Powered by Deep Web Technologies
Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Swiss Federal Laboratories for Materials Science and Technology Advances in Thin Film PV: CIGS & CdTe  

E-Print Network [OSTI]

and Photovoltaics Thin film solar cells based on compound semiconductor absorbers: CIGS and CdTe High efficiency and Photovoltaics Swiss Federal Laboratories for Material Science and Technology Key issues in high efficiency CIGSTe Laboratory for Thin Films and Photovoltaics Empa- Swiss Federal Laboratories for Material Science

Canet, Léonie

2

Sandia National Laboratories: thin-film PV materials (Si CIGS CdTe)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1developmentturbineredox-activeNational SolartSSLPV materials (Si CIGS CdTe) Sandians

3

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS Submitted by Kuo-Jui Hsiao ELECTRON- REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS SOLAR CELLS The CdTe thin-film solar cell has a large absorption coefficient and high theoretical

Sites, James R.

4

NUMERICAL MODELING OF CIGS AND CdTe SOLAR CELLS: SETTING THE BASELINE  

E-Print Network [OSTI]

NUMERICAL MODELING OF CIGS AND CdTe SOLAR CELLS: SETTING THE BASELINE M. Gloeckler, A. Consequently specific baseline parameters for CIGS and CdTe are proposed. The modeling results important complications that are often found in experimental CIGS and CdTe solar cells. 1. INTRODUCTION

Sites, James R.

5

Thin-film CdTe and CuInSe{sub 2} photovoltaic technologies  

SciTech Connect (OSTI)

Total-area conversion efficiency of 15%--15.8% have been achieved for thin-film CdTe and CIS solar cells. Modules with power output of 5--53 W have been demonstrated by several groups world-wide. Critical processes and reaction pathways for achieving excellent PV devices have been eluciated. Research, development and technical issues have been identified, which could result in potential improvements in device and module performance. A 1-kW thin-film CdTe array has been installed and is being tested. Multimegawatt thin-film CdTe manufacturing plants are expected to be completed in 1-2 years.

Ullal, H.S.; Zweibel, K.; von Roedern, B.G.

1993-08-01T23:59:59.000Z

6

Development of CdTe thin film solar cells on flexible foil substrates.  

E-Print Network [OSTI]

??Cadmium telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal band gap of 1.45 eV, its high optical absorption… (more)

Hodges, Deidra Ranel

2009-01-01T23:59:59.000Z

7

Electron-reflector strategy for CdTe thin-film solar cells.  

E-Print Network [OSTI]

??The CdTe thin-film solar cell has a large absorption coefficient and high theoretical efficiency. Moreover, large-area photovoltaic panels can be economically fabricated. These features potentially… (more)

Hsiao, Kuo-Jui

2010-01-01T23:59:59.000Z

8

Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-film CdTe Caroline R. Corwine,1  

E-Print Network [OSTI]

Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-film CdTe Caroline R. Corwine Laboratory, Golden, CO 80401 ABSTRACT Polycrystalline thin-film CdTe is one of the leading materials used various process steps alter defect states in the CdTe layer. Low-temperature photoluminescence (PL

Sites, James R.

9

Studies on optoelectronic properties of DC reactive magnetron sputtered CdTe thin films  

SciTech Connect (OSTI)

Cadmium telluride continues to be a leading candidate for the development of cost effective photovoltaics for terrestrial applications. In the present work two individual metallic targets of Cd and Te were used for the deposition of CdTe thin films on mica substrates from room temperature to 300 °C by DC reactive magnetron sputtering method. XRD patterns of CdTe thin films deposited on mica substrates exhibit peaks at 2? = 27.7°, 46.1° and 54.6°, which corresponds to reflection on (1 1 1), (2 2 0) and (3 1 1) planes of CdTe cubic structure. The intensities of XRD patterns increases with the increase of substrate temperature upto 150 °C and then it decreases at higher substrate temperatures. The conductivity of CdTe thin films measured from four probe method increases with the increase of substrate temperature. The activation energies (?E) are found to be decrease with the increase of substrate temperature. The optical transmittance spectra of CdTe thin films deposited on mica have a clear interference pattern in the longer wavelength region. The films have good transparency (T > 85 %) exhibiting interference pattern in the spectral region between 1200 – 2500 nm. The optical band gap of CdTe thin films are found to be in the range of 1.48 – 1.57. The refractive index, n decreases with the increase of wavelength, ?. The value of n and k increases with the increase of substrate temperature.

Kumar, B. Rajesh, E-mail: rajphyind@gmail.com [Department of Physics, Sri Venkateswara University, Tirupati - 517 502, A.P, India and Department of Physics, Sri Krishnadevaraya University, Anantapur - 515 003, A.P (India); Hymavathi, B.; Rao, T. Subba [Department of Physics, Sri Krishnadevaraya University, Anantapur - 515 003, A.P (India)

2014-01-28T23:59:59.000Z

10

p-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells  

E-Print Network [OSTI]

p-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells Ken K. Chin n Department of Physics and Apollo CdTe Solar Energy Research Center, NJIT, Newark, NJ 07058, USA a r t i c l e May 2010 Keywords: CdTe p-Doping Hole density Non-shallow Acceptor Activation energy a b s t r a c

11

Growth of CdTe thin films on graphene by close-spaced sublimation method  

SciTech Connect (OSTI)

CdTe thin films grown on bi-layer graphene were demonstrated by using the close-spaced sublimation method, where CdTe was selectively grown on the graphene. The density of the CdTe domains was increased with increasing the number of the defective sites in the graphene, which was controlled by the duration of UV exposure. The CdTe growth rate on the bi-layer graphene electrodes was 400?nm/min with a bandgap energy of 1.45–1.49?eV. Scanning electron microscopy, micro-Raman spectroscopy, micro-photoluminescence, and X-ray diffraction technique were used to confirm the high quality of the CdTe thin films grown on the graphene electrodes.

Jung, Younghun; Yang, Gwangseok; Kim, Jihyun, E-mail: hyunhyun7@korea.ac.kr [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of)] [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Chun, Seungju; Kim, Donghwan [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)] [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

2013-12-02T23:59:59.000Z

12

CARRIER COLLECTION IN THIN-FILM CDTE SOLAR CELLS: THEORY AND EXPERIMENT  

E-Print Network [OSTI]

-n junction solar cell theory predicts that the total solar cell current in the light, JLCARRIER COLLECTION IN THIN-FILM CDTE SOLAR CELLS: THEORY AND EXPERIMENT A.E. Delahoy, Z. Cheng and K.K. Chin Department of Physics, Apollo Solar Energy Research Center, New Jersey Institute

13

1. INTRODUCTION Polycrystalline CdTe thin films solar cells have shown long  

E-Print Network [OSTI]

to the solar panel that can be adapted to any kind of shape and is easy to deploy in space. We have developed1. INTRODUCTION Polycrystalline CdTe thin films solar cells have shown long term stable performance for the solar cell, therefore high specific power (ratio of out- put power to the weight) solar cells

Romeo, Alessandro

14

Preliminary study of CdTe and CdTe:Cu thin films nanostructures deposited by using DC magnetron sputtering  

SciTech Connect (OSTI)

Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 °C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 °C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV.

Marwoto, Putut; Made, D. P. Ngurah; Sugianto [Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia)] [Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Wibowo, Edy; Astuti, Santi Yuli; Aryani, Nila Prasetya [Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia)] [Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Othaman, Zulkafli [Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)] [Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)

2013-09-03T23:59:59.000Z

15

Effect of Shunts on Thin-Film CdTe Module Performance. Galymzhan T. Koishiyev, James R. Sites  

E-Print Network [OSTI]

Effect of Shunts on Thin-Film CdTe Module Performance. Galymzhan T. Koishiyev, James R. Sites circuit model is used to analyze the impact of shunts on basic performance parameters of a CdTe thin with each other in their effect on the module. To address these questions, a 2-D circuit model of a CdTe

Sites, James R.

16

Investigation of deep level defects in CdTe thin films  

SciTech Connect (OSTI)

In the past few years, a large body of work has been dedicated to CdTe thin film semiconductors, as the electronic and optical properties of CdTe nanostructures make them desirable for photovoltaic applications. The performance of semiconductor devices is greatly influenced by the deep levels. Knowledge of parameters of deep levels present in as-grown materials and the identification of their origin is the key factor in the development of photovoltaic device performance. Photo Induced Current Transient Spectroscopy technique (PICTS) has proven to be a very powerful method for the study of deep levels enabling us to identify the type of traps, their activation energy and apparent capture cross section. In the present work, we report the effect of growth parameters and LASER irradiation intensity on the photo-electric and transport properties of CdTe thin films prepared by Close-Space Sublimation method using SiC electrical heating element. CdTe thin films were grown at three different source temperatures (630, 650 and 700 °C). The grown films were irradiated with Nd:YAG LASER and characterized by Photo-Induced Current Transient Spectroscopy, Photocurrent measurementand Current Voltage measurements. The defect levels are found to be significantly influenced by the growth temperature.

Shankar, H.; Castaldini, A. [Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy); Dieguez, E.; Rubio, S. [Crystal Growth Lab, Department of Materials Physics, Faculty of Science, University Autonoma of Madrid, Ciudad Universitaria de Cantoblanco, 28049, Madrid (Spain); Dauksta, E.; Medvid, A. [Institute of Technical Physics, Riga Technical University, 14 Azenes Str, Riga, Latvia, Department of Materials (Latvia); Cavallini, A. [Department of Physics and Astronomy,University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy)

2014-02-21T23:59:59.000Z

17

High Efficiency Thin Film CdTe and a-Si Based Solar Cells Final Technical Report for the Period  

E-Print Network [OSTI]

High Efficiency Thin Film CdTe and a-Si Based Solar Cells Final Technical Report for the PeriodTe-based thin-film solar cells and on high efficiency a-Si-based thin-film solar cells. Phases I and II have the performance of a-SiGe solar cells and properties of a-SiGe single layer films with different Ge contents

Deng, Xunming

18

High Efficiency Thin Film CdTe and a-Si Based Solar Cells Annual Technical Report for the Period  

E-Print Network [OSTI]

High Efficiency Thin Film CdTe and a-Si Based Solar Cells Annual Technical Report for the Period solar cells and on high efficiency a-Si-based thin-film solar cells. The effort on CdTe- based materials the performance of a-SiGe solar cells and properties of a-SiGe single layer films with different Ge contents

Deng, Xunming

19

First-Principles Study of Back Contact Effects on CdTe Thin Film Solar Cells  

SciTech Connect (OSTI)

Forming a chemically stable low-resistance back contact for CdTe thin-film solar cells is critically important to the cell performance. This paper reports theoretical study of the effects of the back-contact material, Sb{sub 2}Te{sub 3}, on the performance of the CdTe solar cells. First-principles calculations show that Sb impurities in p-type CdTe are donors and can diffuse with low diffusion barrier. There properties are clearly detrimental to the solar-cell performance. The Sb segregation into the grain boundaries may be required to explain the good efficiencies for the CdTe solar cells with Sb{sub 2}Te{sub 3} back contacts.

Du, Mao-Hua [ORNL

2009-01-01T23:59:59.000Z

20

Room temperature ferromagnetism in Co defused CdTe nanocrystalline thin films  

SciTech Connect (OSTI)

Nanocrystalline Co defused CdTe thin films were prepared using electron beam evaporation technique by depositing CdTe/Co/CdTe stacked layers with different Co thickness onto glass substrate at 373 K followed by annealing at 573K for 2 hrs. Structural, morphological and magnetic properties of of all the Co defused CdTe thin films has been investigated. XRD pattern of all the films exhibited zinc blende structure with <111> preferential orientation without changing the crystal structure of the films. The grain size of the films increased from 31.5 nm to 48.1 nm with the increase of Co layer thickness from 25nm to 100nm. The morphological studies showed that uniform texture of the films and the presence of Co was confirmed by EDAX. Room temperature magnetization curves indicated an improved ferromagnetic behavior in the films with increase of the Co thickness.

Rao, N. Madhusudhana; Kaleemulla, S.; Begam, M. Rigana [Materials Physics Division, School of Advanced Sciences, VIT University, Vellore - 632 014 (India)

2014-04-24T23:59:59.000Z

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Identification of critical stacking faults in thin-film CdTe solar cells  

SciTech Connect (OSTI)

Cadmium telluride (CdTe) is a p-type semiconductor used in thin-film solar cells. To achieve high light-to-electricity conversion, annealing in the presence of CdCl{sub 2} is essential, but the underlying mechanism is still under debate. Recent evidence suggests that a reduction in the high density of stacking faults in the CdTe grains is a key process that occurs during the chemical treatment. A range of stacking faults, including intrinsic, extrinsic, and twin boundary, are computationally investigated to identify the extended defects that limit performance. The low-energy faults are found to be electrically benign, while a number of higher energy faults, consistent with atomic-resolution micrographs, are predicted to be hole traps with fluctuations in the local electrostatic potential. It is expected that stacking faults will also be important for other thin-film photovoltaic technologies.

Yoo, Su-Hyun; Walsh, Aron, E-mail: a.walsh@bath.ac.uk [Global E3 Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Butler, Keith T. [Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Soon, Aloysius [Global E3 Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Abbas, Ali; Walls, John M., E-mail: j.m.wall@loughborough.ac.uk [Centre for Renewable Energy Systems Technology, School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

2014-08-11T23:59:59.000Z

22

Chapter 1.19: Cadmium Telluride Photovoltaic Thin Film: CdTe  

SciTech Connect (OSTI)

The chapter reviews the history, development, and present processes used to fabricate thin-film, CdTe-based photovoltaic (PV) devices. It is intended for readers who are generally familiar with the operation and material aspects of PV devices but desire a deeper understanding of the process sequences used in CdTe PV technology. The discussion identifies why certain processes may have commercial production advantages and how the various process steps can interact with each other to affect device performance and reliability. The chapter concludes with a discussion of considerations of large-area CdTe PV deployment including issues related to material availability and energy-payback time.

Gessert, T. A.

2012-01-01T23:59:59.000Z

23

Electron and hole drift mobility measurements on thin film CdTe solar cells Qi Long, Steluta A. Dinca, E. A. Schiff, Ming Yu, and Jeremy Theil  

E-Print Network [OSTI]

.1063/1.2220491 Lock-in thermography and nonuniformity modeling of thin-film CdTe solar cells Appl. Phys. Lett. 84, 729

Schiff, Eric A.

24

Analysis of Alternate Methods to Obtain Stabilized Power Performance of CdTe and CIGS PV Modules (Presentation)  

SciTech Connect (OSTI)

This presentation outlines an analysis of alternate methods to obtain stabilized power performance of CdTe and CIGS PV modules.

del Cueto, J. A.; Deline, C. A.; Rummel, S.

2011-02-01T23:59:59.000Z

25

Epitaxial growth of CdTe oriented thin films, infrared characterization and possible applications to photo-voltaic cells  

E-Print Network [OSTI]

573 Epitaxial growth of CdTe oriented thin films, infrared characterization and possible décembre 1979, accepté le 12 décembre 1979) Résumé. 2014 Des films minces orientés de CdTe, d de CdTe cubique dont la face (111), polie mécaniquement et décapée chimiquement, est préalablement

Paris-Sud XI, Université de

26

Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition  

SciTech Connect (OSTI)

CdTe thin film has been grown by metalorganic chemical vapor deposition (MOCVD) on Ni(100) substrate. Using x-ray pole figure measurements we observed the epitaxial relationship of {111}CdTe// {001}Ni with [110]CdTe//[010]Ni and [112] CdTe//[100]Ni. The 12 diffraction peaks in the (111) pole figure of CdTe film and their relative positions with respect to the four peak positions in the (111) pole figure of Ni substrate are consistent with four equivalent orientational domains of CdTe with three to four superlattice match of about 0.7% in the [110] direction of CdTe and the [010] direction of Ni. The electron backscattered diffraction (EBSD) images show that the CdTe domains are 30 degrees orientated from each other.

GIARE, C [Rensselaer Polytechnic Institute (RPI); RAO, S [Rensselaer Polytechnic Institute (RPI); RILEY, M [Rensselaer Polytechnic Institute (RPI); CHEN, L [Rensselaer Polytechnic Institute (RPI); Goyal, Amit [ORNL; BHAT, I [Rensselaer Polytechnic Institute (RPI); LU, T [Rensselaer Polytechnic Institute (RPI); WANG, G [Rensselaer Polytechnic Institute (RPI)

2012-01-01T23:59:59.000Z

27

The Roles of Cu Impurity States in CdTe Thin Film Solar Cells Ken K. Chin1  

E-Print Network [OSTI]

, to a better p-type, to insulating, and then to n-type -- is all due to different levels of Cu involvement treatment temperature. #12;2 I. Introduction CdTe based solar panels have emerged in recent years1 The Roles of Cu Impurity States in CdTe Thin Film Solar Cells Ken K. Chin1 , T.A. Gessert2

28

Design and optimization of large area thin-film CdTe detector for radiation therapy imaging applications  

SciTech Connect (OSTI)

Purpose: The authors investigate performance of thin-film cadmium telluride (CdTe) in detecting high-energy (6 MV) x rays. The utilization of this material has become technologically feasible only in recent years due to significant development in large area photovoltaic applications. Methods: The CdTe film is combined with a metal plate, facilitating conversion of incoming photons into secondary electrons. The system modeling is based on the Monte Carlo simulations performed to determine the optimized CdTe layer thickness in combination with various converter materials. Results: The authors establish a range of optimal parameters producing the highest DQE due to energy absorption, as well as signal and noise spatial spreading. The authors also analyze the influence of the patient scatter on image formation for a set of detector configurations. The results of absorbed energy simulation are used in device operation modeling to predict the detector output signal. Finally, the authors verify modeling results experimentally for the lowest considered device thickness. Conclusions: The proposed CdTe-based large area thin-film detector has a potential of becoming an efficient low-cost electronic portal imaging device for radiation therapy applications.

Parsai, E. Ishmael; Shvydka, Diana; Kang, Jun [Department of Radiation Oncology, University of Toledo Health Sciences Campus, 3000 Arlington Avenue, Toledo, Ohio 43614 (United States); Department of Radiation Oncology, John Hopkins University, 401 N Broadway, Suite 1440, Baltimore, Maryland 21231 (United States)

2010-08-15T23:59:59.000Z

29

Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications; Preprint  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism in Layered NbS2 andThe1 MembersStability| EMSL Dependency

30

Development of high efficieny CdTe thin-film solar cell.  

E-Print Network [OSTI]

??CdTe films were deposited by sputtering technique and were then carried out by CdCl2 treatment. The SEM micrographs show that the grain sizes of the… (more)

Huang, Yein-rein

2011-01-01T23:59:59.000Z

31

High Efficiency CdTe/CdS Thin Film Solar Cells Prepared by Treating CdTe Films with a Freon Gas in Substitution of CdCl2  

E-Print Network [OSTI]

High Efficiency CdTe/CdS Thin Film Solar Cells Prepared by Treating CdTe Films with a Freon Gas delle Scienze, 37/A-43010 Fontanini, Parma, Italy ABSTRACT: CdTe/CdS thin film solar cells have reached in the preparation of high efficiency CdTe/CdS solar cells is the activation treatment of CdTe film. Most research

Romeo, Alessandro

32

Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)  

SciTech Connect (OSTI)

Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

Gessert, T. A.

2010-09-01T23:59:59.000Z

33

Theoretical Analysis of Effects of Deep Level, Back Contact, and Absorber Thickness on Capacitance-Voltage Profiling of CdTe Thin-Film Solar Cells  

SciTech Connect (OSTI)

The apparent carrier density profile measured by the capacitance-voltage technique in CdTe thin-film solar cells frequently displays a distinctive U-shape. We show that, even assuming a uniform carrier density, such a U-shape may arise from deep levels, a non-ohmic back-contact, and a thin absorber, which are commonly present in practical CdTe thin-film solar cells. A thin CdTe absorber contributes to the right branch of the U-shape due to a punch-through effect at reverse or zero biases, when the CdTe absorber is nearly fully depleted. A rectifying back-contact contributes to both branches of the U-shape due to voltage sharing with the front junction under a forward bias and early punch-through under a reverse bias. Deep levels contribute to the right branch, but also raise the bottom of the U-shape, leading to an overestimate of carrier density.

Li, J. V.; Halverson, A. F.; Sulima, O. V.; Bansal, S.; Burst, J. M.; Barnes, T. M.; Gessert, T. A.; Levi, D. H.

2012-05-01T23:59:59.000Z

34

Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint  

SciTech Connect (OSTI)

The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

2011-09-01T23:59:59.000Z

35

Mat. Res. Soc. Symp. Proc. Vol. 668 @ 2001 Materials Research Society Influence of proton irradiation and development of flexible CdTe solar cells on polyimide  

E-Print Network [OSTI]

power (defined as the ratio of output electrical power to the solar module weight). Thin film solar cells on polymer films can yield more than 2- kW/kg specific power. CIGS solar cells of about 10 to 12 irradiation and development of flexible CdTe solar cells on polyimide A. Romeo, D.L. Bätzner, H. Zogg and A

Romeo, Alessandro

36

High Efficiency CdTe and CIGS Thin Film Solar Cells: Highlights of the Technologies Challenges (Presentation)  

Office of Scientific and Technical Information (OSTI)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinan antagonist Journal Article: Crystal structureComposite--FORRemarksHEATING DISTRIBUTIONS INDOBEH

37

Correlations of Capacitance-Voltage Hysteresis with Thin-Film CdTe Solar Cell Performance During Accelerated Lifetime Testing  

SciTech Connect (OSTI)

In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

Albin, D.; del Cueto, J.

2011-03-01T23:59:59.000Z

38

Research Leading to High Throughput Manufacturing of Thin-Film CdTe PV Modules: Annual Subcontract Report, September 2004--September 2005  

SciTech Connect (OSTI)

Specific overall objectives of this subcontract are improvement in baseline field performance of manufactured CdTe PV modules while reducing environmental, health and safety risk in the manufacturing environment. Project objectives focus on four broad categories: (1) development of advanced front-contact window layers, (2) improved semiconductor film deposition, (3) development of improved accelerated life test procedures that indicate baseline field performance, and (4) reduction of cadmium-related environmental, health and safety risks. First Solar has significantly increased manufacturing capacity from less than 2 MW/yr to more than 20 MW/yr, while increasing the average module total-area power conversion efficiency from 7% to >9%. First Solar currently manufactures and sells 50-65-W thin-film CdTe PV modules at a rate of about 1.9 MW/month. Sales backlog (booked sales less current inventory divided by production rate) is more than a year. First Solar is currently building new facilities and installing additional equipment to increase production capacity by 50 MW/yr; the additional capacity is expected to come on line in the third quarter of 2006.

Powell, R. C.

2006-04-01T23:59:59.000Z

39

High-Throughput Thin Film Approach for Screening of Temperature-Pressure-Composition Phase Space  

SciTech Connect (OSTI)

Many solar energy technologies, for example CIGS and CdTe photovoltaics, utilize materials in thin film form. The equilibrium phase diagrams for these and other more novel solar energy materials are not known or are irrelevant because of the non-equilibrium character of the thin film growth processes. We demonstrate a high-throughput thin film approach for screening of temperature-pressure-composition phase diagrams and phase spaces. The examples in focus are novel solar absorbers Cu-N, Cu-O and p-type transparent conductors in the Cr2O3-MnO system. The composition axis of the Cr2O3-MnO phase diagram was screened using a composition spread method. The temperature axis of the Mn-O phase diagram was screened using a temperature spread method. The pressure axes of the Cu-N and Cu-O phase diagrams were screened using rate spread method with the aid of non-equilibrium growth phenomena. Overall these three methods constitute an approach to high-throughput screening of inorganic thin film phase diagrams. This research is supported by U.S. Department of Energy as a part of two NextGen Sunshot projects and an Energy Frontier Research Center.

Zakutayev, A.; Subramaniyan, A.; Caskey, C. M.; Ndione, P. F.; Richards, R. M.; O'Hayre, R.; Ginley, D. S.

2013-01-01T23:59:59.000Z

40

Performance predictions for monolithic, thin-film CdTe/Ge tandem solar cells  

E-Print Network [OSTI]

Performance predictions for monolithic, thin-film CdTe/Ge tandem solar cells D.L. Pulfrey*, J. Dell): pulfrey@ece.ubc.ca ABSTRACT Cadmium telluride thin-film solar cells are now commercially available be attainable. 1. INTRODUCTION Thin film solar cells based on polycrystalline CdTe have been investigated

Pulfrey, David L.

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Novel Materials Development for Polycrystalline Thin-Film Solar Cells: Final Subcontract Report, 26 July 2004--15 June 2008  

SciTech Connect (OSTI)

Focus on player interfacial assessment using Schottky barrier and heterojunction theory, and analysis of p-windows for CIGS and CdTe cells.

Keszler, D. A.; Wager, J. F.

2008-11-01T23:59:59.000Z

42

DISSERTATION Role of the Cu-O Defect in CdTe Solar Cells  

E-Print Network [OSTI]

OF THE CU-O DEFECT COMPLEX IN CDTE SOLAR CELLS Thin-film CdTe is one of the leading materials used the defects present in thin-film CdTe deposited for solar cells. One key defect seen in the thin-film CdDISSERTATION Role of the Cu-O Defect in CdTe Solar Cells Submitted by Caroline R. Corwine

Sites, James R.

43

NREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells (Fact Sheet)  

SciTech Connect (OSTI)

Researchers at the National Renewable Energy Laboratory (NREL) are finding new ways to manufacture thin-film solar cells made from copper, indium, gallium, and selenium - called CIGS cells - that are different than conventional CIGS solar cells. Their use of high-temperature glass, designed by SCHOTT AG, allows higher fabrication temperatures, opening the door to new CIGS solar cells employing light-absorbing materials with wide 'bandgaps.'

Not Available

2012-09-01T23:59:59.000Z

44

US polycrystalline thin film solar cells program  

SciTech Connect (OSTI)

The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R D on copper indium diselenide and cadmium telluride thin films. The objective of the Program is to support research to develop cells and modules that meet the US Department of Energy's long-term goals by achieving high efficiencies (15%-20%), low-cost ($50/m{sup 2}), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The US Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe{sub 2} and CdTe with subcontracts to start in Spring 1990. 23 refs., 5 figs.

Ullal, H.S.; Zweibel, K.; Mitchell, R.L. (Solar Energy Research Inst., Golden, CO (USA)) [Solar Energy Research Inst., Golden, CO (USA)

1989-11-01T23:59:59.000Z

45

Technology support for high-throughput processing of thin-film CdTe PV modules: Annual technical report, Phase 1, 1 April 1998--31 March 1999  

SciTech Connect (OSTI)

This report describes work performed by First Solar, L.L.C., during Phase 1 of this 3-year subcontract. The research effort of this subcontract is divided into four areas: (1) process and equipment development, (2) efficiency improvement, (3) characterization and analysis, and (4) environmental, health, and safety. As part of the process development effort, the output of the pilot-production facility was increased. More than 6,200 8-ft{sup 2} CdS/CdTe plates were produced during Phase 1--more than double the total number produced prior to Phase 1. This increase in pilot-production rate was accomplished without a loss in the PV conversion efficiency: the average total-area AM1.5 efficiency of sub-modules produced during the reporting period was 6.4%. Several measurement techniques, such as large-area measurement of CdS thickness, were developed to aid process improvement, and the vapor-transport deposition method was refined. CdTe thickness uniformity and reproducibility were improved. From a population of more than 1,100 plates, the mean standard deviation within a plate was 7.3% and the standard deviation of individual-plate averages was 6.8%. As part of the efficiency-improvement task, research was done on devices with thin-CdS and buffer layers. A cell with 13.9% efficiency was produced on a high-quality substrate, and higher than 12% efficiency was achieved with a cell with no CdS layer. A number of experiments were performed as part of the characterization and analysis task. The temperature dependence of CdTe modules was investigated; the power output was found to be relatively insensitive (<5%) to temperature in the 25 to 50 C range. As part of the characterization and analysis task, considerable effort was also given to reliability verification and improvement. The most carefully monitored array, located at the NREL, was found to have unchanged power output within the margin of error of measurement (5%) after 5 years in the field. The first round of National CdTe Team stability tests were concluded. One back-contact formulation resulted in cells that increased in efficiency as a result of 9,700 hours of light soaking. As part of the environmental, health, and safety task, an emissions survey was performed for the pilot-production facility. For production of 360 modules/day, it was predicted that the cadmium emissions would be only 0.015% of the level that would require any permitting; however, methanol emissions may require permitting if anticipated process changes are not implemented. Process improvements in edge delete, CdS material preparation, waste compaction, CdCl{sub 2}-vapor collection, and wastewater treatment were made, resulting in reduced costs, reduced emissions, and improved operator safety.

Rose, D.H.; Powell, R.C.; Grecu, D.; Jayamaha, U.; Hanak, J.J.; Bohland, J.; Smigielski, K.; Dorer, G.L.

1999-10-25T23:59:59.000Z

46

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa  

E-Print Network [OSTI]

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa , Alessio in the fabrication of high efficiency CdTe/CdS thin film solar cells. Usually, it is done first by etching the Cd: Back Contact, CdTe, Thin Film 1 INTRODUCTION The back contact in the CdTe/CdS thin film solar cell

Romeo, Alessandro

47

CdTe/CdS Thin Film Solar Cells Fabricated on Flexible Substrates.  

E-Print Network [OSTI]

??Cadmium Telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal bandgap of 1.45 eV and its high optical absorption… (more)

Palekis, Vasilios

2011-01-01T23:59:59.000Z

48

Thin film hydrogen sensor  

DOE Patents [OSTI]

A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

1999-03-23T23:59:59.000Z

49

Thin film hydrogen sensor  

DOE Patents [OSTI]

A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

Cheng, Yang-Tse (Rochester Hills, MI); Poli, Andrea A. (Livonia, MI); Meltser, Mark Alexander (Pittsford, NY)

1999-01-01T23:59:59.000Z

50

Polycrystalline thin-film technology: Recent progress in photovoltaics  

SciTech Connect (OSTI)

Polycrystalline thin films have made significant technical progress in the past year. Three of these materials that have been studied extensively for photovoltaic (PV) power applications are copper indium diselenide (CuInSe{sub 2}), cadmium telluride (CdTe), and thin-film polycrystalline silicon (x-Si) deposited on ceramic substrates. The first of these materials, polycrystalline thin-film CuInSe{sub 2}, has made some rapid advances in terms of high efficiency and long-term reliability. For CuInSe{sub 2} power modules, a world record has been reported on a 0.4-m{sup 2} module with an aperture-area efficiency of 10.4% and a power output of 40.4 W. Additionally, outdoor reliability testing of CuInSe{sub 2} modules, under both loaded and open-circuit conditions, has resulted in only minor changes in module performance after more than 1000 days of continuous exposure to natural sunlight. CdTe module research has also resulted in several recent improvements. Module performance has been increased with device areas reaching nearly 900 cm{sup 2}. Deposition has been demonstrated by several different techniques, including electrodeposition, spraying, and screen printing. Outdoor reliability testing of CdTe modules was also carried out under both loaded and open-circuit conditions, with more than 600 days of continuous exposure to natural sunlight. These tests were also encouraging and indicated that the modules were stable within measurement error. The highest reported aperture-area module efficiency for CdTe modules is 10%; the semiconductor material was deposited by electrodeposition. A thin-film CdTe photovoltaic system with a power output of 54 W has been deployed in Saudi Arabia for water pumping. The Module Development Initiative has made significant progress in support of the Polycrystalline Thin-Film Program in the past year, and results are presented in this paper.

Mitchell, R.L.; Zweibel, K.; Ullal, H.S.

1991-12-01T23:59:59.000Z

51

Barrier Coatings for Thin Film Solar Cells: Final Subcontract Report, September 1, 2002 -- January 30, 2008  

SciTech Connect (OSTI)

This program has involved investigations of the stability of CdTe and copper-indium-gallium-diselenide (CIGS) solar cells under damp heat conditions and effects of barrier coatings.

Olsen, L. C.

2010-03-01T23:59:59.000Z

52

Thin Film Photovoltaics Research  

Broader source: Energy.gov [DOE]

The U.S. Department of Energy (DOE) supports research and development of four thin-film technologies on the path to achieving cost-competitive solar energy, including:

53

Characterization of the Electronic and Chemical Structure at the Thin Film Solar Cell Interfaces: June 2005 -- June 2009  

SciTech Connect (OSTI)

Study using photoelectron spectroscopy, inverse photoemission, and X-ray absorption and emission to derive the electronic structure of interfaces in CIGSS and CdTe thin-film solar cells.

Heske, C.

2009-09-01T23:59:59.000Z

54

ANALYSIS OF CDTE ACTIVATION TREATMENT WITH A NOVEL APPROACH Andrei Salavei^, Ivan Rimmaudo^, Fabio Piccinelli*, Daniele Menossi+  

E-Print Network [OSTI]

ANALYSIS OF CDTE ACTIVATION TREATMENT WITH A NOVEL APPROACH Andrei Salavei^, Ivan Rimmaudo^, Fabio approach for CdTe activation treatment. Starting from a baseline of CdTe devices made with CdCl2 activation­voltage characteristics) of finished devices. Keywords: CdTe, CdCl2, High-Efficiency. 1 INTRODUCTION CdTe thin film solar

Romeo, Alessandro

55

Performance and Loss Analyses of High-Efficiency CBD-ZnS/Cu(In1-xGax)Se2 Thin-Film Solar Cells  

E-Print Network [OSTI]

1 Performance and Loss Analyses of High-Efficiency CBD-ZnS/Cu(In1-xGax)Se2 Thin-Film Solar Cells, Setagaya-ku, Tokyo 157-8572, Japan (Received ) KEYWORDS: ZnS buffer, Cu(In,Ga)Se2, thin-film solar cells alternative to CdS in polycrystalline thin-film Cu(In1-xGax)Se2 (CIGS) solar cells. Cells with efficiency

Sites, James R.

56

Sandia National Laboratories: thin-film battery  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1developmentturbineredox-activeNational SolartSSLPV materials (Si CIGS CdTe)

57

Thin Film Reliability SEMICONDUCTORS  

E-Print Network [OSTI]

Thin Film Reliability SEMICONDUCTORS Our goal is to develop new ways to evaluate the reliability $250 billion per year. As semiconductor devices become ultra miniaturized, reliability testing becomes-world conditions as possible will enable product designers to better balance performance and reliability

58

Thin film photovoltaic cell  

DOE Patents [OSTI]

A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

Meakin, John D. (Newark, DE); Bragagnolo, Julio (Newark, DE)

1982-01-01T23:59:59.000Z

59

Epitaxial thin films  

DOE Patents [OSTI]

Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

2006-04-25T23:59:59.000Z

60

Thin-film optical initiator  

DOE Patents [OSTI]

A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

Erickson, Kenneth L. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Polycrystalline thin-film solar cells and modules  

SciTech Connect (OSTI)

This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG&E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

1991-12-01T23:59:59.000Z

62

Polycrystalline thin-film solar cells and modules  

SciTech Connect (OSTI)

This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

1991-12-01T23:59:59.000Z

63

Flexible cadmium telluride thin films grown on electron-beam-irradiated graphene/thin glass substrates  

SciTech Connect (OSTI)

We demonstrate the close-spaced sublimation growth of polycrystalline cadmium telluride (CdTe) thin films on a flexible graphene electrode/thin glass substrate structure. Prior to the growth of CdTe films, chemical-vapor-deposited graphene was transferred onto a flexible glass substrate and subjected to electron-beam irradiation at an energy of 0.2?MeV in order to intentionally introduce the defects into it in a controlled manner. Micro-Raman spectroscopy and sheet resistance measurements were employed to monitor the damage and disorder in the electron-beam irradiated graphene layers. The morphology and optical properties of the CdTe thin films deposited on a graphene/flexible glass substrate were systematically characterized. The integration of the defective graphene layers with a flexible glass substrate can be a useful platform to grow various thin-film structures for flexible electronic and optoelectronic devices.

Seo, Won-Oh; Kim, Jihyun, E-mail: hyunhyun7@korea.ac.kr [Department of Chemical and Biological Engineering, Korea University, Anam-dong, Sungbuk-gu, Seoul 136-713 (Korea, Republic of); Koo, Yong Hwan; Kim, Byungnam; Lee, Byung Cheol [Radiation Integrated System Research Division, Korea Atomic Energy Research Institute (KAERI), Daejeon 305-353 (Korea, Republic of); Kim, Donghwan [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

2014-08-25T23:59:59.000Z

64

Biomimetic thin film deposition  

SciTech Connect (OSTI)

Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

1995-09-01T23:59:59.000Z

65

Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence  

SciTech Connect (OSTI)

It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, inline tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

2011-01-01T23:59:59.000Z

66

Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence: Preprint  

SciTech Connect (OSTI)

It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, in-line tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

2011-07-01T23:59:59.000Z

67

Thin film composite electrolyte  

DOE Patents [OSTI]

The invention is a thin film composite solid (and a means for making such) suitable for use as an electrolyte, having a first layer of a dense, non-porous conductive material; a second layer of a porous ionic conductive material; and a third layer of a dense non-porous conductive material, wherein the second layer has a Coefficient of thermal expansion within 5% of the coefficient of thermal expansion of the first and third layers.

Schucker, Robert C. (The Woodlands, TX)

2007-08-14T23:59:59.000Z

68

Thin-Film Reliability Trends Toward Improved Stability: Preprint  

SciTech Connect (OSTI)

Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (Rd) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2+/-0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

Jordan, D. C.; Kurtz, S. R.

2011-07-01T23:59:59.000Z

69

Thin-Film Reliability Trends Toward Improved Stability  

SciTech Connect (OSTI)

Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (R{sub d}) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2 {+-} 0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

Jordan, D. C.; Kurtz, S. R.

2011-01-01T23:59:59.000Z

70

Thin film photovoltaic device  

DOE Patents [OSTI]

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

Catalano, A.W.; Bhushan, M.

1982-08-03T23:59:59.000Z

71

Thin film photovoltaic device  

DOE Patents [OSTI]

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

Catalano, Anthony W. (Wilmington, DE); Bhushan, Manjul (Wilmington, DE)

1982-01-01T23:59:59.000Z

72

Thin film hydrogen sensor  

DOE Patents [OSTI]

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

Lauf, Robert J. (Oak Ridge, TN); Hoffheins, Barbara S. (Knoxville, TN); Fleming, Pamela H. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

73

Thin film ion conducting coating  

DOE Patents [OSTI]

Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

Goldner, Ronald B. (Lexington, MA); Haas, Terry (Sudbury, MA); Wong, Kwok-Keung (Watertown, MA); Seward, George (Arlington, MA)

1989-01-01T23:59:59.000Z

74

Thin film hydrogen sensor  

DOE Patents [OSTI]

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

Lauf, R.J.; Hoffheins, B.S.; Fleming, P.H.

1994-11-22T23:59:59.000Z

75

DISSERTATION EFFECTS OF CONTACT-BASED NON-UNIFORMITIES IN CDS/CDTE  

E-Print Network [OSTI]

DISSERTATION EFFECTS OF CONTACT-BASED NON-UNIFORMITIES IN CDS/CDTE THIN-FILM SOLAR CELLS Submitted-type CdTe semiconductor has a large work-function and thus tends to form a Schottky barrier when the back and, hence, efficiency. CdTe cells generally employ front contacts made from transparent

Sites, James R.

76

WORKING QUANTUM EFFICIENCY OF CDTE SOLAR CELL Zimeng Cheng  

E-Print Network [OSTI]

in -Si thin film solar cells because there are more defects and surface effects. Figure 1. The diode darkWORKING QUANTUM EFFICIENCY OF CDTE SOLAR CELL Zimeng Cheng 1 , Kwok Lo 2 , Jingong Pan 1 , Dongguo Chen 1 , Tao Zhou 2 , Qi Wang 3 , George E. Georgiou 1 , Ken K. Chin 1 1 Apollo CdTe Solar Energy

77

Processing Materials Devices and Diagnostics for Thin Film Photovoltaics: Fundamental and Manufacturability Issues; Final Report, 5 September 2001 - 31 May 2008  

SciTech Connect (OSTI)

The critical issues addressed in this study on CIGS, CdTe, and a-Si modules will provide the science and engineering basis for developing viable commercial processes and improved module performance.

Birkmire, R. W.; Shafarman, W. N.; Eser, E.; Hegedus, S. S.; McCandless, B. E.; Dobson, K. D.; Bowden, S.

2009-04-01T23:59:59.000Z

78

FLEXIBLE CdTe SOLAR CELLS BY A LOW TEMPERATURE PROCESS ON ITO/ZnO COATED A. Salavei, I. Rimmaudo, F. Piccinelli1  

E-Print Network [OSTI]

FLEXIBLE CdTe SOLAR CELLS BY A LOW TEMPERATURE PROCESS ON ITO/ZnO COATED POLYMERS A. Salavei, I will be discussed. Keywords: Flexible Substrate, CdTe, ITO, Laser Processing, Thin Film Solar Cell 1 INTRODUCTION Thin film solar cells deposited on a flexible substrate are easier to integrate in buildings; they also

Romeo, Alessandro

79

Process Development for High Voc CdTe Solar Cells  

SciTech Connect (OSTI)

This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

Ferekides, C. S.; Morel, D. L.

2011-05-01T23:59:59.000Z

80

Vertically Aligned Nanocomposite Thin Films  

E-Print Network [OSTI]

and epitaxial growth ability on given substrates. In the present work, we investigated unique epitaxial two-phase VAN (BiFeO3)x:(Sm2O3)1-x and (La0.7Sr0.3MnO3)x:(Mn3O4)1-x thin film systems by pulsed laser deposition. These VAN thin films exhibit a highly...

Bi, Zhenxing

2012-07-16T23:59:59.000Z

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Modeling and control of thin film surface morphology: application to thin film solar cells  

E-Print Network [OSTI]

of a p-i-n thin-film solar cell with front transparent con-for thin-film a-si:h solar cells. Progress in Photovoltaics,in thin-film silicon solar cells. Optics Communications,

Huang, Jianqiao

2012-01-01T23:59:59.000Z

82

The Effects of Non-Uniform Electronic Properties on Thin Film Photovoltaics  

E-Print Network [OSTI]

Photovoltaics     There  are  two  requirements  for  designing  a  high  efficiency  photovoltaics.    These   modeling  efforts  are  important  not  only  for  future  efficiency  photovoltaics,  typically  made  with  CIGS  and  CdTe   absorber  layers,  are  promising  sources  of  renewable  energy  due  to  their  high   efficiencies  (

Brown, Gregory Ferguson

2011-01-01T23:59:59.000Z

83

Photoluminescence and Extended X-ray Absorption Fine Structure Studies on CdTe Material.  

E-Print Network [OSTI]

??The direct-band-gap semiconductor CdTe is an important material for fabricating high efficiency, polycrystalline thin-film solar cells in a heterojunction configuration. The outstanding physical properties of… (more)

Liu, Xiangxin

2006-01-01T23:59:59.000Z

84

RealReal heterojunctionsheterojunctions Schottky barrier current  

E-Print Network [OSTI]

is the forward-bias current? #12;33 HeterostructureHeterostructure, thin film, cells: a lower, thin film, cells-EFFICIENCY CDTE AND CIGS THIN-FILM SOLAR CELLS: HIGHLIGHTS AND CHALLENGES. National Renewable Energy Laboratory. #12;44 HJ2:HJ2: CdSCdS/CIGS/CIGS EC EV Wide bandgap window, but what happens at the interfaces

Pulfrey, David L.

85

Epitaxial Thin Film XRD | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series toESnet4:Epitaxial Thin Film XRD Epitaxial Thin Film XRD Systems

86

Semiconductor-nanocrystal/conjugated polymer thin films  

DOE Patents [OSTI]

The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

Alivisatos, A. Paul (Oakland, CA); Dittmer, Janke J. (Munich, DE); Huynh, Wendy U. (Munich, DE); Milliron, Delia (Berkeley, CA)

2010-08-17T23:59:59.000Z

87

Low work function, stable thin films  

DOE Patents [OSTI]

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

2000-01-01T23:59:59.000Z

88

Thin film polymeric gel electrolytes  

DOE Patents [OSTI]

Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

Derzon, Dora K. (1554 Rosalba St. NE., Albuquerque, Bernalillo County, NM 87112); Arnold, Jr., Charles (3436 Tahoe, NE., Albuquerque, Bernalillo County, NM 87111); Delnick, Frank M. (9700 Fleming Rd., Dexter, MI 48130)

1996-01-01T23:59:59.000Z

89

Thin film polymeric gel electrolytes  

DOE Patents [OSTI]

Novel hybrid thin film electrolytes, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities {approx_equal}10{sup {minus}3}{Omega}{sup {minus}1} cm{sup {minus}1} are useful as electrolytes for rechargeable lithium batteries. 1 fig.

Derzon, D.K.; Arnold, C. Jr.; Delnick, F.M.

1996-12-31T23:59:59.000Z

90

Diffusion of Te vacancy and interstitials of Te, Cl, O, S, P and Sb in CdTe: A density functional theory study  

E-Print Network [OSTI]

Diffusion of Te vacancy and interstitials of Te, Cl, O, S, P and Sb in CdTe: A density functional profiles in CdTe of native, Te adatom and vacancy, and anionic non-native interstitial adatoms P, Sb, O, S B.V. All rights reserved. 1. Introduction Cadmium telluride (CdTe) based thin films have emerged

Khare, Sanjay V.

91

STUDY OF THE EFFECT OF ABSORBER ETCHING ON THE BACK CONTACT PERFORMANCE OF CDTE SOLAR CELLS  

E-Print Network [OSTI]

STUDY OF THE EFFECT OF ABSORBER ETCHING ON THE BACK CONTACT PERFORMANCE OF CDTE SOLAR CELLS Ivan that has shown a remarkable market success in thin film solar cells. It is well known that deposition and defects are addressed. 2 EXPERIMENTAL CdTe solar cells, in our laboratory, are usually prepared as follows

Romeo, Alessandro

92

Nanoassembly control and optical absorption in CdTe-ZnO nanocomposite thin films  

SciTech Connect (OSTI)

The spatial distribution of CdTe nanoparticles within a ZnO thin-film matrix was manipulated using a dual-source, sequential radio-frequency (RF)-sputter deposition technique to produce nanocomposite materials with tuned spectral absorption characteristics. The relative substrate exposure time to each sputtering source was used to control the semiconductor phase connectivity, both within the film plane and along the film growth direction, to influence the degree of photocarrier confinement and the resulting optical transition energies exhibited by the CdTe phase. Significant changes (up to {Delta}E {approx_equal} 0.3 eV) in the absorption onset energy for the CdTe nanoparticle ensemble were produced through modification in the extended structure of the semiconductor phase. Raman spectroscopy, cross-sectional transmission electron microscopy, and x-ray diffraction were used to confirm the phase identity of the CdTe and ZnO and to characterize the nanostructures produced in these composite films. Isochronal annealing for 5 min at temperatures up to 800 deg. C further indicated the potential to improve film crystallinity as well as to establish the post-deposition thermal processing limits of stability for the semiconductor phase. The study highlights the significance of ensemble behavior as a means to influence quantum-scale semiconductor optical characteristics of import to the use of such materials as the basis for a variety of optoelectronic devices, including photosensitized heterojunction components in thin film photovoltaics.

Potter, B. G. Jr. [Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85721 (United States); College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States); Beal, R. J.; Allen, C. G. [Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85721 (United States)

2012-02-01T23:59:59.000Z

93

Characterization of Field Exposed Thin Film Modules: Preprint  

SciTech Connect (OSTI)

Test arrays of thin film modules have been deployed at the Solar Energy Centre near New Delhi, India since 2002-2003. Performances of these arrays were reported by O.S. Sastry [1]. This paper reports on NREL efforts to support SEC by performing detailed characterization of selected modules from the array. Modules were selected to demonstrate both average and worst case power loss over the 8 years of outdoor exposure. The modules characterized included CdTe, CIS and three different types of a-Si. All but one of the a-Si types were glass-glass construction. None of the modules had edge seals. Detailed results of these tests are presented along with our conclusions about the causes of the power loss for each technology.

Wohlgemuth, J. H.; Sastry, O. S.; Stokes, A.; Singh, Y. K.; Kumar, M.

2012-06-01T23:59:59.000Z

94

Thin film buried anode battery  

DOE Patents [OSTI]

A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

Lee, Se-Hee (Lakewood, CO); Tracy, C. Edwin (Golden, CO); Liu, Ping (Denver, CO)

2009-12-15T23:59:59.000Z

95

Thin film solar energy collector  

DOE Patents [OSTI]

A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

Aykan, Kamran (Monmouth Beach, NJ); Farrauto, Robert J. (Westfield, NJ); Jefferson, Clinton F. (Millburn, NJ); Lanam, Richard D. (Westfield, NJ)

1983-11-22T23:59:59.000Z

96

Thin-film Lithium Batteries  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism in Layered NbS2 andThe1 MembersStability| EMSLforThin Thin-Film

97

Metastable Changes to the Temperature Coefficients of Thin-Film Photovoltaic Modules  

SciTech Connect (OSTI)

Transient changes in the performance of thin-film modules with light exposure are a well-known and widely reported phenomenon. These changes are often the result of reversible metastabilities rather than irreversible changes. Here we consider how these metastable changes affect the temperature dependence of photovoltaic performance. We find that in CIGS modules exhibiting a metastable increase in performance with light exposure, the light exposure also induces an increase in the magnitude of the temperature coefficient. It is important to understand such changes when characterizing temperature coefficients and when analyzing the outdoor performance of newly installed modules.

Deceglie, M. G.; Silverman, T. J.; Marion, B.; Kurtz, S. R.

2014-07-01T23:59:59.000Z

98

Thin films of mixed metal compounds  

DOE Patents [OSTI]

A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

1985-01-01T23:59:59.000Z

99

Direct Measurement of Oxygen Incorporation into Thin Film Oxides...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Measurement of Oxygen Incorporation into Thin Film Oxides at Room Temperature Upon Ultraviolet Phton Irradiation. Direct Measurement of Oxygen Incorporation into Thin Film Oxides...

100

BDS thin film damage competition  

SciTech Connect (OSTI)

A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

Stolz, C J; Thomas, M D; Griffin, A J

2008-10-24T23:59:59.000Z

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Predicted roles of defects on band offsets and energetics at CIGS (Cu(In,Ga)Se2/CdS) solar cell interfaces and implications for improving performance  

E-Print Network [OSTI]

, and in- deed the global operating capacity for solar photovoltaics is increasing steadily.1 CurrentlyPredicted roles of defects on band offsets and energetics at CIGS (Cu(In,Ga)Se2/CdS) solar cell ZnO sputtering on the performance of Cu(In,Ga)Se2 thin film solar cells Appl. Phys. Lett. 105, 083906

Goddard III, William A.

102

Novel wide band gap materials for highly efficient thin film tandem solar cells  

SciTech Connect (OSTI)

Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PV�s goal in Phase I of the DOE SBIR was to 1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and 2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin films using a mixture of solution and physical vapor deposition processing, but these films lacked the p-type doping levels that are required to make decent solar cells. Over the course of the project PLANT PV was able to fabricate efficient CIGS solar cells (8.7%) but could not achieve equivalent performance using AIGS. During the nine-month grant PLANT PV set up a variety of thin film characterization tools (e.g. drive-level capacitance profiling) at the Molecular Foundry, a Department of Energy User Facility, that are now available to both industrial and academic researchers via the grant process. PLANT PV was also able to develop the back end processing of thin film solar cells at Lawrence Berkeley National Labs to achieve 8.7% efficient CIGS solar cells. This processing development will be applied to other types of thin film PV cells at the Lawrence Berkeley National Labs. While PLANT PV was able to study AIGS film growth and optoelectronic properties we concluded that AIGS produced using these methods would have a limited efficiency and would not be commercially feasible. PLANT PV did not apply for the Phase II of this grant.

Brian E. Hardin, Stephen T. Connor, Craig H. Peters

2012-06-11T23:59:59.000Z

103

Visible spectrometer utilizing organic thin film absorption  

E-Print Network [OSTI]

In this thesis, I modeled and developed a spectrometer for the visible wavelength spectrum, based on absorption characteristics of organic thin films. The device uses fundamental principles of linear algebra to reconstruct ...

Tiefenbruck, Laura C. (Laura Christine)

2004-01-01T23:59:59.000Z

104

Solid State Thin Film Lithium Microbatteries  

E-Print Network [OSTI]

Solid state thin film lithium microbatteries fabricated by pulsed-laser deposition (PLD) are suggested. During deposition the following process parameters must be considered, which are laser energy and fluence, laser pulse ...

Shi, Z.

105

Joint Development of Coated Conductor and Low Cost Thin Film Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-007-213  

SciTech Connect (OSTI)

UES plans on developing CIGS thin films by using Metal Organic Deposition (MOD) technique as it is a low-cost, non-vacuum method for scale-up to large area PV modules. NREL will support UES, Inc. through expert processing, characterization and device fabrication. NREL scientists will also help develop a processing phase diagram which includes composition, film thickness, annealing temperature and ambient conditions. Routine measurements of devices and materials will be done under NREL's core support project.

Bhattacharya, R.

2011-02-01T23:59:59.000Z

106

Research on polycrystalline thin-film CuGaInSe{sub 2} solar cells. Annual subcontract report, 3 May 1991--2 May 1992  

SciTech Connect (OSTI)

This report describes research to fabricate high-efficiency CdZnS/CuInGaSe{sub 2} (CIGS) thin-film solar cells, and to develop improved transparent conductor window layers such as ZnO. A specific technical milestone was the demonstration of an air mass (AM) 1.5 global, 13% efficient, 1-cm{sup 2}-total-area CIGS thin-film solar cell. Our activities focused on three areas. First, a CIGS deposition: system was modified to double its substrate capacity, thus increasing throughput, which is critical to speeding the process development by providing multiple substrates from the same CIGS run. Second, new tooling was developed to enable an investigation of a modified aqueous CdZnS process. The goal was to improve the yield of this critical step in the device fabrication process. Third, our ZnO sputtering system was upgraded to improve its reliability, and the sputtering parameters were further optimized to improve its properties as a transparent conducting oxide. The characterization of the new CIGS deposition system substrate fixturing was completed, and we produced good thermal uniformity and adequately high temperatures for device-quality CIGS deposition. Both the CIGS and ZnO deposition processes were refined to yield a ZnO//Cd{sub 0.82}Zn{sub 0.18}S/CuIn{sub 0.80}Ga{sub 0.20}Se{sub 2} cell that was verified at NREL under standard testing conditions at 13.1% efficiency with V{sub oc} = 0.581 V, J{sub sc} = 34.8 mA/cm{sup 2}, FF = 0.728, and a cell area of 0.979 cm{sup 2}.

Stanbery, B.J.; Chen, W.S.; Devaney, W.E.; Stewart, J.W. [Boeing Co., Seattle, WA (United States). Defense and Space Systems Group

1992-11-01T23:59:59.000Z

107

Optical Constants ofOptical Constants of Uranium Nitride Thin FilmsUranium Nitride Thin Films  

E-Print Network [OSTI]

Optical Constants ofOptical Constants of Uranium Nitride Thin FilmsUranium Nitride Thin FilmsDelta--Beta Scatter Plot at 220 eVBeta Scatter Plot at 220 eV #12;Why Uranium Nitride?Why Uranium Nitride? UraniumUranium, uranium,Bombard target, uranium, with argon ionswith argon ions Uranium atoms leaveUranium atoms leave

Hart, Gus

108

Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films  

DOE Patents [OSTI]

A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

Brinker, Charles Jeffrey (Albuquerque, NM); Prakash, Sai Sivasankaran (Minneapolis, MN)

1999-01-01T23:59:59.000Z

109

Phase assembly and photo-induced current in CdTe-ZnO nanocomposite thin films  

SciTech Connect (OSTI)

Sequential radio-frequency sputtering was used to produce CdTe-ZnO nanocomposite thin films with varied semiconductor-phase extended structures. Control of the spatial distribution of CdTe nanoparticles within the ZnO embedding phase was used to influence the semiconductor phase connectivity, contributing to both changes in quantum confinement induced spectral absorption and carrier transport characteristics of the resulting nanocomposite. An increased number density of CdTe particles deposited along the applied field direction produced an enhancement in the photo-induced current observed. These results highlight the opportunity to employ long-range phase assembly as a means to control optoelectronic properties of significant interest for photovoltaic applications.

Beal, R. J.; Kana Kana, J. B. [Department of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85721 (United States); Potter, B. G. Jr. [Department of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85721 (United States); College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States)

2012-07-16T23:59:59.000Z

110

Thin film absorber for a solar collector  

DOE Patents [OSTI]

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Wilhelm, William G. (Cutchogue, NY)

1985-01-01T23:59:59.000Z

111

Thin film dielectric composite materials  

DOE Patents [OSTI]

A dielectric composite material comprising at least two crystal phases of different components with TiO.sub.2 as a first component and a material selected from the group consisting of Ba.sub.1-x Sr.sub.x TiO.sub.3 where x is from 0.3 to 0.7, Pb.sub.1-x Ca.sub.x TiO.sub.3 where x is from 0.4 to 0.7, Sr.sub.1-x Pb.sub.x TiO.sub.3 where x is from 0.2 to 0.4, Ba.sub.1-x Cd.sub.x TiO.sub.3 where x is from 0.02 to 0.1, BaTi.sub.1-x Zr.sub.x O.sub.3 where x is from 0.2 to 0.3, BaTi.sub.1-x Sn.sub.x O.sub.3 where x is from 0.15 to 0.3, BaTi.sub.1-x Hf.sub.x O.sub.3 where x is from 0.24 to 0.3, Pb.sub.1-1.3x La.sub.x TiO.sub.3+0.2x where x is from 0.23 to 0.3, (BaTiO.sub.3).sub.x (PbFeo.sub.0.5 Nb.sub.0.5 O.sub.3).sub.1-x where x is from 0.75 to 0.9, (PbTiO.sub.3).sub.- (PbCo.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.1 to 0.45, (PbTiO.sub.3).sub.x (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.2 to 0.4, and (PbTiO.sub.3).sub.x (PbFe.sub.0.5 Ta.sub.0.5 O.sub.3).sub.1-x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.

Jia, Quanxi (Los Alamos, NM); Gibbons, Brady J. (Los Alamos, NM); Findikoglu, Alp T. (Los Alamos, NM); Park, Bae Ho (Los Alamos, NM)

2002-01-01T23:59:59.000Z

112

Tungsten-doped thin film materials  

DOE Patents [OSTI]

A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

2003-12-09T23:59:59.000Z

113

Thin Film Transistors On Plastic Substrates  

DOE Patents [OSTI]

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

2004-01-20T23:59:59.000Z

114

Vibration welding system with thin film sensor  

DOE Patents [OSTI]

A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

2014-03-18T23:59:59.000Z

115

The interplay between spatially separated ferromagnetic and superconducting thin films  

E-Print Network [OSTI]

Ferromagnetic thin films have been grown via physical vapor deposition utilizing the technique of flash evaporation and characterized by measuring magnetization as a function of magnetic field. An Al thin film was evaporated atop the ferromagnetic...

Sullivan, Isaac John

2013-02-22T23:59:59.000Z

116

Guided Self-Assembly of Gold Thin Films  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Guided Self-Assembly of Gold Thin Films Guided Self-Assembly of Gold Thin Films Print Wednesday, 21 November 2012 12:18 Nanoparticles-man-made atoms with unique optical,...

117

Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown by Oxygen-plasma-assisted Molecular Beam Epitaxy. Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown by...

118

aluminium thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 21 Thin-Film Metamaterials called Sculptured Thin Films CERN Preprints Summary: Morphology...

119

Resource recovery from urban stock, the example of cadmium and tellurium from thin film module recycling  

SciTech Connect (OSTI)

Highlights: ? The semiconductor layer on thin-film photovoltaic modules can be removed from the glass-plate by vacuum blast cleaning. ? The separation of blasting agent and semiconductor can be performed using flotation with a valuable yield of 55%. ? PV modules are a promising source for the recovery of tellurium in the future. - Abstract: Raw material supply is essential for all industrial activities. The use of secondary raw material gains more importance since ore grade in primary production is decreasing. Meanwhile urban stock contains considerable amounts of various elements. Photovoltaic (PV) generating systems are part of the urban stock and recycling technologies for PV thin film modules with CdTe as semiconductor are needed because cadmium could cause hazardous environmental impact and tellurium is a scarce element where future supply might be constrained. The paper describes a sequence of mechanical processing techniques for end-of-life PV thin film modules consisting of sandblasting and flotation. Separation of the semiconductor material from the glass surface was possible, however, enrichment and yield of valuables in the flotation step were non-satisfying. Nevertheless, recovery of valuable metals from urban stock is a viable method for the extension of the availability of limited natural resources.

Simon, F.-G., E-mail: franz-georg.simon@bam.de [BAM Federal Institute for Materials Research and Testing, Division 4.3 Contaminant Transfer and Environmental Technologies, Unter den Eichen 87, 12205 Berlin (Germany); Holm, O.; Berger, W. [BAM Federal Institute for Materials Research and Testing, Division 4.3 Contaminant Transfer and Environmental Technologies, Unter den Eichen 87, 12205 Berlin (Germany)

2013-04-15T23:59:59.000Z

120

Identification and Analysis of Distinct Features in Imaging Thin-Film Solar Cells: Preprint  

SciTech Connect (OSTI)

Electroluminescence and photoluminescence (EL and PL) are two imaging techniques employed at NREL that are used to qualitatively evaluate solar cells. In this work, imaging lab-scale CdTe and CIGS devices provides information about small-area PV response, which will aid in determining the effects of non-uniformities on cell performance. EL, PL, and dark lock-in thermography signatures are first catalogued. Their responses to varying conditions are then studied. Further analysis includes acquiring spectral data, making microscopy measurements, and correlating luminescence to device performance. The goal of this work is to quantitatively determine non-uniformity effects on cell performance using rapid imaging techniques.

Zaunbrecher, K. N.; Johnston, S. W.; Sites, J. R.

2012-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Polycrystalline CdTe Solar Cells on Buffered Commercial TCO-Coated Glass with Efficiencies Above 15%  

SciTech Connect (OSTI)

EPIR Technologies, Inc. reports the production of thin film polycrystalline CdTe devices with National Renewable Energy Laboratory (NREL)-verified efficiencies above 15%. While previous reporting of high efficiency poly-CdTe solar cells utilized high-temperature technical glass, EPIR's cells were produced on commercially-available conductive glass. The devices exhibit fill factors up to 77% and short-circuit current densities around 24 mA/cm{sup 2}. EPIR developed a robust process for producing thin film CdTe solar cells through implementation of a high resistivity SnO{sub 2} buffer layer and optimization of the CdS window layer thickness. The effects of the high resistivity buffer layer on device performance were investigated, demonstrating improved overall performance and yield. To our knowledge, these are among the highest efficiencies yet reported and NREL-verified for a thin film CdTe solar cell fabricated using commercial conductive glass.

Banai, R.; Blissett, C.; Buurma, C.; Colegrove, E.; Bechmann, P.; Ellsworth, J.; Morley, M.; Barnes, S.; Lennon, C.; Gilmore, C.; Dhere, R.; Bergeson, J.; Scott, M.; Gessert, T.

2011-01-01T23:59:59.000Z

122

SINGLE AND DUAL LAYER THIN FILM BULGE TESTING  

E-Print Network [OSTI]

film windows that are used in Next Generation Lithography masks and certain MEMS devices. The bulge testing method measures the mechanical properties of a thin film by isolating it in a thin film window of the system. Figure 6 Dual Layer Thin Film Membrane Window For a dual layer membrane the effective total

Huston, Dryver R.

123

THIN FILM MECHANICS BULGING AND Ph.D Dissertation  

E-Print Network [OSTI]

for the intensive effort in research in materials and processing techniques. Thin film windows are window underneath. The thin film window has such a small thickness to span ratio that it can usually be considered and precision-stretching of thin film windows are examined. Bulge Testing is a method used to evaluate

Huston, Dryver R.

124

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES  

E-Print Network [OSTI]

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES S. Suresh1 , T.-G. Nieh2 and B.W. Choi2: Mechanical properties; Nano-indentation; Thin films; Copper; Dislocations Introduction Indentation methods films on substrates (e.g., [2,3]) using instrumented indentation. Nano-indentation studies of thin films

Suresh, Subra

125

Enhanced Thin Film Organic Photovoltaic Devices  

Energy Innovation Portal (Marketing Summaries) [EERE]

A novel structure design for thin film organic photovoltaic (OPV) devices provides a system for increasing the optical absorption in the active layer. The waveguided structure permits reduction of the active layer thickness, resulting in enhanced charge collection and extraction, leading to improved power conversion efficiency compared to standard OPV devices....

2014-01-10T23:59:59.000Z

126

CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and Accomplishments  

Office of Scientific and Technical Information (OSTI)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinan antagonist Journal Article: Crystal structureComposite-- Energy, science, and technology - C L A

127

NREL: Awards and Honors - Lightweight, Flexible, Thin-Film CIGS PV Modules  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the Contributions and Achievements of Women |hits 21Species.4ElectroexplodedLightweight,

128

Polycrystalline thin films FY 1992 project report  

SciTech Connect (OSTI)

This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting ``next-generation`` options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called ``government/industry partnerships``) that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

Zweibel, K. [ed.

1993-01-01T23:59:59.000Z

129

Electrostatic thin film chemical and biological sensor  

DOE Patents [OSTI]

A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

Prelas, Mark A. (Columbia, MO); Ghosh, Tushar K. (Columbia, MO); Tompson, Jr., Robert V. (Columbia, MO); Viswanath, Dabir (Columbia, MO); Loyalka, Sudarshan K. (Columbia, MO)

2010-01-19T23:59:59.000Z

130

Thin film photovoltaic panel and method  

DOE Patents [OSTI]

A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

Ackerman, Bruce (El Paso, TX); Albright, Scot P. (El Paso, TX); Jordan, John F. (El Paso, TX)

1991-06-11T23:59:59.000Z

131

Packaging material for thin film lithium batteries  

DOE Patents [OSTI]

A thin film battery including components which are capable of reacting upon exposure to air and water vapor incorporates a packaging system which provides a barrier against the penetration of air and water vapor. The packaging system includes a protective sheath overlying and coating the battery components and can be comprised of an overlayer including metal, ceramic, a ceramic-metal combination, a parylene-metal combination, a parylene-ceramic combination or a parylene-metal-ceramic combination.

Bates, John B. (116 Baltimore Dr., Oak Ridge, TN 37830); Dudney, Nancy J. (11634 S. Monticello Rd., Knoxville, TN 37922); Weatherspoon, Kim A. (223 Wadsworth Pl., Oak Ridge, TN 37830)

1996-01-01T23:59:59.000Z

132

Annealed CVD molybdenum thin film surface  

DOE Patents [OSTI]

Molybdenum thin films deposited by pyrolytic decomposition of Mo(CO).sub.6 attain, after anneal in a reducing atmosphere at temperatures greater than 700.degree. C., infrared reflectance values greater than reflectance of supersmooth bulk molybdenum. Black molybdenum films deposited under oxidizing conditions and annealed, when covered with an anti-reflecting coating, approach the ideal solar collector characteristic of visible light absorber and infrared energy reflector.

Carver, Gary E. (Tucson, AZ); Seraphin, Bernhard O. (Tucson, AZ)

1984-01-01T23:59:59.000Z

133

Flexible Ultra Moisture Barrier Film for Thin-Film Photovoltaic Applications  

SciTech Connect (OSTI)

Flexible Thin-film photovoltaic (TFPV) is a low cost alternative to incumbent c-Si PV products as it requires less volume of costly semiconductor materials and it can potentially reduce installation cost. Among the TFPV options, copper indium gallium diselenide (CIGS) has the highest efficiency and is believed to be one of the most attractive candidates to achieve PV cost reduction. However, CIGS cells are very moisture sensitive and require module water vapor transmission rate (WVTR) of less than 1x10-4 gram of water per square meter per day (g-H2O/m2/day). Successful development and commercialization of flexible transparent ultra moisture barrier film is the key to enable flexible CIGS TFPV products, and thus enable ultimate PV cost reduction. At DuPont, we have demonstrated at lab scale that we can successfully make polymer-based flexible transparent ultra moisture barrier film by depositing alumina on polymer films using atomic layer deposition (ALD) technology. The layer by layer ALD approach results in uniform and amorphous structure which effectively reduces pinhole density of the inorganic coating on the polymer, and thus allow the fabrication of flexible barrier film with WVTR of 10-5 g-H2O/m2/day. Currently ALD is a time-consuming process suitable only for high-value, relatively small substrates. To successfully commercialize the ALD-on-plastic technology for the PV industry, there is the need to scale up this technology and improve throughput. The goal of this contract work was to build a prototype demonstrating that the ALD technology could be scaled-up for commercial use. Unfortunately, the prototype failed to produce an ultra-barrier film by the close of the project.

David M. Dean

2012-10-30T23:59:59.000Z

134

Determination of Grain Boundary Charging in Cu(In,Ga)Se2 Thin Films: Preprint  

SciTech Connect (OSTI)

Surface potential mapping of Cu(In,Ga)Se2 (CIGS) thin films using scanning Kelvin probe force microscopy (SKPFM) aims to understand the minority-carrier recombination at the grain boundaries (GBs) of this polycrystalline material by examining GB charging, which has resulted in a number of publications. However, the reported results are highly inconsistent. In this paper, we report on the potential mapping by measuring wide-bandgap or high-Ga-content films and by using a complementary atomic force microscopy-based electrical technique of scanning capacitance microscopy (SCM). The results demonstrate consistent, positively charged GBs on our high-quality films with minimal surface defects/charges. The potential image taken on a low-quality film with a 1.2-eV bandgap shows significantly degraded potential contrast on the GBs and degraded potential uniformity on grain surfaces, resulting from the surface defects/charges of the low-quality film. In contrast, the potential image on an improved high-quality film with the same wide bandgap shows significantly improved GB potential contrast and surface potential uniformity, indicating that the effect of surface defects is critical when examining GB charging using surface potential data. In addition, we discuss the effect of the SKPFM setup on the validity of potential measurement, to exclude possible artifacts due to improper SKPFM setups. The SKPFM results were corroborated by using SCM measurements on the films with a CdS buffer layer. The SCM image shows clear GB contrast, indicating different electrical impedance on the GB from the grain surface. Further, we found that the GB contrast disappeared when the CdS window layer was deposited after the CIGS film was exposed extensively to ambient, which was caused by the creation of CIGS surface defects by the ambient exposure.

Jiang, C. S.; Contreras, M. A.; Repins, I.; Moutinho, H. R.; Noufi, R.; Al-Jassim, M. M.

2012-06-01T23:59:59.000Z

135

Rechargeable thin film battery and method for making the same  

DOE Patents [OSTI]

A rechargeable, stackable, thin film, solid-state lithium electrochemical cell, thin film lithium battery and method for making the same is disclosed. The cell and battery provide for a variety configurations, voltage and current capacities. An innovative low temperature ion beam assisted deposition method for fabricating thin film, solid-state anodes, cathodes and electrolytes is disclosed wherein a source of energetic ions and evaporants combine to form thin film cell components having preferred crystallinity, structure and orientation. The disclosed batteries are particularly useful as power sources for portable electronic devices and electric vehicle applications where high energy density, high reversible charge capacity, high discharge current and long battery lifetimes are required.

Goldner, Ronald B.; Liu, Te-Yang; Goldner, Mark A.; Gerouki, Alexandra; Haas, Terry E.

2006-01-03T23:59:59.000Z

136

Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization  

E-Print Network [OSTI]

Research, Thin-Film Photovoltaic (PV) Cells Market Analysiscost of photovoltaic systems (such as solar cells) due tosolar cells are created by depositing layers of photovoltaic

Bielecki, Anthony

2013-01-01T23:59:59.000Z

137

Institute of Photo Electronic Thin Film Devices and Technology...  

Open Energy Info (EERE)

Technology of Nankai University Place: Tianjin Municipality, China Zip: 300071 Sector: Solar Product: A thin-film solar cell research institute in China. References: Institute...

138

applications thin film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Nikolay 27 Solvent-enhanced dye diffusion in polymer thin films for polymer light-emitting diode application Engineering Websites Summary: Solvent-enhanced dye diffusion in...

139

Low-Cost Light Weigh Thin Film Solar Concentrators  

Broader source: Energy.gov (indexed) [DOE]

Light Weight Thin Film Solar Concentrators PI: Gani B. Ganapathi (JPLCaltech) Other Contributors: L'Garde: Art Palisoc, Gyula Greschik, Koorosh Gidanian JPL: Bill Nesmith,...

140

antibacterial thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Skovlin, Dean Oliver 2012-06-07 138 Uncooled Thin Film Pyroelectric IR Detector with Aerogel Thermal Isolation CiteSeer Summary: Uncooled pyroelectric IR imaging systems, such...

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

acid thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

142

almgb14 thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

143

aggase2 thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

144

ablation thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

145

aln thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

deposited by the reactive dc magnetron sputtering technique at room, amorphous and polycrystalline GaN thin films have been deposited using the magnetron sputtering...

146

anatase thin film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

147

area thin film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

148

aluminide thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

149

antiferroelectric thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

150

ain thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

151

advanced thin film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

152

arsenide thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

153

Uncooled thin film pyroelectric IR detector with aerogel thermal isolation  

SciTech Connect (OSTI)

A monolithic infrared detector structure which allows integration of pyroelectric thin films atop low thermal conductivity aerogel thin films. The structure comprises, from bottom to top, a substrate, an aerogel insulating layer, a lower electrode, a pyroelectric layer, and an upper electrode layer capped by a blacking layer. The aerogel can offer thermal conductivity less than that of air, while providing a much stronger monolithic alternative to cantilevered or suspended air-gap structures for pyroelectric thin film pixel arrays. Pb(Zr.sub.0.4 Ti.sub.0.6)O.sub.3 thin films deposited on these structures displayed viable pyroelectric properties, while processed at 550.degree. C.

Ruffner, Judith A. (Albuquerque, NM); Bullington, Jeff A. (Albuquerque, NM); Clem, Paul G. (Albuquerque, NM); Warren, William L. (Albuquerque, NM); Brinker, C. Jeffrey (Albuquerque, NM); Tuttle, Bruce A. (Albuquerque, NM); Schwartz, Robert W. (Seneca, SC)

1999-01-01T23:59:59.000Z

154

Thickness Dependency of Thin Film Samaria Doped Ceria for Oxygen...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

High temperature oxygen sensors are widely used for exhaust gas monitoring in automobiles. This particular study explores the use of thin film single crystalline samaria...

155

Thin film photovoltaic device with multilayer substrate  

DOE Patents [OSTI]

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

Catalano, Anthony W. (Rushland, PA); Bhushan, Manjul (Wilmington, DE)

1984-01-01T23:59:59.000Z

156

Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics  

E-Print Network [OSTI]

nanowire networks as window layers in thin film solar cells.window layer for fully solution-deposited thin filmITO) thin films by silver nanowire composite window layers

Chung, Choong-Heui

2012-01-01T23:59:59.000Z

157

Synthesis and application perspective of advanced plasma polymerized organic thin films  

E-Print Network [OSTI]

Synthesis and application perspective of advanced plasma polymerized organic thin films I.-S. Bae a November 2005 Abstract Plasma polymerized cyclohexane and ethylcyclohexane organic thin films were rights reserved. Keywords: Plasma polymerization; Ethylcyclohexane and cyclohexane organic thin films

Boo, Jin-Hyo

158

Apparatus for laser assisted thin film deposition  

DOE Patents [OSTI]

A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus. 9 figs.

Warner, B.E.; McLean, W. II

1996-02-13T23:59:59.000Z

159

Apparatus for laser assisted thin film deposition  

DOE Patents [OSTI]

A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus.

Warner, Bruce E. (Pleasanton, CA); McLean, II, William (Oakland, CA)

1996-01-01T23:59:59.000Z

160

Rechargeable thin-film lithium batteries  

SciTech Connect (OSTI)

Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. These include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4} cells with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The realization of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46}and a conductivity at 25 C of 2 {mu}S/cm. The thin-film cells have been cycled at 100% depth of discharge using current densities of 5 to 100 {mu}A/cm{sup 2}. Over most of the charge-discharge range, the internal resistance appears to be dominated by the cathode, and the major source of the resistance is the diffusion of Li{sup +} ions from the electrolyte into the cathode. Chemical diffusion coefficients were determined from ac impedance measurements.

Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

1993-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

STRESSES AND FAILURE MODES IN THIN FILMS AND MULTILAYERS  

E-Print Network [OSTI]

Stressesin a Thin Film 4 2.3 Stresses in a Multilayer: Layer by Layer Deposition and Release from of the Interface a Bilayer under Residual Stress 30 5.2 Delamination of a Bilayer by Layer Cracking Parallel FOR THIN FILMS UNDER RESIDUAL COMPRESSION 36 6.1 Straight-sided Blisters 36 6.2 Circular Blisters 40 6

Hutchinson, John W.

162

CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS  

E-Print Network [OSTI]

CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS by David T. Oliphant. Woolley Dean, College of Physical and Mathematical Sciences #12;ABSTRACT CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS David T. Oliphant Department of Physics and Astronomy

Hart, Gus

163

Avalanches through windows: Multiscale visualization in magnetic thin films  

E-Print Network [OSTI]

Avalanches through windows: Multiscale visualization in magnetic thin films Alessandro Magni, Cornell University, Ithaca, NY 14853-2501 Abstract--The dynamics of domain walls motion in thin films dynamics, but are strongly dependent on the size of the windows chosen. Here we investigate how to properly

Sethna, James P.

164

Fracture patterns in thin films and multilayers Alex A. Volinsky  

E-Print Network [OSTI]

Fracture patterns in thin films and multilayers Alex A. Volinsky University of South Florida, excessive residual and externally applied stresses cause film fracture. In the case of tensile stress is the key for causing thin film fracture, either in tension, or compression, it is the influence

Volinsky, Alex A.

165

APPLIED PHYSICS REVIEWS Erbium implanted thin film photonic materials  

E-Print Network [OSTI]

, phosphosilicate, borosilicate, and soda-lime glasses , ceramic thin films Al2O3, Y2O3, LiNbO3 , and amorphous. Phosphosilicate glass. . . . . . . . . . . . . . . . . . . . . . 7 C. Soda-lime silicate glass Er-doped thin film photonic materials is described. It focuses on oxide glasses pure SiO2

Polman, Albert

166

A survey of thin-film solar photovoltaic industry & technologies  

E-Print Network [OSTI]

A new type of solar cell technology using so-called thin-film solar photovoltaic material has the potential to make a great impact on our lives. Because it uses very little or no silicon at all, thin- film (TF) solar ...

Grama, Sorin

2007-01-01T23:59:59.000Z

167

Wave propagation in highly inhomogeneous thin films: exactly solvable models  

E-Print Network [OSTI]

Wave propagation in highly inhomogeneous thin films: exactly solvable models Guillaume Petite(1 of wave propagation in some inhomogeneous thin films with highly space- dependent dielectric constant will show that depending on the type of space dependence, an incident wave can either propagate or tunnel

Boyer, Edmond

168

E-Print Network 3.0 - alumina thin films Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

constant in RF devices. Some unique features of thin-film silica and alumina aerogels have been... aerogel thin films, silica and alumina aerogel cantilevers were...

169

Zn3P2 and Cu2O substrates for solar energy conversion.  

E-Print Network [OSTI]

??Zinc phosphide (Zn3P2) and cuprous oxide (Cu2O) are promising and earth-abundant alternatives to traditional thin film photovoltaics materials such as CIGS, CdTe, and a-Si. We… (more)

Kimball, Gregory Michael

2012-01-01T23:59:59.000Z

170

Electrical Bias as an Alternate Method for Reproducible Measurement of Copper Indium Gallium Diselenide (CIGS) Photovoltaic Modules: Preprint  

SciTech Connect (OSTI)

Light-to-dark metastable changes in thin-film photovoltaic (PV) modules can introduce uncertainty when measuring module performance on indoor flash testing equipment. This study describes a method to stabilize module performance through forward-bias current injection rather than light exposure. Measurements of five pairs of thin-film copper indium gallium diselenide (CIGS) PV modules indicate that forward-bias exposure maintained the PV modules at a stable condition (within 1%) while the unbiased modules degraded in performance by up to 12%. It was additionally found that modules exposed to forward bias exhibited stable performance within about 3% of their long-term outdoor exposed performance. This carrier-injection method provides a way to reduce uncertainty arising from fast transients in thin-film module performance between the time a module is removed from light exposure and when it is measured indoors, effectively simulating continuous light exposure by injecting minority carriers that behave much as photocarriers do. This investigation also provides insight into the initial light-induced transients of thin-film modules upon outdoor deployment.

Deline, C.; Stokes, A.; Silverman, T. J.; Rummel, S.; Jordan, D.; Kurtz, S.

2012-08-01T23:59:59.000Z

171

Sandia National Laboratories: thin-film growth  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1developmentturbineredox-activeNational SolartSSLPV materials (Si CIGS CdTe)growth

172

Sandia National Laboratories: thin-film technology  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1developmentturbineredox-activeNational SolartSSLPV materials (Si CIGS

173

Glow discharge plasma deposition of thin films  

DOE Patents [OSTI]

A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.

Weakliem, Herbert A. (Pennington, NJ); Vossen, Jr., John L. (Bridgewater, NJ)

1984-05-29T23:59:59.000Z

174

Rechargeable thin-film electrochemical generator  

DOE Patents [OSTI]

An improved electrochemical generator is disclosed. The electrochemical generator includes a thin-film electrochemical cell which is maintained in a state of compression through use of an internal or an external pressure apparatus. A thermal conductor, which is connected to at least one of the positive or negative contacts of the cell, conducts current into and out of the cell and also conducts thermal energy between the cell and thermally conductive, electrically resistive material disposed on a vessel wall adjacent the conductor. The thermally conductive, electrically resistive material may include an anodized coating or a thin sheet of a plastic, mineral-based material or conductive polymer material. The thermal conductor is fabricated to include a resilient portion which expands and contracts to maintain mechanical contact between the cell and the thermally conductive material in the presence of relative movement between the cell and the wall structure. The electrochemical generator may be disposed in a hermetically sealed housing.

Rouillard, Roger (Beloeil, CA); Domroese, Michael K. (South St. Paul, MN); Hoffman, Joseph A. (Minneapolis, MN); Lindeman, David D. (Hudson, WI); Noel, Joseph-Robert-Gaetan (St-Hubert, CA); Radewald, Vern E. (Austin, TX); Ranger, Michel (Lachine, CA); Sudano, Anthony (Laval, CA); Trice, Jennifer L. (Eagan, MN); Turgeon, Thomas A. (Fridley, MN)

2000-09-15T23:59:59.000Z

175

Thin films of mixed metal compounds  

DOE Patents [OSTI]

Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

Mickelsen, R.A.; Chen, W.S.

1985-06-11T23:59:59.000Z

176

Thin Film Femtosecond Laser Damage Competition  

SciTech Connect (OSTI)

In order to determine the current status of thin film laser resistance within the private, academic, and government sectors, a damage competition was started at the 2008 Boulder Damage Symposium. This damage competition allows a direct comparison of the current state of the art of high laser resistance coatings since they are tested using the same damage test setup and the same protocol. In 2009 a high reflector coating was selected at a wavelength of 786 nm at normal incidence at a pulse length of 180 femtoseconds. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials and layer count, and spectral results will also be shared.

Stolz, C J; Ristau, D; Turowski, M; Blaschke, H

2009-11-14T23:59:59.000Z

177

Processing and modeling issues for thin-film solar cell devices. Annual subcontract report, January 16, 1994--January 15, 1995  

SciTech Connect (OSTI)

This report describes results achieved during the second phase of a four year subcontract to develop and understand thin film solar cell technology related to a-Si and its alloys, CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2}, and CdTe. Accomplishments during this phase include, development of equations and reaction rates for the formation of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} films by selenization, fabrication of a 15% efficient CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} cell, development of a reproducible, reliable Cu-diffused contact to CdTe, investigation of the role of CdTe-CdS interdiffusion on device operation, investigation of the substitution of HCl for CdCl{sub 2} in the post-deposition heat treatment of CdTe/CdS, demonstration of an improved reactor design for deposition of a-Si films, demonstration of improved process control in the fabrication of a ten set series of runs producing {approximately}8% efficient a-Si devices, demonstration of the utility of a simplified optical model for determining quantity and effect of current generation in each layer of a triple stacked a-Si cell, presentation of analytical and modeling procedures adapted to devices produced with each material system, presentation of baseline parameters for devices produced with each material system, and various investigations of the roles played by other layers in thin film devices including the Mo underlayer, CdS and ZnO in CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} devices, the CdS in CdTe devices, and the ZnO as window layer and as part of the back surface reflector in a-Si devices. In addition, collaborations with over ten research groups are briefly described. 73 refs., 54 figs., 34 tabs.

Birkmire, R.W.; Phillips, J.E.; Buchanan, W.A.; Hegedus, S.S.; McCandless, B.E.; Shafarman, W.N. [Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion

1995-06-01T23:59:59.000Z

178

Atomic-force microscopy and photoluminescence of nanostructured CdTe  

SciTech Connect (OSTI)

Low-dimensional CdTe nanorods with a diameter of 10-30 nm and a high aspect ratio that reaches 100 are studied. The nanorods are grown by the physical vapor transport method with the use of Bi precipitates on the substrates. In addition, thin films of closely packed CdTe nanorods with the transverse dimensions {approx}(100-200) nm are grown. Atomic-force microscopy shows that the cross sections of all of the nanorods were hexagonally shaped. By photoluminescence measurements, the inference about the wurtzite structure of CdTe is supported, and the structural quality, electron-phonon coupling, and defects are analyzed. On the basis of recent ab initio calculations, the nature of defects responsible for the formation of deep levels in the CdTe layers and bulk crystals are analyzed.

Babentsov, V.; Sizov, F. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)] [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine); Franc, J. [Charles University, Institute of Physics, Faculty of Mathematics and Physics (Czech Republic)] [Charles University, Institute of Physics, Faculty of Mathematics and Physics (Czech Republic); Luchenko, A.; Svezhentsova, E., E-mail: svezhentsova@ukr.net; Tsybrii, Z. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)] [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)

2013-09-15T23:59:59.000Z

179

Effect of Cu doping on Hole Mobility in CdTe  

SciTech Connect (OSTI)

High quality CdTe thin films grown by laser deposition technique and heavily doped with Cu have recently been reported to have resistivity and hole mobility comparable to those of bulk single crystals. To explain the experimental results we have calculated the effect of Cu on the band structure and phonon spectrum of CdTe using the density functional theory (DFT) and the linearized augmented plane wave (LAPW) method. We found that the introduction of a high density of Cu can lead to a reduction in the hole-LO phonon scattering. In addition, Cu doping can remove Cd vacancies in CdTe and thereby enhance the hole mobility in CdTe.

Ma Zhixun; Mao, Samuel S. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Liu Lei; Yu, Peter Y. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Department of Physics, University of California at Berkeley, Berkeley, CA 94720 (United States)

2010-01-04T23:59:59.000Z

180

Focused ion beam specimen preparation for electron holography of electrically biased thin film solar cells  

E-Print Network [OSTI]

, biased TEM specimen, thin film solar cell, FIB Thin films of hydrogenated Si (Si:H) can be used as active for electron holography of a thin film solar cell using conventional lift-out specimen preparation and a homeFocused ion beam specimen preparation for electron holography of electrically biased thin film

Dunin-Borkowski, Rafal E.

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

182

Bulge testing of single and dual layer thin films Dryver R. Huston*ab  

E-Print Network [OSTI]

to a thin film window. By comparing the pressure- displacement relation with a mechanical model, the elastic structures, such as the thin film windows that are used in Next Generation Lithography masks and certain MEMS it in a thin film window. Thin film windows are fabricated by removing the thick substrate out from underneath

Huston, Dryver R.

183

Antimony-Doped Tin(II) Sulfide Thin Films  

E-Print Network [OSTI]

Thin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin ...

Chakraborty, Rupak

184

A Review of Thin Film Silicon for Solar Cell Applications  

E-Print Network [OSTI]

A Review of Thin Film Silicon for Solar Cell Applications May 99 Contents 1 Introduction 3 2 Low 2.2.3 Deposition onto foreign substrates with the intention of improving crystallographic nature Field Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 11

185

Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)  

SciTech Connect (OSTI)

Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for Polycrystalline Thin-Film Research: Cadmium Telluride at the National Center for Photovoltaics.

Not Available

2011-06-01T23:59:59.000Z

186

Structural, magnetic, and optical properties of orthoferrite thin films  

E-Print Network [OSTI]

Pulsed laser deposition was used to create thin films of Ce-Fe-O and Y-Fe-O systems. Deposition temperature and ambient oxygen pressure were varied systematically between samples to determine which deposition conditions ...

Supplee, William Wagner

2007-01-01T23:59:59.000Z

187

Modeling of thin-film solar thermoelectric generators  

E-Print Network [OSTI]

Recent advances in solar thermoelectric generator (STEG) performance have raised their prospect as a potential technology to convert solar energy into electricity. This paper presents an analysis of thin-film STEGs. ...

Weinstein, Lee Adragon

188

Fluorination of amorphous thin-film materials with xenon fluoride  

DOE Patents [OSTI]

A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

Weil, R.B.

1987-05-01T23:59:59.000Z

189

Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)  

SciTech Connect (OSTI)

This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

Not Available

2013-06-01T23:59:59.000Z

190

Multimonth controlled small molecule release from biodegradable thin films  

E-Print Network [OSTI]

Long-term, localized delivery of small molecules from a biodegradable thin film is challenging owing to their low molecular weight and poor charge density. Accomplishing highly extended controlled release can facilitate ...

Hammond, Paula T.

191

amorphous thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Amorphous Silicon Thin-Film Transistor Pixel.S.A. 1 LG Philips LCD Research and Development Center, An-Yang, 431-080, Korea (Received July 23, 2006; accepted October 31, 2006;...

192

amorphous thin film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Amorphous Silicon Thin-Film Transistor Pixel.S.A. 1 LG Philips LCD Research and Development Center, An-Yang, 431-080, Korea (Received July 23, 2006; accepted October 31, 2006;...

193

Initiated chemical vapor deposition of functional polyacrylic thin films  

E-Print Network [OSTI]

Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<200?C) ...

Mao, Yu, 1975-

2005-01-01T23:59:59.000Z

194

al thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

dalek@eee.hku.hk , C. Y. Kwong, T. W. Lau, L. S. M. Lam, and W. K 276 DEFECT-FREE THIN FILM MEMBRANES FOR H2 SEPARATION AND ISOLATION Energy Storage, Conversion and...

195

al thin film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

dalek@eee.hku.hk , C. Y. Kwong, T. W. Lau, L. S. M. Lam, and W. K 276 DEFECT-FREE THIN FILM MEMBRANES FOR H2 SEPARATION AND ISOLATION Energy Storage, Conversion and...

196

Monolithic integration of thin-film coolers with optoelectronic devices  

E-Print Network [OSTI]

Monolithic integration of thin-film coolers with optoelectronic devices Christopher La Barbara, California 93106-9560 Abstract. Active refrigeration of optoelectronic components through the use manuscript received June 30, 2000; accepted for publication June 30, 2000. 1 Introduction Optoelectronic

197

Role of Microstructural Phenomena in Magnetic Thin Films. Final Report  

SciTech Connect (OSTI)

Over the period of the program we systematically varied microstructural features of magnetic thin films in an attempt to better identify the role which each feature plays in determining selected extrinsic magnetic properties. This report summarizes the results.

Laughlin, D. E.; Lambeth, D. N.

2001-04-30T23:59:59.000Z

198

Self-Assembling Process for Fabricating Tailored Thin Films  

ScienceCinema (OSTI)

A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

Sandia

2009-09-01T23:59:59.000Z

199

Self-Assembling Process for Fabricating Tailored Thin Films  

ScienceCinema (OSTI)

A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

None

2010-01-08T23:59:59.000Z

200

Orientational Analysis of Molecules in Thin Films | Stanford...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Orientational Analysis of Molecules in Thin Films Monday, September 17, 2012 - 10:00am SSRL Bldg. 137, room 226 Daniel Kaefer The synchrotron-based X-ray absorption spectroscopy is...

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

National High Magnetic Field Laboratory: Magnetic Thin Films  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

recorded work with magnetic thin films took place in the 1880s and was carried out by German physicist August Kundt. Well known for his research on sound and optics, Kundts...

202

Enabling integration of vapor-deposited polymer thin films  

E-Print Network [OSTI]

Initiated Chemical Vapor Deposition (iCVD) is a versatile, one-step process for synthesizing conformal and functional polymer thin films on a variety of substrates. This thesis emphasizes the development of tools to further ...

Petruczok, Christy D. (Christy Danielle)

2014-01-01T23:59:59.000Z

203

Method for making surfactant-templated thin films  

DOE Patents [OSTI]

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (New Orleans, LA); Fan, Hong You (Albuquerque, NM)

2010-08-31T23:59:59.000Z

204

Method for making surfactant-templated thin films  

DOE Patents [OSTI]

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (San Jose, CA); Fan, Hongyou (Albuquerque, NM)

2002-01-01T23:59:59.000Z

205

Efficient light trapping structure in thin film silicon solar cells  

E-Print Network [OSTI]

Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

Sheng, Xing

206

Laser Induced Breakdown Spectroscopy and Applications Toward Thin Film Analysis  

E-Print Network [OSTI]

on the surface. Ultrafast laser pulses are shorter than thethe advantages of ultrafast laser pulses for thin film LIBS,each time. While ultrafast laser pulses are effective in

Owens, Travis Nathan

2011-01-01T23:59:59.000Z

207

Nanostructured thin films for solid oxide fuel cells  

E-Print Network [OSTI]

The goals of this work were to synthesize high performance perovskite based thin film solid oxide fuel cell (TF-SOFC) cathodes by pulsed laser deposition (PLD), to study the structural, electrical and electrochemical properties of these cathodes...

Yoon, Jongsik

2009-05-15T23:59:59.000Z

208

ag thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

MgO, Ref. 21 Marcon, Marco 2 Multi-level surface enhanced Raman scattering using AgOx thin film Physics Websites Summary: by applying laser-direct writing (LDW) technique on...

209

Properties and sensor performance of zinc oxide thin films  

E-Print Network [OSTI]

Reactively sputtered ZnO thin film gas sensors were fabricated onto Si wafers. The atmosphere dependent electrical response of the ZnO micro arrays was examined. The effects of processing conditions on the properties and ...

Min, Yongki, 1965-

2003-01-01T23:59:59.000Z

210

Functionalized multilayer thin films for protection against acutely toxic agents  

E-Print Network [OSTI]

The recently developed practice of spraying polyelectrolyte solutions onto a substrate in order to construct thin films via the Layer-by-Layer (LbL) technique has been further investigated and extended. In this process a ...

Krogman, Kevin Christopher

2009-01-01T23:59:59.000Z

211

Direct printing of lead zirconate titanate thin films  

E-Print Network [OSTI]

Thus far, use of lead zirconate titanate (PZT) in MEMS has been limited due to the lack of process compatibility with existing MEMS manufacturing techniques. Direct printing of thin films eliminates the need for photolithographic ...

Bathurst, Stephen, 1980-

2008-01-01T23:59:59.000Z

212

Spray Deposition of High Quality CuInSe2 and CdTe Films: Preprint  

SciTech Connect (OSTI)

A number of different ink and deposition approaches have been used for the deposition of CuInSe2 (CIS), Cu(In,Ga)Se2 (CIGS), and CdTe films. For CIS and CIGS, soluble precursors containing Cu, In, and Ga have been developed and used in two ways to produce CIS films. In the first, In-containing precursor films were sprayed on Mo-coated glass substrates and converted by rapid thermal processing (RTP) to In2Se3. Then a Cu-containing film was sprayed down on top of the In2Se3 and the stacked films were again thermally processed to give CIS. In the second approach, the Cu-, In-, and Ga-containing inks were combined in the proper ratio to produce a mixed Cu-In-Ga ink that was sprayed on substrates and thermally processed to give CIGS films directly. For CdTe deposition, ink consisting of CdTe nanoparticles dispersed in methanol was prepared and used to spray precursor films. Annealing these precursor films in the presence of CdCl2 produced large-grained CdTe films. The films were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). Optimized spray and processing conditions are crucial to obtain dense, crystalline films.

Curtis, C. J.; van Hest, M.; Miedaner, A.; Leisch, J.; Hersh, P.; Nekuda, J.; Ginley, D. S.

2008-05-01T23:59:59.000Z

213

Recent technological advances in thin film solar cells  

SciTech Connect (OSTI)

High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

Ullal, H.S.; Zwelbel, K.; Surek, T.

1990-03-01T23:59:59.000Z

214

Nonlinear viscoelastic characterization of thin films using dynamic mechanical analysis  

E-Print Network [OSTI]

NONLINEAR VISCOELASTIC CHARACTERIZATION OF THIN FILMS USING DYNAMIC MECHANICAL ANALYSIS A Thesis by DEBBIE FLOWERS PAYNE Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment of the requirements... for the degree of MASTER OF SCIENCE AUGUST 1993 Major Subject: Aerospace Engineering NONLINEAR VISCOELASTIC CHARACTERIZATION OF THIN FILMS USING DYNAMIC MECHANICAL ANALYSIS A Thesis by DEBBIE FLOWERS PAYNE Approved as to style and content by: Thomas W...

Payne, Debbie Flowers

1993-01-01T23:59:59.000Z

215

Picoseconds-Laser Modification of Thin Films  

SciTech Connect (OSTI)

The interaction of a Nd:YAG laser, pulse duration of 40 ps, with a titanium nitride (TiN) and tungsten-titanium (W-Ti) thin films deposited at silicon was studied. The peak intensity on targets was up to 1012 W/cm2. Results have shown that the TiN surface was modified, by the laser beam, with energy density of {>=}0.18 J/cm2 ({lambda}laser= 532 nm) as well as of 30.0 J/cm2 ({lambda}laser= 1064 nm). The W-Ti was surface modified with energy density of 5.0 J/cm2 ({lambda}laser= 532 nm). The energy absorbed from the Nd:YAG laser beam is partially converted to thermal energy, which generates a series of effects such as melting, vaporization of molten materials, dissociation and ionization of the vaporized material, appearance of plasma, etc. The following morphological changes of both targets were observed: (i) The appearance of periodic microstructures, in the central zone of the irradiated area, for laser irradiation at 532 nm. Accumulation of great number of laser pulses caused film ablation and silicon modification. (ii) Hole formation on the titanium nitride/silicon target was registered at 1064 nm. The process of the Nd:YAG laser interaction with both targets was accompanied by plasma formation above the target.

Gakovic, Biljana; Trtica, Milan [Institute of Nuclear Sciences 'VINCA' 522, 11001 Belgrade (Serbia and Montenegro); Batani, Dimitri; Desai, Tara; Redaelli, Renato [Dipartimento di Fisica 'G. Occhialini', Universita' degli Studi Milano-Bicocca, Piazza della Scienza 3, Milan 20126 (Italy)

2006-04-07T23:59:59.000Z

216

Controlled nanostructuration of polycrystalline tungsten thin films  

SciTech Connect (OSTI)

Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

Girault, B. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Institut de Recherche en Genie Civil et Mecanique (UMR CNRS 6183), LUNAM Universite, Universite de Nantes, Centrale Nantes, CRTT, 37 Bd de l'Universite, BP 406, 44602 Saint-Nazaire Cedex (France); Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Sauvage, T. [CEMHTI/CNRS (UPR 3079 CNRS), Universite d'Orleans, 3A rue de la Ferollerie, 45071 Orleans Cedex 2 (France)

2013-05-07T23:59:59.000Z

217

Electrochromism in copper oxide thin films  

SciTech Connect (OSTI)

Transparent thin films of copper(I) oxide prepared on conductive SnO2:F glass substrates by anodic oxidation of sputtered copper films or by direct electrodeposition of Cu2O transformed reversibly to opaque metallic copper films when reduced in alkaline electrolyte. In addition, the same Cu2O films transform reversibly to black copper(II) oxide when cycled at more anodic potentials. Copper oxide-to-copper switching covered a large dynamic range, from 85% and 10% photopic transmittance, with a coloration efficiency of about 32 cm2/C. Gradual deterioration of the switching range occurred over 20 to 100 cycles. This is tentatively ascribed to coarsening of the film and contact degradation caused by the 65% volume change on conversion of Cu to Cu2O. Switching between the two copper oxides (which have similar volumes) was more stable and more efficient (CE = 60 cm2/C), but covered a smaller transmittance range (60% to 44% T). Due to their large electrochemical storage capacity and tolerance for alkaline electrolytes, these cathodically coloring films may be useful as counter electrodes for anodically coloring electrode films such as nickel oxide or metal hydrides.

Richardson, T.J.; Slack, J.L.; Rubin, M.D.

2000-08-15T23:59:59.000Z

218

Adhesion and Thin-Film Module Reliability  

SciTech Connect (OSTI)

Among the infrequently measured but essential properties for thin-film (T-F) module reliability are the interlayer adhesion and cohesion within a layer. These can be cell contact layers to glass, contact layers to the semiconductor, encapsulant to cell, glass, or backsheet, etc. We use an Instron mechanical testing unit to measure peel strengths at 90deg or 180deg and, in some cases, a scratch and tape pull test to evaluate inter-cell layer adhesion strengths. We present peel strength data for test specimens laminated from the three T-F technologies, before and after damp heat, and in one instance at elevated temperatures. On laminated T-F cell samples, failure can occur uniformly at any one of the many interfaces, or non-uniformly across the peel area at more than one interface. Some peel strengths are Lt1 N/mm. This is far below the normal ethylene vinyl acetate/glass interface values of >10 N/mm. We measure a wide range of adhesion strengths and suggest that adhesion measured under higher temperature and relative humidity conditions is more relevant for module reliability.

McMahon, T. J.; Jorgenson, G. J.

2006-01-01T23:59:59.000Z

219

Josephson junction in a thin film  

SciTech Connect (OSTI)

The phase difference {phi}(y) for a vortex at a line Josephson junction in a thin film attenuates at large distances as a power law, unlike the case of a bulk junction where it approaches exponentially the constant values at infinities. The field of a Josephson vortex is a superposition of fields of standard Pearl vortices distributed along the junction with the line density {phi}'(y)/2{pi}. We study the integral equation for {phi}(y) and show that the phase is sensitive to the ratio l/{Lambda}, where l={lambda}{sub J}{sup 2}/{lambda}{sub L}, {Lambda}=2{lambda}{sub L}{sup 2}/d, {lambda}{sub L}, and {lambda}{sub J} are the London and Josephson penetration depths, and d is the film thickness. For l<<{Lambda}, the vortex ''core'' of the size l is nearly temperature independent, while the phase ''tail'' scales as l{Lambda}/y{sup 2}={lambda}{sub J}2{lambda}{sub L}/d/y{sup 2}; i.e., it diverges as T{yields}T{sub c}. For l>>{Lambda}, both the core and the tail have nearly the same characteristic length l{Lambda}.

Kogan, V. G.; Dobrovitski, V. V.; Clem, J. R.; Mawatari, Yasunori; Mints, R. G.

2001-04-01T23:59:59.000Z

220

Nitrogen doped zinc oxide thin film  

SciTech Connect (OSTI)

To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO{sub 2} plasma or by N{sup +} implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zn{sub i}, a native shallow donor. In NO{sub 2}-grown ZnO films, the n-type conductivity is attributed to (N{sub 2}){sub O}, a shallow double donor. In NO{sub 2}-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N{sub 2}O and N{sub 2}. Upon annealing, N{sub 2}O decomposes into N{sub 2} and O{sub 2}. In furnace-annealed samples N{sub 2} redistributes diffusively and forms gaseous N{sub 2} bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N{sup +} implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N{sub 2}){sub O} and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

Li, Sonny X.

2003-12-15T23:59:59.000Z

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Thin Film Packaging Solutions for High Efficiency OLED Lighting Products  

SciTech Connect (OSTI)

The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology was characterized as having less than 10% change in transmission during the 15,000 hour test period; (3) demonstrated thin film encapsulation of a phosphorescent OLED device with 1,500 hours of lifetime at 60 C and 80% RH; (4) demonstrated that a thin film laminate encapsulation, in addition to the direct thin film deposition process, of a polymer OLED device was another feasible packaging strategy for OLED lighting. The thin film laminate strategy was developed to mitigate defects, demonstrate roll-to-roll process capability for high volume throughput (reduce costs) and to support a potential commercial pathway that is less dependent upon integrated manufacturing since the laminate could be sold as a rolled good; (5) demonstrated that low cost 'blue' glass substrates could be coated with a siloxane barrier layer for planarization and ion-protection and used in the fabrication of a polymer OLED lighting device. This study further demonstrated that the substrate cost has potential for huge cost reductions from the white borosilicate glass substrate currently used by the OLED lighting industry; (6) delivered four-square feet of white phosphorescent OLED technology, including novel high efficiency devices with 82 CRI, greater than 50 lm/W efficiency, and more than 1,000 hours lifetime in a product concept model shelf; (7) presented and or published more than twenty internal studies (for private use), three external presentations (OLED workshop-for public use), and five technology-related external presentations (industry conferences-for public use); and (8) issued five patent applications, which are in various maturity stages at time of publication. Delivery of thin film encapsulated white phosphorescent OLED lighting technology remains a challenging technical achievement, and it seems that commercial availability of thin, bright, white OLED light that meets market requirements will continue to require research and development effort. However, there will be glass encapsulated white OLED lighting products commercialized in niche markets during the 2008 calendar year. This commercializ

None

2008-06-30T23:59:59.000Z

222

Uncooled thin film pyroelectric IR detector with aerogel thermal isolation  

SciTech Connect (OSTI)

Uncooled pyroelectric IR imaging systems, such as night vision goggles, offer important strategic advantages in battlefield scenarios and reconnaissance surveys. Until now, the current technology for fabricating these devices has been limited by low throughput and high cost which ultimately limit the availability of these sensor devices. We have developed and fabricated an alternative design for pyroelectric IR imaging sensors that utilizes a multilayered thin film deposition scheme to create a monolithic thin film imaging element on an active silicon substrate for the first time. This approach combines a thin film pyroelectric imaging element with a thermally insulating SiO{sub 2} aerogel thin film to produce a new type of uncooled IR sensor that offers significantly higher thermal, spatial, and temporal resolutions at a substantially lower cost per unit. This report describes the deposition, characterization and optimization of the aerogel thermal isolation layer and an appropriate pyroelectric imaging element. It also describes the overall integration of these components along with the appropriate planarization, etch stop, adhesion, electrode, and blacking agent thin film layers into a monolithic structure. 19 refs., 8 figs., 6 tabs.

Ruffner, J.A.; Clem, P.G.; Tuttle, B.A. [and others

1998-01-01T23:59:59.000Z

223

High-efficiency, thin-film cadmium telluride photovoltaic cells. Annual subcontract report, 20 January 1994--19 January 1995  

SciTech Connect (OSTI)

This report describes work performed to develop and optimize the process of radio frequency (RF) sputtering for the fabrication of thin-film solar cells on glass. The emphasis is on CdTe-related materials including CdTe, CdS, ZnTe, and ternary alloy semiconductors. Pulsed laser physical vapor deposition (LPVD) was used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. For the sputtering work, a two-gun sputtering chamber was implemented, with optical access for monitoring temperature and growth rate. We studied the optical and electrical properties of the plasmas produced by two different kinds of planar magnetron sputter guns with different magnetic field configurations and strengths. Using LPVD, we studied alloy semiconductors such as CdZnTe and heavily doped semiconductors such as ZnTe:Cu for possible incorporation into graded band gap CdTe-based photovoltaic devices.

Compaan, A.D.; Bohn, R.G.; Rajakarunanayake, Y. [Toledo Univ., OH (United States)

1995-08-01T23:59:59.000Z

224

High-efficiency thin-film cadmium telluride photovoltaic cells. Annual technical report, January 20, 1996--January 19, 1997  

SciTech Connect (OSTI)

The University of Toledo photovoltaics group has been instrumental in developing rf sputtering for CDs/CdTe thin-film solar cells. During the third phase of the present contract our work focussed on efforts to determine factors which limit the efficiency in our {open_quotes}all-sputtered{close_quotes} thin-film CdTe solar cells on soda-lime glass. We find that our all-sputtered cells, which are deposited at substantially lower temperature than those by sublimation or vapor deposition, require less aggressive CdCl{sub 2} treatments than do other deposition techniques and this is presumably related to CDs/CdTe interdiffusion. The CDs/CdTe interdiffusion process has been studied by several methods, including photoluminescence and capacitance-voltage measurements. Furthermore, we have deposited special thin bilayer films on quartz and borosilicate glass. Interdiffusion in these thin bilayers have been probed by Rutherford backscattering, with collaborators at Case Western Reserve University, and grazing incidence x-ray scattering (GIXS), with collaborators at the University at Buffalo and Brookhaven National Lab. Also, in order better to understand the properties of the ternary alloy material, we used laser physical vapor deposition to prepare a series of CdS{sub x}Te{sub 1-x} films on borosilicate glass. The composition of the alloy films was determined by wavelength dispersive x-ray spectroscopy at NREL. These films are currently being investigated by us and other groups at NREL and IEC.

Compaan, A.D.; Bohn, R.G.; Contreras-Puente, G. [Univ. of Toledo, OH (United States)] [Univ. of Toledo, OH (United States)

1997-08-01T23:59:59.000Z

225

Properties of zirconia thin films deposited by laser ablation  

SciTech Connect (OSTI)

Zirconia thin films have been deposited by laser ablation of a ceramic ZrO{sub 2} target in vacuum or in oxygen background at 0.01 mbar. The laser beam generated by an ArF laser (?=193 nm, ?=40 Hz) has been focalized on the target through a spherical lens at an incident angle of 45°. The laser fluence has been established to a value from 2.0 to 3.4 Jcm{sup ?2}. A silicon (100) substrate has been placed parallel to the target, at a distance of 4 cm, and subsequently has been heated to temperatures ranging between 300 °C and 600 °C. Thin films morphology has been characterized by atomic force microscopy and secondary ion mass spectrometry. Biocompatibility of these thin films has been assessed by studying the cell attachment of L929 mouse fibroblasts.

Cancea, V. N. [Department of Physics, University of Craiova, Craiova 200585 (Romania); Filipescu, M.; Colceag, D.; Dinescu, M. [Department of Lasers, National Institute for Laser, Plasma and Radiation Physics, Magurele 077125 (Romania); Mustaciosu, C. [Horia Hulubei National Institute of Physics and Nuclear Engineering, Magurele, Bucharest (Romania)

2013-11-13T23:59:59.000Z

226

Shape variation of micelles in polymer thin films  

SciTech Connect (OSTI)

The equilibrium properties of block copolymer micelles confined in polymer thin films are investigated using self-consistent field theory. The theory is based on a model system consisting of AB diblock copolymers and A homopolymers. Two different methods, based on the radius of gyration tensor and the spherical harmonics expansion, are used to characterize the micellar shape. The results reveal that the morphology of micelles in thin films depends on the thickness of the thin films and the selectivity of the confining surfaces. For spherical (cylindrical) micelles, the spherical (cylindrical) symmetry is broken by the presence of the one-dimensional confinement, whereas the top-down symmetry is broken by the selectivity of the confining surfaces. Morphological transitions from spherical or cylindrical micelles to cylinders or lamella are predicted when the film thickness approaches the micellar size.

Zhou, Jiajia, E-mail: zhou@uni-mainz.de; Shi, An-Chang, E-mail: shi@mcmaste.ca [Department of Physics and Astronomy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)] [Department of Physics and Astronomy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)

2014-01-14T23:59:59.000Z

227

Method of improving field emission characteristics of diamond thin films  

DOE Patents [OSTI]

A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

Krauss, Alan R. (Naperville, IL); Gruen, Dieter M. (Downer Grove, IL)

1999-01-01T23:59:59.000Z

228

Mode Splitting for Efficient Plasmoinc Thin-film Solar Cell  

E-Print Network [OSTI]

We propose an efficient plasmonic structure consisting of metal strips and thin-film silicon for solar energy absorption. We numerically demonstrate the absorption enhancement in symmetrical structure based on the mode coupling between the localized plasmonic mode in Ag strip pair and the excited waveguide mode in silicon slab. Then we explore the method of symmetry-breaking to excite the dark modes that can further enhance the absorption ability. We compare our structure with bare thin-film Si solar cell, and results show that the integrated quantum efficiency is improved by nearly 90% in such thin geometry. It is a promising way for the solar cell.

Li, Tong; Jiang, Chun

2010-01-01T23:59:59.000Z

229

Method of improving field emission characteristics of diamond thin films  

DOE Patents [OSTI]

A method of preparing diamond thin films with improved field emission properties is disclosed. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display. 3 figs.

Krauss, A.R.; Gruen, D.M.

1999-05-11T23:59:59.000Z

230

A comparison of thick film and thin film traffic stripes  

E-Print Network [OSTI]

Striys. . . Pigmented Bitusmn Stripes . Asphalt %uilt-Upa Striye vith Pigmented Portland Cement Mortar Cover Course 38 . ~ 41 Thin Film Stripes Used for Comparison Results of Comparing Thick Film Stripes and Thin Film Paint Stripes . ~ ~ ~ ~ ~ 43... was aspbaltio oonorets. The pavement in Test Areas 2y 3p and 4 vas portland cesmnh ooncrete, Two test areas (3 and 4) vere located in such manner as to provide uninterrupted flow of traffic over tbs entire length of the test area. The other two test areas (1...

Keese, Charles J

1952-01-01T23:59:59.000Z

231

Fabrication of polycrystalline thin films by pulsed laser processing  

DOE Patents [OSTI]

A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

1998-02-03T23:59:59.000Z

232

Fabrication of polycrystalline thin films by pulsed laser processing  

DOE Patents [OSTI]

A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

Mitlitsky, Fred (Livermore, CA); Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Colella, Nicholas J. (Livermore, CA)

1998-02-03T23:59:59.000Z

233

Study of Martensitic Phase transformation in a NiTiCu Thin Film...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Phase transformation in a NiTiCu Thin Film Shape Memory Alloy Using Photoelectron Emission Microscopy. Study of Martensitic Phase transformation in a NiTiCu Thin Film Shape...

234

Tax Credits Give Thin-Film Solar a Big Boost | Department of...  

Broader source: Energy.gov (indexed) [DOE]

Thin-Film Solar a Big Boost October 18, 2010 - 2:00pm Addthis MiaSol will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery...

235

The development of a thin-film rollforming process for pharmaceutical continuous manufacturing  

E-Print Network [OSTI]

In this thesis, a continuous rollforming process for the folding of thin-films was proposed and studied as a key step in the continuous manufacturing of pharmaceutical tablets. HPMC and PEG based polymeric thin-films were ...

Slaughter, Ryan (Ryan R.)

2013-01-01T23:59:59.000Z

236

PID Failure of c-Si and Thin-Film Modules and Possible Correlation...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

PID Failure of c-Si and Thin-Film Modules and Possible Correlation with Leakage Currents PID Failure of c-Si and Thin-Film Modules and Possible Correlation with Leakage Currents...

237

Epoxy/Single Walled Carbon Nanotube Nanocomposite Thin Films for Composites Reinforcement  

E-Print Network [OSTI]

This work is mainly focused upon the preparation, processing and evaluation of mechanical and material properties of epoxy/single walled carbon nanotube (SWCNT) nanocomposite thin films. B-staged epoxy/SWCNT nanocomposite thin films at 50% of cure...

Warren, Graham

2010-07-14T23:59:59.000Z

238

Characterization of LiNi?.?Mn?.?O? Thin Film Cathode Prepared by Pulsed Laser Deposition  

E-Print Network [OSTI]

LiNi?.?Mn?.?O? thin films have been grown by pulsed laser deposition (PLD) on stainless steel (SS) substrates. The crystallinity and structure of thin films were investigated by X-ray diffraction (XRD). Microstructure and ...

Xia, Hui

239

High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing  

E-Print Network [OSTI]

One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

240

Adsorption of iso-/n-butane on an Anatase Thin Film: A Molecular...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

iso-n-butane on an Anatase Thin Film: A Molecular Beam Scattering and TDS Study. Adsorption of iso-n-butane on an Anatase Thin Film: A Molecular Beam Scattering and TDS Study....

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Influence of samaria doping on the resistance of ceria thin films...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

doping on the resistance of ceria thin films and its implications to the planar oxygen sensing devices. Influence of samaria doping on the resistance of ceria thin films and...

242

Generation of low work function, stable compound thin films by laser ablation  

DOE Patents [OSTI]

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

2001-01-01T23:59:59.000Z

243

Carrier Dynamics in a-Fe2O3 (0001) Thin Films and Single Crystals...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Carrier Dynamics in a-Fe2O3 (0001) Thin Films and Single Crystals Probed by Femtosecond Transient Absorption and Reflectivity. Carrier Dynamics in a-Fe2O3 (0001) Thin Films and...

244

Two-color Laser Desorption of Nanostructured MgO Thin Films....  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Two-color Laser Desorption of Nanostructured MgO Thin Films. Two-color Laser Desorption of Nanostructured MgO Thin Films. Abstract: Neutral magnesium atom emission from...

245

Initiated chemical vapor deposition of polymeric thin films : mechanism and applications  

E-Print Network [OSTI]

Initiated chemical vapor deposition (iCVD) is a novel technique for depositing polymeric thin films. It is able to deposit thin films of application-specific polymers in one step without using any solvents. Its uniqueness ...

Chan, Kelvin, Ph. D. Massachusetts Institute of Technology

2005-01-01T23:59:59.000Z

246

Iron Oxide-Gold Core-Shell Nanoparticles and Thin-Film Assembly...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Oxide-Gold Core-Shell Nanoparticles and Thin-Film Assembly. Iron Oxide-Gold Core-Shell Nanoparticles and Thin-Film Assembly. Abstract: This paper reports findings of an...

247

Enhanced quantum efficiency of amorphous silicon thin film solar cells with the inclusion of a rear-reflector thin film  

SciTech Connect (OSTI)

We investigated the growth mechanism of amorphous silicon thin films by implementing hot-wire chemical vapor deposition and fabricated thin film solar cell devices. The fabricated cells showed efficiencies of 7.5 and 8.6% for the samples without and with the rear-reflector decomposed by sputtering, respectively. The rear-reflector enhances the quantum efficiency in the infrared spectral region from 550 to 750?nm. The more stable quantum efficiency of the sample with the inclusion of a rear-reflector than the sample without the rear-reflector due to the bias effect is related to the enhancement of the short circuit current.

Park, Seungil [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Yong Ji, Hyung; Jun Kim, Myeong; Hyeon Peck, Jong [Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Kim, Keunjoo, E-mail: kimk@chonbuk.ac.kr [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

2014-02-17T23:59:59.000Z

248

Barium ferrite thin film media with perpendicular c-axis orientation and small grain size  

E-Print Network [OSTI]

Barium ferrite thin film media with perpendicular c-axis orientation and small grain size Zailong, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 Barium ferrite thin films with perpendicular c conditions. The c-axis orientation of barium ferrite thin films is most sensitive to the oxygen partial

Laughlin, David E.

249

An integrated thin-film thermo-optic waveguide beam deflector Suning Tang,a)  

E-Print Network [OSTI]

An integrated thin-film thermo-optic waveguide beam deflector Suning Tang,a) Bulang Li, and Xinghua for publication 16 February 2000 We have demonstrated the operation of a thin-film thermo-optical beam deflector in a three-layer optical planar waveguide. The fabricated waveguide beam deflector consists of a thin-film Si

Chen, Ray

250

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b  

E-Print Network [OSTI]

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b , Ounsi of an absorbing planar photonic crystal within a thin film photovoltaic cell. The devices are based on a stack with large areas. Keywords: Photonic crystal, Photovoltaic solar cell, Thin film solar cell, Hydrogenated

Paris-Sud XI, Université de

251

Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova*  

E-Print Network [OSTI]

1 Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova* , I be minimized throughout the fabrication process. Amorphous silicon thin-film transistors and solar cells, thin-film transistor, solar cell, flexible electronics Phone: (609) 258-4626, Fax: (609) 258-3585, E

252

EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS  

E-Print Network [OSTI]

EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS Yun Seog Lee 1; * Corresponding author: buonassisi@mit.edu; ABSTRACT We investigate earth abundant materials for thin- film solar cuprous oxide (Cu2O) as a prototype candidate for investigation as an absorber layer in thin film solar

Ceder, Gerbrand

253

LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle  

E-Print Network [OSTI]

LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle Physics response map, was developed and used to map defects in thin-film solar cells [4]. Improvements to the two) measurements are providing a direct link between the spatial non-uniformities inherent in thin-film

Sites, James R.

254

Femtosecond laser ablation of indium tin-oxide narrow grooves for thin film solar cells  

E-Print Network [OSTI]

Femtosecond laser ablation of indium tin-oxide narrow grooves for thin film solar cells Qiumei Bian in the fabrication and assembly of thin film solar cells. Using a femtosecond (fs) laser, we selectively removed a unique scheme to ablate the indium tin-oxide layer for the fabrication of thin film solar cells

Van Stryland, Eric

255

Plasmonic enhancement of thin-film solar cells using gold-black C.J. Fredricksena  

E-Print Network [OSTI]

Plasmonic enhancement of thin-film solar cells using gold-black coatings C.J. Fredricksena , D. R thin-film amorphous-silicon solar cells enhance the short-circuit current by 20% over a broad spectrum and locally enhance the field strength. Keywords: plasmonics, thin-film, solar cell, metallic nanoparticles

Peale, Robert E.

256

Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell  

E-Print Network [OSTI]

Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell-wave approach was used to compute the plane-wave absorptance of a thin-film tandem solar cell with a metallic­4]. In this context, a basic idea is to periodically texture the metallic back reflector of a thin-film solar cell

257

DETERMINING OPTICAL CONSTANTS OF URANIUM NITRIDE THIN FILMS IN THE EXTREME  

E-Print Network [OSTI]

DETERMINING OPTICAL CONSTANTS OF URANIUM NITRIDE THIN FILMS IN THE EXTREME ULTRAVIOLET (1.6-35 NM deposition and characterization of reactively-sputtered uranium nitride thin films. I also report optical.1 Application 1 1.2 Optical Constants 2 1.3 Project Focus 7 2 Uranium Nitride Thin Films 8 2.1 Sputtering 8 2

Hart, Gus

258

Josephson junction in a thin film V. G. Kogan, V. V. Dobrovitski, and J. R. Clem  

E-Print Network [OSTI]

Josephson junction in a thin film V. G. Kogan, V. V. Dobrovitski, and J. R. Clem Ames Laboratory The phase difference (y) for a vortex at a line Josephson junction in a thin film attenuates at large was normal to the film faces unlike traditional thin-film large- area Josephson junctions in which

Mints, Roman G.

259

Metal-black scattering centers to enhance light harvesting by thin-film solar cells  

E-Print Network [OSTI]

Metal-black scattering centers to enhance light harvesting by thin-film solar cells Deep Panjwania as scattering centers to increase the effective optical thickness of thin-film solar cells. The particular type. Gold-black was deposited on commercial thin-film solar cells using a thermal evaporator in nitrogen

Peale, Robert E.

260

Microwave plasma assisted supersonic gas jet deposition of thin film materials  

DOE Patents [OSTI]

An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

Schmitt, III, Jerome J. (New Haven, CT); Halpern, Bret L. (Bethany, CT)

1993-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Black Silicon Enhanced Thin Film Silicon Photovoltaic Devices  

SciTech Connect (OSTI)

SiOnyx has developed an enhanced thin film silicon photovoltaic device with improved efficiency. Thin film silicon solar cells suffer from low material absorption characteristics resulting in poor cell efficiencies. SiOnyx’s approach leverages Black Silicon, an advanced material fabricated using ultrafast lasers. The laser treated films show dramatic enhancement in optical absorption with measured values in excess of 90% in the visible spectrum and well over 50% in the near infrared spectrum. Thin film Black Silicon solar cells demonstrate 25% higher current generation with almost no impact on open circuit voltage as compared with representative control samples. The initial prototypes demonstrated an improvement of nearly 2 percentage points in the suns Voc efficiency measurement. In addition we validated the capability to scale this processing technology to the throughputs (< 5 min/m2) required for volume production using state of the art commercially available high power industrial lasers. With these results we clearly demonstrate feasibility for the enhancement of thin film solar cells with this laser processing technique.

Martin U. Pralle; James E. Carey

2010-07-31T23:59:59.000Z

262

Stress and Moisture Effects on Thin Film Buckling Delamination  

E-Print Network [OSTI]

­2 GPa compres- sive residual stresses were sputter deposited on top of thin (below 100 nm) copper superlayer with com- pressive residual stress was sputter deposited on top of the films in order to help Mechanics 2006 Abstract Deposition processes control the properties of thin films; they can also introduce

Volinsky, Alex A.

263

Thin film cracking and ratcheting caused by temperature cycling  

E-Print Network [OSTI]

Thin film cracking and ratcheting caused by temperature cycling M. Huang and Z. Suo Mechanical caused by ratcheting in an adjacent ductile layer. For example, on a silicon die directly attached corners. Aided by cycling temperature, the shear stresses cause ratcheting in the aluminum pads

Suo, Zhigang

264

Perovskite phase thin films and method of making  

DOE Patents [OSTI]

The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.

Boyle, Timothy J. (Albuquerque, NM); Rodriguez, Mark A. (Albuquerque, NM)

2000-01-01T23:59:59.000Z

265

Quasi-Reversible Oxygen Exchange of Amorphous IGZO Thin Films  

E-Print Network [OSTI]

MRSEC Quasi-Reversible Oxygen Exchange of Amorphous IGZO Thin Films NSF Grant # 1121262 A. U. Adler of varying oxygen partial pressure. Oxygen exchange was confirmed by 18O tracer diffusion (time of carrier content vs. pO2) analysis should be applicable for studying the underlying carrier generation

Shahriar, Selim

266

Critical fields in ferromagnetic thin films: Identification of four regimes  

E-Print Network [OSTI]

Critical fields in ferromagnetic thin films: Identification of four regimes Rub´en Cantero­film elements is a paradigm for a multi­scale pattern­forming system. On one hand, there is a material length functional ceases to be positive definite. The degenerate subspace consists of the "unstable modes

Otto, Felix

267

Method of preparing thin film polymeric gel electrolytes  

DOE Patents [OSTI]

Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

Derzon, Dora K. (Albuquerque, NM); Arnold, Jr., Charles (Albuquerque, NM)

1997-01-01T23:59:59.000Z

268

Preparation and characterization of TL-based superconducting thin films  

E-Print Network [OSTI]

A simple method for growth of Tl-based superconducting thin films is described. In this method, the precursor was prepared in a vacuum chamber by deposition of Ba, Ca and Cu metals or a Ba-Ca alloy and Cu metal. The precursor was then oxidized...

Wang, Pingshu

1995-01-01T23:59:59.000Z

269

Method of preparing thin film polymeric gel electrolytes  

DOE Patents [OSTI]

Novel hybrid thin film electrolyte is described, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities {approx_equal}10{sup {minus}3}{Omega}{sup {minus}1}cm{sup {minus}1} are useful as electrolytes for rechargeable lithium batteries. 1 fig.

Derzon, D.K.; Arnold, C. Jr.

1997-11-25T23:59:59.000Z

270

Method for double-sided processing of thin film transistors  

DOE Patents [OSTI]

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Yuan, Hao-Chih (Madison, WI); Wang, Guogong (Madison, WI); Eriksson, Mark A. (Madison, WI); Evans, Paul G. (Madison, WI); Lagally, Max G. (Madison, WI); Ma, Zhenqiang (Middleton, WI)

2008-04-08T23:59:59.000Z

271

Front and backside processed thin film electronic devices  

DOE Patents [OSTI]

This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Evans, Paul G. (Madison, WI); Lagally, Max G. (Madison, WI); Ma, Zhenqiang (Middleton, WI); Yuan, Hao-Chih (Lakewood, CO); Wang, Guogong (Madison, WI); Eriksson, Mark A. (Madison, WI)

2012-01-03T23:59:59.000Z

272

Front and backside processed thin film electronic devices  

DOE Patents [OSTI]

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Yuan, Hao-Chih (Madison, WI); Wang, Guogong (Madison, WI); Eriksson, Mark A. (Madison, WI); Evans, Paul G. (Madison, WI); Lagally, Max G. (Madison, WI); Ma, Zhenqiang (Middleton, WI)

2010-10-12T23:59:59.000Z

273

Chemical analysis of thin films at Sandia National Laboratories  

SciTech Connect (OSTI)

The characterization of thin films produced by chemical and physical vapor deposition requires special analytical techniques. When the average compositions of the films are required, dissolution of the thin films and measurement of the concentrations of the solubilized species is the appropriate analytical approach. In this report techniques for the wet chemical analysis of thin films of Si:Al, P/sub 2/O/sub 5/:SiO/sub 2/, B/sub 2/O/sub 3/:SiO/sub 2/, TiB/sub x/ and TaB/sub x/ are described. The analyses are complicated by the small total quantities of these analytes present in the films, the refractory characters of these analytes, and the possibility of interferences from the substrates on which the films are deposited. Etching conditions are described which dissolve the thin films without introducing interferences from the substrates. A chemical amplification technique and inductively coupled plasma atomic emission spectrometry are shown to provide the sensitivity required to measure the small total quantities (micrograms to milligrams) of analytes present. Also the chemical analysis data has been used to calibrate normal infrared absorption spectroscopy to give fast estimates of the phosphorus and/or boron dopant levels in thin SiO/sub 2/ films.

Tallant, D.R.; Taylor, E.L.

1980-05-01T23:59:59.000Z

274

Micromachined thin-film gas flow sensor for microchemical reactors  

E-Print Network [OSTI]

Micromachined thin-film gas flow sensor for microchemical reactors W C Shin and R S Besser New applications not practical before such as highly compact, non-invasive pressure sensors, accelerometers and gas power consumption, fast response, and low-cost batch production [1-4]. Spurred by the development

Besser, Ronald S.

275

Thin Films and the Systems-Driven Approach  

SciTech Connect (OSTI)

A systems-driven approach is used to discern tradeoffs between cost and efficiency improvements for various thin-film module technologies and designs. Prospects for reduced system cost via such strategies are enhanced as balance-of-systems costs decline, and some strategies are identified for greater research focus.

Zweibel, K.

2005-01-01T23:59:59.000Z

276

Long-wave models of thin film fluid dynamics  

E-Print Network [OSTI]

Centre manifold techniques are used to derive rationally a description of the dynamics of thin films of fluid. The derived model is based on the free-surface $\\eta(x,t)$ and the vertically averaged horizontal velocity $\\avu(x,t)$. The approach appears to converge well and has significant differences from conventional depth-averaged models.

A. J. Roberts

1994-11-04T23:59:59.000Z

277

Thin film battery and method for making same  

DOE Patents [OSTI]

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

Bates, John B. (Oak Ridge, TN); Dudney, Nancy J. (Knoxville, TN); Gruzalski, Greg R. (Oak Ridge, TN); Luck, Christopher F. (Knoxville, TN)

1994-01-01T23:59:59.000Z

278

Thin film photovoltaic device and process of manufacture  

DOE Patents [OSTI]

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

1999-02-09T23:59:59.000Z

279

Thin film photovoltaic device and process of manufacture  

DOE Patents [OSTI]

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

1997-10-07T23:59:59.000Z

280

Thin film photovoltaic device and process of manufacture  

DOE Patents [OSTI]

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Albright, S.P.; Chamberlin, R.

1997-10-07T23:59:59.000Z

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Thin film photovoltaic device and process of manufacture  

DOE Patents [OSTI]

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Albright, S.P.; Chamberlin, R.

1999-02-09T23:59:59.000Z

282

Method for formation of thin film transistors on plastic substrates  

DOE Patents [OSTI]

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

1998-10-06T23:59:59.000Z

283

Method for formation of thin film transistors on plastic substrates  

DOE Patents [OSTI]

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

1998-10-06T23:59:59.000Z

284

Thin film battery and method for making same  

DOE Patents [OSTI]

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode. Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between [minus]15 C and 150 C. 9 figs.

Bates, J.B.; Dudney, N.J.; Gruzalski, G.R.; Luck, C.F.

1994-08-16T23:59:59.000Z

285

TI--CR--AL--O thin film resistors  

DOE Patents [OSTI]

Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

Jankowski, Alan F. (Livermore, CA); Schmid, Anthony P. (Solana Beach, CA)

2000-01-01T23:59:59.000Z

286

Strain mapping on gold thin film buckling and siliconblistering  

SciTech Connect (OSTI)

Stress/Strain fields associated with thin film buckling induced by compressive stresses or blistering due to the presence of gas bubbles underneath single crystal surfaces are difficult to measure owing to the microscale dimensions of these structures. In this work, we show that micro Scanning X-ray diffraction is a well suited technique for mapping the strain/stress tensor of these damaged structures.

Goudeau, P.; Tamura, N.; Parry, G.; Colin, J.; Coupeau, C.; Cleymand, F.; Padmore, H.

2005-09-01T23:59:59.000Z

287

Preparation of redox polymer cathodes for thin film rechargeable batteries  

DOE Patents [OSTI]

The present invention relates to the manufacture of thin film solid state electrochemical devices using composite cathodes comprising a redox polymer capable of undergoing oxidation and reduction, a polymer solid electrolyte and conducting carbon. The polymeric cathode material is formed as a composite of radiation crosslinked polymer electrolytes and radiation crosslinked redox polymers based on polysiloxane backbones with attached organosulfur side groups capable of forming sulfur-sulfur bonds during electrochemical oxidation.

Skotheim, T.A.; Lee, H.S.; Okamoto, Yoshiyuki.

1994-11-08T23:59:59.000Z

288

Synthesis of thin films and materials utilizing a gaseous catalyst  

DOE Patents [OSTI]

A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

2013-10-29T23:59:59.000Z

289

Optical sensors and multisensor arrays containing thin film electroluminescent devices  

DOE Patents [OSTI]

Optical sensor, probe and array devices for detecting chemical biological, and physical analytes. The devices include an analyte-sensitive layer optically coupled to a thin film electroluminescent layer which activates the analyte-sensitive layer to provide an optical response. The optical response varies depending upon the presence of an analyte and is detected by a photodetector and analyzed to determine the properties of the analyte.

Aylott, Jonathan W. (Ann Arbor, MI); Chen-Esterlit, Zoe (Ann Arbor, MI); Friedl, Jon H. (Ames, IA); Kopelman, Raoul (Ann Arbor, MI); Savvateev, Vadim N. (Ames, IA); Shinar, Joseph (Ames, IA)

2001-12-18T23:59:59.000Z

290

Fabrication and testing of thermoelectric thin film devices  

SciTech Connect (OSTI)

Two thin-film thermoelectric devices are experimentally demonstrated. The relevant thermal loads on the cold junction of these devices are determined. The analytical form of the equation that describes the thermal loading of the device enables one to model the performance based on the independently measured electronic properties of the films forming the devices. This model elucidates which parameters determine device performance, and how they can be used to maximize performance.

Wagner, A.V.; Foreman, R.J.; Summers, L.J.; Barbee, T.W. Jr.; Farmer, J.C. [Lawrence Livermore National Lab., CA (United States). Chemistry and Materials Science Dept.

1996-03-01T23:59:59.000Z

291

Substrates suitable for deposition of superconducting thin films  

DOE Patents [OSTI]

A superconducting system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

Feenstra, Roeland (Oak Ridge, TN); Boatner, Lynn A. (Oak Ridge, TN)

1993-01-01T23:59:59.000Z

292

Formation of thin-film resistors on silicon substrates  

DOE Patents [OSTI]

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

Schnable, George L. (Montgomery County, PA); Wu, Chung P. (Hamilton Township, Mercer County, NJ)

1988-11-01T23:59:59.000Z

293

Thin film adhesion by nanoindentation-induced superlayers. Final report  

SciTech Connect (OSTI)

This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

Gerberich, William W.; Volinsky, A.A.

2001-06-01T23:59:59.000Z

294

Study of Copper Diffusion Through Ruthenium Thin Film by Photoemission  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide Thin Films.AdministrationAerosol

295

Electrical properties of quench-condensed thin film  

E-Print Network [OSTI]

cryopump is used for high vacuum pumping. Materials to be evaporated (evaporant) are held by evaporation sources, like a crucible, boat or wire coil. Tungsten wire is commonly used as an evaporation source for materials like aluminum, nickel, chromium... films were evaporated at room temperature with NRC 3114 commercial thermal evaporator. We deposited aluminum and nickel thin films in a form of bar with shadow mask. A commercial tungsten basket was used for the evaporation source. The evaporation...

Lee, Kyoungjin

2009-05-15T23:59:59.000Z

296

MEMS-based thin-film fuel cells  

DOE Patents [OSTI]

A micro-electro-mechanical systems (MEMS) based thin-film fuel cells for electrical power applications. The MEMS-based fuel cell may be of a solid oxide type (SOFC), a solid polymer type (SPFC), or a proton exchange membrane type (PEMFC), and each fuel cell basically consists of an anode and a cathode separated by an electrolyte layer. Additionally catalyst layers can also separate the electrodes (cathode and anode) from the electrolyte. Gas manifolds are utilized to transport the fuel and oxidant to each cell and provide a path for exhaust gases. The electrical current generated from each cell is drawn away with an interconnect and support structure integrated with the gas manifold. The fuel cells utilize integrated resistive heaters for efficient heating of the materials. By combining MEMS technology with thin-film deposition technology, thin-film fuel cells having microflow channels and full-integrated circuitry can be produced that will lower the operating temperature an will yield an order of magnitude greater power density than the currently known fuel cells.

Jankowksi, Alan F.; Morse, Jeffrey D.

2003-10-28T23:59:59.000Z

297

Geometric shape control of thin film ferroelectrics and resulting structures  

DOE Patents [OSTI]

A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

298

International Conference on Technological Advances of Thin Films & Surface Coatings (Thin Films 2008), Singapore, 13-16 July 2008  

E-Print Network [OSTI]

were examined by XRD, UV-Vis, AFM and SEM. Compared with pure titania, the UV-Vis spectra of some Mn by the degradation of mono-chloroacetic acid in a microwave field using mercury electrodeless discharge lamp. The degradation efficiency of MCAA on some Mn+ doped TiO2 was higher than those of pure TiO2. Thin Films 212 #12;

Cirkva, Vladimir

299

Methods for fabricating thin film III-V compound solar cell  

DOE Patents [OSTI]

The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

2011-08-09T23:59:59.000Z

300

Cost and Reliability Improvement for CIGS-Based PV on Flexible Substrate: May 24, 2006 -- July 31, 2010  

SciTech Connect (OSTI)

Global Solar Energy rapidly advances the cost and performance of commercial thin-film CIGS products using roll-to-roll processing on steel foil substrate in compact, low cost deposition equipment, with in-situ sensors for real-time intelligent process control. Substantial increases in power module efficiency, which now exceed 13%, are evident at GSE factories in two countries with a combined capacity greater than 75 MW. During 2009 the average efficiency of cell strings (3780 cm2) was increased from 7% to over 11%, with champion results exceeding 13% Continued testing of module reliability in rigid product has reaffirmed extended life expectancy for standard glass product, and has qualified additional lower-cost methods and materials. Expected lifetime for PV in flexible packages continues to increase as failure mechanisms are elucidated, and resolved by better methods and materials. Cost reduction has been achieved through better materials utilization, enhanced vendor and material qualification and selection. The largest cost gains have come as a result of higher cell conversion efficiency and yields, higher processing rates, greater automation and improved control in all process steps. These improvements are integral to this thin film PV partnership program, and all realized with the 'Gen2' manufacturing plants, processes and equipment.

Wiedeman, S.

2011-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Microwave plasma assisted supersonic gas jet deposition of thin film materials  

DOE Patents [OSTI]

An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.

Schmitt, J.J. III; Halpern, B.L.

1993-10-26T23:59:59.000Z

302

Technical evaluation of Solar Cells, Inc., CdTe modules and array at NREL  

SciTech Connect (OSTI)

The Engineering and Technology Validation Team at the National Renewable Energy Laboratory (NREL) conducts in-situ technical evaluations of polycrystalline thin-film photovoltaic (PV) modules and arrays. This paper focuses on the technical evaluation of Solar Cells, Inc., (SCI) cadmium telluride (CdTe) module and array performance by attempting to correlate individual module and array performance. This is done by examining the performance and stability of the modules and array over a period of more than one year. Temperature coefficients for module and array parameters (P{sub max}V{sub oc}, V{sub max}, I{sub sc}, I{sub max}) are also calculated.

Kroposki, B.; Strand, T.; Hansen, R. [and others] [and others

1996-05-01T23:59:59.000Z

303

DEVELOPMENT OF HIGH EFFICIENCY FLEXIBLE CdTe SOLAR CELLS A.Romeo, M. Arnold, D.L. Btzner, H. Zogg and A.N. Tiwari*  

E-Print Network [OSTI]

to the solar panel that can be adapted to any kind of shape and is easy to deploy in space. In the last yearsDEVELOPMENT OF HIGH EFFICIENCY FLEXIBLE CdTe SOLAR CELLS A.Romeo, M. Arnold, D.L. Bätzner, H. Zogg Telephone: +44-1509-227031 E-mail: a.n.tiwari@lboro.ac.uk ABSTRACT: Polycrystalline thin film solar cells

Romeo, Alessandro

304

Studies of Block Copolymer Thin Films and Mixtures with an Ionic Liquid  

E-Print Network [OSTI]

identification of structure and domain size in block copolymer thin films using RSoXS enables a quantitative comparison of the bulk

Virgili, Justin

2009-01-01T23:59:59.000Z

305

Electrochemical kinetics of thin film vanadium pentoxide cathodes for lithium batteries  

E-Print Network [OSTI]

Electrochemical experiments were performed to investigate the processing-property-performance relations of thin film vanadium pentoxide cathodes used in lithium batteries. Variations in microstructures were achieved via ...

Mui, Simon C., 1976-

2005-01-01T23:59:59.000Z

306

E-Print Network 3.0 - active thin films Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Western Ontario a JOINT presentation of the Summary: and conducting thin films for optoelectronic applications from carbon nanotubes and graphene" ABSTRACT: Low... . The interest...

307

Study of GaN:Eu3+ Thin Films Deposited by Metallorganic  

E-Print Network [OSTI]

as an advantageous architecture for transparent electrodes in optoelectronic devices due primarily to high characteristics of electrodes in optoelectronic devices and in supercapactiors, we introduced oxide thin films

McKittrick, Joanna

308

Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy  

SciTech Connect (OSTI)

Flat, low-stress, boron-doped polysilicon thin films were prepared on single crystalline silicon substrates by low pressure chemical vapor deposition. It was found that the polysilicon films with different deposition processing have different microstructure properties. The confinement effect, tensile stresses, defects, and the Fano effect all have a great influence on the line shape of Raman scattering peak. But the effect results are different. The microstructure and the surface layer are two important mechanisms dominating the internal stress in three types of polysilicon thin films. For low-stress polysilicon thin film, the tensile stresses are mainly due to the change of microstructure after thermal annealing. But the tensile stresses in flat polysilicon thin film are induced by the silicon carbide layer at surface. After the thin film doped with boron atoms, the phenomenon of the tensile stresses increasing can be explained by the change of microstructure and the increase in the content of silicon carbide. We also investigated the disorder degree states for three polysilicon thin films by analyzing a constant C. It was found that the disorder degree of low-stress polysilicon thin film larger than that of flat and boron-doped polysilicon thin films due to the phase transformation after annealing. After the flat polysilicon thin film doped with boron atoms, there is no obvious change in the disorder degree and the disorder degree in some regions even decreases.

Wang, Quan, E-mail: wangq@mail.ujs.edu.cn [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Zhang, Yanmin; Hu, Ran; Ren, Naifei [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); Ge, Daohan [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-11-14T23:59:59.000Z

309

Chemical vapor deposition of organosilicon composite thin films for porous low-k dielectrics  

E-Print Network [OSTI]

Pulsed plasma enhanced chemical vapor deposition has produced organosilicon thin films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Both diethylsilane and ...

Ross, April Denise, 1977-

2005-01-01T23:59:59.000Z

310

Synthesis of nanomesh, thin film nanocomposite, nanocomposite membranes and synthesis of potassium ion selective membrane electrodes  

E-Print Network [OSTI]

Synthesis of nanomesh, thin film nanocomposite, nanocomposite membranes and synthesis of potassium and naofibers, which has potential use in protection of agricultural products from hailing. We developed

Singh, Jayant K.

311

abrasion-resistant thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

312

al-cu-fe thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

313

alendronate-hydroxyapatite thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

314

as2s3 thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

315

amorphous silicon thin-film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

amorphous silicon Kanicki, Jerzy 17 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

316

ag-in-se thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

317

Alta Devices Develops World Record Setting Thin-Film Solar Cell  

Office of Energy Efficiency and Renewable Energy (EERE)

EERE supported the development of Alta Devices' thin film Gallium Arsenide photovoltaic technology that set a world record for conversion efficiency.

318

B{sub 4}C thin films for neutron detection  

SciTech Connect (OSTI)

Due to the very limited availability of {sup 3}He, new kinds of neutron detectors, not based on {sup 3}He, are urgently needed. Here, we present a method to produce thin films of {sup 10}B{sub 4}C, with maximized detection efficiency, intended to be part of a new generation of large area neutron detectors. B{sub 4}C thin films have been deposited onto Al-blade and Si wafer substrates by dc magnetron sputtering from {sup nat}B{sub 4}C and {sup 10}B{sub 4}C targets in an Ar discharge, using an industrial deposition system. The films were characterized with scanning electron microscopy, elastic recoil detection analysis, x-ray reflectivity, and neutron radiography. We show that the film-substrate adhesion and film purity are improved by increased substrate temperature and deposition rate. A deposition rate of 3.8 A/s and substrate temperature of 400 deg. C result in films with a density close to bulk values and good adhesion to film thickness above 3 {mu}m. Boron-10 contents of almost 80 at. % are obtained in 6.3 m{sup 2} of 1 {mu}m thick {sup 10}B{sub 4}C thin films coated on Al-blades. Initial neutron absorption measurements agree with Monte Carlo simulations and show that the layer thickness, number of layers, neutron wavelength, and amount of impurities are determining factors. The study also shows the importance of having uniform layer thicknesses over large areas, which for a full-scale detector could be in total {approx}1000 m{sup 2} of two-side coated Al-blades with {approx}1 {mu}m thick {sup 10}B{sub 4}C films.

Hoeglund, Carina [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linkoeping University, SE-581 83 Linkoeping (Sweden); Birch, Jens; Jensen, Jens; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linkoeping University, SE-581 83 Linkoeping (Sweden); Andersen, Ken; Hall-Wilton, Richard [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Bigault, Thierry; Buffet, Jean-Claude; Correa, Jonathan; Esch, Patrick van; Guerard, Bruno; Piscitelli, Francesco [Institute Laue Langevin, Rue Jules Horowitz, FR-380 00 Grenoble (France); Khaplanov, Anton [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Institute Laue Langevin, Rue Jules Horowitz, FR-380 00 Grenoble (France); Vettier, Christian [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); European Synchrotron Radiation Facility, BP 220, FR-380 43 Grenoble Cedex 9 (France); Vollenberg, Wilhelmus [Vacuum, Surfaces and Coatings Group (TE/VSC), CERN, CH-1211 Geneva 23 (Switzerland)

2012-05-15T23:59:59.000Z

319

Modeling of capacitance transients of thin-film solar cells: A valuable tool to gain information on perturbing layers or interfaces  

SciTech Connect (OSTI)

Thin-film electronic and photovoltaic devices often comprise, in addition to the anticipated p-n junctions, additional non-ideal ohmic contacts between layers. This may give rise to additional signals in capacitance spectroscopy techniques that are not directly related to defects in the structure. In this paper, we present a fitting algorithm for transient signals arising from such an additional junction. The fitting results are in excellent agreement with the diode characteristics extracted from static measurements on individual components. Finally, the algorithm is applied for determining the barriers associated with anomalous signals reported for selected CuIn{sub 1–x}Ga{sub x}Se{sub 2} and CdTe solar cells.

Lauwaert, Johan, E-mail: Johan.Lauwaert@UGent.be; Van Puyvelde, Lisanne; Vrielinck, Henk [Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, 9000 Gent (Belgium); Lauwaert, Jeroen; Thybaut, Joris W. [Laboratory for Chemical Technology (LCT), Ghent University, Krijgslaan 281-S5, 9000 Gent (Belgium)

2014-02-03T23:59:59.000Z

320

Effects of Metastabilities on CIGS Photovoltaic Modules  

Broader source: Energy.gov [DOE]

This poster describes a SunShot Initiative solar project led by a team from Nexcis Photovoltaic Technology entitled "Effects of Metastabilities on CIGS Photovoltaic Modules." The team studied the driving force of the mechanisms which governs the different observed phases during storage, light exposition and annealing. The aim of this study is to obtain a better understanding of this phenomenon and hence a better evaluation of its impact on solar panel reliability.

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Thin film solar cell including a spatially modulated intrinsic layer  

DOE Patents [OSTI]

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

Guha, Subhendu (Troy, MI); Yang, Chi-Chung (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

1989-03-28T23:59:59.000Z

322

Durable silver thin film coating for diffraction gratings  

DOE Patents [OSTI]

A durable silver film thin film coated non-planar optical element has been developed to replace Gold as a material for fabricating such devices. Such a coating and resultant optical element has an increased efficiency and is resistant to tarnishing, can be easily stripped and re-deposited without modifying underlying grating structure, improves the throughput and power loading of short pulse compressor designs for ultra-fast laser systems, and can be utilized in variety of optical and spectrophotometric systems, particularly high-end spectrometers that require maximized efficiency.

Wolfe, Jesse D. (Discovery Bay, CA); Britten, Jerald A. (Oakley, CA); Komashko, Aleksey M. (San Diego, CA)

2006-05-30T23:59:59.000Z

323

Oriented niobate ferroelectric thin films for electrical and optical devices  

DOE Patents [OSTI]

Sr.sub.x Ba.sub.1-x Nb.sub.2 O.sub.6, where x is greater than 0.25 and less than 0.75, and KNbO.sub.3 ferroelectric thin films metalorganic chemical vapor deposited on amorphous or cyrstalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface. Such films can be used in electronic, electro-optic, and frequency doubling components.

Wessels, Bruce W. (Wilmette, IL); Nystrom, Michael J. (Chicago, IL)

2001-01-01T23:59:59.000Z

324

Control of magnetization reversal in oriented strontium ferrite thin films  

SciTech Connect (OSTI)

Oriented Strontium Ferrite films with the c axis orientation were deposited with varying oxygen partial pressure on Al{sub 2}O{sub 3}(0001) substrate using Pulsed Laser Deposition technique. The angle dependent magnetic hysteresis, remanent coercivity, and temperature dependent coercivity had been employed to understand the magnetization reversal of these films. It was found that the Strontium Ferrite thin film grown at lower (higher) oxygen partial pressure shows Stoner-Wohlfarth type (Kondorsky like) reversal. The relative importance of pinning and nucleation processes during magnetization reversal is used to explain the type of the magnetization reversal with different oxygen partial pressure during growth.

Roy, Debangsu, E-mail: debangsu@physics.iisc.ernet.in; Anil Kumar, P. S. [Department of Physics, Indian Institute of Science, Bangalore 560012 (India)

2014-02-21T23:59:59.000Z

325

Laser-induced metallic nanograined thin films processing  

SciTech Connect (OSTI)

A direct laser writing method for designing metallic nanograined thin films is presented. This method takes advantage of photon conversion within a chemical process localized at the focal point. A computer controlled positioning system allows the control of experimental parameters and spatial resolution of the pattern. Spectroscopic investigations reveal variable attenuation of the optical properties in UV-visible range and a spectral imaging processing algorithm simulated the functionality of these films in visible light. This could be an important step for obtaining neutral density attenuators.

Tosa, Nicoleta, E-mail: nicoleta.tosa@itim-cj.ro, E-mail: florin.toadere@itim-cj.ro; Toadere, Florin, E-mail: nicoleta.tosa@itim-cj.ro, E-mail: florin.toadere@itim-cj.ro; Hojbota, Calin, E-mail: nicoleta.tosa@itim-cj.ro, E-mail: florin.toadere@itim-cj.ro; Tosa, Valer, E-mail: nicoleta.tosa@itim-cj.ro, E-mail: florin.toadere@itim-cj.ro [National Institute for Research and Development of Isotopic and Molecular Technologies, 65-103 Donath., 400293 Cluj-Napoca (Romania)] [National Institute for Research and Development of Isotopic and Molecular Technologies, 65-103 Donath., 400293 Cluj-Napoca (Romania)

2013-11-13T23:59:59.000Z

326

Electron cyclotron resonance microwave ion sources for thin film processing  

SciTech Connect (OSTI)

Plasmas created by microwave absorption at the electron cyclotron resonance (ECR) are increasingly used for a variety of plasma processes, including both etching and deposition. ECR sources efficiently couple energy to electrons and use magnetic confinement to maximize the probability of an electron creating an ion or free radical in pressure regimes where the mean free path for ionization is comparable to the ECR source dimensions. The general operating principles of ECR sources are discussed with special emphasis on their use for thin film etching. Data on source performance during Cl base etching of Si using an ECR system are presented. 32 refs., 5 figs.

Berry, L.A.; Gorbatkin, S.M.

1990-01-01T23:59:59.000Z

327

Photoresponse of Tb{sup 3+} doped phosphosilicate thin films  

SciTech Connect (OSTI)

Phosphosilicate ceramic was doped with Tb{sup 3+} using sol-gel technique to prepare thin films. The films were prepared by spin coating the phosphosilicate sols on SiO{sub x}/indium-tin-oxide/glass substrates. The photocurrent of the films at 355 nm laser excitation was observed. The photoresponse as a function of applied field and laser energy was linear and showed no sign of saturation. The films exhibited very stable photoresponse under a very high number of laser shots.

Lee, B.L.; Cao, Z. [Clemson Univ., SC (United States). Gilbert C. Robinson Dept. of Ceramic and Materials Engineering] [Clemson Univ., SC (United States). Gilbert C. Robinson Dept. of Ceramic and Materials Engineering; Sisk, W.N.; Hudak, J. [Univ. of North Carolina, Charlotte, NC (United States)] [Univ. of North Carolina, Charlotte, NC (United States); Samuels, W.D.; Exarhos, G.J. [Pacific Northwest National Lab., Richland, WA (United States). Materials and Chemical Science] [Pacific Northwest National Lab., Richland, WA (United States). Materials and Chemical Science

1997-09-01T23:59:59.000Z

328

Fractal-Mound Growth of Pentacene Thin Films  

E-Print Network [OSTI]

The growth mechanism of pentacene film formation on SiO2 substrate was investigated with a combination of atomic force microscopy measurements and numerical modeling. In addition to the diffusion-limited aggregation (DLA) that has already been shown to govern the growth of the ordered pentacene thin films, it is shown here for the first time that the Schwoebel barrier effect steps in and disrupts the desired epitaxial growth for the subsequent layers, leading to mound growth. The terraces of the growing mounds have a fractal dimension of 1.6, indicating a lateral DLA shape. This novel growth morphology thus combines horizontal DLA-like growth with vertical mound growth.

Serkan Zorba; Yonathan Shapir; Yongli Gao

2006-10-19T23:59:59.000Z

329

Thin-film electrochemical power cells. Final report  

SciTech Connect (OSTI)

Fundamental properties of research cells were correlated with the projected performance of full scale power sources, considering both battery and supercapacitor concepts. In addition to establishing the data base for modelling and performance projections, the program had the additional objective of identifying loss mechanisms and degradation reactions, especially those unique to polymer thin film cell designs. Because of the intrinsic high electrode/electrolyte interface areas, interfacial reactions must be understood. Many applications require power under extreme conditions, and low temperature performance needs to be improved.

Owens, B.B.; Smyrl, W.H.

1991-01-01T23:59:59.000Z

330

Guided Self-Assembly of Gold Thin Films  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickr FlickrGuided Self-Assembly of Gold Thin Films Print

331

Guided Self-Assembly of Gold Thin Films  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickr FlickrGuided Self-Assembly of Gold Thin Films PrintGuided

332

Deposition and characterization of Cd{sub 1?x}Mg{sub x}Te thin films grown by a novel cosublimation method  

SciTech Connect (OSTI)

Photovoltaic cells utilizing the CdS/CdTe structure have improved substantially in the past few years. Despite the recent advances, the efficiency of CdS/CdTe cells is still significantly below their Shockley–Queisser limit. CdTe based ternary alloy thin films, such as Cd{sub 1?x}Mg{sub x}Te (CMT), could be used to improve efficiency of CdS/CdTe photovoltaic cells. Higher band gap Cd{sub 1?x}Mg{sub x}Te films can be the absorber in top cells of a tandem structure or an electron reflector layer in CdS/CdTe cells. A novel cosublimation method to deposit CMT thin films has been developed. This method can deposit CMT films of band gaps ranging from 1.5 to 2.3?eV. The cosublimation method is fast, repeatable, and scalable for large areas, making it suitable for implementing into large-scale manufacturing. Characterization of as-deposited CMT films, with x varying from 0 to 0.35, reveals a linear relationship between Mg content measured by energy dispersive x-ray spectroscopy and the optical band gap. Glancing angle x-ray diffraction (GAXRD) measurements of Cd{sub 1?x}Mg{sub x}Te films show a zinc-blende structure similar to CdTe. Furthermore, increasing Mg content decreases the lattice parameter and the grain size. GAXRD shows the films are under mild tension after deposition.

Kobyakov, Pavel S., E-mail: pskobyak@rams.colostate.edu; Swanson, Drew E.; Sampath, Walajabad S. [Department of Mechanical Engineering, Colorado State University, 1374 Campus Delivery, Fort Collins, Colorado 80523 (United States); Moore, Andrew; Raguse, John M. [Department of Physics, Colorado State University, 1875 Campus Delivery, Fort Collins, Colorado 80523 (United States)

2014-03-15T23:59:59.000Z

333

Stress Induced Degradation Modes in CIGS Mini-Modules: Preprint  

SciTech Connect (OSTI)

This study demonstrates that the method of encapsulation can affect the long-term stability of CIGS modules, principally through interactions with the ZnO.

Kempe, M. D.; Terwilliger, K. M.; Tarrant, D.

2008-05-01T23:59:59.000Z

334

Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor  

E-Print Network [OSTI]

The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films...

Nominanda, Helinda

2004-01-01T23:59:59.000Z

335

Sputter deposition for multi-component thin films  

DOE Patents [OSTI]

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

Krauss, Alan R. (Plainfield, IL); Auciello, Orlando (Cary, NC)

1990-01-01T23:59:59.000Z

336

Sputter deposition for multi-component thin films  

DOE Patents [OSTI]

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

Krauss, A.R.; Auciello, O.

1990-05-08T23:59:59.000Z

337

Residual Stress Relaxation and Microstructure in ZnO Thin Films Istem Ozena  

E-Print Network [OSTI]

to be eliminated during deposition. Introduction In this study, the decay of the residual stressesResidual Stress Relaxation and Microstructure in ZnO Thin Films Istem Ozena and Mehmet Ali Gulgunb. a istem@sabanciuniv.edu b m-gulgun@sabanciuniv.edu Keywords: ZnO, thin films, residual stress

Yanikoglu, Berrin

338

NONLINEAR SAW PROPAGATION IN THIN-FILM SYSTEMS WITH RESIDUAL STRESS* R. E. Kumon  

E-Print Network [OSTI]

harmonics. I. INTRODUCTION AND MOTIVATION The thin-film deposition process can create large residualNONLINEAR SAW PROPAGATION IN THIN-FILM SYSTEMS WITH RESIDUAL STRESS* R. E. Kumon National Institute is the residual stress. The effective elas- tic constants and density are given by Ceff ijkl = Cijkl(1 - eres

339

Influence of Ba content on grain size and dynamics of crystallization in barium ferrite thin films  

E-Print Network [OSTI]

Influence of Ba content on grain size and dynamics of crystallization in barium ferrite thin films of the crystallization process, which ultimately determines the grain size, were studied in barium ferrite thin films. Rapid thermal annealing was used to crystallize the amorphous as-deposited barium ferrite films

Laughlin, David E.

340

Study of lithium diffusion in RF sputtered Nickel/Vanadium mixed oxides thin films  

E-Print Network [OSTI]

Study of lithium diffusion in RF sputtered NickelÁ/Vanadium mixed oxides thin films F. Artuso a lithium insertion inside RF sputtered Ni/V mixed oxides thin films have been investigated employing, showed three steps clearly involved in the intercalation mechanism of lithium in the oxide films: (i

Artuso, Florinda

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Thin-film Lithium Niobate Contour-mode Resonators Renyuan Wang and Sunil A. Bhave  

E-Print Network [OSTI]

Thin-film Lithium Niobate Contour-mode Resonators Renyuan Wang and Sunil A. Bhave School Micro Devices, Inc. Greensboro, North Carolina, USA Abstract--This paper presents Lithium Niobate (LN this platform, we demonstrate, on a black Y136 cut Lithium Niobate thin-film, one-port high-order width

Afshari, Ehsan

342

The effect of stress on the dielectric properties of barium strontium titanate thin films  

E-Print Network [OSTI]

The effect of stress on the dielectric properties of barium strontium titanate thin films T. M Barium strontium titanate thin films are being developed as capacitors in dynamic random access memories to their large permittivities, barium strontium titan- ate BST bulk ceramics have long been used to make high

Suo, Zhigang

343

High tunability barium strontium titanate thin films for rf circuit applications  

E-Print Network [OSTI]

High tunability barium strontium titanate thin films for rf circuit applications N. K. Pervez,a) P) Large variations in the permittivity of rf magnetron sputtered thin-film barium strontium titanate have/cm. © 2004 American Institute of Physics. [DOI: 10.1063/1.1818724] Barium strontium titanate (BST) is a solid

York, Robert A.

344

Optimization of High Tunability Barium Strontium Titanate Thin Films Grown by RF Magnetron  

E-Print Network [OSTI]

Optimization of High Tunability Barium Strontium Titanate Thin Films Grown by RF Magnetron Abstract-- Barium strontium titanate is a solid solution perovskite with a field-dependent permittivity.7 MV/cm. I. INTRODUCTION In recent years there has been much interest in thin-film barium strontium

York, Robert A.

345

Discrete Barium Strontium Titanate (BST) Thin-Film Interdigital Varactors on Alumina: Design, Fabrication, Characterization, and  

E-Print Network [OSTI]

Discrete Barium Strontium Titanate (BST) Thin-Film Interdigital Varactors on Alumina: Design, Raleigh, NC-27695-7914, USA. Email:jayeshnath@ieee.org Abstract -- Discrete Barium Strontium Titanate (BST, capacitors, BST, ferroelectric, thin-film, barium strontium titanate, bandpass filter, IP3, ACPR, temperature

346

Self-similar solutions for a fractional thin film equation governing hydraulic fractures  

E-Print Network [OSTI]

Self-similar solutions for a fractional thin film equation governing hydraulic fractures C. Imbert equation governing hydraulic fractures are constructed. One of the boundary con- ditions, which accounts, 35R11, 35C06 Keywords: Hydraulic fractures, higher order equation, thin films, fractional Laplacian

Boyer, Edmond

347

Rubbery Graft Copolymer Electrolytes for Solid-State, Thin-Film Lithium Batteries  

E-Print Network [OSTI]

Rubbery Graft Copolymer Electrolytes for Solid-State, Thin-Film Lithium Batteries Patrick E. Trapa to be stable over a wide temperature range and voltage window. Solid-state, thin-film batteries comprised triflate-doped POEM-g-PDMS, which exhibited solid-like mechanical behavior, were nearly identical to those

Sadoway, Donald Robert

348

Organic thin film devices with stabilized threshold voltage and mobility, and method for preparing the devices  

DOE Patents [OSTI]

Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (.mu.) and threshold voltage (VT), a decrease in contact resistance R.sub.C, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.

Nastasi, Michael Anthony; Wang, Yongqiang; Fraboni, Beatrice; Cosseddu, Piero; Bonfiglio, Annalisa

2013-06-11T23:59:59.000Z

349

Fully Integrated Applications of Thin Films on Low Temperature Cofired Ceramic (LTCC)  

SciTech Connect (OSTI)

Thin film multilayers have previously been introduced on multilayer low temperature cofired ceramic (LTCC), as well as initial thin film capacitors on LTCC. The ruggedness of a multipurpose Ti-Cu-Pt-Au stack for connectivity and RF conductivity has continued to benefit fabrication and reliability in state of-the-art modules, while the capacitors have followed the traditional Metal-Insulator-Metal (MIM) style. The full integration of thin film passives with thin film connectivity traces is presented. Certain passives, such as capacitors, require specifically tailored and separately patterned thin film (multi-)layers, including a dielectric. Different capacitance values are achieved by variation of both the insulator layer thickness and the active area of the capacitor. Other passives, such as filters, require only the conductor - a single thin film multilayer. This can be patterned from the same connectivity thin film material (Ti-Cu-Pt-Au), or a specially tailored thin film material (e.g. Ti-Cu-Au) can be deposited. Both versions are described, including process and integration details. Examples are discussed, ranging from patterning for maximum tolerances, to space and performance-optimized designs. Cross-sectional issues associated with integration are also highlighted in the discussion.

Ambrose Wolf; Ken Peterson; Matt O'Keefe; Wayne Huebner; Bill Kuhn

2012-04-19T23:59:59.000Z

350

High temperature thermoelectric characterization of III-V semiconductor thin films by oxide bonding  

E-Print Network [OSTI]

-W-N diffusion barrier. A thermoelectric material, thin film ErAs:InGaAlAs metal/semiconductor nanocomposite temperature to 840 K for this material and the results show the thermoelectric power factor multiplied material characterization of semiconductor thin films for thermoelectric power generation, photovoltaic

Bowers, John

351

High-Temperature Thermoelectric Characterization of IIIV Semiconductor Thin Films by Oxide Bonding  

E-Print Network [OSTI]

-temperature thermoelectric charac- terization of thin-film III­V semiconductor materials that suffer from the side- effect-temperature surface passivation, and metallization with a Ti-W-N diffusion barrier. A thermoelectric material, thin-temperature material characterization of semiconductor thin films for thermoelectric power generation, photovoltaic

352

Effect of Quantum Confinement on Thermoelectric Properties of 2D and 1D Semiconductor Thin Films  

E-Print Network [OSTI]

Effect of Quantum Confinement on Thermoelectric Properties of 2D and 1D Semiconductor Thin Films A. Bulusu and D. G. Walker1 Interdisciplinary Program in Material Science Vanderbilt University Nashville on device characteristics of 1D and 2D thin film superlattices whose applications include thermoelectric

Walker, D. Greg

353

High Frequency Characteristicsof NanocompositeThin Film "Supercapacitors" and their Suitability For EmbeddedDecoupling  

E-Print Network [OSTI]

High Frequency Characteristicsof NanocompositeThin Film "Supercapacitors" and their Suitability, the capacitance density would be much lower. Newer capacitor concepts such as supercapacitors can overcome and the suitability of the thin film supercapacitors for high-frequency decoupling applications will be discussed. 1

Swaminathan, Madhavan

354

LIQUID PHASE DEPOSITION OF ELECTROCHROMIC THIN FILMS T. J. Richardson and M. D. Rubin  

E-Print Network [OSTI]

1 LIQUID PHASE DEPOSITION OF ELECTROCHROMIC THIN FILMS T. J. Richardson and M. D. Rubin electrochromism with high coloration efficiencies. These nickel oxide films were particularly stable compared, and readily scalable to larger substrates. Keywords: liquid phase deposition; electrochromic films; thin film

355

Resonant cavity enhanced light harvesting in flexible thin-film organic solar cells  

E-Print Network [OSTI]

Resonant cavity enhanced light harvesting in flexible thin-film organic solar cells Nicholas P of solar energy conversion be- cause they use thin films of photoactive material and can be manufactured and photocurrent in flexible organic solar cells. We demonstrate that this enhancement is attributed to a broadband

Fan, Shanhui

356

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells  

E-Print Network [OSTI]

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A. Rockettb , M. Edoffa , L. Stolta a A°ngstro¨m Solar Center, Uppsala University, P.O. Box 534, SE-751 21 Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been

Rockett, Angus

357

Nano-photonic Light Trapping In Thin Film Solar Dennis M. Callahan Jr.  

E-Print Network [OSTI]

Nano-photonic Light Trapping In Thin Film Solar Cells Thesis by Dennis M. Callahan Jr. In Partial. Jeremy Munday for helping me get started on the thin-film GaAs project and for all the time we spent to thank Dr. Jonathan Grandidier for working closely with me for a couple years on the nano sphere solar

Winfree, Erik

358

METAL BLACKS AS SCATTERING CENTERS TO INCREASE THE EFFICIENCY OF THIN FILM SOLAR CELLS  

E-Print Network [OSTI]

METAL BLACKS AS SCATTERING CENTERS TO INCREASE THE EFFICIENCY OF THIN FILM SOLAR CELLS by DEEP R surface of thin-film solar cells to improve efficiency. The principle is that scattering, which film solar cell. The particular types of particles investigated here are known as "metal-black", well

Peale, Robert E.

359

EPMA Instructions for Thin Film Samples General guidelines to reading computer related commands  

E-Print Network [OSTI]

EPMA Instructions for Thin Film Samples General guidelines to reading computer related commands: `Single quote' = menu item, window, or icon "Double quote" = something you type = button you your sample, thin film up, on the dot of epoxy 4. Repeat until all samples are on the puck 5. Flip your

360

Electric Field Induced Sphere-to-Cylinder Transition in Diblock Copolymer Thin Films  

E-Print Network [OSTI]

Electric Field Induced Sphere-to-Cylinder Transition in Diblock Copolymer Thin Films Ting Xu, A. V Manuscript Received June 21, 2004 ABSTRACT: An electric field induced sphere-to-cylinder transition in thin. In the absence of an applied electric field, thin films of the asymmetric diblock copolymer consisted of layers

Ocko, Ben

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Energy harvesting properties of all-thin-film multiferroic cantilevers Tiberiu-Dan Onuta,1,a)  

E-Print Network [OSTI]

Energy harvesting properties of all-thin-film multiferroic cantilevers Tiberiu-Dan Onuta,1,a) Yi 18 November 2011) We have measured electromagnetic energy harvesting properties of all piezoelectric thin film. The harvested peak power at 1 Oe is 0.7 mW/cm3 (RMS) at the resonant frequency (3.8 k

Rubloff, Gary W.

362

Measuring the fracture toughness of ultra-thin films with application to AlTa coatings  

E-Print Network [OSTI]

1 Measuring the fracture toughness of ultra-thin films with application to AlTa coatings Yong Xiang Abstract An experimental technique is presented for measuring the fracture toughness of brittle thin films with a focused ion beam and the membranes are pressurized until rupture. The fracture stress of the membrane

363

Carbon nanotube thin films with ordered structures Chunsheng Du,a  

E-Print Network [OSTI]

Carbon nanotube thin films with ordered structures Chunsheng Du,a Jeff Yehb and Ning Pan*a Received December 2004 DOI: 10.1039/b414682d Carbon nanotube thin films with ordered structures have been developed properties, carbon nanotubes have aroused a great deal of research interest, and a wider range of potential

Pan, Ning

364

Mathematical Model of Charge and Density Distributions in Interfacial Polymerization of Thin Films  

E-Print Network [OSTI]

Mathematical Model of Charge and Density Distributions in Interfacial Polymerization of Thin Films INTRODUCTION Interfacial polymerization (IP) as a method of prepa- ration of thin film composite (TFC, and waste treatment. IP is also highly suitable for manufacturing polymeric films, such as polyamides

Freger, Viatcheslav "Slava"

365

X-ray Absorption Spectroscopy of Transition Metal-Magnesium Hydride Thin Films  

E-Print Network [OSTI]

X-ray Absorption Spectroscopy of Transition Metal-Magnesium Hydride Thin Films T. J. Richardsona@lbl.gov Abstract Mixed metal thin films containing magnesium and a first-row transition element exhibit very large and coordination of the magnesium and transition metal atoms during hydrogen absorption were studied using dynamic

366

Extended light scattering model incorporating coherence for thin-film silicon solar cells  

E-Print Network [OSTI]

Extended light scattering model incorporating coherence for thin-film silicon solar cells Thomas film solar cells. The model integrates coherent light propagation in thin layers with a direct, non potential for light trapping in textured thin film silicon solar cells. VC 2011 American Institute

Lenstra, Arjen K.

367

Plasticity in Cu thin films: an experimental investigation of the effect of microstructure  

E-Print Network [OSTI]

Plasticity in Cu thin films: an experimental investigation of the effect of microstructure A thesis Author Joost J. Vlassak Yong Xiang Plasticity in Cu thin films: an experimental investigation is constructed. The elastic-plastic behavior of Cu films is studied with emphasis on the effects

368

Plasticity contributions to interface adhesion in thin-film interconnect structures  

E-Print Network [OSTI]

Plasticity contributions to interface adhesion in thin-film interconnect structures Michael Lanea of plasticity in thin copper layers on the interface fracture resistance in thin-film interconnect structures yield properties together with a plastic flow model for the metal layers were used to predict

Vainchtein, Anna

369

High-throughput analysis of thin-film stresses using arrays of micromachined cantilever beams  

E-Print Network [OSTI]

High-throughput analysis of thin-film stresses using arrays of micromachined cantilever beams Hyun-throughput residual stress measurements on thin films by means of micromachined cantilever beams and an array of parallel laser beams. In this technique, the film of interest is deposited onto a silicon substrate

370

Bill Shafarman 1 May 15, 2013 Thin Film Photovoltaics Research at the  

E-Print Network [OSTI]

Bill Shafarman 1 May 15, 2013 Thin Film Photovoltaics Research at the Institute of Energy of Photovoltaics 2. IEC: History and Capabilities 3. Current Research at IEC #12;Bill Shafarman 2 May 15, 2013 Concentrators #12;Bill Shafarman 5 May 15, 2013 Thin Film Photovoltaics Potential for low cost PV using " a

Firestone, Jeremy

371

Comparative study of the mechanical properties of nanostructured thin films on stretchable substrates  

SciTech Connect (OSTI)

Comparative studies of the mechanical behavior between copper, tungsten, and W/Cu nanocomposite based on copper dispersoïd thin films were performed under in-situ controlled tensile equi-biaxial loadings using both synchrotron X-ray diffraction and digital image correlation techniques. The films first deform elastically with the lattice strain equal to the true strain given by digital image correlation measurements. The Cu single thin film intrinsic elastic limit of 0.27% is determined below the apparent elastic limit of W and W/Cu nanocomposite thin films, 0.30% and 0.49%, respectively. This difference is found to be driven by the existence of as-deposited residual stresses. Above the elastic limit on the lattice strain-true strain curves, we discriminate two different behaviors presumably footprints of plasticity and fracture. The Cu thin film shows a large transition domain (0.60% true strain range) to a plateau with a smooth evolution of the curve which is associated to peak broadening. In contrast, W and W/Cu nanocomposite thin films show a less smooth and reduced transition domain (0.30% true strain range) to a plateau with no peak broadening. These observations indicate that copper thin film shows some ductility while tungsten/copper nanocomposites thin films are brittle. Fracture resistance of W/Cu nanocomposite thin film is improved thanks to the high compressive residual stress and the elimination of the metastable ?-W phase.

Djaziri, S. [Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Straße 1, 40237 Düsseldorf (Germany); Institut P' (UPR 3346 CNRS), Université de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Renault, P.-O.; Le Bourhis, E.; Goudeau, Ph., E-mail: Philippe.goudeau@univ-poitiers.fr [Institut P' (UPR 3346 CNRS), Université de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Faurie, D. [LSPM, (UPR 3407 CNRS), Université Paris 13, Institut Galilée, 99 avenue Jean-Baptiste Clément, 93430 Villetaneuse (France); Geandier, G. [Institut Jean Lamour (UMR 3079 CNRS), Université de Lorraine, Parc de Saurupt, CS 50840, 54011 NANCY Cedex (France); Mocuta, C.; Thiaudière, D. [Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette Cedex (France)

2014-09-07T23:59:59.000Z

372

Highly Stable Hysteresis-Free Carbon Nanotube Thin-Film Transistors by Fluorocarbon Polymer Encapsulation  

E-Print Network [OSTI]

Highly Stable Hysteresis-Free Carbon Nanotube Thin-Film Transistors by Fluorocarbon Polymer report hysteresis-free carbon nanotube thin-film transistors (CNT-TFTs) employing a fluorocarbon polymer (Teflon-AF) as an encapsulation layer. Such fluorocarbon encapsulation improves device uniformity

Javey, Ali

373

Electrochemical Behavior and Li Diffusion Study of LiCoO? Thin Film Electrodes Prepared by PLD  

E-Print Network [OSTI]

Preferred c-axis oriented LiCoO? thin films were prepared on the SiO?/Si (SOS) substrates by pulsed laser deposition (PLD). Thin film electrodes without carbon and binder are ideal samples to study the electrochemical ...

Xia, H.

374

Advanced CdTe Photovoltaic Technology: September 2007 - March 2009  

SciTech Connect (OSTI)

During the last eighteen months, Abound Solar (formerly AVA Solar) has enjoyed significant success under the SAI program. During this time, a fully automated manufacturing line has been developed, fabricated and commissioned in Longmont, Colorado. The facility is fully integrated, converting glass and semiconductor materials into complete modules beneath its roof. At capacity, a glass panel will enter the factory every 10 seconds and emerge as a completed module two hours later. This facility is currently undergoing trials in preparation for large volume production of 120 x 60 cm thin film CdTe modules. Preceding the development of the large volume manufacturing capability, Abound Solar demonstrated long duration processing with excellent materials utilization for the manufacture of high efficiency 42 cm square modules. Abound Solar prototype modules have been measured with over 9% aperture area efficiency by NREL. Abound Solar demonstrated the ability to produce modules at industry leading low costs to NREL representatives. Costing models show manufacturing costs below $1/Watt and capital equipment costs below $1.50 per watt of annual manufacturing capacity. Under this SAI program, Abound Solar supported a significant research and development program at Colorado State University. The CSU team continues to make progress on device and materials analysis. Modeling for increased device performance and the effects of processing conditions on properties of CdTe PV were investigated.

Barth, K.

2011-05-01T23:59:59.000Z

375

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network [OSTI]

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

Atwater, Harry

376

Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a  

E-Print Network [OSTI]

Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a J. D. Servaites thin-film solar cell types: hydrogenated amorphous silicon a-Si:H p-i-n cells, organic bulk understanding of thin film solar cell device physics, including important module performance variability issues

Alam, Muhammad A.

377

Enhancement of optical absorption in thin-film organic solar cells through the excitation of plasmonic modes in metallic gratings  

E-Print Network [OSTI]

Enhancement of optical absorption in thin-film organic solar cells through the excitation 2010 We theoretically investigate the enhancement of optical absorption in thin-film organic solar.1063/1.3377791 Thin-film organic solar cells OSCs are a promising candidate for low-cost energy conversion.1­6 However

Veronis, Georgios

378

THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te-CdTe HETEROJUNCTIONS (1)  

E-Print Network [OSTI]

195 THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te This paper is a short status report on the continuing development of Cu22014xTe-CdTe thin film solar cells Company has had a conti- nuous effort on thin film solar cells for the past four and a half years

Paris-Sud XI, Université de

379

Hole-conductor-free perovskite organic lead iodide heterojunction thin-film solar cells: High efficiency and junction property  

E-Print Network [OSTI]

Hole-conductor-free perovskite organic lead iodide heterojunction thin-film solar cells: High-conductor-free organic lead iodide thin film solar cells have been fabricated with a sequential deposition method are comparable to that of the high-efficiency thin-film solar cells. VC 2014 AIP Publishing LLC. [http

Wang, Wei Hua

380

Growth of plasma-polymerized thin films by PECVD method and study on their surface and optical characteristics  

E-Print Network [OSTI]

Growth of plasma-polymerized thin films by PECVD method and study on their surface and optical properties of plasma-polymerized organic thin films with various RF power. AFM data showed that the plasma-polymerized. The surface and optical properties of as-grown plasma-polymerized thin films were analyzed by contact angle

Boo, Jin-Hyo

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

CIGS Material and Device Stability: A Processing Perspective (Presentation)  

SciTech Connect (OSTI)

This is a general overview of CIGS material and device fundamentals. In the first part, the basic features of high efficiency CIGS absorbers and devices are described. In the second part, some examples of previous collaboration with Shell Solar CIGSS graded absorbers and devices are shown to illustrate how process information was used to correct deviations and improve the performance and stability.

Ramanathan, K.

2012-03-01T23:59:59.000Z

382

The effects of high temperature processing on the structural and optical properties of oxygenated CdS window layers in CdTe solar cells  

SciTech Connect (OSTI)

High efficiency CdTe solar cells typically use oxygenated CdS (CdS:O) window layers. We synthesize CdS:O window layers at room temperature (RT) and 270?°C using reactive sputtering. The band gaps of CdS:O layers deposited at RT increase when O{sub 2}/(O{sub 2}?+?Ar) ratios in the deposition chamber increase. On the other hand, the band gaps of CdS:O layers deposited at 270?°C decrease as the O{sub 2}/(O{sub 2}?+?Ar) ratios increase. Interestingly, however, our high temperature closed-space sublimation (CSS) processed CdTe solar cells using CdS:O window layers deposited at RT and 270?°C exhibit very similar cell performance, including similar short-circuit current densities. To understand the underlying reasons, CdS:O thin films deposited at RT and 270?°C are annealed at temperatures that simulate the CSS process of CdTe deposition. X-ray diffraction, atomic force microscopy, and UV-visible light absorption spectroscopy characterization of the annealed films reveals that the CdS:O films deposited at RT undergo grain regrowth and/or crystallization and exhibit reduced band gaps after the annealing. Our results suggest that CdS:O thin films deposited at RT and 270?°C should exhibit similar optical properties after the deposition of CdTe layers, explaining the similar cell performance.

Paudel, Naba R.; Grice, Corey R.; Xiao, Chuanxiao; Yan, Yanfa [Department of Physics and Astronomy, and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio 43606 (United States)

2014-07-28T23:59:59.000Z

383

Coulomb impurity scattering in topological insulator thin films  

SciTech Connect (OSTI)

Inter-surface coupling in thin-film topological insulators can reduce the surface state mobility by an order of magnitude in low-temperature transport measurements. The reduction is caused by a reduction in the group velocity and an increased s{sub z} component of the surface-state spin which weakens the selection rule against large-angle scattering. An intersurface potential splits the degenerate bands into a Rashba-like bandstructure. This reduces the intersurface coupling, it largely restores the selection rule against large angle scattering, and the ring-shaped valence band further reduces backscattering by requiring, on average, larger momentum transfer for backscattering events. The effects of temperature, Fermi level, and intersurface potential on the Coulomb impurity scattering limited mobility are analyzed and discussed.

Yin, Gen; Wickramaratne, Darshana; Lake, Roger K., E-mail: rlake@ee.ucr.edu [Department of Electrical Engineering, University of California, Riverside, California 92521 (United States); Zhao, Yuanyuan [Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, Texas 77204 (United States)

2014-07-21T23:59:59.000Z

384

Studies on nickel-tungsten oxide thin films  

SciTech Connect (OSTI)

Nickel-Tungsten oxide (95:5) thin films were prepared by rf sputtering at 200W rf power with various substrate temperatures. X-ray diffraction study reveals the amorphous nature of films. The substrate temperature induced decrease in energy band gap with a maximum transmittance of 71%1 was observed. The Micro-Raman study shows broad peaks at 560 cm{sup ?1} and 1100 cm{sup ?1} correspond to Ni-O vibration and the peak at 860 cm{sup ?1} can be assigned to the vibration of W-O-W bond. Photoluminescence spectra show two peaks centered on 420 nm and 485 nm corresponding to the band edge emission and vacancies created due to the addition of tungsten, respectively.

Usha, K. S. [Department of Physics, Alagappa University, Karaikudi - 630 004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi - 630 004 (India); Sanjeeviraja, C. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi - 630 004 (India)

2014-10-15T23:59:59.000Z

385

Gain properties of dye-doped polymer thin films  

E-Print Network [OSTI]

The demonstration of an electrically pumped organic laser remains a major issue of organic optoelectronics for several decades. Nowadays, hybrid pumping seems a promising compromise where the organic material is optically pumped by an electrically pumped inorganic device on chip. This technical solution requires therefore an optimization of the organic gain medium under optical pumping. Here, we report a detailed study of gain features of dye-doped polymer thin films, in particular we introduce the gain efficiency $K$, in order to facilitate comparison between material and experimental conditions. First, we measure the bulk gain by the means of a pump-probe setup, and then present in details several factors which modify the actual gain of the layer, namely the confinement factor, the pump polarization, the molecular anisotropy, and the re-absorption. The usual model to evaluate the gain leads to an overestimation by more than one order of magnitude, which stresses the importance to design the devices accordin...

Gozhyk, I; Rabbani, H; Djellali, N; Forget, S; Chenais, S; Ulysse, C; Brosseau, A; Gauvin, S; Zyss, J; Lebental, M

2014-01-01T23:59:59.000Z

386

Room-temperature magnetoelectric multiferroic thin films and applications thereof  

DOE Patents [OSTI]

The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe.sub.0.67W.sub.0.33O.sub.3).sub.x (PbZr.sub.0.53Ti.sub.0.47O.sub.3).sub.1-x (0.2.ltoreq.x.ltoreq.0.8) (PFW.sub.x-PZT.sub.1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.

Katiyar, Ram S; Kuman, Ashok; Scott, James F.

2014-08-12T23:59:59.000Z

387

Order on disorder: Copper phthalocyanine thin films on technical substrates  

SciTech Connect (OSTI)

We have studied the molecular orientation of the commonly used organic semiconductor copper phthalocyanine (CuPC) grown as thin films on the technically relevant substrates indium tin oxide, oxidized Si, and polycrystalline gold using polarization-dependent x-ray absorption spectroscopy, and compare the results with those obtained from single crystalline substrates [Au(110) and GeS(001)]. Surprisingly, the 20{endash}50 nm thick CuPC films on the technical substrates are as highly ordered as on the single crystals. Importantly, however, the molecular orientation in the two cases is radically different: the CuPC molecules stand on the technical substrates and lie on the single crystalline substrates. The reasons for this and its consequences for our understanding of the behavior of CuPC films in devices are discussed. {copyright} 2001 American Institute of Physics.

Peisert, H.; Schwieger, T.; Auerhammer, J. M.; Knupfer, M.; Golden, M. S.; Fink, J.; Bressler, P. R.; Mast, M.

2001-07-01T23:59:59.000Z

388

Improvement in electrochromic stability of electrodeposited nickel hydroxide thin film  

SciTech Connect (OSTI)

The electrochromic nickel hydroxide thin film was anodically deposited from an aqueous solution. The effect of solution temperature, postheat-treatment temperature, and addition of cadmium on the electrochromic behavior (color/bleach durability cycle, response time, and coloration efficiency of the nickel hydroxide films in NaOH) were investigated. A significant increase in the color/bleach durability cycle from 500 (for the as-deposited film) to more than 5000 cycles (for the heat-treated film) was observed. The addition of cadmium increased the utilization of the active materials. It was found that the coloration efficiency was 40 cm{sup 2}/C and coloration and bleaching response time were 20 to 30 s and 8 to 10 s, respectively. The change in the electrochromic properties with heat-treatment temperature is discussed based on the physical and electrochemical analysis.

Natarajan, C.; Matsumoto, H.; Nogami, G. [Kyushu Inst. of Tech., Kitakyushu (Japan). Dept. of Electrical Engineering

1997-01-01T23:59:59.000Z

389

Long-laser-pulse method of producing thin films  

DOE Patents [OSTI]

A method of depositing thin films by means of laser vaporization employs a long-pulse laser (Nd-glass of about one millisecond duration) with a peak power density typically in the range 10.sup.5 -10.sup.6 W/cm.sup.2. The method may be used to produce high T.sub.c superconducting films of perovskite material. In one embodiment, a few hundred nanometers thick film of YBa.sub.2 Cu.sub.3 O.sub.7-x is produced on a SrTiO.sub.3 crystal substrate in one or two pulses. In situ-recrystallization and post-annealing, both at elevated temperature and in the presence of an oxidizing agen The invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California.

Balooch, Mehdi (Berkeley, CA); Olander, Donald K. (Berkeley, CA); Russo, Richard E. (Walnut Creek, CA)

1991-01-01T23:59:59.000Z

390

Generation of mirage effect by heated carbon nanotube thin film  

SciTech Connect (OSTI)

Mirage effect, a common phenomenon in nature, is a naturally occurring optical phenomenon in which lights are bent due to the gradient variation of refraction in the temperature gradient medium. The theoretical analysis of mirage effect generated by heated carbon nanotube thin film is presented both for gas and liquid. Excellent agreement is demonstrated through comparing the theoretical prediction with published experimental results. It is concluded from the theoretical prediction and experimental observation that the mirage effect is more likely to happen in liquid. The phase of deflected optical beam is also discussed and the method for measurement of thermal diffusivity of medium is theoretically verified. Furthermore, a method for measuring the refractive index of gas by detecting optical beam deflection is also presented in this paper.

Tong, L. H. [Department of Modern Mechanics, University of Science and Technology of China, Hefei, Anhui 230026 (China); USTC-CityU Joint Advanced Research Centre, Suzhou, Jiangsu 215123 (China); Lim, C. W., E-mail: bccwlim@cityu.edu.hk [USTC-CityU Joint Advanced Research Centre, Suzhou, Jiangsu 215123 (China); Department of Civil and Architectural Engineering, City University of Hong Kong, Kowloon, Hong Kong, People’s Republic of China and City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057 (China); Li, Y. C. [Department of Modern Mechanics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Zhang, Chuanzeng; Quoc Bui, Tinh [Department of Civil Engineering, University of Siegen, Paul-Bonatz-Str. 9-11, D-57076 Siegen (Germany)

2014-06-28T23:59:59.000Z

391

Monitoring plasma treatment of thin films by surface plasmon resonance  

SciTech Connect (OSTI)

We report the surface plasmon resonance (SPR) measurements during plasma treatment of thin films by an indigenously designed setup. From the measurements on Al (6.3 nm)/Ag (38 nm) bi-layer at a pressure of 0.02 mbar, the SPR position was found to be shifted by ?20° after a plasma treatment of ?7 h. The formation of oxide layers during plasma oxidation was confirmed by glancing angle x-ray diffraction (GXRD) measurements. Combined analysis of GXRD and SPR data confirmed that while top Al layer enables controlling plasma oxidation of Ag, the setup enables monitoring the same. The setup designed is a first of its kind for in situ SPR studies where creation of low pressure is a prerequisite.

Laha, Ranjit, E-mail: laharanjit@gmail.com [Department of Physics, National Institute of Technology Raipur, 492010 Raipur (India)] [Department of Physics, National Institute of Technology Raipur, 492010 Raipur (India); Manivannan, A. [US Department of Energy, National Energy Technology Laboratory, Morgantown, West Virginia 26507 (United States)] [US Department of Energy, National Energy Technology Laboratory, Morgantown, West Virginia 26507 (United States); Kasiviswanathan, S. [Department of Physics, Indian Institute of Technology Madras, 600036 Chennai (India)] [Department of Physics, Indian Institute of Technology Madras, 600036 Chennai (India)

2014-03-15T23:59:59.000Z

392

Equiatomic CoPt thin films with extremely high coercivity  

SciTech Connect (OSTI)

In this paper, magnetic and structural properties of near-equiatomic CoPt thin films, which exhibited a high coercivity in the film-normal direction—suitable for perpendicular magnetic recording media applications—are reported. The films exhibited a larger coercivity of about 6.5 kOe at 8?nm. The coercivity showed a monotonous decrease as the film thickness was increased. The transmission electron microscopy images indicated that the as fabricated CoPt film generally consists of a stack of magnetically hard hexagonal-close-packed phase, followed by stacking faults and face-centred-cubic phase. The thickness dependent magnetic properties are explained on the basis of exchange-coupled composite media. Epitaxial growth on Ru layers is a possible factor leading to the unusual observation of magnetically hard hcp-phase at high concentrations of Pt.

Varghese, Binni; Piramanayagam, S. N., E-mail: Prem-SN@dsi.a-star.edu.sg; Yang, Yi; Kai Wong, Seng; Khume Tan, Hang; Kiat Lee, Wee [Data Storage Institute, (A-STAR) Agency for Science, Technology and Research, DSI Building, 5, Engineering Drive 1, Singapore 117608 (Singapore); Okamoto, Iwao [Western Digital Corporation, Singapore 638552 (Singapore)

2014-05-07T23:59:59.000Z

393

Absorption of surface acoustic waves by topological insulator thin films  

SciTech Connect (OSTI)

We present a theoretical study on the absorption of the surface acoustic waves (SAWs) by Dirac electrons in topological insulator (TI) thin films (TITFs). We find that due to momentum and energy conservation laws, the absorption of the SAWs in TITFs can only be achieved via intra-band electronic transitions. The strong absorption can be observed up to sub-terahertz frequencies. With increasing temperature, the absorption intensity increases significantly and the cut-off frequency is blue-shifted. More interestingly, we find that the absorption of the SAWs by the TITFs can be markedly enhanced by the tunable subgap in the Dirac energy spectrum of the TI surface states. Such a subgap is absent in conventional two-dimensional electron gases (2DEGs) and in the gapless Dirac 2DEG such as graphene. This study is pertinent to the exploration of the acoustic properties of TIs and to potential application of TIs as tunable SAW devices working at hypersonic frequencies.

Li, L. L., E-mail: lllihfcas@foxmail.com [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Xu, W., E-mail: wenxu-issp@aliyun.com [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Department of Physics, Yunnan University, Kunming 650091 (China)

2014-08-11T23:59:59.000Z

394

Casimir effect for thin films from imperfect materials  

E-Print Network [OSTI]

We propose an approach for investigation of interaction of thin material films with quantum electrodynamic fields. Using main principles of quantum electrodynamics (locality, gauge invariance, renormalizability) we construct a single model for Casimir-like phenomena arising near the film boundary on distances much larger then Compton wavelength of the electron where fluctuations of Dirac fields are not essential. In this model the thin film is presented by a singular background field concentrated on a 2-dimensional surface. All properties of the film material are described by one dimensionless parameter. For two parallel plane films we calculate the photon propagator and the Casimir force, which appears to be dependent on film material and can be both attractive and repulsive. We consider also an interaction of plane film with point charge and straight line current. Here, besides usual results of classical electrodynamics the model predicts appearance of anomalous electric and magnetic fields.

V. N. Markov; Yu. M. Pis'mak

2006-06-04T23:59:59.000Z

395

Properties of ferroelectric/ferromagnetic thin film heterostructures  

SciTech Connect (OSTI)

Ferroelectric/ferromagnetic thin film heterostructures, SrBi{sub 2}Ta{sub 2}O{sub 9}/BaFe{sub 12}O{sub 19} (SBT/BaM), were grown on platinum-coated Si substrates using metal-organic decomposition. X-ray diffraction patterns confirmed that the heterostructures contain only SBT and BaM phases. The microwave properties of these heterostructures were studied using a broadband ferromagnetic resonance (FMR) spectrometer from 35 to 60 GHz, which allowed us to determine gyromagnetic ratio and effective anisotropy field. The FMR linewidth is as low as140 Oe at 58 GHz. In addition, measurements of the effective permittivity of the heterostructures were carried out as a function of bias electric field. All heterostructures exhibit hysteretic behavior of the effective permittivity. These properties indicate that such heterostructures have potential for application in dual electric and magnetic field tunable resonators, filters, and phase shifters.

Chen, Daming, E-mail: chendaming1986@gmail.com [Center for Magnetism and Magnetic Nanostructures, University of Colorado Colorado Springs, 1420 Austin Bluffs Pkwy, Colorado Springs, Colorado 80918 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054 Sichuan (China); Harward, Ian; Linderman, Katie; Economou, Evangelos; Celinski, Zbigniew [Center for Magnetism and Magnetic Nanostructures, University of Colorado Colorado Springs, 1420 Austin Bluffs Pkwy, Colorado Springs, Colorado 80918 (United States); Nie, Yan [Center for Magnetism and Magnetic Nanostructures, University of Colorado Colorado Springs, 1420 Austin Bluffs Pkwy, Colorado Springs, Colorado 80918 (United States); School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei 430074 (China)

2014-05-07T23:59:59.000Z

396

Manipulating Josephson junctions in thin-films by nearby vortices  

SciTech Connect (OSTI)

It is shown that a vortex trapped in one of the banks of a planar edge-type Josephson junction in a narrow thin-film superconducting strip can change drastically the dependence of the junction critical current on the applied field, I-c(H). When the vortex is placed at certain discrete positions in the strip middle, the pattern I-c(H) has zero at H = 0 instead of the traditional maximum of '0-type' junctions. The number of these positions is equal to the number of vortices trapped at the same location. When the junction-vortex separation exceeds similar to W, the strip width, I-c(H) is no longer sensitive to the vortex presence. The same is true for any separation if the vortex approaches the strip edges. (C) 2014 Elsevier B.V. All rights reserved.

Kogan, V.G.; Mints, R.G.

2014-07-01T23:59:59.000Z

397

Isothermal dehydration of thin films of water and sugar solutions  

SciTech Connect (OSTI)

The process of quasi-isothermal dehydration of thin films of pure water and aqueous sugar solutions is investigated with a dual experimental and theoretical approach. A nanoporous paper disk with a homogeneous internal structure was used as a substrate. This experimental set-up makes it possible to gather thermodynamic data under well-defined conditions, develop a numerical model, and extract needed information about the dehydration process, in particular the water activity. It is found that the temperature evolution of the pure water film is not strictly isothermal during the drying process, possibly due to the influence of water diffusion through the cellulose web of the substrate. The role of sugar is clearly detectable and its influence on the dehydration process can be identified. At the end of the drying process, trehalose molecules slow down the diffusion of water molecules through the substrate in a more pronounced way than do the glucose molecules.

Heyd, R. [Centre de Recherche sur la Matière Divisée, University of Orleans and CNRS, rue de la Férollerie 1B, 45071 Orléans Cedex 2 (France)] [Centre de Recherche sur la Matière Divisée, University of Orleans and CNRS, rue de la Férollerie 1B, 45071 Orléans Cedex 2 (France); Rampino, A. [Centre de Recherche sur la Matière Divisée, University of Orleans and CNRS, rue de la Férollerie 1B, 45071 Orléans Cedex 2 (France) [Centre de Recherche sur la Matière Divisée, University of Orleans and CNRS, rue de la Férollerie 1B, 45071 Orléans Cedex 2 (France); Laboratory of Physical and Macromolecular Chemistry, University of Trieste, Via Giorgieri 1, 34127 Trieste (Italy); Bellich, B.; Elisei, E. [Laboratory of Physical and Macromolecular Chemistry, University of Trieste, Via Giorgieri 1, 34127 Trieste (Italy)] [Laboratory of Physical and Macromolecular Chemistry, University of Trieste, Via Giorgieri 1, 34127 Trieste (Italy); Cesàro, A. [Laboratory of Physical and Macromolecular Chemistry, University of Trieste, Via Giorgieri 1, 34127 Trieste (Italy) [Laboratory of Physical and Macromolecular Chemistry, University of Trieste, Via Giorgieri 1, 34127 Trieste (Italy); Elettra Sincrotrone Trieste, Area Science Park, I-34149 Trieste (Italy); Saboungi, M.-L. [Centre de Recherche sur la Matière Divisée, University of Orleans and CNRS, rue de la Férollerie 1B, 45071 Orléans Cedex 2 (France) [Centre de Recherche sur la Matière Divisée, University of Orleans and CNRS, rue de la Férollerie 1B, 45071 Orléans Cedex 2 (France); Institut de Minéralogie, de Physique des Matériaux, et de Cosmochimie (IMPMC), Sorbonne Univ-UPMC, Univ Paris 06, UMR CNRS 7590, Museum National d’Histoire Naturelle, IRD UMR 206, 4 Place Jussieu, F-75005 Paris (France)

2014-03-28T23:59:59.000Z

398

Photoconductivity in reactively evaporated copper indium selenide thin films  

SciTech Connect (OSTI)

Copper indium selenide thin films of composition CuInSe{sub 2} with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10{sup ?5} mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe{sub 2} films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (?) of 10{sup 6} cm{sup ?1} at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe{sub 2} thin films indicate its suitability in photovoltaic applications.

Urmila, K. S., E-mail: urmilaks7@gmail.com; Asokan, T. Namitha, E-mail: urmilaks7@gmail.com; Pradeep, B., E-mail: urmilaks7@gmail.com [Solid State Physics Laboratory, Cochin University of Science and Technology, Kochi, Kerala (India); Jacob, Rajani; Philip, Rachel Reena [Thin Film Research Laboratory, Union Christian College, Aluva, Kerala (India)

2014-01-28T23:59:59.000Z

399

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof  

DOE Patents [OSTI]

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Perkins, John (Boulder, CO); Van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); Ginley, David (Evergreen, CO); Taylor, Matthew (Golden, CO); Neuman, George A. (Holland, MI); Luten, Henry A. (Holland, MI); Forgette, Jeffrey A. (Hudsonville, MI); Anderson, John S. (Holland, MI)

2010-07-13T23:59:59.000Z

400

Silicon-integrated thin-film structure for electro-optic applications  

DOE Patents [OSTI]

A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

McKee, Rodney A. (Kingston, TN); Walker, Frederick Joseph (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

High-field magnets using high-critical-temperature superconducting thin films  

DOE Patents [OSTI]

High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla are disclosed. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field. 4 figures.

Mitlitsky, F.; Hoard, R.W.

1994-05-10T23:59:59.000Z

402

High-field magnets using high-critical-temperature superconducting thin films  

DOE Patents [OSTI]

High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field.

Mitlitsky, Fred (Livermore, CA); Hoard, Ronald W. (Livermore, CA)

1994-01-01T23:59:59.000Z

403

Notes 08. Turbulence flow in thin film bearings : Characteristics and Modeling  

E-Print Network [OSTI]

NOTES 8. TURBULENCE IN THIN FILM FLOWS. Dr. Luis San Andr?s ? 2009 1 Notes 8. Turbulence in Thin Film Flows Notes 8 detail the characteristics of turbulent flows and provide insight into the flow instabilities that precede transition from a... for averaging of turbulent flow velocities [s] NOTES 8. TURBULENCE IN THIN FILM FLOWS. Dr. Luis San Andr?s ? 2009 2 Ta 2 Re C R ?? ?? ?? . Taylor number ?? 1, 2, 3 i i u ? Components of velocity field [m/s] = ? ? ii uu?? ?? 1, 2, 3 , ii i uu...

San Andres, Luis

2009-01-01T23:59:59.000Z

404

E-Print Network 3.0 - alloys thin films Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

au no 12, Tome 49, decembre 1988 Summary: film are not enough to use for thin film magnetic recording head 2, 31. On the other hand... that intermedi- ate alloy layer is...

405

E-Print Network 3.0 - au thin films Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

nanoparticle assembly during dewetting and sublimation of a solid thin film. Metal... and surface tension causes hole spreading and film breakup. For Au on Xe we show that, as for...

406

Transparent and Conductive Carbon Nanotube Multilayer Thin Films Suitable as an Indium Tin Oxide Replacement  

E-Print Network [OSTI]

Transparent electrodes made from metal oxides suffer from poor flexibility and durability. Highly transparent and electrically conductive thin films based on carbon nanotubes (CNTs) were assembled as a potential indium tin oxide (ITO) replacement...

Park, Yong Tae

2012-07-16T23:59:59.000Z

407

Ion Beam Deposition of Thin Films: Growth Processes and Nanostructure Formation  

SciTech Connect (OSTI)

Ion beam deposition is a process far from thermodynamic equilibrium and is in particular suited to grow metastable thin films with diamond-like properties, such as tetrahedral amorphous carbon (ta-C) and cubic boron nitride (c-BN). In this contribution the atomistic description of the deposition and growth processes are reviewed and compared to experimental results, obtained from mass selected ion beam deposition. The focus will be set to the nucleation and growth processes of boron nitride as a model system for ion based thin film formation. Furthermore, recent examples for nanostructure formation in ion deposited compound thin films will be presented. Ion beam deposited metal-carbon nano-composite thin films exhibit a variety of different morphologies such as rather homogeneous nanocluster distributions embedded in an a-C matrix, but also the self-organized formation of nanoscale multilayer structures.

Hofsaess, Hans C. [II. Physikalisches Institut, Universitaet Goettingen, Friedrich-Hund-Platz 1, D-37077 Goettingen (Germany)

2004-12-01T23:59:59.000Z

408

Polymeric precursor derived nanocrystalline ZnO thin films using EDTA as chelating agent  

E-Print Network [OSTI]

properties, ZnO has plausible electro-optical applications, such as, solar cells [1, 2], light- emitting diodes [3, 4], UV lasers [5], thin film transistors [6,7], and UV photodetectors [8]. Besides

Mohanty, Saraju P.

409

Bi-Sr-Ca-Cu-O thin films grown by flash evaporation and pulsed laser deposition  

E-Print Network [OSTI]

-phase 2212 films were grown on a MgO substrate using the pulsed laser deposition technique from commercially available 2212 powder. The effect of annealing on the thin films was also studied....

Ganapathy Subramanian, Santhana

2004-09-30T23:59:59.000Z

410

Structure-property Relationships in Pure and Doped Epitaxial Tungsten Trioxide Thin Films  

E-Print Network [OSTI]

Structure-property Relationships in Pure and Doped Epitaxial Tungsten Trioxide Thin Films Principal-property relationships of well- defined epitaxial tungsten trioxide (WO3) films with and without dopants, and thereby

411

Solid state thin film battery having a high temperature lithium alloy anode  

DOE Patents [OSTI]

An improved rechargeable thin-film lithium battery involves the provision of a higher melting temperature lithium anode. Lithium is alloyed with a suitable solute element to elevate the melting point of the anode to withstand moderately elevated temperatures.

Hobson, David O. (Oak Ridge, TN)

1998-01-01T23:59:59.000Z

412

Strain engineered barium strontium titanate for tunable thin film resonators H. Khassaf,1  

E-Print Network [OSTI]

Strain engineered barium strontium titanate for tunable thin film resonators H. Khassaf,1 N of epitaxial (001) barium strontium titanate (BST) films are computed as functions of composition, misfit

Alpay, S. Pamir

413

Impurity and back contact effects on CdTe/CdS thin film solar cells.  

E-Print Network [OSTI]

??CdTe/CdS thin film solar cells are the most promising cost-effective solar cells. The goal of this project is to improve the performance for CdS/CdTe devices… (more)

Zhao, Hehong

2008-01-01T23:59:59.000Z

414

Solid-state dewetting of continuous and patterned single crystal Ni thin films  

E-Print Network [OSTI]

Solid-state dewetting of thin films is a process through which continuous solid films agglomerate to form islands. This process is driven by capillary forces, often occurring via surface self-diffusion. Solid-state dewetting ...

Ye, Jongpil

2011-01-01T23:59:59.000Z

415

Antimicrobial Activity of Cationic Antiseptics in Layer-by-Layer Thin Film Assemblies  

E-Print Network [OSTI]

Layer-by-layer (LbL) assembly has proven to be a powerful technique for assembling thin films with a variety of properties including electrochromic, molecular sensing, oxygen barrier, and antimicrobial. LbL involves the deposition of alternating...

Dvoracek, Charlene M.

2010-07-14T23:59:59.000Z

416

Micro/nano devices fabricated from Cu-Hf thin films  

DOE Patents [OSTI]

An all-metal microdevice or nanodevice such as an atomic force microscope probe is manufactured from a copper-hafnium alloy thin film having an x-ray amorphous microstructure.

Luber, Erik J; Ophus, Colin; Mitlin, David; Olsen, Brian; Harrower, Christopher; Radmilovi, Velimir

2013-06-04T23:59:59.000Z

417

Analysis of potential applications for the templated dewetting of metal thin films  

E-Print Network [OSTI]

Thin films have a high surface-to-volume ratio and are therefore usually morphologically unstable. They tend to reduce their surface energy through transport of mass by diffusion. As a result, they decay into a collection ...

Frantzeskakis, Emmanouil

2005-01-01T23:59:59.000Z

418

Chemical vapor deposition of conjugated polymeric thin films for photonic and electronic applications  

E-Print Network [OSTI]

(cont.) Conjugated polymers have delocalized electrons along the backbone, facilitating electrical conductivity. As thin films, they are integral to organic semiconductor devices emerging in the marketplace, such as flexible ...

Lock, John P

2005-01-01T23:59:59.000Z

419

Layer-by-Layer Assembly of a pH-Responsive and Electrochromic Thin Film  

E-Print Network [OSTI]

This article summarizes an experiment on thin-film fabrication with layer-by-layer assembly that is appropriate for undergraduate laboratory courses. The purpose of this experiment is to teach students about self-assembly ...

Schmidt, Daniel J.

420

Metallic to insulating transition in disordered pulsed laser deposited silicide thin films.  

E-Print Network [OSTI]

??A metal-to-insulating transition has been observed in iron, iron oxide, iron silicide and cobalt silicide thin films when deposited on Si substrate with a native… (more)

Abou Mourad, Houssam

2005-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Lateral heterojunction photodetector consisting of molecular organic and colloidal quantum dot thin films  

E-Print Network [OSTI]

exception being the dye- sensitized solar cell.3 Owing to its unique geometry, the present device also and that is sensitized across visible wavelengths by a thin film of colloidal CdSe nanocrystal quantum dots QDs . High

422

Thin film lithium-based batteries and electrochromic devices fabricated with nanocomposite electrode materials  

DOE Patents [OSTI]

Thin-film lithium-based batteries and electrochromic devices (10) are fabricated with positive electrodes (12) comprising a nanocomposite material composed of lithiated metal oxide nanoparticles (40) dispersed in a matrix composed of lithium tungsten oxide.

Gillaspie, Dane T; Lee, Se-Hee; Tracy, C. Edwin; Pitts, John Roland

2014-02-04T23:59:59.000Z

423

Anti-reflection zinc oxide nanocones for higher efficiency thin-film silicon solar cells  

E-Print Network [OSTI]

Thin film silicon solar cells, which are commonly made from microcrystalline silicon ([mu]c-Si) or amorphous silicon (a-Si), have been considered inexpensive alternatives to thick polycrystalline silicon (polysilicon) solar ...

Mailoa, Jonathan P

2012-01-01T23:59:59.000Z

424

Earth abundant materials for high efficiency heterojunction thin film solar cells  

E-Print Network [OSTI]

We investigate earth abundant materials for thin-film solar cells that can meet tens of terawatts level deployment potential. Candidate materials are identified by combinatorial search, large-scale electronic structure ...

Buonassisi, Tonio

425

Chemical vapor deposition thin films as biopassivation coatings and directly patternable dielectrics  

E-Print Network [OSTI]

Organosilicon thin films deposited by pulsed plasma-enhanced chemical vapor deposition (PPECVD) and hot-filament chemical vapor deposition (HFCVD) were investigated as potential biopassivation coatings for neural probes. ...

Pryce Lewis, Hilton G. (Hilton Gavin), 1973-

2001-01-01T23:59:59.000Z

426

Efficient Föster energy transfer : from phosphorescent organic molecules to J-aggregate thin film  

E-Print Network [OSTI]

This thesis demonstrates the first ever use of Forster resonance energy transfer (FRET) to increase the quantum efficiency of a electrically pumped J-aggregate light emitting device (JLED). J-aggregate thin films are highly ...

Shirasaki, Yasuhiro

2008-01-01T23:59:59.000Z

427

Integration of pentacene-based thin film transistors via photolithography for low and high voltage applications  

E-Print Network [OSTI]

An organic thin film transistor (OTFT) technology platform has been developed for flexible integrated circuits applications. OTFT performance is tuned by engineering the dielectric constant of the gate insulator and the ...

Smith, Melissa Alyson

2012-01-01T23:59:59.000Z

428

Apparatus for making cathodo- and photo- luminescent measurements of thin film phosphors  

E-Print Network [OSTI]

the understanding of the thin film phosphor, tungsten doped zinc oxide. Principally, a vacuum system is constructed and provides for both photo-and cathode-phosphor excitations. A measurement capability is then included. Finally, additions are mentioned...

Babuchna, Paul Michael

1998-01-01T23:59:59.000Z

429

Femtosecond pump-probe studies of reduced graphene oxide thin films  

E-Print Network [OSTI]

The dynamics of photocarriers in reduced graphene oxide thin films is studied by using ultrafast pump-probe spectroscopy. Time dependent differential transmissions are measured with sample temperatures ranging from 9 to 300 K. At each sample...

Ruzicka, Brian Andrew; Werake, Lalani Kumari; Zhao, Hui; Wang, Shuai; Loh, Kian Ping

2010-04-01T23:59:59.000Z

430

Organic-inorganic nanocomposite membranes from highly ordered mesoporous thin films for solubility-based separations  

E-Print Network [OSTI]

properties. In this study, we synthesized the organic-inorganic nanocomposite membranes by decorating the surfaces of commercially available mesoporous alumina substrates, and surfactant-templated highly ordered mesoporous silicate thin films placed...

Yoo, Suk Joon

2009-05-15T23:59:59.000Z

431

Evaluation on the thin-film phase change material-based technologies  

E-Print Network [OSTI]

Two potential applications of thin film phase-change materials are considered, non-volatile electronic memories and MEMS (Micro-Electro-Mechanical Systems) actuators. The markets for those two applications are fast growing ...

Guo, Qiang, M. Eng. Massachusetts Institute of Technology

2006-01-01T23:59:59.000Z

432

Method for making surfactant-templated, high-porosity thin films  

DOE Patents [OSTI]

An evaporation-induced self-assembly method to prepare a surfactant-templated thin film by mixing a silica sol, a surfactant, and a hydrophobic polymer and then evaporating a portion of the solvent during coating onto a substrate and then heating to form a liquid-phase, thin film material with a porosity greater than approximately 50 percent. The high porosity thin films can have dielectric constants less than 2 to be suitable for applications requiring low-dielectric constants. An interstitial compound can be added to the mixture, with the interstitial compound either covalently bonded to the pores or physically entrapped within the porous structure. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (San Jose, CA); Fan, Hongyou (Albuquerque, NM)

2001-01-01T23:59:59.000Z

433

Thermal Conductivity of Ordered Mesoporous Nanocrystalline Silicon Thin Films Made from Magnesium Reduction of Polymer-  

E-Print Network [OSTI]

Thermal Conductivity of Ordered Mesoporous Nanocrystalline Silicon Thin Films Made from Magnesium-assembly of mesoporous silica followed by magnesium reduction. The periodic ordering of pores in mesoporous silicon

Pilon, Laurent

434

Technological assessment of light-trapping technology for thin-film Si solar cell  

E-Print Network [OSTI]

The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was analyzed from the technology, market, and ...

Susantyoko, Rahmat Agung

2009-01-01T23:59:59.000Z

435

Thin Film Solar Cells with Light Trapping Transparent Conducting Oxide Layer  

E-Print Network [OSTI]

Thin film solar cells, if film thickness is thinner than the optical absorption length, typically give lower cell performance. For the thinner structure, electric current loss due to light penetration can offset the electric current gain obtained...

Lu, Tianlin

2012-07-16T23:59:59.000Z

436

Integrated photonic structures for light trapping in thin-film Si solar cells  

E-Print Network [OSTI]

We explore the mechanisms for an efficient light trapping structure for thin-film silicon solar cells. The design combines a distributed Bragg reflector (DBR) and periodic gratings. Using photonic band theories and numerical ...

Sheng, Xing

437

MELT-MEDIATED LASER CRYSTALLIZATION OF THIN FILM NITI SHAPE MEMORY ALLOYS  

E-Print Network [OSTI]

matrix displays (e.g. LCD and OLED) as well as the active medium in thin film solar cells [4 of furnace, solid phase crystallization parameters (i.e. annealing temperature and dwell time

Yao, Y. Lawrence

438

Structural, optical and photocatalytic properties of ZnO thin films and  

E-Print Network [OSTI]

emitting diodes, gas sensors and transparent conducting thin films for solar cells. In this work, Zn an electronic furnace. Fig. 1. Grain size (black) and RMS variations (blue) of 1-6 layered ZnO films vs

439

Near-infrared photodetector consisting of J-aggregating cyanine dye and metal oxide thin films  

E-Print Network [OSTI]

We demonstrate a near-infrared photodetector that consists of a thin film of the J-aggregating cyanine dye, U3, and transparent metal-oxide charge transport layers. The high absorption coefficient of the U3 film, combined ...

Osedach, Timothy P.

440

anti-reflective thin film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mailoa, Jonathan P 2012-01-01 3 Technological assessment of light-trapping technology for thin-film Si solar cell MIT - DSpace Summary: The proposed light trapping technology of...

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

amorphous-silicon-based thin-film photovoltaic: Topics by E-print...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

devices have been obtained by a direct polymerization of undoped (or p-type doped) thin film (CH)x layer onto a polycrystalline cadmium sulfide film Paris-Sud XI, Universit...

442

Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering  

E-Print Network [OSTI]

Cuprous oxide (Cu[subscript 2]O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu[subscript 2]O thin films deposited by reactive dc magnetron ...

Lee, Yun Seog

443

ag sn thin-film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

by x-ray diffractogram. The deposition parameters were optimized to obtain good quality thin films. The film deposited with 10.0ml TEA showed good uniformity, good surface...

444

Defect engineering of cuprous oxide thin-films for photovoltaic applications  

E-Print Network [OSTI]

Thin-film solar cells are promising for renewable-energy applications due to their low material usage and inexpensive manufacturing potential, making them compatible with terawatts-level deployment. Cuprous oxide (Cu?O) ...

Lee, Yun Seog

2013-01-01T23:59:59.000Z

445

Scanning tunneling microscopic studies of SiO2 thin film supported metal nano-clusters  

E-Print Network [OSTI]

This dissertation is focused on understanding heterogeneous metal catalysts supported on oxides using a model catalyst system of SiO2 thin film supported metal nano-clusters. The primary technique applied to this study is scanning tunneling...

Min, Byoung Koun

2005-11-01T23:59:59.000Z

446

Design and modeling of a PZT thin film based piezoelectric micromachined ultrasonic transducer (PMUT)  

E-Print Network [OSTI]

The design and modelling framework for a piezoelectric micromachined ultrasonic transducer (PMUT) based on the piezoelectric thin film deposition of lead zirconate titanate (PZT) is defined. Through high frequency vibration ...

Smyth, Katherine Marie

2012-01-01T23:59:59.000Z

447

Nanoindentation of Silicate Low-K Dielectric Thin Films Joseph B. Vella1  

E-Print Network [OSTI]

Nanoindentation of Silicate Low-K Dielectric Thin Films Joseph B. Vella1 , Alex A. Volinsky1, Minneapolis, MN. ABSTRACT The capabilities of nanoindentation to characterize low-k organo silicate glass (OSG

Volinsky, Alex A.

448

Processing and properties of ytterbium-erbium silicate thin film gain media  

E-Print Network [OSTI]

The structural and photoluminescence properties of ytterbium-erbium silicate thin films have been investigated. The films were fabricated by RF-magnetron co-sputtering of Er[subscript 2]O[subscript 3], Yb[subscript ...

Kimerling, Lionel C.

449

Role of Polycrystalline Thin-Film PV Technologies in Competitive PV Module Markets: Preprint  

SciTech Connect (OSTI)

This paper discusses the developments in thin-film PV technologies and provides an outlook on future commercial module efficiencies achievable based on today's knowledge about champion cell performance.

von Roedern, B.; Ullal, H. S.

2008-05-01T23:59:59.000Z

450

Thick and Thin Film Polymer CNT Nanocomposites for Thermoelectric Energy Conversion and Transparent Electrodes  

E-Print Network [OSTI]

Thick and Thin Film Polymer ­ CNT Nanocomposites for Thermoelectric Energy Conversion gradient. Thermoelectric materials harvest electricity from waste heat or any temperature gradient]. The PDDA/(SWNT+DOC) system produced transparent (> 82% visible light transmittance) and electrically

Fisher, Frank

451

Annual report, April 1981 - May 1982 : laser induced deposition of thin films  

E-Print Network [OSTI]

A new chemical vapor deposition (CVD) process has been demonstrated with Si thin films. In this process, reactant gases are heated by absorbing light energy emitted from an IR laser. No other surfaces are heated by the ...

Gattuso, Todd Richard

1982-01-01T23:59:59.000Z

452

An ultrahigh vacuum facility for the co-deposition of amorphous transition metal alloy thin films  

E-Print Network [OSTI]

AN ULTRAHIGH VACUUM FACILITY FOR THE CO-DEPOSITION OF AMORPHOUS TRANSITION METAL ALLOY THIN FILMS A Thesis by VICTOR MICHAEL NICOLI Submitted to the Graduate College of Texas ASM University in partial fulfillment of the requirements... for the degree of MASTER OF SCIENCE May 1984 Major Subject: Physics AN ULTRAHIGH VACUUM FACILITY FOR THE CO-DEPOSITION OF AMORPHOUS TRANSITION METAL ALLOY THIN FILMS A Thes1s by VICTOR MICHAEL NICOLI Approved as to style and content by: ona . aug (Cha...

Nicoli, Victor Michael

1984-01-01T23:59:59.000Z

453

Metal-semiconductor hybrid thin films in field-effect transistors  

SciTech Connect (OSTI)

Metal-semiconductor hybrid thin films consisting of an amorphous oxide semiconductor and a number of aluminum dots in different diameters and arrangements are formed by electron beam lithography and employed for thin-film transistors (TFTs). Experimental and computational demonstrations systematically reveal that the field-effect mobility of the TFTs enhances but levels off as the dot density increases, which originates from variations of the effective channel length that strongly depends on the electric field distribution in a transistor channel.

Okamura, Koshi, E-mail: koshi.okamura@kit.edu; Dehm, Simone [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany)] [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany); Hahn, Horst [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany) [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany); KIT-TUD Joint Research Laboratory Nanomaterials, Technische Universität Darmstadt, Petersenstr. 32, 64287 Darmstadt (Germany)

2013-12-16T23:59:59.000Z

454

Preparation of CIGS-based solar cells using a buffered electrodeposition bath  

DOE Patents [OSTI]

A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

Bhattacharya, Raghu Nath (Littleton, CO)

2007-11-20T23:59:59.000Z

455

Free-Space Time-Domain Method for Measuring Thin Film Dielectric Properties  

DOE Patents [OSTI]

A non-contact method for determining the index of refraction or dielectric constant of a thin film on a substrate at a desired frequency in the GHz to THz range having a corresponding wavelength larger than the thickness of the thin film (which may be only a few microns). The method comprises impinging the desired-frequency beam in free space upon the thin film on the substrate and measuring the measured phase change and the measured field reflectance from the reflected beam for a plurality of incident angles over a range of angles that includes the Brewster's angle for the thin film. The index of refraction for the thin film is determined by applying Fresnel equations to iteratively calculate a calculated phase change and a calculated field reflectance at each of the plurality of incident angles, and selecting the index of refraction that provides the best mathematical curve fit with both the dataset of measured phase changes and the dataset of measured field reflectances for each incident angle. The dielectric constant for the thin film can be calculated as the index of refraction squared.

Li, Ming; Zhang, Xi-Cheng; Cho, Gyu Cheon

2000-05-02T23:59:59.000Z

456

Method for bonding thin film thermocouples to ceramics  

DOE Patents [OSTI]

A method is provided for adhering a thin film metal thermocouple to a ceramic substrate used in an environment up to 700 degrees Centigrade, such as at a cylinder of an internal combustion engine. The method includes the steps of: depositing a thin layer of a reactive metal on a clean ceramic substrate; and depositing thin layers of platinum and a platinum-10% rhodium alloy forming the respective legs of the thermocouple on the reactive metal layer. The reactive metal layer serves as a bond coat between the thin noble metal thermocouple layers and the ceramic substrate. The thin layers of noble metal are in the range of 1-4 micrometers thick. Preferably, the ceramic substrate is selected from the group consisting of alumina and partially stabilized zirconia. Preferably, the thin layer of reactive metal is in the range of 0.015-0.030 micrometers (15-30 nanometers) thick. The preferred reactive metal is chromium. Other reactive metals may be titanium or zirconium. The thin layer of reactive metal may be deposited by sputtering in ultra high purity argon in a vacuum of approximately 2 milliTorr (0.3 Pascals).

Kreider, Kenneth G. (Potomac, MD)

1993-01-01T23:59:59.000Z

457

Hydrogen adsorption in thin films of Prussian blue analogue  

SciTech Connect (OSTI)

Quartz crystal microbalance with dissipation (QCM-D) measurement was used to investigate the kinetics of the molecular hydrogen adsorption into thin films of prussian blue analogues - Cu{sub 3}[Co(CN){sub 6}]{sub 2} at ambient conditions. Although the equilibrium adsorption seems to be independent of the thickness, the adsorption rate substantially decreases with the thickness of the films. In addition, the reversibility of H{sub 2} adsorption into the Cu{sub 3}[Co(CN){sub 6}]{sub 2} films was investigated. The results indicate that the Cu{sub 3}[Co(CN){sub 6}]{sub 2} maily interacts with H{sub 2} molecules physically. The highest H{sub 2} uptake by the Cu{sub 3}[Co(CN){sub 6}]{sub 2} films is obtained when the gas phase is stagnant inside the testing cell. However, the unusual high H{sub 2} uptake obtained from the QCM-D measurement makes us question how reliable this analytic methodology is.

Yang, Dali [Los Alamos National Laboratory; Ding, Vivian [Los Alamos National Laboratory; Luo, Junhua [Los Alamos National Laboratory; Currier, Robert P [Los Alamos National Laboratory; Obrey, Steve [Los Alamos National Laboratory; Zhao, Yusheng [Los Alamos National Laboratory

2008-01-01T23:59:59.000Z

458

Compositional depth profiling of TaCN thin films  

SciTech Connect (OSTI)

The composition profiling of thin TaCN films was studied. For the composition profile determination using x-ray photoemission spectrometry (XPS) in combination with Ar sputtering, preferential sputtering effects of N with respect to Ta and C were found to lead to inaccurate elemental concentrations. Sputter yield calculations for the given experimental conditions allowed for the correction of a part of the error, leading to fair accuracy by reference-free measurements. Further improvement of the accuracy was demonstrated by the calibration of the XPS compositions against elastic recoil detection analysis (ERDA) results. For Auger electron spectrometry (AES) in combination with Ar sputtering, accurate results required the calibration against ERDA. Both XPS and AES allowed for a reliable and accurate determination of the compositional profiles of TaCN-based thin films after calibration. Time-of-flight secondary-ion mass spectrometry was also used to assess the composition of the TaCN films. However, the analysis was hampered by large matrix effects due to small unintentional oxygen contents in the films. Energy-dispersive x-ray spectrometry is also discussed, and it is shown that an accurate reference-free measurement of the average film concentration can be achieved.

Adelmann, Christoph; Conard, Thierry; Franquet, Alexis; Brijs, Bert; Munnik, Frans; Burgess, Simon; Witters, Thomas; Meersschaut, Johan; Kittl, Jorge A.; Vandervorst, Wilfried; Van Elshocht, Sven [Imec, B-3001 Leuven (Belgium); Forschungszentrum Dresden-Rossendorf, D-01314 Dresden (Germany); Oxford Instruments NanoAnalysis, High Wycombe, HP12 3SE (United Kingdom); Imec, B-3001 Leuven (Belgium); Imec, B-3001 Leuven, Belgium and Instituut voor Kern- en Stralingsfysica, Katholieke Universiteit Leuven, B-3001 Leuven (Belgium); Imec, B-3001 Leuven (Belgium)

2012-07-15T23:59:59.000Z

459

Highly textured oxypnictide superconducting thin films on metal substrates  

SciTech Connect (OSTI)

Highly textured NdFeAs(O,F) thin films have been grown on ion beam assisted deposition-MgO/Y{sub 2}O{sub 3}/Hastelloy substrates by molecular beam epitaxy. The oxypnictide coated conductors showed a superconducting transition temperature (T{sub c}) of 43?K with a self-field critical current density (J{sub c}) of 7.0×10{sup 4}?A/cm{sup 2} at 5?K, more than 20 times higher than powder-in-tube processed SmFeAs(O,F) wires. Albeit higher T{sub c} as well as better crystalline quality than Co-doped BaFe{sub 2}As{sub 2} coated conductors, in-field J{sub c} of NdFeAs(O,F) was lower than that of Co-doped BaFe{sub 2}As{sub 2}. These results suggest that grain boundaries in oxypnictides reduce J{sub c} significantly compared to that in Co-doped BaFe{sub 2}As{sub 2} and, hence biaxial texture is necessary for high J{sub c.}.

Iida, Kazumasa, E-mail: iida@nuap.nagoya-u.ac.jp; Kurth, Fritz; Grinenko, Vadim; Hänisch, Jens [Institute for Metallic Materials, IFW Dresden, D-01171 Dresden (Germany); Chihara, Masashi; Sumiya, Naoki; Hatano, Takafumi; Ikuta, Hiroshi [Department of Crystalline Materials Science, Nagoya University, Chikusa, Nagoya 464-8603 (Japan); Ichinose, Ataru; Tsukada, Ichiro [Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196 (Japan); Matias, Vladimir [iBeam Materials, Inc., 2778A Agua Fria Street, Santa Fe, New Mexico 87507 (United States); Holzapfel, Bernhard [Institute for Technical Physics, Karlsruhe Institute of Technology, Hermann von Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany)

2014-10-27T23:59:59.000Z

460

Adhesion and Thin-Film Module Reliability: Preprint  

SciTech Connect (OSTI)

Among the infrequently measured but essential properties for thin-film (T-F) module reliability are the interlayer adhesion and cohesion within a layer. These can be cell contact layers to glass, contact layers to the semiconductor, encapsulant to cell, glass, or backsheet, etc. We use an Instron mechanical testing unit to measure peel strengths at 90{sup o} or 180{sup o} and, in some cases, a scratch and tape pull test to evaluate inter-cell layer adhesion strengths. We present peel strength data for test specimens laminated from the three T-F technologies, before and after damp heat, and in one instance at elevated temperatures. On laminated T-F cell samples, failure can occur uniformly at any one of the many interfaces, or non-uniformly across the peel area at more than one interface. Some peel strengths are << 1 N/mm. This is far below the normal Instron mechanical testing unit Instron mechanical testing unit; glass interface values of >10 N/mm. We measure a wide range of adhesion strengths and suggest that adhesion measured under higher temperature and relative humidity conditions is more relevant for module reliability.

McMahon, T. J.; Jorgensen, G. J.

2006-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Interaction of acetonitrile with thin films of solid water  

SciTech Connect (OSTI)

Thin films of water were prepared on Ag at 124 K. Their properties were studied with metastable impact electron spectroscopy, reflection absorption infrared spectroscopy, and temperature programmed desorption. The interaction of acetonitrile (ACN) with these films was studied with the abovementioned techniques. From the absence of any infrared activity in the initial adsorption stage, it is concluded that ACN adsorbs linearly and that the C{identical_to}N axis is aligned parallel to the water surface (as also found on neat Ag). Initially, the interaction with water surface species involves their dangling OD groups. During the completion of the first adlayer the ACN-ACN lateral interaction becomes of importance as well, and the ACN molecules become tilted with respect to the water surface. ACN shows propensity to stay at the surface after surface adsorption even during annealing up to the onset of desorption. The present results for the ACN-water interaction are compared with available classical molecular dynamics calculations providing the orientation profile for ACN on water as well as the ACN bonding properties.

Bahr, S.; Kempter, V. [Institut fuer Physik und Physikalische Technologien, Technische Universitaet Clausthal, Leibnizstr. 4, D-38678 Clausthal-Zellerfeld (Germany)

2009-06-07T23:59:59.000Z

462

Method of junction formation for CIGS photovoltaic devices  

DOE Patents [OSTI]

Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

Delahoy, Alan E. (Rocky Hill, NJ)

2010-01-26T23:59:59.000Z

463

Method of junction formation for CIGS photovoltaic devices  

DOE Patents [OSTI]

Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

Delahoy, Alan E.

2006-03-28T23:59:59.000Z

464

1 000 000 "C/s thin film electrical heater: ln situ resistivity measurements of Al and Ti/Si thin films during ultra rapid thermal annealing  

E-Print Network [OSTI]

introduce a new technique for rapidly heating (10' "C/s) thin films using an electrical thermal annealing- ently, most commercial RTA systems use radiation-heating techniques via tungsten-halogen lamps. These systems typi- cally have a maximum heating rate of 100-300 "C/s. We introduce an alternative methodfor

Allen, Leslie H.

465

Dopant Ion Size and Electronic Structure Effects on Transparent Conducting Oxides. Sc-Doped CdO Thin Films  

E-Print Network [OSTI]

-doped CdO (CSO) thin films have been grown on both amorphous glass and single-crystal MgO(100) substrates metallic conductivities, and relatively simple crystal structures.2,4-7 Sn doping of CdO thin films grown with the highest carrier mobilities grown to date.7 In addition, Cd2SnO4, CdIn2O4, and CdO-ZnO thin films have been

Medvedeva, Julia E.

466

Dielectric relaxation of thin films of polyamide random copolymers  

E-Print Network [OSTI]

We investigate the relaxation behavior of thin films of a polyamide random copolymer, PA66/6I, with various film thicknesses using dielectric relaxation spectroscopy. Two dielectric signals are observed at high temperatures, the $\\alpha$-process and the relaxation process due to electrode polarization (the EP-process), in addition to the conductivity component. The relaxation time of the EP-process has a Vogel-Fulcher-Tammann type of temperature dependence, and the glass transition temperature, $T_{\\rm g}$, evaluated from the EP-process agrees very well with the $T_{\\rm g}$ determined from the thermal measurements. The fragility index derived from the EP-process increases with decreasing film thickness. The relaxation time and the dielectric relaxation strength of the EP-process are described by a linear function of the film thickness $d$ for large values of $d$, which can be regarded as experimental evidence for the validity of attributing the observed signal to the EP-process. Furthermore, there is distinct deviation from this linear law for thicknesses smaller than a critical value. This deviation observed in thinner films is associated with an increase in the mobility and/or diffusion constant of the charge carriers responsible for the EP-process. The $\\alpha$-process is located in a high frequency region than the EP-process at high temperatures, but merges with the EP-process at lower temperatures near the glass transition region. The thickness dependence of the relaxation time of the $\\alpha$-process is different from that of the EP-process. This suggests that there is decoupling between the segmental motion of the polymers and the translational motion of the charge carriers in confinement.

Natsumi Taniguchi; Koji Fukao; Paul Sotta; Didier R. Long

2015-02-13T23:59:59.000Z

467

Low Cost Thin Film Building-Integrated Photovoltaic Systems  

SciTech Connect (OSTI)

The goal of the program is to develop 'LOW COST THIN FILM BUILDING-INTEGRATED PV SYSTEMS'. Major focus was on developing low cost solution for the commercial BIPV and rooftop PV market and meet DOE LCOE goal for the commercial market segment of 9-12 cents/kWh for 2010 and 6-8 cents/kWh for 2015. We achieved the 2010 goal and were on track to achieve the 2015 goal. The program consists of five major tasks: (1) modules; (2) inverters and BOS; (3) systems engineering and integration; (4) deployment; and (5) project management and TPP collaborative activities. We successfully crossed all stage gates and surpassed all milestones. We proudly achieved world record stable efficiencies in small area cells (12.56% for 1cm2) and large area encapsulated modules (11.3% for 800 cm2) using a triple-junction amorphous silicon/nanocrystalline silicon/nanocrystalline silicon structure, confirmed by the National Renewable Energy Laboratory. We collaborated with two inverter companies, Solectria and PV Powered, and significantly reduced inverter cost. We collaborated with three universities (Syracuse University, University of Oregon, and Colorado School of Mines) and National Renewable Energy Laboratory, and improved understanding on nanocrystalline material properties and light trapping techniques. We jointly published 50 technical papers in peer-reviewed journals and International Conference Proceedings. We installed two 75kW roof-top systems, one in Florida and another in New Jersey demonstrating innovative designs. The systems performed satisfactorily meeting/exceeding estimated kWh/kW performance. The 50/50 cost shared program was a great success and received excellent comments from DOE Manager and Technical Monitor in the Final Review.

Dr. Subhendu Guha; Dr. Jeff Yang

2012-05-25T23:59:59.000Z

468

The origin of white luminescence from silicon oxycarbide thin films  

SciTech Connect (OSTI)

Silicon oxycarbide (SiC{sub x}O{sub y}) is a promising material for achieving strong room-temperature white luminescence. The present work investigated the mechanisms for light emission in the visible/ultraviolet range (1.5–4.0?eV) from chemical vapor deposited amorphous SiC{sub x}O{sub y} thin films, using a combination of optical characterizations and electron paramagnetic resonance (EPR) measurements. Photoluminescence (PL) and EPR studies of samples, with and without post-deposition passivation in an oxygen and forming gas (H{sub 2} 5 at.?% and N{sub 2} 95 at.?%) ambient, ruled out typical structural defects in oxides, e.g., Si-related neutral oxygen vacancies or non-bridging oxygen hole centers, as the dominant mechanism for white luminescence from SiC{sub x}O{sub y}. The observed intense white luminescence (red, green, and blue emission) is believed to arise from the generation of photo-carriers by optical absorption through C-Si-O related electronic transitions, and the recombination of such carriers between bands and/or at band tail states. This assertion is based on the realization that the PL intensity dramatically increased at an excitation energy coinciding with the E{sub 04} band gaps of the material, as well as by the observed correlation between the Si-O-C bond density and the PL intensity. An additional mechanism for the existence of a blue component of the white emission is also discussed.

Nikas, V.; Gallis, S., E-mail: sgalis@us.ibm.com; Huang, M.; Kaloyeros, A. E. [College of Nanoscale Sciences and Engineering, State University of New York, Albany, New York 12203 (United States); Nguyen, A. P. D.; Stesmans, A.; Afanas'ev, V. V. [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium)

2014-02-10T23:59:59.000Z

469

Thin Film Si Bottom Cells for Tandem Device Structures: Final Technical Report, 15 December 2003 - 15 October 2007  

SciTech Connect (OSTI)

GIT and IEC developed thin-film Si bottom cell and showed that deposition of top cell in tandem device did not reduce bottom cell performance.

Yelundur, V.; Hegedus, S.; Rohatgi, A.; Birkmire, R.

2008-11-01T23:59:59.000Z

470

Building Integrated Photovoltaics: New trends and Challenges'  

E-Print Network [OSTI]

AR coating p-type Si Monocrystalline Silicon solar cell Polycrystalline wafer solar cells #12;· Thin crystalline silicon (mono & multi) Dye cell and organic thin film: a-Si, CdTe, CIGS new concepts the optical absorption in thin a-Si layers, texturing of TCO and reflecting mirror are applied Amorphous

Painter, Kevin

471

Hierarchical Assemblies of Block-Copolymer-Based Supramolecules in Thin Films  

SciTech Connect (OSTI)

The hierarchical assemblies of supramolecules, which consisted of polystyrene-b-poly(4-vinylpyridine) (PS-b-P4VP) with 3-pentadecylphenol (PDP) hydrogen-bonded to the 4VP, were investigated in thin films after solvent annealing in a chloroform atmosphere. The synergistic coassembly of PS-b-P4VP and PDP was utilized to generate oriented hierarchical structures in thin films. Hierarchical assemblies, including lamellae-within-lamellae and cylinders-within-lamellae, were simultaneously ordered and oriented from a few to several tens of nanometers over macroscopic length scales. The macroscopic orientation of supramolecular assembly depends on the P4VP(PDP) fraction and can be tailored by varying the PDP to P4VP ratio without interfering with the supramolecular morphologies. The lamellar and cylindrical microdomains, with a periodicity of {approx}40 nm, could be oriented normal to the surface, while the assembly of comb blocks, P4VP(PDP), with a periodicity of {approx}4 nm, were oriented parallel to the surface. Furthermore, using one PS-b-P4VP copolymer, thin films with different hierarchical structures, i.e., lamellae-within-lamellae and cylinders-within-lamellae, were obtained by varying the ratio of PDP to 4VP units. The concepts described in these studies can be potentially applied to other BCP-based supramolecular thin films, thus creating an avenue to functional, hierarchically ordered thin films.

Tung, Shih-Huang; Kalarickal, Nisha C.; Mays, Jimmy W.; Xu, Ting (UCB); (ORNL)

2009-09-08T23:59:59.000Z

472

The reversal of the laser-beam-induced-current contrast with varying illumination density in a Cu{sub 2}ZnSnSe{sub 4} thin-film solar cell  

SciTech Connect (OSTI)

We apply an array of correlated spatially-resolved techniques, including ?-Raman/photoluminescence/reflectance/laser-beam-induced-current in conjunction with scanning electron microscopy and atomic force microscopy, to study the impact of the microscopic-scale thickness inhomogeneity of CdS layer in a Cu{sub 2}ZnSnSe{sub 4} thin-film solar cell. Thicker CdS regions are found to cause more light reflecting loss thus yield lower external quantum efficiencies and energy conversion efficiencies than the general area. However, these regions show much less efficiency degradation at high illumination intensity, leading to an inversion of laser-beam-induced-current contrast in the area mapping. While improving the CdS layer uniformity can boost the device performance, the finding further points out the possibility of operating thin-film photovoltaic devices based on the similar materials (such as CuInGaSe{sub 2}, CdTe, Cu{sub 2}ZnSn(S,Se){sub 4}) under a substantially higher illumination density for concentrated photovoltaic and photo-detection.

Chen, Qiong; Zhang, Yong, E-mail: yong.zhang@uncc.edu [Department of Electrical and Computer Engineering, and Energy Production and Infrastructure Center (EPIC), The University of North Carolina at Charlotte, Charlotte, North Carolina 28223 (United States)] [Department of Electrical and Computer Engineering, and Energy Production and Infrastructure Center (EPIC), The University of North Carolina at Charlotte, Charlotte, North Carolina 28223 (United States)

2013-12-09T23:59:59.000Z

473

Manufacturing-Friendly Advance Seen in CIGS Solar Cell Processing (Fact Sheet)  

SciTech Connect (OSTI)

Scientists developed a robust, high-performance amorphous InZnO transparent contact for CIGS solar cells.

Not Available

2011-05-01T23:59:59.000Z

474

The catalytic reactivity of thin film crystal surfaces: Annual technical progress report  

SciTech Connect (OSTI)

Research is being conducted on Cu/Pd and Pd/Cu thin films. Work has been completed on the following: Work Function Studies on Epitaxial Cu/Pd Bilayer Films; Kinetics of CO and Oxygen Adsorption on Smooth and Sputtered Epitaxial Pd(lll) Films on Mica; A Simple Model for the Auger Electron Spectroscopy Evaluation of Thin Film Layer Growth Systems in Which Substrate-Overgrowth Mixing Occurs. Work in progress includes: AES of the Growth of Pd on (lll)Cu and Cu on (lll)Pd; Catalysis of the CO Oxidation Reaction on Epitaxial Cu/Pd Bilayer Films; Thermal Desorption Spectroscopy of CO from Various Thin Film Cu/Pd Bilayers; LEED Measurements; Kinetics of Adsorption of CO on Various Cu/Pd Bilayers. 7 figs.

Vook, R.W.

1988-02-15T23:59:59.000Z

475

Enhanced Efficiency of Light-Trapping Nanoantenna Arrays for Thin Film Solar Cells  

E-Print Network [OSTI]

We suggest a novel concept of efficient light-trapping structures for thin-film solar cells based on arrays of planar nanoantennas operating far from plasmonic resonances. The operation principle of our structures relies on the excitation of chessboard-like collective modes of the nanoantenna arrays with the field localized between the neighboring metal elements. We demonstrated theoretically substantial enhancement of solar-cell short-circuit current by the designed light-trapping structure in the whole spectrum range of the solar-cell operation compared to conventional structures employing anti-reflecting coating. Our approach provides a general background for a design of different types of efficient broadband light-trapping structures for thin-film solar-cell technologically compatible with large-area thin-film fabrication techniques.

Simovski, Constantin R; Voroshilov, Pavel M; Guzhva, Michael E; Belov, Pavel A; Kivshar, Yuri S

2013-01-01T23:59:59.000Z

476

Aluminum recycling from reactor walls: A source of contamination in a-Si:H thin films  

SciTech Connect (OSTI)

In this article, the authors investigate the contamination of hydrogenated amorphous silicon thin films with aluminum recycled from the walls and electrodes of the deposition reactor. Thin films of hydrogenated amorphous silicon were prepared under various conditions by a standard radio frequency plasma enhanced chemical vapor deposition process in two reactors, the chambers of which were constructed of either aluminum or stainless steel. The authors have studied the electronic properties of these thin films and have found that when using an aluminum reactor chamber, the layers are contaminated with aluminum recycled from the chamber walls and electrode. This phenomenon is observed almost independently of the deposition conditions. The authors show that this contamination results in slightly p-doped films and could be detrimental to the deposition of device grade films. The authors also propose a simple way to control and eventually suppress this contamination.

Longeaud, C.; Ray, P. P.; Bhaduri, A.; Daineka, D.; Johnson, E. V.; Roca i Cabarrocas, P. [Laboratoire de Genie Electrique de Paris (UMR 8507 CNRS), Supelec, Universites Paris VI and XI, 11 Rue Joliot-Curie, Plateau de Moulon, 91190 Gif sur Yvette (France); Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex (France)

2010-11-15T23:59:59.000Z

477

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents [OSTI]

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells.

Lauf, Robert J. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

478

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents [OSTI]

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells.

Lauf, Robert J. (Oak Ridge, TN)

1996-01-01T23:59:59.000Z

479

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents [OSTI]

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells. 4 figures.

Lauf, R.J.

1994-04-26T23:59:59.000Z

480

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents [OSTI]

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells. 4 figs.

Lauf, R.J.

1996-04-02T23:59:59.000Z

Note: This page contains sample records for the topic "thin-films cigs cdte" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Titanium and Magnesium Co-Alloyed Hematite Thin Films for Photoelectrochemical Water Splitting  

SciTech Connect (OSTI)

Using a combination of density functional theory calculation and materials synthesis and characterization we examine the properties of charge-compensated Ti and Mg co-alloyed hematite thin films for the application of photoelectrochemical (PEC) water splitting. We find that the charge-compensated co-alloying results in the following effects: (1) It enhances the solubility of Mg and Ti, which leads to reduced electron effective mass and therefore increased electron mobility; (2) It tunes the carrier density and therefore allows the optimization of electrical conductivity; and (3) It reduces the density of charged defects and therefore reduces carrier recombination. As a result, the Ti and Mg co-alloyed hematite thin films exhibit improved water oxidation photocurrent magnitudes as compared to pure hematite thin films. Our results suggest that charge-compensated co-alloying is a plausible approach for engineering hematite for the application of PEC water splitting.

Tang, H.; Yin, W. J.; Matin, M. A.; Wang, H.; Deutsch, T.; Al-Jassim, M. M.; Turner, J. A.; Yan, Y.

2012-04-01T23:59:59.000Z

482

Niobium thin film deposition studies on copper surfaces for superconducting radio frequency cavity applications  

SciTech Connect (OSTI)

Thin film coatings have the potential to increase both the thermal efficiency and accelerating gradient in superconducting radio frequency accelerator cavities. However, before this potential can be realized, systematic studies on structure-property correlations in these thin films need to be carried out since the reduced geometry, combined with specific growth parameters, can modify the physical properties of the materials when compared to their bulk form. Here, we present our systematic studies of Nb thin films deposited onto Cu surfaces to clarify possible reasons for the limited success that this process exhibited in previous attempts. We compare these films with Nb grown on other surfaces. In particular, we study the crystal structure and surface morphology and their effect on superconducting properties, such as critical temperature and lower critical field. We found that higher deposition temperature leads to a sharper critical temperature transition, but also to increased roughness indicating that there are competing mechanisms that must be considered for further optimization.

W. M. Roach, D. B. Beringer, J. R. Skuza, W. A. Oliver, C. Clavero, C. E. Reece, R. A. Lukaszew

2012-06-01T23:59:59.000Z

483

Solar-energy conversion by combined photovoltaic converters with CdTe and CuInSe{sub 2} base layers  

SciTech Connect (OSTI)

The possibility of the combined use of bifacial thin-film solar cells based on CdTe and frontal solar cells with a CuInSe{sub 2} base layer in tandem structures is experimentally confirmed. It is found that, for the use of bifacial solar cells based on cadmium telluride in a tandem structure, the optimal thickness of their base layer should be 1 ?m. The gain in the efficiency of the tandem structure, compared with an individual CuInSe{sub 2}-based solar cell, is 1.8% in the case of series-connected solar cells and 1.3%, for parallel-connected.

Khrypunov, G. S., E-mail: khrip@ukr.net; Sokol, E. I. [National Technical University “Kharkiv Polytechnic Institute” (Ukraine); Yakimenko, Yu. I. [National Technical University “Kyiv Polytechnic Institute”, Research Institute of Applied Electronics (Ukraine); Meriuts, A. V. [National Technical University “Kharkiv Polytechnic Institute” (Ukraine); Ivashuk, A. V. [National Technical University “Kyiv Polytechnic Institute”, Research Institute of Applied Electronics (Ukraine); Shelest, T. N. [National Technical University “Kharkiv Polytechnic Institute” (Ukraine)

2014-12-15T23:59:59.000Z

484

Effect of deposition pressure on the structural and magnetic properties of cobalt ferrite thin films  

SciTech Connect (OSTI)

We present the influence of deposition pressure on the structural and magnetic properties of cobalt ferrite thin films. Thin films of Co ferrite were deposited by rf sputtering on Si (100) substrate and characterized by X - Ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Vibrating Sample Magnetometer (VSM). The XRD patterns showed the formation of crystalline single phase of the films. The particle size and surface roughness of the films were strongly influence by gas pressure. Hysteresis loops measured at room temperature showed the enhancement of magnetic properties with the increase of gas pressure which is attributed to the decrease of particle size.

Nongjai, R.; Khan, S.; Ahmad, H.; Khan, I. [Department of Applied Physics, Zakir Hussain College of Engineering and Technology, A.M.U., Aligarh (India); Asokan, K. [Material Science Division, Inter University Accelerator Centre, New Delhi (India)

2013-06-03T23:59:59.000Z

485

Process for forming epitaxial perovskite thin film layers using halide precursors  

DOE Patents [OSTI]

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Clem, Paul G. (Albuquerque, NM); Rodriguez, Mark A. (Albuquerque, NM); Voigt, James A. (Corrales, NM); Ashley, Carol S. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

486

Crystal coherence length effects on the infrared optical response of MgO thin films.  

SciTech Connect (OSTI)

The role of crystal coherence length on the infrared optical response of MgO thin films was investigated with regard to Reststrahlen band photon-phonon coupling. Preferentially (001)-oriented sputtered and evaporated ion-beam assisted deposited thin films were prepared on silicon and annealed to vary film microstructure. Film crystalline coherence was characterized by x-ray diffraction line broadening and transmission electron microscopy. The infrared dielectric response revealed a strong dependence of dielectric resonance magnitude on crystalline coherence. Shifts to lower transverse optical phonon frequencies were observed with increased crystalline coherence. Increased optical phonon damping is attributed to increasing granularity and intergrain misorientation.

Boreman, Glenn D. (University of Central Florida, Orlando, FL); Kotula, Paul Gabriel; Rodriguez, Mark Andrew; Shelton, David J. (University of Central Florida, Orlando, FL); Carroll, James F., III; Sinclair, Michael B.; Ihlefeld, Jon F.; Ginn, James Cleveland, III; Clem, Paul Gilbert; Matias, Vladimir (Los Alamos National Laboratory, Los Alamos, NM)

2010-07-01T23:59:59.000Z

487

Method of preparing high-temperature-stable thin-film resistors  

DOE Patents [OSTI]

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Raymond, L.S.

1980-11-12T23:59:59.000Z

488

Investigations of CuInSe sub 2 thin films and contacts  

SciTech Connect (OSTI)

This report describes research into electrical contacts for copper indium diselenide (CuInSe{sub 2}) polycrystalline thin films used for solar cell applications. Molybdenum contacts have historically been the most promising for heterojunction solar cells. This program studied contact stability by investigating thermally induced bilayer reactions between molybdenum and copper, indium, and selenium. Because selenization is widely used to fabricate CuInSe{sub 2} thin films for photovoltaic cells, a second part of the program investigated how the morphologies, phases, and reactions of pre-selenization Cu-In structures are affected by the deposition process and heat treatments. 7 refs., 6 figs.

Nicolet, M.A. (California Inst. of Tech., Pasadena, CA (United States))

1991-10-01T23:59:59.000Z

489

Thickness dependent exchange bias in martensitic epitaxial Ni-Mn-Sn thin films  

SciTech Connect (OSTI)

A thickness dependent exchange bias in the low temperature martensitic state of epitaxial Ni-Mn-Sn thin films is found. The effect can be retained down to very small thicknesses. For a Ni{sub 50}Mn{sub 32}Sn{sub 18} thin film, which does not undergo a martensitic transformation, no exchange bias is observed. Our results suggest that a significant interplay between ferromagnetic and antiferromagnetic regions, which is the origin for exchange bias, is only present in the martensite. The finding is supported by ab initio calculations showing that the antiferromagnetic order is stabilized in the phase.

Behler, Anna [IFW Dresden, Institute for Complex Materials, P.O. Box 27 01 16, 01171 Dresden (Germany) [IFW Dresden, Institute for Complex Materials, P.O. Box 27 01 16, 01171 Dresden (Germany); Department of Physics, Institute for Solid State Physics, Dresden University of Technology, 01062 Dresden (Germany); Teichert, Niclas; Auge, Alexander; Hütten, Andreas [Department of Physics, Thin Films and Physics of Nanostructures, Bielefeld University, 33501 Bielefeld (Germany)] [Department of Physics, Thin Films and Physics of Nanostructures, Bielefeld University, 33501 Bielefeld (Germany); Dutta, Biswanath; Hickel, Tilmann [Max-Planck Institut für Eisenforschung, 40237 Düsseldorf (Germany)] [Max-Planck Institut für Eisenforschung, 40237 Düsseldorf (Germany); Waske, Anja [IFW Dresden, Institute for Complex Materials, P.O. Box 27 01 16, 01171 Dresden (Germany)] [IFW Dresden, Institute for Complex Materials, P.O. Box 27 01 16, 01171 Dresden (Germany); Eckert, Jürgen [IFW Dresden, Institute for Complex Materials, P.O. Box 27 01 16, 01171 Dresden (Germany) [IFW Dresden, Institute for Complex Materials, P.O. Box 27 01 16, 01171 Dresden (Germany); Institute of Materials Science, Dresden University of Technology, 01062 Dresden (Germany)

2013-12-15T23:59:59.000Z

490

Nanoparticle size and morphology control using ultrafast laser induced forward transfer of Ni thin films  

SciTech Connect (OSTI)

We have developed a nanoparticle (NP) printing technique using Ni thin film lift-off from glass substrates after ultrafast irradiation in air. Unique interactions of ultrafast laser pulses with thin films allow for control over NP faceting and size distributions. Control is achieved by changing the laser fluence, film thickness, and film-substrate distance. We demonstrate 20 nm Ni film removal from substrates and rapid NP printing, with size distributions centered at a 6 nm diameter. When the Ni film thickness is lowered to 10 nm, NPs are printed with distributions peaked at a 2 nm diameter.

Murphy, Ryan D. [Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109 (United States)] [Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109 (United States); Abere, Michael J.; Schrider, Keegan J.; Yalisove, Steven M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Torralva, Ben [Department of Atmospheric, Oceanic and Space Sciences, University of Michigan, Ann Arbor, Michigan 48109 (United States)] [Department of Atmospheric, Oceanic and Space Sciences, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2013-08-26T23:59:59.000Z

491

Method of preparing high-temperature-stable thin-film resistors  

DOE Patents [OSTI]

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Raymond, Leonard S. (Tucson, AZ)

1983-01-01T23:59:59.000Z

492

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION ELECTRON MICROSCOPY  

E-Print Network [OSTI]

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION, A. N. Tiwari Thin Film Physics Group, Laboratory for Solid State Physics, Technopark ETH-Building, Technoparkstr. 1, CH-8005 Zurich, Switzerland ABSTRACT: CdTe/CdS thin £lm solar cells have been grown by closed

Romeo, Alessandro

493

Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells  

E-Print Network [OSTI]

Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells. de Bariloche, Argentina 3 ECN Solar Energy, High Tech Campus, Building 5, 5656 AE Eindhoven energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar

Dunin-Borkowski, Rafal E.

494

Anode-supported thin-film fuel cells operated in a single chamber configuration 2T-I-12  

E-Print Network [OSTI]

on the anode, producing a complex response in fuel cell power output. Under optimized gas compositions and flowAnode-supported thin-film fuel cells operated in a single chamber configuration 2T-I-12 Zongping of anode-supported, thin-film, single chamber fuel cells (SCFCs) have been investigated. Cells, in which Ni

Haile, Sossina M.

495

Continuous Crystalline Carbonate Apatite Thin Films. A Biomimetic Guofeng Xu,, Ilhan A. Aksay,, and John T. Groves*,,  

E-Print Network [OSTI]

of hydroxyapatite thin films for the obvious reason that they are good candidates as bioactive coatings for bone is regarded as a better model for bone minerals1 and, therefore, carbonated apatite thin film coatings be attributed to the under-development of proper synthetic methods that are geared to carbonated apatite

Aksay, Ilhan A.

496

Dielectric and ferroelectric properties of c-axis oriented strontium bismuth tantalate thin films applied transverse electric fields  

E-Print Network [OSTI]

Dielectric and ferroelectric properties of c-axis oriented strontium bismuth tantalate thin films and ferroelectric properties of c-axis oriented epitaxial strontium bismuth tantalate SBT thin films were American Institute of Physics. DOI: 10.1063/1.2205351 I. INTRODUCTION Strontium bismuth tantalate SBT has

Tonouchi, Masayoshi

497

Rapid Deposition Technology Holds the Key for the World's Largest Manufacturer of Thin-Film Solar Modules (Fact Sheet)  

SciTech Connect (OSTI)

First Solar, Inc. has been collaborating with NREL since 1991, advancing its thin-film cadmium telluride solar technology to grow from a startup company to become one of the world's largest manufacturers of solar modules, and the world's largest manufacturer of thin-film solar modules.

Not Available

2013-08-01T23:59:59.000Z

498

Pulsed laser deposited amorphous chalcogenide and alumino-silicate thin films and their multilayered structures for photonic applications  

E-Print Network [OSTI]

1 Pulsed laser deposited amorphous chalcogenide and alumino-silicate thin films, 35042 Rennes Cedex, France Abstract Amorphous chalcogenide and alumino-silicate thin films were (As40Se60/Ge25Sb5S70) and mixed chalcogenide-oxide layers (As40Se60/alumino-silicate and Ga10Ge15Te75

Boyer, Edmond

499

Thin Film Materials and Processing Techniques for a Next Generation Photovoltaic Device: Cooperative Research and Development Final Report, CRADA Number CRD-12-470  

SciTech Connect (OSTI)

This research extends thin film materials and processes relevant to the development and production of a next generation photovoltaic device.

van Hest, M.

2013-08-01T23:59:59.000Z

500

Guided optical modes in randomly textured ZnO thin films imaged by near-field scanning optical K. Bittkau* and R. Carius  

E-Print Network [OSTI]

relevance. In particular, when designing thin-film solar cells and light emitting diodes LEDs , ran- domly

Peinke, Joachim