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Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

CUSSSFIC4TION CMUXLLq  

Office of Legacy Management (LM)

CUSSSFIC4TION CMUXLLq CUSSSFIC4TION CMUXLLq RITE AUG 1 7 1962 Fcx the Atomic. Energy Commisaion~ Chief. Declaseifle@tlon Brar\qh F-mm A. B. Grsaingsr (Other ends tifmtioel) The die wae foutq3 to workvery satiafactorilywiti thlanew Qpeof incert, andncm,of tbepmvLouedsfeotaofeoo+tH&' iOitYwaslmd. D&e& ._: . . ..YG ~Kl.3. i>ro;rid3 -&I:: clcsuro on bct.k.mds of the .plece m & Die #l, is also to be tried outoo 4zgust22. Barr~l~or~~~Die~~hadalaobeenawlLfiedta' plwidesd~do~- rwrdaM,thatSibs.of~~oouldbe~etoflow~gbtheLliearoundtbe surface of the wend overf'lo~lnto abarrel lvcatedundemeath the die. Under th?3e conditions "b8rre.l type' aaatjngs sere made with hardly any plvmure at all andrefaulthg ooatiiage were,of mums, vergporousand~eot. However, the

2

The SpallaTion  

Broader source: Energy.gov (indexed) [DOE]

SpallaTion neuTron Source projecT When the Department of Energy (DOE) set out in the 1990s to develop a neutron scattering research facility that was ten times more powerful than the state of the art, the concept for the project that it chose was as ambitious as the scientific capability it sought to deliver. The Spallation Neutron Source (SNS) Project called for unprecedented collaboration among six national laboratories as well as significant

3

si  

Office of Legacy Management (LM)

si si :ri; .-.- ..~ -- The Orrk R&e Ins@@& for Science aud EduWion (ORISE) was established by the U.S. Department of Energy to undertake national aud international programs in science and engineering education, training and management systems, energy and environment systems, and medical sciences. ORISE and its programs are operated by Oak Ridge Associated Universities (ORAU) through a management and operating contract with the U.S. Department of Energy. Established in 1946, ORAU is a consortium of 65 colleges and universities. NOTICES The opinions expresssd herein do not necessarily reflect the opinions of the sponsoring institutions of Oak Ridge Associated Universidss. This report was prepared as an account of work sponsored by the United States Government. Neither the United States

4

UTICA 4, NEW YORK COFIPOR~TION  

Office of Legacy Management (LM)

DROf fORGE & TOOL DROf fORGE & TOOL UTICA 4, NEW YORK COFIPOR~TION PHONE 3- 2331 July 5, 1955 ?:r. E. J. Block Director of Production Division United Staton Atomic ::norgy Commission Yiashington, D. C. Dear Xr. 1310~1~: Xe had a visit last Thursday from Kr. R. C. Sale11 of the: Atomic Energy Commission who inspected our vacuum melting facilities. EIz suggested that we should get in touch with you and that you r+ht be interested in the use of our facilities for the i>roduction of uranium fuel elements. Xe have at the present time the largest coxnercial vacuum installation in the country and m have been producin; high tc~poraturc alloys for the aircraft industry for over txro 'years. ;Is have produced to date Over 400,000 pounds of mtal. Our present rate of production is of the order

5

Semiconducting chalcogenide buffer layer for oxide heteroepitaxy on Si,,001...  

E-Print Network [OSTI]

controlled laminar growth of a crystalline transition metal oxide on Si 001 without SiOx or silicide/or silicides at the Si/oxide interface. Subnanometer buffer layers can prevent interface reac- tions while, also enables flexible strain relief. We observe nei- ther oxide nor silicide formation at the buried Si

Olmstead, Marjorie

6

SANDIA COKPOK4TION SANDIA BASE, .QLDUQUERQUE. N. M.  

Office of Legacy Management (LM)

SANDIA COKPOK4TION SANDIA COKPOK4TION SANDIA BASE, .QLDUQUERQUE. N. M. To : DISTRIBUTION Re: Disposition of t h e Shoal S i t e Attached herewith i s a study which has been made s w g e s t i n g p o s s i b l e f u r t h e r uses of t h e Shoal S i t e . I - ! e have a l s o b r i e f l y described how permanent d i s p o s i t i o n might be made. The study has been made with t h e hope t h a t it w i l l evolce f u r t h e r considerc~tion of t h e s i t e and l e a d t o a plan f o r continued use and eventual d i s p o s i t i o n . W i l l you please review t h e study and forward your comments and any o t h e r suggestions f o r t h e s i t e . Your r e p l i e s w i l l be used t o help formulate a f i n a l d i s p o s i t i o n plan. Copy t o : Brig. Cen. D. L. Crowson, D M , \.lash., D. C. Attn: Lt. Col. W . C. H a l l < < J. 3. Reeves, ivkr. I ' A C - W O O R. E. Piiller, P S C - W O O : a ! . W . t

7

Trans Tech Green Power | Open Energy Information  

Open Energy Info (EERE)

Green Power Jump to: navigation, search Name: Trans Tech Green Power Place: India Sector: Biomass Product: Plans to develop biomass projects in Rajasthan. References: Trans Tech...

8

EERE PROJECT MANAGEMENT CENTER NEPA DETTIUlIIN .... TION PROJECT  

Broader source: Energy.gov (indexed) [DOE]

Chicago Chicago u.s. DEP .... RTIIIENT OF ENERGY EERE PROJECT MANAGEMENT CENTER NEPA DETTIUlIIN .... TION PROJECT TITLE: Chicago Climate Action Plan Advanced Transportation Technologies Initiative STATE: IL Funding Opportunity Announcement Number nla Procurement Instrument Number DE-FG3&-060860S2 NEPA Control Number GFO-G086052-001 Page 1 of2 ClD Number G086052 Based on my review oftbe information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 4S1.1A), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 65.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical

9

TransWest Express Transmission Project  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

operate, maintain and decommission the TransWest Express 600-kV Direct Current Transmission Project. TransWest Express, LLC is a whollyowned subsidiary of the Anschutz...

10

Trans-Atlantic Telephone Cable  

Science Journals Connector (OSTI)

... and Telegraph Co. of Canada, for the provision of the first trans -Atlantic telephone cable, as distinct from the existing telegraph ... , as distinct from the existing telegraph cables. The installation, which is estimated to cost £12-J million, is likely to ...

1953-12-19T23:59:59.000Z

11

TransAtlas | Open Energy Information  

Open Energy Info (EERE)

TransAtlas TransAtlas Jump to: navigation, search Tool Summary Name: TransAtlas Agency/Company /Organization: National Renewable Energy Laboratory Sector: Energy Focus Area: Fuels & Efficiency, Transportation Phase: Determine Baseline, Evaluate Options, Develop Goals, Prepare a Plan, Evaluate Effectiveness and Revise as Needed Topics: Analysis Tools Resource Type: Dataset, Maps User Interface: Website Website: maps.nrel.gov/transatlas Cost: Free OpenEI Keyword(s): Energy Efficiency and Renewable Energy (EERE) Tools References: National Renewable Energy Laboratory Advanced Vehicles and Fuels Research: Data and Resources[1] Logo: TransAtlas TransAtlas is an interactive map with data sets related to transportation and alternative fuels in the United States How to Use This Tool

12

Robustness of TransEuropean Gas Networks: The Hot Backbone Rui Carvalho, 1, # Lubos Buzna, 2, 3, + Flavio Bono, 4, # Eugenio Gutierrez, 4 Wolfram Just, 1 and David Arrowsmith 1  

E-Print Network [OSTI]

instead of oil for transporta­ tion [2], and gas­fired power plants are responsible for the production in overall CO 2 emissions, the generation of elec­ tricity from natural gas instead of coal can significantlyRobustness of Trans­European Gas Networks: The Hot Backbone Rui Carvalho, 1, # Lubos Buzna, 2, 3

Wright, Francis

13

Cooperative Spectrum Sensing and Localiza-tion in Cognitive Radio Systems using Com-  

E-Print Network [OSTI]

Cooperative Spectrum Sensing and Localiza- tion in Cognitive Radio Systems using Com- pressed features in cog- nitive radio systems (CRS): spectrum sensing and location awareness in a single compressed implementing a cognitive radio system. The major problem for spectrum sensing arises in wideband radio, when

Gesbert, David

14

China For all ages a MulTi-generaTional exPloraTion  

E-Print Network [OSTI]

China For all ages a MulTi-generaTional exPloraTion The greaT Wall, TerraCoTTa Warriors & The MighCTuresque China Experience the Delights of a Well-Crafted Family Tour Dear Princetonian, Join Princeton Journeys, June 27 ­ July 9, 2013, for a comprehensive tour of China designed with families in mind. Explore

Rowley, Clarence W.

15

SEASONAL V A R IA TIONS IN STRUCTURE AND CIRCULATION IN THE RED SEA  

E-Print Network [OSTI]

SEASONAL V A R IA TIONS IN STRUCTURE AND CIRCULATION IN THE RED SEA A DISSERTATION SUBMITTE D and surface circulation in the Red Sea, occur r ing along the north-south axis of the Sea and extending fr om on in the northern Red Sea is frorn the nor th-northwest throughout the year' during the winter ( fr om October

Luther, Douglas S.

16

Tag der InnovaTIon Fokus WerksToFFWIssenschaFTen  

E-Print Network [OSTI]

Tag der InnovaTIon Fokus WerksToFFWIssenschaFTen auFTakTveransTalTung zur MITarbe erfolg. ein beitrag dazu soll der,,Tag der Innovation ­ Fokus Werkstoffwissenschaften" sein, der am 26 des zentralinstitutes für neue Materialien und Prozesstechnik und des Fraunhofer-Institutes ezr

Fiebig, Peter

17

analogies to proteins as a func-tion of nanoparticle size and  

E-Print Network [OSTI]

analogies to proteins as a func- tion of nanoparticle size and surface charge, and lipid composition and phase state. The focus will be on engineered nanoparticles common to environmental and biomedical applications, and examples will be provided where fundamental knowledge of nanoparticle

Subramanian, Venkat

18

trans-Bis(4-quinolyl)ethylene  

Science Journals Connector (OSTI)

The title compound belongs to the class of styrylquinolines which are of interest because of their photochemical behaviour. The central double bond is trans configured and the two quinoline rings form similar angles with the plane of the double bond.

Jerdioui, B.

1999-12-15T23:59:59.000Z

19

TransWest Old | Open Energy Information  

Open Energy Info (EERE)

TransWest Old TransWest Old Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home NEPA Document Collection for: TransWest Old EIS at {{{GeothermalArea}}} for {{{GeothermalDevelopmentPhases}}} {{{NEPA_Name}}} General NEPA Document Info Environmental Analysis Type EIS Applicant Geothermal Area {{{GeothermalArea}}}"{{{GeothermalArea}}}" cannot be used as a page name in this wiki. Project Location Project Phase Techniques Time Frame (days) Participating Agencies Lead Agency none provided Funding Agency none provided Managing District Office none provided Managing Field Office none provided Funding Agencies none provided Surface Manager none provided Mineral Manager none provided Selected Dates Relevant Numbers Lead Agency Doc Number Retrieved from "http://en.openei.org/w/index.php?title=TransWest_Old&oldid=686707"

20

TRAN-STAR EXECUTIVE LIMOUSINE COMPANY  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

TRAN-STAR EXECUTIVE LIMOUSINE COMPANY TRAN-STAR EXECUTIVE LIMOUSINE COMPANY http://www.tranexec.com 20% off published rates for BNL Our reservation center is open 24 hours a day, 365 days a year, so you will always talk to a live agent who has direct contact with our chauffeurs. You can make reservations via phone, website or a simple e-mail to customerservice@tranexec.com once a profile has been established. Our advanced reservation system will track any flight and you can rest assured someone will always be there to meet the arriving passenger, no matter what time the flight arrives. http://www.tranexec.com/TranStarSalesBrochure.pdf These rates are inclusive rates, meaning they include gratuity, taxes....everything. They do not include parking or tolls

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

SensorTran | Open Energy Information  

Open Energy Info (EERE)

SensorTran SensorTran Jump to: navigation, search Name SensorTran Place Austin, Texas Zip 78701 Product Austin, Texas-based designer of fibre optic-based Distributed Temperature Sensing (DTS) systems and solutions for the energy industry, with applications in asset and environmental monitoring. Coordinates 30.267605°, -97.742984° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":30.267605,"lon":-97.742984,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

22

TransAtlantic Petroleum | Open Energy Information  

Open Energy Info (EERE)

TransAtlantic Petroleum TransAtlantic Petroleum Jump to: navigation, search Logo: TransAtlantic Petroleum Name TransAtlantic Petroleum Address 5910 N. Central Expressway Place Dallas, Texas Zip 75206 Product acquisition, development, exploration, and production of crude oil and natural gas. Stock Symbol TAT Year founded 1985 Phone number 214-220-4323 Website http://www.transatlanticpetrol Coordinates 32.837335°, -96.777462° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":32.837335,"lon":-96.777462,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

23

EA-262 TransCanada Power Marketing Ltd | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

TransCanada Power Marketing Ltd EA-262 TransCanada Power Marketing Ltd Order authorizing TransCanada Power Marketing Ltd to export electric energy to Canada. EA-262 TransCanada...

24

STATEM ENT OF CONSIDER TIONS CLASS WAIVER OF TH E GOVERNMENT'S DOMESTIC AN  

Broader source: Energy.gov (indexed) [DOE]

STATEM STATEM ENT OF CONSIDER TIONS CLASS WAIVER OF TH E GOVERNMENT'S DOMESTIC AN D FO REIGN PATENT RIGHTS AND ALLOCATION OF DATA RIGHTS ARJSING FROM TI-lE:: USE OF DOE FACJLJTIES AND FACIL ITY CONT'l~ACTORS BY OR FOR THIR D PARTY FUND ING SPONSORS UNDER AGREEMENTS FO R COMMERCIALIZING TECHNOLOGY (ACT): DOE WAIVER NO. W(C)-201 l-013 The D..:partrnent of Energ.} (and its predecessor agencies) (col lectively. ''DO E" or · Department") considers each or its DO E Facilities (i.e., Nati onal Laboratories. single-purpose research fac ilities. and other Department facili ties, hereinafter referred to individually as ·'Facil ity" or collect ively as '·Facilities'') to be a unique and valuab le national resource that should be made avail· ble to the extent fea

25

Argonne Transportation - TransForum Volume 1  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

TransForum: Volume 1 TransForum: Volume 1 ISSN 2156-3594 (Print) ISSN 2156-373X (Online) Vol. 1, No. 4, Winter 1998-99 (966k pdf ) Energy Secretary Dedicates Argonne's Transportation Center: New Technology Promises Cleaner Diesels Measuring How Fuel Cell Stack Up Vol. 1, No. 3, Summer 1998 (684k pdf ) Using Corn to Fuel Your Car: A Good Environmental Choice? If You Can't Stand the Heat ... Call Argonne Modeling Cars Isn't Just Child's Play Lilliputian Sensors Could Help Solve a Gigantic Pollution Problem Making a Material Difference in Advanced Batteries Vol. 1, No. 2, Spring 1998 (577k pdf ) Gearing Up for HEV Powertrain Design Taking a Closer Look into How Batteries and Fuel Cells Work ITS Makes Life in the Fast Lane Easier "Wrapping It Up to Go": Transporting Hazardous and Radioactive Materials Safely

26

Deseret Generation & Tran Coop (Colorado) | Open Energy Information  

Open Energy Info (EERE)

Coop (Colorado) Jump to: navigation, search Name: Deseret Generation & Tran Coop Place: Colorado References: EIA Form EIA-861 Final Data File for 2010 - File220101 EIA Form 861...

27

The GraduaTe school of educaTion newsleTTer | suMMer 2013 Project learn  

E-Print Network [OSTI]

The The GraduaTe school of educaTion newsleTTer | suMMer 2013 Project learn: Vision to Reality . . . One Project at a Time continued on page 3 f or the second year, Dr. Erin Washburn, from Project LEARN, along with the Windsor Central School District and the Liberty Partnership Program (LPP) at Binghamton

Suzuki, Masatsugu

28

Use of pectino-cellulolytic enzymes for improving extrac-tion of phloem-limited plant viruses as exemplified by  

E-Print Network [OSTI]

Use of pectino-cellulolytic enzymes for improving extrac- tion of phloem-limited plant viruses-persistent manner ; it has been successfully purified using pectino-cellulolytic enzymes. The enzymes (driselaseH 6 along with enzyme or a mixture of enzymes and incubated with shaking. The filtrate was adjusted

Paris-Sud XI, Université de

29

Summary We examined the effects of increased transpira-tion demand on xylem hydraulic conductivity and vulnerabil-  

E-Print Network [OSTI]

in response to high evaporative demand and prevent xylem tensions from reaching values that cause catastrophicSummary We examined the effects of increased transpira- tion demand on xylem hydraulic conductivity potential and water potential differences between the soil and the shoot were similar for desert and montane

Maherali, Hafiz

30

Quand les TIC russissent trop bien dans les organisa-tions : le cas du courrier lectronique chez les managers  

E-Print Network [OSTI]

Quand les TIC réussissent trop bien dans les organisa- tions : le cas du courrier électronique chez dès lors comme un objet de recherche approprié pour étudier la problématique darticulation des TIC un point nodal structurant dans le portefeuille technologique des managers. Mots clefs : TIC

Paris-Sud XI, Université de

31

Volume 83, number 1 CHEMICAL PKYSICS LEZTERS 1 October 1981 BASIS SET CONSIDERATIONS FOR THE CALCULA TION OF GRADIENTS  

E-Print Network [OSTI]

FOR THE CALCULA TION OF GRADIENTS IN THE LCAO FORMALISM Jan ALMLGF and Trygve HELGAKER Department of Ghemist In these expressions, h and g( 1.2) are the one- and &Vo-eleCtrOnparts Of the hamiltonian, `&i and rii,,k[ are the fit

Helgaker, Trygve

32

The newesT addiTion To The UniversiTy of MinnesoTa's BioMedical  

E-Print Network [OSTI]

The newesT addiTion To The UniversiTy of MinnesoTa's BioMedical discovery disTricT is designed The BUilding's collegial and physical relaTionship To neighBoring faciliTies in The U's BioMedical discovery in the U's Biomedical Discovery District. "The brick, precast concrete, and curtain wall vocabulary

Weiblen, George D

33

Trans-Fast MHD Winds in a Pulsar Magnetosphere  

Science Journals Connector (OSTI)

......on the (x,^p)-diagram. That is, a trans-fast MHD wind solution is capable...magnetic field on the MHD wind structure while...on the (rr, up)-diagram and the N = 0 loop always...is, the trans-fast MHD wind solution is always......

Masaaki Takahashi; Shinpei Shibata

1998-04-01T23:59:59.000Z

34

EA-216 TransAlta Energy Marketing (U.S) Inc | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

TransAlta Energy Marketing (U.S) Inc EA-216 TransAlta Energy Marketing (U.S) Inc Order authorizing TransAlta Energy Marketing (U.S) Inc to export electric energy to Canada. EA-216...

35

EA-216-C TransAlta Energy Marketing (U.S.)Inc. | Department of...  

Broader source: Energy.gov (indexed) [DOE]

C TransAlta Energy Marketing (U.S.)Inc. EA-216-C TransAlta Energy Marketing (U.S.)Inc. Order authorizing TransAlta Energy Marketing (U.S.) Inc to export electric energy to Canada....

36

EA-216-B TransAlta Energy Marketing (U.S) Inc | Department of...  

Broader source: Energy.gov (indexed) [DOE]

B TransAlta Energy Marketing (U.S) Inc EA-216-B TransAlta Energy Marketing (U.S) Inc Order authorizing TransAlta Energy Marketing (U.S) Inc to export electric energy to Canada....

37

EA-262-B TransCanada Power Marketing Ltd | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

B TransCanada Power Marketing Ltd EA-262-B TransCanada Power Marketing Ltd Order authorizing TransCanada Power Marketing Ltd to export electric energy to Canada. EA-262-B...

38

EA-262-A TransCanada Power Marketing Ltd | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

A TransCanada Power Marketing Ltd EA-262-A TransCanada Power Marketing Ltd Order authorizing TransCanada Power Marketing Ltd to export electric energy to Canada. EA-262-A...

39

EA-262-C TransCanada Power Marketing Ltd | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

C TransCanada Power Marketing Ltd EA-262-C TransCanada Power Marketing Ltd Order authorizing TransCanada Power Marketing Ltd to export electric energy to Canada. EA-262-C...

40

Using HyTrans to Study H2 Transition Scenarios  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Using HyTrans Using HyTrans to Study H2 Transition Scenarios David Greene & Paul Leiby Oak Ridge National Laboratory Elzbieta Tworek Univ. of Tennessee & StrataG David Bowman Consultant DOE Hydrogen Transition Analysis Workshop January 26, 2006 Washington, DC OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY We will try to cover 4 topics in ½ hour because what we want is your input. 1. What is HyTrans? 2. What can it do? 1. Previous analyses 2. Initial early transition runs 3. What improvements are needed for realistic early transition analysis? 4. How will we interface with NREL's detailed GIS analyses? OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY 1. What is HyTrans? OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY HyTrans is a national (regional) model of the market

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Massachusetts Bay Trans Auth | Open Energy Information  

Open Energy Info (EERE)

Auth Auth Jump to: navigation, search Name Massachusetts Bay Trans Auth Place Massachusetts Utility Id 49848 Utility Location Yes Ownership P NERC Location NPCC NERC NPCC Yes Operates Generating Plant Yes Activity Generation Yes Activity Wholesale Marketing Yes Activity Retail Marketing Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png No rate schedules available. Average Rates Commercial: $0.0896/kWh Transportation: $0.1250/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from

42

Acid-Based Synthesis of Monodisperse Rare-Earth-Doped Colloidal SiO2 Spheres  

E-Print Network [OSTI]

display narrow-line intra-4f transi- tions that are first order independent of the local environment method to dope SiO2 particles with RE ions via an acid-based wet chemical synthesis route by adding of the particles are studied using scanning electron microscopy (SEM), transmission electron microscopy (TEM

Polman, Albert

43

New England Hydro-Tran Elec Co | Open Energy Information  

Open Energy Info (EERE)

England Hydro-Tran Elec Co England Hydro-Tran Elec Co Jump to: navigation, search Name New England Hydro-Tran Elec Co Place Massachusetts Utility Id 13355 Utility Location Yes Ownership I NERC Location NPCC NERC NPCC Yes Activity Transmission Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png No rate schedules available. Average Rates No Rates Available References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from "http://en.openei.org/w/index.php?title=New_England_Hydro-Tran_Elec_Co&oldid=411165" Categories: EIA Utility Companies and Aliases

44

Deseret Generation & Tran Coop | Open Energy Information  

Open Energy Info (EERE)

Deseret Generation & Tran Coop Deseret Generation & Tran Coop Jump to: navigation, search Name Deseret Generation & Tran Coop Place Utah Utility Id 40230 Utility Location Yes Ownership C NERC Location WECC NERC WECC Yes Operates Generating Plant Yes Activity Generation Yes Activity Transmission Yes Activity Buying Transmission Yes Activity Wholesale Marketing Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png No rate schedules available. Average Rates No Rates Available References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from "http://en.openei.org/w/index.php?title=Deseret_Generation_%26_Tran_Coop&oldid=410580"

45

TransCanada Power Mktg Ltd | Open Energy Information  

Open Energy Info (EERE)

(Redirected from TransCanada) (Redirected from TransCanada) Jump to: navigation, search Name TransCanada Power Mktg Ltd Place Massachusetts Utility Id 19119 Utility Location Yes Ownership R NERC Location NPCC Activity Wholesale Marketing Yes Activity Retail Marketing Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png No rate schedules available. Average Rates Industrial: $0.0954/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from "http://en.openei.org/w/index.php?title=TransCanada_Power_Mktg_Ltd&oldid=411857" Categories: EIA Utility Companies and Aliases

46

ROLES OF SULFOTRANSFERASE ENZYMES IN TRANS-PLACENTAL DISPOSITION  

E-Print Network [OSTI]

The trophoblast cell layer constitutes the rate-determining barrier for trans-placental transfer. Several isoforms of the sulfotransferase enzymes are functional in placenta but there is only limited information available ...

Mitra, Pallabi

2009-01-28T23:59:59.000Z

47

Using HyTrans to Study H2 Transition Scenarios  

Broader source: Energy.gov [DOE]

Presentation on Using HyTrans to Study H2 Transition Scenarios given by David Greene of Oak Ridge National Laboratory during the DOE Hydrogen Transition Analysis Workshop on January 26, 2006.

48

STUDY OF TRANS-RECTAL NEAR-INFRARED DIFFUSE OPTICAL TOMOGRAPHY CONCURRENT  

E-Print Network [OSTI]

STUDY OF TRANS-RECTAL NEAR-INFRARED DIFFUSE OPTICAL TOMOGRAPHY CONCURRENT WITH TRANS of the requirements for the Degree of DOCTOR OF PHILOSOPHY May, 2010 #12;ii STUDY OF TRANS-RECTAL NEAR-INFRARED supported by the project Trans-rectal Near-Infrared Optical Tomography for Prostate Imaging from DOD

Piao, Daqing

49

STATEMENT OF C01 SIDER.!;.TIONS RE Q UE ST BY INVENTOR FOR THE WAIVER OF DOMESTIC AN  

Broader source: Energy.gov (indexed) [DOE]

C01 SIDER.!;.TIONS C01 SIDER.!;.TIONS RE Q UE ST BY INVENTOR FOR THE WAIVER OF DOMESTIC AN D FOREIGN RTGHTS TO AN IDE. TIFIED [NVEN'fl0'\1 ENTiTLED "RESONANT-CAVITY APPA.RATUS FOR CYTOM.GTRY OR PARTICLE ANA L'YS iS'' US P 5,793,485, DEVELOPI·:D UNDER DOE CONTRACT NO. DE-AC04-94AL85000; DOE r:\"VENTfON DISCLOSU RE NO. S-85,819 (SD-5797 ); DOE WAIV ER NO. V.l ( ) 201 l-oo_,; rv3 The Petitioner, Paul L. Gourley (Inventor), has requested a \\'aive of the Government's domestic and fo eign patent rights in a subject invention entitled "Resonant-Cavi ty Apparatus for Cytome ry or Particle Analy·sis." The invention v,·as conceived by the inventor while an employee of the Sandia Corporation (Sandia). ,'andia is the M&O contractor for the Sandia a ional Laboratories (S L), a government-0\vned, contracto

50

THE RESONANT TRANS-NEPTUNIAN POPULATIONS  

SciTech Connect (OSTI)

The trans-Neptunian objects (TNOs) trapped in mean-motion resonances with Neptune were likely emplaced there during planet migration late in the giant-planet formation process. We perform detailed modeling of the resonant objects detected in the Canada-France Ecliptic Plane Survey (CFEPS) in order to provide population estimates and, for some resonances, constrain the complex internal orbital element distribution. Detection biases play a critical role because phase relationships with Neptune make object discovery more likely at certain longitudes. This paper discusses the 3:2, 5:2, 2:1, 3:1, 5:1, 4:3, 5:3, 7:3, 5:4, and 7:4 mean-motion resonances, all of which had CFEPS detections, along with our upper limit on 1:1 Neptune Trojans (which is consistent with their small population estimated elsewhere). For the plutinos (TNOs in the 3:2 resonance) we refine the orbital element distribution given by Kavelaars et al. in 2009 and show that steep H-magnitude distributions (N(H){proportional_to}10{sup {alpha}H}, with {alpha} = 0.8-0.9) are favored in the range H{sub g} = 8-9, and confirm that this resonance does not share the inclination distribution of the classical Kuiper Belt. We give the first population estimate for the 5:2 resonance and find that, to within the uncertainties, the population is equal to that of the 3:2 ({approx_equal}13,000 TNOs with H{sub g} < 9.16), whereas the 2:1 population is smaller by a factor of 3-4 compared to the other two resonances. We also measure significant populations inhabiting the 4:3, 5:3, 7:3, 5:4, 7:4, 3:1, and 5:1 resonances, with H{sub g} < 9.16 (D > 100 km) populations in the thousands. We compare our intrinsic population and orbital element distributions with several published models of resonant-TNO production; the most striking discrepancy is that resonances beyond the 2:1 are in reality more heavily populated than in published models.

Gladman, B.; Lawler, S. M.; Van Laerhoven, C. [Department of Physics and Astronomy, 6224 Agricultural Road, University of British Columbia, Vancouver, BC V6T 1Z1 (Canada); Petit, J.-M.; Rousselot, P. [Institut UTINAM, CNRS-UMR 6213, Observatoire de Besancon, BP 1615, 25010 Besancon Cedex (France); Kavelaars, J. [Herzberg Institute of Astrophysics, National Research Council of Canada, Victoria, BC V9E 2E7 (Canada); Jones, R. L. [Department of Astronomy, University of Washington, Seattle, WA 98195 (United States); Parker, J. Wm.; Bieryla, A. [Southwest Research Institute, 1050 Walnut Street, Suite 300, Boulder, CO 80302 (United States); Nicholson, P. [Department of Astronomy, Cornell University, Ithaca, NY 14853 (United States); Ashby, M. L. N. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States)

2012-07-15T23:59:59.000Z

51

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 24, NO. 12, JUNE 15, 2012 1069 Si/Ge Avalanche Photodiodes-Based Electrical  

E-Print Network [OSTI]

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 24, NO. 12, JUNE 15, 2012 1069 Si/Ge Avalanche Photodiodes/Ge-based avalanche photodiode (APD) for the direct genera- tion of ultra-wideband (UWB) frequency comb lines--Avalanche photodiodes (APD), impulse radio (IR), ultra-wideband (UWB). I. INTRODUCTION THERE has been a great scarcity

Bowers, John

52

File:Utah Trans Siting.pdf | Open Energy Information  

Open Energy Info (EERE)

Trans Siting.pdf Trans Siting.pdf Jump to: navigation, search File File history File usage File:Utah Trans Siting.pdf Size of this preview: 463 × 599 pixels. Other resolution: 464 × 600 pixels. Go to page 1 2 Go! next page → next page → Full resolution ‎(1,275 × 1,650 pixels, file size: 21 KB, MIME type: application/pdf, 2 pages) File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 15:20, 13 November 2012 Thumbnail for version as of 15:20, 13 November 2012 1,275 × 1,650, 2 pages (21 KB) Dklein2012 (Talk | contribs) You cannot overwrite this file. Edit this file using an external application (See the setup instructions for more information) File usage There are no pages that link to this file.

53

Campus Sustainability Planetary Health Ecological Design Social and Environmental Enterprise Incuba-tion EcoVillages Sustainable Food Systems Ecoliteracy Solutions Journal Campus Systems Model Energy  

E-Print Network [OSTI]

Villages Sustainable Food Systems Ecoliteracy Solutions Journal Campus Systems Model Energy Conservation, Efficiency1 Campus Sustainability Planetary Health Ecological Design Social and Environmental Enterprise Incuba- tion EcoVillages Sustainable Food Systems Ecoliteracy Solutions Journal Campus Systems Model

Hayden, Nancy J.

54

TransNIEMO: ECONOMIC IMPACT ANALYSIS USING A MODEL  

E-Print Network [OSTI]

TransNIEMO: ECONOMIC IMPACT ANALYSIS USING A MODEL OF CONSISTENT INTERREGIONAL ECONOMIC AND HIGHWAY of Industrial and Systems Engineering; and the School of Policy Planning and Development Qisheng Pan, Associate of Industrial and Systems Engineering JoongKoo Cho Epstein Department of Industrial and Systems Engineering

Wang, Hai

55

Composite Web Services Kung-Kiu Lau and Cuong Tran  

E-Print Network [OSTI]

Composite Web Services Kung-Kiu Lau and Cuong Tran Keywords. Web service, composite service, service composition, component model. Abstract. Currently, composition of web services is done services involved. It is therefore a composition of individual operations, rather than a composition

Lau, Kung-Kiu

56

Graphene as a subnanometre trans-electrode , W. Hubbard2  

E-Print Network [OSTI]

#12;LETTERS Graphene as a subnanometre trans-electrode membrane S. Garaj1 , W. Hubbard2 , A. Reina3 of graphite, called graphene, have recently been the subject of intense research with the hope that practical and elec- trical sensitivity of graphene motivated us to investigate the poten- tial use of graphene

Golovchenko, Jene A.

57

Trans Boundary Transport of Pollutants by Atmospheric Mineral  

E-Print Network [OSTI]

Trans Boundary Transport of Pollutants by Atmospheric Mineral Dust Y I G A L E R E L , * , U R I D, and solid constituents in the atmosphere (3-11). Uptake of pollutants by mineral dust has been shown Jerusalem, Israel The transport of anthropogenic pollution by desert dust in the Eastern Mediterranean

Einat, Aharonov

58

Mass of Si-24  

E-Print Network [OSTI]

PHYSICAL REVIEW C VOLUME 22, NUMBER 1 JULY 1980 Mass of Si R. E. Tribble, D. M. Tanner, and A. F. Zeller* Cyclotron Institute and Physics Department, Texas A&M University, College Station, Texas 77843 (Received 11 January 1980) The Si( He, 'He... quintet. The theoretical predictions are from Ref. 14. Nuclides +Si- 4AI Al Mg +Mg 24Na +Na- 4Ne Experimental 4&, 5661(24) 5179(9) 4735(2) 42840. 0) Predicted &&, 5646 5184 4722 4260 15 -5 12 24 +37 +12 -12 -37 ay g@eXQ ~~ thearC C...

Tribble, Robert E.; Tanner, D. M.; Zeller, A. F.

1980-01-01T23:59:59.000Z

59

TransCom3 Level 2 Data Set Released  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Level 2 Data Set Released Level 2 Data Set Released The ORNL DAAC announces the release of "TransCom 3: Seasonal CO2 Flux Estimates from Atmospheric Inversions (Level 2)", prepared by K.R. Gurney and A.S. Denning. This data set provides model outputs and seasonal mean CO2 fluxes from the Atmospheric Carbon Cycle Inversion Intercomparison (TransCom 3), Level 2 inversion experiment. This Level 2 experiment inverted for the spatial and temporal pattern of the residual CO2 sources and sinks. The seasonal inversion consists of a 3-year forward simulation (365 days per year) containing 4 presubtracted tracers, 11 SF6 tracers, and 22 CO2 tracers (11 terrestrial, 11 oceanic) (Gurney et al., 2000). Carbon fluxes were estimated for each month of an average year determined as the mean of the

60

VTA, SamTrans Look into Future with Bus Demo  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

induction motor for propulsion. induction motor for propulsion. Although there are several fuel cell chemistries and configura- tions, PEM is generally recog- nized as the best combination of electrochemistry, operating temperature, and weight for transportation applications. The fuel cell supplies electric current via an inverter to the propulsion motor, which is a proprietary design. This chassis- mounted, three-phase, induction motor is rated at 225 kW

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Optimal Cropping Strategies Considering Risk: Texas Trans-Pecos.  

E-Print Network [OSTI]

trials. The EPIC (Erosion Productivity Impact Calculator) generalized crop growth model, originally developed by the U.S. Department of Agricul ture (Williams et al., 1984a), was used to develop yield distribu tions for selected row crops and various... ous facets of this study. Their contributions added greatly to the depth and scope of this effort. Numerous other individuals contributed valuable time and energy. James (Jimmy) Williams of the U.S. Department of Agriculture, Blacklands Research...

Ellis, John R.; Lacewell, Ronald D.; Moore, Jaroy; Richardson, James

1990-01-01T23:59:59.000Z

62

X-Ray And Polarized Neutron Reflectometry: Characterization Of Si/Co/Si And Si/Ni/Si Systems  

SciTech Connect (OSTI)

Technologically important metal silicides formed through interdiffusion in metal/Si systems has been probed using two complementary techniques viz. x-ray reflectivity (XRR) and polarized neutron reflectivity (PNR). Both structural and magnetic characterization with good depth resolution has been achieved in these systems. We have studied two systems Si/Co/Si and Si/Ni/Si which relate to important applications in ferromagnetic/ non-magnetic semiconductor layered structures for memory devices.

Bhattacharya, Debarati; Basu, Saibal [Solid State Physics Division, Bhabha Atomic Research Center, Mumbai, Maharastra 400085 (India); Poswal, A. K. [Applied Spectroscopy Division, Bhabha Atomic Research Center, Mumbai, Maharastra 400085 (India); Roy, S.; Dev, B. N. [Department of Materials Science, Indian Association for the Cultivation of Science, 2A and 2B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032 (India)

2010-12-01T23:59:59.000Z

63

Towards an InTerdIscIplInary approach To nexT-GeneraTIon BIofuels EnvironmEntal, tEchno-Economic, and GovErnancE  

E-Print Network [OSTI]

Towards an InTerdIscIplInary approach To nexT-GeneraTIon BIofuels EnvironmEntal, t. 2010. The Ecological Impact of Biofuels. Pages 351-377 in D. J. Futuyma, H. B. Shafer, and D. Huffer, S., Roche, C.M., Blanch, H.W., and Clark, D.S. (2012). Escherichia coli for biofuel production

Iglesia, Enrique

64

Evaluation of microstructure for SiC/SiC composites  

Science Journals Connector (OSTI)

SiC/SiC composites are expected to be used as materials for high temperature structural parts because of their high temperature stability. Toshiba has developed two kinds of SiC/SiC composites for gas turbine hot parts applications, which produced by RS and PIP processes. The both processes have the capabilities of making complex shapes in near net. In this work, the microstructure of two kinds of SiC/SiC composites was evaluated using mercury intrusion method. The influence of their microstructural feature on some properties, such as bending strength, thermal conductivity and oxidation resistance, were discussed.

S. Suyama; T. Kameda; Y. Itoh

2001-01-01T23:59:59.000Z

65

Anton Tran receives award from the Air War College | National Nuclear  

National Nuclear Security Administration (NNSA)

Anton Tran receives award from the Air War College | National Nuclear Anton Tran receives award from the Air War College | National Nuclear Security Administration Our Mission Managing the Stockpile Preventing Proliferation Powering the Nuclear Navy Emergency Response Recapitalizing Our Infrastructure Continuing Management Reform Countering Nuclear Terrorism About Us Our Programs Our History Who We Are Our Leadership Our Locations Budget Our Operations Media Room Congressional Testimony Fact Sheets Newsletters Press Releases Speeches Events Social Media Video Gallery Photo Gallery NNSA Archive Federal Employment Apply for Our Jobs Our Jobs Working at NNSA Blog Home > NNSA Blog > Anton Tran receives award from the Air ... Anton Tran receives award from the Air War College Posted By Office of Public Affairs Anton Tran Anton Tran, from NNSA's Office of Nuclear Weapon Surety and Quality, has

66

Integrated Analysis of Market Transformation Scenarios with HyTrans  

SciTech Connect (OSTI)

This report presents alternative visions of the transition of light-duty vehicle transportation in the United States from petroleum to hydrogen power. It is a supporting document to the U.S. Department of Energy's Summary Report, "Analysis of the Transition to a Hydrogen Economy and the Potential Hydrogen Infrastructure Requirements" (U.S. DOE, 2007). Three alternative early transition scenarios were analyzed using a market simulation model called HyTrans. The HyTrans model simultaneously represents the behavior of fuel suppliers, vehicle manufacturers and consumers, explicitly recognizing the importance of fuel availability and the diversity of vehicle choices to consumers, and dependence of fuel supply on the existence of market demand. Competitive market outcomes are simulated by means of non-linear optimization of social surplus through the year 2050. The three scenarios specify different rates and geographical distributions of market penetration for hydrogen fuel cell vehicles from 2012 through 2025. Scenario 1 leads to 2 million vehicles on U.S. roads by 2025, while Scenarios 2 and 3 result in 5 million and 10 million FCVs in use by 2025, respectively. The HyTrans model "costs out" the transition scenarios and alternative policies for achieving them. It then tests whether the scenarios, together with the achievement of the DOE's technology goals for fuel cell vehicles and hydrogen infrastructure technologies could lead to a sustainable transition to hydrogen powered transportation. Given the achievement of DOE's ambitious technology goals, all three scenarios appear to lead to a sustainable transition to hydrogen. In the absence of early transition deployment effort, no transition is likely to begin before 2045. The cumulative costs of the transition scenarios to the government range from $8 billion to $45 billion, depending on the scenario, the policies adopted and the degree of cost-sharing with industry. In the absence of carbon constraining policies, the transition to hydrogen achieves about the same reduction in CO2 emissions as a transition to advanced gasoline-electric hybrid vehicles. With significant carbon policy, drastic reductions in well-to-wheel CO2 emissions are possible. Energy transition modeling is a newly evolving field and much remains to be done to improve the utility of models like HyTrans.

Greene, David L [ORNL; Leiby, Paul Newsome [ORNL; Bowman, David Charles [ORNL

2007-06-01T23:59:59.000Z

67

100 Gbps Test Link Sets Pace for Faster Trans-Atlantic Data Transfers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

100 Gbps Test Link Sets Pace for Faster Trans-Atlantic Data Transfers News & Publications ESnet in the News ESnet News Media & Press Publications and Presentations Galleries ESnet...

68

U.S. DEPARThIENT OF ENERGY EERE PROJECT MANAGEMENT CENTER NEP..I. DFTFRlIllN..I.TION  

Broader source: Energy.gov (indexed) [DOE]

NEP..I. DFTFRlIllN..I.TION NEP..I. DFTFRlIllN..I.TION RECIPIENT:State of Nevada Office of Energy PROJECT TITLE: Nevada EECBG City $ubgrant: West Wendover Page 1 of2 STATE: NV Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE-FOA.ooooo13 EEOOOO687.001 EEO Bssed on my review of the information conccrning the proposed action, as NEPA Compliance Officu (Iuthorlzed under DOE Order 451.IA), I have made the (ollowing determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 85.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assIstance to Individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

69

Behavior of Si and C atoms in ion amorphized SiC. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Si and C atoms in ion amorphized SiC. Behavior of Si and C atoms in ion amorphized SiC. Abstract: Single crystal 6H-SiC wafers were fully amorphized at room temperature or 200 K...

70

TransPlanckian Particles and the Quantization of Time  

E-Print Network [OSTI]

Trans-Planckian particles are elementary particles accelerated such that their energies surpass the Planck value. There are several reasons to believe that trans-Planckian particles do not represent independent degrees of freedom in Hilbert space, but they are controlled by the cis-Planckian particles. A way to learn more about the mechanisms at work here, is to study black hole horizons, starting from the scattering matrix Ansatz. By compactifying one of the three physical spacial dimensions, the scattering matrix Ansatz can be exploited more efficiently than before. The algebra of operators on a black hole horizon allows for a few distinct representations. It is found that this horizon can be seen as being built up from string bits with unit lengths, each of which being described by a representation of the SO(2,1) Lorentz group. We then demonstrate how the holographic principle works for this case, by constructing the operators corresponding to a field in space-time. The parameter t turns out to be quantized in Planckian units, divided by the period R of the compactified dimension.

G. 't Hooft

1998-05-20T23:59:59.000Z

71

Economic Costs and Benefits of the Trans Mountain Expansion Project (TMX)  

E-Print Network [OSTI]

Economic Costs and Benefits of the Trans Mountain Expansion Project (TMX) for BC and Metro.thegoodman.com November 10, 2014 #12;SCHOOL OF PUBLIC POLICY Economic Costs and Benefits of the Trans Mountain Expansion Project (TMX) for BC and Metro Vancouver ii Table of Contents 1 Executive Summary

72

Evidence for energy coupling from the SiD vibration mode to the SiSi and SiO vibration modes at the SiO2 Si interface  

E-Print Network [OSTI]

. Jackson, Appl. Phys. Lett., 69, 2441 1996 , we measured the Si­H, Si­D, and other vibrational modes vibrational modes. In this letter, we present the experimental measurement of vibrational modes at the SiO2Evidence for energy coupling from the Si­D vibration mode to the Si­Si and Si­O vibration modes

Chen, Zhi

73

Trade war in the Pacific: ASEAN and the Trans-Pacific Partnership https://theconversation.edu.au/trade-war-in-the-pacific-asean-and-the-trans-pacific-partnership-10937[3/12/2012 11:38:09 AM  

E-Print Network [OSTI]

Trade war in the Pacific: ASEAN and the Trans-Pacific Partnership https://theconversation.edu.au/trade-war-in-the-pacific-asean-and-the-trans-pacific-partnership-10937[3/12/2012 11:38:09 AM] TC Home + Society Science + Technology Trade war in the Pacific: ASEAN and the Trans-Pacific Partnership 30 November

Botea, Adi

74

TransForum v9n1 - Omnivorous Engine  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

TransForum Vol. 9, No. 1 This Omnivore Likes a Variety of Fuels, Not Foods Omnivorous engine with Thomas Wallner Argonne research engineer Thomas Wallner adjusts the delay on an ion-sensing circuit used to get real-time combustion feedback. When it comes to fuel, Argonne's omnivorous engine doesn't play favorites. It can take down any blend of gasoline, ethanol, butanol and other types of spark-ignited fuel. Though flexible-fuel vehicles have been around since Ford manufactured its Model T to run on both gasoline and ethanol, the omnivorous engine takes the concept to a whole new level. With this project, researchers are working to fashion an engine that allows spark-ignition vehicles to run more efficiently on ethanol and other next-generation alternative fuels.

75

TransForum Volume 10, No. 1 - Spring 2010  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

1- Spring 2010 1- Spring 2010 RESEARCH REVIEWS 2 Argonne Receives R&D 100 Award for Superhard and Slick Coating 3 Argonne to Explore Lithium-air Battery 4 Argonne's TTRDC Partners with India 5 EcoCAR Participants in Year Two of Competition 6 Charging Ahead: Taking PHEVs Farther on a Single Battery Charge 7 New Molecule Could Help Make Batteries Safer, Less Expensive 8 A Great Debate: Fuel Economy versus Fuel Consumption 10 ARPA-E Awards $6 Million to Two Argonne Projects 11 Green Racing: Fueling Change in the Auto Industry 12 Six Myths about Plug-in Hybrid Electric Vehicles 14 IN THE NEWS 15 FASTRAX 16 PUTTING ARGONNE'S RESOURCES TO WORK FOR YOU Charging Ahead with Ultracapacitors page 6 2 TransForum 8 Spring 2010

76

An Introduction to Resurgence, Trans-Series and Alien Calculus  

E-Print Network [OSTI]

In these notes we give an overview of different topics in resurgence theory from a physics point of view, but with particular mathematical flavour. After a short review of the standard Borel method for the resummation of asymptotic series, we introduce the class of simple resurgent functions, explaining their importance in physical problems. We define the Stokes automorphism and the alien derivative and discuss these objects in concrete examples using the notion of trans-series expansion. With all the tools introduced, we see how resurgence and alien calculus allow us to extract non-perturbative physics from perturbation theory. To conclude, we apply Morse theory to a toy model path integral to understand why physical observables should be resurgent functions.

Daniele Dorigoni

2015-01-17T23:59:59.000Z

77

An Introduction to Resurgence, Trans-Series and Alien Calculus  

E-Print Network [OSTI]

In these notes we give an overview of different topics in resurgence theory from a physics point of view, but with particular mathematical flavour. After a short review of the standard Borel method for the resummation of asymptotic series, we introduce the class of simple resurgent functions, explaining their importance in physical problems. We define the Stokes automorphism and the alien derivative and discuss these objects in concrete examples using the notion of trans-series expansion. With all the tools introduced, we see how resurgence and alien calculus allow us to extract non-perturbative physics from perturbation theory. To conclude, we apply Morse theory to a toy model path integral to understand why physical observables should be resurgent functions.

Dorigoni, Daniele

2014-01-01T23:59:59.000Z

78

Studies of wax deposition in the Trans Alaska pipeline  

SciTech Connect (OSTI)

The crude oil being pumped into the Trans Alaska pipeline experiences considerable cooling during its 800-mile (1,287 km) journey from Prudhoe Bay to Valdez. The conditions during the initial flow period were favorable especially for the deposition of the waxy constituents of the crude on the pipeline wall. As time passed and the crude oil flow rate increased, segments of the pipeline warmed up to temperatures greater than that at which wax deposition occurs. This study investigated mechanisms of wax deposition and determined the expected nature and thickness of deposits in the pipeline as a function of time and distance. Results indicate that deposition during start-up is a consequence of 3 separate mechanisms which transport both dissolved and precipitated waxy residue laterally. 31 references.

Burger, E.D.; Perkins, T.K.; Striegler, J.H.

1980-03-01T23:59:59.000Z

79

Trans-oceanic pipeline: reaffirms Panama's strategic position  

SciTech Connect (OSTI)

The Trans-Panama Pipeline, which began in July 1980 and was finished October 1, 1982, will transport Alaskan crude from Puerto Armuelles, in the Pacific Ocean, to Chiriqui Grande, in the Atlantic. Built at a total cost of $400 million, the facility will speed deliveries of North Slope crude to refining centers in Houston, Puerto Rico, the Virgin Islands, and New Jersey; it is expected to move about 800,000 barrels/day by January 1983. With construction of a pump station near Chiriqui Grande, the pipeline could easily be altered for reverse-flow capability. This issue of Energy Detente reviews the use of the new pipeline, as it cuts crude oil transportation time and cost and provides an alternative to the Panama Canal. The issue also updates the fuel price/tax series for the countries of the Western Hemisphere.

Not Available

1982-11-24T23:59:59.000Z

80

SI Group Scheduling Page  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Personnel On-Call Page Beamline Validation Schedule Group Organizational Chart Reviews Presentations Group Scheduling Page Project Scheduling Information Ops Scheduling Info Project / Scheduling Info APS fy2005 Annual Schedule ( html ) PSS Validation Schedule APS fy2006 Annual Schedule (html) PSS Validation Teams Latest Machine Studies Schedule (pdf) (html) New Builds Schedule (For SI GROUP Reference Only) Parasitic Beam Operations Schedule Ops Scheduling Page Shutdown Information Work Schedules August/September Shutdown Shutdown Work List Validation Schedule Safety Info Work Request Links ISM Core Functions Enter / Search Work Requests APS Safety Page Modify / Approve Work Requests Radiation Safety Policy APS TMS Training Profiles MSDS Search This page maintained by Joe Budz

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Magnesium Silicate Dissolution Investigated by 29Si MAS, 1H-29Si...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Magnesium Silicate Dissolution Investigated by 29Si MAS, 1H-29Si CP MAS, 25Mg QCPMG, and 1H-25Mg CP QCPMG NMR. Magnesium Silicate Dissolution Investigated by 29Si MAS, 1H-29Si CP...

82

Synthesis and Characterization of Structured Si-Carbon Nanocomposite...  

Broader source: Energy.gov (indexed) [DOE]

nanoparticles with controlled size and synthesized Si-carbon composites, including Si-graphene and Si@hollow carbon. * Synthesized new polymer binders for Si-based anodes. *...

83

Permeability controls in the Santana Tuff, Trans-Pecos Texas  

SciTech Connect (OSTI)

The Santana Tuff is a poorly to densely welded rhyolitic ash-flow tuff that erupted from the Sierra Rica caldera complex in Chihuahua, Mexico, 27.8 m.y. ago. The portion of the Santana Tuff examined in this study crops out over a 125-km[sup 2] area in the Big Bend Ranch State Natural Area in Trans-Pecos Texas. A review of recent literature has revealed the need to incorporate realistic values for permeability due to fracture spacing into groundwater models. Permeability/porosity relationship for fracture skins and unaltered tuff are significant to problems of solute transport. Permeability measurements of tuff samples vary over four orders of magnitude. The most densely welded samples have the lowest permeability. The least densely welded ones have the highest permeability. However, effective permeabilities of the differentially welded layers are quite different if fractures are considered. The spacing of cooling fractures in poorly to densely welded layers of the Santana Tuff also varies considerably. Degree of welding of the different Santana Tuff units has been quantified by length-to-width ratios (flattening) of pumice fragments. Lognormally distributed fracture spacing measurements correlate directly with the degree of welding. Rose diagrams and stereonets indicate that fracture orientations are not always random, as might be inferred from a cooling origin, but may have preferred orientation patterns.

Smyth, R.C.; Sharp, J.M. Jr. (Univ. of Texas, Austin, TX (United States). Dept. of Geological Sciences)

1993-02-01T23:59:59.000Z

84

EIS-0450: TransWest Express 600 kV Direct Current Transmission Project in  

Broader source: Energy.gov (indexed) [DOE]

0: TransWest Express 600 kV Direct Current Transmission 0: TransWest Express 600 kV Direct Current Transmission Project in Wyoming, Colorado, Utah, and Nevada EIS-0450: TransWest Express 600 kV Direct Current Transmission Project in Wyoming, Colorado, Utah, and Nevada Summary This EIS, being prepared jointly by DOE's Western Area Power Administration and the Department of the Interior's Bureau of Land Management (Wyoming State Office), evaluates the environmental impacts of granting a right-of-way for the TransWest Express 600-kilovolt Direct Current Transmission Project and amending a land use plan. The project consists of an overhead transmission line that would extend approximately 725 miles from south-central Wyoming, through Colorado and Utah. Western proposes to be a joint owner of the project. Public Comment Opportunities

85

Trans-chalcone: a novel small molecule inhibitor of mammalian alpha-amylase  

Science Journals Connector (OSTI)

Trans...-chalcone (1,3-diphenyl-2-propen-1-one), a biphenolic core structure of flavonoids precursor was tested for inhibitory activity toward alpha-amylase. Porcine pancreatic alpha-amylase was ...

Mahmoud Najafian; Azadeh Ebrahim-Habibi; Nastaran Hezareh…

2011-03-01T23:59:59.000Z

86

North American Central Plains conductivity anomaly within the Trans-Hudson orogen in northern Saskatchewan, Canada  

E-Print Network [OSTI]

Saskatchewan, Canada Alan G. Jones } James A. Craven Geological Survey of Canada, 1 Observatory Crescent Magnetotelluric data acquired across the Paleoproterozoic Trans-Hudson orogen, north- ern Saskatchewan, image one

Jones, Alan G.

87

Phil. Trans. R. Soc. A (2010) 368, 439454 doi:10.1098/rsta.2009.0242  

E-Print Network [OSTI]

Phil. Trans. R. Soc. A (2010) 368, 439­454 doi:10.1098/rsta.2009.0242 Controlling biological & Tyson 2008), and existing oscillations may become more robust (Stricker et al. 2008; Ugander 2008

Daly, Samantha

88

HIV-1 Tat trans-activates in the Absence of its Target  

Science Journals Connector (OSTI)

The human immunodeficiency virus type 1 (HIV-1) is the etiologic agent of the ... immunodeficiency disease syndrome (AIDS). Transcription of HIV-1 is regulated by the virally encoded trans-activator, Tat (Varmus,...

Mark J. Selby; B. Matija Peterlin

1991-01-01T23:59:59.000Z

89

E-Print Network 3.0 - all-trans-retinoic acid-induced postaxial...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

a crush. After- wards, 10 mg of all-trans retinoic acid (Sigma, Deisen- hofen... . Comparison of antler volumes between the experimental side treated with 10 mg of ... Source:...

90

Natural control of Helicoverpa zea (Boddie) in Trans-Pecos cotton  

E-Print Network [OSTI]

NATURAL CONTROL OF HELICOVERPA ZEA (BODDIE) IN TRANS-PECOS COTTON A Thesis by DOUGLAS EUGENE PUSTEJOVSKY Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment of the requirements for the degree of MASTER... OF SCIENCE August 1998 Major Subject: Entomology NA~ CONTROL OF HELICOVZRPA ZE4 (BODDIE) IN TRANS-PECOS COTTON A Thesis by DOUGLAS EUGENE PUSTEJOVSKY Submitted to Texas A8. M University in partial fulfillment of the requirements for the degree...

Pustejovsky, Douglas Eugene

1998-01-01T23:59:59.000Z

91

Intern experience at Tech Tran Corporation, Naperville, Illinois: an internship report  

E-Print Network [OSTI]

INTERN EXPERIENCE AT TECH TRAN CORPORATION NAPERVILLE, ILLINOIS AN INTERNSHIP REPORT by Joseph Alan Morgan Submitted to the College of Engineering of Texas A&M University in partial fulfillment of the requirement for the degree of DOCTOR... OF ENGINEERING JULY 1982 Major Subject: Industrial Engineering INTERN EXPERIENCE AT TECH TRAN CORPORATION NAPERVILLE, ILLINOIS An Internship Report by Joseph Alan Morgan Approved as to style and content by: Dr Robert E. roun Committee ChaArma Dr Newton...

Morgan, Joseph Alan, 1947-

2013-03-13T23:59:59.000Z

92

DEP.-\RTUENT OF ENERG Y EERE PROJECT MANAG EM ENT CENTER NEP.-I. DETEIU.lIN.-I.TION  

Broader source: Energy.gov (indexed) [DOE]

-\RTUENT OF ENERG Y -\RTUENT OF ENERG Y EERE PROJECT MANAG EM ENT CENTER NEP.-I. DETEIU.lIN.-I.TION Page 1 of2 RECIPIENT:Govemor's Energy Office STATE: CO PROJECf TITLE: COLORADO SEP ARRA - Geothermal Power Direct Use Grant - Town of Rico Funding Opportunity Announcement Number OE-FOA-OOOOO52 Procurement Instrument Number DE-EE0000082 NEPA Control Number GF0..()()()()()82 -009 elD Number o Based on my review of the inCormation concerning the proposed action, as N[PA Compliance Officer (authorized under DOE Order 451.1;\), I have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A 11 Technical advice and planning assistance to international, national, state, and local organizations. A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including

93

Geophysical review of Trans-Pecos area of west Texas  

SciTech Connect (OSTI)

The Trans-Pecos has intrigued and baffled the oil industry, and all exploratory efforts so far have remained fruitless. Our geophysical findings along with other geologic information allow us to analyze the overall hydrocarbon potential for this area. Gravity and magnetic data were helpful in regional mapping but were unreliable for localized information owing to numerous extrusive and intrusive rocks. Seismic mapping shows many undrilled structures. However, the success ratio for the structures already drilled is disappointing (e.g., on the Diablo platform, out of 22 structural leads, 11 have been drilled and all were dry, and in the Marfa basin 17 out of 41 leads were drilled without success). Results were similar in Salt-Flat graben. Many of these wells had good hydrocarbon shows and almost all yielded fresh water. Tectonically the area has undergone several periods of orogeny, the result of the latest being numerous Basin and Range faults. The area is still seismically active and shows appreciable geodetic movement. It is suggested that the traps were destroyed with subsequent leakage of hydrocarbon and repeated induction of fresh water. Trap destruction is apparently beyond the scope of seismic detection. The Chihuahua trough (US), in spite of many discouraging facts, such as high heat flow, thermal waters, etc, shows some promise because seismic data reveal large thrust anticlines in the lower Paleozoic rocks (approximately 15,000 ft) that are yet to be adequately tested. Other small undamaged stratigraphic traps (reefs, truncations, pinch-outs, etc) are possibly present and could be targets for future exploration.

Addy, S.K.; DeJong, H.W.; Whitney, G.W.; Worthington, R.E.

1985-02-01T23:59:59.000Z

94

Eco TransIT World | Open Energy Information  

Open Energy Info (EERE)

Eco TransIT World Eco TransIT World Jump to: navigation, search Tool Summary LAUNCH TOOL Name: Eco TransIT World Focus Area: Low Carbon Communities Topics: Opportunity Assessment & Screening Website: www.ecotransit.org/index.en.html Equivalent URI: cleanenergysolutions.org/content/eco-transit-world Language: "English,Dutch,French,German,Spanish" is not in the list of possible values (Abkhazian, Achinese, Acoli, Adangme, Adyghe; Adygei, Afar, Afrihili, Afrikaans, Afro-Asiatic languages, Ainu, Akan, Akkadian, Albanian, Aleut, Algonquian languages, Altaic languages, Amharic, Angika, Apache languages, Arabic, Aragonese, Arapaho, Arawak, Armenian, Aromanian; Arumanian; Macedo-Romanian, Artificial languages, Assamese, Asturian; Bable; Leonese; Asturleonese, Athapascan languages, Australian languages, Austronesian languages, Avaric, Avestan, Awadhi, Aymara, Azerbaijani, Balinese, Baltic languages, Baluchi, Bambara, Bamileke languages, Banda languages, Bantu (Other), Basa, Bashkir, Basque, Batak languages, Beja; Bedawiyet, Belarusian, Bemba, Bengali, Berber languages, Bhojpuri, Bihari languages, Bikol, Bini; Edo, Bislama, Blin; Bilin, Blissymbols; Blissymbolics; Bliss, Bosnian, Braj, Breton, Buginese, Bulgarian, Buriat, Burmese, Caddo, Catalan; Valencian, Caucasian languages, Cebuano, Celtic languages, Central American Indian languages, Central Khmer, Chagatai, Chamic languages, Chamorro, Chechen, Cherokee, Cheyenne, Chibcha, Chichewa; Chewa; Nyanja, Chinese, Chinook jargon, Chipewyan; Dene Suline, Choctaw, Chuukese, Chuvash, Classical Newari; Old Newari; Classical Nepal Bhasa, Classical Syriac, Coptic, Cornish, Corsican, Cree, Creek, Creoles and pidgins , Crimean Tatar; Crimean Turkish, Croatian, Cushitic languages, Czech, Dakota, Danish, Dargwa, Delaware, Dinka, Divehi; Dhivehi; Maldivian, Dogri, Dogrib, Dravidian languages, Duala, Dutch; Flemish, Dyula, Dzongkha, Eastern Frisian, Efik, Egyptian (Ancient), Ekajuk, Elamite, English, Erzya, Esperanto, Estonian, Ewe, Ewondo, Fang, Fanti, Faroese, Fijian, Filipino; Pilipino, Finnish, Finno-Ugrian languages, Fon, French, Friulian, Fulah, Ga, Gaelic; Scottish Gaelic, Galibi Carib, Galician, Ganda, Gayo, Gbaya, Geez, Georgian, German, Germanic languages, Gilbertese, Gondi, Gorontalo, Gothic, Grebo, Greek, Modern, Guarani, Gujarati, Gwich'in, Haida, Haitian; Haitian Creole, Hausa, Hawaiian, Hebrew, Herero, Hiligaynon, Himachali languages; Western Pahari languages, Hindi, Hiri Motu, Hittite, Hmong; Mong, Hungarian, Hupa, Iban, Icelandic, Ido, Igbo, Ijo languages, Iloko, Inari Sami, Indic languages, Indo-European languages, Indonesian, Ingush, Interlingue; Occidental, Inuktitut, Inupiaq, Iranian languages, Irish, Iroquoian languages, Italian, Japanese, Javanese, Judeo-Arabic, Judeo-Persian, Kabardian, Kabyle, Kachin; Jingpho, Kalaallisut; Greenlandic, Kalmyk; Oirat, Kamba, Kannada, Kanuri, Kara-Kalpak, Karachay-Balkar, Karelian, Karen languages, Kashmiri, Kashubian, Kawi, Kazakh, Khasi, Khoisan languages, Khotanese; Sakan, Kikuyu; Gikuyu, Kimbundu, Kinyarwanda, Kirghiz; Kyrgyz, Klingon; tlhIngan-Hol, Komi, Kongo, Konkani, Korean, Kosraean, Kpelle, Kru languages, Kuanyama; Kwanyama, Kumyk, Kurdish, Kurukh, Kutenai, Ladino, Lahnda, Lamba, Land Dayak languages, Lao, Latin, Latvian, Lezghian, Limburgan; Limburger; Limburgish, Lingala, Lithuanian, Lojban, Lower Sorbian, Lozi, Luba-Katanga, Luba-Lulua, Luiseno, Lule Sami, Lunda, Luo (Kenya and Tanzania), Lushai, Luxembourgish; Letzeburgesch, Macedonian, Madurese, Magahi, Maithili, Makasar, Malagasy, Malay, Malayalam, Maltese, Manchu, Mandar, Mandingo, Manipuri, Manobo languages, Manx, Maori, Mapudungun; Mapuche, Marathi, Mari, Marshallese, Marwari, Masai, Mayan languages, Mende, Mi'kmaq; Micmac, Minangkabau, Mirandese, Mohawk, Moksha, Mon-Khmer languages, Mongo, Mongolian, Mossi, Multiple languages, Munda languages, N'Ko, Nahuatl languages, Nauru, Navajo; Navaho, Ndebele, North; North Ndebele, Ndebele, South; South Ndebele, Ndonga, Neapolitan, Nepal Bhasa; Newari, Nepali, Nias, Niger-Kordofanian languages, Nilo-Saharan languages, Niuean, North American Indian languages, Northern Frisian, Northern Sami, Norwegian, Nubian languages, Nyamwezi, Nyankole, Nyoro, Nzima, Occitan (post 1500); Provençal, Ojibwa, Oriya, Oromo, Osage, Ossetian; Ossetic, Otomian languages, Pahlavi, Palauan, Pali, Pampanga; Kapampangan, Pangasinan, Panjabi; Punjabi, Papiamento, Papuan languages, Pedi; Sepedi; Northern Sotho, Persian, Philippine languages, Phoenician, Pohnpeian, Polish, Portuguese, Prakrit languages, Pushto; Pashto, Quechua, Rajasthani, Rapanui, Rarotongan; Cook Islands Maori, Romance languages, Romanian; Moldavian; Moldovan, Romansh, Romany, Rundi, Russian, Salishan languages, Samaritan Aramaic, Sami languages, Samoan, Sandawe, Sango, Sanskrit, Santali, Sardinian, Sasak, Scots, Selkup, Semitic languages, Serbian, Serer, Shan, Shona, Sichuan Yi; Nuosu, Sicilian, Sidamo, Sign Languages, Siksika, Sindhi, Sinhala; Sinhalese, Sino-Tibetan languages, Siouan languages, Skolt Sami, Slave (Athapascan), Slavic languages, Slovak, Slovenian, Sogdian, Somali, Songhai languages, Soninke, Sorbian languages, Sotho, Southern, South American Indian (Other), Southern Altai, Southern Sami, Spanish; Castilian, Sranan Tongo, Sukuma, Sumerian, Sundanese, Susu, Swahili, Swati, Swedish, Swiss German; Alemannic; Alsatian, Syriac, Tagalog, Tahitian, Tai languages, Tajik, Tamashek, Tamil, Tatar, Telugu, Tereno, Tetum, Thai, Tibetan, Tigre, Tigrinya, Timne, Tiv, Tlingit, Tok Pisin, Tokelau, Tonga (Nyasa), Tonga (Tonga Islands), Tsimshian, Tsonga, Tswana, Tumbuka, Tupi languages, Turkish, Turkmen, Tuvalu, Tuvinian, Twi, Udmurt, Ugaritic, Uighur; Uyghur, Ukrainian, Umbundu, Uncoded languages, Undetermined, Upper Sorbian, Urdu, Uzbek, Vai, Venda, Vietnamese, Volapük, Votic, Wakashan languages, Walamo, Walloon, Waray, Washo, Welsh, Western Frisian, Wolof, Xhosa, Yakut, Yao, Yapese, Yiddish, Yoruba, Yupik languages, Zande languages, Zapotec, Zaza; Dimili; Dimli; Kirdki; Kirmanjki; Zazaki, Zenaga, Zhuang; Chuang, Zulu, Zuni) for this property.

95

Monoclonal antibodies to DNA modified with cis- or trans-diamminedichloroplatinum(II)  

SciTech Connect (OSTI)

Murine monoclonal antibodies that bind selectively to adducts formed on DNA by the antitumor drug cis-diamminedichloroplatinum(II), cis-DDP, or to the chemothrapeutically inactive trans isomer trans-DDP were elicited by immunization with calf thymus DNA modified with either cis- or trans-DDP at ratios of bound platinum per nucleotide, (D/N)/sub b/, of 0.06-0.08. The binding of two monoclonal antibodies to cis-DDP-modified DNA was competitively inhibited in an enzyme-linked immunosorbent assay (ELISA) by 4-6 nM concentrations of cis-DDP bound to DNA. Adducts formed by cis-DDP on other synthetic DNA polymers did not inhibit antibody binding to cis-DDP-DNA. The biologically active compounds (Pt(en)Cl/sub 2/), (Pt(dach)Cl/sub 2/), and (Pt(NH/sub 3/)/sub 2/(cbdca)) (carboplatin) all formed antibody-detectable adducts on DNA, whereas the inactive platinum complexes trans-DDP and (Pt(dien)Cl)Cl (dien, diethylenetriamine) did not. The monoclonal antibodies therefore recognize a bifunctional Pt-DNA adduct with cis stereochemistry in which platinum is coordinated by two adjacent guanines or, to a lesser degree, by adjacent adenine and guanine. A monoclonal antibody raised against trans-DDP-DNA was competitively inhibited in an ELISA by 40 nM trans-DDP bound to DNA. This antibody crossreacted with unmodified, denatured DNA. The recognition of cis- or trans-DDP-modified DNAs by monoclonal antibodies thus parallels the known modes of DNA binding of these compounds and may correlate with their biological activities.

Sundquist, W.I.; Lippard, S.J.; Stollar, B.D.

1987-12-01T23:59:59.000Z

96

Group velocities in coplanar strip transmission lines on Si and Si/SiO2 /Si substrates measured using differential electro-optic sampling  

E-Print Network [OSTI]

Group velocities in coplanar strip transmission lines on Si and Si/SiO2 /Si substrates measured 1996; accepted for publication 26 August 1996 The group velocities in coplanar strip transmission lines-9 Velocity measurements have been previously carried out for coplanar transmission lines on a variety

97

Large magnetoresistance in Si : B - Si O 2 - Al structures  

Science Journals Connector (OSTI)

A magnetic-field-dependent resistance change of eight orders of magnitude is observed in boron-doped Si - Si O 2 - Al structures. In order to identify the elementary mechanisms governing this phenomenon the thickness of the oxidic layer which is used as an interface energy barrier has been varied by changing the exposure time to an oxygen plasma. Next the chemical composition has been monitored by in situx-ray photoelectron spectroscopymeasurements. From current-voltage measurements we observe that at low temperatures an ultrathin Si O 2 layer provides the kinetic energy to trigger an autocatalytic process of impact ionization. A magnetic field suppresses the onset of impact ionization to higher electric fields resulting in a large magnetoresistance.

J. J. H. M. Schoonus; J. T. Kohlhepp; H. J. M. Swagten; B. Koopmans

2008-01-01T23:59:59.000Z

98

Microsoft Word - CX-CentraliaTap_Chehalis-Covington_TransAlta_WoodPoles_WEB.doc  

Broader source: Energy.gov (indexed) [DOE]

6, 2011 6, 2011 REPLY TO ATTN OF: KEP-4 SUBJECT: Environmental Clearance Memorandum Chad Caldwell Customer Service Engineer - TPC-Olympia Proposed Action: Replace aging wood poles on Trans Alta's Centralia Tap to Chehalis- Covington No. 1 230-kV transmission line. Budget Information: As per agreement with Trans Alta PP&A Project No.: N/A Categorical Exclusion Applied (from Subpart D, 10 C.F.R. Part 1021): B1.3 Routine maintenance activities... for...rights-of-way, infrastructures (e.g.. roads)... routine maintenance activities, corrective...are required to maintain and preserve infrastructures...in a condition suitable for the facility to be used for its designated purpose. Location: The project is located on Trans Alta's Centralia Tap to Chehalis-Covington No. 1

99

Trans-Atlantic Workshop on Rare Earth Elements and Other Critical Materials  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Trans-Atlantic Workshop on Rare Earth Elements and Other Critical Trans-Atlantic Workshop on Rare Earth Elements and Other Critical Materials for a Clean Energy Future Trans-Atlantic Workshop on Rare Earth Elements and Other Critical Materials for a Clean Energy Future December 3, 2010 Session A: Setting the Scene - Critical Materials for a Clean Energy Future Diana Bauer, Office of Policy and International Affairs, U.S. Department of Energy, Highlights of the DOE Critical Materials Strategy Antje Wittenberg, Directorate General for Enterprise and Industry, The EU Raw Materials Initiative and the Report of the Ad-hoc Group (tbc) Tom Lograsso, Ames Laboratory (Iowa State University), Future Directions in Rare Earth Research: Critical Materials for 21st Century Industry Derk Bol, Materials Innovation Institute M2i (Netherlands) M2i, Material

100

SiC-nanoparticle-reinforced Si3N4 matrix composites  

Science Journals Connector (OSTI)

Hot-pressed nanosized SiC-particle (SiCp-reinforced Si3N4 composites have been studied with respect to their microstructures, room temperature mechanical properties and thermal shock resistance. The experimental ...

Lei Tian; Yu Zhou; Wen-Liang Zhou

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Thermodynamics of FeSi  

Science Journals Connector (OSTI)

We show that a simple model involving two narrow (?500 K) peaks in the density of states (DOS) at the edges of a narrow (?1000 K) gap can account for the observed anomalies in the magnetic susceptibility, specific heat, thermal expansion, and elastic response of FeSi. We also show that the resistivity of FeSi, including the metal-insulator ‘‘transition’’ at about 300 K, is well described by this model. Recent band-structure calculations, although predicting the correct value for the semiconducting gap, are unable to account for the narrow peaks in the DOS needed to explain the thermodynamics. We conclude that, given the available alternatives, a Kondo insulator description—involving an extreme renormalization of the noninteracting bands—is most appropriate for FeSi.

D. Mandrus; J. L. Sarrao; A. Migliori; J. D. Thompson; Z. Fisk

1995-02-15T23:59:59.000Z

102

Vinylboranes as trans-dihydroxyethylene equivalents in Diels-Alder reactions  

E-Print Network [OSTI]

-Bis[dichloroboryl]ethylene is synthesized by the addition of B2C14 to acetylene and subsequent isomerisation by irradiation (Scheme 27). 32 However, this synthetic route to trans-bis[dichloroboryl]ethylene not readily available, because the only one way to synthesize B2C14...-Bis[dichloroboryl]ethylene is synthesized by the addition of B2C14 to acetylene and subsequent isomerisation by irradiation (Scheme 27). 32 However, this synthetic route to trans-bis[dichloroboryl]ethylene not readily available, because the only one way to synthesize B2C14...

Redman, Aniko Maria

2012-06-07T23:59:59.000Z

103

Intern experience at Tech Tran Corporation, Naperville, Illinois: an internship report  

E-Print Network [OSTI]

Corporation Naperville, Illinois. (May, 1983) John Arthur Campbell, B.S.I.E., West Virginia University; M.S.I.E., Texas A&M University Chairman of Advisory Committee: Dr. Robert Young This report presents a survey of the author?s internship experience..., present and future development efforts, and forecasting the expected growth of the i n du s t r y . INTRODUCTION This report describes the author?s Doctor of Engineering internship with Tech Tran Corporation , Naperville, Illinois. Tech Tran...

Campbell, John Arthur, 1947-

2013-03-13T23:59:59.000Z

104

Tab. 1. Physical characteristics of Si and 4H-SiC [1]. Property Si 4H-SiC  

E-Print Network [OSTI]

(107 cm/s) 1 2 Thermal conductivity (W/cm·K) 1.5 4.9 SiC-based High Efficiency Bidirectional Battery- tive power from internal battery storage. To maximize internal consumption, a high efficiency bidirectional DC-DC converter for the battery storage is necessary, as energy will be pro- cessed twice

Teodorescu, Remus

105

Analyses of interface adhesion between porous SiO2 low-k film and SiC/SiN layers by nanoindentation and nanoscratch tests  

Science Journals Connector (OSTI)

In this study, the interface adhesion between porous SiO"2 low-dielectric-constant film and SiN capping layer as well as SiC etch stop layer has been investigated. The SiN capping layer was found mostly composed of Si to N bonds, and the porous SiO"2 ... Keywords: Bonding configuration, Dielectrics, Interface adhesion

Shou-Yi Chang; Yi-Chung Huang

2007-02-01T23:59:59.000Z

106

SiNode Systems | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

SiNode Systems SiNode Systems National Clean Energy Business Plan Competition 2013 31 likes SiNode Systems Northwestern University SiNode Systems is a battery materials venture developing silicon-graphene anodes for the next generation of lithium-ion batteries. SiNode anodes offer higher battery capacity and faster charging rates, all while being produced via a low cost solution chemistry-based manufacturing process. SiNode seeks to change the landscape for lithium-ion batteries so they can meet the demands of a wide range of industries, from consumer electronics to electric vehicles. SiNode technology uses a composite of silicon nano-particles and porous graphene, developed by Dr. Harold H. Kung at Northwestern University. SiNode's anodes offer dramatic energy capacity increases (3200 mAh/g vs.

107

SiNode Systems | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

SiNode Systems SiNode Systems National Clean Energy Business Plan Competition 2013 31 likes SiNode Systems Northwestern University SiNode Systems is a battery materials venture developing silicon-graphene anodes for the next generation of lithium-ion batteries. SiNode anodes offer higher battery capacity and faster charging rates, all while being produced via a low cost solution chemistry-based manufacturing process. SiNode seeks to change the landscape for lithium-ion batteries so they can meet the demands of a wide range of industries, from consumer electronics to electric vehicles. SiNode technology uses a composite of silicon nano-particles and porous graphene, developed by Dr. Harold H. Kung at Northwestern University. SiNode's anodes offer dramatic energy capacity increases (3200 mAh/g vs.

108

SiNode Systems | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

SiNode Systems SiNode Systems National Clean Energy Business Plan Competition 2013 31 likes SiNode Systems Northwestern University SiNode Systems is a battery materials venture developing silicon-graphene anodes for the next generation of lithium-ion batteries. SiNode anodes offer higher battery capacity and faster charging rates, all while being produced via a low cost solution chemistry-based manufacturing process. SiNode seeks to change the landscape for lithium-ion batteries so they can meet the demands of a wide range of industries, from consumer electronics to electric vehicles. SiNode technology uses a composite of silicon nano-particles and porous graphene, developed by Dr. Harold H. Kung at Northwestern University. SiNode's anodes offer dramatic energy capacity increases (3200 mAh/g vs.

109

Expression and Trans-Specific Polymorphism of Self-Incompatibility RNases in Coffea (Rubiaceae)  

E-Print Network [OSTI]

Expression and Trans-Specific Polymorphism of Self- Incompatibility RNases in Coffea (Rubiaceae Recherche ``Re´sistance des Plantes aux Bioagresseurs'', Montpellier, France Abstract Self-incompatibility understory trees in which the vast majority of diploid species utilize a mechanism of gametophytic self-incompatibility

Yoder, Anne

110

Cotton Performance Tests in the Texas High Plains and Trans-Pecos Areas of Texas 20081/  

E-Print Network [OSTI]

Cotton Performance Tests in the Texas High Plains and Trans-Pecos Areas of Texas 20081/ J.K. Dever; Area Agronomist-Cotton, Extension Entomologist, Texas AgriLife Extension, Lubbock; Research Scientist......................................................................................................................... 6 Table UNIFORM COTTON VARIETY TESTS - IRRIGATED Lubbock 1 Production Information

Mukhtar, Saqib

111

Cotton Performance Tests in the Texas High Plains and Trans-Pecos Areas of Texas 20071/  

E-Print Network [OSTI]

Cotton Performance Tests in the Texas High Plains and Trans-Pecos Areas of Texas 20071/ J, Lubbock; Area Agronomist-Cotton, Extension Program Specialist, Texas AgriLife Extension, Lubbock; Research......................................................................................................................... 6 Table COTTON VARIETY TESTS - IRRIGATED Lamesa 1 Production Information

Mukhtar, Saqib

112

EIS-0139: Trans-Alaska Gas System Final Environmental Impact Statement  

Broader source: Energy.gov [DOE]

This EIS analyzes the Yukon Pacific Corporation (YPC) proposed construction of the Trans-Alaska Gas System (TAGS) a 796.5 mile long 36-inch diameter pipeline to transport High Pressured Natural Gas between Prudhoe Bay and a Tidewater terminal and LNG Plant near Anderson Bay, AK.

113

1996 National Heat Trans/er Conference Houston, TX August 3-6, J996  

E-Print Network [OSTI]

and diffusive transport associated with fluid dynamics. radiative heat transfer often plays a large role in governing combustion dynamics. Radiative heat transfer is the dominant mode of heat transfer in many1996 National Heat Trans/er Conference Houston, TX August 3-6, J996 AN ADAPTIVE MESH REFINEMENT

114

Regional groundwater flow paths in Trans-Pecos, Texas inferred from oxygen,  

E-Print Network [OSTI]

and hydrogen, oxygen, and strontium isotopes. dD and d18 O values fall close to the global meteoric water lineRegional groundwater flow paths in Trans-Pecos, Texas inferred from oxygen, hydrogen, and strontium isotopes, and major ion chemistry are used to con- strain flow paths in a fracture-controlled regional

Banner, Jay L.

115

BULLETIN OF THE UNITED STATES FISH COMMISSION. 207 [ Trans1stion.J  

E-Print Network [OSTI]

-pumpfastened to the lower side of the bottom of tho car, forced iuto the tank The necessarS power is, during the journey, is the construction of a car for the transportation of fresh salt-water fish, by employing atank, by intro- ducingBULLETIN OF THE UNITED STATES FISH COMMISSION. 207 [ Trans1stion.J PACILALY'S CAR WOR TRANWPOKTING

116

IEEE/ACM TRANS. ON NETWORKING, TO APPEAR 1 Utility Optimal Scheduling in Energy Harvesting  

E-Print Network [OSTI]

the environment. For instance, by converting me- chanical vibration into energy [1], by using solar panels [2IEEE/ACM TRANS. ON NETWORKING, TO APPEAR 1 Utility Optimal Scheduling in Energy Harvesting Networks performance in energy harvesting networks with only finite capacity energy storage devices. In these networks

Huang, Longbo

117

ACCEPTED TO IEEE TRANS. IMAGE PROCESSING. AUGUST 2007 1 EntropyControlled Quadratic Markov Measure  

E-Print Network [OSTI]

ACCEPTED TO IEEE TRANS. IMAGE PROCESSING. AUGUST 2007 1 Entropy­Controlled Quadratic Markov Measure analy- sis and image editing tasks. Its importance for low-level image processing stems from several, reduction in memory requirements or error reduction will have an important impact in many image processing

Rivera, Mariano

118

http://mc.manuscriptcentral.com/issue-ptrsa Submitted to Phil. Trans. R. Soc. A -Issue  

E-Print Network [OSTI]

strong correlation between rates of metals usage and Gross Domestic Product (GDP) (R2 = 0.79), with per on the order of a third of the total worldwide primary energy use per year (~ 160 EJ), and contributing://mc.manuscriptcentral.com/issue-ptrsa Submitted to Phil. Trans. R. Soc. A - Issue #12;ForReview Only 1 The Energy Required to Produce Materials

Gutowski, Timothy

119

Initial Tests for an Analog Continuum Correlator for CMB Interferometry Huan T. Tran  

E-Print Network [OSTI]

: Lyman Page Abstract We are proposing to build a high frequency interferometer to study the CMB;2 Initial Tests for an Analog Continuum Correlator for CMB Interferometry Huan T. Tran Abstract We-15) and work below 35 GHz and hence rely heavily on HEMT technology. We are in the initial planning stages

120

GeoTran-HC: Geometric transformation of highly coupled variable topology multi-body problems  

Science Journals Connector (OSTI)

Manipulating geometry to prepare a CAD design model for mesh generation is an important step in the finite element analysis (FEA) process. However, complex problems such as electronic chip packages often consist of hundreds or even thousands of sub-features ... Keywords: Cell decomposition, Chip package, FEA modeling, GeoTran-HC, Geometrical transformation, Knowledge-based design and analysis

Sai Zeng; Angran Xiao; Russell S. Peak

2007-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication Applications  

E-Print Network [OSTI]

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication ApplicationsGe/Si-based optoelectronic devices are described. These include photodiodes, photoreceivers and modulators. In There is immense interest in the realization of Si-based optoelectronic devices, optoelectronic integrated circuits

Rieh, Jae-Sung

122

Rsistance au dommage local de basse nergie d'un composite SiC/SiC  

E-Print Network [OSTI]

. These results can be compared to impact resistance of ceramic matrix composites published in the literatureRésistance au dommage local de basse énergie d'un composite SiC/SiC Resistance to Low Energy Impact Damage for a SiC/SiC Composite Vincent Herb 1 , Eric Martin 1 et Jacques Lamon 1 1 : Laboratoire des

Paris-Sud XI, Université de

123

Synthesis and Characterization of Compositionally Graded Si1...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Compositionally Graded Si1-xGex Layers on Si substrate. Synthesis and Characterization of Compositionally Graded Si1-xGex Layers on Si substrate. Abstract: Thin film of silicon...

124

SiC Power Module  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

R&D 100 Entry R&D 100 Entry SiC Power Module 2 R&D 100 Entry SiC Power Module Submitting OrganizatiOn Sandia National Laboratories PO Box 5800, MS 1033 Albuquerque, NM 87185-1033 USA Stanley Atcitty Phone: 505-284-2701 Fax: 505-844-2890 satcitt@sandia.gov AFFIRMATION: I affirm that all information submitted as a part of, or supplemental to, this entry is a fair and accurate representation of this product. _____________________________________ Stanley Atcitty JOint Entry Arkansas Power Electronics International, Inc.; University of Arkansas; Rohm Co., LTD.; and the Department of Energy/ Energy Storage Program. 1. 1. Arkansas Power Electronics International, Inc. 535 W. Research Center Blvd. Fayetteville, AR 72701 USA Alexander B. Lostetter, President & CEO Phone: 479-443-5759

125

SiC/SiC Composite for an Advanced Fusion Power Plant Blanket A. R. Raffray1  

E-Print Network [OSTI]

SiC/SiC Composite for an Advanced Fusion Power Plant Blanket A. R. Raffray1 , L. El-Guebaly2 , D. K, and constraints relating to the SiC/SiC properties are discussed. INTRODUCTION The use of SiC/SiC composite

126

Propagation of misfit dislocations from buffer/Si interface into Si  

DOE Patents [OSTI]

Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

Liliental-Weber, Zuzanna (El Sobrante, CA); Maltez, Rogerio Luis (Porto Alegre, BR); Morkoc, Hadis (Richmond, VA); Xie, Jinqiao (Raleigh, VA)

2011-08-30T23:59:59.000Z

127

Effect of theo-polyphenols ( ) on function of trans-membranous signal system of acute ischemic myocardium in rats) on function of trans-membranous signal system of acute ischemic myocardium in rats  

Science Journals Connector (OSTI)

Objective...: To observe the effect of theo-polyphenols (TP) on function of trans-membranous signal of acute ischemic myocardium in rats.Methods...: Model of myocardial ischemia was established. ...

Ke Yongsheng; Liu Zhaofang; Zhao Zhendong

1999-09-01T23:59:59.000Z

128

The influence of TiSi2 and CoSi2 growth on Si native point defects: The role of the diffusing species  

E-Print Network [OSTI]

from codeposited metal and Si. The as-deposited films had the compositions Ti, TiSi0.8 , TiSi2 undersaturation.3 Nevertheless, the mechanism by which silicide films effect a perturbance in the point defect, causing a va- cancy supersaturation. The formation of CoSi2 from CoSi proceeds via diffusion of metal

Florida, University of

129

Integrated Market Modeling of Hydrogen Transition Scenarios with HyTrans  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Integrated Market Modeling of Integrated Market Modeling of Hydrogen Transition Scenarios with HyTrans Paul N. Leiby, David L. Greene and David Bowman Oak Ridge National Laboratory A presentation to the Hydrogen Delivery Analysis Meeting FreedomCAR and Fuels Partnership Delivery, Storage and Hydrogen Pathways Tech Teams May 8-9, 2007 Columbia, MD 2 OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY Drawing from several other DOE models, HyTrans integrates supply and demand in a dynamic non-linear market model to 2050. * H2A - Hydrogen Production - Hydrogen Delivery * PSAT & ASCM - Fuel economy - 2010/2015 cost & performance goals * ORNL Vehicle Choice Model - Fuel availability - Make & model diversity - Price, fuel economy, etc. * Vehicle Manufacturing Cost Estimates (assisted by OEMs)

130

Nonbinding agreements in Europe's trans-boundary river pollution: a first assessment  

Science Journals Connector (OSTI)

Deciding whether commitments should involve binding or nonbinding agreements is a crucial strategic element when it comes to designing effective governance systems. Up to now, legally binding treaties seem to be the preferred approach. More than 1500 bilateral and 1100 multilateral treaties have been signed according to one recent compilation. However, at least some have proven to be ineffective, if not counterproductive, for solving the problems they were negotiated for. Therefore, it is not surprising to see states increasingly use a different approach for solving trans-boundary environmental problems: nonbinding agreements. In contrast to signing legally binding treaties, state officials negotiate international norms that are intentionally nonbinding, but still possess legal relevance. This paper provides a first assessment of nonbinding agreements in Europe's trans-boundary river pollution. In particular, the paper focuses on the goals as well as on the achievements of nonbinding agreements and compare them with binding treaties.

Martin Köppel

2014-01-01T23:59:59.000Z

131

The Trans-Africa Pipeline: Building a Sustainable Water Generation and Distribution Network  

E-Print Network [OSTI]

The Trans-Africa Pipeline (TAP), the vision of University of Toronto professor emeritus Rod Tennyson, aims to mitigate poverty, disease, desertification, and conflict in Africa’s Sahel1 region through the daily provision of roughly one billion litres of fresh water to 20 million people for domestic and agricultural use (Tennyson, n.d; Tennyson et al, n.d). As the effects of climate change become more pronounced,

unknown authors

2011-01-01T23:59:59.000Z

132

Exergy analysis of SI engines  

Science Journals Connector (OSTI)

In this study, exergy (availability) analysis of a Spark Ignition (SI) engine has been performed theoretically during compression, combustion and expansion processes of the engine cycle. For this purpose, a thermodynamic-based engine cycle model is developed without considering the geometric features of fluid motion. Through the analysis, the effects of changing some design and operating parameters, such as compression ratio, fuel-air equivalence ratio and spark timing on the variation and destruction of exergy have been investigated. It was obtained that design and operation conditions have considerable effects on the variation of exergy and irreversibilities during investigated parts of the cycle.

Ismet Sezer; Atilla Bilgin

2008-01-01T23:59:59.000Z

133

Reconstruction on Si(100) surfaces  

Science Journals Connector (OSTI)

We have observed several reconstructions on a Si(100) surface with different annealing procedures. The observed reconstructed phases are the coexistence of the (2×2) phase and the (2×8) phase after high-temperature (?950 K) annealing followed by quenching, and the half-order streak with the presence of the (2×1) phase after low-temperature (?950 K) annealing. The phase transition from the metastable (2×2) and (2×8) phases to the stable half-order streak is reversible upon annealing temperature and cooling rate. The distribution of kinks and missing dimer defects is expected to be the main cause of these reconstructions.

Young Joo Lee; Sehun Kim; Chi-Sun Hwang; C. Lee; Chanyong Hwang

1994-10-15T23:59:59.000Z

134

Vehicle Technologies Office Merit Review 2014: Transportation Energy Transition Modeling and Analysis: the LAVE-Trans Model  

Broader source: Energy.gov [DOE]

Presentation given by Oak Ridge National Laboratory at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about the LAVE-Trans...

135

SiD Letter of Intent  

SciTech Connect (OSTI)

This document presents the current status of the Silicon Detector (SiD) effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R and D needed to provide the technical basis for an optimised SiD.

Aihara, H., (Ed.); Burrows, P., (Ed.); Oreglia, M., (Ed.); Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; /Argonne, HEP; Zhang, Q.; /Argonne, HEP /Beijing, Inst. High Energy Phys.; Srivastava, A.; /Birla Inst. Tech. Sci.; Butler, J.M.; /Boston U.; Goldstein, Joel; Velthuis, J.; /Bristol U.; Radeka, V.; /Brookhaven; Zhu, R.-Y.; /Caltech.; Lutz, P.; /DAPNIA, Saclay; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; /CERN /Cornell U., LNS /Ewha Women's U., Seoul /Fermilab /Gent U. /Darmstadt, GSI /Imperial Coll., London /Barcelona, Inst. Microelectron. /KLTE-ATOMKI /Valencia U., IFIC /Cantabria Inst. of Phys. /Louis Pasteur U., Strasbourg I /Durham U., IPPP /Kansas State U. /Kyungpook Natl. U. /Annecy, LAPP /LLNL, Livermore /Louisiana Tech. U. /Paris U., VI-VII /Paris U., VI-VII /Munich, Max Planck Inst. /MIT, LNS /Chicago, CBC /Moscow State U. /Nanjing U. /Northern Illinois U. /Obninsk State Nucl. Eng. U. /Paris U., VI-VII /Strasbourg, IPHC /Prague, Inst. Phys. /Princeton U. /Purdue U. /Rutherford /SLAC /SUNY, Stony Brook /Barcelona U. /Bonn U. /UC, Davis /UC, Santa Cruz /Chicago U. /Colorado U. /Delhi U. /Hawaii U. /Helsinki U. /Indiana U. /Iowa U. /Massachusetts U., Amherst /Melbourne U. /Michigan U. /Minnesota U. /Mississippi U. /Montenegro U. /New Mexico U. /Notre Dame U. /Oregon U. /Oxford U. /Ramon Llull U., Barcelona /Rochester U. /Santiago de Compostela U., IGFAE /Hefei, CUST /Texas U., Arlington /Texas U., Dallas /Tokyo U. /Washington U., Seattle /Wisconsin U., Madison /Wayne State U. /Yale U. /Yonsei U.

2012-04-11T23:59:59.000Z

136

Overview of HIT-SI Diagnostic Systems  

Science Journals Connector (OSTI)

The Helicity Injected Torus with Steady Inductive current drive (HIT-SI) device is a spheromak which uses two inductively driven helicity injectors...

R. G. O’Neill; R. J. Smith; C. Akcay; W. T. Hamp…

2007-06-01T23:59:59.000Z

137

Investigation of lateral gated quantum devices in Si/SiGe heterostructures  

E-Print Network [OSTI]

Quantum dots in Si/SiGe have long spin decoherence times, due to the low density of nuclear spins and weak coupling between nuclear and electronic spins. Because of this, they are excellent candidates for use as solid state ...

Lai, Andrew P. (Andrew Pan)

2013-01-01T23:59:59.000Z

138

Structure of Si-capped Ge/SiC/Si (001) epitaxial nanodots: Implications for quantum dot patterning  

SciTech Connect (OSTI)

Artificially ordered quantum dot (QD) arrays, where confined carriers can interact via direct exchange coupling, may create unique functionalities such as cluster qubits and spintronic bandgap systems. Development of such arrays for quantum computing requires fine control over QD size and spatial arrangement on the sub-35 nm length scale. We employ electron-beam irradiation to locally decompose ambient hydrocarbons onto a bare Si (001) surface. These carbonaceous patterns are annealed in ultra-high vacuum (UHV), forming ordered arrays of nanoscale SiC precipitates that have been suggested to template subsequent epitaxial Ge growth to form ordered QD arrays. We show that 3C-SiC nanodots form, in cube-on-cube epitaxial registry with the Si substrate. The SiC nanodots are fully relaxed by misfit dislocations and exhibit small lattice rotations with respect to the substrate. Ge overgrowth at elevated deposition temperatures, followed by Si capping, results in expulsion of the Ge from SiC template sites due to the large chemical and lattice mismatch between Ge and C. Maintaining an epitaxial, low-defectivity Si matrix around the quantum dots is important for creating reproducible electronic and spintronic coupling of states localized at the QDs.

Petz, C. W.; Floro, J. A. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Yang, D.; Levy, J. [Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260 (United States)

2012-04-02T23:59:59.000Z

139

Chemical-equilibrium model of optimal a-Si:H growth from SiH4  

Science Journals Connector (OSTI)

A model of optimal hydrogenated-amorphous-silicon growth based on bulk chemical reactions involving Si-Si and Si-H bonds is proposed. The optimal growth temperature is determined by the balance between the rate of hydrogen diffusion and the rate of film growth.

K. Winer

1990-04-15T23:59:59.000Z

140

University of California and HRL Laboratories, LLC. All rights reserved. SiGe/Si SUPERLATTICE COOLERS  

E-Print Network [OSTI]

for SiGe/Si superlattice coolers. SiGe is a good thermoelectric material for high temperature and thermally in parallel, similar to conventional thermoelectric devices, and thus achieve large cooling of the barriers to further increase clock speeds and decrease feature sizes. Thermoelectric (TE) refrigeration

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141

Analysis of light-induced degradation mechanisms in ?-Si:H/?c-Si:H solar photovoltaics  

Science Journals Connector (OSTI)

The photoinduced degradation of the i-?-Si:H layer in tandem photovoltaic converters based on ?-Si:H/?c-Si:H structures is analyzed in terms of the “H-collision-” and “floating-bond” models and modifications of t...

V. M. Emelyanov; A. S. Abramov; A. V. Bobyl; V. N. Verbitsky…

2013-09-01T23:59:59.000Z

142

SiGeC Near Infrared Photodetectors  

E-Print Network [OSTI]

A near infrared waveguide photodetector in Si-based ternary Si?â??xâ??yGexCy alloy was demonstrated for 0.85~1.06 µm wavelength fiber-optic interconnection system applications. Two sets of detectors with active absorption ...

Li, Baojun

143

Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions  

E-Print Network [OSTI]

Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions-Si and SiGe-on-insulator were fabricated, combining both the benefits of high-mobility strained-Si and SOI) to oxidized handle wafers. Layer transfer onto insulating handle wafers can be accomplished using grind

144

Analysis of a-Si:H/TCO contact resistance for the Si heterojunction back-contact solar cell  

E-Print Network [OSTI]

Analysis of a-Si:H/TCO contact resistance for the Si heterojunction back-contact solar cell Seung- circuit voltage (Voc) and the conversion efficiency of the Si solar cell. Recently, a-Si:H heterojunction (heterojunction with intrinsic thin layer) cell [1] even with practical-sized Czochralski-grown (CZ) wafer. The a-Si:H

Park, Byungwoo

145

Role of hydrogen in SiH{sub 2} adsorption on Si(100)  

SciTech Connect (OSTI)

When disilane (Si{sub 2}H{sub 6}) is used in the homoepitaxial growth of Si by chemical vapor deposition (CVD), the fragment SiH{sub 2} is believed to be the basic unit adsorbed on the surface. The bonding site of SiH{sub 2} on Si(100) has been proposed in the literature to be either on top of a dimer (the on-dimer site) or between two dimers in the same row (the intrarow site). Since the pathway of SiH{sub 2} combination is dependent on the adsorption site, a first-principles calculation will shed light on the underlying process. We have performed self-consistent pseudopotential density-functional calculations within the local-density approximation. On the bare Si(100) surface, the on-dimer site is found to be more stable than the intrarow site, even though the former has unfavorable Si-Si bond angles. This is ascribed to the extra dangling bond created in the latter geometry when the weak dimer {pi} bonds are broken. However, the presence of hydrogen adatoms eliminates this difference and makes the intrarow site more favorable than the on-dimer site. It is therefore revealed in this theoretical study that hydrogen, an impurity unavoidable in the CVD process, plays an important role in determining the stable configuration of adsorbed SiH{sub 2} on Si(100) and hence affects the growth mechanism. {copyright} {ital 1998} {ital The American Physical Society}

Hong, S.; Chou, M.Y. [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332-0430 (United States)] [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332-0430 (United States)

1998-11-01T23:59:59.000Z

146

Al/SiCp and Al11Si/SiCp coatings on AZ91 magnesium alloy by HVOF  

Science Journals Connector (OSTI)

Abstract High velocity oxygen-fuel (HVOF) thermal spray has been used to fabricate Al, Al11Si and metal matrix composite (Al/SiCp and Al11Si/SiCp) coatings on the AZ91 Mg alloy. Taguchi design of experiment (DOE) methodology was used to analyze the influence of the HVOF spraying conditions (% SiCp in feedstock, spraying distance, number of layers and gun speed) in the main characteristics of the coatings (actual amount of reinforcement in the coating, porosity and thickness) and in some properties of the coatings such as hardness and adhesion. In general, for the same HVOF spraying conditions, the coatings fabricated using Al11Si as matrix presented higher thickness and lower incorporation of reinforcement, as well as higher hardness and adhesion values in comparison with those of pure Al matrix coatings. Independently of the matrix used, the % SiCp in feedstock and spraying distance seem to be the most important spraying parameters in controlling the properties of the sprayed coatings.

B. Torres; C. Taltavull; A.J. López; M. Campo; J. Rams

2014-01-01T23:59:59.000Z

147

Effect of plasma treatments on interface chemistry and adhesion strength between porous SiO2 low-k film and SiC/SiN layers  

Science Journals Connector (OSTI)

In this study, the interface chemistry and adhesion strengths between porous SiO"2 low-dielectric-constant film and SiN capping layer as well as SiC etch stop layer have been investigated under different plasma treatments. Elements of Si, O, and N constructed ... Keywords: Bonding configuration, Dielectrics, Interface adhesion

Shou-Yi Chang; Yi-Chung Huang

2008-02-01T23:59:59.000Z

148

Geothermal exploration in Trans-Pecos, Texas/New Mexico. Final report  

SciTech Connect (OSTI)

Interest in alternative energy has encouraged the investigation of possible geothermal resources in Trans Pecos, Texas/New Mexico in an area of extensive Cenozoic volcanism with several hot springs. Geochemical analysis of groundwater samples resulted in the definition of two major areas of geothermal interest: the Hueco Bolson in northeastern El Paso County, and the Presidio Bolson. Regional temperature gradient measurements also supported the existence of anomalies in these places, and showed another smaller anomaly in the Finlay Mountains, Hudspeth County. Detailed geophysical and geochemical studies were conducted on these three targets.

Roy, R.; Taylor, B.; Miklas, M.P. Jr.

1983-09-01T23:59:59.000Z

149

Soil surface modification in the Trans-Pecos region of Texas  

E-Print Network [OSTI]

Percent composition by species; separated by treatment and strip width. 43 LIST OF FIGURES ~Fi ure 1 Tz'ans-Pecos soil surface modification study area. ~Pa e 10 INTRODUCTION Water is one of the most prized but limited natural resources... 0 0 2 0 Figure 1. Trans-Pecos soil surface modification study ares. level from 1-mf areas at 3. 05-m intervals on three perpendicular lines down slope of each treatment in early June and October 1979. One line was established 0. 9-m to the north...

Merrill, Clifton Edwards

2012-06-07T23:59:59.000Z

150

Synthesis and Characterization of Structured Si-Carbon Nanocomposite...  

Broader source: Energy.gov (indexed) [DOE]

Synthesis and Characterization of Structured Si-Carbon Nanocomposite Anodes and Functional Polymer Binders Synthesis and Characterization of Structured Si-Carbon Nanocomposite...

151

Hail Impact Testing on Crystalline Si Modules with Flexible Packaging...  

Broader source: Energy.gov (indexed) [DOE]

Hail Impact Testing on Crystalline Si Modules with Flexible Packaging Hail Impact Testing on Crystalline Si Modules with Flexible Packaging Presented at the PV Module Reliability...

152

tadiene is equivalentto the si-re face of the trans deuteriosubstrate, and thus we have previouslynotedthat formationof R(+) epoxidefrom octa-  

E-Print Network [OSTI]

an important model compound for studying selective ion transport in biological and synthetic membranes+ and to facilitate the transport of alkali cations across mi- tochondrial membranes with the same ~electivity 02139. Received March 26, I976 Abstract: The membrane-active antibiotic valinomycin has become

Stanley, H. Eugene

153

HIGH-ENERGY NEUTRINO AND GAMMA-RAY TRANSIENTS FROM TRANS-RELATIVISTIC SUPERNOVA SHOCK BREAKOUTS  

SciTech Connect (OSTI)

Trans-relativistic shocks that accompany some supernovae (SNe) produce X-ray burst emissions as they break out in the dense circumstellar medium around the progenitors. This phenomenon is sometimes associated with peculiar low-luminosity gamma-ray bursts (LL GRBs). Here, we investigate the high-energy neutrino and gamma-ray counterparts of such a class of SNe. Just beyond the shock breakout radius, particle acceleration in the collisionless shock starts to operate in the presence of breakout photons. We show that protons may be accelerated to sufficiently high energies and produce high-energy neutrinos and gamma rays via the photomeson interaction. These neutrinos and gamma rays may be detectable from {approx}< 10 Mpc away by IceCube/KM3Net as multi-TeV transients almost simultaneously with the X-ray breakout, and even from {approx}< 100 Mpc away with follow-up observations by the Cherenkov Telescope Array using a wide-field sky monitor like Swift as a trigger. A statistical technique using a stacking approach could also be possible for the detection, with the aid of the SN optical/infrared counterparts. Such multi-messenger observations offer the possibility to probe the transition of trans-relativistic shocks from radiation-mediated to collisionless ones, and would also constrain the mechanisms of particle acceleration and emission in LL GRBs.

Kashiyama, Kazumi; Gao, Shan; Meszaros, Peter [Center for Particle and Gravitational Astrophysics, Department of Astronomy and Astrophysics, Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Murase, Kohta; Horiuchi, Shunsaku, E-mail: kzk15@psu.edu [CCAPP and Department of Physics, Ohio State University, 191 W. Woodruff Avenue, Columbus, OH 43210 (United States)

2013-05-20T23:59:59.000Z

154

MONTE CARLO SIMULATIONS OF NONLINEAR PARTICLE ACCELERATION IN PARALLEL TRANS-RELATIVISTIC SHOCKS  

SciTech Connect (OSTI)

We present results from a Monte Carlo simulation of a parallel collisionless shock undergoing particle acceleration. Our simulation, which contains parameterized scattering and a particular thermal leakage injection model, calculates the feedback between accelerated particles ahead of the shock, which influence the shock precursor and 'smooth' the shock, and thermal particle injection. We show that there is a transition between nonrelativistic shocks, where the acceleration efficiency can be extremely high and the nonlinear compression ratio can be substantially greater than the Rankine-Hugoniot value, and fully relativistic shocks, where diffusive shock acceleration is less efficient and the compression ratio remains at the Rankine-Hugoniot value. This transition occurs in the trans-relativistic regime and, for the particular parameters we use, occurs around a shock Lorentz factor ?{sub 0} = 1.5. We also find that nonlinear shock smoothing dramatically reduces the acceleration efficiency presumed to occur with large-angle scattering in ultra-relativistic shocks. Our ability to seamlessly treat the transition from ultra-relativistic to trans-relativistic to nonrelativistic shocks may be important for evolving relativistic systems, such as gamma-ray bursts and Type Ibc supernovae. We expect a substantial evolution of shock accelerated spectra during this transition from soft early on to much harder when the blast-wave shock becomes nonrelativistic.

Ellison, Donald C.; Warren, Donald C. [Physics Department, North Carolina State University, Box 8202, Raleigh, NC 27695 (United States); Bykov, Andrei M., E-mail: don_ellison@ncsu.edu, E-mail: ambykov@yahoo.com [Ioffe Institute for Physics and Technology, 194021 St. Petersburg (Russian Federation)

2013-10-10T23:59:59.000Z

155

Continuous-wave laser annealing of Si-rich oxide: A microscopic picture of macroscopic Si-SiO{sub 2} phase separation  

SciTech Connect (OSTI)

We report on the first observation of the macroscopic (long-range) Si-SiO{sub 2} phase separation in Si-rich oxide SiO{sub x}(x<2) obtained by continuous-wave laser annealing of free-standing SiO{sub x} films. The effect is analyzed by a unique combination of microscopic methods (Raman, transmission, photoluminescence, and infrared spectroscopy, transmission electron microscopy, electron energy loss spectroscopy, and x-ray photoelectron spectroscopy). Three regions can be distinguished on a SiO{sub x} free-standing film after 488 nm laser annealing at intensities above {approx}10{sup 4} W cm{sup -2}: central spot, ring around the central spot, and pristine film outside the irradiated area. In the pristine SiO{sub x} material, small Si nanocrystals (Si-nc) (diameters of a few nanometer) are surrounded by SiO{sub 2} with an addition of residual suboxides, the Si-nc being produced by annealing at 1100 deg. C in a furnace. The central spot of the laser-annealed area (up to {approx}30 {mu}m wide in these experiments) is practically free of Si excess and mainly consists of amorphous SiO{sub 2}. The ring around the central spot contains large spherical Si-nc (diameters up to {approx}100 nm) embedded in amorphous SiO{sub 2} without the presence of suboxides. Laser-induced temperatures in the structurally modified regions presumably exceed the Si melting temperature. The macroscopic Si-SiO{sub 2} phase separation is connected with extensive diffusion in temperature gradient leading to the Si concentration gradient. The present work demonstrates the advantages of high spatial resolution for analysis in materials research.

Khriachtchev, Leonid; Nikitin, Timur; Raesaenen, Markku; Domanskaya, Alexandra [Laboratory of Physical Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 (Finland); Boninelli, Simona; Iacona, Fabio [MATIS IMM CNR, Via Santa Sofia 64, I-95123 Catania (Italy); Engdahl, Anders [MAX-lab, Lund University, P.O. Box 118, 22100 Lund (Sweden); Juhanoja, Jyrki [Top Analytica, Ruukinkatu 4, FIN-20540 Turku (Finland); Novikov, Sergei [Electron Physics Laboratory, Aalto University, P.O. Box 3000, FIN-02015 HUT (Finland)

2010-12-15T23:59:59.000Z

156

SiN-SiC nanofilm: A nano-functional ceramic with bipolar magnetic semiconducting character  

SciTech Connect (OSTI)

Nowadays, functional ceramics have been largely explored for application in various fields. However, magnetic functional ceramics for spintronics remain little studied. Here, we propose a nano-functional ceramic of sphalerite SiN-SiC nanofilm with intrinsic ferromagnetic order. Based on first principles calculations, the SiN-SiC nanofilm is found to be a ferromagnetic semiconductor with an indirect band gap of 1.71?eV. By mean field theory, the Curie temperature is estimated to be 304?K, close to room temperature. Furthermore, the valence band and conduction band states of the nanofilm exhibit inverse spin-polarization around the Fermi level. Thus, the SiN-SiC nanofilm is a typical bipolar magnetic semiconductor in which completely spin-polarized currents with reversible spin polarization can be created and controlled by applying a gate voltage. Such a nano-functional ceramic provides a possible route for electrical manipulation of carrier's spin orientation.

Zhang, Jiahui; Li, Xingxing [Hefei National Laboratory for Physical Science at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Yang, Jinlong, E-mail: jlyang@ustc.edu.cn [Hefei National Laboratory for Physical Science at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)

2014-04-28T23:59:59.000Z

157

Flex Fuel Optimized SI and HCCI Engine  

Broader source: Energy.gov (indexed) [DOE]

mode engine for a blend of gasoline and E85 for the best fuel economy - Development of a cost effective and reliable dual combustion mode engine - Development of a model-based SI...

158

MA 16020 SI slide.pptx  

E-Print Network [OSTI]

SI Study Sessions for MA 16020 -? Spring 2015. Mondays. 4:30 – 5:20 KRCH 464. Tuesdays. 5:30 – 6:20 RHPH 162. Thursdays. 4:30 – 5:20 ARMS 1103.

OwenDavis

2015-01-12T23:59:59.000Z

159

High-performance Si microwire photovoltaics  

SciTech Connect (OSTI)

Crystalline Si wires, grown by the vapor–liquid–solid (VLS) process, have emerged as promising candidate materials for low-cost, thin-film photovoltaics. Here, we demonstrate VLS-grown Si microwires that have suitable electrical properties for high-performance photovoltaic applications, including long minority-carrier diffusion lengths (L{sub n} ? 30 µm) and low surface recombination velocities (S ? 70 cm·s{sup ?1}). Single-wire radial p–n junction solar cells were fabricated with amorphous silicon and silicon nitride surface coatings, achieving up to 9.0% apparent photovoltaic efficiency, and exhibiting up to ~600 mV open-circuit voltage with over 80% fill factor. Projective single-wire measurements and optoelectronic simulations suggest that large-area Si wire-array solar cells have the potential to exceed 17% energy-conversion efficiency, offering a promising route toward cost-effective crystalline Si photovoltaics.

Kelzenberg, Michael D.; Turner-Evans, Daniel B.; Putnam, Morgan C.; Boettcher, Shannon W.; Briggs, Ryan M.; Baek, Jae Y; Lewis, Nathan S.; Atwater, Harry A.

2011-01-01T23:59:59.000Z

160

Microstructure, strength and toughness of Si3N4-SiC whisker composites  

SciTech Connect (OSTI)

Si3N4-SiC whisker composites were fabricated using several routes (i.e., pressure filtration or CIP) followed by HP or HIP. The fracture strength ranges from 650 MPa to 750 MPa on account of the whiskers orientation. Compared to the Si3N4 matrix, the toughness is increased. A strong R-curve effect can be obtained, suggesting that, to be efficient, the whisker diameter must exceed a critical size. 13 refs.

Champion, E.; Goursat, P.; Besson, J.L.; Madigou, V.; Monthioux, M.; Lespade, P.

1992-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Disilane-based cyclic deposition/etch of Si, Si:P and Si1?yCy:P layers: I. The elementary process steps  

Science Journals Connector (OSTI)

We have benchmarked the 550 °C, 20 Torr growth of Si:P and Si1?yCy:P using SiH4 and Si2H6. P segregation has prevented us from reaching P+ ion concentrations in Si higher than a few 1019 cm?3 using SiH4; the resulting surface 'poisoning' led to a severe growth rate reduction. Meanwhile, [P+] increased linearly with the phosphine flow when using Si2H6 as the Si precursor; values as high as 1.7 ? 1020 cm?3 were obtained. The Si:P growth rate using Si2H6 was initially stable then increased as the PH3 flow increased. Mono-methylsilane flows 6.5–10 times higher were needed with Si2H6 than with SiH4 to reach the same substitutional C concentrations in intrinsic Si1?yCy layers ([C]subst. up to 1.9%). Growth rates were approximately six times higher with Si2H6 than with SiH4, however. 30 nm thick Si1?yCy layers became rough as [C]subst. exceeded 1.6% (formation of increasing numbers of islands). We have also studied the structural and electrical properties of 'low' and 'high' C content Si1?yCy:P layers (~ 1.5 and 1.8%, respectively) grown with Si2H6. Adding significant amounts of PH3 led to a reduction of the tensile strain in the films. This was due to the incorporation of P atoms (at the expense of C atoms) in the substitutional sites of the Si matrix. Si1?yCy:P layers otherwise became rough as the PH3 flow increased. Resistivities lower than 1 m? cm were nevertheless associated with those Si1?yCy:P layers, with P atomic concentrations at most 3.9 ? 1020 cm?3. Finally, we have quantified the beneficial impact of adding GeH4 to HCl for the low-temperature etching of Si. Etch rates 12–36 times higher with HCl + GeH4 than with pure HCl were achieved at 20 Torr. Workable etch rates close to 1 nm min?1 were obtained at 600 °C (versus 750 °C for pure HCl), enabling low-temperature cyclic deposition/etch strategies for the selective epitaxial growth of Si, Si:P and Si1?yCy:P layers on patterned wafers.

J M Hartmann; V Benevent; J P Barnes; M Veillerot; C Deguet

2013-01-01T23:59:59.000Z

162

X-ray absorption spectroscopy from H-passivated porous Si and oxidized Si nanocrystals  

SciTech Connect (OSTI)

Quantum confinement in nanoscale Si structures is widely believed to be responsible for the visible luminescence observed from anodically etched porous silicon (por-Si), but little is known about the actual size or shape of these structures. Extended x-ray absorption fine structure data from a wide variety of por-Si samples show significantly reduced average Si coordination numbers due to the sizable contribution of surface-coordinated H. (The IUSI ratios, as large as 1.2, were independently confirmed by ir-absorption and {alpha}-recoil measurements.) The Si coordinations imply very large surface/volume ratios, enabling the average Si structures to be identified as crystalline particles (not wires) whose dimensions are typically <15 {Angstrom}. Comparison of the size-dependent peak luminescence energies with those of oxidized Si nanocrystals, whose shapes are known, shows remarkable agreement. Furthermore, near-edge x-ray absorption fine structure measurements of the nanocrystals shows the outer oxide and interfacial suboxide layers to be constant over a wide range of nanocrystal sizes. The combination of these results effectively rules out surface species as being responsible for the observed visible luminescence in por-Si, and strongly supports quantum confinement as the dominant mechanism occurring in Si particles which are substantially smaller than previously reported or proposed.

Schuppler, S.; Marcus, M.A. [AT and T Bell Labs., Murray Hill, NJ (United States); Friedman, S.L. [Stanford Univ., Palo Alto, CA (United States). Dept. of Applied Physics] [and others

1994-11-01T23:59:59.000Z

163

Electronic Stopping Powers For Heavy Ions In SiC And SiO2. |...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) are utilized to measure the depth profiles of implanted Au ions in SiC for energies...

164

Characterization of SiGe/Si multi-quantum wells for infrared sensing  

SciTech Connect (OSTI)

SiGe epitaxial layers are integrated as an active part in thermal detectors. To improve their performance, deeper understanding of design parameters, such as thickness, well periodicity, quality, and strain amount, of the layers/interfaces is required. Oxygen (2–2500?×?10{sup ?9}?Torr) was exposed prior or during epitaxy of SiGe/Si multilayers. In this range, samples with 10?nTorr oxygen were processed to investigate layer quality and noise measurements. Temperature coefficient of resistance was also measured to evaluate the thermal response. These results demonstrate sensitivity of SiGe-based devices to size and location of defects in the structure.

Moeen, M.; Salemi, A.; Östling, M.; Radamson, H. H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640 Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)] [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

2013-12-16T23:59:59.000Z

165

One-dimensional Schottky contact between Er Si 2 nanowire and Si(001)  

Science Journals Connector (OSTI)

We have measured the electric properties of nanosized Schottky contacts formed between Er Si 2 nanowires (NWs) and a Si(001) substrate. Current vs voltage ( I - V ) measurement was performed by touching a scanning tunneling microscope tip to the NWs. The current density ( J ) through the Er Si 2 ? Si ( 001 ) interface increased as the width of the NWs decreased while no significant changes were observed upon changing the length of the NWs. The ideality factor was estimated by fitting the standard Schottky equation to the obtained J - V curves. Our results suggest that the tunneling component increases as the width of the NWs becomes smaller.

O. Kubo; Y. Shingaya; M. Aono; T. Nakayama

2006-01-01T23:59:59.000Z

166

Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix  

SciTech Connect (OSTI)

Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2011-07-15T23:59:59.000Z

167

EPR study of the cis-trans isomerization process in polyacetylene films P. Bernier (*), C. Linaya (**), M. Rolland (*) and M. Aldissi (**)  

E-Print Network [OSTI]

L-295 EPR study of the cis-trans isomerization process in polyacetylene films P. Bernier (*), C EPR we have studied the isomerization process converting cis-(CH)x films to the trans form upon-prepared pure cis-(CH)x (at - 78 °C) as evidenced by the absence of any EPR signal [3]. The presence of unpaired

Paris-Sud XI, Université de

168

Synthesis of 4-substituted-trans-1, 2-diaminocyclohexyl polyaminocarboxylate metal chelating agents for the preparation of stable radiometal antibody immunoconjugates for therapy and spect and pet imaging  

DOE Patents [OSTI]

Cyclo agents useful in forming antibody-metal conjugates useful for diagnostic and therapeutic purposes. New compounds and processes of forming these compounds are disclosed including 4-haloacetamido-trans-1,2-diaminocyclohexyl polyaminocarboxylate and 4-isothiocyanato-trans-1,2-diamino cyclohexane-N,N,N',N'-tetra acetic acid.

Mease, Ronnie C. (Coram, NY); Mausner, Leonard F. (Stony Brook, NY); Srivastava, Suresh C. (Setauket, NY)

1994-01-01T23:59:59.000Z

169

Synthesis of 4-substituted-trans-1, 2-diaminocyclohexyl polyaminocarboxylate metal chelating agents for the preparation of stable radiometal antibody immunoconjugates for therapy and SPECT and PET imaging  

DOE Patents [OSTI]

Cyclo agents are described which are useful in forming antibody-metal conjugates which are used for diagnostic and therapeutic purposes. New compounds and processes of forming these compounds are disclosed including 4-haloacetamido-trans-1,2diaminocyclohexyl polyaminocarboxylate and 4-isothiocyanato-trans-1,2diamino cyclohexane-N,N,N',N'-tetra acetic acid. No Drawings

Mease, R.C.; Mausner, L.F.; Srivastava, S.C.

1994-03-08T23:59:59.000Z

170

UHV-TEM-REM Studies of Si(111) Surfaces  

Science Journals Connector (OSTI)

...April 1991 research-article Articles UHV-TEM-REM Studies of Si(111) Surfaces...Theoretical Physics Supplement No. 106. 1991 UHV-TEM-REM Studies of Si(lll) Surfaces...Si evaporator, on the other hand, was UHV-TEM-REM Studies of Si(lll) Surfaces......

Katsumichi Yagi; Akira Yamanaka; Hiroaki Sato; Masashi Shima; Hironori Ohse; Soh-ichiro Ozawa; Yasumasa Tanishiro

1991-04-01T23:59:59.000Z

171

Molecular beam epitaxial growth of Si1?xGex/Si pseudomorphic layers using disilane and germanium  

Science Journals Connector (OSTI)

Molecular beam epitaxial growth of pseudomorphic Si1?xGex/Si layers using disilane (Si2H6) and elemental germanium has been studied for the first time. It is found that at a fixed flow rate of Si2H6, the germaniu...

S. H. Li; P. K. Bhattacharya; R. Malik; E. Gulari

1993-07-01T23:59:59.000Z

172

Residual Stress in CVD-grown 3C-SiC Films on Si Substrates Alex A. Volinsky1  

E-Print Network [OSTI]

on 50 mm (100) and (111) Si substrates in a hot-wall CVD reactor. The film tensile residual stress was non-uniform, having a linear profile along the growth direction. This presented a challenge of using to deposit SiC on Si wafers due to their high quality and low cost, in comparison to SiC substrates. However

Volinsky, Alex A.

173

Disilane-based cyclic deposition/etch of Si, Si:P and Si1?yCy:P layers: II. The CDE features  

Science Journals Connector (OSTI)

We have developed innovative cyclic deposition/etch (CDE) processes in order to grow Si, Si:P and Si1–yCy:P raised sources and drains (RSDs) on patterned wafers. A Si2H6 + PH3 + SiCH6 chemistry was used for the 550 °C growth steps. Meanwhile, the selective etch of poly-crystalline layers on dielectrics was conducted at 600 °C with HCl + GeH4. We have first studied the specifics of those isobaric (P = 20 Torr) CDE processes on bulk, blanket Si(0 0 1) substrates. CDE-grown Si, Si:P and Si1?yCy(:P) layers were high crystalline quality and smooth, although these also contained 2–3% of Ge. Due to the preferential incorporation of P atoms in the lattice, the 'apparent' substitutional C content was higher for intrinsic than for in situ phosphorous-doped layers (1.29% versus 1.17% and 1.59% versus 1.47% for the two SiCH6 mass-flows probed). The atomic P concentration in our Si1?yCy:P layers was close to 2.6 ? 1020 cm?3, versus 2.1 ? 1020 cm?3 in the Si:P layers. The Si, Si:P and Si1?yCy(:P) thickness deposited in each CDE cycle decreased linearly as the HCl+GeH4 etch time increased, with the 'equivalent' etch rate (i.e. the slope of this linear decrease) being lower in intrinsic than in in situ doped layers. Higher C contents resulted in lower 'equivalent' etch rates. A CDE strategy suppressed the surface roughening occurring for high C content, several tens of nm thick Si1?yCy:P layers grown in one step only. We have then calibrated, for 19–23 nm thick CDE-grown Si, Si:P and Si1?yCy:P RSDs, the HCl + GeH4 etch time per step necessary to achieve full selectivity on patterned silicon-on-insulator substrates. Selectivity was obtained for intrinsic Si once 180 s etch steps were used. Longer etch times were needed for Si:P and especially Si1?yCy:P (270 and 315 s/CDE cycle, respectively). The resulting S/D areas were rather smooth and slightly facetted, but the un-protected poly-Si layers sitting on top of the gate stacks were completely removed with these etch times.

J M Hartmann; V Benevent; J P Barnes; M Veillerot; B Prévitali; P Batude

2013-01-01T23:59:59.000Z

174

TEAM HEV ARC HITECTURE ENGIN E FU EL TRANS MISSION EN ERGY STOR  

Broader source: Energy.gov (indexed) [DOE]

TEAM TEAM HEV ARC HITECTURE ENGIN E FU EL TRANS MISSION EN ERGY STOR AGE MO TOR Michigan Technological University Through-the-road Parallel 2.0-L 4 Cylinder Spark Ignition Reformulated Gasoline 4-speed Automatic COBASYS, Nickel Metal Hydride - 288V 50 kW Solectria AC Induction Transaxle Mississippi State University Through-the-road Parallel 1.9-L GM Direct Injection Turbo Diesel Bio Diesel (B20) GM F40 6-speed Manual Johnson Controls, Nickel Metal Hydride - 330V 45 kW Ballard Integrated Power Transaxle The Ohio State University Through-the-road Parallel 1.9-L GM Direct Injection Turbo Diesel Bio Diesel (B20) Aisin-Warner AF40 6-speed Automatic Transaxle Panasonic, Nickel Metal Hydride - 300V 67 kW Ballard AC Induction Transaxle /10.6 kW Kollmorgen Brushless DC Generator Pennsylvania State

175

Biotransformation of trans-1,1,1,3-tetrafluoropropene (HFO-1234ze)  

SciTech Connect (OSTI)

trans-1,1,1,3-Tetrafluoropropene (HFO-1234ze) is a non-ozone-depleting fluorocarbon replacement with a low global warming potential and is developed as foam blowing agent. The biotransformation of HFO-1234ze was investigated after inhalation exposure. Male Sprague-Dawley rats were exposed to air containing 2000; 10,000; or 50,000 ppm (n = 5/concentration) HFO-1234ze. Male B6C3F1 mice were only exposed to 50,000 ppm HFO-1234ze. All inhalation exposures were conducted for 6 h in a dynamic exposure chamber. After the end of the exposures, animals were individually housed in metabolic cages and urines were collected at 6 or 12 h intervals for 48 h. For metabolite identification, urine samples were analyzed by {sup 1}H-coupled and {sup 1}H-decoupled {sup 19}F-NMR and by LC/MS-MS or GC/MS. Metabolites were identified by {sup 19}F-NMR chemical shifts, signal multiplicity, {sup 1}H-{sup 19}F coupling constants and by comparison with synthetic reference compounds. In urine samples of rats exposed to 50,000 ppm HFO-1234ze, the predominant metabolite was S-(3,3,3-trifluoro-trans-propenyl)-mercaptolactic acid and accounted for 66% of all integrated {sup 19}F-NMR signals in urines. No {sup 19}F-NMR signals were found in spectra of rat urine samples collected after inhalation exposure to 2000 or 10,000 ppm HFO-1234ze likely due to insufficient sensitivity. S-(3,3,3-Trifluoro-trans-propenyl)-L-cysteine, N-acetyl-S-(3,3,3-trifluoro-trans-propenyl)-L-cysteine and 3,3,3-trifluoropropionic acid were also present as metabolites in urine samples of rats and mice. A presumed amino acid conjugate of 3,3,3-trifluoropropionic acid was the major metabolite of HFO-1234ze in urine samples of mice exposed to 50,000 ppm and related to 18% of total integrated {sup 19}F-NMR signals. Quantification of three metabolites in urines of rats and mice was performed, using LC/MS-MS and GC/MS. The quantified amounts of the metabolites excreted with urine in both mice and rats, suggest only a low extent (< 1% of dose received) of biotransformation of HFO-1234ze and 95% of all metabolites were excreted within 18 h after the end of the exposures (t{sub 1/2} app. 6 h). The obtained results suggest that HFO-1234ze is likely subjected to an addition-elimination reaction with glutathione and to a CYP 450 mediated epoxidation at low rates.

Schuster, Paul [Institut fuer Toxikologie, Universitaet Wuerzburg, Versbacher Str. 9, 97078 Wuerzburg (Germany); Bertermann, Ruediger [Institut fuer Anorganische Chemie, Universitaet Wuerzburg, Am Hubland, 97074 Wuerzburg (Germany); Rusch, George M. [Honeywell, P.O. Box 1057, Morristown, NJ 07962-1057 (United States); Dekant, Wolfgang [Institut fuer Toxikologie, Universitaet Wuerzburg, Versbacher Str. 9, 97078 Wuerzburg (Germany)], E-mail: dekant@toxi.uni-wuerzburg.de

2009-09-15T23:59:59.000Z

176

Reaction of trans-dichloro-bis[N(1)-methyl-2-(arylazo)imidazole] ruthenium(II) with tertiary phosphines  

Science Journals Connector (OSTI)

Trans-dichloro-bis[N(1)-methyl-2-(arylazo)imidazol e] ruthenium(II) (tcc-Ru(MeL)2Cl2) reacts with tertiary phosphines giving rise to species of type [RuCl(P)-(MeL)2]+ and [Ru(P-P)(MeL)2]2+ in which Cl, P and P...

Tarun Kumar Misra; Chittaranjan Sinha

1999-04-01T23:59:59.000Z

177

IEEE TRANS. AUTOM. CONTROL, SPECIAL ISSUE ON WIRELESS SENSOR AND ACTUATOR NETWORKS 1 Energy Optimized Topologies for Distributed  

E-Print Network [OSTI]

. We formulate the combinatorial optimization problem of selecting such a minimal energy tree that yield energy efficient bidirectional span- ning trees and establish associated bounds on the optimalIEEE TRANS. AUTOM. CONTROL, SPECIAL ISSUE ON WIRELESS SENSOR AND ACTUATOR NETWORKS 1 Energy

178

The introduction of electrochemical detection of trans-mitters1 and the development of the carbon fiber micro-  

E-Print Network [OSTI]

. During amperometric recordings, a carbon fiber electrode held at a positive potential is placed againstThe introduction of electrochemical detection of trans- mitters1 and the development of the carbon fiber micro- electrode2 have provided a means to directly measure vesicular release of neurotransmitters

Cai, Long

179

The Impact of Energy Shortage and Cost on Irrigation for the High Plains and Trans Pecos Regions of Texas  

E-Print Network [OSTI]

Plains and Trans Pecos regional economies is much greater than these statistics show. On the High Plains 86 percent of the cotton, 90 percent of the grain sorghum, and 75 percent of the wheat produced in 1974 was harvested from irrigated acreage. Rainfall...

Lacewell, R. D.; Condra, G. D.; Hardin, D. C.; Zavaleta, L.; Petty, J. A.

1978-01-01T23:59:59.000Z

180

Trans-Hudson orogen and Williston basin in Montana and North Dakota: New COCORP deep-profiling results  

E-Print Network [OSTI]

Trans-Hudson orogen and Williston basin in Montana and North Dakota: New COCORP deep) There is no evidence for a precursor rift basin beneath the axis of the Williston basin_ With the exception of small-scale structures (e.g., Nesson and Cedar Creek anticlines), the basement surface beneath the Williston basin

Jones, Alan G.

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

C.D. Tran, J. Near Infrared Spectrosc. 8, 89102 (2000) 89 NIR Publications 2000, ISSN 0967-0335  

E-Print Network [OSTI]

C.D. Tran, J. Near Infrared Spectrosc. 8, 89­102 (2000) 89 © NIR Publications 2000, ISSN 0967-0335 Visualising chemical composition and reaction kinetics by the near infrared multispectral imaging technique and near infrared has been developed. In this instrument, an acousto-optic tunable filter (AOTF) is used

Reid, Scott A.

182

To appear in IEEE Trans. on VLSI Systems, 2008 1 Abstract -This paper presents an energy-efficient packet  

E-Print Network [OSTI]

must resort to more energy-efficient architectures as they attempt to add more ports to the serverTo appear in IEEE Trans. on VLSI Systems, 2008 1 Abstract - This paper presents an energy as to minimize the total system energy dissipation while attaining performance goals. A key feature

Pedram, Massoud

183

IEEE TRANS. ON AUDIO, SPEECH AND LANGUAGE PROC., 2010 1 On the Information Geometry of Audio Streams  

E-Print Network [OSTI]

IEEE TRANS. ON AUDIO, SPEECH AND LANGUAGE PROC., 2010 1 On the Information Geometry of Audio Abstract--This paper proposes methods for information pro- cessing of audio streams using methods information as information entities, suitable for similarity and symbolic computing on audio signals

Paris-Sud XI, Université de

184

Film Si Solar Cells with Nano Si: Cooperative Research and Development Final Report, CRADA Number CRD-09-00356  

SciTech Connect (OSTI)

Nevada Nanotechnology Center and Si group at NREL will work together to develop a-Si based solar cells with nano-Si technique. We will explore the existing a-Si based film solar cell technology at NREL and nano scale Si technology at Nevada Nanotechnology Center. By exchanging information, we will come; up with some new cell structures using nano-Si. We expect the new a-Si based cells will have optical enhancement or better electronic or optical properties of absorber layer to improve solar cell performance.

Wang, Q.

2011-05-01T23:59:59.000Z

185

Pressure dependence of SiO 2 growth kinetics and electrical properties on SiC  

Science Journals Connector (OSTI)

Dry oxidations between 0.25 and 4 atm at 1150 ? ° C are used to characterize the pressure dependence of the growth kinetics of SiO 2 along three orientations of the 4H-SiC polytype. The growth curves are studied using the Deal-Grove model. The extracted linear and parabolic constants are found to scale linearly with the pressure up to 2 atm. However the data indicate that the (0001) Si-face exhibits a retarded growth rate above 2 atm. It is also found that like Si there is a critical oxide thickness below which the linear-parabolic model cannot be applied. This value is found to be between 36 and 40 nm for SiO 2 on 4H-SiC and is apparently independent of the crystal orientation and oxidation pressure. The extracted critical thickness and its properties are similar to what is observed on Si suggesting that the fast growth regime is dictated by the nature of the oxide. Finally it is shown that the density of interface states ( D i t ) on the (0001) Si-face is not reduced by faster oxide growth rates within the monitored energy window.

E. A. Ray; John Rozen; Sarit Dhar; L. C. Feldman; J. R. Williams

2008-01-01T23:59:59.000Z

186

Synthesis and microstructure of Cd4SiS6/Si composite nanowires  

Science Journals Connector (OSTI)

......and capped with a spherical tip. An interface...proved that the spherical tip is made of metallic...monoclinic Cd4SiS6 crystal, both silicon and...in Fig. 5d. The bent contrast within...clearly displaying the bent contrast. The inset...planar defects in Si crystals. (a) A stacking......

Jinhua Zhan; Yoshio Bando; Junqing Hu; Dmitri Golberg

2005-12-01T23:59:59.000Z

187

Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique  

SciTech Connect (OSTI)

Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height ?{sub B}, diode ideality factor ? were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity.

Demiro?lu, D. [Department of Metallurgical and Materials Engineering, Istanbul Technical University, Ayaza?a 34469, Istanbul (Turkey); Tatar, B. [Faculty of Arts and Sciences, Department of Physics, Nam?k Kemal University, De?irmenalt?, Tekirda? (Turkey); Kazmanli, K.; Urgen, M. [Department of Metallurgical and Materials Engineering, Istanbul Technical University, Ayaza?a 34469, Istanbul (Turkey)

2013-12-16T23:59:59.000Z

188

Si6H12/Polymer Inks for Electrospinning a-Si Nanowire Lithium Ion Battery Anodes  

SciTech Connect (OSTI)

Amorphous silicon nanowires 'a-SiNWs' have been prepared by electrospinning a liquid silane-based precursor. Cyclohexasilane 'Si6H12' was admixed with poly-methyl methacrylate (PMMA) in toluene giving an ink that was electrospun into the Si6H12/PPMA wires with diameters of 50-2000 nm. Raman spectroscopy revealed that thermal treatment at 350 C transforms this deposit into a-SiNWs. These materials were coated with a thin carbon layer and then tested as half-cells where a reasonable plateau in electrochemical cycling was observed after an initial capacity fade. Additionally, porous a-SiNWs were realized when the thermally decomposable binder polypropylene carbonate/polycyclohexene carbonate was used as the polymer carrier.

Schulz, Douglas L.; Hoey, Justin; Smith, Jeremiah; Elangovan, Arumugasamy; Wu, Xiangfa; Akhatov, Iskander; Payne, Scott; Moore, Jayma; Boudjouk, Philip; Pederson, Larry; Xiao, Jie; Zhang, Jiguang

2010-08-04T23:59:59.000Z

189

nanofabricaTion A Resource for Nanoscience  

E-Print Network [OSTI]

for waveguides · MEMS angle, force, and tactile sensors · MEMS gas analysis systems · Microfluidic systems

Blanchette, Robert A.

190

Comparison of the vacuum-ultraviolet radiation response of HfO{sub 2}/SiO{sub 2}/Si dielectric stacks with SiO{sub 2}/Si  

SciTech Connect (OSTI)

Vacuum ultraviolet (vuv) emitted during plasma processing degrades dielectrics by generating electron-hole pairs. VUV-induced charging of SiO{sub 2}/p-Si and HfO{sub 2}/SiO{sub 2}/p-Si dielectric stacks are compared. For SiO{sub 2}/p-Si, charging is observed for photon energies >15 eV by ionization of dielectric atoms from photoinjected electrons. In HfO{sub 2}/SiO{sub 2}/p-Si, charging is observed for photon >10 eV and is due to ionization by photoinjected electrons and by H{sup +} trapping in the HfO{sub 2}/SiO{sub 2} bulk. Hydrogen appears during annealing at the Si-SiO{sub 2} interface forming Si-H, which, during irradiation, is depassivated by photoinjected electrons. The authors conclude that dielectric charging in thin oxides (<10 nm) occurs more easily in HfO{sub 2}/SiO{sub 2} than in SiO{sub 2}.

Upadhyaya, G. S.; Shohet, J. L. [Plasma Processing and Technology Laboratory, and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

2007-02-12T23:59:59.000Z

191

Dissociation and pyrolysis of Si2H6 on Si surfaces: The influence of surface structure and adlayer composition  

Science Journals Connector (OSTI)

The reaction of disilane Si2H6 with the Si(100) and Si(111) surfaces has been examined with supersonic molecular beam scattering techniques. The emphasis has been on elucidating the reaction mechanism operative under conditions leading to steady?state Si epitaxial growth. Two reaction mechanisms have been identified: (i) complete pyrolysis to form two adsorbed Si atoms and gas phase hydrogen; and (ii) a reaction forming one adsorbed Si atom gas phase hydrogen and silane SiH4 as a gas phase product. The relative predominance of these two channels is sensitive to surface structure adlayer composition and incident kinetic energy. In particular only complete pyrolysis is observed on the clean Si(100)?(2×1) and Si(111)?‘‘(1×1)’’ surfaces. The silane production channel on the other hand is observed on the Si(111)?(7×7) surface and on the Si(100)?(2×1) surface in the presence of a finite coverage of either adsorbed hydrogen or phosphorus atoms. Examination of the reaction dynamics reveals that the probability of complete pyrolysis increases with increasing incident kinetic energy. Angular?resolved measurements of the scattered SiH4(g) product on the Si(111)?(7×7) surface suggest that silane is formed from the reaction of a chemisorbed intermediate. Comparison of the reaction probability of SiH4 and Si2H6 on the Si(111)?(7×7) surface as a function of incident kinetic energy suggests a similar decomposition mechanism for these two molecules namely Si–H bond activation. In this scenario SiH4(g) is formed via unimolecular thermal decomposition of an adsorbed Si2H5(a) species.

L.?Q. Xia; M. E. Jones; N. Maity; J. R. Engstrom

1995-01-01T23:59:59.000Z

192

Direct growth of graphene on Si(111)  

SciTech Connect (OSTI)

Due to the need of integrated circuit in the current silicon technology, the formation of graphene on Si wafer is highly desirable, but is still a challenge for the scientific community. In this context, we report the direct growth of graphene on Si(111) wafer under appropriate conditions using an electron beam evaporator. The structural quality of the material is investigated in detail by reflection high energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, high resolution scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. Our experimental results confirm that the quality of graphene is strongly dependent on the growth time during carbon atoms deposition.

Thanh Trung, Pham, E-mail: phamtha@fundp.ac.be; Joucken, Frédéric; Colomer, Jean-François; Robert, Sporken [Research Center in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), 61 Rue de Bruxelles, 5000 Namur (Belgium); Campos-Delgado, Jessica; Raskin, Jean-Pierre [Electrical Engineering (ELEN), Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Université catholique de Louvain UCL, 3 place du Levant, Louvain-la-Neuve (Belgium); Hackens, Benoît; Santos, Cristiane N. [Nanoscopic physics (NAPS), Institute of Condensed Matter and Nanosciences (IMCN), Université catholique de Louvain UCL, 2 chemin du Cyclotron, Louvain-la-Neuve (Belgium)

2014-06-14T23:59:59.000Z

193

Formation and ferromagnetic properties of FeSi thin films  

SciTech Connect (OSTI)

In this work, the growth and ferromagnetic properties of {epsilon}-FeSi thin film on Si(100) substrate prepared by molecular beam epitaxy are reported. The inter-diffusion of Fe layer on Si(100) substrate at 600 Degree-Sign C results in polycrystalline {epsilon}-FeSi layer. The determined activation energy was 0.044 eV. The modified magnetism from paramagnetic in bulk to ferromagnetic states in {epsilon}-FeSi thin films was observed. The saturated magnetization and coercive field of {epsilon}-FeSi film are 4.6 emu/cm{sup 3} and 29 Oe at 300 K, respectively.

Shin, Yooleemi; Anh Tuan, Duong; Hwang, Younghun; Viet Cuong, Tran; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of)

2013-05-07T23:59:59.000Z

194

A Disilane with a Hypercoordinate Silicon Atom:? Coordination of an Imine Ligand versus Si?Si Bond Splitting  

Science Journals Connector (OSTI)

A Disilane with a Hypercoordinate Silicon Atom:? Coordination of an Imine Ligand versus Si?Si Bond Splitting ... An imine?amine-substituted disilane (NN)MeSi?SiMe(ONO) [(NN) ? PhN(CH2)2NPh; (ONO) ? o-O-p-MeO?C6H3?C(Ph)N?C6H4-o-O] involving a penta- as well as a tetracoordinate silicon atom was synthesized. ... This ligand combination gives rise to a stable disilane with a hypercoordinate silicon atom by the imine donor action, while a 1,1-dichlorosilane (MeCl2Si)?SiMe(ONO) is not available due to Si?Si bond cleavage with formation of the pentacoordinate monosilane SiClMe(ONO). ...

Jörg Wagler

2006-12-07T23:59:59.000Z

195

Polarized neutron reflectometry from the interface of the heterostructures SiO2(Co)/Si and SiO2(Co)/GaAs  

Science Journals Connector (OSTI)

Polarized neutron reflectometry is used to investigate SiO2(Co) granular films (70 at% of Co nanoparticles in SiO2 matrix) deposited on Si and GaAs substrates. The aim of the study is to compare magnetization depth profiles in two systems: in SiO2(Co)/GaAs heterostructure which shows at room temperature giant injection magnetoresistance (IMR) with the system SiO2(Co)/Si which reveals almost no IMR effect. We found that at room temperature and at the same value of external magnetic field mean magnetization in the SiO2(Co)/GaAs sample is much higher than in the case of SiO2(Co)/Si. We also demonstrate that magnetic scattering length density, and hence, magnetization profile strongly depends on the substrate. We show that SiO2(Co)/Si heterostructure is ferromagnetically ordered within the temperature range between 120 and 460 K what could explain a weak IMR.

Ekaterina A. Dyadkina; Natalia A. Grigoryeva; Alexey A. Vorobiev; Sergey V. Grigoriev; Leonid V. Lutsev; Kirill Zhernenkov; Maximilian Wolff; Dieter Lott; Alexander I. Stognij; Nicolay N. Novitskii; Boris P. Toperverg

2009-01-01T23:59:59.000Z

196

Apparent Double SiO Maser Sources  

Science Journals Connector (OSTI)

......to 3 Jy with four 20-m antennas (Miyoshi 1998, a poster paper at JAS meeting). The double SiO sources found...Research (C) (No. 10640238) of the Ministry of Education, Science, Sports and Culture. One of authors (SD) received......

Shuji Deguchi; Takahiro Fujii; Hideyuki Izumiura; Shigeru Matsumoto; Yoshikazu Nakada; Peter R. Wood; Issei Yamamura

1999-06-01T23:59:59.000Z

197

Polymorphism in Amorphous SiO2  

Science Journals Connector (OSTI)

Brillouin scattering from a-SiO2 up to 17 GPa shows that an irreversible change in the longitudinal sound velocity takes place between 10 and 17 GPa and that this change is stable at atmospheric pressure. Raman spectra of the retrieved sample indicate that it is also amorphous but differ noticeably from that of the original sample.

M. Grimsditch

1984-06-25T23:59:59.000Z

198

Electronic Origin For The Phase Transition From Amorphous LixSi...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

lithiation, silicon transforms to amorphous LixSi (a-LixSi) via electrochemical driven solid state amorphization. With increasing lithium concentration, a-LixSi transforms to...

199

SiN linkage in ultrabright, ultrasmall Si nanoparticles E. Rogozhina  

E-Print Network [OSTI]

, such as semiconductor particles. CdS e nanoparticles have recently been proposed as fluo- rescent markers.9 resistivity, p-type, B-doped Si, laterally anodized in hydrogen peroxide and HF,11,12 while advancing

Braun, Paul

200

SiG Solar GmbH | Open Energy Information  

Open Energy Info (EERE)

SiG Solar GmbH Jump to: navigation, search Name: SiG Solar GmbH Place: Stuhr-Brinkum, Germany Zip: 28816 Sector: Solar Product: Supplier of mounting systems, and trade name in...

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

SiLas GmbH | Open Energy Information  

Open Energy Info (EERE)

SiLas GmbH Jump to: navigation, search Name: SiLas GmbH Place: Germany Product: Laser technology development enterprise specialising in the processing of thin-film silicon coating....

202

Ge-on-Si laser operating at room temperature  

E-Print Network [OSTI]

Monolithic lasers on Si are ideal for high-volume and large-scale electronic–photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide ...

Liu, Jifeng

203

Magnetic Skyrmion Phase in MnSi Thin Films.  

E-Print Network [OSTI]

??Detailed magnetometry and polarized neutron reflectometry studies were conducted on MnSi thin films grown epitaxially on Si(111) substrates. It is demonstrated that with an in-plane… (more)

Wilson, Murray

2013-01-01T23:59:59.000Z

204

Fiber/Matrix Interfacial Thermal Conductance Effect on the Thermal Conductivity of SiC/SiC Composites  

SciTech Connect (OSTI)

SiC/SiC composites used in fusion reactor applications are subjected to high heat fluxes and require knowledge and tailoring of their in-service thermal conductivity. Accurately predicting the thermal conductivity of SiC/SiC composites as a function of temperature will guide the design of these materials for their intended use, which will eventually include the effects of 14-MeV neutron irradiations. This paper applies an Eshelby-Mori-Tanaka approach (EMTA) to compute the thermal conductivity of unirradiated SiC/SiC composites. The homogenization procedure includes three steps. In the first step EMTA computes the homogenized thermal conductivity of the unidirectional (UD) SiC fiber embraced by its coating layer. The second step computes the thermal conductivity of the UD composite formed by the equivalent SiC fibers embedded in a SiC matrix, and finally the thermal conductivity of the as-formed SiC/SiC composite is obtained by averaging the solution for the UD composite over all possible fiber orientations using the second-order fiber orientation tensor. The EMTA predictions for the transverse thermal conductivity of several types of SiC/SiC composites with different fiber types and interfaces are compared to the predicted and experimental results by Youngblood et al.

Nguyen, Ba Nghiep; Henager, Charles H.

2013-04-20T23:59:59.000Z

205

Electronic Origin For The Phase Transition From Amorphous LixSi To Crystalline Li15Si4  

SciTech Connect (OSTI)

Silicon has been widely explored as an anode material for lithium ion battery. Upon lithiation, silicon transforms to amorphous LixSi (a-LixSi) via electrochemical driven solid state amorphization. With increasing lithium concentration, a-LixSi transforms to crystalline Li15Si4 (c-Li15Si4). The mechanism of this crystallization process is not known. In this paper, we report the fundamental characteristics of the phase transition of a-LixSi to c-Li15Si4 using in-situ scanning transmission electron microscopy (STEM), electron energy loss spectroscopy (EELS), and density function theory (DFT) calculation. We find that when the lithium concentration in a-LixSi reaches a critical value of x = 3.75, the a-Li3.75Si spontaneously and congruently transforms to c-Li15Si4 by a process that is solely controlled by the lithium concentration in the a-LixSi, involving neither large scale atomic migration nor phase separation. DFT calculations indicate that c-Li15Si4 formation is favored over other possible crystalline phases due to the similarity in electronic structure with a-Li3.75Si.

Gu, Meng; Wang, Zhiguo; Connell, Justin G.; Perea, Daniel E.; Lauhon, Lincoln J.; Gao, Fei; Wang, Chong M.

2013-06-24T23:59:59.000Z

206

Raman scattering investigation of a Ge/SiO2/Si nanocrystal system under hydrostatic pressure  

Science Journals Connector (OSTI)

We have studied the hydrostatic pressure dependence of Ge nanocrystals embedded in a SiO2 matrix on a Si substrate by Raman scattering at room temperature. During the first cycle of increasing pressure, we observed a step change in the Ge Raman mode from 310.4 to 313.8 cm-1 at ?23 kbar. The linear pressure coefficients ? obtained before and after the step change at ?23 kbar are 0.42 and 0.64 cm-1 kbar-1, respectively. Upon decreasing pressure, the Ge mode follows a single slope of pressure coefficient ?=0.64 cm-1 kbar-1. A finite-element analysis was carried out to investigate the elastic-field distribution in the Ge/SiO2/Si nanocrystal system, where the discontinuity of the specific geometric configuration with different elastic constants causes local areas of stress concentration around the interface. The step change of the Raman shifts with pressure at ?23 kbar was attributed to complete delamination between the SiO2 film and the Si substrate.

Lei Liu; K. L. Teo; Z. X. Shen; J. S. Sun; E. H. Ong; A. V. Kolobov; Y. Maeda

2004-03-23T23:59:59.000Z

207

Reactivity and migration of hydrogen in a-Si:H  

SciTech Connect (OSTI)

Tight-binding molecular dynamics calculations reveal a new mechanism for hydrogen diffusion in hydrogenated amorphous silicon. Hydrogen diffuses through the network by successively bonding with nearby silicon and breaking their Si-Si bonds. The diffusing hydrogen carried with it a newly created dangling bond. These intermediate transporting states are densely populated in the network and have lower energies than H at the center of stretched Si-Si bonds.

Biswas, R.; Li, Q.; Pan, B.C.; Yoon, Y.

1997-07-01T23:59:59.000Z

208

Regional appraisal of hydrocarbon potential of Trans-Pecos Texas: methodology and conclusions  

SciTech Connect (OSTI)

Evaluation of large areas requires a different approach from that used to develop prospects. Regional cross-section networks generally ignore minor correlation problems. The author examined and related all potentially significant parameters, and used reduced scales to subdue nonessentials and to cover a large area. Organization and planning must permit free interchange of ideas and close cooperation among those working on the project. Regional structural and stratigraphic analysis of Trans-Pecos Texas strongly suggests that widespread trap-destruction by faulting and erosion led to hydrocarbon leakage and induction of fresh water into prospective zones, which reduced the likelihood of accumulation and preservation of economic reserves. At least 4 major periods of tectonism, pervasive fresh water, mineralization, basic igneous intrusives and extrusives, high heat-flow regime, increasing percentage of carbon dioxide southwestward from the Delaware basin, and contemporaneous vertical movement suggest that the opportunity for major reserves is minimal. A review of 1000 mi of CDP seismic data from 4 areas disclosed 65 structural leads or traps, of which 45 had significant tests. All these tests were failures; many gave indications of sizable amounts of fresh water. None of the areas have been completely condemned. However, only relatively small reserves can be anticipated for nearshore to continental Jurassic and Cretaceous sections in the Chihuahua Trough, Pennsylvanian and Permian reefs formed on a shelf environment or on the flanks of major uplifts, or in areas such as the Marfa basin.

Dejong, H.W.; Addy, S.K.; Whitney, G.W.; Worthington, R.E.

1985-02-01T23:59:59.000Z

209

Foulger, G.R., Microearthquake Analysis Techniques For Geothermal Applications, EOS Trans. AGU, Fall Meet. Suppl., Abstract S32B-02 (invited), 2009.  

E-Print Network [OSTI]

urgency to develop renewable energy resources, including geothermal power, and in particular EnhancedFoulger, G.R., Microearthquake Analysis Techniques For Geothermal Applications, EOS Trans. AGU And Induced Microearthquakes Microearthquake Analysis Techniques For Geothermal Applications The increased

Foulger, G. R.

210

Trans-fatty acids, dangerous bonds for health? A background review paper of their use, consumption, health implications and regulation in France  

Science Journals Connector (OSTI)

Trans-fatty acids (TFAs) can be produced either from bio-hydrogenation in the rumen of ruminants or by industrial hydrogenation. While most of TFAs’ effects from ruminants are poorly established, there is incr...

Farid Menaa; Abder Menaa; Bouzid Menaa; Jacques Tréton

2013-06-01T23:59:59.000Z

211

TransCom model simulations of CH? and related species: linking transport, surface flux and chemical loss with CH? variability in the troposphere and lower stratosphere  

E-Print Network [OSTI]

A chemistry-transport model (CTM) intercomparison experiment (TransCom-CH?) has been designed to investigate the roles of surface emissions, transport and chemical loss in simulating the global methane distribution. Model ...

Patra, P. K.

212

Estimate the fraction of the total transported energy (in the form of gasoline) in the Trans-Alaska Pipeline that is consumed in pumping.  

E-Print Network [OSTI]

Estimate the fraction of the total transported energy (in the form of gasoline) in the Trans m). So we can toss this out. Now estimate the energy content of gasoline: Many of you tried figuring

Nimmo, Francis

213

Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*  

E-Print Network [OSTI]

Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga* , Mike Morsea , Mario J. Panicciaa , Moshe, Charlottesville, VA 22904, USA Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes. Research on the Ge/Si photodiodes, one of the fundamental components needed for building integrated silicon

Bowers, John

214

Dislocation glide and blocking kinetics in compositionally graded SiGeSi C. W. Leitz,a)  

E-Print Network [OSTI]

and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 M quality GaAs/Ge/Si1 xGex /Si solar cells.5 The multiple low-mismatch interfaces in the compo- sitionally

215

Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded SiGe/Si*  

E-Print Network [OSTI]

and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 such as lasers,12,13 waveguides,14 and high- efficiency solar cells.15,16 In this system, scalable x Si1-xGex /Si

216

Immediate-early gene region of human cytomegalovirus trans-activates the promoter of human immunodeficiency virus  

SciTech Connect (OSTI)

Almost all homosexual patients with acquired immunodeficiency syndrome are also actively infected with human cytomegalovirus (HCMV). The authors have hypothesized that an interaction between HCMV and human immunodeficiency virus (HIV), the agent that causes acquired immunodeficiency syndrome, may exist at a molecular level and contribute to the manifestations of HIV infection. In this report, they demonstrate that the immediate-early gene region of HCMV, in particular immediate-early region 2, trans-activates the expression of the bacterial gene chloramphenicol acetyltransferase that is fused to the HIV long terminal repeat and carried by plasmid pHIV-CAT. The HCMV immediate-early trans-activator increases the level of mRNA from the plamid pHIV-CAT. The sequences of HIV that are responsive to trans-activation by the HDMV immediate-early region are distinct from HIV sequences that are required for response to the HIV tat. The stimulation of HIV gene expression by HDMV gene functions could enhance the consequences of HIV infection in persons with previous or concurrent HCMV infection.

Davis, M.G.; Kenney, S.C.; Kamine, J.; Pagano, J.S.; Huang, E.S.

1987-12-01T23:59:59.000Z

217

IEICE TRANS. COMMUN., VOL.E91B, NO.5 MAY 2008 INVITED PAPER Special Section on Communication Quality  

E-Print Network [OSTI]

, such as the level of distortion of voice signals, the effects of other factors like loudness and sidetone, can also) E-mail: r95921037@ntu.edu.tw b) E-mail: ktchen@iis.sinica.edu.tw c) E-mail: phuang@cc.ee.ntu.edu.tw d) E-mail: lei@cc.ee.ntu.edu.tw This work was supported in part by Taiwan Informa- tion Security

Huang, Polly

218

Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures  

SciTech Connect (OSTI)

Transmission electron microscopy and the cathodoluminescence method are used to study the transition region in 3C-SiC/6H-SiC heterostructures. It is shown that this region is, as a rule, constituted by alternating 3C-SiC and 6H-SiC layers with the possible inclusion of other silicon carbide polytypes. An assumption is made that this structure of the transition region can be explained in terms of the model of spinodal decomposition.

Lebedev, A. A.; Zamorianskaya, M. V.; Davydov, S. Yu.; Kirilenko, D. A.; Lebedev, S. P., E-mail: shura.lebe@mail.ioffe.ru; Sorokin, L. M.; Shustov, D. B.; Scheglov, M. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-11-15T23:59:59.000Z

219

FIRING STABILITY OF SiNy / SiNx SURFACE PASSIVATION STACKS FOR CRYSTALLINE SILICON SOLAR CELLS  

E-Print Network [OSTI]

to passivate the phosphorous-diffused emitter at the front. The passivation of these SiNx films deposited

220

Method for enhancing growth of SiO.sub.2 in Si by the implantation of germanium  

DOE Patents [OSTI]

A method for enhancing the conversion of Si to SiO.sub.2 in a directional fashion wherein steam or wet oxidation of Si is enhanced by the prior implantation of Ge into the Si. The unique advantages of the Ge impurity include the directional enhancement of oxidation and the reduction in thermal budget, while at the same time, Ge is an electrically inactive impurity.

Holland, Orin W. (Oak Ridge, TN); Fathy, Dariush (Knoxville, TN); White, Clark W. (Oak Ridge, TN)

1990-04-24T23:59:59.000Z

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures  

SciTech Connect (OSTI)

The results of a study of the spectral and temporal characteristics of the photoluminescence (PL) from multilayer structures with self-assembled Ge(Si) islands grown on silicon and 'silicon-on-insulator' substrates in relation to temperature and the excitation-light wavelength are presented. A substantial increase in island-related PL intensity is observed for structures with Ge(Si) islands grown on silicon substrates upon an increase in temperature from 4 to 70 K. This increase is due to the diffusion of nonequilibrium carriers from the silicon substrate into the active layer with the islands. In this case, a slow component with a characteristic time of {approx}100 ns appears in the PL rise kinetics. At the same time, no slow component in the PL rise kinetics and no rise in the PL intensity with increasing temperature are observed for structures grown on 'silicon-on-insulator' substrates, in which the active layer with the islands is insulated from the silicon substrate. It is found that absorption of the excitation light in the islands and SiGe wetting layers mainly contributes to the excitation of the PL signal from the islands under sub-bandgap optical pump conditions.

Yablonskiy, A. N., E-mail: yablonsk@ipm.sci-nnov.ru; Baidakova, N. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Novikov, A. V. [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation)] [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation); Lobanov, D. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2013-11-15T23:59:59.000Z

222

Evaluate Si Layers: Cooperative Research and Development Final Report, CRADA Number CRD-07-255  

SciTech Connect (OSTI)

Evaluate Si layers based on heteroepitaxial Si growth on RABITS textured metal substrates coated with textured buffer layers.

Teplin, C.

2013-04-01T23:59:59.000Z

223

Effects of interface bonding and defects on boron diffusion at Si/SiO{sub 2} interface  

SciTech Connect (OSTI)

We perform first-principles density functional calculations to find the migration pathway and barrier for B diffusion at the Si/SiO{sub 2} interface. For various interface models, in which crystalline ?-quartz or amorphous silica (a-SiO{sub 2}) is placed on Si, we examine stable and metastable configurations of B-related defects which play a role in B diffusion. While a substitutional B alone is immobile in Si, it tends to diffuse to the interface via an interstitialcy mechanism in the presence of a self-interstitial and then changes into an interstitial B in oxide via a kick-out mechanism, leaving the self-interstitial at the interface. At the defect-free interface, where bridging O atoms are inserted to remove interface dangling bonds, an interstitial B prefers to intervene between the interface Si and bridging O atoms and subsequently diffuses through the hollow space or along the network of the Si-O-Si bonds in oxide. The overall migration barriers are calculated to be 2.02–2.12?eV at the Si/?-quartz interface, while they lie in the range of 2.04?±?0.44?eV at the Si/a-SiO{sub 2} interface, similar to that in ?-quartz. The migration pathway and barrier are not significantly affected by interface defects such as suboxide bond and O protrusion, while dangling bonds in the suboxide region can increase the migration barrier by about 1.5?eV. The result that the interface generally does not hinder the B diffusion from Si to SiO{sub 2} assists in understanding the underlying mechanism for B segregation which commonly occurs at the Si/SiO{sub 2} interface.

Kim, Geun-Myeong; Oh, Young Jun; Chang, K. J., E-mail: kchang@kaist.ac.kr [Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)

2013-12-14T23:59:59.000Z

224

SiXtron Advanced Materials | Open Energy Information  

Open Energy Info (EERE)

SiXtron Advanced Materials SiXtron Advanced Materials Jump to: navigation, search Name SiXtron Advanced Materials Place Quebec, Canada Website http://www.sixtronadvancedmate References SiXtron Advanced Materials[1] Information About Partnership with NREL Partnership with NREL Yes Partnership Type CRADA Partnering Center within NREL National Center for Photovoltaics Partnership Year 2008 Link to project description http://www.nrel.gov/technologytransfer/news/2008/631.html LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! SiXtron Advanced Materials is a company located in Quebec, Canada. References ↑ "SiXtron Advanced Materials" Retrieved from "http://en.openei.org/w/index.php?title=SiXtron_Advanced_Materials&oldid=379175" Categories:

225

Conservation of bond lengths in strained Ge-Si layers  

Science Journals Connector (OSTI)

The combined techniques of x-ray-absorption fine structure and x-ray diffraction have been used to study the strain and bond distortions in epitaxial Ge-Si on Si(001). In a 31% Ge, 340-Å pseudomorphic Ge-Si film, the Ge-Ge and Ge-Si first-neighbor bond lengths have been found to be 2.44±0.02 and 2.38±0.02 Å, respectively. The lattice parameter perpendicular to the Ge-Si/Si(001) interface has been found to be a?=5.552±0.002 Å, in agreement with the predictions of macroscopic elastic theory. These results show that the bond-length strain in the epitaxial layer appears in the second and higher coordination shells, rather than in the nearest-neighbor bond lengths, which remain the same as in unstrained Ge-Si. A microscopic model is presented that accounts for these findings.

J. C. Woicik; C. E. Bouldin; M. I. Bell; J. O. Cross; D. J. Tweet; B. D. Swanson; T. M. Zhang; L. B. Sorensen; C. A. King; J. L. Hoyt; P. Pianetta; J. F. Gibbons

1991-01-15T23:59:59.000Z

226

Helium irradiation effects in polycrystalline Si, silica, and single crystal Si  

SciTech Connect (OSTI)

Transmission electron microscopy (TEM) has been used to investigate the effects of room temperature 6 keV helium ion irradiation of a thin ({approx_equal}55 nm thick) tri-layer consisting of polycrystalline Si, silica, and single-crystal Si. The ion irradiation was carried out in situ within the TEM under conditions where approximately 24% of the incident ions came to rest in the specimen. This paper reports on the comparative development of irradiation-induced defects (primarily helium bubbles) in the polycrystalline Si and single-crystal Si under ion irradiation and provides direct measurement of a radiation-induced increase in the width of the polycrystalline layer and shrinkage of the silica layer. Analysis using TEM and electron energy-loss spectroscopy has led to the hypothesis that these result from helium-bubble-induced swelling of the silicon and radiation-induced viscoelastic flow processes in the silica under the influence of stresses applied by the swollen Si layers. The silicon and silica layers are sputtered as a result of the helium ion irradiation; however, this is estimated to be a relatively minor effect with swelling and stress-related viscoelastic flow being the dominant mechanisms of dimensional change.

Abrams, K. J.; Greaves, G.; Berg, J. A. van den [Materials and Physics Research Centre, University of Salford, Salford (United Kingdom); Hinks, J. A.; Donnelly, S. E. [School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom); Pawley, C. J. [Materials and Physics Research Centre, University of Salford, Salford (United Kingdom); School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom); Eyidi, D. [Institut Pprime, Universite de Poitiers, Poitiers (France); Ward, M. B. [Institute for Materials Research, University of Leeds, Leeds (United Kingdom)

2012-04-15T23:59:59.000Z

227

Model Year 2010 Green Vehicle Guide Model Displ Cyl Trans Drive  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Green Vehicle Guide Green Vehicle Guide Model Displ Cyl Trans Drive Fuel Sales Area Stnd Stnd Description Underhood ID Veh Class Air Pollution Score City MPG Hwy MPG Cmb MPG Greenhouse Gas Score SmartWay ACURA MDX 3.7 6 SemiAuto-6 4WD Gasoline CA U2 California LEV-II ULEV AHNXT03.7W19 SUV 7 16 21 18 4 no ACURA MDX 3.7 6 SemiAuto-6 4WD Gasoline FA B5 Federal Tier 2 Bin 5 AHNXT03.7W19 SUV 6 16 21 18 4 no ACURA RDX 2.3 4 SemiAuto-5 2WD Gasoline CA U2 California LEV-II ULEV AHNXT02.3Y19 SUV 7 19 24 21 5 no ACURA RDX 2.3 4 SemiAuto-5 4WD Gasoline CA U2 California LEV-II ULEV AHNXT02.3Y19 SUV 7 17 22 19 4 no ACURA RDX 2.3 4 SemiAuto-5 2WD Gasoline FA B5 Federal Tier 2 Bin 5 AHNXT02.3Y19 SUV 6 19 24 21 5 no ACURA RDX 2.3 4 SemiAuto-5 4WD Gasoline FA B5 Federal Tier 2 Bin 5 AHNXT02.3Y19 SUV 6 17 22 19 4 no ACURA RL 3.7 6 SemiAuto-5 4WD Gasoline CA U2 California LEV-II ULEV AHNXV03.7PB9 midsize car

228

Model Year 2011 Green Vehicle Guide Model Displ Cyl Trans Drive  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Green Vehicle Guide Green Vehicle Guide Model Displ Cyl Trans Drive Fuel Sales Area Stnd Stnd Description Underhood ID Veh Class Air Pollution Score City MPG Hwy MPG Cmb MPG Greenhouse Gas Score SmartWay ACURA MDX 3.5 6 SemiAuto-6 4WD Gasoline CA U2 California LEV-II ULEV BHNXT03.7M19 SUV 6 16 21 18 3 no ACURA MDX 3.5 6 SemiAuto-6 4WD Gasoline FA B5 Federal Tier 2 Bin 5 BHNXT03.7M19 SUV 5 16 21 18 3 no ACURA RDX 2.3 4 SemiAuto-5 2WD Gasoline CA U2 California LEV-II ULEV BHNXT02.3X19 SUV 6 19 24 21 4 no ACURA RDX 2.3 4 SemiAuto-5 4WD Gasoline CA U2 California LEV-II ULEV BHNXT02.3X19 SUV 6 17 22 19 3 no ACURA RDX 2.3 4 SemiAuto-5 2WD Gasoline FA B5 Federal Tier 2 Bin 5 BHNXT02.3X19 SUV 5 19 24 21 4 no ACURA RDX 2.3 4 SemiAuto-5 4WD Gasoline FA B5 Federal Tier 2 Bin 5 BHNXT02.3X19 SUV 5 17 22 19 3 no ACURA RL 3.7 6 SemiAuto-6 4WD Gasoline CA U2 California LEV-II ULEV BHNXV03.7PB9 midsize car

229

Model Year 2012 Green Vehicle Guide Model Displ Cyl Trans Drive  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Green Vehicle Guide Green Vehicle Guide Model Displ Cyl Trans Drive Fuel Sales Area Stnd Stnd Description Underhood ID Veh Class Air Pollution Score City MPG Hwy MPG Cmb MPG Greenhouse Gas Score SmartWay ACURA MDX 3.7 6 SemiAuto-6 4WD Gasoline FA B5 Federal Tier 2 Bin 5 CHNXT03.7R19 SUV 5 16 21 18 3 no ACURA MDX 3.7 6 SemiAuto-6 4WD Gasoline CA U2 California LEV-II ULEV CHNXT03.7R19 SUV 6 16 21 18 3 no ACURA RDX 2.3 4 SemiAuto-5 4WD Gasoline FA B5 Federal Tier 2 Bin 5 CHNXT02.3Y19 SUV 5 17 22 19 3 no ACURA RDX 2.3 4 SemiAuto-5 4WD Gasoline CA U2 California LEV-II ULEV CHNXT02.3Y19 SUV 6 17 22 19 3 no ACURA RDX 2.3 4 SemiAuto-5 2WD Gasoline FA B5 Federal Tier 2 Bin 5 CHNXT02.3Y19 SUV 5 19 24 21 4 no ACURA RDX 2.3 4 SemiAuto-5 2WD Gasoline CA U2 California LEV-II ULEV CHNXT02.3Y19 SUV 6 19 24 21 4 no ACURA TL 3.5 6 SemiAuto-6 2WD Gasoline FA B5 Federal Tier 2 Bin 5 CHNXV03.5EB3 midsize car 5

230

Geothermal energy resources in Trans-Pecos Texas - characteristics and potential for development  

SciTech Connect (OSTI)

Convective geothermal systems in Trans-pecos Texas, and Chihuahua and Coahuila, Mexico, are potential energy resources. The geothermal systems, which lie along a narrow belt near the Rio Grand River, are characterized by hot springs and shallow hot wells located along normal faults. The hot water is meteoric water that has circulated to depths of 2-3 km (1-2 mi), been heated, and risen to the surface through fractures along fault zones. The heat source is the Earth's normal thermal gradient, which as high as 40/sup 0/C/km (202/sup 0/F/100 ft); no young magma bodies are involved. Maximum measured temperatures are 90/sup 0/C (194/sup 0/F) at a hot spring in Chihuahua, about 80/sup 0/C (176/sup 0/F) in 2 well in the Sierra Vieja, and about 75/sup 0/C (167/sup 0/F) in several wells east of El Paso. Many springs have temperature in the range 35-50/sup 0/C (95-122/sup 0/F). Maximum subsurface temperatures estimated from chemical geothermometers are 100-160/sup 0/C (212-320/sup 0/F); most are considerably lower. Chemical constraints on use should be negligible except for the El Paso-area waters, which have moderately high dissolved solids (10,000 mg/L). Hydrologic data to evaluate possible production rates are generally sparse. None of the waters are hot enough to generate electricity by currently available technology. The highest temperature waters could be used for industrial or space heating, but, except for the area near El Paso, they are too far from population centers.

Henry, C.D.

1984-04-01T23:59:59.000Z

231

Geology of the Trans-Missouri River Tunnel project, Kansas City, Missouri  

SciTech Connect (OSTI)

The geology of the Missouri River Valley at Kansas City is interpreted from the borehole and construction site data along the route of the Trans-Missouri River Tunnel, a 4.4 km long water tunnel constructed at a depth of 90--97.5 m below the floodplain of the Missouri River. The data from the site investigation is used to construct a detailed stratigraphic cross-section of the subsurface units to a depth of 120 m and extending in a north-south direction the length of the tunnel. The rock section is divided into 2 broad categories, (a) alluvium and (b) bedrock. The alluvium (Pleistocene-Holocene) fills the Missouri River Valley to a depth of 38 m along the tunnel route. An exception is a deep narrow channel near the center of the valley, the alluvium is 55 m thick and the lower several meters of the channel is filled with glacial till( ). The alluvium rests unconformably on Pennsylvanian bedrock consisting of thin strata arranged in cyclical sequences or cyclothems and belonging to the following groups in ascending order: Upper Cherokee, Marmaton and Lower Pleasanton. The test drill core data made it possible to conduct a detailed analysis of the subsurface stratigraphy. Of major importance is the stratigraphic position of a thick channel-fill deposit in the Labette Formation, Marmaton Group, a producing horizon in several small oil and gas fields in western Missouri and eastern Kansas. The 327.6 cm dia. bore for the essentially horizontal tunnel is constructed in predominately silty and sandy gray shale located stratigraphically near the Cherokee-Marmaton contact and in younger channel-fill deposits.

Gentile, R.J. (Univ. of Missouri, Kansas City, MO (United States). Dept. of Geosciences)

1993-03-01T23:59:59.000Z

232

Site selectivity in the reaction of Si(111)-(7 times 7) with Si sub 2 H sub 6  

SciTech Connect (OSTI)

We find that the reaction of disilane with the Si(111)-(7{times}7) surface shows strong site selectivity. The reaction involves the fission of the Si-Si bond of Si{sub 2}H{sub 6} even at low temperatures and occurs preferentially at rest-atom sites of the 7{times}7 surface. The reaction of the products of the thermal dissociation of the surface-bound SiH{sub x} groups with surface dangling-bond sites is also site selective. We propose mechanisms to explain the above observations.

Avouris, Ph.; Bozso, F. (T. J. Watson Research Center, Yorktown Heights, NY (USA))

1990-03-22T23:59:59.000Z

233

Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces Luxmi, N. Srivastava, Guowei He, and R. M. Feenstra  

E-Print Network [OSTI]

1 Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces Luxmi, N. Srivastava of graphene formed on the ( 1000 ) surface (the C-face) and the (0001) surface (the Si-face) of Si) and low-energy electron microscopy (LEEM). The graphene forms due to preferential sublimation of Si from

Feenstra, Randall

234

Atomic reconstruction and electron states at interfaces between 3C-SiC(111) and Si(110)  

Science Journals Connector (OSTI)

We report first-principles calculations that reveal atomic and electronic structures of interfaces consisting of Si(110) face and 3C-SiC (111) face in which the lattices match apparently but the atomic densities in both sides are different. We find two distinct interface structures in the total-energy difference of 4–5 meV per Å2 for both the Si-Si interface and the Si-C interface: The interface of sparse Si(110) and dense SiC(111) exhibits bistability. We find that the stable and metastable structures are associated with vacant channels along a particular direction which are stabilized by the existence of over-coordinated atoms (floating bonds). We reveal that the coexistence of the floating bonds and the dangling bonds (under-coordinated atoms) and then the electron transfer from the dangling- to the floating bonds are the microscopic mechanism of the stabilization of the interface. We also find that atomic scale undulation mainly confined in the Si region also exists to stabilize the interface. The calculated interface energies show that the Si-Si interface is energetically favorable compared with the Si-C interface. Calculated energy bands exhibit semiconducting characteristics for all the stable and metastable interfaces.

Eric K. K. Abavare; Jun-Ichi Iwata; Atsushi Oshiyama

2013-06-27T23:59:59.000Z

235

Lattice constants and optical response of pseudomorph Si-rich SiGe:B  

SciTech Connect (OSTI)

Pseudomorph epitaxial films of Si{sub 1?x}Ge{sub x}:B were grown on undoped (100) Si for x???0.026 and the B concentration of 1.3?×?10{sup 20}?cm{sup ?3}.The in-plane and out-of-plane lattice constants were determined using the X-ray techniques for 004 symmetric and 224 asymmetric diffraction. The influence of B and Ge co-doping has been detected in reflectance and ellipsometric spectra from infrared to ultraviolet. Free-hole plasma and Fano-type resonances of Si phonons and localized {sup 11}B and {sup 10}B vibrations have been observed. The spectral shift of E{sub 1} electronic transitions has been quantified. We found a simple way to test the variations of Ge content using relative reflectance spectra.

Caha, O. [CEITEC–Central European Institute of Technology, Masaryk University, Kamenice 753/5, 62500 Brno (Czech Republic)] [CEITEC–Central European Institute of Technology, Masaryk University, Kamenice 753/5, 62500 Brno (Czech Republic); Kostelník, P.; Šik, J. [ON Semiconductor CR, 1. Máje 2230, Rožnov p. Radhošt'em 75661 (Czech Republic)] [ON Semiconductor CR, 1. Máje 2230, Rožnov p. Radhošt'em 75661 (Czech Republic); Kim, Y. D. [Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701 (Korea, Republic of)] [Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Humlí?ek, J., E-mail: humlicek@physics.muni.cz [CEITEC–Central European Institute of Technology, Masaryk University, Kamenice 753/5, 62500 Brno (Czech Republic); Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

2013-11-11T23:59:59.000Z

236

Effect of Al-Si-Al and Al-Si-Si-Al Pairs in the ZSM-5 Zeolite Framework on the 27 NMR Spectra. A Combined High-Resolution 27  

E-Print Network [OSTI]

Effect of Al-Si-Al and Al-Si-Si-Al Pairs in the ZSM-5 Zeolite Framework on the 27 Al NMR Spectra. A Combined High-Resolution 27 Al NMR and DFT/MM Study Jiri´ Dedecek, Stepan Sklenak,*, Chengbin Li, Blanka of the presence of Al-O-Si-O-Al and Al-O-Si-O-Si-O-Al sequences in the ZSM-5 zeolite framework on the local

Sklenak, Stepan

237

Thermal Conductivity of SiC/Si Composites – Porting PNNL EMTA Code for Fusion Analyses  

SciTech Connect (OSTI)

An existing modeling method, the EMTA (Eshelby-Mori-Tanaka approach) modeling approach [1], is applied to the study of SiC/SiC 2D woven composites for fusion reactor applications for the first time, to the best of our knowledge, with excellent results. We compare EMTA model results to existing thermal conductivity data for these materials and suggest that in the future this approach can be beneficial by providing us with tools to further optimize these composite materials for fusion energy applications since the EMTA method and code can address both thermal and mechanical properties with the same framework.

Henager, Charles H.; Nguyen, Ba Nghiep

2013-04-19T23:59:59.000Z

238

EFFECT OF SiO2 TICKNESSES IN THERMAL-SiO2/PECVD-SiN STACKS ON SURFACE PASSIVATION OF n-TYPE Cz SILICON SUBSTRATES  

E-Print Network [OSTI]

. A prominent example of SiO2 surface passivation is given by the world-record solar cell efficiency of the passivated-emitter and rear locally- diffused (PERL) c-Si solar cell [1]. The surface passivation of the as the standard RCA procedure prior to oxidation in a cleaned quartz furnace tube at high temperat

239

New interface structure for A-type CoSi,/Si(lll) M. F. Chisholm and S. J. Pennycook  

E-Print Network [OSTI]

of the silicide, leading to sevenfold coordinated metal atoms at the interface [see Fig. l(a'l]. The disilicide proposed."' They have been classified according to two criteria: the coordina- tion of the metal atoms join along flat bulk terminated { 111) surfaces, the silicon substrate binds either to the metal atoms

Pennycook, Steve

240

Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition  

SciTech Connect (OSTI)

We propose to grow graphene on SiC by a direct carbon feeding through propane flow in a chemical vapor deposition reactor. X-ray photoemission and low energy electron diffraction show that propane allows to grow few-layer graphene (FLG) on 6H-SiC(0001). Surprisingly, FLG grown on (0001) face presents a rotational disorder similar to that observed for FLG obtained by annealing on (000-1) face. Thanks to a reduced growth temperature with respect to the classical SiC annealing method, we have also grown FLG/3C-SiC/Si(111) in a single growth sequence. This opens the way for large-scale production of graphene-based devices on silicon substrate.

Michon, A.; Vezian, S.; Portail, M. [CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne (France); Ouerghi, A. [CNRS-LPN, Route de Nozay, 91460 Marcoussis (France); Zielinski, M.; Chassagne, T. [NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)

2010-10-25T23:59:59.000Z

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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241

Giant monopole resonance strength in Si-28  

E-Print Network [OSTI]

and reported 66% of the E0 570556-2813/98/57~3!/1134~11!/$15.00 e strength in 28Si Clark, and Y.-W. Lui , College Station, Texas 77843 r 1997! inelastic scattering of 240 MeV a particles at small d from Ex512 MeV to 35 MeV and E0 strength y weighted sum... the data points. The energies of known states, their multipolarities and the br used in the fits are shown for each angular distri- bution. The 01 component shown in ~d! has not been previously reported. 1136 57D. H. YOUNGBLOOD, H. L. CLARK, AND Y.-W...

Youngblood, David H.; Clark, HL; Lui, YW.

1998-01-01T23:59:59.000Z

242

Isoscalar giant resonance strength in Si-28  

E-Print Network [OSTI]

PHYSICAL REVIEW C 76, 027304 (2007) Isoscalar giant resonance strength in 28Si D. H. Youngblood, Y.-W. Lui, and H. L. Clark Cyclotron Institute, Texas A&M University, College Station, Texas 77843, USA (Received 7 May 2007; published 28 August... that somewhat mimic an E1 angular distribution. This work was supported in part by the U.S. Department of Energy under grant No. DE-FG03-93ER40773 and by The Robert A. Welch Foundation under grant No. A-0558. [1] D. H. Youngblood, Y.-W. Lui, and H. L. Clark...

Youngblood, David H.; Lui, Y. -W; Clark, H. L.

2007-01-01T23:59:59.000Z

243

Phonon-assisted transient electroluminescence in Si  

SciTech Connect (OSTI)

The phonon-replica infrared emission is observed at room temperature from indirect band gap Si light-emitting diode under forward bias. With increasing injection current density, the broadened electroluminescence spectrum and band gap reduction are observed due to joule heating. The spectral-resolved temporal response of electroluminescence reveals the competitiveness between single (TO) and dual (TO?+?TA) phonon-assisted indirect band gap transitions. As compared to infrared emission with TO phonon-replica, the retarder of radiative recombination at long wavelength region (?1.2??m) indicates lower transition probability of dual phonon-replica before thermal equivalent.

Cheng, Tzu-Huan, E-mail: f94943139@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan (China); Chu-Su, Yu [Institute of Biomedical Engineering, National Taiwan University, Taipei, Taiwan and Department of Laboratory Medicine, National Taiwan University Hospital, Taipei, Taiwan (China); Liu, Chien-Sheng [Institute of Biomedical Engineering, National Taiwan University, Taipei, Taiwan (China); Lin, Chii-Wann [Institute of Biomedical Engineering and Institute of Electrical Engineering, National Taiwan University, Taipei, Taiwan (China)

2014-06-30T23:59:59.000Z

244

Du vieil Homme au nouveau : trans-humanisme ? Défis pour penser l’Homme de demain  

Science Journals Connector (OSTI)

Résumé L’idée d’un Homme nouveau, d’un Homme qui ne souffrirait pas ou plus, d’un Homme qui vivrait toujours plus longtemps, voire d’un Homme enfin créateur de sa propre existence n’est pas nouvelle. Les recherches d’un Graal, d’une liqueur de jouvence, d’une potion miraculeuse hantent l’humain depuis la nuit des temps et ont fait l’objet de tant de mythes. Le temps des mythes semble résolu pour certains. Les promoteurs d’une révolution de l’humain se réunissent dans des associations très actives qui disposent d’énormes fonds financiers, afin de promouvoir leurs recherches en vue d’améliorer l’homme quitte à ce qu’il devienne autre, notion contenue dans le trans-humanisme. L’amélioration des compétences intellectuelles et des capacités physiques et biologiques, notion appelée méliorisme ou en anglais enhancement, est au cœur de leurs réflexions, de leurs recherches. Ces modifications des conditions de vie de l’homme sont possibles, grâce aux fantastiques progrès de la science et des biotechnologies. La mise en commun de toutes les sciences de l’informatique, de la biotechnologie, des nanotechnologies et sur la cognition appelée « convergence NBIC » donne l’illusion de pouvoir dépasser la finitude humaine et d’entrer doucement dans une ère d’amortalité. Notre propos est d’aider à comprendre ces perspectives menant à des modifications de l’humain et de souligner certaines questions éthiques qu’elles suscitent. Summary What's about the “new man”, a man who will not be suffering and enduring pain, a man who will live forever, and a man who will be his own creator? Since the beginning of the world, man searches the grail, the fountain of youth, which constitutes the base of myths. Since 1980s, searchers in many fields as nanotechnology, biotechnology, sciences in numerical knowledge and science in cognition, called as NBIC convergence, have worked together to go always further. Convergence of these searchers makes possible the creation of a new man. Enhancement of the man asks humanity many ethical questions. The purpose of this article is to present ethical considerations induced by these different new prospects.

A. de Broca

2012-01-01T23:59:59.000Z

245

EIS-0450: TransWest Express 600 kV Direct Current Transmission Project in Wyoming, Colorado, Utah, and Nevada  

Broader source: Energy.gov [DOE]

This EIS, being prepared jointly by DOE’s Western Area Power Administration and the Department of the Interior’s Bureau of Land Management (Wyoming State Office), evaluates the environmental impacts of granting a right-of-way for the TransWest Express 600-kilovolt Direct Current Transmission Project and amending a land use plan. The project consists of an overhead transmission line that would extend approximately 725 miles from south-central Wyoming, through Colorado and Utah. Western proposes to be a joint owner of the project.

246

Microstructures of Si surface layers implanted with Cu  

SciTech Connect (OSTI)

Microstructures of Si ion-implanted with Cu have been characterized by TEM after annealing. For 1.2 at.%, the Cu is trapped at planar defects, but for 10 at.%, {eta}-Cu{sub 3}Si forms and Cu diffuses at its equilibrium solubility. These observations allow proper evaluation of the binding energies of Cu to previously formed internal cavities (2.2 eV) and {eta}-Cu{sub 3}Si (1.7 eV). The 10 at.% Cu layer promotes oxidation of Si catalyzed by {eta}-Cu{sub 3}Si. The microstructures also indicate that Si implanted with {approximately}2 at.% Cu reforms epitaxially with embedded defects after 8 hr at 700C, but for {approximately}10 at.% Cu, epitaxy is not recovered after 6 hours at 600C.

Follstaedt, D.M.; Myers, S.M.

1993-12-31T23:59:59.000Z

247

Structure of a Si(100)2×2-Ga surface  

Science Journals Connector (OSTI)

The 2×2 structure formed on a Ga-adsorbed Si(100) surface is determined using tensor low-energy electron diffraction. I-V curves of the parallel dimer model are in excellent agreement with those of the experiment, indicating that the actual surface has parallel dimer structure. Specific displacements of the topmost two surface layers (the protrusion of the Ga dimer toward the vacuum, the increase of the bond length of the Ga dimer, the stretching of the Si dimer, and the movement of the Si dimer toward the Ga dimer) with the elongation of the Si dimer back bond are observed in the optimized geometry. The Ga-Si bond angle measured from the Si(100) surface plane is recovered with these displacements from that of the ideal geometry where each bond length is assumed to be the sum of Pauling covalent radii. Subsurface layers are also deformed to keep the bond lengths near their bulk values.

H. Sakama; K. Murakami; K. Nishikata; A. Kawazu

1994-11-15T23:59:59.000Z

248

THEORETICAL AND EXPERIMENTAL EVALUATION OF WASTE TRANS -PORT IN SELECTED ROCKS: 1977 ANNUAL REPORT OF LBL CONTRACT NO. 45901AK. Waste Isolation Safety Assessment Program-Collection and Generation of Transport Data.  

E-Print Network [OSTI]

rate control 11nq trans­ port mechanisms (e.g. ionic or .Department of Commerce 5285 Port Royal Road Springfield, VA

Apps, J.A.

2011-01-01T23:59:59.000Z

249

Application to export electric energy OE Docket No. EA-216-C TransAlta Energy Marketing (U.S) Inc: Federal Register Notice Volume 76, No. 14- Jan. 21, 2011  

Broader source: Energy.gov [DOE]

Application from TransAlta Energy Marketing (U.S) Inc to export electric energy to Canada.  Federal Register Notice Vol 76 No 14

250

P-type SiGe/Si Superlattice Cooler Xiaofeng Fan, Gehong Zeng, Edward Croke1  

E-Print Network [OSTI]

the temperature of the device below ambient. For a material to be a good thermoelectric cooler, it must have]. SiGe is a good thermoelectric material especially for high temperature applications [11 element thermoelectric devices, and it will enable us to achieve large cooling capacities with relatively

251

Progress in blanket designs using SiCf/SiC composites L. Giancarli a,  

E-Print Network [OSTI]

- 2 #12;with the potential for high energy conversion efficiency (!/50%). Starting from the different the simultaneous functions of coolant, tritium breeder, neutron multiplier and, finally, tritium carrier. The DREAMCf/SiC improve energy handling capabilities, allowing the use of high temperature coolant 1 Corresponding author

Raffray, A. René

252

Structural and magnetic properties of irradiated SiC  

SciTech Connect (OSTI)

We present a comprehensive structural characterization of ferromagnetic SiC single crystals induced by Ne ion irradiation. The ferromagnetism has been confirmed by electron spin resonance, and possible transition metal impurities can be excluded to be the origin of the observed ferromagnetism. Using X-ray diffraction and Rutherford backscattering/channeling spectroscopy, we estimate the damage to the crystallinity of SiC, which mutually influences the ferromagnetism in SiC.

Wang, Yutian; Helm, Manfred [Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, 01314 Dresden (Germany); Technische Universität Dresden, 01062 Dresden (Germany); Chen, Xuliang; Yang, Zhaorong [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Li, Lin [Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, 01314 Dresden (Germany); Department of Physics and Electronics, School of Science, Beijing University of Chemical Technology, Beijing 100029 (China); Shalimov, Artem; Prucnal, Slawomir; Munnik, Frans; Skorupa, Wolfgang; Zhou, Shengqiang, E-mail: s.zhou@hzdr.de [Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, 01314 Dresden (Germany); Tong, Wei [High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China)

2014-05-07T23:59:59.000Z

253

SiC Power MOSFET with Improved Gate Dielectric  

SciTech Connect (OSTI)

In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

Sbrockey, Nick M; Tompa, Gary S; Spencer, Michael G; Chandrashekhar, Chandra MVS

2010-08-23T23:59:59.000Z

254

HD Applications of Significantly Downsized SI Engines Using Alcohol...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

SI Engines Using Alcohol DI for Knock Avoidance Direct injection of a second fuel (ethanol or methanol) is explored as a means of avoiding knock in turbocharged,...

255

Studies of oxidized hexagonal SiC surfaces and the  

Science Journals Connector (OSTI)

Results of recent photoemission studies of oxidation of hexagonal SiC surfaces and SiO2/SiC interfaces are reviewed and discussed. These investigations have focused on two main questions thought to have a significant effect on MOS device characteristics: the existence of carbon clusters or carbon-containing by-products and the existence of sub-oxides at the SiO2/SiC interface. The presentation is focused on Si-terminated surfaces of hexagonal n-type SiC(0001) crystals since they to date have been considered the most promising for device applications. The results reviewed show that no carbon clusters or carbon-containing by-product can be detected at the interface of in situ or ex situ grown samples with an oxide layer thickness larger than about 10 Å. Since the presence of carbon clusters was suggested in a recent scanning microscopy study it appears that they may exist, possibly depending on the sample preparation method used, but in such low concentrations that they are not detectable using photoemission. The presence of sub-oxides at the SiO2/SiC interface has been revealed in recorded Si 2p core level spectra by several groups. The results were not unanimous, however. The number of sub-oxides present and the shifts reported were different. The results of a recent study including also the Si 1s core level and Si KLL Auger transitions are therefore examined. These together with earlier Si 2p data show the presence of only one sub-oxide, assigned to Si1+ oxidation states, besides the fully developed SiO2 (Si4+). Possible reasons for the differences obtained earlier are discussed. That the sub-oxide is located at the interface is concluded from the relative intensity variations observed for the different components versus electron emission angle. An oxide thickness dependence of the SiO2 chemical shift in the core levels and Auger transitions is shown, similar to but smaller in magnitude than the thickness dependence revealed earlier for SiO2/Si. On cooled SiC(0001) substrates, adsorption of metastable molecular oxygen is suggested to occur in the initial oxidation stage like on the Si(111)-7 ? 7 surface. Oxidation results from the C-terminated surface and some preliminary results for the non-polar and surfaces are included and they show distinct differences both as regards the sub-oxides present and the amount of carbon-containing by-products at the interface in the initial oxidation stage compared to the Si-terminated SiC(0001) surface.

C Virojanadara; L I Johansson

2004-01-01T23:59:59.000Z

256

Sponge-like Si-SiO{sub 2} nanocomposite—Morphology studies of spinodally decomposed silicon-rich oxide  

SciTech Connect (OSTI)

Sponge-like Si nanostructures embedded in SiO{sub 2} were fabricated by spinodal decomposition of sputter-deposited silicon-rich oxide with a stoichiometry close to that of silicon monoxide. After thermal treatment a mean feature size of about 3 nm was found in the phase-separated structure. The structure of the Si-SiO{sub 2} nanocomposite was investigated by energy-filtered transmission electron microscopy (EFTEM), EFTEM tomography, and atom probe tomography, which revealed a percolated Si morphology. It was shown that the percolation of the Si network in 3D can also be proven on the basis of 2D EFTEM images by comparison with 3D kinetic Monte Carlo simulations.

Friedrich, D.; Schmidt, B.; Heinig, K. H.; Liedke, B.; Mücklich, A.; Hübner, R. [Helmholtz-Zentrum Dresden – Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany)] [Helmholtz-Zentrum Dresden – Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); Wolf, D. [Triebenberg Laboratory, Institute of Structure Physics, Technische Universität Dresden, 01062 Dresden (Germany)] [Triebenberg Laboratory, Institute of Structure Physics, Technische Universität Dresden, 01062 Dresden (Germany); Kölling, S. [Fraunhofer Center Nanoelectronic Technologies, Königsbrücker Str. 180, 01099 Dresden (Germany)] [Fraunhofer Center Nanoelectronic Technologies, Königsbrücker Str. 180, 01099 Dresden (Germany); Mikolajick, T. [NaMLab GmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany) [NaMLab GmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany); Technische Universität Dresden, Nöthnitzer Str. 64, 01187 Dresden (Germany)

2013-09-23T23:59:59.000Z

257

Open chain versus cyclic 14-electron triatomics: molecular structures and vibrational frequencies of P2Si, P2C, SiN2 and Si2S  

Science Journals Connector (OSTI)

Since the studies of Walsh in the 1950s, triatomic molecules have provided a field of investigation for the fundamentals of bonding. A general consensus has been that rings are higher in energy than open chains due to the strain associated with narrow bond angles. The 14-valence-electron triatomics P2Si, P2C, SiN2, and Si2S were investigated using ab initio molecular quantum mechanical methods. Double zeta plus polarization (DZP) and triple zeta plus double polarization (TZ2P) basis sets have been used in conjunction with self-consistent field (SCF), single and double excitation configuration interaction (CISD) and coupled cluster (CCSD) methods. The all third period \\{P2Si\\} and Si2S were found to have rings as their lowest-energy geometries. The ring geometry of P2C is high in energy because it necessitates formation of a carbene. The ring geometry of SiN2 is only about 5 kcal/mol above the linear Si?N?N isomer.

Randall D. Davy; Henry F. Schaefer III

1996-01-01T23:59:59.000Z

258

Hydrogen incorporation during deposition of a-Si:H from an intense source of SiH{sub 3}  

SciTech Connect (OSTI)

The incorporation of hydrogen during the fast deposition of a-Si:H from an expanding thermal arc is investigated by means of isotope labeling of the precursor gases silane and hydrogen. It is found that hydrogen in a-Si:H originates dominantly from the silyl radical. A small fraction of the hydrogen in a-Si:H is due to exchange reaction of atomic hydrogen in the plasma with hydrogen chemisorbed on the surface during growth.

Van de Sanden, M.C.M.; Severens, R.J.; Kessels, W.M.M.; Van de Pas, F.; Van Ijzendoorn, L.; Schram, D.C.

1997-07-01T23:59:59.000Z

259

Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Diffusion of Fission Product Surrogates  

SciTech Connect (OSTI)

MAX phases, such as titanium silicon carbide (Ti3SiC2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti3SiC2 has been suggested in the literature as a possible fuel cladding material. Prior to the application, it is necessary to investigate diffusivities of fission products in the ternary compound at elevated temperatures. This study attempts to obtain relevant data and make an initial assessment for Ti3SiC2. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti3SiC2, SiC, and a dual-phase nanocomposite of Ti3SiC2/SiC synthesized at PNNL. Thermal annealing and in-situ Rutherford backscattering spectrometry (RBS) were employed to study the diffusivity of the various implanted species in the materials. In-situ RBS study of Ti3SiC2 implanted with Au ions at various temperatures was also performed. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti3SiC2 occurs during ion implantation at 873 K. Cs in Ti3SiC2 is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti3SiC2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Further studies of the related materials are recommended.

Henager, Charles H.; Jiang, Weilin

2014-11-01T23:59:59.000Z

260

Record of Decision for the Electrical Interconnection of TransAlta Centralia Generation LLC Big Hanaford Project (DOE/EIS-0183)(10/19/01)  

Broader source: Energy.gov (indexed) [DOE]

for the for the Electrical Interconnection of TransAlta Centralia Generation LLC Big Hanaford Project INTRODUCTION The Bonneville Power Administration (BPA) has decided to offer contract terms for integrating power from the TransAlta Centralia Generation LLC Big Hanaford Project, a 248-megawatt (MW) gas-fired, combined-cycle combustion turbine (CCCT) power generation project (Project), into the Federal Columbia River Transmission System (FCRTS). The Project is located within an industrial area adjacent to TransAlta's existing Centralia Steam Plant in Lewis County, Washington. The West Coast is experiencing a shortfall in electric energy supply, as well as a volatile wholesale power market in which prices have reached record highs. The Project is one of

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Cathodoluminescence of Cd4SiS6?, Cd4SiSe6?, and Si-Doped CdS, CdSe, and CdTe Crystals  

Science Journals Connector (OSTI)

CdS, CdSe, and CdTe single crystals were vapor-phase-doped with the corresponding silicon chalcogenides under nearly...4SiS6and Cd4SiSe6crystals were measured. Metastable, sphalerite CdS?Si? and CdSe?Si? films we...

I. N. Odin; M. V. Chukichev; V. A. Ivanov; M. E. Rubina

2001-05-01T23:59:59.000Z

262

Microscopic identification of the compensation mechanisms in Si-doped GaAs  

Science Journals Connector (OSTI)

The compensation mechanisms of SiGa donors in GaAs are determined by scanning tunneling microscopy. With increasing Si concentration the SiGa donors are consecutively electrically deactivated by SiAs acceptors, Si clusters, and SiGa-Ga-vacancy complexes. A microscopic model based on the screened Coulomb interaction between charged dopants, the amphoteric nature of Si, and the Fermi-level effect is proposed. It explains the observed defects, the critical Si concentrations of each identified mechanism, and predicts the solubility limit of Si in GaAs. © 1996 The American Physical Society.

C. Domke, Ph. Ebert, M. Heinrich, and K. Urban

1996-10-15T23:59:59.000Z

263

The novel usage of spectroscopic ellipsometry for the development of amorphous Si solar cells  

E-Print Network [OSTI]

May 2010 Keywords: a-Si:H Thin film Si solar cell Spectroscopic ellipsometry (SE) a b s t r a c t We analyzed with relation to structural and electrical properties of a-Si:H thin film for solar cell and faster methodology to develop a-Si:H thin film for thin film Si solar cells using SE measurements

Park, Byungwoo

264

Photoemission study of Si(111)-Ge(5×5) surfaces  

Science Journals Connector (OSTI)

Photoemission spectroscopy was used to study Si(111)-Ge(5×5) surfaces prepared by annealing Ge films deposited onto Si(111)-(7×7) substrates. The Si 2p core-level line shape was modified in going from (7×7) to (5×5) systems. By decomposing the spectra into bulk- and surface-shifted components the changes in line shape were identified as due to selective replacement of Si by Ge in different layers of the substrate, without any drastic change in the surface structure. The Ge 3d core-level line shape for the Si(111)-Ge(5×5) surface was also measured and compared with that for the Ge(111)-c(2×8) surface. These results are discussed in terms of models for the Si(111)-(7×7) structure. A surface state was observed on the Si(111)-Ge(5×5) surface, which gave rise to a metalliclike Fermi edge in the angle-integrated spectra; a similar surface state was observed on the Si(111)-(7×7) surface but not on the Ge(111)-c(2×8) surface.

T. Miller; T. C. Hsieh; T. -C. Chiang

1986-05-15T23:59:59.000Z

265

Point Defect Configurations of Supersaturated Au Atoms Inside Si  

E-Print Network [OSTI]

, Dhananjay Kumar,, Sokrates T. Pantelides,,# and Stephen J. Pennycook,# Materials Science and Technology Di, Spain, Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany, and Department of stable silicides in the Au-Si phase diagram suggests growth of clean Si nanowires might be possible

Pennycook, Steve

266

Quantum confinement in single layer a-Si:H films  

SciTech Connect (OSTI)

Quantum confinement effects in the transmission spectrum of thin amorphous silicon, a-Si:H, films require a coherence length comparable to the film thickness, as well as good film homogeneity. After a careful investigation, the authors conclude that there is no quantum confinement in single layer a-Si:H films at room temperature.

Koehler, S.A.; Fritzsche, H. [Univ. of Chicago, IL (United States)

1996-12-31T23:59:59.000Z

267

Astrophysically important {sup 26}Si states studied with the {sup 28}Si(p,t){sup 26}Si reaction. II. Spin of the 5.914-MeV {sup 26}Si level and galactic {sup 26}Al production  

SciTech Connect (OSTI)

The {sup 28}Si(p,t){sup 26}Si reaction has been studied to resolve a controversy surrounding the properties of the {sup 26}Si level at 5.914 MeV and its contribution to the {sup 25}Al(p,{gamma}){sup 26}Si reaction rate in novae, which affects interpretations of galactic {sup 26}Al observations. Recent studies have come to contradictory conclusions regarding the spin of this level (0{sup +} or 3{sup +}), with a 3{sup +} assignment implying a large contribution by this level to the {sup 25}Al(p,{gamma}){sup 26}Si reaction rate. We have extended our previous study [Bardayan et al., Phys. Rev. C 65, 032801(R) (2002)] to smaller angles and find the angular distribution of tritons populating the 5.914-MeV level in the {sup 28}Si(p,t){sup 26}Si reaction to be consistent with either a 2{sup +} or 3{sup +} assignment. We have calculated reaction rates under these assumptions and used them in a nova nucleosynthesis model to examine the effects of the remaining uncertainties in the {sup 25}Al(p,{gamma}){sup 26}Si rate on {sup 26}Al production in novae.

Bardayan, D. W.; Blackmon, J. C.; Hix, W. R.; Liang, J. F.; Smith, M. S. [Physics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Howard, J. A.; Kozub, R. L. [Physics Department, Tennessee Technological University, Cookeville, Tennessee 38505 (United States); Brune, C. R. [Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701 (United States); Chae, K. Y. [Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996 (United States); Johnson, M. S. [Oak Ridge Associated Universities, Bldg 6008, P. O. Box 2008, Oak Ridge, Tennessee 37831 (United States); Jones, K. L.; Pain, S. D.; Thomas, J. S. [Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States); Lingerfelt, E. J.; Scott, J. P. [Physics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996 (United States); Livesay, R. J. [Department of Physics, Colorado School of Mines, Golden, Colorado 80401 (United States); Visser, D. W. [Department of Physics and Astronomy, University of North Carolina, Chapel Hill, North Carolina 27599 (United States)

2006-10-15T23:59:59.000Z

268

The role of lattice excitation in Si etching  

E-Print Network [OSTI]

The chemistries of fluorine, F?, and xenon difluoride, XeF?, with clean Si are basically the same, while their chemistries diverge dramatically past I ML F coverage. With a clean Si surface, F? and XeF? react utilizing an ...

Blair, Michael Ryan

2014-01-01T23:59:59.000Z

269

Processing and Oxidation Behavior of Nb-Si-B Intermetallics  

SciTech Connect (OSTI)

Single phase materials of {alpha}-Nb{sub 5}Si{sub 3}, Nb{sub 5}(Si,B){sub 3} (T2) and Nb{sub 5}Si{sub 3}B{sub x} (D8{sub 8}) in the Nb-Si-B system were prepared by powder metallurgy processing. T2 was almost fully dense, while {alpha}-Nb{sub 5}Si{sub 3} and D8{sub 8} were porous after sintering at 1900 C for 2 hours. The lattice parameters of T2 decreased linearly with the substitution of B for Si. Isothermal oxidation testing at 1000 C in flowing air indicated that the oxidation resistances of T2 and D8{sub 8} are much better than {alpha}-Nb{sub 5}Si{sub 3}, but still extremely poor compared to the boron-modified Mo{sub 5}Si{sub 3}. Extensive cracking in the oxide scale and matrix were observed and arose from the volume expansion associated with the formation of Nb{sub 2}O{sub 5} and boron-containing silica glass.

Y.LIU; A.J. Thom; M.J. Kramer; M. Akinc

2004-09-30T23:59:59.000Z

270

Magnetic Properties of Single-Crystalline CoSi Nanowires  

E-Print Network [OSTI]

CoxSi alloys showed possible use of metal silicides in the future Si-based spintronics technology.3,10 Because metal silicide NWs can be used as interconnects in integrated circuits and they are compatible with the processing of complementary metal-oxide-semiconductor (CMOS) de- vices,11 synthesis of metal silicide NWs

Kim, Bongsoo

271

Hafnium silicide formation on Si(100) upon annealing  

SciTech Connect (OSTI)

High dielectric constant materials, such as HfO{sub 2}, have been extensively studied as alternatives to SiO{sub 2} in new generations of Si based devices. Hf silicate/silicide formation has been reported in almost all literature studies of Hf based oxides on Si, using different methods of preparation. A silicate interface resembles close to the traditional Si/SiO{sub 2}. The silicate very likely forms a very sharp interface between the Si substrate and the metal oxide, and would be suitable for device applications. However, the thermal instability of the interfacial silicate/oxide film leads to silicidation, causing a dramatic loss of the gate oxide integrity. Despite the importance of the Hf silicide surface and interface with Si, only a few studies of this surface are present in the literature, and a structural determination of the surface has not been reported. This paper reports a study of the Hf silicide formation upon annealing by using a combination of XPS, LEED, and x-ray photoelectron diffraction (XPD) analyses. Our results clearly indicate the formation of a unique ordered Hf silicide phase (HfSi{sub 2}), which starts to crystallize when the annealing temperature is higher than 550 deg. C.

Siervo, A. de [Experimentelle Physik 1, Universitaet Dortmund, Otto-Hahn-Str. 4, D 44221 Dortmund (Germany); Laboratorio Nacional de Luz Sincrotron, Caixa Postal 6192, 13084-971, Campinas, Sao Paulo (Brazil); Fluechter, C. R.; Weier, D.; Schuermann, M.; Dreiner, S.; Westphal, C. [Experimentelle Physik 1, Universitaet Dortmund, Otto-Hahn-Str. 4, D 44221 Dortmund (Germany); Carazzolle, M. F.; Pancotti, A.; Landers, R.; Kleiman, G. G. [Instituto de Fisica 'Gleb Wataghin', Universidade Estadual de Campinas, Caixa Postal 6165, 13083-970, Campinas, Sao Paulo (Brazil)

2006-08-15T23:59:59.000Z

272

SiGeCSi superlattice microcoolers Xiaofeng Fan,a)  

E-Print Network [OSTI]

stabilization of microelectronic and optoelectronic devices. SiGeC can be lattice matched to Si and optoelectronic devices, but their pro- cessing is a bulk technology and is incompatible with inte- grated circuit fabrication process. Solid-state coolers mono- lithically integrated with microelectronic and optoelectronic

273

Temperature Dependent Thermal Conductivity of Si/SiC Amorphous Multilayer Films  

SciTech Connect (OSTI)

The cross-plane thermal conductivity of 22 nm period Si/SiC amorphous multilayer films deposited by magnetron sputtering and measured using a differential 3{omega} method was found to decrease from 2.0 W/mK at 300 K to 1.1 W/mK at 80 K. Structural disorder in each of the constituent layers of the amorphous multilayer films was confirmed by high resolution transmission electron microscopy. Estimations of the relative contributions of interface and intrinsic layer thermal resistance based on microscopic phonon transport models indicate that mean free path reductions induced by the structural disorder within the multilayer films are responsible for the observed experimental trends.

Mazumder, M.; Solovyov, S.; Borca-Tasciuc, T.; Teehan, S.C.; Stinzianni, E.; Efstathiadis, H.

2010-03-01T23:59:59.000Z

274

Localized Si enrichment in coherent self-assembled Ge islands grown by molecular beam epitaxy on (001)Si single crystal  

SciTech Connect (OSTI)

Transmission electron microscopy (TEM), atomic force microscopy, and Rutherford backscattering spectrometry (RBS) have been used to investigate the morphology, structure, and composition of self-assembled Ge islands grown on Si (001) substrates by molecular beam epitaxy (MBE) at different temperatures. Increasing the temperature from 550 Degree-Sign C to 700 Degree-Sign C causes progressive size and shape uniformity, accompanied by enhanced Si-Ge intermixing within the islands and their wetting layer. Elemental maps obtained by energy filtered-TEM (EF-TEM) clearly show pronounced Si concentration not only in correspondence of island base perimeters, but also along their curved surface boundaries. This phenomenon is strengthened by an increase of the growth temperature, being practically negligible at 550 Degree-Sign C, while very remarkable already at 650 Degree-Sign C. The resulting island shape is affected, since this localized Si enrichment not only provides strain relief near their highly stressed base perimeters but it also influences the cluster surface energy by effective alloying, so as to form Si-enriched SiGe interfaces. Further increase to 700 Degree-Sign C causes a shape transition where more homogenous Si-Ge concentration profiles are observed. The crucial role played by local 'flattened' alloyed clusters, similar to truncated pyramids with larger bases and enhanced Si enrichment at coherently stressed interfaces, has been further clarified by EF-TEM analysis of a multi-layered Ge/Si structure containing stacked Ge islands grown at 650 Degree-Sign C. Sharp accumulation of Si has been here observed not only in proximity of the uncapped island surface in the topmost layer but also at the buried Ge/Si interfaces and even in the core of such capped Ge islands.

Valvo, M. [Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95127 Catania (Italy); Bongiorno, C.; Giannazzo, F. [IMM-CNR, VIII strada 5, 95121 Catania (Italy); Terrasi, A. [Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95127 Catania (Italy); MATIS IMM-CNR UOS Catania (Universita), via S. Sofia 64, 95123 Catania (Italy)

2013-01-21T23:59:59.000Z

275

Formation and incorporation of SiF{sub 4} molecules in F-implanted preamorphized Si  

SciTech Connect (OSTI)

The local structure of fluorine incorporated in crystalline silicon following solid phase epitaxial regrowth was investigated by means of x-ray absorption spectroscopy at the F K-edge. We clearly demonstrate that most F is found in SiF{sub 4} molecules in the crystalline matrix. A kinetic pathway, which explains our observation and which is also able to rationalize previous results in a common and coherent framework, is proposed.

De Salvador, D.; Bisognin, G.; Napolitani, E.; Mastromatteo, M.; Baggio, N.; Carnera, A. [MATIS INFM-CNR and Department of Physics, Padova University, via Marzolo 8, 35131 Padova (Italy); Boscherini, F. [Department of Physics and CNISM, Bologna University, viale C. Berti Pichat 6/2, 40127 Bologna (Italy); Impellizzeri, G.; Mirabella, S.; Boninelli, S.; Priolo, F. [MATIS INFM-CNR and Department of Physics and Astronomy, Catania University, via S. Sofia 64, 95123 Catania (Italy); Cristiano, F. [LAAS-CNRS, Toulouse University, 7 av. du Colonel Roche, 31077 Toulouse (France)

2009-09-07T23:59:59.000Z

276

Substitutional B in Si: Accurate lattice parameter determination  

SciTech Connect (OSTI)

In this work the lattice deformation induced by substitutional B in Si is carefully determined by using different experimental techniques. The investigated Si{sub 1-x}B{sub x}/Si layers x=(0.0012 divide 0.005) are grown by solid phase epitaxy of B-implanted preamorphized Si and by molecular beam epitaxy. Nuclear reaction analysis both in random and in channeling geometry, secondary ion mass spectrometry and high resolution x-ray diffraction allow to quantify the total amount of B and its lattice location, the B depth profile and the B-doped Si lattice parameter, respectively. The reasons for the large spread present in the data reported so far in literature are discussed. Our results, thanks to the synergy of the earlier techniques, lead to a significantly more accurate strain determination, that is in agreement with very recent ab initio theoretical calculations.

Bisognin, G.; De Salvador, D.; Napolitani, E.; Berti, M.; Carnera, A.; Mirabella, S.; Romano, L.; Grimaldi, M. G.; Priolo, F. [MATIS CNR-INFM and Dipartimento di Fisica, Universita di Padova, via Marzolo 8, 35131 Padova (Italy); MATIS CNR-INFM and Dipartimento di Fisica ed Astronomia, Universita di Catania, via S. Sofia 64, 95123 Catania (Italy)

2007-05-01T23:59:59.000Z

277

Translocation and encapsulation of siRNA inside carbon nanotubes  

E-Print Network [OSTI]

We report spontaneous translocation of small interfering RNA (siRNA) inside carbon nanotubes (CNTs) of various diameters and chirality using all atom molecular dynamics (MD) simulations with explicit solvent. We use Umbrella sampling method to calculate the free energy landscape of the siRNA entry and translocation event. Free energy profiles shows that siRNA gains free energy while translocating inside CNT and barrier for siRNA exit from CNT ranges from 40 to 110 kcal/mol depending on CNT chirality and salt concentration. The translocation time \\tau decreases with the increase of CNT diameter with a critical diameter of 24 \\AA for the translocation. In contrast, double strand DNA (dsDNA) of the same sequence does not translocate inside CNT due to large free energy barrier for the translocation. This study helps in understanding the nucleic acid transport through nanopores at microscopic level and may help designing carbon nanotube based sensor for siRNA.

Santosh Mogurampelly; Prabal K. Maiti

2012-12-11T23:59:59.000Z

278

Metal silicide/poly-Si Schottky diodes for uncooled microbolometers  

E-Print Network [OSTI]

Nickel silicide Schottky diodes formed on polycrystalline Si films are proposed as temperature sensors of monolithic uncooled microbolometer IR focal plane arrays. Structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by transmission electron microscopy. The Ni silicide has been identified as two-phase compound with the volume fraction of Ni_2Si:NiSi>~4:1. Two potential barriers (~0.74 and ~0.51 meV) are registered by photo-emf spectroscopy at 80K and attributed to Ni/Si and Ni-silicide/Si interfaces. I-V characteristics of the diodes studied at different temperatures demonstrate temperature coefficients of voltage and current to vary in absolute value from 0.3 to 0.6%/K for forward biased structures and around 2.5%/K for reverse biased ones.

Chizh, K V; Kalinushkin, V P; Resnik, V Ya; Storozhevykh, M S; Yuryev, V A

2013-01-01T23:59:59.000Z

279

Passivation of paramagnetic Si?SiO2 interface states with molecular hydrogen  

Science Journals Connector (OSTI)

Dry thermal oxides were grown on (111) silicon substrates at 850?°C. The P b centers associated with this (111) Si?SiO2 interface were observed with electron paramagnetic resonance to be stable under subsequent annealing in vacuum up to at least 850?°C. The rate of passivation of P b centers with H2 was observed to be proportional to the concentration of H2 in the oxide and the density of P b centers. The forward reaction rate constantk f is temperature dependent and obeys the Arrhenius relationship having an activation energyE f of 1.66±0.06 eV and a pre?exponential factor k 0f of 1.94 (+2./?1.)×10?6 cm3 /s for temperatures at least between 230 and 260?°C. The linear H2 pressure dependence in the rate of passivation and the magnitude of k 0f are reasonably consistent with a model in which the H2 molecule reacts directly with P b centers during its diffusional motion among the interstices of the SiO2 network and the reaction site at P b centers.

K. L. Brower

1988-01-01T23:59:59.000Z

280

Mechanistic Selection and Growth of Twinned Bicrystalline Primary Si in Near Eutectic Al-Si Alloys  

SciTech Connect (OSTI)

Morphological evolution and selection of angular primary silicon is investigated in near-eutectic Al-Si alloys. Angular silicon arrays are grown directionally in a Bridgman furnace at velocities in the regime of 10{sup -3} m/sec and with a temperature gradient of 7.5 x 10{sup 3} K/m. Under these conditions, the primary Si phase grows as an array of twinned bicrystalline dendrites, where the twinning gives rise to a characteristic 8-pointed star-shaped primary morphology. While this primary Si remains largely faceted at the growth front, a complex structure of coherent symmetric twin boundaries enables various adjustment mechanisms which operate to optimize the characteristic spacings within the primary array. In the work presented here, this primary silicon growth morphology is examined in detail. In particular, this thesis describes the investigation of: (1) morphological selection of the twinned bicrystalline primary starshape morphology; (2) primary array behavior, including the lateral propagation of the starshape grains and the associated evolution of a strong <100> texture; (3) the detailed structure of the 8-pointed star-shaped primary morphology, including the twin boundary configuration within the central core; (4) the mechanisms of lateral propagation and spacing adjustment during array evolution; and (5) the thermosolutal conditions (i.e. operating state) at the primary growth front, including composition and phase fraction in the vicinity of the primary tip.

Choonho Jung

2006-12-12T23:59:59.000Z

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics  

E-Print Network [OSTI]

The use of disilane (Si2H6) rather than silane (SiH4) for Si 001 gas-source molecular-beam epitaxy GS

Spila, Timothy P.

282

EELS measurements of boron concentration profiles in p-a-Si and nip a-Si solar cells Bas B. Van Aken a,  

E-Print Network [OSTI]

that the optimum efficiency in nip solar cells is obtained when the p-a-SiC band gap is slightly larger than efficiency nip solar cells based on amorphous (a- Si:H) and microcrystalline (c-Si:H) silicon thin films efficiency Si solar cells, it is very important to control and limit the diffusion of B and C atoms

Dunin-Borkowski, Rafal E.

283

Scale Up of Si/Si0.8GE0.2 and B4C/B9C Superlattices for Harvesting...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Scale Up of SiSi0.8GE0.2 and B4CB9C Superlattices for Harvesting of Waste Heat in Diesel Engines Scale Up of SiSi0.8GE0.2 and B4CB9C Superlattices for Harvesting of Waste Heat...

284

Mon. Not. R. Astron. Soc. 379, 229246 (2007) doi:10.1111/j.1365-2966.2007.11930.x Production of trans-Neptunian binaries through chaos-assisted capture  

E-Print Network [OSTI]

of trans-Neptunian binaries through chaos-assisted capture Ernestine A. Lee,1 Sergey A. Astakhov2 into past and present conditions in the trans-Neptunian part of the Solar System. For example, knowledge recently proposed a binary object formation model based on the notion of chaos- assisted capture (CAC

Astakhov, Sergey

285

Synthesis of 4-substituted-trans-1,2-diaminocyclohexyl polyaminocarboxylate metal chelating agents for the preparation of stable radiometal antibody immunoconjugates for therapy and SPECT and PET imaging  

DOE Patents [OSTI]

Cyclohexyl chelating agents useful in forming antibody-metal conjugates which are used for diagnostic and therapeutic purposes are synthesized. New compounds and processes of forming these compounds are disclosed including 4-haloacetamido-trans-1,2-diaminocyclohexyl polyaminocarboxylate and 4-isothiocyanato-trans-1,2-diamino cyclohexane-N,N,N{prime},N{prime}-tetra acetic acid.

Mease, R.C.; Kolsky, K.L.; Mausner, L.F.; Srivastava, S.C.

1997-06-03T23:59:59.000Z

286

Electromagnetic dissociation of relativistic [sup 28]Si by nucleon emission  

SciTech Connect (OSTI)

A detailed study of the electromagnetic dissociation of [sup 28]Si by nucleon emission at E[sub lab]/A = 14.6 (GeV/nucleon was carried out with [sup 28]Si beams interacting on [sup 208]Pb). [sup 120]Sn. [sup 64]C targets. The measurements apparatus consists of detectors in the target area which measure the energy and charged multiplicity, and a forward spectrometer which measures the position, momentum and energy of the reaction fragments. The exclusive electromagnetic dissociation cross sections for decay channels having multiple nucleons in the final state have been measured which enables the selection of events produced in pure electromagnetic interactions. The measured cross sections agree well with previous measurements obtained for the removal of a few nucleons as well as with measurements on total charge removal cross sections from other experiments. The dependence of the integrated cross sections on the target charge Z[sub T] and the target mass AT confirms that for higher Z targets the excitation is largely electromagnetic. Direct measurements of the excitation energy for the electromagnetic dissociation of [sup 28]Si [yields] p+[sup 27]Al and [sup 28]Si [yields] n+[sup 27]Si have been obtained through a calculation of the invariant mass in kinematically, reconstructed events. The excitation energy spectrum for all targets peak near the isovector giant dipole resonance in [sup 28]Si. These distributions are well reproduced by combining the photon spectrum calculated using the Weizsaecker-Williams approximation with the experimental data on the photonuclear [sup 28]Si([sub [gamma],p])[sup 27]Al and [sup 28]Si([sub [gamma],n])[sup 27]Si. The possibilities of observing double giant dipole resonance excitations in [sup 28]Si have been investigated with cross section measurements as well as with excitation energy reconstruction.

Sonnadara, U.J.

1992-12-01T23:59:59.000Z

287

Electromagnetic dissociation of relativistic {sup 28}Si by nucleon emission  

SciTech Connect (OSTI)

A detailed study of the electromagnetic dissociation of {sup 28}Si by nucleon emission at E{sub lab}/A = 14.6 (GeV/nucleon was carried out with {sup 28}Si beams interacting on {sup 208}Pb). {sup 120}Sn. {sup 64}C targets. The measurements apparatus consists of detectors in the target area which measure the energy and charged multiplicity, and a forward spectrometer which measures the position, momentum and energy of the reaction fragments. The exclusive electromagnetic dissociation cross sections for decay channels having multiple nucleons in the final state have been measured which enables the selection of events produced in pure electromagnetic interactions. The measured cross sections agree well with previous measurements obtained for the removal of a few nucleons as well as with measurements on total charge removal cross sections from other experiments. The dependence of the integrated cross sections on the target charge Z{sub T} and the target mass AT confirms that for higher Z targets the excitation is largely electromagnetic. Direct measurements of the excitation energy for the electromagnetic dissociation of {sup 28}Si {yields} p+{sup 27}Al and {sup 28}Si {yields} n+{sup 27}Si have been obtained through a calculation of the invariant mass in kinematically, reconstructed events. The excitation energy spectrum for all targets peak near the isovector giant dipole resonance in {sup 28}Si. These distributions are well reproduced by combining the photon spectrum calculated using the Weizsaecker-Williams approximation with the experimental data on the photonuclear {sup 28}Si({sub {gamma},p}){sup 27}Al and {sup 28}Si({sub {gamma},n}){sup 27}Si. The possibilities of observing double giant dipole resonance excitations in {sup 28}Si have been investigated with cross section measurements as well as with excitation energy reconstruction.

Sonnadara, U.J.

1992-12-01T23:59:59.000Z

288

Resonant tunneling with high peak to valley current ratio in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers at room temperature  

SciTech Connect (OSTI)

We have investigated carrier transport in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers by room temperature current-voltage measurements. Resonant tunneling signatures accompanied by current peaks are observed. Carrier transport in the multi-layers were analyzed by plots of ln(I/V{sup 2}) as a function of 1/V and ln(I) as a function of V{sup 1/2}. Results suggest that besides films quality, nc-Si and barrier sub-layer thicknesses are important parameters that restrict carrier transport. When thicknesses are both small, direct tunneling dominates carrier transport, resonant tunneling occurs only at certain voltages and multi-resonant tunneling related current peaks can be observed but with peak to valley current ratio (PVCR) values smaller than 1.5. When barrier thickness is increased, trap-related and even high field related tunneling is excited, causing that multi-current peaks cannot be observed clearly, only one current peak with higher PVCR value of 7.7 can be observed. While if the thickness of nc-Si is large enough, quantum confinement is not so strong, a broad current peak with PVCR value as high as 60 can be measured, which may be due to small energy difference between the splitting energy levels in the quantum dots of nc-Si. Size distribution in a wide range may cause un-controllability of the peak voltages.

Chen, D. Y., E-mail: cdy7659@126.com [Department of Physics, Nanjing National Laboratory of Microstructures and Key Laboratory of Advanced Photonic and Electronic, materials, Nanjing University, Nanjing 210093 (China); Nanjing University of posts and Telecommunications, Nanjing 210046 (China); Sun, Y.; He, Y. J. [Nanjing University of posts and Telecommunications, Nanjing 210046 (China); Xu, L.; Xu, J. [Department of Physics, Nanjing National Laboratory of Microstructures and Key Laboratory of Advanced Photonic and Electronic, materials, Nanjing University, Nanjing 210093 (China)

2014-01-28T23:59:59.000Z

289

Size Effect of SiC Particle on Microstructures and Mechanical Properties of SiCp/Al Composites  

E-Print Network [OSTI]

matrix composites reinforced with ceramic particles have some attractive properties such as high strengthCp/Al composites were fabricated using aluminum alloy ZL101 as the matrix material, and SiC particles a composite is stretched, most of external load transfers from soft Al matrix to hard SiCp reinforcement

Qin, Qinghua

290

Effect of thin Mo2C layer on thermal stability of Si/SiO2/Ti/Cu system  

Science Journals Connector (OSTI)

The effect of introducing a thin Mo2C (30 nm) layer between Ti and Cu on the thermal stability of Si/SiO2/Ti/Cu system was studied using four-point probe (FPP), scanning electron microscopy (SEM), energy-dispersi...

C. C. Tripathi; Mukesh Kumar; Dinesh Kumar

2011-12-01T23:59:59.000Z

291

29Si Chemical Shift Anisotropies in Calcium Silicates from High-Field 29Si MAS NMR Spectroscopy  

Science Journals Connector (OSTI)

29Si chemical shift anisotropy (CSA) data have been determined from 29Si MAS NMR spectra recorded at 14.1 T for a number of synthetic calcium silicates and calcium silicate hydrates. ... Synthesis. ... In all syntheses, reagents of analytical purity grade were obtained from commercial sources and used without further purification. ...

Michael Ryan Hansen; Hans J. Jakobsen; Jørgen Skibsted

2003-03-06T23:59:59.000Z

292

Synchroton x-ray diffraction study of an interfacial super-structure: a-Si on Ge0.2Si0.8 (111)-5 × 5  

Science Journals Connector (OSTI)

The interfacial structure between amorphous Si (a-Si) and Ge0.2Si0.8 is investigated by grazing incidence X-ray diffraction with the use of a synchroton radiation X-ray source. The sample, a-Si/Ge0.2Si0.8/Si(111) was prepared by molecular beam epitaxy. An a-Si film of 100 Å in thickness was deposited on the surface of Ge0.2Si0.8/Si(111), whose structure was 5 × 5 as confirmed by a RHEED pattern. The Bragg peaks of the X-ray diffraction wereobserved at (45, 45) and(?45, 85)in the two-dimensional reciprocal lattice space. This result indicates that the period of the 5 × 5 reconstructed surface structure is preserved even when the surface is covered with a-Si.

K. Akimoto; J. Mizuki; T. Tatsumi; N. Aizaki; J. Matsui

1987-01-01T23:59:59.000Z

293

Design of plasmonic back structures for efficiency enhancement of thin-film amorphous Si solar cells  

Science Journals Connector (OSTI)

Metallic back structures with one-dimensional periodic nanoridges attached to a thin-film amorphous Si (a-Si) solar cell are numerically studied. At the interfaces between a-Si and...

Bai, Wenli; Gan, Qiaoqiang; Bartoli, Filbert; Zhang, Jing; Cai, Likang; Huang, Yidong; Song, Guofeng

2009-01-01T23:59:59.000Z

294

E-Print Network 3.0 - al si ti Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and SiC. Internal grains of SiC and kamaciteiron silicide are also found independent of TiC. The grain... by volume. V and Si were also present in ... Source: Washington...

295

Interfacial mixing in as-deposited Si/Ni/Si layers analyzed by x-ray and polarized neutron reflectometry  

Science Journals Connector (OSTI)

Interdiffusion occurring across the interfaces in a Si/Ni/Si layered system during deposition at room temperature was probed using x-ray reflectivity (XRR) and polarized neutron reflectivity (PNR). Exploiting the complementarity of these techniques, both structural and magnetic characterization with nanometer depth resolution could be achieved. Suitable model fitting of the reflectivity profiles identified the formation of Ni–Si mixed alloy layers at the Si/Ni and Ni/Si interfaces. The physical parameters of the layered structure, including quantitative assessment of the stoichiometry of interfacial alloys, were obtained from the analyses of XRR and PNR patterns. In addition, PNR provided magnetic moment density profile as a function of depth in the stratified medium.

Debarati Bhattacharya; Saibal Basu; Surendra Singh; Sumalay Roy; Bhupendra Nath Dev

2012-01-01T23:59:59.000Z

296

UNITED STATES ATOMIC ENERGY COMMISSION SAC200063~~0oooo Frank K. Pittman, Director, /Division of Waste Management and Trans-  

Office of Legacy Management (LM)

SAC200063~~0oooo SAC200063~~0oooo .- Frank K. Pittman, Director, /Division of Waste Management and Trans- portation, Headquarters CONTAMIWATRD EE-AEC-OWNED OR IEASED FACILITIES This memorandum responds to your TWX dated October 30, 1973, requesting certain information on the above subject. Unfortunately, some of the documentation necessary to answer your queries is no Longer available due to the records disposal program or the agreements pre- vailing at the time of release or transfer of the facilities. From records that are available and from discussions with personnel most familiar with the transfer operations, we have assurance that the current radiological condition of transferred property is adequate under, present standards. The following tabulations follow the format suggested in your TWX

297

West Texas geothermal resource assessment. Part II. Preliminary utilization assessment of the Trans-Pecos geothermal resource. Final report  

SciTech Connect (OSTI)

The utilization potential of geothermal resources in Trans-Pecos, Texas was assessed. The potential for both direct use and electric power generation were examined. As with the resource assessment work, the focus was on the Hueco Tanks area in northeastern El Paso County and the Presidio Bolson area in Presidio County. Suitable users of the Hueco Tanks and Presidio Bolson resource areas were identified by matching postulated temperature characteristics of the geothermal resource to the need characteristics of existing users in each resource area. The amount of geothermal energy required and the amount of fossil fuel that geothermal energy would replace were calculated for each of the users identified as suitable. Current data indicate that temperatures in the Hueco Tanks resource area are not high enough for electric power generation, but in at least part of the Presidio Bolson resource area, they may be high enough for electric power generation.

Gilliland, M.W.; Fenner, L.B.

1980-01-01T23:59:59.000Z

298

Corrosion Mechanisms of Mild Steel in Aqueous CO2 SolutionsThu Tran Institute for Corrosion and Multiphase Technology, Ohio University  

E-Print Network [OSTI]

Corrosion Mechanisms of Mild Steel in Aqueous CO2 SolutionsThu Tran Institute for Corrosion," Corrosion Science 41, (1999): pp. 117-139. [2] E. Remita, B. Tribollet, E. Sutter, V. Vivier, F. Ropital contribution of the buffering effect," Corrosion Science 50, (2008): pp. 1433-1440. [3] C. DeWaard and D

Botte, Gerardine G.

299

IEICE TRANS. ELECTRON., VOL.E88C, NO.5 MAY 2005 INVITED PAPER Joint Special Section on Recent Progress in Optoelectronics and Communications  

E-Print Network [OSTI]

990 IEICE TRANS. ELECTRON., VOL.E88­C, NO.5 MAY 2005 INVITED PAPER Joint Special Section on Recent in the range 1530 nm 1603 nm is reviewed. After a short discussion of the relevant fabrication methods 1603 nm. Free running lasers of the Fabry P´erot type, harmonically mode-locked lasers (5 ps/10 GHz), Q

Mohseni, Hooman

300

, 20110630, published 5 August 20133712013Phil. Trans. R. Soc. A Minzhong Xu, Shufeng Ye, Ronald Lawler, Nicholas J. Turro and Zlatko Bacic  

E-Print Network [OSTI]

Lawler, Nicholas J. Turro and Zlatko Bacic dependence neutron scattering spectrum and its temperature of the inelastic neutron scattering spectrum and its temperature dependence. Phil Trans R Soc A 371: 20110630. http, spectroscopy, materials science Keywords: hydrogen, fullerenes, inelastic neutron scattering, calculations

Turro, Nicholas J.

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

, 20110627, published 5 August 20133712013Phil. Trans. R. Soc. A Carravetta, S. Mamone, Y. Murata, J. Y.-C. Chen, J. A. Johnson, X. Lei and N. J.  

E-Print Network [OSTI]

. R. Johnson, M. H. Levitt, M. spectradependence of inelastic neutron scattering : temperature60 dependence of inelastic neutron scattering spectra. Phil Trans R Soc A 371: 20110627. http://dx.doi.org/10, spectroscopy Keywords: inelastic neutron scattering, hydrogen endofullerenes, nuclear spin isomerism, quantum

Turro, Nicholas J.

302

Matthew Kam Lessons From Deploying the Remote Transaction System Page 1 of 46 Tu Tran With Three Microfinance Institutions in Uganda  

E-Print Network [OSTI]

Microfinance Institutions in Uganda Lessons From Deploying the Remote Transaction System With Three Microfinance Institutions in Uganda Matthew Kam Department of Electrical Engineering and Computer Sciences Deploying the Remote Transaction System Page 2 of 46 Tu Tran With Three Microfinance Institutions in Uganda

Kam, Matthew

303

Improved Initial Performance of Si Nanoparticles by Surface Oxide Reduction  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Improved Initial Performance of Si Nanoparticles by Surface Oxide Reduction Improved Initial Performance of Si Nanoparticles by Surface Oxide Reduction for Lithium-Ion Battery Application Title Improved Initial Performance of Si Nanoparticles by Surface Oxide Reduction for Lithium-Ion Battery Application Publication Type Journal Article Year of Publication 2011 Authors Xun, Shidi, Xiangyun Song, Michael E. Grass, Daniel K. Roseguo, Z. Liu, Vincent S. Battaglia, and Gao Li Journal Electrochemical Solid-State Letters Volume 14 Start Page A61 Issue 5 Pagination A61-A63 Date Published 02/2001 Keywords Electrochemistry, elemental semiconductors, etching, lithium, nanoparticles, secondary cells, silicon, thermal analysis, transmission electron microscopy, X-ray photoelectron spectra Abstract This study characterizes the native oxide layer of Si nanoparticles and evaluates its effect on their performance for Li-ion batteries. x-ray photoelectron spectroscopy and transmission electron microscopy were applied to identify the chemical state and morphology of the native oxide layer. Elemental and thermogravimetric analysis were used to estimate the oxide content for the Si samples. Hydrofluoric acid was used to reduce the oxide layer. A correlation between etching time and oxide content was established. The initial electrochemical performances indicate that the reversible capacity of etched Si nanoparticles was enhanced significantly compared with that of the as-received Si sample.

304

Development of an SI DI Ethanol Optimized Flex Fuel Engine Using...  

Broader source: Energy.gov (indexed) [DOE]

Development of an SI DI Ethanol Optimized Flex Fuel Engine Using Advanced Valvetrain Development of an SI DI Ethanol Optimized Flex Fuel Engine Using Advanced Valvetrain...

305

Atomic-Level Computer Simulation of SiC: Defect Accumulation...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Atomic-Level Computer Simulation of SiC: Defect Accumulation, Mechanical Properties and Defect Recovery. Atomic-Level Computer Simulation of SiC: Defect Accumulation, Mechanical...

306

E-Print Network 3.0 - al si fe Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

morphology... -section of a strut showing the microstructure. Dendrites of -Al and eutectic structure of Al-Si with needles of - AlFeSi... . ... Source: Groningen,...

307

Comparison of the Photodesorption Activities of cis-Butene, trans-Butene and Isobutene on the Rutile TiO2(110) Surface  

SciTech Connect (OSTI)

The chemical and photochemical properties of three butene molecules (cis-butene, trans-butene and isobutene) were explored on the clean rutile TiO2(110) surface using temperature programmed desorption (TPD) and photon simulated desorption (PSD). At the low coverage limit, trans-butene was the most strongly bound butene on the TiO2(110) surface, desorbing at ~ 210 K, however increased intermolecular repulsions between trans-butene molecules at higher coverage diminished its binding. Both cis-butene and isobutene saturated the first layer on TiO2(110) at a coverage of ~0.50 ML in a single TPD feature at 184 and 192 K, respectively. In contrast, the maximum coverage that trans-butene could achieve in its 210 K peak was ~1/3 ML, with higher coverages resulting a low temperature desorption at ~137 K. Coverages of these molecules above 0.50 ML resulted in population of second layer and multilayer states. The instability of trans-butene at a coverage of 0.5 ML on the surface was linked to the inversion center in its symmetry. In the absence of coadsorbed oxygen, the primary photochemical pathway of each butene molecule on TiO2(110) was photodesorption. The photoactivities of these molecules on TiO2(110) at an initial coverage of 0.50 ML followed the trend: isobutene > cis-butene > trans-butene. In contrast, the photoactivities of low coverages of cis-butene and trans-butene exceeded those measured at 0.50 ML. These data suggest that intermolecular interactions (repulsions) play a significant role in diminishing the photoactivities of weakly bound molecules on TiO2 photocatalysts. Work reported here was supported by the U.S. Department of Energy, Office of Basic Energy Science, Division of Chemical Sciences, Geosciences, and Biosciences, and performed in the Williams R. Wiley Environmental Molecular Science Laboratory (EMSL), a Department of Energy user facility funded by the Office of Biological and Environmental Research. Pacific Northwest National Laboratory is a multiprogram national laboratory operated for the U.S. Department of Energy by the Battelle Memorial Institute under contract DEAC05-76RL01830.

Henderson, Michael A.

2013-11-14T23:59:59.000Z

308

Super?bandgap radiation in a?Si  

Science Journals Connector (OSTI)

The nature of the super?bandgap radiation observed in a?Si and a?Si:H is investigated. This broad spectrum postulated to arise from localized states above the mobility gap exhibits many remarkable features. These same features occur in radiation from porous quartz but in that case the effect is known to be surface related.2 Using the Raman spectrum for calibration the strength of the signal from a?Si has been studied as a function of surface preparation. The results suggest the possibility that the radiation is a surface contaminant effect unrelated to the bulk states of the material.

B. A. Wilson

1981-01-01T23:59:59.000Z

309

Electronic stopping power for heavy ions in SiC and SiO2  

SciTech Connect (OSTI)

Accurate information of electronic stopping power is fundamental for broad advances in electronic industry, space exploration, national security, and sustainable energy technologies. The Stopping and Range of Ions in Matter (SRIM) code has been widely applied to predict stopping powers and ion distributions for decades. Recent experimental results have, however, shown considerable errors in the SRIM predictions for stopping of heavy ions in compounds containing light elements, indicating an urgent need to improve current stopping power models. The electronic stopping powers of 35Cl, 80Br, 127I, and 197Au ions are experimentally determined in two important functional materials, SiC and SiO2, from tens to hundreds keV/u based on a single ion technique. By combining with the reciprocity theory, new electronic stopping powers are suggested in a region from 0 to 15 MeV, where large deviations from SRIM predictions are observed. For independent experimental validation of the electronic stopping powers we determined, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) are utilized to measure the depth profiles of implanted Au ions in SiC with energies from 700 keV to 15 MeV. The measured ion distributions from both RBS and SIMS are considerably deeper (up to ~30%) than the predictions from the commercial SRIM code. In comparison, the new electronic stopping power values are utilized in a modified TRIM-85 (the original version of the SRIM) code, M-TRIM, to predict ion distributions, and the results are in good agreement with the experimentally measured ion distributions.

Jin, Ke [University of Tennessee, Knoxville (UTK)] [University of Tennessee, Knoxville (UTK); Zhang, Yanwen [ORNL] [ORNL; Zhu, Zihua [Pacific Northwest National Laboratory (PNNL)] [Pacific Northwest National Laboratory (PNNL); Grove, David A. [Luxel Corporation] [Luxel Corporation; Xue, Haizhou [University of Tennessee, Knoxville (UTK)] [University of Tennessee, Knoxville (UTK); Xue, Jianming [Peking University] [Peking University; Weber, William J [ORNL] [ORNL

2014-01-01T23:59:59.000Z

310

Atomic-Scale Engineering of the SiC-SiO{sub 2} Interface  

SciTech Connect (OSTI)

We report results from three distinct but related thrusts that aim to elucidate the atomic-scale structure and properties of the Sic-SiO{sub 2} interface. (a) First-principles theoretical calculations probe the global bonding arrangements and the local processes during oxidation; (b) Z-contrast atomic-resolution transmission electron microscopy and electron-energy-loss spectroscopy provide images and interface spectra, and (c) nuclear techniques and electrical measurements are used to profile N at the interface and determine interface trap densities.

Buczko, R.; Chung, G.; Di Ventra, M.; Duscher, G.; Feldman, L.C.; Huang, M.B.; McDonald, K.; Pantelides, S.T.; Pennycook, S.J.; Radtke, C.; Stedile, F.C.; Tin, C.C.; Weller, R.A. Baumvol, I.; Williams, J.R.; Won, J.

1999-11-14T23:59:59.000Z

311

Synthesis, assembly, and characterization of Si nanocrystals and Si nanocrystal–carbon  

Science Journals Connector (OSTI)

Silicon nanocrystals of a few nanometers in size are of great interest for optoelectronic applications. Here we present a mini-arc plasma method to produce silicon nanocrystals at atmospheric pressure directly from solid silicon precursors. The product silicon nanocrystals are then assembled onto the external surface of carbon nanotubes (CNTs) to form hybrid nanostructures. The absorption properties of both the silicon nanocrystals and the Si–CNT hybrid structures have been characterized. Quantum size effects have been observed for as-produced silicon nanocrystals. The resulting silicon nanocrystals and hybrid nanostructures are promising for optoelectronic applications.

Ming Liu; Ganhua Lu; Junhong Chen

2008-01-01T23:59:59.000Z

312

Ambient condition laser writing of graphene structures on polycrystalline SiC thin film deposited on Si wafer  

SciTech Connect (OSTI)

We report laser induced local conversion of polycrystalline SiC thin-films grown on Si wafers into multi-layer graphene, a process compatible with the Si based microelectronic technologies. The conversion can be achieved using a 532 nm CW laser with as little as 10 mW power, yielding {approx}1 {mu}m graphene discs without any mask. The conversion conditions are found to vary with the crystallinity of the film. More interestingly, the internal structure of the graphene disc, probed by Raman imaging, can be tuned with varying the film and illumination parameters, resembling either the fundamental or doughnut mode of a laser beam.

Yue, Naili; Zhang, Yong; Tsu, Raphael [Department of Electrical and Computer Engineering and The Center for Optoelectronics and Optical Communications, The University of North Carolina at Charlotte, Charlotte, North Carolina 28223 (United States)] [Department of Electrical and Computer Engineering and The Center for Optoelectronics and Optical Communications, The University of North Carolina at Charlotte, Charlotte, North Carolina 28223 (United States)

2013-02-18T23:59:59.000Z

313

Sustainable Investments Capital SI Capital | Open Energy Information  

Open Energy Info (EERE)

SI Capital SI Capital Jump to: navigation, search Name Sustainable Investments Capital (SI Capital) Place Barcelona, Spain Zip 8021 Sector Renewable Energy, Services Product SI Capital is an independent financial institution set up to develop investment products and services for renewable energy and other sustainable projects. Coordinates 41.385589°, 2.168745° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.385589,"lon":2.168745,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

314

Defect formation mechanism during PECVD of a-Si:H  

SciTech Connect (OSTI)

Defect formation mechanism in a-Si:H during PECVD at substrate temperature below 250 C is considered to be breaking of weak bonds in the Urbach tail. To break weak bonds, an extra energy is necessary. This energy is supplied by the reaction energy of SiH{sub 3} precursor at the growing surface incorporating SiH{sub 2} into the network. The defect density is experimentally shown to be proportional to a product of the energy supply frequency, i.e., SiH{sub 2} density, and the weak bond density which is obtained by the Urbach energy. By analysis using the configurational coordinate diagram the energy level of the broken weak bond is determined to be 0.2 eV above the valence band mobility edge. There is similarity of the defect formation mechanism during deposition to that of the Staebler-Wronski effect.

Maeda, Keiji; Umezu, Ikurou

1997-07-01T23:59:59.000Z

315

Ge-on-Si laser for silicon photonics  

E-Print Network [OSTI]

Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (<1x109cm-2) and point defects Ge ...

Camacho-Aguilera, Rodolfo Ernesto

2013-01-01T23:59:59.000Z

316

Magnetic behaviour of synthetic Co2SiO4  

Science Journals Connector (OSTI)

The magnetic structure of the synthetic cobalt olivine, Co2SiO4, is determined by means of non-polarized and polarized neutron diffraction on single-crystal and powder samples.

Sazonov, A.

2009-11-16T23:59:59.000Z

317

Crystallization from high temperature solutions of Si in copper  

DOE Patents [OSTI]

A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 5X10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution melt of Si in Cu at about 16% to about 90% wt. Si at a temperature range of about 800.degree. C. to about 1400.degree. C. in an inert gas; immersing a substrate in the saturated solution melt; supersaturating the solution by lowering the temperature of the saturated solution melt and holding the substrate immersed in the solution melt for a period of time sufficient to cause growing Si to precipitate out of the solution to form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.

Ciszek, Theodore F. (Evergreen, CO)

1994-01-01T23:59:59.000Z

318

Major stable surface of silicon: Si(20 4 23)  

Science Journals Connector (OSTI)

Clean and well-annealed Si(515), (516), and (405) surfaces have been investigated by means of scanning tunnel microscope (STM) and low-energy electron diffraction and it turns out that these surfaces are unstable while Si(20 4 23) is stable, because the former three all consist of {20 4 23} facets. On the basis of the high-resolution dual-bias STM images of the Si(20?4?23)1×1 surface, a detailed structural model of the surface has been proposed for further investigation. As the unit cell of the Si(20 4 23) surface has its own structure rather than consisting of nanofacets of other stable surface(s) the surface is identified, by definition, as a major stable surface (or MAJOR). Interestingly, among all MAJOR’s of silicon that have been found so far (20 4 23) is the only one that silicon does not share with germanium.

Zheng Gai; R. G. Zhao; Wenjie Li; Y. Fujikawa; T. Sakurai; W. S. Yang

2001-09-04T23:59:59.000Z

319

Theoretical investigations of two Si-based spintronic materials  

SciTech Connect (OSTI)

Two Si-based spintronic materials, a Mn-Si digital ferromagnetic heterostructure ({delta}-layer of Mn doped in Si) with defects and dilutely doped Mn{sub x}Si{sub 1-x} alloy are investigated using a density-functional based approach. We model the heterostructure and alloy with a supercell of 64 atoms and examine several configurations of the Mn atoms. We find that 25% substitutional defects without vacancies in the {delta} layer diminishes half metallicity of the DFH substantially. For the alloy, the magnetic moment M ranges from 1.0-9.0 {mu}{sub B}/unit-cell depending on impurity configuration and concentration. Mn impurities introduce a narrow band of localized states near E{sub F}. These alloys are not half metals though their moments are integer. We explain the substantially different magnetic moments.

Fong, C Y; Snow, R; Shaughnessy, M; Pask, J E; Yang, L H

2007-08-03T23:59:59.000Z

320

Radiation hardness of si strip detectors with integrated coupling capacitors  

SciTech Connect (OSTI)

Si strip detectors with integrated coupling capacitors between diode and metallization and with separate bias resistors for each strip have been exposed to ionising radiation. Results from measurements of detector response before and after irradiation are presented.

Dijkstra, H.; Horisberger, R.; Hubbeling, L.; Maehlum, G.; Peisert, A.; Weilhammer, P.; Tuuva, T.; Evensen, L.

1989-02-01T23:59:59.000Z

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

EUV damage threshold measurements of Mo/Si multilayer mirrors  

Science Journals Connector (OSTI)

An EUV Schwarzschild objective consisting of two spherical, annular mirror substrates coated with Mo/Si multilayers (reflectivity...R?0.65@13.5 nm) provides high EUV fluences [13]. The incidence angles on the sam...

Matthias Müller; Frank Barkusky; Torsten Feigl; Klaus Mann

2012-08-01T23:59:59.000Z

322

Modeling of InGaN/Si tandem solar cells  

Science Journals Connector (OSTI)

We investigate theoretically the characteristics of monolithic InGaN/Si two-junction series-connected solar cells using the air mass 1.5 global irradiance spectrum. The addition of an InGaN junction is found to produce significant increases in the energy conversion efficiency of the solar cell over that of one-junction Si cells. Even when Si is not of high quality such two-junction cells could achieve efficiencies high enough to be practically feasible. We also show that further though smaller improvements of the efficiency can be achieved by adding another junction to form an InGaN/InGaN/Si three-junction cell.

L. Hsu; W. Walukiewicz

2008-01-01T23:59:59.000Z

323

In situ Study of the Formation of Silicide Phases in Amorphous Ni-Si Mixed Layers  

SciTech Connect (OSTI)

In this paper, we investigated Ni silicide phase formation when Si is added within an as deposited 50 nm Ni film. A series of 22 samples with a Si content varying from 0 to 50 at.% was prepared and systematically investigated with in situ x-ray diffraction. The inert oxide substrate was used to identify the phases which first crystallize in an amorphous Ni-Si mixture of a given concentration. The noncongruent silicides Ni{sub 3}Si and Ni{sub 3}Si{sub 2} are never observed to crystallize readily out of the mixture. A remarkable observation is the initial crystallization at low temperature of a hexagonal Ni-silicide, observed over a broad mixed layer composition [35-49%Si]; this hexagonal phase nucleates readily as a single phase [39-47%Si] or together with Ni{sub 2}Si [35-38%Si] or NiSi [49%Si]. This low-temperature phase is related to the high temperature {theta}-phase, but covers a wide composition range up to 47%Si. For the same Ni-Si films deposited on Si(100), the initial nucleation of the Ni(Si) mixture is similar as for the samples deposited on SiO{sub 2}, such that the complex sequence of metal-rich Ni-silicide phases typically observed during Ni/Si reactions is modified. For samples containing more than 21%Si, a simpler sequential phase formation was observed upon annealing. From pole figures, the phase formation sequence was observed to have a significant influence on the texture of the technologically relevant NiSi phase. For mixture composition ranging from 38% to 43%Si, the initial transient {theta}-phase appears extremely textured on Si(100). The observed transient appearance of a hexagonal phase is of importance in understanding the phase formation mechanisms in the Ni-Si system.

Van Bockstael, C.; Detavernier, C; Van Meirhaeghe, R; Jordan-Sweet, J; Lavoie, C

2009-01-01T23:59:59.000Z

324

Brush Type Stationary Phase with Si-O-CBonding in Gas Chromatography  

Science Journals Connector (OSTI)

......Folman, M., Yates, D. J. C., Trans. Far. Soc. 54...binger, U. and Grudel, C., Hely. Chem. Acta. 42, 1160 (1959). 13. Shapiro, J., Kolthoff, J. M...silica gel 16. Jones, D. C., Outridge, L., J. Chem......

István Halász; Imrich Sebestian

1974-04-01T23:59:59.000Z

325

Et si c'tait de la dissonance cognitive ?  

E-Print Network [OSTI]

EA 4272 Et si c'était de la dissonance cognitive ? Olivier Brunel (*) Céline Gallen (**) 2010 dissonance cognitive ? 27ème congrès international de l'Association Française de Marketing 18-20 Mai 2011,version1-17Dec2010 #12;2 Et si c'était de la dissonance cognitive ? Résumé Festinger propose en 1957 la

Paris-Sud XI, Université de

326

Magnetoresistance of p-Type Si in the Hopping Region  

Science Journals Connector (OSTI)

The magnetoresistance in the hopping region of B-doped Si was found to be negative. This contrasts with the behavior in n-type Ge, where a positive magnetoresistance is characteristic of the hopping conduction region. No anisotropy is observed in fields up to 17 kG in the p-type Si. The resistance tends to saturate at about 15 kG. The change in dc resistance at that field is about 10% from the zero-field value.

M. Pollak and D. H. Watt

1963-02-15T23:59:59.000Z

327

Detailed arsenic concentration profiles at Si/SiO2 interfaces  

SciTech Connect (OSTI)

The pile-up of arsenic at the Si/SiO2 interface after As implantation and annealing was investigated by high resolution Z-contrast imaging, electron energy-loss spectroscopy EELS, grazing incidence x-ray fluorescence spectroscopy GI-XRF, secondary ion mass spectrometry, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, as well as Hall mobility and four-point probe resistivity measurements. After properly taking into account their respective artifacts, the results of all methods are compatible with each other, with EELS and GI-XRF combined with etching providing similar spatial resolution on the nanometer scale for the dopant profile. The sheet concentration of the piled-up As at the interface was found to be 11015 cm 2 for an implanted dose of 11016 cm 2 with a maximum concentration of 10 at. %. The strain observed in the Z-contrast images also suggests a significant concentration of local distortions within 3 nm from the interface, which, however, do not seem to involve intrinsic point defects.

Pei, Lirong [ORNL; Duscher, G. [University of Tennessee, Knoxville (UTK) & Oak Ridge National Laboratory (ORNL); Steen, Christian [Chair of Electron Devices, University of Erlangen-Nuremberg, Cauerstrasse 6, 91058 Erlangen,; Pichler, Peter [Fraunhofer-Institute, Freiburg, Germany; Ryssel, Heiner [Fraunhofer Institute of Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen; Napolitani, Enrico [MATIS-CNR-INFM and Dipartimento di Fisica, Università di Padova, via Marzolo 8, 35141 Padova, Italy; De Salvador, Davide [MATIS-CNR-INFM and Dipartimento di Fisica, Università di Padova, via Marzolo 8, 35141 Padova, Italy; Piro, Alberto [MATIS-CNR-INFM and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64,; Terrasi, Antonio [MATIS-CNR-INFM and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64,

2008-01-01T23:59:59.000Z

328

Boron diffusion in nanocrystalline 3C-SiC  

SciTech Connect (OSTI)

The diffusion of boron in nanocrystalline silicon carbide (nc-SiC) films with a grain size of 4–7 nm is studied using a poly-Si boron source. Diffusion is found to be much faster than in monocrystalline SiC as it takes place within the grain boundary (GB) network. Drive-in temperatures of 900–1000°C are suitable for creating shallow boron profiles up to 100?nm deep, while 1100°C is sufficient to flood the 200?nm thick films with boron. From the resulting plateau at 1100?°C a boron segregation coefficient of 28 between nc-SiC and the Si substrate, as well as a GB boron solubility limit of 0.2?nm{sup ?2} is determined. GB diffusion in the bulk of the films is Fickian and thermally activated with D{sub GB}(T)=(3.1?5.6)×10{sup 7}exp(?5.03±0.16??eV/k{sub B}T) cm{sup 2}s{sup ?1}. The activation energy is interpreted in terms of a trapping mechanism at dangling bonds. Higher boron concentrations are present at the nc-SiC surface and are attributed to immobilized boron.

Schnabel, Manuel, E-mail: manuel.schnabel@ise.fraunhofer.de [Fraunhofer ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Department of Materials, University of Oxford, Parks Rd, Oxford OX1 3PH (United Kingdom); Weiss, Charlotte; Rachow, Thomas; Löper, Philipp; Janz, Stefan [Fraunhofer ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Canino, Mariaconcetta; Summonte, Caterina [CNR-IMM, Via Piero Gobetti 101, 40129 Bologna (Italy); Mirabella, Salvo [CNR-IMM MATIS, Via S. Sofia 64, 95123 Catania (Italy); Wilshaw, Peter R. [Department of Materials, University of Oxford, Parks Rd, Oxford OX1 3PH (United Kingdom)

2014-05-26T23:59:59.000Z

329

Methane Combustion over Pd/ZrO2/SiC, Pd/CeO2/SiC, Pd/Zr0.5Ce0.5O2/SiC Catalysts  

E-Print Network [OSTI]

1 Methane Combustion over Pd/ZrO2/SiC, Pd/CeO2/SiC, Pd/Zr0.5Ce0.5O2/SiC Catalysts Xiaoning Guo a Laboratory of Coal Conversion, Institute of Coal Chemistry, Taiyuan 030001, PR China b GREMI UMR6606 CNRS0.5O2 solid solution) modified Pd/SiC catalysts for methane combustion are studied. XRD and XPS

Paris-Sud XI, Université de

330

Mechanical characterization of Si-C(O) fiber/SiC (CVI) matrix composites with a BN-interphase  

SciTech Connect (OSTI)

The mechanical behavior of three CVI-processed 2D woven SiC/BN/SiC composite materials with different initial BN interphase thicknesses has been investigated by means of tensile and impact tests. The results have established the efficiency of a BN interphase in promoting a nonlinear/noncatastrophic tensile behavior and high impact resistance. The effect of the initial BN interphase thickness on the resulting mechanical behavior has also been demonstrated. AES and TEM has revealed the presence of a SiO[sub 2]/C double layer at the BN/fiber interface, which might result from a decomposition undergone by the Si-C(O) Nicalon fiber during processing. It has been suggested that the influence of the initial BN interphase thickness on the mechanical properties of the composites results from both changes occurring in the composition and morphology of the interfacial zones and modifications of the interfacial forces due to accommodation of the radial residual clamping stress.

Prouhet, S.; Camus, G.; Labrugere, C.; Guette, A. (Lab. des Composites Thermostructuraux, Pessac (France)); Martin, E. (Univ. de Bordeaux, Talence (France). Lab. de Genie Mechanique de l'IUT A)

1994-03-01T23:59:59.000Z

331

Structural and photovoltaic properties of a-Si (SNc)/c-Si heterojunction fabricated by EBPVD technique  

SciTech Connect (OSTI)

In last two decades sculptured thin films are very attractive for researches. Some properties of these thin films, like high porosity correspondingly high large surface area, controlled morphology; bring into prominence on them. Sculptured thin films have wide application areas as electronics, optics, mechanics, magnetic and chemistry. Slanted nano-columnar (SnC) thin films are a type of sculptured thin films. In this investigation SnC thin films were growth on n-type crystalline Si(100) and p-type crystalline Si(111) via ultra-high vacuum electron beam evaporation technique. The structural and morphological properties of the amorphous silicon thin films were investigated by XRD, Raman and FE-SEM analysis. According to the XRD and Raman analysis the structure of thin film was amorphous and FE-SEM analysis indicated slanted nano-columns were formed smoothly. Slanted nano-columns a-Si/c-Si heterojunction were prepared as using a photovoltaic device. In this regard we were researched photovoltaic properties of these heterojunction with current-voltage characterization under dark and illumination conditions. Electrical parameters were determined from the current-voltage characteristic in the dark conditions zero-bias barrier height ?{sub B0}?=?0.83?1.00eV; diode ideality factor ??=?11.71?10.73; series resistance R{sub s}?=?260?31.1 k? and shunt resistance R{sub sh}?=?25.71?63.5 M? SnC a-Si/n-Si and SnC a-Si/p-Si heterojunctions shows a pretty good photovoltaic behavior about 10{sup 3}- 10{sup 4} times. The obtained photovoltaic parameters are such as short circuit current density J{sub sc} 83-40 mA/m{sup 2}, open circuit voltage V{sub oc} 900-831 mV.

Demiro?lu, D.; Kazmanli, K.; Urgen, M. [Department of Metallurgical and Materials Engineering, Istanbul Technical University, Ayaza?a 34469, Istanbul (Turkey); Tatar, B. [Faculty of Arts and Sciences, Department of Physics, Nam?k Kemal University, De?irmenalt?, Tekirda? (Turkey)

2013-12-16T23:59:59.000Z

332

Formation of clean dimers during gas-source growth of Si(001) D.R.Bowler  

E-Print Network [OSTI]

-source growth of Si(001) using hydrogen-based precursors (such as SiH 4 , silane, and Si 2 H 6 , disilane observations of the growth of Si(001) from disilane, both at room temperature following anneals 1 dimers, with the aim of explaining how these form at a comparatively low temperature. Disilane (which

Bowler, David

333

Epitaxy of Nanocrystalline Silicon Carbide on Si(111) at Room Temperature  

E-Print Network [OSTI]

Epitaxy of Nanocrystalline Silicon Carbide on Si(111) at Room Temperature Roberto Verucchi carbide (SiC) has unique chemical, physical, and mechanical properties. A factor strongly limiting Si or plastics that cannot withstand high temperatures. Silicon carbide (SiC) has unique properties that make

Alfè, Dario

334

Effects of Silicon Carbide (SiC) Power Devices on HEV PWM Inverter Losses*  

E-Print Network [OSTI]

Effects of Silicon Carbide (SiC) Power Devices on HEV PWM Inverter Losses* Burak Ozpineci1,3 burak and Education Oak Ridge, TN 37831-0117 Abstract-The emergence of silicon carbide- (SiC-) based power, silicon carbide (SiC) with its superior properties compared with Si, is a good candidate to be used

Tolbert, Leon M.

335

E-Print Network 3.0 - al-low si transformation Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

-ICR Si NO C2H4 Si FT-ICR Si 6Tesla ICR ICR SWIFT (Stored Waveform Inversed Fourier Transform) Ar (1 10... FT-ICR Si NO C2H4 1. 2. 1 2 1,2 Chemical reaction of Silicon clusters...

336

Size, shape, and crystallinity of luminescent structures in oxidized Si nanoclusters and H-passivated porous Si  

SciTech Connect (OSTI)

Near-edge and extended x-ray absorption fine structure measurements from a wide variety of H-passivated porous Si samples and oxidized Si nanocrystals, combined with electron microscopy, ir-absorption, {alpha}-recoil, and luminescence emission data, provide a consistent structural picture of the species responsible for the luminescence observed in these systems. For luminescent porous Si samples peaking in the visible region, i. e., {le}700nm, their mass-weighted-average structures are determined here to be particles - not wires, whose short-range character is crystalline - not amorphous, and whose dimensions - typically <15 {angstrom} - are significantly smaller than previously reported or proposed. These results depend only on sample luminescence behavior, not on sample preparation details, and thus have general implications in describing the mechanism responsible for visible luminescence in porous silicon. New results are also presented which demonstrate that the observed luminescence is unrelated to either the photo-oxidized Si species in porous Si or the interfacial suboxide species in the Si nanocrystals.

Schuppler, S.; Marcus, M.A.; Xie, Y.H.; Harris, T.D.; Brown, W.L.; Chabal, Y.J.; Szajowski, P.J.; Friedman, S.L.; Adler, D.L. [AT& T Bell Labs., Murray Hill, NJ (United States); Ross, F.M. [Lawrence Berkeley Lab., CA (United States)] [and others

1994-11-01T23:59:59.000Z

337

Cu oxide nanowire array grown on Si-based SiO{sub 2} nanoscale islands via nanochannels  

SciTech Connect (OSTI)

Cu oxide nanowire array on Si-based SiO{sub 2} nanoscale islands was fabricated via nanochannels of Si-based porous anodic alumina (PAA) template at room temperature under a pulse voltage in a conventional solution for copper electrodeposition. X-ray diffraction and X-ray photoelectron spectroscopy showed that the main composite of the oxide nanowire is Cu{sub 2}O. The nanowires had a preferential growth direction (1 1 1) and connected with the nanoscale SiO{sub 2} islands, which was confirmed by Transmission Electron Microscopy (TEM). Such Si-based nanostructure is useful in the nanoelectrics application. The growth mechanism of Cu oxide nanowires in Si-based PAA template was discussed. The formation of Cu{sub 2}O is due to the alkalinity of the anodized solution. However, the oscillations of the potential and current during the experiment trend to bring on a small amount of copper and CuO in the nanowires.

Mei, Y.F. [Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong (China) and Department of Physics, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)]. E-mail: meiyongfeng@nju.org.cn; Siu, G.G. [Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong (China); Yang, Y. [Department of Physics, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Fu, Ricky K.Y. [Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong (China); Hung, T.F. [Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong (China); Chu, Paul K. [Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong (China); Wu, X.L. [Department of Physics, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)

2004-10-04T23:59:59.000Z

338

16 - Microcavities and quantum cascade laser structures based on silicon–germanium (SiGe) nanostructures  

Science Journals Connector (OSTI)

Abstract: This chapter discusses two types of Si-based light-emitting devices based on Ge quantum dots in optical microcavities and SiGe quantum cascade (QC) structures. After reviewing various solutions for Si-based light-emitting devices, the chapter describes the method to enhance light emission from Ge dots through embedding them into optical microcavities. It then reviews SiGe quantum cascade laser (QCL) structures on issues of material growth, electroluminescence from SiGe QC structures, n-type SiGe QC structures, and waveguides for SiGe QCLs.

J. Xia; Y. Shiraki; J. Yu

2011-01-01T23:59:59.000Z

339

Microsoft PowerPoint - 2013_08_20_DOE_Webinar_SiC_update.pptx  

Broader source: Energy.gov (indexed) [DOE]

SiC SiC f -SiC m Composite for f m BWR Channel Application Ken Yueh DOE NEET WEBINAR August 20, 2013 Research Objectives & Industry Value Objectives * Evaluate the feasibility of using SiC f -SiC Value * Stability of SiC in a reactor environment and Evaluate the feasibility of using SiC f SiC m composites as a nuclear fuel structural material - Thorough screening of design requirements against known properties Stability of SiC in a reactor environment and resistance to high temperature steam degradation offer revolutionary performance improvements - Eliminates BWR channel bow and requirements against known properties of SiC - Generate data/evaluate and disposition issues identified E l t t i l i t i d Eliminates BWR channel bow and improves safety system performance - High temperature steam oxidation rate a

340

Etching Efficiency for Si and SiO2 by CF+x, F+, and C+ Ion Beams Extracted from CF4 Plasmas  

Science Journals Connector (OSTI)

Fluorocarbon (CF+ x), fluorine (F+), and carbon (C+) ion beams with highcurrent density (50Si and SiO2surfaces to investigate the influence of the ion species on...

T. Yamaguchi; K. Sasaki; K. Kadota

2000-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

The incommensurate-commensurate phase transition in akermanite, Ca2MgSi2O7, observed by in-situ 29Si MAS NMR spectroscopy  

Science Journals Connector (OSTI)

29Si MAS NMR spectra of synthetic akermanite, Ca2MgSi2O7, exhibit a splitting into three or more lines in the stability feld of the low-temperature incommensurate phase. With increasing temperatu...

L. H. Merwin; A. Sebald; F. Seifert

1989-11-01T23:59:59.000Z

342

Capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator  

Science Journals Connector (OSTI)

We investigated the combined effect of the strained Si channel and hole confinement on the memory margin enhancement for a capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator (?-Si SGOI). The memory margin for the ?-Si SGOI capacitor-less memory cell was higher than that of the memory cell fabricated on an unstrained Si-on-insulator (SOI) and increased with increasing Ge concentration of the relaxed SiGe layer; i.e. the memory margin for the ?-Si SGOI capacitor-less memory cell (138.6 µA) at a 32 at% Ge concentration was 3.3 times higher than the SOI capacitor-less memory cell (43 µA).

Tae-Hyun Kim; Jea-Gun Park

2013-01-01T23:59:59.000Z

343

High-temperature phase stability and tribological properties of laser clad Mo{sub 2}Ni{sub 3}Si/NiSi metal silicide coatings  

SciTech Connect (OSTI)

Mo{sub 2}Ni{sub 3}Si/NiSi wear-resistant metal silicide composite coatings consisting of Mo{sub 2}Ni{sub 3}Si primary dendrite and interdendritic Mo{sub 2}Ni{sub 3}Si/NiSi eutectic were fabricated on substrate of an austenitic stainless steel AISI321 by laser cladding using Ni-Mo-Si elemental powder blends. The high-temperature structural stability of the coating was evaluated by aging at 800 deg. C for 1-50 h. High-temperature sliding wear resistance of the as-laser clad and aged coatings was evaluated at 600 deg. C. Results indicate that the Mo{sub 2}Ni{sub 3}Si/NiSi metal silicides coating has excellent high temperature phase stability. No phase transformation except the dissolution of the eutectic Mo{sub 2}Ni{sub 3}Si and the corresponding growth of the Mo{sub 2}Ni{sub 3}Si primary dendrite and no elemental diffusion from the coating into the substrate were detected after aging the coating at 800 deg. C for 50 h. Aging of the coating at 800 deg. C leads to gradual dissolution of the interdendritic eutectic Mo{sub 2}Ni{sub 3}Si and subsequent formation of a dual-phase structure with equiaxed Mo{sub 2}Ni{sub 3}Si primary grains distributed in the NiSi single-phase matrix. Because of the strong covalent-dominated atomic bonds and high volume fraction of the ternary metal silicide Mo{sub 2}Ni{sub 3}Si, both the original and the aged Mo{sub 2}Ni{sub 3}Si/NiSi coating has excellent wear resistance under pin-on-disc high-temperature sliding wear test conditions, although hardness of the aged coating is slightly lower than that of the as-clad coating.

Lu, X.D. [Laboratory of Laser Materials Processing and Surface Engineering, School of Materials Science and Engineering, Beihang University (China); Wang, H.M. [Laboratory of Laser Materials Processing and Surface Engineering, School of Materials Science and Engineering, Beihang University (China)]. E-mail: wanghuaming@263.net

2004-10-18T23:59:59.000Z

344

La France et l'Iran, des nations si lointaines et si proches 197 La France et l'Iran, des nations  

E-Print Network [OSTI]

La France et l'Iran, des nations si lointaines et si proches 197 La France et l'Iran, des nations si lointaines et si proches Le recteur Gérard-François DUMONT* La France et l'Iran apparaissent comme'autre. Pour les Français, comme sans doute pour les autres Européens, penser ce pays asiatique qu'est l'Iran

Paris-Sud XI, Université de

345

Epstein-Barr virus immediate-early gene product trans-activates gene expression from the human immunodeficiency virus long terminal repeat  

SciTech Connect (OSTI)

Acquired immunodeficiency syndrome patients are frequently coinfected with Epstein-Barr virus (EBV). In this report, the authors demonstrate that an EBV immediate-early gene product, BamHI MLF1, stimulates expression of the bacterial chloramphenicol acetyltransferase (CAT) gene linked to the human immunodeficiency virus (HIV) promoter. The HIV promoter sequences necessary for trans-activation by EBV do not include the tat-responsive sequences. In addition, in contrast to the other herpesvirus trans-activators previously studied, the EBV BamHI MLF1 gene product appears to function in part by a posttranscriptional mechanism, since it increases pHIV-CAT protein activity more than it increases HIV-CAT mRNA. This ability of an EBV gene product to activate HIV gene expression may have biologic consequences in persons coinfected with both viruses.

Kenney, S.; Kamine, J.; Markovitz, D.; Fenrick, R.; Pagano, J.

1988-03-01T23:59:59.000Z

346

DC-SIGN mediates avian H5N1 influenza virus infection in cis and in trans  

SciTech Connect (OSTI)

DC-SIGN, a C-type lectin receptor expressed in dendritic cells (DCs), has been identified as a receptor for human immunodeficiency virus type 1, hepatitis C virus, Ebola virus, cytomegalovirus, dengue virus, and the SARS coronavirus. We used H5N1 pseudotyped and reverse-genetics (RG) virus particles to study their ability to bind with DC-SIGN. Electronic microscopy and functional assay results indicate that pseudotyped viruses containing both HA and NA proteins express hemagglutination and are capable of infecting cells expressing {alpha}-2,3-linked sialic acid receptors. Results from a capture assay show that DC-SIGN-expressing cells (including B-THP-1/DC-SIGN and T-THP-1/DC-SIGN) and peripheral blood dendritic cells are capable of transferring H5N1 pseudotyped and RG virus particles to target cells; this action can be blocked by anti-DC-SIGN monoclonal antibodies. In summary, (a) DC-SIGN acts as a capture or attachment molecule for avian H5N1 virus, and (b) DC-SIGN mediates infections in cis and in trans.

Wang, S.-F.; Huang, Jason C. [Department of Biotechnology and Laboratory Science in Medicine, School of Medicine, National Yang-Ming University, Taipei 112, Taiwan (China); AIDS Prevention and Research Center, School of Medicine, National Yang-Ming University, Taipei 112, Taiwan (China); Lee, Y.-M. [Division of Preventive Medicine, Institute of Public Health, School of Medicine, National Yang-Ming University, Taipei 112, Taiwan (China); Division of Clinical Virology, Department of Pathology and Laboratory Medicine, Taipei Veterans General Hospital, Taipei, Taiwan (China); Liu, S.-J. [Vaccine Research and Development Center, National Health Research Institutes, Taiwan (China); Chan, Yu-Jiun [Division of Preventive Medicine, Institute of Public Health, School of Medicine, National Yang-Ming University, Taipei 112, Taiwan (China); Division of Clinical Virology, Department of Pathology and Laboratory Medicine, Taipei Veterans General Hospital, Taipei, Taiwan (China); Division of Infectious Diseases, Department of Medicine, Taipei Veterans General Hospital, Taipei, Taiwan (China); Chau, Y.-P. [Institute of Anatomy and Cell Biology, School of Medicine, National Yang-Ming University, Taipei 112, Taiwan (China); Chong, P. [Vaccine Research and Development Center, National Health Research Institutes, Taiwan (China); Chen, Y.-M.A. [AIDS Prevention and Research Center, School of Medicine, National Yang-Ming University, Taipei 112, Taiwan (China) and Division of Preventive Medicine, Institute of Public Health, School of Medicine, National Yang-Ming University, Taipei 112, Taiwan (China); Department of Microbiology, School of Medicine, National Yang-Ming University, AIDS Prevention and Research Center, No. 155, Linong Street, Section 2, Taipei 112, Taiwan (China)], E-mail: arthur@ym.edu.tw

2008-09-05T23:59:59.000Z

347

Dynamic Evolution of an X-shaped Structure above a Trans-equatorial Quadrupole Solar Active Region Group  

E-Print Network [OSTI]

In the solar corona, magnetic reconnection usually takes place at the singular configuration of magnetic field, in particular near a magnetic null owing to its high susceptibility to perturbations. In this Letter, we report a rare X-shaped structure, encompassing a magnetic null, above a trans-equatorial quadrupole active region group that is well observed by the Atmospheric Imaging Assembly (AIA). The observations show that this X-shaped structure is visible in all AIA EUV passbands and stably exists for days. However, possibly induced by flare activities at the northern part of the quadrupole active region group, the X-shaped structure starts to destabilize and meanwhile a jet erupted near its center at 15:05 UT on 2013 October 7. Through the non-linear force-free field modeling, we identify a magnetic null, which is above the quadrupole polarities and well corresponds to the X-shaped structure. After the jet eruption, the temperature and emission measure of the plasma near the X-shaped structure rise from ...

Sun, J Q; Guo, Y; Ding, M D; Li, Y

2014-01-01T23:59:59.000Z

348

Growth-induced magnetic anisotropy and clustering in vapor-deposited Co-Pt alloy films A. L. Shapiro, P. W. Rooney, M. Q. Tran, and F. Hellman  

E-Print Network [OSTI]

. Shapiro, P. W. Rooney, M. Q. Tran, and F. Hellman Department of Physics, University of California to 800 °C. Films grown at moderate temperatures 200­400 °C exhibit remarkable growth-induced properties chemical order develops, such that below 800 °C, near the Co0.50Pt0.50 composition, CoxPt1 x exhibits Cu

Hellman, Frances

349

Stereoselective synthesis of trans-olefins by the copper-mediated SN2? reaction of vinyl oxazines with Grignard reagents. Asymmetric synthesis of d-threo-sphingosines  

Science Journals Connector (OSTI)

The SN2? reaction of 6-vinyl-5,6-dihydro-4H-[1,3]oxazines with Grignard reagents in the presence of CuCN was studied, and high trans selectivity for the formation of double bond was observed with a variety of RMgX. The SN2? reaction, coupled with regioselective asymmetric aminohydroxylation reaction, provided a highly efficient route for the asymmetric synthesis of d-threo-N-acetylsphingosine.

Om V. Singh; Hyunsoo Han

2007-01-01T23:59:59.000Z

350

Si–H and Si–C Bond Cleavage Reactions of Silane and Phenylsilanes with Mo(PMe3)6: Silyl, Hypervalent Silyl, Silane, and Disilane Complexes  

Science Journals Connector (OSTI)

Si–H and Si–C Bond Cleavage Reactions of Silane and Phenylsilanes with Mo(PMe3)6: Silyl, Hypervalent Silyl, Silane, and Disilane Complexes ... Mo(PMe3)6 cleaves the Si–H bonds of SiH4, PhSiH3, and Ph2SiH2 to afford a variety of novel silyl, hypervalent silyl, silane, and disilane complexes, as respectively illustrated by Mo(PMe3)4(SiH3)2H2, Mo(PMe3)4(?2-H2-H2SiPh2H)H, Mo(PMe3)3(?-HSiHPh2)H4, and Mo(PMe3)3(?2-H2-H2Si2Ph4)H2. ... Mo(PMe3)4(?2-H2-H2SiPh2H)H and Mo(PMe3)3(?2-H2-H2Si2Ph4)H2 are respectively the first examples of complexes that feature a hypervalent ?2-H2-H2SiPh2H silyl ligand and a chelating disilane ligand, and both compounds convert to the diphenylsilane adduct, Mo(PMe3)3(?-HSiHPh2)H4, in the presence of H2. ...

Ashley A. Zuzek; Gerard Parkin

2014-05-30T23:59:59.000Z

351

Predicting Static Losses in an Inverter-Leg built with SiC Normally-Off JFETs and SiC diodes  

E-Print Network [OSTI]

Predicting Static Losses in an Inverter-Leg built with SiC Normally-Off JFETs and SiC diodes Xavier details the methodology of a method to calculate static losses in an inverter leg built with SiC Normally model with a constant current. The proposed method is applied to a three phase inverter to evaluate

Paris-Sud XI, Université de

352

Strained-Si1-xGex/Si Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior  

E-Print Network [OSTI]

Strained pseudomorphic Si/Si [subscript 1-x]Ge [subscript x]/Si gate-controlled band-to-band tunneling (BTBT) devices have been analyzed with varying Ge composition up to 57% and p+ tunnel-junction (source) doping concentration ...

Antoniadis, Dimitri A.

353

On the Al-Si, Al-Ge, and Al-Ge-Si systems and their application to brazing in high power semiconductor devices  

Science Journals Connector (OSTI)

Results of the Smith thermal analysis studies13 of the Al-Si, Al-Ge, and Al-Ge-Si systems are presented and compared with ... . Isothermal and vertical sections for the Al-Ge-Si system, computed from thermodynami...

F. H. Hayes; R. D. Longbottom; E. Ahmad; G. Chen

1993-08-01T23:59:59.000Z

354

Temperature-dependent nanocrystal formation in Mo/Si multilayers  

SciTech Connect (OSTI)

We investigated the nanocrystallinity of Mo/Si multilayers as a function of the Mo:Si ratio in the period using grazing incidence and wide angle x-ray diffraction, both for as-deposited samples and after thermal annealing up to 800 deg. C under UHV conditions. The research was performed on multilayers, as applied for extreme UV lithography with period thickness of approximately 7 nm. The as-deposited multilayer nanostructure was found to depend on the Mo to Si layer thickness ratio. For intermediate Mo fractions in the multilayer period, a four layer system is formed, with amorphous Si and polycrystalline Mo layers separated by silicide interfaces, while for low and high Mo fractions, a two component system is formed, respectively, consisting of a pure Mo layer (in the case of a high Mo fraction) or pure Si layer (low Mo fraction) separated by a single silicide interface. Using the crystallographic properties of the multilayer during annealing, we describe the continuous development of the multilayer structure and growth of the silicide interfaces. Our study has led to an explanatory model which is based on the total free energy minimization of the multilayer system. Finally, a phase transition to a crystalline silicide is observed at T>300 deg. C. This phase transition can also be explained by minimization of the total free energy.

Nedelcu, I.; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F. [FOM-Institute for Plasma Physics Rijnhuizen, P.O. Box. 1207, 3430 BE Nieuwegein (Netherlands)

2007-12-15T23:59:59.000Z

355

A discrete element 3' of human immunodeficiency virus 1 (HIV-1) and HIV-2 mRNA initiation sites mediates transcriptional activation by an HIV trans activator  

SciTech Connect (OSTI)

An important point of regulation in the reproductive growth and latency of the human and simian immunodeficiency viruses (HIV and SIV, respectively) is provided by virally encoded trans-activators (tat), proteins capable of dramatically increasing viral gene expression. The mechanism of this autostimulatory pathway has remained unclear, however, with substantial effects having been reported at the level of either mRNA accumulation, translational efficiency, or both. The authors' previous findings indicated that trans-activation results primarily from induction of RNA levels but could not distinguish between the roles of transcriptional rate, RNA stabilization, and RNA transport in this event. In addition, the boundaries of tat-responding elements, which would be valuable in elucidating the mode of tat action, are not precisely known. In this study, HIV-1 and HIV-2 long terminal repeat-directed expression was characterized by using in an vitro nuclear transcription assay to clarify this mechanism, and a detailed mutational analysis was undertaken to localize precisely the sequences participating in this process. Two key findings were revealed: an increased transcription rate was the primary event in tat-mediated activation of HIV-1 and HIV-2, and trans-activation was impaired by mutations in two regions, the TATA box and sequences between +19 to +42, a region lacking enhancer activity. These results implicate a discrete 3' regulatory element in the transcriptional activation of the HIVs.

Jakobovits, A.; Smith, D.H.; Jakobovits, E.B.; Capon, D.J.

1988-06-01T23:59:59.000Z

356

Buckeye Silicon BeSi | Open Energy Information  

Open Energy Info (EERE)

Silicon BeSi Silicon BeSi Jump to: navigation, search Name Buckeye Silicon (BeSi) Place Toledo, Ohio Product Ohio-based polysilicon startup focusing on modular production. Coordinates 46.440613°, -122.847838° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":46.440613,"lon":-122.847838,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

357

SiEnergy Systems LLC | Open Energy Information  

Open Energy Info (EERE)

SiEnergy Systems LLC SiEnergy Systems LLC Jump to: navigation, search Name SiEnergy Systems LLC Place Quincy, Massachusetts Zip 2169 Product Harvard University spin-off commercialising solid oxide fuel cell technology first developed at Harvard's School of Engineering and Applied Sciences. Coordinates 47.237515°, -119.853309° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":47.237515,"lon":-119.853309,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

358

Hydrogen populations in PECVD a-Si:H,D  

SciTech Connect (OSTI)

Proton NMR and deuteron NMR (DMR) have been used to measure hydrogen populations in a series of PECVD a-Si:H,D films. The sharp DMR doublet from Si-D is fitted and subtracted out. The residual spectra then show specific signatures for molecular D{sub 2} and HD. The fitting procedures yield quantitative measures of Si-bonded and molecular species. A particular comparison is made between a pair of films prepared as the powered and unpowered electrodes in the same plasma deposition. Both silicon-bonded and molecular populations are significantly different in the two films and correlate with photoresponse products {eta}{mu}{tau} and with IR as well as other materials characterizations.

Cull, T.S.; Kernan, M.J.; Chan, P.H.; Fedders, P.A.; Leopold, D.J.; Norberg, R.E.; Wickboldt, P.; Paul, W.

1997-07-01T23:59:59.000Z

359

The precipitation sequence in Al-Mg-Si alloys  

SciTech Connect (OSTI)

Fine-scale precipitation that occurs during age hardening of Al alloy 6061 has been studied using differential scanning calorimetry (DSC), atom probe field ion microscopy (APFIM) and transmission electron microscopy (TEM). It was found that the precipitation sequence is: independent clusters of Mg and Si atoms {yields} co-clusters that contain Mg and Si atoms {yields} small precipitates of unknown structure {yields} {beta}{double_prime} needle-shaped precipitates {yields} B{prime} lath-shaped precipitates and {beta}{prime} rod-shaped precipitates. A new structure is proposed for the {beta}{double_prime} precipitate. It was found that the Mg:Si ratio in the intermediate precipitates and co-clusters was close to 1:1.

Edwards, G.A.; Dunlop, G.L. [Univ. of Queensland, Brisbane, Queensland (Australia)] [Univ. of Queensland, Brisbane, Queensland (Australia); Stiller, K. [Chalmers Univ. of Technology, Gothenburg (Sweden)] [Chalmers Univ. of Technology, Gothenburg (Sweden); Couper, M.J. [Comalco Research Centre, Thomastown, Victoria (Australia)] [Comalco Research Centre, Thomastown, Victoria (Australia)

1998-07-01T23:59:59.000Z

360

Silicon (100)/SiO2 by XPS  

SciTech Connect (OSTI)

Silicon (100) wafers are ubiquitous in microfabrication and, accordingly, their surface characteristics are important. Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al K radiation. Survey scans show that the material is primarily silicon and oxygen, and the Si 2p region shows two peaks that correspond to elemental silicon and silicon dioxide. Using these peaks the thickness of the native oxide (SiO2) was estimated using the equation of Strohmeier.1 The oxygen peak is symmetric. The material shows small amounts of carbon, fluorine, and nitrogen contamination. These silicon wafers are used as the base material for subsequent growth of templated carbon nanotubes.

Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

2013-09-25T23:59:59.000Z

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Unraveling siRNA Unzipping Kinetics with Graphene  

E-Print Network [OSTI]

Using all atom molecular dynamics simulations, we report spontaneous unzipping and strong binding of small interfering RNA (siRNA) on graphene. Our dispersion corrected density functional theory based calculations suggest that nucleosides of RNA have stronger attractive interactions with graphene as compared to DNA residues. These stronger interactions force the double stranded siRNA to spontaneously unzip and bind to the graphene surface. Unzipping always nucleates at one end of the siRNA and propagates to the other end after few base-pairs get unzipped. While both the ends get unzipped, the middle part remains in double stranded form because of torsional constraint. Unzipping probability distributions fitted to single exponential function give unzipping time (t) of the order of few nanoseconds which decrease exponentially with temperature. From the temperature variation of unzipping time we estimate the energy barrier to unzipping.

Santosh Mogurampelly; Swati Panigrahi; Dhananjay Bhattacharyya; A. K. Sood; Prabal K. Maiti

2012-07-19T23:59:59.000Z

362

Joining SI3N4 for Advanced Turbomachinery Applications  

SciTech Connect (OSTI)

The main objective of this project was to develop reliable, low-cost techniques for joining silicon nitride (Si{sub 3}N{sub 4}) to itself and to metals. For Si{sub 3}N{sub 4} to be widely used in advanced turbomachinery applications, joining techniques must be developed that are reliable, cost-effective, and manufacturable. This project addressed those needs by developing and testing two Si{sub 3}N{sub 4} joining systems; oxynitride glass joining materials and high temperature braze alloys. Extensive measurements were also made of the mechanical properties and oxidation resistance of the braze materials. Finite element models were used to predict the magnitudes and positions of the stresses in the ceramic regions of ceramic-to-metal joints sleeve and butt joints, similar to the geometries used for stator assemblies.

GLASS, S. JILL; LOEHMAN, RONALD E.; HOSKING, F. MICHAEL; STEPHENS JR., JOHN J.; VIANCO, PAUL T.; NEILSEN, MICHAEL K.; WALKER, CHARLES A.; POLLINGER, J.P.; MAHONEY, F.M.; QUILLEN, B.G.

2000-07-01T23:59:59.000Z

363

SiC Processing AG | Open Energy Information  

Open Energy Info (EERE)

SiC Processing AG SiC Processing AG Jump to: navigation, search Name SiC Processing AG Place Hirschau, Germany Zip 92242 Sector Solar Product Offers management and recycling of slurry for solar and semiconductor industries. Coordinates 49.542793°, 11.943304° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":49.542793,"lon":11.943304,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

364

Sb lattice diffusion in Si1-xGex/Si(001) heterostructures:?Chemical and stress effects  

Science Journals Connector (OSTI)

The Sb diffusion coefficient in Si1-xGex/Si1-yGey(001) heterostructures grown by molecular beam epitaxy (MBE) was measured for temperatures ranging from 700 to 850 °C, Ge composition from 0 to 20 % and biaxial pressure from -0.8 (tension) to 1.4 GPa (compression). A quantitative separation of composition and biaxial stress effects is made. We show that the Sb lattice diffusion coefficient: (i) increases with Ge concentration in relaxed layers or at constant biaxial pressure and (ii) increases with compressive biaxial stress and decreases with tensile biaxial stress at constant Ge composition. The enhancement of Sb lattice diffusion in Si1-xGex layers in epitaxy on Si(001) is thus due to the cooperative effect of Ge composition and induced compressive biaxial stress. However, the first effect (composition) is predominant. The activation volume of Sb diffusion in Si1-xGex layers is deduced from the variation of the Sb diffusion coefficients with biaxial pressure. This volume is negative. The sign of the activation volume, its absolute value and its variation with temperature confirm the prediction of the thermodynamic model proposed by Aziz, namely, that under a biaxial stress the activation volume is reduced to the relaxation volume.

A. Portavoce; P. Gas; I. Berbezier; A. Ronda; J. S. Christensen; A. Yu. Kuznetsov; B. G. Svensson

2004-04-15T23:59:59.000Z

365

Modeling of implantation and mixing damage during etching of SiO{sub 2} over Si in fluorocarbon plasmas  

SciTech Connect (OSTI)

Energetic ion bombardment during plasma etching of microelectronics devices is necessary to activate chemical process and define features through the ions' anisotropic trajectories. These energetic fluxes can also cause damage and mixing of the constituents of crystalline lattices. These properties are likely best modeled using molecular dynamics (MD) simulations. The computational expense of these techniques makes feature scale simulations difficult, and so motivates development of approximate methods that can be used to model full features. In this regard, an implantation and mixing model has been developed and implemented into a Monte Carlo feature profile model to simulate the mixing and damage to the underlying Si during high aspect ratio (HAR) etching of SiO{sub 2} trenches. Fluxes to the surface were provided by a reactor scale model. The feature scale model was validated by comparison to the mixing produced by Ar{sup +} bombardment of Si with and without F and CF fluxes as predicted by MD simulations. Scaling of mixing damage of underlying Si during HAR of SiO{sub 2} etching in Ar/C{sub 4}F{sub 8}/O{sub 2} plasmas for rf bias powers of 1-4 kW was investigated. The authors found that mixing damage at the bottom of HAR features, though increasing in magnitude with increasing ion energy, does not scale as dramatically as on flat surfaces. This is due to the reflection of ions off of sidewalls which moderate the ion energies.

Wang Mingmei; Kushner, Mark J. [Department of Chemical and Biological Engineering, Iowa State University, Ames, Iowa 50010 (United States); Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

2011-09-15T23:59:59.000Z

366

An ultra-thin buffer layer for Ge epitaxial layers on Si  

SciTech Connect (OSTI)

Using an Fe{sub 3}Si insertion layer, we study epitaxial growth of Ge layers on a Si substrate by a low-temperature molecular beam epitaxy technique. When we insert only a 10-nm-thick Fe{sub 3}Si layer in between Si and Ge, epitaxial Ge layers can be obtained on Si. The detailed structural characterizations reveal that a large lattice mismatch of {approx}4% is completely relaxed in the Fe{sub 3}Si layer. This means that the Fe{sub 3}Si layers can become ultra-thin buffer layers for Ge on Si. This method will give a way to realize a universal buffer layer for Ge, GaAs, and related devices on a Si platform.

Kawano, M.; Yamada, S.; Tanikawa, K.; Miyao, M.; Hamaya, K. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)] [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Sawano, K. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)] [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)

2013-03-25T23:59:59.000Z

367

Structure of the Si(100)-(2×2)In surface  

Science Journals Connector (OSTI)

The question of whether the Si(100)-(2×2)In reconstruction consists of orthogonal or parallel In ad-dimers was answered by performing studies, using scanning tunneling microscopy and impact-collision ion-scattering spectrometry (ICISS), on low coverages of In adsorbed on a vicinal Si(100) surface. The formation of a predominantly single domain of the (2×2) phase on the vicinal surface allowed us to use the ICISS experiments to distinguish between the orthogonal and parallel ad-dimer geometries. Our results strongly support the model involving the parallel ad-dimer, in agreement with previous theoretical predictions.

B. E. Steele; Lian Li; J. L. Stevens; I. S. T. Tsong

1993-04-15T23:59:59.000Z

368

Lattice site investigation of F in preamorphized Si  

Science Journals Connector (OSTI)

The lattice location of F atoms in Si was experimentally studied. Si single crystals were amorphized, implanted with F, and afterwards the amorphous layer was recrystallized. Some of the samples prepared in this way were also annealed at 750°C for 60min. The F19(p,??)O16 resonant nuclear reaction at 340.5keV was employed to measure the probability of a close encounter between protons and F nuclei as a function of the incident angle with respect to six major crystalline directions. The predictions of several ab initio calculations proved to be incompatible with the present experimental findings.

F. Bernardi; J. H. R. dos Santos; M. Behar; A. Kling

2007-07-05T23:59:59.000Z

369

Airflow induced vibration of the Si-IT prototype  

E-Print Network [OSTI]

In this note we present the results of air-flow induced vibration tests performed on mechanical prototypes of the Si option of the Inner Tracker upgrade. We made a modal analyze where we observed the eigenfrequency of the Si-ladder structure at ?30 Hz as previously measured at CERN. Flowing dry-air to cool the prototypes we do not observe a lock-in state of the vortex induced vibration (VIV). The maximum observed vibration amplitude is calculated. We conclude that the VIV excites the eigenfrequency almost independently from the air-flow speed, and with an amplitude which does not damage the structure.

Dijkstra, H; De Aguiar, V; Rigo, V

2014-01-01T23:59:59.000Z

370

Photoinduced Effects in UV Laser Melting of Si in UHV  

Science Journals Connector (OSTI)

The dynamics of laser heating and melting of Si in UHV is investigated by transient reflectivity with single pulse sensitivity. It is found that the heating and melting dynamics cannot be accounted for by a model of heat flow using the thermal and optical properties of Si. Experiment and theory can be reconciled assuming significantly smaller thermal conductivity and heat capacity at all temperatures from ambient to melting. The melting temperature is also smaller. It is suggested that these specific parameters are related to the photoinduced plasma.

Bogdan Dragnea and Bernard Bourguignon

1999-04-12T23:59:59.000Z

371

Giant Quadrupole and Monopole Resonances in Si-28  

E-Print Network [OSTI]

combination of 31 GIANT QUADRUPOLE AND MONOPOLE RESONANCES IN 28Si 1645 O LLI 0- 28Si (a, a') Ea = l29 MeV ~c.m.= & & 8 = 0 0'----c.m. A~& I I I I I I rg I ~'LI 4gt I I I I I I I ~ I , I I I I I g IE4 I j ~ ~I I ~I ~ 1 ILJ...PHYSICAL REVIE%' C VOLUME 31, NUMBER 5 Giant quadrupole and monopole resonances in assi MAY 1985 Y.-W. Lui, J. D. Bronson, D. H. Youngblood, and Y. Toba Cyclotron Institute, Texas A&M University, College Station, Texas 77843 U. Garg* Physics...

Lui, YW; Bronson, J. D.; Youngblood, David H.; Toba, Y.; Garg, U.

1985-01-01T23:59:59.000Z

372

Structure of rings in vitreous SiO2  

Science Journals Connector (OSTI)

The structure of n-fold rings in vitreous SiO2 is investigated using molecular-dynamics configurations. A recently developed interaction potential for SiO2 consisting of long-range Coulomb interactions, the effect of electronic polarizability, and three-body covalent forces is used in the molecular-dynamics study of the vitreous state. Results for the statistics of rings and distribution of interatomic distances and bond angles in the rings are presented for the vitreous state. The statistics of rings for the molten state is also discussed.

José P. Rino; Ingvar Ebbsjö; Rajiv K. Kalia; Aiichiro Nakano; Priya Vashishta

1993-02-01T23:59:59.000Z

373

Heteroepitaxial Ge-on-Si by DC magnetron sputtering  

SciTech Connect (OSTI)

The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany)] [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany); Patzig, Christian; Berthold, Lutz; Höche, Thomas [Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Straße 1, 06120 Halle (Germany)] [Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Straße 1, 06120 Halle (Germany); Tünnermann, Andreas [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany) [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany); Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena (Germany)

2013-07-15T23:59:59.000Z

374

Growth of microcrystalline Si:H and (Si,Ge):H on polyamide substrates using ECR deposition techniques  

SciTech Connect (OSTI)

The authors report on the growth of good quality micro-crystalline Si:H and (Si,Ge):H films on polyamide substrates using a remote plasma ECR deposition technique. They find that under conditions that lead to significant ion bombardment of the substrate, the films are microcrystalline even at relatively low deposition temperatures of about 250 C. A critical factor in inducing microcrystallinity is the presence of a metal coating layer on polyamide. In the absence of such a coating, the films are amorphous, probably because the uncoated polyamide substrate charges up and prevents any further ion bombardment. The quality of the films was measured using both Raman spectroscopy and by studying the activation energy and low-energy absorption coefficient of the films. The sub-gap absorption coefficient was found to follow the crystalline Si absorption curve quite well. The addition of germane to the gas phase shifted the absorption curve to smaller energies.

Erickson, K.; Dalal, V.L.; Chumanov, G.

1997-07-01T23:59:59.000Z

375

Reactive ion beam etching of silicon with a new plasma ion source operated with CF4 : SiO2 over Si selectivity and Si surface modification  

E-Print Network [OSTI]

295 Reactive ion beam etching of silicon with a new plasma ion source operated with CF4 : SiO2 over-SIRE - alimenté en gaz CF4 pur. Ils concernent la silice et le silicium monocristallin et démontrent que les actuels sous plasmas CHF3 ou CF4/H2, pour lesquels les dommages induits par l'hydrogène sont bien connus

Paris-Sud XI, Université de

376

Lithium diffusion at Si-C interfaces in Silicon-Graphene composites  

SciTech Connect (OSTI)

Models of intercalated Li and its diffusion in Si-Graphene interfaces are investigated using Density Functional Theory. Results suggest that the presence of interfaces alters the energetics of Li binding and diffusion significantly compared to bare Si or Graphene surfaces. Our results show that cavities along reconstructed Si surface provide diffusion paths for Li. Diffusion barriers calculated along these cavities are significantly lower than penetration barriers to bulk Si. Interaction with Si surface results in graphene defects, creating Li diffusion paths that are confined along the cavities but have still lower barrier than in bulk Si.

Odbadrakh, Khorgolkhuu [ORNL; McNutt, Nichiolas William [University of Tennessee, Knoxville (UTK); Nicholson, Donald M. [Oak Ridge National Laboratory (ORNL); Rios, Orlando [ORNL; Keffer, David J. [University of Tennessee, Knoxville (UTK)

2014-01-01T23:59:59.000Z

377

Growth of crystalline X-Sic on Si at reduced temperatures by chemical vapor deposition from `silacycllobutane  

E-Print Network [OSTI]

, and TPS resulted in single crystal layer" on Si ( 111) only up to a thickness of 2000 h;. Highly orientedGrowth of crystalline X-Sic on Si at reduced temperatures by chemical vapor deposition from grown by SCB at a temperature of 800 "C. The progress of SiC/Si heterojunction devices has been C3HsSiH2

Steckl, Andrew J.

378

Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous SiO2 Zhong-Yi Lu,1  

E-Print Network [OSTI]

Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous SiO2 Zhong-Yi Lu,1 C. J vacancies in SiO2 have long been regarded as bistable, forming a Si-Si dimer when neutral and a puckered configuration when positively charged. We report first-principles calculations of O vacancies in amorphous SiO2

Pantelides, Sokrates T.

379

Role of oxygen vacancy in HfO{sub 2}/SiO{sub 2}/Si(100) interfaces  

SciTech Connect (OSTI)

We have investigated the interface states in HfO{sub 2}/SiO{sub 2}/Si(100) systems that were prepared by using the in situ pulsed laser deposition technique. X-ray photoelectron spectroscopy data revealed that when the HfO{sub 2} film thickness exceeds 11 A, the film composition undergoes a systematic change from Hf silicate to oxygen-deficient HfO{sub x<2}. Furthermore, we determined that the evolution of the interface states clearly depends on the oxygen condition applied during the film growth and that the oxygen vacancy is an important parameter for Hf silicate formation.

Cho, Deok-Yong; Oh, S.-J.; Chang, Y.J.; Noh, T.W.; Jung, Ranju; Lee, Jae-Cheol [CSCMR and School of Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); ReCOE and School of Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); Samsung Advanced Institute of Technology, Suwon 440-900 (Korea, Republic of)

2006-05-08T23:59:59.000Z

380

Monte Carlo Simulations of Thermal Conductivity in Nanoporous Si Membranes  

E-Print Network [OSTI]

candidates for thermoelectric materials as they can provide extremely low thermal conductivity , relatively of boundary scattering on the thermal conductivity. We show that the material porosity strongly affects1 Monte Carlo Simulations of Thermal Conductivity in Nanoporous Si Membranes Stefanie Wolf1

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Current and Resistance SI unit for current is ampere  

E-Print Network [OSTI]

Conversely speak of a material's conductivity, SI unit is (�m)-1 J E = 1 = #12;Resistance and Resistivity E , J , and when talk about electrical properties of materials #12;Resistivity of Materials Resistivities for some common materials (at room temperature) Metal (Copper) Semi-conductor (Silicon) (n

Bertulani, Carlos A. - Department of Physics and Astronomy, Texas A&M University

382

Superconductivity in gallium-substituted Ba8Si46 clathrates  

E-Print Network [OSTI]

superconductor, with an onset at T-C approximate to 3.3 K. For x=10 and higher, no superconductivity was observed down to T=1.8 K. This represents a strong suppression of superconductivity with increasing Ga content, compared to Ba8Si46 with T-C approximate to 8...

Li, Yang; Zhang, Ruihong; Liu, Yang; Chen, Ning; Luo, Z. P.; Ma, Xingqiao; Cao, Guohui; Feng, Z. S.; Hu, Chia-Ren; Ross, Joseph H., Jr.

2007-01-01T23:59:59.000Z

383

A Peltier cooling system for SiPM temperature stabilization  

E-Print Network [OSTI]

A Peltier cooling system for SiPM temperature stabilization von Simon Nieswand Bachelorarbeit auÃ?en thermisch isolierten Kupferblockes einzulassen, an welchen ein Peltier-Element angebracht wird. Um das System zu automatisieren, werden der Temperatursensor und die Stromquelle des Peltier- Elements

Hebbeker, Thomas

384

NUCLEATION PHENOMENON IN SiC PARTICULATE REINFORCED MAGNESIUM COMPOSITE  

E-Print Network [OSTI]

NUCLEATION PHENOMENON IN SiC PARTICULATE REINFORCED MAGNESIUM COMPOSITE Y. Cai, D. Taplin, M.J. Tan performance of matrix metals and alloys. Most magnesium alloy based MMCs are produced via a casting process into the last freezing interdendritic regions. For magnesium based composites, both particle pushing (or capture

Zhou, Wei

385

Radiation effects in Si-Ge quantum size structure (Review)  

SciTech Connect (OSTI)

The article is dedicated to the review and analysis of the effects and processes occurring in Si-Ge quantum size semiconductor structures upon particle irradiation including ion implantation. Comparisons to bulk materials are drawn. The reasons of the enhanced radiation hardness of superlattices and quantum dots are elucidated. Some technological applications of the radiation treatment are reviewed.

Sobolev, N. A., E-mail: sobolev@ua.pt [Universidade de Aveiro, Departamento de Fisica and I3N (Portugal)

2013-02-15T23:59:59.000Z

386

Elucidation of the Al/Si Ordering in Gehlenite Ca2Al2SiO7 by Combined 29Si and 27Al NMR Spectroscopy/Quantum Chemical Calculations  

Science Journals Connector (OSTI)

The Al/Si ordering process in aluminosilicates takes place within the chemical scheme(1)where ?H is the enthalpy of ordering of Al and Si between tetrahedral sites. ... Before synthesis, the SiO2 was treated at 600 °C for 5 h in order to remove hydroxyls present in the sample. ... between gehlenite and akermanite indicates that the structural property of this synthetic gehlenite is more suitable for the gehlenite as an end-member. ...

Pierre Florian; Emmanuel Veron; Timothy F. G. Green; Jonathan R. Yates; Dominique Massiot

2012-09-26T23:59:59.000Z

387

Epitaxial growth of Si1 ? xGex alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating  

Science Journals Connector (OSTI)

Abstract By using electron-cyclotron-resonance (ECR) Ar-plasma chemical vapor deposition (CVD) without substrate heating, the epitaxial growth process of Si1 ? xGex alloy and Ge films deposited directly on dilute-HF-treated Si(100) was investigated. From the reflection high energy electron diffraction patterns of the deposited Si1 ? xGex alloy (x = 0.50, 0.75) and Ge films on Si(100), it is confirmed that epitaxial growth can be realized without substrate heating, and that crystallinity degradation at larger film thickness is observed. The X-ray diffraction peak of the epitaxial films reveals the existence of large compressive strain, which is induced by lattice matching with the Si(100) substrate at smaller film thicknesses, as well as strain relaxation behavior at larger film thicknesses. The Ge fraction of Si1 ? xGex thin film is in good agreement with the normalized GeH4 partial pressure. The Si1 ? xGex deposition rate increases with an increase of GeH4 partial pressure. The GeH4 partial pressure dependence of partial deposition rates [(Si or Ge fraction) × (Si1 ? xGex thickness) / (deposition time)] shows that the Si partial deposition rate is slightly enhanced by the existence of Ge. From these results, it is proposed that the ECR-plasma CVD process can be utilized for Ge fraction control in highly-strained heterostructure formation of group IV semiconductors.

Naofumi Ueno; Masao Sakuraba; Junichi Murota; Shigeo Sato

2014-01-01T23:59:59.000Z

388

Axial Ge/Si nanowire heterostructure tunnel FETs.  

SciTech Connect (OSTI)

Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx}20{sup o} off the <111> axis at about 300 nm away from the Ge/Si interface. This provides a natural marker for placing the gate contact electrodes and gate metal at appropriate location for desired high-on current and reduced ambipolarity as shown in Fig. 2. The 1D heterostructures allow band-edge engineering in the transport direction, not easily accessible in planar devices, providing an additional degree of freedom for designing tunnel FETs (TFETs). For instance, a Ge tunnel source can be used for efficient electron/hole tunneling and a Si drain can be used for reduced back-tunneling and ambipolar behavior. Interface abruptness on the other hand (particularly for doping) imposes challenges in these structures and others for realizing high performance TFETs in p-i-n junctions. Since the metal-semiconductor contacts provide a sharp interface with band-edge control, we use properly designed Schottky contacts (aided by 3D Silvaco simulations) as the tunnel barriers both at the source and drain and utilize the asymmetry in the Ge/Si channel bandgap to reduce ambipolar transport behavior generally observed in TFETs. Fig. 3 shows the room-temperature transfer curves of a Ge/Si heterostructure TFET (H-TFET) for different V{sub DS} values showing a maximum on-current of {approx}7 {micro}A, {approx}170 mV/decade inverse subthreshold slope and 5 orders of magnitude I{sub on}/I{sub off} ratios for all V{sub DS} biases considered here. This high on-current value is {approx}1750 X higher than that obtained with Si p-i-n{sup +} NW TFETs and {approx}35 X higher than that obtained with CNT TFET. The I{sub on}/I{sub off} ratio and inverse subthreshold slope compare favorably to that of Si {approx} 10{sup 3} I{sub on}/I{sub off} and {approx} 800 mV/decade SS{sup -1} but lags behind those of CNT TFET due to poor PECVD nitride gate oxide quality ({var_epsilon}{sub r} {approx} 3-4). The asymmetry in the Schottky barrier heights used here eliminates the stringent requirements of abrupt doped interfaces used in p-i-n based TFETs, which is hard to achieve both in thin-film and

Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

2010-03-01T23:59:59.000Z

389

Low Cost SiOx-Graphite and Olivine Materials | Department of...  

Broader source: Energy.gov (indexed) [DOE]

Cost SiOx-Graphite and Olivine Materials Low Cost SiOx-Graphite and Olivine Materials 2010 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation...

390

Studies of a-Si:H growth mechanism, using deuterium, by rutherford recoil measurement  

SciTech Connect (OSTI)

a-Si:H were grown from silane and disilane by RF glow discharge. Deuterium (D) was used as a tracer in this investigation, in which four gas mixtures (SiH/sub 4/+D/sub 2/, SiD/sub 4/+H/sub 2/, Si/sub 2/H/sub 6/+D/sub 2/, and Si/sub 2/D/sub 6/+H/sub 2/) were employed. a-Si:H so produced were analyzed for H and D by Rutherford recoil measurement to determine whether these elements came from silanes or the dilution gas. When the RF power is low, much larger proportion of hydrogen atoms in silanes than in the dilution gas is found in a-Si:H. On the other hand, at high RF power, an excessive amount of D from the dilution gas, D/sub 2/, appears in a-Si:H.

Kuboi, O.; Aratani, M.; Hashimoto, M.; Hayashi, S.; Kohno, I.; Nagai, M.; Nozaki, T.; Yanokura, M.; Yatsurugi, Y.

1984-05-01T23:59:59.000Z

391

Ethanol synthesis from syngas over Rh-based/SiO2 catalysts: A...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

over Rh-basedSiO2 catalysts: A combined experimental and theoretical modeling study. Ethanol synthesis from syngas over Rh-basedSiO2 catalysts: A combined experimental and...

392

Chemical Bonding In Amorphous Si Coated-carbon Nanotube As Anodes...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Bonding In Amorphous Si Coated-carbon Nanotube As Anodes For Li ion Batteries: A XANES Study. Chemical Bonding In Amorphous Si Coated-carbon Nanotube As Anodes For Li ion...

393

Computational models with thermodynamic and composition features improve siRNA design  

E-Print Network [OSTI]

Background: Small interfering RNAs (siRNAs) have become an important tool in cell and molecular biology. Reliable design of siRNA molecules is essential for the needs of large functional genomics projects. Results: To ...

Shabalina, Svetlana A.

394

Ge/SiGe quantum well devices for light modulation, detection, and emission.  

E-Print Network [OSTI]

??This PhD thesis is devoted to study electro-optic properties of Gemanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells (MQWs) for light modulation, detection, and emission on Si platform.… (more)

Chaisakul, Papichaya

2012-01-01T23:59:59.000Z

395

A Ge-on-Si laser for electronic-photonic integration  

E-Print Network [OSTI]

We demonstrate room temperature photoluminescence and optical gain from the direct band gap transition of tensile strained n-type Ge-on-Si around 1600 nm, which can be applied to a Si-based laser for optical interconnects ...

Sun, Xiaochen

396

Direct-gap optical gain of Ge on Si at room temperature  

E-Print Network [OSTI]

Lasers on Si are crucial components of monolithic electronic–photonic integration. Recently our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible with Si complementary metal oxide semiconductor ...

Liu, Jifeng

397

E-Print Network 3.0 - al si alloys Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SiGe alloys to high-speed devices and circuits is given... , however, development in the growth tech- nology of high-quality SiGe ... Source: Rieh, Jae-Sung - School of Electrical...

398

CO2 laser CVD of a-Si:H: in situ gas analysis and model calculations  

Science Journals Connector (OSTI)

and disilane Si2H6 induced by continuous wave CO2 laser irradiation has been investigated under the conditions of chemical vapor deposition (CVD) of amorphous hydrogenated silicon a-Si:H. At the very position of...

F. Falk; G. Mollekopf; H. Stafast

1998-11-01T23:59:59.000Z

399

Photoemission study of the Si(111)/Gd interface: A comparison with the bulk silicides  

SciTech Connect (OSTI)

Synchrotron-radiation photoemission data from the Si(111)/Gd interface (Si 2p/Gd 4 f core levels and valence states) are compared with those from all of the silicides in the Si--Gd phase diagram (Gd/sub 3/Si/sub 5/, GdSi, Gd/sub 5/Si/sub 3/) measured in strictly comparable conditions. It is shown that the first silicide-like reaction product is formed for a Gd coverage of about 2 monolayers and that this interface silicide-like product is correlated with GdSi. These results are also discussed in connection with the Si(111)/Yb interface where the same experimental approach shows a correlation between the first silicide-like interface product and the metal-rich silicide.

Puppin, E.; Nogami, J.; Carbone, C.; Shen, Z.X.; Lindau, I.; Pate, B.B.; Abbati, I.; Braicovich, L.

1987-07-01T23:59:59.000Z

400

Temperature response of 13C atoms in amorphized 6H-SiC. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Temperature response of 13C atoms in amorphized 6H-SiC. Temperature response of 13C atoms in amorphized 6H-SiC. Abstract: Implantation of 13C2+ ions was employed to produce a...

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Mesoscale Origin of the Enhanced Cycling-Stability of the Si...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mesoscale Origin of the Enhanced Cycling-Stability of the Si-Conductive Polymer Anode for Li-ion Batteries. Mesoscale Origin of the Enhanced Cycling-Stability of the Si-Conductive...

402

Reduced graphene oxide/porous Si composite as anode for high-performance lithium ion batteries  

Science Journals Connector (OSTI)

Reduced graphene oxide/porous Si composite was fabricated through ... subsequent dispersing porous Si in the suspension of graphene oxide followed by reduced process. The electrochemical performance of the obtain...

Hua-Chao Tao; Xue-Lin Yang; Lu-Lu Zhang; Shi-Bing Ni

2014-08-01T23:59:59.000Z

403

Nanobulges on surface of silicon film and Si–Yb quantum cascade laser  

Science Journals Connector (OSTI)

Abstract Nanosilicon provides pumping levels and the localized states produced from Si–Yb bond on bulge surface of silicon film generate stimulated emission, in which a four-level system is built for chip-laser. The Si–Yb nanobulges on Si film cause a remarkable increase of the surface area and make a buffering layer for mismatch between Si and Yb lattices. Dynamics of photoluminescence and electroluminescence on nanosilicon coated by Yb is investigated. Stimulated peaks near 700 nm are observed on silicon quantum dots coated by Yb. Enhanced EL peaks in the wavelength region from 1300 nm to 1650 nm are measured on the Si film coated by Yb. Si–Yb quantum cascade laser is designed, in which emission wavelength could be manipulated into the window of optical communication by Si–Yb bonding on bulge surface of Si film.

Wei-Qi Huang; Shirong Liu; Zhong-Mei Huang; Xin-Jian Miao; Chao-Jian Qin; Quan Lv

2014-01-01T23:59:59.000Z

404

SiO2 Fracture: Chemomechanics with a Machine Learning Hybrid...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SiO2 Fracture: Chemomechanics with a Machine Learning Hybrid QMMM Scheme SiO2 Fracture: Chemomechanics with a Machine Learning Hybrid QMMM Scheme. Close-up of a crack tip in a...

405

E-Print Network 3.0 - a-si alloy solar Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

1m intrinsic a-Si:H layers were... intrinsic a-Si:H layer and the metal film. For the solar cell test, the light is coming from the bottom... through structure innovations....

406

Calculations of the Electronic and Transport Properties in Si-Ge-H Alloys  

Science Journals Connector (OSTI)

In previous work1,2..., we have obtained an understanding of the role of hydrogen in amorphous silicon (a-Si) performing first principles calculations of the electronic and transport properties of a-Si:H...

D. A. Papaconstantopoulos; E. N. Economou…

1985-01-01T23:59:59.000Z

407

PID-free C-Si PV Module Using Novel Chemically-Tempered Glass  

Broader source: Energy.gov (indexed) [DOE]

PID-free c-Si PV module using novel chemically-tempered glass We have developed a PID free c-Si PV module using novel glass that is chemically tempered by substitution of Na ions...

408

PID-free C-Si PV Module Using Novel Chemically-Tempered Glass...  

Broader source: Energy.gov (indexed) [DOE]

PID-free C-Si PV Module Using Novel Chemically-Tempered Glass PID-free C-Si PV Module Using Novel Chemically-Tempered Glass Presented at the PV Module Reliability Workshop,...

409

E-Print Network 3.0 - aptamer-functionalized si-nanowire fet...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

, single-crystalline Si nanowires can serve as alternative semiconducting materials for nano-FET-based 0956... .4. Fabrication of Si nanowire field-effect transistors Both n-type...

410

Annealing Simulations of Nano-Sized Amorphous Structures in SiC...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Simulations of Nano-Sized Amorphous Structures in SiC. Annealing Simulations of Nano-Sized Amorphous Structures in SiC. Abstract: A two-dimensional model of a nano-sized amorphous...

411

Hollow Core-Shell Structured Porous Si-C Nanocomposites for Li...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Hollow Core-Shell Structured Porous Si-C Nanocomposites for Li-Ion Battery Anodes. Hollow Core-Shell Structured Porous Si-C Nanocomposites for Li-Ion Battery Anodes. Abstract:...

412

Structural and Magnetic Properties of Epitaxial MnSi(111) Thin Films.  

E-Print Network [OSTI]

??MnSi(111) films were grown on Si(111) substrates by solid phase epitaxy (SPE) and molecular beam epitaxy (MBE) to determine their magnetic structures. A lattice mismatch… (more)

Karhu, Eric

2012-01-01T23:59:59.000Z

413

Fuel Consumption and NOx Trade-offs on a Port-Fuel-Injected SI...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Consumption and NOx Trade-offs on a Port-Fuel-Injected SI Gasoline Engine Equipped with a Lean-NOx Trap Fuel Consumption and NOx Trade-offs on a Port-Fuel-Injected SI Gasoline...

414

Nondestructive Testing of NITE-SiC Ceramics for Fusion Reactor Application  

Science Journals Connector (OSTI)

Ultrasonic test (UT) method is a suitable one for examining the inherent structural defects such as pores and cracks of SiC/SiC composites. In this study, the examination sensitivity limit of UT method based o...

Yun-Seok Shin; Yi-Hyun Park; Tatsuya Hinoki

2010-01-01T23:59:59.000Z

415

Development of Solar Grade Silicon (SoG-Si) Feedstock by Recycling SoG-Si Wastes  

SciTech Connect (OSTI)

Experiment results of EM separation show that the non-metallic inclusions were successfully pushed to the boundary layer of the crucible under EM force. Larger frequency and smaller current generate smaller thickness of accumulated inclusions. More detailed EM separation experiments are undergoing to investigate the factors that affect the removal efficient of inclusions from SoG-Si

Lifeng Zhang; Anping Dong; Lucas Nana Wiredu Damoah

2013-01-24T23:59:59.000Z

416

Oxidation mechanisms and kinetics of 1D-SiC/C/SiC composite materials; 1: An experimental approach  

SciTech Connect (OSTI)

The oxidation of unidirectional SiC/C/SiC model composites has been investigated through thermogravimetric analysis, optical/electron microscopy, and electrical measurements. The influence of temperature and carbon interphase thickness on the oxidation of the composites is discussed. The oxidation involves three phenomena: (1) reaction of oxygen with the carbon interphase resulting in pores around the fibers, (2) diffusion of oxygen and carbon oxides along the pores, and (3) reaction of oxygen with the pore walls leading to the growth of silica layers on both the fibers and matrix. In composites with a thin carbon interphase treated at T > 1,000 C the pores are rapidly sealed by silica. Under such conditions, the oxidation damages are limited to the vicinity of the external surface and the materials exhibit a self-healing character. Conversely, long exposures at 900 C give rise to the formation of microcracks in the matrix related to mechanical stresses arising from the in situ SiC/SiO[sub 2] conversion. Finally, the self-heating character is not observed in composites with a thick interphase since carbon is totally consumed before silica can seal the pores.

Filipuzzi, L.; Camus, G.; Naslain, R. (Domaine Univ., Pessac (France). Lab. des Composites Thermostructuraux); Thebault, J. (Societe Europeenne de Propulsion, Saint Medard en Jalles (France))

1994-02-01T23:59:59.000Z

417

N-AND P-TYPE SiGe/Si SUPERLATTICE COOLERS Xiaofeng Fan, Gehong Zeng, Edward Croke  

E-Print Network [OSTI]

thermoelectric material for high temperature applications. In this paper the fabrication and characterization to solve some of these problems. SiGe is a good thermoelectric material for high temperature refrigeration electrically in series and thermally in parallel, similar to conventional thermoelectric devices, and thus

418

Qualitative sims analysis of28,29,30Si isotope concentration in silicon using a Tof.Sims-5 Setup  

Science Journals Connector (OSTI)

The possibility of quantitative SIMS determination of28-30Si isotope concentrations in silicon samples using a TOF.SIMS-5 spectrometer is shown. Th e isotope...28Si isotope (deposited on natural Si substrates), a...

M. N. Drozdov; Yu. N. Drozdov…

2010-01-01T23:59:59.000Z

419

A VUV photoionization measurement and ab-initio calculation of the ionization energy of gas phase SiO2  

E-Print Network [OSTI]

g [O-Si-O] + . Electronic structure calculations aid in thewith CO 2 . Electronic structure calculations were performedSiO 2 PIE. Electronic structure calculations on SiO 2 and

Kostko, Oleg

2010-01-01T23:59:59.000Z

420

Role of Si/Al Ratio on Immobilization and Stability of Rhodium Complexes on ZSM-5  

E-Print Network [OSTI]

Rhodium complexes within the pores of zeolite ZSM-5 with varying Si/Al ratios (Si/Al 23, Si/Al 50, and Si/Al 280) were prepared from Rh1+(CO)2(C5H7O2), Rh22+(CO2CH3)4, and Rh3+(C5H7O2)3 followed by thermal treatment in He. IR results indicate...

Long, Brandon

2009-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Effect of Al on the sharpness of the MgSiO3 perovskite to post-perovskite phase transition  

E-Print Network [OSTI]

Effect of Al on the sharpness of the MgSiO3 perovskite to post-perovskite phase transition S. Akber the influence of Al on the recently discovered perovskite to post-perovskite phase transition in MgSiO3. We examine three substitution mechanisms for Al in the two structures: MgSi ! AlAl; SiSiO ! AlAl5; and Si

Steinle-Neumann, Gerd

422

Phanerozoic tectono-stratigraphic evolution of the Trans-Pecos and Permian basin regions (Mexico, Texas, New Mexico) using Landsat imagery, subsurface and outcrop data  

SciTech Connect (OSTI)

Integrating regional Landsat imagery, outcrop field studies, and subsurface data has resulted in a more comprehensive understanding and delineation of the tectono-stratigraphic evolution of the Trans-Pecos region. Landsat imagery were acquired and registered to the existing 1:25000 scale maps and mosaiced to create a regional view of the Trans-Pecos and Permian basin region. The imagery were used to extrapolate and map key stratigraphic and tectonic elements after calibration from documented outcrop and subsurface data. The interpretations aided in the extrapolation of scattered control information and were critical in the complete reconstruction of the geologic history of the area. The Trans-Pecos Phanerozoic history comprises five tectono-depositional phases, and these have controlled the shape of the modem landscape: (1) Late Proterozoic rifting (Gondwana from Laurentia), and development of the Early-Middle Paleozoic Tobosa basin; (2) Pennsylvanian collision (South and North Americas), and differentiation of the Tobosa basin into the Midland, Delaware, Orogrande, and Pedregosa basins separated by basement blocks: Central Basin Platform, Diablo Platform, Burro-Florida Platform; (3) Middle Mesozoic transtensional rifting (Mexico from North America), and Late Jurassic failed rifting of the Mexican Chihuahua and Coahuila Troughs west and south of the Diablo Platform; (4) Late Mesozoic Laramide collision (Mexico and Texas), and development of the Chihuahua fold/thrust belt limited by the western margin of the Diablo Platform; (5) Late Cenozoic North American basin and Range rifting, and development of Rio Grande grabens, block-faulted mountains, and volcanics. The Tobosa basin was a passive-margin interior sag; its continental margin was south of the Marathons.

Markello, J.R.; Sarg, J.F. [Mobil Technology Corporation, Dallas, TX (United States)

1996-08-01T23:59:59.000Z

423

Possibilities of increasing the efficiency of Si and CuInSe2 solar cells  

Science Journals Connector (OSTI)

The paper proposes a method of increasing the efficiency of Si and CuInSe2 solar cells using the impact ionization and impurity...pZnTe-pSi-nSi and pZnTe-pCuInSe2-n(CuInSe2)1?x (2InAs) ...

M. S. Saidov

2011-09-01T23:59:59.000Z

424

Equilibrium morphologies for Cl-roughened Si,,100... at 700750 K: Dependence on Cl concentration  

E-Print Network [OSTI]

Equilibrium morphologies for Cl-roughened Si,,100... at 700­750 K: Dependence on Cl concentration G March 2003 Adsorbed halogen atoms on Si 100 - 2 1 can induce roughening at temperatures where material roughening at 700­750 K for surfaces with 0.1­0.99 ML of Cl. Dimer vacancies and Si adatoms were observed

Weaver, John H.

425

Impact of SiC Devices on Hybrid Electric and Plug-in Hybrid Electric Vehicles  

E-Print Network [OSTI]

Impact of SiC Devices on Hybrid Electric and Plug-in Hybrid Electric Vehicles Hui Zhang1 , Leon M -- The application of SiC devices (as battery interface, motor controller, etc.) in a hybrid electric vehicle (HEV, vehicle simulation software). Power loss models of a SiC inverter are incorporated into PSAT powertrain

Tolbert, Leon M.

426

Si-C multilayer quasi crystals preparation by DC magnetron sputtering  

Science Journals Connector (OSTI)

Silicon carbide (SiC) is becoming one of the most important electronic materials in recent years. Single crystalline SiC is a wide-bandgap semiconductor, which finds a wide range of applications in high temperature, power consuming, and fast-acting electron ... Keywords: C-V measurement, Magnetron sputtering, Si-C multilayer

G. Golan; A. Axelevitch; B. Gorenstein

2006-12-01T23:59:59.000Z

427

Catalyst proximity effects on the growth rate of Si nanowires S. T. Boles,1,a  

E-Print Network [OSTI]

Catalyst proximity effects on the growth rate of Si nanowires S. T. Boles,1,a E. A. Fitzgerald,1 C-liquid-solid VLS mechanism were fabricated using Au-catalyst nanoparticles and silane SiH4 gas on Si substrates. Au, with the growth rate increasing with increasing concentrations of Au-catalyst particles on the wafer surface

428

Magnetic properties and switching volumes of nanocrystalline SmFeSiC films  

SciTech Connect (OSTI)

Systematic studies of the effects of Si addition on the magnetic and magnetization reversal properties of SmFeSiC films are presented. The magnetic switching volume and other magnetic parameters (e.g., coercivity) are strongly dependent upon the Si content. Correlations between switching volume, coercivity, and the intergrain interactions are discussed. {copyright} {ital 1997 American Institute of Physics.}

Zhang, S.Y. [State Key Laboratory of Magnetism, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, Peoples Republic of (China)] [State Key Laboratory of Magnetism, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, Peoples Republic of (China); Shan, Z.S.; Liu, Y. [Center for Materials Research and Analysis, University of Nebraska, Lincoln, Nebraska 68588-0113 (United States)] [Center for Materials Research and Analysis, University of Nebraska, Lincoln, Nebraska 68588-0113 (United States); Zhao, T.Y.; Zhao, J.G.; Shen, B.G.; Zhan, W.S. [Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, Peoples Republic of (China)] [Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, Peoples Republic of (China); Sellmyer, D.J. [Center for Materials Research and Analysis, University of Nebraska, Lincoln, Nebraska 68588-0113 (United States)] [Center for Materials Research and Analysis, University of Nebraska, Lincoln, Nebraska 68588-0113 (United States)

1997-04-01T23:59:59.000Z

429

Optical gain from the direct gap transition of Ge-on-Si at room temperature  

E-Print Network [OSTI]

We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.

Liu, Jifeng

430

Fig. 1: Schematic of the optoelectronic switch. Source/drain and channel regions formed in Si.  

E-Print Network [OSTI]

Si Ge E-field Fig. 1: Schematic of the optoelectronic switch. Source/drain and channel regions (z) energy Novel Si-based CMOS Optoelectronic Switching Device Operating in the Near Infrared Ali K, high performance optoelectronic switch is introduced. The device is a Si- MOSFET with Ge gate that can

Miller, David A. B.

431

Crumpled Graphene-Encapsulated Si Nanoparticles for Lithium Ion Battery Anodes  

E-Print Network [OSTI]

Crumpled Graphene-Encapsulated Si Nanoparticles for Lithium Ion Battery Anodes Jiayan Luo, Xin Zhao Information ABSTRACT: Submicrometer-sized capsules made of Si nanoparticles wrapped by crumpled graphene dispersion of micrometer-sized graphene oxide (GO) sheets and Si nanoparticles were nebulized to form aerosol

Huang, Jiaxing

432

SiC performance of coated fuel particles under high-temperature atmosphere of air  

Science Journals Connector (OSTI)

Abstract To better understand whether the SiC layer can withstand the corrosion given by the chemical reaction between SiC and O2, our experiments focused mainly on the effect of oxygen on SiC-coated fuel particles at high temperature. Tests were conducted on non-irradiated coated fuel particles in an atmosphere of air over a range of temperatures between 800 and 1600 °C. This paper summarizes the failure fractions, surface morphology and microstructure of the SiC coating, etc. The morphology of SiC-coated particles surfaces, optical and scanning electron micrographs and the oxygen distribution of polished SiC layers at 800, 1000 and 1200 °C for 200 h under air atmosphere showed that the features of SiC layers did not change in these cases. In contrast with the aforementioned cases, the behavior of SiC layers was deteriorated when the oxidation temperature was beyond 1400 °C. More serious the deterioration, higher the oxidation temperature is. The thickness of SiO2 layer from outside to inside SiC layers reached 6 ?8 ?m, and a large number of SiC-coated particles were broken into fragment at 1600 °C. The experiment results show that the oxidation of the SiC layer proceeds slowly at temperatures around 1400 °C and more rapidly as the temperature approaches 1600 °C.

Chunhe Tang; Bing Liu; Ziqiang Li; Ying Quan; Hongsheng Zhao; Youlin Shao

2014-01-01T23:59:59.000Z

433

Theoretical analysis of Si1xyGexCy near-infrared photodetectors  

E-Print Network [OSTI]

Theoretical analysis of Si1Ã?xÃ?yGexCy near-infrared photodetectors Baojun Li Zhongshan (Sun Yat and Engineering Cambridge, Massachusetts 02139 Abstract. A near-infrared waveguide photodetector in a Si-based ter, especially for SiGe with a high Ge fraction. To obtain sufficient absorption at near-infrared wavelengths

434

Electro-thermal Simulations of Strained-Si MOSFETs under ESD conditions  

E-Print Network [OSTI]

that of bulk-Si [1,2]) causes severe self-heating, considerably changing some electrical properties of strained-Si is of technological importance. In this work, electrical and thermal characteristics with bulk-Si devices by injecting the Human Body Model (HBM) and Machine Model (MM) ESD stress [3]. 2

Dutton, Robert W.

435

sup_tran.xls  

Gasoline and Diesel Fuel Update (EIA)

(Trillion Btu) 2000- 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2020 Energy Use by Mode Highway Light-Duty Vehicles 14970.8 15191.3 15547.6 16054.3 16397.0 16743.0 17049.5 17379.1 17749.7 18129.3 18485.4 18843.9 19193.1 19518.8 19800.2 20071.6 20352.6 20620.8 20874.5 21140.7 21367.4 1.8% Automobiles 8641.2 8557.7 8554.5 8628.8 8632.3 8639.0 8622.6 8629.9 8669.2 8715.0 8763.0 8824.1 8891.3 8958.2 9010.9 9065.1 9131.3 9196.1 9258.6 9330.1 9387.4 0.4% Light Trucks 6304.8 6609.0 6968.5 7400.7 7739.9 8079.1 8402.1 8724.4 9055.5 9389.2 9697.2 9994.5 10276.3 10534.9 10763.4 10980.5 11195.1 11398.3 11589.2 11783.8 11953.0 3.3% Motorcycles 24.8 24.6 24.6 24.8 24.8 24.8 24.8 24.8 24.9 25.0 25.2 25.3 25.5 25.7 25.9 26.0 26.2 26.4 26.6 26.8 27.0 0.4% Commercial Light Trucks 1/ 637.6 624.1

436

sup_tran.xls  

Gasoline and Diesel Fuel Update (EIA)

Type Type (Trillion Btu) 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 Energy Use by Mode Highway Light-Duty Vehicles 15161.1 15575.7 15906.8 16472.8 16956.1 17383.6 17761.0 18145.3 18523.6 18909.9 19286.4 19680.7 20088.4 Automobiles 8876.0 8832.9 8766.0 8824.8 8847.8 8851.9 8868.7 8891.4 8906.8 8939.0 8971.8 9011.9 9058.7 Light Trucks 6259.5 6717.3 7115.4 7622.5 8082.6 8506.0 8866.5 9228.1 9591.0 9945.0 10288.6 10642.6 11003.3 Motorcycles 25.6 25.5 25.4 25.6 25.7 25.7 25.8 25.8 25.9 26.0 26.0 26.2 26.3 Commercial Light Trucks 1/ 583.8 586.5 584.4 605.0 624.7 637.7 648.0 658.6 670.4 683.6 696.8 709.8 724.5 Buses 251.1 238.9 239.8 242.3 244.6 246.6 248.7 250.7 252.8 254.8 256.6 258.2 259.4 Transit 98.9 94.1 94.5 95.5 96.4 97.2 98.0 98.8 99.6 100.4 101.1 101.7 102.2 Intercity 36.6 34.7 34.8 35.2 35.5 35.8 36.1 36.4 36.7

437

tran.PDF  

Gasoline and Diesel Fuel Update (EIA)

(Trillion Btu) 1999- Mode and Type 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2020 Energy Use by Mode Highway Light-Duty Vehicles 14878.5 14961.0 15498.3 15969.6 16275.0 16626.7 16968.3 17312.0 17628.6 17937.7 18240.0 18513.6 18773.7 19019.2 19284.9 19561.5 19832.4 20085.3 20321.4 20547.5 20757.4 20980.6 1.7% Automobiles 7805.9 7598.9 7675.1 7710.8 7655.6 7630.2 7612.8 7599.1 7582.7 7570.5 7561.6 7553.5 7534.2 7522.2 7531.3 7540.9 7561.4 7589.1 7613.4 7642.4 7668.5 7711.0 -0.1% Light Trucks 7050.1 7340.3 7801.2 8236.7 8597.4 8974.6 9333.6 9691.1 10024.1 10345.5 10656.6 10938.3 11217.8 11475.3 11732.0 11998.9 12249.4 12474.3 12686.1 12883.2 13066.8 13247.4 3.0% Motorcycles 22.4 21.8 22.0 22.2 22.0 21.9 21.9 21.8 21.8 21.7 21.7 21.7 21.6 21.6 21.6 21.7 21.7 21.8 21.9 21.9 22.0 22.1

438

he Bush administra-tion has listed myriad  

E-Print Network [OSTI]

SURVEILLANCE: By dissembling random nuclear weapons in the stockpile and closely inspecting and testing explosives and nuclear materials at the Nevada Test Site to gather diagnostic information about weapons Nuclear Security Ad- ministration (NNSA), a division of the Energy Department, to scrutinize the nuclear

Rhoads, James

439

Intrinsic device-to-device variation in graphene field-effect transistors on a Si/SiO{sub 2} substrate as a platform for discriminative gas sensing  

SciTech Connect (OSTI)

Arrays of nearly identical graphene devices on Si/SiO{sub 2} exhibit a substantial device-to-device variation, even in case of a high-quality chemical vapor deposition (CVD) or mechanically exfoliated graphene. We propose that such device-to-device variation could provide a platform for highly selective multisensor electronic olfactory systems. We fabricated a multielectrode array of CVD graphene devices on a Si/SiO{sub 2} substrate and demonstrated that the diversity of these devices is sufficient to reliably discriminate different short-chain alcohols: methanol, ethanol, and isopropanol. The diversity of graphene devices on Si/SiO{sub 2} could possibly be used to construct similar multisensor systems trained to recognize other analytes as well.

Lipatov, Alexey [Department of Chemistry, University of Nebraska–Lincoln, Lincoln, Nebraska 68588 (United States); Varezhnikov, Alexey; Sysoev, Victor [Department of Physics, Saratov State Technical University, Saratov 410054 (Russian Federation); Augustin, Martin; Sommer, Martin [Institute of Microstructure Technology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Bruns, Michael [Institute for Applied Materials - Energy Storage Systems (IAM-ESS), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Kolmakov, Andrei, E-mail: andrei.kolmakov@nist.gov [Department of Physics, Southern Illinois University, Carbondale, Illinois 62901 (United States); Sinitskii, Alexander, E-mail: sinitskii@unl.edu [Department of Chemistry, University of Nebraska–Lincoln, Lincoln, Nebraska 68588 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska–Lincoln, Lincoln, Nebraska 68588 (United States)

2014-01-06T23:59:59.000Z

440

Fern (Notholaena sinuata, var. Crenata) Poisoning in Sheep, Goats and Cattle : The So-Called "Jimmies" of the Trans-Pecos.  

E-Print Network [OSTI]

,dculture, \\TTashington, D. C.) For many years ranchers in certain areas of the Trans-Pecos have recognized a disease entity which they refer to as "jimmies." The disease is characterized by sudden seizures of severe trembling which may be followed by sudden death... in cattle but authentic reports of losses from this source have not been received. Since exercise is required to produce the symptoms and since no sane rancher ill subject affected sheep to unnecessary driving or handling, there is no accurate method...

Mathews, Frank P. (Frank Patrick)

1942-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


442

Adsorption and polymerisation of H4SiO4 on ferrihydrite and goethite: an infrared and diffuse layer model study.  

E-Print Network [OSTI]

??Silicic acid (H4SiO4) adsorbs on iron oxide surfaces via Si-O-Fe linkages, and silanol condensation reactions can then occur at the interface producing Si-O-Si linkages. These… (more)

Dol Hamid, Rossuriati

2014-01-01T23:59:59.000Z

443

ZrO sub 2 and ZrO sub 2 /SiC particle reinforced-MoSi sub 2 matrix composites  

SciTech Connect (OSTI)

ZrO{sub 2}-MoSi{sub 2} and ZrO{sub 2}/SiC-MoSi{sub 2} composites were fabricated by hot pressing and hot pressing/HIP at 1700{degrees}C. No reactions between ZrO{sub 2}, SiC, and MoSi{sub 2} were observed. An amorphous silica glassy phase was present in all composites. Composites with unstabilized ZrO{sub 2} particles exhibited the highest room temperature fracture toughness, reaching a level three times that of pure MoSi{sub 2}. Both the room temperature toughness and 1200{degrees}C strength of ZrO/{sub 2}SiC-MoSi{sub 2} composites were higher than ZrO{sub 2}-MoSi{sub 2} composites, indicating beneficial effects of combined reinforcement phases. Low strength levels were observed at 1400{degrees}C due to the presence of the silica glassy phase. Elimination of glassy phases and refinements in microstructural homogeneity are processing routes important to the optimization of the mechanical properties of these types of composites. 18 refs., 7 figs.

Petrovic, J.J.; Bhattacharya, A.K.; Honnell, R.E.; Mitchell, T.E. (Los Alamos National Lab., NM (United States)); Wade, R.K. (Arizona Materials Lab., Tucson, AZ (United States)); McCellan, K.J. (Case Western Reserve Univ., Cleveland, OH (United States). Dept. of Materials Science and Engineering)

1991-01-01T23:59:59.000Z

444

Mechanism of power consumption inhibitive multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure resistance random access memory  

SciTech Connect (OSTI)

In this paper, multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure is introduced to reduce the operation power consumption of resistive random access memory (RRAM) device by modifying the filament formation process. And the configuration of multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure is confirmed and demonstrated by auger electron spectrum. Material analysis together with conduction current fitting is applied to qualitatively evaluate the carrier conduction mechanism on both low resistance state and high resistance state. Finally, single layer and multilayer conduction models are proposed, respectively, to clarify the corresponding conduction characteristics of two types of RRAM devices.

Zhang, Rui; Lou, Jen-Chung [School of Software and Microelectronics, Peking University, Beijing 100871 (China); Tsai, Tsung-Ming, E-mail: tmtsai@faculty.nsysu.edu.tw, E-mail: tcchang@mail.phys.nsysu.edu.tw; Chang, Kuan-Chang; Huang, Syuan-Yong; Shih, Chih-Cheng; Pan, Jhih-Hong; Tung, Cheng-Wei [Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Chang, Ting-Chang, E-mail: tmtsai@faculty.nsysu.edu.tw, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan 700, Taiwan (China); Chen, Kai-Huang [Department of Electronics Engineering and Computer Science, Tung-Fang Design Institute, Kaohsiung, Taiwan (China); Young, Tai-Fa; Chen, Hsin-Lu [Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chen, Jung-Hui [Department of Chemistry, National Kaohsiung Normal University, Kaohsiung, Taiwan (China); Chen, Min-Chen; Syu, Yong-En [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Sze, Simon M. [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)

2013-12-21T23:59:59.000Z

445

Surface Crystallization in a Liquid AuSi Alloy  

SciTech Connect (OSTI)

X-ray measurements reveal a crystalline monolayer at the surface of the eutectic liquid Au{sub 82}Si{sub 18}, at temperatures above the alloy's melting point. Surface-induced atomic layering, the hallmark of liquid metals, is also found below the crystalline monolayer. The layering depth, however, is threefold greater than that of all liquid metals studied to date. The crystallinity of the surface monolayer is notable, considering that AuSi does not form stable bulk crystalline phases at any concentration and temperature and that no crystalline surface phase has been detected thus far in any pure liquid metal or nondilute alloy. These results are discussed in relation to recently suggested models of amorphous alloys.

Shpyrko,O.; Streitel, R.; Balagurusamy, V.; Grigoriev, A.; Deutsch, M.; Ocko, B.; Meron, M.; Lin, B.; Pershan, P.

2006-01-01T23:59:59.000Z

446

SiO MASERS IN ASYMMETRIC MIRAS. II. R CANCRI  

SciTech Connect (OSTI)

This is the second paper in a series of multi-epoch observations of the SiO masers at 7 mm wavelength in several asymptotic giant branch stars from a sample of Mira variable stars showing evidence of asymmetric structure in the infrared. These stars have been observed interferometrically in the infrared by the Infrared Optical Telescope Array and with Very Long Baseline Array measurements of the SiO masers. In this paper, we present the observations of R Cancri (R Cnc). The systemic velocity of R Cnc is estimated to be 15.8 {+-} 0.2 km s{sup -1}. A comparison is made with the model calculations of Gray et al. which predict some but not all observed features.

Cotton, W. D. [National Radio Astronomy Observatory, 520 Edgemont Road, Charlottesville, VA 22903-2475 (United States); Ragland, S. [W. M. Keck Observatory, 65-1120 Mamalahoa Hwy, Kamuela, HI 96743 (United States); Pluzhnik, E. A. [NASA, Ames Research Center, Moffett Field, CA 94035 (United States); Danchi, W. C. [NASA Goddard Space Flight Center, Exoplanets and Stellar Astrophysics, Code 667, Greenbelt, MD 20771 (United States); Traub, W. A. [Jet Propulsion Laboratory, California Institute of Technology, M/S 301-451, 4800 Oak Grove Drive, Pasadena, CA 91109 (United States); Willson, L. A. [Department of Physics and Astronomy, Iowa State University, Ames, IA 50014 (United States); Lacasse, M. G. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States)], E-mail: bcotton@nrao.edu

2009-12-01T23:59:59.000Z

447

Multi-Layer Inkjet Printed Contacts to Si  

SciTech Connect (OSTI)

Ag, Cu, and Ni metallizations were inkjet printed with near vacuum deposition quality. The approach developed can be easily extended to other conductors such as Pt, Pd, Au, etc. Thick highly conducting lines of Ag and Cu demonstrating good adhesion to glass, Si, and printed circuit board (PCB) have been printed at 100-200 deg C in air and N2 respectively. Ag grids were inkjet-printed on Si solar cells and fired through the silicon nitride AR layer at 850 deg C, resulting in 8% cells. Next generation inks, including an ink that etches silicon nitride, have now been developed. Multi-layer inkjet printing of the etching ink followed by Ag ink produced contacts under milder conditions and gave solar cells with efficiencies as high as 12%.

Curtis, C. J.; van Hest, M.; Miedaner, A.; Kaydanova, T.; Smith, L.; Ginley, D. S.

2005-11-01T23:59:59.000Z

448

Leakage currents in 4H-SiC JBS diodes  

SciTech Connect (OSTI)

Leakage currents in high-voltage 4H-SiC diodes, which have an integrated (p-n) Schottky structure (Junction Barrier Schottky, JBS), have been studied using commercial diodes and specially fabricated (based on a commercial epitaxial material) test Schottky diodes with and without the JBS structure. It is shown that (i) the main role in reverse charge transport is played by SiC crystal structure defects, most probably, by threading dislocations (density {approx}10{sup 4} cm{sup -2}), and (ii) the JBS structure, formed by the implantation of boron, partially suppresses the leakage currents (by up to a factor of 10 at optimal separation, 8 {mu}m between local p-type regions).

Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Grekhov, I. V.; Potapov, A. S.; Kon'kov, O. I.; Il'inskaya, N. D.; Samsonova, T. P. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Korol'kov, O.; Sleptsuk, N. [Tallinn University of Technology, Department of Electronics (Estonia)

2012-03-15T23:59:59.000Z

449

Axial Ge/Si nanowire heterostructure tunnel FETs  

SciTech Connect (OSTI)

The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

Picraux, Sanuel T [Los Alamos National Laboratory; Daych, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

450

Ge/Si core/multi shell heterostructure FETs  

SciTech Connect (OSTI)

Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.

Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

451

Systematic Study of the Effect of La2O3 Incorporation on the Flatband Voltage and Si Band Bending in the TiN/HfO2 /SiO2 /p-Si Stack  

SciTech Connect (OSTI)

Recent studies have shown that La{sub 2}O{sub 3} films can be used to adjust the threshold voltage (V{sub t}) of NMOS Hf-based high-k/metal gate devices to desirable values, and a dipole at the high-k/SiO{sub 2} interface has been proposed to explain the V{sub t} shifts. In order to investigate the mechanism of the V{sub t} shift further, we have measured the flatband voltage (V{sub fb}) and Si band bending of technologically relevant TiN/HfO{sub 2}/La{sub 2}O{sub 3}/SiO{sub 2}/p-Si stacks where the thickness and position of the La{sub 2}O{sub 3} layer have been systematically varied. We observed systematic changes in V{sub fb}, Si band bending and the HfO{sub 2}-Si valence band offset as a function of La{sub 2}O{sub 3} layer thickness and position. These changes can be explained by a band alignment model that includes a dipole at the high-k/SiO{sub 2} interface, thus supporting the work of previous authors. In addition, we have derived the theoretical relationship between V{sub fb} and Si band bending, which agrees well with our experimental measurements.

M Di; E Bersch; R Clark; S Consiglio; G Leusink; A Diebold

2011-12-31T23:59:59.000Z

452

Intermediate layers in the a-Si:H growth processes  

SciTech Connect (OSTI)

The intermediate layers (IL) exist at the boundary between liquid (plasma, gas) and solid phases during production processes of a-Si:H. The IL properties differ from the properties of the boundary regions anomaly. The substance in IL is in a strong nonequilibrium state of the bifurcation or the cascade of bifurcations. The processes in the IL determine the properties and the structure of the material being produced.

Aivazov, A.A.; Bodyagin, N.V. [Moscow Inst. of Electronic Technology (Russian Federation); Vikhrov, S.P. [Radiotechnical Academy, Ryazan (Russian Federation). CR Faculty

1996-12-31T23:59:59.000Z

453

Evolution of ?-SiC in laser-generated plasmas  

Science Journals Connector (OSTI)

A relevant issue in fusion reactors is to choose materials for plasma facing components such that an acceptable lifetime is guaranteed. Silicon carbide is among the very few materials that appear promising to resist harsh environmental conditions including high thermal loads, strong chemical erosion and severe energetic particle bombardment. Thin films, around 130 nm thick, of cubic silicon carbide (?-SiC) were pulsed laser deposited on Si (1 0 0) substrates at 1173 K, at fluences ranging from 3 to 9 J cm?2. The films deposited at 6 J cm?2 appear the most compact, homogeneous, crack free, with a reduced density of particulate and droplets at the surface. Such films were irradiated by different plasmas, generated by ns and fs laser pulses respectively, corresponding to deposited intensities between 108 W cm?2 and 1018 W cm?2. The compositional, morphological and microstructural evolution of irradiated ?-SiC films were investigated by energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), vibrational spectroscopies (IR and Raman) and transmission electron microscopy (TEM). Under both irradiation conditions the films remain well adherent to the substrates, showing thermal and mechanical stability. The samples loose only a minor fraction of carbon. However, all irradiations induce meaningful changes of surface morphology, qualitatively different between the ns and fs pulses. In the former an evident columnar structure develops at the crater edges; in the latter, after a single pulse, a wavy structure was observed whose periodicity is nearly identical to the laser wavelength. Under both kinds of irradiation ?-SiC shows meaningful chemical and structural stability in highly energetic, aggressive plasma ambient.

L. Gemini; D. Margarone; T. Mocek; F. Neri; S. Trusso; P.M. Ossi

2013-01-01T23:59:59.000Z

454

Microscopic structure, discommensurations, and tiling of Si(111)/Cu-‘‘5×5’’  

Science Journals Connector (OSTI)

We derive a detailed, microscopic description of the Si(111)/Cu-‘‘5×5’’ reconstruction. The key to understanding this structure is the x-ray standing-wave determination of the Cu registry with respect to the Si substrate. With Cu basically in H3 and substitutional sites the buckled Si(111) surface bilayer converts to an almost planar, hexagonal Cu2Si layer. The straightened bond angles and the associated increase in the lateral lattice constant give rise to a hexagonal network of discommensurations of period ?5.5aSi. Complete tiling of the surface requires three types of twisted (±3°) domains, two of which are rotationally equivalent.

J. Zegenhagen; E. Fontes; F. Grey; J. R. Patel

1992-07-15T23:59:59.000Z

455

Hydrogen density of states and defects densities in a-Si:H  

SciTech Connect (OSTI)

The properties of hydrogenated amorphous silicon (a-Si:H) and its devices depend fundamentally on the density of states (DOS) in the gap due to dangling bonds. It is generally believed that the density of dangling bonds is controlled by a chemical equilibrium with the weak Si-Si bonds which form the localized valence band tail states. Further details are given of a unified model of the hydrogen density of states and defect pool of a-Si:H. The model is compared to other defect models and extended to describe a-Si alloys and the creation of valence band tail states during growth.

Deane, S.C.; Powell, M.J. [Philips Research Labs., Redhill, Surrey (United Kingdom); Robertson, J. [Cambridge Univ. (United Kingdom). Engineering Dept.

1996-12-31T23:59:59.000Z

456

Real-time ESR observation during film growth of a-Si:H  

SciTech Connect (OSTI)

In-situ electron-spin-resonance (ESR) measurements of film growth of hydrogenated amorphous silicon (a-Si:H) using a remote hydrogen plasma technique have been performed. The Si dangling-bond signal in a-Si:H during and after deposition has been detected, in addition to the gas-phase ESR signals both of atomic hydrogen and photo-excited SiH{sub x} molecules. Dynamic changes of the Si dangling-bond signal intensity were observed when the deposition started and stopped, which has suggested the existence of a subsurface region with higher spin density than that in the bulk region.

Yamasaki, S.; Umeda, T.; Isoya, J.; Tanaka, K.

1997-07-01T23:59:59.000Z

457

Integration of inverted InGaAs MSM array on Si substrate through low temperature  

E-Print Network [OSTI]

to reduce thermal stress at the interface. Huang et al. [2] presented a thin-film InGaAs MSM PD bonded to Si layers including those on InGaAs MSMs and Si/SiO2 is 860 nm. eching window InP epi-layer SiO2 Si Ti Au Au HCl:H3PO4 (1:1) to open a photodetection window. Citric acid was used to remove the InGaAs etching

Huang, Zhaoran "Rena"

458

Si in GaN -- On the nature of the background donor  

SciTech Connect (OSTI)

A characterization of the Si impurity in GaN is performed by Raman spectroscopy. Applying hydrostatic pressure up to 25 GPa the authors study the behavior of the LO phonon-plasmon mode in a series of high mobility Si doped GaN films. In contrast to earlier results on unintentionally doped bulk GaN crystals no freeze out of the free carriers could be observed in Si doped samples. The authors find that Si is a shallow hydrogenic donor throughout the pressure range studied. This result positively excludes Si incorporation as a dominant source of free electrons in previously studied bulk GaN samples.

Wetzel, C.; Chen, A.L.; Suski, T.; Ager, J.W. III; Walukiewicz, W. [Lawrence Berkeley National Lab., CA (United States). Materials Science Div.

1996-08-01T23:59:59.000Z

459

Search for Lambda-Doubling Transitions of SiH in Orion KL  

E-Print Network [OSTI]

A recent submillimeter line survey of Orion KL claimed detection of SiH. This paper reports on GBT observations of the 5.7 GHz Lambda-doubling transitions of SiH in Orion. Many recombination lines, including C164-delta, are seen, but SiH is not detected. The nondetection corresponds to an upper limit of 1.5 x 10^15 cm^-2 (4 sigma) for the beam-averaged column density of SiH. This suggests that the fractional abundance of SiH in the extended ridge is no more than twice that in the hot core.

Vincent L. Fish

2006-06-20T23:59:59.000Z

460

SiO MASERS IN ASYMMETRIC MIRAS. III. IK TAURI  

SciTech Connect (OSTI)

This is the third paper in a series of multi-epoch observations at 7 mm wavelength of the SiO masers in several asymptotic giant branch stars from a sample of Mira variable stars showing evidence of asymmetric structure in the infrared. These stars have been observed interferometrically in the infrared by Infrared Optical Telescope Array and with Very Long Baseline Array measurements of the SiO masers. In this paper, we present the observations of IK Tauri (IK Tau). There is a persistent elliptical distribution of the masers around the star {approx}40 x {approx}30 mas in size with a major axis at position angle {approx}30 deg. The SiO masers in the circumstellar envelope exhibit large-scale systematic motions which reverse direction on timescales of a decade, roughly the interval between the ejections of dust shells. The orientations on the sky of the apparent rotation-like bulk motion and of the major axis of the maser ellipse differ by 37 deg. (2.5{sigma}) making any relationship uncertain. The systemic velocity of IK Tau is estimated to be 33.3 {+-} 1.0 km s{sup -1}. A comparison is made with the model calculations of Gray et al. which predict some but not all observed features.

Cotton, W. D. [National Radio Astronomy Observatory, 520 Edgemont Road, Charlottesville, VA 22903-2475 (United States); Ragland, S. [W. M. Keck Observatory, 65-1120 Mamalahoa Hwy, Kamuela, HI 96743 (United States); Pluzhnik, E. A. [NASA-Ames Research Center, Moffett Field, CA 94035 (United States); Danchi, W. C. [NASA Goddard Space Flight Center, Exoplanets and Stellar Astrophysics, Code 667, Greenbelt, MD 20771 (United States); Traub, W. A. [Jet Propulsion Laboratory, California Institute of Technology, M/S 301-451, 4800 Oak Grove Dr., Pasadena, CA 91109 (United States); Willson, L. A. [Department of Physics and Astronomy, Iowa State University, Ames, IA 50014 (United States); Lacasse, M. G. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States)], E-mail: bcotton@nrao.edu

2010-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Surface nano-patterning through styrene adsorption on Si(100)  

E-Print Network [OSTI]

We present an ab initio study of the structural and electronic properties of styrene molecules adsorbed on the dimerized Si(100) surface at different coverages, ranging from the single-molecule to the full monolayer. The adsorption mechanism primarily involves the vinyl group via a [2+2] cycloaddition process that leads to the formation of covalent Si-C bonds and a local surface derelaxation, while it leaves the phenyl group almost unperturbed. The investigation of the functionalized surface as a function of the coverage (e.g. 0.5 -- 1 ML) and of the substrate reconstruction reveals two major effects. The first results from Si dimer-vinyl interaction and concerns the controlled variation of the energy bandgap of the interface. The second is associated to phenyl-phenyl interactions, which gives rise to a regular pattern of electronic wires at surface, stemming from the pi-pi coupling. These findings suggest a rationale for tailoring the surface nano-patterning of the surface, in a controlled way.

A. Calzolari; A. Ruini; M. J. Caldas; E. Molinari

2005-07-27T23:59:59.000Z

462

Asia Silicon Qinghai Co Ltd aka Asia Si Material | Open Energy Information  

Open Energy Info (EERE)

Qinghai Co Ltd aka Asia Si Material Qinghai Co Ltd aka Asia Si Material Jump to: navigation, search Name Asia Silicon (Qinghai) Co Ltd (aka Asia Si Material) Place Xining, Qinghai Province, China Zip 810007 Product Developing a 6,000-tonne polysilicon factory in Xining, Qinghai Province, supplier to Suntech. References Asia Silicon (Qinghai) Co Ltd (aka Asia Si Material)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Asia Silicon (Qinghai) Co Ltd (aka Asia Si Material) is a company located in Xining, Qinghai Province, China . References ↑ "Asia Silicon (Qinghai) Co Ltd (aka Asia Si Material)" Retrieved from "http://en.openei.org/w/index.php?title=Asia_Silicon_Qinghai_Co_Ltd_aka_Asia_Si_Material&oldid=342359"

463

In-situ monitoring of surface hydrogen on the a-SiGe:H films  

SciTech Connect (OSTI)

The bonded hydrogen on the growing surface of hydrogenated amorphous silicon germanium (a-SiGe:H) alloy films has been investigated by use of infrared reflection absorption spectroscopy (IR-RAS). When the alloy films are Si-rich, the surface hydrogen bonded to Si atoms is found to behave in a similar way to those on the hydrogenated amorphous silicon (a-Si:H) films. This means that the thermal desorption stability of surface Si hydride species is not significantly affected by the coexistence of a small amount (typically 20 at.%) of Ge. On the contrary, the desorption behavior of surface hydrogen depends on the alloy composition when the a-SiGe:H films are Ge-rich. A surface reaction scheme is provided in an attempt to explain this series of behavior in surface hydrogen on the a-SiGe:H films.

Toyoshima, Y.; Ganguly, G.; Ikeda, T.; Saitoh, K.; Kondo, M.; Matsuda, A.

1997-07-01T23:59:59.000Z

464

Crystal structure of Si-doped HfO{sub 2}  

SciTech Connect (OSTI)

Si-doped HfO{sub 2} was prepared by solid state synthesis of the starting oxides. Using Rietveld refinement of high resolution X-ray diffraction patterns, a substitutional limit of Si in HfO{sub 2} was determined as less than 9 at.?%. A second phase was identified as Cristobalite (SiO{sub 2}) rather than HfSiO{sub 4}, the latter of which would be expected from existing SiO{sub 2}-HfO{sub 2} phase diagrams. Crystallographic refinement with increased Si-dopant concentration in monoclinic HfO{sub 2} shows that c/b increases, while ? decreases. The spontaneous strain, which characterizes the ferroelastic distortion of the unit cell, was calculated and shown to decrease with increasing Si substitution.

Zhao, Lili [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); School of Information Science and Technology, Northwest University, Xi'an 710127 (China); Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Nelson, Matthew; Fancher, Chris M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Aldridge, Henry [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Iamsasri, Thanakorn; Forrester, Jennifer S.; Jones, Jacob L., E-mail: jacobjones@ncsu.edu [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Nishida, Toshikazu [Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States); Moghaddam, Saeed [Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611 (United States)

2014-01-21T23:59:59.000Z

465

Electrical transport properties of Si-doped hexagonal boron nitride epilayers  

SciTech Connect (OSTI)

The suitability of Si as an n-type dopant in hexagonal boron nitride (hBN) wide bandgap semiconductor has been investigated. Si doped hBN epilayers were grown via in-situ Si doping by metal organic chemical vapor deposition technique. Hall effect measurements revealed that Si doped hBN epilayers exhibit n-type conduction at high temperatures (T > 800 K) with an in-plane resistivity of ?12 ?·cm, electron mobility of ? ? 48 cm{sup 2}/V·s and concentration of n ? 1 × 10{sup 16} cm{sup ?3}. Temperature dependent resistivity results yielded a Si energy level in hBN of about 1.2 eV, which is consistent with a previously calculated value for Si substitutionally incorporated into the B sites in hBN. The results therefore indicate that Si is not a suitable dopant for hBN for room temperature device applications.

Majety, S.; Doan, T. C.; Li, J.; Lin, J. Y.; Jiang, H. X., E-mail: hx.jiang@ttu.edu [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409 (United States)

2013-12-15T23:59:59.000Z

466

The role of Pd in the transport of Ag in SiC  

Science Journals Connector (OSTI)

This paper presents results in support of a newly proposed transport mechanism to account for the release of Ag from intact TRISO particles during HTR reactor operation. The study reveals that the migration of Ag in polycrystalline SiC can occur in association with Pd, a relatively high yield metallic fission product. The migration takes place primarily along grain boundary routes, seen in the form of distinct Pd, Ag and Si containing nodules. Pd is known to rapidly migrate to the SiC and iPyC interface within TRISO particles during operation. It has been shown to chemically corrode the SiC to form palladium silicides. These palladium silicides are found present along SiC grain boundaries in nodule like form. It is suggested that Ag penetrates these nodules together with the palladium silicide, to form a Pd, Ag and Si solution capable of migrating along SiC grain boundaries over time.

E.J. Olivier; J.H. Neethling

2013-01-01T23:59:59.000Z

467

Critical Limb Ischemia  

E-Print Network [OSTI]

for treatment from the Transatlantic Inter-Society Workingischemia: rela- tion of TransAtlantic InterSociety Consensusin Table 1. The Transatlantic Inter-Society Consensus

Schanzer, Andres; Conte, Michael S.

2010-01-01T23:59:59.000Z

468

Special features of the excitation spectra and kinetics of photoluminescence of the Si{sub 1-x}Ge{sub x}:Er/Si structures with relaxed heterolayers  

SciTech Connect (OSTI)

Luminescent properties of heteroepitaxial Si{sub 1-x}Ge{sub x}:Er/Si structures with relaxed heterolayers are studied. The results of combined studies of the excitation spectra and kinetics of photoluminescence (PL) are used to single out the components providing the largest contribution to the PL signal of the Si{sub 1-x}Ge{sub x}:Er/Si structures in the wavelength region of 1.54 {mu}m. It is shown that relaxation of elastic stresses in the Si{sub 1-x}Ge{sub x}:Er heterolayer affects only slightly the kinetic characteristics of erbium luminescence and manifests itself in insignificant contribution of the defects and defect-impurity complexes to the luminescent response of the Si{sub 1-x}Ge{sub x}:Er/Si structures. In the excitation spectra of the erbium PL, special features related to the possibility of the rare-earth impurity excitation at energies lower than the band gap of the Si{sub 1} {sub -x}Ge{sub x} solid solution are revealed. It is shown that a peak the width of which depends on the band gap of the solid solution and the extent of its relaxation is observed in the excitation spectra of the erbium-related PL in the Si{sub 1-x}Ge{sub x}:Er/Si structures in the wavelength region of 1040-1050 nm. The observed specific features are accounted for by involvement of intermediate levels in the band gap of the Si{sub 1-x}Ge{sub x}:Er solid solution in the process of excitation of an Er{sup 3+} ion.

Krasilnikova, L. V., E-mail: Luda@ipm.sci-nnov.ru; Yablonskiy, A. N.; Stepikhova, M. V.; Drozdov, Yu. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Shengurov, V. G. [Lobachevsky State University, Physicotechnical Research Institute (Russian Federation); Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2010-11-15T23:59:59.000Z

469

Hybrid Al/SiC Composite Optics for IFE Applications W. Kowbel, MER Corp., Tucson, AZ And M. Tillack, UCSD, La Jolla, CA  

E-Print Network [OSTI]

Hybrid Al/SiC Composite Optics for IFE Applications W. Kowbel, MER Corp., Tucson, AZ And M. Tillack support of the mirror is a SiC composite. The SiC composite is chosen for the following reasons: 1) VeryC-SiC composite. Subsequently, either CVD or PVD Si is deposited as the optical quality layer. The Si coating

Tillack, Mark

470

Theoretical Investigation of the Structure and Coverage of the Si(111)-OCH3 Surface Santiago D. Solares, David J. Michalak, William A. Goddard, III,* and Nathan S. Lewis*  

E-Print Network [OSTI]

from Si(111)-H and methanol is favorable at 300 K. The calculations have also indicated the conditions be divided into those producing surfaces having the functionalized Si in the formal Si(0) oxidation state, with Si-C-R bonding, or those producing surfaces having the functionalized Si in the Si(I) oxidation state

Goddard III, William A.

471

Effect of Al/Si Substitutions and Silanol Nests on the Local Geometry of Si and Al Framework Sites in Silicone-Rich Zeolites: A Combined High Resolution 27  

E-Print Network [OSTI]

Effect of Al/Si Substitutions and Silanol Nests on the Local Geometry of Si and Al Framework Sites in Silicone-Rich Zeolites: A Combined High Resolution 27 Al and 29 Si NMR and Density Functional TheoryVed: May 6, 2009; ReVised Manuscript ReceiVed: June 8, 2009 We employed 29 Si and 27 Al (3Q) magic

Sklenak, Stepan

472

Infrared spectroscopic detection of the disilenyl (Si2H3) and d3-disilenyl (Si2D3) radicals in silane and d4-silane matrices  

E-Print Network [OSTI]

) or disilane (Si2H6) are decomposed by hot filaments or electrons generated within plasmas [9]. During intense vibrational levels of disilane, Si2H6(X1 A1g) [2158 cm�1 , 841­835 cm�1 ] [16], of the disilyl

Kaiser, Ralf I.

473

Corrosion Behaviors of Al-Steel Sputtering-Treated Steel and SiC/SiC Composites in High Temperature LBE at Low Oxygen Concentration  

SciTech Connect (OSTI)

Corrosion tests of Al and SS-304-sputtering-surface treated STBA26 (9Cr.1Mo.0.1Si) and SiC/SiC composites with BN (boron nitride) coating has been conducted in high temperature LBE of 700 deg. C at low oxygen concentration of 6.8 x 10{sup -7} wt% and the behavior was analyzed. The sputtering technique was used to protect the steel from corrosion. The thickness of sputtering-treated layer was 21.45 {mu}m. All specimens were immersed in LBE in a pot for 1000 hours. The STBA26 (9Cr.1Mo.0.1Si) without surface treated were also tested for comparison with sputtering-treated steels. The results showed that sputtering-treated layer still remained on the base of STBA26. No penetration of LBE was observed in this layer. The layer could protect the steel from penetration of LBE. The result also showed that thin layer which contains aluminum oxide and chromium oxide was formed on the surface-treated layer, and it protected the base area. On the contrary, the penetration in base area was observed in the as received STBA26. In SiC/SiC composites, there appeared cracks in a thin surface area and LBE penetrated deeply into the material. The corrosion did not occur in this SiC/SiC composite in the high temperature LBE. (authors)

Abu Khalid Rivai; Minoru Takahashi [Tokyo Institute of Technology (Japan)

2006-07-01T23:59:59.000Z

474

X-ray reflection spectroscopy of the HfO2/SiO2/Si system in the region of the O-K absorption edge  

E-Print Network [OSTI]

profilometry of the sample. By using the Kramers-Kronig analysis, the reflection spectra are transformed on a top of a Si substrate is prepared. The Si substrate is a silicon single-crystal of p-type. The film is prepared by a dry

Boyer, Edmond

475

low Si p+-n junctions fabricated by focused ion beam Ga+ implantation through thin Ti and TiSi2 layers  

E-Print Network [OSTI]

metals and silicide layers, in conjunction with rapid thermal annealing (RTA) to complete metal silicides and it forms uniform thin films on Si. Most of the current research involving salicide+ implantation through Ti metal (ITM) and TiSi, (ITS) layers, followed by rapid thermal annealing (RTA), has been

Steckl, Andrew J.

476

Stability and dynamics of Pt-Si liquid microdroplets on Si,,001... W.-C. Yang, H. Ade, and R. J. Nemanich*  

E-Print Network [OSTI]

transforms the thin film into silicide island structures.1 For some metal-Si (M-Si) systems . For these systems the metallic silicide islands will be in a liquid state at temperatures above the eutectic.1103/PhysRevB.69.045421 PACS number s : 68.08. p, 68.37.Nq I. INTRODUCTION It is well known that thin metal

477

Modeling of damage in unidirectional ceramic matrix composites and multi-scale experimental validation on third generation SiC/SiC minicomposites  

E-Print Network [OSTI]

1 Modeling of damage in unidirectional ceramic matrix composites and multi-scale experimental stresses in fibers and matrix in the undamaged composite interfacial shear stress interfacial shear stress validate a 1D probabilistic model of damage evolution in unidirectional SiC/SiC composites. The key point

Paris-Sud XI, Université de

478

Synthesis and characterization of pristine Li2MnSiO4 and Li2MnSiO4/C cathode materials for lithium ion batteries  

Science Journals Connector (OSTI)

Pristine Li2MnSiO4 and Li2MnSiO4.../C were both prepared by the sol–gel method. Citric acid was used as the carbon source. Lithium acetate dihydrate, manganese acetate tetrahydrate, and citric acid were first dis...

Qianqian Zhang; Quanchao Zhuang; Shoudong Xu; Xiangyun Qiu; Yongli Cui; Yueli Shi…

2012-05-01T23:59:59.000Z

479

1. Dumont, Grard-Franois, La France et l'Iran : des nations si lointaines et si proches , Gostratgiques, n 10,  

E-Print Network [OSTI]

1. Dumont, Gérard-François, « La France et l'Iran : des nations si lointaines et si proches Arménie �mirats ar. unis Turkménistan Azerbaïdjan Arabie saoudite Irak Afghanistan Iran 71,2 69,2 31,9 31

Paris-Sud XI, Université de

480

Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets  

SciTech Connect (OSTI)

This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409?nm/min for SiC and 2381?nm/min for GaSb. The maximum sputtering rate for GaN is 630?nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2?nm and 20?nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60?nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target.

Borrajo-Pelaez, Rafael; Grustan-Gutierrez, Enric; Gamero-Castaño, Manuel, E-mail: mgameroc@uci.edu [Department of Mechanical and Aerospace Engineering, University of California, Irvine, California 92697 (United States)

2013-11-14T23:59:59.000Z

Note: This page contains sample records for the topic "tran si tion" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

ITO, Si3N4 and ZnO: Al -- Simulation of Different Anti-reflection Coatings (ARC) for Thin Film a-Si:H Solar Cells  

Science Journals Connector (OSTI)

For thin film solar cells incorporating amorphous silicon (a-Si:H) as absorber materials, minimizing reflection from the top surface i.e. maximizing transmittance of the incoming light into the absorber for higher absorption plays an important role for ... Keywords: ARC, TCO, ITO, Si3N4, ZnO:Al, Solar cell

Kazi Islam; Aaesha Alnuaimi; Helmy Ally; Ammar Nayfeh

2013-11-01T23:59:59.000Z

482

Fragmentation cross sections of 28Si at beam energies from 290A MeV to 1200A MeV  

E-Print Network [OSTI]

methods, we present here charge-changing and fragment production cross sec- tions for charges from 6 to 13, on targets ranging from hydrogen

2006-01-01T23:59:59.000Z

483

Si nous appelons Sx et S2 les distances respectives entre les pics 1 et 2 d'une part, 5 et 6 d'autre part, le  

E-Print Network [OSTI]

metalliques par r6due- tion d'halog6nures a haute temperature est devenue une methode classique d'obtention de

Paris-Sud XI, Université de

484

The interfacial reaction of Ni on (100) Si?â??xGex (x=0, 0.25) and (111) Ge  

E-Print Network [OSTI]

The interfacial reaction of Ni with Si, Si?.??Ge?.??, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, ...

Jin, Lijuan

485

Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers , M. J. Loboda1)  

E-Print Network [OSTI]

Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers G. Chung1) , M. J. Loboda comparative studies of recombination and carrier lifetimes in SiC. For the first time, both generation-wafer structures. The ratio of the generation to recombination lifetime is much different in SiC compared to Si

Schroder, Dieter K.

486

Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature  

Science Journals Connector (OSTI)

Structural properties of SiGe/Si single wells are studied by double-crystal X-ray diffraction. Four SiGe/Si single wells have been grown on Si (0 0 1) at 750°C by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature. Using dynamic theory, together with kinematic theory and the specific growth procedure adopted, structural parameters in the multilayer structure are determined precisely. The results are compared with those obtained from PL and XTEM as well as AES measurements. It is found that disilane adsorption is dependent on cracking temperature as well as Ge incorporation. Disilane adsorption is increased by cracking disilane while it decreased with Ge incorporation

J.P. Liu; M.Y. Kong; D.D. Huang; J.P. Li; D.Z. Sun

1998-01-01T23:59:59.000Z

487

Changes of defect and active-dopant concentrations induced by annealing of highly Si-doped GaAs  

Science Journals Connector (OSTI)

We identified point defects and dopant atoms and measured their concentrations in as-grown and post-growth annealed highly Si-doped GaAs by scanning tunneling microscopy. The annealing under As atmosphere reduces the concentration of Si atoms incorporated into Si pairs and clusters by cluster dissolution, while the concentrations of Si donors, Si donor–Ga vacancy complexes, and Si donor–As vacancy complexes increase. For the dissolution of the Si clusters during heat treatment, a Ga-vacancy-mediated mechanism is suggested.

C. Domke, Ph. Ebert, and K. Urban

1998-02-15T23:59:59.000Z

488

Reactivity measurements of SiC for accident-tolerant fuel  

Science Journals Connector (OSTI)

Abstract Silicon carbide (SiC) is a candidate structural material for application with accident-tolerant fuel for light water reactors, which is expected to decrease heat and hydrogen generation resulting from oxidation reaction with high-temperature steam. Although there are studies on irradiation properties of SiC for fusion reactors and gas-cooled reactors, there are no published reports on critical experiments to validate the nuclear reactivity of SiC. We performed SiC nuclear reactivity measurements. Measured reactivity worths of SiC were analyzed by a continuous-energy Monte Carlo code MCNP4c3. We obtained the neutron spectrum-dependent reactivity worths of SiC samples, which imply that the neutron scattering with SiC plays an important role concerning the reactivity worths as well as neutron absorption with SiC. Comparison of analyses with measurements reveals the possibility of room for improvement in SiC cross-sections mainly related to neutron scattering, whereas thermal neutron absorption cross-sections of SiC can well describe the experimental results.

Hiroshi Matsumiya; Kenichi Yoshioka; Tsukasa Kikuchi; Tsukasa Sugita; Shinichi Higuchi; Noriyuki Yoshida

2014-01-01T23:59:59.000Z

489

Lattice-engineered Si{sub 1-x}Ge{sub x}-buffer on Si(001) for GaP integration  

SciTech Connect (OSTI)

We report a detailed structure and defect characterization study on gallium phosphide (GaP) layers integrated on silicon (Si) (001) via silicon-germanium (SiGe) buffer layers. The presented approach uses an almost fully relaxed SiGe buffer heterostructure of only 400?nm thickness whose in-plane lattice constant is matched to GaP—not at room but at GaP deposition temperature. Single crystalline, pseudomorphic 270?nm thick GaP is successfully grown by metalorganic chemical vapour deposition on a 400?nm Si{sub 0.85}Ge{sub 0.15}/Si(001) heterosystem, but carries a 0.08% tensile strain after cooling down to room temperature due to the bigger thermal expansion coefficient of GaP with respect to Si. Transmission electron microscopy (TEM) studies confirm the absence of misfit dislocations in the pseudomorphic GaP film but growth defects (e.g., stacking faults, microtwins, etc.) especially at the GaP/SiGe interface region are detected. We interpret these growth defects as a residue of the initial 3D island coalescence phase of the GaP film on the SiGe buffer. TEM-energy-dispersive x-ray spectroscopy studies reveal that these defects are often correlated with stoichiometric inhomogeneities in the GaP film. Time-of-flight Secondary ion mass spectrometry detects sharp heterointerfaces between GaP and SiGe films with a minor level of Ga diffusion into the SiGe buffer.

Skibitzki, Oliver, E-mail: skibitzki@ihp-microelectronics.com; Zaumseil, Peter; Yamamoto, Yuji; Andreas Schubert, Markus [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Paszuk, Agnieszka; Hannappel, Thomas [Technische Universität Ilmenau, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany); Hatami, Fariba; Ted Masselink, W. [Institut für Physik, Humboldt Universität zu Berlin, Newtonstrasse 15, 12489 Berlin (Germany); Trampert, Achim [Paul Drude Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Tillack, Bernd [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Technische Universität Berlin, HFT4, Einsteinufer 25, 10587 Berlin (Germany); Schroeder, Thomas [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Brandenburgische Technische Universität, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

2014-03-14T23:59:59.000Z

490

RECOMBINATION RATE COEFFICIENTS OF Be-LIKE Si  

SciTech Connect (OSTI)

Recombination of Be-like Si{sup 10+} over the 0-43 eV electron-ion energy range is measured at the CRYRING electron cooler. In addition to radiative and dielectronic recombination, the recombination spectrum also shows strong contributions from trielectronic recombination. Below 100 meV, several very strong resonances associated with a spin-flip of the excited electron dominate the spectrum and also dominate the recombination in the photoionized plasma. The resonant plasma rate coefficients corrected for the experimental field ionization are in good agreement with calculated results by Gu and with AUTOSTRUCTURE calculations. All other calculations significantly underestimate the plasma rate coefficients at low temperatures.

Orban, I.; Boehm, S.; Schuch, R. [Department of Physics, Stockholm University, 10691 Stockholm (Sweden); Loch, S. D. [Department of Physics, Auburn University, Auburn, AL 36849 (United States)

2010-10-01T23:59:59.000Z

491

Rotational-vibrational transitions of interstitial HD in Si  

Science Journals Connector (OSTI)

The ir spectrum of interstitial HD in Si provides unique insight into the rotational motion of interstitial H2 because the rotational-vibrational transitions for the heteronuclear HD molecule are subject to less restrictive selection rules. ir lines for transitions between rotational-vibrational states of the interstitial HD molecule with rotational quantum numbers J=0, 1, and 2 have been observed. The assignment of the rotational-vibrational spectrum of interstitial HD, with additional transitions that occur for HD but not for H2 or D2, is confirmed by uniaxial stress results.

G. Alvin Shi; Michael Stavola; W. Beall Fowler; E Elinor Chen

2005-08-03T23:59:59.000Z

492

Diamond turning of Si and Ge single crystals  

SciTech Connect (OSTI)

Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

Blake, P.; Scattergood, R.O.

1988-12-01T23:59:59.000Z

493

Laser-induced fluorescence measurements and kinetic analysis of Si atom formation in a rotating disk chemical vapor deposition reactor  

SciTech Connect (OSTI)

An extensive set of laser-induced fluorescence (LIF) measurements of Si atoms during the chemical vapor deposition (CVD) of silicon from silane and disilane in a research rotating disk reactor are presented. The experimental results are compared in detail with predictions from a numerical model of CVD from silane and disilane that treats the fluid flow coupled to gas-phase and gas-surface chemistry. The comparisons showed that the unimolecular decomposition of SiH[sub 2] could not account for the observed gas-phase Si atom density profiles. The H[sub 3]SiSiH [leftrightarrow] Si + SiH[sub 4] and H[sub 3]SiSiH + SiH[sub 2] [leftrightarrow] Si + Si[sub 2]H[sub 6] reactions are proposed as the primary Si atom production routes. The model is in good agreement with the measured shapes of the Si atom profiles and the trends in Si atom density with susceptor temperature, pressure, and reactant gas mixture. 33 refs., 12 figs., 3 tabs.

Ho, P.; Coltrin, M.E.; Breiland, W.G. (Sandia National Lab., Albuquerque, NM (United States))

1994-10-06T23:59:59.000Z

494

Silicate layer formation at Pr{sub 2}O{sub 3}/Si(001) interfaces  

SciTech Connect (OSTI)

We studied Pr{sub 2}O{sub 3}/Si(001) interfaces by synchrotron radiation photoelectron spectroscopy and by ab initio calculations. We show that the interface formed during molecular-beam epitaxy under the oxygen partial pressure above 1x10{sup -8} mbar consists of a mixed Si-Pr oxide, such as (Pr{sub 2}O{sub 3})(SiO){sub x}(SiO{sub 2}){sub y}. Neither an interfacial SiO{sub 2} nor an interfacial silicide is formed. The silicate formation is driven by a low energy of O in a PrOSi bond and by the strain in the subsurface SiO{sub x} layer. We expect that this natural interfacial Pr silicate will facilitate the integration of the high-k dielectric Pr{sub 2}O{sub 3} into future complementary metal-oxide-semiconductor technologies.

Schmeisser, D.; Muessig, H.-J.; Dabrowski, J. [Angewandte Physik-Sensorik, BTU Cottbus, Postfach 10 13 44, D-03013 Cottbus (Germany); IHP, Im Technologiepark 25, D-15236 Frankfurt (Germany)

2004-07-05T23:59:59.000Z

495

Secondary ion emission from Si bombarded with large Ar cluster ions under UHV conditions  

Science Journals Connector (OSTI)

Si was bombarded with size-selected 40 keV Ar cluster ions and positive secondary ions were measured using the time-of-flight technique under high and ultra-high vacuum (HV and UHV respectively) conditions. Si+ ions were main species detected under the incidence of 40 keV Ar cluster ions, and the yields of Si cluster ions such as Si4+ were also extremely high under both conditions. On the other hand, oxidized secondary ions such as SiO+ were detected with high intensity only under the HV condition. The yield ratios of oxidized ions decreased in UHV to less than 1% of their values in HV. The effect of residual gas pressure on Si cluster ion yields is relatively low compared to oxidized ions, and the UHV condition is required to obtain accurate secondary ion yields.

Satoshi Ninomiya; Kazuya Ichiki; Yoshihiko Nakata; Yoshiro Honda; Toshio Seki; Takaaki Aoki; Jiro Matsuo

2008-01-01T23:59:59.000Z

496

Synthesis of One-Dimensional SiC Nanostructures from a Glassy Buckypaper  

SciTech Connect (OSTI)

A simple and scalable synthetic strategy was developed for the fabrication of one-dimensional SiC nanostructures - nanorods and nanowires. Thin sheets of single-walled carbon nanotubes (SWNTs) were prepared by vacuum filtration and were washed repeatedly with sodium silicate (Na{sub 2}SiO{sub 3}) solution. The resulting “glassy buckypaper” was heated at 1300 - 1500 °C under Ar/H{sub 2} to allow a solid state reaction between C and Si precursors to form a variety of SiC nanostructures. The morphology and crystal structures of SiC nanorods and nanowires were characterized using scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), energy dispersive xray spectroscopy (EDX), electron diffraction (ED) and x-ray diffraction (XRD) techniques. Furthermore, electrical conductance measurements were performed on SiC nanorods, demonstrating their potential applications in high-temperature sensors and control systems.

Ding, Mengning; Star, Alexander

2013-03-27T23:59:59.000Z

497

Refinement of Mg{sub 2}Si reinforcement in a commercial Al–20%Mg{sub 2}Si in-situ composite with bismuth, antimony and strontium  

SciTech Connect (OSTI)

Refinement by addition elements of Al–Mg{sub 2}Si alloys is known to result in a change of primary Mg{sub 2}Si morphology. In this paper, the effects of Bi, Sb and Sr on the characteristic parameters of Al–20%Mg{sub 2}Si in-situ composite have been investigated by computer aided cooling curve thermal analysis and microstructural inspection. Size, density and aspect ratio measurements showed that additions of 0.4 wt.% Bi, 0.8 wt.% Sb and 0.01 wt.% Sr refined the Mg{sub 2}Si reinforcement. Exceeding these concentrations, however, resulted in coarsening of Mg{sub 2}Si particles with no change in the morphology. The results also showed that addition elements caused a decrease in the nucleation and growth temperatures of Mg{sub 2}Si particles. The refining effect of Bi, Sb and Sr is likely to be related to the effect of oxide bifilms suspended in the composite melt as favored nucleation substrates for Mg{sub 2}Si particles. - Highlight: • 0.4 wt.%, 0.8 wt.% and 0.01 wt.% is the optimum content for Bi, Sb and Sr addition. • Exceeding optimum concentration resulted in the coarsening of reinforcements. • Nucleation and growth temperatures decrease with addition of Bi, Sb and Sr. • The refining effect of Bi, Sb and Sr is likely to be related to the oxide bifilms.

Nordin, Nur Azmah; Farahany, Saeed, E-mail: saeedfarahany@gmail.com; Ourdjini, Ali; Abu Bakar, Tuty Asma; Hamzah, Esah

2013-12-15T23:59:59.000Z

498

Erosion resistance of continuously reinforced SiC–Ti-based metal matrix composites by a SiC/water slurry jet  

Science Journals Connector (OSTI)

The erosion of a continuously reinforced SiC (Sigma 1140 plus)/Ti–6Al–4V composite was investigated with a SiC/water slurry jet at various angles on a plane perpendicular to the direction of the reinforcement. The results demonstrate the combination of both ceramic and metallic properties. Both the low-angle erosion resistance of ceramics as well as the high-angle resistance of a metallic alloy lead to an overall reduction in erosion rate at the various angles. Ti/SiC composite shows the best erosive wear resistance indicating that the combination effect between ductile Ti-based matrix and high strength SiC fibre for continuously fibre-reinforced Ti-based metal matrix composites (MMCs) plays a key role in increasing the erosive resistance. To gain a better understanding of the combination and synergistic enhancement of erosion resistance for two components in SiC/Ti composite materials, a shadowing effect and effect of reducing impact energy on SiC fibre during erosion are discussed. A simple theoretical model based on experimental data and a modified inverse rule-of-mixtures averaging law of erosion resistance for SiC fibre-reinforced \\{MMCs\\} are discussed.

Q Fang; P.S Sidky; G.M Hocking

1999-01-01T23:59:59.000Z

499

Solubility of methane in cyclohexane and in trans-decalin at temperatures from 323 to 423 K at pressures to 9.6 MPa  

SciTech Connect (OSTI)

Solubility data are presented for methane in the naphthenic solvents cyclohexane and trans-decalin (decahydronaphthalene) at temperatures from 323 to 423 K and pressures to 9.6 MPa. The data for methane + cyclohexane are in reasonable agreement with the measurements of Reamer et al. but differ significantly from some of the data of Schoch et al. The new data can be described with root-mean-square errors of about 0.0005 mole fraction by the Soave-Redlich-Kwong and Peng-Robinson equations of state when a single interaction parameter per isotherm is employed in the equations. Addition of a second interaction parameter provides little improvement in the quality of representation of the data.

Darwish, N.A. [Jordan Univ. of Science and Technology, Irbid (Jordan). Dept. of Chemical Engineering] [Jordan Univ. of Science and Technology, Irbid (Jordan). Dept. of Chemical Engineering; Gasem, K.A.M.; Robinson, R.L. Jr. [Oklahoma State Univ., Stillwater, OK (United States). School of Chemical Engineering] [Oklahoma State Univ., Stillwater, OK (United States). School of Chemical Engineering

1998-03-01T23:59:59.000Z

500

OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR Xunming Deng  

E-Print Network [OSTI]

at the University of Toledo (UT) in the fabrication of high-efficiency triple, tandem and single-junction solar with 12.5% initial efficiency and 10.7% stable efficiency, tandem-junction a-Si/a-SiGe solar cells with 12.9% initial efficiency, and single-junction a-SiGe solar cells with 12.5-13% initial efficiency and 10

Deng, Xunming