National Library of Energy BETA

Sample records for tran si tion

  1. CUSSSFIC4TION CMUXLLq

    Office of Legacy Management (LM)

    CUSSSFIC4TION CMUXLLq RITE AUG 1 7 1962 Fcx the Atomic. Energy Commisaion~ Chief. Declaseifle@tlon Brar\qh F-mm A. B. Grsaingsr (Other ends tifmtioel) The die wae foutq3 to workvery satiafactorilywiti thlanew Qpeof incert, andncm,of tbepmvLouedsfeotaofeoo+tH&' iOitYwaslmd. D&e& ._: . . ..YG ~Kl.3. i>ro;rid3 -&I:: clcsuro on bct.k.mds of the .plece m & Die #l, is also to be tried outoo 4zgust22. Barr~l~or~~~Die~~hadalaobeenawlLfiedta' plwidesd~do~-

  2. CLASSIFICdTION CAWXL~ DAm

    Office of Legacy Management (LM)

    CLASSIFICdTION CAWXL~ DAm NAR 6 1969 For the Atomic EhergY hDh=+= ,' ROBERT L JACKSON /(\' t' for the Chief, Declassification B~Jx~

  3. Transformation of cis- and trans-2,3-dimethyloxiranes on a Pd/SiO{sub 2} catalyst

    SciTech Connect (OSTI)

    Fasi, A.; Notheisz, F.; Bartok, M.

    1997-04-01

    The transformation of cis- and trans-2,3-dimethyloxiranes on a Pd/SiO{sub 2} catalyst, leading to the formation of 2-butanone and 2-butanol, was studied in hydrogen and deuterium atmosphere. The effect of hydrogen and deuterium atmosphere. The effect of hydrogen pressure (1.3-100 kPa) and temperature (323-423 K) on the reaction rate was also measured. The transformation of the two stereoisomers involves different mechanisms. In the case of the cis-isomer, hydrogen participates in the cleavage of the C-O bond and different surface species belong to the two products. In the case of the trans-isomer, ring opening by hydrogen (the formation of 2-butanol) is less significant and the main reaction is intramolecular migration leading to the formation of 2-butanone. Considering the geometry of the adsorbed species, cis-2,3-dimethyloxirane is most probably adsorbed on the surface of the Pd catalyst in a planar manner, while the adsorption of the trans-isomer is intermediate between edgewise and planar adsorption model. 18 refs., 3 figs., 3 tabs.

  4. Tran_Presentation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    acid media into a deep eutectic solvent using bis(2-ethylhexyl) phosphate Presented by: Kate Tran, Eastern Kentucky University Merinda Volia, Department of Nuclear Engineering, Texas A&M University Dr. Evgeny Tereshatov, Cyclotron Institute, Texas A&M University Advisor: Dr. Charles Folden III, Cyclotron Institute, Texas A&M University Introduction * Chemical properties of superheavy elements (Z > 108) are relatively unknown, with exception of element 112 * Preliminary research

  5. Trans Tech Green Power | Open Energy Information

    Open Energy Info (EERE)

    Trans Tech Green Power Jump to: navigation, search Name: Trans Tech Green Power Place: India Sector: Biomass Product: Plans to develop biomass projects in Rajasthan. References:...

  6. WebTrans Update - August 31, 2015

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Notices Rates Standards of Conduct Tariff TF Web Based Training Notice: WebTrans Update Posted Date: 8312015 BPAT is deploying a minor change to Production webTrans in...

  7. WebTrans Update - September 9, 2015

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Notices Rates Standards of Conduct Tariff TF Web Based Training Notice: WebTrans Update Posted Date: 992015 BPAT is deploying a change to Production webTrans today...

  8. Trans India Acquisition Corporation | Open Energy Information

    Open Energy Info (EERE)

    India Acquisition Corporation Jump to: navigation, search Name: Trans-India Acquisition Corporation Place: Delaware Sector: Solar Product: Blank check company to be merged with...

  9. Hydrogen Transition (HyTRANS) Model

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    optimization of an objective function that reflects private costs and benefits. ... Platform, Requirements & Availability HyTRANS is a dynamic, non- linear optimization, ...

  10. TransWest Old | Open Energy Information

    Open Energy Info (EERE)

    Old Jump to: navigation, search NEPA Document Collection for: TransWest Old EIS NEPA name unknown General NEPA Document Info Environmental Analysis Type EIS Applicant Not Provided...

  11. IRAK4 Dimerization and Trans-Autophosphorylation Are Induced...

    Office of Scientific and Technical Information (OSTI)

    IRAK4 Dimerization and Trans-Autophosphorylation Are Induced by Myddosome Assembly Citation Details In-Document Search Title: IRAK4 Dimerization and Trans-Autophosphorylation Are ...

  12. EIS-0139: Trans-Alaska Gas System

    Broader source: Energy.gov [DOE]

    This EIS analyzes the Yukon Pacific Corporation's proposed construction of the Trans-Alaska Gas System (TAGS), a 796.5-mile long, 36-inch diameter pipeline to transport high-pressured natural gas between Prudhoe Bay and a tidewater terminal and liquefied natural gas plant near Anderson Bay, Alaska.

  13. New England Hydro-Trans Corp | Open Energy Information

    Open Energy Info (EERE)

    Hydro-Trans Corp Jump to: navigation, search Name: New England Hydro-Trans Corp Place: New Hampshire Phone Number: 1.800.661.3805 Website: www.transcanada.comindex.html Twitter:...

  14. New England Hydro-Tran Elec Co | Open Energy Information

    Open Energy Info (EERE)

    New England Hydro-Tran Elec Co Jump to: navigation, search Name: New England Hydro-Tran Elec Co Place: Massachusetts Phone Number: 860 729 9767 Website: www.nehydropower.com...

  15. Infrared absorption of trans-1-chloromethylallyl and trans-1-methylallyl radicals produced in photochemical reactions of trans-1,3-butadiene and C Script-Small-L {sub 2} in solid para-hydrogen

    SciTech Connect (OSTI)

    Bahou, Mohammed; Wu, Jen-Yu; Tanaka, Keiichi; Lee, Yuan-Pern

    2012-08-28

    The reactions of chlorine and hydrogen atoms with trans-1,3-butadiene in solid para-hydrogen (p-H{sub 2}) were investigated with infrared (IR) absorption spectra. When a p-H{sub 2} matrix containing C Script-Small-L {sub 2} and trans-1,3-butadiene was irradiated with ultraviolet light at 365 nm, intense lines at 650.3, 809.0, 962.2, 1240.6 cm{sup -1}, and several weaker ones due to the trans-1-chloromethylallyl radical, Bullet (CH{sub 2}CHCH)CH{sub 2}C Script-Small-L , appeared. Observed wavenumbers and relative intensities agree with the anharmonic vibrational wavenumbers and IR intensities predicted with the B3PW91/6-311++g(2d, 2p) method. That the C Script-Small-L atom adds primarily to the terminal carbon atom of trans-1,3-butadiene is in agreement with the path of minimum energy predicted theoretically, but in contrast to the reaction of C Script-Small-L + propene in solid p-H{sub 2}[J. Amicangelo and Y.-P. Lee, J. Phys. Chem. Lett. 1, 2956 (2010)] in which the addition of C Script-Small-L to the central C atom is favored, likely through steric effects in a p-H{sub 2} matrix. A second set of lines, intense at 781.6, 957.9, 1433.6, 2968.8, 3023.5, 3107.3 cm{sup -1}, were observed when the UV-irradiated C Script-Small-L {sub 2}/trans-1,3-butadiene/p-H{sub 2} matrix was further irradiated with IR light from a SiC source. These lines are assigned to the trans-1-methylallyl radical, Bullet (CH{sub 2}CHCH)CH{sub 3}, produced from reaction of 1,3-butadiene with a H atom resulted from the reaction of C Script-Small-L atoms with solid p-H{sub 2} exposed to IR radiation.

  16. EA-262 TransCanada Power Marketing Ltd | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    TransCanada Power Marketing Ltd EA-262 TransCanada Power Marketing Ltd Order authorizing TransCanada Power Marketing Ltd to export electric energy to Canada. EA-262 TransCanada ...

  17. The SpallaTion

    Office of Environmental Management (EM)

    The Science Behind Cheaper Biofuels The Science Behind Cheaper Biofuels August 15, 2011 - 11:50am Addthis Brookhaven National Laboratory is modeling the metabolic processes in rapeseed plants to optimize production of plant oils for biofuels. Shown above are developing embryos extracted from a growing rapeseed plant. The embryos accumulate seed oils which represent the most energy-dense form of biologically stored sunlight, and have great potential as renewable resources for fuel and industrial

  18. Microsoft Word - tran_abstract.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    using bis(2-ethylhexyl) phosphate K.A.Tran 1,2 , M.F. Volia 1,3 , E.E. Tereshatov 1 , and C.M. Folden 1 1 Cyclotron Institute, Texas A&M University, College Station, TX 77843 USA 2 Eastern Kentucky University, Richmond, KY 40475 USA 3 Department of Nuclear Engineering, Texas A&M University, College Station, TX 77843 USA The chemical properties of superheavy elements are relatively unknown due to their short half- lives and difficulty of production. In preparation for a future experiment

  19. Coway International TechTrans Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    company with experience in technology transfer in China, specialising in biotech, chemical, energy environment and CDM areas. References: Coway International TechTrans Co...

  20. Deseret Generation & Tran Coop (Colorado) | Open Energy Information

    Open Energy Info (EERE)

    Coop (Colorado) Jump to: navigation, search Name: Deseret Generation & Tran Coop Place: Colorado Website: www.deseretpower.com Outage Hotline: (801) 619-6500 References: EIA Form...

  1. EA-216-B TransAlta Energy Marketing (U.S) Inc | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    B TransAlta Energy Marketing (U.S) Inc EA-216-B TransAlta Energy Marketing (U.S) Inc Order authorizing TransAlta Energy Marketing (U.S) Inc to export electric energy to Canada. ...

  2. EA-262-B TransCanada Power Marketing Ltd | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    B TransCanada Power Marketing Ltd EA-262-B TransCanada Power Marketing Ltd Order authorizing TransCanada Power Marketing Ltd to export electric energy to Canada. EA-262-B ...

  3. EA-262-A TransCanada Power Marketing Ltd | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    A TransCanada Power Marketing Ltd EA-262-A TransCanada Power Marketing Ltd Order authorizing TransCanada Power Marketing Ltd to export electric energy to Canada. EA-262-A ...

  4. EA-216 TransAlta Energy Marketing (U.S) Inc | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    TransAlta Energy Marketing (U.S) Inc EA-216 TransAlta Energy Marketing (U.S) Inc Order authorizing TransAlta Energy Marketing (U.S) Inc to export electric energy to Canada. EA-216 ...

  5. EA-262-C TransCanada Power Marketing Ltd | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    C TransCanada Power Marketing Ltd EA-262-C TransCanada Power Marketing Ltd Order authorizing TransCanada Power Marketing Ltd to export electric energy to Canada. EA-262-C ...

  6. EA-216-C TransAlta Energy Marketing (U.S.)Inc. | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    -C TransAlta Energy Marketing (U.S.)Inc. EA-216-C TransAlta Energy Marketing (U.S.)Inc. Order authorizing TransAlta Energy Marketing (U.S.) Inc to export electric energy to Canada. ...

  7. TransCanada Power Mktg Ltd (Connecticut) | Open Energy Information

    Open Energy Info (EERE)

    Connecticut Phone Number: 1.800.661.3805 Website: www.transcanada.compowermarke Twitter: @TransCanada Outage Hotline: 1-800-447-8066 References: EIA Form EIA-861 Final Data...

  8. TransCanada Energy Marketing ULC | Open Energy Information

    Open Energy Info (EERE)

    Marketing ULC Jump to: navigation, search Name: TransCanada Energy Marketing ULC Place: California References: EIA Form EIA-861 Final Data File for 2010 - File1a1 EIA Form 861...

  9. VTA, SamTrans Look into Future with Bus Demo

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    induction motor for propulsion. Although there are several fuel cell chemistries and configura- tions, PEM is generally recog- nized as the best combination of electrochemistry, operating temperature, and weight for transportation applications. The fuel cell supplies electric current via an inverter to the propulsion motor, which is a proprietary design. This chassis- mounted, three-phase, induction motor is rated at 225 kW (369 horsepower). Hydrogen is stored onboard in eleven 5,000-psi

  10. Application to export electric energy OE docket No. EA-262-C TransCanada

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Power Marketing Ltd | Department of Energy docket No. EA-262-C TransCanada Power Marketing Ltd Application to export electric energy OE docket No. EA-262-C TransCanada Power Marketing Ltd Application from TransCanada Power Marketing Ltd to export electric energy to Canada. Application to export electric energy OE docket No. EA-262-C TransCanada Power Marketing Ltd (1.02 MB) More Documents & Publications EA-262-C TransCanada Power Marketing Ltd EA-262-A TransCanada Power Marketing Ltd

  11. EA-216-D TransAlta Energy Marketing (U.S.) Inc. | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    D TransAlta Energy Marketing (U.S.) Inc. EA-216-D TransAlta Energy Marketing (U.S.) Inc. Order from TEMUS to export electric energy to Canada. EA-216-D TEMUS CN.pdf (762.11 KB) More Documents & Publications Application to Export Electric Energy OE Docket No. EA-216-D TransAlta Energy Marketing (U.S.) Inc. EA-216-C TransAlta Energy Marketing (U.S.)Inc

  12. Application to Export Electric Energy OE Docket No. EA-216-D TransAlta

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Marketing (U.S.) Inc. | Department of Energy Export Electric Energy OE Docket No. EA-216-D TransAlta Energy Marketing (U.S.) Inc. Application to Export Electric Energy OE Docket No. EA-216-D TransAlta Energy Marketing (U.S.) Inc. Application from TEMUS to export electric energy to Canada. EA-216-D TransAlta Energy Mktg (CN).pdf (449.47 KB) More Documents & Publications EA-216-D TransAlta Energy Marketing (U.S.) Inc. EA-216-C TransAlta Energy Marketing (U.S.)Inc. Application to

  13. Trans ecuadorian pipeline; Mountainous pipeline restoration a logistical masterpiece

    SciTech Connect (OSTI)

    Hamilton, L. )

    1988-06-01

    The Trans Ecuadorian Pipeline pumped approximately 300,000 b/d of crude from fields in eastern Ecuador to an export terminal and refinery at Esmeraldas on the Pacific coast. The devastation resulting from an earthquake cut off the main portion of export income as well as domestic fuel supplies and propane gas. Approximately 25 km of the pipeline was destroyed. This article details how the pipeline was reconstructed, including both the construction of a temporary line and of permanent facilities.

  14. SiNode Systems

    Broader source: Energy.gov [DOE]

    SiNode Systems is a battery materials venture developing silicon-graphene anodes for the next generation of lithium-ion batteries. SiNode anodes offer higher battery capacity and faster charging rates, all while being produced via a low cost solution chemistry-based manufacturing process.

  15. Analyzing the Impacts of Policies and Technological Change Using HyTrans |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Analyzing the Impacts of Policies and Technological Change Using HyTrans Analyzing the Impacts of Policies and Technological Change Using HyTrans Presentation by ORNL's David Greene at the 2010 - 2025 Scenario Analysis for Hydrogen Fuel Cell Vehicles and Infrastructure Meeting on August 9 - 10, 2006 in Washington, D.C. greene_scenarios_hytrans.pdf (365.6 KB) More Documents & Publications Integrated Market Modeling of Hydrogen Transition Scenarios with HyTrans Cost

  16. Trans-Americas leads the way into municipal textile recycling

    SciTech Connect (OSTI)

    Ridgley, H.

    1998-08-01

    Most textile waste in the US still goes to the landfill--an estimated 6.6 million tons each year. But thanks to the efforts of textile recycles--such as Trans-Americas Textile Recycling CO. (Brooklyn, NY)--another 1.25 million tons gets salvaged for reuse overseas or as a feedstock for the wiping and fiber industries, according to the Council for Textile Recycling. In an era where global population levels are increasing the demand for textile waste from the Western world and municipalities are struggling to reach their waste diversion goals, boosting textile recovery rates makes sense. And it`s a waste that can be easily incorporated into existing municipal curbside or drop-off recycling programs. Since 1942, when the company first opened its doors in Brooklyn, NY, it purchased textile discards from charities. While those discards still make up the majority of Trans-Americas` supply, in the last two years, the company also began purchasing post-consumer material from municipalities. Textiles are definitely going to be an increasingly important part of recycling, as states look to meet their mandates.

  17. The benzene metabolite trans,trans-muconaldehyde blocks gap junction intercellular communication by cross-linking connexin43

    SciTech Connect (OSTI)

    Rivedal, Edgar Leithe, Edward

    2008-11-01

    Benzene is used at large volumes in many different human activities. Hematotoxicity and cancer-causation as a result of benzene exposure was recognized many years ago, but the mechanisms involved remain unclear. Aberrant regulation of gap junction intercellular communication (GJIC) has been linked to both cancer induction and interference with normal hematopoietic development. We have previously suggested that inhibition of GJIC may play a role in benzene toxicity since benzene metabolites were found to block GJIC, the ring-opened trans,trans-muconaldehyde (MUC) being the most potent metabolite. In the present work we have studied the molecular mechanisms underlying the MUC-induced inhibition of gap junctional communication. We show that MUC induces cross-linking of the gap junction protein connexin43 and that this is likely to be responsible for the induced inhibition of GJIC, as well as the loss of connexin43 observed in Western blots. We also show that glutaraldehyde possesses similar effects as MUC, and we compare the effects to that of formaldehyde. The fact that glutaraldehyde and formaldehyde have been associated with induction of leukemia as well as disturbance of hematopoiesis, strengthens the possible link between the effect of MUC on gap junctions, and the toxic effects of benzene.

  18. Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates

    SciTech Connect (OSTI)

    Drozdov, Yu. N. Drozdov, M. N.; Yunin, P. A.; Yurasov, D. V.; Shaleev, M. A.; Novikov, A. V.

    2015-01-15

    It is demonstrated using X-ray diffraction and atomic force microscopy that elastic stresses in GeSi layers on Si (115) substrates relax more effectively than in the same layers on Si (001) substrates. This fact is attributed to the predominant contribution of one of the (111) slip planes on the (115) cut. The atomicforce-microscopy image of the GeSi/Si(115) surface reveals unidirectional slip planes, while the GeSi/Si(001) image contains a grid of orthogonal lines and defects at the points of their intersection. As a result, thick GeSi layers on Si (115) have a reduced surface roughness. A technique for calculating the parameters of relaxation of the layer on the Si (115) substrate using X-ray diffraction data is discussed.

  19. Kinetics of trans-cis isomerization in azobenzene dimers at an air-water interface

    SciTech Connect (OSTI)

    Kumar, Bharat; Suresh, K. A.

    2009-08-15

    We have studied the kinetics of trans to cis isomerization under the illumination of ultraviolet light, in the Langmuir monolayer of mesogenic azobenzene dimer, bis-[5-(4{sup '}-n-dodecyloxy benzoyloxy)-2-(4{sup ''}-methylphenylazo)phenyl] adipate, at an air-water interface. We find that the trans to cis isomerization reaction of the molecules in the monolayer shows deviation from the first-order kinetics unlike those reported on Langmuir monolayers of azobenzene molecules. We attribute the deviation from first-order kinetics to the simultaneous photoisomerization of trans isomers to form cis isomers and the reverse thermal isomerization of cis isomers to form trans isomers. Our analysis of the rate of change of mole fraction of trans isomers to form cis isomers indicates a first-order kinetics for trans to cis photoisomerization reaction and a second-order kinetics for cis to trans thermal isomerization reaction. This second-order kinetics mechanism is similar to the Lindemann-Hinshelwood mechanism for the unimolecular reactions at low concentration of reactants. The formation of the activated cis isomer by collisions is a slow process as compared to the decay of the activated cis isomer to trans isomer in the liquid expanded phase. This results in the second-order kinetics for the thermal isomerization of cis isomers.

  20. Trans beta substituted chlorins and methods of making and using the same

    DOE Patents [OSTI]

    Lindsey, Jonathan S.; Balasubramanian, Thiagarajan

    2003-05-06

    Trans beta substituted chlorins and methods of making the same are disclosed, along with polymers formed from or containing such trans beta substituted chlorins as one or more monomeric units therein, light harvesting rods formed from such polymers, and electrodes carrying such polymers.

  1. A note on trans-Planckian tail effects

    SciTech Connect (OSTI)

    Graef, L.L.; Brandenberger, R.

    2015-09-09

    We study the proposal by Mersini et al. http://dx.doi.org/10.1103/PhysRevD.64.043508 that the observed dark energy might be explained by the back-reaction of the set of tail modes in a theory with a dispersion relation in which the mode frequency decays exponentially in the trans-Planckian regime. The matter tail modes are frozen out, however they induce metric fluctuations. The energy-momentum tensor with which the tail modes effect the background geometry obtains contributions from both metric and matter fluctuations. We calculate the equation of state induced by the tail modes taking into account the gravitational contribution. We find that, in contrast to the case of frozen super-Hubble cosmological fluctuations, in this case the matter perturbations dominate, and they yield an equation of state which to leading order takes the form of a positive cosmological constant.

  2. Trans-Atlantic Workshop on Rare Earth Elements and Other Critical Materials for a Clean Energy Future

    Office of Energy Efficiency and Renewable Energy (EERE)

    Trans-Atlantic Workshop on Rare Earth Elements and Other Critical Materials for a Clean Energy Future

  3. Application to export electric energy OE Docket No. EA-216-C TransAlta

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Marketing (U.S) Inc: Federal Register Notice Volume 76, No. 14 - Jan. 21, 2011 | Department of Energy export electric energy OE Docket No. EA-216-C TransAlta Energy Marketing (U.S) Inc: Federal Register Notice Volume 76, No. 14 - Jan. 21, 2011 Application to export electric energy OE Docket No. EA-216-C TransAlta Energy Marketing (U.S) Inc: Federal Register Notice Volume 76, No. 14 - Jan. 21, 2011 Application from TransAlta Energy Marketing (U.S) Inc to export electric energy to

  4. BPAT webTrans Update to CDE Shared Path Summary - October 9,...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Notices Rates Standards of Conduct Tariff TF Web Based Training Notice: BPAT webTrans Update to CDE Shared Path Summary Posted Date: 1092015 BPAT is deploying a change to...

  5. BPAT webTrans Update to CDE Shared Path Summary - November 5...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Notices Rates Standards of Conduct Tariff TF Web Based Training Notice: BPAT webTrans Update to CDE Shared Path Summary Posted Date: 1152015 BPAT is deploying a change to...

  6. TransCanada Power Mktg Ltd (New Hampshire) | Open Energy Information

    Open Energy Info (EERE)

    Place: New Hampshire Phone Number: 1.800.661.3805 Website: www.transcanada.comindex.html Twitter: @TransCanada Outage Hotline: 1-800-447-8066 References: EIA Form EIA-861 Final...

  7. Regulatory Interactions in ProKaryotes from RegTransBase

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Dubchak, Inna; Gelfand, Mikhail

    RegTransBase, a manually curated database of regulatory interactions in prokaryotes, captures the knowledge in published scientific literature using a controlled vocabulary. RegTransBase describes a large number of regulatory interactions reported in many organisms and contains various types of experimental data, in particular: the activation or repression of transcription by an identified direct regulator determining the transcriptional regulatory function of a protein (or RNA) directly binding to DNA or RNA mapping or prediction of binding sites for a regulatory protein characterization of regulatory mutations Currently, the RegTransBase content is derived from about 3000 relevant articles describing over 7000 experiments in relation to 128 microbes. It contains data on the regulation of about 7500 genes and evidence for 6500 interactions with 650 regulators. RegTransBase also contains manually created position weight matrices (PWM) that can be used to identify candidate regulatory sites in over 60 species. (Specialized Interface)

  8. Integrated Market Modeling of Hydrogen Transition Scenarios with HyTrans |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Integrated Market Modeling of Hydrogen Transition Scenarios with HyTrans Integrated Market Modeling of Hydrogen Transition Scenarios with HyTrans Presentation by Paul Leiby of Oak Ridge National Laboratory at the Joint Meeting on Hydrogen Delivery Modeling and Analysis, May 8-9, 2007 deliv_analysis_leiby.pdf (740.06 KB) More Documents & Publications DOE Hydrogen Transition Analysis Workshop Hydrogen Policy and Analyzing the Transition Hydrogen Transition Study

  9. Analyzing the Impacts of Policies and Technological Change Using HyTrans

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Scenarios for 2010 Scenarios for 2010 - - 2025 & Beyond: 2025 & Beyond: Analyzing the Impacts of Policies and Analyzing the Impacts of Policies and Technological Change Using Technological Change Using HyTrans HyTrans David L. Greene, ORNL David L. Greene, ORNL Paul N. Leiby, ORNL Paul N. Leiby, ORNL David Bowman, David Bowman, Econotech Econotech Elzbieta Tworek, Strata Elzbieta Tworek, Strata - - G G 2010 2010 - - 2025 Scenario Analysis Workshop 2025 Scenario Analysis Workshop August 9

  10. Application to Export Electric Energy OE Docket No. EA-216-C TransAlta

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Marketing (U.S) Inc . Canadian Electrical Association Comments | Department of Energy Export Electric Energy OE Docket No. EA-216-C TransAlta Energy Marketing (U.S) Inc . Canadian Electrical Association Comments Application to Export Electric Energy OE Docket No. EA-216-C TransAlta Energy Marketing (U.S) Inc . Canadian Electrical Association Comments Protest of the Canadian Electricity Association and the Electric Power Supply Association to Sierra Club's Notice of Intervention and

  11. Regulatory Interactions in ProKaryotes from RegTransBase

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Dubchak, Inna; Gelfand, Mikhail

    RegTransBase, a manually curated database of regulatory interactions in prokaryotes, captures the knowledge in published scientific literature using a controlled vocabulary. RegTransBase describes a large number of regulatory interactions reported in many organisms and contains various types of experimental data, in particular: the activation or repression of transcription by an identified direct regulator determining the transcriptional regulatory function of a protein (or RNA) directly binding to DNA or RNA mapping or prediction of binding sites for a regulatory protein characterization of regulatory mutations. RegTransBase also contains manually created position weight matrices (PWM) that can be used to identify candidate regulatory sites in over 60 species. (Specialized Interface)

  12. Application to Export Electric Energy OE Docket No. EA-216-D TransAlta

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Marketing (U.S.) Inc.: Federal Register Notice, Volume 81, No. 46 - March 9, 2016 | Department of Energy Export Electric Energy OE Docket No. EA-216-D TransAlta Energy Marketing (U.S.) Inc.: Federal Register Notice, Volume 81, No. 46 - March 9, 2016 Application to Export Electric Energy OE Docket No. EA-216-D TransAlta Energy Marketing (U.S.) Inc.: Federal Register Notice, Volume 81, No. 46 - March 9, 2016 Application from TEMUS to export electric energy to Canada. Federal Register

  13. Integrated Market Modeling of Hydrogen Transition Scenarios with HyTrans

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Integrated Market Modeling of Hydrogen Transition Scenarios with HyTrans Paul N. Leiby, David L. Greene and David Bowman Oak Ridge National Laboratory A presentation to the Hydrogen Delivery Analysis Meeting FreedomCAR and Fuels Partnership Delivery, Storage and Hydrogen Pathways Tech Teams May 8-9, 2007 Columbia, MD 2 OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY Drawing from several other DOE models, HyTrans integrates supply and demand in a dynamic non-linear market model to 2050.

  14. Si Brilliant Technology Ltd | Open Energy Information

    Open Energy Info (EERE)

    Si Brilliant Technology Ltd Jump to: navigation, search Name: Si-Brilliant Technology Ltd Place: Zhejiang Province, China Sector: Solar Product: Chinese solar-grade polysilicon...

  15. UTICA 4, NEW YORK COFIPOR~TION

    Office of Legacy Management (LM)

    H. J. Zmjian, GE", of the ncmbers of our orzaniza- has a "Q" cl:arance and our President is rcqueoting an 'L" clearance for some of us. -'n would appreciate it very much if you ...

  16. A=17Si (1993TI07)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Si (1993TI07) (Not observed) See (1983ANZQ, 1988WA18, 1992AV03).

  17. Mo-Si alloy development

    SciTech Connect (OSTI)

    Liu, C.T.; Heatherly, L.; Wright, J.L.

    1996-06-01

    The objective of this task is to develop new-generation corrosion-resistant Mo-Si intermetallic alloys as hot components in advanced fossil energy conversion and combustion systems. The initial effort is devoted to Mo{sub 5}-Si{sub 3}-base (MSB) alloys containing boron additions. Three MSB alloys based on Mo-10.5Si-1.1B (wt %), weighing 1500 g were prepared by hot pressing of elemental and alloy powders at temperatures to 1600{degrees}C in vacuum. Microporosities and glassy-phase (probably silicate phases) formations are identified as the major concerns for preparation of MSB alloys by powder metallurgy. Suggestions are made to alleviate the problems of material processing.

  18. EIS-0450: TransWest Express Transmission Project; Wyoming, Colorado, Utah, and Nevada

    Broader source: Energy.gov [DOE]

    This EIS, prepared jointly by DOE's Western Area Power Administration and the Department of the Interior's Bureau of Land Management (Wyoming State Office), evaluates the potential environmental impacts of granting a right-of-way for the TransWest Express Transmission Project and amending a land use plan. The project consists of an overhead transmission line that would extend approximately 725 miles from south-central Wyoming, through Colorado and Utah. Western proposes to be a joint owner of the project.

  19. TRANS4: a computer code calculation of solid fuel penetration of a concrete barrier. [LMFBR; GCFR

    SciTech Connect (OSTI)

    Ono, C. M.; Kumar, R.; Fink, J. K.

    1980-07-01

    The computer code, TRANS4, models the melting and penetration of a solid barrier by a solid disc of fuel following a core disruptive accident. This computer code has been used to model fuel debris penetration of basalt, limestone concrete, basaltic concrete, and magnetite concrete. Sensitivity studies were performed to assess the importance of various properties on the rate of penetration. Comparisons were made with results from the GROWS II code.

  20. Low Activation Joining of SiC/SiC Composites for Fusion Applications: Tape Casting TiC+Si Powders

    SciTech Connect (OSTI)

    Henager, Charles H.; Kurtz, Richard J.; Canfield, Nathan L.; Shin, Yongsoon; Luscher, Walter G.; Mansurov, Jirgal; Roosendaal, Timothy J.; Borlaug, Brennan A.

    2014-03-03

    This work discusses the latest developments in TiC + Si displacement reaction joining at PNNL based on new work to produce tape-cast powders for improved SiC-joints.

  1. Vehicle Technologies Office Merit Review 2014: Transportation Energy Transition Modeling and Analysis: the LAVE-Trans Model

    Broader source: Energy.gov [DOE]

    Presentation given by Oak Ridge National Laboratory at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about the LAVE-Trans...

  2. The HFIR 14J irradiation SiC/SiC composite and SiC fiber collaboration

    SciTech Connect (OSTI)

    Youngblood, G.E.; Jones, R.H.; Kohyama, Akira; Katoh, Yutai; Hasegawa, Akira; Snead, L.; Scholz, R.

    1998-09-01

    A short introduction with references establishes the current status of research and development of SiC{sub f}/SiC composites for fusion energy systems with respect to several key issues. The SiC fiber and composite specimen types selected for the JUPITER 14J irradiation experiment are presented together with the rationale for their selection.

  3. Centrotherm SiQ | Open Energy Information

    Open Energy Info (EERE)

    SiQ Jump to: navigation, search Name: Centrotherm SiQ Place: Germany Product: JV company by SolMic and Centrotherm to design and manufacture 'Siemens type' CVD reactors and STC-TCS...

  4. Effect of Si substrate on interfacial SiO{sub 2} scavenging in HfO{sub 2}/SiO{sub 2}/Si stacks

    SciTech Connect (OSTI)

    Li, Xiuyan, E-mail: xiuyan@adam.t.u-tokyo.ac.jp; Yajima, Takeaki; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2014-11-03

    The scavenging kinetics of an ultra-thin SiO{sub 2} interface layer (SiO{sub 2}-IL) in an HfO{sub 2}/SiO{sub 2}/Si stack is discussed by focusing on the substrate effect in addition to oxygen diffusion. {sup 18}O tracing experiments demonstrate that the O-atom moves from the SiO{sub 2}-IL to the HfO{sub 2} layer during scavenging. SiO{sub 2}-IL scavenging with various substrates (Si, SiC, and sapphire) has been found to be significantly different, which suggests that the Si in the substrate is also necessary to continuously cause the scavenging. Based on these findings and thermodynamic considerations, a kinetic model where oxygen vacancy (V{sub O}) transferred from the HfO{sub 2} reacts with the SiO{sub 2}, which is in contact with the Si-substrate, is proposed for the SiO{sub 2}-IL scavenging.

  5. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect (OSTI)

    Norris, D. J.; Qiu, Y.; Walther, T.; Dobbie, A.; Myronov, M.

    2014-01-07

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1−x}Ge{sub x} alloys for germanium concentrations x ≤ 0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28 < x ≤ 1 form islands after deposition of ∼3.0/x monolayers (=quarter unit cells in the diamond lattice, ML). The uncertainty in the amount of deposited material for pure Ge is ±(0.2–0.3) ML. Modelling shows that of the amount of germanium deposited, 0.7 ML segregate towards the free surface so that only ∼2.3/x ML are directly incorporated in the layer within a few nanometres, in good agreement with our measurements. For pure Ge (x = 1), this thickness is smaller than most values quoted in the literature, which we attribute to the high sensitivity of our method to fractional monolayer changes in the effective chemical width of such thin layers.

  6. Adequacy of the regulatory oversight of the Trans-Alaska pipeline and terminal

    SciTech Connect (OSTI)

    Not Available

    1990-03-01

    The Exxon Valdez spill abruptly brought to the nation's attention the risks of transporting crude oil. While oil tanker transportation received many of the headlines, the safety of pipelines carrying oil and the terminals that store it have also been called into question. GAO testified on the adequacy of regulatory oversight of the 800-mile Trans-Alaska Pipeline System and the terminal at Valdez, Alaska. This paper reports increased and coordinated regulatory oversight as a major component of an effective operational and emergency response strategy for the pipeline. The current lack of comprehensive and systematic oversight is of particular concern because of recent revelations of significant corrosion problems in the pipeline.

  7. si

    Office of Legacy Management (LM)

    ... per minute per 100 square centimeters EML EPA ESSAP ft3 FUSRAP GM ha kg km MeV ZI NBL NIST ORISE PMC ZnS Environmental Measurement Laboratories Environmental Protection ...

  8. Propagation of misfit dislocations from buffer/Si interface into Si

    DOE Patents [OSTI]

    Liliental-Weber, Zuzanna; Maltez, Rogerio Luis; Morkoc, Hadis; Xie, Jinqiao

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  9. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

    SciTech Connect (OSTI)

    Jiang, Xiaofan; Ma, Zhongyuan Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-09-28

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  10. Low Activation Joining of SiC/SiC Composites for Fusion Applications: Tape Casting TiC+Si Powders

    SciTech Connect (OSTI)

    Henager, Charles H.; Kurtz, Richard J.; Canfield, Nathan L.; Shin, Yongsoon; Luscher, Walter G.; Mansurov, Jirgal; Roosendaal, Timothy J.; Borlaug, Brennan A.

    2013-08-06

    The use of SiC composites in fusion environments likely requires joining of plates using reactive joining or brazing. One promising reactive joining method uses solid-state displacement reactions between Si and TiC to produce Ti3SiC2 + SiC. We continue to explore the processing envelope for this joint for the TITAN collaboration in order to produce optimal joints to undergo irradiation studies in HFIR. One noted feature of the joints produced using tape-calendared powders of TiC+Si has been the large void regions that have been apparently unavoidable. Although the produced joints are very strong, these voids are undesirable. In addition, the tapes that were made for this joining were produced about 20 years ago and were aging. Therefore, we embarked on an effort to produce some new tape cast powders of TiC and Si that could replace our aging tape calendared materials.

  11. HIGH-ENERGY NEUTRINO AND GAMMA-RAY TRANSIENTS FROM TRANS-RELATIVISTIC SUPERNOVA SHOCK BREAKOUTS

    SciTech Connect (OSTI)

    Kashiyama, Kazumi; Gao, Shan; Meszaros, Peter [Center for Particle and Gravitational Astrophysics, Department of Astronomy and Astrophysics, Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Murase, Kohta; Horiuchi, Shunsaku, E-mail: kzk15@psu.edu [CCAPP and Department of Physics, Ohio State University, 191 W. Woodruff Avenue, Columbus, OH 43210 (United States)

    2013-05-20

    Trans-relativistic shocks that accompany some supernovae (SNe) produce X-ray burst emissions as they break out in the dense circumstellar medium around the progenitors. This phenomenon is sometimes associated with peculiar low-luminosity gamma-ray bursts (LL GRBs). Here, we investigate the high-energy neutrino and gamma-ray counterparts of such a class of SNe. Just beyond the shock breakout radius, particle acceleration in the collisionless shock starts to operate in the presence of breakout photons. We show that protons may be accelerated to sufficiently high energies and produce high-energy neutrinos and gamma rays via the photomeson interaction. These neutrinos and gamma rays may be detectable from {approx}< 10 Mpc away by IceCube/KM3Net as multi-TeV transients almost simultaneously with the X-ray breakout, and even from {approx}< 100 Mpc away with follow-up observations by the Cherenkov Telescope Array using a wide-field sky monitor like Swift as a trigger. A statistical technique using a stacking approach could also be possible for the detection, with the aid of the SN optical/infrared counterparts. Such multi-messenger observations offer the possibility to probe the transition of trans-relativistic shocks from radiation-mediated to collisionless ones, and would also constrain the mechanisms of particle acceleration and emission in LL GRBs.

  12. Chemical compatibility issues associated with use of SiC/SiC in advanced reactor concepts

    SciTech Connect (OSTI)

    Wilson, Dane F.

    2015-09-01

    Silicon carbide/silicon carbide (SiC/SiC) composites are of interest for components that will experience high radiation fields in the High Temperature Gas Cooled Reactor (HTGR), the Very High Temperature Reactor (VHTR), the Sodium Fast Reactor (SFR), or the Fluoride-cooled High-temperature Reactor (FHR). In all of the reactor systems considered, reactions of SiC/SiC composites with the constituents of the coolant determine suitability of materials of construction. The material of interest is nuclear grade SiC/SiC composites, which consist of a SiC matrix [high-purity, chemical vapor deposition (CVD) SiC or liquid phase-sintered SiC that is crystalline beta-phase SiC containing small amounts of alumina-yttria impurity], a pyrolytic carbon interphase, and somewhat impure yet crystalline beta-phase SiC fibers. The interphase and fiber components may or may not be exposed, at least initially, to the reactor coolant. The chemical compatibility of SiC/SiC composites in the three reactor environments is highly dependent on thermodynamic stability with the pure coolant, and on reactions with impurities present in the environment including any ingress of oxygen and moisture. In general, there is a dearth of information on the performance of SiC in these environments. While there is little to no excess Si present in the new SiC/SiC composites, the reaction of Si with O2 cannot be ignored, especially for the FHR, in which environment the product, SiO2, can be readily removed by the fluoride salt. In all systems, reaction of the carbon interphase layer with oxygen is possible especially under abnormal conditions such as loss of coolant (resulting in increased temperature), and air and/ or steam ingress. A global outline of an approach to resolving SiC/SiC chemical compatibility concerns with the environments of the three reactors is presented along with ideas to quickly determine the baseline compatibility performance of SiC/SiC.

  13. SiD Letter of Intent

    SciTech Connect (OSTI)

    Aihara, H.,; Burrows, P.,; Oreglia, M.,; Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; Zhang, Q.; Srivastava, A.; Butler, J.M.; Goldstein, Joel; Velthuis, J.; Radeka, V.; Zhu, R.-Y.; Lutz, P.; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; /CERN /Cornell U., LNS /Ewha Women's U., Seoul /Fermilab /Gent U. /Darmstadt, GSI /Imperial Coll., London /Barcelona, Inst. Microelectron. /KLTE-ATOMKI /Valencia U., IFIC /Cantabria Inst. of Phys. /Louis Pasteur U., Strasbourg I /Durham U., IPPP /Kansas State U. /Kyungpook Natl. U. /Annecy, LAPP /LLNL, Livermore /Louisiana Tech. U. /Paris U., VI-VII /Paris U., VI-VII /Munich, Max Planck Inst. /MIT, LNS /Chicago, CBC /Moscow State U. /Nanjing U. /Northern Illinois U. /Obninsk State Nucl. Eng. U. /Paris U., VI-VII /Strasbourg, IPHC /Prague, Inst. Phys. /Princeton U. /Purdue U. /Rutherford /SLAC /SUNY, Stony Brook /Barcelona U. /Bonn U. /UC, Davis /UC, Santa Cruz /Chicago U. /Colorado U. /Delhi U. /Hawaii U. /Helsinki U. /Indiana U. /Iowa U. /Massachusetts U., Amherst /Melbourne U. /Michigan U. /Minnesota U. /Mississippi U. /Montenegro U. /New Mexico U. /Notre Dame U. /Oregon U. /Oxford U. /Ramon Llull U., Barcelona /Rochester U. /Santiago de Compostela U., IGFAE /Hefei, CUST /Texas U., Arlington /Texas U., Dallas /Tokyo U. /Washington U., Seattle /Wisconsin U., Madison /Wayne State U. /Yale U. /Yonsei U.

    2012-04-11

    This document presents the current status of the Silicon Detector (SiD) effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R and D needed to provide the technical basis for an optimised SiD.

  14. Experimental estimation of oxidation-induced Si atoms emission on Si(001) surfaces

    SciTech Connect (OSTI)

    Ogawa, Shuichi Tang, Jiayi; Takakuwa, Yuji

    2015-08-15

    Kinetics of Si atoms emission during the oxidation of Si(001) surfaces have been investigated using reflection high energy electron diffraction combined with Auger electron spectroscopy. The area ratio of the 1 × 2 and the 2 × 1 domains on a clean Si(001) surface changed with the oxidation of the surface by Langmuir-type adsorption. This change in the domain ratio is attributed to the emission of Si atoms. We can describe the changes in the domain ratio using the Si emission kinetics model, which states that (1) the emission rate is proportional to the oxide coverage, and (2) the emitted Si atoms migrate on the surface and are trapped at S{sub B} steps. Based on our model, we find experimentally that up to 0.4 ML of Si atoms are emitted during the oxidation of a Si(001) surface at 576 °C.

  15. Structure of Si-capped Ge/SiC/Si (001) epitaxial nanodots: Implications for quantum dot patterning

    SciTech Connect (OSTI)

    Petz, C. W.; Floro, J. A.; Yang, D.; Levy, J.

    2012-04-02

    Artificially ordered quantum dot (QD) arrays, where confined carriers can interact via direct exchange coupling, may create unique functionalities such as cluster qubits and spintronic bandgap systems. Development of such arrays for quantum computing requires fine control over QD size and spatial arrangement on the sub-35 nm length scale. We employ electron-beam irradiation to locally decompose ambient hydrocarbons onto a bare Si (001) surface. These carbonaceous patterns are annealed in ultra-high vacuum (UHV), forming ordered arrays of nanoscale SiC precipitates that have been suggested to template subsequent epitaxial Ge growth to form ordered QD arrays. We show that 3C-SiC nanodots form, in cube-on-cube epitaxial registry with the Si substrate. The SiC nanodots are fully relaxed by misfit dislocations and exhibit small lattice rotations with respect to the substrate. Ge overgrowth at elevated deposition temperatures, followed by Si capping, results in expulsion of the Ge from SiC template sites due to the large chemical and lattice mismatch between Ge and C. Maintaining an epitaxial, low-defectivity Si matrix around the quantum dots is important for creating reproducible electronic and spintronic coupling of states localized at the QDs.

  16. Modification of Mg{sub 2}Si in Mg–Si alloys with gadolinium

    SciTech Connect (OSTI)

    Ye, Lingying; Hu, Jilong Tang, Changping; Zhang, Xinming; Deng, Yunlai; Liu, Zhaoyang; Zhou, Zhile

    2013-05-15

    The modification effect of gadolinium (Gd) on Mg{sub 2}Si in the hypereutectic Mg–3 wt.% Si alloy has been investigated using optical microscope, scanning electron microscope, X-ray diffraction and hardness measurements. The results indicate that the morphology of the primary Mg{sub 2}Si is changed from coarse dendrite into fine polygon with the increasing Gd content. The average size of the primary Mg{sub 2}Si significantly decreases with increasing Gd content up to 1.0 wt.%, and then slowly increases. Interestingly, when the Gd content is increased to 4.0 and 8.0 wt.%, the primary and eutectic Mg{sub 2}Si evidently decrease and even disappear. The modification and refinement of the primary Mg{sub 2}Si is mainly attributed to the poisoning effect. The GdMg{sub 2} phase in the primary Mg{sub 2}Si is obviously coarsened as the Gd content exceeds 2.0 wt.%. While the decrease and disappearance of the primary and eutectic Mg{sub 2}Si are ascribed to the formation of vast GdSi compound. Therefore, it is reasonable to conclude that proper Gd (1.0 wt.%) addition can effectively modify and refine the primary Mg{sub 2}Si. - Highlights: ► Proper Gd (1.0 wt.%) addition can effectively modify and refine the primary Mg{sub 2}Si. ► We studied the reaction feasibility between Mg and Si, Gd and Si in Mg–Gd–Si system. ► We explored the modification mechanism of Gd modifier on Mg{sub 2}Si.

  17. Synthesis of 4-substituted-trans-1, 2-diaminocyclohexyl polyaminocarboxylate metal chelating agents for the preparation of stable radiometal antibody immunoconjugates for therapy and SPECT and PET imaging

    DOE Patents [OSTI]

    Mease, R.C.; Mausner, L.F.; Srivastava, S.C.

    1994-03-08

    Cyclo agents are described which are useful in forming antibody-metal conjugates which are used for diagnostic and therapeutic purposes. New compounds and processes of forming these compounds are disclosed including 4-haloacetamido-trans-1,2diaminocyclohexyl polyaminocarboxylate and 4-isothiocyanato-trans-1,2diamino cyclohexane-N,N,N',N'-tetra acetic acid. No Drawings

  18. Synthesis of 4-substituted-trans-1, 2-diaminocyclohexyl polyaminocarboxylate metal chelating agents for the preparation of stable radiometal antibody immunoconjugates for therapy and spect and pet imaging

    DOE Patents [OSTI]

    Mease, Ronnie C.; Mausner, Leonard F.; Srivastava, Suresh C.

    1994-01-01

    Cyclo agents useful in forming antibody-metal conjugates useful for diagnostic and therapeutic purposes. New compounds and processes of forming these compounds are disclosed including 4-haloacetamido-trans-1,2-diaminocyclohexyl polyaminocarboxylate and 4-isothiocyanato-trans-1,2-diamino cyclohexane-N,N,N',N'-tetra acetic acid.

  19. POTENTIAL EVIDENCE FOR THE ONSET OF ALFVÉNIC TURBULENCE IN TRANS-EQUATORIAL CORONAL LOOPS

    SciTech Connect (OSTI)

    De Moortel, I.; Threlfall, J.; McIntosh, S. W.; Bethge, C.; Liu, J. E-mail: mscott@ucar.edu

    2014-02-20

    This study investigates Coronal Multi-channel Polarimeter Doppler-shift observations of a large, off-limb, trans-equatorial loop system observed on 2012 April 10-11. Doppler-shift oscillations with a broad range of frequencies are found to propagate along the loop with a speed of about 500 km s{sup –1}. The power spectrum of perturbations travelling up from both loop footpoints is remarkably symmetric, probably due to the almost perfect north-south alignment of the loop system. Compared to the power spectrum at the footpoints of the loop, the Fourier power at the apex appears to be higher in the high-frequency part of the spectrum than expected from theoretical models. We suggest this excess high-frequency power could be tentative evidence for the onset of a cascade of the low-to-mid frequency waves into (Alfvénic) turbulence.

  20. Isotropic plasma etching of Ge Si and SiNx films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Henry, Michael David; Douglas, Erica Ann

    2016-05-01

    This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiNx are described with etch rate reductions achieved by adjusting plasma chemistry with O2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiNx etch rates while retarding Ge etching.

  1. Monolayer-induced band shifts at Si(100) and Si(111) surfaces

    SciTech Connect (OSTI)

    Mkinen, A. J. Kim, Chul-Soo; Kushto, G. P.

    2014-01-27

    We report our study of the interfacial electronic structure of Si(100) and Si(111) surfaces that have been chemically modified with various organic monolayers, including octadecene and two para-substituted benzene derivatives. X-ray photoelectron spectroscopy reveals an upward band shift, associated with the assembly of these organic monolayers on the Si substrates, that does not correlate with either the dipole moment or the electron withdrawing/donating character of the molecular moieties. This suggests that the nature and quality of the self-assembled monolayer and the intrinsic electronic structure of the semiconductor material define the interfacial electronic structure of the functionalized Si(100) and Si(111) surfaces.

  2. Inherent interface defects in thermal (211)Si/SiO{sub 2}:{sup 29}Si hyperfine interaction

    SciTech Connect (OSTI)

    Iacovo, Serena E-mail: andre.stesmans@fys.kuleuven.be; Stesmans, Andre E-mail: andre.stesmans@fys.kuleuven.be

    2014-10-21

    Low temperature electron spin resonance (ESR) studies were carried out on ‘higher index’ (211)Si/SiO{sub 2} interfaces thermally grown in the temperature range T{sub ox} = 400–1066°C. The data reveal the presence of two species of a P{sub b}-type interface defect, exhibiting a significant difference in defect density. On the basis of the pertinent ESR parameters and interface symmetry, the basic defect is typified as P{sub b0}{sup (211)}, close to the Pb0 center observed in standard (100)Si/SiO{sub 2}. The dominant type is found to pertain to defected Si atoms at (111)Si-face terraces with the dangling bond along the [111] direction at ∼19.5°C with the interface normal, these sites thus apparently predominantly accounting for interface mismatch adaptation. The total of the P{sub b}-type defect appearance clearly reflects the higher-index nature of the interface. It is found that T{sub ox} = 750°C is required to minimize the P{sub b0}{sup (211)} defect density through relaxation of the oxide (interface). Q-band ESR saturation spectroscopy reveals an anisotropic {sup 29}Si (nuclear spin I=1/2) hyperfine (hf) doublet associated with the central P{sub b0}{sup (211)} Zeeman signal, with hf parameters closest to those of the similar hf structure of the P{sub b0}{sup (110)} defect in thermal (110)Si/SiO{sub 2}, adducing independent support to the P{sub b0}{sup (211)} typification.

  3. Theoretical investigations of two Si-based spintronic materials...

    Office of Scientific and Technical Information (OSTI)

    Title: Theoretical investigations of two Si-based spintronic materials Two Si-based spintronic materials, a Mn-Si digital ferromagnetic heterostructure (delta-layer of Mn doped ...

  4. Theoretical investigations of two Si-based spintronic materials...

    Office of Scientific and Technical Information (OSTI)

    Two Si-based spintronic materials, a Mn-Si digital ferromagnetic heterostructure (delta-layer of Mn doped in Si) with defects and dilutely doped Mnsub xSisub 1-x alloy are ...

  5. Enhancement and Suppression of Photocurrent in Si Photodiodes...

    Office of Scientific and Technical Information (OSTI)

    Enhancement and Suppression of Photocurrent in Si Photodiodes by Nanoparticles and ... Title: Enhancement and Suppression of Photocurrent in Si Photodiodes by Nanoparticles and ...

  6. Sustainable Investments Capital SI Capital | Open Energy Information

    Open Energy Info (EERE)

    Investments Capital SI Capital Jump to: navigation, search Name: Sustainable Investments Capital (SI Capital) Place: Barcelona, Spain Zip: 8021 Sector: Renewable Energy, Services...

  7. Si(hhm) surfaces: Templates for developing nanostructures

    SciTech Connect (OSTI)

    Bozhko, S. I. Ionov, A. M.; Chaika, A. N.

    2015-06-15

    The fabrication of ordered low-dimensional structures on clean and metal-atom-decorated stepped Si(557) and Si(556) surfaces is discussed. The formation conditions and atomic structure of regular step systems on clean Si(557) 7 × 7 and Si(556) 7 × 7 surfaces are studied. The atomic structure of stepped Si(hhm), Ag/Si(557), and Gd/Si(557) surfaces is studied using high-resolution scanning tunneling microscopy and low-energy electron diffraction. The possibility of fabricating 1D and 2D structures of gadolinium and silver atoms on the Si(557) surface is demonstrated.

  8. SiXtron Advanced Materials | Open Energy Information

    Open Energy Info (EERE)

    Materials Jump to: navigation, search Name: SiXtron Advanced Materials Place: Quebec, Canada Website: www.sixtronadvancedmaterials.c References: SiXtron Advanced Materials1...

  9. High-performance Si microwire photovoltaics

    SciTech Connect (OSTI)

    Kelzenberg, Michael D.; Turner-Evans, Daniel B.; Putnam, Morgan C.; Boettcher, Shannon W.; Briggs, Ryan M.; Baek, Jae Y.; Lewis, Nathan S.; Atwater, Harry A.

    2011-01-07

    Crystalline Si wires, grown by the vaporliquidsolid (VLS) process, have emerged as promising candidate materials for low-cost, thin-film photovoltaics. Here, we demonstrate VLS-grown Si microwires that have suitable electrical properties for high-performance photovoltaic applications, including long minority-carrier diffusion lengths (Ln>> 30 m) and low surface recombination velocities (S << 70 cms-1). Single-wire radial pn junction solar cells were fabricated with amorphous silicon and silicon nitride surface coatings, achieving up to 9.0% apparent photovoltaic efficiency, and exhibiting up to ~600 mV open-circuit voltage with over 80% fill factor. Projective single-wire measurements and optoelectronic simulations suggest that large-area Si wire-array solar cells have the potential to exceed 17% energy-conversion efficiency, offering a promising route toward cost-effective crystalline Si photovoltaics.

  10. Solute embrittlement of SiC

    SciTech Connect (OSTI)

    Enrique, Ral A., E-mail: enriquer@umich.edu [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48103 (United States); Van der Ven, Anton, E-mail: avdv@engineering.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2014-09-21

    The energies and stresses associated with the decohesion of ?-SiC in the presence of mobile Pd and Ag impurities are studied from first principles. Density functional theory calculations are parameterized with a generalized cohesive zone model and are analyzed within a thermodynamic framework that accounts for realistic boundary conditions in the presence of mobile impurities. We find that Pd impurities will embrittle SiC when Pd is in equilibrium with metallic Pd precipitates. Our thermodynamic analysis predicts that Pd embrittles SiC by substantially reducing the maximum stress of decohesion as a result of a phase transition between decohering planes involving an influx of Pd atoms. The methods presented in this work can be applied to study the thermodynamics of decohesion of SiC in other aggressive environments containing oxygen and water, for example, and yield environment dependent cohesive zone models for use in continuum approaches to study crack propagation and fracture.

  11. Si Pro AS | Open Energy Information

    Open Energy Info (EERE)

    Pro AS Jump to: navigation, search Name: Si Pro AS Place: Glomfjord, Norway Zip: 8161 Product: Silicon recycler with facility in Singapore. Coordinates: 66.807991, 13.97315...

  12. Transparent conductor-Si pillars heterojunction photodetector

    SciTech Connect (OSTI)

    Yun, Ju-Hyung; Kim, Joondong; Park, Yun Chang

    2014-08-14

    We report a high-performing heterojunction photodetector by enhanced surface effects. Periodically, patterned Si substrates were used to enlarge the photo-reactive regions and yield proportionally improved photo-responses. An optically transparent indium-tin-oxide (ITO) was deposited on a Si substrate and spontaneously formed an ITO/Si heterojunction. Due to an electrical conductive ITO film, ITO/Si heterojunction device can be operated at zero-bias, which effectively suppresses the dark current, resulting in better performances than those by a positive or a negative bias operation. This zero-bias operating heterojunction device exhibits a short response time (? 22.5?ms) due to the physical reaction to the incident light. We revealed that the location of the space charge region (SCR) is crucial for a specific photon-wavelength response. The SCR space has the highest collection efficiency of the photo-generated carriers. The photo-response can be maximized when we design the photodetector by superposing the SCR space over a corresponding photon-absorption length. The surface enhanced Si pillar devices significantly improved the photo-responses ratios from that of a planar Si device. According to this design scheme, a high photo-response ratio of 5560% was achieved at a wavelength of 600?nm. This surfaced-enhanced heterojunction design scheme would be a promising approach for various photoelectric applications.

  13. Roll Casting of Al-25%Si

    SciTech Connect (OSTI)

    Haga, Toshio [Osaka Institute of Technology, Omiya Asahiku Osaka city 535-8585 (Japan); Harada, Hideto [Graduate School of Osaka Institute of Technology, Omiya Asahiku Osaka city 535-8585 (Japan); Watari, Hisaki [Gunma University, Kiryu city, 376-8515 (Japan)

    2011-05-04

    Strip casting of Al-25%Si strip was tried using an unequal diameter twin roll caster. The diameter of the lower roll (large roll) was 1000 mm and the diameter of the upper roll (small roll) was 250 mm. Roll material was mild steel. The sound strip could be cast at the speeds ranging from 8 m/min to 12 m/min. The strip did not stick to the roll without the parting material. The primary Si, which existed at centre area of the thickness direction, was larger than that which existed at other area. The size of the primary Si was smaller than 0.2 mm. Eutectic Si was smaller 5 {mu}m. The as-cast strip was ranging from 2 mm to 3 mm thick and its width was 100 mm. The as-cast strip could be hot rolled down to 1 mm. The hot rolled strip was cold rolled. The primary Si became smaller and the pore occurred around the primary Si after the rolling.

  14. Performance Comparison Study of SiC and Si Technology for an IPM Drive System

    SciTech Connect (OSTI)

    Chinthavali, Madhu Sudhan; Otaduy, Pedro J; Ozpineci, Burak

    2010-01-01

    The impact of the new SiC material based devices on a full system needs to be evaluated in order to assess the benefits of replacing Silicon (Si) devices with WBG devices. In this paper the results obtained with a full-system model simulated for an aggressive US06 drive cycle are presented. The system model includes a motor/generator model and inverter loss model developed using actual measured data. The results provide an insight to the difference in performance of a permanent magnet traction drive system using SiC versus Si devices.

  15. Characterization of SiGe/Si multi-quantum wells for infrared sensing

    SciTech Connect (OSTI)

    Moeen, M.; Salemi, A.; stling, M.; Radamson, H. H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640 Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)] [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

    2013-12-16

    SiGe epitaxial layers are integrated as an active part in thermal detectors. To improve their performance, deeper understanding of design parameters, such as thickness, well periodicity, quality, and strain amount, of the layers/interfaces is required. Oxygen (22500??10{sup ?9}?Torr) was exposed prior or during epitaxy of SiGe/Si multilayers. In this range, samples with 10?nTorr oxygen were processed to investigate layer quality and noise measurements. Temperature coefficient of resistance was also measured to evaluate the thermal response. These results demonstrate sensitivity of SiGe-based devices to size and location of defects in the structure.

  16. ZnO/porous-Si and TiO{sub 2}/porous-Si nanocomposite nanopillars

    SciTech Connect (OSTI)

    Wang, Dong, E-mail: dong.wang@tu-ilmenau.de; Yan, Yong; Schaaf, Peter [Chair Materials for Electronics, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies MacroNano, TU Ilmenau, Gustav-Kirchhoff-Str. 5, 98693 Ilmenau (Germany); Sharp, Thomas [Oxford Instruments Plasma Technology Ltd., Yatton, Bristol BS49 4AP (United Kingdom); Schnherr, Sven; Ronning, Carsten [Institute for Solid State Physics, Friedrich Schiller University Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Ji, Ran [SUSS MicroTec Lithography GmbH, Schleissheimer Str. 90, 85748 Garching (Germany)

    2015-01-01

    Porous Si nanopillar arrays are used as templates for atomic layer deposition of ZnO and TiO{sub 2}, and thus, ZnO/porous-Si and TiO{sub 2}/porous-Si nanocomposite nanopillars are fabricated. The diffusion of the precursor molecules into the inside of the porous structure occurs via Knudsen diffusion and is strongly limited by the small pore size. The luminescence of the ZnO/porous-Si nanocomposite nanopillars is also investigated, and the optical emission can be changed and even quenched after a strong plasma treatment. Such nanocomposite nanopillars are interesting for photocatalysis and sensors.

  17. Application of the Hartmann-Tran profile to precise experimental data sets of C?H?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Forthomme, D.; Cich, M. J.; Twagirayezu, S.; Hall, G. E.; Sears, T. J.

    2015-06-25

    Self- and nitrogen-broadened line shape data for the Pe(11) line of the ?? + ?? band of acetylene, recorded using a frequency comb-stabilized laser spectrometer, have been analyzed using the HartmannTran profile (HTP) line shape model in a multispectrum fitting. In total, the data included measurements recorded at temperatures between 125 K and 296 K and at pressures between 4 and 760 Torr. New, sub-Doppler, frequency comb-referenced measurements of the positions of multiple underlying hot band lines have also been made. These underlying lines significantly affect the Pe(11) line profile at temperatures above 240 K and poorly known frequencies previouslymoreintroduced errors into the line shape analyses. The behavior of the HTP model was compared to the quadratic speed dependent Voigt profile (QSDVP) expressed in the frequency and time domains. A parameter uncertainty analysis was carried out using a Monte Carlo method based on the estimated pressure, transmittance and frequency measurement errors. From the analyses, the Pe(11) line strength was estimated to be 1.2014(50) 10-20 in cm.molecules? units at 296 K with the standard deviation in parenthesis. For analyzing these data, we found that a reduced form of the HTP, equivalent to the QSDVP, was most appropriate because the additional parameters included in the full HTP were not well determined. As a supplement to this work, expressions for analytic derivatives and a lineshape fitting code written in Matlab for the HTP are available.less

  18. Selective deposition of a crystalline Si film by a chemical sputtering...

    Office of Scientific and Technical Information (OSTI)

    Raman spectrum also suggested that Si relatedmore radicals (SiHsub 2, SiH, Si) with high reactivity contribute to the Si film formation. Simple model was derived as the ...

  19. UNITED STATES ATOMIC ENERGY COMMISSION SAC200063~~0oooo Frank K. Pittman, Director, /Division of Waste Management and Trans-

    Office of Legacy Management (LM)

    SAC200063~~0oooo .- Frank K. Pittman, Director, /Division of Waste Management and Trans- portation, Headquarters CONTAMIWATRD EE-AEC-OWNED OR IEASED FACILITIES This memorandum responds to your TWX dated October 30, 1973, requesting certain information on the above subject. Unfortunately, some of the documentation necessary to answer your queries is no Longer available due to the records disposal program or the agreements pre- vailing at the time of release or transfer of the facilities. From

  20. Synthesis of micro-sized interconnected Si-C composites

    DOE Patents [OSTI]

    Wang, Donghai; Yi, Ran; Dai, Fang

    2016-02-23

    Embodiments provide a method of producing micro-sized Si--C composites or doped Si--C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO.sub.x (0

  1. Application to Export Electric Energy OE Docket No. EA-216-C TransAlta Energy Marketing (U.S) Inc Sierra Club Withdrawal Motion

    Broader source: Energy.gov [DOE]

    Withdrawal of Sierra Club motion to intervene on the application to export electric energy OE Docket No. EA-216-C made by TransAlta Energy Marketing (U.S) Inc.

  2. Small-Angle Neutron Scattering Studies of a-Si:H and a-Si:D

    SciTech Connect (OSTI)

    Williamson, D. L.; Marr, D. W. M.; Nelson, B. P.; Iwaniczko, E.; Yang, J.; Yan, B.; Guha, S.

    2000-01-01

    The heterogeneity of hydrogen and deuterium on the nanometer scale has been probed by samll-angle neutron scattering (SANS) from a-Si:H and a-Si:D films. Films were depsoited by two techniques, plasma-enhanced chemical vapor deposition (PECVD) and hot-wire chemical vapor deposition (HWCVD) using conditions that yield high quality films and devices.

  3. Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique

    SciTech Connect (OSTI)

    Demiro?lu, D.; Tatar, B.; Kazmanli, K.; Urgen, M.

    2013-12-16

    Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height ?{sub B}, diode ideality factor ? were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity.

  4. Texture of CoSi2 Films on Si(111) (110) and (001) Substrates

    SciTech Connect (OSTI)

    K De Keyser; C Detavernier; J Jordan-Sweet; C Lavoie

    2011-12-31

    Synchrotron radiation was used to study the texture of polycrystalline CoSi{sub 2} films that were formed by a solid-state reaction between a 30 nm Co film and Si(111), (110) and (001) substrates. All films were strongly textured, and several texture components were identified. We discuss the simultaneous occurrence of axiotaxy (i.e. alignment of lattice planes across the interface) and several different types of epitaxy in each of the films. Comparison of the different texture components observed on the three substrate orientations suggests a strong preference for the alignment of CoSi{sub 2}{l_brace}110{r_brace} planes in the film with Si{l_brace}110{r_brace} planes in the substrate, and twinning around Si[111] directions.

  5. Operational Challenges in Gas-To-Liquid (GTL) Transportation Through Trans Alaska Pipeline System (TAPS)

    SciTech Connect (OSTI)

    Godwin A. Chukwu; Santanu Khataniar; Shirish Patil; Abhijit Dandekar

    2006-06-30

    Oil production from Alaskan North Slope oil fields has steadily declined. In the near future, ANS crude oil production will decline to such a level (200,000 to 400,000 bbl/day) that maintaining economic operation of the Trans-Alaska Pipeline System (TAPS) will require pumping alternative products through the system. Heavy oil deposits in the West Sak and Ugnu formations are a potential resource, although transporting these products involves addressing important sedimentation issues. One possibility is the use of Gas-to-Liquid (GTL) technology. Estimated recoverable gas reserves of 38 trillion cubic feet (TCF) on the North Slope of Alaska can be converted to liquid with GTL technology and combined with the heavy oils for a product suitable for pipeline transport. Issues that could affect transport of this such products through TAPS include pumpability of GTL and crude oil blends, cold restart of the pipeline following a prolonged winter shutdown, and solids deposition inside the pipeline. This study examined several key fluid properties of GTL, crude oil and four selected blends under TAPS operating conditions. Key measurements included Reid Vapor Pressure, density and viscosity, PVT properties, and solids deposition. Results showed that gel strength is not a significant factor for the ratios of GTL-crude oil blend mixtures (1:1; 1:2; 1:3; 1:4) tested under TAPS cold re-start conditions at temperatures above - 20 F, although Bingham fluid flow characteristics exhibited by the blends at low temperatures indicate high pumping power requirements following prolonged shutdown. Solids deposition is a major concern for all studied blends. For the commingled flow profile studied, decreased throughput can result in increased and more rapid solid deposition along the pipe wall, resulting in more frequent pigging of the pipeline or, if left unchecked, pipeline corrosion.

  6. GaP/Si heterojunction Solar Cells

    SciTech Connect (OSTI)

    Saive, R.; Chen, C.; Emmer, H.; Atwater, H.

    2015-05-11

    Improving the efficiency of solar cells requires the introduction of novel device concepts. Recent developments have shown that in Si solar cell technology there is still room for tremendous improvement. Using the heterojunction with intrinsic thin layer (HIT) approach 25.6 % power conversion efficiency was achieved. However, a-Si as a window and passivation layer comes with disadvantages as a-Si shows low conductivity and high parasitic absorption. Therefore, it is likely that using a crystalline material as window layer with high band gab and high mobility can further improve efficiency. We have studied GaP grown by MOCVD on Si with (001) and (112) orientation. We obtained crystalline layers with carrier mobility around 100 cm2/Vs and which passivate Si as confirmed by carrier lifetime measurements. We performed band alignment studies by X-ray photoelectron spectroscopy yielding a valence band offset of 0.3 eV. Comparing this value with the Schottky-model leads to an interface dipole of 0.59 eV. The open circuit voltage increases with increasing doping and is consistent with the theoretical open circuit voltage deduced from work function difference and interface dipole. We obtain an open circuit voltage of 0.38 V for n-doped GaP with doping levels in the order of 10^17 1/cm^3. In our next steps we will increase the doping level further in order to gain higher open circuit voltage. We will discuss the implications of these findings for GaP/Si heterojunction solar cells.

  7. Ag on Si(111) from basic science to application

    SciTech Connect (OSTI)

    Belianinov, Aleksey

    2012-04-04

    In our work we revisit Ag and Au adsorbates on Si(111)-7x7, as well as experiment with a ternary system of Pentacene, Ag and Si(111). Of particular interest to us is the Si(111)-({radical}3x{radical}3)R30{degree}Ag (Ag-Si-{radical}3 hereafter). In this thesis I systematically e plore effects of Ag deposition on the Ag-Si-{radical}3 at different temperatures, film thicknesses and deposition fluxes. The generated insight of the Ag system on the Si(111) is then applied to generate novel methods of nanostructuring and nanowire growth. I then extend our expertise to the Au system on the Ag-Si(111) to gain insight into Au-Si eutectic silicide formation. Finally we explore behavior and growth modes of an organic molecule on the Ag-Si interface.

  8. Comparison of the vacuum-ultraviolet radiation response of HfO{sub 2}/SiO{sub 2}/Si dielectric stacks with SiO{sub 2}/Si

    SciTech Connect (OSTI)

    Upadhyaya, G. S.; Shohet, J. L.

    2007-02-12

    Vacuum ultraviolet (vuv) emitted during plasma processing degrades dielectrics by generating electron-hole pairs. VUV-induced charging of SiO{sub 2}/p-Si and HfO{sub 2}/SiO{sub 2}/p-Si dielectric stacks are compared. For SiO{sub 2}/p-Si, charging is observed for photon energies >15 eV by ionization of dielectric atoms from photoinjected electrons. In HfO{sub 2}/SiO{sub 2}/p-Si, charging is observed for photon >10 eV and is due to ionization by photoinjected electrons and by H{sup +} trapping in the HfO{sub 2}/SiO{sub 2} bulk. Hydrogen appears during annealing at the Si-SiO{sub 2} interface forming Si-H, which, during irradiation, is depassivated by photoinjected electrons. The authors conclude that dielectric charging in thin oxides (<10 nm) occurs more easily in HfO{sub 2}/SiO{sub 2} than in SiO{sub 2}.

  9. Direct growth of graphene on Si(111)

    SciTech Connect (OSTI)

    Thanh Trung, Pham Joucken, Frdric; Colomer, Jean-Franois; Robert, Sporken; Campos-Delgado, Jessica; Raskin, Jean-Pierre; Hackens, Benot; Santos, Cristiane N.

    2014-06-14

    Due to the need of integrated circuit in the current silicon technology, the formation of graphene on Si wafer is highly desirable, but is still a challenge for the scientific community. In this context, we report the direct growth of graphene on Si(111) wafer under appropriate conditions using an electron beam evaporator. The structural quality of the material is investigated in detail by reflection high energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, high resolution scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. Our experimental results confirm that the quality of graphene is strongly dependent on the growth time during carbon atoms deposition.

  10. Unit cell of strained GeSi

    SciTech Connect (OSTI)

    Woicik, J.C.; Bouldin, C.E.; Miyano, K.E.; King, C.A.

    1997-06-01

    The local structure within the unit cell of strained-GeSi layers grown on Si(001) has been examined by polarization-dependent extended x-ray-absorption fine structure. First-neighbor bond lengths are found to deviate only slightly from their unstrained values; however, the distortion of the cubic-unit cell by strain leads to measurable polarization-dependent changes in first-shell coordination and second-shell distances. A unifying picture of bond lengths and elasticity in strained-layer semiconductors is presented. {copyright} {ital 1997} {ital The American Physical Society}

  11. Development of Readout Interconnections for the Si-W Calorimeter of SiD

    SciTech Connect (OSTI)

    Woods, M.; Fields, R.G.; Holbrook, B.; Lander, R.L.; Moskaleva, A.; Neher, C.; Pasner, J.; Tripathi, M.; Brau, J.E.; Frey, R.E.; Strom, D.; Breidenbach, M.; Freytag, D.; Haller, G.; Herbst, R.; Nelson, T.; Schier, S.; Schumm, B.; /UC, Santa Cruz

    2012-09-14

    The SiD collaboration is developing a Si-W sampling electromagnetic calorimeter, with anticipated application for the International Linear Collider. Assembling the modules for such a detector will involve special bonding technologies for the interconnections, especially for attaching a silicon detector wafer to a flex cable readout bus. We review the interconnect technologies involved, including oxidation removal processes, pad surface preparation, solder ball selection and placement, and bond quality assurance. Our results show that solder ball bonding is a promising technique for the Si-W ECAL, and unresolved issues are being addressed.

  12. Thermophysical and mechanical properties of SiC/SiC composites

    SciTech Connect (OSTI)

    Zinkle, S.J.; Snead, L.L.

    1998-09-01

    The key thermophysical and mechanical properties for SiC/SiC composites are summarized, including temperature-dependent tensile properties, elastic constants, thermal conductivity, thermal expansion, and specific heat. The effects of neutron irradiation on the thermal conductivity and dimensional stability (volumetric swelling, creep) of SiC is discussed. The estimated lower and upper temperatures limits for structural applications in high power density fusion applications are 400 and 1000 C due to thermal conductivity degradation and void swelling considerations, respectively. Further data are needed to more accurately determine these estimated temperature limits.

  13. Porous Si structure as moisture sensor

    SciTech Connect (OSTI)

    Peterson, D.W.; Nguyen, L.T.

    1996-12-31

    Development and characterization of a capacitive moisture sensor made from porous Si is presented. The sensor development was in support of the DoD funded Plastic Package Availability program and was intended for the detection of pinholes and defects in moisture barrier coatings applied to ICs during fabrication or during the plastic encapsulation assembly process.

  14. Current Status and Recent Research Achievements in SiC/SiC Composites

    SciTech Connect (OSTI)

    Katoh, Yutai; Snead, Lance L.; Henager, Charles H.; Nozawa, T.; Hinoki, Tetsuya; Ivekovic, Aljaz; Novak, Sasa; Gonzalez de Vicente, Sehila M.

    2014-12-01

    The development and maturation of the silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite system for fusion applications has seen the evolution from fundamental development and understanding of the material system and its behavior in a hostile irradiation environment to the current effort which essentially is a broad-based program of technology, directed at moving this material class from a laboratory curiosity to an engineering material. This paper lays out the recent international scientific and technological achievements in the development of SiC/SiC composite material technologies for fusion application and will discuss future research directions. It also reviews the materials system in the larger context of progress to maturity as an engineering material for both the larger nuclear community and for general engineering applications.

  15. Ni-Si Alloys for the S-I Reactor-Hydrogen Production Process Interface

    SciTech Connect (OSTI)

    Joseph W. Newkirk; Richard K. Brow

    2010-01-21

    The overall goal of this project was to develop Ni-Si alloys for use in vessels to contain hot, pressurized sulfuric acid. The application was to be in the decomposition loop of the thermochemical cycle for production of hydrogen.

  16. SiG Solar GmbH | Open Energy Information

    Open Energy Info (EERE)

    SiG Solar GmbH Jump to: navigation, search Name: SiG Solar GmbH Place: Stuhr-Brinkum, Germany Zip: 28816 Sector: Solar Product: Supplier of mounting systems, and trade name in...

  17. FRV SI Transport Solar LP | Open Energy Information

    Open Energy Info (EERE)

    SI Transport Solar LP Jump to: navigation, search Name: FRV SI Transport Solar LP Place: Arizona References: EIA Form EIA-861 Final Data File for 2010 - File220101 EIA Form 861...

  18. SiC Processing AG | Open Energy Information

    Open Energy Info (EERE)

    SiC Processing AG Jump to: navigation, search Name: SiC Processing AG Place: Hirschau, Germany Zip: 92242 Sector: Solar Product: Offers management and recycling of slurry for solar...

  19. Silicon Genesis Corp SiGen | Open Energy Information

    Open Energy Info (EERE)

    Corp SiGen Jump to: navigation, search Name: Silicon Genesis Corp (SiGen) Place: San Jose, California Zip: 95134 Product: US-based manufacturer of proton-shooting wafer slicing...

  20. Excited-state Raman spectroscopy with and without actinic excitation: S{sub 1} Raman spectra of trans-azobenzene

    SciTech Connect (OSTI)

    Dobryakov, A. L.; Quick, M.; Ioffe, I. N.; Granovsky, A. A.; Ernsting, N. P.; Kovalenko, S. A.

    2014-05-14

    We show that femtosecond stimulated Raman spectroscopy can record excited-state spectra in the absence of actinic excitation, if the Raman pump is in resonance with an electronic transition. The approach is illustrated by recording S{sub 1} and S{sub 0} spectra of trans-azobenzene in n-hexane. The S{sub 1} spectra were also measured conventionally, upon nπ* (S{sub 0} → S{sub 1}) actinic excitation. The results are discussed and compared to earlier reports.

  1. SEGR in SiO$${}_2$$ –Si$_3$ N$_4$ Stacks

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Javanainen, Arto; Ferlet-Cavrois, Veronique; Bosser, Alexandre; Jaatinen, Jukka; Kettunen, Heikki; Muschitiello, Michele; Pintacuda, Francesco; Rossi, Mikko; Schwank, James R.; Shaneyfelt, Marty R.; et al

    2014-04-17

    This work presents experimental SEGR data for MOS-devices, where the gate dielectrics are are made of stacked SiO2–Si3N4 structures. Also a semi-empirical model for predicting the critical gate voltage in these structures under heavy-ion exposure is proposed. Then statistical interrelationship between SEGR cross-section data and simulated energy deposition probabilities in thin dielectric layers is discussed.

  2. SANDIA COKPOK4TION SANDIA BASE, .QLDUQUERQUE. N. M.

    Office of Legacy Management (LM)

    F. k e r s , R. F. Beers, Inc. S. E . J e r m e , Univ. of Nev., Xeno %. L, B r m e , i h z e l t o n Nuclear Science Corp. 0. R. P l a c k , USPXS, Las Vegas, Nev. G. H. H i g ...

  3. SiN-SiC nanofilm: A nano-functional ceramic with bipolar magnetic semiconducting character

    SciTech Connect (OSTI)

    Zhang, Jiahui; Li, Xingxing; Yang, Jinlong

    2014-04-28

    Nowadays, functional ceramics have been largely explored for application in various fields. However, magnetic functional ceramics for spintronics remain little studied. Here, we propose a nano-functional ceramic of sphalerite SiN-SiC nanofilm with intrinsic ferromagnetic order. Based on first principles calculations, the SiN-SiC nanofilm is found to be a ferromagnetic semiconductor with an indirect band gap of 1.71 eV. By mean field theory, the Curie temperature is estimated to be 304 K, close to room temperature. Furthermore, the valence band and conduction band states of the nanofilm exhibit inverse spin-polarization around the Fermi level. Thus, the SiN-SiC nanofilm is a typical bipolar magnetic semiconductor in which completely spin-polarized currents with reversible spin polarization can be created and controlled by applying a gate voltage. Such a nano-functional ceramic provides a possible route for electrical manipulation of carrier's spin orientation.

  4. Nanocrystalline SiC formed by annealing of a-SiC:H on Si substrates: A study of dopant interdiffusion

    SciTech Connect (OSTI)

    Schnabel, Manuel; Weiss, Charlotte; Löper, Philipp; Janz, Stefan; Canino, Mariaconcetta; Summonte, Caterina; Wilshaw, Peter R.

    2014-07-14

    Nanocrystalline silicon carbide (nc-SiC) is an interesting material for electronics applications, both in its own right and as a host matrix for silicon quantum dots. When synthesized by annealing of a-SiC:H on Si substrates, interdiffusion of dopants occurs if either the a-SiC:H or the Si substrate is doped. Annealing a-SiC:H on highly boron-doped substrates at 1100 °C leads to a fairly homogeneous doping level of ≥4 × 10{sup 19} cm{sup −3} throughout the nc-SiC film. An unexpected anomaly in secondary ion mass spectroscopy quantification is observed and a method to circumvent it is shown. The nanostructure of the nc-SiC is only weakly affected as most of the diffusion occurs after the onset of crystallization. Annealing of doped a-SiC:H on Si substrates at 1100 °C leads to strong free carrier absorption at infrared wavelengths. This is demonstrated to originate from dopants that have diffused from the a-SiC:H to the Si substrate, and a method is developed to extract from it the doping profile in the Si substrate. The detection limit of this method is estimated to be ≤6 × 10{sup 13} cm{sup −2}. Doping levels of (0.5–3.5) × 10{sup 19} cm{sup −3} are induced at the Si substrate surface by both boron and phosphorus-doped a–SiC:H. When the Si substrate is doped opposite to the a-SiC:H p–n junctions are induced at a depth of 0.9–1.4 μm within the Si substrate for substrate resistivities of 1–10 Ω cm. Implications for different solar cell architectures are discussed. Dopant diffusion can be strongly reduced by lowering the annealing temperature to 1000 °C, albeit at the expense of reduced crystallinity.

  5. Characterization of SiO{sub 2}/SiN{sub x} gate insulators for graphene based nanoelectromechanical systems

    SciTech Connect (OSTI)

    Tvri, E.; Csontos, M., E-mail: csontos@dept.phy.bme.hu; Krivchy, T.; Csonka, S. [Department of Physics, Budapest University of Technology and Economics and Condensed Matter Research Group of the Hungarian Academy of Sciences, Budafoki t 8, H-1111 Budapest (Hungary); Frjes, P. [MEMS Lab, Institute for Technical Physics and Materials Science, RCNS, HAS, Konkoly-Thege t 29-33, H-1121 Budapest (Hungary)

    2014-09-22

    The structural and magnetotransport characterization of graphene nanodevices exfoliated onto Si/SiO{sub 2}/SiN{sub x} heterostructures are presented. Improved visibility of the deposited flakes is achieved by optimal tuning of the dielectric film thicknesses. The conductance of single layer graphene Hall-bar nanostructures utilizing SiO{sub 2}/SiN{sub x} gate dielectrics were characterized in the quantum Hall regime. Our results highlight that, while exhibiting better mechanical and chemical stability, the effect of non-stoichiometric SiN{sub x} on the charge carrier mobility of graphene is comparable to that of SiO{sub 2}, demonstrating the merits of SiN{sub x} as an ideal material platform for graphene based nanoelectromechanical applications.

  6. Method for enhancing growth of SiO.sub.2 in Si by the implantation of germanium

    DOE Patents [OSTI]

    Holland, Orin W.; Fathy, Dariush; White, Clark W.

    1990-04-24

    A method for enhancing the conversion of Si to SiO.sub.2 in a directional fashion wherein steam or wet oxidation of Si is enhanced by the prior implantation of Ge into the Si. The unique advantages of the Ge impurity include the directional enhancement of oxidation and the reduction in thermal budget, while at the same time, Ge is an electrically inactive impurity.

  7. Interfacing the Ab initio multiple spawning method with electronic structure methods in GAMESS: Photodecay of trans-Azomethane

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gaenko, Alexander; DeFusco, Albert; Varganov, Sergey A.; Martínez, Todd J.; Gordon, Mark S.

    2014-10-20

    This work presents a nonadiabatic molecular dynamics study of the nonradiative decay of photoexcited trans-azomethane, using the ab initio multiple spawning (AIMS) program that has been interfaced with the General Atomic and Molecular Electronic Structure System (GAMESS) quantum chemistry package for on-the-fly electronic structure evaluation. The interface strategy is discussed, and the capabilities of the combined programs are demonstrated with a nonadiabatic molecular dynamics study of the nonradiative decay of photoexcited trans-azomethane. Energies, gradients, and nonadiabatic coupling matrix elements were obtained with the state-averaged complete active space self-consistent field method, as implemented in GAMESS. The influence of initial vibrational excitationmore » on the outcome of the photoinduced isomerization is explored. Increased vibrational excitation in the CNNC torsional mode shortens the excited state lifetime. Depending on the degree of vibrational excitation, the excited state lifetime varies from ~60–200 fs. As a result, these short lifetimes are in agreement with time-resolved photoionization mass spectroscopy experiments.« less

  8. Si-based RF MEMS components.

    SciTech Connect (OSTI)

    Stevens, James E.; Nordquist, Christopher Daniel; Baker, Michael Sean; Fleming, James Grant; Stewart, Harold D.; Dyck, Christopher William

    2005-01-01

    Radio frequency microelectromechanical systems (RF MEMS) are an enabling technology for next-generation communications and radar systems in both military and commercial sectors. RF MEMS-based reconfigurable circuits outperform solid-state circuits in terms of insertion loss, linearity, and static power consumption and are advantageous in applications where high signal power and nanosecond switching speeds are not required. We have demonstrated a number of RF MEMS switches on high-resistivity silicon (high-R Si) that were fabricated by leveraging the volume manufacturing processes available in the Microelectronics Development Laboratory (MDL), a Class-1, radiation-hardened CMOS manufacturing facility. We describe novel tungsten and aluminum-based processes, and present results of switches developed in each of these processes. Series and shunt ohmic switches and shunt capacitive switches were successfully demonstrated. The implications of fabricating on high-R Si and suggested future directions for developing low-loss RF MEMS-based circuits are also discussed.

  9. Magnetoelasticity of Fe-Si single crystals

    SciTech Connect (OSTI)

    Xing, Q; Wu, D.; Lograsso, T. A.

    2010-04-20

    The tetragonal magnetostriction constant, (3/2){lambda}{sub 100}, of Fe-Si single crystals was measured and was found to be structure dependent. Similar to that of Fe-Ge single crystals, (3/2){lambda}{sub 100} is positive in the single phase A2 regime, becomes negative in the single phase D0{sub 3} regime, and changes from positive to negative between the two regimes. Short-range order in the A2 regime decreases the magnetostriction prior to the onset of long range order. In the single phase regions of both A2 and D0{sub 3}, thermal history does not show any obvious effect on the magnetostriction, contrary to that found for Fe-Ga alloys. However, in the regions of phase mixture involving A2, B2, and D0{sub 3} phases, quenching pushes the change in magnetostriction from positive to negative to higher Si contents.

  10. Thermodynamic and kinetic control of the lateral Si wire growth

    SciTech Connect (OSTI)

    Dedyulin, Sergey N. Goncharova, Lyudmila V.

    2014-03-24

    Reproducible lateral Si wire growth has been realized on the Si (100) surface. In this paper, we present experimental evidence showing the unique role that carbon plays in initiating lateral growth of Si wires on a Si (100) substrate. Once initiated in the presence of ?5 ML of C, lateral growth can be achieved in the range of temperatures, T?=?450650?C, and further controlled by the interplay of the flux of incoming Si atoms with the size and areal density of Au droplets. Critical thermodynamic and kinetic aspects of the growth are discussed in detail.

  11. Evaluate Si Layers: Cooperative Research and Development Final Report, CRADA Number CRD-07-255

    SciTech Connect (OSTI)

    Teplin, C.

    2013-04-01

    Evaluate Si layers based on heteroepitaxial Si growth on RABITS textured metal substrates coated with textured buffer layers.

  12. Prediction of Thermal Conductivity for Irradiated SiC/SiC Composites by Informing Continuum Models with Molecular Dynamics Data

    SciTech Connect (OSTI)

    Nguyen, Ba Nghiep; Gao, Fei; Henager, Charles H.; Kurtz, Richard J.

    2014-05-01

    This article proposes a new method to estimate the thermal conductivity of SiC/SiC composites subjected to neutron irradiation. The modeling method bridges different scales from the atomic scale to the scale of a 2D SiC/SiC composite. First, it studies the irradiation-induced point defects in perfect crystalline SiC using molecular dynamics (MD) simulations to compute the defect thermal resistance as a function of vacancy concentration and irradiation dose. The concept of defect thermal resistance is explored explicitly in the MD data using vacancy concentrations and thermal conductivity decrements due to phonon scattering. Point defect-induced swelling for chemical vapor deposited (CVD) SiC as a function of irradiation dose is approximated by scaling the corresponding MD results for perfect crystal ?-SiC to experimental data for CVD-SiC at various temperatures. The computed thermal defect resistance, thermal conductivity as a function of grain size, and definition of defect thermal resistance are used to compute the thermal conductivities of CVD-SiC, isothermal chemical vapor infiltrated (ICVI) SiC and nearly-stoichiometric SiC fibers. The computed fiber and ICVI-SiC matrix thermal conductivities are then used as input for an Eshelby-Mori-Tanaka approach to compute the thermal conductivities of 2D SiC/SiC composites subjected to neutron irradiation within the same irradiation doses. Predicted thermal conductivities for an irradiated Tyranno-SA/ICVI-SiC composite are found to be comparable to available experimental data for a similar composite ICVI-processed with these fibers.

  13. Initial assessment of environmental effects on SiC/SiC composites in helium-cooled nuclear systems

    SciTech Connect (OSTI)

    Contescu, Cristian I

    2013-09-01

    This report summarized the information available in the literature on the chemical reactivity of SiC/SiC composites and of their components in contact with the helium coolant used in HTGR, VHTR and GFR designs. In normal operation conditions, ultra-high purity helium will have chemically controlled impurities (water, oxygen, carbon dioxide, carbon monoxide, methane, hydrogen) that will create a slightly oxidizing gas environment. Little is known from direct experiments on the reactivity of third generation (nuclear grade) SiC/SiC composites in contact with low concentrations of water or oxygen in inert gas, at high temperature. However, there is ample information about the oxidation in dry and moist air of SiC/SiC composites at high temperatures. This information is reviewed first in the next chapters. The emphasis is places on the improvement in material oxidation, thermal, and mechanical properties during three stages of development of SiC fibers and at least two stages of development of the fiber/matrix interphase. The chemical stability of SiC/SiC composites in contact with oxygen or steam at temperatures that may develop in off-normal reactor conditions supports the conclusion that most advanced composites (also known as nuclear grade SiC/SiC composites) have the chemical resistance that would allow them maintain mechanical properties at temperatures up to 1200 1300 oC in the extreme conditions of an air or water ingress accident scenario. Further research is needed to assess the long-term stability of advanced SiC/SiC composites in inert gas (helium) in presence of very low concentrations (traces) of water and oxygen at the temperatures of normal operation of helium-cooled reactors. Another aspect that needs to be investigated is the effect of fast neutron irradiation on the oxidation stability of advanced SiC/SiC composites in normal operation conditions.

  14. Si etching with reactive neutral beams of very low energy

    SciTech Connect (OSTI)

    Hara, Yasuhiro; Hamagaki, Manabu; Mise, Takaya; Iwata, Naotaka; Hara, Tamio

    2014-12-14

    A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF{sub 4} and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate in the acceleration voltage range from 20 V to 80 V. It is considered that low-energy NBs can trigger Si etching because F radicals adsorb onto the Si surface and weaken Si–Si bonds. The etching rate per unit beam flux is 33 times higher than that with Ar NB. These results show that the low-energy reactive NB is useful for damage-free high speed Si etching.

  15. Light emission from Si nanoclusters formed at low temperatures

    SciTech Connect (OSTI)

    Pi, X.D.; Zalloum, O.H.Y.; Roschuk, T.; Wojcik, J.; Knights, A.P.; Mascher, P.; Simpson, P.J.

    2006-03-06

    Photoluminescence (PL) from amorphous Si nanoclusters (Si-ncls) formed by thin-film deposition via electron-cyclotron resonance plasma-enhanced chemical vapor deposition followed by annealing at temperatures {<=}875 deg. C has been investigated. We find that Si-ncls grow very slowly after their initial nucleation at low temperatures. An increase in the size of Si-ncls, which can be controlled by the annealing temperature, induces a redshift in the Si-ncl PL peak. While the emitted optical power is more than 100 times smaller than that of Si nanocrystals formed in an identically deposited film, it is increased by a factor of up to approximately four times following hydrogen passivation. The incorporation of hydrogen causes a redshift in the PL peak position, suggesting a partial hydrogenation induced bond distortion of the Si-ncls. This redshift decreases with increasing hydrogen ambient annealing temperature.

  16. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-02-05

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore » dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

  17. Optimizing the transverse thermal conductivity of 2D-SiCf/SiC composites, II. Experimental

    SciTech Connect (OSTI)

    Youngblood, Gerald E; Senor, David J; Jones, Russell H; Kowbel, W

    2002-12-31

    Model predictions of the transverse thermal conductivity (Keff) are compared to experimentally determined values as a function of temperature for a commercial 2D-SiCf/SiC made by DuPont from plain weave Hi-Nicalon fabric and with an ICVI-SiC matrix. Two versions of the DuPont composite were examined: one with a “thin” and one with a “thick” pyrolytic carbon coating of thickness 0.110 m and 1.044 m, respectively. Generally good agreement of the model predictions with measured values of Keff suggest that these models can be used to predict Keff for composites with various “non-ideal” fiber, interphase and matrix structures. Importantly, the models make it possible to separate the relative component contributions to Keff so that individual component degradation mechanisms can be examined in detail. Then, based on specific knowledge of the component degradation, the models can used to predict Keff-values for composites subjected to irradiation, oxidation, thermal cycling, or other thermal or mechanical stress treatments. Finally, model predictions were examined to suggest specific design and/or development efforts directed to optimize the overall thermal transport performance of 2D-SiCf/SiC.

  18. Oxidation-resistant interface coatings for SiC/SiC composites

    SciTech Connect (OSTI)

    Stinton, D.P.; Kupp, E.R.; Hurley, J.W.

    1996-06-01

    The characteristics of the fiber-matrix interfaces in ceramic matrix composites control the mechanical behavior of these composites. Finite element modeling (FEM) was performed to examine the effect of interface coating modulus and coefficient of thermal expansion on composite behavior. Oxide interface coatings (mullite and alumina-titania) produced by a sol-gel method were chosen for study as a result of the FEM results. Amorphous silicon carbide deposited by chemical vapor deposition (CVD) is also being investigated for interface coatings in SiC-matrix composites. Processing routes for depositing coatings of these materials were developed. Composites with these interfaces were produced and tested in flexure both as-processed and after oxidation to examine the suitability of these materials as interface coatings for SiC/SiC composites in fossil energy applications.

  19. Si/SiGe electron resonant tunneling diodes with graded spacer wells

    SciTech Connect (OSTI)

    Paul, D. J.; See, P.; Bates, R.; Griffin, N.; Coonan, B. P.; Redmond, G.; Crean, G. M.; Zozoulenko, I. V.; Berggren, K.-F.; Hollander, B.

    2001-06-25

    Resonant tunneling diodes have been fabricated using graded Si{sub 1{minus}x}Ge{sub x} (x=0.3{r_arrow}0.0) spacer wells and strained Si{sub 0.4}Ge{sub 0.6} barriers on a relaxed Si{sub 0.7}Ge{sub 0.3} n-type substrate which demonstrates negative differential resistance at up to 100 K. This design is aimed at reducing the voltage at which the peak current density is achieved. Peak current densities of 0.08A/cm{sup 2} with peak-to-valley current ratios of 1.67 have been achieved for a low peak voltage of 40 mV at 77 K. This represents an improvement of over an order of magnitude compared to previous work. {copyright} 2001 American Institute of Physics.

  20. Tin induced a-Si crystallization in thin films of Si-Sn alloys

    SciTech Connect (OSTI)

    Neimash, V. E-mail: oleks.goushcha@nuportsoft.com; Poroshin, V.; Goushcha, A. O. E-mail: oleks.goushcha@nuportsoft.com; Shepeliavyi, P.; Yukhymchuk, V.; Melnyk, V.; Kuzmich, A.; Makara, V.

    2013-12-07

    Effects of tin doping on crystallization of amorphous silicon were studied using Raman scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence techniques. Formation of silicon nanocrystals (24?nm in size) in the amorphous matrix of Si{sub 1?x}Sn{sub x}, obtained by physical vapor deposition of the components in vacuum, was observed at temperatures around 300?C. The aggregate volume of nanocrystals in the deposited film of Si{sub 1?x}Sn{sub x} exceeded 60% of the total film volume and correlated well with the tin content. Formation of structures with ?80% partial volume of the nanocrystalline phase was also demonstrated. Tin-induced crystallization of amorphous silicon occurred only around the clusters of metallic tin, which suggested the crystallization mechanism involving an interfacial molten Si:Sn layer.

  1. Thermal conductivity in nanocrystalline-SiC/C superlattices

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Habermehl, S.; Serrano, J. R.

    2015-11-17

    We reported the formation of thin film superlattices consisting of alternating layers of nitrogen-doped SiC (SiC:N) and C. Periodically terminating the SiC:N surface with a graphitic C boundary layer and controlling the SiC:N/C thickness ratio yield nanocrystalline SiC grains ranging in size from 365 to 23 nm. Frequency domain thermo-reflectance is employed to determine the thermal conductivity, which is found to vary from 35.5 W m-1 K-1 for monolithic undoped α-SiC films to 1.6 W m-1 K-1 for a SiC:N/C superlattice with a 47 nm period and a SiC:N/C thickness ratio of 11. A series conductance model is employed tomore » explain the dependence of the thermal conductivity on the superlatticestructure. Our results indicate that the thermal conductivity is more dependent on the SiC:N/C thickness ratio than the SiC:N grain size, indicative of strong boundary layerphonon scattering.« less

  2. Thermal conductivity in nanocrystalline-SiC/C superlattices

    SciTech Connect (OSTI)

    Habermehl, S.; Serrano, J. R.

    2015-11-17

    We reported the formation of thin film superlattices consisting of alternating layers of nitrogen-doped SiC (SiC:N) and C. Periodically terminating the SiC:N surface with a graphitic C boundary layer and controlling the SiC:N/C thickness ratio yield nanocrystalline SiC grains ranging in size from 365 to 23 nm. Frequency domain thermo-reflectance is employed to determine the thermal conductivity, which is found to vary from 35.5 W m-1 K-1 for monolithic undoped α-SiC films to 1.6 W m-1 K-1 for a SiC:N/C superlattice with a 47 nm period and a SiC:N/C thickness ratio of 11. A series conductance model is employed to explain the dependence of the thermal conductivity on the superlatticestructure. Our results indicate that the thermal conductivity is more dependent on the SiC:N/C thickness ratio than the SiC:N grain size, indicative of strong boundary layerphonon scattering.

  3. Synthesis, electronic and optical properties of Si nanostructures

    SciTech Connect (OSTI)

    Dinh, L.N.

    1996-09-01

    Silicon and silicon oxide nanostructures have been deposited on solid substrates, in an ultra high vacuum (UHV) chamber, by laser ablation or thermal vaporization. Laser ablation followed by substrate post annealing produced Si clusters with average size of a few nanometers, on highly oriented pyrolytic graphite (HOPG) surfaces. This technique, which is based on surface diffusion, is limited to the production of less than one layer of clusters on a given surface. The low coverage of Si clusters and the possibility of nonradiative decay of excitation in the Si cores to the HOPG substrates in these samples rendered them unsuitable for many optical measurements. Thermal vaporization of Si in an Ar buffer gas, on the contrary, yielded multilayer coverage of Si nanoclusters with a fairly narrow size distribution of about 2 nm, full width at half maximum (FWHM). As a result, further study was performed only on Si nanoclusters synthesized by thermal vaporization in a buffer gas. High resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) revealed that these nanoclusters were crystalline. However, during synthesis, if oxygen was the buffer gas, a network of amorphous Si oxide nanostructures (an-SiO{sub x}) with occasional embedded Si dots was formed. All samples showed strong infrared and/or visible photoluminescence (PL) with varying decay times from nanoseconds to microseconds depending on synthesis conditions. There were differences in PL spectra for hydrogen and oxygen passivated nc-Si, while many common PL properties between oxygen passivated nc-Si and an SiO{sub x} were observed. The observed experimental results can be best explained by a model involving absorption between quantum confined states in the Si cores and emission for which the decay times are very sensitive to surface and/or interface states.

  4. Synthesis of 4-substituted-trans-1,2-diaminocyclohexyl polyaminocarboxylate metal chelating agents for the preparation of stable radiometal antibody immunoconjugates for therapy and spect and pet imaging

    DOE Patents [OSTI]

    Mease, Ronnie C.; Kolsky, Kathryn L.; Mausner, Leonard F.; Srivastava, Suresh C.

    1997-06-03

    Cyclohexyl chelating agents useful in forming antibody-metal conjugates useful for diagnostic and therapeutic purposes. New compounds and processes of forming these compounds are disclosed including 4-haloacetamido-trans-1,2-diaminocyclohexyl polyaminocarboxylate and 4-isothiocyanato-trans-1,2-diamino cyclohexane-N, N, N', N'-tetra acetic acid.

  5. Synthesis of 4-substituted-trans-1,2-diaminocyclohexyl polyaminocarboxylate metal chelating agents for the preparation of stable radiometal antibody immunoconjugates for therapy and SPECT and PET imaging

    DOE Patents [OSTI]

    Mease, R.C.; Kolsky, K.L.; Mausner, L.F.; Srivastava, S.C.

    1997-06-03

    Cyclohexyl chelating agents useful in forming antibody-metal conjugates which are used for diagnostic and therapeutic purposes are synthesized. New compounds and processes of forming these compounds are disclosed including 4-haloacetamido-trans-1,2-diaminocyclohexyl polyaminocarboxylate and 4-isothiocyanato-trans-1,2-diamino cyclohexane-N,N,N{prime},N{prime}-tetra acetic acid.

  6. Electron diffraction study of 1M illites with interstratified trans- and cis-vacant 2 : 1 layers

    SciTech Connect (OSTI)

    Zhukhlistov, A. P. Vikent'ev, I. V.; Rusinova, O. V.

    2012-03-15

    Illites from the volcanogenic Zn-Au-Ag sulfide deposit Galkinskoe (Northern Urals) have been investigated using oblique-texture electron diffraction patterns in combination with the simulation of diffraction effects. Along with single-phase tv/cv1M illites, the structures of which are formed by statistically interstratified dioctahedral 2: 1 layers with vacant trans- or cis-octahedra, illites in the form of a mixture of two interstratified tv/cv1M phases, with the dominance of tv- or cv layers, are identified. It is shown that in the latter case the diffraction pattern can also be interpreted within the single-phase tv/cv model, provided that the tv- and cv layers are distributed with some tendency to segregate. The structural features indicating the preference of the two-phase model are analyzed.

  7. West Texas geothermal resource assessment. Part II. Preliminary utilization assessment of the Trans-Pecos geothermal resource. Final report

    SciTech Connect (OSTI)

    Gilliland, M.W.; Fenner, L.B.

    1980-01-01

    The utilization potential of geothermal resources in Trans-Pecos, Texas was assessed. The potential for both direct use and electric power generation were examined. As with the resource assessment work, the focus was on the Hueco Tanks area in northeastern El Paso County and the Presidio Bolson area in Presidio County. Suitable users of the Hueco Tanks and Presidio Bolson resource areas were identified by matching postulated temperature characteristics of the geothermal resource to the need characteristics of existing users in each resource area. The amount of geothermal energy required and the amount of fossil fuel that geothermal energy would replace were calculated for each of the users identified as suitable. Current data indicate that temperatures in the Hueco Tanks resource area are not high enough for electric power generation, but in at least part of the Presidio Bolson resource area, they may be high enough for electric power generation.

  8. Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

    SciTech Connect (OSTI)

    Michon, A.; Vezian, S.; Portail, M.; Ouerghi, A.; Zielinski, M.; Chassagne, T.

    2010-10-25

    We propose to grow graphene on SiC by a direct carbon feeding through propane flow in a chemical vapor deposition reactor. X-ray photoemission and low energy electron diffraction show that propane allows to grow few-layer graphene (FLG) on 6H-SiC(0001). Surprisingly, FLG grown on (0001) face presents a rotational disorder similar to that observed for FLG obtained by annealing on (000-1) face. Thanks to a reduced growth temperature with respect to the classical SiC annealing method, we have also grown FLG/3C-SiC/Si(111) in a single growth sequence. This opens the way for large-scale production of graphene-based devices on silicon substrate.

  9. Phonon-assisted transient electroluminescence in Si

    SciTech Connect (OSTI)

    Cheng, Tzu-Huan, E-mail: f94943139@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan (China); Chu-Su, Yu [Institute of Biomedical Engineering, National Taiwan University, Taipei, Taiwan and Department of Laboratory Medicine, National Taiwan University Hospital, Taipei, Taiwan (China); Liu, Chien-Sheng [Institute of Biomedical Engineering, National Taiwan University, Taipei, Taiwan (China); Lin, Chii-Wann [Institute of Biomedical Engineering and Institute of Electrical Engineering, National Taiwan University, Taipei, Taiwan (China)

    2014-06-30

    The phonon-replica infrared emission is observed at room temperature from indirect band gap Si light-emitting diode under forward bias. With increasing injection current density, the broadened electroluminescence spectrum and band gap reduction are observed due to joule heating. The spectral-resolved temporal response of electroluminescence reveals the competitiveness between single (TO) and dual (TO?+?TA) phonon-assisted indirect band gap transitions. As compared to infrared emission with TO phonon-replica, the retarder of radiative recombination at long wavelength region (?1.2??m) indicates lower transition probability of dual phonon-replica before thermal equivalent.

  10. First-principles study of the Pd–Si system and Pd(001)/SiC(001) hetero-structure

    SciTech Connect (OSTI)

    Turchi, P.E.A.; Ivashchenko, V.I.

    2014-11-01

    First-principles molecular dynamics simulations of the Pd(001)/3C–SiC(001) nano-layered structure were carried out at different temperatures ranging from 300 to 2100 K. Various PdSi (Pnma, Fm3m, P6m2, Pm3m), Pd2Si (P6⁻2m, P63/mmc, P3m1, P3⁻1m) and Pd3Si (Pnma, P6322, Pm3m, I4/mmm) structures under pressure were studied to identify the structure of the Pd/Si and Pd/C interfaces in the Pd/SiC systems at high temperatures. It was found that a large atomic mixing at the Pd/Si interface occurred at 1500–1800 K, whereas the Pd/C interface remained sharp even at the highest temperature of 2100 K. At the Pd/C interface, voids and a graphite-like clustering were detected. Palladium and silicon atoms interact at the Pd/Si interface to mostly form C22-Pd2Si and D011-Pd3Si fragments, in agreement with experiment.

  11. Epitaxial CoSi2 on MOS devices

    DOE Patents [OSTI]

    Lim, Chong Wee; Shin, Chan Soo; Petrov, Ivan Georgiev; Greene, Joseph E.

    2005-01-25

    An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.

  12. Ultra-high current density thin-film Si diode

    DOE Patents [OSTI]

    Wang; Qi

    2008-04-22

    A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

  13. Optimizing the transverse thermal conductivity of 2D-SiCf/SiC composites, I. Modeling

    SciTech Connect (OSTI)

    Youngblood, Gerald E.; Senor, David J.; Jones, Russell H.

    2002-12-31

    For potential fusion applications, considerable fabrication efforts have been directed to obtaining transverse thermal conductivity (Keff) values in excess of 30 W/mK (unirradiated) in the 800-1000°C temperature range for 2D-SiCf/SiC composites. To gain insight into the factors affecting Keff, at PNNL we have tested three different analytic models for predicting Keff in terms of constituent (fiber, matrix and interphase) properties. The tested models were: the Hasselman-Johnson (H-J) “2-Cylinder” model, which examines the effects of fiber-matrix (f/m) thermal barriers; the Markworth “3-Cylinder” model, which specifically examines the effects of interphase thickness and thermal conductivity; and a newly-developed Anisotropic “3-Square” model, which examines the potential effect of introducing a fiber coating with anisotropic properties to enhance (or diminish) f/m thermal coupling. The first two models are effective medium models, while the third model is a simple combination of parallel and series conductances. Model predictions suggest specific designs and/or development efforts directed to optimize the overall thermal transport performance of 2D-SiCf/SiC.

  14. Analysis and recommendations for DPA calculations in SiC

    SciTech Connect (OSTI)

    Heinisch, H.L.

    1998-09-01

    Recent modeling results, coupled with the implications of available experimental results, provide sufficient information to achieve consensus on the values of threshold displacement energies to use in displacements per atom (DPA) calculations. The values recommended here, 20 eV for C and 35 eV for Si, will be presented for adoption by the international fusion materials community at the next IEA SiC/SiC workshop.

  15. Steel-SiC Metal Matrix Composite Development

    SciTech Connect (OSTI)

    Smith, Don D.

    2005-07-17

    The goal of this project is to develop a method for fabricating SiC-reinforced high-strength steel. We are developing a metal-matrix composite (MMC) in which SiC fibers are be embedded within a metal matrix of steel, with adequate interfacial bonding to deliver the full benefit of the tensile strength of the SiC fibers in the composite.

  16. Electronics for the Si detectors in APEX

    SciTech Connect (OSTI)

    Wilt, P.R. |; Betts, R.R.; Freer, M.

    1994-07-01

    APEX (ATLAS Positron EXperiment), a collaborative effort of ANL, FSU, MSU/NSCL, Princeton, Queen`s, Rochester, Washington and Yale, is an experiment to study positron and electron production in very heavy ion collisions. The electrons and positrons are detected with two detector arrays, each consisting of 216 1 mm thick Si PIN diodes, and their energy and time-of-flight are measured. The number of detectors and limited space made it necessary to develop a system that could efficiently process and transfer signals from the detectors to the charge sensing ADC`s and data readout electronics as well as monitor the condition of the detectors. The discussion will cover the electronics designed for the Si detectors, including the charge amplifier, ``Mother board`` for the charge amplifiers, 8 channel Shaper, 16 channel Constant Fraction Discriminator (CFD), 16 channel Peak-to-FERA (PTF) and the integration of the CFD and PTF with Charge sensing ADC`s. Function and performance of the individual modules as well as the system as a whole will be discussed.

  17. Flex Fuel Optimized SI and HCCI Engine

    SciTech Connect (OSTI)

    Zhu, Guoming; Schock, Harold; Yang, Xiaojian; Huisjen, Andrew; Stuecken, Tom; Moran, Kevin; Zhen, Ron; Zhang, Shupeng

    2013-09-30

    The central objective of the proposed work is to demonstrate an HCCI (homogeneous charge compression ignition) capable SI (spark ignited) engine that is capable of fast and smooth mode transition between SI and HCCI combustion modes. The model-based control technique was used to develop and validate the proposed control strategy for the fast and smooth combustion mode transition based upon the developed control-oriented engine; and an HCCI capable SI engine was designed and constructed using production ready two-step valve-train with electrical variable valve timing actuating system. Finally, smooth combustion mode transition was demonstrated on a metal engine within eight engine cycles. The Chrysler turbocharged 2.0L I4 direct injection engine was selected as the base engine for the project and the engine was modified to fit the two-step valve with electrical variable valve timing actuating system. To develop the model-based control strategy for stable HCCI combustion and smooth combustion mode transition between SI and HCCI combustion, a control-oriented real-time engine model was developed and implemented into the MSU HIL (hardware-in-the-loop) simulation environment. The developed model was used to study the engine actuating system requirement for the smooth and fast combustion mode transition and to develop the proposed mode transition control strategy. Finally, a single cylinder optical engine was designed and fabricated for studying the HCCI combustion characteristics. Optical engine combustion tests were conducted in both SI and HCCI combustion modes and the test results were used to calibrate the developed control-oriented engine model. Intensive GT-Power simulations were conducted to determine the optimal valve lift (high and low) and the cam phasing range. Delphi was selected to be the supplier for the two-step valve-train and Denso to be the electrical variable valve timing system supplier. A test bench was constructed to develop control strategies for

  18. Special Inquiry: SI-11-27 | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    November 27, 2006 Selected Controls over Classified Information at the Los Alamos National Laboratory Special Inquiry: SI-11-27 (1.96 MB) More Documents & Publications Special ...

  19. Synthesis and Characterization of Structured Si-Carbon Nanocomposite...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Anodes and Functional Polymer Binders Synthesis and Characterization of Structured Si-Carbon Nanocomposite Anodes and Functional Polymer Binders 2013 DOE Hydrogen and ...

  20. Method for the hydrogenation of poly-si

    DOE Patents [OSTI]

    Wang, Qi

    2013-11-12

    A method for hydrogenating poly-si. Poly-si is placed into the interior of a chamber. A filament is placed into the interior of a chamber. The base pressure of the interior of the chamber is evacuated, preferably to 10.sup.-6 Torr or less. The poly-si is heated for a predetermined poly-si heating time. The filament is heated by providing an electrical power to the filament. Hydrogen is supplied into the pressurized interior of the chamber comprising the heated poly-si and the heated filament. Atomic hydrogen is produced by the filament at a rate whereby the atomic hydrogen surface density at the poly-si is less than the poly-si surface density. Preferably, the poly-si is covered from the atomic hydrogen produced by the heated filament for a first predetermined covering time. Preferably, the poly-si is then uncovered from the atomic hydrogen produced by the heated filament for a first hydrogenation time.

  1. Buckeye Silicon BeSi | Open Energy Information

    Open Energy Info (EERE)

    Name: Buckeye Silicon (BeSi) Place: Toledo, Ohio Product: Ohio-based polysilicon startup focusing on modular production. Coordinates: 46.440613, -122.847838 Show Map...

  2. Synthesis and Characterization of Structured Si-Carbon Nanocomposite...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    More Documents & Publications Novel Lithium Ion Anode Structures: Overview of New DOE BATT Anode Projects Synthesis and Characterization of Structured Si-Carbon Nanocomposite ...

  3. Electrostatic Transfor of Patterned Epitaxial Graphene from SiC...

    Office of Scientific and Technical Information (OSTI)

    Electrostatic Transfor of Patterned Epitaxial Graphene from SiC (001) to Glass. Citation Details In-Document Search Title: Electrostatic Transfor of Patterned Epitaxial Graphene ...

  4. Centrotherm SiTec GmbH | Open Energy Information

    Open Energy Info (EERE)

    Germany Product: Germany-based subsidiary of Centrotherm. The unit provides turnkey manufacturing equipment for polysilicon factory. References: Centrotherm SiTec GmbH1 This...

  5. Hydrogen Evolution at Si-based Metal-Insulator-Semiconductor...

    Office of Scientific and Technical Information (OSTI)

    Hydrogen Evolution at Si-based Metal-Insulator-Semiconductor Photoelectrodes Enhanced by Inversion Channel Charge Collection and Hydrogen Spillover Citation Details In-Document...

  6. Boron doped Si rich oxide/SiO{sub 2} and silicon rich nitride/SiN{sub x} bilayers on molybdenum-fused silica substrates for vertically structured Si quantum dot solar cells

    SciTech Connect (OSTI)

    Lin, Ziyun Wu, Lingfeng; Jia, Xuguang; Zhang, Tian; Puthen-Veettil, Binesh; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-07-28

    Vertically structured Si quantum dots (QDs) solar cells with molybdenum (Mo) interlayer on quartz substrates would overcome current crowding effects found in mesa-structured cells. This study investigates the compatibility between boron (B) doped Si QDs bilayers and Mo-fused silica substrate. Both Si/SiO{sub 2} and Si/SiN{sub x} based QDs bilayers were studied. The material compatibility under high temperature treatment was assessed by examining Si crystallinity, microstress, thin film adhesion, and Mo oxidation. It was observed that the presence of Mo interlayer enhanced the Si QDs size confinement, crystalline fraction, and QDs size uniformity. The use of B doping was preferred compared to phosphine (PH{sub 3}) doping studied previously in terms of better surface and interface properties by reducing oxidized spots on the film. Though crack formation due to thermal mismatch after annealing remained, methods to overcome this problem were proposed in this paper. Schematic diagram to fabricate full vertical structured Si QDs solar cells was also suggested.

  7. Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Diffusion of Fission Product Surrogates

    SciTech Connect (OSTI)

    Henager, Charles H.; Jiang, Weilin

    2014-11-01

    MAX phases, such as titanium silicon carbide (Ti3SiC2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti3SiC2 has been suggested in the literature as a possible fuel cladding material. Prior to the application, it is necessary to investigate diffusivities of fission products in the ternary compound at elevated temperatures. This study attempts to obtain relevant data and make an initial assessment for Ti3SiC2. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti3SiC2, SiC, and a dual-phase nanocomposite of Ti3SiC2/SiC synthesized at PNNL. Thermal annealing and in-situ Rutherford backscattering spectrometry (RBS) were employed to study the diffusivity of the various implanted species in the materials. In-situ RBS study of Ti3SiC2 implanted with Au ions at various temperatures was also performed. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti3SiC2 occurs during ion implantation at 873 K. Cs in Ti3SiC2 is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti3SiC2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Further studies of the related materials are recommended.

  8. Photoluminescence of as-grown and thermal annealed SiO{sub x}/Si-nanocrystals heterolayers grown by reactive rf sputtering

    SciTech Connect (OSTI)

    Mota-Pineda, E.; Melendez-Lira, M.; Zapata-Torres, M.; Angel, P. del; Perez-Centeno, A.; Santana-Aranda, M. A.; Jimenez-Sandoval, S.

    2010-11-15

    SiO{sub x}/Si-nanocrystals (Si NCs) heterolayers were fabricated employing a rf magnetron sputtering system. The synthesis process, through modification of the oxygen partial pressure of the plasma, promotes the synthesis of stoichiometric SiO{sub 2} layers and affect the Si NCs layer giving place to SiO{sub x}/Si NCs (1.64Si NCs. Thermal annealing at 1100 deg. C promoted the SiO{sub 2} stoichiometry in the interface and the crystallization of more Si NCs. The results allow us to clearly identify the origin of the PL bands; indicating that the near-infrared emission is related to the nonstoichiometric oxide while the red and green bands are originated in Si NCs.

  9. Improvement of magnetic and structural stabilities in high-quality Co{sub 2}FeSi{sub 1−x}Al{sub x}/Si heterointerfaces

    SciTech Connect (OSTI)

    Yamada, S.; Tanikawa, K.; Oki, S.; Kawano, M.; Miyao, M.; Hamaya, K.

    2014-08-18

    We study high-quality Co{sub 2}FeSi{sub 1−x}Al{sub x} Heusler compound/Si (0 ≤ x ≤ 1) heterointerfaces for silicon (Si)-based spintronic applications. In thermal treatment conditions, the magnetic and structural stabilities of the Co{sub 2}FeSi{sub 1−x}Al{sub x}/Si heterointerfaces are improved with increasing x in Co{sub 2}FeSi{sub 1−x}Al{sub x}. Compared with L2{sub 1}-ordered Co{sub 2}FeSi/Si, B2-ordered Co{sub 2}FeAl/Si can suppress the diffusion of Si atoms into the Heusler-compound structure. This experimental study will provide an important knowledge for applications in Si-based spin transistors with metallic source/drain contacts.

  10. Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Thermal and Mechanical Properties

    SciTech Connect (OSTI)

    Henager, Charles H.; Alvine, Kyle J.; Roosendaal, Timothy J.; Shin, Yongsoon; Nguyen, Ba Nghiep; Borlaug, Brennan A.; Jiang, Weilin

    2014-04-01

    SiC-polymers (pure polycarbosilane and polycarbosilane filled with SiC-particles) are being combined with Si and TiC powders to create a new class of polymer-derived ceramics for consideration as advanced nuclear materials in a variety of applications. Compared to pure SiC these materials have increased fracture toughness with only slightly reduced thermal conductivity. Future work with carbon nanotube (CNT) mats will be introduced with the potential to increase the thermal conductivity and the fracture toughness. At present, this report documents the fabrication of a new class of monolithic polymer derived ceramics, SiC + SiC/Ti3SiC2 dual phase materials. The fracture toughness of the dual phase material was measured to be significantly greater than Hexoloy SiC using indentation fracture toughness testing. However, thermal conductivity of the dual phase material was reduced compared to Hexoloy SiC, but was still appreciable, with conductivities in the range of 40 to 60 W/(m K). This report includes synthesis details, optical and scanning electron microscopy images, compositional data, fracture toughness, and thermal conductivity data.

  11. Ceramic Technology Project database: September 1990 summary report. [SiC, SiN, whisker-reinforced SiN, ZrO-toughened aluminas, zirconias, joints

    SciTech Connect (OSTI)

    Keyes, B.L.P.

    1992-06-01

    Data generated within the Ceramic Technology Project (CTP) represent a valuable resource for both research and industry. The CTP database was created to provide easy access to this information in electronic and hardcopy forms by using a computerized database and by issuing periodic hardcopy reports on the database contents. This report is the sixth in a series of semiannual database summaries and covers recent additions to the database, including joined brazed specimen test data. It covers 1 SiC, 34 SiN, 10 whisker-reinforced SiN, 2 zirconia-toughened aluminas, 8 zirconias, and 34 joints.

  12. Si?-implanted Si-wire waveguide photodetectors for the mid-infrared

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Souhan, Brian; Lu, Ming; Grote, Richard R.; Chen, Christine P.; Huang, Hsu-Cheng; Driscoll, Jeffrey B.; Stein, Aaron; Bakhru, Hassaram; Bergman, Keren; Green, William M. J.; et al

    2014-10-28

    CMOS-compatible Si?-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 m are demonstrated. Responsivities of 9.9 2.0 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 2.7 4.5%. The dark current is found to vary from a few microamps down to less than a nanoamp after a post-implantation annealing of 350C. The measured photocurrent dependence on input power shows a linear correspondence over more than three decades, and the frequency response of a 250 m-length p-i-n device is measured to be ~1.7 GHz formorea wavelength of ? = 2.2 m, thus potentially opening up new communication bands for photonic integrated circuits.less

  13. Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate

    SciTech Connect (OSTI)

    Ye, Han Yu, Zhongyuan

    2014-11-15

    Patterning pit on Si(001) substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in (105) pits are systematically investigated by solving Schrdinger equation for heavy-hole, which resorts to inhomogeneous strain distribution and nonlinear composition-dependent band parameters. Uniform, partitioned and equilibrium composition profile (CP) in nanoisland and inverted pyramid structure are simulated separately. We demonstrate the huge impact of composition profile on localization of heavy-hole: wave function of ground state is confined near pit facets for uniform CP, at bottom of nanoisland for partitioned CP and at top of nanoisland for equilibrium CP. Moreover, such localization is gradually compromised by the size effect as pit filling ratio or pit size decreases. The results pave the fundamental guideline of designing nanoislands on pit-patterned substrates for desired applications.

  14. Formation and incorporation of SiF{sub 4} molecules in F-implanted preamorphized Si

    SciTech Connect (OSTI)

    De Salvador, D.; Bisognin, G.; Napolitani, E.; Mastromatteo, M.; Baggio, N.; Carnera, A.; Boscherini, F.; Cristiano, F.

    2009-09-07

    The local structure of fluorine incorporated in crystalline silicon following solid phase epitaxial regrowth was investigated by means of x-ray absorption spectroscopy at the F K-edge. We clearly demonstrate that most F is found in SiF{sub 4} molecules in the crystalline matrix. A kinetic pathway, which explains our observation and which is also able to rationalize previous results in a common and coherent framework, is proposed.

  15. Vibrational quasi-degenerate perturbation theory with optimized coordinates: Applications to ethylene and trans-1,3-butadiene

    SciTech Connect (OSTI)

    Yagi, Kiyoshi Otaki, Hiroki

    2014-02-28

    A perturbative extension to optimized coordinate vibrational self-consistent field (oc-VSCF) is proposed based on the quasi-degenerate perturbation theory (QDPT). A scheme to construct the degenerate space (P space) is developed, which incorporates degenerate configurations and alleviates the divergence of perturbative expansion due to localized coordinates in oc-VSCF (e.g., local O–H stretching modes of water). An efficient configuration selection scheme is also implemented, which screens out the Hamiltonian matrix element between the P space configuration (p) and the complementary Q space configuration (q) based on a difference in their quantum numbers (λ{sub pq} = ∑{sub s}|p{sub s} − q{sub s}|). It is demonstrated that the second-order vibrational QDPT based on optimized coordinates (oc-VQDPT2) smoothly converges with respect to the order of the mode coupling, and outperforms the conventional one based on normal coordinates. Furthermore, an improved, fast algorithm is developed for optimizing the coordinates. First, the minimization of the VSCF energy is conducted in a restricted parameter space, in which only a portion of pairs of coordinates is selectively transformed. A rational index is devised for this purpose, which identifies the important coordinate pairs to mix from others that may remain unchanged based on the magnitude of harmonic coupling induced by the transformation. Second, a cubic force field (CFF) is employed in place of a quartic force field, which bypasses intensive procedures that arise due to the presence of the fourth-order force constants. It is found that oc-VSCF based on CFF together with the pair selection scheme yields the coordinates similar in character to the conventional ones such that the final vibrational energy is affected very little while gaining an order of magnitude acceleration. The proposed method is applied to ethylene and trans-1,3-butadiene. An accurate, multi-resolution potential, which combines the MP2 and

  16. Carrier mediated reduction of stiffness in nanoindented crystalline Si(100)

    SciTech Connect (OSTI)

    Kataria, S. Dhara, Sandip Dash, S.; Tyagi, A. K.

    2015-07-21

    We report the observation of carrier mediated decrease in the stiffness of crystalline (c)-Si(100) under nanoindentation. The apparent elastic moduli of heavily doped (∼1 × 10{sup 21} cm{sup −3}) p- and n-type c-Si are observed to be lower by 5.3%–7.5% than the estimated value for intrinsic (∼1 × 10{sup 14} cm{sup −3}) c-Si. The deviation observed with respect to elastic modulus remarkably matches with the estimated value while considering the electronic elastic strain effect on carrier concentration as an influence of negative pressure coefficient of band gap for Si (Γ-X). The value is predominantly higher than the reported value of a decrease of 1%–3% in stiffness as an effect of impurity in c-Si.

  17. Hot metal Si control at Kwangyang blast furnaces

    SciTech Connect (OSTI)

    Hur, N.S.; Cho, B.R.; Kim, G.Y.; Choi, J.S.; Kim, B.H.

    1995-12-01

    Studies of Si transfer in blast furnaces have shown that the Si level in pig iron is influenced more by the reaction of silicon oxide gas generation in the raceway than the chemical reaction between hot metal and slag at the drop zone. Specifications require a Si content of pig iron below 0.15% at the Kwangyang Works, but the use of soft coking coal in the blend for coke ovens, high pulverized coal injection rate into the blast furnace, and the application of lower grade iron ore has resulted in the need to develop methods to control Si in hot metal. In this paper, the results of in furnace Si control and the desiliconization skills at the casthouse floor are described.

  18. Scattering mechanisms in shallow undoped Si/SiGe quantum wells

    SciTech Connect (OSTI)

    Laroche, D.; Nielsen, E.; Lu, T. M.; Huang, S.-H.; Chuang, Y.; Li, J.-Y. Liu, C. W.

    2015-10-15

    We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ∼ 100 nm to ∼ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/semiconductor interface are the dominant scattering source. The power-law exponent of the electron mobility versus density curve, μ ∝ n{sup α}, is extracted as a function of the depth of the Si quantum well. At intermediate densities, the power-law dependence is characterized by α ∼ 2.3. At the highest achievable densities in the quantum wells buried at intermediate depth, an exponent α ∼ 5 is observed. We propose and show by simulations that this increase in the mobility dependence on the density can be explained by a non-equilibrium model where trapped electrons smooth out the potential landscape seen by the two-dimensional electron gas.

  19. Scattering mechanisms in shallow undoped Si/SiGe quantum wells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Laroche, Dominique; Huang, S. -H.; Nielsen, Erik; Chuang, Y.; Li, J. -Y.; Liu, C. W.; Lu, Tzu -Ming

    2015-10-07

    We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ~ 100 nm to ~ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/semiconductor interface are the dominant scattering source. The power-law exponent of the electron mobility versus density curve, μ ∝ nα, is extracted as a function of the depth of the Si quantum well. At intermediate densities, the power-law dependence is characterized by α ~ 2.3. At the highest achievable densities in the quantum wellsmore » buried at intermediate depth, an exponent α ~ 5 is observed. Lastly, we propose and show by simulations that this increase in the mobility dependence on the density can be explained by a non-equilibrium model where trapped electrons smooth out the potential landscape seen by the two-dimensional electron gas.« less

  20. Scattering mechanisms in shallow undoped Si/SiGe quantum wells

    SciTech Connect (OSTI)

    Laroche, Dominique; Huang, S. -H.; Nielsen, Erik; Chuang, Y.; Li, J. -Y.; Liu, C. W.; Lu, Tzu -Ming

    2015-10-07

    We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ~ 100 nm to ~ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/semiconductor interface are the dominant scattering source. The power-law exponent of the electron mobility versus density curve, μ ∝ nα, is extracted as a function of the depth of the Si quantum well. At intermediate densities, the power-law dependence is characterized by α ~ 2.3. At the highest achievable densities in the quantum wells buried at intermediate depth, an exponent α ~ 5 is observed. Lastly, we propose and show by simulations that this increase in the mobility dependence on the density can be explained by a non-equilibrium model where trapped electrons smooth out the potential landscape seen by the two-dimensional electron gas.

  1. Mechanistic Selection and Growth of Twinned Bicrystalline Primary Si in Near Eutectic Al-Si Alloys

    SciTech Connect (OSTI)

    Choonho Jung

    2006-12-12

    Morphological evolution and selection of angular primary silicon is investigated in near-eutectic Al-Si alloys. Angular silicon arrays are grown directionally in a Bridgman furnace at velocities in the regime of 10{sup -3} m/sec and with a temperature gradient of 7.5 x 10{sup 3} K/m. Under these conditions, the primary Si phase grows as an array of twinned bicrystalline dendrites, where the twinning gives rise to a characteristic 8-pointed star-shaped primary morphology. While this primary Si remains largely faceted at the growth front, a complex structure of coherent symmetric twin boundaries enables various adjustment mechanisms which operate to optimize the characteristic spacings within the primary array. In the work presented here, this primary silicon growth morphology is examined in detail. In particular, this thesis describes the investigation of: (1) morphological selection of the twinned bicrystalline primary starshape morphology; (2) primary array behavior, including the lateral propagation of the starshape grains and the associated evolution of a strong <100> texture; (3) the detailed structure of the 8-pointed star-shaped primary morphology, including the twin boundary configuration within the central core; (4) the mechanisms of lateral propagation and spacing adjustment during array evolution; and (5) the thermosolutal conditions (i.e. operating state) at the primary growth front, including composition and phase fraction in the vicinity of the primary tip.

  2. Resonant tunneling with high peak to valley current ratio in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers at room temperature

    SciTech Connect (OSTI)

    Chen, D. Y.; Sun, Y.; He, Y. J.; Xu, L.; Xu, J.

    2014-01-28

    We have investigated carrier transport in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers by room temperature current-voltage measurements. Resonant tunneling signatures accompanied by current peaks are observed. Carrier transport in the multi-layers were analyzed by plots of ln(I/V{sup 2}) as a function of 1/V and ln(I) as a function of V{sup 1/2}. Results suggest that besides films quality, nc-Si and barrier sub-layer thicknesses are important parameters that restrict carrier transport. When thicknesses are both small, direct tunneling dominates carrier transport, resonant tunneling occurs only at certain voltages and multi-resonant tunneling related current peaks can be observed but with peak to valley current ratio (PVCR) values smaller than 1.5. When barrier thickness is increased, trap-related and even high field related tunneling is excited, causing that multi-current peaks cannot be observed clearly, only one current peak with higher PVCR value of 7.7 can be observed. While if the thickness of nc-Si is large enough, quantum confinement is not so strong, a broad current peak with PVCR value as high as 60 can be measured, which may be due to small energy difference between the splitting energy levels in the quantum dots of nc-Si. Size distribution in a wide range may cause un-controllability of the peak voltages.

  3. In situ study of the endotaxial growth of hexagonal CoSi{sub 2} nanoplatelets in Si(001)

    SciTech Connect (OSTI)

    Silva Costa, Daniel da; Kellermann, Guinther; Huck-Iriart, Cristián; Giovanetti, Lisandro J.; Requejo, Félix G.

    2015-11-30

    This investigation aims at studying–by in situ grazing-incidence small-angle x-ray scattering–the process of growth of hexagonal CoSi{sub 2} nanoplatelets endotaxially buried in a Si(001) wafer. The early formation of spherical Co nanoparticles with bimodal size distribution in the deposited silica thin film during a pretreatment at 500 °C and their subsequent growth at 700 °C were also characterized. Isothermal annealing at 700 °C promotes a drastic reduction in the number of the smallest Co nanoparticles and a continuous decrease in their volume fraction in the silica thin film. At the same time, Co atoms diffuse across the SiO{sub 2}/Si(001) interface into the silicon wafer, react with Si, and build up thin hexagonal CoSi{sub 2} nanoplatelets, all of them with their main surfaces parallel to Si(111) crystallographic planes. The observed progressive growths in thickness and lateral size of the hexagonal CoSi{sub 2} nanoplatelets occur at the expense of the dissolution of the small Co nanoparticles that are formed during the pretreatment at 500 °C and become unstable at the annealing temperature (700 °C). The kinetics of growth of the volume fraction of hexagonal platelets is well described by the classical Avrami equation.

  4. Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

    SciTech Connect (OSTI)

    Liu, Gang; Xu, Can; Feldman, Leonard C.; Yakshinskiy, Boris; Wielunski, Leszek; Gustafsson, Torgny; Bloch, Joseph; Dhar, Sarit

    2014-11-10

    We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D{sub 2}O) on the n-type 4H-SiC carbon face (0001{sup }) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D{sub 2}O exposure is proportional to the total D amount at the interface.

  5. Reaction-bonding preparation of Si{sub 3}N{sub 4}/MoSi{sub 2} and Si{sub 3}N{sub 4}/WSi{sub 2} composites from elemental powders

    SciTech Connect (OSTI)

    Zhang, B.R.; Marino, F.

    1997-01-01

    Si{sub 3}N{sub 4}/MoSi{sub 2} and Si{sub 3}N{sub 4}/WSi{sub 2} composites were prepared by reaction-bonding processes using as starting materials powder mixtures of Si-Mo and Si-W, respectively. A presintering step in an Ar-base atmosphere was used before nitriding for the formation of MoSi{sub 2} and WSi{sub 2}; the nitridation in a N{sub 2}-base atmosphere was followed after presintering with the total stepwise cycle of 1,350 C {times} 20 h + 1,400 C {times} 20 h + 1,450 C {times} 2 h. The final phases obtained in the two different composites were Si{sub 3}N{sub 4} and MoSi{sub 2} or WSi{sub 2}; no free elemental Si and Mo or W were detected by X-ray diffraction.

  6. Reaction of Si(111) Surface with Saturated Hydrocarbon

    SciTech Connect (OSTI)

    Suryana, Risa; Nakahara, Hitoshi; Saito, Yahachi; Ichimiya, Ayahiko

    2011-12-10

    Reaction of Si(111) surface with saturated hydrocarbon such as methane (CH{sub 4}) and ethane (C{sub 2}H{sub 6}) was carried out in a gas source molecular beam epitaxy (GSMBE). After carbonization, structures formed on the surface were observed by in situ reflection high-energy electron diffraction (RHEED). Structures transition formed on the surface were 7x7, {delta}-7x7, 1x1, and SiC structures. In the case of CH{sub 4}, the Si surfaces were carbonized at 800 deg. C for 120 min (7.2x10{sup 4} L) with a W-filament of 2800 deg. C, and SiC layers were obtained. In the case of C{sub 2}H{sub 6}, the mixture of 7x7 and SiC structure was observed. Decomposition of hydrocarbon was characterized in quadrupole mass spectroscopy (QMS) measurements. An atomic force microscopy (AFM) image of the mixture of 7x7 and SiC shows a wandering shape. Whereas, the SiC layer shows a regular step. This result seems to be related to the different in the amount of CH{sub 3} molecules on the surface.

  7. Magnetic order and crystal structure study of YNi{sub 4}Si-type NdNi{sub 4}Si

    SciTech Connect (OSTI)

    Yao, Jinlei; Isnard, O.; Morozkin, A.V.; Ivanova, T.I.; Koshkid'ko, Yu.S.; Bogdanov, A.E.; Nikitin, S.A.; Suski, W.

    2015-02-15

    Magnetic measurements and neutron powder diffraction investigation of the magnetic structure of the orthorhombic YNi{sub 4}Si-type (space group Cmmm) NdNi{sub 4}Si compound are presented. The magnetocaloric effect of NdNi{sub 4}Si is calculated in terms of the isothermal magnetic entropy change and it reaches the maximum value of –3.3 J/kg K for a field change of 50 kOe near T{sub C}=12 K. Below ∼12 K, NdNi{sub 4}Si exhibits a commensurate b-axis collinear ferromagnetic ordering with the Cmm′m magnetic space group in a zero magnetic field. At 1.5 K, the neodymium atoms have the magnetic moment of 2.37(5) μ{sub B}. The orthorhombic crystal structure and its thermal evolution are discussed in comparison with the CaCu{sub 5}-type compound. - Graphical abstract: The NdNi{sub 4}Si supplement the series of the orthorhombic derivative of the CaCu{sub 5}-type, namely the YNi{sub 4}Si-type, RNi{sub 4}Si compounds (R=Y, La, Ce, Sm, Gd–Ho). Below ∼12 K in a zero applied magnetic field, NdNi{sub 4}Si exhibits a commensurate b-axis collinear ferromagnetic ordering with the Cmm′m magnetic space group. Compared to the CaCu{sub 5}-type NdNi{sub 4}Si compound, the YNi{sub 4}Si-type counterpart has the relatively high ferromagnetic ordering temperature (9.2 K vs. 12 K), the small magnetocaloric effect (–7.3 J/kg K vs. –3.3 J/kg K for ∆H=50 kOe), and the large magnetic anisotropy at low temperatures. In contrast with CaCu{sub 5}-type NdNi{sub 4}Si, YNi{sub 4}Si-type NdNi{sub 4}Si shows distinct hysteresis loop at 2 K.We suggest that orthorhombic distortion may be used as a prospective route for optimization of permanent magnetic properties in the family of CaCu{sub 5}-type rare earth materials. - Highlights: • Below ∼12 K the YNi{sub 4}Si-type NdNi{sub 4}Si shows a ferromagnetic ordering. • MCE of NdNi{sub 4}Si reaches value of –3.3 J/kg K in 0–50 kOe near Curie point. • NdNi{sub 4}Si exhibits b-axis ferromagnetic order with the Cmm′m magnetic space

  8. Asia Silicon Qinghai Co Ltd aka Asia Si Material | Open Energy...

    Open Energy Info (EERE)

    Silicon Qinghai Co Ltd aka Asia Si Material Jump to: navigation, search Name: Asia Silicon (Qinghai) Co Ltd (aka Asia Si Material) Place: Xining, Qinghai Province, China Zip:...

  9. Development of an SI DI Ethanol Optimized Flex Fuel Engine Using...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    an SI DI Ethanol Optimized Flex Fuel Engine Using Advanced Valvetrain Development of an SI DI Ethanol Optimized Flex Fuel Engine Using Advanced Valvetrain Presentation given at the ...

  10. Stereochemical effects in the gas-phase pinacol rearrangement. 2. Ring contraction versus methyl migration in cis- and trans-1,2-dimethylcyclohexane-1,2-diol

    SciTech Connect (OSTI)

    de Petris, G.; Giacomello, P.; Pizzabiocca, A.; Renzi, G.; Speranza, M.

    1988-02-17

    The gas-phase pinacol rearrangement of cis- and trans-1,2-dimethylcyclohexane-1,2-diols, promoted by D/sub 3//sup +/, CH/sub 5//sup +//C/sub 2/H/sub 5//sup +/ and t-C/sub 4/H/sub 9//sup +/ ions, was studied by mass spectrometric and radiolytic methods in the pressure range 0.5-760 Torr. When product isomerization is inhibited, by using N(CH/sub 3/)/sub 3/ as a trapping reagent at high pressure, mixtures of 2,2-dimethylcyclohexanone and 1-acetyl-1-methylcyclopentane were recovered from the reaction. In methane, the trend of the measured relative rates for ring contraction (k/sub 5/), methyl or hydroxyl group migration (k/sub 6/) versus the rearrangement rate of pincaol itself (k/sub p/), is k/sub 6/(trans) approx. k/sub 5/(trans) greater than or equal to k/sub 5/(cis) > k/sub 6/(cis) greater than or equal to k/sub p/. No evidence for the formation of an intermediate carbenium ion was found. Stereochemical aspects of the mechanism are discussed and compared with solution data.

  11. Hail Impact Testing on Crystalline Si Modules with Flexible Packaging |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Hail Impact Testing on Crystalline Si Modules with Flexible Packaging Hail Impact Testing on Crystalline Si Modules with Flexible Packaging Presented at the PV Module Reliability Workshop, February 26 - 27 2013, Golden, Colorado pvmrw13_ps2_westpak_brown.pdf (785.64 KB) More Documents & Publications Test Procedure for UV Weathering Resistance of Backsheet The Acceleration of Degradation by HAST and Air-HAST in c-Si PV Modules Improved Reliability of PV Modules with

  12. 14.11.05 RH Stabilized Si Microwire - JCAP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stabilized Si Microwire Arrays for Solar-Driven H2O Oxidation Shaner, M. R., Hu, S., Sun, K. & Lewis, N. S. Stabilization of Si microwire arrays for solar-driven H2O oxidation to O2(g) in 1.0 M KOH(aq) using conformal coatings of amorphous TiO2. Energy & Environmental Science 8, 203-207, DOI: 10.1039/c4ee03012e (2015). Scientific Achievement Atomic-layer deposition of TiO2combined with sputtering of NiCrOxoxygen-evolution catalyst on Si microwires yields robust microwire-array

  13. Endotaxially stabilized B2-FeSi nanodots in Si (100) via ion beam co-sputtering

    SciTech Connect (OSTI)

    Cassidy, Cathal Singh, Vidyadhar; Grammatikopoulos, Panagiotis; Kioseoglou, Joseph; Lal, Chhagan; Sowwan, Mukhles

    2014-04-21

    We report on the formation of embedded B2-FeSi nanodots in [100]-oriented Si substrates, and investigate the crystallographic mechanism underlying the stabilization of this uncommon, bulk-unstable, phase. The nanodots were approximately 10 nm in size, and were formed by iron thin film deposition and subsequent annealing. Cross-sectional transmission electron microscopy, energy loss spectroscopy mapping, and quantitative image simulation and analysis were utilized to identify the phase, strain, and orientational relationship of the nanodots to the host silicon lattice. X-ray photoelectron spectroscopy was utilized to analyze the surface composition and local bonding. Elasticity calculations yielded a nanodot residual strain value of −18%. Geometrical phase analysis graphically pinpointed the positions of misfit dislocations, and clearly showed the presence of pinned (11{sup ¯}1{sup ¯}){sub Si}//(100){sub FeSi}, and unpinned (2{sup ¯}42){sub Si}//(010){sub FeSi}, interfaces. This partial endotaxy in the host silicon lattice was the mechanism that stabilized the B2-FeSi phase.

  14. A low thermal impact annealing process for SiO{sub 2}-embedded Si nanocrystals with optimized interface quality

    SciTech Connect (OSTI)

    Hiller, Daniel Gutsch, Sebastian; Hartel, Andreas M.; Zacharias, Margit; Löper, Philipp; Gebel, Thoralf

    2014-04-07

    Silicon nanocrystals (Si NCs) for 3rd generation photovoltaics or optoelectronic applications can be produced by several industrially compatible physical or chemical vapor deposition technologies. A major obstacle for the integration into a fabrication process is the typical annealing to form and crystallize these Si quantum dots (QDs) which involves temperatures ≥1100  °C for 1 h. This standard annealing procedure allows for interface qualities that correspond to more than 95% dangling bond defect free Si NCs. We study the possibilities to use rapid thermal annealing (RTA) and flash lamp annealing to crystallize the Si QDs within seconds or milliseconds at high temperatures. The Si NC interface of such samples exhibits huge dangling bond defect densities which makes them inapplicable for photovoltaics or optoelectronics. However, if the RTA high temperature annealing is combined with a medium temperature inert gas post-annealing and a H{sub 2} passivation, luminescent Si NC fractions of up to 90% can be achieved with a significantly reduced thermal load. A new figure or merit, the relative dopant diffusion length, is introduced as a measure for the impact of a Si NC annealing procedure on doping profiles of device structures.

  15. SiLas GmbH | Open Energy Information

    Open Energy Info (EERE)

    Product: Laser technology development enterprise specialising in the processing of thin-film silicon coating. References: SiLas GmbH1 This article is a stub. You can help...

  16. Native defects in Tl6SI4: Density functional calculations

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shi, Hongliang; Du, Mao -Hua

    2015-05-05

    In this study, Tl6SI4 is a promising room-temperature semiconductor radiation detection material. Here, we report density functional calculations of native defects and dielectric properties of Tl6SI4. Formation energies and defect levels of native point defects and defect complexes are calculated. Donor-acceptor defect complexes are shown to be abundant in Tl6SI4. High resistivity can be obtained by Fermi level pinning by native donor and acceptor defects. Deep donors that are detrimental to electron transport are identified and methods to mitigate such problem are discussed. Furthermore, we show that mixed ionic-covalent character of Tl6SI4 gives rise to enhanced Born effective charges andmore » large static dielectric constant, which provides effective screening of charged defects and impurities.« less

  17. 14.11.05 RH Stabilized Si Microwire - JCAP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stabilized Si Microwire Arrays for Solar-Driven H2O Oxidation Shaner, M. R., Hu, S., Sun, ... O2 for >2200 h with near 100% Faradaic efficiency under simulated 1 Sun illumination. ...

  18. Moment enhancement in dilute magnetic semiconductors: MnxSi1...

    Office of Scientific and Technical Information (OSTI)

    Moment enhancement in dilute magnetic semiconductors: MnxSi1-x with x 0.1% Citation Details In-Document Search Title: Moment enhancement in dilute magnetic semiconductors: ...

  19. Crystallization from high temperature solutions of Si in copper

    DOE Patents [OSTI]

    Ciszek, Theodore F.

    1994-01-01

    A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 5X10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution melt of Si in Cu at about 16% to about 90% wt. Si at a temperature range of about 800.degree. C. to about 1400.degree. C. in an inert gas; immersing a substrate in the saturated solution melt; supersaturating the solution by lowering the temperature of the saturated solution melt and holding the substrate immersed in the solution melt for a period of time sufficient to cause growing Si to precipitate out of the solution to form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.

  20. SiXtron Advanced Materials Inc | Open Energy Information

    Open Energy Info (EERE)

    to: navigation, search Name: SiXtron Advanced Materials Inc Place: Dorval, Quebec, Canada Zip: H9P 1J1 Product: Canadian manufacturer of anti-reflective coating capital...

  1. THE PECULIAR PHOTOMETRIC PROPERTIES OF 2010 WG9: A SLOWLY ROTATING TRANS-NEPTUNIAN OBJECT FROM THE OORT CLOUD

    SciTech Connect (OSTI)

    Rabinowitz, David; Schwamb, Megan E.; Hadjiyska, Elena; Tourtellotte, Suzanne; Rojo, Patricio

    2013-07-01

    We present long-term BVRI observations of 2010 WG9, an {approx}100 km diameter trans-Neptunian object (TNO) with an extremely high inclination of 70 Degree-Sign discovered by the La Silla-QUEST southern sky survey. Most of the observations were obtained with ANDICAM on the SMARTS 1.3 m at Cerro Tololo, Chile from 2010 December to 2012 November. Additional observations were made with EFOSC2 on the 3.5 m NTT telescope of the European Southern Observatory at La Silla, Chile in 2011 February. The observations reveal a sinusoidal light curve with amplitude 0.14 mag and period 5.4955 {+-} 0.0025 days, which is likely half the true rotation period. Such long rotation periods have previously been observed only for tidally evolved binary TNOs, suggesting that 2010 WG9 may be such a system. We predict a nominal separation of at least 790 km, resolvable with the Hubble Space Telescope and ground-based systems. We measure B - R = 1.318 {+-} 0.029 and V - R = 0.520 {+-} 0.018, consistent with the colors of modestly red Centaurs and Damocloids. At I-band wavelengths, we observe an unusually large variation of color with rotational phase, with R - I ranging from 0.394 {+-} 0.025 to 0.571 {+-} 0.044. We also measure an absolute R-band absolute magnitude of 7.93 {+-} 0.05 and solar phase coefficient of 0.049 {+-} 0.019 mag deg{sup -1}.

  2. Application of the Hartmann–Tran profile to precise experimental data sets of 12C2H2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Forthomme, D.; Cich, M. J.; Twagirayezu, S.; Hall, G. E.; Sears, T. J.

    2015-06-25

    Self- and nitrogen-broadened line shape data for the Pe(11) line of the ν₁ + ν₃ band of acetylene, recorded using a frequency comb-stabilized laser spectrometer, have been analyzed using the Hartmann–Tran profile (HTP) line shape model in a multispectrum fitting. In total, the data included measurements recorded at temperatures between 125 K and 296 K and at pressures between 4 and 760 Torr. New, sub-Doppler, frequency comb-referenced measurements of the positions of multiple underlying hot band lines have also been made. These underlying lines significantly affect the Pe(11) line profile at temperatures above 240 K and poorly known frequencies previouslymore » introduced errors into the line shape analyses. Thus, the behavior of the HTP model was compared to the quadratic speed dependent Voigt profile (QSDVP) expressed in the frequency and time domains. A parameter uncertainty analysis was carried out using a Monte Carlo method based on the estimated pressure, transmittance and frequency measurement errors. From the analyses, the Pe(11) line strength was estimated to be 1.2014(50) × 10-20 in cm.molecules⁻¹ units at 296 K with the standard deviation in parenthesis. For analyzing these data, we found that a reduced form of the HTP, equivalent to the QSDVP, was most appropriate because the additional parameters included in the full HTP were not well determined. As a supplement to this work, expressions for analytic derivatives and a lineshape fitting code written in Matlab for the HTP are available.« less

  3. Thermal decomposition of silane to form hydrogenated amorphous Si film

    DOE Patents [OSTI]

    Strongin, Myron; Ghosh, Arup K.; Wiesmann, Harold J.; Rock, Edward B.; Lutz, III, Harry A.

    1980-01-01

    This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.

  4. Thermal decomposition of silane to form hydrogenated amorphous Si

    DOE Patents [OSTI]

    Strongin, M.; Ghosh, A.K.; Wiesmann, H.J.; Rock, E.B.; Lutz, H.A. III

    Hydrogenated amorphous silicon is produced by thermally decomposing silane (SiH/sub 4/) or other gases comprising H and Si, at elevated temperatures of about 1700 to 2300/sup 0/C, in a vacuum of about 10/sup -8/ to 10/sup -4/ torr. A gaseous mixture is formed of atomic hydrogen and atomic silicon. The gaseous mixture is deposited onto a substrate to form hydrogenated amorphous silicon.

  5. Synthesis and characterization in AuCu–Si nanostructures

    SciTech Connect (OSTI)

    Novelo, T.E.; Amézaga-Madrid, P.; Maldonado, R.D.; Oliva, A.I.; Alonzo-Medina, G.M.

    2015-03-15

    Au/Cu bilayers with different Au:Cu concentrations (25:75, 50:50 and 75:25 at.%) were deposited on Si(100) substrates by thermal evaporation. The thicknesses of all Au/Cu bilayers were 150 nm. The alloys were prepared by thermal diffusion into a vacuum oven with argon atmosphere at 690 K during 1 h. X-ray diffraction analysis revealed different phases of AuCu and CuSi alloys in the samples after annealing process. CuSi alloys were mainly obtained for 25:75 at.% samples, meanwhile the AuCuII phase dominates for samples prepared with 50:50 at.%. Additionally, the Au:Cu alloys with 75:25 at.%, produce Au{sub 2}Cu{sub 3} and Au{sub 3}Cu phases. The formed alloys were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS) to study the morphology and the elemental concentration of the formed alloys. - Highlights: • AuCu/Si alloy thin films were prepared by thermal diffusion. • Alloys prepared with 50 at.% of Au produce the AuCuII phase. • Alloys prepared with 75 at.% of Au produce Au{sub 3}Cu and Au{sub 2}Cu{sub 3} phases. • All alloys present diffusion of Si and Cu through the CuSi alloy formation.

  6. Boron diffusion in nanocrystalline 3C-SiC

    SciTech Connect (OSTI)

    Schnabel, Manuel; Weiss, Charlotte; Rachow, Thomas; Löper, Philipp; Janz, Stefan; Canino, Mariaconcetta; Summonte, Caterina; Mirabella, Salvo; Wilshaw, Peter R.

    2014-05-26

    The diffusion of boron in nanocrystalline silicon carbide (nc-SiC) films with a grain size of 4–7 nm is studied using a poly-Si boron source. Diffusion is found to be much faster than in monocrystalline SiC as it takes place within the grain boundary (GB) network. Drive-in temperatures of 900–1000°C are suitable for creating shallow boron profiles up to 100 nm deep, while 1100°C is sufficient to flood the 200 nm thick films with boron. From the resulting plateau at 1100 °C a boron segregation coefficient of 28 between nc-SiC and the Si substrate, as well as a GB boron solubility limit of 0.2 nm{sup −2} is determined. GB diffusion in the bulk of the films is Fickian and thermally activated with D{sub GB}(T)=(3.1−5.6)×10{sup 7}exp(−5.03±0.16  eV/k{sub B}T) cm{sup 2}s{sup −1}. The activation energy is interpreted in terms of a trapping mechanism at dangling bonds. Higher boron concentrations are present at the nc-SiC surface and are attributed to immobilized boron.

  7. Quantum confinement in Si and Ge nanostructures: Theory and experiment

    SciTech Connect (OSTI)

    Barbagiovanni, Eric G.; Lockwood, David J.; Simpson, Peter J.; Goncharova, Lyudmila V.

    2014-03-15

    The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO{sub 2}, and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si{sub 3}N{sub 4} and Al{sub 2}O{sub 3}. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters.

  8. SiAlON ceramic compositions and methods of fabrication

    DOE Patents [OSTI]

    O'Brien, M.H.; Park, B.H.

    1994-05-31

    A method of fabricating a SiAlON ceramic body includes: (a) combining quantities of Si[sub 3]N[sub 4], Al[sub 2]O[sub 3] and CeO[sub 2] to produce a mixture; (b) forming the mixture into a desired body shape; (c) heating the body to a densification temperature of from about 1,550 C to about 1,850 C; (d) maintaining the body at the densification temperature for a period of time effective to densify the body; (e) cooling the densified body to a devitrification temperature of from about 1,200 C to about 1,400 C; and (f) maintaining the densified body at the devitrification temperature for a period of time effective to produce a [beta][prime]-SiAlON crystalline phase in the body having elemental or compound form Ce incorporated in the [beta][prime]-SiAlON crystalline phase. Further, a SiAlON ceramic body comprises: (a) an amorphous phase; and (b) a crystalline phase, the crystalline phase comprising [beta][prime]-SiAlON having lattice substituted elemental or compound form Ce.

  9. SiN{sub x} layers on nanostructured Si solar cells: Effective for optical absorption and carrier collection

    SciTech Connect (OSTI)

    Cho, Yunae; Kim, Eunah; Gwon, Minji; Kim, Dong-Wook E-mail: dwkim@ewha.ac.kr; Park, Hyeong-Ho; Kim, Joondong E-mail: dwkim@ewha.ac.kr

    2015-10-12

    We compared nanopatterned Si solar cells with and without SiN{sub x} layers. The SiN{sub x} layer coating significantly improved the internal quantum efficiency of the nanopatterned cells at long wavelengths as well as short wavelengths, whereas the surface passivation helped carrier collection of flat cells mainly at short wavelengths. The surface nanostructured array enhanced the optical absorption and also concentrated incoming light near the surface in broad wavelength range. Resulting high density of the photo-excited carriers near the surface could lead to significant recombination loss and the SiN{sub x} layer played a crucial role in the improved carrier collection of the nanostructured solar cells.

  10. All-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayers fabricated...

    Office of Scientific and Technical Information (OSTI)

    Ge and Cosub 2FeSi enable to promote the 2D epitaxial growth of Ge up to 5 nm at a ... Country of Publication: United States Language: English Subject: 36 MATERIALS SCIENCE; 71 ...

  11. Properties of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters

    SciTech Connect (OSTI)

    Dong, Yi; Rehman, Habib ur; Springborg, Michael

    2015-01-22

    The structures of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters with up to 44 atoms have been determined theoretically using an unbiased structure-optimization method in combination with a parametrized, density-functional description of the total energy for a given structure. By analyzing the total energy in detail, particularly stable clusters are identified. Moreover, general trends in the structures are identified with the help of specifically constructed descriptors.

  12. Structural and photovoltaic properties of a-Si (SNc)/c-Si heterojunction fabricated by EBPVD technique

    SciTech Connect (OSTI)

    Demiro?lu, D.; Kazmanli, K.; Urgen, M.; Tatar, B.

    2013-12-16

    In last two decades sculptured thin films are very attractive for researches. Some properties of these thin films, like high porosity correspondingly high large surface area, controlled morphology; bring into prominence on them. Sculptured thin films have wide application areas as electronics, optics, mechanics, magnetic and chemistry. Slanted nano-columnar (SnC) thin films are a type of sculptured thin films. In this investigation SnC thin films were growth on n-type crystalline Si(100) and p-type crystalline Si(111) via ultra-high vacuum electron beam evaporation technique. The structural and morphological properties of the amorphous silicon thin films were investigated by XRD, Raman and FE-SEM analysis. According to the XRD and Raman analysis the structure of thin film was amorphous and FE-SEM analysis indicated slanted nano-columns were formed smoothly. Slanted nano-columns a-Si/c-Si heterojunction were prepared as using a photovoltaic device. In this regard we were researched photovoltaic properties of these heterojunction with current-voltage characterization under dark and illumination conditions. Electrical parameters were determined from the current-voltage characteristic in the dark conditions zero-bias barrier height ?{sub B0}?=?0.83?1.00eV; diode ideality factor ??=?11.71?10.73; series resistance R{sub s}?=?260?31.1 k? and shunt resistance R{sub sh}?=?25.71?63.5 M? SnC a-Si/n-Si and SnC a-Si/p-Si heterojunctions shows a pretty good photovoltaic behavior about 10{sup 3}- 10{sup 4} times. The obtained photovoltaic parameters are such as short circuit current density J{sub sc} 83-40 mA/m{sup 2}, open circuit voltage V{sub oc} 900-831 mV.

  13. Tunneling magnetoresistance in Fe{sub 3}Si/MgO/Fe{sub 3}Si(001) magnetic tunnel junctions

    SciTech Connect (OSTI)

    Tao, L. L.; Liang, S. H.; Liu, D. P.; Wei, H. X.; Han, X. F.; Wang, Jian

    2014-04-28

    We present a theoretical study of the tunneling magnetoresistance (TMR) and spin-polarized transport in Fe{sub 3}Si/MgO/Fe{sub 3}Si(001) magnetic tunnel junction (MTJ). It is found that the spin-polarized conductance and bias-dependent TMR ratios are rather sensitive to the structure of Fe{sub 3}Si electrode. From the symmetry analysis of the band structures, we found that there is no spin-polarized Δ{sub 1} symmetry bands crossing the Fermi level for the cubic Fe{sub 3}Si. In contrast, the tetragonal Fe{sub 3}Si driven by in-plane strain reveals half-metal nature in terms of Δ{sub 1} state. The giant TMR ratios are predicted for both MTJs with cubic and tetragonal Fe{sub 3}Si electrodes under zero bias. However, the giant TMR ratio resulting from interface resonant transmission for the former decreases rapidly with the bias. For the latter, the giant TMR ratio can maintain up to larger bias due to coherent transmission through the majority-spin Δ{sub 1} channel.

  14. Hydrogen intercalation of single and multiple layer graphene synthesized on Si-terminated SiC(0001) surface

    SciTech Connect (OSTI)

    So?tys, Jakub; Piechota, Jacek; Ptasinska, Maria; Krukowski, Stanis?aw

    2014-08-28

    Ab initio density functional theory simulations were used to investigate the influence of hydrogen intercalation on the electronic properties of single and multiple graphene layers deposited on the SiC(0001) surface (Si-face). It is shown that single carbon layer, known as a buffer layer, covalently bound to the SiC substrate, is liberated after hydrogen intercalation, showing characteristic Dirac cones in the band structure. This is in agreement with the results of angle resolved photoelectron spectroscopy measurements of hydrogen intercalation of SiC-graphene samples. In contrast to that hydrogen intercalation has limited impact on the multiple sheet graphene, deposited on Si-terminated SiC surface. The covalently bound buffer layer is liberated attaining its graphene like structure and dispersion relation typical for multilayer graphene. Nevertheless, before and after intercalation, the four layer graphene preserved the following dispersion relations in the vicinity of K point: linear for (AAAA) stacking, direct parabolic for Bernal (ABAB) stacking and wizard hat parabolic for rhombohedral (ABCA) stacking.

  15. Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO{sub 2} matrix

    SciTech Connect (OSTI)

    Saxena, Nupur Kumar, Pragati; Gupta, Vinay

    2015-05-15

    Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2} matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO{sub 2} is an important issue to fabricate high efficiency devices based on Si-NCs. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 C. This suggests that by controlling the annealing temperature, the dispersion of Si-NCs can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters.

  16. Composites of Upgraded Metallurgical Grade (UMG) Si with Photovoltaic (PV) Grade Si

    SciTech Connect (OSTI)

    Hovel, Harold; Prettyman, Kevin; Krause, Rainer; Dipankar, Roy

    2015-03-27

    At the beginning of this project 125 wafers of UMG material blended with non-UMG were obtained in the various blends; 50/50,70/30,80/20. 90/10 and 100% UMG. Solar grade , non-UMG material was used for comparison. Many techniques for starting substrate evaluation were used including lifetime, resitivity, SEM, IPCMS. Some degree of gettering was implemented by lengthening the time of phosphorous diffusion. The UMG/solar blends resulted in 14.5% -15% efficiencies, and even 100% UMG showed 14.5% values, not less than standard cells manufactured at the time and an encouraging result for the prospects of using UMG material due to the lower $/watt. A later decline in the cost of Si and an emphasis on reaching higher efficiencies in general led to a vanishing interest in the use of UMG.

  17. Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Annual Report

    SciTech Connect (OSTI)

    Henager, Charles H.; Alvine, Kyle J.; Roosendaal, Timothy J.; Shin, Yongsoon; Nguyen, Ba Nghiep; Borlaug, Brennan A.; Jiang, Weilin; Arreguin, Shelly A.

    2015-01-15

    A new dual-phase nanocomposite of Ti₃SiC₂/SiC is being synthesized using preceramic polymers, ceramic powders, and carbon nanotubes (CNTs) designed to be suitable for advanced nuclear reactors and perhaps as fuel cladding. The material is being designed to have superior fracture toughness compared to SiC, adequate thermal conductivity, and higher density than SiC/SiC composites. This annual report summarizes the progress towards this goal and reports progress in understanding certain aspects of the material behavior but some shortcomings in achieving full density or in achieving adequate incorporation of CNTs. The measured thermal conductivity is adequate and falls into an expected range based on SiC and Ti₃SiC₂. Part of this study makes an initial assessment for Ti₃SiC₂ as a barrier to fission product transport. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti₃SiC₂, SiC, and a synthesized at PNNL. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti₃SiC₂ occurs during ion implantation at 873 K. Cs in Ti₃SiC₂ is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti₃SiC₂ as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Progress is reported in thermal conductivity modeling of SiC-based materials that is relevant to this research, as is progress in modeling the effects of CNTs on fracture strength of SiC-based materials.

  18. Absence of quantum confinement effects in the photoluminescence of Si{sub 3}N{sub 4}–embedded Si nanocrystals

    SciTech Connect (OSTI)

    Hiller, D. Zelenina, A.; Gutsch, S.; Zacharias, M.; Dyakov, S. A.; López-Conesa, L.; López-Vidrier, J.; Peiró, F.; Garrido, B.; Estradé, S.; Schnabel, M.; Weiss, C.; Janz, S.

    2014-05-28

    Superlattices of Si-rich silicon nitride and Si{sub 3}N{sub 4} are prepared by plasma-enhanced chemical vapor deposition and, subsequently, annealed at 1150 °C to form size-controlled Si nanocrystals (Si NCs) embedded in amorphous Si{sub 3}N{sub 4}. Despite well defined structural properties, photoluminescence spectroscopy (PL) reveals inconsistencies with the typically applied model of quantum confined excitons in nitride-embedded Si NCs. Time-resolved PL measurements demonstrate 10{sup 5} times faster time-constants than typical for the indirect band structure of Si NCs. Furthermore, a pure Si{sub 3}N{sub 4} reference sample exhibits a similar PL peak as the Si NC samples. The origin of this luminescence is discussed in detail on the basis of radiative defects and Si{sub 3}N{sub 4} band tail states in combination with optical absorption measurements. The apparent absence of PL from the Si NCs is explained conclusively using electron spin resonance data from the Si/Si{sub 3}N{sub 4} interface defect literature. In addition, the role of Si{sub 3}N{sub 4} valence band tail states as potential hole traps is discussed. Most strikingly, the PL peak blueshift with decreasing NC size, which is often observed in literature and typically attributed to quantum confinement (QC), is identified as optical artifact by transfer matrix method simulations of the PL spectra. Finally, criteria for a critical examination of a potential QC-related origin of the PL from Si{sub 3}N{sub 4}-embedded Si NCs are suggested.

  19. Phanerozoic tectono-stratigraphic evolution of the Trans-Pecos and Permian basin regions (Mexico, Texas, New Mexico) using Landsat imagery, subsurface and outcrop data

    SciTech Connect (OSTI)

    Markello, J.R.; Sarg, J.F.

    1996-08-01

    Integrating regional Landsat imagery, outcrop field studies, and subsurface data has resulted in a more comprehensive understanding and delineation of the tectono-stratigraphic evolution of the Trans-Pecos region. Landsat imagery were acquired and registered to the existing 1:25000 scale maps and mosaiced to create a regional view of the Trans-Pecos and Permian basin region. The imagery were used to extrapolate and map key stratigraphic and tectonic elements after calibration from documented outcrop and subsurface data. The interpretations aided in the extrapolation of scattered control information and were critical in the complete reconstruction of the geologic history of the area. The Trans-Pecos Phanerozoic history comprises five tectono-depositional phases, and these have controlled the shape of the modem landscape: (1) Late Proterozoic rifting (Gondwana from Laurentia), and development of the Early-Middle Paleozoic Tobosa basin; (2) Pennsylvanian collision (South and North Americas), and differentiation of the Tobosa basin into the Midland, Delaware, Orogrande, and Pedregosa basins separated by basement blocks: Central Basin Platform, Diablo Platform, Burro-Florida Platform; (3) Middle Mesozoic transtensional rifting (Mexico from North America), and Late Jurassic failed rifting of the Mexican Chihuahua and Coahuila Troughs west and south of the Diablo Platform; (4) Late Mesozoic Laramide collision (Mexico and Texas), and development of the Chihuahua fold/thrust belt limited by the western margin of the Diablo Platform; (5) Late Cenozoic North American basin and Range rifting, and development of Rio Grande grabens, block-faulted mountains, and volcanics. The Tobosa basin was a passive-margin interior sag; its continental margin was south of the Marathons.

  20. Quantum wells on 3C-SiC/NH-SiC heterojunctions. Calculation of spontaneous polarization and electric field strength in experiments

    SciTech Connect (OSTI)

    Sbruev, I. S.; Sbruev, S. B.

    2010-10-15

    The results of experiments with quantum wells on 3C-SiC/4H-SiC and 3C-SiC/6H-SiC heterojunctions obtained by various methods are reconsidered. Spontaneous polarizations, field strengths, and energies of local levels in quantum wells on 3C-SiC/NH-SiC heterojunctions were calculated within a unified model. The values obtained are in agreement with the results of all considered experiments. Heterojunction types are determined. Approximations for valence band offsets on heterojunctions between silicon carbide polytypes and the expression for calculating local levels in quantum wells on the 3C-SiC/NH-SiC heterojunction are presented. The spontaneous polarizations and field strengths induced by spontaneous polarization on 3C-SiC/4H-SiC and 3C-SiC/6H-SiC heterojunctions were calculated as 0.71 and 0.47 C/m{sup 2} and 0.825 and 0.55 MV/cm, respectively.

  1. Joining of beta-SiC by spark plasma sintering

    SciTech Connect (OSTI)

    Grasso, Salvatore; Tatarko, Peter; Rizzo, S.; Porwal, Harshit; Hu, Chunfeng; Katoh, Yutai; Salvo, M; Reece, Michael John; Ferraris, Monica

    2014-01-01

    Spark plasma sintering (SPS) was employed to join monolithic -SiC with or without titanium as intermediate joining material. Both the localizedand rapid heating contributed to the inherent energy saving of electric current assisted joining technique. The effects of uniaxial pressure and surfacepreparation were analyzed independently with respect to the flexural strength and the morphology of the joints. In particular samples polisheddown to 1 m and joined at 1900 C for 5 min achieved the strength of the as received material. The failure occurred outside the joining interface,confirming the optimum quality of the joint. Pressure in combination with surface preparation was necessary to achieve perfect adhesion and porefree direct joining of SiC. The use of Ti foil as a joining material and pressure allowed joining of unpolished SiC.

  2. Electronic and magnetic properties of Si substituted Fe3Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shanavas, Kavungal Veedu; McGuire, Michael A.; Parker, David S.

    2015-09-23

    Using first principles calculations we studied the effect of Si substitution in the hexagonal Fe3Ge. We find the low temperature magnetic anisotropy in this system to be planar and originating mostly from the spin-orbit coupling in Fe-d states. Reduction of the unitcell volume reduces the in-plane magnetic anisotropy, eventually turning it positive which reorients the magnetic moments to the axial direction. We find that substituting Ge with the smaller Si ions also reduces the anisotropy, potentially enhancing the region of stability of the axial magnetization, which is beneficial for magnetic applications. Thus our experimental measurements on samples of Fe3Ge1–xSix confirmmore » these predictions and show that substitution of about 6% of the Ge with Si increases by approximately 35 K the temperature range over which anisotropy is uniaxial.« less

  3. Transparent conductor-embedding nanolens for Si solar cells

    SciTech Connect (OSTI)

    Kim, Joondong E-mail: junsin@skku.edu Kumar, Melvin David; Yun, Ju-Hyung; Kim, Hongsik; Park, Hyeong-Ho; Lee, Eunsongyi; Kim, Dong-wook; Kim, Hyunyub; Kim, Mingeon; Yi, Junsin E-mail: junsin@skku.edu; Jeong, Chaehwan E-mail: junsin@skku.edu

    2015-04-13

    We present a large-scale applicable nanolens-embedding solar cell. An electrically conductive and optically transparent indium-tin-oxide (ITO) thin film was coated on a Si substrate. After then, periodically patterned ITO nanodome-arrays were formed on the ITO film by using a nano-imprint method. This structure is effective to reduce the incident light reflection for broad wavelengths and also efficient to drive the incident photons into a light-absorbing Si substrate. There exist two electric fields. One is by a p/n junction and the other is by the light absorption into Si. We designed nanolens structures to overlap two electric fields and demonstrate highly improved solar cell performances of current and voltage values from a planar structure.

  4. Thermophysical properties of U3Si2 to 1773K

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    White, Joshua Taylor; Nelson, Andrew Thomas; Dunwoody, John Tyler; Byler, David Darrin; Safarik, Douglas Joseph; McClellan, Kenneth James

    2015-05-08

    Use of U3Si2 in nuclear reactors requires accurate thermophysical property data to capture heat transfer within the core. Compilation of the limited previous research efforts focused on the most critical property, thermal conductivity, reveals extensive disagreement. Assessment of this data is challenged by the fact that the critical structural and chemical details of the material used to provide historic data is either absent or confirms the presence of significant impurity phases. This study was initiated to fabricate high purity U3Si2 to quantify the coefficient of thermal expansion, heat capacity, thermal diffusivity, and thermal conductivity from room temperature to 1773 K.more » Here, the datasets provided in this manuscript will facilitate more detailed fuel performance modeling to assess both current and proposed reactor designs that incorporate U3Si2.« less

  5. Temperature dependent transport characteristics of graphene/n-Si diodes

    SciTech Connect (OSTI)

    Parui, S.; Ruiter, R.; Zomer, P. J.; Wojtaszek, M.; Wees, B. J. van; Banerjee, T.

    2014-12-28

    Realizing an optimal Schottky interface of graphene on Si is challenging, as the electrical transport strongly depends on the graphene quality and the fabrication processes. Such interfaces are of increasing research interest for integration in diverse electronic devices as they are thermally and chemically stable in all environments, unlike standard metal/semiconductor interfaces. We fabricate such interfaces with n-type Si at ambient conditions and find their electrical characteristics to be highly rectifying, with minimal reverse leakage current (<10{sup ?10}?A) and rectification of more than 10{sup 6}. We extract Schottky barrier height of 0.69?eV for the exfoliated graphene and 0.83?eV for the CVD graphene devices at room temperature. The temperature dependent electrical characteristics suggest the influence of inhomogeneities at the graphene/n-Si interface. A quantitative analysis of the inhomogeneity in Schottky barrier heights is presented using the potential fluctuation model proposed by Werner and Gttler.

  6. Joining SI3N4 for Advanced Turbomachinery Applications

    SciTech Connect (OSTI)

    GLASS, S. JILL; LOEHMAN, RONALD E.; HOSKING, F. MICHAEL; STEPHENS JR., JOHN J.; VIANCO, PAUL T.; NEILSEN, MICHAEL K.; WALKER, CHARLES A.; POLLINGER, J.P.; MAHONEY, F.M.; QUILLEN, B.G.

    2000-07-01

    The main objective of this project was to develop reliable, low-cost techniques for joining silicon nitride (Si{sub 3}N{sub 4}) to itself and to metals. For Si{sub 3}N{sub 4} to be widely used in advanced turbomachinery applications, joining techniques must be developed that are reliable, cost-effective, and manufacturable. This project addressed those needs by developing and testing two Si{sub 3}N{sub 4} joining systems; oxynitride glass joining materials and high temperature braze alloys. Extensive measurements were also made of the mechanical properties and oxidation resistance of the braze materials. Finite element models were used to predict the magnitudes and positions of the stresses in the ceramic regions of ceramic-to-metal joints sleeve and butt joints, similar to the geometries used for stator assemblies.

  7. N-V{sub Si}-related center in non-irradiated 6H SiC nanostructure

    SciTech Connect (OSTI)

    Bagraev, Nikolay; Danilovskii, Eduard; Gets, Dmitrii; Klyachkin, Leonid; Malyarenko, Anna; Kalabukhova, Ekaterina; Shanina, Bella; Savchenko, Dariya

    2014-02-21

    We present the first findings of the vacancy-related centers identified by the electron spin resonance (ESR) and electrically-detected (ED) ESR method in the non-irradiated 6H-SiC nanostructure. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the ?-barriers heavily doped with boron on the surface of the n-type 6H-SiC (0001) wafer. The EDESR method by measuring the only magnetoresistance of the 6H SiC nanostructure under the high frequency generation from the ?-barriers appears to allow the identification of the silicon vacancy centers as well as the triplet center with spin state S=1. The same triplet center that is characterized by the larger value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. The hyperfine (hf) lines in the ESR and EDESR spectra originating from the hf interaction with the {sup 14}N nucleus allow us to attribute this triplet center to the N-V{sub Si} defect.

  8. Synthesis of SiO{sub 2}/?-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition

    SciTech Connect (OSTI)

    Zhang, Zhikun; Bi, Kaifeng; Liu, Yanhong; Qin, Fuwen; Liu, Hongzhu; Bian, Jiming; Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050 ; Zhang, Dong; Miao, Lihua; Department of Computer and Mathematical Basic Teaching, Shenyang Medical College, Shenyan 110034

    2013-11-18

    ?-SiC thin films were synthesized directly on graphite by hot filament chemical vapor deposition at low temperature. SiH{sub 4} diluted in hydrogen was employed as the silicon source, while graphite was functioned as both substrate and carbon source for the as-grown ?-SiC films. X-ray diffraction and Fourier transform infrared analysis indicate that SiO{sub 2}/?-SiC/graphite hybrid composite was formed after post annealing treatment, and its crystalline quality can be remarkably improved under optimized annealing conditions. The possible growth mechanism was proposed based on in situ etching of graphite by reactive hydrogen radicals at the atomic level.

  9. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect (OSTI)

    Steglich, Martin; Schrempel, Frank; Fchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Hche, Thomas; Tnnermann, Andreas; Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380C. Typical Stransky-Krastanov growth is observed at 410C. At lower temperatures (320C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  10. Recovery of Mo/Si multilayer coated optical substrates

    DOE Patents [OSTI]

    Baker, S.L.; Vernon, S.P.; Stearns, D.G.

    1997-12-16

    Mo/Si multilayers are removed from superpolished ZERODUR and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. The two step dry etching process removes SiO{sub 2} overlayer with a fluroine-containing gas and then moves molybdenum and silicon multilayers with a chlorine-containing gas. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates. 5 figs.

  11. Recovery of Mo/Si multilayer coated optical substrates

    DOE Patents [OSTI]

    Baker, Sherry L.; Vernon, Stephen P.; Stearns, Daniel G.

    1997-12-16

    Mo/Si multilayers are removed from superpolished ZERODUR and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. The two step dry etching process removes SiO.sub.2 overlayer with a fluroine-containing gas and then moves molybdenum and silicon multilayers with a chlorine-containing gas. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates.

  12. Photoluminescence from Si nanocrystals exposed to a hydrogen plasma

    SciTech Connect (OSTI)

    Jung, Yoon-Jin; Yoon, Jong-Hwan; Elliman, R. G.; Wilkinson, A. R.

    2008-10-15

    Si nanocrystals embedded in SiO{sub 2} films were exposed to an atomic H plasma at different temperatures. Photoluminescence intensity from the nanocrystals increases with increasing exposure time, followed by saturation that depends on the exposure temperature. The saturation level depends on the final exposure temperature and shows no dependence on the thermal history of exposure. This behavior is shown to be consistent with a model in which the steady-state passivation level is determined by a balance between defect passivation and depassivation by H, with the activation energy for the passivation reaction being larger than that for the depassivation reaction.

  13. 15.08.07 RH Si Microwire Photoanode - JCAP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A High-Performance Si Microwire Photocathode Coupled with Ni-Mo Catalyst Shaner, M. R., McKone, J. R., Gray, H. B. & Lewis, N. S. Functional integration of Ni-Mo electrocatalysts with i microwire array photocathodes to simultaneously achieve high fill factors and light-limited photocurrent densities for solar-driven hydrogen evolution. Energy & Environmental Science, DOI: 10.1039/C5EE01076D (2015). Scientific Achievement We have designed and demonstrated a H2-evolving Si microwire

  14. Structure of a putative trans-editing enzyme for prolyl-tRNA synthetase from Aeropyrum pernix K1 at 1.7 Å resolution

    SciTech Connect (OSTI)

    Murayama, Kazutaka; Kato-Murayama, Miyuki; Katsura, Kazushige; Uchikubo-Kamo, Tomomi; Yamaguchi-Hirafuji, Machiko; Kawazoe, Masahito; Akasaka, Ryogo; Hanawa-Suetsugu, Kyoko; Hori-Takemoto, Chie; Terada, Takaho; Shirouzu, Mikako; Yokoyama, Shigeyuki

    2005-01-01

    The three-dimensional structure of the APE2540 protein from A. pernix K1 has been determined by the multiple anomalous dispersion method at 1.7 Å resolution. The structure includes two monomers in the asymmetric unit and shares structural similarity with the YbaK protein or cysteinyl-tRNA{sup Pro} deacylase from H. influenzae. The crystal structure of APE2540, the putative trans-editing enzyme ProX from Aeropyrum pernix K1, was determined in a high-throughput manner. The crystal belongs to the monoclinic space group P2{sub 1}, with unit-cell parameters a = 47.4, b = 58.9, c = 53.6 Å, β = 106.8°. The structure was solved by the multiwavelength anomalous dispersion method at 1.7 Å and refined to an R factor of 16.8% (R{sub free} = 20.5%). The crystal structure includes two protein molecules in the asymmetric unit. Each monomer consists of eight β-strands and seven α-helices. A structure-homology search revealed similarity between the trans-editing enzyme YbaK (or cysteinyl-tRNA{sup Pro} deacylase) from Haemophilus influenzae (HI1434; 22% sequence identity) and putative ProX proteins from Caulobacter crescentus (16%) and Agrobacterium tumefaciens (21%)

  15. Interfacing the Ab initio multiple spawning method with electronic structure methods in GAMESS: Photodecay of trans-Azomethane

    SciTech Connect (OSTI)

    Gaenko, Alexander; DeFusco, Albert; Varganov, Sergey A.; Martnez, Todd J.; Gordon, Mark S.

    2014-10-20

    This work presents a nonadiabatic molecular dynamics study of the nonradiative decay of photoexcited trans-azomethane, using the ab initio multiple spawning (AIMS) program that has been interfaced with the General Atomic and Molecular Electronic Structure System (GAMESS) quantum chemistry package for on-the-fly electronic structure evaluation. The interface strategy is discussed, and the capabilities of the combined programs are demonstrated with a nonadiabatic molecular dynamics study of the nonradiative decay of photoexcited trans-azomethane. Energies, gradients, and nonadiabatic coupling matrix elements were obtained with the state-averaged complete active space self-consistent field method, as implemented in GAMESS. The influence of initial vibrational excitation on the outcome of the photoinduced isomerization is explored. Increased vibrational excitation in the CNNC torsional mode shortens the excited state lifetime. Depending on the degree of vibrational excitation, the excited state lifetime varies from ~60200 fs. As a result, these short lifetimes are in agreement with time-resolved photoionization mass spectroscopy experiments.

  16. Robust diamond-like Fe-Si network in the zero-strain NaxFeSiO4 cathode

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ye, Zhuo; Zhao, Xin; Li, Shouding; Wu, Shunqing; Wu, Ping; Nguyen, Manh Cuong; Guo, Jianghuai; Mi, Jinxiao; Gong, Zhengliang; Zhu, Zi -Zhong; et al

    2016-07-14

    Sodium orthosilicates Na2MSiO4 (M denotes transition metals) have attracted much attention due to the possibility of exchanging two electrons per formula unit. In this work, we report a group of sodium iron orthosilicates Na2FeSiO4. Their crystal structures are characterized by a diamond-like Fe-Si network. The Fe-Si network is quite robust against the charge/discharge process, which explains the high structural stability observed in experiment. Furthermore, using the density functional theory within the GGA + U framework and X-ray diffraction studies, the crystal structures and structural stabilities during the sodium extraction/re-insertion process are systematically investigated.

  17. Lithium diffusion at Si-C interfaces in silicon-graphene composites

    SciTech Connect (OSTI)

    Odbadrakh, Khorgolkhuu [Joint Institute for Computational Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States); McNutt, N. W. [Department of Chemical and Biomolecular Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States); Nicholson, D. M. [Computational Science and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States); Department of Physics, University of North Carolina, Asheville, North Carolina 28804 (United States); Rios, O. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States); Keffer, D. J. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States)

    2014-08-04

    Models of intercalated Li and its diffusion in Si-Graphene interfaces are investigated using density functional theory. Results suggest that the presence of interfaces alters the energetics of Li binding and diffusion significantly compared to bare Si or Graphene surfaces. Our results show that cavities along reconstructed Si surface provide diffusion paths for Li. Diffusion barriers calculated along these cavities are significantly lower than penetration barriers to bulk Si. Interaction with Si surface results in graphene defects, creating Li diffusion paths that are confined along the cavities but have still lower barrier than in bulk Si.

  18. Light harvesting with Ge quantum dots embedded in SiO{sub 2} or Si{sub 3}N{sub 4}

    SciTech Connect (OSTI)

    Cosentino, Salvatore Raciti, Rosario; Simone, Francesca; Crupi, Isodiana; Terrasi, Antonio; Mirabella, Salvo; Sungur Ozen, Emel; Aydinli, Atilla; Mio, Antonio M.; Nicotra, Giuseppe; Turan, Rasit

    2014-01-28

    Germanium quantum dots (QDs) embedded in SiO{sub 2} or in Si{sub 3}N{sub 4} have been studied for light harvesting purposes. SiGeO or SiGeN thin films, produced by plasma enhanced chemical vapor deposition, have been annealed up to 850?C to induce Ge QD precipitation in Si based matrices. By varying the Ge content, the QD diameter can be tuned in the 39?nm range in the SiO{sub 2} matrix, or in the 12?nm range in the Si{sub 3}N{sub 4} matrix, as measured by transmission electron microscopy. Thus, Si{sub 3}N{sub 4} matrix hosts Ge QDs at higher density and more closely spaced than SiO{sub 2} matrix. Raman spectroscopy revealed a higher threshold for amorphous-to-crystalline transition for Ge QDs embedded in Si{sub 3}N{sub 4} matrix in comparison with those in the SiO{sub 2} host. Light absorption by Ge QDs is shown to be more effective in Si{sub 3}N{sub 4} matrix, due to the optical bandgap (0.91.6?eV) being lower than in SiO{sub 2} matrix (1.22.2?eV). Significant photoresponse with a large measured internal quantum efficiency has been observed for Ge QDs in Si{sub 3}N{sub 4} matrix when they are used as a sensitive layer in a photodetector device. These data will be presented and discussed, opening new routes for application of Ge QDs in light harvesting devices.

  19. Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts

    SciTech Connect (OSTI)

    Kamioka, J.; Oda, S.; Kodera, T.; Takeda, K.; Obata, T.; Tarucha, S.

    2014-05-28

    The frequency dependence of conductance noise through a gate-defined quantum point contact fabricated on a Si/SiGe modulation doped wafer is characterized. The 1/f{sup 2} noise, which is characteristic of random telegraph noise, is reduced by application of a negative bias on the global top gate to reduce the local gate voltage. Direct leakage from the large global gate voltage also causes random telegraph noise, and therefore, there is a suitable point to operate quantum dot measurement.

  20. Combined wet and dry cleaning of SiGe(001)

    SciTech Connect (OSTI)

    Park, Sang Wook; Kaufman-Osborn, Tobin; Kim, Hyonwoong; Siddiqui, Shariq; Sahu, Bhagawan; Yoshida, Naomi; Brandt, Adam; Kummel, Andrew C.

    2015-07-15

    Combined wet and dry cleaning via hydrofluoric acid (HF) and atomic hydrogen on Si{sub 0.6}Ge{sub 0.4}(001) surface was studied at the atomic level using ultrahigh vacuum scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and x-ray photoelectron spectroscopy to understand the chemical transformations of the surface. Aqueous HF removes native oxide, but residual carbon and oxygen are still observed on Si{sub 0.6}Ge{sub 0.4}(001) due to hydrocarbon contamination from post HF exposure to ambient. The oxygen contamination can be eliminated by shielding the sample from ambient via covering the sample in the HF cleaning solution until the sample is introduced to the vacuum chamber or by transferring the sample in an inert environment; however, both processes still leave carbon contaminant. Dry in-situ atomic hydrogen cleaning above 330 °C removes the carbon contamination on the surface consistent with a thermally activated atomic hydrogen reaction with surface hydrocarbon. A postdeposition anneal at 550 °C induces formation of an atomically flat and ordered SiGe surface observed by STM. STS verifies that the wet and dry cleaned surface has an unpinned Fermi level with no states between the conduction and valence band edge comparable to sputter cleaned SiGe surfaces.

  1. Towards SiC Surface Functionalization: An Ab Initio Study

    SciTech Connect (OSTI)

    Cicero, G; Catellani, A

    2005-01-28

    We present a microscopic model of the interaction and adsorption mechanism of simple organic molecules on SiC surfaces as obtained from ab initio molecular dynamics simulations. Our results open the way to functionalization of silicon carbide, a leading candidate material for bio-compatible devices.

  2. Local structure order in Pd??Cu?Si?? liquid

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yue, G. Q.; Iowa State Univ., Ames, IA; Zhang, Y.; Sun, Y.; Shen, B.; Dong, F.; Wang, Z. Y.; Zhang, R. J.; Zheng, Y. X.; Kramer, M. J.; et al

    2015-02-05

    The short-range order (SRO) in Pd??Cu?Si?? liquid was studied by high energy x-ray diffraction and ab initio molecular dynamics (MD) simulations. The calculated pair correlation functions at different temperatures agree well with the experimental results. The partial pair correlation functions from ab intio MD simulations indicate that Si atoms prefer to be uniformly distributed while Cu atoms tend to aggregate. By performing structure analysis using Honeycutt-Andersen index, Voronoi tessellation, and atomic cluster alignment method, we show that the icosahedron and face-centered cubic SRO increase upon cooling. The dominant SRO is the Pd-centered Pd?Si? motif, namely the structure of which motifmoreis similar to the structure of Pd-centered clusters in the Pd?Si? crystal. The study further confirms the existence of trigonal prism capped with three half-octahedra that is reported as a structural unit in Pd-based amorphous alloys. The majority of Cu-centered clusters are icosahedra, suggesting that the presence of Cu is benefit to promote the glass forming ability.less

  3. Electrical properties of ternary Si-C-N ceramics

    SciTech Connect (OSTI)

    Haluschka, C.; Engel, C.; Riedel, R.

    1996-12-31

    Ternary Si-C-N ceramics were derived from silicon containing polymers by thermally induced hybrid processing. These silicon carbonitrides were investigated by impedance spectroscopy depending on the synthesis conditions. The electrical behavior correlates with the solid state reactions and phase transformations, which take place during the processing. It has also been shown that the electrical properties can be controlled in a wide range.

  4. Elastic scattering of /sup 16/O by /sup 28/Si

    SciTech Connect (OSTI)

    Shkolnik, V.; Dehnhard, D.; Franey, M.A.

    1983-08-01

    Differential cross sections were measured in small angular steps at forward angles for the elastic scattering of /sup 16/O from /sup 28/Si, /sup 29/Si, and /sup 30/Si at E/sub lab/ = 60 MeV and from /sup 28/Si at six other incident energies between 45 and 63 MeV. The angular position of a peak in the diffraction pattern at theta/sub c.m./approx. =75/sup 0/ was measured as a function of the incident energy between 55 and 63 MeV in 0.5 MeV steps. Close fits to these angular distributions and those of other authors at energies between 41 and 81 MeV, some spanning the whole angular range up to 180/sup 0/, and the excitation functions at 90/sup 0/ and 180/sup 0/, were obtained in an optical model analysis. A consistent description of the data was found by the use of a surface-transparent and parity-dependent potential with a real part able to generate a pocket in the total potential. The real and imaginary strengths depend quite strongly and smoothly on the incident energy. This potential shows a transition from surface transparency to strong absorption as E/sub lab/ approaches 81 MeV. The ambiguities in the strengths of the potential are discussed. The broad dispersive potential resonances which are present in several partial waves at every energy are also discussed and their relative importance is examined.

  5. Synthesis and Characterization of Structured Si-Carbon Nanocomposite Anodes

    Broader source: Energy.gov (indexed) [DOE]

    and Functional Polymer Binders | Department of Energy 7_wang_2012_p.pdf (2.21 MB) More Documents & Publications Novel Lithium Ion Anode Structures: Overview of New DOE BATT Anode Projects Synthesis and Characterization of Structured Si-Carbon Nanocomposite Anodes and Functional Polymer Binders Development of High Capacity Anode for Li-ion Batteries

  6. Long-term stable water vapor permeation barrier properties of SiN/SiCN/SiN nanolaminated multilayers grown by plasma-enhanced chemical vapor deposition at extremely low pressures

    SciTech Connect (OSTI)

    Choi, Bum Ho Lee, Jong Ho

    2014-08-04

    We investigated the water vapor permeation barrier properties of 30-nm-thick SiN/SiCN/SiN nanolaminated multilayer structures grown by plasma enhanced chemical vapor deposition at 7 mTorr. The derived water vapor transmission rate was 1.12 × 10{sup −6} g/(m{sup 2} day) at 85 °C and 85% relative humidity, and this value was maintained up to 15 000 h of aging time. The X-ray diffraction patterns revealed that the nanolaminated film was composed of an amorphous phase. A mixed phase was observed upon performing high resolution transmission electron microscope analysis, which indicated that a thermodynamically stable structure was formed. It was revealed amorphous SiN/SiCN/SiN multilayer structures that are free from intermixed interface defects effectively block water vapor permeation into active layer.

  7. Resorption Rate Tunable Bioceramic: Si, Zn-Modified Tricalcium Phosphate

    SciTech Connect (OSTI)

    Xiang Wei

    2006-08-09

    This dissertation is organized in an alternate format. Several manuscripts which have already been published or are to be submitted for publication have been included as separate chapters. Chapter 1 is a general introduction which describes the dissertation organization and introduces the human bone and ceramic materials as bone substitute. Chapter 2 is the background and literature review on dissolution behavior of calcium phosphate, and discussion of motivation for this research. Chapter 3 is a manuscript entitled ''Si,Zn-modified tricalcium phosphate: a phase composition and crystal structure study'', which was published in ''Key Engineering Materials'' [1]. Chapter 4 gives more crystal structure details by neutron powder diffraction, which identifies the position for Si and Zn substitution and explains the stabilization mechanism of the structure. A manuscript entitled ''Crystal structure analysis of Si, Zn-modified Tricalcium phosphate by Neutron Powder Diffraction'' will be submitted to Biomaterials [2]. Chapter 5 is a manuscript, entitled ''Dissolution behavior and cytotoxicity test of Si, Zn-modified tricalcium phosphate'', which is to be submitted to Biomaterials [3]. This paper discusses the additives effect on the dissolution behavior of TCP, and cytotoxicity test result is also included. Chapter 6 is the study of hydrolysis process of {alpha}-tricalcium phosphate in the simulated body fluid, and the phase development during drying process is discussed. A manuscript entitled ''Hydrolysis of {alpha}-tricalcium phosphate in simulated body fluid and phase transformation during drying process'' is to be submitted to Biomaterials [4]. Ozan Ugurlu is included as co-authors in these two papers due to his TEM contributions. Appendix A is the general introduction of the materials synthesis, crystal structure and preliminary dissolution result. A manuscript entitled ''Resorption rate tunable bioceramic: Si and Zn-modified tricalcium phosphate'' was published in

  8. Research on the Hydrogen Passivation of Defects and Impurities in Si Relevant to Crystalline Si Solar Cell Materials: Final Report, 16 February 2000 -- 15 April 2003

    SciTech Connect (OSTI)

    Stavola, M.

    2003-09-01

    The goal of this experimental research program is to increase the understanding, at a microscopic level, of hydrogenation processes and passivation mechanisms for crystalline-Si photovoltaics. In our experiments, vibrational spectroscopy was used to study the properties of the interstitial H2 molecule in Si and the transition-metal-hydrogen complexes in Si. The interstitial H2 molecule is formed readily in Si when hydrogen is introduced. Our studies establish that interstitial H2 in Si behaves as a nearly free rotator, solving puzzles about the behavior of this defect that have persisted since the discovery of its vibrational spectrum. The transition metals are common impurities in Si that decrease the minority-carrier lifetime and degrade the efficiencies of solar cells. Therefore, the possibility that transition-metal impurities in Si might be passivated by hydrogen has long been of interest. Our studies of transition-metal-H complexes in Si help to establish the structural and electrical properties of a family of Pt-H complexes in Si, and have made the Pt-H complexes a model system for understanding the interaction of hydrogen with transition-metal impurities in Si.

  9. Comparative life-cycle energy payback analysis of multi-junction a-SiGe and nanocrystalline/a-Si modules

    SciTech Connect (OSTI)

    Fthenakis, V.; Kim, H.

    2010-07-15

    Despite the publicity of nanotechnologies in high tech industries including the photovoltaic sector, their life-cycle energy use and related environmental impacts are understood only to a limited degree as their production is mostly immature. We investigated the life-cycle energy implications of amorphous silicon (a-Si) PV designs using a nanocrystalline silicon (nc-Si) bottom layer in the context of a comparative, prospective life-cycle analysis framework. Three R and D options using nc-Si bottom layer were evaluated and compared to the current triple-junction a-Si design, i.e., a-Si/a-SiGe/a-SiGe. The life-cycle energy demand to deposit nc-Si was estimated from parametric analyses of film thickness, deposition rate, precursor gas usage, and power for generating gas plasma. We found that extended deposition time and increased gas usages associated to the relatively high thickness of nc-Si lead to a larger primary energy demand for the nc-Si bottom layer designs, than the current triple-junction a-Si. Assuming an 8% conversion efficiency, the energy payback time of those R and D designs will be 0.7-0.9 years, close to that of currently commercial triple-junction a-Si design, 0.8 years. Future scenario analyses show that if nc-Si film is deposited at a higher rate (i.e., 2-3 nm/s), and at the same time the conversion efficiency reaches 10%, the energy-payback time could drop by 30%.

  10. Single-Step Non-Thermal Plasma Synthesis of 3C-SiC Nanoparticles...

    Office of Scientific and Technical Information (OSTI)

    Single-Step Non-Thermal Plasma Synthesis of 3C-SiC Nanoparticles Citation Details In-Document Search Title: Single-Step Non-Thermal Plasma Synthesis of 3C-SiC Nanoparticles ...