists' desire to gain a greater understanding of the interfaces between different materials. In the same way, today's materials scientists seek to expand our understanding of complex oxides by creating new states at the interface of two materials. Novel growth of complex oxides provides the ability to combine different materials with different and often antagonistic order parameters to create novel, strongly correlated states at the interface. As shown in the article, " Magnetism at the interface between ferromagnetic and superconducting oxides " in the April 2006 issue of Nature Physics, element-resolved x-ray probes and neutrons can be used to construct the first microscopic picture of interactions in a La[subscript 0.7]Ca[subscript 0.3]MnO[subscript 3]/YBa[subscript 2]Cu[subscript 3]O[subscript 7-x] superlattice.

317

Formation of zinc oxide films using submicron zinc particle dispersions  

SciTech Connect

The thermal oxidation of submicron metallic Zn particles was studied as a method to form nanostructured ZnO films. The particles used for this work were characterized by electron microscopy, x-ray diffraction and thermal analysis to evaluate the Zn-ZnO core shell structure, surface morphology, and oxidation characteristics. Significant nanostructural changes were observed for films annealed to 400 C or higher, where nanoflakes, nanoribbons, nanoneedles and nanorods were formed as a result of stress induced fractures arising in the ZnO outer shell due to differential thermal expansion between the metallic Zn core and the ZnO shell. Mass transport occurs through these defects due to the high vapor pressure for metallic Zn at temperatures above 230 C, whereupon the Zn vapor rapidly oxidizes in air to form the ZnO nanostructures. The Zn particles were also incorporated into zinc indium oxide precursor solutions to form thin film transistor test structures to evaluate the potential of forming nanostructured field effect sensors using simple solution processing.

Rajachidambaram, Meena Suhanya; Varga, Tamas; Kovarik, Libor; Sanghavi, Rahul P.; Shutthanandan, V.; Thevuthasan, Suntharampillai; Han, Seungyeol; Chang, Chih-hung; Herman, Gregory S.

2012-07-27T23:59:59.000Z

318

Gas-controlled dynamic vacuum insulation with gas gate  

DOE Patents (OSTI)

Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber. 25 figs.

Benson, D.K.; Potter, T.F.

1994-06-07T23:59:59.000Z

319

Gas-controlled dynamic vacuum insulation with gas gate  

DOE Patents (OSTI)

Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber.

Benson, David K. (Golden, CO); Potter, Thomas F. (Denver, CO)

1994-06-07T23:59:59.000Z

320

Thermally Processed High-Mobility MOS Thin-Film Transistors on Transferable Single-Crystal Elastically Strain-Sharing Si/SiGe/Si Nanomembranes  

DOE Green Energy (OSTI)

Demonstration of high-performance MOS thin-film transistors (TFTs) on elastically strain-sharing single-crystal Si/SiGe/Si nanomembranes (SiNMs) that are transferred to foreign substrates is reported. The transferable SiNMs are realized by first growing pseudomorphic SiGe and Si layers on silicon-on-insulator (SOI) substrates, and then, selectively removing the buried oxide (BOX) layer from the SOI. Before the release, only the SiGe layer is compressively strained. Upon release, part of the compressive strain in the SiGe layer is transferred to the thin Si layers, and the Si layers, thus, become tensile strained. Both the initial compressive strain state in the SiGe layer and the final strain sharing state between the SiGe and the Si layers are verified with X-ray diffraction measurements. The TFTs are fabricated employing the conventional high-temperature MOS process on the strain-shared SiNMs that are transferred to an oxidized Si substrate. The transferred strained-sharing SiNMs show outstanding thermal stability and can withstand the high-temperature TFT process on the new host substrate. The strained-channel TFTs fabricated on the new host substrate show high current drive capability and an average electron effective mobility of 270 cm{sup 2}/V ldr s. The results suggest that transferable and thermally stable single-crystal elastically strain- sharing SiNMs can serve as excellent active material for high-speed device application with a simple and scalable transfer method. The demonstration of MOS TFTs on the transferable nanomembranes may create the opportunity for future high-speed Si CMOS heterogeneous integration on any substrate.

Yuan, H.-C.; Kelly, M. M.; Savage, D. E.; Lagally, M. G.; Celler, G. K.; Zhenqiang, M.

2008-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Compound semiconductor field-effect transistors with improved dc and high frequency performance  

DOE Patents (OSTI)

A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is deposited. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region the Si-channel tail, but does not contribute substantially to the acceptor concentration in the region of the buried p-implant. As a result, the invention provides for improved field effect transistor devices with enhancement of both DC and high-frequency performance.

Zolper, J.C.; Sherwin, M.E.; Baca, A.G.

1995-12-31T23:59:59.000Z

322

Development and Research of HVDC Light System Based on DSP  

Science Conference Proceedings (OSTI)

After entering the 1990s, a new metal oxide semiconductor device-- insulated gate bipolar transistor (IGBT) was first widely used in the industrial driving device. The voltage source converter using IGBT has the ability to turn off current and it can ... Keywords: HVDC light system, IGBT, pulse width modulation

Yanping Gao; Xianqiang Lv; Xianjiu Guo

2009-01-01T23:59:59.000Z

323

Lipid Oxidation Pathways  

Science Conference Proceedings (OSTI)

This book reviews state-of-the-art developments in the understanding of the oxidation of lipids and its connection with the oxidation of other biological molecules such as proteins and starch. Lipid Oxidation Pathways Hardback Books Health - Nutrition -

324

Hole mobility enhancement in In0.41 Ga0.59 Sb quantum-well field-effect transistors  

E-Print Network (OSTI)

The impact of ?110? uniaxial strain on the characteristics of p-channel In[subscript 0.41]Ga[subscript 0.59]Sb quantum-well field-effect transistors (QW-FETs) is studied through chip-bending experiments. Uniaxial strain ...

Xia, Ling

325

Selective methane oxidation over promoted oxide catalysts  

DOE Green Energy (OSTI)

Objective was to selectively oxidize methane to C{sub 2} hydrocarbons and to oxygenates, in particular formaldehyde and methanol, in high space time yields under relatively mild reaction conditions. Results in this document are reported under the headings: methane oxidation over silica, methane oxidation over Sr/La{sub 2}O{sub 3} catalysts, and oxidative coupling of methane over sulfate-doped Sr/La{sub 2}O{sub 3} catalysts. 24 refs, 10 figs, 4 tabs.

Klier, K.; Herman, R.G.

1993-12-31T23:59:59.000Z

326

The Gated X-ray Detector for the National Ignition Facility  

Science Conference Proceedings (OSTI)

Two new gated x-ray imaging cameras have recently been designed, constructed and delivered to the National Ignition Facility in Livermore, CA. These Gated X-ray Detectors are each designed to fit within an aluminum airbox with a large capacity cooling plane and are fitted with an array of environmental housekeeping sensors. These instruments are significant different from earlier generations of gated x-ray images due in parts to an innovative impendence matching scheme, advanced phosphor screens, pulsed phosphor circuits, precision assembly fixturing, unique system monitoring and complete remote computer control. Preliminary characterization has shown repeatable uniformity between imaging strips, improved spatial resolution and no detectable impendence reflections.

Oertel, J A; Barnes, C; Archuleta, T; Casper, L; Fatherley, V; Heinrichs, T; King, R; Landers, D; Lopez, F; Sanchez, P; Sandoval, G; Schrank, L; Walsh, P; Bell, P; Brown, M; Costa, R; Holder, J; Montalongo, S; Pederson, N

2006-05-18T23:59:59.000Z

327

Imperfect linear-optical photonic gates with number-resolving photodetection  

Science Conference Proceedings (OSTI)

We use the numerical optimization techniques of Uskov et al.[Phys. Rev. A 81, 012303 (2010)] to investigate the behavior of the success rates for Knill-Laflamme-Milburn-style [Knill et al., Nature (London) 409, 46 (2001)] two- and three-qubit entangling gates. The methods are first demonstrated at perfect fidelity and then extended to imperfect gates. We find that as the perfect fidelity condition is relaxed, the maximum attainable success rates increase in a predictable fashion depending on the size of the system, and we compare that rate of increase for several gates.

Smith, A. Matthew [Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118 (United States); Air Force Research Laboratory, Information Directorate, Rome, New York 13440 (United States); Uskov, D. B. [Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118 (United States); Department of Mathematics and Natural Sciences, Brescia University, Owensboro, Kentucky 42301 (United States); Ying, L. H.; Kaplan, L. [Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118 (United States)

2011-09-15T23:59:59.000Z

328

Molecular beam deposition of LaAlO3 on silicon for sub-22nm CMOS technological nodes: Towards a perfect control of the oxide/silicon heterointerface  

Science Conference Proceedings (OSTI)

This work reports on the development of thin amorphous LaAlO"3 (LAO) layers on Si(001) for their integration as gate oxide in sub-22nm CMOS technologies. The crucial influence of the Si surface preparation is highlighted and an optimized surface preparation ... Keywords: Amorphous high-? dielectrics, Interfacial layer, LaAlO3, Molecular beam epitaxy, Surface preparation

S. Pelloquin; L. Becerra; G. Saint-Girons; C. Plossu; N. Baboux; D. Albertini; G. Grenet; G. Hollinger

2009-07-01T23:59:59.000Z

329

VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy March 5, 2012 - 1:24pm Addthis Secretary Chu sits down with Microsoft Founder and Chairman Bill Gates at the 2012 ARPA-E Energy Innovation Summit. April Saylor April Saylor Former Digital Outreach Strategist, Office of Public Affairs Last week, attendees at the 2012 ARPA-E Energy Innovation Summit heard from a variety of leaders from across the research, business and government sectors who spoke at the conference of nearly 2,400. These speakers, along with the startup companies and innovators in attendance, converged outside of Washington, D.C., to offer their take on how America can tackle our energy challenges. One of the top-level highlights from the Summit included this fireside chat

330

CNT-based gas ionizers with integrated MEMS gate for portable mass spectrometry applications  

E-Print Network (OSTI)

We report the fabrication and experimental characterization of a novel low-cost carbon nanotube (CNT)-based electron impact ionizer (EII) with integrated gate for portable mass spectrometry applications. The device achieves ...

Velasquez-Garcia, Luis Fernando

331

Diagnosis of Convective and Mesoscale Motions During Phase IH of Gate  

Science Conference Proceedings (OSTI)

Observational evidence from GATE suggests that a significant fraction of precipitation in tropical disturbances over the eastern Atlantic occurs beneath anvil-type mesoscale convective systems that are frequently associated with intense ...

Richard H. Johnson

1980-04-01T23:59:59.000Z

332

A Compact Propagation Delay Model for Deep-Submicron CMOS Gates including Crosstalk  

Science Conference Proceedings (OSTI)

We present a compact, fully physical, analytical model for the propagation delay and the output transition time of deep-submicron CMOS gates. The model accounts for crosstalk effects, short-circuit currents, the input-output coupling capacitance and ...

J. L. Rossell; J. Segura

2004-02-01T23:59:59.000Z

333

Lessons learned in the design and erection of box girder bridges from the West Gate collapse  

E-Print Network (OSTI)

The West Gate Bridge, intended to span the Yarra River in Australia, collapsed during its third year of construction in 1970. Investigation into the project revealed numerous issues in the bridge's design and construction. ...

Burton, Alia Christine

2007-01-01T23:59:59.000Z

334

The Moist Available Energy of a Conditionally Unstable Atmosphere. Part II: Further Analysis of GATE Data  

Science Conference Proceedings (OSTI)

The generalized convective available potential energy (GCAPE) observed during GATE has been analyzed using the Lagrangian algorithm of Lorenz, as modified by Randall and Wang. The effects of ice are included and are discussed in an Appendix. A ...

Junyi Wang; David A. Randall

1994-03-01T23:59:59.000Z

335

Low-power flip-flop using internal clock gating and adaptive body bias.  

E-Print Network (OSTI)

??This dissertation presents a new systematic approach to flip-flop design using Internal Clock Gating, (ICG), and Adaptive Body-Bias, (ABB), in order to reduce power consumption. (more)

Galvis, Jorge Alberto

2006-01-01T23:59:59.000Z

336

An Analysis of Convective System on a 100-km Scale during GATE  

Science Conference Proceedings (OSTI)

Usig data on a 100 km-scale from Phase III of GATE, the kinematic and thermodynamic, properties of the mesoscale environment in which convective clouds of varying intensities exist are investigated. Classifications into disturbed and suppressed ...

R. P. Pearce; J. Bayo Omotosho

1986-08-01T23:59:59.000Z

337

Electrical gating effects on the magnetic properties of (Ga,Mn)As diluted magnetic semiconductors  

E-Print Network (OSTI)

and Future Work . . . . . . . . . . . . . . . . . . . . . . . . 120 7.2.1 Voltage-pulse magnetization switching . . . . . . . . . . . . . 120 7.2.2 Electrolyte-gating . . . . . . . . . . . . . . . . . . . . . . . . . 121 A Fabrication steps 122 A.1 Processes...

Owen, Man Hon Samuel

2010-11-16T23:59:59.000Z

338

Determination of Mean Cumulus Cloud vorticity from GATE A/B-Scale Potential Vorticity Budget  

Science Conference Proceedings (OSTI)

The effects of cumulus clouds on the large-scale potential vorticity field are investigated using GATE data. Clouds are found to modify the mean potential vorticity field not only through vertical mixing but also through the generation of ...

Lawrence Cheng; Tsoi-Ching Yip; Han-Ru Cho

1980-04-01T23:59:59.000Z

339

Further Analysis of the Composite Wind and Thermodynamic Structure of the 12 September GATE Squall Line  

Science Conference Proceedings (OSTI)

An objective analysis technique is applied to the time-composite wind and thermodynamic fields of the 12 September GATE tropical squall line. Previous subjective analyses described by Gamache and Houze are confirmed and several new results are ...

John F. Gamache; Robert A. Houze Jr.

1985-08-01T23:59:59.000Z

340

Lifetime of high-k gate dielectrics and analogy with strength of quasibrittle structures  

E-Print Network (OSTI)

The two-parameter Weibull distribution has been widely adopted to model the lifetime statistics of dielectric breakdown under constant voltage, but recent lifetime testing for high-k gate dielectrics has revealed a systematic ...

Le, Jia-Liang

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

All-optical logic gates based on vertical cavity semiconductor optical amplifiers  

E-Print Network (OSTI)

AND FIGURES Tables: Table 2.2.1: Truth Table for NOR-Gate SR13 Table 2.5.1: Truth Table for VCSOA SR Flip-Truth Table ..

Gauss, Veronica Andrea

2009-01-01T23:59:59.000Z

342

Explicit Simulation of Cumulus Ensembles with the GATE Phase III Data: Comparison with Observations  

Science Conference Proceedings (OSTI)

The macroscopic behavior of cumulus convection and its mesoscale organization during Phase III of the Global Atmospheric Research Program's (GARP) Atlantic Tropical Experiment (GATE) is simulated with a two-dimensional (2D) cloud ensemble model. ...

Kuan-Man Xu; David A. Randall

1996-12-01T23:59:59.000Z

343

Single electron effects and structural effects in ultrascaled silicon nanocrystal floating-gate memories  

Science Conference Proceedings (OSTI)

In this paper, we present a nanometer-sized floating-gate memory device, fabricated on silicon-on-insulator substrate and using silicon nanocrystals as storage nodes. Single electron charging and discharging phenomena occurring at room temperature will ...

G. Molas; B. De Salvo; G. Ghibaudo; D. Mariolle; A. Toffoli; N. Buffet; R. Puglisi; S. Lombardo; S. Deleonibus

2004-03-01T23:59:59.000Z

344

Multimodal Properties of the Surface-Wave Field Observed with Pitch-Roll Buoys During GATE  

Science Conference Proceedings (OSTI)

A sophisticated analysis technique is applied to a subset of pitch-roll buoy data collected by the research vessels Gilliss and Quadra during the GARP Tropical Atlantic Experiment (GATE) in September 1974. The procedure enables the examination of ...

Linda Marie Lawson; Robert Bryan Long

1983-03-01T23:59:59.000Z

345

A Systematic Search for Trapped Equatorial Waves in the GATE Velocity Data  

Science Conference Proceedings (OSTI)

Moored current meter data taken over a 60-day period during GATE (GARP Atlantic Tropical Experiment) near the equator at 28W, have been systematically searched for vertically propagating equatorially trapped waves. Three independent tests ...

A. M. Horigan; R. H. Weisberg

1981-04-01T23:59:59.000Z

346

The robustness of magic state distillation against errors in Clifford gates  

E-Print Network (OSTI)

Quantum error correction and fault-tolerance have provided the possibility for large scale quantum computations without a detrimental loss of quantum information. A very natural class of gates for fault-tolerant quantum computation is the Clifford gate set and as such their usefulness for universal quantum computation is of great interest. Clifford group gates augmented by magic state preparation give the possibility of simulating universal quantum computation. However, experimentally one cannot expect to perfectly prepare magic states. Nonetheless, it has been shown that by repeatedly applying operations from the Clifford group and measurements in the Pauli basis, the fidelity of noisy prepared magic states can be increased arbitrarily close to a pure magic state [1]. We investigate the robustness of magic state distillation to perturbations of the initial states to arbitrary locations in the Bloch sphere due to noise. Additionally, we consider a depolarizing noise model on the quantum gates in the decoding ...

Jochym-O'Connor, Tomas; Helou, Bassam; Laflamme, Raymond

2012-01-01T23:59:59.000Z

347

Mesoscale Motion Fields Associated with a Slowly Moving GATE Convective Band  

Science Conference Proceedings (OSTI)

The structure of the convective band of 14 September in the dense GATE observing array is determined using wind and thermodynamic data primarily from multiple aircraft penetrations, which are well distributed in the vertical and in time.

Edward J. Zipser; Rebecca J. Meitn; Margaret A. LeMone

1981-08-01T23:59:59.000Z

348

Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs  

Science Conference Proceedings (OSTI)

In this paper, carrier transport mechanism of MOSFETs with HfLaSiON was analyzed. It was shown that gate current is consisted of Schottky emission, Frenkel-Poole (F-P) emission and Fowler-Nordheim (F-N) tunneling components. Schottky barrier height is ... Keywords: Fowler-Nordheim (F-N) tunneling, Frenkel-Poole (F-P) emission, Gate current, HfLaSiON, High-k, Schottky emission, Trap energy level, Trap-assisted tunneling (TAT)

Hyuk-Min Kwon; Won-Ho Choi; In-Shik Han; Min-Ki Na; Sang-Uk Park; Jung-Deuk Bok; Chang-Yong Kang; Byoung-Hun Lee; Raj Jammy; Hi-Deok Lee

2011-12-01T23:59:59.000Z

349

Association of State Dam Safety Officials (ASDSO)/EPRI Spillway Gate Workshop: January 5 & 6, 2000  

Science Conference Proceedings (OSTI)

Maintaining the integrity of dams at hydroelectric projects is essential to the protection of communities, the surrounding environment, and the power and resource management infrastructure. The Spillway Gate Workshop, sponsored by the Association of State Dam Safety Officials (ASDSO) and EPRI, and with funding from the Federal Emergency Management Agency (FEMA), focused on a critical aspect of the safety issues related to analysis, inspection, maintenance, and performance of spillway gates. The intent of...

2000-06-16T23:59:59.000Z

350

Growth and Fabrication of GaN/AlGaN Heterojunction Bipolar Transistor  

SciTech Connect

A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si Doping in the emitter and collector regions was grown by Metal Organic Chemical Vapor Deposition in c-axis Al(2)O(3). Secondary Ion Mass Spectrometry measurements showed no increase in the O concentration (2-3x10(18) cm(-3)) in the AlGaN emitter and fairly low levels of C (~4-5x10(17) cm (-3)) throughout the structure. Due to the non-ohmic behavior of the base contact at room temperature, the current gain of large area (~90 um diameter) devices was <3. Increasing the device operating temperature led to higher ionization fractions of the mg acceptors in the base, and current gains of ~10 were obtained at 300 degree C.

Abernathy, C.R.; Baca, A.G.; Cao, X.A.; Cho, H.; Dang, G.T.; Donovan, S.M.; Han, J.; Jung, K.B.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Wilson, R.G.; Zhang, A.P.; Zhang, L

1999-03-16T23:59:59.000Z

351

Detection of nanosecond-scale, high power THz pulses with a field effect transistor  

Science Conference Proceedings (OSTI)

We demonstrate detection and resolution of high power, 34 ns free electron laser pulses using a rectifying field effect transistor. The detector remains linear up to an input power of 11 {+-} 0.5 W at a pulse energy of 20 {+-} 1 {mu}J at 240 GHz. We compare its performance to a protected Schottky diode, finding a shorter intrinsic time constant. The damage threshold is estimated to be a few 100 W. The detector is, therefore, well-suited for characterizing high power THz pulses. We further demonstrate that the same detector can be used to detect low power continuous-wave THz signals with a post detection limited noise floor of 3.1 {mu}W/{radical}(Hz). Such ultrafast, high power detectors are important tools for high power and high energy THz facilities such as free electron lasers.

Preu, S. [Physics Department and Institute for Terahertz Science and Technology, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106 (United States); Chair for Applied Physics, University of Erlangen-Nuremberg, 91058 Erlangen (Germany); Lu, H.; Gossard, A. C. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Sherwin, M. S. [Physics Department and Institute for Terahertz Science and Technology, University of California, Santa Barbara, California 93106 (United States)

2012-05-15T23:59:59.000Z

352

Radiation-induced surface degradation of GaAs and high electron mobility transistor structures  

Science Conference Proceedings (OSTI)

Transistor heterostructures with high-carrier-mobility have been studied. It is shown that, as the {gamma}-irradiation dose {Phi} increases, their degradation occurs in the following sequence. (i) At {Phi} 0.2-eV decrease in the diffusion energy of intrinsic defects and, probably, atmospheric oxygen. (ii) At {Phi} > 10{sup 7} rad, highly structurally disordered regions larger than 1 {mu}m are formed near microscopic defects or dislocations. (iii) At {Phi} > 10{sup 8} rad, there occurs degradation of the internal AlGaAs/InGaAs/GaAs interfaces and the working channel. An effective method for studying the degradation processes in heterostructures is to employ a set of structural diagnostic methods to analyze processes of radiation-induced and aging degradation, in combination with theoretical simulation of the occurring processes.

Bobyl, A. V.; Konnikov, S. G.; Ustinov, V. M.; Baidakova, M. V.; Maleev, N. A.; Sakseev, D. A. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Konakova, R. V., E-mail: konakova@isp.kiev.ua; Milenin, V. V.; Prokopenko, I. V. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)

2012-06-15T23:59:59.000Z

353

High-power microwave LDMOS transistors for wireless data transmission technologies (Review)  

Science Conference Proceedings (OSTI)

The fields of the application, structure, fabrication, and packaging technology of high-power microwave LDMOS transistors and the main advantages of these devices were analyzed. Basic physical parameters and some technology factors were matched for optimum device operation. Solid-state microwave electronics has been actively developed for the last 10-15 years. Simultaneously with improvement of old devices, new devices and structures are actively being adopted and developed and new semiconductor materials are being commercialized. Microwave LDMOS technology is in demand in such fields as avionics, civil and military radars, repeaters, base stations of cellular communication systems, television and broadcasting transmitters, and transceivers for high-speed wireless computer networks (promising Wi-Fi and Wi-Max standards).

Kuznetsov, E. V., E-mail: E.Kouzntsov@tcen.ru; Shemyakin, A. V. [Moscow Institute of Electronic Technology, SMC Technological Center (Russian Federation)

2010-12-15T23:59:59.000Z

354

GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications  

SciTech Connect

This report summarizes the accomplishments of the UAB GATE Center of Excellence in Lightweight Materials for Automotive Applications. The first Phase of the UAB DOE GATE center spanned the period 2005-2011. The UAB GATE goals coordinated with the overall goals of DOE's FreedomCAR and Vehicles Technologies initiative and DOE GATE program. The FCVT goals are: (1) Development and validation of advanced materials and manufacturing technologies to significantly reduce automotive vehicle body and chassis weight without compromising other attributes such as safety, performance, recyclability, and cost; (2) To provide a new generation of engineers and scientists with knowledge and skills in advanced automotive technologies. The UAB GATE focused on both the FCVT and GATE goals in the following manner: (1) Train and produce graduates in lightweight automotive materials technologies; (2) Structure the engineering curricula to produce specialists in the automotive area; (3) Leverage automotive related industry in the State of Alabama; (4) Expose minority students to advanced technologies early in their career; (5) Develop innovative virtual classroom capabilities tied to real manufacturing operations; and (6) Integrate synergistic, multi-departmental activities to produce new product and manufacturing technologies for more damage tolerant, cost-effective, and lighter automotive structures.

None

2011-07-31T23:59:59.000Z

355

Ca 2? permeation in cyclic nucleotide-gated channels  

E-Print Network (OSTI)

Cyclic nucleotide-gated (CNG) channels conduct Na ?, K ? and Ca2 ? currents under the control of cGMP and cAMP. Activation of CNG channels leads to depolarization of the membrane voltage and to a concomitant increase of the cytosolic Ca2 ? concentration. Several polypeptides were identified that constitute principal and modulatory subunits of CNG channels in both neurons and non-excitable cells, co-assembling to form a variety of heteromeric proteins with distinct biophysical properties. Since the contribution of each channel type to Ca2 ? signaling depends on its specific Ca2 ? conductance, it is necessary to analyze Ca2 ? permeation for each individual channel type. We have analyzed Ca2 ? permeation in all principal subunits of vertebrates and for a principal subunit from Drosophila melanogaster. We measured the fractional Ca2 ? current over the physiological range of Ca2 ? concentrations and found that Ca2 ? permeation is determined by subunit composition and modulated by membrane voltage and extracellular pH. Ca2 ? permeation is controlled by the Ca2?-binding affinity of the intrapore cation-binding site, which varies profoundly between members of the CNG channel family, and gives rise to a surprising diversity in the ability to generate Ca2 ? signals.

Claudia Dzeja; Volker Hagen; Stephan Frings

1999-01-01T23:59:59.000Z

356

Range-gated imaging for near-field target identification  

Science Conference Proceedings (OSTI)

The combination of two complementary technologies developed independently at Los Alamos National Laboratory (LANL) and Sandia National Laboratory (SNL) has demonstrated feasibility of target detection and image capture in a highly light-scattering, medium. The technique uses a compact SNL developed Photoconductive Semiconductor Switch/Laser Diode Array (PCSS/LDA) for short-range (distances of 8 to 10 m) large Field-Of-View (FOV) target illumination. Generation of a time-correlated echo signal is accomplished using a photodiode. The return image signal is recorded with a high-speed shuttered Micro-Channel-Plate Image Intensifier (MCPII), declined by LANL and manufactured by Philips Photonics. The MCPII is rated using a high-frequency impedance-matching microstrip design to produce 150 to 200 ps duration optical exposures. The ultra first shuttering producer depth resolution of a few inches along the optic axis between the MCPII and the target, producing enhanced target images effectively deconvolved from noise components from the scattering medium in the FOV. The images from the MCPII are recorded with an RS-170 Charge-Coupled-Device camera and a Big Sky, Beam Code, PC-based digitizer frame grabber and analysis package. Laser pulse data were obtained by the but jitter problems and spectral mismatches between diode spectral emission wavelength and MCPII photocathode spectral sensitivity prevented the capture of fast gating imaging with this demonstration system. Continued development of the system is underway.

Yates, G.J.; Gallegos, R.A.; McDonald, T.E. [and others

1996-12-01T23:59:59.000Z

357

Photo-oxidation catalysts  

DOE Patents (OSTI)

Photo-oxidation catalysts and methods for cleaning a metal-based catalyst are disclosed. An exemplary catalyst system implementing a photo-oxidation catalyst may comprise a metal-based catalyst, and a photo-oxidation catalyst for cleaning the metal-based catalyst in the presence of light. The exposure to light enables the photo-oxidation catalyst to substantially oxidize absorbed contaminants and reduce accumulation of the contaminants on the metal-based catalyst. Applications are also disclosed.

Pitts, J. Roland (Lakewood, CO); Liu, Ping (Irvine, CA); Smith, R. Davis (Golden, CO)

2009-07-14T23:59:59.000Z

358

Hybrid Electric Power Train and Control Strategies Automotive Technology Education (GATE) Program  

Science Conference Proceedings (OSTI)

Plug-in hybrid electric vehicles (PHEV) offer societal benefits through their ability to displace the use of petroleum fuels. Petroleum fuels represent a polluting and politically destabilizing energy carrier. PHEV technologies can move transportation away from petroleum fuel sources by enabling domestically generated electricity and liquids bio-fuels to serve as a carrier for transportation energy. Additionally, the All-Electric-Range (AER) offered by PHEVs can significantly reduce demand for expensive and polluting liquid fuels. The GATE funding received during the 1998 through 2004 funding cycle by the UC Davis Hybrid Electric Vehicle Center (HEVC) was used to advance and train researchers in PHEV technologies. GATE funding was used to construct a rigorous PHEV curriculum, provide financial support for HEVC researchers, and provide material support for research efforts. A rigorous curriculum was developed through the UC Davis Mechanical and Aeronautical Engineering Department to train HEVC researchers. Students' research benefited from this course work by advancing the graduate student researchers' understanding of key PHEV design considerations. GATE support assisted HEVC researchers in authoring technical articles and producing patents. By supporting HEVC researchers multiple Master's theses were written as well as journal articles and publications. The topics from these publications include Continuously Variable Transmission control strategies and PHEV cross platform controls software development. The GATE funding has been well used to advance PHEV systems. The UC Davis Hybrid Electric Vehicle Center is greatly appreciative for the opportunities GATE funding provided. The goals and objectives for the HEVC GATE funding were to nourish engineering research in PHEV technologies. The funding supplied equipment needed to allow researchers to investigate PHEV design sensitivities and to further optimize system components. Over a dozen PHEV researchers benefited from the GATE funding and produced journal articles and intellectual property as a result. The remainder of this document outlines the productivity resulting from GATE funds. The topics include the following: GATE Hybrid Vehicle Systems Related Courses; Students Supported; Publications; and Patents. A discussion regarding the HEVC accomplishments with respect to the GATE funding goals is provided in the conclusion.

Andrew Frank

2006-05-31T23:59:59.000Z

359

Multifunctional Oxides: Multifunctional Oxides: Synthesis and ...  

Science Conference Proceedings (OSTI)

Using Ultrafast Optical Spectroscopy to Explore Magneoelectric Coupling in Multiferroic Oxide Heterostructures: Y-M Sheu1; S. Trugman1; L Yan1; C-P Chuu 1;...

360

Asphalt Oxidation Kinetics and Pavement Oxidation Modeling  

E-Print Network (OSTI)

Most paved roads in the United States are surfaced with asphalt. These asphalt pavements suffer from fatigue cracking and thermal cracking, aggravated by the oxidation and hardening of asphalt. This negative impact of asphalt oxidation on pavement performance has not been considered adequately in pavement design. Part of the reason is that the process of asphalt oxidation in pavement is not well understood. This work focused on understanding the asphalt oxidation kinetics and on developing pavement oxidation model that predicts asphalt oxidation and hardening in pavement under environmental conditions. A number of asphalts were studied in laboratory condition. Based on kinetics data, a fast-rate ? constant-rate asphalt oxidation kinetics model was developed to describe the early nonlinear fast-rate aging period and the later constant-rate period of asphalt oxidation. Furthermore, reaction kinetics parameters for the fast-rate and constant-rate reactions were empirically correlated, leading to a simplified model. And the experimental effort and time to obtain these kinetics parameters were significantly reduced. Furthermore, to investigate the mechanism of asphalt oxidation, two antioxidants were studied on their effectiveness. Asphalt oxidation was not significantly affected. It was found that evaluation of antioxidant effectiveness based on viscosity only is not reliable. The asphalt oxidation kinetics model was incorporated into the pavement oxidation model that predicts asphalt oxidation in pavement. The pavement oxidation model mimics the oxidation process of asphalt in real mixture at pavement temperatures. A new parameter, diffusion depth, defined the oxygen diffusion region in the mastic. A field calibration factor accounted for the factors not considered in the model such as the effect of small aggregate particles on oxygen diffusion. Carbonyl area and viscosity of binders recovered from field cores of three pavements in Texas were measured and were used for model calibration and validation. Results demonstrated that the proposed model estimates carbonyl growth over time in pavement, layer-by-layer, quite well. Finally, this work can be useful for incorporating asphalt oxidation into a pavement design method that can predict pavement performance with time and for making strategic decisions such as optimal time for maintenance treatments.

Jin, Xin

2012-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

GATE Air-Sea Interaction. I: Numerical Model Calculation of Local Sea-Surface Temperatures on Diurnal Time Scales Using the GATE Version III Gridded Global Data Set  

Science Conference Proceedings (OSTI)

The numerical model of air-sea interaction previously described in Jacobs (1978), Pandolfo and Jacobs (1972) and Pandolfo (1969) is inserted at one horizontal grid point in the GATE III Gridded Global Data Set to calculate a model-generated, ...

P. S. Brown Jr.; J. P. Pandolfo; S. J. Thoren

1982-05-01T23:59:59.000Z

362

Nanostructure Fabrication and Metrology  

Science Conference Proceedings (OSTI)

... Developed a photon-number resolving detector based on quantum dots (Quantum Dot Optically Gated Field Effect Transistor, QDOGFET); ...

2011-11-07T23:59:59.000Z

363

Single-Phase Self-Oscillating Jets for Enhanced Heat Transfer: Preprint  

DOE Green Energy (OSTI)

Self-oscillating jets have potential to cool insulated gate bipolar transistors in vehicle power electronics modules.

Narumanchi, S.; Kelly, K.; Mihalic, M.; Gopalan, S.; Hester, R.; Vlahinos, A.

2008-06-01T23:59:59.000Z

364

Scanning transmission electron microscopy of gate stacks with HfO2 dielectrics and TiN electrodes  

E-Print Network (OSTI)

Scanning transmission electron microscopy of gate stacksEELS) in scanning transmission electron microscopy were usedWe use scanning transmission electron microscopy (STEM)

Agustin, Melody P.; Fonseca, Leo R. C.; Hooker, Jacob C.; Stemmer, Susanne

2005-01-01T23:59:59.000Z

365

Eye tracking and gating system for proton therapy of orbital tumors  

Science Conference Proceedings (OSTI)

Purpose: A new motion-based gated proton therapy for the treatment of orbital tumors using real-time eye-tracking system was designed and evaluated. Methods: We developed our system by image-pattern matching, using a normalized cross-correlation technique with LabVIEW 8.6 and Vision Assistant 8.6 (National Instruments, Austin, TX). To measure the pixel spacing of an image consistently, four different calibration modes such as the point-detection, the edge-detection, the line-measurement, and the manual measurement mode were suggested and used. After these methods were applied to proton therapy, gating was performed, and radiation dose distributions were evaluated. Results: Moving phantom verification measurements resulted in errors of less than 0.1 mm for given ranges of translation. Dosimetric evaluation of the beam-gating system versus nongated treatment delivery with a moving phantom shows that while there was only 0.83 mm growth in lateral penumbra for gated radiotherapy, there was 4.95 mm growth in lateral penumbra in case of nongated exposure. The analysis from clinical results suggests that the average of eye movements depends distinctively on each patient by showing 0.44 mm, 0.45 mm, and 0.86 mm for three patients, respectively. Conclusions: The developed automatic eye-tracking based beam-gating system enabled us to perform high-precision proton radiotherapy of orbital tumors.

Shin, Dongho; Yoo, Seung Hoon; Moon, Sung Ho; Yoon, Myonggeun; Lee, Se Byeong; Park, Sung Yong [Proton Therapy Center, National Cancer Center, Goyang, Gyeonggi 410-769 (Korea, Republic of); Department of Radiation Oncology, CHA Bundang Medical Center, CHA University, Seongnam, Gyeonggi 463-712 (Korea, Republic of); Proton Therapy Center, National Cancer Center, Goyang, Gyeonggi 410-769 (Korea, Republic of); Department of Radiological Science, Korea University, Seoul 136-703 (Korea, Republic of); Proton Therapy Center, National Cancer Center, Goyang, Gyeonggi 410-769 (Korea, Republic of); Proton Therapy Center, McLaren Cancer Institute, Flint, Michigan 48532 (United States)

2012-07-15T23:59:59.000Z

366

Demonstration of an all-optical quantum controlled-NOT gate  

E-Print Network (OSTI)

The promise of tremendous computational power, coupled with the development of robust error-correcting schemes, has fuelled extensive efforts to build a quantum computer. The requirements for realizing such a device are confounding: scalable quantum bits (two-level quantum systems, or qubits) that can be well isolated from the environment, but also initialized, measured and made to undergo controllable interactions to implement a universal set of quantum logic gates. The usual set consists of single qubit rotations and a controlled-NOT (CNOT) gate, which flips the state of a target qubit conditional on the control qubit being in the state 1. Here we report an unambiguous experimental demonstration and comprehensive characterization of quantum CNOT operation in an optical system. We produce all four entangled Bell states as a function of only the input qubits' logical values, for a single operating condition of the gate. The gate is probabilistic (the qubits are destroyed upon failure), but with the addition of linear optical quantum non-demolition measurements, it is equivalent to the CNOT gate required for scalable all-optical quantum computation.

J L O'Brien; G J Pryde; A G White; T C Ralph; D Branning

2004-03-08T23:59:59.000Z

367

UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence  

SciTech Connect

This is the final report of the UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence which spanned from 2005-2012. The U.S. Department of Energy (DOE) established the Graduate Automotive Technology Education (GATE) Program, to provide a new generation of engineers and scientists with knowledge and skills to create advanced automotive technologies. The UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence established in 2005 is focused on research, education, industrial collaboration and outreach within automotive technology. UC Davis has had two independent GATE centers with separate well-defined objectives and research programs from 1998. The Fuel Cell Center, administered by ITS-Davis, has focused on fuel cell technology. The Hybrid-Electric Vehicle Design Center (HEV Center), administered by the Department of Mechanical and Aeronautical Engineering, has focused on the development of plug-in hybrid technology using internal combustion engines. The merger of these two centers in 2005 has broadened the scope of research and lead to higher visibility of the activity. UC Davis??s existing GATE centers have become the campus??s research focal points on fuel cells and hybrid-electric vehicles, and the home for graduate students who are studying advanced automotive technologies. The centers have been highly successful in attracting, training, and placing top-notch students into fuel cell and hybrid programs in both industry and government.

Erickson, Paul

2012-05-31T23:59:59.000Z

368

Water gate array for current flow or tidal movement pneumatic harnessing system  

DOE Patents (OSTI)

The invention, which provides a system for harnessing power from current flow or tidal movement in a body of water, comprises first and second hydro-pneumatic chambers each having ingress and egress below the water surface near the river or ocean floor and water gates operative to open or seal the ports to the passage of water. In an exemplary embodiment, the gates are sychronized by shafts so that the ingress ports of each chamber are connected to the egress ports of each other chamber. Thus, one set of gates is closed, while the other is open, thereby allowing water to flow into one chamber and build air pressure therein and allowing water to flow out of the other chamber and create a partial vacuum therein. A pipe connects the chambers, and an air turbine harnesses the air movement within the pipe. When water levels are equilibrated, the open set of gates is closed by a counterweight, and the other set is allowed to open by natural force of the water differential. The water gates may be comprised of a plurality of louvers which are ganged for simultaneous opening and closing. The system is designed to operate with air turbines or other pneumatic devices. Its design minimizes construction cost and environmental impact, yet provides a clean renewable energy source.

Gorlov, Alexander M. (Brookline, MA)

1991-01-01T23:59:59.000Z

369

Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders February 28, 2012 - 7:02am Addthis Washington D.C. - This week, the Advanced Research Projects Agency - Energy (ARPA-E) is hosting its third annual Energy Innovation Summit, which is designed to unite key players from all sectors of America's energy innovation community to share ideas for how to lead the world in the development of next generation clean energy technologies, develop our nation's energy resources, and build an American economy that lasts. Tomorrow's full agenda with speakers is below. For specific press requests, please contact Keri Fulton at keri.fulton@hq.doe.gov.

370

Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders February 28, 2012 - 7:02am Addthis Washington D.C. - This week, the Advanced Research Projects Agency - Energy (ARPA-E) is hosting its third annual Energy Innovation Summit, which is designed to unite key players from all sectors of America's energy innovation community to share ideas for how to lead the world in the development of next generation clean energy technologies, develop our nation's energy resources, and build an American economy that lasts. Tomorrow's full agenda with speakers is below. For specific press requests, please contact Keri Fulton at keri.fulton@hq.doe.gov.

371

ARPA-E Announces 2012 Energy Innovation Summit Featuring Bill Gates, Fred  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Announces 2012 Energy Innovation Summit Featuring Bill Announces 2012 Energy Innovation Summit Featuring Bill Gates, Fred Smith and Lee Scott ARPA-E Announces 2012 Energy Innovation Summit Featuring Bill Gates, Fred Smith and Lee Scott September 9, 2011 - 9:25am Addthis New York, NY - The U.S. Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) Director, Arun Majumdar, announced yesterday that the Agency will hold its third annual ARPA-E Energy Innovation Summit from February 27 - 29, 2012 at the Gaylord Convention Center just outside Washington, D.C. Bill Gates, founder and chairman of Microsoft; Fred Smith, chairman, president and CEO of FedEx; and Lee Scott, former CEO of Wal-Mart; will join Secretary Chu and Director Majumdar as distinguished keynote speakers. "After two successful Summits, I'm excited to once again bring some of

372

Optical imaging through turbid media with a degenerate four-wave mixing correlation time gate  

DOE Patents (OSTI)

Optical imaging through turbid media is demonstrated using a degenerate four-wave mixing correlation time gate. An apparatus and method for detecting ballistic and/or snake light while rejecting unwanted diffusive light for imaging structures within highly scattering media are described. Degenerate four-wave mixing (DFWM) of a doubled YAG laser in rhodamine 590 is used to provide an ultrafast correlation time gate to discriminate against light that has undergone multiple scattering and therefore has lost memory of the structures within the scattering medium. Images have been obtained of a test cross-hair pattern through highly turbid suspensions of whole milk in water that are opaque to the naked eye, which demonstrates the utility of DFWM for imaging through turbid media. Use of DFWM as an ultrafast time gate for the detection of ballistic and/or snake light in optical mammography is discussed.

Sappey, Andrew D. (Golden, CO)

1998-04-14T23:59:59.000Z

373

Graphene Enabled Low-Control Quantum Gates between Static and Mobile Spins  

E-Print Network (OSTI)

We show that the feature of Klein tunneling makes graphene a unique interface for implementing low control quantum gates between static and mobile qubits. A ballistic electron spin is considered as the mobile qubit, while the static qubit is the electronic spin of a quantum dot fixed in a graphene nanoribbon. Scattering is the low control mechanism of the gate, which, in other systems, is really difficult to exploit because of both back-scattering and the momentum dependence of scattering. We find that Klein tunneling enables the implementation of quasi-deterministic quantum gates regardless of the momenta or the shape of the wave function of the incident electron. The Dirac equation is used to describe the system in the one particle approximation with the interaction between the static and the mobile spins modelled by a Heisenberg Hamiltonian. Furthermore, we discuss an application of this model to generate entanglement between two well separated static qubits.

G. Cordourier-Maruri; Y. Omar; R. de Coss; S. Bose

2013-06-30T23:59:59.000Z

374

Understanding the defect structure of solution grown zinc oxide  

Science Conference Proceedings (OSTI)

Zinc oxide (ZnO) is a wide bandgap semiconducting oxide with many potential applications in various optoelectronic devices such as light emitting diodes (LEDs) and field effect transistors (FETs). Much effort has been made to understand the ZnO structure and its defects. However, one major issue in determining whether it is Zn or O deficiency that provides ZnO its unique properties remains. X-ray absorption spectroscopy (XAS) is an ideal, atom specific characterization technique that is able to probe defect structure in many materials, including ZnO. In this paper, comparative studies of bulk and aqueous solution grown ({lighting and other optoelectronic device applications. - Graphical abstract: Highlights: Black-Right-Pointing-Pointer ZnO powders have been synthesized through an aqueous solution method. Black-Right-Pointing-Pointer Defect structure studied using XAS and XPDF. Black-Right-Pointing-Pointer Zn-Zn correlations are less in the ZnO powders synthesized in solution than bulk. Black-Right-Pointing-Pointer Zn vacancies are present in the powders synthesized. Black-Right-Pointing-Pointer EXAFS and XPDF, when used complementary, are useful characterization techniques.

Liew, Laura-Lynn [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, Block N4.1 Nanyang Avenue, Singapore 639798 (Singapore); Sankar, Gopinathan, E-mail: g.sankar@ucl.ac.uk [Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Handoko, Albertus D. [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); Goh, Gregory K.L., E-mail: g-goh@imre.a-star.edu.sg [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, Block N4.1 Nanyang Avenue, Singapore 639798 (Singapore); Kohara, Shinji [Japan Synchrotron Radiation Research Institute (JASRI), Mikazuki, Sayo, Hyogo 679-5198 (Japan)

2012-05-15T23:59:59.000Z

375

High-fidelity CZ gate for resonator-based superconducting quantum computers  

E-Print Network (OSTI)

A possible building block for a scalable quantum computer has recently been demonstrated [M. Mariantoni et al., Science 334, 61 (2011)]. This architecture consists of superconducting qubits capacitively coupled both to individual memory resonators as well as a common bus. In this work we study a natural primitive entangling gate for this and related resonator-based architectures, which consists of a CZ operation between a qubit and the bus. The CZ gate is implemented with the aid of the non-computational qubit |2> state [F. W. Strauch et al., Phys. Rev. Lett. 91, 167005 (2003)]. Assuming phase or transmon qubits with 300 MHz anharmonicity, we show that by using only low frequency qubit-bias control it is possible to implement the qubit-bus CZ gate with 99.9% (99.99%) fidelity in about 17ns (23ns) with a realistic two-parameter pulse profile, plus two auxiliary z rotations. The fidelity measure we refer to here is a state-averaged intrinsic process fidelity, which does not include any effects of noise or decoherence. These results apply to a multi-qubit device that includes strongly coupled memory resonators. We investigate the performance of the qubit-bus CZ gate as a function of qubit anharmonicity, indentify the dominant intrinsic error mechanism and derive an associated fidelity estimator, quantify the pulse shape sensitivity and precision requirements, simulate qubit-qubit CZ gates that are mediated by the bus resonator, and also attempt a global optimization of system parameters including resonator frequencies and couplings. Our results are relevant for a wide range of superconducting hardware designs that incorporate resonators and suggest that it should be possible to demonstrate a 99.9% CZ gate with existing transmon qubits, which would constitute an important step towards the development of an error-corrected superconducting quantum computer.

Joydip Ghosh; Andrei Galiautdinov; Zhongyuan Zhou; Alexander N. Korotkov; John M. Martinis; Michael R. Geller

2013-01-08T23:59:59.000Z

376

The robustness of magic state distillation against errors in Clifford gates  

E-Print Network (OSTI)

Quantum error correction and fault-tolerance have provided the possibility for large scale quantum computations without a detrimental loss of quantum information. A very natural class of gates for fault-tolerant quantum computation is the Clifford gate set and as such their usefulness for universal quantum computation is of great interest. Clifford group gates augmented by magic state preparation give the possibility of simulating universal quantum computation. However, experimentally one cannot expect to perfectly prepare magic states. Nonetheless, it has been shown that by repeatedly applying operations from the Clifford group and measurements in the Pauli basis, the fidelity of noisy prepared magic states can be increased arbitrarily close to a pure magic state [1]. We investigate the robustness of magic state distillation to perturbations of the initial states to arbitrary locations in the Bloch sphere due to noise. Additionally, we consider a depolarizing noise model on the quantum gates in the decoding section of the distillation protocol and demonstrate its effect on the convergence rate and threshold value. Finally, we establish that faulty magic state distillation is more efficient than fault-tolerance-assisted magic state distillation at low error rates due to the large overhead in the number of quantum gates and qubits required in a fault-tolerance architecture. The ability to perform magic state distillation with noisy gates leads us to conclude that this could be a realistic scheme for future small-scale quantum computing devices as fault-tolerance need only be used in the final steps of the protocol.

Tomas Jochym-O'Connor; Yafei Yu; Bassam Helou; Raymond Laflamme

2012-05-30T23:59:59.000Z

377

Partial oxidation catalyst  

DOE Patents (OSTI)

A two-part catalyst comprising a dehydrogenation portion and an oxide-ion conducting portion. The dehydrogenation portion is a group VIII metal and the oxide-ion conducting portion is selected from a ceramic oxide crystallizing in the fluorite or perovskite structure. There is also disclosed a method of forming a hydrogen rich gas from a source of hydrocarbon fuel in which the hydrocarbon fuel contacts a two-part catalyst comprising a dehydrogenation portion and an oxide-ion conducting portion at a temperature not less than about 400.degree. C. for a time sufficient to generate the hydrogen rich gas while maintaining CO content less than about 5 volume percent. There is also disclosed a method of forming partially oxidized hydrocarbons from ethanes in which ethane gas contacts a two-part catalyst comprising a dehydrogenation portion and an oxide-ion conducting portion for a time and at a temperature sufficient to form an oxide.

Krumpelt, Michael (Naperville, IL); Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Doshi, Rajiv (Downers Grove, IL)

2000-01-01T23:59:59.000Z

378

Fabrication and characterization of GaN junction field effect transistors  

SciTech Connect

Junction field effect transistors (JFET) were fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition. The DC and microwave characteristics, as well as the high temperature performance of the devices were studied. These devices exhibited excellent pinch-off and a breakdown voltage that agreed with theoretical predictions. An extrinsic transconductance (g{sub m}) of 48 mS/mm was obtained with a maximum drain current (I{sub D}) of 270 mA/mm. The microwave measurement showed an f{sub T} of 6 GHz and an f{sub max} of 12 GHz. Both the I{sub D} and the g{sub m} were found to decrease with increasing temperature, possibly due to lower electron mobility at elevated temperatures. These JFETs exhibited a significant current reduction after a high drain bias was applied, which was attributed to a partially depleted channel caused by trapped electrons in the semi-insulating GaN buffer layer.

Zhang, L.; Lester, L.F.; Baca, A.G.; Shul, R.J.; Chang, P.C.; Willison, C.L.; Mishra, U.K.; Denbaars, S.P.; Zolper, J.C.

2000-01-11T23:59:59.000Z

379

Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance  

DOE Patents (OSTI)

A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is formed and a single anneal at moderate temperature is then performed. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions co-implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region of the Si-channel tail, but does not contribute substantially to the acceptor concentration in the buried p region. As a result, the invention provides for improved field effect semiconductor and related devices with enhancement of both DC and high-frequency performance.

Zolper, John C. (Vienna, VA); Sherwin, Marc E. (Rockville, MD); Baca, Albert G. (Albuquerque, NM)

2000-01-01T23:59:59.000Z

380

Single-photon two-qubit SWAP gate for entanglement manipulation  

E-Print Network (OSTI)

A SWAP operation between different types of qubits of single photons is essential for manipulating hyperentangled photons for a variety of applications. We have implemented an efficient SWAP gate for the momentum and polarization degrees of freedom of single photons. The SWAP gate was utilized in a single-photon two-qubit quantum logic circuit to deterministically transfer momentum entanglement between a pair of down-converted photons to polarization entanglement. The polarization entanglement thus obtained violates Bell's inequality by more than 150 standard deviations.

Marco Fiorentino; Taehyun Kim; Franco N. C. Wong

2004-07-16T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

A Radar Study of Convective Cells in Mesoscale Systems in GATE. Part II: Life Cycles of Convective Cells  

Science Conference Proceedings (OSTI)

This is Part II of a two-part paper describing the vertical profile of radar reflectivity in GATE convective cells. Time-height radar life histories for 42 cells over three GATE days are examined, using data from the Quadra radar with 5-minute ...

Edward J. Szoke; Edward J. Zipser

1986-01-01T23:59:59.000Z

382

Recovery of negative bias temperature instability induced degradation of p-MOSFETs with SiON gate dielectric  

Science Conference Proceedings (OSTI)

This paper investigates the recovery property of p-MOSFETs with an ultra-thin SiON gate dielectric which are degraded by negative bias temperature instability (NBTI). The experimental results indicate that the recovery of the NBTI degradation occurs ... Keywords: Gate dielectric, MOSFET, Negative bias temperature instability (NBTI), Reliability, Silicon oxynitride

Y. D. Kim; S. U. Han; H. S. Kang; B. K. Kang

2008-09-01T23:59:59.000Z

383

The progress and challenges of threshold voltage control of high-k/metal-gated devices for advanced technologies (Invited Paper)  

Science Conference Proceedings (OSTI)

This paper discusses recent progress in and challenges of threshold voltage control for advanced high-k/metal-gated (HKMG) devices. It presents the impact on threshold voltage (V"t) control of incorporating La and Al into HKMG devices. A dipole moment ... Keywords: CMOS, Capping layer, EOT, High-k, Metal gate, Threshold voltage control

Hsing-Huang Tseng; Paul Kirsch; C. S. Park; Gennadi Bersuker; Prashant Majhi; Muhammad Hussain; Raj Jammy

2009-07-01T23:59:59.000Z

384

Crystal Structure of the Mammalian GIRK2 KplusChannel and Gating Regulation by G Proteins PIP2 and Sodium  

SciTech Connect

G protein-gated K{sup +} channels (Kir3.1--Kir3.4) control electrical excitability in many different cells. Among their functions relevant to human physiology and disease, they regulate the heart rate and govern a wide range of neuronal activities. Here, we present the first crystal structures of a G protein-gated K{sup +} channel. By comparing the wild-type structure to that of a constitutively active mutant, we identify a global conformational change through which G proteins could open a G loop gate in the cytoplasmic domain. The structures of both channels in the absence and presence of PIP{sub 2} suggest that G proteins open only the G loop gate in the absence of PIP{sub 2}, but in the presence of PIP{sub 2} the G loop gate and a second inner helix gate become coupled, so that both gates open. We also identify a strategically located Na{sup +} ion-binding site, which would allow intracellular Na{sup +} to modulate GIRK channel activity. These data provide a structural basis for understanding multiligand regulation of GIRK channel gating.

M Whorton; R MacKinnon

2011-12-31T23:59:59.000Z

385

A field programmable gate array unit for the diagnosis and control of neoclassical tearing modes on MAST  

E-Print Network (OSTI)

A field programmable gate array unit for the diagnosis and control of neoclassical tearing modes OF SCIENTIFIC INSTRUMENTS 83, 10E312 (2012) A field programmable gate array unit for the diagnosis and control, University of York, York YO10 5DD, United Kingdom 2 EURATOM/CCFE Fusion Association, Culham Science Centre

386

Open-ended Taiwan history and spirit-oriented cultural politics : a study of Cloud Gate's works in the postcolonial and global age  

E-Print Network (OSTI)

The Novel and Literary History (1934-41). The BakhtinCorporealizing Taiwans History: Cloud Gates Portrait ofZhang 116-135. ---. Dance History and Cultural Politics: A

Wei, Ling-Chen

2010-01-01T23:59:59.000Z

387

Structure of Pentacene Monolayers on Amorphous Silicon Oxide...  

NLE Websites -- All DOE Office Websites (Extended Search)

and potential applications in low-cost electronics such as organic light emitting diode (OLED) displays, thin film transistors and related applications (e.g. TFT...

388

A CAD tool for the power estimation of CMOS, BiCMOS and BiNMOS gates  

E-Print Network (OSTI)

This thesis describes a CAD tool for the power estimation of CMOS, BiCMOS and BiNMOS gates. Using analytical models for the transient behavior of the gates, accurate estimates of the power dissipated by each type of gate during a typical transition are arrived at. The values thus obtained show a very good agreement with those obtained from HSPICE simulations. A detailed transient analysis is performed on the BiCMOS gate in particular and a expression for the current response is derived. This piecewise expression accurately models the current behavior of the BICMOS gate taking into account all important second-order effects. The current expression obtained enables a quick and accurate estimate of the power dissipation.

Islam, Kazi Inamul

1995-01-01T23:59:59.000Z

389

A hot oxidant, 3-NO[subscript 2]Y[subscript 122] radical, unmasks conformational gating in reductase  

E-Print Network (OSTI)

Escherichia coli ribonucleotide reductase is an ?2?2 complex that catalyzes the conversion of nucleotides to deoxynucleotides and requires a diferric-tyrosyl radical (Y[superscript ]) cofactor to initiate catalysis. The ...

Yokoyama, Kenichi

390

Barium oxide, calcium oxide, magnesia, and alkali oxide free glass  

DOE Patents (OSTI)

A glass composition consisting essentially of about 10-45 mole percent of SrO; about 35-75 mole percent SiO.sub.2; one or more compounds from the group of compounds consisting of La.sub.2O.sub.3, Al.sub.2O.sub.3, B.sub.2O.sub.3, and Ni; the La.sub.2O.sub.3 less than about 20 mole percent; the Al.sub.2O.sub.3 less than about 25 mole percent; the B.sub.2O.sub.3 less than about 15 mole percent; and the Ni less than about 5 mole percent. Preferably, the glass is substantially free of barium oxide, calcium oxide, magnesia, and alkali oxide. Preferably, the glass is used as a seal in a solid oxide fuel/electrolyzer cell (SOFC) stack. The SOFC stack comprises a plurality of SOFCs connected by one or more interconnect and manifold materials and sealed by the glass. Preferably, each SOFC comprises an anode, a cathode, and a solid electrolyte.

Lu, Peizhen Kathy; Mahapatra, Manoj Kumar

2013-09-24T23:59:59.000Z

391

Numerical analysis of the heat transfer for packing design of cryogenic gate valve  

Science Conference Proceedings (OSTI)

The packing, among the components comprising the gate valve, is used to sustain the airtightness and the study on change of shape or pattern has been carried out to maximize the functions, but the study on changing the location or the size of the packing ... Keywords: cryogenic, heat transfer, liquefied natural gas, numerical analysis, packing

Si Pom Kim; Rock Won Jeon; Il Ju Hwang; Jae Hoon Lee; Won Heaop Shin

2012-04-01T23:59:59.000Z

392

Method and system for measuring gate valve clearances and seating force  

DOE Patents (OSTI)

Valve clearances and seating force, as well as other valve operational parameters, are determined by measuring valve stem rotation during opening and closing operations of a translatable gate valve. The magnitude of the stem rotation, and the relative difference between the stem rotation on opening and closing provides valuable data on the valve internals in a non-intrusive manner.

Casada, Donald A. (Knoxville, TN); Haynes, Howard D. (Knoxville, TN); Moyers, John C. (Oak Ridge, TN); Stewart, Brian K. (Burns, TN)

1996-01-01T23:59:59.000Z

393

Guardians at the Gates of Hell Estimating the Risk of Nuclear Theft and Terrorism  

E-Print Network (OSTI)

of nuclear theft in Russia, Pakistan, and from HEU-fueled research reactors are highlighted. SecondGuardians at the Gates of Hell Estimating the Risk of Nuclear Theft and Terrorism ­ and Identifying the Highest-Priority Risks of Nuclear Theft by Matthew Bunn SB and SM, Political Science, MIT, 1985 SUBMITTED

de Weck, Olivier L.

394

Numerical Modeling of a Line of Towering Cumulus on Day 226 of GATE  

Science Conference Proceedings (OSTI)

A three-dimensional numerical model with warm rain bulk cloud physics is used to investigate the shallow convection observed on day 226 of GATE. This convection had cloud tops at 3.0 km, cloud bases at 0.4 km and approximately 0.1 cm of rain at ...

Frank B. Lipps; Richard S. Hemler

1988-09-01T23:59:59.000Z

395

Investigating physical and chemical changes in high-k gate stacks using nanoanalytical electron microscopy  

Science Conference Proceedings (OSTI)

The thermal budget involved in processing high-k gate stacks can cause undesirable physical and chemical changes which limit device performance. The transmission electron microscope and associated analytical techniques provide a way of investigating ... Keywords: Electron energy loss near edge structure, Electron energy loss spectroscopy, High-k dielectrics, Nanoanalytical electron microscopy

A. J. Craven; M. MacKenzie; D. W. McComb; F. T. Docherty

2005-06-01T23:59:59.000Z

396

Analyzing Combined Impacts of Parameter Variations and BTI in Nano-scale Logical Gates  

E-Print Network (OSTI)

Analyzing Combined Impacts of Parameter Variations and BTI in Nano-scale Logical Gates Seyab Khan conclusions. 2 Background and Analysis Framework Fig. 1(a) shows the threshold voltage increment (Vth) due variation, delay model, and presents the analysis framework. First MEDIAN Workshop 2012 7 #12;2 Seyab Khan

Hamdioui, Said

397

A quantum logic gate between a solid-state quantum bit and a photon  

E-Print Network (OSTI)

Integrated quantum photonics provides a promising route towards scalable solid-state implementations of quantum networks, quantum computers, and ultra-low power opto-electronic devices. A key component for many of these applications is the photonic quantum logic gate, where the quantum state of a solid-state quantum bit (qubit) conditionally controls the state of a photonic qubit. These gates are crucial for development of robust quantum networks, non-destructive quantum measurements, and strong photon-photon interactions. Here we experimentally realize a quantum logic gate between an optical photon and a solid-state qubit. The qubit is composed of a quantum dot (QD) strongly coupled to a nano-cavity, which acts as a coherently controllable qubit system that conditionally flips the polarization of a photon on picosecond timescales, implementing a controlled-NOT (cNOT) gate. Our results represent an important step towards solid-state quantum networks and provide a versatile approach for probing QD-photon inter...

Kim, Hyochul; Shen, Thomas C; Solomon, Glenn S; Waks, Edo; 10.1038/nphoton.2013.48

2013-01-01T23:59:59.000Z

398

UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence  

DOE Green Energy (OSTI)

UC Davis??s existing GATE centers have become the campus??s research focal points on fuel cells and hybrid-electric vehicles, and the home for graduate students who are studying advanced automotive technologies. The centers have been highly successful in attracting, training, and placing top-notch students into fuel cell and hybrid programs in both industry and government.

Erickson, Paul

2012-05-31T23:59:59.000Z

399

Useful-Skew Clock Routing with Gate Sizing for Low Power Design  

Science Conference Proceedings (OSTI)

This paper presents a new problem formulation and algorithm of clock routing combined with gate sizing for minimizing total logic and clock power. Instead of zero-skew or assuming a fixed skew bound, we seek to produce useful skews in clock routing. ...

Joe Gufeng Xi; Wayne Wei-Ming Dai

1997-07-01T23:59:59.000Z

400

Basic State Energy Budget Analysis for Phases 1, 2 and 3 of GATE  

Science Conference Proceedings (OSTI)

A diagnostic study of the budget of zonal and eddy components of available potential and kinetic energy is presented for the large-scale basic (time-averaged) state of the atmosphere for Phases 1, 2 and 3 of GATE. The Final Validated Data Set (...

Randy A. Peppler; Dayton G. Vincent

1983-02-01T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

A Diagnostic Study of the Diurnal Rainfall Variation in the GATE B-Scale Area  

Science Conference Proceedings (OSTI)

Heat and moisture budgets are used to compute net condensation rates in the GATE B-scale network for four hours of the day: 0000, 0600, 1200 and 1800 GMT. Budgets are presented for all phases combined, for selected periods of enhanced convection ...

Mark D. Albright; Donald R. Mock; Ernest E. Recker; Richard J. Reed

1981-07-01T23:59:59.000Z

402

The Surface Wave Environment In the GATE B/C ScalePhase III  

Science Conference Proceedings (OSTI)

The surface wave environment in the GATE B/C scale is described from wave measurements made from buoys and aircraft during Phase III (September 1974). Particular emphasis is given to the wave measurements made from the pitch-roll buoy deployed in ...

V. Cardone; H. Carlson; J. A. Ewing; K. Hasselmann; S. Lazanoff; W. McLeish; D. Ross

1981-09-01T23:59:59.000Z

403

US DOE Sponsored Graduate Automotive Technology Education (GATE) Program at Penn State Emphasizing  

E-Print Network (OSTI)

- power in-vehicle energy storage for hybrid electric and fuel cell vehicles covering the fundamental into energy storage curriculum including vehicle topologies, advanced combustion, fuel cells, power from DOE. ME 597F HIL Advanced Vehicles (3) Contact: Joel R. Anstrom Director of Penn State GATE Center

Lee, Dongwon

404

A low-power, multichannel gated oscillator-based CDR for short-haul applications  

Science Conference Proceedings (OSTI)

A gated current-controlled oscillator (GCCO) based topology is used to implement a low-power multi-channel clock and data recovery (CDR) system in a 0.18um digital CMOS technology. A systematic approach is presented to design a reliable and low-power ...

Armin Tajalli; Paul Muller; Mojtaba Atarodi; Yusuf Leblebici

2005-08-01T23:59:59.000Z

405

Novel universal threshold logic gate based on RTD and its application  

Science Conference Proceedings (OSTI)

Resonant tunneling diodes (RTDs) are receiving much attention because of their high-speed switching capability and functional versatility. Due to the negative differential resistance exhibited by RTDs, great functionality with a single gate can be achieved. ... Keywords: Monostable-bistable logic element (MOBILE), Resonant tunneling diode (RTD), Spectral technology, Threshold logic

Yi Wei; Jizhong Shen

2011-06-01T23:59:59.000Z

406

Effect of lateral strain on gate induced control of electrical conduction in single layer graphene device  

Science Conference Proceedings (OSTI)

We study numerically the effect of various types of in-plane strain on the electronic transport property in the single layer graphene connected to two metallic electrodes, with the special attention to the dependences on the gate voltage, channel length, ... Keywords: Electronic transport, Graphene, Strain

Satofumi Souma; Yusuke Ohmi; Matsuto Ogawa

2013-06-01T23:59:59.000Z

407

PGCapping: exploiting power gating for power capping and core lifetime balancing in CMPs  

Science Conference Proceedings (OSTI)

Optimizing the performance of a chip multiprocessor (CMP) within a power cap has recently received a lot of attention. However, most existing solutions rely solely on DVFS, which is anticipated to have only limited actuation ranges in the future. Power ... Keywords: chip multiprocessor, control theory, lifetime balancing, power capping, power control, power gating

Kai Ma; Xiaorui Wang

2012-09-01T23:59:59.000Z

408

Characterization of voltage-gated ionic currents in a peripheral sensory neuron in larval Drosophila  

E-Print Network (OSTI)

the normalized I-V relationship for INa in larval dbds (n = 8). These data show that in dbds, INa begins to activate at - 50 to -40 mV and reaches peak amplitude at -30 to -20 mV. Discussion In this study, we have presented measurements of volt- age-gated ionic...

Nair, Amit; Bate, Michael; Pulver, Stefan R

2010-06-02T23:59:59.000Z

409

Multifunctional Oxide Heterostructures  

Science Conference Proceedings (OSTI)

This book is devoted to the rapidly developing field of oxide thin-films and heterostructures. Oxide materials combined with atomic-scale precision in a heterostructure exhibit an abundance of macroscopic physical properties involving the strong coupling between the electronic, spin, and structural degrees of freedom, and the interplay between magnetism, ferroelectricity, and conductivity. Recent advances in thin-film deposition and characterization techniques made possible the experimental realization of such oxide heterostructures, promising novel functionalities and device concepts.

Tsymbal, E Y [University of Nebraska, Lincoln; Dagotto, Elbio R [ORNL; Eom, Professor Chang-Beom [University of Wisconsin, Madison; Ramesh, Ramamoorthy [University of California, Berkeley

2012-01-01T23:59:59.000Z

410

METAL OXIDE NANOPARTICLES  

SciTech Connect

This chapter covers the fundamental science, synthesis, characterization, physicochemical properties and applications of oxide nanomaterials. Explains fundamental aspects that determine the growth and behavior of these systems, briefly examines synthetic procedures using bottom-up and top-down fabrication technologies, discusses the sophisticated experimental techniques and state of the art theory results used to characterize the physico-chemical properties of oxide solids and describe the current knowledge concerning key oxide materials with important technological applications.

FERNANDEZ-GARCIA,M.; RODGRIGUEZ, J.A.

2007-10-01T23:59:59.000Z

411

Dosimetric effect of intrafraction tumor motion in phase gated lung stereotactic body radiotherapy  

Science Conference Proceedings (OSTI)

Purpose: A major concern for lung intensity modulated radiation therapy delivery is the deviation of actually delivered dose distribution from the planned one due to simultaneous movements of multileaf collimator (MLC) leaves and tumor. For gated lung stereotactic body radiotherapy treatment (SBRT), the situation becomes even more complicated because of SBRT's characteristics such as fewer fractions, smaller target volume, higher dose rate, and extended fractional treatment time. The purpose of this work is to investigate the dosimetric effect of intrafraction tumor motion during gated lung SBRT delivery by reconstructing the delivered dose distribution with real-time tumor motion considered. Methods: The tumor motion data were retrieved from six lung patients. Each of them received three fractions of stereotactic radiotherapy treatments with Cyberknife Synchrony (Accuray, Sunnyvale, CA). Phase gating through an external surrogate was simulated with a gating window of 5 mm. The resulting residual tumor motion curves during gating (beam-on) were retrieved. Planning target volume (PTV) was defined as physician-contoured clinical target volume (CTV) surrounded by an isotropic 5 mm margin. Each patient was prescribed with 60 Gy/3 fractions. The authors developed an algorithm to reconstruct the delivered dose with tumor motion. The DMLC segments, mainly leaf position and segment weighting factor, were recalculated according to the probability density function of tumor motion curve. The new DMLC sequence file was imported back to treatment planning system to reconstruct the dose distribution. Results: Half of the patients in the study group experienced PTV D95% deviation up to 26% for fractional dose and 14% for total dose. CTV mean dose dropped by 1% with tumor motion. Although CTV is almost covered by prescribed dose with 5 mm margin, qualitative comparison on the dose distributions reveals that CTV is on the verge of underdose. The discrepancy happens due to tumor excursion outside of the gating window, which, for our study group, is mainly caused by baseline shift, i.e., the change in general trend of the motion curve during extended period of treatment time. Conclusions: The dose deviation in PTV and CTV due to target motion is not always negligible in gated SBRT. Although CTVs are covered sufficiently with prescribed dose in most cases, some are on the verge of underdose due to large tumor excursion caused by factors such as baseline shift.

Zhao Bo; Yang Yong; Li Tianfang; Li Xiang; Heron, Dwight E.; Huq, M. Saiful [Department of Radiation Oncology, University of Pittsburgh Cancer Institute, Pittsburgh, Pennsylvania 15232 (United States) and Department of Radiation Oncology, UT Southwestern Medical Center, Dallas, Texas 75390 (United States); Department of Radiation Oncology, University of Pittsburgh Cancer Institute, Pittsburgh, Pennsylvania 15232 (United States)

2012-11-15T23:59:59.000Z

412

Defect Structure of Oxides  

Science Conference Proceedings (OSTI)

Table 1   Classification of electrical conductors: oxides, sulfides, and nitrides...2 O 4 , NiAl 2 O 4 , (Tl 2 O),

413

Oxidation of gallium arsenide  

DOE Patents (OSTI)

This invention relates to gallium arsenide semiconductors and, more particularly, to the oxidation of surface layers of gallium arsenide semiconductors for semiconductor device fabrication.

Hoffbauer, M.A.; Cross, J.B.

1991-11-16T23:59:59.000Z

414

Oxidation/Coatings  

Science Conference Proceedings (OSTI)

Oct 28, 2009 ... International Symposium on Ceramic Matrix Composites: Oxidation/ ... on combustor liners of a Solar Turbines' industrial gas turbine engine,...

415

H{sup -} beam extraction from a cesium seeded field effect transistor based radio frequency negative hydrogen ion source  

SciTech Connect

H{sup -} beam was successfully extracted from a cesium seeded ion source operated using a field effect transistor inverter power supply as a radio frequency (RF) wave source. High density hydrogen plasma more than 10{sup 19} m{sup -3} was obtained using an external type antenna with RF frequency of lower than 0.5 MHz. The source was isolated by an isolation transformer and H{sup -} ion beam was extracted from a single aperture. Acceleration current and extraction current increased with the increase of extraction voltage. Addition of a small amount of cesium vapor into the source enhanced the currents.

Ando, A.; Matsuno, T.; Funaoi, T.; Tanaka, N. [School of Engineering, Tohoku University, Sendai 980-8579 (Japan); Tsumori, K.; Takeiri, Y. [National Institute for Fusion Science, Toki 509-5292 (Japan)

2012-02-15T23:59:59.000Z

416

Stabilized chromium oxide film  

DOE Patents (OSTI)

Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

Garwin, Edward L. (Los Altos, CA); Nyaiesh, Ali R. (Palo Alto, CA)

1988-01-01T23:59:59.000Z

417

Stabilized chromium oxide film  

DOE Patents (OSTI)

Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150A are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

Nyaiesh, A.R.; Garwin, E.L.

1986-08-04T23:59:59.000Z

418

High fidelity gate operations within the coupled nuclear and electron spins of a nitrogen vacancy center in diamond  

E-Print Network (OSTI)

In this article we investigate the dynamics of a single negatively charged nitrogen-vacancy center (NV-) coupled to the spin of the nucleus of a 15-nitrogen atom and show that high fidelity gate operations are possible without the need for complicated composite pulse sequences. These operations include both the electron and nuclear spin rotations, as well as an entangling gate between them. These are experimentally realizable gates with current technology of sufficiently high fidelities that they can be used to build graph states for quantum information processing tasks.

Mark S. Everitt; Simon Devitt; W. J. Munro; Kae Nemoto

2013-09-12T23:59:59.000Z

419

Oxidative Degradation of Monoethanolamine  

NLE Websites -- All DOE Office Websites (Extended Search)

Oxidative Degradation of Monoethanolamine Oxidative Degradation of Monoethanolamine Susan Chi Gary T. Rochelle* (gtr@che.utexas.edu, 512-471-7230) The University of Texas at Austin Department of Chemical Engineering Austin, Texas 78712 Prepared for presentation at the First National Conference on Carbon Sequestration, Washington, DC, May 14-17, 2001 Abstract Oxidative degradation of monoethanolamine (MEA) was studied under typical absorber condition of 55°C. The rate of evolution of NH 3 , which was indicative of the overall rate of degradation, was measured continuously in a batch system sparged with air. Dissolved iron from 0.0001 mM to 1 mM yields oxidation rates from 0.37 to 2 mM/hr in MEA solutions loaded with 0.4 mole CO 2 / mole MEA. Ethylenediaminetetraacetic acid (EDTA) and N,N-bis(2- hydroxyethyl)glycine effectively decrease the rate of oxidation in the presence of iron by 40 to

420

Graphene electrodes for n-type organic field-effect transistors  

Science Conference Proceedings (OSTI)

This work presents a convenient and contamination safe E-beam lithography process for microstructuring of graphene flakes. Exfoliated graphene flakes were deposited on oxidized silicon wafers and subsequently patterned by E-beam lithography, to be used ... Keywords: E-beam lithography, Graphene, OFET

Henrik H. Henrichsen; Peter Bggild

2010-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Toxic gas sensors using thin film transistor platform at low temperature  

E-Print Network (OSTI)

Semiconducting metal-oxides such as SnO?, TiO?, ZnO and WO? are commonly used for gas sensing in the form of thin film resistors (TFRs) given their high sensitivity to many vapor species, simple construction and capability ...

Jin, Yoonsil

2009-01-01T23:59:59.000Z

422

Gallium-Nitride Transistors for High-Efficiency Industrial Power Supplies, Phase 1: State of Semiconductor Development and Industrial Power Supply Market  

Science Conference Proceedings (OSTI)

This white paper describes recent advancements in the development of Gallium-Nitride (GaN) transistors for power conversion applications. This wide bandgap semiconductor has the potential to reduce losses and improve performance of power converters. The industrial power supply market is described and the application of GaN to power conversion in this segment is introduced for future work.

2013-12-23T23:59:59.000Z

423

MOLECULAR AND CELLULAR CONSEQUENCES OF DISEASE ASSOCIATED PROCESSING DEFECTS IN CONE PHOTORECEPTOR CYCLIC NUCLEOTIDE-GATED CHANNELS .  

E-Print Network (OSTI)

??Cyclic nucleotide-gated (CNG) channels are heterotetrameric (2A3:2B3) cation channels critical to the molecular cascade that couples light stimulus to membrane potential changes in photoreceptor cells. (more)

Duricka, Deborah Lynn

2011-01-01T23:59:59.000Z

424

An in depth examination of semi floating gate ultra low voltage flip-flops for high speed applications.  

E-Print Network (OSTI)

??In this thesis 4 different ultra low voltage (ULV) flip-flops are presented. Floating gates has been exploited to significantly increase the drain-source current. This technique (more)

Simenstad, Erik Jonathan

2013-01-01T23:59:59.000Z

425

ESS 2012 Peer Review - Notrees Wind Storage - Jeff Gates, Duke Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Notrees Energy Storage Project Notrees Energy Storage Project Jeff Gates Duke Energy jeff.gates@duke-energy.com Project Objectives * Use energy storage to increase the value and practical application of wind generation * Integrate storage with intermittent renewable energy production * Improve use of power-producing assets by storing energy during non-peak generation periods * Demonstrate benefits of using fast response energy storage to provide ancillary services for grid management * Verify that energy storage solutions can operate within the ERCOT market protocols * Demonstrate ramp control and Energy Storage System * Technology: Advanced lead-acid battery * OEM Partner - Xtreme Power (XP) * 36 MW / 24 MWh output * Modules housed in ~ 6,000 sq. ft. building Project Activities to Date * Site construction began December

426

Implications of Simultaneous Requirements for Low Noise Exchange Gates in Double Quantum Dots  

E-Print Network (OSTI)

Achieving low-error, exchange-interaction operations in quantum dots for quantum computing imposes simultaneous requirements on the exchange energy's dependence on applied voltages. A double quantum dot (DQD) qubit, approximated with a quadratic potential, is solved using a full configuration interaction method. This method is more accurate than Heitler-London and Hund-Mulliken approaches and captures new and significant qualitative behavior. We show that multiple regimes can be found in which the exchange energy's dependence on the bias voltage between the dots is compatible with current quantum error correction codes and state-of-the-art electronics. Identifying such regimes may prove valuable for the construction and operation of quantum gates that are robust to charge fluctuations, particularly in the case of dynamically corrected gates.

Nielsen, Erik; Muller, Richard P; Carroll, M S

2010-01-01T23:59:59.000Z

427

Implications of Simultaneous Requirements for Low Noise Exchange Gates in Double Quantum Dots  

E-Print Network (OSTI)

Achieving low-error, exchange-interaction operations in quantum dots for quantum computing imposes simultaneous requirements on the exchange energy's dependence on applied voltages. A double quantum dot (DQD) qubit, approximated with a quadratic potential, is solved using a full configuration interaction method. This method is more accurate than Heitler-London and Hund-Mulliken approaches and captures new and significant qualitative behavior. We show that multiple regimes can be found in which the exchange energy's dependence on the bias voltage between the dots is compatible with current quantum error correction codes and state-of-the-art electronics. Identifying such regimes may prove valuable for the construction and operation of quantum gates that are robust to charge fluctuations, particularly in the case of dynamically corrected gates.

Erik Nielsen; Ralph W. Young; Richard P. Muller; M. S. Carroll

2009-08-31T23:59:59.000Z

428

Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes  

E-Print Network (OSTI)

We present a practical and easy-to-implement method for high-speed near infrared single-photon detection based on InGaAs/InP single-photon avalanche photodiodes (SPADs), combining aspects of both sine gating and self-differencing techniques. At a gating frequency of 921 MHz and temperature of -30 $^{\\circ}$C we achieve: a detection efficiency of 9.3 %, a dark count probability of 2.8$\\times10^{-6}$ ns$^{-1}$, while the afterpulse probability is 1.6$\\times10^{-4}$ ns$^{-1}$, with a 10 ns "count-off time" setting. In principle, the maximum count rate of the SPAD can approach 100 MHz, which can significantly improve the performance for diverse applications.

Jun Zhang; Rob Thew; Claudio Barreiro; Hugo Zbinden

2009-08-16T23:59:59.000Z

429

An entangling quantum-logic gate operated with an ultrabright single photon-source  

E-Print Network (OSTI)

We demonstrate unambiguous entangling operation of a photonic quantum-logic gate driven by an ultrabright solid-state single-photon source. Indistinguishable single photons emitted by a single semiconductor quantum dot in a micropillar optical cavity are used as target and control qubits. For a source brightness of 0.56 collected photons-per-pulse, the measured truth table has an overlap with the ideal case of 68.4%, increasing to 73.0% for a source brightness of 0.17 photons- per-pulse. The gate is entangling: at a source brightness of 0.48, the Bell-state fidelity is above the entangling threshold of 50%, and reaches 71.0% for a source brightness of 0.15.

O. Gazzano; M. P. Almeida; A. K. Nowak; S. L. Portalupi; A. Lematre; I. Sagnes; A. G. White.; P. Senellart

2013-03-01T23:59:59.000Z

430

Space charge limited degradation of bipolar oxides at low electric-fields  

DOE Green Energy (OSTI)

Radiation-induced degradation of many types of bipolar transistors and circuits is more severe following low dose rate exposure than following high dose rate exposure. Since microelectronic devices in space are generally subjected to low dose rate irradiation, this complicates the hardness assurance testing of linear circuits and can lead to an overestimation of device lifetime in space. Previous work examining the physical mechanisms responsible for this dose rate effect has focused primarily on oxide trapped charge. Reduced net positive oxide trapped charge densities at high dose rates and zero bias have been attributed to space charge effects from slowly transporting holes trapped metastably at O vacancy complexes. Decreasing the dose rate or increasing the irradiation temperature leads to an increase in net positive oxide trapped charge near the Si-SiO{sub 2} interface by reducing these space charge effects. In this work, concentrations of hydrogen transport through two types of bipolar oxides are estimated from dopant passivation measurements in MOS capacitors. For unbiased irradiations, hydrogen passivation of substrate acceptors is greatly reduced at high dose rates compared to that at low dose rates or elevated temperatures. Consistent with other widely accepted models, it is argued that fewer interface traps are formed by high dose rate irradiation under zero bias, because fewer H{sup +} ions can drift to the Si-SiO{sub 2} interface and react with trap precursors. Similar to hole transport in these oxides, drift of the H{sup +} ions is inhibited at high dose rates by space charge accumulated in the oxide bulk.

Witczak, S.C.; Lacoe, R.C.; Mayer, D.C. [Aerospace Corp., Los Angeles, CA (United States). Electronics Technology Center; Fleetwood, D.M. [Sandia National Labs., Albuquerque, NM (United States); Schrimpf, R.D.; Galloway, K.F. [Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical and Computer Engineering

1998-03-01T23:59:59.000Z

431

Analysis of Lipid Oxidation  

Science Conference Proceedings (OSTI)

Analysis of Lipid Oxidation is essential for further developments in analytical methodology and hyphenated techniques, with which more understanding of the reaction kinetics, mechanism, and implications will take place. ...

432

Oxidative Tritium Decontamination System  

DOE Patents (OSTI)

The Oxidative Tritium Decontamination System, OTDS, provides a method and apparatus for reduction of tritium surface contamination on various items. The OTDS employs ozone gas as oxidizing agent to convert elemental tritium to tritium oxide. Tritium oxide vapor and excess ozone gas is purged from the OTDS, for discharge to atmosphere or transport to further process. An effluent stream is subjected to a catalytic process for the decomposition of excess ozone to diatomic oxygen. One of two configurations of the OTDS is employed: dynamic apparatus equipped with agitation mechanism and large volumetric capacity for decontamination of light items, or static apparatus equipped with pressurization and evacuation capability for decontamination of heavier, delicate, and/or valuable items.

Gentile, Charles A. (Plainsboro, NJ), Guttadora, Gregory L. (Highland Park, NJ), Parker, John J. (Medford, NJ)

2006-02-07T23:59:59.000Z

433

Cathodoluminescence of uranium oxides  

SciTech Connect

The cathodoluminescence of uranium oxide surfaces prepared in-situ from clean uranium exposed to dry oxygen was studied. The broad asymmetric peak observed at 470 nm is attributed to F-center excitation.

Winer, K.; Colmenares, C.; Wooten, F.

1984-08-09T23:59:59.000Z

434

Conservation-Law-Induced Quantum Limits for Physical Realizations of the Quantum NOT Gate  

E-Print Network (OSTI)

In recent investigations, it has been found that conservation laws generally lead to precision limits on quantum computing. Lower bounds of the error probability have been obtained for various logic operations from the commutation relation between the noise operator and the conserved quantity or from the recently developed universal uncertainty principle for the noise-disturbance trade-off in general measurements. However, the problem of obtaining the precision limit to realizing the quantum NOT gate has eluded a solution from these approaches. Here, we develop a new method for this problem based on analyzing the trace distance between the output state from the realization under consideration and the one from the ideal gate. Using the mathematical apparatus of orthogonal polynomials, we obtain a general lower bound on the error probability for the realization of the quantum NOT gate in terms of the number of qubits in the control system under the conservation of the total angular momentum of the computational qubit plus the the control system along the direction used to encode the computational basis. The lower bound turns out to be more stringent than one might expect from previous results. The new method is expected to lead to more accurate estimates for physical realizations of various types of quantum computations under conservation laws, and to contribute to related problems such as the accuracy of programmable quantum processors.

Tokishiro Karasawa; Masanao Ozawa

2007-05-14T23:59:59.000Z

435

Pulse-dilation enhanced gated optical imager with 5 ps resolution (invited)  

Science Conference Proceedings (OSTI)

A 5 ps gated framing camera was demonstrated using the pulse-dilation of a drifting electron signal. The pulse-dilation is achieved by accelerating a photoelectron derived information pulse with a time varying potential [R. D. Prosser, J. Phys. E 9, 57 (1976)]. The temporal dependence of the accelerating potential causes a birth time dependent axial velocity dispersion that spreads the pulse as it transits a drift region. The expanded pulse is then imaged with a conventional gated microchannel plate based framing camera and the effective gating time of the combined instrument is reduced over that of the framing camera alone. In the drift region, electron image defocusing in the transverse or image plane is prevented with a large axial magnetic field. Details of the unique issues associated with rf excited photocathodes were investigated numerically and a prototype instrument based on this principle was recently constructed. Temporal resolution of the instrument was measured with a frequency tripled femtosecond laser operating at 266 nm. The system demonstrated 20x temporal magnification and the results are presented here. X-ray image formation strategies and photometric calculations for inertial confinement fusion implosion experiments are also examined.

Hilsabeck, T. J.; Kilkenny, J. D. [General Atomics, P.O. Box 85608, San Diego, California 92186-5608 (United States); Hares, J. D.; Dymoke-Bradshaw, A. K. L. [Kentech Instruments Ltd., Wallingford, Oxfordshire OX10 (United Kingdom); Bell, P. M.; Koch, J. A.; Celliers, P. M.; Bradley, D. K.; McCarville, T.; Pivovaroff, M.; Soufli, R.; Bionta, R. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)

2010-10-15T23:59:59.000Z

436

Optimal control of quantum gates and suppression of decoherence in a system of interacting two-level particles  

E-Print Network (OSTI)

Methods of optimal control are applied to a model system of interacting two-level particles (e.g., spin-half atomic nuclei or electrons or two-level atoms) to produce high-fidelity quantum gates while simultaneously negating the detrimental effect of decoherence. One set of particles functions as the quantum information processor, whose evolution is controlled by a time-dependent external field. The other particles are not directly controlled and serve as an effective environment, coupling to which is the source of decoherence. The control objective is to generate target one- and two-qubit unitary gates in the presence of strong environmentally-induced decoherence and under physically motivated restrictions on the control field. The quantum-gate fidelity, expressed in terms of a novel state-independent distance measure, is maximized with respect to the control field using combined genetic and gradient algorithms. The resulting high-fidelity gates demonstrate the feasibility of precisely guiding the quantum evolution via optimal control, even when the system complexity is exacerbated by environmental coupling. It is found that the gate duration has an important effect on the control mechanism and resulting fidelity. An analysis of the sensitivity of the gate performance to random variations in the system parameters reveals a significant degree of robustness attained by the optimal control solutions.

Matthew Grace; Constantin Brif; Herschel Rabitz; Ian A. Walmsley; Robert L. Kosut; Daniel A. Lidar

2007-02-14T23:59:59.000Z

437

Controlled CO preferential oxidation  

DOE Patents (OSTI)

Method is described for controlling the supply of air to a PROX (PReferential OXidation for CO cleanup) reactor for the preferential oxidation in the presence of hydrogen wherein the concentration of the hydrogen entering and exiting the PROX reactor is monitored, the difference there between correlated to the amount of air needed to minimize such difference, and based thereon the air supply to the PROX reactor adjusted to provide such amount and minimize such difference. 2 figs.

Meltser, M.A.; Hoch, M.M.

1997-06-10T23:59:59.000Z

438

Metal atom oxidation laser  

DOE Patents (OSTI)

A chemical laser which operates by formation of metal or carbon atoms and reaction of such atoms with a gaseous oxidizer in an optical resonant cavity is described. The lasing species are diatomic or polyatomic in nature and are readily produced by exchange or other abstraction reactions between the metal or carbon atoms and the oxidizer. The lasing molecules may be metal or carbon monohalides or monoxides. (auth)

Jensen, R.J.; Rice, W.W.; Beattie, W.H.

1975-10-28T23:59:59.000Z

439

Metal atom oxidation laser  

DOE Patents (OSTI)

A chemical laser which operates by formation of metal or carbon atoms and reaction of such atoms with a gaseous oxidizer in an optical resonant cavity is described. The lasing species are diatomic or polyatomic in nature and are readily produced by exchange or other abstraction reactions between the metal or carbon atoms and the oxidizer. The lasing molecules may be metal or carbon monohalides or monoxides.

Jensen, R.J.; Rice, W.W.; Beattie, W.H.

1975-10-28T23:59:59.000Z

440

ADVANCED OXIDATION PROCESS  

DOE Green Energy (OSTI)

The removal of recalcitrant sulfur species, dibenzothiophene and its derivatives, from automotive fuels is an integral component in the development of cleaner burning and more efficient automobile engines. Oxidative desulfurization (ODS) wherein the dibenzothiophene derivative is converted to its corresponding sulfoxide and sulfone is an attractive approach to sulfur removal because the oxidized species are easily extracted or precipitated and filtered from the hydrocarbon phase. Fe-TAML{reg_sign} activators of hydrogen peroxide (TAML is Tetra-Amido-Macrocyclic-Ligand) catalytically convert dibenzothiophene and its derivatives rapidly and effectively at moderate temperatures (50-60 C) and ambient pressure to the corresponding sulfoxides and sulfones. The oxidation process can be performed in both aqueous systems containing alcohols such as methanol, ethanol, or t-butanol, and in a two-phase hydrocarbon/aqueous system containing tert-butanol or acetonitrile. In the biphasic system, essentially complete conversion of the DBT to its oxidized products can be achieved using slightly longer reaction times than in homogeneous solution. Among the key features of the technology are the mild reaction conditions, the very high selectivity where no over oxidation of the sulfur compounds occurs, the near stoichiometric use of hydrogen peroxide, the apparent lack of degradation of sensitive fuel components, and the ease of separation of oxidized products.

Dr. Colin P. Horwitz; Dr. Terrence J. Collins

2003-11-04T23:59:59.000Z

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441

Respiration Induced Heart Motion and Indications of Gated Delivery for Left-Sided Breast Irradiation  

SciTech Connect

Purpose: To investigate respiration-induced heart motion for left-sided breast irradiation using a four-dimensional computed tomography (4DCT) technique and to determine novel indications to assess heart motion and identify breast patients who may benefit from a gated treatment. Methods and Materials: Images of 4DCT acquired during free breathing for 20 left-sided breast cancer patients, who underwent whole breast irradiation with or without regional nodal irradiation, were analyzed retrospectively. Dose distributions were reconstructed in the phases of 0%, 20%, and 50%. The intrafractional heart displacement was measured in three selected transverse CT slices using D{sub LAD} (the distance from left ascending aorta to a fixed line [connecting middle point of sternum and the body] drawn on each slice) and maximum heart depth (MHD, the distance of the forefront of the heart to the line). Linear regression analysis was used to correlate these indices with mean heart dose and heart dose volume at different breathing phases. Results: Respiration-induced heart displacement resulted in observable variations in dose delivered to the heart. During a normal free-breathing cycle, heart-induced motion D{sub LAD} and MHD changed up to 9 and 11 mm respectively, resulting in up to 38% and 39% increases of mean doses and V{sub 25.2} for the heart. MHD and D{sub LAD} were positively correlated with mean heart dose and heart dose volume. Respiratory-adapted gated treatment may better spare heart and ipsilateral-lung compared with the conventional non-gated plan in a subset of patients with large D{sub LAD} or MHD variations. Conclusion: Proposed indices offer novel assessment of heart displacement based on 4DCT images. MHD and D{sub LAD} can be used independently or jointly as selection criteria for respiratory gating procedure before treatment planning. Patients with great intrafractional MHD variations or tumor(s) close to the diaphragm may particularly benefit from the gated treatment.

Qi, X. Sharon, E-mail: xiangrong.qi@ucdenver.edu [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Hu, Angela [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Wang Kai [Department of Radiation Oncology, Medical College of Wisconsin, Milwaukee, WI (United States); Newman, Francis [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Crosby, Marcus; Hu Bin; White, Julia; Li, X. Allen [Department of Radiation Oncology, Medical College of Wisconsin, Milwaukee, WI (United States)

2012-04-01T23:59:59.000Z

442

A real time status monitor for transistor bank driver power limit resistor in boost injection kicker power supply  

SciTech Connect

For years suffering of Booster Injection Kicker transistor bank driver regulator troubleshooting, a new real time monitor system has been developed. A simple and floating circuit has been designed and tested. This circuit monitor system can monitor the driver regulator power limit resistor status in real time and warn machine operator if the power limit resistor changes values. This paper will mainly introduce the power supply and the new designed monitoring system. This real time resistor monitor circuit shows a useful method to monitor some critical parts in the booster pulse power supply. After two years accelerator operation, it shows that this monitor works well. Previously, we spent a lot of time in booster machine trouble shooting. We will reinstall all 4 PCB into Euro Card Standard Chassis when the power supply system will be updated.

Mi, J.; Tan, Y.; Zhang, W.

2011-03-28T23:59:59.000Z

443

Characterization of solution processed, p-doped films using hole-only devices and organic field-effect transistors  

Science Conference Proceedings (OSTI)

We report a solution-processed approach for a p-type doped hole transport layer in organic light emitting devices (OLEDs). UV-vis-NIR absorption spectra identified the charge transfer between the donor and acceptor in the solution processed doped films. Single carrier device and field-effect transistor were utilized as test vehicles to study the charge transport property and extract important parameters such as bulk mobile carrier concentration and mobility. OLEDs with p-type doped hole transport layer showed significant improvement in power efficiency up to 30% at the optimal doping ratio. This approach has the great potential to reduce the power consumption for OLED solid state lighting while lowering the cost and boosting the throughput of its manufacturing.

Swensen, James S.; Wang, Liang (Frank); Rainbolt, James E.; Koech, Phillip K.; Polikarpov, Evgueni; Gaspar, Daniel J.; Padmaperuma, Asanga B.

2012-12-01T23:59:59.000Z

444

Origin of instability by positive bias stress in amorphous Si-In-Zn-O thin film transistor  

Science Conference Proceedings (OSTI)

The origin of instability under positive bias stress (PBS) in amorphous Si-In-Zn-O (SIZO) thin film transistor (TFT) with different Si concentration has been investigated by x-ray photoelectron spectroscopy (XPS) and density of states (DOSs) analysis. It is found that stability of SIZO-TFT with 3 wt. % Si under PBS became more deteriorated than that of 1 wt. % Si incorporated SIZO-TFT due to the increased oxygen related trap distributed in energy range from conduction band to {approx}0.3 eV below the conduction band. The origin of instability under PBS was discussed in terms of oxygen related trap derived from DOSs and XPS analysis.

Hyung Kim, Do [Department of Semiconductor Engineering, Cheongju University, Cheongju, Chungbuk 360-764 (Korea, Republic of); Department of Physics, University of Dongguk, Seoul 100-715 (Korea, Republic of); Youn Yoo, Dong [Future Convergence Research Division, Korea Institute of Science and Technology, Seoul 130-012 (Korea, Republic of); Kwang Jung, Hyun; Hwan Kim, Dae [School of Electrical Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Yeol Lee, Sang [Department of Semiconductor Engineering, Cheongju University, Cheongju, Chungbuk 360-764 (Korea, Republic of)

2011-10-24T23:59:59.000Z

445

Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation dose on dc characteristics and the reliability of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. The HEMTs were irradiated with protons at a fixed energy of 5 MeV and doses ranging from 109 to 2 1014 cm-2. For the dc characteristics, there was only minimal degradation of saturation drain current (IDSS), transconductance (gm), electron mobility and sheet carrier concentration at doses below 2 1013 cm-2, while the reduction of these parameters were 15%, 9%, 41% and 16.6%, respectively, at a dose of 2 1014 cm-2. At this same dose condition, increases of 37% in drain breakdown voltage (VBR) and of 45% in critical voltage (Vcri) were observed. The improvement of device reliability was attributed to the modification of the depletion region due to the introduction of a higher density of defects after irradiation at a higher dose.

Liu, L. [University of Florida, Gainesville; Cuervo, C.V. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

446

Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets  

Science Conference Proceedings (OSTI)

Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

Chu, Kuei-Yi [National Cheng-Kung University, Institute of Microelectronics, Department of Electrical Engineering (China); Chiang, Meng-Hsueh, E-mail: mhchiang@niu.edu.tw; Cheng, Shiou-Ying, E-mail: sycheng@niu.edu.tw [National II an University, Department of Electronic Engineering (China); Liu, Wen-Chau [National Cheng-Kung University, Institute of Microelectronics, Department of Electrical Engineering (China)

2012-02-15T23:59:59.000Z

447

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures  

Science Conference Proceedings (OSTI)

Double pulse doped ({delta}-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm{sup 2}/(V s) at sheet electron densities of 3.00 x 10{sup 12} and 3.36 x 10{sup 12} cm{sup -2}, respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A. [Russian Academy of Sciences, St. Petersburg Physics and Technology Center for Research and Education (Russian Federation)

2010-07-15T23:59:59.000Z

448

Patient radiation dose in prospectively gated axial CT coronary angiography and retrospectively gated helical technique with a 320-detector row CT scanner  

Science Conference Proceedings (OSTI)

Purpose: The aim of this study was to evaluate radiation dose to patients undergoing computed tomography coronary angiography (CTCA) for prospectively gated axial (PGA) technique and retrospectively gated helical (RGH) technique. Methods: Radiation doses were measured for a 320-detector row CT scanner (Toshiba Aquilion ONE) using small sized silicon-photodiode dosimeters, which were implanted at various tissue and organ positions within an anthropomorphic phantom for a standard Japanese adult male. Output signals from photodiode dosimeters were read out on a personal computer, from which organ and effective doses were computed according to guidelines published in the International Commission on Radiological Protection Publication 103. Results: Organs that received high doses were breast, followed by lung, esophagus, and liver. Breast doses obtained with PGA technique and a phase window width of 16% at a simulated heart rate of 60 beats per minute were 13 mGy compared to 53 mGy with RGH technique using electrocardiographically dependent dose modulation at the same phase window width as that in PGA technique. Effective doses obtained in this case were 4.7 and 20 mSv for the PGA and RGH techniques, respectively. Conversion factors of dose length product to the effective dose in PGA and RGH were 0.022 and 0.025 mSv mGy{sup -1} cm{sup -1} with a scan length of 140 mm. Conclusions: CTCA performed with PGA technique provided a substantial effective dose reduction, i.e., 70%-76%, compared to RGH technique using the dose modulation at the same phase windows as those in PGA technique. Though radiation doses in CTCA with RGH technique were the same level as, or some higher than, those in conventional coronary angiography (CCA), the use of PGA technique reduced organ and effective doses to levels less than CCA except for breast dose.

Seguchi, Shigenobu; Aoyama, Takahiko; Koyama, Shuji; Fujii, Keisuke; Yamauchi-Kawaura, Chiyo [Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan) and Department of Medical Technology, Nagoya Daini Red Cross Hospital, Myouken-chou, Showa-ku, Nagoya 466-8650 (Japan); Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan); Section of Radiological Protection, National Institute of Radiological Sciences, Anagawa, Inage-ku, Chiba 263-8555 (Japan); Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan)

2010-11-15T23:59:59.000Z

449

Methanol partial oxidation reformer  

DOE Patents (OSTI)

A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

Ahmed, S.; Kumar, R.; Krumpelt, M.

1999-08-24T23:59:59.000Z

450

Methanol partial oxidation reformer  

DOE Patents (OSTI)

A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

Ahmed, S.; Kumar, R.; Krumpelt, M.

1999-08-17T23:59:59.000Z

451

High-resolution core-level photoemission study of CF{sub 4}-treated Gd{sub 2}O{sub 3}(Ga{sub 2}O{sub 3}) gate dielectric on Ge probed by synchrotron radiation  

SciTech Connect

High-resolution core-level photoemission analysis using synchrotron radiation was used to investigate the superior electrical performance of aGa{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) gate dielectric on Ge(001) after CF{sub 4} treatment. Prior to the treatment, a thin germanate-like oxide layer that formed at the interface prevented Ge from diffusing to the surface. The Ge surface retained a small amount of buckled dimers from the as-grown sample. The buckled dimers were quickly removed by CF{sub 4} plasma treatment followed by an annealing process, resulting in a more uniform interface than that of the as-grown sample. The detailed interfacial electronic structure for the untreated and treated samples are presented.

Pi, T.-W. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China); Huang, M. L.; Kwo, J. [Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China); Department of Physics, National TsingHua University, Hsinchu 30013, Taiwan (China); Lee, W. C.; Chu, L. K.; Lin, T. D.; Chiang, T. H.; Wang, Y. C.; Wu, Y. D.; Hong, M. [Department of Materials Science and Engineering, National TsingHua University, Hsinchu 30013, Taiwan (China)

2011-02-07T23:59:59.000Z

452

Molecular water oxidation catalyst  

DOE Patents (OSTI)

A dimeric composition of the formula: ##STR1## wherein L', L", L'", and L"" are each a bidentate ligand having at least one functional substituent, the ligand selected from bipyridine, phenanthroline, 2-phenylpyridine, bipyrimidine, and bipyrazyl and the functional substituent selected from carboxylic acid, ester, amide, halogenide, anhydride, acyl ketone, alkyl ketone, acid chloride, sulfonic acid, phosphonic acid, and nitro and nitroso groups. An electrochemical oxidation process for the production of the above functionally substituted bidentate ligand diaqua oxo-bridged ruthenium dimers and their use as water oxidation catalysts is described.

Gratzel, Michael (St. Sulpice, CH); Munavalli, Shekhar (Bel Air, MD); Pern, Fu-Jann (Lakewood, CO); Frank, Arthur J. (Lakewood, CO)

1993-01-01T23:59:59.000Z

453

Tetraalykylammonium polyoxoanionic oxidation catalysts  

DOE Patents (OSTI)

Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H.sub.e-z (n-C.sub.4 H.sub.9).sub.4 N!.sub.z (XM.sub.11 M'O.sub.39).sup.-e The M' (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

Ellis, Paul E. (Downingtown, PA); Lyons, James E. (Wallingford, PA); Myers, Jr., Harry K. (Cochranville, PA); Shaikh, Shahid N. (Media, PA)

1998-01-01T23:59:59.000Z

454

Tetraalklylammonium polyoxoanionic oxidation catalysts  

DOE Patents (OSTI)

Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H{sub e{minus}z}[(n-C{sub 4}H{sub 9}){sub 4}N]{sub z}(XM{sub 11}M{prime}O{sub 39}){sup {minus}e}. The M{prime} (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

Ellis, P.E.; Lyons, J.E.; Myers, H.K. Jr.; Shaikh, S.N.

1998-10-06T23:59:59.000Z

455

The effective Hamiltonian of the Pound-Overhauser controlled-NOT gate, submitted for publication  

E-Print Network (OSTI)

Abstract. In NMR-based quantum computing, it is known that the controlled-NOT gate can be implemented by applying a low-power, monochromatic radiofrequency field to one peak of a doublet in a weakly-coupled two-spin system. This is known in NMR spectroscopy as Pound-Overhauser double resonance. The transition Hamiltonian that has been associated with this procedure is however only an approximation, which ignores off-resonance effects and does not correctly predict the associated phase factors. In this paper, the exact effective Hamiltonian for evolution of the spins state in a rotating frame is derived, both under irradiation of a single peak (on-transition) as well as between the peaks of the doublet (onresonance). The accuracy of these effective Hamiltonians is validated by comparing the observable product operator components of the density matrix obtained by simulation to those obtained by fitting the corresponding experiments. It is further shown that an on-resonance field yields a new implementation of the controlled-NOT gate up to phase factors, wherein the field converts the I A z state into the antiphase state 2IAx IBz, which is then converted into the desired two-spin order 2I A z IBz by a broadband ?/2 pulse selective for the A spin. In the on-transition case, it is explained that while a controlled-NOT gate is approximately obtained whenever the radio-frequency field power is low compared to the spin-spin coupling, at certain specific power levels an exact implementation is obtained up to phase factors. For both these implementations, the phase factors are derived exactly, enabling them to be corrected. In Appendices, the on-resonance Hamiltonian is analytically diagonalized, and proofs are given that, in the weak-coupling approximation, off-resonance effects can be neglected whenever the radio-frequency field power is small compared to the difference in resonance frequencies of the two spins.

David G Cory; Amy E Dunlop; Timothy F Havel; S Somaroo; Wurong Zhang

1999-01-01T23:59:59.000Z

456

Gain-offunction mutations reveal expanded intermediate states and a sequential action of two gates in  

E-Print Network (OSTI)

abstract The tension-driven gating transition in the large mechanosensitive channel MscL proceeds through detectable states of intermediate conductance. Gain-of-function (GOF) mutants with polar or charged substitutions in the main hydrophobic gate display altered patterns of subconducting states, providing valuable information about gating intermediates. Here we present thermodynamic analysis of several GOF mutants to clarify the nature and position of low-conducting conformations in the transition pathway. Unlike wild-type (WT) MscL, which predominantly occupies the closed and fully open states with very brief substates, the mild V23T GOF mutant frequently visits a multitude of short-lived subconducting states. Severe mutants V23D and G22N open in sequence: closed (C) ? low-conducting substate (S) ? open (O), with the first subtransition occurring at lower tensions. Analyses of equilibrium state occupancies as functions of membrane tension show that the C?S subtransition in WT MscL is associated with only a minor conductance increment, but the largest in-plane expansion and free energy change. The GOF substitutions strongly affect the first subtransition by reducing area (?A) and energy (?E) changes between C and S states commensurably with the severity of mutation. GOF mutants also exhibited a considerably larger ?E associated with the second (S?O) subtransition, but a ?A similar to WT. The area changes indicate that closed conformations of GOF mutants are physically preexpanded. The tension dependencies of rate constants for channel closure (k off) predict different positions of rate-limiting barriers on the energy-area profiles

Andriy Anishkin; Chien-sung Chiang; Sergei Sukharev

2005-01-01T23:59:59.000Z

457

Cloning and first functional characterization of a plant cyclic nucleotide-gated cation channel  

Science Conference Proceedings (OSTI)

Cyclic nucleotide-gated (cng) non-selective cation channels have been cloned from a number of animal systems. These channels are characterized by direct gating upon cAMO or cGMO binding to the intracellular portion of the channel protein, which leads to an increase in channel conductance. Animal cng channels are involved in signal transduction systems; they translate stimulus-induced changes in cytosolic cyclic nucleotide into altered cell membrane potential and/or cation flux as part of a signal cascade pathway. Putative plant homologs of animal cng channels have been identified. However, functional characterization (i.e., demonstration of cyclic-nucleotide-dependent ion currents) of a plant cng channel has not yet been accomplished. The authors report the cloning and first functional characterization of a plant member of this family of ion channels. The Arabidopsis cDNA AtCNGC2 encodes a polypeptide with deduced homology to the {alpha}-subunit of animal channels, and facilitates cyclic nucleotide-dependent cation currents upon expression in a number of heterologous systems. AtCNGC2 expression in a yeast mutant lacking a low-affinity K{sup +} uptake system complements growth inhibition only when lipophilic nucleotides are present in the culture medium. Voltage clamp analysis indicates that Xenopus lawvis oocytes injected with AtCNGC2 cRNA demonstrate cyclic-nucleotide-dependent, inward-rectifying K{sup +} currents. Human embryonic kidney cells (HEK293) transfected with AtCNGC2 cDNA demonstrate increased permeability to Ca{sup 2+} only in the presence of lipophilic cyclic nucleotides. The evidence presented here supports the functional classification of AtCNGC2 as a cyclic-nucleotide-gated cation channel, and presents the first direct evidence identifying a plant member of this ion channel family.

Leng, Q.; Mercier, R.W.; Yao, W.; Berkowitz, G.A.

1999-11-01T23:59:59.000Z

458

Biological Properties of Zinc Oxide-Coated Anodized Aluminum Oxide  

Science Conference Proceedings (OSTI)

We used agar diffusion assays to evaluate the activity of zinc oxide-coated ... Zirconia Stabilisation Nano-Confined by Using Electroless Nickel Cladding .... Metal Oxide Nanofibers Produced by a ForceSpinning Method for Battery Electrodes.

459

Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals  

SciTech Connect

The impact of iridium-oxide (IrO{sub x}) nano layer thickness on the tunneling oxide and memory performance of IrO{sub x} metal nanocrystals in an n-Si/SiO{sub 2}/Al{sub 2}O{sub 3}/IrO{sub x}/Al{sub 2}O{sub 3}/IrO{sub x} structure has been investigated. A thinner (1.5 nm) IrO{sub x} nano layer has shown better memory performance than that of a thicker one (2.5 nm). Core-shell IrO{sub x} nanocrystals with a small average diameter of 2.4 nm and a high density of {approx}2 x 10{sup 12}/cm{sup 2} have been observed by scanning transmission electron microscopy. The IrO{sub x} nanocrystals are confirmed by x-ray photoelectron spectroscopy. A large memory window of 3.0 V at a sweeping gate voltage of {+-}5 V and 7.2 V at a sweeping gate voltage of {+-} 8 V has been observed for the 1.5 nm-thick IrO{sub x} nano layer memory capacitors with a small equivalent oxide thickness of 8 nm. The electrons and holes are trapped in the core and annular regions of the IrO{sub x} nanocrystals, respectively, which is explained by Gibbs free energy. High electron and hole-trapping densities are found to be 1.5 x 10{sup 13}/cm{sup 2} and 2 x 10{sup 13}/cm{sup 2}, respectively, due to the small size and high-density of IrO{sub x} nanocrystals. Excellent program/erase endurance of >10{sup 6} cycles and good retention of 10{sup 4} s with a good memory window of >1.2 V under a small operation voltage of {+-} 5 V are obtained. A large memory size of >10 Tbit/sq. in. can be designed by using the IrO{sub x} nanocrystals. This study is not only important for the IrO{sub x} nanocrystal charge-trapping memory investigation but it will also help to design future metal nanocrystal flash memory.

Banerjee, W.; Maikap, S. [Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan 333, Taiwan (China); Tien, T.-C. [Material Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Taiwan (China); Li, W.-C.; Yang, J.-R. [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China)

2011-10-01T23:59:59.000Z

460

Demonstration of an optical quantum controlled-NOT gate without path interference  

E-Print Network (OSTI)

We report the first experimental demonstration of an optical quantum controlled-NOT gate without any path interference, where the two interacting path interferometers of the original proposals (Phys. Rev. A {\\bf 66}, 024308 (2001), Phys. Rev. A {\\bf 65}, 012314 (2002)) have been replaced by three partially polarizing beam splitters with suitable polarization dependent transmittances and reflectances. The performance of the device is evaluated using a recently proposed method (Phys. Rev. Lett. {\\bf 94}, 160504 (2005)), by which the quantum process fidelity and the entanglement capability can be estimated from the 32 measurement results of two classical truth tables, significantly less than the 256 measurement results required for full quantum tomography.

Okamoto, R; Takeuchi, S; Sasaki, K; Okamoto, Ryo; Hofmann, Holger F.; Takeuchi, Shigeki; Sasaki, Keiji

2005-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Demonstration of an optical quantum controlled-NOT gate without path interference  

E-Print Network (OSTI)

We report the first experimental demonstration of an optical quantum controlled-NOT gate without any path interference, where the two interacting path interferometers of the original proposals (Phys. Rev. A {\\bf 66}, 024308 (2001), Phys. Rev. A {\\bf 65}, 012314 (2002)) have been replaced by three partially polarizing beam splitters with suitable polarization dependent transmittances and reflectances. The performance of the device is evaluated using a recently proposed method (Phys. Rev. Lett. {\\bf 94}, 160504 (2005)), by which the quantum process fidelity and the entanglement capability can be estimated from the 32 measurement results of two classical truth tables, significantly less than the 256 measurement results required for full quantum tomography.

Ryo Okamoto; Holger F. Hofmann; Shigeki Takeuchi; Keiji Sasaki

2005-06-30T23:59:59.000Z

462

Design of a scanning gate microscope in a cryogen-free dilution refrigerator  

E-Print Network (OSTI)

We report on our design of a scanning gate microscope housed in a cryogen-free dilution refrigerator with a base temperature of 15 mK. The recent increase in efficiency of pulse tube cryocoolers has made cryogen-free systems popular in recent years. However, this new style of cryostat presents challenges for performing scanning probe measurements, mainly as a result of the vibrations introduced by the cryocooler. We demonstrate scanning with root-mean-square vibrations of 0.8 nm at 3 K and 2.1 nm at 15 mK in a 1 kHz bandwidth with our design.

Pelliccione, Matthew; Bartel, John; Keller, Andrew; Goldhaber-Gordon, David

2012-01-01T23:59:59.000Z

463

TheSingleElectronTransistorAsaRadioFrequencyMixer http://www.iquest. ucsb. edu/sites/cleland  

E-Print Network (OSTI)

preamp 0 15 30 0.5 1.0 (pA) 0 CGVS/e (RF) w S=20 MHz Isd CG VG /e n n+1 VDC VRF VRF RF/e) for sinusoidal Ids(VG). Confirmsandcalibrates RFgateaction J0(qRF/e) VRF(S) HomodyneDetection VS(w S) Vsd SET IsdQuantum-limitedMotionDetection I(q)ds CGVG/e n n+1 VDC VRF Gate Charge n-1 VLO VLO VRF (LO) (S) Time I(t)dsI()ds if = |LO-S| LO

Knobel, Robert

464

Hydrous oxide activated charcoal  

SciTech Connect

This patent describes a process for preparing of an ion exchanger, comprising: treating an ionically inert activated charcoal porous support with an aqueous solution of metal oxychloride selected from the group consisting of zirconium and titanium oxychlorides so as to impregnate the pores of the support with the solution; separating the treated support from excess metal oxychloride solution; converting the metal oxychloride to a hydrous metal oxide precipitate in the pores of the support at a pH above 8 and above the pH whereat the hydrous metal oxide and activated charcoal support have opposite zeta potentials and sufficient to hydrolyze the metal oxychloride. It also describes a process for preparing an ion exchanger comprising: treating granulated activated charcoal with a concentrated solution of a metal oxychloride from the group consisting of zirconium and titanium oxychlorides, degassing the mixture; and treating the resultant mixture with a base selected from the group consisting of ammonium hydroxide and alkali metal hydroxides so as to precipitate the oxychloride within the pores of the activated carbon granules as hydrous metal oxide at a pH above 8 and above the pH whereat the hydrous metal oxide and activated charcoal have opposite zeta potentials.

Weller, J.P.

1987-09-08T23:59:59.000Z

465

Doped zinc oxide microspheres  

DOE Patents (OSTI)

A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel. 4 figures.

Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

1993-12-14T23:59:59.000Z

466

Highly oxidized superconductors  

DOE Patents (OSTI)

Novel superconducting materials in the form of compounds, structures or phases are formed by performing otherwise known synthesis in a highly oxidizing atmosphere rather than that created by molecular oxygen at atmospheric pressure or below. This leads to the successful synthesis of novel superconducting compounds which are thermodynamically stable at the conditions under which they are formed. 16 figs.

Morris, D.E.

1994-09-20T23:59:59.000Z

467

Highly oxidized superconductors  

DOE Patents (OSTI)

Novel superconducting materials in the form of compounds, structures or phases are formed by performing otherwise known syntheses in a highly oxidizing atmosphere rather than that created by molecular oxygen at atmospheric pressure or below. This leads to the successful synthesis of novel superconducting compounds which are thermodynamically stable at the conditions under which they are formed.

Morris, Donald E. (Kensington, CA)

1994-01-01T23:59:59.000Z

468

As you prepare for your upcoming beam time, please be aware that construction is planned to update SLAC Gate 17 with RFID proximity card access hardware and to change the stairs next to the Security hut to an ADA compliant ramp. Please forward this to your proposal collaborators (and ensure that all users have registered and completed training before they arrive). This construction is scheduled to begin Tuesday 5/28 and be completed by 6/28. During this construction, access to the LCLS and SSRL buildings and experimental facilities will be provided as follows: VEHICLES ONLY THROUGH GATE 17 5/28-6/28 0600-1530 (6 am-3:30 pm) Construction Zone. Only VEHICLE traffic will be allowed access through Gate 17 and flagman will provide traffic control. 1530-1800 (3:30-6:00 pm) Assumes construction will have stopped for the day; both traffic lanes will be open for vehicles. 1800-0600 (6 pm-6 am) As now, Gate 17 will be closed or barricaded overnight. PEDESTRIANS ONLY THROUGH GATE 16 5/28-6/28 The pedestrian turnstile at Gate 16A will not change. The turnstile is available for pedestrian use 24/7 as long as the individual has a valid SLAC ID badge (and there is a guard at Gate 30 to 'buzz' them through). 0700-1600 (6 am-4 pm) Pedestrians who would normally walk through Gate 17 will instead follow the detour to Gate 16 swing gate which will be unlocked and staffed by Security. A valid SLAC ID badge is needed to enter; new users without IDs will be allowed to proceed for check-in and badging after confirmation with the User Research Administration Office (see detour map attached). FYI - After the construction is completed and proximity card readers are fully functional, users and staff will enter Gates 17 and 30 using an activated RFID proximity card. More details to follow.  

NLE Websites -- All DOE Office Websites (Extended Search)

Automated Proximity Access at Gate 17 and Sector 30 Automated Proximity Access at Gate 17 and Sector 30 New SLAC ID badges with embedded RFID are used to activate these gates and for off-hours access at the main entrance off Sand Hill Road as well as Alpine Road (gates will be accessible 24/7) . New user badges include this proximity gate activation feature, but older photo IDs need to be updated. Users are advised to register, complete training and contact the User Research Administration (URA) office before arrival for beam time to help facilitate access. During the transition period, July 26-August 9, 2013 users can inform Security at Gate 17 that they are checking in and proceed to the URA office in Building 120; however, after August 9 th , users without a proximity activated ID need to stop at

469

ADVANCED OXIDATION PROCESS  

DOE Green Energy (OSTI)

The design of new, high efficiency and cleaner burning engines is strongly coupled with the removal of recalcitrant sulfur species, dibenzothiophene and its derivatives, from fuels. Oxidative desulfurization (ODS) wherein these dibenzothiophene derivatives are oxidized to their corresponding sulfoxides and sulfones is an approach that has gained significant attention. Fe-TAML{reg_sign} activators of hydrogen peroxide (TAML is Tetra-Amido-Macrocyclic-Ligand) convert in a catalytic process dibenzothiophene and its derivatives to the corresponding sulfoxides and sulfones rapidly at moderate temperatures (60 C) and ambient pressure. The reaction can be performed in both an aqueous system containing an alcohol (methanol, ethanol, or t-butanol) to solubilize the DBT and in a two-phase hydrocarbon/aqueous system where the alcohol is present in both phases and facilitates the oxidation. Under a consistent set of conditions using the FeBF{sub 2} TAML activator, the degree of conversion was found to be t-butanol > methanol > ethanol. In the cases of methanol and ethanol, both the sulfoxide and sulfone were observed while for t-butanol only the sulfone was detected. In the two-phase system, the alcohol may function as an inverse phase transfer agent. The oxidation was carried out using two different TAML activators. In homogeneous solution, approximately 90% oxidation of the DBT could be achieved using the prototype TAML activator, FeB*, by sonicating the solution at near room temperature. In bi-phasic systems conversions as high as 50% were achieved using the FeB* TAML activator and hydrogen peroxide at 100 C. The sonication method yielded only {approx}6% conversion but this may have been due to mixing.

Colin P. Horwitz; Terrence J. Collins

2003-10-22T23:59:59.000Z

470

Electric-Field Modulation of Curie Temperature in (Ga, Mn)As Field-Effect Transistor Structures with Varying Channel Thickness and Mn Compositions  

SciTech Connect

We have investigated the change of T{sub C} of ferromagnetic semiconductor (Ga, Mn)As by changing hole concentration p. The field effect transistor structure was utilized to change p. The relation T{sub C}propor top{sup 0.2} is obtained for three samples, despite the difference of their Mn composition and thickness, indicating that the relation holds over 2 decades of p.

Nishitani, Y.; Endo, M. [Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan); Chiba, D. [Semiconductor Spintronics Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Sanban-cho 5, Chiyoda-ku, Tokyo 102-0075 (Japan); Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan); Matsukura, F.; Ohno, H. [Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan); Semiconductor Spintronics Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Sanban-cho 5, Chiyoda-ku, Tokyo 102-0075 (Japan)

2010-01-04T23:59:59.000Z

471

Lipid Oxidation Pathways, Volume 2  

Science Conference Proceedings (OSTI)

This book complements Lipid Oxidation Pathways, Volume 1. Lipid Oxidation Pathways, Volume 2 Health acid analysis aocs april articles chloropropanediol contaminants detergents dietary fats division divisions esters fats fatty food foods glycidol Health h

472

Oxygen sensitive, refractory oxide composition  

DOE Patents (OSTI)

Oxide compositions containing niobium pentoxide and an oxide selected from the group consisting of hafnia, titania, and zirconia have electrical conductivity characteristics which vary greatly depending on the oxygen content.

Holcombe, Jr., Cressie E. (Oak Ridge, TN); Smith, Douglas D. (Knoxville, TN)

1976-01-01T23:59:59.000Z

473

Cholesterol and Phytosterol Oxidation Products  

Science Conference Proceedings (OSTI)

This book comprehensively reviews several aspects of cholesterol oxidation products: cholesterol oxidation mechanisms, analytical determination, origin and content of these compounds in foods and biological samples, and their biological effects, with an em

474

Richard Gates  

Science Conference Proceedings (OSTI)

... NIST 1981 - 1987: Research Chemist, Tribochemistry Group, National Bureau of Standards 1978-1981: Chemist, Recycled Oil Program, National ...

2013-04-17T23:59:59.000Z

475

GATING CIRCUITS  

DOE Patents (OSTI)

Control circuits for vacuum tubes are described, and a binary counter having an improved trigger circuit is reported. The salient feature of the binary counter is the application of the input signal to the cathode of each of two vacuum tubes through separate capacitors and the connection of each cathode to ground through separate diodes. The control of the binary counter is achieved in this manner without special pulse shaping of the input signal. A further advantage of the circuit is the simplicity and minimum nuruber of components required, making its use particularly desirable in computer machines.

Merrill, L.C.

1958-10-14T23:59:59.000Z

476

Low temperature plasma enhanced chemical vapor deposition of silicon oxide films using disilane and nitrous oxide  

Science Conference Proceedings (OSTI)

Keywords: disilane, low temperature, nitrous oxide, plasma enhanced chemical vapor deposition, silicon oxide

Juho Song; G. S. Lee; P. K. Ajmera

1995-10-01T23:59:59.000Z

477

REVIEW OF PLUTONIUM OXIDATION LITERATURE  

Science Conference Proceedings (OSTI)

A brief review of plutonium oxidation literature was conducted. The purpose of the review was to ascertain the effect of oxidation conditions on oxide morphology to support the design and operation of the PDCF direct metal oxidation (DMO) furnace. The interest in the review was due to a new furnace design that resulted in oxide characteristics that are different than those of the original furnace. Very little of the published literature is directly relevant to the DMO furnace operation, which makes assimilation of the literature data with operating conditions and data a convoluted task. The oxidation behavior can be distilled into three regimes, a low temperature regime (RT to 350 C) with a relatively slow oxidation rate that is influenced by moisture, a moderate temperature regime (350-450 C) that is temperature dependent and relies on more or less conventional oxidation growth of a partially protective oxide scale, and high temperature oxidation (> 500 C) where the metal autocatalytically combusts and oxidizes. The particle sizes obtained from these three regimes vary with the finest being from the lowest temperature. It is surmised that the slow growth rate permits significant stress levels to be achieved that help break up the oxides. The intermediate temperatures result in a fairly compact scale that is partially protective and that grows to critical thickness prior to fracturing. The growth rate in this regime may be parabolic or paralinear, depending on the oxidation time and consequently the oxide thickness. The high temperature oxidation is invariant in quiescent or nearly quiescent conditions due to gas blanketing while it accelerates with temperature under flowing conditions. The oxide morphology will generally consist of fine particles ( 250 {micro}m). The particle size ratio is expected to be < 5%, 25%, and 70% for fine, medium and large particles, respectively, for metal temperatures in the 500-600 C range.

Korinko, P.

2009-11-12T23:59:59.000Z

478

REVIEW OF PLUTONIUM OXIDATION LITERATURE  

SciTech Connect

A brief review of plutonium oxidation literature was conducted. The purpose of the review was to ascertain the effect of oxidation conditions on oxide morphology to support the design and operation of the PDCF direct metal oxidation (DMO) furnace. The interest in the review was due to a new furnace design that resulted in oxide characteristics that are different than those of the original furnace. Very little of the published literature is directly relevant to the DMO furnace operation, which makes assimilation of the literature data with operating conditions and data a convoluted task. The oxidation behavior can be distilled into three regimes, a low temperature regime (RT to 350 C) with a relatively slow oxidation rate that is influenced by moisture, a moderate temperature regime (350-450 C) that is temperature dependent and relies on more or less conventional oxidation growth of a partially protective oxide scale, and high temperature oxidation (> 500 C) where the metal autocatalytically combusts and oxidizes. The particle sizes obtained from these three regimes vary with the finest being from the lowest temperature. It is surmised that the slow growth rate permits significant stress levels to be achieved that help break up the oxides. The intermediate temperatures result in a fairly compact scale that is partially protective and that grows to critical thickness prior to fracturing. The growth rate in this regime may be parabolic or paralinear, depending on the oxidation time and consequently the oxide thickness. The high temperature oxidation is invariant in quiescent or nearly quiescent conditions due to gas blanketing while it accelerates with temperature under flowing conditions. The oxide morphology will generally consist of fine particles (<15 {micro}m), moderately sized particles (15 < x < 250 {micro}m) and large particles (> 250 {micro}m). The particle size ratio is expected to be < 5%, 25%, and 70% for fine, medium and large particles, respectively, for metal temperatures in the 500-600 C range.

Korinko, P.

2009-11-12T23:59:59.000Z

479

Multifunctional Oxide - Programmaster.org  

Science Conference Proceedings (OSTI)

Toshihiko Tani, Toyota Motor Engineering and Manufacturing North America, Inc. Scope, Multifunctional oxide ceramics and thin films exhibit fascinating...

480

Interactions of cyclic nucleotidegated channel subunits and protein tyrosine kinase probed with genistein  

E-Print Network (OSTI)

abstract The cGMP sensitivity of cyclic nucleotidegated (CNG) channels can be modulated by changes in phosphorylation catalyzed by protein tyrosine kinases (PTKs) and protein tyrosine phosphatases. Previously, we used genistein, a PTK inhibitor, to probe the interaction between PTKs and homomeric channels comprised of ? subunits (RET?) of rod photoreceptor CNG channels expressed in Xenopus oocytes. We showed that in addition to inhibiting phosphorylation, genistein triggers a noncatalytic interaction between PTKs and homomeric RET? channels that allosterically inhibits channel gating. Here, we show that native CNG channels from rods, cones, and olfactory receptor neurons also exhibit noncatalytic inhibition induced by genistein, suggesting that in each of these sensory cells, CNG channels are part of a regulatory complex that contains PTKs. Native CNG channels are heteromers, containing ? as well as ? subunits. To determine the contributions of ? and ? subunits to genistein inhibition, we compared the effect of genistein on native, homomeric (RET ? and OLF?), and heteromeric (RET???, OLF???, and OLF??RET?) CNG channels. We found that genistein only inhibits channels that contain either the RET ? or the OLF ? subunits. This finding, along with other observations about the maximal effect of genistein and the Hill coefficient of genistein inhibition, suggests that the RET ? and OLF ? subunits contain binding sites for the PTK, whereas RET ? and OLF ? subunits do not. key words: cyclic guanosine monophosphate protein tyrosine kinase photoreceptor olfactory receptor neuron

Elena Molokanova; Alexei Savchenko; Richard H. Kramer

2000-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "transistor gate oxide" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Effect of gate-driven spin resonance on the conductance of a one-dimensional quantum wire  

E-Print Network (OSTI)

We consider quasiballistic electron transmission in a one-dimensional quantum wire subject to both time-independent and periodic potentials of a finger gate that results in a coordinate- and time-dependent Rashba-type spin-orbit coupling. A spin-dependent conductance is calculated as a function of external constant magnetic field, the electric field frequency, and the potential strength. The results demonstrate the effect of the gate-driven electric dipole spin resonance in a transport phenomenon such as spin-flip electron transmission.

Almas F. Sadreev; E. Ya. Sherman

2013-10-10T23:59:59.000Z

482

Tuning the Gate Opening Pressure of Metal Organic Frameworks (MOFs) for the Selective Separation of Hydro-carbons  

E-Print Network (OSTI)

Separation of hydrocarbons is one of the most energy demanding processes. The need to develop materials for the selective adsorption of hydrocarbons, under reasonable conditions, is therefore of paramount importance. This work unveils unexpected hydrocarbon selectivity in a flexible Metal Organic Framework (MOF), based on differences in their gate opening pressure. We show selectivity dependence on both chain length and specific framework-gas interaction. Combining Raman spectroscopy and theoretical van der Waals Density Functional (vdW-DF) calculations, the separation mechanisms governing this unexpected gate opening behavior are revealed.

Nijem, Nour; Canepa, Pieremanuele; Marti, Anne; Balkus,, Kenneth J; Thonhauser, T; Li, Jing; Chabal, Yves J; 10.1021/ja305754f

2012-01-01T23:59:59.000Z

483