Sample records for tran si tion

  1. commercializaTion office Agriculture

    E-Print Network [OSTI]

    Arnold, Jonathan

    Technology commercializaTion office Agriculture ·Biotechnology ·Blueberries ·Cotton ·Forages Utilization, Renewable Energy ·Algalbiofuels ·Biodiesel ·Biomassengineering ·Biomasspre,skincare,andwoundhealing ·Vaccines Information Technology ·Bioinformaticstools ·Imagerenderingandenhancement ·3

  2. being activate tion Email tha

    E-Print Network [OSTI]

    McLaughlin, Richard M.

    and Fall 201 n on logging t, search for c mer I and II 2 2014 term: M ment nter. her the Open nd click Review the being activate tion Email tha r to view your t is helpful to cheduled term cheduled term Check your o to your Con ocate the Enr epending on nk. Click on t elect the term ppointment d Tips for O

  3. si

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA groupTuba City, Arizona, DisposalFourthN V4100U.S. Department of Energy3si :ri;

  4. Cluster formation probability in the trans-tin and trans-lead nuclei

    E-Print Network [OSTI]

    K. P. Santhosh; R. K. Biju; Sabina Sahadevan

    2010-05-10T23:59:59.000Z

    Within our fission model, the Coulomb and proximity potential model (CPPM) cluster formation probabilities are calculated for different clusters ranging from carbon to silicon for the parents in the trans-tin and trans- lead regions. It is found that in trans-tin region the 12^C, 16^O, 20^Ne and 24^Mg clusters have maximum cluster formation probability and lowest half lives as compared to other clusters. In trans-lead region the 14^C, 18, 20^O, 23^F, 24,26^Ne, 28,30^Mg and 34^Si clusters have the maximum cluster formation probability and minimum half life, which show that alpha like clusters are most probable for emission from trans-tin region while non-alpha clusters are probable from trans-lead region. These results stress the role of neutron proton symmetry and asymmetry of daughter nuclei in these two cases.

  5. Scaling of SiGe Heterojunction Bipolar Transistors

    E-Print Network [OSTI]

    Rieh, Jae-Sung

    Scaling of SiGe Heterojunction Bipolar Transistors JAE-SUNG RIEH, SENIOR MEMBER, IEEE, DAVID-century. This paper inves- tigates the impacts of scaling on SiGe heterojunction bipolar tran- sistors (HBTs), which), epitaxial-base Si BJTs (Epi Si BJT), SiGe HBTs (SiGe HBT), and SiGe HBTs with carbon-doped base (SiGeC HBT

  6. MAGNETOHYDRODYNAMIC AND THERMAL ISSUES OF THE SiCf0SiC FLOW CHANNEL INSERT

    E-Print Network [OSTI]

    Abdou, Mohamed

    ) made of a silicon carbide composite (SiCf /SiC), which serves as electric and thermal insulator considered. The computa- tions were performed in a parametric form, using the electric and thermal. INTRODUCTION Flow channel inserts ~FCIs! made of a silicon car- bide composite ~SiCf 0SiC! were first proposed

  7. Spectroscopy and theory of cis-trans isomerization in the S? state of acetylene

    E-Print Network [OSTI]

    Changala, P. Bryan (Peter Bryan)

    2013-01-01T23:59:59.000Z

    This thesis consists of parallel experimental and theoretical studies of the rovibrational structure and dynamics of the Si state of acetylene, C2H2 . This small molecule is a prototypical system for the study of cis-trans ...

  8. he agricultural sector is rapidly being trans-formed into an industry of major importance

    E-Print Network [OSTI]

    Antsaklis, Panos

    T he agricultural sector is rapidly being trans- formed into an industry of major importance, with superior performance in most cases. To manage the increasing complexity of agricultural systems agri- culture, where the goal is to improve the efficiency of opera- tion of agricultural enterprises

  9. TransBorder 2035 Metropolitan Transportation Plan

    E-Print Network [OSTI]

    El Paso Metropolitan Planning Organization

    2007-11-16T23:59:59.000Z

    i TransBorder 2035 Metropolitan Transportation Plan November 16, 2007 El Paso Metropolitan Planning Organization www.elpasompo.org ii TransBorder 2035 Metropolitan Transportation Plan November 16, 2007... El Paso Metropolitan Planning Organization www.elpasompo.org iii TransBorder 2035 Metropolitan Transportation Plan November 16, 2007 El Paso Metropolitan Planning Organization www.elpasompo.org iv Trans...

  10. Aqueous, Room Temperature Electrochemical Deposition of Compact Si Films

    E-Print Network [OSTI]

    Suni, Ian Ivar

    . For all Si deposi- tion experiments, the Al sample was rotated at 850 rpm with a rotat- ing disc electrode scanning electron microscope (FESEM), following Au=Pd sputtering. X-ray diffraction measure- ments were

  11. tion des environs par quatre groupes prin-cipaux de polluants : i) les hydrocarbures

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    tion des environs par quatre groupes prin- cipaux de polluants : i) les hydrocarbures aromatiques simples; ii) les hydrocarbures aliphatiques ; iii) les hydrocarbures aroma- tiques polycycliques (HAP

  12. 476 IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 18, NO. 7, JULY 2008 SiGe HBT X-Band LNAs for Ultra-Low-Noise

    E-Print Network [OSTI]

    Weinreb, Sander

    476 IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 18, NO. 7, JULY 2008 SiGe HBT X-Band LNAs-germanium (SiGe) heterojunc- tion bipolar transistor low noise amplifiers (LNAs) implemented in a commercially-available 130 nm SiGe BiCMOS platform. These SiGe LNAs exhibit a dramatic reduction in noise temperature

  13. EFRIGERATION OF FISH -PART 4 PRE PARA TION, FRE EZI NG,

    E-Print Network [OSTI]

    EFRIGERATION OF FISH - PART 4 PRE PARA TION, FRE EZI NG, AND COLD STORAGE OF FISH, SHELLFISH Washington 25, D. C. 1956 REFRI GERATION OF FISH: PART FOUR PREPARATION, FREEZING, AND COLD STORAGE OF FISH

  14. TransWest Old | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlin Baxin Hydropower StationTown ofTown ofTownTransCanada PowerTransWest

  15. Biotransformation of trans-1-chloro-3,3,3-trifluoropropene (trans-HCFO-1233zd)

    SciTech Connect (OSTI)

    Schmidt, Tobias [Institut fr Toxikologie, Universitt Wrzburg, Versbacher Str. 9, 97078 Wrzburg (Germany); Bertermann, Rdiger [Institut fr Anorganische Chemie, Universitt Wrzburg, Am Hubland, 97074 Wrzburg (Germany); Rusch, George M.; Tveit, Ann [Honeywell, P.O. Box 1057, Morristown, NJ 07962-1057 (United States); Dekant, Wolfgang, E-mail: dekant@toxi.uni-wuerzburg.de [Institut fr Toxikologie, Universitt Wrzburg, Versbacher Str. 9, 97078 Wrzburg (Germany)

    2013-05-01T23:59:59.000Z

    trans-1-Chloro-3,3,3-trifluoropropene (trans-HCFO-1233zd) is a novel foam blowing and precision cleaning agent with a very low impact for global warming and ozone depletion. trans-HCFO-1233zd also has a low potential for toxicity in rodents and is negative in genotoxicity testing. The biotransformation of trans-HCFO-1233zd and kinetics of metabolite excretion with urine were assessed in vitro and in animals after inhalation exposures. For in vitro characterization, liver microsomes from rats, rabbits and humans were incubated with trans-HCFO-1233zd. Male Sprague Dawley rats and female New Zealand White rabbits were exposed to 2,000, 5,000 and 10,000 ppm for 6 h and urine was collected for 48 h after the end of the exposure. Study specimens were analyzed for metabolites using {sup 19}F NMR, LC-MS/MS and GC/MS. S-(3,3,3-trifluoro-trans-propenyl)-glutathione was identified as predominant metabolite of trans-HCFO-1233zd in all microsomal incubation experiments in the presence of glutathione. Products of the oxidative biotransformation of trans-HCFO-1233zd were only minor metabolites when glutathione was present. In rats, both 3,3,3-trifluorolactic acid and N-acetyl-(3,3,3-trifluoro-trans-propenyl)-L-cysteine were observed as major urinary metabolites. 3,3,3-Trifluorolactic acid was not detected in the urine of rabbits. Quantitation showed rapid excretion of both metabolites in both species (t{sub 1/2} < 6 h) and the extent of biotransformation of trans-HCFO-1233zd was determined as approximately 0.01% of received dose in rabbits and approximately 0.002% in rats. trans-HCFO-1233zd undergoes both oxidative biotransformation and glutathione conjugation at very low rates. The low extent of biotransformation and the rapid excretion of metabolites formed are consistent with the very low potential for toxicity of trans-HCFO-1233zd in mammals. - Highlights: ? No lethality and clinical signs were observed. ? Glutathione S-transferase and cytochrome P-450 dependent biotransformation in vivo. ? Low biotransformation (< 0.01%) and fast metabolite excretion (t{sub 1/2} < 6 h). ? Glutathione adduct as predominant in vitro metabolite in all tested species. ? Toxic metabolites could not be detected in any great extent.

  16. FischerTropsch synthesis on a model Co/SiO2 catalyst , Zhoujun Wang a

    E-Print Network [OSTI]

    Goodman, Wayne

    FischerTropsch synthesis on a model Co/SiO2 catalyst Zhen Yan a , Zhoujun Wang a , Dragomir B Keywords: Model catalyst Cobalt catalyst Silica FischerTropsch synthesis a b s t r a c t A model Co/SiO2 catalyst was prepared by depositing cobalt on silica films in ultrahigh vacuum condi- tions. FischerTropsch

  17. DIGITAL CHROMATOGRAPHY AND THE FORMA-TION OF HETEROGENEOUS DROPLET LIBRARIES

    E-Print Network [OSTI]

    Basu, Amar S.

    DIGITAL CHROMATOGRAPHY AND THE FORMA- TION OF HETEROGENEOUS DROPLET LIBRARIES USING University, Detroit MI, USA ABSTRACT Generating chemical libraries in droplet form is vital to the adoption in droplets (FD), a method for generating heterogeneous droplet libraries using standard separation processes

  18. Hand gestures for medical applica-tions provide an expressive, natural

    E-Print Network [OSTI]

    Wachs, Juan

    members to increasingly interact with medical equipment and computer systems. These advances haveHand gestures for medical applica- tions provide an expressive, natural and intuitive way reviews the highlights of a novel gesture-based system for medical image browsing in the OR called Gestix

  19. Calorimetric investigations on thermoregula-tion and growth of wax moth larvae (Galleria

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    Calorimetric investigations on thermoregula- tion and growth of wax moth larvae (Galleria mellonella) The larvae of the wax moth Galleria mellonella are living in honeybee colonies where they feed on wax, honey, pollen and other organic matter. Mass-invasions of larvae can occur in weak bee colonies

  20. maintenance. This research is relevant to opera-tions and maintenance challenges facing aging

    E-Print Network [OSTI]

    the need for preventive maintenance or other diagnostic activities on the physical system. Simulationsmaintenance. This research is relevant to opera- tions and maintenance challenges facing aging-benefit of extending the time between overhauls. reducing the probability of a failure in the field. and preventive

  1. China For all ages a MulTi-generaTional exPloraTion

    E-Print Network [OSTI]

    Rowley, Clarence W.

    China For all ages a MulTi-generaTional exPloraTion The greaT Wall, TerraCoTTa Warriors & The MighCTuresque China Experience the Delights of a Well-Crafted Family Tour Dear Princetonian, Join Princeton Journeys, June 27 July 9, 2013, for a comprehensive tour of China designed with families in mind. Explore

  2. 542 IEEE ELECTRON DEVICE LETTERS, VOL. 22, NO. 11, NOVEMBER 2001 A 210-GHz fT SiGe HBT With a

    E-Print Network [OSTI]

    Rieh, Jae-Sung

    542 IEEE ELECTRON DEVICE LETTERS, VOL. 22, NO. 11, NOVEMBER 2001 A 210-GHz fT SiGe HBT With a Non. Subbanna Abstract--A record 210GHz SiGe heterojunction bipolar transistor at a collector current density by telecommunication systems. The viable materials of choice for the implementa- tion of these systems include Si(Ge

  3. Disordered electronic and magnetic systems - transition metal (Mn) and rare earth (Gd) doped amorphous group IV semiconductors (C, Si, Ge)

    E-Print Network [OSTI]

    Zeng, Li

    2007-01-01T23:59:59.000Z

    Magnetization data for a-Mn 0.15 Ge 0.85 ?lms mea- suredSi 1?x and a-Mn x Ge 1?x samples. . . . . . . . . . . . . .both a-Mn x Si 1?x and a-Mn x Ge 1?x as a func- tion of Mn

  4. Electronic and Molecular Structures of trans-Dioxotechnetium...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hightower, JA Krause, B Twamley, BP Sullivan, C Reber, WR Heineman, CJ Seliskar, and SA Bryan.2011."Electronic and Molecular Structures of trans-Dioxotechnetium(V) Polypyridyl...

  5. Trans Tech Green Power | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTown of Ladoga, Indiana (Utility Company) JumpTradeWind Energy LLCOpenTrans Tech

  6. Using HyTrans to Study H2 Transition Scenarios | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Using HyTrans to Study H2 Transition Scenarios Using HyTrans to Study H2 Transition Scenarios Presentation on Using HyTrans to Study H2 Transition Scenarios given by David Greene...

  7. Preparation and Characterization of Chitosan-Alginate Nanoparticles for Trans-Cinnamaldehyde Entrapment

    E-Print Network [OSTI]

    Loquercio, Andre S

    2014-11-04T23:59:59.000Z

    Trans-cinnamaldehyde incorporated chitosan and alginate nanoparticles were synthesized using the ionic gelation and polyelectrolyte complexation technique. Alginate, chitosan, calcium chloride, and trans-cinnamaldehyde at predetermined...

  8. Valley splitting theory of SiGe/Si/SiGe quantum wells Mark Friesen,1,

    E-Print Network [OSTI]

    Coppersmith, Susan N.

    Valley splitting theory of SiGe/Si/SiGe quantum wells Mark Friesen,1, * Sucismita Chutia,1 Charles an effective mass theory for SiGe/Si/SiGe quantum wells, with an emphasis on calculating the valley splitting interface, with characteristic energy splittings of order 0.11 meV for the case of SiGe/Si/SiGe quantum

  9. ORIGINAL PAPER Selection, trans-species polymorphism, and locus identification

    E-Print Network [OSTI]

    Zamudio, Kelly R.

    ORIGINAL PAPER Selection, trans-species polymorphism, and locus identification of major amphibian populations. Keywords Amphibia . Beta chain . Gene walking . Lithobates . Positive selection balancing selection Electronic supplementary material The online version of this article (doi:10.1007/s00251

  10. Luminescence from the trans-Dioxotechnetium(V) Chromophore. ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AS, Z Wang, CJ Seliskar, WR Heineman, BP Sullivan, SE Hightower, TL Hubler, and SA Bryan.2005."Luminescence from the trans-Dioxotechnetium(V) Chromophore."Journal of the...

  11. A comment on trans-Planckian physics in inflationary universe

    E-Print Network [OSTI]

    Takahiro Tanaka

    2001-02-21T23:59:59.000Z

    There are several works searching for a clue of trans-Planckian physics on the primordial density perturbation spectrum. Here we would like to point out an important aspect which has been overlooked so far. When we consider a model in which the primordial density perturbation spectrum is modified due to trans-Planckian physics, the energy density of fluctuations of the inflaton field necessarily becomes significantly large, and hence its back reaction to the cosmic expansion rate cannot be neglected.

  12. he Web, as we know it, is a collec-tion of human-readable pages that

    E-Print Network [OSTI]

    Yu, Bin

    of languages such as the Resource Description Framework (RDF), DAML+OIL, and the more recent Web OntologyT he Web, as we know it, is a collec- tion of human-readable pages that are virtually Web and proposed industry standards for Web services. The SemanticWeb forWeb Services One objective

  13. tions (Fig. 4). The layer thicknesses observed (a 0.90 m for the 400-m fibers; a

    E-Print Network [OSTI]

    Romanowicz, Barbara

    geometry. References and Notes 1. P. Yeh, A. Yariv, E. Marom, J. Opt. Soc. Am. 68, 1196 (1978). 2. J. W. D. Joannopoulos, Opt. Lett. 23, 1573 (1998). 7. P. Yeh, A. Yariv, C. Hong, J. Opt. Soc. Am. 67, 423tions (Fig. 4). The layer thicknesses observed (a 0.90 m for the 400- m fibers; a 0.45 m

  14. SiNode Systems

    Broader source: Energy.gov [DOE]

    SiNode Systems is a battery materials venture developing silicon-graphene anodes for the next generation of lithium-ion batteries. SiNode anodes offer higher battery capacity and faster charging rates, all while being produced via a low cost solution chemistry-based manufacturing process.

  15. Si Wu | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Si Wu d3p754 Primary tabs View(active tab) Track Si Wu Staff Member Title: Scientist Address: P.O. Box 999 K8-98 City: Richland State: WA Zip Code: 99352 Phone: (509) 371-6325...

  16. GeSi intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia)

    E-Print Network [OSTI]

    GeSi intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia) Laboratori December 1999 Exploiting Ge K-edge x-ray absorption spectroscopy we provide direct evidence of SiGe intermixing in self-organized strained and unstrained Ge quantum dots on Si, and provide a quantitative

  17. Photoinduced Desorption of Xe from Porous Si following Ultraviolet Irradiation: Evidence for a Selective and Highly Effective Optical Activity

    E-Print Network [OSTI]

    Asscher, Micha

    , photovoltaics, and photocatalysis [1,2]. Photodissociation of N2O on Si (100) has been studied [3] as a mild) of Xe from porous silicon under UV irradiation. It was found that internal morphology and size of the pores and the excita- tion wavelength strongly affect the overall photoresponse of this system. Two

  18. Graphene as a subnanometre trans-electrode , W. Hubbard2

    E-Print Network [OSTI]

    Golovchenko, Jene A.

    #12;LETTERS Graphene as a subnanometre trans-electrode membrane S. Garaj1 , W. Hubbard2 , A. Reina3 of graphite, called graphene, have recently been the subject of intense research with the hope that practical and elec- trical sensitivity of graphene motivated us to investigate the poten- tial use of graphene

  19. Finitary S5-Theories Tran Cao Son1

    E-Print Network [OSTI]

    Baral, Chitta

    Finitary S5-Theories Tran Cao Son1 , Enrico Pontelli1 , Chitta Baral2 , and Gregory Gelfond2 1 to equivalence). We specifically focus on S5-theories. We call this class of epistemic logic theories as finitary S5-theories. Models of finitary S5-theories can be shown to be canonical in that they do not contain

  20. Original Research Magnetic Resonance Image-Guided Trans-Septal

    E-Print Network [OSTI]

    Atalar, Ergin

    vasculature. Key Words: interventional; magnetic resonance imaging; trans-septal catheterization; cardiac; MR with a pigtail catheter in the aorta and the use of His bundle/coronary sinus catheters (1), and, more recently from a percutaneous femoral vein ap- proach. MATERIALS AND METHODS Animal Model The Institutional

  1. Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells

    E-Print Network [OSTI]

    Zhengping Jiang; Neerav Kharche; Timothy Boykin; Gerhard Klimeck

    2012-03-06T23:59:59.000Z

    A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface disorder on the VS in an atomistic tight binding approach based on statistical sampling. VS is analyzed as a function of electric field, QW thickness, and simulation domain size. Strong electric fields push the electron wavefunctions into the SiGe buffer and introduce significant VS fluctuations from device to device. A Gedankenexperiment with ordered alloys sheds light on the importance of different bonding configurations on VS. We conclude that a single SiGe band offset and effective mass cannot comprehend the complex Si/SiGe interface interactions that dominate VS.

  2. Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells

    E-Print Network [OSTI]

    Jiang, Zhengping; Boykin, Timothy; Klimeck, Gerhard

    2011-01-01T23:59:59.000Z

    A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface disorder on the VS in an atomistic tight binding approach based on statistical sampling. VS is analyzed as a function of electric field, QW thickness, and simulation domain size. Strong electric fields push the electron wavefunctions into the SiGe buffer and introduce significant VS fluctuations from device to device. A Gedankenexperiment with ordered alloys sheds light on the importance of different bonding configurations on VS. We conclude that a single SiGe band offset and effective mass cannot comprehend the complex Si/SiGe interface interactions that dominate VS.

  3. X-Ray And Polarized Neutron Reflectometry: Characterization Of Si/Co/Si And Si/Ni/Si Systems

    SciTech Connect (OSTI)

    Bhattacharya, Debarati; Basu, Saibal [Solid State Physics Division, Bhabha Atomic Research Center, Mumbai, Maharastra 400085 (India); Poswal, A. K. [Applied Spectroscopy Division, Bhabha Atomic Research Center, Mumbai, Maharastra 400085 (India); Roy, S.; Dev, B. N. [Department of Materials Science, Indian Association for the Cultivation of Science, 2A and 2B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032 (India)

    2010-12-01T23:59:59.000Z

    Technologically important metal silicides formed through interdiffusion in metal/Si systems has been probed using two complementary techniques viz. x-ray reflectivity (XRR) and polarized neutron reflectivity (PNR). Both structural and magnetic characterization with good depth resolution has been achieved in these systems. We have studied two systems Si/Co/Si and Si/Ni/Si which relate to important applications in ferromagnetic/ non-magnetic semiconductor layered structures for memory devices.

  4. The SpallaTion

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed offOCHCO Overview OCHCOSystems Analysis Success StoriesInvestigationsTheDepartmentTheDecember 31,The

  5. CUSSSFIC4TION CMUXLLq

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling Corp -KWatertowni5W 95.5x-L* d! CT NC0 - i

  6. Campus Sustainability Planetary Health Ecological Design Social and Environmental Enterprise Incuba-tion EcoVillages Sustainable Food Systems Ecoliteracy Solutions Journal Campus Systems Model Energy

    E-Print Network [OSTI]

    Hayden, Nancy J.

    Villages Sustainable Food Systems Ecoliteracy Solutions Journal Campus Systems Model Energy Conservation, Efficiency1 Campus Sustainability Planetary Health Ecological Design Social and Environmental Enterprise Incuba- tion EcoVillages Sustainable Food Systems Ecoliteracy Solutions Journal Campus Systems Model

  7. Reliability implications of defects in high temperature annealed Si/SiO{sub 2}/Si structures

    SciTech Connect (OSTI)

    Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S. [Sandia National Labs., Albuquerque, NM (United States); Devine, R.A.B.; Mathiot, D. [France Telecom/CNET, Meylan (France); Wilson, I.H.; Xu, J.B. [Chinese Univ. of Hong Kong (Hong Kong)

    1994-08-01T23:59:59.000Z

    High-temperature post-oxidation annealing of poly-Si/SiO{sub 2}/Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO{sub 2} interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO{sub 2} network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO{sub 2} and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO{sub 2}/Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies.

  8. Epoxidation of the methamphetamine pyrolysis product, trans-phenylpropene, to trans-phenylpropylene oxide by CYP enzymes and stereoselective glutathione adduct formation

    SciTech Connect (OSTI)

    Sanga, Madhu [Department of Basic Pharmaceutical Sciences, West Virginia University, 1 Medical Center Drive, Morgantown, WV 26506 (United States); Younis, Islam R. [Department of Basic Pharmaceutical Sciences, West Virginia University, 1 Medical Center Drive, Morgantown, WV 26506 (United States); Tirumalai, Padma S. [Department of Basic Pharmaceutical Sciences, West Virginia University, 1 Medical Center Drive, Morgantown, WV 26506 (United States); Bland, Tina M. [Department of Basic Pharmaceutical Sciences, West Virginia University, 1 Medical Center Drive, Morgantown, WV 26506 (United States); Banaszewska, Monica [Department of Neurobiology and Anatomy, West Virginia University, Morgantown, WV 26506 (United States); Konat, Gregory W. [Department of Neurobiology and Anatomy, West Virginia University, Morgantown, WV 26506 (United States); Tracy, Timothy S. [Department of Experimental and Clinical Pharmacology, University of Minnesota, Minneapolis, MN 55455 (United States); Gannett, Peter M. [Department of Basic Pharmaceutical Sciences, West Virginia University, 1 Medical Center Drive, Morgantown, WV 26506 (United States); Callery, Patrick S. [Department of Basic Pharmaceutical Sciences, West Virginia University, 1 Medical Center Drive, Morgantown, WV 26506 (United States)]. E-mail: pcallery@hsc.wvu.edu

    2006-03-01T23:59:59.000Z

    Pyrolytic products of smoked methamphetamine hydrochloride are well established. Among the various degradation products formed, trans-phenylpropene (trans-{beta}-methylstyrene) is structurally similar to styrene analogues known to be bioactivated by CYP enzymes. In human liver microsomes, trans-phenylpropene was converted to the epoxide trans-phenylpropylene oxide (trans-2-methyl-3-phenyloxirane) and cinnamyl alcohol. Incubation of trans-phenylpropene with microsomes in the presence of enzyme-specific P450 enzyme inhibitors indicated the involvement of CYP2E1, CYP1A2, and CYP3A4 enzymes. Both (R,R)-phenylpropylene oxide and (S,S)-phenylpropylene oxide were formed in human liver microsomal preparations. Enantiomers of trans-phenylpropylene oxide were stereoselectively and regioselectively conjugated in a Phase II drug metabolism reaction catalyzed by human liver cytosolic enzymes consisting of conjugation with glutathione. The structure of the phenylpropylene oxide-glutathione adduct is consistent with nucleophilic ring-opening by attack at the benzylic carbon. Exposure of cultured C6 glial cells to (S,S)-phenylpropylene oxide produced a cytotoxic response in a concentration-dependent manner based on cell degeneration and death.

  9. Vinylboranes as trans-dihydroxyethylene equivalents in Diels-Alder reactions

    E-Print Network [OSTI]

    Redman, Aniko Maria

    1993-01-01T23:59:59.000Z

    of Dienophile 7 trans-4-tert-Butyl-6-(dimethylphenylsil yl)- 3-cyclohexen- I-ol (9) . tr ans-4-Phenyl-6-(dimethylphenylsilyl)- 3-cyclohexen-I-ol (10) and trans-3-Phenyl-6-(dimethylphenylsilyl)- 3-cyclohexen-I-ol (11). trans-3, 4-Dimethyl-6...)-3-cyclohexen-I-ol (15) and trans-3-(4-methyl-3-pentenyl)- 6-(dimethylphenylsilyl)-3-cyclohexen- I-ol (16) (I et, 3', 4', 6[))- I-Acetoxy-3, 4-epoxy-3, 4-dimethyl- 6-(dimcthylphenylsilyl)-cyclohexane (21) Page 57 57 58 58 59 59 60 61 62...

  10. Near interface oxide degradation in high temperature annealed Si/SiO{sub 2}/Si structures

    SciTech Connect (OSTI)

    Devine, R.A.B.; Mathiot, D. [Centre National d`Etudes des Telecommunications (CNET), 38 - Meylan (France); Warren, W.L.; Fleetwood, D.M. [Sandia National Labs., Albuquerque, NM (United States)

    1993-12-31T23:59:59.000Z

    Degradation of 430 nm thick SiO{sub 2} layers in Si/SiO{sub 2}/Si structures which results from high temperature annealing (1320 C) has been studied using electron spin resonance, infra-red and refractive index measurements. Large numbers of oxygen vacancies are found in a region {le}100 nm from each Si/SiO{sub 2} interface. Two types of paramagnetic defects are observed following {gamma} or x-irradiation or hole injection. The 1106 cm{sup {minus}1} infra-red absorption associated with O interstitials in the Si substrate is found to increase with annealing time. The infra-red and spin resonance observations can be explained qualitatively and quantitatively in terms of a model in which oxygen atoms are gettered from the oxide into the under or overlying Si, the driving force being the increased O solubility limit associated with the anneal temperature.

  11. Integrated Analysis of Market Transformation Scenarios with HyTrans

    SciTech Connect (OSTI)

    Greene, David L [ORNL; Leiby, Paul Newsome [ORNL; Bowman, David Charles [ORNL

    2007-06-01T23:59:59.000Z

    This report presents alternative visions of the transition of light-duty vehicle transportation in the United States from petroleum to hydrogen power. It is a supporting document to the U.S. Department of Energy's Summary Report, "Analysis of the Transition to a Hydrogen Economy and the Potential Hydrogen Infrastructure Requirements" (U.S. DOE, 2007). Three alternative early transition scenarios were analyzed using a market simulation model called HyTrans. The HyTrans model simultaneously represents the behavior of fuel suppliers, vehicle manufacturers and consumers, explicitly recognizing the importance of fuel availability and the diversity of vehicle choices to consumers, and dependence of fuel supply on the existence of market demand. Competitive market outcomes are simulated by means of non-linear optimization of social surplus through the year 2050. The three scenarios specify different rates and geographical distributions of market penetration for hydrogen fuel cell vehicles from 2012 through 2025. Scenario 1 leads to 2 million vehicles on U.S. roads by 2025, while Scenarios 2 and 3 result in 5 million and 10 million FCVs in use by 2025, respectively. The HyTrans model "costs out" the transition scenarios and alternative policies for achieving them. It then tests whether the scenarios, together with the achievement of the DOE's technology goals for fuel cell vehicles and hydrogen infrastructure technologies could lead to a sustainable transition to hydrogen powered transportation. Given the achievement of DOE's ambitious technology goals, all three scenarios appear to lead to a sustainable transition to hydrogen. In the absence of early transition deployment effort, no transition is likely to begin before 2045. The cumulative costs of the transition scenarios to the government range from $8 billion to $45 billion, depending on the scenario, the policies adopted and the degree of cost-sharing with industry. In the absence of carbon constraining policies, the transition to hydrogen achieves about the same reduction in CO2 emissions as a transition to advanced gasoline-electric hybrid vehicles. With significant carbon policy, drastic reductions in well-to-wheel CO2 emissions are possible. Energy transition modeling is a newly evolving field and much remains to be done to improve the utility of models like HyTrans.

  12. Trickle irrigation in the Trans-Pecos area of Texas

    E-Print Network [OSTI]

    Doak, Louis E

    1988-01-01T23:59:59.000Z

    LETTER OF TRANSNITTAL Louis Doak Agricultural Engineer P. O. Box 1041 College Station, TX 77841 !409) 823-2758 This paper represents part of the work th conducted at the Texas Agricultural Experiment Paces. This study in no way xs meant..., as in Israel. the future of row crop production will be in the use c f trickle irrigation technology. u's Doak TRICKLE IRRIGATION IN THE TRANS-PECOS AREA OF TEXAS A PROFESSIONAL PAPER LOUIS E. DOAK Submitted to the College of Agriculture of Texas A...

  13. TransCanada Power Mktg Ltd (Connecticut) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlin Baxin Hydropower StationTown ofTown ofTown ofTraceTrammellTransCanada

  14. TransCanada Power Mktg Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlin Baxin Hydropower StationTown ofTown ofTownTransCanada Power

  15. Vermont Electric Trans Co Inc | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlin BaxinUmwelt ManagementVera Irrigation DistrictVermont Electric Trans

  16. TransCanada Energy Marketing ULC | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTown of Ladoga, Indiana (Utility Company) JumpTradeWind Energy LLCOpenTrans

  17. TransCanada Power Mktg Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTown of Ladoga, Indiana (Utility Company) JumpTradeWind EnergyTransCanada Power Mktg

  18. Diffusion in SiGe and Ge

    E-Print Network [OSTI]

    Liao, Christopher Yuan Ting

    2010-01-01T23:59:59.000Z

    Claeys, et al. , "Si versus Ge for future microelectronics,"in Selectively Doped Si/Si x Ge 1-x Superlattices," PhysicalA. Fitzgerald, et al. , "Relaxed Ge x Si 1-x structures for

  19. Diffusion in SiGe and Ge

    E-Print Network [OSTI]

    Liao, Christopher Yuan Ting

    2010-01-01T23:59:59.000Z

    High-electron-mobility Si/SiGe heterostructures: influenceof the relaxed SiGe buffer layer," Semiconductor Science andFrom its discovery to SiGe devices," Materials Science in

  20. Tunable, long-wavelength PtSi/SiGe/Si Schottky diode infrared detectors J. R. Jimeneza)

    E-Print Network [OSTI]

    Tunable, long-wavelength PtSi/SiGe/Si Schottky diode infrared detectors J. R. Jimeneza) Faura, Massachusetts 01731 Received 9 March 1995; accepted for publication 31 May 1995 We have fabricated p-type PtSi/SiGe dependent on the applied bias. The variability in the barrier height is obtained by using the SiGe

  1. TransPlanckian Particles and the Quantization of Time

    E-Print Network [OSTI]

    G. 't Hooft

    1998-05-20T23:59:59.000Z

    Trans-Planckian particles are elementary particles accelerated such that their energies surpass the Planck value. There are several reasons to believe that trans-Planckian particles do not represent independent degrees of freedom in Hilbert space, but they are controlled by the cis-Planckian particles. A way to learn more about the mechanisms at work here, is to study black hole horizons, starting from the scattering matrix Ansatz. By compactifying one of the three physical spacial dimensions, the scattering matrix Ansatz can be exploited more efficiently than before. The algebra of operators on a black hole horizon allows for a few distinct representations. It is found that this horizon can be seen as being built up from string bits with unit lengths, each of which being described by a representation of the SO(2,1) Lorentz group. We then demonstrate how the holographic principle works for this case, by constructing the operators corresponding to a field in space-time. The parameter t turns out to be quantized in Planckian units, divided by the period R of the compactified dimension.

  2. Molecular Structures and Energetics of the (TiO?)n (n = 1-4) Clusters and Their Anions

    SciTech Connect (OSTI)

    Li, Shenggang; Dixon, David A.

    2008-07-24T23:59:59.000Z

    The research described in this product was performed in part in the Environmental Molecular Sciences Laboratory, a national scientific user facility sponsored by the Department of Energy's Office of Biological and Environmental Research and located at Pacific Northwest National Laboratory. The (TiO?)n clusters and their anions for n ) 1-4 have been studied with coupled cluster theory [CCSD(T)] and density functional theory (DFT). For n > 1, numerous conformations are located for both the neutral and anionic clusters, and their relative energies are calculated at both the DFT and CCSD(T) levels. The CCSD(T) energies are extrapolated to the complete basis set limit for the monomer and dimer and calculated up to the triple-? level for the trimer and tetramer. The adiabatic and vertical electron detachment energies of the anionic clusters to the ground and first excited states of the neutral clusters are calculated at both levels and compared with the experimental results. The comparison allows for the definitive assignment of the groundstate structures of the anionic clusters. Anions of the dimer and tetramer are found to have very closely lying conformations within 2 kcal/mol at the CCSD(T) level, whereas that of the trimer does not. In addition, accurate clustering energies and heats of formation are calculated for the neutral clusters and compared with the available experimental data. Estimates of the titanium-oxygen bond energies show that they are stronger than the group VIB transition metal-oxygen bonds except for tungsten. The atomization energies of these clusters display much stronger basis set dependence than the clustering energies. This allows the calculation of more accurate heats of formation for larger clusters on the basis of calculated clustering energies.

  3. The benzene metabolite trans,trans-muconaldehyde blocks gap junction intercellular communication by cross-linking connexin43

    SciTech Connect (OSTI)

    Rivedal, Edgar [Department of Cancer Prevention, Institute for Cancer Research, Norwegian Radium Hospital, Montebello, N-0310 Oslo (Norway)], E-mail: edgarr@rr-research.no; Leithe, Edward [Department of Cancer Prevention, Institute for Cancer Research, Norwegian Radium Hospital, Montebello, N-0310 Oslo (Norway)

    2008-11-01T23:59:59.000Z

    Benzene is used at large volumes in many different human activities. Hematotoxicity and cancer-causation as a result of benzene exposure was recognized many years ago, but the mechanisms involved remain unclear. Aberrant regulation of gap junction intercellular communication (GJIC) has been linked to both cancer induction and interference with normal hematopoietic development. We have previously suggested that inhibition of GJIC may play a role in benzene toxicity since benzene metabolites were found to block GJIC, the ring-opened trans,trans-muconaldehyde (MUC) being the most potent metabolite. In the present work we have studied the molecular mechanisms underlying the MUC-induced inhibition of gap junctional communication. We show that MUC induces cross-linking of the gap junction protein connexin43 and that this is likely to be responsible for the induced inhibition of GJIC, as well as the loss of connexin43 observed in Western blots. We also show that glutaraldehyde possesses similar effects as MUC, and we compare the effects to that of formaldehyde. The fact that glutaraldehyde and formaldehyde have been associated with induction of leukemia as well as disturbance of hematopoiesis, strengthens the possible link between the effect of MUC on gap junctions, and the toxic effects of benzene.

  4. Preparation and Characterization of Chitosan-Alginate Nanoparticles for Trans-Cinnamaldehyde Entrapment

    E-Print Network [OSTI]

    Loquercio, Andre S

    2014-11-04T23:59:59.000Z

    Rotations per minute s Second SEM Scanning electron microscopy TC Trans-cinnamaldehyde TEM Transmission electron microscopy TSA Tryptic soy agar TSA-YE Tryptic soy agar with yeast extract TSB Tryptic soy broth TPB Tryptose phosphate broth ULCA... ................................................................................ 42 2.4.2 Alginate ................................................................................. 44 2.4.3 Calcium-Alginate Complex .................................................. 46 2.4.4 Trans-cinnamaldehyde (TC...

  5. TransForumNews from Argonne's Transportation Research Program www.transportation.anl.gov

    E-Print Network [OSTI]

    Kemner, Ken

    TransForumNews from Argonne's Transportation Research Program www.transportation.anl.gov Volume 14 Issue 2 2014 Contents #12;TransForumNews from Argonne's Transportation Research Program www.transportation.anl.gov VERIFI Shrinks Combustion Engine Development Cycles to Save Money and Time page 4 Argonne researchers

  6. TransForumNews from Argonne's Transportation Research Program www.transportation.anl.gov

    E-Print Network [OSTI]

    Kemner, Ken

    TransForumNews from Argonne's Transportation Research Program www.transportation.anl.gov Volume 14 Issue 2 2014 #12;TransForumNews from Argonne's Transportation Research Program www.transportation.anl.gov VERIFI Shrinks Combustion Engine Development Cycles to Save Money and Time page 4 Argonne researchers

  7. Trans beta substituted chlorins and methods of making and using the same

    DOE Patents [OSTI]

    Lindsey, Jonathan S.; Balasubramanian, Thiagarajan

    2003-05-06T23:59:59.000Z

    Trans beta substituted chlorins and methods of making the same are disclosed, along with polymers formed from or containing such trans beta substituted chlorins as one or more monomeric units therein, light harvesting rods formed from such polymers, and electrodes carrying such polymers.

  8. Progress in blanket designs using SiCf/SiC composites L. Giancarli a,

    E-Print Network [OSTI]

    Raffray, A. René

    Progress in blanket designs using SiCf/SiC composites L. Giancarli a, 1, H. Golfier b , S. Nishio c the use of SiCf/SiC composite as structural material for fusion power reactor breeding blanket. SeveralCf/SiC. # 2002 Published by Elsevier Science B.V. Keywords: Blanket designs; SiCf/SiC composites; Self

  9. Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates

    E-Print Network [OSTI]

    Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates V. K. Yang, MAs films grown on Si and SiGe virtual substrates analytically and experimentally. The analytical model10 Relaxed SiGe graded layers on Si have produced the highest quality GaAs on Si to date for the integration

  10. University of California and HRL Laboratories, LLC. All rights reserved. SiGe/Si SUPERLATTICE COOLERS

    E-Print Network [OSTI]

    University of California and HRL Laboratories, LLC. All rights reserved. SiGe/Si SUPERLATTICE and characterization of SiGe/Si superlattice coolers are described. Superlattice structures were used to enhance for SiGe/Si superlattice coolers. SiGe is a good thermoelectric material for high temperature

  11. Si/SiGe modulation-doped structures with thin buffer layers: Effect of substrate orientation

    E-Print Network [OSTI]

    Allen, Leslie H.

    Si/SiGe modulation-doped structures with thin buffer layers: Effect of substrate orientation G. L and Nomarski microscopy. In n-type modulation-doped Si-SiGe structures, the band structure is type II where SiGe layer, generally on top of the strained Si, is intentionally doped leaving the adjacent Si layer

  12. A Note on Trans-Planckian Tail Effects

    E-Print Network [OSTI]

    Graef, L L

    2015-01-01T23:59:59.000Z

    We study the proposal by Mersini et al. that the observed dark energy might be explained by the back-reaction of the set of tail modes in a theory with a dispersion relation in which the mode frequency decays exponentially in the trans-Planckian regime. The matter tail modes are frozen out, however they induce metric fluctuations. The energy-momentum tensor with which the tail modes effect the background geometry obtains contributions from both metric and matter fluctuations. We calculate the equation of state induced by the tail modes taking into account the gravitational contribution. We find that, in contrast to the case of frozen super-Hubble cosmological fluctuations, in this case the matter perturbations dominate, and they yield an equation of state which to leading order takes the form of a positive cosmological constant.

  13. This paper proposes a method for classification and discrimina-tion of textures based on the energies of image subbands. We

    E-Print Network [OSTI]

    Chang, Shih-Fu

    , the dimension of the discriminant space and number of energy mea- sures used for classification. We hopeAbstract This paper proposes a method for classification and discrimina- tion of textures based on the energies of image subbands. We show that even with this relatively simple feature set, effective texture

  14. RE SONANT PHO NON -A 8 8 IS TE D 6E NE HA TION. . . not observed, presumably because either the

    E-Print Network [OSTI]

    Glyde, Henry R.

    , for example, A. Yariv, Quantum Electronics (Wiley, New York, 1967), Chap. 21; N. Bloembergen, Nonlinear OpticsRE SONANT PHO NON -A 8 8 IS TE D 6E NE HA TION. . . not observed, presumably because either cussions. *Present address: Hasler A. G. , Bern, Switzerland. ~P. A. Franken, A. E. Hill, C. %'. Peters

  15. Towards an InTerdIscIplInary approach To nexT-GeneraTIon BIofuels EnvironmEntal, tEchno-Economic, and GovErnancE

    E-Print Network [OSTI]

    Iglesia, Enrique

    Towards an InTerdIscIplInary approach To nexT-GeneraTIon BIofuels EnvironmEntal, t. 2010. The Ecological Impact of Biofuels. Pages 351-377 in D. J. Futuyma, H. B. Shafer, and D. Huffer, S., Roche, C.M., Blanch, H.W., and Clark, D.S. (2012). Escherichia coli for biofuel production

  16. Photoluminescence from electron-hole plasmas confined in Si/Si 1-,Ge,/Si quantum wells

    E-Print Network [OSTI]

    Photoluminescence from electron-hole plasmas confined in Si/Si 1-,Ge,/Si quantum wells X. Xiao, C 1992) We report the first observation of photoluminescence from electron-hole plasmas in Si/S&,sGe of the physical processes un- derlying luminescence in Si, -,GeX alloys, especially at high carrier densities

  17. Electrical passivation of Si/SiGe/Si structures by 1-octadecene monolayers

    SciTech Connect (OSTI)

    Antonova, Irina V.; Soots, Regina A.; Guliaev, Mitrofan B.; Prinz, Victor Ya.; Kagan, Miron S.; Kolodzey, James [Institute of Semiconductor Physics, RAS, 13 Lavrentieva, Novosibirsk 630090 (Russian Federation); Institute of Radio Engineering and Electronics, RAS, 11 Mokhovaya, 125009 Moscow (Russian Federation); University of Delaware, Newark, Delaware 19716 (United States)

    2007-09-03T23:59:59.000Z

    The passivating effects of organic monolayers of 1-octadecene deposited onto the silicon surfaces of both n and p conductivities were studied for Si/SiGe/Si structures grown by molecular beam epitaxy and chemical vapor deposition. Measurements of the capacitance versus voltage and current versus voltage were made on structures covered with the organic monolayer and compared with unpassivated structures covered with native silicon dioxide. The results demonstrate that the organic passivation provides a decrease of surface charge and an increase of carrier concentration in the near-surface layers and/or the SiGe quantum wells.

  18. Serial and parallel Si, Ge, and SiGe direct-write with scanning...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting stamps. Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting...

  19. Magnesium Silicate Dissolution Investigated by 29Si MAS, 1H-29Si...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Silicate Dissolution Investigated by 29Si MAS, 1H-29Si CP MAS, 25Mg QCPMG, and 1H-25Mg CP QCPMG NMR. Magnesium Silicate Dissolution Investigated by 29Si MAS, 1H-29Si CP MAS, 25Mg...

  20. Postdoctoral Positions: Si/SiGe Quantum Dots and Quantum Computing Eriksson Group

    E-Print Network [OSTI]

    Saffman, Mark

    Postdoctoral Positions: Si/SiGe Quantum Dots and Quantum Computing Eriksson Group Department in the area of Si/SiGe quantum dots and quantum computing. Recent advances in our group include single

  1. The effect of neutron irradiation on the mechanical properties of C/SiC composites

    SciTech Connect (OSTI)

    Shih, Chunghao [ORNL] [ORNL; Katoh, Yutai [ORNL] [ORNL; Snead, Lance Lewis [ORNL] [ORNL; Steinbeck, John [ORNL] [ORNL

    2013-01-01T23:59:59.000Z

    The effects of neutron irradiation to 3.5 and 9.5 dpa at 730 C on a 2D plain woven carbon fiber reinforced polymer derived SiC matrix composite are presented. For both fluences, the irradiation caused in-plane contraction and trans-plane expansion. Irradiation also caused substantial reduction in composite flexural strength (54%) and increase in flexural tangent modulus (+85%). The extents of dimensional/ mechanical property changes were greater for the higher fluence irradiated samples. Those changes suggest the instability of the polymer derived SiC matrix following irradiation. The nature of the mechanical property changes suggest increased clamping stress between the fiber and the matrix. The composite property changes are explained in terms of irradiation effects on composite constituents and are compared with carbon fiber reinforced carbon matrix composite as a reference material.

  2. Valley splitting in Si quantum dots embedded in SiGe S. Srinivasan,1,2

    E-Print Network [OSTI]

    Rokhinson, Leonid

    Valley splitting in Si quantum dots embedded in SiGe S. Srinivasan,1,2 G. Klimeck,1,2 and L. P subband.4 Recently, calculations predicted that valley splitting in nar- row few nanometers SiGe/Si/SiGe that prediction, which has been explained12 by the disorders of the Si/SiGe interface and in the SiGe buffer

  3. Synthesis and Characterization of Structured Si-Carbon Nanocomposite...

    Broader source: Energy.gov (indexed) [DOE]

    nanoparticles with controlled size and synthesized Si-carbon composites, including Si-graphene and Si@hollow carbon. * Synthesized new polymer binders for Si-based anodes. *...

  4. Defects in Ge and Si caused by 1 MeV Si+ implantation*

    E-Print Network [OSTI]

    Florida, University of

    Defects in Ge and Si caused by 1 MeV Si+ implantation* D. P. Hickeya Department of Materials defect formation and evolution in the 001 Ge and Si wafers implanted with 1 MeV Si+ and 40 keV Si dissolve at the projected range for nonamorphizing implants into Si. However, in Ge, no 311 defect

  5. \\Development, implementation and veri cation of a physics-based Si/SiGe

    E-Print Network [OSTI]

    Paper I \\Development, implementation and veri#12;cation of a physics-based Si/SiGe HBT model and verification of a physicsbased Si/SiGe HBT model for millimeterwave non linear circuit simulations. S. Bruce thermal dependence has been developed for Si/SiGe HBTs. The model takes into account several effects

  6. Simulation of Si/SiGe Micro-Cooler by Thermal Quadrupoles Method Y. Ezzahri *(a)

    E-Print Network [OSTI]

    Simulation of Si/SiGe Micro-Cooler by Thermal Quadrupoles Method Y. Ezzahri *(a) , S. Dilhaire (a on thermal quadrupoles is presented to model the behavior of a single stage Si/SiGe micro-cooler in AC of the model with experimental reflectometry techniques is also presented. Performance of Si/SiGe micro

  7. Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques

    E-Print Network [OSTI]

    Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques Gianni was arranged by Prof. C.K. Maiti Abstract Techniques for fabricating strained Si, SiGe, and Ge on is presented, with a detailed discussion of wafer bonding approaches for strained Si, SiGe, and Ge on

  8. Development, implementation and verification of a physicsbased Si/SiGe

    E-Print Network [OSTI]

    Development, implementation and verification of a physicsbased Si/SiGe HBT model for millimeter Abstract A physicsbased largesignal model including thermal dependence has been developed for Si/SiGe HBTs. The model takes into account several effects that are important for the operation of Si/SiGe HBTs

  9. Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice

    E-Print Network [OSTI]

    Yang, Peidong

    Letters Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires Yiying Wu, Rong-defined compositional profile along the wire axis. Single-crystalline nanowires with longitudinal Si/SiGe superlattice-crystalline nano- wires with Si/SiGe superlattice structure are obtained and thoroughly characterized using

  10. Development, implementation and verification of a physics-based Si/SiGe

    E-Print Network [OSTI]

    Development, implementation and verification of a physics-based Si/SiGe HBT model for millimeter Abstract A physics-based large-signal model including thermal dependence has been developed for Si/SiGe HBTs. The model takes into account several effects that are important for the operation of Si/SiGe HBTs

  11. Study of thermomechanical properties of Si/SiGe superlattices using femtosecond transient thermoreflectance technique

    E-Print Network [OSTI]

    Study of thermomechanical properties of Si/SiGe superlattices using femtosecond transient the thermomechanical properties of two Si/SiGe superlattices. A theoretical model is presented which agrees well-lattice vectors is smaller.8 In the experiments reported here we have applied a FTT technique to study two Si/SiGe

  12. EBIC characterization of strained Si/SiGe heterostructures

    SciTech Connect (OSTI)

    Yakimov, E. B. [Russian Academy of Sciences, Institute of Microelectronics Technology and High-Purity Materials (Russian Federation)], E-mail: yakimov@ipmt-hpm.ac.ru; Zhang, R. H.; Rozgonyi, G. A. [North Carolina State University, Department of Materials Science and Engineering (United States); Seacrist, M. [MEMC Electronic Materials (United States)

    2007-04-15T23:59:59.000Z

    Strained-Si/SiGe heterostructure is studied by EBIC. The effect of annealing at 800 deg. C is investigated. The EBIC images obtained at different beam energies are analyzed. The analysis of images obtained shows that misfit dislocation bunches in the graded SiGe layer could not explain the cross-hatch contrast dependence on E{sub b}. Therefore, at least a part of this contrast should be associated with other defects located closer to the depletion region. It is assumed that dislocation trails could play the role of such defects.

  13. Plasma hydrogenation of strained Si/SiGe/Si heterostructure for layer transfer without ion implantation

    SciTech Connect (OSTI)

    Shao Lin; Lin Yuan; Lee, J.K.; Jia, Q.X.; Wang Yongqiang; Nastasi, M.; Thompson, Phillip E.; Theodore, N. David; Chu, Paul K.; Alford, T.L.; Mayer, J.W.; Chen Peng; Lau, S.S. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Code 6812, Naval Research Laboratory, Washington, DC 20375-5347 (United States); Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., Tempe, Arizona 85284 (United States); Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Department of Chemical and Materials Engineering, Arizona State University, Tempe, Arizona 85287 (United States); University of California at San Diego, San Diego, California 92093 (United States)

    2005-08-29T23:59:59.000Z

    We have developed an innovative approach without the use of ion implantation to transfer a high-quality thin Si layer for the fabrication of silicon-on-insulator wafers. The technique uses a buried strained SiGe layer, a few nanometers in thickness, to provide H trapping centers. In conjunction with H plasma hydrogenation, lift-off of the top Si layer can be realized with cleavage occurring at the depth of the strained SiGe layer. This technique avoids irradiation damage within the top Si layer that typically results from ion implantation used to create H trapping regions in the conventional ion-cut method. We explain the strain-facilitated layer transfer as being due to preferential vacancy aggregation within the strained layer and subsequent trapping of hydrogen, which lead to cracking in a well controlled manner.

  14. , 20130047, published 2 June 20143722014Phil. Trans. R. Soc. A Walker Smith

    E-Print Network [OSTI]

    Thompson, Andrew

    , 20130047, published 2 June 20143722014Phil. Trans. R. Soc. A Walker Smith Thompson, Sophie Fielding , Damien Guihen , Elizabeth Creed , Je K. Ridley and Walker Smith Centre for Ocean and Atmospheric

  15. Regulatory Interactions in ProKaryotes from RegTransBase

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Dubchak, Inna; Gelfand, Mikhail

    RegTransBase, a manually curated database of regulatory interactions in prokaryotes, captures the knowledge in published scientific literature using a controlled vocabulary. RegTransBase describes a large number of regulatory interactions reported in many organisms and contains various types of experimental data, in particular: the activation or repression of transcription by an identified direct regulator determining the transcriptional regulatory function of a protein (or RNA) directly binding to DNA or RNA mapping or prediction of binding sites for a regulatory protein characterization of regulatory mutations Currently, the RegTransBase content is derived from about 3000 relevant articles describing over 7000 experiments in relation to 128 microbes. It contains data on the regulation of about 7500 genes and evidence for 6500 interactions with 650 regulators. RegTransBase also contains manually created position weight matrices (PWM) that can be used to identify candidate regulatory sites in over 60 species. (Specialized Interface)

  16. trans-K3[TcO2(CN)4]. | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    range. Citation: Chatterjee S, AS Del Negro, MK Edwards, B Twamley, JA Krause, and SA Bryan.2010."trans-K3TcO2(CN)4."Acta Crystallographica. Section E 66(8):i61 - i62....

  17. Intern experience at Tech Tran Corporation, Naperville, Illinois: an internship report

    E-Print Network [OSTI]

    Morgan, Joseph Alan, 1947-

    2013-03-13T23:59:59.000Z

    This report presents a survey of the author's internship experience with Tech Tran Corporation during the period September 1, 1981 through May 1, 1982. The eight month internship was spent as an associate engineer and associate editor...

  18. Group velocities in coplanar strip transmission lines on Si and Si/SiO2 /Si substrates measured using differential electro-optic sampling

    E-Print Network [OSTI]

    Group velocities in coplanar strip transmission lines on Si and Si/SiO2 /Si substrates measured 1996; accepted for publication 26 August 1996 The group velocities in coplanar strip transmission lines-9 Velocity measurements have been previously carried out for coplanar transmission lines on a variety

  19. Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells

    E-Print Network [OSTI]

    Deng, Xunming

    Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc- Si) triple-junction solar cell due to its higher optical in an a-Si based multiple- junction solar cell. 1. INTRODUCTION Narrow bandgap amorphous SiGe (a

  20. Characteristics of phase nucleation and growth during oriented crystallization of alloys of the Si-TaSi/sub 2/ and Si-NbSi/sub 2/ eutectic systems

    SciTech Connect (OSTI)

    Grabovetskaya, G.P.; Butkevich, L.M.

    1987-07-01T23:59:59.000Z

    The authors investigate the effect of the nucleation conditions and the initial concentration of the components on the nature of the change in the phase composition and structure along the length of the directionally crystallized bars of alloys in the Si-TaSi/sub 2/ and Si-NbSi/sub 2/ eutectic systems. The compositions of the investigated alloys are given. The starting materials were silicon of semiconductor purity, tantalum, and niobium produced by electron beam melting. The alloys were crystallized directionally by the Czochralski method. The nature of the structure and the volume ratio of the phases in the investigated alloys depend significantly on the type of seed, i.e., on the nucleation conditions of the eutectic grain. The basic phases in the eutectic alloys of the Si-TaSi/sub 2/ and Si-NbSi/sub 2/ systems are the disilicides TaSi/sub 2/ and NbSi/sub 2/ respectively.

  1. 3C-SiC Films on Si for MEMS Applications: Mechanical Properties , G. Kravchenko2

    E-Print Network [OSTI]

    Volinsky, Alex A.

    diamond tip. These results indicate that polycrystalline SiC thin films are attractive for MEMS. In addition, poly-crystalline 3C- SiC was also grown on (100)Si so that a comparison with monocrystaline 3C-SiC, also grown on (100)Si, could be made. The mechanical properties of single crystal and polycrystalline 3

  2. SiGe/Si superlattice power generators Gehong Zeng, John E. Bowers

    E-Print Network [OSTI]

    Bowers, John

    SiGe/Si superlattice power generators Gehong Zeng, John E. Bowers Department of Electrical 95064 *Corresponding Email: ali@soe.ucsc.edu, phone: (831) 459-3821 Abstract SiGe is one of the best selective emission of hot electrons through thermionic emission. SiGe/Si superlattice structures were grown

  3. Dynamics of uniform Si/SiGe uniaxial strain generation on compliant insulating substrates

    E-Print Network [OSTI]

    Dynamics of uniform Si/SiGe uniaxial strain generation on compliant insulating substrates R. L on the relaxation of Si/SiGe bilayers of different geometries to obtain up to 1.0% uniaxial tensile strain in silicon and 1.5 GPa uniaxial compressive stress in SiGe [1,2]. The process generates uniform uniaxially

  4. Thermionic power generation at high temperatures using SiGe/Si superlattices

    E-Print Network [OSTI]

    Thermionic power generation at high temperatures using SiGe/Si superlattices Daryoosh Vashaeea of SiGe/Si superlattices for power generation at high temperatures. A detailed theory based on Boltzmann provides only a modest improvement in the power factor. This is due to the fact that SiGe is a multivalley

  5. P-type SiGe/Si Superlattice Cooler Xiaofeng Fan, Gehong Zeng, Edward Croke1

    E-Print Network [OSTI]

    P-type SiGe/Si Superlattice Cooler Xiaofeng Fan, Gehong Zeng, Edward Croke1 , Gerry Robinson, Chris and characterization of single element p-type SiGe/Si superlattice coolers are described. Superlattice structures were]. SiGe is a good thermoelectric material especially for high temperature applications [11

  6. Commercialization potential of compositionally graded Ge - Si??x?Gex? - Si substrates for solar applications

    E-Print Network [OSTI]

    Goh, Johnathan Jian Ming

    2006-01-01T23:59:59.000Z

    This project considers the potential of Ge - Si??x?Gex? - Si substrates for solar applications. The use of compositionally graded substrates to achieve heterointegration across different materials platforms such as Si, Ge ...

  7. Part 15, Authors: Si To Szyszkowski

    E-Print Network [OSTI]

    Humphrey, Judith M.; Hassall, Albert; Doss, Mildred A.

    1951-01-01T23:59:59.000Z

    . [W?.] 1942 b.?The control of cattle lice ice tion

  8. Strain partition of SiSiGe and SiO2 SiGe on compliant substrates Center for Photonics and Optoelectronic Materials and Department of Electrical Engineering,

    E-Print Network [OSTI]

    Duffy, Thomas S.

    of crystalline Si and amorphous SiO2 deposited on crystalline SiGe on a compliant viscous borophosphorosilicate BPSG glass has been observed. Pseudomorphic epitaxial Si was deposited on SiGe films, which were fabricated on BPSG by wafer bonding and the Smart-cut process. The strains in SiGe and Si films were found

  9. Microwave joining of SiC

    SciTech Connect (OSTI)

    Silberglitt, R.; Ahmad, I.; Tian, Y.L. [FM Technologies, Inc., Fairfax, VA (United States)] [and others

    1997-04-01T23:59:59.000Z

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on identification of the most effective joining methods for scale-up to large tube assemblies, including joining using SiC produced in situ from chemical precursors. During FY 1996, a new microwave applicator was designed, fabricated and tested that provides the capability for vacuum baking of the specimens and insulation and for processing under inert environment. This applicator was used to join continuous fiber-reinforced (CFCC) SiC/SiC composites using a polymer precursor to form a SiC interlayer in situ.

  10. Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies

    E-Print Network [OSTI]

    Papavassiliou, Christos

    Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies K.K. Maiti Abstract The measured performance of sub-micron Si:SiGe Schottky gated HFETs is compared to Si n frequency is given as a function of input power. The evaluation highlights the current immaturity of the Si:SiGe

  11. ECS Transactions 3, (7), 1211-1222 (2006) Characterization of Strained Si/SiGe with Raman, Pulsed MOS Capacitor

    E-Print Network [OSTI]

    Schroder, Dieter K.

    2006-01-01T23:59:59.000Z

    ECS Transactions 3, (7), 1211-1222 (2006) 1211 Characterization of Strained Si/SiGe with Raman silicon/relaxed SiGe/graded SiGe/Si samples. The effective generation lifetime depends on the defect defective SiGe. GOI statistical analysis shows worsening oxide breakdown as the Ge concentration in the SiGe

  12. SiNode Systems | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    University SiNode Systems is a battery materials venture developing silicon-graphene anodes for the next generation of lithium-ion batteries. SiNode anodes offer higher...

  13. Statement on trans equality 1. University of Bath recognises that there can be differences between assigned sex and

    E-Print Network [OSTI]

    Burton, Geoffrey R.

    of people living in the gender of their birth and the more fluid identities of many trans people. 2 against people on the grounds of gender identity, intersex conditions or any process of gender reassignment, begun or complete. Where this statement refers to `trans people', it has in mind people living

  14. CLASSIFICdTION CAWXL~ DAm

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling Corp -KWatertowni5W 95.5 L'COLUMBIA+. ,..-

  15. Effect of Si substrate on interfacial SiO{sub 2} scavenging in HfO{sub 2}/SiO{sub 2}/Si stacks

    SciTech Connect (OSTI)

    Li, Xiuyan, E-mail: xiuyan@adam.t.u-tokyo.ac.jp; Yajima, Takeaki; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2014-11-03T23:59:59.000Z

    The scavenging kinetics of an ultra-thin SiO{sub 2} interface layer (SiO{sub 2}-IL) in an HfO{sub 2}/SiO{sub 2}/Si stack is discussed by focusing on the substrate effect in addition to oxygen diffusion. {sup 18}O tracing experiments demonstrate that the O-atom moves from the SiO{sub 2}-IL to the HfO{sub 2} layer during scavenging. SiO{sub 2}-IL scavenging with various substrates (Si, SiC, and sapphire) has been found to be significantly different, which suggests that the Si in the substrate is also necessary to continuously cause the scavenging. Based on these findings and thermodynamic considerations, a kinetic model where oxygen vacancy (V{sub O}) transferred from the HfO{sub 2} reacts with the SiO{sub 2}, which is in contact with the Si-substrate, is proposed for the SiO{sub 2}-IL scavenging.

  16. Si, Yo Puedo Controlar Mi Diabetes!

    E-Print Network [OSTI]

    Si, Yo Puedo Controlar Mi Diabetes! Si, Yo Puedo Controlar M Diabetes! (Si, Yo Puedo/Latinos with diabetes. The curriculum is predicated on the American Diabetes Association's national standards of care and lifestyle skills to better control their diabetes. Relevance Diabetes costs Texas more than 12 billion

  17. Coaxial Si/anodic titanium oxide/Si nanotube arrays for lithium-ion battery anode

    E-Print Network [OSTI]

    Zhou, Chongwu

    Nano Res 1 Coaxial Si/anodic titanium oxide/Si nanotube arrays for lithium-ion battery anode Titanium Oxide / Si Nanotube Arrays for Lithium-ion Battery Anode JiepengRong,,Xin Fang Oxide / Si Nanotube Arrays for Lithium-ion Battery Anode Jiepeng Rong,1, Xin Fang,1, Mingyuan Ge,1

  18. Fully-depleted Strained-Si on Insulator NMOSFETs without Relaxed SiGe Buffers

    E-Print Network [OSTI]

    by wafer bonding and Smart-cut processes, is utilized for the first time to make strained-Si on insulator germanium diffusion into the strained Si, formation of low-resistance silicide and altered dopant diffusion SiGe is transferred by wafer bonding and Smart- cut to a BPSG layer, and during annealing the Si

  19. IEEE TRANS. MAGN., SUBMITTED 1 3D Eddy-Current Imaging of Metal Tubes by

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    IEEE TRANS. MAGN., SUBMITTED 1 3D Eddy-Current Imaging of Metal Tubes by Gradient-Based, Controlled, and Oliver Dorn Abstract--Eddy-current non-destructive testing is widely used to detect defects within-developed binary-specialized method. Index Terms--eddy-current non-destructive testing, impedance variations, level

  20. Van Giang Tran, Stphane Grieu and Monique Polit Time series and neural networks for short-

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    . France has few indigenous sources, only of small amounts of coal, oil and gas. The exploitation electric consumptions forecast Van Giang Tran, Stphane Grieu1 and Monique Polit Laboratoire ELIAUS, Universit de Perpignan Via Domitia, France Abstract. Promoting both energy savings and renewable energy

  1. TransDec: A Data-Driven Framework for Decision-Making in Transportation Systems

    E-Print Network [OSTI]

    Shahabi, Cyrus

    Transportation Systems). The RIITS dataset is collected by various organizations based in Los Angeles County1 TransDec: A Data-Driven Framework for Decision-Making in Transportation Systems Ugur Demiryurek Los Angeles, CA 90089-0781 [demiryur, banaeika, shahabi]@usc.edu ABSTRACT In this paper, we present

  2. A multi-group neutron noise simulator for fast reactors Hoai Nam Tran a,

    E-Print Network [OSTI]

    Demazire, Christophe

    that the noise measured by ex-core detectors in a sodium-cooled fast reactor (SFR) could be useful for assessingA multi-group neutron noise simulator for fast reactors Hoai Nam Tran a, , Florian Zylbersztejn a 2013 Accepted 12 June 2013 Keywords: Neutron noise Fast reactor Hexagonal geometry ESFR a b s t r a c

  3. Trans-Pecos Wagon Trail Tour West Texas Historical Association Annual Meeting

    E-Print Network [OSTI]

    Rock, Chris

    Trans-Pecos Wagon Trail Tour West Texas Historical Association Annual Meeting April 3, 2014, Odessa, Texas. Historically it was major landmark on the trail west as one of a few fordable sections of the Pecos in West Texas, and as a first source of water for about 75 miles on the wagon and stage route from

  4. Applicants Guide to Trans-national co-operation among National Contact Points (NCPs)

    E-Print Network [OSTI]

    De Cindio, Fiorella

    -operation between NCP's. The action will focus on identifying and sharing good practices. This may entail variousApplicants Guide to Trans-national co-operation among National Contact Points (NCPs) Call for the research community to guide the researchers through the rules and procedures of the Marie Curie Actions

  5. Submitted to Trans. Circuits and Systems I Wideband CMOS Low Noise Amplifier Design

    E-Print Network [OSTI]

    Southern California, University of

    Submitted to Trans. Circuits and Systems I Wideband CMOS Low Noise Amplifier Design Based On Source for wideband CMOS low noise amplifier (LNA) with source degener- ation is presented. By allowing an arbitrary in the design of the LNA is to achieve sufficiently large gain and low noise figure to suppress the additive

  6. doi: 10.1098/rsta.2011.0214 , 158-1753702012Phil. Trans. R. Soc. A

    E-Print Network [OSTI]

    Heidemann, John

    ://rsta.royalsocietypublishing.org/subscriptions go to:Phil. Trans. R. Soc. ATo subscribe to This journal is © 2012 The Royal Society on November 28 tools available to the research community. Keywords: underwater acoustic communication; underwater sensor networks; acoustic modems; high latency; energy efficiency; protocol design 1. Introduction

  7. EIS-0139: Trans-Alaska Gas System Final Environmental Impact Statement

    Broader source: Energy.gov [DOE]

    This EIS analyzes the Yukon Pacific Corporation (YPC) proposed construction of the Trans-Alaska Gas System (TAGS) a 796.5 mile long 36-inch diameter pipeline to transport High Pressured Natural Gas between Prudhoe Bay and a Tidewater terminal and LNG Plant near Anderson Bay, AK.

  8. Analytical prediction of the location of ductility dip cracking in the trans-varestraint test

    SciTech Connect (OSTI)

    Singh, I.; Kroenke, W.; Cola, M.

    1997-05-01T23:59:59.000Z

    Some NiCrFe weld metals exhibit decreased ductility over a temperature range known as the {open_quotes}ductility dip{close_quotes} temperature (DDT) range. Ductility dip cracking (DDT) is a phenomenon which occurs in a zone bounded by the DDT range on its sides and a threshold plastic strain on its bottom as shown in figure 1. Figure 1 illustrates how ductility varies as weld metal cools from the solidus temperature for materials with and without a ductility dip. The purpose of this work is to demonstrate the ability to predict the location of the DDC in a Trans-Varestraint Test (TVT) for a specimen machined from a weld deposited EN52 plate. The DDC predictions require a combination of Trans-Varestraint testing and finite element analysis. The test provides the threshold value of externally applied nominal strain below which DDC does not occur. The analysis provides the corresponding threshold local or peak strain. The threshold local plastic strain level and the DDT range are used to predict the location of the DDC. The ultimate purpose of this work is to evaluate susceptibility of highly constrained, component welds to DDC. Test results for Trans-Varestraint Testing for a weld deposited EN52 plate are reported in reference. The ability to predict the location of the DDC in the Trans-Varestraint Test using the techniques reported herein is demonstrated by showing good comparison between the analytical results and the test data.

  9. The Most Reactive Amide As a Transition-State Mimic For cis?trans Interconversion

    E-Print Network [OSTI]

    Komarov, Igor V.; Yanik, Stanislav; Ishchenko, Aleksandr Yu.; Davies, John E.; Goodman, Jonathan M.; Kirby, Anthony J.

    2014-12-22T23:59:59.000Z

    for the enzyme-catalyzed cistrans rotamer interconversion of amides involved in peptide and protein folding and function. The stabilization of the amide group in its high energy, perpendicular conformation common to both systems is shown for the rigid tricyclic...

  10. EULERIANLAGRANGIAN LOCALIZED ADJOINT METHODS FOR TRANS PORT OF NUCLEARWASTE CONTAMINATION IN POROUS MEDIA

    E-Print Network [OSTI]

    Ewing, Richard E.

    EULERIANLAGRANGIAN LOCALIZED ADJOINT METHODS FOR TRANS PORT OF NUCLEARWASTE CONTAMINATION creasingly threatened by organic, inorganic, and radioactive pollutants as well as highlevel nuclear waste developed for use by the Nuclear Regulatory Commission to analyze deep geologic nuclear waste disposal

  11. doi: 10.1098/rsta.2011.0219 , 3709-37273702012Phil. Trans. R. Soc. A

    E-Print Network [OSTI]

    Mukamel, Shaul

    doi: 10.1098/rsta.2011.0219 , 3709-37273702012Phil. Trans. R. Soc. A Jason D. Biggs, Judith A. Voll. BIGGS, JUDITH A. VOLL AND SHAUL MUKAMEL* Department of Chemistry, University of California, Irvine, CA.royalsocietypublishing.orgDownloaded from #12;3710 J. D. Biggs et al. higher dimensional spectroscopy offers the possibility to resolve

  12. J. Chem. Soc., Dalton Trans., 1997, Pages 17391745 1739 Electrochemistry of the coppernickel series of heteropolymetallic

    E-Print Network [OSTI]

    Kounaves, Samuel P.

    DALTON J. Chem. Soc., Dalton Trans., 1997, Pages 17391745 1739 Electrochemistry of the coppernickel, Northeastern University, Boston, MA 02115, USA The electrochemistry of the tetranuclear coppernickel as supporting electrolyte. At potentials more cathodic than 1.0 V the complexes are electrodeposited as Cu

  13. IEEE TRANS. ON SOFTWARE ENGINEERING, 2009 (TO APPEAR) 1 Plat Forms: A Web Development Platform

    E-Print Network [OSTI]

    Prechelt, Lutz

    IEEE TRANS. ON SOFTWARE ENGINEERING, 2009 (TO APPEAR) 1 Plat Forms: A Web Development Platform Comparison by an Exploratory Experiment Searching for Emergent Platform Properties Lutz Prechelt, Member and widely used technological platforms (consisting of a programming language, framework(s), components

  14. Formation of nickel silicide and germanosilicide layers on Si(001), relaxed SiGe/Si(001), and strained Si/relaxed SiGe/Si(001) and effect of postthermal annealing

    SciTech Connect (OSTI)

    Ko, J.H.; Jang, C.H.; Kim, S.H.; Song, Y.-J.; Lee, N.E. [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746 (Korea, Republic of); Semiconductor Division, Electronics and Telecommunications Research Institute, Taejeon 305-700 (Korea, Republic of); School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746 (Korea, Republic of)

    2006-07-15T23:59:59.000Z

    This study compared the formation of nickel silicide or germanosilicide layers on various SiGe based heterostructures as well as the effects of the different annealing schemes (one-step versus two-step annealing) on the morphological, structural, and electrical properties. Uniform nickel silicide or germanosilicide layers were first formed by rapid thermal annealing of various heterostructures. The two-step annealing process of the samples first at 400 deg. C (T{sub A1}) and subsequently at between 600 and 800 deg. C (T{sub A2}) led to an increase in the sheet resistance, which was attributed to the formation of a high-resistivity NiSi{sub 2} phase, the agglomeration of the silicide or germanosilicide layers, and the formation of an amorphous interlayer between the silicide or germanosilicide layers. The lower sheet resistance of the silicide or germanosilicide layers formed on the relaxed-Si{sub 1-x}Ge{sub x} (x=0.15)/Si(001) substrates by two-step annealing compared with that of the samples formed on the strained Si/relaxed SiGe/Si(001) and Si(001) was attributed to the suppression of the high-resistivity NiSi{sub 2} phase as well as the superior thermal stability of the germanosilicide layer formed on the relaxed Si{sub 1-x}Ge{sub x} (x=0.15)/Si(001). The amorphous interlayers formed in the samples annealed using two-step procedure appeared to suppress interface roughening between the silicide or germanosilicide and the SiGe layer presumably due to the reduced Ni and Ge diffusion rate. Here, an amorphous interlayer was formed, which was attributed to the large negative heat of mixing in Ni-Si-Ge systems during the phase transformation and grain growth.

  15. An Outer Planet Beyond Pluto and Origin of the Trans-Neptunian Belt Architecture

    E-Print Network [OSTI]

    Patryk Sofia Lykawka; Tadashi Mukai

    2007-12-13T23:59:59.000Z

    Trans-Neptunian objects (TNOs) are remnants of a collisionally and dynamically evolved planetesimal disk in the outer solar system. This complex structure, known as the trans-Neptunian belt (or Edgeworth-Kuiper belt), can reveal important clues about disk properties, planet formation, and other evolutionary processes. In contrast to the predictions of accretion theory, TNOs exhibit surprisingly large eccentricities, e, and inclinations, i, which can be grouped into distinct dynamical classes. Several models have addressed the origin and orbital evolution of TNOs, but none have reproduced detailed observations, e.g., all dynamical classes and peculiar objects, or provided insightful predictions. Based on extensive simulations of planetesimal disks with the presence of the four giant planets and massive planetesimals, we propose that the orbital history of an outer planet with tenths of Earth's mass can explain the trans-Neptunian belt orbital structure. This massive body was likely scattered by one of the giant planets, which then stirred the primordial planetesimal disk to the levels observed at 40-50 AU and truncated it at about 48 AU before planet migration. The outer planet later acquired an inclined stable orbit (>100 AU; 20-40 deg) because of a resonant interaction with Neptune (an r:1 or r:2 resonance possibly coupled with the Kozai mechanism), guaranteeing the stability of the trans-Neptunian belt. Our model consistently reproduces the main features of each dynamical class with unprecedented detail; it also satisfies other constraints such as the current small total mass of the trans-Neptunian belt and Neptune's current orbit at 30.1 AU. We also provide observationally testable predictions.

  16. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect (OSTI)

    Norris, D. J.; Qiu, Y.; Walther, T. [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Building, Mappin Street, Sheffield S1 3JD (United Kingdom); Dobbie, A.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7A (United Kingdom)

    2014-01-07T23:59:59.000Z

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1?x}Ge{sub x} alloys for germanium concentrations x???0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28?

  17. Effect of nanodot areal density and period on thermal conductivity in SiGe/Si nanodot superlattices

    E-Print Network [OSTI]

    Haller, Gary L.

    Effect of nanodot areal density and period on thermal conductivity in SiGe/Si nanodot superlattices-plane thermal conductivity in SiGe/Si nanodot superlattices NDSLs . For all ND areal densities considered, we found that in SiGe/Si NDSLs decreased monotonically with decreasing period and reached values lower than

  18. ccsd-00097094,version1-21Sep2006 Electron transport through antidot superlattices in Si/SiGe heterostructures: new

    E-Print Network [OSTI]

    Boyer, Edmond

    ccsd-00097094,version1-21Sep2006 Electron transport through antidot superlattices in Si/SiGe investigated the transport properties in a number of Si/SiGe sam- ples with square antidot latticesAs/AlGaAs and Si/SiGe samples with antidot lattices. In samples with a 600 nm lattice period a new series of well

  19. On the design of a 55 GHz Si/SiGe HBT frequency doubler operating close to f max

    E-Print Network [OSTI]

    On the design of a 55 GHz Si/SiGe HBT frequency doubler operating close to f max S. Bruce, M. Kim. Abstract In this paper we present for the first time experimental results on a frequency doubler using a Si/SiGe GHz, for the Si/SiGe HBT, the conversion efficiency in a not completely optimised circuit was found

  20. Single-electron quantum dot in Si/SiGe with integrated charge sensing C. B. Simmons,a

    E-Print Network [OSTI]

    Coppersmith, Susan N.

    Single-electron quantum dot in Si/SiGe with integrated charge sensing C. B. Simmons,a Madhu that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits and measurement of a top-gated quantum dot occupied by a single electron in a Si/SiGe heterostructure. Transport

  1. Ultrathin Strained Si-on-Insulator and SiGe-on-Insulator Created using Low Temperature Wafer Bonding

    E-Print Network [OSTI]

    Ultrathin Strained Si-on-Insulator and SiGe-on-Insulator Created using Low Temperature Wafer, uniform thickness, low defect density, monocrystalline SiGe alloys and strained Si on any desired substrate was developed, allowing for the creation of SiGe-on-insulator and strained Si-on-insulator. After

  2. Propagation of misfit dislocations from buffer/Si interface into Si

    DOE Patents [OSTI]

    Liliental-Weber, Zuzanna (El Sobrante, CA); Maltez, Rogerio Luis (Porto Alegre, BR); Morkoc, Hadis (Richmond, VA); Xie, Jinqiao (Raleigh, VA)

    2011-08-30T23:59:59.000Z

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  3. Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers

    SciTech Connect (OSTI)

    Shaleev, M. V., E-mail: shaleev@ipm.sci-nnov.ru; Novikov, A. V.; Baydakova, N. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Kuznetsov, O. A. [Nizhny Novgorod State University, Physico-Technical Research Institute (Russian Federation); Lobanov, D. N.; Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2011-02-15T23:59:59.000Z

    The effect of variations in the strained Si layer thicknesses, measurement temperature, and optical excitation power on the width of the photoluminescence line produced by self-assembled Ge(Si) nanoislands, which are grown on relaxed SiGe/Si(001) buffer layers and arranged between strained Si layers, is studied. It is shown that the width of the photoluminescence line related to the Ge(Si) islands can be decreased or increased by varying the thickness of strained Si layers lying above and under the islands. A decrease in the width of the photoluminescence line of the Ge(Si) islands to widths comparable with the width of the photoluminescence line of quantum dot (QD) structures based on direct-gap InAs/GaAs semiconductors is attained with consideration of diffusive smearing of the strained Si layer lying above the islands.

  4. High-quality strain-relaxed SiGe films grown with low temperature Si buffer

    SciTech Connect (OSTI)

    Luo, Y. H.; Wan, J.; Forrest, R. L.; Liu, J. L.; Goorsky, M. S.; Wang, K. L.

    2001-06-15T23:59:59.000Z

    High-quality strain-relaxed SiGe templates with a low threading dislocation density and smooth surface are critical for device performance. In this work, SiGe films on low temperature Si buffer layers were grown by solid-source molecular beam epitaxy and characterized by atomic force microscope, double-axis x-ray diffraction, photoluminescence spectroscopy, and Raman spectroscopy. Effects of the growth temperature and the thickness of the low temperature Si buffer were studied. It was demonstrated that when using proper growth conditions for the low temperature Si buffer the Si buffer became tensily strained and gave rise to the compliant effect. The lattice mismatch between the SiGe and the Si buffer layer was reduced. A 500 nm Si{sub 0.7}Ge{sub 0.3} film with a low threading dislocation density as well as smooth surface was obtained by this method. {copyright} 2001 American Institute of Physics.

  5. An rf-carpet electrospray ion source to provide isobaric mass calibrants for trans-uranium elements

    E-Print Network [OSTI]

    S. Naimi; S. Nakamura; Y. Ito; H. Mita; K. Okada; A. Ozawa; P. Schury; T. Sonoda; A. Takamine; M. Wada; H. Wollnik

    2012-12-16T23:59:59.000Z

    For trans-uranium elements, stable atomic isobars do not exist. In order to provide isobaric reference ions for the mass measurement of trans-uranium elements, an electrospray ion source (ESI) was combined with an rf-carpet to collect molecular ions efficiently. The rf-carpet allows for simplification of the pumping system to transport ions from the ESI to a precision mass analyzer. Molecular ions appropriate for isobaric references of trans-uranium elements were extracted from the rf-carpet and analyzed by a multi-reflection time-of-flight mass spectrograph (MRTOF-MS) with a resolving power of $\\rm{R_m} \\gtrsim100,000$.

  6. Excitation wavelength dependent photoluminescence in structurally non-uniform Si/SiGe-island heteroepitxial multilayers

    SciTech Connect (OSTI)

    Modi, N.; Tsybeskov, L. [Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102 (United States); Lockwood, D. J.; Wu, X.; Baribeau, J.-M. [Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario K1A 0R6 (Canada)

    2012-06-01T23:59:59.000Z

    In nanometer-size Si/SiGe-island heteroepitxial multilayers grown on Si(001), low temperature photoluminescence spectra are observed that strongly depend on the excitation wavelength and show a strong correlation with structural properties revealed by transmission electron microscopy. These experimental results can be explained by assuming that the optically created carriers are strongly localized at Si/SiGe island heterointerfaces. We show that electron-hole pairs are generated and recombine within spatial regions mainly defined by the photoexcitation penetration depth, and that the estimated exciton diffusion length is notably short and comparable with the SiGe-island average size.

  7. Magnetron-sputter epitaxy of {beta}-FeSi{sub 2}(220)/Si(111) and {beta}-FeSi{sub 2}(431)/Si(001) thin films at elevated temperatures

    SciTech Connect (OSTI)

    Liu Hongfei; Tan Chengcheh; Chi Dongzhi [Institute of Materials Research and Engineering (IMRE), A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)

    2012-07-15T23:59:59.000Z

    {beta}-FeSi{sub 2} thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 Degree-Sign C. On Si(111), the growth is consistent with the commonly observed orientation of [001]{beta}-FeSi{sub 2}(220)//[1-10]Si(111) having three variants, in-plane rotated 120 Degree-Sign with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]{beta}-FeSi{sub 2}(431)//[110]Si(001) with four variants, which is hitherto unknown for growing {beta}-FeSi{sub 2}. Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between {beta}-FeSi{sub 2} grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of {beta}-FeSi{sub 2}/Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of {beta}-FeSi{sub 2}(431)/Si(001) is larger than that on the surface of {beta}-FeSi{sub 2}(220)/Si(111).

  8. SiD Letter of Intent

    SciTech Connect (OSTI)

    Aihara, H., (Ed.); Burrows, P., (Ed.); Oreglia, M., (Ed.); Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; /Argonne, HEP; Zhang, Q.; /Argonne, HEP /Beijing, Inst. High Energy Phys.; Srivastava, A.; /Birla Inst. Tech. Sci.; Butler, J.M.; /Boston U.; Goldstein, Joel; Velthuis, J.; /Bristol U.; Radeka, V.; /Brookhaven; Zhu, R.-Y.; /Caltech.; Lutz, P.; /DAPNIA, Saclay; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; /CERN /Cornell U., LNS /Ewha Women's U., Seoul /Fermilab /Gent U. /Darmstadt, GSI /Imperial Coll., London /Barcelona, Inst. Microelectron. /KLTE-ATOMKI /Valencia U., IFIC /Cantabria Inst. of Phys. /Louis Pasteur U., Strasbourg I /Durham U., IPPP /Kansas State U. /Kyungpook Natl. U. /Annecy, LAPP /LLNL, Livermore /Louisiana Tech. U. /Paris U., VI-VII /Paris U., VI-VII /Munich, Max Planck Inst. /MIT, LNS /Chicago, CBC /Moscow State U. /Nanjing U. /Northern Illinois U. /Obninsk State Nucl. Eng. U. /Paris U., VI-VII /Strasbourg, IPHC /Prague, Inst. Phys. /Princeton U. /Purdue U. /Rutherford /SLAC /SUNY, Stony Brook /Barcelona U. /Bonn U. /UC, Davis /UC, Santa Cruz /Chicago U. /Colorado U. /Delhi U. /Hawaii U. /Helsinki U. /Indiana U. /Iowa U. /Massachusetts U., Amherst /Melbourne U. /Michigan U. /Minnesota U. /Mississippi U. /Montenegro U. /New Mexico U. /Notre Dame U. /Oregon U. /Oxford U. /Ramon Llull U., Barcelona /Rochester U. /Santiago de Compostela U., IGFAE /Hefei, CUST /Texas U., Arlington /Texas U., Dallas /Tokyo U. /Washington U., Seattle /Wisconsin U., Madison /Wayne State U. /Yale U. /Yonsei U.

    2012-04-11T23:59:59.000Z

    This document presents the current status of the Silicon Detector (SiD) effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R and D needed to provide the technical basis for an optimised SiD.

  9. Motivation Literature Trans. Networks and Emissions Assessment Indices Link Importance Numerical Examples Summary a Environmental Impact Assessment of

    E-Print Network [OSTI]

    Nagurney, Anna

    Examples Summary a Environmental Impact Assessment of Transportation Networks with Degradable Links Environmental Impact Assessment Indices #12;Motivation Literature Trans. Networks and Emissions Assessment is gratefully acknowledged. Anna Nagurney, Qiang Qiang,, Ladimer S. Nagurney Environmental Impact Assessment

  10. Motivation Literature Trans. Networks and Emissions Assessment Indices Link Importance Numerical Examples Summary Environmental Impact Assessment of

    E-Print Network [OSTI]

    Nagurney, Anna

    Examples Summary Environmental Impact Assessment of Transportation Networks with Degradable Links in an Era S. Nagurney Environmental Impact Assessment Indices #12;Motivation Literature Trans. Networks. This support is gratefully acknowledged. Anna Nagurney, Qiang Qiang, Ladimer S. Nagurney Environmental Impact

  11. Design of a model pipeline for testing of piezoelectric micro power generator for the Trans-Alaska Pipeline System

    E-Print Network [OSTI]

    Lah, Mike M. (Mike Myoung)

    2007-01-01T23:59:59.000Z

    In order to provide a reliable corrosion detection system for the Trans-Alaska Pipeline System (TAPS), a distributed wireless self-powered sensor array is needed to monitor the entire length of the pipeline at all times. ...

  12. Design and testing of a low-cost exoskeletal trans-femoral prosthetic knee device for use in developing countries

    E-Print Network [OSTI]

    Sartee, Jared Asher

    2009-01-01T23:59:59.000Z

    Prosthetic devices are designed for amputees in developed countries, made with materials, mechanisms, and research budgets prohibitive to individuals and communities in developing countries. A prosthetic knee for trans-femoral ...

  13. Vehicle Technologies Office Merit Review 2014: Transportation Energy Transition Modeling and Analysis: the LAVE-Trans Model

    Broader source: Energy.gov [DOE]

    Presentation given by Oak Ridge National Laboratory at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about the LAVE-Trans...

  14. A Critical History of Colonization and Amerindian Resistance in Trans-Appalachia 1750-1830: The Proclamation Wars

    E-Print Network [OSTI]

    Arnold, Richard Keith

    2010-05-31T23:59:59.000Z

    A careful examination of events in Colonial Trans-Appalachia the region geographically encompassed by territories west of the Appalachian Mountain Range and east of the Mississippi River at the time of the French and Indian ...

  15. EIS-0450: TransWest Express Transmission Project in Wyoming, Colorado, Utah, and Nevada

    Broader source: Energy.gov [DOE]

    This EIS, prepared jointly by DOE's Western Area Power Administration and the Department of the Interior's Bureau of Land Management (Wyoming State Office), evaluates the potential environmental impacts of granting a right-of-way for the TransWest Express Transmission Project and amending a land use plan. The project consists of an overhead transmission line that would extend approximately 725 miles from south-central Wyoming, through Colorado and Utah. Western proposes to be a joint owner of the project.

  16. Modeling analysis of core-shell Si/SiGe nanowires

    E-Print Network [OSTI]

    Tang, Ming Y., 1979-

    2004-01-01T23:59:59.000Z

    (cont.) a composition that results in a high mobility has a very promising thermoelectric performance. Lastly, the thermoelectric-related transport properties for a Si/SiGe core-shell nanowire are compared with the related ...

  17. Amorphization of nanocrystalline 3C-SiC irradiated with Si+ ions...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    interface and interior amorphization. Citation: Jiang W, H Wang, I Kim, Y Zhang, and WJ Weber.2010."Amorphization of nanocrystalline 3C-SiC irradiated with Si+ ions."Journal of...

  18. Stopping power measurements of He ions in Si and SiC by time...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    power measurements of He ions in Si and SiC by time-of-flight spectrometry. Abstract: Electronic energy loss is the fundamental mechanism accountable for the response of...

  19. Behavior of Si and C atoms in ion amorphized SiC. | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    analysis. Neither Si nor C in the amorphized SiC exhibits a significant mass transport by diffusion during the irradiation and subsequent storage at room temperature. There is no...

  20. Strained-Si/SiGe enhancement mode structures for quantum computing.

    SciTech Connect (OSTI)

    Savage, Donald (University of Wisconsin-Madison); Bishop, Nathaniel; Lilly, Michael Patrick; Carroll, Malcolm S.; Ten Eyck, Gregory A.

    2010-03-01T23:59:59.000Z

    Silicon is an ideal system for investigating single electron or isolated donor spins for quantum computation, due to long spin coherence times. Enhancement mode strained-silicon/silicon germanium (sSi/SiGe) devices would offer an as-yet untried path toward electron or electron/donor quantum dot systems. Thin, undoped SiGe dielectrics allow tight electrostatic confinement, as well as potential Lande g-factor engineered spin manipulation. In this talk we summarize recent progress toward sSi/SiGe enhancement mode devices on sSi on insulator, including characterization with X-ray diffraction and atomic force microscopy, as well as challenges faced and progress on integration of either top-down and bottom-up donor placement approaches in a sSi/SiGe enhancement mode structure.

  1. Limited-area growth of Ge and SiGe on Si

    E-Print Network [OSTI]

    Kim, Meekyung, Ph. D. Massachusetts Institute of Technology

    2011-01-01T23:59:59.000Z

    The goal of this thesis is to develop and understand processing conditions that improve the surface morphology and reduce the dislocation density in limited-area heteroepitaxy of Ge and SiGe on Si (100) substrates. Low ...

  2. Investigation of lateral gated quantum devices in Si/SiGe heterostructures

    E-Print Network [OSTI]

    Lai, Andrew P. (Andrew Pan)

    2013-01-01T23:59:59.000Z

    Quantum dots in Si/SiGe have long spin decoherence times, due to the low density of nuclear spins and weak coupling between nuclear and electronic spins. Because of this, they are excellent candidates for use as solid state ...

  3. MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels

    E-Print Network [OSTI]

    Fitzgerald, Eugene A.

    Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with ...

  4. The effect of surface conductance on lateral gated quantum devices in Si/SiGe heterostructures

    E-Print Network [OSTI]

    Lin, Xi

    Quantum dots in Si/SiGe heterostructures are expected to have relatively long electron spin decoherence times, because of the low density of nuclear spins and the weak coupling between nuclear and electron spins. We provide ...

  5. Effect of irradiation on thermal expansion of SiC{sub f}/SiC composites

    SciTech Connect (OSTI)

    Senor, D.J. [Pacific Northwest Lab., Richland, WA (United States); Trimble, D.J. [Westinghouse Hanford Co., Richland, WA (United States); Woods, J.J. [Lockheed Martin, Schenectady, NY (United States)

    1996-06-01T23:59:59.000Z

    Linear thermal expansion was measured on five different SiC-fiber-reinforced/SiC-matrix (SiC{sub f}/SiC) composite types in the unirradiated and irradiated conditions. Two matrices were studied in combination with Nicalon CG reinforcement and a 150 nm PyC fiber/matrix interface: chemical vapor infiltrated (CVI) SiC and liquid-phase polymer impregnated precursor (PIP) SiC. Composites of PIP SiC with Tyranno and HPZ fiber reinforcement and a 150 nm PyC interface were also tested, as were PIP SiC composites with Nicalon CG reinforcement and a 150 nm BN fiber/matrix interface. The irradiation was conducted in the Experimental Breeder Reactor-II at a nominal temperature of 1,000 C to doses of either 33 or 43 dpa-SiC. Irradiation caused complete fiber/matrix debonding in the CVI SiC composites due to a dimensional stability mismatch between fiber and matrix, while the PIP SiC composites partially retained their fiber/matrix interface after irradiation. However, the thermal expansion of all the materials tested was found to be primarily dependent on the matrix and independent of either the fiber or the fiber/matrix interface. Further, irradiation had no significant effect on thermal expansion for either the CVI SiC or PIP SiC composites. In general, the thermal expansion of the CVI SiC composites exceeded that of the PIP SiC composites, particularly at elevated temperatures, but the expansion of both matrix types was less than chemical vapor deposited (CVD) {beta}-SiC at all temperatures.

  6. Cubic GaN on Nanopatterned 3C-SiC/Si (001) Substrates

    E-Print Network [OSTI]

    As, Donat Josef

    Chapter 15 Cubic GaN on Nanopatterned 3C-SiC/Si (001) Substrates Ricarda Maria Kemper, Donat Josef relaxed cubic GaN by plasma-assisted molecular beam epitaxy on prepat- terned 3C-SiC/Si (001) substrates) process. We analyze the influence of the substrate on the GaN growth and show that it is possible to grow

  7. Raman scattering in Si/SiGe nanostructures: Revealing chemical composition, strain, intermixing, and heat dissipation

    SciTech Connect (OSTI)

    Mala, S. A.; Tsybeskov, L., E-mail: tsybesko@njit.edu [Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102 (United States); Lockwood, D. J.; Wu, X.; Baribeau, J.-M. [National Research Council, Ottawa, Ontario K1A 0R6 (Canada)

    2014-07-07T23:59:59.000Z

    We present a quantitative analysis of Raman scattering in various Si/Si{sub 1-x}Ge{sub x} multilayered nanostructures with well-defined Ge composition (x) and layer thicknesses. Using Raman and transmission electron microscopy data, we discuss and model Si/SiGe intermixing and strain. By analyzing Stokes and anti-Stokes Raman signals, we calculate temperature and discuss heat dissipation in the samples under intense laser illumination.

  8. Steroselective metabolism of dizen(a,h)anthracene to trans-dihydrodiols and their activation to bacterial mutagens

    SciTech Connect (OSTI)

    Platt, K.L.; Schollmeier, M.; Frank, H.; Oesch, F. (Univ. of Mainz (West Germany))

    1990-08-01T23:59:59.000Z

    Dibenz(a,h)anthracene (DBA), a carcinogenic, polycyclic aromatic hydrocarbon ubiquitous in the environment, is metabolized by the hepatic microsomal fraction of immature Sprague-Dawley rats pretreated with Aroclor 1254 to 27 ethyl acetate-extractable metabolites. More than half of these metabolites (51%) consisted of trans-1,2-; -3,4-; and -5,6-dihydrodiols including their identified secondary metabolites. The three trans-dihydrodiols were highly enriched in their R,R enantiomers as determined by high performance liquid chromatography on suitable chiral stationary phases. Determination of the bacterial mutagenicity by measuring the reversion rate of histidine-dependent Salmonella typhimurium TA100 to histidine prototrophy revealed marked differences in the mutagenicity of the enantiomers of the trans-dihydrodiols of DBA when activated by the same metabolizing system as used in the metabolism studies. In the case of trans-1,2- and -5,6-dihydrodiol, the S,S enantiomers were converted to more mutagenic metabolites than their corresponding optical antipodes, whereas in the case of trans-3,4-dihydrodiol it was the R,R enantiomer that produced the stronger mutagens. Therefore, both regio- and stereoselectivity of the metabolizing enzymes attribute to the dominant role of trans-3,4-dihydrodiol in the mutagenicity of DBA.

  9. Room-temperature 1.3 pm electroluminescence from strained Si, -,Ge,/Si quantum wells

    E-Print Network [OSTI]

    Room-temperature 1.3 pm electroluminescence from strained Si, -,Ge,/Si quantum wells Q. Mi, X. Xiao report the first room-temperature 1.3 ,um electroluminescence from strained Sir-,Ge,/Si quantum wells to that from the Sit-,GeX wells. A minimum band offset is required to have effective room

  10. Selective-area room temperature visible photoluminescence from SiC/Si heterostructures

    E-Print Network [OSTI]

    Steckl, Andrew J.

    shown8 to produce monocrystalline thin films, while minimizing the high temperature exposure. The Sic mismatch, heteroepitaxial growth of Sic films on Si has been achieved by several groups?-' In addition, SicSi. For example, polycrystalline Sic deposited on Si after it is rendered porous has been utilized9

  11. SUPPORTING INFORMATION Si Microwire Solar Cells: Improved Efficiency with a

    E-Print Network [OSTI]

    S1 SUPPORTING INFORMATION Si Microwire Solar Cells: Improved Efficiency with a Conformal SiO2 Layer Technologies, 174 Haverhill Road, Topsfield, MA 01983 School of Engineering and Applied Sciences, Harvard improvements (%) of Si microwire solar cells (6 m height) after conformal SiO2 coating SiO2 thickness Jsc

  12. SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication

    E-Print Network [OSTI]

    SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication Zhiyuan Cheng, E. A. Fitzgerald, and D with less defects in SiGe film, but the SiGe film uniformity is inferior. "Smart-cut" approach has better control on the SiGe film thickness and uniformity, and is applicable to wider Ge content range of the SiGe

  13. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 11, NO. 10, OCTOBER 2001 401 Reliability of Microwave SiGe/Si Heterojunction

    E-Print Network [OSTI]

    Rieh, Jae-Sung

    of Microwave SiGe/Si Heterojunction Bipolar Transistors Zhenqiang Ma, Student Member, IEEE, Pallab Bhattacharya, Member, IEEE, and Edward T. Croke Abstract--The degradation behavior of NPN Si/SiGe/Si het- erojunction, REID, SiGe HBT. I. INTRODUCTION THE FAVORABLE high-frequency characteristics exhib- ited by Si/SiGe

  14. Monolayer-induced band shifts at Si(100) and Si(111) surfaces

    SciTech Connect (OSTI)

    Mkinen, A. J., E-mail: Antti.Makinen@nrl.navy.mil; Kim, Chul-Soo; Kushto, G. P. [Naval Research Laboratory, 4555 Overlook Avenue, Washington, DC 20375 (United States)

    2014-01-27T23:59:59.000Z

    We report our study of the interfacial electronic structure of Si(100) and Si(111) surfaces that have been chemically modified with various organic monolayers, including octadecene and two para-substituted benzene derivatives. X-ray photoelectron spectroscopy reveals an upward band shift, associated with the assembly of these organic monolayers on the Si substrates, that does not correlate with either the dipole moment or the electron withdrawing/donating character of the molecular moieties. This suggests that the nature and quality of the self-assembled monolayer and the intrinsic electronic structure of the semiconductor material define the interfacial electronic structure of the functionalized Si(100) and Si(111) surfaces.

  15. Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions

    E-Print Network [OSTI]

    Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions-Si and SiGe-on-insulator were fabricated, combining both the benefits of high-mobility strained-Si and SOI) to oxidized handle wafers. Layer transfer onto insulating handle wafers can be accomplished using grind

  16. INFLUENCE OF SUBSTRATE OFF-CUT ON THE DEFECT STRUCTURE IN RELAXED GRADED Si-Ge/Si LAYERS

    E-Print Network [OSTI]

    INFLUENCE OF SUBSTRATE OFF-CUT ON THE DEFECT STRUCTURE IN RELAXED GRADED Si-Ge/Si LAYERS SRIKANTH B and Engineering, University of California, Los Angeles, CA 90095. ABSTRACT Relaxed graded Si-Ge/Si layers can of these applications requires a different final Ge concentration in the graded Si-Ge layer. With increasing Ge content

  17. SiGe-free strained Si on insulator by wafer bonding and layer transfer T. A. Langdo,a)

    E-Print Network [OSTI]

    SiGe-free strained Si on insulator by wafer bonding and layer transfer T. A. Langdo,a) M. T. Currie; accepted 4 April 2003 SiGe-free strained Si on insulator substrates were fabricated by wafer bonding even after SiGe layer removal. The strain in the structure is thermally stable during 1000 C anneals

  18. Suppression of structural imperfection in strained Si by utilizing SiGe bulk substrate

    SciTech Connect (OSTI)

    Usami, N.; Nose, Y.; Fujiwara, K.; Nakajima, K. [Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2006-05-29T23:59:59.000Z

    We attempted to utilize homemade SiGe bulk crystal as a substrate for epitaxy of strain-controlled heterostructures. X-ray reciprocal space mapping clarified that the growth of a Si thin film on a SiGe bulk substrate leads to reduction in the orientation fluctuation compared with that on a SiGe virtual substrate. Furthermore, analysis of Raman spectra revealed a dramatic decrease of the strain fluctuation in the strained Si film on the SiGe bulk substrate. These results suggest that the SiGe bulk crystal can be utilized as a substrate for various strain-controlled heterostructures for fundamental studies as well as improvement of device performance.

  19. SiGe/sSi quantum dot electron spin decoherence dependence on $^{73}$Ge

    E-Print Network [OSTI]

    Witzel, Wayne M; Carroll, Malcolm S

    2011-01-01T23:59:59.000Z

    We theoretically study the nuclear spin induced decoherence of a quantum dot in Si that is confined at a SiGe interface. We calculate decoherence time dependence on $^{73}$Ge in the barrier layer to evaluate the importance of Ge as well as Si enrichment for long decoherence times. We use atomistic tight-binding modeling for an accurate account of the electron wavefunction which is particularly important for determining the contact hyperfine interactions with the Ge nuclear spins. We find decoherence times due to Ge spins at natural concentrations to be milliseconds. This suggests SiGe/sSi quantum dot devices employing enriched Si will require enriched Ge as well in order to benefit from long coherence times. We provide a comparison of $T_2$ times for various fractions of nonzero spin isotopes of Si and Ge.

  20. SiGe/Si quantum dot electron spin decoherence dependence on $^{73}$Ge

    E-Print Network [OSTI]

    Wayne M. Witzel; Rajib Rahman; Malcolm S. Carroll

    2012-05-14T23:59:59.000Z

    We theoretically study the nuclear spin induced decoherence of a quantum dot in Si that is confined at a SiGe interface. We calculate decoherence time dependence on $^{73}$Ge in the barrier layer to evaluate the importance of Ge as well as Si enrichment for long decoherence times. We use atomistic tight-binding modeling for an accurate account of the electron wavefunction which is particularly important for determining the contact hyperfine interactions with the Ge nuclear spins. We find decoherence times due to Ge spins at natural concentrations to be milliseconds. This suggests SiGe/Si quantum dot devices employing enriched Si will require enriched Ge as well in order to benefit from long coherence times. We provide a comparison of $T_2$ times for various fractions of nonzero spin isotopes of Si and Ge.

  1. quera que le coefficient )'2 de la formule (2) n'a pas la mme significa-tion que ~ de la formule (1). ~,z n'existe que s'il y a chute de tempra-

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    ~~~ia- tion. Ces observations prouvent que l'effet Peltier au contact Bi-Cu n'est pas modifi par le champ and available at http://dx.doi.org/10.1051/jphystap:0190100100069101 #12;692 que celles de la rflexion totale

  2. Bogs are a specialized wetland community with saturated, acidic, peat soils that have low concentra-tions of minerals (e.g., calcium, magnesium) and essential nutrients (phosphorus, nitrogen). They

    E-Print Network [OSTI]

    US Army Corps of Engineers

    , acidic, peat soils that have low concentra- tions of minerals (e.g., calcium, magnesium) and essential of living Sphagnum mosses growing over a layer of saturated, acidic peat. Sedges, forbs and/or the low), pitcher plant (Sarracenia purpurea) and sundew (Drosera rotundifolia). SOILS: Fibric peat (Histosols

  3. Monolithic Ge-on-Si lasers for integrated photonics

    E-Print Network [OSTI]

    Liu, Jifeng

    We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility ...

  4. Atomic and electronic structures of rubidium adsorption on Si...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    electronic structures of rubidium adsorption on Si(001)(2 x 1) surface: Comparison with CsSi(001) surface. Atomic and electronic structures of rubidium adsorption on Si(001)(2 x...

  5. Germanium: From Its Discovery to SiGe Devices

    E-Print Network [OSTI]

    Haller, E.E.

    2006-01-01T23:59:59.000Z

    From Its Discovery to SiGe Devices E.E. Haller Department ofrapidly rising interest in SiGe alloys, we are just startingstrained and unstrained SiGe multilayer structures [58]. 9.

  6. On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates

    SciTech Connect (OSTI)

    Kutsukake, Kentaro; Usami, Noritaka; Ujihara, Toru; Fujiwara, Kozo; Sazaki, Gen; Nakajima, Kazuo [Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)

    2004-08-23T23:59:59.000Z

    We investigated the microscopic strain fluctuation in strained-Si grown on SiGe-on-insulator (SGOI) and SiGe virtual substrates, and clarified the origins of the strain fluctuation in the strained-Si film. A periodic strain fluctuation, which reflects a cross-hatch pattern of the substrate, was observed in the sample on the virtual substrate. On the other hand, a featureless strain fluctuation with suppressed amplitude was observed in the sample on SGOI substrate. By analyzing the correlation of the Raman peak positions of the Si-Si modes in strained-Si and SiGe, the dominant mechanism of the strain fluctuation in the strained Si film was found to be the compositional fluctuation in underlying SiGe for the sample on SGOI, and the strain fluctuation reflecting the cross-hatch pattern for the sample on the virtual substrate, respectively.

  7. H. R. 3277: Trans-Alaska Pipeline System Reform Act of 1989. Introduced in the House of Representatives, One Hundredth First Congress, First Session, September 14, 1989

    SciTech Connect (OSTI)

    Not Available

    1989-01-01T23:59:59.000Z

    The bill would improve Federal laws relating to the Trans-Alaska Pipeline System in light of the recent Valdez oil spill and its environmental consequences. The bill explains provisions for the Trans-Alaska Pipeline System fund and liability; the Trans-Alaska Pipeline System trust fund; improvement of the pipeline system (establishes a Presidential task force); Alaska oil spill recovery institute; penalties; provisions applicable to Alaska natives; and state laws and programs.

  8. Synthesis and Characterization of Structured Si-Carbon Nanocomposite...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Structured Si-Carbon Nanocomposite Anodes and Functional Polymer Binders Synthesis and Characterization of Structured Si-Carbon Nanocomposite Anodes and Functional Polymer Binders...

  9. Rolling up SiGe on insulator

    SciTech Connect (OSTI)

    Cavallo, F.; Songmuang, R.; Ulrich, C.; Schmidt, O. G. [Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart (Germany)

    2007-05-07T23:59:59.000Z

    SiGe on insulator films of 10-50 nm thickness are fabricated by Ge condensation applying different oxidation times. The layers are released from the substrate by selectively etching the insulator film. Due to the varying Ge composition, the layers bend downward toward the substrate surface and roll up into microtubes. Depending on the Ge condensation, the strain distribution in the SiGe layers varies and allows a scaling of the tube diameters between 1 and 4 {mu}m. Assuming pseudomorphic SiGe layers, the tube diameters are smaller than expected from continuum mechanical theory. This suggests the occurrence of additional strain in the oxidized films.

  10. Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded SiGe/Si*

    E-Print Network [OSTI]

    Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded SiGe the sudden rise in threading dislocation density in Ge-rich relaxed graded SiGe layers grown at higher growth systems, including relaxed graded SiGe on Si substrates i.e., x Si1-xGex /Si ,1,2 InGaP on GaP substrates

  11. Excited state behavior of trans-styrylnaphthalenes in the subnanosecond time region

    SciTech Connect (OSTI)

    Aloisi, G. G.; Elisei, F.; Mazzucato, U.; Latterini, L.; Rodgers, M. A. J. [Dipartimento di Chimica, Universita di Perugia, I-06123 Perugia (Italy); Center for Photochemical Sciences, Bowling Green State University, Bowling Green, Ohio 43403 (United States)

    1996-04-01T23:59:59.000Z

    Picosecond absorption measurements of the trans isomers of 1- and 2-styrylnaphthalene were carried out in different solvents. In all cases, a bi-exponential decay of the transient spectrum was observed. The two components were assigned to the two lowest excited singlet states of mixed ethylenic and naphthalenic character. Temperature and excitation energy may change the relative contribution of the two states, thus favoring the radiative (naphthalenic) or reactive (ethylenic) relaxation channels. The study of interactions with electron donors showed that both singlets are involved in charge-transfer reactions.

  12. EA-262 TransCanada Power Marketing Ltd | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny:Revised Finding of No53197EFindingEA-257-C Emera EnergyEA-262 TransCanada Power

  13. EA-262-A TransCanada Power Marketing Ltd | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny:Revised Finding of No53197EFindingEA-257-C Emera EnergyEA-262 TransCanada Power62-A

  14. EA-262-B TransCanada Power Marketing Ltd | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny:Revised Finding of No53197EFindingEA-257-C Emera EnergyEA-262 TransCanada

  15. EA-262-C TransCanada Power Marketing Ltd | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny:Revised Finding of No53197EFindingEA-257-C Emera EnergyEA-262 TransCanadaEA-262-C

  16. EA-216 TransAlta Energy Marketing (U.S) Inc | Department of Energy

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 1112011AT&T,Office of Policy,Policy5-FEB. 15,5:Plant, Amarillo, TexasEA-216 TransAlta Energy

  17. TransCanada Power Mktg Ltd (New York) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlin Baxin Hydropower StationTown ofTown ofTownTransCanada Power Mktg Ltd

  18. TransCanada Power Mktg Ltd (Rhode Island) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlin Baxin Hydropower StationTown ofTown ofTownTransCanada Power Mktg

  19. Thermally Processed High-Mobility MOS Thin-Film Transistors on Transferable Single-Crystal Elastically Strain-Sharing Si/SiGe/Si Nanomembranes

    SciTech Connect (OSTI)

    Yuan, H.-C.; Kelly, M. M.; Savage, D. E.; Lagally, M. G.; Celler, G. K.; Zhenqiang, M.

    2008-03-01T23:59:59.000Z

    Demonstration of high-performance MOS thin-film transistors (TFTs) on elastically strain-sharing single-crystal Si/SiGe/Si nanomembranes (SiNMs) that are transferred to foreign substrates is reported. The transferable SiNMs are realized by first growing pseudomorphic SiGe and Si layers on silicon-on-insulator (SOI) substrates, and then, selectively removing the buried oxide (BOX) layer from the SOI. Before the release, only the SiGe layer is compressively strained. Upon release, part of the compressive strain in the SiGe layer is transferred to the thin Si layers, and the Si layers, thus, become tensile strained. Both the initial compressive strain state in the SiGe layer and the final strain sharing state between the SiGe and the Si layers are verified with X-ray diffraction measurements. The TFTs are fabricated employing the conventional high-temperature MOS process on the strain-shared SiNMs that are transferred to an oxidized Si substrate. The transferred strained-sharing SiNMs show outstanding thermal stability and can withstand the high-temperature TFT process on the new host substrate. The strained-channel TFTs fabricated on the new host substrate show high current drive capability and an average electron effective mobility of 270 cm{sup 2}/V ldr s. The results suggest that transferable and thermally stable single-crystal elastically strain- sharing SiNMs can serve as excellent active material for high-speed device application with a simple and scalable transfer method. The demonstration of MOS TFTs on the transferable nanomembranes may create the opportunity for future high-speed Si CMOS heterogeneous integration on any substrate.

  20. Flex Fuel Optimized SI and HCCI Engine

    Broader source: Energy.gov (indexed) [DOE]

    12 439,489 Barriers - Target: Demonstrate a SI and HCCI dual combustion mode engine for a blend of gasoline and E85 for the best fuel economy - Development of a cost...

  1. Si Einstein m'tait cont

    E-Print Network [OSTI]

    Damour, Thibault

    Si Einstein m'tait cont Regard sur la rela5vit et le temps Thibault Damour (IHS) #12; EINSTEIN scien5fique, mari, pre, ami, amant, musicien, juif, sioniste, homme engag, navigateur, ... EINSTEIN et la joie de

  2. Size dependent optical properties of Si quantum dots in Si-rich nitride/Si{sub 3}N{sub 4} superlattice synthesized by magnetron sputtering

    SciTech Connect (OSTI)

    So, Yong-Heng; Huang, Shujuan; Conibeer, Gavin; Green, Martin A. [ARC Photovoltaics Centre of Excellence, University of New South Wales, Sydney, New South Wales 2052 (Australia); Gentle, Angus [Physics and Advanced Materials, University of Technology Sydney, P. O. Box 123, Broadway, New South Wales 2007 (Australia)

    2011-03-15T23:59:59.000Z

    A spectroscopic ellipsometry compatible approach is reported for the optical study of Si quantum dots (QDs) in Si-rich nitride/silicon nitride (SRN/Si{sub 3}N{sub 4}) superlattice, which based on Tauc-Lorentz model and Bruggeman effective medium approximation. It is shown that the optical constants and dielectric functions of Si QDs are strongly size dependent. The suppressed imaginary dielectric function of Si QDs exhibits a single broad peak analogous to amorphous Si, which centered between the transition energies E{sub 1} and E{sub 2} of bulk crystalline Si and blue shifted toward E{sub 2} as the QD size reduced. A bandgap expansion observed by the TL model when the size of Si QD reduced is in good agreement with the PL measurement. The bandgap expansion with the reduction of Si QD size is well supported by the first-principles calculations based on quantum confinement.

  3. ZnO/porous-Si and TiO{sub 2}/porous-Si nanocomposite nanopillars

    SciTech Connect (OSTI)

    Wang, Dong, E-mail: dong.wang@tu-ilmenau.de; Yan, Yong; Schaaf, Peter [Chair Materials for Electronics, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies MacroNano, TU Ilmenau, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany); Sharp, Thomas [Oxford Instruments Plasma Technology Ltd., Yatton, Bristol BS49 4AP (United Kingdom); Schnherr, Sven; Ronning, Carsten [Institute for Solid State Physics, Friedrich Schiller University Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Ji, Ran [SUSS MicroTec Lithography GmbH, Schleissheimer Str. 90, 85748 Garching (Germany)

    2015-01-01T23:59:59.000Z

    Porous Si nanopillar arrays are used as templates for atomic layer deposition of ZnO and TiO{sub 2}, and thus, ZnO/porous-Si and TiO{sub 2}/porous-Si nanocomposite nanopillars are fabricated. The diffusion of the precursor molecules into the inside of the porous structure occurs via Knudsen diffusion and is strongly limited by the small pore size. The luminescence of the ZnO/porous-Si nanocomposite nanopillars is also investigated, and the optical emission can be changed and even quenched after a strong plasma treatment. Such nanocomposite nanopillars are interesting for photocatalysis and sensors.

  4. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

    SciTech Connect (OSTI)

    Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2011-07-15T23:59:59.000Z

    Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

  5. Response of SiC/SiC to Transient Thermal Conditions: A Review

    SciTech Connect (OSTI)

    Jones, Russell H.

    2001-06-30T23:59:59.000Z

    The database on thermal shock behavior of SiC/SiC composites is very limited. The existing data suggests continuous fiber ceramic matrix composites, such as SiC/SiC, exhibit very good thermal shock characteristics but most data was obtained for -Delta T conditions as a result of quenching from an elevated temperature. Thermal shock in a fusion energy system will result from plasma discharge and will result in a +Delta T. One study was reported for SiC/SiC composites given a +Delta T with no loss in strength following 25 cycles at a heating rate of 1700 degrees C/s. Monolithic SiC failed in 1.5 cycles at a heating rate of 1400 degrees C/s. Thermal fatigue test results also suggest that SiC/SiC composites will exhibit little or no degradation for 100's of cycles. It was estimated that radiation could, in an extreme case, cause a reduction in the thermal shock performance from a calculated Delta Tc of 957K to about 300K if the fiber strength is reduced by 50%. Newer composites with greater radiation resistance should have a much smaller change in the Delta Tc.

  6. Straining of SiGe ultrathin films with mesoporous Si substrates

    SciTech Connect (OSTI)

    Boucherif, A.; Guillot, G.; Lysenko, V. [Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Universite de Lyon, Villeurbanne F-69621 (France); Blanchard, N. P.; Regreny, P.; Grenet, G. [Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Ecole Centrale de Lyon, Universite de Lyon, Ecully F-69134 (France); Marty, O. [Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Universite Lyon 1, Universite de Lyon, Villeurbanne F-69622 (France)

    2010-09-27T23:59:59.000Z

    We report on the fabrication and characterization of ultrathin (down to 50 nm) tensile strained SiGe films on mesoporous Si substrates. Low temperature oxidation of the porous substrate relaxes the compressive strain in the as grown monocrystalline (mc) SiGe. Applying this method to a 50 nm thick mc-Si{sub 0.72}Ge{sub 0.28} film, a tensile strain >0.78% can be achieved without compromising crystalline quality and up to 1.45 % without the appearance of cracks.

  7. Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates

    SciTech Connect (OSTI)

    Gatti, R.; Boioli, F.; Montalenti, F.; Miglio, Leo [L-NESS and Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano-Bicocca, via R. Cozzi 53, I-20125 Milano (Italy); Grydlik, M.; Brehm, M.; Groiss, H.; Glaser, M.; Fromherz, T.; Schaeffler, F. [Institut fuer Halbleiter- und Festkoerperphysik, Johannes Kepler Universitaet, Altenberger Str. 69, A-4040 Linz (Austria)

    2011-03-21T23:59:59.000Z

    We demonstrate dislocation engineering without oxide masks. By using finite element simulations we show how nanopatterning of Si substrates with (111) trenches provides anisotropic elastic relaxation in a SiGe film, generates preferential nucleation sites for dislocation loops, and allows for dislocation trapping, leaving wide areas free of threading dislocations. These predictions are confirmed by atomic force and transmission electron microscopy performed on overcritical Si{sub 0.7}Ge{sub 0.3} films. These were grown by molecular beam epitaxy on a Si(001) substrate patterned with periodic arrays of selectively etched (111)-terminated trenches.

  8. Characterization of SiGe/Si multi-quantum wells for infrared sensing

    SciTech Connect (OSTI)

    Moeen, M.; Salemi, A.; stling, M.; Radamson, H. H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640 Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)] [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

    2013-12-16T23:59:59.000Z

    SiGe epitaxial layers are integrated as an active part in thermal detectors. To improve their performance, deeper understanding of design parameters, such as thickness, well periodicity, quality, and strain amount, of the layers/interfaces is required. Oxygen (22500??10{sup ?9}?Torr) was exposed prior or during epitaxy of SiGe/Si multilayers. In this range, samples with 10?nTorr oxygen were processed to investigate layer quality and noise measurements. Temperature coefficient of resistance was also measured to evaluate the thermal response. These results demonstrate sensitivity of SiGe-based devices to size and location of defects in the structure.

  9. HIGH-ENERGY NEUTRINO AND GAMMA-RAY TRANSIENTS FROM TRANS-RELATIVISTIC SUPERNOVA SHOCK BREAKOUTS

    SciTech Connect (OSTI)

    Kashiyama, Kazumi; Gao, Shan; Meszaros, Peter [Center for Particle and Gravitational Astrophysics, Department of Astronomy and Astrophysics, Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Murase, Kohta; Horiuchi, Shunsaku, E-mail: kzk15@psu.edu [CCAPP and Department of Physics, Ohio State University, 191 W. Woodruff Avenue, Columbus, OH 43210 (United States)

    2013-05-20T23:59:59.000Z

    Trans-relativistic shocks that accompany some supernovae (SNe) produce X-ray burst emissions as they break out in the dense circumstellar medium around the progenitors. This phenomenon is sometimes associated with peculiar low-luminosity gamma-ray bursts (LL GRBs). Here, we investigate the high-energy neutrino and gamma-ray counterparts of such a class of SNe. Just beyond the shock breakout radius, particle acceleration in the collisionless shock starts to operate in the presence of breakout photons. We show that protons may be accelerated to sufficiently high energies and produce high-energy neutrinos and gamma rays via the photomeson interaction. These neutrinos and gamma rays may be detectable from {approx}< 10 Mpc away by IceCube/KM3Net as multi-TeV transients almost simultaneously with the X-ray breakout, and even from {approx}< 100 Mpc away with follow-up observations by the Cherenkov Telescope Array using a wide-field sky monitor like Swift as a trigger. A statistical technique using a stacking approach could also be possible for the detection, with the aid of the SN optical/infrared counterparts. Such multi-messenger observations offer the possibility to probe the transition of trans-relativistic shocks from radiation-mediated to collisionless ones, and would also constrain the mechanisms of particle acceleration and emission in LL GRBs.

  10. MONTE CARLO SIMULATIONS OF NONLINEAR PARTICLE ACCELERATION IN PARALLEL TRANS-RELATIVISTIC SHOCKS

    SciTech Connect (OSTI)

    Ellison, Donald C.; Warren, Donald C. [Physics Department, North Carolina State University, Box 8202, Raleigh, NC 27695 (United States); Bykov, Andrei M., E-mail: don_ellison@ncsu.edu, E-mail: ambykov@yahoo.com [Ioffe Institute for Physics and Technology, 194021 St. Petersburg (Russian Federation)

    2013-10-10T23:59:59.000Z

    We present results from a Monte Carlo simulation of a parallel collisionless shock undergoing particle acceleration. Our simulation, which contains parameterized scattering and a particular thermal leakage injection model, calculates the feedback between accelerated particles ahead of the shock, which influence the shock precursor and 'smooth' the shock, and thermal particle injection. We show that there is a transition between nonrelativistic shocks, where the acceleration efficiency can be extremely high and the nonlinear compression ratio can be substantially greater than the Rankine-Hugoniot value, and fully relativistic shocks, where diffusive shock acceleration is less efficient and the compression ratio remains at the Rankine-Hugoniot value. This transition occurs in the trans-relativistic regime and, for the particular parameters we use, occurs around a shock Lorentz factor ?{sub 0} = 1.5. We also find that nonlinear shock smoothing dramatically reduces the acceleration efficiency presumed to occur with large-angle scattering in ultra-relativistic shocks. Our ability to seamlessly treat the transition from ultra-relativistic to trans-relativistic to nonrelativistic shocks may be important for evolving relativistic systems, such as gamma-ray bursts and Type Ibc supernovae. We expect a substantial evolution of shock accelerated spectra during this transition from soft early on to much harder when the blast-wave shock becomes nonrelativistic.

  11. Boundary Effective Field Theory and Trans-Planckian Perturbations: Astrophysical Implications

    E-Print Network [OSTI]

    Richard Easther; William H. Kinney; Hiranya Peiris

    2005-07-01T23:59:59.000Z

    We contrast two approaches to calculating trans-Planckian corrections to the inflationary perturbation spectrum: the New Physics Hypersurface [NPH] model, in which modes are normalized when their physical wavelength first exceeds a critical value, and the Boundary Effective Field Theory [BEFT] approach, where the initial conditions for all modes are set at the same time, and modified by higher dimensional operators enumerated via an effective field theory calculation. We show that these two approaches -- as currently implemented -- lead to radically different expectations for the trans-Planckian corrections to the CMB and emphasize that in the BEFT formalism we expect the perturbation spectrum to be dominated by quantum gravity corrections for all scales shorter than some critical value. Conversely, in the NPH case the quantum effects only dominate the longest modes that are typically much larger than the present horizon size. Furthermore, the onset of the breakdown in the standard inflationary perturbation calculation predicted by the BEFT formalism is likely to be associated with a feature in the perturbation spectrum, and we discuss the observational signatures of this feature in both CMB and large scale structure observations. Finally, we discuss possible modifications to both calculational frameworks that would resolve the contradictions identified here.

  12. Comparative analysis of radiation effects on the electroluminescence of Si and SiGe/Si(001) heterostructures with self-assembled Islands

    SciTech Connect (OSTI)

    Krasilnik, Z. F.; Kudryavtsev, K. E. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Kachemtsev, A. N. [Sedakov Scientific-Research Institute (Russian Federation); Lobanov, D. N., E-mail: dima@ipm.sci-nnov.ru; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Obolenskiy, S. V. [Nizhni Novgorod State University (Russian Federation); Shengurov, D. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2011-02-15T23:59:59.000Z

    The effect of neutron radiation on the electroluminescence of the Si p-i-n diode containing a multilayered Ge/Si heterostructure with self-assembled nanoislands is studied. In comparison with bulk Si, the diodes containing Ge(Si) nanoislands exhibit a higher radiation hardness of the electroluminescence signal, which is attributed to spatial localization of charge carriers in the Ge/Si nanostructures. The spatial localization of charge carriers impedes their diffusion to radiation defects followed by nonradiative recombination at the defects. The results show the possibilities of using Ge/Si heterostructures with self-assembled nanoislands for the development of optoelectronic devices resistant to radiation.

  13. Synthesis of 4-substituted-trans-1, 2-diaminocyclohexyl polyaminocarboxylate metal chelating agents for the preparation of stable radiometal antibody immunoconjugates for therapy and spect and pet imaging

    DOE Patents [OSTI]

    Mease, Ronnie C. (Coram, NY); Mausner, Leonard F. (Stony Brook, NY); Srivastava, Suresh C. (Setauket, NY)

    1994-01-01T23:59:59.000Z

    Cyclo agents useful in forming antibody-metal conjugates useful for diagnostic and therapeutic purposes. New compounds and processes of forming these compounds are disclosed including 4-haloacetamido-trans-1,2-diaminocyclohexyl polyaminocarboxylate and 4-isothiocyanato-trans-1,2-diamino cyclohexane-N,N,N',N'-tetra acetic acid.

  14. Synthesis of 4-substituted-trans-1, 2-diaminocyclohexyl polyaminocarboxylate metal chelating agents for the preparation of stable radiometal antibody immunoconjugates for therapy and SPECT and PET imaging

    DOE Patents [OSTI]

    Mease, R.C.; Mausner, L.F.; Srivastava, S.C.

    1994-03-08T23:59:59.000Z

    Cyclo agents are described which are useful in forming antibody-metal conjugates which are used for diagnostic and therapeutic purposes. New compounds and processes of forming these compounds are disclosed including 4-haloacetamido-trans-1,2diaminocyclohexyl polyaminocarboxylate and 4-isothiocyanato-trans-1,2diamino cyclohexane-N,N,N',N'-tetra acetic acid. No Drawings

  15. Graphene formed on SiC under various environments: Comparison of Si-face and C-face

    E-Print Network [OSTI]

    Feenstra, Randall

    of the Si atoms thereby leaving behind excess C atoms which self- assemble into the graphene. Preparation1 Graphene formed on SiC under various environments: Comparison of Si-face and C-face N. Srivastava Abstract The morphology of graphene on SiC {0001} surfaces formed in various environments including ultra

  16. Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas

    E-Print Network [OSTI]

    Kushner, Mark

    Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas- sions (CD).3 An example of this process is fluorocarbon plasma etching of trenches and vias in SiO2 and stopping on a crystalline Si layer. The fluorocarbon radicals produced in the plasma deposit a polymer

  17. Quantum modeling of thermoelectric performance of strained Si/Ge/Si superlattices using the nonequilibrium Green's function method

    E-Print Network [OSTI]

    Walker, D. Greg

    Quantum modeling of thermoelectric performance of strained Si/Ge/Si superlattices using 2007 The cross-plane thermoelectric performance of strained Si/Ge/Si superlattices is studied from such that thermoelectric performance is independent of layer thickness between 2 and 4 nm germanium barrier layers

  18. Carrier mobilities and process stability of strained Si n-and p-MOSFETs on SiGe virtual substrates

    E-Print Network [OSTI]

    Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates. INTRODUCTION Since the advent of the relaxed graded buffer technique in 1991,1 SiGe alloys have been a proven path to increasing the functionality of the silicon microelectronics platform. SiGe virtual substrates

  19. High-germanium-content SiGe islands formed on compliant oxide by SiGe Haizhou Yina)

    E-Print Network [OSTI]

    High-germanium-content SiGe islands formed on compliant oxide by SiGe oxidation Haizhou Yina and the nonuniformity of the enhanced germanium content during the SiGe oxidation were improved by depositing a silicon was relaxed by lateral expansion of the SiGe islands, showing that dislocations were not required

  20. University of Massachusetts Lowell| iSiS Student Self Service My Advising Center iSiSMyAdvisingCenter

    E-Print Network [OSTI]

    Massachusetts at Lowell, University of

    University of Massachusetts Lowell| iSiS Student Self Service My Advising Center iSiSMyAdvisingCenter Student Self Service *New* iSiS My Advising Center The University of Massachusetts Lowell has made enhancements to iSiS Student Self Service. You will notice a new `My Advising

  1. Film Si Solar Cells with Nano Si: Cooperative Research and Development Final Report, CRADA Number CRD-09-00356

    SciTech Connect (OSTI)

    Wang, Q.

    2011-05-01T23:59:59.000Z

    Nevada Nanotechnology Center and Si group at NREL will work together to develop a-Si based solar cells with nano-Si technique. We will explore the existing a-Si based film solar cell technology at NREL and nano scale Si technology at Nevada Nanotechnology Center. By exchanging information, we will come; up with some new cell structures using nano-Si. We expect the new a-Si based cells will have optical enhancement or better electronic or optical properties of absorber layer to improve solar cell performance.

  2. Tailored Macroporous SiCN and SiC Structures for High-Temperature Fuel Reforming**

    E-Print Network [OSTI]

    Kenis, Paul J. A.

    Tailored Macroporous SiCN and SiC Structures for High-Temperature Fuel Reforming** By In-Kyung Sung such as the reforming of hydrocarbon fuels (e.g., die- sel or JP-8) into hydrogen for use in portable power sources the reaction rate of endothermic reactions (such as the steam reforming of hydrocarbons), at the macroscale

  3. Design, fabrication, and analysis of crystalline Si-SiGe heterostructure thin-film solar cells

    SciTech Connect (OSTI)

    Said, K.; Poortmans, J.; Caymax, M.; Nijs, J.; Debarge, L.; Christoffel, E.; Slaoui, A.

    1999-10-01T23:59:59.000Z

    One possible method to improve the efficiency of crystalline silicon (Ci) solar cells is by alloying with germanium (Ge). Although the improved absorption of the alloy leads to a gain in the current, the reduction of the alloy bandgap causes a loss in voltage, which overrides the increased current of the SiGe alloy solar cell. There has been a number of theoretical studies to circumvent this behavior. However, to date there has been no detailed study, which discusses the technological implementation of these concepts in solar cells. In this paper, the design issues of crystalline Si-SiGe heterostructure will be dealt with in an attempt to reduce the effect of the increased dark current of the alloyed cells, while at the same time sustaining the enhancement in the current. The enhanced back surface field at the back p{sup +}-Si/p-SiGe interface reduces the base component of the recombination current of the heterostructure cell if recombination caused by dislocations is neglected. A higher infrared (IR) response which results in a higher short-circuit current (2 mA/cm{sup 2} higher than a reference Si cell) has been recorded for the Si-Si{sub .9}Ge{sub .1}-thin-film structure of 15 {micro}m thickness. The reduction in dark saturation current, which has been predicted based on the theoretical calculations could not be realized in the heterostructure SiGe/Si cell due to the degradation effect of the misfit dislocations that decreases the bulk lifetime, and increases the interface recombination velocity. In a structure which contains a p{sup +}-SiGe buffer layer, and efficiency of 12.5% is achieved for a SiGe cell with 15 {micro}m thickness without texturing or optical confinement, which is about the same as the Si reference cell with equal active thickness, but with a higher short-circuit current. These results, for the first time, experimentally prove that alloying with Ge offers a higher current and might have a room for improving the efficiency of the multijunction solar cells or dual bandgap cells when SiGe is used to convert the IR-part of the spectrum.

  4. Carbon Clusters as Possible Defects in the SiC-SiO2 Interface

    SciTech Connect (OSTI)

    Dang, Hongli [ORNL; Ramkumar, Gudipati [unknown; Yang, Liu [unknown; Li, Ying [ORNL; Peterson, Heather [unknown; Chisholm, Matthew F [ORNL; Biggerstaff, Trinity Leigh [ORNL; Duscher, Gerd [University of Tennessee, Knoxville (UTK); Wang, Sanwu [ORNL

    2009-01-01T23:59:59.000Z

    High state densities in the band gap of the SiC-SiO2 interface significantly reduce the channel mobilities in SiC-based high-temperature/high-power microelectronics. Investigations of the nature of the interface defects are thus of great importance. While several possible defects including very small carbon clusters with up to four carbon atoms have been identified by first-principles theory, larger carbon clusters as possible defects have attracted less attention. Here, we report first-principles quantum-mechanical calculations for two larger carbon clusters, the C10 ring and the C20 fullerence, in the SiC-SiO2 interface. We find that both carbon clusters introduce significant states in the band gap. The states extend over the entire band gap with higher densities in the upper half of the gap, thus accounting for some of the interface trap densities observed experimentally

  5. Stepwise redefinition of the SI base units

    E-Print Network [OSTI]

    Issaev, L K; Khruschov, V V

    2012-01-01T23:59:59.000Z

    The four SI base units are proposed to be redefined in two stages: first, the kilogram, mole and ampere should be defined, and then the kelvin. To realize the redefinition of a base unit of the SI in terms of fundamental physical constant (FPC), a principle of coincidence of their physical dimensions is put forward. Direct applying this principle will lead to the changing of the sets of base and derived units in the new SI. If we want to preserve the continuity of the division between base and derived units in the new and the current SI, the principle is to be generalized with the time dimension factor be included. The status of the mole as the base unit of measurement is considered in the current and new SI. It is proposed to redefine the kilogram using a fixed value of the Avogadro constant and then to redefine the kelvin, after the measurement accuracy of the Boltzmann constant has been increased and agreed with the values of other constants of molecular physics.

  6. N-AND P-TYPE SiGe/Si SUPERLATTICE COOLERS Xiaofeng Fan, Gehong Zeng, Edward Croke

    E-Print Network [OSTI]

    N- AND P-TYPE SiGe/Si SUPERLATTICE COOLERS Xiaofeng Fan, Gehong Zeng, Edward Croke a) , Gerry, 95064 Phone: (805) 893-4235 Fax: (805) 893-7990 Email: fan@opto.ece.ucsb.edu ABSTRACT SiGe is a good of single-element SiGe/Si superlattice coolers of both n- and p-type devices are described for room

  7. Finite element simulation for ultraviolet excimer laser processing of patterned Si/SiGe/Si(100) heterostructures

    SciTech Connect (OSTI)

    Conde, J. C.; Chiussi, S.; Gontad, F.; Gonzalez, P. [Dpto. Fisica Aplicada, University of Vigo, E-36310 Vigo (Spain); Martin, E. [Dpto. Mecanica, Maquinas, Motores Termicos y Fluidos, University of Vigo, E-36310 Vigo (Spain); Serra, C. [CACTI, University of Vigo, E-36310 Vigo (Spain)

    2010-07-05T23:59:59.000Z

    Ultraviolet (UV) Excimer laser assisted processing is an alternative strategy for producing patterned silicon germanium heterostructures. We numerically analyzed the effects caused by pulsed 193 Excimer laser radiation impinging on patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bilayers deposited on a crystalline silicon substrate [Si(100)]. The proposed two dimensional axisymmetric numerical model allowed us to estimate the temperature and concentration gradients caused by the laser induced rapid melting and solidification processes. Energy density dependence of maximum melting depth and melting time evolution as well as three dimensional temperature and element distribution have been simulated and compared with experimentally obtained results.

  8. Abstract The Tat protein-export system serves to trans-locate folded proteins, often containing redox cofactors,

    E-Print Network [OSTI]

    Palmer, Tracy

    - location by the Sec system proceeds by a `threading' mechanism in which the essentially unfolded substrate-bound respiratory complexes by the Tat protein-transport system Received: 27 February 2002 / Revised: 16 April 2002Abstract The Tat protein-export system serves to trans- locate folded proteins, often containing

  9. IEEE TRANS. ON POWER SYSTEMS, VOL. XX, NO. X, DECEMBER XXXX 1 Tutorial on Stochastic Optimization in Energy I

    E-Print Network [OSTI]

    Powell, Warren B.

    IEEE TRANS. ON POWER SYSTEMS, VOL. XX, NO. X, DECEMBER XXXX 1 Tutorial on Stochastic Optimization of a two-part tutorial designed to clarify the modeling of sequential, stochastic optimization (control canonical model for sequential stochastic optimization (control) prob- lems. In our presentation, we

  10. Coherent phonons in Si/SiGe superlattices Y. Ezzahri,* S. Grauby, J. M. Rampnoux, H. Michel, G. Pernot, W. Claeys, and S. Dilhaire

    E-Print Network [OSTI]

    Coherent phonons in Si/SiGe superlattices Y. Ezzahri,* S. Grauby, J. M. Rampnoux, H. Michel, G longitudinal-acoustic-phonon Bragg reflection. All of these are investigated in Si/SiGe superlattices using

  11. Biotransformation of trans-1,1,1,3-tetrafluoropropene (HFO-1234ze)

    SciTech Connect (OSTI)

    Schuster, Paul [Institut fuer Toxikologie, Universitaet Wuerzburg, Versbacher Str. 9, 97078 Wuerzburg (Germany); Bertermann, Ruediger [Institut fuer Anorganische Chemie, Universitaet Wuerzburg, Am Hubland, 97074 Wuerzburg (Germany); Rusch, George M. [Honeywell, P.O. Box 1057, Morristown, NJ 07962-1057 (United States); Dekant, Wolfgang [Institut fuer Toxikologie, Universitaet Wuerzburg, Versbacher Str. 9, 97078 Wuerzburg (Germany)], E-mail: dekant@toxi.uni-wuerzburg.de

    2009-09-15T23:59:59.000Z

    trans-1,1,1,3-Tetrafluoropropene (HFO-1234ze) is a non-ozone-depleting fluorocarbon replacement with a low global warming potential and is developed as foam blowing agent. The biotransformation of HFO-1234ze was investigated after inhalation exposure. Male Sprague-Dawley rats were exposed to air containing 2000; 10,000; or 50,000 ppm (n = 5/concentration) HFO-1234ze. Male B6C3F1 mice were only exposed to 50,000 ppm HFO-1234ze. All inhalation exposures were conducted for 6 h in a dynamic exposure chamber. After the end of the exposures, animals were individually housed in metabolic cages and urines were collected at 6 or 12 h intervals for 48 h. For metabolite identification, urine samples were analyzed by {sup 1}H-coupled and {sup 1}H-decoupled {sup 19}F-NMR and by LC/MS-MS or GC/MS. Metabolites were identified by {sup 19}F-NMR chemical shifts, signal multiplicity, {sup 1}H-{sup 19}F coupling constants and by comparison with synthetic reference compounds. In urine samples of rats exposed to 50,000 ppm HFO-1234ze, the predominant metabolite was S-(3,3,3-trifluoro-trans-propenyl)-mercaptolactic acid and accounted for 66% of all integrated {sup 19}F-NMR signals in urines. No {sup 19}F-NMR signals were found in spectra of rat urine samples collected after inhalation exposure to 2000 or 10,000 ppm HFO-1234ze likely due to insufficient sensitivity. S-(3,3,3-Trifluoro-trans-propenyl)-L-cysteine, N-acetyl-S-(3,3,3-trifluoro-trans-propenyl)-L-cysteine and 3,3,3-trifluoropropionic acid were also present as metabolites in urine samples of rats and mice. A presumed amino acid conjugate of 3,3,3-trifluoropropionic acid was the major metabolite of HFO-1234ze in urine samples of mice exposed to 50,000 ppm and related to 18% of total integrated {sup 19}F-NMR signals. Quantification of three metabolites in urines of rats and mice was performed, using LC/MS-MS and GC/MS. The quantified amounts of the metabolites excreted with urine in both mice and rats, suggest only a low extent (< 1% of dose received) of biotransformation of HFO-1234ze and 95% of all metabolites were excreted within 18 h after the end of the exposures (t{sub 1/2} app. 6 h). The obtained results suggest that HFO-1234ze is likely subjected to an addition-elimination reaction with glutathione and to a CYP 450 mediated epoxidation at low rates.

  12. Ag on Si(111) from basic science to application

    SciTech Connect (OSTI)

    Belianinov, Aleksey

    2012-04-04T23:59:59.000Z

    In our work we revisit Ag and Au adsorbates on Si(111)-7x7, as well as experiment with a ternary system of Pentacene, Ag and Si(111). Of particular interest to us is the Si(111)-({radical}3x{radical}3)R30{degree}Ag (Ag-Si-{radical}3 hereafter). In this thesis I systematically e plore effects of Ag deposition on the Ag-Si-{radical}3 at different temperatures, film thicknesses and deposition fluxes. The generated insight of the Ag system on the Si(111) is then applied to generate novel methods of nanostructuring and nanowire growth. I then extend our expertise to the Au system on the Ag-Si(111) to gain insight into Au-Si eutectic silicide formation. Finally we explore behavior and growth modes of an organic molecule on the Ag-Si interface.

  13. Direct growth of graphene on Si(111)

    SciTech Connect (OSTI)

    Thanh Trung, Pham, E-mail: phamtha@fundp.ac.be; Joucken, Frdric; Colomer, Jean-Franois; Robert, Sporken [Research Center in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), 61 Rue de Bruxelles, 5000 Namur (Belgium); Campos-Delgado, Jessica; Raskin, Jean-Pierre [Electrical Engineering (ELEN), Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Universit catholique de Louvain UCL, 3 place du Levant, Louvain-la-Neuve (Belgium); Hackens, Benot; Santos, Cristiane N. [Nanoscopic physics (NAPS), Institute of Condensed Matter and Nanosciences (IMCN), Universit catholique de Louvain UCL, 2 chemin du Cyclotron, Louvain-la-Neuve (Belgium)

    2014-06-14T23:59:59.000Z

    Due to the need of integrated circuit in the current silicon technology, the formation of graphene on Si wafer is highly desirable, but is still a challenge for the scientific community. In this context, we report the direct growth of graphene on Si(111) wafer under appropriate conditions using an electron beam evaporator. The structural quality of the material is investigated in detail by reflection high energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, high resolution scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. Our experimental results confirm that the quality of graphene is strongly dependent on the growth time during carbon atoms deposition.

  14. Geochemical Evidence for Slab Melting in theTrans-MexicanVolcanic Belt

    E-Print Network [OSTI]

    Langmuir, Charles H.

    and heavy rare earth concentrations and Nb/Ta ratios with increasing SiO2 contents in theVBZ rocks is best OF EARTH AND PLANETARY SCIENCES, HARVARD UNIVERSITY, CAMBRIDGE, MA 02138, USA 3 LAMONT^DOHERTY EARTH OBSERVATORY AND DEPARTMENT OF EARTH AND ENVIRONMENTAL SCIENCES, COLUMBIA UNIVERSITY, 61 RT. 9W, PALISADES, NY

  15. Planetary and meteoritic Mg/Si and d30Si variations inherited from solar nebula chemistry

    E-Print Network [OSTI]

    Dauphas, Nicolas; Burkhardt, Christoph; Kobayashi, Hiroshi; Kurosawa, Kosuke

    2015-01-01T23:59:59.000Z

    The bulk chemical compositions of planets are uncertain, even for major elements such as Mg and Si. This is due to the fact that the samples available for study all originate from relatively shallow depths. Comparison of the stable isotope compositions of planets and meteorites can help overcome this limitation. Specifically, the non-chondritic Si isotope composition of the Earth's mantle was interpreted to reflect the presence of Si in the core, which can also explain its low density relative to pure Fe-Ni alloy. However, we have found that angrite meteorites display a heavy Si isotope composition similar to the lunar and terrestrial mantles. Because core formation in the angrite parent-body (APB) occurred under oxidizing conditions at relatively low pressure and temperature, significant incorporation of Si in the core is ruled out as an explanation for this heavy Si isotope signature. Instead, we show that equilibrium isotopic fractionation between gaseous SiO and solid forsterite at 1370 K in the solar neb...

  16. Si/SiGe Nanostructures Fabricated by Atomic Force Microscopy Oxidation Xiang-Zheng Bo, Leonid P. Rokhinson, Haizhou Yin, D. C. Tsui, and J. C. Sturm

    E-Print Network [OSTI]

    Rokhinson, Leonid

    Si/SiGe Nanostructures Fabricated by Atomic Force Microscopy Oxidation Xiang-Zheng Bo, Leonid P features in strained SiGe alloys. When directly oxidizing SiGe alloys, minimum line widths of 20nm were on SiGe alloys is slightly less than that on Si. Finally, this method was used to successfully cut

  17. Electrostatically defined quantum dots in a Si/SiGe heterostructure This article has been downloaded from IOPscience. Please scroll down to see the full text article.

    E-Print Network [OSTI]

    Ludwig-Maximilians-Universitt, Mnchen

    Electrostatically defined quantum dots in a Si/SiGe heterostructure This article has been of Physics Electrostatically defined quantum dots in a Si/SiGe heterostructure A Wild1 , J Sailer1 , J Ntzel epitaxially grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well

  18. arXiv:1007.2404v1[cond-mat.mes-hall]14Jul2010 Electrostatically defined Quantum Dots in a Si/SiGe

    E-Print Network [OSTI]

    Ludwig-Maximilians-Universitt, Mnchen

    arXiv:1007.2404v1[cond-mat.mes-hall]14Jul2010 Electrostatically defined Quantum Dots in a Si/SiGe (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge as a spin qubit. Our results promise the suitability of electrostatically defined QDs in Si/SiGe

  19. Challenges in epitaxial growth of SiGe buffers on Si (111), (110), and (112) Minjoo L. Lee a,b,*, Dimitri A. Antoniadis a

    E-Print Network [OSTI]

    Haller, Gary L.

    Challenges in epitaxial growth of SiGe buffers on Si (111), (110), and (112) Minjoo L. Lee a The growth of SiGe on surfaces other than Si(001) is of interest in VLSI technology both for realizing novel-mismatch SiGe films grown on Si(111), (110), and (112) possess threading dislocation densities (TDD) >10

  20. Development of Readout Interconnections for the Si-W Calorimeter of SiD

    SciTech Connect (OSTI)

    Woods, M.; Fields, R.G.; Holbrook, B.; Lander, R.L.; Moskaleva, A.; Neher, C.; Pasner, J.; Tripathi, M.; /UC, Davis; Brau, J.E.; Frey, R.E.; Strom, D.; /Oregon U.; Breidenbach, M.; Freytag, D.; Haller, G.; Herbst, R.; Nelson, T.; /SLAC; Schier, S.; Schumm, B.; /UC, Santa Cruz

    2012-09-14T23:59:59.000Z

    The SiD collaboration is developing a Si-W sampling electromagnetic calorimeter, with anticipated application for the International Linear Collider. Assembling the modules for such a detector will involve special bonding technologies for the interconnections, especially for attaching a silicon detector wafer to a flex cable readout bus. We review the interconnect technologies involved, including oxidation removal processes, pad surface preparation, solder ball selection and placement, and bond quality assurance. Our results show that solder ball bonding is a promising technique for the Si-W ECAL, and unresolved issues are being addressed.

  1. Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001)

    SciTech Connect (OSTI)

    Grydlik, Martyna; Groiss, Heiko; Brehm, Moritz; Schaeffler, Friedrich [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, A-4040 Linz (Austria); Boioli, Francesca; Montalenti, Francesco; Miglio, Leo [L-NESS and Department of Material Science, University of Milano-Bicocca (Italy); Gatti, Riccardo; Devincre, Benoit [LEM, CNRS/ONERA, Chatillon Cedex (France)

    2012-07-02T23:59:59.000Z

    We show that suitable pit-patterning of a Si(001) substrate can strongly influence the nucleation and the propagation of dislocations during epitaxial deposition of Si-rich Si{sub 1-x}Ge{sub x} alloys, preferentially gettering misfit segments along pit rows. In particular, for a 250 nm layer deposited by molecular beam epitaxy at x{sub Ge} = 15%, extended film regions appear free of dislocations, by atomic force microscopy, as confirmed by transmission electron microscopy sampling. This result is quite general, as explained by dislocation dynamics simulations, which reveal the key role of the inhomogeneous distribution in stress produced by the pit-patterning.

  2. Giant monopole resonance strength in Si-28

    E-Print Network [OSTI]

    Youngblood, David H.; Clark, HL; Lui, YW.

    1998-01-01T23:59:59.000Z

    The giant resonance region in Si-28 was studied with inelastic scattering of 240 MeV alpha particles at small angles including 0 degrees. The giant resonance peak extended from E-x=12 MeV to 35 MeV and E0 strength corresponding to 54 +/- 6...

  3. Si Einstein m'tait cont

    E-Print Network [OSTI]

    Damour, Thibault

    Si Einstein m'tait cont Regard sur la rela5vit et le temps Jeudi 31 janvier 2013 Gif-sur-YveBe Thibault Damour (IHS) #12; EINSTEIN, navigateur, ... EINSTEIN et la joie de la pense ce qui est essen0el

  4. Globalization and Human Cooperation Supporting Information (SI)

    E-Print Network [OSTI]

    Globalization and Human Cooperation Supporting Information (SI) Nancy R. Buchana Gianluca Grimaldab University, Houston, TX 77005, USA d Department of Psychology, Ohio State University, Columbus, OH 43210, USA e Laboratory for Research in Experimental Economics, University of Valencia, Valencia, Spain 46020 f

  5. On-Wafer Integration of Nitrides and Si Devices: Bringing the Power of Polarization to Si

    E-Print Network [OSTI]

    Chung, Jinwook

    The seamless integration of AlGaN/GaN transistors and Si CMOS electronics on the same chip will revolutionize digital and mixed signal electronics. In this talk we describe our group's effort on demonstrating this integration. ...

  6. Electrostatically defined Quantum Dots in a Si/SiGe Heterostructure

    E-Print Network [OSTI]

    A. Wild; J. Sailer; J. Ntzel; G. Abstreiter; S. Ludwig; D. Bougeard

    2010-07-14T23:59:59.000Z

    We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are demonstrated. We discuss technological challenges specific for silicon-based heterostructures and the effect of a comparably large effective electron mass on transport properties and tunability of the double QD. Charge noise, which might be intrinsically induced due to strain-engineering is proven not to affect the stable operation of our device as a spin qubit. Our results promise the suitability of electrostatically defined QDs in Si/SiGe heterostructures for quantum information processing.

  7. Electrostatically defined Quantum Dots in a Si/SiGe Heterostructure

    E-Print Network [OSTI]

    Wild, A; Ntzel, J; Abstreiter, G; Ludwig, S; Bougeard, D

    2010-01-01T23:59:59.000Z

    We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are demonstrated. We discuss technological challenges specific for silicon-based heterostructures and the effect of a comparably large effective electron mass on transport properties and tunability of the double QD. Charge noise, which might be intrinsically induced due to strain-engineering is proven not to affect the stable operation of our device as a spin qubit. Our results promise the suitability of electrostatically defined QDs in Si/SiGe heterostructures for quantum information processing.

  8. Ge-on-Si laser operating at room temperature

    E-Print Network [OSTI]

    Liu, Jifeng

    Monolithic lasers on Si are ideal for high-volume and large-scale electronicphotonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide ...

  9. acopladas entre si: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and analysis of lateral SiC N-emitter SiGe P-base Schottky metal-collector (NPM) HBT on SOI Engineering Websites Summary: on SOI M. Jagadesh Kumar *, C. Linga Reddy...

  10. asociat si rezultatele: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and analysis of lateral SiC N-emitter SiGe P-base Schottky metal-collector (NPM) HBT on SOI Engineering Websites Summary: on SOI M. Jagadesh Kumar *, C. Linga Reddy...

  11. ambiant si impactul: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and analysis of lateral SiC N-emitter SiGe P-base Schottky metal-collector (NPM) HBT on SOI Engineering Websites Summary: on SOI M. Jagadesh Kumar *, C. Linga Reddy...

  12. al si application: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    that could boost Si-based wireless technology 99 High Performance Polycrystalline SiGe Thin Film Transistors Using Al2O3 Gate Insulator Materials Science Websites Summary:...

  13. Electronic structure of Fe{sub 3}Si on Si(100) substrates

    SciTech Connect (OSTI)

    Lal, Chhagan, E-mail: clsaini52@gmail.com [Centre for Non-Conventional Energy Resources, 14-Vigyan Bhavan, University of Rajasthan, Jaipur-302004 (India); Synchrotron S.C.p.A., SS-14 km, 163.5, in Area Science Park, 34149, Basovizza, Trieste (Italy); International Centre for Theoretical Physics (Italy); Di Santo, G.; Caputo, M.; Panighel, M.; Goldoni, A. [Synchrotron S.C.p.A., SS-14 km, 163.5, in Area Science Park, 34149, Basovizza, Trieste (Italy); Taleatu, B. A. [Department of Physics, Obafemi Awolowo University Ile-Ife (Nigeria); Jain, I. P. [Centre for Non-Conventional Energy Resources, 14-Vigyan Bhavan, University of Rajasthan, Jaipur-302004 (India)

    2014-04-24T23:59:59.000Z

    The improved performance of large-scale integrated circuits (LSIs) by the shrinking of devices is becoming difficult due to physical limitations. Here we report, the growth and formation of Fe{sub 3}Si on Si(100) and characterized by x-ray photoemission, UV photoemission and low energy electron diffraction to study the electronic structure. The results revealed that the DO{sub 3} phase formation is exist and photoemission results also support the electron diffraction outcome.

  14. SiGe quantum dot molecules grown on patterned Si (001) substrates

    SciTech Connect (OSTI)

    Yang Hongbin; Zhang Xiangjiu; Jiang Zuiming; Yang Xinju; Fan Yongliang [Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433 (China)

    2008-08-15T23:59:59.000Z

    SiGe quantum dot molecules (QDMs) grown on patterned Si (001) substrates by molecular beam epitaxy were studied. Experimental results showed that the density, the dimension, and the dimension distribution of the SiGe QDMs grown in the windows were dependent on the window size. When the thickness of the Si{sub 0.8}Ge{sub 0.2} film was 40 nm, QDMs only appeared in the unpatterned areas of the Si substrate and none could be found inside the windows of 6x6 {mu}m{sup 2} on the same substrate. However, when the thickness of Si{sub 0.8}Ge{sub 0.2} film was increased to 80 nm, QDMs appeared both inside the windows and in the unpatterned areas, and the density of QDMs was reduced with the decrease in the window size. We attribute these results to the different strain relaxations in different size windows, which are caused by the edge effect of the epitaxial film in the window. Based on these experimental results we discuss the formation and the size stability of the QDMs and conclude that the formation of the SiGe QDM originates from an intrinsic cause of the strain relief mechanism. This work also shows that by means of the edge induced strain relaxation of the epitaxial film in the window, it is possible to reveal the influence of the strain on some physical properties of the SiGe film without changing its Ge atomic fraction.

  15. Fiber/Matrix Interfacial Thermal Conductance Effect on the Thermal Conductivity of SiC/SiC Composites

    SciTech Connect (OSTI)

    Nguyen, Ba Nghiep; Henager, Charles H.

    2013-04-20T23:59:59.000Z

    SiC/SiC composites used in fusion reactor applications are subjected to high heat fluxes and require knowledge and tailoring of their in-service thermal conductivity. Accurately predicting the thermal conductivity of SiC/SiC composites as a function of temperature will guide the design of these materials for their intended use, which will eventually include the effects of 14-MeV neutron irradiations. This paper applies an Eshelby-Mori-Tanaka approach (EMTA) to compute the thermal conductivity of unirradiated SiC/SiC composites. The homogenization procedure includes three steps. In the first step EMTA computes the homogenized thermal conductivity of the unidirectional (UD) SiC fiber embraced by its coating layer. The second step computes the thermal conductivity of the UD composite formed by the equivalent SiC fibers embedded in a SiC matrix, and finally the thermal conductivity of the as-formed SiC/SiC composite is obtained by averaging the solution for the UD composite over all possible fiber orientations using the second-order fiber orientation tensor. The EMTA predictions for the transverse thermal conductivity of several types of SiC/SiC composites with different fiber types and interfaces are compared to the predicted and experimental results by Youngblood et al.

  16. Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties

    SciTech Connect (OSTI)

    Gatti, E., E-mail: eleonora.gatti@mater.unimib.it; Pezzoli, F.; Grilli, E. [L-NESS and Dipartimento di Scienza dei Materiali, Universit di Milano Bicocca, via Cozzi 55, I-20125 Milano (Italy); Isa, F.; Chrastina, D.; Isella, G. [L-NESS and Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, I - 22100 Como (Italy); Mller Gubler, E. [Electron Microscopy Center of ETH Zrich (EMEZ), August-Piccard-Hof 1, CH-8093 Zrich (Switzerland)

    2014-07-28T23:59:59.000Z

    The epitaxial growth of Ge/Si{sub 0.15}Ge{sub 0.85} multiple quantum wells (MQWs) on Si(111) substrates is demonstrated. A 3??m thick reverse, double-step virtual substrate with a final composition of Si{sub 0.10}Ge{sub 0.90} has been employed. High resolution XRD, TEM, AFM and defect etching analysis has been used for the study of the structural properties of the buffer and of the QWs. The QW stack is characterized by a threading dislocation density of about 3??10{sup 7?}cm{sup ?2} and an interdiffusion layer at the well/barrier interface of 2.1?nm. The quantum confined energy levels of this system have been calculated using the kp and effective mass approximation methods. The Ge/Si{sub 0.15}Ge{sub 0.85} MQWs have been characterized through absorption and photoluminescence measurements. The optical spectra have been compared with those of Ge/Si{sub 0.15}Ge{sub 0.85} QWs grown on Si(001) through a thick graded virtual substrate.

  17. Plasma hydrogenation of strain-relaxed SiGe/Si heterostructure for layer transfer

    SciTech Connect (OSTI)

    Chen Peng; Chu, Paul K.; Hoechbauer, T.; Nastasi, M.; Buca, D.; Mantl, S.; Theodore, N. David; Alford, T.L.; Mayer, J.W.; Loo, R.; Caymax, M.; Cai, M.; Lau, S.S. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Los Alamos National Laboratory, Los Alamos, New Mexico, 87545 (United States); Institut fuer Schichten und Grenzflaechen and cni-Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Juelich, D-52425 Juelich (Germany); Advanced Products Research and Development Laboratory, Freescale Semiconductor Incorporated, 2100 East Elliot Road, Tempe, Arizona 85284 (United States); Department of Chemical and Materials Engineering, Arizona State University, Tempe, Arizona 85287 (United States); IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); University of California at San Diego, San Diego, California 92093 (United States)

    2004-11-22T23:59:59.000Z

    The use of plasma hydrogenation for relaxed SiGe layer transfer is demonstrated. It is found that the interface of a strain-relaxed SiGe/Si heterostructure is effective in trapping H during plasma hydrogenation. Long microcracks observed at the interface due to the trapping of indiffused H indicate the distinct possibility of transferring the overlayer using the ion-cutting technique. Our results suggest that interfacial defects induced by the He implantation relaxation process trap the indiffusing H atoms and lead to interfacial cracks during hydrogenation or upon postannealing at higher temperatures. It is further noted that trapping of H at the interface is possible only in strain-relaxed structures. Without strain relaxation, H atoms introduced by plasma hydrogenation get trapped just below the sample surface and form a band of shallow platelets. Without the need for high-dose high-energy ion implantation, our results suggest an effective way for high-quality strain-relaxed SiGe layer transfer. The technique has potential for application in the fabrication of SiGe-on-insulator strained Si epitaxial layer and related structures.

  18. Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*

    E-Print Network [OSTI]

    Bowers, John

    Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga* , Mike Morsea , Mario J. Panicciaa , Moshe, Charlottesville, VA 22904, USA Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes. Research on the Ge/Si photodiodes, one of the fundamental components needed for building integrated silicon

  19. Magnetic Properties of Single-Crystalline CoSi Nanowires

    E-Print Network [OSTI]

    Kim, Bongsoo

    Si nanowires with B20 crystal structure are synthesized by a vapor-transport-based method. The reaction-cooled (ZFC-FC) measurements from the nanowire ensemble show freezing of the disordered surface spins at low and electrical transport properties.1 While MnSi shows low- temperature helimagnetic order,2 FeSi is a small

  20. SiGe thin-film structures for solar cells

    SciTech Connect (OSTI)

    Bremond, G.; Daami, A.; Laugier, A. [Inst. National des Sciences Appliquees de Lyon, Villeurbanne (France). Lab. de Physique de la Matiere] [and others

    1998-12-31T23:59:59.000Z

    In order to study their applicability as the active base material in Si thin crystalline film solar cell technology, SiGe relaxed layers grown by Liquid Phase Epitaxy (LPE) and Chemical Vapor Deposition (CVD) on Si substrates are investigated by optical and electrical measurements (TEM, EXD, PL, EBIC). The main results of this work is to point out the improvement of the SiGe active base layer by using smooth Ge graded SiGe buffer layer and remote plasma hydrogenation. TEM, EXD, PL experiments show the effect of the Ge graded buffer layer grown using LPE, by confining the threading dislocations in the SiGe buffer layer close to the Si/SiGe interface. EBIC measurements reveal low recombination activity of dislocations at 300 K providing the diffusion length exceeds the 15 {micro}m layer thickness. The enhanced luminescence of SiGe near bandgap indicates that remote plasma hydrogenation induces a decrease of the non-radiative recombination pathways due to dislocations on CVD layers where defect recombinations dominate as indicated by EBIC measurements. This study points out the importance of controlling relaxed SiGe layers with good minority carrier recombination quality as a key issue for the optimization of new SiGe/Si based solar cells.

  1. Characterization of SiO{sub 2}/SiN{sub x} gate insulators for graphene based nanoelectromechanical systems

    SciTech Connect (OSTI)

    Tvri, E.; Csontos, M., E-mail: csontos@dept.phy.bme.hu; Krivchy, T.; Csonka, S. [Department of Physics, Budapest University of Technology and Economics and Condensed Matter Research Group of the Hungarian Academy of Sciences, Budafoki t 8, H-1111 Budapest (Hungary); Frjes, P. [MEMS Lab, Institute for Technical Physics and Materials Science, RCNS, HAS, Konkoly-Thege t 29-33, H-1121 Budapest (Hungary)

    2014-09-22T23:59:59.000Z

    The structural and magnetotransport characterization of graphene nanodevices exfoliated onto Si/SiO{sub 2}/SiN{sub x} heterostructures are presented. Improved visibility of the deposited flakes is achieved by optimal tuning of the dielectric film thicknesses. The conductance of single layer graphene Hall-bar nanostructures utilizing SiO{sub 2}/SiN{sub x} gate dielectrics were characterized in the quantum Hall regime. Our results highlight that, while exhibiting better mechanical and chemical stability, the effect of non-stoichiometric SiN{sub x} on the charge carrier mobility of graphene is comparable to that of SiO{sub 2}, demonstrating the merits of SiN{sub x} as an ideal material platform for graphene based nanoelectromechanical applications.

  2. FRET-Labeled siRNA Probes for Tracking Assembly and Disassembly of siRNA-Nanocomplexes

    E-Print Network [OSTI]

    Alabi, Christopher Akinleye

    The assembly, stability, and timely disassembly of short interfering RNA (siRNA) nanocomplexes have the potential to affect the efficiency of siRNA delivery and gene silencing. As such, the design of new probes that can ...

  3. Method for enhancing growth of SiO.sub.2 in Si by the implantation of germanium

    DOE Patents [OSTI]

    Holland, Orin W. (Oak Ridge, TN); Fathy, Dariush (Knoxville, TN); White, Clark W. (Oak Ridge, TN)

    1990-04-24T23:59:59.000Z

    A method for enhancing the conversion of Si to SiO.sub.2 in a directional fashion wherein steam or wet oxidation of Si is enhanced by the prior implantation of Ge into the Si. The unique advantages of the Ge impurity include the directional enhancement of oxidation and the reduction in thermal budget, while at the same time, Ge is an electrically inactive impurity.

  4. Absence of quantum confinement effects in the photoluminescence of Si{sub 3}N{sub 4}embedded Si nanocrystals

    SciTech Connect (OSTI)

    Hiller, D., E-mail: daniel.hiller@imtek.uni-freiburg.de; Zelenina, A.; Gutsch, S.; Zacharias, M. [Faculty of Engineering, IMTEK, Albert-Ludwigs-University Freiburg, Georges-Khler-Allee 103, 79110 Freiburg (Germany); Dyakov, S. A. [Department of Electronic and Electrical Engineering, Trinity College Dublin, Dublin 2 (Ireland); Optics and Photonics, School of Information and Communication Technology, Royal Institute of Technology (KTH), Electrum 229, Kista SE-16440 (Sweden); Lpez-Conesa, L.; Lpez-Vidrier, J.; Peir, F.; Garrido, B. [MIND-IN2UB, Departament d'Electrnica, Universitat de Barcelona, C. Mart i Franqus, 1, 08028 Barcelona (Spain); Estrad, S. [MIND-IN2UB, Departament d'Electrnica, Universitat de Barcelona, C. Mart i Franqus, 1, 08028 Barcelona (Spain); CCiT, Scientific and Technical Centers, Universitat de Barcelona, C/Llus Sol i Sabaris 1, 08028 Barcelona (Spain); Valenta, J.; Ko?nek, M.; Trojnek, F.; Mal, P. [Faculty of Mathematics and Physics, Department of Chemical Physics and Optics, Charles University in Prague, Ke Karlovu 3, CZ-12116 Prague 2 (Czech Republic); Schnabel, M.; Weiss, C.; Janz, S. [Fraunhofer-Institut fr Solare Energiesysteme ISE, Heidenhofstr. 2, 79110 Freiburg (Germany)

    2014-05-28T23:59:59.000Z

    Superlattices of Si-rich silicon nitride and Si{sub 3}N{sub 4} are prepared by plasma-enhanced chemical vapor deposition and, subsequently, annealed at 1150?C to form size-controlled Si nanocrystals (Si NCs) embedded in amorphous Si{sub 3}N{sub 4}. Despite well defined structural properties, photoluminescence spectroscopy (PL) reveals inconsistencies with the typically applied model of quantum confined excitons in nitride-embedded Si NCs. Time-resolved PL measurements demonstrate 10{sup 5} times faster time-constants than typical for the indirect band structure of Si NCs. Furthermore, a pure Si{sub 3}N{sub 4} reference sample exhibits a similar PL peak as the Si NC samples. The origin of this luminescence is discussed in detail on the basis of radiative defects and Si{sub 3}N{sub 4} band tail states in combination with optical absorption measurements. The apparent absence of PL from the Si NCs is explained conclusively using electron spin resonance data from the Si/Si{sub 3}N{sub 4} interface defect literature. In addition, the role of Si{sub 3}N{sub 4} valence band tail states as potential hole traps is discussed. Most strikingly, the PL peak blueshift with decreasing NC size, which is often observed in literature and typically attributed to quantum confinement (QC), is identified as optical artifact by transfer matrix method simulations of the PL spectra. Finally, criteria for a critical examination of a potential QC-related origin of the PL from Si{sub 3}N{sub 4}-embedded Si NCs are suggested.

  5. Carbon incorporation for strain compensation during solid phase epitaxial recrystallization of SiGe on Si at 500600 C

    E-Print Network [OSTI]

    Florida, University of

    Carbon incorporation for strain compensation during solid phase epitaxial recrystallization of SiGe in the MBE grown SiGe layers prior to regrowth at moderate temperatures 500700 C has three main effects10 and photodetectors.11,12 The addition of germa- nium to silicon allows the resulting SiGe layer to have a reduced

  6. TransCom model simulations of CH? and related species: linking transport, surface flux and chemical loss with CH? variability in the troposphere and lower stratosphere

    E-Print Network [OSTI]

    Patra, P. K.

    A chemistry-transport model (CTM) intercomparison experiment (TransCom-CH?) has been designed to investigate the roles of surface emissions, transport and chemical loss in simulating the global methane distribution. Model ...

  7. Si{sup +} ion implantation for strain relaxation of pseudomorphic Si{sub 1-x}Ge{sub x}/Si(100) heterostructures

    SciTech Connect (OSTI)

    Buca, D.; Minamisawa, R. A.; Trinkaus, H.; Hollaender, B.; Mantl, S. [Institute of Bio- and Nanosystems (IBN1-IT), Forschungszentrum Juelich, D-52425 Juelich, Germany and JARA-Fundamentals of Future Information Technology (Germany); Loo, R.; Caymax, M. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)

    2009-06-01T23:59:59.000Z

    A mechanism of strain relief of pseudomorphic Si{sub 1-x}Ge{sub x}/Si(100) heterostructures by Si{sup +} ion implantation and annealing is proposed and analytically modeled. The degree of strain relaxation is presented as a function of Ge content and implantation and annealing parameters. Rutherford backscattering spectrometry/channeling, Raman spectroscopy, and transmission electron microscopy are employed to quantify the efficiency of the relaxation process and to examine the quality of the samples, respectively. The mechanism and the conditions for strain relaxation are discussed in terms of dislocation loop formation in the implanted range with emphasis on loop formation in the compressively strained SiGe layer. The detrimental effect of local amorphization of the SiGe layer on its relaxation and on strain transfer to the Si-cap layer is also addressed.

  8. Magnetoresistivity and acoustoelectronic effects in a tilted magnetic field in p-Si/SiGe/Si structures with an anisotropic g factor

    SciTech Connect (OSTI)

    Drichko, I. L., E-mail: Irina.L.Drichko@mail.ioffe.ru; Smirnov, I. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Suslov, A. V. [National High Magnetic Field Laboratory (United States); Mironov, O. A. [University of Warwick Science Park, Warwick SEMINANO R and D Centre (United Kingdom); Leadley, D. R. [University of Warwick Science Park, Department of Physics (United Kingdom)

    2010-09-15T23:59:59.000Z

    Magnetoresistivity {rho}{sub xx} and {rho}{sub xy} and the acoustoelectronic effects are measured in p-Si/SiGe/Si with an impurity concentration p = 1.99 x 10{sup 11} cm{sup -2} in the temperature range 0.3-2.0 K and an tilted magnetic field up to 18 T. The dependence of the effective g factor on the angle of magnetic field tilt {theta} to the normal to the plane of a two-dimensional p-Si/SiGe/Si channel is determined. A first-order ferromagnet-paramagnet phase transition is observed in the magnetic fields corresponding to a filling factor {nu} = 2 at {theta} {approx} 59{sup o}-60{sup o}.

  9. Si-based RF MEMS components.

    SciTech Connect (OSTI)

    Stevens, James E.; Nordquist, Christopher Daniel; Baker, Michael Sean; Fleming, James Grant; Stewart, Harold D.; Dyck, Christopher William

    2005-01-01T23:59:59.000Z

    Radio frequency microelectromechanical systems (RF MEMS) are an enabling technology for next-generation communications and radar systems in both military and commercial sectors. RF MEMS-based reconfigurable circuits outperform solid-state circuits in terms of insertion loss, linearity, and static power consumption and are advantageous in applications where high signal power and nanosecond switching speeds are not required. We have demonstrated a number of RF MEMS switches on high-resistivity silicon (high-R Si) that were fabricated by leveraging the volume manufacturing processes available in the Microelectronics Development Laboratory (MDL), a Class-1, radiation-hardened CMOS manufacturing facility. We describe novel tungsten and aluminum-based processes, and present results of switches developed in each of these processes. Series and shunt ohmic switches and shunt capacitive switches were successfully demonstrated. The implications of fabricating on high-R Si and suggested future directions for developing low-loss RF MEMS-based circuits are also discussed.

  10. Positron annihilation studies of fluorine-vacancy complexes in Si and SiGe

    SciTech Connect (OSTI)

    Edwardson, C. J.; Coleman, P. G. [Department of Physics, University of Bath, Bath BA2 7AY (United Kingdom); El Mubarek, H. A. W.; Gandy, A. S. [School of Electrical and Electronic Engineering, University of Manchester, Manchester, M13 9PL (United Kingdom)

    2012-04-01T23:59:59.000Z

    The formation of fluorine-vacancy (FV) complexes in strained Si-SiGe-Si multilayer structures and relaxed SiGe layers of varying Ge content has been investigated using variable-energy positron annihilation spectroscopy, including Doppler-broadened spectra ratio curves. It has been found that in all sample types there are two distinct regions defined only by the damage created by the implanted F ions. The first, shallower region (from the surface to a depth of {approx}200 nm) was found to contain a mixture of undecorated vacancies and FV complexes; there is no correlation between the vacancy or F concentration in this region and the Ge content. The multi-layer samples may also have O contamination that is not present in the relaxed samples. The second region (at depths {approx}200-440 nm) contains primarily FV complexes in all samples. In the multi-layer samples secondary ion mass spectrometry (SIMS) results show peaks of F accumulating in, or at the interfaces of, each SiGe multi-layer; the FV complexes, however, are distributed over depths similar to those in the relaxed samples, with some localization at the SiGe layer located within the second region. The positron response is primarily to FV complexes formed by the F implant in all samples. The F: FV ratios are approximately 3-7: 1 in the relaxed samples. Positrons appear to be relatively insensitive to the largest of the F SIMS peaks which lies beyond the second region. This is probably because the F has filled all the open volume at the SiGe layer, leaving no positron trapping sites.

  11. Thermodynamic and kinetic control of the lateral Si wire growth

    SciTech Connect (OSTI)

    Dedyulin, Sergey N., E-mail: sdedyuli@uwo.ca; Goncharova, Lyudmila V. [Department of Physics and Astronomy, The University of Western Ontario, 1151 Richmond St., London, Ontario N6A 3K7 (Canada)

    2014-03-24T23:59:59.000Z

    Reproducible lateral Si wire growth has been realized on the Si (100) surface. In this paper, we present experimental evidence showing the unique role that carbon plays in initiating lateral growth of Si wires on a Si (100) substrate. Once initiated in the presence of ?5 ML of C, lateral growth can be achieved in the range of temperatures, T?=?450650?C, and further controlled by the interplay of the flux of incoming Si atoms with the size and areal density of Au droplets. Critical thermodynamic and kinetic aspects of the growth are discussed in detail.

  12. The dynamical evolution of dwarf planet (136108) Haumea's collisional family: General properties and implications for the trans-Neptunian belt

    E-Print Network [OSTI]

    Lykawka, Patryk Sofia; Mukai, Tadashi; Nakamura, Akiko M

    2011-01-01T23:59:59.000Z

    Recently, the first collisional family was identified in the trans-Neptunian belt. The family consists of Haumea and at least ten other ~100km-sized trans-Neptunian objects (TNOs) located in the region a = 42 - 44.5 AU. In this work, we model the long-term orbital evolution of an ensemble of fragments representing hypothetical post-collision distributions at the time of the family's birth. We consider three distinct scenarios, in which the kinetic energy of dispersed particles were varied such that their mean ejection velocities (veje) were of order 200 m/s, 300 m/s and 400 m/s, respectively. Each simulation considered resulted in collisional families that reproduced that currently observed. The results suggest that 60-75% of the fragments created in the collision will remain in the trans-Neptunian belt, even after 4 Gyr of dynamical evolution. The surviving particles were typically concentrated in wide regions of orbital element space centred on the initial impact location, with their orbits spread across a ...

  13. Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures

    SciTech Connect (OSTI)

    Yablonskiy, A. N., E-mail: yablonsk@ipm.sci-nnov.ru; Baidakova, N. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Novikov, A. V. [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation)] [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation); Lobanov, D. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2013-11-15T23:59:59.000Z

    The results of a study of the spectral and temporal characteristics of the photoluminescence (PL) from multilayer structures with self-assembled Ge(Si) islands grown on silicon and 'silicon-on-insulator' substrates in relation to temperature and the excitation-light wavelength are presented. A substantial increase in island-related PL intensity is observed for structures with Ge(Si) islands grown on silicon substrates upon an increase in temperature from 4 to 70 K. This increase is due to the diffusion of nonequilibrium carriers from the silicon substrate into the active layer with the islands. In this case, a slow component with a characteristic time of {approx}100 ns appears in the PL rise kinetics. At the same time, no slow component in the PL rise kinetics and no rise in the PL intensity with increasing temperature are observed for structures grown on 'silicon-on-insulator' substrates, in which the active layer with the islands is insulated from the silicon substrate. It is found that absorption of the excitation light in the islands and SiGe wetting layers mainly contributes to the excitation of the PL signal from the islands under sub-bandgap optical pump conditions.

  14. Evaluate Si Layers: Cooperative Research and Development Final Report, CRADA Number CRD-07-255

    SciTech Connect (OSTI)

    Teplin, C.

    2013-04-01T23:59:59.000Z

    Evaluate Si layers based on heteroepitaxial Si growth on RABITS textured metal substrates coated with textured buffer layers.

  15. Prediction of Thermal Conductivity for Irradiated SiC/SiC Composites by Informing Continuum Models with Molecular Dynamics Data

    SciTech Connect (OSTI)

    Nguyen, Ba Nghiep; Gao, Fei; Henager, Charles H.; Kurtz, Richard J.

    2014-05-01T23:59:59.000Z

    This article proposes a new method to estimate the thermal conductivity of SiC/SiC composites subjected to neutron irradiation. The modeling method bridges different scales from the atomic scale to the scale of a 2D SiC/SiC composite. First, it studies the irradiation-induced point defects in perfect crystalline SiC using molecular dynamics (MD) simulations to compute the defect thermal resistance as a function of vacancy concentration and irradiation dose. The concept of defect thermal resistance is explored explicitly in the MD data using vacancy concentrations and thermal conductivity decrements due to phonon scattering. Point defect-induced swelling for chemical vapor deposited (CVD) SiC as a function of irradiation dose is approximated by scaling the corresponding MD results for perfect crystal ?-SiC to experimental data for CVD-SiC at various temperatures. The computed thermal defect resistance, thermal conductivity as a function of grain size, and definition of defect thermal resistance are used to compute the thermal conductivities of CVD-SiC, isothermal chemical vapor infiltrated (ICVI) SiC and nearly-stoichiometric SiC fibers. The computed fiber and ICVI-SiC matrix thermal conductivities are then used as input for an Eshelby-Mori-Tanaka approach to compute the thermal conductivities of 2D SiC/SiC composites subjected to neutron irradiation within the same irradiation doses. Predicted thermal conductivities for an irradiated Tyranno-SA/ICVI-SiC composite are found to be comparable to available experimental data for a similar composite ICVI-processed with these fibers.

  16. Selective, deep Si trench etching with dimensional control

    SciTech Connect (OSTI)

    Shul, R.J.; Willison, C.G.; Zhang, L.

    1998-08-01T23:59:59.000Z

    The recent development of a high-aspect ratio Si etch (HARSE) process has enabled the fabrication of a variety of Si structures where deep trench etching is necessary. The HARSE process relies on the formation of a sidewall etch inhibitor to prevent lateral etching of the Si structures during exposure to an aggressive SF{sub 6}/Ar plasma etch chemistry. The process yields highly anisotropic profiles with excellent dimensional control for high aspect ratio features. In this study, Si etch rates and etch selectivities to photoresist are reported as a function of chamber pressure, cathode rf-power, ICP source power, and gas flow. Si etch rates > 3 {micro}m/min with etch selectivities to resist > 75:1 were obtained. Lateral dimensional control, etch selectivities to SiO{sub 2} and Si{sub 3}N{sub 4}, and aspect ratio dependent etching (ARDE) will also be discussed.

  17. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-03-11T23:59:59.000Z

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmoredilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.less

  18. MODEL-BASED FEEDBACK CONTROL FOR AN AUTOMATED TRANSFER OUT OF SI OPERATION DURING SI TO HCCI TRANSITIONS IN GASOLINE ENGINES

    E-Print Network [OSTI]

    Stefanopoulou, Anna

    MODEL-BASED FEEDBACK CONTROL FOR AN AUTOMATED TRANSFER OUT OF SI OPERATION DURING SI TO HCCI for the transition between spark ignition (SI) and homo- geneous charge compression ignition (HCCI) combustion modes by approaching the transfer out of SI operation during the SI into HCCI transition in a closed-loop control

  19. Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces Luxmi, N. Srivastava, Guowei He, and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces Luxmi, N. Srivastava of graphene formed on the ( 1000 ) surface (the C-face) and the (0001) surface (the Si-face) of Si) and low-energy electron microscopy (LEEM). The graphene forms due to preferential sublimation of Si from

  20. High Cooling Power Density of SiGe/Si Superlattice Microcoolers Gehong Zeng, Xiaofeng Fan, Chris LaBounty, John E. Bowers, Edward Croke1

    E-Print Network [OSTI]

    High Cooling Power Density of SiGe/Si Superlattice Microcoolers Gehong Zeng, Xiaofeng Fan, Chris La, University of California, Santa Cruz, CA 95064 ABSTRACT Fabrication and characterization of SiGe for their potential monolithic integration with Si microelectronics. SiGe is a good thermoelectric material especially

  1. Nanopatterning of Si/SiGe Two-dimensional Hole Gases by PFOTS-aided AFM Lithography of Carrier Supply Layer

    E-Print Network [OSTI]

    Nanopatterning of Si/SiGe Two-dimensional Hole Gases by PFOTS-aided AFM Lithography of Carrier The nanopatterning of Si/SiGe layers by PFOTS (perfluorooctyl trichlorosilane) -aided AFM (atomic force microscopy and then transfer patterns in to underlying SiGe layers by a two-step selective wet etching. Minimum linewidths

  2. III International Conference on SiGe(C) Epitaxy and Heterostructures, NM, Mar. 2003 SiGe Single-Hole Transistor Fabricated by AFM Oxidation and Epitaxial Regrowth

    E-Print Network [OSTI]

    III International Conference on SiGe(C) Epitaxy and Heterostructures, NM, Mar. 2003 110 SiGe Single, West Lafayette, IN 47907, U.S.A. Nanodevices on Si/SiGe heterostructures are of growing interest [1 the performance of the devices. In this paper, we demonstrate a reproducible single-hole transistor SiGe device

  3. Phase separation in SiGe nanocrystals embedded in SiO{sub 2} matrix during high temperature annealing

    SciTech Connect (OSTI)

    Mogaddam, N. A. P.; Turan, R. [Department of Physics, Middle East Technical University, 06531 Ankara (Turkey); Alagoz, A. S. [Department of Physics, Middle East Technical University, 06531 Ankara (Turkey); Department of Applied Science, University of Arkansas at Little Rock, Little Rock, Arkansas 72204 (United States); Yerci, S. [Department of Physics, Middle East Technical University, 06531 Ankara (Turkey); Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215 (United States); Foss, S.; Finstad, T. G. [Department of Physics, University of Oslo, Oslo 0316 (Norway)

    2008-12-15T23:59:59.000Z

    SiGe nanocrystals have been formed in SiO{sub 2} matrix by cosputtering Si, Ge, and SiO{sub 2} independently on Si substrate. Effects of the annealing time and temperature on structural and compositional properties are studied by transmission electron microscopy, x-ray diffraction (XRD), and Raman spectroscopy measurements. It is observed that Ge-rich Si{sub (1-x)}Ge{sub x} nanocrystals do not hold their compositional uniformity when annealed at high temperatures for enough long time. A segregation process leading to separation of Ge and Si atoms from each other takes place. This process has been evidenced by a double peak formation in the XRD and Raman spectra. We attributed this phase separation to the differences in atomic size, surface energy, and surface diffusion disparity between Si and Ge atoms leading to the formation of nonhomogenous structure consist of a Si-rich SiGe core covered by a Ge-rich SiGe shell. This experimental observation is consistent with the result of reported theoretical and simulation methods.

  4. explorations The Train STaTion

    E-Print Network [OSTI]

    Hernes, Peter J.

    Music by Yevgeny Simkin Many thanks to Yevgeny Simkin, peter lichtenfels, Bella Merlin and the wonderful

  5. UTICA 4, NEW YORK COFIPOR~TION

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling7 AugustAFRICAN3uj: ;;IDEC. i'JournalDROf fORGE

  6. In situ toughened SiC ceramics with Al-B-C additions and oxide-coated SiC platelet/SiC composites

    SciTech Connect (OSTI)

    Cao, J. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering; [Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

    1996-12-01T23:59:59.000Z

    This work aimed at fabrication and characterization of high toughness SiC ceramics through the applications of in situ toughening and SiC platelet reinforcement. The processing-microstructure-property relations of hot pressed SiC with Al, B, and C additions (designated as ABC-SiC) were investigated. Through a liquid phase sintering mechanism, dense SiC was obtained by hot pressing at a temperature as low as 1,700 C with 3 wt% Al, 0.6 wt% B, and 2 wt% C additions. These sintering aids also enhanced the {beta}-to-{alpha} (3C-to-4H) phase transformation, which promoted SiC grains to grow into plate-like shapes. Under optimal processing conditions, the microstructure exhibited high-aspect-ratio plate-shaped grains with a thin (< 1 nm) Al-containing amorphous grain boundary film. The mechanical properties of the toughened SiC and the composites were evaluated in comparison with a commercial Hexoloy SiC under identical test conditions. The C-curve behavior was examined using the strength-indentation load relationship and compared with that directly measured using precracked compact tension specimens. The in situ toughened ABC-SiC exhibited much improved flaw tolerance and a significantly rising R-curve behavior. A steady-state toughness in excess of 9 MPam{sup 1/2} was recorded for the ABC-SiC in comparison to a single valued toughness below 3 MPam{sup 1/2} for the Hexoloy. Toughening in the ABC-SiC was mainly attributed to grain bridging and subsequent pullout of the plate-shaped grains. The high toughness ABC-SiC exhibited a bend strength of 650 MPa with a Weibull modulus of 19; in comparison, the commercial SiC showed a bend strength of 400 MPa with a Weibull modulus of 6. Higher fracture toughness was also achieved by the reinforcement of SiC platelets, encapsulated with alumina, yttria, or silica, in a SiC matrix.

  7. Thermal Conductivity of SiC/Si Composites Porting PNNL EMTA Code for Fusion Analyses

    SciTech Connect (OSTI)

    Henager, Charles H.; Nguyen, Ba Nghiep

    2013-04-19T23:59:59.000Z

    An existing modeling method, the EMTA (Eshelby-Mori-Tanaka approach) modeling approach [1], is applied to the study of SiC/SiC 2D woven composites for fusion reactor applications for the first time, to the best of our knowledge, with excellent results. We compare EMTA model results to existing thermal conductivity data for these materials and suggest that in the future this approach can be beneficial by providing us with tools to further optimize these composite materials for fusion energy applications since the EMTA method and code can address both thermal and mechanical properties with the same framework.

  8. Compositional evolution of SiGe islands on patterned Si (001) substrates

    SciTech Connect (OSTI)

    Zhang Jianjun [Institute of Semiconductor and Solid State Physics, University Linz, A-4040 Linz (Austria); Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Rastelli, Armando; Schmidt, Oliver G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Bauer, Guenther [Institute of Semiconductor and Solid State Physics, University Linz, A-4040 Linz (Austria)

    2010-11-15T23:59:59.000Z

    The authors investigate, by atomic-force-microscopy-based nanotomography, the composition evolution of ordered SiGe islands grown on pit-patterned Si (001) substrates as their size and aspect ratio increase with increasing Ge deposition. Compared to islands grown on flat substrates, the ordered island arrays show improved size, shape, and compositional homogeneity. The three-dimensional composition profiles of individual pyramids, domes, and barns reveal that the Ge fraction at the base and in subsurface regions of the islands decreases with increasing amount of deposited Ge.

  9. Operational Challenges in Gas-To-Liquid (GTL) Transportation Through Trans Alaska Pipeline System (TAPS)

    SciTech Connect (OSTI)

    Godwin A. Chukwu; Santanu Khataniar; Shirish Patil; Abhijit Dandekar

    2006-06-30T23:59:59.000Z

    Oil production from Alaskan North Slope oil fields has steadily declined. In the near future, ANS crude oil production will decline to such a level (200,000 to 400,000 bbl/day) that maintaining economic operation of the Trans-Alaska Pipeline System (TAPS) will require pumping alternative products through the system. Heavy oil deposits in the West Sak and Ugnu formations are a potential resource, although transporting these products involves addressing important sedimentation issues. One possibility is the use of Gas-to-Liquid (GTL) technology. Estimated recoverable gas reserves of 38 trillion cubic feet (TCF) on the North Slope of Alaska can be converted to liquid with GTL technology and combined with the heavy oils for a product suitable for pipeline transport. Issues that could affect transport of this such products through TAPS include pumpability of GTL and crude oil blends, cold restart of the pipeline following a prolonged winter shutdown, and solids deposition inside the pipeline. This study examined several key fluid properties of GTL, crude oil and four selected blends under TAPS operating conditions. Key measurements included Reid Vapor Pressure, density and viscosity, PVT properties, and solids deposition. Results showed that gel strength is not a significant factor for the ratios of GTL-crude oil blend mixtures (1:1; 1:2; 1:3; 1:4) tested under TAPS cold re-start conditions at temperatures above - 20 F, although Bingham fluid flow characteristics exhibited by the blends at low temperatures indicate high pumping power requirements following prolonged shutdown. Solids deposition is a major concern for all studied blends. For the commingled flow profile studied, decreased throughput can result in increased and more rapid solid deposition along the pipe wall, resulting in more frequent pigging of the pipeline or, if left unchecked, pipeline corrosion.

  10. Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

    SciTech Connect (OSTI)

    Michon, A.; Vezian, S.; Portail, M. [CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne (France); Ouerghi, A. [CNRS-LPN, Route de Nozay, 91460 Marcoussis (France); Zielinski, M.; Chassagne, T. [NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)

    2010-10-25T23:59:59.000Z

    We propose to grow graphene on SiC by a direct carbon feeding through propane flow in a chemical vapor deposition reactor. X-ray photoemission and low energy electron diffraction show that propane allows to grow few-layer graphene (FLG) on 6H-SiC(0001). Surprisingly, FLG grown on (0001) face presents a rotational disorder similar to that observed for FLG obtained by annealing on (000-1) face. Thanks to a reduced growth temperature with respect to the classical SiC annealing method, we have also grown FLG/3C-SiC/Si(111) in a single growth sequence. This opens the way for large-scale production of graphene-based devices on silicon substrate.

  11. Isoscalar giant resonance strength in Si-28

    E-Print Network [OSTI]

    Youngblood, David H.; Lui, Y. -W; Clark, H. L.

    2007-01-01T23:59:59.000Z

    PHYSICAL REVIEW C 76, 027304 (2007) Isoscalar giant resonance strength in 28Si D. H. Youngblood, Y.-W. Lui, and H. L. Clark Cyclotron Institute, Texas A&M University, College Station, Texas 77843, USA (Received 7 May 2007; published 28 August... that somewhat mimic an E1 angular distribution. This work was supported in part by the U.S. Department of Energy under grant No. DE-FG03-93ER40773 and by The Robert A. Welch Foundation under grant No. A-0558. [1] D. H. Youngblood, Y.-W. Lui, and H. L. Clark...

  12. Phonon-assisted transient electroluminescence in Si

    SciTech Connect (OSTI)

    Cheng, Tzu-Huan, E-mail: f94943139@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan (China); Chu-Su, Yu [Institute of Biomedical Engineering, National Taiwan University, Taipei, Taiwan and Department of Laboratory Medicine, National Taiwan University Hospital, Taipei, Taiwan (China); Liu, Chien-Sheng [Institute of Biomedical Engineering, National Taiwan University, Taipei, Taiwan (China); Lin, Chii-Wann [Institute of Biomedical Engineering and Institute of Electrical Engineering, National Taiwan University, Taipei, Taiwan (China)

    2014-06-30T23:59:59.000Z

    The phonon-replica infrared emission is observed at room temperature from indirect band gap Si light-emitting diode under forward bias. With increasing injection current density, the broadened electroluminescence spectrum and band gap reduction are observed due to joule heating. The spectral-resolved temporal response of electroluminescence reveals the competitiveness between single (TO) and dual (TO?+?TA) phonon-assisted indirect band gap transitions. As compared to infrared emission with TO phonon-replica, the retarder of radiative recombination at long wavelength region (?1.2??m) indicates lower transition probability of dual phonon-replica before thermal equivalent.

  13. Do Si stars undergo any magnetic braking?

    E-Print Network [OSTI]

    P. North

    1998-02-23T23:59:59.000Z

    The old question of rotational braking of Ap Si stars is revisited on the empirical side, taking advantage of the recent Hipparcos results. Field stars with various evolutionary states are considered, and it is shown that the loose correlation between their rotational period and their surface gravity is entirely compatible with conservation of angular momentum. No evidence is found for any loss of angular momentum on the Main Sequence, which confirms earlier results based on less reliable estimates of surface gravity. The importance of reliable, fundamental Teff determinations of Bp and Ap stars is emphasized.

  14. Si Brilliant Technology Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt LtdShawangunk, New York: EnergySumoncleShidaMinnesota:Shreveport,ShrubShyamSi

  15. A=17Si (1993TI07)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del(ANL-IN-03-032) -Less2012KE01)93TI07) (Not observed) See (1983ANZQ, 1988WA18,Si

  16. Si Pro AS | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit with form HistoryRistma AGShandongShirke Biofuels JumpSi Pro AS Jump to:

  17. Thermomechanical Performance of Si-Ti-C-O and Sintered SiC Fiber-Bonded Ceramics at High Temperatures

    SciTech Connect (OSTI)

    Matsunaga, Tadashi [ORNL; Lin, Hua-Tay [ORNL; Singh, Mrityunjay [NASA-Glenn Research Center, Cleveland; Kajii, Shinji [Ube Industries, Ltd.; Matsunaga, Kenji [Ube Industries, Ltd.; Ishikawa, Toshihiro [Ube Industries, Ltd.

    2011-01-01T23:59:59.000Z

    The stress-temperature-lifetime response of Si-Ti-C-O fiber-bonded ceramic (Tyrannohex ) and sintered SiC fiber-bonded ceramic (SA-Tyrannohex ) materials were investigated in air from 500 to 1150 C and 500 to 1400 C, respectively. The apparent threshold stress of Si-Ti-C-O fiber-bonded ceramic was about 175 MPa in the 500-1150 C temperature range. When the applied stress of the sintered SiC fiber-bonded ceramic was below an apparent threshold stress (e.g., ~225MPa) for tests conducted 1150 C, no failures were observed for lifetimes up to 1000h. In the case of sintered SiC fiber-bonded ceramic, at the temperature of 1300 C, the apparent threshold stress decreased to 175 MPa. The decrease in strength seemed to be caused by grain growth which was confirmed from the SEM fractography. Both fiber-bonded ceramics exhibited much higher durability than a commercial SiC/SiC composite at temperatures above 500 C. In addition, results suggested that the sintered SiC fiber-bonded ceramic (SA-Tyrannohex) is more stable than a Hi-Nicalon/MI SiC composite with BN/SiC fiber coating at temperatures above 1300 C.

  18. First-principles study of the PdSi system and Pd(001)/SiC(001) hetero-structure

    SciTech Connect (OSTI)

    Turchi, P.E.A. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Ivashchenko, V.I. [National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine)

    2014-11-01T23:59:59.000Z

    First-principles molecular dynamics simulations of the Pd(001)/3CSiC(001) nano-layered structure were carried out at different temperatures ranging from 300 to 2100 K. Various PdSi (Pnma, Fm3m, P6m2, Pm3m), Pd2Si (P6?2m, P63/mmc, P3m1, P3?1m) and Pd3Si (Pnma, P6322, Pm3m, I4/mmm) structures under pressure were studied to identify the structure of the Pd/Si and Pd/C interfaces in the Pd/SiC systems at high temperatures. It was found that a large atomic mixing at the Pd/Si interface occurred at 15001800 K, whereas the Pd/C interface remained sharp even at the highest temperature of 2100 K. At the Pd/C interface, voids and a graphite-like clustering were detected. Palladium and silicon atoms interact at the Pd/Si interface to mostly form C22-Pd2Si and D011-Pd3Si fragments, in agreement with experiment.

  19. cond-mat/991022815Oct1999 Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells

    E-Print Network [OSTI]

    Ihn, Thomas

    cond-mat/991022815Oct1999 Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum, Switzerland (October 15, 1999) Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal in a variety of material systems, such as p-type25 and n-type6,7 GaAs heterostructures, Si/SiGe8,9 and AlAs10

  20. Microwave joining of SiC ceramics and composites

    SciTech Connect (OSTI)

    Ahmad, I.; Silberglitt, R.; Tian, Y.L. [FM Technologies, Inc., Fairfax, VA (United States); Katz, J.D. [Los Alamos National Lab., NM (United States)

    1997-04-01T23:59:59.000Z

    Potential applications of SiC include components for advanced turbine engines, tube assemblies for radiant burners and petrochemical processing and heat exchangers for high efficiency electric power generation systems. Reliable methods for joining SiC are required in order to cost-effectively fabricate components for these applications from commercially available shapes and sizes. This manuscript reports the results of microwave joining experiments performed using two different types of SiC materials. The first were on reaction bonded SiC, and produced joints with fracture toughness equal to or greater than that of the base material over an extended range of joining temperatures. The second were on continuous fiber-reinforced SiC/SiC composite materials, which were successfully joined with a commercial active brazing alloy, as well as by using a polymer precursor.

  1. Compatibility of SiC and SiC Composites with Molten Lead

    SciTech Connect (OSTI)

    H Tunison

    2006-03-07T23:59:59.000Z

    The choice of structural material candidates to contain Lead at 1000 C are limited in number. Silicon carbide composites comprise one choice of possible containment materials. Short term screening studies (120 hours) were undertaken to study the behavior of Silicon Carbide, Silicon Nitride, elemental Silicon and various Silicon Carbide fiber composites focusing mainly on melt infiltrated composites. Isothermal experiments at 1000 C utilized graphite fixtures to contain the Lead and material specimens under a low oxygen partial pressure environment. The corrosion weight loss values (grams/cm{sup 2} Hr) obtained for each of the pure materials showed SiC (monolithic CVD or Hexoloy) to have the best materials compatibility with Lead at this temperature. Increased weight loss values were observed for pure Silicon Nitride and elemental Silicon. For the SiC fiber composite samples those prepared using a SiC matrix material performed better than Si{sub 3}N{sub 4} as a matrix material. Composites prepared using a silicon melt infiltration process showed larger corrosion weight loss values due to the solubility of silicon in lead at these temperatures. When excess silicon was removed from these composite samples the corrosion performance for these material improved. These screening studies were used to guide future long term exposure (both isothermal and non-isothermal) experiments and Silicon Carbide composite fabrication work.

  2. Tribological Properties of Self-assembled Monolayers on Au, SiOx and Si Surfaces

    SciTech Connect (OSTI)

    KIM,HYUN I.; BOIADJIEV,V.; HOUSTON,JACK E.; ZHU,X.-Y; KIELY,J.D.

    2000-07-20T23:59:59.000Z

    Using interracial force microscopy (IFM), the tribological properties of self-assembled monolayer (SAM) on Si surfaces produced by a new chemical strategy are investigated and compared to those of classical SAM systems, which include alkanethiols on Au and alkylsilanes on SiO{sub x}. The new SAM films are prepared by depositing n-alkyl chains with OH-terminations onto Cl-terminated Si substrates. The chemical nature of the actual lubricating molecules, n-dodecyl, is kept constant in all three thin film systems for direct comparison and similarities and differences in tribological properties are observed. The adhesion strength is virtually identical for all three systems; however, frictional properties differ due to differences in film packing. Differences in the chemical bonds that attach the lubricant molecules to the substrate are also discussed as they influence variations in film wear and durability. It is demonstrated that the new SAM films are capable of controlling the friction and adhesion of Si surfaces as well as the classical SAMs in addition to providing a greater potential to be more reproducible and more durable.

  3. Asymmetric Relaxation of SiGe in Patterned Si Line Structures

    SciTech Connect (OSTI)

    Wormington, Matthew [Bede Scientific Inc., 14 Inverness Drive East, Suite H-100, Centennial, CO 80112 (United States); Lafford, Tamzin; Godny, Stephane; Ryan, Paul [Bede plc, Belmont Business Park, Durham, DH1 1TW (United Kingdom); Loo, Roger; Hikavyy, Andriy; Caymax, Matty [IMEC Kapeldreef 75, B 3001 Leuven (Belgium); Bhouri, Nada [IMEC Kapeldreef 75, B 3001 Leuven (Belgium); Institut National Polytechnique de Grenoble, 46, avenue Felix Viallet, Grenoble Cedex 1 (France)

    2007-09-26T23:59:59.000Z

    High resolution X-ray diffraction (HRXRD) measurements were performed using a commercially-available X-ray metrology tool, the BedeMetrix-L, on small test pads containing arrays of SiGe line structures selectively deposited in Si recesses with various window dimensions. Reciprocal space maps (RSMs) were performed in two orthogonal <110> directions in order to determine the lattice parameter parallel and perpendicular to the lines. With narrow lines, asymmetric relaxation effects were seen: the SiGe was fully strained along the long dimension of the lines while there was significant relaxation along the short dimension of the lines. The magnitude of the relaxation increased significantly for lines with short dimension below about 1 {mu}m. We show how to determine the lattice parameters, and hence the strain of the SiGe in the [110] and [-110] directions, the Ge composition and the relaxation initially using RSMs, but with an extension to measurements more suitable for in-fab metrology.

  4. Steel-SiC Metal Matrix Composite Development

    SciTech Connect (OSTI)

    Smith, Don D.

    2005-07-17T23:59:59.000Z

    The goal of this project is to develop a method for fabricating SiC-reinforced high-strength steel. We are developing a metal-matrix composite (MMC) in which SiC fibers are be embedded within a metal matrix of steel, with adequate interfacial bonding to deliver the full benefit of the tensile strength of the SiC fibers in the composite.

  5. Method for the hydrogenation of poly-si

    DOE Patents [OSTI]

    Wang, Qi

    2013-11-12T23:59:59.000Z

    A method for hydrogenating poly-si. Poly-si is placed into the interior of a chamber. A filament is placed into the interior of a chamber. The base pressure of the interior of the chamber is evacuated, preferably to 10.sup.-6 Torr or less. The poly-si is heated for a predetermined poly-si heating time. The filament is heated by providing an electrical power to the filament. Hydrogen is supplied into the pressurized interior of the chamber comprising the heated poly-si and the heated filament. Atomic hydrogen is produced by the filament at a rate whereby the atomic hydrogen surface density at the poly-si is less than the poly-si surface density. Preferably, the poly-si is covered from the atomic hydrogen produced by the heated filament for a first predetermined covering time. Preferably, the poly-si is then uncovered from the atomic hydrogen produced by the heated filament for a first hydrogenation time.

  6. Geothermal: Sponsored by OSTI -- Final Report: 11-SI-006 Creating...

    Office of Scientific and Technical Information (OSTI)

    Final Report: 11-SI-006 Creating Optimal Fracture Networks Geothermal Technologies Legacy Collection HelpFAQ | Site Map | Contact Us HomeBasic Search About Publications Advanced...

  7. Synthesis and Characterization of Structured Si-Carbon Nanocomposite...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Si-Carbon Nanocomposite Anodes and Functional Polymer Binders Vehicle Technologies Office Merit Review 2014: High Energy, Long Cycle Life Lithium-ion Batteries for EV Applications...

  8. al si alloys: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    de Extensin Universitaria Red Metropolitana Red Vsquez, Carlos 488 Graeber et al. 2014 1 Supporting Information (SI Appendix) Biology and Medicine Websites...

  9. al sio2 si: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    de Extensin Universitaria Red Metropolitana Red Vsquez, Carlos 497 Graeber et al. 2014 1 Supporting Information (SI Appendix) Biology and Medicine Websites...

  10. al si ti: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    de Extensin Universitaria Red Metropolitana Red Vsquez, Carlos 385 Graeber et al. 2014 1 Supporting Information (SI Appendix) Biology and Medicine Websites...

  11. al si mg: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    de Extensin Universitaria Red Metropolitana Red Vsquez, Carlos 374 Graeber et al. 2014 1 Supporting Information (SI Appendix) Biology and Medicine Websites...

  12. al si fe: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    de Extensin Universitaria Red Metropolitana Red Vsquez, Carlos 399 Graeber et al. 2014 1 Supporting Information (SI Appendix) Biology and Medicine Websites...

  13. Sandia National Laboratories: c-Si PV materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    c-Si PV materials Sandians Win 'Best Paper' Award at Photovoltaic Conference in Japan On March 4, 2015, in Computational Modeling & Simulation, Energy, Facilities, News, News &...

  14. Sponge-like Si-SiO{sub 2} nanocompositeMorphology studies of spinodally decomposed silicon-rich oxide

    SciTech Connect (OSTI)

    Friedrich, D.; Schmidt, B.; Heinig, K. H.; Liedke, B.; Mcklich, A.; Hbner, R. [Helmholtz-Zentrum Dresden Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany)] [Helmholtz-Zentrum Dresden Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); Wolf, D. [Triebenberg Laboratory, Institute of Structure Physics, Technische Universitt Dresden, 01062 Dresden (Germany)] [Triebenberg Laboratory, Institute of Structure Physics, Technische Universitt Dresden, 01062 Dresden (Germany); Klling, S. [Fraunhofer Center Nanoelectronic Technologies, Knigsbrcker Str. 180, 01099 Dresden (Germany)] [Fraunhofer Center Nanoelectronic Technologies, Knigsbrcker Str. 180, 01099 Dresden (Germany); Mikolajick, T. [NaMLab GmbH, Nthnitzer Str. 64, 01187 Dresden (Germany) [NaMLab GmbH, Nthnitzer Str. 64, 01187 Dresden (Germany); Technische Universitt Dresden, Nthnitzer Str. 64, 01187 Dresden (Germany)

    2013-09-23T23:59:59.000Z

    Sponge-like Si nanostructures embedded in SiO{sub 2} were fabricated by spinodal decomposition of sputter-deposited silicon-rich oxide with a stoichiometry close to that of silicon monoxide. After thermal treatment a mean feature size of about 3 nm was found in the phase-separated structure. The structure of the Si-SiO{sub 2} nanocomposite was investigated by energy-filtered transmission electron microscopy (EFTEM), EFTEM tomography, and atom probe tomography, which revealed a percolated Si morphology. It was shown that the percolation of the Si network in 3D can also be proven on the basis of 2D EFTEM images by comparison with 3D kinetic Monte Carlo simulations.

  15. Roughness of the SiC/SiO{sub 2} vicinal interface and atomic structure of the transition layers

    SciTech Connect (OSTI)

    Liu, Peizhi; Li, Guoliang; Duscher, Gerd, E-mail: gduscher@utk.edu [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996 (United States); Sharma, Yogesh K.; Ahyi, Ayayi C.; Isaacs-Smith, Tamara; Williams, John R.; Dhar, Sarit [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

    2014-11-01T23:59:59.000Z

    The SiC/SiO{sub 2} interface is generally considered to be the cause for the reduced electron mobility of SiC power devices. Previous studies have shown a correlation between the mobility and the transition layer width at the SiC/SiO{sub 2} interface. The authors investigated this interface with atomic resolution Z-contrast imaging and electron energy-loss spectroscopy, and discovered that this transition region was due to the roughness of the vicinal interface. The roughness of a vicinal interface consisted of atomic steps and facets deviating from the ideal off-axis cut plane. The authors conclude that this roughness is limiting the mobility in the channels of SiC MOSFETs.

  16. Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures

    SciTech Connect (OSTI)

    Novikov, A. V., E-mail: anov@ipm.sci-nnov.ru; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Platonov, V. V. [Sarov Physicotechnical Institute (Russian Federation); Obolenskiy, S. V. [Nizhni Novgorod State University (Russian Federation); Lobanov, D. N.; Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2010-03-15T23:59:59.000Z

    This study is concerned with the effect of irradiation on the luminescence properties of low-dimensional Si/Ge heterostructures with different degrees of spatial localization of charge carriers. It is shown that the radiation stability of Si/Ge heterostructures is improved with increasing efficiency of localization of charge carriers in the structures. The spatial localization of charge carriers in the SiGe nanostructures decreases the probability of nonradiative recombination of charge carriers at radiation defects produced in the Si matrix. It is demonstrated that, among the structures explored in the study, the highest radiation stability of luminescence properties is inherent in the multilayered structures containing self-assembled Ge(Si) nanoislands, in which the most efficient spatial localization of charge carriers is attained. In this case, the localization is three- and two-dimensional, correspondingly, for holes in the islands and for electrons in the Si layers that separate neighboring layers containing the islands.

  17. EIS-0450: TransWest Express 600 kV Direct Current Transmission Project in Wyoming, Colorado, Utah, and Nevada

    Broader source: Energy.gov [DOE]

    This EIS, being prepared jointly by DOEs Western Area Power Administration and the Department of the Interiors Bureau of Land Management (Wyoming State Office), evaluates the environmental impacts of granting a right-of-way for the TransWest Express 600-kilovolt Direct Current Transmission Project and amending a land use plan. The project consists of an overhead transmission line that would extend approximately 725 miles from south-central Wyoming, through Colorado and Utah. Western proposes to be a joint owner of the project. Additional information is available at http://www.blm.gov/wy/st/en/info/NEPA/documents/hdd/transwest.html.

  18. Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Diffusion of Fission Product Surrogates

    SciTech Connect (OSTI)

    Henager, Charles H.; Jiang, Weilin

    2014-11-01T23:59:59.000Z

    MAX phases, such as titanium silicon carbide (Ti3SiC2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti3SiC2 has been suggested in the literature as a possible fuel cladding material. Prior to the application, it is necessary to investigate diffusivities of fission products in the ternary compound at elevated temperatures. This study attempts to obtain relevant data and make an initial assessment for Ti3SiC2. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti3SiC2, SiC, and a dual-phase nanocomposite of Ti3SiC2/SiC synthesized at PNNL. Thermal annealing and in-situ Rutherford backscattering spectrometry (RBS) were employed to study the diffusivity of the various implanted species in the materials. In-situ RBS study of Ti3SiC2 implanted with Au ions at various temperatures was also performed. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti3SiC2 occurs during ion implantation at 873 K. Cs in Ti3SiC2 is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti3SiC2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Further studies of the related materials are recommended.

  19. Improvement of magnetic and structural stabilities in high-quality Co{sub 2}FeSi{sub 1?x}Al{sub x}/Si heterointerfaces

    SciTech Connect (OSTI)

    Yamada, S., E-mail: yamada@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531 (Japan); Tanikawa, K.; Oki, S.; Kawano, M.; Miyao, M. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Hamaya, K. [Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531 (Japan); CREST, Japan Science and Technology Agency, Gobancho, Tokyo 102-0075 (Japan)

    2014-08-18T23:59:59.000Z

    We study high-quality Co{sub 2}FeSi{sub 1?x}Al{sub x} Heusler compound/Si (0 ? x ? 1) heterointerfaces for silicon (Si)-based spintronic applications. In thermal treatment conditions, the magnetic and structural stabilities of the Co{sub 2}FeSi{sub 1?x}Al{sub x}/Si heterointerfaces are improved with increasing x in Co{sub 2}FeSi{sub 1?x}Al{sub x}. Compared with L2{sub 1}-ordered Co{sub 2}FeSi/Si, B2-ordered Co{sub 2}FeAl/Si can suppress the diffusion of Si atoms into the Heusler-compound structure. This experimental study will provide an important knowledge for applications in Si-based spin transistors with metallic source/drain contacts.

  20. Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Thermal and Mechanical Properties

    SciTech Connect (OSTI)

    Henager, Charles H.; Alvine, Kyle J.; Roosendaal, Timothy J.; Shin, Yongsoon; Nguyen, Ba Nghiep; Borlaug, Brennan A.; Jiang, Weilin

    2014-04-01T23:59:59.000Z

    SiC-polymers (pure polycarbosilane and polycarbosilane filled with SiC-particles) are being combined with Si and TiC powders to create a new class of polymer-derived ceramics for consideration as advanced nuclear materials in a variety of applications. Compared to pure SiC these materials have increased fracture toughness with only slightly reduced thermal conductivity. Future work with carbon nanotube (CNT) mats will be introduced with the potential to increase the thermal conductivity and the fracture toughness. At present, this report documents the fabrication of a new class of monolithic polymer derived ceramics, SiC + SiC/Ti3SiC2 dual phase materials. The fracture toughness of the dual phase material was measured to be significantly greater than Hexoloy SiC using indentation fracture toughness testing. However, thermal conductivity of the dual phase material was reduced compared to Hexoloy SiC, but was still appreciable, with conductivities in the range of 40 to 60 W/(m K). This report includes synthesis details, optical and scanning electron microscopy images, compositional data, fracture toughness, and thermal conductivity data.

  1. Analysis of X-Ray Diffraction as a Probe of Interdiffusion in Si/SiGe Heterostructures

    SciTech Connect (OSTI)

    Brennan, Sean M

    2003-08-20T23:59:59.000Z

    We investigate numerical simulations that utilize a non-linear interdiffusion solver and dynamical x-ray diffraction calculations to predict the local composition evolution in low Ge concentration Si/SiGe superlattices and their diffraction patterns during annealing. Superlattice satellite peak decay rates are compared with experimentally measured values and simulated diffraction patterns are matched directly to data with good success. The simulations are used to test the sensitivity of x-ray diffraction to various uncertainties commonly encountered when measuring interdiffusion at Si/SiGe interfaces. It is found that the most serious errors result from variations in the Ge content across the surface of the wafer. For example, the resolution limit of most experimental techniques used to measure Ge concentration in a SiGe film is -1 at.%, for a film with 11% mean Ge concentration annealed for 5 hours at 870 C, this level of error will cause the observed interdiffusivity values to deviate by -25% or +50%. The simulations are further used to show that for Si/SiGe interdiffusion, superlattice diffraction produces valid measurements when applied to 004 superlattice satellite peaks and square wave composition modulations even though it is only exactly applicable to satellite peaks about 000 reflection and to sinusoidal composition modulations. Finally, we show that proper interpretation of x-ray scattering data to extract Si/SiGe interdiffusivity values must account for the strong dependence of the interdiffusivity on Ge concentration.

  2. Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting stamps

    SciTech Connect (OSTI)

    Vasko, Stephanie E.; Kapetanovic, Adnan; Talla, Vamsi; Brasino, Michael D.; Zhu, Zihua; Scholl, Andreas; Torrey, Jessica D.; Rolandi, Marco

    2011-05-16T23:59:59.000Z

    Precise materials integration in nanostructures is fundamental for future electronic and photonic devices. We demonstrate Si, Ge, and SiGe nanostructure direct-write with deterministic size, geometry, and placement control. The biased probe of an atomic force microscope (AFM) reacts diphenylsilane or diphenylgermane to direct-write carbon-free Si, Ge, and SiGe nano and heterostructures. Parallel directwrite is available on large areas by substituting the AFM probe with conducting microstructured stamps. This facile strategy can be easily expanded to a broad variety of semiconductor materials through precursor selection.

  3. Monolithic integration of AlGaInP laser diodes on SiGe/Si substrates by molecular beam epitaxy

    SciTech Connect (OSTI)

    Kwon, O.; Boeckl, J. J.; Lee, M. L.; Pitera, A. J.; Fitzgerald, E. A.; Ringel, S. A. [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

    2006-07-01T23:59:59.000Z

    Room temperature operation of visible AlGaInP laser diodes epitaxially integrated on Si was demonstrated. Compressively strained laser heterostructures were grown by molecular beam epitaxy (MBE) on low dislocation density SiGe/Si substrates, where the threading dislocation density of the top relaxed Ge layers was measured in the range of 2x10{sup 6} cm{sup -2}. A threshold current density of J{sub th}{approx}1.65 kA/cm{sup 2} for the as-cleaved, gain-guided AlGaInP laser grown on SiGe/Si was obtained at the peak emission wavelength of 680 nm under pulsed mode current injection. These results show that not only can high quality AlGaInP materials grown by MBE be achieved on Si via relaxed SiGe interlayers, but the prototype demonstration of laser diode operation on Si illustrates that very defect sensitive optoelectronics in the III-P system can indeed be integrated with Si substrates by heteroepitaxial methods.

  4. Ceramic Technology Project database: September 1990 summary report. [SiC, SiN, whisker-reinforced SiN, ZrO-toughened aluminas, zirconias, joints

    SciTech Connect (OSTI)

    Keyes, B.L.P.

    1992-06-01T23:59:59.000Z

    Data generated within the Ceramic Technology Project (CTP) represent a valuable resource for both research and industry. The CTP database was created to provide easy access to this information in electronic and hardcopy forms by using a computerized database and by issuing periodic hardcopy reports on the database contents. This report is the sixth in a series of semiannual database summaries and covers recent additions to the database, including joined brazed specimen test data. It covers 1 SiC, 34 SiN, 10 whisker-reinforced SiN, 2 zirconia-toughened aluminas, 8 zirconias, and 34 joints.

  5. Western Australian Hub of SiMERR Australia (National Centre of Science, ICT and

    E-Print Network [OSTI]

    SiMERR WA Western Australian Hub of SiMERR Australia (National Centre of Science, ICT and Mathematics Education for Rural and Regional Australia) Background Since 2005 SiMERR WA, the Western Australian Hub of SiMERR Australia, has been led by a team of academics from Curtin University. Si

  6. OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR Xunming Deng

    E-Print Network [OSTI]

    Deng, Xunming

    OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR CELLS Xunming Deng Department cells, all employing high- quality a-SiGe cells, are reviewed in this paper. Incorporating various improvements in device fabrication, the UT group fabricated 1) triple-junction a-Si/a-SiGe/a- SiGe solar cells

  7. SiGe-On-Insulator (SGOI): Two Structures for CMOS Application

    E-Print Network [OSTI]

    SiGe-On-Insulator (SGOI): Two Structures for CMOS Application Zhiyuan Cheng,a) Jongwan Jung, b Massachusetts Avenue, Cambridge, MA 02141 a) E-mail: cheng@alum.MIT.EDU Abstract Two SiGe-on-insulator (SGOI enhancement on both electron and hole mobilities. Keywords strained-Si, SiGe, SiGe-on-Insulator, SGOI

  8. Flex Fuel Optimized SI and HCCI Engine

    SciTech Connect (OSTI)

    Zhu, Guoming; Schock, Harold; Yang, Xiaojian; Huisjen, Andrew; Stuecken, Tom; Moran, Kevin; Zhen, Ron; Zhang, Shupeng

    2013-09-30T23:59:59.000Z

    The central objective of the proposed work is to demonstrate an HCCI (homogeneous charge compression ignition) capable SI (spark ignited) engine that is capable of fast and smooth mode transition between SI and HCCI combustion modes. The model-based control technique was used to develop and validate the proposed control strategy for the fast and smooth combustion mode transition based upon the developed control-oriented engine; and an HCCI capable SI engine was designed and constructed using production ready two-step valve-train with electrical variable valve timing actuating system. Finally, smooth combustion mode transition was demonstrated on a metal engine within eight engine cycles. The Chrysler turbocharged 2.0L I4 direct injection engine was selected as the base engine for the project and the engine was modified to fit the two-step valve with electrical variable valve timing actuating system. To develop the model-based control strategy for stable HCCI combustion and smooth combustion mode transition between SI and HCCI combustion, a control-oriented real-time engine model was developed and implemented into the MSU HIL (hardware-in-the-loop) simulation environment. The developed model was used to study the engine actuating system requirement for the smooth and fast combustion mode transition and to develop the proposed mode transition control strategy. Finally, a single cylinder optical engine was designed and fabricated for studying the HCCI combustion characteristics. Optical engine combustion tests were conducted in both SI and HCCI combustion modes and the test results were used to calibrate the developed control-oriented engine model. Intensive GT-Power simulations were conducted to determine the optimal valve lift (high and low) and the cam phasing range. Delphi was selected to be the supplier for the two-step valve-train and Denso to be the electrical variable valve timing system supplier. A test bench was constructed to develop control strategies for the electrical variable valve timing (VVT) actuating system and satisfactory electrical VVT responses were obtained. Target engine control system was designed and fabricated at MSU for both single-cylinder optical and multi-cylinder metal engines. Finally, the developed control-oriented engine model was successfully implemented into the HIL simulation environment. The Chrysler 2.0L I4 DI engine was modified to fit the two-step vale with electrical variable valve timing actuating system. A used prototype engine was used as the base engine and the cylinder head was modified for the two-step valve with electrical VVT actuating system. Engine validation tests indicated that cylinder #3 has very high blow-by and it cannot be reduced with new pistons and rings. Due to the time constraint, it was decided to convert the four-cylinder engine into a single cylinder engine by blocking both intake and exhaust ports of the unused cylinders. The model-based combustion mode transition control algorithm was developed in the MSU HIL simulation environment and the Simulink based control strategy was implemented into the target engine controller. With both single-cylinder metal engine and control strategy ready, stable HCCI combustion was achived with COV of 2.1% Motoring tests were conducted to validate the actuator transient operations including valve lift, electrical variable valve timing, electronic throttle, multiple spark and injection controls. After the actuator operations were confirmed, 15-cycle smooth combustion mode transition from SI to HCCI combustion was achieved; and fast 8-cycle smooth combustion mode transition followed. With a fast electrical variable valve timing actuator, the number of engine cycles required for mode transition can be reduced down to five. It was also found that the combustion mode transition is sensitive to the charge air and engine coolant temperatures and regulating the corresponding temperatures to the target levels during the combustion mode transition is the key for a smooth combustion mode transition. As a summary, the proposed combust

  9. Functional Delivery of siRNA in Mice Using Dendriworms

    E-Print Network [OSTI]

    Bhatia, Sangeeta

    Functional Delivery of siRNA in Mice Using Dendriworms Amit Agrawal, Dal-Hee Min, Neetu Singh, Massachusetts 02115 S mall interfering RNAs (siRNAs) are 21 23 nucleotide double strand nu- cleic acid molecules research groups have used quan- tum dots,16 magnetic17 and gold nanoparticles18,19 as well as carbon nano

  10. The role of lattice excitation in Si etching

    E-Print Network [OSTI]

    Blair, Michael Ryan

    2014-01-01T23:59:59.000Z

    The chemistries of fluorine, F?, and xenon difluoride, XeF?, with clean Si are basically the same, while their chemistries diverge dramatically past I ML F coverage. With a clean Si surface, F? and XeF? react utilizing an ...

  11. Band-engineered Ge-on-Si lasers

    E-Print Network [OSTI]

    Liu, Jifeng

    We report optically-pumped Ge-on-Si lasers with direct gap emission near 1600 nm at room temperature. The Ge-on-Si material was band-engineered by tensile strain and n-type doping to compensate the energy difference between ...

  12. Si?-implanted Si-wire waveguide photodetectors for the mid-infrared

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Souhan, Brian; Lu, Ming; Grote, Richard R.; Chen, Christine P.; Huang, Hsu-Cheng; Driscoll, Jeffrey B.; Stein, Aaron; Bakhru, Hassaram; Bergman, Keren; Green, William M. J.; et al

    2014-01-01T23:59:59.000Z

    CMOS-compatible Si?-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 m are demonstrated. Responsivities of 9.9 2.0 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 2.7 4.5%. The dark current is found to vary from a few microamps down to less than a nanoamp after a post-implantation annealing of 350C. The measured photocurrent dependence on input power shows a linear correspondence over more than three decades, and the frequency response of a 250 m-length p-i-n device is measured to be ~1.7 GHz formorea wavelength of ? = 2.2 m, thus potentially opening up new communication bands for photonic integrated circuits.less

  13. Si?-implanted Si-wire waveguide photodetectors for the mid-infrared

    SciTech Connect (OSTI)

    Souhan, Brian [Columbia Univ., New York, NY (United States); Lu, Ming [Brookhaven National Lab. (BNL), Upton, NY (United States); Grote, Richard R. [Columbia Univ., New York, NY (United States); Chen, Christine P. [Columbia Univ., New York, NY (United States); Huang, Hsu-Cheng [Columbia Univ., New York, NY (United States); Driscoll, Jeffrey B. [Columbia Univ., New York, NY (United States); Stein, Aaron [Brookhaven National Lab. (BNL), Upton, NY (United States); Bakhru, Hassaram [State Univ. of New York at Albany, Albany, NY (United States); Bergman, Keren [Columbia Univ., New York, NY (United States); Green, William M. J. [IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center; Osgood, Jr., Richard M. [Columbia Univ., New York, NY (United States)

    2014-01-01T23:59:59.000Z

    CMOS-compatible Si?-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 m are demonstrated. Responsivities of 9.9 2.0 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 2.7 4.5%. The dark current is found to vary from a few microamps down to less than a nanoamp after a post-implantation annealing of 350C. The measured photocurrent dependence on input power shows a linear correspondence over more than three decades, and the frequency response of a 250 m-length p-i-n device is measured to be ~1.7 GHz for a wavelength of ? = 2.2 m, thus potentially opening up new communication bands for photonic integrated circuits.

  14. Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate

    SciTech Connect (OSTI)

    Ye, Han, E-mail: Dabombyh@aliyun.com; Yu, Zhongyuan [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, P.R.China (China)

    2014-11-15T23:59:59.000Z

    Patterning pit on Si(001) substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in (105) pits are systematically investigated by solving Schrdinger equation for heavy-hole, which resorts to inhomogeneous strain distribution and nonlinear composition-dependent band parameters. Uniform, partitioned and equilibrium composition profile (CP) in nanoisland and inverted pyramid structure are simulated separately. We demonstrate the huge impact of composition profile on localization of heavy-hole: wave function of ground state is confined near pit facets for uniform CP, at bottom of nanoisland for partitioned CP and at top of nanoisland for equilibrium CP. Moreover, such localization is gradually compromised by the size effect as pit filling ratio or pit size decreases. The results pave the fundamental guideline of designing nanoislands on pit-patterned substrates for desired applications.

  15. Modeling the plastic relaxation onset in realistic SiGe islands on Si(001)

    SciTech Connect (OSTI)

    Gatti, R.; Marzegalli, A.; Montalenti, F.; Miglio, Leo [Dipartimento di Scienza dei Materiali and L-NESS, Universita degli Studi di Milano-Bicocca, Via Cozzi 53, I-20125 Milano (Italy); Zinovyev, V. A. [Institute of Semiconductor Physics, Novosibirsk 630090 (Russian Federation)

    2008-11-01T23:59:59.000Z

    A detailed investigation of plastic relaxation onset in heteroepitaxial SiGe islands on Si(001) is presented. The strain field induced by a straight misfit-dislocation segment is modeled by finite-element-method (FEM) calculations in three dimensions, fully taking into account the interaction with the multifaceted free surfaces of realistic islands. The total elastic energies before and after the placement of a 60 deg. dislocation segment in the most favorable position are therefore evaluated by a full FEM approach, for different island sizes and compositions. The critical volumes with composition for inserting the dislocation are finally obtained and successfully compared with the data in a report by Marzegalli et al. [Phys. Rev. Lett. 99, 235505 (2007)], where experimental values are compared to a simpler approach.

  16. Charge Relaxation in a Single Electron Si/SiGe Double Quantum Dot

    E-Print Network [OSTI]

    K. Wang; C. Payette; Y. Dovzhenko; P. W. Deelman; J. R. Petta

    2013-04-15T23:59:59.000Z

    We measure the interdot charge relaxation time T_1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals the presence of a low lying excited state. We systematically measure T_1 as a function of detuning and interdot tunnel coupling and show that it is tunable over four orders of magnitude, with a maximum of 45 microseconds for our device configuration. Measured relaxation times are consistent with a phonon mediated energy relaxation process and indicate that low lying excited states may have important implications in the development of silicon spin qubits.

  17. Evidence of impurity assisted tunneling in SiGe/Si heterostructures

    SciTech Connect (OSTI)

    Zhukavin, R. Kh.; Bekin, N. A.; Lobanov, D. N.; Drozdov, M. N.; Drozdov, Yu. N.; Kozlov, D. V.; Pryakhin, D. A.; Shastin, V. N. [Institute for Physics of Microstructures RAS, 603950, Nizhny Novgorod, GSP-105 (Russian Federation); Shengurov, V. G. [Nizhny Novgorod State University, 603950, Nizhny Novgorod, Gagarina avenue, 23 (Russian Federation)

    2013-12-04T23:59:59.000Z

    The investigation of vertical transport in delta-doped SiGe/Si heterostructures has been presented. The asymmetrical triple barrier structure was grown by MBE technique. The delta layer of boron impurity was placed into the center of narrower quantum well. The growth procedure was followed by conventional processing including photolithography and plasma etching and magnetron sputtering. SIMS and X-rays diagnostics have been used to control the desired structure. The conductance of the structure has been measured at liquid helium temperature and analyzed. All pronounced resonances have been identified. The resonant feature near 60 mV has to be attributed to impurity-assisted tunneling that is supported by calculation of binding energy of the acceptor in the narrower quantum well.

  18. Local equilibrium and global relaxation of strained SiGe/Si(001) layers

    SciTech Connect (OSTI)

    Stoffel, M.; Rastelli, A.; Merdzhanova, T.; Schmidt, O. G. [Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart (Germany); Tersoff, J. [IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

    2006-10-15T23:59:59.000Z

    We investigate the morphological evolution of islands obtained by epitaxial growth of Ge on Si(001) substrates. We are able to obtain highly uniform distributions of SiGe islands, which exhibit a 'barn' shape. In addition to previously observed facets, we identify higher index facets, which are not observed in dome-shaped islands. The evolution of the island-related facet area provides evidence of a transition from domes to steeper barns, which continues the sequence of coherent island types before the onset of plastic relaxation. For higher Ge coverages, when plastically relaxed islands (superdomes) form, the island ensemble loses its homogeneity. This is essentially the result of anomalous coarsening, with material being transferred from coherent islands to larger superdomes.

  19. Localized Si enrichment in coherent self-assembled Ge islands grown by molecular beam epitaxy on (001)Si single crystal

    SciTech Connect (OSTI)

    Valvo, M. [Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95127 Catania (Italy); Bongiorno, C.; Giannazzo, F. [IMM-CNR, VIII strada 5, 95121 Catania (Italy); Terrasi, A. [Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95127 Catania (Italy); MATIS IMM-CNR UOS Catania (Universita), via S. Sofia 64, 95123 Catania (Italy)

    2013-01-21T23:59:59.000Z

    Transmission electron microscopy (TEM), atomic force microscopy, and Rutherford backscattering spectrometry (RBS) have been used to investigate the morphology, structure, and composition of self-assembled Ge islands grown on Si (001) substrates by molecular beam epitaxy (MBE) at different temperatures. Increasing the temperature from 550 Degree-Sign C to 700 Degree-Sign C causes progressive size and shape uniformity, accompanied by enhanced Si-Ge intermixing within the islands and their wetting layer. Elemental maps obtained by energy filtered-TEM (EF-TEM) clearly show pronounced Si concentration not only in correspondence of island base perimeters, but also along their curved surface boundaries. This phenomenon is strengthened by an increase of the growth temperature, being practically negligible at 550 Degree-Sign C, while very remarkable already at 650 Degree-Sign C. The resulting island shape is affected, since this localized Si enrichment not only provides strain relief near their highly stressed base perimeters but it also influences the cluster surface energy by effective alloying, so as to form Si-enriched SiGe interfaces. Further increase to 700 Degree-Sign C causes a shape transition where more homogenous Si-Ge concentration profiles are observed. The crucial role played by local 'flattened' alloyed clusters, similar to truncated pyramids with larger bases and enhanced Si enrichment at coherently stressed interfaces, has been further clarified by EF-TEM analysis of a multi-layered Ge/Si structure containing stacked Ge islands grown at 650 Degree-Sign C. Sharp accumulation of Si has been here observed not only in proximity of the uncapped island surface in the topmost layer but also at the buried Ge/Si interfaces and even in the core of such capped Ge islands.

  20. Sidewall damage in plasma etching of Si/SiGe heterostructures

    SciTech Connect (OSTI)

    Ding, R.; Klein, L. J.; Friesen, Mark G.; Eriksson, M. A.; Wendt, A. E. [Materials Science Program, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); IBM TJ Watson Research Center, Yorktown Heights, New York 10598 (United States); Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2009-07-15T23:59:59.000Z

    Plasma etching is a critical tool in the fabrication of Si/SiGe heterostructure quantum devices, but it also presents challenges, including damage to etched feature sidewalls that affects device performance. Chemical and structural changes in device feature sidewalls associated with plasma-surface interactions are considered damage, as they affect band structure and electrical conduction in the active region of the device. Here the authors report the results of experiments designed to better understand the mechanisms of plasma-induced sidewall damage in modulation-doped Si/SiGe heterostructures containing a two-dimensional electron gas. Damage to straight wires fabricated in the heterostructure using plasma etching was characterized both by measuring the width of the nonconductive ''sidewall depletion'' region at the device sidewall and by measuring the noise level factor {gamma}{sub H}/N determined from spectra of the low frequency noise. Observed increases in sidewall depletion width with increasing etch depth are tentatively attributed to the increase in total number of sidewall defects with increased plasma exposure time. Excess negative charge trapped on the feature sidewall could be another contributing factor. Defects at the bottom of etched features appear to contribute minimally. The noise level shows a minimum at an ion bombardment energy of {approx}100 eV, while the sidewall depletion width is independent of bias voltage, within experimental uncertainty. A proposed explanation of the noise trend involves two competing effects as ion energy increases: the increase in damage caused by each bombarding ion and the reduction in total number of incident ions due to shorter etch times.

  1. FTIR and 27 Al MAS NMR analysis of the effect of framework Al-and Si-defects

    E-Print Network [OSTI]

    Sklenak, Stepan

    requirements for produc- tion of polymers are continuously growing and diesel fuel is com- ing more into demand

  2. Hot metal Si control at Kwangyang blast furnaces

    SciTech Connect (OSTI)

    Hur, N.S.; Cho, B.R.; Kim, G.Y.; Choi, J.S.; Kim, B.H. [POSCO, Cheollanamdo (Korea, Republic of). Kwangyang Works

    1995-12-01T23:59:59.000Z

    Studies of Si transfer in blast furnaces have shown that the Si level in pig iron is influenced more by the reaction of silicon oxide gas generation in the raceway than the chemical reaction between hot metal and slag at the drop zone. Specifications require a Si content of pig iron below 0.15% at the Kwangyang Works, but the use of soft coking coal in the blend for coke ovens, high pulverized coal injection rate into the blast furnace, and the application of lower grade iron ore has resulted in the need to develop methods to control Si in hot metal. In this paper, the results of in furnace Si control and the desiliconization skills at the casthouse floor are described.

  3. Mechanistic Selection and Growth of Twinned Bicrystalline Primary Si in Near Eutectic Al-Si Alloys

    SciTech Connect (OSTI)

    Choonho Jung

    2006-12-12T23:59:59.000Z

    Morphological evolution and selection of angular primary silicon is investigated in near-eutectic Al-Si alloys. Angular silicon arrays are grown directionally in a Bridgman furnace at velocities in the regime of 10{sup -3} m/sec and with a temperature gradient of 7.5 x 10{sup 3} K/m. Under these conditions, the primary Si phase grows as an array of twinned bicrystalline dendrites, where the twinning gives rise to a characteristic 8-pointed star-shaped primary morphology. While this primary Si remains largely faceted at the growth front, a complex structure of coherent symmetric twin boundaries enables various adjustment mechanisms which operate to optimize the characteristic spacings within the primary array. In the work presented here, this primary silicon growth morphology is examined in detail. In particular, this thesis describes the investigation of: (1) morphological selection of the twinned bicrystalline primary starshape morphology; (2) primary array behavior, including the lateral propagation of the starshape grains and the associated evolution of a strong <100> texture; (3) the detailed structure of the 8-pointed star-shaped primary morphology, including the twin boundary configuration within the central core; (4) the mechanisms of lateral propagation and spacing adjustment during array evolution; and (5) the thermosolutal conditions (i.e. operating state) at the primary growth front, including composition and phase fraction in the vicinity of the primary tip.

  4. Cooling Power Density of SiGe/Si Superlattice Micro Refrigerators Gehong Zeng, Xiaofeng Fan, Chris LaBounty, Edward Croke2

    E-Print Network [OSTI]

    Bowers, John

    Cooling Power Density of SiGe/Si Superlattice Micro Refrigerators Gehong Zeng, Xiaofeng Fan, Chris Experiments were carried out to determine the cooling power density of SiGe/Si superlattice microcoolers by integrating thin film metal resistor heaters on the cooling surface. By evaluating the maximum cooling

  5. Things to do early in the semester 1. Allow your SI Leader surveys class for the most popular times, schedule SI sessions

    E-Print Network [OSTI]

    Kasman, Alex

    questions on a real exam. This increases student interest in and relevancy of SI rapidly. 17. Attach an SI promotional page (or sticky note) encouraging students to go to SI to student exams1 Things to do early in the semester 1. Allow your SI Leader surveys class for the most popular

  6. Low-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for IIIV Compound Semiconductors-to-Silicon Photonic

    E-Print Network [OSTI]

    Bowers, John

    required temperature for strong covalent bond for- mation and greater diffusion efficiency of gasLow-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for IIIV Compound Semiconductors-temperature process for covalent bonding of thermal SiO2 to plasma-enhanced chemical vapor deposited (PECVD) SiO2

  7. Scale Up of Si/Si0.8GE0.2 and B4C/B9C Superlattices for Harvesting...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Scale Up of SiSi0.8GE0.2 and B4CB9C Superlattices for Harvesting of Waste Heat in Diesel Engines Scale Up of SiSi0.8GE0.2 and B4CB9C Superlattices for Harvesting of Waste Heat...

  8. The role of straining and morphology in thermal conductivity of a set of SiGe superlattices and biomimetic SiGe nanocomposites

    E-Print Network [OSTI]

    Tomar, Vikas

    The role of straining and morphology in thermal conductivity of a set of SiGe superlattices and biomimetic SiGe nanocomposites This article has been downloaded from IOPscience. Please scroll down to see and morphology in thermal conductivity of a set of SiGe superlattices and biomimetic SiGe nanocomposites Vikas

  9. Electromagnetic dissociation of relativistic {sup 28}Si by nucleon emission

    SciTech Connect (OSTI)

    Sonnadara, U.J.

    1992-12-01T23:59:59.000Z

    A detailed study of the electromagnetic dissociation of {sup 28}Si by nucleon emission at E{sub lab}/A = 14.6 (GeV/nucleon was carried out with {sup 28}Si beams interacting on {sup 208}Pb). {sup 120}Sn. {sup 64}C targets. The measurements apparatus consists of detectors in the target area which measure the energy and charged multiplicity, and a forward spectrometer which measures the position, momentum and energy of the reaction fragments. The exclusive electromagnetic dissociation cross sections for decay channels having multiple nucleons in the final state have been measured which enables the selection of events produced in pure electromagnetic interactions. The measured cross sections agree well with previous measurements obtained for the removal of a few nucleons as well as with measurements on total charge removal cross sections from other experiments. The dependence of the integrated cross sections on the target charge Z{sub T} and the target mass AT confirms that for higher Z targets the excitation is largely electromagnetic. Direct measurements of the excitation energy for the electromagnetic dissociation of {sup 28}Si {yields} p+{sup 27}Al and {sup 28}Si {yields} n+{sup 27}Si have been obtained through a calculation of the invariant mass in kinematically, reconstructed events. The excitation energy spectrum for all targets peak near the isovector giant dipole resonance in {sup 28}Si. These distributions are well reproduced by combining the photon spectrum calculated using the Weizsaecker-Williams approximation with the experimental data on the photonuclear {sup 28}Si({sub {gamma},p}){sup 27}Al and {sup 28}Si({sub {gamma},n}){sup 27}Si. The possibilities of observing double giant dipole resonance excitations in {sup 28}Si have been investigated with cross section measurements as well as with excitation energy reconstruction.

  10. Electromagnetic dissociation of relativistic [sup 28]Si by nucleon emission

    SciTech Connect (OSTI)

    Sonnadara, U.J.

    1992-12-01T23:59:59.000Z

    A detailed study of the electromagnetic dissociation of [sup 28]Si by nucleon emission at E[sub lab]/A = 14.6 (GeV/nucleon was carried out with [sup 28]Si beams interacting on [sup 208]Pb). [sup 120]Sn. [sup 64]C targets. The measurements apparatus consists of detectors in the target area which measure the energy and charged multiplicity, and a forward spectrometer which measures the position, momentum and energy of the reaction fragments. The exclusive electromagnetic dissociation cross sections for decay channels having multiple nucleons in the final state have been measured which enables the selection of events produced in pure electromagnetic interactions. The measured cross sections agree well with previous measurements obtained for the removal of a few nucleons as well as with measurements on total charge removal cross sections from other experiments. The dependence of the integrated cross sections on the target charge Z[sub T] and the target mass AT confirms that for higher Z targets the excitation is largely electromagnetic. Direct measurements of the excitation energy for the electromagnetic dissociation of [sup 28]Si [yields] p+[sup 27]Al and [sup 28]Si [yields] n+[sup 27]Si have been obtained through a calculation of the invariant mass in kinematically, reconstructed events. The excitation energy spectrum for all targets peak near the isovector giant dipole resonance in [sup 28]Si. These distributions are well reproduced by combining the photon spectrum calculated using the Weizsaecker-Williams approximation with the experimental data on the photonuclear [sup 28]Si([sub [gamma],p])[sup 27]Al and [sup 28]Si([sub [gamma],n])[sup 27]Si. The possibilities of observing double giant dipole resonance excitations in [sup 28]Si have been investigated with cross section measurements as well as with excitation energy reconstruction.

  11. Resonant tunneling with high peak to valley current ratio in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers at room temperature

    SciTech Connect (OSTI)

    Chen, D. Y., E-mail: cdy7659@126.com [Department of Physics, Nanjing National Laboratory of Microstructures and Key Laboratory of Advanced Photonic and Electronic, materials, Nanjing University, Nanjing 210093 (China); Nanjing University of posts and Telecommunications, Nanjing 210046 (China); Sun, Y.; He, Y. J. [Nanjing University of posts and Telecommunications, Nanjing 210046 (China); Xu, L.; Xu, J. [Department of Physics, Nanjing National Laboratory of Microstructures and Key Laboratory of Advanced Photonic and Electronic, materials, Nanjing University, Nanjing 210093 (China)

    2014-01-28T23:59:59.000Z

    We have investigated carrier transport in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers by room temperature current-voltage measurements. Resonant tunneling signatures accompanied by current peaks are observed. Carrier transport in the multi-layers were analyzed by plots of ln(I/V{sup 2}) as a function of 1/V and ln(I) as a function of V{sup 1/2}. Results suggest that besides films quality, nc-Si and barrier sub-layer thicknesses are important parameters that restrict carrier transport. When thicknesses are both small, direct tunneling dominates carrier transport, resonant tunneling occurs only at certain voltages and multi-resonant tunneling related current peaks can be observed but with peak to valley current ratio (PVCR) values smaller than 1.5. When barrier thickness is increased, trap-related and even high field related tunneling is excited, causing that multi-current peaks cannot be observed clearly, only one current peak with higher PVCR value of 7.7 can be observed. While if the thickness of nc-Si is large enough, quantum confinement is not so strong, a broad current peak with PVCR value as high as 60 can be measured, which may be due to small energy difference between the splitting energy levels in the quantum dots of nc-Si. Size distribution in a wide range may cause un-controllability of the peak voltages.

  12. Corrosion resistant coatings for SiC and Si{sub 3}N{sub 4} ceramics

    SciTech Connect (OSTI)

    Nguyen Thierry; Shaokai Yang; J.J. Brown

    1998-09-01T23:59:59.000Z

    It is the goal of this program to (1) develop coatings for SiC and Si{sub 3}N{sub 4} that will enhance their performance as heat exchangers under coal combustion conditions and (2) to conduct an in-depth evaluation of the cause and severity of ceramic heat exchanger deterioration and failure under coal combustion conditions.

  13. Size Effect of SiC Particle on Microstructures and Mechanical Properties of SiCp/Al Composites

    E-Print Network [OSTI]

    Qin, Qinghua

    Cp/Al composites were fabricated using aluminum alloy ZL101 as the matrix material, and SiC particles respectively. The results show that the SiC particles can distribute uniformly in the aluminum matrix using matrix or reinforced materials [1-5]. They are promising materials for aerospace, automotive, thermal

  14. Focused ion beam micromilling of GaN and related substrate materials ,,sapphire, SiC, and Si...

    E-Print Network [OSTI]

    Steckl, Andrew J.

    Focused ion beam micromilling of GaN and related substrate materials ,,sapphire, SiC, and Si... A. In addition, we report similar results for materials currently utilized as substrates for GaN growth. II-0030 Received 15 October 1998; accepted 18 December 1998 Micromilling of GaN films has been obtained using a Ga

  15. Damage Profiles and Ion Distribution in Pt-irradiated SiC. |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Damage Profiles and Ion Distribution in Pt-irradiated SiC. Damage Profiles and Ion Distribution in Pt-irradiated SiC. Abstract: Single crystalline 6H-SiC samples were irradiated at...

  16. Electronic Origin For The Phase Transition From Amorphous LixSi...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Li15Si4 . Abstract: Silicon has been widely explored as an anode material for lithium ion battery. Upon lithiation, silicon transforms to amorphous LixSi (a-LixSi) via...

  17. Co-doped Anatase TiO Heteroepitaxy on Si(001). | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    beam epitaxy (OPA-MBE) on Si(001) for evaluation as a potential dilute magnetic semiconductor material suitable for Si-based spintronic devices. Epitaxial growth on Si(001)...

  18. Substrate engineering for monolithic integration of III-V semiconductors with Si CMOS technology

    E-Print Network [OSTI]

    Dohrman, Carl Lawrence

    2008-01-01T23:59:59.000Z

    Ge virtual substrates, fabricated using Si1-xGex-.Ge, compositionally graded buffers, enable the epitaxial growth of device-quality GaAs on Si substrates, but monolithic integration of III-V semiconductors with Si CMOS ...

  19. Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer

    E-Print Network [OSTI]

    Isaacson, David M.

    We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle ...

  20. a-si solar cells: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for the development of amorphous Si solar cells Seung May 2010 Keywords: a-Si:H Thin film Si solar cell Spectroscopic ellipsometry (SE) a b s t r a c t We Park, Byungwoo...

  1. a-si solar cell: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for the development of amorphous Si solar cells Seung May 2010 Keywords: a-Si:H Thin film Si solar cell Spectroscopic ellipsometry (SE) a b s t r a c t We Park, Byungwoo...

  2. The origin of strength limiting defects in a toughened SiC (hexology SX-SiC)

    SciTech Connect (OSTI)

    Srinivasan, G.V.; Gibson, J.; Lau, S.K. [Carborundum Company, Niagara Falls, NY (United States)] [and others

    1996-12-31T23:59:59.000Z

    HEXOLOY{reg_sign} SX-SiC, sintered with yttrium, and aluminum containing compounds has higher toughness and strength than {alpha}-SiC, sintered with boron and carbon (HEXOLOY SA-SiC). The room temperature fracture toughness, and strength in uniaxial tension and flexure were determined. The strength limiting defects were identified. The composition of the strength limiting defects were analyzed by elemental mapping with Scanning Auger Electron Microscopy and Secondary Ion Mass Spectrometry. The origination of such defects are discussed. The fracture mirror parameter was determined from analysis of tensile specimens fracture surfaces. The experimentally determined fracture mirror parameter is compared with the predicted value for SX-SiC and {alpha}-SiC. The local stress state at the vicinity of the defects are discussed.

  3. Comparison of majority carrier charge transfer velocities at Si/polymer and Si/metal photovoltaic heterojunctions

    SciTech Connect (OSTI)

    Price, Michelle J.; Foley, Justin M. [Applied Physics Program, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109-1040 (United States); May, Robert A. [Department of Chemistry and Biochemistry, University of Texas at Austin, 1 University Station A5300, Austin, Texas 78712-0165 (United States); Maldonado, Stephen [Applied Physics Program, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109-1040 (United States); Department of Chemistry, University of Michigan, 930 N University, Ann Arbor, Michigan 48109-1055 (United States)

    2010-08-23T23:59:59.000Z

    Two sets of silicon (Si) heterojunctions with either Au or PEDOT:PSS contacts have been prepared to compare interfacial majority carrier charge transfer processes at Si/metal and Si/polymer heterojunctions. Current-voltage (J-V) responses at a range of temperatures, wavelength-dependent internal quantum yields, and steady-state J-V responses under illumination for these devices are reported. The cumulative data suggest that the velocity of majority carrier charge transfer, v{sub n}, is several orders of magnitude smaller at n-Si/PEDOT:PSS contacts than at n-Si/Au junctions, resulting in superior photoresponse characteristics for these inorganic/organic heterojunctions.

  4. Synthesis of 4-substituted-trans-1,2-diaminocyclohexyl polyaminocarboxylate metal chelating agents for the preparation of stable radiometal antibody immunoconjugates for therapy and SPECT and PET imaging

    DOE Patents [OSTI]

    Mease, R.C.; Kolsky, K.L.; Mausner, L.F.; Srivastava, S.C.

    1997-06-03T23:59:59.000Z

    Cyclohexyl chelating agents useful in forming antibody-metal conjugates which are used for diagnostic and therapeutic purposes are synthesized. New compounds and processes of forming these compounds are disclosed including 4-haloacetamido-trans-1,2-diaminocyclohexyl polyaminocarboxylate and 4-isothiocyanato-trans-1,2-diamino cyclohexane-N,N,N{prime},N{prime}-tetra acetic acid.

  5. Synthesis of 4-substituted-trans-1,2-diaminocyclohexyl polyaminocarboxylate metal chelating agents for the preparation of stable radiometal antibody immunoconjugates for therapy and spect and pet imaging

    DOE Patents [OSTI]

    Mease, Ronnie C. (2101 B. Ulster Pl., Coram, NY 11727); Kolsky, Kathryn L. (460 Harrison Ave., Miller Pl., NY 11764); Mausner, Leonard F. (16 Seville Ln., Stony Brook, NY 11790); Srivastava, Suresh C. (8 Penelope Dr., Setauket, NY 11733)

    1997-06-03T23:59:59.000Z

    Cyclohexyl chelating agents useful in forming antibody-metal conjugates useful for diagnostic and therapeutic purposes. New compounds and processes of forming these compounds are disclosed including 4-haloacetamido-trans-1,2-diaminocyclohexyl polyaminocarboxylate and 4-isothiocyanato-trans-1,2-diamino cyclohexane-N, N, N', N'-tetra acetic acid.

  6. Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen* and D. K. Saldin

    E-Print Network [OSTI]

    Saldin, Dilano

    Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen quantitatively the geometry of mixed Ge-Si dimers on a single domain Si 001 2 1 surface by azimuthal scanning core-level photoelectron diffraction. By analyzing Ge 3d diffraction patterns from Ge/Si 001 at 0.1 ML

  7. Comparison of luminescent efficiency of InGaAs quantum well structures grown on Si, GaAs, Ge, and SiGe virtual substrate

    E-Print Network [OSTI]

    , and SiGe virtual substrate V. K. Yang, S. M. Ting, M. E. Groenert, M. T. Bulsara, M. T. Currie, C. W efficiency of InGaAs quantum wells on Si via SiGe interlayers, identical In0.2Ga0.8As quantum well structures metalorganic vapor deposition system. The substrates used include GaAs, Si, Ge, and SiGe virtual substrates

  8. Isothermal nitridation kinetics of TiSi{sub 2} powders

    SciTech Connect (OSTI)

    Roger, J., E-mail: roger@lcts.u-bordeaux1.fr; Maill, L.; Dourges, M.A.

    2014-04-01T23:59:59.000Z

    The aim of the present work is to determine the kinetics of reaction between TiSi{sub 2} powder and gaseous nitrogen. Isothermal nitridation of TiSi{sub 2} powders with fine (1.4 m) and medium (4.5 m) particle size has been studied in pure nitrogen atmosphere from 1000 to 1200 C for duration up to 50 h. The isothermal nitridation kinetics of TiSi{sub 2} powders were investigated by thermogravimetry. The nitridation rate strongly depends on the particle size and temperature. Smaller size particle exhibits higher nitridation rate due to its larger surface area. The conversion process is complex with nucleation and growth of TiN at the surface of the grain and Si{sub 3}N{sub 4} inside the grain promoted by the Kirkendall effect with an influence of the volume increase. - Graphical abstract: Backscattered electrons image of a transverse TiSi{sub 2} grain nitrurated at 1100 C for 50 h. - Highlights: Influence of grain size on TiSi{sub 2} powder nitridation. Influence of temperature on TiSi{sub 2} powder nitridation. Experimental measurements of the nitridation kinetics. An explanation of the nitridation mechanism.

  9. Excess vacancies in high energy ion implanted SiGe

    SciTech Connect (OSTI)

    Koegler, R.; Muecklich, A.; Skorupa, W.; Peeva, A.; Kuznetsov, A. Yu.; Christensen, J. S.; Svensson, B. G. [Forschungszentrum Rossendorf, PF 510119, D-01314 Dresden (Germany); Institute of Solid State Physics BAS, Boulevard Tzarigradsko Chaussee 72, 1784 Sofia (Bulgaria); Deparment of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway)

    2007-02-01T23:59:59.000Z

    Excess vacancies generated by high energy implantation with 1.2 MeV Si{sup +} and 2 MeV Ge{sup +} ions in SiGe were investigated after rapid thermal annealing at 900 degree sign C. Excess vacancies were probed by decoration with Cu and measuring the Cu profile by secondary ion mass spectrometry. Cross section transmission electron microscopy of cleaved specimen enabled to visualize nanocavities resulting from agglomeration of excess vacancies. The ion-induced damage in SiGe increases with increasing Ge fraction of the alloy. The amorphization threshold decreases and the extension of a buried amorphous layer increases for given implantation and annealing conditions. In contrast to ballistic simulations of excess defect generation where perfect local self-annihilation is assumed the concentrations of excess vacancies and excess interstitials in SiGe increase with increasing Ge fraction. The main contribution to the high excess vacancy concentration in SiGe results from the inefficient recombination of vacancies and interstitials. The widely used +1 model describing the ion-induced damage in Si is not valid for SiGe.

  10. Atomic-Level Computer Simulation of SiC: Defect Accumulation...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atomic-Level Computer Simulation of SiC: Defect Accumulation, Mechanical Properties and Defect Recovery. Atomic-Level Computer Simulation of SiC: Defect Accumulation, Mechanical...

  11. Development of an SI DI Ethanol Optimized Flex Fuel Engine Using...

    Broader source: Energy.gov (indexed) [DOE]

    Development of an SI DI Ethanol Optimized Flex Fuel Engine Using Advanced Valvetrain Development of an SI DI Ethanol Optimized Flex Fuel Engine Using Advanced Valvetrain...

  12. Realising wide bandgap P-SiC-emitter lateral heterojunction bipolar transistors with low

    E-Print Network [OSTI]

    Kumar, M. Jagadesh

    semiconductors such as InGaP/GaAs or AlGaAs/GaAs are available, HBTs based on SiC/Si are attractive because

  13. Deep level defects in proton radiated GaAs grown on metamorphic SiGe/Si substrates

    SciTech Connect (OSTI)

    Gonzalez, M.; Andre, C. L.; Walters, R. J.; Messenger, S. R.; Warner, J. H.; Lorentzen, J. R.; Pitera, A. J.; Fitzgerald, E. A.; Ringel, S. A. [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States); U.S. Naval Research Laboratory, Code 6818, Washington, DC 20375 (United States); Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

    2006-08-01T23:59:59.000Z

    The effect of 2 MeV proton radiation on the introduction of deep levels in GaAs grown on compositionally graded SiGe/Si substrates was investigated using deep level transient spectroscopy (DLTS). Systematic comparisons were made with identical layers grown on both GaAs and Ge substrates to directly assess the influence of threading dislocations on radiation-related deep levels for both n-type and p-type GaAs. DLTS revealed that for p{sup +}n structures, proton irradiation generates electron traps at E{sub c}-0.14 eV, E{sub c}-0.25 eV, E{sub c}-0.54 eV, and E{sub c}-0.72 eV in the n-GaAs base, and, for n{sup +}p structures, radiation-induced hole traps appear at E{sub v}+0.18 eV, E{sub v}+0.23 eV, E{sub v}+0.27 eV, and E{sub v}+0.77 eV in the p-type GaAs base, irrespective of substrate choice for both polarities. The primary influence of substituting SiGe/Si substrates for conventional GaAs and Ge substrates is on the introduction rates of the individual traps as a function of proton radiation fluence. Substantially reduced concentrations are found for each radiation-induced hole trap observed in p-type GaAs, as well as for the E{sub c}-0.54 eV trap in n-GaAs for samples on SiGe/Si, as a function of proton fluence. Calculated trap introduction rates reveal reductions by as much as {approx}40% for certain hole traps in p-GaAs grown on SiGe/Si. This increased radiation tolerance for GaAs grown on SiGe/Si is attributed to interactions between the low density ({approx}10{sup 6} cm{sup -2}) of residual dislocations within the metamorphic GaAs/SiGe/Si structure and the radiation-induced point defects. Nevertheless, the fact that the impact of dislocations on radiation tolerance is far more dramatic for n{sup +}p GaAs structures compared to p{sup +}n structures, may have implications on future III-V/Si space solar cell design optimization, since end-of-life versus beginning-of-life differences are critical factors for power profiling in high radiation environments.

  14. Antibody binding to p-Si using LANL SAM chemistry

    SciTech Connect (OSTI)

    Anderson, Aaron S [Los Alamos National Laboratory

    2010-12-06T23:59:59.000Z

    This NMSBA-sponsored project involves the attachment of antibodies to polymeric silicon (p-Si) surfaces, with the ultimate goal of attaching antibodies to nanowires for Vista Therapeutics, Inc. (Santa Fe, NM). This presentation describes the functionalization of p-Si surfaces. the activation of terminal carboxylates on these surfaces, the conjugation of antibodies, and the analyses undertaken at each step. The results of this work show that antibody conjugation is possible on p-Si coatings using the well-known EDC/NHS activation chemistry.

  15. Efficient tunable luminescence of SiGe alloy sheet polymers

    SciTech Connect (OSTI)

    Vogg, G.; Meyer, A. J.-P.; Miesner, C.; Brandt, M. S.; Stutzmann, M.

    2001-06-18T23:59:59.000Z

    Crystalline SiGe alloy sheet polymers were topotactically prepared from epitaxially grown calcium germanosilicide Ca(Si{sub 1{minus}x}Ge{sub x}){sub 2} precursor films in the whole composition range. These polygermanosilynes are found to be a well-defined mixture of the known siloxene and polygermyne sheet polymers with the OH groups exclusively bonded to silicon. The optical properties determined by photoluminescence and optical reflection measurements identify the mixed SiGe sheet polymers as direct semiconductors with efficient luminescence tunable in the energy range between 2.4 and 1.3 eV. {copyright} 2001 American Institute of Physics.

  16. SiGe HBT linear-in-dB high dynamic range RF envelope detectors and wideband high linearity amplifiers

    E-Print Network [OSTI]

    Pan, Hsuan-yu

    2010-01-01T23:59:59.000Z

    1.1 SiGe BiCMOS Technology . . . . . . .A Linear-in-dB SiGe HBT Wideband High Dynamic Range RFpower dissapation trade-off between Si BJTs and SiGe HBTs [

  17. A low thermal impact annealing process for SiO{sub 2}-embedded Si nanocrystals with optimized interface quality

    SciTech Connect (OSTI)

    Hiller, Daniel, E-mail: daniel.hiller@imtek.uni-freiburg.de; Gutsch, Sebastian; Hartel, Andreas M.; Zacharias, Margit [IMTEK, Faculty of Engineering, Albert-Ludwigs-University Freiburg, Georges-Khler-Allee 103, 79110 Freiburg (Germany); Lper, Philipp [Fraunhofer ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Gebel, Thoralf [DTF Technology GmbH, Am Promigberg 16, 01108 Dresden (Germany)

    2014-04-07T23:59:59.000Z

    Silicon nanocrystals (Si NCs) for 3rd generation photovoltaics or optoelectronic applications can be produced by several industrially compatible physical or chemical vapor deposition technologies. A major obstacle for the integration into a fabrication process is the typical annealing to form and crystallize these Si quantum dots (QDs) which involves temperatures ?1100??C for 1?h. This standard annealing procedure allows for interface qualities that correspond to more than 95% dangling bond defect free Si NCs. We study the possibilities to use rapid thermal annealing (RTA) and flash lamp annealing to crystallize the Si QDs within seconds or milliseconds at high temperatures. The Si NC interface of such samples exhibits huge dangling bond defect densities which makes them inapplicable for photovoltaics or optoelectronics. However, if the RTA high temperature annealing is combined with a medium temperature inert gas post-annealing and a H{sub 2} passivation, luminescent Si NC fractions of up to 90% can be achieved with a significantly reduced thermal load. A new figure or merit, the relative dopant diffusion length, is introduced as a measure for the impact of a Si NC annealing procedure on doping profiles of device structures.

  18. Endotaxially stabilized B2-FeSi nanodots in Si (100) via ion beam co-sputtering

    SciTech Connect (OSTI)

    Cassidy, Cathal, E-mail: c.cassidy@oist.jp; Singh, Vidyadhar; Grammatikopoulos, Panagiotis [Nanoparticles by Design Unit, Okinawa Institute of Science and Technology (OIST) Graduate University, 1919-1 Onna-Son, Okinawa 904-0495 (Japan); Kioseoglou, Joseph [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Lal, Chhagan [Department of Physics, University of Rajasthan, Jaipur, Rajasthan 302005 (India); Sowwan, Mukhles, E-mail: mukhles@oist.jp [Nanoparticles by Design Unit, Okinawa Institute of Science and Technology (OIST) Graduate University, 1919-1 Onna-Son, Okinawa 904-0495 (Japan); Nanotechnology Research Laboratory, Al-Quds University, East Jerusalem, P.O. Box 51000, Palestine (Country Unknown)

    2014-04-21T23:59:59.000Z

    We report on the formation of embedded B2-FeSi nanodots in [100]-oriented Si substrates, and investigate the crystallographic mechanism underlying the stabilization of this uncommon, bulk-unstable, phase. The nanodots were approximately 10?nm in size, and were formed by iron thin film deposition and subsequent annealing. Cross-sectional transmission electron microscopy, energy loss spectroscopy mapping, and quantitative image simulation and analysis were utilized to identify the phase, strain, and orientational relationship of the nanodots to the host silicon lattice. X-ray photoelectron spectroscopy was utilized to analyze the surface composition and local bonding. Elasticity calculations yielded a nanodot residual strain value of ?18%. Geometrical phase analysis graphically pinpointed the positions of misfit dislocations, and clearly showed the presence of pinned (11{sup }1{sup }){sub Si}//(100){sub FeSi}, and unpinned (2{sup }42){sub Si}//(010){sub FeSi}, interfaces. This partial endotaxy in the host silicon lattice was the mechanism that stabilized the B2-FeSi phase.

  19. Materials Science & Metallurgy Master of Philosophy, Materials Modelling, More information on http://www.msm.cam.ac.uk/phase-trans/2005/ODS.html

    E-Print Network [OSTI]

    Cambridge, University of

    ://www.msm.cam.ac.uk/phase-trans/2005/ODS.html Course MP4, Thermodynamics and Phase Diagrams, H. K. D. H. Bhadeshia Lecture 4 in the iron and chromium concentrations in fifty atom blocks, of the ferrite in MA956. There are real

  20. IEEE TRANS. AUDIO, SPEECH AND LANGUAGE PROCESSING, VOL. XX, NO. Y, MONTH 2010 1 AR-GARCH in Presence of Noise: Parameter

    E-Print Network [OSTI]

    Cohen, Israel

    IEEE TRANS. AUDIO, SPEECH AND LANGUAGE PROCESSING, VOL. XX, NO. Y, MONTH 2010 1 AR-GARCH (VAD) based on the autoregressive-generalized autore- gressive conditional heteroscedasticity (AR-GARCH) model. The speech signal is modeled as an AR-GARCH process in the time domain, and the likelihood ratio

  1. [177Lu]-Labeled [(R)-2-amino-3-(4-isothiocyanatophenyl)propyl]-trans-(S,S)-cyclohexane-1,2-diamine-pentaacetic acid (CHX-A-

    E-Print Network [OSTI]

    Levin, Judith G.

    [177Lu]-Labeled [(R)-2-amino-3-(4-isothiocyanatophenyl)propyl]- trans-(S,S)-cyclohexane-1,2-diamine Information, NLM, NIH, Bethesda, MD 20894 Chemical name: [177Lu]-Labeled [(R)-2-amino-3 III (EGFRvIII) [ [177Lu]CHX-A''-DTPA-L8A4] Arvind Chopra, PhD National Center for Biotechnology

  2. Corrosion Mechanisms of Mild Steel in Aqueous CO2 SolutionsThu Tran Institute for Corrosion and Multiphase Technology, Ohio University

    E-Print Network [OSTI]

    Botte, Gerardine G.

    Corrosion Mechanisms of Mild Steel in Aqueous CO2 SolutionsThu Tran Institute for Corrosion," Corrosion Science 41, (1999): pp. 117-139. [2] E. Remita, B. Tribollet, E. Sutter, V. Vivier, F. Ropital contribution of the buffering effect," Corrosion Science 50, (2008): pp. 1433-1440. [3] C. DeWaard and D

  3. Accepted for publication at IEEE Trans. Power Systems, July 2000, paper No. PE-006PRS (08-2000). Time Dependence of Controls to Avoid Voltage Collapse

    E-Print Network [OSTI]

    Caizares, Claudio A.

    system model. Keywords: Power system control, voltage stability, voltage collapse, reactive power1 Accepted for publication at IEEE Trans. Power Systems, July 2000, paper No. PE-006PRS (08 is first presented with the help of a simple test system. The time dependence of the control actions

  4. Park, Bland, Hero, and Meyer, Submission to IEEE Trans. on Medical Imaging 1 Title: Target Selection Method in Atlas Construction based on Multidimensional Scaling

    E-Print Network [OSTI]

    Hero, Alfred O.

    Park, Bland, Hero, and Meyer, Submission to IEEE Trans. on Medical Imaging 1 Title: Target. Bland, Alfred O. Hero III, and Charles R. Meyer Abstract: Probabilistic atlases provide pivotal to: Charles R. Meyer Department of Radiology, #3307 Kresge III University of Michigan, Ann Arbor, MI

  5. Electron diffraction study of 1M illites with interstratified trans- and cis-vacant 2 : 1 layers

    SciTech Connect (OSTI)

    Zhukhlistov, A. P., E-mail: anzhu@igem.ru; Vikent'ev, I. V.; Rusinova, O. V. [Russian Academy of Sciences, Institute of Geology of Ore Deposits, Petrography, Mineralogy, and Geochemistry (Russian Federation)

    2012-03-15T23:59:59.000Z

    Illites from the volcanogenic Zn-Au-Ag sulfide deposit Galkinskoe (Northern Urals) have been investigated using oblique-texture electron diffraction patterns in combination with the simulation of diffraction effects. Along with single-phase tv/cv1M illites, the structures of which are formed by statistically interstratified dioctahedral 2: 1 layers with vacant trans- or cis-octahedra, illites in the form of a mixture of two interstratified tv/cv1M phases, with the dominance of tv- or cv layers, are identified. It is shown that in the latter case the diffraction pattern can also be interpreted within the single-phase tv/cv model, provided that the tv- and cv layers are distributed with some tendency to segregate. The structural features indicating the preference of the two-phase model are analyzed.

  6. Axial SiGe Heteronanowire Tunneling Field-Effect Transistors...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    tunneling field-effect transistors (TFETs), where on-state tunneling occurs in the Ge drain section, while off-state leakage is dominated by the Si junction in the source. Our...

  7. Photovoltaic nanocrystal scintillators hybridized on Si solar cells

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Photovoltaic nanocrystal scintillators hybridized on Si solar cells for enhanced conversion@bilkent.edu.tr Abstract: We propose and demonstrate semiconductor nanocrystal based photovoltaic scintillators integrated on solar cells to enhance photovoltaic device parameters including spectral responsivity, open circuit

  8. Si Industry at a Crossroads: New Materials or New Factories?

    E-Print Network [OSTI]

    Fitzgerald, Eugene A.

    Many trends in the silicon industry could be interpreted as the herald of the end of traditional Si scaling. If this premise holds, future performance and system-on-chip applications may not be reached with conventional ...

  9. Intracellular Delivery of siRNA by Polycationic Superparamagnetic Nanoparticles

    E-Print Network [OSTI]

    Castillo, Betzaida

    2012-01-01T23:59:59.000Z

    The siRNA transfection efficiency of nanoparticles (NPs), composed of a superparamagnetic iron oxide core modified with polycationic polymers (poly(hexamethylene biguanide) or branched polyethyleneimine), were studied in ...

  10. Epitaxial growth of rare-earth silicides on (111) Si

    SciTech Connect (OSTI)

    Knapp, J.A.; Picraux, S.T.

    1986-02-17T23:59:59.000Z

    Rapid heating with an electron beam has been used to react overlayers of rare-earth (RE) metals with (111) Si, forming epitaxial layers of silicides of Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. Under conventional furnace annealing, forming such silicides on Si typically leads to rough, pitted surfaces. The use of fast beam heating not only results in a much smoother surface topology but also helps promote epitaxial growth on (111) Si in both solid and liquid phase reactions. These epitaxial silicides have a hexagonal RESi/sub approximately1.7/ structure (defected AlB/sub 2/ type). Their orientation with the Si substrate is (0001)parallel(111), with predicted lattice mismatches ranging from +0.83 to -2.55%.

  11. Crystallization from high temperature solutions of Si in copper

    DOE Patents [OSTI]

    Ciszek, Theodore F. (Evergreen, CO)

    1994-01-01T23:59:59.000Z

    A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 5X10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution melt of Si in Cu at about 16% to about 90% wt. Si at a temperature range of about 800.degree. C. to about 1400.degree. C. in an inert gas; immersing a substrate in the saturated solution melt; supersaturating the solution by lowering the temperature of the saturated solution melt and holding the substrate immersed in the solution melt for a period of time sufficient to cause growing Si to precipitate out of the solution to form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.

  12. Ge-on-Si laser for silicon photonics

    E-Print Network [OSTI]

    Camacho-Aguilera, Rodolfo Ernesto

    2013-01-01T23:59:59.000Z

    Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (Ge ...

  13. Excess carrier lifetimes in Ge layers on Si

    SciTech Connect (OSTI)

    Geiger, R., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch; Sigg, H., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Frigerio, J.; Chrastina, D.; Isella, G. [L-NESS, Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Sess, M. J. [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Scientific Center for Optical and Electron Microscopy (SCOPEM), ETH Zurich, 8093 Zurich (Switzerland); Spolenak, R. [Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Faist, J. [Institute for Quantum Electronics, ETH Zurich, 8093 Zurich (Switzerland)

    2014-02-10T23:59:59.000Z

    The excess charge carrier lifetimes in Ge layers grown on Si or germanium-on-insulator are measured by synchrotron based pump-probe transmission spectroscopy. We observe that the lifetimes do not strongly depend on growth parameters and annealing procedure, but on the doping profile. The defect layer at the Ge/Si interface is found to be the main non-radiative recombination channel. Therefore, the longest lifetimes in Ge/Si (2.6?ns) are achieved in sufficiently thick Ge layers with a built-in field, which repels electrons from the Ge/Si interface. Longer lifetimes (5.3?ns) are obtained in overgrown germanium-on-insulator due to the absence of the defective interface.

  14. al si ca: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bi2Se3 thin films Palevski, Alexander 80 MRS spring meeting San Francisco, April 5-9, 1999, paper Y5.21 DIELECTRIC FUNCTION OF AlN GROWN ON Si (111) BY MBE Physics Websites...

  15. atomistic si etching: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    low pressure, high plasma density etching reactors in which re- active Kushner, Mark 26 Synthesis of Graphene on 6H-SiC (0001) Using Halogen Based Plasma Etching. Open Access...

  16. SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication

    E-Print Network [OSTI]

    Cheng, Zhiyuan

    In this work, we have developed two different fabrication processes for relaxed Si??xGex-on-insulator (SGOI) substrates: (1) SGOI fabrication by etch-back approach, and (2) by "smart-cut" approach utilizing ...

  17. additive si source: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    x 12,000 or 32,000 km is comparable Stechmann, Samuel N. 45 Polycrystalline silicon thin-film transistor with self-aligned SiGe raised sourcedrain Materials Science Websites...

  18. Oxidation of Polymer-derived SiAICN Ceramics. | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    decrease in oxidation rate. Citation: Wang Y, L An, Y Fan, L Zhang, SD Burton, and Z Gan.2005."Oxidation of Polymer-derived SiAICN Ceramics."Journal of the American Ceramic...

  19. Impact of SiC Power Electronic Devices for Hybrid Electric Vehicles Leon M. Tolbert1,2

    E-Print Network [OSTI]

    Tolbert, Leon M.

    02FCC-37 Impact of SiC Power Electronic Devices for Hybrid Electric Vehicles Leon M. Tolbert1 properties of silicon carbide (SiC) power electronic devices compared with silicon (Si) are expected to have characteristics of Si and SiC are used to develop a simulation model for SiC power electronics devices. The main

  20. Magnetoresistivity in a tilted magnetic field in p-Si/SiGe/Si heterostructures with an anisotropic g-factor. Part II

    SciTech Connect (OSTI)

    Drichko, I. L.; Smirnov, I. Yu., E-mail: ivan.smirnov@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Suslov, A. V. [National High Magnetic Field Laboratory (United States); Mironov, O. A. [University of Warwick Science Park, Warwick SEMINANO R and D Centre (United Kingdom); Leadley, D. R. [University of Warwick, Department of Physics (United Kingdom)

    2012-09-15T23:59:59.000Z

    The magnetoresistance components {rho}xx and {rho}xy are measured in two p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of the temperature, field, and tilt angle. Activation energy measurements demonstrate the existence of a ferromagnetic-paramagnetic (F-P) transition for the sample with the hole density p = 2 Multiplication-Sign 10{sup 11} cm{sup -2}. This transition is due to the crossing of the 0{up_arrow} and 1{down_arrow} Landau levels. However, in another sample with p = 7.2 Multiplication-Sign 10{sup 10} cm{sup -2}, the 0{up_arrow} and 1{down_arrow} Landau levels coincide for angles {theta} = 0-70 Degree-Sign . Only for {theta} > 70 Degree-Sign do the levels start to diverge which, in turn, results in the energy gap opening.

  1. Thermal decomposition of silane to form hydrogenated amorphous Si film

    DOE Patents [OSTI]

    Strongin, Myron (Center Moriches, NY); Ghosh, Arup K. (Rocky Point, NY); Wiesmann, Harold J. (Wantagh, NY); Rock, Edward B. (Oxford, GB); Lutz, III, Harry A. (Midlothian, VA)

    1980-01-01T23:59:59.000Z

    This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.

  2. Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure

    SciTech Connect (OSTI)

    Drichko, I. L.; Diakonov, A. M.; Lebedeva, E. V.; Smirnov, I. Yu. [A. F. Ioffe Physico-Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Mironov, O. A. [Warwick SEMINANO R and D Centre, University of Warwick Science Park, Coventry CV4 7EZ (United Kingdom); Kummer, M.; Kaenel, H. von [Laboratorium fuer Festkoerperphysik ETH Zuerich, CH-8093 Zuerich (Switzerland); EpiSpeed SA, Technoparkstrasse 1, CH-8005 Zuerich (Switzerland)

    2009-11-01T23:59:59.000Z

    Measurement results of the acoustoelectric effects [surface acoustic waves (SAW) attenuation and velocity] in a high-mobility p-SiGe/Ge/SiGe structure are presented. The structure was low-energy plasma-enhanced chemical vapor deposition grown with a two-dimensional (2D) channel buried in the strained Ge layer. The measurements were performed as a function of temperature (1.5-4.2 K) and magnetic field (up to 8.4 T) at different SAW intensities at frequencies 28 and 87 MHz. Shubnikov-de Haas-like oscillations of both SAW attenuation and the velocity change have been observed. Hole density and mobility, effective mass, quantum and transport relaxation times, as well as the Dingle temperature were measured with a method free of electric contacts. The effect of heating of the 2D hole gas by the electric field of the SAW was investigated. Energy relaxation time tau{sub e}psilon and the deformation potential constant determined.

  3. Strain relaxation of metastable SiGe/Si: Investigation with two complementary X-ray techniques

    SciTech Connect (OSTI)

    Kasper, E.; Werner, J.; Oehme, M.; Lyutovich, K. [Institut fuer Halbleitertechnik, Universitaet Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart (Germany); Burle, N.; Escoubas, S. [IM2NP - CNRS 6242, Aix Marseille University, Campus St Jerome, 13397 Marseille cedex 20 (France)

    2012-03-15T23:59:59.000Z

    Metastable and strain relaxed SiGe layers with about 20% Ge content have been grown by molecular beam epitaxy on Si substrates at 550 deg. C. The thickness regime of metastability and the onset of strain relaxation were investigated on dust particle free surfaces obtained by careful chemical cleaning and epitaxy loading under clean room conditions. Compared to earlier results true metastable regime without misfit dislocations was obtained up to 140 nm thickness. The onset of strain relaxation started with heterogeneous nucleation sites of misfit dislocations. X-ray topography proved to be a unique monitoring tool to observe a low density of single dislocations. From these results we suggested to define a critical thickness band with lower bound t{sub cl} from dislocation nucleation to an upper bound t{sub co} (600 nm in our case) defined by the onset of considerable strain relaxation. The strain relief was measured by X-ray diffraction (reciprocal space mapping) and found to be very abrupt (76% strain relaxation at 800 nm thickness).

  4. Reflection high-energy electron diffraction evaluation of thermal deoxidation of chemically cleaned Si, SiGe, and Ge layers for solid-source molecular beam epitaxy

    SciTech Connect (OSTI)

    Ali, Dyan; Richardson, Christopher J. K. [Laboratory for Physical Sciences, University of Maryland, College Park, Maryland 20740 (United States)

    2012-11-15T23:59:59.000Z

    The authors present a study on the thermal evolution of the reflection high-energy electron diffraction pattern of chemically cleaned (001)-oriented Si, Ge, and SiGe surfaces, associating observed changes in the reconstructions with the desorption of known residual contaminants for Si and Ge surfaces. The implications of residual oxides prior to epitaxy on stacking fault densities in the grown films are presented. Further evidence for the two-phase nature of oxides on SiGe surfaces is provided, demonstrating that it is necessary to heat a SiGe surface up to the thermal deoxidation temperature of a Si surface to obtain stacking fault-free growth.

  5. Testing the clump model of SiO maser emission

    E-Print Network [OSTI]

    M. D. Gray; R. J. Ivison; E. M. L. Humphreys; J. A. Yates

    1997-12-08T23:59:59.000Z

    Building on the detection of J=7-6 SiO maser emission in both the v=1 and v=2 vibrational states towards the symbiotic Mira, R Aquarii, we have used the James Clerk Maxwell Telescope to study the changes in the SiO maser features from R Aqr over a stellar pulsational period. The observations, complemented by contemporaneous data taken at 86 GHz, represent a test of the popular thermal-instability clump models of SiO masers. The `clump' model of SiO maser emission considers the SiO masers to be discrete emitting regions which differ from their surroundings in the values of one or more physical variables (SiO abundance, for example). We find that our observational data are consistent with a clump model in which the appearance of maser emission in the J=7-6 transitions coincides with an outward-moving shock impinging on the inner edge of the maser zone.

  6. Comptes Rendus des JNC 17 -Poitiers 2011 Modlisation des proprits mcaniques de tubes composites tresss SiCf/SiC

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    Cf/SiC tresss comme matriau de gainage pour son concept SFR (Sodium Fast Reactor). Le travail prsent ici s and optimize uranium stocks, the CEA is designing the IVth generation of fission reactors. In this way

  7. European PVSECE Glasgow, Scotland 2000 III-V SPACE SOLAR CELLS ON Si SUBSTRATES USING GRADED GeSi BUFFERS

    E-Print Network [OSTI]

    As directly grown on Si, rendering the GaAs useless as a photovoltaic material. Nevertheless, many groups have, this dislocation density has still limited the minority carrier lifetimes obtained to ~ 1-3 ns, even after hydrogen

  8. Nucleation Mechanism of 6H-SiC Polytype Inclusions Inside 15R-SiC Crystals

    SciTech Connect (OSTI)

    Zhang, Y.; Zhang, L.; Chen, H.; Choi, G.; Raghothamachar, B.; Dudley, M.; Edgar, J.H.; Grasza, K.; Tymicki, E.; Su, D.; Zhu, Y.

    2010-06-01T23:59:59.000Z

    A model is presented for the nucleation mechanism of 6H-SiC polytype inclusions inside 15R-SiC boules. Inhomogeneous densities of screw dislocations lead to uneven growth rates, resulting in complex step overgrowth processes which can partially suppress the Burgers vector of a 15R 1c screw dislocation through the creation of Frank faults and Frank partial dislocations. Combined with stacking shifts induced by the passage of basal plane partial dislocations, it is shown that the partial Burgers vector suppression can leave behind a residual 6H 1c dislocation, which then acts as a nucleus for reproduction of 6H-SiC structure in the 15R-SiC crystal.

  9. The chemistry of Si{sub 3}N{sub 4} and Si deposition studied using molecular beam techniques

    SciTech Connect (OSTI)

    Buss, R.J.; Ho, P.; Breiland, W.G.

    1992-08-01T23:59:59.000Z

    Molecular beam techniques can be used to obtain valuable kinetic information for the chemistry of high temperature deposition processes. Molecular beam measurements of Si{sub 3}N{sub 4} deposited from SiF{sub 4} and NH{sub 3} have shown that the CVD reactor chemistry is dominated by surface reactions of the starting gases. Using a beam of heated silane, it is shown that the translational and internal energy of the gas does not influence its surface reactivity in silicon CVD. The IRIS (Imaging of Radicals Interacting with Surfaces) technique for measuring the surface reactivity of radicals during deposition is also discussed with examples (SiH, SiO and NH). 5 refs., 4 figs.

  10. The chemistry of Si sub 3 N sub 4 and Si deposition studied using molecular beam techniques

    SciTech Connect (OSTI)

    Buss, R.J.; Ho, P.; Breiland, W.G.

    1992-01-01T23:59:59.000Z

    Molecular beam techniques can be used to obtain valuable kinetic information for the chemistry of high temperature deposition processes. Molecular beam measurements of Si{sub 3}N{sub 4} deposited from SiF{sub 4} and NH{sub 3} have shown that the CVD reactor chemistry is dominated by surface reactions of the starting gases. Using a beam of heated silane, it is shown that the translational and internal energy of the gas does not influence its surface reactivity in silicon CVD. The IRIS (Imaging of Radicals Interacting with Surfaces) technique for measuring the surface reactivity of radicals during deposition is also discussed with examples (SiH, SiO and NH). 5 refs., 4 figs.

  11. Posting type Advisory Subject S interference in XRF determination of Si

    E-Print Network [OSTI]

    Fischer, Emily V.

    Posting type Advisory Subject S interference in XRF determination of Si Module/Species A/ Si Sites information The primary XRF peak for sulfur has a shoulder that overlaps the primary XRF peak for silicon. XRF spectra for two samples with differing S/Si ratios. Accurate determination of Si is difficult when

  12. Strain Relaxation of SiGe on Compliant BPSG and Its Applications

    E-Print Network [OSTI]

    Strain Relaxation of SiGe on Compliant BPSG and Its Applications Haizhou Yin A DISSERTATION of SiGe on compliant borophosphosilicate glass (BPSG). Through modeling and experiments it has been shown that strain relaxation in the SiGe film can be induced by lateral expansion and buckling of the SiGe

  13. SiGe virtual substrate HMOS transistor for analogue applications K. Michelakisa,*

    E-Print Network [OSTI]

    Papavassiliou, Christos

    SiGe virtual substrate HMOS transistor for analogue applications K. Michelakisa,* , S Abstract Silicongermanium (SiGe) heterojunction metal-oxide-semiconductor field-effect transistors (SiGe design. The results suggest that the realisation of buried-channel SiGe n-HMOSFETs is feasible in MOS

  14. Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs

    E-Print Network [OSTI]

    Piner, Edwin L.

    The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate ...

  15. Last Updated: July 12, 2011 1 iSiS Browser Troubleshooting Tips

    E-Print Network [OSTI]

    Massachusetts at Lowell, University of

    Last Updated: July 12, 2011 1 iSiS Browser Troubleshooting Tips Web browsers retain information to help speed up the process of loading pages and using iSiS. Unfortunately, during times that there are iSiS software changes, the browsers need to be cleaned to ensure iSiS operates correctly. Here are some

  16. Structural and optical properties of size controlled Si nanocrystals in Si{sub 3}N{sub 4} matrix: The nature of photoluminescence peak shift

    SciTech Connect (OSTI)

    Zelenina, A., E-mail: anastasia.zelenina@imtek.uni-freiburg.de; Hiller, D.; Gutsch, S.; Zacharias, M. [Faculty of Engineering, IMTEK, Albert-Ludwigs-University Freiburg, Georges-Khler-Allee 103, 79110 Freiburg (Germany); Dyakov, S. A. [Department of Electronic and Electrical Engineering, Trinity College Dublin, Dublin 2 (Ireland); Optics and Photonics, School of Information and Communication Technology, Royal Institute of Technology (KTH), Electrum 229, Kista SE-16440 (Sweden); Trouillet, V.; Bruns, M. [Institute for Applied Materials (IAM) and Karlsruhe Nano Micro Facility, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Mirabella, S. [MATIS IMM-CNR, Universita' di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Lper, P. [Fraunhofer-Institut fr Solare Energiesysteme ISE Heidenhofstr. 2, 79110 Freiburg (Germany); Lpez-Conesa, L.; Lpez-Vidrier, J.; Peir, F.; Garrido, B. [MIND-IN2UB, Departament dElectrnica, Universitat de Barcelona, C/Mart i Franqus, 1, 08028 Barcelona (Spain); Estrad, S. [MIND-IN2UB, Departament dElectrnica, Universitat de Barcelona, C/Mart i Franqus, 1, 08028 Barcelona (Spain); CCiT, Scientific and Technical Centers, Universitat de Barcelona, C/Llus Sol i Sabaris 1, 08028 Barcelona (Spain); and others

    2013-11-14T23:59:59.000Z

    Superlattices of Si{sub 3}N{sub 4} and Si-rich silicon nitride thin layers with varying thickness were prepared by plasma enhanced chemical vapor deposition. After high temperature annealing, Si nanocrystals were formed in the former Si-rich nitride layers. The control of the Si quantum dots size via the SiN{sub x} layer thickness was confirmed by transmission electron microscopy. The size of the nanocrystals was well in agreement with the former thickness of the respective Si-rich silicon nitride layers. In addition X-ray diffraction evidenced that the Si quantum dots are crystalline whereas the Si{sub 3}N{sub 4} matrix remains amorphous even after annealing at 1200?C. Despite the proven Si nanocrystals formation with controlled sizes, the photoluminescence was 2 orders of magnitude weaker than for Si nanocrystals in SiO{sub 2} matrix. Also, a systematic peak shift was not found. The SiN{sub x}/Si{sub 3}N{sub 4} superlattices showed photoluminescence peak positions in the range of 540660?nm (2.31.9?eV), thus quite similar to the bulk Si{sub 3}N{sub 4} film having peak position at 577?nm (2.15?eV). These rather weak shifts and scattering around the position observed for stoichiometric Si{sub 3}N{sub 4} are not in agreement with quantum confinement theory. Therefore theoretical calculations coupled with the experimental results of different barrier thicknesses were performed. As a result the commonly observed photoluminescence red shift, which was previously often attributed to quantum-confinement effect for silicon nanocrystals, was well described by the interference effect of Si{sub 3}N{sub 4} surrounding matrix luminescence.

  17. Structural and optical properties of {beta}-FeSi{sub 2}/Si(100) prepared by laser ablation method

    SciTech Connect (OSTI)

    Kakemoto, H.; Makita, Y.; Obara, A.; Tsai, Y.; Sakuragi, S.; Ando, S.; Tsukamoto, T.

    1997-07-01T23:59:59.000Z

    {beta}-FeSi{sub 2} is a promising material for the application of various electronic, optoelectronic and energy devices. The authors present here the semiconducting properties of {beta}-FeSi{sub 2} films on Si(100) substrate prepared by laser ablation method. Samples were grown using poly-crystalline bulk {beta}-FeSi{sub 2} prepared by horizontal gradient freeze method. For the monitoring of growth, in-situ observation of ablation plume was made through fluorescence spectroscopy. Reflection of high-energy electron beam diffraction (RHEED) was also made in-situ to see the surface morphology. Characterization of the films by X-ray diffraction presented purely {beta}(220) orientation. Raman scattering measurements at room temperature also indicated that the grown films are semiconducting {beta}-FeSi{sub 2}. Optical absorption spectra at room temperature showed absorption coefficient higher than 10{sup 5} cm{sup {minus}1} above the band-gap ({approximately}1.2 eV). It was revealed that high quality semiconducting {beta}-FeSi{sub 2} films can be fabricated by laser ablation method without post-annealing.

  18. Hydrogen intercalation of single and multiple layer graphene synthesized on Si-terminated SiC(0001) surface

    SciTech Connect (OSTI)

    So?tys, Jakub; Piechota, Jacek; Ptasinska, Maria [Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawi?skiego 5a, 02-106 Warsaw (Poland); Krukowski, Stanis?aw, E-mail: stach@unipress.waw.pl [Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawi?skiego 5a, 02-106 Warsaw (Poland); Institute of High Pressure Physics, Polish Academy of Sciences, Soko?owska 29/37, 01-142 Warsaw (Poland)

    2014-08-28T23:59:59.000Z

    Ab initio density functional theory simulations were used to investigate the influence of hydrogen intercalation on the electronic properties of single and multiple graphene layers deposited on the SiC(0001) surface (Si-face). It is shown that single carbon layer, known as a buffer layer, covalently bound to the SiC substrate, is liberated after hydrogen intercalation, showing characteristic Dirac cones in the band structure. This is in agreement with the results of angle resolved photoelectron spectroscopy measurements of hydrogen intercalation of SiC-graphene samples. In contrast to that hydrogen intercalation has limited impact on the multiple sheet graphene, deposited on Si-terminated SiC surface. The covalently bound buffer layer is liberated attaining its graphene like structure and dispersion relation typical for multilayer graphene. Nevertheless, before and after intercalation, the four layer graphene preserved the following dispersion relations in the vicinity of K point: linear for (AAAA) stacking, direct parabolic for Bernal (ABAB) stacking and wizard hat parabolic for rhombohedral (ABCA) stacking.

  19. Effect of mixed Ge/Si cross-linking on the physical properties of amorphous Ge-Si-Te networks

    SciTech Connect (OSTI)

    Gunasekera, K.; Boolchand, P. [School of Electronics and Computing Systems, College of Engineering and Applied Science, University of Cincinnati, Cincinnati, Ohio 45221-0030 (United States); Micoulaut, M., E-mail: mmi@lptl.jussieu.fr [Laboratoire de Physique Thorique de la Matire Condense, Universit Pierre et Marie Curie, 4 Place Jussieu, F-75252 Paris Cedex 05 (France)

    2014-04-28T23:59:59.000Z

    Amorphous Ge{sub x}Si{sub x}Te{sub 1?2x} glasses are studied as a function of composition by a combination of experimental and theoretical methods, allowing for a full description of the network structure in relationship with physico-chemical properties. Calorimetric and thermal measurements reveal that such glasses display an anomalous behavior across a range of compositions x{sub c1}=7.5% and Si) are increased. The structural manifestation of these anomalies is understood from ?{sup 119}Sn Mssbauer spectroscopy and First Principles Molecular Dynamics at selected compositions (Ge{sub 20}Te{sub 80}, Si{sub 20}Te{sub 80}, and Ge{sub 10}Si{sub 10}Te{sub 80}). The numerical models reveal the quite different roles played by the modifier or network cross-linker Ge or Si atoms, Si being more tetrahedral in sp{sup 3} geometry, whereas Mssbauer spectroscopy shows that the nature of chemical bonding is dramatically changed around x??8%. The precise evolution of the local structure and chemical bonding ultimately allows understanding the origin of the intermediate phase in these complex tellurides.

  20. VOLUME 84, NUMBER 5 P H Y S I C A L R E V I E W L E T T E R S 31 JANUARY 2000 Bonding Arrangements at the Si-SiO2 and SiC-SiO2 Interfaces and a Possible Origin

    E-Print Network [OSTI]

    Pantelides, Sokrates T.

    ) interfaces generally have lower energy because of the surface geometry and the softness of the Si-O-Si angle of point defects [1]. As scaling laws are pushing the technology to ultrathin SiO2 layers, understanding with a wider band gap is preferred. SiC, whose native oxide is also SiO2, is one of the options, but efforts

  1. MECHANICS OF RELAXING SiGe ISLANDS ON A VISCOUS GLASS , J. Liang1

    E-Print Network [OSTI]

    Suo, Zhigang

    MECHANICS OF RELAXING SiGe ISLANDS ON A VISCOUS GLASS R. Huang1 , H. Yin2 , J. Liang1 , J.C. Sturm2, a SiGe thin film, a glass layer, and a Si wafer. The SiGe film is a perfect crystal, and is under biaxial compression. Pattern the SiGe film into islands. On annealing, the glass flows and the islands

  2. 6522 J. Am. Chem. SOC.1986, 108, 6522-6529 Photoelectron Spectroscopy of SiH3-and SiD3-

    E-Print Network [OSTI]

    Ellison, Barney

    - is found to be 94.5' while the value for the radical, SiH,, is 112.5'. Using the gas-phaseacidity of SiH4 questions about these early SiH3assignments. The chem- istry of silanes (and SiH, itself) in a fast flow reactor has been summarizedz6and a recent review of the photochemistry of silanes (1) Gaspar, P. P

  3. La France et l'Iran, des nations si lointaines et si proches 197 La France et l'Iran, des nations

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    La France et l'Iran, des nations si lointaines et si proches 197 La France et l'Iran, des nations si lointaines et si proches Le recteur Gérard-François DUMONT* La France et l'Iran apparaissent comme'autre. Pour les Français, comme sans doute pour les autres Européens, penser ce pays asiatique qu'est l'Iran

  4. Last Updated: July 6, 2011 1 iSiS Adding iSiS as a Trusted Site (Internet Explorer)

    E-Print Network [OSTI]

    Massachusetts at Lowell, University of

    Last Updated: July 6, 2011 1 iSiS Adding iSiS as a Trusted Site (Internet Explorer) Steps is unchecked. 8. Insert the iSiS domain in the "Add this Web site to the zone" field: *.umasscs.net. 9. Click the button. 10. Insert the iSiS Login domain in the "Add this Web site to the zone" field: ucollaborate

  5. Effect of surface passivation by SiN/SiO{sub 2} of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

    SciTech Connect (OSTI)

    Gassoumi, Malek, E-mail: malek.gassoumi@fsm.rnu.tn; Mosbahi, Hana; Zaidi, Mohamed Ali [Universite deMonastir, Laboratoire de Micro-Optoelectroniques et Nanostructures, Faculte des Sciences de Monastir (Tunisia); Gaquiere, Christophe [Universite des Sciences et Technologies de Lille, Institut d'Electronique de Microelectronique et de Nanotechnologie IEMN, Departement hyperfrequences et Semiconducteurs (France); Maaref, Hassen [Universite deMonastir, Laboratoire de Micro-Optoelectroniques et Nanostructures, Faculte des Sciences de Monastir (Tunisia)

    2013-07-15T23:59:59.000Z

    Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO{sub 2} passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO{sub 2} film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device.

  6. First-principles study of the interfacial adhesion between SiO2 and MoSi2 D. E. Jiang1 and Emily A. Carter2

    E-Print Network [OSTI]

    Carter, Emily A.

    the energy efficiency and per- formance of gas turbine engines requires structural materials able to operate on MoSi2, a potential high-temperature coating material for metals. This silica scale protects MoSi2 the potential of MoSi2 as a high-temperature structural material and coating. DOI: 10.1103/PhysRevB.72

  7. Bonding Structure of Phenylacetylene on Hydrogen-Terminated Si(111) and Si(100): Surface Photoelectron Spectroscopy Analysis and Ab Initio Calculations

    SciTech Connect (OSTI)

    M Kondo; T Mates; D Fischer; F Wudl; E Kramer

    2011-12-31T23:59:59.000Z

    Interfaces between phenylacetylene (PA) monolayers and two silicon surfaces, Si(111) and Si(100), are probed by X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy, and the results are analyzed using ab initio molecular orbital calculations. The monolayer systems are prepared via the surface hydrosilylation reaction between PA and hydrogen-terminated silicon surfaces. The following spectral features are obtained for both of the PA-Si(111) and PA-Si(100) systems: a broad {pi}-{pi}* shakeup peak at 292 eV (XPS), a broad first ionization peak at 3.8 eV (UPS), and a low-energy C 1s {yields} {pi}* resonance peak at 284.3 eV (NEXAFS). These findings are ascribed to a styrene-like {pi}-conjugated molecular structure at the PA-Si interface by comparing the experimental data with theoretical analysis results. A conclusion is drawn that the vinyl group can keep its {pi}-conjugation character on the hydrogen-terminated Si(100) [H:Si(100)] surface composed of the dihydride (SiH{sub 2}) groups as well as on hydrogen-terminated Si(111) having the monohydride (SiH) group. The formation mechanism of the PA-Si(100) interface is investigated within cluster ab initio calculations, and the possible structure of the H:Si(100) surface is discussed based on available data.

  8. Research on microwave joining of SiC

    SciTech Connect (OSTI)

    Silberglitt, R. [FM Technologies, Inc., Fairfax Station, VA (United States)

    1995-07-31T23:59:59.000Z

    Results: identification of optimum joining temperature range for reaction bonded Si carbide at 1420-1500 C; demonstration that specimens joined within this range have fracture roughness greater than as-received material; and demonstration of ability to use SiC formed in situ from the decomposition of polycarbosilane as a joining aid for sintered Si carbide. In the latter case, the interlayer material was also shown to fill any pores in the joining specimens near the interlayer. Together with the demonstration of leaktight joints between tube sections of reaction bonded and sintered SiC under the previous contract, these results provide the foundation for scaleup to joining of the larger and longer tubes needed for radiant burner and heat exchanger tube assemblies. The formation of SiC in situ is important because maintaining roundness of these large tubes is a technical challenge for the tube manufacturer, so that formation of a leaktight joint may require some degree of gap filling.

  9. Unraveling siRNA Unzipping Kinetics with Graphene

    E-Print Network [OSTI]

    Santosh Mogurampelly; Swati Panigrahi; Dhananjay Bhattacharyya; A. K. Sood; Prabal K. Maiti

    2012-07-19T23:59:59.000Z

    Using all atom molecular dynamics simulations, we report spontaneous unzipping and strong binding of small interfering RNA (siRNA) on graphene. Our dispersion corrected density functional theory based calculations suggest that nucleosides of RNA have stronger attractive interactions with graphene as compared to DNA residues. These stronger interactions force the double stranded siRNA to spontaneously unzip and bind to the graphene surface. Unzipping always nucleates at one end of the siRNA and propagates to the other end after few base-pairs get unzipped. While both the ends get unzipped, the middle part remains in double stranded form because of torsional constraint. Unzipping probability distributions fitted to single exponential function give unzipping time (t) of the order of few nanoseconds which decrease exponentially with temperature. From the temperature variation of unzipping time we estimate the energy barrier to unzipping.

  10. Studying the magnetic properties of CoSi single crystals

    SciTech Connect (OSTI)

    Narozhnyi, V. N., E-mail: narozhnyivn@gmail.com; Krasnorussky, V. N. [Russian Academy of Sciences, Vereshchagin Institute for High Pressure Physics (Russian Federation)

    2013-05-15T23:59:59.000Z

    The magnetic properties of CoSi single crystals have been measured in a range of temperatures T = 5.5-450 K and magnetic field strengths H {<=} 11 kOe. A comparison of the results for crystals grown in various laboratories allowed the temperature dependence of magnetic susceptibility {chi}(T) = M(T)/H to be determined for a hypothetical 'ideal' (free of magnetic impurities and defects) CoSi crystal. The susceptibility of this ideal crystal in the entire temperature range exhibits a diamagnetic character. The {chi}(T) value significantly increases in absolute value with decreasing temperature and exhibits saturation at the lowest temperatures studied. For real CoSi crystals of four types, paramagnetic contributions to the susceptibility have been evaluated and nonlinear (with respect to the field) contributions to the magnetization have been separated and taken into account in the calculations of {chi}(T).

  11. Joining SI3N4 for Advanced Turbomachinery Applications

    SciTech Connect (OSTI)

    GLASS, S. JILL; LOEHMAN, RONALD E.; HOSKING, F. MICHAEL; STEPHENS JR., JOHN J.; VIANCO, PAUL T.; NEILSEN, MICHAEL K.; WALKER, CHARLES A.; POLLINGER, J.P.; MAHONEY, F.M.; QUILLEN, B.G.

    2000-07-01T23:59:59.000Z

    The main objective of this project was to develop reliable, low-cost techniques for joining silicon nitride (Si{sub 3}N{sub 4}) to itself and to metals. For Si{sub 3}N{sub 4} to be widely used in advanced turbomachinery applications, joining techniques must be developed that are reliable, cost-effective, and manufacturable. This project addressed those needs by developing and testing two Si{sub 3}N{sub 4} joining systems; oxynitride glass joining materials and high temperature braze alloys. Extensive measurements were also made of the mechanical properties and oxidation resistance of the braze materials. Finite element models were used to predict the magnitudes and positions of the stresses in the ceramic regions of ceramic-to-metal joints sleeve and butt joints, similar to the geometries used for stator assemblies.

  12. Axial SiGe Heteronanowire Tunneling Field-Effect Transistors

    SciTech Connect (OSTI)

    Le, Son T.; Jannaty, P.; Luo, Xu; Zaslavsky, A.; Perea, Daniel E.; Dayeh, Shadi A.; Picraux, Samuel T.

    2012-10-31T23:59:59.000Z

    We present silicon-compatible tri-gated p-Ge/i-Si/n-Si axial heteronanowire tunneling field-effect transistors (TFETs), where on-state tunneling occurs in the Ge drain section, while off-state leakage is dominated by the Si junction in the source. Our TFETs have high ION ~ 2 A/m, fully suppressed ambipolarity, and a sub-threshold slope SS ~ 140 mV/decade over 4 decades of current with lowest SS ~ 50 mV/decade. Device operation in the tunneling mode is confirmed by three-dimensional TCAD simulation. Interestingly, in addition to the TFET mode, our devices work as standard nanowire FETs with good ION/IOFF ratio when the source-drain junction is forward-biased. The improved transport in both biasing modes confirms the benefits of utilizing bandgap engineered axial nanowires for enhancing device performance.

  13. An ultra-thin buffer layer for Ge epitaxial layers on Si

    SciTech Connect (OSTI)

    Kawano, M.; Yamada, S.; Tanikawa, K.; Miyao, M.; Hamaya, K. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)] [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Sawano, K. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)] [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)

    2013-03-25T23:59:59.000Z

    Using an Fe{sub 3}Si insertion layer, we study epitaxial growth of Ge layers on a Si substrate by a low-temperature molecular beam epitaxy technique. When we insert only a 10-nm-thick Fe{sub 3}Si layer in between Si and Ge, epitaxial Ge layers can be obtained on Si. The detailed structural characterizations reveal that a large lattice mismatch of {approx}4% is completely relaxed in the Fe{sub 3}Si layer. This means that the Fe{sub 3}Si layers can become ultra-thin buffer layers for Ge on Si. This method will give a way to realize a universal buffer layer for Ge, GaAs, and related devices on a Si platform.

  14. The effects of layering in ferroelectric Si-doped HfO{sub 2} thin films

    SciTech Connect (OSTI)

    Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu [Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States); Takmeel, Qanit; Moghaddam, Saeed [Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611 (United States); Zhou, Chuanzhen; Liu, Yang; Fancher, Chris M.; Jones, Jacob L. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27696-7907 (United States)

    2014-08-18T23:59:59.000Z

    Atomic layer deposited Si-doped HfO{sub 2} thin films approximately 10?nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO{sub 2} thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.

  15. Buffer layers for narrow bandgap a-SiGe solar cells

    SciTech Connect (OSTI)

    Liao, X.B.; Walker, J.; Deng, X.

    1999-07-01T23:59:59.000Z

    In high efficiency narrow bandgap (NBG) a-SiGe solar cells, thin buffer layers of unalloyed hydrogenated amorphous silicon (a-Si) are usually used at the interfaces between the a-SiGe intrinsic layer and the doped layers. They investigated the effect of inserting additional a-SiGe interface layers between these a-Si buffer layers and the a-SiGe absorber layer. They found that such additional interface layers increase solar cell V{sub oc} and FF sizably, most likely due to the reduction or elimination of the abrupt bandgap discontinuity between the a-SiGe absorber layer and the a-Si buffer layers. With these improved narrow bandgap solar cells incorporated into the fabrication of triple-junction a-Si based solar cells, they obtained triple cells with initial efficiency of 10.6%.

  16. Synthesis of SiO{sub 2}/?-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition

    SciTech Connect (OSTI)

    Zhang, Zhikun; Bi, Kaifeng; Liu, Yanhong; Qin, Fuwen; Liu, Hongzhu [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)] [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Bian, Jiming, E-mail: jmbian@dlut.edu.cn [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050 (China); Zhang, Dong [New Energy Source Research Center of Shenyang Institute of Engineering, Shengyang 110136 (China)] [New Energy Source Research Center of Shenyang Institute of Engineering, Shengyang 110136 (China); Miao, Lihua [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Department of Computer and Mathematical Basic Teaching, Shenyang Medical College, Shenyan 110034 (China)

    2013-11-18T23:59:59.000Z

    ?-SiC thin films were synthesized directly on graphite by hot filament chemical vapor deposition at low temperature. SiH{sub 4} diluted in hydrogen was employed as the silicon source, while graphite was functioned as both substrate and carbon source for the as-grown ?-SiC films. X-ray diffraction and Fourier transform infrared analysis indicate that SiO{sub 2}/?-SiC/graphite hybrid composite was formed after post annealing treatment, and its crystalline quality can be remarkably improved under optimized annealing conditions. The possible growth mechanism was proposed based on in situ etching of graphite by reactive hydrogen radicals at the atomic level.

  17. Spin drift in highly doped n-type Si

    SciTech Connect (OSTI)

    Kameno, Makoto; Ando, Yuichiro; Shinjo, Teruya [Graduate School of Engineering Science, Osaka University Osaka (Japan); Koike, Hayato; Sasaki, Tomoyuki; Oikawa, Tohru [Advanced Technology Development Center, TDK Cooperation, Chiba (Japan); Suzuki, Toshio [AIT, Akita Research Institute of Advanced Technology, Akita (Japan); Shiraishi, Masashi, E-mail: mshiraishi@kuee.kyoto-u.ac.jp [Graduate School of Engineering Science, Osaka University Osaka (Japan); Graduate School of Engineering, Kyoto University, Kyoto (Japan)

    2014-03-03T23:59:59.000Z

    A quantitative estimation of spin drift velocity in highly doped n-type silicon (Si) at 8?K is presented in this letter. A local two-terminal Hanle measurement enables the detection of a modulation of spin signals from the Si as a function of an external electric field, and this modulation is analyzed by using a spin drift-diffusion equation and an analytical solution of the Hanle-type spin precession. The analyses reveal that the spin drift velocity is linearly proportional to the electric field. The contribution of the spin drift effect to the spin signals is crosschecked by introducing a modified nonlocal four-terminal method.

  18. Recovery of Mo/Si multilayer coated optical substrates

    DOE Patents [OSTI]

    Baker, Sherry L. (Pleasanton, CA); Vernon, Stephen P. (Pleasanton, CA); Stearns, Daniel G. (Los Altos, CA)

    1997-12-16T23:59:59.000Z

    Mo/Si multilayers are removed from superpolished ZERODUR and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. The two step dry etching process removes SiO.sub.2 overlayer with a fluroine-containing gas and then moves molybdenum and silicon multilayers with a chlorine-containing gas. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates.

  19. Recovery of Mo/Si multilayer coated optical substrates

    DOE Patents [OSTI]

    Baker, S.L.; Vernon, S.P.; Stearns, D.G.

    1997-12-16T23:59:59.000Z

    Mo/Si multilayers are removed from superpolished ZERODUR and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. The two step dry etching process removes SiO{sub 2} overlayer with a fluroine-containing gas and then moves molybdenum and silicon multilayers with a chlorine-containing gas. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates. 5 figs.

  20. SiG Solar GmbH | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt LtdShawangunk, New York:SiG Solar GmbH Jump to: navigation, search Name: SiG

  1. SiXtron Advanced Materials Inc | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit with form HistoryRistma AGShandongShirke Biofuels JumpSi Pro AS Jump to:SiXtron

  2. IMPROVED pc-Si p-LAYER AND a-Si i-LAYER MATERIALS USING VHF PLASMA X. Deng, S. J. Jones, T. Liu, M. Izu and S. R. Ovshinsky

    E-Print Network [OSTI]

    Deng, Xunming

    IMPROVED pc-Si p-LAYER AND a-Si i-LAYER MATERIALS USING VHF PLASMA DEPOSITION X. Deng, S. J. Jones, Michigan 48084 ABSTRACT Microcrystalline Si p-layers have been widely used in a-Si solar cell technology of high quality pc-Si p-layer material using a modified very high frequency (VHF) plasma enhanced CVD

  3. Neutron activation analysis of the 30Si content of highly enriched 28Si: proof of concept and estimation of the achievable uncertainty

    E-Print Network [OSTI]

    D'Agostino, Giancarlo; Oddone, Massimo; Prata, Michele; Bergamaschi, Luigi; Giordani, Laura

    2014-01-01T23:59:59.000Z

    We investigated the use of neutron activation to estimate the 30Si mole fraction of the ultra-pure silicon material highly enriched in 28Si for the measurement of the Avogadro constant. Specifically, we developed a relative method based on Instrumental Neutron Activation Analysis and using a natural-Si sample as a standard. To evaluate the achievable uncertainty, we irradiated a 6 g sample of a natural-Si material and modeled experimentally the signal that would be produced by a sample of the 28Si-enriched material of similar mass and subjected to the same measurement conditions. The extrapolation of the expected uncertainty from the experimental data indicates that a measurement of the 30Si mole fraction of the 28Si-enriched material might reach a 4% relative combined standard uncertainty.

  4. Periodic arrays of epitaxial self-assembled SiGe quantum dot molecules grown on patterned Si substrates

    SciTech Connect (OSTI)

    Gray, J. L.; Hull, R.; Floro, J. A. [Department of Materials Science and Engineering, University of Pittsburgh, 848 Benedum Hall, Pittsburgh, Pennsylvania 15261 (United States); Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)

    2006-10-15T23:59:59.000Z

    Ex situ focused ion-beam (FIB) patterning of arrays of holes on Si (001) substrates results in the subsequent formation of SiGe quantum dot molecules at each of the patterned sites during heteroepitaxial growth under kinetically limited growth conditions where island formation is constrained. These quantum dot molecules are fourfold self-assembled island nanostructures bound by a central pit. During growth, material is ejected from the patterned sites forming the pits that in turn provide favorable sites for the cooperative nucleation of (105) faceted islands. The degree of order and quality of the resulting structures depend on many factors including growth temperature, ion-beam milling depth, Si buffer thickness, and spacings between FIB exposed sites. This technique provides a method for controlling the lateral placement of semiconductor nanostructures, which could be used in applications such as complex nanoelectronic architectures.

  5. Lithium diffusion at Si-C interfaces in silicon-graphene composites

    SciTech Connect (OSTI)

    Odbadrakh, Khorgolkhuu [Joint Institute for Computational Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States); McNutt, N. W. [Department of Chemical and Biomolecular Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States); Nicholson, D. M. [Computational Science and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States); Department of Physics, University of North Carolina, Asheville, North Carolina 28804 (United States); Rios, O. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States); Keffer, D. J. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States)

    2014-08-04T23:59:59.000Z

    Models of intercalated Li and its diffusion in Si-Graphene interfaces are investigated using density functional theory. Results suggest that the presence of interfaces alters the energetics of Li binding and diffusion significantly compared to bare Si or Graphene surfaces. Our results show that cavities along reconstructed Si surface provide diffusion paths for Li. Diffusion barriers calculated along these cavities are significantly lower than penetration barriers to bulk Si. Interaction with Si surface results in graphene defects, creating Li diffusion paths that are confined along the cavities but have still lower barrier than in bulk Si.

  6. Lithium diffusion at Si-C interfaces in Silicon-Graphene composites

    SciTech Connect (OSTI)

    Odbadrakh, Khorgolkhuu [ORNL; McNutt, Nichiolas William [University of Tennessee, Knoxville (UTK); Nicholson, Donald M. [Oak Ridge National Laboratory (ORNL); Rios, Orlando [ORNL; Keffer, David J. [University of Tennessee, Knoxville (UTK)

    2014-01-01T23:59:59.000Z

    Models of intercalated Li and its diffusion in Si-Graphene interfaces are investigated using Density Functional Theory. Results suggest that the presence of interfaces alters the energetics of Li binding and diffusion significantly compared to bare Si or Graphene surfaces. Our results show that cavities along reconstructed Si surface provide diffusion paths for Li. Diffusion barriers calculated along these cavities are significantly lower than penetration barriers to bulk Si. Interaction with Si surface results in graphene defects, creating Li diffusion paths that are confined along the cavities but have still lower barrier than in bulk Si.

  7. Light harvesting with Ge quantum dots embedded in SiO{sub 2} or Si{sub 3}N{sub 4}

    SciTech Connect (OSTI)

    Cosentino, Salvatore, E-mail: Salvatore.cosentino@ct.infn.it; Raciti, Rosario; Simone, Francesca; Crupi, Isodiana; Terrasi, Antonio; Mirabella, Salvo [MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Universit di Catania, via S. Sofia 64, 95123 Catania (Italy); Sungur Ozen, Emel; Aydinli, Atilla [Department of Physics, Bilkent University, 06800 Ankara (Turkey); Mio, Antonio M.; Nicotra, Giuseppe [IMM-CNR, VII strada 5, 95121 Catania (Italy); Turan, Rasit [Department of Physics, Middle East Technical University, 06531 Ankara (Turkey)

    2014-01-28T23:59:59.000Z

    Germanium quantum dots (QDs) embedded in SiO{sub 2} or in Si{sub 3}N{sub 4} have been studied for light harvesting purposes. SiGeO or SiGeN thin films, produced by plasma enhanced chemical vapor deposition, have been annealed up to 850?C to induce Ge QD precipitation in Si based matrices. By varying the Ge content, the QD diameter can be tuned in the 39?nm range in the SiO{sub 2} matrix, or in the 12?nm range in the Si{sub 3}N{sub 4} matrix, as measured by transmission electron microscopy. Thus, Si{sub 3}N{sub 4} matrix hosts Ge QDs at higher density and more closely spaced than SiO{sub 2} matrix. Raman spectroscopy revealed a higher threshold for amorphous-to-crystalline transition for Ge QDs embedded in Si{sub 3}N{sub 4} matrix in comparison with those in the SiO{sub 2} host. Light absorption by Ge QDs is shown to be more effective in Si{sub 3}N{sub 4} matrix, due to the optical bandgap (0.91.6?eV) being lower than in SiO{sub 2} matrix (1.22.2?eV). Significant photoresponse with a large measured internal quantum efficiency has been observed for Ge QDs in Si{sub 3}N{sub 4} matrix when they are used as a sensitive layer in a photodetector device. These data will be presented and discussed, opening new routes for application of Ge QDs in light harvesting devices.

  8. Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts

    SciTech Connect (OSTI)

    Kamioka, J.; Oda, S. [Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-11, Ookayama, Meguro-ku, Tokyo, 152-8552 (Japan); Kodera, T., E-mail: kodera.t.ac@m.titech.ac.jp [Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-11, Ookayama, Meguro-ku, Tokyo, 152-8552 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-NE-25, Ookayama, Meguro-ku, Tokyo, 152-8552 (Japan); PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Takeda, K.; Obata, T. [Department of Applied Physics, School of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Tarucha, S. [Department of Applied Physics, School of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); RIKEN, Center for Emergent Matter Science (CEMS), 2-1, Hirosawa, Wako, Saitama 351-0198 (Japan)

    2014-05-28T23:59:59.000Z

    The frequency dependence of conductance noise through a gate-defined quantum point contact fabricated on a Si/SiGe modulation doped wafer is characterized. The 1/f{sup 2} noise, which is characteristic of random telegraph noise, is reduced by application of a negative bias on the global top gate to reduce the local gate voltage. Direct leakage from the large global gate voltage also causes random telegraph noise, and therefore, there is a suitable point to operate quantum dot measurement.

  9. Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures

    E-Print Network [OSTI]

    Payette, C; Koppinen, P J; Dovzhenko, Y; Sturm, J C; Petta, J R

    2011-01-01T23:59:59.000Z

    We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we are able to achieve electron gases with charge densities 1-3 X 10^{11}/cm^2 and mobilities in excess of 100,000 cm^2/Vs. Double quantum dot devices fabricated on these heterostructures show clear evidence of single charge transitions as measured in dc transport and charge sensing and exhibit electron temperatures of 100 mK in the single quantum dot regime.

  10. Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures

    E-Print Network [OSTI]

    C. Payette; K. Wang; P. J. Koppinen; Y. Dovzhenko; J. C. Sturm; J. R. Petta

    2012-03-21T23:59:59.000Z

    We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we are able to achieve electron gases with charge densities 1-3 X 10^{11}/cm^2 and mobilities in excess of 100,000 cm^2/Vs. Double quantum dot devices fabricated on these heterostructures show clear evidence of single charge transitions as measured in dc transport and charge sensing and exhibit electron temperatures of 100 mK in the single quantum dot regime.

  11. Investigation of the possibility of trans-Pacific non-stop flight operation in the winter season

    E-Print Network [OSTI]

    Heckroth, Lewis Carl

    1958-01-01T23:59:59.000Z

    ALesenatoI 0913322 0919472 Anrkvals 0922133 Aee&al Altsenaes, Hounealn Bess& 0920433-LQOL43R 0909573 3, QN 3, 000 brohsa, LR, NO cwaeoast 0907573 3, 500 3 SN cmseoast 7 ~573 0909573 091057R 09115 0912373 Ua Ltattsd Bn Lkeltsd /@a LLaleod... limited LLalesd 0905573 5 I SN 090757R S, SM 3, 000 5, 500 3gQN SI SQQ S, OM 5 I SOQ 3, 000 QgSOO SIQQQ 7&QN S, OQO ~ osccoesda seacoast ssattsesdg beohsn soattsxsdI scatesead sosefNS04y soaeesead soaetseady soaeesead ssattsead 10...

  12. Evolution of the complementary sex-determination gene of honey bees: Balancing selection and trans-species polymorphisms

    E-Print Network [OSTI]

    Cho, Soochin; Huang, Zachary Y.; Green, Daniel R.; Smith, Deborah R.; Zhang, Jianzhi

    2006-10-25T23:59:59.000Z

    (Klein 1987; Hughes and Nei 1988; Takahata and Nei 1990; Takahata et al. 1992) and the self-incompatibility genes of flowering plants (Ioerger et al. 1990; Dwyer et al. 1991; Richman et al. 1996; Charlesworth and Awadalla 1998) and fungi (Wu et al. 1998... at the DNA sequence level in two biological systems: the major histo- compatibility complex (MHC) of jawed vertebrates (Klein 1987; Hughes and Nei 1988; Takahata and Nei 1990; Takahata et al. 1992) and the self-incompatibility (SI) system of angiosperms...

  13. A Peltier cooling system for SiPM temperature stabilization

    E-Print Network [OSTI]

    Hebbeker, Thomas

    A Peltier cooling system for SiPM temperature stabilization von Simon Nieswand Bachelorarbeit auen thermisch isolierten Kupferblockes einzulassen, an welchen ein Peltier-Element angebracht wird. Um das System zu automatisieren, werden der Temperatursensor und die Stromquelle des Peltier- Elements

  14. Superconductivity in gallium-substituted Ba8Si46 clathrates

    E-Print Network [OSTI]

    Li, Yang; Zhang, Ruihong; Liu, Yang; Chen, Ning; Luo, Z. P.; Ma, Xingqiao; Cao, Guohui; Feng, Z. S.; Hu, Chia-Ren; Ross, Joseph H., Jr.

    2007-01-01T23:59:59.000Z

    superconductor, with an onset at T-C approximate to 3.3 K. For x=10 and higher, no superconductivity was observed down to T=1.8 K. This represents a strong suppression of superconductivity with increasing Ga content, compared to Ba8Si46 with T-C approximate to 8...

  15. Superconductivity in gallium-substituted Ba8Si46 clathrates

    E-Print Network [OSTI]

    Li, Yang; Zhang, Ruihong; Liu, Yang; Chen, Ning; Luo, Z. P.; Ma, Xingqiao; Cao, Guohui; Feng, Z. S.; Hu, Chia-Ren; Ross, Joseph H., Jr.

    2007-01-01T23:59:59.000Z

    superconductor, with an onset at T-C approximate to 3.3 K. For x=10 and higher, no superconductivity was observed down to T=1.8 K. This represents a strong suppression of superconductivity with increasing Ga content, compared to Ba8Si46 with T-C approximate to 8...

  16. Local structure order in Pd??Cu?Si?? liquid

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yue, G. Q.; Zhang, Y.; Sun, Y.; Shen, B.; Dong, F.; Wang, Z. Y.; Zhang, R. J.; Zheng, Y. X.; Kramer, M. J.; Wang, S. Y.; et al

    2015-02-05T23:59:59.000Z

    The short-range order (SRO) in Pd??Cu?Si?? liquid was studied by high energy x-ray diffraction and ab initio molecular dynamics (MD) simulations. The calculated pair correlation functions at different temperatures agree well with the experimental results. The partial pair correlation functions from ab intio MD simulations indicate that Si atoms prefer to be uniformly distributed while Cu atoms tend to aggregate. By performing structure analysis using Honeycutt-Andersen index, Voronoi tessellation, and atomic cluster alignment method, we show that the icosahedron and face-centered cubic SRO increase upon cooling. The dominant SRO is the Pd-centered Pd?Si? motif, namely the structure of which motifmoreis similar to the structure of Pd-centered clusters in the Pd?Si? crystal. The study further confirms the existence of trigonal prism capped with three half-octahedra that is reported as a structural unit in Pd-based amorphous alloys. The majority of Cu-centered clusters are icosahedra, suggesting that the presence of Cu is benefit to promote the glass forming ability.less

  17. Graeber et al. 2014 1 Supporting Information (SI Appendix)

    E-Print Network [OSTI]

    Chittka, Lars

    Graeber et al. 2014 1 Supporting Information (SI Appendix) Graeber et al. (2014) - www for the temperature- and gibberellin-dependent control of seed germination Kai Graeber, Ada Linkies, Tina Steinbrecher17 and WT #12;Graeber et al. 2014 2 Supplementary Methods Genome Size Analysis by Flow Cytometry

  18. Survival Analysis of Click Logs Si-Chi Chin

    E-Print Network [OSTI]

    Street, Nick

    Survival Analysis of Click Logs Si-Chi Chin Information Science The University of Iowa Iowa City and Subject Descriptors: H.4 [Information Systems Applications]: Miscellaneous General Terms: Theory Keywords: Clickthrough Logs, Kaplan-Meier Survival Anal- ysis, Click Curve Visualization 1. INTRODUCTION AND DATASET

  19. Resorption Rate Tunable Bioceramic: Si, Zn-Modified Tricalcium Phosphate

    SciTech Connect (OSTI)

    Xiang Wei

    2006-08-09T23:59:59.000Z

    This dissertation is organized in an alternate format. Several manuscripts which have already been published or are to be submitted for publication have been included as separate chapters. Chapter 1 is a general introduction which describes the dissertation organization and introduces the human bone and ceramic materials as bone substitute. Chapter 2 is the background and literature review on dissolution behavior of calcium phosphate, and discussion of motivation for this research. Chapter 3 is a manuscript entitled ''Si,Zn-modified tricalcium phosphate: a phase composition and crystal structure study'', which was published in ''Key Engineering Materials'' [1]. Chapter 4 gives more crystal structure details by neutron powder diffraction, which identifies the position for Si and Zn substitution and explains the stabilization mechanism of the structure. A manuscript entitled ''Crystal structure analysis of Si, Zn-modified Tricalcium phosphate by Neutron Powder Diffraction'' will be submitted to Biomaterials [2]. Chapter 5 is a manuscript, entitled ''Dissolution behavior and cytotoxicity test of Si, Zn-modified tricalcium phosphate'', which is to be submitted to Biomaterials [3]. This paper discusses the additives effect on the dissolution behavior of TCP, and cytotoxicity test result is also included. Chapter 6 is the study of hydrolysis process of {alpha}-tricalcium phosphate in the simulated body fluid, and the phase development during drying process is discussed. A manuscript entitled ''Hydrolysis of {alpha}-tricalcium phosphate in simulated body fluid and phase transformation during drying process'' is to be submitted to Biomaterials [4]. Ozan Ugurlu is included as co-authors in these two papers due to his TEM contributions. Appendix A is the general introduction of the materials synthesis, crystal structure and preliminary dissolution result. A manuscript entitled ''Resorption rate tunable bioceramic: Si and Zn-modified tricalcium phosphate'' was published in Ceramic Engineering and Science Proceedings (the 29th International Conference on Advanced Ceramics and Composites - Advances in Bioceramics and Biocomposites) [5].

  20. The structure of GaAs/Si(211) heteroepitaxial layers

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Weber, E.R.; Washburn, J.; Liu, T.Y.; Kroemer, H.

    1985-05-01T23:59:59.000Z

    Gallium arsenide films grown on (211)Si by molecular-beam epitaxy have been investigated using transmission electron microscopy. The main defects observed in the alloy were of misfit dislocations, stacking faults, and microtwin lamellas. Silicon surface preparation was found to play an important role on the density of defects formed at the Si/GaAs interface. Two different types of strained-layer superlattices, InGaAs/InGaP and InGaAs/GaAs, were applied either directly to the Si substrate, to a graded layer (GaP-InGaP), or to a GaAs buffer layer to stop the defect propagation into the GaAs films. Applying InGaAs/GaAs instead of InGaAs/InGaP was found to be more effective in blocking defect propagation. In all cases of strained-layer superlattices investigated, dislocation propagation was stopped primarily at the top interface between the superlattice package and GaAs. Graded layers and unstrained AlGaAs/GaAs superlattices did not significantly block dislocations propagating from the interface with Si. Growing of a 50 nm GaAs buffer layer at 505/sup 0/C followed by 10 strained-layer superlattices of InGaAs/GaAs (5 nm each) resulted in the lowest dislocation density in the GaAs layer (approx.5 x 10/sup 7//cm/sup 2/) among the structures investigated. This value is comparable to the recently reported density of dislocations in the GaAs layers grown on (100)Si substrates. Applying three sets of the same strained layers decreased the density of dislocations an additional approx.2 to 3 times.

  1. A thermodynamic model for hydrous silicate melts in the system NaAlSi3O8KAlSi3O8Si4O8H2O

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    A thermodynamic model for hydrous silicate melts in the system NaAlSi3O8­KAlSi3O8­Si4O8­H2O Marcus ­ remplacé par UMR6113 - ISTO Abstract Computation of crystal­liquid equilibria in hydrous silicate systems system. Author Keywords: Haplogranite system; Hydrous silicate melt; Liquidus phase equilibria; Linear

  2. MS Exam, Spring 2014, Solid State Electronics (ECE 103) 5. (15 points, 3 points each) 1. The energy band diagram for a p-Si/SiO2/n-Si capacitor

    E-Print Network [OSTI]

    California at San Diego, University of

    MS Exam, Spring 2014, Solid State Electronics (ECE 103) 5. (15 points, 3 points each) 1. The energy band diagram for a p-Si/SiO2/n-Si capacitor (SOS-C) under flat-band conditions is given below. The SOS to the device. (c) Same as (b) except now a large negative voltage is applied to the gate. #12;MS Exam, Spring

  3. Positron annihilation studies of the AlO{sub x}/SiO{sub 2}/Si interface in solar cell structures

    SciTech Connect (OSTI)

    Edwardson, C. J.; Coleman, P. G. [Department of Physics, University of Bath, Bath BA2 7AY (United Kingdom); Li, T.-T. A.; Cuevas, A. [College of Engineering and Computer Science, Australian National University, Canberra, ACT 0200 (Australia); Ruffell, S. [Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 (Australia)

    2012-03-01T23:59:59.000Z

    Film and film/substrate interface characteristics of 30 and 60 nm-thick AlO{sub x} films grown on Si substrates by thermal atomic layer deposition (ALD), and 30 nm-thick AlO{sub x} films by sputtering, have been probed using variable-energy positron annihilation spectroscopy (VEPAS) and Doppler-broadened spectra ratio curves. All samples were found to have an interface which traps positrons, with annealing increasing this trapping response, regardless of growth method. Thermal ALD creates an AlO{sub x}/SiO{sub x}/Si interface with positron trapping and annihilation occurring in the Si side of the SiO{sub x}/Si boundary. An induced positive charge in the Si next to the interface reduces diffusion into the oxides and increases annihilation in the Si. In this region there is a divacancy-type response (20 {+-} 2%) before annealing which is increased to 47 {+-} 2% after annealing. Sputtering seems to not produce samples with this same electrostatic shielding; instead, positron trapping occurs directly in the SiO{sub x} interface in the as-deposited sample, and the positron response to it increases after annealing as an SiO{sub 2} layer is formed. Annealing the film has the effect of lowering the film oxygen response in all film types. Compared to other structural characterization techniques, VEPAS shows larger sensitivity to differences in film preparation method and between as-deposited and annealed samples.

  4. Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO{sub 2} gate dielectrics

    SciTech Connect (OSTI)

    Samanta, Piyas, E-mail: piyas@vcfw.org [Department of Physics, Vidyasagar College for Women, 39 Sankar Ghosh Lane, Kolkata 700 006 (India); Huang, Heng-Sheng; Chen, Shuang-Yuan [Institute of Mechatronic Engineering, National Taipei University of Technology, No. 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan (China); Liu, Chuan-Hsi [Department of Mechatronic Technology, National Taiwan Normal University, No. 162, Sec. 1, He-Ping E. Rd., Taipei 106, Taiwan (China); Cheng, Li-Wei [Central R and D Division, United Microelectronics Corporation, No. 3, Li-Hsin Rd. II, Hsinchu 300, Taiwan (China)

    2014-02-21T23:59:59.000Z

    We present a detailed investigation on positive-bias temperature stress (PBTS) induced degradation of nitrided hafnium silicate (HfSiON)/SiO{sub 2} gate stack in n{sup +}-poly crystalline silicon (polySi) gate p-type metal-oxide-semiconductor (pMOS) devices. The measurement results indicate that gate dielectric degradation is a composite effect of electron trapping in as-fabricated as well as newly generated neutral traps, resulting a significant amount of stress-induced leakage current and generation of surface states at the Si/SiO{sub 2} interface. Although, a significant amount of interface states are created during PBTS, the threshold voltage (V{sub T}) instability of the HfSiON based pMOS devices is primarily caused by electron trapping and detrapping. It is also shown that PBTS creates both acceptor- and donor-like interface traps via different depassivation mechanisms of the Si{sub 3}???SiH bonds at the Si/SiO{sub 2} interface in pMOS devices. However, the number of donor-like interface traps ?N{sub it}{sup D} is significantly greater than that of acceptor-like interface traps ?N{sup A}{sub it}, resulting the PBTS induced net interface traps as donor-like.

  5. Axial Ge/Si nanowire heterostructure tunnel FETs.

    SciTech Connect (OSTI)

    Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

    2010-03-01T23:59:59.000Z

    Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx}20{sup o} off the <111> axis at about 300 nm away from the Ge/Si interface. This provides a natural marker for placing the gate contact electrodes and gate metal at appropriate location for desired high-on current and reduced ambipolarity as shown in Fig. 2. The 1D heterostructures allow band-edge engineering in the transport direction, not easily accessible in planar devices, providing an additional degree of freedom for designing tunnel FETs (TFETs). For instance, a Ge tunnel source can be used for efficient electron/hole tunneling and a Si drain can be used for reduced back-tunneling and ambipolar behavior. Interface abruptness on the other hand (particularly for doping) imposes challenges in these structures and others for realizing high performance TFETs in p-i-n junctions. Since the metal-semiconductor contacts provide a sharp interface with band-edge control, we use properly designed Schottky contacts (aided by 3D Silvaco simulations) as the tunnel barriers both at the source and drain and utilize the asymmetry in the Ge/Si channel bandgap to reduce ambipolar transport behavior generally observed in TFETs. Fig. 3 shows the room-temperature transfer curves of a Ge/Si heterostructure TFET (H-TFET) for different V{sub DS} values showing a maximum on-current of {approx}7 {micro}A, {approx}170 mV/decade inverse subthreshold slope and 5 orders of magnitude I{sub on}/I{sub off} ratios for all V{sub DS} biases considered here. This high on-current value is {approx}1750 X higher than that obtained with Si p-i-n{sup +} NW TFETs and {approx}35 X higher than that obtained with CNT TFET. The I{sub on}/I{sub off} ratio and inverse subthreshold slope compare favorably to that of Si {approx} 10{sup 3} I{sub on}/I{sub off} and {approx} 800 mV/decade SS{sup -1} but lags behind those of CNT TFET due to poor PECVD nitride gate oxide quality ({var_epsilon}{sub r} {approx} 3-4). The asymmetry in the Schottky barrier heights used here eliminates the stringent requirements of abrupt doped interfaces used in p-i-n based TFETs, which is hard to achieve both in thin-film and

  6. Comparative life-cycle energy payback analysis of multi-junction a-SiGe and nanocrystalline/a-Si modules

    SciTech Connect (OSTI)

    Fthenakis, V.; Kim, H.

    2010-07-15T23:59:59.000Z

    Despite the publicity of nanotechnologies in high tech industries including the photovoltaic sector, their life-cycle energy use and related environmental impacts are understood only to a limited degree as their production is mostly immature. We investigated the life-cycle energy implications of amorphous silicon (a-Si) PV designs using a nanocrystalline silicon (nc-Si) bottom layer in the context of a comparative, prospective life-cycle analysis framework. Three R and D options using nc-Si bottom layer were evaluated and compared to the current triple-junction a-Si design, i.e., a-Si/a-SiGe/a-SiGe. The life-cycle energy demand to deposit nc-Si was estimated from parametric analyses of film thickness, deposition rate, precursor gas usage, and power for generating gas plasma. We found that extended deposition time and increased gas usages associated to the relatively high thickness of nc-Si lead to a larger primary energy demand for the nc-Si bottom layer designs, than the current triple-junction a-Si. Assuming an 8% conversion efficiency, the energy payback time of those R and D designs will be 0.7-0.9 years, close to that of currently commercial triple-junction a-Si design, 0.8 years. Future scenario analyses show that if nc-Si film is deposited at a higher rate (i.e., 2-3 nm/s), and at the same time the conversion efficiency reaches 10%, the energy-payback time could drop by 30%.

  7. Annealing Simulations of Nano-Sized Amorphous Structures in SiC...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Simulations of Nano-Sized Amorphous Structures in SiC. Annealing Simulations of Nano-Sized Amorphous Structures in SiC. Abstract: A two-dimensional model of a nano-sized amorphous...

  8. Fuel Consumption and NOx Trade-offs on a Port-Fuel-Injected SI...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Consumption and NOx Trade-offs on a Port-Fuel-Injected SI Gasoline Engine Equipped with a Lean-NOx Trap Fuel Consumption and NOx Trade-offs on a Port-Fuel-Injected SI Gasoline...

  9. Direct Visualization of Spray and Combustion Inside a DI-SI Engine...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Visualization of Spray and Combustion Inside a DI-SI Engine and Its Implications to Flex-Fuel VVT Operations Direct Visualization of Spray and Combustion Inside a DI-SI Engine and...

  10. Hollow Core-Shell Structured Porous Si-C Nanocomposites for Li...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hollow Core-Shell Structured Porous Si-C Nanocomposites for Li-Ion Battery Anodes. Hollow Core-Shell Structured Porous Si-C Nanocomposites for Li-Ion Battery Anodes. Abstract:...

  11. Direct-gap optical gain of Ge on Si at room temperature

    E-Print Network [OSTI]

    Liu, Jifeng

    Lasers on Si are crucial components of monolithic electronicphotonic integration. Recently our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible with Si complementary metal oxide semiconductor ...

  12. Gene silencing in cancer cells using siRNA : genetic and functional studies

    E-Print Network [OSTI]

    Abdel Rahim, Ma'en Ahmad

    2004-09-30T23:59:59.000Z

    Sequence-specific small interfering RNA (siRNA) duplexes can be used for gene silencing in mammalian cells and as mechanistic probes for determining gene function. Transfection of siRNA for specificity protein 1 (Sp1) in ...

  13. Chemical Bonding In Amorphous Si Coated-carbon Nanotube As Anodes...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bonding In Amorphous Si Coated-carbon Nanotube As Anodes For Li ion Batteries: A XANES Study. Chemical Bonding In Amorphous Si Coated-carbon Nanotube As Anodes For Li ion...

  14. Characterization of Defects in N-type 4H-SiC After High-Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Characterization of Defects in N-type 4H-SiC After High-Energy N Ion Implantation by RBS-Channeling and Raman Spectroscopy. Characterization of Defects in N-type 4H-SiC After...

  15. Forsterite [Mg2SiO4)] Carbonation in Wet Supercritical CO2: An...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Forsterite Mg2SiO4) Carbonation in Wet Supercritical CO2: An in situ High Pressure X-Ray Diffraction Study. Forsterite Mg2SiO4) Carbonation in Wet Supercritical CO2: An in situ...

  16. Temperature response of 13C atoms in amorphized 6H-SiC. | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    processes in SiC. Citation: Jiang W, Y Zhang, V Shutthanandan, S Thevuthasan, and WJ Weber.2006."Temperature response of 13C atoms in amorphized 6H-SiC."Applied Physics Letters...

  17. Identification and characterization of receptor-specific peptides for siRNA delivery

    E-Print Network [OSTI]

    Ren, Yin

    Tumor-targeted delivery of siRNA remains a major barrier in fully realizing the therapeutic potential of RNA interference. While cell-penetrating peptides (CPP) are promising siRNA carrier candidates, they are universal ...

  18. Lipopeptide nanoparticles for potent and selective siRNA delivery in rodents and nonhuman primates

    E-Print Network [OSTI]

    Dong, Yizhou

    siRNA therapeutics have promise for the treatment of a wide range of genetic disorders. Motivated by lipoproteins, we report lipopeptide nanoparticles as potent and selective siRNA carriers with a wide therapeutic index. ...

  19. Computational models with thermodynamic and composition features improve siRNA design

    E-Print Network [OSTI]

    Shabalina, Svetlana A.

    Background: Small interfering RNAs (siRNAs) have become an important tool in cell and molecular biology. Reliable design of siRNA molecules is essential for the needs of large functional genomics projects. Results: To ...

  20. A Ge-on-Si laser for electronic-photonic integration

    E-Print Network [OSTI]

    Sun, Xiaochen

    We demonstrate room temperature photoluminescence and optical gain from the direct band gap transition of tensile strained n-type Ge-on-Si around 1600 nm, which can be applied to a Si-based laser for optical interconnects ...

  1. a-si alloy solar: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Last Page Topic Index 1 OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR Xunming Deng Renewable Energy Websites Summary: OPTIMIZATION OF a-SiGe BASED TRIPLE,...

  2. a-si based solar: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    cells based on porous Si and copper phthalocyanine derivatives I. A. Levitskya 25 October 2004) We demonstrate a solar cell based on n-type nanoporous Si (PSi) filled with...

  3. Over-Current Protection Scheme for SiC Power MOSFET DC Circuit Breaker

    E-Print Network [OSTI]

    Zhang, Yuan; Liang, Yung C.

    2015-01-01T23:59:59.000Z

    V. Radun, SiC based solid state power controller, in 23tha solid-state circuit breaker based on SiC power MOSFET withSolid-state DC circuit breakers made of the modern wide bandgap power

  4. Sensitivity of Si-based zero-bias backward diodes for microwave detection

    E-Print Network [OSTI]

    a small-signal model estab- lished to fit the measured S-parameters. Introduction: Si-based backward noise. Monolithic integration and registration with complementary metal-oxide-semiconductor (CMOS) or Si

  5. au-coated si influence: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and analysis of lateral SiC N-emitter SiGe P-base Schottky metal-collector (NPM) HBT on SOI Engineering Websites Summary: on SOI M. Jagadesh Kumar *, C. Linga Reddy...

  6. Luminescence Temperature and Pressure Studies of Zn2SiO4 Phosphors...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Temperature and Pressure Studies of Zn2SiO4 Phosphors Doped with Mn2+ and Eu3+ Ions. Luminescence Temperature and Pressure Studies of Zn2SiO4 Phosphors Doped with Mn2+ and Eu3+...

  7. Lipid-Modified Aminoglycoside Derivatives for In Vivo siRNA Delivery

    E-Print Network [OSTI]

    Zhang, Yunlong

    Rationally designed siRNA delivery materials that are enabled by lipid-modified aminoglycosides are demonstrated. Leading materials identified are able to self-assemble with siRNA into well-defined nanoparticles and induce ...

  8. Ethanol synthesis from syngas over Rh-based/SiO2 catalysts: A...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    synthesis from syngas over Rh-basedSiO2 catalysts: A combined experimental and theoretical modeling study. Ethanol synthesis from syngas over Rh-basedSiO2 catalysts: A combined...

  9. Mesoscale Origin of the Enhanced Cycling-Stability of the Si...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mesoscale Origin of the Enhanced Cycling-Stability of the Si-Conductive Polymer Anode for Li-ion Batteries. Mesoscale Origin of the Enhanced Cycling-Stability of the Si-Conductive...

  10. Investigation of stress-induced (100) platelet formation and surface exfoliation in plasma hydrogenated Si

    SciTech Connect (OSTI)

    Di Zengfeng; Wang Yongqiang; Nastasi, Michael; Rossi, Francois; Lee, Jung-Kun; Shao, Lin; Thompson, Phillip E. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Joint Research Centre, European Commission, 21020 Ispra (Vatican City State, Holy See,) (Italy); Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, Pennsylvania 15261 (United States); Department of Nuclear Engineering, Texas A and M University, 3133 TAMU, College Station, Texas 77843 (United States); Code 6812, Naval Research Laboratory, Washington, D.C. 20375-5347 (United States)

    2007-12-10T23:59:59.000Z

    We have studied the mechanisms underlying stress-induced platelet formation during plasma hydrogenation. The stress is purposely introduced by a buried SiGe stained layer in a Si substrate. During plasma hydrogenation, diffusing H is trapped in the region of the SiGe layer and H platelets are formed. The platelet orientation is controlled by the in-plane compressive stress, which favors nucleation and growth of platelets in the plane of stress and parallel to the substrate surface, and ultimately leads to controlled fracture along the SiGe layer. Also, the Si/SiGe/Si structure is found to be more efficient in utilizing H for platelet formation and growth compared to H ion implanted Si because there are fewer defects to trap H (e.g., V{sub n}H{sub m} and I{sub n}H{sub m}); therefore, the total H dose needed for layer exfoliation is greatly reduced.

  11. SiGe-On-Insulator (SGOI): Two Structures for CMOS Application

    E-Print Network [OSTI]

    Cheng, Zhiyuan

    Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance ...

  12. SiGe electro-absorption modulators for applications at 1550nm

    E-Print Network [OSTI]

    Bernardis, Sarah

    2008-01-01T23:59:59.000Z

    A novel SixGe?-x, electro-absorption modulator design is experimentally demonstrated. The device is waveguide integrated, butt-coupled into high index contrast Si/SiO2 waveguides. 0.75% Silicon concentration in the alloy ...

  13. Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate

    E-Print Network [OSTI]

    Lu, Bin

    AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for power electronics applications. Despite the low cost of the Si substrate, the breakdown voltage (V[subscript ...

  14. Unconventional behavior of the Ce3Pt23Si11 ferromagnet C. Opagiste,1,

    E-Print Network [OSTI]

    Boyer, Edmond

    23Si11 is in equilibrium with the non-centrosymetric heavy fermion superconductor CePt3Si, when and presents a heavy fermion supercon- ducting state at Tc = 750 mK. Many studies on the superconductivity

  15. Isotopic Ratios of SiC of Type X and Si 3 This appendix contains the isotopic data for 81 presolar SiC grains of type X and six preso

    E-Print Network [OSTI]

    Nittler, Larry R.

    for 81 presolar SiC grains of type X and six preso­ lar Si 3 N 4 grains, all found by ion imaging (see C 14 N/ 15 N CN \\Gamma /C \\Gamma 26 Al/ 27 Al KJG6L­103­1 SiC ­420 \\Sigma 4 ­480 \\Sigma 8 40.4 +0:7 \\Gamma0:7 55.3 +3:1 \\Gamma2:8 0.124 \\Delta \\Delta \\Delta KJG6L­105­1 SiC ­277 \\Sigma 11 ­404 \\Sigma 9 289

  16. First principles analysis of the initial oxidation of Si(001) and Si(111) surfaces terminated with H and CH3

    E-Print Network [OSTI]

    Wu, Zhigang

    ) Positive or negative gain: Role of thermal capture cross sections in impurity photovoltaic effect J. Appl in photovoltaics and micro-electronics research for over half a century. For example, precise control in metal-oxide semiconductor field effect transistors.1 In solar cells composed of crystalline Si, post

  17. Light induced instability in bilayer nc-Si/a-Si thin film transistors M Bauza and A Nathan

    E-Print Network [OSTI]

    Haddadi, Hamed

    silicon (nc-Si:H) have been used as the channel layer in thin film transistors (TFTs) and photovoltaic in the field effect mobility of the device due to the higher contact resistance, it increases the ON/OFF ratio it is important to investigate the effect of TFT stability when subjected to illumination and/or electrical

  18. Development of Solar Grade Silicon (SoG-Si) Feedstock by Recycling SoG-Si Wastes

    SciTech Connect (OSTI)

    Lifeng Zhang; Anping Dong; Lucas Nana Wiredu Damoah

    2013-01-24T23:59:59.000Z

    Experiment results of EM separation show that the non-metallic inclusions were successfully pushed to the boundary layer of the crucible under EM force. Larger frequency and smaller current generate smaller thickness of accumulated inclusions. More detailed EM separation experiments are undergoing to investigate the factors that affect the removal efficient of inclusions from SoG-Si

  19. Impact ionization of excitons in Ge/Si structures with Ge quantum dots grown on the oxidized Si(100) surfaces

    SciTech Connect (OSTI)

    Shklyaev, A. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Shegai, O. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Nakamura, Y. [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Ichikawa, M. [Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2014-05-28T23:59:59.000Z

    Photoconductivity (PC) of Si/Ge structures with Ge quantum dots (QDs) grown on the Si(100) surfaces covered with the ultrathin, about 0.30.5?nm thick, SiO{sub 2} films is studied as a function of the interband light intensity under various lateral voltages. The structures exhibit PC with steps and a step with a peak at the step edge for low- and high-temperature grown structures, respectively. These PC features are associated with the impact ionization of QD-related excitons. The PC at step edges increases by several orders of magnitude for a certain value which is governed by the balance between rates of photo-generation, recombination, and impact ionization of excitons. The electron localization deeper in Si from the Ge QD layer in conjunction with a narrow binding-energy distribution of excitons is suggested to be the main reason that provides the sharpness of PC steps. The PC appears to be very sensitive to the impact ionization and QD preparation conditions. This allows revealing the specific characteristics of QD structures, related to their electronic and structural properties.

  20. The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer

    SciTech Connect (OSTI)

    Brehm, M.; Grydlik, M.; Groiss, H.; Hackl, F.; Schaeffler, F.; Fromherz, T.; Bauer, G. [Institut fuer Halbleiter -u. Festkoerperphysik, Universitaet Linz, A-4040 Linz (Austria)

    2011-06-15T23:59:59.000Z

    For the prototypical SiGe/Si(001) Stranski-Krastanow (SK) growth system, the influence of intermixing caused by the deposition of a Si cap layer at temperatures T{sub cap} between 300 deg. C and 700 deg. C is studied both for the SiGe wetting layer (WL) and the SiGe islands. Systematic growth experiments were carried out with an ultrahigh resolution of down to 0.005 monolayers (ML) of deposited Ge. The properties of the samples were investigated via photoluminescence (PL) spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy. We studied in detail the influence of T{sub cap} in the three main coverage regions of SiGe SK growth, which are (i) the WL build-up regime, (ii) the island nucleation regime, where most of the Ge is supplied via material transfer from the WL, and (iii) the saturation regime, where the WL thickness remains initially stable. At T{sub cap} = 300 deg. C, we found that both the WL and the island are essentially preserved in composition and shape, whereas at 500 deg. C the WL becomes heavily alloyed during capping, and at 700 deg. C the islands also become alloyed. At T{sub cap} = 500 deg. C we found enhanced WL intermixing in the presence of dome-shaped islands, whereas at T{sub cap} 700 deg. C the WL properties become dominated by the dissolution of pyramid-shaped islands upon capping. At Ge coverages above {approx_equal}6 ML, we found an unexpected thickening of the WL, almost independently of T{sub cap}. This finding suggests that the density and the volume of the dome-shaped islands have an upper limit, beyond which excess Ge from the external source again becomes incorporated into the WL. Finally, we compared PL spectra with AFM-based evaluations of the integral island volumes in order to determine in a straightforward manner the average composition of the SiGe islands.