National Library of Energy BETA

Sample records for tran si tion

  1. CUSSSFIC4TION CMUXLLq

    Office of Legacy Management (LM)

    CUSSSFIC4TION CMUXLLq RITE AUG 1 7 1962 Fcx the Atomic. Energy Commisaion~ Chief. Declaseifle@tlon Brar\qh F-mm A. B. Grsaingsr (Other ends tifmtioel) The die wae foutq3 to workvery satiafactorilywiti thlanew Qpeof incert, andncm,of tbepmvLouedsfeotaofeoo+tH&' iOitYwaslmd. D&e& ._: . . ..YG ~Kl.3. i>ro;rid3 -&I:: clcsuro on bct.k.mds of the .plece m & Die #l, is also to be tried outoo 4zgust22. Barr~l~or~~~Die~~hadalaobeenawlLfiedta' plwidesd~do~-

  2. CLASSIFICdTION CAWXL~ DAm

    Office of Legacy Management (LM)

    CLASSIFICdTION CAWXL~ DAm NAR 6 1969 For the Atomic EhergY hDh=+= ,' ROBERT L JACKSON /(\' t' for the Chief, Declassification B~Jx~

  3. Transformation of cis- and trans-2,3-dimethyloxiranes on a Pd/SiO{sub 2} catalyst

    SciTech Connect (OSTI)

    Fasi, A.; Notheisz, F.; Bartok, M.

    1997-04-01

    The transformation of cis- and trans-2,3-dimethyloxiranes on a Pd/SiO{sub 2} catalyst, leading to the formation of 2-butanone and 2-butanol, was studied in hydrogen and deuterium atmosphere. The effect of hydrogen and deuterium atmosphere. The effect of hydrogen pressure (1.3-100 kPa) and temperature (323-423 K) on the reaction rate was also measured. The transformation of the two stereoisomers involves different mechanisms. In the case of the cis-isomer, hydrogen participates in the cleavage of the C-O bond and different surface species belong to the two products. In the case of the trans-isomer, ring opening by hydrogen (the formation of 2-butanol) is less significant and the main reaction is intramolecular migration leading to the formation of 2-butanone. Considering the geometry of the adsorbed species, cis-2,3-dimethyloxirane is most probably adsorbed on the surface of the Pd catalyst in a planar manner, while the adsorption of the trans-isomer is intermediate between edgewise and planar adsorption model. 18 refs., 3 figs., 3 tabs.

  4. Tran_Presentation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    acid media into a deep eutectic solvent using bis(2-ethylhexyl) phosphate Presented by: Kate Tran, Eastern Kentucky University Merinda Volia, Department of Nuclear Engineering, Texas A&M University Dr. Evgeny Tereshatov, Cyclotron Institute, Texas A&M University Advisor: Dr. Charles Folden III, Cyclotron Institute, Texas A&M University Introduction * Chemical properties of superheavy elements (Z > 108) are relatively unknown, with exception of element 112 * Preliminary research

  5. Trans Tech Green Power | Open Energy Information

    Open Energy Info (EERE)

    Trans Tech Green Power Jump to: navigation, search Name: Trans Tech Green Power Place: India Sector: Biomass Product: Plans to develop biomass projects in Rajasthan. References:...

  6. WebTrans Update - August 31, 2015

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Notices Rates Standards of Conduct Tariff TF Web Based Training Notice: WebTrans Update Posted Date: 8312015 BPAT is deploying a minor change to Production webTrans in...

  7. WebTrans Update - September 9, 2015

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Notices Rates Standards of Conduct Tariff TF Web Based Training Notice: WebTrans Update Posted Date: 992015 BPAT is deploying a change to Production webTrans today...

  8. Trans India Acquisition Corporation | Open Energy Information

    Open Energy Info (EERE)

    India Acquisition Corporation Jump to: navigation, search Name: Trans-India Acquisition Corporation Place: Delaware Sector: Solar Product: Blank check company to be merged with...

  9. Hydrogen Transition (HyTRANS) Model

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    optimization of an objective function that reflects private costs and benefits. ... Platform, Requirements & Availability HyTRANS is a dynamic, non- linear optimization, ...

  10. TransWest Old | Open Energy Information

    Open Energy Info (EERE)

    Old Jump to: navigation, search NEPA Document Collection for: TransWest Old EIS NEPA name unknown General NEPA Document Info Environmental Analysis Type EIS Applicant Not Provided...

  11. IRAK4 Dimerization and Trans-Autophosphorylation Are Induced...

    Office of Scientific and Technical Information (OSTI)

    IRAK4 Dimerization and Trans-Autophosphorylation Are Induced by Myddosome Assembly Citation Details In-Document Search Title: IRAK4 Dimerization and Trans-Autophosphorylation Are ...

  12. EIS-0139: Trans-Alaska Gas System

    Broader source: Energy.gov [DOE]

    This EIS analyzes the Yukon Pacific Corporation's proposed construction of the Trans-Alaska Gas System (TAGS), a 796.5-mile long, 36-inch diameter pipeline to transport high-pressured natural gas between Prudhoe Bay and a tidewater terminal and liquefied natural gas plant near Anderson Bay, Alaska.

  13. New England Hydro-Trans Corp | Open Energy Information

    Open Energy Info (EERE)

    Hydro-Trans Corp Jump to: navigation, search Name: New England Hydro-Trans Corp Place: New Hampshire Phone Number: 1.800.661.3805 Website: www.transcanada.comindex.html Twitter:...

  14. New England Hydro-Tran Elec Co | Open Energy Information

    Open Energy Info (EERE)

    New England Hydro-Tran Elec Co Jump to: navigation, search Name: New England Hydro-Tran Elec Co Place: Massachusetts Phone Number: 860 729 9767 Website: www.nehydropower.com...

  15. Infrared absorption of trans-1-chloromethylallyl and trans-1-methylallyl radicals produced in photochemical reactions of trans-1,3-butadiene and C Script-Small-L {sub 2} in solid para-hydrogen

    SciTech Connect (OSTI)

    Bahou, Mohammed; Wu, Jen-Yu; Tanaka, Keiichi; Lee, Yuan-Pern

    2012-08-28

    The reactions of chlorine and hydrogen atoms with trans-1,3-butadiene in solid para-hydrogen (p-H{sub 2}) were investigated with infrared (IR) absorption spectra. When a p-H{sub 2} matrix containing C Script-Small-L {sub 2} and trans-1,3-butadiene was irradiated with ultraviolet light at 365 nm, intense lines at 650.3, 809.0, 962.2, 1240.6 cm{sup -1}, and several weaker ones due to the trans-1-chloromethylallyl radical, Bullet (CH{sub 2}CHCH)CH{sub 2}C Script-Small-L , appeared. Observed wavenumbers and relative intensities agree with the anharmonic vibrational wavenumbers and IR intensities predicted with the B3PW91/6-311++g(2d, 2p) method. That the C Script-Small-L atom adds primarily to the terminal carbon atom of trans-1,3-butadiene is in agreement with the path of minimum energy predicted theoretically, but in contrast to the reaction of C Script-Small-L + propene in solid p-H{sub 2}[J. Amicangelo and Y.-P. Lee, J. Phys. Chem. Lett. 1, 2956 (2010)] in which the addition of C Script-Small-L to the central C atom is favored, likely through steric effects in a p-H{sub 2} matrix. A second set of lines, intense at 781.6, 957.9, 1433.6, 2968.8, 3023.5, 3107.3 cm{sup -1}, were observed when the UV-irradiated C Script-Small-L {sub 2}/trans-1,3-butadiene/p-H{sub 2} matrix was further irradiated with IR light from a SiC source. These lines are assigned to the trans-1-methylallyl radical, Bullet (CH{sub 2}CHCH)CH{sub 3}, produced from reaction of 1,3-butadiene with a H atom resulted from the reaction of C Script-Small-L atoms with solid p-H{sub 2} exposed to IR radiation.

  16. EA-262 TransCanada Power Marketing Ltd | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    TransCanada Power Marketing Ltd EA-262 TransCanada Power Marketing Ltd Order authorizing TransCanada Power Marketing Ltd to export electric energy to Canada. EA-262 TransCanada ...

  17. The SpallaTion

    Office of Environmental Management (EM)

    The Science Behind Cheaper Biofuels The Science Behind Cheaper Biofuels August 15, 2011 - 11:50am Addthis Brookhaven National Laboratory is modeling the metabolic processes in rapeseed plants to optimize production of plant oils for biofuels. Shown above are developing embryos extracted from a growing rapeseed plant. The embryos accumulate seed oils which represent the most energy-dense form of biologically stored sunlight, and have great potential as renewable resources for fuel and industrial

  18. Microsoft Word - tran_abstract.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    using bis(2-ethylhexyl) phosphate K.A.Tran 1,2 , M.F. Volia 1,3 , E.E. Tereshatov 1 , and C.M. Folden 1 1 Cyclotron Institute, Texas A&M University, College Station, TX 77843 USA 2 Eastern Kentucky University, Richmond, KY 40475 USA 3 Department of Nuclear Engineering, Texas A&M University, College Station, TX 77843 USA The chemical properties of superheavy elements are relatively unknown due to their short half- lives and difficulty of production. In preparation for a future experiment

  19. Coway International TechTrans Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    company with experience in technology transfer in China, specialising in biotech, chemical, energy environment and CDM areas. References: Coway International TechTrans Co...

  20. Deseret Generation & Tran Coop (Colorado) | Open Energy Information

    Open Energy Info (EERE)

    Coop (Colorado) Jump to: navigation, search Name: Deseret Generation & Tran Coop Place: Colorado Website: www.deseretpower.com Outage Hotline: (801) 619-6500 References: EIA Form...

  1. EA-216-B TransAlta Energy Marketing (U.S) Inc | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    B TransAlta Energy Marketing (U.S) Inc EA-216-B TransAlta Energy Marketing (U.S) Inc Order authorizing TransAlta Energy Marketing (U.S) Inc to export electric energy to Canada. ...

  2. EA-262-B TransCanada Power Marketing Ltd | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    B TransCanada Power Marketing Ltd EA-262-B TransCanada Power Marketing Ltd Order authorizing TransCanada Power Marketing Ltd to export electric energy to Canada. EA-262-B ...

  3. EA-262-A TransCanada Power Marketing Ltd | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    A TransCanada Power Marketing Ltd EA-262-A TransCanada Power Marketing Ltd Order authorizing TransCanada Power Marketing Ltd to export electric energy to Canada. EA-262-A ...

  4. EA-216 TransAlta Energy Marketing (U.S) Inc | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    TransAlta Energy Marketing (U.S) Inc EA-216 TransAlta Energy Marketing (U.S) Inc Order authorizing TransAlta Energy Marketing (U.S) Inc to export electric energy to Canada. EA-216 ...

  5. EA-262-C TransCanada Power Marketing Ltd | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    C TransCanada Power Marketing Ltd EA-262-C TransCanada Power Marketing Ltd Order authorizing TransCanada Power Marketing Ltd to export electric energy to Canada. EA-262-C ...

  6. EA-216-C TransAlta Energy Marketing (U.S.)Inc. | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    -C TransAlta Energy Marketing (U.S.)Inc. EA-216-C TransAlta Energy Marketing (U.S.)Inc. Order authorizing TransAlta Energy Marketing (U.S.) Inc to export electric energy to Canada. ...

  7. TransCanada Power Mktg Ltd (Connecticut) | Open Energy Information

    Open Energy Info (EERE)

    Connecticut Phone Number: 1.800.661.3805 Website: www.transcanada.compowermarke Twitter: @TransCanada Outage Hotline: 1-800-447-8066 References: EIA Form EIA-861 Final Data...

  8. TransCanada Energy Marketing ULC | Open Energy Information

    Open Energy Info (EERE)

    Marketing ULC Jump to: navigation, search Name: TransCanada Energy Marketing ULC Place: California References: EIA Form EIA-861 Final Data File for 2010 - File1a1 EIA Form 861...

  9. VTA, SamTrans Look into Future with Bus Demo

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    induction motor for propulsion. Although there are several fuel cell chemistries and configura- tions, PEM is generally recog- nized as the best combination of electrochemistry, operating temperature, and weight for transportation applications. The fuel cell supplies electric current via an inverter to the propulsion motor, which is a proprietary design. This chassis- mounted, three-phase, induction motor is rated at 225 kW (369 horsepower). Hydrogen is stored onboard in eleven 5,000-psi

  10. Application to export electric energy OE docket No. EA-262-C TransCanada

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Power Marketing Ltd | Department of Energy docket No. EA-262-C TransCanada Power Marketing Ltd Application to export electric energy OE docket No. EA-262-C TransCanada Power Marketing Ltd Application from TransCanada Power Marketing Ltd to export electric energy to Canada. Application to export electric energy OE docket No. EA-262-C TransCanada Power Marketing Ltd (1.02 MB) More Documents & Publications EA-262-C TransCanada Power Marketing Ltd EA-262-A TransCanada Power Marketing Ltd

  11. EA-216-D TransAlta Energy Marketing (U.S.) Inc. | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    D TransAlta Energy Marketing (U.S.) Inc. EA-216-D TransAlta Energy Marketing (U.S.) Inc. Order from TEMUS to export electric energy to Canada. EA-216-D TEMUS CN.pdf (762.11 KB) More Documents & Publications Application to Export Electric Energy OE Docket No. EA-216-D TransAlta Energy Marketing (U.S.) Inc. EA-216-C TransAlta Energy Marketing (U.S.)Inc

  12. Application to Export Electric Energy OE Docket No. EA-216-D TransAlta

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Marketing (U.S.) Inc. | Department of Energy Export Electric Energy OE Docket No. EA-216-D TransAlta Energy Marketing (U.S.) Inc. Application to Export Electric Energy OE Docket No. EA-216-D TransAlta Energy Marketing (U.S.) Inc. Application from TEMUS to export electric energy to Canada. EA-216-D TransAlta Energy Mktg (CN).pdf (449.47 KB) More Documents & Publications EA-216-D TransAlta Energy Marketing (U.S.) Inc. EA-216-C TransAlta Energy Marketing (U.S.)Inc. Application to

  13. Trans ecuadorian pipeline; Mountainous pipeline restoration a logistical masterpiece

    SciTech Connect (OSTI)

    Hamilton, L. )

    1988-06-01

    The Trans Ecuadorian Pipeline pumped approximately 300,000 b/d of crude from fields in eastern Ecuador to an export terminal and refinery at Esmeraldas on the Pacific coast. The devastation resulting from an earthquake cut off the main portion of export income as well as domestic fuel supplies and propane gas. Approximately 25 km of the pipeline was destroyed. This article details how the pipeline was reconstructed, including both the construction of a temporary line and of permanent facilities.

  14. SiNode Systems

    Broader source: Energy.gov [DOE]

    SiNode Systems is a battery materials venture developing silicon-graphene anodes for the next generation of lithium-ion batteries. SiNode anodes offer higher battery capacity and faster charging rates, all while being produced via a low cost solution chemistry-based manufacturing process.

  15. Analyzing the Impacts of Policies and Technological Change Using HyTrans |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Analyzing the Impacts of Policies and Technological Change Using HyTrans Analyzing the Impacts of Policies and Technological Change Using HyTrans Presentation by ORNL's David Greene at the 2010 - 2025 Scenario Analysis for Hydrogen Fuel Cell Vehicles and Infrastructure Meeting on August 9 - 10, 2006 in Washington, D.C. greene_scenarios_hytrans.pdf (365.6 KB) More Documents & Publications Integrated Market Modeling of Hydrogen Transition Scenarios with HyTrans Cost

  16. Trans-Americas leads the way into municipal textile recycling

    SciTech Connect (OSTI)

    Ridgley, H.

    1998-08-01

    Most textile waste in the US still goes to the landfill--an estimated 6.6 million tons each year. But thanks to the efforts of textile recycles--such as Trans-Americas Textile Recycling CO. (Brooklyn, NY)--another 1.25 million tons gets salvaged for reuse overseas or as a feedstock for the wiping and fiber industries, according to the Council for Textile Recycling. In an era where global population levels are increasing the demand for textile waste from the Western world and municipalities are struggling to reach their waste diversion goals, boosting textile recovery rates makes sense. And it`s a waste that can be easily incorporated into existing municipal curbside or drop-off recycling programs. Since 1942, when the company first opened its doors in Brooklyn, NY, it purchased textile discards from charities. While those discards still make up the majority of Trans-Americas` supply, in the last two years, the company also began purchasing post-consumer material from municipalities. Textiles are definitely going to be an increasingly important part of recycling, as states look to meet their mandates.

  17. The benzene metabolite trans,trans-muconaldehyde blocks gap junction intercellular communication by cross-linking connexin43

    SciTech Connect (OSTI)

    Rivedal, Edgar Leithe, Edward

    2008-11-01

    Benzene is used at large volumes in many different human activities. Hematotoxicity and cancer-causation as a result of benzene exposure was recognized many years ago, but the mechanisms involved remain unclear. Aberrant regulation of gap junction intercellular communication (GJIC) has been linked to both cancer induction and interference with normal hematopoietic development. We have previously suggested that inhibition of GJIC may play a role in benzene toxicity since benzene metabolites were found to block GJIC, the ring-opened trans,trans-muconaldehyde (MUC) being the most potent metabolite. In the present work we have studied the molecular mechanisms underlying the MUC-induced inhibition of gap junctional communication. We show that MUC induces cross-linking of the gap junction protein connexin43 and that this is likely to be responsible for the induced inhibition of GJIC, as well as the loss of connexin43 observed in Western blots. We also show that glutaraldehyde possesses similar effects as MUC, and we compare the effects to that of formaldehyde. The fact that glutaraldehyde and formaldehyde have been associated with induction of leukemia as well as disturbance of hematopoiesis, strengthens the possible link between the effect of MUC on gap junctions, and the toxic effects of benzene.

  18. Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates

    SciTech Connect (OSTI)

    Drozdov, Yu. N. Drozdov, M. N.; Yunin, P. A.; Yurasov, D. V.; Shaleev, M. A.; Novikov, A. V.

    2015-01-15

    It is demonstrated using X-ray diffraction and atomic force microscopy that elastic stresses in GeSi layers on Si (115) substrates relax more effectively than in the same layers on Si (001) substrates. This fact is attributed to the predominant contribution of one of the (111) slip planes on the (115) cut. The atomicforce-microscopy image of the GeSi/Si(115) surface reveals unidirectional slip planes, while the GeSi/Si(001) image contains a grid of orthogonal lines and defects at the points of their intersection. As a result, thick GeSi layers on Si (115) have a reduced surface roughness. A technique for calculating the parameters of relaxation of the layer on the Si (115) substrate using X-ray diffraction data is discussed.

  19. Kinetics of trans-cis isomerization in azobenzene dimers at an air-water interface

    SciTech Connect (OSTI)

    Kumar, Bharat; Suresh, K. A.

    2009-08-15

    We have studied the kinetics of trans to cis isomerization under the illumination of ultraviolet light, in the Langmuir monolayer of mesogenic azobenzene dimer, bis-[5-(4{sup '}-n-dodecyloxy benzoyloxy)-2-(4{sup ''}-methylphenylazo)phenyl] adipate, at an air-water interface. We find that the trans to cis isomerization reaction of the molecules in the monolayer shows deviation from the first-order kinetics unlike those reported on Langmuir monolayers of azobenzene molecules. We attribute the deviation from first-order kinetics to the simultaneous photoisomerization of trans isomers to form cis isomers and the reverse thermal isomerization of cis isomers to form trans isomers. Our analysis of the rate of change of mole fraction of trans isomers to form cis isomers indicates a first-order kinetics for trans to cis photoisomerization reaction and a second-order kinetics for cis to trans thermal isomerization reaction. This second-order kinetics mechanism is similar to the Lindemann-Hinshelwood mechanism for the unimolecular reactions at low concentration of reactants. The formation of the activated cis isomer by collisions is a slow process as compared to the decay of the activated cis isomer to trans isomer in the liquid expanded phase. This results in the second-order kinetics for the thermal isomerization of cis isomers.

  20. Trans beta substituted chlorins and methods of making and using the same

    DOE Patents [OSTI]

    Lindsey, Jonathan S.; Balasubramanian, Thiagarajan

    2003-05-06

    Trans beta substituted chlorins and methods of making the same are disclosed, along with polymers formed from or containing such trans beta substituted chlorins as one or more monomeric units therein, light harvesting rods formed from such polymers, and electrodes carrying such polymers.

  1. A note on trans-Planckian tail effects

    SciTech Connect (OSTI)

    Graef, L.L.; Brandenberger, R.

    2015-09-09

    We study the proposal by Mersini et al. http://dx.doi.org/10.1103/PhysRevD.64.043508 that the observed dark energy might be explained by the back-reaction of the set of tail modes in a theory with a dispersion relation in which the mode frequency decays exponentially in the trans-Planckian regime. The matter tail modes are frozen out, however they induce metric fluctuations. The energy-momentum tensor with which the tail modes effect the background geometry obtains contributions from both metric and matter fluctuations. We calculate the equation of state induced by the tail modes taking into account the gravitational contribution. We find that, in contrast to the case of frozen super-Hubble cosmological fluctuations, in this case the matter perturbations dominate, and they yield an equation of state which to leading order takes the form of a positive cosmological constant.

  2. Trans-Atlantic Workshop on Rare Earth Elements and Other Critical Materials for a Clean Energy Future

    Office of Energy Efficiency and Renewable Energy (EERE)

    Trans-Atlantic Workshop on Rare Earth Elements and Other Critical Materials for a Clean Energy Future

  3. Application to export electric energy OE Docket No. EA-216-C TransAlta

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Marketing (U.S) Inc: Federal Register Notice Volume 76, No. 14 - Jan. 21, 2011 | Department of Energy export electric energy OE Docket No. EA-216-C TransAlta Energy Marketing (U.S) Inc: Federal Register Notice Volume 76, No. 14 - Jan. 21, 2011 Application to export electric energy OE Docket No. EA-216-C TransAlta Energy Marketing (U.S) Inc: Federal Register Notice Volume 76, No. 14 - Jan. 21, 2011 Application from TransAlta Energy Marketing (U.S) Inc to export electric energy to

  4. BPAT webTrans Update to CDE Shared Path Summary - October 9,...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Notices Rates Standards of Conduct Tariff TF Web Based Training Notice: BPAT webTrans Update to CDE Shared Path Summary Posted Date: 1092015 BPAT is deploying a change to...

  5. BPAT webTrans Update to CDE Shared Path Summary - November 5...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Notices Rates Standards of Conduct Tariff TF Web Based Training Notice: BPAT webTrans Update to CDE Shared Path Summary Posted Date: 1152015 BPAT is deploying a change to...

  6. TransCanada Power Mktg Ltd (New Hampshire) | Open Energy Information

    Open Energy Info (EERE)

    Place: New Hampshire Phone Number: 1.800.661.3805 Website: www.transcanada.comindex.html Twitter: @TransCanada Outage Hotline: 1-800-447-8066 References: EIA Form EIA-861 Final...

  7. Regulatory Interactions in ProKaryotes from RegTransBase

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Dubchak, Inna; Gelfand, Mikhail

    RegTransBase, a manually curated database of regulatory interactions in prokaryotes, captures the knowledge in published scientific literature using a controlled vocabulary. RegTransBase describes a large number of regulatory interactions reported in many organisms and contains various types of experimental data, in particular: the activation or repression of transcription by an identified direct regulator determining the transcriptional regulatory function of a protein (or RNA) directly binding to DNA or RNA mapping or prediction of binding sites for a regulatory protein characterization of regulatory mutations Currently, the RegTransBase content is derived from about 3000 relevant articles describing over 7000 experiments in relation to 128 microbes. It contains data on the regulation of about 7500 genes and evidence for 6500 interactions with 650 regulators. RegTransBase also contains manually created position weight matrices (PWM) that can be used to identify candidate regulatory sites in over 60 species. (Specialized Interface)

  8. Integrated Market Modeling of Hydrogen Transition Scenarios with HyTrans |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Integrated Market Modeling of Hydrogen Transition Scenarios with HyTrans Integrated Market Modeling of Hydrogen Transition Scenarios with HyTrans Presentation by Paul Leiby of Oak Ridge National Laboratory at the Joint Meeting on Hydrogen Delivery Modeling and Analysis, May 8-9, 2007 deliv_analysis_leiby.pdf (740.06 KB) More Documents & Publications DOE Hydrogen Transition Analysis Workshop Hydrogen Policy and Analyzing the Transition Hydrogen Transition Study

  9. Analyzing the Impacts of Policies and Technological Change Using HyTrans

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Scenarios for 2010 Scenarios for 2010 - - 2025 & Beyond: 2025 & Beyond: Analyzing the Impacts of Policies and Analyzing the Impacts of Policies and Technological Change Using Technological Change Using HyTrans HyTrans David L. Greene, ORNL David L. Greene, ORNL Paul N. Leiby, ORNL Paul N. Leiby, ORNL David Bowman, David Bowman, Econotech Econotech Elzbieta Tworek, Strata Elzbieta Tworek, Strata - - G G 2010 2010 - - 2025 Scenario Analysis Workshop 2025 Scenario Analysis Workshop August 9

  10. Application to Export Electric Energy OE Docket No. EA-216-C TransAlta

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Marketing (U.S) Inc . Canadian Electrical Association Comments | Department of Energy Export Electric Energy OE Docket No. EA-216-C TransAlta Energy Marketing (U.S) Inc . Canadian Electrical Association Comments Application to Export Electric Energy OE Docket No. EA-216-C TransAlta Energy Marketing (U.S) Inc . Canadian Electrical Association Comments Protest of the Canadian Electricity Association and the Electric Power Supply Association to Sierra Club's Notice of Intervention and

  11. Regulatory Interactions in ProKaryotes from RegTransBase

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Dubchak, Inna; Gelfand, Mikhail

    RegTransBase, a manually curated database of regulatory interactions in prokaryotes, captures the knowledge in published scientific literature using a controlled vocabulary. RegTransBase describes a large number of regulatory interactions reported in many organisms and contains various types of experimental data, in particular: the activation or repression of transcription by an identified direct regulator determining the transcriptional regulatory function of a protein (or RNA) directly binding to DNA or RNA mapping or prediction of binding sites for a regulatory protein characterization of regulatory mutations. RegTransBase also contains manually created position weight matrices (PWM) that can be used to identify candidate regulatory sites in over 60 species. (Specialized Interface)

  12. UTICA 4, NEW YORK COFIPOR~TION

    Office of Legacy Management (LM)

    H. J. Zmjian, GE", of the ncmbers of our orzaniza- has a "Q" cl:arance and our President is rcqueoting an 'L" clearance for some of us. -'n would appreciate it very much if you ...

  13. Application to Export Electric Energy OE Docket No. EA-216-D TransAlta

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Marketing (U.S.) Inc.: Federal Register Notice, Volume 81, No. 46 - March 9, 2016 | Department of Energy Export Electric Energy OE Docket No. EA-216-D TransAlta Energy Marketing (U.S.) Inc.: Federal Register Notice, Volume 81, No. 46 - March 9, 2016 Application to Export Electric Energy OE Docket No. EA-216-D TransAlta Energy Marketing (U.S.) Inc.: Federal Register Notice, Volume 81, No. 46 - March 9, 2016 Application from TEMUS to export electric energy to Canada. Federal Register

  14. Integrated Market Modeling of Hydrogen Transition Scenarios with HyTrans

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Integrated Market Modeling of Hydrogen Transition Scenarios with HyTrans Paul N. Leiby, David L. Greene and David Bowman Oak Ridge National Laboratory A presentation to the Hydrogen Delivery Analysis Meeting FreedomCAR and Fuels Partnership Delivery, Storage and Hydrogen Pathways Tech Teams May 8-9, 2007 Columbia, MD 2 OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY Drawing from several other DOE models, HyTrans integrates supply and demand in a dynamic non-linear market model to 2050.

  15. Si Brilliant Technology Ltd | Open Energy Information

    Open Energy Info (EERE)

    Si Brilliant Technology Ltd Jump to: navigation, search Name: Si-Brilliant Technology Ltd Place: Zhejiang Province, China Sector: Solar Product: Chinese solar-grade polysilicon...

  16. A=17Si (1993TI07)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Si (1993TI07) (Not observed) See (1983ANZQ, 1988WA18, 1992AV03).

  17. Mo-Si alloy development

    SciTech Connect (OSTI)

    Liu, C.T.; Heatherly, L.; Wright, J.L.

    1996-06-01

    The objective of this task is to develop new-generation corrosion-resistant Mo-Si intermetallic alloys as hot components in advanced fossil energy conversion and combustion systems. The initial effort is devoted to Mo{sub 5}-Si{sub 3}-base (MSB) alloys containing boron additions. Three MSB alloys based on Mo-10.5Si-1.1B (wt %), weighing 1500 g were prepared by hot pressing of elemental and alloy powders at temperatures to 1600{degrees}C in vacuum. Microporosities and glassy-phase (probably silicate phases) formations are identified as the major concerns for preparation of MSB alloys by powder metallurgy. Suggestions are made to alleviate the problems of material processing.

  18. TRANS4: a computer code calculation of solid fuel penetration of a concrete barrier. [LMFBR; GCFR

    SciTech Connect (OSTI)

    Ono, C. M.; Kumar, R.; Fink, J. K.

    1980-07-01

    The computer code, TRANS4, models the melting and penetration of a solid barrier by a solid disc of fuel following a core disruptive accident. This computer code has been used to model fuel debris penetration of basalt, limestone concrete, basaltic concrete, and magnetite concrete. Sensitivity studies were performed to assess the importance of various properties on the rate of penetration. Comparisons were made with results from the GROWS II code.

  19. EIS-0450: TransWest Express Transmission Project; Wyoming, Colorado, Utah, and Nevada

    Broader source: Energy.gov [DOE]

    This EIS, prepared jointly by DOE's Western Area Power Administration and the Department of the Interior's Bureau of Land Management (Wyoming State Office), evaluates the potential environmental impacts of granting a right-of-way for the TransWest Express Transmission Project and amending a land use plan. The project consists of an overhead transmission line that would extend approximately 725 miles from south-central Wyoming, through Colorado and Utah. Western proposes to be a joint owner of the project.

  20. Low Activation Joining of SiC/SiC Composites for Fusion Applications: Tape Casting TiC+Si Powders

    SciTech Connect (OSTI)

    Henager, Charles H.; Kurtz, Richard J.; Canfield, Nathan L.; Shin, Yongsoon; Luscher, Walter G.; Mansurov, Jirgal; Roosendaal, Timothy J.; Borlaug, Brennan A.

    2014-03-03

    This work discusses the latest developments in TiC + Si displacement reaction joining at PNNL based on new work to produce tape-cast powders for improved SiC-joints.

  1. Vehicle Technologies Office Merit Review 2014: Transportation Energy Transition Modeling and Analysis: the LAVE-Trans Model

    Broader source: Energy.gov [DOE]

    Presentation given by Oak Ridge National Laboratory at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about the LAVE-Trans...

  2. The HFIR 14J irradiation SiC/SiC composite and SiC fiber collaboration

    SciTech Connect (OSTI)

    Youngblood, G.E.; Jones, R.H.; Kohyama, Akira; Katoh, Yutai; Hasegawa, Akira; Snead, L.; Scholz, R.

    1998-09-01

    A short introduction with references establishes the current status of research and development of SiC{sub f}/SiC composites for fusion energy systems with respect to several key issues. The SiC fiber and composite specimen types selected for the JUPITER 14J irradiation experiment are presented together with the rationale for their selection.

  3. Centrotherm SiQ | Open Energy Information

    Open Energy Info (EERE)

    SiQ Jump to: navigation, search Name: Centrotherm SiQ Place: Germany Product: JV company by SolMic and Centrotherm to design and manufacture 'Siemens type' CVD reactors and STC-TCS...

  4. Effect of Si substrate on interfacial SiO{sub 2} scavenging in HfO{sub 2}/SiO{sub 2}/Si stacks

    SciTech Connect (OSTI)

    Li, Xiuyan, E-mail: xiuyan@adam.t.u-tokyo.ac.jp; Yajima, Takeaki; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2014-11-03

    The scavenging kinetics of an ultra-thin SiO{sub 2} interface layer (SiO{sub 2}-IL) in an HfO{sub 2}/SiO{sub 2}/Si stack is discussed by focusing on the substrate effect in addition to oxygen diffusion. {sup 18}O tracing experiments demonstrate that the O-atom moves from the SiO{sub 2}-IL to the HfO{sub 2} layer during scavenging. SiO{sub 2}-IL scavenging with various substrates (Si, SiC, and sapphire) has been found to be significantly different, which suggests that the Si in the substrate is also necessary to continuously cause the scavenging. Based on these findings and thermodynamic considerations, a kinetic model where oxygen vacancy (V{sub O}) transferred from the HfO{sub 2} reacts with the SiO{sub 2}, which is in contact with the Si-substrate, is proposed for the SiO{sub 2}-IL scavenging.

  5. Adequacy of the regulatory oversight of the Trans-Alaska pipeline and terminal

    SciTech Connect (OSTI)

    Not Available

    1990-03-01

    The Exxon Valdez spill abruptly brought to the nation's attention the risks of transporting crude oil. While oil tanker transportation received many of the headlines, the safety of pipelines carrying oil and the terminals that store it have also been called into question. GAO testified on the adequacy of regulatory oversight of the 800-mile Trans-Alaska Pipeline System and the terminal at Valdez, Alaska. This paper reports increased and coordinated regulatory oversight as a major component of an effective operational and emergency response strategy for the pipeline. The current lack of comprehensive and systematic oversight is of particular concern because of recent revelations of significant corrosion problems in the pipeline.

  6. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect (OSTI)

    Norris, D. J.; Qiu, Y.; Walther, T.; Dobbie, A.; Myronov, M.

    2014-01-07

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1−x}Ge{sub x} alloys for germanium concentrations x ≤ 0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28 < x ≤ 1 form islands after deposition of ∼3.0/x monolayers (=quarter unit cells in the diamond lattice, ML). The uncertainty in the amount of deposited material for pure Ge is ±(0.2–0.3) ML. Modelling shows that of the amount of germanium deposited, 0.7 ML segregate towards the free surface so that only ∼2.3/x ML are directly incorporated in the layer within a few nanometres, in good agreement with our measurements. For pure Ge (x = 1), this thickness is smaller than most values quoted in the literature, which we attribute to the high sensitivity of our method to fractional monolayer changes in the effective chemical width of such thin layers.

  7. si

    Office of Legacy Management (LM)

    ... per minute per 100 square centimeters EML EPA ESSAP ft3 FUSRAP GM ha kg km MeV ZI NBL NIST ORISE PMC ZnS Environmental Measurement Laboratories Environmental Protection ...

  8. Propagation of misfit dislocations from buffer/Si interface into Si

    DOE Patents [OSTI]

    Liliental-Weber, Zuzanna; Maltez, Rogerio Luis; Morkoc, Hadis; Xie, Jinqiao

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  9. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

    SciTech Connect (OSTI)

    Jiang, Xiaofan; Ma, Zhongyuan Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-09-28

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  10. Low Activation Joining of SiC/SiC Composites for Fusion Applications: Tape Casting TiC+Si Powders

    SciTech Connect (OSTI)

    Henager, Charles H.; Kurtz, Richard J.; Canfield, Nathan L.; Shin, Yongsoon; Luscher, Walter G.; Mansurov, Jirgal; Roosendaal, Timothy J.; Borlaug, Brennan A.

    2013-08-06

    The use of SiC composites in fusion environments likely requires joining of plates using reactive joining or brazing. One promising reactive joining method uses solid-state displacement reactions between Si and TiC to produce Ti3SiC2 + SiC. We continue to explore the processing envelope for this joint for the TITAN collaboration in order to produce optimal joints to undergo irradiation studies in HFIR. One noted feature of the joints produced using tape-calendared powders of TiC+Si has been the large void regions that have been apparently unavoidable. Although the produced joints are very strong, these voids are undesirable. In addition, the tapes that were made for this joining were produced about 20 years ago and were aging. Therefore, we embarked on an effort to produce some new tape cast powders of TiC and Si that could replace our aging tape calendared materials.

  11. HIGH-ENERGY NEUTRINO AND GAMMA-RAY TRANSIENTS FROM TRANS-RELATIVISTIC SUPERNOVA SHOCK BREAKOUTS

    SciTech Connect (OSTI)

    Kashiyama, Kazumi; Gao, Shan; Meszaros, Peter [Center for Particle and Gravitational Astrophysics, Department of Astronomy and Astrophysics, Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Murase, Kohta; Horiuchi, Shunsaku, E-mail: kzk15@psu.edu [CCAPP and Department of Physics, Ohio State University, 191 W. Woodruff Avenue, Columbus, OH 43210 (United States)

    2013-05-20

    Trans-relativistic shocks that accompany some supernovae (SNe) produce X-ray burst emissions as they break out in the dense circumstellar medium around the progenitors. This phenomenon is sometimes associated with peculiar low-luminosity gamma-ray bursts (LL GRBs). Here, we investigate the high-energy neutrino and gamma-ray counterparts of such a class of SNe. Just beyond the shock breakout radius, particle acceleration in the collisionless shock starts to operate in the presence of breakout photons. We show that protons may be accelerated to sufficiently high energies and produce high-energy neutrinos and gamma rays via the photomeson interaction. These neutrinos and gamma rays may be detectable from {approx}< 10 Mpc away by IceCube/KM3Net as multi-TeV transients almost simultaneously with the X-ray breakout, and even from {approx}< 100 Mpc away with follow-up observations by the Cherenkov Telescope Array using a wide-field sky monitor like Swift as a trigger. A statistical technique using a stacking approach could also be possible for the detection, with the aid of the SN optical/infrared counterparts. Such multi-messenger observations offer the possibility to probe the transition of trans-relativistic shocks from radiation-mediated to collisionless ones, and would also constrain the mechanisms of particle acceleration and emission in LL GRBs.

  12. Chemical compatibility issues associated with use of SiC/SiC in advanced reactor concepts

    SciTech Connect (OSTI)

    Wilson, Dane F.

    2015-09-01

    Silicon carbide/silicon carbide (SiC/SiC) composites are of interest for components that will experience high radiation fields in the High Temperature Gas Cooled Reactor (HTGR), the Very High Temperature Reactor (VHTR), the Sodium Fast Reactor (SFR), or the Fluoride-cooled High-temperature Reactor (FHR). In all of the reactor systems considered, reactions of SiC/SiC composites with the constituents of the coolant determine suitability of materials of construction. The material of interest is nuclear grade SiC/SiC composites, which consist of a SiC matrix [high-purity, chemical vapor deposition (CVD) SiC or liquid phase-sintered SiC that is crystalline beta-phase SiC containing small amounts of alumina-yttria impurity], a pyrolytic carbon interphase, and somewhat impure yet crystalline beta-phase SiC fibers. The interphase and fiber components may or may not be exposed, at least initially, to the reactor coolant. The chemical compatibility of SiC/SiC composites in the three reactor environments is highly dependent on thermodynamic stability with the pure coolant, and on reactions with impurities present in the environment including any ingress of oxygen and moisture. In general, there is a dearth of information on the performance of SiC in these environments. While there is little to no excess Si present in the new SiC/SiC composites, the reaction of Si with O2 cannot be ignored, especially for the FHR, in which environment the product, SiO2, can be readily removed by the fluoride salt. In all systems, reaction of the carbon interphase layer with oxygen is possible especially under abnormal conditions such as loss of coolant (resulting in increased temperature), and air and/ or steam ingress. A global outline of an approach to resolving SiC/SiC chemical compatibility concerns with the environments of the three reactors is presented along with ideas to quickly determine the baseline compatibility performance of SiC/SiC.

  13. SiD Letter of Intent

    SciTech Connect (OSTI)

    Aihara, H.,; Burrows, P.,; Oreglia, M.,; Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; Zhang, Q.; Srivastava, A.; Butler, J.M.; Goldstein, Joel; Velthuis, J.; Radeka, V.; Zhu, R.-Y.; Lutz, P.; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; /CERN /Cornell U., LNS /Ewha Women's U., Seoul /Fermilab /Gent U. /Darmstadt, GSI /Imperial Coll., London /Barcelona, Inst. Microelectron. /KLTE-ATOMKI /Valencia U., IFIC /Cantabria Inst. of Phys. /Louis Pasteur U., Strasbourg I /Durham U., IPPP /Kansas State U. /Kyungpook Natl. U. /Annecy, LAPP /LLNL, Livermore /Louisiana Tech. U. /Paris U., VI-VII /Paris U., VI-VII /Munich, Max Planck Inst. /MIT, LNS /Chicago, CBC /Moscow State U. /Nanjing U. /Northern Illinois U. /Obninsk State Nucl. Eng. U. /Paris U., VI-VII /Strasbourg, IPHC /Prague, Inst. Phys. /Princeton U. /Purdue U. /Rutherford /SLAC /SUNY, Stony Brook /Barcelona U. /Bonn U. /UC, Davis /UC, Santa Cruz /Chicago U. /Colorado U. /Delhi U. /Hawaii U. /Helsinki U. /Indiana U. /Iowa U. /Massachusetts U., Amherst /Melbourne U. /Michigan U. /Minnesota U. /Mississippi U. /Montenegro U. /New Mexico U. /Notre Dame U. /Oregon U. /Oxford U. /Ramon Llull U., Barcelona /Rochester U. /Santiago de Compostela U., IGFAE /Hefei, CUST /Texas U., Arlington /Texas U., Dallas /Tokyo U. /Washington U., Seattle /Wisconsin U., Madison /Wayne State U. /Yale U. /Yonsei U.

    2012-04-11

    This document presents the current status of the Silicon Detector (SiD) effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R and D needed to provide the technical basis for an optimised SiD.

  14. Experimental estimation of oxidation-induced Si atoms emission on Si(001) surfaces

    SciTech Connect (OSTI)

    Ogawa, Shuichi Tang, Jiayi; Takakuwa, Yuji

    2015-08-15

    Kinetics of Si atoms emission during the oxidation of Si(001) surfaces have been investigated using reflection high energy electron diffraction combined with Auger electron spectroscopy. The area ratio of the 1 × 2 and the 2 × 1 domains on a clean Si(001) surface changed with the oxidation of the surface by Langmuir-type adsorption. This change in the domain ratio is attributed to the emission of Si atoms. We can describe the changes in the domain ratio using the Si emission kinetics model, which states that (1) the emission rate is proportional to the oxide coverage, and (2) the emitted Si atoms migrate on the surface and are trapped at S{sub B} steps. Based on our model, we find experimentally that up to 0.4 ML of Si atoms are emitted during the oxidation of a Si(001) surface at 576 °C.

  15. Structure of Si-capped Ge/SiC/Si (001) epitaxial nanodots: Implications for quantum dot patterning

    SciTech Connect (OSTI)

    Petz, C. W.; Floro, J. A.; Yang, D.; Levy, J.

    2012-04-02

    Artificially ordered quantum dot (QD) arrays, where confined carriers can interact via direct exchange coupling, may create unique functionalities such as cluster qubits and spintronic bandgap systems. Development of such arrays for quantum computing requires fine control over QD size and spatial arrangement on the sub-35 nm length scale. We employ electron-beam irradiation to locally decompose ambient hydrocarbons onto a bare Si (001) surface. These carbonaceous patterns are annealed in ultra-high vacuum (UHV), forming ordered arrays of nanoscale SiC precipitates that have been suggested to template subsequent epitaxial Ge growth to form ordered QD arrays. We show that 3C-SiC nanodots form, in cube-on-cube epitaxial registry with the Si substrate. The SiC nanodots are fully relaxed by misfit dislocations and exhibit small lattice rotations with respect to the substrate. Ge overgrowth at elevated deposition temperatures, followed by Si capping, results in expulsion of the Ge from SiC template sites due to the large chemical and lattice mismatch between Ge and C. Maintaining an epitaxial, low-defectivity Si matrix around the quantum dots is important for creating reproducible electronic and spintronic coupling of states localized at the QDs.

  16. Modification of Mg{sub 2}Si in Mg–Si alloys with gadolinium

    SciTech Connect (OSTI)

    Ye, Lingying; Hu, Jilong Tang, Changping; Zhang, Xinming; Deng, Yunlai; Liu, Zhaoyang; Zhou, Zhile

    2013-05-15

    The modification effect of gadolinium (Gd) on Mg{sub 2}Si in the hypereutectic Mg–3 wt.% Si alloy has been investigated using optical microscope, scanning electron microscope, X-ray diffraction and hardness measurements. The results indicate that the morphology of the primary Mg{sub 2}Si is changed from coarse dendrite into fine polygon with the increasing Gd content. The average size of the primary Mg{sub 2}Si significantly decreases with increasing Gd content up to 1.0 wt.%, and then slowly increases. Interestingly, when the Gd content is increased to 4.0 and 8.0 wt.%, the primary and eutectic Mg{sub 2}Si evidently decrease and even disappear. The modification and refinement of the primary Mg{sub 2}Si is mainly attributed to the poisoning effect. The GdMg{sub 2} phase in the primary Mg{sub 2}Si is obviously coarsened as the Gd content exceeds 2.0 wt.%. While the decrease and disappearance of the primary and eutectic Mg{sub 2}Si are ascribed to the formation of vast GdSi compound. Therefore, it is reasonable to conclude that proper Gd (1.0 wt.%) addition can effectively modify and refine the primary Mg{sub 2}Si. - Highlights: ► Proper Gd (1.0 wt.%) addition can effectively modify and refine the primary Mg{sub 2}Si. ► We studied the reaction feasibility between Mg and Si, Gd and Si in Mg–Gd–Si system. ► We explored the modification mechanism of Gd modifier on Mg{sub 2}Si.

  17. Synthesis of 4-substituted-trans-1, 2-diaminocyclohexyl polyaminocarboxylate metal chelating agents for the preparation of stable radiometal antibody immunoconjugates for therapy and spect and pet imaging

    DOE Patents [OSTI]

    Mease, Ronnie C.; Mausner, Leonard F.; Srivastava, Suresh C.

    1994-01-01

    Cyclo agents useful in forming antibody-metal conjugates useful for diagnostic and therapeutic purposes. New compounds and processes of forming these compounds are disclosed including 4-haloacetamido-trans-1,2-diaminocyclohexyl polyaminocarboxylate and 4-isothiocyanato-trans-1,2-diamino cyclohexane-N,N,N',N'-tetra acetic acid.

  18. Synthesis of 4-substituted-trans-1, 2-diaminocyclohexyl polyaminocarboxylate metal chelating agents for the preparation of stable radiometal antibody immunoconjugates for therapy and SPECT and PET imaging

    DOE Patents [OSTI]

    Mease, R.C.; Mausner, L.F.; Srivastava, S.C.

    1994-03-08

    Cyclo agents are described which are useful in forming antibody-metal conjugates which are used for diagnostic and therapeutic purposes. New compounds and processes of forming these compounds are disclosed including 4-haloacetamido-trans-1,2diaminocyclohexyl polyaminocarboxylate and 4-isothiocyanato-trans-1,2diamino cyclohexane-N,N,N',N'-tetra acetic acid. No Drawings

  19. POTENTIAL EVIDENCE FOR THE ONSET OF ALFVÉNIC TURBULENCE IN TRANS-EQUATORIAL CORONAL LOOPS

    SciTech Connect (OSTI)

    De Moortel, I.; Threlfall, J.; McIntosh, S. W.; Bethge, C.; Liu, J. E-mail: mscott@ucar.edu

    2014-02-20

    This study investigates Coronal Multi-channel Polarimeter Doppler-shift observations of a large, off-limb, trans-equatorial loop system observed on 2012 April 10-11. Doppler-shift oscillations with a broad range of frequencies are found to propagate along the loop with a speed of about 500 km s{sup –1}. The power spectrum of perturbations travelling up from both loop footpoints is remarkably symmetric, probably due to the almost perfect north-south alignment of the loop system. Compared to the power spectrum at the footpoints of the loop, the Fourier power at the apex appears to be higher in the high-frequency part of the spectrum than expected from theoretical models. We suggest this excess high-frequency power could be tentative evidence for the onset of a cascade of the low-to-mid frequency waves into (Alfvénic) turbulence.

  20. Monolayer-induced band shifts at Si(100) and Si(111) surfaces

    SciTech Connect (OSTI)

    Mkinen, A. J. Kim, Chul-Soo; Kushto, G. P.

    2014-01-27

    We report our study of the interfacial electronic structure of Si(100) and Si(111) surfaces that have been chemically modified with various organic monolayers, including octadecene and two para-substituted benzene derivatives. X-ray photoelectron spectroscopy reveals an upward band shift, associated with the assembly of these organic monolayers on the Si substrates, that does not correlate with either the dipole moment or the electron withdrawing/donating character of the molecular moieties. This suggests that the nature and quality of the self-assembled monolayer and the intrinsic electronic structure of the semiconductor material define the interfacial electronic structure of the functionalized Si(100) and Si(111) surfaces.

  1. Isotropic plasma etching of Ge Si and SiNx films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Henry, Michael David; Douglas, Erica Ann

    2016-05-01

    This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiNx are described with etch rate reductions achieved by adjusting plasma chemistry with O2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiNx etch rates while retarding Ge etching.

  2. Inherent interface defects in thermal (211)Si/SiO{sub 2}:{sup 29}Si hyperfine interaction

    SciTech Connect (OSTI)

    Iacovo, Serena E-mail: andre.stesmans@fys.kuleuven.be; Stesmans, Andre E-mail: andre.stesmans@fys.kuleuven.be

    2014-10-21

    Low temperature electron spin resonance (ESR) studies were carried out on ‘higher index’ (211)Si/SiO{sub 2} interfaces thermally grown in the temperature range T{sub ox} = 400–1066°C. The data reveal the presence of two species of a P{sub b}-type interface defect, exhibiting a significant difference in defect density. On the basis of the pertinent ESR parameters and interface symmetry, the basic defect is typified as P{sub b0}{sup (211)}, close to the Pb0 center observed in standard (100)Si/SiO{sub 2}. The dominant type is found to pertain to defected Si atoms at (111)Si-face terraces with the dangling bond along the [111] direction at ∼19.5°C with the interface normal, these sites thus apparently predominantly accounting for interface mismatch adaptation. The total of the P{sub b}-type defect appearance clearly reflects the higher-index nature of the interface. It is found that T{sub ox} = 750°C is required to minimize the P{sub b0}{sup (211)} defect density through relaxation of the oxide (interface). Q-band ESR saturation spectroscopy reveals an anisotropic {sup 29}Si (nuclear spin I=1/2) hyperfine (hf) doublet associated with the central P{sub b0}{sup (211)} Zeeman signal, with hf parameters closest to those of the similar hf structure of the P{sub b0}{sup (110)} defect in thermal (110)Si/SiO{sub 2}, adducing independent support to the P{sub b0}{sup (211)} typification.

  3. Theoretical investigations of two Si-based spintronic materials...

    Office of Scientific and Technical Information (OSTI)

    Two Si-based spintronic materials, a Mn-Si digital ferromagnetic heterostructure (delta-layer of Mn doped in Si) with defects and dilutely doped Mnsub xSisub 1-x alloy are ...

  4. Theoretical investigations of two Si-based spintronic materials...

    Office of Scientific and Technical Information (OSTI)

    Title: Theoretical investigations of two Si-based spintronic materials Two Si-based spintronic materials, a Mn-Si digital ferromagnetic heterostructure (delta-layer of Mn doped ...

  5. Si(hhm) surfaces: Templates for developing nanostructures

    SciTech Connect (OSTI)

    Bozhko, S. I. Ionov, A. M.; Chaika, A. N.

    2015-06-15

    The fabrication of ordered low-dimensional structures on clean and metal-atom-decorated stepped Si(557) and Si(556) surfaces is discussed. The formation conditions and atomic structure of regular step systems on clean Si(557) 7 × 7 and Si(556) 7 × 7 surfaces are studied. The atomic structure of stepped Si(hhm), Ag/Si(557), and Gd/Si(557) surfaces is studied using high-resolution scanning tunneling microscopy and low-energy electron diffraction. The possibility of fabricating 1D and 2D structures of gadolinium and silver atoms on the Si(557) surface is demonstrated.

  6. Enhancement and Suppression of Photocurrent in Si Photodiodes...

    Office of Scientific and Technical Information (OSTI)

    Enhancement and Suppression of Photocurrent in Si Photodiodes by Nanoparticles and ... Title: Enhancement and Suppression of Photocurrent in Si Photodiodes by Nanoparticles and ...

  7. Sustainable Investments Capital SI Capital | Open Energy Information

    Open Energy Info (EERE)

    Investments Capital SI Capital Jump to: navigation, search Name: Sustainable Investments Capital (SI Capital) Place: Barcelona, Spain Zip: 8021 Sector: Renewable Energy, Services...

  8. SiXtron Advanced Materials | Open Energy Information

    Open Energy Info (EERE)

    Materials Jump to: navigation, search Name: SiXtron Advanced Materials Place: Quebec, Canada Website: www.sixtronadvancedmaterials.c References: SiXtron Advanced Materials1...

  9. Solute embrittlement of SiC

    SciTech Connect (OSTI)

    Enrique, Ral A., E-mail: enriquer@umich.edu [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48103 (United States); Van der Ven, Anton, E-mail: avdv@engineering.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2014-09-21

    The energies and stresses associated with the decohesion of ?-SiC in the presence of mobile Pd and Ag impurities are studied from first principles. Density functional theory calculations are parameterized with a generalized cohesive zone model and are analyzed within a thermodynamic framework that accounts for realistic boundary conditions in the presence of mobile impurities. We find that Pd impurities will embrittle SiC when Pd is in equilibrium with metallic Pd precipitates. Our thermodynamic analysis predicts that Pd embrittles SiC by substantially reducing the maximum stress of decohesion as a result of a phase transition between decohering planes involving an influx of Pd atoms. The methods presented in this work can be applied to study the thermodynamics of decohesion of SiC in other aggressive environments containing oxygen and water, for example, and yield environment dependent cohesive zone models for use in continuum approaches to study crack propagation and fracture.

  10. High-performance Si microwire photovoltaics

    SciTech Connect (OSTI)

    Kelzenberg, Michael D.; Turner-Evans, Daniel B.; Putnam, Morgan C.; Boettcher, Shannon W.; Briggs, Ryan M.; Baek, Jae Y.; Lewis, Nathan S.; Atwater, Harry A.

    2011-01-07

    Crystalline Si wires, grown by the vaporliquidsolid (VLS) process, have emerged as promising candidate materials for low-cost, thin-film photovoltaics. Here, we demonstrate VLS-grown Si microwires that have suitable electrical properties for high-performance photovoltaic applications, including long minority-carrier diffusion lengths (Ln>> 30 m) and low surface recombination velocities (S << 70 cms-1). Single-wire radial pn junction solar cells were fabricated with amorphous silicon and silicon nitride surface coatings, achieving up to 9.0% apparent photovoltaic efficiency, and exhibiting up to ~600 mV open-circuit voltage with over 80% fill factor. Projective single-wire measurements and optoelectronic simulations suggest that large-area Si wire-array solar cells have the potential to exceed 17% energy-conversion efficiency, offering a promising route toward cost-effective crystalline Si photovoltaics.

  11. Si Pro AS | Open Energy Information

    Open Energy Info (EERE)

    Pro AS Jump to: navigation, search Name: Si Pro AS Place: Glomfjord, Norway Zip: 8161 Product: Silicon recycler with facility in Singapore. Coordinates: 66.807991, 13.97315...

  12. Roll Casting of Al-25%Si

    SciTech Connect (OSTI)

    Haga, Toshio [Osaka Institute of Technology, Omiya Asahiku Osaka city 535-8585 (Japan); Harada, Hideto [Graduate School of Osaka Institute of Technology, Omiya Asahiku Osaka city 535-8585 (Japan); Watari, Hisaki [Gunma University, Kiryu city, 376-8515 (Japan)

    2011-05-04

    Strip casting of Al-25%Si strip was tried using an unequal diameter twin roll caster. The diameter of the lower roll (large roll) was 1000 mm and the diameter of the upper roll (small roll) was 250 mm. Roll material was mild steel. The sound strip could be cast at the speeds ranging from 8 m/min to 12 m/min. The strip did not stick to the roll without the parting material. The primary Si, which existed at centre area of the thickness direction, was larger than that which existed at other area. The size of the primary Si was smaller than 0.2 mm. Eutectic Si was smaller 5 {mu}m. The as-cast strip was ranging from 2 mm to 3 mm thick and its width was 100 mm. The as-cast strip could be hot rolled down to 1 mm. The hot rolled strip was cold rolled. The primary Si became smaller and the pore occurred around the primary Si after the rolling.

  13. Transparent conductor-Si pillars heterojunction photodetector

    SciTech Connect (OSTI)

    Yun, Ju-Hyung; Kim, Joondong; Park, Yun Chang

    2014-08-14

    We report a high-performing heterojunction photodetector by enhanced surface effects. Periodically, patterned Si substrates were used to enlarge the photo-reactive regions and yield proportionally improved photo-responses. An optically transparent indium-tin-oxide (ITO) was deposited on a Si substrate and spontaneously formed an ITO/Si heterojunction. Due to an electrical conductive ITO film, ITO/Si heterojunction device can be operated at zero-bias, which effectively suppresses the dark current, resulting in better performances than those by a positive or a negative bias operation. This zero-bias operating heterojunction device exhibits a short response time (? 22.5?ms) due to the physical reaction to the incident light. We revealed that the location of the space charge region (SCR) is crucial for a specific photon-wavelength response. The SCR space has the highest collection efficiency of the photo-generated carriers. The photo-response can be maximized when we design the photodetector by superposing the SCR space over a corresponding photon-absorption length. The surface enhanced Si pillar devices significantly improved the photo-responses ratios from that of a planar Si device. According to this design scheme, a high photo-response ratio of 5560% was achieved at a wavelength of 600?nm. This surfaced-enhanced heterojunction design scheme would be a promising approach for various photoelectric applications.

  14. Performance Comparison Study of SiC and Si Technology for an IPM Drive System

    SciTech Connect (OSTI)

    Chinthavali, Madhu Sudhan; Otaduy, Pedro J; Ozpineci, Burak

    2010-01-01

    The impact of the new SiC material based devices on a full system needs to be evaluated in order to assess the benefits of replacing Silicon (Si) devices with WBG devices. In this paper the results obtained with a full-system model simulated for an aggressive US06 drive cycle are presented. The system model includes a motor/generator model and inverter loss model developed using actual measured data. The results provide an insight to the difference in performance of a permanent magnet traction drive system using SiC versus Si devices.

  15. Characterization of SiGe/Si multi-quantum wells for infrared sensing

    SciTech Connect (OSTI)

    Moeen, M.; Salemi, A.; stling, M.; Radamson, H. H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640 Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)] [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

    2013-12-16

    SiGe epitaxial layers are integrated as an active part in thermal detectors. To improve their performance, deeper understanding of design parameters, such as thickness, well periodicity, quality, and strain amount, of the layers/interfaces is required. Oxygen (22500??10{sup ?9}?Torr) was exposed prior or during epitaxy of SiGe/Si multilayers. In this range, samples with 10?nTorr oxygen were processed to investigate layer quality and noise measurements. Temperature coefficient of resistance was also measured to evaluate the thermal response. These results demonstrate sensitivity of SiGe-based devices to size and location of defects in the structure.

  16. ZnO/porous-Si and TiO{sub 2}/porous-Si nanocomposite nanopillars

    SciTech Connect (OSTI)

    Wang, Dong, E-mail: dong.wang@tu-ilmenau.de; Yan, Yong; Schaaf, Peter [Chair Materials for Electronics, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies MacroNano, TU Ilmenau, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany); Sharp, Thomas [Oxford Instruments Plasma Technology Ltd., Yatton, Bristol BS49 4AP (United Kingdom); Schnherr, Sven; Ronning, Carsten [Institute for Solid State Physics, Friedrich Schiller University Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Ji, Ran [SUSS MicroTec Lithography GmbH, Schleissheimer Str. 90, 85748 Garching (Germany)

    2015-01-01

    Porous Si nanopillar arrays are used as templates for atomic layer deposition of ZnO and TiO{sub 2}, and thus, ZnO/porous-Si and TiO{sub 2}/porous-Si nanocomposite nanopillars are fabricated. The diffusion of the precursor molecules into the inside of the porous structure occurs via Knudsen diffusion and is strongly limited by the small pore size. The luminescence of the ZnO/porous-Si nanocomposite nanopillars is also investigated, and the optical emission can be changed and even quenched after a strong plasma treatment. Such nanocomposite nanopillars are interesting for photocatalysis and sensors.

  17. Application of the Hartmann-Tran profile to precise experimental data sets of C?H?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Forthomme, D.; Cich, M. J.; Twagirayezu, S.; Hall, G. E.; Sears, T. J.

    2015-06-25

    Self- and nitrogen-broadened line shape data for the Pe(11) line of the ?? + ?? band of acetylene, recorded using a frequency comb-stabilized laser spectrometer, have been analyzed using the HartmannTran profile (HTP) line shape model in a multispectrum fitting. In total, the data included measurements recorded at temperatures between 125 K and 296 K and at pressures between 4 and 760 Torr. New, sub-Doppler, frequency comb-referenced measurements of the positions of multiple underlying hot band lines have also been made. These underlying lines significantly affect the Pe(11) line profile at temperatures above 240 K and poorly known frequencies previouslymoreintroduced errors into the line shape analyses. The behavior of the HTP model was compared to the quadratic speed dependent Voigt profile (QSDVP) expressed in the frequency and time domains. A parameter uncertainty analysis was carried out using a Monte Carlo method based on the estimated pressure, transmittance and frequency measurement errors. From the analyses, the Pe(11) line strength was estimated to be 1.2014(50) 10-20 in cm.molecules? units at 296 K with the standard deviation in parenthesis. For analyzing these data, we found that a reduced form of the HTP, equivalent to the QSDVP, was most appropriate because the additional parameters included in the full HTP were not well determined. As a supplement to this work, expressions for analytic derivatives and a lineshape fitting code written in Matlab for the HTP are available.less

  18. Selective deposition of a crystalline Si film by a chemical sputtering...

    Office of Scientific and Technical Information (OSTI)

    Raman spectrum also suggested that Si relatedmore radicals (SiHsub 2, SiH, Si) with high reactivity contribute to the Si film formation. Simple model was derived as the ...

  19. UNITED STATES ATOMIC ENERGY COMMISSION SAC200063~~0oooo Frank K. Pittman, Director, /Division of Waste Management and Trans-

    Office of Legacy Management (LM)

    SAC200063~~0oooo .- Frank K. Pittman, Director, /Division of Waste Management and Trans- portation, Headquarters CONTAMIWATRD EE-AEC-OWNED OR IEASED FACILITIES This memorandum responds to your TWX dated October 30, 1973, requesting certain information on the above subject. Unfortunately, some of the documentation necessary to answer your queries is no Longer available due to the records disposal program or the agreements pre- vailing at the time of release or transfer of the facilities. From

  20. Synthesis of micro-sized interconnected Si-C composites

    DOE Patents [OSTI]

    Wang, Donghai; Yi, Ran; Dai, Fang

    2016-02-23

    Embodiments provide a method of producing micro-sized Si--C composites or doped Si--C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO.sub.x (0

  1. Application to Export Electric Energy OE Docket No. EA-216-C TransAlta Energy Marketing (U.S) Inc Sierra Club Withdrawal Motion

    Broader source: Energy.gov [DOE]

    Withdrawal of Sierra Club motion to intervene on the application to export electric energy OE Docket No. EA-216-C made by TransAlta Energy Marketing (U.S) Inc.

  2. Small-Angle Neutron Scattering Studies of a-Si:H and a-Si:D

    SciTech Connect (OSTI)

    Williamson, D. L.; Marr, D. W. M.; Nelson, B. P.; Iwaniczko, E.; Yang, J.; Yan, B.; Guha, S.

    2000-01-01

    The heterogeneity of hydrogen and deuterium on the nanometer scale has been probed by samll-angle neutron scattering (SANS) from a-Si:H and a-Si:D films. Films were depsoited by two techniques, plasma-enhanced chemical vapor deposition (PECVD) and hot-wire chemical vapor deposition (HWCVD) using conditions that yield high quality films and devices.

  3. Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique

    SciTech Connect (OSTI)

    Demiro?lu, D.; Tatar, B.; Kazmanli, K.; Urgen, M.

    2013-12-16

    Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height ?{sub B}, diode ideality factor ? were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity.

  4. Texture of CoSi2 Films on Si(111) (110) and (001) Substrates

    SciTech Connect (OSTI)

    K De Keyser; C Detavernier; J Jordan-Sweet; C Lavoie

    2011-12-31

    Synchrotron radiation was used to study the texture of polycrystalline CoSi{sub 2} films that were formed by a solid-state reaction between a 30 nm Co film and Si(111), (110) and (001) substrates. All films were strongly textured, and several texture components were identified. We discuss the simultaneous occurrence of axiotaxy (i.e. alignment of lattice planes across the interface) and several different types of epitaxy in each of the films. Comparison of the different texture components observed on the three substrate orientations suggests a strong preference for the alignment of CoSi{sub 2}{l_brace}110{r_brace} planes in the film with Si{l_brace}110{r_brace} planes in the substrate, and twinning around Si[111] directions.

  5. Operational Challenges in Gas-To-Liquid (GTL) Transportation Through Trans Alaska Pipeline System (TAPS)

    SciTech Connect (OSTI)

    Godwin A. Chukwu; Santanu Khataniar; Shirish Patil; Abhijit Dandekar

    2006-06-30

    Oil production from Alaskan North Slope oil fields has steadily declined. In the near future, ANS crude oil production will decline to such a level (200,000 to 400,000 bbl/day) that maintaining economic operation of the Trans-Alaska Pipeline System (TAPS) will require pumping alternative products through the system. Heavy oil deposits in the West Sak and Ugnu formations are a potential resource, although transporting these products involves addressing important sedimentation issues. One possibility is the use of Gas-to-Liquid (GTL) technology. Estimated recoverable gas reserves of 38 trillion cubic feet (TCF) on the North Slope of Alaska can be converted to liquid with GTL technology and combined with the heavy oils for a product suitable for pipeline transport. Issues that could affect transport of this such products through TAPS include pumpability of GTL and crude oil blends, cold restart of the pipeline following a prolonged winter shutdown, and solids deposition inside the pipeline. This study examined several key fluid properties of GTL, crude oil and four selected blends under TAPS operating conditions. Key measurements included Reid Vapor Pressure, density and viscosity, PVT properties, and solids deposition. Results showed that gel strength is not a significant factor for the ratios of GTL-crude oil blend mixtures (1:1; 1:2; 1:3; 1:4) tested under TAPS cold re-start conditions at temperatures above - 20 F, although Bingham fluid flow characteristics exhibited by the blends at low temperatures indicate high pumping power requirements following prolonged shutdown. Solids deposition is a major concern for all studied blends. For the commingled flow profile studied, decreased throughput can result in increased and more rapid solid deposition along the pipe wall, resulting in more frequent pigging of the pipeline or, if left unchecked, pipeline corrosion.

  6. GaP/Si heterojunction Solar Cells

    SciTech Connect (OSTI)

    Saive, R.; Chen, C.; Emmer, H.; Atwater, H.

    2015-05-11

    Improving the efficiency of solar cells requires the introduction of novel device concepts. Recent developments have shown that in Si solar cell technology there is still room for tremendous improvement. Using the heterojunction with intrinsic thin layer (HIT) approach 25.6 % power conversion efficiency was achieved. However, a-Si as a window and passivation layer comes with disadvantages as a-Si shows low conductivity and high parasitic absorption. Therefore, it is likely that using a crystalline material as window layer with high band gab and high mobility can further improve efficiency. We have studied GaP grown by MOCVD on Si with (001) and (112) orientation. We obtained crystalline layers with carrier mobility around 100 cm2/Vs and which passivate Si as confirmed by carrier lifetime measurements. We performed band alignment studies by X-ray photoelectron spectroscopy yielding a valence band offset of 0.3 eV. Comparing this value with the Schottky-model leads to an interface dipole of 0.59 eV. The open circuit voltage increases with increasing doping and is consistent with the theoretical open circuit voltage deduced from work function difference and interface dipole. We obtain an open circuit voltage of 0.38 V for n-doped GaP with doping levels in the order of 10^17 1/cm^3. In our next steps we will increase the doping level further in order to gain higher open circuit voltage. We will discuss the implications of these findings for GaP/Si heterojunction solar cells.

  7. Ag on Si(111) from basic science to application

    SciTech Connect (OSTI)

    Belianinov, Aleksey

    2012-04-04

    In our work we revisit Ag and Au adsorbates on Si(111)-7x7, as well as experiment with a ternary system of Pentacene, Ag and Si(111). Of particular interest to us is the Si(111)-({radical}3x{radical}3)R30{degree}Ag (Ag-Si-{radical}3 hereafter). In this thesis I systematically e plore effects of Ag deposition on the Ag-Si-{radical}3 at different temperatures, film thicknesses and deposition fluxes. The generated insight of the Ag system on the Si(111) is then applied to generate novel methods of nanostructuring and nanowire growth. I then extend our expertise to the Au system on the Ag-Si(111) to gain insight into Au-Si eutectic silicide formation. Finally we explore behavior and growth modes of an organic molecule on the Ag-Si interface.

  8. Comparison of the vacuum-ultraviolet radiation response of HfO{sub 2}/SiO{sub 2}/Si dielectric stacks with SiO{sub 2}/Si

    SciTech Connect (OSTI)

    Upadhyaya, G. S.; Shohet, J. L.

    2007-02-12

    Vacuum ultraviolet (vuv) emitted during plasma processing degrades dielectrics by generating electron-hole pairs. VUV-induced charging of SiO{sub 2}/p-Si and HfO{sub 2}/SiO{sub 2}/p-Si dielectric stacks are compared. For SiO{sub 2}/p-Si, charging is observed for photon energies >15 eV by ionization of dielectric atoms from photoinjected electrons. In HfO{sub 2}/SiO{sub 2}/p-Si, charging is observed for photon >10 eV and is due to ionization by photoinjected electrons and by H{sup +} trapping in the HfO{sub 2}/SiO{sub 2} bulk. Hydrogen appears during annealing at the Si-SiO{sub 2} interface forming Si-H, which, during irradiation, is depassivated by photoinjected electrons. The authors conclude that dielectric charging in thin oxides (<10 nm) occurs more easily in HfO{sub 2}/SiO{sub 2} than in SiO{sub 2}.

  9. Direct growth of graphene on Si(111)

    SciTech Connect (OSTI)

    Thanh Trung, Pham Joucken, Frdric; Colomer, Jean-Franois; Robert, Sporken; Campos-Delgado, Jessica; Raskin, Jean-Pierre; Hackens, Benot; Santos, Cristiane N.

    2014-06-14

    Due to the need of integrated circuit in the current silicon technology, the formation of graphene on Si wafer is highly desirable, but is still a challenge for the scientific community. In this context, we report the direct growth of graphene on Si(111) wafer under appropriate conditions using an electron beam evaporator. The structural quality of the material is investigated in detail by reflection high energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, high resolution scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. Our experimental results confirm that the quality of graphene is strongly dependent on the growth time during carbon atoms deposition.

  10. Unit cell of strained GeSi

    SciTech Connect (OSTI)

    Woicik, J.C.; Bouldin, C.E.; Miyano, K.E.; King, C.A.

    1997-06-01

    The local structure within the unit cell of strained-GeSi layers grown on Si(001) has been examined by polarization-dependent extended x-ray-absorption fine structure. First-neighbor bond lengths are found to deviate only slightly from their unstrained values; however, the distortion of the cubic-unit cell by strain leads to measurable polarization-dependent changes in first-shell coordination and second-shell distances. A unifying picture of bond lengths and elasticity in strained-layer semiconductors is presented. {copyright} {ital 1997} {ital The American Physical Society}

  11. Development of Readout Interconnections for the Si-W Calorimeter of SiD

    SciTech Connect (OSTI)

    Woods, M.; Fields, R.G.; Holbrook, B.; Lander, R.L.; Moskaleva, A.; Neher, C.; Pasner, J.; Tripathi, M.; Brau, J.E.; Frey, R.E.; Strom, D.; Breidenbach, M.; Freytag, D.; Haller, G.; Herbst, R.; Nelson, T.; Schier, S.; Schumm, B.; /UC, Santa Cruz

    2012-09-14

    The SiD collaboration is developing a Si-W sampling electromagnetic calorimeter, with anticipated application for the International Linear Collider. Assembling the modules for such a detector will involve special bonding technologies for the interconnections, especially for attaching a silicon detector wafer to a flex cable readout bus. We review the interconnect technologies involved, including oxidation removal processes, pad surface preparation, solder ball selection and placement, and bond quality assurance. Our results show that solder ball bonding is a promising technique for the Si-W ECAL, and unresolved issues are being addressed.

  12. Thermophysical and mechanical properties of SiC/SiC composites

    SciTech Connect (OSTI)

    Zinkle, S.J.; Snead, L.L.

    1998-09-01

    The key thermophysical and mechanical properties for SiC/SiC composites are summarized, including temperature-dependent tensile properties, elastic constants, thermal conductivity, thermal expansion, and specific heat. The effects of neutron irradiation on the thermal conductivity and dimensional stability (volumetric swelling, creep) of SiC is discussed. The estimated lower and upper temperatures limits for structural applications in high power density fusion applications are 400 and 1000 C due to thermal conductivity degradation and void swelling considerations, respectively. Further data are needed to more accurately determine these estimated temperature limits.

  13. Porous Si structure as moisture sensor

    SciTech Connect (OSTI)

    Peterson, D.W.; Nguyen, L.T.

    1996-12-31

    Development and characterization of a capacitive moisture sensor made from porous Si is presented. The sensor development was in support of the DoD funded Plastic Package Availability program and was intended for the detection of pinholes and defects in moisture barrier coatings applied to ICs during fabrication or during the plastic encapsulation assembly process.

  14. Current Status and Recent Research Achievements in SiC/SiC Composites

    SciTech Connect (OSTI)

    Katoh, Yutai; Snead, Lance L.; Henager, Charles H.; Nozawa, T.; Hinoki, Tetsuya; Ivekovic, Aljaz; Novak, Sasa; Gonzalez de Vicente, Sehila M.

    2014-12-01

    The development and maturation of the silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite system for fusion applications has seen the evolution from fundamental development and understanding of the material system and its behavior in a hostile irradiation environment to the current effort which essentially is a broad-based program of technology, directed at moving this material class from a laboratory curiosity to an engineering material. This paper lays out the recent international scientific and technological achievements in the development of SiC/SiC composite material technologies for fusion application and will discuss future research directions. It also reviews the materials system in the larger context of progress to maturity as an engineering material for both the larger nuclear community and for general engineering applications.

  15. Ni-Si Alloys for the S-I Reactor-Hydrogen Production Process Interface

    SciTech Connect (OSTI)

    Joseph W. Newkirk; Richard K. Brow

    2010-01-21

    The overall goal of this project was to develop Ni-Si alloys for use in vessels to contain hot, pressurized sulfuric acid. The application was to be in the decomposition loop of the thermochemical cycle for production of hydrogen.

  16. SANDIA COKPOK4TION SANDIA BASE, .QLDUQUERQUE. N. M.

    Office of Legacy Management (LM)

    F. k e r s , R. F. Beers, Inc. S. E . J e r m e , Univ. of Nev., Xeno %. L, B r m e , i h z e l t o n Nuclear Science Corp. 0. R. P l a c k , USPXS, Las Vegas, Nev. G. H. H i g ...

  17. Excited-state Raman spectroscopy with and without actinic excitation: S{sub 1} Raman spectra of trans-azobenzene

    SciTech Connect (OSTI)

    Dobryakov, A. L.; Quick, M.; Ioffe, I. N.; Granovsky, A. A.; Ernsting, N. P.; Kovalenko, S. A.

    2014-05-14

    We show that femtosecond stimulated Raman spectroscopy can record excited-state spectra in the absence of actinic excitation, if the Raman pump is in resonance with an electronic transition. The approach is illustrated by recording S{sub 1} and S{sub 0} spectra of trans-azobenzene in n-hexane. The S{sub 1} spectra were also measured conventionally, upon nπ* (S{sub 0} → S{sub 1}) actinic excitation. The results are discussed and compared to earlier reports.

  18. Silicon Genesis Corp SiGen | Open Energy Information

    Open Energy Info (EERE)

    Corp SiGen Jump to: navigation, search Name: Silicon Genesis Corp (SiGen) Place: San Jose, California Zip: 95134 Product: US-based manufacturer of proton-shooting wafer slicing...

  19. FRV SI Transport Solar LP | Open Energy Information

    Open Energy Info (EERE)

    SI Transport Solar LP Jump to: navigation, search Name: FRV SI Transport Solar LP Place: Arizona References: EIA Form EIA-861 Final Data File for 2010 - File220101 EIA Form 861...

  20. SiC Processing AG | Open Energy Information

    Open Energy Info (EERE)

    SiC Processing AG Jump to: navigation, search Name: SiC Processing AG Place: Hirschau, Germany Zip: 92242 Sector: Solar Product: Offers management and recycling of slurry for solar...

  1. SiG Solar GmbH | Open Energy Information

    Open Energy Info (EERE)

    SiG Solar GmbH Jump to: navigation, search Name: SiG Solar GmbH Place: Stuhr-Brinkum, Germany Zip: 28816 Sector: Solar Product: Supplier of mounting systems, and trade name in...

  2. SEGR in SiO$${}_2$$ –Si$_3$ N$_4$ Stacks

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Javanainen, Arto; Ferlet-Cavrois, Veronique; Bosser, Alexandre; Jaatinen, Jukka; Kettunen, Heikki; Muschitiello, Michele; Pintacuda, Francesco; Rossi, Mikko; Schwank, James R.; Shaneyfelt, Marty R.; et al

    2014-04-17

    This work presents experimental SEGR data for MOS-devices, where the gate dielectrics are are made of stacked SiO2–Si3N4 structures. Also a semi-empirical model for predicting the critical gate voltage in these structures under heavy-ion exposure is proposed. Then statistical interrelationship between SEGR cross-section data and simulated energy deposition probabilities in thin dielectric layers is discussed.

  3. SiN-SiC nanofilm: A nano-functional ceramic with bipolar magnetic semiconducting character

    SciTech Connect (OSTI)

    Zhang, Jiahui; Li, Xingxing; Yang, Jinlong

    2014-04-28

    Nowadays, functional ceramics have been largely explored for application in various fields. However, magnetic functional ceramics for spintronics remain little studied. Here, we propose a nano-functional ceramic of sphalerite SiN-SiC nanofilm with intrinsic ferromagnetic order. Based on first principles calculations, the SiN-SiC nanofilm is found to be a ferromagnetic semiconductor with an indirect band gap of 1.71 eV. By mean field theory, the Curie temperature is estimated to be 304 K, close to room temperature. Furthermore, the valence band and conduction band states of the nanofilm exhibit inverse spin-polarization around the Fermi level. Thus, the SiN-SiC nanofilm is a typical bipolar magnetic semiconductor in which completely spin-polarized currents with reversible spin polarization can be created and controlled by applying a gate voltage. Such a nano-functional ceramic provides a possible route for electrical manipulation of carrier's spin orientation.

  4. Nanocrystalline SiC formed by annealing of a-SiC:H on Si substrates: A study of dopant interdiffusion

    SciTech Connect (OSTI)

    Schnabel, Manuel; Weiss, Charlotte; Löper, Philipp; Janz, Stefan; Canino, Mariaconcetta; Summonte, Caterina; Wilshaw, Peter R.

    2014-07-14

    Nanocrystalline silicon carbide (nc-SiC) is an interesting material for electronics applications, both in its own right and as a host matrix for silicon quantum dots. When synthesized by annealing of a-SiC:H on Si substrates, interdiffusion of dopants occurs if either the a-SiC:H or the Si substrate is doped. Annealing a-SiC:H on highly boron-doped substrates at 1100 °C leads to a fairly homogeneous doping level of ≥4 × 10{sup 19} cm{sup −3} throughout the nc-SiC film. An unexpected anomaly in secondary ion mass spectroscopy quantification is observed and a method to circumvent it is shown. The nanostructure of the nc-SiC is only weakly affected as most of the diffusion occurs after the onset of crystallization. Annealing of doped a-SiC:H on Si substrates at 1100 °C leads to strong free carrier absorption at infrared wavelengths. This is demonstrated to originate from dopants that have diffused from the a-SiC:H to the Si substrate, and a method is developed to extract from it the doping profile in the Si substrate. The detection limit of this method is estimated to be ≤6 × 10{sup 13} cm{sup −2}. Doping levels of (0.5–3.5) × 10{sup 19} cm{sup −3} are induced at the Si substrate surface by both boron and phosphorus-doped a–SiC:H. When the Si substrate is doped opposite to the a-SiC:H p–n junctions are induced at a depth of 0.9–1.4 μm within the Si substrate for substrate resistivities of 1–10 Ω cm. Implications for different solar cell architectures are discussed. Dopant diffusion can be strongly reduced by lowering the annealing temperature to 1000 °C, albeit at the expense of reduced crystallinity.

  5. Characterization of SiO{sub 2}/SiN{sub x} gate insulators for graphene based nanoelectromechanical systems

    SciTech Connect (OSTI)

    Tvri, E.; Csontos, M., E-mail: csontos@dept.phy.bme.hu; Krivchy, T.; Csonka, S. [Department of Physics, Budapest University of Technology and Economics and Condensed Matter Research Group of the Hungarian Academy of Sciences, Budafoki t 8, H-1111 Budapest (Hungary); Frjes, P. [MEMS Lab, Institute for Technical Physics and Materials Science, RCNS, HAS, Konkoly-Thege t 29-33, H-1121 Budapest (Hungary)

    2014-09-22

    The structural and magnetotransport characterization of graphene nanodevices exfoliated onto Si/SiO{sub 2}/SiN{sub x} heterostructures are presented. Improved visibility of the deposited flakes is achieved by optimal tuning of the dielectric film thicknesses. The conductance of single layer graphene Hall-bar nanostructures utilizing SiO{sub 2}/SiN{sub x} gate dielectrics were characterized in the quantum Hall regime. Our results highlight that, while exhibiting better mechanical and chemical stability, the effect of non-stoichiometric SiN{sub x} on the charge carrier mobility of graphene is comparable to that of SiO{sub 2}, demonstrating the merits of SiN{sub x} as an ideal material platform for graphene based nanoelectromechanical applications.

  6. Method for enhancing growth of SiO.sub.2 in Si by the implantation of germanium

    DOE Patents [OSTI]

    Holland, Orin W.; Fathy, Dariush; White, Clark W.

    1990-04-24

    A method for enhancing the conversion of Si to SiO.sub.2 in a directional fashion wherein steam or wet oxidation of Si is enhanced by the prior implantation of Ge into the Si. The unique advantages of the Ge impurity include the directional enhancement of oxidation and the reduction in thermal budget, while at the same time, Ge is an electrically inactive impurity.

  7. Interfacing the Ab initio multiple spawning method with electronic structure methods in GAMESS: Photodecay of trans-Azomethane

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gaenko, Alexander; DeFusco, Albert; Varganov, Sergey A.; Martínez, Todd J.; Gordon, Mark S.

    2014-10-20

    This work presents a nonadiabatic molecular dynamics study of the nonradiative decay of photoexcited trans-azomethane, using the ab initio multiple spawning (AIMS) program that has been interfaced with the General Atomic and Molecular Electronic Structure System (GAMESS) quantum chemistry package for on-the-fly electronic structure evaluation. The interface strategy is discussed, and the capabilities of the combined programs are demonstrated with a nonadiabatic molecular dynamics study of the nonradiative decay of photoexcited trans-azomethane. Energies, gradients, and nonadiabatic coupling matrix elements were obtained with the state-averaged complete active space self-consistent field method, as implemented in GAMESS. The influence of initial vibrational excitationmore » on the outcome of the photoinduced isomerization is explored. Increased vibrational excitation in the CNNC torsional mode shortens the excited state lifetime. Depending on the degree of vibrational excitation, the excited state lifetime varies from ~60–200 fs. As a result, these short lifetimes are in agreement with time-resolved photoionization mass spectroscopy experiments.« less

  8. Si-based RF MEMS components.

    SciTech Connect (OSTI)

    Stevens, James E.; Nordquist, Christopher Daniel; Baker, Michael Sean; Fleming, James Grant; Stewart, Harold D.; Dyck, Christopher William

    2005-01-01

    Radio frequency microelectromechanical systems (RF MEMS) are an enabling technology for next-generation communications and radar systems in both military and commercial sectors. RF MEMS-based reconfigurable circuits outperform solid-state circuits in terms of insertion loss, linearity, and static power consumption and are advantageous in applications where high signal power and nanosecond switching speeds are not required. We have demonstrated a number of RF MEMS switches on high-resistivity silicon (high-R Si) that were fabricated by leveraging the volume manufacturing processes available in the Microelectronics Development Laboratory (MDL), a Class-1, radiation-hardened CMOS manufacturing facility. We describe novel tungsten and aluminum-based processes, and present results of switches developed in each of these processes. Series and shunt ohmic switches and shunt capacitive switches were successfully demonstrated. The implications of fabricating on high-R Si and suggested future directions for developing low-loss RF MEMS-based circuits are also discussed.

  9. Magnetoelasticity of Fe-Si single crystals

    SciTech Connect (OSTI)

    Xing, Q; Wu, D.; Lograsso, T. A.

    2010-04-20

    The tetragonal magnetostriction constant, (3/2){lambda}{sub 100}, of Fe-Si single crystals was measured and was found to be structure dependent. Similar to that of Fe-Ge single crystals, (3/2){lambda}{sub 100} is positive in the single phase A2 regime, becomes negative in the single phase D0{sub 3} regime, and changes from positive to negative between the two regimes. Short-range order in the A2 regime decreases the magnetostriction prior to the onset of long range order. In the single phase regions of both A2 and D0{sub 3}, thermal history does not show any obvious effect on the magnetostriction, contrary to that found for Fe-Ga alloys. However, in the regions of phase mixture involving A2, B2, and D0{sub 3} phases, quenching pushes the change in magnetostriction from positive to negative to higher Si contents.

  10. Thermodynamic and kinetic control of the lateral Si wire growth

    SciTech Connect (OSTI)

    Dedyulin, Sergey N. Goncharova, Lyudmila V.

    2014-03-24

    Reproducible lateral Si wire growth has been realized on the Si (100) surface. In this paper, we present experimental evidence showing the unique role that carbon plays in initiating lateral growth of Si wires on a Si (100) substrate. Once initiated in the presence of ?5 ML of C, lateral growth can be achieved in the range of temperatures, T?=?450650?C, and further controlled by the interplay of the flux of incoming Si atoms with the size and areal density of Au droplets. Critical thermodynamic and kinetic aspects of the growth are discussed in detail.

  11. Evaluate Si Layers: Cooperative Research and Development Final Report, CRADA Number CRD-07-255

    SciTech Connect (OSTI)

    Teplin, C.

    2013-04-01

    Evaluate Si layers based on heteroepitaxial Si growth on RABITS textured metal substrates coated with textured buffer layers.

  12. Initial assessment of environmental effects on SiC/SiC composites in helium-cooled nuclear systems

    SciTech Connect (OSTI)

    Contescu, Cristian I

    2013-09-01

    This report summarized the information available in the literature on the chemical reactivity of SiC/SiC composites and of their components in contact with the helium coolant used in HTGR, VHTR and GFR designs. In normal operation conditions, ultra-high purity helium will have chemically controlled impurities (water, oxygen, carbon dioxide, carbon monoxide, methane, hydrogen) that will create a slightly oxidizing gas environment. Little is known from direct experiments on the reactivity of third generation (nuclear grade) SiC/SiC composites in contact with low concentrations of water or oxygen in inert gas, at high temperature. However, there is ample information about the oxidation in dry and moist air of SiC/SiC composites at high temperatures. This information is reviewed first in the next chapters. The emphasis is places on the improvement in material oxidation, thermal, and mechanical properties during three stages of development of SiC fibers and at least two stages of development of the fiber/matrix interphase. The chemical stability of SiC/SiC composites in contact with oxygen or steam at temperatures that may develop in off-normal reactor conditions supports the conclusion that most advanced composites (also known as nuclear grade SiC/SiC composites) have the chemical resistance that would allow them maintain mechanical properties at temperatures up to 1200 1300 oC in the extreme conditions of an air or water ingress accident scenario. Further research is needed to assess the long-term stability of advanced SiC/SiC composites in inert gas (helium) in presence of very low concentrations (traces) of water and oxygen at the temperatures of normal operation of helium-cooled reactors. Another aspect that needs to be investigated is the effect of fast neutron irradiation on the oxidation stability of advanced SiC/SiC composites in normal operation conditions.

  13. Prediction of Thermal Conductivity for Irradiated SiC/SiC Composites by Informing Continuum Models with Molecular Dynamics Data

    SciTech Connect (OSTI)

    Nguyen, Ba Nghiep; Gao, Fei; Henager, Charles H.; Kurtz, Richard J.

    2014-05-01

    This article proposes a new method to estimate the thermal conductivity of SiC/SiC composites subjected to neutron irradiation. The modeling method bridges different scales from the atomic scale to the scale of a 2D SiC/SiC composite. First, it studies the irradiation-induced point defects in perfect crystalline SiC using molecular dynamics (MD) simulations to compute the defect thermal resistance as a function of vacancy concentration and irradiation dose. The concept of defect thermal resistance is explored explicitly in the MD data using vacancy concentrations and thermal conductivity decrements due to phonon scattering. Point defect-induced swelling for chemical vapor deposited (CVD) SiC as a function of irradiation dose is approximated by scaling the corresponding MD results for perfect crystal ?-SiC to experimental data for CVD-SiC at various temperatures. The computed thermal defect resistance, thermal conductivity as a function of grain size, and definition of defect thermal resistance are used to compute the thermal conductivities of CVD-SiC, isothermal chemical vapor infiltrated (ICVI) SiC and nearly-stoichiometric SiC fibers. The computed fiber and ICVI-SiC matrix thermal conductivities are then used as input for an Eshelby-Mori-Tanaka approach to compute the thermal conductivities of 2D SiC/SiC composites subjected to neutron irradiation within the same irradiation doses. Predicted thermal conductivities for an irradiated Tyranno-SA/ICVI-SiC composite are found to be comparable to available experimental data for a similar composite ICVI-processed with these fibers.

  14. Si etching with reactive neutral beams of very low energy

    SciTech Connect (OSTI)

    Hara, Yasuhiro; Hamagaki, Manabu; Mise, Takaya; Iwata, Naotaka; Hara, Tamio

    2014-12-14

    A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF{sub 4} and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate in the acceleration voltage range from 20 V to 80 V. It is considered that low-energy NBs can trigger Si etching because F radicals adsorb onto the Si surface and weaken Si–Si bonds. The etching rate per unit beam flux is 33 times higher than that with Ar NB. These results show that the low-energy reactive NB is useful for damage-free high speed Si etching.

  15. Light emission from Si nanoclusters formed at low temperatures

    SciTech Connect (OSTI)

    Pi, X.D.; Zalloum, O.H.Y.; Roschuk, T.; Wojcik, J.; Knights, A.P.; Mascher, P.; Simpson, P.J.

    2006-03-06

    Photoluminescence (PL) from amorphous Si nanoclusters (Si-ncls) formed by thin-film deposition via electron-cyclotron resonance plasma-enhanced chemical vapor deposition followed by annealing at temperatures {<=}875 deg. C has been investigated. We find that Si-ncls grow very slowly after their initial nucleation at low temperatures. An increase in the size of Si-ncls, which can be controlled by the annealing temperature, induces a redshift in the Si-ncl PL peak. While the emitted optical power is more than 100 times smaller than that of Si nanocrystals formed in an identically deposited film, it is increased by a factor of up to approximately four times following hydrogen passivation. The incorporation of hydrogen causes a redshift in the PL peak position, suggesting a partial hydrogenation induced bond distortion of the Si-ncls. This redshift decreases with increasing hydrogen ambient annealing temperature.

  16. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-02-05

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore » dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

  17. Optimizing the transverse thermal conductivity of 2D-SiCf/SiC composites, II. Experimental

    SciTech Connect (OSTI)

    Youngblood, Gerald E; Senor, David J; Jones, Russell H; Kowbel, W

    2002-12-31

    Model predictions of the transverse thermal conductivity (Keff) are compared to experimentally determined values as a function of temperature for a commercial 2D-SiCf/SiC made by DuPont from plain weave Hi-Nicalon fabric and with an ICVI-SiC matrix. Two versions of the DuPont composite were examined: one with a “thin” and one with a “thick” pyrolytic carbon coating of thickness 0.110 m and 1.044 m, respectively. Generally good agreement of the model predictions with measured values of Keff suggest that these models can be used to predict Keff for composites with various “non-ideal” fiber, interphase and matrix structures. Importantly, the models make it possible to separate the relative component contributions to Keff so that individual component degradation mechanisms can be examined in detail. Then, based on specific knowledge of the component degradation, the models can used to predict Keff-values for composites subjected to irradiation, oxidation, thermal cycling, or other thermal or mechanical stress treatments. Finally, model predictions were examined to suggest specific design and/or development efforts directed to optimize the overall thermal transport performance of 2D-SiCf/SiC.

  18. Oxidation-resistant interface coatings for SiC/SiC composites

    SciTech Connect (OSTI)

    Stinton, D.P.; Kupp, E.R.; Hurley, J.W.

    1996-06-01

    The characteristics of the fiber-matrix interfaces in ceramic matrix composites control the mechanical behavior of these composites. Finite element modeling (FEM) was performed to examine the effect of interface coating modulus and coefficient of thermal expansion on composite behavior. Oxide interface coatings (mullite and alumina-titania) produced by a sol-gel method were chosen for study as a result of the FEM results. Amorphous silicon carbide deposited by chemical vapor deposition (CVD) is also being investigated for interface coatings in SiC-matrix composites. Processing routes for depositing coatings of these materials were developed. Composites with these interfaces were produced and tested in flexure both as-processed and after oxidation to examine the suitability of these materials as interface coatings for SiC/SiC composites in fossil energy applications.

  19. Si/SiGe electron resonant tunneling diodes with graded spacer wells

    SciTech Connect (OSTI)

    Paul, D. J.; See, P.; Bates, R.; Griffin, N.; Coonan, B. P.; Redmond, G.; Crean, G. M.; Zozoulenko, I. V.; Berggren, K.-F.; Hollander, B.

    2001-06-25

    Resonant tunneling diodes have been fabricated using graded Si{sub 1{minus}x}Ge{sub x} (x=0.3{r_arrow}0.0) spacer wells and strained Si{sub 0.4}Ge{sub 0.6} barriers on a relaxed Si{sub 0.7}Ge{sub 0.3} n-type substrate which demonstrates negative differential resistance at up to 100 K. This design is aimed at reducing the voltage at which the peak current density is achieved. Peak current densities of 0.08A/cm{sup 2} with peak-to-valley current ratios of 1.67 have been achieved for a low peak voltage of 40 mV at 77 K. This represents an improvement of over an order of magnitude compared to previous work. {copyright} 2001 American Institute of Physics.

  20. Tin induced a-Si crystallization in thin films of Si-Sn alloys

    SciTech Connect (OSTI)

    Neimash, V. E-mail: oleks.goushcha@nuportsoft.com; Poroshin, V.; Goushcha, A. O. E-mail: oleks.goushcha@nuportsoft.com; Shepeliavyi, P.; Yukhymchuk, V.; Melnyk, V.; Kuzmich, A.; Makara, V.

    2013-12-07

    Effects of tin doping on crystallization of amorphous silicon were studied using Raman scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence techniques. Formation of silicon nanocrystals (24?nm in size) in the amorphous matrix of Si{sub 1?x}Sn{sub x}, obtained by physical vapor deposition of the components in vacuum, was observed at temperatures around 300?C. The aggregate volume of nanocrystals in the deposited film of Si{sub 1?x}Sn{sub x} exceeded 60% of the total film volume and correlated well with the tin content. Formation of structures with ?80% partial volume of the nanocrystalline phase was also demonstrated. Tin-induced crystallization of amorphous silicon occurred only around the clusters of metallic tin, which suggested the crystallization mechanism involving an interfacial molten Si:Sn layer.

  1. Thermal conductivity in nanocrystalline-SiC/C superlattices

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Habermehl, S.; Serrano, J. R.

    2015-11-17

    We reported the formation of thin film superlattices consisting of alternating layers of nitrogen-doped SiC (SiC:N) and C. Periodically terminating the SiC:N surface with a graphitic C boundary layer and controlling the SiC:N/C thickness ratio yield nanocrystalline SiC grains ranging in size from 365 to 23 nm. Frequency domain thermo-reflectance is employed to determine the thermal conductivity, which is found to vary from 35.5 W m-1 K-1 for monolithic undoped α-SiC films to 1.6 W m-1 K-1 for a SiC:N/C superlattice with a 47 nm period and a SiC:N/C thickness ratio of 11. A series conductance model is employed tomore » explain the dependence of the thermal conductivity on the superlatticestructure. Our results indicate that the thermal conductivity is more dependent on the SiC:N/C thickness ratio than the SiC:N grain size, indicative of strong boundary layerphonon scattering.« less

  2. Thermal conductivity in nanocrystalline-SiC/C superlattices

    SciTech Connect (OSTI)

    Habermehl, S.; Serrano, J. R.

    2015-11-17

    We reported the formation of thin film superlattices consisting of alternating layers of nitrogen-doped SiC (SiC:N) and C. Periodically terminating the SiC:N surface with a graphitic C boundary layer and controlling the SiC:N/C thickness ratio yield nanocrystalline SiC grains ranging in size from 365 to 23 nm. Frequency domain thermo-reflectance is employed to determine the thermal conductivity, which is found to vary from 35.5 W m-1 K-1 for monolithic undoped α-SiC films to 1.6 W m-1 K-1 for a SiC:N/C superlattice with a 47 nm period and a SiC:N/C thickness ratio of 11. A series conductance model is employed to explain the dependence of the thermal conductivity on the superlatticestructure. Our results indicate that the thermal conductivity is more dependent on the SiC:N/C thickness ratio than the SiC:N grain size, indicative of strong boundary layerphonon scattering.

  3. Synthesis, electronic and optical properties of Si nanostructures

    SciTech Connect (OSTI)

    Dinh, L.N.

    1996-09-01

    Silicon and silicon oxide nanostructures have been deposited on solid substrates, in an ultra high vacuum (UHV) chamber, by laser ablation or thermal vaporization. Laser ablation followed by substrate post annealing produced Si clusters with average size of a few nanometers, on highly oriented pyrolytic graphite (HOPG) surfaces. This technique, which is based on surface diffusion, is limited to the production of less than one layer of clusters on a given surface. The low coverage of Si clusters and the possibility of nonradiative decay of excitation in the Si cores to the HOPG substrates in these samples rendered them unsuitable for many optical measurements. Thermal vaporization of Si in an Ar buffer gas, on the contrary, yielded multilayer coverage of Si nanoclusters with a fairly narrow size distribution of about 2 nm, full width at half maximum (FWHM). As a result, further study was performed only on Si nanoclusters synthesized by thermal vaporization in a buffer gas. High resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) revealed that these nanoclusters were crystalline. However, during synthesis, if oxygen was the buffer gas, a network of amorphous Si oxide nanostructures (an-SiO{sub x}) with occasional embedded Si dots was formed. All samples showed strong infrared and/or visible photoluminescence (PL) with varying decay times from nanoseconds to microseconds depending on synthesis conditions. There were differences in PL spectra for hydrogen and oxygen passivated nc-Si, while many common PL properties between oxygen passivated nc-Si and an SiO{sub x} were observed. The observed experimental results can be best explained by a model involving absorption between quantum confined states in the Si cores and emission for which the decay times are very sensitive to surface and/or interface states.

  4. Synthesis of 4-substituted-trans-1,2-diaminocyclohexyl polyaminocarboxylate metal chelating agents for the preparation of stable radiometal antibody immunoconjugates for therapy and spect and pet imaging

    DOE Patents [OSTI]

    Mease, Ronnie C.; Kolsky, Kathryn L.; Mausner, Leonard F.; Srivastava, Suresh C.

    1997-06-03

    Cyclohexyl chelating agents useful in forming antibody-metal conjugates useful for diagnostic and therapeutic purposes. New compounds and processes of forming these compounds are disclosed including 4-haloacetamido-trans-1,2-diaminocyclohexyl polyaminocarboxylate and 4-isothiocyanato-trans-1,2-diamino cyclohexane-N, N, N', N'-tetra acetic acid.

  5. Synthesis of 4-substituted-trans-1,2-diaminocyclohexyl polyaminocarboxylate metal chelating agents for the preparation of stable radiometal antibody immunoconjugates for therapy and SPECT and PET imaging

    DOE Patents [OSTI]

    Mease, R.C.; Kolsky, K.L.; Mausner, L.F.; Srivastava, S.C.

    1997-06-03

    Cyclohexyl chelating agents useful in forming antibody-metal conjugates which are used for diagnostic and therapeutic purposes are synthesized. New compounds and processes of forming these compounds are disclosed including 4-haloacetamido-trans-1,2-diaminocyclohexyl polyaminocarboxylate and 4-isothiocyanato-trans-1,2-diamino cyclohexane-N,N,N{prime},N{prime}-tetra acetic acid.

  6. West Texas geothermal resource assessment. Part II. Preliminary utilization assessment of the Trans-Pecos geothermal resource. Final report

    SciTech Connect (OSTI)

    Gilliland, M.W.; Fenner, L.B.

    1980-01-01

    The utilization potential of geothermal resources in Trans-Pecos, Texas was assessed. The potential for both direct use and electric power generation were examined. As with the resource assessment work, the focus was on the Hueco Tanks area in northeastern El Paso County and the Presidio Bolson area in Presidio County. Suitable users of the Hueco Tanks and Presidio Bolson resource areas were identified by matching postulated temperature characteristics of the geothermal resource to the need characteristics of existing users in each resource area. The amount of geothermal energy required and the amount of fossil fuel that geothermal energy would replace were calculated for each of the users identified as suitable. Current data indicate that temperatures in the Hueco Tanks resource area are not high enough for electric power generation, but in at least part of the Presidio Bolson resource area, they may be high enough for electric power generation.

  7. Electron diffraction study of 1M illites with interstratified trans- and cis-vacant 2 : 1 layers

    SciTech Connect (OSTI)

    Zhukhlistov, A. P. Vikent'ev, I. V.; Rusinova, O. V.

    2012-03-15

    Illites from the volcanogenic Zn-Au-Ag sulfide deposit Galkinskoe (Northern Urals) have been investigated using oblique-texture electron diffraction patterns in combination with the simulation of diffraction effects. Along with single-phase tv/cv1M illites, the structures of which are formed by statistically interstratified dioctahedral 2: 1 layers with vacant trans- or cis-octahedra, illites in the form of a mixture of two interstratified tv/cv1M phases, with the dominance of tv- or cv layers, are identified. It is shown that in the latter case the diffraction pattern can also be interpreted within the single-phase tv/cv model, provided that the tv- and cv layers are distributed with some tendency to segregate. The structural features indicating the preference of the two-phase model are analyzed.

  8. Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

    SciTech Connect (OSTI)

    Michon, A.; Vezian, S.; Portail, M.; Ouerghi, A.; Zielinski, M.; Chassagne, T.

    2010-10-25

    We propose to grow graphene on SiC by a direct carbon feeding through propane flow in a chemical vapor deposition reactor. X-ray photoemission and low energy electron diffraction show that propane allows to grow few-layer graphene (FLG) on 6H-SiC(0001). Surprisingly, FLG grown on (0001) face presents a rotational disorder similar to that observed for FLG obtained by annealing on (000-1) face. Thanks to a reduced growth temperature with respect to the classical SiC annealing method, we have also grown FLG/3C-SiC/Si(111) in a single growth sequence. This opens the way for large-scale production of graphene-based devices on silicon substrate.

  9. Phonon-assisted transient electroluminescence in Si

    SciTech Connect (OSTI)

    Cheng, Tzu-Huan, E-mail: f94943139@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan (China); Chu-Su, Yu [Institute of Biomedical Engineering, National Taiwan University, Taipei, Taiwan and Department of Laboratory Medicine, National Taiwan University Hospital, Taipei, Taiwan (China); Liu, Chien-Sheng [Institute of Biomedical Engineering, National Taiwan University, Taipei, Taiwan (China); Lin, Chii-Wann [Institute of Biomedical Engineering and Institute of Electrical Engineering, National Taiwan University, Taipei, Taiwan (China)

    2014-06-30

    The phonon-replica infrared emission is observed at room temperature from indirect band gap Si light-emitting diode under forward bias. With increasing injection current density, the broadened electroluminescence spectrum and band gap reduction are observed due to joule heating. The spectral-resolved temporal response of electroluminescence reveals the competitiveness between single (TO) and dual (TO?+?TA) phonon-assisted indirect band gap transitions. As compared to infrared emission with TO phonon-replica, the retarder of radiative recombination at long wavelength region (?1.2??m) indicates lower transition probability of dual phonon-replica before thermal equivalent.

  10. First-principles study of the Pd–Si system and Pd(001)/SiC(001) hetero-structure

    SciTech Connect (OSTI)

    Turchi, P.E.A.; Ivashchenko, V.I.

    2014-11-01

    First-principles molecular dynamics simulations of the Pd(001)/3C–SiC(001) nano-layered structure were carried out at different temperatures ranging from 300 to 2100 K. Various PdSi (Pnma, Fm3m, P6m2, Pm3m), Pd2Si (P6⁻2m, P63/mmc, P3m1, P3⁻1m) and Pd3Si (Pnma, P6322, Pm3m, I4/mmm) structures under pressure were studied to identify the structure of the Pd/Si and Pd/C interfaces in the Pd/SiC systems at high temperatures. It was found that a large atomic mixing at the Pd/Si interface occurred at 1500–1800 K, whereas the Pd/C interface remained sharp even at the highest temperature of 2100 K. At the Pd/C interface, voids and a graphite-like clustering were detected. Palladium and silicon atoms interact at the Pd/Si interface to mostly form C22-Pd2Si and D011-Pd3Si fragments, in agreement with experiment.

  11. Ultra-high current density thin-film Si diode

    DOE Patents [OSTI]

    Wang; Qi

    2008-04-22

    A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

  12. Epitaxial CoSi2 on MOS devices

    DOE Patents [OSTI]

    Lim, Chong Wee; Shin, Chan Soo; Petrov, Ivan Georgiev; Greene, Joseph E.

    2005-01-25

    An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.

  13. Optimizing the transverse thermal conductivity of 2D-SiCf/SiC composites, I. Modeling

    SciTech Connect (OSTI)

    Youngblood, Gerald E.; Senor, David J.; Jones, Russell H.

    2002-12-31

    For potential fusion applications, considerable fabrication efforts have been directed to obtaining transverse thermal conductivity (Keff) values in excess of 30 W/mK (unirradiated) in the 800-1000°C temperature range for 2D-SiCf/SiC composites. To gain insight into the factors affecting Keff, at PNNL we have tested three different analytic models for predicting Keff in terms of constituent (fiber, matrix and interphase) properties. The tested models were: the Hasselman-Johnson (H-J) “2-Cylinder” model, which examines the effects of fiber-matrix (f/m) thermal barriers; the Markworth “3-Cylinder” model, which specifically examines the effects of interphase thickness and thermal conductivity; and a newly-developed Anisotropic “3-Square” model, which examines the potential effect of introducing a fiber coating with anisotropic properties to enhance (or diminish) f/m thermal coupling. The first two models are effective medium models, while the third model is a simple combination of parallel and series conductances. Model predictions suggest specific designs and/or development efforts directed to optimize the overall thermal transport performance of 2D-SiCf/SiC.

  14. Analysis and recommendations for DPA calculations in SiC

    SciTech Connect (OSTI)

    Heinisch, H.L.

    1998-09-01

    Recent modeling results, coupled with the implications of available experimental results, provide sufficient information to achieve consensus on the values of threshold displacement energies to use in displacements per atom (DPA) calculations. The values recommended here, 20 eV for C and 35 eV for Si, will be presented for adoption by the international fusion materials community at the next IEA SiC/SiC workshop.

  15. Steel-SiC Metal Matrix Composite Development

    SciTech Connect (OSTI)

    Smith, Don D.

    2005-07-17

    The goal of this project is to develop a method for fabricating SiC-reinforced high-strength steel. We are developing a metal-matrix composite (MMC) in which SiC fibers are be embedded within a metal matrix of steel, with adequate interfacial bonding to deliver the full benefit of the tensile strength of the SiC fibers in the composite.

  16. Electronics for the Si detectors in APEX

    SciTech Connect (OSTI)

    Wilt, P.R. |; Betts, R.R.; Freer, M.

    1994-07-01

    APEX (ATLAS Positron EXperiment), a collaborative effort of ANL, FSU, MSU/NSCL, Princeton, Queen`s, Rochester, Washington and Yale, is an experiment to study positron and electron production in very heavy ion collisions. The electrons and positrons are detected with two detector arrays, each consisting of 216 1 mm thick Si PIN diodes, and their energy and time-of-flight are measured. The number of detectors and limited space made it necessary to develop a system that could efficiently process and transfer signals from the detectors to the charge sensing ADC`s and data readout electronics as well as monitor the condition of the detectors. The discussion will cover the electronics designed for the Si detectors, including the charge amplifier, ``Mother board`` for the charge amplifiers, 8 channel Shaper, 16 channel Constant Fraction Discriminator (CFD), 16 channel Peak-to-FERA (PTF) and the integration of the CFD and PTF with Charge sensing ADC`s. Function and performance of the individual modules as well as the system as a whole will be discussed.

  17. Flex Fuel Optimized SI and HCCI Engine

    SciTech Connect (OSTI)

    Zhu, Guoming; Schock, Harold; Yang, Xiaojian; Huisjen, Andrew; Stuecken, Tom; Moran, Kevin; Zhen, Ron; Zhang, Shupeng

    2013-09-30

    The central objective of the proposed work is to demonstrate an HCCI (homogeneous charge compression ignition) capable SI (spark ignited) engine that is capable of fast and smooth mode transition between SI and HCCI combustion modes. The model-based control technique was used to develop and validate the proposed control strategy for the fast and smooth combustion mode transition based upon the developed control-oriented engine; and an HCCI capable SI engine was designed and constructed using production ready two-step valve-train with electrical variable valve timing actuating system. Finally, smooth combustion mode transition was demonstrated on a metal engine within eight engine cycles. The Chrysler turbocharged 2.0L I4 direct injection engine was selected as the base engine for the project and the engine was modified to fit the two-step valve with electrical variable valve timing actuating system. To develop the model-based control strategy for stable HCCI combustion and smooth combustion mode transition between SI and HCCI combustion, a control-oriented real-time engine model was developed and implemented into the MSU HIL (hardware-in-the-loop) simulation environment. The developed model was used to study the engine actuating system requirement for the smooth and fast combustion mode transition and to develop the proposed mode transition control strategy. Finally, a single cylinder optical engine was designed and fabricated for studying the HCCI combustion characteristics. Optical engine combustion tests were conducted in both SI and HCCI combustion modes and the test results were used to calibrate the developed control-oriented engine model. Intensive GT-Power simulations were conducted to determine the optimal valve lift (high and low) and the cam phasing range. Delphi was selected to be the supplier for the two-step valve-train and Denso to be the electrical variable valve timing system supplier. A test bench was constructed to develop control strategies for

  18. Synthesis and Characterization of Structured Si-Carbon Nanocomposite...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    More Documents & Publications Novel Lithium Ion Anode Structures: Overview of New DOE BATT Anode Projects Synthesis and Characterization of Structured Si-Carbon Nanocomposite ...

  19. Electrostatic Transfor of Patterned Epitaxial Graphene from SiC...

    Office of Scientific and Technical Information (OSTI)

    Electrostatic Transfor of Patterned Epitaxial Graphene from SiC (001) to Glass. Citation Details In-Document Search Title: Electrostatic Transfor of Patterned Epitaxial Graphene ...

  20. Centrotherm SiTec GmbH | Open Energy Information

    Open Energy Info (EERE)

    Germany Product: Germany-based subsidiary of Centrotherm. The unit provides turnkey manufacturing equipment for polysilicon factory. References: Centrotherm SiTec GmbH1 This...

  1. Synthesis and Characterization of Structured Si-Carbon Nanocomposite...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Anodes and Functional Polymer Binders Synthesis and Characterization of Structured Si-Carbon Nanocomposite Anodes and Functional Polymer Binders 2013 DOE Hydrogen and ...

  2. Method for the hydrogenation of poly-si

    DOE Patents [OSTI]

    Wang, Qi

    2013-11-12

    A method for hydrogenating poly-si. Poly-si is placed into the interior of a chamber. A filament is placed into the interior of a chamber. The base pressure of the interior of the chamber is evacuated, preferably to 10.sup.-6 Torr or less. The poly-si is heated for a predetermined poly-si heating time. The filament is heated by providing an electrical power to the filament. Hydrogen is supplied into the pressurized interior of the chamber comprising the heated poly-si and the heated filament. Atomic hydrogen is produced by the filament at a rate whereby the atomic hydrogen surface density at the poly-si is less than the poly-si surface density. Preferably, the poly-si is covered from the atomic hydrogen produced by the heated filament for a first predetermined covering time. Preferably, the poly-si is then uncovered from the atomic hydrogen produced by the heated filament for a first hydrogenation time.

  3. Buckeye Silicon BeSi | Open Energy Information

    Open Energy Info (EERE)

    Name: Buckeye Silicon (BeSi) Place: Toledo, Ohio Product: Ohio-based polysilicon startup focusing on modular production. Coordinates: 46.440613, -122.847838 Show Map...

  4. Boron doped Si rich oxide/SiO{sub 2} and silicon rich nitride/SiN{sub x} bilayers on molybdenum-fused silica substrates for vertically structured Si quantum dot solar cells

    SciTech Connect (OSTI)

    Lin, Ziyun Wu, Lingfeng; Jia, Xuguang; Zhang, Tian; Puthen-Veettil, Binesh; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-07-28

    Vertically structured Si quantum dots (QDs) solar cells with molybdenum (Mo) interlayer on quartz substrates would overcome current crowding effects found in mesa-structured cells. This study investigates the compatibility between boron (B) doped Si QDs bilayers and Mo-fused silica substrate. Both Si/SiO{sub 2} and Si/SiN{sub x} based QDs bilayers were studied. The material compatibility under high temperature treatment was assessed by examining Si crystallinity, microstress, thin film adhesion, and Mo oxidation. It was observed that the presence of Mo interlayer enhanced the Si QDs size confinement, crystalline fraction, and QDs size uniformity. The use of B doping was preferred compared to phosphine (PH{sub 3}) doping studied previously in terms of better surface and interface properties by reducing oxidized spots on the film. Though crack formation due to thermal mismatch after annealing remained, methods to overcome this problem were proposed in this paper. Schematic diagram to fabricate full vertical structured Si QDs solar cells was also suggested.

  5. Hydrogen Evolution at Si-based Metal-Insulator-Semiconductor...

    Office of Scientific and Technical Information (OSTI)

    Hydrogen Evolution at Si-based Metal-Insulator-Semiconductor Photoelectrodes Enhanced by Inversion Channel Charge Collection and Hydrogen Spillover Citation Details In-Document...

  6. Special Inquiry: SI-11-27 | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    November 27, 2006 Selected Controls over Classified Information at the Los Alamos National Laboratory Special Inquiry: SI-11-27 (1.96 MB) More Documents & Publications Special ...

  7. Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Diffusion of Fission Product Surrogates

    SciTech Connect (OSTI)

    Henager, Charles H.; Jiang, Weilin

    2014-11-01

    MAX phases, such as titanium silicon carbide (Ti3SiC2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti3SiC2 has been suggested in the literature as a possible fuel cladding material. Prior to the application, it is necessary to investigate diffusivities of fission products in the ternary compound at elevated temperatures. This study attempts to obtain relevant data and make an initial assessment for Ti3SiC2. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti3SiC2, SiC, and a dual-phase nanocomposite of Ti3SiC2/SiC synthesized at PNNL. Thermal annealing and in-situ Rutherford backscattering spectrometry (RBS) were employed to study the diffusivity of the various implanted species in the materials. In-situ RBS study of Ti3SiC2 implanted with Au ions at various temperatures was also performed. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti3SiC2 occurs during ion implantation at 873 K. Cs in Ti3SiC2 is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti3SiC2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Further studies of the related materials are recommended.

  8. Photoluminescence of as-grown and thermal annealed SiO{sub x}/Si-nanocrystals heterolayers grown by reactive rf sputtering

    SciTech Connect (OSTI)

    Mota-Pineda, E.; Melendez-Lira, M.; Zapata-Torres, M.; Angel, P. del; Perez-Centeno, A.; Santana-Aranda, M. A.; Jimenez-Sandoval, S.

    2010-11-15

    SiO{sub x}/Si-nanocrystals (Si NCs) heterolayers were fabricated employing a rf magnetron sputtering system. The synthesis process, through modification of the oxygen partial pressure of the plasma, promotes the synthesis of stoichiometric SiO{sub 2} layers and affect the Si NCs layer giving place to SiO{sub x}/Si NCs (1.64Si NCs. Thermal annealing at 1100 deg. C promoted the SiO{sub 2} stoichiometry in the interface and the crystallization of more Si NCs. The results allow us to clearly identify the origin of the PL bands; indicating that the near-infrared emission is related to the nonstoichiometric oxide while the red and green bands are originated in Si NCs.

  9. Improvement of magnetic and structural stabilities in high-quality Co{sub 2}FeSi{sub 1−x}Al{sub x}/Si heterointerfaces

    SciTech Connect (OSTI)

    Yamada, S.; Tanikawa, K.; Oki, S.; Kawano, M.; Miyao, M.; Hamaya, K.

    2014-08-18

    We study high-quality Co{sub 2}FeSi{sub 1−x}Al{sub x} Heusler compound/Si (0 ≤ x ≤ 1) heterointerfaces for silicon (Si)-based spintronic applications. In thermal treatment conditions, the magnetic and structural stabilities of the Co{sub 2}FeSi{sub 1−x}Al{sub x}/Si heterointerfaces are improved with increasing x in Co{sub 2}FeSi{sub 1−x}Al{sub x}. Compared with L2{sub 1}-ordered Co{sub 2}FeSi/Si, B2-ordered Co{sub 2}FeAl/Si can suppress the diffusion of Si atoms into the Heusler-compound structure. This experimental study will provide an important knowledge for applications in Si-based spin transistors with metallic source/drain contacts.

  10. Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Thermal and Mechanical Properties

    SciTech Connect (OSTI)

    Henager, Charles H.; Alvine, Kyle J.; Roosendaal, Timothy J.; Shin, Yongsoon; Nguyen, Ba Nghiep; Borlaug, Brennan A.; Jiang, Weilin

    2014-04-01

    SiC-polymers (pure polycarbosilane and polycarbosilane filled with SiC-particles) are being combined with Si and TiC powders to create a new class of polymer-derived ceramics for consideration as advanced nuclear materials in a variety of applications. Compared to pure SiC these materials have increased fracture toughness with only slightly reduced thermal conductivity. Future work with carbon nanotube (CNT) mats will be introduced with the potential to increase the thermal conductivity and the fracture toughness. At present, this report documents the fabrication of a new class of monolithic polymer derived ceramics, SiC + SiC/Ti3SiC2 dual phase materials. The fracture toughness of the dual phase material was measured to be significantly greater than Hexoloy SiC using indentation fracture toughness testing. However, thermal conductivity of the dual phase material was reduced compared to Hexoloy SiC, but was still appreciable, with conductivities in the range of 40 to 60 W/(m K). This report includes synthesis details, optical and scanning electron microscopy images, compositional data, fracture toughness, and thermal conductivity data.

  11. Ceramic Technology Project database: September 1990 summary report. [SiC, SiN, whisker-reinforced SiN, ZrO-toughened aluminas, zirconias, joints

    SciTech Connect (OSTI)

    Keyes, B.L.P.

    1992-06-01

    Data generated within the Ceramic Technology Project (CTP) represent a valuable resource for both research and industry. The CTP database was created to provide easy access to this information in electronic and hardcopy forms by using a computerized database and by issuing periodic hardcopy reports on the database contents. This report is the sixth in a series of semiannual database summaries and covers recent additions to the database, including joined brazed specimen test data. It covers 1 SiC, 34 SiN, 10 whisker-reinforced SiN, 2 zirconia-toughened aluminas, 8 zirconias, and 34 joints.

  12. Si?-implanted Si-wire waveguide photodetectors for the mid-infrared

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Souhan, Brian; Lu, Ming; Grote, Richard R.; Chen, Christine P.; Huang, Hsu-Cheng; Driscoll, Jeffrey B.; Stein, Aaron; Bakhru, Hassaram; Bergman, Keren; Green, William M. J.; et al

    2014-10-28

    CMOS-compatible Si?-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 m are demonstrated. Responsivities of 9.9 2.0 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 2.7 4.5%. The dark current is found to vary from a few microamps down to less than a nanoamp after a post-implantation annealing of 350C. The measured photocurrent dependence on input power shows a linear correspondence over more than three decades, and the frequency response of a 250 m-length p-i-n device is measured to be ~1.7 GHz formorea wavelength of ? = 2.2 m, thus potentially opening up new communication bands for photonic integrated circuits.less

  13. Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate

    SciTech Connect (OSTI)

    Ye, Han Yu, Zhongyuan

    2014-11-15

    Patterning pit on Si(001) substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in (105) pits are systematically investigated by solving Schrdinger equation for heavy-hole, which resorts to inhomogeneous strain distribution and nonlinear composition-dependent band parameters. Uniform, partitioned and equilibrium composition profile (CP) in nanoisland and inverted pyramid structure are simulated separately. We demonstrate the huge impact of composition profile on localization of heavy-hole: wave function of ground state is confined near pit facets for uniform CP, at bottom of nanoisland for partitioned CP and at top of nanoisland for equilibrium CP. Moreover, such localization is gradually compromised by the size effect as pit filling ratio or pit size decreases. The results pave the fundamental guideline of designing nanoislands on pit-patterned substrates for desired applications.

  14. Vibrational quasi-degenerate perturbation theory with optimized coordinates: Applications to ethylene and trans-1,3-butadiene

    SciTech Connect (OSTI)

    Yagi, Kiyoshi Otaki, Hiroki

    2014-02-28

    A perturbative extension to optimized coordinate vibrational self-consistent field (oc-VSCF) is proposed based on the quasi-degenerate perturbation theory (QDPT). A scheme to construct the degenerate space (P space) is developed, which incorporates degenerate configurations and alleviates the divergence of perturbative expansion due to localized coordinates in oc-VSCF (e.g., local O–H stretching modes of water). An efficient configuration selection scheme is also implemented, which screens out the Hamiltonian matrix element between the P space configuration (p) and the complementary Q space configuration (q) based on a difference in their quantum numbers (λ{sub pq} = ∑{sub s}|p{sub s} − q{sub s}|). It is demonstrated that the second-order vibrational QDPT based on optimized coordinates (oc-VQDPT2) smoothly converges with respect to the order of the mode coupling, and outperforms the conventional one based on normal coordinates. Furthermore, an improved, fast algorithm is developed for optimizing the coordinates. First, the minimization of the VSCF energy is conducted in a restricted parameter space, in which only a portion of pairs of coordinates is selectively transformed. A rational index is devised for this purpose, which identifies the important coordinate pairs to mix from others that may remain unchanged based on the magnitude of harmonic coupling induced by the transformation. Second, a cubic force field (CFF) is employed in place of a quartic force field, which bypasses intensive procedures that arise due to the presence of the fourth-order force constants. It is found that oc-VSCF based on CFF together with the pair selection scheme yields the coordinates similar in character to the conventional ones such that the final vibrational energy is affected very little while gaining an order of magnitude acceleration. The proposed method is applied to ethylene and trans-1,3-butadiene. An accurate, multi-resolution potential, which combines the MP2 and

  15. Formation and incorporation of SiF{sub 4} molecules in F-implanted preamorphized Si

    SciTech Connect (OSTI)

    De Salvador, D.; Bisognin, G.; Napolitani, E.; Mastromatteo, M.; Baggio, N.; Carnera, A.; Boscherini, F.; Cristiano, F.

    2009-09-07

    The local structure of fluorine incorporated in crystalline silicon following solid phase epitaxial regrowth was investigated by means of x-ray absorption spectroscopy at the F K-edge. We clearly demonstrate that most F is found in SiF{sub 4} molecules in the crystalline matrix. A kinetic pathway, which explains our observation and which is also able to rationalize previous results in a common and coherent framework, is proposed.

  16. Carrier mediated reduction of stiffness in nanoindented crystalline Si(100)

    SciTech Connect (OSTI)

    Kataria, S. Dhara, Sandip Dash, S.; Tyagi, A. K.

    2015-07-21

    We report the observation of carrier mediated decrease in the stiffness of crystalline (c)-Si(100) under nanoindentation. The apparent elastic moduli of heavily doped (∼1 × 10{sup 21} cm{sup −3}) p- and n-type c-Si are observed to be lower by 5.3%–7.5% than the estimated value for intrinsic (∼1 × 10{sup 14} cm{sup −3}) c-Si. The deviation observed with respect to elastic modulus remarkably matches with the estimated value while considering the electronic elastic strain effect on carrier concentration as an influence of negative pressure coefficient of band gap for Si (Γ-X). The value is predominantly higher than the reported value of a decrease of 1%–3% in stiffness as an effect of impurity in c-Si.

  17. Hot metal Si control at Kwangyang blast furnaces

    SciTech Connect (OSTI)

    Hur, N.S.; Cho, B.R.; Kim, G.Y.; Choi, J.S.; Kim, B.H.

    1995-12-01

    Studies of Si transfer in blast furnaces have shown that the Si level in pig iron is influenced more by the reaction of silicon oxide gas generation in the raceway than the chemical reaction between hot metal and slag at the drop zone. Specifications require a Si content of pig iron below 0.15% at the Kwangyang Works, but the use of soft coking coal in the blend for coke ovens, high pulverized coal injection rate into the blast furnace, and the application of lower grade iron ore has resulted in the need to develop methods to control Si in hot metal. In this paper, the results of in furnace Si control and the desiliconization skills at the casthouse floor are described.

  18. Mechanistic Selection and Growth of Twinned Bicrystalline Primary Si in Near Eutectic Al-Si Alloys

    SciTech Connect (OSTI)

    Choonho Jung

    2006-12-12

    Morphological evolution and selection of angular primary silicon is investigated in near-eutectic Al-Si alloys. Angular silicon arrays are grown directionally in a Bridgman furnace at velocities in the regime of 10{sup -3} m/sec and with a temperature gradient of 7.5 x 10{sup 3} K/m. Under these conditions, the primary Si phase grows as an array of twinned bicrystalline dendrites, where the twinning gives rise to a characteristic 8-pointed star-shaped primary morphology. While this primary Si remains largely faceted at the growth front, a complex structure of coherent symmetric twin boundaries enables various adjustment mechanisms which operate to optimize the characteristic spacings within the primary array. In the work presented here, this primary silicon growth morphology is examined in detail. In particular, this thesis describes the investigation of: (1) morphological selection of the twinned bicrystalline primary starshape morphology; (2) primary array behavior, including the lateral propagation of the starshape grains and the associated evolution of a strong <100> texture; (3) the detailed structure of the 8-pointed star-shaped primary morphology, including the twin boundary configuration within the central core; (4) the mechanisms of lateral propagation and spacing adjustment during array evolution; and (5) the thermosolutal conditions (i.e. operating state) at the primary growth front, including composition and phase fraction in the vicinity of the primary tip.

  19. Scattering mechanisms in shallow undoped Si/SiGe quantum wells

    SciTech Connect (OSTI)

    Laroche, D.; Nielsen, E.; Lu, T. M.; Huang, S.-H.; Chuang, Y.; Li, J.-Y. Liu, C. W.

    2015-10-15

    We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ∼ 100 nm to ∼ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/semiconductor interface are the dominant scattering source. The power-law exponent of the electron mobility versus density curve, μ ∝ n{sup α}, is extracted as a function of the depth of the Si quantum well. At intermediate densities, the power-law dependence is characterized by α ∼ 2.3. At the highest achievable densities in the quantum wells buried at intermediate depth, an exponent α ∼ 5 is observed. We propose and show by simulations that this increase in the mobility dependence on the density can be explained by a non-equilibrium model where trapped electrons smooth out the potential landscape seen by the two-dimensional electron gas.

  20. Scattering mechanisms in shallow undoped Si/SiGe quantum wells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Laroche, Dominique; Huang, S. -H.; Nielsen, Erik; Chuang, Y.; Li, J. -Y.; Liu, C. W.; Lu, Tzu -Ming

    2015-10-07

    We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ~ 100 nm to ~ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/semiconductor interface are the dominant scattering source. The power-law exponent of the electron mobility versus density curve, μ ∝ nα, is extracted as a function of the depth of the Si quantum well. At intermediate densities, the power-law dependence is characterized by α ~ 2.3. At the highest achievable densities in the quantum wellsmore » buried at intermediate depth, an exponent α ~ 5 is observed. Lastly, we propose and show by simulations that this increase in the mobility dependence on the density can be explained by a non-equilibrium model where trapped electrons smooth out the potential landscape seen by the two-dimensional electron gas.« less

  1. Scattering mechanisms in shallow undoped Si/SiGe quantum wells

    SciTech Connect (OSTI)

    Laroche, Dominique; Huang, S. -H.; Nielsen, Erik; Chuang, Y.; Li, J. -Y.; Liu, C. W.; Lu, Tzu -Ming

    2015-10-07

    We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ~ 100 nm to ~ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/semiconductor interface are the dominant scattering source. The power-law exponent of the electron mobility versus density curve, μ ∝ nα, is extracted as a function of the depth of the Si quantum well. At intermediate densities, the power-law dependence is characterized by α ~ 2.3. At the highest achievable densities in the quantum wells buried at intermediate depth, an exponent α ~ 5 is observed. Lastly, we propose and show by simulations that this increase in the mobility dependence on the density can be explained by a non-equilibrium model where trapped electrons smooth out the potential landscape seen by the two-dimensional electron gas.

  2. Resonant tunneling with high peak to valley current ratio in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers at room temperature

    SciTech Connect (OSTI)

    Chen, D. Y.; Sun, Y.; He, Y. J.; Xu, L.; Xu, J.

    2014-01-28

    We have investigated carrier transport in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers by room temperature current-voltage measurements. Resonant tunneling signatures accompanied by current peaks are observed. Carrier transport in the multi-layers were analyzed by plots of ln(I/V{sup 2}) as a function of 1/V and ln(I) as a function of V{sup 1/2}. Results suggest that besides films quality, nc-Si and barrier sub-layer thicknesses are important parameters that restrict carrier transport. When thicknesses are both small, direct tunneling dominates carrier transport, resonant tunneling occurs only at certain voltages and multi-resonant tunneling related current peaks can be observed but with peak to valley current ratio (PVCR) values smaller than 1.5. When barrier thickness is increased, trap-related and even high field related tunneling is excited, causing that multi-current peaks cannot be observed clearly, only one current peak with higher PVCR value of 7.7 can be observed. While if the thickness of nc-Si is large enough, quantum confinement is not so strong, a broad current peak with PVCR value as high as 60 can be measured, which may be due to small energy difference between the splitting energy levels in the quantum dots of nc-Si. Size distribution in a wide range may cause un-controllability of the peak voltages.

  3. In situ study of the endotaxial growth of hexagonal CoSi{sub 2} nanoplatelets in Si(001)

    SciTech Connect (OSTI)

    Silva Costa, Daniel da; Kellermann, Guinther; Huck-Iriart, Cristián; Giovanetti, Lisandro J.; Requejo, Félix G.

    2015-11-30

    This investigation aims at studying–by in situ grazing-incidence small-angle x-ray scattering–the process of growth of hexagonal CoSi{sub 2} nanoplatelets endotaxially buried in a Si(001) wafer. The early formation of spherical Co nanoparticles with bimodal size distribution in the deposited silica thin film during a pretreatment at 500 °C and their subsequent growth at 700 °C were also characterized. Isothermal annealing at 700 °C promotes a drastic reduction in the number of the smallest Co nanoparticles and a continuous decrease in their volume fraction in the silica thin film. At the same time, Co atoms diffuse across the SiO{sub 2}/Si(001) interface into the silicon wafer, react with Si, and build up thin hexagonal CoSi{sub 2} nanoplatelets, all of them with their main surfaces parallel to Si(111) crystallographic planes. The observed progressive growths in thickness and lateral size of the hexagonal CoSi{sub 2} nanoplatelets occur at the expense of the dissolution of the small Co nanoparticles that are formed during the pretreatment at 500 °C and become unstable at the annealing temperature (700 °C). The kinetics of growth of the volume fraction of hexagonal platelets is well described by the classical Avrami equation.

  4. Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

    SciTech Connect (OSTI)

    Liu, Gang; Xu, Can; Feldman, Leonard C.; Yakshinskiy, Boris; Wielunski, Leszek; Gustafsson, Torgny; Bloch, Joseph; Dhar, Sarit

    2014-11-10

    We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D{sub 2}O) on the n-type 4H-SiC carbon face (0001{sup }) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D{sub 2}O exposure is proportional to the total D amount at the interface.

  5. Reaction-bonding preparation of Si{sub 3}N{sub 4}/MoSi{sub 2} and Si{sub 3}N{sub 4}/WSi{sub 2} composites from elemental powders

    SciTech Connect (OSTI)

    Zhang, B.R.; Marino, F.

    1997-01-01

    Si{sub 3}N{sub 4}/MoSi{sub 2} and Si{sub 3}N{sub 4}/WSi{sub 2} composites were prepared by reaction-bonding processes using as starting materials powder mixtures of Si-Mo and Si-W, respectively. A presintering step in an Ar-base atmosphere was used before nitriding for the formation of MoSi{sub 2} and WSi{sub 2}; the nitridation in a N{sub 2}-base atmosphere was followed after presintering with the total stepwise cycle of 1,350 C {times} 20 h + 1,400 C {times} 20 h + 1,450 C {times} 2 h. The final phases obtained in the two different composites were Si{sub 3}N{sub 4} and MoSi{sub 2} or WSi{sub 2}; no free elemental Si and Mo or W were detected by X-ray diffraction.

  6. Reaction of Si(111) Surface with Saturated Hydrocarbon

    SciTech Connect (OSTI)

    Suryana, Risa; Nakahara, Hitoshi; Saito, Yahachi; Ichimiya, Ayahiko

    2011-12-10

    Reaction of Si(111) surface with saturated hydrocarbon such as methane (CH{sub 4}) and ethane (C{sub 2}H{sub 6}) was carried out in a gas source molecular beam epitaxy (GSMBE). After carbonization, structures formed on the surface were observed by in situ reflection high-energy electron diffraction (RHEED). Structures transition formed on the surface were 7x7, {delta}-7x7, 1x1, and SiC structures. In the case of CH{sub 4}, the Si surfaces were carbonized at 800 deg. C for 120 min (7.2x10{sup 4} L) with a W-filament of 2800 deg. C, and SiC layers were obtained. In the case of C{sub 2}H{sub 6}, the mixture of 7x7 and SiC structure was observed. Decomposition of hydrocarbon was characterized in quadrupole mass spectroscopy (QMS) measurements. An atomic force microscopy (AFM) image of the mixture of 7x7 and SiC shows a wandering shape. Whereas, the SiC layer shows a regular step. This result seems to be related to the different in the amount of CH{sub 3} molecules on the surface.

  7. Magnetic order and crystal structure study of YNi{sub 4}Si-type NdNi{sub 4}Si

    SciTech Connect (OSTI)

    Yao, Jinlei; Isnard, O.; Morozkin, A.V.; Ivanova, T.I.; Koshkid'ko, Yu.S.; Bogdanov, A.E.; Nikitin, S.A.; Suski, W.

    2015-02-15

    Magnetic measurements and neutron powder diffraction investigation of the magnetic structure of the orthorhombic YNi{sub 4}Si-type (space group Cmmm) NdNi{sub 4}Si compound are presented. The magnetocaloric effect of NdNi{sub 4}Si is calculated in terms of the isothermal magnetic entropy change and it reaches the maximum value of –3.3 J/kg K for a field change of 50 kOe near T{sub C}=12 K. Below ∼12 K, NdNi{sub 4}Si exhibits a commensurate b-axis collinear ferromagnetic ordering with the Cmm′m magnetic space group in a zero magnetic field. At 1.5 K, the neodymium atoms have the magnetic moment of 2.37(5) μ{sub B}. The orthorhombic crystal structure and its thermal evolution are discussed in comparison with the CaCu{sub 5}-type compound. - Graphical abstract: The NdNi{sub 4}Si supplement the series of the orthorhombic derivative of the CaCu{sub 5}-type, namely the YNi{sub 4}Si-type, RNi{sub 4}Si compounds (R=Y, La, Ce, Sm, Gd–Ho). Below ∼12 K in a zero applied magnetic field, NdNi{sub 4}Si exhibits a commensurate b-axis collinear ferromagnetic ordering with the Cmm′m magnetic space group. Compared to the CaCu{sub 5}-type NdNi{sub 4}Si compound, the YNi{sub 4}Si-type counterpart has the relatively high ferromagnetic ordering temperature (9.2 K vs. 12 K), the small magnetocaloric effect (–7.3 J/kg K vs. –3.3 J/kg K for ∆H=50 kOe), and the large magnetic anisotropy at low temperatures. In contrast with CaCu{sub 5}-type NdNi{sub 4}Si, YNi{sub 4}Si-type NdNi{sub 4}Si shows distinct hysteresis loop at 2 K.We suggest that orthorhombic distortion may be used as a prospective route for optimization of permanent magnetic properties in the family of CaCu{sub 5}-type rare earth materials. - Highlights: • Below ∼12 K the YNi{sub 4}Si-type NdNi{sub 4}Si shows a ferromagnetic ordering. • MCE of NdNi{sub 4}Si reaches value of –3.3 J/kg K in 0–50 kOe near Curie point. • NdNi{sub 4}Si exhibits b-axis ferromagnetic order with the Cmm′m magnetic space

  8. Development of an SI DI Ethanol Optimized Flex Fuel Engine Using...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    an SI DI Ethanol Optimized Flex Fuel Engine Using Advanced Valvetrain Development of an SI DI Ethanol Optimized Flex Fuel Engine Using Advanced Valvetrain Presentation given at the ...

  9. Asia Silicon Qinghai Co Ltd aka Asia Si Material | Open Energy...

    Open Energy Info (EERE)

    Silicon Qinghai Co Ltd aka Asia Si Material Jump to: navigation, search Name: Asia Silicon (Qinghai) Co Ltd (aka Asia Si Material) Place: Xining, Qinghai Province, China Zip:...

  10. Stereochemical effects in the gas-phase pinacol rearrangement. 2. Ring contraction versus methyl migration in cis- and trans-1,2-dimethylcyclohexane-1,2-diol

    SciTech Connect (OSTI)

    de Petris, G.; Giacomello, P.; Pizzabiocca, A.; Renzi, G.; Speranza, M.

    1988-02-17

    The gas-phase pinacol rearrangement of cis- and trans-1,2-dimethylcyclohexane-1,2-diols, promoted by D/sub 3//sup +/, CH/sub 5//sup +//C/sub 2/H/sub 5//sup +/ and t-C/sub 4/H/sub 9//sup +/ ions, was studied by mass spectrometric and radiolytic methods in the pressure range 0.5-760 Torr. When product isomerization is inhibited, by using N(CH/sub 3/)/sub 3/ as a trapping reagent at high pressure, mixtures of 2,2-dimethylcyclohexanone and 1-acetyl-1-methylcyclopentane were recovered from the reaction. In methane, the trend of the measured relative rates for ring contraction (k/sub 5/), methyl or hydroxyl group migration (k/sub 6/) versus the rearrangement rate of pincaol itself (k/sub p/), is k/sub 6/(trans) approx. k/sub 5/(trans) greater than or equal to k/sub 5/(cis) > k/sub 6/(cis) greater than or equal to k/sub p/. No evidence for the formation of an intermediate carbenium ion was found. Stereochemical aspects of the mechanism are discussed and compared with solution data.

  11. Hail Impact Testing on Crystalline Si Modules with Flexible Packaging |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Hail Impact Testing on Crystalline Si Modules with Flexible Packaging Hail Impact Testing on Crystalline Si Modules with Flexible Packaging Presented at the PV Module Reliability Workshop, February 26 - 27 2013, Golden, Colorado pvmrw13_ps2_westpak_brown.pdf (785.64 KB) More Documents & Publications Test Procedure for UV Weathering Resistance of Backsheet The Acceleration of Degradation by HAST and Air-HAST in c-Si PV Modules Improved Reliability of PV Modules with

  12. 14.11.05 RH Stabilized Si Microwire - JCAP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stabilized Si Microwire Arrays for Solar-Driven H2O Oxidation Shaner, M. R., Hu, S., Sun, K. & Lewis, N. S. Stabilization of Si microwire arrays for solar-driven H2O oxidation to O2(g) in 1.0 M KOH(aq) using conformal coatings of amorphous TiO2. Energy & Environmental Science 8, 203-207, DOI: 10.1039/c4ee03012e (2015). Scientific Achievement Atomic-layer deposition of TiO2combined with sputtering of NiCrOxoxygen-evolution catalyst on Si microwires yields robust microwire-array

  13. Endotaxially stabilized B2-FeSi nanodots in Si (100) via ion beam co-sputtering

    SciTech Connect (OSTI)

    Cassidy, Cathal Singh, Vidyadhar; Grammatikopoulos, Panagiotis; Kioseoglou, Joseph; Lal, Chhagan; Sowwan, Mukhles

    2014-04-21

    We report on the formation of embedded B2-FeSi nanodots in [100]-oriented Si substrates, and investigate the crystallographic mechanism underlying the stabilization of this uncommon, bulk-unstable, phase. The nanodots were approximately 10 nm in size, and were formed by iron thin film deposition and subsequent annealing. Cross-sectional transmission electron microscopy, energy loss spectroscopy mapping, and quantitative image simulation and analysis were utilized to identify the phase, strain, and orientational relationship of the nanodots to the host silicon lattice. X-ray photoelectron spectroscopy was utilized to analyze the surface composition and local bonding. Elasticity calculations yielded a nanodot residual strain value of −18%. Geometrical phase analysis graphically pinpointed the positions of misfit dislocations, and clearly showed the presence of pinned (11{sup ¯}1{sup ¯}){sub Si}//(100){sub FeSi}, and unpinned (2{sup ¯}42){sub Si}//(010){sub FeSi}, interfaces. This partial endotaxy in the host silicon lattice was the mechanism that stabilized the B2-FeSi phase.

  14. A low thermal impact annealing process for SiO{sub 2}-embedded Si nanocrystals with optimized interface quality

    SciTech Connect (OSTI)

    Hiller, Daniel Gutsch, Sebastian; Hartel, Andreas M.; Zacharias, Margit; Löper, Philipp; Gebel, Thoralf

    2014-04-07

    Silicon nanocrystals (Si NCs) for 3rd generation photovoltaics or optoelectronic applications can be produced by several industrially compatible physical or chemical vapor deposition technologies. A major obstacle for the integration into a fabrication process is the typical annealing to form and crystallize these Si quantum dots (QDs) which involves temperatures ≥1100  °C for 1 h. This standard annealing procedure allows for interface qualities that correspond to more than 95% dangling bond defect free Si NCs. We study the possibilities to use rapid thermal annealing (RTA) and flash lamp annealing to crystallize the Si QDs within seconds or milliseconds at high temperatures. The Si NC interface of such samples exhibits huge dangling bond defect densities which makes them inapplicable for photovoltaics or optoelectronics. However, if the RTA high temperature annealing is combined with a medium temperature inert gas post-annealing and a H{sub 2} passivation, luminescent Si NC fractions of up to 90% can be achieved with a significantly reduced thermal load. A new figure or merit, the relative dopant diffusion length, is introduced as a measure for the impact of a Si NC annealing procedure on doping profiles of device structures.

  15. THE PECULIAR PHOTOMETRIC PROPERTIES OF 2010 WG9: A SLOWLY ROTATING TRANS-NEPTUNIAN OBJECT FROM THE OORT CLOUD

    SciTech Connect (OSTI)

    Rabinowitz, David; Schwamb, Megan E.; Hadjiyska, Elena; Tourtellotte, Suzanne; Rojo, Patricio

    2013-07-01

    We present long-term BVRI observations of 2010 WG9, an {approx}100 km diameter trans-Neptunian object (TNO) with an extremely high inclination of 70 Degree-Sign discovered by the La Silla-QUEST southern sky survey. Most of the observations were obtained with ANDICAM on the SMARTS 1.3 m at Cerro Tololo, Chile from 2010 December to 2012 November. Additional observations were made with EFOSC2 on the 3.5 m NTT telescope of the European Southern Observatory at La Silla, Chile in 2011 February. The observations reveal a sinusoidal light curve with amplitude 0.14 mag and period 5.4955 {+-} 0.0025 days, which is likely half the true rotation period. Such long rotation periods have previously been observed only for tidally evolved binary TNOs, suggesting that 2010 WG9 may be such a system. We predict a nominal separation of at least 790 km, resolvable with the Hubble Space Telescope and ground-based systems. We measure B - R = 1.318 {+-} 0.029 and V - R = 0.520 {+-} 0.018, consistent with the colors of modestly red Centaurs and Damocloids. At I-band wavelengths, we observe an unusually large variation of color with rotational phase, with R - I ranging from 0.394 {+-} 0.025 to 0.571 {+-} 0.044. We also measure an absolute R-band absolute magnitude of 7.93 {+-} 0.05 and solar phase coefficient of 0.049 {+-} 0.019 mag deg{sup -1}.

  16. Application of the Hartmann–Tran profile to precise experimental data sets of 12C2H2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Forthomme, D.; Cich, M. J.; Twagirayezu, S.; Hall, G. E.; Sears, T. J.

    2015-06-25

    Self- and nitrogen-broadened line shape data for the Pe(11) line of the ν₁ + ν₃ band of acetylene, recorded using a frequency comb-stabilized laser spectrometer, have been analyzed using the Hartmann–Tran profile (HTP) line shape model in a multispectrum fitting. In total, the data included measurements recorded at temperatures between 125 K and 296 K and at pressures between 4 and 760 Torr. New, sub-Doppler, frequency comb-referenced measurements of the positions of multiple underlying hot band lines have also been made. These underlying lines significantly affect the Pe(11) line profile at temperatures above 240 K and poorly known frequencies previouslymore » introduced errors into the line shape analyses. Thus, the behavior of the HTP model was compared to the quadratic speed dependent Voigt profile (QSDVP) expressed in the frequency and time domains. A parameter uncertainty analysis was carried out using a Monte Carlo method based on the estimated pressure, transmittance and frequency measurement errors. From the analyses, the Pe(11) line strength was estimated to be 1.2014(50) × 10-20 in cm.molecules⁻¹ units at 296 K with the standard deviation in parenthesis. For analyzing these data, we found that a reduced form of the HTP, equivalent to the QSDVP, was most appropriate because the additional parameters included in the full HTP were not well determined. As a supplement to this work, expressions for analytic derivatives and a lineshape fitting code written in Matlab for the HTP are available.« less

  17. Moment enhancement in dilute magnetic semiconductors: MnxSi1...

    Office of Scientific and Technical Information (OSTI)

    Moment enhancement in dilute magnetic semiconductors: MnxSi1-x with x 0.1% Citation Details In-Document Search Title: Moment enhancement in dilute magnetic semiconductors: ...

  18. Crystallization from high temperature solutions of Si in copper

    DOE Patents [OSTI]

    Ciszek, Theodore F.

    1994-01-01

    A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 5X10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution melt of Si in Cu at about 16% to about 90% wt. Si at a temperature range of about 800.degree. C. to about 1400.degree. C. in an inert gas; immersing a substrate in the saturated solution melt; supersaturating the solution by lowering the temperature of the saturated solution melt and holding the substrate immersed in the solution melt for a period of time sufficient to cause growing Si to precipitate out of the solution to form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.

  19. Native defects in Tl6SI4: Density functional calculations

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shi, Hongliang; Du, Mao -Hua

    2015-05-05

    In this study, Tl6SI4 is a promising room-temperature semiconductor radiation detection material. Here, we report density functional calculations of native defects and dielectric properties of Tl6SI4. Formation energies and defect levels of native point defects and defect complexes are calculated. Donor-acceptor defect complexes are shown to be abundant in Tl6SI4. High resistivity can be obtained by Fermi level pinning by native donor and acceptor defects. Deep donors that are detrimental to electron transport are identified and methods to mitigate such problem are discussed. Furthermore, we show that mixed ionic-covalent character of Tl6SI4 gives rise to enhanced Born effective charges andmore » large static dielectric constant, which provides effective screening of charged defects and impurities.« less

  20. 14.11.05 RH Stabilized Si Microwire - JCAP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stabilized Si Microwire Arrays for Solar-Driven H2O Oxidation Shaner, M. R., Hu, S., Sun, ... O2 for >2200 h with near 100% Faradaic efficiency under simulated 1 Sun illumination. ...

  1. SiXtron Advanced Materials Inc | Open Energy Information

    Open Energy Info (EERE)

    to: navigation, search Name: SiXtron Advanced Materials Inc Place: Dorval, Quebec, Canada Zip: H9P 1J1 Product: Canadian manufacturer of anti-reflective coating capital...

  2. SiLas GmbH | Open Energy Information

    Open Energy Info (EERE)

    Product: Laser technology development enterprise specialising in the processing of thin-film silicon coating. References: SiLas GmbH1 This article is a stub. You can help...

  3. Thermal decomposition of silane to form hydrogenated amorphous Si film

    DOE Patents [OSTI]

    Strongin, Myron; Ghosh, Arup K.; Wiesmann, Harold J.; Rock, Edward B.; Lutz, III, Harry A.

    1980-01-01

    This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.

  4. Thermal decomposition of silane to form hydrogenated amorphous Si

    DOE Patents [OSTI]

    Strongin, M.; Ghosh, A.K.; Wiesmann, H.J.; Rock, E.B.; Lutz, H.A. III

    Hydrogenated amorphous silicon is produced by thermally decomposing silane (SiH/sub 4/) or other gases comprising H and Si, at elevated temperatures of about 1700 to 2300/sup 0/C, in a vacuum of about 10/sup -8/ to 10/sup -4/ torr. A gaseous mixture is formed of atomic hydrogen and atomic silicon. The gaseous mixture is deposited onto a substrate to form hydrogenated amorphous silicon.

  5. Quantum confinement in Si and Ge nanostructures: Theory and experiment

    SciTech Connect (OSTI)

    Barbagiovanni, Eric G.; Lockwood, David J.; Simpson, Peter J.; Goncharova, Lyudmila V.

    2014-03-15

    The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO{sub 2}, and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si{sub 3}N{sub 4} and Al{sub 2}O{sub 3}. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters.

  6. Boron diffusion in nanocrystalline 3C-SiC

    SciTech Connect (OSTI)

    Schnabel, Manuel; Weiss, Charlotte; Rachow, Thomas; Löper, Philipp; Janz, Stefan; Canino, Mariaconcetta; Summonte, Caterina; Mirabella, Salvo; Wilshaw, Peter R.

    2014-05-26

    The diffusion of boron in nanocrystalline silicon carbide (nc-SiC) films with a grain size of 4–7 nm is studied using a poly-Si boron source. Diffusion is found to be much faster than in monocrystalline SiC as it takes place within the grain boundary (GB) network. Drive-in temperatures of 900–1000°C are suitable for creating shallow boron profiles up to 100 nm deep, while 1100°C is sufficient to flood the 200 nm thick films with boron. From the resulting plateau at 1100 °C a boron segregation coefficient of 28 between nc-SiC and the Si substrate, as well as a GB boron solubility limit of 0.2 nm{sup −2} is determined. GB diffusion in the bulk of the films is Fickian and thermally activated with D{sub GB}(T)=(3.1−5.6)×10{sup 7}exp(−5.03±0.16  eV/k{sub B}T) cm{sup 2}s{sup −1}. The activation energy is interpreted in terms of a trapping mechanism at dangling bonds. Higher boron concentrations are present at the nc-SiC surface and are attributed to immobilized boron.

  7. SiAlON ceramic compositions and methods of fabrication

    DOE Patents [OSTI]

    O'Brien, M.H.; Park, B.H.

    1994-05-31

    A method of fabricating a SiAlON ceramic body includes: (a) combining quantities of Si[sub 3]N[sub 4], Al[sub 2]O[sub 3] and CeO[sub 2] to produce a mixture; (b) forming the mixture into a desired body shape; (c) heating the body to a densification temperature of from about 1,550 C to about 1,850 C; (d) maintaining the body at the densification temperature for a period of time effective to densify the body; (e) cooling the densified body to a devitrification temperature of from about 1,200 C to about 1,400 C; and (f) maintaining the densified body at the devitrification temperature for a period of time effective to produce a [beta][prime]-SiAlON crystalline phase in the body having elemental or compound form Ce incorporated in the [beta][prime]-SiAlON crystalline phase. Further, a SiAlON ceramic body comprises: (a) an amorphous phase; and (b) a crystalline phase, the crystalline phase comprising [beta][prime]-SiAlON having lattice substituted elemental or compound form Ce.

  8. Synthesis and characterization in AuCu–Si nanostructures

    SciTech Connect (OSTI)

    Novelo, T.E.; Amézaga-Madrid, P.; Maldonado, R.D.; Oliva, A.I.; Alonzo-Medina, G.M.

    2015-03-15

    Au/Cu bilayers with different Au:Cu concentrations (25:75, 50:50 and 75:25 at.%) were deposited on Si(100) substrates by thermal evaporation. The thicknesses of all Au/Cu bilayers were 150 nm. The alloys were prepared by thermal diffusion into a vacuum oven with argon atmosphere at 690 K during 1 h. X-ray diffraction analysis revealed different phases of AuCu and CuSi alloys in the samples after annealing process. CuSi alloys were mainly obtained for 25:75 at.% samples, meanwhile the AuCuII phase dominates for samples prepared with 50:50 at.%. Additionally, the Au:Cu alloys with 75:25 at.%, produce Au{sub 2}Cu{sub 3} and Au{sub 3}Cu phases. The formed alloys were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS) to study the morphology and the elemental concentration of the formed alloys. - Highlights: • AuCu/Si alloy thin films were prepared by thermal diffusion. • Alloys prepared with 50 at.% of Au produce the AuCuII phase. • Alloys prepared with 75 at.% of Au produce Au{sub 3}Cu and Au{sub 2}Cu{sub 3} phases. • All alloys present diffusion of Si and Cu through the CuSi alloy formation.

  9. SiN{sub x} layers on nanostructured Si solar cells: Effective for optical absorption and carrier collection

    SciTech Connect (OSTI)

    Cho, Yunae; Kim, Eunah; Gwon, Minji; Kim, Dong-Wook E-mail: dwkim@ewha.ac.kr; Park, Hyeong-Ho; Kim, Joondong E-mail: dwkim@ewha.ac.kr

    2015-10-12

    We compared nanopatterned Si solar cells with and without SiN{sub x} layers. The SiN{sub x} layer coating significantly improved the internal quantum efficiency of the nanopatterned cells at long wavelengths as well as short wavelengths, whereas the surface passivation helped carrier collection of flat cells mainly at short wavelengths. The surface nanostructured array enhanced the optical absorption and also concentrated incoming light near the surface in broad wavelength range. Resulting high density of the photo-excited carriers near the surface could lead to significant recombination loss and the SiN{sub x} layer played a crucial role in the improved carrier collection of the nanostructured solar cells.

  10. All-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayers fabricated...

    Office of Scientific and Technical Information (OSTI)

    Ge and Cosub 2FeSi enable to promote the 2D epitaxial growth of Ge up to 5 nm at a ... Country of Publication: United States Language: English Subject: 36 MATERIALS SCIENCE; 71 ...

  11. Structural and photovoltaic properties of a-Si (SNc)/c-Si heterojunction fabricated by EBPVD technique

    SciTech Connect (OSTI)

    Demiro?lu, D.; Kazmanli, K.; Urgen, M.; Tatar, B.

    2013-12-16

    In last two decades sculptured thin films are very attractive for researches. Some properties of these thin films, like high porosity correspondingly high large surface area, controlled morphology; bring into prominence on them. Sculptured thin films have wide application areas as electronics, optics, mechanics, magnetic and chemistry. Slanted nano-columnar (SnC) thin films are a type of sculptured thin films. In this investigation SnC thin films were growth on n-type crystalline Si(100) and p-type crystalline Si(111) via ultra-high vacuum electron beam evaporation technique. The structural and morphological properties of the amorphous silicon thin films were investigated by XRD, Raman and FE-SEM analysis. According to the XRD and Raman analysis the structure of thin film was amorphous and FE-SEM analysis indicated slanted nano-columns were formed smoothly. Slanted nano-columns a-Si/c-Si heterojunction were prepared as using a photovoltaic device. In this regard we were researched photovoltaic properties of these heterojunction with current-voltage characterization under dark and illumination conditions. Electrical parameters were determined from the current-voltage characteristic in the dark conditions zero-bias barrier height ?{sub B0}?=?0.83?1.00eV; diode ideality factor ??=?11.71?10.73; series resistance R{sub s}?=?260?31.1 k? and shunt resistance R{sub sh}?=?25.71?63.5 M? SnC a-Si/n-Si and SnC a-Si/p-Si heterojunctions shows a pretty good photovoltaic behavior about 10{sup 3}- 10{sup 4} times. The obtained photovoltaic parameters are such as short circuit current density J{sub sc} 83-40 mA/m{sup 2}, open circuit voltage V{sub oc} 900-831 mV.

  12. Properties of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters

    SciTech Connect (OSTI)

    Dong, Yi; Rehman, Habib ur; Springborg, Michael

    2015-01-22

    The structures of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters with up to 44 atoms have been determined theoretically using an unbiased structure-optimization method in combination with a parametrized, density-functional description of the total energy for a given structure. By analyzing the total energy in detail, particularly stable clusters are identified. Moreover, general trends in the structures are identified with the help of specifically constructed descriptors.

  13. Tunneling magnetoresistance in Fe{sub 3}Si/MgO/Fe{sub 3}Si(001) magnetic tunnel junctions

    SciTech Connect (OSTI)

    Tao, L. L.; Liang, S. H.; Liu, D. P.; Wei, H. X.; Han, X. F.; Wang, Jian

    2014-04-28

    We present a theoretical study of the tunneling magnetoresistance (TMR) and spin-polarized transport in Fe{sub 3}Si/MgO/Fe{sub 3}Si(001) magnetic tunnel junction (MTJ). It is found that the spin-polarized conductance and bias-dependent TMR ratios are rather sensitive to the structure of Fe{sub 3}Si electrode. From the symmetry analysis of the band structures, we found that there is no spin-polarized Δ{sub 1} symmetry bands crossing the Fermi level for the cubic Fe{sub 3}Si. In contrast, the tetragonal Fe{sub 3}Si driven by in-plane strain reveals half-metal nature in terms of Δ{sub 1} state. The giant TMR ratios are predicted for both MTJs with cubic and tetragonal Fe{sub 3}Si electrodes under zero bias. However, the giant TMR ratio resulting from interface resonant transmission for the former decreases rapidly with the bias. For the latter, the giant TMR ratio can maintain up to larger bias due to coherent transmission through the majority-spin Δ{sub 1} channel.

  14. Hydrogen intercalation of single and multiple layer graphene synthesized on Si-terminated SiC(0001) surface

    SciTech Connect (OSTI)

    So?tys, Jakub; Piechota, Jacek; Ptasinska, Maria; Krukowski, Stanis?aw

    2014-08-28

    Ab initio density functional theory simulations were used to investigate the influence of hydrogen intercalation on the electronic properties of single and multiple graphene layers deposited on the SiC(0001) surface (Si-face). It is shown that single carbon layer, known as a buffer layer, covalently bound to the SiC substrate, is liberated after hydrogen intercalation, showing characteristic Dirac cones in the band structure. This is in agreement with the results of angle resolved photoelectron spectroscopy measurements of hydrogen intercalation of SiC-graphene samples. In contrast to that hydrogen intercalation has limited impact on the multiple sheet graphene, deposited on Si-terminated SiC surface. The covalently bound buffer layer is liberated attaining its graphene like structure and dispersion relation typical for multilayer graphene. Nevertheless, before and after intercalation, the four layer graphene preserved the following dispersion relations in the vicinity of K point: linear for (AAAA) stacking, direct parabolic for Bernal (ABAB) stacking and wizard hat parabolic for rhombohedral (ABCA) stacking.

  15. Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO{sub 2} matrix

    SciTech Connect (OSTI)

    Saxena, Nupur Kumar, Pragati; Gupta, Vinay

    2015-05-15

    Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2} matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO{sub 2} is an important issue to fabricate high efficiency devices based on Si-NCs. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 C. This suggests that by controlling the annealing temperature, the dispersion of Si-NCs can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters.

  16. Composites of Upgraded Metallurgical Grade (UMG) Si with Photovoltaic (PV) Grade Si

    SciTech Connect (OSTI)

    Hovel, Harold; Prettyman, Kevin; Krause, Rainer; Dipankar, Roy

    2015-03-27

    At the beginning of this project 125 wafers of UMG material blended with non-UMG were obtained in the various blends; 50/50,70/30,80/20. 90/10 and 100% UMG. Solar grade , non-UMG material was used for comparison. Many techniques for starting substrate evaluation were used including lifetime, resitivity, SEM, IPCMS. Some degree of gettering was implemented by lengthening the time of phosphorous diffusion. The UMG/solar blends resulted in 14.5% -15% efficiencies, and even 100% UMG showed 14.5% values, not less than standard cells manufactured at the time and an encouraging result for the prospects of using UMG material due to the lower $/watt. A later decline in the cost of Si and an emphasis on reaching higher efficiencies in general led to a vanishing interest in the use of UMG.

  17. Absence of quantum confinement effects in the photoluminescence of Si{sub 3}N{sub 4}–embedded Si nanocrystals

    SciTech Connect (OSTI)

    Hiller, D. Zelenina, A.; Gutsch, S.; Zacharias, M.; Dyakov, S. A.; López-Conesa, L.; López-Vidrier, J.; Peiró, F.; Garrido, B.; Estradé, S.; Schnabel, M.; Weiss, C.; Janz, S.

    2014-05-28

    Superlattices of Si-rich silicon nitride and Si{sub 3}N{sub 4} are prepared by plasma-enhanced chemical vapor deposition and, subsequently, annealed at 1150 °C to form size-controlled Si nanocrystals (Si NCs) embedded in amorphous Si{sub 3}N{sub 4}. Despite well defined structural properties, photoluminescence spectroscopy (PL) reveals inconsistencies with the typically applied model of quantum confined excitons in nitride-embedded Si NCs. Time-resolved PL measurements demonstrate 10{sup 5} times faster time-constants than typical for the indirect band structure of Si NCs. Furthermore, a pure Si{sub 3}N{sub 4} reference sample exhibits a similar PL peak as the Si NC samples. The origin of this luminescence is discussed in detail on the basis of radiative defects and Si{sub 3}N{sub 4} band tail states in combination with optical absorption measurements. The apparent absence of PL from the Si NCs is explained conclusively using electron spin resonance data from the Si/Si{sub 3}N{sub 4} interface defect literature. In addition, the role of Si{sub 3}N{sub 4} valence band tail states as potential hole traps is discussed. Most strikingly, the PL peak blueshift with decreasing NC size, which is often observed in literature and typically attributed to quantum confinement (QC), is identified as optical artifact by transfer matrix method simulations of the PL spectra. Finally, criteria for a critical examination of a potential QC-related origin of the PL from Si{sub 3}N{sub 4}-embedded Si NCs are suggested.

  18. Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Annual Report

    SciTech Connect (OSTI)

    Henager, Charles H.; Alvine, Kyle J.; Roosendaal, Timothy J.; Shin, Yongsoon; Nguyen, Ba Nghiep; Borlaug, Brennan A.; Jiang, Weilin; Arreguin, Shelly A.

    2015-01-15

    A new dual-phase nanocomposite of Ti₃SiC₂/SiC is being synthesized using preceramic polymers, ceramic powders, and carbon nanotubes (CNTs) designed to be suitable for advanced nuclear reactors and perhaps as fuel cladding. The material is being designed to have superior fracture toughness compared to SiC, adequate thermal conductivity, and higher density than SiC/SiC composites. This annual report summarizes the progress towards this goal and reports progress in understanding certain aspects of the material behavior but some shortcomings in achieving full density or in achieving adequate incorporation of CNTs. The measured thermal conductivity is adequate and falls into an expected range based on SiC and Ti₃SiC₂. Part of this study makes an initial assessment for Ti₃SiC₂ as a barrier to fission product transport. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti₃SiC₂, SiC, and a synthesized at PNNL. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti₃SiC₂ occurs during ion implantation at 873 K. Cs in Ti₃SiC₂ is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti₃SiC₂ as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Progress is reported in thermal conductivity modeling of SiC-based materials that is relevant to this research, as is progress in modeling the effects of CNTs on fracture strength of SiC-based materials.

  19. Phanerozoic tectono-stratigraphic evolution of the Trans-Pecos and Permian basin regions (Mexico, Texas, New Mexico) using Landsat imagery, subsurface and outcrop data

    SciTech Connect (OSTI)

    Markello, J.R.; Sarg, J.F.

    1996-08-01

    Integrating regional Landsat imagery, outcrop field studies, and subsurface data has resulted in a more comprehensive understanding and delineation of the tectono-stratigraphic evolution of the Trans-Pecos region. Landsat imagery were acquired and registered to the existing 1:25000 scale maps and mosaiced to create a regional view of the Trans-Pecos and Permian basin region. The imagery were used to extrapolate and map key stratigraphic and tectonic elements after calibration from documented outcrop and subsurface data. The interpretations aided in the extrapolation of scattered control information and were critical in the complete reconstruction of the geologic history of the area. The Trans-Pecos Phanerozoic history comprises five tectono-depositional phases, and these have controlled the shape of the modem landscape: (1) Late Proterozoic rifting (Gondwana from Laurentia), and development of the Early-Middle Paleozoic Tobosa basin; (2) Pennsylvanian collision (South and North Americas), and differentiation of the Tobosa basin into the Midland, Delaware, Orogrande, and Pedregosa basins separated by basement blocks: Central Basin Platform, Diablo Platform, Burro-Florida Platform; (3) Middle Mesozoic transtensional rifting (Mexico from North America), and Late Jurassic failed rifting of the Mexican Chihuahua and Coahuila Troughs west and south of the Diablo Platform; (4) Late Mesozoic Laramide collision (Mexico and Texas), and development of the Chihuahua fold/thrust belt limited by the western margin of the Diablo Platform; (5) Late Cenozoic North American basin and Range rifting, and development of Rio Grande grabens, block-faulted mountains, and volcanics. The Tobosa basin was a passive-margin interior sag; its continental margin was south of the Marathons.

  20. Quantum wells on 3C-SiC/NH-SiC heterojunctions. Calculation of spontaneous polarization and electric field strength in experiments

    SciTech Connect (OSTI)

    Sbruev, I. S.; Sbruev, S. B.

    2010-10-15

    The results of experiments with quantum wells on 3C-SiC/4H-SiC and 3C-SiC/6H-SiC heterojunctions obtained by various methods are reconsidered. Spontaneous polarizations, field strengths, and energies of local levels in quantum wells on 3C-SiC/NH-SiC heterojunctions were calculated within a unified model. The values obtained are in agreement with the results of all considered experiments. Heterojunction types are determined. Approximations for valence band offsets on heterojunctions between silicon carbide polytypes and the expression for calculating local levels in quantum wells on the 3C-SiC/NH-SiC heterojunction are presented. The spontaneous polarizations and field strengths induced by spontaneous polarization on 3C-SiC/4H-SiC and 3C-SiC/6H-SiC heterojunctions were calculated as 0.71 and 0.47 C/m{sup 2} and 0.825 and 0.55 MV/cm, respectively.

  1. Transparent conductor-embedding nanolens for Si solar cells

    SciTech Connect (OSTI)

    Kim, Joondong E-mail: junsin@skku.edu Kumar, Melvin David; Yun, Ju-Hyung; Kim, Hongsik; Park, Hyeong-Ho; Lee, Eunsongyi; Kim, Dong-wook; Kim, Hyunyub; Kim, Mingeon; Yi, Junsin E-mail: junsin@skku.edu; Jeong, Chaehwan E-mail: junsin@skku.edu

    2015-04-13

    We present a large-scale applicable nanolens-embedding solar cell. An electrically conductive and optically transparent indium-tin-oxide (ITO) thin film was coated on a Si substrate. After then, periodically patterned ITO nanodome-arrays were formed on the ITO film by using a nano-imprint method. This structure is effective to reduce the incident light reflection for broad wavelengths and also efficient to drive the incident photons into a light-absorbing Si substrate. There exist two electric fields. One is by a p/n junction and the other is by the light absorption into Si. We designed nanolens structures to overlap two electric fields and demonstrate highly improved solar cell performances of current and voltage values from a planar structure.

  2. Thermophysical properties of U3Si2 to 1773K

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    White, Joshua Taylor; Nelson, Andrew Thomas; Dunwoody, John Tyler; Byler, David Darrin; Safarik, Douglas Joseph; McClellan, Kenneth James

    2015-05-08

    Use of U3Si2 in nuclear reactors requires accurate thermophysical property data to capture heat transfer within the core. Compilation of the limited previous research efforts focused on the most critical property, thermal conductivity, reveals extensive disagreement. Assessment of this data is challenged by the fact that the critical structural and chemical details of the material used to provide historic data is either absent or confirms the presence of significant impurity phases. This study was initiated to fabricate high purity U3Si2 to quantify the coefficient of thermal expansion, heat capacity, thermal diffusivity, and thermal conductivity from room temperature to 1773 K.more » Here, the datasets provided in this manuscript will facilitate more detailed fuel performance modeling to assess both current and proposed reactor designs that incorporate U3Si2.« less

  3. Joining of beta-SiC by spark plasma sintering

    SciTech Connect (OSTI)

    Grasso, Salvatore; Tatarko, Peter; Rizzo, S.; Porwal, Harshit; Hu, Chunfeng; Katoh, Yutai; Salvo, M; Reece, Michael John; Ferraris, Monica

    2014-01-01

    Spark plasma sintering (SPS) was employed to join monolithic -SiC with or without titanium as intermediate joining material. Both the localizedand rapid heating contributed to the inherent energy saving of electric current assisted joining technique. The effects of uniaxial pressure and surfacepreparation were analyzed independently with respect to the flexural strength and the morphology of the joints. In particular samples polisheddown to 1 m and joined at 1900 C for 5 min achieved the strength of the as received material. The failure occurred outside the joining interface,confirming the optimum quality of the joint. Pressure in combination with surface preparation was necessary to achieve perfect adhesion and porefree direct joining of SiC. The use of Ti foil as a joining material and pressure allowed joining of unpolished SiC.

  4. Electronic and magnetic properties of Si substituted Fe3Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shanavas, Kavungal Veedu; McGuire, Michael A.; Parker, David S.

    2015-09-23

    Using first principles calculations we studied the effect of Si substitution in the hexagonal Fe3Ge. We find the low temperature magnetic anisotropy in this system to be planar and originating mostly from the spin-orbit coupling in Fe-d states. Reduction of the unitcell volume reduces the in-plane magnetic anisotropy, eventually turning it positive which reorients the magnetic moments to the axial direction. We find that substituting Ge with the smaller Si ions also reduces the anisotropy, potentially enhancing the region of stability of the axial magnetization, which is beneficial for magnetic applications. Thus our experimental measurements on samples of Fe3Ge1–xSix confirmmore » these predictions and show that substitution of about 6% of the Ge with Si increases by approximately 35 K the temperature range over which anisotropy is uniaxial.« less

  5. Temperature dependent transport characteristics of graphene/n-Si diodes

    SciTech Connect (OSTI)

    Parui, S.; Ruiter, R.; Zomer, P. J.; Wojtaszek, M.; Wees, B. J. van; Banerjee, T.

    2014-12-28

    Realizing an optimal Schottky interface of graphene on Si is challenging, as the electrical transport strongly depends on the graphene quality and the fabrication processes. Such interfaces are of increasing research interest for integration in diverse electronic devices as they are thermally and chemically stable in all environments, unlike standard metal/semiconductor interfaces. We fabricate such interfaces with n-type Si at ambient conditions and find their electrical characteristics to be highly rectifying, with minimal reverse leakage current (<10{sup ?10}?A) and rectification of more than 10{sup 6}. We extract Schottky barrier height of 0.69?eV for the exfoliated graphene and 0.83?eV for the CVD graphene devices at room temperature. The temperature dependent electrical characteristics suggest the influence of inhomogeneities at the graphene/n-Si interface. A quantitative analysis of the inhomogeneity in Schottky barrier heights is presented using the potential fluctuation model proposed by Werner and Gttler.

  6. Joining SI3N4 for Advanced Turbomachinery Applications

    SciTech Connect (OSTI)

    GLASS, S. JILL; LOEHMAN, RONALD E.; HOSKING, F. MICHAEL; STEPHENS JR., JOHN J.; VIANCO, PAUL T.; NEILSEN, MICHAEL K.; WALKER, CHARLES A.; POLLINGER, J.P.; MAHONEY, F.M.; QUILLEN, B.G.

    2000-07-01

    The main objective of this project was to develop reliable, low-cost techniques for joining silicon nitride (Si{sub 3}N{sub 4}) to itself and to metals. For Si{sub 3}N{sub 4} to be widely used in advanced turbomachinery applications, joining techniques must be developed that are reliable, cost-effective, and manufacturable. This project addressed those needs by developing and testing two Si{sub 3}N{sub 4} joining systems; oxynitride glass joining materials and high temperature braze alloys. Extensive measurements were also made of the mechanical properties and oxidation resistance of the braze materials. Finite element models were used to predict the magnitudes and positions of the stresses in the ceramic regions of ceramic-to-metal joints sleeve and butt joints, similar to the geometries used for stator assemblies.

  7. N-V{sub Si}-related center in non-irradiated 6H SiC nanostructure

    SciTech Connect (OSTI)

    Bagraev, Nikolay; Danilovskii, Eduard; Gets, Dmitrii; Klyachkin, Leonid; Malyarenko, Anna; Kalabukhova, Ekaterina; Shanina, Bella; Savchenko, Dariya

    2014-02-21

    We present the first findings of the vacancy-related centers identified by the electron spin resonance (ESR) and electrically-detected (ED) ESR method in the non-irradiated 6H-SiC nanostructure. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the ?-barriers heavily doped with boron on the surface of the n-type 6H-SiC (0001) wafer. The EDESR method by measuring the only magnetoresistance of the 6H SiC nanostructure under the high frequency generation from the ?-barriers appears to allow the identification of the silicon vacancy centers as well as the triplet center with spin state S=1. The same triplet center that is characterized by the larger value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. The hyperfine (hf) lines in the ESR and EDESR spectra originating from the hf interaction with the {sup 14}N nucleus allow us to attribute this triplet center to the N-V{sub Si} defect.

  8. Synthesis of SiO{sub 2}/?-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition

    SciTech Connect (OSTI)

    Zhang, Zhikun; Bi, Kaifeng; Liu, Yanhong; Qin, Fuwen; Liu, Hongzhu; Bian, Jiming; Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050 ; Zhang, Dong; Miao, Lihua; Department of Computer and Mathematical Basic Teaching, Shenyang Medical College, Shenyan 110034

    2013-11-18

    ?-SiC thin films were synthesized directly on graphite by hot filament chemical vapor deposition at low temperature. SiH{sub 4} diluted in hydrogen was employed as the silicon source, while graphite was functioned as both substrate and carbon source for the as-grown ?-SiC films. X-ray diffraction and Fourier transform infrared analysis indicate that SiO{sub 2}/?-SiC/graphite hybrid composite was formed after post annealing treatment, and its crystalline quality can be remarkably improved under optimized annealing conditions. The possible growth mechanism was proposed based on in situ etching of graphite by reactive hydrogen radicals at the atomic level.

  9. Recovery of Mo/Si multilayer coated optical substrates

    DOE Patents [OSTI]

    Baker, S.L.; Vernon, S.P.; Stearns, D.G.

    1997-12-16

    Mo/Si multilayers are removed from superpolished ZERODUR and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. The two step dry etching process removes SiO{sub 2} overlayer with a fluroine-containing gas and then moves molybdenum and silicon multilayers with a chlorine-containing gas. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates. 5 figs.

  10. Recovery of Mo/Si multilayer coated optical substrates

    DOE Patents [OSTI]

    Baker, Sherry L.; Vernon, Stephen P.; Stearns, Daniel G.

    1997-12-16

    Mo/Si multilayers are removed from superpolished ZERODUR and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. The two step dry etching process removes SiO.sub.2 overlayer with a fluroine-containing gas and then moves molybdenum and silicon multilayers with a chlorine-containing gas. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates.

  11. 15.08.07 RH Si Microwire Photoanode - JCAP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A High-Performance Si Microwire Photocathode Coupled with Ni-Mo Catalyst Shaner, M. R., McKone, J. R., Gray, H. B. & Lewis, N. S. Functional integration of Ni-Mo electrocatalysts with i microwire array photocathodes to simultaneously achieve high fill factors and light-limited photocurrent densities for solar-driven hydrogen evolution. Energy & Environmental Science, DOI: 10.1039/C5EE01076D (2015). Scientific Achievement We have designed and demonstrated a H2-evolving Si microwire

  12. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect (OSTI)

    Steglich, Martin; Schrempel, Frank; Fchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Hche, Thomas; Tnnermann, Andreas; Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380C. Typical Stransky-Krastanov growth is observed at 410C. At lower temperatures (320C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  13. Photoluminescence from Si nanocrystals exposed to a hydrogen plasma

    SciTech Connect (OSTI)

    Jung, Yoon-Jin; Yoon, Jong-Hwan; Elliman, R. G.; Wilkinson, A. R.

    2008-10-15

    Si nanocrystals embedded in SiO{sub 2} films were exposed to an atomic H plasma at different temperatures. Photoluminescence intensity from the nanocrystals increases with increasing exposure time, followed by saturation that depends on the exposure temperature. The saturation level depends on the final exposure temperature and shows no dependence on the thermal history of exposure. This behavior is shown to be consistent with a model in which the steady-state passivation level is determined by a balance between defect passivation and depassivation by H, with the activation energy for the passivation reaction being larger than that for the depassivation reaction.

  14. Interfacing the Ab initio multiple spawning method with electronic structure methods in GAMESS: Photodecay of trans-Azomethane

    SciTech Connect (OSTI)

    Gaenko, Alexander; DeFusco, Albert; Varganov, Sergey A.; Martnez, Todd J.; Gordon, Mark S.

    2014-10-20

    This work presents a nonadiabatic molecular dynamics study of the nonradiative decay of photoexcited trans-azomethane, using the ab initio multiple spawning (AIMS) program that has been interfaced with the General Atomic and Molecular Electronic Structure System (GAMESS) quantum chemistry package for on-the-fly electronic structure evaluation. The interface strategy is discussed, and the capabilities of the combined programs are demonstrated with a nonadiabatic molecular dynamics study of the nonradiative decay of photoexcited trans-azomethane. Energies, gradients, and nonadiabatic coupling matrix elements were obtained with the state-averaged complete active space self-consistent field method, as implemented in GAMESS. The influence of initial vibrational excitation on the outcome of the photoinduced isomerization is explored. Increased vibrational excitation in the CNNC torsional mode shortens the excited state lifetime. Depending on the degree of vibrational excitation, the excited state lifetime varies from ~60200 fs. As a result, these short lifetimes are in agreement with time-resolved photoionization mass spectroscopy experiments.

  15. Structure of a putative trans-editing enzyme for prolyl-tRNA synthetase from Aeropyrum pernix K1 at 1.7 Å resolution

    SciTech Connect (OSTI)

    Murayama, Kazutaka; Kato-Murayama, Miyuki; Katsura, Kazushige; Uchikubo-Kamo, Tomomi; Yamaguchi-Hirafuji, Machiko; Kawazoe, Masahito; Akasaka, Ryogo; Hanawa-Suetsugu, Kyoko; Hori-Takemoto, Chie; Terada, Takaho; Shirouzu, Mikako; Yokoyama, Shigeyuki

    2005-01-01

    The three-dimensional structure of the APE2540 protein from A. pernix K1 has been determined by the multiple anomalous dispersion method at 1.7 Å resolution. The structure includes two monomers in the asymmetric unit and shares structural similarity with the YbaK protein or cysteinyl-tRNA{sup Pro} deacylase from H. influenzae. The crystal structure of APE2540, the putative trans-editing enzyme ProX from Aeropyrum pernix K1, was determined in a high-throughput manner. The crystal belongs to the monoclinic space group P2{sub 1}, with unit-cell parameters a = 47.4, b = 58.9, c = 53.6 Å, β = 106.8°. The structure was solved by the multiwavelength anomalous dispersion method at 1.7 Å and refined to an R factor of 16.8% (R{sub free} = 20.5%). The crystal structure includes two protein molecules in the asymmetric unit. Each monomer consists of eight β-strands and seven α-helices. A structure-homology search revealed similarity between the trans-editing enzyme YbaK (or cysteinyl-tRNA{sup Pro} deacylase) from Haemophilus influenzae (HI1434; 22% sequence identity) and putative ProX proteins from Caulobacter crescentus (16%) and Agrobacterium tumefaciens (21%)

  16. Robust diamond-like Fe-Si network in the zero-strain NaxFeSiO4 cathode

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ye, Zhuo; Zhao, Xin; Li, Shouding; Wu, Shunqing; Wu, Ping; Nguyen, Manh Cuong; Guo, Jianghuai; Mi, Jinxiao; Gong, Zhengliang; Zhu, Zi -Zhong; et al

    2016-07-14

    Sodium orthosilicates Na2MSiO4 (M denotes transition metals) have attracted much attention due to the possibility of exchanging two electrons per formula unit. In this work, we report a group of sodium iron orthosilicates Na2FeSiO4. Their crystal structures are characterized by a diamond-like Fe-Si network. The Fe-Si network is quite robust against the charge/discharge process, which explains the high structural stability observed in experiment. Furthermore, using the density functional theory within the GGA + U framework and X-ray diffraction studies, the crystal structures and structural stabilities during the sodium extraction/re-insertion process are systematically investigated.

  17. Lithium diffusion at Si-C interfaces in silicon-graphene composites

    SciTech Connect (OSTI)

    Odbadrakh, Khorgolkhuu [Joint Institute for Computational Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States); McNutt, N. W. [Department of Chemical and Biomolecular Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States); Nicholson, D. M. [Computational Science and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States); Department of Physics, University of North Carolina, Asheville, North Carolina 28804 (United States); Rios, O. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States); Keffer, D. J. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States)

    2014-08-04

    Models of intercalated Li and its diffusion in Si-Graphene interfaces are investigated using density functional theory. Results suggest that the presence of interfaces alters the energetics of Li binding and diffusion significantly compared to bare Si or Graphene surfaces. Our results show that cavities along reconstructed Si surface provide diffusion paths for Li. Diffusion barriers calculated along these cavities are significantly lower than penetration barriers to bulk Si. Interaction with Si surface results in graphene defects, creating Li diffusion paths that are confined along the cavities but have still lower barrier than in bulk Si.

  18. Light harvesting with Ge quantum dots embedded in SiO{sub 2} or Si{sub 3}N{sub 4}

    SciTech Connect (OSTI)

    Cosentino, Salvatore Raciti, Rosario; Simone, Francesca; Crupi, Isodiana; Terrasi, Antonio; Mirabella, Salvo; Sungur Ozen, Emel; Aydinli, Atilla; Mio, Antonio M.; Nicotra, Giuseppe; Turan, Rasit

    2014-01-28

    Germanium quantum dots (QDs) embedded in SiO{sub 2} or in Si{sub 3}N{sub 4} have been studied for light harvesting purposes. SiGeO or SiGeN thin films, produced by plasma enhanced chemical vapor deposition, have been annealed up to 850?C to induce Ge QD precipitation in Si based matrices. By varying the Ge content, the QD diameter can be tuned in the 39?nm range in the SiO{sub 2} matrix, or in the 12?nm range in the Si{sub 3}N{sub 4} matrix, as measured by transmission electron microscopy. Thus, Si{sub 3}N{sub 4} matrix hosts Ge QDs at higher density and more closely spaced than SiO{sub 2} matrix. Raman spectroscopy revealed a higher threshold for amorphous-to-crystalline transition for Ge QDs embedded in Si{sub 3}N{sub 4} matrix in comparison with those in the SiO{sub 2} host. Light absorption by Ge QDs is shown to be more effective in Si{sub 3}N{sub 4} matrix, due to the optical bandgap (0.91.6?eV) being lower than in SiO{sub 2} matrix (1.22.2?eV). Significant photoresponse with a large measured internal quantum efficiency has been observed for Ge QDs in Si{sub 3}N{sub 4} matrix when they are used as a sensitive layer in a photodetector device. These data will be presented and discussed, opening new routes for application of Ge QDs in light harvesting devices.

  19. Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts

    SciTech Connect (OSTI)

    Kamioka, J.; Oda, S.; Kodera, T.; Takeda, K.; Obata, T.; Tarucha, S.

    2014-05-28

    The frequency dependence of conductance noise through a gate-defined quantum point contact fabricated on a Si/SiGe modulation doped wafer is characterized. The 1/f{sup 2} noise, which is characteristic of random telegraph noise, is reduced by application of a negative bias on the global top gate to reduce the local gate voltage. Direct leakage from the large global gate voltage also causes random telegraph noise, and therefore, there is a suitable point to operate quantum dot measurement.

  20. Local structure order in Pd??Cu?Si?? liquid

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yue, G. Q.; Iowa State Univ., Ames, IA; Zhang, Y.; Sun, Y.; Shen, B.; Dong, F.; Wang, Z. Y.; Zhang, R. J.; Zheng, Y. X.; Kramer, M. J.; et al

    2015-02-05

    The short-range order (SRO) in Pd??Cu?Si?? liquid was studied by high energy x-ray diffraction and ab initio molecular dynamics (MD) simulations. The calculated pair correlation functions at different temperatures agree well with the experimental results. The partial pair correlation functions from ab intio MD simulations indicate that Si atoms prefer to be uniformly distributed while Cu atoms tend to aggregate. By performing structure analysis using Honeycutt-Andersen index, Voronoi tessellation, and atomic cluster alignment method, we show that the icosahedron and face-centered cubic SRO increase upon cooling. The dominant SRO is the Pd-centered Pd?Si? motif, namely the structure of which motifmoreis similar to the structure of Pd-centered clusters in the Pd?Si? crystal. The study further confirms the existence of trigonal prism capped with three half-octahedra that is reported as a structural unit in Pd-based amorphous alloys. The majority of Cu-centered clusters are icosahedra, suggesting that the presence of Cu is benefit to promote the glass forming ability.less

  1. Electrical properties of ternary Si-C-N ceramics

    SciTech Connect (OSTI)

    Haluschka, C.; Engel, C.; Riedel, R.

    1996-12-31

    Ternary Si-C-N ceramics were derived from silicon containing polymers by thermally induced hybrid processing. These silicon carbonitrides were investigated by impedance spectroscopy depending on the synthesis conditions. The electrical behavior correlates with the solid state reactions and phase transformations, which take place during the processing. It has also been shown that the electrical properties can be controlled in a wide range.

  2. Towards SiC Surface Functionalization: An Ab Initio Study

    SciTech Connect (OSTI)

    Cicero, G; Catellani, A

    2005-01-28

    We present a microscopic model of the interaction and adsorption mechanism of simple organic molecules on SiC surfaces as obtained from ab initio molecular dynamics simulations. Our results open the way to functionalization of silicon carbide, a leading candidate material for bio-compatible devices.

  3. Synthesis and Characterization of Structured Si-Carbon Nanocomposite Anodes

    Broader source: Energy.gov (indexed) [DOE]

    and Functional Polymer Binders | Department of Energy 7_wang_2012_p.pdf (2.21 MB) More Documents & Publications Novel Lithium Ion Anode Structures: Overview of New DOE BATT Anode Projects Synthesis and Characterization of Structured Si-Carbon Nanocomposite Anodes and Functional Polymer Binders Development of High Capacity Anode for Li-ion Batteries

  4. Elastic scattering of /sup 16/O by /sup 28/Si

    SciTech Connect (OSTI)

    Shkolnik, V.; Dehnhard, D.; Franey, M.A.

    1983-08-01

    Differential cross sections were measured in small angular steps at forward angles for the elastic scattering of /sup 16/O from /sup 28/Si, /sup 29/Si, and /sup 30/Si at E/sub lab/ = 60 MeV and from /sup 28/Si at six other incident energies between 45 and 63 MeV. The angular position of a peak in the diffraction pattern at theta/sub c.m./approx. =75/sup 0/ was measured as a function of the incident energy between 55 and 63 MeV in 0.5 MeV steps. Close fits to these angular distributions and those of other authors at energies between 41 and 81 MeV, some spanning the whole angular range up to 180/sup 0/, and the excitation functions at 90/sup 0/ and 180/sup 0/, were obtained in an optical model analysis. A consistent description of the data was found by the use of a surface-transparent and parity-dependent potential with a real part able to generate a pocket in the total potential. The real and imaginary strengths depend quite strongly and smoothly on the incident energy. This potential shows a transition from surface transparency to strong absorption as E/sub lab/ approaches 81 MeV. The ambiguities in the strengths of the potential are discussed. The broad dispersive potential resonances which are present in several partial waves at every energy are also discussed and their relative importance is examined.

  5. Combined wet and dry cleaning of SiGe(001)

    SciTech Connect (OSTI)

    Park, Sang Wook; Kaufman-Osborn, Tobin; Kim, Hyonwoong; Siddiqui, Shariq; Sahu, Bhagawan; Yoshida, Naomi; Brandt, Adam; Kummel, Andrew C.

    2015-07-15

    Combined wet and dry cleaning via hydrofluoric acid (HF) and atomic hydrogen on Si{sub 0.6}Ge{sub 0.4}(001) surface was studied at the atomic level using ultrahigh vacuum scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and x-ray photoelectron spectroscopy to understand the chemical transformations of the surface. Aqueous HF removes native oxide, but residual carbon and oxygen are still observed on Si{sub 0.6}Ge{sub 0.4}(001) due to hydrocarbon contamination from post HF exposure to ambient. The oxygen contamination can be eliminated by shielding the sample from ambient via covering the sample in the HF cleaning solution until the sample is introduced to the vacuum chamber or by transferring the sample in an inert environment; however, both processes still leave carbon contaminant. Dry in-situ atomic hydrogen cleaning above 330 °C removes the carbon contamination on the surface consistent with a thermally activated atomic hydrogen reaction with surface hydrocarbon. A postdeposition anneal at 550 °C induces formation of an atomically flat and ordered SiGe surface observed by STM. STS verifies that the wet and dry cleaned surface has an unpinned Fermi level with no states between the conduction and valence band edge comparable to sputter cleaned SiGe surfaces.

  6. Long-term stable water vapor permeation barrier properties of SiN/SiCN/SiN nanolaminated multilayers grown by plasma-enhanced chemical vapor deposition at extremely low pressures

    SciTech Connect (OSTI)

    Choi, Bum Ho Lee, Jong Ho

    2014-08-04

    We investigated the water vapor permeation barrier properties of 30-nm-thick SiN/SiCN/SiN nanolaminated multilayer structures grown by plasma enhanced chemical vapor deposition at 7 mTorr. The derived water vapor transmission rate was 1.12 × 10{sup −6} g/(m{sup 2} day) at 85 °C and 85% relative humidity, and this value was maintained up to 15 000 h of aging time. The X-ray diffraction patterns revealed that the nanolaminated film was composed of an amorphous phase. A mixed phase was observed upon performing high resolution transmission electron microscope analysis, which indicated that a thermodynamically stable structure was formed. It was revealed amorphous SiN/SiCN/SiN multilayer structures that are free from intermixed interface defects effectively block water vapor permeation into active layer.

  7. Resorption Rate Tunable Bioceramic: Si, Zn-Modified Tricalcium Phosphate

    SciTech Connect (OSTI)

    Xiang Wei

    2006-08-09

    This dissertation is organized in an alternate format. Several manuscripts which have already been published or are to be submitted for publication have been included as separate chapters. Chapter 1 is a general introduction which describes the dissertation organization and introduces the human bone and ceramic materials as bone substitute. Chapter 2 is the background and literature review on dissolution behavior of calcium phosphate, and discussion of motivation for this research. Chapter 3 is a manuscript entitled ''Si,Zn-modified tricalcium phosphate: a phase composition and crystal structure study'', which was published in ''Key Engineering Materials'' [1]. Chapter 4 gives more crystal structure details by neutron powder diffraction, which identifies the position for Si and Zn substitution and explains the stabilization mechanism of the structure. A manuscript entitled ''Crystal structure analysis of Si, Zn-modified Tricalcium phosphate by Neutron Powder Diffraction'' will be submitted to Biomaterials [2]. Chapter 5 is a manuscript, entitled ''Dissolution behavior and cytotoxicity test of Si, Zn-modified tricalcium phosphate'', which is to be submitted to Biomaterials [3]. This paper discusses the additives effect on the dissolution behavior of TCP, and cytotoxicity test result is also included. Chapter 6 is the study of hydrolysis process of {alpha}-tricalcium phosphate in the simulated body fluid, and the phase development during drying process is discussed. A manuscript entitled ''Hydrolysis of {alpha}-tricalcium phosphate in simulated body fluid and phase transformation during drying process'' is to be submitted to Biomaterials [4]. Ozan Ugurlu is included as co-authors in these two papers due to his TEM contributions. Appendix A is the general introduction of the materials synthesis, crystal structure and preliminary dissolution result. A manuscript entitled ''Resorption rate tunable bioceramic: Si and Zn-modified tricalcium phosphate'' was published in

  8. Research on the Hydrogen Passivation of Defects and Impurities in Si Relevant to Crystalline Si Solar Cell Materials: Final Report, 16 February 2000 -- 15 April 2003

    SciTech Connect (OSTI)

    Stavola, M.

    2003-09-01

    The goal of this experimental research program is to increase the understanding, at a microscopic level, of hydrogenation processes and passivation mechanisms for crystalline-Si photovoltaics. In our experiments, vibrational spectroscopy was used to study the properties of the interstitial H2 molecule in Si and the transition-metal-hydrogen complexes in Si. The interstitial H2 molecule is formed readily in Si when hydrogen is introduced. Our studies establish that interstitial H2 in Si behaves as a nearly free rotator, solving puzzles about the behavior of this defect that have persisted since the discovery of its vibrational spectrum. The transition metals are common impurities in Si that decrease the minority-carrier lifetime and degrade the efficiencies of solar cells. Therefore, the possibility that transition-metal impurities in Si might be passivated by hydrogen has long been of interest. Our studies of transition-metal-H complexes in Si help to establish the structural and electrical properties of a family of Pt-H complexes in Si, and have made the Pt-H complexes a model system for understanding the interaction of hydrogen with transition-metal impurities in Si.

  9. Comparative life-cycle energy payback analysis of multi-junction a-SiGe and nanocrystalline/a-Si modules

    SciTech Connect (OSTI)

    Fthenakis, V.; Kim, H.

    2010-07-15

    Despite the publicity of nanotechnologies in high tech industries including the photovoltaic sector, their life-cycle energy use and related environmental impacts are understood only to a limited degree as their production is mostly immature. We investigated the life-cycle energy implications of amorphous silicon (a-Si) PV designs using a nanocrystalline silicon (nc-Si) bottom layer in the context of a comparative, prospective life-cycle analysis framework. Three R and D options using nc-Si bottom layer were evaluated and compared to the current triple-junction a-Si design, i.e., a-Si/a-SiGe/a-SiGe. The life-cycle energy demand to deposit nc-Si was estimated from parametric analyses of film thickness, deposition rate, precursor gas usage, and power for generating gas plasma. We found that extended deposition time and increased gas usages associated to the relatively high thickness of nc-Si lead to a larger primary energy demand for the nc-Si bottom layer designs, than the current triple-junction a-Si. Assuming an 8% conversion efficiency, the energy payback time of those R and D designs will be 0.7-0.9 years, close to that of currently commercial triple-junction a-Si design, 0.8 years. Future scenario analyses show that if nc-Si film is deposited at a higher rate (i.e., 2-3 nm/s), and at the same time the conversion efficiency reaches 10%, the energy-payback time could drop by 30%.

  10. Formation of quantum spin Hall state on Si surface and energy...

    Office of Scientific and Technical Information (OSTI)

    Si surface and energy gap scaling with strength of spin orbit coupling Title: Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit ...

  11. Chemical reactivity of CVC and CVD SiC with UO2 at high temperatures

    SciTech Connect (OSTI)

    Silva, Chinthaka M; Katoh, Yutai; Voit, Stewart L; Snead, Lance Lewis

    2015-01-01

    Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300 C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity, according to microstructural investigations. However, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500 C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500 C. Furthermore, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.

  12. PID Failure of c-Si and Thin-Film Modules and Possible Correlation...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PID Failure of c-Si and Thin-Film Modules and Possible Correlation with Leakage Currents PID Failure of c-Si and Thin-Film Modules and Possible Correlation with Leakage Currents ...

  13. Investigation of the physical properties of the tetragonal CeMAl4Si2...

    Office of Scientific and Technical Information (OSTI)

    the tetragonal CeMAl4Si2 (M Rh, Ir, Pt) compounds Prev Next Title: Investigation of the physical properties of the tetragonal CeMAl4Si2 (M Rh, Ir, Pt) compounds The ...

  14. Valence electronenergy-lossspectroscopystudyofZrSiO4 and ZrO2...

    Office of Scientific and Technical Information (OSTI)

    electronenergy-lossspectroscopystudyofZrSiO4 and ZrO2 ZrSiO4 (zircon) and m-ZrO2 (zirconia) are fundamental and industrially important materials.This work reports the detailed...

  15. Sensitivities of I-V Parameters in C-Si PV Modules of Hygrothermal...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Sensitivities of I-V Parameters in C-Si PV Modules of Hygrothermal Stress Sensitivities of I-V Parameters in C-Si PV Modules of Hygrothermal Stress Presented at the PV Module ...

  16. Fuel Consumption and NOx Trade-offs on a Port-Fuel-Injected SI...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Consumption and NOx Trade-offs on a Port-Fuel-Injected SI Gasoline Engine Equipped with a Lean-NOx Trap Fuel Consumption and NOx Trade-offs on a Port-Fuel-Injected SI Gasoline ...

  17. Single-Step Non-Thermal Plasma Synthesis of 3C-SiC Nanoparticles...

    Office of Scientific and Technical Information (OSTI)

    Single-Step Non-Thermal Plasma Synthesis of 3C-SiC Nanoparticles Citation Details In-Document Search Title: Single-Step Non-Thermal Plasma Synthesis of 3C-SiC Nanoparticles ...

  18. Development of Solar Grade Silicon (SoG-Si) Feedstock by Recycling SoG-Si Wastes

    SciTech Connect (OSTI)

    Lifeng Zhang; Anping Dong; Lucas Nana Wiredu Damoah

    2013-01-24

    Experiment results of EM separation show that the non-metallic inclusions were successfully pushed to the boundary layer of the crucible under EM force. Larger frequency and smaller current generate smaller thickness of accumulated inclusions. More detailed EM separation experiments are undergoing to investigate the factors that affect the removal efficient of inclusions from SoG-Si

  19. Ag Out-surface Diffusion In Crystalline SiC With An Effective SiO2 Diffusion Barrier

    SciTech Connect (OSTI)

    Xue, H.; Xiao, Haiyan Y.; Zhu, Zihua; Shutthanandan, V.; Snead, Lance L.; Boatner, Lynn A.; Weber, William J.; Zhang, Y.

    2015-09-01

    For applications of tristructural isotropic (TRISO) fuel particles in high temperature reactors, release of radioactive Ag isotope (110mAg) through the SiC coating layer is a safety concern. To understand the diffusion mechanism, Ag ion implantations near the surface and in the bulk were performed by utilizing different ion energies and energy-degrader foils. High temperature annealing was carried out on the as-irradiated samples to study the possible out-surface diffusion. Before and after annealing, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) measurements were employed to obtain the elemental profiles of the implanted samples. The results suggest little migration of buried Ag in the bulk, and an out-diffusion of the implanted Ag in the near-surface region of single crystal SiC. It is also found that a SiO2 layer, which was formed during annealing, may serve as an effective barrier to reduce or prevent Ag out diffusion through the SiC coating layer.

  20. Light-emitting Si nanostructures formed in SiO{sub 2} on irradiation with swift heavy ions

    SciTech Connect (OSTI)

    Kachurin, G. A. Cherkova, S. G.; Skuratov, V. A.; Marin, D. V.; Cherkov, A. G.

    2010-04-15

    SiO{sub 2} layers containing implanted excess Si are irradiated with Xe ions with an energy of 130 MeV and doses of 3 x 10{sup 12}-10{sup 14} cm{sup -2}. In the samples irradiated with a dose of 3 x 10{sup 12} cm{sup -2}, {approx}10{sup 12} cm{sup -2} segregated clusters 3-4 nm in dimension are detected by transmission electron microscopy. With increasing dose, the dimensions and number of these clusters increase. In the photoluminescence spectrum, a 660- to 680-nm band is observed, with the intensity dependent on the dose. After passivation of the sample with hydrogen at 500 deg. C, the band disappears, but a new {approx}780-nm band typical of Si nanocrystals becomes evident. On the basis of the entire set of data, it is concluded that the 660- to 680-nm band is associated with imperfect Si nanocrystals grown in the tracks of Xe ions due to high ionization losses. The nonmonotonic dependence of the photoluminescence intensity on the dose is attributed to the difference between the diameters of tracks and the diameters of the displacements' cascades responsible for defect formation.

  1. Modeling the Transverse Thermal Conductivity of 2-D SiCf/SiC Composites Made with Woven Fabric

    SciTech Connect (OSTI)

    Youngblood, Gerald E.; Senor, David J.; Jones, Russell H.

    2004-06-30

    The hierarchical two-layer (H2L) model was developed to describe the effective transverse thermal conductivity, Keff, of a 2D-SiCf/SiC composite made from stacked and infiltrated woven fabric layers in terms of constituent properties and microstructural and architectural variables. The H2L model includes the expected effects of fiber-matrix interfacial conductance as well as the effects of high fiber packing fractions within individual tows and the non-uniform nature of 2D-fabric layers that usually include a significant amount of interlayer porosity. Previously, H2L model predictions were compared to measured values of Keff for two versions of DuPont 2D-Hi NicalonÔ/PyC/ICVI-SiC composite, one with a “thin” (0.110 μm) and the other with a “thick” (1.040 μm) pyrocarbon (PyC) fiber coating, and for a 2D-TyrannoÔ SA/”thin” PyC/FCVI-SIC composite made by ORNL. In this study, H2L model predictions are compared to measured Keff-values for a 2D-SiCf/SiC composite made by GE Power Systems (formerly DuPont Lanxide) using the ICVI-process with Hi-NicalonÔ type S fabric. The values of Keff determined for the composite made with the Hi-NicalonÔ type S fabric were significantly greater than Keff-values determined for the composites made with either the Hi-NicalonÔor the TyrannoÔ SA fabrics. Differences in Keff-values were expected for using different fiber types, but major differences also were due to observed microstructural variations between the systems, and as predicted by the H2L model.

  2. Optical characterizations of doped silicon nanocrystals grown by co-implantation of Si and dopants in SiO₂

    SciTech Connect (OSTI)

    Frégnaux, M.; Khelifi, R.; Muller, D.; Mathiot, D.

    2014-10-14

    Co-implantation, with overlapping implantation projected ranges, of Si and doping species (P, As, and B) followed by a thermal annealing step is a viable route to form doped Si nanocrystals (NCs) embedded in silica (SiO₂). In this paper, we investigate optical characterizations of both doped and un-doped Si-NCs prepared by this method. The effective NC presence in the oxide layer and their crystallinity is verified by Raman spectrometry. Photoluminescence (PL) and PL excitation measurements reveal quantum confinement effects and a gradual PL quenching with increasing dopant concentrations. In un-doped NC, the measured Stokes shift remains constant and its value ~0.2 eV is almost twice the Si–O vibration energy. This suggests that a possible radiative recombination path is a fundamental transition assisted by a local phonon. PL lifetime investigations show that PL time-decays follow a stretched exponential. Using a statistical model for luminescence quenching, a typical NC diameter close to 2 nm is obtained for As- and P-doped samples, consistent with our previous atomic probe tomography (APT) analyses. APT also demonstrated that n-type dopant (P and As) are efficiently introduced in the NC core, whereas p-type dopant (B) are located at the NC/SiO₂ interface. This last observation could explain the failure of the luminescence-quenching model to determine NC size in B-doped samples. All together, these experimental observations question on possible different carrier recombination paths in P or As doped NC compared to B one's.

  3. Inhibitive formation of nanocavities by introduction of Si atoms in Ge nanocrystals produced by ion implantation

    SciTech Connect (OSTI)

    Cai, R. S.; Shang, L.; Liu, X. H.; Zhang, Y. J.; Wang, Y. Q. E-mail: barba@emt.inrs.ca; Ross, G. G.; Barba, D. E-mail: barba@emt.inrs.ca

    2014-05-28

    Germanium nanocrystals (Ge-nc) were successfully synthesized by co-implantation of Si and Ge ions into a SiO{sub 2} film thermally grown on (100) Si substrate and fused silica (pure SiO{sub 2}), respectively, followed by subsequent annealing at 1150 °C for 1 h. Transmission electron microscopy (TEM) examinations show that nanocavities only exist in the fused silica sample but not in the SiO{sub 2} film on a Si substrate. From the analysis of the high-resolution TEM images and electron energy-loss spectroscopy spectra, it is revealed that the absence of nanocavities in the SiO{sub 2} film/Si substrate is attributed to the presence of Si atoms inside the formed Ge-nc. Because the energy of Si-Ge bonds (301 kJ·mol{sup −1}) are greater than that of Ge-Ge bonds (264 kJ·mol{sup −1}), the introduction of the Si-Ge bonds inside the Ge-nc can inhibit the diffusion of Ge from the Ge-nc during the annealing process. However, for the fused silica sample, no crystalline Si-Ge bonds are detected within the Ge-nc, where strong Ge outdiffusion effects produce a great number of nanocavities. Our results can shed light on the formation mechanism of nanocavities and provide a good way to avoid nanocavities during the process of ion implantation.

  4. Modeling and Testing Miniature Torsion Specimens for SiC Joining Development Studies for Fusion

    SciTech Connect (OSTI)

    Henager, Charles H.; Nguyen, Ba Nghiep; Kurtz, Richard J.; Roosendaal, Timothy J.; Borlaug, Brennan A.; Ferraris, Monica; Ventrella, Andrea; Katoh, Yutai

    2015-08-19

    The international fusion community has designed a miniature torsion specimen for neutron irradiation studies of joined SiC and SiC/SiC composite materials. Miniature torsion joints based on this specimen design were fabricated using displacement reactions between Si and TiC to produce Ti3SiC2 + SiC joints with CVD-SiC and tested in torsion-shear prior to and after neutron irradiation. However, many of these miniature torsion specimens fail out-of-plane within the CVD-SiC specimen body, which makes it problematic to assign a shear strength value to the joints and makes it difficult to compare unirradiated and irradiated joint strengths to determine the effects of the irradiation. Finite element elastic damage and elastic-plastic damage models of miniature torsion joints are developed that indicate shear fracture is likely to occur within the body of the joined sample and cause out-of-plane failures for miniature torsion specimens when a certain modulus and strength ratio between the joint material and the joined material exists. The model results are compared and discussed with regard to unirradiated and irradiated joint test data for a variety of joint materials. The unirradiated data includes Ti3SiC2 + SiC/CVD-SiC joints with tailored joint moduli, and includes steel/epoxy and CVD-SiC/epoxy joints. The implications for joint data based on this sample design are discussed.

  5. Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers

    SciTech Connect (OSTI)

    Kurosawa, Masashi; Kato, Motohiro; Yamaha, Takashi; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki

    2015-04-27

    High-Sn-content SiSn alloys are strongly desired for the next-generation near-infrared optoelectronics. A polycrystalline growth study has been conducted on amorphous SiSn layers with a Sn-content of 2%30% deposited on either a substrate of SiO{sub 2} or SiN. Incorporating 30% Sn into Si permits the crystallization of the amorphous layers at annealing temperatures below the melting point of Sn (231.9?C). Composition analyses indicate that approximately 20% of the Sn atoms are substituted into the Si lattice after solid-phase crystallization at 150220?C for 5?h. Correspondingly, the optical absorption edge is red-shifted from 1.12?eV (Si) to 0.83?eV (Si{sub 1?x}Sn{sub x} (x???0.18??0.04)), and the difference between the indirect and direct band gap is significantly reduced from 3.1?eV (Si) to 0.22?eV (Si{sub 1?x}Sn{sub x} (x???0.18??0.04)). These results suggest that with higher substitutional Sn content the SiSn alloys could become a direct band-gap material, which would provide benefits for Si photonics.

  6. Electronic properties of III-nitride semiconductors: A first-principles investigation using the Tran-Blaha modified Becke-Johnson potential

    SciTech Connect (OSTI)

    Araujo, Rafael B. Almeida, J. S. de Ferreira da Silva, A.

    2013-11-14

    In this work, we use density functional theory to investigate the influence of semilocal exchange and correlation effects on the electronic properties of III-nitride semiconductors considering zinc-blende and wurtzite crystal structures. We find that the inclusion of such effects through the use of the Tran-Blaha modified Becke-Johnson potential yields an excellent description of the electronic structures of these materials giving energy band gaps which are systematically larger than the ones obtained with standard functionals such as the generalized gradient approximation. The discrepancy between the experimental and theoretical band gaps is then significantly reduced with semilocal exchange and correlation effects. However, the effective masses are overestimated in the zinc-blende nitrides, but no systematic trend is found in the wurtzite compounds. New results for energy band gaps and effective masses of zinc-blende and wurtzite indium nitrides are presented.

  7. SiO{sub 2}/SiC structures annealed in D{sub 2}{sup 18}O: Compositional and electrical effects

    SciTech Connect (OSTI)

    Pitthan, E. Corra, S. A.; Soares, G. V.; Boudinov, H. I.; Stedile, F. C.

    2014-03-17

    Effects of water vapor annealing on SiO{sub 2}/4H-SiC structures formed following different routes were investigated using water isotopically enriched in {sup 18}O and {sup 2}H (D). Isotopic exchange between oxygen from the water vapor and oxygen from SiO{sub 2} films deposited on 4H-SiC was observed in the whole depth of the films, differently from the behavior of SiO{sub 2} films thermally grown on 4H-SiC. The highest amount of D was obtained in the sample with the highest negative fixed charge concentration, suggesting that the D incorporation occurs in defects in the structure that exist prior to the annealing. As a consequence of the water annealing, a significant reduction in the negative effective charge in metal-oxide-semiconductor capacitors and the removal of the SiO{sub 2}/SiC interfacial region was observed, attributed to the reduction of the amount of SiO{sub x}C{sub y} compounds in the interfacial region.

  8. Fe-implanted 6H-SiC: Direct evidence of Fe{sub 3}Si nanoparticles observed by atom probe tomography and {sup 57}Fe Mssbauer spectroscopy

    SciTech Connect (OSTI)

    Diallo, M. L.; Fnidiki, A. Lard, R.; Cuvilly, F.; Blum, I.; Lechevallier, L.; Debelle, A.; Thom, L.; Viret, M.; Marteau, M.; Eyidi, D.; Declmy, A.

    2015-05-14

    In order to understand ferromagnetic ordering in SiC-based diluted magnetic semiconductors, Fe-implanted 6H-SiC subsequently annealed was studied by Atom Probe Tomography, {sup 57}Fe Mssbauer spectroscopy and SQUID magnetometry. Thanks to its 3D imaging capabilities at the atomic scale, Atom Probe Tomography appears as the most suitable technique to investigate the Fe distribution in the 6H-SiC host semiconductor and to evidence secondary phases. This study definitely evidences the formation of Fe{sub 3}Si nano-sized clusters after annealing. These clusters are unambiguously responsible for the main part of the magnetic properties observed in the annealed samples.

  9. Scale Up of Si/Si0.8GE0.2 and B4C/B9C Superlattices for Harvesting of Waste

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Heat in Diesel Engines | Department of Energy Scale Up of Si/Si0.8GE0.2 and B4C/B9C Superlattices for Harvesting of Waste Heat in Diesel Engines Scale Up of Si/Si0.8GE0.2 and B4C/B9C Superlattices for Harvesting of Waste Heat in Diesel Engines 2003 DEER Conference Presentation: Pacific Northwest National Laboratory 2003_deer_martin.pdf (1.44 MB) More Documents & Publications Quantum Well Thermoelectrics and Waste Heat Recovery Multilayer Thin-Film Thermoelectric Materials for Vehicle

  10. A reevaluation of the assignment of the vibrational fundamentals and the rotational analysis of bands in the high-resolution infrared spectra of trans- and cis- 1,3,5-hexatriene

    SciTech Connect (OSTI)

    Craig, Norman C.; Leyden, Matthew C.; Moore, Michael C.; Patchen, Amie K.; van den Heuvel, Titus; Blake, Thomas A.; Masiello, Tony; Sams, Robert L.

    2010-07-01

    Assignments of the vibrational fundamentals of cis- and trans-1,3,5-hexatriene are reevaluated with new infrared and Raman spectra and with quantum chemical predictions of intensities and anharmonic frequencies. The rotational structure is analyzed in the high-resolution (0.0013-0.0018 cm -1) infrared spectra of three C-type bands of the trans isomer and two C-type bands of the cis isomer. The bands for the trans isomer are at 1010.96 cm-1 (v14), 900.908 cm-1 (v16), and 683.46 cm-1 (v17). Ground state (GS) rotational constants have been fitted to the combined ground state combination differences (GSCDs) for the three bands of the trans isomer. The bands for the cis isomer are at 907.70 cm-1 (v33) and 587.89 cm-1 (v35). GS rotational constants have been fitted to the combined GSCDs for the two bands of the cis isomer and compared with those obtained from microwave spectroscopy. Small inertial defects in the GSs confirm that both molecules are planar. Upper state rotational constants were fitted for all five bands.

  11. Anisotropy of heat conduction in Mo/Si multilayers

    SciTech Connect (OSTI)

    Medvedev, V. V.; Yakshin, A. E.; Kruijs, R. W. E. van de; Bijkerk, F.; Yang, J.; Schmidt, A. J.; Zoethout, E.

    2015-08-28

    This paper reports on the studies of anisotropic heat conduction phenomena in Mo/Si multilayers with individual layer thicknesses selected to be smaller than the mean free path of heat carriers. We applied the frequency-domain thermoreflectance technique to characterize the thermal conductivity tensor. While the mechanisms of the cross-plane heat conduction were studied in detail previously, here we focus on the in-plane heat conduction. To analyze the relative contribution of electron transport to the in-plane heat conduction, we applied sheet-resistance measurements. Results of Mo/Si multilayers with variable thickness of the Mo layers indicate that the net in-plane thermal conductivity depends on the microstructure of the Mo layers.

  12. The SiC Direct Target Prototype for SPES

    SciTech Connect (OSTI)

    Rizzi, V.; Andrighetto, A.; Barbui, M.; Carturan, S.; Cinausero, M.; Giacchini, M.; Gramegna, F.; Lollo, M.; Maggioni, G.; Prete, G.; Tonezzer, M.; Antonucci, C.; Cevolani, S.; Petrovich, C.; Biasetto, L.; Colombo, P.; Manzolaro, M.; Meneghetti, M.; Celona, L.; Chines, F.

    2007-10-26

    A R and D study for the realization of a Direct Target is in progress within the SPES project for RIBs production at the Laboratori Nazionali of Legnaro. A proton beam (40 MeV energy, 0.2 mA current) is supposed to impinge directly on a UCx multiple thin disks target, the power released by the proton beam is dissipated mainly through irradiation. A SiC target prototype with a 1:5 scale has been developed and tested. Thermal, mechanical and release calculations have been performed to fully characterize the prototype. An online test has been performed at the HRIBF facility of the Oak Ridge National Laboratory (ORNL), showing that our SiC target can sustain a proton beam current considerably higher than the maximum beam current used with the standard HRIBF target configuration.

  13. Crystal structure of laser-induced subsurface modifications in Si

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Verburg, P. C.; Smillie, L. A.; Römer, G. R. B. E.; Haberl, B.; Bradby, J. E.; Williams, J. S.; Huis in ’t Veld, A. J.

    2015-06-04

    Laser-induced subsurface modification of dielectric materials is a well-known technology. Applications include the production of optical components and selective etching. In addition to dielectric materials, the subsurface modification technology can be applied to silicon, by employing near to mid-infrared radiation. An application of subsurface modifications in silicon is laser-induced subsurface separation, which is a method to separate wafers into individual dies. Other applications for which proofs of concept exist are the formation of waveguides and resistivity tuning. However, limited knowledge is available about the crystal structure of subsurface modifications in silicon. In this paper, we investigate the geometry and crystalmore » structure of laser-induced subsurface modifications in monocrystalline silicon wafers. Finally, in addition to the generation of lattice defects, we found that transformations to amorphous silicon and Si-iii/Si-xii occur as a result of the laser irradiation.« less

  14. Crystal structure of laser-induced subsurface modifications in Si

    SciTech Connect (OSTI)

    Verburg, P. C.; Smillie, L. A.; Römer, G. R. B. E.; Haberl, B.; Bradby, J. E.; Williams, J. S.; Huis in ’t Veld, A. J.

    2015-06-04

    Laser-induced subsurface modification of dielectric materials is a well-known technology. Applications include the production of optical components and selective etching. In addition to dielectric materials, the subsurface modification technology can be applied to silicon, by employing near to mid-infrared radiation. An application of subsurface modifications in silicon is laser-induced subsurface separation, which is a method to separate wafers into individual dies. Other applications for which proofs of concept exist are the formation of waveguides and resistivity tuning. However, limited knowledge is available about the crystal structure of subsurface modifications in silicon. In this paper, we investigate the geometry and crystal structure of laser-induced subsurface modifications in monocrystalline silicon wafers. Finally, in addition to the generation of lattice defects, we found that transformations to amorphous silicon and Si-iii/Si-xii occur as a result of the laser irradiation.

  15. Forsterite film formation and grain growth in 3% Si steel

    SciTech Connect (OSTI)

    Cunha, M.A.; Cesar, M.G.M.M. )

    1994-11-01

    The forsterite film in 3% Si steel is formed by a solid state reaction of the annealing separator, MgO, with SiO[sub 2] that results from the reduction of the fayalite layer in the hydrogen atmosphere in the high temperature anneal. In this work, secondary recrystallization was about complete at 1,000 C. After that temperature tertiary recrystallization can occur if the boundary drag of the second phase particles can be overcome. Addition of phosphates to the annealing separator affects the morphology of the forsterite film and can have an important effect on tertiary recrystallization by affecting the rate of decrease of the boundary-drag and/or the surface energy relationship.

  16. On the state of Mn impurity implanted in Si

    SciTech Connect (OSTI)

    Orlov, A. F.; Bublik, V. T.; Vdovin, V. I.; Agafonov, Yu. A.; Balagurov, L. A.; Zinenko, V. I.; Kulemanov, I. V.; Shcherbachev, K. D.

    2009-07-15

    The state of manganese impurity in implanted silicon at implantation doses of up to 5 x 10{sup 16} cm{sup -2} has been investigated by X-ray diffraction and transmission electron microscopy. It is established that, after short-term vacuum annealing at 850{sup o}C, most of the implanted manganese impurities are in microinclusions up to 20 nm in size formed by a tetragonal silicide phase of the Mn{sub 15}Si{sub 26} type.

  17. High quality SiC microdisk resonators fabricated from monolithic epilayer wafers

    SciTech Connect (OSTI)

    Magyar, Andrew P.; Bracher, David; Lee, Jonathan C.; Hu, Evelyn L.; Aharonovich, Igor

    2014-02-03

    The exquisite mechanical properties of SiC have made it an important industrial material with applications in microelectromechanical devices and high power electronics. Recently, the optical properties of SiC have garnered attention for applications in photonics, quantum information, and spintronics. This work demonstrates the fabrication of microdisks formed from a p-N SiC epilayer material. The microdisk cavities fabricated from the SiC epilayer material exhibit quality factors of as high as 9200 and the approach is easily adaptable to the fabrication of SiC-based photonic crystals and other photonic and optomechanical devices.

  18. Implementation of Tunneling Passivated Contacts into Industrially Relevant n-Cz Si Solar Cells

    SciTech Connect (OSTI)

    Nemeth, William; LaSalvia, Vincenzo; Page, Matthew R.; Warren, Emily L.; Dameron, Arrelaine; Norman, Andrew G.; Lee, Benjamin G.; Young, David L.; Stradins, Paul

    2015-06-14

    We identify bottlenecks, and propose solutions, to implement a B-diffused front emitter and a backside pc-Si/SiO2 pasivated tunneling contact into high efficiency n-Cz Si cells in an industrially relevant way. We apply an O-precipitate dissolution treatment to make n-Cz wafers immune to bulk lifetime process degradation, enabling robust, passivated B front emitters with J0 <; 20fA/cm2. Adding ultralow recombination n+ pc-Si/SiO2 back contacts enables pre-metallized cells with iVoc=720 mV and J0=8.6 fA/cm2. However, metallization significantly degrades performance of these contacts due to pinholes and possibly, grain boundary diffusion of primary metal and source contaminates such as Cu. An intermediate, doped a-Si:H capping layer is found to significantly block the harmful metal penetration into pc-Si.

  19. The location and doping effect of boron in Si nanocrystals embedded silicon oxide film

    SciTech Connect (OSTI)

    Xie, Min; Li, Dongsheng; Chen, Le; Wang, Feng; Zhu, Xiaodong; Yang, Deren

    2013-03-25

    Electrically activated doping of boron (B) atoms into the Si-nanocrystals (Si-NCs) embedded silicon oxide film is achieved by co-sputtering technique following with the annealing treatment. The evolution of the size, the shape, and the density of Si-NCs with the doping of B atoms is investigated. The observation of x-ray photoelectron spectroscopy of Si 2p and B 1s and the decrease in lattice spacing of Si (111) plane suggest that B atoms are doped into Si-NCs. The activated doping is confirmed by the Fano effect of the micro-Raman spectra for Si-NCs and the drastic decrease of the sheet resistance.

  20. Si Passivation and Chemical Vapor Deposition of Silicon Nitride: Final Technical Report, March 18, 2007

    SciTech Connect (OSTI)

    Atwater, H. A.

    2007-11-01

    This report investigated chemical and physical methods for Si surface passivation for application in crystalline Si and thin Si film photovoltaic devices. Overall, our efforts during the project were focused in three areas: i) synthesis of silicon nitride thin films with high hydrogen content by hot-wire chemical vapor deposition; ii) investigation of the role of hydrogen passivation of defects in crystalline Si and Si solar cells by out diffusion from hydrogenated silicon nitride films; iii) investigation of the growth kinetics and passivation of hydrogenated polycrystalline. Silicon nitride films were grown by hot-wire chemical vapor deposition and film properties have been characterized as a function of SiH4/NH3 flow ratio. It was demonstrated that hot-wire chemical vapor deposition leads to growth of SiNx films with controllable stoichiometry and hydrogen.

  1. Stress influenced trapping processes in Si based multi-quantum well structures and heavy ions implanted Si

    SciTech Connect (OSTI)

    Ciurea, Magdalena Lidia Lazanu, Sorina

    2014-10-06

    Multi-quantum well structures and Si wafers implanted with heavy iodine and bismuth ions are studied in order to evaluate the influence of stress on the parameters of trapping centers. The experimental method of thermostimullatedcurrents without applied bias is used, and the trapping centers are filled by illumination. By modeling the discharge curves, we found in multilayered structures the parameters of both 'normal' traps and 'stress-induced' ones, the last having a Gaussian-shaped temperature dependence of the cross section. The stress field due to the presence of stopped heavy ions implanted into Si was modeled by a permanent electric field. The increase of the strain from the neighborhood of I ions to the neighborhood of Bi ions produces the broadening of some energy levels and also a temperature dependence of the cross sections for all levels.

  2. Ion beam synthesis of SiGe alloy layers

    SciTech Connect (OSTI)

    Im, Seongil

    1994-05-01

    Procedures required for minimizing structural defects generated during ion beam synthesis of SiGe alloy layers were studied. Synthesis of 200 mm SiGe alloy layers by implantation of 120-keV Ge ions into <100> oriented Si wafers yielded various Ge peak concentrations after the following doses, 2{times}10{sup 16}cm{sup {minus}2}, 3{times}10{sup 16}cm{sup {minus}2} (mid), and 5{times}10{sup 16}cm{sup {minus}2} (high). Following implantation, solid phase epitaxial (SPE) annealing in ambient N2 at 800C for 1 hr. resulted in only slight redistribution of the Ge. Two kinds of extended defects were observed in alloy layers over 3{times}l0{sup 16}cm{sup {minus}2}cm dose at room temperature (RT): end-of-range (EOR) dislocation loops and strain-induced stacking faults. Density of EOR dislocation loops was much lower in alloys produced by 77K implantation than by RT implantation. Decreasing the dose to obtain 5 at% peak Ge concentration prevents strain relaxation, while those SPE layers with more than 7 at% Ge peak show high densities of misfit- induced stacking faults. Sequential implantation of C following high dose Ge implantation (12 at% Ge peak concentration in layer) brought about a remarkable decrease in density of misfit-induced stacking faults. For peak implanted C > 0.55 at%, stacking fault generation in the epitaxial layer was suppressed, owing to strain compensation by C atoms in the SiGe lattice. A SiGe alloy layer with 0.9 at% C peak concentration under a 12 at% Ge peak exhibited the best microstructure. Results indicate that optimum Ge/C ratio for strain compensation is between 11 and 22. The interface between amorphous and regrown phases (a/c interface) had a dramatic morphology change during its migration to the surface. Initial <100> planar interface decomposes into a <111> faceted interface, changing the growth kinetics; this is associated with strain relaxation by stacking fault formation on (111) planes in the a/c interface.

  3. SULFUR ISOTOPIC COMPOSITIONS OF SUBMICROMETER SiC GRAINS FROM THE MURCHISON METEORITE

    SciTech Connect (OSTI)

    Xu, Yuchen; Zinner, Ernst; Gallino, Roberto; Heger, Alexander; Pignatari, Marco; Lin, Yangting

    2015-02-01

    We report C, Si, N, S, Mg-Al, and Ca-Ti isotopic compositions of presolar silicon carbide (SiC) grains from the SiC-rich KJE size fraction (0.5-0.8 μm) of the Murchison meteorite. One thousand one hundred thirteen SiC grains were identified based on their C and Si isotopic ratios. Mainstream, AB, C, X, Y, and Z subtypes of SiC, and X-type silicon nitride (Si{sub 3}N{sub 4}) account for 81.4%, 5.7%, 0.1%, 1.5%, 5.8%, 4.9%, and 0.4%, respectively. Twenty-five grains with unusual Si isotopic ratios, including one C grain, 16 X grains, 1 Y grain, 5 Z grains, and 2 X-type Si{sub 3}N{sub 4} grains were selected for N, S, Mg-Al, and Ca-Ti isotopic analysis. The C grain is highly enriched in {sup 29}Si and {sup 30}Si (δ{sup 29}Si = 1345‰ ± 19‰, δ{sup 30}Si = 1272‰ ± 19‰). It has a huge {sup 32}S excess, larger than any seen before, and larger than that predicted for the Si/S supernova (SN) zone, providing evidence against the elemental fractionation model by Hoppe et al. Two SN models investigated here present a more satisfying explanation in terms of a radiogenic origin of {sup 32}S from the decay of short-lived {sup 32}Si (τ{sub 1/2} = 153 yr). Silicon-32 as well as {sup 29}Si and {sup 30}Si can be produced in SNe by short neutron bursts; evidence for initial {sup 44}Ti (τ{sub 1/2} = 60 yr) in the C grain is additional evidence for an SN origin. The X grains have marginal {sup 32}S excesses, much smaller than expected from their large {sup 28}Si excesses. Similarly, the Y and Z grains do not show the S-isotopic anomalies expected from their large Si isotopic anomalies. Low intrinsic S contents and contamination with isotopically normal S are the most likely explanations.

  4. Development of ASTM Standard for SiC-SiC Joint Testing Final Scientific/Technical Report

    SciTech Connect (OSTI)

    Jacobsen, George; Back, Christina

    2015-10-30

    As the nuclear industry moves to advanced ceramic based materials for cladding and core structural materials for a variety of advanced reactors, new standards and test methods are required for material development and licensing purposes. For example, General Atomics (GA) is actively developing silicon carbide (SiC) based composite cladding (SiC-SiC) for its Energy Multiplier Module (EM2), a high efficiency gas cooled fast reactor. Through DOE funding via the advanced reactor concept program, GA developed a new test method for the nominal joint strength of an endplug sealed to advanced ceramic tubes, Fig. 1-1, at ambient and elevated temperatures called the endplug pushout (EPPO) test. This test utilizes widely available universal mechanical testers coupled with clam shell heaters, and specimen size is relatively small, making it a viable post irradiation test method. The culmination of this effort was a draft of an ASTM test standard that will be submitted for approval to the ASTM C28 ceramic committee. Once the standard has been vetted by the ceramics test community, an industry wide standard methodology to test joined tubular ceramic components will be available for the entire nuclear materials community.

  5. Top-emission Si-based phosphor organic light emitting diode with Au doped ultrathin n-Si film anode and bottom Al mirror

    SciTech Connect (OSTI)

    Li, Y. Z.; Xu, W. J.; Ran, G. Z. [State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Qin, G. G. [State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Key Lab of Semiconductor Materials, CAS, Beijing 100083 (China)

    2009-07-20

    We report a highly efficient top-emission Si-based phosphor organic light emitting diode (PhOLED) with an ultrathin polycrystalline n-Si:Au film anode and a bottom Al mirror. This anode is formed by magnetron sputtering followed by Ni induced crystallization and then Au diffusion. By optimizing the thickness of the n-Si:Au film anode, the Au diffusion temperature, and the other parameters of the PhOLED, the highest current and power efficiencies of the n-Si:Au film anode PhOLED reached 85{+-}9 cd/A and 80{+-}8 lm/W, respectively, corresponding to an external quantum efficiency of 21{+-}2% and a power conversion efficiency of 15{+-}2%, respectively, which are about 60% and 110% higher than those of the indium tin oxide anode counterpart and 70% and 50% higher than those of the bulk n{sup +}-Si:Au anode counterpart, respectively.

  6. Structure determination of the clean (001) surface of strained Si on Si{sub 1−x}Ge{sub x}

    SciTech Connect (OSTI)

    Shirasawa, Tetsuroh; Takeda, Sakura Nishino; Takahashi, Toshio

    2015-02-09

    The surface structure of the strained Si(001) (thickness of 20 nm) on Si{sub 1−x}Ge{sub x} (x = 0.1, 0.2, and 0.3) was studied by low-energy electron diffraction (LEED). LEED intensity-energy spectra of the 2 × 1 reconstructed clean surfaces showed a systematic change that indicates the lattice contraction along the [001] direction remains even at the surfaces. The atomic structures were quantitatively determined, and they were compared with the unstrained pristine Si. The differences in the atomic position almost follow the difference in the bulk lattice constant determined by X-ray diffraction measurements. The results indicate that the strain produced at the Si/Si{sub 1−x}Ge{sub x} interface remains unchanged up to the surface layer.

  7. Transparent conducting Si-codoped Al-doped ZnO thin films prepared by magnetron sputtering using Al-doped ZnO powder targets containing SiC

    SciTech Connect (OSTI)

    Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu

    2009-07-15

    Transparent conducting Al-doped ZnO (AZO) thin films codoped with Si, or Si-codoped AZO (AZO:Si), were prepared by radio-frequency magnetron sputtering using a powder mixture of ZnO, Al{sub 2}O{sub 3}, and SiC as the target; the Si content (Si/[Si+Zn] atomic ratio) was varied from 0 to 1 at. %, but the Al content (Al/[Al+Zn] atomic ratio) was held constant. To investigate the effect of carbon on the electrical properties of AZO:Si thin films prepared using the powder targets containing SiC, the authors also prepared thin films using a mixture of ZnO, Al{sub 2}O{sub 3}, and SiO{sub 2} or SiO powders as the target. They found that when AZO:Si thin films were deposited on glass substrates at about 200 degree sign C, both Al and Si doped into ZnO acted as effective donors and the atomic carbon originating from the sputtered target acted as a reducing agent. As a result, sufficient improvement was obtained in the spatial distribution of resistivity on the substrate surface in AZO:Si thin films prepared with a Si content (Si/[Si+Zn] atomic ratio) of 0.75 at. % using powder targets containing SiC. The improvement in resistivity distribution was mainly attributed to increases in both carrier concentration and Hall mobility at locations on the substrate corresponding to the target erosion region. In addition, the resistivity stability of AZO: Si thin films exposed to air for 30 min at a high temperature was found to improve with increasing Si content.

  8. Porous SiC nanowire arrays as stable photocatalyst for water splitting under UV irradiation

    SciTech Connect (OSTI)

    Liu, Hailong; She, Guangwei; Mu, Lixuan; Shi, Wensheng

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer Arrays of porous SiC nanowires prepared by a facile in situ carbonizing method. Black-Right-Pointing-Pointer Utilizing the SiC nanowire arrays as photocatalysis for water splitting. Black-Right-Pointing-Pointer Excellent photocatalytic performance under the UV irradiation. Black-Right-Pointing-Pointer Very high stability of the SiC nanowire photocatalyst. -- Abstract: In this study, we report the fabrication and photocatalytic properties of the oriented arrays of SiC nanowires on the Si substrate. The SiC nanowire arrays were prepared by carbonizing the Si nanowire arrays with the graphite powder at 1250 Degree-Sign C. The as-prepared SiC nanowires are highly porous, which endows them with a high surface-to-volume ratio. Considering the large surface areas and the high stability, the porous SiC nanowire arrays were used as photocatalyst for water splitting under UV irradiation. It was found that such porous SiC structure exhibited an enhanced and extremely stable photocatalytic performance.

  9. Light absorption and electrical transport in Si:O alloys for photovoltaics

    SciTech Connect (OSTI)

    Mirabella, S.; Crupi, I.; Miritello, M.; Simone, F.; Di Martino, G.; Di Stefano, M. A.; Di Marco, S.; Priolo, F.

    2010-11-15

    Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy deposition, followed by annealing up to 1250 deg. C. Boron implantation (30 keV, 3-30x10{sup 14} B/cm{sup 2}) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was also employed to follow the amorphous-crystalline (a-c) transition of the Si domains contained in the Si:O films. The optical absorption and the electrical transport of Si:O films can be continuously and independently modulated by acting on different parameters. The light absorption increases (by one decade) with the Si content in the 43-100 at. % range, determining an optical band gap which can be continuously modulated into the 2.6-1.6 eV range, respectively. The a-c phase transition in Si:O films, causing a significant reduction in the absorption coefficient, occurs at increasing temperatures (from 600 to 1100 deg. C) as the Si content decreases. The electrical resistivity of Si:O films can be varied among five decades, being essentially dominated by the number of Si grains and by the doping. Si:O alloys with Si content in the 60-90 at. % range (named oxygen rich silicon films), are proved to join an appealing optical gap with a viable conductivity, being a good candidate for increasing the conversion efficiency of thin-film photovoltaic cell.

  10. Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

    SciTech Connect (OSTI)

    Wan, Yimao Yan, Di; Bullock, James; Zhang, Xinyu; Cuevas, Andres

    2015-12-07

    A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiN{sub x}) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiN{sub x} stack, recombination current density J{sub 0} values of 9, 11, 47, and 87 fA/cm{sup 2} are obtained on 10 Ω·cm n-type, 0.8 Ω·cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J{sub 0} on n-type 10 Ω·cm wafers is further reduced to 2.5 ± 0.5 fA/cm{sup 2} when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiN{sub x} stack is thermally stable at 400 °C in N{sub 2} for 60 min on all four c-Si surfaces. Capacitance–voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiN{sub x} stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.

  11. Diamond turning of Si and Ge single crystals

    SciTech Connect (OSTI)

    Blake, P.; Scattergood, R.O.

    1988-12-01

    Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

  12. Application of RTG (SiGe) technology to MESUR

    SciTech Connect (OSTI)

    Vicente, F.A. )

    1993-01-15

    This paper discusses providing electrical power for the Mars Environmental Survey (MESUR) mission. The use of radioisotope thermoelectric generator (RTG) technology using SiGe enables total satisfaction of the mission requirements. This technology permits placing the survey landers at any location on Mars, with the capability of transmitting data directly to Earth. If a relay satellite is deployed, the modular construction of the RTG permits tailoring the power to match that mission configuration. Presented are various configurations and trades directed toward achieving operational status, first with a pathfinder'' mission and subsequently with the full complement of landers.

  13. Oxidation of SiC cladding under Loss of Coolant Accident (LOCA) conditions in LWRs

    SciTech Connect (OSTI)

    Lee, Y.; Yue, C.; Arnold, R. P.; McKrell, T. J.; Kazimi, M. S.

    2012-07-01

    An experimental assessment of Silicon Carbide (SiC) cladding oxidation rate in steam under conditions representative of Loss of Coolant Accidents (LOCA) in light water reactors (LWRs) was conducted. SiC oxidation tests were performed with monolithic alpha phase tubular samples in a vertical quartz tube at a steam temperature of 1140 deg. C and steam velocity range of 1 to 10 m/sec, at atmospheric pressure. Linear weight loss of SiC samples due to boundary layer controlled reaction of silica scale (SiO{sub 2} volatilization) was experimentally observed. The weight loss rate increased with increasing steam flow rate. Over the range of test conditions, SiC oxidation rates were shown to be about 3 orders of magnitude lower than the oxidation rates of zircaloy 4. A SiC volatilization correlation for developing laminar flow in a vertical channel is formulated. (authors)

  14. Molecular-dynamics study of amorphous SiO{sub 2} relaxation

    SciTech Connect (OSTI)

    Fadhilah, Irfan Muhammad; Rosandi, Yudi

    2015-09-30

    Using Molecular-Dynamics simulation we observed the generation of amorphous SiO{sub 2} target from a randomly distributed Si and O atoms. We applied a sequence of annealing of the target with various temperature and quenching to room temperature. The relaxation time required by the system to form SiO{sub 4} tetrahedral mesh after a relatively long simulation time, is studied. The final amorphous target was analyzed using the radial distribution function method, which can be compared with the available theoretical and experimental data. We found that up to 70% of the target atoms form the tetrahedral SiO{sub 4} molecules. The number of formed tetrahedral increases following the growth function and the rate of SiO{sub 4} formation follows Arrhenius law, depends on the annealing temperature. The local structure of amorphous SiO{sub 2} after this treatment agrees well with those reported in some literatures.

  15. Light Trapping for High Efficiency Heterojunction Crystalline Si Solar Cells: Preprint

    SciTech Connect (OSTI)

    Wang, Q.; Xu, Y.; Iwaniczko, E.; Page, M.

    2011-04-01

    Light trapping plays an important role to achieve high short circuit current density (Jsc) and high efficiency for amorphous/crystalline Si heterojunction solar cells. Si heterojunction uses hydrogenated amorphous Si for emitter and back contact. This structure of solar cell posses highest open circuit voltage of 0.747 V at one sun for c-Si based solar cells. It also suggests that over 25% record-high efficiency is possible with further improvement of Jsc. Light trapping has two important tasks. The first one is to reduce the surface reflectance of light to zero for the solar spectrum that Si has a response. The second one is to increase the effective absorption length to capture all the photon. For Si heterojunction solar cell, surface texturing, anti-reflectance indium tin oxides (ITO) layer at the front and back are the key area to improve the light trapping.

  16. Amorphization resistance of nano-engineered SiC under heavy ion irradiation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Imada, Kenta; Ishimaru, Manabu; Xue, Haizhou; Zhang, Yanwen; Shannon, Steven C.; Weber, William J.

    2016-06-19

    Silicon carbide (SiC) with a high-density of planar defects (hereafter, ‘nano-engineered SiC’) and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. Furthermore, it was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due tomore » the local increase in electronic energy loss that enhanced dynamic recovery.« less

  17. Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby

    DOE Patents [OSTI]

    Atwater, Jr., Harry A.; Zahler, James M.

    2006-11-28

    Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600.degree. C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.

  18. Structural properties of a-Si films and their effect on aluminum induced crystallization

    SciTech Connect (OSTI)

    Tankut, Aydin; Ozkol, Engin; Karaman, Mehmet; Turan, Rasit; Canli, Sedat

    2015-10-15

    In this paper, we report the influence of the structural properties of amorphous silicon (a-Si) on its subsequent crystallization behavior via the aluminum induced crystallization (AIC) method. Two distinct a-Si deposition techniques, electron beam evaporation and plasma enhanced chemical vapor deposition (PECVD), are compared for their effect on the overall AIC kinetics as well as the properties of the final poly-crystalline (poly-Si) silicon film. Raman and FTIR spectroscopy results indicate that the PECVD grown a-Si films has higher intermediate-range order, which is enhanced for increased hydrogen dilution during deposition. With increasing intermediate-range order of the a-Si, the rate of AIC is diminished, leading larger poly-Si grain size.

  19. CVD-Based Valence-Mending Passivation for Crystalline-Si Solar Cells

    SciTech Connect (OSTI)

    Tao, Meng

    2015-03-01

    The objective of this project is to investigate a new surface passivation technique, valence-mending passivation, for its applications in crystalline-Si solar cells to achieve significant efficiency improvement and cost reduction. As the enabling technique, the project includes the development of chemical vapor deposition recipes to passivate textured Si(100) and multicrystalline-Si surfaces by sulfur and the characterization of the passivated Si surfaces, including thermal stability, Schottky barrier height, contact resistance and surface recombination. One important application is to replace the Ag finger electrode in Si cells with Al to reduce cost, by ~$0.1/Wp, and allow terawatt-scale deployment of crystalline-Si solar cells. These all-Al Si cells require a low-temperature metallization process for the Al electrode, to be compatible with valence-mending passivation and to prevent Al diffusion into n-type Si. Another application is to explore valence-mending passivation of grain boundaries in multicrystalline Si by diffusing sulfur into grain boundaries, to reduce the efficiency gas between monocrystalline-Si solar cells and multicrystalline-Si cells. The major accomplishments of this project include: 1) Demonstration of chemical vapor deposition processes for valence-mending passivation of both monocrystalline Si(100) and multicrystalline Si surfaces. Record Schottky barriers have been demonstrated, with the new record-low barrier of less than 0.08 eV between Al and sulfur-passivated n-type Si(100) and the new record-high barrier of 1.14 eV between Al and sulfur-passivated p-type Si(100). On the textured p-type monocrystalline Si(100) surface, the highest barrier with Al is 0.85 eV by valence-mending passivation. 2) Demonstration of a low-temperature metallization process for Al in crystalline-Si solar cells. The new metallization process is based on electroplating of Al in a room-temperature ionic liquid. The resistivity of the electroplated Al is ~7×10–6

  20. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    SciTech Connect (OSTI)

    Prakash, A. P. Gnana Praveen, K. C.; Pushpa, N.; Cressler, John D.

    2015-05-15

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to {sup 60}Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  1. Annealed Si/SiGeC Superlattices Studied by Dark-Field Electron Holography, ToF-SIMS and Infrared Spectroscopy

    SciTech Connect (OSTI)

    Denneulin, T.; Py, M.; Barnes, J. P.; Rochat, N.; Hartmann, J. M.; Cooper, D.; Rouviere, J. L.

    2011-11-10

    Si/SiGeC superlattices are used in the construction of new generation devices such as multichannel transistors. The incorporation of C in the SiGe layers allows for a better control of the strain and the Ge content. However the formation of {beta}-SiC clusters during annealing at high temperature limits the thermal stability of the alloy. It leads to a strong modification of the strain due to the reduction of the substitutional carbon content. Here, we investigated the behavior of Si/SiGeC superlattices that have been annealed using different characterization techniques: dark-field electron holography for the evaluation of strain; infrared spectroscopy and ToF-SIMS for the determination of the composition. It was found that after annealing at 1050 deg. C, the reduction of the substitutional C proportion leads to a recovery of the perpendicular strain in the superlattice. It was also proposed that the local arrangement of C atoms in a third nearest neighbor configuration is an intermediary step during the formation of the SiC clusters.

  2. 29Si-NMR study of magnetic anisotropy and hyperfine interactions in the uranium-bsed ferromagnet UNiSi2

    SciTech Connect (OSTI)

    Sakai, Hironori; Baek, Seung H; Bauer, Eric D; Ronning, Filip; Thompson, J D

    2009-01-01

    UNiSi{sub 2} orders ferromagnetically below T{sub Curie} = 95 K. This material crystallizes in the orthorhombic CeNiSi{sub 2}-type structure. The uranium atoms form double-layers, which are stacked along the crystallographic b axis (the longest axis). From magnetization measurement the easy (hard) magnetization axis is found to be the c axis (b axis). {sup 29}Si-NMR measurements have been performed in the paramagnetic state. In UNiSi{sub 2}, two crystallographic Si sites exist with orthorhombic local symmetry. The Knight shifts on each Si site have been estimated from the spectra of random and oriented powders. The transferred hyperfine couplings have been also derived. It is found that the transferred hyperfine coupling constants on each Si site are nearly isotropic, and that their Knight shift anisotropy comes from that of the bulk susceptibility. The nuclear-spin lattice relaxation rate 1/T{sub 1} shows temperature-independent behavior, which indicates the existence of localized 5f electron.

  3. Density impact on performance of composite Si/graphite electrodes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dufek, Eric J.; Picker, Michael; Petkovic, Lucia M.

    2016-01-27

    The ability of alkali-substituted binders for composite Si and graphite negative electrodes to minimize capacity fade for lithium ion batteries is investigated. Polymer films and electrodes are described and characterized by FTIR following immersion in electrolyte (1:2 EC:DMC) for 24 h. FTIR analysis following electrode formation displayed similar alkali-ion dependent shifts in peak location suggesting that changes in the vibrational structure of the binder are maintained after electrode formation. The Si and graphite composite electrodes prepared using the alkali-substituted polyacrylates were also exposed to electrochemical cycling and it has been found that the performance of the Na-substituted binder is superiormore » to a comparable density K-substituted system. However, in comparing performance across many different electrode densities attention needs to be placed on making comparisons at similar densities, as low density electrodes tend to exhibit lower capacity fade over cycling. This is highlighted by a 6% difference between a low density K-substituted electrode and a high density Na-substituted sample. As a result, this low variance between the two systems makes it difficult to quickly make a direct evaluation of binder performance unless electrode density is tightly controlled.« less

  4. Microstructural Development in Al-Si Powder During Rapid Solidification

    SciTech Connect (OSTI)

    Amber Lynn Genau

    2004-12-19

    Powder metallurgy has become an increasingly important form of metal processing because of its ability to produce materials with superior mechanical properties. These properties are due in part to the unique and often desirable microstructures which arise as a result of the extreme levels of undercooling achieved, especially in the finest size powder, and the subsequent rapid solidification which occurs. A better understanding of the fundamental processes of nucleation and growth is required to further exploit the potential of rapid solidification processing. Aluminum-silicon, an alloy of significant industrial importance, was chosen as a model for simple eutectic systems displaying an unfaceted/faceted interface and skewed coupled eutectic growth zone, Al-Si powder produced by high pressure gas atomization was studied to determine the relationship between microstructure and alloy composition as a function of powder size and atomization gas. Critical experimental measurements of hypereutectic (Si-rich) compositions were used to determine undercooling and interface velocity, based on the theoretical models which are available. Solidification conditions were analyzed as a function of particle diameter and distance from nucleation site. A revised microstructural map is proposed which allows the prediction of particle morphology based on temperature and composition. It is hoped that this work, by providing enhanced understanding of the processes which govern the development of the solidification morphology of gas atomized powder, will eventually allow for better control of processing conditions so that particle microstructures can be optimized for specific applications.

  5. Single-mode deformation via nanoindentation in dc-Si

    SciTech Connect (OSTI)

    Wong, Sherman; Haberl, Bianca; Williams, James S.; Bradby, Jodie E.

    2015-01-01

    The mixture of the metastable body-centered cubic (bc8) and rhombohedral (r8) phases of silicon that is formed via nanoindentation of diamond cubic (dc) silicon exhibits properties that are of scientifc and technological interest. This letter demonstrates that large regions of this mixed phase can be formed in crystalline Si via nanoindentation without signifcant damage to the surrounding crystal. Cross-sectional transmission electron microscopy is used to show that volumes 6 um wide and up to 650 nm deep can be generated in this way using a spherical tip of 21.5 um diameter. The phase transformed region is characterised using both Raman microspectroscopy and transmission electron microscopy. It is found that uniform loading using large spherical indenters can favor phase transformation as the sole deformation mechanism as long as the maximum load is below a critical level. We suggest that the sluggish nature of the transformation from the dc-Si phase to the metallic (b-Sn) phase normally results in competing deformation mechanisms such as slip and cracking but these can be suppressed by controlled loading conditions.

  6. Analysis of the rotational structure in the high-resolution infrared spectra of trans-hexatriene-2-d1 and -3-d1

    SciTech Connect (OSTI)

    Craig, Norman C.; Chen, Yihui; van Besien, Herman; Blake, Thomas A.

    2014-09-01

    The 2-d1 and 3-d1 isotopologues of trans-hexatriene have been synthesized, and their high-resolution (0.0015 cm-1) IR spectra have been recorded. For each of the isotopologues the rotational structure in four C-type bands for out-of-plane vibrational modes has been analyzed, and the ground state combination differences (GSCDs) have been pooled. Ground state rotational constants have been fitted to the GSCDs. For the 2-d species, A0, B0, and C0 values of 0.7837254(5), 0.0442806(3), and 0.0419299(2) cm-1 were fitted to 2450 GSCDs. For the 3-d species, A0, B0, and C0 values of 0.7952226(8), 0.0446149(7), and 0.0422661(4) cm-1 were fitted to 2234 GSCDs. For the eleven out-of-plane modes of the two isotopologues, predictions of anharmonic wavenumbers and harmonic intensities have been computed and compared with experiment where possible.

  7. Phase Stability for the Pd-Si System. First-Principles, Experiments, and Solution-Based Modeling

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhou, S. H.; Huo, Y.; Napolitano, Ralph E.

    2015-11-05

    Relative stabilities of the compounds in the binary Pd-Si system were assessed using first-principles calculations and experimental methods. Calculations of lattice parameters and enthalpy of formation indicate that Pd5Si-μ, Pd9Si2-α, Pd3 Si-β, Pd2 Si-γ, and PdSi-δ are the stable phases at 0 K (-273 °C). X-ray diffraction analyses (XRD) and electron probe microanalysis (EPMA) of the as-solidified and heat-treated samples support the computational findings, except that the PdSi-δ phase was not observed at low temperature. Considering both experimental data and first-principles results, the compounds Pd 5 Si-μ, Pd9 Si2-α, Pd3Si-β, and Pd2Si-γ are treated as stable phases down to 0more » K (-273 °C), while the PdSi-δ is treated as being stable over a limited range, exhibiting a lower bound. Using these findings, a comprehensive solution-based thermodynamic model is formulated for the Pd-Si system, permitting phase diagram calculation. Moreover, the liquid phase is described using a three-species association model and other phases are treated as solid solutions, where a random substitutional model is adopted for Pd-fcc and Si-dia, and a two-sublattice model is employed for Pd5Si-μ, Pd9Si2-α, Pd3Si-β, Pd2Si-γ, and PdSi-δ. Model parameters are fitted using available experimental data and first-principles data, and the resulting phase diagram is reported over the full range of compositions.« less

  8. A New SiC-based DPF for the Automotive Industry

    Broader source: Energy.gov [DOE]

    Evaluation and example of performance of a new SiC-based diesel particulate filter made using unique industrial sintering process.

  9. Tuning From Half-Metallic to Semiconducting Behavior in SiC Nanoribbon...

    Office of Scientific and Technical Information (OSTI)

    Title: Tuning From Half-Metallic to Semiconducting Behavior in SiC Nanoribbons Half-metallic nanoscale conductors, highly sought after for spintronic applications, are usually ...

  10. Strain and lattice orientation distribution in SiN/Ge complementary...

    Office of Scientific and Technical Information (OSTI)

    Strain and lattice orientation distribution in SiNGe complementary metal-oxide-semiconductor compatible light emitting microstructures by quick x-ray nano-diffraction microscopy ...

  11. Closely spaced SiGe barns as stressor structures for strain-enhancement in silicon

    SciTech Connect (OSTI)

    Hrauda, N.; Zhang, J. J.; Groiss, H.; Etzelstorfer, T.; Stangl, J.; Bauer, G.; Gerharz, J. C.; Holy, V.; Deiter, C.; Seeck, O. H.

    2013-01-21

    We present tensile and compressive strains realized within the same Si capping layer on an array of SiGe islands grown on pit-patterned (001) Si substrates. The strain distributions are obtained from synchrotron X-ray diffraction studies in combination with three-dimensional finite element calculations and simulations of the diffracted intensities. For barn-shaped islands grown at 720 Degree-Sign C with average Ge contents of 30%, the Si cap layer is misfit- and threading-dislocation free and exhibits compressive strains as high as 0.8% in positions between the islands and tensile strains of up to 1% on top of the islands.

  12. Identification of luminescent surface defect in SiC quantum dots

    SciTech Connect (OSTI)

    Dai, Dejian; Guo, Xiaoxiao; Fan, Jiyang

    2015-02-02

    The surface defect that results in the usually observed blue luminescence in the SiC quantum dots (QDs) remains unclear. We experimentally identify that the surface defect C=O (in COO) is responsible for this constant blue luminescence. The HOC=O [n{sub (OH)} ? ?*{sub (CO)}] interaction between the hydroxyl and carbonyl groups changes the energy levels of C=O and makes the light absorption/emission arise at around 326/438?nm. Another surface defect (SiSi) is identified and its light absorption contributes to both C=O-related luminescence and quantum-confinement luminescence of the SiC QDs.

  13. White-blue electroluminescence from a Si quantum dot hybrid light-emitting diode

    SciTech Connect (OSTI)

    Xin, Yunzi; Nishio, Kazuyuki; Saitow, Ken-ichi

    2015-05-18

    A silicon (Si) quantum dot (QD)-based hybrid inorganic/organic light-emitting diode (LED) was fabricated via solution processing. This device exhibited white-blue electroluminescence at a low applied voltage of 6?V, with 78% of the effective emission obtained from the Si QDs. This hybrid LED produced current and optical power densities 280 and 350 times greater than those previously reported for such device. The superior performance of this hybrid device was obtained by both the prepared Si QDs and the optimized layer structure and thereby improving carrier migration through the hybrid LED and carrier recombination in the homogeneous Si QD layer.

  14. Fabrication and Hydrothermal Corrosion of NITE-SiC with Various...

    Office of Scientific and Technical Information (OSTI)

    Conference: Fabrication and Hydrothermal Corrosion of NITE-SiC with Various Sintering Additives Citation Details In-Document Search Title: Fabrication and Hydrothermal Corrosion of ...

  15. Sandia Energy - Sandia, DOE Energy Storage Program, GeneSiCSemiconduc...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DOE Energy Storage Program, GeneSiC Semiconductor, U.S. Army ARDEC: Ultra-High-Voltage Silicon Carbide Thyristors Home Infrastructure Security Energy Grid Integration Partnership...

  16. Chemical Bonding In Amorphous Si Coated-carbon Nanotube As Anodes...

    Office of Scientific and Technical Information (OSTI)

    Nanotube As Anodes For Li ion Batteries: A XANES Study The chemical bonding ... are crucial in designing further improved Si-C composite anode for lithium ion battery. ...

  17. Molecular dynamics simulations of Si etching in Cl- and Br-based...

    Office of Scientific and Technical Information (OSTI)

    Citation Details In-Document Search Title: Molecular dynamics simulations of Si etching in ... thickness, surface stoichiometry, and depth profile of surface products simulated for ...

  18. Theoretical investigations of defects in a Si-based digital ferromagne...

    Office of Scientific and Technical Information (OSTI)

    digital ferromagnetic heterostructure - a spintronic material Citation Details In-Document Search Title: Theoretical investigations of defects in a Si-based digital ...

  19. Balance of optical, structural, and electrical properties of textured liquid phase crystallized Si solar cells

    SciTech Connect (OSTI)

    Preidel, V. Amkreutz, D.; Haschke, J.; Wollgarten, M.; Rech, B.; Becker, C.

    2015-06-14

    Liquid phase crystallized Si thin-film solar cells on nanoimprint textured glass substrates exhibiting two characteristic, but distinct different surface structures are presented. The impact of the substrate texture on light absorption, the structural Si material properties, and the resulting solar cell performance is analyzed. A pronounced periodic substrate texture with a vertical feature size of about 1 μm enables excellent light scattering and light trapping. However, it also gives rise to an enhanced Si crystal defect formation deteriorating the solar cell performance. In contrast, a random pattern with a low surface roughness of 45 nm allows for the growth of Si thin films being comparable to Si layers on planar reference substrates. Amorphous Si/crystalline Si heterojunction solar cells fabricated on the low-roughness texture exhibit a maximum open circuit voltage of 616 mV and internal quantum efficiency peak values exceeding 90%, resulting in an efficiency potential of 13.2%. This demonstrates that high quality crystalline Si thin films can be realized on nanoimprint patterned glass substrates by liquid phase crystallization inspiring the implementation of tailor-made nanophotonic light harvesting concepts into future liquid phase crystallized Si thin film solar cells on glass.

  20. Using SiO Anodes for High Capacity, High Rate Electrodes for...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Using SiO Anodes for High Capacity, High Rate Electrodes for Lithium Ion Batteries ... areal capacities and good capacity retention for application in lithium ion batteries. ...

  1. Synthesis and properties of SiN coatings as stable fluorescent...

    Office of Scientific and Technical Information (OSTI)

    aligned carbon nanofibers Citation Details In-Document Search Title: Synthesis and properties of SiN coatings as stable fluorescent markers on vertically aligned carbon ...

  2. The thermal equation of state of (Mg, Fe)SiO[subscript 3] bridgmanite...

    Office of Scientific and Technical Information (OSTI)

    thermal equation of state of (Mg, Fe)SiOsubscript 3 bridgmanite (perovskite) and implications for lower mantle structures Citation Details In-Document Search Title: The thermal ...

  3. Dynamics of the time-resolved stimulated Raman scattering spectrum in presence of transient vibronic inversion of population on the example of optically excited trans-β-apo-8{sup ′}-carotenal

    SciTech Connect (OSTI)

    Kardaś, T. M. Ratajska-Gadomska, B.; Gadomski, W.; Lapini, A.; Righini, R.; Di Donato, M.; Ragnoni, E.; Foggi, P.

    2014-05-28

    We have studied the effect of transient vibrational inversion of population in trans-β-apo-8{sup ′}-carotenal on the time-resolved femtosecond stimulated Raman scattering (TR-FSRS) signal. The experimental data are interpreted by applying a quantum mechanical approach, using the formalism of projection operators for constructing the theoretical model of TR-FSRS. Within this theoretical frame we explain the presence of transient Raman losses on the Stokes side of the TR-FSRS spectrum as the effect of vibrational inversion of population. In view of the obtained experimental and theoretical results, we conclude that the excited S{sub 2} electronic level of trans-β-apo-8{sup ′}-carotenal relaxes towards the S{sub 0} ground state through a set of four vibrational sublevels of S{sub 1} state.

  4. Controlled fabrication of Si nanocrystal delta-layers in thin SiO{sub 2} layers by plasma immersion ion implantation for nonvolatile memories

    SciTech Connect (OSTI)

    Bonafos, C.; Ben-Assayag, G.; Groenen, J.; Carrada, M.; Spiegel, Y.; Torregrosa, F.; Normand, P.; Dimitrakis, P.; Kapetanakis, E.; Sahu, B. S.; Slaoui, A.

    2013-12-16

    Plasma Immersion Ion Implantation (PIII) is a promising alternative to beam line implantation to produce a single layer of nanocrystals (NCs) in the gate insulator of metal-oxide semiconductor devices. We report herein the fabrication of two-dimensional Si-NCs arrays in thin SiO{sub 2} films using PIII and rapid thermal annealing. The effect of plasma and implantation conditions on the structural properties of the NC layers is examined by transmission electron microscopy. A fine tuning of the NCs characteristics is possible by optimizing the oxide thickness, implantation energy, and dose. Electrical characterization revealed that the PIII-produced-Si NC structures are appealing for nonvolatile memories.

  5. Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlO{sub x}/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing

    SciTech Connect (OSTI)

    Akushichi, T. Shuto, Y.; Sugahara, S.; Takamura, Y.

    2015-05-07

    We investigate spin injection into Si channels using three-terminal spin-accumulation (3T-SA) devices with high-quality CoFe/MgO/n-Si and CoFe/AlO{sub x}/n-Si tunnel spin-injectors whose tunnel barriers are formed by radical oxidation of Mg and Al thin films deposited on Si(100) substrates and successive annealing under radical-oxygen exposure. When the MgO and AlO{sub x} barriers are not treated by the radical-oxygen annealing, the Hanle-effect signals obtained from the 3T-SA devices are closely fitted by a single Lorentz function representing a signal due to trap spins. On the other hand, when the tunnel barriers are annealed under radical-oxygen exposure, the Hanle-effect signals can be accurately fitted by the superposition of a Lorentz function and a non-Lorentz function representing a signal due to accumulated spins in the Si channel. These results suggest that the quality improvement of tunnel barriers treated by radical-oxygen annealing is highly effective for spin-injection into Si channels.

  6. Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Laroche, Dominique; Huang, ShiHsien; Nielsen, Erik; Liu, Chee Wee; Li, Jiun -Yun; Lu, Tzu -Ming

    2015-04-08

    We report the design, the fabrication, and the magneto-transport study of an electron bilayer system embedded in an undoped Si/SiGe double-quantum-well heterostructure. Additionally, the combined Hall densities (n Hall ) ranging from 2.6 × 1010 cm-2 to 2.7 × 1011 cm-2 were achieved, yielding a maximal combined Hall mobility (μHall ) of 7.7 × 105 cm2/(V • s) at the highest density. Simultaneous electron population of both quantum wells is clearly observed through a Hall mobility drop as the Hall density is increased to nHall > 3.3 × 1010 cm-2, consistent with Schrödinger-Poisson simulations. Furthermore, the integer and fractional quantummore » Hall effects are observed in the device, and single-layer behavior is observed when both layers have comparable densities, either due to spontaneous interlayer coherence or to the symmetric-antisymmetric gap.« less

  7. Cycling Endurance of SONOS Non-Volatile Memory Stacks Prepared with Nitrided SiO(2)/Si(100) Intefaces

    SciTech Connect (OSTI)

    Habermehl, S.; Nasby, R.D.; Rightley, M.J.

    1999-01-11

    The effects of nitrided SiO{sub 2}/Si(100) interfaces upon cycling endurance in silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory transistors are investigated. Analysis of MOSFET sub-threshold characteristics indicate cycling degradation to be a manifestation of interface state (D{sub it}) generation at the tunnel oxide/silicon interface. After 10{sup 6} write/erase cycles, SONOS film stacks prepared with nitrided tunnel oxides exhibit enhanced cycling endurance with {Delta}D{sub it}=3x10{sup 12} V{sup -1}cm{sup -2}, compared to {Delta}D{sub it}=2x10{sup 13} V{sup -l}cm{sup -2} for non-nitrided tunnel oxides. Additionally, if the capping oxide is formed by steam oxidation, rather than by deposition, SONOS stacks prepared with non-nitrided tunnel oxides exhibit endurance characteristics similar to stacks with nitrided tunnel oxides. From this observation it is concluded that latent nitridation of the tunnel oxidehilicon interface occurs during steam oxide cap formation.

  8. Size-tunable strain engineering in Ge nanocrystals embedded within SiO{sub 2} and Si{sub 3}N{sub 4}

    SciTech Connect (OSTI)

    Liao, P. H.; Hsu, T. C.; Chen, K. H.; Wang, C. C.; Li, P. W.; Cheng, T. H.; Hsu, T. M.; George, T.

    2014-10-27

    We report a unique ability to control the sign and size of the stress within Ge nanocrystals or nanodots fabricated using a complementary metal-oxide-semiconductor-compatible process within SiO{sub 2} and Si{sub 3}N{sub 4} layers. Very large (as much as 4.5%), size-dependent compressive and tensile strains can be generated depending on whether the dot is embedded within either a Si{sub 3}N{sub 4} or a SiO{sub 2} layer. Raman measurements reveal significant anharmonicity for smaller Ge dots and possible distortions of the diamond cubic lattice as evidenced by the measured Grünesien parameters and confirmed by their transmission electron diffraction patterns. Two completely different mechanisms are proposed to explain the formation of the tensile and compressive strain states, respectively.

  9. Mechanically Activated Combustion Synthesis of MoSi2-Based Composites

    SciTech Connect (OSTI)

    Shafirovich, Evgeny

    2015-09-30

    The thermal efficiency of gas-turbine power plants could be dramatically increased by the development of new structural materials based on molybdenum silicides and borosilicides, which can operate at temperatures higher than 1300 °C with no need for cooling. A major challenge, however, is to simultaneously achieve high oxidation resistance and acceptable mechanical properties at high temperatures. One approach is based on the fabrication of MoSi2-Mo5Si3 composites that combine high oxidation resistance of MoSi2 and good mechanical properties of Mo5Si3. Another approach involves the addition of boron to Mo-rich silicides for improving their oxidation resistance through the formation of a borosilicate surface layer. In particular, materials based on Mo5SiB2 phase are promising materials that offer favorable combinations of high temperature mechanical properties and oxidation resistance. However, the synthesis of Mo-Si-B multi-phase alloys is difficult because of their extremely high melting temperatures. Mechanical alloying has been considered as a promising method, but it requires long milling times, leading to large energy consumption and contamination of the product by grinding media. In the reported work, MoSi2-Mo5Si3 composites and several materials based on Mo5SiB2 phase have been obtained by mechanically activated self-propagating high-temperature synthesis (MASHS). Short-term milling of Mo/Si mixture in a planetary mill has enabled a self-sustained propagation of the combustion front over the mixture pellet, leading to the formation of MoSi2-T1 composites. Combustion of Mo/Si/B mixtures for the formation of T2 phase becomes possible if the composition is designed for the addition of more exothermic reactions leading to the formation of MoB, TiC, or TiB2. Upon ignition, Mo/Si/B and Mo/Si/B/Ti mixtures exhibited spin combustion, but the products were porous, contained undesired secondary phases, and had low oxidation resistance. It has been shown that use of

  10. Resonances above the proton threshold in 26Si

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chipps, Kelly A.

    2016-03-06

    26Al remains an intriguing target for observational gamma-ray astronomy, thanks to its characteristic decay. The 25Al(p, )26Si reaction is part of a chain that bypasses the production of the observable 26Alg in favor of the isomeric state; its rate at novae temperatures is dominated by a resonance around 400 keV, the precise location and J assignment of which has been hotly debated. Considerable confusion in this regard has arisen from the use of outdated excitation energies and masses. Here, a reanalysis of previous work is completed to first, elucidate the confusion regarding the level structure just above the proton threshold,more » and second, provide focus to future studies.« less

  11. Ab-initio modeling of electromechanical coupling at Si surfaces

    SciTech Connect (OSTI)

    Hoppe, Sandra; Mller, Stefan; Michl, Anja; Weissmller, Jrg

    2014-08-21

    The electromechanical coupling at the silicon (100) and (111) surfaces was studied via density functional theory by calculating the response of the ionization potential and the electron affinity to different types of strain. We find a branched strain response of those two quantities with different coupling coefficients for negative and positive strain values. This can be attributed to the reduced crystal symmetry due to anisotropic strain, which partially lifts the degeneracy of the valence and conduction bands. Only the Si(111) electron affinity exhibits a monotonously linear strain response, as the conduction band valleys remain degenerate under strain. The strain response of the surface dipole is linear and seems to be dominated by volume changes. Our results may help to understand the mechanisms behind electromechanical coupling at an atomic level in greater detail and for different electronic and atomic structures.

  12. Nuclear spectroscopy with Si PIN diode detectors at room temperature

    SciTech Connect (OSTI)

    Ahmad, I.; Betts, R.R.; Happ, T.; Henderson, D.J.; Wolfs, F.L.H.; Wuosmaa, A.H.

    1990-01-01

    The characteristics of PIN diodes have been determined. These diodes have lower leakage currents and noise than other types of Si radiation detectors. The energy resolutions (FWHM) of a 1 cm{sup 2} {times} 0.5 mm PIN diode measured with a pulser, 122.0 keV gamma rays, 193 keV electrons, and 5.5-MeV alpha particles were 2.6, 2.8, 2.9, and 11.0 keV, respectively. For a 6 mm {times} 6 mm {times} 0.2 mm PIN diode, the resolutions (FWHM) for a pulser, 60 keV {gamma}-rays, 193 keV electrons, and 5.5-MeV, {alpha}-particles were 2.1, 2.2, 2.4, and 10.8 keV, respectively. 11 refs., 5 figs., 1 tab.

  13. EA-1440-S-I: Mitigation Action Plan Completion Report

    Broader source: Energy.gov [DOE]

    This report presents the U.S. Department of Energy’s completion of the May 2008 Mitigation Action Plan (MAP) for the Supplement to the Final Site-Wide Environmental Assessment of the National Renewable Energy Laboratory’s South Table Mountain Complex (DOE/EA-1440-S-I) . Since May 2008, DOE and the National Renewable Energy Laboratory (NREL) have implemented various traffic mitigation measures and routinely monitored traffic at the NREL South Table Mountain (STM) campus in Golden, Colorado in accordance with the MAP. With the completion and occupancy of the new Research Support Facility (RSF) and Energy Systems Integration Facility (ESIF) and with offsite traffic impacts maintained below threshold levels, implementation of the MAP is hereby complete. NREL and DOE will continue to implement current traffic control measures and conduct informal traffic monitoring as part of standard operations and sustainability initiatives.

  14. ADVANTG 3.0.1: AutomateD VAriaNce reducTion Generator

    Energy Science and Technology Software Center (OSTI)

    2015-08-17

    Version 00 ADVANTG is an automated tool for generating variance reduction parameters for fixed-source continuous-energy Monte Carlo simulations with MCNP5 V1.60 (CCC-810, not included in this distribution) based on approximate 3-D multigroup discrete ordinates adjoint transport solutions generated by Denovo (included in this distribution). The variance reduction parameters generated by ADVANTG consist of space and energy-dependent weight-window bounds and biased source distributions, which are output in formats that can be directly used with unmodified versionsmore » of MCNP5. ADVANTG has been applied to neutron, photon, and coupled neutron-photon simulations of real-world radiation detection and shielding scenarios. ADVANTG is compatible with all MCNP5 geometry features and can be used to accelerate cell tallies (F4, F6, F8), surface tallies (F1 and F2), point-detector tallies (F5), and Cartesian mesh tallies (FMESH).« less

  15. Facile fabrication of three-dimensional mesoporous Si/SiC composites via one-step magnesiothermic reduction at relative low temperature

    SciTech Connect (OSTI)

    Jiang, Zhihang; Ma, Yongjun; Zhou, Yong; Hu, Shanglian; Han, Chaojiang; Pei, Chonghua

    2013-10-15

    Graphical abstract: - Highlights: The Si/SiC composites were synthesized by one-step magnesiothermic reduction. The mesoporous composites have a high specific surface area (655.7 m{sup 2} g{sup ?1}). The composites exhibited a strong photoluminescence and better biocompatibility. The mechanisms of formation and photoluminescence of sample were discussed. - Abstract: By converting modified silica aerogels to the corresponding silicon/silicon carbide (Si/SiC) without losing its nanostructure, three-dimensional mesoporous (3DM) Si/SiC composites are successfully synthesized via one-step magnesothermic reduction at relative low temperature (650 C). The phase composition and microstructure of the resulting samples are measured by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX), Raman spectra, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). N{sub 2}-sorption isotherms results show that the products have high BrunauerEmmettTeller (BET) specific surface areas (up to 656 m{sup 2} g{sup ?1}) and narrow pore-size distributions (1.530 nm). The composites exhibit a strong photoluminescence (PL) in blue-green light region (peak centered at 533 nm). We have set out work on the biocompatibility and enhancing PL of samples. As a result of excellent performances of the composites, it can be expected to have significant application in optoelectronics, biosensors, biological tracer and so on.

  16. In-situ formation and characterization of {alpha}-Si{sub 3}N{sub 4} whiskers from nano amorphous Si-N-C powders

    SciTech Connect (OSTI)

    Li, Y.L.; Liang, Y.; Hu, Z.Q.

    1995-08-01

    {alpha}-Si{sub 3}N{sub 4} whiskers were formed from laser-synthesized nanoscale amorphous Si-N-C powders at 1,873 K under 1 atm N{sub 2}. The as-formed whiskers were characterized by TEM, STEM, XRD techniques and the process conditions for the whisker growth were studied. The whiskers exhibit various morphologies such as the long thick straight, the prismatic, the ribbon-like, and knuckled whiskers. The gas phase reaction among N{sub 2}, SiO, and CO gases leads to Si{sub 3}N{sub 4} whisker growth on the pre-crystallized {alpha}-Si{sub 3}N{sub 4} grains by the Vapor-Solid (VS) mechanism along specific crystal planes such as {l_brace}1101{r_brace}*, which ensures an in-situ formation. No addition of other catalyst and the atomic combination of the elements in the Si-N-C powders ensure a high purity of the whiskers.

  17. All-Hot-Wire Chemical Vapor Deposition a-Si:H Solar Cells

    SciTech Connect (OSTI)

    Iwaniczko, E.; Wang, Q.; Xu, Y.; Nelson, B. P.; Mahan, A. H.; Crandall, R. S.; Branz, H. M.

    2000-01-01

    Efficient hydrogenated amorphous silicon (a-Si:H) nip solar cells have been fabricated with all doped and undoped a-Si:H layers deposited by hot-wire chemical vapor deposition (HWCVD). The total deposition time of all layers, except the top ITO-contact, is less than 4 minutes.

  18. Porous Si spheres encapsulated in carbon shells with enhanced anodic performance in lithium-ion batteries

    SciTech Connect (OSTI)

    Wang, Hui; Wu, Ping Shi, Huimin; Lou, Feijian; Tang, Yawen; Zhou, Tongge; Zhou, Yiming Lu, Tianhong

    2014-07-01

    Highlights: • In situ magnesiothermic reduction route for the formation of porous Si@C spheres. • Unique microstructural characteristics of both porous sphere and carbon matrix. • Enhanced anodic performance in term of cycling stability for lithium-ion batteries. - Abstract: A novel type of porous Si–C micro/nano-hybrids, i.e., porous Si spheres encapsulated in carbon shells (porous Si@C spheres), has been constructed through the pyrolysis of polyvinylidene fluoride (PVDF) and subsequent magnesiothermic reduction methodology by using SiO{sub 2} spheres as precursors. The as-synthesized porous Si@C spheres have been applied as anode materials for lithium-ion batteries (LIBs), and exhibit enhanced anodic performance in term of cycling stability compared with bare Si spheres. For example, the porous Si@C spheres are able to exhibit a high reversible capacity of 900.0 mA h g{sup −1} after 20 cycles at a current density of 0.05 C (1 C = 4200 mA g{sup −1}), which is much higher than that of bare Si spheres (430.7 mA h g{sup −1})

  19. Ultrathin nanosheets of CrSiTe3. A semiconducting two-dimensional ferromagnetic material

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lin, Ming -Wei; Zhung, Houlong L.; Yan, Jiaqiang; Ward, Thomas Zac; Puretzky, Alexander A.; Rouleau, Christopher M.; Gai, Zheng; Liang, Liangbo; Meunier, Vincent; Ganesh, Panchapakesan; et al

    2015-11-27

    Finite range ferromagnetism and antiferromagnetism in two-dimensional (2D) systems within an isotropic Heisenberg model at non-zero temperature were originally proposed to be impossible. However, recent theoretical studies using an Ising model have recently shown that 2D magnetic crystals can exhibit magnetism. Experimental verification of existing 2D magnetic crystals in this system has remained elusive. In this work we for the first time exfoliate the CrSiTe3, a bulk ferromagnetic semiconductor, to mono- and few-layer 2D crystals onto a Si/SiO2 substrate. The Raman spectra show the good stability and high quality of the exfoliated flakes, consistent with the computed phonon spectra ofmore » 2D CrSiTe3, giving a strong evidence for the existence of 2D CrSiTe3 crystals. When the thickness of the CrSiTe3 crystals is reduced to few-layers, we observed a clear change in resistivity at 80~120 K, consistent with the theoretical calculations on the Curie temperature (Tc) of ~80 K for the magnetic ordering of 2D CrSiTe3 crystals. As a result, the ferromagnetic mono- and few-layer 2D CrSiTe3 indicated here should enable numerous applications in nano-spintronics.« less

  20. Chemical reactivity of CVC and CVD SiC with UO2 at high temperatures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Silva, Chinthaka M.; Katoh, Yutai; Voit, Stewart L.; Snead, Lance L.

    2015-02-11

    Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300 C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity, according to microstructural investigations. But, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500 C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500more » C. Moreover, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.« less

  1. Method of preparing (CH.sub.3).sub.3 SiNSO and byproducts thereof

    DOE Patents [OSTI]

    Spicer, Leonard D.; Bennett, Dennis W.; Davis, Jon F.

    1984-01-01

    (CH.sub.3).sub.3 SiNSO is produced by the reaction of ((CH.sub.3).sub.3 Si).sub.2 NH with SO.sub.2. Also produced in the reaction are ((CH.sub.3).sub.3 Si).sub.2 O and a new solid compound [NH.sub.4 ][(CH.sub.3).sub.3 SiOSO.sub.2 ]. Both (CH.sub.3).sub.3 SiNSO and [NH.sub.4 ][(CH.sub.3).sub.3 SiOSO.sub.2 ] have fluorescent properties. The reaction of the subject invention is used in a method of measuring the concentration of SO.sub.2 pollutants in gases. By the method, a sample of gas is bubbled through a solution of ((CH.sub.3).sub.3 Si).sub.2 NH, whereby any SO.sub.2 present in the gas will react to produce the two fluorescent products. The measured fluorescence of these products can then be used to calculate the concentration of SO.sub.2 in the original gas sample. The solid product [NH.sub.4 ][(CH.sub.3).sub.3 SiOSO.sub.2 ] may be used as a standard in solid state NMR spectroscopy.

  2. Band alignment at AlN/Si (111) and (001) interfaces

    SciTech Connect (OSTI)

    King, Sean W. Davis, Robert F.; Nemanich, Robert J.

    2015-07-28

    To advance the development of III-V nitride on silicon heterostructure semiconductor devices, we have utilized in-situ x-ray photoelectron spectroscopy (XPS) to investigate the chemistry and valence band offset (VBO) at interfaces formed by gas source molecular beam epitaxy of AlN on Si (001) and (111) substrates. For the range of growth temperatures (600–1050 °C) and Al pre-exposures (1–15 min) explored, XPS showed the formation of Si-N bonding at the AlN/Si interface in all cases. The AlN/Si VBO was determined to be −3.5 ± 0.3 eV and independent of the Si orientation and degree of interfacial Si-N bond formation. The corresponding AlN/Si conduction band offset (CBO) was calculated to be 1.6 ± 0.3 eV based on the measured VBO and band gap for wurtzite AlN. Utilizing these results, prior reports for the GaN/AlN band alignment, and transitive and commutative rules for VBOs, the VBO and CBO at the GaN/Si interface were determined to be −2.7 ± 0.3 and −0.4 ± 0.3 eV, respectively.

  3. Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin films

    SciTech Connect (OSTI)

    Do, Woori; Jin, Won-Beom; Choi, Jungwan; Bae, Seung-Muk; Kim, Hyoung-June; Kim, Byung-Kuk; Park, Seungho; Hwang, Jin-Ha

    2014-10-15

    Highlights: • Intensified visible light irradiation was generated via a high-powered Xe arc lamp. • The disordered Si atomic structure absorbs the intensified visible light. • The rapid heating activates electrically boron-implanted Si thin films. • Flash lamp heating is applicable to low temperature polycrystalline Si thin films. - Abstract: Boron-implanted polycrystalline Si thin films on glass substrates were subjected to a short duration (1 ms) of intense visible light irradiation generated via a high-powered Xe arc lamp. The disordered Si atomic structure absorbs the intense visible light resulting from flash lamp annealing. The subsequent rapid heating results in the electrical activation of boron-implanted Si thin films, which is empirically observed using Hall measurements. The electrical activation is verified by the observed increase in the crystalline component of the Si structures resulting in higher transmittance. The feasibility of flash lamp annealing has also been demonstrated via a theoretical thermal prediction, indicating that the flash lamp annealing is applicable to low-temperature polycrystalline Si thin films.

  4. Heat Pipe Embedded AlSiC Plates for High Conductivity - Low CTE Heat Spreaders

    SciTech Connect (OSTI)

    Johnson, Matthew ); Weyant, J.; Garner, S. ); Occhionero, M. )

    2010-01-07

    Heat pipe embedded aluminum silicon carbide (AlSiC) plates are innovative heat spreaders that provide high thermal conductivity and low coefficient of thermal expansion (CTE). Since heat pipes are two phase devices, they demonstrate effective thermal conductivities ranging between 50,000 and 200,000 W/m-K, depending on the heat pipe length. Installing heat pipes into an AlSiC plate dramatically increases the plates effective thermal conductivity. AlSiC plates alone have a thermal conductivity of roughly 200 W/m-K and a CTE ranging from 7-12 ppm/ deg C, similar to that of silicon. An equivalent sized heat pipe embedded AlSiC plate has effective thermal conductivity ranging from 400 to 500 W/m-K and retains the CTE of AlSiC.

  5. Model of U3Si2 Fuel System using BISON Fuel Code

    SciTech Connect (OSTI)

    K. E. Metzger; T. W. Knight; R. L. Williamson

    2014-04-01

    This research considers the proposed advanced fuel system: U3Si2 combined with an advanced cladding. U3Si2 has a number of advantageous thermophysical properties, which motivate its use as an accident tolerant fuel. This preliminary model evaluates the behavior of U3Si2 using available thermophysical data to predict the cladding-fuel pellet temperature and stress using the fuel performance code: BISON. The preliminary results obtained from the U3Si2 fuel model describe the mechanism of Pellet-Clad Mechanical Interaction for this system while more extensive testing including creep testing of U3Si2 is planned for improved understanding of thermophysical properties for predicting fuel performance.

  6. Numerical analysis for high-efficiency GaAs solar cells fabricated on Si substrates

    SciTech Connect (OSTI)

    Yamaguchi, M.; Amano, C.; Itoh, Y.

    1989-07-15

    This paper describes some recent developments in GaAs thin-film solar cells fabricated on Si substrates by metalorganic chemical vapor deposition and numerically analyzes them.GaAs solar cells with efficiency of more than 18% are successfully fabricated on Si substrates by reducing the dislocation density. Photovoltaic properties of GaAs/Si cells are analyzed by considering the effect of nonuniform dislocation distribution on recombination properties of GaAs thin films on Si substrates. Numerical analysis shows that the effect of majority-carrier trapping must be considered. High efficiency GaAs solar cells with total-area efficiency of over 20% on Si substrates can be realized if dislocation density can be reduced to less than 5/times/10/sup 5/ cm/sup /minus/2/.

  7. Effects of aluminum on epitaxial graphene grown on C-face SiC

    SciTech Connect (OSTI)

    Xia, Chao Johansson, Leif I.; Hultman, Lars; Virojanadara, Chariya; Niu, Yuran

    2015-05-21

    The effects of Al layers deposited on graphene grown on C-face SiC substrates are investigated before and after subsequent annealing using low energy electron diffraction (LEED), photoelectron spectroscopy, and angle resolved photoemission. As-deposited layers appear inert. Annealing at a temperature of about 400?C initiates migration of Al through the graphene into the graphene/SiC interface. Further annealing at temperatures from 500?C to 700?C induces formation of an ordered compound, producing a two domain ?7??7R19 LEED pattern and significant changes in the core level spectra that suggest formation of an Al-Si-C compound. Decomposition of this compound starts after annealing at 800?C, and at 1000?C, Al is no longer possible to detect at the surface. On Si-face graphene, deposited Al layers did not form such an Al-Si-C compound, and Al was still detectable after annealing above 1000?C.

  8. Towards III-V solar cells on Si: Improvement in the crystalline quality of Ge-on-Si virtual substrates through low porosity porous silicon buffer layer and annealing

    SciTech Connect (OSTI)

    Calabrese, Gabriele; Baricordi, Stefano; Bernardoni, Paolo; Fin, Samuele; Guidi, Vincenzo; Vincenzi, Donato

    2014-09-26

    A comparison between the crystalline quality of Ge grown on bulk Si and on a low porosity porous Si (pSi) buffer layer using low energy plasma enhanced chemical vapor deposition is reported. Omega/2Theta coupled scans around the Ge and Si (004) diffraction peaks show a reduction of the Ge full-width at half maximum (FWHM) of 22.4% in presence of the pSi buffer layer, indicating it is effective in improving the epilayer crystalline quality. At the same time atomic force microscopy analysis shows an increase in root means square roughness for Ge grown on pSi from 38.5 nm to 48.0 nm, as a consequence of the larger surface roughness of pSi compared to bulk Si. The effect of 20 minutes vacuum annealing at 580C is also investigated. The annealing leads to a FWHM reduction of 23% for Ge grown on Si and of 36.5% for Ge on pSi, resulting in a FWHM of 101 arcsec in the latter case. At the same time, the RMS roughness is reduced of 8.8% and of 46.5% for Ge grown on bulk Si and on pSi, respectively. The biggest improvement in the crystalline quality of Ge grown on pSi with respect to Ge grown on bulk Si observed after annealing is a consequence of the simultaneous reorganization of the Ge epilayer and the buffer layer driven by energy minimization. A low porosity buffer layer can thus be used for the growth of low defect density Ge on Si virtual substrates for the successive integration of III-V multijunction solar cells on Si. The suggested approach is simple and fast thus allowing for high throughput-, moreover is cost effective and fully compatible with subsequent wafer processing. Finally it does not introduce new chemicals in the solar cell fabrication process and can be scaled to large area silicon wafers.

  9. Structural evolution of Ge-rich Si{sub 1-x}Ge{sub x} films deposited...

    Office of Scientific and Technical Information (OSTI)

    clusters percolate together and Si diffuses and redistributes to form a GeSiGe coreshell structure, and some Ge atoms partially diffuse to the surface as a result of segregation. ...

  10. Role of Si on the Diffusional Interactions between U-Mo and Al-Si Alloys at 823 K (550 degrees C)

    SciTech Connect (OSTI)

    E. Perez; Y.H. Sohn; D.D. Keiser, Jr.

    2013-01-01

    U-Mo dispersions in Al-alloy matrix and monolithic fuels encased in Al-alloy are under development to fulfill the requirements for research and test reactors to use low-enriched molybdenum stabilized uranium alloys fuels. Significant interaction takes place between the U-Mo fuel and Al during manufacturing and in-reactor irradiation. The interactions products are Al-rich phases with physical and thermal characteristics that adversely affect fuel performance and lead to premature failure. Detailed analysis of the interdiffusion and microstructural development of this system was carried through diffusion couples consisting of U-7wt.%Mo, U-10wt.%Mo and U-12wt.%Mo in contact with pure Al, Al-2wt.%Si, and Al-5wt.%Si, annealed at 823K for 1, 5 and 20 hours. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were employed for the analysis. Diffusion couples consisting of U-Mo vs. pure Al contained UAl3, UAl4, U6Mo4Al43, and UMo2Al20 phases. The addition of Si to the Al significantly reduced the thickness of the interdiffusion zone. The interdiffusion zones developed Al and Si enriched regions, whose locations and size depended on the Si and Mo concentrations in the terminal alloys. In the couples, the (U,Mo)(Al,Si)3 phase was observed throughout interdiffusion zone, and the U6Mo4Al43 and UMo2Al20 phases were observed only where the Si concentrations were low.

  11. Schottky barrier height measurements of Cu/Si(001), Ag/Si(001), and Au/Si(001) interfaces utilizing ballistic electron emission microscopy and ballistic hole emission microscopy

    SciTech Connect (OSTI)

    Balsano, Robert; Matsubayashi, Akitomo; LaBella, Vincent P.

    2013-11-15

    The Schottky barrier heights of both n and p doped Cu/Si(001), Ag/Si(001), and Au/Si(001) diodes were measured using ballistic electron emission microscopy and ballistic hole emission microscopy (BHEM), respectively. Measurements using both forward and reverse ballistic electron emission microscopy (BEEM) and (BHEM) injection conditions were performed. The Schottky barrier heights were found by fitting to a linearization of the power law form of the Bell-Kaiser BEEM model. The sum of the n-type and p-type barrier heights are in good agreement with the band gap of silicon and independent of the metal utilized. The Schottky barrier heights are found to be below the region of best fit for the power law form of the BK model, demonstrating its region of validity.

  12. Low-Defect Heteroepitaxy on Porous Si Substrates: Cooperative Research and Development Final Report, CRADA Number CRD-13-534

    SciTech Connect (OSTI)

    Lee, B.

    2014-12-01

    In this collaboration, NREL will grow Ge, SiGe, and III-V layers on porous Si (pSi) substrates prepared either by Crystal Solar or at NREL. The intent is to grow low-defect epitaxial III-V alloys using the porous Si layer to prevent defect formation. Finally, we aim to fabricate solar cells from the III-V layers to prove the electronic quality.

  13. Potential variation around grain boundaries in BaSi{sub 2} films grown on multicrystalline silicon evaluated using Kelvin probe force microscopy

    SciTech Connect (OSTI)

    Baba, Masakazu; Tsukahara, Daichi; Toko, Kaoru; Hara, Kosuke O.; Usami, Noritaka; Sekiguchi, Takashi; Suemasu, Takashi

    2014-12-21

    Potential variations across the grain boundaries (GBs) in a 100?nm thick undoped n-BaSi{sub 2} film on a cast-grown multicrystalline Si (mc-Si) substrate are evaluated using Kelvin probe force microscopy (KFM). The ?-2? X-ray diffraction pattern reveals diffraction peaks, such as (201), (301), (410), and (411) of BaSi{sub 2}. Local-area electron backscatter diffraction reveals that the a-axis of BaSi{sub 2} is tilted slightly from the surface normal, depending on the local crystal plane of the mc-Si. KFM measurements show that the potentials are not significantly disordered in the grown BaSi{sub 2}, even around the GBs of mc-Si. The potentials are higher at GBs of BaSi{sub 2} around Si GBs that are formed by grains with a Si(111) face and those with faces that deviate slightly from Si(111). Thus, downward band bending occurs at these BaSi{sub 2} GBs. Minority carriers (holes) undergo a repelling force near the GBs, which may suppress recombination as in the case of undoped n-BaSi{sub 2} epitaxial films on a single crystal Si(111) substrate. The barrier height for hole transport across the GBs varies in the range from 10 to 55?meV. The potentials are also higher at the BaSi{sub 2} GBs grown around Si GBs composed of grains with Si(001) and Si(111) faces. The barrier height for hole transport ranges from 5 to 55?meV. These results indicate that BaSi{sub 2} GBs formed on (111)-dominant Si surfaces do not have a negative influence on the minority-carrier properties, and thus BaSi{sub 2} formed on underlayers, such as (111)-oriented Si or Ge and on (111)-oriented mc-Si, can be utilized as a solar cell active layer.

  14. Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

    SciTech Connect (OSTI)

    Yuryev, V. A. Chizh, K. V.; Chapnin, V. A.; Mironov, S. A.; Dubkov, V. P.; Uvarov, O. V.; Kalinushkin, V. P.; Senkov, V. M.; Nalivaiko, O. Y.; Novikau, A. G.; Gaiduk, P. I.

    2015-05-28

    Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si{sub 3}N{sub 4}/SiO{sub 2}/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about ?2%/?C in the temperature interval from 25 to 50?C.

  15. Optoelectronic properties of Mg{sub 2}Si semiconducting layers with high absorption coefficients

    SciTech Connect (OSTI)

    Kato, Takashi; Sago, Yuichiro; Fujiwara, Hiroyuki

    2011-09-15

    In an attempt to develop a low-cost material for solar cell devices, polycrystalline magnesium silicide (poly-Mg{sub 2}Si) semiconducting layers have been prepared by applying rf magnetron sputtering using a Mg{sub 2}Si target. The optimum substrate temperature for the poly-Mg{sub 2}Si growth was found to be T{sub s} = 200 deg. C; the film deposition at higher temperatures leads to desorption of Mg atoms from the growing surface, while the amorphous phase formation occurs at room temperature. The poly-Mg{sub 2}Si layer deposited at T{sub s} = 200 deg. C shows the (111) preferential orientation with a uniform grain size of {approx}50 nm. The dielectric function of the poly-Mg{sub 2}Si layer has been determined accurately by spectroscopic ellipsometry. From the analysis, quite high absorption coefficients and an indirect gap of 0.77 eV in the poly-Mg{sub 2}Si layer have been confirmed. The above poly-Mg{sub 2}Si layer shows clear photoconductivity and can be applied as a narrow-gap bottom layer in multi-junction solar cell devices.

  16. GaAs buffer layer technique for vertical nanowire growth on Si substrate

    SciTech Connect (OSTI)

    Xu, Xiaoqing Parizi, Kokab B.; Huo, Yijie; Kang, Yangsen; Philip Wong, H.-S.; Li, Yang

    2014-02-24

    Gold catalyzed vapor-liquid-solid method is widely applied to IIIV nanowire (NW) growth on Si substrate. However, the easy oxidation of Si, possible Si contamination in the NWs, high defect density in the NWs, and high sensitivity of the NW morphology to growth conditions largely limit its controllability. In this work, we developed a buffer layer technique by introducing a GaAs thin film with predefined polarity as a template. It is found that samples grown on these buffer layers all have high vertical NW yields in general, due to the single-orientation of the buffer layers. Low temperature buffer with smoother surface leads to highest yield of vertical NWs, while high temperature (HT) buffer with better crystallinity results in perfect NW quality. The defect-free property we observed here is very promising for optoelectronic device applications based on GaAs NW. Moreover, the buffer layers can eliminate Si contamination by preventing Si-Au alloy formation and by increasing the thickness of the Si diffusion barrier, thus providing more flexibility to vertical NW growth. The buffer layer technique we demonstrated here could be easily extended to other III-V on Si system for electronic and photonic applications.

  17. Thermal stability of photovoltaic a-Si:H determined by neutron reflectometry

    SciTech Connect (OSTI)

    Qviller, A. J. Haug, H.; You, C. C.; Hasle, I. M.; Marstein, E. S.; Frommen, C.; Hauback, B. C.; Dennison, A. J. C.; Vorobiev, A.; streng, E.; Fjellvg, H.; Hjrvarsson, B.

    2014-12-08

    Neutron and X-ray reflectometry were used to determine the layer structure and hydrogen content of thin films of amorphous silicon (a-Si:H) deposited onto crystalline silicon (Si) wafers for surface passivation in solar cells. The combination of these two reflectometry techniques is well suited for non-destructive probing of the structure of a-Si:H due to being able to probe buried interfaces and having sub-nanometer resolution. Neutron reflectometry is also unique in its ability to allow determination of density gradients of light elements such as hydrogen (H). The neutron scattering contrast between Si and H is strong, making it possible to determine the H concentration in the deposited a-Si:H. In order to correlate the surface passivation properties supplied by the a-Si:H thin films, as quantified by obtainable effective minority carrier lifetime, photoconductance measurements were also performed. It is shown that the minority carrier lifetime falls sharply when H has been desorbed from a-Si:H by annealing.

  18. First-principles study of spin-transfer torque in Co{sub 2}MnSi/Al/Co{sub 2}MnSi spin-valve

    SciTech Connect (OSTI)

    Tang, Ling Yang, Zejin

    2013-11-21

    The spin-transfer torque (STT) in Co{sub 2}MnSi(CMS)/Al/Co{sub 2}MnSi spin-valve system with and without interfacial disorder is studied by a first-principles noncollinear wave-function-matching method. It is shown that in the case of clean interface the angular dependence of STT for CoCo/Al (the asymmetry parameter Λ≈4.5) is more skewed than that for MnSi/Al (Λ≈2.9), which suggests the clean CoCo/Al architecture is much more efficient for the application on radio frequency oscillation. We also find that even with interfacial disorder the spin-valve of half-metallic CMS still has a relatively large parameter Λ compared to that of conventional ferromagnet. In addition, for clean interface the in-plane torkance of MnSi/Al is about twice as large as that of CoCo/Al. However, as long as the degree of interfacial disorder is sufficiently large, the CoCo/Al and MnSi/Al will show approximately the same magnitude of in-plane torkance. Furthermore, our results demonstrate that CMS/Al/CMS system has very high efficiency of STT to switch the magnetic layer of spin-valve.

  19. Influence of annealing atmosphere on the magnetic properties of SiO{sub 2}/Fe/SiO{sub 2} sandwiched nanocomposite films

    SciTech Connect (OSTI)

    Zhu, P. L.; Liu, Z.; Fan, Y. L.; Jiang, Z. M.; Yang, X. J.; Xue, F.

    2009-08-15

    The magnetic properties of SiO{sub 2}/Fe/SiO{sub 2} nanocomposite films are studied by magnetic force microscopy and vibrating sample magnetometer. The films were fabricated by alternately depositing SiO{sub 2}, Fe, and SiO{sub 2} on Si substrates with magnetron sputtering followed by thermal annealing. It is found that the annealing atmosphere significantly influences the sample structure, composition, and magnetic properties. The samples annealed in forming gas show much better magnetic properties than those annealed in vacuum and in N{sub 2}. The saturation magnetization can reach 200 emu/g, fairly close to the value of bulk Fe, and the coercivity can reach 400 Oe, much higher than 10 Oe of the bulk Fe. X-ray photoelectron spectroscopic depth profile measurement was carried out to study the mechanism of the strong influence of annealing atmosphere. For the samples annealed in forming gas, Fe nanoparticles are mildly oxidized, forming thin shells of Fe{sub 2}O{sub 3} surrounding them, which is beneficial for maintaining the ferromagnetic behavior and enhancing the coercivity of nanoparticles.

  20. Dimensional isotropy of 6H and 3C SiC under neutron irradiation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Snead, Lance L.; Katoh, Yutai; Koyanagi, Takaaki; Terrani, Kurt A.; Specht, Eliot D.

    2016-01-16

    This investigation experimentally determines the as-irradiated crystal axes dimensional change of the common polytypes of SiC considered for nuclear application. Single crystal α-SiC (6H), β-SiC (3C), CVD β-SiC, and single crystal Si have been neutron irradiated near 60 °C from 2 × 1023 to 2 × 1026 n/m2 (E > 0.1 MeV), or about 0.02–20 dpa, in order to study the effect of irradiation on bulk swelling and strain along independent crystalline axes. Single crystal, powder diffractometry and density measurement have been carried out. For all neutron doses where the samples remained crystalline all SiC materials demonstrated equivalent swelling behavior.more » Moreover the 6H–SiC expanded isotropically. The magnitude of the swelling followed a ~0.77 power law against dose consistent with a microstructure evolution driven by single interstitial (carbon) mobility. Extraordinarily large ~7.8% volume expansion in SiC was observed prior to amorphization. Above ~0.9 × 1025 n/m2 (E > 0.1 MeV) all SiC materials became amorphous with an identical swelling: a 11.7% volume expansion, lowering the density to 2.84 g/cm3. As a result, the as-amorphized density was the same at the 2 × 1025 and 2 × 1026 n/m2 (E > 0.1 MeV) dose levels.« less

  1. Combustion control technologies for direct injection SI engine

    SciTech Connect (OSTI)

    Kume, T.; Iwamoto, Y.; Iida, K.; Murakami, M.; Akishino, K.; Ando, H.

    1996-09-01

    Novel combustion control technologies for the direct injection SI engine have been developed. By adopting upright straight intake ports to generate air tumble, an electromagnetic swirl injector to realize optimized spray dispersion and atomization and a compact piston cavity to maintain charge stratification, it has become possible to achieve super-lean stratified combustion for higher thermal efficiency under partial loads as well as homogeneous combustion to realize higher performance at full loads. At partial loads, fuel is injected into the piston cavity during the later stage of the compression stroke. Any fuel spray impinging on the cavity wall is directed to the spark plug. Tumbling air flow in the cavity also assists the conservation of the rich mixture zone around the spark plug. Stable combustion can be realized under a air fuel ratio exceeding 40. At higher loads, fuel is injected during the early stage of the intake stroke. Since air cooling by the latent heat of vaporization increases volumetric efficiency and reduces the octane number requirement, a high compression ratio of 12 to 1 can be adopted. As a result, engines utilizing these types of control technologies show a 10% increase in improved performance over conventional port injection engines.

  2. Indium Growth and Island Height Control on Si Submonolayer Phases

    SciTech Connect (OSTI)

    Chen, Jizhou

    2009-05-09

    wave length of 13.4nm so it can curve on the surface of an sample to make structure as small as the order of 10nm. however, lithograph usually causes permanent damages to the surface and in many cases the QDs are damaged during the lithograph and therefore result in high percentage of defects. Quantum size effect has attracted more and more interests in surface science due to many of its effects. One of its effects is the height preference in film growing and the resulting possibility of uniformly sized self-assemble nanostructure. The experiment of Pb islands on In 4x1 phase shows that both the height and the width can be controlled by proper growth conditions, which expands the growth dimensions from 1 to 2. This discover leads us to study the In/Pb interface. In Ch.3, we found that the Pb islands growing on In 4x1-Si(111) surface which have uniform height due to QSE and uniform width due to the constriction of In 4x1 lattice have unexpected stability. These islands are stable in even RT, unlike usual nanostructures on Pb/Si surface which are stable only at low temperature. Since similar structures are usually grown at low temperature, this discovery makes the grown structures closer to technological applications. It also shows the unusual of In/Pb interface. Then we studied the In islands grown on Pb-{alpha}-{radical}3x{radical}3-Si(111) phase in Ch.4. These islands have fcc structure in the first few layers, and then convert to bct structure. The In fcc islands have sharp height preference due to QSE like Pb islands. However, the preferred height is different (7 layer for Pb on Si 7x7 and 4 layer for Pb on In 4x1), due to the difference of interface. The In islands structure prefers to be bct than fcc with coverage increase. It is quantitatively supported by first-principle calculation. Unexpectedly, the In islands grown on various of In interfaces didn't show QSE effects and phase transition from fcc and bct structures as on the Pb-{alpha} interface (Ch.6). In g

  3. Potential improvements in SiGe radioisotope thermoelectric generator performance

    SciTech Connect (OSTI)

    Mowery, A.L.

    1999-01-01

    In accordance with NASA{close_quote}s slogan: {open_quotes}Better, Cheaper, Faster,{close_quotes} this paper will address potential improvements to SiGe RTG technology to make them Better. RTGs are doubtless cheaper than {open_quotes}paper designs{close_quotes} which are better and cheaper until development, performance and safety test costs are considered. RTGs have the advantage of being fully developed and tested in the rigors of space for over twenty years. Further, unless a new system can be accelerated tested, as were the RTGs, they cannot be deployed reliably unless a number of systems have succeeded for test periods exceeding the mission lifetime. Two potential developments are discussed that can improve the basic RTG performance by 10 to 40{sup +}{percent} depending on the mission profile. These improvements could be demonstrated in years. Accelerated testing could also be performed in this period to preserve existing RTG reliability. Data from a qualification tested RTG will be displayed, while not definitive, to support the conclusions. Finally, it is anticipated that other investigators will be encouraged to suggest further modifications to the basic RTG design to improve its performance. {copyright} {ital 1999 American Institute of Physics.}

  4. Oxidation of step edges on vicinal 4H-SiC(0001) surfaces

    SciTech Connect (OSTI)

    Li, Wenbo; Zhu, Qiaozhi; Wang, Dejun, E-mail: dwang121@dlut.edu.cn [School of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024 (China)] [School of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024 (China); Zhao, Jijun [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), College of Advanced Science and Technology, Ministry of Education, Dalian 116024 (China)] [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), College of Advanced Science and Technology, Ministry of Education, Dalian 116024 (China)

    2013-11-18

    The oxidation processes of stepped SiC(0001) surfaces are studied within the ab initio atomistic thermodynamics approach. Our calculations show that a one-dimensional -Si-O- chain structure as a precursor for oxide growth on stepped SiC surfaces is formed along the step edge, promoting further oxidation of the step edges. Following the modified Deal-Grove oxidation model, we also find that the oxidation rate at steps is higher than that at terraces by three orders of magnitude. These findings give a reasonable explanation for the oxide thickness fluctuation between the step and the terrace observed in the previous experiments.

  5. Sensitivities of I-V Parameters in C-Si PV Modules of Hygrothermal Stress |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Sensitivities of I-V Parameters in C-Si PV Modules of Hygrothermal Stress Sensitivities of I-V Parameters in C-Si PV Modules of Hygrothermal Stress Presented at the PV Module Reliability Workshop, February 26 - 27 2013, Golden, Colorado pvmrw13_ps4_espec_suzuki.pdf (2.81 MB) More Documents & Publications The Acceleration of Degradation by HAST and Air-HAST in c-Si PV Modules Agenda for the PV Module Reliability Workshop, February 26 - 27 2013, Golden, Colorado

  6. PID-free C-Si PV Module Using Novel Chemically-Tempered Glass | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy PID-free C-Si PV Module Using Novel Chemically-Tempered Glass PID-free C-Si PV Module Using Novel Chemically-Tempered Glass Presented at the PV Module Reliability Workshop, February 26 - 27 2013, Golden, Colorado pvmrw13_ps4_aist_kambe.pdf (561.42 KB) More Documents & Publications EXPERIENCES ON PID TESTING OF PV MODULES IN 2012 Final Report - High efficiency heterojunction solar cell on 30μm thin c-Si substrates using novel exfoliation technology Agenda for the PV Module

  7. Unexpected formal insertion of CO2 into the C-Si bonds of a zinc compound

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kemp, Richard A.; McGrew, Genette I.; Khatri, Pathik A.; Geiger, William E.; Waterman, Rory

    2015-09-08

    Reaction of [κ2-PR2C(SiMe3)Py]2Zn (R = Ph, 2a; iPr, 2b) with CO2 affords the products of formal insertion at the C–Si bond, [κ2-PR2CC(O)O(SiMe3)Py]2Zn (R = Ph, 3a; iPr, 3b). Insertion product 3b was structurally characterized. As a result, the reaction appears to be a stepwise insertion and rearrangement of CO2 based on kinetic data.

  8. The Acceleration of Degradation by HAST and Air-HAST in c-Si PV Modules |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy The Acceleration of Degradation by HAST and Air-HAST in c-Si PV Modules The Acceleration of Degradation by HAST and Air-HAST in c-Si PV Modules Presented at the PV Module Reliability Workshop, February 26 - 27 2013, Golden, Colorado pvmrw13_ps4_espc_suzuki.pdf (899.69 KB) More Documents & Publications Sensitivities of I-V Parameters in C-Si PV Modules of Hygrothermal Stress Agenda for the PV Module Reliability Workshop, February 26 - 27 2013, Golden, Colorado

  9. Atomic configuration of irradiation-induced planar defects in 3C-SiC

    SciTech Connect (OSTI)

    Lin, Y. R. [Department of Engineering and System Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China); National Synchrotron Radiation Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu 30076, Taiwan (China); Ho, C. Y. [Institute of Nuclear Engineering and Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China); Hsieh, C. Y.; Chang, M. T.; Lo, S. C. [Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan (China); Chen, F. R. [Department of Engineering and System Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China); Kai, J. J., E-mail: ceer0001@gmail.com [Department of Engineering and System Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China); Institute of Nuclear Engineering and Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China)

    2014-03-24

    The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions.

  10. Magnetic structure of the antiferromagnetic Kondo lattice compounds CeRhAl4Si2 and CeIrAl4Si2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ghimire, N. J.; Calder, S.; Janoschek, M.; Bauer, E. D.

    2015-06-01

    In this article, we have investigated the magnetic ground state of the antiferromagnetic Kondo-lattice compounds CeMAl4Si2(M = Rh, Ir) using neutron powder diffraction. Although both of these compounds show two magnetic transitions TN1 and TN2 in the bulk properties measurements, evidence for magnetic long-range order was only found below the lower transition TN2. Analysis of the diffraction profiles reveals a commensurate antiferromagnetic structure with a propagation vector k = (0, 0, 1/2). The magnetic moment in the ordered state of CeRhAl4Si2 and CeIrAl4Si2 were determined to be 1.14(2) and 1.41(3) μB/Ce, respectively, and are parallel to the crystallographic c-axis inmore » agreement with magnetic susceptibility measurements.« less

  11. Production of higher silanes in radio frequency SiH{sub 4} and H{sub 2}-SiH{sub 4} plasmas

    SciTech Connect (OSTI)

    Horvath, P.; Rozsa, K.; Gallagher, A.

    2004-12-15

    Stable gases produced in SiH{sub 4} and H{sub 2}-SiH{sub 4}, capacitively coupled rf discharges operated at typical device-production conditions, were investigated by quadrupole mass spectrometry. The production of disilane and trisilane and the depletion of silane and pressure change were measured during consecutive short discharges. Dissociation rate constants and branching ratios for higher-silane production are obtained from the time-dependent densities. The influence of suspended Si particles on stable-gas production is found to be negligible, by changing the duration of individual discharges and thereby the particle densities and sizes. We have also observed pyrolitic decay of disilane and trisilane at 200 deg. C, although this is negligible under normal reactor conditions.

  12. Elastic tunneling charge transport mechanisms in silicon quantum dots /SiO{sub 2} thin films and superlattices

    SciTech Connect (OSTI)

    Illera, S. Prades, J. D.; Cirera, A.

    2015-05-07

    The role of different charge transport mechanisms in Si/SiO{sub 2} structures has been studied. A theoretical model based on the Transfer Hamiltonian Formalism has been developed to explain experimental current trends in terms of three different elastic tunneling processes: (1) trap assisted tunneling; (2) transport through an intermediate quantum dot; and (3) direct tunneling between leads. In general, at low fields carrier transport is dominated by the quantum dots whereas, for moderate and high fields, transport through deep traps inherent to the SiO{sub 2} is the most relevant process. Besides, current trends in Si/SiO{sub 2} superlattice structure have been properly reproduced.

  13. Silicon nanocrystals in SiN{sub x}/SiO{sub 2} hetero-superlattices: The loss of size control after thermal annealing

    SciTech Connect (OSTI)

    Zelenina, A. Zacharias, M.; Sarikov, A.; Zhigunov, D. M.; Weiss, C.; Zakharov, N.; Werner, P.; López-Conesa, L.; Peiró, F.

    2014-06-28

    Superlattices containing 3 nm thick silicon rich silicon nitride sublayers and 3 nm and 10 nm thick SiO{sub 2} barriers were prepared by plasma enhanced chemical vapor deposition. Despite the as-prepared samples represented a well-kept multilayer structure with smooth interfaces, the high temperature annealing resulted in the total destruction of multilayer structure in the samples containing 3 nm SiO{sub 2} barriers. Energy-filtered transmission electron microscopy images of these samples indicated a silicon nanoclusters formation with sizes of 2.5–12.5 nm, which were randomly distributed within the structure. Although in the sample with 10 nm SiO{sub 2} barriers some fragments of the multilayer structure could be still observed after thermal annealing, nevertheless, the formation of large nanocrystals with diameters up to 10 nm was confirmed by dark field transmission electron microscopy. Thus, in contrast to the previously published results, the expected size control of silicon nanocrystals was lost. According to the FTIR results, the thermal annealing of SiN{sub x}/SiO{sub 2} superlattices led to the formation of silicon nanocrystals in mostly oxynitride matrix. Annealed samples demonstrated a photoluminescence peak at 885 nm related to the luminescence of silicon nanocrystals, as confirmed by time-resolved photoluminescence measurements. The loss of nanocrystals size control is discussed in terms of the migration of oxygen atoms from the SiO{sub 2} barriers into the silicon rich silicon nitride sublayers. A thermodynamic mechanism responsible for this process is proposed. According to this mechanism, the driving force for the oxygen migration is the gain in the configuration entropy related to the relative arrangements of oxygen and nitrogen atoms.

  14. Doped silicon nanocrystals from organic dopant precursor by a SiCl{sub 4}-based high frequency nonthermal plasma

    SciTech Connect (OSTI)

    Zhou, Shu; Ding, Yi; Nozaki, Tomohiro; Pi, Xiaodong

    2014-11-03

    Doped silicon nanocrystals (Si NCs) are of great interest in demanding low-cost nanodevices because of the abundance and nontoxicity of Si. Here, we demonstrate a cost-effective gas phase approach to synthesize phosphorous (P)-doped Si NCs in which the precursors used, i.e., SiCl{sub 4}, trimethyl phosphite (TMP), are both safe and economical. It is found that the TMP-enabled P-doping does not change the crystalline structure of Si NCs. The surface of P-doped Si NCs is terminated by both Cl and H. The Si–H bond density at the surface of P-doped Si NCs is found to be much higher than that of undoped Si NCs. The X-ray photoelectron spectroscopy and electron spin resonance results indicate that P atoms are doped into the substitutional sites of the Si-NC core and electrically active in Si NCs. Unintentional impurities, such as carbon contained in TMP, are not introduced into Si NCs.

  15. Temperature dependence of contact resistance for Au-Ti-Pd{sub 2}Si-n{sup +}-Si ohmic contacts subjected to microwave irradiation

    SciTech Connect (OSTI)

    Belyaev, A. E.; Boltovets, N. S.; Konakova, R. V. Kudryk, Ya. Ya.; Sachenko, A. V.; Sheremet, V. N.; Vinogradov, A. O.

    2012-03-15

    Based on a theoretical analysis of the temperature dependence of the contact resistance R{sub c} for an Au-Ti-Pd{sub 2}Si-n{sup +}-Si ohmic contact, a current-transfer mechanism explaining the experimentally observed increase in R{sub c} in the temperature range 100-380 K is proposed. It is shown that microwave treatment of such contacts results in a decrease in the spread of R{sub c} over the wafer and a decrease in the value of R{sub c} whilst retaining an increase in R{sub c} in the temperatures range 100-380 K.

  16. Epitaxial Cu{sub 2}ZnSnS{sub 4} thin film on Si (111) 4° substrate

    SciTech Connect (OSTI)

    Song, Ning; Liu, Fangyang; Huang, Yidan; Hao, Xiaojing E-mail: xj.hao@unsw.edu.au; Green, Martin A.; Young, Matthew; Erslev, Pete; Harvey, Steven P.; Teeter, Glenn E-mail: xj.hao@unsw.edu.au; Wilson, Samual

    2015-06-22

    To explore the possibility of Cu{sub 2}ZnSnS{sub 4} (CZTS)/Si based tandem solar cells, the heteroepitaxy of tetragonal Cu{sub 2}ZnSnS{sub 4} thin films on single crystalline cubic Si (111) wafers with 4° miscut is obtained by molecular beam epitaxy. The X-ray θ-2θ scan and selected area diffraction patterns of the CZTS thin films and Si substrates, and the high resolution transmission electron microscopy image of the CZTS/Si interface region demonstrate that the CZTS thin films are epitaxially grown on the Si substrates. A CZTS/Si P-N junction is formed and shows photovoltaic responses, indicating the promising application of epitaxial CZTS thin films on Si.

  17. Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN–based devices

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chan, Silvia; Mishra, Umesh K.; Tahhan, Maher; Liu, Xiang; Bisi, David; Gupta, Chirag; Koksaldi, Onur; Li, Haoran; Mates, Tom; DenBaars, Steven P.; et al

    2016-01-20

    In this study, we report on the growth and electrical characterization of (Al,Si)O dielectrics grown by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum, oxygen, and silane as precursors. The growth rates, refractive indices, and composition of (Al,Si)O films grown on Si(001) were determined from ellipsometry and XPS measurements. Crystallinity and electrical properties of (Al,Si)O films grown in situ on c-plane GaN were characterized using grazing incidence X-ray diffraction and capacitance–voltage with current–voltage measurements, respectively. Si concentration in the films was found to be tunable by varying the trimethylaluminum and/or oxygen precursor flows. The Si incorporation suppressed the formation of crystallinemore » domains, leading to amorphous films that resulted in reduced interfacial trap density, low gate leakage and ultra-low hysteresis in (Al,Si)O/n-GaN MOS-capacitors.« less

  18. Growth of selective tungsten films on self-aligned CoSi/sub 2/ by low pressure chemical vapor deposition

    SciTech Connect (OSTI)

    van der Putte, P.; Sadana, D.K.; Broadbent, E.K.; Morgan, A.E.

    1986-12-22

    The selective deposition of tungsten films onto CoSi/sub 2/ and onto Co by low pressure chemical vapor deposition and their material properties have been investigated with Auger electron spectroscopy, transmission electron microscopy, and Rutherford backscattering. When using WF/sub 6/ and H/sub 2/, uniformly thick tungsten films can be deposited onto CoSi/sub 2/ without substrate alteration. In patterned structures, however, void formation was found at the perimeters of CoSi/sub 2/ contacts to silicon, indicating encroachment of WF/sub 6/ down the edge of the silicide-Si interface. In WF/sub 6/ and Ar, the film thickness was limited to 10 nm and some Si was locally consumed from the upper part of the CoSi/sub 2/ film. Transmission electron diffraction showed evidence of Co/sub 2/Si formation in these areas.

  19. Incorporation of Catalytic Compounds in the Porosity of SiC Wall...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Incorporation of Catalytic Compounds in the Porosity of SiC Wall Flow Filters - 4 Way Catalyst and DeNOx Application examples Incorporation of Catalytic Compounds in the Porosity ...

  20. High Curie temperature of Ce-Fe-Si compounds with ThMn12 structure

    SciTech Connect (OSTI)

    Zhou, C; Pinkerton, FE; Herbst, JF

    2015-01-15

    We report the discovery of ternary CeFe(12-x)Si(x)compounds possessing the ThMn12 structure. The samples were prepared by melt spinning followed by annealing. In contrast to other known Ce Fe-based binary and ternary compounds, CeFe12-xSix compounds exhibit exceptionally high Curie temperatures whose values increase with added Si substitution. The highest T. = 583 K in CeFe10Si2 rivals that of the well-established Nd2Fe14B compound. We ascribe the T-c behavior to a combination of Si-induced 3d band structure changes and partial Ce3+ stabilization. (C) 2014 Published by Elsevier Ltd.

  1. Low-cost, high-efficiency solar cells utilizing GaAs-on-Si technology

    SciTech Connect (OSTI)

    Vernon, S.M. )

    1993-04-01

    This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, [approximately] 1 [times] 10[sup 5] cm[sup [minus]5], as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 [times]10[sup 7] cm[sup [minus]2]. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.

  2. Vehicle Technologies Office Merit Review 2015: Si Alloy Anode: Sudden Fade Challenge

    Broader source: Energy.gov [DOE]

    Presentation given by 3M at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about Si alloy anode: sudden fade challenge.

  3. Numerical design of SiC bulk crystal growth for electronic applications

    SciTech Connect (OSTI)

    Wejrzanowski, T.; Grybczuk, M.; Kurzydlowski, K. J.; Tymicki, E.

    2014-10-06

    Presented study concerns numerical simulation of Physical Vapor Transport (PVT) growth of bulk Silicon Carbide (SiC) crystals. Silicon Carbide is a wide band gap semiconductor, with numerous applications due to its unique properties. Wider application of SiC is limited by high price and insufficient quality of the product. Those problems can be overcame by optimizing SiC production methods. Experimental optimization of SiC production is expensive because it is time consuming and requires large amounts of energy. Numerical modeling allows to learn more about conditions inside the reactor and helps to optimize the process at much lower cost. In this study several simulations of processes with different reactor geometries were presented along with discussion of reactor geometry influence on obtained monocrystal shape and size.

  4. a-Si:H Grown by Hot-Wire CVD at Ultra-High Deposition Rates

    SciTech Connect (OSTI)

    Xu, Y.; Nelson, B. P.; Mahan, A. H.; Williamson, D. L.; Crandall, R. S.; Iwaniczko, E.; Wang, Q.

    2000-01-01

    We increase the deposition rate of growing hydrogenated amorphous-silicon (a-Si:H) by the hot-wire chemical vapor depositon (HWCVD) technique by adding filaments (two) and decreasing the filament(s) to substrate distance.

  5. Electronic and magnetic properties of Si substituted Fe3Ge

    SciTech Connect (OSTI)

    Shanavas, Kavungal Veedu; McGuire, Michael A.; Parker, David S.

    2015-09-23

    Using first principles calculations we studied the effect of Si substitution in the hexagonal Fe3Ge. We find the low temperature magnetic anisotropy in this system to be planar and originating mostly from the spin-orbit coupling in Fe-d states. Reduction of the unitcell volume reduces the in-plane magnetic anisotropy, eventually turning it positive which reorients the magnetic moments to the axial direction. We find that substituting Ge with the smaller Si ions also reduces the anisotropy, potentially enhancing the region of stability of the axial magnetization, which is beneficial for magnetic applications. Thus our experimental measurements on samples of Fe3Ge1–xSix confirm these predictions and show that substitution of about 6% of the Ge with Si increases by approximately 35 K the temperature range over which anisotropy is uniaxial.

  6. Ultrathin nanosheets of CrSiTe3. A semiconducting two-dimensional...

    Office of Scientific and Technical Information (OSTI)

    As a result, the ferromagnetic mono- and few-layer 2D CrSiTe3 indicated here should enable ... Type: Accepted Manuscript Journal Name: Journal of Materials Chemistry. C Additional ...

  7. Hydrothermal corrosion of SiC in LWR coolant environments in...

    Office of Scientific and Technical Information (OSTI)

    ... this phenomenon incited much interest in growing a thin carbon layer on the surface of SiC ... as a function of temperature and the crystal structure of the solid silica phase 30,32. ...

  8. Blue photoluminescence enhancement in laser-irradiated 6H-SiC at room temperature

    SciTech Connect (OSTI)

    Wu, Yan; Ji, Lingfei Lin, Zhenyuan; Jiang, Yijian; Zhai, Tianrui

    2014-01-27

    Blue photoluminescence (PL) of 6H-SiC irradiated by an ultraviolet laser can be observed at room temperature in dark condition. PL spectra with Gaussian fitting curve of the irradiated SiC show that blue luminescence band (?440?nm) is more pronounced than other bands. The blue PL enhancement is the combined result of the improved shallow N-donor energy level and the unique surface state with Si nanocrystals and graphene/Si composite due to the effect of photon energy input by the short-wavelength laser irradiation. The study can provide a promising route towards the preparation of well-controlled blue photoluminescence material for light-emitting devices.

  9. Breakthrough in Power Electronics from SiC: May 25, 2004 - May 31, 2005

    SciTech Connect (OSTI)

    Marckx, D. A.

    2006-03-01

    This report explores the premise that silicon carbide (SiC) devices would reduce substantially the cost of energy of large wind turbines that need power electronics for variable speed generation systems.

  10. Local environment of Mn in Mn delta-doped Si layers

    SciTech Connect (OSTI)

    Xiao, Q.F.; Kahwaji, S.; Monchesky, T.L.; Gordon, R.A.; Crozier, E.D.

    2009-11-09

    Dilute magnetic semiconductors combine both magnetic ordering and semiconducting behaviour, leading to potential spintronic applications. Silicon containing dilute Mn impurities is a potential dilute magnetic semiconductor. We have grown Mn delta-doped films by deposition of 0.7 of a monolayer of Mn on Si(001) by molecular beam epitaxy and capping the film with Si. The magnetic properties are likely sensitive to the distribution of Mn on substitutional or interstitial sites and the formation of metallic precipitates. We have used polarization-dependent XAFS to examine the local structure. We compare to a thicker MnSi film grown on Si(111) and also examine the influence of lead on the manganese environment when used as a surfactant in the growth process.

  11. The synthesis of NbSi{sub 2} by mechanical alloying

    SciTech Connect (OSTI)

    Lou, T.; Fan, G.; Ding, B.; Hu, Z.

    1997-05-01

    The stoichiometric intermetallic compound NbSi{sub 2} has been synthesized by mechanical alloying (MA) elemental Nb and Si powders. The alloying process has been investigated by means of x-ray diffraction (XRD) and differential scanning calorimetry (DSC). It was found that the formation of the Nb{sub 2}Si intermetallic compound occurs abruptly after 65 min of milling without any interruptions during the alloying process. However, short interruptions at a 5 min interval during ball milling result in a gradual reaction for the formation of the NbSi{sub 2} compound as well as a new metastable bcc structured solid solution. We conclude that the temperature rise during mechanical alloying plays an important role in initiating the abrupt reaction after an incubation milling time. {copyright} {ital 1997 Materials Research Society.}

  12. Effect of radiation on properties of ENR/PVC/SiO{sub 2} membrane

    SciTech Connect (OSTI)

    Ismail, Nur Farahein Hadina; Abdullah, Ibrahim; Daik, Rusli; Ahmad, Ishak; Jamil, Suzereen; Lazim, Mohammad Azwan Mat; Othaman, Rizafizah

    2015-09-25

    In this study epoxidised natural rubber (ENR)/polyvinyl chloride (PVC) matrix was prepared by melt blending. The matrix was swelled in THF and silica as a filler was introduced to the solution to generate pore formation. The ENR/PVC/10 % SiO{sub 2} membrane was prepared using a casting knife technique. The membrane was irradiated using 2 MeV electron beam accelerator at a dose range of 10-100 kGy. The effect of electron beam irradiation of the membrane was studied by undergo characterization of Scanning electron microscope (SEM) and Fourier transform infra red (FTIR). Morphological studies showed that pores generated in ENR/PVC/10 % SiO{sub 2} membrane increased with the dosage of radiation. While FTIR analysis showed the presence of peak of Si-O-Si asymmetric stretching at 834 cm{sup −1}. There are no significant changes in the functional group before and after radiation.

  13. Equations of state in the Fe-FeSi system at high pressures and...

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Search Results Journal Article: Equations of state in the Fe-FeSi system ... Country of Publication: United States Language: ENGLISH Word Cloud More Like This Full ...

  14. Tailoring of a metastable material: alfa-FeSi2 thin film

    SciTech Connect (OSTI)

    Cao, Guixin; Singh, David J; Zhang, Xiaoguang; Samolyuk, German D; Qiao, Liang; Parish, Chad M; Ke, Jin; Zhang, Yanwen; Guo, Hangwen; Tang, Siwei; Wang, Wenbin; Yi, Jieyu; Cantoni, Claudia; Siemons, Wolter; Payzant, E Andrew; Biegalski, Michael D; Ward, Thomas Zac; Sales, Brian C; Mandrus, D.; Stocks, George Malcolm; Gai, Zheng

    2015-01-01

    The epitaxially stabilized metallic -FeSi2 thin films on Si(001) were grown using pulsed laser deposition. While the bulk material of -FeSi2 is a high temperature metastable phase and nonmagnetic, the thin film is stabilized at room temperature and shows unusual electronic transport and magnetic properties due to strain modification. The transport renders two different conducting states with a strong crossover at 50 K accompanied by an onset of ferromagnetism as well as a substantial magnetocaloric effect and magnetoresistance. These experimental results are discussed in terms of the unusual electronic structure of -FeSi2 obtained within density functional calculations and Boltzmann transport calculations with and without strain. Our findings provide an example of a tailored material with interesting physics properties for practical applications.

  15. Time constant of defect relaxation in ion-irradiated 3C-SiC

    SciTech Connect (OSTI)

    Wallace, J. B.; Bayu Aji, L. B.; Kucheyev, S. O.; Shao, L.

    2015-05-18

    Above room temperature, the buildup of radiation damage in SiC is a dynamic process governed by the mobility and interaction of ballistically generated point defects. Here, we study the dynamics of radiation defects in 3C-SiC bombarded at 100 °C with 500 keV Ar ions, with the total ion dose split into a train of equal pulses. Damage–depth profiles are measured by ion channeling for a series of samples irradiated under identical conditions except for different durations of the passive part of the beam cycle. Results reveal an effective defect relaxation time constant of ∼3 ms (for second order kinetics) and a dynamic annealing efficiency of ∼40% for defects in both Si and C sublattices. This demonstrates a crucial role of dynamic annealing at elevated temperatures and provides evidence of the strong coupling of defect accumulation processes in the two sublattices of 3C-SiC.

  16. U.S. Department of Energy Accident Resistant SiC Clad Nuclear Fuel Development

    Broader source: Energy.gov [DOE]

    A significant effort is being placed on silicon carbide ceramic matrix composite (SiC CMC) nuclear fuel cladding by Light Water Reactor Sustainability (LWRS) Advanced Light Water Reactor Nuclear...

  17. Vehicle Technologies Office Merit Review 2014: Development of SiC Large Tapered Crystal Growth

    Office of Energy Efficiency and Renewable Energy (EERE)

    Presentation given by NASA at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about development of SiC large tapered crystal...

  18. Reducing c-Si Module Operating Temperature via PV Packaging Components...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    More Documents & Publications Agenda for the PV Module Reliability Workshop, February 26 - 27 2013, Golden, Colorado PID Failure of c-Si and Thin-Film Modules and Possible ...

  19. Crystallization from high temperature solutions of Si in Cu/Al solvent

    DOE Patents [OSTI]

    Ciszek, Theodore F.; Wang, Tihu

    1996-01-01

    A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 3.times.10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850.degree. to about 1100.degree. C. in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.

  20. Crystallization from high temperature solutions of Si in Cu/Al solvent

    DOE Patents [OSTI]

    Ciszek, T.F.; Wang, T.

    1996-08-13

    A liquid phase epitaxy method is disclosed for forming thin crystalline layers of device quality silicon having less than 3{times}10{sup 16} Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850 to about 1100 C in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution. 3 figs.

  1. Probing limits of STM field emission patterned Si:P $\\delta$...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Probing limits of STM field emission patterned Si:P delta-doped devices. Citation Details In-Document Search Title: Probing limits of STM field emission ...

  2. Tailoring of a metastable material: alfa-FeSi2 thin film

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Cao, Guixin; Singh, David J; Zhang, Xiaoguang; Samolyuk, German D; Qiao, Liang; Parish, Chad M; Ke, Jin; Zhang, Yanwen; Guo, Hangwen; Wang, Wenbin; et al

    2015-01-01

    The epitaxially stabilized metallic -FeSi2 thin films on Si(001) were grown using pulsed laser deposition. While the bulk material of -FeSi2 is a high temperature metastable phase and nonmagnetic, the thin film is stabilized at room temperature and shows unusual electronic transport and magnetic properties due to strain modification. The transport renders two different conducting states with a strong crossover at 50 K accompanied by an onset of ferromagnetism as well as a substantial magnetocaloric effect and magnetoresistance. These experimental results are discussed in terms of the unusual electronic structure of -FeSi2 obtained within density functional calculations and Boltzmann transportmore » calculations with and without strain. Our findings provide an example of a tailored material with interesting physics properties for practical applications.« less

  3. Phase Formation and Texture of Nickel Silicides on Si1-xCx Epilayers

    SciTech Connect (OSTI)

    K De Keyser; B De Schutter; C Detavernier; V Machkaoutsan; M Bauer; S Thomas; J Jordan Sweet; C Lavoie

    2011-12-31

    We investigated the phase formation and texture of nickel silicides formed during the reaction of 10 nm sputter deposited nickel with Si1-xCx epitaxial layers on Si(1 0 0) substrates, having a carbon content between 0 and 2.5 atomic percent. It was found that both the formation temperature as well as the texture of the metal-rich phases is influenced by the amount of carbon in the Si1-xCx layer. To determine the influence of the location of the carbon during the silicidation process we also investigated the reaction of 10 nm nickel on Si(1 0 0) substrates, where carbon was either alloyed in the nickel layer or deposited as an interlayer at the interface between the nickel and the substrate. Depending on the location of the carbon, a different thermal stability of the layer was found.

  4. Spontaneously intermixed Al-Mg barriers enable corrosion-resistant Mg/SiC multilayer coatings

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Soufli, Regina; Fernandez-Perea, Monica; Baker, Sherry L.; Robinson, Jeff C.; Alameda, Jennifer; Walton, Christopher C.

    2012-07-24

    Magnesium/silicon carbide (Mg/SiC) has the potential to be the best-performing reflective multilayercoating in the 25–80 nm wavelength region but suffers from Mg-related corrosion, an insidious problem which completely degrades reflectance. We have elucidated the origins and mechanisms of corrosion propagation within Mg/SiC multilayers. Based on our findings, we have demonstrated an efficient and simple-to-implement corrosion barrier for Mg/SiC multilayers. In conclusion, the barrier consists of nanometer-scale Mg and Al layers that intermix spontaneously to form a partially amorphous Al-Mg layer and is shown to prevent atmospheric corrosion while maintaining the unique combination of favorable Mg/SiC reflective properties.

  5. Equation of state and phase diagram of Fe-16Si alloy as a candidate...

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Search Results Journal Article: Equation of state and phase diagram of Fe-16Si alloy as a candidate component of Earths core Citation Details In-Document Search ...

  6. Selective growth of Pb islands on graphene/SiC buffer layers

    SciTech Connect (OSTI)

    Liu, X. T.; Miao, Y. P.; Ma, D. Y.; Hu, T. W.; Ma, F. E-mail: kwxu@mail.xjtu.edu.cn; Chu, Paul K.; Xu, K. W. E-mail: kwxu@mail.xjtu.edu.cn

    2015-02-14

    Graphene is fabricated by thermal decomposition of silicon carbide (SiC) and Pb islands are deposited by Pb flux in molecular beam epitaxy chamber. It is found that graphene domains and SiC buffer layer coexist. Selective growth of Pb islands on SiC buffer layer rather than on graphene domains is observed. It can be ascribed to the higher adsorption energy of Pb atoms on the 6?(3) reconstruction of SiC. However, once Pb islands nucleate on graphene domains, they will grow very large owing to the lower diffusion barrier of Pb atoms on graphene. The results are consistent with first-principle calculations. Since Pb atoms on graphene are nearly free-standing, Pb islands grow in even-number mode.

  7. SbSI nanocrystal formation in AsSbSI glass under laser beam

    SciTech Connect (OSTI)

    Azhniuk, Yu.M.; Stoyka, V.; Petryshynets, I.; Rubish, V.M.; Guranich, O.G.; Gomonnai, A.V.; Zahn, D.R.T.

    2012-06-15

    Highlights: ? AsSbSI glasses are obtained by co-melting of As{sub 2}S{sub 3} and SbSI. ? The glass structure and composition are confirmed by SEM, EDX, and Raman studies. ? Laser-induced crystallization of SbSI from the glass is observed by Raman spectroscopy. -- Abstract: AsSbSI glasses are obtained by co-melting of As{sub 2}S{sub 3} and SbSI in a broad compositional interval. Their structure and composition are confirmed by the studies of scanning electron microscopy, energy dispersive X-ray spectroscopy, and micro-Raman scattering. Laser-induced crystallization of SbSI crystallites from the glass matrix is observed in the course of the micro-Raman measurement as a result of local laser beam heating.

  8. PROJECT PROFILE: Overcoming Bottlenecks to Low-Cost, High-Efficiency Si PV

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and Industrially Relevant, Ion Implanted, Interdigitated Back Passivated Contact Cell Development | Department of Energy Overcoming Bottlenecks to Low-Cost, High-Efficiency Si PV and Industrially Relevant, Ion Implanted, Interdigitated Back Passivated Contact Cell Development PROJECT PROFILE: Overcoming Bottlenecks to Low-Cost, High-Efficiency Si PV and Industrially Relevant, Ion Implanted, Interdigitated Back Passivated Contact Cell Development Funding Opportunity: SuNLaMP SunShot

  9. Notes on the plasma resonance peak employed to determine doping in SiC

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Engelbrecht, J. A. A.; van Rooyen, I. J.; Henry, A.; Janzen, E.; Sephton, B.

    2015-07-23

    In this study, the doping level of a semiconductor material can be determined using the plasma resonance frequency to obtain the carrier concentration associated with doping. This paper provides an overview of the procedure for the three most common polytypes of SiC. Results for 3C-SiC are presented and discussed. In phosphorus doped samples analysed, it is submitted that the 2nd plasma resonance cannot be detected due to high values of the free carrier damping constant γ.

  10. HD Applications of Significantly Downsized SI Engines Using Alcohol DI for

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Knock Avoidance | Department of Energy Applications of Significantly Downsized SI Engines Using Alcohol DI for Knock Avoidance HD Applications of Significantly Downsized SI Engines Using Alcohol DI for Knock Avoidance Direct injection of a second fuel (ethanol or methanol) is explored as a means of avoiding knock in turbocharged, high-compression ratio spark-ignited engines that could replace diesels in certain vocational applications. deer08_blumberg.pdf (163.75 KB) More Documents &

  11. SiC-dopped MCM-41 materials with enhanced thermal and hydrothermal stabilities

    SciTech Connect (OSTI)

    Wang, Yingyong; Jin, Guoqiang; Tong, Xili; Guo, Xiangyun

    2011-11-15

    Graphical abstract: Novel SiC-dopped MCM-41 materials were synthesized by adding silicon carbide suspension in the molecular sieve precursor solvent followed by in situ hydrothermal synthesis. The dopped materials have a wormhole-like mesoporous structure and exhibit enhanced thermal and hydrothermal stabilities. Highlights: {yields} SiC-dopped MCM-41 was synthesized by in situ hydrothermal synthesis of molecular sieve precursor combined with SiC. {yields} The dopped MCM-41 materials show a wormhole-like mesoporous structure. {yields} The thermal stability of the dopped materials have an increment of almost 100 {sup o}C compared with the pure MCM-41. {yields} The hydrothermal stability of the dopped materials is also better than that of the pure MCM-41. -- Abstract: SiC-dopped MCM-41 mesoporous materials were synthesized by the in situ hydrothermal synthesis, in which a small amount of SiC was added in the precursor solvent of molecular sieve before the hydrothermal treatment. The materials were characterized by X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, N{sub 2} physical adsorption and thermogravimetric analysis, respectively. The results show that the thermal and hydrothermal stabilities of MCM-41 materials can be improved obviously by incorporating a small amount of SiC. The structure collapse temperature of SiC-dopped MCM-41 materials is 100 {sup o}C higher than that of pure MCM-41 according to the differential scanning calorimetry analysis. Hydrothermal treatment experiments also show that the pure MCM-41 will losses it's ordered mesoporous structure in boiling water for 24 h while the SiC-dopped MCM-41 materials still keep partial porous structure.

  12. Nano-/micro metallic wire synthesis on Si substrate and their characterization

    SciTech Connect (OSTI)

    Kaur, Jaskiran Kaur, Harmanmeet Singh, Surinder; Kanjilal, Dinakar; Chakarvarti, Shiv Kumar

    2014-04-24

    Nano-/micro wires of copper are grown on semiconducting Si substrate using the template method. It involves the irradiation of 8 um thick polymeric layer coated on Si with150 MeV Ni ion beam at a fluence of 2E8. Later, by using the simple technique of electrodeposition, copper nano-/micro wires were grown via template synthesis. Synthesized wires were morphologically characterized using SEM and electrical characterization was carried out by finding I-V plot.

  13. Phase Stability for the Pd-Si System. First-Principles, Experiments, and Solution-Based Modeling

    SciTech Connect (OSTI)

    Zhou, S. H.; Huo, Y.; Napolitano, Ralph E.

    2015-11-05

    Relative stabilities of the compounds in the binary Pd-Si system were assessed using first-principles calculations and experimental methods. Calculations of lattice parameters and enthalpy of formation indicate that Pd5Si-μ, Pd9Si2-α, Pd3 Si-β, Pd2 Si-γ, and PdSi-δ are the stable phases at 0 K (-273 °C). X-ray diffraction analyses (XRD) and electron probe microanalysis (EPMA) of the as-solidified and heat-treated samples support the computational findings, except that the PdSi-δ phase was not observed at low temperature. Considering both experimental data and first-principles results, the compounds Pd 5 Si-μ, Pd9 Si2-α, Pd3Si-β, and Pd2Si-γ are treated as stable phases down to 0 K (-273 °C), while the PdSi-δ is treated as being stable over a limited range, exhibiting a lower bound. Using these findings, a comprehensive solution-based thermodynamic model is formulated for the Pd-Si system, permitting phase diagram calculation. Moreover, the liquid phase is described using a three-species association model and other phases are treated as solid solutions, where a random substitutional model is adopted for Pd-fcc and Si-dia, and a two-sublattice model is employed for Pd5Si-μ, Pd9Si2-α, Pd3Si-β, Pd2Si-γ, and PdSi-δ. Model parameters are fitted using available experimental data and first-principles data, and the resulting phase diagram is reported over the full range of compositions.

  14. High-temperature corrosion of Nicalon reg sign /SiC composites

    SciTech Connect (OSTI)

    Lowden, R.A.; James, R.D.

    1991-08-01

    The elevated-temperature stability of Nicalon{reg sign} (Nippon Carbon Company, Tokyo, Japan)/SiC composites with a graphitic carbon interface layer in oxidizing and simulated fossil fuel environments was investigated. Composite specimens with and without an external SiC surface coating were oxidizing in air and exposed to a variety of combustion environments at a temperature of 1273 K. A burner rig furnace was constructed for simulating corrosive fossil fuel environments containing water vapor, sulfur, and sodium. The mechanical properties of unprotected Nicalon{reg sign}/SiC specimens were degraded after short periods of exposure, due to the oxidation of the carbon interface coating. Longer exposures resulted in the oxidation of the fibers and matrix to form silica, which with time bonded the components together and produced brittle behavior. Combustion environments hastened the embrittlement of composites without an external SiC coating. Conversely, the specimens protected by a chemical vapor deposition (CVD) SiC surface coating exhibited only small decreases in strength after oxidation or corrosion in combustion environments. The SiC layer sealed off the surface of the composites, protecting the exposed fibers' ends, and thus prevented oxidation at the fiber-matrix interface. 26 refs., 11 figs., 1 tab.

  15. U.S. Department of Energy Accident Resistant SiC Clad Nuclear Fuel Development

    SciTech Connect (OSTI)

    George W. Griffith

    2011-10-01

    A significant effort is being placed on silicon carbide ceramic matrix composite (SiC CMC) nuclear fuel cladding by Light Water Reactor Sustainability (LWRS) Advanced Light Water Reactor Nuclear Fuels Pathway. The intent of this work is to invest in a high-risk, high-reward technology that can be introduced in a relatively short time. The LWRS goal is to demonstrate successful advanced fuels technology that suitable for commercial development to support nuclear relicensing. Ceramic matrix composites are an established non-nuclear technology that utilizes ceramic fibers embedded in a ceramic matrix. A thin interfacial layer between the fibers and the matrix allows for ductile behavior. The SiC CMC has relatively high strength at high reactor accident temperatures when compared to metallic cladding. SiC also has a very low chemical reactivity and doesn't react exothermically with the reactor cooling water. The radiation behavior of SiC has also been studied extensively as structural fusion system components. The SiC CMC technology is in the early stages of development and will need to mature before confidence in the developed designs can created. The advanced SiC CMC materials do offer the potential for greatly improved safety because of their high temperature strength, chemical stability and reduced hydrogen generation.

  16. A SiC MOSFET Based Inverter for Wireless Power Transfer Applications

    SciTech Connect (OSTI)

    Onar, Omer C; Chinthavali, Madhu Sudhan; Campbell, Steven L; Ning, Puqi; White, Cliff P; Miller , John M.

    2014-01-01

    In a wireless power transfer (WPT) system, efficiency of the power conversion stages is crucial so that the WPT technology can compete with the conventional conductive charging systems. Since there are 5 or 6 power conversion stages, each stage needs to be as efficient as possible. SiC inverters are crucial in this case; they can handle high frequency operation and they can operate at relatively higher temperatures resulting in reduces cost and size for the cooling components. This study presents the detailed power module design, development, and fabrication of a SiC inverter. The proposed inverter has been tested at three center frequencies that are considered for the WPT standardization. Performance of the inverter at the same target power transfer level is analyzed along with the other system components. In addition, another SiC inverter has been built in authors laboratory by using the ORNL designed and developed SiC modules. It is shown that the inverter with ORNL packaged SiC modules performs simular to that of the inverter having commercially available SiC modules.

  17. Controlled thermal decomposition of NaSi to derive silicon clathrate compounds

    SciTech Connect (OSTI)

    Horie, Hiro-omi; Kikudome, Takashi; Teramura, Kyosuke; Yamanaka, Shoji

    2009-01-15

    Formation conditions of two types of sodium containing silicon clathrate compounds were determined by the controlled thermal decomposition of sodium monosilicide NaSi under vacuum. The decomposition began at 360 deg. C. Much higher decomposition temperatures and the presence of sodium metal vapor were favorable for the formation of type I clathrate compound Na{sub 8}Si{sub 46}. Type II clathrate compound Na{sub x}Si{sub 136} was obtained as a single phase at a decomposition temperature <440 deg. C under the condition without sodium metal vapor. The type I clathrate compound was decomposed to crystalline Si above 520 deg. C. The type II clathrate compound was thermally more stable, and retained at least up to 550 deg. C in vacuum. - Graphical Abstract: The optimal condition to prepare type II silicon clathrate Na{sub x}Si{sub 136} with minimal contamination of the type I phase is proposed. The starting NaSi should be thermally decomposed below 440 deg. C, and the rapid removal of Na vapor evolved is essentially important.

  18. Deep levels generated by thermal oxidation in p-type 4H-SiC

    SciTech Connect (OSTI)

    Kawahara, Koutarou; Suda, Jun; Kimoto, Tsunenobu

    2013-01-21

    Thermal oxidation is an effective method to reduce deep levels, especially the Z{sub 1/2}-center (E{sub C}-0.67 eV), which strongly suppresses carrier lifetimes in n-type 4H-SiC epilayers. The oxidation, however, simultaneously generates other deep levels, HK0 (E{sub V}+0.79 eV) and HK2 (E{sub V}+0.98 eV) centers, within the lower half of the bandgap of SiC, where the HK0 center is a dominant deep level with a concentration of about 1 Multiplication-Sign 10{sup 13} cm{sup -3} after oxidation. By comparing deep levels observed in three sets of p-type 4H-SiC: oxidized, electron-irradiated, and C{sup +}- or Si{sup +}-implanted samples, we find that the HK0 and HK2 centers are complexes including carbon interstitials such as the di-carbon interstitial or di-carbon antisite. Other defects observed in p-type 4H-SiC after electron irradiation or after C{sup +}/Si{sup +} implantation are also studied.

  19. Real time synchrotron X-ray observations of solidification in hypoeutectic AlSi alloys

    SciTech Connect (OSTI)

    Nogita, Kazuhiro [Nihon Superior Centre for the Manufacture of Electronic Materials, The University of Queensland, Brisbane, QLD 4072 (Australia); School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, QLD 4072 (Australia); Yasuda, Hideyuki [Department of Adaptive Machine Systems, Osaka University, Suita, Osaka, 565-0871 (Japan); Prasad, Arvind [School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, QLD 4072 (Australia); McDonald, Stuart D., E-mail: s.mcdonald1@uq.edu.au [Nihon Superior Centre for the Manufacture of Electronic Materials, The University of Queensland, Brisbane, QLD 4072 (Australia); School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, QLD 4072 (Australia); Nagira, Tomoya; Nakatsuka, Noriaki [Department of Adaptive Machine Systems, Osaka University, Suita, Osaka, 565-0871 (Japan); Uesugi, Kentaro [Japan Synchrotron Radiation Research Institute, SPring-8, Sayo, Hyogo, 679-5198 (Japan); StJohn, David H. [School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, QLD 4072 (Australia)

    2013-11-15

    This paper demonstrates how recent advances in synchrotron technology have allowed for the real-time X-ray imaging of solidification in AlSi alloys, despite the small difference in atomic number of these elements. The experiments performed at the SPring-8 synchrotron, involved imaging the solidification of Al1wt.%Si and Al4wt.%Si alloys under a low-temperature gradient and a cooling rate of around 0.3 C/s. The nucleation and growth of the primary aluminum grains as well as the onset of eutectic solidification were clearly observed. In the alloys containing Al4wt.%Si, contrast was sufficient to characterize the nucleation rate and growth velocity of the aluminum grains. The importance of improving observation of solidification in the AlSi system by increasing the time resolution during critical events is discussed. - Highlights: A synchrotron technique was used to observe solidification of Al-Si alloys. Nucleation, coarsening, and the onset of eutectic solidification were observed. Images captured are suitable for quantitative analysis. The resolution that was obtained should be possible for most aluminum alloys.

  20. Electronic band structure and Kondo coupling in YbRh2Si2

    SciTech Connect (OSTI)

    Wigger, G.A.

    2010-04-15

    The electronic band structure of YbRh2Si2 is calculated in a relativistic framework including correlation corrections and magnetization of the Yb ion and compared to detailed angle-resolved photoemission spectra. The photoemission spectra for LuRh2Si2 are used as reference to identify electronic bands with no f symmetry. The calculated band structure manifests a 4f13 spin-polarized configuration leaving the unoccupied state at 1.4eV above the Fermi energy. At the band theory level, the 4f bands are located far below the Fermi level and the anisotropic Coulomb interaction within the 4f shell spreads the multilevel into broader 4f complexes below -2.5eV . The photoemission spectra obtained on YbRh2Si2 show a clear f -multilevel splitting into j=7/2 and 5/2 excitations. The interaction of the 4f7/2 levels close to the Fermi energy with two conduction bands shows visible hybridization gaps of 45 and 80meV, respectively. We discuss the origin of these excitations and provide an analysis according to Anderson's single-impurity model with parameters suggested by the band-structure calculation and the photoemission spectra. Both experiment and theory indicate nearly identical Fermi surfaces for LuRh2Si2 and YbRh2Si2 . The valency of Yb in YbRh2Si2 is estimated to be close to +3.

  1. Chemical pressure tuning of URu?Si? via isoelectronic substitution of Ru with Fe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Das, Pinaki; Kanchanavatee, N.; Helton, J. S.; Huang, K.; Baumbach, R. E.; Bauer, E. D.; White, B. D.; Burnett, V. W.; Maple, M. B.; Lynn, J. W.; et al

    2015-02-01

    We have used specific heat and neutron diffraction measurements on single crystals of URu2xFexSi? for Fe concentrations x ? 0.7 to establish that chemical substitution of Ru with Fe acts as chemical pressure Pch as previously proposed by Kanchanavatee et al. [Phys. Rev. B 84, 245122 (2011)] based on bulk measurements on polycrystalline samples. Notably, neutron diffraction reveals a sharp increase of the uranium magnetic moment at x = 0.1, reminiscent of the behavior at the hidden order to large moment antiferromagnetic (LMAFM) phase transition observed at a pressure Px ? 0.5-0.7 GPa in URu?Si?. Using the unit cell volumemoredetermined from our measurements and an isothermal compressibility ?T = 5.210? GPa? for URu?Si?, we determine the chemical pressure Pch in URu2?xFexSi? as a function of x. The resulting temperature T-chemical pressure Pch phase diagram for URu2?xFexSi? is in agreement with the established temperature T-external pressure P phase diagram of URu?Si?.less

  2. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect (OSTI)

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  3. Manufacturing of SiCp Reinforced Magnesium Composite Tubes by Hot Extrusion Processes

    SciTech Connect (OSTI)

    Hwang, Yeong-Maw; Huang, Song-Jeng; Huang, Yu-San

    2011-05-04

    Magnesium alloys have higher specific strength compared with other metals, such as aluminum, copper and steel. Nevertheless, their ductility is still not good for further metal forming and their strength is not large enough for real structure applications. The aim of this paper is to develop magnesium alloy composite tubes reinforced with SiC particulates by the stir-casting method and hot extrusion processes. At first, AZ61/SiCp composite ingots reinforced with 5 wt% SiC particulates are fabricated by the melt-stirring technique. Then, finite element simulations are conducted to analyze the plastic flow of magnesium alloy AZ61 within the die and the temperature distribution of the products. AZ61/SiCp composite tubes are manufactured by hot extrusion using a specially designed die-set for obtaining uniform thickness distribution tubes. Finally, the mechanical properties of the reinforced AZ61/SiCp composite and Mg alloy AZ61 tubes are compared with those of the billets to manifest the advantages of extrusion processes and reinforcement of SiC particulates. The microstructures of the billet and extruded tubes are also observed. Through the improvement of the strength of the tube product, its life cycle can be extended and the energy consumption can be reduced, and eventually the environmental sustainability is achieved.

  4. Formation of PtSi Schottky barrier MOSFETs using plasma etching

    SciTech Connect (OSTI)

    Woo, Young Min; Hwang, Wan Sik; Yoo, Won Jong

    2015-03-15

    PtSi Schottky barrier (SB) MOSFETs were fabricated and their device performance was characterized. PtSi was selected instead of NiSi to form the p-type SB junction since such a configuration would be easy to fabricate through SF{sub 6} based plasma etching. The addition of He-O{sub 2} in SF{sub 6} decreases the etching rate of PtSi while the etching rate of Pt remains unchanged. The retardation in the etching rate of PtSi in He-O{sub 2}/SF{sub 6} is attributed to the formation of a metal oxide on the etched PtSi surface, as evidenced by the x-ray photoelectron spectroscopy results. Optical emission spectroscopy was conducted to establish the endpoint where the wavelength from the feed gas was traced instead of tracing the etching by-products since the by-products have little association with the plasma reaction. The I{sub DS}V{sub DS} curves at various V{sub G}V{sub TH} indicate that plasma etching resulted in the successful removal of the Pt on the sidewall region, with negligible damage to the S/D area.

  5. Synthesis, structure and chemical bonding of CaFe{sub 2−x}Rh{sub x}Si{sub 2} (x=0, 1.32, and 2) and SrCo{sub 2}Si{sub 2}

    SciTech Connect (OSTI)

    Hlukhyy, Viktor Hoffmann, Andrea V.; Fässler, Thomas F.

    2013-07-15

    The finding of superconductivity in Ba{sub 0.6}K{sub 0.4}Fe{sub 2}As{sub 2} put the attention on the investigation of compounds that crystallize with ThCr{sub 2}Si{sub 2} structure type such as AT{sub 2}X{sub 2} (A=alkali/alkaline earth/rare earth element; T=transition metal and X=element of the 13–15th group). In this context the silicides CaFe{sub 2}Si{sub 2}, CaFe{sub 0.68(6)}Rh{sub 1.32(6)}Si{sub 2}, CaRh{sub 2}Si{sub 2} and SrCo{sub 2}Si{sub 2} have been synthesized by reaction of the elements under an argon atmosphere. Single crystals were obtained by special heat treatment in welded niobium/tantalum ampoules. The compounds were investigated by means of powder and single crystal X-ray diffraction. All compounds crystallize in the ThCr{sub 2}Si{sub 2}-type structure with space group I4/mmm (No. 139): a=3.939(1) Å, c=10.185(1) Å, R{sub 1}=0.045, 85 F{sup 2} values, 8 variable parameters for CaFe{sub 2}Si{sub 2}; a=4.0590(2) Å, c=9.9390(8) Å, R{sub 1}=0.030, 90 F{sup 2} values, 10 variable parameters for CaFe{sub 0.68(6)}Rh{sub 1.32(6)}Si{sub 2}; a=4.0695(1) Å, c=9.9841(3) Å, R{sub 1}=0.031, 114 F{sup 2} values, 9 variable parameters for CaRh{sub 2}Si{sub 2}; and a=3.974(1) Å, c=10.395(1) Å, R{sub 1}=0.036, 95 F{sup 2} values, 8 variable parameters for SrCo{sub 2}Si{sub 2}. The structure of SrCo{sub 2}Si{sub 2} contains isolated [Co{sub 2}Si{sub 2}]{sup 2−} 2D-layers in the ab-plane whereas in CaFe{sub 2−x}Rh{sub x}Si{sub 2} the [T{sub 2}Si{sub 2}] layers (T=Fe and Rh) are interconnected along the c-axis via Si3Si bonds resulting in a three-dimentional (3D) [T{sub 2}Si{sub 2}]{sup 2−} polyanions and therefore belong to the so-called collapsed form of the ThCr{sub 2}Si{sub 2}-type structure. The SrCo{sub 2}Si{sub 2} and CaRh{sub 2}Si{sub 2} are isoelectronic to the parent 122 iron–pnictide superconductors AeFe{sub 2}As{sub 2} (Ae=alkaline earth elements), whereas CaFe{sub 2}Si{sub 2} is a full substituted variant (As/Si) of CaFe{sub 2}As{sub 2

  6. K*(892)⁰ and K̄*(892)⁰ production in central Pb + Pb, Si + Si, C + C, and inelastic p + p collisions at 158A GeV

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Anticic, T.; Baatar, B.; Barna, D.; Bartke, J.; Beck, H.; Betev, L.; Białkowska, H.; Blume, C.; Bogusz, M.; Boimska, B.; et al

    2011-12-13

    Production of the K*(892)0 and K̄*(892)⁰ resonances was studied via their K⁺π⁻ and K⁻π⁺ decay modes in central Pb+Pb, Si+Si, C+C, and inelastic p+p collisions at 158A GeV(√(sNN)=17.3 GeV) with the NA49 detector at the CERN SPS. Transverse momentum and rapidity distributions were measured and total yields were estimated. The yield of K* exceeds that of K̄* by about a factor of two in nucleus-nucleus reactions. The total yield ratios ⟨K*⟩/⟨K+⟩ and ⟨K̄*⟩/⟨K-⟩ are strongly suppressed in central Pb+Pb compared to p+p, C+C, and Si+Si collisions, in agreement with the expected attenuation of these short-lived resonance states in the hadronicmore » phase of the expanding fireball. The UrQMD model, although incorporating such a scenario, does not provide a quantitative description of the experimental results. The statistical hadron gas model assuming the same freeze-out parameters for stable hadrons and resonances overestimates the ⟨K*⟩/⟨K⟩ ratios in central Pb+Pb collisions by about a factor of 2.5.« less

  7. Fabrication and characterization of Al{sub 2}O{sub 3} /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

    SciTech Connect (OSTI)

    Zhang, Ruiying; Zhu, Jian; Zhang, Zhen; Wang, Yanyan; Qiu, Bocang; Liu, Xuehua; Zhang, Jinping; Zhang, Yi; Fang, Qi; Ren, Zhong; Bai, Yu

    2015-12-15

    We report on our fabrication and characterization of Al{sub 2}O{sub 3}/Si composite nanodome (CND) structures, which is composed of Si nanodome structures with a conformal cladding Al{sub 2}O{sub 3} layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al{sub 2}O{sub 3}thin film coating using atomic layer deposition (ALD) to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al{sub 2}O{sub 3} film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device’s leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al{sub 2}O{sub 3} film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10{sup −9} A/cm{sup 2} over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiO{sub x} layer formed between the interface of Si and the Al{sub 2}O{sub 3} film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al{sub 2}O{sub 3} coated CND structures is a truly viable approach to achieving higher device

  8. Computer Aided Multi-scale Design of SiC-Si3N4 Nanoceramic Composites for High-Temperature Structural Applications

    SciTech Connect (OSTI)

    Vikas Tomer; John Renaud

    2010-08-31

    It is estimated that by using better and improved high temperature structural materials, the power generation efficiency of the power plants can be increased by 15% resulting in significant cost savings. One such promising material system for future high-temperature structural applications in power plants is Silicon Carbide-Silicon Nitride (SiC-Si{sub 3}N{sub 4}) nanoceramic matrix composites. The described research work focuses on multiscale simulation-based design of these SiC-Si{sub 3}N{sub 4} nanoceramic matrix composites. There were two primary objectives of the research: (1) Development of a multiscale simulation tool and corresponding multiscale analyses of the high-temperature creep and fracture resistance properties of the SiC-Si{sub 3}N{sub 4} nanocomposites at nano-, meso- and continuum length- and timescales; and (2) Development of a simulation-based robust design optimization methodology for application to the multiscale simulations to predict the range of the most suitable phase morphologies for the desired high-temperature properties of the SiC-Si{sub 3}N{sub 4} nanocomposites. The multiscale simulation tool is based on a combination of molecular dynamics (MD), cohesive finite element method (CFEM), and continuum level modeling for characterizing time-dependent material deformation behavior. The material simulation tool is incorporated in a variable fidelity model management based design optimization framework. Material modeling includes development of an experimental verification framework. Using material models based on multiscaling, it was found using molecular simulations that clustering of the SiC particles near Si{sub 3}N{sub 4} grain boundaries leads to significant nanocomposite strengthening and significant rise in fracture resistance. It was found that a control of grain boundary thicknesses by dispersing non-stoichiometric carbide or nitride phases can lead to reduction in strength however significant rise in fracture strength. The

  9. Hydrogen interaction kinetics of Ge dangling bonds at the Si{sub 0.25}Ge{sub 0.75}/SiO{sub 2} interface

    SciTech Connect (OSTI)

    Stesmans, A. Nguyen Hoang, T.; Afanas'ev, V. V.

    2014-07-28

    The hydrogen interaction kinetics of the GeP{sub b1} defect, previously identified by electron spin resonance (ESR) as an interfacial Ge dangling bond (DB) defect occurring in densities ?7??10{sup 12}?cm{sup ?2} at the SiGe/SiO{sub 2} interfaces of condensation grown (100)Si/a-SiO{sub 2}/Ge{sub 0.75}Si{sub 0.25}/a-SiO{sub 2} structures, has been studied as function of temperature. This has been carried out, both in the isothermal and isochronal mode, through defect monitoring by capacitance-voltage measurements in conjunction with ESR probing, where it has previously been demonstrated the defects to operate as negative charge traps. The work entails a full interaction cycle study, comprised of analysis of both defect passivation (pictured as GeP{sub b1}-H formation) in molecular hydrogen (?1?atm) and reactivation (GeP{sub b1}-H dissociation) in vacuum. It is found that both processes can be suitably described separately by the generalized simple thermal (GST) model, embodying a first order interaction kinetics description based on the basic chemical reactions GeP{sub b1}?+?H{sub 2}???GeP{sub b1}H?+?H and GeP{sub b1}H???GeP{sub b1}?+?H, which are found to be characterized by the average activation energies E{sub f}?=?1.44??0.04?eV and E{sub d}?=?2.23??0.04?eV, and attendant, assumedly Gaussian, spreads ?E{sub f}?=?0.20??0.02?eV and ?E{sub d}?=?0.15??0.02?eV, respectively. The substantial spreads refer to enhanced interfacial disorder. Combination of the separately inferred kinetic parameters for passivation and dissociation results in the unified realistic GST description that incorporates the simultaneous competing action of passivation and dissociation, and which is found to excellently account for the full cycle data. For process times t{sub a}???35?min, it is found that even for the optimum treatment temperature ?380?C, only ?60% of the GeP{sub b1} system can be electrically silenced, still far remote from device grade level. This ineffectiveness is

  10. Charge transfer of single laser crystallized intrinsic and phosphorus-doped Si-nanocrystals visualized by Kelvin probe force microscopy

    SciTech Connect (OSTI)

    Xu, Jie; Xu, Jun Lu, Peng; Shan, Dan; Li, Wei; Chen, Kunji

    2014-10-07

    Isolated intrinsic and phosphorus doped (P-doped) Si-nanocrystals (Si-NCs) on n- and p-Si substrates are fabricated by excimer laser crystallization techniques. The formation of Si-NCs is confirmed by atomic force microscopy (AFM) and conductive AFM measurements. Kelvin probe force microscopy (KPFM) is then carried out to visualize the trapped charges in a single Si-NC dot which derives from the charge transfer between Si-NCs and Si substrates due to their different Fermi levels. The laser crystallized P-doped Si-NCs have a similar Fermi level around the mid-gap to the intrinsic counterparts, which might be caused by the inactivated impurity atoms or the surface states-related Fermi level pinning. A clear rise of the Fermi level in P-doped Si-NCs is observed after a short time thermal annealing treatment, indicating the activation of dopants in Si-NCs. Moreover, the surface charge quantity can be estimated using a simple parallel plate capacitor model for a quantitative understanding of the KPFM results at the nanoscale.

  11. Microstructural Characterization of U-7Mo/Al-Si Alloy Matrix Dispersion Fuel Plates Fabricated at 500°C

    SciTech Connect (OSTI)

    Dennis D. Keiser, Jr.; Jan-Fong Jue; Bo Yao; Emmanuel Perez; Yongho Sohn; Curtis R. Clark

    2011-05-01

    The starting microstructure of a dispersion fuel plate will impact the overall performance of the plate during irradiation. To improve the understanding of the as-fabricated microstructures of U–Mo dispersion fuel plates, particularly the interaction layers that can form between the fuel particles and the matrix, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses have been performed on samples from depleted U–7Mo (U–7Mo) dispersion fuel plates with either Al–2 wt.% Si(Al–2Si) or AA4043 alloy matrix. It was observed that in the thick interaction layers, U(Al, Si)3 and U6Mo4Al43 were present, and in the thin interaction layers, (U, Mo) (Al, Si)3, U(Al, Si)4, U3Si3Al2, U3Si5, and possibly USi-type phases were observed. The U3Si3Al2 phase contained some Mo. Based on the results of this investigation, the time that a dispersion fuel plate is exposed to a relatively high temperature during fabrication will impact the nature of the interaction layers around the fuel particles. Uniformly thin, Si-rich layers will develop around the U–7Mo particles for shorter exposure times, and thicker, Si-depleted layers will develop for the longer exposure times.

  12. Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands

    SciTech Connect (OSTI)

    Yablonskiy, A. N. Baidakova, N. A. Novikov, A. V.; Lobanov, D. N.; Shaleev, M. V.

    2015-11-15

    The spectral and time characteristics of photoluminescence associated with the radiative recombination of charge carriers in SiGe/Si(001) multilayer structures with self-assembled Ge:Si islands are investigated. The time dependences of the photoluminescence of Ge:Si islands in a wide range of delay times after the pump pulse are considered at various optical-excitation levels. The photoluminescence-excitation spectra from Ge(Si) islands in the SiGe/Si(001) structures are investigated in the region of band-to-band and subband optical pumping corresponding to various time components in the photoluminescence-relaxation kinetics. A significant difference in the shape of the excitation spectra is revealed for fast (0–100 μs) and slow (100 μs–50 ms) components of the photoluminescence signal from the islands. The significant dependence of the photoluminescence-excitation spectra of Ge(Si)/Si(001) islands on the optical-pump power is shown to be associated with the prolonged diffusion of nonequilibrium charge carriers from bulk-silicon layers to Ge:Si islands at high excitation levels.

  13. X-ray Raman scattering study of MgSiO₃ glass at high pressure: Implication for triclustered MgSiO₃ melt in Earth's mantle

    SciTech Connect (OSTI)

    Lee, Sung Keun; Lin, Jung-Fu; Cai, Yong Q.; Hiraoka, Nozomu; Eng, Peter J.; Okuchi, Takuo; Mao, Ho-kwang; Meng, Yue; Hu, Michael Y.; Chow, Paul; Shu, Jinfu; Li, Baosheng; Fukui, Hiroshi; Lee, Bum Han; Kim, Hyun Na; Yoo, Choong-Shik

    2015-02-09

    Silicate melts at the top of the transition zone and the core-mantle boundary have significant influences on the dynamics and properties of Earth's interior. MgSiO3-rich silicate melts were among the primary components of the magma ocean and thus played essential roles in the chemical differentiation of the early Earth. Diverse macroscopic properties of silicate melts in Earth's interior, such as density, viscosity, and crystal-melt partitioning, depend on their electronic and short-range local structures at high pressures and temperatures. Despite essential roles of silicate melts in many geophysical and geodynamic problems, little is known about their nature under the conditions of Earth's interior, including the densification mechanisms and the atomistic origins of the macroscopic properties at high pressures. Here, we have probed local electronic structures of MgSiO3 glass (as a precursor to Mg-silicate melts), using high-pressure x-ray Raman spectroscopy up to 39 GPa, in which high-pressure oxygen K-edge features suggest the formation of tricluster oxygens (oxygen coordinated with three Si frameworks; [3]O) between 12 and 20 GPa. Our results indicate that the densification in MgSiO3 melt is thus likely to be accompanied with the formation of triculster, in addition to a reduction in nonbridging oxygens. The pressure-induced increase in the fraction of oxygen triclusters >20 GPa would result in enhanced density, viscosity, and crystal-melt partitioning, and reduced element diffusivity in the MgSiO3 melt toward deeper part of the Earth's lower mantle.

  14. The Effects of Nitrogen on the Interface State Density Near the Conduction Band Edge in 4H and 6H-SiC

    SciTech Connect (OSTI)

    Chung, G.Y.; Tin, C.C.; Isaacs-Smith, T.; Williams, J.R.; McDonald, K.; DiVentra, M.; Pantelides, S.T.; Feldman, L.C.; Weller, R.A.; Holland, O.W.

    2000-06-12

    Results are reported for the passivation of interface states near the conduction band edge in SiO{sub 2}/SiC MOS capacitors using post-oxidation anneals in nitric oxide, ammonia and forming gas (N{sub 2}5%H{sub 2}). Anneals in nitric oxide and ammonia reduce the interface state density significantly for 4H-SiC, while forming gas anneals are largely ineffective. Results suggest that interface states in SiO{sub 2}/SiC and SiO{sub 2}/SiC have different origins, and a model is described for interface state passivation by nitrogen in the SiO{sub 2}/SiC system. The peak inversion channel mobility measured for lateral 4H-SiC MOSFETs increases following NO passivation.

  15. Stability of SiC-Matrix Microencapsulated Fuel Constituents at Relevant LWR Conditions

    SciTech Connect (OSTI)

    Terrani, Kurt A; Katoh, Yutai; Leonard, Keith J; Perez-Bergquist, Alex G; Silva, Chinthaka M; Snead, Lance Lewis

    2014-01-01

    This paper addresses certain key feasibility issues facing the application of SiC-matrix microencapsulated fuels for light water reactor application. Issues addressed are the irradiation stability of the SiC-based nano-powder ceramic matrix under LWR-relevant irradiation conditions, the presence or extent of reaction of the SiC matrix with zirconium-based cladding, the stability of the inner and outer pyrolytic graphite layers of the microencapsulated (TRISO) particle at this uncharacteristically low irradiation temperature, and the state of the particle-matrix interface following irradiation which could possibly effect thermal transport. In the process of determining these feasibility issues microstructural evolution and change in dimension and thermal conductivity was studied. As a general finding the SiC matrix was found to be quite stable with behavior similar to that of CVD SiC. In magnitude the irradiation-induced swelling of the matrix material was slightly higher and irradiation-degraded thermal conductivity was slightly lower as compared to CVD SiC. No significant reaction of this SiC-based nano-powder ceramic matrix material with Zircaloy was observed. Irradiation of the TRISO in the 320-360 C range to a maximum dose of 7.7 1025 n/m2 (E > 0.1 MeV) did not have significant negative impact on the constituent layers of the TRISO fuel. At the highest dose studied layer structure and interface integrity remained essentially unchanged with good apparent thermal transport through the microsphere to the surrounding matrix.

  16. Percolation mechanism through trapping/de-trapping process at defect states for resistive switching devices with structure of Ag/Si{sub x}C{sub 1?x}/p-Si

    SciTech Connect (OSTI)

    Liu, Yanhong; Gao, Ping; Li, La; Peng, Wei [School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024 (China); Jiang, Xuening; Zhang, Jialiang [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024 (China)

    2014-08-14

    Pure Si{sub x}C{sub 1?x} (x?>?0.5) and B-containing Si{sub x}C{sub 1?x} (x?>?0.5) based resistive switching devices (RSD) with the structure of Ag/Si{sub x}C{sub 1?x}/p-Si were fabricated and their switching characteristics and mechanism were investigated systematically. Percolation mechanism through trapping/ de-trapping at defect states was suggested for the switching process. Through the introduction of B atoms into Si{sub x}C{sub 1?x}, the density of defect states was reduced, then, the SET and RESET voltages were also decreased. Based on the percolation theory, the dependence of SET/RESET voltage on the density of defect states was analyzed. These results supply a deep understanding for the SiC-based RSD, which have a potential application in extreme ambient conditions.

  17. High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy

    SciTech Connect (OSTI)

    Maeda, Y.; Yamada, S.; Ando, Y.; Yamane, K.; Miyao, M.; Hamaya, K.

    2010-11-08

    We demonstrate atomically controlled heterojunctions consisting of ferromagnetic CoFe alloys and silicon (Si) using low-temperature molecular beam epitaxy with a good atomic matching at the (111) plane. The saturation magnetization of the CoFe layers grown reaches {approx}85% of the value of bulk samples reported so far, and can be systematically controlled by tuning the ratio of Co to Fe, indicating that the silicidation reactions between CoFe and Si are suppressed and the heterojunctions are very high quality. We find that the Schottky barrier height of the high-quality CoFe/Si(111) junctions is unexpectedly low compared to the previous data for other metal/Si ones, implying the reduction in the Fermi-level-pinning effect. We can expand the available high-quality ferromagnet/Si heterostructures in the field of Si-based spintronics.

  18. Low temperature fabrication and doping concentration analysis of Au/Sb ohmic contacts to n-type Si

    SciTech Connect (OSTI)

    Liu, J. Q.; Wang, C.; Zhu, T.; Wu, W. J.; Fan, J.; Tu, L. C.

    2015-11-15

    This paper investigates low temperature ohmic contact formation of Au/Sb to n-type Si substrates through AuSb/NiCr/Au metal stacks. Liquid epitaxy growth is utilized to incorporate Sb dopants into Si substrate in AuSi melt. The best specific contact resistivity achieved is 0.003 Ω ⋅ cm{sup 2} at 425 {sup o}C. Scanning electron microscopy (SEM) reveals inverted pyramidal crater regions at the metal/semiconductor interface, indicating that AuSi alloying efficiently occurs at such sites. Secondary ion mass spectroscopy (SIMS) shows that Sb atoms are successfully incorporated into Si as doping impurities during the anneal process, and the Sb doping concentration at the contact interface is found to be higher than the solid solubility limit in a Si crystal. This ohmic contacts formation method is suitable for semiconductor fabrication processes with limited thermal budget, such as post CMOS integration of MEMS.

  19. Disorder dependent half-metallicity in Mn{sub 2}CoSi inverse Heusler alloy

    SciTech Connect (OSTI)

    Singh, Mukhtiyar; Saini, Hardev S.; Thakur, Jyoti; Reshak, Ali H.; Kashyap, Manish K.

    2013-12-15

    Heusler alloys based thin-films often exhibit a degree of atomic disorder which leads to the lowering of spin polarization in spintronic devices. We present ab-initio calculations of atomic disorder effects on spin polarization and half-metallicity of Mn{sub 2}CoSi inverse Heusler alloy. The five types of disorder in Mn{sub 2}CoSi have been proposed and investigated in detail. The A2{sub a}-type and B2-type disorders destroy the half-metallicity whereas it sustains for all disorders concentrations in DO{sub 3a}- and A2{sub b}-type disorder and for smallest disorder concentration studied in DO{sub 3b}-type disorder. Lower formation energy/atom for A2{sub b}-type disorder than other four disorders in Mn{sub 2}CoSi advocates the stability of this disorder. The total magnetic moment shows a strong dependence on the disorder and the change in chemical environment. The 100% spin polarization even in the presence of disorders explicitly supports that these disorders shall not hinder the use of Mn{sub 2}CoSi inverse Heusler alloy in device applications. - Graphical abstract: Minority-spin gap (E{sub g↓}) and HM gap (E{sub sf}) as a function of concentrations of various possible disorder in Mn{sub 2}CoSi inverse Heusler alloy. The squares with solid line (black color)/dotted line (blue color)/dashed line (red color) reperesents E{sub g↓} for DO{sub 3a}-/DO{sub 3b}-/A2{sub b}-type disorder in Mn{sub 2}CoSi and the spheres with solid line (black color)/dottedline (blue color)/dashed line (red color) represents E{sub sf} for DO{sub 3a}-/DO{sub 3b}-/A2{sub b}-type disorder in Mn{sub 2}CoSi. - Highlights: • The DO{sub 3}- and A2-type disorders do not affect the half-metallicity in Mn{sub 2}CoSi. • The B2-type disorder solely destroys half-metallicity in Mn{sub 2}CoSi. • The A2-type disorder most probable to occur out of all three types. • The total spin magnetic moment strongly depends on the disorder concentrations.

  20. Effects of temperature and pressure on phonons in FeSi1–xAlx

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Delaire, O.; Al-Qasir, I. I.; Ma, J.; dos Santos, A. M.; Sales, B. C.; Mauger, L.; Stone, M. B.; Abernathy, D. L.; Xiao, Y.; Somayazulu, M.

    2013-05-31

    The effects of temperature and pressure on phonons in B20 compounds FeSi1–xAlx were measured using inelastic neutron scattering and nuclear-resonant inelastic x-ray scattering. The effect of hole doping through Al substitution is compared to results of alloying with Co (electron doping) in Fe₁₋xCoxSi. While the temperature dependence of phonons in FeSi is highly anomalous, doping with either type of carriers leads to a recovery of the normal quasiharmonic behavior. Density functional theory (DFT) computations of the electronic band structure and phonons were performed. The anomaly in the temperature dependence of the phonons in undoped FeSi was related to the narrowmore » band gap, and its sensitivity to the effect of thermal disordering by phonons. On the other hand, the pressure dependence of phonons at room temperature in undoped FeSi follows the quasiharmonic behavior and is well reproduced by the DFT calculations.« less

  1. Tuning From Half-Metallic to Semiconducting Behavior in SiC Nanoribbons

    SciTech Connect (OSTI)

    Lopez-Benzanilla, Alejandro; Huang, Jingsong; Kent, Paul R; Sumpter, Bobby G

    2013-01-01

    Half-metallic nanoscale conductors, highly sought after for spintronic applications, are usually realized through metal elements, chemical doping, or external electric fields. By means of local and hybrid density functional theory calculations, we identify pristine zigzag silicon carbide nanoribbons (zSiC-NRs) with bare edges as a metal-free monolayered material that exhibits intrinsic half-metallic behavior without chemical doping or external electric field. Ab initio molecular dynamics simulations indicate that the half-metallicity is robust at room temperature. We also demonstrate that edge termination with O and S atoms transforms the zSiC-NRs into a full metal or a semiconducting material, respectively, due to the presence of O dimerization only on the Si edge and of S trimerization on both Si and C edges, the latter being driven by an unusual Peierls-like distortion along the functionalizing S atoms. The rich electronic properties displayed by zSiC-NRs may open new perspectives for spintronic applications using layered, metal-free, and light atom material.

  2. Epitaxial growth of highly conductive RuO{sub 2} thin films on (100) Si

    SciTech Connect (OSTI)

    Jia, Q.X.; Song, S.G.; Wu, X.D.; Cho, J.H.; Foltyn, S.R.; Findikoglu, A.T.; Smith, J.L.

    1996-02-01

    Conductive RuO{sub 2} thin films have been heteroepitaxially grown by pulsed laser deposition on Si substrates with yttria-stabilized zirconia (YSZ) buffer layers. The RuO{sub 2} thin films deposited under optimized processing conditions are {ital a}-axis oriented normal to the Si substrate surface with a high degree of in-plane alignment with the major axes of the (100) Si substrate. Cross-sectional transmission electron microscopy analysis on the RuO{sub 2}/YSZ/Si multilayer shows an atomically sharp interface between the RuO{sub 2} and the YSZ. Electrical measurements show that the crystalline RuO{sub 2} thin films are metallic over a temperature range from 4.2 to 300 K and are highly conductive with a room-temperature resistivity of 37{plus_minus}2 {mu}{Omega}cm. The residual resistance ratio ({ital R}{sub 300K}/{ital R}{sub 4.2K}) above 5 for our RuO{sub 2} thin films is the highest ever reported for such films on Si substrates. {copyright} {ital 1996 American Institute of Physics.}

  3. Understanding Light-Induced Degradation of c-Si Solar Cells: Preprint

    SciTech Connect (OSTI)

    Sopori, B.; Basnyat, P.; Devayajanam, S.; Shet, S.; Mehta, V.; Binns, J.; Appel, J.

    2012-06-01

    We discuss results of our investigations toward understanding bulk and surface components of light-induced degradation (LID) in low-Fe c-Si solar cells. The bulk effects, arising from boron-oxygen defects, are determined by comparing degradation of cell parameters and their thermal recovery, with that of the minority-carrier lifetime (964;) in sister wafers. We found that the recovery of 964; in wafers takes a much longer annealing time compared to that of the cell. We also show that cells having SiN:H coating experience a surface degradation (ascribed to surface recombination). The surface LID is seen as an increase in the q/2kT component of the dark saturation current (J02). The surface LID does not recover fully upon annealing and is attributed to degradation of the SiN:H-Si interface. This behavior is also exhibited by mc-Si cells that have very low oxygen content and do not show any bulk degradation.

  4. The correlation of epitaxial graphene properties and morphology of SiC (0001)

    SciTech Connect (OSTI)

    Guo, Y.; Guo, L. W., E-mail: lwguo@iphy.ac.cn, E-mail: xlchen@iphy.ac.cn; Huang, J.; Jia, Y. P.; Lin, J. J.; Lu, W.; Li, Z. L. [Research and Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Yang, R. [Nanoscale Physics and Devices Laboratory, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Chen, X. L., E-mail: lwguo@iphy.ac.cn, E-mail: xlchen@iphy.ac.cn [Research and Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

    2014-01-28

    The electronic properties of epitaxial graphene (EG) on SiC (0001) depend sensitively on the surface morphology of SiC substrate. Here, 23 layers of graphene were grown on on-axis 6H-SiC with different step densities realized through controlling growth temperature and ambient pressure. We show that epitaxial graphene on SiC (0001) with low step density and straight step edge possesses fewer point defects laying mostly on step edges and higher carrier mobility. A relationship between step density and EG mobility is established. The linear scan of Raman spectra combined with the atomic force microscopy morphology images revealed that the Raman fingerprint peaks are nearly the same on terraces, but shift significantly while cross step edges, suggesting the graphene is not homogeneous in strain and carrier concentration over terraces and step edges of substrates. Thus, control morphology of epitaxial graphene on SiC (0001) is a simple and effective method to pursue optimal route for high quality graphene and will be helpful to prepare wafer sized graphene for device applications.

  5. MoSi 2 Oxidation in 670-1498 K Water Vapor

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sooby Wood, Elizabeth; Parker, Stephen S.; Nelson, Andrew T.; Maloy, Stuart A.; Butt, D.

    2016-03-08

    Molybdenum disilicide (MoSi2) has well documented oxidation resistance at high temperature (T > 1273 K) in dry O2 containing atmospheres due to the formation of a passive SiO2 surface layer. But, its behavior under atmospheres where water vapor is the dominant species has received far less attention. Oxidation testing of MoSi2 was performed at temperatures ranging from 670–1498 K in both 75% water vapor and synthetic air (Ar-O2, 80%–20%) containing atmospheres. Here the thermogravimetric and microscopy data describing these phenomena are presented. Over the temperature range investigated, MoSi2 displays more mass gain in water vapor than in air. The oxidationmore » kinetics observed in water vapor differ from that of the air samples. Two volatile oxides, MoO2(OH)2 and Si(OH)4, are thought to be the species responsible for the varied kinetics, at 670–877 K and at 1498 K, respectively. Finally, we observed an increase in oxidation (140–300 mg/cm2) from 980–1084 K in water vapor, where passivation is observed in air.« less

  6. Early implementation of SiC cladding fuel performance models in BISON

    SciTech Connect (OSTI)

    Powers, Jeffrey J.

    2015-09-18

    SiC-based ceramic matrix composites (CMCs) [5–8] are being developed and evaluated internationally as potential LWR cladding options. These development activities include interests within both the DOE-NE LWR Sustainability (LWRS) Program and the DOE-NE Advanced Fuels Campaign. The LWRS Program considers SiC ceramic matrix composites (CMCs) as offering potentially revolutionary gains as a cladding material, with possible benefits including more efficient normal operating conditions and higher safety margins under accident conditions [9]. Within the Advanced Fuels Campaign, SiC-based composites are a candidate ATF cladding material that could achieve several goals, such as reducing the rates of heat and hydrogen generation due to lower cladding oxidation rates in HT steam [10]. This work focuses on the application of SiC cladding as an ATF cladding material in PWRs, but these work efforts also support the general development and assessment of SiC as an LWR cladding material in a much broader sense.

  7. Corrosion protection of SiC-based ceramics with CVD mullite coatings

    SciTech Connect (OSTI)

    Sarin, V.; Mulpuri, R.; Auger, M.

    1996-04-20

    SiC based ceramics have been identified as the leading candidate materials for elevated temperature applications in harsh oxidation/corrosion environments. It has been established that a protective coating can be effectively used to avoid problems with excessive oxidation and hot corrosion. However, to date, no coating configuration has been developed that can withstand the rigorous requirements imposed by such applications. Chemical vapor deposited (CVD) mullite coatings due to their desirable properties of toughness, corrosion resistance, and good coefficient of thermal expansion match with SiC are being developed as a potential solution. Formation of mullite on ceramic substrates via chemical vapor deposition was investigated. Thermodynamic calculations performed on the AlCl{sub 3}- SiCl{sub 4}-CO{sub 2}-H{sub 2} system were used to construct equilibrium CVD phase diagrams. Through process optimization, crystalline CVD mullite coatings have been successfully grown on SiC and Si{sub 3}N{sub 4} substrates. Results from the thermodynamic analysis, process optimization, and effect of various process parameters on deposition rate and coating morphology are discussed.

  8. Characterization of plasma chemistry and ion energy in cathodic arc plasma from Ti-Si cathodes of different compositions

    SciTech Connect (OSTI)

    Eriksson, A. O.; Zhirkov, I.; Dahlqvist, M.; Jensen, J.; Hultman, L.; Rosen, J.

    2013-04-28

    Arc plasma from Ti-Si compound cathodes with up to 25 at. % Si was characterized in a DC arc system with respect to chemistry and charge-state-resolved ion energy. The plasma ion composition showed a lower Si content, diverging up to 12 at. % compared to the cathode composition, yet concurrently deposited films were in accordance with the cathode stoichiometry. Significant contribution to film growth from neutrals is inferred besides ions, since the contribution from macroparticles, estimated by scanning electron microscopy, cannot alone account for the compositional difference between cathode, plasma, and film. The average ion charge states for Ti and Si were higher than reference data for elemental cathodes. This result is likely related to TiSi{sub x} phases of higher cohesive energies in the compound cathodes and higher effective electron temperature in plasma formation. The ion energy distributions extended up to {approx}200 and {approx}130 eV for Ti and Si, respectively, with corresponding average energies of {approx}60 and {approx}30 eV. These averages were, however, not dependent on Si content in the cathode, except for 25 at. % Si where the average energies were increased up to 72 eV for Ti and 47 eV for Si.

  9. X-ray nano-diffraction study of Sr intermetallic phase during solidification of Al-Si hypoeutectic alloy

    SciTech Connect (OSTI)

    Manickaraj, Jeyakumar; Gorny, Anton; Shankar, Sumanth, E-mail: shankar@mcmaster.ca [Light Metal Casting Research Centre (LMCRC), Department of Mechanical Engineering, McMaster University, 1280 Main Street W, Hamilton, Ontario L8S 4L7 (Canada); Cai, Zhonghou [Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States)

    2014-02-17

    The evolution of strontium (Sr) containing intermetallic phase in the eutectic reaction of Sr-modified Al-Si hypoeutectic alloy was studied with high energy synchrotron beam source for nano-diffraction experiments and x-ray fluorescence elemental mapping. Contrary to popular belief, Sr does not seem to interfere with the Twin Plane Re-entrant Edge (TPRE) growth mechanism of eutectic Si, but evolves as the Al{sub 2}Si{sub 2}Sr phase during the eutectic reaction at the boundary between the eutectic Si and Al grains.

  10. Hydrogenation Methods and Passivation Mechanisms for c-Si Photovoltaics: Final Technical Report, 2 January 2002 - 15 January 2008

    SciTech Connect (OSTI)

    Estreicher, S. K.

    2008-11-01

    Joint experimental and theortetical research program to improve processes used to eliminate or passivate lifetime-reducing defects in the Si bulk.

  11. Thin Film Si Bottom Cells for Tandem Device Structures: Final Technical Report, 15 December 2003 - 15 October 2007

    SciTech Connect (OSTI)

    Yelundur, V.; Hegedus, S.; Rohatgi, A.; Birkmire, R.

    2008-11-01

    GIT and IEC developed thin-film Si bottom cell and showed that deposition of top cell in tandem device did not reduce bottom cell performance.

  12. Progress towards a 30% efficient GaInP/Si tandem solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Essig, Stephanie; Ward, Scott; Steiner, Myles A.; Friedman, Daniel J.; Geisz, John F.; Stradins, Paul; Young, David L.

    2015-08-28

    The performance of dual-junction solar cells with a Si bottom cell has been investigated both theoretically and experimentally. Simulations show that adding a top junction with an energy bandgap of 1.6 -1.9 eV to a standard silicon solar cell enables efficiencies over 38%. Currently, top junctions of GaInP (1.8 eV) are the most promising as they can achieve 1-sun efficiencies of 20.8% [1]. We fabricated mechanically stacked, four terminal GaInP/Si tandem solar cells using a transparent adhesive between the subcells. These tandem devices achieved an efficiency of 27% under AM1.5 g spectral conditions. Furthermore, higher efficiencies can be achieved bymore » using an improved Si-bottom cell and by optimizing the dual-junction device for long-wavelength light and luminescent coupling between the two junctions.« less

  13. Effective defect diffusion lengths in Ar-ion bombarded 3C-SiC

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bayu Aji, L. B.; Wallace, J. B.; Shao, L.; Kucheyev, S. O.

    2016-04-14

    Above room temperature, SiC exhibits pronounced processes of diffusion and interaction of radiation-generated point defects. Here, we use the recently developed pulsed ion beam method to measure effective defect diffusion lengths in 3C-SiC bombarded in the temperature range of 25–200 °C with 500 keV Ar ions. Results reveal a diffusion length of ~10 nm, which exhibits a weak temperature dependence, changing from 9 to 13 nm with increasing temperature. Lastly, these results have important implications for understanding and predicting radiation damage in SiC and for the development of radiation-resistant materials via interface-mediated defect reactions.

  14. Non-Contact Printed Aluminum Metallization of Si Photovoltaic Devices: Preprint

    SciTech Connect (OSTI)

    Platt, H. A. S.; van Hest, M. F. A. M.; Li, Y.; Novak, J. P.

    2012-06-01

    Alternative solution-based techniques such as aerosol jet printing offer the dual benefits of contactless pattern deposition and high material utilization. We have used aerosol jet printing to investigate non-contact printed Al metal ink as a replacement for screen printed Al back contacts on wafer Si solar cells. This particle-based ink can be prepared at high loadings of 60 weight % metal, which enables rapid deposition of 1 - 10 um thick lines. Al lines printed on Si wafers and heated between 550 and 800 degrees C form low resistance contacts suitable for current extraction. The effectiveness of these printed Al back contacts has further been demonstrated by incorporating them into a series of 21 cm2 crystalline Si solar cells that produced a champion power conversion efficiency of 13%.

  15. New Hydrogen Distribution in {ital a}-Si:H: An NMR Study

    SciTech Connect (OSTI)

    Wu, Y.; Stephen, J.T.; Han, D.X.; Rutland, J.M.; Crandall, R.S.; Mahan, A.H.

    1996-09-01

    Hot-filament-assisted CVD deposited {ital a}-Si:H with low H concentration and low defect density has been examined by {sup 1}H NMR. It is demonstrated for the first time that H microstructures can be altered significantly in device quality {ital a}-Si:H films. In the present films, large H clusters account for 90{percent} of the 2{endash}3 at.{percent} H atoms, with the remaining H more dispersed, but still aggregated in a small volume fraction of the material. These results suggest that an ideal {ital a}-Si:H network with low defect density and high structural stability may not necessarily be homogeneous. {copyright} {ital 1996 The American Physical Society.}

  16. Manipulating hybrid structures of polymer/a-Si for thin film solar cells

    SciTech Connect (OSTI)

    Peng, Ying; He, Zhiqun, E-mail: zhqhe@bjtu.edu.cn, E-mail: J.I.B.Wilson@hw.ac.uk; Zhang, Zhi; Liang, Chunjun [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Diyaf, Adel; Ivaturi, Aruna; Wilson, John I. B., E-mail: zhqhe@bjtu.edu.cn, E-mail: J.I.B.Wilson@hw.ac.uk [SUPA, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom)

    2014-03-10

    A series of uniform polymer/amorphous silicon hybrid structures have been fabricated by means of solution-casting for polymer and radio frequency excited plasma enhanced chemical vapour deposition for amorphous silicon (a-Si:H). Poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) functioned as a photoactive donor, while the silicon layer acted as an acceptor. It is found that matching the hole mobility of the polymer to the electron mobility of amorphous silicon is critical to improve the photovoltaic performance from hybrid cells. A three-layer p-i-n structure of ITO/PEDOT:PSS(200?nm)/i-Si(450?nm)/n-Si(200?nm)/Al with a power conversion efficiency of 4.78% under a standard test condition was achieved.

  17. Elasticity and magnetocaloric effect in MnFe4Si3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Herlitschke, Marcus; Klobes, B.; Sergueev, I.; Hering, Paul; Persson, Joerg; Hermann, Raphael P.

    2016-03-16

    The room temperature magnetocaloric material MnFe4Si3 was investigated with nuclear inelastic scattering (NIS) and resonant ultrasound spectroscopy (RUS) at different temperatures and applied magnetic fields in order to assess the infuence of the magnetic transition and the magnetocaloric effect on the lattice dynamics. The NIS data give access to phonons with energies above 3 meV, whereas RUS probes the elasticity of the material in the MHz frequency range and thus low energy, ~5 neV, phonon modes. A significant infuence of the magnetic transition on the lattice dynamics is observed only in the low energy region. Here, MnFe4Si3 and other compoundsmore » in the Mn5-xFexSi3 series were also investigated with vibrating sample magnetometry, resistivity measurements and Moessbauer spectroscopy in order to study the magnetic transitions and to complement the obtained results on the lattice dynamics.« less

  18. Emission Properties from ZnO Quantum Dots Dispersed in SiO{sub 2} Matrix

    SciTech Connect (OSTI)

    Panigrahi, Shrabani; Basak, Durga

    2011-07-15

    Dispersion of ZnO quantum dots in SiO{sub 2} matrix has been achieved in two techniques based on StOeber method to form ZnO QDs-SiO{sub 2} nanocomposites. Sample A is formed with random dispersion by adding tetraethyl orthosilicate (TEOS) to an ethanolic solution of ZnO nanoparticles and sample B is formed with a chain-like ordered dispersion by adding ZnO nanoparticles to an already hydrolyzed ethanolic TEOS solution. The photoluminescence spectra of the as-grown nanocomposites show strong emission in the ultraviolet region. When annealed at higher temperature, depending on the sample type, these show strong red or white emission. Interestingly, when the excitation is removed, the orderly dispersed ZnO QDs-SiO{sub 2} composite shows a very bright blue fluorescence visible by naked eyes for few seconds indicating their promise for display applications.

  19. Monte Carlo Simulation of Electron Transport in 4H- and 6H-SiC

    SciTech Connect (OSTI)

    Sun, C. C.; You, A. H.; Wong, E. K.

    2010-07-07

    The Monte Carlo (MC) simulation of electron transport properties at high electric field region in 4H- and 6H-SiC are presented. This MC model includes two non-parabolic conduction bands. Based on the material parameters, the electron scattering rates included polar optical phonon scattering, optical phonon scattering and acoustic phonon scattering are evaluated. The electron drift velocity, energy and free flight time are simulated as a function of applied electric field at an impurity concentration of 1x10{sup 18} cm{sup 3} in room temperature. The simulated drift velocity with electric field dependencies is in a good agreement with experimental results found in literature. The saturation velocities for both polytypes are close, but the scattering rates are much more pronounced for 6H-SiC. Our simulation model clearly shows complete electron transport properties in 4H- and 6H-SiC.

  20. Effects of Contact Resistance on Electrical Conductivity Measurements of SiC-Based Materials

    SciTech Connect (OSTI)

    Youngblood, Gerald E.; Thomsen, Edwin C.; Henager, Charles H.

    2012-04-17

    A combination 2/4-probe method was used to measure electrical resistances across a pure, monolithic CVD-SiC disc sample with contact resistance at the SiC/metallic electrode interfaces. By comparison of the almost simultaneous 2/4-probe measurements, the specific contact resistance and its temperature dependence were determined for two types (sputtered gold and porous nickel) electrodes from RT to ~700C. The specific contact resistance values (Rc) behaved similarly for each type of metallic electrode: Rc >~1000 ?-cm2 at RT, decreasing continuously to ~1-10 ?-cm2 at 700C. The temperature dependence of the inverse Rc indicated thermally activated electrical conduction across the SiC/metallic interface with an apparent activation energy of ~0.3 eV. For the flow channel insert application in a fusion reactor blanket, contact resistance potentially could reduce the transverse electrical conductivity by ~1/2.

  1. Effects of contact resistance on electrical conductivity measurements of SiC-based materials

    SciTech Connect (OSTI)

    Youngblood, Gerald E.; Thomsen, Edwin C.; Henager, Charles H.

    2013-06-30

    A combination 2/4-probe method was used to measure electrical resistances across a pure, monolithic CVD-SiC disc sample with contact resistance at the SiC/metallic electrode interfaces. By comparison of the almost simultaneous 2/4-probe measurements, the specific contact resistance (Rc) and its temperature dependence were determined for two types (sputtered gold and porous nickel) electrodes from room temperature (RT) to ?973 K. The Rc-values behaved similarly for each type of metallic electrode: Rc > ?1000 ? cm2 at RT, decreasing continuously to ?110 ? cm2 at 973 K. The temperature dependence of the inverse Rc indicated thermally activated electrical conduction across the SiC/metallic interface with an apparent activation energy of ?0.3 eV. For the flow channel insert application in a fusion reactor blanket, contact resistance potentially could reduce the transverse electrical conductivity by about 50%.

  2. Enhancing optical gains in Si nanocrystals via hydrogenation and cerium ion doping

    SciTech Connect (OSTI)

    Wang, Dong-Chen; Li, Yan-Li; Song, Sheng-Chi; Guo, Wen-Ping; Lu, Ming; Chen, Jia-Rong

    2014-07-28

    We report optical gain enhancements in Si nanocrystals (Si-NCs) via hydrogenation and Ce{sup 3+} ion doping. Variable stripe length technique was used to obtain gains. At 0.3 W/cm{sup 2} pumping power density of pulsed laser, net gains were observed together with gain enhancements after hydrogenation and/or Ce{sup 3+} ion doping; gains after loss corrections were between 89.52 and 341.95 cm{sup −1}; and the photoluminescence (PL) lifetime was found to decrease with the increasing gain enhancement. At 0.04 W/cm{sup 2} power density, however, no net gain was found and the PL lifetime increased with the increasing PL enhancement. The results were discussed according to stimulated and spontaneous excitation and de-excitation mechanisms of Si-NCs.

  3. Effect of growth temperature on ballistic electron transport through the Au/Si(001) interface

    SciTech Connect (OSTI)

    Eckes, M. W.; Friend, B. E.; Stollenwerk, A. J.

    2014-04-28

    Ballistic electron emission spectroscopy was used to investigate electron transport through Au/Si(001) Schottky diodes grown at 35?C and 22?C. Aside from a decreased Schottky height, this small increase in temperature introduced an energy dependent scattering component, which was absent in the samples grown at 22?C. These differences may be attributed to the increased amount of Au-Si intermixing at the interface. Despite the non-epitaxial nature of the growth technique, strong evidence was found in both sets of samples that indicated the presence of a forward-focused current subject to some degree of parallel momentum conservation at the interface. This evidence was present in all samples grown at 35?C, but was only observed in those samples grown at 22?C when the Au films were 10?nm or thicker. This sensitivity to growth temperature could account for discrepancies in previous studies on Au/Si(001)

  4. Progress towards a 30% efficient GaInP/Si tandem solar cells

    SciTech Connect (OSTI)

    Essig, Stephanie; Ward, Scott; Steiner, Myles A.; Friedman, Daniel J.; Geisz, John F.; Stradins, Paul; Young, David L.

    2015-08-28

    The performance of dual-junction solar cells with a Si bottom cell has been investigated both theoretically and experimentally. Simulations show that adding a top junction with an energy bandgap of 1.6 -1.9 eV to a standard silicon solar cell enables efficiencies over 38%. Currently, top junctions of GaInP (1.8 eV) are the most promising as they can achieve 1-sun efficiencies of 20.8% [1]. We fabricated mechanically stacked, four terminal GaInP/Si tandem solar cells using a transparent adhesive between the subcells. These tandem devices achieved an efficiency of 27% under AM1.5 g spectral conditions. Furthermore, higher efficiencies can be achieved by using an improved Si-bottom cell and by optimizing the dual-junction device for long-wavelength light and luminescent coupling between the two junctions.

  5. Facile synthesis of SiO{sub 2} nanoparticles for biomedical applications

    SciTech Connect (OSTI)

    Scano, A. Pilloni, M. Cabras, V. Ennas, G.; Vazquez-Vazquez, C.

    2014-10-21

    Silica nanoparticles (SiO{sub 2} NPs) for biomedical applications have been prepared by using a facile modified Stöber-synthesis. Potassium borohydride (KBH{sub 4}) has been introduced in the synthesis procedure in order to control NP size. Several samples have been prepared varying tetraethylorthosilicate (TEOS) concentration, and using different process conditions (temperature, reaction time and atmosphere). In order to study the influence of the process conditions on the NP size, morphology and properties, several characterization techniques were used. Size and morphology of the as-prepared SiO{sub 2} NPs have been studied by using Transmission Electron Microscope (TEM) and Dynamic Light Scattering (DLS) techniques. Structural characterization was carried out by X-ray powder diffraction. To investigate the SiO{sub 2} NP fluorescence emission properties the fluorescence spectroscopy was also used.

  6. Development of Highly-Efficient GaInP/Si Tandem Solar Cells

    SciTech Connect (OSTI)

    Essig, Stephanie; Geisz, John F.; Steiner, Myles A.; Merkle, Agnes; Peibst, Robby; Schmidt, Jan; Brendel, Rolf; Ward, Scott; Friedman, Daniel J.; Stradins, Paul; Young, David L.

    2015-06-14

    Dual-junction solar cells consisting of rear-heterojunction GaInP top cells and back-junction, back-contacted crystalline Si bottom cells were fabricated and characterized. Our calculations show that theoretical efficiencies up to 38.9% can be achieved with Si-based tandem devices. In our experiments, the two subcells were fabricated separately and stacked with an index matching fluid. In contrast to conventional mechanically stacked solar cells, that contain two metal grids at the interface, our concept includes a fully back contacted bottom cell which reduces the shadow losses in the device. A 1-sun AM1.5g cumulative efficiency of (26.2 +/- 0.6)% has been achieved with this novel GaInP/Si 4-terminal tandem solar cell.

  7. Spectroscopic ellipsometry on Si/SiO{sub 2}/graphene tri-layer system exposed to downstream hydrogen plasma: Effects of hydrogenation and chemical sputtering

    SciTech Connect (OSTI)

    Eren, Baran; Fu, Wangyang; Marot, Laurent Calame, Michel; Steiner, Roland; Meyer, Ernst

    2015-01-05

    In this work, the optical response of graphene to hydrogen plasma treatment is investigated with spectroscopic ellipsometry measurements. Although the electronic transport properties and Raman spectrum of graphene change after plasma hydrogenation, ellipsometric parameters of the Si/SiO2/graphene tri-layer system do not change. This is attributed to plasma hydrogenated graphene still being electrically conductive, since the light absorption of conducting 2D materials does not depend on the electronic band structure. A change in the light transmission can only be observed when higher energy hydrogen ions (30?eV) are employed, which chemically sputter the graphene layer. An optical contrast is still apparent after sputtering due to the remaining traces of graphene and hydrocarbons on the surface. In brief, plasma treatment does not change the light transmission of graphene; and when it does, this is actually due to plasma damage rather than plasma hydrogenation.

  8. Electronic Band Structure And Kondo Coupling in YbRh(2)Si(2)

    SciTech Connect (OSTI)

    Wigger, G.A.; Baumberger, F.; Shen, Z.X.; Yin, Z.P.; Pickett, W.E.; Maquilon, S.; Fisk, Z.; /UC, Davis

    2007-09-26

    The electronic band structure of YbRh{sub 2}Si{sub 2} is calculated in a relativistic framework including correlation corrections and magnetization of the Yb ion and compared to detailed angle-resolved photoemission spectra. The photoemission spectra for LuRh{sub 2}Si{sub 2} are used as reference to identify electronic bands with no f symmetry. The calculated band structure manifests a 4f{sup 13} spin-polarized configuration leaving the unoccupied state at 1.4 eV above the Fermi energy. At the band theory level, the 4f bands are located far below the Fermi level and the anisotropic Coulomb interaction within the 4f shell spreads the multilevel into broader 4f complexes below -2.5 eV. The photoemission spectra obtained on YbRh2Si2 show a clear f-multilevel splitting into j=7/2 and 5/2 excitations. The interaction of the 4f{sub 7/2} levels close to the Fermi energy with two conduction bands shows visible hybridization gaps of 45 and 80 meV, respectively. We discuss the origin of these excitations and provide an analysis according to Anderson's single-impurity model with parameters suggested by the band-structure calculation and the photoemission spectra. Both experiment and theory indicate nearly identical Fermi surfaces for LuRh{sub 2}Si{sub 2} and YbRh{sub 2}Si{sub 2}. The valency of Yb in YbRh{sub 2}Si{sub 2} is estimated to be close to +3.

  9. Identification of donor deactivation centers in heavily As-doped Si using time-of-flight medium-energy ion scattering spectroscopy

    SciTech Connect (OSTI)

    Min, Won Ja; Park, Kyungsu; Yu, Kyu-Sang; Joo, Sungjung; Kim, Yong-Sung; Moon, Dae Won

    2015-10-07

    Electrically-inactive arsenic (As) complexes in silicon are investigated using time-of-flight medium-energy ion scattering spectroscopy. In heavily As-doped Si, the As atoms that are segregated in the Si interface region just below the SiO{sub 2} are found to be in interstitial forms (As{sub i}), while the As atoms in the bulk Si region are found to be in the substitutional form (As{sub Si}). Despite the substitutional form of As, most of the As are found to be electrically inactive in the bulk region, and we identify the As to be in the form of a 〈111〉-oriented As{sub Si}-Si-vacancy (As{sub Si}-V{sub Si}) complex. The As{sub i} atoms in the interface Si region are found to exist together with Si-interstitial atoms (Si{sub i}), suggesting that the As{sub i} atoms in the interface Si region accompany the Si{sub i} atoms.

  10. Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A.; Oehrlein, Gottlieb S.

    2015-11-11

    The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C4F8 ALE based on steady-state Ar plasma in conjunction with periodic, precise C4F8 injection and synchronized plasma-based low energy Ar+ ion bombardment has been established for SiO2.1 In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF3 as a precursor is examined and compared to C4F8. CHF3 is shown to enable selective SiO2/Si etching using a fluorocarbon (FC) film build up. Othermore » critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and X-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. As a result, plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.« less

  11. Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A.; Oehrlein, Gottlieb S.

    2015-11-11

    The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C4F8 ALE based on steady-state Ar plasma in conjunction with periodic, precise C4F8 injection and synchronized plasma-based low energy Ar+ ion bombardment has been established for SiO2.1 In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF3 as a precursor is examined and compared to C4F8. CHF3 is shown to enable selective SiO2/Si etching using a fluorocarbon (FC) film build up. Othermore »critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and X-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. As a result, plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.« less

  12. Photochemical switching behavior of azofunctionalized polymer liquid crystal/SiO{sub 2} composite photonic crystal

    SciTech Connect (OSTI)

    Moritsugu, M.; Kim, S. N.; Ogata, T.; Nonaka, T.; Kurihara, S.; Kubo, S.; Segawa, H.; Sato, O.

    2006-10-09

    A photochemically tunable photonic crystal was prepared by infiltrating azopolymer liquid crystal in a SiO{sub 2} inverse opal structure. The SiO{sub 2} inverse opal film obtained reflected a light corresponding to the periodicity as well as the refractive indices of the inverse opal structure. Linearly polarized light irradiation shifted the reflection band to longer wavelength more than 15 nm. This is caused by the formation of anisotropic molecular orientation of the azopolymer. The switched state was stable in the dark, and the reversible switching of the reflection band can be achieved by the linearly and circularly polarized light irradiations.

  13. An investigation of hydrogenized amorphous Si structures with Doppler broadening positron annihilation techniques

    SciTech Connect (OSTI)

    Petkov, M.P.; Marek, T.; Asoka-Kumar, P.; Lynn, K.G.; Crandall, R.S.; Mahan, A.H.

    1998-07-01

    In this letter, we examine the feasibility of applying positron annihilation spectroscopy to the study of hydrogenized amorphous silicon (a-Si:H)-based structures produced by chemical vapor deposition techniques. The positron probe, sensitive to open volume formations, is used to characterize neutral and negatively charged silicon dangling bonds, typical for undoped and {ital n}-doped a-Si:H, respectively. Using depth profiling along the growth direction a difference was observed in the electronic environment of these defects, which enables their identification in a p-i-n device. {copyright} {ital 1998 American Institute of Physics.}

  14. Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO{sub 2}

    SciTech Connect (OSTI)

    Gutsch, Sebastian; Laube, Jan; Hiller, Daniel; Zacharias, Margit; Bock, Wolfgang; Wahl, Michael; Kopnarski, Michael; Gnaser, Hubert; Puthen-Veettil, Binesh

    2015-03-16

    We study the electronic properties of phosphorus doped Si nanocrystal/SiO2 superlattices and determine the carrier concentration by transient current analysis. This is achieved by encapsulating the multilayers between two electrical insulation layers and controlling the carrier mobility by a defined layer to layer separation. A saturation of the voltage dependent ionized carrier density is observed which indicates complete substitutional dopant ionization and allows to calculate the dopant induced charge carrier density. It is found that the doping efficiency of the superlattice is only 0.12% considering the full ionization regime which explains the unusual small dopant effect on transport characteristics.

  15. Formation of quantum spin Hall state on Si surface and energy gap scaling

    Office of Scientific and Technical Information (OSTI)

    with strength of spin orbit coupling (Journal Article) | SciTech Connect Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling Citation Details In-Document Search Title: Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator

  16. Fuel Consumption and NOx Trade-offs on a Port-Fuel-Injected SI Gasoline

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Engine Equipped with a Lean-NOx Trap | Department of Energy Consumption and NOx Trade-offs on a Port-Fuel-Injected SI Gasoline Engine Equipped with a Lean-NOx Trap Fuel Consumption and NOx Trade-offs on a Port-Fuel-Injected SI Gasoline Engine Equipped with a Lean-NOx Trap Lean-burn improves PFI fuel economy by ~3% relative to best stoichiometric VCT/EGR conditions, when used in combination with VCT & EGR. deer09_lymburner.pdf (522.69 KB) More Documents & Publications Vehicle

  17. Structure of 5-hydroxymethylcytosine-specific restriction enzyme, AbaSI, in complex with DNA

    SciTech Connect (OSTI)

    Horton, John R.; Borgaro, Janine G.; Griggs, Rose M.; Quimby, Aine; Guan, Shengxi; Zhang, Xing; Wilson, Geoffrey G.; Zheng, Yu; Zhu, Zhenyu; Cheng, Xiaodong

    2014-07-03

    AbaSI, a member of the PvuRts1I-family of modification-dependent restriction endonucleases, cleaves DNA containing 5-hydroxymethylctosine (5hmC) and glucosylated 5hmC (g5hmC), but not DNA containing unmodified cytosine. AbaSI has been used as a tool for mapping the genomic locations of 5hmC, an important epigenetic modification in the DNA of higher organisms. Here we report the crystal structures of AbaSI in the presence and absence of DNA. These structures provide considerable, although incomplete, insight into how this enzyme acts. AbaSI appears to be mainly a homodimer in solution, but interacts with DNA in our structures as a homotetramer. Each AbaSI subunit comprises an N-terminal, Vsr-like, cleavage domain containing a single catalytic site, and a C-terminal, SRA-like, 5hmC-binding domain. Two N-terminal helices mediate most of the homodimer interface. Dimerization brings together the two catalytic sites required for double-strand cleavage, and separates the 5hmC binding-domains by ~ 70 Å, consistent with the known activity of AbaSI which cleaves DNA optimally between symmetrically modified cytosines ~ 22 bp apart. The eukaryotic SET and RING-associated (SRA) domains bind to DNA containing 5-methylcytosine (5mC) in the hemi-methylated CpG sequence. They make contacts in both the major and minor DNA grooves, and flip the modified cytosine out of the helix into a conserved binding pocket. In contrast, the SRA-like domain of AbaSI, which has no sequence specificity, contacts only the minor DNA groove, and in our current structures the 5hmC remains intra-helical. A conserved, binding pocket is nevertheless present in this domain, suitable for accommodating 5hmC and g5hmC. We consider it likely, therefore, that base-flipping is part of the recognition and cleavage mechanism of AbaSI, but that our structures represent an earlier, pre-flipped stage, prior to actual recognition.

  18. Proposed Route to Thin Film Crystal Si Using Biaxially Textured Foreign Template Layers

    SciTech Connect (OSTI)

    Teplin, C. W.; Ginley, D. S.; van Hest, M.F.A.M.; Perkins, J. D.; Young, D. L.; Stradins, P.; Wang, Q.; Al-Jassim, M.; Iwaniczko, E.; Leenheer, A.; Jones, K. M.; Branz, H. M.

    2005-11-01

    We have developed a new approach to growing photovoltaic-quality crystal silicon (c-Si) films on glass. Other approaches to film c-Si focus on increasing grain size in order to reduce the deleterious effects of grain boundaries. Instead, we have developed an approach to align the silicon grains biaxially (both in and out of plane) so that 1) grain boundaries are "low-angle" and have less effect on the electronic properties of the material and 2) subsequent epitaxial thickening is simplified. They key to our approach is the use of a foreign template layer that can be grown with biaxial texture directly on glass.

  19. High efficiency thin film CdTe and a-Si based solar cells

    SciTech Connect (OSTI)

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2000-01-04

    This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and {approximately}9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features and studied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdS{sub x}Te{sub 1{minus}x} films at 10 K and 300 K; collaborated with the National CdTe PV Team on (1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, (2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and (3) preparation of ZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdS{sub x}Te{sub 1{minus}x} alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, and triple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction top cell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure ({approximately}2 {times} 10

  20. SiO2 Fracture: Chemomechanics with a Machine Learning Hybrid QM/MM Scheme |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Argonne Leadership Computing Facility SiO2 Fracture: Chemomechanics with a Machine Learning Hybrid QM/MM Scheme SiO2 Fracture: Chemomechanics with a Machine Learning Hybrid QM/MM Scheme. Close-up of a crack tip in a multiscale quantum mechanical/molecular mechanical (QM/MM) simulation of "stress corrosion" cracking in amorphous silica glass. This project aims to elucidate the role of crack tip chemical reactions involving corrosive species such as water. Petascale computing

  1. Effects of irradiation on the mechanical behavior of twined SiC nanowires

    SciTech Connect (OSTI)

    Jin Enze; Niu Lisha; Lin Enqiang; Duan Zheng [AML, Department of Engineering Mechanics, Tsinghua University, Beijing 100084 (China)

    2013-03-14

    Irradiation is known to bring new features in one-dimensional nano materials. In this study, we used molecular dynamics simulations to investigate the irradiation effects on twined SiC nanowires. Defects tend to accumulate from outside toward inside of the twined SiC nanowires with increasing irradiation dose, leading to a transition from brittle to ductile failure under tensile load. Atomic chains are formed in the ductile failure process. The first-principles calculations show that most of the atomic chains are metallic.

  2. Vehicle Technologies Office Merit Review 2016: Advanced Low-Cost SiC and

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives | Department of Energy Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives Vehicle Technologies Office Merit Review 2016: Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives Presentation given by Wolfspeed at the 2016 DOE Vehicle Technologies Office and Hydrogen and Fuel Cells Program Annual Merit Review and Peer

  3. Adsorption of PTCDA on Si(001) − 2 × 1 surface

    SciTech Connect (OSTI)

    Suzuki, Takayuki Yagyu, Kazuma; Tochihara, Hiroshi; Yoshimoto, Yoshihide

    2015-03-14

    Adsorption structures of the 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) molecule on the clean Si(001) − 2 × 1 surface were investigated using scanning tunneling microscopy (STM) experiments in conjunction with first principles theoretical calculations. Four dominant adsorption structures were observed in the STM experiments and their atomic coordinates on the Si(001) surface were determined by comparison between the experimental STM images and the theoretical simulations. Maximizing the number of the Si—O bonds is more crucial than that of the Si—C bonds in the PTCDA adsorption.

  4. Incorporation of Catalytic Compounds in the Porosity of SiC Wall Flow

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Filters - 4 Way Catalyst and DeNOx Application examples | Department of Energy Incorporation of Catalytic Compounds in the Porosity of SiC Wall Flow Filters - 4 Way Catalyst and DeNOx Application examples Incorporation of Catalytic Compounds in the Porosity of SiC Wall Flow Filters - 4 Way Catalyst and DeNOx Application examples 2007 Diesel Engine-Efficiency & Emissions Research Conference (DEER 2007). 13-16 August, 2007, Detroit, Michigan. Sponsored by the U.S. Department of Energy's

  5. Development of high, stable-efficiency triple-junction a-Si alloy solar cells. Final technical report

    SciTech Connect (OSTI)

    Deng, X.; Jones, S.J.; Liu, T.; Izu, M.

    1998-04-01

    This report summarizes Energy Conversion Devices, Inc.`s (ECD) research under this program. ECD researchers explored the deposition of a-Si at high rates using very-high-frequency plasma MHz, and compared these VHF i-layers with radio-frequency (RF) plasma-deposited i-layers. ECD conducted comprehensive research to develop a {mu}c-Si p{sup +} layer using VHF deposition process with the objectives of establishing a wider process window for the deposition of high-quality p{sup +} materials and further enhancing their performance of a-Si solar cells by improving its p-layers. ECD optimized the deposition of the intrinsic a-Si layer and the boron-doped {mu}c-Si p{sup +} layer to improve the V{sub oc}. Researchers deposited wide-bandgap a-Si films using high hydrogen dilution; investigated the deposition of the ZnO layer (for use in back-reflector) using a sputter deposition process involving metal Zn targets; and obtained a baseline fabrication for single-junction a-Si n-i-p devices with 10.6% initial efficiency and a baseline fabrication for triple-junction a-Si devices with 11.2% initial efficiency. ECD researchers also optimized the deposition parameters for a-SiGe with high Ge content; designed a novel structure for the p-n tunnel junction (recombination layer) in a multiple-junction solar cell; and demonstrated, in n-i-p solar cells, the improved stability of a-Si:H:F materials when deposited using a new fluorine precursor. Researchers investigated the use of c-Si(n{sup +})/a-Si alloy/Pd Schottky barrier device as a tool for the effective evaluation of photovoltaic performance on a-Si alloy materials. Through alterations in the deposition conditions and system hardware, researchers improved their understanding for the deposition of uniform and high-quality a-Si and a-SiGe films over large areas. ECD researchers also performed extensive research to optimize the deposition process of the newly constructed 5-MW back-reflector deposition machine.

  6. SiC-CMC-Zircaloy-4 Nuclear Fuel Cladding Performance during 4-Point Tubular Bend Testing

    SciTech Connect (OSTI)

    IJ van Rooyen; WR Lloyd; TL Trowbridge; SR Novascone; KM Wendt; SM Bragg-Sitton

    2013-09-01

    The U.S. Department of Energy Office of Nuclear Energy (DOE NE) established the Light Water Reactor Sustainability (LWRS) program to develop technologies and other solutions to improve the reliability, sustain the safety, and extend the life of current reactors. The Advanced LWR Nuclear Fuel Development Pathway in the LWRS program encompasses strategic research focused on improving reactor core economics and safety margins through the development of an advanced fuel cladding system. Recent investigations of potential options for “accident tolerant” nuclear fuel systems point to the potential benefits of silicon carbide (SiC) cladding. One of the proposed SiC-based fuel cladding designs being investigated incorporates a SiC ceramic matrix composite (CMC) as a structural material supplementing an internal Zircaloy-4 (Zr-4) liner tube, referred to as the hybrid clad design. Characterization of the advanced cladding designs will include a number of out-of-pile (nonnuclear) tests, followed by in-pile irradiation testing of the most promising designs. One of the out-of-pile characterization tests provides measurement of the mechanical properties of the cladding tube using four point bend testing. Although the material properties of the different subsystems (materials) will be determined separately, in this paper we present results of 4-point bending tests performed on fully assembled hybrid cladding tube mock-ups, an assembled Zr-4 cladding tube mock-up as a standard and initial testing results on bare SiC-CMC sleeves to assist in defining design parameters. The hybrid mock-up samples incorporated SiC-CMC sleeves fabricated with 7 polymer impregnation and pyrolysis (PIP) cycles. To provide comparative information; both 1- and 2-ply braided SiC-CMC sleeves were used in this development study. Preliminary stress simulations were performed using the BISON nuclear fuel performance code to show the stress distribution differences for varying lengths between loading points

  7. Characterization of carrier transport properties in strained crystalline Si wall-like structures in the quasi-quantum regime

    SciTech Connect (OSTI)

    Mayberry, C. S.; Huang, Danhong Kouhestani, C.; Balakrishnan, G.; Islam, N.; Brueck, S. R. J.; Sharma, A. K.

    2015-10-07

    We report the transport characteristics of both electrons and holes through narrow constricted crystalline Si “wall-like” long-channels that were surrounded by a thermally grown SiO{sub 2} layer. The strained buffering depth inside the Si region (due to Si/SiO{sub 2} interfacial lattice mismatch) is where scattering is seen to enhance some modes of the carrier-lattice interaction, while suppressing others, thereby changing the relative value of the effective masses of both electrons and holes, as compared to bulk Si. In the narrowest wall devices, a considerable increase in conductivity was observed as a result of higher carrier mobilities due to lateral constriction and strain. The strain effects, which include the reversal splitting of light- and heavy-hole bands as well as the decrease of conduction-band effective mass by reduced Si bandgap energy, are formulated in our microscopic model for explaining the experimentally observed enhancements in both conduction- and valence-band mobilities with reduced Si wall thickness. Also, the enhancements of the valence-band and conduction-band mobilities are found to be associated with different aspects of theoretical model.

  8. Chemical reactivity of CVC and CVD SiC with UO2 at high temperatures

    SciTech Connect (OSTI)

    Silva, Chinthaka M.; Katoh, Yutai; Voit, Stewart L.; Snead, Lance L.

    2015-02-11

    Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300 C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity, according to microstructural investigations. But, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500 C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500 C. Moreover, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.

  9. Magnetic structures of β{sub I}-Li{sub 2}CoSiO{sub 4} and γ...

    Office of Scientific and Technical Information (OSTI)

    The magnetic structure and properties of the candidate lithium-ion battery cathode materials Pbn2sub 1(Pna2sub 1) Lisub 2CoSiOsub 4 and P2sub 1n Lisub 2MnSiOsub 4 ...

  10. Effects of nano-SiO{sub 2} particles on surface tracking characteristics of silicone rubber composites

    SciTech Connect (OSTI)

    Liu, Yong Li, Zhonglei; Du, Boxue

    2014-09-08

    Compared with neat silicone rubber composites (SiRCs), SiRCs filled with nano-sized SiO{sub 2} particles at weight ratios from 0.1 to 1.0?wt.?% exhibit a higher surface flashover voltage and a greater resistance to surface tracking. Scanning electron microscopy images of tracking morphologies indicate that the SiO{sub 2} particles are situated in close proximity to the polymeric chains and act as bridges to stabilize the chains and maintain the structure of the composite. Higher concentrations of nano-sized SiO{sub 2} particles, however, (above 0.3?wt.?%) produce defects in the molecular network which lead to reductions in both the surface flashover voltage and the resistance to surface tracking, although these reduced values are still superior to those of neat SiRCs. Therefore, SiRCs filled with nano-sized SiO{sub 2} particles, especially at an optimal weight ratio (0.1 to 0.3?wt.?%), may have significant potential applications as outdoor insulators for power systems.

  11. Ultrathin nanosheets of CrSiTe3. A semiconducting two-dimensional ferromagnetic material

    SciTech Connect (OSTI)

    Lin, Ming -Wei; Zhung, Houlong L.; Yan, Jiaqiang; Ward, Thomas Zac; Puretzky, Alexander A.; Rouleau, Christopher M.; Gai, Zheng; Liang, Liangbo; Meunier, Vincent; Ganesh, Panchapakesan; Kent, Paul R. C.; Sumpter, Bobby G.; Mandrus, David G.; Geohegan, David B.; Xiao, Kai

    2015-11-27

    Finite range ferromagnetism and antiferromagnetism in two-dimensional (2D) systems within an isotropic Heisenberg model at non-zero temperature were originally proposed to be impossible. However, recent theoretical studies using an Ising model have recently shown that 2D magnetic crystals can exhibit magnetism. Experimental verification of existing 2D magnetic crystals in this system has remained elusive. In this work we for the first time exfoliate the CrSiTe3, a bulk ferromagnetic semiconductor, to mono- and few-layer 2D crystals onto a Si/SiO2 substrate. The Raman spectra show the good stability and high quality of the exfoliated flakes, consistent with the computed phonon spectra of 2D CrSiTe3, giving a strong evidence for the existence of 2D CrSiTe3 crystals. When the thickness of the CrSiTe3 crystals is reduced to few-layers, we observed a clear change in resistivity at 80~120 K, consistent with the theoretical calculations on the Curie temperature (Tc) of ~80 K for the magnetic ordering of 2D CrSiTe3 crystals. As a result, the ferromagnetic mono- and few-layer 2D CrSiTe3 indicated here should enable numerous applications in nano-spintronics.

  12. Simultaneous presence of (Si{sub 3}O{sub 10}){sup 8−} and (Si{sub 2}O{sub 7}){sup 6−} groups in new synthetic mixed sorosilicates: BaY{sub 4}(Si{sub 2}O{sub 7})(Si{sub 3}O{sub 10}) and isotypic compounds, studied by single-crystal X-ray diffraction, Raman spectroscopy and DFT calculations

    SciTech Connect (OSTI)

    Wierzbicka-Wieczorek, Maria; Többens, Daniel M.; Kolitsch, Uwe; Tillmanns, Ekkehart

    2013-11-15

    Three new, isotypic silicate compounds, BaY{sub 4}(Si{sub 2}O{sub 7})(Si{sub 3}O{sub 10}), SrYb{sub 4}(Si{sub 2}O{sub 7})(Si{sub 3}O{sub 10}) and SrSc{sub 4}(Si{sub 2}O{sub 7})(Si{sub 3}O{sub 10}), were synthesized using high-temperature flux growth techniques, and their crystal structures were solved from single-crystal X-ray intensity data: monoclinic, P2{sub 1}/m, with a=5.532(1)/5.469(1)/5.278(1), b=19.734(4)/19.447(4)/19.221(4), c=6.868(1)/6.785(1)/6.562(1) Å, β=106.53(3)/106.20(3)/106.50(3)°, V=718.8(2)/693.0(2)/638.3(2) Å{sup 3}, R(F)=0.0225/0.0204/0.0270, respectively. The topology of the novel structure type contains isolated horseshoe-shaped Si{sub 3}O{sub 10} groups (Si–Si–Si=93.15–95.98°), Si{sub 2}O{sub 7} groups (Si–O{sub bridge}–Si=180°, symmetry-restricted) and edge-sharing M(1)O{sub 6} and M(2)O{sub 6} octahedra. Single-crystal Raman spectra of the title compounds were measured and compared with Raman spectroscopic data of chemically and topologically related disilicates and trisilicates, including BaY{sub 2}(Si{sub 3}O{sub 10}) and SrY{sub 2}(Si{sub 3}O{sub 10}). The band assignments are supported by additional theoretical calculation of Raman vibrations by DFT methods. - Graphical abstract: View of BaY{sub 4}(Si{sub 2}O{sub 7})(Si{sub 3}O{sub 10}) along [100], showing zigzag chains and the tri- and disilicate groups. The unit cell is outlined. Display Omitted - Highlights: • We report a novel interesting crystal structure type for mixed sorosilicates containing Y, Yb, and Sc. • Synthesis of such mixed sorosilicates is possible by a high-temperature flux-growth technique. • Calculation of Raman vibrations by advanced DFT methods allows a considerably improved interpretation of measured Raman spectra.

  13. Annealing temperature and barrier thickness effect on the structural and optical properties of silicon nanocrystals/SiO₂ superlattices

    SciTech Connect (OSTI)

    López-Vidrier, J. Hernández, S.; López-Conesa, L.; Peiró, F.; Garrido, B.; Hiller, D.; Gutsch, S.; Zacharias, M.; Estradé, S.

    2014-10-07

    The effect of the annealing temperature and the SiO₂ barrier thickness of silicon nanocrystal (NC)/SiO₂ superlattices (SLs) on their structural and optical properties is investigated. Energy-filtered transmission electron microscopy (TEM) revealed that the SL structure is maintained for annealing temperatures up to 1150 °C, with no variation on the nanostructure morphology for different SiO₂ barrier thicknesses. Nevertheless, annealing temperatures as high as 1250 °C promote diffusion of Si atoms into the SiO₂ barrier layers, which produces larger Si NCs and the loss of the NC size control expected from the SL approach. Complementary Raman scattering measurements corroborated these results for all the SiO₂ and Si-rich oxynitride layer thicknesses. In addition, we observed an increasing crystalline fraction up to 1250 °C, which is related to a decreasing contribution of the suboxide transition layer between Si NCs and the SiO₂ matrix due to the formation of larger NCs. Finally, photoluminescence measurements revealed that the emission of the superlattices exhibits a Gaussian-like lineshape with a maximum intensity after annealing at 1150 °C, indicating a high crystalline degree in good agreement with Raman results. Samples submitted to higher annealing temperatures display a progressive emission broadening, together with an increase in the central emission wavelength. Both effects are related to a progressive broadening of the size distribution with a larger mean size, in agreement with TEM observations. On the other hand, whereas the morphology of the Si NCs is unaffected by the SiO₂ barrier thickness, the emission properties are slightly modified. These observed modifications in the emission lineshape allow monitoring the precipitation process of Si NCs in a direct non-destructive way. All these experimental results evidence that an annealing temperature of 1150 °C and 1-nm SiO₂ barrier can be reached whilst preserving the SL structure, being

  14. Effect of carbon ion irradiation on Ag diffusion in SiC

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Leng, Bin; Ko, Hyunseok; Gerczak, Tyler J.; Deng, Jie; Giordani, Andrew J.; Hunter, Jerry L.; Morgan, Dane; Szlufarska, Izabela; Sridharan, Kumar

    2015-11-14

    Transport of Ag fission product through the silicon-carbide (SiC) diffusion barrier layer in TRISO fuel particles is of considerable interest given the application of this fuel type in high temperature gas-cooled reactor (HTGR) and other future reactor concepts. The reactor experiments indicate that radiation may play an important role in release of Ag; however so far the isolated effect of radiation on Ag diffusion has not been investigated in controlled laboratory experiments. In this study, we investigate the diffusion couples of Ag and polycrystalline 3C–SiC, as well as Ag and single crystalline 4H–SiC samples before and after irradiation with C2+more » ions. The diffusion couple samples were exposed to temperatures of 1500 °C, 1535 °C, and 1569 °C, and the ensuing diffusion profiles were analyzed by secondary ion mass spectrometry (SIMS). We found that diffusion coefficients calculated from these measurements indicate that Ag diffusion was greatly enhanced by carbon irradiation due to a combined effect of radiation damage on diffusion and the presence of grain boundaries in polycrystalline SiC samples.« less

  15. A SiC NMOS Linear Voltage Regulator for High-Temperature Applications

    SciTech Connect (OSTI)

    Valle-Mayorga, JA; Rahman, A; Mantooth, HA

    2014-05-01

    The first SiC integrated circuit linear voltage regulator is reported. The voltage regulator uses a 20-V supply and generates an output of 15 V, adjustable down to 10 V. It was designed for loads of up to 2 A over a temperature range of 25-225 degrees C. It was, however, successfully tested up to 300 degrees C. The voltage regulator demonstrated load regulations of 1.49% and 9% for a 2-A load at temperatures of 25 and 300 degrees C, respectively. However, the load regulation is less than 2% up to 300 degrees C for a 1-A load. The line regulation with a 2-A load at 25 and 300 degrees C was 17 and 296 mV/V, respectively. The regulator was fabricated in a Cree 4H-SiC 2-mu m experimental process and consists of 1000, 32/2-mu m NMOS depletion MOSFETs as the pass device, an integrated error amplifier with enhancement MOSFETs, and resistor loads, and uses external feedback and compensation networks to ensure operational integrity. It was designed to be integrated with high-voltage vertical power MOSFETs on the same SiC substrate. It also serves as a guide to future attempts for voltage regulation in any type of integrated SiC circuitry.

  16. Chemical vapor deposition of W-Si-N and W-B-N

    DOE Patents [OSTI]

    Fleming, James G.; Roherty-Osmun, Elizabeth Lynn; Smith, Paul M.; Custer, Jonathan S.; Jones, Ronald V.; Nicolet, Marc-A.; Madar, Roland; Bernard, Claude

    1999-01-01

    A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.

  17. Chemical vapor deposition of W-Si-N and W-B-N

    DOE Patents [OSTI]

    Fleming, J.G.; Roherty-Osmun, E.L.; Smith, P.M.; Custer, J.S.; Jones, R.V.; Nicolet, M.; Madar, R.; Bernard, C.

    1999-06-29

    A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF[sub 6], either silicon or boron, and nitrogen. The result is a W-Si-N or W-B-N thin film useful for diffusion barrier and micromachining applications. 10 figs.

  18. Facet-selective nucleation and conformal epitaxy of Ge shells on Si nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Nguyen, Binh -Minh; Swartzentruber, Brian; Ro, Yun Goo; Dayeh, Shadi A.

    2015-10-08

    Knowledge of nanoscale heteroepitaxy is continually evolving as advances in material synthesis reveal new mechanisms that have not been theoretically predicted and are different than what is known about planar structures. In addition to a wide range of potential applications, core/shell nanowire structures offer a useful template to investigate heteroepitaxy at the atomistic scale. We show that the growth of a Ge shell on a Si core can be tuned from the theoretically predicted island growth mode to a conformal, crystalline, and smooth shell by careful adjustment of growth parameters in a narrow growth window that has not been exploredmore » before. In the latter growth mode, Ge adatoms preferentially nucleate islands on the {113} facets of the Si core, which outgrow over the {220} facets. Islands on the low-energy {111} facets appear to have a nucleation delay compared to the {113} islands; however, they eventually coalesce to form a crystalline conformal shell. As a result, synthesis of epitaxial and conformal Si/Ge/Si core/multishell structures enables us to fabricate unique cylindrical ring nanowire field-effect transistors, which we demonstrate to have steeper on/off characteristics than conventional core/shell nanowire transistors.« less

  19. Intruder negative-parity states of neutron-rich {sup 33}Si

    SciTech Connect (OSTI)

    Wang, Z. M.; Chapman, R.; Liang, X.; Burns, M.; Hodsdon, A.; Keyes, K.; Kumar, V.; Papenberg, A.; Smith, J. F.; Spohr, K. M.; Haas, F.; Bouhelal, M.; Caurier, E.; Curien, D.; Nowacki, F.; Azaiez, F.; Ibrahim, F.; Verney, D.; Behera, B. R.; Corradi, L.

    2010-06-15

    Yrast states in the neutron-rich {sub 14}{sup 33}Si{sub 19} nucleus have been studied using binary grazing reactions produced by the interaction of a 215-MeV beam of {sup 36}S ions with a thin {sup 208}Pb target. An experimental setup that combines the large-acceptance magnetic spectrometer PRISMA and the high-efficiency gamma-ray detection array CLARA was used in the experiment. Four new gamma-ray photopeaks at energies of 971, 1724, 1772, and 2655 keV were observed and assigned to the {sup 33}Si level scheme. The experimental level scheme is compared with the results of 1(Planck constant/2pi)omega p-sd-pf large-scale shell-model calculations using the recently developed PSDPFB effective interaction; good agreement is obtained. The structure of the populated states of {sup 33}Si is discussed within the context of an odd neutron coupled to states of the {sup 32}Si core.

  20. A-Si:H solar cells deposited by the hot wire method

    SciTech Connect (OSTI)

    Iwaniczko, E.; Nelson, B.P.; Molenbroek, E.C.; Schropp, R.; Crandall, R.S.; Mahan, A.H. )

    1994-06-30

    We demonstrate the deposition of a hybrid a-Si:H solar cell in a new research reactor, where we deposit the doped layers by glow discharge and the intrinsic layer by hot wire. After only 10 depositions, we obtained solar cell conversion efficiencies of 7%. We are currently pursuing research avenues which we expect will lead to higher efficiencies.