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We encourage you to perform a real-time search of NLEBeta
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1

Kentucky & Tennessee TOBACCOProduc tion Guide  

E-Print Network [OSTI]

2009-2010 Kentucky & Tennessee TOBACCOProduc tion Guide ID-160 F KENTUCKY COLLEGE OF AGRICULTURE. University of Kentucky Authors Kenny Seebold, Editor Department of Plant Pathology Bob Pearce, Co of Biosystems and Agricultural Engineering 2009-2010 Kentucky & Tennessee TOBACCO Produc tion Guide University

Tennessee, University of

2

commercializaTion office Agriculture  

E-Print Network [OSTI]

Technology commercializaTion office Agriculture ·Biotechnology ·Blueberries ·Cotton ·Forages Utilization, Renewable Energy ·Algalbiofuels ·Biodiesel ·Biomassengineering ·Biomasspre,skincare,andwoundhealing ·Vaccines Information Technology ·Bioinformaticstools ·Imagerenderingandenhancement ·3

Arnold, Jonathan

3

nanofabricaTion A Resource for Nanoscience  

E-Print Network [OSTI]

The nanofabricaTion cenTer A Resource for Nanoscience and Technology WorKinG WiTh US be appropriate. These projects are directed to more fundamental nanoscience issues, and provide a basis

Blanchette, Robert A.

4

si  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C.Greentnv~ronmenrar ivronrrorrngAC T S3si :ri;

5

Sandia National Laboratories: hydrocarbon combus-tion  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1development Sandia,evaluatingfullhigher-performance spar caphydrocarbon combus-tion

6

Semiconducting chalcogenide buffer layer for oxide heteroepitaxy on Si,,001...  

E-Print Network [OSTI]

controlled laminar growth of a crystalline transition metal oxide on Si 001 without SiOx or silicide/or silicides at the Si/oxide interface. Subnanometer buffer layers can prevent interface reac- tions while, also enables flexible strain relief. We observe nei- ther oxide nor silicide formation at the buried Si

Olmstead, Marjorie

7

SANDIA COKPOK4TION SANDIA BASE, .QLDUQUERQUE. N. M.  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545*.MSE&.17- I1/066/04SANDIA COKPOK4TION

8

TransBorder 2035 Metropolitan Transportation Plan  

E-Print Network [OSTI]

i TransBorder 2035 Metropolitan Transportation Plan November 16, 2007 El Paso Metropolitan Planning Organization www.elpasompo.org ii TransBorder 2035 Metropolitan Transportation Plan November 16, 2007... El Paso Metropolitan Planning Organization www.elpasompo.org iii TransBorder 2035 Metropolitan Transportation Plan November 16, 2007 El Paso Metropolitan Planning Organization www.elpasompo.org iv Trans...

El Paso Metropolitan Planning Organization

2007-11-16T23:59:59.000Z

9

Aqueous, Room Temperature Electrochemical Deposition of Compact Si Films  

E-Print Network [OSTI]

. For all Si deposi- tion experiments, the Al sample was rotated at 850 rpm with a rotat- ing disc electrode scanning electron microscope (FESEM), following Au=Pd sputtering. X-ray diffraction measure- ments were

Suni, Ian Ivar

10

EFRIGERATION OF FISH -PART 4 PRE PARA TION, FRE EZI NG,  

E-Print Network [OSTI]

EFRIGERATION OF FISH - PART 4 PRE PARA TION, FRE EZI NG, AND COLD STORAGE OF FISH, SHELLFISH Washington 25, D. C. 1956 REFRI GERATION OF FISH: PART FOUR PREPARATION, FREEZING, AND COLD STORAGE OF FISH

11

TransForum | Argonne National Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassiveSubmittedStatusButler Tina ButlerTodayTransForum TransForum TransForum is the

12

Vinylboranes as trans-dihydroxyethylene equivalents in Diels-Alder reactions  

E-Print Network [OSTI]

-Bicyclo[2. 2. 1]hept-5-en-2, 3-diol (54), . trans-3-Methyl-3-cyclohexen-1, 6-diol (55) . . REFERENCES VITA Page 65 66 66 67 68 69 69 70 70 71 72 73 74 74 75 77 80 LIST OF TABLES TABLE I Reaction Conditions and Yields of the Oxidized... is the opposite of vinyl-9-BBN, which forms mainly the meta-substituted product. 15 Scheme 10 CHs 3 1. 144 h, 85 C 2. HzOz, NaOH 63% CHs OH + SiMes 88: 12 CHs , , SiMes OH Other dialkyl-vinylboranes, such as vinyl-3, 6-dimethylborepane...

Redman, Aniko Maria

2012-06-07T23:59:59.000Z

13

Opportunistic infrastructure : the Trans-Manhattan Expressway  

E-Print Network [OSTI]

Urban Infrastructure: bridges, expressways, and on and off ramps often create barriers and uninhabitable spaces within the urban context. This phenomenon is evident in northern Manhattan where the Trans-Manhattan Expressway ...

O'Koren, Jason F

2010-01-01T23:59:59.000Z

14

maintenance. This research is relevant to opera-tions and maintenance challenges facing aging  

E-Print Network [OSTI]

the need for preventive maintenance or other diagnostic activities on the physical system. Simulationsmaintenance. This research is relevant to opera- tions and maintenance challenges facing aging-benefit of extending the time between overhauls. reducing the probability of a failure in the field. and preventive

15

Tag der InnovaTIon Fokus WerksToFFWIssenschaFTen  

E-Print Network [OSTI]

Tag der InnovaTIon Fokus WerksToFFWIssenschaFTen auFTakTveransTalTung zur MITarbe erfolg. ein beitrag dazu soll der,,Tag der Innovation ­ Fokus Werkstoffwissenschaften" sein, der am 26 des zentralinstitutes für neue Materialien und Prozesstechnik und des Fraunhofer-Institutes ezr

Fiebig, Peter

16

China For all ages a MulTi-generaTional exPloraTion  

E-Print Network [OSTI]

China For all ages a MulTi-generaTional exPloraTion The greaT Wall, TerraCoTTa Warriors & The MighCTuresque China Experience the Delights of a Well-Crafted Family Tour Dear Princetonian, Join Princeton Journeys, June 27 ­ July 9, 2013, for a comprehensive tour of China designed with families in mind. Explore

Rowley, Clarence W.

17

SEASONAL V A R IA TIONS IN STRUCTURE AND CIRCULATION IN THE RED SEA  

E-Print Network [OSTI]

SEASONAL V A R IA TIONS IN STRUCTURE AND CIRCULATION IN THE RED SEA A DISSERTATION SUBMITTE D and surface circulation in the Red Sea, occur r ing along the north-south axis of the Sea and extending fr om on in the northern Red Sea is frorn the nor th-northwest throughout the year' during the winter ( fr om October

Luther, Douglas S.

18

Harvesting, Curing, Stripping, and Marketing 8 2008 Burley ToBacco ProducTion Guide  

E-Print Network [OSTI]

Harvesting, Curing, Stripping, and Marketing 8 2008 Burley ToBacco ProducTion Guide HARVESTING, CURING, STRIPPING, AND MARkETING Danny R. Peek, Extension Specialist, Burley Tobacco Harvesting Growers should only harvest mature, ripe tobacco. Burley tobac- co usually matures and is ready for harvest three

Liskiewicz, Maciej

19

Cooperative Spectrum Sensing and Localiza-tion in Cognitive Radio Systems using Com-  

E-Print Network [OSTI]

Cooperative Spectrum Sensing and Localiza- tion in Cognitive Radio Systems using Com- pressed features in cog- nitive radio systems (CRS): spectrum sensing and location awareness in a single compressed implementing a cognitive radio system. The major problem for spectrum sensing arises in wideband radio, when

Gesbert, David

20

Biotransformation of trans-1-chloro-3,3,3-trifluoropropene (trans-HCFO-1233zd)  

SciTech Connect (OSTI)

trans-1-Chloro-3,3,3-trifluoropropene (trans-HCFO-1233zd) is a novel foam blowing and precision cleaning agent with a very low impact for global warming and ozone depletion. trans-HCFO-1233zd also has a low potential for toxicity in rodents and is negative in genotoxicity testing. The biotransformation of trans-HCFO-1233zd and kinetics of metabolite excretion with urine were assessed in vitro and in animals after inhalation exposures. For in vitro characterization, liver microsomes from rats, rabbits and humans were incubated with trans-HCFO-1233zd. Male Sprague Dawley rats and female New Zealand White rabbits were exposed to 2,000, 5,000 and 10,000 ppm for 6 h and urine was collected for 48 h after the end of the exposure. Study specimens were analyzed for metabolites using {sup 19}F NMR, LC-MS/MS and GC/MS. S-(3,3,3-trifluoro-trans-propenyl)-glutathione was identified as predominant metabolite of trans-HCFO-1233zd in all microsomal incubation experiments in the presence of glutathione. Products of the oxidative biotransformation of trans-HCFO-1233zd were only minor metabolites when glutathione was present. In rats, both 3,3,3-trifluorolactic acid and N-acetyl-(3,3,3-trifluoro-trans-propenyl)-L-cysteine were observed as major urinary metabolites. 3,3,3-Trifluorolactic acid was not detected in the urine of rabbits. Quantitation showed rapid excretion of both metabolites in both species (t{sub 1/2} < 6 h) and the extent of biotransformation of trans-HCFO-1233zd was determined as approximately 0.01% of received dose in rabbits and approximately 0.002% in rats. trans-HCFO-1233zd undergoes both oxidative biotransformation and glutathione conjugation at very low rates. The low extent of biotransformation and the rapid excretion of metabolites formed are consistent with the very low potential for toxicity of trans-HCFO-1233zd in mammals. - Highlights: ? No lethality and clinical signs were observed. ? Glutathione S-transferase and cytochrome P-450 dependent biotransformation in vivo. ? Low biotransformation (< 0.01%) and fast metabolite excretion (t{sub 1/2} < 6 h). ? Glutathione adduct as predominant in vitro metabolite in all tested species. ? Toxic metabolites could not be detected in any great extent.

Schmidt, Tobias [Institut fr Toxikologie, Universitt Wrzburg, Versbacher Str. 9, 97078 Wrzburg (Germany); Bertermann, Rdiger [Institut fr Anorganische Chemie, Universitt Wrzburg, Am Hubland, 97074 Wrzburg (Germany); Rusch, George M.; Tveit, Ann [Honeywell, P.O. Box 1057, Morristown, NJ 07962-1057 (United States); Dekant, Wolfgang, E-mail: dekant@toxi.uni-wuerzburg.de [Institut fr Toxikologie, Universitt Wrzburg, Versbacher Str. 9, 97078 Wrzburg (Germany)

2013-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

TransAtlantic Petroleum | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revisionEnvReviewNonInvasiveExplorationUT-gTaguspark JumpDetective:Toyo Aluminium KK JumpMy FoodTransAtlantic

22

Electronic and Molecular Structures of trans-Dioxotechnetium...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

the structure, resulting in inequivalent trans Tc-N and TcO distances. Upon 415 nm excitation at room temperature, the complexes exhibited broad, structureless luminescences with...

23

Microsoft Word - CX-CentraliaTap_Chehalis-Covington_TransAlta...  

Broader source: Energy.gov (indexed) [DOE]

OF: KEP-4 SUBJECT: Environmental Clearance Memorandum Chad Caldwell Customer Service Engineer - TPC-Olympia Proposed Action: Replace aging wood poles on Trans Alta's Centralia Tap...

24

he Web, as we know it, is a collec-tion of human-readable pages that  

E-Print Network [OSTI]

of languages such as the Resource Description Framework (RDF), DAML+OIL, and the more recent Web OntologyT he Web, as we know it, is a collec- tion of human-readable pages that are virtually Web and proposed industry standards for Web services. The SemanticWeb forWeb Services One objective

Yu, Bin

25

Summary We examined the effects of increased transpira-tion demand on xylem hydraulic conductivity and vulnerabil-  

E-Print Network [OSTI]

in response to high evaporative demand and prevent xylem tensions from reaching values that cause catastrophicSummary We examined the effects of increased transpira- tion demand on xylem hydraulic conductivity potential and water potential differences between the soil and the shoot were similar for desert and montane

Maherali, Hafiz

26

The newesT addiTion To The UniversiTy of MinnesoTa's BioMedical  

E-Print Network [OSTI]

The newesT addiTion To The UniversiTy of MinnesoTa's BioMedical discovery disTricT is designed The BUilding's collegial and physical relaTionship To neighBoring faciliTies in The U's BioMedical discovery in the U's Biomedical Discovery District. "The brick, precast concrete, and curtain wall vocabulary

Weiblen, George D

27

ORIGINAL PAPER Selection, trans-species polymorphism, and locus identification  

E-Print Network [OSTI]

ORIGINAL PAPER Selection, trans-species polymorphism, and locus identification of major amphibian populations. Keywords Amphibia . Beta chain . Gene walking . Lithobates . Positive selection balancing selection Electronic supplementary material The online version of this article (doi:10.1007/s00251

Zamudio, Kelly R.

28

Climate change and trans-local solidarities Paul Routledge  

E-Print Network [OSTI]

Climate change and trans-local solidarities Paul Routledge Paul.Routledge@ges.gla.ac.uk This project will consider local responses and adaptations to climate change across a range of different sites

Guo, Zaoyang

29

STUDY OF TRANS-RECTAL NEAR-INFRARED DIFFUSE OPTICAL TOMOGRAPHY CONCURRENT  

E-Print Network [OSTI]

STUDY OF TRANS-RECTAL NEAR-INFRARED DIFFUSE OPTICAL TOMOGRAPHY CONCURRENT WITH TRANS of the requirements for the Degree of DOCTOR OF PHILOSOPHY May, 2010 #12;ii STUDY OF TRANS-RECTAL NEAR-INFRARED supported by the project Trans-rectal Near-Infrared Optical Tomography for Prostate Imaging from DOD

Piao, Daqing

30

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 24, NO. 12, JUNE 15, 2012 1069 Si/Ge Avalanche Photodiodes-Based Electrical  

E-Print Network [OSTI]

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 24, NO. 12, JUNE 15, 2012 1069 Si/Ge Avalanche Photodiodes/Ge-based avalanche photodiode (APD) for the direct genera- tion of ultra-wideband (UWB) frequency comb lines--Avalanche photodiodes (APD), impulse radio (IR), ultra-wideband (UWB). I. INTRODUCTION THERE has been a great scarcity

Bowers, John

31

Photoinduced Desorption of Xe from Porous Si following Ultraviolet Irradiation: Evidence for a Selective and Highly Effective Optical Activity  

E-Print Network [OSTI]

, photovoltaics, and photocatalysis [1,2]. Photodissociation of N2O on Si (100) has been studied [3] as a mild) of Xe from porous silicon under UV irradiation. It was found that internal morphology and size of the pores and the excita- tion wavelength strongly affect the overall photoresponse of this system. Two

Asscher, Micha

32

Original Research Magnetic Resonance Image-Guided Trans-Septal  

E-Print Network [OSTI]

vasculature. Key Words: interventional; magnetic resonance imaging; trans-septal catheterization; cardiac; MR with a pigtail catheter in the aorta and the use of His bundle/coronary sinus catheters (1), and, more recently from a percutaneous femoral vein ap- proach. MATERIALS AND METHODS Animal Model The Institutional

Atalar, Ergin

33

Composite Web Services Kung-Kiu Lau and Cuong Tran  

E-Print Network [OSTI]

Composite Web Services Kung-Kiu Lau and Cuong Tran Keywords. Web service, composite service, service composition, component model. Abstract. Currently, composition of web services is done services involved. It is therefore a composition of individual operations, rather than a composition

Lau, Kung-Kiu

34

Trans Boundary Transport of Pollutants by Atmospheric Mineral  

E-Print Network [OSTI]

Trans Boundary Transport of Pollutants by Atmospheric Mineral Dust Y I G A L E R E L , * , U R I D, and solid constituents in the atmosphere (3-11). Uptake of pollutants by mineral dust has been shown Jerusalem, Israel The transport of anthropogenic pollution by desert dust in the Eastern Mediterranean

Einat, Aharonov

35

TransNIEMO: ECONOMIC IMPACT ANALYSIS USING A MODEL  

E-Print Network [OSTI]

TransNIEMO: ECONOMIC IMPACT ANALYSIS USING A MODEL OF CONSISTENT INTERREGIONAL ECONOMIC AND HIGHWAY of Industrial and Systems Engineering; and the School of Policy Planning and Development Qisheng Pan, Associate of Industrial and Systems Engineering JoongKoo Cho Epstein Department of Industrial and Systems Engineering

Wang, Hai

36

Graphene as a subnanometre trans-electrode , W. Hubbard2  

E-Print Network [OSTI]

#12;LETTERS Graphene as a subnanometre trans-electrode membrane S. Garaj1 , W. Hubbard2 , A. Reina3 of graphite, called graphene, have recently been the subject of intense research with the hope that practical and elec- trical sensitivity of graphene motivated us to investigate the poten- tial use of graphene

Golovchenko, Jene A.

37

Campus Sustainability Planetary Health Ecological Design Social and Environmental Enterprise Incuba-tion EcoVillages Sustainable Food Systems Ecoliteracy Solutions Journal Campus Systems Model Energy  

E-Print Network [OSTI]

Villages Sustainable Food Systems Ecoliteracy Solutions Journal Campus Systems Model Energy Conservation, Efficiency1 Campus Sustainability Planetary Health Ecological Design Social and Environmental Enterprise Incuba- tion EcoVillages Sustainable Food Systems Ecoliteracy Solutions Journal Campus Systems Model

Hayden, Nancy J.

38

CUSSSFIC4TION CMUXLLq  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou areDowntown Site -MiamiYVE r.x-L* d! CT NC0 - i

39

The SpallaTion  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-Up from theDepartment of Energy TechnicalFlowNationTheDepartmentDepartmentGrid:

40

Deseret Generation & Tran Coop | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating Solar Power Basics (The following text09-0018-CXBasinDeseret Generation & Tran

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

X-Ray And Polarized Neutron Reflectometry: Characterization Of Si/Co/Si And Si/Ni/Si Systems  

SciTech Connect (OSTI)

Technologically important metal silicides formed through interdiffusion in metal/Si systems has been probed using two complementary techniques viz. x-ray reflectivity (XRR) and polarized neutron reflectivity (PNR). Both structural and magnetic characterization with good depth resolution has been achieved in these systems. We have studied two systems Si/Co/Si and Si/Ni/Si which relate to important applications in ferromagnetic/ non-magnetic semiconductor layered structures for memory devices.

Bhattacharya, Debarati; Basu, Saibal [Solid State Physics Division, Bhabha Atomic Research Center, Mumbai, Maharastra 400085 (India); Poswal, A. K. [Applied Spectroscopy Division, Bhabha Atomic Research Center, Mumbai, Maharastra 400085 (India); Roy, S.; Dev, B. N. [Department of Materials Science, Indian Association for the Cultivation of Science, 2A and 2B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032 (India)

2010-12-01T23:59:59.000Z

42

Optimal Cropping Strategies Considering Risk: Texas Trans-Pecos.  

E-Print Network [OSTI]

trials. The EPIC (Erosion Productivity Impact Calculator) generalized crop growth model, originally developed by the U.S. Department of Agricul ture (Williams et al., 1984a), was used to develop yield distribu tions for selected row crops and various... ous facets of this study. Their contributions added greatly to the depth and scope of this effort. Numerous other individuals contributed valuable time and energy. James (Jimmy) Williams of the U.S. Department of Agriculture, Blacklands Research...

Ellis, John R.; Lacewell, Ronald D.; Moore, Jaroy; Richardson, James

1990-01-01T23:59:59.000Z

43

Mass of Si-24  

E-Print Network [OSTI]

). ~B. E. Tribbl, J. D. Cossairt, D. P. May, and B. A, Kenefick, Phys. Bev. C 16, 1835 (1977). B. E. Tribble, J. D. Cossairt, and B. A. Kenefick, Phys. Bev. C 15, 2028 (1977). B. E. Tribble, B. A. Kenefick, and B. L. Spross, Phys. Bev. C 13, 50...PHYSICAL REVIEW C VOLUME 22, NUMBER 1 JULY 1980 Mass of Si R. E. Tribble, D. M. Tanner, and A. F. Zeller* Cyclotron Institute and Physics Department, Texas A&M University, College Station, Texas 77843 (Received 11 January 1980) The Si( He, 'He...

Tribble, Robert E.; Tanner, D. M.; Zeller, A. F.

1980-01-01T23:59:59.000Z

44

Meiotic trans-sensing and meiotic silencing in neurospora crassa  

E-Print Network [OSTI]

with permission from DNA methylation affects meiotic trans-sensing, not meiotic silencing, in Neurospora by R. J. Pratt, D. W. Lee and R. Aramayo, 2004. Genetics 168: 1925-1935. Copyright 2004 by The Genetics Society of America. CHAPTER II DNA METHYLATION... correlation was obtained (r 2 = 0.9361, Figure 8A). Third, having validated the dot blot assay, we applied it to the analysis of all sequenced and unsequenced Rsp RIP alleles. For this, we estimated the relative intensities for each allele, normalized...

Pratt, Robert James

2009-05-15T23:59:59.000Z

45

New England Hydro-Trans Corp | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 -Energieprojekte3InformationofServicesNeuCo620572°,York:Hydro-Trans Corp Jump

46

New England Hydro-Tran Elec Co | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating Solar Powerstories onFocus AreaDataBusPFAN) | OpenInc Jump to: navigation,Tran Elec Co

47

TransWest Express LLC TWE | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revisionEnvReviewNonInvasiveExplorationUT-gTaguspark JumpDetective:Toyo Aluminium KK JumpMy FoodTransAtlanticTWE

48

Vermont Electric Trans Co Inc | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating SolarElectric Coop,Save Energy NowNew HampshireValeroTrans Co Inc Jump to: navigation,

49

Integrated Analysis of Market Transformation Scenarios with HyTrans  

SciTech Connect (OSTI)

This report presents alternative visions of the transition of light-duty vehicle transportation in the United States from petroleum to hydrogen power. It is a supporting document to the U.S. Department of Energy's Summary Report, "Analysis of the Transition to a Hydrogen Economy and the Potential Hydrogen Infrastructure Requirements" (U.S. DOE, 2007). Three alternative early transition scenarios were analyzed using a market simulation model called HyTrans. The HyTrans model simultaneously represents the behavior of fuel suppliers, vehicle manufacturers and consumers, explicitly recognizing the importance of fuel availability and the diversity of vehicle choices to consumers, and dependence of fuel supply on the existence of market demand. Competitive market outcomes are simulated by means of non-linear optimization of social surplus through the year 2050. The three scenarios specify different rates and geographical distributions of market penetration for hydrogen fuel cell vehicles from 2012 through 2025. Scenario 1 leads to 2 million vehicles on U.S. roads by 2025, while Scenarios 2 and 3 result in 5 million and 10 million FCVs in use by 2025, respectively. The HyTrans model "costs out" the transition scenarios and alternative policies for achieving them. It then tests whether the scenarios, together with the achievement of the DOE's technology goals for fuel cell vehicles and hydrogen infrastructure technologies could lead to a sustainable transition to hydrogen powered transportation. Given the achievement of DOE's ambitious technology goals, all three scenarios appear to lead to a sustainable transition to hydrogen. In the absence of early transition deployment effort, no transition is likely to begin before 2045. The cumulative costs of the transition scenarios to the government range from $8 billion to $45 billion, depending on the scenario, the policies adopted and the degree of cost-sharing with industry. In the absence of carbon constraining policies, the transition to hydrogen achieves about the same reduction in CO2 emissions as a transition to advanced gasoline-electric hybrid vehicles. With significant carbon policy, drastic reductions in well-to-wheel CO2 emissions are possible. Energy transition modeling is a newly evolving field and much remains to be done to improve the utility of models like HyTrans.

Greene, David L [ORNL; Leiby, Paul Newsome [ORNL; Bowman, David Charles [ORNL

2007-06-01T23:59:59.000Z

50

E-Print Network 3.0 - australia trans-disciplinary research Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

results for: australia trans-disciplinary research Page: << < 1 2 3 4 5 > >> 1 ECOSYSTEM SERVICES AND NRM PRACTICE: WHERE THE Summary: by diffusing knowledge and skills...

51

Towards an InTerdIscIplInary approach To nexT-GeneraTIon BIofuels EnvironmEntal, tEchno-Economic, and GovErnancE  

E-Print Network [OSTI]

Towards an InTerdIscIplInary approach To nexT-GeneraTIon BIofuels EnvironmEntal, t. 2010. The Ecological Impact of Biofuels. Pages 351-377 in D. J. Futuyma, H. B. Shafer, and D. Huffer, S., Roche, C.M., Blanch, H.W., and Clark, D.S. (2012). Escherichia coli for biofuel production

Iglesia, Enrique

52

This paper proposes a method for classification and discrimina-tion of textures based on the energies of image subbands. We  

E-Print Network [OSTI]

, the dimension of the discriminant space and number of energy mea- sures used for classification. We hopeAbstract This paper proposes a method for classification and discrimina- tion of textures based on the energies of image subbands. We show that even with this relatively simple feature set, effective texture

Chang, Shih-Fu

53

TransPlanckian Particles and the Quantization of Time  

E-Print Network [OSTI]

Trans-Planckian particles are elementary particles accelerated such that their energies surpass the Planck value. There are several reasons to believe that trans-Planckian particles do not represent independent degrees of freedom in Hilbert space, but they are controlled by the cis-Planckian particles. A way to learn more about the mechanisms at work here, is to study black hole horizons, starting from the scattering matrix Ansatz. By compactifying one of the three physical spacial dimensions, the scattering matrix Ansatz can be exploited more efficiently than before. The algebra of operators on a black hole horizon allows for a few distinct representations. It is found that this horizon can be seen as being built up from string bits with unit lengths, each of which being described by a representation of the SO(2,1) Lorentz group. We then demonstrate how the holographic principle works for this case, by constructing the operators corresponding to a field in space-time. The parameter t turns out to be quantized in Planckian units, divided by the period R of the compactified dimension.

G. 't Hooft

1998-05-20T23:59:59.000Z

54

Economic Costs and Benefits of the Trans Mountain Expansion Project (TMX)  

E-Print Network [OSTI]

Economic Costs and Benefits of the Trans Mountain Expansion Project (TMX) for BC and Metro.thegoodman.com November 10, 2014 #12;SCHOOL OF PUBLIC POLICY Economic Costs and Benefits of the Trans Mountain Expansion Project (TMX) for BC and Metro Vancouver ii Table of Contents 1 Executive Summary

55

TransForumNews from Argonne's Transportation Research Program www.transportation.anl.gov  

E-Print Network [OSTI]

TransForumNews from Argonne's Transportation Research Program www.transportation.anl.gov Volume 14 Issue 2 2014 Contents #12;TransForumNews from Argonne's Transportation Research Program www.transportation.anl.gov VERIFI Shrinks Combustion Engine Development Cycles to Save Money and Time page 4 Argonne researchers

Kemner, Ken

56

TransForumNews from Argonne's Transportation Research Program www.transportation.anl.gov  

E-Print Network [OSTI]

TransForumNews from Argonne's Transportation Research Program www.transportation.anl.gov Volume 14 Issue 2 2014 #12;TransForumNews from Argonne's Transportation Research Program www.transportation.anl.gov VERIFI Shrinks Combustion Engine Development Cycles to Save Money and Time page 4 Argonne researchers

Kemner, Ken

57

An Introduction to Resurgence, Trans-Series and Alien Calculus  

E-Print Network [OSTI]

In these notes we give an overview of different topics in resurgence theory from a physics point of view, but with particular mathematical flavour. After a short review of the standard Borel method for the resummation of asymptotic series, we introduce the class of simple resurgent functions, explaining their importance in physical problems. We define the Stokes automorphism and the alien derivative and discuss these objects in concrete examples using the notion of trans-series expansion. With all the tools introduced, we see how resurgence and alien calculus allow us to extract non-perturbative physics from perturbation theory. To conclude, we apply Morse theory to a toy model path integral to understand why physical observables should be resurgent functions.

Daniele Dorigoni

2015-01-17T23:59:59.000Z

58

An Introduction to Resurgence, Trans-Series and Alien Calculus  

E-Print Network [OSTI]

In these notes we give an overview of different topics in resurgence theory from a physics point of view, but with particular mathematical flavour. After a short review of the standard Borel method for the resummation of asymptotic series, we introduce the class of simple resurgent functions, explaining their importance in physical problems. We define the Stokes automorphism and the alien derivative and discuss these objects in concrete examples using the notion of trans-series expansion. With all the tools introduced, we see how resurgence and alien calculus allow us to extract non-perturbative physics from perturbation theory. To conclude, we apply Morse theory to a toy model path integral to understand why physical observables should be resurgent functions.

Dorigoni, Daniele

2014-01-01T23:59:59.000Z

59

Trade war in the Pacific: ASEAN and the Trans-Pacific Partnership https://theconversation.edu.au/trade-war-in-the-pacific-asean-and-the-trans-pacific-partnership-10937[3/12/2012 11:38:09 AM  

E-Print Network [OSTI]

Trade war in the Pacific: ASEAN and the Trans-Pacific Partnership https://theconversation.edu.au/trade-war-in-the-pacific-asean-and-the-trans-pacific-partnership-10937[3/12/2012 11:38:09 AM] TC Home + Society Science + Technology Trade war in the Pacific: ASEAN and the Trans-Pacific Partnership 30 November

Botea, Adi

60

Progress in blanket designs using SiCf/SiC composites L. Giancarli a,  

E-Print Network [OSTI]

Progress in blanket designs using SiCf/SiC composites L. Giancarli a, 1, H. Golfier b , S. Nishio c the use of SiCf/SiC composite as structural material for fusion power reactor breeding blanket. SeveralCf/SiC. # 2002 Published by Elsevier Science B.V. Keywords: Blanket designs; SiCf/SiC composites; Self

Raffray, A. René

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Si Wu | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassiveSubmitted forHighlightsSeminars SeminarsO'LearyGlobalMarketSi Wu d3p754 Primary

62

Si Wu | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administrationcontroller systemsBi (2)Sharing Smart GridShift End ShiftShowerheadsShutthaSi Wu

63

Magnesium Silicate Dissolution Investigated by 29Si MAS, 1H-29Si...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Silicate Dissolution Investigated by 29Si MAS, 1H-29Si CP MAS, 25Mg QCPMG, and 1H-25Mg CP QCPMG NMR. Magnesium Silicate Dissolution Investigated by 29Si MAS, 1H-29Si CP MAS, 25Mg...

64

The effect of neutron irradiation on the mechanical properties of C/SiC composites  

SciTech Connect (OSTI)

The effects of neutron irradiation to 3.5 and 9.5 dpa at 730 C on a 2D plain woven carbon fiber reinforced polymer derived SiC matrix composite are presented. For both fluences, the irradiation caused in-plane contraction and trans-plane expansion. Irradiation also caused substantial reduction in composite flexural strength (54%) and increase in flexural tangent modulus (+85%). The extents of dimensional/ mechanical property changes were greater for the higher fluence irradiated samples. Those changes suggest the instability of the polymer derived SiC matrix following irradiation. The nature of the mechanical property changes suggest increased clamping stress between the fiber and the matrix. The composite property changes are explained in terms of irradiation effects on composite constituents and are compared with carbon fiber reinforced carbon matrix composite as a reference material.

Shih, Chunghao [ORNL] [ORNL; Katoh, Yutai [ORNL] [ORNL; Snead, Lance Lewis [ORNL] [ORNL; Steinbeck, John [ORNL] [ORNL

2013-01-01T23:59:59.000Z

65

Synthesis and Characterization of Structured Si-Carbon Nanocomposite...  

Broader source: Energy.gov (indexed) [DOE]

nanoparticles with controlled size and synthesized Si-carbon composites, including Si-graphene and Si@hollow carbon. * Synthesized new polymer binders for Si-based anodes. *...

66

Regulatory Interactions in ProKaryotes from RegTransBase  

DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

RegTransBase, a manually curated database of regulatory interactions in prokaryotes, captures the knowledge in published scientific literature using a controlled vocabulary. RegTransBase describes a large number of regulatory interactions reported in many organisms and contains various types of experimental data, in particular: the activation or repression of transcription by an identified direct regulator determining the transcriptional regulatory function of a protein (or RNA) directly binding to DNA or RNA mapping or prediction of binding sites for a regulatory protein characterization of regulatory mutations Currently, the RegTransBase content is derived from about 3000 relevant articles describing over 7000 experiments in relation to 128 microbes. It contains data on the regulation of about 7500 genes and evidence for 6500 interactions with 650 regulators. RegTransBase also contains manually created position weight matrices (PWM) that can be used to identify candidate regulatory sites in over 60 species. (Specialized Interface)

Dubchak, Inna; Gelfand, Mikhail

67

North American Central Plains conductivity anomaly within the Trans-Hudson orogen in northern Saskatchewan, Canada  

E-Print Network [OSTI]

Saskatchewan, Canada Alan G. Jones } James A. Craven Geological Survey of Canada, 1 Observatory Crescent Magnetotelluric data acquired across the Paleoproterozoic Trans-Hudson orogen, north- ern Saskatchewan, image one

Jones, Alan G.

68

Intern experience at Tech Tran Corporation, Naperville, Illinois: an internship report  

E-Print Network [OSTI]

This report presents a survey of the author's internship experience with Tech Tran Corporation during the period September 3, 1981 through April 30, 1982. The eight month internship was spent as an engineering intern with a small...

Campbell, John Arthur, 1947-

2013-03-13T23:59:59.000Z

69

Phil. Trans. R. Soc. A (2010) 368, 439454 doi:10.1098/rsta.2009.0242  

E-Print Network [OSTI]

Phil. Trans. R. Soc. A (2010) 368, 439­454 doi:10.1098/rsta.2009.0242 Controlling biological & Tyson 2008), and existing oscillations may become more robust (Stricker et al. 2008; Ugander 2008

Daly, Samantha

70

E-Print Network 3.0 - all-trans-retinoic acid-induced postaxial...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

a crush. After- wards, 10 mg of all-trans retinoic acid (Sigma, Deisen- hofen... . Comparison of antler volumes between the experimental side treated with 10 mg of ... Source:...

71

, 20130047, published 2 June 20143722014Phil. Trans. R. Soc. A Walker Smith  

E-Print Network [OSTI]

, 20130047, published 2 June 20143722014Phil. Trans. R. Soc. A Walker Smith Thompson, Sophie Fielding , Damien Guihen , Elizabeth Creed , Je K. Ridley and Walker Smith Centre for Ocean and Atmospheric

Thompson, Andrew

72

, 20130047, published 2 June 20143722014Phil. Trans. R. Soc. A Walker Smith  

E-Print Network [OSTI]

, 20130047, published 2 June 20143722014Phil. Trans. R. Soc. A Walker Smith Thompson, Sophie. Ridley6 and Walker Smith7 1Centre for Ocean and Atmospheric Sciences, School of Environmental Sciences

Stevens, David

73

Intern experience at Tech Tran Corporation, Naperville, Illinois: an internship report  

E-Print Network [OSTI]

This report presents a survey of the author's internship experience with Tech Tran Corporation during the period September 1, 1981 through May 1, 1982. The eight month internship was spent as an associate engineer and associate editor...

Morgan, Joseph Alan, 1947-

2013-03-13T23:59:59.000Z

74

Group velocities in coplanar strip transmission lines on Si and Si/SiO2 /Si substrates measured using differential electro-optic sampling  

E-Print Network [OSTI]

Group velocities in coplanar strip transmission lines on Si and Si/SiO2 /Si substrates measured 1996; accepted for publication 26 August 1996 The group velocities in coplanar strip transmission lines-9 Velocity measurements have been previously carried out for coplanar transmission lines on a variety

75

CLASSIFICdTION CAWXL~ DAm  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou areDowntown Site -MiamiYVE r. awC'COLUMBIA$f

76

Characteristics of phase nucleation and growth during oriented crystallization of alloys of the Si-TaSi/sub 2/ and Si-NbSi/sub 2/ eutectic systems  

SciTech Connect (OSTI)

The authors investigate the effect of the nucleation conditions and the initial concentration of the components on the nature of the change in the phase composition and structure along the length of the directionally crystallized bars of alloys in the Si-TaSi/sub 2/ and Si-NbSi/sub 2/ eutectic systems. The compositions of the investigated alloys are given. The starting materials were silicon of semiconductor purity, tantalum, and niobium produced by electron beam melting. The alloys were crystallized directionally by the Czochralski method. The nature of the structure and the volume ratio of the phases in the investigated alloys depend significantly on the type of seed, i.e., on the nucleation conditions of the eutectic grain. The basic phases in the eutectic alloys of the Si-TaSi/sub 2/ and Si-NbSi/sub 2/ systems are the disilicides TaSi/sub 2/ and NbSi/sub 2/ respectively.

Grabovetskaya, G.P.; Butkevich, L.M.

1987-07-01T23:59:59.000Z

77

3C-SiC Films on Si for MEMS Applications: Mechanical Properties , G. Kravchenko2  

E-Print Network [OSTI]

diamond tip. These results indicate that polycrystalline SiC thin films are attractive for MEMS. In addition, poly-crystalline 3C- SiC was also grown on (100)Si so that a comparison with monocrystaline 3C-SiC, also grown on (100)Si, could be made. The mechanical properties of single crystal and polycrystalline 3

Volinsky, Alex A.

78

Commercialization potential of compositionally graded Ge - Si??x?Gex? - Si substrates for solar applications  

E-Print Network [OSTI]

This project considers the potential of Ge - Si??x?Gex? - Si substrates for solar applications. The use of compositionally graded substrates to achieve heterointegration across different materials platforms such as Si, Ge ...

Goh, Johnathan Jian Ming

2006-01-01T23:59:59.000Z

79

Microwave joining of SiC  

SciTech Connect (OSTI)

The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on identification of the most effective joining methods for scale-up to large tube assemblies, including joining using SiC produced in situ from chemical precursors. During FY 1996, a new microwave applicator was designed, fabricated and tested that provides the capability for vacuum baking of the specimens and insulation and for processing under inert environment. This applicator was used to join continuous fiber-reinforced (CFCC) SiC/SiC composites using a polymer precursor to form a SiC interlayer in situ.

Silberglitt, R.; Ahmad, I.; Tian, Y.L. [FM Technologies, Inc., Fairfax, VA (United States)] [and others

1997-04-01T23:59:59.000Z

80

Statement on trans equality 1. University of Bath recognises that there can be differences between assigned sex and  

E-Print Network [OSTI]

of people living in the gender of their birth and the more fluid identities of many trans people. 2 against people on the grounds of gender identity, intersex conditions or any process of gender reassignment, begun or complete. Where this statement refers to `trans people', it has in mind people living

Burton, Geoffrey R.

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells  

E-Print Network [OSTI]

Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells trapping, for the nc- Si:H absorber in the Si-based thin film solar cells. Furthermore, nc-Si:H is usually bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc- Si) triple-junction solar cell due to its higher optical

Deng, Xunming

82

doi: 10.1098/rsta.2011.0214 , 158-1753702012Phil. Trans. R. Soc. A  

E-Print Network [OSTI]

://rsta.royalsocietypublishing.org/subscriptions go to:Phil. Trans. R. Soc. ATo subscribe to This journal is © 2012 The Royal Society on November 28 tools available to the research community. Keywords: underwater acoustic communication; underwater sensor networks; acoustic modems; high latency; energy efficiency; protocol design 1. Introduction

Heidemann, John

83

EULERIANLAGRANGIAN LOCALIZED ADJOINT METHODS FOR TRANS PORT OF NUCLEARWASTE CONTAMINATION IN POROUS MEDIA  

E-Print Network [OSTI]

EULERIANLAGRANGIAN LOCALIZED ADJOINT METHODS FOR TRANS PORT OF NUCLEARWASTE CONTAMINATION creasingly threatened by organic, inorganic, and radioactive pollutants as well as highlevel nuclear waste developed for use by the Nuclear Regulatory Commission to analyze deep geologic nuclear waste disposal

Ewing, Richard E.

84

Analytical prediction of the location of ductility dip cracking in the trans-varestraint test  

SciTech Connect (OSTI)

Some NiCrFe weld metals exhibit decreased ductility over a temperature range known as the {open_quotes}ductility dip{close_quotes} temperature (DDT) range. Ductility dip cracking (DDT) is a phenomenon which occurs in a zone bounded by the DDT range on its sides and a threshold plastic strain on its bottom as shown in figure 1. Figure 1 illustrates how ductility varies as weld metal cools from the solidus temperature for materials with and without a ductility dip. The purpose of this work is to demonstrate the ability to predict the location of the DDC in a Trans-Varestraint Test (TVT) for a specimen machined from a weld deposited EN52 plate. The DDC predictions require a combination of Trans-Varestraint testing and finite element analysis. The test provides the threshold value of externally applied nominal strain below which DDC does not occur. The analysis provides the corresponding threshold local or peak strain. The threshold local plastic strain level and the DDT range are used to predict the location of the DDC. The ultimate purpose of this work is to evaluate susceptibility of highly constrained, component welds to DDC. Test results for Trans-Varestraint Testing for a weld deposited EN52 plate are reported in reference. The ability to predict the location of the DDC in the Trans-Varestraint Test using the techniques reported herein is demonstrated by showing good comparison between the analytical results and the test data.

Singh, I.; Kroenke, W.; Cola, M.

1997-05-01T23:59:59.000Z

85

IEEE/ACM TRANS. ON NETWORKING, TO APPEAR 1 Utility Optimal Scheduling in Energy Harvesting  

E-Print Network [OSTI]

IEEE/ACM TRANS. ON NETWORKING, TO APPEAR 1 Utility Optimal Scheduling in Energy Harvesting Networks performance in energy harvesting networks with only finite capacity energy storage devices. In these networks, nodes are capable of harvesting energy from the environment. The amount of energy that can be harvested

Huang, Longbo

86

doi: 10.1098/rsta.2011.0219 , 3709-37273702012Phil. Trans. R. Soc. A  

E-Print Network [OSTI]

doi: 10.1098/rsta.2011.0219 , 3709-37273702012Phil. Trans. R. Soc. A Jason D. Biggs, Judith A. Voll. BIGGS, JUDITH A. VOLL AND SHAUL MUKAMEL* Department of Chemistry, University of California, Irvine, CA.royalsocietypublishing.orgDownloaded from #12;3710 J. D. Biggs et al. higher dimensional spectroscopy offers the possibility to resolve

Mukamel, Shaul

87

The Most Reactive Amide As a Transition-State Mimic For cis?trans Interconversion  

E-Print Network [OSTI]

for the enzyme-catalyzed cistrans rotamer interconversion of amides involved in peptide and protein folding and function. The stabilization of the amide group in its high energy, perpendicular conformation common to both systems is shown for the rigid tricyclic...

Komarov, Igor V.; Yanik, Stanislav; Ishchenko, Aleksandr Yu.; Davies, John E.; Goodman, Jonathan M.; Kirby, Anthony J.

2014-12-22T23:59:59.000Z

88

J. Chem. Soc., Dalton Trans., 1997, Pages 17391745 1739 Electrochemistry of the coppernickel series of heteropolymetallic  

E-Print Network [OSTI]

DALTON J. Chem. Soc., Dalton Trans., 1997, Pages 17391745 1739 Electrochemistry of the coppernickel, Northeastern University, Boston, MA 02115, USA The electrochemistry of the tetranuclear coppernickel as supporting electrolyte. At potentials more cathodic than 1.0 V the complexes are electrodeposited as Cu

Kounaves, Samuel P.

89

NIH POLICY MANUAL 3047 -TRANS-NIH ANIMAL FACILITY SECURITY PROGRAM  

E-Print Network [OSTI]

NIH POLICY MANUAL 3047 - TRANS-NIH ANIMAL FACILITY SECURITY PROGRAM Issuing Office: OD for obtaining approval from the NIH, ORS, Division of Physical Security Management (DPSM), before beginning any construction, renovation or major equipment installation in NIH owned or leased animal facilities, including

Bandettini, Peter A.

90

ACCEPTED TO IEEE TRANS. IMAGE PROCESSING. AUGUST 2007 1 EntropyControlled Quadratic Markov Measure  

E-Print Network [OSTI]

ACCEPTED TO IEEE TRANS. IMAGE PROCESSING. AUGUST 2007 1 Entropy­Controlled Quadratic Markov Measure analy- sis and image editing tasks. Its importance for low-level image processing stems from several, reduction in memory requirements or error reduction will have an important impact in many image processing

Rivera, Mariano

91

http://mc.manuscriptcentral.com/issue-ptrsa Submitted to Phil. Trans. R. Soc. A -Issue  

E-Print Network [OSTI]

strong correlation between rates of metals usage and Gross Domestic Product (GDP) (R2 = 0.79), with per on the order of a third of the total worldwide primary energy use per year (~ 160 EJ), and contributing://mc.manuscriptcentral.com/issue-ptrsa Submitted to Phil. Trans. R. Soc. A - Issue #12;ForReview Only 1 The Energy Required to Produce Materials

Gutowski, Timothy

92

EIS-0139: Trans-Alaska Gas System Final Environmental Impact Statement  

Broader source: Energy.gov [DOE]

This EIS analyzes the Yukon Pacific Corporation (YPC) proposed construction of the Trans-Alaska Gas System (TAGS) a 796.5 mile long 36-inch diameter pipeline to transport High Pressured Natural Gas between Prudhoe Bay and a Tidewater terminal and LNG Plant near Anderson Bay, AK.

93

Initial Tests for an Analog Continuum Correlator for CMB Interferometry Huan T. Tran  

E-Print Network [OSTI]

: Lyman Page Abstract We are proposing to build a high frequency interferometer to study the CMB;2 Initial Tests for an Analog Continuum Correlator for CMB Interferometry Huan T. Tran Abstract We-15) and work below 35 GHz and hence rely heavily on HEMT technology. We are in the initial planning stages

94

Expression and Trans-Specific Polymorphism of Self-Incompatibility RNases in Coffea (Rubiaceae)  

E-Print Network [OSTI]

Expression and Trans-Specific Polymorphism of Self- Incompatibility RNases in Coffea (Rubiaceae Recherche ``Re´sistance des Plantes aux Bioagresseurs'', Montpellier, France Abstract Self-incompatibility understory trees in which the vast majority of diploid species utilize a mechanism of gametophytic self-incompatibility

Yoder, Anne

95

Cotton Performance Tests in the Texas High Plains and Trans-Pecos Areas of Texas 20081/  

E-Print Network [OSTI]

Cotton Performance Tests in the Texas High Plains and Trans-Pecos Areas of Texas 20081/ J.K. Dever; Area Agronomist-Cotton, Extension Entomologist, Texas AgriLife Extension, Lubbock; Research Scientist......................................................................................................................... 6 Table UNIFORM COTTON VARIETY TESTS - IRRIGATED Lubbock 1 Production Information

Mukhtar, Saqib

96

Cotton Performance Tests in the Texas High Plains and Trans-Pecos Areas of Texas 20071/  

E-Print Network [OSTI]

Cotton Performance Tests in the Texas High Plains and Trans-Pecos Areas of Texas 20071/ J, Lubbock; Area Agronomist-Cotton, Extension Program Specialist, Texas AgriLife Extension, Lubbock; Research......................................................................................................................... 6 Table COTTON VARIETY TESTS - IRRIGATED Lamesa 1 Production Information

Mukhtar, Saqib

97

SiNode Systems | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

University SiNode Systems is a battery materials venture developing silicon-graphene anodes for the next generation of lithium-ion batteries. SiNode anodes offer higher...

98

Effect of Si substrate on interfacial SiO{sub 2} scavenging in HfO{sub 2}/SiO{sub 2}/Si stacks  

SciTech Connect (OSTI)

The scavenging kinetics of an ultra-thin SiO{sub 2} interface layer (SiO{sub 2}-IL) in an HfO{sub 2}/SiO{sub 2}/Si stack is discussed by focusing on the substrate effect in addition to oxygen diffusion. {sup 18}O tracing experiments demonstrate that the O-atom moves from the SiO{sub 2}-IL to the HfO{sub 2} layer during scavenging. SiO{sub 2}-IL scavenging with various substrates (Si, SiC, and sapphire) has been found to be significantly different, which suggests that the Si in the substrate is also necessary to continuously cause the scavenging. Based on these findings and thermodynamic considerations, a kinetic model where oxygen vacancy (V{sub O}) transferred from the HfO{sub 2} reacts with the SiO{sub 2}, which is in contact with the Si-substrate, is proposed for the SiO{sub 2}-IL scavenging.

Li, Xiuyan, E-mail: xiuyan@adam.t.u-tokyo.ac.jp; Yajima, Takeaki; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

2014-11-03T23:59:59.000Z

99

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication Applications  

E-Print Network [OSTI]

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication ApplicationsGe/Si-based optoelectronic devices are described. These include photodiodes, photoreceivers and modulators. In There is immense interest in the realization of Si-based optoelectronic devices, optoelectronic integrated circuits

Rieh, Jae-Sung

100

Rsistance au dommage local de basse nergie d'un composite SiC/SiC  

E-Print Network [OSTI]

. These results can be compared to impact resistance of ceramic matrix composites published in the literatureRésistance au dommage local de basse énergie d'un composite SiC/SiC Resistance to Low Energy Impact Damage for a SiC/SiC Composite Vincent Herb 1 , Eric Martin 1 et Jacques Lamon 1 1 : Laboratoire des

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Fully-depleted Strained-Si on Insulator NMOSFETs without Relaxed SiGe Buffers  

E-Print Network [OSTI]

by wafer bonding and Smart-cut processes, is utilized for the first time to make strained-Si on insulator germanium diffusion into the strained Si, formation of low-resistance silicide and altered dopant diffusion SiGe is transferred by wafer bonding and Smart- cut to a BPSG layer, and during annealing the Si

102

Tab. 1. Physical characteristics of Si and 4H-SiC [1]. Property Si 4H-SiC  

E-Print Network [OSTI]

and to support the grid, like Smart PV systems, a battery storage is needed. To cph@et.aau.dk, vcb@et.aau.dk, ret (107 cm/s) 1 2 Thermal conductivity (W/cmK) 1.5 4.9 SiC-based High Efficiency Bidirectional Battery Converter for Smart PV Residential Systems Cam Pham 1 , Valeriu-Ciprian Biris 2 , Remus Teodorescu 3 , Tamas

Teodorescu, Remus

103

An rf-carpet electrospray ion source to provide isobaric mass calibrants for trans-uranium elements  

E-Print Network [OSTI]

For trans-uranium elements, stable atomic isobars do not exist. In order to provide isobaric reference ions for the mass measurement of trans-uranium elements, an electrospray ion source (ESI) was combined with an rf-carpet to collect molecular ions efficiently. The rf-carpet allows for simplification of the pumping system to transport ions from the ESI to a precision mass analyzer. Molecular ions appropriate for isobaric references of trans-uranium elements were extracted from the rf-carpet and analyzed by a multi-reflection time-of-flight mass spectrograph (MRTOF-MS) with a resolving power of $\\rm{R_m} \\gtrsim100,000$.

S. Naimi; S. Nakamura; Y. Ito; H. Mita; K. Okada; A. Ozawa; P. Schury; T. Sonoda; A. Takamine; M. Wada; H. Wollnik

2012-12-16T23:59:59.000Z

104

Bogs are a specialized wetland community with saturated, acidic, peat soils that have low concentra-tions of minerals (e.g., calcium, magnesium) and essential nutrients (phosphorus, nitrogen). They  

E-Print Network [OSTI]

, acidic, peat soils that have low concentra- tions of minerals (e.g., calcium, magnesium) and essential of living Sphagnum mosses growing over a layer of saturated, acidic peat. Sedges, forbs and/or the low), pitcher plant (Sarracenia purpurea) and sundew (Drosera rotundifolia). SOILS: Fibric peat (Histosols

US Army Corps of Engineers

105

quera que le coefficient )'2 de la formule (2) n'a pas la mme significa-tion que ~ de la formule (1). ~,z n'existe que s'il y a chute de tempra-  

E-Print Network [OSTI]

~~~ia- tion. Ces observations prouvent que l'effet Peltier au contact Bi-Cu n'est pas modifi par le champ and available at http://dx.doi.org/10.1051/jphystap:0190100100069101 #12;692 que celles de la rflexion totale

Paris-Sud XI, Universit de

106

SiC/SiC Composite for an Advanced Fusion Power Plant Blanket A. R. Raffray1  

E-Print Network [OSTI]

SiC/SiC Composite for an Advanced Fusion Power Plant Blanket A. R. Raffray1 , L. El-Guebaly2 , D. K, and constraints relating to the SiC/SiC properties are discussed. INTRODUCTION The use of SiC/SiC composite

107

Propagation of misfit dislocations from buffer/Si interface into Si  

DOE Patents [OSTI]

Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

Liliental-Weber, Zuzanna (El Sobrante, CA); Maltez, Rogerio Luis (Porto Alegre, BR); Morkoc, Hadis (Richmond, VA); Xie, Jinqiao (Raleigh, VA)

2011-08-30T23:59:59.000Z

108

The influence of TiSi2 and CoSi2 growth on Si native point defects: The role of the diffusing species  

E-Print Network [OSTI]

from codeposited metal and Si. The as-deposited films had the compositions Ti, TiSi0.8 , TiSi2 undersaturation.3 Nevertheless, the mechanism by which silicide films effect a perturbance in the point defect, causing a va- cancy supersaturation. The formation of CoSi2 from CoSi proceeds via diffusion of metal

Florida, University of

109

The Trans-Africa Pipeline: Building a Sustainable Water Generation and Distribution Network  

E-Print Network [OSTI]

The Trans-Africa Pipeline (TAP), the vision of University of Toronto professor emeritus Rod Tennyson, aims to mitigate poverty, disease, desertification, and conflict in Africas Sahel1 region through the daily provision of roughly one billion litres of fresh water to 20 million people for domestic and agricultural use (Tennyson, n.d; Tennyson et al, n.d). As the effects of climate change become more pronounced,

unknown authors

2011-01-01T23:59:59.000Z

110

Motivation Literature Trans. Networks and Emissions Assessment Indices Link Importance Numerical Examples Summary a Environmental Impact Assessment of  

E-Print Network [OSTI]

Examples Summary a Environmental Impact Assessment of Transportation Networks with Degradable Links Environmental Impact Assessment Indices #12;Motivation Literature Trans. Networks and Emissions Assessment is gratefully acknowledged. Anna Nagurney, Qiang Qiang,, Ladimer S. Nagurney Environmental Impact Assessment

Nagurney, Anna

111

Motivation Literature Trans. Networks and Emissions Assessment Indices Link Importance Numerical Examples Summary Environmental Impact Assessment of  

E-Print Network [OSTI]

Examples Summary Environmental Impact Assessment of Transportation Networks with Degradable Links in an Era S. Nagurney Environmental Impact Assessment Indices #12;Motivation Literature Trans. Networks. This support is gratefully acknowledged. Anna Nagurney, Qiang Qiang, Ladimer S. Nagurney Environmental Impact

Nagurney, Anna

112

A Critical History of Colonization and Amerindian Resistance in Trans-Appalachia 1750-1830: The Proclamation Wars  

E-Print Network [OSTI]

A careful examination of events in Colonial Trans-Appalachia the region geographically encompassed by territories west of the Appalachian Mountain Range and east of the Mississippi River at the time of the French and Indian ...

Arnold, Richard Keith

2010-05-31T23:59:59.000Z

113

Design of a model pipeline for testing of piezoelectric micro power generator for the Trans-Alaska Pipeline System  

E-Print Network [OSTI]

In order to provide a reliable corrosion detection system for the Trans-Alaska Pipeline System (TAPS), a distributed wireless self-powered sensor array is needed to monitor the entire length of the pipeline at all times. ...

Lah, Mike M. (Mike Myoung)

2007-01-01T23:59:59.000Z

114

Vehicle Technologies Office Merit Review 2014: Transportation Energy Transition Modeling and Analysis: the LAVE-Trans Model  

Broader source: Energy.gov [DOE]

Presentation given by Oak Ridge National Laboratory at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about the LAVE-Trans...

115

SiC Power Module  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassiveSubmitted forHighlightsSeminars SeminarsO'LearyGlobalMarketSi Wu d3p754

116

Magnetron-sputter epitaxy of {beta}-FeSi{sub 2}(220)/Si(111) and {beta}-FeSi{sub 2}(431)/Si(001) thin films at elevated temperatures  

SciTech Connect (OSTI)

{beta}-FeSi{sub 2} thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 Degree-Sign C. On Si(111), the growth is consistent with the commonly observed orientation of [001]{beta}-FeSi{sub 2}(220)//[1-10]Si(111) having three variants, in-plane rotated 120 Degree-Sign with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]{beta}-FeSi{sub 2}(431)//[110]Si(001) with four variants, which is hitherto unknown for growing {beta}-FeSi{sub 2}. Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between {beta}-FeSi{sub 2} grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of {beta}-FeSi{sub 2}/Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of {beta}-FeSi{sub 2}(431)/Si(001) is larger than that on the surface of {beta}-FeSi{sub 2}(220)/Si(111).

Liu Hongfei; Tan Chengcheh; Chi Dongzhi [Institute of Materials Research and Engineering (IMRE), A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)

2012-07-15T23:59:59.000Z

117

SiD Letter of Intent  

SciTech Connect (OSTI)

This document presents the current status of the Silicon Detector (SiD) effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R and D needed to provide the technical basis for an optimised SiD.

Aihara, H., (Ed.); Burrows, P., (Ed.); Oreglia, M., (Ed.); Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; /Argonne, HEP; Zhang, Q.; /Argonne, HEP /Beijing, Inst. High Energy Phys.; Srivastava, A.; /Birla Inst. Tech. Sci.; Butler, J.M.; /Boston U.; Goldstein, Joel; Velthuis, J.; /Bristol U.; Radeka, V.; /Brookhaven; Zhu, R.-Y.; /Caltech.; Lutz, P.; /DAPNIA, Saclay; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; /CERN /Cornell U., LNS /Ewha Women's U., Seoul /Fermilab /Gent U. /Darmstadt, GSI /Imperial Coll., London /Barcelona, Inst. Microelectron. /KLTE-ATOMKI /Valencia U., IFIC /Cantabria Inst. of Phys. /Louis Pasteur U., Strasbourg I /Durham U., IPPP /Kansas State U. /Kyungpook Natl. U. /Annecy, LAPP /LLNL, Livermore /Louisiana Tech. U. /Paris U., VI-VII /Paris U., VI-VII /Munich, Max Planck Inst. /MIT, LNS /Chicago, CBC /Moscow State U. /Nanjing U. /Northern Illinois U. /Obninsk State Nucl. Eng. U. /Paris U., VI-VII /Strasbourg, IPHC /Prague, Inst. Phys. /Princeton U. /Purdue U. /Rutherford /SLAC /SUNY, Stony Brook /Barcelona U. /Bonn U. /UC, Davis /UC, Santa Cruz /Chicago U. /Colorado U. /Delhi U. /Hawaii U. /Helsinki U. /Indiana U. /Iowa U. /Massachusetts U., Amherst /Melbourne U. /Michigan U. /Minnesota U. /Mississippi U. /Montenegro U. /New Mexico U. /Notre Dame U. /Oregon U. /Oxford U. /Ramon Llull U., Barcelona /Rochester U. /Santiago de Compostela U., IGFAE /Hefei, CUST /Texas U., Arlington /Texas U., Dallas /Tokyo U. /Washington U., Seattle /Wisconsin U., Madison /Wayne State U. /Yale U. /Yonsei U.

2012-04-11T23:59:59.000Z

118

Stopping power measurements of He ions in Si and SiC by time...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

power measurements of He ions in Si and SiC by time-of-flight spectrometry. Abstract: Electronic energy loss is the fundamental mechanism accountable for the response of...

119

Effect of irradiation on thermal expansion of SiC{sub f}/SiC composites  

SciTech Connect (OSTI)

Linear thermal expansion was measured on five different SiC-fiber-reinforced/SiC-matrix (SiC{sub f}/SiC) composite types in the unirradiated and irradiated conditions. Two matrices were studied in combination with Nicalon CG reinforcement and a 150 nm PyC fiber/matrix interface: chemical vapor infiltrated (CVI) SiC and liquid-phase polymer impregnated precursor (PIP) SiC. Composites of PIP SiC with Tyranno and HPZ fiber reinforcement and a 150 nm PyC interface were also tested, as were PIP SiC composites with Nicalon CG reinforcement and a 150 nm BN fiber/matrix interface. The irradiation was conducted in the Experimental Breeder Reactor-II at a nominal temperature of 1,000 C to doses of either 33 or 43 dpa-SiC. Irradiation caused complete fiber/matrix debonding in the CVI SiC composites due to a dimensional stability mismatch between fiber and matrix, while the PIP SiC composites partially retained their fiber/matrix interface after irradiation. However, the thermal expansion of all the materials tested was found to be primarily dependent on the matrix and independent of either the fiber or the fiber/matrix interface. Further, irradiation had no significant effect on thermal expansion for either the CVI SiC or PIP SiC composites. In general, the thermal expansion of the CVI SiC composites exceeded that of the PIP SiC composites, particularly at elevated temperatures, but the expansion of both matrix types was less than chemical vapor deposited (CVD) {beta}-SiC at all temperatures.

Senor, D.J. [Pacific Northwest Lab., Richland, WA (United States); Trimble, D.J. [Westinghouse Hanford Co., Richland, WA (United States); Woods, J.J. [Lockheed Martin, Schenectady, NY (United States)

1996-06-01T23:59:59.000Z

120

University of California and HRL Laboratories, LLC. All rights reserved. SiGe/Si SUPERLATTICE COOLERS  

E-Print Network [OSTI]

for SiGe/Si superlattice coolers. SiGe is a good thermoelectric material for high temperature and thermally in parallel, similar to conventional thermoelectric devices, and thus achieve large cooling of the barriers to further increase clock speeds and decrease feature sizes. Thermoelectric (TE) refrigeration

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
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We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Selective-area room temperature visible photoluminescence from SiC/Si heterostructures  

E-Print Network [OSTI]

shown8 to produce monocrystalline thin films, while minimizing the high temperature exposure. The Sic mismatch, heteroepitaxial growth of Sic films on Si has been achieved by several groups?-' In addition, SicSi. For example, polycrystalline Sic deposited on Si after it is rendered porous has been utilized9

Steckl, Andrew J.

122

SiGeC Near Infrared Photodetectors  

E-Print Network [OSTI]

A near infrared waveguide photodetector in Si-based ternary Si???x??yGexCy alloy was demonstrated for 0.85~1.06 m wavelength fiber-optic interconnection system applications. Two sets of detectors with active absorption ...

Li, Baojun

123

Analysis of a-Si:H/TCO contact resistance for the Si heterojunction back-contact solar cell  

E-Print Network [OSTI]

Analysis of a-Si:H/TCO contact resistance for the Si heterojunction back-contact solar cell Seung- circuit voltage (Voc) and the conversion efficiency of the Si solar cell. Recently, a-Si:H heterojunction (heterojunction with intrinsic thin layer) cell [1] even with practical-sized Czochralski-grown (CZ) wafer. The a-Si:H

Park, Byungwoo

124

Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions  

E-Print Network [OSTI]

Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions-Si and SiGe-on-insulator were fabricated, combining both the benefits of high-mobility strained-Si and SOI) to oxidized handle wafers. Layer transfer onto insulating handle wafers can be accomplished using grind

125

H. R. 3277: Trans-Alaska Pipeline System Reform Act of 1989. Introduced in the House of Representatives, One Hundredth First Congress, First Session, September 14, 1989  

SciTech Connect (OSTI)

The bill would improve Federal laws relating to the Trans-Alaska Pipeline System in light of the recent Valdez oil spill and its environmental consequences. The bill explains provisions for the Trans-Alaska Pipeline System fund and liability; the Trans-Alaska Pipeline System trust fund; improvement of the pipeline system (establishes a Presidential task force); Alaska oil spill recovery institute; penalties; provisions applicable to Alaska natives; and state laws and programs.

Not Available

1989-01-01T23:59:59.000Z

126

Excited state behavior of trans-styrylnaphthalenes in the subnanosecond time region  

SciTech Connect (OSTI)

Picosecond absorption measurements of the trans isomers of 1- and 2-styrylnaphthalene were carried out in different solvents. In all cases, a bi-exponential decay of the transient spectrum was observed. The two components were assigned to the two lowest excited singlet states of mixed ethylenic and naphthalenic character. Temperature and excitation energy may change the relative contribution of the two states, thus favoring the radiative (naphthalenic) or reactive (ethylenic) relaxation channels. The study of interactions with electron donors showed that both singlets are involved in charge-transfer reactions.

Aloisi, G. G.; Elisei, F.; Mazzucato, U.; Latterini, L.; Rodgers, M. A. J. [Dipartimento di Chimica, Universita di Perugia, I-06123 Perugia (Italy); Center for Photochemical Sciences, Bowling Green State University, Bowling Green, Ohio 43403 (United States)

1996-04-01T23:59:59.000Z

127

Using HyTrans to Study H2 Transition Scenarios | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion |Energy Usage »of EnergyTheTwo New12.'6/0.2 ......UraniumEfficiency |Using HyTrans to

128

Monolithic Ge-on-Si lasers for integrated photonics  

E-Print Network [OSTI]

We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility ...

Liu, Jifeng

129

Manufacturing Metrology for c-Si Module Reliability/Durabiltiy...  

Broader source: Energy.gov (indexed) [DOE]

Manufacturing Metrology for c-Si Module ReliabilityDurabiltiy Manufacturing Metrology for c-Si Module ReliabilityDurabiltiy Presented at the PV Module Reliability Workshop,...

130

Synthesis and Characterization of Structured Si-Carbon Nanocomposite...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Structured Si-Carbon Nanocomposite Anodes and Functional Polymer Binders Synthesis and Characterization of Structured Si-Carbon Nanocomposite Anodes and Functional Polymer Binders...

131

Mo-Si-B Alloy Development  

SciTech Connect (OSTI)

Mo-Si-B silicides consisting of the phases {alpha}-Mo (Mo solid solution), Mo{sub 3}Si, and Mo{sub 5}SiB{sub 2} have melting points on the order of 2000 C and have potential as ultra-high temperature structural materials. Mo-Si-B alloys can be processed such that the {alpha}-Mo is present in the form of isolated particles in a silicide matrix, or as a continuous matrix ''cementing'' individual silicide particles together. The latter microstructure is similar to that of WC-Co hard metals. This paper focuses on the relationship between the topology as well as scale of the microstructure of Mo-Mo{sub 3}Si-Mo{sub 5}SiB{sub 2} alloys, and their creep strength and fracture toughness. For example, the creep strength of Mo-Si-B alloys is improved by reducing the {alpha}-Mo volume fraction and by making the {alpha}-Mo phase discontinuous. The fracture toughness is improved by increasing the {alpha}-Mo volume fraction and by making the {alpha}-Mo phase continuous. Room temperature stress intensity factors as high as 21 MPa m{sup 1/2} were obtained. The room temperature fracture toughness of Mo-Si-B alloys can also be improved by microalloying with Zr. The room temperature ductility of Mo itself can be improved by adding MgAl{sub 2}O{sub 4} spinel particles suggesting yet another way to improve the ductile phase toughening of Mo-Si-B alloys.

Schneibel, J.H.; Kruzie, J.J.; Ritchie, R.O.

2003-04-24T23:59:59.000Z

132

tadiene is equivalentto the si-re face of the trans deuteriosubstrate, and thus we have previouslynotedthat formationof R(+) epoxidefrom octa-  

E-Print Network [OSTI]

an important model compound for studying selective ion transport in biological and synthetic membranes+ and to facilitate the transport of alkali cations across mi- tochondrial membranes with the same ~electivity 02139. Received March 26, I976 Abstract: The membrane-active antibiotic valinomycin has become

Stanley, H. Eugene

133

HIGH-ENERGY NEUTRINO AND GAMMA-RAY TRANSIENTS FROM TRANS-RELATIVISTIC SUPERNOVA SHOCK BREAKOUTS  

SciTech Connect (OSTI)

Trans-relativistic shocks that accompany some supernovae (SNe) produce X-ray burst emissions as they break out in the dense circumstellar medium around the progenitors. This phenomenon is sometimes associated with peculiar low-luminosity gamma-ray bursts (LL GRBs). Here, we investigate the high-energy neutrino and gamma-ray counterparts of such a class of SNe. Just beyond the shock breakout radius, particle acceleration in the collisionless shock starts to operate in the presence of breakout photons. We show that protons may be accelerated to sufficiently high energies and produce high-energy neutrinos and gamma rays via the photomeson interaction. These neutrinos and gamma rays may be detectable from {approx}< 10 Mpc away by IceCube/KM3Net as multi-TeV transients almost simultaneously with the X-ray breakout, and even from {approx}< 100 Mpc away with follow-up observations by the Cherenkov Telescope Array using a wide-field sky monitor like Swift as a trigger. A statistical technique using a stacking approach could also be possible for the detection, with the aid of the SN optical/infrared counterparts. Such multi-messenger observations offer the possibility to probe the transition of trans-relativistic shocks from radiation-mediated to collisionless ones, and would also constrain the mechanisms of particle acceleration and emission in LL GRBs.

Kashiyama, Kazumi; Gao, Shan; Meszaros, Peter [Center for Particle and Gravitational Astrophysics, Department of Astronomy and Astrophysics, Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Murase, Kohta; Horiuchi, Shunsaku, E-mail: kzk15@psu.edu [CCAPP and Department of Physics, Ohio State University, 191 W. Woodruff Avenue, Columbus, OH 43210 (United States)

2013-05-20T23:59:59.000Z

134

MONTE CARLO SIMULATIONS OF NONLINEAR PARTICLE ACCELERATION IN PARALLEL TRANS-RELATIVISTIC SHOCKS  

SciTech Connect (OSTI)

We present results from a Monte Carlo simulation of a parallel collisionless shock undergoing particle acceleration. Our simulation, which contains parameterized scattering and a particular thermal leakage injection model, calculates the feedback between accelerated particles ahead of the shock, which influence the shock precursor and 'smooth' the shock, and thermal particle injection. We show that there is a transition between nonrelativistic shocks, where the acceleration efficiency can be extremely high and the nonlinear compression ratio can be substantially greater than the Rankine-Hugoniot value, and fully relativistic shocks, where diffusive shock acceleration is less efficient and the compression ratio remains at the Rankine-Hugoniot value. This transition occurs in the trans-relativistic regime and, for the particular parameters we use, occurs around a shock Lorentz factor ?{sub 0} = 1.5. We also find that nonlinear shock smoothing dramatically reduces the acceleration efficiency presumed to occur with large-angle scattering in ultra-relativistic shocks. Our ability to seamlessly treat the transition from ultra-relativistic to trans-relativistic to nonrelativistic shocks may be important for evolving relativistic systems, such as gamma-ray bursts and Type Ibc supernovae. We expect a substantial evolution of shock accelerated spectra during this transition from soft early on to much harder when the blast-wave shock becomes nonrelativistic.

Ellison, Donald C.; Warren, Donald C. [Physics Department, North Carolina State University, Box 8202, Raleigh, NC 27695 (United States); Bykov, Andrei M., E-mail: don_ellison@ncsu.edu, E-mail: ambykov@yahoo.com [Ioffe Institute for Physics and Technology, 194021 St. Petersburg (Russian Federation)

2013-10-10T23:59:59.000Z

135

Continuous-wave laser annealing of Si-rich oxide: A microscopic picture of macroscopic Si-SiO{sub 2} phase separation  

SciTech Connect (OSTI)

We report on the first observation of the macroscopic (long-range) Si-SiO{sub 2} phase separation in Si-rich oxide SiO{sub x}(x<2) obtained by continuous-wave laser annealing of free-standing SiO{sub x} films. The effect is analyzed by a unique combination of microscopic methods (Raman, transmission, photoluminescence, and infrared spectroscopy, transmission electron microscopy, electron energy loss spectroscopy, and x-ray photoelectron spectroscopy). Three regions can be distinguished on a SiO{sub x} free-standing film after 488 nm laser annealing at intensities above {approx}10{sup 4} W cm{sup -2}: central spot, ring around the central spot, and pristine film outside the irradiated area. In the pristine SiO{sub x} material, small Si nanocrystals (Si-nc) (diameters of a few nanometer) are surrounded by SiO{sub 2} with an addition of residual suboxides, the Si-nc being produced by annealing at 1100 deg. C in a furnace. The central spot of the laser-annealed area (up to {approx}30 {mu}m wide in these experiments) is practically free of Si excess and mainly consists of amorphous SiO{sub 2}. The ring around the central spot contains large spherical Si-nc (diameters up to {approx}100 nm) embedded in amorphous SiO{sub 2} without the presence of suboxides. Laser-induced temperatures in the structurally modified regions presumably exceed the Si melting temperature. The macroscopic Si-SiO{sub 2} phase separation is connected with extensive diffusion in temperature gradient leading to the Si concentration gradient. The present work demonstrates the advantages of high spatial resolution for analysis in materials research.

Khriachtchev, Leonid; Nikitin, Timur; Raesaenen, Markku; Domanskaya, Alexandra [Laboratory of Physical Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 (Finland); Boninelli, Simona; Iacona, Fabio [MATIS IMM CNR, Via Santa Sofia 64, I-95123 Catania (Italy); Engdahl, Anders [MAX-lab, Lund University, P.O. Box 118, 22100 Lund (Sweden); Juhanoja, Jyrki [Top Analytica, Ruukinkatu 4, FIN-20540 Turku (Finland); Novikov, Sergei [Electron Physics Laboratory, Aalto University, P.O. Box 3000, FIN-02015 HUT (Finland)

2010-12-15T23:59:59.000Z

136

SiN-SiC nanofilm: A nano-functional ceramic with bipolar magnetic semiconducting character  

SciTech Connect (OSTI)

Nowadays, functional ceramics have been largely explored for application in various fields. However, magnetic functional ceramics for spintronics remain little studied. Here, we propose a nano-functional ceramic of sphalerite SiN-SiC nanofilm with intrinsic ferromagnetic order. Based on first principles calculations, the SiN-SiC nanofilm is found to be a ferromagnetic semiconductor with an indirect band gap of 1.71?eV. By mean field theory, the Curie temperature is estimated to be 304?K, close to room temperature. Furthermore, the valence band and conduction band states of the nanofilm exhibit inverse spin-polarization around the Fermi level. Thus, the SiN-SiC nanofilm is a typical bipolar magnetic semiconductor in which completely spin-polarized currents with reversible spin polarization can be created and controlled by applying a gate voltage. Such a nano-functional ceramic provides a possible route for electrical manipulation of carrier's spin orientation.

Zhang, Jiahui; Li, Xingxing [Hefei National Laboratory for Physical Science at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Yang, Jinlong, E-mail: jlyang@ustc.edu.cn [Hefei National Laboratory for Physical Science at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)

2014-04-28T23:59:59.000Z

137

Flex Fuel Optimized SI and HCCI Engine  

Broader source: Energy.gov (indexed) [DOE]

mode engine for a blend of gasoline and E85 for the best fuel economy - Development of a cost effective and reliable dual combustion mode engine - Development of a model-based SI...

138

Solute embrittlement of SiC  

SciTech Connect (OSTI)

The energies and stresses associated with the decohesion of ?-SiC in the presence of mobile Pd and Ag impurities are studied from first principles. Density functional theory calculations are parameterized with a generalized cohesive zone model and are analyzed within a thermodynamic framework that accounts for realistic boundary conditions in the presence of mobile impurities. We find that Pd impurities will embrittle SiC when Pd is in equilibrium with metallic Pd precipitates. Our thermodynamic analysis predicts that Pd embrittles SiC by substantially reducing the maximum stress of decohesion as a result of a phase transition between decohering planes involving an influx of Pd atoms. The methods presented in this work can be applied to study the thermodynamics of decohesion of SiC in other aggressive environments containing oxygen and water, for example, and yield environment dependent cohesive zone models for use in continuum approaches to study crack propagation and fracture.

Enrique, Ral A., E-mail: enriquer@umich.edu [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48103 (United States); Van der Ven, Anton, E-mail: avdv@engineering.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2014-09-21T23:59:59.000Z

139

MA 16020 SI slide.pptx  

E-Print Network [OSTI]

SI Study Sessions for MA 16020 -? Spring 2015. Mondays. 4:30 5:20 KRCH 464. Tuesdays. 5:30 6:20 RHPH 162. Thursdays. 4:30 5:20 ARMS 1103.

OwenDavis

2015-01-12T23:59:59.000Z

140

Microstructure, strength and toughness of Si3N4-SiC whisker composites  

SciTech Connect (OSTI)

Si3N4-SiC whisker composites were fabricated using several routes (i.e., pressure filtration or CIP) followed by HP or HIP. The fracture strength ranges from 650 MPa to 750 MPa on account of the whiskers orientation. Compared to the Si3N4 matrix, the toughness is increased. A strong R-curve effect can be obtained, suggesting that, to be efficient, the whisker diameter must exceed a critical size. 13 refs.

Champion, E.; Goursat, P.; Besson, J.L.; Madigou, V.; Monthioux, M.; Lespade, P.

1992-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Size dependent optical properties of Si quantum dots in Si-rich nitride/Si{sub 3}N{sub 4} superlattice synthesized by magnetron sputtering  

SciTech Connect (OSTI)

A spectroscopic ellipsometry compatible approach is reported for the optical study of Si quantum dots (QDs) in Si-rich nitride/silicon nitride (SRN/Si{sub 3}N{sub 4}) superlattice, which based on Tauc-Lorentz model and Bruggeman effective medium approximation. It is shown that the optical constants and dielectric functions of Si QDs are strongly size dependent. The suppressed imaginary dielectric function of Si QDs exhibits a single broad peak analogous to amorphous Si, which centered between the transition energies E{sub 1} and E{sub 2} of bulk crystalline Si and blue shifted toward E{sub 2} as the QD size reduced. A bandgap expansion observed by the TL model when the size of Si QD reduced is in good agreement with the PL measurement. The bandgap expansion with the reduction of Si QD size is well supported by the first-principles calculations based on quantum confinement.

So, Yong-Heng; Huang, Shujuan; Conibeer, Gavin; Green, Martin A. [ARC Photovoltaics Centre of Excellence, University of New South Wales, Sydney, New South Wales 2052 (Australia); Gentle, Angus [Physics and Advanced Materials, University of Technology Sydney, P. O. Box 123, Broadway, New South Wales 2007 (Australia)

2011-03-15T23:59:59.000Z

142

Characterization of SiGe/Si multi-quantum wells for infrared sensing  

SciTech Connect (OSTI)

SiGe epitaxial layers are integrated as an active part in thermal detectors. To improve their performance, deeper understanding of design parameters, such as thickness, well periodicity, quality, and strain amount, of the layers/interfaces is required. Oxygen (22500??10{sup ?9}?Torr) was exposed prior or during epitaxy of SiGe/Si multilayers. In this range, samples with 10?nTorr oxygen were processed to investigate layer quality and noise measurements. Temperature coefficient of resistance was also measured to evaluate the thermal response. These results demonstrate sensitivity of SiGe-based devices to size and location of defects in the structure.

Moeen, M.; Salemi, A.; stling, M.; Radamson, H. H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640 Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)] [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

2013-12-16T23:59:59.000Z

143

ZnO/porous-Si and TiO{sub 2}/porous-Si nanocomposite nanopillars  

SciTech Connect (OSTI)

Porous Si nanopillar arrays are used as templates for atomic layer deposition of ZnO and TiO{sub 2}, and thus, ZnO/porous-Si and TiO{sub 2}/porous-Si nanocomposite nanopillars are fabricated. The diffusion of the precursor molecules into the inside of the porous structure occurs via Knudsen diffusion and is strongly limited by the small pore size. The luminescence of the ZnO/porous-Si nanocomposite nanopillars is also investigated, and the optical emission can be changed and even quenched after a strong plasma treatment. Such nanocomposite nanopillars are interesting for photocatalysis and sensors.

Wang, Dong, E-mail: dong.wang@tu-ilmenau.de; Yan, Yong; Schaaf, Peter [Chair Materials for Electronics, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies MacroNano, TU Ilmenau, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany); Sharp, Thomas [Oxford Instruments Plasma Technology Ltd., Yatton, Bristol BS49 4AP (United Kingdom); Schnherr, Sven; Ronning, Carsten [Institute for Solid State Physics, Friedrich Schiller University Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Ji, Ran [SUSS MicroTec Lithography GmbH, Schleissheimer Str. 90, 85748 Garching (Germany)

2015-01-01T23:59:59.000Z

144

EPR study of the cis-trans isomerization process in polyacetylene films P. Bernier (*), C. Linaya (**), M. Rolland (*) and M. Aldissi (**)  

E-Print Network [OSTI]

L-295 EPR study of the cis-trans isomerization process in polyacetylene films P. Bernier (*), C EPR we have studied the isomerization process converting cis-(CH)x films to the trans form upon-prepared pure cis-(CH)x (at - 78 °C) as evidenced by the absence of any EPR signal [3]. The presence of unpaired

Paris-Sud XI, Université de

145

Synthesis of 4-substituted-trans-1, 2-diaminocyclohexyl polyaminocarboxylate metal chelating agents for the preparation of stable radiometal antibody immunoconjugates for therapy and spect and pet imaging  

DOE Patents [OSTI]

Cyclo agents useful in forming antibody-metal conjugates useful for diagnostic and therapeutic purposes. New compounds and processes of forming these compounds are disclosed including 4-haloacetamido-trans-1,2-diaminocyclohexyl polyaminocarboxylate and 4-isothiocyanato-trans-1,2-diamino cyclohexane-N,N,N',N'-tetra acetic acid.

Mease, Ronnie C. (Coram, NY); Mausner, Leonard F. (Stony Brook, NY); Srivastava, Suresh C. (Setauket, NY)

1994-01-01T23:59:59.000Z

146

Synthesis of 4-substituted-trans-1, 2-diaminocyclohexyl polyaminocarboxylate metal chelating agents for the preparation of stable radiometal antibody immunoconjugates for therapy and SPECT and PET imaging  

DOE Patents [OSTI]

Cyclo agents are described which are useful in forming antibody-metal conjugates which are used for diagnostic and therapeutic purposes. New compounds and processes of forming these compounds are disclosed including 4-haloacetamido-trans-1,2diaminocyclohexyl polyaminocarboxylate and 4-isothiocyanato-trans-1,2diamino cyclohexane-N,N,N',N'-tetra acetic acid. No Drawings

Mease, R.C.; Mausner, L.F.; Srivastava, S.C.

1994-03-08T23:59:59.000Z

147

Electrospun a-Si using Liquid Silane/Polymer Inks  

SciTech Connect (OSTI)

Amorphous silicon nanowires (a-SiNWs) were prepared by electrospinning cyclohexasilane (Si{sub 6}H{sub 12}) admixed with polymethylmethacrylate (PMMA) in toluene. Raman spectroscopy characterization of these wires (d {approx} 50-2000 nm) shows 350 C treatment yields a-SiNWs. Porous a-SiNWs are obtained using a volatile polymer.

Doug Schulz

2010-12-09T23:59:59.000Z

148

Biotransformation of trans-1,1,1,3-tetrafluoropropene (HFO-1234ze)  

SciTech Connect (OSTI)

trans-1,1,1,3-Tetrafluoropropene (HFO-1234ze) is a non-ozone-depleting fluorocarbon replacement with a low global warming potential and is developed as foam blowing agent. The biotransformation of HFO-1234ze was investigated after inhalation exposure. Male Sprague-Dawley rats were exposed to air containing 2000; 10,000; or 50,000 ppm (n = 5/concentration) HFO-1234ze. Male B6C3F1 mice were only exposed to 50,000 ppm HFO-1234ze. All inhalation exposures were conducted for 6 h in a dynamic exposure chamber. After the end of the exposures, animals were individually housed in metabolic cages and urines were collected at 6 or 12 h intervals for 48 h. For metabolite identification, urine samples were analyzed by {sup 1}H-coupled and {sup 1}H-decoupled {sup 19}F-NMR and by LC/MS-MS or GC/MS. Metabolites were identified by {sup 19}F-NMR chemical shifts, signal multiplicity, {sup 1}H-{sup 19}F coupling constants and by comparison with synthetic reference compounds. In urine samples of rats exposed to 50,000 ppm HFO-1234ze, the predominant metabolite was S-(3,3,3-trifluoro-trans-propenyl)-mercaptolactic acid and accounted for 66% of all integrated {sup 19}F-NMR signals in urines. No {sup 19}F-NMR signals were found in spectra of rat urine samples collected after inhalation exposure to 2000 or 10,000 ppm HFO-1234ze likely due to insufficient sensitivity. S-(3,3,3-Trifluoro-trans-propenyl)-L-cysteine, N-acetyl-S-(3,3,3-trifluoro-trans-propenyl)-L-cysteine and 3,3,3-trifluoropropionic acid were also present as metabolites in urine samples of rats and mice. A presumed amino acid conjugate of 3,3,3-trifluoropropionic acid was the major metabolite of HFO-1234ze in urine samples of mice exposed to 50,000 ppm and related to 18% of total integrated {sup 19}F-NMR signals. Quantification of three metabolites in urines of rats and mice was performed, using LC/MS-MS and GC/MS. The quantified amounts of the metabolites excreted with urine in both mice and rats, suggest only a low extent (< 1% of dose received) of biotransformation of HFO-1234ze and 95% of all metabolites were excreted within 18 h after the end of the exposures (t{sub 1/2} app. 6 h). The obtained results suggest that HFO-1234ze is likely subjected to an addition-elimination reaction with glutathione and to a CYP 450 mediated epoxidation at low rates.

Schuster, Paul [Institut fuer Toxikologie, Universitaet Wuerzburg, Versbacher Str. 9, 97078 Wuerzburg (Germany); Bertermann, Ruediger [Institut fuer Anorganische Chemie, Universitaet Wuerzburg, Am Hubland, 97074 Wuerzburg (Germany); Rusch, George M. [Honeywell, P.O. Box 1057, Morristown, NJ 07962-1057 (United States); Dekant, Wolfgang [Institut fuer Toxikologie, Universitaet Wuerzburg, Versbacher Str. 9, 97078 Wuerzburg (Germany)], E-mail: dekant@toxi.uni-wuerzburg.de

2009-09-15T23:59:59.000Z

149

IEEE TRANS. AUTOM. CONTROL, SPECIAL ISSUE ON WIRELESS SENSOR AND ACTUATOR NETWORKS 1 Energy Optimized Topologies for Distributed  

E-Print Network [OSTI]

. We formulate the combinatorial optimization problem of selecting such a minimal energy tree that yield energy efficient bidirectional span- ning trees and establish associated bounds on the optimalIEEE TRANS. AUTOM. CONTROL, SPECIAL ISSUE ON WIRELESS SENSOR AND ACTUATOR NETWORKS 1 Energy

150

The introduction of electrochemical detection of trans-mitters1 and the development of the carbon fiber micro-  

E-Print Network [OSTI]

. During amperometric recordings, a carbon fiber electrode held at a positive potential is placed againstThe introduction of electrochemical detection of trans- mitters1 and the development of the carbon fiber micro- electrode2 have provided a means to directly measure vesicular release of neurotransmitters

Cai, Long

151

Trans-Hudson orogen and Williston basin in Montana and North Dakota: New COCORP deep-profiling results  

E-Print Network [OSTI]

Trans-Hudson orogen and Williston basin in Montana and North Dakota: New COCORP deep) There is no evidence for a precursor rift basin beneath the axis of the Williston basin_ With the exception of small-scale structures (e.g., Nesson and Cedar Creek anticlines), the basement surface beneath the Williston basin

Jones, Alan G.

152

C.D. Tran, J. Near Infrared Spectrosc. 8, 89102 (2000) 89 NIR Publications 2000, ISSN 0967-0335  

E-Print Network [OSTI]

C.D. Tran, J. Near Infrared Spectrosc. 8, 89­102 (2000) 89 © NIR Publications 2000, ISSN 0967-0335 Visualising chemical composition and reaction kinetics by the near infrared multispectral imaging technique and near infrared has been developed. In this instrument, an acousto-optic tunable filter (AOTF) is used

Reid, Scott A.

153

To appear in IEEE Trans. on VLSI Systems, 2008 1 Abstract -This paper presents an energy-efficient packet  

E-Print Network [OSTI]

must resort to more energy-efficient architectures as they attempt to add more ports to the serverTo appear in IEEE Trans. on VLSI Systems, 2008 1 Abstract - This paper presents an energy as to minimize the total system energy dissipation while attaining performance goals. A key feature

Pedram, Massoud

154

Abstract The Tat protein-export system serves to trans-locate folded proteins, often containing redox cofactors,  

E-Print Network [OSTI]

- location by the Sec system proceeds by a `threading' mechanism in which the essentially unfolded substrate-bound respiratory complexes by the Tat protein-transport system Received: 27 February 2002 / Revised: 16 April 2002Abstract The Tat protein-export system serves to trans- locate folded proteins, often containing

Palmer, Tracy

155

Residual Stress in CVD-grown 3C-SiC Films on Si Substrates Alex A. Volinsky1  

E-Print Network [OSTI]

on 50 mm (100) and (111) Si substrates in a hot-wall CVD reactor. The film tensile residual stress was non-uniform, having a linear profile along the growth direction. This presented a challenge of using to deposit SiC on Si wafers due to their high quality and low cost, in comparison to SiC substrates. However

Volinsky, Alex A.

156

Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas  

E-Print Network [OSTI]

Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas- sions (CD).3 An example of this process is fluorocarbon plasma etching of trenches and vias in SiO2 and stopping on a crystalline Si layer. The fluorocarbon radicals produced in the plasma deposit a polymer

Kushner, Mark

157

Film Si Solar Cells with Nano Si: Cooperative Research and Development Final Report, CRADA Number CRD-09-00356  

SciTech Connect (OSTI)

Nevada Nanotechnology Center and Si group at NREL will work together to develop a-Si based solar cells with nano-Si technique. We will explore the existing a-Si based film solar cell technology at NREL and nano scale Si technology at Nevada Nanotechnology Center. By exchanging information, we will come; up with some new cell structures using nano-Si. We expect the new a-Si based cells will have optical enhancement or better electronic or optical properties of absorber layer to improve solar cell performance.

Wang, Q.

2011-05-01T23:59:59.000Z

158

Geochemical Evidence for Slab Melting in theTrans-MexicanVolcanic Belt  

E-Print Network [OSTI]

and heavy rare earth concentrations and Nb/Ta ratios with increasing SiO2 contents in theVBZ rocks is best OF EARTH AND PLANETARY SCIENCES, HARVARD UNIVERSITY, CAMBRIDGE, MA 02138, USA 3 LAMONT^DOHERTY EARTH OBSERVATORY AND DEPARTMENT OF EARTH AND ENVIRONMENTAL SCIENCES, COLUMBIA UNIVERSITY, 61 RT. 9W, PALISADES, NY

Langmuir, Charles H.

159

MAGNETOHYDRODYNAMIC AND THERMAL ISSUES OF THE SiCf0SiC FLOW CHANNEL INSERT  

E-Print Network [OSTI]

and heat transfer in the po- loidal channel of the blanket, were studied with numer- ical simulations using, and the effect of SiCf /SiC anisotropy. KEYWORDS: liquid metal blanket, magnetohydrodynamics, heat transfer I modifications, one with no pres- sure equalization openings and one with a pressure equalization slot, have been

Abdou, Mohamed

160

Si6H12/Polymer Inks for Electrospinning a-Si Nanowire Lithium Ion Battery Anodes  

SciTech Connect (OSTI)

Amorphous silicon nanowires 'a-SiNWs' have been prepared by electrospinning a liquid silane-based precursor. Cyclohexasilane 'Si6H12' was admixed with poly-methyl methacrylate (PMMA) in toluene giving an ink that was electrospun into the Si6H12/PPMA wires with diameters of 50-2000 nm. Raman spectroscopy revealed that thermal treatment at 350 C transforms this deposit into a-SiNWs. These materials were coated with a thin carbon layer and then tested as half-cells where a reasonable plateau in electrochemical cycling was observed after an initial capacity fade. Additionally, porous a-SiNWs were realized when the thermally decomposable binder polypropylene carbonate/polycyclohexene carbonate was used as the polymer carrier.

Schulz, Douglas L.; Hoey, Justin; Smith, Jeremiah; Elangovan, Arumugasamy; Wu, Xiangfa; Akhatov, Iskander; Payne, Scott; Moore, Jayma; Boudjouk, Philip; Pederson, Larry; Xiao, Jie; Zhang, Jiguang

2010-08-04T23:59:59.000Z

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Stepwise redefinition of the SI base units  

E-Print Network [OSTI]

The four SI base units are proposed to be redefined in two stages: first, the kilogram, mole and ampere should be defined, and then the kelvin. To realize the redefinition of a base unit of the SI in terms of fundamental physical constant (FPC), a principle of coincidence of their physical dimensions is put forward. Direct applying this principle will lead to the changing of the sets of base and derived units in the new SI. If we want to preserve the continuity of the division between base and derived units in the new and the current SI, the principle is to be generalized with the time dimension factor be included. The status of the mole as the base unit of measurement is considered in the current and new SI. It is proposed to redefine the kilogram using a fixed value of the Avogadro constant and then to redefine the kelvin, after the measurement accuracy of the Boltzmann constant has been increased and agreed with the values of other constants of molecular physics.

Issaev, L K; Khruschov, V V

2012-01-01T23:59:59.000Z

162

Ag on Si(111) from basic science to application  

SciTech Connect (OSTI)

In our work we revisit Ag and Au adsorbates on Si(111)-7x7, as well as experiment with a ternary system of Pentacene, Ag and Si(111). Of particular interest to us is the Si(111)-({radical}3x{radical}3)R30{degree}Ag (Ag-Si-{radical}3 hereafter). In this thesis I systematically e plore effects of Ag deposition on the Ag-Si-{radical}3 at different temperatures, film thicknesses and deposition fluxes. The generated insight of the Ag system on the Si(111) is then applied to generate novel methods of nanostructuring and nanowire growth. I then extend our expertise to the Au system on the Ag-Si(111) to gain insight into Au-Si eutectic silicide formation. Finally we explore behavior and growth modes of an organic molecule on the Ag-Si interface.

Belianinov, Aleksey

2012-04-04T23:59:59.000Z

163

Comparison of the vacuum-ultraviolet radiation response of HfO{sub 2}/SiO{sub 2}/Si dielectric stacks with SiO{sub 2}/Si  

SciTech Connect (OSTI)

Vacuum ultraviolet (vuv) emitted during plasma processing degrades dielectrics by generating electron-hole pairs. VUV-induced charging of SiO{sub 2}/p-Si and HfO{sub 2}/SiO{sub 2}/p-Si dielectric stacks are compared. For SiO{sub 2}/p-Si, charging is observed for photon energies >15 eV by ionization of dielectric atoms from photoinjected electrons. In HfO{sub 2}/SiO{sub 2}/p-Si, charging is observed for photon >10 eV and is due to ionization by photoinjected electrons and by H{sup +} trapping in the HfO{sub 2}/SiO{sub 2} bulk. Hydrogen appears during annealing at the Si-SiO{sub 2} interface forming Si-H, which, during irradiation, is depassivated by photoinjected electrons. The authors conclude that dielectric charging in thin oxides (<10 nm) occurs more easily in HfO{sub 2}/SiO{sub 2} than in SiO{sub 2}.

Upadhyaya, G. S.; Shohet, J. L. [Plasma Processing and Technology Laboratory, and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

2007-02-12T23:59:59.000Z

164

Direct growth of graphene on Si(111)  

SciTech Connect (OSTI)

Due to the need of integrated circuit in the current silicon technology, the formation of graphene on Si wafer is highly desirable, but is still a challenge for the scientific community. In this context, we report the direct growth of graphene on Si(111) wafer under appropriate conditions using an electron beam evaporator. The structural quality of the material is investigated in detail by reflection high energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, high resolution scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. Our experimental results confirm that the quality of graphene is strongly dependent on the growth time during carbon atoms deposition.

Thanh Trung, Pham, E-mail: phamtha@fundp.ac.be; Joucken, Frdric; Colomer, Jean-Franois; Robert, Sporken [Research Center in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), 61 Rue de Bruxelles, 5000 Namur (Belgium); Campos-Delgado, Jessica; Raskin, Jean-Pierre [Electrical Engineering (ELEN), Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Universit catholique de Louvain UCL, 3 place du Levant, Louvain-la-Neuve (Belgium); Hackens, Benot; Santos, Cristiane N. [Nanoscopic physics (NAPS), Institute of Condensed Matter and Nanosciences (IMCN), Universit catholique de Louvain UCL, 2 chemin du Cyclotron, Louvain-la-Neuve (Belgium)

2014-06-14T23:59:59.000Z

165

Development of Readout Interconnections for the Si-W Calorimeter of SiD  

SciTech Connect (OSTI)

The SiD collaboration is developing a Si-W sampling electromagnetic calorimeter, with anticipated application for the International Linear Collider. Assembling the modules for such a detector will involve special bonding technologies for the interconnections, especially for attaching a silicon detector wafer to a flex cable readout bus. We review the interconnect technologies involved, including oxidation removal processes, pad surface preparation, solder ball selection and placement, and bond quality assurance. Our results show that solder ball bonding is a promising technique for the Si-W ECAL, and unresolved issues are being addressed.

Woods, M.; Fields, R.G.; Holbrook, B.; Lander, R.L.; Moskaleva, A.; Neher, C.; Pasner, J.; Tripathi, M.; /UC, Davis; Brau, J.E.; Frey, R.E.; Strom, D.; /Oregon U.; Breidenbach, M.; Freytag, D.; Haller, G.; Herbst, R.; Nelson, T.; /SLAC; Schier, S.; Schumm, B.; /UC, Santa Cruz

2012-09-14T23:59:59.000Z

166

Development of Readout Interconnections for the Si-W Calorimeter of SiD  

E-Print Network [OSTI]

The SiD collaboration is developing a Si-W sampling electromagnetic calorimeter, with anticipated application for the International Linear Collider. Assembling the modules for such a detector will involve special bonding technologies for the interconnections, especially for attaching a silicon detector wafer to a flex cable readout bus. We review the interconnect technologies involved, including oxidation removal processes, pad surface preparation, solder ball selection and placement, and bond quality assurance. Our results show that solder ball bonding is a promising technique for the Si-W ECAL, and unresolved issues are being addressed.

M. Woods; R. G. Fields; B. Holbrook; R. L. Lander; A. Moskaleva; C. Neher; J. Pasner; M. Tripathi; J. E. Brau; R. E. Frey; D. Strom; M. Breidenbach; D. Freytag; G. Haller; R. Herbst; T. Nelson; S. Schier; B. Schumm

2011-11-21T23:59:59.000Z

167

UTICA 4, NEW YORK COFIPOR~TION  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCTTO: FILEWAWINQTON, 0. C.JournalDROf

168

Giant monopole resonance strength in Si-28  

E-Print Network [OSTI]

The giant resonance region in Si-28 was studied with inelastic scattering of 240 MeV alpha particles at small angles including 0 degrees. The giant resonance peak extended from E-x=12 MeV to 35 MeV and E0 strength corresponding to 54 +/- 6...

Youngblood, David H.; Clark, HL; Lui, YW.

1998-01-01T23:59:59.000Z

169

Electronic Origin For The Phase Transition From Amorphous LixSi...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

lithiation, silicon transforms to amorphous LixSi (a-LixSi) via electrochemical driven solid state amorphization. With increasing lithium concentration, a-LixSi transforms to...

170

Ge-on-Si laser operating at room temperature  

E-Print Network [OSTI]

Monolithic lasers on Si are ideal for high-volume and large-scale electronicphotonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide ...

Liu, Jifeng

171

acopladas entre si: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and analysis of lateral SiC N-emitter SiGe P-base Schottky metal-collector (NPM) HBT on SOI Engineering Websites Summary: on SOI M. Jagadesh Kumar *, C. Linga Reddy...

172

asociat si rezultatele: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and analysis of lateral SiC N-emitter SiGe P-base Schottky metal-collector (NPM) HBT on SOI Engineering Websites Summary: on SOI M. Jagadesh Kumar *, C. Linga Reddy...

173

ambiant si impactul: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and analysis of lateral SiC N-emitter SiGe P-base Schottky metal-collector (NPM) HBT on SOI Engineering Websites Summary: on SOI M. Jagadesh Kumar *, C. Linga Reddy...

174

al si application: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

that could boost Si-based wireless technology 99 High Performance Polycrystalline SiGe Thin Film Transistors Using Al2O3 Gate Insulator Materials Science Websites Summary:...

175

Electronic Origin For The Phase Transition From Amorphous LixSi To Crystalline Li15Si4  

SciTech Connect (OSTI)

Silicon has been widely explored as an anode material for lithium ion battery. Upon lithiation, silicon transforms to amorphous LixSi (a-LixSi) via electrochemical driven solid state amorphization. With increasing lithium concentration, a-LixSi transforms to crystalline Li15Si4 (c-Li15Si4). The mechanism of this crystallization process is not known. In this paper, we report the fundamental characteristics of the phase transition of a-LixSi to c-Li15Si4 using in-situ scanning transmission electron microscopy (STEM), electron energy loss spectroscopy (EELS), and density function theory (DFT) calculation. We find that when the lithium concentration in a-LixSi reaches a critical value of x = 3.75, the a-Li3.75Si spontaneously and congruently transforms to c-Li15Si4 by a process that is solely controlled by the lithium concentration in the a-LixSi, involving neither large scale atomic migration nor phase separation. DFT calculations indicate that c-Li15Si4 formation is favored over other possible crystalline phases due to the similarity in electronic structure with a-Li3.75Si.

Gu, Meng; Wang, Zhiguo; Connell, Justin G.; Perea, Daniel E.; Lauhon, Lincoln J.; Gao, Fei; Wang, Chong M.

2013-06-24T23:59:59.000Z

176

Fiber/Matrix Interfacial Thermal Conductance Effect on the Thermal Conductivity of SiC/SiC Composites  

SciTech Connect (OSTI)

SiC/SiC composites used in fusion reactor applications are subjected to high heat fluxes and require knowledge and tailoring of their in-service thermal conductivity. Accurately predicting the thermal conductivity of SiC/SiC composites as a function of temperature will guide the design of these materials for their intended use, which will eventually include the effects of 14-MeV neutron irradiations. This paper applies an Eshelby-Mori-Tanaka approach (EMTA) to compute the thermal conductivity of unirradiated SiC/SiC composites. The homogenization procedure includes three steps. In the first step EMTA computes the homogenized thermal conductivity of the unidirectional (UD) SiC fiber embraced by its coating layer. The second step computes the thermal conductivity of the UD composite formed by the equivalent SiC fibers embedded in a SiC matrix, and finally the thermal conductivity of the as-formed SiC/SiC composite is obtained by averaging the solution for the UD composite over all possible fiber orientations using the second-order fiber orientation tensor. The EMTA predictions for the transverse thermal conductivity of several types of SiC/SiC composites with different fiber types and interfaces are compared to the predicted and experimental results by Youngblood et al.

Nguyen, Ba Nghiep; Henager, Charles H.

2013-04-20T23:59:59.000Z

177

Trans-Planckian redshifts and the substance of the space-time river  

E-Print Network [OSTI]

Trans-Planckian redshifts in cosmology and outside black holes may provide windows on a hypothetical short distance cutoff on the fundamental degrees of freedom. In cosmology, such a cutoff seems to require a growing Hilbert space, but for black holes, Unruh's sonic analogy has given rise to both field theoretic and lattice models demonstrating how such a cutoff in a fixed Hilbert space might be compatible with a low energy effective quantum field theory of the Hawking effect. In the lattice case, the outgoing modes arise via a Bloch oscillation from ingoing modes. A short distance cutoff on degrees of freedom is incompatible with local Lorentz invariance, but may nevertheless be compatible with general covariance if the preferred frame is defined non-locally by the cosmological background. Pursuing these ideas in a different direction, condensed matter analogs may eventually allow for laboratory observations of the Hawking effect. This paper introduces and gives a fairly complete but brief review of the work that has been done in these areas, and tries to point the way to some future directions.

Ted Jacobson

2000-02-16T23:59:59.000Z

178

Foulger, G.R., Microearthquake Analysis Techniques For Geothermal Applications, EOS Trans. AGU, Fall Meet. Suppl., Abstract S32B-02 (invited), 2009.  

E-Print Network [OSTI]

urgency to develop renewable energy resources, including geothermal power, and in particular EnhancedFoulger, G.R., Microearthquake Analysis Techniques For Geothermal Applications, EOS Trans. AGU And Induced Microearthquakes Microearthquake Analysis Techniques For Geothermal Applications The increased

Foulger, G. R.

179

TransCom model simulations of CH? and related species: linking transport, surface flux and chemical loss with CH? variability in the troposphere and lower stratosphere  

E-Print Network [OSTI]

A chemistry-transport model (CTM) intercomparison experiment (TransCom-CH?) has been designed to investigate the roles of surface emissions, transport and chemical loss in simulating the global methane distribution. Model ...

Patra, P. K.

180

Estimate the fraction of the total transported energy (in the form of gasoline) in the Trans-Alaska Pipeline that is consumed in pumping.  

E-Print Network [OSTI]

Estimate the fraction of the total transported energy (in the form of gasoline) in the Trans m). So we can toss this out. Now estimate the energy content of gasoline: Many of you tried figuring

Nimmo, Francis

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

The dynamical evolution of dwarf planet (136108) Haumea's collisional family: General properties and implications for the trans-Neptunian belt  

E-Print Network [OSTI]

Recently, the first collisional family was identified in the trans-Neptunian belt. The family consists of Haumea and at least ten other ~100km-sized trans-Neptunian objects (TNOs) located in the region a = 42 - 44.5 AU. In this work, we model the long-term orbital evolution of an ensemble of fragments representing hypothetical post-collision distributions at the time of the family's birth. We consider three distinct scenarios, in which the kinetic energy of dispersed particles were varied such that their mean ejection velocities (veje) were of order 200 m/s, 300 m/s and 400 m/s, respectively. Each simulation considered resulted in collisional families that reproduced that currently observed. The results suggest that 60-75% of the fragments created in the collision will remain in the trans-Neptunian belt, even after 4 Gyr of dynamical evolution. The surviving particles were typically concentrated in wide regions of orbital element space centred on the initial impact location, with their orbits spread across a ...

Lykawka, Patryk Sofia; Mukai, Tadashi; Nakamura, Akiko M

2011-01-01T23:59:59.000Z

182

Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*  

E-Print Network [OSTI]

Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga* , Mike Morsea , Mario J. Panicciaa , Moshe, Charlottesville, VA 22904, USA Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes. Research on the Ge/Si photodiodes, one of the fundamental components needed for building integrated silicon

Bowers, John

183

FRET-Labeled siRNA Probes for Tracking Assembly and Disassembly of siRNA-Nanocomplexes  

E-Print Network [OSTI]

The assembly, stability, and timely disassembly of short interfering RNA (siRNA) nanocomplexes have the potential to affect the efficiency of siRNA delivery and gene silencing. As such, the design of new probes that can ...

Alabi, Christopher Akinleye

184

Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures  

SciTech Connect (OSTI)

Transmission electron microscopy and the cathodoluminescence method are used to study the transition region in 3C-SiC/6H-SiC heterostructures. It is shown that this region is, as a rule, constituted by alternating 3C-SiC and 6H-SiC layers with the possible inclusion of other silicon carbide polytypes. An assumption is made that this structure of the transition region can be explained in terms of the model of spinodal decomposition.

Lebedev, A. A.; Zamorianskaya, M. V.; Davydov, S. Yu.; Kirilenko, D. A.; Lebedev, S. P., E-mail: shura.lebe@mail.ioffe.ru; Sorokin, L. M.; Shustov, D. B.; Scheglov, M. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-11-15T23:59:59.000Z

185

FIRING STABILITY OF SiNy / SiNx SURFACE PASSIVATION STACKS FOR CRYSTALLINE SILICON SOLAR CELLS  

E-Print Network [OSTI]

to passivate the phosphorous-diffused emitter at the front. The passivation of these SiNx films deposited

186

Method for enhancing growth of SiO.sub.2 in Si by the implantation of germanium  

DOE Patents [OSTI]

A method for enhancing the conversion of Si to SiO.sub.2 in a directional fashion wherein steam or wet oxidation of Si is enhanced by the prior implantation of Ge into the Si. The unique advantages of the Ge impurity include the directional enhancement of oxidation and the reduction in thermal budget, while at the same time, Ge is an electrically inactive impurity.

Holland, Orin W. (Oak Ridge, TN); Fathy, Dariush (Knoxville, TN); White, Clark W. (Oak Ridge, TN)

1990-04-24T23:59:59.000Z

187

IEICE TRANS. COMMUN., VOL.E91B, NO.5 MAY 2008 INVITED PAPER Special Section on Communication Quality  

E-Print Network [OSTI]

, such as the level of distortion of voice signals, the effects of other factors like loudness and sidetone, can also) E-mail: r95921037@ntu.edu.tw b) E-mail: ktchen@iis.sinica.edu.tw c) E-mail: phuang@cc.ee.ntu.edu.tw d) E-mail: lei@cc.ee.ntu.edu.tw This work was supported in part by Taiwan Informa- tion Security

Huang, Polly

188

Comparison of the Photodesorption Activities of cis-Butene, trans-Butene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed New SubstationCleanCommunity Involvement andMISR, and MODISPd/CeO/Ta/Si Modeland

189

Si-based RF MEMS components.  

SciTech Connect (OSTI)

Radio frequency microelectromechanical systems (RF MEMS) are an enabling technology for next-generation communications and radar systems in both military and commercial sectors. RF MEMS-based reconfigurable circuits outperform solid-state circuits in terms of insertion loss, linearity, and static power consumption and are advantageous in applications where high signal power and nanosecond switching speeds are not required. We have demonstrated a number of RF MEMS switches on high-resistivity silicon (high-R Si) that were fabricated by leveraging the volume manufacturing processes available in the Microelectronics Development Laboratory (MDL), a Class-1, radiation-hardened CMOS manufacturing facility. We describe novel tungsten and aluminum-based processes, and present results of switches developed in each of these processes. Series and shunt ohmic switches and shunt capacitive switches were successfully demonstrated. The implications of fabricating on high-R Si and suggested future directions for developing low-loss RF MEMS-based circuits are also discussed.

Stevens, James E.; Nordquist, Christopher Daniel; Baker, Michael Sean; Fleming, James Grant; Stewart, Harold D.; Dyck, Christopher William

2005-01-01T23:59:59.000Z

190

Thermodynamic and kinetic control of the lateral Si wire growth  

SciTech Connect (OSTI)

Reproducible lateral Si wire growth has been realized on the Si (100) surface. In this paper, we present experimental evidence showing the unique role that carbon plays in initiating lateral growth of Si wires on a Si (100) substrate. Once initiated in the presence of ?5 ML of C, lateral growth can be achieved in the range of temperatures, T?=?450650?C, and further controlled by the interplay of the flux of incoming Si atoms with the size and areal density of Au droplets. Critical thermodynamic and kinetic aspects of the growth are discussed in detail.

Dedyulin, Sergey N., E-mail: sdedyuli@uwo.ca; Goncharova, Lyudmila V. [Department of Physics and Astronomy, The University of Western Ontario, 1151 Richmond St., London, Ontario N6A 3K7 (Canada)

2014-03-24T23:59:59.000Z

191

Evaluate Si Layers: Cooperative Research and Development Final Report, CRADA Number CRD-07-255  

SciTech Connect (OSTI)

Evaluate Si layers based on heteroepitaxial Si growth on RABITS textured metal substrates coated with textured buffer layers.

Teplin, C.

2013-04-01T23:59:59.000Z

192

Geology of the Trans-Missouri River Tunnel project, Kansas City, Missouri  

SciTech Connect (OSTI)

The geology of the Missouri River Valley at Kansas City is interpreted from the borehole and construction site data along the route of the Trans-Missouri River Tunnel, a 4.4 km long water tunnel constructed at a depth of 90--97.5 m below the floodplain of the Missouri River. The data from the site investigation is used to construct a detailed stratigraphic cross-section of the subsurface units to a depth of 120 m and extending in a north-south direction the length of the tunnel. The rock section is divided into 2 broad categories, (a) alluvium and (b) bedrock. The alluvium (Pleistocene-Holocene) fills the Missouri River Valley to a depth of 38 m along the tunnel route. An exception is a deep narrow channel near the center of the valley, the alluvium is 55 m thick and the lower several meters of the channel is filled with glacial till( ). The alluvium rests unconformably on Pennsylvanian bedrock consisting of thin strata arranged in cyclical sequences or cyclothems and belonging to the following groups in ascending order: Upper Cherokee, Marmaton and Lower Pleasanton. The test drill core data made it possible to conduct a detailed analysis of the subsurface stratigraphy. Of major importance is the stratigraphic position of a thick channel-fill deposit in the Labette Formation, Marmaton Group, a producing horizon in several small oil and gas fields in western Missouri and eastern Kansas. The 327.6 cm dia. bore for the essentially horizontal tunnel is constructed in predominately silty and sandy gray shale located stratigraphically near the Cherokee-Marmaton contact and in younger channel-fill deposits.

Gentile, R.J. (Univ. of Missouri, Kansas City, MO (United States). Dept. of Geosciences)

1993-03-01T23:59:59.000Z

193

Operational Challenges in Gas-To-Liquid (GTL) Transportation Through Trans Alaska Pipeline System (TAPS)  

SciTech Connect (OSTI)

Oil production from Alaskan North Slope oil fields has steadily declined. In the near future, ANS crude oil production will decline to such a level (200,000 to 400,000 bbl/day) that maintaining economic operation of the Trans-Alaska Pipeline System (TAPS) will require pumping alternative products through the system. Heavy oil deposits in the West Sak and Ugnu formations are a potential resource, although transporting these products involves addressing important sedimentation issues. One possibility is the use of Gas-to-Liquid (GTL) technology. Estimated recoverable gas reserves of 38 trillion cubic feet (TCF) on the North Slope of Alaska can be converted to liquid with GTL technology and combined with the heavy oils for a product suitable for pipeline transport. Issues that could affect transport of this such products through TAPS include pumpability of GTL and crude oil blends, cold restart of the pipeline following a prolonged winter shutdown, and solids deposition inside the pipeline. This study examined several key fluid properties of GTL, crude oil and four selected blends under TAPS operating conditions. Key measurements included Reid Vapor Pressure, density and viscosity, PVT properties, and solids deposition. Results showed that gel strength is not a significant factor for the ratios of GTL-crude oil blend mixtures (1:1; 1:2; 1:3; 1:4) tested under TAPS cold re-start conditions at temperatures above - 20 F, although Bingham fluid flow characteristics exhibited by the blends at low temperatures indicate high pumping power requirements following prolonged shutdown. Solids deposition is a major concern for all studied blends. For the commingled flow profile studied, decreased throughput can result in increased and more rapid solid deposition along the pipe wall, resulting in more frequent pigging of the pipeline or, if left unchecked, pipeline corrosion.

Godwin A. Chukwu; Santanu Khataniar; Shirish Patil; Abhijit Dandekar

2006-06-30T23:59:59.000Z

194

Prediction of Thermal Conductivity for Irradiated SiC/SiC Composites by Informing Continuum Models with Molecular Dynamics Data  

SciTech Connect (OSTI)

This article proposes a new method to estimate the thermal conductivity of SiC/SiC composites subjected to neutron irradiation. The modeling method bridges different scales from the atomic scale to the scale of a 2D SiC/SiC composite. First, it studies the irradiation-induced point defects in perfect crystalline SiC using molecular dynamics (MD) simulations to compute the defect thermal resistance as a function of vacancy concentration and irradiation dose. The concept of defect thermal resistance is explored explicitly in the MD data using vacancy concentrations and thermal conductivity decrements due to phonon scattering. Point defect-induced swelling for chemical vapor deposited (CVD) SiC as a function of irradiation dose is approximated by scaling the corresponding MD results for perfect crystal ?-SiC to experimental data for CVD-SiC at various temperatures. The computed thermal defect resistance, thermal conductivity as a function of grain size, and definition of defect thermal resistance are used to compute the thermal conductivities of CVD-SiC, isothermal chemical vapor infiltrated (ICVI) SiC and nearly-stoichiometric SiC fibers. The computed fiber and ICVI-SiC matrix thermal conductivities are then used as input for an Eshelby-Mori-Tanaka approach to compute the thermal conductivities of 2D SiC/SiC composites subjected to neutron irradiation within the same irradiation doses. Predicted thermal conductivities for an irradiated Tyranno-SA/ICVI-SiC composite are found to be comparable to available experimental data for a similar composite ICVI-processed with these fibers.

Nguyen, Ba Nghiep; Gao, Fei; Henager, Charles H.; Kurtz, Richard J.

2014-05-01T23:59:59.000Z

195

MODEL-BASED FEEDBACK CONTROL FOR AN AUTOMATED TRANSFER OUT OF SI OPERATION DURING SI TO HCCI TRANSITIONS IN GASOLINE ENGINES  

E-Print Network [OSTI]

MODEL-BASED FEEDBACK CONTROL FOR AN AUTOMATED TRANSFER OUT OF SI OPERATION DURING SI TO HCCI for the transition between spark ignition (SI) and homo- geneous charge compression ignition (HCCI) combustion modes by approaching the transfer out of SI operation during the SI into HCCI transition in a closed-loop control

Stefanopoulou, Anna

196

Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces Luxmi, N. Srivastava, Guowei He, and R. M. Feenstra  

E-Print Network [OSTI]

1 Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces Luxmi, N. Srivastava of graphene formed on the ( 1000 ) surface (the C-face) and the (0001) surface (the Si-face) of Si) and low-energy electron microscopy (LEEM). The graphene forms due to preferential sublimation of Si from

Feenstra, Randall

197

In situ toughened SiC ceramics with Al-B-C additions and oxide-coated SiC platelet/SiC composites  

SciTech Connect (OSTI)

This work aimed at fabrication and characterization of high toughness SiC ceramics through the applications of in situ toughening and SiC platelet reinforcement. The processing-microstructure-property relations of hot pressed SiC with Al, B, and C additions (designated as ABC-SiC) were investigated. Through a liquid phase sintering mechanism, dense SiC was obtained by hot pressing at a temperature as low as 1,700 C with 3 wt% Al, 0.6 wt% B, and 2 wt% C additions. These sintering aids also enhanced the {beta}-to-{alpha} (3C-to-4H) phase transformation, which promoted SiC grains to grow into plate-like shapes. Under optimal processing conditions, the microstructure exhibited high-aspect-ratio plate-shaped grains with a thin (< 1 nm) Al-containing amorphous grain boundary film. The mechanical properties of the toughened SiC and the composites were evaluated in comparison with a commercial Hexoloy SiC under identical test conditions. The C-curve behavior was examined using the strength-indentation load relationship and compared with that directly measured using precracked compact tension specimens. The in situ toughened ABC-SiC exhibited much improved flaw tolerance and a significantly rising R-curve behavior. A steady-state toughness in excess of 9 MPam{sup 1/2} was recorded for the ABC-SiC in comparison to a single valued toughness below 3 MPam{sup 1/2} for the Hexoloy. Toughening in the ABC-SiC was mainly attributed to grain bridging and subsequent pullout of the plate-shaped grains. The high toughness ABC-SiC exhibited a bend strength of 650 MPa with a Weibull modulus of 19; in comparison, the commercial SiC showed a bend strength of 400 MPa with a Weibull modulus of 6. Higher fracture toughness was also achieved by the reinforcement of SiC platelets, encapsulated with alumina, yttria, or silica, in a SiC matrix.

Cao, J. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering; [Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

1996-12-01T23:59:59.000Z

198

Effect of Al-Si-Al and Al-Si-Si-Al Pairs in the ZSM-5 Zeolite Framework on the 27 NMR Spectra. A Combined High-Resolution 27  

E-Print Network [OSTI]

Effect of Al-Si-Al and Al-Si-Si-Al Pairs in the ZSM-5 Zeolite Framework on the 27 Al NMR Spectra. A Combined High-Resolution 27 Al NMR and DFT/MM Study Jiri´ Dedecek, Stepan Sklenak,*, Chengbin Li, Blanka of the presence of Al-O-Si-O-Al and Al-O-Si-O-Si-O-Al sequences in the ZSM-5 zeolite framework on the local

Sklenak, Stepan

199

Thermal Conductivity of SiC/Si Composites Porting PNNL EMTA Code for Fusion Analyses  

SciTech Connect (OSTI)

An existing modeling method, the EMTA (Eshelby-Mori-Tanaka approach) modeling approach [1], is applied to the study of SiC/SiC 2D woven composites for fusion reactor applications for the first time, to the best of our knowledge, with excellent results. We compare EMTA model results to existing thermal conductivity data for these materials and suggest that in the future this approach can be beneficial by providing us with tools to further optimize these composite materials for fusion energy applications since the EMTA method and code can address both thermal and mechanical properties with the same framework.

Henager, Charles H.; Nguyen, Ba Nghiep

2013-04-19T23:59:59.000Z

200

EFFECT OF SiO2 TICKNESSES IN THERMAL-SiO2/PECVD-SiN STACKS ON SURFACE PASSIVATION OF n-TYPE Cz SILICON SUBSTRATES  

E-Print Network [OSTI]

. A prominent example of SiO2 surface passivation is given by the world-record solar cell efficiency of the passivated-emitter and rear locally- diffused (PERL) c-Si solar cell [1]. The surface passivation of the as the standard RCA procedure prior to oxidation in a cleaned quartz furnace tube at high temperat

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition  

SciTech Connect (OSTI)

We propose to grow graphene on SiC by a direct carbon feeding through propane flow in a chemical vapor deposition reactor. X-ray photoemission and low energy electron diffraction show that propane allows to grow few-layer graphene (FLG) on 6H-SiC(0001). Surprisingly, FLG grown on (0001) face presents a rotational disorder similar to that observed for FLG obtained by annealing on (000-1) face. Thanks to a reduced growth temperature with respect to the classical SiC annealing method, we have also grown FLG/3C-SiC/Si(111) in a single growth sequence. This opens the way for large-scale production of graphene-based devices on silicon substrate.

Michon, A.; Vezian, S.; Portail, M. [CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne (France); Ouerghi, A. [CNRS-LPN, Route de Nozay, 91460 Marcoussis (France); Zielinski, M.; Chassagne, T. [NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)

2010-10-25T23:59:59.000Z

202

Do Si stars undergo any magnetic braking?  

E-Print Network [OSTI]

The old question of rotational braking of Ap Si stars is revisited on the empirical side, taking advantage of the recent Hipparcos results. Field stars with various evolutionary states are considered, and it is shown that the loose correlation between their rotational period and their surface gravity is entirely compatible with conservation of angular momentum. No evidence is found for any loss of angular momentum on the Main Sequence, which confirms earlier results based on less reliable estimates of surface gravity. The importance of reliable, fundamental Teff determinations of Bp and Ap stars is emphasized.

P. North

1998-02-23T23:59:59.000Z

203

Isoscalar giant resonance strength in Si-28  

E-Print Network [OSTI]

PHYSICAL REVIEW C 76, 027304 (2007) Isoscalar giant resonance strength in 28Si D. H. Youngblood, Y.-W. Lui, and H. L. Clark Cyclotron Institute, Texas A&M University, College Station, Texas 77843, USA (Received 7 May 2007; published 28 August... that somewhat mimic an E1 angular distribution. This work was supported in part by the U.S. Department of Energy under grant No. DE-FG03-93ER40773 and by The Robert A. Welch Foundation under grant No. A-0558. [1] D. H. Youngblood, Y.-W. Lui, and H. L. Clark...

Youngblood, David H.; Lui, Y. -W; Clark, H. L.

2007-01-01T23:59:59.000Z

204

Phonon-assisted transient electroluminescence in Si  

SciTech Connect (OSTI)

The phonon-replica infrared emission is observed at room temperature from indirect band gap Si light-emitting diode under forward bias. With increasing injection current density, the broadened electroluminescence spectrum and band gap reduction are observed due to joule heating. The spectral-resolved temporal response of electroluminescence reveals the competitiveness between single (TO) and dual (TO?+?TA) phonon-assisted indirect band gap transitions. As compared to infrared emission with TO phonon-replica, the retarder of radiative recombination at long wavelength region (?1.2??m) indicates lower transition probability of dual phonon-replica before thermal equivalent.

Cheng, Tzu-Huan, E-mail: f94943139@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan (China); Chu-Su, Yu [Institute of Biomedical Engineering, National Taiwan University, Taipei, Taiwan and Department of Laboratory Medicine, National Taiwan University Hospital, Taipei, Taiwan (China); Liu, Chien-Sheng [Institute of Biomedical Engineering, National Taiwan University, Taipei, Taiwan (China); Lin, Chii-Wann [Institute of Biomedical Engineering and Institute of Electrical Engineering, National Taiwan University, Taipei, Taiwan (China)

2014-06-30T23:59:59.000Z

205

Si Brilliant Technology Ltd | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty Ltd Jump to: navigation,Pvt LtdShrub Oak, New York: Energy ResourcesSi

206

[SiAu4]: Aurosilane. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLasDelivered energy consumption byAbout SRNL HomeYoung InventorNothing About ItZihua[SiAu4]:

207

Sandia National Laboratories: SiC  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 -theErikGroundbreaking Work onClimateSemiconductorShaheen-Portman BillSiC Sandia,

208

A=17Si (1993TI07)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLasDelivered‰PNGExperience4AJ01) (See Energy0AJ04)86AJ04) (Not6AJ04) (See the6AJ04)86AJ04)Si

209

EIS-0450: TransWest Express 600 kV Direct Current Transmission Project in Wyoming, Colorado, Utah, and Nevada  

Broader source: Energy.gov [DOE]

This EIS, being prepared jointly by DOEs Western Area Power Administration and the Department of the Interiors Bureau of Land Management (Wyoming State Office), evaluates the environmental impacts of granting a right-of-way for the TransWest Express 600-kilovolt Direct Current Transmission Project and amending a land use plan. The project consists of an overhead transmission line that would extend approximately 725 miles from south-central Wyoming, through Colorado and Utah. Western proposes to be a joint owner of the project.

210
211

Thermomechanical Performance of Si-Ti-C-O and Sintered SiC Fiber-Bonded Ceramics at High Temperatures  

SciTech Connect (OSTI)

The stress-temperature-lifetime response of Si-Ti-C-O fiber-bonded ceramic (Tyrannohex ) and sintered SiC fiber-bonded ceramic (SA-Tyrannohex ) materials were investigated in air from 500 to 1150 C and 500 to 1400 C, respectively. The apparent threshold stress of Si-Ti-C-O fiber-bonded ceramic was about 175 MPa in the 500-1150 C temperature range. When the applied stress of the sintered SiC fiber-bonded ceramic was below an apparent threshold stress (e.g., ~225MPa) for tests conducted 1150 C, no failures were observed for lifetimes up to 1000h. In the case of sintered SiC fiber-bonded ceramic, at the temperature of 1300 C, the apparent threshold stress decreased to 175 MPa. The decrease in strength seemed to be caused by grain growth which was confirmed from the SEM fractography. Both fiber-bonded ceramics exhibited much higher durability than a commercial SiC/SiC composite at temperatures above 500 C. In addition, results suggested that the sintered SiC fiber-bonded ceramic (SA-Tyrannohex) is more stable than a Hi-Nicalon/MI SiC composite with BN/SiC fiber coating at temperatures above 1300 C.

Matsunaga, Tadashi [ORNL; Lin, Hua-Tay [ORNL; Singh, Mrityunjay [NASA-Glenn Research Center, Cleveland; Kajii, Shinji [Ube Industries, Ltd.; Matsunaga, Kenji [Ube Industries, Ltd.; Ishikawa, Toshihiro [Ube Industries, Ltd.

2011-01-01T23:59:59.000Z

212

New interface structure for A-type CoSi,/Si(lll) M. F. Chisholm and S. J. Pennycook  

E-Print Network [OSTI]

of the silicide, leading to sevenfold coordinated metal atoms at the interface [see Fig. l(a'l]. The disilicide proposed."' They have been classified according to two criteria: the coordina- tion of the metal atoms join along flat bulk terminated { 111) surfaces, the silicon substrate binds either to the metal atoms

Pennycook, Steve

213

Microstructures of Si surface layers implanted with Cu  

SciTech Connect (OSTI)

Microstructures of Si ion-implanted with Cu have been characterized by TEM after annealing. For 1.2 at.%, the Cu is trapped at planar defects, but for 10 at.%, {eta}-Cu{sub 3}Si forms and Cu diffuses at its equilibrium solubility. These observations allow proper evaluation of the binding energies of Cu to previously formed internal cavities (2.2 eV) and {eta}-Cu{sub 3}Si (1.7 eV). The 10 at.% Cu layer promotes oxidation of Si catalyzed by {eta}-Cu{sub 3}Si. The microstructures also indicate that Si implanted with {approximately}2 at.% Cu reforms epitaxially with embedded defects after 8 hr at 700C, but for {approximately}10 at.% Cu, epitaxy is not recovered after 6 hours at 600C.

Follstaedt, D.M.; Myers, S.M.

1993-12-31T23:59:59.000Z

214

Microwave joining of SiC ceramics and composites  

SciTech Connect (OSTI)

Potential applications of SiC include components for advanced turbine engines, tube assemblies for radiant burners and petrochemical processing and heat exchangers for high efficiency electric power generation systems. Reliable methods for joining SiC are required in order to cost-effectively fabricate components for these applications from commercially available shapes and sizes. This manuscript reports the results of microwave joining experiments performed using two different types of SiC materials. The first were on reaction bonded SiC, and produced joints with fracture toughness equal to or greater than that of the base material over an extended range of joining temperatures. The second were on continuous fiber-reinforced SiC/SiC composite materials, which were successfully joined with a commercial active brazing alloy, as well as by using a polymer precursor.

Ahmad, I.; Silberglitt, R.; Tian, Y.L. [FM Technologies, Inc., Fairfax, VA (United States); Katz, J.D. [Los Alamos National Lab., NM (United States)

1997-04-01T23:59:59.000Z

215

Tribological Properties of Self-assembled Monolayers on Au, SiOx and Si Surfaces  

SciTech Connect (OSTI)

Using interracial force microscopy (IFM), the tribological properties of self-assembled monolayer (SAM) on Si surfaces produced by a new chemical strategy are investigated and compared to those of classical SAM systems, which include alkanethiols on Au and alkylsilanes on SiO{sub x}. The new SAM films are prepared by depositing n-alkyl chains with OH-terminations onto Cl-terminated Si substrates. The chemical nature of the actual lubricating molecules, n-dodecyl, is kept constant in all three thin film systems for direct comparison and similarities and differences in tribological properties are observed. The adhesion strength is virtually identical for all three systems; however, frictional properties differ due to differences in film packing. Differences in the chemical bonds that attach the lubricant molecules to the substrate are also discussed as they influence variations in film wear and durability. It is demonstrated that the new SAM films are capable of controlling the friction and adhesion of Si surfaces as well as the classical SAMs in addition to providing a greater potential to be more reproducible and more durable.

KIM,HYUN I.; BOIADJIEV,V.; HOUSTON,JACK E.; ZHU,X.-Y; KIELY,J.D.

2000-07-20T23:59:59.000Z

216

P-type SiGe/Si Superlattice Cooler Xiaofeng Fan, Gehong Zeng, Edward Croke1  

E-Print Network [OSTI]

the temperature of the device below ambient. For a material to be a good thermoelectric cooler, it must have]. SiGe is a good thermoelectric material especially for high temperature applications [11 element thermoelectric devices, and it will enable us to achieve large cooling capacities with relatively

217

Compatibility of SiC and SiC Composites with Molten Lead  

SciTech Connect (OSTI)

The choice of structural material candidates to contain Lead at 1000 C are limited in number. Silicon carbide composites comprise one choice of possible containment materials. Short term screening studies (120 hours) were undertaken to study the behavior of Silicon Carbide, Silicon Nitride, elemental Silicon and various Silicon Carbide fiber composites focusing mainly on melt infiltrated composites. Isothermal experiments at 1000 C utilized graphite fixtures to contain the Lead and material specimens under a low oxygen partial pressure environment. The corrosion weight loss values (grams/cm{sup 2} Hr) obtained for each of the pure materials showed SiC (monolithic CVD or Hexoloy) to have the best materials compatibility with Lead at this temperature. Increased weight loss values were observed for pure Silicon Nitride and elemental Silicon. For the SiC fiber composite samples those prepared using a SiC matrix material performed better than Si{sub 3}N{sub 4} as a matrix material. Composites prepared using a silicon melt infiltration process showed larger corrosion weight loss values due to the solubility of silicon in lead at these temperatures. When excess silicon was removed from these composite samples the corrosion performance for these material improved. These screening studies were used to guide future long term exposure (both isothermal and non-isothermal) experiments and Silicon Carbide composite fabrication work.

H Tunison

2006-03-07T23:59:59.000Z

218

Steel-SiC Metal Matrix Composite Development  

SciTech Connect (OSTI)

The goal of this project is to develop a method for fabricating SiC-reinforced high-strength steel. We are developing a metal-matrix composite (MMC) in which SiC fibers are be embedded within a metal matrix of steel, with adequate interfacial bonding to deliver the full benefit of the tensile strength of the SiC fibers in the composite.

Smith, Don D.

2005-07-17T23:59:59.000Z

219

Structural and magnetic properties of irradiated SiC  

SciTech Connect (OSTI)

We present a comprehensive structural characterization of ferromagnetic SiC single crystals induced by Ne ion irradiation. The ferromagnetism has been confirmed by electron spin resonance, and possible transition metal impurities can be excluded to be the origin of the observed ferromagnetism. Using X-ray diffraction and Rutherford backscattering/channeling spectroscopy, we estimate the damage to the crystallinity of SiC, which mutually influences the ferromagnetism in SiC.

Wang, Yutian; Helm, Manfred [Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, 01314 Dresden (Germany); Technische Universitt Dresden, 01062 Dresden (Germany); Chen, Xuliang; Yang, Zhaorong [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Li, Lin [Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, 01314 Dresden (Germany); Department of Physics and Electronics, School of Science, Beijing University of Chemical Technology, Beijing 100029 (China); Shalimov, Artem; Prucnal, Slawomir; Munnik, Frans; Skorupa, Wolfgang; Zhou, Shengqiang, E-mail: s.zhou@hzdr.de [Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, 01314 Dresden (Germany); Tong, Wei [High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China)

2014-05-07T23:59:59.000Z

220

Method for the hydrogenation of poly-si  

DOE Patents [OSTI]

A method for hydrogenating poly-si. Poly-si is placed into the interior of a chamber. A filament is placed into the interior of a chamber. The base pressure of the interior of the chamber is evacuated, preferably to 10.sup.-6 Torr or less. The poly-si is heated for a predetermined poly-si heating time. The filament is heated by providing an electrical power to the filament. Hydrogen is supplied into the pressurized interior of the chamber comprising the heated poly-si and the heated filament. Atomic hydrogen is produced by the filament at a rate whereby the atomic hydrogen surface density at the poly-si is less than the poly-si surface density. Preferably, the poly-si is covered from the atomic hydrogen produced by the heated filament for a first predetermined covering time. Preferably, the poly-si is then uncovered from the atomic hydrogen produced by the heated filament for a first hydrogenation time.

Wang, Qi

2013-11-12T23:59:59.000Z

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Manufacturing Metrology for c-Si Module Reliability/Durabiltiy  

Broader source: Energy.gov (indexed) [DOE]

Manufacturing Metrology for c-Si Module ReliabilityDurability Marianne P. Rodgers Marianne P. Rodgers Ashwani Kaul Kristopher O. Davis Neelkanth G. Dhere Hubert...

222

SiC Power MOSFET with Improved Gate Dielectric  

SciTech Connect (OSTI)

In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

Sbrockey, Nick M; Tompa, Gary S; Spencer, Michael G; Chandrashekhar, Chandra MVS

2010-08-23T23:59:59.000Z

223

Synthesis and Characterization of Structured Si-Carbon Nanocomposite...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Si-Carbon Nanocomposite Anodes and Functional Polymer Binders Vehicle Technologies Office Merit Review 2014: High Energy, Long Cycle Life Lithium-ion Batteries for EV Applications...

224

al sio2 si: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

de Extensin Universitaria Red Metropolitana Red Vsquez, Carlos 497 Graeber et al. 2014 1 Supporting Information (SI Appendix) Biology and Medicine Websites...

225

HD Applications of Significantly Downsized SI Engines Using Alcohol...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

SI Engines Using Alcohol DI for Knock Avoidance Direct injection of a second fuel (ethanol or methanol) is explored as a means of avoiding knock in turbocharged,...

226

Sponge-like Si-SiO{sub 2} nanocompositeMorphology studies of spinodally decomposed silicon-rich oxide  

SciTech Connect (OSTI)

Sponge-like Si nanostructures embedded in SiO{sub 2} were fabricated by spinodal decomposition of sputter-deposited silicon-rich oxide with a stoichiometry close to that of silicon monoxide. After thermal treatment a mean feature size of about 3 nm was found in the phase-separated structure. The structure of the Si-SiO{sub 2} nanocomposite was investigated by energy-filtered transmission electron microscopy (EFTEM), EFTEM tomography, and atom probe tomography, which revealed a percolated Si morphology. It was shown that the percolation of the Si network in 3D can also be proven on the basis of 2D EFTEM images by comparison with 3D kinetic Monte Carlo simulations.

Friedrich, D.; Schmidt, B.; Heinig, K. H.; Liedke, B.; Mcklich, A.; Hbner, R. [Helmholtz-Zentrum Dresden Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany)] [Helmholtz-Zentrum Dresden Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); Wolf, D. [Triebenberg Laboratory, Institute of Structure Physics, Technische Universitt Dresden, 01062 Dresden (Germany)] [Triebenberg Laboratory, Institute of Structure Physics, Technische Universitt Dresden, 01062 Dresden (Germany); Klling, S. [Fraunhofer Center Nanoelectronic Technologies, Knigsbrcker Str. 180, 01099 Dresden (Germany)] [Fraunhofer Center Nanoelectronic Technologies, Knigsbrcker Str. 180, 01099 Dresden (Germany); Mikolajick, T. [NaMLab GmbH, Nthnitzer Str. 64, 01187 Dresden (Germany) [NaMLab GmbH, Nthnitzer Str. 64, 01187 Dresden (Germany); Technische Universitt Dresden, Nthnitzer Str. 64, 01187 Dresden (Germany)

2013-09-23T23:59:59.000Z

227

Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Diffusion of Fission Product Surrogates  

SciTech Connect (OSTI)

MAX phases, such as titanium silicon carbide (Ti3SiC2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti3SiC2 has been suggested in the literature as a possible fuel cladding material. Prior to the application, it is necessary to investigate diffusivities of fission products in the ternary compound at elevated temperatures. This study attempts to obtain relevant data and make an initial assessment for Ti3SiC2. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti3SiC2, SiC, and a dual-phase nanocomposite of Ti3SiC2/SiC synthesized at PNNL. Thermal annealing and in-situ Rutherford backscattering spectrometry (RBS) were employed to study the diffusivity of the various implanted species in the materials. In-situ RBS study of Ti3SiC2 implanted with Au ions at various temperatures was also performed. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti3SiC2 occurs during ion implantation at 873 K. Cs in Ti3SiC2 is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti3SiC2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Further studies of the related materials are recommended.

Henager, Charles H.; Jiang, Weilin

2014-11-01T23:59:59.000Z

228

Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Thermal and Mechanical Properties  

SciTech Connect (OSTI)

SiC-polymers (pure polycarbosilane and polycarbosilane filled with SiC-particles) are being combined with Si and TiC powders to create a new class of polymer-derived ceramics for consideration as advanced nuclear materials in a variety of applications. Compared to pure SiC these materials have increased fracture toughness with only slightly reduced thermal conductivity. Future work with carbon nanotube (CNT) mats will be introduced with the potential to increase the thermal conductivity and the fracture toughness. At present, this report documents the fabrication of a new class of monolithic polymer derived ceramics, SiC + SiC/Ti3SiC2 dual phase materials. The fracture toughness of the dual phase material was measured to be significantly greater than Hexoloy SiC using indentation fracture toughness testing. However, thermal conductivity of the dual phase material was reduced compared to Hexoloy SiC, but was still appreciable, with conductivities in the range of 40 to 60 W/(m K). This report includes synthesis details, optical and scanning electron microscopy images, compositional data, fracture toughness, and thermal conductivity data.

Henager, Charles H.; Alvine, Kyle J.; Roosendaal, Timothy J.; Shin, Yongsoon; Nguyen, Ba Nghiep; Borlaug, Brennan A.; Jiang, Weilin

2014-04-01T23:59:59.000Z

229

Ceramic Technology Project database: September 1990 summary report. [SiC, SiN, whisker-reinforced SiN, ZrO-toughened aluminas, zirconias, joints  

SciTech Connect (OSTI)

Data generated within the Ceramic Technology Project (CTP) represent a valuable resource for both research and industry. The CTP database was created to provide easy access to this information in electronic and hardcopy forms by using a computerized database and by issuing periodic hardcopy reports on the database contents. This report is the sixth in a series of semiannual database summaries and covers recent additions to the database, including joined brazed specimen test data. It covers 1 SiC, 34 SiN, 10 whisker-reinforced SiN, 2 zirconia-toughened aluminas, 8 zirconias, and 34 joints.

Keyes, B.L.P.

1992-06-01T23:59:59.000Z

230

The novel usage of spectroscopic ellipsometry for the development of amorphous Si solar cells  

E-Print Network [OSTI]

May 2010 Keywords: a-Si:H Thin film Si solar cell Spectroscopic ellipsometry (SE) a b s t r a c t We analyzed with relation to structural and electrical properties of a-Si:H thin film for solar cell and faster methodology to develop a-Si:H thin film for thin film Si solar cells using SE measurements

Park, Byungwoo

231

Western Australian Hub of SiMERR Australia (National Centre of Science, ICT and  

E-Print Network [OSTI]

SiMERR WA Western Australian Hub of SiMERR Australia (National Centre of Science, ICT and Mathematics Education for Rural and Regional Australia) Background Since 2005 SiMERR WA, the Western Australian Hub of SiMERR Australia, has been led by a team of academics from Curtin University. Si

232

Flex Fuel Optimized SI and HCCI Engine  

SciTech Connect (OSTI)

The central objective of the proposed work is to demonstrate an HCCI (homogeneous charge compression ignition) capable SI (spark ignited) engine that is capable of fast and smooth mode transition between SI and HCCI combustion modes. The model-based control technique was used to develop and validate the proposed control strategy for the fast and smooth combustion mode transition based upon the developed control-oriented engine; and an HCCI capable SI engine was designed and constructed using production ready two-step valve-train with electrical variable valve timing actuating system. Finally, smooth combustion mode transition was demonstrated on a metal engine within eight engine cycles. The Chrysler turbocharged 2.0L I4 direct injection engine was selected as the base engine for the project and the engine was modified to fit the two-step valve with electrical variable valve timing actuating system. To develop the model-based control strategy for stable HCCI combustion and smooth combustion mode transition between SI and HCCI combustion, a control-oriented real-time engine model was developed and implemented into the MSU HIL (hardware-in-the-loop) simulation environment. The developed model was used to study the engine actuating system requirement for the smooth and fast combustion mode transition and to develop the proposed mode transition control strategy. Finally, a single cylinder optical engine was designed and fabricated for studying the HCCI combustion characteristics. Optical engine combustion tests were conducted in both SI and HCCI combustion modes and the test results were used to calibrate the developed control-oriented engine model. Intensive GT-Power simulations were conducted to determine the optimal valve lift (high and low) and the cam phasing range. Delphi was selected to be the supplier for the two-step valve-train and Denso to be the electrical variable valve timing system supplier. A test bench was constructed to develop control strategies for the electrical variable valve timing (VVT) actuating system and satisfactory electrical VVT responses were obtained. Target engine control system was designed and fabricated at MSU for both single-cylinder optical and multi-cylinder metal engines. Finally, the developed control-oriented engine model was successfully implemented into the HIL simulation environment. The Chrysler 2.0L I4 DI engine was modified to fit the two-step vale with electrical variable valve timing actuating system. A used prototype engine was used as the base engine and the cylinder head was modified for the two-step valve with electrical VVT actuating system. Engine validation tests indicated that cylinder #3 has very high blow-by and it cannot be reduced with new pistons and rings. Due to the time constraint, it was decided to convert the four-cylinder engine into a single cylinder engine by blocking both intake and exhaust ports of the unused cylinders. The model-based combustion mode transition control algorithm was developed in the MSU HIL simulation environment and the Simulink based control strategy was implemented into the target engine controller. With both single-cylinder metal engine and control strategy ready, stable HCCI combustion was achived with COV of 2.1% Motoring tests were conducted to validate the actuator transient operations including valve lift, electrical variable valve timing, electronic throttle, multiple spark and injection controls. After the actuator operations were confirmed, 15-cycle smooth combustion mode transition from SI to HCCI combustion was achieved; and fast 8-cycle smooth combustion mode transition followed. With a fast electrical variable valve timing actuator, the number of engine cycles required for mode transition can be reduced down to five. It was also found that the combustion mode transition is sensitive to the charge air and engine coolant temperatures and regulating the corresponding temperatures to the target levels during the combustion mode transition is the key for a smooth combustion mode transition. As a summary, the proposed combust

Zhu, Guoming; Schock, Harold; Yang, Xiaojian; Huisjen, Andrew; Stuecken, Tom; Moran, Kevin; Zhen, Ron; Zhang, Shupeng

2013-09-30T23:59:59.000Z

233

Processing and Oxidation Behavior of Nb-Si-B Intermetallics  

SciTech Connect (OSTI)

Single phase materials of {alpha}-Nb{sub 5}Si{sub 3}, Nb{sub 5}(Si,B){sub 3} (T2) and Nb{sub 5}Si{sub 3}B{sub x} (D8{sub 8}) in the Nb-Si-B system were prepared by powder metallurgy processing. T2 was almost fully dense, while {alpha}-Nb{sub 5}Si{sub 3} and D8{sub 8} were porous after sintering at 1900 C for 2 hours. The lattice parameters of T2 decreased linearly with the substitution of B for Si. Isothermal oxidation testing at 1000 C in flowing air indicated that the oxidation resistances of T2 and D8{sub 8} are much better than {alpha}-Nb{sub 5}Si{sub 3}, but still extremely poor compared to the boron-modified Mo{sub 5}Si{sub 3}. Extensive cracking in the oxide scale and matrix were observed and arose from the volume expansion associated with the formation of Nb{sub 2}O{sub 5} and boron-containing silica glass.

Y.LIU; A.J. Thom; M.J. Kramer; M. Akinc

2004-09-30T23:59:59.000Z

234

Magnetic Properties of Single-Crystalline CoSi Nanowires  

E-Print Network [OSTI]

CoxSi alloys showed possible use of metal silicides in the future Si-based spintronics technology.3,10 Because metal silicide NWs can be used as interconnects in integrated circuits and they are compatible with the processing of complementary metal-oxide-semiconductor (CMOS) de- vices,11 synthesis of metal silicide NWs

Kim, Bongsoo

235

Hafnium silicide formation on Si(100) upon annealing  

SciTech Connect (OSTI)

High dielectric constant materials, such as HfO{sub 2}, have been extensively studied as alternatives to SiO{sub 2} in new generations of Si based devices. Hf silicate/silicide formation has been reported in almost all literature studies of Hf based oxides on Si, using different methods of preparation. A silicate interface resembles close to the traditional Si/SiO{sub 2}. The silicate very likely forms a very sharp interface between the Si substrate and the metal oxide, and would be suitable for device applications. However, the thermal instability of the interfacial silicate/oxide film leads to silicidation, causing a dramatic loss of the gate oxide integrity. Despite the importance of the Hf silicide surface and interface with Si, only a few studies of this surface are present in the literature, and a structural determination of the surface has not been reported. This paper reports a study of the Hf silicide formation upon annealing by using a combination of XPS, LEED, and x-ray photoelectron diffraction (XPD) analyses. Our results clearly indicate the formation of a unique ordered Hf silicide phase (HfSi{sub 2}), which starts to crystallize when the annealing temperature is higher than 550 deg. C.

Siervo, A. de [Experimentelle Physik 1, Universitaet Dortmund, Otto-Hahn-Str. 4, D 44221 Dortmund (Germany); Laboratorio Nacional de Luz Sincrotron, Caixa Postal 6192, 13084-971, Campinas, Sao Paulo (Brazil); Fluechter, C. R.; Weier, D.; Schuermann, M.; Dreiner, S.; Westphal, C. [Experimentelle Physik 1, Universitaet Dortmund, Otto-Hahn-Str. 4, D 44221 Dortmund (Germany); Carazzolle, M. F.; Pancotti, A.; Landers, R.; Kleiman, G. G. [Instituto de Fisica 'Gleb Wataghin', Universidade Estadual de Campinas, Caixa Postal 6165, 13083-970, Campinas, Sao Paulo (Brazil)

2006-08-15T23:59:59.000Z

236

SiGeCSi superlattice microcoolers Xiaofeng Fan,a)  

E-Print Network [OSTI]

stabilization of microelectronic and optoelectronic devices. SiGeC can be lattice matched to Si and optoelectronic devices, but their pro- cessing is a bulk technology and is incompatible with inte- grated circuit fabrication process. Solid-state coolers mono- lithically integrated with microelectronic and optoelectronic

237

Astrophysically important {sup 26}Si states studied with the {sup 28}Si(p,t){sup 26}Si reaction. II. Spin of the 5.914-MeV {sup 26}Si level and galactic {sup 26}Al production  

SciTech Connect (OSTI)

The {sup 28}Si(p,t){sup 26}Si reaction has been studied to resolve a controversy surrounding the properties of the {sup 26}Si level at 5.914 MeV and its contribution to the {sup 25}Al(p,{gamma}){sup 26}Si reaction rate in novae, which affects interpretations of galactic {sup 26}Al observations. Recent studies have come to contradictory conclusions regarding the spin of this level (0{sup +} or 3{sup +}), with a 3{sup +} assignment implying a large contribution by this level to the {sup 25}Al(p,{gamma}){sup 26}Si reaction rate. We have extended our previous study [Bardayan et al., Phys. Rev. C 65, 032801(R) (2002)] to smaller angles and find the angular distribution of tritons populating the 5.914-MeV level in the {sup 28}Si(p,t){sup 26}Si reaction to be consistent with either a 2{sup +} or 3{sup +} assignment. We have calculated reaction rates under these assumptions and used them in a nova nucleosynthesis model to examine the effects of the remaining uncertainties in the {sup 25}Al(p,{gamma}){sup 26}Si rate on {sup 26}Al production in novae.

Bardayan, D. W.; Blackmon, J. C.; Hix, W. R.; Liang, J. F.; Smith, M. S. [Physics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Howard, J. A.; Kozub, R. L. [Physics Department, Tennessee Technological University, Cookeville, Tennessee 38505 (United States); Brune, C. R. [Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701 (United States); Chae, K. Y. [Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996 (United States); Johnson, M. S. [Oak Ridge Associated Universities, Bldg 6008, P. O. Box 2008, Oak Ridge, Tennessee 37831 (United States); Jones, K. L.; Pain, S. D.; Thomas, J. S. [Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States); Lingerfelt, E. J.; Scott, J. P. [Physics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996 (United States); Livesay, R. J. [Department of Physics, Colorado School of Mines, Golden, Colorado 80401 (United States); Visser, D. W. [Department of Physics and Astronomy, University of North Carolina, Chapel Hill, North Carolina 27599 (United States)

2006-10-15T23:59:59.000Z

238

The role of lattice excitation in Si etching  

E-Print Network [OSTI]

The chemistries of fluorine, F?, and xenon difluoride, XeF?, with clean Si are basically the same, while their chemistries diverge dramatically past I ML F coverage. With a clean Si surface, F? and XeF? react utilizing an ...

Blair, Michael Ryan

2014-01-01T23:59:59.000Z

239

Point Defect Configurations of Supersaturated Au Atoms Inside Si  

E-Print Network [OSTI]

, Dhananjay Kumar,, Sokrates T. Pantelides,,# and Stephen J. Pennycook,# Materials Science and Technology Di, Spain, Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany, and Department of stable silicides in the Au-Si phase diagram suggests growth of clean Si nanowires might be possible

Pennycook, Steve

240

Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate  

SciTech Connect (OSTI)

Patterning pit on Si(001) substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in (105) pits are systematically investigated by solving Schrdinger equation for heavy-hole, which resorts to inhomogeneous strain distribution and nonlinear composition-dependent band parameters. Uniform, partitioned and equilibrium composition profile (CP) in nanoisland and inverted pyramid structure are simulated separately. We demonstrate the huge impact of composition profile on localization of heavy-hole: wave function of ground state is confined near pit facets for uniform CP, at bottom of nanoisland for partitioned CP and at top of nanoisland for equilibrium CP. Moreover, such localization is gradually compromised by the size effect as pit filling ratio or pit size decreases. The results pave the fundamental guideline of designing nanoislands on pit-patterned substrates for desired applications.

Ye, Han, E-mail: Dabombyh@aliyun.com; Yu, Zhongyuan [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, P.R.China (China)

2014-11-15T23:59:59.000Z

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Formation and incorporation of SiF{sub 4} molecules in F-implanted preamorphized Si  

SciTech Connect (OSTI)

The local structure of fluorine incorporated in crystalline silicon following solid phase epitaxial regrowth was investigated by means of x-ray absorption spectroscopy at the F K-edge. We clearly demonstrate that most F is found in SiF{sub 4} molecules in the crystalline matrix. A kinetic pathway, which explains our observation and which is also able to rationalize previous results in a common and coherent framework, is proposed.

De Salvador, D.; Bisognin, G.; Napolitani, E.; Mastromatteo, M.; Baggio, N.; Carnera, A. [MATIS INFM-CNR and Department of Physics, Padova University, via Marzolo 8, 35131 Padova (Italy); Boscherini, F. [Department of Physics and CNISM, Bologna University, viale C. Berti Pichat 6/2, 40127 Bologna (Italy); Impellizzeri, G.; Mirabella, S.; Boninelli, S.; Priolo, F. [MATIS INFM-CNR and Department of Physics and Astronomy, Catania University, via S. Sofia 64, 95123 Catania (Italy); Cristiano, F. [LAAS-CNRS, Toulouse University, 7 av. du Colonel Roche, 31077 Toulouse (France)

2009-09-07T23:59:59.000Z

242

Synthesis of 4-substituted-trans-1,2-diaminocyclohexyl polyaminocarboxylate metal chelating agents for the preparation of stable radiometal antibody immunoconjugates for therapy and spect and pet imaging  

DOE Patents [OSTI]

Cyclohexyl chelating agents useful in forming antibody-metal conjugates useful for diagnostic and therapeutic purposes. New compounds and processes of forming these compounds are disclosed including 4-haloacetamido-trans-1,2-diaminocyclohexyl polyaminocarboxylate and 4-isothiocyanato-trans-1,2-diamino cyclohexane-N, N, N', N'-tetra acetic acid.

Mease, Ronnie C. (2101 B. Ulster Pl., Coram, NY 11727); Kolsky, Kathryn L. (460 Harrison Ave., Miller Pl., NY 11764); Mausner, Leonard F. (16 Seville Ln., Stony Brook, NY 11790); Srivastava, Suresh C. (8 Penelope Dr., Setauket, NY 11733)

1997-06-03T23:59:59.000Z

243

Synthesis of 4-substituted-trans-1,2-diaminocyclohexyl polyaminocarboxylate metal chelating agents for the preparation of stable radiometal antibody immunoconjugates for therapy and SPECT and PET imaging  

DOE Patents [OSTI]

Cyclohexyl chelating agents useful in forming antibody-metal conjugates which are used for diagnostic and therapeutic purposes are synthesized. New compounds and processes of forming these compounds are disclosed including 4-haloacetamido-trans-1,2-diaminocyclohexyl polyaminocarboxylate and 4-isothiocyanato-trans-1,2-diamino cyclohexane-N,N,N{prime},N{prime}-tetra acetic acid.

Mease, R.C.; Kolsky, K.L.; Mausner, L.F.; Srivastava, S.C.

1997-06-03T23:59:59.000Z

244

Hot metal Si control at Kwangyang blast furnaces  

SciTech Connect (OSTI)

Studies of Si transfer in blast furnaces have shown that the Si level in pig iron is influenced more by the reaction of silicon oxide gas generation in the raceway than the chemical reaction between hot metal and slag at the drop zone. Specifications require a Si content of pig iron below 0.15% at the Kwangyang Works, but the use of soft coking coal in the blend for coke ovens, high pulverized coal injection rate into the blast furnace, and the application of lower grade iron ore has resulted in the need to develop methods to control Si in hot metal. In this paper, the results of in furnace Si control and the desiliconization skills at the casthouse floor are described.

Hur, N.S.; Cho, B.R.; Kim, G.Y.; Choi, J.S.; Kim, B.H. [POSCO, Cheollanamdo (Korea, Republic of). Kwangyang Works

1995-12-01T23:59:59.000Z

245

Metal silicide/poly-Si Schottky diodes for uncooled microbolometers  

E-Print Network [OSTI]

Nickel silicide Schottky diodes formed on polycrystalline Si films are proposed as temperature sensors of monolithic uncooled microbolometer IR focal plane arrays. Structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by transmission electron microscopy. The Ni silicide has been identified as two-phase compound with the volume fraction of Ni_2Si:NiSi>~4:1. Two potential barriers (~0.74 and ~0.51 meV) are registered by photo-emf spectroscopy at 80K and attributed to Ni/Si and Ni-silicide/Si interfaces. I-V characteristics of the diodes studied at different temperatures demonstrate temperature coefficients of voltage and current to vary in absolute value from 0.3 to 0.6%/K for forward biased structures and around 2.5%/K for reverse biased ones.

Chizh, K V; Kalinushkin, V P; Resnik, V Ya; Storozhevykh, M S; Yuryev, V A

2013-01-01T23:59:59.000Z

246

Substitutional B in Si: Accurate lattice parameter determination  

SciTech Connect (OSTI)

In this work the lattice deformation induced by substitutional B in Si is carefully determined by using different experimental techniques. The investigated Si{sub 1-x}B{sub x}/Si layers x=(0.0012 divide 0.005) are grown by solid phase epitaxy of B-implanted preamorphized Si and by molecular beam epitaxy. Nuclear reaction analysis both in random and in channeling geometry, secondary ion mass spectrometry and high resolution x-ray diffraction allow to quantify the total amount of B and its lattice location, the B depth profile and the B-doped Si lattice parameter, respectively. The reasons for the large spread present in the data reported so far in literature are discussed. Our results, thanks to the synergy of the earlier techniques, lead to a significantly more accurate strain determination, that is in agreement with very recent ab initio theoretical calculations.

Bisognin, G.; De Salvador, D.; Napolitani, E.; Berti, M.; Carnera, A.; Mirabella, S.; Romano, L.; Grimaldi, M. G.; Priolo, F. [MATIS CNR-INFM and Dipartimento di Fisica, Universita di Padova, via Marzolo 8, 35131 Padova (Italy); MATIS CNR-INFM and Dipartimento di Fisica ed Astronomia, Universita di Catania, via S. Sofia 64, 95123 Catania (Italy)

2007-05-01T23:59:59.000Z

247

Translocation and encapsulation of siRNA inside carbon nanotubes  

E-Print Network [OSTI]

We report spontaneous translocation of small interfering RNA (siRNA) inside carbon nanotubes (CNTs) of various diameters and chirality using all atom molecular dynamics (MD) simulations with explicit solvent. We use Umbrella sampling method to calculate the free energy landscape of the siRNA entry and translocation event. Free energy profiles shows that siRNA gains free energy while translocating inside CNT and barrier for siRNA exit from CNT ranges from 40 to 110 kcal/mol depending on CNT chirality and salt concentration. The translocation time \\tau decreases with the increase of CNT diameter with a critical diameter of 24 \\AA for the translocation. In contrast, double strand DNA (dsDNA) of the same sequence does not translocate inside CNT due to large free energy barrier for the translocation. This study helps in understanding the nucleic acid transport through nanopores at microscopic level and may help designing carbon nanotube based sensor for siRNA.

Santosh Mogurampelly; Prabal K. Maiti

2012-12-11T23:59:59.000Z

248

Mechanistic Selection and Growth of Twinned Bicrystalline Primary Si in Near Eutectic Al-Si Alloys  

SciTech Connect (OSTI)

Morphological evolution and selection of angular primary silicon is investigated in near-eutectic Al-Si alloys. Angular silicon arrays are grown directionally in a Bridgman furnace at velocities in the regime of 10{sup -3} m/sec and with a temperature gradient of 7.5 x 10{sup 3} K/m. Under these conditions, the primary Si phase grows as an array of twinned bicrystalline dendrites, where the twinning gives rise to a characteristic 8-pointed star-shaped primary morphology. While this primary Si remains largely faceted at the growth front, a complex structure of coherent symmetric twin boundaries enables various adjustment mechanisms which operate to optimize the characteristic spacings within the primary array. In the work presented here, this primary silicon growth morphology is examined in detail. In particular, this thesis describes the investigation of: (1) morphological selection of the twinned bicrystalline primary starshape morphology; (2) primary array behavior, including the lateral propagation of the starshape grains and the associated evolution of a strong <100> texture; (3) the detailed structure of the 8-pointed star-shaped primary morphology, including the twin boundary configuration within the central core; (4) the mechanisms of lateral propagation and spacing adjustment during array evolution; and (5) the thermosolutal conditions (i.e. operating state) at the primary growth front, including composition and phase fraction in the vicinity of the primary tip.

Choonho Jung

2006-12-12T23:59:59.000Z

249

Scale Up of Si/Si0.8GE0.2 and B4C/B9C Superlattices for Harvesting...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Scale Up of SiSi0.8GE0.2 and B4CB9C Superlattices for Harvesting of Waste Heat in Diesel Engines Scale Up of SiSi0.8GE0.2 and B4CB9C Superlattices for Harvesting of Waste Heat...

250

Low-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for IIIV Compound Semiconductors-to-Silicon Photonic  

E-Print Network [OSTI]

required temperature for strong covalent bond for- mation and greater diffusion efficiency of gasLow-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for IIIV Compound Semiconductors-temperature process for covalent bonding of thermal SiO2 to plasma-enhanced chemical vapor deposited (PECVD) SiO2

Bowers, John

251

Electromagnetic dissociation of relativistic [sup 28]Si by nucleon emission  

SciTech Connect (OSTI)

A detailed study of the electromagnetic dissociation of [sup 28]Si by nucleon emission at E[sub lab]/A = 14.6 (GeV/nucleon was carried out with [sup 28]Si beams interacting on [sup 208]Pb). [sup 120]Sn. [sup 64]C targets. The measurements apparatus consists of detectors in the target area which measure the energy and charged multiplicity, and a forward spectrometer which measures the position, momentum and energy of the reaction fragments. The exclusive electromagnetic dissociation cross sections for decay channels having multiple nucleons in the final state have been measured which enables the selection of events produced in pure electromagnetic interactions. The measured cross sections agree well with previous measurements obtained for the removal of a few nucleons as well as with measurements on total charge removal cross sections from other experiments. The dependence of the integrated cross sections on the target charge Z[sub T] and the target mass AT confirms that for higher Z targets the excitation is largely electromagnetic. Direct measurements of the excitation energy for the electromagnetic dissociation of [sup 28]Si [yields] p+[sup 27]Al and [sup 28]Si [yields] n+[sup 27]Si have been obtained through a calculation of the invariant mass in kinematically, reconstructed events. The excitation energy spectrum for all targets peak near the isovector giant dipole resonance in [sup 28]Si. These distributions are well reproduced by combining the photon spectrum calculated using the Weizsaecker-Williams approximation with the experimental data on the photonuclear [sup 28]Si([sub [gamma],p])[sup 27]Al and [sup 28]Si([sub [gamma],n])[sup 27]Si. The possibilities of observing double giant dipole resonance excitations in [sup 28]Si have been investigated with cross section measurements as well as with excitation energy reconstruction.

Sonnadara, U.J.

1992-12-01T23:59:59.000Z

252

Electromagnetic dissociation of relativistic {sup 28}Si by nucleon emission  

SciTech Connect (OSTI)

A detailed study of the electromagnetic dissociation of {sup 28}Si by nucleon emission at E{sub lab}/A = 14.6 (GeV/nucleon was carried out with {sup 28}Si beams interacting on {sup 208}Pb). {sup 120}Sn. {sup 64}C targets. The measurements apparatus consists of detectors in the target area which measure the energy and charged multiplicity, and a forward spectrometer which measures the position, momentum and energy of the reaction fragments. The exclusive electromagnetic dissociation cross sections for decay channels having multiple nucleons in the final state have been measured which enables the selection of events produced in pure electromagnetic interactions. The measured cross sections agree well with previous measurements obtained for the removal of a few nucleons as well as with measurements on total charge removal cross sections from other experiments. The dependence of the integrated cross sections on the target charge Z{sub T} and the target mass AT confirms that for higher Z targets the excitation is largely electromagnetic. Direct measurements of the excitation energy for the electromagnetic dissociation of {sup 28}Si {yields} p+{sup 27}Al and {sup 28}Si {yields} n+{sup 27}Si have been obtained through a calculation of the invariant mass in kinematically, reconstructed events. The excitation energy spectrum for all targets peak near the isovector giant dipole resonance in {sup 28}Si. These distributions are well reproduced by combining the photon spectrum calculated using the Weizsaecker-Williams approximation with the experimental data on the photonuclear {sup 28}Si({sub {gamma},p}){sup 27}Al and {sup 28}Si({sub {gamma},n}){sup 27}Si. The possibilities of observing double giant dipole resonance excitations in {sup 28}Si have been investigated with cross section measurements as well as with excitation energy reconstruction.

Sonnadara, U.J.

1992-12-01T23:59:59.000Z

253

Resonant tunneling with high peak to valley current ratio in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers at room temperature  

SciTech Connect (OSTI)

We have investigated carrier transport in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers by room temperature current-voltage measurements. Resonant tunneling signatures accompanied by current peaks are observed. Carrier transport in the multi-layers were analyzed by plots of ln(I/V{sup 2}) as a function of 1/V and ln(I) as a function of V{sup 1/2}. Results suggest that besides films quality, nc-Si and barrier sub-layer thicknesses are important parameters that restrict carrier transport. When thicknesses are both small, direct tunneling dominates carrier transport, resonant tunneling occurs only at certain voltages and multi-resonant tunneling related current peaks can be observed but with peak to valley current ratio (PVCR) values smaller than 1.5. When barrier thickness is increased, trap-related and even high field related tunneling is excited, causing that multi-current peaks cannot be observed clearly, only one current peak with higher PVCR value of 7.7 can be observed. While if the thickness of nc-Si is large enough, quantum confinement is not so strong, a broad current peak with PVCR value as high as 60 can be measured, which may be due to small energy difference between the splitting energy levels in the quantum dots of nc-Si. Size distribution in a wide range may cause un-controllability of the peak voltages.

Chen, D. Y., E-mail: cdy7659@126.com [Department of Physics, Nanjing National Laboratory of Microstructures and Key Laboratory of Advanced Photonic and Electronic, materials, Nanjing University, Nanjing 210093 (China); Nanjing University of posts and Telecommunications, Nanjing 210046 (China); Sun, Y.; He, Y. J. [Nanjing University of posts and Telecommunications, Nanjing 210046 (China); Xu, L.; Xu, J. [Department of Physics, Nanjing National Laboratory of Microstructures and Key Laboratory of Advanced Photonic and Electronic, materials, Nanjing University, Nanjing 210093 (China)

2014-01-28T23:59:59.000Z

254

Size Effect of SiC Particle on Microstructures and Mechanical Properties of SiCp/Al Composites  

E-Print Network [OSTI]

Cp/Al composites were fabricated using aluminum alloy ZL101 as the matrix material, and SiC particles respectively. The results show that the SiC particles can distribute uniformly in the aluminum matrix using matrix or reinforced materials [1-5]. They are promising materials for aerospace, automotive, thermal

Qin, Qinghua

255

SiGe-free strained Si on insulator by wafer bonding and layer transfer T. A. Langdo,a)  

E-Print Network [OSTI]

­8 or Ge condensation during SiGe oxidation.9 In these approaches, the relaxed SGOI layer serves as a ten chemical mechanical polishing step to elimi- nate the surface crosshatch roughness induced by the com a hydrophilic surface preparation treatment, the implanted structure was wafer bonded to an oxidized Si handle

256

Substrate engineering for monolithic integration of III-V semiconductors with Si CMOS technology  

E-Print Network [OSTI]

Ge virtual substrates, fabricated using Si1-xGex-.Ge, compositionally graded buffers, enable the epitaxial growth of device-quality GaAs on Si substrates, but monolithic integration of III-V semiconductors with Si CMOS ...

Dohrman, Carl Lawrence

2008-01-01T23:59:59.000Z

257

Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer  

E-Print Network [OSTI]

We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle ...

Isaacson, David M.

258

a-si solar cells: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

for the development of amorphous Si solar cells Seung May 2010 Keywords: a-Si:H Thin film Si solar cell Spectroscopic ellipsometry (SE) a b s t r a c t We Park, Byungwoo...

259

a-si solar cell: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

for the development of amorphous Si solar cells Seung May 2010 Keywords: a-Si:H Thin film Si solar cell Spectroscopic ellipsometry (SE) a b s t r a c t We Park, Byungwoo...

260

The origin of strength limiting defects in a toughened SiC (hexology SX-SiC)  

SciTech Connect (OSTI)

HEXOLOY{reg_sign} SX-SiC, sintered with yttrium, and aluminum containing compounds has higher toughness and strength than {alpha}-SiC, sintered with boron and carbon (HEXOLOY SA-SiC). The room temperature fracture toughness, and strength in uniaxial tension and flexure were determined. The strength limiting defects were identified. The composition of the strength limiting defects were analyzed by elemental mapping with Scanning Auger Electron Microscopy and Secondary Ion Mass Spectrometry. The origination of such defects are discussed. The fracture mirror parameter was determined from analysis of tensile specimens fracture surfaces. The experimentally determined fracture mirror parameter is compared with the predicted value for SX-SiC and {alpha}-SiC. The local stress state at the vicinity of the defects are discussed.

Srinivasan, G.V.; Gibson, J.; Lau, S.K. [Carborundum Company, Niagara Falls, NY (United States)] [and others

1996-12-31T23:59:59.000Z

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Electron diffraction study of 1M illites with interstratified trans- and cis-vacant 2 : 1 layers  

SciTech Connect (OSTI)

Illites from the volcanogenic Zn-Au-Ag sulfide deposit Galkinskoe (Northern Urals) have been investigated using oblique-texture electron diffraction patterns in combination with the simulation of diffraction effects. Along with single-phase tv/cv1M illites, the structures of which are formed by statistically interstratified dioctahedral 2: 1 layers with vacant trans- or cis-octahedra, illites in the form of a mixture of two interstratified tv/cv1M phases, with the dominance of tv- or cv layers, are identified. It is shown that in the latter case the diffraction pattern can also be interpreted within the single-phase tv/cv model, provided that the tv- and cv layers are distributed with some tendency to segregate. The structural features indicating the preference of the two-phase model are analyzed.

Zhukhlistov, A. P., E-mail: anzhu@igem.ru; Vikent'ev, I. V.; Rusinova, O. V. [Russian Academy of Sciences, Institute of Geology of Ore Deposits, Petrography, Mineralogy, and Geochemistry (Russian Federation)

2012-03-15T23:59:59.000Z

262

IEEE TRANS. AUDIO, SPEECH AND LANGUAGE PROCESSING, VOL. XX, NO. Y, MONTH 2010 1 AR-GARCH in Presence of Noise: Parameter  

E-Print Network [OSTI]

IEEE TRANS. AUDIO, SPEECH AND LANGUAGE PROCESSING, VOL. XX, NO. Y, MONTH 2010 1 AR-GARCH (VAD) based on the autoregressive-generalized autore- gressive conditional heteroscedasticity (AR-GARCH) model. The speech signal is modeled as an AR-GARCH process in the time domain, and the likelihood ratio

Cohen, Israel

263

[177Lu]-Labeled [(R)-2-amino-3-(4-isothiocyanatophenyl)propyl]-trans-(S,S)-cyclohexane-1,2-diamine-pentaacetic acid (CHX-A-  

E-Print Network [OSTI]

[177Lu]-Labeled [(R)-2-amino-3-(4-isothiocyanatophenyl)propyl]- trans-(S,S)-cyclohexane-1,2-diamine Information, NLM, NIH, Bethesda, MD 20894 Chemical name: [177Lu]-Labeled [(R)-2-amino-3 III (EGFRvIII) [ [177Lu]CHX-A''-DTPA-L8A4] Arvind Chopra, PhD National Center for Biotechnology

Levin, Judith G.

264

Corrosion Mechanisms of Mild Steel in Aqueous CO2 SolutionsThu Tran Institute for Corrosion and Multiphase Technology, Ohio University  

E-Print Network [OSTI]

Corrosion Mechanisms of Mild Steel in Aqueous CO2 SolutionsThu Tran Institute for Corrosion," Corrosion Science 41, (1999): pp. 117-139. [2] E. Remita, B. Tribollet, E. Sutter, V. Vivier, F. Ropital contribution of the buffering effect," Corrosion Science 50, (2008): pp. 1433-1440. [3] C. DeWaard and D

Botte, Gerardine G.

265

IEICE TRANS. ELECTRON., VOL.E88C, NO.5 MAY 2005 INVITED PAPER Joint Special Section on Recent Progress in Optoelectronics and Communications  

E-Print Network [OSTI]

990 IEICE TRANS. ELECTRON., VOL.E88­C, NO.5 MAY 2005 INVITED PAPER Joint Special Section on Recent in the range 1530 nm 1603 nm is reviewed. After a short discussion of the relevant fabrication methods 1603 nm. Free running lasers of the Fabry P´erot type, harmonically mode-locked lasers (5 ps/10 GHz), Q

Mohseni, Hooman

266

IEEE Trans. on Reliability, Vol. 58, No. 2, pp. 305-316, June 2009 A Methodology for Determining the Return on Investment Associated with  

E-Print Network [OSTI]

IEEE Trans. on Reliability, Vol. 58, No. 2, pp. 305-316, June 2009 1 A Methodology for Determining, Taoufik Jazouli, and Peter Sandborn, Senior Member, IEEE CALCE Center for Advanced Life Cycle Engineering--Prognostics and Health Management (PHM) provides opportunities for lowering sustainment costs, improving maintenance

Sandborn, Peter

267

Matthew Kam Lessons From Deploying the Remote Transaction System Page 1 of 46 Tu Tran With Three Microfinance Institutions in Uganda  

E-Print Network [OSTI]

Microfinance Institutions in Uganda Lessons From Deploying the Remote Transaction System With Three Microfinance Institutions in Uganda Matthew Kam Department of Electrical Engineering and Computer Sciences Deploying the Remote Transaction System Page 2 of 46 Tu Tran With Three Microfinance Institutions in Uganda

Kam, Matthew

268

Reaction of Elemental Sulfur with a Copper(I) Complex Forming a trans--1,2 End-On Disulfide Complex: New Directions in Copper-Sulfur Chemistry  

E-Print Network [OSTI]

Reaction of Elemental Sulfur with a Copper(I) Complex Forming a trans-µ-1,2 End-On Disulfide Complex: New Directions in Copper-Sulfur Chemistry Matthew E. Helton, Peng Chen, Partha P. Paul, Zolta, investigations into copper-sulfur interactions have been of marked interest in the research fields of copper

Chen, Peng

269

E-Print Network 3.0 - al si fe Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

morphology... -section of a strut showing the microstructure. Dendrites of -Al and eutectic structure of Al-Si with needles of - AlFeSi... . ... Source: Groningen,...

270

Development of an SI DI Ethanol Optimized Flex Fuel Engine Using...  

Broader source: Energy.gov (indexed) [DOE]

Development of an SI DI Ethanol Optimized Flex Fuel Engine Using Advanced Valvetrain Development of an SI DI Ethanol Optimized Flex Fuel Engine Using Advanced Valvetrain...

271

Atomic-Level Computer Simulation of SiC: Defect Accumulation...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Atomic-Level Computer Simulation of SiC: Defect Accumulation, Mechanical Properties and Defect Recovery. Atomic-Level Computer Simulation of SiC: Defect Accumulation, Mechanical...

272

Antibody binding to p-Si using LANL SAM chemistry  

SciTech Connect (OSTI)

This NMSBA-sponsored project involves the attachment of antibodies to polymeric silicon (p-Si) surfaces, with the ultimate goal of attaching antibodies to nanowires for Vista Therapeutics, Inc. (Santa Fe, NM). This presentation describes the functionalization of p-Si surfaces. the activation of terminal carboxylates on these surfaces, the conjugation of antibodies, and the analyses undertaken at each step. The results of this work show that antibody conjugation is possible on p-Si coatings using the well-known EDC/NHS activation chemistry.

Anderson, Aaron S [Los Alamos National Laboratory

2010-12-06T23:59:59.000Z

273

A low thermal impact annealing process for SiO{sub 2}-embedded Si nanocrystals with optimized interface quality  

SciTech Connect (OSTI)

Silicon nanocrystals (Si NCs) for 3rd generation photovoltaics or optoelectronic applications can be produced by several industrially compatible physical or chemical vapor deposition technologies. A major obstacle for the integration into a fabrication process is the typical annealing to form and crystallize these Si quantum dots (QDs) which involves temperatures ?1100??C for 1?h. This standard annealing procedure allows for interface qualities that correspond to more than 95% dangling bond defect free Si NCs. We study the possibilities to use rapid thermal annealing (RTA) and flash lamp annealing to crystallize the Si QDs within seconds or milliseconds at high temperatures. The Si NC interface of such samples exhibits huge dangling bond defect densities which makes them inapplicable for photovoltaics or optoelectronics. However, if the RTA high temperature annealing is combined with a medium temperature inert gas post-annealing and a H{sub 2} passivation, luminescent Si NC fractions of up to 90% can be achieved with a significantly reduced thermal load. A new figure or merit, the relative dopant diffusion length, is introduced as a measure for the impact of a Si NC annealing procedure on doping profiles of device structures.

Hiller, Daniel, E-mail: daniel.hiller@imtek.uni-freiburg.de; Gutsch, Sebastian; Hartel, Andreas M.; Zacharias, Margit [IMTEK, Faculty of Engineering, Albert-Ludwigs-University Freiburg, Georges-Khler-Allee 103, 79110 Freiburg (Germany); Lper, Philipp [Fraunhofer ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Gebel, Thoralf [DTF Technology GmbH, Am Promigberg 16, 01108 Dresden (Germany)

2014-04-07T23:59:59.000Z

274

Atomic-Scale Engineering of the SiC-SiO{sub 2} Interface  

SciTech Connect (OSTI)

We report results from three distinct but related thrusts that aim to elucidate the atomic-scale structure and properties of the Sic-SiO{sub 2} interface. (a) First-principles theoretical calculations probe the global bonding arrangements and the local processes during oxidation; (b) Z-contrast atomic-resolution transmission electron microscopy and electron-energy-loss spectroscopy provide images and interface spectra, and (c) nuclear techniques and electrical measurements are used to profile N at the interface and determine interface trap densities.

Buczko, R.; Chung, G.; Di Ventra, M.; Duscher, G.; Feldman, L.C.; Huang, M.B.; McDonald, K.; Pantelides, S.T.; Pennycook, S.J.; Radtke, C.; Stedile, F.C.; Tin, C.C.; Weller, R.A. Baumvol, I.; Williams, J.R.; Won, J.

1999-11-14T23:59:59.000Z

275

Behavior of Si and C atoms in ion amorphized SiC. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series to someone6 M. Babzien, I. Ben-Zvi, P.2.2 Beamline21Becky ChamberlinSi and

276

Epitaxial growth of rare-earth silicides on (111) Si  

SciTech Connect (OSTI)

Rapid heating with an electron beam has been used to react overlayers of rare-earth (RE) metals with (111) Si, forming epitaxial layers of silicides of Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. Under conventional furnace annealing, forming such silicides on Si typically leads to rough, pitted surfaces. The use of fast beam heating not only results in a much smoother surface topology but also helps promote epitaxial growth on (111) Si in both solid and liquid phase reactions. These epitaxial silicides have a hexagonal RESi/sub approximately1.7/ structure (defected AlB/sub 2/ type). Their orientation with the Si substrate is (0001)parallel(111), with predicted lattice mismatches ranging from +0.83 to -2.55%.

Knapp, J.A.; Picraux, S.T.

1986-02-17T23:59:59.000Z

277

Theoretical investigations of two Si-based spintronic materials  

SciTech Connect (OSTI)

Two Si-based spintronic materials, a Mn-Si digital ferromagnetic heterostructure ({delta}-layer of Mn doped in Si) with defects and dilutely doped Mn{sub x}Si{sub 1-x} alloy are investigated using a density-functional based approach. We model the heterostructure and alloy with a supercell of 64 atoms and examine several configurations of the Mn atoms. We find that 25% substitutional defects without vacancies in the {delta} layer diminishes half metallicity of the DFH substantially. For the alloy, the magnetic moment M ranges from 1.0-9.0 {mu}{sub B}/unit-cell depending on impurity configuration and concentration. Mn impurities introduce a narrow band of localized states near E{sub F}. These alloys are not half metals though their moments are integer. We explain the substantially different magnetic moments.

Fong, C Y; Snow, R; Shaughnessy, M; Pask, J E; Yang, L H

2007-08-03T23:59:59.000Z

278

Radiation hardness of si strip detectors with integrated coupling capacitors  

SciTech Connect (OSTI)

Si strip detectors with integrated coupling capacitors between diode and metallization and with separate bias resistors for each strip have been exposed to ionising radiation. Results from measurements of detector response before and after irradiation are presented.

Dijkstra, H.; Horisberger, R.; Hubbeling, L.; Maehlum, G.; Peisert, A.; Weilhammer, P.; Tuuva, T.; Evensen, L.

1989-02-01T23:59:59.000Z

279

Mechanical properties of amorphous Lix Si alloys: a reactive...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

was downloaded on 08102013 at 15:46 Please note that terms and conditions apply. Mechanical properties of amorphous Li x Si alloys: a reactive force field study View the table...

280

Photovoltaic nanocrystal scintillators hybridized on Si solar cells  

E-Print Network [OSTI]

Photovoltaic nanocrystal scintillators hybridized on Si solar cells for enhanced conversion@bilkent.edu.tr Abstract: We propose and demonstrate semiconductor nanocrystal based photovoltaic scintillators integrated on solar cells to enhance photovoltaic device parameters including spectral responsivity, open circuit

Demir, Hilmi Volkan

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

additive si source: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

x 12,000 or 32,000 km is comparable Stechmann, Samuel N. 45 Polycrystalline silicon thin-film transistor with self-aligned SiGe raised sourcedrain Materials Science Websites...

282

Si Industry at a Crossroads: New Materials or New Factories?  

E-Print Network [OSTI]

Many trends in the silicon industry could be interpreted as the herald of the end of traditional Si scaling. If this premise holds, future performance and system-on-chip applications may not be reached with conventional ...

Fitzgerald, Eugene A.

283

Ge-on-Si laser for silicon photonics  

E-Print Network [OSTI]

Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (<1x109cm-2) and point defects Ge ...

Camacho-Aguilera, Rodolfo Ernesto

2013-01-01T23:59:59.000Z

284

In situ Study of the Formation of Silicide Phases in Amorphous Ni-Si Mixed Layers  

SciTech Connect (OSTI)

In this paper, we investigated Ni silicide phase formation when Si is added within an as deposited 50 nm Ni film. A series of 22 samples with a Si content varying from 0 to 50 at.% was prepared and systematically investigated with in situ x-ray diffraction. The inert oxide substrate was used to identify the phases which first crystallize in an amorphous Ni-Si mixture of a given concentration. The noncongruent silicides Ni{sub 3}Si and Ni{sub 3}Si{sub 2} are never observed to crystallize readily out of the mixture. A remarkable observation is the initial crystallization at low temperature of a hexagonal Ni-silicide, observed over a broad mixed layer composition [35-49%Si]; this hexagonal phase nucleates readily as a single phase [39-47%Si] or together with Ni{sub 2}Si [35-38%Si] or NiSi [49%Si]. This low-temperature phase is related to the high temperature {theta}-phase, but covers a wide composition range up to 47%Si. For the same Ni-Si films deposited on Si(100), the initial nucleation of the Ni(Si) mixture is similar as for the samples deposited on SiO{sub 2}, such that the complex sequence of metal-rich Ni-silicide phases typically observed during Ni/Si reactions is modified. For samples containing more than 21%Si, a simpler sequential phase formation was observed upon annealing. From pole figures, the phase formation sequence was observed to have a significant influence on the texture of the technologically relevant NiSi phase. For mixture composition ranging from 38% to 43%Si, the initial transient {theta}-phase appears extremely textured on Si(100). The observed transient appearance of a hexagonal phase is of importance in understanding the phase formation mechanisms in the Ni-Si system.

Van Bockstael, C.; Detavernier, C; Van Meirhaeghe, R; Jordan-Sweet, J; Lavoie, C

2009-01-01T23:59:59.000Z

285

Impact of SiC Power Electronic Devices for Hybrid Electric Vehicles Leon M. Tolbert1,2  

E-Print Network [OSTI]

02FCC-37 Impact of SiC Power Electronic Devices for Hybrid Electric Vehicles Leon M. Tolbert1 properties of silicon carbide (SiC) power electronic devices compared with silicon (Si) are expected to have characteristics of Si and SiC are used to develop a simulation model for SiC power electronics devices. The main

Tolbert, Leon M.

286

Thermal decomposition of silane to form hydrogenated amorphous Si film  

DOE Patents [OSTI]

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.

Strongin, Myron (Center Moriches, NY); Ghosh, Arup K. (Rocky Point, NY); Wiesmann, Harold J. (Wantagh, NY); Rock, Edward B. (Oxford, GB); Lutz, III, Harry A. (Midlothian, VA)

1980-01-01T23:59:59.000Z

287

Et si c'tait de la dissonance cognitive ?  

E-Print Network [OSTI]

EA 4272 Et si c'était de la dissonance cognitive ? Olivier Brunel (*) Céline Gallen (**) 2010 dissonance cognitive ? 27ème congrès international de l'Association Française de Marketing 18-20 Mai 2011,version1-17Dec2010 #12;2 Et si c'était de la dissonance cognitive ? Résumé Festinger propose en 1957 la

Paris-Sud XI, Université de

288

Detailed arsenic concentration profiles at Si/SiO2 interfaces  

SciTech Connect (OSTI)

The pile-up of arsenic at the Si/SiO2 interface after As implantation and annealing was investigated by high resolution Z-contrast imaging, electron energy-loss spectroscopy EELS, grazing incidence x-ray fluorescence spectroscopy GI-XRF, secondary ion mass spectrometry, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, as well as Hall mobility and four-point probe resistivity measurements. After properly taking into account their respective artifacts, the results of all methods are compatible with each other, with EELS and GI-XRF combined with etching providing similar spatial resolution on the nanometer scale for the dopant profile. The sheet concentration of the piled-up As at the interface was found to be 11015 cm 2 for an implanted dose of 11016 cm 2 with a maximum concentration of 10 at. %. The strain observed in the Z-contrast images also suggests a significant concentration of local distortions within 3 nm from the interface, which, however, do not seem to involve intrinsic point defects.

Pei, Lirong [ORNL; Duscher, G. [University of Tennessee, Knoxville (UTK) & Oak Ridge National Laboratory (ORNL); Steen, Christian [Chair of Electron Devices, University of Erlangen-Nuremberg, Cauerstrasse 6, 91058 Erlangen,; Pichler, Peter [Fraunhofer-Institute, Freiburg, Germany; Ryssel, Heiner [Fraunhofer Institute of Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen; Napolitani, Enrico [MATIS-CNR-INFM and Dipartimento di Fisica, Universit di Padova, via Marzolo 8, 35141 Padova, Italy; De Salvador, Davide [MATIS-CNR-INFM and Dipartimento di Fisica, Universit di Padova, via Marzolo 8, 35141 Padova, Italy; Piro, Alberto [MATIS-CNR-INFM and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64,; Terrasi, Antonio [MATIS-CNR-INFM and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64,

2008-01-01T23:59:59.000Z

289

Boron diffusion in nanocrystalline 3C-SiC  

SciTech Connect (OSTI)

The diffusion of boron in nanocrystalline silicon carbide (nc-SiC) films with a grain size of 47 nm is studied using a poly-Si boron source. Diffusion is found to be much faster than in monocrystalline SiC as it takes place within the grain boundary (GB) network. Drive-in temperatures of 9001000C are suitable for creating shallow boron profiles up to 100?nm deep, while 1100C is sufficient to flood the 200?nm thick films with boron. From the resulting plateau at 1100?C a boron segregation coefficient of 28 between nc-SiC and the Si substrate, as well as a GB boron solubility limit of 0.2?nm{sup ?2} is determined. GB diffusion in the bulk of the films is Fickian and thermally activated with D{sub GB}(T)=(3.1?5.6)10{sup 7}exp(?5.030.16??eV/k{sub B}T) cm{sup 2}s{sup ?1}. The activation energy is interpreted in terms of a trapping mechanism at dangling bonds. Higher boron concentrations are present at the nc-SiC surface and are attributed to immobilized boron.

Schnabel, Manuel, E-mail: manuel.schnabel@ise.fraunhofer.de [Fraunhofer ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Department of Materials, University of Oxford, Parks Rd, Oxford OX1 3PH (United Kingdom); Weiss, Charlotte; Rachow, Thomas; Lper, Philipp; Janz, Stefan [Fraunhofer ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Canino, Mariaconcetta; Summonte, Caterina [CNR-IMM, Via Piero Gobetti 101, 40129 Bologna (Italy); Mirabella, Salvo [CNR-IMM MATIS, Via S. Sofia 64, 95123 Catania (Italy); Wilshaw, Peter R. [Department of Materials, University of Oxford, Parks Rd, Oxford OX1 3PH (United Kingdom)

2014-05-26T23:59:59.000Z

290

Methane Combustion over Pd/ZrO2/SiC, Pd/CeO2/SiC, Pd/Zr0.5Ce0.5O2/SiC Catalysts  

E-Print Network [OSTI]

1 Methane Combustion over Pd/ZrO2/SiC, Pd/CeO2/SiC, Pd/Zr0.5Ce0.5O2/SiC Catalysts Xiaoning Guo a Laboratory of Coal Conversion, Institute of Coal Chemistry, Taiyuan 030001, PR China b GREMI UMR6606 CNRS0.5O2 solid solution) modified Pd/SiC catalysts for methane combustion are studied. XRD and XPS

Paris-Sud XI, Université de

291

European PVSECE Glasgow, Scotland 2000 III-V SPACE SOLAR CELLS ON Si SUBSTRATES USING GRADED GeSi BUFFERS  

E-Print Network [OSTI]

As directly grown on Si, rendering the GaAs useless as a photovoltaic material. Nevertheless, many groups have, this dislocation density has still limited the minority carrier lifetimes obtained to ~ 1-3 ns, even after hydrogen

292

Mechanical characterization of Si-C(O) fiber/SiC (CVI) matrix composites with a BN-interphase  

SciTech Connect (OSTI)

The mechanical behavior of three CVI-processed 2D woven SiC/BN/SiC composite materials with different initial BN interphase thicknesses has been investigated by means of tensile and impact tests. The results have established the efficiency of a BN interphase in promoting a nonlinear/noncatastrophic tensile behavior and high impact resistance. The effect of the initial BN interphase thickness on the resulting mechanical behavior has also been demonstrated. AES and TEM has revealed the presence of a SiO[sub 2]/C double layer at the BN/fiber interface, which might result from a decomposition undergone by the Si-C(O) Nicalon fiber during processing. It has been suggested that the influence of the initial BN interphase thickness on the mechanical properties of the composites results from both changes occurring in the composition and morphology of the interfacial zones and modifications of the interfacial forces due to accommodation of the radial residual clamping stress.

Prouhet, S.; Camus, G.; Labrugere, C.; Guette, A. (Lab. des Composites Thermostructuraux, Pessac (France)); Martin, E. (Univ. de Bordeaux, Talence (France). Lab. de Genie Mechanique de l'IUT A)

1994-03-01T23:59:59.000Z

293

E-Print Network 3.0 - al-low si transformation Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

-ICR Si NO C2H4 Si FT-ICR Si 6Tesla ICR ICR SWIFT (Stored Waveform Inversed Fourier Transform) Ar (1 10... FT-ICR Si NO C2H4 1. 2. 1 2 1,2 Chemical reaction of Silicon clusters...

294

Posting type Advisory Subject S interference in XRF determination of Si  

E-Print Network [OSTI]

Posting type Advisory Subject S interference in XRF determination of Si Module/Species A/ Si Sites information The primary XRF peak for sulfur has a shoulder that overlaps the primary XRF peak for silicon. XRF spectra for two samples with differing S/Si ratios. Accurate determination of Si is difficult when

Fischer, Emily V.

295

Epitaxy of Nanocrystalline Silicon Carbide on Si(111) at Room Temperature  

E-Print Network [OSTI]

Epitaxy of Nanocrystalline Silicon Carbide on Si(111) at Room Temperature Roberto Verucchi carbide (SiC) has unique chemical, physical, and mechanical properties. A factor strongly limiting Si or plastics that cannot withstand high temperatures. Silicon carbide (SiC) has unique properties that make

Alfè, Dario

296

Effects of Silicon Carbide (SiC) Power Devices on HEV PWM Inverter Losses*  

E-Print Network [OSTI]

Effects of Silicon Carbide (SiC) Power Devices on HEV PWM Inverter Losses* Burak Ozpineci1,3 burak and Education Oak Ridge, TN 37831-0117 Abstract-The emergence of silicon carbide- (SiC-) based power, silicon carbide (SiC) with its superior properties compared with Si, is a good candidate to be used

Tolbert, Leon M.

297

Structural and optical properties of {beta}-FeSi{sub 2}/Si(100) prepared by laser ablation method  

SciTech Connect (OSTI)

{beta}-FeSi{sub 2} is a promising material for the application of various electronic, optoelectronic and energy devices. The authors present here the semiconducting properties of {beta}-FeSi{sub 2} films on Si(100) substrate prepared by laser ablation method. Samples were grown using poly-crystalline bulk {beta}-FeSi{sub 2} prepared by horizontal gradient freeze method. For the monitoring of growth, in-situ observation of ablation plume was made through fluorescence spectroscopy. Reflection of high-energy electron beam diffraction (RHEED) was also made in-situ to see the surface morphology. Characterization of the films by X-ray diffraction presented purely {beta}(220) orientation. Raman scattering measurements at room temperature also indicated that the grown films are semiconducting {beta}-FeSi{sub 2}. Optical absorption spectra at room temperature showed absorption coefficient higher than 10{sup 5} cm{sup {minus}1} above the band-gap ({approximately}1.2 eV). It was revealed that high quality semiconducting {beta}-FeSi{sub 2} films can be fabricated by laser ablation method without post-annealing.

Kakemoto, H.; Makita, Y.; Obara, A.; Tsai, Y.; Sakuragi, S.; Ando, S.; Tsukamoto, T.

1997-07-01T23:59:59.000Z

298

Hydrogen intercalation of single and multiple layer graphene synthesized on Si-terminated SiC(0001) surface  

SciTech Connect (OSTI)

Ab initio density functional theory simulations were used to investigate the influence of hydrogen intercalation on the electronic properties of single and multiple graphene layers deposited on the SiC(0001) surface (Si-face). It is shown that single carbon layer, known as a buffer layer, covalently bound to the SiC substrate, is liberated after hydrogen intercalation, showing characteristic Dirac cones in the band structure. This is in agreement with the results of angle resolved photoelectron spectroscopy measurements of hydrogen intercalation of SiC-graphene samples. In contrast to that hydrogen intercalation has limited impact on the multiple sheet graphene, deposited on Si-terminated SiC surface. The covalently bound buffer layer is liberated attaining its graphene like structure and dispersion relation typical for multilayer graphene. Nevertheless, before and after intercalation, the four layer graphene preserved the following dispersion relations in the vicinity of K point: linear for (AAAA) stacking, direct parabolic for Bernal (ABAB) stacking and wizard hat parabolic for rhombohedral (ABCA) stacking.

So?tys, Jakub; Piechota, Jacek; Ptasinska, Maria [Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawi?skiego 5a, 02-106 Warsaw (Poland); Krukowski, Stanis?aw, E-mail: stach@unipress.waw.pl [Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawi?skiego 5a, 02-106 Warsaw (Poland); Institute of High Pressure Physics, Polish Academy of Sciences, Soko?owska 29/37, 01-142 Warsaw (Poland)

2014-08-28T23:59:59.000Z

299

High-temperature phase stability and tribological properties of laser clad Mo{sub 2}Ni{sub 3}Si/NiSi metal silicide coatings  

SciTech Connect (OSTI)

Mo{sub 2}Ni{sub 3}Si/NiSi wear-resistant metal silicide composite coatings consisting of Mo{sub 2}Ni{sub 3}Si primary dendrite and interdendritic Mo{sub 2}Ni{sub 3}Si/NiSi eutectic were fabricated on substrate of an austenitic stainless steel AISI321 by laser cladding using Ni-Mo-Si elemental powder blends. The high-temperature structural stability of the coating was evaluated by aging at 800 deg. C for 1-50 h. High-temperature sliding wear resistance of the as-laser clad and aged coatings was evaluated at 600 deg. C. Results indicate that the Mo{sub 2}Ni{sub 3}Si/NiSi metal silicides coating has excellent high temperature phase stability. No phase transformation except the dissolution of the eutectic Mo{sub 2}Ni{sub 3}Si and the corresponding growth of the Mo{sub 2}Ni{sub 3}Si primary dendrite and no elemental diffusion from the coating into the substrate were detected after aging the coating at 800 deg. C for 50 h. Aging of the coating at 800 deg. C leads to gradual dissolution of the interdendritic eutectic Mo{sub 2}Ni{sub 3}Si and subsequent formation of a dual-phase structure with equiaxed Mo{sub 2}Ni{sub 3}Si primary grains distributed in the NiSi single-phase matrix. Because of the strong covalent-dominated atomic bonds and high volume fraction of the ternary metal silicide Mo{sub 2}Ni{sub 3}Si, both the original and the aged Mo{sub 2}Ni{sub 3}Si/NiSi coating has excellent wear resistance under pin-on-disc high-temperature sliding wear test conditions, although hardness of the aged coating is slightly lower than that of the as-clad coating.

Lu, X.D. [Laboratory of Laser Materials Processing and Surface Engineering, School of Materials Science and Engineering, Beihang University (China); Wang, H.M. [Laboratory of Laser Materials Processing and Surface Engineering, School of Materials Science and Engineering, Beihang University (China)]. E-mail: wanghuaming@263.net

2004-10-18T23:59:59.000Z

300

The effect of carbon on the valence band offset of compressively strained Si1 x yGexCy/(100) Si heterojunctions  

E-Print Network [OSTI]

The effect of carbon on the valence band offset of compressively strained Si1 x yGexCy/(100) Si Capacitance­voltage measurements have been used to study the effect of carbon on the valence band offset with substitutional C levels from 0% to 2.5%. The valence band offset between Si1 x yGexCy and unstrained 100 Si

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301

6522 J. Am. Chem. SOC.1986, 108, 6522-6529 Photoelectron Spectroscopy of SiH3-and SiD3-  

E-Print Network [OSTI]

- is found to be 94.5' while the value for the radical, SiH,, is 112.5'. Using the gas-phaseacidity of SiH4 questions about these early SiH3assignments. The chem- istry of silanes (and SiH, itself) in a fast flow reactor has been summarizedz6and a recent review of the photochemistry of silanes (1) Gaspar, P. P

Ellison, Barney

302

La France et l'Iran, des nations si lointaines et si proches 197 La France et l'Iran, des nations  

E-Print Network [OSTI]

La France et l'Iran, des nations si lointaines et si proches 197 La France et l'Iran, des nations si lointaines et si proches Le recteur Gérard-François DUMONT* La France et l'Iran apparaissent comme'autre. Pour les Français, comme sans doute pour les autres Européens, penser ce pays asiatique qu'est l'Iran

Paris-Sud XI, Université de

303

Predicting Static Losses in an Inverter-Leg built with SiC Normally-Off JFETs and SiC diodes  

E-Print Network [OSTI]

Predicting Static Losses in an Inverter-Leg built with SiC Normally-Off JFETs and SiC diodes Xavier details the methodology of a method to calculate static losses in an inverter leg built with SiC Normally model with a constant current. The proposed method is applied to a three phase inverter to evaluate

Paris-Sud XI, Université de

304

Strained-Si1-xGex/Si Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior  

E-Print Network [OSTI]

Strained pseudomorphic Si/Si [subscript 1-x]Ge [subscript x]/Si gate-controlled band-to-band tunneling (BTBT) devices have been analyzed with varying Ge composition up to 57% and p+ tunnel-junction (source) doping concentration ...

Antoniadis, Dimitri A.

305

Bonding Structure of Phenylacetylene on Hydrogen-Terminated Si(111) and Si(100): Surface Photoelectron Spectroscopy Analysis and Ab Initio Calculations  

SciTech Connect (OSTI)

Interfaces between phenylacetylene (PA) monolayers and two silicon surfaces, Si(111) and Si(100), are probed by X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy, and the results are analyzed using ab initio molecular orbital calculations. The monolayer systems are prepared via the surface hydrosilylation reaction between PA and hydrogen-terminated silicon surfaces. The following spectral features are obtained for both of the PA-Si(111) and PA-Si(100) systems: a broad {pi}-{pi}* shakeup peak at 292 eV (XPS), a broad first ionization peak at 3.8 eV (UPS), and a low-energy C 1s {yields} {pi}* resonance peak at 284.3 eV (NEXAFS). These findings are ascribed to a styrene-like {pi}-conjugated molecular structure at the PA-Si interface by comparing the experimental data with theoretical analysis results. A conclusion is drawn that the vinyl group can keep its {pi}-conjugation character on the hydrogen-terminated Si(100) [H:Si(100)] surface composed of the dihydride (SiH{sub 2}) groups as well as on hydrogen-terminated Si(111) having the monohydride (SiH) group. The formation mechanism of the PA-Si(100) interface is investigated within cluster ab initio calculations, and the possible structure of the H:Si(100) surface is discussed based on available data.

M Kondo; T Mates; D Fischer; F Wudl; E Kramer

2011-12-31T23:59:59.000Z

306

First-principles study of the interfacial adhesion between SiO2 and MoSi2 D. E. Jiang1 and Emily A. Carter2  

E-Print Network [OSTI]

the energy efficiency and per- formance of gas turbine engines requires structural materials able to operate on MoSi2, a potential high-temperature coating material for metals. This silica scale protects MoSi2 the potential of MoSi2 as a high-temperature structural material and coating. DOI: 10.1103/PhysRevB.72

Carter, Emily A.

307

Research on microwave joining of SiC  

SciTech Connect (OSTI)

Results: identification of optimum joining temperature range for reaction bonded Si carbide at 1420-1500 C; demonstration that specimens joined within this range have fracture roughness greater than as-received material; and demonstration of ability to use SiC formed in situ from the decomposition of polycarbosilane as a joining aid for sintered Si carbide. In the latter case, the interlayer material was also shown to fill any pores in the joining specimens near the interlayer. Together with the demonstration of leaktight joints between tube sections of reaction bonded and sintered SiC under the previous contract, these results provide the foundation for scaleup to joining of the larger and longer tubes needed for radiant burner and heat exchanger tube assemblies. The formation of SiC in situ is important because maintaining roundness of these large tubes is a technical challenge for the tube manufacturer, so that formation of a leaktight joint may require some degree of gap filling.

Silberglitt, R. [FM Technologies, Inc., Fairfax Station, VA (United States)

1995-07-31T23:59:59.000Z

308

Joining SI3N4 for Advanced Turbomachinery Applications  

SciTech Connect (OSTI)

The main objective of this project was to develop reliable, low-cost techniques for joining silicon nitride (Si{sub 3}N{sub 4}) to itself and to metals. For Si{sub 3}N{sub 4} to be widely used in advanced turbomachinery applications, joining techniques must be developed that are reliable, cost-effective, and manufacturable. This project addressed those needs by developing and testing two Si{sub 3}N{sub 4} joining systems; oxynitride glass joining materials and high temperature braze alloys. Extensive measurements were also made of the mechanical properties and oxidation resistance of the braze materials. Finite element models were used to predict the magnitudes and positions of the stresses in the ceramic regions of ceramic-to-metal joints sleeve and butt joints, similar to the geometries used for stator assemblies.

GLASS, S. JILL; LOEHMAN, RONALD E.; HOSKING, F. MICHAEL; STEPHENS JR., JOHN J.; VIANCO, PAUL T.; NEILSEN, MICHAEL K.; WALKER, CHARLES A.; POLLINGER, J.P.; MAHONEY, F.M.; QUILLEN, B.G.

2000-07-01T23:59:59.000Z

309

Silicon (100)/SiO2 by XPS  

SciTech Connect (OSTI)

Silicon (100) wafers are ubiquitous in microfabrication and, accordingly, their surface characteristics are important. Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al K radiation. Survey scans show that the material is primarily silicon and oxygen, and the Si 2p region shows two peaks that correspond to elemental silicon and silicon dioxide. Using these peaks the thickness of the native oxide (SiO2) was estimated using the equation of Strohmeier.1 The oxygen peak is symmetric. The material shows small amounts of carbon, fluorine, and nitrogen contamination. These silicon wafers are used as the base material for subsequent growth of templated carbon nanotubes.

Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

2013-09-25T23:59:59.000Z

310

The precipitation sequence in Al-Mg-Si alloys  

SciTech Connect (OSTI)

Fine-scale precipitation that occurs during age hardening of Al alloy 6061 has been studied using differential scanning calorimetry (DSC), atom probe field ion microscopy (APFIM) and transmission electron microscopy (TEM). It was found that the precipitation sequence is: independent clusters of Mg and Si atoms {yields} co-clusters that contain Mg and Si atoms {yields} small precipitates of unknown structure {yields} {beta}{double_prime} needle-shaped precipitates {yields} B{prime} lath-shaped precipitates and {beta}{prime} rod-shaped precipitates. A new structure is proposed for the {beta}{double_prime} precipitate. It was found that the Mg:Si ratio in the intermediate precipitates and co-clusters was close to 1:1.

Edwards, G.A.; Dunlop, G.L. [Univ. of Queensland, Brisbane, Queensland (Australia)] [Univ. of Queensland, Brisbane, Queensland (Australia); Stiller, K. [Chalmers Univ. of Technology, Gothenburg (Sweden)] [Chalmers Univ. of Technology, Gothenburg (Sweden); Couper, M.J. [Comalco Research Centre, Thomastown, Victoria (Australia)] [Comalco Research Centre, Thomastown, Victoria (Australia)

1998-07-01T23:59:59.000Z

311

Studying the magnetic properties of CoSi single crystals  

SciTech Connect (OSTI)

The magnetic properties of CoSi single crystals have been measured in a range of temperatures T = 5.5-450 K and magnetic field strengths H {<=} 11 kOe. A comparison of the results for crystals grown in various laboratories allowed the temperature dependence of magnetic susceptibility {chi}(T) = M(T)/H to be determined for a hypothetical 'ideal' (free of magnetic impurities and defects) CoSi crystal. The susceptibility of this ideal crystal in the entire temperature range exhibits a diamagnetic character. The {chi}(T) value significantly increases in absolute value with decreasing temperature and exhibits saturation at the lowest temperatures studied. For real CoSi crystals of four types, paramagnetic contributions to the susceptibility have been evaluated and nonlinear (with respect to the field) contributions to the magnetization have been separated and taken into account in the calculations of {chi}(T).

Narozhnyi, V. N., E-mail: narozhnyivn@gmail.com; Krasnorussky, V. N. [Russian Academy of Sciences, Vereshchagin Institute for High Pressure Physics (Russian Federation)

2013-05-15T23:59:59.000Z

312

Unraveling siRNA Unzipping Kinetics with Graphene  

E-Print Network [OSTI]

Using all atom molecular dynamics simulations, we report spontaneous unzipping and strong binding of small interfering RNA (siRNA) on graphene. Our dispersion corrected density functional theory based calculations suggest that nucleosides of RNA have stronger attractive interactions with graphene as compared to DNA residues. These stronger interactions force the double stranded siRNA to spontaneously unzip and bind to the graphene surface. Unzipping always nucleates at one end of the siRNA and propagates to the other end after few base-pairs get unzipped. While both the ends get unzipped, the middle part remains in double stranded form because of torsional constraint. Unzipping probability distributions fitted to single exponential function give unzipping time (t) of the order of few nanoseconds which decrease exponentially with temperature. From the temperature variation of unzipping time we estimate the energy barrier to unzipping.

Santosh Mogurampelly; Swati Panigrahi; Dhananjay Bhattacharyya; A. K. Sood; Prabal K. Maiti

2012-07-19T23:59:59.000Z

313

Modeling of implantation and mixing damage during etching of SiO{sub 2} over Si in fluorocarbon plasmas  

SciTech Connect (OSTI)

Energetic ion bombardment during plasma etching of microelectronics devices is necessary to activate chemical process and define features through the ions' anisotropic trajectories. These energetic fluxes can also cause damage and mixing of the constituents of crystalline lattices. These properties are likely best modeled using molecular dynamics (MD) simulations. The computational expense of these techniques makes feature scale simulations difficult, and so motivates development of approximate methods that can be used to model full features. In this regard, an implantation and mixing model has been developed and implemented into a Monte Carlo feature profile model to simulate the mixing and damage to the underlying Si during high aspect ratio (HAR) etching of SiO{sub 2} trenches. Fluxes to the surface were provided by a reactor scale model. The feature scale model was validated by comparison to the mixing produced by Ar{sup +} bombardment of Si with and without F and CF fluxes as predicted by MD simulations. Scaling of mixing damage of underlying Si during HAR of SiO{sub 2} etching in Ar/C{sub 4}F{sub 8}/O{sub 2} plasmas for rf bias powers of 1-4 kW was investigated. The authors found that mixing damage at the bottom of HAR features, though increasing in magnitude with increasing ion energy, does not scale as dramatically as on flat surfaces. This is due to the reflection of ions off of sidewalls which moderate the ion energies.

Wang Mingmei; Kushner, Mark J. [Department of Chemical and Biological Engineering, Iowa State University, Ames, Iowa 50010 (United States); Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

2011-09-15T23:59:59.000Z

314

Synthesis of SiO{sub 2}/?-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition  

SciTech Connect (OSTI)

?-SiC thin films were synthesized directly on graphite by hot filament chemical vapor deposition at low temperature. SiH{sub 4} diluted in hydrogen was employed as the silicon source, while graphite was functioned as both substrate and carbon source for the as-grown ?-SiC films. X-ray diffraction and Fourier transform infrared analysis indicate that SiO{sub 2}/?-SiC/graphite hybrid composite was formed after post annealing treatment, and its crystalline quality can be remarkably improved under optimized annealing conditions. The possible growth mechanism was proposed based on in situ etching of graphite by reactive hydrogen radicals at the atomic level.

Zhang, Zhikun; Bi, Kaifeng; Liu, Yanhong; Qin, Fuwen; Liu, Hongzhu [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)] [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Bian, Jiming, E-mail: jmbian@dlut.edu.cn [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050 (China); Zhang, Dong [New Energy Source Research Center of Shenyang Institute of Engineering, Shengyang 110136 (China)] [New Energy Source Research Center of Shenyang Institute of Engineering, Shengyang 110136 (China); Miao, Lihua [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Department of Computer and Mathematical Basic Teaching, Shenyang Medical College, Shenyan 110034 (China)

2013-11-18T23:59:59.000Z

315

SiC Processing AG | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty Ltd Jump to: navigation,Pvt LtdShrub Oak, New York: Energy ResourcesSiSiC

316

SiG Solar GmbH | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty Ltd Jump to: navigation,Pvt LtdShrub Oak, New York: Energy ResourcesSiSiCSiG

317

Neutron activation analysis of the 30Si content of highly enriched 28Si: proof of concept and estimation of the achievable uncertainty  

E-Print Network [OSTI]

We investigated the use of neutron activation to estimate the 30Si mole fraction of the ultra-pure silicon material highly enriched in 28Si for the measurement of the Avogadro constant. Specifically, we developed a relative method based on Instrumental Neutron Activation Analysis and using a natural-Si sample as a standard. To evaluate the achievable uncertainty, we irradiated a 6 g sample of a natural-Si material and modeled experimentally the signal that would be produced by a sample of the 28Si-enriched material of similar mass and subjected to the same measurement conditions. The extrapolation of the expected uncertainty from the experimental data indicates that a measurement of the 30Si mole fraction of the 28Si-enriched material might reach a 4% relative combined standard uncertainty.

D'Agostino, Giancarlo; Oddone, Massimo; Prata, Michele; Bergamaschi, Luigi; Giordani, Laura

2014-01-01T23:59:59.000Z

318

Lithium diffusion at Si-C interfaces in Silicon-Graphene composites  

SciTech Connect (OSTI)

Models of intercalated Li and its diffusion in Si-Graphene interfaces are investigated using Density Functional Theory. Results suggest that the presence of interfaces alters the energetics of Li binding and diffusion significantly compared to bare Si or Graphene surfaces. Our results show that cavities along reconstructed Si surface provide diffusion paths for Li. Diffusion barriers calculated along these cavities are significantly lower than penetration barriers to bulk Si. Interaction with Si surface results in graphene defects, creating Li diffusion paths that are confined along the cavities but have still lower barrier than in bulk Si.

Odbadrakh, Khorgolkhuu [ORNL; McNutt, Nichiolas William [University of Tennessee, Knoxville (UTK); Nicholson, Donald M. [Oak Ridge National Laboratory (ORNL); Rios, Orlando [ORNL; Keffer, David J. [University of Tennessee, Knoxville (UTK)

2014-01-01T23:59:59.000Z

319

Lithium diffusion at Si-C interfaces in silicon-graphene composites  

SciTech Connect (OSTI)

Models of intercalated Li and its diffusion in Si-Graphene interfaces are investigated using density functional theory. Results suggest that the presence of interfaces alters the energetics of Li binding and diffusion significantly compared to bare Si or Graphene surfaces. Our results show that cavities along reconstructed Si surface provide diffusion paths for Li. Diffusion barriers calculated along these cavities are significantly lower than penetration barriers to bulk Si. Interaction with Si surface results in graphene defects, creating Li diffusion paths that are confined along the cavities but have still lower barrier than in bulk Si.

Odbadrakh, Khorgolkhuu [Joint Institute for Computational Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States); McNutt, N. W. [Department of Chemical and Biomolecular Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States); Nicholson, D. M. [Computational Science and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States); Department of Physics, University of North Carolina, Asheville, North Carolina 28804 (United States); Rios, O. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States); Keffer, D. J. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States)

2014-08-04T23:59:59.000Z

320

Growth of crystalline X-Sic on Si at reduced temperatures by chemical vapor deposition from `silacycllobutane  

E-Print Network [OSTI]

, and TPS resulted in single crystal layer" on Si ( 111) only up to a thickness of 2000 h;. Highly orientedGrowth of crystalline X-Sic on Si at reduced temperatures by chemical vapor deposition from grown by SCB at a temperature of 800 "C. The progress of SiC/Si heterojunction devices has been C3HsSiH2

Steckl, Andrew J.

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous SiO2 Zhong-Yi Lu,1  

E-Print Network [OSTI]

Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous SiO2 Zhong-Yi Lu,1 C. J vacancies in SiO2 have long been regarded as bistable, forming a Si-Si dimer when neutral and a puckered configuration when positively charged. We report first-principles calculations of O vacancies in amorphous SiO2

Pantelides, Sokrates T.

322

Role of oxygen vacancy in HfO{sub 2}/SiO{sub 2}/Si(100) interfaces  

SciTech Connect (OSTI)

We have investigated the interface states in HfO{sub 2}/SiO{sub 2}/Si(100) systems that were prepared by using the in situ pulsed laser deposition technique. X-ray photoelectron spectroscopy data revealed that when the HfO{sub 2} film thickness exceeds 11 A, the film composition undergoes a systematic change from Hf silicate to oxygen-deficient HfO{sub x<2}. Furthermore, we determined that the evolution of the interface states clearly depends on the oxygen condition applied during the film growth and that the oxygen vacancy is an important parameter for Hf silicate formation.

Cho, Deok-Yong; Oh, S.-J.; Chang, Y.J.; Noh, T.W.; Jung, Ranju; Lee, Jae-Cheol [CSCMR and School of Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); ReCOE and School of Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); Samsung Advanced Institute of Technology, Suwon 440-900 (Korea, Republic of)

2006-05-08T23:59:59.000Z

323

Graeber et al. 2014 1 Supporting Information (SI Appendix)  

E-Print Network [OSTI]

Graeber et al. 2014 1 Supporting Information (SI Appendix) Graeber et al. (2014) - www for the temperature- and gibberellin-dependent control of seed germination Kai Graeber, Ada Linkies, Tina Steinbrecher17 and WT #12;Graeber et al. 2014 2 Supplementary Methods Genome Size Analysis by Flow Cytometry

Chittka, Lars

324

NUCLEATION PHENOMENON IN SiC PARTICULATE REINFORCED MAGNESIUM COMPOSITE  

E-Print Network [OSTI]

NUCLEATION PHENOMENON IN SiC PARTICULATE REINFORCED MAGNESIUM COMPOSITE Y. Cai, D. Taplin, M.J. Tan performance of matrix metals and alloys. Most magnesium alloy based MMCs are produced via a casting process into the last freezing interdendritic regions. For magnesium based composites, both particle pushing (or capture

Zhou, Wei

325

A Peltier cooling system for SiPM temperature stabilization  

E-Print Network [OSTI]

A Peltier cooling system for SiPM temperature stabilization von Simon Nieswand Bachelorarbeit auen thermisch isolierten Kupferblockes einzulassen, an welchen ein Peltier-Element angebracht wird. Um das System zu automatisieren, werden der Temperatursensor und die Stromquelle des Peltier- Elements

Hebbeker, Thomas

326

Superconductivity in gallium-substituted Ba8Si46 clathrates  

E-Print Network [OSTI]

superconductor, with an onset at T-C approximate to 3.3 K. For x=10 and higher, no superconductivity was observed down to T=1.8 K. This represents a strong suppression of superconductivity with increasing Ga content, compared to Ba8Si46 with T-C approximate to 8...

Li, Yang; Zhang, Ruihong; Liu, Yang; Chen, Ning; Luo, Z. P.; Ma, Xingqiao; Cao, Guohui; Feng, Z. S.; Hu, Chia-Ren; Ross, Joseph H., Jr.

2007-01-01T23:59:59.000Z

327

Monte Carlo Simulations of Thermal Conductivity in Nanoporous Si Membranes  

E-Print Network [OSTI]

candidates for thermoelectric materials as they can provide extremely low thermal conductivity , relatively of boundary scattering on the thermal conductivity. We show that the material porosity strongly affects1 Monte Carlo Simulations of Thermal Conductivity in Nanoporous Si Membranes Stefanie Wolf1

328

Resorption Rate Tunable Bioceramic: Si, Zn-Modified Tricalcium Phosphate  

SciTech Connect (OSTI)

This dissertation is organized in an alternate format. Several manuscripts which have already been published or are to be submitted for publication have been included as separate chapters. Chapter 1 is a general introduction which describes the dissertation organization and introduces the human bone and ceramic materials as bone substitute. Chapter 2 is the background and literature review on dissolution behavior of calcium phosphate, and discussion of motivation for this research. Chapter 3 is a manuscript entitled ''Si,Zn-modified tricalcium phosphate: a phase composition and crystal structure study'', which was published in ''Key Engineering Materials'' [1]. Chapter 4 gives more crystal structure details by neutron powder diffraction, which identifies the position for Si and Zn substitution and explains the stabilization mechanism of the structure. A manuscript entitled ''Crystal structure analysis of Si, Zn-modified Tricalcium phosphate by Neutron Powder Diffraction'' will be submitted to Biomaterials [2]. Chapter 5 is a manuscript, entitled ''Dissolution behavior and cytotoxicity test of Si, Zn-modified tricalcium phosphate'', which is to be submitted to Biomaterials [3]. This paper discusses the additives effect on the dissolution behavior of TCP, and cytotoxicity test result is also included. Chapter 6 is the study of hydrolysis process of {alpha}-tricalcium phosphate in the simulated body fluid, and the phase development during drying process is discussed. A manuscript entitled ''Hydrolysis of {alpha}-tricalcium phosphate in simulated body fluid and phase transformation during drying process'' is to be submitted to Biomaterials [4]. Ozan Ugurlu is included as co-authors in these two papers due to his TEM contributions. Appendix A is the general introduction of the materials synthesis, crystal structure and preliminary dissolution result. A manuscript entitled ''Resorption rate tunable bioceramic: Si and Zn-modified tricalcium phosphate'' was published in Ceramic Engineering and Science Proceedings (the 29th International Conference on Advanced Ceramics and Composites - Advances in Bioceramics and Biocomposites) [5].

Xiang Wei

2006-08-09T23:59:59.000Z

329

A thermodynamic model for hydrous silicate melts in the system NaAlSi3O8KAlSi3O8Si4O8H2O  

E-Print Network [OSTI]

A thermodynamic model for hydrous silicate melts in the system NaAlSi3O8­KAlSi3O8­Si4O8­H2O Marcus ­ remplacé par UMR6113 - ISTO Abstract Computation of crystal­liquid equilibria in hydrous silicate systems system. Author Keywords: Haplogranite system; Hydrous silicate melt; Liquidus phase equilibria; Linear

Paris-Sud XI, Université de

330

Positron annihilation studies of the AlO{sub x}/SiO{sub 2}/Si interface in solar cell structures  

SciTech Connect (OSTI)

Film and film/substrate interface characteristics of 30 and 60 nm-thick AlO{sub x} films grown on Si substrates by thermal atomic layer deposition (ALD), and 30 nm-thick AlO{sub x} films by sputtering, have been probed using variable-energy positron annihilation spectroscopy (VEPAS) and Doppler-broadened spectra ratio curves. All samples were found to have an interface which traps positrons, with annealing increasing this trapping response, regardless of growth method. Thermal ALD creates an AlO{sub x}/SiO{sub x}/Si interface with positron trapping and annihilation occurring in the Si side of the SiO{sub x}/Si boundary. An induced positive charge in the Si next to the interface reduces diffusion into the oxides and increases annihilation in the Si. In this region there is a divacancy-type response (20 {+-} 2%) before annealing which is increased to 47 {+-} 2% after annealing. Sputtering seems to not produce samples with this same electrostatic shielding; instead, positron trapping occurs directly in the SiO{sub x} interface in the as-deposited sample, and the positron response to it increases after annealing as an SiO{sub 2} layer is formed. Annealing the film has the effect of lowering the film oxygen response in all film types. Compared to other structural characterization techniques, VEPAS shows larger sensitivity to differences in film preparation method and between as-deposited and annealed samples.

Edwardson, C. J.; Coleman, P. G. [Department of Physics, University of Bath, Bath BA2 7AY (United Kingdom); Li, T.-T. A.; Cuevas, A. [College of Engineering and Computer Science, Australian National University, Canberra, ACT 0200 (Australia); Ruffell, S. [Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 (Australia)

2012-03-01T23:59:59.000Z

331

Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO{sub 2} gate dielectrics  

SciTech Connect (OSTI)

We present a detailed investigation on positive-bias temperature stress (PBTS) induced degradation of nitrided hafnium silicate (HfSiON)/SiO{sub 2} gate stack in n{sup +}-poly crystalline silicon (polySi) gate p-type metal-oxide-semiconductor (pMOS) devices. The measurement results indicate that gate dielectric degradation is a composite effect of electron trapping in as-fabricated as well as newly generated neutral traps, resulting a significant amount of stress-induced leakage current and generation of surface states at the Si/SiO{sub 2} interface. Although, a significant amount of interface states are created during PBTS, the threshold voltage (V{sub T}) instability of the HfSiON based pMOS devices is primarily caused by electron trapping and detrapping. It is also shown that PBTS creates both acceptor- and donor-like interface traps via different depassivation mechanisms of the Si{sub 3}???SiH bonds at the Si/SiO{sub 2} interface in pMOS devices. However, the number of donor-like interface traps ?N{sub it}{sup D} is significantly greater than that of acceptor-like interface traps ?N{sup A}{sub it}, resulting the PBTS induced net interface traps as donor-like.

Samanta, Piyas, E-mail: piyas@vcfw.org [Department of Physics, Vidyasagar College for Women, 39 Sankar Ghosh Lane, Kolkata 700 006 (India); Huang, Heng-Sheng; Chen, Shuang-Yuan [Institute of Mechatronic Engineering, National Taipei University of Technology, No. 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan (China); Liu, Chuan-Hsi [Department of Mechatronic Technology, National Taiwan Normal University, No. 162, Sec. 1, He-Ping E. Rd., Taipei 106, Taiwan (China); Cheng, Li-Wei [Central R and D Division, United Microelectronics Corporation, No. 3, Li-Hsin Rd. II, Hsinchu 300, Taiwan (China)

2014-02-21T23:59:59.000Z

332

Axial Ge/Si nanowire heterostructure tunnel FETs.  

SciTech Connect (OSTI)

Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx}20{sup o} off the <111> axis at about 300 nm away from the Ge/Si interface. This provides a natural marker for placing the gate contact electrodes and gate metal at appropriate location for desired high-on current and reduced ambipolarity as shown in Fig. 2. The 1D heterostructures allow band-edge engineering in the transport direction, not easily accessible in planar devices, providing an additional degree of freedom for designing tunnel FETs (TFETs). For instance, a Ge tunnel source can be used for efficient electron/hole tunneling and a Si drain can be used for reduced back-tunneling and ambipolar behavior. Interface abruptness on the other hand (particularly for doping) imposes challenges in these structures and others for realizing high performance TFETs in p-i-n junctions. Since the metal-semiconductor contacts provide a sharp interface with band-edge control, we use properly designed Schottky contacts (aided by 3D Silvaco simulations) as the tunnel barriers both at the source and drain and utilize the asymmetry in the Ge/Si channel bandgap to reduce ambipolar transport behavior generally observed in TFETs. Fig. 3 shows the room-temperature transfer curves of a Ge/Si heterostructure TFET (H-TFET) for different V{sub DS} values showing a maximum on-current of {approx}7 {micro}A, {approx}170 mV/decade inverse subthreshold slope and 5 orders of magnitude I{sub on}/I{sub off} ratios for all V{sub DS} biases considered here. This high on-current value is {approx}1750 X higher than that obtained with Si p-i-n{sup +} NW TFETs and {approx}35 X higher than that obtained with CNT TFET. The I{sub on}/I{sub off} ratio and inverse subthreshold slope compare favorably to that of Si {approx} 10{sup 3} I{sub on}/I{sub off} and {approx} 800 mV/decade SS{sup -1} but lags behind those of CNT TFET due to poor PECVD nitride gate oxide quality ({var_epsilon}{sub r} {approx} 3-4). The asymmetry in the Schottky barrier heights used here eliminates the stringent requirements of abrupt doped interfaces used in p-i-n based TFETs, which is hard to achieve both in thin-film and

Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

2010-03-01T23:59:59.000Z

333

Forsterite [Mg2SiO4)] Carbonation in Wet Supercritical CO2: An...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Forsterite Mg2SiO4) Carbonation in Wet Supercritical CO2: An in situ High Pressure X-Ray Diffraction Study. Forsterite Mg2SiO4) Carbonation in Wet Supercritical CO2: An in situ...

334

Over-Current Protection Scheme for SiC Power MOSFET DC Circuit Breaker  

E-Print Network [OSTI]

V. Radun, SiC based solid state power controller, in 23tha solid-state circuit breaker based on SiC power MOSFET withSolid-state DC circuit breakers made of the modern wide bandgap power

Zhang, Yuan; Liang, Yung C.

2015-01-01T23:59:59.000Z

335

A Ge-on-Si laser for electronic-photonic integration  

E-Print Network [OSTI]

We demonstrate room temperature photoluminescence and optical gain from the direct band gap transition of tensile strained n-type Ge-on-Si around 1600 nm, which can be applied to a Si-based laser for optical interconnects ...

Sun, Xiaochen

336

Direct-gap optical gain of Ge on Si at room temperature  

E-Print Network [OSTI]

Lasers on Si are crucial components of monolithic electronicphotonic integration. Recently our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible with Si complementary metal oxide semiconductor ...

Liu, Jifeng

337

E-Print Network 3.0 - al si alloys Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SiGe alloys to high-speed devices and circuits is given... , however, development in the growth tech- nology of high-quality SiGe ... Source: Rieh, Jae-Sung - School of Electrical...

338

Photoemission study of the Si(111)/Gd interface: A comparison with the bulk silicides  

SciTech Connect (OSTI)

Synchrotron-radiation photoemission data from the Si(111)/Gd interface (Si 2p/Gd 4 f core levels and valence states) are compared with those from all of the silicides in the Si--Gd phase diagram (Gd/sub 3/Si/sub 5/, GdSi, Gd/sub 5/Si/sub 3/) measured in strictly comparable conditions. It is shown that the first silicide-like reaction product is formed for a Gd coverage of about 2 monolayers and that this interface silicide-like product is correlated with GdSi. These results are also discussed in connection with the Si(111)/Yb interface where the same experimental approach shows a correlation between the first silicide-like interface product and the metal-rich silicide.

Puppin, E.; Nogami, J.; Carbone, C.; Shen, Z.X.; Lindau, I.; Pate, B.B.; Abbati, I.; Braicovich, L.

1987-07-01T23:59:59.000Z

339

au-coated si influence: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and analysis of lateral SiC N-emitter SiGe P-base Schottky metal-collector (NPM) HBT on SOI Engineering Websites Summary: on SOI M. Jagadesh Kumar *, C. Linga Reddy...

340

PID Failure of c-Si and Thin-Film Modules and Possible Correlation...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

PID Failure of c-Si and Thin-Film Modules and Possible Correlation with Leakage Currents PID Failure of c-Si and Thin-Film Modules and Possible Correlation with Leakage Currents...

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Characterization of Defects in N-type 4H-SiC After High-Energy...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Characterization of Defects in N-type 4H-SiC After High-Energy N Ion Implantation by RBS-Channeling and Raman Spectroscopy. Characterization of Defects in N-type 4H-SiC After...

342

Ethanol synthesis from syngas over Rh-based/SiO2 catalysts: A...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

over Rh-basedSiO2 catalysts: A combined experimental and theoretical modeling study. Ethanol synthesis from syngas over Rh-basedSiO2 catalysts: A combined experimental and...

343

ESS 2012 Peer Review - 15 kV Phase Leg Power Modules with SiC...  

Broader source: Energy.gov (indexed) [DOE]

1 Click to edit Master title style 15 kV Phase Leg Power Modules with SiC MIDSJT Devices Ranbir Singh and Siddarth Sundaresan GeneSiC Semiconductor Inc. ranbir.singh@genesicsemi.co...

344

Chemical Bonding In Amorphous Si Coated-carbon Nanotube As Anodes...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Bonding In Amorphous Si Coated-carbon Nanotube As Anodes For Li ion Batteries: A XANES Study. Chemical Bonding In Amorphous Si Coated-carbon Nanotube As Anodes For Li ion...

345

Investigation of Local Environments in Nafion-SiO2 Composite...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Local Environments in Nafion-SiO2 Composite Membranes used in Vanadium Redox Flow Batteries. Investigation of Local Environments in Nafion-SiO2 Composite Membranes used in Vanadium...

346

Identification and characterization of receptor-specific peptides for siRNA delivery  

E-Print Network [OSTI]

Tumor-targeted delivery of siRNA remains a major barrier in fully realizing the therapeutic potential of RNA interference. While cell-penetrating peptides (CPP) are promising siRNA carrier candidates, they are universal ...

Ren, Yin

347

Computational models with thermodynamic and composition features improve siRNA design  

E-Print Network [OSTI]

Background: Small interfering RNAs (siRNAs) have become an important tool in cell and molecular biology. Reliable design of siRNA molecules is essential for the needs of large functional genomics projects. Results: To ...

Shabalina, Svetlana A.

348

PID-free C-Si PV Module Using Novel Chemically-Tempered Glass...  

Broader source: Energy.gov (indexed) [DOE]

PID-free C-Si PV Module Using Novel Chemically-Tempered Glass PID-free C-Si PV Module Using Novel Chemically-Tempered Glass Presented at the PV Module Reliability Workshop,...

349

Lipid-Modified Aminoglycoside Derivatives for In Vivo siRNA Delivery  

E-Print Network [OSTI]

Rationally designed siRNA delivery materials that are enabled by lipid-modified aminoglycosides are demonstrated. Leading materials identified are able to self-assemble with siRNA into well-defined nanoparticles and induce ...

Zhang, Yunlong

350

SiO2 Fracture: Chemomechanics with a Machine Learning Hybrid...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SiO2 Fracture: Chemomechanics with a Machine Learning Hybrid QMMM Scheme SiO2 Fracture: Chemomechanics with a Machine Learning Hybrid QMMM Scheme. Close-up of a crack tip in a...

351

Exploring the specificity and mechanisms of siRNA-mediated gene silencing in mammalian cells  

E-Print Network [OSTI]

Complementary short interfering RNAs (siRNAs) are routinely used to knockdown gene expression. siRNAs bind to their target sequence and guide transcript cleavage and subsequent degradation. This type of silencing is ...

Alemn, Lourdes Maria

2008-01-01T23:59:59.000Z

352

E-Print Network 3.0 - a-si alloy solar Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

1m intrinsic a-Si:H layers were... intrinsic a-Si:H layer and the metal film. For the solar cell test, the light is coming from the bottom... through structure innovations....

353

E-Print Network 3.0 - aptamer-functionalized si-nanowire fet...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

, single-crystalline Si nanowires can serve as alternative semiconducting materials for nano-FET-based 0956... .4. Fabrication of Si nanowire field-effect transistors Both n-type...

354

Annealing Simulations of Nano-Sized Amorphous Structures in SiC...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Simulations of Nano-Sized Amorphous Structures in SiC. Annealing Simulations of Nano-Sized Amorphous Structures in SiC. Abstract: A two-dimensional model of a nano-sized amorphous...

355

Hollow Core-Shell Structured Porous Si-C Nanocomposites for Li...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Hollow Core-Shell Structured Porous Si-C Nanocomposites for Li-Ion Battery Anodes. Hollow Core-Shell Structured Porous Si-C Nanocomposites for Li-Ion Battery Anodes. Abstract:...

356

Fuel Consumption and NOx Trade-offs on a Port-Fuel-Injected SI...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Consumption and NOx Trade-offs on a Port-Fuel-Injected SI Gasoline Engine Equipped with a Lean-NOx Trap Fuel Consumption and NOx Trade-offs on a Port-Fuel-Injected SI Gasoline...

357

Isotopic Ratios of SiC of Type X and Si 3 This appendix contains the isotopic data for 81 presolar SiC grains of type X and six preso  

E-Print Network [OSTI]

for 81 presolar SiC grains of type X and six preso­ lar Si 3 N 4 grains, all found by ion imaging (see C 14 N/ 15 N CN \\Gamma /C \\Gamma 26 Al/ 27 Al KJG6L­103­1 SiC ­420 \\Sigma 4 ­480 \\Sigma 8 40.4 +0:7 \\Gamma0:7 55.3 +3:1 \\Gamma2:8 0.124 \\Delta \\Delta \\Delta KJG6L­105­1 SiC ­277 \\Sigma 11 ­404 \\Sigma 9 289

Nittler, Larry R.

358

Oxidation mechanisms and kinetics of 1D-SiC/C/SiC composite materials; 1: An experimental approach  

SciTech Connect (OSTI)

The oxidation of unidirectional SiC/C/SiC model composites has been investigated through thermogravimetric analysis, optical/electron microscopy, and electrical measurements. The influence of temperature and carbon interphase thickness on the oxidation of the composites is discussed. The oxidation involves three phenomena: (1) reaction of oxygen with the carbon interphase resulting in pores around the fibers, (2) diffusion of oxygen and carbon oxides along the pores, and (3) reaction of oxygen with the pore walls leading to the growth of silica layers on both the fibers and matrix. In composites with a thin carbon interphase treated at T > 1,000 C the pores are rapidly sealed by silica. Under such conditions, the oxidation damages are limited to the vicinity of the external surface and the materials exhibit a self-healing character. Conversely, long exposures at 900 C give rise to the formation of microcracks in the matrix related to mechanical stresses arising from the in situ SiC/SiO[sub 2] conversion. Finally, the self-heating character is not observed in composites with a thick interphase since carbon is totally consumed before silica can seal the pores.

Filipuzzi, L.; Camus, G.; Naslain, R. (Domaine Univ., Pessac (France). Lab. des Composites Thermostructuraux); Thebault, J. (Societe Europeenne de Propulsion, Saint Medard en Jalles (France))

1994-02-01T23:59:59.000Z

359

N-AND P-TYPE SiGe/Si SUPERLATTICE COOLERS Xiaofeng Fan, Gehong Zeng, Edward Croke  

E-Print Network [OSTI]

thermoelectric material for high temperature applications. In this paper the fabrication and characterization to solve some of these problems. SiGe is a good thermoelectric material for high temperature refrigeration electrically in series and thermally in parallel, similar to conventional thermoelectric devices, and thus

360

Development of Solar Grade Silicon (SoG-Si) Feedstock by Recycling SoG-Si Wastes  

SciTech Connect (OSTI)

Experiment results of EM separation show that the non-metallic inclusions were successfully pushed to the boundary layer of the crucible under EM force. Larger frequency and smaller current generate smaller thickness of accumulated inclusions. More detailed EM separation experiments are undergoing to investigate the factors that affect the removal efficient of inclusions from SoG-Si

Lifeng Zhang; Anping Dong; Lucas Nana Wiredu Damoah

2013-01-24T23:59:59.000Z

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Role of Si/Al Ratio on Immobilization and Stability of Rhodium Complexes on ZSM-5  

E-Print Network [OSTI]

Rhodium complexes within the pores of zeolite ZSM-5 with varying Si/Al ratios (Si/Al 23, Si/Al 50, and Si/Al 280) were prepared from Rh1+(CO)2(C5H7O2), Rh22+(CO2CH3)4, and Rh3+(C5H7O2)3 followed by thermal treatment in He. IR results indicate...

Long, Brandon

2009-01-01T23:59:59.000Z

362

Effect of Al on the sharpness of the MgSiO3 perovskite to post-perovskite phase transition  

E-Print Network [OSTI]

Effect of Al on the sharpness of the MgSiO3 perovskite to post-perovskite phase transition S. Akber the influence of Al on the recently discovered perovskite to post-perovskite phase transition in MgSiO3. We examine three substitution mechanisms for Al in the two structures: MgSi ! AlAl; SiSiO ! AlAl5; and Si

Steinle-Neumann, Gerd

363

Impact of surface morphology of Si substrate on performance of Si/ZnO heterojunction devices grown by atomic layer deposition technique  

SciTech Connect (OSTI)

In this paper, the authors have investigated the structural, optical, and electrical characteristics of silicon nanowire (SiNW)/zinc oxide (ZnO) coreshell nanostructure heterojunctions and compared their characteristics with Si/ZnO planar heterojunctions to investigate the effect of surface morphology of Si substrate in the characteristics of Si/ZnO heterojunction devices. In this work, ZnO thin film was conformally deposited on both p-type ?100? planar Si substrate and substrate with vertically aligned SiNW arrays by atomic layer deposition (ALD) method. The x-ray diffraction spectra show that the crystalline structures of Si/ZnO heterojunctions are having (101) preferred orientation, whereas vertically oriented SiNW/ZnO coreshell heterojunctions are having (002)-oriented wurtzite crystalline structures. The photoluminescence (PL) spectra of Si/ZnO heterojunctions show a very sharp single peak at 377?nm, corresponding to the bandgap of ZnO material with no other defect peaks in visible region; hence, these devices can have applications only in UV region. On the other hand, SiNW/ZnO heterojunctions are having band-edge peak at 378?nm along with a broad emission band, spreading almost throughout the entire visible region with a peak around 550?nm. Therefore, ALD-grown SiNW/ZnO heterojunctions can emit green and red light simultaneously. Reflectivity measurement of the heterojunctions further confirms the enhancement of visible region peak in the PL spectra of SiNW/ZnO heterojunctions, as the surface of the SiNW/ZnO heterojunctions exhibits extremely low reflectance (<3%) in the visible wavelength region compared to Si/ZnO heterojunctions (>20%). The currentvoltage characteristics of both Si/ZnO and SiNW/ZnO heterojunctions are measured with large area ohmic contacts on top and bottom of the structure to compare the electrical characteristics of the devices. Due to large surface to-volume ratio of SiNW/ZnO coreshell heterojunction devices, the output current rating is about 130 times larger compared to their planar version at 2 V forward bias voltage. This higher output current rating can be exploited for fabricating high-performance nanoelectronic and optoelectronic devices in near future.

Hazra, Purnima; Singh, Satyendra Kumar [Department of Electronics and Communication Engineering, Motilal Neheru National Institute of Technology, Allahabad 211004 (India); Jit, Satyabrata, E-mail: sjit.ece@itbhu.ac.in [Department of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi 221005 (India)

2015-01-01T23:59:59.000Z

364

Fern (Notholaena sinuata, var. Crenata) Poisoning in Sheep, Goats and Cattle : The So-Called "Jimmies" of the Trans-Pecos.  

E-Print Network [OSTI]

corresponding number of sheep but the loss is never severe. The goat appears to be more conscious of approaching danger and when the symptoms appear can not be forced to continue ~valking. It is probably this ability of the goat to take care of itself rather...TEXAS AGRICULTURAL EXPERIMENT STATION A. B. CONNER, DIRECTOR College Station, Texas BULLETIN NO. 611 APRIL 1942 FERN (NOTHOLAENA SINUATA, var. Crenata) POISONING IN SHEEP, GOATS, AND CATTLE-THE SO-CALLED "JIMMIES" OF THE TRANS-PECOS FRANK P...

Mathews, Frank P. (Frank Patrick)

1942-01-01T23:59:59.000Z

365

PID-free C-Si PV Module Using Novel Chemically-Tempered Glass  

Broader source: Energy.gov (indexed) [DOE]

to an order of magnitude higher is seen near the surface. P. Hacke et al. WCPEC-5 (2010, Spain), 3760. SIMS p-type, mono-Si 180 um n + -Si AR(SiN) Fig. 5. Na and N depth profiles...

366

Magnetic properties and switching volumes of nanocrystalline SmFeSiC films  

SciTech Connect (OSTI)

Systematic studies of the effects of Si addition on the magnetic and magnetization reversal properties of SmFeSiC films are presented. The magnetic switching volume and other magnetic parameters (e.g., coercivity) are strongly dependent upon the Si content. Correlations between switching volume, coercivity, and the intergrain interactions are discussed. {copyright} {ital 1997 American Institute of Physics.}

Zhang, S.Y. [State Key Laboratory of Magnetism, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, Peoples Republic of (China)] [State Key Laboratory of Magnetism, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, Peoples Republic of (China); Shan, Z.S.; Liu, Y. [Center for Materials Research and Analysis, University of Nebraska, Lincoln, Nebraska 68588-0113 (United States)] [Center for Materials Research and Analysis, University of Nebraska, Lincoln, Nebraska 68588-0113 (United States); Zhao, T.Y.; Zhao, J.G.; Shen, B.G.; Zhan, W.S. [Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, Peoples Republic of (China)] [Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, Peoples Republic of (China); Sellmyer, D.J. [Center for Materials Research and Analysis, University of Nebraska, Lincoln, Nebraska 68588-0113 (United States)] [Center for Materials Research and Analysis, University of Nebraska, Lincoln, Nebraska 68588-0113 (United States)

1997-04-01T23:59:59.000Z

367

Fig. 1: Schematic of the optoelectronic switch. Source/drain and channel regions formed in Si.  

E-Print Network [OSTI]

Si Ge E-field Fig. 1: Schematic of the optoelectronic switch. Source/drain and channel regions (z) energy Novel Si-based CMOS Optoelectronic Switching Device Operating in the Near Infrared Ali K, high performance optoelectronic switch is introduced. The device is a Si- MOSFET with Ge gate that can

Miller, David A. B.

368

Impact of SiC Devices on Hybrid Electric and Plug-in Hybrid Electric Vehicles  

E-Print Network [OSTI]

Impact of SiC Devices on Hybrid Electric and Plug-in Hybrid Electric Vehicles Hui Zhang1 , Leon M -- The application of SiC devices (as battery interface, motor controller, etc.) in a hybrid electric vehicle (HEV, vehicle simulation software). Power loss models of a SiC inverter are incorporated into PSAT powertrain

Tolbert, Leon M.

369

Mechanical Properties of 3C-SiC Films for MEMS Applications Jayadeep Deva Reddy1  

E-Print Network [OSTI]

. A detailed study of the mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si substrates was performed by means of nanoindentation using a Berkovich diamond tip. The thickness of both the single and polycrystalline SiC films was around 1-2 m. Under indentation loads below 500 N both films

Volinsky, Alex A.

370

Leakage current and dielectric breakdown behavior in annealed SiO2 aerogel films  

E-Print Network [OSTI]

Leakage current and dielectric breakdown behavior in annealed SiO2 aerogel films Moon-Ho Jo behavior in annealed SiO2 aerogel films for intermetal dielectric applications was investigated in a metal­insulator­semiconductor structure. SiO2 aerogel films with porosities of 70% exhibited Poole­Frenkel conduction both before

Jo, Moon-Ho

371

Theoretical analysis of Si1xyGexCy near-infrared photodetectors  

E-Print Network [OSTI]

Theoretical analysis of Si1?x?yGexCy near-infrared photodetectors Baojun Li Zhongshan (Sun Yat and Engineering Cambridge, Massachusetts 02139 Abstract. A near-infrared waveguide photodetector in a Si-based ter, especially for SiGe with a high Ge fraction. To obtain sufficient absorption at near-infrared wavelengths

372

Electro-thermal Simulations of Strained-Si MOSFETs under ESD conditions  

E-Print Network [OSTI]

that of bulk-Si [1,2]) causes severe self-heating, considerably changing some electrical properties of strained-Si is of technological importance. In this work, electrical and thermal characteristics with bulk-Si devices by injecting the Human Body Model (HBM) and Machine Model (MM) ESD stress [3]. 2

Dutton, Robert W.

373

Recycling and Uptake of Si(OH)4 when Protozoan Grazers Feed on Diatoms  

E-Print Network [OSTI]

1 Recycling and Uptake of Si(OH)4 when Protozoan Grazers Feed on Diatoms Sabine Schultesa,1 on Si(OH)4 recycling was investigated with cultures of single- celled diatoms, Thalassiosira pseudonana in discarded feeding vacuoles. Over the first 24h, microzooplankton grazing even led to enhanced uptake of Si

Paris-Sud XI, Universit de

374

Optical gain from the direct gap transition of Ge-on-Si at room temperature  

E-Print Network [OSTI]

We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.

Liu, Jifeng

375

Intrinsic device-to-device variation in graphene field-effect transistors on a Si/SiO{sub 2} substrate as a platform for discriminative gas sensing  

SciTech Connect (OSTI)

Arrays of nearly identical graphene devices on Si/SiO{sub 2} exhibit a substantial device-to-device variation, even in case of a high-quality chemical vapor deposition (CVD) or mechanically exfoliated graphene. We propose that such device-to-device variation could provide a platform for highly selective multisensor electronic olfactory systems. We fabricated a multielectrode array of CVD graphene devices on a Si/SiO{sub 2} substrate and demonstrated that the diversity of these devices is sufficient to reliably discriminate different short-chain alcohols: methanol, ethanol, and isopropanol. The diversity of graphene devices on Si/SiO{sub 2} could possibly be used to construct similar multisensor systems trained to recognize other analytes as well.

Lipatov, Alexey [Department of Chemistry, University of NebraskaLincoln, Lincoln, Nebraska 68588 (United States); Varezhnikov, Alexey; Sysoev, Victor [Department of Physics, Saratov State Technical University, Saratov 410054 (Russian Federation); Augustin, Martin; Sommer, Martin [Institute of Microstructure Technology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Bruns, Michael [Institute for Applied Materials - Energy Storage Systems (IAM-ESS), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Kolmakov, Andrei, E-mail: andrei.kolmakov@nist.gov [Department of Physics, Southern Illinois University, Carbondale, Illinois 62901 (United States); Sinitskii, Alexander, E-mail: sinitskii@unl.edu [Department of Chemistry, University of NebraskaLincoln, Lincoln, Nebraska 68588 (United States); Nebraska Center for Materials and Nanoscience, University of NebraskaLincoln, Lincoln, Nebraska 68588 (United States)

2014-01-06T23:59:59.000Z

376

Effects of filament-matrix interfaces on the mechanical properties of SiC-reinforced Si sub 3 N sub 4: A Review  

SciTech Connect (OSTI)

This report summarizes the results of a literature review of the effects of filament-matrix interfaces on the mechanical properties of ceramic composites composed of SiC-filament-reinforced Si{sub 3}N{sub 4}. A general review of the processing and mechanical properties of SiC-filament-reinforced Si{sub 3}N{sub 4} is presented with special emphasis on research pertaining to processing-related effects on filament-matrix interfaces and the resulting effects of these interfaces on fracture behavior. A review of coating techniques for ceramic filaments is also presented, and recommendations are made for future directions in processing SiC-filament-reinforced Si{sub 3}N{sub 4} with mechanical properties that are enhanced by the microstructure of the filament-matrix interface. 148 refs., 1 tab.

Schilling, C.H.

1989-09-01T23:59:59.000Z

377

Mechanism of power consumption inhibitive multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure resistance random access memory  

SciTech Connect (OSTI)

In this paper, multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure is introduced to reduce the operation power consumption of resistive random access memory (RRAM) device by modifying the filament formation process. And the configuration of multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure is confirmed and demonstrated by auger electron spectrum. Material analysis together with conduction current fitting is applied to qualitatively evaluate the carrier conduction mechanism on both low resistance state and high resistance state. Finally, single layer and multilayer conduction models are proposed, respectively, to clarify the corresponding conduction characteristics of two types of RRAM devices.

Zhang, Rui; Lou, Jen-Chung [School of Software and Microelectronics, Peking University, Beijing 100871 (China); Tsai, Tsung-Ming, E-mail: tmtsai@faculty.nsysu.edu.tw, E-mail: tcchang@mail.phys.nsysu.edu.tw; Chang, Kuan-Chang; Huang, Syuan-Yong; Shih, Chih-Cheng; Pan, Jhih-Hong; Tung, Cheng-Wei [Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Chang, Ting-Chang, E-mail: tmtsai@faculty.nsysu.edu.tw, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan 700, Taiwan (China); Chen, Kai-Huang [Department of Electronics Engineering and Computer Science, Tung-Fang Design Institute, Kaohsiung, Taiwan (China); Young, Tai-Fa; Chen, Hsin-Lu [Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chen, Jung-Hui [Department of Chemistry, National Kaohsiung Normal University, Kaohsiung, Taiwan (China); Chen, Min-Chen; Syu, Yong-En [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Sze, Simon M. [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)

2013-12-21T23:59:59.000Z

378

Forsterite film formation and grain growth in 3% Si steel  

SciTech Connect (OSTI)

The forsterite film in 3% Si steel is formed by a solid state reaction of the annealing separator, MgO, with SiO[sub 2] that results from the reduction of the fayalite layer in the hydrogen atmosphere in the high temperature anneal. In this work, secondary recrystallization was about complete at 1,000 C. After that temperature tertiary recrystallization can occur if the boundary drag of the second phase particles can be overcome. Addition of phosphates to the annealing separator affects the morphology of the forsterite film and can have an important effect on tertiary recrystallization by affecting the rate of decrease of the boundary-drag and/or the surface energy relationship.

Cunha, M.A.; Cesar, M.G.M.M. (Cia Acos Especiais Itabira, Timoteo (Brazil))

1994-11-01T23:59:59.000Z

379

Multi-Layer Inkjet Printed Contacts to Si  

SciTech Connect (OSTI)

Ag, Cu, and Ni metallizations were inkjet printed with near vacuum deposition quality. The approach developed can be easily extended to other conductors such as Pt, Pd, Au, etc. Thick highly conducting lines of Ag and Cu demonstrating good adhesion to glass, Si, and printed circuit board (PCB) have been printed at 100-200 deg C in air and N2 respectively. Ag grids were inkjet-printed on Si solar cells and fired through the silicon nitride AR layer at 850 deg C, resulting in 8% cells. Next generation inks, including an ink that etches silicon nitride, have now been developed. Multi-layer inkjet printing of the etching ink followed by Ag ink produced contacts under milder conditions and gave solar cells with efficiencies as high as 12%.

Curtis, C. J.; van Hest, M.; Miedaner, A.; Kaydanova, T.; Smith, L.; Ginley, D. S.

2005-11-01T23:59:59.000Z

380

Axial Ge/Si nanowire heterostructure tunnel FETs  

SciTech Connect (OSTI)

The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

Picraux, Sanuel T [Los Alamos National Laboratory; Daych, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

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381

Ge/Si core/multi shell heterostructure FETs  

SciTech Connect (OSTI)

Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.

Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

382

Surface Crystallization in a Liquid AuSi Alloy  

SciTech Connect (OSTI)

X-ray measurements reveal a crystalline monolayer at the surface of the eutectic liquid Au{sub 82}Si{sub 18}, at temperatures above the alloy's melting point. Surface-induced atomic layering, the hallmark of liquid metals, is also found below the crystalline monolayer. The layering depth, however, is threefold greater than that of all liquid metals studied to date. The crystallinity of the surface monolayer is notable, considering that AuSi does not form stable bulk crystalline phases at any concentration and temperature and that no crystalline surface phase has been detected thus far in any pure liquid metal or nondilute alloy. These results are discussed in relation to recently suggested models of amorphous alloys.

Shpyrko,O.; Streitel, R.; Balagurusamy, V.; Grigoriev, A.; Deutsch, M.; Ocko, B.; Meron, M.; Lin, B.; Pershan, P.

2006-01-01T23:59:59.000Z

383

SiO MASERS IN ASYMMETRIC MIRAS. II. R CANCRI  

SciTech Connect (OSTI)

This is the second paper in a series of multi-epoch observations of the SiO masers at 7 mm wavelength in several asymptotic giant branch stars from a sample of Mira variable stars showing evidence of asymmetric structure in the infrared. These stars have been observed interferometrically in the infrared by the Infrared Optical Telescope Array and with Very Long Baseline Array measurements of the SiO masers. In this paper, we present the observations of R Cancri (R Cnc). The systemic velocity of R Cnc is estimated to be 15.8 {+-} 0.2 km s{sup -1}. A comparison is made with the model calculations of Gray et al. which predict some but not all observed features.

Cotton, W. D. [National Radio Astronomy Observatory, 520 Edgemont Road, Charlottesville, VA 22903-2475 (United States); Ragland, S. [W. M. Keck Observatory, 65-1120 Mamalahoa Hwy, Kamuela, HI 96743 (United States); Pluzhnik, E. A. [NASA, Ames Research Center, Moffett Field, CA 94035 (United States); Danchi, W. C. [NASA Goddard Space Flight Center, Exoplanets and Stellar Astrophysics, Code 667, Greenbelt, MD 20771 (United States); Traub, W. A. [Jet Propulsion Laboratory, California Institute of Technology, M/S 301-451, 4800 Oak Grove Drive, Pasadena, CA 91109 (United States); Willson, L. A. [Department of Physics and Astronomy, Iowa State University, Ames, IA 50014 (United States); Lacasse, M. G. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States)], E-mail: bcotton@nrao.edu

2009-12-01T23:59:59.000Z

384

Fractographic investigation of flaws in sintered SiC fiber  

SciTech Connect (OSTI)

The Carborundum Company has developed a continuous process to produce multifilament, polycrystalline SiC fiber tow. The process uses a melt spinning approach to make the green fibers wherein the submicron SiC powder is mixed with polymers and the resulting compound is melt spun and extruded through a spinnerette. After extraction, the green fibers are sintered in a continuous sintering line. The properties of this fiber are given. This paper will describe the use of fractography in directing the fiber developmental efforts, specifically on characterization of strength-limiting defects and their origination. Fractographic analysis is also extended to determining strength of fibers at any gauge length and in identifying artifacts associated with the tensile strength testing technique.

Srinivasan, G.V.; Venkateswaran, V. [Carborundum Company, Niagara Falls, NY (United States)

1996-12-31T23:59:59.000Z

385

Systematic Study of the Effect of La2O3 Incorporation on the Flatband Voltage and Si Band Bending in the TiN/HfO2 /SiO2 /p-Si Stack  

SciTech Connect (OSTI)

Recent studies have shown that La{sub 2}O{sub 3} films can be used to adjust the threshold voltage (V{sub t}) of NMOS Hf-based high-k/metal gate devices to desirable values, and a dipole at the high-k/SiO{sub 2} interface has been proposed to explain the V{sub t} shifts. In order to investigate the mechanism of the V{sub t} shift further, we have measured the flatband voltage (V{sub fb}) and Si band bending of technologically relevant TiN/HfO{sub 2}/La{sub 2}O{sub 3}/SiO{sub 2}/p-Si stacks where the thickness and position of the La{sub 2}O{sub 3} layer have been systematically varied. We observed systematic changes in V{sub fb}, Si band bending and the HfO{sub 2}-Si valence band offset as a function of La{sub 2}O{sub 3} layer thickness and position. These changes can be explained by a band alignment model that includes a dipole at the high-k/SiO{sub 2} interface, thus supporting the work of previous authors. In addition, we have derived the theoretical relationship between V{sub fb} and Si band bending, which agrees well with our experimental measurements.

M Di; E Bersch; R Clark; S Consiglio; G Leusink; A Diebold

2011-12-31T23:59:59.000Z

386

Reply to comment on ``The structure of monolayer SiO2 on Mo(112): A 2-D [SiOSi] network or isolated [SiO4] units?''  

E-Print Network [OSTI]

experimental observations: (i) high resolution electron energy loss spectroscopy (HREELS) [2] and infrared reflection adsorption spectros- copy (IRAS) [36] show intense asymmetric vibrational modes related to Si species in the SiOMo linkage, with no evidence of a feature at or near 11.5 eV related to the oxygen

Goodman, Wayne

387

Search for Lambda-Doubling Transitions of SiH in Orion KL  

E-Print Network [OSTI]

A recent submillimeter line survey of Orion KL claimed detection of SiH. This paper reports on GBT observations of the 5.7 GHz Lambda-doubling transitions of SiH in Orion. Many recombination lines, including C164-delta, are seen, but SiH is not detected. The nondetection corresponds to an upper limit of 1.5 x 10^15 cm^-2 (4 sigma) for the beam-averaged column density of SiH. This suggests that the fractional abundance of SiH in the extended ridge is no more than twice that in the hot core.

Vincent L. Fish

2006-06-20T23:59:59.000Z

388

Suppression of tin precipitation in SiSn alloy layers by implanted carbon  

SciTech Connect (OSTI)

By combining transmission electron microscopy and Rutherford backscattering spectrometry, we have identified carbon related suppression of dislocations and tin precipitation in supersaturated molecular-beam epitaxial grown SiSn alloy layers. Secondary ion mass spectrometry has exposed the accumulation of carbon in the SiSn layers after high temperature carbon implantation and high temperature thermal treatment. Strain-enhanced separation of point defects and formation of dopant-defect complexes are suggested to be responsible for the effects. The possibility for carbon assisted segregation-free high temperature growth of heteroepitaxial SiSn/Si and GeSn/Si structures is argued.

Gaiduk, P. I., E-mail: gaiduk@phys.au.dk [Department of Physics and Astronomy/iNANO, Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C (Denmark); Belarusian State University, prosp. Nezavisimosti 4, 220030 Minsk (Belarus); Lundsgaard Hansen, J., E-mail: johnlh@phys.au.dk; Nylandsted Larsen, A., E-mail: anl@phys.au.dk [Department of Physics and Astronomy/iNANO, Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C (Denmark); Bregolin, F. L., E-mail: f.lipp-bregolin@hzdr.de; Skorupa, W., E-mail: W.Skorupa@hzdr.de [Department of Semiconductor Materials, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrae 400, 01328 Dresden (Germany)

2014-06-09T23:59:59.000Z

389

Integration of inverted InGaAs MSM array on Si substrate through low temperature  

E-Print Network [OSTI]

to reduce thermal stress at the interface. Huang et al. [2] presented a thin-film InGaAs MSM PD bonded to Si layers including those on InGaAs MSMs and Si/SiO2 is 860 nm. eching window InP epi-layer SiO2 Si Ti Au Au HCl:H3PO4 (1:1) to open a photodetection window. Citric acid was used to remove the InGaAs etching

Huang, Zhaoran "Rena"

390

SiO MASERS IN ASYMMETRIC MIRAS. III. IK TAURI  

SciTech Connect (OSTI)

This is the third paper in a series of multi-epoch observations at 7 mm wavelength of the SiO masers in several asymptotic giant branch stars from a sample of Mira variable stars showing evidence of asymmetric structure in the infrared. These stars have been observed interferometrically in the infrared by Infrared Optical Telescope Array and with Very Long Baseline Array measurements of the SiO masers. In this paper, we present the observations of IK Tauri (IK Tau). There is a persistent elliptical distribution of the masers around the star {approx}40 x {approx}30 mas in size with a major axis at position angle {approx}30 deg. The SiO masers in the circumstellar envelope exhibit large-scale systematic motions which reverse direction on timescales of a decade, roughly the interval between the ejections of dust shells. The orientations on the sky of the apparent rotation-like bulk motion and of the major axis of the maser ellipse differ by 37 deg. (2.5{sigma}) making any relationship uncertain. The systemic velocity of IK Tau is estimated to be 33.3 {+-} 1.0 km s{sup -1}. A comparison is made with the model calculations of Gray et al. which predict some but not all observed features.

Cotton, W. D. [National Radio Astronomy Observatory, 520 Edgemont Road, Charlottesville, VA 22903-2475 (United States); Ragland, S. [W. M. Keck Observatory, 65-1120 Mamalahoa Hwy, Kamuela, HI 96743 (United States); Pluzhnik, E. A. [NASA-Ames Research Center, Moffett Field, CA 94035 (United States); Danchi, W. C. [NASA Goddard Space Flight Center, Exoplanets and Stellar Astrophysics, Code 667, Greenbelt, MD 20771 (United States); Traub, W. A. [Jet Propulsion Laboratory, California Institute of Technology, M/S 301-451, 4800 Oak Grove Dr., Pasadena, CA 91109 (United States); Willson, L. A. [Department of Physics and Astronomy, Iowa State University, Ames, IA 50014 (United States); Lacasse, M. G. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States)], E-mail: bcotton@nrao.edu

2010-03-01T23:59:59.000Z

391

Surface functionalization of inorganic nano-crystals with fibronectin and E-cadherin chimera synergistically accelerates trans-gene delivery into embryonic stem cells  

SciTech Connect (OSTI)

Stem cells holding great promises in regenerative medicine have the potential to be differentiated to a specific cell type through genetic manipulation. However, conventional ways of gene transfer to such progenitor cells suffer from a number of disadvantages particularly involving safety and efficacy issues. Here, we report on the development of a bio-functionalized inorganic nano-carrier of DNA by embedding fibronectin and E-cadherin chimera on the carrier, leading to its high affinity interactions with embryonic stem cell surface and accelerated trans-gene delivery for subsequent expression. While only apatite nano-particles were very inefficient in transfecting embryonic stem cells, fibronectin-anchored particles and to a more significant extent, fibronectin and E-cadherin-Fc-associated particles dramatically enhanced trans-gene delivery with a value notably higher than that of commercially available lipofection system. The involvement of both cell surface integrin and E-cadherin in mediating intracellular localization of the hybrid carrier was verified by blocking integrin binding site with excess free fibronectin and up-regulating both integrin and E-cadherin through PKC activation. Thus, the new establishment of a bio-functional hybrid gene-carrier would promote and facilitate development of stem cell-based therapy in regenerative medicine.

Kutsuzawa, K. [Department of Biomolecular Engineering, Graduate School of Bioscience and Biotechnology, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8501 (Japan); Shizuoka Cancer Center Research Institute, 1007 Shimonagakubo, Nagaizumi-cho, Sunto-gun, Shizuoka 411-8777 (Japan); Chowdhury, E.H. [Department of Biomolecular Engineering, Graduate School of Bioscience and Biotechnology, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8501 (Japan); Shizuoka Cancer Center Research Institute, 1007 Shimonagakubo, Nagaizumi-cho, Sunto-gun, Shizuoka 411-8777 (Japan); Nagaoka, M. [Department of Biomolecular Engineering, Graduate School of Bioscience and Biotechnology, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8501 (Japan); Maruyama, K. [Shizuoka Cancer Center Research Institute, 1007 Shimonagakubo, Nagaizumi-cho, Sunto-gun, Shizuoka 411-8777 (Japan); Akiyama, Y. [Shizuoka Cancer Center Research Institute, 1007 Shimonagakubo, Nagaizumi-cho, Sunto-gun, Shizuoka 411-8777 (Japan); Akaike, T. [Department of Biomolecular Engineering, Graduate School of Bioscience and Biotechnology, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8501 (Japan) and Shizuoka Cancer Center Research Institute, 1007 Shimonagakubo, Nagaizumi-cho, Sunto-gun, Shizuoka 411-8777 (Japan)]. E-mail: takaike@bio.titech.ac.jp

2006-11-24T23:59:59.000Z

392

Crystal structure of Si-doped HfO{sub 2}  

SciTech Connect (OSTI)

Si-doped HfO{sub 2} was prepared by solid state synthesis of the starting oxides. Using Rietveld refinement of high resolution X-ray diffraction patterns, a substitutional limit of Si in HfO{sub 2} was determined as less than 9 at.?%. A second phase was identified as Cristobalite (SiO{sub 2}) rather than HfSiO{sub 4}, the latter of which would be expected from existing SiO{sub 2}-HfO{sub 2} phase diagrams. Crystallographic refinement with increased Si-dopant concentration in monoclinic HfO{sub 2} shows that c/b increases, while ? decreases. The spontaneous strain, which characterizes the ferroelastic distortion of the unit cell, was calculated and shown to decrease with increasing Si substitution.

Zhao, Lili [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); School of Information Science and Technology, Northwest University, Xi'an 710127 (China); Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Nelson, Matthew; Fancher, Chris M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Aldridge, Henry [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Iamsasri, Thanakorn; Forrester, Jennifer S.; Jones, Jacob L., E-mail: jacobjones@ncsu.edu [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Nishida, Toshikazu [Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States); Moghaddam, Saeed [Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611 (United States)

2014-01-21T23:59:59.000Z

393

Formation mechanisms of embedded nanocrystals in SiN{sub x}  

SciTech Connect (OSTI)

We have investigated the formation of embedded nanocrystals (NCs) in SiN{sub x} using Ga{sup +} focused-ion beam irradiation of SiN{sub x} membranes, followed by rapid thermal annealing (RTA). During irradiation, redeposition is enhanced by developing side walls, leading to enhanced near-surface [Ga] and [Si]. Subsequent RTA leads to the formation of Si and Ga NCs embedded in SiN{sub x}. When the ratio of the irradiated area to the sidewall area is increased, redeposition is limited, and SiN{sub x} and GaN NCs are also apparent. We discuss the effect of limited redeposition on NC formation and the catalytic effect of Ga on Si NC nucleation and growth.

Canniff, J. C. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Wood, A. W. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States); Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2013-06-17T23:59:59.000Z

394

Changes in the cytosolic concentra-tions of Ca2+  

E-Print Network [OSTI]

-malignant cells. Knockdown of SPCA2 in MCF-7 cells (a human breast adenocarcinoma cell line) led to inhibition+ levels in SPCA2-knockdown MCF-7 cells were reduced com- pared with control MCF-7 cells that SPCA2 localizes to the plasma membrane in MCF-7 cells, suggesting that it might interact with plasma

Kenny, Paraic

395

Post-translational histone modifica-tions influence gene regulation,  

E-Print Network [OSTI]

methylation at Oct4. This system, which is called chromatin in vivo assay (CiA), enables inductionK9me3 domains in the mouse genome. The authors propose that their novel CiA system is adaptable

Richardson, David

396

48 Extracurricular Activities Sec-tion, Student Division2  

E-Print Network [OSTI]

musical instrument] [acoustic music] Egoist Dancers [dance] KUES [music] [chorus] [matsuri dance] [city pollution study] R [environment network] [environment] [machine study] E.S.S. [English Speaking

Takada, Shoji

397

he Bush administra-tion has listed myriad  

E-Print Network [OSTI]

SURVEILLANCE: By dissembling random nuclear weapons in the stockpile and closely inspecting and testing explosives and nuclear materials at the Nevada Test Site to gather diagnostic information about weapons Nuclear Security Ad- ministration (NNSA), a division of the Energy Department, to scrutinize the nuclear

Rhoads, James

398

Sandia National Laboratories: pretreatment for biomass deconstruc-tion of  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1developmentturbine bladelifetimepower-to-gas applications

399

Hybrid Al/SiC Composite Optics for IFE Applications W. Kowbel, MER Corp., Tucson, AZ And M. Tillack, UCSD, La Jolla, CA  

E-Print Network [OSTI]

Hybrid Al/SiC Composite Optics for IFE Applications W. Kowbel, MER Corp., Tucson, AZ And M. Tillack support of the mirror is a SiC composite. The SiC composite is chosen for the following reasons: 1) VeryC-SiC composite. Subsequently, either CVD or PVD Si is deposited as the optical quality layer. The Si coating

Tillack, Mark

400

Theoretical Investigation of the Structure and Coverage of the Si(111)-OCH3 Surface Santiago D. Solares, David J. Michalak, William A. Goddard, III,* and Nathan S. Lewis*  

E-Print Network [OSTI]

from Si(111)-H and methanol is favorable at 300 K. The calculations have also indicated the conditions be divided into those producing surfaces having the functionalized Si in the formal Si(0) oxidation state, with Si-C-R bonding, or those producing surfaces having the functionalized Si in the Si(I) oxidation state

Goddard III, William A.

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Characterization of melt-infiltrated SiC/SiC composite combustor liners using meso- and micro-NDE techniques  

SciTech Connect (OSTI)

Melt-infiltrated ceramic matrix composite SiC/SiC material systems are under development for use in combustor liners for low-emission advanced gas turbines. Uncertainty in repeatability of processing methods for these large components (33--76 cm diameter), and hence possible reduced reliability for the end user. This requires that appropriate test methods, at both meso- and micro-scale, be used to ensure that the liners are acceptable for use. Nondestructive evaluation (NDE) methods, if demonstrated to reliably detect changes caused by processing, would be of significant benefit to both manufacturer and end user. This paper describes the NDE methods and their applications in detecting a process upset in a melt-infiltrated 33 cm combustor liner and how high-resolution scanning electron microscopy was used to verify the NDE data.

Ellingson, W. A.; Sun, J. G.; More, K. L.; Hines, R.

2000-01-26T23:59:59.000Z

402

Special features of the excitation spectra and kinetics of photoluminescence of the Si{sub 1-x}Ge{sub x}:Er/Si structures with relaxed heterolayers  

SciTech Connect (OSTI)

Luminescent properties of heteroepitaxial Si{sub 1-x}Ge{sub x}:Er/Si structures with relaxed heterolayers are studied. The results of combined studies of the excitation spectra and kinetics of photoluminescence (PL) are used to single out the components providing the largest contribution to the PL signal of the Si{sub 1-x}Ge{sub x}:Er/Si structures in the wavelength region of 1.54 {mu}m. It is shown that relaxation of elastic stresses in the Si{sub 1-x}Ge{sub x}:Er heterolayer affects only slightly the kinetic characteristics of erbium luminescence and manifests itself in insignificant contribution of the defects and defect-impurity complexes to the luminescent response of the Si{sub 1-x}Ge{sub x}:Er/Si structures. In the excitation spectra of the erbium PL, special features related to the possibility of the rare-earth impurity excitation at energies lower than the band gap of the Si{sub 1} {sub -x}Ge{sub x} solid solution are revealed. It is shown that a peak the width of which depends on the band gap of the solid solution and the extent of its relaxation is observed in the excitation spectra of the erbium-related PL in the Si{sub 1-x}Ge{sub x}:Er/Si structures in the wavelength region of 1040-1050 nm. The observed specific features are accounted for by involvement of intermediate levels in the band gap of the Si{sub 1-x}Ge{sub x}:Er solid solution in the process of excitation of an Er{sup 3+} ion.

Krasilnikova, L. V., E-mail: Luda@ipm.sci-nnov.ru; Yablonskiy, A. N.; Stepikhova, M. V.; Drozdov, Yu. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Shengurov, V. G. [Lobachevsky State University, Physicotechnical Research Institute (Russian Federation); Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2010-11-15T23:59:59.000Z

403

Effect of Al/Si Substitutions and Silanol Nests on the Local Geometry of Si and Al Framework Sites in Silicone-Rich Zeolites: A Combined High Resolution 27  

E-Print Network [OSTI]

Effect of Al/Si Substitutions and Silanol Nests on the Local Geometry of Si and Al Framework Sites in Silicone-Rich Zeolites: A Combined High Resolution 27 Al and 29 Si NMR and Density Functional TheoryVed: May 6, 2009; ReVised Manuscript ReceiVed: June 8, 2009 We employed 29 Si and 27 Al (3Q) magic

Sklenak, Stepan

404

low Si p+-n junctions fabricated by focused ion beam Ga+ implantation through thin Ti and TiSi2 layers  

E-Print Network [OSTI]

metals and silicide layers, in conjunction with rapid thermal annealing (RTA) to complete metal silicides and it forms uniform thin films on Si. Most of the current research involving salicide+ implantation through Ti metal (ITM) and TiSi, (ITS) layers, followed by rapid thermal annealing (RTA), has been

Steckl, Andrew J.

405

Stability and dynamics of Pt-Si liquid microdroplets on Si,,001... W.-C. Yang, H. Ade, and R. J. Nemanich*  

E-Print Network [OSTI]

transforms the thin film into silicide island structures.1 For some metal-Si (M-Si) systems . For these systems the metallic silicide islands will be in a liquid state at temperatures above the eutectic.1103/PhysRevB.69.045421 PACS number s : 68.08. p, 68.37.Nq I. INTRODUCTION It is well known that thin metal

406

Direct optical measurement of the valence band offset of p Si1 x yGexCy /p Si,,100... by heterojunction internal photoemission  

E-Print Network [OSTI]

have been performed to study the effect of substitutional carbon on the valence band offset with substitutional carbon levels up to 2.5%. Carbon decreased the valence band offset by 26 1 meV/% substitutional indicated that carbon decreased the valence band offset ( Ev) of the resulting Si1 x yGexCy /Si

Rokhinson, Leonid

407

2D-simulation and analysis of lateral SiC N-emitter SiGe P-base Schottky metal-collector (NPM) HBT on SOI  

E-Print Network [OSTI]

2D-simulation and analysis of lateral SiC N-emitter SiGe P-base Schottky metal-collector (NPM) HBT metal-collector NPM HBT on SOI. The proposed lateral NPM HBT performance has been evaluated in detail silicon NPM BJT structures. Based on our simu- lation results, it is observed that while both the lateral

Kumar, M. Jagadesh

408

Ripples in epitaxial graphene on the Si-terminated SiC (0001) surface F.Varchon, P.Mallet, J.-Y.Veuillen, and L.Magaud  

E-Print Network [OSTI]

Ripples in epitaxial graphene on the Si-terminated SiC (0001) surface F.Varchon, P.Mallet, J) Interaction with a substrate can modify the graphene honeycomb lattice and thus alter its out- standing properties. This could be particularly true for epitaxial graphene where the carbon layers are grown from

Paris-Sud XI, Universit de

409

1. Dumont, Grard-Franois, La France et l'Iran : des nations si lointaines et si proches , Gostratgiques, n 10,  

E-Print Network [OSTI]

1. Dumont, Gérard-François, « La France et l'Iran : des nations si lointaines et si proches Arménie ?mirats ar. unis Turkménistan Azerbaïdjan Arabie saoudite Irak Afghanistan Iran 71,2 69,2 31,9 31

Paris-Sud XI, Université de

410

X-ray reflection spectroscopy of the HfO2/SiO2/Si system in the region of the O-K absorption edge  

E-Print Network [OSTI]

profilometry of the sample. By using the Kramers-Kronig analysis, the reflection spectra are transformed on a top of a Si substrate is prepared. The Si substrate is a silicon single-crystal of p-type. The film is prepared by a dry

Boyer, Edmond

411

The interfacial reaction of Ni on (100) Si???xGex (x=0, 0.25) and (111) Ge  

E-Print Network [OSTI]

The interfacial reaction of Ni with Si, Si?.??Ge?.??, and Ge at 400C has been investigated. A uniform epitaxial NiSi film was obtained at 400C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, ...

Jin, Lijuan

412

Towards an Er-doped Si nanocrystal sensitized waveguide laser the thin line between gain and loss  

E-Print Network [OSTI]

somehow be eliminated from this scheme, the fabrication of low-cost Si based Er doped optical amplifiers1 Towards an Er-doped Si nanocrystal sensitized waveguide laser ­ the thin line between gain-doped Si nanocrystal co-doped SiO2, a composite material that can potentially be fabricated using a VLSI

Polman, Albert

413

Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers , M. J. Loboda1)  

E-Print Network [OSTI]

Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers G. Chung1) , M. J. Loboda comparative studies of recombination and carrier lifetimes in SiC. For the first time, both generation-wafer structures. The ratio of the generation to recombination lifetime is much different in SiC compared to Si

Schroder, Dieter K.

414

Top-emission Si-based phosphor organic light emitting diode with Au doped ultrathin n-Si film anode and bottom Al mirror  

SciTech Connect (OSTI)

We report a highly efficient top-emission Si-based phosphor organic light emitting diode (PhOLED) with an ultrathin polycrystalline n-Si:Au film anode and a bottom Al mirror. This anode is formed by magnetron sputtering followed by Ni induced crystallization and then Au diffusion. By optimizing the thickness of the n-Si:Au film anode, the Au diffusion temperature, and the other parameters of the PhOLED, the highest current and power efficiencies of the n-Si:Au film anode PhOLED reached 85{+-}9 cd/A and 80{+-}8 lm/W, respectively, corresponding to an external quantum efficiency of 21{+-}2% and a power conversion efficiency of 15{+-}2%, respectively, which are about 60% and 110% higher than those of the indium tin oxide anode counterpart and 70% and 50% higher than those of the bulk n{sup +}-Si:Au anode counterpart, respectively.

Li, Y. Z.; Xu, W. J.; Ran, G. Z. [State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Qin, G. G. [State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Key Lab of Semiconductor Materials, CAS, Beijing 100083 (China)

2009-07-20T23:59:59.000Z

415

Investigation of the release of Si from SiO{sub 2} during the formation of manganese/ruthenium barrier layers  

SciTech Connect (OSTI)

The thermodynamic and structural stability of ruthenium-manganese diffusion barriers on SiO{sub 2} is assessed. A {approx}2 nm film composed of partially oxidized manganese (MnO{sub x} where x < 1) was deposited on a 3 nm thick Ru film and the Mn-MnO{sub x}/Ru/SiO{sub 2} structure was subsequently thermally annealed. X-ray photoelectron spectroscopy and secondary ion mass spectroscopy studies suggest the release and upward diffusion of Si from the dielectric substrate as a result of manganese-silicate formation at the Ru/SiO{sub 2} interface. The migration of Si up through the Ru film results in further manganese-silicate formation upon its interaction with the Mn-MnO{sub x} deposited layer.

McCoy, A. P.; Casey, P.; Bogan, J.; Byrne, C.; Hughes, G. [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland)] [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland)

2013-05-20T23:59:59.000Z

416

Lattice-engineered Si{sub 1-x}Ge{sub x}-buffer on Si(001) for GaP integration  

SciTech Connect (OSTI)

We report a detailed structure and defect characterization study on gallium phosphide (GaP) layers integrated on silicon (Si) (001) via silicon-germanium (SiGe) buffer layers. The presented approach uses an almost fully relaxed SiGe buffer heterostructure of only 400?nm thickness whose in-plane lattice constant is matched to GaPnot at room but at GaP deposition temperature. Single crystalline, pseudomorphic 270?nm thick GaP is successfully grown by metalorganic chemical vapour deposition on a 400?nm Si{sub 0.85}Ge{sub 0.15}/Si(001) heterosystem, but carries a 0.08% tensile strain after cooling down to room temperature due to the bigger thermal expansion coefficient of GaP with respect to Si. Transmission electron microscopy (TEM) studies confirm the absence of misfit dislocations in the pseudomorphic GaP film but growth defects (e.g., stacking faults, microtwins, etc.) especially at the GaP/SiGe interface region are detected. We interpret these growth defects as a residue of the initial 3D island coalescence phase of the GaP film on the SiGe buffer. TEM-energy-dispersive x-ray spectroscopy studies reveal that these defects are often correlated with stoichiometric inhomogeneities in the GaP film. Time-of-flight Secondary ion mass spectrometry detects sharp heterointerfaces between GaP and SiGe films with a minor level of Ga diffusion into the SiGe buffer.

Skibitzki, Oliver, E-mail: skibitzki@ihp-microelectronics.com; Zaumseil, Peter; Yamamoto, Yuji; Andreas Schubert, Markus [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Paszuk, Agnieszka; Hannappel, Thomas [Technische Universitt Ilmenau, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany); Hatami, Fariba; Ted Masselink, W. [Institut fr Physik, Humboldt Universitt zu Berlin, Newtonstrasse 15, 12489 Berlin (Germany); Trampert, Achim [Paul Drude Institut fr Festkrperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Tillack, Bernd [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Technische Universitt Berlin, HFT4, Einsteinufer 25, 10587 Berlin (Germany); Schroeder, Thomas [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Brandenburgische Technische Universitt, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

2014-03-14T23:59:59.000Z

417

Creep performance of candidate SiC and Si{sub 3}N{sub 4} materials for land-based, gas turbine engine components  

SciTech Connect (OSTI)

Tensile creep-rupture of a commercial gas pressure sintered Si3N4 and a sintered SiC is examined at 1038, 1150, and 1350 C. These 2 ceramics are candidates for nozzles and combustor tiles that are to be retrofitted in land-based gas turbine engines, and there is interest in their high temperature performance over service times {ge} 10,000 h (14 months). For this long lifetime, a static tensile stress of 300 MPa at 1038/1150 C and 125 Mpa at 1350 C cannot be exceeded for Si3N4; for SiC, the corresponding numbers are 300 Mpa at 1038 C, 250 MPa at 1150 C, and 180 MPa at 1350 C. Creep-stress exponents for Si3N4 are 33, 17, and 8 for 1038, 1150, 1350 C; fatigue- stress exponents are equivalent to creep exponents, suggesting that the fatigue mechanism causing fracture is related to the creep mechanism. Little success was obtained in producing failure in SiC after several decades of time through exposure to appropriate tensile stress; if failure did not occur on loading, then the SiC specimens most often did not creep-rupture. Creep-stress exponents for the SiC were determined to be 57, 27, and 11 for 1038, 1150, and 1350 C. For SiC, the fatigue-stress exponents did not correlate as well with creep-stress exponents. Failures that occurred in the SiC were a result of slow crack growth that initiated from the surface.

Wereszczak, A.A.; Kirkland, T.P.

1996-03-01T23:59:59.000Z

418

HH 9^0 Si 3S Ris-R-797(EN) "Riso-R-Wfew)  

E-Print Network [OSTI]

. On Power Quality Measures for Wind-Diesel Systems: A Conceptual Framework and a Case Study 118 H.W. Bindner of subjects including wind resources, reliability and load assessment, grid connec- tion, wind-diesel systems and P. Lundsager. Engineering Design Toob for Wind Diesel - Summary of First Release Version 125 D

419

Biodegradable Nanoparticles With Sustained Release of Functional siRNA in Skin  

E-Print Network [OSTI]

polymer poly(L-lactic acid) (L-PLA) was used together with a copolymer of L-PLA-poly(ethylene glycol) (PEG). The addition of PEG to L-PLA was intended to improve in vivo circulation and reduce agglomera- tion of the NPs

Zare, Richard N.

420

Si nous appelons Sx et S2 les distances respectives entre les pics 1 et 2 d'une part, 5 et 6 d'autre part, le  

E-Print Network [OSTI]

metalliques par r6due- tion d'halog6nures a haute temperature est devenue une methode classique d'obtention de

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Antireflection and SiO2 Surface Passivation by Liquid-Phase Chemistry for Efficient Black Silicon Solar Cells: Preprint  

SciTech Connect (OSTI)

We report solar cells with both black Si antireflection and SiO2 surface passivation provided by inexpensive liquid-phase chemistry, rather than by conventional vacuum-based techniques. Preliminary cell efficiency has reached 16.4%. Nanoporous black Si antireflection on crystalline Si by aqueous etching promises low surface reflection for high photon utilization, together with lower manufacturing cost compared to vacuum-based antireflection coating. Ag-nanoparticle-assisted black Si etching and post-etching chemical treatment recently developed at NREL enables excellent control over the pore diameter and pore separation. Performance of black Si solar cells, including open-circuit voltage, short-circuit current density, and blue response, has benefited from these improvements. Prior to this study, our black Si solar cells were all passivated by thermal SiO2 produced in tube furnaces. Although this passivation is effective, it is not yet ideal for ultra-low-cost manufacturing. In this study, we report, for the first time, the integration of black Si with a proprietary liquid-phase deposition (LPD) passivation from Natcore Technology. The Natcore LPD forms a layer of <10-nm SiO2 on top of the black Si surface in a relatively mild chemical bath at room temperature. We demonstrate black Si solar cells with LPD SiO2 with a spectrum-weighted average reflection lower than 5%, similar to the more costly thermally grown SiO2 approach. However, LPD SiO2 provides somewhat better surface-passivation quality according to the lifetime analysis by the photo-conductivity decay measurement. Moreover, black Si solar cells with LPD SiO2 passivation exhibit higher spectral response at short wavelength compared to those passivated by thermally grown SiO2. With further optimization, the combination of aqueous black Si etching and LPD could provide a pathway for low-cost, high-efficiency crystalline Si solar cells.

Yuan, H. C.; Oh, J.; Zhang, Y.; Kuznetsov, O. A.; Flood, D. J.; Branz, H. M.

2012-06-01T23:59:59.000Z

422

RECOMBINATION RATE COEFFICIENTS OF Be-LIKE Si  

SciTech Connect (OSTI)

Recombination of Be-like Si{sup 10+} over the 0-43 eV electron-ion energy range is measured at the CRYRING electron cooler. In addition to radiative and dielectronic recombination, the recombination spectrum also shows strong contributions from trielectronic recombination. Below 100 meV, several very strong resonances associated with a spin-flip of the excited electron dominate the spectrum and also dominate the recombination in the photoionized plasma. The resonant plasma rate coefficients corrected for the experimental field ionization are in good agreement with calculated results by Gu and with AUTOSTRUCTURE calculations. All other calculations significantly underestimate the plasma rate coefficients at low temperatures.

Orban, I.; Boehm, S.; Schuch, R. [Department of Physics, Stockholm University, 10691 Stockholm (Sweden); Loch, S. D. [Department of Physics, Auburn University, Auburn, AL 36849 (United States)

2010-10-01T23:59:59.000Z

423

Heat Transfer between Graphene and Amorphous SiO2  

E-Print Network [OSTI]

We study the heat transfer between graphene and amorphous SiO2. We include both the heat transfer from the area of real contact, and between the surfaces in the non-contact region. We consider the radiative heat transfer associated with the evanescent electromagnetic waves which exist outside of all bodies, and the heat transfer by the gas in the non-contact region. We find that the dominant contribution to the heat transfer result from the area of real contact, and the calculated value of the heat transfer coefficient is in good agreement with the value deduced from experimental data.

B. N. J. Persson; H. Ueba

2010-07-22T23:59:59.000Z

424

Diamond turning of Si and Ge single crystals  

SciTech Connect (OSTI)

Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

Blake, P.; Scattergood, R.O.

1988-12-01T23:59:59.000Z

425

Giant Quadrupole and Monopole Resonances in Si-28  

E-Print Network [OSTI]

PHYSICAL REVIE%' C VOLUME 31, NUMBER 5 Giant quadrupole and monopole resonances in assi MAY 1985 Y.-W. Lui, J. D. Bronson, D. H. Youngblood, and Y. Toba Cyclotron Institute, Texas A&M University, College Station, Texas 77843 U. Garg* Physics... in regions of interest. The 31 1643 1985 The American Physical Society 1644 LUI, BRONSON, YOUNGBLOOD, TOBA, AND GARG thickness of the Si target was 2.05 mg/cm . The inelast- ically scattered alpha particles were detected in the focal plane of the Enge...

Lui, YW; Bronson, J. D.; Youngblood, David H.; Toba, Y.; Garg, U.

1985-01-01T23:59:59.000Z

426

Low Reactivity SI Engine Lubricant Program | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensionalthe10IO1OP001Long-Term Storage ofEnergyReactivity SI Engine

427

SiLas GmbH | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revisionEnvReviewNonInvasiveExplorationUT-g Grant ofRichardton AbbeyARaftPadoma WindShreyavaidya has notSiLas GmbH

428

SiXtron Advanced Materials | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revisionEnvReviewNonInvasiveExplorationUT-g Grant ofRichardton AbbeyARaftPadoma WindShreyavaidya has notSiLas

429

Silicon Genesis Corp SiGen | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revisionEnvReviewNonInvasiveExplorationUT-g Grant ofRichardton AbbeyARaftPadomaSierra Leone)Sikes ActSiGen Jump

430

SiZRiBUTtOM OF THIS DOCUMBT I S  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administrationcontroller systemsBi (2)Sharing Smart GridShift End ShiftShowerheadsShutthaSi

431

Sandia National Laboratories: GeneSiC Semiconductor  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 -theErik Spoerke SSLS Exhibit at Explora MuseumFloatingFrontGTO Sandia WinsGeneSiC

432

Photoluminescence and positron annihilation spectroscopy investigation of (Ge, Er) codoped Si oxides deposited by magnetron sputtering  

SciTech Connect (OSTI)

We have investigated the nature of violet-blue emission from (Ge, Er) codoped Si oxides (Ge+Er+SiO{sub 2}) using photoluminescence (PL) and positron annihilation spectroscopy (PAS) measurements. The PL spectra and PAS analysis for a control Ge-doped SiO{sub 2} (Ge+SiO{sub 2}) indicate that Ge-associated neutral oxygen vacancies (Ge-NOV) are likely responsible for the major emission in the violet-blue band. For Ge+Er+SiO{sub 2}, both Ge-NOV and GeO color centers are believed to be responsible for the emission band. The addition of Er has a significant influence on the emission, which is discussed in terms of Er-concentration-related structural change in the Ge+Er+SiO{sub 2}.

Heng, C. L.; Chelomentsev, E.; Peng, Z. L.; Mascher, P. [Department of Engineering Physics and Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4K1 (Canada); Simpson, P. J. [Department of Physics and Astronomy, University of Western Ontario, London, Ontario N6A 3K7 (Canada)

2009-01-01T23:59:59.000Z

433

Silicate layer formation at Pr{sub 2}O{sub 3}/Si(001) interfaces  

SciTech Connect (OSTI)

We studied Pr{sub 2}O{sub 3}/Si(001) interfaces by synchrotron radiation photoelectron spectroscopy and by ab initio calculations. We show that the interface formed during molecular-beam epitaxy under the oxygen partial pressure above 1x10{sup -8} mbar consists of a mixed Si-Pr oxide, such as (Pr{sub 2}O{sub 3})(SiO){sub x}(SiO{sub 2}){sub y}. Neither an interfacial SiO{sub 2} nor an interfacial silicide is formed. The silicate formation is driven by a low energy of O in a PrOSi bond and by the strain in the subsurface SiO{sub x} layer. We expect that this natural interfacial Pr silicate will facilitate the integration of the high-k dielectric Pr{sub 2}O{sub 3} into future complementary metal-oxide-semiconductor technologies.

Schmeisser, D.; Muessig, H.-J.; Dabrowski, J. [Angewandte Physik-Sensorik, BTU Cottbus, Postfach 10 13 44, D-03013 Cottbus (Germany); IHP, Im Technologiepark 25, D-15236 Frankfurt (Germany)

2004-07-05T23:59:59.000Z

434

Surface alloys of icosahedral AlMnSi with phason distortions  

SciTech Connect (OSTI)

The microstructures produced by electron-beam melting and by ion-beam mixing Al/Mn and Al/Mn/Si layers on Si substrates are examined. The treatments were found to incorporate Si from the substrate into the surface alloy. Several phases formed, depending on treatment, including ..cap alpha..- and ..beta..-AlMnSi, ..mu..-AlMn (epitaxial on Si(111), and amorphous and icosahedral AlMnSi. The observed microstructures relate the novel icosahedral phase to other phases and elucidate its formation kinetics. Diffraction patterns from large icosahedral grains (up to 5 ..mu..m) show distortions in the position and shape of weak (but not strong) reflections, as predicted for phason defects in a quasicrystalline lattice, one of the structures proposed for icosahedral phases.

Follstaedt, D.M.; Knapp, J.A.

1986-12-01T23:59:59.000Z

435

Light Trapping for High Efficiency Heterojunction Crystalline Si Solar Cells: Preprint  

SciTech Connect (OSTI)

Light trapping plays an important role to achieve high short circuit current density (Jsc) and high efficiency for amorphous/crystalline Si heterojunction solar cells. Si heterojunction uses hydrogenated amorphous Si for emitter and back contact. This structure of solar cell posses highest open circuit voltage of 0.747 V at one sun for c-Si based solar cells. It also suggests that over 25% record-high efficiency is possible with further improvement of Jsc. Light trapping has two important tasks. The first one is to reduce the surface reflectance of light to zero for the solar spectrum that Si has a response. The second one is to increase the effective absorption length to capture all the photon. For Si heterojunction solar cell, surface texturing, anti-reflectance indium tin oxides (ITO) layer at the front and back are the key area to improve the light trapping.

Wang, Q.; Xu, Y.; Iwaniczko, E.; Page, M.

2011-04-01T23:59:59.000Z

436

Synthesis of One-Dimensional SiC Nanostructures from a Glassy Buckypaper  

SciTech Connect (OSTI)

A simple and scalable synthetic strategy was developed for the fabrication of one-dimensional SiC nanostructures - nanorods and nanowires. Thin sheets of single-walled carbon nanotubes (SWNTs) were prepared by vacuum filtration and were washed repeatedly with sodium silicate (Na{sub 2}SiO{sub 3}) solution. The resulting glassy buckypaper was heated at 1300 - 1500 C under Ar/H{sub 2} to allow a solid state reaction between C and Si precursors to form a variety of SiC nanostructures. The morphology and crystal structures of SiC nanorods and nanowires were characterized using scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), energy dispersive xray spectroscopy (EDX), electron diffraction (ED) and x-ray diffraction (XRD) techniques. Furthermore, electrical conductance measurements were performed on SiC nanorods, demonstrating their potential applications in high-temperature sensors and control systems.

Ding, Mengning; Star, Alexander

2013-03-27T23:59:59.000Z

437

Oxidation of SiC cladding under Loss of Coolant Accident (LOCA) conditions in LWRs  

SciTech Connect (OSTI)

An experimental assessment of Silicon Carbide (SiC) cladding oxidation rate in steam under conditions representative of Loss of Coolant Accidents (LOCA) in light water reactors (LWRs) was conducted. SiC oxidation tests were performed with monolithic alpha phase tubular samples in a vertical quartz tube at a steam temperature of 1140 deg. C and steam velocity range of 1 to 10 m/sec, at atmospheric pressure. Linear weight loss of SiC samples due to boundary layer controlled reaction of silica scale (SiO{sub 2} volatilization) was experimentally observed. The weight loss rate increased with increasing steam flow rate. Over the range of test conditions, SiC oxidation rates were shown to be about 3 orders of magnitude lower than the oxidation rates of zircaloy 4. A SiC volatilization correlation for developing laminar flow in a vertical channel is formulated. (authors)

Lee, Y.; Yue, C.; Arnold, R. P.; McKrell, T. J.; Kazimi, M. S. [Dept. of Nuclear Science and Engineering, Massachusetts Inst. of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139-4307 (United States)

2012-07-01T23:59:59.000Z

438

Electronic properties of III-nitride semiconductors: A first-principles investigation using the Tran-Blaha modified Becke-Johnson potential  

SciTech Connect (OSTI)

In this work, we use density functional theory to investigate the influence of semilocal exchange and correlation effects on the electronic properties of III-nitride semiconductors considering zinc-blende and wurtzite crystal structures. We find that the inclusion of such effects through the use of the Tran-Blaha modified Becke-Johnson potential yields an excellent description of the electronic structures of these materials giving energy band gaps which are systematically larger than the ones obtained with standard functionals such as the generalized gradient approximation. The discrepancy between the experimental and theoretical band gaps is then significantly reduced with semilocal exchange and correlation effects. However, the effective masses are overestimated in the zinc-blende nitrides, but no systematic trend is found in the wurtzite compounds. New results for energy band gaps and effective masses of zinc-blende and wurtzite indium nitrides are presented.

Araujo, Rafael B., E-mail: rafaelbna@gmail.com; Almeida, J. S. de, E-mail: jailton-almeida@hotmail.com; Ferreira da Silva, A. [Instituto de Fsica, Universidade Federal da Bahia, Campus Universitrio de Ondina, 40210-340 Salvador, Bahia (Brazil)

2013-11-14T23:59:59.000Z

439

"TNOs are Cool": A survey of the trans-Neptunian region -- VII. Size and surface characteristics of (90377) Sedna and 2010 EK139  

E-Print Network [OSTI]

We present estimates of the basic physical properties (size and albedo) of (90377) Sedna, a prominent member of the detached trans-Neptunian object population and the recently discovered scattered disk object 2010 EK139, based on the recent observations acquired with the Herschel Space Observatory, within the "TNOs are Cool!" key programme. Our modeling of the thermal measurements shows that both objects have larger albedos and smaller sizes than the previous expectations, thus their surfaces might be covered by ices in a significantly larger fraction. The derived diameter of Sedna and 2010 EK139 are 995 +/- 80 km and 470 +35/-10 km, while the respective geometric albedos are pV 0.32 +/- 0.06 and 0.25 +0.02/-0.05. These estimates are based on thermophysical model techniques.

Pl, Andrs; Mller, Thomas G; Santos-Sanz, Pablo; Vilenius, Esa; Szalai, Nikolett; Mommert, Michael; Lellouch, Emmanuel; Rengel, Miriam; Hartogh, Paul; Protopapa, Silvia; Stansberry, John; Ortiz, Jose-Luis; Duffard, Ren; Thirouin, Audrey; Henry, Florence; Delsanti, Audrey

2012-01-01T23:59:59.000Z

440

Solubility of methane in cyclohexane and in trans-decalin at temperatures from 323 to 423 K at pressures to 9.6 MPa  

SciTech Connect (OSTI)

Solubility data are presented for methane in the naphthenic solvents cyclohexane and trans-decalin (decahydronaphthalene) at temperatures from 323 to 423 K and pressures to 9.6 MPa. The data for methane + cyclohexane are in reasonable agreement with the measurements of Reamer et al. but differ significantly from some of the data of Schoch et al. The new data can be described with root-mean-square errors of about 0.0005 mole fraction by the Soave-Redlich-Kwong and Peng-Robinson equations of state when a single interaction parameter per isotherm is employed in the equations. Addition of a second interaction parameter provides little improvement in the quality of representation of the data.

Darwish, N.A. [Jordan Univ. of Science and Technology, Irbid (Jordan). Dept. of Chemical Engineering] [Jordan Univ. of Science and Technology, Irbid (Jordan). Dept. of Chemical Engineering; Gasem, K.A.M.; Robinson, R.L. Jr. [Oklahoma State Univ., Stillwater, OK (United States). School of Chemical Engineering] [Oklahoma State Univ., Stillwater, OK (United States). School of Chemical Engineering

1998-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Wydzga, M.A., M.A. Hassan, J.G. Venditti, T. Dunne (2005), Can interlocked grains reduce the mobility of gravel bed rivers?, Eos Trans. AGU, 86(52), Fall Meet. Suppl., Abstract H53B-0462.  

E-Print Network [OSTI]

the mobility of gravel bed rivers?, Eos Trans. AGU, 86(52), Fall Meet. Suppl., Abstract H53B-0462. Can interlocked grains reduce the mobility of gravel bed rivers? M.A. Wydzga1 , M.A. Hassan2 , J.G. Venditti3 , T of Earth and Planetary Science, University of California, Berkeley, CA 94720 Channel stability of gravel

Venditti, Jeremy G.

2005-01-01T23:59:59.000Z

442

1. [M] Estimate the fraction of the total transported energy (in the form of gasoline) in the Trans-Alaska Pipeline that is consumed in pumping. As always, try not to look anything up.  

E-Print Network [OSTI]

1. [M] Estimate the fraction of the total transported energy (in the form of gasoline) in the Trans to this (which is 1 bend per 10 m). So we can toss this out. Now estimate the energy content of gasoline: Many

Nimmo, Francis

443

Etude biochimique et morphologique des particules lipoprotiques de la lymphe intestinale de rat au cours de l'absorption d'acide olique ou de son isomre trans, l'acide tadique,  

E-Print Network [OSTI]

, iso- mère trans de l'acide oléique. On infuse dans une anse intestinale de rat, 90 Ilmoles d'absorption se situe au cours de la seconde demi-heure qui suit l'infusion du régime « acide olëique» (37 + 3

Boyer, Edmond

444

Refinement of Mg{sub 2}Si reinforcement in a commercial Al20%Mg{sub 2}Si in-situ composite with bismuth, antimony and strontium  

SciTech Connect (OSTI)

Refinement by addition elements of AlMg{sub 2}Si alloys is known to result in a change of primary Mg{sub 2}Si morphology. In this paper, the effects of Bi, Sb and Sr on the characteristic parameters of Al20%Mg{sub 2}Si in-situ composite have been investigated by computer aided cooling curve thermal analysis and microstructural inspection. Size, density and aspect ratio measurements showed that additions of 0.4 wt.% Bi, 0.8 wt.% Sb and 0.01 wt.% Sr refined the Mg{sub 2}Si reinforcement. Exceeding these concentrations, however, resulted in coarsening of Mg{sub 2}Si particles with no change in the morphology. The results also showed that addition elements caused a decrease in the nucleation and growth temperatures of Mg{sub 2}Si particles. The refining effect of Bi, Sb and Sr is likely to be related to the effect of oxide bifilms suspended in the composite melt as favored nucleation substrates for Mg{sub 2}Si particles. - Highlight: 0.4 wt.%, 0.8 wt.% and 0.01 wt.% is the optimum content for Bi, Sb and Sr addition. Exceeding optimum concentration resulted in the coarsening of reinforcements. Nucleation and growth temperatures decrease with addition of Bi, Sb and Sr. The refining effect of Bi, Sb and Sr is likely to be related to the oxide bifilms.

Nordin, Nur Azmah; Farahany, Saeed, E-mail: saeedfarahany@gmail.com; Ourdjini, Ali; Abu Bakar, Tuty Asma; Hamzah, Esah

2013-12-15T23:59:59.000Z

445

The formation of the positive, fixed charge at c-Si(111)/a-Si$_3$N$_{3.5}$:H interfaces  

E-Print Network [OSTI]

Modern electronic devices are unthinkable without the well-controlled formation of interfaces at heterostructures. These often involve at least one amorphous material. Modeling such interfaces poses a significant challenge, since a meaningful result can only be expected by using huge models or by drawing from many statistically independent samples. Here we report on the results of high throughput calculations for interfaces between crystalline silicon (c-Si) and amorphous silicon nitride (a-Si$_3$N$_{3.5}$:H), which are omnipresent in commercially available solar cells. The findings reconcile only partly understood key features. At the interface, threefold coordinated Si atoms are present. These are caused by the structural mismatch between the amorphous and crystalline part. The local Fermi level of undoped c-Si lies well below that of a-SiN:H. To align the Fermi levels in the device, charge is transferred from the a-SiN:H part to the c-Si part resulting in an abundance of positively charged, threefold coord...

Hintzsche, L E; Marsman, M; Lamers, M W P E; Weeber, A W; Kresse, G

2015-01-01T23:59:59.000Z

446

Segregation gettering by implantation-formed cavities and B-Si precipitates in silicon  

SciTech Connect (OSTI)

The authors show that Fe, Co, Cu, and Au in Si undergo strong segregation gettering to cavities and B-Si precipitates formed by He or B ion implantation and annealing. The respective mechanisms are argued to be chemisorption on the cavity walls and occupation of solution sites within the disordered, B-rich, B-Si phase. The strengths of the reactions are evaluated, enabling prediction of gettering performance.

Myers, S.M.; Petersen, G.A.; Follstaedt, D.M. [Sandia National Lab., Albuquerque, NM (United States)] [and others

1998-01-01T23:59:59.000Z

447

Recent advances in III-V on Si integration for high-efficiency,  

E-Print Network [OSTI]

Recent advances in III-V on Si integration for high-efficiency, low cost MJ cells Minjoo Larry Lee for concentrator photovoltaics Metamorphic mid-infrared (2-3 m) materials and devices(w/ D.Wasserman, UIUC Conclusions 4 300 mm Si Low-cost, high- efficiency MJ cells on 300 mm Si 50 mm GaP 150 mm GaAs #12;Challenge

Firestone, Jeremy

448

Results of a Si/CdTe Compton Telescope  

E-Print Network [OSTI]

We have been developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. We use a Si strip and CdTe pixel detector for the Compton telescope to cover an energy range from 60 keV. For energies above several hundred keV, the higher efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as an absorber and a scatterer. In order to demonstrate the spectral and imaging capability of a CdTe-based Compton Telescope, we have developed a Compton telescope consisting of a stack of CdTe pixel detectors as a small scale prototype. With this prototype, we succeeded in reconstructing images and spectra by solving the Compton equation from 122 keV to 662 keV. The energy resolution (FWHM) of reconstructed spectra is 7.3 keV at 511 keV and 3.1 keV at 122 keV, respectively. The angular resolution obtained at 511 keV is measured to be 12.2 degree (FWHM).

Kousuke Oonuki; Takaaki Tanaka; Shin Watanabe; Shin'ichiro Takeda; Kazuhiro Nakazawa; Takefumi Mitani; Tadayuki Takahashi; Hiroyasu Tajima; Yasushi Fukazawa; Masaharu Nomachi

2005-09-21T23:59:59.000Z

449

Optimization of Process Parameters for Si Lateral PIN Photodiode  

E-Print Network [OSTI]

Abstract: This paper is about four optimization factors of process parameters, namely the intrinsic region length, photoabsorption layer thickness, the incident optical power and the bias voltage in a Si lateral pin-photodiode so as to obtain high frequency response and responsivity. Optimization of these parameters is based on Taguchi optimization method. In terms of simulation for the fabrication and device electrical characterization, ATHENA and ATLAS software from Silvaco Int. were used respectively. The identified factors have three best levels which give different combination based on L9 orthogonal array by Taguchi optimization method. In order to find the optimum factors and levels, signal-to-noise ratios (SNR) of larger-the-better (LTB) was applied. The analysis showed that the entire identified factors gave significant effect on the optical properties of the Si lateral pin-photodiode. It is revealed that the best result for responsivity and frequency response after the optimization approaches were 0.62A/W and 13.1 GHz respectively which respond to the optimized value for intrinsic region length of 6 m, photoabsorption layer thickness of 50 m, incident optical 2 power of 1 mW/cm and bias voltage of 3 V. As a conclusion, the optimum solution in achieving the desired high speed photodiode was successfully predicted using Taguchi optimization method. Key words: Taguchi method Photodiode Lateral p-i-n Simulation Silvaco

P. S. Menon; S. Kalthom Tasirin; Ibrahim Ahmad; S. Fazlili Abdullah

450

Microstructural Development in Al-Si Powder During Rapid Solidification  

SciTech Connect (OSTI)

Powder metallurgy has become an increasingly important form of metal processing because of its ability to produce materials with superior mechanical properties. These properties are due in part to the unique and often desirable microstructures which arise as a result of the extreme levels of undercooling achieved, especially in the finest size powder, and the subsequent rapid solidification which occurs. A better understanding of the fundamental processes of nucleation and growth is required to further exploit the potential of rapid solidification processing. Aluminum-silicon, an alloy of significant industrial importance, was chosen as a model for simple eutectic systems displaying an unfaceted/faceted interface and skewed coupled eutectic growth zone, Al-Si powder produced by high pressure gas atomization was studied to determine the relationship between microstructure and alloy composition as a function of powder size and atomization gas. Critical experimental measurements of hypereutectic (Si-rich) compositions were used to determine undercooling and interface velocity, based on the theoretical models which are available. Solidification conditions were analyzed as a function of particle diameter and distance from nucleation site. A revised microstructural map is proposed which allows the prediction of particle morphology based on temperature and composition. It is hoped that this work, by providing enhanced understanding of the processes which govern the development of the solidification morphology of gas atomized powder, will eventually allow for better control of processing conditions so that particle microstructures can be optimized for specific applications.

Amber Lynn Genau

2004-12-19T23:59:59.000Z

451

Microsoft Word - 911144_0_SSC-13 S-I HPS Test Plan_rel.doc  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

4 Revision 0 ENGINEERING SERVICES FOR THE NEXT GENERATION NUCLEAR PLANT (NGNP) WITH HYDROGEN PRODUCTION Test Plan for S-I Hydrogen Production System (HPS) Prepared by General...

452

A switch from Si(OH)4 to NO3 depletion in the glacial  

E-Print Network [OSTI]

and atmospheric pCO2 through its effect on the Si:N ratio of diatoms [Hutchins and Bruland, 1998; Takeda, 1998

Gruber, Nicolas

453

Synthesis and Characterization of Polymer-Coated Layered SiOx...  

Broader source: Energy.gov (indexed) [DOE]

component compatibility Partners * Jason Zhang (PNNL) * Gao Liu and Vince Battaglia (LBNL) * Nissan R&D Center (USA) 2 Overview Achieve high performance Si anode materials...

454

Combustion optimization in a hydrogen-enhanced lean burn SI engine  

E-Print Network [OSTI]

Lean operation of spark ignition (SI) automotive engines offers attractive performance incentives. Lowered combustion temperatures inhibit NO[sub]x pollutant formation while reduced manifold throttling minimizes pumping ...

Goldwitz, Joshua A. (Joshua Arlen), 1980-

2004-01-01T23:59:59.000Z

455

Line-source E beam crystallization of Si on silicon nitride layers  

SciTech Connect (OSTI)

The use of a swept line-source electron beam is reported for liquid phase recrystallization of Si films on Si/sub 3/N/sub 4/ layers over Si substrates. For the case of 5000A of Si on 1000A of Si/sub 3/N/sub 4/ layers over Si the growth of Si crystalline regions as large as 0.5 x 5 mm of predominately (100) orientation normal to the film and (010) in the sweep direction has been demonstrated. The nucleation of grain growth for this case occurred at small defects in the nitride layer at the edge of the treated area, growing out as far as 500 ..mu..m over intact nitride. Thicker nitrides (2500A) remained intact at power densities useful for treating the Si film. For this thicker nitride non-seeded growth is demonstrated for single and repetitively melted Si. In all cases the surface morphology of the regrown regions is suggestive of rapid growth along <100> directions.

Knapp, J.A.; Picraux, S.T.; Lee, K.; Gibbons, J.F.; Sedgwick, T.O.; Depp, S.W.

1981-01-01T23:59:59.000Z

456

Development of an SI DI Ethanol Optimized Flex Fuel Engine Using...  

Broader source: Energy.gov (indexed) [DOE]

SI DI Ethanol Optimized Flex Fuel Engine Using Advanced Valvetrain Wayne Moore, Matt Foster, Kevin Hoyer, Keith Confer Delphi Advanced Powertrain DEER Conference September 29, 2010...

457

E-Print Network 3.0 - atomistic si etching Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

a dense surface induced the decrease in reaction area... . Keywords: Low dielectric; SiO2 aerogel; Plasma ... Source: Yeom, Geun Young - Materials Engineering Department,...

458

A Model for Phosphosilicate Glass Deposition via POCl3 for Control of Phosphorus Dose in Si  

SciTech Connect (OSTI)

Effective control of diffused phosphorus profiles in crystalline silicon requires detailed understanding of the doping process. We develop a model and analyze concentration profiles within the deposited phosphosilicate glass (PSG) for a range of POCl3 conditions. During predeposition, a PSG layer with composition nearly independent of process conditions forms. This layer is separated from Si by a thin SiO2 layer. There is also strong accumulation of P at the SiO2-Si interface. A simple linear-parabolic model cannot fully explain the kinetics of thickness and dose; while an improved model including oxygen dependence and dose saturation gives better fits to the experiments.

Chen, Renyu; Wagner, Hannes; Dastgheib-Shirazi, Amir; Kessler, Michael; Zhu, Zihua; Shutthanandan, V.; Altermatt, Pietro P.; Dunham, Scott T.

2012-12-27T23:59:59.000Z

459

A study of various encapsulation schemes for c-Si solar cells with EVA encapsulants  

SciTech Connect (OSTI)

Several encapsulation schemes for crystalline Si (c-Si) solar cells, grouped into three categories of superstrate/encapsulant/Si-cell/encapsulant/substrate, were studied using different superstrates and substrates with extruded EVA films as the main encapsulant materials. A number of technical problems were observed and practical solutions to the problems are presented. The results are useful for designing and fabricating various samples of encapsulated c-Si cells and mini-modules for accelerated weathering tests in our future work. {copyright} {ital 1997 American Institute of Physics.}

Pern, F.J.; Glick, S.H. [Center for Performance Engineering and Reliability, National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, Colorado 80401 (United States)

1997-02-01T23:59:59.000Z

460

E-Print Network 3.0 - annular si drift Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

. Using the constant current method, they si- multaneously measured the transient void fraction, the speed Source: Zhao, Tianshou - Department of Mechanical Engineering,...

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Delivery of cationic polymer-siRNA nanoparticles for gene therapies in neural regeneration  

SciTech Connect (OSTI)

Highlights: Black-Right-Pointing-Pointer Nogo receptor can inhibit growth of injured axons, thus affecting neural regeneration. Black-Right-Pointing-Pointer The delivery of siRNA is crucial to inhibit NgR expression in NSCs. Black-Right-Pointing-Pointer Non-viral vector PEG-PEI condensed siRNA targeting NgR into nanoscale particles. Black-Right-Pointing-Pointer PEG-PEI/siRNA at N/P = 15 displayed high transfection efficiency and low cytotoxicity. Black-Right-Pointing-Pointer PEG-PEI has great potential in carrying siRNA to diminish the gene expression in NSCs. -- Abstract: The therapeutic applications of neural stem cells (NSCs) have potential to promote recovery in many obstinate diseases in central nervous system. Regulation of certain gene expressions using siRNA may have significant influence on the fate of NSC. To achieve the optimum gene silencing effect of siRNA, non-viral vector polyethylene glycol-polyethyleneimine (PEG-PEI) was investigated in the delivery of siRNA to NSCs. The characteristics of PEG-PEI/siRNA polyplexes were detected by scanning electron microscopy (SEM). The effects of nanoparticles on cell viability were measured via CCK-8 assay. In addition, the transfection efficiency was evaluated by fluorescence microscope and flow cytometry, and real-time PCR and Western Blot were employed to detect the gene inhibition effect of siRNA delivered by PEG-PEI. The SEM micrographs showed that PEG-PEI could condense siRNA to form diffuse and spherical nanoparticles. The cytotoxicity of PEG-PEI/siRNA nanocomplexes (N/P = 15) was significantly lower when compared with that of Lipofectamine 2000/siRNA (P < 0.05). Moreover, the highest transfection efficiency of PEG-PEI/siRNA nanoparticles was obtained at an N/P ratio of 15, which was better than that achieved in the transfection using Lipofectamine 2000 (P < 0.05). Finally, the gene knockdown effect of PEG-PEI/siRNA nanoparticles was verified at the levels of mRNA and protein. These results suggest that PEG-PEI may potentially be used as a siRNA delivery vector for neural regeneration therapy.

Liang, Yanran [Department of Neurology, Sun Yat-Sen Memorial Hospital of Sun Yat-Sen University, No. 107, West Yanjiang Road, Guangzhou 510120, People's Republic of China (China)] [Department of Neurology, Sun Yat-Sen Memorial Hospital of Sun Yat-Sen University, No. 107, West Yanjiang Road, Guangzhou 510120, People's Republic of China (China); Liu, Zhonglin, E-mail: zhonglinliu@126.com [Department of Neurology, Sun Yat-Sen Memorial Hospital of Sun Yat-Sen University, No. 107, West Yanjiang Road, Guangzhou 510120, People's Republic of China (China)] [Department of Neurology, Sun Yat-Sen Memorial Hospital of Sun Yat-Sen University, No. 107, West Yanjiang Road, Guangzhou 510120, People's Republic of China (China); Shuai, Xintao; Wang, Weiwei [School of Chemistry and Chemical Engineering, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China (China)] [School of Chemistry and Chemical Engineering, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China (China); Liu, Jun [Department of Neurology, Sun Yat-Sen Memorial Hospital of Sun Yat-Sen University, No. 107, West Yanjiang Road, Guangzhou 510120, People's Republic of China (China)] [Department of Neurology, Sun Yat-Sen Memorial Hospital of Sun Yat-Sen University, No. 107, West Yanjiang Road, Guangzhou 510120, People's Republic of China (China); Bi, Wei [Department of Neurology, The First Affiliated Hospital of Jinan University, No. 613, West Huangpu Road, Guangzhou 510630, People's Republic of China (China)] [Department of Neurology, The First Affiliated Hospital of Jinan University, No. 613, West Huangpu Road, Guangzhou 510630, People's Republic of China (China); Wang, Chuanming; Jing, Xiuna; Liu, Yunyun [Department of Neurology, Sun Yat-Sen Memorial Hospital of Sun Yat-Sen University, No. 107, West Yanjiang Road, Guangzhou 510120, People's Republic of China (China)] [Department of Neurology, Sun Yat-Sen Memorial Hospital of Sun Yat-Sen University, No. 107, West Yanjiang Road, Guangzhou 510120, People's Republic of China (China); Tao, Enxiang, E-mail: taoenxiang@yahoo.com.cn [Department of Neurology, Sun Yat-Sen Memorial Hospital of Sun Yat-Sen University, No. 107, West Yanjiang Road, Guangzhou 510120, People's Republic of China (China)] [Department of Neurology, Sun Yat-Sen Memorial Hospital of Sun Yat-Sen University, No. 107, West Yanjiang Road, Guangzhou 510120, People's Republic of China (China)

2012-05-18T23:59:59.000Z

462

Oxidation of SiC investigated by ellipsometry and Rutherford backscattering spectrometry  

SciTech Connect (OSTI)

Oxidation of SiC was performed in Ar-O{sub 2} mixture of atmospheric pressure at 1100 deg. C and compared with that of Si. The partial pressure of O{sub 2} varied from 100 to 1000 mbar, while the oxidation time ranged from 0.5 to 45 h. The thickness of the oxide films was determined by spectroscopic ellipsometry and Rutherford backscattering spectrometry. The time and the pressure dependence of the oxidation kinetics of SiC are well described by the modified Deal-Grove model. In the diffusion-limited region, even for the faster case, the oxidation kinetics of the C-terminated face of SiC is not clearly limited by oxygen indiffusion, as for pure silicon. To interpret the ellipsometry spectra, two models of possible structure were used. In the case of the one-layer model, for layer thicknesses above 30 nm, the refractive index of the oxide layers is identical to that of thermally oxidized Si, and it increases rapidly with decreasing thickness below about 15 nm. This increase is significantly larger for C-terminated than for Si-terminated faces, and this difference can be explained by a transition layer introduced into the two-layer model. This model contains a pure SiO{sub 2} layer and a transition layer modeled by a mixture of 50 % SiO{sub 2} and 50 % SiC. The transition layer is thicker on the C-terminated surface than on the Si-terminated one. The thickness ratio of the transition layers is slightly larger than the surface roughness ratio on the two different sides determined by atomic force microscopy. The density of the oxide films, which can be determined from the backscattering and spectroscopic ellipsometry spectra, decreases with decreasing thickness below about 30 nm. For thicker films, the density of the oxide is equal to the bulk density of SiO{sub 2}.

Szilagyi, E. [KFKI Research Institute for Particle and Nuclear Physics, P.O. Box 49, H-1525 Budapest (Hungary); Petrik, P.; Lohner, T.; Koos, A. A.; Fried, M.; Battistig, G. [Research Institute for Technical Physics and Materials Science, P.O. Box 49, H-1525 Budapest (Hungary)

2008-07-01T23:59:59.000Z

463

Integration of GaAsP alloys on SiGe virtual substrates for Si-based dual-junction solar cells  

E-Print Network [OSTI]

Integration of III-V compound semiconductors with silicon is an area that has generated a lot of interest because III-V materials and Si are best suited for different types of devices. Monolithic integration enables the ...

Sharma, Prithu

2013-01-01T23:59:59.000Z

464

Size-tunable strain engineering in Ge nanocrystals embedded within SiO{sub 2} and Si{sub 3}N{sub 4}  

SciTech Connect (OSTI)

We report a unique ability to control the sign and size of the stress within Ge nanocrystals or nanodots fabricated using a complementary metal-oxide-semiconductor-compatible process within SiO{sub 2} and Si{sub 3}N{sub 4} layers. Very large (as much as 4.5%), size-dependent compressive and tensile strains can be generated depending on whether the dot is embedded within either a Si{sub 3}N{sub 4} or a SiO{sub 2} layer. Raman measurements reveal significant anharmonicity for smaller Ge dots and possible distortions of the diamond cubic lattice as evidenced by the measured Grnesien parameters and confirmed by their transmission electron diffraction patterns. Two completely different mechanisms are proposed to explain the formation of the tensile and compressive strain states, respectively.

Liao, P. H.; Hsu, T. C.; Chen, K. H.; Wang, C. C.; Li, P. W., E-mail: pwli@ee.ncu.edu.tw [Department of Electrical Engineering and Center for Nano Science and Technology, National Central University, ChungLi 32001, Taiwan (China); Cheng, T. H.; Hsu, T. M. [Department of Physics, National Central University, ChungLi 32001, Taiwan (China); George, T. [Private Consultancy, Arcadia, California 91007 (United States)

2014-10-27T23:59:59.000Z

465

Control of threshold voltage on the excimer laser annealed poly-Si TFT`s by oxygen plasma treatment on poly-Si surface  

SciTech Connect (OSTI)

Oxygen plasma treatment was performed on the excimer laser annealed poly-Si surface, followed by gate oxide deposition with low pressure chemical vapor deposition (LPCVD) in order to control the threshold voltage of excimer laser annealed poly-Si thin film transistors (TFTs). Threshold voltages of n-channel TFTs increase from 0.4 to 2.8 V by varying the treatment time from 0 to 7 min. It is shown the effective charge density increased toward negative direction with increase of the treatment time. In addition to the increase of threshold voltage, the oxygen plasma treatment on the Si surface led to an increase in the deposition rate of LPCVD oxide films with an apparent reduction of carbon around the interface between gate insulator and poly-Si film after oxygen plasma treatment.

Woo, J.I.; Lee, S.G.; Moon, D.G.; Ha, Y.M.; Hong, C.H.; Soh, H.S. [LG Electronics Inc., Anyang, Kyongki (Korea, Republic of). LCD Research Lab.

1996-12-31T23:59:59.000Z

466

In situ observation of oxygen gettering by titanium overlayer on HfO{sub 2}/SiO{sub 2}/Si using high-resolution Rutherford backscattering spectroscopy  

SciTech Connect (OSTI)

Oxygen gettering by Ti overlayer (2-8 nm) on a HfO{sub 2}(3 nm)/SiO{sub 2}(1.5 nm)/Si(001) structure was investigated using high-resolution Rutherford backscattering spectroscopy. After deposition of a thin Ti layer, the interfacial SiO{sub 2} layer is reduced by {approx}0.2 nm and the released oxygen is incorporated in Ti layer. Subsequent annealing at 330 deg. C in UHV causes further reduction by 0.1-0.8 nm depending on the Ti layer thickness. In addition to the reduction of the SiO{sub 2} layer, significant oxygen depletion in the HfO{sub 2} layer was observed for thicker Ti layers after annealing.

Nakajima, Kaoru; Fujiyoshi, Akira; Ming, Zhao; Suzuki, Motofumi; Kimura, Kenji [Department of Micro Engineering, Kyoto University, Yoshida-Honmachi, Sakyo, Kyoto 606-8501 (Japan)

2007-09-15T23:59:59.000Z

467

Properties of planar Nb/{alpha}-Si/Nb Josephson junctions with various degrees of doping of the {alpha}-Si layer  

SciTech Connect (OSTI)

The properties of Nb/{alpha}-Si/Nb planar Josephson junctions with various degrees of doping of the amorphous silicon layer are experimentally studied. Tungsten is used as a doping impurity. The properties of the Josephson junctions are shown to change substantially when the degree of doping of the {alpha}-Si layer changes: a current transport mechanism and the shape of the current-voltage characteristic of the junctions change. Josephson junctions with SNS-type conduction are formed in the case of a fully degenerate {alpha}-Si layer. The properties of such junctions are described by a classical resistive model. Josephson junctions with a resonance mechanism of current transport through impurity centers are formed at a lower degree of doping of the {alpha}-Si layer. The high-frequency properties of such junctions are shown to change. The experimental results demonstrate that these junctions are close to SINIS-type Josephson junctions.

Gudkov, A. L., E-mail: gudkov@niifp.ru [Lukin Scientific Research Institute of Physical Problems, ZAO Kompelst (Russian Federation); Kupriyanov, M. Yu. [Moscow State University, Skobeltsyn Institute of Nuclear Physics (Russian Federation); Samus', A. N. [Lukin Scientific Research Institute of Physical Problems, ZAO Kompelst (Russian Federation)

2012-05-15T23:59:59.000Z

468

ARR/ARIES meeting, UW, May 3-4/99 Advanced ARIES-RS Using SiC/SiC as Structural  

E-Print Network [OSTI]

ARR/ARIES meeting, UW, May 3-4/99 Advanced ARIES-RS Using SiC/SiC as Structural Material A. Ren parameters: - Lowest He temp. in cycle (heat sink) = 35 C - Turbine efficiency = 0.93 - CompressorRejection HX Wnet Turbine Recuperator Blanket Intermediate HX 5' 1 2 2' 3 8 9 4 7' 9' 10 6 T S 1 2 3 4 5678 9

Raffray, A. Ren

469

Development of an improved performance SiGe unicouple  

SciTech Connect (OSTI)

A two-step diffusion bonding process was developed such that the p-type material is bonded to the SiMo hot shoe first at 1594 K followed by the lower melting point n-type material between 1518 and 1520 K. Standard procedures were used to silicon nitride coat the thermoelectric pellets and to attach the cold side CTE transition and heat rejection components to produce unicouples. Two unicouples successfully withstood simulated rivet operations as would be experienced in the fabrication of a Radioisotope Thermoelectric Generator (RTG) converter to verify the integrity of the tungsten cold shoe to thermoelectric material interface. The performance of these unicouples will be further evaluated in an 18-couple test module. {copyright}American Institute of Physics 1995

Nakahara, J.F.; Franklin, B.; DeFillipo, L.E. [Martin Marietta Astro Space, PO Box 8555, Room 29B12, Philadelphia, Pennsylvania 19101-8555 (United States)

1995-01-20T23:59:59.000Z

470

POLARIZED EMISSION FROM SiO MASERS IN IK Tauri  

SciTech Connect (OSTI)

We present high spatial and frequency resolution images of the SiO masers in Stokes I, Q, U, and V around the asymptotic giant branch star IK Tau and describe and exploit a new technique for making accurate calibration of Stokes V. This technique also resulted in improved images of Stokes I. An evaluation of the results suggests that the circular polarization is neither the result of Zeeman splitting nor an alternate propagation effect. The pattern of circular and linear polarization across the maser lines shows no tendency toward that expected for simple Zeeman splitting. The fractional circular polarization greatly exceeds that expected from the alternate mechanism. The overall shape of the masing ring has changed from the elliptical form repeatedly observed over the last decade and a half.

Cotton, W. D. [National Radio Astronomy Observatory, 520 Edgemont Road, Charlottesville, VA 22903-2475 (United States); Ragland, S. [W. M. Keck Observatory, 65-1120 Mamalahoa Hwy, Kamuela, HI 96743 (United States); Danchi, W. C., E-mail: bcotton@nrao.edu [NASA Goddard Space Flight Center, Exoplanets and Stellar Astrophysics, Code 667, Greenbelt, MD 20771 (United States)

2011-08-01T23:59:59.000Z

471

A conversion route towards tubular SiO{sub 2} using rod-like BaSiF{sub 6} as a novel template  

SciTech Connect (OSTI)

A simple hydrothermal reaction between Ba(NO{sub 3}){sub 2} and K{sub 2}SiF{sub 6} results in the formation of 1D rod-like BaSiF{sub 6}. The BaSiF{sub 6} rods can act as efficient precursors for production of tubular SiO{sub 2} by hydrothermal reaction in alkaline solutions. Powder X-ray diffraction (XRD), X-ray photoelectron spectra (XPS), transmission electron microscopy (TEM), high resolution electron microscopy (HRTEM), and field emission scanning electron microscopy (FESEM) were used to characterize the phase and morphology of the final product. The experiments indicated the amount of NaOH, reaction temperature, and reaction time played important roles in the transformation process. A possible growth mechanism of tubular silica was proposed. - Graphical abstract: Tubular silica was prepared via a hydrothermal reaction between BaSiF{sub 6} and NaOH, in which BaSiF{sub 6} nanorods act as both a physical and chemical template. It was found that the amount of NaOH, reaction temperature, and reaction time played important roles in this transformation process.

Zhong Haoxiang; Huang Qingli; Ma Yingli [Coordination Chemistry Institute, State Key Laboratory of Coordination Chemistry, Nanjing National Laboratory of Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093 (China); Hong Jianming [Analytic Center of Nanjing University, Jiangsu, Nanjing 210093 (China); Chen Xuetai, E-mail: xtchen@netra.nju.edu.c [Coordination Chemistry Institute, State Key Laboratory of Coordination Chemistry, Nanjing National Laboratory of Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093 (China); Xue Ziling [Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996-1600 (United States)

2009-07-15T23:59:59.000Z

472

Facile fabrication of three-dimensional mesoporous Si/SiC composites via one-step magnesiothermic reduction at relative low temperature  

SciTech Connect (OSTI)

Graphical abstract: - Highlights: The Si/SiC composites were synthesized by one-step magnesiothermic reduction. The mesoporous composites have a high specific surface area (655.7 m{sup 2} g{sup ?1}). The composites exhibited a strong photoluminescence and better biocompatibility. The mechanisms of formation and photoluminescence of sample were discussed. - Abstract: By converting modified silica aerogels to the corresponding silicon/silicon carbide (Si/SiC) without losing its nanostructure, three-dimensional mesoporous (3DM) Si/SiC composites are successfully synthesized via one-step magnesothermic reduction at relative low temperature (650 C). The phase composition and microstructure of the resulting samples are measured by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX), Raman spectra, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). N{sub 2}-sorption isotherms results show that the products have high BrunauerEmmettTeller (BET) specific surface areas (up to 656 m{sup 2} g{sup ?1}) and narrow pore-size distributions (1.530 nm). The composites exhibit a strong photoluminescence (PL) in blue-green light region (peak centered at 533 nm). We have set out work on the biocompatibility and enhancing PL of samples. As a result of excellent performances of the composites, it can be expected to have significant application in optoelectronics, biosensors, biological tracer and so on.

Jiang, Zhihang; Ma, Yongjun [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Zhou, Yong [Eco-materials and Renewable Energy Research Center (ERERC), School of Physics, National Lab of Solid State Microstructure, ERERC, Nanjing University, Nanjing 210093 (China); Hu, Shanglian [School of Life Science and Engineering, Southwest University of Science and Technology, Mianyang 621010 (China); Han, Chaojiang [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Pei, Chonghua, E-mail: peichonghua@swust.edu.cn [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China)

2013-10-15T23:59:59.000Z

473

Electronic structure of the Si(111):GaSe van der Waals-like surface termination  

E-Print Network [OSTI]

Electronic structure of the Si(111):GaSe van der Waals-like surface termination Reiner Rudolph-like surface termination has been determined by angle-resolved photoelectron spectroscopy using photons. This explains both the absence of a surface core-level shift in Si 2p photoelectron spectra of the terminated

Olmstead, Marjorie

474

Galvanic Deposition of Nanoporous Si onto 6061 Al Alloy from Aqueous HF  

E-Print Network [OSTI]

manuscript received November 4, 2010. Published December 3, 2010. While the market for photovoltaic cells advantages. In addition to photovoltaic applications, Si thin films are of interest for silicon the standard reduction potential of SiO2 -0.90 V vs normal hydrogen electrode NHE is more cathodic than

Suni, Ian Ivar

475

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes  

E-Print Network [OSTI]

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840GHz gain-absorption-charge- multiplication Ge/Si avalanche photodiode with an enhanced gain- bandwidth-product of 845GHz at a wavelength photodiodes (APDs) References and links 1. R. B. Emmons, "Avalanche photodiode frequency response," J. Appl

Bowers, John

476

Surface application of molybdenum silicide onto gated poly-Si emitters for enhanced field emission performance  

E-Print Network [OSTI]

the merits of molybdenum Mo silicide formation on gated polycrystalline silicon poly-Si field emitters. Metal, any metal silicide can be adopted without reSurface application of molybdenum silicide onto gated poly-Si emitters for enhanced field emission

Lee, Jong Duk

477

Hybrid solar cells based on porous Si and copper phthalocyanine derivatives  

E-Print Network [OSTI]

Hybrid solar cells based on porous Si and copper phthalocyanine derivatives I. A. Levitskya 25 October 2004) We demonstrate a solar cell based on n-type nanoporous Si (PSi) filled with copper of the PSi structure and pore filling on the solar cell performance is discussed. 2004 American Institute

Euler, William B.

478

Millimeter-wave Optoelectronic Mixers Based on CMOS-Compatible Si Photodetectors  

E-Print Network [OSTI]

Millimeter-wave Optoelectronic Mixers Based on CMOS-Compatible Si Photodetectors Hyo-Soon Kang-749, Korea Abstract -- We present millimeter-wave optoelectronic mixers based on Si photodetectors fabricated and optoelectronic mixer characteristics are investigated in order to optimize their performances. Using

Choi, Woo-Young

479

Precise half-life measurement of the superallowed beta(+) emitter (26)Si  

E-Print Network [OSTI]

We measured the half-life of the superallowed 0(+) -> 0(+) beta(+) emitter (26)Si to be 2245.3(7) ms. We used pure sources of (26)Si and employed a high-efficiency gas counter, whichwas sensitive to positrons from both this nuclide and its daughter...

Iacob, V. E.; Hardy, John C.; Banu, A.; Chen, L.; Golovko, V. V.; Goodwin, J.; Horvat, V.; Nica, N.; Park, H. I.; Trache, L.; Tribble, Robert E.

2010-01-01T23:59:59.000Z

480

Unique observations of a geomagnetic SI+ Solar sources and associated solar wind fluctuations  

E-Print Network [OSTI]

, arising entirely from nonexplosive solar events. [4] Though the very first observations, by the Mariner 2Unique observations of a geomagnetic SI+ - SI- pair: Solar sources and associated solar wind- pair was closely correlated with corresponding variations in the solar wind density, while solar wind

Padmanabhan, Janardhan

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Application of SiO2 aerogel film with low dielectric constant to intermetal dielectrics  

E-Print Network [OSTI]

Application of SiO2 aerogel film with low dielectric constant to intermetal dielectrics Moon-Ho Jo aerogel film was characterized from its structural and chemical viewpoints. High porosity of material infrared spectroscopy (FT-IR) for their chemical states. The improved electrical properties of SiO2 aerogel

Jo, Moon-Ho

482

Near-infrared femtosecond laser crystallized poly-Si thin film transistors  

E-Print Network [OSTI]

References and links 1. J. S. Im, H. J. Kim, and M. O. Thompson, "Phase transformation mechanisms involved annealing for shallow junction formation in Si power MOS devices," Thin Solid Films, 504, 2-6 (2006). 10. R, "High Performance Single Grain Si TFTs Inside a Location-Controlled Grain by -Czochralski Process

483

Room temperature 1.6 m electroluminescence from Ge light emitting diode on Si substrate  

E-Print Network [OSTI]

Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate Szu n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device.4670) Optical materials; (230.3670) Light-emitting diodes. References and links 1. L. C. Kimerling, "Silicon

Vuckovic, Jelena

484

Point defect engineered Si sub-bandgap light-emitting diode  

E-Print Network [OSTI]

Point defect engineered Si sub-bandgap light-emitting diode Jiming Bao1 , Malek Tabbal1,2 , Taegon light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction OCIS codes: (230.3670) Light-emitting diodes; (160.6000) Semiconductors; (130-0250) Optoelectronics

Bao, Jiming

485

One dimensional Si/Sn -based nanowires and nanotubes for lithium-ion energy storage materials  

E-Print Network [OSTI]

One dimensional Si/Sn - based nanowires and nanotubes for lithium-ion energy storage materials Nam of advanced energy storage applications. In this feature article, we review recent progress on Si-based NWs to their uneven energy production. From this perspective, the interest in energy storage technology is on the rise

Cui, Yi

486

Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche  

E-Print Network [OSTI]

-speed InP /InGaAsP /InGaAs avalanche photodiodes grown by chemical beam epitaxy," IEEE J. Quantum ElectronResonant normal-incidence separate-absorption- charge-multiplication Ge/Si avalanche photodiodes the impedance of separate-absorption-charge- multiplication Ge/Si avalanche photodiodes (APD) is characterized

Bowers, John

487

Direct fabrication of graphene on SiO[subscript 2] enabled by thin film stress engineering  

E-Print Network [OSTI]

We demonstrate direct production of graphene on SiO[subscript 2] by CVD growth of graphene at the interface between a Ni film and the SiO[subscript 2] substrate, followed by dry mechanical delamination of the Ni using ...

McNerny, Daniel Q.

488

Method of preparing (CH.sub.3).sub.3 SiNSO and byproducts thereof  

DOE Patents [OSTI]

(CH.sub.3).sub.3 SiNSO is produced by the reaction of ((CH.sub.3).sub.3 Si).sub.2 NH with SO.sub.2. Also produced in the reaction are ((CH.sub.3).sub.3 Si).sub.2 O and a new solid compound [NH.sub.4 ][(CH.sub.3).sub.3 SiOSO.sub.2 ]. Both (CH.sub.3).sub.3 SiNSO and [NH.sub.4 ][(CH.sub.3).sub.3 SiOSO.sub.2 ] have fluorescent properties. The reaction of the subject invention is used in a method of measuring the concentration of SO.sub.2 pollutants in gases. By the method, a sample of gas is bubbled through a solution of ((CH.sub.3).sub.3 Si).sub.2 NH, whereby any SO.sub.2 present in the gas will react to produce the two fluorescent products. The measured fluorescence of these products can then be used to calculate the concentration of SO.sub.2 in the original gas sample. The solid product [NH.sub.4 ][(CH.sub.3).sub.3 SiOSO.sub.2 ] may be used as a standard in solid state NMR spectroscopy.

Spicer, Leonard D. (Salt Lake City, UT); Bennett, Dennis W. (Clemson, SC); Davis, Jon F. (Salt Lake City, UT)

1984-01-01T23:59:59.000Z

489

High-performance Si microwire photovoltaics Michael D. Kelzenberg,a  

E-Print Network [OSTI]

High-performance Si microwire photovoltaics Michael D. Kelzenberg,a Daniel B. Turner-Evans,a Morgan for low- cost, thin-film photovoltaics. Here, we demonstrate VLS-grown Si microwires that have suitable electrical properties for high-perfor- mance photovoltaic applications, including long minority

Atwater, Harry

490

Measurementof Seebeck coefficient perpendicular to SiGe superlattice , Gehang Zeng2  

E-Print Network [OSTI]

of integration and packaging3 . Conventional Si or III-V based semiconductor materials have a low thermoelectric-plan thermal conductivity, electrical conductivity of SiGe superlattice5,6,7,8 . There are still very few; : electrical resistivity; KT: Thermal conductivity12 . Experiments The micro-cooler structure is based on cross

491

Graphene on Carbon-face SiC{0001} Surfaces Formed in a Disilane Environment  

E-Print Network [OSTI]

Graphene on Carbon-face SiC{0001} Surfaces Formed in a Disilane Environment N. Srivastavaa , Guowei-face, graphene, interface structure, low energy electron microscopy, disilane Abstract. The formation of epitaxial graphene on SiC( 1000 ) in a disilane environment is studied. The higher graphitization

Feenstra, Randall

492

Surface kinetics and plasma equipment model for Si etching by fluorocarbon plasmas  

E-Print Network [OSTI]

Surface kinetics and plasma equipment model for Si etching by fluorocarbon plasmas Da Zhanga of fluorocarbon radicals on the reactor walls, polymer erosion rates and F atom diffusion through the polymer during Si etching using fluorocarbon gases in an induc- tively coupled plasma ICP reactor.4 They observed

Kushner, Mark

493

MOTION PLANNING CONTROL OF THE AIRPATH OF AN S.I. ENGINE WITH VALVE  

E-Print Network [OSTI]

to controlling the air mass aspirated in the cylinder. Besides, it is also desired to reduce engine pollutantMOTION PLANNING CONTROL OF THE AIRPATH OF AN S.I. ENGINE WITH VALVE TIMING ACTUATORS T. Leroy , J, France Abstract: We address the control of the airpath of a turbocharged S.I. engine equipped

Boyer, Edmond

494

Infrared absorption of n-type tensile-strained Ge-on-Si  

E-Print Network [OSTI]

We analyze the IR absorption of tensile-strained, n-type Ge for Si-compatible laser applications. A strong intervalley scattering from the indirect L valleys to the direct ? valley in n[superscript +] Ge-on-Si is reported ...

Wang, Xiaoxin

495

Effect of high temperature deposition on CoSi{sub 2} phase formation  

SciTech Connect (OSTI)

This paper discusses the nucleation behaviour of the CoSi to CoSi{sub 2} transformation from cobalt silicide thin films grown by deposition at elevated substrate temperatures ranging from 375 Degree-Sign C to 600 Degree-Sign C. A combination of channelling, real-time Rutherford backscattering spectrometry, real-time x-ray diffraction, and transmission electron microscopy was used to investigate the effect of the deposition temperature on the subsequent formation temperature of CoSi{sub 2}, its growth behaviour, and the epitaxial quality of the CoSi{sub 2} thus formed. The temperature at which deposition took place was observed to exert a significant and systematic influence on both the formation temperature of CoSi{sub 2} and its growth mechanism. CoSi films grown at the lowest temperatures were found to increase the CoSi{sub 2} nucleation temperature above that of CoSi{sub 2} grown by conventional solid phase reaction, whereas the higher deposition temperatures reduced the nucleation temperature significantly. In addition, a systematic change in growth mechanism of the subsequent CoSi{sub 2} growth occurs as a function of deposition temperature. First, the CoSi{sub 2} growth rate from films grown at the lower reactive deposition temperatures is substantially lower than that grown at higher reactive deposition temperatures, even though the onset of growth occurs at a higher temperature, Second, for deposition temperatures below 450 Degree-Sign C, the growth appears columnar, indicating nucleation controlled growth. Elevated deposition temperatures, on the other hand, render the CoSi{sub 2} formation process layer-by-layer which indicates enhanced nucleation of the CoSi{sub 2} and diffusion controlled growth. Our results further indicate that this observed trend is most likely related to stress and changes in microstructure introduced during reactive deposition of the CoSi film. The deposition temperature therefore provides a handle to tune the CoSi{sub 2} growth mechanism.

Comrie, C. M. [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa) [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa); MRD, iThemba LABS, P.O. Box 722, Somerset West 7129 (South Africa); Ahmed, H. [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa)] [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa); Smeets, D.; Demeulemeester, J.; Vantomme, A. [Instituut voor Kern- en Stralingsfysica, KU Leuven, B-3001 Leuven (Belgium)] [Instituut voor Kern- en Stralingsfysica, KU Leuven, B-3001 Leuven (Belgium); Turner, S.; Van Tendeloo, G. [EMAT, Universiteit Antwerpen, B-2020 Antwerpen (Belgium)] [EMAT, Universiteit Antwerpen, B-2020 Antwerpen (Belgium); Detavernier, C. [Vakgroep Vaste-Stofwetenschappen, Universiteit Gent, B-9000 Gent (Belgium)] [Vakgroep Vaste-Stofwetenschappen, Universiteit Gent, B-9000 Gent (Belgium)

2013-06-21T23:59:59.000Z

496

Heat Pipe Embedded AlSiC Plates for High Conductivity - Low CTE Heat Spreaders  

SciTech Connect (OSTI)

Heat pipe embedded aluminum silicon carbide (AlSiC) plates are innovative heat spreaders that provide high thermal conductivity and low coefficient of thermal expansion (CTE). Since heat pipes are two phase devices, they demonstrate effective thermal conductivities ranging between 50,000 and 200,000 W/m-K, depending on the heat pipe length. Installing heat pipes into an AlSiC plate dramatically increases the plates effective thermal conductivity. AlSiC plates alone have a thermal conductivity of roughly 200 W/m-K and a CTE ranging from 7-12 ppm/ deg C, similar to that of silicon. An equivalent sized heat pipe embedded AlSiC plate has effective thermal conductivity ranging from 400 to 500 W/m-K and retains the CTE of AlSiC.

Johnson, Matthew (DOE/NNSA Kansas City Plant (United States)); Weyant, J.; Garner, S. (Advanced Cooling Technologies, Inc. (Lancaster, PA (United States)); Occhionero, M. (CPS Technologies Corporation, Norton, MA (United States))

2010-01-07T23:59:59.000Z

497

Pitting Corrosion in CVD SiC at 300?C in Deoxygenated High-Purity Water  

SciTech Connect (OSTI)

SiC is a candidate for nuclear applications at elevated temperatures but has not been fully studied under typical light-water reactor operating conditions, such as moderate temperatures and high pressures. Coupons of high-purity chemical vapor deposited SiC were exposed to deoxygenated, pressurized water at 573K and 100 Bar for up to 4000 hours. Ceramographic examination of the exposed SiC surfaces revealed both embryonic and large, d > 300 m, pits on the surface. The pits were characterized using scanning electron microscopy for structure and chemistry analysis. Pit densities were also determined by standard counting methods. The chemical analysis revealed that the pits are associated with the formation of silica and subsequent loss of Si, which is expected due to several suggested reactions between SiC and water.

Henager, Charles H.; Schemer-Kohrn, Alan L.; Pitman, Stan G.; Senor, David J.; Geelhood, Ken J.; Painter, Chad L.

2008-08-15T23:59:59.000Z

498

Model of U3Si2 Fuel System using BISON Fuel Code  

SciTech Connect (OSTI)

This research considers the proposed advanced fuel system: U3Si2 combined with an advanced cladding. U3Si2 has a number of advantageous thermophysical properties, which motivate its use as an accident tolerant fuel. This preliminary model evaluates the behavior of U3Si2 using available thermophysical data to predict the cladding-fuel pellet temperature and stress using the fuel performance code: BISON. The preliminary results obtained from the U3Si2 fuel model describe the mechanism of Pellet-Clad Mechanical Interaction for this system while more extensive testing including creep testing of U3Si2 is planned for improved understanding of thermophysical properties for predicting fuel performance.

K. E. Metzger; T. W. Knight; R. L. Williamson

2014-04-01T23:59:59.000Z

499

Effects of in situ fiber strength characteristics on mechanical properties of SiC(f)/SiC composites  

SciTech Connect (OSTI)

Nicalon-fiber-reinforced silicon carbide (SiC) matrix composites were tested in flexure at room and elevated temperatures. The measured strength of composites decreased slightly from a room temperature value of 400 MPa to 380 MPa at 1200{degrees}C. However, at 1300{degrees}C strength decreased significantly to 290 Mpa. The rapid decrease in strength over 1300{degrees}C is believed to be due to degradation in strength of the reinforcing fibers. In situ fiber strength and fiber pullout distribution in fractured composites were estimated by fractographic techniques. Correlations were made between the measured strengths of composites to the in situ fiber strength characteristics to explain the mechanical properties of composites at room and elevated temperatures.

Singh, D.; Singh, J.P.; Wheeler, M.J.

1994-06-01T23:59:59.000Z

500

Effects of high-temperature environments on flaw generation and fracture behavior of SiC/SiC composites  

SciTech Connect (OSTI)

Flaw generation and fracture behavior of Nicalon-fiber-reinforced SiC matrix composites are influenced by high temperatures. Therefore, the authors evaluated the effects of temperature by measuring the strength of these composites at several temperatures ranging from 800 to 1,300 C, and by characterizing their microstructure. While composite strength increased from {approx}400 MPa at room temperature to {approx}532 MPa at 800 C, it decreased to {approx}270 MPa at 1,300 C. Such degradation of composite strength at high temperature is believed to be partly due to fiber degradation. In-situ fiber strength of composites tested at room and elevated temperatures was estimated by fractographic techniques. The in-situ strength of fibers in composites was significantly lower than that of as-received fibers. This decrease is believed to be related to flaws that develop during processing and to exposure to elevated-temperature service environments.

Singh, J.P.; Singh, D. [Argonne National Lab., IL (United States). Energy Technology Div.

1995-02-01T23:59:59.000Z